A method of generating a tomography image includes performing a depth scan on one spot on a surface of a subject using modulated light received from a spatial light modulator, obtaining depth scan data for each of a plurality of patterns of the spatial light modulator by repeating the depth scan on the spot for each of the plurality of patterns, forming a matrix R representing a vector space based on a correlation of signal values of the depth scan data for each of the plurality of patterns, performing a matrix decomposition on the matrix R, dividing the vector space into a noise subspace and a signal subspace based on a matrix obtained by the matrix decomposition, constructing a vector space based on either one or both of components of the signal subspace and components of the noise subspace, and generating a tomography image based on the reconstructed vector space.

1. Field
This application relates to methods and apparatuses for generating a tomography image using light.
2. Description of Related Art
Light is currently being used in various fields. In the biological and medical fields, light is used to observe tissues or cells, diagnose disease, or perform laser surgery in various ways.
By using various characteristics of light, such as monochromaticity, coherence, and directionality, it is possible to capture high-resolution images of living tissues or cells, and thus observe the internal structures of human bodies and living bodies non-invasively. The high-resolution images make it possible to identify the cause, location, and progression of various kinds of disease in the medical field. The high-resolution images include tomography images of human bodies or living bodies captured using light that penetrates into the human bodies and living bodies.

Apparatus and method for generating tomography image

Korea Advanced Institute of Science and Technology


A refueling system, comprising a drum rotatable to wind and unwind a hose, a carriage guiding the hose and lineally displaceable along a shaft parallel to the longitudinal direction of the drum so as to follow the movement of the hose along the drum. The shaft allows the displacement of the carriage along its length. A motor is coupled to the carriage and displaces the carriage along the shaft. A first position sensor communicates with the carriage to obtain its position. A second position sensor communicates with the drum to obtain the position of the hose. A control system is coupled to the first and the second sensor, to compare their obtained positions and to operate the motor.

Hose and drogue refueling systems consist of a drum for winding/unwinding the hose during the system operation. Typically, several layers are required to wrap the hose in the drum. Due to the internal construction of the hose, which provides high rigidity, an auxiliary system is required to laterally guide the hose for a proper winding/unwinding in the drum. This system is called a service carriage.
The service carriage system is typically geared to the drum and the movement of both is synchronized by a series of gears. The service carriage follows the hose movement with a linear displacement, changing direction at the end of each hose layer by an Archimedean shaft.
Therefore, the known hose and drogue refueling system comprises:
a drum configured to rotate in a first direction to wind a hose and in a second direction to unwind the hose,
a carriage, called a service carriage, configured to guide the hose as the hose is wound and unwound, the carriage lineally displaceable along a shaft parallel to the longitudinal direction of the drum so as to follow the movement of the hose along the drum, and
the mentioned shaft that is configured to allow the displacement of the carriage along its length.
The movement between the drum and the service carriage is fixed and could not be changed between hose layers. A compromise is required during the design process in order to achieve a proper wrap of the different layers.
This compromise causes a not perfect winding between layers. This can induce wear on the hose, a less optimal use of the drum and additional mechanical redesign to adapt the system to alternative configurations (for example, change of hose diameter).
The mechanical system forces a synchronization between the drum and service carriage movements. This system does not allow changing the movement logic between each layer or stop the movement of the service carriage.


A oral irrigator device (10) for cleaning teeth, including a system (14) for producing a stream of liquid/air bursts and a nozzle (16) connected to the system, and through which the stream of liquid/air bursts are directed. The nozzle can include a guidance tip (26) including a base portion (30), a tip portion (28), and an orifice (31) through which the stream of liquid/air bursts exits at a flow output pattern, and a flow output pattern selection mechanism (90, 90′) connected to or positioned within the guidance tip. A flow output pattern selection mechanism can be configured to be selectively actuated and to vary, upon the actuation the flow output pattern between a first flow output pattern to at least a second flow output pattern.

Periodontal diseases are thought to be infectious diseases caused by bacteria present in dental plaques. Removal of dental plaques is highly important for the health of oral cavities. Dental flossing can help with reaching and cleaning areas where plaque resides (including interproximally or between teeth) that cannot be reached through tooth brushing alone. However, dental flossing can become tedious and may not effectively remove all interproximally located plaque due, in part, to the shape/structure of a user's teeth.
Liquid/air burst dental appliances designed for home use are known, and have been developed as an alternative (or at least as a complement) to flossing. Many of these conventional appliances require the user to properly locate the spray nozzle tip of the appliance relative to the teeth, so that the spray reaches the desired area of the teeth. It is a particular challenge for the user to locate the spray properly relative to the interproximal spaces between the teeth. Generally it is more difficult to position the spray tip correctly for the back teeth than for those teeth which are closer to the front, because the spray generally cannot be felt by the user and the back teeth cannot be easily seen.
Moreover, the spray tip may be positioned incorrectly when attempting to clean the interproximal regions of the teeth. Incorrect positioning can lead to reduced or poor cleaning in the interproximal areas. Certain liquid/air burst dental appliances have been developed, which include a guidance tip structure configured to provide both correct alignment and orientation of the spray tip to permit the spray to properly enter/engage the interproximal areas. However, such appliances may be more difficult to adjust while in active use.
Accordingly, there is a need in the art for liquid/air burst dental appliances that conform to, address, and are easily adjustable to clean a wide variety of unique teeth structures.

Adjustable assembly and nozzle for providing various liquid/air output flow patterns


A splicing machine (10) to join strip material, the strip material being intended to be delivered to a packaging machine. The splicing machine (10) supports two rolls of strip material on supports (12, 13), with the strip material being taken from one of the rolls. When the material taken from one roll becomes depleted the trailing end of the material is engaged by a first web securing member (18). A second web securing member (19) engages and retains the leading portion of the next roll. The trailing portion of the first roll is then joined to the leading portion of the next roll so that the strip material is continuously delivered to an associated packaging machine.

Packaging machines receive strip bag material formed of plastics material, and form therefrom bags containing a product.
The strip bag material is delivered by a film delivery device that generally supports two rolls of the material. The packaging machine is stopped and the trailing portion of the depleted roll is joined to the leading portion of the next roll to be used. The join is effected manually.
The above discussed previous apparatus and method for joining the bag material (plastic film) has disadvantage that the packaging machine is inoperative for a considerable time while the bag material is being joined.


A continuous microwave freeze-drying device comprises a vacuum water-trapping system (1), a microwave shield plate (2), a microwave bin (6) and a freeze-drying bin (5) located in the microwave bin (6), wherein the freeze-drying bin (5) comprises an upper bin opening, a left bin wall, a right bin wall and a bottom bin wall, and the left, right and bottom bin walls are all made from nonmetal wave transmitting materials, such as polyfluortetraethylene, polyethylene, polypropylene or quartz glass. The device solves the technical problem of freeze-drying failure caused by glow discharge of microwave under freeze-drying environment.

Freeze-drying technology is a process by which moisture contained in a moisture-containing material is frozen to be discharged after being directly transformed from solid phase into gas phase so as to obtain a dry product, also known as lyophilization. Hot plates or infrared radiation plates are generally used for providing sublimation heat in traditional freeze-drying methods, traditional freeze-drying methods are widely applied to food, medicine and new material processing fields, but severely restrict further development of freeze-drying technologies due to their low drying rate, long cycle, complex equipment, high manufacturing cost and huge power consumption.
Microwave freeze-drying is a new technology combining high-efficiency microwave radiation heating technology and vacuum freeze-drying technology, allows water molecules of the material to vibrate and rub against each other under the action of a microwave field by 3D heating characteristic of microwave, thus converting electric energy into latent sublimation heat for moisture sublimation. Compared with traditional freeze-drying methods, the biggest advantages of microwave freeze-drying include quick drying speed and high thermal efficiency, and the freeze-drying speed is 4-20 times of that of a conventional heating method.
The major technical problem of the microwave freeze-drying technology is glow discharge of microwave under vacuum environment, vacuum pressure for freeze-drying is generally at 1-610 Pa, and the vacuum pressure is the pressure range in which disruptive discharge easily occurs in the microwave field. In practical application, glow discharge of microwave frequently occurs in the freeze-drying bin, resulting in gas ionization in the freeze-drying bin, thus causing harmful material change, effective heating power loss of microwave and freeze-drying failure. No large-scale industrial application of microwave freeze-drying technology is found at home and abroad through literature retrieval.
The Chinese invention patent application 200910181720.1 titled "Double-bin differential pressure microwave vacuum freeze-drying device" with publication No. of 101608862 and publication date of Dec. 23, 2009 discloses a microwave freeze-drying device, a freeze-drying bin thereof is separated into a first bin and a second bin by a transmitting baffle wall, and a magnetron is located in the first bin, with relative vacuum degree smaller than discharge critical value, and a material loading device is located in the second bin and connected with a cold trap by a shield overflow plate. The second bin is also a vacuum space, frequent discharge of microwave still occurs in the space, the method only helps reduce the probability of glow discharge, practices show that the simple method of separating the freeze-drying bin into two bins of different pressures can not fundamentally prevent occurrence of vacuum discharge, can not be used under industrial environment, and has difficulty in implementation.
The Chinese invention patent application 200910059544.4 titled "Continuous microwave freeze-drying system" with publication No. of 101922855A and publication date of Dec. 22, 2010 discloses a continuous microwave freeze-drying device using a combined microwave freeze-drying bin. The invention comprises a microwave vacuum freeze-drying device, a vacuum water-trapping device, a vacuum feed device and a vacuum discharge device, the microwave vacuum freeze-drying device is provided with a combined freeze-drying bin consisting of an atmospheric microwave chamber and a vacuum microwave chamber, the atmospheric microwave chamber is separated from the vacuum microwave chamber by a microwave transmitting vacuum baffle plate, the vacuum microwave chamber and the vacuum water-trapping device is connected by a vapor channel, and the vacuum microwave chamber is separated from the vapor channel by a porous ventilating microwave shield plate. The technology core is to separate the freeze-drying bin into the atmospheric microwave chamber and the vacuum microwave chamber by a microwave transmitting material to solve easy discharge of microwave under vacuum environment. Experiments show that the method of separating the freeze-drying bin into the vacuum bin and the atmospheric microwave bin by a microwave transmitting material reduces the probability of discharge to some extent. However, as the freeze-drying bin is only separated by the microwave transmitting material, that is, one wall of the freeze-drying bin is a metal conducting plate, two walls are metal plates and another wall is of microwave transmitting material, in this way, microwave is reflected by three metal bin walls of the freeze-drying bin under vacuum environment, thus resulting in non-uniform microwave field, non-uniform drying of materials, low product yield and poor quality. Meanwhile, the feed belt and the return belt of the belt conveying system are located in the freeze-drying bin, increasing manufacturing difficulty and cost, and making operational failure rate high and implementation difficult.

