The invention is a dielectric resonator circuit comprising a housing; first, second, and third resonators positioned substantially in a row within the housing with said second resonator positioned between the first and third resonators, wherein the resonators are positioned relative to each other such that a field generated in each resonator couples to an adjacent resonator; wherein the housing encloses the resonators and has a separating wall positioned between the first and third resonators in order to control electromagnetic coupling between the first and third resonators; and wherein said first separating wall comprises a first end and a second end along a length thereof and wherein the separating wall defines an iris at the first end, the wall comprising a main wall portion positioned substantially between the first and third resonators and an extension wall portion at the first end that extends at an angle from the main wall portion of said wall.

1. Field of the Invention
The invention pertains to dielectric resonator circuits. More particularly, the invention pertains to dielectric resonator circuits comprising housings adapted to prevent cross coupling between non-adjacent resonators.
2. Background
Dielectric resonators are used in many circuits, particularly microwave circuits, for concentrating electric fields. They can be used to form filters, oscillators, triplexers, and other circuits. The higher the dielectric constant of the material out of which the resonator is formed, the smaller the space within which the electric fields are concentrated. Suitable dielectric materials for fabricating dielectric resonators are available today with dielectric constants ranging from approximately 10 to approximately 150 (relative to air). These dielectric materials generally have a magnetic constant of 1, i.e., they are transparent to magnetic fields.
Generally, as the dielectric constant of the material of the resonators increases, higher center frequencies of the given circuit can be achieved.
FIG. 1 is a perspective view of a typical dielectric resonator of the prior art. As can be seen, the resonator 10 is formed as a cylinder 12 of dielectric material with a circular, longitudinal through hole 14. Individual resonators are commonly called "pucks" in the relevant trades. While dielectric resonators have many uses, their primary use is in connection with microwaves and, particularly, in microwave communication systems and networks.
As is well known in the art, dielectric resonators and resonator filters have multiple modes of electrical fields and magnetic fields concentrated at different center frequencies. A mode is a field configuration corresponding to a resonant frequency of the system as determined by Maxwell's equations. In a dielectric resonator, the fundamental resonant mode frequency, i.e., the lowest frequency, is the transverse electric field mode, TE01δ (or TE, hereafter). The second mode is commonly termed the hybrid mode, H11δ (or H11, hereafter). The H11 mode is excited from the dielectric resonator, but a considerable amount of electric field lays outside the resonator and, therefore, is strongly affected by the cavity. The H11 mode is the result of an interaction of the dielectric resonator and the cavity within which it is positioned. The H11 mode field is orthogonal to the TE mode field. There also are additional higher modes.
Typically, it is the fundamental TE mode that is the desired mode of the circuit or system into which the resonator is incorporated. However, other modes, and particularly the H11 mode, often are used in the proper circumstances, such as dual mode filters. Typically, all of the modes other than the mode of interest, e.g., the TE mode, are undesired and constitute interference.
FIG. 2 is a perspective view of a dielectric resonator filter 20 of the prior art employing a plurality of dielectric resonators 10a, 10b, 10c, 10d. The resonators 10a, 10b, 10c, 10d are arranged in the cavity 22 of a conductive enclosure 24. The conductive enclosure 24 typically is rectangular, as shown in FIG. 2. Microwave energy is introduced into the cavity via an input coupler 28 coupled to a cable, such as a coaxial cable. The energy may then be coupled to a first resonator (such as resonator 10a) using a coupling loop.
The high dielectric constant of the material out of which the resonators are formed concentrates the electrical fields within the resonators. However, most dielectric resonators have a magnetic constant of 1, i.e., they are transparent to the magnetic fields. Accordingly, the magnetic fields exist mostly outside of the resonator bodies. The electromagnetic coupling between the resonators that occurs in multi resonator circuits such as illustrated in FIG. 2 is magnetic field coupling. As is well known, the magnetic fields are orthogonal to their associated electrical fields.
Conductive separating walls 32 separate the resonators from each other and block (partially or wholly) magnetic field coupling between physically adjacent resonators 10a, 10b, 10c, 10d. Particularly, irises 30a, 30b, 30c in walls 32a, 32b, 32c, 32d control the coupling between adjacent resonators 10a, 10b, 10c, 10d. Conductive walls without irises generally prevent any coupling between the resonators separated by the walls, while walls with irises allow some coupling between these resonators. Specifically, conductive material within the electric field of a resonator essentially absorbs the ohmic component of the field coincident with the material and turns it into a current in the conductive material. In other words, conductive materials within the electric fields cause losses in the circuit.
Conductive adjusting screws (not shown) in conductive contact with the enclosure may be placed in the irises to further affect the coupling of the fields between adjacent resonators and provide adjustability of the coupling between the resonators, but are not used in the example of FIG. 2. When positioned within an iris, a conductive screw partially blocks the coupling between adjacent resonators permitted by the iris between them. Inserting more of the conductive screw into the iris reduces electric coupling between the resonators while withdrawing the conductive screw from the iris increases electric coupling between the resonators.
By way of example, the field of resonator 10a couples to the field of resonator 10b through iris 30a, the field of resonator 10b further couples to the field of resonator 10c through iris 30b, and the field of resonator 10c further couples to the field of resonator 10d through iris 30c.
Wall 32a, which does not have an iris or a cross-coupler, entirely prevents the field of resonator 10a from coupling with the physically adjacent resonator 10d on the other side of the wall 32a. Furthermore, resonator 10a does not appreciably couple with resonator 10c and resonator 10b does not appreciably couple with resonator l0d because of 1) the various blocking walls 32a, 32b, 32c, 32d and 2) the significant distance between the resonators that the field lines would have to traverse in order to get around those walls to couple with each other.
One or more metal plates 42 may be positioned adjacent each resonator to affect the field of the resonator to set the center frequency of the filter. Particularly, plate 42 may be mounted on a screw 44 passing through a top surface (not shown) of the enclosure 24. The screw 44 may be rotated to vary the spacing between the plate 42 and the resonator 10a, 10b, 10c, or 10d to adjust the center frequency of the resonator. A coupling loop connected to an output coupler 40 is positioned adjacent the last resonator 10d to couple the microwave energy out of the filter 20. Signals also may be coupled into and out of a dielectric resonator circuit by other methods, such as microstrips positioned on the bottom surface 44 of the enclosure 24 adjacent the resonators.
The sizes of the resonators 10a, 10b, 10c, 10d, their relative spacing, the number of resonators, the size of the cavity 22, the size of the irises 30a, 30b, 30c, and the size and position of the metal plates 42 all need to be precisely controlled to set the desired center frequency of the filter, the bandwidth of the filter, and the rejection in the stop band of the filter. More specifically, the bandwidth of the filter is controlled primarily by the amount of coupling of the electric and magnetic fields between the resonators. Generally, the closer the resonators are to each other, the more coupling between them and the wider the bandwidth of the filter. On the other hand, the center frequency of the filter is controlled in large part by the size of the resonator and the size and the spacing of the metal plates 42 from the corresponding resonators 10a, 10b, 10c, or 10d.
Thus, while the presence of separating walls such as walls 32a, 32b, 32c, 32d may be desirable in order to control the coupling between the adjacent resonators to the desired level, they generally lower the quality factor Q of the circuit. Q essentially is an efficiency rating of the system and, more particularly, is the ratio of stored energy to lost energy in the system. Parts of the fields generated by the resonators pass through all of the conductive components of the system, such as the enclosure, separating walls tuning plates, and adjusting screws and inherently generate currents in those conductive elements. Those currents essentially comprise energy that is lost to the system.
Occasionally, controlled cross coupling between non-adjacent resonators is desirable and can be provided by the incorporation of cross coupling mechanisms. For instance, U.S. Pat. No. 7,057,480 issued Jun. 6, 2006, which is incorporated fully herein by reference, discloses various mechanisms for cross-coupling a non-adjacent resonators in a resonator circuit.
However, in the majority of dielectric resonators filters and other circuits, cross coupling between non-electrically adjacent resonators is not desired.
Therefore, it is an object of the present invention to provide an improved dielectric resonator circuit.
It is a further object of the present invention to provide a dielectric resonator circuit having improved coupling isolation between non-adjacent resonators.


A communications cable is provided that includes a cable jacket, twisted pairs of insulated conductors, and a spacer separating the twisted pairs of insulated conductors. The spacer extends within the cable jacket and has a longitudinally extending center portion and a plurality of wall portions radiating from the center portion thereby defining a plurality of compartments within the cable jacket. The twisted pairs of insulated conductors are disposed in the compartments thereby reducing cross talk in the communications cable.

Insulated conductors such as those used in communications cable are often provided as twisted pairs consisting of two insulated conductors twisted about each other to form a two conductor group. The typical assembly for these communications cables comprises two or more twisted pairs of insulated conductors bundled together and contained in a jacket. This assembly facilitates the installation of the cable. In addition, the jacket can be easily connected to other cable components by stripping the jacket and making the proper connections to the insulated conductors.
One problem associated with the conventional twisted pair assembly is that cross talk can occur between twisted pairs of insulated conductors thus negatively affecting the signals transmitted by these conductors. Cross talk especially presents a problem in high frequency applications because cross talk increases logarithmically as the frequency of the transmission increases. Because cross talk is affected to some degree by the distance between adjacent twisted pairs, one method of minimizing its occurrences is to space the twisted pairs apart using spacing means such as disclosed in U.S. Pat. No. 5,132,488 to Tessier et al. However, although such a construction can physically separate adjacent twisted pairs, there is still some degree of cross talk interaction between twisted pairs in this type of construction. In addition, there remains a need to provide easy connectorization between the twisted pair cable and other cable components.


