A connector for connecting a card edge module to a circuit board includes a housing that extends along a longitudinal axis between opposite first and second end portions. The housing including a card slot configured to receive a mating edge of the card edge module and a channel proximate one of the first and second end portions. A protective member is received in the channel and positioned to inhibit contact between a side edge of the card edge module and the one of the first and second end portions of the housing when the card edge module is loaded into the connector.

The invention relates generally to card edge connectors and, more particularly to a card edge connector with protective members to minimize wear in the connector.
Computers and servers may use numerous types of electronic modules, such as processors, memory, and other types of resource, all of which may be produced in a number of formats. For instance, memory modules may be Single In-line Memory Modules (SIMM's), or the newer Dual In-line Memory Modules (DIMM's) and Fully Buffered DIMM's (FB DIMM's). Networking and telecommunications systems may include modules adhering to various standards such as Advanced Telecommunications Computing Architecture (Advanced TCA) and Micro Telecommunications Computing Architecture (Micro TCA).
Typically, the electronic modules are installed in multi-pin socket connectors mounted on a system board or motherboard. Each module has a card edge that provides an interface generally between two rows of contacts in a card slot of the socket. Conventionally the card edge interface is a separable card edge interface. Some of the cards can be relatively large and when inserted into or extracted from the socket, it is not uncommon that the side edges of the card rub against the socket housing at the ends of the card slot.
The electronic module cards typically include a fiberglass based substrate that is left with relatively rough edges after the manufacturing process. The substrate material is harder than the plastic material of the socket housing such that the side edges of the card may abrade or wear the socket housing at the end of the card slot during insertion and removal. Excessive wear in the socket may cause unreliable mating of the module card with the socket. Thus, a need exists for a socket connector wherein the socket connector is protected from wear or abrasion at the ends of the card slot from contact with the module cards.

Electrical connector with protective member


The present disclosure is directed to an accessory for a toy figure having at least one receptacle and to a play kit. The accessory includes a housing configured to be selectively attached to the at least one receptacle of the toy figure. In some embodiments, the accessory includes an audio input mechanism; an audio processing mechanism; and an audio output mechanism. In some embodiments, the accessory includes a motion detector mechanism and an audio output mechanism. In some embodiments, the accessory includes an optical assembly. In some embodiments, the play kit includes a toy figure having at least one receptacle; a key; a first accessory; and a second accessory.

The present disclosure is directed to accessories for toy figures, including battery-powered accessories for toy figures, and play kits including toy figures and accessories for toy figures.
Examples of accessories, including accessories for toy figures are found in U.S. Pat. Nos. 6,824,442; 6,071,166; 5,730,638; 5,364,107; 5,147,237; 5,092,810; 5,073,140; 4,902,262; 4,874,343; 4,723,931; 4,637,007; 4,626,222; 4,185,412; 4,060,929; 3,925,924; 3,911,613; 3,808,736; 3,911,613; 3,614,110; 3,127,176; 2,211,105; and D437,012; U.S. Patent Application Publication Nos. US 2005/0096111 and US 2004/0212148; European Patent Application No. 0482887; PCT Application Publication No. WO 98/50126; and United Kingdom Patent Application Nos. 2,180,768 and 1,549,964, the entire disclosures of the above patents and patent applications are herein incorporated by reference for all purposes.


An optical device includes an encoding surface having a micro-relief pattern (22) over at least part thereof designed to produce a predetermined diffracted first image when illuminated in use, and an optically anisotropic layer (26) such as a polymerized liquid crystal provided whereby at least part of the micro-relief pattern (22) induces local orientation of the optically anisotropic layer (26) thereby to impose a predetermined polarization modulation, thereby to produce a predetermined polarization dependent second image when illuminated in use.

It has been shown that surface relief structures of diffractive elements (or indeed various different surface relief patterns or functions) can be formed into suitable receptive material by any one of many known methods.
FIG. 1 of the drawings shows the basic structure of an embossed holographic or diffractive security device, referred to above as a type 'A' device. As shown, the device comprises a substrate layer 10 of a UV curable resin or an embossable thermoplastic. The substrate carries a micro-relief grating pattern 12 and a very thin layer of metal or multi-layer reflective coating 14 (eg vacuum deposited). An upper layer 16 of UV curable resin or other isotropic material with a refractive index n of typically around 1.45 to 1.6 is coated onto the substrate. In such an arrangement, with an embossed surface with pitch p, the direction of the diffracted orders is determined by:—Sin(θm)=Sin(θo)+m·λ/p  (Equation (1))
Where λ is the wavelength of the diffracted light, p is the grating pitch (period) and m is the diffraction order. θm and θo correspond to the angles between the normal to the reflection surface and the directions of orders m and o. when m=0, (zero order), this corresponds to the mirror reflection (undiffracted light).
In practical devices used in security applications (holograms, diffractive gratings) typical parameters are:
D (structure depth) about 0.1 to 0.5 μm
p (structure pitch/period) about 0.4 to 2.0 μm
In FIG. (1) for the first order sin (α)=λ/p, where α is the angle between the light diffracted into the first order and the mirror reflection (zero order). For λ=0.5 μm (average of visible light), and p=1 μm, the above expression gives α=30°. It should be noted that for the special case of vertical illumination the values θo=0, θm=α are obtained. The diffractive effects are mainly due to the local orientations and spacings of the gratings. However, the profile-depths of the grating, to a first order, determine the diffraction efficiency.
Referring to FIG. 2, in another type of reflective mode device, instead of providing a reflective layer 14 between the substrate 10 and the upper layer 16, the surface of the substrate layer 10 from the interface may be made reflective, as shown by reflective layer 18 in FIG. 2. Similarly the upper surface of layer 16 may be rendered reflective. To have sufficient diffractive efficiency the refractive indices of the substrate layer 10 and the layer 16 must differ in order to avoid index matching.
The devices can be made to work in transmission. Referring to FIG. 3, in transmissive mode, both the upper layer 16 and the substrate 10 are transparent. To have sufficient diffractive efficiency, the refractive indices of substrate 10 (n1) and layer 16 (n2) must differ in order to avoid index matching. Practical curable resins can give:Δn=n1−n2=0.2n1˜1.4n2˜1.6
Therefore the depth of the structures should in general be larger than in the reflective case to get sufficient difference in the optical path. The other parameters and structures are similar to the reflective case.
The operation of type B devices which use liquid crystalline materials to provide optical phase modulation/retardation are described in e.g. "Optical LPP/LCP Devices—A New Generation of Optical Security Elements" Proceedings of SPIE Vol 3793 (2000), pp 196-203 and "New Coloured Optical Security Elements Using LPP/LCP Technology" Proceedings of SPIE Vol. 4672 (2002). The operation of a transmissive and reflective device is also explained in these references.

Diffractive, polarization modulating optical devices


An embedded multimedia card (eMMC) comprises a clock channel configured to receive a clock signal from a host, a command channel configured to receive a command from the host, a plurality of data channels configured to transmit data to the host, a data strobe channel configured to transmit a data strobe signal synchronized with the data to the host, and a data strobe control unit configured to selectively enable or generate the data strobe signal according to a protocol control signal.

Embodiments of the inventive concept relate generally to embedded multimedia cards (eMMC), and eMMC systems comprising a host and an eMMC. More particularly, certain embodiments of the inventive concept relate to eMMCs using a unidirectional data strobe signal.
The so-called multimedia card (MMC) is a flash memory card standard. The eMMC is an embedded MMC standard defined by the Joint Electronic Devices Engineering Council (JEDEC). In general configuration and application, eMMCs are designed to be inserted (or "embedded") in conjunction with a host within mobile communication devices such as smart phones. Conventionally, the eMMC communicates data signals, control signals, commands, clock(s) and/or power signals with the connected host in accordance with a standardize ten (10) signal line bus. Those skilled in the art will understand that various JEDEC standards are available that characterize and/or define the structure, constitution and/or operating parameters of certain eMMCs. These standards may be readily obtained and consulted by recourse to http://www.jedec.org. For example, the eMMC electrical standard, version 4.51 published June 2012 (i.e., JESD84-B451) contains many terms and technical definitions that are useful to an understanding of the inventive concept described hereafter.
In general, there is a need to improve the performance (e.g., speed and reliability) of data transfer and other operations in systems comprising a host and an eMMC.

Embedded multimedia card using unidirectional data strobe signal, host for controlling the same, and related methods of operation


An ultrasonic sensor is disclosed. The ultrasonic sensor includes a plurality of sensor elements arranged in an array. Each sensor element includes an ultrasonic sensing element and an acoustic matching member. The ultrasonic sensor further includes a bonding member having a thickness approximately equal to a space interval between adjacent ultrasonic sensing elements. The bonding member adhesively fixes the plurality of sensor elements, and includes a portion contacting each ultrasonic sensing element. An elastic modulus of the portion is smaller than that of each ultrasonic sensing element.

