An apparatus includes a detecting pixel including a converting element and a switch element, a different pixel includes a different converting element and a different switch element, a signal line connected in common to a plurality of the switch elements, a driving unit configured to drive the different switch element and the switch element, and a control unit configured to control the driving unit, wherein the control unit controls the driving unit such that in a case where an on-state voltage or an off-state voltage is applied to at least one switch element, a voltage of opposite polarity to the on-state voltage or the off-state voltage is applied to a different switch element that is different from the at least one switch element or a voltage of opposite polarity to the on-state voltage or the off-state voltage is applied to the different switch element.

Field of the Invention
The present invention relates to radiation imaging apparatuses, radiation imaging systems, and a method for controlling the radiation imaging apparatus.
Description of the Related Art
Radiation imaging apparatuses including a matrix substrate including pixel arrays having a combination of switches, such as thin-film transistors (TFTs) or the like, and converting elements, such as photoelectrical converting elements or the like, have been put into practical use as radiation imaging apparatuses for use in medical imaging diagnosis and non-destructive tests using radiation, such as X-rays, etc.
In recent years, it has been studied to increase the functions of radiation imaging apparatuses. An example is to include a function for monitoring irradiation of radiation. This function enables, for example, detection of timing at which the irradiation of radiation from a radiation source is started, detection of timing at which the irradiation of radiation is to be stopped, and detection of the dose of radiation or the integrated dose of radiation.
Japanese Patent Application Laid-Open No. 2012-15913 discusses a radiation imaging apparatus including image capturing pixels for acquisition of radiation images and detecting pixels for detection of radiation. Further, Japanese Patent Application Laid-Open No. 2012-15913 discusses an arrangement in which signals for detecting radiation are read via switch elements connected to the detecting pixels. Further, Japanese Patent Application Laid-Open No. 2012-15913 discusses an arrangement in which a driving voltage is switched as appropriate between a conductive voltage and a non-conductive voltage in order that the conductive state of the switch elements is switched at the time of reading the signals of pixels for detection.
However, in the radiation imaging apparatus discussed in Japanese Patent Application Laid-Open No. 2012-15913, the electrical potential of the signal lines may change at the time of switching the driving voltage due to parasitic elements (parasitic capacitances) between control lines and the signal lines connected to the switch elements as a result of a change in voltage of the control lines. The change in electrical potential of the signal lines sometimes leads to inadequate accuracy of detection of irradiation of radiation.

Apparatus, system, and method of controlling apparatus


A method, apparatus, and computer program product for accurately determining aircraft altitude, impact pressure, and calibrated air speed are provided. The determined results may be used for analysis in certification processes, used for building flight testing or simulation models that also may used in certification processes, or used for other purposes such as data to be used in a flight simulator. Altitude information of an aircraft is determined based on recorded altitude information generated by an inertial navigation system (INS) of the aircraft and altitude information generated by a global positioning system (GPS) of the aircraft. A static pressure value is generated based on the determined altitude information.

For aircraft certification and modeling for simulation, the actual height of the aircraft during flight must be determined accurately within a threshold value typically of a few feet. This is required in order to pass various certifications. One method for calculating aircraft height uses a barometric loop (baro loop) of inertial reference sensor data. However, the baro loop produces some errors that reduce the accuracy when determining actual aircraft altitude.
Other current methods use height derived from inertial vertical speed with corrections for ambient pressure and temperature. However, these methods may not have desired accuracy for these applications. This is due to designs of aircraft inertial systems, which bias their vertical calculations with pressure inputs from the aircraft's sensors.
Therefore, there exists an unmet need to more accurately determine aircraft height for post-flight testing and aircraft modeling.

System and method for determining aircraft tapeline altitude


A flexible barrier assembly having a flexible visible light-transmissive substrate having a Tg greater than or equal to that of heat-stabilized polyethylene terephthalate (“HSPET”) overcoated with a first polymer layer having a Tg greater than or equal to that of HSPET and further overcoated with at least two visible light-transmissive inorganic barrier layers separated by at least one second polymer layer having a Tg greater than or equal to that of HSPET can be used to mount, cover, encapsulate or form moisture- and oxygen-sensitive articles such as organic light emitting devices and light valves.

Organic light emitting devices (OLEDs) can suffer reduced output or premature failure when exposed to water vapor or oxygen. Metals and glasses have been used to encapsulate and prolong the life of OLED devices, but metals typically lack transparency and glass lacks flexibility. Intensive efforts are underway to find alternative encapsulation materials for OLEDs and other electronic devices. A flexible polymeric barrier film that exhibited low permeability to water vapor and oxygen would be especially useful, but despite intense industrial effort only limited success has been attained thus far. References relating to flexible barrier films include U.S. Pat. No. 5,440,446 (Shaw et al.), U.S. Pat. No. 5,530,581 (Cogan), U.S. Pat. No. 5,681,666 (Treger et al.), U.S. Pat. No. 5,686,360 (Harvey, III et al.), U.S. Pat. No. 5,736,207 (Walther et al.), U.S. Pat. No. 6,004,660 (Topolski et al.), U.S. Pat. No. 6,083,628 (Yializis), U.S. Pat. No. 6,146,225 (Sheats et al.), U.S. Pat. No. 6,214,422 (Yializis), U.S. Pat. No. 6,268,695 (Affinito), U.S. Pat. No. 6,358,570 (Affinito), U.S. Pat. No. 6,413,645 (Graff et al.), U.S. Pat. No. 6,492,026 (Graff et al.) and U.S. Pat. No. 6,497,598 (Affinito), U.S. Pat. No. 6,497,598 B2 (Affinito), U.S. Pat. No. 6,570,325 B2 (Graff et al.), U.S. Pat. No. 6,623,861 B2 (Martin et al.) and US 2002/0176993 A1 (Graff et al.); European Patent No. EP 0 777 280 B1 (Motorola, Inc.) and PCT Published Application No. WO 97/16053 (Robert Bosch GmbH). The Walther et al. patent describes a barrier assembly for plastic containers, with the lowest reported oxygen transmission rate being 0.375 cc/m2/day/bar.


A reclining device has leg portions formed in opposed end portions of each of slide pawls. Basically, a rotating cam bears the slide pawl at a middle bearing portion formed in a middle portion between the leg portions. Furthermore, the rotating cam bears the slide pawl also at the leg portions. Such a three-point supporting structure prevents the middle portion of a slide pawl body from deflecting radially inwardly even in the event of application of a turning force from an annular ratchet. Thus, the slide pawls are stably maintained in mesh with the ratchet.

The disclosure of Japanese Patent Application No. 2001-11842 filed on Jan. 19, 2001 including the specification, drawings and abstract is incorporated herein by reference in its entirety.
1. Field of Invention
The invention relates to a reclining device. More specifically, the invention relates to the fitting of a seat back and a seat cushion.
2. Description of Related Art
A reclining device of a certain type is disclosed, for example, in Japanese Patent Application Laid-Open No. 8-253063. This reclining device is designed such that a cam body presses a plurality of slide pawls each having outer teeth on the front end side against an annular ratchet having inner teeth on the inner periphery side so that the slide pawls are brought into mesh with the ratchet and locked with respect thereto. Further, the operation of pressing the slide pawls against the ratchet is canceled by applying an arbitrary operational force to the cam body so that the slide pawls are retreated from the ratchet and brought out of mesh therewith.
The reclining device of this type is designed to prevent the ratchet from rotating relative to a holder when the slide pawls are locked with respect to the ratchet and to allow the ratchet to rotate relative to the holder when the slide pawls are unlocked from the ratchet. The reclining device of this type is disposed between a rear end portion of a seat cushion and a lower end portion of a seat back, thus constituting a vehicular reclining seat. For example, the reclining device of this type is designed such that the seat back is longitudinally tiltably supported with respect to the seat cushion by mounting the ratchet on the lower end side of the seat back and the holder on the rear end side of the seat cushion.
It is to be noted herein that the reclining device of this type confronts the following problem. If a great circumferential turning force is applied to the seat back constituting the reclining seat, the ratchet is also exposed to a great circumferential turning force, which acts on the slide pawls as radial and tangential components in the circumferential direction. The slide pawls are displaced both radially inwardly and circumferentially. As a result, the slide pawls may be brought out of mesh with the ratchet. Thus, the reclining device of this type requires that the slide pawls securely mesh with the ratchet when the slide pawls are locked with respect to the ratchet.
However, the reclining device according to the related art as disclosed in the aforementioned patent publication is designed to bear each of the slide pawls only at a single point, namely, at the center of a rear end portion thereof. Hence, if a great circumferential turning force is applied to the slide pawls from the ratchet, each of the slide pawls sways circumferentially upon its bearing portion for the cam body and becomes quite unstable although it is still maintained in mesh with the ratchet. Then, the slide pawls may be retreated from the ratchet, disengaged therefrom, and unlocked therefrom.
The invention thus improves the reclining device of the above-mentioned type such that the slide pawls are stably maintained in mesh with the ratchet and cannot be disengaged therefrom easily even if a great circumferential turning force is applied to the slide pawls from the ratchet. To achieve this object, the reclining device of the invention adopts a construction capable of securely maintaining the slide pawls in mesh with the ratchet, taking into account the configuration of the slide pawls and the manner in which the cam body bears the slide pawls.
A reclining device according to one exemplary aspect of the invention comprises a plurality of pawls, an annular ratchet, a cam body, and a holder. Each of the pawls has outer teeth formed on the front end side, first and second leg portions formed at opposed end portions, and a bearing portion formed between the first and second leg portions. The first and second leg portions extend toward the rear end side. The annular ratchet has inner teeth formed on the inner periphery side. The cam body comes into abutment at least on the bearing portion of each of the pawls and possibly on the leg portions and the bearing portion of each of the pawls. The cam body presses the pawls toward the ratchet so that the pawls are brought into mesh with the ratchet and locked with respect thereto and stops pressing the pawls so that the pawls are retreated from the ratchet and unlocked therefrom. The holder holds each of the pawls such that the pawl can move toward and away from the inner teeth of the ratchet, and rotates concentrically with respect to the ratchet. The cam body, which operates by an arbitrary operational force, releases the pressing force applied to the slide pawls and brings them out of mesh with the ratchet. The reclining device is designed to prevent the ratchet from rotating relative to the holder when the slide pawls are in mesh with the ratchet and to allow the ratchet to rotate relative to the holder when the slide pawls are out of mesh with the ratchet.


