A method for inhibiting scale comprises adding to a fluid that causes scale formation a polycarboxylic acid or a salt thereof which has a star structure and at least 5 arms. A star polymer comprising a core based on 2,2′-[Oxybis(methylene)]bis[2-(hydroxymethyl)-1,3-propanediol] and 6 arms comprising linear polycarboxylic acids of degree of polymerization (DP) of the arm of at least 2 and in some embodiments up to 15 or more is useful in inhibiting scale formation.

The accumulation of unwanted deposits (mineral scales, corrosive products, etc.) occurs in the majority of industrial processes where equipment surfaces are in contact with untreated water. These deposit build-ups can cause operational problems, such as blocking of pipes and pumps, increased running costs, and ultimately equipment failure.
For example, in oilfield applications precipitation of inorganic salts, such as calcium carbonate, calcium sulfate, barium sulfate or strontium sulfate, from aqueous fluids to form scale is a persistent and common problem during operations to recover hydrocarbons from subterranean formations. Water flooding is the most widely used technique to recover oil from oil-bearing subterranean formations. The technique involves injecting water into the formation to drive oil therein toward a production system composed of one or more wells through which the oil is recovered. The injection water may be produced water or seawater. Seawater, which is readily available in offshore operations, is typically used for the injection water in the water flooding operation. Seawater contains large amounts of dissolved salts such as sulfate. Therefore, sulfate scales are formed when seawater is mixed with formation water. The carbonate scales are primarily generated in the near wellbore/wellbore region due to the pressure drop. Carbon dioxide is frequently introduced into the formations during enhanced oil recovery operations, resulting in absorption of carbon dioxide into aqueous fluids. As aqueous fluids enter the wellbore during production, a reduction in pressure causes the absorbed carbon dioxide to flash out of the aqueous fluids to gas phase. This increases the pH of aqueous fluids and causes growth of carbonate scales in the near wellbore/wellbore region. Furthermore, water encountered in oilfield operations contains low solubility salts. Under certain conditions, these sparingly soluble salts may precipitate out of water resulting in scale formation on various surfaces of the oil recovery system such as walls of pipework, heat exchanger surfaces, valves, and vessels. The scale can block the perforations in the casing, production tubing, downhole pumps and the formation in either the production well or injection wells. Additionally, scale can block the near wellbore region matrix permeability and micro fissures. Scale formation affects heat transfer, interferes with fluid flow, facilitates corrosion and harbors bacteria. In oilfield piping and tubing, scale can cause restriction to flow and high friction loss. Furthermore, the oil production rate declines steadily as the scale forms. To restore the oil production rate, various methods have been used.
In other industrial applications, the emphasis placed on water conservation has made it necessary for industrial water systems to operate at higher concentrations and for extended periods, increasing the potential for deposit accumulation. As a result of this, there is still a significant commercial demand for new and improved additives to control scaling, corrosion, and biofouling.
Polymers derived from ethylenically unsaturated carboxylic acids (e.g. polyacrylic acids) or their salts are one class of scale inhibitors that are used in industrial applications, including oilfield applications, where equipment is subject to fouling from scale growth. For example, U.S. Pat. No. 5,032,646A discloses copolymers of methacrylic acid and itaconic acid for scale inhibition.
There remains a desire for new scale inhibitors, particularly those that are effective at lower application levels.

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA


A power limiter for a switched mode power supply includes an operational amplifier and a comparator circuit. The operational amplifier is configured to receive an input voltage supplied to the SMPS as a first input and a reference voltage as a second input. The comparator circuit is configured to receive an output of the operational amplifier, receive a current sense signal, and generate an output signal configured to control a power generator. The output signal is based on a comparison between the output of the operational amplifier and the current sense signal.

An SMPS actively regulates its output voltage by switching the output on and off in a duty cycle. The output of the SMPS may be given by the relative duration of the on and off portions of the duty cycle. This may be in contrast to linear power supplies, wherein power is dissipated in, for example, a transistor. SMPSs may be implemented as, for example, buck converters, boost converters, or buck-boost converters. An SMPS may regulate output voltage or current by switching ideal storage elements such as inductors and capacitors into and out of different electrical configurations. If a power source, an inductor, a switch, and the corresponding electrical ground are placed in series and the switch is driven by a square wave, the peak-to-peak voltage of the waveform measured across the switch can exceed the input voltage from the DC source. This is because the inductor responds to changes in current by inducing its own voltage to counter the change in current, and this voltage adds to the source voltage while the switch is open. If a diode-and-capacitor combination is placed in parallel to the switch, the peak voltage can be stored in the capacitor, and the capacitor can be used as a DC source with an output voltage greater than the DC voltage driving the circuit. This boost converter acts like a step-up transformer for DC signals. A buck-boost converter works in a similar manner, but yields an output voltage which is opposite in polarity to the input voltage. Other buck circuits exist to boost the average output current with a reduction of voltage. In an SMPS, the output current flow depends on the input power signal, the storage elements and circuit topologies used, and also on the modulation and duty cycle to drive the switching elements. The spectral density of these switching waveforms has energy concentrated at relatively high frequencies. As such, switching transients and ripple introduced onto the output waveforms can be filtered with a small LC filter.


