A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180xc2x0. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180xc2x0. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180xc2x0.

Field of the Invention
The invention relates generally to the field of manufacturing integrated semiconductor circuits, such as VLSI and ULSI circuits, using photolithographic methods. In particular, the invention relates to the increase of the resolution capacity of conventional photolithography through the use of alternating phase masks.
In the manufacturing of integrated semiconductor circuits, the mask structures allocated to the circuit elements are optically imaged on light-sensitive layers on the wafer in a conventional manner. Due to the diffraction effect, the resolution capacity of such an imaging system is limited, and mask structures having dimensions below the reciprocal value of this resolution capacity, called the critical structures, are imaged in blurred or unfocused fashion. This leads to undesired strong correlations of the circuit elements, and thus to an adverse effect on the circuit functionality.
These difficulties can be overcome by exploiting the destructive interference effect of two closely adjacent and coherent light beams that are phase-displaced by 180xc2x0, and converting the conventional masks concerned into alternating phase masks, in which each critical structure is provided with two phase shifters in order to produce the required phase displacement.
The various types of phase masks are for example described in the book xe2x80x9cTechnologie hochintegrieter Schaltungen,xe2x80x9d by Widmann, Mader, and Friedrich, 2nd ed., Springer-Verlag, pp. 135ff. A detailed overview of phase mask technology is contained in the publications xe2x80x9cImproving Resolution in Photolithography with a Phase-Shifting Mask,xe2x80x9d by M. D. Levenson et al., in IEEE Trans. Electron. Devices 29 (1982), 1828ff., and xe2x80x9cWavefront Engineering for Photolithography,xe2x80x9d by M. D. Levenson 993, in Physics Today, Jul. 1993, p. 28ff.
The use of so-called strong phase masks, including both the already-mentioned alternating phase masks and also phase masks without chromium, requires that in each affected level, the transparent phase-shifting structures are assigned to one of two phases, having a phase difference xcex94"PHgr"=180xc2x0. Here the following two cases must be distinguished. In what is known as a dark-field phase mask, transparent structures correspond to the circuit elements (e.g., printed conductors), and phases can be assigned to them, while opaque mask fields are formed by regions covered with chromium. In contrast, in a so-called bright-field phase mask the opaque regions, covered with chromium, of the phase masks represent the circuit elements, and the regions situated between them are transparent. In the latter case, suitable regions in the vicinity of the opaque chromium regions must be designated as phase-shifting elements. The creation of the phase-shifting elements takes place according to particular design rules known from the prior art, and is described for example in U.S. Pat. No. 5,537,648.
However, in view of the complexity of modern circuits, and the requirement of two elements that are phase-displaced by 180xc2x0 to one another at each critical structure, phase conflicts are conceivable. A phase conflict is present precisely when the phase shifters on both sides of a critical structure are erroneously assigned the same phase, or when, due to the interaction of the phase-shifting elements, the destructive interference effect occurs at an undesired location on the already-mentioned light-sensitive layer. The phase assignment for the different phase-shifting elements thus represents a mathematical-combinatorial problem that does not have a general solution. Because in principle the phase assignment can lead to different results, and different phase assignments can occur for one and the same cell of a hierarchical layout, the phase assignment in an automated program must finally be carried out at the finished circuit layout. An automated checking routine is therefore required that examines a circuit layout in order to see whether a phase assignment is possible at all. This check should be complete, and should localize the problem point as well as possible, i.e., should determine its actual point of origin. The latter is not self-evident, because the location at which it is discovered that the combinatorial problem does not xe2x80x9cwork outxe2x80x9d may be located far from the actual point of origin.
After phase conflicts have been determined in an automated routine, they can be resolved in two fundamentally different ways. First, the circuit design can be modified slightly at the locations of the localized phase conflicts, for example by displacing printed conductor structures, so that the phase conflicts are removed. On the basis of this modified circuit design, a successful phase assignment can then be carried out in order to create a phase mask. However, this method is avoided whenever possible, because it is not in accord with the miniaturization process, governed by Moore""s Law, in microelectronics.
Second, the circuit design can remain unmodified, and instead phase conflicts can be solved by assigning two different phases to individual phase-shifting elements. However, this has the consequence that during exposure a dark region occurs at the boundary line between the two different phase regions, which would lead to an interruption. For this reason, in this case an additional exposure step must be carried out using what is called a trim mask, by means of which the occurrent dark boundary regions are separately exposed at a later time. However, in such a subsequent exposure using a trim mask, there is then in turn the danger that, if the dimensions of the trim mask structure are below the reciprocal value of this resolution capacity of the exposure system, these photolithographically critical structures will be imaged in blurred or unfocused fashion, which can lead to an adverse effect on the functionality of the integrated semiconductor circuits.
In the prior art, various methods are known for testing a layout for phase conflicts. In the publication xe2x80x9cHeuristic Method for Phase-Conflict Minimization in Automatic Phase-Shift Mask Design,xe2x80x9d by A. Moniwa et al., in Jpn. J. Appl. Phys., vol. 34 (1995), pp. 6584-89, a graph-theoretical approach is described in which a set of phase-shifted elements is assumed, and from this set a planar undirected graph is formed, taking into account the technological requirements. In addition, U.S. Pat. No. 5,923,566 describes a computer-implemented routine that verifies whether an existing circuit design can be imaged onto a phase mask, or whether localized phase conflicts are present. However, neither of the methods described above works optimally in the acquisition of phase conflicts. First of all, both these methods prove to be inefficient, because in them for example certain phase conflicts are indicated twice. Second, they prove to be inadequate, because with them certain other phase conflicts cannot be acquired. In addition, in the cited references such phase conflicts are not resolved, and moreover the problem is also not addressed of an insufficient subsequent exposure of dark boundary regions with the known trim mask structures.
U.S. Pat. No. 5,523,198 describes a method in which boundary sections that were not sufficiently exposed in a first exposure step using a phase mask are subsequently exposed in a second step using a pure light-dark mask. In addition, a method is described in which, in two successive exposure steps, phase masks and a trim mask are used. Such trim masks are additionally known from the international PCT publication WO 2001/06320 A1 and from Japanese patent application JP 2000-338637 A.
It is accordingly an object of the invention to provide an improved method for determining possible phase conflicts on alternating phase masks, which overcomes the above-mentioned disadvantages of the heretofore-known devices and methods of this general type and which allows for the automatic removal of these phase conflicts. It is a further object to provide a trim mask with which an exposure is ensured even of photolithographically critical dark structures.
With the foregoing and other objects in view there is provided, in accordance with the invention, a method for exposing a photoresist layer on a substrate wafer, which comprises the following method steps:
in a first exposure step, exposing the photoresist layer in first sections with a first exposure radiation and in second sections with a second exposure radiation, the first exposure radiation being phase-displaced by 180xc2x0 relative to the second exposure radiation, and the first and second sections adjoining one another in boundary regions that are not sufficiently exposed;
determining first and second boundary regions respectively having less than a given predetermined least distance from one another; and
in a second exposure step, reexposing the photoresist layer in the first boundary region with a third exposure radiation, and in the second boundary region with a fourth exposure radiation, the third exposure radiation being phase-displaced by 180xc2x0 relative to the fourth exposure radiation.
In other words, the objects of the invention are achieved with the inventive method for exposing a photoresist layer on a substrate wafer in which, in a first exposure step in which the photoresist layer is exposed in a first section with a first radiation and in a second section with a second exposure radiation, whereby there is a phase displacement of 180xc2x0 between the first exposure radiation and the second exposure radiation. The first and second sections thereby adjoin one another in boundary regions that are not sufficiently exposed in the first exposure step. After the determination of first and second boundary regions each having less than a particular predetermined least distance, i.e., photolithographically critical distance, from one another, in a second exposure step a subsequent exposure of the photoresist layer is then carried out in the first boundary region with a third exposure radiation, and is carried out in the second boundary region with a fourth exposure radiation, there being a phase displacement of 180xc2x0 between the third exposure radiation and the fourth exposure radiation. The remaining boundary regions can here be exposed with a further exposure radiation having arbitrary phase.
The advantage of the invention is that after the use of a phase mask even after the second exposure step, there remain no regions in the photoresist layer that are exposed in defective fashion due to diffraction effects. Defectively exposed regions in the second exposure step occur when two boundary regions that are to be subsequently exposed have a distance from one another that is so small in relation to the wavelength of the exposure radiation that undesirable diffraction effects occur during imaging.
Such diffraction effects occur in a conventional trim mask having structural dimensions that are smaller than the reciprocal value of the resolution capacity in the imaging, because in this case these photolithographically critical structures are imaged in blurred or unfocused fashion. This can lead to undesired strong correlations of the circuit elements, and thus to an adverse effect on the circuit functionality. In order to avoid this, according to the invention a phase shifting of the exposure radiation is provided also in the second exposure step, so that with the aid of the destructive interference effect, which is already exploited for the imaging of structures in the first exposure step, a defective exposure of the boundary regions that are to be subsequently exposed can be avoided. With the trim mask, fashioned as an alternating phase mask, through the destructive interference effect of the third and fourth exposure radiation with opposite phases all photolithographically critical structures at the boundary regions that are to be subsequently exposed are correctly imaged.
Advantageously, the exposure steps are carried out with the aid of a phase mask, the phase mask having regions that are transparent to light, which assigns a particular phase shift to the light passing through.
According to a preferred specific embodiment, if the inventive method is to be applied in a dark-field phase mask technology, the mask for the first and/or second exposure step is determined as follows:
In a first method step, critical regions are determined in which two adjacent, transparent regions provided for the phase mask have less than a particular predetermined least distance from one another.
In a second method step, overlapping regions are determined between rectilinear segments of the obtained critical regions and end regions of rectilinear segments, ending in the middle of transparent regions, of the critical regions, and degenerate critical regions are generated. The latter are obtained by subtracting overlapping regions from the critical regions.
In a third method step, coherent regions (xe2x80x9ccountriesxe2x80x9d) located outside the transparent regions and outside the critical regions are then determined, as are large outer borders of the countries and of the overlapping regions and end regions obtained in the previous method step.
Then, in a fourth method step, from each of the determined outer borders the number of segments of contact with the degenerate critical regions is determined, and, if the number is odd, a phase conflict is determined.
