A phase detection system for providing a phase signal indicative of a phase difference between first and second input signals, with the system including a pair of amplification channels for receiving the input signals, with each channel including a plurality of amplifier stages. The outputs of the two amplification channels are connected to the inputs of a multiplier arrangement, with the arrangement producing an uncompensated phase signal. Compensation circuitry is provided to receive a magnitude signal indicative of the relative magnitudes of the two input signals, with the magnitude signal being used to produce a corrected phase signal indicative of the phase difference between the two input signals.

1. Field of the Invention
The present invention relates generally to phase measurement circuitry and in particular to phase detection circuitry capable of accommodating signal inputs of widely varying amplitudes while maintaining relatively low power consumption.
2. Description of Related Art
Phase detection circuitry has a wide range of applications. FIG. 1 shows two input sinusoidal signals IN1 and IN2 of the same frequency but differing in phase. The two signals IN1 and IN2 can be respectively expressed as A1*sin(ω0t+φ1) and A2*sin(ω0t+φ2), respectively. Assuming that IN2 is leading IN1, the phase difference Δφ is defined as being equal to φ2−φ1. FIG. 2 is a prior art circuit of a standard multiplier 15 sometimes referred to as a Gilbert multiplier. If the two signals IN1 and IN2 are relatively large in magnitude as compared to the thermal voltages VT of the transistors of the FIG. 2 Gilbert multiplier, the input signals operate to completely turn ON or turn OFF the transistors. In that event, the multiplier 15 operates as a phase detector, with the differential output signal Out switching between +(IEE*RC) and −(IEE*RC) depending upon the phase relationship between the inputs.
The above is illustrated by reference to the timing diagram of FIG. 3. When the two input signals IN1 and IN2 have relatively large magnitudes as compared to VT, the signals can be approximately represented as digital signals as shown in FIG. 3. Multiplier 15 can be considered to operate in a manner similar to an exclusive NOR circuit. If the inputs IN1 and IN2 differ, then signal Out is low, otherwise the output is high. As can be seen, signal IN2 leads signal IN1 in phase by a phase difference of Δφ as also shown in FIG. 1. During the period corresponding to Δφ when IN1 is low and IN2 is high, all of the IEE current is flowing through one of the resistors RC to produce a minimum value of signal Out having an associated area A1. As also indicated, when both signals IN1 and IN2 are high during the remaining portion of the half cycle π, signal Out is at a maximum value and has an associated area A2.
Inspection of the FIG. 3 plot indicates that the average value of signal Out for the range 0≦Δφ≦π is as follows:Vavg=(A2−A1)/π
Taking into consideration of the actual voltages produced at the output of the multiplier, for this same range of 0≦Δφ≦π, the average voltage can also be expressed as follows:
                                                                                Vavg                  =                                                                                V                        MULT                                                                                [                                                                                (                                                              π                                -                                                                  Δ                                                                                φ                                                                                )                                                        /                            π                                                    -                                                      (                                                          Δ                                                                                φ                                /                                π                                                                                )                                                                          ]                                                                                or                                                                                =                                                                                V                      MULT                                                                                [                                              1                        -                                                                              (                                                          2                                                            Δ                                                                                φ                                                        )                                                    /                          π                                                                    ]                                                                                with                                                              the                                                              symbol                                                                                V              MULT                                                  [              …              ]                                                                                indicating                                                              that                                                              the                                                              average                                                                    value                                                              is                                                              a                                                              function                                                              of                                                              the                                                              terms                                                              within                                                              the                                                                          brackets            .                                              (        1        )
The average value of signal Out for the range −π≦Δφ≦0 is as follows:Vavg=(A2−A1)/π=VMULT[(π+Δφ)/π+(Δφ/π)]orVavg=VMULT[1+(2Δφ)/π]  (2)
A low pass filter is used to obtain Vavg, the average multiplier output signal, with Vavg being a direct measure of the phase difference Δφ between IN1 and IN2.
FIG. 4 illustrates an ideal phase detector output signal 22 after low pass filtering. The reference point is for signal IN1 having a phase φ1 of 0° with the phase φ2 of signal IN2 varying from −175° to +175°. The detector output signal is at a maximum value 22A of 621.6 mV when φ2 is in phase with φ1 and drops down in a linear fashion to about −0.59 at 22B for −175° and at 22C for +175°.
FIG. 5 depicts a conventional phase detector for detecting a phase difference between sinusoidal inputs IN1 and IN2. Two amplification channels A and B are provided, with each channel having N number of separate differential gain stages. The gain stages function to ensure that the input voltages to the multiplier M1 are sufficiently large. The detector output is theoretically independent of any variations in the magnitudes of inputs IN1 and IN2. A low pass filter F1 is provided to provide the average multiplier output and to remove the ripple at 2× the input frequency. The typical prior art phase detector further includes amplitude mismatch circuitry 24 for measuring the magnitude ratio or gain between the two input signals IN1 and IN2 which has an application generally unrelated to carrying out the phase detection function.
Ideally, the two amplifier channels A and B introduce a small and but equal delay into each channel so that no phase errors are introduced. In order to minimize amplitude dispersion and a resulting phase error, the amplifier stages of each channel must have a very high bandwidth. In order to obtain a phase accuracy of around 1° to 2°, a gain stage bandwidth of 16× to 32× of the maximum input frequency is needed. However, such wide bandwidth requires a lot of power, a big drawback in mobile and other low power applications.
There is a need for an accurate phase detector which can be used in low power applications. As will become apparent to those skilled in the art upon a reading of the following Detailed Description of the Invention together with the drawings, the various disclosed embodiments are capable of providing this capability.


A process for suppressing hot electrons in sub half micron MOS devices wherein a gate oxide and a gate electrode are formed on the surface of a silicon substrate and source and drain regions are ion implanted into the silicon substrate using the gate electrode as a mask. The process includes forming a layer of silicon dioxide over the gate electrode and over the source and drain regions of the substrate, and then introducing a barrier layer forming element into the layer of silicon dioxide to form a thin barrier region to hot electrons at the interface between the silicon substrate and the silicon dioxide. In a preferred embodiment of the invention, nitrogen is introduced into the silicon dioxide by heating the wafer in a rapid thermal processor and in the presence of a nitrogen containing gas at an elevated temperature for a predetermined time. The nitrogen containing gas may be selected from the group consisting of nitrogen trifluoride, ammonia and nitrous oxide. In an alternative embodiment of the invention, fluorine atoms are introduced into the silicon substrate either as the sole barrier layer forming element (silicon fluoride) or prior to the formation of the thin silicon nitride region. The fluorine atoms form good strong silicon-fluorine bonds in the silicon substrate and thereby further enhance the hot electron suppression. In a third embodiment, nitrogen and fluorine are reacted in a rapid thermal processor to form a composite barrier layer of Si.sub.3 N.sub.4 and SF.

In the manufacture of high density integrated circuits, and particularly when MOS devices therein are scaled down to deep submicron design rules, the problem of hot electron reliability becomes a big concern for device engineers. Hot electron reliability refers to a condition where electrons/hole pairs are generated in a silicon substrate of an MOS transistor as a result of the high electrical fields produced between the gate electrode and the substrate at the edge of the source and drain regions. After generation, these hot electrons move swiftly toward the oxide-silicon interface and gain enough energy to surmount the silicon-silicon dioxide barrier and get trapped into the oxide. This entrapment in turn causes an increase of threshold voltage over time, thereby resulting in a significant long term reliability problem.
One of the techniques used to reduce the maximum vertical electrical field at the edge of gate electrode is to create a so-called gate bird beak region by the re-oxidation of the polysilicon gate and the adjacent source and drain regions of the MOS transistor. This process reduces the maximum vertical electrical field under the gate edge, and in addition, it reduces the gate-to-drain overlap capacitance. However, the gate bird beak encroachment can degrade the transconductance of submicron MOS devices and impact upon their subthreshold swing/threshold voltage.

Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection


A process for producing rose oil comprising a preliminary enzymatic treatment of the vegetable feedstock--fresh rose flowers or wastes from rose extraction in an aqueous medium at a ratio between the feedstock and water of 1:1.5-3.0 respectively at a temperature ranging from 40.degree. to 45.degree. C. and a natural pH of the feedstock with water for 2 to 4 hours using enzymatic preparations comprising products of biosynthesis of microorganisms of genus Trichoderma or Geotrichum and containing active beta-glucoside-hydrolases specific in respect of rose glycosides and enzymes hydrolyzing structural polysaccharides of plants, taken separately or in combination in an amount of from 0.1 to 0.5% by weight of the starting feedstock; then the treated vegetable feedstock is subjected to hydrodistillation and the desired product is recovered from the resulting hydrodistillate.

