A controlling method of an image sensor is disclosed. The method includes: measuring a first output voltage of a drive transistor, a gate of which is combined to a floating diffusion region, after a predetermined integration time; resetting the floating diffusion region by turning on a reset transistor connected between the floating diffusion region and a power supply group; measuring a reference voltage outputted from the drive transistor; transferring electric charges generated in a photo diode by sensing light inputted from the outside to the floating diffusion region by turning on a transfer transistor connected to the photo diode; and measuring a second output voltage of the drive transistor; wherein an image is generated by using a voltage difference between the first output voltage and the reference voltage, and a voltage difference between the second output voltage and the reference voltage.

1. Technical Field
The present invention relates to an image sensor, more particularly to a CMOS image sensor and a controlling method thereof.
2. Description of the Related Art
An image sensor refers to a semiconductor device converting an optical image to an electric signal. The image sensor includes a charge coupled device (CCD) and a complementary metal-oxide-semiconductor (CMOS) image sensor. The CCD is composed of an integrated circuit containing metal-oxide-semiconductor (MOS) capacitors disposed adjacent to each other, and each capacitor can transfer its electric charge to a neighboring capacitor. The CMOS image sensor is formed by using a CMOS technology, which employs a control circuit and a signal processing circuit as peripheral circuits, is composed of as many MOS transistors as the number of pixels, and detects an output from each MOS transistor one by one.
FIG. 1 is a sectional view of a pair of pixels having different sizes in a conventional image sensor. As shown in FIG. 1, a conventional CCD expands a dynamic range by using a large pixel 110 and a small pixel 120.
It takes the small pixel 120 four times as much time as the large pixel 110 to be saturated with inputted light of the same intensity. Accordingly, with a pair of pixels generating different outputs, the dynamic range can be expanded. Here, the dynamic range refers to a range within which a maximum output of the image sensor can change, and the wider the dynamic range becomes, the more realistically an object can be represented.
FIGS. 2a and 2b illustrate images generated by applying different output voltages, and FIG. 2c illustrates a composite image of the images in FIGS. 2a and 2b. A composite image can be created by combining a short exposure image and a long exposure image.
The brightness of the composite image can be controlled by regulating the ratio of the output voltage required for producing the short exposure image to the output voltage required for producing the long exposure image. Therefore, the brightness of the composite image can be set between the brightness of the short exposure image and that of the long exposure image.
However, a minute difference in manufacturing process creates a fixed pattern noise associated with an offset voltage in the image sensor. In order to compensate such a fixed pattern noise, the image sensor reads a reset voltage signal and a data voltage signal from each pixel in a pixel array, and then outputs the difference between the two voltage signals. This method is called a correlated double sampling (CDS).
Here, the CCD has disadvantages in that the CCD has a complex operating process, consumes a large volume of power, requires a number of mask process steps, and is manufactured as a multi-chip device because a signal processing circuit can not be implemented in the CCD chip. In order to overcome these disadvantages, a CMOS image sensor, which uses sub-micron CMOS manufacturing technology, has been developed. The CMOS image sensor detects signals by a switching method from a photo diode and a MOS transistor formed in a unit pixel to create an image. Since the CMOS image sensor is manufactured by CMOS manufacturing technology, it consumes less-power and requires fewer masks than the CCD, and can be integrated in one chip with other signal processing circuits. Therefore, the CMOS image sensor is emerging as an alternative to the CCD.
Also, in the case of pairing a large pixel with a small pixel, photo diodes should also be formed to have different sizes, complicating the manufacturing process.
And, in the case of pairing a large pixel with a small pixel, each pixel needs its own transistor, increasing the overall size of the image sensor.
Moreover, in order to obtain a wide dynamic range, the conventional CCD image sensor stores data on the short exposure image and the long exposure image in separate frame memories and then conducts an operation, thereby requiring a large volume of memory.

Image sensor and controlling method thereof


Improved adhesion of electroless metal deposited on an organic dielectric layer with phase separated morphology is accomplished by the spontaneous formation of a morphologically and topographically rough surface. In one embodiment a ternary solution of a polar solvent and two polymer precursors of the same polymer which are separable in two phases of different order are cast in film on a substrate and heated to form two phases of different order to spontaneously produce a rough surface. Upon exposure to an alkaline solution, one phase is etched at a faster rate than the other. Seeding and electroless deposition of a metal on the rough surface results in improved adhesion of the metal to the dielectric layer. In a second embodiment a quaternary solution of a polar solvent, a seeding agent, two polymer precursors of the same polymer which are separable in two phases of different order are cast in a thin film on a substrate and heated to form three phases. Upon curing the precursors there is surface roughening as a result of phase separation. Upon exposure to alkaline solution there is etching of one of the polymer phases at a faster rate and simultaneous opening of the seeding colloid. The rough surface is overcoated with a photoresist, exposed and developed. Subsequent electroless metal deposition results in improved metal to dielectric layer adhesion. The method is applicable to selective deposition of electroless copper onto a polyimide layer.

The present invention relates to a method of improving adhesion between a metal and an organic dielectric material when the metal is electrolessly deposited on the organic dielectric layer. Specifically, the invention relates to the formation of the dielectric material layer exhibiting phase separated morphology and rough surface topography of at least two phases of the dielectric material and the utilization of a dispersed catalyst seed layer to improve the adhesion of subsequently electrolessly deposited metal onto the dielectric layer. Quite specifically, the invention concerns selective electroless deposition of copper, nickel, cobalt, gold, palladium or any other electroless metal or metal alloy onto polyimide with improved adhesion.
Electroless copper deposition on polyimide principally using palladium as a seed layer has important applications in high-end microelectronics technology. However, improving the adhesion between the deposited copper and the polyimide is a major problem.
U.S. Pat. No. 3,370,973 describes a method in which a ternary solution of a polar solvent such as NMP (normal methyl pyrrolidone), a Pd bearing salt and polymide is formed. The solution is cast as a very thin film, which upon spinning and drying has 25 to 50 .ANG. particles of Pd colloid dispersed uniformly throughout the layer. If the amount of Pd salt is low (below 0.01% in the ternary solution and in the range between 0.001 to 0.0001% in the final film), after a conventional polyimide curing step, upon exposure to an alkaline solution, or to a plasma of air, nitrogen or the like, the Pd colloidal particles are exposed and act as catalytic sites for electroless copper (metal or metal alloy) deposition. Since many electroless baths are alkaline, it is possible to expose the Pd colloidal dispersion in the polyimide in situ, in the bath.
Since the colloidal particles are separated by a distance of 400 to 600.ANG. or more and the particles themselves are only 25 to 50.ANG. and the dielectric properties of the Pd containing polymer film is not affected and current leakage between plated copper lines shows no surface conductivity as a result of the presence of the particles. Surface leakage and conductivity can be increased by increasing the loading of the solvent-polyimide mixture with additional Pd salt. If desired, the loading can be increased to the level of nearly metallic conductivity.
Adhesion of electroless copper or nickel on Pd doped polyimide which shows no visible presence of Pd (very low concentration) is described in U.S. Pat. No. 3,370,973 and the film adhesion strength was equivalent to approximately 30 to 50 g/mm. The adhesion was postulated to be primarily due to mechanical interlocking of Pd particles.
Selective plating through resist masks and activation by forming gases after resist exposure, alkaline treatment or forming gas plasma ashing is described in IBM TDB vol. 13, October 1970, p. 1199 and in IBM TDB vol. 25, December 1982, pp. 3336-38.
U.S. Pat. Nos. 4,618,568 and U.S. Pat. No. 5,032,488 describe the use of radiation to deposit and/or reduce Pd-salt for surface activation that may be used for electroless plating.
U.S. Pat. Nos. 4,948,707 and 4,701,351 use an alkaline solution (NaOH) to hydrolyze an organic surface for Pd-salt deposition. In U.S. Pat. No. 4,948,707 the surface is roughened ex-situ, by the addition of a separate roughening step.
U.S. Pat. No. 5,045,436 and IBM TDB vol. 33, February 1991, p. 418-421 describe activation by thermal degradation of Pd-salt. However, both references fail to describe the use of a precursor polyimide blend.
U.S. Pat. No. 4,940,609 describes surface modification using a chemical process involving quaternary amine salts. That is, chemical means is used to achieve adhesion rather than physical properties related to mechanical interdigitation at a 100-1000 .ANG. scale.
In accordance with the teachings of the present invention, a morphologically and topographically rough surface is spontaneously formed, without any ex-situ roughening process. The rough surface provides enhanced adhesion, not previously obtained by physical roughening of organic dielectric layers.

Electroless metal adhesion to organic dielectric material with phase separated morphology

International Business Machines Corporation


A developing device includes a storage portion for retaining developer; a light guide member for forming a plurality of optical paths passing through the storage unit to detect an amount of the developer in the storage portion; a plurality of window members formed in a wall of the storage portion for passing the optical paths therethrough; a blocking member disposed to be movable for blocking the window members; and a drive unit for moving the blocking member. The blocking member is disposed on each of the optical paths. When the drive unit moves the blocking member, the blocking member periodically blocks and opens each of the optical paths in a specific cycle.

