The invention provides fluorescence-based assays for determining the phosphorylating or the dephosphorylating activity of an enzyme acting on a substrate molecule. The substrate comprises at least one moiety that is capable of being phosphorylated or dephosphorylated by an enzyme to yield a product, the substrate being labelled with a fluorescent dye, and which is capable of exhibiting change in fluorescence intensity and fluorescence lifetime upon phosphorylation of the dye-labelled substrate or upon dephosphorylation of the dye-labelled phosphorylated substrate. In preferred embodiments, the substrate is labelled with a fluorescent dye selected from the acridone and the quinacridone classes of dyes. Also provided is a method is provided for screening for a test agent whose effect on the phosphorylating or dephosphorylating activity of an enzyme is to be determined.

The present invention relates to fluorescence-based assays for measuring protein kinase and phosphatase activity.
Phosphorylation and dephosphorylation of proteins, catalysed respectively by protein kinases and protein phosphatases, are key intracellular processes that regulate cellular functions in eukaryotic cells. The reversible phosphorylation of serine, threonine and tyrosine residues in proteins is a highly effective means for regulating the biological properties of proteins so as to modulate such diverse processes as metabolism, cell division, transcription and translation of genes, and signal transduction mechanisms in cells. For reviews, see Hunter, T., Cell, (1995), 80, 225–236; Karin, M., Curr. Opin. Cell Biol., (1991), 3, 467–473. Thus, protein phosphorylation and dephosphorylation are significant events in an organism's maintenance, adaptation, and susceptibility to disease. Dysfunction in protein phosphorylation and dephosphorylation processes can have serious consequences for cellular regulatory mechanisms and for this reason, protein kinases and phosphatases are suitable targets for the development of high throughput screening assays of importance in the development of new therapeutic drug treatments.
Conventional assays for the detection and measurement of kinase activity include those based on radioactive detection methods using [32P]- or [33P]- labelled ATP as a phosphate source for incorporation of phosphate into a target substrate. Methods employing radioactive isotopes typically rely on a separation step to isolate the labelled product, prior to counting in a scintillation counter (Songyang, Z. et al, Nature, (1995), 373, 536–539).
Alternatively, assays involving non-radioactive detection have been employed, for example utilising antibodies to detect phosphorylated proteins and peptides. Detection modalities include fluorescence polarisation and time resolved fluorescence resonance energy transfer.
WO 99/29894 (Epps et al) relates to high throughput screening assays for protein kinases and phosphatases employing fluorescence detection. The methods utilize a competitive immunoassay procedure to determine the amount of substrate that is phosphorylated (or dephosphorylated) by the enzyme. Determination of enzyme activity is achieved by measuring fluorescence polarisation of a labelled antibody-product conjugate. Alternatively, fluorescence quenching or fluorescence correlation spectroscopy may be used.
WO 00/75167 (Sportsman et al) relates to methods for detecting the addition or removal of a phosphate group to or from a substrate by contacting a luminescent peptide with a binding partner that specifically binds to a phosphorylated peptide.
An alternative fluorescent assay method for protein kinase C (PKC) without antibody selection has been reported by Il et al (Analytical Biochemistry, (1991), 195, 148–152). In this assay, an acrylodan-labelled 25-amino acid synthetic peptide incorporating a PKC phosphorylation site is reported to undergo a 20% fluorescence decrease upon phosphorylation. The assay allows detection of PKC to a level of 0.2 nM, while similar concentrations of cyclic AMP-dependent or type II calmodulin dependent protein kinases produced no change in peptide fluorescence. JP 2001–19700-A discloses the use of a fluorogenic substrate for detecting cAMP dependent protein kinase A activity or protein dephosphorylation activity by measuring changes in fluorescence intensity.
In those assays that employ time resolved fluorescence resonance energy transfer (TR-FRET), more than one detection reagent is required. The preparation and addition of such reagents often requires considerable time, effort and expense. Many of the assays are not truly homogeneous in that they require addition of reagents after the reaction has been initiated. The dependence of TR-FRET on the distance between the detection reagents means that substrates must be engineered to meet that need. Furthermore, many of the assays will require multiple labels. It is not possible in most cases to use the natural substrate, even if desired, because the need to biotinylate proteins and add antibodies precludes their use.

Methods for measuring protein kinase and phosphatase activity


A method of construction a prestressed cable-stay bridge is provided. The method includes the constructing at least a tower having a pier, a pair of masts and a girder between the masts for securing a deck, a main beam supported on the deck along a longitudinal direction of the bridge, a pair of sub-beams connect to two ends of the main beam and suspended from a plurality of temporal stay cables from the top of the masts, an upper portion and a plurality of segment secured on the top of the main beam and the sub-beam after the performance of on the spot prestressing procedure, a plurality of side reinforcements secured to the elongate gaps at two lateral side of the bridge, a plurality of permanent stay cables instead of the temporal stay cables for suspending the bridge from the inner side of the masts and a roadway paved on the top of the bridge. This disclosure further includes a plurality of safety plates provide along the lateral sides of the bridge to ensure a safe and convenient working condition to the working personnel.

The present invention relates to construction of a cable-stay bridge and more particularly to a method of construction a prestressed cable-stay bridge with on the spot stressing of steel beams and concrete or asphalt slab which method tends to rapidly span the beams from one tower to another and to provide a safety working system for the spot stressing of the steel beams.
In the art, there are about two methods of constructing cable-stay bridges, One method is sequentially casting short segments in place. The other method is to lift short precast segments in place. Both methods are greatly consuming the time and labor and both methods are not safe for the working personnel because they are working at a high elevation without any guard device. Besides, each of the segments is suspended from the main tower by a skew cable. So that the top of the main tower should bear greatly the heavy load of the segments, thus the designer has to strengthen the structure of the tower and sacrifice its external nicety. Another method of constructing a cable-stayed bridge adapts a horizontally extending struss including an air filled tanks to aid in construction of the bridge over a body of water. When the struss is spanning from a first tower for example, to a second tower, it is supported by the tanks on the water and enables the struss to move further forward to be projected from the second tower to a third tower. A plurality of stay cables are then strung from a top of the second tower to a series of temporary connections to the struss before a deck portion is constructed on the struss. After the deck portion is finished and suspended from a set of permanent stay cables, the struss is then moved still further forward beyond the third tower for constructing additional deck portions. This type of construction a cable-stayed bridge is more safe than the above discussed methods. But it consumes more time and material.
The present invention is arisen to obviate and/or militate the disadvantages discussed the above for the prior art and provides a more safe and faster procedure to construct a cable-stayed bridge.

Safety method of construction a prestressed cable-stay bridge

Dept. of Military Engr. Chinese Military Academy 830 R.O.C.


A backlight apparatus includes a plurality of support members that maintain a diffuser plate in a fixed and level position with respect to the lamps and the housing that contains the lamps, to produce uniform illumination. The support members extend from the diffuser plate disposed at an open face of the housing, to the opposed back part of the housing, and include male-female interlocking parts to provide support. The support members include a set of cooperating portions, an upper and lower portion. The upper and lower portions may combine to provide a cavity in the support member. A cold cathode fluorescent lamp may extend through the cavity and the upper and lower portions may be secured to the diffuser plate and housing, respectively, by extending through openings formed in the diffuser plate or housing.

Liquid crystal displays (LCD's) used in televisions, computers, and other video display devices produce predetermined images and control light transmission to produce video displays. LCD's are particularly suited for flat panel displays because of their superiority in resolution, color image display and image quality. LCD's do not emit light themselves and therefore utilize backlight devices behind the LCD panel to produce a visible video display. Cold cathode fluorescent lamps (CCFL's) have been used for various illumination purposes and are particularly suited for use as a backlight apparatus in conjunction with liquid crystal displays such as TFT-LCD's (thin film transistor-liquid crystal displays) in televisions, computers, and other video display technologies. The performance and quality of the video display is optimized when the illumination is sufficient and uniform throughout the display. Non-uniform illumination degrades the quality of the displayed image. Technological advances in the video display industry enable the reliable production of increasingly large video displays and as video display devices become larger, it becomes increasingly more challenging and important to provide a uniformly illuminated display device.
LCD panels used in televisions and other video display devices, typically utilize a CCFL backlight apparatus that consists of a housing that contains numerous elongated tubes of cold cathode fluorescent lamps and includes reflective internal surfaces. The housing typically includes a generally flat, reflective back portion and an open face that faces the LCD, but the housing is generally separated from the LCD by several layers of material that condition the light as it travels from the CCFL backlight apparatus to the liquid crystal display. For example, a diffuser plate and one or more multilevel diffusers may be present between the backlight apparatus and the liquid crystal display. Additionally, one or more prism sheets may be included between the diffusers if more than one diffuser is used. A deformation of the diffuser plate, the diffusers, or the prism sheets can result in non-uniform illumination provided to the LCD array and therefore an video image of inferior quality is seen by the viewer. When the CCFL backlight apparatus is of considerable size and a correspondingly sized diffuser plate is disposed against or in close proximity to the open face of the backlight apparatus housing, a common problem is for the diffuser plate to sag or deform so that it is not level with respect to the backlight apparatus. This produces an undesirable non-uniformity of illumination.
It would therefore be desirable to provide a backlight apparatus that delivers uniform illumination to a display device regardless of the size of the display device. In particular, it would be desirable to support the diffuser plate at a level orientation with respect to the backlight device.


