The invention relates to a method for the controlled application of a stator-current target value (ISnom) and a torque target value (Mnom) for a polyphase machine (4) that is supplied by an electronic power converter. According to the invention: current components (ISdnom, ISqnom) in a co-ordinate system (d, q) with a fixed rotor flux or rotating magnetic pole are calculated in accordance with a torque target value and in asynchronous machines in accordance with a rotor-flux target value (ψRnom), a calculated rotor-flux actual value (ψ<SB>R</SB>) or a rotating magnetic-pole flux; a stator-circuit frequency (ω<SB>S</SB>) is determined; a terminal-flux target value (ψKnom) is calculated in accordance with the values (ISnom, ISqnom, ψ<SB>R</SB>, ω<SB>S</SB>) by means of the machine parameters (L, R<SB>S</SB>), said terminal-flux target value being subsequently projected onto a flux-course curve, selected from stored, off-line optimised flux-course curves. This permits the state of the stator current (I<SB>S</SB>) to be regulated in relation to the rotor flux (ψ<SB>R</SB>) or rotating magnetic-pole flux by means of momentary values, facilitating a stationary and dynamic precise control of motor currents (I1,I2,I3) and thus the torques (M) of a polyphase machine (4).

The invention relates to a method for controlled application of a stator current set point value and of a torque set point value for a converter-fed rotating-field machine.
Pulse-controlled inverters with a constant input voltage are frequently used in conjunction with a field-oriented control method in order to feed rotating-field machines whose torque can be varied in a highly dynamic form to desired values within a wide rotation speed range. A drive system such as this is normally also adequate to satisfy very stringent technical demands for the control quality. Subject to the precondition of terminal currents which can be applied in any desired manner, the magnetic flux and the torque of a rotating-field machine can in principle be set continuously variably to desired values, although only if all of the electromagnetic system parameters of a sufficiently accurate description model of the machine are known. The associated terminal voltages can then be determined continuously with the aid of a single processing system—on the basis of the measurement variables of the terminal currents and the rotation speed—as a function of a nominal variable, for example for the torque. If the dynamic requirements for the control of the rotating-field machine are particularly stringent, the pulse repetition frequency must likewise be made high. This has a disadvantageous effect on the efficiency and the costs of the inverter.
Traction converters for rail vehicles do not allow high switching frequencies to be used, because of the high power density and the efficiency requirements. For example, the switching frequency in the voltage adjustment range is only in the range from 300 Hz-800 Hz for locomotives, prime movers and heavy short-distance trains and 800 Hz-2 kHz for light short-distance traffic. In addition, the available intermediate-circuit voltage must be used optimally, that is to say no voltage margin may be demanded, for control reasons. In order to avoid unacceptable network reactions, the steady-state harmonic spectrum must be defined and it must be possible to influence it. Together with the restricted switching frequency and the maximum drive capability, this requires synchronous clocking methods for the pulse-controlled inverter.
The dynamic requirements for traction converters are likewise stringent. Both the disturbance response, for example in the case of sudden overhead line voltage changes, and the drive response, for example the desired high torque dynamic range, in order to cope with sliding and skidding processes, as well as mechanical drive oscillations, must be highly dynamic in comparison to normal steady-state drives.
Furthermore, the projected maximum current load on the converter must be maintained precisely, in order to avoid overdesign of the power section. It must still be possible to apply the predetermined current by means of the control method even in the event of disturbance and reference variable changes.
A control method is therefore required in which the stator current is applied. This at the same time allows an optimum steady-state and dynamic response for presetting the torque.
Accurate and highly dynamic control of the stator current has not been possible directly until now because of the considerable harmonics caused by the clocking process and because the machine parameters (straight inductance and main inductance) are highly non-linear for harmonics.
The publication "Die stromrichternahe Antriebsregelung des Steuergerätes für Bahnautomatisierungssysteme SIBAS 32" [Controller drive control close to the converter for SIBAS 32 railroad automation systems], printed in the German Journal "eb—Elektrische Bahnen" [Electric railroads], Volume 90 (1992), Issue 11, pages 344 to 350, discloses asynchronous machine drive control close to the converter based on the field-orientation method with the major functions of measured value detection, flux model, control structure and triggering equipment.
Analogue measurement variables must be recorded for drive control based on the proven method of field orientation. Two machine currents and the input voltage of the pulse-control inverter, also referred to as the intermediate-circuit voltage, are measured. In one variant, two conductor voltages are also measured. The motor rotation speed is recorded as a further measurement variable. If an inverter is feeding two parallel-connected traction motors, then both motor rotation speeds are recorded, and the arithmetic mean value is used for control purposes.
Field-oriented control is based on knowledge of the magnitude and angle of the rotor flux. Since these variables cannot be measured directly, computer models are generally used which simulate the internal structure of the asynchronous machine. A flux model is used in order to determine the rotor flux from the measured actual values of the voltage, current and the rotation speed. This comprises two known model elements of the asynchronous machine, specifically the voltage model and the current model. At low rotation speeds, the influence of the current model dominates while, in contrast, that of the voltage model dominates at higher rotation speeds. The structure that is used thus combines the advantages of both model elements, and can be regarded as a voltage model guided by the current model. The current model includes the rotor time constant as a parameter. During operation, the rotor impedance of the machine varies to a major extent with the rotor temperature. Knowledge of the instantaneous rotor impedance is accordingly necessary for the current model to work accurately.
The central object of the signal processing system is to drive the pulse-control inverter such that the traction motor follows the required set point values. The two conductor voltages as well as the three machine currents are converted to two orthogonal components in coordinate converters. The two orthogonal current components are now converted, using the flux angle, from the stator-fixed coordinate system to a system which revolves with the rotor flux space vector, that is to say the field orientation of the current components. After filtering, the actual values of the field-forming current component and of the torque-forming current component are then produced. These current components are identical parameters at a steady-state operating point.
In order now to determine the control output variables from the nominal flux and nominal torque as reference variables, the inverse structure of the asynchronous machine is normally modeled using a so-called decoupling circuit. This calculates the required voltage components from the flux set point value, from the magnetization current set point value taken from the magnetization characteristics, from the real current set point value and from the angular velocity of the rotor flux. Two current regulators are added to the outputs of the decoupling circuit for stabilization, for the field-forming current component and the torque-forming current component.
The triggering equipment is used to match the control system to the instantaneous intermediate-circuit voltage. The drive level for the pulse width modulator is calculated from the nominal voltage and the actual value of the intermediate-circuit voltage. The task of the triggering equipment is to produce the required voltage fundamental, whose frequency and amplitude are variable, at the motor by alternate switching of the three inverter branch pairs.
The switching times are calculated using two different modulation methods, depending on the operating mode. When the frequencies and voltages are low in the starting and slow speed range, asynchronous sinusoidal modulation is used. Since a large number of switching operations in this case occur in one period of the fundamental frequency, the switching vectors and the switching angles associated with them must be determined on-line by the processor. When the ratio of the switching frequency to the fundamental frequency, the so-called pulse count, reaches a value of about 10 to 8, the inverter must be clocked in synchronism with the fundamental frequency. As the fundamental frequency rises, the limited switching frequency of the inverter means that the pulse count must be reduced in steps. Pulse patterns that have been optimized off-line are used in this case. The most important optimization criterion is the root mean square value of the harmonic current since this is the main cause of the additional losses in the motor as a result of the converter feed.
The pulse pattern must therefore be selected as a second step after optimization. In this case, a family of characteristics is created for selection of the suitable pulse system for the processor, in which the most suitable pulse pattern which satisfies the constraints of the maximum switching frequency and maintenance of the minimum pulse width and of the maximum peak current value is entered for all possible discrete values of the fundamental frequency and drive level. The pulse pattern selection level, as well as the pulse angles which have been optimized for each pulse system and for each drive level off-line, are stored in table form in the signal processor unit. The modulation type and the pulse system which is also associated with the operating point required by the control system are first of all determined from the selection level in the program model triggering equipment. The switching times in the area of the optimized patterns can be calculated as a function of the instantaneous stator frequency from the switching angles stored for the relevant drive level. In the event of pulse system changes, the times must be chosen such that no equalization processes or undesirable current spikes occur.
This so-called voltage triggering equipment allows the manipulated variable of the voltage to be predetermined just by the magnitude and angle of the fundamental, with the instantaneous values of the other electrical variables then being predetermined by the pulse pattern, such that they can no longer be influenced on-line. If the dynamics of the manipulated variable are excessive, equalization processes occur which lead to excessive torque oscillations.
The publication "Direkte Selbstregelung (DSR) für hochdynamische Drehfeldantriebe mit Stromrichterspeisung" [Direct self-regulation (DSR) for highly dynamic rotating field drives with a converter feed], printed in the German Journal "etzArchiv", Volume 7 (1985), Issue 7, pages 211 to 218, describes direct self-regulation of a converter-fed asynchronous machine which operates without pulse width modulation, has little sensitivity to parameters and, in addition, has very good dynamic characteristics. When a rotating-field machine is being fed with a constant input voltage via a three-phase inverter, the space vector of the stator voltage can assume only seven discrete values. Ignoring the voltage which is dropped across the copper resistances of the stator windings and which is generally small in comparison to the stator voltage in the field weakening range, then the respective instantaneous value of the voltage space vector is the only factor determining the change in the velocity and the direction of the instantaneous position of the space vector for the overall flux. When the fundamental frequency clocking is in the steady state, the peak of the flux space vector therefore passes through an equilateral hexagon with a constant path velocity and with a slightly pulsating angular velocity.
In the case of fundamental frequency clocking, the only possible way to influence the torque of the asynchronous machine is to control the time intervals between the switching operations of the voltage space vector. Ignoring the voltages across the copper resistance of the stator windings (which are proportional to the current), the path velocity can very easily be reduced to the value zero in a three-phase inverter with a constant input DC voltage, specifically by connection of the seventh machine voltage space vector, whose magnitude has the value zero. As is known, any desired intermediate value of the path velocity, averaged for the pulse period, can be set by the choice of the duration of the two interval elements by using a pulse period comprising a first interval element in which the path velocity of the flux space vector is not reduced, and a second interval in which the flux space vector is stationary with respect to the stator axes.
The signal processing for direct flux self-regulation has a flux comparator and a torque comparator. An integrator is used to generate orthogonal components of the stator flux from the measured voltage values reduced by the voltage drop across the copper resistances of the stator windings in the asynchronous machine, and these components are converted to flux variables for each stator winding axis of the asynchronous machine. Each of these flux variables is compared with a flux reference variable, which can be derived from the torque control. This then results in very simple control in the basis rotation speed range in accordance with the following rule:
If the instantaneous value of the torque exceeds the set point value by more than a permissible tolerance, then the seventh space vector value whose magnitude is zero shall be applied instead of the instantaneous space vector value as determined by the flux self-regulation from the sixth outer space vector values of the machine voltage, until the actual value of the torque is below the set point value by more than the permissible tolerance. After this, the flux self-regulation once again determines the switching state of the inverter. The seventh voltage space vector value, whose magnitude is zero, can be produced, as is known, by two different switching states. Secondary conditions can be satisfied by means of appropriate selection criteria, for example the minimum switching frequency, and ensuring switching state minimum times.
This described procedure results in the angular velocity of the rotating component of the resultant flux linking, averaged over one pulse period, being automatically set to the value required to produce the desired torque, to be precise without any information about the shaft rotation speed or about instantaneous values of inductances, rotor impedance or other variables and parameters which must be known for a field-oriented control method. The slow and fast fluctuations in the input DC voltage to the inverter, which are generally always present, are taken into account automatically by the direct self-regulation, and thus have no effect on the torque, which is maintained in a predetermined tolerance band.
This direct self-regulation is suitable for a traction drive and results in an optimum dynamic response, although not in a reproducible steady-state response. Furthermore, this direct self-regulation does not permit an excessively low ratio of the switching frequency to the fundamental frequency.
The publication "Direkte Drehmomentregelung von Drehstromantrieben" [Direct torque control for three-phase drives], printed in the German Journal "ABB Technik", No. 3, 1995, pages 19 to 24, describes newly developed direct torque control. This direct torque control [DTC] is based on the theories of field-oriented control of asynchronous machines and of direct self-regulation. In the case of direct torque control, the motor and the inverter are largely integrated. All of the switching processes of the converter are dependent on the electromagnetic state of the motor. As in the case of direct-current machines, DTC allows the flux and torque to be controlled separately. There is no need for pulse-width modulation between the motor and the inverter control.
The core units of the DTC system are the units for hysteresis control of the torque and magnetic flux as well as the logic unit for switching optimization. Another important component of the system is the accurate motor model. By means of measurements of two motor currents and of the voltage in the DC intermediate circuit, the motor model produces actual value signals for the torque, stator flux, frequency and shaft rotation speed. The set point values for the torque and flux are compared with the actual values, and the control signals are produced by two-point control of the hysteresis. The switching optimization logic determines the best voltage vector on the basis of the set point values for the torque and flux. The stator flux is controlled via the output voltage of the inverter. In the case of DTC, the stator flux and torque are kept within the hysteresis limit, that is to say within the selected tolerance band. The state set point values are changed only when the actual values of the torque and stator flux differ from their set point values by more than the permissible hysteresis. If the rotating stator flux vector reaches the upper or lower hysteresis limit, a suitable voltage vector is used to change the direction of the stator flux, and thus to keep it within the hysteresis band. The required torque is achieved by stator flux vector control.
This direct torque control also results in an optimum dynamic response, in the same way as direct self-regulation. However, the steady-state response is not reproducible, and this direct torque control does not allow an excessively low ratio of the switching frequency to the fundamental frequency, either.
The publication "Direkte Selbstregelung, ein neuartiges Regelverfahren für Traktionsantriebe im Ersteinsatz bei dieselelektrischen Lokomotiven" [Direct self-regulation, a novel control method for traction drives used for the first time in diesel-electric locomotives], printed in the German Journal "eb—Elektrische Bahnen" [Electric railroads], Volume 89, (1991), Issue 3, pages 79 to 87, describes one implementation for direct self-regulation (DSR).

