A method of forming dual-metal gates in a semiconductor device, including the steps of providing a semiconductor substrate having a PMOS area and an NMOS area wherein dummy gates are formed in the PMOS and NMOS areas respectively, forming an insulating interlayer on the semiconductor substrate so as to cover the dummy gates, polishing the insulating interlayer until the dummy gates are exposed, forming a first groove defining a first metal gate area by selectively removing one of the dummy gates formed in the PMOS and NMOS areas, forming a first gate insulating layer and a first metal layer on an entire area of the semiconductor substrate including the first groove successively, forming a first metal gate in the first groove by etching the first metal layer and first gate insulating layer until the insulating interlayer is exposed, forming a second groove defining a second metal gate area by removing the remaining dummy gate, forming a second gate insulating layer and a second metal layer on the entire area of the semiconductor substrate including the second groove, and forming a second metal gate in the second groove by etching the second metal layer and second gate insulating layer until the insulating interlayer is exposed.

1. Field of the Invention
The present invention relates generally to a method of forming dual-metal gates in a semiconductor device, and more particularly, to a method of forming dual-metal gates in a semiconductor device using a damascene process.
2. Description of the Related Art
Lately, as development of a sub-0.1 xcexcm MOSFET device progresses, a gate having low resistance is the major issue for securing device characteristics. Thus, many efforts are made to develop a metal gate as a substitute for the previous polysilicon or transition metal silicide gate.
Specifically, a gate in a MOSFET device is formed of polysilicon to sufficiently satisfy the gate-requiring physical properties such as high melting point, and to decrease difficulty in film formation and in line pattern, stability for oxidation ambience, surface planarization and the like. Moreover, in an actual MOSFET device, a polysilicon gate containing dopants such as P, As, B or the like realizes the low resistance.
However, gate width, gate insulating layer thickness, junction depth and the like are eventually reduced as the integration of a semiconductor is highly increased. Thus, polysilicon fails to further realize the low resistance required for the critical dimension.
In the mean time, developments for new gate material as a substitute for polysilicon progresses are necessitated. In the early days, the research and developments are focused on a polycide gate using transition metal silicide material. Yet, the polycide gate still contains a polysilicon content resulting in difficulty in realizing low resistance. Namely, the polysilicon content in the polysilicide gate brings about the increasing effective thickness of a gate insulating layer due to gate depletion effect, threshold voltage variance due to boron penetration/dopant distribution fluctuation in a p+ doped polysilicon gate and the like, thereby producing a limitation to realize low resistance therein.
Research and development for the metal gate addressing the above disadvantages is required badly.
Boron penetration and gate depletion do not arise in a metal gate using no dopant. Moreover, the metal gate has a work function value corresponding to a mid-band gap of silicon, thereby being applied to a single gate enabling the formation of symmetric threshold voltage in NMOS and PMOS areas. In this case, W, WN, Ti, TiN, Mo, Ta, TaN and the like are the metals of which work function values correspond to the mid-gap of silicon.
If a CMOS device including the single gate is fabricated using a metal gate, flat band voltage of the device in NMOS and PMOS areas is reduced. Thus, threshold voltage is increased. In order to reduce the threshold voltage, a buried channel should be formed using counter doping. Yet, in such a case, the short channel effect of a MOSFET device is increased, threshold voltage is decreased, DIBL (drain induced barrier lowering) and the like are brought about.
Therefore, the latest research and development is carried out on forming a dual-metal gate in a manner that metal gates having different work function values are formed in the NMOS and PMOS areas respectively using the operation principle of a dual-polysilicon gate.
It is ideal for forming a dual-metal gate that Fermi energy value of a metal gate in NMOS area exists near a conduction band of silicon while that of the other metal gate in PMOS area exists near a valence band of silicon.
A method of forming dual-metal gates in a semiconductor device according to the prior art is explained by referring to FIG. 1A to FIG. 1E as follows.
FIGS. 1A to 1E illustrate cross-sectional views of forming gates in a semiconductor device according to the prior art.
Referring to FIG. 1A, a semiconductor substrate 1, having a field oxide layer 2, is provided. An N well 3a and a P well 3b are formed respectively in the semiconductor substrate 1 using masking and ion implantation processes known in the art. A screen oxide layer (not shown in the drawing) of a film is formed on the semiconductor substrate 1. Ion implantations known in the art for adjusting threshold voltage are then carried out on the N well 3a and P well 3b areas respectively.
Referring to FIG. 1B, after the screen oxide layer has been removed, a gate insulating layer 4, a PMOS metal layer 5, and a barrier layer 6 are formed on the semiconductor substrate 1 including the field oxide layer 2, sequentially. The PMOS metal layer 5 is formed of a metal material of which the Fermi energy lies near a valence band of silicon.
Referring to FIG. 1C, a mask pattern (not shown in the drawing) covering the PMOS area is formed on the barrier layer 6. Then, the barrier layer 6 and PMOS metal layer 5 in the exposed NMOS area are etched.
Referring to FIG. 1D, an NMOS metal layer 7 is formed over an entire surface of the semiconductor substrate 1. A mask nitride layer 8 is then formed on the NMOS metal layer 7. In this case, the NMOS metal layer 7 is a metal material of which the Fermi energy lies near a conduction band of silicon.
Referring to FIG. 1E, etched by the process known in the art are the mask nitride layer 8/NMOS metal layer 7/gate insulating layer 4 in the NMOS area and the mask layer 8/NMOS metal layer 7/barrier layer 6/PMOS metal layer 5/gate insulating layer 4 in the PMOS area. As a result of this etch, metal gates 10a and 10b are formed on the P well 3a and the N well 3b, respectively. A spacer nitride layer is deposited over an entire area of the semiconductor substrate 1. Spacers 9 are then formed on both sidewalls of the respective metal gates 10a and 10b by blanket-etching the nitride layer. Source/drain regions 11a and 11b are formed on later side of the respective metal gates 10a and 10b by carrying out source/drain ion implantation on the resulting structure having undergone the above steps. Consequently, a CMOS device including dual-metal gates is fabricated.
Unfortunately, the CMOS device including the dual-metal gates according to the related has problems or disadvantages, as follows.
First, when the dual-metal gates are formed by the prior art, the respective metal layers in the NMOS and PMOS areas are etched by RIE (reactive ion etch). Because the heights and materials of the respective metal gates in the NMOS and PMOS areas are different from each other, it is difficult to set up an etch recipe. Thus, if the recipe setup is wrong, poor etching may result in the NMOS area of which etch depth is relatively deep as well as substrate damage in the PMOS area of which etch depth is relatively shallow.
Second, when the dual-metal gate is formed by the prior art, plasma damages in the etching and ion implantation processes and thermal damage caused by a thermal process after the gate formation result, thereby reducing device characteristics.
Third, when the barrier layer and NMOS metal layer are etched in the PMOS area, the gate insulating layer in the PMOS area is damaged by the etch, thereby reducing GOI (gate oxide integrity) characteristics.
Accordingly, the present invention is directed to a method of forming dual-metal gates in a semiconductor device that substantially obviates one or more of the problems due to limitations and disadvantages of the prior art.
The object of the present invention is to provide a method of forming dual-metal gates in a semiconductor device enabling to overcome the difficulty in establishing an etch recipe.
Another object of the present invention is to provide a method of forming dual-metal gates in a semiconductor device so as to prevent plasma damage in the etching and ion implantation processes and thermal damage caused by a thermal process.
A further object of the present invention is to provide a method of forming dual-metal gates in a semiconductor device enabling prevention of GOI (gate oxide integrity) characteristic degradation.
Another further object of the present invention is to provide a method of forming dual-metal gates in a semiconductor device to overcome the above-mentioned problems or disadvantages using a damascene process.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof, as well as the appended drawings.
To achieve these and other advantages, and in accordance with the purpose of the present invention as embodied and broadly described, a method of forming dual-metal gates according to the present invention includes the steps of providing a semiconductor substrate having a PMOS area and an NMOS area wherein dummy gates are formed in the PMOS and NMOS areas respectively, forming an insulating interlayer on the semiconductor substrate so as to cover the dummy gates, polishing the insulating interlayer until the dummy gates are exposed, forming a first groove defining a first metal gate area by selectively removing one of the dummy gates formed in the PMOS and NMOS areas, forming a first gate insulating layer and a first metal layer on an entire area of the semiconductor substrate including the first groove successively, forming a first metal gate in the first groove by etching the first metal layer and first gate insulating layer until the insulating interlayer is exposed, forming a second groove defining a second metal gate area by removing the remaining dummy gate, forming a second gate insulating layer and a second metal layer on the entire area of the semiconductor substrate including the second groove, and forming a second metal gate in the second groove by etching the second metal layer and second gate insulating layer until the insulating interlayer is exposed.
In another aspect of the present invention, a method of forming dual-metal gates includes the steps of providing a semiconductor substrate having a PMOS area and an NMOS area wherein dummy gates are formed in the PMOS and NMOS areas respectively, forming an insulating interlayer on the semiconductor substrate so as to cover the dummy gates, polishing the insulating interlayer until the dummy gates are exposed, forming first and second grooves defining first and second metal gate areas, respectively, by removing the dummy gates, successively forming a gate insulating layer and a first metal layer on an entire area of the semiconductor substrate including the first and second grooves, selectively forming a metal nitride layer by carrying out nitridation on the first metal layer formed in one of the PMOS and NMOS areas, forming a second metal layer on the metal nitride layer and the first metal layer so as to fill up the first and second grooves, and forming first and second metal gates in the PMOS and NMOS areas, respectively, by etching the second metal layer, first metal layer, metal nitride layer, and gate insulating layer until the insulating interlayer is exposed.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

Method of forming dual-metal gates in semiconductor device


A timer on a microprocessor includes a vibrator formed by a comparator, a capacitor, three reference voltages, and switched current sources, which charge and discharge the capacitor. The vibrator oscillates at two different amplitudes to generate two timing windows, one at high amplitude and the other at low amplitude. A counter counts incoming clocks and times out after a fixed number of vibrator oscillations. Logic starts the timing windows and subtracts incoming clock measurements taken during the two timing windows. The logic subtraction cancels errors accumulated from the multiple ramps of the capacitor in the vibrator. The subtraction allows more precise measurement of incoming clocks. If the clocks counted exceed a threshold value, the microprocessor shuts down due to over clocking.