A sense amplifier increases the differential voltage between a reference signal and a sense signal by using a current mirror to control the generation of the reference signal and the sense signal responsive to a common control signal. The sense amplifier includes a reference signal generator for generating the reference signal at a reference node responsive to a reference cell, a sense signal generator for generating the sense signal at a sense node responsive to the state of a memory cell, and a differential amplifier for amplifying the voltage difference between the reference signal and the sense signal. The reference node is coupled to the reference cell which discharges current from the reference node, and the sense node is coupled to the memory cell which discharges current from the sense node. The reference signal generator includes a first current source transistor that is coupled between a power supply terminal and the reference node. The sense signal generator includes a second current source transistor coupled between the power supply terminal and the sense node. The control terminals of the first and second transistors are coupled together to receive the common control signal from either the reference node or the sense node. In either configuration, the control terminal of one of the current source transistor is decoupled from its respective node to allow the voltage of the node to vary widely with respect to the other node.

1. Field of the Invention
This invention relates generally to sense amplifiers for semiconductor memory devices, and more particularly to a sense amplifier that employs a current mirror to increase the voltage differential between a reference signal and a sense signal.
2. Description of the Related Art
To increase the integration level of semiconductor memory devices, the size of individual memory cells must be decreased. Such a reduction in memory cell size inevitably results in a reduction in memory cell current. For semiconductor memory devices intended for use in portable electronic equipment which operates at low voltages, the memory cell current required for sensing data is reduced even further because the devices operate at very low voltages.
However, when the current through a semiconductor memory cell is decreased, the speed of a sense amplifier which is used to sense the state of the memory cell decreases in proportion to the decrease in the memory cell current. As a result, the operating speed of the semiconductor memory device is reduced.
A sense amplifier senses and amplifies the voltage difference between an input sense signal, which has a voltage that is determined by the cell current flowing through a memory cell, and a reference signal, which has a voltage that is determined by a reference current which is typically generated by a reference cell.
The speed of a sense amplifier can be increased by increasing the voltage difference between the sense signal and the reference signal. In the case of existing semiconductor memory devices, however, the difference between the sense voltage and the reference voltage is typically small because the devices are operated at low voltages. Many efforts have been made to increase the voltage difference between the sense voltage and reference voltage so as to increase the operating speed of the memory device.
FIG. 1 is a schematic diagram of a prior art sense amplifier. The sense amplifier of FIG. 1 includes a sense voltage signal generator 200 for generating a sense voltage signal at sense node N20 in response to the state of a memory cell. A reference signal generator 100 generates a reference voltage signal at reference node N2. The sensing amplifier also includes a differential amplifier 300 for amplifying the voltage difference between the sense signal and the reference signal.
The reference signal generator 100 includes an inverter comprised of PMOS transistor 101 and NMOS transistor 102 for inverting a control signal/SA. An NMOS transistor 106 has a channel connected in series between a node N1 and power supply ground terminal. The NMOS transistor 106 also has a gate connected to a node N3. The reference signal generator 100 further includes another NMOS transistor 103 having a channel coupled between a power supply terminal and a node N2, and a gate the controls the transistor in response to a pre-charge signal .O slashed.PRE. A PMOS transistor 104 has a channel connected in series between the power supply terminal and node N2. The PMOS transistor 104 also has a gate connected to node N2. Another NMOS transistor 105 has a channel connected in series between the nodes N2 and N3. The NMOS transistor 105 has a gate to which the voltage at the node N1 is applied. The inverter includes a PMOS transistor 101 and an NMOS transistor 102 having channels connected in series between the power supply terminal and the power supply ground terminal. The PMOS transistor 101 and NMOS transistor 102 receive the sense amplifier control signal/AS at their common gate and are driven in response to the control signal.
The sense voltage signal generator 200 has the same configuration as the reference voltage signal generator 100. Specifically, the sensing voltage signal generator 200 includes PMOS transistors 201 and 204 which correspond PMOS transistors 101 and 104, respectively, and NMOS transistors 202, 203, 205 and 206 which correspond to NMOS transistors 102, 103, 105 and 106, respectively, and nodes N10, N20 and N30 which corresponds nodes N1, N2 and N3, respectively.
In operation, when the sense amplifier control signal/SA is switched from the high logic level to the low logic level, PMOS transistor 101 is activated and NMOS transistor 102 is deactivated. This causes the voltage at node N1 to increase to high level. The precharge control signal .O slashed.PRE is switched from low to high simultaneously with the high to low transition of the sense amplifier control signal/SA. This activates NMOS transistor 103, thereby causing the voltage at node N2 to rise.
When the voltages at nodes N1 and N2 increase, current flows from node N2 to N3 by virtue of the activation of NMOS transistor 105. As a result, capacitor C1 is charged, thereby causing the voltage at node N3 to rise. This in turn causes the voltage at the gate of NMOS transistor 106 to rise. The voltage at node N1 is then fixed at a level at which the current supply capability of PMOS transistor 101 is balanced with the current discharge capability of NMOS transistor 106.
After the voltage at node N1 is stabilized at a fixed level, the precharge control signal .O slashed.PRE is deactivated, i.e., switched from high to low, and NMOS transistor 103 stops supply current to node N2. Under this condition, current supply transistor 104 is the only transistor that supplies current to node N2. Since current is discharged from node N2 by a reference current supply source 107 in this state, the voltage at node N2 is determined by the difference between the amount of current supplied by PMOS transistor 104 and the amount of current discharged by the reference current supply 107. This voltage is applied to one input terminal of the differential amplifier 300 as a reference voltage signal. Thus, the reference signal is generated at node N2 by the current source 104 in response to the current demanded by reference current supply source 107.
Since the sense voltage signal generating unit 200 has essentially the same configuration as the reference voltage signal generator 100, the operation is essentially the same except that, when the signal .O slashed.PRE is activated, the voltage at sense node N20 is determined by the difference between the amount of current supplied by PMOS current supply transistor 204 and the amount of current discharged by the memory cell current supply source 207. This voltage is applied to the other input terminal of the differential amplifier 300 as the sense voltage signal.
The reference current supplied by the reference cell current supply source 107 is fixed at about one half of the current flowing through a cell which is in the ON state. Accordingly, the voltage of the reference signal at node N2 is maintained at a voltage midway between the voltage generated by reading a cell in the ON state and a cell in the OFF state.
The operation of the sense amplifier of FIG. 1 will now be described in more detail with reference to FIG. 2 which shows variations in the voltages at the references node N2 and the sense node N20. The PMOS current supply transistor 104 of reference signal generator 100 is diode connected in a feedback configuration in which its gate is connected to its drain at node N2. In this configuration it serves as a current supply source for current which is discharged from node N2 by the reference cell current supply source 107. Similarly, PMOS current supply transistor 204 of the sense signal generator 200 is diode connected in a feedback configuration in which its gate is connected to its drain at the sense node N20 from which the memory cell current supply source 207 discharges current.
When the current supply transistors 102 and 104 are diode connected in feedback configurations, the sense amplifier operates as follows during a read operation.
When the memory cell is in an OFF state, PMOS transistor 204 continuously supplies current to the sense node N20. This causes the voltage at node N20 to increase rapidly because the memory cell current source 207 does not discharge any current from node N20 when it is in the OFF state. However, when the voltage at node N20 rises to a certain level, PMOS transistor 204 switches off due to the voltage on its gate. Thus, the voltage at node N20 is limited before a sense operation begins. On the other hand, when the memory cell is in the ON state, the voltage at node N20 decreases rapidly. However, when the voltage at node N20 decreases to a certain level, PMOS transistor 204 switches on, thereby limiting the level to which the voltage at node N20 can drop.
Thus, when the current source transistors 104 and 204 in the reference signal generator and sense signal generator are diode connected in a feedback configuration, the differential voltage between the reference node N2 and the sense node N20 is limited by the feedback operation of transistors 104 and 204. However, the differential voltage between the reference node N2 and sense node N20 must be increased to increase the sensing speed and sensitivity of differential amplifier 300. Thus, the feedback connected transistors 102 and 104 limit the speed and sensitivity of the sense amplifier.


A recording and reproducing apparatus includes a recording circuit for forming predetermined memory units by correlating video information and audio information with retrieval information for retrieval of the video information and the audio information, and sequentially recording the predetermined memory units in a solid-state memory device at intervals of predetermined time, a file generating circuit for generating a retrieval information file for retrieving the video information and the audio information on the basis of the retrieval information, and a reproducing circuit for reading out the video information and the audio information from the solid-state memory device on the basis of information contained in the retrieval information file and reproducing a video signal and an audio signal from the solid-state memory device, during retrieval of information recorded in the solid-state memory device.