Currently, two basic ways are known of improving the process for recovery of rose oil from the vegetable feedstock, namely: thermal fermentation of the feedstock based on the effect of proper enzymes of rose plants, and the use of cultures of microorganisms. However, both groups of processes feature a number of essential disadvantages and do not enable a sufficiently complete recovery of the final product with high quality characteristics.
A process is known in the art for producing rose oil by way of thermal incubation of the vegetable feedstock, such as rose flowers based on the effect of proper enzymes of the plant (autofermentation). The starting stock is combined with a 15% solution of NaCl or water in a ratio of the feedstock:water of 1:2.5 respectively and maintained at the temperature of 45.degree. C. for 4 to 6 hours or at a temperature of from 22.degree. to 27.degree. C. for 6 to 48 hours. The recovery of rose oil is effected by hydrodistillation for 6-7 hours, followed by adsorption of the oil in a column with activated carbon and desorption with ethyl ether. (Cf. "Essential-Oil Industry of Georgian SSR", Tbilisi, 1968; "Applied Biochemistry and Microbiology", vol. XII, issue 5, 1976 /in Russian/).
The technique employed is rather simple, though possessing such disadvantages as a low yield of oil (0.06-0.013%) and a poor quality of the final product. The content of monoterpene alcohols--the most valuable components--is only 8.5 to 12.0%, the content of .beta.-phenylethyl alcohol--the less valuable component--is as high as 85-90%.
Also known in the art is a process for producing rose oil based on the effect of enzymes of plants (rose flowers) under anaerobic conditions without the addition of water. The process of pre-treatment of the feedstock is effected in hermetically sealed polyethylene bags at room temperature for 48 hours. The subsequent operations comprise treatment of the material with petroleum ether in extraction columns at room temperature and recovery of absolute ethereal rose oil.
The yield of rose oil produced in this manner is at the level of 0.03% by weight of the starting feedstock. Quality of the oil in respect of terpene alcohols and .beta.-phenylethyl alcohol is higher than that of rose oil produced by way of a thermal incubation with a subsequent hydrodistillation.
Therefore, this prior art process features a very low yield of rose oil and instability of the process conditions. Furthermore, the process also features certain technological difficulties such as the necessity of creating anaerobic conditions for enzymes, i.e. collect the starting feedstock and hermetically seal polyethylene bags directly at the plantations. All this is associated with large additional expenses for the materials and equipment. This process does not enjoy a commercial implementation (USSR Inventor's Certificate No. 478057, Cl. Int. C 11 B 9/02, published July 25, 1975, Bulletin No. 27).
A microbiological process is also known in the art for the production of rose oil involving a preliminary treatment of the rose stock by means of cultures of special strains of microorganisms of the genus Aspergillus, Licoperdon, Monilla, Saccharomyces. As the starting stock use is made of the waste products resulting from hydrodistillation; the process is conducted at a temperature within the range of from 25.degree. to 40.degree. C. and the pH value of 4.5 for 26 hours.
The recovery of rose oil from the wastes is effected by a repeated hydrodistillation, followed by adsorption and desorption of the oil and distilling-off of the solvent.
The process makes it possible to recover an additional amount of rose oil (about 0.02% by weight of the starting stock) from the waste products (cf. Bulgarian Pat. No. 15312, published June 25, 1971).
This process, however, features but a low yield and poor quality of the desired product. Moreover, the process has certain difficulties such as the necessity of preparation of the inoculation culture of fungi under the conditions of the rose oil manufacture, additional expenses for the preparation of the feedstock-dehydration of the waste products, as well as process instability and long duration.
This process does not enable the production of rose oil having standard quality.

mikroraion Kapotnya, kvartal 4, dom 3, kv. 34

Nagatinskaya naberezhnaya, 22, korpus 2, kv. 192


An electrical connector of the type having a housing with terminals extending from apertures thereof, is sealed at the aperture entrances around the extending terminal portions. The sealant material is polymerized of a major proportion of at least one vinyl ester resin, a minor proportion of at least one polymerizable acrylic diluent monomer and a polymerization activation system comprising from about 0.025% to about 17% by weight of the resin, by being exposed to actinic radiation selected to activate the system. The polymerized material excludes solder and solvents from the aperture entrances.

Various sealant compositions have been used to seal electrical connectors and protect the terminals within the connectors particularly when the connectors must be soldered to a substrate. Typically the procedures for mounting components to a substrate involve exposure to fluxes, solder, defluxing agents and cleaning agents. It is important that the chemicals and especially solder used during these processes do not migrate or wick into the connector housing, damage the terminals, and prevent the connector from being mated with a corresponding connector. With the increased use of miniaturized and closely spaced terminals it is especially important to prevent wicking of solder into the terminals. Even a minute amount of solder in terminals having a contact opening with a diameter on the order of 0.025 inches will prevent the terminal from proper electrical engagement when the connector is mated with a corresponding connector. Electro-optic devices and components of connectors, such as filters, and the like, frequently require sealants in the form of coatings and adhesives.
It is known to the art to seal connectors using anaerobic acrylate adhesives, epoxy resin adhesives, and cyanoacrylate adhesives. There are problems associated with using these sealants in sealed connectors owing to lack of heat resistance at elevated soldering temperatures and lack of resistance to cleaning chemicals.
It is an object of this invention to provide a sealant which is hydrophobic, will withstand soldering procedures and the elevated temperatures involved therein and is resistant to corrosive cleaning solvents.
It is an additional object of the invention to provide a sealant for repairing and sealing electrical connector housings, components of connectors, and electro-optic devices, for filling joint gaps and also especially apertures around terminals and strengthening thereat the housing, components and devices against physical stresses.
It is also an object of this invention to provide a solder resistant sealant for use with electrical devices, such as filters and the like, having a plurality of isolated conductive areas thereon wherein one or more of the conductive areas must be soldered to other conductive areas.
Furthermore, it is an object of the invention to provide a solder and chemical resistant sealant for selected locations or areas of electrical devices that will protect and seal those locations during the life of the device.
In addition, it is an object of the invention to provide a cost effective means for sealing electrical components that is also usable in automated manufacturing systems.
It is a further object of the invention to provide a sealant which is curable by actinic radiation, particularly ultraviolet and visible light, or heat.
In addition, it is an object of the invention to provide a sealant which has a dual curing system specifically designed for combined photocuring and heat curing.
It is also an object of the invention to provide a sealant which will adhere well to plastics, metals, glass, and semiconductors such as ferrites and titanates.
Still further, it is an object of the invention to provide a process for sealing electrical connectors, components of connectors, and electro-optic devices.
Additionally, it is an object of this invention to provide a process to seal, repair and structurally reinforce foraminous electrical and electro-optical connectors.

Method of sealing electrical connectors using a broad spectrum light and heat curable composition


Apparatus for displaying packaged collectables in a supportive and protective frame. A rear frame member is secured inside a front frame member with a latch. The front frame member has sidewalls that enclose the rear frame member. In one embodiment the latch relies upon magnetic coupling between the front and rear frame members. In another embodiment the latch includes a tab engaging a slot and at least one detent capturing the rear frame member inside the sidewalls of the front frame member. The front frame member has an opening to allow the protrusion of a blister if the collectable has a blister package. The rear frame member has a transparent pane or portion. The collectable is visible from the front and back of the frame. The front and rear frame members are separable by manipulating the rear frame member through at least one notch in the front frame member.

1. Field of Invention
This invention pertains to display cases for collectables. More particularly, this invention pertains to frames and cases that display items that remain in their original packaging.
2. Description of the Related Art
Frames are widely available in a wide assortment of shapes, sizes, styles, and colors for displaying pictures, paintings, drawings, and works of art. Picture frames, for example, are available and generally have a rectangular configuration with an open or transparent front through which the picture is visible and protected. Such frames are suited for displaying flat, planar objects, such as a painting or photograph. Many such picture frames allow viewing only from the front of the frame and are not intended to be picked up and handled so that the picture can be viewed from the back side.
Various frames and display devices are known. For example, United States Patent Application Number 2009/0100732, naming inventor Stewart Seidler, published on Apr. 23, 2009, and titled, "Magnetic display device," discloses a display case having external magnets for combining multiple frames into a modular display device album. United States Patent Application Number 2012/0285060, naming inventor Raoul Gross, published on Nov. 15, 2012, and titled, "Picture frames," discloses picture frames with flexible borders that can be coupled together in a variety of configurations. Like the Seidler patent application, the Gross patent application discloses magnets to couple one picture frame to another.
United States Patent Application Number 2009/0121109, naming inventor Richard C. Kinmont, published May 14, 2009, and titled, "Display stand for action figure," discloses one method for displaying an action figure or collectable on a lighted, table-top stand. The collectable is removed from its packaging for display, which subjects the collectable to damage and soiling from handling.
United States Patent Application Number 2007/0087651, naming inventor Aneel Ali, published Apr. 19, 2007, and titled, "Action figure stands," also discloses a way to display action figures or collectables. The stand described in the Ali application has a support that attaches to the figure and to the stand, thereby securing the figure to the stand and making it more stable. As with the above application, the collectable is removed from its packaging for display, which subjects the collectable to damage and soiling from handling.
U.S. Pat. No. 4,258,488, issued to Schienbein on Mar. 31, 1981, and titled, "Phonograph record album display frame," discloses a frame with an opening that receives an album cover. The album cover is positioned inside the opening with the bottom of the album cover resting in a groove or between bosses in the bottom of the opening with the album cover tilted back and resting against an inside surface of the frame. The display frame allows only the front, exposed surface of the album cover to be viewed without removing the album cover from the display frame.
Another type of display device for a phonograph album is disclosed in U.S. Pat. No. 6,070,721, issued to Levitan on Jun. 6, 2000, and titled "Display case for phonograph album and record." The '721 patent discloses a shallow rectangular open topped base tray with a hinged transparent cover that latches in position. The tray includes a support post that secures the record outside the album cover such that a portion of the record is visible along with the album cover.