1. Field of the Invention
The invention is related to microprocessors and microprocessor technology, and in particular to microprocessor timers.
2. Background Information
Microprocessors use clocks to synchronize the operations of the various circuits inside the microprocessor. The bus speed and a clock multiplier determine the speed at which the microprocessor core runs. For example, an Intel(copyright) Pentium(copyright) II 266 megahertz (MHz) microprocessor typically has a bus speed of 66 MHz and a clock multiplier of four.
From time to time computer users may try to run their microprocessors at higher speeds, ostensibly to get better performance. This typically is referred to as xe2x80x9cover clocking.xe2x80x9d There are many risks associated with over clocking, however. For example, operating at frequencies greater than the designed frequency can cause the microprocessor to overheat, which can cause it to become unstable, experience data corruption errors, etc. Over clocking can void warranties, shorten the microprocessor""s lifespan or the lifespan of other computer components. Sometimes, an over clocked microprocessor cannot be returned to its normal frequency and the effects of over clocking remain forever. This means that the microprocessor may be permanently damaged.
To minimize over clocking, conventionally, the microprocessor has an integrated reference timer that monitors the frequency. If the timer detects that the microprocessor is running too fast, the timer will initiate a microprocessor shut down.
Conventional reference timers are capacitor-based, which have limitations, however. The behaviors of the on-die capacitors used are difficult to predict, primarily due to variation in capacitor manufacturing processes. Integrated capacitors tend to be non-linear, as well. The non-linearity and process sensitivity reduce the viable range over which a capacitor""s voltage can be charged. Sometimes the variations are so extreme that it is difficult to accurately determine frequencies and the timer fails to initiate a microprocessor shut down in response to over clocking.
The first solution is to use a single capacitor and ramp it up and down multiple times. This solution is troublesome because errors accumulate for each ramp up transition and each ramp down transition. The accumulated errors result in a loss of precision that may be intolerable.

Reference timer for frequency measurement in a microprocessor


A vehicle speed control device is provided. The device includes a steering device which steers left and right wheels, first and second electric motors which separately apply power to the left and right wheels, an operation amount acquisition unit which acquires an acceleration operation amount by the driver of the vehicle, a steering angle acquisition unit which acquires a steering angle which is a value between an inner wheel steering angle and an outer wheel steering angle; a vehicle speed acquisition unit configured to acquire an actual speed of the vehicle; and a control unit configured to control the first electric motor and the second electric motor on the basis of the acceleration operation amount, the actual speed, the steering angle, and a steering geometry indicating a geometric relationship between the steering angle and a turning center of the vehicle.

1. Field of the Invention
The present invention relates to a vehicle speed control device for adjusting a speed (vehicle speed) of a vehicle having electric motors serving as a power source for separately applying power to left and right wheels.
2. Description of Related Art
In a typical four-wheel vehicle, the axles of left and right wheels are mechanically connected to each other through a differential. Power obtained from a single power source (for example, an engine) is transmitted to the left and right wheels (driving wheels) through the differential. In a vehicle turning state, the action of the differential compensates the difference in the wheel speed between the wheels due to the difference in the movement locus between the left and right wheels. As a result, the occurrence of an excessive front-rear skid (a skid in the rolling direction of the vehicle) of the left and right wheels is suppressed.
In the meantime, in recent years, there has been developed a vehicle (in-wheel motor vehicle) having electric motors (called in-wheel motors) respectively provided into the tire wheels of the left and right wheels (for example, see JP-A-2007-269129 and JP-A-2008-068832). In the in-wheel motor vehicle, no differential is provided, and the output shafts of the electric motors for the left and right wheels are not mechanically connected to each other. The electric motors for the left and right wheels are separately controlled, that is, the wheel speeds, the shaft torque, and the like of the left and right wheels can be separately controlled.
The skid of the wheel includes the above-described front-rear skid and a lateral skid which is a skid in the lateral direction with respect to the wheel. If it is assumed that the steering angles of the left and right steering wheels are adjusted in faithful accordance with the theoretical characteristics of the Ackermann geometry, the steering angle (inner wheel steering angle) of a turning inside wheel becomes greater than the steering angle (outer wheel steering angle) of a turning outside wheel. Then, under the condition that the turning center is placed on the extension line of the rear wheel axle, the lateral skid of each wheel in the vehicle turning state becomes zero (in a very low-speed range where centrifugal force is negligible).
However, in practice, it is very difficult to design a steering device in which the steering angles of the left and right steering wheels are adjusted in faithful accordance with the theoretical characteristics of the Ackermann geometry. In an actual steering device, the steering angles of the left and right steering wheels are adjusted in accordance with the characteristics of steering geometry close to Ackermann geometry such that the inner wheel steering angle becomes greater than the outer wheel steering angle. Accordingly, it is possible to suppress the lateral skid of each wheel in the vehicle turning state.


In one example embodiment, an optoelectronic assembly includes a multilayer ceramic substrate that includes multiple ceramic layers and a via disposed through at least one of the ceramic layers. The via may be formed from a conductive material that is configured to communicate a signal through the via. The multilayer ceramic substrate may be configured to dissipate heat emitted by an electronic component coupled to the multilayer ceramic substrate.

Unless otherwise indicated herein, the materials described herein are not prior art to the claims in the present application and are not admitted to be prior art by inclusion in this section.
Light signals (which may also be referred to as "optical signals") may be used to rapidly and reliably transmit information in a variety of applications such as fiber optic networks or computer systems.
The subject matter claimed herein is not limited to embodiments that solve any disadvantages or that operate only in environments such as those described above. Rather, this background is only provided to illustrate one example technology area where some embodiments described herein may be practiced.


A backlight assembly includes a plurality of lamps to generate light, a diffusing plate, a receiving container and a first supporting member. The diffusing plate is placed over the lamps and diffuses the light. The receiving container has a bottom portion and a sidewall portion extending from the bottom portion to provide a receiving space that receives the lamps. The first supporting member is disposed on the bottom portion to support the diffusing plate, and has a first inclined portion and a second inclined portion. The first and second inclined portions can be inclined to each other, or oriented in any other manner that allows them to reduce the amount of shock forces transmitted from the diffusing plate to the bottom portion. Thus, shock resistance and manufacturability of the backlight assembly may be increased and display quality of the display apparatus may be improved.

1. Field of the Invention
The present invention relates to liquid crystal displays. More particularly, the present invention relates to a backlight assembly for liquid crystal displays.
2. Description of the Related Art
In general, a liquid crystal display apparatus displays an image using optical and electrical properties of liquid crystal. The liquid crystal display apparatus has various advantages, such as light weight, low power consumption, low driving voltage, etc., in comparison with a display apparatus such as a cathode ray tube, a plasma display panel or the like. Therefore, the liquid crystal display apparatus is widely used in various electrical industries.
The liquid crystal display apparatus typically includes a liquid crystal display panel to display an image using a light transmittance of the liquid crystal, and a backlight assembly to provide the liquid crystal display panel with light.
The backlight assembly is commonly classified as either an edge illumination type backlight assembly or a direct illumination type backlight assembly, depending on the positions of light sources employed within the backlight assembly.
The edge illumination type backlight assembly includes a light guide plate, a lamp adjacent to an incident portion of the light guide plate, and a receiving container to receive the lamp. The light guide plate controls a path of the light incident through the incident portion and provides the light to the liquid crystal display panel.
The direct illumination type backlight assembly includes a plurality of lamps disposed under the liquid crystal display panel, a receiving container to receive the lamps, a diffusing plate disposed between the lamps and the liquid crystal display panel, and a reflecting plate disposed under the lamps. The diffusing plate diffuses light emitted from the lamps and light reflected by the reflecting plate, and the light diffused by the diffusing plate is provided to the liquid crystal display panel.
The direct illumination type backlight assembly further includes a supporter to support the diffusing plate and to separate the diffusing plate from a bottom face of the receiving container. The supporter has a lamp supporting portion to guide a receiving position of the lamps and a diffusing plate supporting portion to support the diffusing plate. In general, the lamp supporting portion has a U-shape, and the diffusing plate supporting portion has a conical shape.
However, when an impact is applied to the diffusing plate, the diffusing plate supporting portion does not absorb its energy well. As a result, the impact is applied to the lamps via the supporter, often breaking them. Further, since the diffusing plate supporting portion has a conical shape, the diffusing plate supporting portion scratches the diffusing plate, and noise is generated between the diffusing plate and the diffusing plate supporting portion.