Method for controlled application of a stator current set point value and of a torque set point value for a converter-fed rotating-field machine


A hair curler device for winding hair strands in the application of spiral permanents. Two rod members are connected at one of their respective ends to a flexible elongated connector. The rod members include trapezoidal threads that cooperatively receive hair strands of a person. Removably mounted locking pieces embrace the rod members at a position along the rod members that substantially coincides with the end of the strand of hair being treated. A rubber band urges the free ends of the rod members toward each other.

1. Field of the Invention
The present invention relates to hair curler instruments for spiral permanents.
2. Description of the Related Art
Applicant believes that the closest reference corresponds to U.S. Pat. No. 4,955,401 issued to Parsons in 1990. Parsons' invention was intended to overcome the deficiencies of the prior art device, i.e. being uncomfortable and the smooth surface that permitted the hair strands to slide. To resolve this problem, a single rod 32 with radially projecting posts 34a and 34b was designed. However, it differs from the present invention because the hair strands are wound in two rods that are interconnected through a flexible connector thereby permitting a stylist to distribute the hair in two spaced apart rods kept in a spaced apart relationship with respect to each other and there are no uncomfortable rigid parts, like loop 60 and posts 32a; 32b; 34a and 34b in Parsons. Also, since several of these rods are required, the dimensions of loop 60 dictate that relatively thick hair strands be formed.
Other patents describing the closest subject matter provide for a number or more or less complicated features that fail to solve the problem in an efficient and economical way. None of these patents suggest the novel features of the present invention.


A shape memory alloy comprises Co, Ni and Al with a two-phase structure comprising a β-phase having a B2 structure and a γ-phase having an fcc structure, at least 40% by area of crystal grain boundaries of the β-phase being occupied by the γ-phase. The shape memory alloy can be produced by a first heat treatment step comprising heating at 1200 to 1350° C. for 0.1 to 50 hours and cooling at 0.1 to 1000° C./minute, and a second heat treatment step comprising heating at 1000 to 1320° C. for 0.1 to 50 hours and cooling at 10 to 10000° C./minute.

In the fields of robots, working machines, automobiles, etc. using electromagnetic motors, the weight reduction of drive systems has been demanded. However, because the output densities of the electromagnetic motors depend on their weight, only limited weight reduction is available in actuators using the electromagnetic motors. It has been thus desired to develop a small-sized, lightweight actuator capable of providing high output.
Actuators should satisfy the following conditions: moving parts are displaced to desired positions by a driving force; the moving parts are surely returned to start positions in a nonoperative state; sufficiently large output is provided such that moving parts can move even with a large load; etc. Springs are used as pressure-controlling members to bring the moving parts back to the start positions in a nonoperative state. In a case where a spring has large resiliency, a large driving force is needed to move the moving part against a spring force. It is thus desired to provide a spring displaced by a slight force.
Shape memory alloys have particularly attracted much attention as materials for actuators, because they can be strained as much as about 5% (shape recovery strain). The shape memory alloys are materials that can be returned to their original shapes at transformation temperatures or higher after deformed at certain temperatures. When a shape memory alloy having an austenitic phase, a high-temperature phase, is heat-treated with its shape constrained to memorize the shape, deformed in a martensitic phase, a low-temperature phase, and then heated, it returns to its original shape through a reverse transformation mechanism. This phenomenon is utilized for actuators. However, the shape recovery phenomenon by temperature change needs control by heating and cooling, and particularly thermal diffusion by cooling is a rate-determining step, resulting in low response to temperature control.
Ferromagnetic shape memory alloys excellent in a shape memory response speed have recently attracted much attention as novel materials for actuators. The ferromagnetic shape memory alloys have a phase transition structure (a twin crystal structure). When a magnetic field is applied to the ferromagnetic shape memory alloys, the martensitic unit cells (magnetization vectors in the cells) are reoriented along a magnetic field to induce strain. JP 11-269611 A discloses an iron-based, magnetic shape memory material composed of an Fe—Pd or Fe—Pt alloy, which is subjected to martensitic transformation by the application of a magnetic energy to generate magnetic strain. However, the iron-based magnetic shape memory alloys such as the Fe—Pd alloy and the Fe—Pt alloy have low ductility and thus low workability and mechanical strength as well as economic disadvantage because of high material costs. JP 5-311287 A discloses a Cu-based ferromagnetic shape memory alloy obtained by sintering a compacted mixture of Cu—Al alloy powder and Cu—Al—Mn alloy powder. However, because this Cu-based ferromagnetic shape memory alloy is produced by compacting, sintering and working powder materials, it disadvantageously has low workability and mechanical strength. Further, JP 11-509368 A and JP 2001-329347 A disclose magnetically driven actuators formed by Ni—Mn—Ga alloys. However, the Ni—Mn—Ga alloys are disadvantageous in workability, mechanical strength and repeating characteristics.
Ferromagnetic shape memory Ni—Co—Al alloys having excellent workability and shape recovery ratio and capable of being subjected to martensitic transformation have recently been proposed (see, for instance, JP 2002-129273 A). However, JP 2002-129273 A is silent about their mechanical strength.

Shape memory alloy and method for producing same

National Institute of Advanced Industrial Science & Technology


A method of manufacturing a semiconductor device includes a process of forming a gate electrode having a metallic silicide layer on a semiconductor substrate, a process of decreasing boundaries of grains on the surface of the metallic silicide layer, at least a portion of which is exposed, and a process of forming spacers comprising an oxide film on the side wall of the gate electrode; in this order. Thus, abnormal oxidation of the metallic silicide layer is avoided.