1. Field of the Invention
The present invention relates to an ultrasonic sensor including multiple sensor elements arranged in an array.
2. Description of Related Art
An ultrasonic sensor that has multiple sensor elements arranged in an array has been known. Such an ultrasonic sensor is used for measuring a location of an obstacle existing forward of the ultrasonic sensor, and used for sensing a shape of the obstacle. Also, an ultrasonic transducer for obtaining an ultrasound image has been known in, for example, a medical field. When this type of an ultrasonic sensor measures a location and a shape of an obstacle, it is typically required to obtain a time interval between transmission and reception of the ultrasonic wave. Further, it is required to obtain a difference in time or phase between the ultrasonic wave received by one sensor element and that received by another sensor element.
In the ultrasonic sensor, the positioning accuracy of the sensor elements influences accuracy for detecting the difference in the time or phase of the ultrasonic wave. It is therefore important to improve the positioning accuracy of the sensor elements. Japanese Patent Application Publication 2003-235098 corresponding to U.S. Pat. No. 7,309,948 discloses an ultrasonic sensor, in which a fixation member made of hard resin plays a role in positioning a transducer.
In the ultrasonic sensor disclosed in Japanese Patent Application Publication 2003-235098, since the fixation member is made of hard material, the fixation member restrains vibrations of the transducer, and as a result, sensitivity for detection of the ultrasonic wave is lowered. Regarding an ultrasonic sensor for monitoring a space around a vehicle, the ultrasonic sensor typically employs an ultrasonic wave with low frequencies. In this case, the ultrasonic wave has a large amplitude, and a hard fixation member causes an ultrasonic wave to be damped remarkably. Further, the hard fixation member can conduct vibrations from one transducer to another transducer, resulting in a worse cross-talk characteristic.


The status command and communication device has a single user actuatable control input which is configured as a switch. The switch has a first and a second output state and the system monitors the switch and generates a first, second, and third status commands based upon the detection of first, second and third predetermined sequential switch output states. Based upon the status commands, the command and communication device generates a position signal based upon GPS position locating signals. The device further transmits the position signal and the status commands to a central station which, in turn, generates responsive communications to the device. Other passive input devices are included in the command and communication device (e.g., microphone) as well as an on/off switch. The device also includes, in a preferred embodiment, audio outputs and visual outputs for the user. The method includes monitoring switch output states, generating status commands based upon a plurality of detected, predetermined, timed and sequential switch output states, capturing the GPS position locating signals and transmitting a position signal and the status commands from the device dependent upon the status commands.

U.S. Pat. No. 5,504,491 to Chapman discloses a global status and position reporting system. In the Chapman '491 system, a remote unit has a plurality of sensors, configured in one embodiment as five switches, which establish status commands for the remote unit. These status commands are combined with global position satellite or GPS position signals received by the unit. The status commands or signals are transmitted with the GPS position signal to a central location. At a central control station, an operator or a specially configured computer system reacts to the status commands and the GPS locating signal and responds either directly to the remote unit or to the appropriate, predetermined companies or initiates an appropriate activity. For example, the central control unit may contact emergency medical systems, the police, the fire department, or an anti-theft unit. Further, the central control station may contact a concierge operator or an emergency road service or an operator who can provide directions for the person at the remote unit to direct that person to an appropriate destination. The disclosure of U.S. Pat. No. 5,504,491 is incorporated herein by reference thereto.

Single button-multiple command position and status control system and method therefor


A system is provided including a first server storing a first data file for a first user, a second server storing a second data file for a second user, a first data card of the first user registered with the first server and locally storing a portion of the first data file, and a second data card of the second user registered with the second server and associated with the second data file. The first data card detects a pairing gesture between the first and second data cards, and in response, establishes a peer-to-peer connection between the data cards. The first data card subsequently detects a transfer gesture between the first and second data cards, and in response, transmits the portion of the first data file from the first data card to the second data card over the peer-to-peer connection.

A computing infrastructure generally includes several data servers connected to a network such as the internet. Generally, data can be exchanged between data files stored on the same data server or different data servers upon request from registered users. However, to execute the data transfer between data files, the data server(s) as well as a computing device being used by the user to request the data transfer must be connected to a network such as the internet. For example, to request a data transfer from a first data file stored on a first data server connected to the internet to a second data file stored on a second server also connected to the internet, the user may need to connect a computing device of the user to the internet and communicate with the first server and/or the second server over the internet to request the data transfer. The user cannot initiate data transfers between data files stored at one or more servers without access to a network such as the internet that enables the user to communicate with the one or more servers and initiate the data transfers.

Offline data transfer between devices using gestures


A frictional resistance between a spring seat and a retaining plate is suppressed to provide stable damper characteristics. A lockup damper mechanism 2 of a torque converter 1 is operable to transmit a torque from a front cover 3 to a turbine 5 and, at the same time, damp a vibration, and includes a piston 17, a driven plate 20, torsion springs 21, a retaining plate 19, spring seats 32 and balls 30. The torsion springs 21 elastically couples, in a rotating direction, the piston 17 and the driven plate 20 together. The retaining plate 19 restricts radially outward movement of the torsion springs 21. The spring seats 32 supports ends of the torsion springs 21. The balls 30 are contactable with the retaining plate 21, and are disposed between the retaining plate 21 and the spring seat 32.

A. Field of the Invention
The present invention relates to a damper mechanism, and in particular to a damper mechanism which transmits a torque from an input rotary member to an output rotary member and simultaneously dampens a vibration during torque transmission.
B. Description of the Background Art
In general, a damper mechanism transmits a torque from an input rotary member to an output rotary member and simultaneously dampens a vibration which may be transmitted from the input rotary member to the output rotary member. A lockup clutch damper mechanism (which will also be referred to as a "lockup dampery mechanism" hereinafter) disposed in a torque converter is one such damper mechanism.
Generally, the torque converter is internally provided with three types of vane wheels, an impeller, a turbine and a stator), and is operable to transmit a torque through a working fluid in the torque converter. The impeller is fixed to a front cover which coupled to the input rotary member for rotation therewith, and transmits torque to the turbine through the working fluid, which flows from the impeller to the turbine and then through the stator back to the impeller. The torque is then transmitted to the output rotary member which is coupled to the turbine.
The lockup damper mechanism is disposed between the turbine and the front cover for selectively mechanically coupling the front cover and the turbine together and thereby directly transmitting the torque from the front cover to the output rotary member.
Typically, the lockup damper mechanism has a piston which can be selectively pressed against the front cover, a retaining plate fixed to the piston, torsion springs supported by the retaining plate through spring seats, and a driven plate elastically coupled in the rotating direction of the damper mechanism to the piston by the torsion springs. The driven plate is fixed to the turbine. The spring seats support opposing ends of the torsion springs, are contactable with the retaining plate, and restrict the movement of the torsion springs in the rotating direction.
When the lockup damper mechanism operates, the torque is transmitted from the front cover to the piston, and then is transmitted through the torsion springs to the turbine. The lockup damper mechanism transmits the torque, and simultaneously dampens vibrations as a result of the torsion springs being compressed and then expanding between the driven plate and the retaining plate.
The torsion springs are restrained from radially outward movement by bent outer peripheral portions of the retaining plate, which will be referred to as outer bent portions hereinafter.
When the lockup damper mechanism rotates, centrifugal forces act on the torsion springs and other components, so that the torsion springs and spring seats are urged against the outer bent portions. When the torsion springs compress and expand with their spring seats urged against the outer bent portions, the damper characteristics change due to frictional resistance produced between the spring seats and the outer bent portions. As a result, it is necessary to employ the outer bent portions having a sufficiently large thickness because the friction caused by movement of the spring seats causes wear of the outer peripheral portions thereof. However, it is desired to reduce the thickness in order to reduce the weight of the lockup damper mechanism.

Damper mechanism with spring seats having balls disposed therein for decreasing frictional resistance


A technique, and associated system and computer executable program code on a computer readable storage medium, for automatically correcting distortion of a front-projected display under observation by at least one camera. The technique may be employed in a myriad of front-projected display environments, e.g., single or multiple projectors and cameras are used. The technique includes: observing a first image, projected from at least one projector, comprising at least one target distribution of light intensities; for each conglomeration of white pixels of a difference image, compute a bounding box comprising a corresponding conglomeration of pixels in a framebuffer information of the camera, compute a bounding box comprising a corresponding conglomeration of pixels in a framebuffer information of the projector, compute an initial homography matrix, Htemp, mapping pixels of the projector's bounding box to those of the camera's bounding box, optimize the initial homography matrix, compute a central location, (Cx, Cy), of the camera's bounding box using the initial homography matrix; and using a plurality of correspondence values comprising the correspondence, compute a corrective transform to aid in the automatic correcting of the display.