Continuous microwave freeze-drying device

SICHUAN HOPE MICROWAVE SCIENCE & TECHNOLOGY CO., LTD.


In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer. A P-type collector-contact/base leakage prevention layer, which has a higher impurity concentration than said P-type collector layer, is formed at least in that region of said P-type collector layer which is in contact with said oxide insulating layer, so as to prevent the generation of a leakage current between said P-type collector contact layer and said N-type base layer.

The present invention relates to a semiconductor apparatus in which a vertical NPN bipolar transistor, a vertical PNP bipolar transistor, or a CMOS transistor is integrated on a semiconductor substrate and to a method of manufacturing the same. It also relates to a method of manufacturing a semiconductor apparatus having a capacitor provided on a semiconductor substrate and used together with a bipolar transistor.
In recent years, there has been a demand for a high-density, high-speed semiconductor apparatus which consumes less power.
A representative of such conventional semiconductor apparatuses is an NPN bipolar transistor of walled-emitter type. The NPN bipolar transistor has a structure in which its emitter region is surrounded by an insulating film so that at least a part of the emitter region is in contact with its periphery. The structure not only enables the reduction of junction capacitance between its emitter and base and the miniaturization of the transistor due to the self-aligning formation of its emitter and base, but also fulfills the requirements of high speed, high density, and low power consumption imposed on the transistor. An example of the NPN bipolar transistor of walled-emitter type is disclosed in, e.g., Japanese Laid-Open Patent Publication No. 1-281769.
In an NPN bipolar transistor of such structure, however, since the impurity introduced into its base region by ion implantation is absorbed by the insulating film, a depletion layer is formed at the interface of the base region with the insulating film due to the lowering of impurity concentration. As a result, the N.sup.- -type emitter region and N.sup.- -type collector region are connected to each other via the depletion layer, resulting in the undesirable generation of a leakage current between the emitter region and collector region.
In a semiconductor apparatus having a PNP bipolar transistor on a semiconductor substrate, on the other hand, the impurity implanted in the collector region is absorbed by the insulating film at the interface of the P.sup.+ -type collector region with the insulating film, so that a depletion layer is formed at the interface of the collector region with the insulating film. In the depletion layer, there exist a large number of interfacial charges. Holes in the foregoing depletion layer diffuse into the collector region, so that the foregoing depletion layer is connected to the depletion layer between the collector region and base region. Consequently, the depletion layer containing a large number of interfacial charges, which will as a current source, is formed between the collector contact region and base region, so that the leakage current is disadvantageously generated between the collector contact region and base region.
In a semiconductor apparatus having an N-channel MOS transistor on a semiconductor substrate, on the other hand, the impurity introduced into the P-type region, positioned between the N-type source region and N-type drain region, is absorbed by the insulating film at the interface of the foregoing P-type region with the insulating film. As a result, a depletion layer is formed at the interface of the foregoing P-type region with the insulating film due to the lowering of impurity concentration. Consequently, the source region and drain region are connected to each other via the depletion layer, resulting in the undesirable generation of a leakage current between the source region and drain region.
Thus, the leakage currents are generated in the respective portions stated above of the conventional semiconductor apparatuses in which the vertical NPN bipolar transistor, vertical PNP bipolar transistor, and CMOS transistor are integrated on the semiconductor substrates, resulting in the lowering of the production yields of the transistors.
Below, there will be described a conventional method of manufacturing a semiconductor apparatus having a capacitor provided on a semiconductor substrate and used together with a bipolar transistor.
As shown in FIG. 50A, an N.sup.+ -type buried layer 202 and an N.sup.- -type epitaxial layer 203 are sequentially formed on a P-type semiconductor substrate 201. A thermal oxide film 204 is then formed on the N.sup.- -type epitaxial layer 203 by selective oxidation. Thereafter, an N.sup.+ -type diffusion layer 205, which will serve as a lower capacitor electrode, is formed using the thermal oxide film 204 as a mask.
Next, as shown in FIG. 50B, a CVD-SiO.sub.2 film 206 is formed, which is then subjected to etching using a first resist pattern 207 (photomask C1), thereby forming a capacitor insulating film formation region 208.
Next, as shown in FIG. 50C, a silicon nitride film 209, which will serve as a capacitor insulating film, is deposited thereon, followed by the formation of a second resist pattern 210 (photomask C2) on that portion of the silicon nitride film 209 which corresponds to the capacitor insulating film formation region 208 and to its vicinity. Thereafter, the silicon nitride film 209 is subjected to etching using the second resist pattern 210 as a mask.
Next, as shown in FIG. 50D, a third resist pattern 211 (photomask CW) is formed on the CVD-SiO.sub.2 film 206, so that the CVD-SiO.sub.2 film 206 is subjected to etching using the third resist pattern 211, thereby forming a contact region for the lower capacitor electrode.
Next, as shown in FIG. 50E, the third resist pattern 211 is removed and then an upper capacitor electrode 213 and the lower capacitor electrode 214 are formed by a normal wiring process using aluminium, thereby completing a capacitor.
However, the conventional method of manufacturing a semiconductor apparatus requires the process of forming a resist pattern to be performed three times (using the photomasks C1, C2, and CW) between the formation of the N.sup.+ -type diffusion layer 205 serving as the lower capacitor electrode and the formation of the contact region 212 for the lower capacitor electrode. Accordingly, the number of steps required for manufacturing the semiconductor apparatus and manufacturing cost are disadvantageously increased.
To reduce the number of steps in the conventional method of manufacturing a semiconductor apparatus, the step of etching away the silicon nitride film 209 using the second resist pattern 210 may be omitted. Below, such a manufacturing method for a semiconductor apparatus will be described.
As shown in FIG. 51A, after the deposition of the silicon nitride film 109 serving as the capacitor insulating film, the silicon nitride film 209 and CVD-SiO.sub.2 film 206 are etched away using the third resist pattern 211, thereby forming the contact region 212 for the lower capacitor electrode.
Next, the third resist pattern 211 is removed and then the process of forming aluminium wiring is performed. In general, the SiO.sub.2 film 206 is subjected to wet etching prior to the deposition of aluminium for the purpose of removing the natural oxide film of the contact region 212 for the lower capacitance electrode, so that the contact resistance between the aluminium and N.sup.+ -type diffusion layer 205 is reduced. In this case, however, side etching of the CVD-SiO.sub.2 film 206 occurs in the contact region 212 for the lower capacity electrode, as shown in FIG. 51B, resulting in the formation of an overhang portion 215.
Next, when the upper capacitor electrode 213 and lower capacitor electrode 214, each being made of aluminium, are deposited as shown in FIG. 51C, the step coverage with aluminium deteriorates significantly in the overhang portion 115, so that the amount of aluminium deposited in the overhang portion 115 becomes extremely small. Consequently, a broken portion 116 of the aluminium wire is generated in the overhang portion 115, as shown in FIG. 51C.

Method of manufacturing a semiconductor apparatus


Embodiments are generally directed to 3D high-inductive ground plane for crosstalk reduction. An embodiment of a printed circuit board includes a first signal trace and a second signal trace on a first layer, wherein the first signal trace and second signal trace are non-intersecting; a second layer below the first layer; a third layer below the second layer; and a three-dimensional (3D) ground plane, the 3D ground plane including a first plurality of segments on the third layer, a second plurality of segments on the second layer, and a plurality of metal vias to connect the first plurality of segments and the second plurality of segments in the ground plane.

In the operation of electronic devices, which are continuing to be reduced in size while also being operated at higher speeds, crosstalk noise is an increasing problem. In particular, far-end crosstalk is generally associated with microstrip (MS) routing configuration in printed circuit board (PCB) design. Far-end crosstalk (FEXT) refers to interference at a far end of a circuit, while near-end crosstalk (NEXT) refers to crosstalk at a near-end of the circuit.
As signaling speed increases with every new generation of high-speed input/output (I/O) interfaces, crosstalk noise has become an increasingly significant factor in constraining the physical aspects of PCB design, such as shorter lengths that are supportable and additional PCB layer counts.
Conventional solutions to mitigate FEXT include allocating more lane-to-lane spacing to minimize crosstalk coupled from one signal lane to adjacent one. However, the drawback of the conventional approach is that more PCB real estate is needed, thus requiring a larger system form-factor, and thus interfering with miniaturization efforts.