A light-sensitive image recording material comprising, as a self-supporting film or in one or more layers on a support, at least. (a) a heat sensitive coloring element comprising at least one polyvinyl pyridine and at least one polyvinylidene halide, and PA1 (b) a light sensitizing element comprising at least one of PA1 (1) imagewise exposing to actinic radiation the light-sensitive image recording material described above, and PA1 (2) uniformly heating the imagewise exposed light-sensitive image recording material to a temperature of about 100.degree. C. to about 200.degree. C.. (1) a compound which, on exposure to actinic radiation, is capable of complexing the polyvinyl pyridine of element (a) or is capable of forming a quaternary salt with the polyvinyl pyridine of element (a), or PA2 (2) a compound which, on exposure to actinic radiation, is capable of releasing a precursor which is capable of complexing the polyvinyl pyridine of element (a) or is capable of forming a quaternary salt with the polyvinyl pyridine of element (a) under heating,. and a dry process for recording a light image comprising

1. Field of the Invention
The present invention relates to light-sensitive image recording materials and particularly, to those which utilize an intermolecular reaction which occurs between two kinds of polymers. More specifically, it relates to dry processes for recording light images using such recording materials.
2. Description of the Prior Art
In the past silver halide light-sensitive materials, diazo light-sensitive materials and the like have been mainly employed as light-sensitive image recording (photographic) materials. However, these materials require exclusively a wet development processing. Numerous attempts to record images using dry processing, for instance, by heat development, have been made in recent years for the purpose of elimination of the disadvantages inherent in wet development processes. For instance, materials such as heat developable light-sensitive materials [one example of which is commercially available under the tradename of "Dry Silver" (produced by 3M Co.)] utilizing a silver salt of a fatty acid, heat developable diazo light-sensitive materials, light-sensitive materials utilizing organic tellurium compounds (as disclosed in, for example, British Pat. No. 1,405,628) and so on have been developed. These light-sensitive materials, unfortunately, have their own defects. Namely, materials using silver salts of fatty acids are expensive because silver is employed therein and a large amount of skill is required to prepare such a light-sensitive material. Toxicity is a problem in light-sensitive materials containing organic tellurium compounds since they are toxic, and heat developable diazo light-sensitive materials tend to fog upon storage and are unstable.
On the other hand, it is known that halogen-containing high polymers such as polyvinyl chloride, polyvinylidene chloride and the like undergo a dehydrohalogenation due to the interaction of light or heat to produce conjugated polyenes and thereby, a color is formed. A number of studies have been made on this reaction mainly from the standpoint of stabilization of halogen-containing high polymers, and recent results of this research are summarized in G. Ayrey, B. C. Head and R. C. Poller, "Macromolecular Reviews", J. Polymer Sci: Macromolecular Reviews, volume 8, page 1 (1974). Light-sensitive image recording materials taking advantage of the lability of halogen-containing high polymers and particularly, the property that they can be changed to polyenes and thereby, become colored, were proposed in Japanese Patent Publications Nos. 10647/75 and 35451/76; U.S. Pat. Nos. 3,615,456; 2,772,159; 3,046,136; 3,155,513; 2,712,996 and 2,754,210; and S. B. Elliot, Photographic Eng., volume 4, page 133 (1953). In each of these light-sensitive image recording materials, polyene images are produced by employing materials which are capable of accelerating the dehydrohalogenation reaction which halogen-containing high polymers undergo due to the interaction of light (e.g., metallic oxides) with the halogen-containing high polymers, exposing the recording materials to light and optionally, by heating. Since light-sensitive image recording materials of this kind primarily utilize, however, the lability of halogen-containing high polymers, achieving a stabilization of the light-sensitive materials and an increase in sensitivity to light simultaneously has been regarded as technically difficult if not technically opposed.
Now, in a prior application we discovered that heat-sensitive coloring compositions comprising solid mixtures of basic polymers, such as polyvinyl pyridines, and halogen-containing high polymers, such as polyvinylidene halides, were colored brownish-black by heating, as disclosed in Japanese Patent Application No. 16369/77 (corresponding to U.S. patent application Ser. No. 878,351, filed Feb. 16, 1978).
It was found therein that coloration was not observed in practice when only polyvinylidene halides were heated (e.g., at a temperature of 100.degree. to 200.degree. C.). Accordingly, it was thought that the thermal coloration of the above-described solid mixtures in part involved an intermolecular reaction between different polymers (presumably corresponding to an acceleration of the dehydrohalogenation reaction of polyvinylidene halides by capture of hydrogen halides using the polyvinyl pyridines).
Therefore, the above-described heat sensitive coloring compositions are quite stable at temperatures in the vicinity of room temperature (25.degree. C.), and can be stored for a long time without fogging occurring. On the other hand, coloration can proceed with a practically sufficient speed only after affirmative heating (up to, for instance, a temperature higher than the glass transition points of the polyvinyl pyridines used).
Moreover, the thus produced colored materials are considered to be composed of "polyenes", as such are defined in Japanese Patent Application No. 16369/77, and the colored materials are quite stable to external stimuli such as light, heat, moisture and so on.

Light-sensitive image recording material and dry process for recording light image using the same


An optical fiber preform manufacturing apparatus which continuously monitors the weight of a preform during manufacturing by a load cell without increasing the offset amount of the preform. The preform manufacturing apparatus includes a rotary chuck unit vertically moved by an elevating unit and a rod gripped by the rotary chuck unit and vertically extending downward. At the time of manufacturing a preform, the elevating unit and the rotary chuck unit are driven to rotate and move a starting rod suspended from the lower end of the rod upward. A support plate is fixed to the rotary chuck unit. Three or more load cells are arranged between the support plate and an elevating plate of the elevating unit. The rotary chuck unit is firmly supported by these load cells, so that the rotating shaft is not inclined. A hole is formed in the elevating plate, and the rotary chuck unit extends through the hole with a gap therebetween. A load by the support plate, the rotary chuck unit, the seed rod, a starting rod and the preform acts on the load cells. Therefore, the weight of the preform can be detected from an output from the load cells.

1. Field of the Invention
The present invention relates to an apparatus and method of manufacturing an optical fiber preform and, more particularly, to a means for detecting the weight of a rotatably supported preform during rotation of the preform.
2. Related Background Art
As a conventional method of manufacturing an optical fiber preform, a VAD (Vapor Axial Deposition) method or an OVD (Outside Vapor Deposition) method is generally known. In the VAD or OVD method, fuel gases such as H.sub.2 and O.sub.2 and material gases such as SiCl.sub.4 and GeCl.sub.4 are supplied to a burner in a reaction vessel, and these gases are burned to generate fine particles of SiO.sub.2 and GeO.sub.2. Then, the fine glass particles are deposited on a rotating target.
A target used in the VAD method is a preform itself grown from the distal end of a starting rod. In the OVD method, a preform grown on a core rod and in the periphery thereof is used as a target. In the VAD method, the preform is gradually fed in the axial direction to grow the preform in the axial direction. The OVD method is different from the VAD method in that the preform and the burner are relatively moved to grow the preform in the radial direction. In the VAD method, normally, the preform is vertically arranged, and the starting rod is vertically pulled upward, thereby growing the preform. Also in the OVD method, the preform is sometimes grown in a vertically arranged state.
In the VAD or OVD method, normally, the growth state of the preform is continuously monitored and fed back to parameters for changing the growth rate, e.g., the flow rates of the fuel and source gases supplied to the burner, the pull-up speed of the preform, and the exhaust rate of the reaction vessel.
As a method of monitoring the growth rate of a preform, a preform growth point monitor by a laser is normally used. However, a method of monitoring the weight of a preform is disclosed in Japanese Patent Laid Open No. 59-45936.
FIG. 1 is a view showing a conventional apparatus for manufacturing an optical fiber preform as disclosed in Japanese Patent Laid Open No. 59-45936. The apparatus shown in FIG. 1 uses the VAD method to manufacture a preform and can monitor the weight of the preform. In this apparatus, a seed rod 1 is supported by a chuck 3 through a load cell 2. The lower portion of the seed rod 1 extends into a reaction vessel 4. In the reaction vessel 4, the upper end of a starting rod 5 is connected to the lower end of the seed rod 1. A preform 6 is grown from the lower end of the starting rod 5 in the vertical direction, i.e., in the axial direction of the starting rod 5. The load cell 2 is used to measure the weight of the preform 6.
The chuck 3 is attached to an elevating unit (not shown) and can be vertically moved. The chuck 3 is rotatably supported and connected to a motor (not shown). Therefore, the seed rod 1, the load cell 2, the starting rod 5, and the preform 6, all of which are suspended from the chuck 3, can be rotated and vertically moved. The load cell 2 outputs a signal corresponding to the weight of the growing preform 6 to a controller 7. The controller 7 sends the signal representing the weight of the preform to mass flow controllers 8 to 11, thereby adjusting the flow rates of H.sub.2 and O.sub.2 to a burner 12, and at the same time adjusting the flow rate of Ar as a carrier gas for bubbling SiCl.sub.4 and GeCl.sub.4 gases, i.e., adjusting the flow rates of the SiCl.sub.4 and GeCl.sub.4 gases to the burner 12. The controller 7 can also adjust the degree of opening of an exhaust valve 14 provided in an exhaust pipe 13 of the reaction vessel 4, thereby adjusting the exhaust amount.
In the above-described conventional preform manufacturing apparatus, the growth state of the preform 6 can be continuously monitored by detecting the weight of the preform by the load cell 2. However, the flexural rigidity of the load cell 2, i.e., the rigidity against a force in the radial direction, is relatively low. For this reason, in the above arrangement in which the load cell 2 is rotated together with the seed rod 1 and the preform 6, the distal end of the preform 6 tends to offset from the original rotation axis of the seed rod 1 during rotation.
Since the normal growth rate of the preform 6 is several grams per minute, sensitivity of the load cell adapted for this order is required. To realize this sensitivity, the sensor portion of the load cell 2 must have a low flexural rigidity to detect a very small amount. Additionally, to prevent a measurement error due to friction, the seed rod 1 cannot be restrained in the radial direction. Therefore, the above-described conventional apparatus has a structure easily affected by offset of the preform 6. Offset of the preform 6 causes an eccentric growth. As a result, when an optical fiber is finally manufactured from such a preform, the optical fiber core may undesirably become eccentric, or non-circularity of the fiber is generated.
In addition, in the above-described apparatus, a signal from the load cell 2 must be extracted using a slip ring (not shown) serving as a movable contact. This tends to cause noise inclusion in the signal.