The present invention relates to a developing device and an image forming apparatus.
A conventional developing device is used in an image forming apparatus such as a printer, a copier, and the likes. In the conventional developing device, an optical detection unit is provided for detecting a remaining amount of toner stored in a storage unit as developer. In this case, a transparent window member is disposed in a wall of the storage unit retaining toner, so that a remaining amount of toner is detected using light passing through the window member (refer to Patent Reference).    Patent Reference Japan Patent Publication No. 2003-162138
In the conventional developing device, a remaining amount of toner is detected at one point in the storage unit. Accordingly, when toner has an uneven distribution in the storage unit depending on a pattern of an image to be formed, it is difficult to accurately detect a remaining amount of toner.
In order to securely prevent toner from being supplied to a developing roller even in a case of an insufficient amount of toner, it is arranged to detect a remaining amount of toner with a certain margin, considering a situation in which a remaining amount of toner is not accurately detected. Accordingly, a toner cartridge is prompted to replace at a relatively early stage. As a result, even though a toner cartridge still retains a sufficient amount of toner, the toner cartridge is replaced with new one, thereby wasting toner.
In view of the problem described above, an object of the invention is to provide a developing device and an image forming device, in which it is possible to solve the problems of the conventional developing device. The developing device includes a plurality of window members disposed on a plurality of optical paths for detecting a remaining amount of toner. Further, a cleaning unit is provided for periodically cleaning the window members in cycles shifted by a specific phase. Accordingly, even when toner retained in a storage unit has an uneven distribution, it is possible to accurately detect a remaining amount of toner, thereby conserving toner.
Further objects of the invention will be apparent from the following description of the invention.

Developing device and image forming apparatus


A method for signaling adaptive loop filter (ALF) settings is provided. A video decoder receives data from a bitstream for a block of pixels to be decoded as a current block of a current picture of a video. The video decoder parses whether to use adaptive parameter set (APS) for filtering the current block without determining whether to select a particular APS from a plurality of APSs. When the APS is used to filter the current block, the video decoder parses a first filter selection index for selecting a filter from a set of filters in the APS. When the APS is not used to filter the current block, the video decoder signals a second filter selection index for selecting a filter from a set of default fixed filters. The video decoder filters the current block based on the selected filter. The video decoder outputs the filtered current block.

Unless otherwise indicated herein, approaches described in this section are not prior art to the claims listed below and are not admitted as prior art by inclusion in this section.
High-efficiency video coding (HEVC) is the latest international video coding standard developed by the Joint Collaborative Team on Video Coding (JCT-VC). The input video signal is predicted from the reconstructed signal, which is derived from the coded picture regions. The prediction residual signal is processed by a linear transform to produce a set of transform coefficients. The transform coefficients are quantized, and entropy coded together with other side information in the bitstream. The reconstructed signal is generated from the prediction signal and the reconstructed residual signal after inverse transform on the de-quantized transform coefficients. The reconstructed signal is further processed by in-loop filtering for removing coding artifacts. The decoded pictures are stored in the frame buffer for predicting the future pictures in the input video signal.
In HEVC, a coded picture is partitioned into non-overlapped square block regions represented by the associated coding tree units (CTUs). A coded picture can be represented by a collection of slices, each comprising an integer number of CTUs. The individual CTUs in a slice are processed in a raster scanning order. A bi-predictive (B) slice may be decoded using intra prediction or inter prediction using at most two motion vectors and reference indices to predict the sample values of each block. A predictive (P) slice is decoded using intra prediction or inter prediction using at most one motion vector and reference index to predict the sample values of each block. An intra (I) slice is decoded using intra prediction only.
A CTU can be partitioned into multiple non-overlapped coding units (CUs) using the recursive quadtree (QT) structure to adapt to various local motion and texture characteristics. A CTU may also be partitioned into one or multiple smaller size CUs by a quadtree with nested multi-type tree using binary and ternary split. The resulting CU partitions can be in square or rectangular shapes.
One or more prediction units (PU) are specified for each CU. The prediction unit, together with the associated CU syntax, works as a basic unit for signaling the predictor information. The specified prediction process is employed to predict the values of the associated pixel samples inside the PU. A CU can be further partitioned using the residual quadtree (RQT) structure for representing the associated prediction residual signal. The leaf nodes of the RQT correspond to the transform units (TUs). A transform unit is comprised of a transform block (TB) of luma samples of size 8×8, 16×16, or 32×32 or four transform blocks of luma samples of size 4×4, and two corresponding transform blocks of chroma samples of a picture in 4:2:0 color format. An integer transform is applied to a transform block and the level values of quantized coefficients together with other side information are entropy coded in the bitstream.
The terms coding tree block (CTB), coding block (CB), prediction block (PB), and transform block (TB) are defined to specify the 2-D sample array of one color component associated with CTU, CU, PU, and TU, respectively. Thus, a CTU consists of one luma CTB, two chroma CTBs, and associated syntax elements. A similar relationship is valid for CU, PU, and TU. The tree partitioning is generally applied simultaneously to both luma and chroma, although exceptions apply when certain minimum sizes are reached for chroma.

Adaptive loop filter with adaptive parameter set


A waveguide interface for a waveguide having a split ring with a first half and a second half joined by a web portion. The split ring first half and second half having an inner surface configured to mate with an exterior of the waveguide, the first half and the second half foldable towards each other and around the exterior of the waveguide, along the web portion. An overbody with a bore is dimensioned to receive the waveguide therethrough; the bore having a shoulder at an interface end dimensioned to receive the split ring.

1. Field of the Invention
This invention relates to waveguides and waveguide interconnection interfaces. More particularly, the invention relates to a waveguide interconnection interface with improved manufacturing cost efficiencies and ease of installation.
2. Description of Related Art
Waveguides are commonly used for transmitting electromagnetic wave energy from one point to another.
Waveguide interfaces field mountable upon a waveguide end via a mechanical clamping action are known. To retain the waveguide interface upon the waveguide end, a two part split ring with an inner surface that keys with corrugations of the waveguide exterior is fitted around the waveguide. The two part split ring is retained against the waveguide by an overhousing that the two part rings fit into, secured in place via a plurality of screws. The prior waveguide interfaces were sealed by a gasket positioned between the overhousing and the outer surface of the waveguide, compressed by the split rings as they are fastened against the overhousing. Once the waveguide interface is mounted, a protruding end of the waveguide may be flared against the split rings.
Where the waveguide corrugations are helical, each separate half of the prior split ring has a different inner surface for mating with opposing sides of the waveguide exterior, but otherwise has a similar appearance. This similarity creates a significant chance of erroneously delivering to the installer two identical split ring halves rather than the required two mating split ring halves, resulting in an unusable assembly. Also, mounting and retaining the split ring(s) around the waveguide prior to fastening within the overhousing is difficult. Prior waveguide interfaces sometimes applied an additional retaining band or o-ring gasket for this purpose. Groove features to accommodate the additional retaining band increase the size of the resulting waveguide interface. As a result, the overall weight of the assembly is increased along with spacing requirements alongside other equipment.
Another problem with the prior waveguide interfaces is the plurality of unique components and fasteners required. The plurality of small parts/fasteners creates an opportunity for delivery errors and or for the accidental loss of a part that may also generate a drop hazard. Any of which results in an unusable interface assembly at the point of installation.
The prior waveguide interfaces applied metal machining technologies to form the overhousing, split rings, threaded screw holes and the precision surfaces that key with the waveguide corrugations. Formed from metal alloys, such as brass, these assemblies have a significant materials cost and weight. Also, precision machining, co-ordination and inventory of each of these components are significant cost factors.
The increasing competition for waveguide interfaces has focused attention on cost reductions resulting from increased materials, manufacturing and installation efficiencies. Further, reductions in required assembly operations and the total number of discrete parts are desired.
Therefore, it is an object of the invention to provide an apparatus that overcomes deficiencies in the prior art.

Waveguide interface adapter and method of manufacture


A display screen apparatus having a viewing region and a peripheral region surrounding the viewing region includes: a light transmissive substrate having inner and outer surfaces; and a light cured material layer disposed on the inner surface of the light transmissive substrate and having a peripheral portion corresponding in position to the peripheral region of the display screen apparatus. The peripheral portion is formed with a plurality of pores therein.

1. Field of the Invention
The invention relates to a display screen apparatus, a touch screen assembly and a method for making the display screen apparatus.
2. Description of the Related Art
In order to create a framing effect, conventional display screens normally have an opaque frame layer formed on a peripheral region thereof. Conventionally, formation of the frame layer is conducted by screen printing with an ink material. However, the frame layer thus formed has a relatively high surface roughness (on the order of microns), which has an adverse effect (such as an increase in resistance) on transparent conductive lines of a touch sensing circuit that is formed on a surface of the frame layer and a surface of the display screen. Conventionally, the color of the frame layer can be black or white depending on the color of the ink material that is used. The white ink material normally includes a thermoset resin and a dye powder, such as titanium dioxide and barium sulfate, dispersed in the thermoset resin. Unlike the black ink material, the white ink material still has a low light transmissibility. Hence, a thicker layer thickness is required for the white ink material to form a completely opaque frame layer as compared to the black ink material. As a consequence, a higher height difference (about 15-20 μm) between a surface of the frame layer and a surface of the display screen is created for the white ink material, which tends to cause breaking of the transparent conductive lines at an interface between the surface of the frame layer and the surface of the display screen. In addition, the frame layer formed by screen printing techniques has a poor linearity at an edge of the frame layer. Moreover, the thermoset resin requires a longer curing time.