Methods, systems, and apparatuses are described for the assembly of integrated circuit (IC) packages. A substrate panel is formed that includes a plurality of substrates. The substrate panel is singulated to separate the plurality of substrates. At least a subset of the separated substrates is attached to a surface of a carrier. One or more dies are attached to each of the substrates on the carrier. The dies and the substrates are encapsulated on the carrier with a molding compound. The carrier is detached from the encapsulated dies and substrates to form a molded assembly that includes the molding compound encapsulating the dies and substrates. A plurality of interconnects is attached to each of the substrates at a surface of the molded assembly. The molded assembly is singulated to form a plurality of IC packages. Each IC package includes at least one of the dies and a substrate.

1. Field of the Invention
The present invention relates to integrated circuit package assembly.
2. Background Art
Integrated circuit (IC) chips or dies are typically interfaced with other circuits using a package that can be attached to circuit board. One such type of IC die package is a ball grid array (BGA) package. BGA packages provide for smaller footprints than many other package solutions available today. One type of BGA package has one or more IC dies attached to a first surface of a package substrate, and has an array of solder ball pads located on a second surface of the package substrate. Solder balls are attached to the solder ball pads. The solder balls are reflowed to attach the package to a circuit board.
An advanced type of BGA package is a wafer-level BGA package. Wafer-level BGA packages have several names in industry, including wafer level chip scale packages (WLCSP), among others. In a wafer-level BGA package, the solder balls are mounted directly to the IC die when the IC die has not yet been singulated from its fabrication wafer. As such, wafer-level BGA packages do not include a package substrate. Wafer-level BGA packages can therefore be made very small, with high pin out, relative to other IC package types including traditional BGA packages.
For IC dies used in wafer-level BGA packages, routing is typically formed directly on the dies. The routing is formed on a surface of the dies to route signals of the die pads to locations where the solder balls attach to the die. Fan-in routing and fanout routing are two different types of routing that may be formed on the dies. Fan-in routing is a type of routing that is formed only within the area of each semiconductor die. Fanout routing is a type of routing that extends outside of the areas of the semiconductor dies. For instance, for each die, a material may be applied around the area of die semiconductor material, and the applied material is solidified. Fanout routing may then be applied to the die that extends over the applied material beyond the area of the die. As such, fanout routing provides advantages, including enabling routing to be performed over a larger area, providing more room for signal traces. However, current fanout routing technology requires very heavy capital investment. Such capital investment does not provide cost benefits in the short run, although such investment may provide cost competitiveness in the long run. Furthermore, the current fanout routing technology is constrained with respect to capacity, due to the current trend in the industry to migrate more and more devices into wafer level packaging. As such, while the cost of fanout wafer-level manufacturing is decreasing, it has been difficult for fanout wafer-level manufacturing to keep up with the increasing pressure to reduce prices and to maintain profit margins.

Chip scale package assembly in reconstitution panel process format


Processes for making photosensitive organic pigments for use in imaging members, specifically processes for making photosensitive phthalocyanine pigments having a specific nanocrystal form. Embodiments include a copper phthalocyanine nanocrystal with good charge generation for use in the formulation of a charge generating layer and narrow particle size distribution.

Electrophotographic imaging members, e.g., photoreceptors, typically include a photoconductive layer formed on an electrically conductive substrate. The photoconductive layer is an insulator in the substantial absence of light so that electric charges are retained on its surface. Upon exposure to light, charge is generated by the photoactive or photosensitive pigment, and under applied field charge moves through the photoreceptor and the charge is dissipated.
In electrophotography, also known as xerography, electrophotographic imaging or electrostatographic imaging, the surface of an electrophotographic plate, drum, belt or the like (imaging member or photoreceptor) containing a photoconductive insulating layer on a conductive layer is first uniformly electrostatically charged. The imaging member is then exposed to a pattern of activating electromagnetic radiation, such as light. Charge generated by the photoactive pigment move under the force of the applied field. The movement of the charge through the photoreceptor selectively dissipates the charge on the illuminated areas of the photoconductive insulating layer while leaving behind an electrostatic latent image. This electrostatic latent image may then be developed to form a visible image by depositing oppositely charged particles on the surface of the photoconductive insulating layer. The resulting visible image may then be transferred from the imaging member directly or indirectly (such as by a transfer or other member) to a print substrate, such as transparency or paper. The imaging process may be repeated many times with reusable imaging members.
An electrophotographic imaging member may be provided in a number of forms. For example, the imaging member may be a homogeneous layer of a single material such as vitreous selenium or it may be a composite single layer containing charge photogenerating and charge transporting compounds and other materials. In addition, the imaging member may be layered. These layers can be in any order, and sometimes can be combined in a single or mixed layer.
Typical multilayered photoreceptors have at least two layers, and may include a substrate, a conductive layer, an optional charge blocking layer, an optional adhesive layer, a photogenerating layer (sometimes referred to as, and used herein interchangeably, a "charge generation layer," "charge generating layer," or "charge generator layer"), a charge transport layer, an optional overcoating layer and, in some belt embodiments, an anticurl backing layer. In the multilayer configuration, the active layers of the photoreceptor are the charge generating layer (CGL) and the charge transport layer (CTL).
As more advanced, higher speed electrophotographic copiers, duplicators and printers were developed, however, degradation of image quality was encountered during extended cycling. The complex, highly sophisticated duplicating and printing systems operating at very high speeds have placed stringent requirements, including narrow operating limits, on the imaging members. Thus, photoreceptor materials are required to exhibit, efficient charge generation and charge transport properties, and structural integrity and robustness so as to withstand mechanical abrasion during image development cycles.
Organic photosensitive pigments are widely used as photoactive components in charge generating layers. One such pigment used in the charge generating layer in electrophotographic devices is phthalocyanine (Pc). Phthalocyanines represent one of the key components of photoreceptors because of their high efficiency of charge generation. As explained, for example, in U.S. Pat. No. 5,164,493, which is hereby incorporated by reference in its entirety, polymorphism or the ability to form distinct solid state forms is well known in phthalocyanines and will affect its photoactive properties. For example, there are several titanyl phthalocyanine (TiOPc) crystal forms, or polymorphs, known to be useful in photoreceptor devices. The control of the crystal form of phthalocyanines, such as TiOPc, is critical for obtaining the desired photoactive properties, such as high photosensitivity.
Standard preparation of phthalocyanines involves synthesis at high temperature, isolation and purification, dissolution in acid followed by subsequent precipitation, and conversion to different crystal structures using organic solvents. The resulting product is expectedly in large aggregates which must be subsequently milled down to form a dispersion. The overall process results in a wide distribution of particle sizes (e.g., generally from about 100 to about 600 nm, depending on the binder and solvent system used). These wide distributions are of concern because it has been observed that the presence of large particles can cause problems such as increased charge-deficient spots (CDS) and print uniformity.
As such, processes for obtaining phthalocyanines for electrophotographic application are generally complex, multi-step processes and therefore the ability of obtaining a consistent final product with all the desired properties, including size distribution, may not be very reproducible.
The term "nanocrystal" is herein generally used interchangeably with the term "nanoparticle."

Process for preparing organic photosensitive pigment


A temporarily mountable strip door system includes a strip mounting frame. The frame has mounting features to enable releasable coupling to an exterior of an opening in a building. A plurality of flexible door strips are affixed to the mounting frame. The system includes means for releasably affixing the mounting frame to the exterior of the opening. A method for controlling climate in a temporarily enclosed space include moving conditioned air from inside a device having a permanent heating, ventilation and air conditioning unit associated therewith through a duct into the temporarily enclosed space. Air is returned air from the temporarily enclosed space to the inside of the device.

