Virtually-concatenated data traffic is routed in a network comprising a plurality of nodes. For a given traffic demand to be routed from a source node to a destination node in the network, an initial candidate path set satisfying a differential delay constraint is determined by arranging a plurality of paths in order of increasing delay and selecting a particular subset of the plurality of paths as the initial candidate set. A determination is then made as to whether the initial candidate path set is able to support a bandwidth requirement of the traffic demand. If the initial candidate path set is able to support the bandwidth requirement of the traffic demand, the initial candidate path set is utilized to route the traffic demand. Otherwise, the process is repeated for one or more additional iterations, with a different candidate path set satisfying the differential delay constraint being selected for a given additional iteration by application of a sliding-window function to the plurality of paths arranged in order of increasing delay, until a different candidate path satisfying the differential delay constraint is determined to support the bandwidth requirement of the traffic demand.

Circuit-switched network architectures, such as those based on synchronous optical network (SONET) or synchronous digital hierarchy (SDH) standards, were originally designed to support voice traffic using dedicated fixed-bandwidth connections. Although such networks are advantageous in that they incorporate substantial reliability and protection mechanisms, their primary disadvantage has been a lack of bandwidth efficiency.
Packet-switched network architectures, which include those based on asynchronous transfer mode (ATM) or Internet protocol (IP) standards, have traditionally been much better able than circuit-switched architectures to handle data traffic. Since data traffic is inherently bursty, it leads to underutilization of the fixed-bandwidth connections of conventional circuit-switched networks. Packet-switched network architectures provide the benefits of statistical multiplexing, which allows for better handling of bursty data traffic.
Recently, virtual concatenation (VC) and link capacity adjustment scheme (LCAS) protocols have been developed which allow more efficient use of the existing fixed-bandwidth connections associated with circuit-switched SONET/SDH network infrastructure. For example, these protocols are utilized in transmission of Ethernet over SONET (EoS) data traffic over metropolitan networks, and in numerous other data transmission applications. The VC and LCAS protocols are described in greater detail in, for example, ITU-T standards documents G.707 and G.7042, respectively, both of which are incorporated by reference herein.
Virtual concatenation generally allows a given source node of a network to form a virtually-concatenated group (VCG) which includes multiple members each associated with a corresponding data stream. The different data streams may then be transmitted over diverse routes through the network from the source node to a given destination node. The destination node recombines the streams to reconstruct the original VCG.
The LCAS protocol enhances the basic virtual concatenation functionality described above by allowing so-called "hitless" addition and deletion of members from a VCG, that is, addition and deletion of members without the introduction of errors into the transmitted data. The LCAS protocol also enables a VCG to operate at a reduced capacity after the failure of routes associated with one or more members, by allowing the temporary removal of members associated with failed routes from the VCG.
The above-cited U.S. patent applications Ser. No. 10/446,220 and Ser. No. 10/745,881 provide additional performance improvements beyond those associated with the conventional VC and LCAS protocols.
When implementing VC or LCAS related techniques, it is often necessary to provide compensation for differential delays of the diverse routes over which the various members of a VCG are transmitted. Unfortunately, providing such a capability in conventional practice typically requires that each network node be configured to include an expensive, high-speed differential delay memory. Since a given destination node may receive different diversely-routed members at different times, the differential delay memory is used to store member data until all members are received and the original data stream can be properly reconstructed.
Additional details regarding conventional aspects of differential delay compensation can be found in, for example, G. Garg et al., "Managing Differential Delay in SONET Architectures," EE Times, January 2002, which is incorporated by reference herein.
The above-cited U.S. patent application Ser. No.10/856,444 provides improved route determination techniques for virtually-concatenated data traffic, which are capable of providing desired levels of differential delay compensation in situations in which differential delay memories are incorporated into only a subset of the network nodes.
In provisioning a set of diverse routes for members of a VCG, it is important to have an accurate estimation of link delays. For example, link delay determination is essential for proper implementation of Quality of Service (QoS) in delay-sensitive applications such as voice transmission. A given provisioned VCG circuit with a non-zero differential delay will require the destination node to hold the faster arriving members in memory until the slower ones arrive. Holding these members consumes differential delay buffer space at the sink node. Since many network nodes have only a small amount of buffer memory, the onus is on the routing algorithm to ensure that the VCG circuit is not set up along routes where members will experience more differential delay than can be accommodated by the corresponding nodes. Accurate and efficient link delay determination can therefore facilitate the provisioning of diverse routes for VCG members.
The above-cited U.S. patent application Ser. No. 10/853,422 provides link delay determination techniques which utilize virtual concatenation to determine link delay. For example, link delay may be determined in a network comprising a plurality of nodes by identifying pairs of nodes associated with a given link, and, for each of the identified pairs, setting up a VCG between the nodes of that pair. The VCGs are then utilized to make delay measurements, and the delay measurements are processed to determine delay of the given link. Such delay measurements can considerably facilitate the operation of routing algorithms in the VCG provisioning context.
Despite the important advances provided by the techniques described in U.S. patent applications Ser. No. 10/853,422 and Ser. No. 10/856,444, a need remains for further improvements, particularly in terms of routing algorithms which can take differential delay constraints into account when determining routes for VCG members.

Differential delay constrained routing for virtually-concatenated data traffic


A master clock reference signal may be provided to selected packet fiber nodes in order to synchronize the local clock reference signals generated at selected devices in a cable network. In this way, selected portions of the cable network may be synchronized to a common timing reference signal. Additionally, synchronized timestamp information may also be provided to selected network devices in order to achieve synchronization of timestamps across a selected portion of the cable network.

The present invention relates to digital computer network technology. More specifically, it relates to a technique for synchronizing network devices in an access data network.
Broadband access technologies such as cable, fiber optic, and wireless have made rapid progress in recent years. Recently there has been a convergence of voice and data networks which is due in part to US deregulation of the telecommunications industry. In order to stay competitive, companies offering broadband access technologies need to support voice, video, and other high-bandwidth applications over their local access networks. For networks that use a shared access medium to communicate between subscribers and the service provider (e.g., cable networks, wireless networks, etc.), providing reliable high-quality voice/video communication over such networks is not an easy task.
One type of broadband access technology relates to cable modem networks. A cable modem network or "cable plant" employs cable modems, which are an improvement of conventional PC data modems and provide high speed connectivity. Cable modems are therefore instrumental in transforming the cable system into a full service provider of video, voice and data telecommunications services.
FIG. 1 shows a block diagram of a conventional two-way hybrid fiber-coaxial (HFC) cable network 100. As shown in FIG. 1, the cable network 100 includes a Head End complex 102 typically configured to service about 40,000 homes. The Head End complex 102 may include a plurality of components and/or systems (not shown) such as, for example, a Head End, a super Head End, a hub, a primary hub, a second hub, etc. Additionally, as shown in FIG. 1, the Head End complex 102 typically includes a Cable Modem Termination System (CMTS). Primary functions of the CMTS include (1) receiving data inputs from external sources 100 and converting the data for transmission over the cable plant; (2) providing appropriate Media Access Control (MAC) level packet headers for data received by the cable system, and (3) modulating and demodulating the data to and from the cable network. Typically, the Head End complex 102 is configured to provide a communication interface between nodes (e.g. cable modems) in the cable network and external networks such as, for example, the Internet. The cable modems typically reside at the subscriber premises 110A–D.
The Head End Complex 102 is typically connected to one or more fiber nodes 106 in the cable network. Each fiber node is, in turn, configured to service one or more subscriber groups 110. Each subscriber group typically comprises about 500 to 2000 households. A primary function of the fiber nodes 106 is to provide an optical-electronic signal interface between the Head End Complex 102 and the plurality of cable modems residing at the plurality of subscriber groups 110.
In order for data to be able to be transmitted effectively over a wide area network such as HFC or other broadband computer networks, a common standard for data transmission is typically adopted by network providers. A commonly used and well known standard for transmission of data or other information over HFC networks is the Data Over Cable System Interface Specification (DOCSIS). The DOCSIS standard has been publicly presented by Cable Television Laboratories, Inc. (Louisville, Colo.), in a document entitled, DOCSIS 1.1 RF Interface Specification (document control number SP-RFIv1.1-I06-001215, Dec. 15, 2000). That document is incorporated herein by reference for all purposes.
Communication between the Head End Complex 102 and fiber node 106a is typically implemented using modulated optical signals which travel over fiber optic cables. More specifically, during the transmission of modulated optical signals, multiple optical frequencies are modulated with data and transmitted over optical fibers such as, for example, optical fiber links 105a and 105b of FIG. 1, which are typically referred to as "RF fibers". As shown in FIG. 1, the modulated optical signals transmitted from the Head End Complex 102 eventually terminate at the fiber node 106a. The fiber nodes maintain the signal modulation while converting from the fiber media to the coax media and back.
Each of the fiber nodes 106 is connected by a coaxial cable 107 to a respective group of cable modems residing at subscriber premises 110A–D. According to the DOCSIS standard, specific frequency ranges are used for transmitting downstream information from the CMTS to the cable modems, and other specific frequency ranges are used for transmitting upstream information from the cable modems to the CMTS.
In order to allow the cable modems to transmit data to the CMTS, the cable modems share one or more upstream channels within that domain. Access to the upstream channel is controlled using a time division multiplexing (TDM) approach. Such an implementation requires that the CMTS and all cable modems sharing an upstream channel within a particular domain have a common concept of time so that when the CMTS tells a particular cable modem to transmit data at time T, the cable modem understands what to do. "Time" in this context may be tracked using a counter, commonly referred to as a timestamp counter, which, according to conventional implementations is a 32-bit counter that increments by one every clock pulse.
Typically, digital data on upstream and downstream channels of the cable network is carried over radio frequency ("RF") carrier signals. Cable modems convert digital data to a modulated RF signal for upstream transmission and convert downstream RF signal to digital form. The conversion is done at a subscriber's facility. At a Cable Modem Termination System ("CMTS"), located at a Head End Complex of the cable network, the conversions are reversed. The CMTS converts downstream digital data to a modulated RF signal, which is carried over the fiber and coaxial lines to the subscriber premises. The cable modem then demodulates the RF signal and feeds the digital data to a computer. On the return path, the digital data is fed to the cable modem (from an associated PC for example), which converts it to a modulated RF signal. Once the CMTS receives the upstream RF signal, it demodulates it and transmits the digital data to an external source.
Typically, the use of RF modulated optical signals in a conventional cable network only allows for very narrow opportunities to transmit IP packets. This is because most of the bandwidth of the RF modulated optical signal is used for DOCSIS related signaling between the Head End Complex 102 and plurality of cable modems. As a result, most conventional cable networks are not equipped to handle increased data flows relating to new and emerging broadband network applications such as video-on-demand, telephony, etc.
Accordingly, there exists a continual need to improve access network configurations in order to accommodate new and emerging network applications and technologies.