Backlight assembly having a diffuser supporting member and a lamp supporting member and display apparatus having the same


A heat dissipation device is mounted to a light emitting diode device for removing heat from the light emitting diode which includes a substrate having a top side on which a light-emitting unit is formed and an opposite bottom side from which terminals extend. The heat dissipation device includes a plate made of heat conductive material and forming a receptacle for receiving and at least partially enclosing and physically engaging the substrate of the light emitting diode device for enhancing heat removal from the light emitting diode device.

The present invention generally relates to enhanced power light emitting diodes (LEDs), and in particular to a heat dissipation device for externally mounting to the enhanced power LED device for improving the performance thereof.
An enhanced power light emitting diode (LED) device as shown in FIG. 13 of the attached drawings comprises a substrate on which a light-emitting unit is formed and a plurality of terminals extending from the substrate. The terminals are soldered to a circuit board to mount the LED device to the circuit board.
The enhanced power LED is lightweight and consumes less power as compared to the conventional lightening devices. However, due to the illumination efficiency of the enhanced power LED, the luminance of the LED is much less than that of the conventional lightening devices. One way to compensate the poor luminance is to increase the electrical current flowing through the LED. Increasing current, however, leads to rise of heat generated. The heat is transmitted to and dissipated through the circuit board to which the LED device is mounted. The circuit board, however, is generally made of insulation material that is poor in transmitting and dissipating heat. Consequently, the power of the LED is subject to certain constraints and cannot be further enhanced.
FIG. 14 shows a diode packaged by resin material. A metal casing houses the diode package. The metal casing, however, is not to help removing heat from the diode for the diode in question does not generate a great amount of heat. The metal casing is, in fact, an electromagnetic shielding, rather than a heat dissipation device.
It is thus desired to provide a heat dissipation device for enhanced power LEDs to overcome the problems discussed above.
An object of the present invention is to provide a heat dissipation device externally mounted to an LED device for effectively removing heat from the LED.
Another object of the present invention is to provide a heat dissipation device for removing heat from an LED and enhancing the performance of the LED device.
To achieve the above objects, in accordance with a preferred embodiment of the present invention, there is provided a heat dissipation device adapted to be mounted to a light emitting diode device for removing heat from the light emitting diode, the light emitting diode device comprising a substrate having a top on which a light-emitting unit is formed and an opposite bottom from which terminals extend. The heat dissipation device comprises a plate made of heat conductive material and forms a receptacle for receiving and at least partially enclosing and physically engaging the substrate of the light emitting diode device with the top and thus the light-emitting unit exposed through a top opening of the receptacle. The receptacle defines opposite end openings for extension of the terminals of the light emitting diode device. Stop tabs are formed on opposite edges of each end opening for engaging ends of the substrate and thus retaining the light emitting diode device in the receptacle.
To achieve the above objects, in accordance with another embodiment of the present invention, there is provided a heat dissipation device adapted to be mounted to a light emitting diode device for removing heat from the light emitting diode, the light emitting diode device comprising a substrate having a top on which a light-emitting unit is formed and an opposite bottom from which terminals extend. The heat dissipation device is externally mounted to and at least partially encloses and physically engages the substrate of the light emitting diode device. The heat dissipation device comprises first and second members made of heat conductive material. The first member forms a receptacle for receiving the substrate of the light emitting diode device therein with the bottom of the substrate positioned on and supported by a bottom of the receptacle. The top and thus the light-emitting unit of the light emitting diode device are exposed through a top opening of the receptacle. The first member defines end openings for extension of the terminals of the light emitting diode device. Stop tabs are formed on opposite edges of each end opening for engaging ends of the substrate and thus retaining the light emitting diode device in the receptacle. The second member is mounted to the first member and physically engages the top of the substrate thereby interposing the substrate between the first and second members. The second member defines a central opening to expose the light-emitting unit and comprises perpendicular extensions engaging opposite ends of the substrate of the light emitting diode device.
To achieve the above objects, in accordance with a further embodiment of the present invention, there is provided a heat dissipation device adapted to be mounted to a light emitting diode device for removing heat from the light emitting diode, the light emitting diode device comprising a substrate having a top on which a light-emitting unit is formed and an opposite bottom from which terminals extend. The heat dissipation device comprises a plate made of heat conductive material and forms a receptacle for receiving and at least partially enclosing and physically engaging the substrate of the light emitting diode device. The receptacle has a top wall mounted to the top of the substrate of the light emitting diode device and defines a central opening through which the light-emitting unit is exposed. The receptacle defines end openings for extension of the terminals of the light emitting diode device. A stop tab is formed in each end opening for engaging an end of the substrate and thus retaining the light emitting diode device in the receptacle. The receptacle also forms catches for engaging the bottom of the substrate of the light emitting diode device whereby the substrate of the light emitting diode device is securely retained between the top wall of the receptacle and the catches.

Heat dissipation device for enhanced power light emitting diodes


System for withdrawing body fluid from a body part in particular the finger pad, comprising a compression unit that is deformed when the body part is pressed against it and increases the internal pressure in a region of the body part, and a withdrawal device. Deformation of the compression unit partially converts the primary pressing movement into a secondary movement which leads to an increase in the internal pressure in a region of the body part. The invention also comprises a system for stimulating the outflow of body fluid using a deformable compression unit.

