A multi-function oxygen mask is disclosed which generally comprises a mask body and a gas delivery adapter. The mask body forms an internal cavity configured to cover a nose and mouth of a patient. A nasal chamber is formed in the upper portion of the mask body, the nasal chamber includes an upper portion, a lower portion and a gas delivery adapter aperture adjacent the lower portion of the nasal chamber. An access aperture is formed through and adjacent to the lower portion of the mask body. The access aperture is configured to permit access to the mouth of a patient. The gas delivery adapter has a general tubular structure and includes a first end an opposing second end, the first end of the gas delivery adapter is coupled to the gas delivery adapter aperture. An oxygen supply port radially extends outward from the gas delivery adapter and adjacent to the first end of the gas delivery adapter. The oxygen supply port further includes an external inlet portion, an outlet portion positioned within a volumetric space of the gas delivery adapter and a diverter member adjacent to the outlet portion. The diverter member is configured to direct a flow towards the first end of the gas delivery adapter. A meter-dose inhaler port radially extends outward from the gas delivery adapter. Finally, the gas delivery adapter includes a meter-dose inhaler port and a nebulizer port.

Currently, a wide variety of oxygen masks are commercially available, varying in construction, style, and material, depending upon the specific use or procedure employed. The basic oxygen mask that is available today uses neither a valve nor a reservoir bag. Exhaled air from the lungs of the patient is usually vented through holes in the body of the mask. In view of its convenience and relative comfort, the basic oxygen mask is frequently used whenever moderate oxygen concentrations are desired for short periods of time. This might occur, for example, during the postoperative recovery state of a patient. Such a mask might also be used, for example, during either temporary or interim respiratory therapy when a patient is being weaned from continuous oxygen administration.
In many postoperative states and various medical cases, a patient may require multiple treatments while simultaneously receiving oxygen therapy. For example a patient may need a naso-gastric tube, suctioning, oral care, nebulizer treatment, endoscopies, cooled/headed aerosol mist, aerosol delivered medication (Meter-Dose Inhaler "MDI") or combinations thereof. In the past, a medical provider typically would have to use a specialty mask specifically designed for the medical treatment being delivered to the patient. While this approach is somewhat effective, it presents several substantial drawbacks. Firstly, this approach requires the provider to inventory several different types of oxygen masks resulting in increased overhead costs. Secondly, in the situation where the patient requires multiple types of treatments, the patient will likely have multiple masks at their bedside, which is psychologically intimidating. Thirdly, a patient may have an emergency requirement for a specific treatment and the time spent locating and acquiring the specific type of oxygen mask may compromise the medical condition/treatment of the patient. Fourthly, the patient may have difficulty communicating, eating or drinking, while maintaining proper oxygen concentration, because known oxygen masks frequently have to be removed prior to these activities. Finally, oxygen masks currently available, including specialty masks, have difficulty in supplying high oxygen concentrations at low volumetric flow rates.
The standard oxygen mask used to provide oxygen treatment to a patient is one known device, while somewhat useful, presents substantial drawbacks. This type of oxygen mask is generally a single-purpose mask and provides very limited functionality. This known device is generally devoid of provisions for nebulizer treatments, aerosol administered medications (MDI), naso-gastric tube placement, cooled/heated aerosol misting, patient comfort/communication or combinations thereof. Further, these known devices frequently underperform when high oxygen concentrations at low volumetric flow rates are required.
Another known solution is an oxygen venturi mask with nebulizer capability. This known solution, while somewhat useful, presents substantial drawbacks. This type of oxygen mask is generally a specialty mask and provides very limited functionality. This known device is generally devoid of provisions for aerosol administered medications (MDI), naso-gastric tube placement, suctioning, endoscopies, oral care, eating/drinking, patient comfort/communication or combinations thereof. Further, this known device frequently underperforms when high oxygen concentrations at low volumetric flow rates are required.
Also known, is an oxygen aerosol mask with nebulizer that facilitates nebulizer and aerosol misting treatments. This known solution, while somewhat useful, presents substantial drawbacks. This type of oxygen mask is generally a specialty mask and provides very limited functionality. This known device is generally devoid of provisions for aerosol administered medications (MDI), naso-gastric tube placement, suctioning, endoscopies, oral care, eating/drinking, patient comfort/communication or combinations thereof. Further, this known device frequently underperforms when high oxygen concentrations at low volumetric flow rates are required.
A partial oxygen non-rebreather mask with nebulizer is another known solution and while somewhat useful, presents substantial drawbacks. This type of oxygen mask is generally a specialty mask and provides very limited functionality. This known device is generally devoid of provisions for naso-gastric tube placement, suctioning, endoscopies, oral care, eating/drinking, patient comfort/communication or combinations thereof. Additionally, this type of oxygen mask is generally a large device that covers a significant portion of the face of a patient and increases the feeling of claustrophobia. Further, this known device frequently underperforms when high oxygen concentrations at low volumetric flow rates are required
Efforts to provide a multi-function oxygen mask that overcomes the drawbacks in the prior art have not met with significant success to date. As a result, there is a need in the art for an oxygen mask that provides increased functionality with multiple medical treatments, increases patient comfort and reduces supply inventory/expenditures.


If a wireless device does not know how many data contexts can be supported, then the wireless device might attempt to establish more data contexts than are supported. Such attempt would normally be rejected. However, the signalling involved in the attempt to establish another data context and the rejection of that attempt is considered wasteful. Embodiments of the present disclosure allow such waste to be reduced or avoided by signalling to the wireless device when the maximum number of data contexts is reached or when it is about to be reached. Such signalling can occur before any attempt to establish more data contexts than are supported. Thus, wasteful signaling involved with attempting to establish more data contexts can be avoided.

A wireless device may communicate with a wireless network using one or more data contexts between the wireless device and a network node. The data contexts can for example include PDP (Packet Data Protocol) contexts or EPS (Evolved Packet System) bearer contexts. There may be many data contexts between the wireless device and the network node. The number of data contexts that can be supported for the wireless device is limited by various factors. Upon an attempt to exceed the limit, such attempt will normally be rejected.
Details of EPS bearer contexts can be found in 3GPP TS 24.301 V11.5.0 (2012-12) Technical Specification 3rd Generation Partnership Project; Technical Specification Group Core Network and Terminals; Non-Access-Stratum (NAS) protocol for Evolved Packet System (EPS); Stage 3 (Release 11), the entire disclosure of which is incorporated herein by reference and hereinafter referred to as "3GPP TS 24.301".
Details of PDP contexts can be found in 3GPP TS 24.008 V12.0.0 (2012-12) Technical Specification 3rd Generation Partnership Project; Technical Specification Group Core Network and Terminals; Mobile radio interface Layer 3 specification; Core network protocols; Stage 3 (Release 12), the entire disclosure of which is incorporated herein by reference and hereinafter referred to as "3GPP TS 24.008".

System and method for reporting that a maximum number of data contexts is reached


A method of identifying an accurate assembly of a component onto a workpiece to an operator includes the use of a laser projector and a headset or goggles. The laser projector projects laser images relative to the workpiece. The headset or goggles includes an imaging device and a display element. A location of the laser projector, the imaging device and the display element is registered in a common coordinate system relative to the workpiece. The imaging device generates an image of a view of the workpiece appearing in the display element when viewed by the operator though the display element. A computer generated image of the component is overlaid upon the image of the workpiece being disposed in a geometrically accurate location on the image of the workpiece. The image of the workpiece appearing in the display element is registered to the three dimensional coordinate system defined relative to the workpiece.

Manufacturers of complex workpieces and assemblies requiring a high degree of assembly accuracy are continuously looking for improved processes with the use of assembly aids. While conventional manufacturing processes have historically relied on mechanical fixtures as assembly aids that register to a workpiece at a fixed location, these mechanical fixtures have proven difficult to work with and do not provide sufficient accuracy whenever decreasing tolerances are required of complex devices. Alternatively, manual measurement of attachment locations using various reference features or templates applied to the workpiece have also been used. The expense, labor intensive requirements, and propensity for error continue to be a challenge to manufacturing companies.
FIG. 1 shows a schematic view of a workpiece 10. The workpiece 10 includes a component (or subassembly) 12 mated to a surface 16 at a geometrically significant location. As set forth above, accurate location of the component 12 to the workpiece 10 has been achieved with the use of a fixture. Accuracy is particularly inadequate when the fixture is large or heavy making it difficult for an operator to position properly on the workpiece 10.
More recently, optical templates have been projected directly onto workpieces providing an optical image to locate placement a component onto the workpiece 10. This is represented in FIG. 2 where the workpiece 10 is subject to a laser projector 12 that projects a template 14 onto a pre-determined surface 16 of the workpiece. One such example of a laser projector 12 used to project a template 14 onto workpiece 10 is disclosed in U.S. Pat. No. 9,200,899 LASER PROJECTION SYSTEM AND METHOD, the contents of which are incorporated herein by reference. In this example, the position of the projector 12 relative to the workpiece along with a three dimensional geometry of the workpiece and profile of the attachment location are predetermined. Making use of these elements, an outline of an attachment profile in the way of an optical template 14 is accurately projected onto the desired workpiece surface 16.
Systems used to project templates 14 onto a workpiece have proven highly accurate. However, there are limitations to relying merely on a laser projection of a template 13 restricting broader use of optical templates in the marketplace. For example, it is sometimes difficult or impossible to locate a workpiece within a three dimensional coordinate system relative to a laser projector. In addition, arbitrary assembly tasks traditionally make use of mechanical fixtures placed in arbitrary three dimensional locations are not always uniquely suited to laser projection templates 14. In some circumstances, a support surface is available, but the only accurate projection of a profile template is capable upon a first surface of the workpiece. In addition, the three dimensional component affixed to a workpiece prevents projection of a pattern that "looks like" the component when it is necessary to verify correct component selection, placement or orientation.
Projection of a laser template 14 is typically flattened to be received upon a surface of a workpiece. Presently, laser projectors are incapable of providing an accurate focal point at a location spaced from the surface 16 of a workpiece. This prevents projection of a true location of the component according to a computer aided design model that is three dimensional or includes relevant geometrically important features that would be floating in space above the surface 16 of the workpiece 10.
Therefore, it would be desirable to provide a method for overlaying an image of a component to be assembled in a workpiece that provides three dimensional characteristics of that component relative to the workpiece.