In general, the present invention relates to light projector systems used for information display on a surface. Most, if not all, light projector systems are subject to display distortion, whether caused by perturbations of an electronic and/or mechanical nature (e.g., vibrations common to most viewing environments, such as ventilation system operation, doors closing, and so on), resulting in display mis-calibration. Here, the continuous monitoring of an active display is done to acquire a model of the display surface while the display is in use. Light-projectors are being explored and used for more-demanding tasks in connection with augmented-reality applications, interactive displays, and groups of projectors employed to collectively render high-resolution immersive environments. The placement of projectors is often constrained by the amount of display distortion that can be tolerated. In order to avoid image distortion, a projector must either be placed so that the optic axis is perpendicular to the display surface plane or the display distortion must be corrected. Tilting a projector in the vertical plane induces a distortion commonly referred to as keystoning. Arbitrary placement of a projector yields an image that is governed by a more general projective distortion. Off-axis placement of light projectors induces significant planar parallax on the display surface. Although commodity solutions exist for removing this distortion, they involve iterative, menu-driven user interaction or physical alignment of the projector, and in either case interrupt the use of the display. User interaction is infeasible in a number of scenarios including mechanically aligned multi-projector displays that are subject to mechanical drift and perturbations; in those cases, projector(s) must be manually reconfigured, often.
More-particularly, the instant invention is directed to a technique and system for continuous rectification of arbitrary off-axis distortions that does not require user monitoring/interaction by incorporating at least one camera into the display system to function in a novel process to continuously monitor the state of calibration. Of interest, here, is to correct distortions due to the relative positioning of the projector with respect to the display surface. The (one or more) camera(s) automatically detects when the projector's orientation has changed, without requiring explicit fiducial or targets in the world coordinate system. The method runs in concert with interactive display applications and has minimal impact on frame-rate. An initial rectifying transform is recovered automatically by projecting target 'points', or fiducials/targets of a selected intensity/brightness distribution, and observing them within a camera. The display is then warped and passively monitored for calibration error and motion of the projector. The technique distinguishes between distortions due to miscalibration and intentional/desired projector framebuffer changes. A consistency/correlation/similarity score is calculated (and optimized) by, first, generating a predicted view based on the current framebuffer contents and correlating this prediction with the camera's captured, or observed, image. This may be accomplished by normalizing a correlation function, whereby an overall consistency measure is derived through randomly sampling points within a small mask of selected size of the predicted view and correlating them with corresponding points over a neighborhood in the observed/captured image. Poor correlation scores indicate that the projector has moved and re-calibration and geometric correction is required. Calibration consistency measures are sufficiently robust to distinguish small motion of the projector from continuously changing imagery.
As one will readily appreciate in connection with the instant technical disclosure, there are many fundamental distinguishing features of the instant invention from conventional methods. On occasion, the following manuscript authored by the applicants included herewith and labeled ATTACHMENT A (Steele and Jaynes, 2002) is referenced herein: Robert M. {Matt} Steele, and Jaynes, Christopher O., "Monitoring and Correction of Geometric Distortion in Projected Displays," pgs. 1–8, Central European Conference on Computer Graphics and Computer Vision, 4–8 Feb. 2002; Steele and Jaynes, 2002 is incorporated by reference herein to the extent it provides technical background information, by illustrating the rigorous mathematical and engineering analyses performed by applicants of their unique technique and system.

Monitoring and correction of geometric distortion in projected displays

University of Kentucky Research Foundation


Systems and methods for geological medium exploration are provided herein. A method of geological medium exploration may include generating vibrations in a geological medium and recording wave-fields at a surface and in a borehole. Additionally, the method may include obtaining a wave field modification operator and applying the wave-field operator to a full range of seismic data to achieve a spectrally-modified wave field.

Various techniques and technologies have been implemented in geological exploration. One technique commonly referred to as the "seismic method" includes generating vibrations in the earth and recording reflected signals. Generally, attempts to improve the seismic methods for geological exploration have been aimed at increasing the resolution of recorded measuring curves. In particular, filtration (in the frequency domain) and deconvolution (in the time domain) were used and based exclusively on the recordings of elastic vibrations made on the surface of the Earth.
Presently, strict requirements and challenges related to the efficiency of the seismic method with new geological targets of exploration (for example, unconventional deposits of shale gas and tight gas) have exposed previously used methods of signal processing/conversion as less effective at locating such targets.


A center door assembly for a dump bed and a method for removing the door from the dump bed. A frame is mounted in a wall of the dump bed and has a pair of opposite and spaced apart channels. A pair of elastomeric inserts are removably mounted in the channels. A retractable door has a pair of edges slidably received in the inserts and is movable linearly within the channels between a closed position and an open position. A pivot linkage assembly is operatively connected to the door for linearly moving the door between the closed and open positions. The elastomeric inserts are removed from the channels through a bottom opening in the channels providing lateral space between the channels to enable the door to be removed from the frame. The elastomeric inserts are provided with bend areas enabling them to be compressed for removal from the channels.

1. Technical Field
The present invention relates to dump bodies on trucks. More particularly the present invention relates to dump bodies which are pivotally mounted such that the front may be elevated and the contents removed by gravity through a chute located in a rear tailgate. Specifically, the present invention relates to an improvement in coal chutes which enhances the longevity and operability by means of an easily replaceable coal chute door within an elastomeric track.
2. Background Information
Many trucks have a bed or body that is lifted upwardly relative to the vehicle to unload materials by gravity from within the bed. Dump bodies for industrial use, such as dump trucks and coal trucks, typically employ a tailgate which is pivotally mounted to the top of the side walls of the dump body and extends across the width of the bed, such that it may swing between an open and closed position as the front of the dump body varies in elevation.
These rear tailgates oftentimes include a center door assembly called a "coal chute". The coal chute is substantially narrower than the rear tailgate and includes a door that can be selectively opened or closed. Common coal chute designs involve sliding the door up and down within tracks mounted in the sidewalls of the chute. Using a pivot arm, the user draws the door upwards along the chute door track before the bed of the dump truck is lifted. As the bed is lifted, the material within the bed exits through the coal chute in a contained and controlled stream that can be fed directly onto a ditch, intake basin, or onto a conveyor belt.
Due to the enormous tonnage carried by such trucks and the abuse to the walls of such truck bodies, the retaining chute door and the door track is subjected to distorting forces and are oftentimes broken or dented by movement of the material within the dump body or through the chute itself. When the cute door or track becomes distorted, the chute's effectiveness is diminished as the door cannot form a proper seal or slide within the track. Therefore gravel, coal, sand or other particulate matter can escape through the resulting gap. Consequently, it is not uncommon for the chute door to become unusable and require replacement or repair.
Replacing or repairing parts of the chute is very time consuming and expensive. Typical chutes have welded tracks, pivot arms, plates, and various other components. The chute assembly itself is welded onto the tailgate and difficult to remove. Furthermore, when the chute door or track is repaired or replaced, these items must be re-welded to the tailgate body, adding more time and expense to the process of replacing or repairing a part of the chute.
Therefore, the need exists for a center door assembly for a dump bed which includes easily replaceable and repairable parts, which parts are not welded to the tailgate so disassembly and reassembly time and expense will be minimized.

Center door assembly for dump bed and method of removing retractable door therein


A paint composition including a surface-modified fluoro-resin powder and a dispersion medium for dispersing the fluoro-resin powder, with the dispersion medium containing a heat-resistant resin and a solvent for dissolving the heat-resistant resin. The paint composition is useful for painting a sliding part, such as parts of a compressor. In particular, the paint composition is useful for forming a resin layer on sliding surfaces that contains the surface-modified fluoro-resin powder and heat-resistant resin for enhancing sliding properties of these surfaces.

The present invention relates to a paint composition and a sliding part.
Since fluoro-resins excel in heat resistance, sliding properties, and water and oil repellency, a resin layer containing fluoro-resin powder has conventionally been formed on the surface of a sliding part to improve the sliding properties. For example, Japanese Laid-Open Patent Publication No. 59-108850 proposes a piston for an engine whose outer surface of the skirt portion is baked-coated with a coating material prepared by dispersing flaked aluminum and fluoro-resin powder in a heat-resistant resin (epoxy resin). Japanese Laid-Open Patent Publication No. 10-122040 proposes a piston for an internal combustion engine wherein a coating layer composed of fluoro-resin, polyimide, and iron oxide powder is formed on the peripheral surface of the piston skirt. Japanese Laid-Open Patent Publication No. 2001-11372 proposes a paint composition composed of polytetrafluoroethylene (PTFE), polyamide imide, and alumina particles, wherein the weight ratio of PTFE to polyamide imide is 5 to 10 inclusive: 95 to 90 inclusive, and containing 5 to 10 parts by weight inclusive of alumina particles to 100 parts by weight of the total of PTFE and polyamide imide. A piston for an internal combustion engine that has the coating film of the paint composition on the peripheral surface of the piston skirt is also proposed. Japanese Laid-Open Patent Publication No. 2000-249063 proposes the formation of a coating layer containing fluoro-resin as the major component on the peripheral surface of the piston of a compressor used in the air-conditioning system of vehicles.
The lubricant oil in a compressor is atomized by compressing coolant gas, such as chlorofluorocarbon flowing when the compressor is operated, which is then delivered to the sliding parts composing the internal mechanisms of the compressor to lubricate the sliding parts. However, when a compressor kept without operation for a long period of time is restarted, the lubricant oil adhered on sliding portions may be flushed away by the coolant gas. For example, in the initial stage of the operation of a swash plate compressor, wherein a piston is connected to the swash plate via a shoe, and is reciprocated in a cylinder bore by the rotation or oscillation of the swash plate, the swash plate slides on the shoe before the lubricant oil reaches the sliding surfaces of the swash plate and the shoe. Moreover, before the lubricant oil reaches the sliding surfaces of the swash plate and the shoe, the coolant in the gaseous state reaches the sliding surfaces, and plays a role to flush away the lubricant oil remaining on the sliding surfaces. Therefore, in the initial stage of the operation, the swash plate slides on the shoe in a dry state without the lubricant oil. During the period after the compressor is started and before the coolant gas returns to the compressor to form an oil mist (the period is only about one minute), a sufficient quantity of oil is not present on the sliding portions that require lubrication despite the operation of the compressor. It is extremely important to secure lubrication on the sliding portions for such a period when the quantity of lubricant oil is insufficient.
In recent years, carbon dioxide has attracted people's attention as a coolant for compressors; however, when carbon dioxide is used as a coolant, the compressive load on a swash plate via a piston is significantly larger than the compressive load when a chlorofluorocarbon-based coolant is used. In order to secure high reliability for compressors even in such a strict sliding environment, the improvement of sliding properties of the sliding portions, through the improvement of seizure resistance, wear resistance, and adhesion to base materials of the sliding portions, has been demanded.
As described above, the improvement of sliding properties by forming a coating layer containing fluoro-resin powder on the surface of a sliding part is disclosed in the above-cited four patent publications. Although fluoro-resins excel in heat resistance, chemical resistance, weather resistance, sliding properties, water and oil repellency, and electrical properties, the integration of fluoro-resins with other materials is difficult because of the difficulty of adhesion. The members composed of a fluoro-resin also has poor adhesiveness to the adhesives used for cladding the member composed of a fluoro-resin with other members.
Among the above-cited four patent publications, Japanese Laid-Open Patent Publication No. 59-108850, Japanese Laid-Open Patent Publication No. 10-122040, and Japanese Laid-Open Patent Publication No. 2001-11372 disclose that the average particle diameter of the fluoro-resin powder is made within a predetermined range for improving the stability of dispersion in paint, and the flatness of formed coating films. However, none of these patent publications disclose the improvement of the sliding properties of resin layers containing fluoro-resin powder by improving the wettability and adhesiveness of the fluoro-resin particles.