The present invention concerns a system for withdrawing body fluid from a part of the body, especially the finger pad. Body fluids are primarily withdrawn for a subsequent analysis in order to diagnose diseases or to monitor the metabolic state of a patient. Such a withdrawal is carried out especially by diabetics in order to determine the blood sugar concentration. The aim of such a blood-sugar check that is usually carried out several times daily is to avoid hypoglycaemic states as well as hyperglycaemic states. In the case of a hypoglycaemia the patient can fall into a coma and even die since the brain is no longer adequately supplied with glucose. In contrast hyperglycaemic states can lead to long-term side-effects such as blindness, gangrenes and such like.
Consequently a frequent monitoring of the blood sugar level is an undisputed necessity. It is therefore obvious that there is an urgent need for sampling systems which are easy to operate by the user and are above all largely free of pain.
Already blood sampling systems have been known for some time in the prior art which allow the patient or hospital staff to carry out a withdrawal in a simple manner. A device suitable for this is for example the commercially available Softclix whose manner of operation is described in U.S. Pat. No. 5,318,584. This device provides an adjustment means for the depth to which a lancet is inserted into the tissue. Hence the patient can select the minimum puncture depth which enables a just sufficient quantity of blood to be obtained for a subsequent analysis and thus keep the incision pain very low. After the patient has produced a skin opening by piercing, he has to massage or press his finger in order to draw sufficient blood from the puncture wound especially with small puncture depths. This operation which is frequently referred to as xe2x80x9cmilkingxe2x80x9d by diabetics can hitherto only be avoided when the puncture is very deep and correspondingly unpleasant for the patient and can lead to major scarring on the sensitive finger tips. Devices known in the prior art attempt to stimulate the outflow of blood by applying a vacuum but this has proven to be not efficient.
Devices are also known in the prior art in which a so-called stimulator with a ring depresses the skin surface surrounding an incision site. Such a device for obtaining interstitial liquid is described for example in U.S. Pat. No. 5,582,184. The ring used to depress the skin surface is made of a rigid material. Only small amounts of fluid can be obtained with the device that are not adequate for commercial analytical systems.
Another device is known from U.S. Pat. No. 5,857,983 in which a syringe is inserted into the skin surface and the skin surface surrounding the site of incision is repeatedly depressed using a so-called stimulator in order to press body fluid into the syringe. Like the above-mentioned document a rigid ring is used in this device to depress the skin surface. The amounts of body fluid that can be obtained with this device are small and thus inadequate for conventional analytical systems.
Blood sampling devices are also described in the U.S. Pat. No. 5,951,493 which operate with a stimulator like the above-mentioned U.S. patent. In addition a device is described in FIGS. 15 to 17 in which the area of the device that is used to press against a body surface is provided with levers (104) which laterally press together a part of the body while the device is pressed against the body surface. The devices described in this patent are in particular intended for withdrawing body fluids from other sites than the finger pad. In addition the document shows that the transport of body fluid onto the skin surface is achieved by repeated pressing of the device.
A device is known from the document U.S. Pat. No. 3,626,929 in which a finger is clamped before blood withdrawal between a lever and a finger support. The finger support is moved by a motor in order to result in a massaging proximal to the incision site. For the withdrawal the user""s finger is pressed against a flexible cap in which needles and a fluid channel are located. A disadvantage of this device is that the needles for the withdrawal remain in the body and that in this state the finger support is moved. This results in the movement of the needles in the finger which usually leads to considerable pain in addition it is extremely unlikely that blood will emerge while there is a needle in the finger so that the channel is closed by the needle. A collecting container is shown in FIGS. 11 and 12 which has a flexible pressure-application region. However, due to the shape of the pressure-application region which widens conically towards the finger there is no conversion of a primary pressure-application movement into a lateral movement which squeezes the sampling region together.
The object of the present invention was to provide a system for withdrawing body fluid which, using small puncture depths, yields an adequate amount of body fluid, in particular blood. An additional object of the invention was to provide a system which can be easily operated and has a simple construction. Simplicity in this sense means in particular that the number of operating steps is as small as possible.
A further object of the invention is in particular to simplify blood withdrawal from the finger pad and in doing so take into account different finger sizes and different puncture sites on the finger tip.
Consequently the present invention concerns a system for withdrawing body fluid from a part of the body in particular a finger pad comprising the following elements:
a compression unit against which a body part is pressed in a primary direction and partially converts the applied pressure into a movement in a secondary direction with a component perpendicular to the primary direction such that the internal pressure is increased in a region of said body part,
a perforation device, in particular a lancet or needle to produce a body opening in the region of the increased internal pressure,
wherein the compression unit has a pressure-application region made of a deformable material.
The invention additionally includes a system for stimulating the outflow of body fluid from a body part, a process for stimulating outflow of body fluid and a process for withdrawing body fluid.
Use of the compression unit according to the invention enables the above-mentioned milking movement to be simulated in a simple and convenient manner for the user in order to squeeze out blood from the incision site. The compression unit not only yields larger quantities of body fluid than is the case with the compression devices of the prior art but the compression and withdrawal process is also considerably more pleasant for the patient. This is due to the fact that the compression unit fits snugly around the body part, in particular a finger. A further contributing factor is that the compression unit enables adequate quantities of body fluid to be obtained even with very small puncture depths.
An additional very important advantage of the present invention is that use of a compression unit with a pressure-application region made of deformable material enables body fluid to be withdrawn with the compression unit from body parts of various shape in a reliable and pleasant manner. In particular it easily and reliably enables withdrawal from fingers of different sizes. In addition the deformable material compensates for differences in the shape of the pressed body part (finger tip versus side of the finger).
The system according to the invention can be used particularly advantageously to obtain capillary blood from the finger pad. In addition it is also possible to withdraw blood or interstitial fluid from other body parts such as the arm.
An essential element of the system is the compression unit which results in the body part being squeezed together not only in the direction of the primary applied pressure but also results in the applied pressure being at least partially diverted such that a squeezing occurs with components of force transverse to the primary direction of pressure-application. As a result the region of the body part from which the withdrawal is to take place is pressed together laterally. The mode of action of this advantageous compression is elucidated later on the basis of the embodiments. The compression unit produces an increase of the internal pressure in a region of the body part. This region of increased internal pressure is adjacent to the region on which the applied pressure acts, or is surrounded by the region of applied pressure. A perforation device can now be used to perforate the region of increased internal pressure and remove body fluid.
The compression unit comprises a pressure-application, region made of deformable material. On the one hand such a material makes the withdrawal process more pleasant for the user and, on the other hand, it also enables an easier adaptation to the various shapes and sizes of the body parts. Deformable plastics such as elastomers, rubbers and such like can for example be used as materials for the pressure-application region. The pressure-application region is preferably ring-shaped. This represents, a technically significant difference to the device described in FIGS. 15 to 16 of U.S. Pat. No. 5,951,493. In the device of the prior art an arrangement of separate lever arms is used to laterally press together the body surface. This has a number of disadvantages. As a result of the distance between the lever arms, the lateral squeezing of the skin surface is incomplete since areas remain untouched between the lever arms. Furthermore in the worst case the skin can get stuck between the lever arm while they move together. Finally it should be noted that the device of the prior art is neither designed nor suitable for fitting snugly to body surfaces of various sizes and shapes. The device is primarily intended to withdraw body fluid from a region of the arm which is less curved compared to the finger pad. The said problems can be avoided by using a pressure-application region made of a deformable material which preferably has a ring shape.
The system for removing body fluid additionally has a perforation device to produce a body opening. Such a perforation device can be a lancet or needle.
In the case of a lancet it is preferably completely removed from the tissue after the incision such that body fluid emerging from the site of incision is accessible. In the case of a needle it can remain at the maximum puncture depth in order to extract body fluid from this depth or it can be withdrawn until it reaches the skin surface in order to take up liquid from this position.
The perforation device can be preferably guided onto the body surface through an opening in the compression unit or the pressure-application region. In order to achieve various depths of incision to allow for various skin types and also to account for the required quantities of blood, it is advantageous to have a variable puncture depth. In order to achieve a defined (and optionally preset) puncture depth it has proven to be particularly advantageous to arrange the perforation device such that it can be displaced relative to the compression unit. This displaceability comprises two aspects which can also be combined. In the first aspect the perforation device is spring loaded relative to the compression unit such that a front face or a stop on the perforation device elastically rests against the body surface when the body part is pressed against the compression unit. The compressive force of the perforation device on the body surface is preferably in the range of 1 to 5 N and is preferably ca. 2 N. If greater compressive forces are used there is a danger that body fluid in the region of the increased internal pressure will be pressed out of this region.
The second aspect i.e. the relative displacement of the perforation device and compression unit concerns a movement of the perforation device into a perforation position and movement away from this position in order to create space to take up body fluid by means of a receiving device. This aspect is particularly important for an integrated system which can be used for blood withdrawal as well as analysis.
In advantageous embodiments of the invention the system for withdrawing body fluid is integrated into an analytical system. Such analytical systems are well-known in the prior art. For example analytical systems named ACCUCHECK PLUS(copyright) and ACCUCHECK ADVANTAGE(copyright) are commercially available. As a rule analytical systems which are designed for consumers use disposable test elements which, after contact with a sample liquid, yield a signal which depends on the analyte concentration. In the field of blood sugar measurement optical test elements are used in which the reaction of glucose with a test chemistry leads to a change in colour as well as electrochemical test elements in which an enzymatic conversion of glucose enables an amperometric or potentiometric analysis. The test elements can be advantageously designed such that they actively take up body fluid (e.g. by means of a capillary gap).
The system according to the invention simplifies the integration of a withdrawal unit with an analytical system or for the first time makes an integration possible. As already stated it is customary in the prior art to manually press out the body fluid after producing a skin opening which means that the patient has to remove the body part from the withdrawal device. In contrast a system according to the present invention enables the patient to press the body part against the deformable compression unit and to leave it there in this compressed state to produce a skin opening as well as for the withdrawal. Hence a stronger degree of automation is possible in which the patient only has to press against the compression unit and all subsequent steps up to the read-out of the analytical result can proceed automatically.
Hence an integration of the perforation device and analytical system not only advantageously relates to a spatial integration but also to a process integration which avoids operating steps by the user. Correspondingly such a system also advantageously has a control unit which controls coodinatively activation of the withdrawal device, the withdrawal of body fluid and the transport of body fluid to the analytical system and the analysis.


A method and apparatus for electrical discharge or electrochemical machining of workpieces, in which a machining electrode is moved relative to a workpiece, the machining is performed in cycles, and the appropriate process parameters are adjusted for machining of the current cycle with consideration of process parameters of the current cycle. To improve this method and the apparatus to the extent that improved geometric machining accuracy is made possible without time losses, stored process parameters of at least one previous cycle are also considered for adjustment of the process parameters of the current cycle.