The present invention provides a method for treating hypertension in insulin resistant patients comprising the administration of an insulin sensitizing agent, particularly ciglitazone or pioglitazone.

The present invention provides a new use of known pharmaceutical compounds. In particular, the present invention provides for the treatment of hypertension with certain insulin sensitizing agents such as thiazolidinedione derivatives. These compounds are previously known for the treatment of diabetes.
The fact that there was a relationship between circulating insulin and hypertension has been frequently discussed in the literature. Thus, for example, Pereda, et al, Am. J. Physiol. 202 (2): 249-252 (1962) noted an increase in blood pressure in dogs due to the administration of insulin. DeFronzo, Diabetologia 21:165-171 (1981) attributed this increase in hypertension to the effect of insulin on renal sodium retention which expanded the vascular volume, while Rowe, et al, Diabetes 30:219-225 (March 1981) attributed it to the increased activity of the sympathetic nervous system. Other studies have suggested that hyperinsulinemia as the result of insulin resistance is associated with hypertension. This is attributed to the fact that obesity is known to be associated with insulin resistance and it is a commonly held view that hyperinsulinemia in obesity is a major factor responsible for hypertension. See, e.g., Modan, et al, J. Clin. Invest. 75:809-817 (March 1985). Patients with essential hypertension have been reported to have insulin resistance. Ferrannini, et al, N. Eng. J. Med. 317:350-7 (1987). In the last study a measure of insulin resistance was reported to directly correlate with arterial blood pressure. In patients with a functional endocrine pancreas, insulin resistance also correlates directly with circulating insulin levels.
Ciglitazone is characteristic of a new class of thiazolidine antidiabetic agents which lower blood glucose in animal models of noninsulin diabetes mellitus (NIDDM), while actually reducing circulating concentrations of insulin. This is believed to be accomplished by improving the responsiveness of the peripheral tissues to insulin. See, e.g., Chang, et al, Diabetes 32:830-838 (September 1983).
Because of the high association between diabetes, obesity, and hypertension, and the increase in risk of heart attack in patients exhibiting both diabetes and hypertension (see, e.g., Tzagournis, Am. J. Med., 86 (suppl 1B):50-54 (1989)), what is needed in the art is an agent which will treat both diabetes and hypertension.

Use of insulin sensitizing agents to treat hypertension


Stain-resistant, polyamide textile substrates treated with compositions comprising hydrolyzed ethylenically unsaturated aromatic/maleic anhydride polymers and processes for their preparation. The treated substrates possess stain resistance that is as good as or better than do previously known stain-resist treated substrates but do not suffer from yellowing to the extent that previously known treated substrates do.