Methods and systems for fan speed control based on memory margin are disclosed. According to an aspect, a method includes determining an operating margin of a memory interface. The method also includes determining whether the operating margin of the memory interface meets a predetermined condition. Further, the method includes controlling a speed of a computing system cooling fan based on the operating margin in response to determining the operating margin meets the predetermined condition.

1. Field of the Invention
The present invention relates to computer cooling and regulation systems, and more specifically, to control of fan speed and memory regulators based on memory margin.
2. Description of Related Art
As computing processing power increases, computing systems require more energy to operate. This can lead to heat dissipation problems. Typically, cooling fans are used to cool computing systems, although such cooling fans can consume a lot of power if they are constantly operating or not operating efficiently. For at least these reasons, it is desired to provide improved systems and techniques for controlling computing system cooling fans for improving efficiency.

Fan speed and memory regulator control based on memory margin

LENOVO ENTERPRISE SOLUTIONS (SINGAPORE) PTE. LTD.


The present disclosure provides a semiconductor manufacturing fault detection and management system and method for monitoring at least one manufacturing entity to detect state changes.

The present disclosure relates generally to the field of semiconductor manufacturing and, more particularly, to a semiconductor manufacturing fault detection and management system and method.
The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and manufacturing ICs and, for these advances to be realized, similar developments in IC processing and manufacturing have been needed. For example, an IC is formed by creating one or more devices (e.g., circuit components) on a substrate using a fabrication process. As the geometry of such devices is reduced to the submicron or deep submicron level, the IC's active device density (i.e., the number of devices per IC area) and functional density (i.e., the number of interconnected devices per IC area) has become limited by the fabrication process.
Furthermore, as the IC industry has matured, the various operations needed to produce an IC may be performed at different locations by a single company or by different companies that specialize in a particular area. This further increases the complexity of producing ICs, as companies and their customers may be separated not only geographically, but also by time zones, making effective communication more difficult. For example, a first company (e.g., an IC design house) may design a new IC, a second company (e.g., an IC foundry) may provide the processing facilities used to fabricate the design, and a third company may assemble and test the fabricated IC. A fourth company may handle the overall manufacturing of the IC, including coordination of the design, processing, assembly, and testing operations.
The complexity of process steps and time-consuming process of manufacturing advanced semiconductor devices mandates efficient processing systems and methods, specifically the methods of detection and management of system errors, excursions, and fault detection of systems in a semiconductor fabrication environment. Common practice for error detection systems has been to allow service clients to collect or retrieve trap messages or errors and to then send the information to a system administrator to perform any system checking or corrective action. However, sometimes false error messages or trap messages may be sent to an administrator due to a malfunctioning or unstable checking system, unstable or malfunctioning network interconnects or devices, or unstable or busy application service system.
Accordingly, what is needed is a system and method for providing detection and management of system faults or errors in a semiconductor manufacturing environment.

Semiconductor manufacturing fault detection and management system and method

Taiwan Semiconductor Manufacturing Company, Ltd.


A boost converter module, a method of manufacturing the module and a power converter employing one or more of the same. In one embodiment, the boost converter module includes: (1) a power switch, (2) first and second snubber diodes series-coupled between the power switch and a converter output, (3) a snubber capacitor and a boost diode series-coupled across the second snubber diode and (4) an encapsulant substantially surrounding the power switch, the first and second snubber diodes, the snubber capacitor and the boost diode to join the power switch, the first and second snubber diodes, the snubber capacitor and the boost diode into an integrated package, the integrated package having: (4a) a control input coupled to the power switch, (4b) a power input coupled to the power switch, (4c) a snubber inductor input, coupled to a node between the snubber capacitor and the boost diode and (4d) a power output coupled to the converter output.

A power converter is a power processing circuit that converts an input voltage into a specified output voltage. In many applications requiring a DC output, switched-mode DC/DC converters are frequently employed to advantage.
Unlike most of the electronics industry, the power electronics industry rarely utilizes standardized circuit configurations in design work. Whenever a converter is required, a new design is generally created. As the industry exists today, there are multitudinous converter designs in use. Any standardized circuit integration in this area could greatly benefit the establishment.
Lack of integration in converter circuits generates obstacles to standardizing circuits and parts, resulting in long design cycles. Not only is more time required to design an entire circuit, but there is also a greatly increased chance for design errors to arise. Furthermore, designs utilizing power components in discrete forms possess inherent problems not usually associated with integrated circuits.
In addition to design problems, labor-intensive assembling processes and poor manufacturability usually associated with employing discrete parts greatly increase production costs. Since there is no standardization, all assembly is accomplished manually. Human error becomes a concern as expenses increase with mistakes in assembly such as placing components in the wrong position, backwards or even in the place of another element.
Along with manufacturability improvements, increased power density is a continuing goal of modern power supply (e.g., power converter) design. High power density is particularly crucial in applications wherein the allocated space for the power supply relative to the power output is restricted. Large amounts of board area are wasted as the assembler must be able to manually manipulate the components opposed to automated construction which require less construction space and result in less assembly errors.
In addition to being highly compact, the power supply should be efficient to limit heat-creating power dissipation. To dissipate the heat generated in the power supply, typically, heat sinks are mounted on the power supply components. In such components, the power devices are usually attached to the heat sinks manually. Individual heat sinks for the discrete components of the power converter raise some concerns, namely, it creates additional costs that cannot be readily absorbed in a cost competitive market; also, it decreases the flexibility necessary to design a higher circuit density power supply.
During the past several years, there have been many efforts trying to integrate power circuits in the power electronics industry. Many power metal oxide semiconductor field-effect transistors (MOSFETs) and isolated-gate bipolar transistors (IGBTs) used in motor drive industry are integrated in one package formulating so-called power modules. Instead of dealing with multiple discrete active switches, either MOSFETs or IGBTs, designers deal with only one packaged module for a circuit. These type of modules are typically composed of the same type of active switches, and snubber circuitry is excluded.
In power supply industry, the effort has been concentrated on the integration of control, drive and power switch circuitry in one package. Power Integrations, Inc., for instance, has come up with the product family called "TOPSwitch", which integrates a power MOSFET with its associated drive and control circuit packaged in T0220, T0251, or T0252 package. See TOPSwitch Family Data Sheet, by Power Integrations, Inc. of Mountain View, Calif., June 1994. Due to limitation of power handling capability and inflexibility of the control configuration, it is limited to the low power applications.
Accordingly, what is needed in the art is an integrated power module in a standardized package that may be implemented in a high power density and high performance power supply.

Encapsulated modular boost converter and method of manufacture therefor


Provided is a magnetic nano temperature measurement method under a triangle wave excitation magnetic field relating to a technical field of nano measurement. The method further comprises steps of: (1) positioning a magnetic nano sample at a measured object; (2) applying a triangle wave excitation magnetic field on area of the magnetic nano sample; (3) detecting a triangle wave excitation magnetic field-time curve and a magnetization-time curve of the magnetic nano sample; (4) obtaining a magnetizing curve of the magnetic nano sample, namely excitation magnetic field-magnetization curve, by the triangle wave excitation magnetic field curve and the magnetization curve, and sampling the magnetizing curve to obtain magnetization Mi of the magnetic nano sample under excitation magnetic field Hi; and (5) determining temperature of the measured object by curve fitting with excitation magnetic field Hi as input, magnetization Mi as output, and a relationship between the excitation magnetic field and the magnetization as objective function. The invention obtains a magnetizing curve rapidly using a triangle wave excitation magnetic field, and realizes real-time and precise temperature measurement based on magnetic nanoparticles by inversion algorithms according to the magnetizing curve based on a temperature measurement model of magnetic nanoparticles under a DC magnetic field.