1. Field of the Invention
The invention relates generally to the field of flexible panel-type screens and enclosures. More specifically, the invention relates to methods and an apparatus for temporarily enclosing a space such that climate can be controlled in the temporarily enclosed space.
2. Background Art
A strip door is used to provide climate control in an enclosed area, yet allow free passage of humans, vehicles etc into and out of the enclosed area. A strip door is typically formed from a plurality of flexible plastic strips suspended from a mounting device secured to an upper edge of the opening to be sealed by the strip door. The strips may be formed from clear vinyl to enable visibility therethrough.
Strip doors are most commonly used where a great amount of such passage occurs, and where such passage would require that any other type of door be completely opened to effect such passage. In such cases using any other type of door, the cooling/heating systems used to maintain the selected interior climate either would be inadequate to handle the loss/gain in temperature, or such systems would have to be substantially oversized. Typical applications for strip doors include commercial enclosures such as refrigeration docks, air conditioned warehouses, manufacturing facilities where climates are different in different areas due to process requirements, etc.
Prior art strip doors generally have robust design and permanence of the installations. U.S. Pat. No. 3,331,425 to Groves et al. shows a robust, but complicated, high-cost strip door installation which allows for vehicle passage. The strip door attachment means shown in the '425 patent though automated, is not easily installed in a garage or temporary structure location. U.S. Pat. No. 3,809,144 to Garufo discloses strip door means customized for use in conjunction with aircraft hangers. U.S. Pat. No. 4,232,725 to Gidge shows another complicated strip door mounting device which includes many parts, thus making impractical to install and remove in short order. The door shown in the '725 patent focuses on energy efficiencies, vehicular passage and wind concerns. All the foregoing prior art strip door installation means do not allow flexibility in installation and removal and are relatively costly to make.
Typical strip doors known in the art are not adapted for completely temporary installation. It is desirable to have a strip door that could easily be loaded onto a delivery truck along with other temporary structures, for example, "moon walk" or similar portable, inflatable entertainment devices, and that could be used to enable otherwise non-climate controlled spaces such as residential garages to be used as climate-controlled rooms during an event of temporary duration. Using temporarily enclosed spaces in structures built to withstand inclement weather conditions can be far superior to air conditioned tents or the like and can be provided at a considerably lower cost.
Portable blower and conduit means for temporary rerouting of heating, ventilation and air conditioning ("HVAC") are used to provide climate control in enclosed areas such as construction sites, commercial structures under modification, hospitals which may have temporary outages of HVAC and the like. Such portable blower and conduit means, however, are not known to be used as temporary HVAC rerouting inside a permanent structure. It is desirable to have temporary rerouting of HVAC using such blower and conduit means to provide temporary HVAC within certain portions of permanent structures that do not require HVAC all the time. As a specific example, a room such as a residential garage, where HVAC climate control is not ordinarily provided, could be used as a temporary extra room. In such cases, where the garage is so used, it would be desirable to have climate control. An additional, portable HVAC unit could be provided, but such unit would incur additional expense. There is a need to be able to use the HVAC system in the part of the permanent structure having such HVAC system to provide climate control in a temporarily enclosed room within such permanent structure.
Temporarily erected structures, such as tents, may be provided with temporary HVAC climate control. Climate control for such structures known in the art is typically provided by a HVAC unit used for that specific purpose. Having such a separate HVAC unit can be costly, and can reduce extra carrying capacity of vehicles used to transport the structure to its location of use. What is needed is a device to enable climate control within temperary structure that can use a vehicular HVAC system for such purpose.

Temporarily mountable strip door system, especially for temporary climate control of an area


A drive system for a machine is disclosed. The drive system may have an engine, a pump driven by the engine to pressurize fluid, a motor connected to the pump via an inlet passage and an outlet passage, and a traction device driven by the motor. The drive system may also have an operator input device movable from a neutral position through a range to a maximum displaced position to affect a speed of the engine, and a controller in communication with the input device and at least one of the pump and motor. The controller may be configured to gradually adjust a displacement of the at least one of the pump and motor to slow the traction device over a period of time after the operator input device is returned to the neutral position.

Machines such as wheeled compactors, loaders, trucks, and other mobile equipment are used to perform many tasks. To effectively perform these tasks, the machines require an engine that provides significant torque through a transmission to one or more ground engaging traction devices. Such machines usually include mechanical power-shift transmissions that are connected to the engine by way of a mechanical or hydraulic torque converter, which is intended to cushion the connection between the engine and the transmission. When the engine is disconnected from the transmission via the torque converter, for example when the operator desires to terminate acceleration of the machine, naturally occurring friction within the torque converter causes a gradual slowing down or coasting of the machine.
Consequently, operators have grown accustomed to machine coasting upon terminating a request for machine acceleration (e.g., upon releasing an acceleration pedal or lever). For example, a compactor operator may know that the speed of a conventional compactor may slow down by a specific amount over a certain period of time or within a certain distance and, accordingly, control the machine with expectations of the coasting. Therefore, operators have become comfortable using coasting to complete specific tasks.
Recently, however, conventional power-shift transmissions are being replaced by hydrostatic transmissions (hystats). A hystat provides an infinitely variable torque-to-speed output ratio within its overall range through the pairing of a variable displacement pump and a fixed- or variable-displacement motor. Although a hystat is known to have higher efficiency and extended functionality when compared with a power-shift transmission, it does not behave in the manner discussed above with respect to coasting. Specifically, when an operator releases the acceleration pedal or throttle, displacements of the pump and/or motor are immediately neutralized and the machine either continues traveling at about the same speed for an extended period of time (when both the pump and motor are neutralized) or quickly stops (when only one of the pump and motor are neutralized). Therefore, operators must modulate the acceleration lever or pedal to move through intermediate displacement positions in a gradual manner in order to travel at an increasingly slower speed. This can prove very difficult in rough terrain common to many worksites, especially for unskilled operators, and can cause undue operator fatigue. Accordingly, there is a need to gradually slow the speed of a hystat-equipped machine in an alternative manner.
One such method of machine control is described in U.S. Pat. No. 6,341,488 (the '488 patent) of Shimizu et al. that issued on Jan. 29, 2002. The '488 patent describes a hystat transmission having a variable displacement pump paired together with a fixed displacement motor. In order to inhibit an abrupt stop of a vehicle when an operator releases a control arm, the pump is provided with a piston that generates a friction force against a contact plate of the pump. The friction force resists rotation of the pump's swashplate toward the neutral position such that a return spring returns the swashplate to neutral in a smooth manner.
Although the system of the '488 patent may allow for smooth stopping of a hystat-equipped vehicle, it may still be problematic. In particular, the system of the '488 patent may not allow for coasting of the vehicle for extended periods of time. In addition, the system of the '448 patent may lack applicability to a hystat where displacements of both the pump and motor may benefit from coordinated control.
The system of the present disclosure solves one or more of the problems set forth above and/or other problems of the prior art.

Hystat drive system having coasting functionality


A dice game is disclosed. A method of playing a dice game is also disclosed.

Dice games have been around for many years. Popular dice games include, but are not limited to, "craps", baccarat, YAHTZEE™, and others.
Known dice games have one or more shortcomings. Most known dice games are either too complicated for players to understand and/or fail to provide enough excitement to keep a player's interest.
What is needed in the art is a simple dice game, which generates and maintains a player's interest, provides hours of enjoyment, and provides the potential for an exceptional reward for a winning roll of the dice.


The invention relates to a flowability improving agent comprising a combination, calculated on a dry product, of: A) 60-99% by weight of a sulphonated melamine-formaldehyde resin, a sulphonated melamine-urea-formaldehyde resin or a sulphonated naphthalene-formaldehyde resin; C) 0.5-40% by weight of a boron containing polyhydroxycarboxylic acid or a water-soluble salt of such an acid and optionally D) 0.5-30% by weight of a compound with formula EQU Ar O--(R.sub.1).sub.n --R.sub.2. where Ar is unsubstituted or substituted benzene moiety or naphthalene moiety, R.sub.1 is an oxyethylene group; --CH.sub.2 CH.sub.2 O--or an oxypropylene group; ##STR1## an oxyethylene chain or an oxypropylene chain with up to fifteen oxyethylene groups or oxypropylene groups or a combination of oxyethylene groups and oxypropylene groups to a chain where the sum of these groups is at most fifteen; the mean value n for n is 1-15 and R.sub.2 is hydrogen or a phosphonate group with the formula ##STR2## where M.sub.1 and M.sub.2 are hydrogen ion or alkali metal ion or where R.sub.2 is a group with the formula ##STR3## where M.sub.2 has the above meaning and M.sub.3 is --(R.sub.1).sub.n --O Ar where R.sub.1, n and Ar have the above meaning; a process for the production of the agent and the use of the agent in a cement containing composition.

(1) Field of the Invention
The present invention relates to a flowability improving agent which also gives a prolonged workability time of an aqueous cement containing composition, a process for the production of such an agent and a use thereof.
(2) Description of the Related Art
Flowability improving agents have been known for a long time as additives to compositions containing cement, lime and/or gypsum. Grouts, mortars, concrete, putty and self levelling floor screeds constitute examples of cement based mixtures. Usually these mixtures are composed in such a way that they contain a surplus of water as compared to the minimum amount necessary for the curing or binding reaction of the cement.
If one tried to use exactly the amount of water necessary for the curing, the mixture would get an unsatisfactory consistency and workability due to the strong attractive forces between the cement particles.
On the other hand, a too high water content in the mixture mentioned results in a drastic decrease of the strength of the cured mixture. However, to a certain extent this can be compensated by an increase of the cement content at the composition of the mixture. A too high content of cement per unit of volume has, however, the negative effect that the heat release at the curing reaction may result in crack formations and other less desirable effects. Also from an economical viewpoint it is undesirable to use a higher content of cement than necessary.
Nowadays, cement based mixtures are often pumped under pressure through a pipeline different building work sites. Then it is important that the mixture has a pumpable consistency but not too high a water content.
It is known before to use certain concrete additives to be able to decrease the water content of the concrete mixture and at the same time get a good flowability. The most well known of these additives are sulphonated naphthalene-formaldehyde resins, sulphonated melamine-formaldehyde resins, sulphonated melamine-urea-formaldehyde resins and sodium and calcium salts of ligninsulphonic acid.
Thus, these known additives give a certain effect in the respects mentioned above.
The conception of workability time is used in the present technical field to define the period of time after mixing a flowability improving agent of the above mentioned type with a concrete mixture, during which the mixture has a better flowability than the corresponding concrete mixture without any admixture of a flowability improving agent.
Different methods can be used to determine the workability time. According to the present patent application a standardized Swedish method, SS 137121 is used for consistency measuring. Therein a metal cone is filled with a concrete mixture whereupon the cone is lifted up and taken away leaving the unsupported cone of concrete. Then the concrete cone sinks down.
The difference between the height of the concrete cone and the metal cone, the so-called slump is used as a measure of the consistency of the concrete. Then the slump is measured on a concrete mixture before the admixture of a flowability improving agent and after the admixture thereof. Samples are taken out at even intervals until the slump of the concrete mixture containing the flowability improving agent has reached the same value as the concrete mixture had before the addition of the agent. The time period measured constitutes the workability time.
Today, concrete producers and building contractors often have very big problems with a too short workability time of the concrete. Thus, the effect of the flowability improving agent in the concrete decreases too quickly. Sometimes, for instance the transport of the concrete from the concrete factories to the building sites takes too long preventing the concrete from filling the molds etc before it loses its flowability. Moreover, on the building site pouring stops can occur because of different reasons. When the pouring then starts again the concrete has lost a great deal of its workability. This causes big problems especially if pumping of flow concrete is involved. A plugged pump conduit can result in very big economic consequences.
The problems with a too short workability time are particularly big at high concrete temperatures during summer time and with pouring with warm concrete during winter time.
Of the above flowability improving agents, above all sulphonated melamine-formaldehyde resins and sulphonated naphthalene-formaldehyde resins are used for flow concrete. Then the problems disclosed above occur.
Very big research efforts have been spent in many places in the world to solve the problem with too short a workability time of concrete. In certain cases it has partially been possible to extend the workability time. However, at the same time other problems have appeared, such as a decreased short time strength, an increased air content, a risk of false set or an extremely prolonged time of initial setting of the concrete. These problems are so serious per se that it cannot be said that the problem with a short workability time has been solved in a satisfactory way before.