Disclosed is a method for manufacturing a CMOS image sensor, capable of preventing dopants implanted with high energy from penetrating into a lower part of a gate electrode when a photodiode is formed, thereby preventing current leakage of a transistor and variation of a threshold voltage. The method includes the steps of forming a gate electrode on a transistor area of a first conductive type semiconductor substrate including a photodiode area and the transistor area, forming a salicide layer on the gate electrode, and implanting second conductive type dopants for forming a photodiode in a photodiode area of the semiconductor substrate.

1. Field of the Invention
The present invention relates to a method for manufacturing a CMOS image sensor. More specifically, the present invention relates to a method for manufacturing a CMOS image sensor, capable of preventing dopants implanted with high energy from penetrating into a lower part of a gate electrode when a photodiode is formed, thereby preventing current leakage of a transistor and variation of a threshold voltage.
2. Description of the Related Art
In general, an image sensor is a semiconductor device for converting optical images into electric signals, and is classified into a charge coupled device (CCD) and a CMOS image sensor.
The CCD has a plurality of photodiodes (PDs), which are arranged in the form of a matrix in order to convert optical signals into electric signals. The CCD includes a plurality of vertical charge coupled devices (VCCDs) provided between photodiodes vertically arranged in the matrix so as to transmit electrical charges in the vertical direction when the electrical charges are generated from each photodiode, a plurality of horizontal charge coupled devices (HCCDs) for transmitting the electrical charges that have been transmitted from the VCCDs in the horizontal direction, and a sense amplifier for outputting electric signals by sensing the electrical charges being transmitted in the horizontal direction.
However, such a CCD has various disadvantages, such as a complicated drive mode, high power consumption, and so forth. Also, the CDD requires multi-step photo processes, so the manufacturing process for the CCD is complicated. In addition, since it is difficult to integrate a controller, a signal processor, and an analog/digital converter (A/D converter) onto a single chip of the CCD, the CCD is not suitable for compact-size products.
Recently, the CMOS image sensor is spotlighted as a next-generation image sensor capable of solving the problem of the CCD. The CMOS image sensor is a device employing a switching mode to sequentially detect an output of each unit pixel by means of MOS transistors, in which the MOS transistors are formed on a semiconductor substrate corresponding to the unit pixels through a CMOS technology using peripheral devices, such as a controller and a signal processor. That is, the CMOS sensor includes a photodiode and a MOS transistor in each unit pixel, and sequentially detects the electric signals of each unit pixel in a switching mode to realize images.
Since the CMOS image sensor makes use of the CMOS technology, the CMOS image sensor has advantages such as the low power consumption and simple manufacturing process with a relatively smaller number of photo processing steps. In addition, the CMOS image sensor allows the product to have a compact size, because the controller, the signal processor, and the A/D converter can be integrated onto a single chip of the CMOS image sensor. Therefore, CMOS image sensors have been extensively used in various applications, such as digital still cameras, digital video cameras, and so forth.
Hereinafter, a method for manufacturing a conventional CMOS image sensor will be described.
FIGS. 1A to 1C are sectional views showing the conventional CMOS image sensor.
As shown in FIG. 1A, a low-density P type (P-) epitaxial layer 110 is formed on a P type semiconductor substrate 100. Then, an exposure and development process is performed with respect to the resultant structure by using a mask defining an active area and an isolation area, and the epitaxial layer 110 formed in the isolation area is etched to a predetermined depth, thereby forming a trench. An O3 TEOS film is formed on the semiconductor substrate 100 such that the O3 TEOS film is filled in the trench, and then is patterned through a chemical mechanical polishing (CMP) process such that the O3 TEOS film remains only in the trench, thereby forming an isolation layer 120 in the isolation area.
Then, an insulating layer and a conductive layer are sequentially formed on the entire surface of the semiconductor substrate 100, and then selectively removed, thereby forming a gate electrode 140 and a gate insulating layer 130.
Subsequently, a photoresist pattern (not shown) is formed such that only a portion of the epitaxial layer 110 corresponding to a source/drain area is exposed, and low-density N type dopants are implanted into the resultant structure, thereby forming a low-density N type impurity area for lightly doped drain (LDD).
As shown in FIG. 1B, a photoresist film (not shown) is deposited on the entire surface of the semiconductor substrate, and then an exposure and development process is performed with respect to the resultant structure, thereby forming a photoresist pattern such that a photodiode area is exposed. At this time, the photoresist pattern allows a portion of the gate electrode 140 to be exposed. Then, N type dopants are implanted into the epitaxial layer 110 formed in the photodiode area through a high-energy ion implantation process, and a diffusion process is performed, thereby forming an N type impurity diffusion area 160. Thereafter, the photoresist pattern is removed.
As shown in FIG. 1C, an insulating layer is deposited on the entire surface of the semiconductor substrate, and an etch back process is performed with respect to the resultant structure, thereby forming spacers 170 at both sides of the gate electrode 140. Subsequently, a photoresist pattern (not shown) is formed such that the spacer formed in a source/drain area or in the vicinity of the source/drain area can be exposed, and then high-density N type dopants are implanted into an upper part of the source/drain area, thereby forming a high-density N type impurity area 180. In addition, a photoresist pattern (not shown) is formed such that the spacer formed in the photodiode area or in the vicinity of the photodiode area can be exposed, and then P type dopants are implanted into an upper part of the N type impurity diffusion area 160, thereby forming a photodiode P type impurity diffusion area 190.
However, during the high-energy N type dopant implantation process for forming a photodiode, N type dopants may be doped to a channel area at a lower part of the gate insulating layer 130 through the gate electrode 140 due to high-energy ion implantation.
In other words, since the N type dopants are doped to the extent of the channel area formed below the gate electrode 140, a threshold value Vth of a transistor is reduced to a level equal to or less than a target value, so an off leakage current may increase.

Method for manufacturing CMOS image sensor


A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the sidewall insulation film, the heater electrode and a phase change film are contacted with each other. A phase change region is formed only in an area contacted with the sidewall insulation film. The sidewall insulation film is an anti-oxidizing insulation film. The phase change region and the heater electrode which are heated to a high temperature upon rewriting are not contacted with the interlayer insulation film as an oxidizing insulation film.