1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor element, and especially a semiconductor element which has metallic silicide layer in its gate electrode.
2. Description of the Related Art
As high integration of semiconductor devices proceeds, a demand for faster and finer elements of semiconductors increases. To meet this demand, a gate electrode comprising a metallic silicide layer is adopted for a semiconductor element of MOS structure.
A gate electrode having a metallic silicide layer is formed, for example, as described below.
At first, an isolation of an element is performed. After this, a gate oxide film and a polysilicon film are formed, in this order. Then, a metallic silicide layer is formed on the polysilicon film by a PVD method or a CVD method. A SiN layer is formed on top of the gate electrode with a thermal process using CVD of reduced pressure etc. This thermal process is performed at a comparatively high temperature in a range of 700° C. to 800° C.
After forming in SiN layer, a lithography for forming a gate electrode is performed. In addition, an etching process for forming a gate electrode is performed with this patterned SiN layer used as a mask. Thus, a gate electrode is formed. After this, the photo-resist used for etching is removed.
After removing the photo-resist, oxide films are formed for covering the side walls of the gate electrode with a CVD method of reduced pressure etc.
However, the conventional structure of the gate electrode mentioned above could not sufficiently recover from the damage received during the etching process, because the side wall of the gate electrode was covered with oxide film by a CVD method of reduced pressure. This is a problem to be solved. Moreover, over-etching of the gate oxide film occurs. Consequently, it becomes impossible to compensate for thinning of the gate oxide film. As a result, there was another problem of causing leakage of the gate.
Therefore, in order to prevent leakage of the gate, a method of performing heat oxidation treatment is generally used. But, in the method mentioned above, a heat treatment for forming SiN layer was necessary. Therefore, the metallic silicide was crystallized, and, the crystal was in a state that oxygen was likely to diffuse. An oxidation process in this state caused increasing oxidation of metal of W. and Si, and expansion of volume occurred. Therefore, difference of stress occurred between polysilicon and metallic silicide in the lower portion of the metallic silicide layer. A difference of stress also occurred between the metallic silicide and SiN layer in the upper portion of metallic silicide layer. As a result, fastening between the metallic silicide layer and SiN deteriorated, and peeling off of the SiN layer occurred.
That is, according to the method mentioned above, a gate electrode 40 comprising polysilicon layer 42, metallic silicide layer 43, and SiN layer 44 was formed. When its surface was observed, the state of the surface shown in FIG. 5(b) was recognized. In FIG. 5(b), metallic silicide crystal 45 grew like notches in the horizontal direction, because the side wall of gate electrode 40 was abnormally oxidized. In addition, SiN layer 44 was likely to peel off due to abnormal oxidation as mentioned above.
As a method of preventing abnormal oxidation mentioned above, a method of implanting nitrogen in the side wall of gate electrode 40 has been suggested (c.f. JP 08-321613).
However, the conventional method has a problem in that voids (vacancies) occur because of nitrogen implanted in the semiconductor substrate.

Method of manufacturing semiconductor element


Semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same are provided. The semiconductor devices include a semiconductor substrate and a lower interlayer insulating layer disposed on the semiconductor substrate. A lower semiconductor body disposed on or in the lower interlayer insulating layer. A lower TFT includes a lower source region and a lower drain region, which are disposed in the lower semiconductor body, and a lower gate electrode, which covers and crosses at least portions of at least two surfaces of the lower semiconductor body disposed between the lower source and drain regions.

1. Field of the Invention
The present invention relates to semiconductor devices and methods of fabricating the same and, more particularly, to semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same.
2. Description of Related Art
In general, semiconductor integrated circuits (ICs) widely employ discrete devices such as MOS transistors as switching devices. Most of the MOS transistors are directly formed on a semiconductor substrate. That is, the MOS transistors include channel regions and source and drain regions, which are formed in the semiconductor substrate. In this case, the MOS transistors may be referred to as bulk MOS transistors.
When the semiconductor ICs employ the bulk MOS transistors, increasing the integration density of the semiconductor ICs is reaching a technical limit. In particular, if the semiconductor ICs employ complementary metal-oxide-semiconductor (CMOS) circuits, it is more difficult to improve the integration density thereof. This is because a latch-up phenomenon occurs in the CMOS circuits. In recent years, thin film transistors (TFTs), which are stacked on the semiconductor substrate, are widely used to increase the integration density of the semiconductor ICs and also overcome the latch-up phenomenon.
FIG. 1A is a plan view of a conventional semiconductor device having a TFT, FIG. 1B is a cross-sectional view taken along line I-I′ of FIG. 1A, and FIG. 1C is a cross-sectional view taken along line II-II′ of FIG. 1A.
Referring to FIGS. 1A, 1B and 1C, an isolation layer 10 is provided in a predetermined region of a semiconductor substrate 5 to define an active region 10a. A pair of first impurity regions, i.e., a first drain region 20d and a first source region 20s, are disposed in the active region 10a and spaced apart from each other. A bulk gate electrode 15 is disposed to cross over a channel region that is disposed between the first drain region 20d and the first source region 20s. The bulk gate electrode 15 is electrically insulated from the channel region by a bulk gate insulating layer 12. Sidewalls of the bulk gate electrode 15 may be covered with a bulk gate spacer 17. The bulk gate electrode 15, the first drain region 20d, and the first source region 20s constitute a bulk MOS transistor.
A first interlayer insulating layer 22 is provided on the semiconductor substrate 5 having the bulk MOS transistor. A trench 27t is disposed in the first interlayer insulating layer 22. The trench 27t may overlap the active region 10a. A lower semiconductor body 30 is filled in the trench 27t. A pair of second impurity regions, i.e., a lower drain region 30d and a lower source region 30s, are disposed in the lower semiconductor body 30 and spaced apart from each other. A lower gate electrode 35 is disposed to cross over a channel region that is disposed between the lower drain region 30d and the lower source region 30s. The lower gate electrode 35 is electrically insulated from the channel region by a lower gate insulating layer 32. Sidewalls of the lower gate electrode 35 may be covered with a lower gate spacer 37. The lower gate electrode 35, the lower drain region 30d, and the lower source region 30s constitute a lower TFT. Also, as can be seen from FIG. 1A, the lower TFT may overlap the bulk MOS transistor. That is, the lower semiconductor body 30 may overlap the active region 10a, and the lower gate electrode 35 may overlap the bulk gate electrode 15.
Furthermore, the first drain region 20d may be exposed by a lower node contact hole 25h that is formed through the first interlayer insulating layer 22, and the lower node contact hole 25h may be filled with a lower semiconductor node plug 25. The lower semiconductor node plug 25 may be in contact with a bottom surface of the lower semiconductor body 30. For example, the lower semiconductor node plug 25 may be in contact with the lower drain region 30d. The lower semiconductor node plug 25 may be a semiconductor plug that is formed by a selective epitaxial growth (SEG) process using the first drain region 20d as a seed layer. Accordingly, when the semiconductor substrate 5 is a single crystalline semiconductor substrate, the lower semiconductor node plug 25 may also have a single crystalline structure.
Also, the lower semiconductor body 30 may be epitaxially grown using the lower semiconductor node plug 25 as a seed layer. Accordingly, when the lower semiconductor node plug 25 is a single crystalline semiconductor plug, the lower semiconductor body 30 may also have a single crystalline structure.
A second interlayer insulating layer 40 is provided on the semiconductor substrate 5 having the lower TFT. When the lower semiconductor node plug 25 has the same conductivity type as the first drain region 20d, at least the lower drain region 30 may be exposed by a metal node contact hole 42h that is formed through the first and second interlayer insulating layers 22 and 40, and the metal node contact hole 42h may be filled with a metal node plug 42. As a result, the metal node plug 42 is in contact with at least the lower drain region 30d. When the lower semiconductor node plug 25 has a different conductivity type from the first drain region 20d, the metal node plug 42 may extend and come into contact with the first drain region 20d. Further, the metal node plug 42 may be in contact with not only the drain regions 30d and 20d but also the lower semiconductor node plug 25.
A third interlayer insulating layer 45 is provided on the semiconductor substrate 5 having the second interlayer insulating layer 40 and the metal node plug 42. The metal node plug 42 may be exposed by a first lower interconnection contact hole 46a that is formed through the third interlayer insulating layer 45, and the lower source region 30s may be exposed by a second lower interconnection contact hole 46b that is formed through the second and third interlayer insulating layers 40 and 45. Also, the first source region 20s may be exposed by a third lower interconnection contact hole 46c that is formed through the first through third interlayer insulating layers 22, 40, and 45, and the lower gate electrode 35 may be exposed by a fourth lower interconnection contact hole 46d that is formed through the second and third interlayer insulating layers 40 and 45. Further, the bulk gate electrode 15 may be exposed by a fifth lower interconnection contact hole 46e that is formed through the first through third interlayer insulating layers 22, 40, and 45. The first through fifth lower interconnection contact holes 46a, 46b, 46c, 46d, and 46e may be filled with first through fifth lower interconnection contact plugs 47a, 47b, 47c, 47d, and 47e, respectively.
As can be seen from FIGS. 1B and 1C, when the semiconductor device includes a multi-layered transistor, the contact plugs 47a, 47b, 47c, 47d, and 47e are provided to apply a voltage to the bulk MOS transistor and the lower TFT. In this case, since the lower TFT is disposed over the bulk MOS transistor, the third and fifth lower interconnection contact plugs 47c and 47e and the bulk gate electrode 15, which are used to apply a voltage to the bulk MOS transistor, are disposed close to lateral and bottom surfaces of the lower TFT. Accordingly, as the body energy potential of the lower semiconductor body 30 varies with surrounding voltage conditions, the characteristics of the lower TFT may change. That is, the characteristics of the lower TFT depend on gate, source, and drain voltages of the lower TFT, like a bulk transistor or a silicon on insulator (SOI) transistor, and also are affected by circumstances (e.g., energy potential) around the lower TFT. For example, even if a voltage of 0 V is applied to the lower gate electrode 35 to turn off the lower TFT, once a voltage Vcc is applied to the bulk gate electrode 15 through the fifth lower interconnection contact plug 47e, an upper region of the lower semiconductor body 30 of the lower TFT remains turned off under the influence of the lower gate electrode 35, whereas lower and lateral regions of the lower semiconductor body 30 are more affected by the bulk gate electrode 15 and contact voltages as can be seen from reference characters 'A1' and 'B1', respectively, thus greatly increasing an off current of the lower TFT.
Therefore, it is necessary to develop semiconductor devices having TFTs in which a lower semiconductor body is not significantly affected by the surrounding energy potential.