Polyamide substrates, such as nylon carpeting, upholstery fabric and the like, are subject to staining by a variety of agents, e.g., foods and beverages. An especially troublesome staining agent is FD&C Red Dye No. 40, commonly found in soft drink preparations. Different types of treatments have been proposed to deal with staining problems. One approach is to apply a highly fluorinated polymer to the substrate. Another is to use a composition containing a sulfonated phenol-formaldehyde condensation product.
For example, Liss and Beck, in U.S. Pat. Application Ser. No. 124,866, filed Nov. 23, 1987, disclose stain-resistant synthetic polyamide textile substrates having modified sulfonated phenolformaldehyde polymeric condensation products. However, sulfonated phenol-formaldehyde condenation products are themselves subject to discoloration; commonly they turn yellow. Yellowing problems are described by W. H. Hemmpel in a Mar. 19, 1982 article in America's Textiles, entitled Reversible Yellowinq Not Finisher's Fault. Hemmpel attributes yellowing to exposure of a phenol-based finish to nitrogen oxides and/or ultraviolet radiation. Critchley et al., Heat Resistant Polymers; Technoloqically Useful Materials, Plenum Press, N.Y. 1983, state that the thermo-oxidative stability of phenol-formaldehyde condensation products can be improved by etherifying or esterifying the phenolic hydroxyl groups.
To deal with the yellowing problem, Marshall, in U.S. Pat. No. 4,833,009 removes color-formers by dissolving the condensation product in aqueous base, acidifying the solution to form a slurry, heating the slurry so as to cause phase separation, recovering water-insoluble material and dissolving the water-insoluble material in aqueous base. On the other hand, Liss and Beck, in their aforesaid application, remove color-formers by acylating or etherifying some of the phenolic hydroxyls of the condensation product, and in a preferred embodiment, dissolving the modified condensation product in a hydroxy-containing solvent, such as ethylene glycol, prior to its being applied to the textile substrate.
Allen et al., in U.S. Pat. No. 3,835,071, disclose rug shampoo compositions which upon drying leave very brittle, non-tacky residues which are easily removed when dry. The compositions comprise water-soluble metal, ammonium or amine salt of a styrene-maleic anhydride copolymer, or its half ester, and a detergent. Water-soluble metal salts of Group II and the alkali metals (particularly magnesium and sodium) are preferred and ammonium salts are most peeferred by Allen et al.

Stain-resistant aromatic/maleic anhydride polymers


A method for operating an electronic device, comprising a plurality of displays, which includes a first body unit, a second body unit, a first display which is disposed on the other side of the first body unit and faces a first direction, a second display which is disposed on the other side of the second body unit and faces a second direction, and a processor configured to display on the first display a screen of a first application and, when the angle between the first body unit and the second body unit is smaller than a predetermined angle, display on the second display at least one of an image related to the first application, an image related to first content being executed by means of the first application and an image related to information obtained by means of the electronic device.

Electronic devices are capable of displaying various information and contents on displays thereof and receiving various inputs through the displays. In this way, the display of the electronic device functions as an input means that receive an input as well as a display means that displays a screen.
Recently, a larger-size and higher-definition display has been employed, and to further improve design aspects or utilization of the electronic device, various forms of displays have been employed in the electronic device.
Moreover, as the portability of the electronic device has been emphasized in recent times, users are able to use the electronic device in various locations and places, such that the electronic device has been developed in various forms that make it more convenient for the user to use the electronic device.

Electronic device comprising plurality of displays and method for operating same


Examples described herein relate to a blockchain Internet-of-Things (IoT) system. The blockchain IoT system include a blockchain IoT device that generates event data and attests the event data using a decentralized identity provisioned to the blockchain IoT device. The blockchain IoT system further includes a blockchain network coupled to the blockchain IoT device via a network. The blockchain network includes a blockchain IoT management sub-system to receive the event data from the blockchain IoT device, verify the decentralized identity associated with the blockchain IoT device, and upon successful verification of the decentralized identity, process the event data. The blockchain network also includes a blockchain ledger sub-system to verify the processed event data and, upon successful verification of the processed event data, store the processed event data in a distributed ledger.

Generally, "Internet-of-Things" (IoT) refers to the interconnection of devices within a local and/or wide area network infrastructure, including the Internet. The IoT enables a wide-range of applications in which virtually any type of physical thing may provide information about itself or its surroundings and/or may be controlled remotely via client devices.
It is emphasized that, in the drawings, various features are not drawn to scale. In fact, in the drawings, the dimensions of the various features have been arbitrarily increased or reduced for clarity of discussion.

Blockchain internet-of-things system and related method

Hewlett Packard Enterprise Development LP


A solvent comprising 40 to 100 wt % of 1,3-dioxolane and 0 to 60 wt % of tetrahydrofuran, wherein the solvent further comprises 30 ppm to 800 ppm of an antioxidant, based on the total weight of the solvent, provides a long shelf life with good adhesive strength even after exposure to air. The solvent can be effectively used for labeling of heat-shrinkable polyester-based labels.