This invention relates to a semiconductor device and a method of producing the same and, in particular, to a semiconductor device having a nonvolatile memory using a phase change material and a method of producing the same.
A semiconductor memory for use in a semiconductor device is categorized into a volatile memory which loses memory information when power supply is turned off and a nonvolatile memory which retains memory information even when power supply is turned off. For example, the volatile memory is a DRAM (Dynamic Random Access Memory) or a SRAM (Static Random Access Memory) while the nonvolatile memory is an EEPROM (Electrically Erasable Programmable Read Only Memory) or a flash memory. In a recent mobile data terminal, for the purpose of miniaturization and power saving, use is often made of the flash memory which retains memory information even when power supply is turned off.
Recently, however, in order to achieve further miniaturization and power saving, attention is focused upon a phase change memory using a phase change material. The phase change memory is a nonvolatile memory in which two different crystal states, i.e., an amorphous state and a crystalline state, of the phase change material are used as memory information. Specifically, the phase change material is switched between the amorphous state having a high resistance value and the crystalline state having a low resistance value to represent memory information of "1" or "0". As the above-mentioned phase change material, a chalcogenide material is used.
In the phase change memory, a rewriting operation is carried out in the following manner. The phase change material is supplied with a sufficient amount of Joule heat to be melted. Thereafter, the phase change material is rapidly cooled to be turned into an amorphous state having a high resistance. Alternatively, the phase change material is supplied with a smaller amount of Joule heat and then slowly cooled to be turned into a crystalline state having a low resistance. The amount of heat to be supplied and a cooling rate are controlled by an electric current value and a length (application time) of a pulse applied to the phase change material. Thus, the rewriting operation as the memory is carried out by switching the phase change material between the different crystal states to change a resistance value. A reading operation of the phase change memory is carried out by utilizing the fact that the value of a flowing electric current is different depending on the amorphous state or the crystalline state of the phase change material.
FIG. 1 shows a memory element structure of a related phase change memory. After a lower electrode 8 is formed, an interlayer insulation film 5 is deposited. Then, a contact hole is formed in the interlayer insulation film 5 and a heater electrode 1 is formed in the contact hole. On upper surfaces of the heater electrode 1 and the interlayer insulation film 5, a phase change film 2 and an upper electrode 3 are successively formed. The interlayer insulation film 5, for example, comprising an oxide film (SiO2) surrounds a side surface of the heater electrode 1 and forms a lower layer of the phase change film 2.
When an electric voltage is applied between the upper electrode 3 and the lower electrode 8, Joule heat is produced to switch a crystal state of the phase change film 2 above the heater electrode 1. By switching the crystal state of the phase change film 2, an electric resistance of the phase change film 2 is changed. An area of the phase change film 2 where the crystal state is switched is represented as a phase change region 4. In order to switch the crystal state of the phase change film 2, a temperature not lower than about 600° C. is required. However, by a limited amount of electric current, only a limited area of the phase change film 2 can be heated to a high temperature not lower than 600° C. Therefore, as illustrated in the figure, the phase change region 4 of the phase change film 2 is an area around a contact surface between the heater electrode 1 and the phase change film 2. However, because the interlayer insulation film 5 includes oxygen, the phase change film 2 in the phase change region 4 and the heater electrode 1 are oxidized at such a high temperature not lower than 600° C. so that the phase change memory is varied and degraded in rewriting characteristics.
The phase change memory is described in the following patent documents. Japanese Unexamined Patent Application Publication (JP-A) No. 2005-340837 (Patent Document 1) discloses a semiconductor device comprising a molding film having a protruding portion, a phase change film and an upper electrode formed on the protruding portion of the molding film, and a lower electrode connected to the phase change film. The phase change film and the upper electrode are covered with oxygen barrier films on upper and lateral sides thereof. The molding film comprises an insulation film having a high thermal conductivity and serving as an oxygen barrier, for example, a silicon oxynitride film or a silicon nitride film. Thus, the phase change film is covered with the oxygen barrier films so as to avoid penetration of oxygen and oxidization of the phase change film.
Japanese Unexamined Patent Application Publication (JP-A) No. 2006-19688 (Patent Document 2) discloses a phase change memory comprising a lower electrode, an oxide film formed on the lower electrode and provided with a contact hole, and a spacer, a phase change film, and an oxide film which are formed in the contact hole. With the above-mentioned structure, a contact area between the lower electrode and the phase change film is reduced so that the amount of a rewriting current is reduced. International Patent Publication WO 2003/85740 A1 (Patent Document 3) discloses a non-volatile memory comprising an organic dielectric film provided with a hole penetrating therethrough. On one side of the organic dielectric film, an inorganic dielectric film, a recording layer, and an upper electrode are formed. In the hole, a heater electrode is formed. On the other side of the organic dielectric film, a lower electrode is formed. A part of the organic dielectric film which would be heated to a high temperature in the vicinity of the recording layer is covered with the inorganic dielectric film so that the organic dielectric film is prevented from being deteriorated due to exposure to a high temperature.
As described above, upon rewriting the phase change memory, it is necessary to supply the heater electrode with an electric current to produce heat so that the phase change region is heated to a temperature not lower than 600° C. If the insulation film around the heater electrode or the phase change film is an oxidizing insulation film, for example, if the interlayer insulation film 5 is a silicon oxide film (SiO2), a heater electrode material or the phase change film is oxidized. If the heater electrode material is tungsten (W) or titanium nitride (TiN), the heater electrode material is oxidized into WOx or TiON. Consequently, a resistance value of the heater electrode is changed to cause variation or degradation of the rewriting characteristics of the phase change memory. In the following description, a film allowing permeation of oxygen, such as a silicon oxide film, or a film causing diffusion supply of oxygen is called an oxidizing insulation film. On the contrary, a film inhibiting permeation of oxygen or a film causing no diffusion supply of oxygen is called an anti-oxidizing insulation film.
In order to avoid the above-mentioned problem, Patent Document 1 discloses to cover the heater electrode or the phase change film with the anti-oxidizing insulation film. However, in Patent Document 1, the molding film as the interlayer insulation film is formed by a silicon oxynitride film or a silicon nitride film. Thereafter, on the side surface of the phase change film, a side wall comprising a silicon nitride film is formed. Further, these films are entirely covered with a silicon nitride film, a stress relaxation film, and a silicon nitride film. Thus, the heater electrode and the phase change film are entirely surrounded by the silicon nitride film so as to prevent the heater electrode and the phase change film from being oxidized.
However, when the heater electrode and the phase change film are entirely covered with the silicon nitride film, new problems will arise. For example, if the silicon nitride film is thick, a crack is caused in the insulation film due to a film stress. In order to relax the stress, the stress relaxation film is required. This results in an increase in number of steps. Further, since the silicon nitride film has a relative dielectric constant higher than that of the silicon oxide film, a wiring capacitance or line-to-line capacitance is increased. This results in degradation in circuit characteristics such as an increase in power consumption or decrease in operation frequency.

Semiconductor device and method of producing the same


Various embodiments of the present invention are generally directed to attenuating excitation energy of a rotatable storage medium using one or more plates each having a plurality of parallel channels to buffer fluid flow across an associated medium surface. A preferred embodiment includes a plurality of channels in facing relation to a common surface of a rotatable storage medium. Further included in a preferred embodiment, the plurality of channels are sequentially arranged into a first, second, and third channels with differing sidewall characterizations. In an alternative embodiment, a plurality of storage mediums which are axially aligned have a plurality of channels in facing relation to either a top or bottom surface of a rotatable storage medium.

Modern data storage devices such as disc drives are commonly used in a multitude of computer environments to store large amounts of data in a form that is readily available to a user. Generally, a disc drive has a magnetic disc, or two or more stacked magnetic discs, that are rotated by a motor at high speeds. Each disc has a data storage surface divided into data tracks where data is stored in the form of magnetic flux transitions.
A data transfer member such as a magnetic transducer is moved by an actuator to selected positions adjacent the data storage surface to sense the magnetic flux transitions in reading data from the disc, and to transmit electrical signals to induce the magnetic flux transitions in writing data to the disc. The active elements of the data transfer member are supported by suspension structures extending from the actuator. The active elements are maintained a small distance from the data storage surface by a fluid bearing generated by fluid currents caused by the spinning discs. The term "fluid bearing" is synonymous with the term "air bearing" where the fluid utilized in the disc drive is air. Alternatively, the term "fluid bearing" is applicable to other embodiments utilizing a fluid other than air, such as helium.
A continuing trend in the data storage industry is toward ever-increasing the data storage capacity and the processing speed while maintaining or reducing the physical size of the disc drive. Consequently, the data transfer member and the supporting structures are continually being miniaturized, and data storage densities are continually being increased. One result is an overall increased sensitivity to vibration as a percentage of track width.
One source of vibration comes from the fluid currents, or windage, that is created by the spinning discs. Fluid flow perturbations, and especially turbulent fluid flow, can excite the actuator and/or the disc creating vibrations. During servo track writing operations, for example, such vibrations can create actuator positional control errors resulting in irregular servo track formatting such as but not limited to track squeeze.
While various proposed solutions have been found operable, there remains a continued need for improvements in windage management for attenuating excitation energy. It is to such improvements that the claimed invention is generally directed.

Pressure equalizing fluid flow stripper apparatus


A semiconductor die is inspected using an optical microscope to generate a test image of the semiconductor die. A difference image between the test image of the semiconductor die and a reference image is derived. For each defect of a plurality of defects for the semiconductor die, a point-spread function is fit to the defect as indicated in the difference image and one or more dimensions of the fitted point-spread function are determined. Potential defects of interest in the plurality of defects are distinguished from nuisance defects, based at least in part on the one or more dimensions of the fitted point-spread function for respective defects of the plurality of defects.

Modern optical semiconductor-inspection tools use wavelengths that are significantly longer than the dimensions of a typical defect, often by an order of magnitude or more. As such, inspection tools cannot resolve the defects and thus cannot provide images showing the defects; instead, the inspection tools merely provide an indication that a defect has been detected. Furthermore, many of the detected defects are so-called nuisance defects that do not impact device functionality and are not of interest to process-integration and yield-improvement engineers. In addition, nuisance defects may outnumber defects of interest, for example by a factor of 1000 or more. The high volume of nuisance defects makes it impractical to perform subsequent failure analysis (e.g., visualization using a scanning electron microscope) on all identified defects. The high volume of nuisance defects also makes it impossible to determine whether a wafer should be scrapped or reworked due to a high number of defects of interest.

Defect classification by fitting optical signals to a point-spread function


A sheet peeling apparatus 10 includes: a supporting means 11 for supporting a semiconductor wafer W stuck with an adhesive sheet S; a tape sticking means 14 for sticking a peeling tape T to the adhesive sheet S; a pulling means 13 for pulling the peeling tape T; a peeling assisting means 15 including an endless member 45 which is positioned on the adhesive sheet S, and wound on a guide member 41; and a sandwiching means 16 for sandwiching the adhesive sheet S between the endless member 45 and the sandwiching means 16. In the sheet peeling apparatus 10, the adhesive sheet S is peeled off due to the relative movement of the pulling means 13 and the supporting means 11 in a state that the adhesive sheet S is sandwiched between the peeling assisting means 15 and the sandwiching means 16.

Conventionally, a semiconductor wafer (hereinafter, simply referred to as "wafer") is stuck with an adhesive sheet for protecting a circuit surface thereof. For example, the adhesive sheet is peeled off through a sheet peeling apparatus after a back grinding processing and the like of the wafer is carried out.
The above-mentioned peeling of the adhesive sheet can be performed, for example, using a sheet peeling apparatus disclosed in a patent document 1. The apparatus is configured to stick a peeling tape to an adhesive sheet stuck on a wafer, and when pulling the peeling tape, move the edge member and the wafer relative to each other while pressing an edge member having a tip formed in an acute angle against the adhesive sheet and pulling the peeling tape.    [Patent document 1] Japanese Patent Laid-Open No. 2002-124494

Sheet peeling apparatus and peeling method


An electronic equipment in a wireless communication system, and a wireless communication method. The wireless communication system includes at least one first cell and at least one second cell, and at least one of the second cells is operating in an unlicensed band. The electronic equipment includes one or more processing circuits configured to perform: configuring for a user equipment at least one second cell operating in an unlicensed band to perform carrier aggregation communication; and generating, dynamically or semi-statically, energy detection threshold information for each second cell operating in the unlicensed band so that the user equipment can perform energy detection on the unlicensed band according to the energy detection threshold information.