Temperature is one of physical quantities of the seven basic units set by the International System of Units and is also one of the most basic physical quantities of materials in the nature. Temperature measurement is of great importance for cognition of nature of materials in the nature. Magnetic nano temperature measurement method, a brand new temperature measurement method characterized in non-invasion, obtains temperature information mainly by measuring magnetization of magnetic nanoparticles and by inverse calculation based on certain model. Non-invasion property of magnetic nano temperature measurement method makes it have broad application prospects under special circumstances such as deeply in vivo and in other confined spaces.
Temperature measurement deeply in vivo and in other confined spaces remains a worldwide problem severely hindering development of related applications in the biomedical field such as tumor hyperthermia and drug transportation. Tumor hyperthermia technique, a tumor surgery known as the "Green Treatment" characterized in non-invasion or mini-invasion, treats a tumor mainly by differences of temperature tolerance between normal cells and tumor cells in vivo. Drug transportation technique releases a drug at a designated location and a predetermined amount by magnetic nanoparticles coated with drug laden polymer and by RF heating, where measuring and controlling temperature of the magnetic nanoparticles is critical to releasing the drug at a designated location and a predetermined amount. Unfortunately, at present, although temperature measurement technique under normal circumstances such as thermal resistances has already been very mature with properties of high precision and high real-time, temperature measurement technique under special circumstances such as deeply in vivo remains developing slowly. Challenges in temperature measurement in vivo mainly lie in the special circumstance in vivo and its safety requirements, which makes contact and non-contact temperature measurement methods in prior art inapplicable. Therefore, breakthrough in temperature measurement in vivo is bringing a technical revolution to related biomedical applications, and temperature measurement in vivo with high precision and high real-time remains a worldwide problem to be solved.
Development of related magnetic measurement technology brings twilight to solving the worldwide problem of precise and real-time temperature measurement in vivo. In recent years, development of magnetic resonance thermometry provides a reliable solution to temperature measurement in vivo. In 2008, Warren et al. realized high-precision temperature imaging by coherence of inner molecules in magnetic resonance, which is significant for research in tumor hyperthermia and drug transportation. Besides, in 2009, J. B. Weaver realized magnetic nano temperature measurement through experiments by amplitude ratio between the triple harmonic generation and the quintuple harmonic generation of AC magnetization of magnetic nanoparticles. In 2012, Liu Wenzhong realized precise temperature measurement using magnetic nanoparticles by DC magnetic susceptibility of magnetic nanoparticles and by derivation and experimental verification of theoretical models based on Langevin's function model, and finished theoretical model research on temperature measurement using magnetic nanoparticles by AC magnetic susceptibility of magnetic nanoparticles and by simulation afterwards. The researches pave the way for non-invasive temperature measurement in vivo, however, due to lack of proper theoretical model research and adequate experimental research, magnetic nano temperature measurement technique remains immature, in particular, real-time and precise temperature measurement technique lacks adequate theoretical and experimental researches. Therefore, realizing non-invasive, real-time and precise temperature measurement remains an urgent problem to be resolved in technical fields like biomedicine.

Magnetic nano temperature measurement method using triangle wave excitation magnetic field

HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY


A process for the preparation of an alkenyl-substituted succinic anhydride wherein the alkenyl substituent has a number average molecular weight of from about 500 to 5000 and the average number of succinic groups per alkenyl group is greater than 1.2 which comprises:. (a) reacting a polyolefin having an alkylvinylidene isomer content of less than about 10 percent and a number average molecular weight of about 500 to 5000 with maleic anhydride in the presence of a free radical initiator at a temperature in the range of about 100.degree. C. to 220.degree. C. to provide a mixture of alkenyl succinic anhydride having an average of greater than 1.2 succinic groups per alkenyl group and unreacted polyolefin, wherein the conversion of polyolefin is from about 30 to about 65 percent, and PA0 (b) reacting the mixture of alkenyl succinic anhydride and unreacted polyolefin with maleic anhydride at a temperature in the range of about 200.degree. C. to 250.degree. C. to thereby provide an alkenyl succinic anhydride having an average of greater than 1.2 succinic groups per alkenyl group, wherein the total conversion of polyolefin is about 5 to 40 percentage points higher than the conversion in step (a).

The present invention relates to a process for preparing compositions which are useful as intermediates for dispersants used in lubricating oil compositions or as dispersants themselves. In addition, some of the compositions prepared by the present process are useful in the preparation of high molecular weight dispersants which have superior dispersant properties for dispersing sludge and varnish. Such high molecular weight dispersants also advantageously impart fluidity modifying properties to lubricating oil compositions which are sufficient to allow elimination of some proportion of viscosity index improver from multigrade lubricating oil compositions which contain these dispersants.
It is known in the art that alkenyl-substituted succinic anhydrides have been used as dispersants. Such alkenyl-substituted succinic anhydrides have been prepared by two different processes, a thermal process (see, e.g., U.S Pat. No. 3,361,673) and a chlorination process (see, e.g., U.S. Pat. No. 3,172,892). The polyisobutenyl succinic anhydride ("PIBSA") produced by the thermal process has been characterized as a monomer containing a double bond in the product. Although the exact structure of chlorination PIBSA has not been definitively determined, the chlorination process PIBSA materials have been characterized as monomers containing either a double bond, a ring other than succinic anhydride ring and/or chlorine in the product. [(See J. Weill and B. Sillion, "Reaction of Chlorinated polyisobutene with Maleic Anhydride: Mechanism Catalysis by Dichloramaleic Anhydride", Revue de l'Institut Francais du Petrole, Vol. 40, No. 1, pp. 77-89 (January-February, 1985).]Such compositions include one-to-one monomeric adducts (see, e.g., U.S. Pat. Nos. 3,219,666; 3,381,022) as well as adducts having polyalkenyl-derived substituents adducted with at least 1.3 succinic groups per polyalkenyl-derived substituent (see, e.g., U.S. Pat. No. 4,234,435).
Commonly assigned International Patent Application No. PCT/US89/04270, Publication No. WO 90/03359, dated Apr. 5, 1990 and entitled "Novel Polymeric Dispersants Having Alternating Polyalkylene and Succinic Groups" discloses copolymers prepared by reacting an unsaturated acidic reactant, such as maleic anhydride, with a high molecular weight olefin, such as polyisobutene, in the presence of a free radical initiator, wherein at least about 20 percent of the total high molecular weight olefin comprises an alkylvinylidene isomer and wherein the high molecular weight olefin has a sufficient number of carbon atoms such that the resulting copolymer is soluble in lubricating oil.
U.S. Pat. No. 4,234,435 to Meinhardt et al., assigned to The Lubrizol Corporation, discloses substituted succinic acylating agents derived from polyalkenes, such as polybutene, and a dibasic carboxylic reactant, such as maleic acid or anhydride, wherein the polyalkenes have a number average molecular weight of about 1300 to 5000 and a ratio of weight average to number average molecular weight of about 1.5 to 4. These acylating agents are further characterized by the presence of an average of at least 1.3 succinic groups for each equivalent weight of substituent group. Meinhardt et al. teach that such acylating agents are prepared by heating the polyalkene and carboxylic reactant with chlorine in a one-step process or, alternatively, by first reacting the polyalkene with chlorine and then reactinq the resulting chlorinated polyalkene with the carboxylic reactant This patent further teaches that such substituted succinic acylating agents and their derivatives are useful lubricating oil dispersant additives which also exhibit viscosity index improving properties.
U.S. Pat. No. 4,873,004 to Beverwijk et al., assigned to Shell Oil Company, discloses an alkyl or alkenyl-substituted succinic anhydride, wherein the alkyl or alkenyl group on the anhydride has a number average molecular weight of from 600 to 1300 and Wherein the average number of succinic groups per alkyl or alkenyl group is between 1.4 and 4.0. Beverwijk et al. teach that these alkyl or alkenyl-substituted succinic anhydrides can be prepared by mixing a polyolefin with maleic anhydride and passing chlorine through the mixture, or by reacting a chlorinated polyolefin with maleic anhydride. Beverwijk et. al. further teach that the succinimide derivatives of such substituted succinic anhydrides are useful dispersant additives for lubricating oils.
U.S. Pat. No. 3,367,864 to Elliot et al., assigned to Castrol Limited, discloses in Example I thereof the preparation of a polyisobutenyl succinic anhydride by the reaction of about a 1:1 molar ratio of polyisobutylene and maleic anhydride in refluxing toluene and in the presence of a di-tertiary-butyl peroxide free radical initiator. Elliot et al. further teach that the succinic anhydride product produced by this method is similar to the product obtained by thermally reacting polyisobutylene and maleic anhydride at 240.degree. C. for 30 hours.
It has qenerally been recognized in the art that the polyisobutenyl sucoinic anhydride prepared by employing a conventional thermal process is primarily a monomeric one-to-one adduct, that is, having about one succinic group per polyisobutenyl group in the product however, recent analysis of a number of polyisobutenyl succinic anhydride products produced by following the free radical-initiated process of Example I of U.S. Pat. No. 3,367,864 has resulted in a finding that such products are monomeric adducts containing an average of about 1.6 or greater succinic groups per polyisobutenyl group.
Moreover, European Patent Application Publication No. 0,355,895 A2, published Feb. 28, 1990, discloses a process for the preparation of polyolefin-substituted succinic anhydrides in which the average molar ratio of succinic groups to polyolefin chains is greater than 1.3 to 1, which comprises heating a polyolefin with at least a molar excess of maleic anhydride, wherein the polyolefin employed contains at least 70 percent of the terminal groupings in a structure having an alpha olefinic bond or structures in equilibrium with such alpha olefinic structures. Thus, this European patent application teaches that greater than 1.3 succinic groups per polyolefin group can be obtained when the polyolefin employed is one wherein the predominant isomer is an alkylvinylidene.