Semiconductor devices having thin film transistors and methods of fabricating the same


An optical coupling system having a split sleeve with a metallized strip adhered to a housing barrel at one end. The sleeve may be smaller than an optical fiber ferrule. The sleeve may have spring-like flexibility and be stretched open at the slit sufficiently to permit insertion of the ferrule in the sleeve. The sleeve may be made of zirconia. The ferrule may be held by the sleeve's spring-like contraction around the ferrule. Attached at the other end of the barrel may be an optoelectronic element such as a vertical cavity surface emitting laser. An optical fiber end of the ferrule may be aligned with the laser. Since the ferrule may be held firmly by the sleeve attached to the coupling barrel, there would be virtually no movement or wiggle of the fiber end relative to the laser and thus the alignment may be maintained.

The invention relates to optical devices and more particularly to devices for providing coupling between optoelectronic elements and optical fiber.
Several patent documents may be related to optical coupling between optoelectronic elements and optical media. They include U.S. Pat. No. 6,086,263 by Selli et al., issued Jul. 11, 2000, entitled "Active Device Receptacle" and owned by the assignee of the present application; U.S. Pat. No. 6,302,596 B1 by Cohen et al., issued Oct. 16, 2001, and entitled "Small Form Factor Optoelectronic Receivers"; U.S. Pat. No. 5,692,083 by Bennet, issued Nov. 25, 1997, and entitled "In-Line Unitary Optical Device Mount and Package therefore"; and U.S. Pat. No. 6,536,959 B2, by Kuhn et al., issued Mar. 25, 2003, and entitled "Coupling Configuration for Connecting an Optical Fiber to an Optoelectronic Component"; which are herein incorporated by reference.
In the context of the invention, the optoelectronic element may be understood as being a transmitter or a receiver. When electrically driven, the optoelectronic element in the form of a transmitter converts the electrical signals into optical signals that are transmitted in the form of light signals. On receiving optical signals, the optoelectronic element in the form of a receiver converts these signals into corresponding electrical signals that can be tapped off at the output. In addition, an optical fiber is understood to be any apparatus for forwarding an optical signal with spatial limitation, in particular preformed optical fibers and so-called waveguides.
Fiber optic receptacle designs of the related art having sleeves use a fiber optic stub or other precision diameter devices or inserts to mechanically hold a sleeve in position. This method of mechanically mounting the sleeve prevents certain types of optical designs from being implemented.
In the related art, the standard single mode optical receptacle design may use various implementations of structure in conjunction with a fiber stub/pig-tail. However, since the stub/pig-tail is expensive and fragile and/or difficult to handle, a stub-less approach would be desirable.


A switch box having a connector comprises eaves for covering an upper part of the connector, side water stopping walls for covering both sides of the connector, and an upper water stopping wall rising from a frontal edge of the eaves. When water splashes on the box from above, the water is guided to the side water stopping walls by the upper water stopping wall, whereafter the water flows down along the side water stopping walls. As a result, water flow to the connector can be prevented.

1. Field of the Invention
The present invention relates generally to a connector-equipped switch box and, in particular, to a connector-equipped switch box in which a waterproofing structure is provided for preventing water entered from a switch knob or a box connection from flowing to the connector.
2. Description of the Related Art
A connector-equipped switch box is known from, for example, in Japanese Utility Model Laid-Open Publication No. HEI 5-6605. The general arrangement of the switch box is shown in FIG. 7 hereof.
As shown in this figure, switch box 100 is comprised of a housing 101, an operation knob 102 positioned upon the housing 101 and a connector 103 positioned alongside the housing 101. The housing 101 has a partition wall 104 for separating the operation knob 102 and connector 103. Between the partition wall 104 and operation knob 102, there is provided a groove 105. Formed on a side wall 101a of the housing 101 is a through hole 105a communicating with outside via the groove 105 for externally discharging water.
In the switch box thus arranged, water entered through a gap between the housing 101 and operation knob 102 is blocked or stopped by the partition wall 104 and externally discharged from the groove 105 via the through hole 105a. Thus, there is no concern over water flowing to the connector 103.
Generally, the housing 101 is mounted via a flange 106 thereof to a panel 107 shown by an imaginary line.
However, in the switch device 100 having the through hole 105a formed in the side wall 101a thereof, when the housing 101 is mounted in an inclined fashion so that the through hole 105a is positioned upwardly of the connector 103, water externally discharged via the through hole 105a may flow along the outer wall surface of the housing 101 to the connector 103. Thus, there is a limit in the degree of freedom of selecting the mounting position of the housing 101 or the position of provision of the through hole 105a.


A topical composition and method for the reduction of scar tissue and/or improving the appearance of scar tissue after it has formed. The topical composition includes one or more flavonoids formulated in a pharmaceutically acceptable topical carrier. The method includes the step of topically applying a composition including one or more flavonoids formulated in a pharmaceutically acceptable topical carrier to scar tissue to reduce the amount of, or improve the appearance of the scar tissue. The topical compositions and methods of the present invention reduce scar tissue after it has formed as well as improving the appearance of the remaining scar tissue.

1. Field of the Invention
The present invention relates to compositions and methods for the cosmetic treatment of scar tissue. More specifically, the method of the present invention, relates to the topical application of at least one flavonoid to scar tissue.
2. Brief Description of the Prior Art
Damage or injury to skin tissues and/or organs is a common occurrence. The body is most often able to isolate the damaged area and then repair itself by removing and replacing damaged tissue. Injury to tissues and organs can originate from a great variety of sources such as, for example, trauma, UV degradation, toxic and/or pathogenic degradation, thermal degradation (e.g. excessive heat or cold) and so forth. While the body has an impressive array of response mechanisms that limit tissue damage and promote repair, methods of increasing the speed and degree of repair are continually being sought out. Additionally, the presence of scar tissue can be unsightly, and the reduction of scar tissue is aesthetically desirable. In this regard, increasing the speed and/or degree that scar tissue is removed is beneficial in that it (i) decreases the visibility of unsightly tissue; (ii) decreases the chances of developing an infection or other ailment through re-injury of the scarred area or the surgical removal of scar tissue; and (iii) reduces health costs associated with treating such conditions.
Although compounds exist for promoting the healing of wounds, there exists a continuing need for additional and/or improved compounds for treating and/or reducing scar tissue.
Accordingly, it is an object of certain embodiments of the present invention to provide a composition that is effective for the treatment of scar tissue.
It is an object of other embodiments of the present invention to provide a method that is effective for the treatment of scar tissue

Methods for the treatment of scar tissue


In order to prevent a sheet of paper on which confidential information is formed as an image from being taken out, an MFP has a print data accepting portion to accept print data, an image-forming portion to form an image based on the print data onto a sheet of paper having an RFID tag provided with a memory and a data communication portion, an RFID reader/writer control portion to acquire tag identification information for identifying the RFID tag provided by the sheet of paper on which the image is formed based on the print data, a definition data control portion to store definition data including the acquired tag identification information, an external reader communication portion to communicate with a communicable RFID reader, and an abnormal state detecting portion to judge as an abnormal state the case where the external reader communication portion communicating with a communicable RFID reader is detected to be non-communicable with the RFID tag specified by the tag identification information included in the definition data.

1. Field of the Invention
The present invention relates to an image monitoring system, an image monitoring method, and an image monitoring program stored on a computer readable medium, and more particularly, to an image monitoring system for preventing confidential information outflow, an image monitoring method for preventing confidential information outflow, and an image monitoring program stored on a computer readable medium.
2. Description of the Related Art
In recent years, there is a need for prevention of leakage of confidential information. This is not limited to confidential information recorded in computers as electronic information; when confidential information is formed as images onto sheets of paper, these sheets of paper are need to be kept under control. The sheets of paper can be controlled by attaching thereto an RFID (Radio Frequency Identification) tag provided with a memory and a communication device.
Japanese Laid-Open Patent Publication No. 2005-141429 describes a parking-lot control apparatus comprising: a memory means to, for every piece of car identification information for identifying a car using a parking lot, store a communication address for information notification to an authenticated user of the car to which the car identification information is assigned; a first reading means to read the car identification information from the car when passing through a gate located in the parking lot; a second reading means to read user identification information for identifying the user passing through the gate in the car, the user identification information being read from a recording medium or a mobile terminal carried by the user; a judging means to judge whether the car is being used by an authenticated user of the car based on a reading result from the first reading means and a reading result from the second reading means; and a transmission means to, when the judging means judges that the car is not being used by an authenticated user of the car, read from the memory means a communication address corresponding to the car identification information read by the first reading means and to transmit information denoting that an unauthorized car use has occurred to the communication address.
According to the parking-lot control apparatus described in the No. 2005-141429 publication, the car identification information and the user identification information are read at the gate of the parking lot. Thus it is inevitable that the car should pass through the gate in order to drive the car out of the parking lot. In addition, the detection of unauthorized car use is disabled when the car passes through the gate with the car's identification information removed from the car.

