A modular ornamental luminaire assembly including a luminaire electrical chamber, an ornate cover, and an electrical assembly which is easily affixable or removable from the ornate cover. The luminaire electrical chamber houses an electrical terminal block and an electrical disconnect. The luminaire electrical chamber further includes at least one hollow support arm for supporting the luminaire's optical unit in spatial relation to the electrical components. The hollow support arm maintains and protects the electrical connection between the optical unit and electrical assembly. The electrical assembly is easily affixable to the underside of the cover and easily removable with the cover from the luminaire electrical chamber when the cover is removed from the chamber. The electrical assembly is removed by disconnecting the electrical assembly from the electrical disconnect.

Luminaire assemblies include a housing for enclosing and protecting electrical components required for operation of the luminaire. The optical assembly is generally comprised of a lighting unit and a refractor for producing and directing light of various intensities. These prior art designs often utilize electrical assemblies that are wired directly to the lighting unit through the use of a plurality of wires, splicing means, permanent connecting means, and the like.
Direct wired electrical assemblies have been used to ensure proper electrical contact between system components. Designs have resulted in increased installation and maintenance costs because of the minimal flexibility afforded by the mechanical design. For example, particular system components of traditional luminaire assemblies may require repair, replacement and adjustment. In high pressure sodium systems, for example, starters, ballasts and capacitors require routine maintenance. Similarly, the wattage characteristics, voltage characteristics or both may require adjustment to provide the proper amount of illumination and to conserve energy. These maintenance procedures include the disassembly of sometimes heavy and awkward parts as well as the removal, splicing and reconnection of electrical wires. Because of the direct wired design of previous systems, these maintenance procedures must also be performed on site or, the luminaire must be temporarily disabled while the particular component is repaired in the laboratory or factory.
The optical units of the prior art luminaire assemblies are also known to require routine repair, replacement and maintenance. For example, it is known that refractors and lighting units often must be replaced when the surfaces are penetrated by foreign substances or when they have been fractured as a result of weather conditions or tampering. These time-consuming and labor intensive maintenance procedures must be performed on-site and on a regular basis.
The maintenance procedures referenced above are, of course, further hindered during adverse weather conditions including heavy winds, rain and snow as well as extreme temperature gradients. The maintenance complications inherent in the prior art luminaire assembly designs have resulted in increased labor and maintenance costs which, in turn, have caused purchasers and luminaire designers to turn their attention toward viable design alternatives.
In addition to hindering repair and replacement of components, luminaire assemblies of the prior art suffer from a lack of flexibility in design. These designs make insufficient use of subassemblies, though it is well known that flexibility increases with proper employment of subassemblies. For example, instead of individually mounting small components such as starters, ballasts and capacitors to a lighting unit, it may be possible to instead attach them to a base or platform. This platform would comprise a subassembly which is then mounted to the lighting unit. Modified or new electrical components may then be incorporated into the platform. The platform can be modified to accept the new component inexpensively and quickly without affecting any other part of the luminaire. Creation of the most efficient number and type of subassemblies which allow for flexibility in design is an important object of current designers for ornamental luminaires.
U.S. Pat. Nos. 5,351,174 issued Sep. 27, 1994 to Ewing; 5,243,508 issued Sep. 7, 1993 to Ewing et al. and 3,071,683 issued to Queale; Ewing et al., and Queale, respectively, disclose prior art luminaire designs of the type referenced above. The '174 patent discloses a modular luminaire assembly which includes a top mounted ballast housing and a depending glass refractor or optical unit. The optical unit is removably affixable to the underside of the top mounted housing and an electrical assembly is removably affixable to the upper side of the top mounted housing. However, a cover plate must first be removed to access the electrical components. A hinged cover closes the housing after the electrical assembly is inside the housing.
The '508 patent discloses a modular luminaire assembly for receiving assorted optical assemblies and assorted electrical assemblies in a base housing. A removable panel closes an opening in the base housing and is replaceable along with the electrical assembly supported thereon. The modular design of the '508 patent requires the housing enclosing the electrical subassembly to be directly affixed to the optical assembly and requires the user to replace the cover panel whenever the electrical components are replaced.
The '683 patent discloses a luminaire having a lighting unit, a refractor, and an electrical assembly wherein the luminaire is pivotably affixed to the luminaire housing at one end. The electrical components are directly wired to the lighting unit and thus require maintenance on-site.
What is needed is a modular electrical assembly for an ornamental luminaire which allows for flexibility in design and where the system components may be readily repaired, replaced and adjusted.

Modular electrical assembly for ornamental luminaire


An accessory device mounting platform includes a substantially rigid frame and a substantially rigid mating tray that are slidably interconnected along a first direction, the frame and tray include a tongue-and-groove slide mechanism arranged therebetween for sliding the tray relative to the frame relative to a first direction. A resilient biasing mechanism, such as a cantilevered flexure or tension spring, is coupled between the frame and a latch bolt portion of a clasp mechanism for biasing the latch bolt portion toward a latch strike plate mechanism formed in the tray. The latch strike plate mechanism is formed with an inclined surface that is positioned to engage a latch bolt portion of the clasp mechanism and is structured for deflecting the latch bolt away from the frame, while the resilient biasing mechanism of the clasp mechanism is structured for biasing the latch bolt back toward the frame.

Many after-market accessories being added in automobiles, airplanes and boats require specially designed mounting platforms that can accommodate the limited available space normally found in a vehicle for mounting add-on equipment. The mounting platform itself must be easily and quickly universally adjustable to provide maximum positional flexibility. The mounting platforms must also accommodate the various shapes of accessory devices being installed, while conforming to the limited, generally oddly-shaped space available in which to mount the platform and the accessory device. Furthermore, many of the accessories being added are valuable of themselves, and may through use contain information that is of significantly greater value than the as-purchased device. Lap top computers are such devices that through use accumulate value because the user's entry of data thereinto.
Although various mounting platforms are currently in use of different configurations that mount either on the vehicle's center console or dash board, the currently known mounting platforms permit easy removal of the device without the user's consent. In other words, such currently known mounting platforms permit easy theft of the device. Furthermore, currently known mounting platforms tend to permit the accessory device to slip within the mounting platforms when vibration or shock-induced forces act on the accessory device during motion of the vehicle. Such vibration or shock-induced forces are generally harmful to the device.


A pressure control valve is provided, which can variably control the set pressure of a relief valve in accordance with pilot signal pressure that is controlled in an operator's seat and so on when the set pressure of the relief valve required in a replaced working device is changed.

1. Field of the Invention
The present invention relates to a pressure control valve that can variably control a set pressure of relief valves by pilot signal pressure supplied from an outside.
More particularly, the present invention relates to a pressure control valve that can variably control the set pressure of a relief valve in accordance with pilot signal pressure controlled in an operator's seat and so on when the set pressure of the relief valve required in a working device (e.g. an option device) is changed.
2. Description of the Prior Art
In general, a pressure control valve is used within a set pressure of a hydraulic circuit. In the case of replacing a working device in accordance with working conditions, the set pressure of the relief valve is reset in accordance with the replaced working device.
In the case of controlling the set pressure of the relief valve, it is required for an operator to set the pressure of the relief valve as an operator directly confirms a pressure gauge, and this causes the operator inconvenience. In consideration of such inconvenience in use, a device, which enables an operator to control the set pressure of the relief valve by controlling pilot signal pressure on the outside of a cab or in the operator's seat, has been used.
As illustrated in FIG. 1, a conventional pressure control valve includes a first plug 1 having an inlet port 1a into which high-pressure hydraulic fluid from a hydraulic pump P flows and a tank path 1b communicating with a hydraulic tank T; a poppet 2 slidably coupled within the first plug 1 to open/close a flow path between the inlet port 1a and the tank path 1b; a poppet spring 21 elastically supporting the path between the inlet port 1a and the tank path 1b in a closed state by pressing the poppet 2; a guide 20 supporting the poppet spring 21; a pilot poppet 19 draining the hydraulic fluid in a pressure chamber c of the first plug 1 to the hydraulic tank T by opening a flow path of a valve sheet 3 when high pressure that exceeds a preset pressure is generated in the pressure chamber c; a pilot poppet spring 18 elastically supporting the path of the valve sheet 3 in a closed state by pressing the pilot poppet 19; a piston 17 supporting one end of the pilot poppet spring 18, and slidably moving within a screw plug 11 to control the set pressure of a relief valve when pilot signal pressure is supplied; a spring elastically supporting the piston 17; a sleeve on which a pilot port 7a for supplying the pilot signal pressure to the piston 17 is formed; a fastening nut 10 and a second plug 12 fixed to an outer surface and an inner surface of the screw plug 11, respectively, to prevent a pressure change after the set pressure of the relief valve is set.
Hereinafter, the operation of the conventional pressure control valve will be described with reference to the accompanying drawings.
A) In the case where the set pressure is used (i.e. the pilot signal pressure is not supplied from an outside):
Hydraulic fluid discharged from the hydraulic pump P flows into the pressure chamber c of the first plug through the inlet port 1a and an orifice in the poppet 2 in order. At this time, due to a difference in sectional area between hydraulic pressure parts of the poppet 1, the poppet 2 is pressed in right direction as shown in the drawing to keep the flow path between the inlet port 1a and the tank path 1b in a closed state.
If the pressure of the hydraulic fluid supplied to the pressure chamber c reaches the set pressure of the pilot poppet spring 18, the pilot poppet 19 moves in left direction as shown in the drawing to open the flow path of the valve sheet 3. Accordingly, the hydraulic fluid in the pressure chamber c is returned to the hydraulic tank T through a path 5.
Simultaneously, due to the opening of the pilot poppet 19, the pressure of the hydraulic fluid in the pressure chamber c is instantaneously lowered. Accordingly, the poppet 2 moves in left direction as shown in the drawing, and the hydraulic fluid is supplied from the inlet port la to the hydraulic tank T through the tank path 1b. At this time, the set pressure is determined in accordance with the elastic force of the pilot poppet spring 18 set by the control of the screw plug 11.
B) In the case where the set pressure is changed (i.e. the pilot signal pressure is supplied from an outside):
The pilot signal pressure from an outside is supplied to the piston 17 through a pilot port 7a of the sleeve 7 and a path 11a formed in the screw plug 11, and thus the piston 17 moves in upper left direction as shown in the drawing (in this case, the spring 14 is compressed).
Accordingly, since the elastic force of the pilot poppet spring 18 is reduced, the set pressure value generated in the hydraulic pump P is reduced, and the set pressure of the relief valve is varied.
In the case where a pipe (not illustrated) for supplying the pilot signal pressure from an outside is jointly connected to a single pilot port 7a, it is interfered with components around the relief valve, and thus it is impossible to jointly connect the pipe to the pilot port 7a.
Also, in the case where a drain hole 15 formed in the screw plug 11 is exposed to an outside and a foreign substance or rainwater flows in through the drain hole 15 after an external coating work, the hydraulic driving surface of the spring 14 or the piston 17 is corroded to shorten the life span of the corresponding component.
Also, frictional resistance is generated by O-rings 9 and 16 mounted to seal a gap between mutual contact surfaces of the piston 17 and the screw plug 11, and an O-ring 13 mounted to seal a gap between mutual contact surfaces of the piston 17 and the second plug 12.
Accordingly, as illustrated in FIG. 2, a hysteresis occurs, whereby the set pressure of the relief valve against the pilot signal pressure supplied from an outside cannot be accurately controlled.
Also, the hydraulic fluid fed from the hydraulic pump P and waiting in the pressure chamber c may leak to the hydraulic tank side T due to a difference between the inner diameter of the first plug 1 and the outer diameter of the poppet 2.
At this time, if load is generated on the inlet port side 1a of the first plug 1, a safety accident, such as falling of a working device (e.g. boom or the like), may occur.
In addition, in the case of setting the minimum pressure of the relief valve, the range of the minimum pressure is enlarged due to tolerance of components constituting the relief valve, and thus it becomes impossible to form the pressure desired by the user (e.g., in the case where the minimum pressure of the relief valve is 100 kg/cm2, the actual pressure may be set to 110 kg/cm2.