Virtual spatially registered video overlay display


A yield expectation determination is dynamically provided during manufacturing of a lot of integrated circuits. In one embodiment, the determination includes initially establishing a yield expectation for a lot, which can be based on a process grade, and adjusting the yield expectation during manufacturing based on test data from the kerf of a wafer. In addition, the yield expectation can be adjusted based on inspection data from optical and SEM inspection tools during manufacturing. Correlation coefficient models that correlate kerf data and inspection data to a yield expectation adjustment are used to dynamically adjust the yield expectation, resulting in a more accurate yield projection during manufacturing. The correlation coefficient models and/or process grade estimates are updated based on actual yield from a previous lot, thus further improving yield expectation accuracy.

1. Technical Field
The invention relates generally to yield modeling, and more particularly, to a method, system and program product for dynamically determining a yield expectation during manufacturing of a lot of a product.
2. Background Art
Accurate yield expectation determination of a lot of integrated circuits (ICs) is a significant but difficult task in an IC manufacturing facility. For example, vertically integrated semiconductor fabrication of a forty-plus mask level microprocessor has a cycle time of approximately 120 days from a wafer start to shipping a tested module to the customer. Due to this cycle time, there is an uncertainty in projecting a yield to the customer. Overestimating yield will cause a supply shortfall and underestimating yield will result in inventory and lost revenue. IC fabricators presently use yield models based on critical area, circuit count, defect density data, and/or electrical test data to project yields. For example, U.S. Pat. No. 6,610,550, entitled "Methods and Apparatus for Correlating Error Model With Defect Data" discloses one of these methods. For semiconductor fabrication at the 90 nm node, yield is highly variable within a wafer lot and lot-to-lot, dependant on not only defect density but systematic detractors, wafer substrate, tool variations and process changes. This creates a large uncertainty in the yield expectation (e.g., +/−50%) making it difficult to balance customer serviceability and fabricator revenue, especially for an IC fabricator having multiple part numbers and/or multiple customers.
In view of the foregoing, there is a need in the art for an improved way to determine a yield expectation in an IC manufacturing facility that does not suffer from one or more of the problems of the related art.

Dynamically determining yield expectation

International Business Machines Corporation


A semiconductor structure has a substrate having a trench, an isolation dielectric in the trench, and a stress buffer layer, between the substrate and the dielectric. Semiconductor devices containing the semiconductor structure may have higher reliability, and may have a reduced manufacturing costs per device.

The present invention relates to an isolation technology for semiconductor devices. A variety of methods and structures have been used to isolate areas on semiconductor devices. One conventional technology is based on localized oxidation of silicon (LOCOS), shown in FIG. 1. In FIG. 1, on the silicon substrate 102 is a field oxide 104 that acts to isolate an active area of the semiconductor device; the field oxide is contiguous with the gate oxide 110 on the active region of the silicon substrate. The active area in this illustration includes a layer of silicon nitride 106. The field oxide encroaches on the active area in the shape of a bird's beak 108, before narrowing into the gate oxide. This large encroachment distorts the active region, and interferes with the submicron lithography necessary to construct elements in the active region.
Another widely used isolation technique is silicon trench isolation (STI), shown in FIG. 2. The field oxide 104 does not have the shape of a bird's beak where it narrows into the gate oxide 110 on the silicon substrate 102. FIGS. 3(a)-3(e) illustrate the step used to prepare the structure shown in FIG. 2. In FIG. 3(a) thermal oxidizing forms a thermal oxide layer 111 on the silicon substrate 102, followed by depositing a silicon nitride layer 106 using low pressure chemical vapor deposition (LPCVD). In FIG. 3(b) a photoresist layer 112 is applied, and patterned using a mask. Etching of those portions of the silicon nitride, thermal oxide and silicon substrate not covered by the photoresist layer, in a single operation, opens a trench 114.
In FIG. 3(c) the photoresist layer is first stripped, and the substrate is cleaned. A thin oxide layer 118 is then grown by dry oxidation of the exposed portions of the silicon substrate. An oxide layer 116 is then deposited into the trench and across the surface of the structure by chemical vapor deposition (CVD). In FIG. 3(d) chemical-mechanical polishing (CMP) planarizes the surface, leaving the oxide layer 116 only in the trench. In FIG. 3(e) the silicon nitride and thermal oxide layers are removed, and a gate oxide layer 110 is grown on the silicon substrate.
After forming the field oxide, additional processing is used to produce semiconductor devices on the substrate. These subsequent processes include heating cycles, for example during CVD oxide desification or drive-in for preparing doped regions. Since there is mismatch between the thermal expansion of the substrate and the field oxide, stress is induced at the interface between them during heating. If the temperature is sufficiently high during heating such that the yield point of the substrate is reduced to a value comparable to the strain induced by the heating, then the substrate will relax at the high temperature and lock the strain in at room temperature. The locked in strain might cause dislocations and a strained surface of silicon at the interface, producing high leakage rates during operation of devices. For example, the expansion coefficient between silicon dioxide and silicon at 800° C. is about 0.26%, which is beyond the yield point of silicon at 800° C., and therefore plastic deformation of the silicon will take place at the interface; upon cooling to room temperature strain will be present at the interface.
U.S. Pat. No. 4,851,662 to Park et al. discloses a method of forming a isolation trench in which a nitride liner formed in a trench is protected during subsequent plasma processing. After forming the nitride liner, a high temperature oxide layer is formed on the nitride liner using a first process. Then, upon forming the high temperature oxide layer, plasma processing is performed on the surface of the high temperature oxide layer. After the plasma processing, a trench fill dielectric layer to fill the trench is formed on the high temperature oxide layer using a second process. Park et al. forms two types of layers using two process steps in addition to plasma processing in order to fill the trench upon depositing the nitride liner.

Isolation technology for submicron semiconductor devices


A putter head includes a face portion, at least one first aiming marker, and a contrast portion. The first aiming marker appears substantially parallel to a face surface of the face portion. The contrast portion substantially contrasts with the first aiming marker in appearance. The contrast portion is disposed adjacent to the face portion.

1. Field of the Invention
The invention relates to a putter head and, more particularly, to a putter head, which is easily set in a position and is superior in stability at impact.
2. Description of the Related Art
It is important in putting in golf to align a face surface square to a putting line (hereunder, this operation may be referred to as a "setting of a putter head to a line" square to the putting line). Usually, the "setting of the face to the line" is visually performed. However, face surfaces of some putter heads are easy to be aligned square to the putting line, and others are not, depending upon the shapes of the putter heads. Specifically, the more clearly lines parallel and perpendicular to the face surface is visible on the putter head, the more easily the "setting of the putter head to the line" is achieved. Representative examples of such a putter head are what are called an L-shaped putter head and a T-shaped putter head (for example, see JP 2001-9072 A).
Further, in the field of a golf putter, great importance is attached to the stability at impact. To enhance the stability at impact, generally, the width of the sole of the head and the depth of the center of gravity thereof are increased thereby to enlarge the sweet area thereof and to increase the moment of inertia thereof. A representative example of a putter head, whose stability at impact is enhanced by such means, is what is called a mallet putter head (see, for example, JP Hei. 9-38247 A).
Further, recently, there has been used a putter head of an unusual shape, which does not belong to the aforementioned categories, such as the L-shaped type, the T-shaped type, and the mallet type. A representative example of the putter head of the unusual shape is what is called a two-ball type putter head (for instance, see JP 2003-339926 A).


Disclosed is a system for pumping of fluid by a single pump from a plurality of storage tanks in situations where some of the tanks should be pumped simultaneously at predefined, equal or unequal flow rates, and where some of the tanks should be pumped sequentially, in an orderly manner. The system needs no restrictors or valves to determine the flow rate or the sequence of pumping. In some embodiments, the rate of flow out of the pump does not change when one tank becomes empty before another.