Heat-shrinkable polyester-based films have been widely used for packaging and labeling of beverage containers (e.g., PET bottles) and other types of containers due to their heat-shrinkable characteristics. Conventionally, in order to label an ordinary beverage container with a cylindrical shape, a polyester-based film is cut into certain sizes and rolled into a cylindrical form. After both ends of the film are glued with an adhesive solvent, the cylindrical film is put around the container and then shrunk. For performing effective labeling, not only the characteristics of the heat-shrinkable polyester-based film are of great importance but also the characteristics of the adhesive solvent.
Conventionally, such solvents as chloroform, 1-methyl-2-pyrrolidinone, tetrahydrofuran (THF), and 1,3-dioxolane have been widely used as adhesive solvents for heat-shrinkable polyester-based labels. However, the use of chloroform is restricted because of its carcinogenicity; and 1-methyl-2-pyrrolidinone is not preferred due to its strong and unpleasant odor. Hence, THF and 1,3-dioxolane have been used singly or as a mixture thereof. However, as THF and 1,3-dioxolane are prone to oxidation to form peroxides, a long-term storage after exposure to air may lead to a decrease in their solubility, which would eventually bring about defects in the adhesion of the labels. As a result, heat-shrinkable film manufacturers have always had to use fresh solvents to secure consistent adhesive strength, suffering difficulties in the storage of solvents.
Therefore, it is necessary to develop a novel solvent for heat-shrinkable polyester-based labels, which has a long shelf life with consistent adhesive strength and excellent storage stability.

Solvent for heat-shrinkable polyester-based labels


A method and structure for providing uniform, large-area graphene by way of a transfer-free, direct-growth process. In some embodiments, a SAM is used as a carbon source for direct graphene synthesis on a substrate. For example, a SAM is formed on an insulating surface, and a metal layer is formed over the SAM. The metal layer may serve as a catalytic metal, whereby the SAM is converted to graphene following an annealing process. The SAM is deposited using a VPD process (e.g., an ALD process and/or an MLD process). In some embodiments, a CNT having a controlled diameter may be formed on the surface of a nanorod by appropriately tuning the geometry of the nanorod. Additionally, in some embodiments, a curved graphene transistor may be formed over a curved oxide surface, thereby providing a band gap in a channel region of the graphene transistor.

The electronics industry has experienced an ever increasing demand for smaller and faster electronic devices which are simultaneously able to support a greater number of increasingly complex and sophisticated functions. Accordingly, there is a continuing trend in the semiconductor industry to manufacture low-cost, high-performance, and low-power integrated circuits (ICs). Thus far these goals have been achieved in large part by scaling down semiconductor IC dimensions (e.g., minimum feature size) and thereby improving production efficiency and lowering associated costs. However, such scaling has also introduced increased complexity to the semiconductor manufacturing process. Thus, the realization of continued advances in semiconductor ICs and devices calls for similar advances in semiconductor manufacturing processes and technology.
Graphene, a two-dimensional (2-D) sheet of carbon atoms bonded to one another in a hexagonal crystal lattice, has recently been introduced as a potential replacement channel material for transistor devices. In addition to its high intrinsic mobility, graphene has attracted great interest for its other unique properties such as large current densities, thermodynamic and mechanical stability, and high saturation velocity, among others. Graphene films have often been obtained by mechanical exfoliation (e.g., from a bulk graphite source), but mechanical exfoliation results in graphene films that are small (e.g., tens of microns) and non-scalable. Large-area graphene films have been produced by methods such as epitaxial growth on silicon carbide (SiC) substrates and chemical vapor deposition (CVD)-growth (e.g., involving the catalyzed decomposition of hydrocarbons on a metal surface), but such methods also have drawbacks (e.g., high-cost of SiC substrates and high processing temperature for SiC epitaxial growth). Regardless of the technique used for producing graphene films, the fabrication of graphene-based devices generally involves transfer of a graphene layer (e.g., from a growth substrate or from the bulk graphite source), and onto a target substrate upon which the graphene-based device will be fabricated. As a result of the transfer process, grain boundaries, point defects, wrinkles, folds, tears, cracks, impurities, or other defects may be introduced into the transferred graphene layer and thereby detrimentally affect the properties of any subsequently fabricated devices. Thus, existing techniques have not proved entirely satisfactory in all respects.

Methods of graphene growth and related structures

Taiwan Semiconductor Manufacturing Co., Ltd.


A mixing device for fluids, comprising a column within which there is an internal core, a space between the column and core defining a channel for the flow of the fluids, the surface of the column facing the core having fluid guide elements which impart helical flow in a first twist direction upon a fluid flowing along the channel, the surface of the core having fluid guide elements thereon which impart helical flow in an opposite twist direction upon the fluid. On part of the channel, the helical flow imparted to the fluid is predominantly in the twist direction of the elements on the core and on a part of the channel upstream or downstream of this part the helical flow imparted to the fluid is predominantly in the twist direction of the elements on the column.