Volvo Construction Equipment Holding Sweden AB


The present invention provides a resin composition high in melting flow, exhibiting good properties, excellent in moldability and shrinkage properties, and hence suitable for automobile exteriors, by including (A) propylene/ethylene block copolymer having a melt flow rate (MFR) of 100 to 200 g/10 min., its propylene homopolymer component having an MFR of 210 to 400 g/10 min. and isotactic pentad fraction of 0.98 or more, and its copolymer portion containing propylene at 65 to 85% by weight; 50 to 70% by weight, (B) ethylene/octene and/or ethylene/butene random copolymer; 10 to 25% by weight, (C) styrene-based hydrogenated block copolymer rubber; 4 to 9% by weight and (D) talc; 16 to 24% by weight.

This invention relates to a polypropylene-based resin composition comprising a propylene/ethylene block copolymer, ethylene/octene and/or ethylene/butene copolymer, styrene-based hydrogenated block copolymer rubber, and talc, good in injection moldability, flexural modulus of elasticity, resistance to impact and tensile elongation, excellent in internal molding pressure characteristics during the molding process, and suitable for injection-molded articles, e.g., automobile exteriors.
It is widely known that polypropylene-based resin composition, comprising a polypropylene resin incorporated with an ethylene-based thermoplastic elastomer component (e.g., ethylene/propylene or ethylene/butene copolymer) and inorganic filler (e.g., talc), has been going into automobile parts. Various polypropylene resins, rubber components and inorganic fillers have been investigated and proposed, in order to improve moldability, mechanical properties and outer appearances of the polypropylene-based resin compositions.
Automobile parts are demanded to be produced by high-cycle molding and to be thinner articles, and require the materials of higher melting flow and rigidity. Some of the attempts to improve these properties have led to development of the compositions disclosed by Japanese Patent Laid-Open Nos.53843/1995 and 20684/1996. However, materials of still higher melting flow are required for the articles to be produced by high-cycle molding at low pressure, and the above compositions are still insufficient in melting flow to meet the above requirements.
Japanese Patent Laid-Open Nos.324725/1998, 29688/1999 and 43565/1999 also disclose the materials of still higher melting flow, but are silent on internal molding pressure during the molding process. Therefore, they are still insufficient in melting flow for producing large-size molded articles, e.g., bumpers.
Moreover, it is preferable that molded articles, e.g., bumper, can be made of the same material whether it is to be painted or not, viewed from material unification, for which such a material should have as small a difference as possible between molding shrinkage and shrinkage after heating. The above patent publications are completely silent on this matter.
It is an object of the present invention to provide a resin composition high in melting flow, exhibiting good properties, excellent in moldability, shrinkage properties and mechanical properties while solving the above problems, and suitable for automobile exteriors, e.g., bumpers, rocker moldings, sidemoldings and overfenders.
The inventors of the present invention have found, after having extensively studied to solve the above problems, that the resin composition high in melting flow, exhibiting good properties and excellent in internal molding pressure can be obtained by incorporating a specific ethylene/xcex1-olefin copolymer elastomer, specific styrene-based hydrogenated block copolymer rubber and talc, each at a specific content, in a propylene/ethylene block copolymer having high melting flow, very high crystallinity and propylene homopolymer component, reaching the present invention.
The first invention provides a polypropylene-based resin composition comprising the following components (A) to (D), characterized by its excellent moldability and other properties.
Component (A): Propylene/ethylene block copolymer having a melt flow rate (MFR) of 100 to 200 g/10 min., its propylene homopolymer component having an MFR of 210 to 400 g/10 min. and isotactic pentad fraction (P) of 0.98 or more, and its copolymer portion containing propylene at 65 to 85% by weight; 50 to 70% by weight
Component (B): Ethylene/octene and/or ethylene/butene random copolymer, containing the comonomers at 28% by weight or more for the copolymerization and having an MFR of 0.5 to 20 g/10 min.; 10 to 25% by weight
Component (C): Styrene-based hydrogenated block copolymer rubber having the following structure, containing the segment A of polystyrene structure at 1 to 25% by weight; 4 to 9% by weight
A-B, or
A-B-A
xe2x80x83wherein, the segment A is a polystyrene structure and segment B is an ethylene/butene or ethylene/propylene structure.
Component (D): Talc, having an average particle size of 10 xcexcm or less, determined by the laser-aided diffractometry; 16 to 24% by weight
The second invention is the polypropylene-based resin composition of the first invention whose resin composition has the following properties; internal molding pressure: 38 MPa or less, MFR: 36 to 50 g/10 min., flexural modulus of elasticity: 1750 MPa or more, brittleness temperature: xe2x88x9215xc2x0 C. or lower, tensile elongation: 200% or more, and difference between molding shrinkage and shrinkage after heating: {fraction (1.5/1000)} or less.
The present invention provides the polypropylene-based resin composition, comprising (A) propylene/ethylene block copolymer, (B) ethylene/octene and/or ethylene/butene random copolymer, (C) styrene-based hydrogenated block copolymer rubber, and (D) talc. Each of these components is described in more detail.
[I] Components of the Resin Composition
(A) Propylene/Ethylene Block Copolymer (Component (A))
(1) Properties of the Propylene/Ethylene Block Copolymer
The propylene/ethylene block copolymer (Component (A)) for the polypropylene-based resin composition of the present invention has a melt flow rate (MFR at 230xc2x0 C. and a load of 2.16 kg) of 100 to 200 g/10 min., preferably 105 to 170 g/10 min., more preferably 105 to 140 g/10 min. At an MFR less than 100 g/10 min., the propylene/ethylene block copolymer is insufficient in melting flow and exposed to a high internal molding pressure during the molding process for producing the thin-wall articles. This requires a molder of high clamping force, and deteriorates productivity. At an MFR more than 200 g/10 min., on the other hand, the propylene/ethylene block copolymer will have insufficient brittleness temperature and tensile elongation.
The propylene/ethylene block copolymer is preferably adjusted for its MFR during the polymerization process. When adjusted after the polymerization process with an organic peroxide, e.g., diacyl peroxide or dialkyl peroxide, the propylene/ethylene block copolymer needs a higher internal molding pressure during the molding process than the one adjusted during the polymerization process, and is unsuitable.
The propylene homopolymer component of the propylene/ethylene block copolymer has an MFR of 210 to 400 g/10 min., preferably 220 to 350 g/10 min., more preferably 250 to 300 g/10 min., and an isotactic pentad fraction (P) of 0.98 or more, preferably 0.985 or more.
The propylene homopolymer component of the propylene/ethylene block copolymer will needs a higher internal molding pressure during the molding process when its MFR is more than 400 g/10 min., and insufficient brittleness temperature and tensile elongation when its MFR is less than 210 g/10 min.
The propylene/ethylene block copolymer will have an insufficient flexural modulus of elasticity when isotactic pentad fraction (P) of its propylene homopolymer component is less than 0.98.
Isotactic pentad fraction (P) means the isotactic fraction of the pentad unit in the polypropylene molecular chain, determined by 13C-NMR.
The copolymer portion of the propylene/ethylene block copolymer contains propylene at 65 to 85% by weight, preferably 67 to 75%. The propylene/ethylene block copolymer tends to have an insufficient tensile elongation when the propylene content is less than 65% by weight, and insufficient flexural modulus of elasticity when it is more than 85% by weight, and hence is undesirable.
(2) Production of the Propylene/Ethylene Block Copolymer
The propylene/ethylene block copolymer is produced in the presence of a catalyst of high stereoregularity. The examples of such catalysts include those produced by combining a titanium trichloride composition with an organoaluminum compound and aromatic carboxylate ester, where the titanium trichloride composition is produced by reducing titanium tetrachloride with an organoaluminum compound and treating the product with various electron donors and acceptors, as disclosed by Japanese Patent Laid-Open Nos.100806/1981, 120712/1981 and 104907/1983; and the impregnated type catalysts produced by bringing a magnesium halide into contact with an titanium tetrachloride and various electron donors, as disclosed by Japanese Patent Laid-Open Nos.63310/1982, 43915/1988 and 83116/1988.
The propylene/ethylene block copolymer is produced by copolymerization of propylene and ethylene in the presence of the above catalyst by a known method, e.g., vapor-phase fluidized bed, solution or slurry method.
(3) Content of the Propylene/Ethylene Block Copolymer
The above propylene/ethylene block copolymer is incorporated in the polypropylene-based resin composition of the present invention at 50 to 70% by weight, preferably 50 to 65%, more preferably 52 to 60%.
The polypropylene-based resin composition will have an insufficient flexural modulus of elasticity when the content is less than 50% by weight, and insufficient brittleness temperature when it is more than 70% by weight.
(B) Ethylene/Octene and/or Ethylene/Butene Random Copolymer (Component (B))
(1) Properties of the Ethylene/Octene and/or Ethylene/Butene Random Copolymer
The component (B) for the polypropylene-based resin composition of the present invention, i.e., an elastomer of ethylene/octene and/or ethylene/butene random copolymer, is used to improve impact resistance of the composition, and also make the composition exhibit good moldability, shrinkage characteristics and other properties. When combined with the component (C) described below, it makes the composition exhibit better property balances and moldability.
The elastomer as the component (B) contains the comonomer, 1-octene or 1-butene, at 28% by weight or more, and has an MFR (230xc2x0 C., load: 2.16 kg) of 0.5 to 20 g/10 min., preferably 0.7 to 15 g/10 min., more preferably 0.9 to 10 g/10 min. At an MFR less than 0.5/10 min., the elastomer has an insufficient tensile elongation. At an MFR more than 20 g/10 min., on the other hand, the elastomer will have insufficient brittleness temperature. The elastomer will also have insufficient brittleness temperature when its comonomer content is less than 28% by weight.