The present invention relates to a system for pumping fluid from multiple storage tanks and, in particular, it concerns a system for sequentially pumping fluid from multiple storage tanks using a single pump.
Various systems for pumping liquids from multiple sources to a single end point are known in the art. These include the use of separate pumps for each source, and a single pump coupled with separate on-off valves, or flow restrictors, associated with each source. Systems utilizing separate pumps suffer from extra cost and weight, along with the complexity of monitoring and actuating each pump when appropriate, especially if trying to synchronize the pumping rate so as to empty each of the tanks at substantially the same time. The issues of weight, monitoring and actuating is also true for systems using on-off valves to control the source of liquid flowing to the pump. Although flow restrictors do not allow for sequential emptying of a plurality of storage tanks, they provide a way to drain tanks of different volumes at different rates such that all of the tanks become empty at substantially the same time. When used with some liquids, such as aircraft fuel, these systems may create enough of a pressure drop after the flow restrictor to cause the fuel to vaporize in the fuel line before reaching the pump. Some of these systems are used in aircraft with the intention of pumping fuel from multiple fuel tanks located throughout the aircraft while maintaining the equilibrium of the aircraft.
It is known to provide gear pumps with multiple supply ports which supply liquid to the pump gears. The auxiliary supply ports of U.S. Pat. No. 3,083,819 to Mayes are configured as back-up or supplementary supply ports in case no, or insufficient, fuel is supplied to the pressurized primary supply port by a secondary pump located up stream from the main pump. All of the supply ports of Mayes receive fuel from a single tank. The injection port of Miles, U.S. Pat. No. 4,093,407, is configured to supply a limited quantity of a first liquid that will be mixed with a second liquid introduced at the primary supply port. During operation of the Miles pump the flow rate of the injected liquid is independent of the liquid flow rate caused by the gears of the pump. This requires additional flow control dedicated to the injection process. The liquids supplied to both ports are under pressure and both ports introduce liquids to the pumping gears during operation of the pump. U.S. Pat. No. 2,301,496, to Aldrich, discloses a gear pump in which liquid is introduced to the gear pump via a first supply port that is connected to a pressure release valve, such that liquid pumped out of the pump is reintroduced at the first supply port. Voids in the pumping volume of one of the gears, after the gear has passed the first supply port, are filled by liquid from the tank introduced by a second supply port that is connected to fuel tank. Therefore, the Aldrich system is essentially a circulation pump with a refill port that replaces any liquid lost from the system. The gear pump of U.S. Pat. No. 3,420,180, to Behrends et al., receives fluid from two sources, and includes a ratio-change passageway that provides a desired ratio of flow from the two sources. This arrangement is fine for a pump with only two supply ports connected to two different sources, it would, however, be inoperable in systems sequentially pumping from multiple tanks at different rates. The ratio-change passageway is also a problem for use with volatile liquids such as fuel where the pressure drop created in the passageway may cause the liquid to cavitate
The gear pumps of prior art cited above include multiple supply ports all of which are configured to supply fluid to the gears of a gear pump at all times during the operation of the pump with no consideration for sequential pumping from multiple sources. It should be noted that none of the above referenced prior art addresses a configuration whereby liquid is pumped from two or more tanks at different predefined flow rates by a single pump in such a way that there is no restriction likely to give rise to cavitation of the liquid being pumped.
There is therefore a need for a system for sequentially and/or parallel pumping of fluid from multiple storage tanks, without causing cavitation of the liquid, utilizing a single pump having multiple supply ports. It would be beneficial if the system also provide for pumping from different tanks at different predefined flow rates. It would be of further benefit if the system were configured so as to maintain the equilibrium of the platform on which the storage tanks are deployed.

Multiple tank fluid pumping system using a single pump


A method for forming images is provided, comprising the steps of:. i) providing a substrate comprising reactive group RGB, PA1 ii) providing toner particles comprising reactive group RGA, PA1 iii) image-wise depositing the toner particles on the substrate and PA1 iv) reacting the reactive group RGA with the reactive group RGB so as to harden the toner particles.. The reactive group RGA and the reactive group RGB are a member selected from the group consisting of epoxy groups, aldehyde groups, hydroxyl groups, carboxyl groups, mercapto groups, amino groups and amide groups and are chosen such as to form a reaction pair.

In imaging methods as e.g. electro(photo)graphy, magnetography, ionography, etc. a latent image is formed that is developed by attraction of so called toner particles. Afterwards the developed latent image (toner image) is transferred to a final substrate and fused to this substrate. In DEP the so called toner particles are imagewise deposited directly on a final substrate and fused to this substrate.
Toner particles are basically polymeric particles comprising a polymeric resin as main component and various ingredients mixed with said toner resin. Apart from colourless toners, which are used e.g. for finishing function, the toner particles comprise at least one black and/or colouring substances, e.g., coloured pigment.
In the different imaging methods, described above, the toner particles can be present in a liquid or in a dry developer composition.
In most cases the use of dry developer compositions is preferred. The main advantage of using a dry developer composition resides in the absence of the need to eliminate the liquid phase after development. The avoidance of the need to evacuate (mainly organic) liquids is desirable both from an economical standpoint and from an ecological standpoint.
However, in all techniques using dry particulate material to form an image, the images are very frequently built up by application of particulate marking elements in multiple, superimposed layers onto the substrate. The problems associated with multiple, superimposed layers of particulate marking particles that are in one way or another fixed on a substrate are manifold, not only with respect to image quality but also with respect to image stability and with respect to mechanical issues.
In, e.g. EP-A 471 894, EP-A 554 981, U.S. Pat. No. 4,828,950 and U.S. Pat. No. 4,885,603, it has been disclosed to apply a layer of transparent toner particles on top of the toner image to provide better resistance to physical damage. Also other means and ways to produce toner images that are very resistant to external influences, (e.g. mechanical influence, heat, contact with solvents, etc) have been proposed.
In, e.g., U.S. Pat. No. 3,723,114 the problem of storage properties of fused toner images is addressed, the main problem being the fact that the toner images can, depending on the storage conditions, become tacky after storage. The problem is solved by using in the toner resin a substantial portion of thermosetting polymers.
The use of photo-curable toners has been suggested in, e.g., U.S. Pat. No. 5,470,683 to produce toner images having better weather resistance. In that application, a capsule toner is provided having a core comprising a polymerisable compound, a polymerization initiator and other normal toner ingredients. The core is surrounded by a hard shell that breaks during the fixing step. After the fixing step the polymerisable compound is polymerized, in this particular disclosure, by low energy visible light. Although following the teachings of these disclosures leads to the production of toner layers that are not easily damaged, the nature of the solutions itself limits the variety of resins that can be used in the manufacturing of the toner. Therefore further improvements along the lines of the disclosures referred to above are desirable.

Method for producing cross-linked fixed toner images


A system and method are disclosed for rendering polygons. Parameter values may be rendered for only one sample position of a plurality of neighboring sample positions within a polygon. The parameter values rendered for the one sample position may then be transmitted to one or more memories and conditionally stored in a plurality of memory locations that correspond to the plurality of neighboring sample positions. Transmitting parameter values to one or more memories may be achieved in a single transaction. Depth values may be rendered for each sample position in the plurality of neighboring sample positions. Depth value data may be compressed. In some embodiments, the one or more memories may be configured to determine depth values for each of the neighboring sample positions.

1. Field of the Invention
This invention relates generally to the field of computer graphics and, more particularly, to a high performance graphics system which implements super-sampling.
2. Description of the Related Art
Early graphics systems were limited to two-dimensional (2D) graphics, were configured to compute a gray scale value for each pixel displayed, and acted as simple translators or interfaces to a display device. Modem high performance graphics systems, however, may support three-dimensional (3D) graphics, may include super-sampling, and may include capability for one or more special effects such as anti-aliasing, texturing, shading, fogging, alpha-blending, and specular highlighting. 3D graphics data may be several orders of magnitude larger than comparable 2D graphics data. 3D graphics data may include a set of information components for each vertex of the geometric primitives used to model the objects to be imaged.
In recent years, the demand for high performance graphics systems that can render complex three-dimensional (3D) objects and scenes has increased substantially. This increase is at least in part due to the demand for new applications such as computer-generated animation for motion pictures, virtual reality simulators/trainers, and interactive computer games. These new applications place tremendous computational loads upon graphics systems. Modern computer displays have also improved and have a significantly higher pixel resolution, greater color depth, and are able to display more complex images with higher refresh rates than earlier models. Consequently, modern high performance graphics systems incorporate graphics processors with a great deal of complexity and power, and the color value of one pixel may be the accumulated result of many calculations involving several models and mathematical approximations.
With each new generation of graphics system, there is more image data to process, the processing is more complex, and there is less time in which to process it. This need for more processing power may be addressed with a combination of one or more of additional hardware, more efficient hardware, more efficient algorithms, and/or selective applications of alternative algorithms.

Sample replication mode with depth value calculation


Two video signals, typically an original signal and a degraded version of the same signal, are analyzed firstly to identify perceptually relevant boundaries of elements forming video images depicted therein. These boundaries are then compared to determine the extent to which the properties of the boundaries defined in one image are preserved in the other, to generate an output indicative of the perceptual difference between the first and second signals. The boundaries may be defined by edges, color, luminance or texture contrasts, disparities between frames in a moving or stereoscopic image, or other means. The presence, absence, difference in clarity or difference in means of definition of the boundaries is indicative of the perceptual importance of the differences between the signals, and therefore of the extent to which any degradation of the signal will be perceived by the human viewer of the resulting degraded image. The results may also be weighted according to the perceptual importance of the image depicted—for example the features which identify a human face, and in particular those responsible for visual speech cues.