Optical fiber preform manufacturing apparatus which measures a vertical load with three cells


A vehicle state indication system includes a detection system and a light indicator. The detection system is configured to sense an external moving object. The light indicator includes a first on mode and second on mode, and being disposed on a vehicle so as to be capable of selectively externally indicating a first state of the vehicle and a second state of the vehicle in a direction of the external moving object detected.

Field of the Invention
The present invention generally relates to a vehicle state indication system. More specifically, the present invention relates to a vehicle state indication system that indicates the state or intent of a vehicle to an external observer, such a pedestrian or remote vehicle.
Background Information
Conventional vehicle state indication systems include indication systems that attempt to advise external observers of the intent of the driver of a vehicle. For example, many vehicles include brake lights to indicate the braking status of a vehicle and turn signal indicators to indicate the intent of the vehicle to turn a specific direction.
Additional systems can include a system that rearwardly indicates the vehicle intent to remote vehicles positioned rearward of the vehicle. For example, these conventional systems may indicate via text that the vehicle is in a stopped state or in a slow forward state.
Other conventional systems can include an external light indicating the direction that pedestrians are detected by a perception system. The lights move around the vehicle as the pedestrians move. Interior lighting indicates where pedestrians are detected, for passengers inside the vehicle. Messages on outside of the car tell pedestrians to "please walk" or "stop".

This patent is subject to a terminal disclaimer.


A method of enabling at least one application (22) stored in a radiocommunications terminal (10) to access functions of said terminal (10), the terminal (10) being suitable for enabling data to be exchanged in both directions in application of a data standard implementing a transfer channel that conveys so-called “AT” commands, the terminal (10) including an AT command manager (15), the method being characterized in that access from the stored application (22) to the terminal (10) takes place by exchanging AT commands via the AT command manager (15).

1. Field of the Invention
The present invention relates to a method of enabling at least one application stored in a radiocommunications terminal to access functions of the terminal. The invention also relates to a radiocommunications terminal implementing the method.
2. Discussion of the Related Art
A non-exclusive field of application of the invention is that of radiocommunications terminals operating in a cellular radiocommunications network. The invention applies in particular to a system implementing the global system for mobile communications (GSM).
A mobile radiocommunications terminal may include stored applications. These applications can then implement data exchanges between the radiocommunications terminal and the network. An application exchanges data via the software interface of the terminal that is known as the application programming interface (API).
Furthermore, data exchanges between two pieces of data processing terminal equipment, e.g. between a radiocommunications terminal and a conventional portable terminal of the portable microcomputer type, can take place only with so-called AT commands being exchanged between the two terminals via a modem. These AT commands are described in the GSM standards.
AT commands are thus dedicated to configuring and controlling modems.
Until now, AT commands have never been used in an application context, i.e. when the user of a radiocommunications terminal seeks to make use of applications situated in the terminal.

Method for enabling an application recorded in a radiocommunication terminal to access functions of the terminal and terminal implementing said method


A vehicle communication system is disclosed, which includes a voice output device for voice output, a voice pick-up device for voice input, a packet assembler/disassembler unit adapted for assembling different vehicle supplementary system data into respective packet data or disassembling demodulated packet data into corresponding vehicle supplementary system data, a GSM module adapted for transmitting data-carrying voice signal to a remote side or receiving data-carrying voice signal from a remote side, a carrier wave modulator circuit adapted for modulating packet data into analog signal and adding the modulated analog signal to the voice signal from the voice pick-up device to form a data-carrying voice signal for transmitting to a remote side through the GSM module, and a demodulator circuit adapted for demodulating data-carrying voice signal and discriminating the signal into packet data and voice signal.

1. Field of the Invention
The present invention relates to a communication system and, more particularly, to a vehicle communication system.
2. Description of Related Art
FIG. 1 illustrates the voice signal transmitting and receiving operation of a conventional GSM module 31. Voice Signal is transmitted and received through the GSM module 31. FIG. 2 illustrates the data signal transmitting and receiving operation of a conventional GSM module 32. Data signal is transmitted and received through the GSM module 32. A conventional GSM module 31 can be used to transmit or receive voice signal as well as data signal, however it cannot transmit or receive voice signal and data signal at the same time, i.e., when transmitting or receiving data signal, the GSM module 31 is prohibited from transmitting or receiving data signal. When wishing to transmit voice signal and data signal, two separate phone calls are needed to achieve transmission of voice signal and data signal separately.
Therefore, it is desirable to provide a vehicle communication system that eliminates the aforesaid drawbacks.

Vehicle communication system capable of transmitting and receiving a data-carrying voice signal


A transdermal delivery system for the modulated administration of drugs is described. The drug delivery device comprises a backing; a drug reservoir containing the drug, a plasticizer-type enhancer, a solvent-type enhancer, and optionally, a gelling agent; a non-rate-controlling membrane; and an adhesive layer containing a plasticizer-type enhancer. This drug delivery system is particularly useful for the administration of tolerance-inducing drugs, for example, vasodilators, such as isosorbide dinitrate.

1. Field of the Invention
This invention relates to the transdermal delivery of drugs. More specifically, a transdermal drug delivery system is utilized to deliver a therapeutically effective amount of a drug, via a modulated drug delivery profile, through the skin of a patient in need of such treatment. This device is particularly suitable for the delivery of tolerance-inducing drugs.
2. Description of the Background Art
Delivery of drugs by the transdermal route has been known to be theoretically possible for many years. The earliest patented transdermal devices were medicated bandages, usually with the drug mixed into the adhesive, that were designed to deliver a specific quantity of drug to a defined area of skin for a specific time. Such devices usually did not control the rate at which the drug was released. Since the 1970's interest in using the transdermal route for controlled release therapy has grown substantially.
Controlled release transdermal devices rely for their effect on the delivery of a known flux of drug to the skin for a prolonged period of time, generally a day, several days, or a week. The patch design influences and, to a certain extent, regulates the flux of drug. In one standard patch design, the drug is contained in a reservoir, with one or more layers separating the reservoir from the skin of the wearer. Typically, these layers are a synthetic membrane and an adhesive. The drug diffuses through these layers to the skin. In another common patch design, the drug is dissolved or suspended in a polymer or adhesive matrix which is in direct contact with the skin of the wearer. In this case, the drug diffuses from the matrix into the skin.
The skin is an effective barrier against the majority of drugs. Unless the delivery device is made unacceptably large, or the natural skin permeation rate of the drug is somehow increased by the use of enhancers, then the drug flux across the skin is generally inadequate for useful therapy. Thus, although in theory any drug might be delivered by this route, serious investigation of candidate drugs has been limited to those few that exhibit suitable properties, namely: small molecular size; short half-life; extensive and rapid liver metabolization, thus rendering oral administration difficult; high in vivo skin permeability; and small effective therapeutic dose, etc.
The delivery of drugs through the skin provides many advantages; primarily, such a means of delivery is a comfortable, convenient and noninvasive way of administering drugs. The variable rates of absorption and metabolism encountered in oral treatment are avoided, and other inherent inconveniences, e.g., gastrointestinal irritation and the like, are eliminated as well. Transdermal drug delivery also makes possible a high degree of control over blood concentrations of any particular drug.
The vast majority of transdermal systems are designed so as to deliver a drug continuously throughout the wearing period. For many drugs, however, continuous delivery poses the potential problem of tolerance. For such drugs, a continuous delivery patch must be removed periodically during the wearing period so as to prevent development of tolerance. The inconvenience of periodic patch removal can in turn create problems with patient compliance and thus with drug efficacy as well.
To date, it has been difficult to transdermally deliver tolerance-inducing drugs in therapeutically effective profiles. It is therefore desirable to provide improved devices and approaches which avoid the disadvantages of these conventional devices and methods while providing an effective means for delivering tolerance-inducing drugs.