The component (B), i.e., ethylene/octene and/or ethylene/butene random copolymer, may comprise one component or two or more components.
(2) Production of the Ethylene/Octene and/or Ethylene/Butene Random Copolymer
The component (B) is produced by copolymerization of ethylene with 1-octene or 1-butene in the presence of the so-called Ziegler type catalyst composed of a titanium compound (e.g., titanium halide), organoaluminum-magnesium complex (e.g., alkyl aluminum-magnesium or alkyl alkoxyaluminum-magnesium complex) and alkyl aluminum or alkyl aluminum chloride, or a metallocene catalyst disclosed by, e.g., WO-91/04257. In particular, the metallocene catalyst gives the copolymer having more preferable effects. It can be produced by a known polymerization method, e.g., vapor-phase fluidized bed, solution or slurry method.
(3) Content of the Ethylene/Octene and/or Ethylene/Butene Random Copolymer
The above ethylene/octene and/or ethylene/butene random copolymer is incorporated in the polypropylene-based resin composition of the present invention at 10 to 25% by weight, preferably 12 to 20%. The polypropylene-based resin composition will have an excessive difference between molding shrinkage and shrinkage after heating (hereinafter referred to as xcex94 shrinkage) when the content is less than 10% by weight, and insufficient flexural modulus of elasticity when it is more than 25% by weight, and hence is undesirable.
(C) Styrene-Based Hydrogenated Block Copolymer Rubber (Component (C))
(1) Structure of the Styrene-Based Hydrogenated Block Copolymer Rubber
The styrene-based hydrogenated block copolymer rubber (Component (C)) as the constituent of the polypropylene-based resin composition of the present invention is the elastomer component used to make the above-described component (B) exhibit the effect of improving impact resistance more effectively, even in a small quantity.
More concretely, this styrene-based hydrogenated block copolymer rubber contains the following segment A of polystyrene structure at 1 to 25% by weight:
A-B, or
A-B-A
wherein, the segment A is a polystyrene structure and segment B is an ethylene/butene or ethylene/propylene structure.
The concrete examples of the above-described styrene-based hydrogenated block copolymer rubber include styrene/ethylene/butene/styrene block copolymer (SEBS) and styrene/ethylene/propylene/styrene block copolymer (SEPS).
The elastomer copolymer of the above block structure may be a mixture of the tri-block and di-block structures, described above.
Ratio of the segment A of the above-described polystyrene structure is 1 to 25% by weight, preferably 5 to 25%, more preferably 7 to 22%. The copolymer rubber will have insufficient brittleness temperature, when the ratio is more than 25% by weight, and is undesirable.
(2) Production of the Styrene-Based Hydrogenated Block Copolymer Rubber
The styrene-based hydrogenated block copolymer rubber as the component (C) may be produced by the common anion living polymerization, where styrene, butadiene and styrene are polymerized consecutively to produce the tri-block structure which is then hydrogenated (production of SEBS), or the di-block copolymer of styrene and butadiene is produced first, and then converted into the tri-block structure by the aid of a coupling agent and hydrogenated styrene/isoprene/styrene tri-block copolymer may be produced by replacing butadiene with isoprene (production of SEPS).
(3) Content of the Styrene-Based Hydrogenated Block Copolymer Rubber
The elastomer of the above structure as the component (C) is incorporated in the polypropylene-based resin composition of the present invention at 4 to 9% by weight, preferably 5 to 8%, more preferably 5 to 7%.
The polypropylene-based resin composition will have insufficient brittleness properties when the content is less than 4% by weight, and an insufficient flexural modulus of elasticity and excessive xcex94 shrinkage when it is more than 9% by weight, and hence is undesirable.
(D) Talc (Component (D))
(1) Properties of Talc
Talc (Component (D)) as the constituent of the polypropylene-based resin composition of the present invention has an average particle size of 10 xcexcm or less, preferably 0.5 to 8 xcexcm or less. The polypropylene-based resin composition has an insufficient flexural modulus of elasticity when the size is out of the above range, and hence is undesirable.
The average particle size can be determined from the cumulative particle size distribution curve at cumulative 50% by weight, the curve being prepared by a laser-aided diffraction analyzer (e.g., HORIBA""s LA-920) or liquid layer settling type light transmission analyzer (e.g., SHIMADZU""s CP). The average particle size was determined by the former method for the present invention.
The talc can be obtained by finely crushing naturally occurring one by a mechanical means, and classifying the particles precisely. The crushed particles may be classified first roughly and then more precisely.
The mechanical means include crushers, e.g., jaw, hammer, roll and jet crushers, and mills, e.g., screen, colloid, roll and vibration mills.
The crushed talc particles are classified by the wet or dry method once or repeatedly to have a desirable average size for the present invention. The useful devices for classifying them include cyclone, cyclone air separator, micro separator, and sharp-cut separator. It is preferable to crush the talc to have a size in a specific range, and classify the crushed particles by a sharp-cut separator, to prepare the talc for the present invention.
The talc may be surface-treated with various additives to improve its adhesion to or dispersibility in the polymer. These additives include a coupling agent of organic titanate, coupling agent of organic silane, graft-modified polyolefin of unsaturated carboxylic acid or its anhydride, fatty acid, metallic salt of fatty acid, and fatty acid ester.
(2) Content of Talc
It is important that the talc is incorporated in the polypropylene-based resin composition of the present invention at 16 to 24% by weight, preferably 19 to 22%.
The polypropylene-based resin composition will have an insufficient flexural modulus of elasticity when the content is less than 16% by weight, and an insufficient brittleness temperature when it is more than 24% by weight.
(E) Additional Components (Optional)
The polypropylene-based resin composition of the present invention may be incorporated with, in addition to the above essential components (A) to (D), one or more additional components (optional components), so long as the effect of the present invention is not notably damaged.
These additional components (optional components) useful for the present invention include antioxidant, e.g., phenol- and phosphorus-based ones; weathering-inhibiting agent, e.g., hindered amine-, benzophenone- and benzotriazole-based ones; nucleating agent, e.g., organoaluminum and organophosphorus compounds; dispersant represented by a metallic salt of stearic acid; colorant, e.g., quinacridon, perylene, phthalocyanine, titanium oxide and carbon black; whiskers, e.g., those of fibrous potassium titanate, fibrous magnesium oxysulfate, fibrous aluminum borate and calcium carbonate; and carbon fibers and glass fibers.
[II] Method of Producing Polypropylene-Based Resin Composition
(1) Kneading
The polypropylene-based resin composition of the present invention is produced by kneading the above components by a common extruder, Banbury mixer, roll, Brabender Plastograph or kneader, set at around 180 to 250xc2x0 C. Of these, an extruder, in particular biaxial type, is more preferable.
(2) Molding
The method for molding the polypropylene-based resin composition of the present invention is not limited. It may be molded by the method commonly used in the synthetic resin industry, e.g., injection molding, injection compression molding and blow molding, of which injection molding is more preferable for the effects of the present invention.
[III] Polypropylene-Based Resin Composition
(1) Properties
The polypropylene-based resin composition of the present invention, produced by the above-described method, is good in fabricability for injection molding, and exhibits the following excellent properties with respect to flexural modulus of elasticity, brittleness temperature properties and tensile elongation:
(a) MFR: 36 to 50 g/10 Min.
(b) Flexural modulus of elasticity: 1750 MPa or more
(c) Brittleness temperature: xe2x88x9215xc2x0 C. or lower
(d) Tensile elongation: 200% or more
(e) Internal molding pressure: 38 MPa or less
(f) xcex94 shrinkage: {fraction (1.5/1000)} or less
(2) Purposes
The polypropylene-based resin composition of the present invention, exhibiting the above-described favorable properties, can be molded into various shapes, preferably into automobile exteriors, e.g., bumpers, rocker moldings, sidemoldings and overfenders.
The present invention is described more concretely by EXAMPLES.
The following analytical methods and stock materials were used for EXAMPLES
[I] Analytical Methods
(1) MFR: Determined in accordance with ASTM-D1238 at 230xc2x0 C. and a load of 2.16 kg.
(2) Flexural modulus of elasticity: Determined in accordance with ASTM-D790 at 23xc2x0 C. and a bending speed of 2 nm/min.
(3) Brittleness temperature: Determined in accordance with ASTM-D746.
(4) Tensile elongation: Determined in accordance with ASTM-D638 at 23xc2x0 C. and a tensile speed of 10 mm/min.
(5) Internal molding pressure: Determined by the method described in EXAMPLES
(6) xcex94 shrinkage: Determined by the method described in EXAMPLES, and the samples having a xcex94 shrinkage of {fraction (1.5/1000)} or less are marked with xe2x80x9c∘xe2x80x9d (which means xe2x80x9cpassedxe2x80x9d) and those having the value exceeding the above are marked with xe2x80x9cxxe2x80x9d (which means xe2x80x9cnot passedxe2x80x9d).
(7) Isotactic pentad fraction (P): Determined by the method described in Macromolecule, 8, 687 (1975) using 13C-NMR.
[II] Stock Materials
(1) Propylene/Ethylene Block Copolymer (Component (A))
Table 1 shows the propylene/ethylene block copolymers used as the component (A) for the present invention.
PP-8 comprised 100 parts by weight of PP-5 incorporated with 0.01 parts by weight of 1,3-bis-(t-butylperoxypropyl)benzene (NOF Corporation; Perbutyl P), and granulated at 230xc2x0 by a monoaxial extruder (Thermo Corporation; Thermo50) to have an MFR of 118 g/10 min.
(2) Ethylene/Octene and/or Ethylene/Butene Random Copolymer (Component (B))
Table 2 shows the elastomer components (Component (B)) used for the present invention.
(3) Styrene-Based Hydrogenated Block Copolymer Rubber (Component (C))
Table 3 shows the elastomer components (Component (C)) used for the present invention.
(4) Talc (Component (D))
Table 4 shows talc as the component (D) used for the present invention.