1. Technical Field
This invention relates to the analysis of the quality of video signals. It has a number of applications in monitoring the performance of video transmission equipment, either during development, under construction, or in service.
2. Related Art
As communications systems have increased in complexity it has become increasingly difficult to measure their performance objectively. Modern communications links frequently use data compression techniques to reduce the bandwidth required for transmission. When signals are compressed for more efficient transmission, conventional engineering metrics, such as signal-to-noise ratio or bit error rate, are unreliable indicators of the performance experienced by the human being who ultimately receives the signal. For example, two systems having similar bit-error rates may have markedly different effects on the quality of the data (sound or picture) presented to the end user, depending on which digital bits are lost. Other non-linear processes such as echo cancellation are also becoming increasingly common. The complexity of modern communications systems makes them unsuitable for analysis using conventional signal processing techniques. End-to-end assessment of network quality must be based on what the customer has, or would have, heard or seen.
The main benchmarks of viewer opinion are the subjective tests carried out to International Telecommunications Union standards P.800, "Methods for subjective determination of transmission quality", 1996 and P.911 "Subjective audiovisual quality assessment methods for multimedia applications", 1998. These measure perceived quality in controlled subjective experiments, in which several human subjects listen to each signal under test. This is impractical for use in the continuous monitoring of a network, and also compromises the privacy of the parties to the calls being monitored. To overcome these problems, auditory perceptual models such as those of the present applicant's International Patent Specifications WO 94/00922, WO95/01011, WO95/15035, WO97/05730, WO97/32428, WO98/53589 and WO98/53590 are being developed for measuring telephone network quality. These are objective performance metrics, but are designed to relate directly to perceived signal quality, by producing quality scorings similar to those which would have been reported by human subjects.
The prior art systems referred to above measure the quality of sound (audio) signals. The present invention is concerned with the application of similar principles to video signals. The basic principle, of emulating the human perceptual system (in this case the eye/brain system instead of the ear/brain system) is still used, but video signals and the human visual perceptual system are both much more complex, and raise new problems.
As with hearing, the human visual perception system has physiological properties that make some features present in visual stimuli very difficult or impossible to perceive. Compression processes, such as those established by JPEG (Joint Pictures Expert Group) and MPEG (Motion Pictures Expert Group) rely on these properties to reduce the amount of information to be transmitted in video signals (moving or still). Two compression schemes may result in similar losses of information, but the perceived quality of a compressed version of a given image may be very different according to which scheme was used. The quality of the resulting images cannot therefore be evaluated by simple comparison of the original and final signals. The properties of human vision have to be included in the assessment of perceived quality.
It is problematic to try and locate information from an image by mathematical processing of pixel values. The pixel intensity level becomes meaningful only when processed by the human subject's visual knowledge of objects and shapes. In this invention, mathematical solutions are used to extract information resembling that used by the eye-brain system as closely as possible.
A number of different approaches to visual modelling have been reported. These are specialised to particular applications, or to particular types of video distortion. For example, the MPEG compression system seeks to code the differences between successive frames. At periods of overload, when there are many differences between successive frames, this process reduces the pixel resolution, causing blocks of uniform colour and luminance to be produced. Karunasekera, A. S., and Kingsbury, N. G., in "A distortion measure for blocking artefacts in images based on human visual sensitivity", IEEE Transactions on Image Processing, Vol. 4, No. 6, pages 713-724, June 1995, propose a model which is especially designed to detect "blockiness" of this kind. However, such blockiness does not always signify an error, as the effect may have been introduced deliberately by the producer of the image, either for visual effect or to obliterate detail, such as the facial features of a person whose identity it is desired to conceal.
If the requirements of a wide range of applications, from high definition television to video conferencing and virtual reality, are to be met, a more complex architecture has to be used.
Some existing visual models have an elementary emulation of perceptual characteristics, referred to herein as a "perceptual stage". Examples are found in the Karunasekera reference already discussed, and Lukas, X. J., and Budrikis, Z. L., "Picture Quality Prediction Based on a Visual Model", IEEE Transactions on Communications, vol. com-30, No. 7, pp. 1679-1692 July 1982, in which a simple perceptual stage is designed around the basic principle that large errors will dominate subjectivity. Other approaches have also been considered, such as a model of the temporal aggregation of errors described by Tan, K. T., Ghanbari, M. and Pearson, D. E., "A video distortion meter", Informationstechnische Gesellschaft, Picture Coding Symposium, Berlin, September 1997. However, none of these approaches addresses the relative importance of all errors present in the image.

British Telecommunications public limited company


A leadframe, a semiconductor package, and methods of making the same are disclosed. A leadframe includes leads having an inner end segment. A first subset of the leads include a recess in a first surface of the inner end segment. A second subset of the leads include a recess in an opposite second surface of the inner end segment. The first subset leads are in an alternating lateral pattern with the second subset leads such that the recess of adjacent inner end segments are oriented in opposite directions. The recesses separate adjacent inner end segments in a vertical direction, thereby eliminating or reducing a need for horizontal spacing between adjacent inner end segments. In a semiconductor package, a semiconductor chip is electrically connected by a bond wire to the inner end segment of the leads. The bond wire is bonded within the recess of alternating leads.

1. Field of the Invention
The present invention relates to packages for semiconductor chips or other electronic devices, and leadframes for making the packages.
2. Description of Related Art
A typical package for a semiconductor chip includes an internal metal leadframe, which functions as a substrate for the package. The leadframe includes a central die pad and a plurality of leads that radiate outward from the die pad. A hardened, insulative encapsulant material covers the die, die pad, and an inner portion of each of the leads.
The semiconductor chip is mounted on the die pad and is electrically connected to the leads. In particular, the chip includes a plurality of bond pads, each of which is electrically connected by a bond wire or the like to an inner end segment that is at an inner end of one of the leads. An exposed portion of each lead extends outward from the encapsulant, and serves as an input/output terminal for the package.
In the market for semiconductor packaging today, there is a trend toward increased package functionality. This trend includes increasing the number of leads provided in a package. At the same time, there is a trend toward smaller, more compact packages. In keeping with these trends, ever finer leads and inner end segments are required. It can be difficult to meet this industry need while also keeping the cost of the package within reason. Limitations on known methods for making leads and inner end segments, such as chemical etching or mechanical stamping, also makes meeting industry needs difficult, as these methods have inherent limitations as to how fine and dense the leads and the inner end segments can be made. At the same time, the inner end segments must be wide enough to serve as a site for electrical connection to a wire or some other conductor that electrically connects the respective inner end segment to the chip. Accordingly, an improved method of making a leadframe is desirable.

Semiconductor package and leadframe with horizontal leads spaced in the vertical direction and method of making


In accordance with the present invention, ELISA methods for the measurement of NO levels in mammalian body fluids utilizing monoclonal antibodies directed against dithiocarbamates and related iron complexes are described. It has been found that conjugation of dithiocarbamates to a macromolecule produces immunogenic dithiocarbamate-macromolecule derivatives. Such derivatives can be used for the production (e.g., in rodents) of monoclonal antibodies directed against different forms of dithiocarbamates (e.g., free dithiocarbamates, as well as complexes thereof with iron and, optionally, nitric oxide). In contrast, non-derivatized dithiocarbamates alone are not immunogenic. The simple, easy and non-invasive ELISA methods for measurement of NO levels in body fluids will find a variety of uses, e.g., for diagnosis and monitoring of NO overproduction that has been associated with many inflammatory and infectious diseases.