Finally, in a fifth method step, the phase conflicts are resolved by determining coherent layout regions and the region borders thereof, coherent layout regions being defined by the transparent regions and the critical regions located between them minus overlapping regions representing the end regions and the phase conflicts, and at least one connection path being produced between an outer border representing a phase conflict and either a nearest additional outer region border or an odd number of not-yet-connected large outer borders, which likewise represent phase conflicts; then the quantity of produced connection paths is reduced to those in which each phase conflict is contained exactly once, and then those regions (covering regions) of the connection paths are marked that are located over the transparent regions, and finally, for the phase mask the covering regions are fashioned as boundaries between two different regions of the phase mask to be manufactured, whose phase displacements have a phase difference of xcex94"PHgr"=180xc2x0.
According to a preferred specific embodiment, if the inventive method is to be applied in a bright-field phase mask technology, the mask for the first and/or for the second exposure step is determined as follows:
In a first method step, phase-shifting regions are respectively determined on both sides of opaque critical regions provided for the phase mask. Critical regions are defined in that they have less than a predetermined structural width.
Next, in a second method step overlapping regions are generated between rectilinear segments of the critical regions and end regions of rectilinear segments, ending in the middle of phase-shifting regions or regions of interaction between phase-shifting regions, of the critical regions, and degenerate critical regions are generated. The latter are obtained by subtracting overlapping regions from the critical regions.
In a third method step, coherent regions (countries) located outside the phase-shifting regions, regions of interaction, and critical regions, are determined, as are large outer borders of these countries, and of the overlapping regions and end regions obtained in the previous method step.
Finally, in a fourth method step, from each of the determined outer borders the number of segments of contact with the degenerate critical regions is determined, and if the number is odd, a phase conflict is determined.
In a fifth method step, the phase conflicts are then resolved in that coherent layout regions and the borders thereof are determined, coherent layout regions being defined through the phase-shifting regions, the critical regions, and the regions of interaction minus regions of overlap representing the end regions and the phase conflicts, and at least one connection path being produced between a large outer border representing a phase conflict and either a nearest additional external region border or an odd number of not-yet-connected large outer borders, which likewise represent phase conflicts; then the quantity of produced connection paths is reduced to those in which each phase conflict is contained exactly once, and then those regions (covering regions) of the connection paths are marked that are located over the transparent phase-shifting regions, and, finally, for the phase mask the covering regions are fashioned as region boundaries between two different regions of the phase mask to be manufactured, whose phase displacements have a phase difference of xcex94"PHgr"=180xc2x0.
According to the two inventive developments presented above, in a first step thereof a formalism is thus provided by means of which the direct convertibility of integrated semiconductor circuits into alternating phase masks B both dark-field and bright-field phase masks B is tested. This takes place through an explicit localization of the phase conflicts occurring in the corresponding layout, with the application only of the technical demands placed on the design. The set of phase conflicts determined with the aid of this formalism is complete and minimal, i.e., all existing phase conflicts are always determined, and existing phase conflicts are not indicated more than once.
Subsequently, the phase conflicts are removed through the described automated method. In the removal of the phase conflicts, both in dark-field and also in bright-field technology the connection paths are formed practically and rapidly in such a way that at first pairs of opposite edges of a respective large outer border and of an adjacent outer region border are determined, and subsequently at least one connection path is produced between the edges of each pair.
Since, however, the connection paths must later lead to phase jumps, i.e., sudden phase changes in the phase-shifting regions, in the group-by-group solution of the associated neighborhood problem only those edges are to be taken into account that are to be allocated to the large outer contour of the respective layout group and to the polygons representing phase conflicts, from which the contact segments are to be subtracted.
However, the connection paths do not necessarily run between edges of pairs of large outer borders representing the phase conflict and the layout group borders. Moreover, a connection path between two phase conflicts, or between a phase conflict and the outer contour of a layout group, need not necessarily be even; rather, it can run through countries having an even number of contact segments (i.e., no phase conflicts), and can assume a very complicated form. Its essential feature is that it connects a phase conflict with the additional external outer contour of its layout group, or connects two phase conflicts with one another.
After the production of the connection paths, these are reduced to a quantity of connection paths in which each phase conflict occurs only once. For the inventive removal of the phase conflicts, it is thus sufficient respectively to retain only one connection path between two phase conflicts, or between a phase conflict and the outer contour of its layout group, after the reduction.
Subsequently, those regions of the connection paths that are located over the phase-shifting regions are taken into account or are marked in some way. Then, for the preparation for the manufacture of the first phase mask, the covering regions are formed as boundaries between two different regions of the phase mask to be manufactured. For this purpose, for example the covering regions can be subtracted from the phase shifters, and the regions of the first phase mask to be manufactured can be represented in a suitable matter, e.g., as two different colors of a two-color phase mask. The present invention describes a double exposure technique for the automatic handling of arbitrary layouts in phase mask technology. The mask for the second exposure process is thereby likewise a phase mask. This enables the handling of propagating phase conflicts. The second phase mask is automatically generated from the phase-shifting elements, the structures, and the connection paths between the borders, calculated using the above-explained formalism, for the automatic removal of phase conflicts.
In addition, according to the invention a trim mask is provided for use in the above-named method, with which a photoresist layer is exposed in a second exposure step after an exposure with a phase mask. The trim mask has a first region transparent to light and a second region transparent to light, in order subsequently to expose the regions in the photoresist layer that were artificially unexposed through the use of the phase mask in the first exposure step. The first light-transparent region and the second light-transparent region are formed such that the phase displacement of 180xc2x0 is obtained between the third exposure radiation, passing through the first transparent region, and the fourth exposure radiation, passing through the second transparent region. The isolated trim openings can be exposed with an additional exposure radiation having arbitrary phase. This trim mask has the advantage that it is suitable for the subsequent exposure of two regions on the photoresist layer that were artificially not exposed in a first exposure step. In particular in the propagation of phase conflicts, it happens that the artificially unexposed regions are located on both sides of a critical structure, and thus have a spacing that is too small for a precise imaging using conventional masking technology. Given a conventional trim mask, one would thus obtain a defective exposure between the subsequently exposed regions. In contrast, the inventive trim mask has the advantage that, due to the destructive interference effect in the exposure of the artificially exposed regions in the second exposure step, it enables an exact imaging of the critical structure. The correction of the interferences through the boundary regions between the phase-shifting regions of the phase mask of the first exposure step thus does not have the result that the structure to be imaged is represented in unfocused fashion due to diffraction effects, or is destroyed by the second exposure step.
Advantageously, only those regions are provided with a 180xc2x0 phase displacement that relate to photolithographically critical structures, while all uncritical structures are exposed with the aid of a transparent region, without a fixedly predetermined phase displacement.
In the context of bright-field phase mask technology, a trim mask is thereby preferably used that consists of trim structures, a dark region, and an associated bright background, the trim structures being colored in such a way that those trim structures located at critical structures overlapped by connection paths receive opposed phases for the exposure radiation, whereby a phase displacement of 90xc2x0 to the bright background is maintained.
For application in the context of dark-field phase mask technology, the trim mask preferably consists of trim structures, a bright region, and an associated dark background, the trim structures being colored in such a way that those trim structures located at critical structures overlapped by connection paths receive opposed phases for the exposure radiation.
The trim structures are thereby determined, both in bright-field and also in dark-field phase mask technology, by parallel expansion along the phase shifters of the above-determined covering regions.
The two exposure masks in bright-field or dark-field phase mask technology can be divided into the following regions: critical structures (KR); uncritical structures (UKR); undecomposed phase shifters (PO); connection paths (VW) from the automatic removal of phase conflicts; segments (VWPO) of the connection paths over the undecomposed phase shifters (PO); segments (VWKR) of the connection paths over the critical structures (KR); artificially decomposed phase shifters (PZ) that correspond to the undecomposed phase shifters (PO) minus segments (VWPO) of the connection paths over the undecomposed phase shifters (PO); trim structures (TS) that are determined by extending the segments (VWPO) of the connection paths over the undecomposed phase shifters (PO) parallel to the undecomposed phase shifters (PO) to the left and to the right by a predetermined length, called the trim width; and regions (TBG) composed from undecomposed phase shifters (PO), critical structures (KR), uncritical structures (UKR) minus the trim structures (TS).
In addition, the multiply coherent region outside the phase shifters and additional structures is designated the background, whereby it is not distinguished whether these structures are photolithographically critical or uncritical. In bright-field technology, this background is bright, and in dark-field technology it is dark.
The two exposure masks, i.e., the phase mask (M1) for the first exposure step and the trim mask (M2), are automatically determined, according to the method presented above, as follows:
In dark-field phase mask technology, phase mask (M1) is made up of a two-colored set of artificially decomposed phase shifters (PZ) and the associated dark background. Trim mask (M2) for the subsequent exposure of artificially produced dark regions on the photoresist consists of a two-colored set of trim structures (TS), regions transparent to light in the uncritical structures (UKR.), and the associated dark background.
In bright-field phase mask technology, phase mask (M1) is made up of a two-colored set of artificially decomposed phase shifters (PZ) and the associated bright background. Trim mask (M2), for the subsequent exposure of artificially produced dark regions on the photoresist, consists of a two-colored set of trim structures (TS), dark composed regions (TBG) representing the undecomposed phase shifters (PO), the critical structures (KR), and the uncritical structures (UKR) minus the trim structures (TS), and the associated bright background, having a 90xc2x0 phase difference from the trim structures (TS)
Trim structures are thereby always colored such that two trim structures on a segment (VWKR) of the connection path over the critical structures (KR) receive opposed phases. All other trim structures can be exposed with an arbitrary phase. This holds also for regions transparent to light on the uncritical structures (UKR). However, a matching to one of the phases in the colored trim structure region is preferably carried out. If this trim structure region has for example a 90xc2x0/270xc2x0 coloring, then 90xc2x0 or 270xc2x0 phase is selected for the remaining trim structures and regions transparent to light at uncritical structures. In addition, in trim structure coloration in bright-field phase mask technology, a 90xc2x0 phase difference to the bright background is maintained, because given a 90xc2x0 phase difference the light intensity lies above the threshold of sensitivity of the photoresist, so that unexposed regions do not occur on the edge of composed regions (TBG). If, for example, 90xc2x0/270xc2x0 coloration is used for the trim structures, a 180xc2x0 phase is assigned to the bright background.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a method for determining and removing phase conflicts on alternating phase masks, and mask configuration for use with such a method, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.