Technique for synchronizing network devices in an access data network


A method and apparatus for processing audio for playback to provide a smooth transition between a beginning region of an audio track and an end region of a previous audio track is disclosed. A quantity representative of a chromagram is calculated for each of the audio tracks and the mixing points for the beginning and end regions of each audio track are identified. A quantity representative of a chromagram at the mixing point of the beginning region of the audio track and a quantity representative of a chromagram at the mixing point of the end region of the previous audio track are correlated to determine an order of audio tracks for playback and/or to determine the duration of the mix transition.

As a result of advances in audio compression, availability of broadband Internet access at home and the popularity of electronic music distribution systems, users can now acquire and store ever-increasing number of audio files in their local databases. Moreover, consumer-devices with mass random-access storage and sophisticated rendering capabilities make the whole electronic music database available for instant playback. As opposed to traditional music playback where only a limited number of songs are manually selected, there is a strong need for intelligent playlist generation techniques that utilize the whole database while taking the user's interests into account. Moreover, it is desirable to present these songs in a seamlessly streaming manner with smooth transitions. Automatic audio mixing and playback systems which provide smooth transitions between songs are known and commonly referred to as AutoDJ.
An AutoDJ is a software function in a consumer hardware platform that has "knowledge" of music and can thus choose and mix songs from a given database. AutoDJ is not a tool that is used by human DJs to perform audio mixing, it is rather a replacement for the human DJ and operates with minimal intervention.
An AutoDJ does not provide mere crossfade transitions but is capable of applying different types of transitions depending on the audio content and the user preferences. An AutoDJ can be divided into two parts: (1) generating playlists, sorting songs according to their degree of likeness, i.e., it has some "knowledge of music"; and (2) mixing consecutive songs and playing the mix. Mixing the songs includes the steps of computing the type and size of the transition, determining the exact mixing points and playing the music. Such AutoDJ systems offer complex sound processing functionality to realize various transitions between consecutive tracks (e.g. equalization of tempo and synchronization of beat phase) as well as analysis of consecutive tracks. It determines a transition based on straightforward criteria, then executes the transition.
There are a number of existing products that perform automatic audio mixing, for example Bpm DJ and DJ Mix Pro. Bpm DJ is a closed system where predefined playlists are mixed at live events. The predefined mixes are based on different genres. For examples choice include South Dakota wedding SJ mix, a Sioux Falls, Brookings mix, Chamberlain mix, or Watertown event mix or prom, school dance, party etc. These are all based on a known database and playlists. However, this approach requires a prior knowledge of the songs and will only operate with predefined collection of songs. DJ Mix Pro provides more flexibility in its choice of playlist and performs beat mixing based on the input playlist to a certain extent. However, it lacks the ability to determine important song semantics such as phrase boundaries. Automatically mixing songs to create seamless transitions between two songs is also disclosed in US2003/0183964. A drawback of the known automatic mixing methods is that the created mix transitions are often short or of poor quality.

Method and apparatus for processing audio for playback


An apparatus and process are provided for multi-frequency induction heat treatment of workpieces including gears. High frequency power is applied to an induction coil that surrounds the workpiece so that a high frequency magnetic field couples with the workpiece to inductively heat the workpiece. A C-core inductor is coupled to a coil that has low frequency power applied to it. The workpiece is inserted in a gap in the C-core inductor magnetic circuit so that it experiences low frequency Joule effect heating when the low frequency current is applied to the coil coupled with the C-core inductor. Alternatively the workpiece may be inserted around the C-core inductor when the workpiece has an opening.

A gear, or other workpiece, may be inductively heat treated by passing an ac current through an induction coil. The current creates a magnetic field around the coil that magnetically couples with the gear to induce eddy current in the gear. Induction hardening of gears provides a martensitic layer at the tooth surface of the gear to increase hardness and wear resistance while allowing the remainder of the gear to be unaffected by the process. The increase in hardness also improves contact fatigue strength and other mechanical properties. The geometrical complexity of gears and variation in electromagnetic coupling between the induction coil, and tooth tip and root fillet, results in different induced heat intensities in the tip versus the root of the gear.
Frequency of the current makes a noticeable effect on eddy current flow within the gear and heat distribution. Basically when it is necessary to harden the tooth tips only with a single frequency of current using a single-turn or multi-turn solenoid coil, a relatively high frequency (e.g. 30 kHz to 450 kHz) and high power density are applied. See for example FIG. 1(a). When relatively high frequency current (power) is applied to coil 100, eddy current induced heating in gear 102 follows the contour of the gear as indicated by representative heating profile lines 104. Since the highest concentration of the current density will be in the tip of tooth 106, there will be a power surplus in the tip compared to root 108. Taking also into account that the tip of the tooth has the minimum amount of metal to be heated compared to root 108, the tip will experience the most intensive temperature rise over the entire heating cycle. In addition, from the thermal perspective, the amount of metal beneath the gear root represents a much greater heat sink compared to the tooth tip. Another factor that also complements the more intensive heating of the tooth tip deals with a better electromagnetic coupling due to the electromagnetic proximity effect between the inductor coil and tooth tip in comparison to the root; higher frequency has a tendency to make the proximity effect more pronounced.
When inductively hardening tooth root 108, a relatively low frequency (e.g., 50 Hz to 20 kHz) is preferable. With a low frequency, the eddy current penetration depth is much greater than with high frequency. When heating fine pitch and medium pitch gears it is much easier for low frequency induced current to make a short path and follow the base circle or root line of the gear instead of following the tooth profile. See for example FIG. 1(b) and representative heating profile lines 110. The result is more intensive heating of the root fillet area compared to the tip of the tooth.
Typically, in order to provide a hardness pattern that follows the profile of the gear tooth (from tip to root) preheating of the gear is required. Depending upon the gear geometry, preheating is usually accomplished by using a medium or low frequency (e.g. less than 20 kHz). High frequency (e.g. 30 kHz through 450 kHz) is applied during the final heating stage.
FIG. 2 illustrates one prior art method of inductive heating that utilizes a single coil 114 and two inverters 116a and 116b that are sources of low (or medium) frequency power, at low power density, and high frequency power, at high power density, respectively. The salient steps of the method are: place a gear within coil 114; rotate the gear; apply low frequency current from inverter 116a (by opening contacts 118 and closing contacts 120) to the coil to inductively preheat the gear; disconnect the coil from inverter 116a (by closing contacts 118) and apply high frequency current from inverter 116b (by opening contacts 120) to heat the gear to hardening temperature; remove the high frequency current from the gear; and quench the gear. Major drawbacks of this method is the system's low reliability and high cost. High currents are required for induction heating, and high current electromechanical contacts usually have a short life. Longer lasting electronic switches can be used in lieu of mechanical switches, but this would increase the overall cost of the system.
FIG. 3 illustrates another prior art method of inductive heating that utilizes two coils, namely preheat coil 128a and final heat coil 128b, and two inverters 130a and 130b. Medium frequency power inverter 130a supplies power to the preheat coil at low power density and high frequency power inverter 130b supplies power to the final heat coil at high power density. In this method gear 102 is sequenced by a suitable mechanical transfer system (in direction of arrow shown in FIG. 3) through preheat coil 128a, final heat coil 128b and quench ring 132 to harden gear 102 (shown in preheat coil). A major drawback of this method is that a short time between preheating and final heating (e.g. less than 1 second) may be required. This results in increased equipment cost, since the mechanical transfer system must be of a precision design for fast (fraction of a second) and accurate gear transfer from the preheating position to the final heat position.
In another prior art method simultaneous dual frequency power supply is used for gear hardening, for example, as disclosed in U.S. Pat. No. 2,444,259 (Method of High Frequency Induction Heating). The output of the simultaneous dual frequency power supplies consists of two appreciably different frequencies. One of frequencies provides heating of the root fillet and the other frequency provides heating of the tooth contour. A major drawback of this simultaneous dual frequency heating method is that the shape of the single coil cannot be optimized for both frequencies.
One objective of the present invention is improving the uniformity of induction hardening of gears (in particular, but not limited to, conical gears and pinion gears) and the reduction of gear distortion by using a relatively low frequency C-core type induction heating of the workpiece in combination with a relatively high frequency of induction heating of the workpiece using a separate induction coil.