Propylene resin composition excellent in moldability and physical properties


A method of analyzing foreign matter in a sample includes:                measuring an optical spectrum for each of a plurality of measurement points of a measurement region on the sample by a microscopic spectroscope;        calculating a feature value of each measured spectrum by a computer;        determining whether each of the measurement points is on the foreign matter or not based on each feature value;        retaining the spectrum of the measurement point that is determined to be on the foreign matter, and        deleting the spectrum of the measurement point that is not determined to be on the foreign matter or storing the same to a storage unit; and        executing multivariate analysis of the spectra of the plurality of the measurement points that are determined to be on the foreign matter or classifying the same with AI search.

When presence/absence of "foreign matter" having a component different from the original components of the measurement target is to be determined, an analysis apparatus that can detect the foreign matter without overlooking and can further specify the substance constituting the foreign matter with good accuracy is demanded.
Measurement ability of microscopic spectroscopes has improved in recent years, and a plurality of measurement points can be set in a measurement region that contains a foreign matter, and numerous spectra can be measured. A technique of spectral imaging that displays a distribution state of a foreign matter in the measurement target as a two-dimensional or three-dimensional image (spectral image) by statistically analyzing these spectra has been developed. Furthermore, it is now possible to identify the constituents of a foreign matter by a spectrum search program using a database, and reflect the result thereof to the spectral image.
As a technique of statistically analyzing numerous spectra, multivariate analysis is very effective. Non-patent literature 1 introduces benefits and disadvantages of spectral imaging using multivariate analysis.

Foreign matter analysis Method, storage medium storing foreign matter analysis program, and foreign matter analysis apparatus


A power system including a selective reduction catalyst and an exhaust gas mixer positioned downstream thereof. The exhaust gas mixer includes an inlet opening a plurality of peripheral inlet openings and a plurality of swirler guides. The inlet opening is positioned to receive a first portion of exhaust gas exiting the SCR catalyst, while the plurality of peripheral inlet openings are positioned to receive a second portion of exhaust gas exiting the SCR catalyst. The swirler guides extend radially inwards from a respective peripheral inlet opening, so as to swirl the second portion of exhaust gas about and into the first portion of exhaust gas.

Manufacturers of nonroad diesel engines are expected to meet set emissions regulations. For example, Tier 3 emissions regulations required an approximate 65 percent reduction in particulate matter ("PM") and a 60 percent reduction in nitrogen oxides ("NOx") from 1996 levels. As a further example, Interim Tier 4 regulations required a 90 percent reduction in PM along with a 50 percent drop in NOx. Still further, Final Tier 4 regulations, which will be fully implemented by 2015, will take PM and NOx emissions to near-zero levels. Manufacturers of maritime engines are also expected to meet emissions regulations though they vary from the nonroad emissions regulations (e.g., International Maritime Organization regulations).
One technique for reducing NOx involves introducing chemically inert gas into the fresh intake gas for subsequent combustion. By reducing the oxygen concentration of the resulting charge to be combusted, the fuel burns slower and peak combustion temperatures are reduced, thereby lowering the production of NOx. In an internal combustion engine environment, such chemically inert gases are readily abundant in the form of exhaust gas, and one known method for achieving the foregoing result is through the use of an EGR system operable to controllably introduce a recirculated portion of the exhaust gas, from the exhaust manifold, into an intake manifold.
To reduce the NOx levels further, a reductant—such as diesel exhaust fluid (DEF)—is injected into the exhaust stream, where it decomposes into ammonia (NH3). Nitrogen oxides react with the ammonia in a selective catalytic reduction (SCR) canister, which includes an SCR catalyst and ammonia oxidation catalyst (AOC). This reaction forms harmless nitrogen gas and water vapor. From the dual catalyst SCR canister, the exhaust gas flow by a NOx sensor, and out the exhaust outlet to the atmosphere.


In current approaches to M2M architectures, no interworking application programming interfaces (API's) are exposed to the service layers that are in the local network. Thus, a service layer might not able to make various requests including, for example, that devices be triggered, that the service layer receive notifications when devices are connected to the network, and that the service layer receive notifications when devices are no longer connected to the network. Described herein is a small cell architecture that provides an interworking interface to applications and service layers that reside in the local small cell network. For example, a small cell or eNB may send a notification, for example to a Local Security Capability Exposure Function (L-SCEF) or a core network function, when a UE attaches to or disconnects from a local network.