Image monitoring system for preventing confidential information outflow, image monitoring method, and computer image monitoring program stored on a computer readable medium

Konica Minolta Business Technologies, Inc.


A semiconductor loading lead pin that does not tilt at a time of reflow. A void is sometimes left in solder between an electrode pad and the flange of a semiconductor loading lead pin. When reflow is carried out to load an IC chip, the solder for connection is melted and at the same time, the void in the solder is expanded. The solder escapes sideway along the groove portion, and thereby a flange is not raised by the void so that the semiconductor loading lead pin is not tilted.

Generally, the lead pin in a semiconductor package board of PGA (Pin Grid Array) type has been changing to the T type pin which is connected to the pad of the package board by soldering from the insertion type pin which is inserted into a through hole on the package board side in order to correspond intensified wiring density in recent years.
The T type pin is fixed to the electrode pad of a package board by soldering and likewise, the IC chip is also fixed to the electrode pad of the package board by soldering. The melting points of the solders for T pin connection and IC chip connection are made different from each other by changing the quantity of content of lead or their metallic composition so as to prevent the solder fixing the semiconductor loading lead pin from melting when the IC chip is connected by reflow.
The technology for enhancing the pull resistance of the T type pin has been disclosed in Prior Art 1.

Lead pin for mounting semiconductor and printed wiring board


A new and distinct variety of nectarine tree (Prunus persica var. nucipersica). The following features of the tree and its fruit are characterized with the tree budded on ‘Nemaguard’ Rootstock (non-patented), grown on Handford sandy loam soil with Storie Index rating 95, in USDA Hardiness Zone 9, near Modesto, Calif., with standard commercial fruit growing practices, such as pruning, thinning, spraying, irrigation and fertilization. Its novelty consist of the following combination of desirable features:                1. Vigorous, upright tree growth.        2. Fruit with a high degree of red skin color.        3. Heavy and regular production of large size fruit.        4. Fruit with very good flavor and eating quality.        5. Mild, sweet, sub-acid white flesh fruit.

Field of the Invention
In the field of plant genetics, we conduct an extensive and continuing plant-breeding program including the organization and asexual reproduction of orchard trees, and of which plums, peaches, nectarines, apricots, cherries, almonds and interspecifics are exemplary. It was against this background of our activities that the present variety of nectarine tree was originated and asexually reproduced by us in our experimental orchard located near Modesto, Stanislaus County, Calif.
Prior Varieties
Among the existing varieties of nectarine trees, which are known to us, and mentioned herein, 'Arctic Star' Nectarine (U.S. Plant Pat. No. 9,332), 'Arctic Sweet' Nectarine (U.S. Plant Pat. No. 9,542), our proprietary non-patented nectarine seedling selections '63MA524', '54Z380', '60Z643', '237LC83' and '6LG456'.


A composite structure includes a first laminate, a second laminate, and at least one core component located between the first laminate and the second laminate. The at least one core component includes a honeycomb core and at least one locking ply extending from the honeycomb core between the first laminate and the second laminate. The at least one locking ply is configured such that a pressure applied during a cure cycle of the composite structure retains the at least one locking ply between the first laminate and the second laminate thereby preventing movement of core component.

The subject matter disclosed herein relates to the manufacture of honeycomb composite structures.
Honeycomb composite structures are typically fabricated having one or more laminate structures formed from a selected number of plies, and one or more core elements, which are often honeycomb core elements. The core elements are bonded to the laminate structures under a cure cycle involving pressure and/or high temperature applied to the composite. The pressurization during the cure cycle in many structures causes movement of the honeycomb core elements so the resulting composite structure is not what was intended by design. Further, in some structures, the core elements may be crushed due to the movement.

Composite structure and core positioning ply


A networking system for a refrigerator is provided. The networking system includes a main controller for the refrigerator coupled to a first terminal provided on a body portion of the refrigerator, and a second terminal provided on the refrigerator door. The second terminal allows information related to the refrigerator to be input and received, and allows for wireless data exchange between the main controller and the first terminal such that the second terminal to be separated from the refrigerator and still perform such a data exchange. The use of a main controller and first and second terminals allows for increased levels of data storage, and easy access to various types of information.

1. Field of the Invention
The present invention relates to refrigerator, and more particularly, to networking system of the refrigerator and method for operating the networking system.
2. Background of the Related Art
Recently, according to a trend of refrigerators becoming larger, side-by-side type refrigerators having a home bar and a dispenser become popular. The home bar is provided for taking out food, such as soft drink and beer, from a refrigerating chamber without opening a refrigerator door, and the dispenser is provided for taking out water or ice from the refrigerator without opening the refrigerator door. Moreover, even a monitor may be attached to in place of the home bar for providing information on the refrigerator.
FIG. 1 illustrates a related art side-by-side type refrigerator. As shown in FIG. 1, the refrigerator is provided with a dispenser 5 in one side door 2 of a body 1, and a monitor 10 and a memory (not shown) in the other side door 3. The monitor 10 provides data stored in the memory to a user. However, a size of the memory provided to the door 2 is limited, much data can not be stored therein. According to this, the memory can provide various kinds of information to the user.

Networking system of refrigerator and method for operating the same


A semiconductor component having a body with an upper surface, a base zone having a portion adjoining the upper surface of the semiconductor body, at least one source zone embedded in the base zone, at least one gate electrode lying parallel to the upper surface that covers at least the portion of the base zone adjoining the upper surface, a contact region constructed and arranged as a buried layer in the base zone and projecting laterally beyond the source zone, the contact region having a higher conductivity than that of the base zone, and an electrode that contacts the source zone and the contact region. In order to improve the contact between base zone and source electrode, the contact region is fashioned as a layer buried in the base zone and projects laterally beyond the source zone. Also, a field effect controlled semiconductor component having at least one source zone, at least one vertical gate electrode arranged in a trench lying vertically relative to the surface, at least one base zone that laterally abuts the trench, a contact region having a depth greater than that of the source zone and a conductivity higher than that of the base zone and is electrically connected thereto, and an electrode that contacts the source zone and the contact region.

1. Field of the Invention
The present invention is generally directed to semiconductors and more specifically to a semiconductor component controllable by field effect that largely avoids an activation of the parasitic bipolar transistor.
2. Description of the Related Art
Semiconductor components of this species have been described, for example, in the article by Chang and Holroyd, "High Voltage Power MOSFETS With a Trench-Gate Structure" in Solid-State Electronics, Vol. 33, No. 3, 1990, pp. 381-386. The source electrodes directly contact the source zones and contact the base zones via contact regions that have a higher conductivity than the base zones. These contact regions serve the purpose of improving the contact between the source electrode and the base zones. The contact regions disclosed in the article are fashioned such that minority charge carriers flowing off from the inside of the semiconductor body to the source electrode must flow in the lightly doped base zone partly along the pn-junction between source zone. The light doping here causes a high voltage drop-off at the pn-junction that causes an emission of charge carriers from the source zone when a quantity of approximately 0.5 volts is exceeded. The parasitic bipolar transistor composed of source zone, base zone and inner zone can thus be activated and the semiconductor component is destroyed.

Field effect controlled semiconductor component


The invention relates to a radio receiver which receives reception waves modulated with a frame being a sequence of slots and reproduces transmission information that is distributed to the slots. An object of the invention is to increase the reliability of channel inference and improve the transmission quality without substantially altering a basic configuration. A radio receiver of the invention performs quasi-synchronous detection on reception waves modulated with a frame; determines an error in a sequence of first vectors and a sequence of second vectors as an average of deviations of particular symbol positions to be indicated by the sequence of first vectors indicating a sequence of words included in each slot in a signal space, and the sequence of second vectors indicating known information included in the slots; and compensates for the error in the signal space.