Various mixing devices for fluid materials are known. One general type of mixing device comprises a generally tubular column along which the two or more fluid materials are caused to flow together, the tubular column having internal turbulence-creating elements which engage with and cause turbulence in the flow of fluid materials along the column. The turbulence causes the materials to mix thoroughly. One such mixing device is disclosed in U.S. Pat. No. 4,767,026, which comprises a tubular column within which are a number of baffles in the form of helically twisted ribbons, the ribbons alternating in their direction of helical twist along the length of the column. The mixing device of U.S. Pat. No. 4,767,026 is disclosed in combination with a dispensing device for two fluid materials. Another such mixing device is disclosed in EP 0212290 A which comprises a cylindrical passage tube provided with a groove on its inner peripheral wall and a shaft with a helical groove on its outer peripheral surface. The grooves on the shaft and the passage tube are of unchanging depth along the length of the tube.
Known mixing devices are inadequate for the thorough mixing of certain materials, e.g. medicinal or other healthcare formulations which comprise two or more fluid materials each of which contain substances which are intended to interact on mixing to form a product.
It is an object of this invention to overcome this problem, in part at least, and also to provide an alternative to known mixing devices. It is also an object of the present invention to provide a mixing device which is suitable for use with the type of small volume hand operated dispensing devices often used for healthcare products, such as toothpastes, gels etc. These generally comprise a number of reservoirs for the respective substances each reservoir communicating with a hand operated pump which pumps the substance through a respective communicating dispensing outlet. Such dispensing devices are well known, for example in U.S. Pat. Nos. 5,104,004 and 4,438,871 among many others. Other objects and advantages of the present invention will be apparent from the following description.

SmithKline Beecham Consumer Healthcare GmbH


A sensor using thermally emissive materials for chemical spectroscopy analysis includes an emissive material, wherein the emissive material includes the thermally emissive materials which emit electromagnetic radiation, wherein the electromagnetic radiation is modified due to chemical composition in an environment; and a detector adapted to detect the electromagnetic radiation, wherein the electromagnetic radiation is indicative of the chemical interaction changes and hence chemical composition and/or chemical composition changes of the environment. The emissive material can be utilized with an optical fiber sensor, with the optical fiber sensor operating without the emissive material probed with a light source external to the material.

There is an existing need for sensors and monitoring schemes for high temperature and harsh environments to address a broad range of applications such as, for example, fossil-based power generation, industrial manufacturing, aerospace/aviation, and the like. Some specific applications for such sensors and spectroscopic techniques include advanced combustion, solid oxide fuel cells, gas turbines, boiler systems, chemical looping, etc. A common need in all cases is the ability to monitor critical process parameters under in-situ conditions which may involve temperatures ranging from, but not limited to, 500-1500° C. (as well as different temperature ranges) depending upon the application of interest. Hydrogen-based energy generation systems such as solid oxide fuel cells are attractive alternatives to conventional thermal based power generation such as through coal combustion, for example, due to their relatively low environmental impact and the potential for higher efficiencies. However, there is a definite lack of sensors that can provide fast in-situ systemic hydrogen utilization feedback at high temperatures such as above 500° C. Although, in general, any temperature can be viable for emissivity monitoring, and is only limited by the availability of detectors and the thermal emission profile of the material in question, which would dictate the choice of the material constituents. Therefore, the proposed method can be ubiquitous across a large span of temperatures.
Optical-based sensing methodologies have emerged as a superior technology for harsh environment sensing due to a number of associated advantages relative to more traditional electrochemical and electrical-based sensing approaches. Such advantages include the lack of electrical wiring or components at the sensing location, mitigated risk of electrical sparking in flammable gas environments, and the ability to perform broad/multiple wavelength and/or distributed interrogation of sensor devices and materials, as material interactions with light provide a much richer parameter space. Although optical-based sensing methodologies have a number of inherent advantages, a key weakness is often the need for an optical light source which can be costly and in some cases can present inherent instabilities over time that must be addressed. While relatively low-cost solutions do exist such as inexpensive halogen sources and photodiodes, it would be advantageous to eliminate the need for a light source to greatly simplify the optical sensor design and to reduce overall costs.
Thermal emission enhancement and thermal spectra tailoring have been observed in a variety of materials some of which are micro/nanostructured, heavily doped semiconductors, rare earth doped, quantum dots embedded, and in tandem with nano-gaps to extract the extraordinary near-field thermal emissions. While these techniques can greatly improve on the overall thermal emission and address desired aspects such as spectral specificity using up-conversion, photonic-bandgaps, and isolated decay channels for application such as in Thermophotovoltaic (TPV) systems, it has not previously been demonstrated that the thermal emission of a material can be significantly altered by changes in the gaseous chemistry of its environment at elevated temperatures. Aside from the basic considerations outlined in the well-known Kirchoff's relationship between emissivity and absorptivity of matter in thermal equilibrium, the current thermodynamic literature does not discuss how the microscopic material constituents are related to variations in thermal emission and how this may be affected by changes in the chemical constituents of complicated environments that exist in many systems such as in energy conversion applications. For example, a Thermophotovoltaic or Thermoelectric system could also see an efficiency enhancement due to placement of the system or some portion of the system in a chemical environment altering the system's chemical, physical, or electrical property, as contemplated for spectroscopic applications.