Method for determining and removing phase conflicts on alternating phase masks


A thermal processing apparatus (20) includes a spiral conveyor system (22) configured into an ascending spiral stack (26). An inner mezzanine (40) is disposed within the circular interior of the stack (26) and an exterior mezzanine (42) encircles the spiral stack. The mezzanines divide the processing chamber (32) into a plurality of processing zones. A sealing system (90) seals the interior mezzanine (40) relative to the spiral stack (26). A sealing system (130) seals the outer mezzanine (42) relative to the exterior of the spiral stack, and a seal system (132) seals the outer mezzanine relative to the walls (56, 58) of the housing, thereby to limit the leakage of the processing fluid between the mezzanines and the spiral stack (26) and housing walls so that as much as the thermal processing medium is possible is forced through the spiral stack for processing work products carried on the conveyor system (22).

Spiral conveyor based thermal processing systems include a cooking surface or a cooling/freezing surface in the form of a pervious self-stacking conveyor belt for conveying workpieces, including food, through a thermal processing chamber in a spiral or helical path. The self-stacking belt is arranged in and travels in circular tiers from the bottom of the spiral stack to the top and then perhaps in a second stack the belt travels from the top back down to the bottom of the stack. The bottom belt tier rests on and is driven by inner and outer drive chains, which in turn are supported on roller chains or ball chains that ride on support rails.
If the workpiece is being cooked or otherwise heated, a heat source, such as steam, air, or mixtures thereof, is provided within or adjacent the cooking chamber for cooking the workpieces. Correspondingly, if thermal processing is in the form of cooling or freezing, then a source of cooling medium is provided either within the cooling/freezing chamber or adjacent thereto.
An advantage of thermal processing systems utilizing spiral conveyor belts is that a relatively long processing path can be achieved with a small footprint. For example, a 600-foot long thermal processing conveyor belt in a spiral configuration can be contained within a 20 foot×20 foot×20 foot housing. However, spiral stack conveyor thermal processing systems do have drawbacks from a linear oven of a comparable length. In a linear oven, the upper and lower surfaces of the products are exposed to being efficiently impinged upon by the thermal processing medium. However, in a spiral oven, the workpiece is not as directly accessible to the thermal processing medium since the work products are arranged in stacked layers, thus requiring less direct thermal processing methods than direct impingement of the thermal processing medium onto the food product.
In one form of spiral stack conveyors, a fan system is used to direct the flow of the thermal processing medium vertically through the annulus of the spiral conveyor, either in the upward or downward direction, as well as to some extent horizontally across the layers of the spiral stack. One difficulty in this type of thermal processing medium flow arrangement is to achieve uniform thermal processing across the conveyor since typically the food product is arranged in multiple lanes with variable spacing along the conveyor. When the conveyor belt is in straight configuration, the food products can be fairly uniformly spaced across and along the conveyor. However, when the conveyor curves into a spiral, the food products on the inside of the conveyor become relatively closer together, whereas the food products on the outside of the conveyor become relatively further apart. As such, the food products on the inside of the conveyor tend to receive less thermal processing medium per food product relative to the food products located on the outside of the conveyor. As such, attempts have been made to direct at least some of the thermal processing medium across the levels or flights or tiers of the conveyor, typically from the outside toward the center of the spiral.
Other techniques that have been employed in an effort to more uniformly thermally treat food products in a spiral stack conveyor include reversing the direction of flow of the thermal treatment medium while the food product is moving along the spiral conveyor. For example, during part of the processing cycle, the thermal processing medium may be directed upwardly through the annulus of the spiral, and then later in the thermal process, the direction of flow of the processing medium may be reversed to flow from the top of the conveyor stack down.
Another effort in achieving more uniform thermal processing is to employ baffles or mezzanines around and/or within the center of the spiral conveyor to control the direction of the thermal processing medium flow through the spiral stack. In this regard, one or more inner mezzanines have been positioned with the center of the spiral stack to essentially divide the spiral stack into different thermal processing zones. For example, a first thermal processing zone may be at a higher pressure, and a second thermal processing zone may be at a lower pressure. The heat transfer between the thermal processing medium and the workpiece primarily occurs either by condensation heat transfer or convection heat transfer. An outer mezzanine may also be positioned around the spiral stack and extending to the inner walls of the thermal processing chamber.
For optimum performance of the thermal processing system, it is important that as much of the thermal processing medium is forced through the spiral stack where the food products are located, and as little processing medium as possible bypasses the spiral stack. To this end, various types of seals have been employed between the inner mezzanine and the inside of the spiral stack as well as between the outer mezzanine and the exterior of the spiral and between the outer mezzanine and the inner walls of the thermal processing chamber.
However, it is not possible for the mezzanine floors to fit tightly against the spiral stack or the enclosure wall for several reasons, including that the spiral stack(s), as well as the thermal processing chamber structure, thermally expand and contract differently from each other. Also, the chamber may bulge depending on air pressure difference between the interior of the chamber and the ambient. In addition, the spiral stack may vary in diameter depending on the operating conditions, for example, the temperature and pressure within the thermal processing chamber, the level of load being carried by the conveyor, and the level of wear of the conveyor belt. Further, the spiral stack rotates and may not be perfectly round, thus the exterior and/or interior perimeter of the spiral stack do not travel in a perfect circle. In addition, the fans used to circulate the thermal medium within the thermal processing chamber may cause vibrations that are transferred to the mezzanine floor structures.
Heretofore strips of flexible material have been used in an effort to seal the gap between the mezzanine floor and the interior and exterior of the spiral stack, as well as the sealed gap between the mezzanine floor and the inner wall of the thermal processing chamber. In one effort in this regard, flexible strips have been fastened to the mezzanine floor by popper rivets so that the strips project laterally from the mezzanine floor to bear against or closely adjacent the spiral stack or the processing chamber interior walls. This solution has not been optimal from a hygiene perspective due to, for example, the popper rivets and the overlapping surfaces of the flexible seal strips forming pockets which accumulate dirt and debris, and which are hard to clean.
The present disclosure seeks to address the shortcomings of existing mezzanine floor seals to provide effective and more hygienic seals between the mezzanine floors and the spiral conveyor and between the mezzanine floors the thermal processing chamber structure.


It is an aspect of the present disclosure to provide an image processing apparatus, a display apparatus and a method of controlling of the display apparatus capable of preventing a rapid decrease in the image quality of image data.