Nitric oxide (NO), a gaseous free radical, was once considered mainly as an environmental pollutant from car exhausts and in city smog and cigarette smoke. This view toward nitric oxide was changed in 1987, the year in which NO was discovered to be produced in humans (see, for example, Ignarro et al., in Proc. Natl. Acad. Sci., USA, 84:9265-69 (1987) and Palmer et al., in Nature, 327:524-26 (1987)). First identified as an endothelium-derived relaxation factor, NO is now recognized as a new kind of cell signaling molecule that regulates the functions of many mammalian cells and tissues.
NO is generated by the enzymatic cleavage of L-arginine, catalyzed by the nitric oxide synthase enzyme (NOS; see, for example, Rodeberg et al., in Am. J. Surg., 170:292-303 (1995), and Bredt and Snyder in Ann. Rev. Biochem., 63:175-95 (1994)). Two major forms of NOS, constitutive and inducible enzymes, have been identified. Under physiological conditions, a low output of NO is produced by the constitutive, calcium-dependent NOS isoform (cNOS), which is present in numerous cells, including endothelium and neurons. This low level of nitric oxide is involved in a variety of regulatory processes, e.g., blood vessel homeostasis, neuronal communication and immune system functions. On the other hand, under pathophysiological conditions, a high output of NO is produced by the inducible, calcium-independent NOS isoform (iNOS), which is expressed in numerous cell types, including endothelial cells, smooth muscle cells and macrophages. These high levels of nitric oxide have been shown to be associated with many inflammatory and infectious diseases and conditions, such as septic shock, over expression of cytokines, diabetes, allograft rejection, inflammatory bowel disease, etc.
Nitric oxide is a potent vasodilator (see, for example, Palmer in Arch. Surg., 128:396-401 (1993) and Radomski & Moncada in Thromb. Haemos., 70:36-41 (1993)). For example, in blood, NO produced by the endothelium diffuses isotropically in all directions into adjacent tissues. As NO diffuses into the vascular smooth muscle, it binds to guanylate cyclase enzyme, which catalyzes the production of cGMP, inducing vasodilation (see, for example, Ignarro, L. J., Ann. Rev. Toxicol. 30:535-560 (1990); Moncada, S., Acta Physiol. Scand., 145:201-227 (1992); and Lowenstein and Snyder, Cell, 70:705-707 (1992)).
The overproduction of nitric oxide causes an extreme drop in blood pressure, resulting in insufficient tissue perfusion and organ failure, syndromes that are associated with many diseases and/or conditions (e.g., septic shock, stroke, over expression of cytokines, allograft rejection, and the like). The overproduction of nitric oxide is triggered by a number of stimuli, such as, the overproduction of inflammatory cytokines (e.g., the overproduction of interleukin-1, interferons, endotoxin, and the like). Additionally, the overproduction of NO has been found to be one of the major side-effects of cytokine therapy (see, for example, Miles et al., in Eur. J. Clin. Invest., 24:287-290 (1994) and Hibbs et al., in J. Clin. Invest., 89:867-877 (1992)). Thus, abnormally elevated nitric oxide levels have been associated with many inflammatory and infectious diseases.
The half-life of NO in vivo is only 3-5 seconds, a short lifetime that makes it very difficult to detect and quantify. Several biophysical techniques have been developed for the measurement of NO levels in aqueous solution. These include chemiluminescence assay (see, for example, Downes et al., Analyst, 101:742-748 (1976)), oxyhemoglobin assay (see, for example, Kelm and Schrader, Cir. Res., 66:1561-1575 (1990)), GC-MS detection (see, for example, Palmer et al., Nature (London), 327:524-526 (1987)), and nitrosyl-hemoglobin formation detected by electron paramagnetic resonance (EPR) spectroscopy at liquid nitrogen temperature (see, for example, Lancaster et al., Proc. Natl. Acad. Sci. USA, 87:1223:1227 (1990)).
Production of NO can also be indirectly detected by measuring its end products, NO.sub.2.sup.- /NO.sub.3.sup.- (see, for example, Palmer et al., supra). None of these techniques in their present forms, however, can be used for in vivo detection of NO production. Recently, an invasive electrochemical microsensor to detect NO levels in blood vessels of healthy human volunteers has been described (see, for example, Vallance et al., Lancet, 346:153-154 (1995)).
Dithiocarbamates are a class of low molecular-weight sulphur-containing compounds that are effective chelators (see, for example, Shinobu et al., Acta Pharmacol et Toxicol., 54:189-194 (1984)). For example, diethyldithiocarbamate (DETC) is used clinically for the treatment of nickel poisoning. Recently, it was found that N-methyl-D-glucamine dithiocarbamate (MGD) chelates with ferrous iron as a two-to-one (MGD).sub.2 -Fe! complex, which in turn interacts strongly with NO, forming a stable and water-soluble complex in aqueous solution, i.e., (MGD).sub.2 -Fe-NO! (see, for example, Lai & Komarov, FEBS Lett., 345:120-124 (1994)). The latter complex gives rise to a sharp three-line spectrum with g.sub.iso =2.04, characteristic of a nitrosyl-Fe-dithiocarbamate complex which can readily be detected by EPR spectroscopy at ambient temperatures. This method of detecting NO in body fluids in real time has recently been described by Lai in U.S. Pat. No. 5,358,703.
There is, however, still a need in the art for more rapid, preferably non-invasive methods for the detection of nitric oxide in body fluids.

Methods for the preparation of antibodies directed against dithiocarbamates and the use thereof for detection of nitric oxide in body fluids


A method is described herein that can be used to detect the presence of a load coil within a transmission line. The method can also be used to determine the number of load coil(s) present within the transmission line. In addition, the method can be used to determine the distance to the first load coil.

1. Field of the Invention
The present invention relates in general to the field of transmission line analysis.
2. Description of Related Art
The following abbreviations are herewith defined, at least some of which are referred to in the ensuing description of the prior art and the preferred embodiment of the present invention.    CO Central Office    CPM Copper Plant Management System    DSL Digital Subscriber Line    ETSI European Telecommunications Standards Institute    ETSIxx Cable Reference Model According to ETSI/STC TM6(97)02, Revision 3: 970p02r3, e.g., ETSI50 depicts 0.50 mm cable.    NB-SELT Narrow Band Single-Ended Line Test    POTS Plain Old Telephone Service    SELT Single-Ended Line Test
An operator of a telecommunication network has a great interest in measuring the properties of their transmission lines. Because, they can use the results of such measurements for e.g. detecting faults, locating faults, predicting certain faults which are about to occur, and estimating the suitability and capacity of a transmission line for certain services, such as DSL. The operator can use a variety of tests to measure the properties of a transmission line. For example, the operator can use a POTS test so they can maintain and diagnose a customer's narrowband (4 kHz) connection.
In addition, the operator can perform a single-ended line test (e.g., NB-SELT) in which properties of a transmission line can be estimated from measurements made at one end of the line. For instance, the single-ended line test enables the length of the transmission line to be measured by sending a pulse and measuring the time until a reflected pulse is received back. In addition, the single-ended line test enables the capacitance of the transmission line to be estimated by applying a voltage to the transmission line, then removing it and measuring the voltage decay time. Unfortunately, there is not a single-ended line test available today which can be used to detect the presence of a load coil in a transmission line. The ability to detect a load coil is desirable. Because, if there is a load coil present within the transmission line then that would disqualify the transmission line from supporting a DSL service. But, if the operator can detect a load coil then they could remove the load coil so the transmission line can now support a DSL service. This is made possible by the present invention.


A method for controlling flash memory includes selecting a new forward error correction (FEC) parameter set that provides more redundancy than a current FEC parameter set. The method also includes coding source information bits, using the new FEC parameter set, during write operations to a first corrupted page in the flash memory. The method further includes mapping the first corrupted page and at least one additional corrupted page in the flash memory to a single logical page with an expected page size.

Electronic devices (cellular telephones, wireless modems, computers, digital music players, Global Positioning System units, Personal Digital Assistants, gaming devices, etc.) have become a part of everyday life. Small computing devices are now placed in everything from automobiles to housing locks. The complexity of electronic devices has increased dramatically in the last few years. For example, many electronic devices have one or more processors that help control the device, as well as a number of digital circuits to support the processor and other parts of the device.
Electronic devices often store data in memory. The memory may be flash memory, in particular, NAND flash memory (i.e., flash memory that uses NAND logic). Therefore, benefits may be realized by improving the reliability and lifespan of flash memory.

Systems and methods to improve the reliability and lifespan of flash memory


This invention relates to a method for the stereoselective synthesis of a 2-aryloxycarboxylic acid using a chiral auxiliary to enhance the stereoselectivity of the alkylation of the .alpha.-halo acid with an aryloxy group.

During the development of a commercially viable asymmetric synthesis of a potent endothelin antagonist, a highly stereoselective synthesis of a key intermediate, a 2-aryloxycarboxylic acid needed to be developed. A variety of methods of general applicability have been worked out by Durst and Koh utilizing (R)-pantolactone as a chiral auxiliary. See Koh, K.; Durst, T. J. Org. Chem. 1994, 59, 4683.! Pantolactone esters of racemic .alpha.-halo acids have been coupled to a variety of phenoxides. Diastereoselectivities ranging from 76-90% have been obtained in this fashion with the "S" stereochemistry predominating at the newly formed asymmetric center. The "R" stereochemistry can be obtained utilizing (S)-ethyl lactate as the chiral auxiliary although diastereoselectivities are significantly lowered in comparison to pantolactone (60-75%). For other diastereoselective reactions utilizing pantolactone or ethyl lactate see: (a) Larsen, R. D.; Corley, E. G.; Davis, P.; Reider, P. J.; Grabowski, E. J. J. J. Am. Chem. Soc. 1989, 111, 7650. (b) Koh, K.; Ben, R. N.; Durst, T. Tetrahedron Lett. 1994, 35, 375. (c) Koh, K.; Ben, R. N.; Durst, T. Tetrahedron Lett. 1993, 34, 4473.! The reaction is also characterized by sluggish rates and moderate yields.
The instant invention relates to a highly stereoselective coupling reaction mediated with a pyrrolidine derived lactamide as a chiral auxiliary.

Chiral auxilary for stereoselective alkylations


A mini-stabilizer tool for connecting to a measurement while drilling (MWD) system. The mini-stabilizer tool centralizes components in the wellbore for a more accurate measurement to protect measurement while drilling components from wear on shoulders of the measurement while drilling components. The mini-stabilizer tool accomplishes wear prevention by positioning the measurement while drilling components away from edges of the wellbore.

A need exists for a small versatile tool for use in a wellbore to protect drilling and measurement while drilling components, centralize drilling and measurement while drilling equipment from particles dislodged while cutting a wellbore, while additionally smoothing a bore, as the drill string is pulled in and out of the wellbore.
The present embodiments meet these needs.
The present embodiments are detailed below with reference to the listed Figures.


A semiconductor package structure having a solder ball coupled to a chip pad and a manufacturing method thereof, a semiconductor package module, and a system. A circuit board includes a through hole therein, and a conductor is formed on a sidewall of the through hole. A first semiconductor chip including a first chip pad is mounted on the circuit board. A solder ball is disposed in the through hole and is bonded to the conductor and the first chip pad. Therefore, an underfill can be removed from a semiconductor package, and thus, the semiconductor package can be reduced in thickness.

1. Field of the Invention
The present general inventive concept relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a ball grid array (BGA) semiconductor package, a semiconductor package module, a system using a solder ball and a manufacturing method thereof.
2. Description of the Related Art
A packaging method of a flip chip package includes the following processes: A bump is formed on a semiconductor chip. In a wafer sawing process, a wafer is cut into unit semiconductor chips. In a flip chip attachment process, a surface of the unit semiconductor chips, where the bump is formed, is attached onto a circuit board used as a base plate of a semiconductor package such as a printed circuit board (PCB) or a tape wiring board. An insulating material is filled between the unit semiconductor chips and the circuit board in an underfill process, and a sealing resin covers a portion of the unit semiconductor chips and the circuit board in a molding process. Then, a solder ball is attached to a solder ball pad under the circuit board.