Thermally emissive sensing materials for chemical spectroscopy analysis


Disclosed is a radiographic apparatus including a detachable manipulation panel which includes a capturing device to generate X-rays and to irradiate the X-rays to a subject so as to capture the subject, a controller connected to the capturing device to control the capturing device, and a manipulation device mounted to the capturing device to allow an inspector to input commands to control the capturing device, wherein the manipulation device is detachably mounted to the capturing device and, in a state in which the manipulation device is separated from the capturing device, is connected to the controller using a wireless interface to control the capturing device.

1. Field of the Invention
The present invention relates to a radiographic apparatus including a detachable manipulation panel.
2. Description of the Related Art
A radiographic apparatus is an apparatus that acquires images of the inner parts of a human body using X-rays. The radiographic apparatus is used to inspect bodily injuries or diseases in the inner parts of the human body which are not viewable from the exterior. The radiographic apparatus radiates X-rays towards the head or chest of the human body and then detects the X-rays transmitted through the head or chest of the human body to acquire images of the inner parts of the human body.
The radiographic apparatus includes an X-ray tube to radiate X-rays toward a region to be captured, a high voltage generator to generate high voltage to generate X-rays, and a shifter to shift the position and/or direction of the X-ray radiation. Also, the radiographic apparatus includes a manipulation device to allow an inspector (i.e., the operator of the radiographic apparatus) to perform manipulation to control the above devices.
Generally, the manipulation device includes a display unit to display a state of the radiographic apparatus and an input unit to allow an inspector to input commands. The manipulation device is provided in the form of a panel.
The manipulation device is fixedly mounted to one of the components which constitute the radiographic apparatus. Consequently, it may be necessary for an inspector to access the component of the radiographic apparatus to which the manipulation device is mounted. The component of the radiographic apparatus to which the manipulation device is mounted may be shifted to change the position and/or direction of the X-ray radiation with the result that the manipulation device may be beyond the inspector's reach or may be located where manipulation of the manipulation device by the inspector is difficult.


Bandwidth of a test channel is determined from a single port Time Domain Reflectometer (TDR) measurement with the channel terminated in a short or an open circuit. Bandwidth is estimated by: (1) making a TDR measurement of a channel terminated in a short or open circuit; (2) determining a maximum slope of the reflection from the TDR measurement; (3) calculating an interpolated rise or fall time, for example by taking 80% of the applied voltage between the 10% and 90% points, and then dividing the applied voltage by the maximum slope determined; (4) dividing the overall interpolated rise time by the square root of two to account for the TDR signal proceeding through the channel twice; (5) removing the contribution of rise time from measurement equipment; and (6) completing calculation of channel bandwidth using a formula to relate bandwidth to rise time, such as: bandwidth=0.35/rise time.