Referring initially to FIG. 1, an example Service Capability Exposure Function (SCEF) 102 is depicted. The Service Capability Exposure Function (SCEF) is a new function that is being discussed within 3GPP SA2. The SCEF is currently defined in the 3GPP Technical Report (TR) 23.708, "Architecture Enhancements for Service Exposure," which is incorporated by reference as if the contents of which are set forth herein. As stated in 3GPP TR 23.708, with respect to the SCEF, "The exposure of services by the network creates a 'toolbox' of capabilities that, with proper authorization, can be used, for example, to retrieve information, to request specific services, to receive notifications, to request the setting of specific parameters, etc."
As further described in 3GPP TR 23.708, the SCEF is part of the "trust domain" in the sense that the core network will consider it a trusted entity with a secure connection to the core network. The SCEF, however, may be owned by a third party. The design of the interface between the SCEF and the core network should take ownership of the SCEF into account. For example, it might not be desirable to expose information, such as International Mobile Subscriber Identities (IMSI's), on this interface. As shown in FIG. 1, applications 104 can access application programming interfaces (API's). In accordance with the example, a service layer, a common services entity (CSE), and a service capability server (SCS) can be represented by one of the applications 104.
Referring now to FIG. 2, an example architecture for a local IP access (LIPA) or a Selected IP Traffic Offload (SIPTO) is shown. FIG. 2 is reproduced from 3GPP Technical Specification (TS) 23.401, "General Packet Radio Service (GPRS) enhancements for Evolved Universal Terrestrial Radio Access Network (E-UTRAN) access," which is incorporated by reference as if its contents are set forth herein. With respect to embodiments described herein, the HeNB 202 shown in FIG. 2 may also represent an eNB or small cell, which may be referred to collectively as a eNB/small cell. The L-GW 204 may be associated with a single eNB/Small Cell or it may be deployed in a Small Cell Network and connected to multiple eNB's/Small Cells. As shown, the L-GW 204 appears like a combined Serving Gateway (S-GW)/Packet Data Network (PDN) Gateway (P-GW) to the UE 206. The L-GW 204 is an IP data network anchor, which may be referred to generally as a local network anchor. The UE 206 may request to establish an LIPA PDN connection with the L-GW instead of a regular PDN connection with the S-GW/P-GW. The L-GW is deployed in the Local IP Network, which is geographically associated with the eNB/Small Cell Location. Thus, local IP traffic associated with the UE 206 can be routed more directly to/from the local services that it wishes to access. This may be an efficient alternative to routing the data through the core network and back into the local network. Similar to the P-GW, the L-GW 204 may provide various functions such as, for example, UE IP Address Allocation, DHCPv4 (server and client) and DHCPv6 (client and server) functions, Packet Screening and Neighbor Discovery for IPv6 Functionality that is defined in RFC 4861, Neighbor Discovery for IP version 6 (IPv6). Additionally, the L-GW 204 may support Evolved Packet System (EPS) Connection Management (ECM)-IDLE mode downlink packet buffering and ECM-Connected mode direct tunneling towards the HeNB 202.
Turning now to Selected IP Traffic Offload (SIPTO), SIPTO is described in Section 4.3.15a.1 of 3GPP TS 23.401. SIPTO generally refers to the case in which IP traffic is routed to an IP network without it traversing the mobile operator's network. For example, this may be achieved when the UE 206 establishes a PDN connection with the L-GW 204 that is colocated with the (H)eNB 202/Small Cell or a standalone L-GW function. With respect to SIPTO at the Local Network with a stand-alone GW (e.g., with S-GW and L-GW colocated) function, this type of SIPTO is described in section 4.3.15a.2 of 3GPP TS 23.401. In this type of L-GW deployment, the L-GW 204 is a standalone function and may serve multiple eNBs/Small Cells. A Local Home Network ID is associated with the L-GW 204. The eNB/Small Cells inform the Mobile Management Entity (MME) 208 that the L-GW 204 is accessible, and identify the L-GW 204 with the Local Home Network ID.
With respect to SIPTO at the Local Network with the L-GW 204 colocated with the (H)eNB 202, this type of SIPTO is described in section 4.3.15a.3 of reference 3GPP TS 23.401. In this type of L-GW deployment, the L-GW 204 is collocated with the (H)eNB 202. A Local gateway (GW) Address is associated with the L-GW 204. The eNB/Small Cells inform the MME 208 that the L-GW 204 is accessible, and identify the L-GW 204 with the Local GW Address.
Turning now to device triggering, a use case is considered in which an Application Server (AS) wants to communicate with a device application or a device service layer, but the device has no IP address or the Application Server does not know the device's IP address. Examples of Application Servers include, without limitation, a Service Layer, a SCS, an Infrastructure Node (IN)-CSE, or a Middle Node (MN)-CSE. A device trigger refers to a message that is initiated by an Application Server and sent to a device, usually over the control plane. Because it is sent over the control plane, an IP address is not needed to address the device. The trigger is sent to an external 3GPP identifier, such as an MSISDN or a URI for example. Device triggers can be used to send small amounts of application or device service layer data from an Application Server to a UE. A small amount of data can be sent to an application when no response is expected. For example, an Application Server can use a device trigger to instruct a sensor to turn on. If the Application Server expects no response, then no IP connection would be required. Device triggers can also be used to instruct a device application, or service layer, to initiate communications with the Application Server. In some cases, if an Application Server wishes to address a Machine Type Communication (MTC) device application that does not have an IP address, a device trigger is required.
A trigger may be delivered to an MTC device application that already has an IP address. For example, an Application Server may wish to establish a connection with an MTC device application, but the Application Server might not know the device's IP address or the Application Server might be unsure of whether the MTC device has an IP address.
With respect to X2 handover, in E-UTRAN, the eNB's can perform direct handover via the direct interface (known as X2 interface) between eNodeBs. In the X2-based handover (HO) procedure, which is described in oneM2M TS-0001, the source eNodeB and the target eNodeB prepare and execute the HO procedure. At the end of the HO execution, the target eNodeB requests the MME to switch the downlink data path from the source eNodeB to the target eNodeB. The MME in turn requests the serving GW to switch the data path toward the new eNodeB.
With respect to S1 handover procedures, which are described in 3GPP TS 23.401, an S1-based HO procedure may be used when the X2 procedure cannot be used. For example, the S1 based HO procedure may be used when there is no X2 interface between the source and target eNodeB's, or when the target eNodeB requires that a different MME and/or S-GW be used. The S1 procedure may be initiated when the eNodeB sends a handover required message to the MME via the S1-MME reference point.
With respect to Non-Access Stratum (NAS) Signaling, NAS signaling between the UE and MME is described in 3GPP TS 24.301, "Non-Access Stratum (NAS) protocol for Evolved Packet System (EPS)"; Stage 3, which is incorporated by reference as if its contents are set forth herein. As described in 3GPP TS 24.301, the NAS signaling between the UE and MME traverses the eNodeB/Small Cell, but it is usually ciphered and always integrity protected so that it cannot be modified or altered by the eNodeB/Small Cell. As further described in 3GPP TS 24.301, the eNodeB/Small Cell may append information to an NAS message, but may not modify or inspect the message itself.
Referring now to FIG. 3, an example M2M service layer is shown. Service Layers are generally a type of message bus or middleware that defines how services interact with applications and other services. A given Service Layer protocol may bind to a set of transport layer protocol(s). The oneM2M Service Layer is organized as a set of common functions (or service capabilities), an instantiation of which is referred to as a Common Services Entity (CSE). The oneM2M Service Layer is further described in oneM2M TS-0001, "Functional Architecture," which is incorporated by reference as if its contents are set forth herein. The common functions are exposed via the Mca, Mcc and Mcn reference points as shown in FIGS. 3 and 4. FIG. 4 also depicts the Msc reference point. The Msc reference point specifies a set of interactions between the Service Capabilities of different Service Components. The realization of the interaction between the Services Capabilities is implementation specific, as described in oneM2M TS-0007, "Service Component Architecture," which is incorporated by reference as if its contents are set forth herein.
Referring also to FIG. 4, the Mca reference point designates communication flows between an Application Entity (AE) and a CSE, and the Mcc reference point designates communication flows between two CSEs in the same M2M Service Provider domain. Communications across Mca and Mcc take place via paired Request/Response messages, wherein each request performs a specific RESTful operation (e.g., Create, Retrieve, Update, and Delete) upon a resource hosted on the targeted CSE. The Mcc′ reference point is used between CSEs located in the Infrastructure Domain of different M2M SPs. The Mcn reference point is used between a CSE and an underlying Network Services Entity (NSE) for services other than transport and connectivity. CSEs are hosted on architectural entities referred to as "nodes". A node generally refers to a functional entity that contains a) one CSE and zero or more AEs, or b) one or more AEs. The oneM2M architecture makes no assumptions about the underlying platform and protocols that are used to pass messages on the Mcc, Mca, Mcc′, and Mcn reference points. For example, the services that are provided by CSE's may vary from a temperature sensor service that is implemented on a low cost device to a billing system that is deployed on a large network server. Thus, the architecture is well suited for utilizing a messaging protocol.
In current approaches to M2M architectures, as described above, no interworking API's are exposed to the Service Layers that are in the local network. Thus, a service layer might not able to make various requests including, for example, that devices be triggered, that the service layer receive notifications when devices are connected to the network, and that the service layer receive notifications when devices are no longer connected to the network.

Notification and trigger for service layers and applications in a small cell network


A supporting structure is wafer-bonded to the upper face side of a partially or fully processed device wafer. The device wafer includes a transistor having a well region that extends into the substrate material of the device wafer. The source and drain regions of the transistor extend into the well region. After attachment of the supporting structure, the device wafer is thinned from the back side until the bottom of the well region is reached. To reduce source and drain junction capacitances, etching can continue until the source and drain regions are reached. In one embodiment, all of the well-to-substrate junction is removed in a subsequent etching step, thereby reducing or eliminating the well-to-substrate junction capacitance of the resulting transistor. Resistance between the well electrode and the transistor channel is reduced because the well contact is disposed on the back side of the device wafer directly under the gate of the transistor.