The present invention concerns a method and apparatus for electrical discharge or electrochemical machining of workpieces in which the machining electrode is moved relative to a workpiece, the machining comprises cycles and appropriate process parameters are adjusted for machining of the current cycle, and especially with consideration of process parameters of the current cycle.
Numerous cyclic machining methods are described in the prior art, especially planetary EDM methods.
Such a generic planetary EDM method is known, for example, from xe2x80x9cIndustrie-Anzeigerxe2x80x9d, Special Issue, April 1981, page 109ff. This method involves planetary EDM of cavity sinkings, in which a cyclic translatory movement is conducted for machining between the machining electrode and workpiece laterally in planes arranged transversely to the direction of advance. Each plane is then machined cyclically by the machining electrode, the cyclic translatory movements being used in the form of orbital movements to widen a machining or for layered machining.
During electrical discharge machining, material removal occurs on the electrically conducting workpiece, owing to the fact that the machining electrode is brought to the workpiece and electrical discharge occurs. Machining then occurs by the translatory movement between the electrode and the workpiece in an appropriate working liquid. A gap width control superimposed on the translatory movement ensures maintenance of the appropriate spacing between the machining electrode and the workpiece.
It is known from the generic document that the speed of the translatory movement can be controlled as a function of the current process state, in order to avoid losses of efficiency, for example, to carry out the translatory movement with increased speed in the no-load section (sections of the cyclic translatory movement, in which material removal no longer occurs during machining). A shortcoming in this method, however, is that strong fluctuations of the true path can occur within one cycle as a function of the geometry of the reference path in the course of machining. Moreover, braking or delay at tricky sites is problematical at increased speeds. Specifically, it can happen during abrupt changes in direction, for example, that braking is not carried out in a timely fashion and, in the extreme case, the machining electrode can even collide with the workpiece. Because of this, the gap width regulation system can be overtaxed, so that incorrect discharges increasingly occur, which result in increased wear of the machining electrode.
A further developed planetary EDM method is known from EP 0 340 569, which seeks to solve the above problems. Each planetary revolution (cycle)is subdivided into a specific number of angle positions of the planetary angle, and the true path, i.e., the effective deflection amplitude of the machining electrode, is stored for each angle position. The reference path for the pending planetary revolution is then determined in advance from the true values from at least one of the past planetary revolutions and the expected volume of removal. The process runs at almost constant planetary speed. The most erosion-intense discharges possible and therefore a shorter machining time are also sought. The true movement, as mentioned, can be determined from one or more preceding planetary revolutions or, alternatively, from a trial run without erosion. The emphasis in this method therefore lies in accelerating the machining process.
To summarize, it can be stated that this document considers the geometric data of previous planetary revolutions, in order to adjust the geometric data of the pending planetary revolution. Process parameters of previous planetary revolutions are not considered.
In principle, in all known devices, the corresponding CNC control views machining as completed as soon as the undersize is reached. The undersize to be reached, however, refers to a theoretical gap width stored in process parameter data sets. A change in effective gap width, as is usually produced by the gap width control, remains unrecognized, which can have extremely harmful effects on contour accuracy.
The underlying task of the disclosed device is to improve the generic method to the extent that an improved geometric machining accuracy is made possible without time losses, especially to increase process safety and reproducibility.
To solve the task in a generic method, stored process parameters of at least one previous cycle are also used to adjust the process parameters of the current cycle.
The invention proceeds from the observation that, in cyclic machining, a location-bound development of certain process parameters can be established. If a disturbance, for example, occurs at one site of a cycle, the development of this disturbance is also generally apparent in the subsequent cycle at the same site.
Based on this observation, the illustrated device stores the process behavior for already performed cycles and evaluates the stored data to establish certain process parameters of the pending cycle, so that sections of the pending cycle to be machined can be arrived at in advance. For example, depending on whether a disturbance-free section, a no-load section or a critical section is expected, the process parameters to be used are adjusted accordingly. Process disturbances and time losses can therefore largely be avoided to advantage, good shape trueness can be achieved and the process optimized overall.
Preferably, at least one process parameter is measured during at least one preceding cycle. At least one process parameter to be adjusted in the current cycle is derived from this measured parameter. The at least one derived process parameter is stored during the preceding cycle and the at least one stored process parameter is adjusted during the current cycle.
The cycles, including machining (which is also referred to as cyclic machining below), preferably involve planetary erosion during cavity sinking or pocketing during wire erosion. However, any wire erosion machining, in which a full cut and a certain number of aftercuts are carried out, can, in principle, be referred to as cyclic.
Process parameters permanently stored in a table, alternatively or additionally, are preferably used for adjustment of the process parameters, which, in particular, are established with reference to optimization of erosion, with reference to performance of no-load and/or with reference to performance of the guaranteed disturbance-free machining. Stipulated process parameters can therefore also be permanently stored for specific standard situations, like no-load machining, or also for specific compositions of the workpiece, machining electrode, geometry being machined, etc., which can then be called up in specific situations for instantaneous machining. These can be called up, in particular, for those situations when instabilities in process parameter control occur.
The preceding cycles arc preferably investigated by a reference/actual value comparison of the measured process parameter on sections in which a machining disturbance, a no-load condition and/or another condition deviating from the normal case occurs, and adjusted process parameters are set, at least in the corresponding sections of the current cycle. Sections of the cycle are advantageously characterized, in which specific situations occur, and for which optimized process parameters can be worked out in the subsequent cycle with respect to the situation.
Adjusted process parameters are preferably already set in one region before the corresponding sections of the current cycle. For example, abrupt transitions in process parameters that otherwise could lead to machining inaccuracies can therefore be advantageously avoided.
The length of the region is preferably chosen as a function of planetary speed. For the case of wire erosion, the planetary speed corresponds to the wire advance speed.
Machining is preferably divided into a number of layers and sectors and the relevant process parameters are stored layer-wise and sector-wise. For cavity sinking in planetary erosion, the volume being eroded, for example, can be subdivided into layers lying normal to the direction of advance. At the same time, the orbital movement can be divided into sectors, so that, as a result, each machining site can be specified by a sector element. Location-related process information can be allocated and stored in simple fashion on this account.
For wire erosion, these layers can correspond to the full cut and the aftercuts and the sectors are defined along the aftercut.
The process parameters for the current cycle arc preferably set at the beginning of the sector, which are derived from the measured process parameters of preceding cycles, and the process parameters of the current cycle are recorded and stored at the end of a sector as measured quantities for the cycle following the current cycle. Process instabilities are advantageously avoided because of this arrangement. By selecting the sector length, the xe2x80x9ccontrol behaviorxe2x80x9d of the entire process control can then be influenced, i.e., a longer sector length therefore leads to longer sections, in which this process adjustment acts almost as process control.
After adjustment of the process parameters at the beginning of a sector, up to measurement of the process parameters at the end of a sector, only selected process parameters are preferably monitored for particular disturbances. This has the advantage that, during quasi control within a sector, at least those process parameters that can exhibit a significant disturbance situation are monitored. These disturbances can then be reacted to with stored process parameters, which lead in each case to a disturbance-corrected situation.
The stored process parameters after each cycle are preferably multiplied by a weighting factor. This has the advantage that, depending on the situation, certain cycles contribute more strongly or less strongly to determination of the current process parameters. In particular, during corresponding multiplication of all process parameters within a cycle by a factor smaller than one, the process parameters of cycles farther downstream can be included less strongly in an averaging of the process parameters of a specific number of downstream cycles.
With particular preference, cycles with disturbance-affected sections can be multiplied by an increased weighting factor, so that these advantageously have a stronger effect on the subsequent cycles. This disturbance could repeat again, for example, only in the next cycle but one, or in one of the subsequent cycles. By this weighting, special measures can also be taken in these cycles in the relevant sections.
The process parameters to be stored preferably include at least one of the following parameters:
the sum of servo-inteps errors,
the discharge power,
the average discharge current,
the average erosion voltage,
the ignition delay time,
the percentage of short-circuit pulses,
the percentage of instability,
the frequency of program return movements,
the number of interventions of the process to avoid degenerate pulses,
the average pause voltage (i.e., the average voltage during the pause between pulses).
The process parameters to be adjusted preferably include at least one of the following parameters:
the planetary speed
pulse parameters, especially
period duration
pause duration
current
voltage
servo control parameters, especially
amplification
servo reference value
programmed return movements, especially
the frequency of return movements
the stroke of return movements
the strategy during return movements.
The planetary speed is preferably optimized as the process parameter being adjusted with respect to erosion, in which this is determined from several cycles with different planetary speed, each cycle being performed with a constant planetary speed. Advantageously, a planetary speed optimized automatically with respect to erosion can be determined with reference to several test cycles or actual machining cycles.
The planetary speed is preferably optimized as a process parameter being adjusted with respect to machining accuracy, in which a cycle is conducted with a planetary speed reduced relative to the erosion-optimized planetary speed and the planetary speed optimized in machining accuracy is determined by means of the measured process parameters. The machining accuracy can advantageously be strongly increased, especially during the end phase of machining.
The erosion-optimized planetary speed and/or the planetary speed optimized in machining accuracy is then preferably redetermined periodically after a certain number of cycles or on the occurrence of relevant changes in process parameters.

Process parameter optimization in electrical discharge machining


A computer controlled interactive display system for for providing a user interface for data entry with user changeable autocomplete functions for the data entry fields. For each of the fields, there is provided autocomplete means, i.e. means for automatically providing a proposed completion of a user entry into at least one of said fields, and user-interactive means for selectively disabling or otherwise modifying said means for automatically providing a proposed completion. Further means are provided for indicating whether said means for automatically providing a proposed completion of user entries has been disabled for a data entry field.

The 1990's decade has been marked by a technological revolution driven by the convergence of the data processing industry with the consumer electronics industry. This advance has been even further accelerated by the extensive consumer and business involvement in the Internet over the past two years. As a result of these changes it seems as if virtually all aspects of human endeavor in the industrialized world requires human/computer interfaces. There is a need to make computer directed activities accessible to a substantial portion of the world's population which, up to a few years ago, was computer illiterate or, at best, computer indifferent. In order for the vast computer supported market places to continue and be commercially productive, it will be necessary for a large segment of computer indifferent consumers to be involved in computer interfaces.
One function which developers of display interfaces have been addressing is ease of use in the entry of data, and particularly the entry of textual data. No matter how intuitive and easy to use an interface may be in its use of icons and related three-dimensional real life to make even the novice user feel at home with the interface, in most human/computer transactions a point is reached when the user must enter data, particularly text data. Unfortunately, most people have limited capabilities with the keyboard which still remains the primary means for entering text into a computer display interface. Data entry system designers recognizing users' limited ability with the keyboard have developed a variety of expedients making text data entry easier. One such expedient in relatively widespread use has been the autocomplete function. Autocomplete involves the system into which the data is being entered developing and saving a library of possible entries for each of a group of data fields required to be entered by the user. Such entry fields could include, for example, names, part descriptions, part numbers, social security numbers and/or telephone numbers. These libraries are developed, to some extent, based upon the historical frequency of usage by either an individual, group, whole industry or business field. Then, as the user starts to make a particular entry, the system attempts to autocomplete by providing a proposed complete entry based upon the portion of text or like data already entered, extrapolated against the stored entries in the library. If the proposed entry coincides with the intended user entry in the field, the user may move on to the next field where autocomplete may again be provided. Accordingly, in an interface such as a tax form or other type of business form, it may be understood that the completion of the entries could be substantially expedited.
On the other hand, such autocomplete functions could confuse the user, particularly in the case of multiple entry fields and with users of limited computer data entry experience. The user could loose track of which entry fields were autocompleted and which were based totally upon the user's own data. In this connection, with a given entry, the user could be confused into accepting the proposed autocomplete entry and moving on to the next entry field even though the proposed entry is different from the intended entry. Thus, with certain combinations of users and entry data types, autocomplete functions may actually make the user display interface more difficult.