The lateral pnp transistor encompasses a p-type semiconductor substrate, an n-type first buried region disposed on the semiconductor substrate, an n-type uniform base region disposed on the first buried region, an n-type first plug region disposed in the uniform base region, a p-type first emitter region and a first collector region disposed in and at the top surface of the uniform base region, a graded base region disposed in the uniform base region and a first base contact region disposed in the first plug region. The graded base region encloses the bottom and the side of the first main electrode region. The doping profile in the graded base region intervening between the first emitter region and the first collector region is such that the impurity concentration is gradually decreases towards the second main electrode region from the first main electrode region.

1. Field of the Invention
The present invention relates to a semiconductor integrated circuit, more particularly to a structure of a lateral transistor suitable for implementing a high-density monolithic integration on a semiconductor substrate.
2. Description of the Related Art
A structure merging a power transistor and its control circuit on the same semiconductor chip so as to form a semiconductor integrated circuit is known. In such a power IC, sometimes the power transistor is made by a vertical npn transistor and the control circuit by lateral pnp transistors, the lateral pnp transistor operating with relatively lower power than the vertical npn transistor. An example of the structure of the earlier lateral pnp transistor employed in these semiconductor integrated circuits (power ICs) is shown in FIGS. 1A and 1B. That is, the earlier lateral pnp transistor embraces a semiconductor substrate 1, an n-type first buried region 22 formed on the semiconductor substrate 1, an n-type first base region 33 formed over the entire surface of the semiconductor substrate 1, an n-type first plug region 4 so formed that the bottom of the first plug region 4 reaches to the first buried region 22, a p-type first emitter region 6 and a p-type first collector region 7 formed in and at the surface of the first base region 33, and an n-type first base contact region 9 formed in and at the surface of the first plug region. The lateral pnp transistor constructed in this manner encompasses further a field insulating film 86 on the top surface. And, a first emitter wiring 11, a connecting wiring 12, and a first base wiring 14 contact through contact holes in the field insulating film 86 with the first emitter region 6, the first collector region 7 and the first base contact region 9. The connecting wiring 12 serves as a first collector wiring and is connected to the base electrode of the vertical npn transistor having a high maximum operating voltage, though the illustration of the vertical npn transistor is omitted in FIGS. 1A and 1B.
In the earlier semiconductor integrated circuit above mentioned, it is convenient for the fabrication process to construct the first base region 33 of the lateral pnp transistor and the drift region (collector region) of the high voltage vertical npn transistor with the same epitaxial layer having the same thickness and the same impurity concentration. Because the vertical npn transistor composed of a second emitter region, a second base region and a second collector region is disposed at the back of the plane of the cross section in FIG. 1A, the illustration of the vertical npn transistor is omitted. In this case, the impurity concentration of the first base region 33 of the lateral pnp transistor and of the drift region of the vertical npn transistor must be set to a relatively low value, since the vertical npn transistor is required to operate with a higher maximum operating voltage. Therefore, it is necessary to make a base width Wb of the lateral pnp transistor larger relatively in order to suppress the occurrence of xe2x80x9cthe depletion-layer punch-throughxe2x80x9d between the emitter and collector regions so as to maintain the higher breakdown voltage between the emitter and collector electrodes of the lateral pnp transistor.
However, when the base width Wb is increased in the lateral pnp transistor, the current gain decreases so as to degrade the electrical performances. Further, the occupied space of the lateral pnp transistor increases and results in undesirable lowering of the on-chip integration degree of the semiconductor elements.
In view of these situations, it is an object of the present invention to provide a lateral transistor, a semiconductor integrated circuit and a fabrication method thereof, capable of obtaining a required high breakdown voltage between the first and second main electrodes by decreasing the base width Wb. xe2x80x9cThe first main electrode regionxe2x80x9d is one of the emitter and collector regions of the bipolar transistor (BJT), if the lateral transistor is the lateral BJT. xe2x80x9cThe second main electrode regionxe2x80x9d is the other of the emitter and collector regions, if the lateral transistor is the lateral BJT. For example, if the first main electrode region is the emitter region, the second main electrode region is the collector region. Between the first and second main electrode regions, a main current controlled by the base region flows so as to form a current path between the first and second main electrode regions.
Another object of the present invention is to provide a lateral transistor, a semiconductor integrated circuit and a method of fabricating thereof, capable of decreasing the occupied area of the lateral transistor to increase the on-chip integration degree.
A further different object of the present invention is to provide a lateral transistor, a semiconductor integrated circuit and a method of fabricating thereof, capable of improving a current gain of the integrated lateral transistor.
A further different object of the present invention is to provide a lateral transistor, a semiconductor integrated circuit and a method of fabricating thereof, capable of forming a highly integrated lateral transistor by a simple process compared with the earlier fabricating method of the lateral transistor or the semiconductor integrated circuit and thus realizing a considerable cost down.
To achieve the above-mentioned objects, a first feature of the present invention lies in a lateral transistor encompassing: (a) a semiconductor substrate of the first conductivity type; (b) a buried region of the second conductivity type disposed on the semiconductor substrate; (c) a uniform base region of the second conductivity type disposed on the first buried region; (d) a plug region of the second conductivity type disposed in the uniform base region, the plug region protrudes from a top surface of the uniform base region so as to reach to the buried region; (e) first and second main electrode regions of the first conductivity type disposed in and at the top surface of the uniform base region; and (f) a graded base region of the second conductivity type disposed in the uniform base region, enclosing bottom and side of the first main electrode region, the graded base region has a doping profile such that impurity concentration decreases towards the second main electrode region from the first main electrode region. Here, the combination of the uniform base region and the graded base region serves as a base region. Here, xe2x80x9cthe first conductivity typexe2x80x9d and xe2x80x9cthe second conductivity typexe2x80x9d are opposite conductivity type each other. That is, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.
According to the first feature of the present invention, it is possible to increase the impurity concentration in the graded base region of the lateral transistor relatively, compared with earlier lateral transistor. Therefore, a desired high breakdown voltage between emitter and collector (BVceo) can be obtained by making the width of the graded base region Wb thinner compared with the earlier lateral transistor, if the lateral transistor is the lateral BJT. As the width of the graded base region Wb can be reduced, the occupied space of the lateral transistor decreases, so that the on-chip integration degree of the semiconductor integrated circuit can be increased. In addition to the reduced width of the graded base region Wb, an impurity concentration gradually decreasing from the first main electrode region to the second main electrode region achieves an optimum built-in drift field. Therefore, the transport efficiency of the carriers injected into the graded base region is increased, so that reduction of the base transit time may be obtained. Hence the current gain of the lateral transistor is improved.
A second feature of the present invention lies in a semiconductor integrated circuit including a lateral transistor, the lateral transistor encompassing: (a) a semiconductor substrate of the first conductivity type; (b) a first buried region of the second conductivity type disposed on the semiconductor substrate; (c) a uniform base region of the second conductivity type disposed on the first buried region; (d) a first plug region of the second conductivity type disposed in the uniform base region, the first plug region protrudes from a top surface of the uniform base region so as to reach to the first buried region; (e) first and second main electrode regions of the first conductivity type disposed in and at the top surface of the uniform base region; and (f) a graded base region of the second conductivity type disposed in the uniform base region, enclosing bottom and side of the first main electrode region, the graded base region has a doping profile such that impurity concentration decreases towards the second main electrode region from the first main electrode region. Here, the combination of the uniform base region and the graded base region serves as a first base region of the lateral transistor.
According to the second feature of the present invention, the base width is made narrower compared to the earlier lateral transistor, while keeping a higher required breakdown voltage between the collector and the emitter can be obtained. Further, according to the second feature, it is capable of developing the on-chip integration degree of the semiconductor integrated circuit by decreasing the occupied space for the lateral transistor. Further, according to the second feature, the current gain of the integrated lateral transistor can be improved.
A third feature of the present invention lies in a method of fabricating a semiconductor integrated circuit encompassing: (a) selectively forming a first diffusion region of the second conductivity type on a semiconductor substrate of a first conductivity type; (b) growing an epitaxial layer of the second conductivity type on the first diffusion region so as to make the first diffusion region a first buried region; (c) selectively diffusing impurity atoms of the second conductivity type so as to form a first plug region of the second conductivity type, from a top surface of the epitaxial layer such that a bottom of the first plug region reaches to the first buried region; (d) selectively diffusing impurity atoms of the second conductivity type so as to form a graded base region of the second conductivity type, from the top surface of the epitaxial layer, a lateral position of the graded base region is separated from the lateral position of the first plug region and a vertical position of the graded base region is separated from the vertical position of the first buried region, the graded base region has a doping profile such that impurity concentration decreases towards peripheral region from central region of the graded base region; (e) forming a first main electrode region of the first conductivity type in and at the top surface of the graded base region; and (f) forming a the second main electrode region of the first conductivity type, so as to sandwich the graded base region between the first and second main electrode regions, in and at the top surface of the epitaxial layer.
According to the third feature of the present invention, the graded base region formed before the formation of the first main electrode region is drove-in more deeply than the edge portion of the first main electrode region by the thermal treatment required for forming the first main electrode region. Therefore, the graded base region is formed adjacently to and surrounding the first main electrode region. It is possible to form the graded base region and the first main electrode region by the diffusion self-alignment (DSA) method using the same diffusion window. Accordingly, spreading widths of the graded base region extending laterally from the edge portions of the first main electrode region are equal in both directions and the gradient of the impurity profile can be made equal in both directions. When the graded base region is formed in ring shape surrounding the first main electrode region on the plane pattern, width of the ring-like graded base region can be formed uniformly. Therefore, formation of a highly integrated circuit with the lateral transistor by a simple process compared with the earlier method of fabricating a semiconductor integrated circuit is possible, so that considerable cost down is realized. xe2x80x9cThe diffusion windowxe2x80x9d may be a window provided in the silicon oxide film used for pre-deposition (vapor phase diffusion) or for ion implantation.
Other and further objects and features of the present invention will become obvious upon an understanding of the illustrative embodiments about to be described in connection with the accompanying drawings or will be indicated in the appended claims, and various advantages not referred to herein will occur to one skilled in the art upon employing of the present invention in practice.

Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof


The present invention provides secure communication between a data center, in which a wide area network (WAN) is interposed between the data center and a wireless LAN to which a terminal connects to, comprises a VPN apparatus (GW) that connects with the terminal using a VPN through the wide area network and the wireless LAN; and a virtual core network virtualizing at least a part of constituent elements of a core network, wherein the VPN apparatus is connected to the virtual core network, and the terminal communicates with a connection destination, from the VPN via the VPN apparatus, via the virtual core network, and further via a packet data network to which the virtual core network connects.

The Non-3GPP access network is an IP (Internet Protocol) access network using an access technology with specifications outside a scope of 3GPP. The Non-3GPP access network includes a Wi-Fi (Wireless Fidelity) network (registered trademark: Wireless Fidelity) specified by the IEEE (Institute of Electrical and Electronics Engineers, Inc.) 802.11x standard and a wireless LAN (Wireless Local Area Network: WLAN) such as WiMAX (Worldwide Interoperability for Microwave Access) specified by the IEEE 802.16 standard. For non-3GPP access, for example, reference may be made to 3GPP TS 23.402: Architecture enhancements for non-3GPP accesses, or the like.
Wi-Fi (registered trademark)-Calling is a Voice over IP (VoIP) service provided on a Wi-Fi (registered trademark) network by a communication carrier (operator). For example, a terminal (User Equipment (UE)) into which a SIM (Subscriber Identity Module) of a communication carrier is inserted is connected to a security gateway of the communication carrier via a Wi-Fi (registered trademark) network, and when authenticated with SIM authentication by the security gateway, the terminal (User Equipment (UE)) is connected to an exchange node of a core network (Evolved Packet Core: EPC), thereby making it possible for the terminal to use a voice call service based on a telephone number and Short Message Service (SMS), etc., each provided by the communication carrier (Non-Patent Literature 1). Further, when the terminal is connected to Wi-Fi (registered trademark) and Wi-Fi (registered trademark)-Calling is set on in the terminal, the security gateway, on reception of an incoming call to the terminal calls the terminal via a Wi-Fi (registered trademark) network.
FIG. 1 is a diagram illustrating an EPS including a non-3GPP access network. A terminal (UE) 1 such as a smartphone can connect to a packet data network (PDN) 30 via a base station (evolved Node B: eNB) 10 of a communication carrier and an EPC 20, or can connect to the Internet via a wireless LAN such as a Wi-Fi (registered trademark).
An MME (Mobility Management Entity) 23 of EPC 20 performs various processing such as mobility management and authentication of the terminal 1, setting of a user data transfer route, and the like. In addition, the MME 23 performs user authentication, or the like. In cooperation with an HSS 24 (Home Subscriber Server which holds subscriber profile). The MME 23 establishes/releases a user data transfer route in a section (S1-U) from an SGW (Serving Gateway) 21 to the base station 10. The SGW 21 exchanges user data with the base station 10, for example, and establishes/releases a communication path between the SGW 21 and a PGW (Packet Data Network) PDN 22. The PGW 22 connects to a packet data network (PDN) 30 such as IMS (Internet Multimedia Subsystem) or the Internet, for example. Further, the PGW 22 performs, for example, allocation of an IP address (private IP address) to the terminal 1 and so forth. A PCRF (Policy and Charging Rules Function) 26 determines a policy control such as QoS (Quality of Service) and a charging control rule. Based on notification information from the PCRF 26, the PGW 22 and SGW 21 perform policy control, on a per packet basis, for example. In FIG. 1, a line S 11 or the like between respective nodes represents an interface, a broken line represents a control plane (C-Plane), and a solid line represents a signal (data) of a user plane (U-Plane). For details of the EPC, reference may be made to, for example, 3GPP TS 23.401: GPRS Enhancements for E-UTRAN Access or the like.
In Wi-Fi (registered trademark)-Calling, etc., a call request from the terminal 1 is forwarded, as an Un-Trusted Access (unreliable access), via a wireless LAN access point 41 and via an ePDG (evolved packet data gateway) 27 of a communication carrier to the PGW 22, and is then connected to PDN 30 (for example, IMS service).
The ePDG 27 is an IPsec gateway that terminates an IPsec (Security Architecture for Internet Protocol) connection from a mobile interface (Swu). When the terminal (UE) 1 switches to a non-3GPP access that is not trusted in security, or the terminal (UE) 1 first connects to a non-3GPP access, the terminal 1 detects an ePDG 27 and performs key exchange (IKEv2) with the ePDG 27, and establishment of an IPsec tunnel, and then establishes a PDN (Packet Data Network) connection with the PGW 22 over the established IPsec tunnel. In order for the terminal 1 to access the non-3GPP access network, it is necessary to perform authentication. The ePDG 27 relays an EAP (Extensible Authentication Protocol) message from the terminal 1 to a 3GPP AAA (Authentication Authorization Accounting) server 25. The 3GPP AAA server 25 performs EAP-SIM (Extensible Authentication Protocol-Subscriber Identity Module) Authentication, or EAP-AKA (Extensible Authentication Protocol-Authentication and Key Agreement) authentication (reference may be made to 3GPP TS 33.402: Security aspects of non-3GPP accesses, etc., for example).
The ePDG 27 sets up a tunnel (Proxy Mobile IP or GPRS (General Packet Radio System) Tunneling Protocol) toward the PGW 22 in S2b interface (reference may be made to 3GPP TR 23.834: Study on GPRS Tunneling Protocol (GTP) based S2b etc., for example).
When the non-3GPP access is compatible with PMIPv6 (Proxy Mobile IPv6), the ePDG 27 can connect to the PGW 22 via PMIPv6. In the case of using a proxy mobile IP between the PGW 22 and the ePDG 27, when an IPsec tunnel is established between the terminal 1 and the ePDG 27, the ePDG 27 transmits a proxy binding update message to the PGW 22. As a result, a transmission destination of data to the terminal 1 in the PGW 22 is switched to the ePDG 27. Note that PMIPv6 is a mobility control protocol (MAC) that establishes and releases a tunnel for data transfer (GRE (Generic Routing Encapsulation) tunnel) between a mobility anchor (LMA: Local Mobility Anchor) and a mobility access gateway (MAG: Mobility Access Gateway) (reference may be made, for example, IETF (The Internet Engineering Task Force) RFC (Request For Comments) 5213, etc.). The LMA forwards a packet to the MAG to which the terminal connects (switches a communication route and forwards the packet addressed to the terminal to a visiting area). When a terminal moves from one MAG to a different MAG, a tunnel for data forwarding is established between the LMA that has established the data forwarding tunnel before and ta MAG to which the terminal newly connects.
The 3GPP AAA server 25 provides network access authentication, authorization, and accounting services from users. Authorization of non-3GPP access is performed among terminal 1, 3GPP AAA server 25, and HSS 24. For example, when the terminal 1 establishes an IPsec tunnel with the ePDG 27, mutual authentication is performed between the terminal 1 and the network based on, for example, EAP-AKA.
When the terminal 1 moves or first connects to the trusted non-3GPP access (trusted wireless LAN access point 42 in FIG. 1), the MIP (Mobile IP) tunnel (S2a, DSMIPv 6 (Dual-Stack MIPv 6): reference may be made to IETF RFC 5555) directly to the PGW 22. As for ePDG and 3GPP AAA server, reference may be made, for example, to 3GPP TS 29.273: Evolved Packet System (EPS); 3GPP EPS AAA interfaces or the like. Whether the non-3GPP access network is a trusted access network or an untrusted access network is determined by, for example, a communication carrier (operator) of a HPLMN (Home Public Land Mobile Network) to which a subscriber is registered.
IPSec is a protocol that encrypts and authenticates packets at a network layer level. AH (Authentication Header) performs authentication of such as connection destination of a VPN (Virtual Private Network), presence or absence of tampering in a packet (reference may be made to IETF RFC 2402). ESP (Encapsulating Security Payload) performs packet encryption and authentication (connection destination/packet falsification) (reference may be made to IETF RFC 2406). For IPSec communication, there are a transport mode (IPsec between hosts on which IPsec is implemented) and a tunnel mode (IPsec between VPN apparatuses such as routers equipped with IPsec). In the transport mode, data of layer 4 or more of a packet is encrypted (see FIG. 10B), and the packet is forwarded based on an original IP header (Original IP header). In the tunnel mode, an original IP header and data part (FIG. 10A) of a packet are encrypted and a new IP header (New IP header) is added (see FIG. 10C).
An ESP packet has a format including an ESP header, a payload, an ESP trailer, and authentication data (ESP Authentication data) (see FIG. 10B and FIG. 10C).
The ESP header (ESP header) includes an SPI (Security Parameter Index: a 32-bit value uniquely identifying an SA (Security Association) for that datagram), and a sequence number (sequence number of the packet: 32 bits).
The ESP trailer includes a padding (padding field for adjusting payload length), a pad length (number of bytes of padding), a next header (Protocol after ESP: TCP (Transmission Control Protocol)/UDP (User Datagram Protocol)).
Authentication data (HMAC (Hash-based Message Authentication Code)) is a variable length field including an Integrity Check Value (ICV) calculated from an ESP packet except authentication data.
A security association (SA), which is a logical connection, is established between VPN apparatuses for performing IPsec communication. Since SA is a one-way tunnel, two SAs are provided for transmission and reception of packets. SA is established for each traffic that performs VPN communication. SA includes IPsec parameters (security information) (e.g., SPI (Security Parameter Index), mode, protocol, cryptographic algorithm, key, authentication algorithm, IP address of tunnel endpoint, etc.).
IKE (Internet Key Exchange) is a key exchange protocol for SA setting (regarding IKEv2, reference may be made, for example, to IETF RFC 4306, etc.). ISAKMP (Internet Security Association and Key Management Protocol)_SA (Security Association) is an SA for encrypting IKE control information for transmission and reception between peers.
Patent Literature 1 discloses a configuration in which a tunnel is established between a router in a user side system connecting to a data center via a communication network, and a virtual router in the data center.
Patent Literature 2 discloses a configuration in which a mobility of a terminal within a local network is supported, a continuous service provision is enabled because a terminal can access to the local network through security and authentication when the terminal moves to an external network.
[Patent Literature 1]
International Publication No. WO2013/190688A1 pamphlet
[Patent Literature 2]
Japanese Patent Kokai Publication No. JP2011-507449A
[Non-Patent Literature 1]
Next-generation Wi-Fi Calling Using IMS and 3GPP Wi-Fi Access, Internet search (searched on 26 Apr. 2015) <URL: http://www.aptilo.com/wi-fi-calling/next-generation-wi-fi-callin g-solution>