The present invention relates to bond and etchback semiconductor-on-insulator (BESOI) semiconductor processing technology and related structures.
FIG. 1 (Prior Art) is a cross-sectional diagram of a conventional complementary metal oxide semiconductor (CMOS) transistor structure 1 often used in contemporary ultra large scale integration. The diagram is simplified to better illustrate the related issues. Structure 1 includes a P-channel transistor 2 having a source region 3, a drain region 4 and a gate 5. A channel region exists between source region 3 and drain region 4. Source region 3 and drain region 4 extend into in an N-type well region 6.
The structure also includes an N-channel transistor 7 having a source region 8, a drain region 9 and a gate 10. A channel region exists between source region 8 and drain region 9. Source region 8 and drain region 9 extend into in a P-type well region 11. Well regions 6 and 11 are diffused into a bulk semiconductor substrate 12. Bulk substrate 12 in this case is monocrystalline silicon of a silicon wafer. In this example, well region 11 is reverse biased with respect to substrate 12. Each of the wells and the substrate is provided with a contact so that the wells and substrate can be maintained at the appropriate potentials. Above the upper surface 13 (sometimes called the xe2x80x9cface sidexe2x80x9d) of the semiconductor wafer are multiple interleaved layers of metallization and insulation (not shown). The metallization layers interconnect the various transistors to form a desired integrated circuit.
In MOS transistors such as the transistors of FIG. 1, switching speed is limited by the time required to charge and discharge the capacitances between device electrodes. If parasitic capacitances between the device electrodes can be reduced, then device speed can be increased. In each of the two transistors of FIG. 1, there exists a junction capacitance between the source region and the well region, a junction capacitance between the drain region and the well region, and a junction capacitance between the P-well region and the substrate. A process is desired that reduces these capacitances and therefore speeds transistor operation.
In addition to transistors 2 and 7 of FIG. 1 being slowed due to the presence of parasitic junction capacitances, the performance of transistors 2 and 7 also suffers due to a resistance existing between the well contact and the channel of each transistor. Radiation such as alpha particles can be penetrate into the semiconductor material of the transistors. Each alpha particle generates electron-hole pairs along its path as it passes into the semiconductor material of the device. If, for example, the electron-hole pairs are generated in a portion of the semiconductor material in which an electric field is present (for example, due to the reverse bias of a well-to-substrate junction), then the electrons and holes may be separated by the electric field. The resulting current is then typically drawn out of the well region through the well contact. One such alpha particular may, for example, generate one million such electron hole pairs. If the current path of the resulting current passes under the channel on its way from the well-to-substrate junction to the well contact, then a momentary voltage drop will exist across the current path due to the resistance of the well under the channel. This momentary voltage may affect the threshold voltage of the transistor or otherwise affect transistor operation.
In addition to currents flowing past the channel region of a transistor due to alpha particles, the normal switching of the transistors can also cause undesirable currents to flow in the transistor structure of FIG. 1. A first junction capacitance exists between the well region of the N-channel transistor and the substrate. A second junction capacitance exists between the substrate and the well region of the P-channel transistor. These capacitances are oriented in series with one another. Consider the situation in which the drains of the N-channel and P-channel transistors are coupled together to that the transistors form an inverter. As the transistors switch, the voltages on the drains of the transistors change, thereby causing small local changes in the voltages in the well regions. The result is current flow in a current path formed by the series coupled capacitances. This current through the well resistance, like the current due to alpha particles, may cause momentary voltage changes as the current flows through the resistance of the well region underneath a transistor channel. Such voltage fluctuations may adversely affect transistor operation.
These and other problems exist due to resistances and junction capacitances of the structure.
Using silicon-on-insulator (SOI) processing technology, transistors can be fabricated in a thin semiconductor layer that is supported and insulated from an underlying supporting substrate. In one so-called xe2x80x9cbond and etchbackxe2x80x9d SOI (BESOI) device architecture, an insulating layer is formed over a device wafer. Etch stops are formed into the surface of the device wafer. A supporting xe2x80x9chandlexe2x80x9d wafer is then bonded to the insulating layer of the device wafer, and the back side of the device wafer is thinned in a planar fashion using a thinning technique until the etch stops are reached. Chemical mechanical polishing (CMP) may be used to perform this thinning. The resulting structure is a very thin layer of the device wafer that is insulated from the underlying supporting substrate by the insulating layer. Transistors are then formed into this thin layer of the device wafer. Because the transistors do not have well regions that extend into the underlying supporting substrate, the transistors do not have the associated junction capacitances. Commonly acknowledged advantages of BESOI devices include: 1) less junction capacitance so higher speed can be achieved, 2) reduced susceptibility to problems causes by radiation such as alpha particles, and 3) better isolation between transistors and increased freedom from latchup.
Although such BESOI techniques exist, the transistors nonetheless still suffer from an amount of junction capacitance. Moreover, the resistance of the well material in the area underneath the channel is present. Current through this area can still cause voltages that have undesirable influences on transistor operation. Resistance of the transistors to single event upsets, although improved, still remains. In addition to the well contacts involving a resistance, they also occupy an amount of area on the surface SOI wafer.
An improved processing technology is desired.
A supporting structure such as a silicon wafer is wafer-bonded to the upper face side of a partially processed or fully processed device wafer. The device wafer includes a field effect MOS transistor. The field effect transistor includes a well region that extends into the substrate material of the device wafer. The source region and drain region of the field effect transistor extend at least partly into the well region.
After attachment of the supporting structure, the device wafer is thinned from the back side of the device wafer until the bottom of the well region is exposed. A well contact region is then ion implanted into the exposed bottom surface of the well region and a metal electrode is formed to make contact to the well region from the back side of the device wafer. The resulting transistor structure has a reduced amount of well-to-substrate parasitic junction capacitance because the well region to substrate junction area that would have otherwise existed on the bottom of the well region has been removed. Resistance between the well contact and the channel region of the transistor is reduced because the well contact is disposed close to the channel region directly under the gate of the transistor.
In another embodiment, the substrate region of a device wafer is thinned from the back side until the bottom of the well region is exposed. All the substrate material disposed underneath the well region is therefore removed. A subsequent etching step is then performed to etch away all remaining portions of the substrate region (for example, between transistors). The result is islands of well material. There is little or no well-to-substrate material interface because all or substantially all of the substrate material is removed. The associated parasitic well-to-substrate junction capacitance is therefore eliminated or reduced. In one embodiment, contact is made to the well regions by metal that extends down from the top of the source regions and across the bottoms of the well regions to well contact regions disposed directly underneath the gates of the transistors on the back side of the device wafer.
In another embodiment, a device wafer is thinned from the back side past the point of exposing the well region of the transistor. Rather, the device wafer is thinned from the back side until the bottoms of the source and drain regions of the transistor are reached. Only a small amount of the well region remains. This amount of well region material is disposed principally between the source region and the drain region. Accordingly, the associated source-to-well and drain-to-well junction capacitances are reduced. Contact is made to the narrow amount of remaining well material between the source region and the drain region by leaving a relatively large contact portion of the well material in contact with the narrow portion of the well material. The remaining well material therefore has a key-shaped structure. The wide part of the key-shaped structure is the contact portion. The narrow portion of the key-shaped structure is the narrow channel portion.
In one embodiment, a metal well electrode in the interconnect portion of the device wafer makes electrical connection with the key-shaped well structure via the contact portion of the key-shaped well region. The contact portion of the key-shaped well region is therefore coupled in a vertical direction to the well electrode in the overlaying interconnect portion of the device wafer.
In another embodiment, metal is deposited and patterned onto the back side of the device wafer to make a well electrode that contacts the remaining well region from the back side of the device wafer. A bias voltage is placed onto this well electrode from a source disposed on the back side of the device wafer, as opposed to being supplied from a well electrode disposed in the interconnect portion of the device wafer. By placing the well electrode on the back side of the device wafer, space on the upper device side of the device wafer that would otherwise be used for the well contact is now usable for other purposes such as, for example, achieving closer component spacing.
In another embodiment, the narrow portion of the key-shaped well structure between the source region and the drain region is thinned from the back side so that it is thinner than the adjacent source and drain regions. After thinning, the source region, drain region and thinned well material are oxidized to form a thin thermal oxide. An area of the thin thermal oxide is then removed to form a second gate contact area. Metal is then deposited on the thin thermal oxide and is patterned to form a second gate electrode. Metal of the second gate electrode makes electrical contact with the electrode of the first gate through the second gate contact region. The resulting double gate transistor structure has substantially no substrate-to-well region junction capacitance because all or substantially all of the substrate-to-well junction has been removed. The resulting double gate transistor has very little source-to-well or drain-to-well junction capacitance because the well has been thinned and patterned such that the only contact between the well material and the source and drain is in the narrow channel region between the source region and the drain region. The threshold voltage of each of the channels of the resulting double gate transistor can be adjusted to improve subthreshold leakage of the double gate transistor.
By eliminating the substrate material altogether, by reducing the size of the drain regions as compared to the source regions, and/or by placing the well electrodes and associated contacts on the back side of the device wafer, less device wafer surface area is required to fabricate the transistors of the present invention as compared to the transistors of the conventional structure of FIG. 1. Closer component spacing is therefore possible without reducing the minimum feature size achievable with the semiconductor fabrication process used and without any reduction in minimum lithography dimensions.
Other structures and methods are described in the detailed description below. This summary does not purport to define the invention. The invention is defined by the claims.

Bond and back side etchback transistor fabrication process


A method of producing a stereo image from a digital video includes receiving a digital video including a plurality of digital images captured by an image capture device; and using a processor to produce stereo suitability scores for at least two digital images from the plurality of digital images. The method further includes selecting a stereo candidate image based on the stereo suitability scores; producing a stereo image from the selected stereo candidate image wherein the stereo image includes the stereo candidate image and an associated stereo companion image based on the plurality of digital images from the digital video; and storing the stereo image whereby the stereo image can be presented for viewing by a user.

Stereo and multi-view imaging has a long and rich history stretching back to the early days of photography. Stereo cameras employ multiple lenses to capture two images, typically from points of view that are horizontally displaced, to represent the scene from two different points of view. Such multiple images are displayed to a human viewer to let the viewer experience an impression of 3D. The human visual system then merges information from the pair of different images to achieve the perception of depth.
Stereo cameras can come in any number of configurations. For example, a lens and a sensor unit are attached to a port on a traditional single-view digital camera to enable the camera to capture two images from slightly different points of view, as described in U.S. Pat. No. 7,102,686. In this configuration, the lenses and sensors of each unit are similar and enable the interchangeability of parts. Other cameras contain two or more lenses are described, such as in U.S. Patent Application Publication 2008/0218611, where a camera has two lenses and sensors and an improved image (with respect to sharpness, for example) is produced.
In another line of teaching, there are situations where a stereo image (or video) is desired, but only a single-view image (or video) has been captured. This problem is known as 2D-to-3D conversion, and has been addressed in the art. For example, M. Guttmann, L. Wolf, and D. Cohen-Or. Semi-automatic stereo extraction from video footage. In Proceedings of the 2009 IEEE International Conference on Computer Vision, teaches a semi-automatic approach (using user input with scribbles) for converting each image of the video to stereo. In other work, such as D. Hoiem et al, Automatic Photo Pop-up, Proceedings of the 2005 IEEE International Conference on Computer Vision, show that, the 3D geometry of an image is estimated and used to produce images that represent what the scene might look like from another viewpoint.
In another line of teaching, certain frames called keyframes are extracted from a video and used to represent the video. In U.S. Pat. No. 7,643,657, interesting keyframes are selected based on finding shot boundaries and considering other features such as spatial activity and skin detection. However, keyframe extraction does not provide a method for representing a video with a stereo image.