1. Field of the Invention
The present invention relates to a radio receiver which receives reception waves that are modulated with frames each being a sequence of a plurality of slots and restores transmission information that is distributed to the slots.
2. Description of the Related Art
The CDMA (code division multiple access) is a multiple access scheme that is superior in confidentiality and interference-resistibility and enables suppression of co-channel interference and effective use of radio frequencies.
With an additional advantage of enabling flexible setting of a radio transmission-characteristic for each sector cell with the aid of a technique of realizing, with high accuracy at high speed, transmission power control that is necessary to solve the near-far problem, the CDMA is applied to many mobile communication systems.
FIG. 7 shows the configuration of an exemplary radio receiver that is provided in a radio base station of a mobile communication system to which the CDMA is applied.
As shown in FIG. 7, the feeding point of an antenna 51 is connected to the input of a quadrature demodulator 53 via a bandpass filter (BPF) 52 and the output of a local oscillator 54 is connected to the local frequency input of the quadrature demodulator 53. One output of the quadrature demodulator 53 is connected to the writing port of a memory 57i via a cascade-connected low-pass filter (LPF) 55i and A/D converter (A/D) 56i, and the other output of the quadrature demodulator 53 is connected to the writing port of a memory 57q via a cascade-connected low-pass filter (LPF) 55q and A/D converter (A/D) 56q. The reading ports of the memories 57i and 57q are connected to a searcher 58 and corresponding inputs of a plurality of finger parts 59-1 to 59-N. The first to third inputs of each of the finger parts 59-1 to 59-N are connected to corresponding inputs of respective maximal-ratio combining parts 60S, 60T, and 60D. The maximal-ratio combining part 60S outputs a string of PILOT bits, FBI bits, and TPC bits (described later). The output of the maximal-ratio combining part 60T is connected to the control input of an error correcting part 62 via a TFCI inferring part 61. The output of the maximal-ratio combining part 60D is connected to a corresponding input of the error correcting part 62 and the input of a sync control part 63. The error correcting part 62 and the sync control part 63 output a sequence of data (described later) and a sync signal, respectively.
The finger part 59-1 is composed of the following components:                Despreaders 67i-1 and 67q-1 cascaded to the respective memories 57i and 57q and supplied with despreading codes from the searcher 58.        Pilot averaging parts 68S-1, 68T-1, and 68D-1 each having two inputs that are connected to the outputs of the despreaders 67i-1 and 67q-1, respectively.        Sync detecting parts 69S-1, 69T-1, and 69D-1 each of which has first to fourth inputs connected to the outputs of the despreaders 67i-1 and 67q-1 and the two outputs of the associated one of the pilot averaging parts 68S-1, 68T-1, and 68D-1 and whose outputs are connected to corresponding inputs of the maximal-ratio combining parts 60S, 60T, and 60D, respectively.
The finger parts 59-2 to 59-N are configured in the same manner as the finger part 59-1 is, and hence are not be described here. The components of the finger parts 59-2 to 59-N are given the same symbols as the corresponding components of the finger part 59-1 except that suffixes "2" to "N" are used in place of "1."
Further, in the following description, for items common to the finger parts 59-1 to 59-N, a suffix "C" meaning that it can be any of "1" to "N" will be used instead of the suffixes "1" to "N" for the sake of simplicity.
In the radio receiver having the above configuration, the bandpass filter 52 extracts a desired reception wave component from a radio-frequency signal arriving at the antenna 51. The quadrature demodulator 53 generates two orthogonal baseband signals I and Q by performing quasi-synchronous detection on the reception wave component based on a local frequency signal that is generated by the local oscillator 54 and has the same frequency as the nominal value of the reception wave component in prescribed accuracy.
The A/D converters 56i and 56q generate orthogonal discrete signals Id and Qd by oversampling the baseband signals I and Q in parallel by cooperating with the respective low-pass filters 55i and 55q.
The memories 57i and 57q temporarily store the discrete signals Id and Qd in time-series order.
The searcher 58 performs the following processing parallel with processing of calculating correlations between the above-mentioned despreading codes and the discrete signals Id and Qd stored in the memories 57i and 57q over a period that is plural times the cycle of the despreading codes and calculating and storing a delay profile as a sequence of average values of the correlations over the cycle of the despreading codes:                Refers to the delay profile at intervals of the cycle of the despreading codes and assigns an available one of the finger parts 59-1 to 59-N to each time point when the value of the delay profile exceeds a prescribed threshold. Alternatively, resets the finger parts 59-1 to 59-N every time a delay profile is generated.        Gives orthogonal, two kinds of despreading codes that are in synchronism with above-mentioned time points to the two respective despreading parts (denoted by symbol "67") of finger parts that are assigned in the above-described manner.
In the finger part 59-C, the despreaders 67i-C and 67q-C generate despread signals i-C and q-C corresponding to the respective baseband signals I and Q by multiplying the discrete signals Id and Qd by the two kinds of despreading codes that are supplied from the searcher 58.
Incidentally, as shown in FIG. 8, the despread signal i-C is a sequence of frames (a channel that is formed as a sequence of such frames will be hereinafter referred to as "DPDCH") each consisting of 15 slots that are arranged continuously in time-series order and each of which consists of a single field that has a constant word length Ndata and is to accommodate data to be transmitted.
For example, as shown in FIG. 8, the despread signal q-C is a sequence of frames (a channel that is formed as a sequence of such frames will be hereinafter referred to as "DPCCH") each consisting of 15 slots that are arranged continuously in time-series order and each of which consists of four fields to accommodate the following four respective kinds of bits:                PILOT bits that are given as a known bit string having a word length Npilot of 3–8 bits and are used for slot-by-slot synchronization.        TFCI (transport format combination indicator) bits that are unique bits or a bit string that has a word length NTFCI of 0–4 bits, belongs to a code sequence having a steep autocorrelation characteristic and a gentle and small cross-correlation characteristic, and indicates a format of the slot to which the TFCI bits belong.        FBI (feedback indicator) bits that have a word length NFBI of 0–2 bits and are used for transmission diversity.        TPC (transmission power control) bits that have a word length of 1 or 2 bits and are used for the above-mentioned transmission power control.
Combinations of the numbers of bits that the above four bit strings can have are shown in the bottom part of FIG. 8. However, they are not described here because they do not directly relate to the invention.
Cooperating with the searcher 58, the pilot averaging parts 68S-C, 68T-C, and 68D-C perform channel inference by, for example, calculating, in parallel, according to the WMSA (weighted multi-slot averaging) scheme, averages (hereinafter referred to as "average vectors"; see FIG. 9B) of vectors q1, q2, . . . (see FIG. 9A) each of which represents, in the signal space, despread signals i-C and q-C in the period of a field that should accommodate PILOT bits (described above) among the fields of each slot.
Cooperating with the searcher 58, the sync detecting part 69S-C sequentially outputs, one by one, the sum (hereinafter referred to as "first demodulation signal") S-C of a despread signal q-CS that corresponds to the difference between the sum (hereinafter referred to as "vector sum S") of vectors representing, in the signal space, the despread signal q-CS in the periods of fields to accommodate FBI bits and TPC bits (described above) among the fields of each slot belonging to a DPCCH and the average vector calculated by the pilot averaging part 68S-C.
Cooperating with the searcher 58, the sync detecting part 69T-C sequentially outputs, one by one, the sum (hereinafter referred to as "second demodulation signal") T-C of a despread signal q-CT that corresponds to the difference between the sum (hereinafter referred to as "vector sum T") of vectors representing, in the signal space, the despread signal q-CT in the period of a field to accommodate TFCI bits (described above) among the fields of each slot belonging to the DPCCH and the average vector calculated by the pilot averaging part 68T-C.
Cooperating with the searcher 58, the sync detecting part 69D-C sequentially outputs, one by one, the sum (hereinafter referred to as "third demodulation signal") D-C of a despread signal i-CD that corresponds to the difference between the sum (hereinafter referred to as "vector sum D") of vectors representing, in the signal space, the despread signal i-CD in the period of a single field to accommodate data (described above) among the fields of each slot belonging to a DPDCH and the average vector calculated by the pilot averaging part 68D-C.
The maximal-ratio combining part 60S maximal-ratio-combines the first demodulation signals S-1 to S-N that are output parallel from the sync detecting parts 69S-1 to 69S-N that are provided in the respective finger parts 59-1 to 59-N, and thereby generates a demodulation signal SRAKE that indicates values of fields to accommodate PILOT bits, FBI bits, and TPC bits and is to become a subject of decision decoding on these PILOT bits, FBI bits, and TPC bits.
The maximal-ratio combining part 60T maximal-ratio-combines the second demodulation signals T-1 to T-N that are output parallel from the sync detecting parts 69T-1 to 69T-N that are provided in the respective finger parts 59-1 to 59-N, and thereby outputs a demodulation signal TRAKE that indicates values of fields to accommodate TFCI bits (may include bit errors due to transmission errors).
The TFCI inferring part 61 infers, based on an autocorrelation characteristic (mentioned above), a string of most probable TFCI bits (hereinafter referred to as "inferred TFCI pattern") that is indicated by the demodulation signal TRAKE.
The maximal-ratio combining part 60D maximal-ratio-combines the third demodulation signals D-1 to D-N that are output parallel from the sync detecting parts 69D-1 to 69D-N that are provided in the respective finger parts 59-1 to 59-N, and thereby outputs a demodulation signal DRAKE that indicates data (described above; may include bit errors due to transmission channel errors).
The error correcting part 62 performs decoding processing (e.g., Viterbi decoding or turbo decoding) that complies with a prescribed channel coding scheme on the demodulation signal DRAKE, and thereby outputs a sequence of data in which bit errors that have occurred in the radio transmission channel are corrected.
Standard vectors that indicate a known frame sync pattern (FSW) in time-series order and indicate a sequence of regular symbol positions to be contained in the demodulation signal DRAKE according to a prescribed frame formation are given to the sync control part 63 in advance or when necessary according to a channel control procedure.
The sync control part 63 correlates the demodulation signal DRAKE with the standard vectors thus given and generates a sync signal indicating time points when the correlation result exceeds a prescribed threshold and has a local maximum.
Therefore, the demodulation and decoding of reception waves are performed with high reliability under the channel inference that is performed in such a manner that fields accommodating known PILOT bits that are included in each slot are used as references.
Incidentally, in the above conventional example, the channel inference is performed based on only PILOT bits and a signal indicating fields accommodating PILOT bits among the fields of a plurality of slots in the signal space is integrated in the channel inference process.
Therefore, the configuration of the conventional example has limitations not only in the adaptability to systems according to the provisions of the 3GPP (Third Generation Partnership Project) but also in the capabilities of providing a variety of added values and improving the performance (following three points):                Since the length of fields to accommodate PILOT bits is not necessarily kept constant, there is a possibility that desired high response speed and high accuracy of the synchronous detection cannot be attained with high reliability in a stable manner.        During a compressed mode, the level of reception waves lowers. However, resulting deterioration in transmission quality is not necessarily considered sufficiently in determining the specifications of various systems. Therefore, sufficient margins in performance are not secured.
However, particularly in the fields of mobile communication systems and wireless LANs in which the number of subscribers and the transmission capacity are expected to increase, advantages in price and performance as well as capability of future expansion are strongly required.
The above problems may be made less serious or solved through application of a prior art technique of realizing synchronous detection and elimination of interference by provisionally deciding data symbols that do not correspond to PILOT bits (see Japanese Patent Laid-Open No. 355849/1999, for example).
However, in practice, it is difficult in some cases to use such a prior art technique because it is complex in configuration in the following points and requires a large amount of processing:                The above-mentioned provisional decision can be made only after a string of TFCI bits is decoded and identified, despreading processing is performed based on a spreading factor SF suitable for the string of TFCI bits, and data obtained as a result of the despreading processing are detected synchronously.        Even after such provisional decision has been made, data (described above) should be detected again after being stored temporarily.