Display screen apparatus, touch screen assembly, and method for making a display screen apparatus


A D/A converter has a plurality of input terminals, a plurality of current switchers, an adder for adding together the output currents from the plurality of current switchers, and a current-to-voltage converter. The D/A converter receives, via its input terminals, digital sound signals modulated by the adaptive delta modulation method or the delta modulation method. Each of the current switchers outputs a predetermined current, and switches the direction of the current in accordance with the digital signal it receives via the input terminal. The output currents of all of the current switchers are first added together by the adder, and then converted into a voltage by the current-to-voltage converter.

1. Field of the Invention
The present invention relates to a digital-to-analog converter, and more particularly to a digital-to-analog converter based on the adaptive delta modulation method or the delta modulation method.
2. Description of the Prior Art
Digital-to-analog (hereinafter abbreviated to "D/A") converters based on the delta modulation method and D/A converters based on the adaptive delta modulation (hereinafter abbreviated to "ADM") method are used, for example, in karaoke apparatus. In such applications, D/A converters are used to mix a plurality of audio signals into one.
Conventionally, D/A converters of this type have an input terminal for receiving a first audio signal, an input terminal for receiving a second audio signal, current converters for converting digital audio signals received via those input terminals individually into current signals bit by bit, and current-to-voltage converters for converting the obtained currents individually into voltages. The two signals are eventually added together by a voltage adder. In such D/A converters, both the current-to-voltage converter and the voltage adder include an operational amplifier, and the current-to-voltage converter includes a capacitor as well. In this way, according to the prior art, the D/A converters need to be provided with two current-to-voltage converters, and thus with two capacitors, and this has been preventing cost reduction of such D/A converters.


A nonvolatile semiconductor storage includes a memory cell array provided with a plurality of memory cell transistors including a plurality of blocks and arranged in each block as a matrix with rows and columns, and with a plurality of N-channel transistors whose sources are connected to an auxiliary bit line common to the drains of the memory cell transistors of each column. A word line is connected to control gates of memory cell transistors of each row of the memory cell array in common. A main bit line is connected to drains of N-channel transistors of each column of the memory cell array in common. An X decoder includes a predecoder for selecting a predetermined word line in accordance with an input address, a block decoder for selecting a block by outputting a block selection signal to the N-channel transistor of a predetermined block in accordance with an input address, and a main decoder for selecting a predetermined word line in accordance with the output of the predecoder or the block decoder. The main decoder includes a first N-channel transistor whose drain is connected to a corresponding output of the predecoder, whose source is connected to one corresponding word line, and to whose gate a block selection signal is input for each word line, a first P-channel transistor whose drain is connected to a corresponding output of the predecoder, whose source is connected to one corresponding word line, and to whose gate the inverted signal of said block selection signal is input, and a second N-channel transistor whose drain is connected to one corresponding word line, whose source is grounded, and to whose gate the inverted signal of the block selection signal is input, for each word line.

The present invention relates to an electrically erasable programmable nonvolatile semiconductor storage (flash EEPROM).
A flash EEPROM has a memory cell transistor having a stack structure, in which data is written by channel hot electrons and erased by Fowler-Nordheim tunnel current. This type of memory requires an X (row) decoder for selecting a word line when writing or erasing data. However, data erasing for a conventional flash EEPROM is considered by assuming batch erasing of all bits and therefore, it cannot correspond to block erasing in a minute unit. Therefore, a memory realizing block erasing in a minute unit is proposed (official gazette of Japanese Patent Laid-Open No. 6-215591).
FIG. 5A is a block diagram of the flash EEPROM disclosed in the official gazette of Japanese Patent Laid-Open No. 6-215591) and FIG. 5B is a block diagram of the X decoder of the flash EEPROM.
The flash EEPROM comprises a memory cell array 41 in which memory cell transistors M00 to M11 are arranged like a matrix, word lines W0 and W1 connected to the control gate of the memory cell transistor of each row in common, bit lines B0 and B1 connected to the drain of the memory cell transistor of each column in common, an X decoder 42 for selecting a predetermined word line in accordance with an X address supplied from an external unit, and a Y decoder 43 for selecting a predetermined bit line in accordance with a Y address supplied from an external unit.
The X decoder 42 comprises a predecoder circuit (not shown), a NAND gate G41, an inverter gate IV41 for inverting an output signal of the NAND gate G41, and two transfer gates T1 and T2 respectively provided for each word line. Moreover, the transfer gate T1 comprises an N-channel MOS transistor Q41 and a P-channel MOS transistor Q42 and the transfer gate T2 comprises an N-channel MOS transistor Q43 and a P-channel MOS transistor Q44. Moreover, the NAND gate G41 and inverter gate IV41 are provided every predetermined number of word lines.
In outputs A0 and A1 of the predecoder circuit, a positive voltage (5 V for data read or 12 V for data write) is output from an output corresponding to a selected word line when data is read or written and -10 V is output when data is erased. Moreover, 0 V is output from an output corresponding to a nonselected word line when data is read or written and 3 V is output when data is erased.
Moreover, a voltage VWL supplied to the sources of the transistors Q43 and Q44 from a power supply (not shown) becomes 3 V when data is erased and becomes 0 V except the time when data is erased.
In the case of the above memory, because an "H"-level signal is input to every NAND gate G41 of a block including a selected word line, the output signal of the inverter gate IV41 of the block becomes "H"-level. Thereby, T1 of the transfer gates T1 and T2 is turned on.
Moreover, because an "L"-level signal is input to every NAND gate G41 of a block including a nonselected word line, the output signal of the inverter gate IV41 of the block becomes "L"-level. Thereby, T2 of the transfer gates T1 and T2 is turned on.
Thus, when data is read or written, a positive voltage (5 V for data read or 12 V for data write) supplied from the predecoder circuit is output to the selected word line through the transfer gate T1 and 0 V supplied from the predecoder circuit or an internal power supply is output to the nonselected word line through the transfer gate T1 or T2.
Moreover, when data is erased, -10 V supplied from the predecoder circuit is output to the selected word line through the transfer gate T1 and 3 V supplied from the predecoder circuit or the internal power supply is output to the nonselected word line through the transfer gate T1 or T2. Thus, it is possible to erase data in blocks including a plurality of word lines.
A voltage of 3 V is supplied to the nonselected word line when data is erased in order to apply a voltage higher than 0 V to the control gate of a nonselected memory cell transistor and decrease the potential difference between a source and a gate so that erroneous erasing (drain disturbing phenomenon) does not occur in the nonselected memory cell.

Nonvolatile semiconductor storage including main decoder with predecoder


A wire member 50 is received in a flexible part 22 of an endoscope 20 and adapted to remotely curvilinearly control a bendable part 27 at a distal end of the flexible insertion part 22. The wire member 50 includes a braid 51 braiding from a plurality of resin fibers and an adhesive agent 52 impregnated in the braid 51 and hardened. The impregnating and hardening of the adhesive agent 52 are carried out in a state where the braid 51 is applied with a tensile force having a predetermined magnitude.

In general, a soft endoscope is provided with a flexible insertion part. A distal end part of the insertion part is provided as a bendable part consisting of a plurality of joint rings arranged in a row. A single or a plurality of control wires (wire members) are received in the insertion part. A basal end part of the control wire is associated with a control knob of a main body of the endoscope. A distal end part of the control wire is associated with the joint rings arranged in a row on the bendable part. By tensioning the control wire through the control knob, the bendable part can remotely curvilinearly controlled.
Patent Document 1: Japanese Patent Application Laid-Open No. 2001-104239

Curvilinearly controlling wire member of endoscope and method for manufacturing the same


The turbine includes: a shaft body supported rotatably; a plurality of turbine blade members; a casing covering the shaft body and the turbine blade row; an outer ring member that is provided on an inner periphery of the casing and includes an inner peripheral portion in which a cross-section having a uneven shape is continuous in a circumferential direction; a plurality of turbine vane members that each has a shroud fitted into the inner peripheral portion of the outer ring member and a turbine vane main body extending from the shroud to a radially inward side; and a plate member that connects at least some of the plurality of turbine vane members and covers one side of the shrouds in the axial direction, thereby sealing a shroud gap formed between the shrouds adjacent to each other in the circumferential direction.

In the related art, there is known a steam turbine which includes a casing, a shaft body rotatably provided in the inside of the casing, a plurality of turbine vanes fixedly disposed at an inner peripheral portion of the casing, and a plurality of turbine blades radially provided at the shaft body in the downstream sides of the plurality of turbine vanes.
In PTL 1 below, a turbine vane structure ring is constituted by using a turbine vane member having a turbine vane element, an outer shroud element, and an inner shroud element, an outer ring in which a fitting groove is formed in the inner periphery and which is supported on a casing, and an inner ring in which a fitting groove is formed in the outer periphery and which surrounds a rotor.
Specifically, the turbine vane element is annularly retained by inserting and fitting the outer shroud element of each turbine vane member into the fitting groove of the outer ring and also inserting and fitting the inner shroud element into the fitting groove of the inner ring.