This part provides background information related to the present disclosure, which is not necessarily the conventional technology.
With the development and evolution of wireless networks, more and more services are carried by the wireless networks. In this case, additional spectrum resources are required to support transmission of a large amount of data. Cellular wireless network operators start discussing how to use unlicensed spectrum resources such as the industrial scientific medical (ISM) frequency band of 5 GHz, while using the existing long term evolution (LTE) networks. On the other hand, the WiFi wireless industry deploys more WiFi systems in the unlicensed spectrum. Communication systems of different operators have equal rights to use the unlicensed frequency band. How to use the same unlicensed frequency band fairly and effectively is urgent to be solved in the industry. At present, a consensus reached in the industry is that the unlicensed frequency band needs to be used with the assistance of the licensed frequency band, and terminals are served through carrier aggregation.
For the coexistence of the two systems, in an existing method, different spectrum usage time periods are allocated to two different systems, and the two systems use the spectrum resources in a time division manner. LTE systems of different operators use the unlicensed frequency band simultaneously and perform spectrum usage backoff simultaneously, so that the WiFi systems have chances to use the spectrum. In this case, cells using the unlicensed frequency band belong to different operators are required to be synchronized. In addition, in order to ensure that the LTE systems and the WiFi systems coexist and use the spectrum resources in a time division manner, in the conventional technology, the LTE systems transmit WiFi signals, in this way, the WiFi systems can stop transmission for a time period, so that the LTE systems can perform transmission, which results in a great change in existing standards and chips.
Therefore, a new wireless communication technology solution is necessary to optimize use of an unlicensed spectrum without significantly changing the existing standards and chips.

Electronic equipment in wireless communication system and wireless communication method


The invention is directed to nonpeptide substituted benzodiazepines of Formula I,