Communication system, communication apparatus, communication method, terminal, non-transitory medium


The present invention relates to a mini hot press apparatus, and more particularly, to an apparatus which can be used for making or annealing a polycrystalline material by pressurization and heating in various surrounding environments such as in a low vacuum, high vacuum, ultrahigh vacuum, high pressure gas, gas flow, even in air, etc.

The present invention relates to a mini hot press apparatus (compact hot press), and more particularly, to a mini hot press apparatus usable for making or annealing a polycrystalline material by pressurization and heating in various surrounding environments such as in low vacuum, high vacuum, ultrahigh vacuum, high pressure gas, gas flow, even in air, etc.
Generally, the term "hot press" simply refers to pressing in a hot state, and refers to a method or apparatus for molding a product by pressing at a predetermined temperature. Such a hot press is used for a process in which press-molding in a hot state is necessary, such as a process of making a printed circuit board (PCB), a fiber board, high grade construction materials (flooring, firebrick), a steel sheet for a vehicle, or the like, and in addition to the above-described application fields, use in special industrial fields such as a display (LCD, PDP) industry and flexible printed circuit board molding has been increasing.
A conventional hot press apparatus generally has a large size and has no other function besides press-molding.

University of Ulsan Foundation for Industry Cooperation


A device for interconnecting conductors in a group of electrical conductors includes a casing having at one end an opening adapted to receive a complementary member. It is adapted at the other end to receive a connecting strip. In its back it has a partition with two series of channels passing through it. The connecting strip is bent from a flat blank of a good electrical conductor to form a U-shape comprising flanges and a core. Parallel tangs perpendicular to the core of the U-shape are cut out from the flanges. The device further comprises a cover with latching devices adapted to cooperate with corresponding latching devices on the casing to lock the connecting strip against the partition by pressing against the outside of the core of the connecting strip.

1. Field of the invention
The present invention concerns a device for interconnecting conductors in a group of electrical conductors.
The invention is directed to the implementation of groups of electrical conductors supplying different electrical devices or equipments.
2. Description of the prior art
Primary conductors are designed to be connected to the electrical power supply and secondary conductors are usually spliced to the primary conductors.
The invention is directed to an interconnection device designed to eliminate splicing.

Device for interconnecting conductors in a group of electrical conductors


A feature information collecting device includes: a feature image recognizing unit that performs image recognition processing of a feature included in image information in a surrounding area of a vehicle; a construction information obtaining unit that obtains construction information including information of a construction section; a construction information storage unit that stores the obtained construction information; a construction completion determining unit that determines, when the vehicle travels a section of a road corresponding to a construction section according to the already stored construction information, completion of construction indicated by the construction information; and a feature learning unit that causes the feature image recognizing unit to perform image recognition processing of a feature in a construction section according to the construction information when the completion of construction is determined, and that generates, based on an image recognition result thereof and the vehicle position information, learned feature information including position information and attribute information of an image-recognized feature.

1. Field of the Invention
The present invention relates to a feature information collecting device and a feature information collecting program that recognizes the image of a feature included in image information obtained from an imaging device or the like mounted in a vehicle and collects information of the feature, as well as a vehicle position recognizing device and a navigation device using them.
2. Description of the Related Art
Accompanying improvement in imaging devices and image recognition technologies in recent years, it has become more common to develop a technology for performing image recognition processing of image information obtained by imaging the surrounding area of a vehicle by an on-vehicle camera, and correcting vehicle position information representing the current positing of the vehicle based on surrounding conditions of the vehicle indicated in the image recognition result. For example, the vehicle position recognizing device described in Japanese Patent Application Publication No. JP-A-2007-271568 is structured to perform image recognition processing of a target feature included in image information obtained by an imaging device mounted in a vehicle, and check the image recognition result with feature information of this target feature stored in advance in a database to thereby correct the vehicle position information obtained by a GPS signal or autonomous navigation. Thus, highly precise vehicle position information can be obtained.
Incidentally, for correcting vehicle position information by such a vehicle position recognizing device, it is necessary to prepare a highly accurate database of feature information. To collect such feature information, there is a known device which collects feature information based on an image recognition result of a feature included in image information of the surrounding area of a vehicle obtained from an imaging device or the like mounted in the vehicle (for example, refer to Japanese Patent Application Publication No. JP-A-2006-038558 and Japanese Patent Application Publication No. JP-A-2006-275690). Incidentally, all of the devices described in Japanese Patent Application Publication No. JP-A-2007-271568, Japanese Patent Application Publication No. JP-A-2006-038558 and Japanese Patent Application Publication No. JP-A-2006-275690 take a traffic sign or a road traffic information display board provided on a road as a target feature. Then, these devices perform image recognition of a target feature included in image information obtained by an imaging device mounted in the vehicle, and associate feature information such as sign information extracted from the recognition result thereof with position information and/or section information and store them in a map database. At this time, the position information and/or section information associated with the feature information is determined based on information from a GPS receiver, a gyro, a vehicle speed sensor and the like used generally in navigation devices. Thus, a database of feature information is created in these devices, and a route search, driving support, and the like based on the database is possible.

Image recognition processing device, method, and program for processing of image information obtained by imaging the surrounding area of a vehicle


Provided is a conversion process for an inferior oil, relating to the field of biomass utilization, energy and chemical industry. The conversion process is carried out in presence of a catalyst selected from the group consisting of an iron oxide compound, a desulfurization waste agent resulting from use of an iron oxide compound as desulfurizer, and a regeneration product of the desulfurization waste agent, under a controlled molar ratio of iron element to sulfur element. It is found that free radical condensation polymerization of inferior oil during cracking process can be blocked effectively by using carbonylation, and hydrogenation is achieved with active hydrogen produced from the conversion of CO and water. In the conversion process, inferior oil can be, directly converted, thereby increasing liquefaction yield and calorific value of the obtained oils. No large amount of waste water is generated after completion of the conversion.