1. Field of the Invention
The present invention relates to a recording and reproducing apparatus for performing recording and reproduction of video information and audio information and, more particularly, to a recording and reproducing apparatus for retrieving and reproducing the video information and the audio information.
2. Description of the Related Art
Conventionally, to record or reproduce a moving-image signal, it has generally been to employ a so-called VTR (video tape recorder) which uses magnetic tape having a tape width of 1/2 inch or 8 mm as a recording medium.
In such a VTR, a rotary head provided on a rotary drum is used to record and reproduce video information for one field per track on and from magnetic tape wrapped around the rotary drum. In the VTR, retrieval of video information, i.e., cueing, is performed while actually reproducing recorded video information by utilizing functions using an index signal for cueing a video scene, such as "fast forward feed", "rewinding control" and "special reproduction".
However, if the retrieval is performed in the conventional VTR, since the video information is recorded on a tape-shaped recording medium, the time taken to transport tape is needed to retrieve desired video information, and the retrieval may occasionally require time-consuming and exhausting operations.
Also, during the retrieval operation, the rotary head is tracing the magnetic tape while repetitively making contact with the magnetic tape on which information is recorded. As a result, the magnetic tape may be abraded or scratched to adversely affect the reliability of the recorded information.
Another problem is that in the case of a VTR adopting a recording system based on an analog signal, if retrieved information is copied (duplicated) to another medium, a degradation of image quality due to so-called dubbing is caused.


A structure for preventing and controlling Arcing Across Thin Dielectric Film in sputtering and other process that generate electric fields and cause arcing across conductive structures. In an embodiment, an extraneous window or two extraneous windows are formed in a second dielectric layer under at least of a portion of a lead to that a xe2x80x9chot spotxe2x80x9d area is created where arcing is more likely to occur.

1. Field of the Invention
The present invention relates generally to the manufacture of vacuum-deposited thin-film structures and more particularly to the manufacture of thin-film magnetoresistive (MR) read sensors for magnetic information storage files.
2. Description of the Prior Art
Magnetic head disk drive systems have been widely accepted in the computer industry as a cost-effective form of data storage. In a magnetic disk drive system a magnetic recording medium, in the form of a disk, rotates at high speed. A magnetic read/write transducer, referred to as a magnetic head, is attached to or formed integrally with a xe2x80x9csliderxe2x80x9d. The slider flies over the rotating disk surface, in order to access the entire disk surface for information storage and retrieval. The slider and its integrally formed transducer are produced en mass in the form of a wafer. The bottom surface of the slider which is defined by cutting and grinding after the wafer process is called the airbearing surface (ABS).
A state-of-art magnetic head includes an inductive write-element and a magnetoresistive (MR) read-element. A MR read-element is also abbreviated as a MR-element. It further consists of a MR-stripe, whose resistance varies with the magnetic flux from the medium, and two magnetic shields, which help the MR-stripe to xe2x80x9cfocus-onxe2x80x9d a narrow stripe (approximately 100 nm wide) of the medium.
There are presently two types of MR-stripe, amorphous (AMR) and giant (GMR). Regardless of the type, a MR-stripe is located between two magnetic shields. Insulation is added between the MR-stripe and each shield to avoid shunting. In pursuit of high spatial resolution, the shield-to-shield spacing (which is also called the read-gap width) is presently as low as 150 nm. Less the thickness of MR-stripe, insulation on each side of the MR-stripe is as thin as 20 nm. Each insulation typically consists of a dielectric film such as aluminum oxide or silicon oxide. It is very vulnerable to accidental dielectric breakdown, during the manufacture and usage. The dielectric breakdown, commonly called arcing, causes shunting. It may also blow up the MR-stripe.
While it is difficult to prevent arcing through the insulation, it also takes much effort to create a desired electrical connection through the same insulation. Conventionally a layer of photoresist is applied on top of the insulation, then exposed through a dedicated mask. The photoresist and the insulation are chemically etched away in areas defined by the exposure, creating via-holes. The remaining photoresist is stripped away. Finally conductive material is deposited through the via-holes, establishing desired electrical connection. This process is viable, but nonetheless costs money and time.
Very often an electrical connection through the dielectric film does not require a precisely controlled conductivity. For example, it is desirable to connect the magnetic shields and the write-core to the ground-lead of the MR-stripe. The connection helps to prevent unintentional dielectric breakdown. It also helps to reduce the readback noise in an operating disk drive. See Schwarz and Keel (U.S. Pat. No. 4,800,454), Sato el al. (U.S. Pat. No. 4,802,043), Shibata and Suyama (U.S. Pat. No. 5,247,413), Shibata el al. (U.S. Pat. No. 5,272,582), and Denison et al. (U.S. Pat. No. 5,539,598). Electrical connections caused by arcing provide adequate conductivity for the above application. However such connections are never relied upon because arcing was considered uncontrollable.
The difficulty in preventing and utilizing arcing demonstrates the need for better understanding and control of arcing in wafer process. The present invention describes novel structures and methods useful for controlling arcing in wafer process.
It is an object of the present invention to provide a method/structure for fabricating a thin dielectric film free of defects caused by accidental arcing during wafer processing.
It is another object of the present invention to provide a cost-effective method/structure for reliably establishing a desired electrical connection between two conductive structures, through a thin dielectric film.
It is an object of the present invention to provide a method/structure for fabricating a magnetoresistive read-element with ultra-thin dielectric film in the read-gap, whereby improving the spatial resolution of said read-element.
It is another object of the present invention to provide a method/structure for fabricating a magnetoresistive read-element with ultra-thin dielectric film in the read-gap, free of defects caused by accidental arcing.
It is a further object of the present invention to provide a method/structure for fabricating a magnetic head having a write-element and a magnetoresistive read-element that is insensitive to the static noise.
It is yet another object of the present invention to provide a method/structure for fabricating a magnetic head having a write-element and a magnetoresistive read-element that is insensitive to accidental arcing and to the static noise, without the extra process of creating a dedicated via-hole.
The invention provides methods for preventing and controlling arcing across thin dielectric film in sputtering and other process that generate electric fields and cause arcing across conductive structures.
In a first embodiment, the wafer is subjected to a radio frequency electric field, the leads are oriented in a first direction which is perpendicular to the RF fields (in a second direction).
In a second embodiment, leads are shaped so that the MR stripe is close to the geometric center of the leads, thereby placing the MR-stripe at or near the node of standing wave, hence preventing arcing at the MR-Stripe.
In a third embodiment, an extraneous window is formed in a second dielectric layer under at least one end of a lead to that a xe2x80x9cweak spotxe2x80x9d coincides with an anti-node of the standing wave, hence promoting the occurrence of desired arching.
Additional objects and advantages of the invention will be set forth in the description that follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of instrumentalities and combinations particularly pointed out in the append claims.

MR lead structure for controlling arcing across thin dielectric film


A method for predicting vehicle operator destinations including receiving vehicle position data for a vehicle. The vehicle position data for a current trip is compared to vehicle position data for a previous trip to predict a destination for the vehicle. A path to the destination is suggested.

The present disclosure relates generally to the prediction of vehicle operator destinations and in particular, to a method of suggesting the likely path of a vehicle based on previous paths taken by the vehicle operator.
In recent years, navigation systems mounted in vehicles for displaying a map to vehicle operators have become more common. Most navigation systems include a device, such as a global positioning system (GPS) receiver, for determining the exact location of a vehicle. GPS refers to a collection of satellites owned by the United States Government that provide highly accurate, worldwide positioning and navigation information twenty-four hours per day. An increasing number of affordable GPS receivers are being manufactured for consumer as well as non-consumer use. GPS receivers are continuing to become less expensive, smaller in size and able to support more features. Many of the vehicle navigation systems that are currently being manufactured include GPS receivers.
A destination point for a vehicle is typically set in a navigation system by a vehicle operator or by a passenger using a remote control device or the like. The setting of the destination point can be based on items such as: the name of a town or region; a telephone number; or a pre-selected geographical point from a list of pre-registered geographical points. Current navigation systems require the use of a map to determine routes and to perform navigation functions. A typical navigation system includes a database or access to a database that contains streets and other geographical landmarks. These streets and other geographical landmarks are correlated to GPS coordinates received via a GPS receiver in order to determine the physical location of a vehicle in terms of map locations.
The ability to know that a vehicle operator will be taking a particular route, coupled with vehicle status information and environment data (e.g., traffic, weather) can be utilized to direct the vehicle operator to particular locations (e.g., next gas station) and/or to avoid particular locations (e.g., heavy traffic, bad weather). A disadvantage of using geographical landmarks and mapping software is that the database holding the maps can require a significant amount of storage space and the map becomes out of date as roads and landmarks change. Alternatively, a vehicle operator may subscribe to a central map database instead of having the map database located within the vehicle. This approach, of subscribing to a map database, can become costly due to wireless access fees and database fees.

Prediction of vehicle operator destinations


The invention relates to a level converter for converting a signal (in) comprising a first voltage level (Vint) and supplied to the level converter, to a signal (Out) including a second voltage level (Vsupply) differing from the first voltage level (Vint). The level converter includes an amplifier device. The level converter is additionally supplied with a signal obtained from the signal (in) and delayed for compensating for distortions contained in said signal (in).