1. Field
The present disclosure relates generally to an image processing apparatus performing an image processing process, a display apparatus and a method of controlling of the display apparatus.
2. Description of Related Art
A display apparatus refers to an apparatus capable of visually displaying image data in various formats by having a display panel.
The display apparatus may process the image data that is transmitted from various external image sources or stored therein and then display the image data on the display panel. For example, the display apparatus performs a variety of image processing processes, e.g., decoding and scaling, on broadcast signals received from the outside so as to display an image in a broadcast channel desired by a user, on the display apparatus.
Recently, a display apparatus may provide an image having the immersion to a user by improving image quality of the image data that is transmitted from various external image sources or stored therein.

Image processing apparatus, display apparatus and method of controlling thereof

Abstract: In accordance with an example aspect of the present disclosure, a display apparatus comprises: a plurality of image processing modules, each image processing module configured to perform an image processing process; a controller configured to output image data processed by any one image processing module of the plurality of image processing modules, based on state information of the plurality of image processing modules; and a display configured to display the output image data.


The invention relates to a cream cheese product obtainable by a process comprising the steps of: (a) acidifying a whey protein concentrate with a food grade acidulant or with starter bacteria to reduce the pH to more than 4.5 to about 5.2, (b) heating the acidified whey protein concentrate of step (a) slowly to a temperature of about 75° to about 90° C. and maintaining it for at least about 30 min to produce a 1.5 functional whey protein concentrate, (c) optionally blending the whey protein concentrate of step (b) with milk fat in a weight ratio of about 60:40 to about 100:0 wherein step (c) may be carried out before step (b), (d) homogenizing the blend obtained in step (b) or (c) in a 2-stage high-pressure homogenizer at pressures of about 300-400/50-80 bar and a temperature of about 5° to about 75° C. to produce an emulsified functional whey protein concentrate, (e) blending the product of step (d) with curd the fat content of which is adjusted in accordance with the milk fat portion added in step (c) and with the desired product, and adding salt and optional stabilizers, and (f) homogenizing the product of step (e) in a 2-stage high pressure homogenizer at pressures of about 300-400/508-80 bar and at a temperature of about 68° to about 90° C.

Whey (acid, sweet or mixtures thereof) is obtained as a by-product from the production of cheese or casein. Whey contains valuable proteins and there have been many attempts to incorporate whey proteins into cheese products. However, whey proteins in their natural form do not have the appropriate and desired physical and chemical properties required for good or high quality cheese products.
A promising approach was the use of functionally enhanced whey proteins for making cheese, including cream cheese. EP-A-1,020,120 describes processes for making a stable cheese product supplemented with functionally enhanced whey proteins. Whey proteins are functionally enhanced by exposing cheese curds or dairy liquids containing whey proteins to controlled heat treatment and/or treatment at high shear rates. However, the processes are limited with respect to achieving low casein:whey proteins ratios, low dry matter contents and high lactose contents, and the texture and mouthfeel of the products are not completely satisfactory.
Further relevant prior art is described in EP-A-1,249,176. It discloses a process for the incorporation of whey proteins into foodstuffs by acidifying an aqueous solution of one or more whey proteins below their isoelectric pH, i.e. 4.5 to 2.5, preferably 4.0 to 3.5, optionally forming a whey protein-stabilized fatty emulsion by blending and homogenizing said acidified solution of whey proteins with one or more fats, heat-treating said acidified solution or whey protein-stabilized fatty emulsion, and blending same with a foodstuff base to form a foodstuff. The two examples relate to the production of processed cheese. Testing out the described process for making cream cheese showed that the taste of obtained cream cheese was too acidic and the addition of neutralizing agents such as NaOH resulted in a cream cheese which had an unacceptable texture.
The object of the present invention is to provide a cream cheese product which has in combination a low casein:whey protein ratio, a low dry matter content, a high lactose content and an enhanced creamy texture and mouthfeel and is reduced syneresis.

Cream cheese product and its method of preparation


A wrappable textile tubular sleeve for routing and protecting elongate members is provided. The sleeve includes an elongate wall constructed from interlaced yarns. The wall has opposite inner and outer edges extending between opposite ends of the sleeve parallel to a central longitudinal axis of the sleeve. The wall also has oppositely facing inner and outer faces extending between the inner and outer edges. The inner face bounds an inner cavity of the tubular sleeve upon wrapping the outer edge in outwardly overlapping relation with the inner edge about the central longitudinal axis. Further, an elongate fastener extends parallel to the central longitudinal axis adjacent the outer edge. The fastener faces outwardly from the outer face and is configured for attachment to an external support member.

1. Technical Field
This invention relates generally to textile sleeves for protecting elongate members, and more particularly to a wrappable textile sleeve having an integral attachment device for attachment to a support surface and closure device for maintaining the sleeve in a wrapped configuration about the elongate member.
2. Related Art
It is known to wrap wires and wire harnesses in wrappable protective textile sleeves to provide protection to the wires against abrasion, fluid, thermal and electromagnetic interference effects. The textile sleeves are typically woven, braided, knitted, or crocheted, and then cut to a desired length, whether in manufacture or in the field. Further, the open construction, wrappable sleeves are known to be constructed at least in part from a heat-settable yarn, thereby allowing the wall of the sleeve to be heat-set into a self-wrapping, also referred to as a self-curling, configuration wherein opposite lengthwise extending edges of the sleeve overlap one another to completely enclose the elongate members being protected. Further yet, to ensure the wall of the sleeve remains properly wrapped about the elongate members, it is known to use closure devices, e.g. snaps, hook and loop fasteners, adhesive tape, and lacing tape, to keep the longitudinally extending free edges of the sleeve in overlapped relation with one another. Lacing tape, also referred to as 'string', is commonly used in aerospace applications wherein the lacing tape is generally provided on a bobbin and cut with scissors to provide the length necessary to close the sleeve within the technical specifications. The string is typically wrapped about the circumference of the wrapped sleeve wall whereupon free ends of the string are tied to form a knot, thereby maintaining the wall in its closed configuration. Although the string is effective to perform its intended function, it requires carrying inventory of separate string components, given it is supplied as a separate component from the sleeve. Further, the separate string component requires manual manipulation, including possible cutting to length and measurement to ensure the string is properly spaced along the length of the sleeve during application.
In addition, the wrappable sleeves, upon being wrapped about the elongate members, often need to be attached to a support member of the particular application to prevent the sleeve from moving relative to the support member. For example, the support member could be a frame member of an automotive vehicle or aircraft. In non-aircraft applications, the frame can often be constructed with fastener holes to facilitate attaching the sleeve to the frame via separate clips, for example. However, in the manufacture of frame structure for aircraft applications, holes are typically unwelcome, thereby making attaching the sleeve to the frame more challenging.

Wrappable textile sleeve with integral attachment and closure device


A pinball machine defines a play field to receive a rolling ball for pinball play. By this invention, a ball-aperture carries a first ball, a second ball rolling on the play field toward the aperture is prevented from entering the aperture and is deflected away from the aperture in a first direction by collision with the first ball in the aperture. Means are provided for displacing balls from the aperture and causing them to roll on the play field in a direction other than the first direction. Thus, by the improvement of this invention, balls directed at the aperture are sent away therefrom in two different directions, for different play patterns on the play field.

Pinball machines are popular play devices for places where particularly young people congregate, comprising and inclined play field, plus several targets and other play features arranged on the play field. A rolling ball is used to strike the targets, and a score is usually kept by electronic means and displayed in a prominent manner.
There is a continuing need for variable, new features, to increase the variety of the play action to hold the interest of the users.
By this invention, an increase in the variability of the play action can be provided, making use of a relatively simple structure to provide a pinball game that retains the interest of the users at a relatively low cost.

Multi-level playing surface pinball machine apparatus


The invention relates to a military safety helmet with a cap resistant to bombardment and an internal band arrangement, connected firmly to the helmet cap at several points and comprised of an approximately horizontally encircling annular supporting band, a plurality of bands extending in a radiating manner from a central fastening piece on the top side of the helmet and bands for connecting the adjacent radiating bands. The internal band arrangement provides all-round impact damping, especially under the effect of shocks, and good ventilation since the bands have formed-on bosses pointing towards the inner face of the helmet cap. Above the supporting band, fastening strips extend which have no bosses and the ends of which are connected firmly to the helmet cap in such a way that the band arrangement rests against the inner face of the helmet cap via the bosses. The radiating bands are approximately the width of the bosses, and the bosses are preferably designed as hollow cylinders.