Multi-frequency heat treatment of a workpiece by induction heating


With a blood measuring apparatus according to the invention, which uses capillary tubes (16, 17), these can be filled with blood from a drop of blood of about 1 microliter. This small amount of blood can be produced by the pricking of a finger. The blood sample can then be placed in an apparatus (1) with equipment for the determination of the blood by transillumination. The tubes (16, 17) are mounted in an independent plate piece (6), and the tubes are secured in V-form so that the inlet ends lie closely up against each other. This provides the possibility of filling two tubes at the same time, and herewith the possibility of simultaneous determination of one's own blood and a comparison with blood in, for example, a prepared tube.

Apparatus of this kind is used particularly by haemophilia patients for measuring the coagulability of the blood, and hereby for the determination of whether there is need for the injection of a factor VIII preparation in order to avoid haemorrhages.
Equipment of this kind is known from EP publication no. 120 715. Here, the capillary element consists of a measuring cell in the form of an elongated channel at the end of a holder. Blood is sucked up into the channel, and the measuring cell can hereafter be inserted into a measuring apparatus with a light source and a photometer. The photometer measures the amount of light which, after the emission, passes the transparent side of the measuring cell, and which after reflection in the blood and the back of the measuring cell again passes through the transparent side.
This measuring cell does not, however, provide an accurate measurement result, the reason being that it is based on reflection. This gives rise to a measurement inaccuracy which is so great that it is unsuitable for the measurement of the coagulability of the blood. Furthermore, it is difficult to produce such a measuring cell, the reason being that the capillary element is built up of at least two parts which must be assembled for the formation of an element.
From the Swedish publication no. 404 260, an apparatus is known which can measure with greater accuracy, since this uses a beam of light and light detecting elements which are placed at an angle in relation to the light's direction of incidence in the sample.
However, this apparatus demands a precisely balanced positioning of these measuring means in relation to the blood sample, and in practice this means that the blood must be kept in a vessel-like container during the measurement. Since at a minimum there must be sufficient blood to cover the light detectors, a considerable amount of blood is required. This is a serious drawback for the user, the reason being that such a large amount of blood in practice can be obtained only with the help of a suction pump and hypodermic. Therefore, this apparatus is not suitable for so-called home use, where the user himself must be able to remove the blood sample necessary for a measurement.

Apparatus for determination of the coagulation time of a blood sample


A semiconductor device comprises a semiconductor substrate having first and second active regions of first conductivity type, first and second insulated electrodes crossing the first and second active regions, respectively, a third insulated electrode formed on the second insulated electrode, source/drain regions formed on both sides of the first electrode, pseudo source/drain regions formed on both sides of the second electrode, first and second power source lines formed above the second active region through an interlevel insulating layer, a first interconnection connecting the third electrode and the pseudo source/drain regions to the first power source line, and a second interconnection connecting the second electrode to the second power source line, wherein the first active region constitutes a MOS transistor and the second active region constitutes a bypass capacitor and induces an inversion layer of the second conductivity type under the second electrode structure when the power source lines are activated.

A) Field of the Invention
The present invention relates to a semiconductor integrated circuit (IC) device to be used with a portable equipment and the like, and more particularly to a semiconductor device aiming at suppressing a power source voltage fluctuation and unnecessary radiation.
B) Description of the Related Art
As shown in FIG. 4A, when a semiconductor integrated circuit (IC) package 110 is mounted on a printed circuit board 120 or the like and used with other circuits, a bypass capacitor 103 of about 1 μF is externally connected between a lead 101 for a package power source voltage and a ground plane 102 of the printed circuit board to suppress a fluctuation of the voltage to be supplied to IC. In the IC package 110, a power source voltage pad 107 on a silicon chip 130 is connected by a bonding wire to the package power source voltage lead 101. An internal circuit of IC is connected to the bypass capacitor 103 via the pad 107, bonding wire 105 and lead 101.
The bypass capacitor externally connected to IC and a noise cancelling circuit for signal lines can suppress to some degree a power source voltage fluctuation outside IC and noises on signal lines. However, it is difficult to perfectly prevent a power source voltage fluctuation inside IC and malfunctions and noises of the IC internal circuits by the external electrostatic discharge etc. In the following, a mechanism of a power source voltage fluctuation inside IC will be considered.
As shown in FIG. 4B, when a change ΔI in a current I occurs, a potential (power source voltage) of power source lines VDD and VSS having a wiring resistance R changes by ΔV=ΔI*R, where the current I flows when a signal rises or falls and a total capacitance C is charged or discharged. The capacitance C includes a wiring capacitance, a transistor gate capacitance and a transistor junction capacitance. This change in the power source potential becomes power source noises and has the influence upon a frequency band several hundred to several thousand times the frequency of a clock signal (internal circuit operation frequency).
As shown in FIG. 4C, the bypass capacitor 103 is connected to IC via the lead 101 and bonding wire 105. The lead 101 and bonding wire 105 have an equivalent inductance component L and reactance component RC. In the high frequency band, the inductance component L is dominant resulting in a high impedance. The bypass capacitor 103 externally connected to IC and the inside of IC are separated by the inductance L in the high frequency band. Power source noises generated by the operation of internal circuits of IC are hard to be sufficiently absorbed by the bypass capacitor. Power source noises generated inside IC leak to the external from signal input/output pads so that IC becomes a high frequency noise source.
Power source noises generated inside IC influence the operation of functional blocks constituting IC and each functional block operates erroneously in some cases. In an IC having both analog and digital circuits among other IC's, power source noises generated by a switching operation of digital circuits influence the operation of analog circuits. This inevitably leads to the deteriorated IC characteristics. It is desired to suppress a fluctuation of a power source voltage inside IC.
Japanese Patent Laid-open Publication No. SHO-60-161655 has proposed that a power source line in IC is used as one electrode and a substrate area along this power source line is used as the other electrode to form a capacitor between the positive and negative power source lines, this capacitor constituting a portion of a bypass capacitor. According to this proposed device, the bypass capacitor can be formed directly between the power source lines inside IC so that a power source voltage fluctuation can be suppressed a little. Capacitance capable of being built in IC by this method has a limit of probably about several hundred pF. Since the total capacitance inside IC (all gate capacitances, all junction capacitances and all wiring capacitances) is several thousand to several ten thousand pF, it is difficult to sufficiently absorb power source noises.
Japanese Patent Laid-open Publication No. HEI-2-202051, Japanese Patent Laid-open Publication No. HEI-10-326868 and Japanese Patent Laid-open Publication No. HEI-10-150148 describe also techniques of forming a capacitance for suppressing a power source fluctuation inside IC. The techniques described in these documents are also hard to form a sufficient capacitance inside IC.

Semiconductor device with bypass capacitor


A communication controller performs route control in a communication system comprising a specific network, a first network configured to accommodate a specific device connected to the specific network, a second network provided between the specific network and the first network, and a filter configured to restrict communication according to a predetermined condition. The communication controller device includes: a route-setting device which controls the path such that a first path of the branched path is set as a path leading to a predetermined address space including an address of the specific device via the filter, and a second path of the branched path is set as a path leading to the first network in which the predetermined address space is excluded from an address space of the first network.

In communication systems connected to public networks such as the Internet, communication functions deteriorate due to concentration of aggressive communication in some cases. On the other hand, a technique of reducing deterioration of a communication function due to concentration of aggressive communication is known (refer to Patent Document 1).
Patent Document 1 discloses carrying out countermeasures of reducing the influence of a distributed denial-of-service (DDoS) attack in one Internet service provider (ISP) in the case of communication of a multi-home user network with a plurality of ISPs.

Communication path control method, communication path control device, and communication path control program that divide a path leading to a network that accommodates a specific device into a path that passes through a filter device and a path that does not pass through a filter device


A sensor element of thin film components and fiber glass, and a support structure of fiber glass; when sensor elements are attached to the support structure, a sensor system for magnetoencephalographic measurements is formed. A substrate containing a planar signal coil and a SQUID is attached on a circuit board of fiber glass using a spring cut on the edge of a body plate. On the sensor element, is a small but mechanically stable connector or several such connectors (5); when the sensor element is plugged in receptacles (6) on the support structure (7), the element settles in a well defined orientation. Support structure (7) is made of a fiber glass shell following the shape of the bottom (10) dewar vessel, adapted to the shape of the head. The receptacles (6) are attached to the glass fiber shell by springs (9) made of thin fiber glass plate such that an array covering the whole skull as evenly as possible is formed when the sensor elements are plugged to the receptacles. The spring is cut to enable rotation only around an arbitrary axis in the plane of the spring and a translation only in a direction perpendicular to the plane of the spring. When this support structure is inserted in the dewar, individual sensor elements lean against the dewar bottom (10) by aid of three feet (11), pressed by springs (9), settling perpendicularly to the normal of the dewar bottom passing through the center of the sensor element.