Transdermal delivery systems for the modulated administration of drugs


The present invention provides a surface acoustic wave sensor capable of suitably controlling the flow of a liquid sample onto IDT electrodes. A surface acoustic wave sensor has a piezoelectric substrate, a first IDT electrode and a second IDT electrode which are located on the upper surface of the piezoelectric substrate and are separated from each other while sandwiching a detection part on the piezoelectric substrate therebetween, and the cover which forms the space being on the first IDT electrode, second IDT electrode, and the detection part and straddling them. On the lower surface of the cover, the detection part-facing surface facing the detection part has a smaller contact angle to the liquid sample than that of a pair of electrode-facing surfaces facing the first IDT electrode and second IDT electrode.

Known in the art is a surface acoustic wave sensor which uses a surface acoustic wave element to measure the property of a liquid sample or ingredients of a liquid sample.
A surface acoustic wave sensor is comprised of a piezoelectric substrate on which is provided a detection part which reacts with an ingredient contained in a liquid sample on. It measures an electric signal based on a surface acoustic wave (SAW) which is propagated through this detection part to there by detect a property or an ingredient of the liquid sample.
A SAW is generated by an IDT electrode comprised of a pair of comb-shaped electrodes which are provided on an upper surface of the piezoelectric substrate. To prevent the IDT electrode from being immersed in the liquid sample, it is known to provide a sealing member which forms a closed space over the IDT electrode (for example, Patent Literature 1).
The sealing member has a partition wall which is supported on the upper surface of the piezoelectric substrate between the IDT electrode and the detection part. Due to this, the flow of the liquid sample onto the IDT electrode is suppressed. In this way, conventionally, the flow of the liquid sample is controlled by a channel wall.
However, the control of the flow of the liquid sample by the channel wall causes various inconveniences. For example, the partition wall which is positioned between the IDT electrode and the detection part becomes a primary factor of propagation loss of the SAW when the SAW is propagated from the IDT electrode to the detection part.
Further, for example, if the liquid sample is allowed to flow onto the IDT electrode and the channel wall is positioned outside the detection part and the IDT electrode, the liquid sample running along the channel wall causes the liquid sample to flow on the IDT electrode prior to on the detection part. As a result, air bubbles were liable to form on the detection part.
Therefore, it has been desired to provide a surface acoustic wave sensor capable of suitably controlling the flow of a liquid sample.


A method and a system for response evaluation of users from electronic documents are disclosed. In an embodiment, one or more questions and a first response pertaining to each of the one or more questions are extracted from one or more first electronic documents. Further, a second response pertaining to each of the one or more extracted questions and metadata are extracted from one or more second electronic documents. For the second response pertaining to each of the one or more extracted questions, a score is determined based on one or more similarity measures that correspond to a category of each of the one or more extracted questions. Thereafter, the response evaluation is rendered on a user interface displayed on a display screen. The response evaluation comprises at least the determined score for the second response pertaining to each of the one or more extracted questions.

Advancements in the field of computer science and information technology have led to the usage of computer assisted assessment (CAA) as one of the popular modes for evaluating responses for one or more questions. Such one or more questions may correspond to various categories. One of such categories of questions corresponds to multiple choice questions (MCQs) for which the responses are from limited choices. Other of such categories of questions corresponds to open-ended questions for which the responses are in free-text.
Typically, for multiple choice questions (MCQs), a user provides constrained responses. Thus, such assessment may not be reliable as the responses may be based on guess work. Further, presence of alternative responses providing inadvertent hints may change nature of problem-solving and reasoning skills of the candidate. Furthermore, acquired knowledge of the candidate may not be appropriately measured due to hypothetical reasoning and self-explanation, specifically in science courses. On the other hand, for open-ended questions, the user may integrate, synthesize, design, and communicate the ideas in natural language. Thus, such free-text responses provided by different users may be different for the same question. The difference in responses may occur due to linguistic variations in responses (i.e., multiple ways of expressing the same response), subjectivity of question (i.e., multiple correct responses) and topical variation (i.e., science vs literature) with respect to various factors, such as, subject matter, level of students, length and type of text. Usually, the CAA technique developed for evaluation of the free-text responses works for certain scenarios (i.e., for certain datasets) without considering the above mentioned variations. Therefore, an improved CAA technique for evaluation of the free-text responses with enhanced quality and accuracy is desirable.
Further limitations and disadvantages of conventional and traditional approaches will become apparent to one of skilled in the art through a comparison of the described systems with some aspects of the present disclosure, as set forth in the remainder of the present application and with reference to the drawings.

Method and system for response evaluation of users from electronic documents


A method and system for video coding by integrating frame data and time data may be described. The method and system can include a video coding non-transitory storage media that integrates reference data and time data. More specifically, the video coding non-transitory storage media can produce one or more luma vectors and one or more chroma vectors within a video plane, the one or more luma vectors and one or more chroma vectors may be extended into time vectors that can be utilized for compression or reconstruction of the frame rate, define luma vector across time as a contiguous function and perform video compression across a time dimension.

Video compression is utilized for the transmission and display of video data over a variety of media. Due to uncompressed video data being too large and requiring too much bandwidth for timely transmission and display, video must be compressed in order to be displayed in real time. The video data may be compressed in any of a variety of manners, and different techniques have been utilized for different platforms.
A known manner of video compression is linear, frame-based video compression. This type of video compression is built on the minimizing the amount of data that is needed to reconstruct successive frames. However, such methodologies are highly dependent on predetermined bit rate and resolution constraints. Other video compression techniques utilize optical flow to estimate motion in video data and compressive sampling to reconstruct signals based on data measured at intervals and data assumptions made at non-measured intervals. Further video compression techniques utilize prediction vectors that go beyond traditional frame data, for example using subpixel reconstruction. However, such techniques are inherently reliant on frame data.
With linear, frame-based video compression, a group of pictures forming video data may be grouped, categorized and transmitted. A typical group of pictures has a structure of IBBPBBP, where I frames are intra-coded data, P frames are predictive data, and B frames are bi-predictive data. In such methods, an I frame may represent full data of a frame and is utilized to predict both P and B frames. The P frame is formed entirely from the I frame and, when interpreted with the I frame, is utilized to predict B frames
This known linear, frame-based video compression methodology, however, has problems. Current linear, frame-based video compression methodology may be problematic if any video sequences need to be edited. Also, the editing may require a lot more computer power to carryout. In an IBBPBBP structure, the fourth frame, a P frame, is needed in order to predict the second and third frames, the B frames. Thus, when the compressed video data is transmitted, the P frame is transmitted before the two B frames and, when the video data is uncompressed, it must be reordered so that the B frames are properly displayed before the P frame. As a result, there is a delay in the transmission, decoding and display of video data compressed in this manner. Additionally, due to the wide variety of viewing platforms and screen resolutions, data transmission speeds, and viewing devices, it is inefficient to utilize existing compression techniques. This may also require a lot of computing power to utilize existing compression techniques which may be computationally intensive.

System and method for non-uniform video coding


A system and method for teaching a user to discriminate and match musical pitch is disclosed. A pitch module generates a first melodic sequence for a user. The pitch module generates at least two symbolically depicted sequences including a first symbolic sequence that represents a pitch frequency that, when played, matches the first melodic sequence. A tracking module receives a selection of the first symbolic sequence and advances to a next level in response to receiving the selection of the first symbolic sequence.

The specification relates to educational techniques. In particular, the specification relates to a system for teaching a user to match and discriminate musical pitch.
The foundation for learning music lies in being able to discriminate and match one musical pitch from another. Once a user masters pitch, the user can learn to read musical notes, compose music and play the music. Though of considerable importance, past efforts at teaching these repertoires have not been approached systematically, particularly for the novice or young learner. For example, teaching instructions were often provided as trial and error exercises that are too complex for young learners to master.

System and method for teaching and testing musical pitch


Examples of techniques for automated attribute propagation and hierarchical consistency checking are disclosed. In one example implementation according to aspects of the present disclosure, a computer-implemented method may include: detecting, by a processor, a non-standard extension during convergence of an integrated circuit logic design; propagating, by the processor, the non-standard extension to each level of a plurality of hierarchies of the integrated circuit design for which a net utilizes a special constraint; and verifying, by the processor, a hierarchy consistency across each level of the plurality of hierarchies.

The present disclosure relates to integrated circuit design and, more particularly, to techniques for automated attribute propagation and hierarchical consistency checking for non-standard extensions.
During checking of an integrated circuit during the design phase of the integrated circuit, hardware defects or failures may be automatically detected. However, some hardware defects or failures may not be automatically detected using existing techniques and instead are only detectable by labor intensive manual review of data. For example, an analog signal wire may be passed through a digital buffer. This type of defect or failure is undetectable by existing automated techniques. Instead, manual check is performed, but this manual process is time-consuming and error-prone and consumes a significant number of man-hours.