Turbine and method for manufacturing turbine


A double wrapper cigarette produced by a manufacturing machine and method according to the invention includes an inner wrapper (6) wrapped around a rod-like filler including a tobacco material, an outer wrapper (8) surrounding the inner wrapper (6), and a perfume emitting layer (10) provided between the inner wrapper (6) and the outer wrapper (8). The perfume emitting layer (10) includes a perfume material for weakening odor of sidestream smoke of the cigarette.

When a cigarette is smoked, sidestream smoke tends to give an uncomfortable feeling to not only a smoker but also people around the smoker, which prevents the smoker from enjoying smoking.
Considering this, cigarettes reduced in sidestream smoke have been developed. Cigarettes of this type include special additives in their wrappers. The special additives are effective in reducing sidestream smoke but often strengthen the odor of the sidestream smoke compared with standard cigarettes.
It is thought that the odor of the sidestream smoke can be weakened by adding a perfume material to a cigarette. Specifically, a perfume material can be added to the filler of a cigarette or seam glue applied on a wrapper thereof.
However, when a perfume material is added to the filler, the perfume material damages the filler's original aroma and taste. When a perfume material is to be added to seam glue, it is difficult to add a sufficient amount of the perfume material to the seam glue without lowering the adhesive force of the seam glue.

Double wrapper cigarette, machine and method for manufacturing the same


A beam coordinate system decided by a plurality of beam reference positions and a deflection coordinate system decided by a deflector in a multi-electron beam exposure apparatus are made to coincide in a highly precise fashion and exposure is performed upon rapidly correcting a change in the offset between the two coordinate systems with the passage of time. The apparatus has an adjusting unit for adjusting an XY stage or a deflector based upon a first parameter representing the relationship between the beam coordinate system, which is decided by the plurality of beam reference positions, and the design coordinate system, and a second parameter representing the relationship between the deflection coordinate system, which is decided by the deflector, and the design coordinate system.

This invention relates to an electron beam exposure apparatus and method of controlling the same. More particularly, the invention relates to an electron beam exposure apparatus for drawing a pattern on a wafer directly or on a mask or reticle using a plurality of electron beams, a method of controlling the apparatus, the associated control program and a method of manufacturing a device using this electron beam exposure apparatus.
Examples of electron beam exposure apparatuses include an apparatus of the point beam type which uses a beam in the shape of a spot, an apparatus of the variable rectangular beam type which uses a beam in the shape of a rectangular cross section, and an apparatus of the stencil mask type which uses a beam given a desired cross-sectional shape through use of a stencil mask.
The electron beam exposure apparatus of the point beam type is used exclusively for research and development purposes because of its low throughput. Though the electron beam exposure apparatus of the variable rectangular beam type has a throughput higher than that of the apparatus of the point beam type by one to two orders, many problems remain in terms of throughput when it is attempted to expose a pattern consisting of fine patterns on the order of 0.1 .mu.m integrated to high density. On the other hand, the electron beam exposure apparatus of the stencil mask type uses a stencil mask in which a plurality of repetitive pattern through-holes are formed at a portion thereof that corresponds to a variable rectangular aperture. As a result, the electron beam exposure apparatus of the stencil mask type is highly advantageous when exposing repetitive patterns. However, in the case of a semiconductor circuit that requires a multiplicity of transfer patterns that will not fit on a single stencil mask, it is necessary to produce a plurality of stencil masks in advance and use them by extracting them one at a time. Since changing masks takes time, a problem that arises is a very low throughput.
An apparatus which solves this problem is a multi-electron beam exposure apparatus which irradiates the surface of a sample with a plurality of electron beams along design coordinates of the surface, scans the plurality of electron beams across the sample surface by deflecting the electron beams along the design coordinates, and turns the plurality of electron beams on and off individually in conformity with the pattern to be drawn, thereby drawing the pattern on the surface. A feature of the multi-electron beam exposure apparatus is that throughput can be improved owing to the ability to draw any pattern without using a stencil mask.
FIG. 15 illustrates the general arrangement of the multi-electron beam exposure apparatus. The apparatus includes electron guns 501a, 501b, 501c whose electron beams can be turned on and off individually, a reduction electron optical system 502 for reducing the diameters of the plurality of electron beams and projecting the beams upon a wafer 503, and a deflector 504 for scanning the plurality of projected electron beams of reduced diameter across the wafer 503.
FIG. 16 illustrates the manner in which the plurality of electron beams are scanned across the surface of the wafer. The white circles in FIG. 16 are beam reference positions (BS1, BS2, BS3) at which the electron beams impinge upon the wafer when they are not deflected by the deflector 504. The beam reference positions are arrayed in a design rectangular coordinate system (Xs, Ys). Each electron beam is scanned in the design rectangular coordinate system (Xs, Ys) using the beam reference position as a reference, thereby scanning exposure fields EF1, EF2, EF3 of the respective electron beams. The wafer is exposed using the contiguous exposure fields of the electron beams.
When a deflection coordinate system (Xd, Yd) decided by the deflector is offset from the design rectangular coordinate system (Xs, Ys), however, the exposure fields of the electron beams come to overlap or separate, rather than remain contiguous, even through the beam coordinate system (Xa, Ya) decided by the plurality of beam reference positions coincides with the design rectangular coordinate system (Xs, Ys). This makes it impossible to draw the desired patterns. FIG. 17A illustrates the exposure fields in a case where the deflection coordinate system has been rotated with respect to the beam coordinate system. FIG. 17B illustrates the exposure fields in a case where the deflection coordinate system has been enlarged with respect to the beam coordinate system.

Electron beam exposure apparatus and method of controlling same


A communication apparatus is connected to an external apparatus in a connection mode selected from a plurality of connection modes including a first connection mode in which an external apparatus is connected in accordance with a predetermined operation on the communication apparatus and a second connection mode in which an external apparatus is connected in accordance with an operation whose operation amount is smaller than the predetermined operation. The communication apparatus has a plurality of operation modes to select at least one of contents saved in a recording medium. When connecting the external apparatus in the second connection mode, an operation mode in which the contents are selected based on the operation on the external apparatus is selected out of the plurality of operation modes.

Field of the Invention
The present invention relates to a communication apparatus and method of controlling a communication apparatus that is connected to another device.
Description of the Related Art
Apparatuses for implementing a content transmission system, which transmits a content from one apparatus to another apparatus by a wireless communication function, have recently been introduced into the market. There is known, for example, a digital camera having a wireless communication function and capable of wirelessly transmitting image data obtained by shooting to an external apparatus. The following two methods are considerable to select a content (image data) to be transmitted from such a digital camera to an external apparatus. In one method, image data to be transmitted to the external apparatus is selected on the digital camera side. In the other method, image data in the digital camera are opened to the external apparatus, and image data to be acquired is selected on the external apparatus side. Japanese Patent Laid-Open No. 2009-44251 (to be referred to as literature 1 hereinafter) discloses a digital camera that allows a user to select which one of the methods should be used.
In the technique disclosed in literature 1 described above, however, every time the camera is connected to the external apparatus, the user needs to select, on the camera side, whether to open image data, that is, whether to permit the external apparatus to select images in the camera.

This patent is subject to a terminal disclaimer.

Communication apparatus and method of controlling communication apparatus


A node in a mesh network includes insertion circuitry to selectively delay first packets prior to insertion in a mesh network by a first time interval corresponding to a maximum failure detection time interval for the mesh network based on whether a failure has been detected in the mesh network. The node includes reception circuitry configured to selectively delay second packets received from the mesh network by a second time interval depending on whether the failure has been detected. The second time interval equals a maximum latency for the mesh network minus a sum of the maximum failure detection time interval and a propagation time along a working path. If a failure is detected, the second packets are delayed by a third time interval determined based on the maximum latency, the maximum failure detection time interval, and a propagation time along a backup path for the working path.

Upcoming generations of communication systems, such as Fifth Generation (5G) communication systems and Industry 4.0, are expected to enable applications such as virtual reality, augmented reality, reliable remote operation of machines, factory automation, network-assisted control of traffic and self-driving vehicles, and the cellular "Internet of Things (IoT)" that supports internetworking of physical devices such as appliances, vehicles, buildings, and other items that are embedded with electronics, software, sensors, actuators, and network connectivity that enable the devices to collect and exchange data over the Internet. One key feature of 5G communication systems is Ultra-Low Latency Reliable Communication (ULLRC) that targets end-to-end latencies of 1 millisecond (ms) (e.g., to support factory automation applications) and reliabilities of at least 99.999% (e.g., for automotive traffic control applications such as platooning). Another key feature of 5G communication systems is that most of the signal processing is done in the network by cloud servers rather than close to the radio antennas that support wireless communication, e.g., with IoT devices. The cloud server architecture is referred to herein as Cloud Radio Access Network (C-RAN). The latency requirements for C-RAN are even more stringent: round trip time budgets are expected to be in the range of 200 to 500 microseconds (μs). Although described herein in the context of a 5G communication system, the C-RAN architecture is also implemented in other communication systems such as Fourth Generation (4G) communication systems. A third key feature of 5G communication systems is network slicing, which permits operators to allocate resources of all types (network, CPU, storage) to a given service, without interfering with other services provided by the system.