1. Field of the Invention
This invention relates to a compact magnetometer element comprised of fiber glass and superconducting thin-film components on silicon, and a support structure used for integration of the individual magnetometer elements into a detector array applicable to magnetoencephalographic (MEG) recordings of human brain activity. Such devices are used for recording the weak, space and time dependent magnetic fields arising from neural activity. In medical research and diagnostics these methods are gaining more and more attention. Especially, the study of the brain function and malfunction in man can be done noninvasively with this method, i.e. without touching the subject or exposing him to electromagnetic radiation or radioactive tracers. The essential advantage of the MEG method as compared to the widely used electroencephalographic (EEG) method, i.e. measurement of the electric potential on the scalp, is due to the fact that the nonuniform conductivity of the human tissue distorts the magnetic signals of neural origin much less than the associated electric potential distributions on the scalp. Consequently, by the MEG method it is possible to locate the source currents associated with the brain activities with a spatial and temporal resolution of a few millimeters and milliseconds. The method has been described in more detail for example in CRC Critical Reviews in Biomedical Engineering, vol. 14 (1986), number 2, pp. 93-126.
Practical MEG devices must be able to detect magnetic signals corresponding to flux densities of the order of 100 fT or below. In addition, the field must be measured simultaneously at several, up to hundred, different locations around the skull. The only technical device possessing a sensitivity sufficient for the measurement of these signals is the so called Superconducting Quantum Interference Device (SQUID) magnetometer. A modern SQUID with the associated signal coils is fabricated on a polished silicon substrate by using thin film technique widely used in the fabrication of integrated circuits (see for example Superconducting Quantum Interference Devices and their Applications, eds H. D. Hahlbohm and H. Lubbig, Walter de Gruyter, Berlin 1985, pp. 729-759). The principle and function of a SQUID magnetometer has been described in detail for example in Journal of Low Temperature Physics, vol. 76 (1989), number 56, pp. 287-386. These devices work only in a very low ambient temperature. Typically, the device is immersed in liquid helium contained in a vacuum insulated dewar vessel. The working temperature of the SQUID is then 4.2 degrees Kelvin.
The present invention is directed to a SQUID magnetometer element having a novel type of mechanical construction, and a support structure to be used in a helium dewar for integration of the individual magnetometer elements into an array that covers the entire cranium of a human subject. Such MEG devices, collecting practically all the information available through the method, have not been constructed so far. A magnetometer insert on which the individual magnetometer elements and their support structure described here can be mounted is described in a copending patent application "A multichannel device for measurement of weak spatially and temporally varying magnetic fields" by Ahonen, Knuutila, Simola, and Vilkman, Ser. No. 07/807,149, filed Dec. 13, 1991 now, U.S. Pat. No. 5,243,281, issued Sep. 7, 1993.
2. Description of the Related Art
In constructing the magnetometer element one must be able to join together the substrate of the thin film SQUID, a piece of thin silicon wafer about one inch in diameter, and a base element made of insulating material and containing the electrical contacts and the structures needed for mechanical mounting of the magnetometer element on the support structure. The joint between the silicon and the base element must sustain the repeated thermal cycling between room temperature and the liquid helium temperature during the testing and maintenance of the magnetometer. Because of the relatively low thermal expansion of silicon such a joint made by gluing is not reliable. It is also impossible to mount commercially available connectors directly and reliably on silicon.
The signal coil on the magnetometer element must be located as close to the bottom of the helium dewar as possible and the element itself must be flat. The first requirement arises from the need to minimize the distance between the detector coil and the source for the magnetic field located in the brain outside the dewar. This is necessary because the amplitude of the measured signal is inversely proportional to the third power of the distance from the source. The latter requirement is explained by the need to minimize the diameter of the neck through which the magnetometer array is introduced into the dewar. This minimizes the boil off rate of liquid helium which is an essential problem in the construction of dewars for MEG magnetometers. To cover the whole skull one must place magnetometer channels on opposite sides of the skull. The minimum inner diameter of the dewar neck is therefore approximately 25 centimeters added with the heights of the two magnetometer elements on opposite sides of the head. In the prior art devices the height of the magnetometer elements along with the structures needed for their mounting has been several centimeters. The boil off rate in dewars with such wide necks is dominated by the conduction of heat along the neck, and reducing the diameter of the required neck , i.e. The height of the magnetometer elements, is therefore crucial.
Other ways to avoid a large neck would be 1) to construct the dewar in such a way that the magnetometer insert is not introduced into the dewar through the neck, but it is rather built in the dewar permanently when fabricating the dewar (EP 200 958), or 2) to construct the vacuum of the dewar so that it can be opened (see for example Advances in Biomagnetism, eds S. J. Williamson, M. Hoke, G. Stroink and M. Kotani, Plenum, New York 1989, pp. 677-679). The first alternative makes the service of the detector coils difficult or even impossible. The SQUIDs at least need maintenance, and should therefore be mounted on an insert that can be taken out from the dewar. In this case one would have to use, between the SQUIDs and the detector coils, superconducting multicontact connectors which are not reliable enough. The second alternative, a dewar having a narrow neck for transfer siphon only but provided with a large cold vacuum seal, is potentially dangerous. These dewars are used in small, relatively closed magnetically shielded rooms in the presence of possibly disabled neurological patients. This implies that breaking of the vacuum seal might lead to severe consequences. Therefore, the MEG dewars must be manufactured by using conventional, reliable techniques.
The central goal in both scientific and clinical use of MEG devices is to locate the cortical source currents responsible for the measured neuromagnetic field as accurately as possible. This goal can be achieved only if 1) the field is measured over the entire cortex and if 2) the geometry of the measuring device and its location with respect to the brain is known accurately. To cover the appropriate parts of the skull one needs a support structure for the magnetometer array which is roughly hemispherical in shape. The diameter of the hemisphere should be about 25 cm and the accuracy of its overall geometry better than a millimeter which roughly corresponds to the relevant accuracy in locating neurological current sources. Especially, one must know the size, shape, and location of the magnetometer array when it is at liquid helium temperature in the dewar.

Compact magnetometer probe and an array of them covering the whole human skull for measurement of magnetic fields arising from the activity of the brain


A high frequency antenna module having a substrate, a feeding electrode and two dielectric chip antennas being mounted on said substrate. Each of the two dielectric chip antennas having a base end connected to the feeding electrode and a floating end as an open end. A distance between said open ends of the two dielectric chip antennas is shorter than a distance between said base ends of the two dielectric chip antennas.

1. Field of the Invention
The present invention relates to a high frequency antenna module having two sets of internal antennas corresponding to the same frequency, which is used in a portable telephone or a wireless LAN. Hereinafter, "High frequency" is in a range from 100 MHz to 20 GHz.
2. Description of the Related Art
Some portable wireless communications apparatus for wireless LAN employ a plurality of antennas in a so-called diversity system. Space diversity, pattern diversity, polarization diversity, frequency diversity, and time diversity are examples of the diversity system.
Among others, the space diversity system uses two or more antennas for reception, which are physically separated from each other. Though there is no need for the plurality of antennas, if one antenna is able to transmit and receive electromagnetic wave in all directions, the plurality of antennas are practically mounted. As the antenna in the diversity system of this type, a chip antenna having the radiation electrodes formed on the surface or inside of a base substance is typically employed (refer to patent documents 1, 2 and 3). As the scheme for the dielectric chip antenna, a monopole, an inverted F, and a patch are known. Since the high frequency module built in the portable unit for wireless LAN is strongly required to be smaller, the antenna is also required to be miniaturized. Consequently, the dielectric chip antenna is mounted on a printed board. An antenna module in which a plurality of chip antennas is arranged on the mounting substrate has been known (refer to patent document 4).                [Patent document 1] JP-A-2000-13126        [Patent document 2] JP-A-9-55618        [Patent document 3] JP-A-10-98322        [Patent document 4] JP-A-9-199939
The antenna modules using such chip antenna is satisfactory from a viewpoint of miniaturization for the portable or wireless uses, but does not necessarily meet the antenna characteristics such as the reflection coefficient and the radiation gain. The present inventors have made elaborate researches on the antenna characteristics, which greatly depend on the arrangement and positional relation of two antennas, when two antennas are mounted on one end face of the mounting substrate. Consequently the present inventors have found the optimal arrangement and positional relation of antennas to attain the excellent antenna characteristics.


A method writes data in a resistive memory device in which paths for performing write operations to record first-state data and second-state data are controlled to cause current to flow in opposing directions in a resistive memory cell whose switching type has been determined. The method includes performing a write operation in a predetermined direction when writing the first-state data and second-state data, making a determination with respect to success in target data through verification, and attempting an additional write operation through a path reversed from a write path of corresponding data according to a result of the determination.

1. Technical Field
The present invention relates to a resistive memory device and a write method thereof.
2. Related Art
Recently, studies have been conducted on next-generation memory devices that can serve as substitutes for existing memory devices such as dynamic random access memory (DRAM) devices and flash memory devices. One next-generation memory device is a resistive random access memory (ReRAM) device that uses a resistive material capable of switching between two or more different resistance states by a sharp variance of resistances in response to an applied bias voltage.
The resistance of a variable resistance material layer of a ReRAM device reversibly changes according to the polarity or amplitude of a pulse applied thereto.
In addition, the ReRAM device may operate in a unipolar switching manner or a bipolar switching manner according to polarities of voltages applied in a set operation and a reset operation.
FIG. 1a and FIG. 1b are hysteresis curves showing a bipolar switching operation of a typical resistive memory device.
FIG. 1a and FIG. 1b show a positive switching manner and a negative switching manner, respectively, in a bipolar switching operation of a resistive memory device. In FIG. 1a and FIG. 1b, an X axis represents voltage, and a Y axis represents current.
In the hysteresis curve of FIG. 1a, while increasing a positive voltage, cell data is defined as reset data if it is sensed that the cell has a high resistance state and defined as set data if it is sensed that the cell has a low resistance state, with respect to a predetermined voltage. The directions of the arrows show that there are two paths for data writing.
In the hysteresis curve of FIG. 1b, while increasing a negative voltage, cell data is defined as set data if it is sensed that the cell has a high resistance state and defined as set data if it is sensed that the cell has is a low resistance state, with respect to a predetermined voltage. Similar to FIG. 1a, in FIG. 1b paths for data writing appear to have two directions.
FIG. 1a and FIG. 1b illustrate the bipolar manner in which a bidirectionally reversible reaction is possible as described above. As shown in FIGS. 1a and 1b, an operation can be performed between a set state and a reset state at a predetermined threshold voltage.
Therefore, when designing a cell structure, it is first determined whether the resistance reference of the cell is defined in a positive-reset and negative-set manner or in a negative-reset and positive-set manner. Then a type of write driver is selected according to the result of the determination.
However, characteristics of a cell may vary depending on process, voltage, and temperature (PVT) conditions of a cell manufacturing process, cell operation conditions, or ambient environments. As a result, even if all circuit conditions and schemes are designed in a positive switching manner, a specific cell may still exhibit negative switching characteristics as its threshold voltage deviates from a predetermined threshold voltage, which may cause errors in a data writing operation.