User-interactive data entry display system with entry fields having distinctive and changeable autocomplete

International Business Machines Corporation


User interface experiences with electronic devices are enhanced with feedback cues such as haptic or vibrotactile output feedback. One or more piezoelectric actuators generate haptic output. The one or more piezoelectric actuators may be integrated onto a display substrate, a battery case, a device enclosure, or other component. Such integration may improve propagation of the haptic output to the user, reduce bulk of the electronic device, minimize parts count, and reduce production costs.

User interfaces for electronic devices traditionally engage a limited number of human senses. Users see images presented on displays, and hear sounds generated by speakers, but physical feedback has been limited to simple shakes or buzzes. Furthermore, in addition to having limited output capabilities, traditional mechanisms are bulky, rendering them difficult to incorporate into small form-factor devices.

Piezoelectric haptic actuator integration


A semiconductor device constituting a light detection element in which a photoconductive layer is sandwiched between a transparent electrode and a metal electrode, in which the metal electrode has a lamination structure consisted by two different metals, one of the metals on the photoconductive layer side being formed of tantalum (Ta) or tungsten (W), the other of the metals being formed of titanium (Ti). Thereby, silicide is prevented from being formed in the interface to the photoconductive layer, so that the titanium (Ti) can be made to act as a good etching stopper at the time of patterning the photoconductive layer by etching, and since titanium (Ti) which has high electrolytic-corrosion-proof is used as the metal electrode, it is possible to obtain a semiconductor device having high reliability.

The present invention relates to a semiconductor device, and particularly relates to a structure of a light detection element in an image sensor in which a light detection element and a thin film transistor are formed on the same substrate, and in which the thin film transistor is protected to thereby improve the yield.
Conventionally, a contact-type image sensor is used for projecting and converting picture information of an original document into electric signals having one to one correspondence. There has been proposed a TFT-driving image sensor in which a projected picture is divided into a number of picture elements, and charges produced in respective light detection elements corresponding to the picture elements are accumulated temporarily in wiring capacities of respective wirings for every specific block by switching elements constituted by thin film transistors (TFT), and read out as electric signals by a driving IC sequentially in time series at a rate in a range of from several hundred KHz to several MHz. In this TFT image sensor, by a matrix operation performed by TFTs, it is possible to read light detection elements in a plurality of blocks by a single driving IC, so that it is possible to reduce the number of driving ICs for driving an image sensor.
A TFT-driving image sensor is, for example, as shown in an equivalent circuit thereof in FIG. 3, constituted by a light detection element array 101 in which a plurality of light detection elements P(k, n) are arraged in a line having almost the same length as the width of an original document, a charge transfer portion 102 constituted by thin film transistors T(k, n) which one to one correspond to the respective light detection elements P(k, n), and a matrix-shaped multilayer wiring 103.
The light detection element array 101 is divided into k blocks of light detection element groups, and n light detection elements P(k, n) constituting each group of light detection elements can be expressed equivalently by photodiodes and parasitic capacities. The respective light detection elements P(k, n) are connected with drain electrodes of the corresponding thin film transistors T(k, n). The respective source electrodes of the thin film transistors T(k, n) are connected with the corresponding common signal lines 104 (n lines) for every light detection element group through the multilayer wiring 103 connected in a matrix, and the common signal lines 104 are connected with a driving IC 105. The gate electrodes of the respective thin film transistors T(k, n) are connected with a gate pulse generating circuit 106 so that the thin film transistors T(k, n) are made conductive for every block.
Photoelectric charges produced in the respective light detection elements P(k,n) are accumulated in parasitic capacities of the light detection elements P(k, n) and overlap capacities between the drain electrodes and gate electrodes of the thin film transistors T(k, n) for a constant time, and thereafter are transferred to and accumulated in wiring capacities CL of the multilayer wiring 103 sequentially for every block in such a manner that the thin film transistors T(k, n) are used as switches for transferring charges. That is, a gate pulse .phi.G1 transferred from the gate pulse generating circuit 106 through a gate signal line G1 makes thin film transistors T(1, 1) to T(1, n) in the first block turn on, so that charges produced in the respective light detection elements P(k, n) in the first block are transferred to and accumulated in the respective wiring capacities CL. Then the charges accumulated in the respective wiring capacities CL change the electric potentials of the respective common signal lines 104, and analog switches SWn in the driving IC 105 are turned on sequentially to extract these potential values through an output line 107 in time series. Then gate pulses .phi. G2 to .phi.Gk turn on the thin film transistors T(2, 1) to T(2, n) of the second block through the thin film transistors T(k, 1) to T(k, n) of the k-th block respectively, so that charges on the light detection elements are transferred for every block and read sequentially to obtain picture signals of one line of the main scanning direction of an original document. The above-mentioned operation is repeated while the original document is shifted by an original document feeding means (not-shown) such as a roller, so that picture signals of the whole of the original document can be obtained (reference be made to Japanese Unexamined Patent Publication No. Sho-63-9358).
A light detection element P in the above-mentioned image sensor and a thin film transistor T provided for every light detection element P for transferring charges produced in the light detection element P are formed on the same glass substrate 1 as shown in FIGS. 2A to 2D. A production process of the light detection element P and the thin film transistor T will be described with reference to FIGS. 2A to 2D.
First, a chromium layer (Cr) is formed on a glass substrate 1 and patterned to thereby form a gate electrode 2.
Next, a silicon nitride film (SiNx) to be formed into a gate insulation layer 3, an amorphous silicon hydride (a-Si:H) film 4' to be formed into a semiconductor active layer 4, and a silicon nitride (SiNx) film are successively formed, and then the silicon nitride (SiNx) film is patterned to thereby form an upper insulation layer 5 on the gate electrode 2.
Succeedingly, an n.sup.+ amorphous silicon hydride (n.sup.+ a-Si:H) film 6', a metal film 7' to be formed into a lower electrode of the light detection element P and a barrier metal layer of the thin film transistor, an amorphous silicon hydride (a-Si:H) film 8', and an indium-tin oxide (ITO) film 9' are formed continuously (FIG. 2A).
After a resist (not shown) is formed on the indium-tin oxide film 9', the pattern of a transparent electrode 9 of the light detection element P is formed by an etching process (FIG. 2B).
Next, the amorphous silicon hydride film 8' is patterned by an etching process so as to form a photoconductive layer 8 of the light detection element P (FIG. 2C).
Next, the metal film 7' is patterned by a photo-lithograph process so as to form a lower electrode 7a of the light detection element P and barrier metal layers 7b and 7c of the thin film transistor T. Succeedingly, the n.sup.+ amorphous silicon hydride film 6, is patterned with the same mask so as to form ohmic contact layers 6b and 6c of the thin film transistor T, and further the amorphous silicon hydride (a-Si:H) film 4, is patterned so as to form the semiconductor active layer 4 of the thin film transistor T (FIG. 2D).
In the above-mentioned production process, the metal film 7' serves also as an etching stopper at the time of etching the amorphous silicon hydride film 8' to form the photoconductive layer 8, as shown in FIG. 2C. Therefore the metal film 7' is formed of a material such as, for example, chromium (Cr) or titanium (Ti), which cannot be etched at the time of etching the amorphous silicon hydride film 8'.
In the case where chromium (Cr) is used as the metal film 7', it becomes a good etching stopper at the time of etching the amorphous silicon hydride film 8', but it is apt to be melted by electrolytic corrosion, so that there has been a problem that the reliability of the light detection element P or the thin film transistor T is deteriorated.
On the other hand, in the case where titanium (Ti) is used as the metal film 7', it is apt to produce a reaction in the interface between the amorphous silicon hydride film 8, and the metal film 7' of titanium (Ti) to thereby form silicide, and this silicide is etched under the etching conditions of the amorphous silicon hydride film 8', so that there has been a problem that the yield of the thin film transistor T formed under the metal film 7' is deteriorated.

Semiconductor photoconductive device with laminated refractory metal electrode


In the disclosed semiconductor device mounting arrangement, an integrated circuit has an elastic body on one surface and protruding electrodes on the opposite surface and a support frame includes a pressing member to engage the elastic body directly so as to force the protruding electrodes into engagement with a wiring pattern formed on a substrate. In the disclosed semiconductor device mounting method, a liquid crystal display panel having an integrated circuit with protruding electrodes is placed on a wiring pattern and an elastic body is provided on the surface of the integrated circuit which is opposite from the protruding electrodes. The assembled components are positioned between a pressing portion and a base member of a support frame so that the elastic body is compressed and the reaction from the compression is utilized to engage the protruding electrodes with the wiring pattern.