With rapid development of social economy, non-renewable fossil energy sources such as coals, crude oils, natural gases and oil shales are running out. At the same time, environmental pollution caused by pollutants such as CO2, SO2, NOx produced by burning such non-renewable fossil energy sources also becomes increasingly serious, forcing humans to think about ways to obtain energy and ways to improve environment.
At present, conversion technology of inferior oil has become a new means of obtaining energy. In the prior art, inferior oil is generally converted to light oil through direct hydrogenation with pure hydrogen at a certain temperature and pressure under the presence of catalysts.
In the above-mentioned conversion technology of inferior oil, a large amount of waste water will be generated in the process of converting inferior oil to light oil. Furthermore, the above liquefaction process has strict requirements for reaction atmospheres and catalysts, and generally requires pure hydrogen atmosphere and noble metal catalyst, so is less economical. In addition, oils obtained in the above conversion process have low calorific value. In theory, changing the conversion atmosphere, reducing the raw material processing cost, or choosing cheap catalysts are beneficial to further development of the conversion process. Therefore, some scholars have tried to use non-hydrogen environment for biomass liquefaction conversion, but the catalyst has low catalytic efficiency, so such conversion cannot be industrially popularized and applied.

This patent is subject to a terminal disclaimer.


The present invention provides a quantum dot of which a surface is passivated with a short chain ligand, and a method of passivating a surface of the quantum dot using a ligand exchange reaction.

It is known that a material based on a perovskite structure has excellent optoelectronic properties such as being able to realize a narrow half width at half maximum (HWHM) while realizing various band gaps and a high photoluminescent quantum yield (PL-QY).
In this regard, research for applying the perovskite-based material to improve performance of an optoelectronic device such as a solar cell and an organic light emitting device has been continuously conducted.
Specifically, attempts have been made to apply the perovskite-based material to a photo-active layer of an organic light emitting device to implement a perovskite quantum dot light emitting device (PeQLED).
However, there is a limitation in that in the case of applying quantum dots having a perovskite structure (i.e., perovskite quantum dots (PeQDs)) to the photo-active layer as a single material, only single colored light is exhibited but it is difficult to exhibit multicolored light and implement a large area device through a solution process.

Surface-passivated quantum dots and method for passivating surface of quantum dots

UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)


A method for effecting cooperation between a modulating air conditioning system and a two-stage thermostat for satisfying an air conditioning load demand in a conditioned space includes: (a) operating the thermostat in a plurality of succeeding operating cycles to issue a first call signal or a second call signal indicating a first or second stage operation by the air conditioning system; the first and second stage operation being effected according to a first operating regimen to satisfy the air conditioning load demand; (b) operating the air conditioning system in response to the first and second call signals; the air conditioning system operating at a first power level when receiving the first call signal and operating at a predetermined second power level when receiving the second call signal; the first power level being established by the air conditioning system according a second operating regimen.

Many air conditioning units, such as by way of example and not by way of limitation furnaces, are configured to operate either in an "off" mode (providing no heat) or in an "on" mode (providing heat at full capacity, with the burner and blower operating at substantially 100%). Such on-off operation may be referred to as single-stage operation. Single-stage furnace operation may cause temperature in a conditioned space, such as a home, to go up or down by several degrees, having an effect on both occupants' comfort and energy bills. Single-stage furnaces may be designed to keep a home warm on the coldest days, but such coldest days may account for only about 2.5% of a heating season. Additionally, the turning on or off of a single-stage furnace may be manifested by a sudden increased flow or gust of air noticeable by occupants and affecting occupants' comfort.
A more comfortable solution for furnace control may be to use a two-stage furnace control approach that employs two "on modes" of operation (sometimes referred to as a first stage of operation and a second stage of operation) for delivering different volumes of heated air. Such two-stage furnaces may increase the precision of temperature control available to a furnace and thus may increase occupants' comfort in a conditioned space. However, such two stage furnaces may still require a periodic turning on and off of air flow so that an undesired sudden flow or gust of air may still be noticeable by occupants and may still affect occupants' comfort.
A modulating furnace may ease comfort and cost problems associated with a sudden increased flow or gust of air by "modulating" output of a furnace among different capacities in small incremental stages during operation. A modulating furnace may, by way of example and not by way of limitation, operate between 40% and 100% of capacity in 10% increments, depending upon the comfort requirements of a homeowner and the temperature outside. Such modulating operation may result in lower operating costs, quieter and less obtrusive operation and more even temperatures in a conditioned space.
A modulating furnace is generally coupled for operation with a modulating thermostat designed for operation with a modulating furnace in the modulating range (e.g., 40%-100%) in increments (e.g., 10% increments). Such a modulating thermostat may significantly increase cost of installing a modulating furnace. It would be advantageous for a user to be able to install a modulating furnace without having to also replace an existing two-stage thermostat.
There is a need for a method and system for controlling a modulating air conditioning system, such as a heating system, using a two-stage thermostat.

Method and system for controlling a modulating air conditioning system


A fluorescence polarization immunoassay (FPIA) for detecting the presence of one or more amphetamine-class analytes in a test sample is provided. The immunoassay uses competition between the analyte and a fluorescently labeled tracer for the binding site on an antibody specific for phenethylamine derivatives. The concentration of amphetamine-class analyte in the sample determines the amount of tracer that binds to the antibody. The amount of tracer-antibody complex formed can be quantitatively measured and is inversely proportional to the quantity of analyte in the test sample. The invention relates to tracers, to immunogens used to elicit antibodies for use as assay reagents, and to assay kits incorporating these tracers and assay reagents.

1. Field of the Invention
This invention relates to a method and reagents for detecting amphetamine-class drugs in a test sample such as urine. In particular, the invention relates to a fluorescence polarization immunoassay procedure for determining the presence or amount of amphetamine-class drugs in a test sample, to a novel class of tracer compounds used as reagents in such procedures, and to immunogen compounds used to raise antibodies for use in such procedures.
2. Description of Related Art
Amphetamine-class drugs are sympathomimetic phenethylamine derivatives having central nervous system stimulant activity. These drugs have been used for the treatment of obesity, narcolepsy and hypotension. Excessive use of these drugs, however, may lead to tolerance and physical dependence, and because of their stimulant effects the drugs are commonly abused. Physiological symptoms often associated with very high amounts of ingested amphetamine-class drugs include elevated blood pressure, dilated pupils, hyperthermia, convulsion and acute amphetamine psychosis.
The biological fluid used most frequently for detecting or quantitating amphetamine-class drugs is urine. Other biological fluids, however, such as serum, plasma or saliva might be used as test samples. In the past, amphetamines have been detected by a number of techniques including thin-layer chromatography (TLC), gas chromatography (GO) and high performance liquid chromatography (HPLC). These methods generally involve complicated chemical extractions of the drugs from the test sample, procedures which require trained personnel and lengthy assay times.
Binding assays are a preferred alternative to the chemical methods such as GC, TLC and HPLC for the detection of arialyres. Binding assays for detecting antigens and antibodies depend upon the immunological reactivity which characterizes these substances. Generally, these assays are collectively termed immunoassays.
Immunoassay techniques take advantage of the mechanisms of the immune systems of higher organisms, wherein antibodies are produced in response to the presence of antigens which are pathogenic or foreign to the organisms. One or more antibodies are produced in response to and are reactive with a particular antigen, thereby creating a highly specific reaction mechanism which can be used in vitro to determine the presence or concentration of that particular antigen in a biological sample.
Competitive binding immunoassays for measuring analytes of interest are based on the competition between the analyte in the test sample and a labeled reagent (i.e., tracer) for a limited number of binding sites on a binding member (e.g., an antibody) that is specific for both the analyte and tracer. Generally, the concentration of analyte in the sample determines the amount of tracer that will bind to the antibody. The amount of tracer/antibody complex produced can be quantitatively measured and is inversely proportional to the quantity of analyte in the test sample.
Fluorescence polarization provides a means for measuring the amount of tracer/antibody complex produced in a competitive binding immunoassay. Fluorescence polarization techniques are based on the principle that, when excited by linearly polarized light, a fluorescently labeled reagent will rotate rapidly, and fluorescent light emitted by that rotating tracer becomes partially depolarized due to the rapid rotation. As a result, the tracer will emit fluorescence with a degree of polarization inversely related to the tracer's rate of rotation, i.e., the higher the rotation the lower the polarization of the emitted light (or the greater the depolarization of the emitted light). The speed of rotation and the amount of depolarization decrease when the tracer becomes bound to a heavier molecule, such as when it becomes bound to the comparatively heavier antibody molecule. If a reaction mixture containing a fluorescent tracer/antibody complex is excited by linearly polarized light, then the emitted light generally remains polarized because the fluorophore in the complex is constrained from rapidly rotating. When a "free" tracer (i.e., tracer that is not bound to an antibody) is excited by linearly polarized light, its rotation is much faster than that of the tracer/antibody complex, and therefore, depolarization of the emitted light is increased.
By comparing standard preparations containing known concentrations of analyte to test samples containing unknown levels of the analyte, the fluorescence polarization technique provides a quantitative means for measuring the amount of tracer/antibody complex produced in a competitive binding assay. This technique is currently being employed by Abbott Laboratories in its commercially available TDx.RTM. Therapeutic Drug Monitoring System (as described in U.S. Pat. No. 4,269,511 and U.S. Pat. No. 4,420,568) and its commercially available IMx.RTM. and ADx.TM. automated instruments.
As disclosed in the '511 and '568 patents, because the tracer must compete with the analyte for binding to the antibody in a fluorescence polarization immunoassay (FPIA), the tracer must possess a molecular structure sufficiently similar to the arialyre so as to be recognized by an antibody specific for the analyte. For this reason the tracer is also referred to as a fluorescently labeled analyte-analog, a substantial portion of which has the same spatial and polar organization as the analyte to define one or more determinant sites capable of competing with the arialyre for the binding sites on the antibody.
An accurate and reliable immunoassay for the detection or quantification of a specific amphetamine-class compound requires that antibody cross-reactivity, i.e., the recognition of compounds other than the desired analyte, be minimized. Copending U.S. patent application Ser. Nos. 010,355 (filed Feb. 3, 1985) and 265,361 (filed Oct. 28, 1988) disclose assay reagents and FPIA methods for quantitating amphetamine and methamphetamine in test samples while eliminating phenethylamine cross-reactivity.
To date, however, no fluorescence polarization immunoassay has been disclosed which enables the screening of a test sample for a broad range of amphetamine-class drugs. Accordingly, a need exists for providing an assay and reagents for performing an accurate and sensitive FPIA for the simultaneous detection of the presence or amount of amphetamine-class drugs.