With semiconductor devices, in particular with memory devices such as DRAMS (DRAM=Dynamic Random Access Memory or dynamic read-write memory, respectively), a voltage level used internally in the device may differ from an external voltage level used outside the device.
In particular, the internally used voltage level may be smaller than the externally used voltage level—for instance, the internally used voltage level may be 1.8 V, and the voltage level used externally may be 2.5 V.
The reason for this may, for instance, may be that the external voltage supply is subject to relatively strong fluctuations, and, therefore—in order that the device can be operated without fault—has to be converted, by a voltage regulator, to an internal voltage (that is subject to relatively minor fluctuations only and that is regulated at a particular, constant value).
By the use of voltage regulators, a loss of voltage may occur, which may result in the voltage level used internally in the device being smaller than the external voltage level.
An internal voltage level that is reduced vis-à-vis the externally used voltage level has the advantage of reducing power loss in the semiconductor device.
If a lower voltage level is used internally in the device than is used externally, the signals generated internally in the device typically—before being output outside—are conconverted to corresponding, higher-level signals by so-called level converters.
Such level converters may, for instance, an amplifier circuit that includes cross-coupled p- or n-channel field effect transistors.
By using the amplifier circuit, internal, low-level signals generated in the device can leave afflicted with certain delay times—be converted to corresponding higher-level signals.
However, the delay time occurring with a positive edge of an internal signal may differ from the delay time occurring with a negative edge of the internal signal. The result thereof is that the higher-level signals output by the amplifier circuit are distorted.
To compensate for this effect, the signals output by the amplifier circuit may be supplied to a driver stage comprising a plurality of, e.g. two, inverters connected in series.
The inverters are designed such that a compensation of the distortions contained in the signals output by the amplifier circuit is achieved.
The driver stage does, however, result in a relatively high-additional—signal delay; furthermore, the above-mentioned signal distortions may, for instance due to changes in the characteristics of the level converter devices caused by temperature fluctuations, in general be compensated for only incompletely by a level converter of the above-described type.


Disclosed is an electron beam evaporator for installation in a vacuum apparatus which provides for variable positioning during or between applications of a coating. The apparatus has a carrier plate which is a flat hollow body, the top cover plate of which supports the evaporator. The hollow body is disposed over the bore in the tank such that it can be turned about the main axis of the bore. The component assemblies of the electron beam evaporator are vacuum-tight on the cover plate and the connecting lines are carried through the interior of the hollow body to the component assemblies.

The invention relates to an electron-beam evaporator for vacuum coating apparatus as used, for example, in optics for tempering lenses or eyeglass lenses. For this purpose the substrates to be coated are moved on an appropriate substrate holder over the vapor source heated by the electron beam, and are thus coated. The evaporation point from which the vapor is released is usually off-center from the main axis of rotation of the substrate holder.
The multiplicity of different substrate shapes and surface curvatures call for special efforts to achieve the desired coating thickness tolerances and coating thickness distribution within a batch on the substrate holder in the vapor coating apparatus. Another difficulty consists in the various evaporation characteristics of the coating material in use. For this reason it is desirable to have a variable or adjustable positioning of the evaporation point with respect to the substrates being coated, so that an optimum evaporator position can be set for each substrate from and each coating material.
An electron beam gun that is movable within the vacuum is disclosed is German Auslegachrift 2I 18 082. A container to which the electron gun is fastened is connected to the atmosphere through a tube. The electron gun is part of the container wall. The tube is guided in the chamber wall and is longitudinally displaceable. Such an apparatus is not suitable for use in optical coating, since it is too expensive. The variable range for the positioning of the evaporation point in optical coating apparatus of the prior art is only around 0.05 to 0.5 m. Furthermore, the vapor coating of the tube and contamination of the optical coating by the hydraulic oil are troublesome.
In DE 28 49 933 an electron beam evaporator is described, which is composed of the three elements: radiation source, deflecting magnet and the mounting for the material to be evaporated. The three component elements are displaceable in their spacing from one another, so that the evaporator is adaptable to the particular application.
In DE 37 04 505 an insertion device for vacuum apparatus is described, which has a bipartite, jointed lever arm the inner part of which is configured as a gas-tight hollow body and contains the driving means for moving the insertion arm.

Apparatus and method for electron beam evaporation


The present invention relates to a process of preparing commercial quantities of glucose from sucrose, a process of preparing commercial quantities of glucose and a branched fructan from sucrose, a reactor for practicing same.

1. Field of the Invention
The present invention relates to a process of preparing commercial quantities of glucose from sucrose, and a reactor for practicing same. In particular, the present invention relates to a process for preparing glucose from sucrose by contacting sucrose with a .beta.-2,1-fructosyltransferase and a .beta.-2,6-fructosyltransferase, followed by isolating glucose and a branched fructan, thereby enhancing production efficiencies.
2. Description of the Background
Glucose is a saccharide that is found throughout nature, either as a monosaccharide or incorporated into polysaccharides. Glucose is used clinically as a fluid and nutrient replenisher, as a carbon source in the culturing of microorganisms, and is widely used as a food additive.
Glucose has been prepared commercially from starch (Dean, Gottfried, Advan. Carbohyd. Chem. 5, 127 (1950) and by acid hydrolysis of sucrose. In spite of the availability of the starting materials for preparing glucose the cost of this material remains high, relative to the cost of the starting materials. Accordingly, commercial syntheses of glucose can be improved.
Fructans are found throughout nature (Science and Technology of Fructans, 1993 ed. M. Suzuki and N.J. Chatterton, CRC Press, Inc.). In plants, there are four fructans described 1) inulin, a 2,1- linked fructan found mainly in dicots, such as Jerusalem artichokes and chicory roots; 2) levan or phlein, a 2,6-linked fructan found in some monocots such as timothy; 3) a 2,1- and 2,6- branched fructan found in monocots such as barley, blue agave and wheat; and 4) a fructan of the neoseries, a 2,1-and 2,6-linked fructose on the glucose. The glucose is internal in these molecules, instead of terminal. Fructose residues are then linked 2,1-and 2,6-to both terminal fructose, creating a complex structure (asparagus). Many plants produce more than one of these fructans.
In yeast and fungi, 2,1-linked fructans have been reported.
In bacteria, two fructans have been described 1) an inulin 2,1-fructan from Streptococcus mutans and 2) a levan 2,6-linlked fructan has been described from Bacillus subtilis, Zymomonas mobilis, and many others.
Inulins are comprised of .beta.-2,1-linked fructose chains, linked to an .alpha. D-glucoside; they have a linear structure and typically comprise many .beta.-O-fruc tofuranose units. The average chain length and molecular weight distribution will depend on both the plant species, the growth phase, and the preparation method. Average chain lengths of 10 to 25 are common, in which case the individual units have about 9 to 24 fructose units.
Branched inulins have been reported, which comprise a linear chain of .beta.-2,1-linked fructose chains, linked to an .alpha. D-glucoside, having branched thereon, .beta.-2,6 fructose units. Such a branched inulin material has been reported having been isolated from the sap of the blue agave plant (G.O Aspinall and P.C. Das Gupta Proceeding of the Chemical Society 1959 718-722 and M. N. Satyanarayana Indian J. of Biochem and Biophys. (1976) 13:408-412) and from barley leaves (Simmen et al., Plant Physiol. (1993) 101:459-468).
The properties of an inulin may vary depending on the chain length and the degree of branching. Compositions comprising linear short chain inulins having a degree of polymerization of about 3 to 7 fructose units have been used as reduced calorie sugar substitutes (DE 4,003,140). Longer chain inulins have been uses is fat mimetics and branched fructans may be used as both.
Coussement et al. U.S. Pat. No. 5,659,028 discloses branched fructo-oligosaccharides consisting of a chain which comprises mainly fructose units and has a preferred chain length of 2 to 15 units, on which are fixed one or more side chains mainly composed of fructose units.
In the area of glucose production, Nagle et al. U.S. Pat. No. 4,637,835 report the preparation of glucose and other saccharides from an .alpha.-cellulose using a calciurm chloride catalyst and hydrogen ions.
Miyawaki et al. U.S. Pat. No. 5,524,075 report the production of high purity glucose by saccharifying liquefied starch with an enzyme.
Venkatasubramanian et al. U.S. Pat. No. 4,299,677 report the direct separation of fructose and glucose from a mixture of glucose and fructose by ion exKchange membranes.
Harada et al. U.S. Pat. No. 5,169,679 report the use of fructans composed mainly of .beta.-2,1 bonds having a molecular weight of from 2,000 to 20,000,000 as food additives such as, for example, bulking agents or fat substitutes, for producing low calorie foods.
Kurz et al. U.S. Pat. No. 5,478,732 report a method for obtaining intermediate-chain inulins (e.g., a degree of polymerization of 10-12) by treatment of crude inulin suspensions with a hydrolase enzyme. During the enzymatic treatment, short-chain components are degraded to mono- and disaccharides while long-chain inulins are separated off, then converted to a dry form.
Adachi et al. report in U.S. Pat. No. 4,681,771 that when sucrose (G-F) is contacted with an enzyme having fructose transferring activity (hereinafter referred to as a fructosyltransferase), a low caloric, low-cariogenic sweetener composition is obtained which comprises glucose, sucrose, the trisaccharide (GF.sub.2), the tetrasaccharide (GF.sub.3) as well as minor amounts of fructose, pentasaccharide (GF.sub.4) and hexasaccharide (GF.sub.5). The amount of higher linear inulins drops off dramatically, the majority fraction being inulin GF.sub.2-3.
Kono et al. U.S. Pat. No. 5,314,810 report that the half-life of an immobilized fructosyltransferase used in the reaction with sucrose can be improved by support on a granular carrier such as chitosan derivative or an anion exchange resin. Such a supported enzyme is reported to allow for the industrial production of a low cariogenic sweetener composition.
Heady U.S. Pat. No. 4,317,880 reports the production of novel fructose polymers and high fructose syrups from sucrose by the combined action of a fructosyltransferase enzyme and a glucose isomerase enzyme preparation.
A method of producing glucose and/or fructose irom sucrose is reported by Catani et al. in co-pending U.S. application Ser. No. 09/019,709 filed on Feb. 6, 1998.
Present methods for preparation of glucose from sucrose however, have suffered from poor efficiency, such that the production of commercial quantities of glucose can be improved.
In addition, there remains a need for processes for preparing commercial quantities of polysaccharides such as linear and branched inulins.