The present invention relates to a multiple channel optical mapping apparatus which can deliver one or simultaneously at least two images of different depth resolutions or sequentially, images with different depth resolutions, or a combination of these images, or a single image with adjustable depth resolution. The multiple channels could be either multiple confocal channel and one or two optical coherence tomography channel, or two optical coherence tomography channels, or two confocal channels. The channels, either OCT or confocal can operate on the same wavelength or on different wavelengths. The apparatus can display both transversal as well as longitudinal images in an object, particularly the eye.

The present invention relates to a dual channel optical mapping apparatus and to methods which can be used to supply images from essentially transparent objects or tissue using different depth resolutions, or, sequentially, images with adjustable depth resolution at the same or at different wavelengths, as required to observe fluorescence or Raman radiation emitted by the object. The two channels of the dual channel apparatus could be either a confocal channel and an optical coherence tomography channel, two optical coherence tomography channels, or two confocal channels.
In the description which follows, reference is made primarily to the eye as the object. This has to be understood as merely a way to help the description and not as a restriction of the application of the present invention. As such, where the term xe2x80x9ceyexe2x80x9d is used, a more general transparent and scattering object or organ may be sought instead.
High depth resolution imaging of the eye fundus can be achieved by optical coherence tomography (OCT) as shown in the paper xe2x80x9cOptical coherence tomographyxe2x80x9d by D. Huang, E. A. Swanson, C. P. Lin, J. S. Schuman, W. G. Stinson, W. Chang, M. R. Hee. T. Flotte, K. Gregory, C. A. Puliafito and J. G. Fujimoto, Science 254, (1991), pp. 1178 and in the paper xe2x80x9cOptical coherence tomographyxe2x80x9d by A. F. Fercher, in J. Biomed. Opt., 1(2), (1996), pp. 157-173. OCT has the potential of achieving much better depth resolution, as the limit in this case is not set by the eye, but by the coherence length of the source. For example, optical sources, such as superluminiscent diodes and mode-locked lasers are now available with coherence lengths below 20 xcexcm.
An OCT apparatus is now commercially available (e.g. from Humphery), which produces longitudinal images only, i.e. images in the planes (x,z) or (y,z), where the z axis is perpendicular to the patient""s face and x and y axes are in the plane of the patient""s face. Examples of such apparatus for longitudinal imaging are described in U.S. Pat. Nos. 5,493,109, 5,537,162, 5,491,524, 5,469,261, 5,321,501 and 5,459,570.
OCT has also been reported as being capable of providing en-face (or transversal) images, as reported in xe2x80x9cCoherence Imaging by Use of a Newton Rings Sampling Function⇄ by A. Gh. Podoleanu, G. M. Dobre, D. J. Webb, D. A. Jackson, published in Opt. Lett., Vol. 21, No. 21, (1996), pp. 1789-1791, xe2x80x9cSimultaneous En-face Imaging of Two Layers in Human Retinaxe2x80x9d Opt. Letters, by A. Gh. Podoleanu, G. M. Dobre, D. J. Webb, D. A. Jackson, published in Opt. Lett., 1997, vol.22, No. 13, pp. pp. 1039-1041 and xe2x80x9cEn-face Coherence Imaging Using Galvanometer Scanner Modulationxe2x80x9d by A. Gh. Podolenu, G. M. Dobre, D. A. Jackson, Opt. Lett. 23, pp. 147-149, 1998. When applied to the eye, however, the en-face OCT images look fragmented, as demonstrated in xe2x80x9cTransversal and Longitudinal Images from the Retina of the living Eye Using Low Coherence Reflectometryxe2x80x9d, by A. Gh. Podoleanu, Mauritius Seeger, George M. Dobre, David J. Webb, David A. Jackson and F. Fitzke, published in the Journal of Biomedical Optics, 3(1), pp. 12-20, 1998. These papers also demonstrate that, owing to the low coherence length, the OCT transversal images show only fragments of the retina and are difficult to interpret.
To improve the usefulness of en-face OCT images, a dual presentation of images was proposed as described in U.S. Pat. No. 5,975,697. Two en-face images are produced and displayed simultaneously; one of which is an OCT image and the other is a confocal image (similar to the image produced by a scanning laser ophthalmoscope (SLO)). The dual presentation allows the fragments sampled by the OCT of the fundus to be uniquely placed in correspondence with fundus images displayed by the confocal channel. The confocal channel, however, has a much larger depth resolution and the images look continuous, offering good guidance of the part of the eye investigated.
The dual display is generally essential not only for guidance, but for subsequent alignment and processing of the stack of en-face images prior to reconstruction of the 3D volume investigated. In addition, it enables the same location in the eye to be accessed easier on subsequent examinations. However, a practical problem of the dual channel imaging instruments is that focusing has to be adjusted simultaneously for both channels. No provisions were presented in U.S. Pat. No. 5,975,697 with respect to this feature.
Another problem with the prior art technique is that the confocal channel taps some of the possibly already weak return signal from the tissue, which results in a lower signal to noise ratio in the OCT channel. For instance, when 10% of the signal is tapped, the loss in the OCT channel can be more than 19%. Therefore, it would be desirable, especially when the target returns a weak signal, to eliminate confocal tapping and return all of the signal to the OCT channel. On the other hand, there are situations when the presentation of an OCT image is not needed and depth analysis using the confocal channel only may be required. Unfortunately, however, the beam-splitter ratio in U.S. Pat. No. 5,975,697 is fixed and therefore, such versatility cannot be achieved.
Another problem is that when this technique is used for OCT of skin or teeth, longer wavelengths are recommended for providing better penetration depth. However, the gain of photocathodes and avalanche photodetectors at longer optical wavelengths is much poorer than that for visible light or, for example, the 800 nm band which is preferred for the retina. Therefore, at longer wavelengths, poorer performance of the confocal channel of the dual instrument as presented in U.S. Pat. No. 5,975,697 is expected. Another problem with the dual channel imaging instrument as described in U.S. Pat. No. 5,975,697 is that the wavelengths of the two channels are the same. The system as such cannot be used to generate a confocal image at a different wavelength from that used in the OCT channel. This prevents the utilisation of the system in fluorescence and autofluorescence imaging, or for Raman studies.
In U.S. Pat. No. 5,459,570, the beam-splitter shared by the confocal and the OCT channel is used in transmission. It is known that the dispersion of the optical material used in beam-splitters, if left uncompensated, leads to deterioration of the depth resolution in the OCT channel. An on-axis fixation lamp is also required for the investigation of the fovea. This requires other beam-splitters to be introduced in the system, which adds further dispersion to the OCT channel.
A still further problem with en-face scanning using galvanometer scanners is that the fly-back of the galvanometer scanner is finite and consequently, more than 20% of the period time of the ramp signal driving the galvanometer scanners, at kHz rates, may be wasted.
In terms of transverse resolution, this feature depends on how well the focus is matched to the coherence position (wherein tracking of the focusing and zero optical path difference are referred to as dynamic focus). Dynamic focus was described in PCT patent publication No. WO 92/19930, but only in principle. Possible optical configurations to simultaneously scan the depth and the position of the focus in the depth are described in U.S. Pat. No. 4,589,773 and in U.S. Pat. No. 6,057,920. These solutions however, require mechanical synchronism of elements or adjustment of ratios of focal lenses. The prior art method works only when the index of refraction of the tissue is known. If the tissue consists of layers of different index of refraction, different adjustments are required. The methods described are devised especially for longitudinal OCT, where B-scan images are generated by fast scanning along the depth coordinate with a slower scanning along a transverse coordinate. As such, the method needs to be fast, and operational at the depth scanning rate of, for example, a rate on the order of 100-1000 Hz. Once different solutions have been devised as described in U.S. Pat. No. 6,057,920, it is very difficult to reconfigure the technique for different values of the refractive index or to apply corrections for multiple layers of different index of refraction.
Another mechanical configuration is disclosed in U.S. Pat. No. 6,201,608, however this method is not applicable for use with the eye.
U.S. Pat. No. 6,172,752B1 discloses a low coherence interferometer where the thickness and the index of refraction of a transparent plate can be determined by measuring the displacement of the plate, or of the lens in the front of the plate in the object arm and of the mirror in the reference arm. The method uses these displacements and the numerical aperture of the beam entering the sample. However, when imaging different layers in the scattering tissue, the index of refraction is unknown and the method is not applicable as no tracking mechanism of the two displacements is described. Additionally, when imaging tissue and the eye, the interface optics complicates the equation which relates the two displacements to be tracked, and additionally, the patients have different eye lengths (i.e. the numerical aperture is not known and the method again is not applicable).
Thus, a need exists for better procedures of implementing dual channel imaging with different depth resolution, which procedures can allow imaging at different wavelengths and allow for focusing adjustment to be tracked in both channels while being compatible with dynamic focus in order to maintain both channels in focus. In particular, better procedures having improved efficiency and which make better use of scanning devices and of the sensitivity of photodetectors, and which can allow for versatile operation of the two channels to cover a large range of possible imaging regimes with the same hardware, are desirable. Accordingly, the present invention provides for improvements over at least one of the problems of the prior art as stated hereinabove, or as described hereinbelow.
As a first advantage, the present invention sets out to solve the above discussed problems and relates to an apparatus wherein both receiver apertures (e.g. OCT and confocal) are maintained in focus.
In a second advantage, the present invention sets out methods and apparatuses to ensure that the confocal optical receiver operates at the maximum sensitivity.
In a third advantage, the present invention sets out methods and apparatuses which allow:
(i) switching from a dual OCT/confocal regime to a predominantly single channel operation regime of either OCT only, or of a predominantly confocal regime (with only minor sensitivity loss to the OCT channel), wherein by balancing the signals returned from the object to the OCT and confocal channels either: (a) complete extinction of the signal returned from the object towards the confocal channel is possible; or (b) a significant reduction of the signal returned to the OCT channel is possible while maximising the signal returned to the confocal channel;
(ii) or operation in a mode having two confocal channels imaging at two different wavelengths.