Resistive memory device and write method thereof


A pinch clamp to restrict flow in a flexible tube or hose is provided. The pinch clamp includes two elongated pinching members that are pivotally connected at one end with a threaded tightening member at the other end for selectively securing the pinching members in a closed position when the pinching members are pivoted toward each other. The inner cooperating faces of elongated pinching members have flat cooperating surfaces for engaging the flexible tube or hose.

The invention relates generally to clamps for pinching flexible tubing, and more particularly to a locking clamp suitable for pinching tubing and hoses used in the pharmaceutical and related industries.
A wide variety of clamps are available in the art. Many are used to connect flanged tubes. For example, U.S. Pat. No. 6,708,377 to Maunder discloses a tube clamp for sealing coupling two flanged tubes together. The clamp has two semi-circular coupling members with an inwardly facing tapered groove for drawing the two flanges into a sealing engagement. Similarly, U.S. Pat. No. 3,544,138 to Von Eiff discloses a coupling assembly for conduits. The coupling assembly has two annular members having a flat end face with grooves where a resilient gasket can be received to provide an effective seal to conduits when the annular members are clamped together. U.S. Pat. No. 2,212,571 to Martin discloses a union for connecting sections of pipe to form a fluid tight joint. The union has two adjacent tubular coupling members and a surrounding clamp ring to draw the coupling members together to form a fluid tight joint.
There is also a number of design patents related to clamps in the art used as bag clips. For example, U.S. Design Pat. No. D 350,696, No. D 431,004 and No. D 437,783 each disclose an ornamental design for a bag clip.
While these patents disclose a variety of clamps used to pinch hose, connect flanged tubes and ornamental designs for bag clips, there remains a need for a pinch clamp suitable for restricting fluid flow in a flexible tubing or hose for use in the pharmaceutical and food industries.


A process and apparatus for combustion of a solid carbonaceous material, for example coal, in which a mixture of the solid carbonaceous material and combustion air is injected into a combustion chamber and ignited, thereby forming a fuel-lean primary combustion zone. A gaseous fuel is injected into the combustion chamber in a region downstream of the primary combustion zone, thereby forming a fuel-lean secondary combustion zone. Temperature in the secondary combustion zone is in the range of about 1800.degree. F. to 2400.degree. F.

1. Field of the Invention
This invention relates to a fuel reburn process and apparatus for reduction of NO.sub.x emissions resulting from the combustion of solid carbonaceous materials, such as coal, in boilers, fluidized bed combustors, and similar combustion devices. In addition to reducing NO.sub.x emissions from boilers and similar devices, the fuel reburn process and apparatus of this invention also maintain CO emissions at environmentally acceptable levels without the addition of air or oxygen downstream of the fuel reburn zone.
2. Description of Prior Art
The utilization of coal for power generation results in emission of nitric oxides (NO.sub.x) which are formed primarily as a result of oxidation of the nitrogen inherent in the coal and oxidation of molecular nitrogen present in the combustion air. Nitric oxides released in the atmosphere contribute to acid rain, accelerate the photochemical reactions responsible for smog, and result in increased ground level ozone concentrations. The emission of nitric oxides from existing coal burning power plants is governed by Title I and Title IV of the Clean Air Act Amendments of 1990. Title IV limits the allowable NO.sub.x emissions to 0.45 pounds per MBtu for tangential fired boilers and 0.50 pounds per MBtu (approximately 375 ppm) for wall fired boilers. NO.sub.x emission limits at 0.20 pounds per MBtu have been proposed in the ozone non-attainment areas under Title I, and have been targeted for decade end implementation under the Ozone Transport Region Memorandum of Understanding.
One technique for reducing the amount of NO.sub.x produced in a combustion process and, thus, emitted by said combustion process, is the use of fuel-rich reburn. Such a reburn process is taught, for example, by U.S. Pat. No. 5,020,456; U.S. Pat. No. 5,105,747; U.S. Pat. No. 5,307,746; and U.S. Pat. No. 5,205,227. Each of these U.S. patents teaches a process and apparatus for emissions reduction from waste incineration in which a combustible material is burned in a primary combustion zone in the lower region of a combustion chamber, and an oxygen deficient secondary combustion zone for mixing with the combustion products from the primary combustion zone is formed by the injection of fuel, a calcined sorbent, recirculated flue gases, and, in some instances, a carrier fluid injected into the combustion chamber above the primary combustion zone. In each case, however, overfire air is injected into the combustion chamber above the oxygen deficient secondary combustion zone to ensure complete combustion of any remaining combustible materials in the combustion products from the oxygen deficient secondary combustion zone. The use of overfire air is necessary to ensure that no unburned hydrocarbons are exhausted by the combustion process. The requirement for overfire air adds significant capital and operating costs.

Nitrogen oxide reduction by gaseous fuel injection in low temperature, overall fuel-lean flue gas


A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from the center, in the width direction, of the substrate.

1. Field of the Invention
The present invention relates to a semiconductor laser apparatus, and more specifically to a semiconductor laser apparatus having a plurality of light emitting points.
2. Background Art
Presently, as an optical recording medium, a compact disk (CD), a mini disk (MD), a digital versatile disk (DVD) or the like have been known. In the pickups of these recording media, for example, for replaying a DVD and a CD, laser of an oscillating wavelength of 650 nm for the DVD and laser of a oscillating wavelength of 780 nm for the CD are required for a light source. Furthermore, in order to realize the simplification or miniaturization of an optical pickup, a monolithic laser apparatus that can output both wavelengths of 650 nm and 780 nm from a chip is effective.
In the case of laser having a plurality of light emitting points, a structure wherein a plurality of light emitting points are disposed at even intervals or in left-right symmetry to the center of the chip is generally used. For example, in the case of a semiconductor laser having two light emitting points for CD/DVD and a chip width of 300 μm, in general, the two light emitting points are disposed in left-right symmetry, and the light emitting point of 650 nm—LD is generally controlled so as to locate at 55 μm from the center (18.3%). When the chip width is changed to 250 μm and 200 μm, the light emitting point of 650 nm—LD is also generally controlled so as to locate at 55 μm from the center (22% and 27.5%).
In a laser having the locations of light emitting points of such percentages to the width of the chip, since stress to light emitting points is different depending on left and right of each light emitting point, the elements fabricated from the same material using the same procedures have different characteristics depending on the locations of the light emitting points. When the locations of two light emitting points are asymmetry to the center of a chip, stress to the light emitting points differs depending on the distance from the center of the light emitting points to the width of the entire chip, and affects the light emitting characteristics.
Stress applied to a light emitting point becomes larger as the light emitting point departs from the center of a chip. Therefore, at the light emitting point apart from the center of a chip, the asymmetry of stress applied to the left and the right of the light emitting point cannot be negligible. For example, at the light emitting point greatly apart from the center of a chip to the right, strong stress is applied to the right of the light emitting point, and at the light emitting point greatly apart from the center of a chip to the left, strong stress is applied to the left of the light emitting point; therefore, the characteristics of the left light emitting point becomes different from those of the right light emitting point. In particular, when an off substrate (tilted substrate) is used, or when a plane close to a light emitting point is used as a die-bonding plane, since a solder material is used to bond the chip to a mounting point, such as a stem, the applied stress becomes larger, and asymmetry of the stress applied to the light emitting point becomes significant.
Particularly in the case of a simple ridge stripe structure wherein the both ends of the ridge stripe structure are not buried with a semiconductor material, since such stress is strong, the effect of the asymmetry is great.
As described above, stress applied to a light emitting point changes depending on the distance from the center of the chip to the light emitting point. For example, it has been clarified from experimental facts that when the surface close to the light emitting point of a double wavelength laser having a chip width of 200 μm, and a light emitting point of 650 nm—LD at the location of 55 μM from the center of the chip is die-bonded on the die bonding plane using a solder or the like, in optical properties, the polarization angle is less than −10°, and the polarization ratio decreases to about 60.
There is limitation in the distance between two light emitting points depending on the wavelength band to be used. For example, in a generally used 780 nm/650 nm double wavelength semiconductor laser apparatus for CD/DVD, a distance of about 110±10 μm is required between the two light emitting points. Therefore, all the light emitting points cannot be disposed in the vicinity of the center of the chip to minimize the effect of stress applied to the light emitting points.


A new Salvia plant named ‘Mes Pur,’ particularly distinguished by purple-violet flower color, upright, well branched, dense and bushy habit, medium green foliage and large sized flowers that are early flowering.