Process for processing sucrose into glucose


Polyethylenes are prepared having a density in the range 900-980 kg/m3 and a weight average molecular weight xe2x89xa7375,000 characterized by a fracture toughness at xe2x88x9240xc2x0 C.  greater than 20 kJ/m2 and a dynamic viscosity of  less than 3000 Pa.s at 100 rad/sec. The polymers also having a die swell of 10-80% and show a desirable combination of physical and processing properties. The polymers are prepared by the use of catalysts comprising a metallocene component and a Ziegler component.

The present invention relates to novel polymer compositions-and in particular to polymer compositions having improved physical properties as well as improved processability.
In recent years there have been many advances in the production of polyolefin copolymers due to the introduction of metallocene catalysts. Metallocene catalysts offer the advantage of generally higher activity than traditional Ziegler catalysts and are usually described as catalysts which are single-site in nature. Because of their single-site nature the polyolefin copolymers produced by metallocene catalysts often are quite uniform in their molecular structure. For example, in comparison to traditional Ziegler produced materials, they have relatively narrow molecular weight distributions (MWD) and narrow Short Chain Branching Distribution (SCBD). By narrow SCBD, it is meant that the frequency of short chain branches, formed where comonomers incorporate into the polyolefin chain, is relatively independent of molecular weight. Although certain properties of metallocene products are enhanced by narrow MWD, difficulties are often encountered in the processing of these materials into useful articles and films relative to Ziegler produced materials. In addition, the uniform nature of the SCBD of metallocene produced materials does not readily permit certain structures to be obtained.
One approach to improving processability has been the inclusion of long chain branching (LCB), which is particularly desirable from the viewpoint of improving processability without damaging advantageous properties. U.S. Pat. Nos. 5,272,236; 5,278,272; 5,380,810; and EP 659,773, EP 676,421, relate to the production of polyolefins with long chain branching.
Another approach is the addition of the polymer processing aids to the polymer prior to fabrication into films or articles. This requires extra processing and is expensive.
A different approach to the problem has been to make compositions which are blends or mixtures of individual polymeric materials with the aim being to maximise the beneficial properties of given components while minimising its processing problems. This also requires extra processing which increases the cost of materials produced. U.S. Pat. Nos. 4,598,128; 4,547,551; 5,408,004; 5,382,630; 5,583,631; and 5,326,602; and WO 94/22948 and WO 95/25141 relate to typical blends.
Another way to provide a solution to the processability problems and to vary SCBD has been the development of various cascade processes, where the material is produced by a series of polymerisations under different reactor conditions, such as in a series of reactors. Essentially, a material similar in some ways to a blend is produced, with a modality greater than one for various physical properties, such as the molecular weight distribution. While polyolefin compositions with superior processability characteristics can be produced this way, these methods are expensive and complicated relative to the use of a single reactor. Processes of interest are disclosed in U.S. Pat. No. 5,442,018, WO 95/26990, WO 95/07942 and WO 95/10548.
Another potentially feasible approach to improving processability and varying SCBD has been to use a multicomponent catalyst. In some cases, a catalyst which has a metallocene catalyst component and a conventional Ziegler-Natta catalyst component are used on the same support to produce a multimodal material. In other cases two metallocene catalysts have been used in polyolefin polymerisations. Components of different molecular weights and compositions are produced in a single reactor operating under a single set of polymerisation conditions. This approach however is difficult from the point of view of process control and catalyst preparation. Catalyst systems of interest are disclosed in WO 95/11264. The polymer produced in this disclosure are blends of polymers having a bimodal molecular weight distribution. They are also prepared specifically in a gas phase fluidised bed reactor.
We have now surprisingly found novel polyethylene compositions which exhibit both improved physical properties exemplified by their initial fracture toughness and improved processability as exemplified by their dynamic viscosity. The novel polyethylenes also show a high density and high molecular weight.
Thus according to the present invention there is provided a polyethylene having an annealed density in the range 900 to 980 kg/m3 and a molecular weight greater than 200,000 characterised in that the polyethylene has
(a) an initiation fracture toughness (Gp) at xe2x88x9240xc2x0 C. of greater than 20 kJ/m2,
(b) a dynamic viscosity of  less than 3000 Pa.s at 100 rad/sec (190xc2x0 C.) and  less than 3000 kpa.s at 0.01 rad/sec (190xc2x0 C.); and
(c) a mass flow rate (MFR) under 21.6 kg load (190xc2x0 C.) of 0.01-100 g/10 min.
Preferably the polyethylene according to the present invention has a fracture toughness greater than 25kJ/m2, a dynamic viscosity  less than 2500 Pa.s at 100 rad/sec (190xc2x0 C.) and  less than 1500 kPa.s at 0.01 rad/sec (190xc2x0 C.) and a MFR of 0.2-10 g/10 min (21.6 kg load).
The preferred density for the polyethylenes of the present invention is in the range 930 to 970 kg/m3 and a molecular weight preferably greater than 400,000.
The polyethylenes of the present invention may also be characterised by having a die swell in the range 10-80%.
Thus according to another aspect of the present invention there is provided a polyethylene having an annealed density in the range 900-980 Kg/m3 and a molecular weight greater than 200,000 characterised in that the polyethylene has
(a) an initiation fracture toughness (Gp) at xe2x88x9240xc2x0 C. of greater than 20 kJ/m2
(b) a dynamic viscosity of  less than 3000 Pa.s at 100 rad/sec (190xc2x0 C.) and  less than 3000 Kpa.s at 0.01 rad/sec (190xc2x0 C.), and
(c) a die swell in the range 10-80%.
The polyethylenes of the present invention preferably have a die swell in the range 20-40%.
The novel polyethylenes of the present invention may suitably be prepared by use of a multisite catalyst having two catalytic components. For example a Ziegler component and a component based on a metallocene complex. Alternatively the multisite catalyst may comprise two metallocene components.
Examples of suitable metallocene components are complexes which may be represented by the general formula:
(Cp)m M Rx R1 y
wherein Cp is a substituted or unsubstituted cyclopentadienyl nucleus; M is a Group IVA, VA or VIA transition metal in particular Zr, Ti, Hf, R and R1 are independently hydrocarbyl having 1-20 carbon atoms, halogen or other suitable monovalent ligand; m=1xe2x88x923, x=0xe2x88x923 and y=0xe2x88x923 wherein the sum of m, x and y equal the oxidation state of M.
Preferred metallocenes are those wherein M is Zr, Hf or Ti, R and R1 are alkyl or halogen and m=2.
Preferred metallocene complexes are those described in EP 129368, EP 206794 and EP 586167.
Particularly suitable are complexes in which the cyclopentadienyl nucleus is substituted by alkyl groups for example butyl groups.
A particularly suitable complex is bis(2-butyl) cyclopentadienyl zirconium dichloride.
The Ziegler component of the multisite catalyst may typically be a traditional Ziegler polymerisation catalyst well known to those skilled in the art. Preferably the Ziegler component of the multisite catalyst is one comprising atoms of titanium and halogen usually chloride and also preferably magnesium. Such catalysts and their preparation will be well known to those skilled in the art.
The multisite catalyst is preferably supported and is most preferably supported on an inorganic support for example silica, alumina or magnesium chloride. The preferred support is silica.
The multisite catalyst may be supported by any traditional method of support. For example the support may preferably be initially impregnated by the Ziegler component prior to impregnation with the metallocene.
Preferably the silica support has been precalcined by heating before impregnation.
The multisite catalyst may also comprise an activator. The preferred activator is aluminoxane, most preferably methyl aluminoxane (MAO). The activator is preferably present in an amount such that the ratio of metallocene to metal (aluminium) is in the range 1-10,000: 10,000: 1 but is preferably in the range 1-100: 100:1.
The novel polyethylenes of the present invention are most suitably prepared by polymerisation of ethylene in the slurry phase in a batch mode of operation. The polymerisation is carried out in a single reactor using an inert solvent for example isobutane at a temperature in the range 80-110xc2x0 C. and at a pressure in the range 400-650 psig. The polymerisation preferably takes place in the presence of a cocatalyst for example an organoaluminium compound. The preferred cocatalyst is a trialkylaluminium for example trimethylaluminium.
It has also been found possible to prepare the novel polyethylenes of the present invention by forming a blend of materials for example a blend of a metallocene derived polyethylene together with a low molecular weight component. The first component of the blend may be a polyethylene having a molecular weight  greater than 200,000 and the second component may be a polyethylene having a molecular weight  less than 200,000. The second component typically is a high density polyethylene. The metallocene derived polyethylene may be prepared using a metallocene complex having the general formula described above. In this respect however it has been found that hafnium metallocenes are most suitable for example bis (2-propenyl) cyclopentadienyl hafnium dichloride.
The low molecular weight component typically has a molecular weight it the range 60,000-95,000.
In order to be processable in extrusion blow moulding pipe and film applications the primary requirements are that the polymer melt should be extrudable and also that it should be resistant to instability or rupture.
The novel polyethylenes of the present invention exhibit these properties of extreme toughness and improved processability. This combination of properties therefore make the novel polymers suitable for use in a wide range of applications. In particular they may be used for high molecular weight blow moulding applications such as large containers as well as pipe and tough film applications.
Thus according to another aspect of the present invention there is provided a pipe or film or moulded article comprising a polyethylene as hereinbefore described.
The novel polymer compositions were characterised by use of the following experimental techniques.
Experimental Techniques
1. Toughness
Toughness was measured using a non-standard Charpy impact test and an impact test machine capable of measuring the load-deformation profile during the impact event. The specimen was 55 mm long, 6.7 mm deep and 6 mm thick and had a 1.7 mm deep sharp notch machined centrally with respect to the length and leaving a ligament of 5 mm behind the notch. Impact testing was performed using a span of 40 mm and an impact speed of 1 m/s over a range of temperature from 23C. down to much lower temperatures. The lower test temperatures depend on the toughness of the material; the higher the toughness, the lower the temperature must be in order to achieve fracture of the specimen. Typically for the tougher materials, temperatures below xe2x88x9260C. are required and down to as low as xe2x88x92120C. At least 5 data points were required in order to assess the toughness of the material and these must cover a temperature range of at least 20C.
For each test at a given temperature, the energy required to initiate crack growth was determined from the area under the load trace up to the point at which fracture occurs (denoted by a sudden load drop). This energy, Up(J), was then divided by 0.52*B*D, where B(mm) and D(mm) are the specimen thickness and depth, respectively, to obtain the toughness Gp(kJ/m2). A graph was then drawn of toughness in KJ/m2 against temperature in degrees Celsius, from which a toughness value at xe2x88x9240C. was derived. In most cases for tough materials, the data have been obtained at temperature below xe2x88x9240C. and the toughness at xe2x88x9240C. is derived by fitting a line of the form
Gp=A*(T+150)+5
to the data. The toughness at xe2x88x9240C., denoted Gp(xe2x88x9240) is then given by
Gp(xe2x88x9240)=A*110+5
in the small number of cases where toughness can be measured at xe2x88x9240C., then the value quoted for Gp(xe2x88x9240) is the measured value.
The value quoted is Gp(xe2x88x9240) in units of kJ/m2.
2. Dynamic Viscosity
Samples for dynamic rheometry were prepared by compression moulding sheet (nominally 1-2 mm thickness) using an electrically heated hydraulic press. The starting powder or pellet is placed between the pre-heated platens of the press (200C.) and allowed to heat for 1 minute before being pressed for 2 minutes. The heating is switched off, and the press water-cooled to ambient temperature before the moulding is released.
Dynamic frequency scans are carried out using a rotational rheometer (Rheometrics RDS2) equipped with 25 mm diameter parallel plates enclosed in an environmental chamber. The environmental chamber is heated using nitrogen gas to avoid excessive sample degradation during testing. A 25 mm diameter disk is stamped from moulded sheet and placed between the pre-heated rheometer plates, which are then closed in such a way as to avoid the generation of excessive normal forces. The sample is trimmed and the oven closed to establish a testing temperature of 190C. A frequency scan is then performed at 10% applied strain over the range 100 rad/s to 0.01 rad/s.
The dynamic viscosity (etaxe2x80x2) is then calculated at each testing frequency using standard equations [Draft International Standard ISO/DIS 6721/10].
Values of etaxe2x80x2 are quoted at frequencies of 100 rad/s (etaxe2x80x2(100), in units of Pa.s) and 0.01 rad/s (etaxe2x80x2(0.01) in units of kPa.s).
3. Melt Mass-Flow Rate (MFR)
Melt mass-flow rate of the materials is measured to ISO 1133:1997-condition 7.
The value quoted is MFR in dg/min.
4. Die Swell
Die swell is determined on solidified extrudate from a melt mass-flow rate test carried out according to ISO 1133:1997-condition 7. Six cut-offs about 25 mm in length, and free from air bubbles and distortion, are taken and allowed to cool evenly. The diameter of each cut-off is measured in two perpendicular directions, 6.35 mm from the leading edge of the cut-off, using a dial gauge micrometer. The die swell is calculated according to
Die Swell=100*(dxe2x88x92do)/do
where d is the mean diameter of the cut-off and do is the diameter of the die orifice in the melt flow rate apparatus. The average value of Die Swell for the six cut-offs is then calculated.
The value quoted is Die Swell in %.
5. Annealed Density
Annealed density for the materials is determined on extrudate from the melt flow rate evaluation in accordance with ISO1872/1-1986.
The value quoted is density in kg/m3.
6. Weight Average Molecular Weight
The distribution of molecular weights is first determined by size exclusion chromatography of the polymer dissolved in trichlorobenzene at 140C. A series of narrow polystyrene standards is used to calibrate the elution time, using the Polymer Handbook (3rd Edition) values for the Mark-Houwink parameters to convert PS molecular weight to PE molecular weight. The weight average of the distribution is then calculated via the formula:
Mw=Sigma wi Mi / Sigma wi
wi being the weight of the fraction of molecular weight Mi.
The value quoted is Mw.
The present invention will now be further illustrated by reference to the accompanying examples.
Preparation of Catalyst
The following procedure was used to prepare a supported multisite (metallocene/Ziegler) catalyst.
A silica (ES70X) support (precalcined to 600xc2x0 C. for 6 hrs under N2) was slurried in dry hexane at 55xc2x0 C. A solution of dibutyl magnesium in heptane was added resulting in a 40 g ES70X/350 ml hexane/28.4 mmol dibutylmagnesium slurry. After 1 hour 2.6 mmol butanol was added followed by 1.6 mmol TiCl4. The solvent was subsequently removed under vacuum to give a dry catalyst powder.
The resultant supported Ziegler catalyst was subsequently impregnated with a bis (n-butyl) cyclopentadienyl zirconium dichloride/MAO adduct (prepared by mixing both in toluene solution). The metallocene/MAO solution was added to the Ziegler catalyst followed by vacuum drying to give a dry catalyst powder.
The resultant supported multisite catalyst had the following analysis
Mg 1.12%
Ti 0.92%
Al 12.2%
Zr 0.38%.
The above catalyst was used to polymerise ethylene in a batch reactor in the presence of trimethylaluminium as cocatalyst. The polymerisation was performed in the slurry phase in isobutane. The following Examples 1-3 represent polymerisations under the conditions given in Table 1.
The polymer product was stablised and compounded using a Prism lab scale twin screw extruder. Three passes through the compounder were used to ensure adequate homogeneity while avoiding molecular weight degradation.