1. Technical Field
The present invention relates in general to a method of measuring the bandwidth of a signal channel that carries an electrical signal. More particularly, the present invention relates to a single port measurement method to determine the bandwidth of a test signal channel of a wafer test system, the channel being provided through a probe card, where the probe card is used to test integrated circuits (ICs) on a wafer.
2. Related Art
A wafer test system includes a number of test channels for carrying test signals to and from ICs on a wafer. Bandwidth testing of the probe card or test interface is performed to assure the integrity and frequency response of the test interface. Many test systems employ Time Domain Reflectometry (TDR) to measure and calibrate the path delay of the interface to the Device Under Test (DUT) when the interface is open circuit or otherwise not in contact with the DUT. As presently deployed however, the TDR measurement does not directly give an indication of the channel Bandwidth. Direct use of the reflected signal rise time is not practical because impedance mismatches and discontinuities in the interface create reflections and amplitude variations that adversely affect the true bandwidth measurement.
FIG. 1 shows a block diagram of a test system using a probe card for testing ICs on a semiconductor wafer. The test system includes a test controller 4 connected by a communication cable 6 to a test head 8. The test system further includes a prober 10 made up of a stage 12 for mounting a wafer 14 being tested, the stage 12 being movable to contact the wafer 14 with probes 16 on a probe card 18. The prober 10 includes the probe card 18 supporting probes 16 which contact ICs formed on the wafer 14.
In the test system, test data is generated by the test controller 4 and transmitted on individual test channels through the communication cable 6, test head 8, connectors 24, probe card 18, probes 16 and ultimately to ICs on the wafer 14. The probe card 18 serves to link each channel to a separate one of the probes 16. Test results are then provided from ICs on the wafer back through the probe card 18 to the test head 8 for transmission back to the test controller 4. Once testing is complete, the wafer is diced up to separate the ICs.
FIG. 2 is a cross sectional view showing details of typical components of the probe card 18. The probe card 18 is configured to provide both electrical pathways and mechanical support for test channels connecting through probes 16 to contact ICs on a wafer. The probe card electrical pathways are provided through a printed circuit board (PCB) 30, an interposer 32, and a space transformer 34. Channels from the test head 8 are directed to individual pins of multi-pin connectors 24 typically connected around the periphery of the PCB 30. Traces 40 then continue the channels paths from connectors 24 through the PCB 30 to contact pads on the opposing side of the PCB 30 spaced to match the routing pitch of pads on the space transformer 34. The interposer 32 includes a substrate 42 with spring probe electrical contacts 44 disposed on both sides. The interposer 32 continues to provide the channel paths from the pads on the PCB 30 to contact pads on a space transformer 34. Traces 46 in the space transformer 34 distribute or "space transform" the channel lines from the interposer to spring probes 16 configured in an array. The space transformer 34 with embedded traces and connected probes is referred to as a probe head.
Mechanical support for the electrical components is provided by a back plate 50, bracket 52, frame 54, leaf springs 56, and leveling pins 62. The back plate 50 is connected by screws 59 to the bracket 52 and PCB 30. The leaf springs 56 are attached by screws 58 to the bracket 52. The leaf springs 56 extend to movably hold the frame 54 within the interior walls of the bracket 52. The frame 54 then supports the space transformer 34. Leveling pins 62 complete the mechanical support, and are adjusted so that brass spheres 66 provide a point contact with the space transformer 34. Leveling pins 62 are adjustable to level the space transformer 34 and assure all the probes 16 will make contact with a wafer.
Although FIG. 1 provides an exemplary wafer test system configuration, it is contemplated that other test systems may be served by the present invention. For instance, the probe interface might be replaced with one or more sockets for testing of packaged or bare devices. Such test board systems for testing singulated devices are often referred to as "load boards". Similarly, although FIG. 2 illustrates one configuration for connecting test channels of a wafer test system to contacts that can connect to ICs on a wafer, other configurations for channels can be provided. For example, although probes 16 are shown as wire type spring probes, other electrical contacts such as pogo pins, cobra probes, lithographically formed spring probes, or conductive bumps might be used. Similarly, the interposer 32 can be replaced with wire bonds or a removable connector. For convenience, components of the overall test system of FIG. 1 and probe card of FIG. 2 will be referenced subsequently.
After manufacture of a probe card, testing is performed to determine the electrical and mechanical properties of the probe card. Signal integrity testing provides a determination of operation bandwidth specifications of the probe card channels, as well as the detection of both hard (manufacturing) and soft (design) errors in the test interface.
FIG. 3 illustrates a typical test configuration of test system components to determine the bandwidth of individual channels. As shown, the test components include a test system analyzer 70, which may be the tester system 4 of FIG. 1 itself, or a separate testing device such as a vector network analyzer (VNA) used to determine the S parameters of a system. A first port 72 of the test system analyzer 70 is connected to at least one test channel in the cable 6 that is provided through test head 8 (as illustrated by line 73). The test channel then proceeds through probe card 18 and one of its probes 16 to one of a number of pads 74 on a PCB 76. The PCB 76 is specifically created for calibration of the probe card 18 and includes pads 74 for connection of channels back through the test system analyzer through a cable 77. The cable 77 is connected back to a second port 78 of the test system analyzer 70. The through path between the first and second ports 72 and 78 of the test system analyzer enable a signal to be transmitted to determine parameters of the test system.
Measurement of a test signal using the test setup of FIG. 3 enables a simple determination of bandwidth. Bandwidth is specified as the frequency at which a sinusoidal input signal voltage is attenuated to 70.7% of its original amplitude, also known as the −3 dB or half power point. FIG. 4 shows a measured response for a 100 MHz test channel line.
Another way to indirectly measure bandwidth of a channel is to measure the rise time of a signal through the channel and correlate the rise time to bandwidth. One measure of the rise time of an input signal is the time for a signal to transition from 10% to 90% of the maximum signal amplitude. With the 10% to 90% rise time, bandwidth can be calculated using the formula: bandwidth×rise time=0.35. Thus the bandwidth measured is defined as: bandwidth=0.35/(Tr10-90), where the measured rise time from 10% to 90% is labeled (Tr10-90). Determination of bandwidth using a 10% to 90% rise time measurement is illustrated in FIG. 5.
Bandwidth can be determined from a rise time over a smaller portion of a signal transition, such as a 20% to 80% range. For a 20% to 80% rise time, bandwidth is typically calculated using the formula: bandwidth×rise time=0.22. Thus, for measurements based on a 20% to 80% rise time, the bandwidth is defined as: bandwidth=0.22/(Tr20-80), where the measured rise time is labeled (Tr20-80).
It is also well known that the overall rise time of a system labeled (Toa) is the square root of the sum of the squares of the individual component rise times (T1, T2, . . . ) represented as follows:Toa=√{square root over (T12+T22+T32)}To isolate the bandwidth measurement of the probe card alone, test measurements can be made to determine the rise time through components without the probe card 18 between the test ports of the calibration device 70. The equation for Toa shown above can then be used to separate out the rise time measurement of the probe card from the overall rise time Toa.
Due to changes in the channel bandwidth after multiple contacts of the test probes to ICs on wafers, it may be desirable to verify that the bandwidth of each channel is meeting specification before the probe card is used to test DUT specifications. With the probe card installed in a test system for testing ICs on wafers, it is typically inconvenient to reconfigure the test system to provide a two port measurement setup as shown in FIG. 3 to enable bandwidth verification for all channels of the probe card or DUT interface. It would be desirable to provide a more convenient method for determining the bandwidth of the individual channels of the test system.