The invention relates to a device for supplying a hydraulic medium to a rotatably mounted drive element in a transmission case, the hydraulic medium being routed to a channel in the drive element by way of at least one channel in a coaxially adjacent element which corresponds to the drive element. Structurally favorable and reliable supply with hydraulic medium is achieved in that the drive element is nonrotatably connected to the other element and that the contact connection is at least one unthreaded conduit which is inserted tightly into the two channels and which extends directly from the element to the drive element.

The invention relates to a device for supplying a hydraulic medium to a drive element rotatably mounted in a transmission case.
In general, drive elements rotatably mounted in a transmission case—only one example being the pulley set of continuously variable transmission in a motor vehicle, with a hydraulically adjustable loose pulley which can be axially moved relative to the fixed pulley—are transmitted by way of channels in the shaft which bears the drive element by a coaxially configured element which is connected to the hydraulic control. In particular, when several separate channels are necessary for hydraulic control, this results in a significant production engineering effort and a considerable weakening of the indicated shaft due to the required shaft bores.
The object of the invention is to propose a device of the generic type which enables reliable hydraulic supply of a drive element without shaft holes.
The drive element of the invention is nonrotatably connected to the other element and that the contact connection is at least one unthreaded conduit which is inserted tightly into the two channels and which extends directly from the element to the drive element. At least one unthreaded conduit turns with the element which supplies the hydraulic medium; shaft bores can accordingly be omitted. Furthermore, at least one unthreaded conduit forms a connection which to a limited degree allows universal movements and axial compensation between the drive element and the other element; this results in supply of the hydraulic medium to the drive element which is reliable even with unfavorable tolerance pairings and operating conditions. (temperature, load) or axial slip. Another major advantage is that if necessary the supplying element can be a component of the transmission which also performs other functions (for example, routing the hydraulic medium through a coaxially adjacent gear which turns with the drive element).
At least one unthreaded conduit can extend radially within a roller bearing which is provided between the drive element and the adjacently located element. This makes possible supply of the drive element by way of at least one unthreaded conduit even if support is indicated between the drive element and the other element for transmission engineering purposes.
Preferably the inner ring of the roller bearing can sit on the neck of the drive element and at least one unthreaded conduit can run in a corresponding recess of the neck. The unthreaded conduit can thus be partially integrated into the drive element without added construction effort and space consumption.
Simple axial locking is achieved by the unthreaded conduit being provided with a radial projection by means of which it is held on the front between the inner ring of the roller bearing and the following drive element.
Furthermore, for easy installation of the transmission element the unthreaded conduit on the two ends can bear gaskets for sealing with the adjoining channels in the drive element and the other element. This makes it possible to easily assemble the transmission elements and enables routing of the hydraulic medium which is insensitive to vibrations and which is guided hermetically sealed even in the event of limited universal and axial relative movements.
Especially preferably provision can be made for several unthreaded conduits which are distributed over the periphery of the drive element and which correspond to the appropriate channels in the drive element and in the other element. Either at the same time larger hydraulic amounts or with separate channels different hydraulic functions can be controlled by way of the unthreaded conduits.
Furthermore, the annular hydraulic chamber can be supplied using an actuating piston for movement of the drive element by way of the channels and unthreaded conduits. By using unthreaded conduits, in addition to the aforementioned advantages, channel routing within the drive element can also be simplified, because the unthreaded conduits if necessary enable direct supply of the hydraulic medium to the annular hydraulic chamber.
Advantageously there can be spline-teeth as the nonrotatable connection between the drive element and the other element; they are configured as an unthreaded connection radially within the roller bearing on the neck of the drive element and on the annular projection of the other element. This makes possible a structurally favorable and compact transmission design which moreover yields further simplification of assembly and axial tolerance compensation.
Finally, in one preferred application of the invention the drive element can be a driven pulley set of a continuously variable transmission for motor vehicles and the other element can be the differential gear case of a torsen differential, also known as a worm gear differential, the output to the axle of the motor vehicle extending through the hollow shaft of the pulley set and the transmission ratio of the pulley set to the looping means being controllable by way of channels and the unthreaded conduits. The concept of a torsen differential is known in mechanical engineering and especially in transmission engineering.


A sample immersion probe is disclosed which has an ATR (attenuated total reflectance) element at its tip. The ATR is so shaped that radiation exiting the probe will travel in paths parallel to radiation entering the probe. The angles of incidence of radiation on the ATR surface (or surfaces) which permit partial absorption by the sample material are greater than 45.degree.. At least one of the ATR surfaces in contact with the sample has a fully reflecting coating which prevents radiation absorption by the sample at that location. The ATR shape may be symmetrical or non-symmetrical with respect to the axis of symmetry of the probe. The radiation entering the probe may be in a separate light guide (i.e., path) from the radiation exiting the probe; or the entering and exiting radiation may be in the same light guide (path).

This invention relates to the use of attenuated total reflectance (ATR) elements (e.g., probes) which provide spectral analysis of liquid samples. It relates particularly to the spectral analysis of liquids which require higher than usual angles of incidence of the rays which are reflected inside the ATR probes, and are subject to partial absorption by the sample.
Attenuated total reflectance is a widely used technique for spectrally analyzing liquids having absorptions which are too strong for convenient transmission analysis. This condition is commonly encountered in the infrared (IR) region of the spectrum--the spectral region which includes the fundamental frequencies or most molecular vibrations. The ATR has also found some use in the ultra-violet (UV) and visible regions, as in the analysis of dyes and other strongly absorbing substances which are soluble in water.
Over the years, a large number of ATR devices have been developed--including several by the present inventor. ATR probes generally fall into two categories: those employing cylindrical ATR rods (see FIG. 2 of U.S. Pat. No. 5,051,551), and those employing conical elements (see FIG. 8 of the same patent).
Both of these figures show optical rays which strike the interface between the ATR element and the analyte (sample) at an incidence angle of 45 degrees. The incidence angle is defined as the angle between the ray direction and the normal to the surface. A 45 degree incidence angle is often convenient. That angle is usually appropriate for the analysis of organics in the IR region. For the high index ATR materials available for use in the IR region, it is sufficiently above the critical angle to avoid significant data distortion.
The critical angle is defined as the smallest incidence angle for which an optical ray, in the absence of absorption, will be totally reflected at the interface. It is equal to EQU .phi..sub.c =sin.sup.-1 (n.sub.1 /n.sub.2)
where n.sub.1 and n.sub.2 represent the indices of refraction of the analyte and the ATR element, respectively. Typical organic materials have refractive indices around 1.5, while several common infrared ATR materials have indices equal to 2.4 or higher. For this particular combination, the critical angle is equal to 38.7.degree.. The 45.degree. angle often used is well beyond this.
For some applications, it is desirable-or even necessary-to use an incident angle larger than 45.degree.. This can occur, even when using a relatively high index ATR material, if the analyte is very strongly absorbing, or has an especially high refractive index. In other cases, the use of a high index ATR material may be precluded by such considerations as vulnerability to chemical attack, or required spectral region for the analysis. For example, in the higher frequency portion of the IR region, both sapphire (n=1.8) and cubic zirconia (n-2.0) provide good chemical resistance and high optical transmission. But their relatively low indices necessitate the use of incidence angles greater than 45.degree.. With the rod type ATR probe, this can be accomplished by altering the included angle of the rod end cones and/or the angle of the metallic reflecting cones. However, with the conical element ATR probe design, the situation isn't as simple.
Conical element ATR probes have a distinct advantage over the rod design for many industrial applications, in that they provide much higher transmission for a given probe diameter. However, since the ATR element also functions as a retroreflector, it is not possible to change the cone angle at will. One solution for this problem is to use more than two reflections. Examples corresponding to three and four reflections are shown in FIGS. 1 and 2. Three reflections with equal incidence angles will provide an incidence angle of 60.degree. (see FIG. 1), while four reflections will result in 67.5.degree. (see FIG. 2). A disadvantage of this approach is that, for a given incident beam diameter, the required probe diameter increases rapidly as the number of reflections increases.
Three reflection probes employing sapphire elements have been used for the UV and visible analysis of water solutions of strongly absorbing substances such as dyes. Since water has a low index (n=1.33), the critical angle is well below 60.degree.: EQU .phi..sub.c =sin.sup.-1 (1.33/1.8)=47.6.degree.
The difficulty arises when one attempts to use these same probes to analyze organic materials, many of which have very strong absorbances in the UV spectral region. Such materials often have average refractive indices around 1.5. With an ATR element having an index of 1.8, the critical angle will be 56.4.degree.. While this is still below 60.degree., it is close enough to give rise to significant band distortion, especially when one takes into account the range of angles which characterize a typical incoherent optical beam. But this isn't the whole story. Rather than remaining fixed at its average value, the refractive index of a substance departs substantially from this value in the vicinity of a strong absorption band. This situation is illustrated by FIGS. 3a, 3b, and 3c. Since the index is elevated on the longer wavelength side of the band, the critical angle will be higher and the penetration depth greater. The result will be a skewing of the measured band (see FIG. 3c). The only solution to this problem is a further increase in incidence angle.
As noted earlier, one solution to the above problem would be to use a four reflection ATR element as shown in FIG. 2. However, this would substantially increase the required probe diameter for a given input beam area. It would also increase the travel distance of the beam in the element, giving rise to greater signal loss due to beam spread (vignetting) and possibly bulk absorption.