This invention relates to novel nonpeptide substituted vasopressin receptor antagonists. More particularly, the compounds of the present invention interrupt the binding of the peptide hormone vasopressin to its receptors and are therefore useful for treating conditions involving increased vascular resistance and cardiac insufficiency.
Vasopressin is a nonpeptide hormone that is secreted primarily from the posterior pituitary gland. The hormone effects its actions through the vascular V-1 and renal V-2 receptor subtypes. The functions of vasopressin include contraction of uterine, bladder, and smooth muscle; stimulation of glycogen breakdown in the liver; release of corticotropin from the anterior pituitary; induction of platelet aggregation; and central nervous system modulation of behaviors and stress responses. The V-1 receptor mediates the contraction of smooth muscle, and hepatic glycogenolytic and central nervous system effects of vasopressin. The V-2 receptor, presumably found only in the kidney, effects the antidiuretic actions of vasopressin via stimulation of adenylate cyclase.
Elevated plasma vasopressin levels appear to play a role in the pathogenesis of congestive heart failure (P. A. Van Zwieten, Progr. Pharmacol. Clin. Pharmacol. 1990, 7, 49). As progress toward the treatment of congestive heart failure, nonpeptide vasopressin V-2 receptor antagonists have induced low osmolality aquaresis and decreased peripheral resistance in conscious dogs with congestive heart failure (H. Ogawa, J. Med. Chem. 1996, 39, 3547). In certain pathological states, plasma vasopressin levels may be inappropriately elevated for a given osmolality, thereby resulting in renal water retention and hyponatremia. Hyponatremia, associated with edematous conditions (cirrhosis, congestive heart failure, renal failure), can be accompanied by the syndrome of inappropriate secretion of antidiuretic hormone (SIADH). Treatment of SIADH-compromised rats with a vasopressin V-2 antagonist has corrected their existing hyponatremia (G. Fujisawa, Kidney Int. 1993, 44(1), 19). Due in part to the contractile actions of vasopressin at its V-1 receptor in the vasculature, vasopressin V-1 antagonists have reduced blood pressure as a potential treatment for hypertension as well. Thus, vasopressin receptor antagonists could be useful as therapeutics in the conditions of hypertension, congestive heart failure/cardiac insufficiency, coronary vasospasm, cardiac ischemia, liver cirrhosis, renal vasospasm, renal failure, cerebral edema and ischemia, stroke, thrombosis, and water retention.
The present invention is directed to compounds represented by the following formula I:
wherein
R1 is selected from xe2x80x94COOH, formyl, o-mesylate, xe2x80x94SO2OH, alkoxysulfonyl, alkylcarboxy, substituted alkylcarboxy, aralcarboxy, substituted aralcarboxy, xe2x80x94NR4R5, xe2x80x94OH, cyano, N-morpholino, alkoxy, aralkoxy, alkylcarbamoyl, substituted alkylcarbamoyl, alkoxycarbonyl, substituted alkoxycarbonyl, xe2x80x94NHCOR6 and xe2x80x94CONR 7R8, wherein
R4, R5, R6, and R8 are independently selected from the group consisting of H, alkyl, and aryl;
A is S, SO or SO2;
X is CH2 or carbonyl;
Z is CH2, SO2 or carbonyl, with the proviso that X is not CH2 when Z is CH2;
B is (CH2)m, NH or O;
W is aryl, substituted aryl, heteroaryl or substituted heteroaryl;
R2 is xe2x80x94N(H)YR3 or xe2x80x94YN(H)R3 wherein Y is H or carbonyl;
R3 is H, alkyl, substituted alkyl, aryl or substituted aryl;
m is 1-3;
n is 1-5; and
p is 0 or 1.
The compounds of the present invention are vasopressin receptor antagonists useful as aquaretics and, in general, in disease states of vascular resistance.
Illustrative of the invention is a pharmaceutical composition comprising a pharmaceutically acceptable carrier and any of the compounds described above. Illustrating the invention is a pharmaceutical composition made by mixing any of the compounds described above and a pharmaceutically acceptable carrier. An illustration of the invention is a process for making a pharmaceutical composition comprising mixing any of the compounds described above and a pharmaceutically acceptable carrier.
An example of the invention is a method of treating congestive heart failure in a subject in need thereof comprising administering to the subject a therapeutically effective amount of any of the compounds or pharmaceutical compositions described above.
Another example of the invention is a method of inhibiting the onset of a condition of vascular resistance in the subject, which comprises administering to the subject a prophylactically effective dose of the pharmaceutical composition of a compound of Formula I.
Further exemplifying the invention is the method of treating congestive heart failure, wherein the therapeutically effective amount of the compound is about 1 to about 30 mg/kg/day.
Still further exemplifying the invention is the method of inhibiting the onset of congestive heart failure, wherein the prophylactically effective amount of the compound is about 1 to about 30 mg/kg/day.
An additional illustration of the invention is a method of treating a condition selected from hypertension, congestive heart failure, cardiac insufficiency, coronary vasospasm, cardiac ischemia, liver cirrhosis, renal vasospasm, renal failure, cerebral edema and ischemia, stroke, thrombosis, or water retention in a subject in need thereof comprising administering to the subject a therapeutically effective amount of any of the compounds or pharmaceutical compositions described above. Preferably, the therapeutically effective amount of the compound administered for treating any of these conditions is about 1 to about 30 mg/kg/day.
Also included in the invention is the use of any of the compounds described above for the preparation of a medicament for treating a condition selected from inner ear disorders, hypertension, congestive heart failure, cardiac insufficiency, coronary vasospasm, cardiac ischemia, liver cirrhosis, renal vasospasm, renal failure, cerebral edema and ischemia, stroke, thrombosis, or water retention in a subject in need thereof.
The present invention provides nonpeptide substituted benzothiazepine compounds which are useful as antagonists of vasopressin. More particularly, the compounds of Formula I inhibit the binding of vasopressin to V-1 and V-2 receptors, and are therefore useful in treating conditions with increased vascular resistance. Examples of conditions with increased vascular resistance include, but are not limited to, congestive heart failure, edema, water retaining states, and the like. More particularly, the present invention is directed to compounds of Formula I:
wherein
R1 is selected from xe2x80x94COOH, formyl, o-mesylate, xe2x80x94SO2OH, alkoxysulfonyl, alkylcarboxy, substituted alkylcarboxy, aralcarboxy, substituted aralcarboxy, xe2x80x94NR4R5, xe2x80x94OH, cyano, N-morpholino, alkoxy, aralkoxy, alkylcarbamoyl, substituted alkylcarbamoyl, alkoxycarbonyl, substituted alkoxycarbonyl, xe2x80x94NHCOR6 and xe2x80x94CONR7R8, wherein
R4, R5, R6, R7, and R8 are independently selected from the group consisting of H, alkyl, and aryl;
A is S, SO or SO2;
X is CH2 or carbonyl;
Z is CH2, SO2 or carbonyl, with the proviso that X is not CH2 when Z is CH2;
B is (CH2)m, NH or O;
W is aryl, substituted aryl, heteroaryl or substituted heteroaryl;
R2 is xe2x80x94N(H)YR3 or xe2x80x94YN(H)R3 wherein Y is H or carbonyl;
R3 is H, alkyl, substituted alkyl, aryl or substituted aryl;
m is 1-3;
n is 1-5; and
p is 0 or 1.
The nonpeptide substituted benzodiazepine compounds of the present invention are vasopressin receptor antagonists, in a preferred embodiment, the compounds are orally active. As demonstrated by the results of the pharmacological studies described hereinafter, the compounds show the ability to block vasopressin binding to recombinant V-1 and V-2, and therefore are useful as therapeutics in or prophylactics against the conditions of hypertension, congestive heart failure/cardiac insufficiency, coronary vasospasm, cardiac ischemia, liver cirrhosis, renal vasospasm, renal failure, cerebral edema and ischemia, stroke, thrombosis, and water retention.
In particular, compounds of Formula I, wherein R1 is xe2x80x94COOH, formyl, o-mesylate, xe2x80x94SO2OH, alkylcarboxy, substituted alkylcarboxy, aralcarboxy, substituted aralcarboxy, cyano, N-morpholino, alkoxy, aralkoxy, alkylcarbamoyl, or substituted alkylcarbamoyl, are embodiments of the present invention.
More particularly, compounds of Formula I wherein A is S, p is 0, and n is 1 or 2 are embodiments of this invention.
Compounds of Formula I wherein X is CH2 and Z is carbonyl, are also particular embodiments of this invention.
Compounds of Formula I wherein W is phenyl, substituted phenyl, benzyl, substituted benzyl, pyridinyl, substituted pyridinyl, naphthyl or substituted naphthyl, are still particular embodiments of this invention.
Compounds of Formula I, wherein R2 is xe2x80x94N(H)YR3 in which Y is carbonyl and R3 is substituted phenyl, are further particular embodiments of the present invention. In particular, compounds of Formula I wherein R2 is xe2x80x94NHCO(2-Ph)Ph are yet other embodiments of the present invention.
Compounds of Formula I, wherein R3 is phenyl or substituted phenyl, are still other embodiments of the present invention.
In addition, compounds of Formula I, wherein R1 is amine, substituted amine, xe2x80x94NHCOR6 or xe2x80x94CONR7R8 wherein R61, R7 and R8 are as described hereinabove, are particular embodiments of the present invention.
More particularly, compounds of Formula I wherein
R1 is selected from xe2x80x94NH2, xe2x80x94NHCH3, xe2x80x94N(CH3)2, xe2x80x94NHBOC, xe2x80x94N(BOC;)2, xe2x80x94NHCOC (CH3)2NH2, xe2x80x94N(COC (CH3)2NH2)2 and xe2x80x94NCH2 (2,5xe2x80x94OCH3) Ph;
W is Ph or substituted Ph;
R2 is xe2x80x94NH2, xe2x80x94NHAc, xe2x80x94NHCO(2-CH3)Ph or xe2x80x94NHCO(2-Ph)Ph; and
p is 0
are also particular embodiments of the present invention.
Compounds of Formula I wherein R1 is xe2x80x94OH are particular embodiments of the present invention, too.
More particularly, compounds of Formula I wherein
R1 is xe2x80x94OH;
W is heteroaryl, Ph or substituted Ph;
R2 is xe2x80x94NH2, xe2x80x94NHAc, xe2x80x94NHCOCH3, xe2x80x94NHCO(2-CH3)Ph, xe2x80x94NHCO(2-Ph)Ph, xe2x80x94NHCO(2-CH3,5-F)Ph, or xe2x80x94NHCO(3,4-Cl)Ph; and
p is 0
are also particular embodiments of the present invention.
Compounds of Formula I wherein R1 is alkoxycarbonyl, substituted alkoxycarbonyl, or xe2x80x94CONR7R8 wherein R7 and R8 are as described hereinabove, are particular embodiments of the present invention as well.
More particularly, compounds of Formula I wherein
R1 is alkoxycarbonyl, substituted alkoxycarbonyl, or xe2x80x94CONR7R8 wherein R7 and R8 are as described hereinabove;
Z is carbonyl;
W is Ph or substituted Ph;
R2 is xe2x80x94NHCO(2-Ph)Ph; and
p is 0
are also particular embodiments of the present invention.
The following compounds are further particular embodiments of the present invention:
Compound 24: 2-Carboxymethyl-1-oxo-5-(4-(2-phenylbenzoylamino)benzoyl)-1,5-benzothiazepine
Compound 29: 2-Carboxymethyl-5-(4-(2-phenylbenzolylamino)benzoyl)-1,5-benzothiazepine
Compound 31: 2-(2-Carboxyethyl)-5-[4-(2-phenylbenzoylamino)benzoyl]-1,5-benzothiazepine
Compound 33 and Compound 34: 2-Carboxymethyl-5-[4-(2-phenylbenzoylamino)benzoyl]-1, 5-benzothiazepine
The compounds of the present invention may also be present in the form of a pharmaceutically acceptable salt or salts. For use in medicine, the salt or salts of the compounds of this invention refer to non-toxic xe2x80x9cpharmaceutically acceptable salt or salts.xe2x80x9d Other salts may, however, be useful in the preparation of compounds according to this invention or of their pharmaceutically acceptable salts. Representative organic or inorganic acids include, but are not limited to, hydrochloric, hydrobromic, hydriodic, perchloric, sulfuric, nitric, phosphoric, acetic, propionic, glycolic, lactic, succinic, maleic, fumaric, malic, tartaric, citric, benzoic, mandelic, methanesulfonic, hydroxyethanesulfonic, benezenesulfonic, oxalic, pamoic, 2-naphthalenesulfonic, p-toluenesulfonic, cyclohexanesulfamic, salicylic, saccharinic or trifluoroacetic acid. Representative basic/cationic salts include, but are not limited to, benzathine, chloroprocaine, choline, diethanolamine, ethylenediamine, meglumine, procaine, aluminum, calcium, lithium, magnesium, potassium, sodium, or zinc.
Where the compounds according to this invention have at least one stereogenic center, they may accordingly exist as enantiomers. Where the compounds possess two or more stereogenic centers, they may additionally exist as diastereomers. It is to be understood that all such isomers and mixtures thereof are encompassed within the scope of the present invention. Furthermore, some of the crystalline forms for the compounds may exist as polymorphs and as such are intended to be included in the present invention. In addition, some of the compounds may form solvates with water (i.e., hydrates) or common organic solvents, and such solvates are also intended to be encompassed within the scope of this invention.
The term xe2x80x9csubjectxe2x80x9d as used herein, refers to an animal, preferably a mammal, most preferably a human, who has been the object of treatment, observation or experiment.