Reagents, methods and kits for an amphetamine-class fluorescence polarization immunoassy


A tool insert having a cemented carbide substrate with a recess formed in one end of the substrate and having an abrasive compact located in the recess and bonded to the substrate. The cemented carbide substrate has two ends joined by a side, and the recess formed in the substrate has a side and a base, with the side sloping inwards towards a center point of the base. The abrasive compact includes a top surface which provides a cutting surface or edge for the tool insert, a bottom surface which is complementary to the base of the recess, and a side surface which is complementary to the side of the recess.

This invention relates to tool inserts.
Tool inserts which consist of an abrasive compact bonded to a cemented carbide substrate are known in the art and are used extensively in tools such as mining picks, cutting tools and drill bits. The abrasive compact may be a diamond or cubic boron nitride abrasive compact. Such tool inserts have been extensively described in the patent literature, for example in British Patent No. 1,489,130 and U.S. Pat. Nos. 3,745,623 and 3,743,489.
British Patent No. 2,146,058 describes a cutting tool for a mining machine which comprises a holding lug, one end of which is adapted for mounting in a working surface of the machine, and the other end of which is provided with a socket, and a cutting insert located in the socket and secured to the lug. The cutting insert comprises an essentially hemispherical abrasive compact bonded to a cemented carbide substrate. The hemispherical shape abrasive compact provides a curved cutting edge for the cutting tool. In an alternative embodiment, the cutting insert comprises a cemented carbide substrate having a curved hemispherical end to which is bonded a thin skin of abrasive compact. Cutting inserts of the type described by this British patent, it has been found, give rise to stresses at the carbide/compact interface during brazing of the insert into the socket of the holding lug. South African Patent No. 84/0643 describes a tool insert which comprises a disc-shaped abrasive compact backed by cemented carbide and surrounded around at least 75% of its circumference by cemented carbide. The cutting edge is provided either by the cemented carbide or by an exposed edge of the abrasive compact.


A method for transforming a wrapped key token into a protected key may be provided. The protected key is protected by a volatile master key kept in the firmware of a virtual server. The method comprises creating an isolated virtual server that maintains a master key. The virtual server and the isolated virtual server share parts of same hypervisor's firmware. The method further comprises configuring an association—using a shared secret—between the virtual server and the isolated virtual server. The method further comprises establishing a secure communication channel between the virtual server and the isolated virtual server, based on the secret, and providing to the virtual server the wrapped key token comprising a random key wrapped by the isolated virtual server master key, and providing to the virtual server, in response to submitting the wrapped key token, via a second service, the protected key.

Securing content—in particular in enterprise computing—continues to be one of the most important topics on a CIO's (chief information officer) agenda. In the meantime, encryption of data—in particular in cloud computing environments—has become standard now. However, in order to re-access the data—e.g., the encrypted data—a decryption key is required. Therefore, the decryption key becomes the security bottleneck. Once a decryption key has gotten into the wrong hands, the previously protected data may no longer be protected, because unwanted access via a stolen key may be possible. Central management of encryption and decryption keys may be one option to address the problem; however, it may also represent a vulnerability, because it may provide an obvious target for intruders.
In some environments, data access keys in the form of protected keys are used to secure the data access keys themselves. Protected keys are keys encrypted by a volatile key encryption key (KEK) of a CPU/firmware (FW) which cannot be accessed in plaintext form by the operating system and which becomes invalid at certain events (e.g., system boot).
Currently, (re-)generating protected keys in a secure manner requires a hardware security module (HSM) that is tightly coupled to the CPU/FW which may be implemented together with an IBM z System and an IBM Crypto Express adapter. However, tightly coupled HSMs are expensive and are restricted in number, e.g., by a limited number of I/O slots for crypto adapters in a computing system, in particular in mainframe computing systems. Thus, there continues to be a need for a trusted management system for protected keys, without a central point of control which may be vulnerable to intrusion attempts.

Transforming a wrapped key into a protected key

International Business Machines Corporation


A headrest structure is equipped with a headrest main body; a headrest stay that supports the headrest main body; and a stopper member, a first end portion of the stopper member configuring a fixing portion fixed to the bottom end portion of the headrest stay, a second end portion of the stopper member configuring a stopper portion that is inserted into a support portion and is formed with a claw portion, when the stopper portion is inserted into the support portion, the claw portion resiliently deforming, when the stopper portion has been completely inserted into the support portion, the claw portion resiliently rebounding such that the outer diameter of the claw portion exceeds the inner diameter of the support portion, and when the stopper portion moves in a direction of exiting from the support portion, the claw portion catches on an end portion of the support portion.

1. Technical Field
The present invention relates to a headrest structure that supports the head of an occupant.
2. Related Art
Previously known headrest structures are provided with a pull-out preventer at a bottom end portion of a headrest stay to prevent the headrest stay from exiting from a seatback unintentionally. For example, a headrest structure is disclosed in Japanese Patent Application Laid-Open (JP-A) No. 2006-346342 wherein a slit is provided at a bottom end portion of a headrest stay and a rotational stopper is axially supported in the slit. The headrest stay is prevented from exiting from the seatback unintentionally by the rotational stopper catching on an end portion of a headrest bush provided at the seatback.
However, in conventional structures plural mechanical machining operations need to be performed, such as machining slits and machining holes, in order to provide the pull-out preventer to the bottom end portion of the headrest stay. The pull-out preventer is also configured from plural components, such as the rotational stopper and a shaft for axially supporting the rotational stopper. A significant number of steps is therefore required to assemble these components.


An electronic imaging apparatus includes a connecting section connected to an optical apparatus; an optical element having a preset transmittance with respect to light in a preset wavelength region, incident from the optical apparatus; and an electronic image sensor receiving the light transmitted through the optical element.

1. Field of the Invention
This invention relates to an electronic imaging apparatus used to photograph (image) a specimen, and in particular, to an electronic imaging apparatus for microscopes used in a microscope.
2. Description of Related Art
FIG. 1 shows a conventional example where an imaging apparatus of a type in which a film is used is attached to a microscope.
In a microscope 11 of FIG. 1, light from a light source 13 in a source device 12 is rendered nearly parallel by a collector lens 14 and is reflected by a mirror 15 to irradiate a specimen (not shown in the figure) mounted on a stage 16. Light from the specimen is incident on a camera 18 through an objective lens 17 so that an image of the specimen is formed.
The camera 18 is attached to the microscope 11 through a mount, not shown, and light incident through the microscope 11 is imaged on the surface of a loaded film 19.
Also, in FIG. 1, reference numerals 20 and 20′ represent eyepieces, numeral 21 represents a filter, 22 represents a driving means for moving the filter in and out of the optical path, and 23 represents a microscope support. Reference numeral 24 denotes a prism box for recognizing focusing and framing or calculating the amount of exposure and 25 denotes a shutter for exposure.
As imaging apparatuses used for microscope photography in recent years, electronic imaging apparatuses using electronic image sensors, such as CCDs, have been widely used. This is due chiefly to three factors: (1) the specimen can be easily imaged (photographed), (2) a photographed image is easily processed, and (3) the control and distribution of the photographed image are facilitated.
The electronic image sensors maintaining the leading position at present on a consumer market are being reduced in cost. Consequently, the cost of the entire imaging apparatus is also reduced so that a user can more easily purchase the microscope.

Electronic imaging apparatus and microscope apparatus using the same


Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity semiconductor layers. The microcrystalline semiconductor region has a surface having a projection and depression on the gate insulating layer side. The microcrystalline semiconductor region includes a first microcrystalline semiconductor region which is not covered with the amorphous regions and a second microcrystalline semiconductor region which is in contact with the amorphous semiconductor regions. A thickness d1 of the first microcrystalline semiconductor region is smaller than a thickness d2 of the second microcrystalline semiconductor region and d1 is greater than or equal to 30 nm.