Attenuated total reflecance probe employing large incidence angles


A hypodermic appliance for facilitating a one-handed uncapping and recapping of hypodermic apparatus and the like. An appliance separate from the hypodermic apparatus includes an elongated tapered opening in a plate through which a needle-covering sheath of a hypodermic apparatus is placed. The tip of the sheath abuts a tip holder which provides a fulcrum point for rocking the hypodermic apparatus from the wider portion of the opening to the narrower portion of the opening and vice-versa. The sides of the sheath are gripped in the narrower portion of the opening, whereupon the needle may be withdrawn from the sheath leaving the sheath lodged in the appliance. After using the hypodermic apparatus, the needle is reinserted by the use of only one hand into the sheath, and then the capped hypodermic apparatus is rocked to the wider portion of the opening and withdrawn from the appliance.

This invention relates to medical appliances, and in particular to a device for use in conjunction with hypodermic apparatus, or the like, in which a needle is covered by a sheath for the purposes of safety and sterility when the needle is not in use, the invention being an appliance, separate from the hypodermic apparatus, which assists the medical professional in one-handedly removing the sheath from the needle and, after using the hypodermic apparatus, one-handedly replacing the needle into the sheath.
In the past it has been the practice of medical professionals to use hypodermic apparatus such as syringes, I.V.'s, and the like which have a sharp hollow needle for penetrating the skin. In recent times it has become the practice in countries with advanced medical facilities to use disposable hypodermic apparatus. For the purpose of sterility the needles of such apparatus are supplied with a removable cap or sheath. The sheath is most commonly an elongated plastic part having a cavity for receiving the needle in a mouth thereof, and being attachable to the body of the hypodermic needle assembly by friction. The needle is withdrawn from the sheath just prior to the use of the hypodermic apparatus.
More recently, it has become advisable to replace the needle into the sheath after it has been used in order to help prevent needle-stick injuries which can transmit disease to any person other than the original patient. It is the practice in most medical institutions to dispose of sharp instruments into a special container where they cannot easily inflict injury to others. However, as an added precaution it is becoming a wise policy to make sure that the hypodermic needles are reinserted into their sheaths immediately after each use so that there is a substantially decreased possibility that a needle-stick injury might occur. This is a primary concern of medical workers and their employers because of the seriousness of diseases which can be transferred accidently in this manner.
New hypodermic apparatus are being developed in which the needle is not exposed or becomes automatically covered upon withdrawing the needle from the patient. However, these devices are not readily available to the medical community, are more complex in structure, cost more to manufacture, and are prone to malfunction. Unless and until such devices become universally used the problem of potential needle-stick injuries remains.
Also, there have been developed some devices which allow medical professionals to recap the hypodermic needle with the sheath after use. However, these devices generally require the use of both hands. This is unacceptable to the medical community because of the possibility of sticking the needle into the other hand when trying to recap it.
Some devices which do not require the use of both hands have been developed. However, those devices of which the applicant is aware are fairly complex and costly. Moreover, they are generally designed to be sat upon a table and as such are not readily positioned where they are most convenient for use. Another drawback to known devices is that they are not readily able to be sterilized.
Accordingly, it is the object of the present invention to provide an accessory or appliance, separate from the hypodermic apparatus, to assist medical professionals in one-handedly uncapping and recapping hypodermic apparatus.
Another object is to provide such an appliance which is simple to manufacture, and of relatively low cost, and yet is easily useable and can be readily available near the patient.
A further object is to provide an appliance which is readily replaceable and/or which can be sterilized.
These and other objects and advantages of the present invention and the manner in which they are achieved will become apparent in the following specification and claims.

Hypodermic uncapping and recapping appliance and method


The invention provides methods of using photoactivated hypericin compounds which, when photoactivated using visible or UV-A light, are useful for treating numerous diseases and disorders in mammals. The compounds of the invention are useful for inhibiting the proliferation and accumulation of mammalian leukocytes and for inducing apoptosis in mammalian leukocytes.

Recently, increasing attention has been devoted to photodynamic therapy (PDT) because of the discovery that many photosensitizer compounds, either naturally occurring or synthesized, exhibit remarkable anti-cancer and antiviral activities (Diwu et al., 1994, Pharmacol. Ther. 63:1-35).
Several studies have shown that benign hyperproliferative and hypervascular conditions such as psoriasis can be improved by photosensitization with porphyrins (Levy, 1994, Sem. Oncol. 21(6 Suppl. 15):4-10). Selective sensitization of psoriatic tissue using porphyrins has been demonstrated as an effective treatment for psoriasis and the efficacy of the treatment method may be related to the increased vascularity of psoriatic plaques (Stringer et al., 1996, J. Invest. Dermatol. 107:76-81). Another report using systemic tin-protoporphyrin in combination with long wavelength ultraviolet light suggests that this combination effects amelioration of psoriasis in psoriatic patients (Calzavara-Pinton et al., 1996, J. Photochem. Photobiol. B-Biol. 36:225-231).
One of the most commonly used regimens for the treatment of psoriasis, i.e. psoralen-ultraviolet A light (PUVA) treatment, is a form of PDT. PUVA treatment involves the administration to a patient of a psoralen compound, followed by illumination of the skin of the patient with light having a wavelength corresponding to ultraviolet A (UV-A) radiation. Although PUVA treatment provides relief from psoriasis, exposure of skin to UV-A radiation can have a number of undesirable effects, including a sunburn-like reaction and induction of skin tumors (Stern et al., 1997, New Eng. J. Med. 336:1090-1091).
Apart from the undesirable effects of UV radiation, psoralen, other furocoumarins such as 8-methoxypsoralen (8-MOP), and other types of photosensitizing agents such as hematoporphyrin derivatives, also have various disadvantages, including mutagenicity resulting from the ability of the compounds to intercalate into DNA, and toxicity of the compounds in patients.
Hypericin is a naturally occurring compound which is found in plants of the genus Hypericum, in insects of the genus Coccoidea, and in the ciliated protozoan Stentor coeruleus. Hypericin has been demonstrated to possess virucidal and antiviral activities (Lavie et al., 1989, Proc. Natl. Acad. Sci. U.S.A. 86:5963-5967; U.S. Pat. No. 4,898,891; U.S. Pat. No. 5,514,714; U.S. Pat. No. 5,506,271), and anti-tumor activities (Couldwell et al., 1994, Neurosurg. 35:705-710 [erratum appears in 1994, Neurosurgery 35:993]; Hamilton et al., 1996, J. Neurosurg. 85:329-334; Jarvis et al., 1994, Canc. Res. 54:1707-1714; Vandenbogaerde et al., 1996, Anticanc. Res. 16:1619-1625; Zhang et al., 1995, Canc. Lett. 96:31-35; Zhang et al., 1996, Neurosurg. 38:587-591).
Hypericin is maximally activated by visible light at wavelengths produced by a sodium lamp (590 nm) or cool white fluorescent light which significantly reduces the side effects associated with UV irradiation and permits deeper skin penetration. Hypericin has a relatively long half life (20-24 hours) which permits repeated light activation with single doses. This compound has been demonstrated in skin after systemic administration and it has been shown to be about 20% bioavailable following oral administration.
The photodynamic properties of hypericin have been described (Pace et al., 1941, J. Chem. Soc. 63:2570-2574)). Upon visible or UV light irradiation, hypericin in solution is capable of exciting oxygen to its singlet state and generating superoxide radicals, which can lead to oxidation of tryptophan imidazole groups in proteins, to oxidation of fatty acids in biological systems, or to other chemical reactions. Hypericin is maximally activated by light of about 570-650 nm wavelength, i.e. in the yellow region of the electromagnetic spectrum. Although hypericin has been known for many years, and although the application of non-photoactivated hypericin has been investigated in clinical studies of its anti-cancer and antiviral activities, very little is known about the mechanism of action of this compound at the biochemical or molecular level (Agostinis et al., 1995, Biochem. Pharmacol. 49:1615-1622). Photoreaction of hypericin has been demonstrated to produce singlet oxygen. In addition, there is evidence that hypericin inhibits protein kinase activity and thus, may exert its biological activity through pathways which are very different from, for example, psoralen (Song et al., 1979, J. Photochem. Photobiol. 29:1177-1197; Agostinis et al., 1995, Biochem. Pharmacol. 49:1615-1622). Furthermore, hypericin binds to phospholipids, such as cell membranes comprising phosphatidylcholine, and to retroviral particles, probably by associating with the lipid envelope thereof.
Photoactivation of hypericin prior to treatment therewith of an enveloped virus served to reduce the infectious titer of the enveloped virus, but did not inactivate the virus (Meruelo et al., U.S. Pat. No. 5,506,271). Exposure of hypericin to light has also been demonstrated to only slightly enhance hypericin's antiproliferative effects on glioma cells in vitro (Anker et al., 1994, Drugs Future 20:511-517). Hypericin has been reported to be incapable of inhibiting proliferation of leukemia cells (Jarvis et al., 1994, Canc. Res. 54:1707-1714). However, local illumination of the skin covering subcutaneously xenografted carcinoma cells in a nude mouse following intraperitoneal administration of hypericin to the mouse inhibited proliferation of these carcinoma cells (Vandenbogaerde et al., 1996, Anticanc. Res. 16:1619-1626). Lavie et al. (1995, Transfusion 35:392-400) demonstrated that photoactivated hypericin could be used to inactivate viruses in blood compositions in vitro, but reported no effect of hypericin on leukocytes. U.S. Pat. No. 5,514,714 (Meruelo et al.) discloses that administration of hypericin to a mammal can be effective to treat T-cell-mediated disorders. This reference did not investigate the use of photoactivated hypericin.
A long-felt need exists for photosensitizing agents which may be used to treat patients having a disorder, wherein the agent may be activated by non-UV light and wherein the combination of active agent and light is free of the deleterious side effects of known photosensitizing agents and UV light combinations.

Photoactivated hypericin and the use thereof

The Trustees of the University of Pennsylvania