As used herein, xe2x80x9ctreatingxe2x80x9d a disorder means eliminating or otherwise ameliorating the cause and/or effects thereof. To xe2x80x9cinhibitxe2x80x9d or xe2x80x9cinhibitingxe2x80x9d the onset of a disorder means preventing, delaying or reducing the likelihood of such onset.
Methods are known in the art for determining therapeutically and prophylactically effective doses for the instant pharmaceutical composition. The term xe2x80x9ctherapeutically effective amountxe2x80x9d as used herein, means that amount of active compound or pharmaceutical agent that elicits the biological or medicinal response in a tissue system, animal or human that is being sought by a researcher, veterinarian, medical doctor or other clinician, which includes alleviation of the symptoms of the disease or disorder being treated. The term xe2x80x9cprophylactically effective amountxe2x80x9d refers to that amount of active compound or pharmaceutical agent that inhibits in a subject the onset of a disorder as being sought by a researcher, veterinarian, medical doctor or other clinician, the delaying of which disorder is mediated by the reduction of increased vascular resistance.
Unless otherwise noted, under standard nomenclature used throughout this disclosure the terminal portion of the designated side chain is described first, followed by the adjacent functionality toward the point of attachment.
Unless otherwise noted, xe2x80x9calkylxe2x80x9d and xe2x80x9calkoxyxe2x80x9d as used herein, whether used alone or as part of a substituent group, include straight and branched chains having 1 to 8 carbon atoms, or any number within this range. For example, alkyl radicals include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, t-butyl, n-pentyl, 3-(2-methyl)butyl, 2-pentyl, 2-methylbutyl, neopentyl, n-hexyl, 2-hexyl and 2-methylpentyl. Alkoxy radicals are oxygen ethers formed from the previously described straight or branched chain alkyl groups. Cycloalkyl groups contain 3 to 8 ring carbons and preferably 5 to 7 rung carbons.
The term xe2x80x9cArxe2x80x9d or xe2x80x9carylxe2x80x9d as used herein, whether used alone or as part of a substituent group, refers to an aromatic group such as phenyl and naphthyl. When the Ar or aryl group is substituted, it may have one to three substituents which are independently selected from C1-C8 alkyl, C1-C8 alkoxy, fluorinated C1-C8 alkyl (e.g., trifluoromethyl), fluorinated C1-C8 alkoxy (e.g., trifluoromethoxy), halogen, cyano, hydroxy, amino, nitro, C1-C4 alkylamino (i.e., xe2x80x94NHxe2x80x94C1-C4 alkyl), C1-C4 dialkylamino (i.e., xe2x80x94Nxe2x80x94[C1-C4 alkyl]2 wherein the alkyl groups can be the same or different), or unsubstituted, mono-, di- or tri-substituted phenyl wherein the substituents on the phenyl are independently selected from C1-C8 alkyl, C1-C8 alkoxy, fluorinated C1-C8 alkyl, fluorinated C1-C8 alkoxy, halogen, cyano, hydroxy, amino, nitro, alkylamino, dialkylamino or heteroaryl. xe2x80x9cPhxe2x80x9d or xe2x80x9cPHxe2x80x9d denotes phenyl.
The term xe2x80x9cheteroarylxe2x80x9d as used herein represents a stable five or six membered monocyclic aromatic ring system which consists of carbon atoms and from one to three heteroatoms selected from N, O or S. The heteroaryl group may be attached at any heteroatom or carbon atom which results in the creation of a stable structure. Examples of heteroaryl groups include, but are not limited to pyridinyl, pyrazinyl, pyridazinyl, pyrimidinyl, thiophenyl, furanyl, imidazolyl, isoxazolyl, oxazolyl, pyrazolyl, pyrrolyl, thiazolyl, thiadiazolyl, triazolyl, benzimidazolyl, benzofuranyl, benzothienyl, benzisoxazolyl, benzoxazolyl, benzopyrazolyl, indolyl, benzothiazolyl, benzothiadiazolyl, benzotriazolyl or quinolinyl. Prefered heteroaryl groups include pyridinyl, thiophenyl, furanyl and quinolinyl. When the heteroaryl group is substituted, the heteroaryl group may have one to three substituents which are independently selected from C1-C8 alkyl, halogen, aryl, heteroaryl, alkoxy, alkylamino, dialkylamino, arylamino, nitro, and hydroxy.
The term xe2x80x9caralkoxyxe2x80x9d indicates an alkoxy group substituted with an aryl group (e.g., benzyloxy).
The term xe2x80x9cacylxe2x80x9d as used herein, whether used alone or as part of a substituent group, means an organic radical having 2 to 6 carbon atoms (branched or straight chain) derived from an organic acid by removal of the hydroxyl group.
The term xe2x80x9chalogenxe2x80x9d shall include iodine, bromine, chlorine and fluorine.
The terms xe2x80x9csubstituted alkylcarboxy,xe2x80x9d xe2x80x9csubstituted aralcarboxyxe2x80x9d and xe2x80x9csubstituted alkylcarbamoylxe2x80x9d denote alkylcarboxy, aralcarboxy and alkylcarbamoyl substituted with radicals including, but not limited to, halogen, alkyl, alkoxy, amino, and the like.
Whenever the term xe2x80x9calkylxe2x80x9d, xe2x80x9cacylxe2x80x9d, or xe2x80x9carylxe2x80x9d or either of their prefix roots appear in a name of a substituent (e.g., aralkyl, dialkylamino) it shall be interpreted as including those limitations given above for xe2x80x9calkylxe2x80x9d, xe2x80x9cacylxe2x80x9d, and xe2x80x9caryl.xe2x80x9d Designated numbers of carbon atoms (e.g., C1-C6) shall refer independently to the number of carbon atoms in an alkyl or cycloalkyl moiety or to the alkyl portion of a larger substituent in which alkyl appears as its prefix root.
It is intended that the definition of any substituent or variable at a particular location in a molecule be independent of its definitions elsewhere in that molecule. It is understood that substituents and substitution patterns on the compounds of this invention can be selected by one of ordinary skill in the art to provide compounds that are chemically stable and that can be readily synthesized by techniques known in the art as well as those methods set forth herein.
As used herein, the term xe2x80x9ccompositionxe2x80x9d is intended to encompass a product comprising the specified ingredients in the specified amounts, as well as any product which results, directly or indirectly, from combinations of the specified ingredients in the specified amounts.
The utility of the compounds to treat disorders of increased vascular resistance can be determined according to the procedures described herein. The present invention therefore provides a method of treating vascular resistance disorders in a subject in need thereof which comprises administering any of the compounds as defined herein in a quantity effective to treat vascular resistance disorders. The compound may be administered to a patient by any conventional route of administration, including, but not limited to, intravenous, oral, subcutaneous, intramuscular, intradermal and parenteral.
The present invention also provides pharmaceutical compositions comprising one or more compounds of this invention in association with a pharmaceutically acceptable carrier.
To prepare the pharmaceutical compositions of this invention, one or more compounds of Formula I or salt thereof of the invention as the active ingredient, is intimately admixed with a pharmaceutical carrier according to conventional pharmaceutical compounding techniques, which carrier may take a wide variety of forms depending of the form of preparation desired for administration, e.g., oral or parenteral such as intramuscular. In preparing the compositions in oral dosage form, any of the usual pharmaceutical media may be employed. Thus, for liquid oral preparations, such as for example, suspensions, elixirs and solutions, suitable carriers and additives include water, glycols, oils, alcohols, flavoring agents, preservatives, coloring agents and the like; for solid oral preparations such as, for example, powders, capsules, caplets, gelcaps and tablets, suitable carriers and additives include starches, sugars, diluents, granulating agents, lubricants, binders, disintegrating agents and the like. Because of their ease in administration, tablets and capsules represent the most advantageous oral dosage unit form, in which case solid pharmaceutical carriers are obviously employed. If desired, tablets may be sugar coated or enteric coated by standard techniques. For parenterals, the carrier will usually comprise sterile water, through other ingredients, for example, for purposes such as aiding solubility or for preservation, may be included. Injectable suspensions may also be prepared, in which case appropriate liquid carriers, suspending agents and the like may be employed.
The pharmaceutical compositions herein will contain, per dosage unit, e.g., tablet, capsule, powder, injection, teaspoonful and the like, an amount of the active ingredient necessary to deliver an effective dose as described above. The pharmaceutical compositions herein will contain, per unit dosage unit, e.g., tablet, capsule, powder, injection, suppository, teaspoonful and the like, of from about 1 mg to 30 mg/kg and may be given at a dosage of from about 1 to 30 mg/kg/day (preferred 3 to 15 mg/kg/day). The dosages, however, may be varied depending upon the requirement of the patients, the severity of the condition being treated and the compound being employed. The use of either daily administration or post-periodic dosing may be employed.
Preferably these compositions are in unit dosage forms such as tablets, pills, capsules, powders, granules, sterile parenteral solutions or suspensions, metered aerosol or liquid sprays, drops, ampoules, autoinjector devices or suppositories; for oral parenteral, intranasal, sublingual or rectal administration, or for administration by inhalation or insufflation. Alternatively, the composition may be presented in a form suitable for once-weekly or once-monthly administration; for example, an insoluble salt of the active compound, such as the decanoate salt, may be adapted to provide a depot preparation for intramuscular injection. For preparing solid compositions such as tablets, the principal active ingredient is mixed with a pharmaceutical carrier, e.g. conventional tableting ingredients such as corn starch, lactose, sucrose, sorbitol, talc, stearic acid, magnesium stearate, dicalcium phosphate or gums, and other pharmaceutical diluents, e.g. water, to form a solid preformulation composition containing a homogeneous mixture of a compound of the present invention, or a pharmaceutically acceptable salt thereof. When referring to these preformulation compositions as homogeneous, it is meant that the active ingredient is dispersed evenly throughout the composition so that the composition may be readily subdivided into equally effective dosage forms such as tablets, pills and capsules. This solid preformulation composition is then subdivided into unit dosage forms of the type described above containing from 0.1 to about 500 mg of the active ingredient of the present invention. The tablets or pills of the novel composition can be coated or otherwise compounded to provide a dosage form affording the advantage of prolonged action. For example, the tablet or pill can comprise an inner dosage and an outer dosage component, the latter being in the form of an envelope over the former. The two components can be separated by an enteric layer which serves to resist disintegration in the stomach and permits the inner component to pass intact into the duodenum or to be delayed in release. A variety of material can be used for such enteric layers or coatings, such materials including a number of polymeric acids with such materials as shellac, cetyl alcohol and cellulose acetate.
The liquid forms in which the novel compositions of the present invention may be incorporated for administration orally or by injection include, aqueous solutions, suitably flavoured syrups, aqueous or oil suspensions, and flavoured emulsions with edible oils such as cottonseed oil, sesame oil, coconut oil or peanut oil, as well as elixirs and similar pharmaceutical vehicles. Suitable dispersing or suspending agents for aqueous suspensions, include synthetic and natural gums such as tragacanth, acacia, alginate, dextran, sodium carboxymethylcellulose, methylcellulose, polyvinyl-pyrrolidone or gelatin.
Where the processes for the preparation of the compounds according to the invention give rise to mixture of stereoisomers, these isomers may be separated by conventional techniques such as preparative chromatography. The compounds may be prepared in racemic form, or individual enantiomers may be prepared either by enantiospecific synthesis or by resolution. The compounds may, for example, be resolved into their components enantiomers by standard techniques, such as the formation of diastereomeric pairs by salt formation. The compounds may also be resolved by formation of diastereomeric esters or amides, followed by chromatographic separation and removal of the chiral auxiliary. Alternatively, the compounds may be resolved using a stereogenic HPLC column.
During any of the processes for preparation of the compounds of the present invention, it may be necessary and/or desirable to protect sensitive or reactive groups on any of the molecules concerned. This may be achieved by means of conventional protecting groups, such as those described in Protective Groups in Organic Chemistry, ed. J. F. W. McOmie, Plenum Press, 1973; and T. W. Greene and P. G. M. Wuts, Protective Groups in Organic Synthesis, John Wiley and Sons, 1991. The protecting groups may be removed at a convenient subsequent stage using methods known from the art.