Two-step free radical catalyzed process for the preparation of alkenyl succinic anhydride


A method and apparatus for directing messages through a network wherein multiple tables for directing messages through the network are maintained and provided. Each table corresponds to a virtual private network and contains routing information specific to that virtual private network. A separate routing table is maintained for each VPN. In one embodiment the messages are forwarded using plain IP forwarding using a route table associated with the VPN. In another embodiment separate forwarding tables using labels are generated for each virtual private network. The messages are forwarded by looking up the label in the table corresponding to the VPN In a third embodiment, a single forwarding table is utilized where the table is built based on separate routing tables for each virtual private network.

1. Field of the Invention
The present invention relates to the field of networking and more specifically to virtual overlay networks (VONs) and virtual private networks (VPNs).
2. Description of the Related Art
Virtual private networks (VPNs) allow users to appear to be on the same private network although there may be many (usually public) networks in between the users. FIG. 1A illustrates the logical appearance to users of a virtual private network. FIG. 1B illustrates a high level view of the actual network configuration.
Packets destined from one user (say in Chicago in the illustration of FIG. 1B) to another user (say in Boston in the illustration of FIG. 1B) may be transmitted through an internet service provider (ISP) which supports VPNs. Each site connected to the ISP network advertises to the ISP a set of destinations reachable within the site. The ISP then redistributes this information to all other sites in the set of sites which form the VPN. This process is further described in Heinanen, et al., VPN support with MPLS, Internet Draft, March 1998.
Since the ISP may support multiple VPNs, and since these VPNs may use private address spaces (and, thus the addresses spaces may be non-unique), the routing system within the ISP needs to be able to unambiguously differentiate reachability information (i.e., private address space information) for the various VPNs. Heinanen, et al describes that this may be accomplished by having the ISP assign each VPN its own VPN identifier (VPN-ID) and having the routing system use a combination of the VPN-ID and the reachability information provided by the sites for routing. In such a system, a single routing system may support multiple VPNs whose address spaces overlap with each other.
FIG. 2 illustrates an exemplary prior art routing system using VPN-IDs and reachability information provided by the sites for routing. As illustrated by FIG. 2, a packet to be routed may include a virtual private network identifier (VPN-ID) 201, reachability information (e.g., private addressing information) 202, an internet protocol (IP) header 203 and payload information 204. A single route table 206 is maintained and is indexed by the combination of the VPN-ID 201 and the reachability information 202.
As is shown in FIG. 2, prior art solutions provide a flat address routing space by simply combining the VPN-ID with the reachability information provided by the sites.
It would be useful to provide more fine-grained control over the routed topology for individual VPNs.

Method and apparatus for virtual overlay networks


Provided is a method and apparatus for electrically detecting the location of bond failure and wire breakage occurring during tensile strength testing of a wire sample having first and second bond foots affixed to respective first and second support pads. The method and apparatus monitors the voltage levels of first and second electrically conductive probes. The first probe has a primary lead in electrical contact with the first support pad and a secondary lead in electrical contact with the first bond foot. Similarly, the second electrically conductive probe has a primary lead in electrical contact with the second support pad and a secondary lead in electrical contact with the second bond foot. Voltage detection circuitry is provided in electrical contact with the first and second probes for detecting the voltage level at each of the respective primary and secondary leads to generate the respective corresponding output signals. Comparator circuitry is further provided in electrical contact with the voltage detection circuitry for receiving and comparing each of the output signals to a selected reference value and generating a supplemental output signal indicating the location of bond failure or wire breakage.

As electronic technology advances, larger numbers of electronic components may be formed and interconnected as integrated circuitry on common substrates. Separate wire interconnections are still required, however, to connect integrated circuit chips to non-integrated circuit components and to other integrated circuits as well as connector leads and pins. These interconnections are typically accomplished by bonding one end of a selected interconnect wire to a first circuit point with the aid of a bonding tool. Thereafter, the length of the interconnect wire is then paid out to form a loop between the first circuit point and a selected second circuit point. The wire is then bonded to the second circuit point and the standing part of the wire is broken adjacent to the second circuit point.
Historically, this bonding has been accomplished by placing the end of a bonding tool against the upper surface of the wire and applying pressure to hold the lower surface of the wire against the circuit point to which the wire is to be bonded. Sonic energy is imparted to the wire and the circuit point at the end of the bonding tool to cause mechanical and electrical bonding of the wire and circuit point.
Regardless of the bonding technique utilized, those skilled in the art will recognize that the reliability of the related microelectronic systems is directly related to the tensile strength of the interconnect wires referenced above and the reliability of the bonds created at the first and second circuit points. Various methods and apparatus have thus been designed and used to determine the tensile strength of interconnect wires for research purposes as well as quality control measures during conventional production processes.
See, for example, U.S. Pat. No. 3,564,911 issued to J. W. Slemmons et al. which discloses a wire bond strength tester comprising a self-centering and self-damping hook which is suspended from one end of a balanced beam disposed for pivoting about a pivot point between the extremities. The beam is loaded with a weight as a function of a required pulling force to be applied by the hook assembly. In operation, a test circuit is moved under the hook and the beam is tilted to permit the hook to engage an interconnect wire of a microelectronic circuit. In operation, a wire is engaged and the beam is thereafter permitted to pivot upwards in response to the applied load. An upper mechanical stop is also provided to prevent excessive pivoting and to test the vertical slack of the conductor. If the bond of the interconnect wire or its vertical slack is within the required limits, the upper mechanical stop is not contacted and a successful test is indicated. In contrast, if a mechanical stop is contacted, an unsuccessful test is indicated.
U.S. Pat. No. 4,282,759 issued to Merrell discloses a method and apparatus for non-destructive testing of beam-lead integrated circuit connections. As disclosed by Merrell, a beam-leaded device is provided in which each individual lead has pull tab with a weakened area thereon in order to provide a non-destructive means for testing the beam leads. The beam-lead device is tested by inserting a hook of a gram pull tester into an opening at the tab and pulling on the tab until the weakened area is broken. The weakened area is selected such that it will break when subjected to a predetermined pull. This predetermined amount is selected to be less than that required to break the tensile strength of the diffusion bond between the beam-leads and the conductors to which they are connected.
U.S. Pat. No. 4,697,461 issued to Jabs discloses a method and apparatus for verifying the seismic integrity of an electronic component. According to the invention, a force of a desired magnitude is applied to the lead of an electronic component contained in an electric circuit. The magnitude of the force corresponds to the expected maximum force which would be exerted on the lead by an earthquake. An indication is thus provided when the lead has been subjected to the applied force for a given period of time corresponding to the approximate period of time the maximum force of an earthquake would be exerted on the lead. This force is released if the desired magnitude has been applied for a further preset period of time which is greater than the given period of time, or if the magnitude of the applied force exceeds a preset maximum value.
U.S. Pat. No. 4,453,414 issued to Ronemus et al. discloses a method of testing the bond strength between a lead and an electrical device which includes mounting the device to a pedestal which is coupled to a load sensor. As disclosed by Ronemus, the lead is pulled from the device by a freely manipulatable grasping tool. A load differential indicated by the load sensor is observed as an indication of the bond strength between the lead and the device. The apparatus in accordance with the invention includes a support arm which is movable along a predetermined path and to which is mounted a pedestal for supporting a device, the leads of which are to be pull tested. A predetermined bias force resists a movement of the arms such that a movement of the arm registers a predetermined minimal pull strength of the leads.
U.S. Pat. No. 4,907,458 issued Biggs et al. discloses a method and apparatus for testing microcircuitry bonds. According to the invention, a wire bond is engaged by a hook, and the force with which that wire is urged to move away from the hook is measured as the force required to maintain the hook stationary. In the preferred method, the hook is fixed to a structure whose vertical position remains substantially fixed while the magnitude of the pulling force is measured. The vertical position of the electronic apparatus remains fixed while the hook is moved vertically and rotationally to place the hook under a wire notwithstanding that such a method requires capability of vertical movement of both the electronic apparatus and the hook.
U.S. Pat. No. 4,895,028 issued to Mayer discloses a method of pull-testing wire connectors on an electrical device. According to the invention, an upward pulling force is applied to a wire loop by a motor-driven loading arm through a hook which is connected to the free end of a flexible cantilever beam in the arm. A strain gauge is provided in the beam to measure its deflection and thus the applied pulling force and supply a signal corresponding to this measured force. The actual force is applied to the bonds and is calculated by generating a signal signifying the distance the hook has moved when the strain gauge starts to generate a signal.
The conventional prior art devices discussed above provide a general background in respect of the design and use of pull testing methods and apparatus for determining bond and tensile strength. For the most part, these device have been used in connection with conventional manufacturing processes to ensure the reliability of the selected bonds and interconnect wires.
While the prior art systems provide a broad indication of tensile strength, they do not provide any indication of the specific failure mode, i.e. whether there has been a break at the center span, upper bond, lower bond, or a lift of the respective bonds. From a research standpoint, this information is of critical importance to provide meaningful feedback for the selection of future interconnect wires having varying diameters, length and bonds. At present, technicians must visually inspect such failure modes and record the resultant information on an individual basis. As readily seen, this approach requires substantial labor and resultant costs which inevitably must be passed on to the consumer.