The present invention comprises a new Salvia, botanically known as Salvia×hybrid, and hereinafter referred to by the variety name 'Mes Pur'.
'Mes Pur' is a product of a planned breeding program. The new cultivar 'Mes Pur' has purple-violet flower color, upright, well branched, dense and bushy habit, medium green foliage and large sized flowers that are early flowering.
'Mes Pur' originated from an open pollination cross in a controlled breeding program in Gilroy, Calif. USA. The female parent was an unpatented, proprietary hybrid seedling Salvia greggii×(S. microphylla×S. coaheuilensis) identified as '82-3' with light purple color. '82-3' has fewer flowers, a taller and more open plant habit and darker foliage than 'Mes Pur.' The male parent of 'Mes Pur' was unknown.
'Mes Pur' was selected as one flowering plant within the progeny of the stated cross in September 2005 in a controlled environment in Gilroy, Calif. USA. The pollination took place in July 2004 and the seed sowing in May 2005.
The first act of asexual reproduction of 'Mes Pur' was accomplished when vegetative cuttings were taken from the initial selection in the September 2005 in a controlled environment in Gilroy, Calif. USA.
Horticultural examination of plants grown from cuttings of the plant initiated in September 2005 in Gilroy, Calif. USA, and continuing thereafter, has demonstrated that the combination of characteristics as herein disclosed for 'Mes Pur' are firmly fixed and are retained through successive generations of asexual reproduction.
'Mes Pur' has not been observed under all possible environmental conditions. The phenotype may vary significantly with variations in environment such as temperature, light intensity and day length.
A Plant Breeder's Right for this cultivar was applied for in Canada on Dec. 24, 2007. 'Mes Pur' has not been made publicly available more than one year prior to the filing of this application.


An optical pickup includes a light source configured to emit light, a beam splitter configured to transmit or reflect light, an object lens configured to condense the light transmitted by the beam splitter onto an optical storage, and a diffraction grating having a first grating pattern and a second grating pattern. The first grating pattern is configured to diffract and divide the light reflected by the optical storage into a main beam and two sub beams. The second grating pattern is configured to diffract the light along a different diffracting direction than the first grating pattern. A condensing lens is configured to generate astigmatism to the light diffracted by the first grating pattern, and a light sensor is configured to receive the light via the condensing lens and detect a tracking error signal.

1. Field of the Invention
The present invention relates to an apparatus for optical pickup and more particularly, to an apparatus for optical pickup which minimizes offset element occurring between the recorded and non-recorded pattern when object lenses are configured off-axis along the tracks on the optical storage medium is disclosed.
2. Description of the Related Art
Optical storage media such as optical disks optically record data and are in shape of palm-size disk. Those media are loaded on a driver for data to be recorded thereto or to be read therefrom by optical apparatus inside the driver.
There exist various optical storage media, for example, CD (Compact disc), DVD (Digital Versatile Disc), BD (Blu-ray Disc). Also, there are sub groups of DVD, such as DVD-RW, DVD+RW, DVD-RW. The kinds of those media are increasingly diversifying.
In prior arts, various technologies have been developed to trace the track and groove on the optical storage media. Among those technologies, one uses three beams to trace the track and groove. In this case, especially when the three branched-off beams are located off-axis along the tracking direction, there is a problem that offset elements will occur over large areas near the boundary of recording and non-recording pattern of the optical storage media.
In making such various image sensors, efforts are being made to improve these image sensors.


Provided are techniques for computing a task result. A processing data set of records is created, wherein each of the records contains data specific to a sub-task from a set of actual sub-tasks and contains a reference to data shared by the set of actual sub-tasks, and wherein a number of the records is equivalent to a number of the actual sub-tasks in the set of actual sub-tasks. With each mapper in a set of mappers, one of the records of the processing data set is received and an assigned sub-task is executed using the received one of the records to generate output. With a single reducer, the output from each mapper in the set of mappers is reduced to determine a task result.

Multiple linear regression models are usually used to analyze the relationship between one target variable (Y) and a list of predictor variables (X). Numerous techniques, such as forward selection, backward elimination, forward stepwise, etc., have been proposed to select some predictors, which influence the target more than other predictors, out of a large set of k predictors.
A predictor may be described as a field that predicts or influences a target in a predictive regression model. A target may be described as a field that is predicted or influenced by one or more predictors in a regression model.
One way of finding the best regression is to carry out all 2k regression models based on a selected criterion, such as adjusted R square, etc. This technique is also called "exhaustive search". When k is large, it might not be practical to carry out all possible regressions as the computing time grows exponentially with k. There have been efforts to improve performance and they are roughly along two paths: (1) utilizing sequential strategies for moving from one regression model to another regression model; and (2) utilizing parallel computing strategies to distribute the intensive computation.
The map-reduce framework has become a popular paradigm because it can handle petabytes of data in distributed data sources which are increasingly common in the internet era. The map-reduce framework enables applications to work with thousands of nodes in the distributed clusters. A typical map-reduce job usually uses multiple mappers to do computation on different data splits/blocks and one or more reducers to merge the mapper results together such that the final results/statistics are based on the whole data.

International Business Machines Corporation


An embodiment of the present invention provides a system for removing foreign objects from the airstream entering an inlet system of a turbomachine. The system may include an electrostatic system that may be configured to charge conductive, or partially conductive foreign objects that are in the airstream flowing through the system. This system may create an electric field to draw the charged foreign objects, allowing for a collecting section to remove the charged foreign objects from the airstream. An embodiment of the present invention may provide an automatic accumulation system for collecting the foreign objects removed from the airstream. An embodiment of the present invention may provide an automatic cleaning system for cleaning components of the collecting system.

The present invention relates generally to the inlet system of a turbomachine; and more particularly to a system and method of removing foreign objects from the airstream entering the inlet system.
Some turbomachines, such as, but not limiting of, gas turbines, and aero-derivatives, have an air inlet system that channels the incoming airstream towards a compressor. The inlet system usually has a filter section, which screens the airstream of foreign objects and other undesired materials. Typically, the filter section comprises a plurality of static filters made of a reinforced paper media. Foreign objects within the airstream, such as, but not limiting of, dirt, debris, and other unwanted items, tend to accumulate on these filters.
There are a few concerns with the described method of removing foreign objects from the airstream. The accumulation of foreign objects on the filters increases the pressure drop across the inlet system, leading to a decrease in the efficiency of the compressor of the turbomachine. Furthermore, the filters eventually need to be replaced, which can not occur while the turbomachine is operating.
For the foregoing reasons, there is a need for a system and method of removing the foreign objects within the airstream entering the inlet system of the turbomachine. The system and method should provide a filter system that may be cleaned while the turbomachine operates. The system and method should reduce the pressure drop associated with a filter that becomes dirty or clogged with foreign objects.

System and method for removing a foreign object from an airstream entering a turbomachine


A structure for growing plants comprising a main support, vertical supports along the perimeter of the foundation, a perimeter frame connected to the vertical supports, cables connected to the main support, vertical supports and perimeter frame, and an inner and outer shell formed from transmissive panels supported by the cables.

Existing greenhouses can be useful for growing plants, but can also have various drawbacks. Greenhouses lack insulation, which makes them extremely expensive to heat in cold conditions.
For example, greenhouses use vertical posts and trusses to support the roof system. This can be problematic in that growing operations must be designed around the vertical posts, and the trusses and posts cause shade, which reduces the amount of natural sunlight.
For example, greenhouses use either polyethylene or glass, which do not allow the full light spectrum of natural sunlight to penetrate the greenhouse. As a result, structures that use polyethylene or glass do not allow ultraviolet (UV) light to enhance plant growth.