A measurement system and method for a telecommunication systems diagnoses problems within a communication line. The measurements are performed both non-intrusively and intrusively in an interactive manner, and evaluate the transmission quality of the communication line through to the subscriber's telephone set.

To diagnose potential problems with a communication line within a telecommunication network, several measurements techniques have been utilized. At the most basic level, the metallic loop test (MLT) is a measurement technique that has been used to test a direct current (dc) component of the connection between the subscriber and an end-office, commonly known as the loop connection. MLT determines whether a short circuit exists in the communication line that would prevent transmission, but cannot evaluate the transmission quality of an operating communication line.
To assess the transmission quality of a communication line, other measurement techniques have been developed. For example, one technique is to take a segment of the communication network, for example the communication path between two toll switches, off-line/out-of-service and then perform measurements on that particular segment. This process is then repeated for other segments of the communication network to isolate the origin of the problem. Such a measurement technique, however, presents several problems. First, substantial costs result from taking segments of the communication network off-line to perform testing. Second, every segment of the communication network may not be owned by the same commercial entity. In such a case, performing and coordinating a test of the communication path from the call origin to the call destination may not be feasible. Third, each time a communication line is established within a telecommunication network, the specific path of the communication line likely employs different transmission facilities/trunks. Therefore, the problem may appear intermittently on calls between two locations and may require extensive testing to identify the source of the problems. Furthermore, this measurement technique can only be performed on the limited portion of the communication line between the two end-office switches which is generally not the cause of transmission problems. Therefore, the portion of the communication line that is frequently the source of transmission problems, the portion of the communication line between the end-office switch and the subscriber's telephone set, cannot be tested using this measurement technique.
Measurement techniques utilizing a device known as a transmission "test line" have been developed to evaluate portions of the communication line. The test line device is located at a switch. Typically, a maintenance technician would be sent to the subscriber's premises to remove the subscriber's telephone set and then to install the measurement device, which would make a connection to the test line. Measurements are then performed through the transmission of various test signals between the near-end (i.e., maintenance facility's end) test equipment and the far-end test line device. For example, the 100 test line is an industry-wide device used to test loss and noise on a connection.
The use of test line equipment, however, suffers several shortcomings. First, this testing is entirely intrusive and cannot be performed while the subscriber is on the line. Thus, the subscriber cannot provide the maintenance technician any simultaneous feedback during the course of measurements. Second, this testing requires sending a technician to the customer's location which is expensive.
Similar to test line equipment, U.S. Pat. No. 5,490,199 issued to Fuller et al., on Feb. 6, 1996, and assigned to AT&T Corp. discloses a system for monitoring and analyzing facsimile transmissions. Measurements are performed non-intrusively and in real time during the transmissions of facsimiles and thus require a facsimile machine connected at both ends of the connection. These measurements, however, cannot be performed on a connection between any devices other than facsimile machines. Thus, just like test line equipment, these measurements require the subscriber's telephone set to be removed from the communication line. Furthermore, because these measurements cannot be performed while the subscriber is talking on the line, the subscriber cannot provide the maintenance technician any simultaneous feedback.