In a fourth advantage, the invention sets out methods and apparatuses to quasi-simultaneously produce two images of different depth resolution from the same depth.
In a fifth advantage, the invention sets out methods and apparatuses to quasi-simultaneously produce two images at two different wavelengths, as required for the observation of auto-fluorescence or fluorescence, or Raman in the object under investigation.
In a sixth advantage, the invention sets out methods and apparatuses to generate pairs of images or an image, where the pixel position is determined within the raster (or image display) by the actual coordinates of the transversal scanners, irrespective of the movement direction of the transversal scanners. Alternatively, the invention sets out methods and apparatuses to generate double pairs of images for each direction of movement of the transversal scanners.
In a seventh advantage, the invention sets out methods and apparatuses to process and eventually superimpose the OCT image on to the confocal image, of the same or different wavelength, or to produce, process and eventually superimpose OCT images of different depth resolutions, from the same depth.
In an eighth advantage, the invention sets out methods and apparatuses to track the focus in the OCT and confocal channel with the depth scanned in the OCT channel.
The advantages set out hereinabove, as well as other objects and goals inherent thereto, are at least partially or fully provided by an improved optical mapping apparatus of the present invention, having improved focusing means, a versatile optical splitter shared by the confocal and OCT channel and switched optical sources synchronised with imaging means.
Accordingly, in a first aspect, the present invention provides an optical mapping apparatus which comprises:
an optical coherence tomography (OCT) system built around an in-fiber or a bulk interferometer excited by an optical radiation source;
a confocal optical receiver with or without adjustable depth resolution;
an optical splitter, shared by both the interferometer of the OCT and the confocal optical receiver, to direct some of the light returned from an object situated at the object location to the optical confocal optical receiver, where the OCT channel uses the optical-splitter in reflection and the confocal channel in transmission, xe2x80x94regime called as xe2x80x9cReflectionxe2x80x94OCT/Transmissionxe2x80x94Confocalxe2x80x9d, hereinafter xe2x80x9cR-OCT/T-Cxe2x80x9d or optionally wherein the OCT channel uses the optical-splitter in transmission and the confocal channel uses the optical splitter in reflection, xe2x80x94regime called xe2x80x9cTransmission OCT/Reflection-Confocalxe2x80x9d, hereinafter xe2x80x9cT-OCT/R-Cxe2x80x9d;
transverse scanning means, preferably consisting of a line scanner and a frame scanner, to effect transverse scanning of an optical output from the optical splitter (as an imaging beam), over a line or a predetermined area in the object;
interface optics for transferring an optical beam from the transverse scanning means to the object and for transferring an optical output beam reflected and scattered from the object back to the optical-splitter through the transverse scanning means, and from the optical-splitter to both the interferometer of the OCT channel and/or the optical confocal optical receiver of the confocal channel, in a ratio determined by the optical splitter and wavelength;
optionally a fixation lamp for sending light from an external source towards the object;
optionally all interface optics-splitter shared by the fixation lamp beam and the imaging beam, wherein the interface optics-splitter can be used either in reflection or transmission by the imaging beam while respectively the fixation lamp beam is transmitted or reflected, respectively;
focusing adjustment means placed between the optical-splitter and the transverse scanning means, to simultaneously maintain the input aperture of the interferometer and the aperture of the confocal optical receiver in focus, while focusing the scanned beam on the object;
optionally means to introduce intensity or phase modulation or intensity modulation and phase modulation in the said OCT interferometer;
analysing means, coupled to the raster scanning means, for demodulating the photodetected signals of the photodetectors in the interferometer and confocal optical receiver;
optionally depth adjustment means for altering the optical path difference in said OCT interferometer, over a predetermined amount for at least one point in the raster in either steps or continuously at a pace synchronised with the focusing adjustment means, according to a synchronising procedure;
displaying means for processing and generating an image created by the interferometer and an image created by the confocal optical receiver for the simultaneous display of the said respective images created by the interferometer and the confocal optical receiver, which images are synchronised with the transverse scanning means;
optionally timing means which control two main operation regimes, namely (i) en-face imaging when the mapping apparatus acquires transverse images in a plane perpendicular on the optic axis (or in the patient face) at constant depth for different depths and (ii) longitudinal imaging when the mapping apparatus acquires longitudinal images containing the optic axis (or perpendicular to the patient face).
In a preferred feature, the optical mapping apparatus is as described hereinabove wherein said confocal optical receiver is part of a block CE, which consists of at least one confocal optical receiver with or without adjustable depth resolution and optionally, at least one excitation source to excite fluorescence or Raman radiation from the object, whole the aperture of the block CE is optically conjugate to the apertures of the confocal optical receiver and of the excitation source; and wherein:
said optical splitter, shared by both the interferometer of the OCT and the block CE, directs some of the light returned from an object situated at an object location adjacent to the optical mapping apparatus, wherein, the OCT channel uses the optical-splitter in reflection and the block CE in transmission (R-OCT/T-CE), or wherein the OCT channel uses the optical-splitter in transmission and the CE block uses the optical splitter in reflection (R-OCT/R-CE);
said interface optics transfers an optical beam from the transverse scanning means to the object, and an optical output beam reflected and scattered from the object back to the optical-splitter through the transverse scanning means, and, from the optical-splitter to the interferometer of the OCT channel and to the block CE in a selected ratio, which ratio is determined by the optical splitter used and the wavelength of the radiation backscattered or emitted by the object; and
said focusing adjustment means is placed between the optical-splitter and the transverse scanning means, to simultaneously maintain the input aperture of the interferometer and the aperture of the CE block in focus, while focusing the scanned beam on the object.
Further, the optical mapping apparatus is preferably one wherein said optical radiation source is made out of two optical sources of different wavelengths which are combined by a fiber directional single mode coupler or a bulk beam-splitter;
said depth adjustment means alters the focus, over a predetermined amount for at least one point in a raster in either steps or continuously at a pace synchronised with the focusing adjustment, according to a synchronising procedure;
said displaying means for generating and processing the images created by the confocal optical receivers, is synchronised with the transverse scanning means, wherein a line in the image corresponds to the line scanner movement and the advance of said line to the completion of the area scanned corresponds to the movement of the frame scanner; and
said timing means controls the 3D scanning operation regime, when the mapping apparatus acquires en-face images in a plane perpendicular on the optic axis (or in the patient face) at different focusing depths.
In a further preferred feature, the transverse scanning means comprises a line scanner and a frame scanner, and still further, wherein a line in an object corresponds to the line scanner movement and the advance of the line to the completion of the area scanned corresponds to the movement of frame scanner. Still more preferably, the analysing means is coupled to the transverse scanning means.
The optical radiation source is preferably a low coherence source, or a source with adjustable coherence length.
Further, it is preferred that the depth adjustment means and the focusing adjustment means use synchronised PC controlling means, with independent initial position, velocity and acceleration and deceleration, which can be controlled continuously or in a stepwise manner.
Further, in one preferred embodiment, the present invention provides an optical mapping apparatus which comprises:
an optical coherence tomography (OCT) system built around an in-fiber or a bulk interferometer excited by an optical radiation source;
transverse scanning means consisting from a line scanner and a frame scanner to effect transverse scanning of the object using an optical output from the optical splitter (as an imaging beam), over a line or a predetermined area in the object;
interface optics for transferring an optical beam from the transverse scanning means to the object, and for transferring an optical output beam reflected and scattered from the object back to the OCT system;
optionally a fixation lamp for sending light from an external source towards the object;
optionally, an interface optics-splitter shared by the optional fixation lamp beam and the imaging beam, wherein the interface optics-splitter can be used either in reflection or transmission by the imaging beam, while the fixation lamp beam is transmitted or reflected, respectively;
focusing adjustment means placed between the output of the OCT system and the transverse scanning means, to maintain the input aperture of the interferometer in focus, while focusing the scanned beam on the object;
optionally means to introduce intensity or phase modulation or intensity modulation and phase modulation in the OCT interferometer;
analysing means, coupled to the transverse scanning means, for demodulating the photodetected signals of the photodetectors in the interferometer;
depth adjustment means for altering the optical path difference in said OCT interferometer over a predetermined amount for at least one point in the transverse scanning means in either steps or continuously at a pace synchronised with the focusing adjustment means, according to a synchronising procedure;
displaying means for generating and processing the image created by the interferometer synchronised with the transverse scanning means, where the line in the image corresponds to the line scanner movement and the advance of the line to the completion of the area scanned corresponds to the movement of the frame scanner;
optionally timing means which control two main operation regimes, namely (i) en-face imaging when the mapping apparatus acquires transverse images in a perpendicular plane at constant depth and (ii) longitudinal imaging when the mapping apparatus acquires longitudinal images in a parallel plane.
In a further aspect, the present invention also provides a method of preparing a dual channel image of an object, which method utilizes an optical mapping apparatus as described hereinabove with respect to the present invention, or as described hereinbelow.
In a still further aspect, the present invention also provides for the use of the apparatus described hereinabove with respect to the present invention.

Optical mapping apparatus with adjustable depth resolution and multiple functionality