The invention relates to a military safety helmet with a helmet cap resistant to bombardments and with a band arrangement, as internal equipment, connected firmly to the helmet cap at several points and composed of an approximately horizontally encircling annular supporting band and of bands which extend in a radiating manner from the top side and the ends of which are connected firmly to the supporting band.
In military safety helmets, a known band arrangement is composed of textile bands which are connected to the helmet cap, preferably by riveting, at several, for example, at six, points in the region of the annular supporting band. The purpose of the band arrangement is to keep the skull away from the cap, in order, under the effect of an impact, to avoid transmitting the impact energy directly through the cap to the skull of the helmet wearer. It is possible for the skull to come in contact with the top of the helmet cap only when the textile bands have lengthened to a considerable extent, thereby expending some of the impact energy. Since the band arrangement is fastened directly to the helmet laterally, lateral impacts can be transmitted directly to the skull of the helmet wearer. Since bombardments of the helmet cap are possible and likely from all sides equally, band arrangements of this type are unsuitable for damping the bombardment energy of a wide variety of possible bombardments before it is transmitted to the skull of the helmet wearer.
There are known work safety helmets, the internal equipment of which must satisfy requirements fundamentally different from those in military safety helmets. For this internal equipment, it is known to produce the band arrangement from plastic and, for damping violent impacts on the helmet, to provide, on the outside of the plastic bands, bosses which experience plastic deformation under high impact effect and which thus transmit the impact energy to the skull of the helmet wearer only after it has been damped. It is not possible for bosses to be provided where the radiating bands are fastened to the helmet cap itself. As these points, therefore, impact energies are transmitted to the skull without being damped. The functioning of the internal equipment of work safety helmets of this type is based essentially on the fact that the radiating bands are fastened to the helmet cap and the supporting ring remains movable. In DE-U No. 76 23 197 there is an additional band which makes the connection between the radiating bands and the supporting ring and which is itself not fastened to the helmet cap. This band is located on the rear side of the helmet. The supporting ring is itself connected firmly to the helmet cap on the front side of the helmet. Padding is provided at this location.
Internal equipment known from the work safety helmets cannot be transferred directly to military safety helmets. All-round impact damping could be achieved by means of an inserted Styropor cap in the manner of a motorcycle crash helmet. This design cannot be adopted, however, because it does not allow a sufficient ventilation of the helmet interior. The interior ventilation of crash helmets is based on the capture of the relative wind; therefore, this possibility is not available on military safety helmets.
G.B. Patent No. 1,108,502 discloses an internal equipment for a work safety helmet, which is composed of elastically flexible strips fitted with rectangular ribs close to one another. Two Y-shaped strips extend from an encircling headband in a curve matching the form of the cap to two fastening points located opposite one another. A high density of the shock absorbing ribs cannot be achieved thereby, because the bands are relatively wide and a larger number of bands would result in an excessively high weight of the internal equipment. This internal equipment is not intended for military safety helmets.


The present invention relates to a positive photosensitive resin precursor composition which exhibits good storage stability after exposure.

1. Field of the Invention
The present invention relates to a positive photosensitive resin precursor composition suitably used for a surface protection layer and an insulating interlayer of a semiconductor element, an insulating layer of an organic electroluminescent device, and the like, and which becomes soluble in alkaline developers by being exposed to UV light.
2. Description of the Related Art
Known positive heat-resistant resin precursor compositions, whose exposed area is dissolved by development, may contain a polyamic acid and a quinone diazide; a soluble polyimide having a hydroxy group and a quinone diazide; or a polyamide having a hydroxy group and a quinone diazide.
Unfortunately, a typical positive heat-resistant resin precursor composition containing polyamic acid and quinone diazide hardly provides desired patterns because the carboxyl group of the polyamic acid has a solubility higher than the dissolution inhibition of the quinone diazide, in alkali. Although the positive heat-resistant resin precursor composition containing soluble polyimide whose principal chain has a hydroxy group reduces such a problem, the structure is disadvantageously limited to ensure solubility, and consequently the resulting polyimide resin is less solvent-resistant. The composition containing polyamide having a hydroxy group and quinone diazide is also limited in structure to ensure solubility. Consequently, the resulting resin, which is obtained by heat treatment, is undesirably less solvent-resistant.
In order to control the alkali solubility of the polyamic acid, a polyamic acid derivative has been developed whose carboxyl group is protected with an ester group. Compositions containing the polyamic acid derivative and naphthoquinone diazide extremely increase the dissolution inhibition of the naphthoquinone diazide in alkali. Consequently, while the compositions can provide desired patterns, the photosensitivity is largely degraded in most cases.
Some compositions providing an increased photosensitivity have recently been disclosed. For example, Japanese Unexamined Patent Application Publication No. 2002-328472 teaches a composition containing a polyamic ester and/or a polyamic polymer and a thermally cross-likable compound having a phenolic hydroxy group; Japanese Unexamined Patent Application Publication No. 2001-42527 and U.S. Pat. No. 6,329,110, a composition containing a polyamic ester and an iodonium salt as a dissolution inhibitor; Japanese Unexamined Patent Application Publication No. 2002-169283, a composition containing a polyamide and a iodonium salt as the dissolution inhibitor; Japanese Unexamined Patent Application Publication No. 2002-122993, a composition containing a polyamic ester, a photo acid generator, and a compound having a vinyloxy group; and U.S. Pat. No. 6,600,006, a composition containing a polyamic ester having an acid degradable group and a photo acid generator. These compositions provide desired photosensitivity as long as they are developed immediately after exposure. However, if the compositions are allowed to stand for a time interval of several hours to several days between exposure and development, the photosensitivity is extremely degraded.
In use of the heat-resistant resin precursor composition for semiconductor devices, the resulting cured resin by heating remains in the device as a permanent coating. Accordingly, the adhesion between the cured coating and the substrate is very important. However, the composition does not provide an adequate adhesion to the substrate, and accordingly it is unsuitable for practical use.
Hence, the above-described known compositions for enhancing the photosensitivity result in a degraded photosensitivity if they are allowed to stand for a time interval of several hours to several days between exposure and development, or do not ensure adequate adhesion to the substrate if they are applied to semiconductor devices, disadvantageously.

Photosensitive resin precursor composition

Abstract: A photosensitive resin precursor composition comprises (a) a polymer essentially composed of a structural unit expressed by formula (1); (b) at least two photo acid generators; and (c) a compound having an alkoxymethyl group:

Abstract: wherein R1 represents an organic group with a valence of 2 to 8, having at least two carbon atoms; R2 represents an organic group with a valence of 2 to 6, having at least two carbon atoms; R3 represents hydrogen or an organic group having a carbon number in the range of 1 to 20; n represents a number ranging from 10 to 100,000; m represents an integer in the range of 0 to 2; and p and q represent integers in the range of 0 to 4 and satisfy p+q>0.


A method of manufacturing a tablet containing coated granules comprising compressing the coated granules containing biologically active substance and having a temperature exceeding a room temperature, whereby the tablet can be prevented from rupture of a part of a coating film of the granules at the time of tablet compression.

With increase in an aging population and change in the life environment, it is desired to develop an oral disintegrating-type solid preparation which can be easily taken, and can be handily and arbitrarily taken at any time anywhere without water, while maintaining convenient handling characteristics of tablets.
On the other hand, when a physiologically active substance is a substance exhibiting bitterness, from a viewpoint of drug taking observance, desirably, bitterness is masked by coating this substance. In addition, when a physiologically active substance is a substance liable to be degraded with an acid, it is necessary to coat the substance to prevent degradation by gastric acid and sufficiently deliver the substance to intestines. For these subjects, usually, coating tablets and capsules are used.
Although both are inconsistent requirements, as preparations which satisfy these requirements simultaneously, tablets comprising coated fine particles have been developed heretofore in the prior art. For example, JP 6-502194 A (U.S. Pat. No. 5,464,632) discloses a rapidly disintegrating multi-particle tablet characterized in that an effective substance is present in the form of coated fine particles and the like. Further, JP 2000-281564 A discloses an oral disintegrating tablet comprising coated fine particles in the tablet.
However, in the manufacture of a tablet comprising coated granules, there is a problem that, sometimes, a part of a coating film of the granules is ruptured during table compression, and there are problems that this decreases the aforementioned effect of masking bitterness, and reduces the acid resistance.


The present disclosure presents methods, systems, and devices for encrypting and comparing genomic data. The comparison of genomic data allows the owner of the data to ensure security of the data even when the party conducting the comparison is beyond the control of the owner of the data. The encryption of the genomic data enables the transmission, storage, and use of the genomic data in a secure media.

Genomic data has become increasingly easy and cost effective to produce and genomic data is accumulating with considerable velocity. At the same time, the medical, social and personal utility of genomic information is expanding, revealing new and potentially transformative applications of genomic technology. Simultaneously, genomic data is inherently sensitive—potentially allowing third parties to learn about health risks, family history and important personal attributes (e.g., probable hair color, eye color, and other phenotypic information) of individuals whose genomic data becomes compromised. Moreover, genomic data is inherently personally identifiable, posing the risk that third parties will be able to learn the identity of individuals whose genomic data is compromised (and by extension, important information about the identity of family members and their genetically encoded traits). This personal security vulnerability may enable curious data interceptors to obtain information about the intercepted individual and her family, including for instance, family medical risk predisposition, probable lifespan or potential response to medical therapy. An individual may go to a lab and have specimen taken for the purpose of producing genomic data. This genomic data can be stored and transmitted to others by health care providers, healthcare institutions, third party entities or the individual. Furthermore, users can decide to share or compare genomic data for a variety of medical and non-medical reasons and this is increasingly probable as the power of genomic data to produce meaningful insights into phenotypic features, probable drug safety and efficacy responses or a variety of other genomic correlates grows.

This patent is subject to a terminal disclaimer.

Device, system and method for securing and comparing genomic data


A collaborative work tool configured to determine similarity between an input provided by a user and content already received by the collaborative work tool. If a similarity is determined, the collaborative work tool can provide a visual indication to the user to alert the user that the user may be entering redundant data.