Semiconductor package, module, system having solder ball coupled to chip pad and manufacturing method thereof


A line plasma source (20) comprises a plasma chamber (30) configured so that plasma (32) is situated remotely and on-edge with respect to a polycrystalline silicon surface (20S) to be treated, thereby preventing damage to the surface, facilitating treatment of large substrates, and permitting low temperature operation. Active species exit the plasma chamber through a long narrow ("line") outlet aperture (36) in the plasma chamber to a reaction zone (W) whereat the active species react with a reaction gas on the polycrystalline silicon surface (e.g., to form a deposited thin film). The polycrystalline silicon surface is heated to a low temperature below 6000.degree. C. Hydrogen is removed from the reactive surface in the low temperature line plasma source by a chemical displacement reaction facilitated by choice of dominant active species (singlet delta state of molecular oxygen). Reaction by-products including hydrogen are removed by an exhaust system (100) comprising long narrow exhaust inlet apertures (114L,114R) extending adjacent and parallel to the outlet aperture of the plasma chamber. An ionizing electric field is coupled to the plasma across a smallest dimension of the plasma, resulting in uniform production of active species and accordingly uniform quality of the thin film. The polycrystalline silicon surface to be treated is translated with respect to the plasma line source in a direction perpendicular to the outlet aperture of the plasma line source for integrating thin film quality in the direction of translation (22).

1. Field of Invention
This invention pertains to apparatus and method for producing semiconductor devices such as integrated circuits (e.g., IC, LSI) and active matrix type liquid crystal display devices, and particularly to apparatus and method involving plasma-assisted deposition.
2. Related Art and Other Considerations
MIS (Metal Insulator Semiconductor) devices (e.g., transistors) for integrated circuits (e.g., IC, LSI) and for active matrix type liquid crystal display devices (hereinafter, referred to as an AMLCD) have a metal for which voltage can be controlled, with the metal producing an electric field in the oxide/insulator, which field extends into the semiconductor. By varying of the electric field, conductive properties of the semiconductor can be varied.
MIS devices (e.g., transistors) can be produced by layering and then processing thin films such as a gate insulating film and a gate electrode on a semiconductor substrate. In many prior art techniques, for a semiconductor device using a silicon substrate or a liquid crystal display device using a quartz substrate, silicon was oxidized at a temperature of about 1000.degree. C. in an oxidizing atmosphere to form a silicon dioxide (SiO.sub.2) film as the gate insulating film.
In recent years, devices such as AMLCD panels have been produced by forming a polycrystalline silicon film on a glass substrate, primarily using atmospheric vapor phase deposition methods and plasma vapor phase deposition methods. Unfortunately, each of these methods suffers certain disadvantages including those mentioned below.
The atmospheric vapor phase deposition methods cannot reach a sufficiently high temperature, with the result that an insulating film with low density is obtained. In view of such low density, it is subsequently necessary to subject the insulating film, after deposition, to thermal annealing at 600.degree. C. for a long period of time.
In the plasma vapor phase deposition methods, exposing the surface of a semiconductor substrate to plasma can damage or contaminate the surface, as hereinafter explained. In the plasma vapor phase deposition methods, semiconductor devices are prepared in a plasma reactor wherein active species from a plasma react with wafer surface materials.
Conventional plasma reactors utilized for semiconductor fabrication are often parallel plate reactors having round plates. In most parallel plate reactors, the plasma is situated about 2 to 5 cm above a top surface of the sample, and the plasma is substantially coextensive with the sample top surface. Accordingly, in conventional parallel plate reactors, gas is excited to be decomposed by a plasma electric potential and simultaneously the decomposed gas is reacted with the surface of the substrate.
Other prior art plasma reactors have an essentially cylindrical tube shape wherein the plasma is further distanced from the sample top surface. Such reactors are accordingly known as remote plasma reactors or afterglow plasma reactors.
A constant challenge in semiconductor fabrication in plasma reactors is uniformity of processing over the entire sample. In a silane-based process, for example, such uniformity generally requires uniform distribution of silane in the reactor. To obtain uniform processing, it is important to uniformly couple energy to the plasma.
For inclusion in commercial products, semiconductor devices should maintain quality performance over useful life. In the case of thin film transistors (TFTs), for example, it is desirable to maintain a constant voltage threshold and gain over the useful life of the TFT. However, the presence of hydrogen at an interface of the insulator and semiconductor can jeopardize long-run performance of a MIS device such as a TFT.
In the above regard, when bonds between silicon and hydrogen are broken near an interface, the hydrogen essentially drifts away and its formerly bonded silicon becomes a trap for electrons which are tunneling from the semiconductor into the interface, thereby increasing threshold voltage and changing the transconductance of the TFT.
While the presence of hydrogen at an interface has thus been recognized as a potentially deleterious factor, prior art semiconductor processes have fortuitously minimized the influence of hydrogen. In this respect, prior art semiconductor processes typically have high temperatures (over 600 degrees centigrade for TFT fabrication for LCDs) which cause hydrogen to spontaneously desorb from the surface.
There is impetus to improve MIS production technology, such as (for example) utilizing less expensive materials and providing the MIS devices on larger silicon wafers. Concerning materials, rather expensive quartz or special glasses are necessary to withstand the high temperatures. While it is desirable to use less expensive glass (e.g, more common grades) for MIS substrates, the processing temperature must be significantly lowered to accommodate such lower grades, with the trade-off that hydrogen at the interface must somehow be otherwise removed (since temperature is no longer automatically causing hydrogen desorption).
Low temperature plasma reactive operations have previously been employed for relatively successful (e.g., relatively defectless) deposition of insulators on single crystal silicons. Significantly, MIS devices, on the other hand, are polycrystalline surfaces.
In one recent pseudo-low temperature prior art process, less expensive glass is utilized in a process of forming polycrystalline silicon by laser pulsing amorphous silicon. In such process, the peak temperature is very high, but because of its pulsed nature, the total thermal (local) load is low. However, such laser-involved process has considerable manufacturing complexity.
Other methods for forming thin films on a semiconductor substrate have recently been proposed. One method using an ECR plasma resonates electrons using a cyclotron to increase the density of plasma even at low pressure. In this ECR plasma method, a plasma chamber and a reaction chamber are separated from each other, so that excited species are produced in the plasma chamber and the resulting plasma is drawn into the reaction chamber (i.e., the surface of a semiconductor substrate). Such a structure prevents the surface of the semiconductor substrate from being exposed to the plasma, so that the surface is not likely to be damaged and excited species with a high density can be produced. Unfortunately, the method using the ECR plasma requires the confinement of the plasma with a magnetic field, which causes problems in forming uniform thin films over a large area.
Another method has been proposed in IEEE, EDL, Vol. 15, No. 2, February 1994. In this method, the damage to the surface of a semiconductor substrate caused by plasma is alleviated by interposing two other electrodes between electrodes in a parallel plate type plasma vapor phase deposition apparatus. Yet, problematically, SiH.sub.4 and O.sub.2 used for forming thin films on the substrate are simultaneously decomposed, so that the composition of the thin films is difficult to control and hydrogen cannot be prevented from being mixed in the thin films. Furthermore, this method makes it difficult to form uniform thin films over a two-dimensional large area.
In the unrelated field of production of architectural glass, glass has been conveyed past a linear source in a reactive sputtering process. However, reactive sputtering is not a chemical vapor deposition process and the architectural glass production technique moreover requires a rotary magnetron head.

Line plasma vapor phase deposition apparatus and method


An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system (“laser”). The laser produces a train of temporally-shaped laser pulses each being of a programmable pulse duration, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has a plurality of plates. A control system having a digital sequencer controls the laser and a plurality of switching components, synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to enable programmable pulse durations and programmable inter-pulse spacings.