Interactive measurement system and method for telecommunication networks


A synchronizing ring 10 having an annular structural part 11 and a frictional layer 12 is manufactured by filling a mold 20 with a material for the structural part or a material for the frictional layer and compacting the material filled in the mold 20, filling the mold with a material for the frictional layer or a material for the structural part and compacting the material filled into the mold to unify the structural part and the frictional layer, and sintering the unified structural part 11 and frictional layer 12 in a sintering furnace. The frictional layer 12 can be combined with the structural part 11 without forcibly mounting the frictional layer 12 on the structural part 11. The material for the frictional layer need not be presintered, and the frictional layer can be formed by a single sintering cycle.

A synchronizing ring of such a kind has an annular structural part and a frictional layer. Some synchronizing rings have an annular structural part and a frictional layer formed on the inner circumference of the structural part, some synchronizing rings have an annular structural part and a frictional layer formed on the outer circumference of the structural part, and other synchronizing rings have an annular structural part and frictional layers formed on the outer and inner circumferences of the structural part, respectively. In any one of those synchronizing rings, the frictional layer is brought into frictional engagement with the tapered portions (conical portions) of the speed gears.
The frictional layer is provided in its working circumference to be in engagement with the tapered portion of the speed gear with a plurality of circumferential grooves of a trapezoidal cross section for cutting an oil film. Top lands are formed between the grooves in the frictional layer.
If the top lands are abraded, the area of contact between the frictional layer and the tapered portion increases and an oil film is liable to be formed. Consequently, such a synchronizing ring having abraded top lands needs much time for bringing the twospeed gears to the same rotating speed.
Therefore, in most cases, the frictional layer is formed of a highly abrasion-resistant, frictional metal easy to machine to form grooves therein, such as iron, aluminum bronze, and high-strength brass.
In most recent transmissions of a high output capacity, a high pressure is exerted on a synchronizing ring by the tapered portion of a speed gear. Therefore, the frictional layer of the synchronizing ring is abraded rapidly and hence, in some cases, the synchronizing ring is unable to withstand a long period of use. Frictional layers of high-strength brass are particularly rapidly abraded.
Some synchronizing rings have a structural part and a frictional layer formed of a material containing resin, metal or paper as a base material and bonded to the structural part.
All those synchronizing rings need to be fabricated by bonding a frictional layer to a structural part. Therefore, the manufacture of those synchronzing rings needs much manhours and high costs.
A method of manufacturing a synchronizing ring proposed to solve the foregoing problems is disclosed, for example, in Japanese Unexamined Patent Publication No. 223105/1988.
This previously proposed method of manufacturing a synchronzing ring comprises the following steps.
First, a self-holding molded ring, which serves as a frictional layer, is formed by compacting a mixture of a sintered powder and a bond or by presintering a sintered powder.
Secondly, the molded ring is pressed in a support ring (structural part) to form an assembly of the molded ring and the support ring.
Lastly, the assembly of the molded ring and the support ring is sintered to unify the molded ring and the support ring.
This method of manufacturing a synchronizing ring has the following problems.
(1) The method requires much time and labor and hence it is difficult to manufacture the synchronizing ring at a low cost because the method needs both the process for compacting a sintered powder and the process for pressing the molded ring in the support ring.
(2) The molded ring, i.e., the frictional layer, needs tube formed of metal so that the molded ring may not be broken by a pressure that is applied thereto when the molded ring is pressed in the support ring and the frictional properties and abrasion resistance of the metal must be sacrificed to strength. Consequently, the porosity of the frictional layer is reduced and the frictional layer is unable to secure a satisfactorily high frictional effect.

Method of manufacturing sintered synchronizing ring


A fluid handling installation for selectively connecting any one of a plurality of inlet conduits to any one of a plurality of outlet conduits includes a frame supported manifold configuration of a plurality of perpendicular conduits and corresponding connection modules that can be selectively operated to connect inlet and outlet conduits.

This invention concerns pipe connection apparatus, and more specifically multiple pipe installations for selectively connecting any one of a plurality of inlet pipes to any one of a plurality of outlet pipes. The embodiment described herein is directed to pipes for circulation of petroleum products.
A routine requirement in multiline fluid distribution installations is to be able to connect any one of several inlet lines to any one of several outlet lines.
To this end consideration has already been given to disposing the inlet lines and the outlet lines in parallel planes and two perpendicular directions in these planes, and to providing the end of each line with a telescopic end-piece adapted to extend parallel to these planes until it comes into contact with the telescopic end-piece of any one line of the other category. This has various drawbacks, however.
First the use of telescopic end-pieces raises sealing, guidance and mechanical strength problems which, in practice, limit the application of this solution to small numbers of inlet and outlet lines. Less importantly, this solution does not lend itself well to automation. Furthermore, and more importantly, the use of telescopic sections necessarily involves a variation in the inside diameter which significantly reduces the effectiveness of a pipeline pig or scraper designed to cleanse the walls of inlet and outlet lines.
Another requirement in multiline fluid distribution installations has been for a "liquid switching station" formed of pipes all of which can be scraped clean.

Temporary selective pipe connection apparatus with multiple inlets and outlets


Method and system for making a spherical proppant having a selected grade from a naturally occurring mined mineral having a hardness of over 6.0 Mohs. The method and system involves preprocessing the mineral mechanically into a semi-dry feedstock comprising a mass of particles with initial sphericity values generally less than 0.60; subjecting the semi-dry feedstock to an aggressive abrasive attrition operation for a process time; and, controlling the process time to a value wherein the particles of the feedstock are converted to final processed particles having a sphericity greater than 0.60 by increasing the sphericity of the feedstock particles by at least 0.10. In addition, the processed particles are screened to obtain a proppant having a selected grade.

A proppant is granular mass forced under pressure into fissures in the extraction cavity of a gas or oil well. The proppant must be able to maintain exit flow to the outlet of a gas or oil extraction bore; therefore, it requires large particles having a relatively uniform, higher spherical shape. It must have the ability to absorb a crushing force often exceeding 4,000 psi. Only a certain limited number of silica sand deposits provide sand having a high degree of roundness and a high degree of sphericity, as well as crushing resistance. Consequently, only sand from the specific mines or areas are acceptable as a frac sand proppant for oil or gas extraction. With the present demand for claiming more oil and gas from an extraction bore, such natural frac sand is now becoming in short supply. It commands a very high price on the open market. Such special sand has an inherent high roundness and high sphericity. The roundness characteristic measures the curvature of the individual sand particles. Sphericity compares the particles to a perfect sphere. This sphericity value for frac sand is greater than 0.60, where 1.00 is perfection. Such naturally occurring "frac" sand forms the background and objective of the present invention, although the invention has been used for processing other hard minerals into an acceptable proppant. The hard naturally occurring minerals are those minerals having a hardness on the Mohs scale of over 6.0. It is very important for the frac sand industry to have a product that resist high pressures without breaking apart the sand grains, as well as to have enough sphericity and roundness to leave adequate voids to allow oil to flow between the voids. This is referred to as permeability. Angular grains, as well as grains with fractures and grains that are weaker than the quartz, are detrimental. Indeed, they are unacceptable. Such grains when submitted to high pressures break apart and generate fine particles that block the voids impending the flow of natural gas or oil from the well.

Method of making proppant used in gas or oil extraction


An arrangement for separating coarse ash out of a flue gas stream, comprising a catalytic converter disposed in a widened flue gas channel portion and serving for reducing the NOx level in the flue gas stream. Also disposed in the widened channel portion is a separator sieve that extends essentially over the entire cross-section thereof. The separator sieve is provided with a plurality of openings for the passage of flue gas therethrough. Each opening has a cross-section that is smaller than a cross-section of coarse ash particles that are to be separated out.

The present invention relates in general to the field of coal-fired power stations having a dry firing, and in particular to an arrangement for separating coarse ash out of a flue gas stream, a separator sieve being disposed in a flue gas channel that leads to a catalytic converter for reducing the NOx level and/or a heat exchanger for pre-heating combustion air.
During dry firings in a coal-fired power plant, ash is produced as dry dust that is partially carried along by the flue gas stream. As a function of the type of coal and the temperature distribution within a combustion chamber, an exceeding of the ash-softening point can occur locally. As a result, the originally dry and pulverous ash particles stick together or even sinter together. The resulting coarse ash particles (popcorn ash) can, as is known, clog the channel walls of catalytic converters, provided for reducing the NOx level, of flue gas cleaning devices, and/or can lead to significant pressure drops in the catalytic converter, in the following air pre-heater and/or in the electrostatic filter.
Commonly owned U.S. Pat. No. 6,994,036 discloses separating coarse ash out of the flue gas stream, before it reaches the catalytic converter, with the aid of a sieve arrangement that can be pivoted out of a rest position against the effect of a return force. The flue gas stream is subjected to constant, slight vibrations that suffice to cause movements or vibrations at the sieve arrangement. This causes the coarse ash particles that have been separated off on the sieve and adhere to the sieve surface to be shaken off.
With this known arrangement, the separator sieve is disposed approximately vertically at the inlet of a flue gas channel. The coarse ash particles are shaken off into an ash hopper that precedes the sieve.
At high flue gas flow velocities, the metallic meshes of the known separator sieve are subjected to considerable abrasion effects from ash particles that strike the sieve and pass through the sieve. Due to this abrasion effect, sieve openings result through which the coarse ash can pass, thereby partially reducing the separation function of the sieve arrangement. For this reason, in order to maintain their separation function, such separator arrangements must be checked, serviced and possibly replaced, whereby the power plant must sooner or later be briefly shut down.
By using separator modules that at the in-flow side are made of a material having a high mechanical wear resistance, such as a ceramic or sintered material, the durability of the sieve arrangement in flue gas channels can be considerably improved at high flue gas flow velocities. Due to the large dimensions of the sieve cross-sections in the flue gas channel, such sieve arrangements of wear-resistant materials entail considerable manufacturing costs.
It is therefore an object of the present invention to provide a separator arrangement that is economical to produce, and that even at high flue gas flow velocities in the flue gas channel enable an excellent separation function and operation that is favorable with respect to maintenance.