Automated attribute propagation and hierarchical consistency checking for non-standard extensions

INTERNATIONAL BUSINESS MACHINES CORPORATION


A heterogeneous edible spread having a water-in-oil composition and a varigate composition is disclosed. The water-in-oil composition and the varigate composition have humectant concentrations that result in each of the compositions having substantially the same water activity, resulting in a spread having superior appearance, taste and texture.

It is often recommended that individuals reduce their intake of fats, particularly saturated fats, in order to remain fit and in good health. Moreover, the reduction of overall caloric intake is of dietary interest in order to prevent obesity, diabetes, heart disease and the like.
Food manufacturers, in response to health and weight concerns of consumers, have attempted to reduce the fat content and calories of various food products, particularly spreads. Such reduced fat and calorie products, unfortunately, are not only difficult to formulate but generally inferior in appearance, taste and texture when compared to conventional high fat and calorie products. Moreover, in order to enhance flavor in nonfat, low-fat and high-fat containing spreads, food manufacturers have combined spices, like cinnamon, with the various products they prepare. The products having enhanced flavoring additives, unfortunately, often have an inferior appearance due to phase separation, bleeding or leaching of the various components combined to enhance the flavor of the spread.
It is of increasing interest to prepare a heterogeneous edible spread that has superior appearance, taste and texture. This invention, therefore, is directed to a heterogeneous edible spread comprising a water-in-oil composition having a water soluble humectant and a varigate composition having a water soluble humectant whereby the former and the latter comprise substantially the same water activity, and preferably, substantially the same flavor, and unexpectedly result in a heterogeneous edible spread with superior appearance, taste, and texture.

Water-in-oil spread with water base fruit composition


The present invention provides a headlamp capable of producing different light beams and fitted with a dynamic control mechanism for controlling the brightness minimizing light interference in all situations. The lamp comprises a light source with LED-type diodes; means for controlling the brightness and/or the geometry of the light beam; capturing means for generating an electrical signal representative of the reflected light intensity of the area illuminated by said light beam onto an illuminated object; and a control unit for generating control signals from the information generated by said capture system. The lamp has capturing means includes a focal system having a variable field under control of the control unit. Preferably, the capturing means includes at least two sensors with fixed focal length or, alternatively, a single sensor may be combined with a single controllable focal system electrically.

Headlamps are used in a large number of activities, including professional activities, sports and games.
Generally speaking, these lamps are intended to allow a "hand free" type of lighting which should be efficient, comfortable and ensuring maximum battery life.
The trend has been, for many years, to increase the functionality of the new headlamps.
The present application has introduced the concept of so-called "dynamic" lighting, with the use of a regulation of the power of the light emitted by the lamp, unlike a so-called "static" mode wherein the lamp produces constant power. Patent application FR2930706 dated Apr. 24, 2008 describes a self-regulated lighting lamp which uses a light sensor for sensing the light reflected by an object illuminated by the lamp for the purpose of controlling the regulation of the intensity of the light. FIG. 1 illustrates such a lamp that includes an optical sensor 14 located in the housing in the vicinity of the light-emitting diode LED 11 for outputting a signal being representative of the light reflected by the surface of an object 16 being illuminated by the lamp. The signal is transmitted to a second input of a controller 13 for automatically controlling the power of the LED according to a predetermined threshold. In this manner, automatic control of the light beam emitted by the lamp is achieved without requiring any manual action to adjust the lighting in the environment, while managing the power consumption.
Such conventional lamp has been improved by the provision of multiple LEDs to produce separate beams respectively wide and narrow, providing great flexibility to users of this lamp, which can thus benefit from strong light to see "afar" but also comfortable viewing "closely."
This lamp shows a significant success especially within sports communities, including rock climbing, hiking and running . . . .
However it has appeared that the so-called dynamic regulation system is difficult to implement because it tends to be easily disturbed by light echoes that interfere differently for a "far" vision with a narrow beam or a "close" vision with a wide beam.

LED lamp with a brightness control device


This method of processing data protected by a coding is particularly suitable to be used in microcircuit cards utilizing the method of processing data of the DES type. In the DES method, a step SP of transformation of compression S is included, which is followed by an irregular permutation P. According to the method, the transformation of compression S is effected in such a manner that the data to be stored are subjected beforehand to a permutation P, while a masking system is calculated specifically to permit the execution of the said step SP by recuperating only the desired bits, the latter then being automatically present at the predetermined storage locations.

Such a method of processing data protected by a coding is described in the publication "Federal Information Processing Standards Publication" (FIPS PUB 46) of Jan. 15th 1977, of the National Office of Standards of the U.S. Ministry of Commerce. When such a processing is applied to the data utilized in a microcircuit card, the processing must be as rapid and as compact as possible, the code length admissible in a microcircuit card being strongly limited. One of the steps of the coding, which step will be designated from now on as "Step SP", consists in a compression transformation S by look-up tables designated by Ti (corresponding to respective selection functions Si) followed by an irregular permutation P.
Conventionally, the compression S and the permutation P are effected in sequence (the permutation P being applied to the result of the compression S), which on the one hand necessitates a prohibitive processing time and, on the other hand requires a great code length and hence, an exaggerated storage occupation. In fact, the conventional method of carrying out a permutation of words, irrespective of their type, consists in taking each bit of the input word, calculating its position in the output word (generally by means of a table when the permutation is entirely irregular, as in the present case) and positioning therein the value of the bit considered. Since this processing is effected bitwise, it is clear that the cost of this method is proportional to the number of bits to be permuted. As to the execution of the transformation of compression S, the input word is decomposed into elementary words Wi, used as an index in the tables Ti, so as to obtain) the output word the tables Ti supplying (after concatenation of the different values stored in the tables Ti) the output word based on the elementary words Wi.

Method of processing data by compression and permutation for microcircuit cards


Process for the production of semiconductor devices comprising the steps of applying a solution of the specified polycarbosilane in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350.degree. C. in an oxidizing atmosphere to thereby covert the polycarbosilane layer to a silicon oxide layer. The resulting silicon oxide layer has a planarized surface and has no cracking and accordingly is useful as a dielectric layer and a protective layer in the production of semiconductor devices having a high reliability.