A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

Sputtering, alternatively called physical vapor deposition (PVD), is the most prevalent method of depositing layers of metals and related materials in the fabrication of integrated circuits. The more conventional type of sputtering, as originally applied to integrated circuits as well as to other applications, deposits upon a workpiece a planar layer of the material of the target. However, the emphasis has recently changed in the use of sputtering for the fabrication of integrated circuits because vertical interconnects through inter-level dielectrics having the high aspect ratios now being used present a much greater challenge than the horizontal interconnects. Furthermore, the horizontal interconnects are being increasingly implemented by electrochemically plating copper into horizontally extending trenches while sputtering is being reserved for liner layers deposited onto the sidewalls in the holes in which the vertical interconnects are formed or also deposited onto the walls of the horizontal trenches.
It has long been known that sputtering rates can be increased by the use of a magnetron 10, illustrated in the schematic cross-sectional view of FIG. 1, positioned in back of a sputtering target 12. The magnetron projects a magnetic field 14 across the face of the target 12 to trap electrons and hence increase the plasma density. The magnetron 10 typically includes at least two magnets 16, 18 of anti-parallel magnetic polarities perpendicular to the face of the target 12. A magnetic yoke 20 supports and magnetically couples the two magnets 16, 18. The resultant increased plasma density is very effective at increasing the sputtering rate adjacent the parallel components of the magnetic field 14. However, as illustrated in the cross-sectional view of FIG. 2, an erosion region 22 develops adjacent the magnetic field, which brings a front surface 24 of the target 12 closer to the magnetron 10, which front surface 24 is the surface being currently sputtered. The erosion illustrated in FIG. 2 emphasizes an erosion pit adjacent the magnetron 10. In typical operation, the magnetron 10 is scanned over the back of the target 12 to produce a more uniform erosion pattern. Nonetheless, even if a target eroded to a planar surface, the fact remains that after erosion the surface of the target being sputtered is closer to the magnetron 10 than before erosion.
The target erosion presents several problems if the lifetime of the target 12 is to be maximized. First, the erosion pattern should be made as uniform as possible. In conventional planar sputtering, uniformity is improved by forming the magnets 16, 18 in a balanced, relatively large closed kidney-shaped ring and rotating the magnetron about the central axis of the target. Secondly, the erosion depth can be compensated by adjusting the spacing between the target and the wafer being sputter deposited, as disclosed by Tepman in U.S. Pat. No. 5,540,821. Futagawa et al. disclose a variant in U.S. Pat. No. 6,309,525. These schemes have primarily addressed the dependence of deposition rate on the separation between the wafer and the effective front face of the target 12. These approaches do not address how the erosion affects the magnetic enhancement of sputtering.
The erosion problem has been complicated by the need to produce a highly ionized sputter flux so that the ionized sputter atoms can be electrostatically attracted deep within high aspect-ratio holes and be magnetically guided, as has been explained for an SIP reactor by Fu et al. in U.S. Pat. No. 6,306,265, incorporated herein by reference in its entirety. The apparatus described therein uses a small triangularly shaped magnetron to effect self-ionized sputtering, taking into account three factors. First, it is advantageous to reduce the size of the magnetron in order to concentrate the instantaneous sputtering to a small area of the target, thereby increasing the effective target power density. Secondly, the concentrated magnetic field of the small magnetron increases the plasma density adjacent the portion of the target being sputtered, thereby increasing the ionization fraction of the target atoms being sputtered. The ionized sputter flux is effective at being attracted deep within high aspect-ratio holes in the wafer. However, the target erosion affects the effective magnetic field at the target face being sputtered, thereby changing the sputtering rate and the ionization fraction. Thirdly, the small magnetron makes uniform target sputtering that much more difficult. Various magnetron shapes, e.g., triangular have been used to increase the uniformity of sputtering, but their uniformity is not complete. Instead, annular troughs are eroded into the target even in the case of rotary magnetrons.
Two major operational effects are readily evident in the use of conventional rotary magnetrons, particularly small magnetrons. First, as illustrated in the plot 26 of the graph of FIG. 3, the deposition rate falls from its initial rate with target usage, here measured in target kilowatt-hours of cumulative power applied to the target since it was fresh. The target usage corresponds to both the amount of target that has been eroded since the target was put into service with a substantially planar and uneroded surface and to the number of wafers that have been deposited in a repetitive process. We believe that the decrease arises at least indirectly from the target erosion in which the target surface being sputtered is no longer optimized for the magnetic field since its separation from the magnetron is varying. The sputtering degradation can be compensated by either increasing the length or sputtering or Increasing the target power. Secondly, the non-uniformity of sputtering reduces the lifetime of the target to a number N1 at which the erosion trough maximum approaches the target backing plate or, in the case of an integral target, a minimum thickness of the target. At this point, to prevent either sputter deposition of the backing material or breakthrough of the target, the target must be discarded even though substantial target material survives away from the erosion troughs. Costs would be saved for target purchase, operator time, and production throughput if the target lifetime is increased.
Hong et al. have presented a planetary magnetron as a solution to the uniformity problem for a high-density plasma reactor in U.S. patent application Ser. No. 10/152,494, filed May 21, 2002, now published as Application Publication 2003-0217913, and incorporated herein by reference in its entirety. As illustrated in the cross-sectional view of FIG. 4, a plasma reactor 30 has a fairly conventional lower reactor including a reactor wall 32 which supports a sputtering target 34 through an adapter 36 and isolator 38 in opposition to a pedestal electrode 40 supporting the wafer 42 to be sputter deposited with the material of the target 34. A vacuum pump system 44 pumps the vacuum chamber to a level of a few milliTorr or less while a gas source 46 supplies a working gas such as argon through a mass flow controller 48. A clamp ring 50 holds the wafer 42 to the pedestal electrode 40 although an electrostatic chuck may alternatively be used. An electrically grounded shield 52 protects the reactor walls 32 and further acts as an anode in opposition to the target 34 while a DC power supply 54 negatively biases the target 34 to a few hundred volts to excite the argon working gas into a plasma. The positively charged argon ions are accelerated to the negatively biased target 34, which they strike and dislodge or sputter atoms of the target material. The sputtered atoms are ejected from the target 34 with fairly high energy in a wide beam pattern and thereafter strike and stick to the wafer 42. With sufficiently high target power and high plasma density, a substantial fraction of the sputtered atoms are ionized. Preferably, an RF power supply 58, for instance oscillating at 13.56 MHz, biases the pedestal electrode 40 through a capacitive coupling circuit 60 such that a negative DC self-bias develops on the wafer 42, which accelerates the positively charged sputter ions deep within high-aspect ratio holes being sputter coated.
According to the invention, a magnetron 70 positioned in back of the target 34 projects its magnetic field in front of the target 34 to create a high-density plasma region 72, which greatly increases the sputtering rate of the target 34. If the plasma density is high enough, a substantial fraction of sputtered atoms are ionized, which allows additional control over the sputter deposition. Ionization effects are particularly pronounced in sputtering copper, which has a high self-sputtering yield, as copper ions are attracted back to the copper target and sputter further copper. The self-sputtering allows the argon pressure to be reduced, thereby reducing wafer heating by argon ions and reducing argon scattering of copper atoms, whether ionized or neutral, as they travel from the target 34 to the wafer 42.
In the described embodiment, the magnetron 70 is substantially circular and includes an inner magnetic pole 74 of one magnetic polarization with respect to and extending along a central axis 76 of the chamber 32 as well as the target 34 and pedestal electrode 40. It further includes an annular outer pole 78 surrounding the inner pole 74 and of the opposed magnetic polarity along the central axis 76. A magnetic yoke 80 magnetically couples the two poles 74, 78 and is supported on a carrier 81. The total magnetic intensity of the outer pole 78 is substantially greater than that of the inner pole 74, for example by a factor of greater than 1.5 or 2.0, to produce an unbalanced magnetron which projects its unbalanced magnetic portion towards the wafer 42 to thereby confine the plasma and also guide sputtered ions towards the wafer 42. Typically, the outer pole 78 is composed of plural cylindrical magnets arranged in a circle and having a common annular pole piece on the side facing the target 34. The inner pole 74 may be composed of one or more magnets, preferably with a common pole piece. Other forms of magnetrons are encompassed by the invention.
The high plasma densities achieved by this configuration as well as that of Fu et al. are achieved in part by minimizing the area of the magnetron 70. The encompassing area of the magnetron 70 is typically less than 10% of the area of the target 34 being scanned by the magnetron 70. The magnetron/target area ratio may be less than 5% or even less than 2% if uniform sputtering is otherwise maintained. As a result, only a small area of the target 34 is subject to an increased target power density and resultant intensive sputtering. That is, the sputtering at any instant of time is highly non-uniform. To compensate for the non-uniformity, a rotary drive shaft 82 rotated by a drive source 84 and supporting the magnetron 70 circumferentially scans the magnetron 70 about the chamber axis 76. However, as has been described with respect to the reactor of Fu et al., the resultant annular troughs in the target may produce significant radial non-uniformity in the sputtering.
Hong et al. significantly reduce the sputtering non-uniformity by the use of a planetary scanning mechanism 90 to cause the magnetron 70 to move along a planetary or other epicyclic path over the back of the target 34 with respect to the central axis 76. Their preferred planetary gear mechanism 90 for achieving planetary motion includes, as additionally and more completely illustrated in FIG. 5, a fixed gear 92 fixed to a housing 94 and a drive plate 96 fixed to the rotary shaft 82. In the reactor of Hong et al., the housing 94 is stationary. The drive plate 96 rotatably supports an idler gear 98 which engages the fixed gear 92. The drive plate 96 also rotatably supports a follower gear 100 engaged with the idler gear 98. A shaft 102 of the follower gear 100 is fixed also to the carrier 81 so that the magnetron 70 supported on the carrier 81 away from the follower shaft 102 rotates with the follower gear 100 as it rotates about the fixed gear 92 to execute the planetary motion. Counterweights 110, 112 are fixed to the non-operative ends of the drive plate 96 and the carrier 81 to reduce bending and shimmy on the rotary drive shaft 82 and the follower shaft 102. Particularly in copper sputtering which achieves a high ionization ratio Cu+/Cu0 of sputtered copper ions, the sputter reactor 30 of FIG. 4 advantageously includes a magnetic coil or magnet ring 114 annular about the central axis 76 to guide the copper ions to the wafer 42.
Because the DC power supply 54 delivers a significant amount of power to the target 34 and a high flux of energetic ions bombard the target 34 thereby heating the target 34, it is conventional to immerse the magnetron 70 as well as the planetary mechanism 90 in a cooling water bath 116 enclosed in a tank 118 sealed to the target 34 and the fixed drive-shaft housing 94. Unillustrated fluid lines connect the bath 116 with a chiller to recirculate chilled deionized water or other cooling fluid to the bath 118.
The planetary magnetron scanning, because of its convolute path across the target 34, greatly improves the uniformity of target erosion so that the target 34 is more uniformly eroded and results in a nearly planar sputtering surface even as the target is eroded. As a result, the target utilization is greatly improved. Nonetheless, as the target 34 erodes generally uniformly, the magnetic field at its sputtering face is changing and apparently on average decreasing. The change affects the sputtering rate, which as described above has been observed to decrease. The plots presented in FIG. 3 are speculative. Actual experimental data are presented in FIG. 6. Plot 120 presents the measured deposition rate for copper in the planetary magnetron chamber of FIG. 4 having an axially fixed magnetron and with 28 kW of DC target power and 600 W of RF bias power as a function of target usage in kilowatt-hours. Plot 121 presents the deposition rate for a small axially fixed magnetron executing simple rotary motion, as described by Fu et al., with 56 kW of DC target power. Although the fall off in the simple rotary chamber is not as great in the planetary chamber, it is still significant. It is pointed out, however, that it may be advantageous to more heavily sputter the outer regions of the target 34, particularly when the target/wafer spacing is relatively small in order to compensate for the geometric effect of greater deposition at the wafer center. Such intended non-uniformity can be achieved by adjusting the length of the rotation arms in a planetary chamber or by changing the shape or radial position of the magnetron in a simple rotary chamber. Even in this case, the deposition rate decreases with target usage.
A second set of non-uniformity problems is not immediately addressed by the planetary scanning mechanism. The small area of the magnetron 70 advantageously produces a high target power density and high plasma density and hence increases sputtering rate and increases the fraction of ionized sputter atoms which are drawn deep within high aspect-ratio holes to coat the sides and bottom of via holes. However, the magnetic field and hence the plasma density depend upon the distance between the target sputtering surface and the magnetron. As a result, as the target 34 is being sputtered, even if uniformly, the plasma density is changing and hence the sputtering rate and the ionization rate upon which the via sidewall coverage depends are changing. The effect is exacerbated for a small magnetron because the gradient of the magnet field is greater. As a result, the changing magnetic field and plasma density destabilizes the process causing variation in bottom and sidewall coverages across the lifetime of the target. It has generally been accepted that the high-performance sputtering is different at the end of the lifetime of the target than at the beginning. Plot 122 in FIG. 7 shows the measured target voltage and plot 123 in FIG. 8 shows the measured mean bias voltage with respect to target usage for the axially fixed planetary magnetron with the aforementioned values of target and bias power. There is a significant rise in the target voltage and the magnitude of the bias voltage with increased sputtering. However, the bias voltage is subject to fluctuations of about ±20V with the maximum magnitude greatly increasing to about 150V at maximum usage. The instability is readily apparent from the plot 122 of FIG. 7 for target voltage and the plot 123 of FIG. 8 for bias power. The change of sputtering rate can be compensated by increasing the sputtering duration, but this does not address the sidewall coverage. In any case, the increased sputtering period decreases throughput and introduces another variable into the queuing plan. The variation in plasma density because of reduced magnetic field can be partially compensated by increasing the target power. Such power compensation however involves an ad hoc relationship which needs to be determined for each set of conditions and also reduces the ability to maximize plasma densities and sputtering rates with limited power supplies.
Halsey et al. in U.S. Pat. No. 5,855,744 show an apparatus for deforming a linear magnetron as it scans across a rectangular target. In one embodiment, multiple actuators moving shafts along multiple respective axes deform the magnetron. Mizouchi et al. in U.S. Pat. No. 6,461,485 discloses a single vertical actuator for compensating for end effects in linear scanning.
Demaray et al. in U.S. Pat. No. 5,252,194 discloses a slider mechanism for vertically moving a large magnetron to adjust the magnetic field at the front of the target.
Schultheiss et al. in U.S. Pat. No. 4,927,513 discloses a magnetron lift mechanism to control magnetic properties of sputtered layers.