Nonpeptide substituted benzothiazepines as vasopressin antagonists

Abstract: wherein A, X, Z, Bp, W, n, R1 and R2 are as described in the specification, which are useful as vasopressin receptor antagonists for treating conditions involving increased vascular resistance and cardiac insufficiency. Pharmaceutical compositions comprising a compound of Formula I and methods of treating conditions such as hypertension, congestive heart failure, cardiac insufficiency, coronary vasospasm, cardiac ischemia, liver cirrhosis, renal vasospasm, renal failure, cerebral edema and ischemia, stroke, thrombosis, or water retention are also disclosed.


A system for teaching music and an associated method of teaching music. The system and method for teaching music use multiple bodies that are each associated with a unique letter that corresponds to the letters A through G from the Latin alphabet and each body has a natural music notes on at least the top or bottom face and an accidental music note of the same letter on at least the front or back face.

Musical scales, chords and other musical basics are typically taught through instructional textbooks or similar devices and methods. Many times, music students cannot easily relate with these instructional textbooks. Textbooks typically use musical staffs to teach students music theory and how to play individual instruments. Generally, students learn scales, chords, and other music basics by memorization and repetition of those basics on corresponding individual instruments.
Ultimately, this may produce a disconnect between the students understanding scales while using multiple different individual instruments. Many times, students will be able to understand and play the various scales, chords, etc. on one instrument, but ultimately will not be able to correlate those same scales, chords, etc. with another instrument.
Furthermore, frequently most instructional textbooks do not provide a means for students to physically interact when learning scales, chords and other music basics. Oftentimes, music basics are taught to students in formats that are confusing and not easily understandable. Routinely, textbooks use a music staff to teach students scales, chords, etc. or textbooks use other charts such as the circle of fifths to show relationships betweens scales, chords and key signatures.
Nevertheless, not all students are able to learn musical scales and chords in a visual sense with no physical interaction. Many times, students may need some form of physical stimuli to facilitate the learning process. Consequently, there is a need for a new system and method for learning musical scales and chords. Preferably, the system and method of learning musical scales and chords utilizes physical stimuli in the learning process. It is preferred that that system and method makes learning fun and easy by reinforcing the basics of musical scales and chords beyond the printed page. Preferably, the musical system and method saves students time and energy when learning musical scales, chords, sight reading, intervals, key signatures and other musical basics.


A satellite broadcast system is used to transmit streams of variable bit-rate content using fixed bit-rate channels that correspond to respective satellite transponder carriers. High bandwidth content is transmitted over multiple transponder carriers in parallel with a combined bandwidth sufficient for the peak bit-rate of the high bandwidth content, whereas multiple streams of low bandwidth content can be transmitted over a single transponder carrier simultaneously by multiplexing the low bandwidth content. High bandwidth content may be multiplexed with low bandwidth content rather than assigning all high bandwidth content to be transmitted exclusively over dedicated high bandwidth transponders.

Satellite broadcast systems are used to distribute audio, video, and data content to end users using a constellation of communication satellites. Media content is encoded on modulated radio frequency signals that are transmitted to the satellite network in an uplink transmission. The communication satellites are equipped with multiple transponders that process the incoming uplink signal and then transmit a frequency-shifted version of the uplink signal as the downlink signal. Satellite broadcast systems thereby allow for wirelessly distributing media content without a direct line of sight between the uplink station and each subscriber. As these systems have evolved, there has been an ongoing demand for additional bandwidth and/or more efficient use of existing bandwidth to carry an ever-increasing amount of content. Due to a combination of existing legacy hardware systems and regulatory issues, most content continues to be broadcast over a set of transmission channels with fixed bandwidth capacities.
In a simple version, each of the transponders may function as repeaters that emit a frequency-shifted version of a portion of the uplink signal. Together, a set of transponders on the satellite can be used to create a downlink signal on a set of carriers that each correspond to one of the transponders. Thus, the set of transponders on a satellite define a set of downlink carriers (channels) for reception at receiver stations on the ground for each subscriber. The receiver stations include an antenna (e.g., a satellite dish) for detecting the downlink signals and a set top box (STB) that receives signals detected at the antenna and extracts the digital media content streams from those signals. The STB can include various hardware components for tuning and demodulating the radio frequency downlink signals, signal processing electronics for decoding, applying error correction, and/or video drivers that convert the media data stream into instructions for driving a video display.
To ease bandwidth constraints, video data is generally compressed prior to transmission using techniques based on standards such as MPEG-2 and MPEG-4 and various other coder/decoder specifications (codecs). Video compression reduces the required bandwidth of a given video stream while maintaining high visual quality. Compression also results in a variable bit-rate data stream. In particular, video compression requires a relatively high bit rate to represent video scenes depicting rapid movement or scenes with high degree of textured scenery (e.g., a sporting event) whereas a relatively low bit rate is required to represent video scenes depicting a stable background scene with slow movement in the foreground (e.g., a news program).
To accommodate a variable bit-rate compressed video signal on a fixed bit-rate carrier channel, the bandwidth capacity of the carrier channel must exceed the peak bit-rate of the video signal. For most types of compressed video content, the peak bit-rate exceeds the average bit-rate by a significant amount. To make efficient use of the bandwidth capacity of the carrier channels, multiple compressed video signals may be multiplexed together using a statistical multiplexer prior to transmission over the fixed bit-rate carrier channels. Because the bit-rate peaks of the different compressed video signals are unlikely to occur simultaneously, the combined signal provides a data stream with a relatively more stable bit-rate to be transmitted over the fixed bit-rate carrier. The combined signal may have a bit-rate that corresponds to the bandwidth capacity of a single transponder carrier, and the combined signal can be transmitted using a single transponder.
In practice, additional bandwidth margin is required for error correction, overhead messaging, and accounting for occasional bit-rate peaks in the combined signal, but the statistical multiplexing process still provides spectral efficiency benefits when transmitting multiple variable bit-rate signals over fixed bit-rate channels, such as satellite transponder carriers.
In addition to the compression used, the bandwidth required to stream video data also depends on the resolution and frame rate of the underlying video. A digital video stream can be thought of as a series of images of a particular resolution as well as associated audio content. Each frame of a video is an image with pixels arranged in rows and columns. Video resolution is typically characterized by the number of rows of pixels in each frame image. The frame rate typically refers to the speed at which each frame is displayed as the video is played out. The frame rate may also be referred to as the refresh rate (e.g., the time between successive updates of a given pixel value). Progressive video updates each pixel of a frame at each frame refresh. Interlaced video updates alternating rows for each frame refresh. Thus, interlaced video requires less bandwidth than progressive video for a given resolution and frame rate of the same video content.
For example, standard definition (SD) video refers to a class of video content with frames having 480 rows that are progressively scanned and frame rates of about 24 or 30 frames per second. For shorthand, such SD video may be identified as 480p24 (i.e., 480 rows per frame, progressively scanned, at 24 frames per second) or 480p30 (i.e., 480 rows per frame, progressively scanned, at 30 frames per second). Similarly, high definition (HD) video may be identified as 720p24 (i.e., 720 rows per frame, progressively scanned, at 24 frames per second) or 1080i30 (i.e., 1080 rows per frame, interlaced, at 30 frames per second), or 1080p24 (i.e., 1080 rows per frame, progressively scanned, at 24 frames per second).
Existing satellite transponders have bandwidth capacities sufficient to carry a multiplexed stream of a combination of two to ten compressed video streams when the underlying video content is SD video or HD video (e.g., 480p24, 1080i30 or 720p24). Such video content is referred to as low bandwidth, because the bandwidth requirement of such content is low compared to the bandwidth capacity of an individual satellite transponder carrier. However, video content requiring higher bit rates is being introduced, such as 1080p60, high definition three-dimensional video (which requires twice the frame rate to separately display content for perception by the left and right eyes in alternating frames), and 4KTV, which has twice the number of rows as high definition television, and thus four times the number of pixels per frame (e.g., 2160p24). Such video content is referred to as high bandwidth, because the bandwidth requirement of such content is high compared to the bandwidth capacity of an individual satellite transponder carrier channel.

Data distribution amongst transponder carriers


An audio coding device which includes an analyzing unit for conducting frequency analyses of an input audio signal, a bit weighting unit for generating a weight signal based on an analysis signal, and a filter for converting an input audio signal into a plurality of frequency band signals. The audio coding device also has a bit allocating unit for generating quantization data from a frequency band signal based on a value of a weight signal, and a frame packing unit for generating compression data from quantization data and outputting the compression data. A frame completion determining unit determines whether weight allocation processing is normally completed or not, and a storage unit stores the last weight signal recognized as having weight allocation processing normally completed. Further, a switching unit supplies the bit allocating unit with a weight signal stored in the storage unit in place of a weight signal generated by the bit weighting unit according to the determination results of the frame completion determining unit.