Small objects tend to evolve over short timescales. For example, in chemistry, biology, and materials science, a sequence of changes no more than a nanometer in size can pass by in a microsecond, leaving behind little evidence. Reconstructing these processes and determining how and why they took place can be a difficult task. Many techniques can record the static, before and after states of materials, some even at high spatial resolutions, but they often lack the temporal resolution to capture the nearly instantaneous changes occurring over time intervals shorter than 0.1 ms.
For example, conventional transmission electron microscopy/microscopes (TEM) is a well-established technique/instrument using electrons instead of light for investigating material properties and structure at size scales from micrometers to angstroms at the atomic level. TEMs operate on the same principles as a light microscope but substitute electrons for light to achieve much higher spatial resolution. Electron microscopes typically generate electrons through thermionic emission, in much the same way an incandescent bulb uses heat to produce light, or through field emission, which combines a metallic conductor and an electrostatic field. Electrons emitted by a source, usually at the top of the microscope, are typically focused by magnetic lenses into a narrow beam and directed through a thin specimen. Depending on the specimen's material properties, for example its density and crystalline structure, some of the electrons are scattered and used to form an image or diffraction pattern. Subsequent lenses in the TEM column magnify this image or pattern onto a fluorescent screen. The resulting light and dark regions provide information about the materials examined, including their crystalline grain structure, defects, or even single atomic rows and columns. A camera at the bottom of the microscope then records the data. Conventional TEMs produce a steady stream of electrons that pass through the optical column one at a time, and achieve the desired beam parameters using small apertures with lenses to discard all but a fraction of the current.
Despite the relatively high spatial resolutions (i.e. spatial resolutions higher than light microscopes) achievable by conventional TEM microscopes, their relatively low temporal resolutions (e.g. second- or millisecond-scale) are often inadequate to capture the fast dynamic processes in materials, e.g. microstructured or nanostructured materials, which occur at such small size scales. In particular, conventional TEM measurements are made at roughly standard video frame rates (e.g. ˜24 frames per second), which are governed by the electron source current and brightness and the capabilities of the image acquisition systems, and which are often thousands or even millions of times slower than the rate at which processes typically evolve in microstructured or nanostructured materials. Such material processes also are often unique, never unfolding exactly the same way twice, necessitating single-shot high-speed acquisition for their study. Examples include mechanical deformation and the interaction between phase transformations and microstructure. To capture dynamic behavior with a conventional TEM microscope, researchers must start and stop a process, which is not always feasible and rarely precise.
Dynamic transmission electron microscopy (DTEM) is another methodology similar to and modified from conventional TEM technology for investigating material properties and structure. A microscope making use of DTEM technology, however, can capture transient processes/events in materials with enhanced (e.g. nanosecond-scale) time resolution as a high quality image or diffraction pattern of the state of a material at some known time interval after an event has begun. In contrast to conventional TEM instruments, which produce a steady stream of electrons (such as produced by thermionic emission) that pass through the optical column one at a time, a DTEM instrument releases electrons in a single burst as an extremely brief (e.g. 1 ns to few μs timescales) bright electron pulse operating at high electron current, producing billions of electrons in a pulse. The high current is typically achieved through photoemission, driven by a pulsed laser (e.g. ultraviolet laser) directed upon a metal cathode, such as for example a tantalum disk. In particular, the laser is arranged to direct a pulse of light into the optical column of the TEM where it may be reflected by a mirror onto the cathode to release a burst of electrons. The electron pulse emitted from the electron source is then accelerated through a system of condenser lenses that focus and point the beam upon the investigated sample. It is notable that while conventional TEMs achieve the desired beam parameters using small apertures to discard all but a fraction of the current, the lens system of a DTEM microscope is typically designed with additional condenser lenses and an extra focusing (crossover) region, and also with a reduced number of apertures, to maximize electron throughput while focusing the beam down to a small spot on the sample to boost spatial resolution. Furthermore, the duration of the laser pulse determines the "exposure time" for recording the image or diffraction pattern.
In this manner, a DTEM microscope controls the electron emission such that it is correlated in time with the transient process being studied, which is typically triggered or initiated by a pulsed laser striking the material, though other methods are possible. As a result, a DTEM microscope produces a brighter, higher current beam than a conventional TEM with little sacrifice in beam coherence (which affects image contrast and diffraction-pattern sharpness). In addition, researchers can adjust the lens's focal length to control how much of the beam is used in an experiment. Because a DTEM microscope acquires sufficient information in a single experiment to generate a high-resolution image of a micro- to nanosecond-long, nanoscale event, irreversible events such as phase transformations, chemical reactions and crystal growth can be studied.
Unfortunately, standard DTEM microscopes are configured for single shot operation to only capture a single image or diffraction pattern per sample drive event/camera read-out time, which is typically on the scale of milliseconds to seconds. Thus many of the details of complex, unique processes may still be lost. Single-shot DTEM experiments are typically repeated on unprocessed specimens or regions of the specimen as often as required, each with a different time delay, and the collection of images are combined into an averaged view of the process over time. While an averaged view is sufficient for studying reactions that are nearly identical every time, and while a high time-resolution single image provides some research value, they lack the ability to scrutinize more complex or variable behavior and fast material processes ranging from phase transformations to chemical reactions and nanostructure growth.

High-speed multi-frame dynamic transmission electron microscope image acquisition system with arbitrary timing

Lawrence Livermore National Security, LLC


A manufacturing method for an electrode in which ultra fine particles of active material formed in gas by an evaporation method are carried in a gas flow and blown onto a surface of a substrate, so that an electrode comprising a thin film of active material is formed on the surface of the substrate. A manufacturing method for an electrode-electrolyte composite in which ultra fine particles of active material formed in gas by the evaporation method are carried in a gas flow and blown onto a surface of a film comprising a solid electrolyte, so that an electrode comprising a thin film of active material is formed on the surface of the film. The above manufacturing method for an electrode can provide an anode or a cathode comprising an ultra thin film having an uniform thickness of under 10 microns inclusive, for example. The above manufacturing method for an electrode-electrolyte composite can provide, with good productivity, an electrode-electrolyte composite in which an adhesion of the electrode with the electrolyte is excellent and the electrode is of an ultra thin type having an uniform thickness.

1. Industrial Useful Field
This invention relates to a manufacturing method for an electrode for use in a film type battery and a manufacturing method for an electrode-electrolyte composite.
2. Prior Art and its Problem
A conventional cathode for a film type battery has been manufactured as a sheet-shaped thin film by mixing conductor, binder and positive active material. In this method, however, a thickness of the thin film has been dependent on a particle size and a charging rate of the positive active material. It has been hard to obtain a sub-micron particle size and it has been difficult to increase the charging rate, so that it has been not easy to obtain a thin film having a thickness of under 10 microns inclusive.
Methods of utilizing lithium or lithium alloy for an anode have been proposed variously, however, it has been difficult to obtain a thin film of uniform thickness composed of lithium. In a method for manufacturing a thin film by extruding lithium from a nozzle for example, a lower limit of thickness of the thin film has been 0.03 mm, and the thickness has become not uniform under this thickness. Further, in a method for obtaining a thin film by rolling, a lower limit of thickness of the thin film has been 0.02 to 0.03 mm.
Carbon electrodes have been manufactured as a sheet-shaped thin film by mixing a carbon material and a binder. However, a thickness of the sheet has been dependent on a charging rate of carbon material, and it has been difficult to obtain a thin film electrode having a thickness of under 10 microns inclusive.
As described above, in the conventional method it has been difficult to obtain an anode or a cathode composed of an ultra thin film having an uniform thickness of under 10 microns inclusive, for example, with good productivity.
Methods for manufacturing the thin film electrode by means of a vacuum coating method, sputtering method etc. have been proposed. In these methods, however, a film forming rate is small so that the method is suitable for forming a film having a thickness of less than several hundred angstroms but not suitable for forming a film having a thickness of larger than that. On the other hand, in order to improve the film forming rate, a method wherein ultra fine particles of metal are directly carried in a gas flow to be deposited on a substrate at a high velocity has been proposed in Published Patent Application (KOKAI) No. 1-265450. However, this method has included such a disadvantage of an incontinuous and inefficient film forming process. Obtaining active materials of a multi-component system by this method has provided poor productivity because of the expense of fine-particles of various metals and the difficulty in mixing them uniformly. Moreover, it has been impossible to obtain active matrials of a multi-component system having an excellent property by this method.
In recent years, study and development of a secondary lithium battery are flourishing. Using metallic lithium for the anode in the secondary lithium battery will cause troubles from the standpoint of deterioration of performance and safety accompanied by dendrite formation at the time of charging. In order to overcome this problem, it has been proposed to use a carbon capable of occlusion and emission of lithium as the anode material. In a lithium battery utilizing a normal lithium intercalation active material as the cathode and a carbon electrode as the anode, it is necessary to previously dope the lithium in the carbon electrode. For this reason, the carbon electrode has required a troublesome process named as a doping process before assembling a package. In order to eliminate the previous doping process for the carbon electrode, it can be proposed that an active material having a structure reduced by lithium is synthesized to be used as the cathode active material. The manufacturing process can be simplified by this method. For example, LiMn.sub.2 O.sub.4 which is a spinel related lithium manganese oxide compound, is one which can be used as the cathode active material for a secondary lithium battery and can be synthesized easily. It is well known that a state of the cathode active material at the charging end will change up to Li.sub.2 Mn.sub.2 O.sub.4 when the battery is assembled by using the above material together with lithium related anode material and is discharged. Accordingly, if the spinel related manganese compound expressed by the chemical formula of Li.sub.2 Mn.sub.2 O.sub.4 can be synthesized, the secondary lithium battery can be composed by combining that compound and the carbon electrode which is not doped yet. In the present situation, however, it requires further various studies to chemically synthesize the lithium reductant called Li.sub.2 Mn.sub.2 O.sub.4, and a process named as previous discharging becomes necessary in order to synthesize the reductant electro-chemically. In order to eliminate the previous doping process for the carbon electrode, it can also be proposed to form a carbon electrode in which lithium has been doped previously.
On the other hand, it is desired to use a solid electrolyte, especially a solid polymer electrolyte, as an ionic conductive material for use in the film type battery. This is because the solid electrolyte has advantages of easiness in manufacturing, freeness from liquid leakage, and capability of manufacturing cells having voluntary shapes. When using the solid electrolyte, however, means for always maintaining a good adhesion state between the electrode and electrolyte, i.e. pressure welding of the two etc., will be required. With the film type battery, especially a battery provided with flexibility, it is difficult to apply a pressure from outside or inside as encountered in a prismatic battery or a spiral cylindrical battery, so that a serious trouble such as failure in adhesion between the electrode and electrolyte occurs.
In addition to the foregoing improvement in good adhesion between the electrode and electrolyte, the following points are required: [1] An effective contacting area between an electrode material and a packaging material which forms a current collector must be maintained in a good state. [2] In case of an organic electrolyte battery such as the lithium battery etc., it must be protected from influence of water content because a composite composed of the electrode and the electrolyte reacts with the water content to become an undesirable material for a battery.
Further, the following literatures are known as the prior art: [1] "Surface Technology" 8, 335, 1987, M. Oda, `Formation and Application of Ultra Fine particles by In-Gas Evaporation Method`, [2] "Applied Physics" 54, 687, 1985, C. Hayashi, `Gas Deposition of Ultra Fine Particles`, [3] "Japanese Journal of Applied Physics" 23, L910, 1984, S. Kashu, E. Fuchita, T. Manabe, C. Hayashi, `Deposition of Ultra Fine Particles Using a Gas Jet`.