Flowability improving agent, a process for the production thereof and a use thereof


An improved auto-focus system for a digital camera has a lens designed to have the focus of two spectra offset from each other by a predetermined amount. The two offset spectra are used to calculate two focus signals. Once the two focus signals are calculated the correct direction to move the lens system to set the optimum focus can be determined.

Digital cameras are typically equipped with auto-focusing systems. These systems typically have motor driven lenses that are adjusted to a position that corresponds to the maximum of a focus signal. A focus signal is a signal that has a signal strength proportional to the closeness to focus of the focusing system (the better the focus the higher the signal). The focus signal is typically calculated using the contrast method. See U.S. Pat. No. 5,597,999, which is incorporated by reference, for an example of generating a focus signal using a contrast method. Other methods of generating the focus signal are available but are not generally used in digital cameras. Focus signals are typically symmetrical along the optical axis of the focusing system (i.e. an object too near the optical system and an object to far from the optical system will both give a lower signal strength than an object at the proper focus).
For example, figure one shows a typical focus signal 102 with the maximum signal strength at point 104. The X-axis 110 is the physical distance of the object, to be focused, along the optical axis of the system. The Y-axis 112 is the signal strength of the calculated focus signal. Locations 106 and 108 are displaced from the maximum focus signal by distances 114 and 116. Location 106 is too close to the lens system to be in optimum focus and location 108 is too far from the lens system to be in optimum focus. Points 118 and 120 give the focus signal strengths at locations 106 and 108 respectively and the signal strengths are substantially equal. Because the signal strengths of location 106 and 108 are substantially equal the automatic focusing system can not differentiate between the two locations. The system can not determine, just by the signal strength of the focus signal, if the object to be focused is too close or too far from the optical system. Because it can not be determined if the object to be focused is too near or too far, the system will not know which way the lens should be moved to bring the object into focus.
There are two typical solutions to this problem. The first solution is to always start the lens at one of the positions where the lens is at its maximum movement (i.e. at the farthest or nearest lens position) and then move the lens towards the other maximum lens location until the system is in focus. This method has a number of problems. The first problem is that the total system movement for the lens can be large. For example, when the initial lens position is set to focus things at large distances and the object to be focused is very near the camera, the lens will travel almost its full movement range before the object is brought into focus. The second problem is that each time the system is to be focused the lens must be reset to the initial starting location.
The second typical solution is to set the lens in the middle of the travel range and calculate an initial focus signal strength and then move the lens some amount in one direction and calculate a second focus signal strength. Using these two calculated signal strengths the correct direction to move the lens for proper focus can be determined. This method will sometimes move the lens in the wrong direction to calculate the second focus signal strength. When the system does move the lens in the wrong direction to calculate the second focus signal strength, the lens must be moved in the direction back towards the initial location to bring the system into focus. This takes additional time.
Auto-focusing systems are typically one of two types. The first type allows the lens to be adjusted to any point between the maximum and minimum lens position. The second type has a limited number of set positions where the lens can be located.
Color digital cameras typically use area sensor arrays. These area sensor arrays are typically composed of a plurality of sensor elements or pixels in a two dimensional array. These pixels are typically covered by a set of red, green and blue filters arranged in some pattern, typically a Bayer dither pattern (see FIG. 2). The color digital camera records the information for each color using the area sensor elements covered by that color filter (i.e. the pixels covered by the red filters produce the red color signal). Because the Bayer dither pattern has twice as many pixels covered by a green filter compared to either the red or blue filters, the effective sampling rate for the green color is twice the sampling rate for either the red or blue colors. Because of this higher resolution, color digital cameras typically use the green color to calculate the focus signal. Other colors or a combination of some or all of the colors could be used to calculate the focus signal. Because the area sensor array has all the pixels or elements substantially in the same plane, the lens of the camera is typically designed to focus all of the colors in that same plane.
Lens systems typically consist of a number of optical elements. Each optical element can be made from a range of optical material. A given optical material is typically identified by the speed of light in the optical material compared to the speed of light in a vacuum (i.e. its refractive index N). The refractive index of an optical material is used to calculate the angle change a ray of light makes when entering or leaving that optical material. The refractive index of optical materials is dependent on the wavelength of light. Because the refractive index is dependent on the wavelength of light, a single element lens that focuses green light at one location will focus blue light at a different location. This difference in the focal point of different colors is called primary chromatic aberration. The dependence of the index of refraction on wavelength for a given optical material is defined by the dispersive power or Abbe number V and is calculated as V=(Nb-Nr)/(Ny-1) where Nb, Nr, and Ny are the index of refraction for the given optical material at blue, yellow, and red light respectively. Different optical materials have different Abbe numbers. A lens system with two or more elements, where each element is made with a different optical material, can be designed to eliminate primary chromatic aberration. Achromates are lens systems, with two or more elements, designed to eliminate the primary chromatic aberration, typically by making the focal lengths for red light (656 nm) and blue light (486 nm) the same. There will be some chromatic aberration at wavelengths between the two corrected wavelengths, but it is typically small and called secondary or residual chromatic aberration. Lens systems can be designed to eliminate primary chromatic aberration at more than two wavelengths.
There is a need for a reduction in the amount of time required for auto focus for color digital cameras and for less expensive lenses.

Offset spectra lens system for a two spectra automatic focusing system


An exercise device that includes a support member disposed in a predetermined position by a mounting unit. A resistive ring secured to the support member, wherein the resistive ring includes a first ring and a plurality of resistive members connected to the first ring. A head harness connected to the other ends of the plurality of resistive members. The resistive ring further includes a second ring for attaching the head harness to the resistive members.

1. Field of the Invention
The present invention relates in general to exercise devices and, in particular, to an exercise device that enables a user to exercise the cervical or neck muscles unidirectionally as well as in a multi-directional manner.
2. Description of Prior Developments
The cervical or neck muscles often require exercising for a number of reasons. One reason is to strengthen the neck muscles, which would be useful in such sports as football, boxing, wrestling or even body building. Another reason is to rehabilitate the neck muscles in order to overcome an injury or chronic condition. An example of such an injury could be a neck or head trauma caused by a car accident or sports injury. Rehabilitating the neck muscles is also useful in treating neurological damage such as paralysis or stroke.
In strengthening or rehabilitating the neck muscles, moving the neck in a multi-directional manner is desirable since it enables the neck muscles to be exercised simultaneously. This enables the neck muscles to be strengthened more effectively in a shorter period of time. An example of a multi-directional movement is when the neck achieves circumduction. Achieving circumduction is when the neck rotates in a 360 degree range of motion. Such a movement enables a number of the neck muscles to be exercised simultaneously.
In the case of rehabilitating neck injuries or conditions, multi-directional movements could drastically reduce the recovery time of the patient. Since moving in a multi-directional manner is a more natural neck movement, the coordination of the neck muscles also could be improved.
The current neck exercising or rehabilitation equipment does not enable a user's neck to be exercised in a multi-directional manner or in a full range of motion. This is because the current neck exercising or rehabilitation equipment only provides for unidirectional vertical, horizontal or rotational movement. Therefore, the current equipment cannot strengthen the neck muscles as effectively when multi-directional movements are utilized.
Since the current neck equipment only allows for unidirectional movement, often in order to exercise different neck muscles either the user or the device has to be repositioned. Such constant repositioning can be difficult for a user who has suffered a serious injury or has a debilitating condition. Further, the current neck equipment is often not adjustable which can make it difficult to use for people who are either below or above average size.
Examples of prior art neck exercise devices are disclosed in U.S. Pat. No. 4,537,393 to Kusch, U.S. Pat. No. 4,645,198 to Levenston or U.S. Pat. No. 5,135,445 to Christensen. However, the devices disclosed in these patents have some of the same disadvantages, as described above. For example, the device disclosed in Kusch is not configured to adjust to the size and needs of the user. Further, Kush, Levenston and Christensen do not disclose devices that enable a user to exercise the cervical or neck muscles in a multi-directional manner.
In view of the above, a need therefore exists for an exercise device that enables a user to exercise the cervical or neck muscles in a unidirectional, as well as a multi-directional manner. A further need exists for a neck exercise device that is adjustable to the various needs and size of the user.