Dynamic shared protection using redundant network paths


Methods of detecting one or more parameters of a medium are disclosed. The methods include providing a waveguide grating device, contacting the waveguide grating with a medium, propagating a signal having at least one signal attribute through the waveguide, and comparing the modified signal attribute to a known signal attribute to detect a parameter of the medium.

1. Field of the Invention
The present invention relates generally to the field of optical filters and sensors. More particularly, it concerns the use of the guided-mode resonance effect occurring through the use of waveguide gratings attached to the endfaces of waveguides such as optical fibers in fields such as optical sensing and communications.
2. Description of Related Art
Resonance anomalies occurring in waveguide gratings (WGGs) have been the subject of current interest for spectral filtering applications [Magnusson and Wang, 1992; Wang and Magnusson, 1993; Wang and Magnusson, 1994; Shin et al., 1998; Tibuleac and Magnusson, 1997; Tibuleac, et al., 2000; Wawro, et al., 2000; Avrutsky, et al., 1989; Boye and Kostuk, 1999; and Rosenblatt, et al., 1997]. Guided-mode resonances (GMRs) occurring in subwavelength WGGs admitting only zero-order propagating diffraction orders yield spectral filters with unique properties such as peak reflectances approaching 100%, narrow linewidths, and low sidebands. Filter characteristics, such as center wavelength, linewidth and sideband behavior, are defined by the waveguide-grating parameters, such as grating period, grating profile, refractive indices, layer thicknesses, and grating fill factor.
Changes in any parameters of the diffractive structure can result in a responsive shift of the reflected or transmitted wavelength band. In general, for spectral filtering applications, the most stable GMR structure is sought to prevent an unwanted resonance shift due to small parameter fluctuations. However, for spectroscopic sensing applications, it is desirable to enhance the resonance instability to create a device that will respond to very small parameter changes. This type of device can be utilized, for example, to detect very small changes in the refractive index or thickness of a media being evaluated in biomedical, industrial or environmental sensing applications. Implementation of the guided-mode resonance effect for optical sensing using planar waveguide grating structures and free-space propagating incident waves has been proposed in previous publications [Wang and Magnusson, 1993; Shin et al., 1998].
Experimental fabrication of waveguide gratings utilizing the GMR effect has primarily been restricted to planar WGGs with an incident beam that is propagating in free space. Experimental results for 1-D grating GMR filters incorporate single layer and multilayer reflection filter designs, including a TM polarization reflection filter utilizing the Brewster effect [Magnusson, et al., 1998]. Double layer GMR filter efficiencies as high as 98.5% have been reported by Liu, et al. for TE incident polarization [Liu, et al., 1998]. GMR crossed grating structures (2-D grating filters) have been experimentally fabricated by Peng and Morris [Peng and Morris, 1996], with a reported filter efficiency of 60%. Norton et al. [Norton, et al., 1998] investigated the dependence of lineshape and tunability in central wavelength and resonant angle position on grating parameters.
Chen [Chen, 1988] reports a theoretical design incorporating a diffraction grating on an optical fiber endface that is used to excite higher order modes in multimode optical fibers. Wang et al. [Wang, et al., 1995] reports a fiber optic proximity sensor design incorporating a diffraction grating on a fiber endface. However, the diffraction gratings reported in these two references do not have waveguide properties, and, consequently, do not exhibit the GMR effect.
A biosensor is an analytical device that integrates an immobilized biologically sensitive material (analyte), such as enzyme, antibody, DNA, cells, or organic molecules, with an electrochemical, piezoelectric, optical or acoustic transducer to convert a biochemical response into a signal for measurement, interpretation, or control. Electrochemical and optical sensors are most widely used. Optical biosensors can provide fast, accurate, and safe analyte detection. Current fiber-optic sensor technology applies fluorescence, total internal reflection, intensity reflection, and surface-plasmon resonances.
The surface plasmon resonance (SPR) effect, is a widely used optical detection method that is highly sensitive to changes in the optical properties (refractive index, monolayer thickness) at the sensor surface. The term surface plasmon (SP) refers to an electromagnetic field charge-density oscillation that can occur at the surface of a conductor. An SP mode can be resonantly excited by parallel-polarized (TM) incident light. Conventional surface plasmon sensors include a prism or diffraction grating for phase matching of the incident and SP waves; commercial systems employ bulk optical components. Fiber-optic SPR sensors have been reported; in these a metal sleeve is deposited on the side of the fiber to which the analyte is contacted. A drawback of the SPR technology is the inherently large linewidth; typically Δλ˜50 nm. Therefore, a sensor utilizing the GMR effect that would provide smaller linewidths would exhibit a significant resolution dynamic-range advantage over SPR sensors.

Methods for using resonant waveguide-grating filters and sensors

Board of Regents, The University of Texas System


An automated control system for a dual-fuel boiler, engine, or other apparatus continuously monitors the consumption of a primary fuel source and automatically switches from the primary fuel source to a secondary fuel source when a predetermined amount of the primary fuel is used in a measured time period, the object of the system being to automatically maintain a 100% load factor of the primary fuel source. A meter continuously monitors consumption of the primary fuel and outputs an electronic flow signal representing consumption of primary fuel. The flow signal is received by a programmable logic controller having a real-time clock whereby consumption of the primary fuel is measured against time. Remote control actuated ball valves mounted in the primary and secondary fuel lines selectively control the flow of primary and secondary fuels to the dual-fuel apparatus. The programmable logic controller is programmed with a measured time period, and a 100% load limit of fuel consumed during the given time period. The programmable logic controller sums the flow signal over the measured time period and automatically controls switches from the primary fuel to the secondary fuel when the 100% load limit is achieved. When the measured time period expires, the logic controller reverts the system back to the primary fuel and starts the measured time period over.

The instant invention relates to control systems for managing and controlling multiple energy sources.
Commercial, industrial and institutional consumers of energy commonly utilize multiple energy sources to minimize energy costs and ensure security and availability of their energy supply. For example, a predominantly natural gas consumer may store volumes of an alternate fuel, such as a diesel fuel or fuel oil, which may be used to fire process or heating equipment in the event that the gas supply is interrupted, or if the procurement costs of natural gas rises above that of the alternate fuel. Equipment at the facility is usually equipped with appropriate means for introducing either type of fuel to the equipment. Such equipment is usually referred to as a dual-fuel device.
With regard to fuel cost, the cost of a distributed energy source, such as electricity or natural gas, is often related to the stability of a customer's utilization of that fuel. For instance, a consumer of electricity often pays a "demand" charge which reflects the difference between his peak usage and base consumption of electricity. The demand charge is generally interpreted as a capacity charge paid by the consumer for excess capacity to be reserved for the few times it is utilized.
A similar premium rate structure typically exists for a natural gas customer who generates seasonal or process related peak rates of consumption which are significantly higher than their base consumption rates. The difference between a natural gas customer's peak and base consumption rates is typically referred to as a "load factor." A customer that consumes 1000 Mcf natural gas daily for the months of December, January, and February and then only 700 Mcf natural gas daily for the remaining nine months of the year would be determined to have a load factor of 70%. Based on a load factor of 70%, the customer's natural gas procurement cost might be $5.00/Mcf. If the customer's load was stable all year round at 700 Mcf daily consumption, the load factor would be 100% and the customer's natural gas procurement cost could drop to $3.80/Mcf. The reasons for the difference in cost is that the supplier of the natural gas can predict his customer's consumption more accurately which, in turn, allows him to purchase, and subsequently supply relatively precise volumes of gas at "firm rates", and therefore, demand charges are minimized. Natural gas consumers are thus becoming increasingly more aware of the benefits that can be realized by managing their load factors more efficiently.
The instant invention provides an automated control system for monitoring a primary fuel source of a dual-fuel apparatus, and for automatically switching from the primary fuel source to a secondary fuel source when a predetermined amount of the primary fuel is used in a measured time period, the object of the invention being to automatically maintain a 100% load factor of the primary fuel based on the measured time period. The control system generally includes a meter mounted in the primary fuel line for continuously monitoring consumption of the primary fuel and for outputting an electronic flow signal representing consumption of primary fuel. The flow signal is received by a programmable logic controller having a real-time clock whereby consumption of the primary fuel is measured against time. The control system further includes remote control actuated valves mounted in the primary and secondary fuel lines for selectively controlling the flow of the primary and secondary fuels to the dual-fuel apparatus. The programmable logic controller is programmed with a set of control parameters, including a measured time period, and a 100% load limit of fuel consumed during the given time period. The programmable logic controller sums the flow signal over the 24 hour period and automatically controls actuation of the first and second valves to switch from the primary fuel to the secondary fuel when the 100% load limit is achieved. When the 24 hour time period expires, the logic controller actuates the valves to revert back to the primary fuel and starts the measured time period over. The present system thereby provides the ability to automatically maintain a consistent daily use of the primary fuel source.
In the preferred embodiment as described in detail herein, the control system is utilized in connection with a dual-fuel steam boiler, wherein the primary fuel is natural gas, and the secondary fuel is fuel oil. The meter is operative for measuring natural gas flow and generates a scalable pulse-train signal which is generated proportionately with gas consumption. The programmable logic controller is utilized to receive and sum over a 24 hour period the volume proportional pulse-train signal emitted by the gas meter. When the time based volume of gas has reached a predetermined load limit, the flow of gas to the boiler is stemmed by closing the valve in the primary gas line, while a flow of oil is initiated by opening the valve in the secondary oil line. The boiler then operates on the fuel oil until a new period of measurement is initiated, or until the system is manually overridden. The system then reverts back to natural gas fuel when the new measured time period commences.
Accordingly, among the objects of the instant invention are: the provision of an automated control system for managing multiple energy sources to maintain a 100% percent load factor of a primary fuel source; the provision of an automated control system for monitoring a primary fuel source and for automatically switching from the primary fuel source to a secondary fuel source when a predetermined amount of the primary fuel is used in a measured time period; and the provision of such a control system which is particularly useful in connection with the management of natural gas consumption rates.
Other objects, features and advantages of the invention shall become apparent as the description thereof proceeds when considered in connection with the accompanying illustrative drawings.