Method and apparatus for detecting wire bond pull test failure modes


A power storage apparatus, electric device, electric vehicle, and power system are disclosed. In an example embodiment, a power storage apparatus includes a battery block comprising a plurality of battery cells and an isolating unit that enables wireless information transfer regarding battery information of the battery block.

The present disclosure relates to a power storage apparatus as well as to an electric vehicle that utilizes power from a power storage apparatus.
Recently, secondary batteries such as lithium-ion batteries have been rapidly expanding to applications such as storage batteries for automobiles and power storage apparatus in which secondary batteries are combined with an alternative energy system such as solar cells or wind turbines. In the case of using a large number of storage elements such as unit cells (also called electrical cells or simply cells, and designated battery cells as appropriate in the following description) in order to produce a large output, a configuration is adopted in which a plurality of storage modules are connected in series. A storage module contains battery blocks in which a plurality of battery cells (four, for example) are connected in parallel and/or in series. A large number of battery blocks are enclosed in an outer case to form a storage module (also called an assembled battery).
There also exists a battery system in which a plurality of storage modules are connected, and in which a control apparatus shared by the plurality of storage modules is provided. Each storage module includes a module controller, with communication between the module controllers and the control apparatus realized via a communication unit or other means.
In the case of using a plurality of battery cells, in some cases one of the plurality of battery cells will reach the low-voltage threshold even though other battery cells have not yet reached the low-voltage threshold, due to factors such as differences in self-discharge among the battery cells. If the battery cells are once again charged in such a state, a problem occurs in that a battery cell may not be sufficiently charged, and battery cell performance may not be sufficiently exhibited.
In order to compensate for such disparities among plural battery cells, battery cell balancing is typically conducted. Controlling cell balancing involves acquiring voltage information for a plurality of battery cells. Japanese Unexamined Patent Application Publication No. 2010-081756 describes a configuration for acquiring battery information from a battery cell.

Power storage apparatus and electric vehicle


An engine-driven breaker which is capable of providing a breaking force equal to that of a hydraulic or pneumatic breaker even with a small engine and which is small and light and easy to handle and has a simple construction enabling it to be manufactured cheaply. The engine-driven breaker has a breaker main body and a cylinder fixed inside the breaker main body and inside the cylinder an upper air chamber of variable volume is provided between an operating piston and a hammer piston and a lower air chamber of variable volume is provided below the hammer piston. An annular air passage connected by way of a throttling passage to a crank chamber housing a crank mechanism driving the operating piston is provided between the outer peripheral wall of the cylinder and the inside wall of the breaker main body, and first air holes and second air holes are provided in the cylinder wall passing through to the annular air passage in a position corresponding to a bottom dead center position of the hammer piston and in a position below that respectively. Upper air holes for connecting the upper air chamber and the crank chamber are also provided in the cylinder wall in the crank chamber just below a top dead center position of the operating piston.

1. Field of the Invention
This invention relates to an engine-driven breaker.
2. Description of the Prior Art
Known hand-held breakers for breaking concrete, rock and asphalt and the like include hydraulically driven breakers and pneumatically driven breakers.
These breakers are small and can provide relatively large breaking forces, but because they require large accompanying apparatuses such as hydraulic units and compressors there has been the problem that they can only be used at sites to which these driving apparatuses can be transported and within the reach of a connecting hose.
To solve this problem, engine-driven breakers have been being developed and used. An engine-driven breaker has the merit that it does not require an accompanying apparatus such as a hydraulic pressure source or a compressed air source and can be used anywhere as long as there is fuel.
However, conventional engine-driven breakers have been inferior to hydraulically driven breakers and pneumatically driven breakers in their breaking force. Consequently, there has been the problem that to obtain a necessary breaking performance it is necessary to mount a large engine and as a result the weight of the breaker increases and its ease of handling and operability deteriorate.


A microcontroller has an integrating analog-to-digital converter (IADC) with an in-situ autocalibrating functionality. On-chip autocalibrating circuitry supplies a first predetermined analog input voltage to the IADC and obtains a first data value from the IADC. The autocalibrating circuitry supplies a second predetermined analog input voltage to the IADC and obtains a second data value. The first and second data values are used to calibrate the IADC such that if the first input voltage is later supplied to the IADC, then the IADC will output a first predetermined desired digital output value and such that if the second input voltage is later supplied to the IADC, then the IADC will output a second predetermined desired digital output value. The first and second analog input voltages are generated on-chip so the calibration is performed automatically without having to supply external calibrating signals to the microcontroller. Other related methods and circuitry is disclosed.

There is heavy competition in the microcontroller market. Microcontroller manufacturers tend to monitor each other's product lines carefully and tend to provide microcontrollers having similar types of circuitry. A type of thinking prevails that seems to cause the various microcontroller manufacturers to provide similar types of circuitry because the competition provides that same type of circuitry. For example, contemporary microcontrollers typically include an analog-to-digital converter (ADC) and that ADC is typically either a successive approximation register (SAR) ADC, a sigma-delta ADC, or a sub-ranging ADC. Other types of ADCs are known such as, for example, flash ADCs, and integrating ADCs, but contemporary microcontrollers generally do not provide ADCs of these types. Sub-ranging ADCs are complex and therefore often involve substantial circuitry and therefore add significant cost to the microcontroller. SAR ADCs are fast, but are not particularly noise immune. Resolution is therefore typically low in the seven-bit to eight-bit range. Sigma-delta ADCs provide higher resolution, but are comparatively slow. In some applications, such as some motor control applications, a faster ADC is desired that is also relatively inexpensive and easy to implement.

Microcontroller having in-situ autocalibrated integrating analog-to-digital converter (IADC)


It is an object of the invention to provide a process for easily producing a glucan, which assures a high degree of safety and which does not generate an oxidation off-flavor, without using a hydroxide of an alkali metal such as sodium hydroxide. In a process of the present invention, a physically pulverized yeast is autolyzed with an intracellular enzyme thereof, in an electrolyzed alkaline water which is obtained by electrolyzing water.

A β-glucan is a substance, of which components of saccharides are polymerically bonded. There is reported that the β-glucan exhibits many physiological actions such as an action to improve an immune strength, antitumor action, cholesterol-lowering action, antiviral action, and an action to improve the number of leukocytes. In recent years, the β-glucans attract attentions as health foods, medicaments, and so on.
The above-described β-glucan is included in a cell wall of a yeast. There have been proposed many varied processes for obtaining the polysaccharide such as the β-glucan. For instance, in JP-A-2003-197, there is disclosed a process for obtaining a composition including a polysaccharide which comprises a lot of intact β-glucan, which is biologically highly active, by bacteriolyzing a yeast by effecting a protease, in particular, an enzyme agent, of which total glucanase activity is especially little. In addition, JP-A-2002-209598 proposes a process for obtaining a soluble polysaccharide, which consists of the steps of: physically pulverizing a yeast by using a high pressure homogenizer; autolyzing the yeast; and causing an action of a cell-wall digesting enzyme on a fraction of a rinsed yeast cell wall. There is disclosed that a soluble polysaccharide including a lot of β-glucan can be produced in high yield.
Further, in JP-A-11-508772, there is disclosed a process for obtaining a β-glucan-mannan preparation by separating a solid content from a product, which is obtained by autolyzing a germ cell at a pH of 5˜6 and at a temperature of 35° C.˜60° C. for 6˜48 hours. In addition, in JP-A-11-500159, there is disclosed a process for preparing a chitosan-glucan complex. In this process, the chitosan-glucan complex is prepared by a partial deacetylation, which consists of the steps of: treating a bacteria, which comprises a chitin, with an alkali solution; treating thus obtained product with a dilute mineral acid; and further treating the product with an alkali solution having a high alkalinity.
In JP-A-9-512708, there is disclosed a process for preparing an insoluble β-(1-3)-glucan particle by treating a yeast cell which comprises a glucan, by respectively using a suitable water-soluble alkali solution for extraction, an acid for hydrolysis, and an ethanol, etc. Further, in JP-A-9-322795, there is disclosed that a solution containing a microorganism fungus body, which has, as a component thereof, a water-insoluble glucan such as a yeast is treated with an oxide having a predetermined concentration and with a hydroxide which adjusts a pH of the solution to 10˜12.5, simultaneously. JP-A-9-322795 explains that this process simultaneously realizes cell destruction, bleaching, and viscosity drop of a producing microorganism. Accordingly, the water-insoluble glucan can be effectively purified.
However, above-described processes for obtaining the glucan by using an alkali, an acid, and an organic solvent, there are needed treatments such as neutralization and demineralization, which make the processes of the production complicated. In addition, if the products are provided as foods, these processes leave an anxiety in relation to a safety of the products. Moreover, these processes are not preferable in terms of the yields, either. Further, in the process in which an enzyme agent is used, there is an anxiety that the glucan may be degraded with amylase, etc., included in the enzyme agent, which leads to a problem that it is difficult to obtain a highly effective long chain glucan. Further, there cannot be sufficiently removed lipid in the yeast cell of the glucan obtained by the above-mentioned processes, so that there is an anxiety that the obtained product may be colored by an oxidation of the lipid, or an oxidation off-flavor may be generated.