This invention relates to semiconductor mounting arrangements and to methods for mounting semiconductor devices.
Heretofore, a so-called "face-down mounting structure" has been employed for liquid crystal display units or printing heads in which electrodes projecting from an integrated circuit are connected directly to a wiring pattern on a substrate without using lead wires. In such mounting structures, the integrated circuit is held in place with a resin. On the other hand, in semiconductor device mounting arrangements, a plurality of semiconductor devices are positioned close to one another. Therefore, when it is necessary to replace one of the semiconductor devices, the resin which holds the integrated circuit must be melted. However, this resin-melting operation is disadvantageous because the heating of the resin adversely affects other integrated circuits.
In order to overcome this difficulty, the present applicant has previously proposed, in unexamined Japanese Patent Application No. 39464/1990, a semiconductor device mounting structure of the type shown in FIG. 2. That structure includes an integrated circuit 104 engaging a glass substrate 109 with two electrodes 105 protruding from the pad of the integrated circuit 104. Those electrodes are pushed against a wiring pattern 106 formed on the glass substrate 109 by a cap 102 covering the integrated circuit 104 and having legs which are bonded to the plate. An elastic body 103 is provided between the cap 102 and the integrated circuit 104 to push the protruding electrodes 105 against the wiring pattern 106. As shown in FIG. 2, the cap 102 is mounted on the plate 109 by adhesive 107. In addition, another glass plate 108 is mounted adjacent to the plate 109 and liquid crystal material is sealed between the two glass substrates 108 and 109, thus forming a liquid crystal display module.
In order to push the integrated circuit 104 against the wiring pattern 106 in the above-described semiconductor mounting structure, it is necessary to provide the cap 102 with the elastic body 103. Consequently, the structure has the disadvantage that it requires a relatively large number of components, and a correspondingly large number of manufacturing steps, with the result that it has a high manufacturing cost.

Mounting arrangement for a semiconductor device


A method for preparing vindesine monosulfate, substantially free from hemisulfate and disulfate.

Vindesine is disclosed in the copending application of Cullinan, and Gerzon, Ser. No. 828,693 filed Aug. 29, 1977, and is named therein as 4-desacetyl VLB C-3 carboxamide. The compound has the following structure ##STR1## Vindesine can also be named as 4-desacetyl-3-descarbomethoxy VLB 3-carboxamide or as 23-amino-O.sup.4 -desacetyl-23-demethoxy-vincaleukoblastine. A sulfate salt of vindesine is also specifically disclosed in Ser. No. 828,693. This sulfate is obtained by neutralization of vindesine base with dilute sulfuric acid followed by lyophilization. The salt thus obtained is electrostatic, hygroscopic and unstable upon storage.
It has now been found that there are three salts of vindesine formed with sulfuric acid. These salts are the hemisulfate, monosulfate and disulfate salts. The dissociation constant of sulfuric acid is such that, unless a strong base is present, the sole ionization of importance is EQU H.sub.2 SO.sub.4 .revreaction.H.sup.+ +HSO.sub.4.sup.-
Vindesine has three basic groups, those at N-9, N-6 and N-1, but titration of vindesine shows only two titratable basic groups, probably at N-9 and N-6. In the monosulfate salt, probably one mole of bisulfate (HSO.sub.4.sup.-) and one mole of vindesine react, the salt forming on the most basic amine group. The hemisulfate is formed from one mole of sulfuric acid and two moles of vindesine. In the disulfate, two of the basic amine groups in vindesine react with bisulfate ions, giving a 1:2 ratio of base to acid.
In transplanted tumor systems in animals, vindesine has shown an activity approaching that of vincristine although potentially lacking some of the neurological side-effects which accompany the clinical use of the latter drug. Vindesine is now undergoing a world-wide clinical trial and so far appears in early tests to be active against certain leukemias and lymphomas, and against both small cell and non-small cell carcinomas, particularly in conjunction with cis-platinum.
Vinblastine and vincristine, two vinca alkaloids related to vindesine, now being marketed as oncolytic agents, are formulated as sulfate salts for use in intravenous administration to patients suffering from various neoplasms. The formulations are freeze dried and reconstituted by adding water just prior to use. In such a formulation, the drug should go into solution rapidly and completely. As previously stated, titration of vindesine base with dilute sulfuric acid and then evaporating the resulting solution to dryness yielded a salt which was electrostatic and hygroscopic (difficult to handle) and its stability was unsatisfactory on storage.
It is an object of this invention to provide a method for the preparation of a vindesine salt which yields a product of good shelf stability, which is easy to handle, and which reconstitutes rapidly in water to form a solution.


A catch thread device is provided for a sewing machine with a scanning element controlled by the upper thread in the rhythm of sewing. The scanning element triggers a signal for the operator and/or for switching off the drive of the sewing machine via an electronic control circuit in the case of a thread break. The catch thread device includes a support fastened to the housing in the sewing machine as well as a pivotable switching lever. The pivotable switching lever is pretensioned and mounted in the support and is connected to the scanning element extending into the course of the upper thread between an eye of the needle and a thread guide of a thread lever of the sewing machine. The scanning element is connected to a magnet which is arranged adjacent to a Hall IC (integrated circuit) fastened to the support wherein the Hall IC is connected via lines to the control circuit for evaluating the signals triggered by the magnet in the Hall IC during the movement of the switching element.

The prior-art catch thread devices of this type have switching means, which subject the thread to a high mechanical stress and/or their contacting scanning elements are arranged such that they get dirty easily and therefore operate incorrectly after a certain amount of use. In addition, they have a rather complicated design.


The present invention is directed to dynamically adjusting the threshold of a magnetic flux sensitive comparator to permit matching of circuit elements for use in A/D converters. For example, comparator threshold variations can be adjusted or programmed to compensate for variations in device components such as resistors. By overcoming parameter matching problems, superconductive A/D converters designed in accordance with the present invention can provide relatively high bandwidth and sampling rates.

1. Field of the Invention
The present invention relates generally to signal processing. More particularly, the invention relates to circuits and methods for analog-to-digital (A/D) conversion using a threshold comparator which includes superconducting devices.
2. State of the Art
Known signal processors include comparators for processing analog signals into digital signals. To address the need for faster, more accurate signal processing, A/D converters have been proposed which include comparator circuits formed with superconducting elements, such as Josephson junction elements (i.e., Josephson junctions).
Josephson junctions are described in a document entitled "Superconducting electronics", Physics Today, February 1981 by Donald G. McDonald, the disclosure of which is hereby incorporated by reference in its entirety. As described therein, Josephson junctions are devices which exploit the concept of magnetic flux quantization. Generally speaking, magnetic flux quantization refers to the ability of superconducting loops, or rings, to trap the magnetic field of a permanently circulating supercurrent.
Josephson junctions are typically formed from two thin films of superconducting metals separated by a thin insulating layer. An electrical current is conducted across the two thin films with zero voltage drop provided the current is below a predetermined maximum level (e.g., approximately lmA) referred to as the "critical current".
Comparator circuits formed with Josephson junctions generally fall into one of two classes: those that directly detect injected currents, and those that detect magnetic flux. Examples of the former include a single Josephson junction sampling gate and a pair of Josephson junctions operated in a differential mode. Examples of the latter include Superconducting Quantum Interference Devices (i.e., SQUIDs) and Quantum Flux Parametrons (i.e., QFPs).
A SQUID is typically formed as a superconducting loop interrupted by two Josephson junctions. Maximum current through the superconducting loop occurs when either junction reaches its critical current. Because the maximum current is a periodic function of magnetic flux through the SQUID, these devices provide a finely graded measuring scale for magnetic flux detection. The frequency with which the maximum current is detected (i.e., the frequency with which a voltage drop is detected across at least one Josephson junction) represents a measure of magnetic flux through the SQUID.
A document entitled "A Single-Chip SQUID Magnetometer", IEEE Transactions On Electron Devices, Vol. 35, No. 12, December 1988 by Norio Fujimaki et al. further describes a SQUID magnetometer for quantizing and permanently storing flux in a superconducting loop. The SQUID magnetometer includes a SQUID sensor which changes from a zero-voltage state to a finite voltage state (e.g., approximately lmV) when an AC bias current pulse crosses a threshold value. The threshold value is a function of magnetic flux coupled to the SQUID and depends upon characteristics of the SQUID sensor (i.e., the inductance, the Josephson junction critical currents and the location of the bias current injection point).
A known QFP used for polarity discrimination of an input signal is disclosed in U.S. Pat. No. 4,916,335 (Goto et al), the disclosure of which is hereby incorporated by reference in it entirety. See also "Basic Operations of the Quantum Flux Parametron", Harada, Y. et al., MAG-23, September 1987, p. 3801. Like the SQUID, a QFP typically includes a superconducting loop interrupted by two Josephson junctions for amplifying weak magnetic flux. As the center node inductance of a QFP is increased, its functional behavior approaches that of a SQUID.
Single pass Josephson junction A/D converters have been designed using SQUIDs with two and three Josephson junctions (see, for example, "Superconducting A/D Converter Using Latching Comparators", C. A. Hamilton et al., IEEE Tran. Magn., vol MAG-21, pp. 197-199 and "Analog Signal Processing With Josephson Junctions: Analog to Digital Conversion", Spargo et al., Extended Abstracts of the 1987 International Superconductivity Electronics Conference, Aug. 28, 1987, Tokyo, pp. 319-334). Single pass A/D converters are attractive because of their increased conversion speed relative to known multiple pass A/D converters (e.g., successive approximation and parallel feed-forward A/D converters). However, implementation of a fully parallel A/D converter, which requires 2.sup.n -1 comparators for n bits of resolution has not been practical in superconductive circuits because of the tight tolerance required in the components. (See, for example, G. S. Lee and D. A. Petersen, Superconductive A/D Converters, Proceedings of the IEEE, 77(8) August 1989, P. 1264).
The foregoing limitations can be traced to a general problem with implementing high resolution converters; i.e., an inability to produce devices with uniform characteristics. For example, a significant barrier to making superconductive A/D converters has been the difficulty in matching circuit elements, such as resistors and Josephson junctions.