Automated control system for managing multiple energy sources


A leak detection device operable to measure fluid leaks in an element to be tested that is positioned in a first enclosure. In one example, a measuring module is positioned in a second enclosure and connected to the first enclosure and the element to be tested by an aeraulic connection. At least one of the first enclosure and the measuring module are thermally insulated using an insulating material.

Indeed, it is necessary to be able to check the integrity of parts and/or to check whether the latter have a leak and to be able to quantify it. The products/parts to be tested are for example electronic appliances, mechanical parts, containers, etc., tightness being a critical characteristic in the context of products subject to external stress and/or required to meet particular operating requirements, such as that of being impermeable to liquids (such as water) or of not having leaks liable to degrade the performances of the product, etc.
Furthermore, the method "by pressure variation" (or variation of a related physical quantity, such as the flow rate) is the quickest and most economical method. Indeed, in the pressure variation method, the object to be tested is subjected to a controlled pressure variation, i.e. a pressure variation is applied to an internal volume of the object (so-called direct method) or to a closed volume surrounding the object to be tested (so-called indirect method). Then, after a defined time, the pressure is measured again, if the object has a leak, then the pressure measured is different from the initial pressure.
The pressure variation measured by the pressure sensor of the device thus makes it possible to check the tightness of an object and quantify a leak if the object is not impermeable.
It is thus critical to have a pressure (or flow rate) sensor capable of measuring small pressure (or flow rate) variations and thus detect small leaks.
Nevertheless, the measurements made with this type of device can be influenced by environmental factors or intrinsic factors to said device. These factors are all the more impacting when it is sought to determine low leak levels on objects having large volumes, such as electric, particularly motor vehicle, batteries. Indeed, in the case of large volumes and low leak levels, the variations related to the temperature of the environment or of the element to be tested can give rise to pressure variations of an order of magnitude substantially equal to the level of the leaks that it is sought to detect.


A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.

1. Field of the Invention
The present invention relates to a distributed Bragg reflector (DBR) structure, a method of manufacturing the same, and a vertical cavity surface emitting laser (VCSEL) diode with the DBR structure. More particularly, the present invention relates to a DBR structure having an InAlAs/InP/InAlAs layer stacked on an InAlGaAs layer in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode with the DBR structure.
2. Discussion of Related Art
Semiconductor laser diodes, in general, include edge emitting laser diodes and VCSEL diodes. An edge emitting laser diode has a cavity structure parallel to a stack surface of a device and emits a laser beam parallel to the stack surface. A VCSEL diode has a cavity structure perpendicular to a stack surface of the device and emits a laser beam perpendicular to the device's stack surface.
VCSEL diodes are widely used in optical communications, optical data writing, and holographic memories because they have a low driving current and a low beam divergence compared to edge emitting laser diodes. VCSEL diodes can oscillate in a single longitudinal mode and can be easily manufactured and tested in a wafer state, resulting in superior characteristics compared to edge emitting laser diodes. Additionally, since VCSEL diodes are capable of high-speed modulation and can emit a circular beam, they are easily coupled to an optical fiber and can be arranged in a two-dimensional array.
Meanwhile, a semiconductor laser diode has three necessary components for laser oscillation by stimulated emission: (i) an optically active layer, (ii) a cavity region, and (iii) mirrors. In particular, a VCSEL diode has a high reflectivity DBR structure that functions as a mirror at both sides of the cavity region having the optically active layer.
Usually, a DBR structure applicable in a VCSEL diode consists of two material layers with different refractive indices, and the material layers are alternately stacked to have a thickness of ¼ of the laser wavelength. In order to obtain high reflectivity, there should be a large difference between the refractive indices of the two materials. Therefore, GaAs and AlAs which have quite different refractive indices and are capable of being lattice-matched are widely used. A VCSEL diode manufactured using GaAs is adequately employed in a short wavelength (1 μm or less) laser diode.
Also, a method of manufacturing an optical communication device for medium and long distance transmission that emits a long wavelength (for example, 1.3 μm or 1.55 μm) beam having minimal loss in an optical fiber has been suggested. E. Hall et al. have suggested a VCSEL diode having a bandwidth of 1.55 μm using an AlAsSb/InAlGaAs DBR structure and an AlAsSb/AlGaAsSb DBR structure, which are based on Sb and have a large refractive index difference of about 0.43-0.44 (E. hall et al., Electron. Lett. 35, 425 (1999) and Electron. Lett. 36, 1465 (2000)). However, in the case of manufacturing a Sb-based laser diode, there are disadvantages such as complexity in growing the material layers forming a DBR structure, low thermal conductivity, and reduced device reliability.
In addition, a laser diode manufactured on an InP substrate using InP/InGaAsP and InAlGaAs/InAlAs has been suggested. The diode has a relatively small refractive index difference between the two materials (0.27 and 0.3) and thus does not easily yield high reflectivity. Also, if stack periods of InAlAs/InAlGaAs are repeated, defects are formed on the DBR structure's surface as its thickness increases, resulting in deterioration of device quality. Therefore, recently, an InP-induced InAlGaAs/InP DBR structure that has a relatively large refractive index difference (0.34) compared to InP/InGaAsP and InAlGaAs/InAlAs, and good thermal conductivity, has been suggested. However, when a thin film is grown by combining these two materials, an As carry-over effect occurs after growth of the InAlGaAs layer and prior to growth of the InP layer, a thin film growth interface between the two materials is not even, and thus a transitional layer such as an InAsP layer may be produced. Therefore, a complicated growth interruption is used to manufacture an InAlGaAs/InP DBR structure having a high quality epitaxial characteristic (T. C. Lu et al., Journal of Crystal Growth., 250, 305 (2003); T. C. Lu et al., Material Sci. & Eng. B107, 66 (2004)).
Below, an InAlGaAs/InP DBR structure forming a VCSEL diode and problems associated with its composition will be described in detail with reference to the drawings.
FIG. 1 is a schematic side cross-sectional view (a) of a conventional vertical cavity surface emitting laser (VCSEL) diode including an InAlGaAs/InP DBR structure, and a diagram (b) illustrating a vertical cavity surface emitting energy band of the VCSEL diode.
Referring to FIG. 1, a conventional VCSEL diode 100 includes an InP substrate 110, a lower DBR structure 120 disposed on the InP substrate 110, a cavity 130 disposed on the lower DBR structure 120, and an upper DBR structure 140 disposed on the cavity 130.
The cavity 130 includes a pair of InP layers 131 serving as a guide layer and a clad layer of an optical field, and an active layer 132 interposed between the InP layers 131. The active layer 132 includes a pair of barrier layers 133 contacting the InP layers 131 and a quantum well layer 134 interposed between the barrier layers 133. The depth (d) of the cavity 130, if a laser wavelength is denoted by λ, generally is d=(k+½)×λ (k=an integer). The quantum well layer 134 of the cavity 130 formed as mentioned above may have a maximum electric field strength. The cavity 130 of FIG. 1 is just an example, and various structures such as a tunnel junction have recently come under study.
The DBR structures 120 and 140 disposed on and under the cavity 130 have a form of alternating stacks of InAlGaAs layers 121 and 141 and InP layers 122 and 142. In general, if a wavelength is λ, and refractive indices of two materials are n1 and n2 respectively, thicknesses of the InAlGaAs layers 121 and 141 and InP layers 122 and 142 are λ/4n1 and λ/4n2, respectively. When the DBR structures are manufactured with a combination of the InAlGaAs layers 121 and 141 and InP layers 122 and 142, compositions of the InAlGaAs layers 121 and 141 should have the largest possible difference in refractive index from the InP layers 122 and 142, and energy band gaps of the InAlGaAs layers 121 and 141 should be larger in order not to absorb light at the wavelength of the active layer 132.
In the InAlGaAs/InP DBR structures 120 and 140, GaAs and AlAs are lattice-matched, and In0.52Ga0.48As is lattice-matched to the InP substrate. For this reason, in the InAlGaAs material, when a composition ratio of [Ga+Al] is selectively changed within about 48% depending on usage while a composition ratio of In is about 52%, the InAlGaAs material can be lattice-matched to the InP substrate. In the case that the DBR structures 120 and 140 are employed in a VCSEL diode having a wavelength of 1.55 μm, as the composition ratio of Ga in In0.52AlGaAs increases, the photoluminescence wavelength becomes longer and the refractive index difference from InP increases while the lattice-matching to InP is maintained. So, there is no difficulty in adopting an InAlGaAs composition. Consequently, with the InAlGaAs 121/InP 122 DBR structure, high reflectivity can be obtained even with only about 35 stack periods.
However, because wavelength and refractive index are inversely proportional, in the case of employing the DBR structure having the above composition in a VCSEL diode having a wavelength of 1.3 μm, it is not easy to set the composition of the InAlGaAs material. For example, when InAlGaAs having a wavelength of about 1.2 μm, which does not overlap a wavelength of 1.3 μm, is chosen, the InAlGaAs is joined to InP in a band line-up of type II, not type I. For this reason, a transition wavelength may broadly range from 1.28 to 1.3 μm, thereby overlapping the 1.3 μm laser wavelength. In this case, a photon produced from the active layer of the VCSEL diode having a laser oscillation wavelength of 1.3 μm round-trips in the multiple-period DBR layer without reflection gain. In result, the photon is taken by an absorption band formed by the type-II band line-up, and thus overall performance of the laser diode deteriorates.
Referring to (b) of FIG. 1, type-II band line-up is formed in the in AlGaAs/InP DBR structures 120 and 140. In the case that the InAlGaAs/InP DBR structure 120 is employed in the VCSEL diode using a wavelength of 1.3 μm, the stacking period of InAlGaAs/InP should be increased in order not to form an absorption band corresponding to around the laser oscillation wavelength in the DBR layer. Also, selecting InAlGaAs, which has a relatively short wavelength, requires that the number of stack periods of the DBR structure be increased to obtain high reflectivity.
For example, InP (refractive index: about 3.2) and InAlGaAs (refractive index: about 3.4) used in the VCSEL diode oscillating at 1.3 μm have thicknesses of about 101.6 nm and about 94 nm, respectively. Thus, there should be at least 48 stack periods in order to obtain a high reflectivity of at least about 99.5%. As such, since increasing the stack periods may cause deterioration of properties of the device due to formation of defects on its surface, a composition of InAlGaAs having a wavelength as close as possible to an oscillation wavelength should be selected to reduce the number of stack periods of the DBR structure.
FIG. 2A is a graph plotting photoluminescence intensity and reflectivity according to a wavelength of an InAlGaAs/InP DBR in accordance with a conventional art. And, FIG. 2B is a diagram illustrating emission/absorption transition occurring due to type-II band line-up in a conventional InAlGaAs/InP junction. Considering only compositions of InAlGaAs layers 121 and 141 having a wavelength of 1.2 μm, since a photoluminescence (PL) wavelength is 1.2 μm, reflectivity should not be affected. However, an actual PL wavelength produced by forming a junction with InP layers 122 and 142 is 1.29 μm because of type-II transition, as shown in FIG. 2B. Accordingly, in a PL wavelength region, a stop-band of reflectivity is not maintained at a high level of reflectivity and reflectivity drops to form a deep. Consequently, photons produced from an active layer 132 of a 1.3 μm VCSEL diode are absorbed while traveling through the DBR structure, such that overall efficiency of the laser diode deteriorates and the wavelength of the laser changes depending on the temperature, which can have a critical, adverse effect on characteristics of the device.

Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode

Electronics and Telecommunications Research Institute


The invention relates to a recoilless hammer which comprises a hammer head (2) having a handle seat (4) and a hammer handle (3) to be inserted in said handle seat (4). The handle seat (4) is completely covered in the peripheral direction by an elastic material (5). The end of the hammer handle (3) facing the handle seat (4) is provided with a metal sleeve (7) which is seated with its sleeve end (8) in the material (5) and which is provided with a sleeve collar (12) and, at its free end, with a chamfered section (13) for insertion between securing webs of the handle seat (4).

Such recoilless hammers are widely used by professional tradesmen, since they allow a workpiece to be struck without a strong recoil. This very powerful compensation, or even complete elimination, of the recoil is achieved, for example, by a design of the hammer head as a hollow structure in which is provided heavy shot, for example small metal balls that because of their inertia strike the front (in the striking direction) inner side of the hammer head with delay after the time when the outer striking surface of the hammer head strikes the workpiece, thereby transmitting a shock directed in the direction opposite the recoil to the hammer head which just compensates for the recoil. Such recoilless hammers have proven to be advantageous in practice, although technical development efforts have been made to provide recoilless hammers having solid hammer heads. To this end, U.S. Pat. No. 6,739,218 has proposed connecting the hammer head to the hammer handle via a pivot, a spring being provided between the hammer handle and the hammer head which counteracts rotation of the hammer head about the pivot relative to the hammer handle. A disadvantage of such a recoilless hammer is the unstable connection between the hammer head and the hammer handle, which leads to uncertainty by the user as to whether the hammer head is permanently connected to the hammer handle with load capability, or might represent a hazard.


Disclosed are a nano fiber reinforced composite and a method of manufacturing the same. A spinning dope (nano fiber forming spinning dope) having a viscosity capable of fiber formation upon electrospinning and a spinning dope (spinning dope for matrix) having a viscosity incapable of fiber formation upon electrospinning are electrically spun onto the same collector with a high voltage applied thereto through different nozzles of the same nozzle block with a high voltage applied thereto. In the nano fiber reinforced composite, nano fibers are uniformly arranged between matrix components with no fibers formed therein, the nano fibers being arranged at an orientation angle of 90° or less relative to the longitudinal axis of the composite material. The nano fibers used as reinforcing material can be uniformly distributed within matrix components by a single procedure, and the contact area between the nano fibers and the matrix components are very large because the diameter of the nano fibers used as reinforcing material is small.

Generally, composites, such as artificial leather, in which nano fibers used as reinforcing materials are dispersed in matrix components have been prepared in such a manner that a nonwoven fabric is prepared from nano fibers, and then a solution with the matrix components dissolved in a solvent is impregnated or sprayed into the nonwoven fabric by an additional procedure.
However, the above conventional method requires an additional procedure of impregnating or spraying the matrix components into the nonwoven fabric, which makes the procedure complex and which have limitations in allowing the matrix components to be uniformly distributed between the nano fibers.
More specifically, the conventional method of preparing artificial leather, which is an example of composites, will be described. A composite fiber, made by conjugated-spinning the fiber forming component and the extracting component in a sea-island type or division type in order to make fibers ultrafine, is cut to prepare staple fibers, the staple fibers are laminated in the form of a web and needle-punched to prepare a nonwoven fabric, a polyurethane solution dissolved in a solvent of dimethyl formamide or the like is impregnated in the nonwoven fabric, and then the extracting component in the nonwoven fabric is dissolved out by treating the nonwoven fabric with a solvent such as caustic soda, thereby preparing artificial leather.
The above conventional method of preparing artificial leather has problems like a small contact are between the fibers and the matrix components (polyurethane) because the procedure is not continuous and it is difficult to make the diameter of the fibers 1 micrometer or less.
As another method of preparing a fiber reinforced composite, U.S. Pat. No. 4,511,663 suggests a method of dispersing carbon fibers coated with a metal in matrix components of glass or glass-ceramics or the like by a reinforcing material.
Additionally, U.S. Pat. No. 5,725,710 suggests a method in which a continuous filament is passed through a solution with thermoplastic powder dispersed in water, the water is removed, and the thermoplastic powder is melted onto the continuous filament. U.S. Pat. No. 6,818,288 suggests a method of positioning layers of woven fiber fabric in matrix components, such as carbon, by reinforcing material.
However, the above conventional methods are not continuous, and the composites are not reinforced with nano fibers, thus the contact area between the matrix components and the reinforcing material is small, thereby deteriorating the physical properties such as resistance to deformation.
To solve the conventional problems, it is an object of the present invention to prepare by a continuous and simple procedure a composite which is superior in physical properties due to a large contact area between matrix components and reinforcing material (nano fibers).

Composite material reinforced with nanofiber and method of manufacturing for the same

Industrial Cooperation Foundation Chonbuk National University


A rotor for a six-pole electromagnetic clutch includes an outer pole ring and an axially facing disc. The disc is formed with two circumferentially extending and radially spaced rows of circumferentially spaced slots, there being short circumferentially extending bridges between adjacent slots in each row. To strengthen the bridges against failure under high load and heavy wear conditions, a stainless steel reinforcing ring is brazed to the outer pole ring and the disc and transmits torque between the two. The outer edge of the disc thus may be spaced radially inwardly from the outer pole ring to establish an annular air gap which coacts with the two rows of slots to enable the rotor to possess the requisite magnetic characteristics to function in a six-pole clutch.