Process for producing yeast-derived glucan


A composite of an anti-reflective coating on polysilicon is accurately etched to form a polysilicon pattern by initially etching the ARC with gaseous plasma containing helium and/or nitrogen which is substantially inert with respect to polysilicon.

The escalating requirements for high density and performance associated with ultra-large scale integration require responsive changes in conductive patterns, which is considered one of the most demanding aspects of ultra-large scale integration technology. High density demands for ultra-large scale integration semiconductor wiring require increasingly denser arrays with minimal spacing between conductive lines. This problem is exacerbated in manufacturing semiconductor devices having sub-half micron technology.
In accordance with conventional practices, an anti-reflective coating (ARC) is utilized in sub-half micron photolithography to minimize notches caused by reflections. In accordance with such conventional practices, design features of about 0.35 microns are printed using i-line lithographic techniques. Typically, an i-line photoresist is applied on a polysilicon layer, with an organic ARC disposed therebetween. This type of arrangement is routinely utilized in the manufacture of semiconductor devices, particularly for forming a gate electrode, wherein the gate electrode image is transferred to the polysilicon layer employing an anisotropic plasma etching technique. Thus, in order to pattern the polysilicon layer into a gate electrode, the ARC must be etched prior to etching the polysilicon layer to form the gate electrode.
Conventional practices involve the use of etching recipes based on fluorinated hydrocarbons, such as CF.sub.4 /O.sub.2 and CHF.sub.3 /O.sub.2 /Ar to etch the ARC. After etching the ARC, the polysilicon layer is conventionally etched employing a recipe such as Cl.sub.2 /Br.sub.2 with or without BCl.sub.3. Both the ARC and polysilicon layers are etched in a gaseous plasma.
It is extremely difficult, if not impossible, to etch a composite comprising of a polysilicon underlayer and an ARC thereon in a single chamber. In addition, the etch profiles of gate electrodes formed on a semiconductor substrate lack uniformity, notwithstanding their formation during the same etching procedure.
Accordingly, there exists a need for a method of manufacturing a semiconductor device wherein a composite of a polysilicon underlayer and an ARC thereon is etched in a single chamber to accurately pattern gate electrodes exhibiting uniform etch profiles.

Integrated arc and polysilicon etching process


Wiring for a semiconductor device which is suitable for high density device packing, and a method for forming the same, are disclosed. The wiring includes: impurity regions formed in a substrate on both sides of an insulated gate electrode; a first conduction layer formed on the impurity regions; and a second conduction layer formed in contact with the first conduction layer on one side of the gate electrode. The method includes the steps of: forming impurity regions in a substrate on both sides of an insulated gate electrode; forming a first conduction layer on the impurity regions; and forming a second conduction layer in contact on one side of the gate electrode with the first conduction layer.

The present invention relates to wiring for a semiconductor device, and more particularly to wiring for a semiconductor device which is suitable for high density device packing, and a method for forming the same.
In general, a conventional electrical connection wiring for a contact in a semiconductor device is produced by: forming an insulating film of a CVD oxide on a substrate having a semiconductor device formed thereon; forming holes in source/drain impurity regions; forming a titanium layer thereon for lowering contact resistance to the source/drain impurity regions; forming a TiN or Ti/W film as a diffusion prevention film; and forming an aluminum layer for electrical interconnection between cells. However, as semiconductor device packing advances, the size of chip has been reduced with consequential reductions in contact hole size. This has worsened the step coverage problems associated with the contact hole because the aspect ratio has increased as the hole has become smaller. An improved method for forming device wiring is needed.
Conventional wiring and a method for forming the wiring will be explained with reference to the attached drawings.
FIG. 1 illustrates conventional wiring for a semiconductor device, and FIGS. 2a-2d are cross-sections showing the steps of a conventional method for forming the wiring.
Referring to FIG. 1, the conventional wiring includes: a field oxide film 2 formed on a first conductive type semiconductor substrate (a P-type semiconductor substrate) 1; a gate electrode 4 formed on the P-type semiconductor substrate 1 insulated from surroundings; source/drain regions 8 of LDD structures formed on the substrate on both sides of the gate electrode 4; a CVD oxide film 9 and a planar protection film 10 in contact with a source/drain region 8; a TiN layer 12 formed on a titanium layer 11; an aluminum layer 13 formed on the TiN layer 12; and a silicide region 11a formed under a portion of the titanium layer 11 in contact with the source/drain regions 8 on one side of the gate electrode 4.
FIGS. 2a-2d illustrate sections showing the steps of a conventional method for forming the wiring.
Referring to FIG. 2a, a first pad oxide film and a nitride film are deposited in succession on a P-type semiconductor substrate 1 and a photoresist film is coated thereon and subjected to exposure and development for selective patterning. Using the patterned photoresist film as a mask, the nitride film and the oxide film are removed in succession (not shown). A field oxide film 2 is formed by thermal oxidation, and the photoresist film is removed. By way of thermal oxidation or chemical vapor deposition (CVD), an oxide film is deposited on the exposed surfaces and a silicon oxide film is deposited on the first polysilicon layer by a chemical vapor deposition. A photoresist film is coated thereon and subjected to exposure and development so as to pattern the photoresist and leave only a portion at which a gate electrode 4 is to be formed. Using the patterned photoresist film as a mask, the silicon oxide film and the first polysilicon layer are subjected to anisotropic etching successively to form a gate electrode 4 and a gate cap oxide film 5.
After the gate electrode 4 and the gate cap 5 have been formed, phosphorus ions are injected into the P-type semiconductor substrate 1 on both sides of the gate electrode 4 at an ion injection energy of 30 KeV and dosage of abut 2.3xc3x971013 atoms/cm2 to form lightly doped source/drain regions 6. By way of thermal oxidation or chemical vapor deposition, a silicon oxide film is deposited and anisotropically etched to form sidewall oxide films 7 at sides of the gate electrode 4 and the gate cap oxide film 5. Then, arsenic ions are injected into the P-type semiconductor substrate 1 aside the sidewall oxide films at an ion injection energy of 7 at 40 KeV and dosage of about 4.0xc3x971015 atoms/cm2 to form highly doped source/drain regions 8.
Referring to FIG. 2b, the gate oxide film 3 on one side of the gate electrode 4 is removed. An undoped thin chemical vapor deposition oxide film 9 is formed on the exposed surfaces to a thickness of 1000 xc3x85 and a planar protection film (BPSG) 10 is formed on the film 9 to a thickness of 5000 xc3x85 and heat treated at an elevated temperature of 800-900xc2x0 C. to make the surface planar. A photoresist film is coated and subjected to photolithography and development to pattern the photoresist film selectively.
Referring to FIG. 2c, the exposed planar protection film 10 and the undoped CVD oxide film 9 are removed by reactive ion etching to expose the source/drain impurity regions 8, after which the photoresist film is removed.
Referring to FIG. 2d, a titanium layer 11 of about 1000 xc3x85 in thickness is sputtered on the entire surface for lowering the contact resistance, a TiN layer 12 of about 500 xc3x85 in thickness is sputtered thereon to serve as a buffer for the titanium layer and aluminum, and an aluminum layer 13 of the about 7000 xc3x85 in thickness is also sputtered thereon. A photoresist film is coated and subjected to photolithography and development so as to pattern the photoresist film selectively, i.e., only leave a portion under which wiring is to be formed. Using the pattered photoresist film as a mask, the exposed aluminum layer 13 and TiN layer 13 are removed in succession, and subjected to heat treatment for lowering resistance of the wiring, which results in formation of a silicide 11a under the titanium layer 11 in contact with the source/drain impurity region 8.
The aforementioned wiring for a semiconductor device has the following problems.
First, the formation of the titanium layer, TiN layer and aluminum layer by sputtering (which produces high velocity ions of random direction) causes inferior step-coverage in the contact hole and, therefore, low reliability of the wiring.
Second, the etching of the thick insulating film on the semiconductor substrate at a shallow junction for formation of the contact hole may damage the semiconductor substrate including the source/drain regions.
Third, the implantation of etching gas into the semiconductor substrate during the formation of the contact hole increases a contact resistance between the semiconductor substrate and the wiring.
Fourth, as device packing density increases, the aspect ratio of the contact hole increases and the alignment tolerance between the gate structure and the contact hole for the bit line decreases (due to a size reduction in, and greater step of, the contact hole) which increases misalignment between the contact hole and the wiring making the wiring susceptible to a short with the gate electrode or the semiconductor substrate.
Accordingly, the present invention is directed to wiring for a semiconductor device and a method for forming the same that substantially obviates one or more of the problems due to limitations and advantages of the related art.
These and other advantages in accordance with the purposes of the present invention are achieved by providing wiring for a semiconductor device that includes: impurity regions formed in a substrate on both sides of an insulated gate electrode; a first conductive layer formed on each of the impurity regions; and a second conductive layer in contact on one side of the gate electrode with the first conductive layer.
In another aspect of the present invention, a method is provided for forming wiring for a semiconductor device that includes the steps of: forming impurity regions in a substrate on both sides of an insulated gate electrode; and forming a second conductive layer in contact on one side of the electrode with the first conductive layer.
The foregoing and other objectives of the present invention will become more apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from this detailed description.

Hyundai Electronics Industries, Co., Ltd.