1. Field of the Invention
The present invention relates to a process for the production of a semiconductor device. More particularly, the present invention relates to a method of forming an electrically insulating layer, i.e., dielectric layer, between metal or other electrically conducting layers in the semiconductor device. The dielectric layer is referred hereinafter to as an interlayer dielectric layer. Also, the dielectric layer can act as a protective layer for protecting the device from the environment, if it is applied to the top surface of the device.
As is appreciated from the following descriptions of the present invention, the term "semiconductor device" used herein is intended to mean a variety of devices having a substrate consisting of semiconductor material, such as semiconductor integrated circuits (ICs), large-scale-integration circuits (LSIs), very-large-scale-integration circuits (VLSIs), ultra-large-scale-integration circuits (ULSIs) and the like as well as other electronic devices using semiconductor material.
2. Description of the Related Art
In recent years, the integration of the semiconductor devices has been surprisingly advanced for the purpose of attaining rapid processing of voluminous information. The LSI and VLSI circuits are commercially worked, and further the ULSI circuits will be worked soon. Note that the advances in the integration do not rely upon the expansion of the size or dimension of the device, i.e., chip, but, can be attained by miniaturizing and increasing of components to be fabricated in the chip and accordingly reducing the dimension of the chips. As a result, the minimum size of line and space of the wiring in the chips is on the order of submicrons and as a necessity, the wiring structure adopted in recent chips is a multilayer or multilevel wiring or metallization structure.
In the prior art production of integrated semiconductor devices, fine patterns of semiconductor regions, electrodes, wiring and other components are fabricated onto the semiconductor substrate by using conventional process steps such as ion implantation of impurities, thin film deposition and photolithography. The thus resulting patterned wiring layer contains a plurality of fine topographic features (projections and depressions) and steps.
After formation thereof, an interlayer dielectric layer is formed over the patterned wiring layer, and then via-holes or through-holes are bored in the predetermined sites of the dielectric layer. The next wiring layer is deposited and patterned over the dielectric layer, and the upper and lower wiring layers are electrically connected by using the above-mentioned process steps. The desired integrated semiconductor device is thus provided.
The dielectric layer sandwiched between two patterned wiring layers must to satisfy the following requirements:
1. It should show an excellent dielectric property, i.e., electrical insulating property. PA1 2. It should show a good resistance to heat. PA1 3. It should have a smooth surface, namely, it should show good planarization. PA1 4. It should show a good resistance to cracking. PA1 R.sub.2 represents a substituted or unsubstituted methylene or methyn group; and PA1 m and n each is a positive integer satisfying the condition of 10<m+n<1000 and a ratio of n and m is less than 0.3(n/m<0.3), in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350.degree. C. in an oxidizing atmosphere to thereby convert the polycarbosilane layer to a silicon oxide layer.
A plurality of dielectric materials have been proposed for use as interlayer dielectric layers, however, none of them is considered to be sufficiently satisfy all the above-mentioned requirements. The dielectric layer-forming materials include both inorganic and organic dielectric materials, and they are applied over the wiring layer by a chemical vapour deposition (CVD) process, sputtering process or spin-coating process, for example.
Typical examples of useful inorganic dielectric materials include silicon dioxide (SiO.sub.2), silicon nitride (Si.sub.3 N.sub.4) and phosphosilicate glass (PSG). The dielectric layer formed from these inorganic materials exhibits an excellent dielectric property and resistance to heat, however, if it is formed by thin film deposition technology such as CVD or sputtering process, the dielectric layer suffers from unevenness of the surface and thus disconnection of the wiring, because it can exactly reproduce an uneven and stepped profile of the underlying wiring layer.
On the other hand, typical examples of useful organic dielectric materials include polyimide resins and so-called "organic SOG (spin-on-glass)". The polyimide resins, particularly, recently developed photo-sensitive polyimide resins are useful in view of their good workability, because they can be subjected to a photolithographic process without using a resist material as a patterned mask. However, due to presence of imide rings having a higher polarity in the molecular structure thereof, the polyimide resins show a higher hygroscopicity or moisture absorption, and thus cause a problem that a dielectric property of the resulting layer is lowered as a result of an increase of the apparent dielectric constant which increase with moisture adsorption.
The SOG materials are those produced from silicon alkoxide of the formula: Si(OR).sub.4 wherein R represents an alkyl group, which is then hydrolyzed to provide the following equilibrium condition of the reaction: EQU Si(OR).sub.4 +4H.sub.2 O=Si(OH).sub.n (OR).sub.4-n +nROH
Using the SOG materials, it is possible to provide a thick dielectric layer having a smooth surface, because they can be spin-coated, and the dielectric property and heat resistance of the resulting layer are not so high as those of the above-mentioned inorganic dielectric materials, but are sufficiently high for practical use. However, the SOG layer suffers from formation of fine pores and cracking. Namely, upon heating of the SOG layer coated over the substrate, the hydroxyl (OH) groups constituting Si(OH).sub.n (OR).sub.4-n are condensed with dehydration to produce a cross-linked product having the unit Si--O--Si which is effective as a dielectric film having an excellent heat resistance. However, due to evaporation and decomposition of ROH upon heating, in addition to evaporation of H.sub.2 O produced from said condensation with dehydration, fine pores are liable to be produced in the SOG layer, and also cracks is liable to occur as a result of progress of curing which can act to clog said pores.
Based on the recognition of the above facts, the formation of an interlayer dielectric layer in semiconductor devices has been further advanced, and particularly, use of organosilicone polymers as an organic dielectric material has been taught in patent and other publications. The organosilicone polymers can be applied with a spin-coater, and accordingly enable the production of a thick dielectric layer having a smooth surface and thus semiconductor devices with a higher yield of production. The prior art organosilicone polymers, however, still suffer from the cracking problem. Moreover, the practically used prior art organosilicone polymers, while they can be spin-coated with smoothing of the layer surface, result in an insufficient smoothing effect, which is not sufficient to accomplish a global planarization in the obtained dielectric layer.
The global planarization will be further described with reference to the accompanying drawings.
FIG. 3 is a cross-sectional view of a semiconductor device having a multilayer or multilevel metallization (three-level metallization) structure in which a silicon substrate 1 has applied thereto three metal layers 2, 12 and 22. Aluminum is used herein as the metal. As is illustrated, the metal layers 2 and 12 are separated from each other through an interlayer dielectric layer 3 and wiring or electrodes of these layers are interconnected through the aluminum filled in a via-hole formed between the layers 2 and 12. Similarly, an interlayer dielectric layer 13 is sandwiched between two metal (Al) layers 12 and 22. A protective layer 23 having a dielectric property as in the dielectric layers 3 and 13 is disposed over the metal layer 22. In the illustrated semiconductor device, each of the dielectric layers 3 and 13 must be globally planarized, i.e., must have a global flat surface, so that the next metal layer can be formed over the dielectric layer without any difficulties.
According to the prior art methods, discussed above, it is difficult to accomplish a global planarization in the multilevel metallization structure. Referring to FIG. 1, it illustrates a cross-sectional view of a prior art semiconductor device having a defective dielectric layer. A patterned metal layer 2 formed over a silicon substrate 1 has two types of patterned steps, i.e., a relatively wide step 2a such as an electrode and a relatively narrow step 2b such as wiring. After formation of the metal layer 2, a dielectric layer 3 is spin-coated over the metal layer 2 by using the above-mentioned organosilicon polymers. The resulting dielectric layer 3, as illustrated, has an uneven surface due to low step coverage of the organosilicon polymers used as a dielectric material. Note that in the areas having the wide step 2a, the layer thickness of the dielectric layer is substantially the same as in the "space" areas having no electrodes or wiring. Desirably, the resulting dielectric layer should have a smooth or planarized surface over the full area of the underlying metal layer regardless of the presence or absence of steps or patterns therein. In other words, it is desired to practice an improved method of forming an interlayer dielectric layer from an organosilicon polymer which method does not cause a cracking problem and also ensures a global planarization.
The inventors of this application have found that a specified polyorganosilsesquioxane (PMMS) is soluble in an organic solvent, can be admixed with the organic solvent to control the viscosity thereof to a desired level, and accordingly is spin-coatable, and the coated layer of the polyorganosilsesquioxane is useful as an interlayer dielectric layer because it can satisfy the above-mentioned requirements concerning the resistance to cracking, planarization, heat resistance, dielectric property and the like. The polyorganosilsesquioxane can be prepared by hydrolyzing organotrichlorosilane or organotrialkoxysilane as a starting material and then condensing with dehydration. Preparation of polyorganosilsesquioxane and use thereof as an interlayer dielectric layer in semiconductor devices are described in, for example, U.S. Pat. No. 4,670,299, which isclosure is described herein for reference. The newly developed polyorganosilsesquioxane can be advantageously used as an interlayer dielectric layer in the production of semiconductor devices, however, there remains the problem that a satisfactory global planarization cannot be attained.
Further, it is noted that if the above-described organic dielectric materials such as polyimide and silicone resins are used in the formation of an interlayer dielectric layer, the dielectric layer is liable to release gases as a result of oxidation of organic groups contained in the layer-forming material during the oxygen (O.sub.2) plasma processing in the multilevel metallization process. The gas generated in the dielectric layer will result in defective areas in the obtained devices and also the oxidation and thermal decomposition of the dielectric material due to exposure to an elevated temperature of around 400.degree. C. will cause a distortion of the dielectric layer and accordingly cracking therein.
On the other hand, use of inorganic dielectric materials such as silicon dioxide and silicon nitride requires use of an expensive apparatus such as a CVD apparatus provided with a vacuum system. In addition, the use of inorganic materials has the drawback that explosive and toxic materials must be used as a source for deposition.
The combined use as a laminated structure of the organic dielectric materials such as polyimide and polyorganosiloxane resins and inorganic dielectric materials such as silicon dioxide, silicon nitride and phosphosilicate glass has been adopted in the formation of the dielectric layer. Generally, a layer of the organic dielectric material is used as the principal portion of the dielectric layer and a layer of the inorganic dielectric material is applied over the organic dielectric layer as a protective layer from the oxygen plasma processing. However, since each of the dielectric materials used has unavoidable drawbacks, the resulting dielectric layer is not satisfactory for use in semiconductor devices. In fact, it is difficult to avoid damage to the underlying organic layer due to application of an elevated temperature during formation of an inorganic layer with the CVD process.
To avoid oxidation decomposition during the oxygen plasma processing, it is contemplated to use a thin coating of fluorocarbon resins such as Teflon.TM.. However, these resins have the added problem that the resin coating will be decomposed upon thermal treatment in the production process of the semiconductor devices, because the thermal resistance of such resins is not good and on the order of 350.degree. C.
With regard to cracking caused in the interlayer dielectric layer, there is another observation that silicone-type hard coat materials which are also spin-coatable can be used as a dielectric material, and upon curing, can provide a dielectric layer having a low coefficient of thermal expansion similar to that of the silicon oxide layer, however, the dielectric layer, even if it has a notably reduced layer thickness of 5000.ANG. or less, cannot avoid cracking caused by the internal strain of the layer and thermal shock.


A microscope accessory uses symmetrical pairs of identical parabolic mirrors as an imaging optic to map a specimen plane with a remote focus. A mask at the remote focus defines at least one measuring area for making spectroscopic measurements while a separate viewing system simultaneously provides a wide field of view of the sample at higher magnification. The sample aperture, defines as 2T sterradians of solid angle surrounding each side of the specimen plane, is multiplexed between and among different functions--such as spectroscopic measurements and visual observations. The high numerical aperture possible using identical symmetrical aberration canceling (ISAC) optics facilitates the aperture multiplexing which has particular advantage in making reflectance measurements without any need for a significant loss of throughput efficiency.