An organization can leverage a collaboration tool that is accessible by many individuals to facilitate completion of work related to a goal. Many conventional collaboration tools and interfaces include knowledge-sharing features—such as comment sections, forums, knowledge stores, and the like—that can be reviewed by a user of the collaboration tool to determine whether a problem encountered by that user has been previously solved or otherwise addressed by another user.
In many cases, however, processes of reviewing and understanding content stored in various knowledge-sharing features of a collaboration tool may be time and resource consuming for some users. As a result, many users of conventional collaboration tools and systems prefer to avoid leveraging knowledge-sharing features and, instead, prefer to add content to a knowledge-sharing feature that may be duplicative of, and/or redundant to, content already added to the knowledge-sharing feature.

Autonomous redundancy mitigation in knowledge-sharing features of a collaborative work tool


The present invention discloses a data transmission method and apparatus. The method comprises: obtaining information of a vehicle, the information comprising a current location of the vehicle; predicting a possible location of the vehicle in a future period of time and corresponding communication connection quality; predicting changes of the communication connection quality in the vehicle running course according to the communication connection quality at the current location of the vehicle and the communication connection quality at the predicted location; and according to the changes, determining an adjustment policy of computing resources for processing data uploaded by the vehicle. By means of the method and apparatus of the embodiments of the present invention, computing resources for processing real-time data uploaded by vehicles can be determined dynamically.

In scenarios related to Internet of Vehicles systems, a vehicle periodically sends real-time data to a server by a vehicle-mounted terminal device. However, since the vehicle often travels through areas with bad signal quality, such as areas where the signal quality gets worse due to congestion or tunnels, mountains and other areas where the signal quality is already bad, phenomena such as re-transmission and disorder occur in data sent by the vehicle-mounted terminal device.
In order to completely receive data from the vehicle-mounted terminal for subsequent processing, the server usually has to preserve fixed computing resources for each vehicle in the light of the worst signal quality, such as a fixed data buffer, fixed data compression mode, fixed data submitting frequency, etc. For example, regarding a fixed buffer setting, since some systems take the worst situation into consideration while setting buffers, fixed buffers need to be allocated for each vehicle as many as possible in order to cope with possible re-transmission or re-ordering. However, since the worst situation has a low probability of occurrence, the existing fixed resource allocation mode is inefficient and resource-consuming. In an IOV system with a large amount of online vehicles, such fixed resources will become larger, which means a great burden on the server.

Data transmission for an internet of vehicles system

International Business Machines Corporation


A method for fabricating an integrated circuit includes forming a temporary gate structure on a semiconductor substrate. The temporary gate structure includes a temporary gate material disposed between two spacer structures. The method further includes forming a first directional silicon nitride liner overlying the temporary gate structure and the semiconductor substrate, etching the first directional silicon nitride liner overlying the temporary gate structure and the temporary gate material to form a trench between the spacer structures, while leaving the directional silicon nitride liner overlying the semiconductor substrate in place, and forming a replacement metal gate structure in the trench. An integrated circuit includes a replacement metal gate structure overlying a semiconductor substrate, a silicide region overlying the semiconductor substrate and positioned adjacent the replacement gate structure; a directional silicon nitride liner overlying a portion of the replacement gate structure; and a contact plug in electrical communication with the silicide region.

The integration of hundreds of millions of circuit elements, such as transistors, on a single integrated circuit necessitates further dramatic scaling down or micro-miniaturization of the physical dimensions of circuit elements, including interconnection structures. Micro-miniaturization has engendered a dramatic increase in transistor engineering complexity, such as the inclusion of lightly doped drain structures, multiple implants for source/drain regions, silicidation of gates and source/drains, and multiple sidewall spacers, for example.
The drive for high performance requires high speed operation of microelectronic components requiring high drive currents in addition to low leakage, i.e., low off-state current, to reduce power consumption. Typically, the structural and doping parameters tending to provide a desired increase in drive current adversely impact leakage current.
Metal gate electrodes have evolved for improving the drive current by reducing polysilicon depletion. However, simply replacing polysilicon gate electrodes with metal gate electrodes may engender issues in forming the metal gate electrode prior to high temperature annealing to activate the source/drain implants, as at a temperature in excess of 900° C. Such fabrication techniques may degrade the metal gate electrode or cause interaction with the gate dielectric, thereby adversely impacting transistor performance.
Replacement gate techniques have been developed to address problems attendant upon substituting metal gate electrodes for polysilicon gate electrodes. For example, a polysilicon gate is used during initial processing until high temperature annealing to activate source/drain implants has been implemented. Subsequently, the polysilicon is removed and replaced with a metal gate.
Additional issues arise with lateral scaling, such as the formation of contacts. For example, once the contacted gate pitch gets to about 70 nanometers (nm) or below, there is not enough room to land a contact between the gate lines and still maintain reliable electrical isolation properties between the gate line and the contact. Various self-aligned contact (SAC) methodologies have been developed to address this problem. To realize a SAC compatible with replacement gate techniques, two nitride liners are required to be present in the gate structure for the purpose of blocking ionic diffusion from an interlayer dielectric (ILD) oxide material layer, which is typically present adjacent to the gates, during chemical mechanical planarization (CMP) steps, which are often used during the replacement gate forming process. Conformal atomic layer deposition (ALD) methods are currently used to deposit these nitride liners. However, ALD reduces the space available for SAC opening between gates. As such, these current methodologies do not provide enough space between gates to allow for SAC formation therebetween.
A need therefore exists for an improved methodology enabling the fabrication of semiconductor devices including integrating both metal replacement gates and self-aligned contacts for small-scale architectures. Further, there exists a need for an improved methodology enabling the fabrication of semiconductor devices that provide more space for contacts in devices with a small gate pitch. Still further, other desirable features and characteristics of the present invention will become apparent from the subsequent detailed description of the invention and the appended claims, taken in conjunction with the accompanying drawings, the brief summary, and this background of the invention.

Integrated circuit having a replacement gate structure and method for fabricating the same


Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does.

1. Field of the Invention
The present invention relates to a semiconductor device, and particularly relates to a semiconductor device which achieves reduction of both a reverse recovery time and a forward voltage.
2. Description of the Related Art
A fast recovery diode (FRD, hereinafter referred to as a Si-FRD) using a silicon semiconductor substrate is known as a pn junction diode with improved switching time. This technology is described for instance in Japanese Patent Application Publication No. Hei 10-335679 (page 20, FIG. 39).
Meanwhile, a Schottky barrier diode (SBD, hereinafter referred to as a Si-SBD) using a silicon semiconductor substrate is known to have a short reverse recovery time which is a characteristic of the device itself.
Moreover, an SBD using a silicon carbide substrate (hereinafter referred to as a SiC-SBD) is in the process of marketing as a next-generation device.
FIG. 6 is a diagram showing characteristics of a forward voltage VF and a reverse recovery time trr in a case of IF=10 A in a Si-FRD and a SiC-SBD.
The reverse recovery time trr needs to be reduced in the Si-FRD. The reverse recovery time is a time required until an amount of charge Qrr accumulated in the device is emitted at the time of turn-off when a forward bias is turned into a reverse bias. However, reducing the reverse recovery time trr causes a problem of increasing the forward voltage VF (see a dotted line (trade-off line) in FIG. 6).
To be more precise, the characteristics of the forward voltage VF and the reverse recovery time trr (hereinafter referred to as VF-trr characteristics) have a trade-off relationship as shown in FIG. 6. In the current situation, either the forward voltage VF characteristic or the reverse recovery time trr characteristic is sacrificed according to the usage. Meanwhile, the Si-SBD has a short reverse recovery time trr, but requires a very high forward voltage VF when being produced as a device having a breakdown voltage of, for example, 600 V. Accordingly, the Si-SBD has the same problem with the Si-FRD.
In contrast, the SiC-SBD has a low forward voltage VF and a short reverse recovery time trr, and thus the VF-trr characteristics can be improved. However, the SiC-SBD as a completed wafer costs 20 times or more than the Si-FRD, and thus is very expensive.

Semiconductor device comprising stack of pn junction diode and schottky barrier diode

Semiconductor Components Industries, LLC


Provided is a paging method and apparatus considering a carrier aggregation (CA) environment in a mobile communication system. A paging method of a user equipment may include: selecting a component carrier (CC) set of the user equipment by selecting a CC for each component carrier element (CCE); receiving, from an evolved Node-B (eNB), a paging message containing a CC set; setting up a connection with the eNB through the CC set of the user equipment when the received CC set is the same as the CC set of the user equipment, or when all the CCs are included in the received CC set; and changing the CC set of the user equipment to the received CC set and setting up the connection with the eNB through the changed CC set when the received CC set is different from the CC set of the user equipment.