Solid freeform fabrication techniques are used in direct methods to form photonic bandgap structures, and in indirect methods to form molds for photonic bandgap structures. In the direct methods, solid particulate materials are mixed with a binder and, through a computer-controlled process, are built layer by layer to form the structure. In the indirect methods, unfilled polymeric materials are built layer by layer to form a negative mold for the photonic bandgap structure. The cavities within the mold may then be filled with a slurry incorporating solid particulate materials. Subsequent processing may include mold removal, binder removal, densification and secondary infiltration steps to form a photonic bandgap structure having the desired properties.

Photonic bandgap structures are man-made periodic lattices, in one, two or three dimensions, which are photonic analogs to semiconductors in electronics. Unlike semiconductors, in which a periodic structure (i.e., the crystal lattice) provides a structure which defines allowed and forbidden energy levels for electron propagation, photonic bandgap materials provide a periodic structure which exhibits a frequency gap where the propagation of electromagnetic waves, including the spontaneous emission of photons with frequencies within the gap, is forbidden for all wave vectors. Depending on the unit cell size of the periodic structure, the crystallographic orientation of the periodic structure, the dielectric constants and indices of refraction of the materials and other factors, these structures can be tailored to propagate electromagnetic waves within only certain wavelength ranges. It has been shown that the dimensions of the periodic lattice have to be on the same order of magnitude as the desired bandgap wavelength. For example, to obtain a bandgap for microwaves and longer wavelengths, the size of the unit cell must be in the millimeter range or greater. Also, similar to semiconductors, "defects" can be introduced, generating energy levels in the forbidden bandgap. This allows for the transmission of selected wavelengths, making the photonic bandgap structures very good optical filters. A schematic representation of a photonic bandgap structure having a periodic lattice in three directions is shown in FIG. 1.
Generally, photonic bandgap structures may be employed in all applications where resonant cavities are utilized, such as filters, impedance matching structures, lasers, etc. Some commercial applications include collision avoidance radar, planar antennas, microwave communications, telecommunication networks, low threshold optical switches, amplifiers and microlasers, and medical imaging.
A conventional photonic bandgap structure may include a mass of a high dielectric matrix material, such as a ceramic, with a lattice of holes extending through the structure in one, two or three dimensions. The holes may be empty (i.e., filled with air or vacuum) or filled with one or more low dielectric materials. Preferably, there should be a difference of at least 2 between the dielectric constant of the matrix material and the dielectric constant of the hole materials. Inverse structures are also possible, with the matrix phase being formed from a material having a relatively low dielectric constant and the hole phase being formed from a material having a relatively high dielectric constant.
In one prior art method for making such structures, hundreds of thousands of tiny holes are drilled in a periodic array through a mass of ceramic in one or more directions. This process is tedious, presents difficulties in obtaining accurate hole size and hole alignment, and does not permit the creation of blind holes within the ceramic mass.
Another prior art process involves the acid-etching of a multiplicity of holes in a single crystal of a ceramic or semiconducting material. In this process, the single crystal is oriented in a preferred direction and a photo-resist material is applied to a surface thereof. The photo-resist material is then selectively cured in a predetermined pattern such that the uncured regions define the pattern of holes which are to extend in one direction through the crystal. The uncured photo-resist material is removed to expose the hole pattern, and the crystal is immersed in an acid or a reactive plasma which attacks the holes, but not the remainder of the surface. After the holes have been formed in the first direction, the process may be repeated to form holes in second and third directions, as desired. In this process, the acid or reactive plasma must attack the crystal material more readily in the direction of the hole than in directions transverse to the direction of the hole so as to prevent ballooning effects and produce holes which have a uniform diameter along their entire extent. Further, it is not possible to produce blind holes using this process.
In yet another prior art process, hundreds of thousands of small spheres of a ceramic material are stacked one at a time in a predetermined array defining the desired latticework of holes. The array is then infiltrated with a polymer which holds the spheres in place and may act as a low dielectric constant matrix phase. This process is obviously tedious, lengthy and costly because of the labor involved.
In still a further prior art process which is similar to chemical vapor deposition processes, reactant gases for forming a desired composition for the hole phase are supplied to a chamber. A plurality of laser beams are moved and focused in the chamber at a point in space at which the combined intensity of the laser beams causes the gases to react and deposit on a selected region of a substrate. In accordance with this process, the laser beams are first moved in a direction away from the substrate to "grow" a thin filament out from the substrate surface. The laser beams are then moved in directions parallel to the substrate surface to "grow" branches out from the filament. By growing multiple parallel filaments and branches interconnecting the filaments, a latticework of a high dielectric constant ceramic can be produced with a desired hole pattern. The latticework can subsequently be infiltrated with a low dielectric polymer to form the matrix phase of the photonic bandgap structure. This process is not only costly, but is limited by the types of materials which can be successfully grown. Also, because the latticework needs to be interconnected in order to support itself, it is difficult to use this process to produce devices having discontinuous lattice structures, including blind holes.

Processes for forming photonic bandgap structures


A surge-protected hub applied to set up an AC line networking system and used for eliminating the surge problem is provided. The surge-protected hub includes a housing; a plurality of connectors mounted on the housing and electrically connected to an alternating-current power source for independently establishing connections to power lines for power transmission or network lines for networking signal transmission; and a surge-protected device disposed in the housing and arranged upstream of the plurality of connectors for filtering out surge signals that are received from the alternating-current power source while allowing networking signals having a frequency range lying in the frequency range of the surge signals to pass therethrough.

To date, network is widely used everywhere, from offices to home. The most used network system is illustrated in FIG. 1. A plurality of personal computers (PCs) 10 are successfully connected by means of a network hub 11 or a main server. The hub 11 or main server is further connected to a modem 12 such as an asymmetric digital subscriber line (ADSL) modem or a cable modem so that the computers 10 can access data from the internet via the telephone lines 13 or cables. A splitter 14 is necessary for the modem 12 to share the telephone lines 13 with the telephone 15. The splitter 14 filters out the high frequency signals to maintain high quality in telephone communication.
However, it is always a troublesome work to install a network cabling system in an office or a house without beforehand layout. There are a lot of difficulties in additional network cabling inside the floor or wall. It will be much simpler to lay the cables on the surface of the floor or the wall. Even though the cables are possibly arranged at corners, it is still unsightly and may adversely affect the pass by the floor. In an alternative network system, the networking signals are transmitted via existing electric wires. Please refer to FIG. 2 in which an AC line networking system is shown. The networking signals are transmitted via the existing AC lines 22. The power line adapters 21, each of which has a power plug at one end and an RJ45 or USB connector at the other end, are connected between the personal computers 20 and the utility power sockets 23 to establish a small local area network (LAN). Since electric wire layout is generally more popular than telephone line layout, the network system conducted via electric wires will simplify the network cabling task. U.S. Pat. No. 6,445,087 B1 assigned to the same assignee discloses such a network system, which is incorporated herein for reference.
The network system conducted via electric wires, however, suffers from the surge problem. The surge currents transmitted on the AC lines will significantly affect the communication quality of the networking signals.


A support structure for an axle housing of a towing tractor includes a leaf spring forming a part of a suspension, an axle housing which has a contact surface and is supported at opposite ends of the axle housing by the suspension and a spring seat which is separately provided from the leaf spring and the axle housing and disposed between the leaf spring and the axle housing, and the spring seat has a support surface. The axle housing is supported by the spring seat in plane surface contact between the contact surface and the support surface.

The present invention relates to a support structure for an axle housing of a towing tractor which is supported integrally at the opposite ends thereof by a suspension having leaf springs.
Japanese Patent Application Publication H11-291731 discloses a support structure for an axle housing of a towing tractor. According to the publication, the axle housing connecting the opposite wheels of the towing tractor is bound to a leaf spring by a spring seat, two U-bolts, a lower spring seat and a U-bolt restraining member and also supported by the leaf spring.
The spring seat includes a seat contacting with the leaf spring, a pair of side walls facing each other and extending from the opposite sides of the seat and a pair of gutter-shaped flanges extending outward from the respective side walls in opposite directions. The axle housing is supported on the leaf spring through the spring seat by engaging curved portion of the U-bolts with the axle housing, inserting leg portions of the U-bolts through the holes of the lower spring seat and screwing nuts on the threaded ends of the leg portions of the U-bolts.
Specifically, the axle housing is connected to the spring seat by welding the outer peripheral surface of the axle housing to the inner surfaces of the flanges of the spring seat for preventing the axle housing from rotating on its axis. The welded portion that is subjected to various kinds of forces such as torque, reaction force, loads from the road and the like requires high weld strength. Since the welding should be performed carefully, the working efficiency in forming the support structure of the axle housing is deteriorated. Furthermore, when the axle housing or the spring seat is to be replaced with a new part, they have to be replaced as a unit because they are welded together and, therefore, the replacement work will become costly.
The present invention is directed to providing a support structure for an axle housing of a towing tractor in which the axle housing can be supported on a leaf spring without welding a spring seat to the axle housing so that the spring seat or the axle housing may be replaced independently.

Support structure for axle housing of a towing tractor


A nozzle for a gaseous fuel injector has a converging portion, a tip connected to the converging portion, and an anti-leakage device disposed at the tip to selectively inhibit leakage of a residual gaseous fuel from the nozzle.