This invention relates to a rotor for an electromagnetic coupling such as an electromagnetic clutch or brake. Rotors of the same general type of that of the present invention are disclosed in Booth et al U.S. Pat. No. 5,036,964 and Brown et al U.S. Pat. No.5,125,255. The Booth et al patent also discloses one version of an electromagnetic clutch with which the rotor may be used.
A clutch rotor is made of low magnetic reluctance material and typically includes an inner hub, an axially facing disc formed integrally with and projecting radially outwardly from the hub, and an outer pole ring or flange at the outer periphery of the disc. The outer flange either defines or supports a pulley which coacts with a belt for driving the rotor. In the rotor disclosed in the Booth et al patent, the outer flange is brazed, welded or otherwise secured to the outer periphery of the disc while, in the rotor disclosed in the Brown et al patent, the outer flange is formed integrally with the outer periphery of the disc.
The electromagnetic clutch disclosed in the Booth et al clutch is a six-pole clutch which is capable of developing relatively high torque even though the clutch is comparatively compact in a radial direction. The rotor disclosed in the Brown et al patent also is for use with a six-pole clutch. Typically, a rotor for a six-pole clutch is made by forming three circumferentially extending and radially spaced rows of circumferentially spaced slots through the disc of the rotor, there being relative narrow connecting bridges between the slots of each row. The slots form air gaps of high magnetic reluctance in the disc and, when the rotor includes three radially spaced rings of air gaps, the rotor possesses the necessary magnetic characteristics to cause the clutch to be a high torque six-pole clutch.
A rotor with three radially spaced rows of circumferentially spaced slots functions adequately in many applications of the clutch. In certain high inertia applications, however, such as where the clutch is being used to drive an engine cooling fan of large diameter, the rotor is subjected to high bending forces and to high wear. Under such conditions, the comparatively weak bridges between the slots tend to shear and produce failure of the rotor.


The present invention is directed to a system and methods for analyzing dependencies. The dependencies that may be analyzed include, for example, dependencies among methods or procedures in software source code, or in system configuration or deployment. A layered system is provided, comprising a back-end layer, abstraction layer and user interface layer are used to derive dependency information from third-party tools, and present the information through uniform interfaces to a user-interface layer. The system maintains a dependency model as a hierarchical graph structure in computer memory, and provides a plurality of user views which may be manipulated actively or passively by the user. Active manipulations are propogated through the back-end layer to modify the system analyzed, and passive manipulations affect the user views without changing the analyzed system. The system provides advantages to users seeking to understand complex systems with many dependencies.

One of the major problems in software development and maintenance is that of keeping track of the structure of the code so that changes may be made and, more generally, that the operation of the software may be understood.
Very often, too few developers know a particular application's source code and it's vagaries sufficiently well to be able to make changes quickly. The code itself is either poorly structured and/or documented, usually as a result of being rushed into production, or because the code has been patched or layered too often without sufficient consideration. Even when code is properly structured and documented it can be equally difficult for someone to appreciate this fact without weeks of research. Before ever a line of code is touched, man weeks and months of effort go into understanding the application's innards. Difficult questions about which classes are grouped together as a component, which classes inherit from one another, which pieces of code pass parameters to one another, etc., all need to be answered before code is altered. The reason for this is that making a change in one part of the application can bring on changes in multiple other locations, and quite frequently unit testing of the code that has been changed may be insufficient, and more extensive regression or even system testing may be needed. This costs a lot of money, assuming that resources are available in the first instance. It also assumes that the human resources will continue in position for a sufficient period of time to understand the application so as to be able to make changes quickly. Programmers usually use text based editors to view code and make changes. Their managers normally understand the scope of developer's tasks by asking for diagrams, and discussing program source code attributes such as the number of lines of code, function points, number of classes etc. This normally takes place in meeting rooms using flip-charts which are pinned on the wall and used as references which of course change as time progresses. This is a time-consuming and inaccurate method for communication common and sharable information.
Traditional engineering practices that work well for hardware engineering have difficulty in dealing with software. Such practices involve a "top-down" (or more generally, spiral) process that produces design artifacts before manufacturing starts.
The closest analogy to "instructions for manufacturing" that applies to software are formal specifications. Formal specifications precisely define what software components should do without specifying how they are implemented. In principle this gives both programmers and testers descriptions from which to work independently.
Specification-driven development and testing is useful for applications in aerospace or the military with stable requirements, high reliability demands and few budget restrictions. This approach is not cost-effective for the majority of software projects.
The generally accepted "best practice" for mainstream software development is the spiral or iterative model used with the Unified Modelling Language (UML). This approach builds the product by incrementally analysing, designing, implementing and testing a set of use-cases. Each iteration results in an updated UML model and the corresponding executable software and test cases.
Many developers that have used the iterative/UML approach would agree that it adds a degree of rigour to the process, and that the UML diagrams serve as a useful roadmap and concise shorthand for the underlying source code.
However, the cost and effort required to introduce UML may not always be justified by the benefit. It is an invasive method that requires a lot of training and change of work practices, which are not easily accomodated in gradual fashion. Models must be generated for all work in progress. The software industry is very time-sensitive, and schedule pressures mean that the delay today for a potential future gain cannot be tolerated.
The usefulness of UML models is also limited because the notion that there is a single design (albeit one that evolves) that serves all purposes throughout the life of the development is flawed. In reality each member of the development team, be they architect, designer, implementer, integrator, manager, teamleader, tester, configuration manager, project manager, product manager, etc., each require their own view of the software "design". The required view continually changes as the individual's activity changes. All these views must be accurate and consistent with some common underlying reality. Current UML tool offerings do not support such a dynamic, interactive, multi-view based usage, and this partly explains why there is not universal enthusiasm for UML modelling.
In an attempt to reduce the risks and costs while keeping the benefits, many organizations use UML as a reverse-engineering technology. This way, fewer staff need to be trained in the use of the method and tools. The diagrams are reverse engineered from the source code, and design documentation is produced after the product is implemented.
In principle this is a reasonable approach. In practice, most UML tools are really designed for forward engineering. While they do provide reverse (or "round-trip") engineering functionality, it is assumed that any changes from the model are relatively few and that the user can reasonably update the model organisation and layout manually.
This is certainly not the case for a large pre-existing or in-progress software project for which no model has ever been generated. Organising a reverse-engineered model using a forward-engineering tool is extremely laborious and is unlikely to either reflect the design intended by the developers, nor to expose an optimal inferred design.
Specialized reverse engineering tools offer the ability to parse existing source code and to provide the programmer with detailed information not readily available from the the source code. This is typically cross-reference or similar information. Although such tools sometimes claim to aid software comprehension, the information they provide is too detailed to help with "design-level" comprehension and is more suited to programming, debugging and maintenance activities.
There is clearly a rift between the available design technology and the needs of the development community. On offer is a choice between expensive, invasive, relatively static, forward-biased design tools and low-level, implementation-biased reverse-engineering tools. There is little or no tool support that addresses the status quo of mainstream software development.
The state of the art is schematically illustrated in FIG. 5, which represents a histogram of the proportion of software developers versus the relative degree of forward- or reverse-engineering used to develop software. As described above, formal specification is a rigorous forward-engineering practice used by relatively few developers. Round-trip UML design is a somewhat less rigorous forward-engineering practice used by a substantial population of programmers, but not by the majority. Source analysis 103 is a reverse-engineering practice only sometimes used in software development. The majority of developers representing most of the area under the histogram are under-served by existing technologies.
There is thus a need for a technology and notation that can be applied to existing or in-progress software development projects without the need for extensive training or change of work practices and minimal negative impact on on-going work. There is also a need for such a technology to support both large-scale reverse-engineering as well as efficient inference of relevant essential design information. A system that can provide highly interactive and dynamic views is needed, to enable individuals to expose and focus on information that pertains to the task in which they are engaged. Such a system should not simply construct static designs, but rather allow users to actively engage with the software, simultaneously exposing specific information and increasing overall comprehension.

System and method for computer-aided graph-based dependency analysis


In a tape drive for storing and retrieving information to and from a media, a system for optimizing write performance includes a tape head and a controller. The tape head may include a write element. The controller may be for optimizing write performance in response to at least one media information signal that is stored on a media cartridge.

1. Field of the Invention
The present invention relates to a system and a method for tape data storage system read/write optimization.
2. Background Art
Competition from various alternative data storage technologies (e.g., magnetic disk, optical disk, etc.) has pushed magnetic tape data storage technology to achieve increasingly higher cartridge data capacities and transfer rates. In order to reach these increasingly higher levels of performance, the technologies employed in tape drives and tape cartridges have grown more complex. Tape drive and tape cartridge operating points have become more aggressive and utilize higher track and linear recording densities, thinner media, etc.
Tape system error rate performances for "read" and "write" operations are a measure of overall drive operational health and as such are affected by virtually all aspects of the system. Tape system error rate performances affect the design choices of drive and media operating points, as well as drive set up and adjustment in manufacturing. Furthermore, error rate is affected by subsequent maintenance issues such as mechanical alignment stability, wear, the affect of accumulated tape media debris within the tape path and operational environmental conditions.
Increasing error rate leads to an increasing number of operational retries. Delays associated with the retries impact overall data handling throughput of the drive and the associated system. An elevated error rate may cause the drive to skip sections of media resulting in decreased storage capacity. Further error rate increases can prevent the drive from processing any data. As the choice of drive operating point utilizes increasingly higher data densities (i.e., track densities and linear densities) the sensitivity of the error rate to all the above listed characteristics typically increases. Other removable storage media (e.g., magnetic disks, optical disks, etc.) can experience similar system performance issues.
Many of the design points of the drive and manufacturing adjustments to the drive are fixed and as such represent a compromise for satisfactory operations (and the associated error rates) over some nominal range of conditions. A tape drive system having changeable design points and adjustments may better optimize a particular operational condition or circumstance the drive was experiencing and provide an opportunity for lower error rates and an accompanying improvement in system performance.
Thus there exists an opportunity and need for an improved tape drive system and method that provides periodic, dynamic adjustment of drive parameters to capitalize upon system operations optimized for drive and for media conditions.

System and method for read/write optimization