1. Field of the Invention
The present invention relates to a paging procedure, and more particularly, to a paging method and apparatus in a carrier aggregation (CA) environment of a mobile communication system.
2. Description of the Related Art
A conventional mobile communication system, for example, a 3rd Generation Partnership Project (3GPP) Long Term Evolution (LTE) system may support a high rate of mobile communication service using a maximum of 20 MHz. However, as a service type, a required data rate, and the like are being diversified, a faster mobile communication system has been desired. For this, an International Mobile Telecommunication (IMT)-Advanced system has supported a relatively wide band, for example, a maximum of 100 MHz compared to conventional 3GPP LTE Release-8. In general, even though a frequency of a mobile communication uses a contiguous spectrum, a support for non-contiguous spectrum has been currently required due to a complexity of a user element and the like. In addition, a reuse of a frequency being used in an existing mobile communication has been required. A band expansion of at least 20 MHz may be performed through a carrier aggregation (CA). A relatively wide frequency bandwidth may be secured through integration of component carriers (CCs). From a view of an LTE user element, each CC may appear as an LTE frequency. Accordingly, it is possible to maintain a compatibility with a previous system.
Since a conventional mobile communication system does not consider a method with respect to the above non-contiguous spectrum, it is difficult to provide an effective communication method using CCs of the non-contiguous spectrum newly required. In the case of paging for an incoming call setup to a user equipment, a CC that is selected by the user equipment and thereby is in an idle state may be different from a CC for the user equipment that is determined by an evolved Node-B (eNB). In this case, it may be difficult to smoothly perform scheduling of the eNB, or an additional procedure such as a handover to another CC may need to be performed after the call setup. When the eNB may not control a CC of the user equipment, load balancing for effectively using resources between CCs may not be properly performed. Accordingly, a congestion may occur in a particular CC. The additional procedure after the call setup may deteriorate a quality of service (QoS) due to an increase in the ineffective call processing procedure.

Paging method and apparatus considering carrier aggregation environment in mobile communication system

Electronics and Telecommunications Research Institute


Apparatus and method for image coding may group code units corresponding to an image based on a same at least one parameter of each of the code units. Each group of code units which is grouped includes code units of which values of the same at least one parameter are the same. In addition, the code units of each group of code units which is grouped are entropy coded in parallel.

1. Field of the Invention
The present invention relates to a coding apparatus and a coding method, and more particularly, to a coding apparatus and a coding method capable of executing a coding operation at higher speed.
2. Description of the Related Art
JPEG (Joint Photographic Experts Group) 2000, which was standardized in 2000 by ISO/IEC (International Organization for Standardization/International Electrotechnical Commission), is expected to be a technique replacing JPEG in that JPEG 2000 has numerous functions such as a high compression ratio, lossy and lossless compression correspondence, scalability (resolution, image quality, and the like), and error-resistance.
In 2004, JPEG 2000 Part-1 was selected as a standard codec by Digital Cinema Initiative (DCI) of a digital cinema. Accordingly, image photographing, image editing, and image delivery of digital cinema can all be standardized by JPEG 2000.
Conserving an original form of a medical image, a satellite image, or the like is necessary. In recent years, there are numerous single-lens reflex digital cameras capable of storing RAW data or RGB data acquired from an image sensor of CCD (Charge Coupled Device) or CMOS (Complementary Metal Oxide Semiconductor) in a memory card in a non-compression state.
However, when a master image is not compressed, an advantage is obtained in that data loss of an image scarcely occurs. However, there is a disadvantage in that the size of data is considerably increased. Therefore, in future, the necessity for compression and decompression by lossless compression of JPEG 2000 in usages, where image quality is important, other than digital cinema, will increase.
Japanese Patent No. 3906630 discloses an image coding apparatus that includes both a fixed point type wavelet transformer and an integer type wavelet transformer and is capable of executing both reversible transformation and irreversible transformation. Therefore, in this image coding apparatus, a degree of freedom of selecting image quality or compression ratio is improved.
In JPEG 2000, however, a problem may arise in that calculation load is considerably increased in comparison to JPEG. In particular, it may take an enormous amount of time to execute lossless compression since all coefficient data have to be compressed without loss.
In the coding technique of JPEG 2000, a first large calculation load is an entropy coding unit called EBCOT (Embedded Block Coding with Optimized Truncation). The entropy coding unit uses a technique of executing arithmetic coding while modeling binary data developed in a bit plane in one pixel unit. Therefore, since there is "dependency" that the result of a high bit plane influences the result of a low bit plane upon sequentially executing the processes, it is difficult to execute a parallel operation in the code block. For this reason, in a case of coding or lossless compression of an image with a large resolution, whatever the method, processing the calculation load of JPEG 2000, in particular, realization of the high speed EBCOT, is key.
It is desirable to provide a technique capable of executing a coding operation at higher speed.


A method of producing a layered semiconductor device comprises the steps of: (a) providing a base comprising a plurality of semiconductor nano-structures, (b) growing a semiconductor material onto the nano-structures using an epitaxial 5 growth process, and (c) growing a layer of the semiconductor material using an epitaxial growth process.

Wide band-gap GaN and related materials are recognized to be among the most attractive compound semiconductors for use in a variety of devices. They are adapted for optoelectronic and microelectronic devices which operate in a wide spectral range, from visible to ultraviolet and in the high temperature/high power applications area. The main advantages of nitride semiconductors in comparison with other wide-band-gap semiconductors are their low propensity to degrade at high temperature and high power when used for optical and microelectronic devices. Meanwhile, low-dimensional quantum confinement effects (i.e. in quantum wires and dots) are expected to become one of the foremost technologies for improving optical device performances. Fabrication of a variety of low-dimensional structures in III-V nitrides has been undertaken using methods such as etching, re-growth, overgrowth on selected areas, growth on tilted substrates, self-organization process, etc.
Despite the technological advances of the last few years, one of the key obstacles preventing further developments in GaN devices is the lack of high quality and commercially available low-cost, free-standing GaN templates. Alternative substrates, such as sapphire and SiC, are commonly employed in nitride-based devices. As a result of lattice mismatch and large differences in the thermal expansion coefficients between the deposited film and substrate (heteroepitaxy), a very high (109 to 1010 cm−2) density of threading dislocations and serious wafer bending/cracking, induced by undesired residual strain, occurs in the grown nitride layers. These factors can significantly affect the performance and lifetime of nitride-based optoelectronic and microelectronic devices.
Epitaxial lateral overgrowth technique (so-called ELOG and its modifications: facet initiated epitaxial lateral overgrowth (FIELO) and Pendeo (from the Latin to hang or be suspended)) is the most widely used approach employed for suppressing bending and a significant fraction of the threading dislocations in the material. Laterally overgrowing oxide (or metal) stripes deposited on initially-grown GaN films has been shown to achieve about two orders of magnitude reduction in the dislocation density, reducing it to the 107 cm−2 level. However, the low defect-density material only occurs in the wing region, located in the coalescence front, and represents only approximately one fifth of the whole wafer surface area. Large coalescence front tilting and tensile stress are both present in the overgrowth region. Asymmetric stress due to the rectangular masks also results in asymmetric bowing of the wafers.
Low defect-density free-standing GaN is currently one of the materials of choice to achieve the desired specification for optoelectronic and microelectronic devices. The record nitride laser lifetime of 15,000 hours under CW-operation at the 30 mW output level has recently been demonstrated by Nichia Chemicals Inc., using the HVPE-grown substrate. However, the free-standing GaN substrates are very expensive, and the defects density is not as low as the Si, GaAs and InP wafers.
Various vapor deposition methods suitable for growing GaN materials are described in U.S. Pat. Nos. 6,413,627, 5,980,632, 6,673,149, 6,616,757, 4,574,093, 6,657,232 and 2005/0199886. Other publications relating to such methods include:    1. Handbook of Crystal Growth, Vol 3, edited by D. T. J. Hurle, Elsevier Science 1994.    2. R. F. Davis et al, 'Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H—SiC(0001) and Si(111) Substrates.' MRS Internet J. Nitride Semicond. Res. 6, 14, 1 (2001).    M. Yoshiawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, 'Growth of self-organised GaN nanostructures on Al2O3 (0001) by RF-radical source molecular beam epitaxy.' Jpn. J. Appl. Phys., 36, L359 (1997).    4. K. Kusakabe, A. Kikuchi, and K. Kishino, 'Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy.' J. Crystl. Growth., 237-239, 988 (2002).    5. J. Su et al, 'Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition.' Appl. Phys. Lett., 86, 13105 (2005).    6. G. Kipshidze et al, 'Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition.' Appl. Phys. Lett., 86, 33104 (2005).    7. H. M. Kim et al, 'Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy.' Appl. Phys. Lett., 81, 2193 (2002).    8. C. C. Mitchell et al., 'Mass transport in the epitaxial lateral overgrowth of gallium nitride.' J. Cryst. Growth., 222, 144 (2001).    9. K. Hiramatsu., 'Epitaxial lateral overgrowth techniques used in group III nitride epitaxy.' J. Phys: Condens, Matter., 13, 6961 (2001).    10. R. P. Strittmatter, 'Development of micro-electromechnical systems in GaN', PhD Thesis, California Institute of Technology, P. 92 (2003).


The invention relates to an assembly including:                at least one electrical device comprising a first face for being pressed against a surface,        at least one pressing member positioned on a second face of the electrical device opposite to the first face, said pressing member being intended to participate in pressing said electrical device on said surface,        at least one holding part which holds said pressing member on the second face of said electrical device by being attached around the pressing member on a peripheral portion of the electrical device.