Due to the rising cost of liquid fuel (e.g., diesel fuel) and ever increasing restrictions on exhaust emissions, engine manufacturers have developed dual-fuel engines. An exemplary dual-fuel engine provides injections of a low-cost gaseous fuel (e.g. natural gas) through air intake ports of the engine's cylinders. The gaseous fuel is introduced with clean air that enters through the intake ports and is ignited by liquid fuel that is separately injected during each combustion cycle. Because a lower-cost fuel is used together with liquid fuel, cost efficiency may be improved. In addition, the combustion of the gaseous and liquid fuel mixture may result in a reduction of harmful emissions.
In these dual-fuel engines, use of a gaseous fuel injector in addition to a liquid fuel injector may necessitate inclusion of one or more gaseous fuel control valves to control the flow of the gaseous fuel into the combustion chamber. However, operation of the control valves may result in residual gaseous fuel at one or more locations along a gaseous fuel pathway after the control valves close, such as in a gaseous fuel injection nozzle. Since the gaseous fuel injection nozzles may be a different shape than the air intake ports in which they are located, this residual gaseous fuel may leak from the nozzle after the valve closes. The leaked fuel can become undesirable waste or contaminate a subsequent injection event.
One method of handling the difficulties presented by fuel leaking from injection nozzles is described in U.S. Patent Application Publication No. 2014/0338633 (the '633 application) published in the name of Fern on Nov. 20, 2004. The '633 application describes a fuel injection assembly having a nozzle portion with a seal member that allows the nozzle portion to be secured within an injector aperture formed within a cylinder of an engine. The nozzle portion is provided with a tiered portion that allows the nozzle portion to fit various configurations of injector apertures of combustion chambers having various sizes.
Although the system of the '633 application may address some of the drawbacks associated with residual fuel located in fuel injection nozzles, it may not be adequate for all applications. For example, in systems that include a gaseous fuel injector located in an air box, it may not be practical to use a nozzle that encompasses the entire air intake port because this arrangement would prevent air from also being injected through the port.
The disclosed nozzle is directed to addressing one or more of the problems set forth above and/or other problems of the prior art.

Fuel injection nozzle having an anti-leakage device


Analyses of serum samples for the presence and amount of either of the two subunits of human Factor XIII protein are used as a means of eliminating a significant source of error that arises in the testing of serum and plasma. For serum samples, a negative result of an analysis for the presence of subunit a is a means of verifying that a sample is indeed serum, while a negative or positive result for subunit a serves to distinguish serum (negative) from plasma (positive). A positive result for the presence of subunit b is a means of verifying that the sample is either serum or plasma and not any other biological fluid. A quantitative analysis of subunit b is a means of verifying that the sample is of the intended volume rather than having been reduced in volume due to improper sampling. A quantitative analysis of subunit b is also a means of verifying the dilution of a sample of either serum or plasma.

1. Field of the Invention
This invention resides in the fields of quality control for clinical laboratory test procedures and instrumentation, and of human Factor XIII protein and its uses.
2. Description of the Prior Art
The medical community, including practicing physicians, researchers, and clinicians of all types rely on the clinical laboratory for analytical testing of biological samples as part of routine physical examinations, and in diagnosing disease and monitoring patient progress and disease conditions, as well as similar functions and services. Among the most common biological samples that are analyzed by these laboratories are serum and plasma, although other fluids such as urine and cerebrospinal fluid are often used as well. Many analyses are performed by automated instrumentation, and in some cases large numbers of samples are analyzed simultaneously. Whether the tests are performed in this manner or on an individual basis by a laboratory technician, there are numerous sources of error that can produce spurious results.
The error that arises falls within two general classes—(1) spurious test results due to lapses in standard operating procedures and instrument malfunctions, and (2) analytic error. Some of the most common errors of the first class are those due to inaccurate mathematical correction for specimen dilution, misinterpretation of instrument codes, and instrument sampling errors such as bubbles in sample wells or transfer tubing or other malfunctions that result in samples whose volumes are less than standard. Of the second class, the most common type of error is that caused by calibration drift. This invention addresses errors of the first class. In proficiency testing, these errors have been shown to account for 300 false test results per one million assays. A review of the causes of laboratory errors is reported by Jenny, R. W., et al., "Causes of Unsatisfactory Performance in Proficiency Testing," Clin. Chem. 46(1): 89–99 (2000), who found that inaccurate dilution corrections accounted for 21% of spurious test results in proficiency testing, and missampling in a particular automated instrument such as might be caused by air bubbles or sample clotting occurred 0.016% of the time, during use of the instrument in testing for samples from the general population. A further source of error is the use of an incorrect sample type, such as urine, cerebrospinal fluid, or other bodily fluids instead of serum, or in coagulation studies the failure to differentiate between serum and plasma.

FXIII detection for verifying serum sample and sample size and for detecting dilution


Data ownership of a single record data object comprising a plurality of individual data elements may be distributed across a plurality of users, such that each individual user is capable of separately controlling access to those data elements for which the data owner has ownership privileges. These data ownership privileges, and corresponding access rights which may be individually provided by distinct data owners, is managed by a data management computing entity such that a single composite user interface may be generated for a user viewing a particular record data object such that the viewer is provided with viewing access to only those data elements for which the viewer has access. Thus, separate user interfaces may be generated and provided for different viewers accessing the same record data object.

With the increasing prevalence of wearable sensors/devices and home-based Internet of Things sensors/devices, as well as the ever-increasing number of data generating systems and devices, management of this growing quantity of data is becoming increasingly important. For example, within the medical industry, data that may be correlated with a patient/user's healthcare is constantly being generated by wearable devices (e.g., blood pressure sensors, body temperature sensors, blood-oxygen sensors, glucose sensors, and/or the like), as well as via newly developed testing devices that may be utilized at home or within a hospital or other medical location. This newly developed data, as well as existing patient-related healthcare data (e.g., Electronic Medical Records—referred to as EMR data; Electronic Health Records (EHR) data; Individual Health Records (IHR) data; and/or the like) may provide insights into a patient's health. However, at present, these various data types are generally not correlated due to various technical and privacy-related challenges.
Through applied effort and ingenuity, various limitations existing within the art have been addressed by certain embodiments as discussed herein.

Programmatically managing partial data ownership and access to record data objects stored in network accessible databases


A SRAM (static random access memory) cell is implemented with at least one double/ended, or differential, port and at least one single-ended port, with each port having read and write functionality. The SRAM cell includes a bistable loop of a first inverter and a second inverter. An input of the first inverter is coupled to an output of the second inverter at a first bistable node, and an input of the second inverter is coupled to an output of the first inverter at a second bistable node. In addition, the SRAM cell includes a single-ended port coupled to one of the bistable nodes and a doubled-ended port coupled to both of the bistable nodes. The two ports are operable to permit simultaneous access to data within the SRAM cell.