Arrangement for separating coarse ash out of a flue gas stream


Briefly, in accordance with one embodiment of the invention, a method of compensating for Doppler error in a wireless communications system employing Viterbi decoding comprises the steps of: for each signal sample in a first predetermined-sized grouping of received signal samples, performing a parallel Viterbi update and short symbol decode; and for a second predetermined-sized grouping, forming by pipeline processing an estimate of the Doppler error in accordance with the parallel short traceback decoding performed for the first grouping, and adjusting each signal sample in the second grouping in accordance with the estimated Doppler error.. Briefly, in accordance with another embodiment of the invention, a Viterbi traceback reconstructed signal sample index comprises: a state counter, a traceback shift register (TBSR); a signal reconstruction table; and a comparator coupled in a configuration so as to provide the sign bit to the TBSR from a comparison of binary digital signals. The state counter is coupled so as to provide digital signals to the TBSR and the TBSR is coupled so as to provide digital signals to the signal reconstruction table.

Several standards are being employed with respect to signaling standards for digital cellular telephony worldwide. One such standard is Europe's global system for mobile communications (GSM), described, for example, in the ETSI/GSM Specifications. Likewise, another standard, employed in the United States, is IS54. These signaling standards are typically intricate. Typically, a signal burst is transmitted via a wireless medium comprising a plurality of differentially encoded symbols, such as bits or binary digital signals. The encoded symbols are typically transmitted using phase shift keying in the baseband, such as, for example, minimum phase shift keying (MSK). This baseband signal form of the signal burst is typically then transmitted via a wireless medium using a radio frequency (RF) carrier.
In wireless communications, such as digital cellular telephony, transmission and reception typically occurs between stations, at least one of which is in motion. Furthermore, the velocity of the mobile station may change over time. As is well-known, such relative motion between transmitting and receiving stations, such as between a mobile station and a base station, may result in a Doppler shift of the frequency of the signal being transmitted. This Doppler shift may therefore result in a phase or frequency error in the received signal. Because of such a Doppler shift, the integrity of the signal being transmitted may be corrupted at the receiving end of the communications system.
Although various processes for compensating for such errors due to a Doppler shift are known, one problem associated with conventional approaches is the impact upon available signal processing resources at the receiving station. Typically, a receiving station, such as a mobile station, has limited signal processing capability. Therefore, exhaustive approaches to performing Doppler calculations and signal correction may exceed or at least bottleneck available resources when such resources are needed to continually process additional signals. A need therefore exists for a method of compensating for Doppler error while reducing associated bottlenecks for the available signal processing resources of a receiving station.

Method of compensating for doppler error in a wireless communications system, such as for GSM and IS54


A probe thermometer comprises a main body, a probe, a self-tapping thread, a temperature sensing unit and a display unit. The interior of the main body has a circuit board. The probe includes a measuring end and a coupling end which couples the main body. The self-tapping thread is formed on the measuring end. The temperature sensing unit is disposed within the probe and the temperature sensing unit is electrically connected to the circuit board. The display unit is disposed on the main body. The display unit, the temperature sensing unit and the circuit board are electrically connected. Thereby, the probe thermometer of the instant disclosure is convenient and effectively reduces cost.

1. Field of the Invention
The instant disclosure relates to a probe thermometer; in particular, to a probe thermometer with a self-tapping thread.
2. Description of Related Art
As the standard of living improves, consumers' demand for material needs relatively increases; even food and cuisine are no exceptions. Among the wide variety of low temperature food products that are commercially available, frozen food products may best maintain the freshness of food products. For regular frozen food products, transporting at a low temperature throughout the entire transportation process is generally required. In the industry for transporting low temperature food products, only a fluctuation of +/−2° C. is allowed during the process of transportation. As a result, temperature control becomes particularly important for food products that have various temperature requirements. The finer the temperature control, the more secured is the quality of food products.
However, since the surface of food products are quite hard during defrosting, regular probe thermometers for cooking or measuring liquids cannot effectively penetrate and measure the core temperature of the frozen food products. Thusly, it is impossible to grasp the temperature inside the frozen food products which becomes a significant problem that many wish to resolve in the industry.


A method of controlling driving force of a vehicle includes estimating a first maximum road surface frictional coefficient based on a driving stiffness defined by a micro slip ratio and driving force of drive wheels, in a first driving state where the vehicle travels straight at a constant acceleration, estimating a second maximum road surface frictional coefficient based on a steering reaction force detected by an electric power steering device, in a second driving state different from the first state and where the vehicle is steered, estimating a third maximum road surface frictional coefficient to be a given value in a third driving state different from the first and second states and where an outdoor air temperature is above a determination temperature, and controlling the driving force to settle within a friction circle defined by each of the highest frictional coefficients and a ground contact load of the drive wheels.

Conventionally, four-wheel drive vehicles (4WDs) are known in which a driving force from an engine is transmitted to front or rear wheels, the transmitted driving force is partially transmitted to the other front or rear wheels via a driving force distribution mechanism (e.g., an electronically-controlled coupling), and, by controlling this driving force distribution, more suitable driving characteristics of the vehicle is secured.
Normally in a four-wheel drive vehicle, in principal, a possibility of main drive wheels slipping is determined using a friction circle corresponding to a performance of the main drive wheels obtained experimentally or empirically, and if the determined possibility deviates from the friction circle of the main drive wheels, the driving force is partially distributed from the main drive wheels to part-time drive wheels. As a result, a driving loss caused by the slip of the main drive wheels is reduced. Here, when a timing for the driving force distribution to the part-time drive wheels is set early regardless of the main drive wheels having more room for performance, fuel efficiency may degrade unnecessarily due to a driving loss caused by a slip of the part-time drive wheels, a mechanical loss of a drive system due to the driving force distribution to the part-time drive wheels, etc. Therefore, by setting the driving force distribution timing for the part-time drive wheels as late as possible to the extent that the performance of the main drive wheels reaches its limit, a significant improvement in fuel efficiency can be expected.
Since a largest frictional force corresponding to the radius of the friction circle is proportional to a maximum road surface frictional coefficient (μ) corresponding to a largest driving force, improving the calculation precision of the maximum road surface μ is an urgent task for controlling the driving force of the vehicle. For example, when a temperature of outdoor air is high (e.g., 10° C. or above), it can be assumed that the weather is sunny and the traveling road surface is dry, and therefore the maximum road surface μ can be estimated to be high. Further, JP5179891B discloses a road surface frictional coefficient estimating device including a steering assist detecting module which detects a steering assist force of a power steering device, and a steering operation amount detecting module which detects a vehicle driver's steering operation amount. A road surface frictional coefficient is estimated based on the time from when the steering operation amount is detected until the steering assist force exceeds a given value. Thus, the maximum road surface μ can be estimated via the steering assist force, a so-called steering reaction force, when a steering wheel is controlled.
Meanwhile, within a micro slip range, a slip ratio and the driving force (driving torque) are assumed to be in a relationship of a linear function passing through the origin, and therefore, it is possible to obtain a driving stiffness based on a relationship between the slip ratio and an actual torque of an engine which is a driving source. The present applicant already focused on the driving stiffness and proposed an art for estimating a maximum road surface μ based on this driving stiffness (JP2016-216934A).
In a case of estimating the maximum road surface μ by using an outdoor air temperature, although a simple configuration may be applied for control processing, a traveling state of the vehicle is not taken into consideration whatsoever and only the environmental condition which is the outdoor air temperature is used to estimate the maximum road surface μ, and thus, a reliable estimation result cannot be expected. Further, with the road surface frictional coefficient estimating device of JP5179891B, since the maximum road surface μ is estimated by taking the traveling state of the vehicle into consideration, the maximum road surface μ which is accurate to some extent can be considered to be obtained. However, since the traveling mode of the vehicle is roughly divided into a linear traveling mode and a turning mode and acceleration and deceleration are performed in these traveling modes, in the art of JP5179891B, the maximum road surface μ can only be estimated within a specific operating range in which the steering operation is performed. Similarly in the art of JP2016-216934A, the maximum road surface μ can only be estimated within a specific range in which a ground contact load W is constant.
That is, the operating range in which the maximum road surface μ can be estimated is strictly limited in both of JP5179891B and JP2016-216934A, and no specific art for expanding the operating range in which the accurate maximum road surface μ is estimatable, which can be put into practical use, has been proposed. Therefore, to further improve the fuel efficiency, an art for expanding the estimatable range of the accurate maximum road surface μ needs to be established.

Method of controlling driving force of vehicle