Infrared spectroscopy involves two types of devices--spectrometers that generate a spectrum from infrared energy and accessories that take the infrared energy from a sample to the detector of the spectrometer. The present invention relates specifically to an accessory to deliver infrared radiant energy to a sample and to the detector of a spectrometer.
Fourier Transform--Infrared (FT-IR) spectrometers are today the spectrometers of choice for infrared spectroscopy. Whereas a dispersive spectrometer would measure one wavelength at a time, an FT-IR spectrometer measures all wavelengths at once, thus increasing the signal received by the photodetector, reducing measuring time and generally increasing efficiency. Examples of FT-IR spectrometers are well known in the art such as, for example, the Mattson Galaxy 5000. While this type of spectrometer is used in this application as an example of a suitable instrument, it is to be understood that the present invention has wide applicability beyond just FT-IR spectroscopy.
Spectroscopic analysis using radiant energy in the infrared regions of the spectrum has enormous importance independent of the particular type of spectrometer being used. Many chemical induced compounds can be identified by their distinct characteristic spectral signatures in an infrared, energy beam. Infrared spectral analysis offers a far more economical way of obtaining information than alternatives such as nuclear magnetic resonance (NMR), spectroscopy, also called magnetic resonance imaging (MRI), spectroscopy, since infrared analysis involves little more than simply shining a beam of light onto the sample. Infrared spectroscopy often works where these other, more elaborate methods do not.
Making infrared spectroscopy work, however, requires that the infrared energy first get to the sample and then get to a detector of the spectrometer. Doing this is far easier to state than to implement in practice. Infrared energy is invisible to the human eye. Selecting the sampling area therefore must be done in some indirect manner. The range of wavelengths covered by the infrared part of the spectrum is many times greater than for visible energy. There are few materials that are transmissive of infrared light and none that are equally refractive over all infrared wavelengths. Moreover, no known material can transmit all wavelengths of infrared energy equally, so any attempt to shine a beam of infrared radiant energy through a material will effectively change the wavelength distribution (color) of the beam. Accessories for infrared spectroscopy therefore usually use mirror optics since infrared lenses are impractical.
Another characteristic of infrared radiant energy is that it has a much longer wavelength than visible light. This characteristic presents a problem in that many of the things that one would want to observe using infrared energy, such as fibers, are so small that their size is comparable to that of the wavelength of the infrared energy itself. The wavelength of infrared energy defines the theoretical "diffraction limit" of what can be observed using infrared illumination. Obtaining this limit requires using optics that obtain close to the best possible resolution at infrared wavelengths.
Observing small samples using radiant energy is known as microscopy. It was perhaps natural that the first attempts to look as small things using infrared energy involved merely adopting those features of visible light microscopes that worked with infrared energy. Coates, working at the time for Perkin-Elmer, produced the first commercial infrared microscope in the late 1950's using mirror optics that, since they were composed entirely of mirrors, could be used with infrared energy without modification.
The first FT-IR spectrometers were introduced in the early 1970's. The vastly increased capabilities of FT-IR spectroscopy provoked a succession of new infrared microscopes. The second generation of microscope accessory, exemplified by the Nanospec 20-IR, adapted the original Coates design to the new generation of spectrometers. The next generation of microscope accessory, represented by the Digilab UMA 100, added the ability to analyze a microscopic area on a sample by reflecting infrared energy off its surface by splitting the aperture of a Cassegrainian mirror optic into input and output segments. An intercepting mirror was positioned as close as practical to the secondary mirror of the Cassegrainian mirror optic at a location that functioned as a "Fourier plane" to split the aperture of the microscope accessory for both reflective and infrared transmissive samples. The fourth generation of infrared microscope accessory, represented by the IR-Plan.RTM., shifted the intercepting mirror back from the secondary of the Cassegrainian mirror optic to an optically equivalent position. The resulting design required splitting the aperture of the Cassegrainian mirror optic only for reflective samples. A transmissive sample could be sampled using the full aperture of the microscope accessory.
The second, third and fourth generation microscope accessories proved to be successful and helped to establish the utility of microscopy in infrared spectroscopy. The inventor of the present application was an inventor of the third and fourth generation microscope accessories. See, U.S. Pat. Nos. 4,653,880, 4,877,960 and 4,878,747.
Their success and acceptance notwithstanding, all previous designs for a microscope accessory suffer from a fundamental problem. Starting with the first generation, the designers of infrared microscope accessories, including the applicant in his prior work, sought to duplicate the capabilities of existing visible light microscopes by merely using the components of a visible light microscope that worked with infrared energy. The problem with this approach is that infrared microscope accessories perform a substantially different function than do visible light microscopes. Merely duplicating a visible light microscope did not address these differences. Whereas a visible light microscope is designed to survey the widest possible field just for a given magnification, the purpose of an infrared microscope accessory is to sample a small, well defined area on the sample. Doing this with the same optics used for the visual survey is not necessary because the area of the sample to be measured spectroscopically is generally only a small section of the entire visual field of view. The result of merely duplicating visual light microscopes in a spectroscopic accessory that is over engineered, overpriced, and excessive when compared to what is needed for spectroscopic measuring of a part of a sample.
The over engineering of the infrared microscope accessory has also produced a significant problem when used in reflectance observations. Prior generations of microscope accessories performed spectroscopic measurements of samples that reflect radiant energy by dividing the aperture of a Cassegrainian mirror optic between input and output segments. This aperture division necessarily cut both the spatial resolution and throughput efficiency of the microscope accessory in half so that the available infrared energy never made it to the sample. Never was all the available energy directed to only a part of the Cassegrainian mirror optic, probably because the input pupil was circular and bringing a circular beam into only a part of the circular aperture would illuminate far too little of the aperture and reduce spatial resolution by far more than half.
Another problem with previous microscope accessories was that they all operate in either a visible inspection mode or an infrared sampling mode but never both. This false duality between visual survey of the sample and its spectroscopic analysis meant that the spectroscopist never really knew what was being measured when it was measured spectroscopically. Separating measuring from sampling also was unnatural since a microscopist would normally measure a sample while viewing it. The either/or choice between sampling and viewing, moreover, is not a function of Cassegrainian mirror optics; a single imaging optic, such as a Cassegrainian mirror optic, can be divided into different regions as shown by the previous aperture dividers used to observe reflective samples. See, for example, U.S. Pat. Nos. 4,653,880, 4,878,747, 4,915,502 and 5,011,243. There is no reason such aperture division could not extend to multiplexing visual surveying and infrared sampling provided that known steps are taken to filter out any He-Ne-laser light; it simply was not done.
There is a need in the art of FT-IR microscopy for a microscope accessory that will provide a wide field image for use in surveying a sample and a narrow field just for use in spectroscopically measuring a selected area of the sample. There is also a need to increase the spatial resolution and throughput efficiency of a microscope accessory when it is used to observe a reflecting sample. There is also a need for a microscope accessory capable of multiplexing the accessory to accommodate surveying and sampling simultaneously. None of these needs have been met in the first four generations of infrared microscope accessories discussed above.
It is an objective of the present invention to advance to a fifth generation of infrared microscope accessory that overcomes some or all of the disadvantages of previous microscope accessories. Another objective is a microscope accessory with a wide field of view for surveying a sample and a narrow field of view for measuring a selected area of that sample. Another objective is a microscope accessory that operates with substantially full spatial resolution and throughput efficiency when sampling reflective samples just as for transmissive samples. Another objective is a microscope accessory that can survey and sample simultaneously. It is also an objective of the present invention to produce a microscope accessory that is inexpensive to manufacture but that still has all the capabilities of larger, more expensive and over engineered microscope accessories.
The present invention attains these and other objectives with identical symmetrical aberration canceling optics having unitary magnification that image of a narrow field of view for making spectroscopic measurements and a separate viewing system that simultaneously provides a wide field of view of the entire sample image plane. The identical symmetrical aberration canceling mirror optics can comprise parabolic mirrors and the visual observation system can be supplied by sacrificing part of one mirror through which to view the sample image plane. The measuring and viewing systems allocate the sample aperture available to the microscope accessory, defined herein as the 2T sterradians of solid angle surrounding each side of the sample image plane, between and among the functions to be performed by the microscope accessory. Spectroscopic measurements can take place at the same time as visual observations since the separate functions occupy separate segments of the sample aperture. The identical symmetrical aberration canceling mirror optics can have a high numerical aperture to accommodate a larger portion of available sample aperture. This high numerical aperture gives the microscope accessory a measurement system with plenty of aperture to allocate between incident and reflected energy. The measurement system can measure a reflective sample without any loss of efficiency and with spatial resolution comparable to or greater than that attained with Cassegrainian mirror optics.
The present invention further facilitates confocal infrared microscopy. Masks can be positioned at remote images of the remote plane to select the area of the sample to be measured spectroscopically with the measurement system. A mirror can be positioned at one field stop to facilitate more precise sampling of transmissive samples.
These and other features of the present invention have the advantage that the high numerical aperture of the unitary focusing objectives provide diffraction-limited performance over the area needed for spectroscopic measurements and only that measuring area. The present invention actually improves resolution by increasing the numerical aperture of the measurement system using less expensive, narrow field imaging optics such as identical symmetrical parabolic mirrors rather than more expensive, wide field Cassegrainian mirror optics. The large numerical aperture allows aperture to be viewed for what it is, the full solid angle about the sample, rather than as something defined and limited by a single imaging optic. The enlarged concept of aperture provides plenty of room for multiplexing the observational and spectroscopic functions without any sacrifice in throughput efficiency. Another increase in efficiency comes from enabling viewing and sampling to happen simultaneously rather than sequentially.
All these advantages, and more, are obtained with the microscope accessory disclosed in detail below.

Spectoscopic sampling accessory having dual measuring and viewing systems