Analog-to-digital converter circuits and methods using superconductive elements


A screen printing machine has a bearing supporting a first arm structure for rotation about a vertical axis, the first arm structure comprising first arms equiangularly distributed about the vertical axis and extending radially outwardly of the vertical axis. The first arms each carry, at a free outer end thereof, a printing screen support platen. A second arm structure has second arms equiangularly distributed about the vertical axis and extending radially outwardly of the vertical axis, the second arms each carrying, at a free outer end thereof, a squeegee mechanism and a printing screen support for holding printing screen below the squeegee mechanism. An indexing drive rotates the first arm structure stepwise around the vertical axis so as to position the platens in succession in registry with the squeegee mechanisms; and interengageable pairs of connectors are provided on the first and second arms for forcibly connecting the first arms to the second arms, to counteract bending of the arms during the operation of the squeegee mechanisms.

1. Field of the Invention
The present invention relates to screen printing machines and is useful, in particular, for rotary machines for printing on T-shirts and the like.
2. Description of the Related Art
It has previously been proposed to construct a screen printing machine, for printing T-shirts, having a first set of arms extending radially outwardly of a central, vertical axis and carrying, at their free ends, platens for supporting T-shirts, with a second set of radially extending arms located above the first set. An indexing mechanism rotates the first set of arms, in a stepped manner, so that each of the first arms is brought, in succession, beneath each of the second arms.
The free ends of the second arms carry printing screen holders for gripping and retaining printing screens, together with squeegee mechanisms located above the printing screen holders for performing a squeegee action on the printing screens.
In operation of such a device, the T-shirts are fitted over the platens and the first set of arms are then rotated to bring each T-shirt beneath each of the printing screens, in succession. The rotation of the first set of arms is interrupted, after each step in the rotation, and the first set of arms are then raised so as to press the T-shirts against the undersides of the screens, whereupon the squeegee mechanisms are operated.


A series of touch panel key entries may be secured by shuffling touch entry coordinates. In one embodiment, the entries may be secured by applying a shuffling algorithm that replaces the true coordinates with other incorrect coordinates. Then the correct data may be reassembled in a secure environment.

This relates generally to computers and, particularly, to securing computer input data from malware.
Malware is software placed on a computer without the user's permission. The malware may be used by unscrupulous parties to obtain secure information. That secure information can then be used to compromise bank accounts and other limited or controlled access files and web pages. For example, when the user enters a code to access a bank account, the malware may trap the key entries on a touch screen and then use those key entries to transfer money from the user's bank account to a bank account controlled by the parties sponsoring the malware.


A method for assembling a tank, including: providing a plastic first shell, a plastic second shell with an opening, and at least one connecting member with a plastic end part configured to be arranged in or around the opening, the first and second shell delimiting an internal volume of the tank, and the connecting member being dimensioned for connecting the first and second shell in the internal volume of the tank; welding a circumference of the first shell to a circumference of the second shell; arranging the end part in or around the opening; and connecting the end part of the connecting member to a wall part of the second shell by heating an external area of the second shell surrounding the opening and/or by heating the end part of the connecting member.

Fuel tanks assembled from a two plastic shells are known, and may comprise a stabilizing column or wall in the internal volume of the tank in order to limit deformations of the tank. Traditionally fuel systems in passenger vehicles are designed to hold a specific amount of liquid fuel at a pressure essentially the same as the ambient pressure. With the introduction of Hybrid vehicles and more specifically Plug in Hybrids, which are designed such that they could potentially go several months without using fuel, it is in the interest of the system designers to hold pressure inside the fuel tank to limit the emissions that could potentially bleed through the activated carbon canister due to diurnal cycles. In addition, holding pressure ensures that the composition of the fuel stays the same during storage. However, the tanks must be made resistant to this internal pressure. Therefore tank reinforcement can be realized by linking two opposite tank surfaces with each other using an internal pillar.
It is known to form a stabilizing pillar or wall using a first pillar or wall part that is integrally moulded with the first plastic shell and a second pillar or wall part that is integrally moulded with the second plastic shell. When welding the first shell along its perimeter to the second shell, at the same time, the first pillar or wall part may be connected (e.g. by welding or by a snap connection, see DE 102009036911) to the second pillar or wall part in order to form the stabilizing pillar or wall in the internal volume of the tank. In the case of welding this is a complex and delicate operation as the first and second pillar or wall parts are not easily accessible. The reinforcement pillars or walls are typically at a distance from the perimeter welding path of the first and second shells, resulting in the need for complex welding tools. Also, a very delicate controlling of the welding operation is required as the dimensional tolerance on the moulded first and second shells may lead to interference between the first and second shell at a number of locations and lack of contact at a number of other locations.

Tank with internal connecting member and method for assembling such a tank

PLASTIC OMNIUM ADVANCED INNOVATION AND RESEARCH


The invention provides an umbrella support bracket for holding an umbrella over the head of a user who is loading or unloading the trunk of an automobile. The device comprises a central telescoping adjustable post having an angularly adjustable arm on which to mount the umbrella. The adjustable telescoping post is clampable in its adjusted length. The post has upper and lower pads to prevent physical damage to the parts contacted and to prevent sliding. The angularly adjustable arm has a resilient clip to hold the shaft of the umbrella, a sling to hold the handle of the umbrella, and two straps to secure the grip on the umbrella. After initial adjustments are accomplished, mounting and removal may be done with one hand while holding an umbrella in the other hand.

Many devices have been designed for the support of an umbrella, ranging from a patio table with a built-in umbrella stand to a hat with an umbrella top surface. Some are intended for protection from rain, some for sun, and some are usable for either element. Generally, an umbrella may be described as having a shaft with an upper and a lower end, a handle being mounted on the lower end and a canopy being mounted on the upper end.
One situation in which an umbrella is useful and in which the umbrella should be supported without use of the hands of the person being protected arises when a person is packing or unpacking the trunk of an automobile during rain or snow. In this situation, it is often necessary to use two hands to maneuver the cargo being loaded or unloaded. In particular, in the case of a salesman who may store literature and samples of merchandise in the car's trunk, a device which would support an umbrella over the head of the salesman while leaving both of the saleman's hands free would be a useful improvement in the art.
Therefore, it is an object of the present invention to provide a device to support an umbrella adjacent the open trunk of an automobile to protect an individual who is loading or unloading the trunk from precipitation.
It is an additional object of the invention to provide a device to support an umbrella adjacent the open trunk of an automobile which device is capable of adjustment to fit the trunk opening size.
It is an additional object of the invention to provide an umbrella support which is capable of adjustment in the position of the umbrella relative to the individual so as to provide optimum protection from precipitation.
It is an additional object of the invention that an adjustable umbrella support be provided which is capable of being mounted or removed without disturbing the adjustment settings.
The foregoing and other objects will become apparent to those skilled in the art through the disclosure following.


Optical films are described having a polymerized microstructured surface that comprises the reaction product of a polymerizable resin composition comprising at least one polymerizable ethylenically unsaturated triphenyl monomer. Also described are certain triphenyl (meth)acrylate monomers and polymerizable resin compositions.

Certain microstructured optical products, such as described in U.S. Pat. Nos. 5,175,030 and 5,183,597, are commonly referred to as a "brightness enhancing films". Brightness enhancing films are utilized in many electronic products to increase the brightness of a backlit flat panel display such as a liquid crystal display (LCD) including those used in electroluminescent panels, laptop computer displays, word processors, desktop monitors, televisions, video cameras, as well as automotive and aviation displays.
Brightness enhancing films desirably exhibit specific optical and physical properties including the index of refraction of a brightness enhancing film that is related to the brightness gain (i.e. "gain") produced. Improved brightness can allow the electronic product to operate more efficiently by using less power to light the display, thereby reducing the power consumption, placing a lower heat load on its components, and extending the lifetime of the product.
Brightness enhancing films have been prepared from high index of refraction monomers that are cured or polymerized. Halogenated (e.g. brominated) monomers or oligomers are often employed to attain refractive indices of for example 1.56 or greater. Another way to attain high refractive index compositions is to employ a polymerizable composition that comprises high refractive index nanoparticles such as described in U.S. Publication Nos. 2006/0204745, 2006/0210726, 2006/0204676, and US 2006/0128853.

Triphenyl monomers suitable for microstructured optical films