1. Field of the Invention
The present invention relates to an audio coding device for coding an audio signal and an audio decoding device for decoding a coded audio signal and, more particularly, to an audio coding device and an audio decoding device which conduct highly efficient audio coding and decoding such as MPEG audio systems or the like.
2. Description of the Related Art
Known as an audio signal coding system for television and the like is MPEG (Moving Picture Expert Group) whose standardization was studied by ISO/IEC,JTC1/SC2/WG8. One of the MPEG (hereinafter referred to as MPEG audio) standards which is provided for in the recommendation ISO/IEC-11172-3 (1993) prescribes a decoder for coded audio signals.
In highly efficient audio coding, such as MPEG audio and the like, efforts have been made to reduce information size in order to prevent the amount of information from increasing. It is conventionally a common method to conduct quantization bit weight processing within a period of a unit frame and allocate a quantization bit number to each frequency band.
An example of a structure of a conventional audio coding device is shown in FIG. 5 for coding an audio signal according to MPEG audio standards. With reference to FIG. 5, the conventional audio coding device includes a filter 101 which divides a band of an input audio signal AI and outputs a band signal BF at each of 5 frequency bands. A bit allocating unit 102 receives the band signal BF and a weight signal. The bit allocating unit 102 uses the subband bit allocation pattern signal, hereinafter referred to as a weight signal W, for allocating a quantization bit number for weighting each band signal BF, which is quantized to generate quantization data CQ. A frame packing unit 110 receives the quantization data CQ and outputs a compression signal CA according to the MPEG standards. A Fast Fourier Transform (hereinafter referred to as FFT) circuit 104 conducts frequency analyses of the input audio signal AI and provides an analysis signal FA to a bit weighting unit 105, which determines a weight corresponding to auditory characteristics, and provides the weight signal W to the bit allocating unit 102.
Operation of the conventional audio coding device is as follows. First, the applied audio signal AI is supplied to the FFT 104 and the filter 101. The FFT 104 conducts frequency analyses of the input audio signal AI and provides the analysis signal FA to the bit weighting unit.105. Utilizing auditory characteristics such as Fletcher-Munson characteristics, the bit weighting unit 105 determines a weight for frequency correction based on the data of the analysis signal FA to output the weight signal W.
The filter 101 divides the input audio signal AI into a plurality of frequency bands, each band having a fixed frequency width, and supplies the band signal BF to the bit allocating unit 102. The bit allocating unit 102 allocates a quantization bit number to the band signal BF of each frequency band and quantizes the band signal BF based on the weight signal W received from the bit weighting unit 105, as well as other information such as transmission rate of a compressed signal, to generate quantization data CQ. The frame packing unit 110 adds incidental information to the quantization data CQ to generate and output the compression data CA.
Here, the bit weight allocation processing conducted by the FFT 104, the bit weighting unit 105, and the bit allocating unit 102, varies considerably in time according to the amount of data of the analysis signal FA. There is a case where the time required for processing is so long that processing is not completed within a prescribed time of a unit frame period. In this case, the value of the bit weight signal W is indeterminate and causes a severe bit allocation error in the compression data CA. This error is the main factor which contributes to generation of quantization noise.
In addition, during coded audio signal decoding when a severe bit error of compression data is detected in a current frame, which error has resulted from unstable bit weighting as described above, an entire previous frame is decoded again. The previous frame is stored in a frame storing circuit immediately before the current frame with the detected bit error. This twice decoded previous frame is now the decoder output in place of the current frame with the error, in order to prevent noise generation resulting from the bit error.
FIG. 6 shows an example of a conventional audio decoding device for decoding an audio signal which is coded according to the MPEG standards. With reference to FIG. 6, the conventional audio decoding device includes a frame unpacking unit 121 for unpacking received compression data CA of each frame (hereinafter, referred to as current frame data) into decodable and operatable block data BD. The frame unpacking unit 21 supplies a decoding operation unit 123 and an error detecting unit 122 with the block data BD. The error detecting unit 122 outputs an error signal E upon detecting an error in the received block data BD. The decoding operation unit 123 decodes the received block data BD and outputs decoded data DA and interim operation data DM. An operation memory 124 stores the interim operation data DM. An output unit 125 converts the data DA into audio data AF. The conventional audio decoding device also includes a frame memory 126 for storing current frame data CA, which is input on a frame basis, and outputs memory data MA which is compressed data of a frame immediately before the current frame data CA (herein after referred to as a previous frame). A switch 127 performs selective switching between the current frame data CA and the previous frame data MA and supplies to the current or previous frame unpacking unit 121. For MPEG audio, typical required memory capacity of the operation memory 124 is approximately 27K bits, while the required memory capacity of the frame memory 126 is approximately 14K bits.
Next, operation of the conventional audio decoding device will be described. In the initial state, the switch 127 selects the current frame data CA. While applied current frame data CA is stored in the frame memory 126, it is supplied to the frame unpacking unit 121 through the switch 127. The frame unpacking unit 121 unpacks the applied current frame data CA into the block data BD according to a prescribed format, and supplies the block data BD to the decoding operation unit 123 and the error detecting unit 122. The decoding operation unit 123 conducts inverse quantization processing and operation processing such as filter operation according to a coding system with respect to the applied block data BD. Then, the decoding operation unit 123 supplies the output unit 125 with the decoded data DA, which is a result of the operation processing. The decoded data DA are sequentially stored in the operation memory 124 as interim operation data DM until operation of one block is completed. In addition, the decoded data DA are output in a lump to the output unit 125. The output unit 125 converts the decoded data DA into an audio signal AF which is modulated using, for example, pulse code modulation (PCM).
The error detecting unit 122 examines block data BD input from the frame detecting unit 21. When detecting an error, such as no synchronizing signal pattern in the block data BD and data format of the block data BD not complying with MPEG standards, the error detecting unit 122 outputs an error signal E to control the switch 127. Upon receiving the error signal E, the switch 127 switches to supply the frame unpacking unit 121 with the previous frame data MA, which is provided from the frame memory 126, instead of the current frame data 24. As a result, the previous frame data MA, which has been recognized as having no error, is divided and decoded in place of the current frame data CA.
As described in the foregoing, in conventional audio coding devices, the quantization bit weight allocation processing time varies considerably depending on the results of the frequency analysis by an FFT. Due to this considerable time variation, processing may not be completed within a prescribed time of a unit frame period in the worst case, rendering the results of weight allocation processing indeterminate. Conventional devices therefore have drawbacks, such that severe quantization bit number allocation error may occur in output compression data to cause serious quantization noise generation.
Further, conventional audio decoding devices require a frame memory capable of storing input compression data of more than one frame, because when an error is detected in input compression data, another decoding of the whole coded data of a previous frame, which is immediately before the current frame with the error, must be conducted.

Memory reduction for error concealment in subband audio coders by using latest complete frame bit allocation pattern or subframe decoding result


A binary mask layout design arranged hierarchically to include a plurality of levels is modified to include optical proximity effect corrections or phase shifting layers. This is accomplished by beginning at the lowest level of the hierarchy and modifying elements or cells in the design. Any modifications that are uniform to corresponding cells throughout the level are placed in the same level in the hierarchy. Any modifications that apply only to selected cells in the level are placed in a higher level in the hierarchy. The process is repeated for all levels in the hierarchy.

The present invention relates to processes for designing mask layouts used in the fabrication of semiconductor devices. More particularly, the present invention relates to processes for designing mask layouts that are arranged in a hierarchical format.
Advances in photolithographic techniques have resulted in decreases in the size of the features on a chip. The lateral dimensions of features are generally defined by photolithographic techniques in which a detailed pattern is transferred to a photoresist by shining light through a mask or reticle. As feature size has decreased, the number of features on a chip has increased. This has resulted in mask designs that are much larger and more complicated than earlier designs.
In recent years, phase shifting masks have been developed to improve photolithographic processes. Phase shifting masks increase image contrast and resolution without reducing wave length or increasing numerical aperture. These masks also improve depth of focus and process latitude for a given feature size.
With phase shift photolithography, the interference of light rays is used to overcome the problems of diffraction and improve the resolution and depth of optical images projected onto a target. With this technology, the phase of the exposure light at the target is controlled such that adjacent bright areas are preferably formed 180 degrees out of phase with each other. Dark regions are thus produced between the bright areas by destructive interference even when diffraction would otherwise cause these areas to be lit. This technique improves total resolution at the target.
In general, a phase shifting mask is constructed with a repetitive pattern formed of three distinct layers of material. An opaque layer provides areas that allow no light transmission. A first transparent layer provides areas which allow close to 100% of the light to pass through. A transparent phase shifting layer provides areas which allow close to 100% of the light to pass through but phase shifted 180 degrees from the light passing through the first transparent layer. The first transparent layer and the phase shifting layer are positioned such that light rays diffracted through each area are cancelled out in a darkened area between them. This creates a pattern of dark and bright areas which can be used to clearly delineate features of a pattern defined by the opaque layer on the semiconductor wafer. Another method of constructing a phase shifting mask utilizes a semitransparent layer to cause the phase shift.
One process for fabricating phase shifting masks uses a voting technique to fabricate a defect-free printing mask. The process includes forming an opaque layer on a major surface of a transparent substrate, patterning the opaque layer to expose portions of the underlying transparent substrate, forming a phase shifting mask layer to expose the portions of the underlying transparent substrate, phase-etching partway into the exposed portions of the transparent substrate by an amount equivalent to a preselected phase shift angle, and voting the phase shifting mask layer to accomplish the phase-etching in a series of steps, each equal to the phase shift angle, until a full 180.degree. phase shift is accomplished.
Other processes of fabricating phase shifting masks include those in which a transparent film is formed over a portion of a mask to create a phase shifting layer as well as the etching of phase shifting channels into the mask substrate.
Another method that has been developed to produce masks for use in the fabrication of semiconductors containing small features is optical proximity effect correction ("OPC"). In this method, changes are made to the binary mask layout so that it will print more clearly. Because of the limited resolution of current photolithographic tools (i.e., steppers), patterns defined on the photomask are transferred into the resist on the wafer with some distortions referred to as optical proximity effects. The main consequences in term of line width control are: comer rounding, difference between isolated and semi-isolated or dense patterns, lack of CD linearity where small features print even smaller than their expected size compared to large features and line end shortening where the length of a line having a small line width becomes smaller than its expected size. Moreover, optical proximity effects are convoluted with subsequent processing step distortions like resist processing, including dry etch and wet etch proximity effects.
In order to achieve a sufficient line width control at the wafer level, the mask designs are corrected for proximity effects, namely re-entrant and outside serifs are used to correct rounding and the edges of patterns are moved to correct line width errors.
Because of their complexity, mask designs are usually generated on a computer and stored in a large data file. As the number of features on a chip has increased, the size of these data files has increased. This has produced files that are so large that they have become cumbersome to work with. One process that has been used to reduce the size of the data file and improve its manageability is to divide the layout into a number of smaller units or cells which can be arranged in a hierarchical format. However, when it is necessary to make changes in the layout, the hierarchical structure must be expanded into planar form for the changes to be made and incorporated into the design. This has proven to be an unwieldy and time consuming process.
Accordingly, it would be significant advancement in the art to provide a process for correcting a hierarchical mask layout in which changes could be made efficiently at sublevels in the hierarchical structure without flattening the entire layout. Such a process is disclosed and claimed herein.

Process for modifying a hierarchical mask layout