This invention relates generally to SRAMs (static random access memories) and, more particularly, to a SRAM (static random access memory) cell having multiple ports.
A SRAM (static random access memory) is known to one of ordinary skill in the art of electronics for storing data without need for periodic refresh of data. A SRAM is comprised of an array of SRAM cells. For some applications, data of the SRAM is simultaneously shared by a plurality of memory accessing devices. For such applications, the SRAM cell of the SRAM array is a multiport SRAM cell for providing access to the data of the SRAM cell by a plurality of memory accessing devices.
FIG. 1 shows an example multiport SRAM cell 100 of the prior art as described in U.S. Pat. No. 6,097,664 to Nguyen et al. The SRAM cell 100 of FIG. 1 includes a bistable loop of a first inverter 102 and a second inverter 104. The first inverter 102 is comprised of a first PMOSFET (P-channel metal oxide semiconductor field effect transistor) 106 and a first NMOSFET (N-channel metal oxide semiconductor field effect transistor) 108 coupled between a positive power supply VCC 119 and the ground node 121. The second inverter 104 is comprised of a second PMOSFET 110 and a second NMOSFET 112 coupled between the positive power supply VCC 119 and the ground node 121. The input of the first inverter 102 is coupled to the output of the second inverter 104 at a first bistable node 114, and the input of the second inverter 104 is coupled to the output of the first inverter 102 at a second bistable node 116. The first and second bistable nodes 114 and 116 store the data of the SRAM cell 100, as known to one of ordinary skill in the art of electronics.
In addition, the SRAM cell 100 includes a third inverter 118, which is a read driver inverter, having an input coupled to the second bistable node 116. The third inverter 118 is comprised of a third PMOSFET 120 and a third NMOSFET 122 coupled between the positive power supply VCC 119 and the ground node 121. The output of the third inverter 118 is coupled to inputs of a first pass gate 124 and a second pass gate 126. First read access control signals RA1 and RA1* (the complement of RA1) are provided by a first memory accessing device to the first pass gate 124 for reading the data at the second bistable node 116, via the read driver inverter 118, of the SRAM cell 100 as output signal RD1. Second read access control signals RA2 and RA2* (the complement of RA2) are provided by a second memory accessing device to the second pass gate 126 for reading the data at the second bistable node 116, via the read driver inverter 118, of the SRAM cell 100 as output signal RD2. The first and second pass gates 124 and 126 are comprised of a pair of a PMOSFET and an NMOSFET, and such implementation of pass gates is known to one of ordinary skill in the art of electronics.
Furthermore, the SRAM cell 100 includes a third pass gate 128 coupled to the first bistable node 114. One of the first or second memory accessing devices provides first write access control signals WA1 and WA1* (the complement of WA1) to the third pass gate 128 for writing input data WD1 to the first bistable node 114 of the SRAM cell 100. The third pass gate 128 is comprised of a pair of a PMOSFET and an NMOSFET, and such implementation of a pass gate is known to one of ordinary skill in the art of electronics.
Additionally, a pass transistor 130 is coupled to the first bistable node 114. A memory accessing device provides access control signal WA2 to the pass transistor 130 for either reading data R/WD2 from the first bistable node 114 of the SRAM cell 100 or for writing data R/WD2 to the SRAM cell 100. For example, the memory accessing device coupled to the pass transistor 130 includes portions 132 and 136 of a serial boundary scan subsystem. The portion 136 of the serial boundary scan subsystem functions to serially provide data R/WD2 to be written into the SRAM cell 100 or alternatively to serially receive data R/WD2 read from the SRAM cell 100, from or into a respective location 138 of the portion 136 of the serial boundary scan subsystem. The portion 132 of the serial boundary scan subsystem functions to serially provide the access control signal WA2 from the respective location 134 of the portion 132 of the serial boundary scan subsystem.
The portions 132 and 136 of the serial boundary scan subsystem are used for writing and reading initial configuration data to be stored by the SRAM cell 100, as described in U.S. Pat. No. 6,097,664 to Nguyen et al. The portions 132 and 136 of the serial boundary scan subsystem are typically already present within a memory system such that such initial configuration data may be stored into the SRAM cell 100 without significant added circuitry of the memory system. In addition, by using a single pass transistor 130 (instead of a two-MOSFET pass gate), the metal lines from the portions 132 and 136 of the serial boundary scan subsystem for writing and verifying the initial configuration data within the SRAM cell 100 are advantageously minimized.
In the SRAM cell 100, the first PMOSFET 106 and the first NMOSFET 108 of the first inverter 102 are sized to be larger than the second PMOSFET 110 and the second NMOSFET 112, respectively, of the second inverter 104. Thus, the W/L (i.e., the width over length) ratio of the first PMOSFET 106 is larger than the W/L (i.e., the width over length) ratio of the second PMOSFET 110, and the W/L (i.e., the width over length) ratio of the first NMOSFET 108 is larger than the W/L (i.e., the width over length) ratio of the second NMOSFET 112.
In that case, the MOSFETs 106 and 108 of the first inverter 102 have higher transconductance, GM, than that of the MOSFETs 110 and 112 of the second inverter 104. As a result, for writing data into the SRAM cell 100, the write data via the third pass gate 128 or via the pass transistor 130 is applied on the input (i.e., the first bistable node 114) of the first inverter 102 rather than on the input of the second inverter 104. The output 116 of the first inverter 102 with the MOSFETs 106 and 108 having higher transconductance over-powers the output 114 of the second inverter 104. Thus, the write data for the write operation is applied on the input (i.e., the first bistable node 114) of the first inverter 102 for proper write operation when the MOSFETs 106 and 108 of the first inverter 102 have higher transconductance than that of the MOSFETs 110 and 112 of the second inverter 104.
Because the MOSFETs of the first and second inverters 102 and 104 are differently sized, the multiports comprising the first, second, and third pass gates 124, 126, 128 and the pass transistor 130 are each single-ended, accessing only one of the first or second bistable nodes 114 and 116. The ports comprising the first and second pass gates 124 and 126 access the single second bistable node 116 via the read driver inverter 118 for reading data from the SRAM cell 100. The ports comprising the third pass gate 128 and the pass transistor 130 access the single first bistable node 114 for writing data to the SRAM cell 100. The port comprising the pass transistor 130 also accesses the single first bistable node 114 for reading data from the SRAM cell 100.
A disadvantage of the SRAM cell 100 of FIG. 1 is that each of the multiports comprising the first, second, and third pass gates 124, 126, 128 does not have the dual functionality of both reading and writing to the SRAM cell 100. The ports of the SRAM cell 100 comprising the first and second pass gates 124 and 126 are read only, and the port comprising the third pass transistor 128 is write only. In addition, because the ports of the SRAM cell 100 comprising the first, second, and third pass gates 124, 126, and 128 and the pass transistor 130 are single-ended, such ports are prone to signal deterioration from noise.
FIG. 2 shows another multiport SRAM cell 150 for providing both read and write functionality for each port that is single-ended. Elements having the same reference number in FIGS. 1 and 2 refer to elements having similar structure and function. The SRAM cell 150 of FIG. 2 includes the bistable loop comprised of the first inverter 102 and the second inverter 104 as described for the SRAM cell 100 of FIG. 1. In addition, the third inverter 118 is coupled to the second bistable node 116 for providing access to the data of the SRAM cell 150. In addition, the MOSFETs of the first and second inverters 102 and 104 of FIG. 2 are differently sized as already described herein with reference to FIG. 1.
The SRAM cell 150 of FIG. 2 includes a first pass gate 152, a second pass gate 154, and a third pass gate 156 comprising a first port. The SRAM cell 150 also includes a fourth pass gate 158, a fifth pass gate 160, and a sixth pass gate 162 comprising a second port. A first memory accessing device provides RW1 and RW1* (the complement of the RW1 signal) control signals for accessing the SRAM cell 150. In addition, the first memory accessing device provides WA1 and WA1* (the complement of the WA1 signal) control signals for accessing the first bistable node 114 of the SRAM cell 150 to write data R/WD1 into the SRAM cell 150. Furthermore, the first memory accessing device provides RA1 and RA1* (the complement of the RA1 signal) control signals for accessing the second bistable node 116 via the read driver inverter 118 of the SRAM cell 150 to read data R/WD1 from the SRAM cell 150.
Similarly, a second memory accessing device provides the RW2 and RW2, (the complement of the RW2 signal) control signals for accessing the SRAM cell 150. In addition, the second memory accessing device provides WA2 and WA2* (the complement of the WA2 signal) control signals for accessing the first bistable node 114 of the SRAM cell 150 to write data R/WD2 into the SRAM cell 150. Furthermore, the second memory accessing device provides RA2 and RA2* (the complement of the RA2 signal) control signals for accessing the second bistable node 116 via the read driver inverter 118 of the SRAM cell 150 to read data R/WD2 from the SRAM cell 150.
The pass transistor 130 in FIG. 2 comprises a third port similar to the pass transistor 130 of FIG. 1 for providing read and write access to the first bistable node 114 of the SRAM cell 150. A third memory accessing device provides the access control signal SA to the pass transistor 130 for accessing the first bistable node 114 to read or write data R/WSD from or to the SRAM cell 150.
Because the MOSFETs of the first and second inverters 102 and 104 of FIG. 2 are differently sized, the multiports comprising the plurality of pass gates 152, 154, 156, 158, 160, and 162 and the pass transistor 130 are each single-ended accessing only one of the first or second bistable nodes 114 and 116 for each one of the read or write function, and such ports are prone to signal deterioration from noise. In addition, the SRAM cell 100 of FIG. 1 is comprised of thirteen MOSFETs, and the SRAM cell 150 of FIG. 2 is comprised of nineteen MOSFETs. When the SRAM cell is used in application within a register file comprised of thousands of SRAM cells, the number of MOSFETs for implementing a SRAM cell is not as critical. However, when the SRAM cell is used in application with a data processor within a memory system comprised of millions of SRAM cells, the number of MOSFETs for implementing a SRAM cell is desired to be minimized for in turn minimizing the area of the memory system comprised of such SRAM cells.
Thus, a SRAM cell is desired that provides a single-ended port and a differential port with a minimum number of transistors.
Accordingly, in a general aspect of the present invention, a SRAM cell is implemented with at least one differential port and at least one single-ended port.
In one example embodiment, a multiport SRAM (static random access memory) cell comprises a bistable loop of a first inverter and a second inverter. An input terminal of the first inverter is coupled to an output terminal of the second inverter at a first bistable node, and an input terminal of the second inverter is coupled to an output terminal of the first inverter at a second bistable node. In addition, a single-ended port is coupled to one of the first bistable node or the second bistable node, and a differential port is coupled to both of the first and second bistable nodes.
In another aspect of the present invention, a multiport SRAM (static random access memory) cell comprises a bistable loop of a first inverter and a second inverter. An input terminal of the first inverter is coupled to an output terminal of the second inverter at a first bistable node, and an input terminal of the second inverter is coupled to an output terminal of the first inverter at a second bistable node. A single-ended port is coupled to one of the first bistable node or the second bistable node and is operable to both read data from and write data to the coupled bistable node through a same transistor. A differential port is coupled to both of the first and second bistable nodes and is operable to both read data from and write data to the coupled bistable nodes through a same pair of transistors.
In a further aspect of the present invention, a multiport SRAM (static random access memory) cell comprises a bistable loop consisting of a first CMOS inverter having first and second transistors and a second CMOS inverter having third and fourth transistors. An input terminal of the first inverter is coupled to an output terminal of the second inverter at a first bistable node, and an input terminal of the second inverter is coupled to an output terminal of the first inverter at a second bistable node. A single-ended port consists of a fifth transistor coupled to one of the first bistable node or the second bistable node, and a differential port consists of a sixth transistor coupled to the first bistable node and a seventh transistor coupled to the second bistable node.
In yet a further aspect of the present invention, a method of accessing data within an SRAM (static random access memory) cell comprises providing a single-ended port within the SRAM cell and providing a differential port within the SRAM cell. In addition, data within the SRAM cell is accessed through the single/ended port simultaneously with accessing data within the SRAM cell through the differential port.
These and other features and advantages of the present invention will be better understood by considering the following detailed description of the invention which is presented with the attached drawings.

SRAM cell with single-ended and differential read/write ports