1. Field of the Invention
The present invention relates to a thin film transistor and a method for manufacturing the thin film transistor, and a display device to which the thin film transistor is applied.
2. Description of the Related Art
As a kind of field-effect transistor, a thin film transistor in which a channel formation region is formed in a semiconductor layer formed over a substrate having an insulating surface is known. Techniques in which amorphous silicon, microcrystalline silicon, or polycrystalline silicon is used for a semiconductor layer used in the thin film transistor have been disclosed (see Patent Documents 1 to 5). A typical application of thin film transistors is a liquid crystal display television device, in which thin film transistors have been put to practical use as a switching transistor for each pixel that constitutes a display screen.

Thin film transistor and manufacturing method thereof

Semiconductor Energy Laboratory Co., Ltd.


Provided is a method for using selective non-catalytic reduction to reduce nitrogen dioxide in exhaust gas generated during an olefin production process. Nitrogen dioxide generated in a catalyst regeneration step of a continuous PDH process can be efficiently removed by the method of the present disclosure. Ultimately, the generation of visible fumes can be prevented through the removal of nitrogen dioxide.

Olefins such as ethylene and propylene are widely used in the petrochemical industry. Typically, these olefins are obtained through thermal cracking of naphtha. However, in the petrochemical industry, larger amounts of olefins are required, and in order to satisfy this demand, an olefin production method using a process of dehydrogenation of lower hydrocarbons such as ethane and propane in the presence of a catalyst has been developed. In this regard, KR 10-1758226 discloses a catalyst for preparing an olefin through dehydrogenation of a hydrocarbon.
The catalyst used in the dehydrogenation process may be regenerated through reaction with air. However, exhaust gas containing nitrogen dioxide is generated in the catalyst regeneration step at a high temperature, which is undesirable. The exhaust gas discharged from the catalyst regeneration step is discharged into the atmosphere through a stack. In general, nitrogen oxide (NOx) contained in exhaust gas includes nitrogen monoxide, nitrogen dioxide, and nitrous oxide, and is a representative substance that causes environmental pollution. Exhaust gas controlled to the level that the nitrogen oxide content in exhaust gas satisfies emission limits in accordance with recent stringent environmental standards is discharged into the atmosphere by changing processing conditions. However, even when the nitrogen oxide content in exhaust gas meets the emission limit, if the concentration of nitrogen dioxide in exhaust gas exceeds about 15 ppm, a yellow plume may occur. Such a yellow plume causes serious psychological and visible impacts on nearby residents and needs to be eliminated. In order to prevent the generation of yellow plumes, a technique capable of decreasing nitrogen dioxide content in exhaust gas is required.
In order to decrease nitrogen dioxide content in exhaust gas in the related art, research into combustion control and exhaust gas treatment technology in the fields of power plants or internal combustion engines has been continuously conducted. Techniques for decreasing nitrogen oxide content through exhaust gas treatment are largely classified into two types: selective catalytic reduction (SCR) using a catalyst and selective non-catalytic reduction (SNCR) not using a catalyst.
SCR is effective at removing nitrogen dioxide, but requires an increase in the size of a facility in order to install a catalyst apparatus, and thus there occur problems in which a high investment cost is required in order to eliminate even a small yellow plume caused by nitrogen dioxide and the installation area increases due to the catalyst apparatus installation, so additional land has to be obtained for the facility expansion. A method of decreasing the generation of yellow plumes using SCR is disclosed in KR 1999-0069935.
On the other hand, SNCR is low in efficiency of decreasing nitrogen dioxide content compared to SCR, but the installation cost and period are short and a large additional facility is not required, and thus the nitrogen dioxide content generated during processing may be more effectively decreased. A method of decreasing the generation of yellow plumes using SNCR is disclosed in KR 10-1199265. However, the above related patents merely disclose nitrogen dioxide removal technology for application to power plants and internal combustion engines, but do not disclose nitrogen dioxide removal technology suitable for use in the PDH process.
It is not appropriate to directly apply the above related techniques for decreasing the nitrogen dioxide content generated during the operation of power plants in order to decrease the nitrogen dioxide content generated in an olefin production process. This is because the composition of exhaust gas generated in a power plant is different from the composition of exhaust gas generated in a PDH process, and more particularly because NO2 content in exhaust gas is much higher due to the catalytic reaction in exhaust gas generated in the PDH process than in typical exhaust gas generated in a power plant. Moreover, the technique for decreasing nitrogen dioxide content is applied for a short period of time at medium and low loads in power plants, but must be applied all the time in the PDH process, in which a reaction is continuously carried out for 24 hr. Accordingly, it is necessary to develop a technique for decreasing nitrogen dioxide content suitable for the PDH process, separately from the technique for decreasing nitrogen dioxide content that is applied to conventional power plants and internal combustion engines.
In particular, only the technique of removing nitrogen dioxide using SCR in the PDH process is commercialized at present, and the use of SNCR in the PDH process has not yet been realized. Upon SCR in a continuously operating PDH process, the lifetime of the catalyst is short compared to intermittent use thereof in power plants. Furthermore, the case in which the operation of the process is stopped in order to replace the catalyst is problematic in that the processing loss is enormous. Accordingly, the technique for decreasing nitrogen dioxide content using SNCR in the PDH process is becoming more and more important.

Method for reducing nitrogen dioxide in exhaust gas generated during olefin production process


A facsimile apparatus with telephone system is provided with a facsimile system and an automatic call recording telephone system for transfer to the facsimile reception after connection of automatic call recording by detecting the CNG signal, or the silent condition for the predetermined period and comprises a timer which starts operation after connection for automatic call recording and a controller which does not detect the silent condition for the predetermined period after measuring the predetermined time by the timer.

1. Field of the Invention
The present invention relates to a facsimile apparatus with telephone system and a receiving method of a facsimile apparatus providing an automatic call recording mode.
2. Prior Art
Certain facsimile apparatus are provided with two telephone terminals for connection of a telephone set (TEL 1) only for facsimile and an external telephone set or automatic call recording telephone set (TEL 2).
Operations of such facsimile apparatus will be explained hereunder. Namely, it is decided whether or not a ringing signal of 16 Hz has been received from an exchange through the telephone line. Next, the number of times the ringing signals are received is counted. Then it is decided whether the handset of TEL 1 has been lifted whether a call has been terminated to the telephone set TEL 2 (which has the automatic call recording mode). Two or six times of ringing of the bell by the ringing signal means the call has been terminated to the TEL 2 having the automatic call recording mode.
If the ringing of bells is counted up to seven times, and the handset of TEL 1 has not been lifted and the call has not been terminated to TEL 2 having the automatic call recording mode, then the facsimile reception process is executed.
Meanwhile, when the handset of TEL 1 has been lifted or the call has been terminated to TEL 2 having the automatic call recording mode, it is decided whether or not a CNG signal has been transmitted or whether a silent condition is continued for a predetermined period. If the CNG signal has been transmitted, then a distant party executes the facsimile reception process by deciding the automatic transmission in the facsimile mode. On the other hand, if the silent condition is continued for the predetermined period, then a distant party executes the facsimile reception process by deciding the manual transmission in the facsimile mode.
However, if a distant party has originated a call and the TEL 2 having the automatic call recording mode is recording a message, a silent period may sometimes occur for the predetermined period because, for example, the distant party may stop transmission of the message. In this case, the conventional apparatus usually changes the operation mode to the facsimile reception mode by detecting such silent condition for the predetermined period.
It is therefore an object of the present invention to provide, considering such background, a facsimile apparatus with a telephone system which eliminates such problem.
In a facsimile apparatus providing an automatic call recording mode as explained above, the manual reception mode realizes reception of call terminated only by telephone system. For the termination of call, a called party is capable of making conversation with a calling party through the telephone system. In a case where the calling party requests the transmission of facsimile data during the conversation, the facsimile apparatus may be changed to the facsimile reception mode using this manual reception mode. When the facsimile signal is terminated, in place of a call, it can be detected from the sound heard from the handset being taken off hook. Therefore, facsimile reception can be realized by switching the operation mode to the facsimile reception mode with an operating button switch.
In the facsimile automatic reception mode, the operation mode is automatically switched to the facsimile reception mode after the bell rings for predetermined number of times, for example, five times. When the handset is taken off hook while ringing of bell of five times, the operation mode is transferred to the telephone conversation mode. Therefore, if the facsimile signal is terminated when-the handset is taken off hook, the facsimile apparatus is changed to the facsimile reception mode for reception-of facsimile signal.
On the other hand, when the facsimile apparatus is set to the automatic call recording mode, if the handset is not taken off hook within a predetermined number of rings, for example, three rings, then the apparatus is transferred to the automatic call recording mode and a message for recording conversation is transmitted and the message from the calling party is recorded. In the case of automatic call recording mode, if a facsimile signal is received by the automatic facsimile transmission mode, facsimile reception is disabled.
Therefore, a facsimile apparatus, which provides the function of automatically switching the automatic call recording mode and the facsimile reception mode, wherein the automatic call recording mode is transferred to the facsimile reception when a facsimile signal is received through detection of a CNG signal, has been developed.
FIG. 4 is a flowchart illustrating the automatic call recording/automatic facsimile reception switching mode as explained above. When a call is received, the flowchart starts. In the step S111, the number of times of ringing of bell is counted. When the ringing of the bell is counted three times, the apparatus is connected to the line in the step S112, considering that the apparatus is internally in the off-hook condition. Thereafter, in the step S113, the CNG signal is detected. If a call is received, then the CNG signal will not be detected. Therefore, operation transfers to the step S114 and the transmission of message for recording conversation and the ordinary automatic recording of conversation are carried out. Upon completion of the transmission and recording, the flowchart comes to the end. In the step S113, when if a CNG signal is detected, then operation transfers to the step S115 and the facsimile reception procedures are executed.
When the apparatus is set to the automatic call recording mode, if a call is received while a person is at home, then, the operation transfers to the step S117 from the step S116 in a case where the handset is taken off hook within three rings of the bell, thereby entering the telephone conversation mode. It is now possible to make conversation as explained above. In the case of facsimile transmission, the apparatus is switched to the facsimile reception mode with an operating button for facsimile reception.
Since the automatic call recording/automatic facsimile reception switching function does not become effective if a call is not received to the automatic call recording telephone set, a call cannot be received in some cases to the automatic call recording telephone set in the step S112 because such telephone set is defective and the handset cannot be set to the off-hook condition. In this case, a problem arises in that if a facsimile signal is received, reception is disabled.
The present invention has been proposed to solve such problem and it is therefore another object of the present invention to provide a facsimile reception method which ensures facsimile reception even if a fault occurs in the automatic call recording telephone system.