Mechanism for varying the spacing between sputter magnetron and target


The present invention provides a human growth factor receptor binding protein (HSTPK) and polynucleotides which encode HSTPK. The invention also provides expression vectors, host cells, agonists, antisense molecules, antibodies, or antagonists. The invention also provides methods for producing HSTPK and for treating disorders associated with expression of HSTPK.

Kinases regulate many different cell proliferation, differentiation, and signaling processes by adding phosphate groups to proteins. Uncontrolled signaling has been implicated in a variety of disease conditions including inflammation, cancer, arteriosclerosis, and psoriasis. Reversible protein phosphorylation is the main strategy for controlling activities of eukaryotic cells. It is estimated that more than 1000 of the 10,000 proteins active in a typical mammalian cell are phosphorylated. The high energy phosphate which drives activation is generally transferred from adenosine triphosphate molecules (ATP) to a particular protein by protein kinases and removed from that protein by protein phosphatases.
Phosphorylation occurs in response to extracellular signals (hormones, neurotransmitters, growth and differentiation factors, etc.), cell cycle checkpoints, and environmental or nutritional stresses, and is roughly analogous to turning on a molecular switch. When the switch goes on, the appropriate protein kinase activates a metabolic enzyme, regulatory protein, receptor, cytoskeletal protein, ion channel or pump, or transcription factor.
The kinases comprise the largest known protein group, a superfamily of enzymes with widely varied functions and specificities. Kinases are usually named after their substrate, regulatory molecules, or after some aspect of a mutant phenotype. With regard to substrates, the protein kinases may be roughly divided into two groups those that phosphorylate tyrosine residues (protein tyrosine kinases PTK) and those that phosphorylate serine or threonine residues (serine/threonine kinases STK). A few protein kinases have dual specificity and phosphorylate threonine and tyrosine residues. Almost all kinases contain a similar 250-300 amino acid catalytic domain. The N-terminal domain, which contains subdomains I-IV, generally folds into a two-lobed structure which binds and orients the ATP (or GTP) donor molecule. The larger C terminal lobe, which contains subdomains VI A through XI, binds the protein substrate and carries out the transfer of the gamma phosphate from ATP to the hydroxyl group of a serine, threonine, or tyrosine residue. Subdomain V spans the two lobes.
The kinases may be categorized into families by the different amino acid sequences (generally between 5 and 100 residues) located on either side of, or inserted into loops of, the kinase domain. These added amino acid sequences allow the regulation of each kinase as it recognizes and interacts with a target protein. The primary structure of the kinase domain is conserved and can be further subdivided into 11 subdomains. Each of the 11 subdomains contains specific residues and motifs or patterns of amino acids that are characteristic of that subdomain and are highly conserved (Hardie, G. and Hanks, S. (1995) The Protein Kinase Facts Books, Vol I:7-20 Academic Press, San Diego, Calif.).
The second messenger dependent protein kinases primarily mediate the effects of second messengers such as cyclic AMP (cAMP), cyclic GMP, inositol triphosphate, phosphatidylinositol, 3,4,5-triphosphate, cyclic ADPribose, arachidonic acid, and diacylglycerol. The cAMP dependent protein kinases (PKAs) are important members of the STK family. cAMP is an intracellular mediator of hormone action in all procaryotic and animal cells that have been studied. Such hormone-induced cellular responses include thyroid hormone secretion, cortisol secretion, progesterone secretion, glycogen breakdown, bone resorption, and regulation of heart rate and force of heart muscle contraction. PKA is found in all animal cells and is thought to account for the effects of cAMP in most of these cells. Altered PKA expression is implicated in a variety of disorders and diseases including cancer, thyroid disorders, diabetes, atherosclerosis, and cardiovascular disease (Isselbacher, K. J. et al. (1994) Harrison's Principles of Internal Medicine, Vol. I and II:416-431, 1887 McGraw-Hill, New York, N.Y.).
The mitogen-activated protein (MAP) kinases are also members of the STK family. MAP kinases also regulate intracellular signaling pathways and mediate signal transduction from the cell surface to the nucleus via phosphorylation cascades. Several subgroups have been identified, and each manifests different substrate specificities and responds to distinct extracellular stimuli (Egan, S. E. and Weinberg, R. A. (1993) Nature 365:781-783). MAP kinase signaling pathways are present in mammalian cells as well as in yeast. The Extracellular stimuli which activate mammalian pathways include epidermal growth factor (EGF), ultraviolet light, hyperosmolar medium, heat shock, endotoxic lipopolysaccharide (LPS), and pro-inflammatory cytokines such as tumor necrosis factor (TNF) and interleukin-1 (IL-1). Altered MAP kinase expression can therefore be implicated in a variety of disease conditions including cancer, inflammation, immune disorders, and disorders affecting growth and development.
The discovery of polynucleotides encoding serine/threonine protein kinases and the molecules themselves provide a means to investigate cell proliferation and differentiation under normal and disease conditions. Discovery of a novel serine/threonine protein kinase satisfies a need in the art by providing new compositions useful in the diagnosis and treatment of cancer and smooth muscle disorders.


The invented artificial limb includes a shin, ankle and foot. The shin includes a first mount, a second mount positioned below the first mount, and a plurality of rods extending between the first and second mounts, where at least one rod is a load bearing rod. The foot includes an elongate member having a toe section and a heel section. In many applications, the elongate member is arched. The shin is coupled to the foot by an ankle. The ankle allows the shin to rotate around an axis substantially perpendicular to a line between the toe and heel sections of the foot. A rotation controlling element such as an elastic band or a compression spring is connected to both the ankle and to the elongate member to restrict rotation of the shin toward the heel section of the foot. The ankle may also allow the shin to move around a second axis to simulate lateral rotation of the ankle. In the preferred embodiment, the rods of the shin and the elongate member of the foot are flexible to provide a more comfortable and responsive artificial limb.

A prosthetic device or prosthesis is an artificial substitute for a missing part of the body such as a limb. Numerous different prostheses have been developed, each trying to replicate the function and appearance of the replaced body part.
Lower leg prostheses present unique problems. They must be strong enough to support the weight of a person and to withstand the forces encountered when walking or running. But they must also be light enough so that they can be used comfortably. Additionally, an increasing number of lower-limb amputees desire to participate in athletic activities. Thus, lower leg prostheses must be strong enough to accommodate athletic activity while remaining comfortable to the user. The invented artificial limb addresses those problems.

Artificial limb including a shin, ankle and foot