In applications of electric or hybrid vehicle, electric voltages can be high, for example between 200V and 800V. Heat generation by Joule effect can then become significant with the risk of damaging pieces of electrical equipment of the vehicle.
In order to avoid any degradation by heat, an electrical equipment generally comprises a cooling system. It is known to use a pressing member for pressing an electrical device of the electrical equipment against a surface of the cooling system to improve cooling of the electrical device. For example, in a power inverter onboard an electric or hybrid vehicle, an electric device, such as a capacitive block, is known. The capacitive block comprises one or more capacitors connected by a positive conductor and a negative conductor. Typically, the capacitive block is secured to a chassis of the power inverter to be pressed against the cooling system of the power inverter. On the face of the capacitive block which is opposite to the cooling system, a pressing member bears on the capacitive block to press it against the cooling system. Generally, the pressing member is first mounted on a first part of the chassis, the capacitive block is mounted on a second part of the chassis which comprises the cooling system. Then, both parts of the chassis are assembled such that the pressing member comes against the capacitive block to press it against the cooling system.
However, there is a misalignment risk between the pressing member and the capacitive block, which may decrease the pressing efficiency of the capacitive block. Guide pins between the pressing member and the first part of the chassis on the one hand, and on the capacitive block and the second part of the chassis on the other hand, and guide pins between the first part of the chassis and the second part of the chassis can be used. But this solution can be complex to make, because the power inverter comprises several other electrical devices, each having its own positioning requirements. All the alignments to be made makes up a requirement in manufacturing the power inverter, and more generally an electrical equipment.
There is thus a need for a means facilitating alignment of the pressing member with the electrical device it presses within an electrical equipment.

Assembly comprising an electrical device, a pressing member and a part for holding the pressing member


A cover assembly for an electronic device has a cover member including a glass ceramic material. An adhesion layer couples an interior coating to the cover member. The adhesion layer includes an oxide-based layer, such as a silicon oxide-based layer, and a coupling agent.

An interior surface of a cover glass for an electronic device may be coated to provide a decorative effect. For example, an opaque coating may be used to block one or more internal components of the electronic device from view. The opaque coating may be selectively applied to the cover glass to allow viewing of a display.

Electronic device with a cover assembly having an adhesion layer


A communication terminal supporting direct dial-in service that can accurately establish polarities of station lines and prevent erroneous operation has a direct dial-in connection function of push-button method, and includes: a polarity determining circuit determining polarities of a pair of station lines; a primary acknowledgement signal transmitting circuit responsive to a reception of a call signal after the polarity determining circuit detected reversal of polarities of the station lines, for transmitting a primary acknowledgement signal to a line; an extension designation signal detecting circuit for detecting, after transmission of the primary acknowledgement signal by the primary acknowledgement signal transmitting circuit, reception of an extension designation signal from an exchange, and a polarity establishing circuit responsive to detection by the extension designation signal detecting circuit of the extension designation signal, for establishing polarities of the pair of station lines determined by the polarity determining circuit.

1. Field of the Invention
The present invention relates to a communication terminal connected to a telephone line network and, more specifically, to a communication terminal adapted to direct dial-in service.
2. Description of the Background Art
In offices and companies, Direct Dial-In (DDI) service is used by installing a PBX (Private Branch eXchange). DDI service refers to a service in which number information necessary for extension exchange is transmitted from an external communication device to a private branch exchange of a company through a telephone line network, to enable direct connection to the extension. This service enables allocation of a unique number to each telephone connected to the private branch exchange, and a telephone having a desired extension number can directly be called, not through a station line switch board.
A facsimile machine having the DDI connection function described above, which transmits a call tone to a telephone upon detection of a DDI number registered beforehand during an incoming call accepting procedure, has been practically used. The facsimile machine is adapted such that a plurality of telephones are connected to the facsimile machine and different telephone numbers are allocated to the facsimile machine itself and to the plurality of telephones.
FIG. 4 shows an operation sequence of DDI connection in accordance with push-button method between a subscriber line exchange and a DDI-supporting terminal, connected by a pair of station lines L1 and L2. Reference numbers (S1) to (S7) in FIG. 4 are reference numbers allocated to respective operations.
Referring to FIG. 4, when a DDI subscriber is to be called, the subscriber line exchange first reverses polarities of station lines L1 and L2. Within 0.1 second after the polarity reversal, the subscriber line exchange transmits a call signal to the DDI-supporting terminal. Depending on whether a primary acknowledgement signal (formation of a DC loop) is received from the DDI-supporting terminal within 6 seconds from the polarity reversal, the subscriber line exchange operates in different manners. If the primary acknowledgement signal is received within this period, about 0.6 seconds after the reception, the subscriber line exchange transmits an extension designation signal (a number of 1 to 4 digits set in advance by a push-button signal) to the DDI-supporting terminal. If the primary acknowledgement signal does not arrive within 6 seconds, the subscriber line exchange starts an operation of disconnecting from the DDI-supporting terminal.
Depending on whether or not an extension designation reception complete signal (cut-off of DC loop) is received from the DDI-supporting terminal in a period of about 0.3 to 2 seconds after the transmission of extension designation signal is complete, the subscriber line exchange operates in different manners. If the signal does not arrive within this period, the subscriber line exchange starts an operation of disconnecting from the DDI-supporting terminal. If the extension designation reception complete signal is received, after about 0.3 seconds from the reception, the subscriber line exchange enters a standby state, waiting for a secondary acknowledgement signal from the DDI-supporting terminal.
Receiving the secondary acknowledgement signal (formation of DC loop), the subscriber line exchange forms a communication path, by returning the polarities of station lines L1 and L2 to the original polarities.
As described above, conventionally, it has been necessary to measure prescribed time periods after occurrence of some events. Therefore, not only the subscriber line exchange but also the DDI-supporting terminal must have a timer. This results in a complicated structure of the DDI-supporting terminal.
Japanese Patent Laying-Open No. 8-204942 (hereinafter referred to as "'942 application") discloses, in facsimile equipment, a technique of preventing meaningless call operations. Specifically, in the facsimile equipment, if there is an on-hook on the caller side while a connection from the caller side is determined to be a telephone call and the user is being called (while the DC loop is cut off and subscriber line exchange is in the standby state waiting for the secondary acknowledgment signal), the on-hook operation is detected. In response to the detected on-hook operation, the facsimile equipment stops the calling operation.
Recently, as one of pre-communication notice services, a modem DDI service has been provided. According to this service, it is possible for the subscriber line exchange to detect the DDI number before receiving a call signal. By the time the call signal is received, the DDI number has already been known to the subscriber exchange and, therefore, it is possible to call a designated telephone or the like directly.
Japanese Patent Laying-Open No. 11-308363 (hereinafter referred to as "'363 application") discloses a technique allowing execution of a desired process without charging the call fee on the call source. Specifically, utilizing the modem DDI service, the subscriber line exchange executes a process in accordance with the DDI number before line connection. As a result, the desired process can be executed without causing any call charge on the calling source.
Referring to FIG. 4, in the operation sequence of the conventional DDI service, when polarities of station lines L1 and L2 are reversed by the subscriber line exchange (S1), the DDI-supporting terminal receives the subsequently transmitted call signal (S2). In response, the DDI-supporting terminal issues the primary acknowledgement signal (forms a DC loop) (S3) and, after a prescribed time period (ta), it detects polarities of station lines and establishes the polarities. Immediately after the formation of DC loop, however, the line voltages of station lines L1 and L2 are unstable. Therefore, conventionally, sometimes the DDI-supporting terminal establishes station lines L1 and L2 in polarities different from the specification. Since the polarities of station lines are not correctly established, there has been a problem that a device on one side of communication erroneously recognizes that the other side of communication has cut off connection during communication after the second acknowledgement and erroneously disconnects the station line of itself.
The techniques disclosed in '942 and '363 applications are on the premise that the operation sequence of DDI connection is correctly performed. Therefore, the above-described problem cannot be solved by these techniques.

Communication terminal adapted to direct dial-in service and method of establishing polarity


A color filter substrate is provided that allows the realization of a liquid crystal display device having excellent display quality and generating no noticeable display unevenness. On a color filter substrate, a lattice-shaped black matrix is formed, and a plurality of colored pixels are formed in matrix. The maximum value of the differences between the overlap widths Wa (or Wb) in the row direction between first colored layers and the black matrix in an area exposed through a photomask, and the overlap widths Wg (or Wh) in the row direction between second colored layers and the black matrix in an area exposed through another photomask, is 4 μm or less. Further, the maximum value of overlap widths Wa to Wl in the row direction between all of the colored pixels and the black matrix is 8 μm or less.

With recent increase in the size of liquid crystal display devices, the size of color filters used in liquid crystal display devices has also increased. In a process of manufacturing color filters, patterning is performed by photolithography to form colored layers. However, there is a problem that the cost of manufacturing color filters is increased due to the very high price of large photomasks. Therefore, various kinds of new exposure methods using small masks have been studied.

Color filter substrate, display device, and exposure method