Facsimile apparatus with telephone system


A super-shield system for protecting a computer from malicious software uses a whitelist to determine if a program is safe to run. As new malicious software is created, inadvertent attempts at execution of executables including such malicious software is prevented being that the new malicious software are not listed in the whitelist. When attempts are made to run unknown software, the executable is forwarded to a server where further analysis is performed to determine if the executable contains suspect code (e.g., malicious software).

Currently, many software systems attempt to provide a secure computing environment. Such systems are typically referred to as firewalls, anti-malware software, etc. Any computer (including cellular phones) that is connected to a network is subject to intrusion via that network.
One form of intrusion is possible when the target computer is poorly administered, leaving it accessible from other computers on the network. This is typically a firewall and/or permissions issue.
Another form of intrusion is possible by logging into the computer from another computer on a network. This type of intrusion typically requires knowledge of a username and password. Intrusion is usually accomplished when the user creates an easily discoverable password (e.g. the user's last name followed by a '1') or when the user does not safeguard the password. An example of such lack of safeguarding the password is by writing the password on a sticky note that is adhered to the computer or by entering the password in a public place where another might see the password or the keystrokes being typed.
Today, many intrusions start with reception of malicious software. Malicious software is typically a software program that is installed on the user's computer sometime without permission or knowledge of the user. In some instances, the malicious software is delivered to the user in an email, typically an attached file. Upon opening of the file, the malicious software is copied onto the user's computer storage and begins to run. Many malicious software programs start out by sending duplicate copies of the malicious software to everybody on the user's email list, also known as a "worm". Unsuspecting friends of the user receive a message they think was sent by the user and, trusting the user, the friends open the message, thereby infecting the friend's computer with the malicious software.
Existing anti-malware software typically relies solely on a blacklist approach to reduce intrusion from malicious software. A blacklist is a record of all currently recognized malicious software. With anti-malware software that uses the blacklisting method, when an executable program tries to run, the blacklist anti-malware software scans the program, looking for signatures that match a signature in a blacklist. As new forms or versions of malicious software are deployed, typically, anti-malware users are subject to being infected by new/previously undetected malicious software until signatures are created for the new malicious software, the signatures are added to the blacklist, and the updated blacklist is distributed to users of the anti-malware software, through software updates or from the cloud.
Unfortunately, from the time a new malicious software is introduced to when it is detected, added to the blacklist, and distribute to each user's anti-malware software, there is a window of opportunity for intrusion by the new malicious software. If a user's anti-malware software blacklist is not updated with the new malicious software signature, the new malicious software can infect the user's computer when the user executes the new malicious software; for example by opening an attachment that contains the new malicious software. The anti-malware software will not recognize the attachment as malicious because the attachment is not presently in the black list. Therefore, the new malicious software will be allowed to execute.
The answer to this problem is a system that will protect from malicious software, both previously recognized, and brand new malicious software.

System, method, and apparatus for computer security


Computer vision and image characteristic search is described. The described system leverages visual search techniques by determining visual characteristics of objects depicted in images and comparing the determined characteristics to visual characteristics of other images, e.g., to identify similar visual characteristics in the other images. In some aspects, the described system performs searches that leverage a digital image as part of a search query to locate digital content of interest. In some aspects, the described system surfaces multiple user interface instrumentalities that include images of patterns, textures, or materials and that are selectable to initiate a visual search of digital content having a similar pattern, texture, or material. The described aspects also include pattern-based authentication in which the system determines authenticity of an item in an image based on a similarity of its visual characteristics to visual characteristics of known authentic items.

Conventional text-based search systems depend on a user's ability to express a goal of a search using text. Thus, although these systems may function well in instances in which a goal is readily expressible using text (e.g., find "red running shoes"), these systems may fail in instances in which it is difficult to express this goal using text. This problem is further exacerbated by a requirement in these conventional systems that a common understanding is reached between how items in a search result are identified and techniques used to express the goal, for instance, that both a seller listing an item and prospective buyer searching for the item agree that the item is described with text as "red running shoes." Further still, text descriptions provided by users and describing items depicted in images may not be accurate. Accordingly, conventional systems that rely on these user-provided descriptions to list items may propagate inaccurate descriptions of the items, e.g., by surfacing a listing with an inaccurate description to other users.


A hybrid integrated circuit including: a circuit substrate on which at least one of an active and passive semiconductor element is formed; a lead frame having a plurality of leads and a support plate with an opening formed therein, and supporting the circuit substrate thereon; and a mold of resin for packaging the circuit substrate, support plate and part of the leads of the lead frame, wherein a bottom surface of the circuit substrate is exposed and made to contact the mold resin through the opening. The circuit has a ratio of the exposed bottom surface to the entire bottom surface greater than 50%, and a ratio of surface area of the circuit substrate to a principal surface area of the mold of greater than 60%. There are a plurality of support plate configurations. The circuit relieves the mechanical stress caused in the mold package and eliminates cracking of the mold. Further, a package structure can be made resistant to deformation by appropriately selecting mold thicknesses above and below the circuit substrate.

The present invention relates to an integrated circuit and, more particularly, to a hybrid integrated circuit, including both active and passive elements, and a novel package structure therefore. The present invention is intended to make a hybrid integrated circuit more resistant to the effects of repeated thermal expansion and contraction.
As a package structure for semiconductor integrated circuits or hybrid integrated circuits, an epoxy resin is widely used as a molding material, an insert-mold method is utilized which is suitable for mass production, and a circuit substrate and a lead frame are incorporated therein during the mold process.
FIGS. 1(a) and 1(b) show, respectively, a schematic cross section of a conventional hybrid integrated circuit and a plan view of a lead frame used therein. The lead frame 60 has a square support plate 61 centrally arranged, which sometimes is called a stage or tab. On the support plate 61 a circuit substrate 62 is mounted and is selectively connected to leads 63 by a wire bonding method. The above structure is finally molded as a package 64 using epoxy resin material. The circuit substrate 62 comprises a base member 66 made of, e.g., alumina ceramic, epoxy glass or silicon, and active and passive elements 67 disposed on the base member 66.
In such a package structure, differences in expansion coefficients, adhesion characteristics, etc. among the parts thereof can cause cracking problems in the mold package.
Usually, the expansion coefficient of the base member 66 is smaller than that of the molding material, and adhesive strength between the mold material and the support plate 61 of metal is lower than that of the mold material to the base member. When the hybrid integrated circuit (sometimes hereinafter called "device") is put into operation and subjected to repeated heat cycles of expansion and contraction, the lower portion of the mold package 64 cannot withstand the stress, which concentrates along a periphery of the support plate 61, and finally the mold package 64 of the device develops a crack 65 along a side or neighboring two sides of the square periphery of the support plate as shown in FIG. 1(a).
In order to relieve the stress on the support plate 61 due to an expansion difference relative to the mold material, it has been proposed in Japanese Unexamined Patent Publication No. SHO-52-95173 dated Aug. 10, 1977 by S. Kobayashi, to form the lead frame with an opening or void portion in the support plate. This publication discloses that the support plate of the lead frame is composed of a surrounding peripheral frame portion and either a single or a plurality of openings formed therein.
Another potential solution was disclosed in the Japanese Unexamined Patent Publication No. SHO-63-81966, dated Apr. 12, 1988 by H. Tsutani, et al. This publication discloses a device including a lead frame and a support plate having a plurality of cuts from the periphery toward the center of the support plate.
The above two disclosures are concerned with a semiconductor integrated circuit having a single monolithic semiconductor chip mounted on the support plate. Generally the semiconductor chip size (surface area) is small compared with the outline dimensions of the mold package. The hybrid integrated circuit including a circuit substrate and a plurality of active and passive elements mounted thereon is larger and tends toward higher integration, and thus the size of the circuit substrate occupies a substantial part of the mold package size. The stress generated in the mold package during operation, then, becomes a serious problem.

Hybrid integrated circuit package structure