In a microprocessor, a speculative acknowledge/rescue scheme is implemented in the bus controller to increase bus cycle performance for 1/2X clocking. For the odd cycles of the bus controller clock that result from 1/2X clocking, bus cycle requests from the cache controller, which ordinarily cannot be acknowledged in the same bus controller clock as received (even though the bus cycle can still be run the that clock), are speculatively acknowledged. If the bus controller cannot run the bus cycle in that clock, rescue is initiated in which the bus cycle request is resubmitted in the next clock. In an exemplary embodiment, snoop write back requests are prioritized such that a pending rescue bus cycle will be stalled until the snoop write back request is completed. The speculative acknowledge/rescue scheme is advantageous in minimizing any adverse impact on performance by minimizing the number of unacknowledged bus cycle requests during odd clock cycles created by 1/2X clocking.

1. Technical Field
The invention relates generally to computer systems, and more particularly relates to a processor that uses a core clock that is a 1/2X multiple of the system clock.
In an exemplary embodiment, the invention is used in an x86 processor to interface a processor core with a 233 or 300 MHz core clock to a bus controller operating at a 66 MHz system clock frequency.
2. Related Art
Current microprocessor designs typically use a core clock rate that is some multiple of the bus or system clock rate. For example, in a computer system with a 66 MHz system clock, a 4X core clock will enable the microprocessor to run at 266 MHz.
For microprocessors employing clock multiplication, the bus controller (bc) provides an interface between the microprocessor core and the external system. Clock generation circuitry receives the input bus/system clock, and generates both a bc clock at the bus clock frequency, and a multiplied core clock--the bc operates internally with the bc clock, and interfaces to the external bus at the bus clock frequency, and to the core at the core clock frequency.
Without limiting the scope of the invention, this background information is provided in the context of a specific problem to which the invention has application: in a microprocessor, interfacing the bus controller to the execution core when the core is using a core clock that is a 1/2X multiple of the bc clock.
Clock generators able to provide a core clock that is an integer multiple of an input bus/system clock are straightforward in that the rising edge of the bus clock is synchronized with the rising edge of multiplied core clock.
Even in the case of two phase designs, all clock edges are synchronized. Two phase microprocessor designs use separate ph1 and ph2 core clocks that are 180 degrees out of phase--the separate ph1/ph2 clocks are used to clock different sets of ph1 and ph2 latches in the core logic. Some microprocessors use a two phase design for the bus controller also, so that the bc uses bph1 and bph2 clocks at the bus clock frequency (which clock bph1 and bph2 latches in the bc logic).
Incorporating clock generation support for 1/2X clocking is advantageous in providing flexibility to the computer system designer. For example, in the case of a 66 MHz bus/system clock, the computer system designer could offer both a 4X clocked 266 MHz system and/or a 4.5X clocked 300 MHz system.
One-half X clocking is problematic in that not all of the clock edges of the bus and multiplied core clocks are in sync. Thus, in the case of a two phase microprocessor design, for even clock cycles of the bc clocks, the rising edges of the core clocks ph1/ph2 are in phase with the rising edges of the corresponding bc clocks bph1/bph2, but for odd clock cycles of bph, the rising edges of the bc clocks occur on corresponding falling edges of the core clocks (i.e., the core and bus clocks are out of phase by approximately 1/2 of a core clock period).
This lack of synchronization between core and bus clocks is illustrated in FIG. 2 (bph1 and ph1)--it can have a significant impact on interface timing (hand shaking) between the core and bc logic. For example, data accesses by the execution core are typically presented to an L1 (level 1) cache--if the cache accesses misses, the cache controller requests that the bus controller run an external bus cycle to retrieve the data.
In the case of out-of-phase (odd) bc clock cycles, a 1/2 clock difference can have significant ramifications. For example, when the bc receives a bus cycle request from the cache controller, it will typically run the bus cycle in the same clock as the request is received, and at the same time acknowledge to the cache controller that it has received the request and run the bus cycle--the cache controller is then able to issue another bus cycle request to the bc in the next clock without having to re-run (or re-prioritize) an unacknowledged request.
Thus, if the bc delays acknowledging the first request for 1/2 clock, performance will be adversely impacted because the cache controller will have to re-run (possibly with reprioritization) the unacknowledged request (thus introducing additional delays in supplying requested data to the execution core). If the cache controller is allowed to issue a second request without waiting for the first request to be acknowledged, then additional logic would have to be included in the cache controller to determine whether the next acknowledgement is for the first or second bus cycle request.

Speculative bus cycle acknowledge for 1/2X core/bus clocking


Methods and apparatus are provided for measuring a position of a mobile terminal. A first position is calculated by using a GPS signal. A visible light communication mode of the mobile terminal is activated, when the first position exceeds a predetermined error range. Visible light communication device position information is received. A third position is calculated by using a second position, which corresponds to a position prior to the first position, and the visible light communication device position information.

1. Field of the Invention
The present invention relates generally to an apparatus and a method for measuring a position, and more particularly, to an apparatus and a method for measuring a position by using a Global Positioning System (GPS) and visible light communication.
2. Description of the Related Art
Position measurement technology is used by an application system and provides a service of accurately detecting a position of a person or an object, which is a target of attention, and using the detected position. Position measurement technology has been developed and used in various ways depending on an applied method or range, and may include, for example, a GPS, an Assisted GPS (A-GPS), and the like.
IGPS corresponds to a currently operated global satellite navigation system. A GPS receiver receives microwaves transmitted from twenty-four or more satellites rotating at a medium earth orbit, thereby allowing a position vector of the receiver to be determined. Specifically, the GPS receiver receives signals transmitted from three or more GPS satellites, and positions of the satellites and the receiver are determined. A distance between the satellite and the receiver may be calculated by measuring a time difference between the signal transmitted from the satellite and the signal received by the receiver. The transmitted signal contains information on the position of the satellite. When distances from a minimum of three satellites and a position of each satellite are provided, the position of the receiver may be calculated using a method such as trilateration. In general, GPS determines a position by using four or more satellite signals in order to correct an error.
A-GPS corresponds to a technology of measuring a position by receiving position measurement auxiliary information from a mobile communication network or wireless Internet (e.g., Wireless-Fidelity (Wi-Fi)), as well as a GPS signal. A-GPS includes an assistance server containing information on a GPS satellite capable of regionally communicating from a closest distance. The assistance server records satellite information, and calculates and corrects a position corresponding to functions required by a position measurement apparatus, such as, for example, a GPS terminal or the like, instead of the position measurement apparatus. When the GPS terminal has difficulty receiving the GPS signal, A-GPS enables position measurement by receiving satellite information from the assistance server through a mobile communication network or a wireless Internet network. By using A-GPS, it is possible to measure a position in a shadow area by receiving satellite information, and to reduce an "initial position information reception time" (Time To First Fix (TTFF): a time taken while a current position of the terminal is detected), so that position information may be rapidly calculated. Accordingly, A-GPS is widely used together with GPS.
However, position measurement technology using GPS has difficulties measuring a position in a shadow area, such as, for example, an urban area having many tall buildings that block a satellite signal. Further, since a GPS receiver requires a large amount of power to receive a GPS satellite signal in the shadow area, a portable device or the like, having limited power may reduce its effective time due to excessive power consumption. Accordingly, although A-GPS technology is used to measure a position in the shadow area using GPS, the A-GPS also receives satellite information through a mobile communication network or a wireless Internet network. Thus, the position measurement apparatus requires a separate communication module, such as a mobile communication module for mobile communication or a Wi-Fi module for wireless Internet communication.
Visible light communication uses light within a visible light wavelength area. The visible light communication, which mainly uses a Light Emitting Diode (LED) as a light source for communication, has received increasing interest due to depletion of the Radio Frequency (RF) band, crosstalk possibility between various wireless communication technologies, increases in a demand for communication security, and the like.
Visible light communication is performed when a visible light transmitter transmits a visible light by using an LED or a Laser Diode (LD) as a light source, and a visible light receiver receives the visible light by using a Photo Detector (PD) and processes a received visible light signal. The LED can flicker at a high speed. When the LED flickers at a high speed, a human's eye cannot recognize the flickering. The visible light communication may use the LED as a light source of an additional communication device while using the LED for its inherent function. Further, as LED emission efficiency has been improved and a cost thereof has been reduced, the LED is becoming more common in a general illumination market which includes a fluorescent light, an incandescent light and the like, as well as a special illumination market for a portable device, a display, an automobile, a traffic light, a signboard and the like. Accordingly, the possibility of application of visible light communication is increasing in various fields where the LED illumination is installed.

Apparatus and method for measuring position using GPS and visible light communication