Method of estimating channel bandwidth from a time domain reflectometer (TDR) measurement using rise time and maximum slope


Compressive force transmitting connection element for connecting a first cast structural component part to a second cast structural component part having an insulation body for thermal separation of the first and second cast structural component parts situated above and below the compressive force transmitting connection element. This insulation body being limited on the top and bottom by two support surfaces. At least one compression element penetrating the insulation body from the first to the second support surface. Transmitting transverse force elements have at least one transverse force transmitting element which continuously runs through the compressive force transmitting connection element in direction from the first support surface to the second support surface, the at least one compression element encloses the at least one transverse force transmitting element over at least part of the circumference thereof.

1. Field of the Invention
The present invention is directed to a compressive force transmitting connection element suitable for the compressive force transmitting connection of a first cast structural component part to a second cast structural component part. A connection element of this kind generically comprises: an insulation body (31) for thermal separation of the first cast structural component part (13, 29) from the second cast structural component part (15), this insulation body (31) being limited by two oppositely located support surfaces (39, 41), wherein the first support surface (39) limiting the insulation body (31) faces the first cast structural component part (13, 29), and wherein the second support surface (41) limiting the insulation body (31) faces the second cast structural component part (15), at least one compression element (33) penetrating the insulation body (31) from the first support surface (39) thereof to the second support surface (41) thereof, and an element for transmitting transverse force.
2. Description of the Related Art
A heat insulating masonry unit is known from EP 2 151 531 A2. The compression elements of this heat insulating masonry unit are constructed from cement mortar, for example, and its heat insulating body preferably comprises glass foam or rock foam. In this instance, a structured surface to which grit is possibly applied serves for transmitting transverse force. A masonry unit of this kind is no doubt satisfactory with respect to heat insulation and with respect to transmission of compressive force, but the technical features suggested in the above-cited document are not persuasive with a view to the transmission of transverse force.
EP 0 338 972 A1 discloses a cantilever slab connection element by which balconies in particular, as an example of cantilever slabs, can be connected to an adjacent floor slab. The known cantilever slab connection element comprises a rectangular insulation body traversed by compression rods which are located one above the other in pairs and which run through the insulation body horizontally. In order to prevent rusting of these compression rods, which are preferably not produced from stainless steel for cost reasons, they are each enclosed by sleeves, and a hardenable material, e.g., a polymer-enhanced mortar, is injected between the sleeves and the compression rods. In one of its possible embodiments, the proposed cantilever slab connection element also has transverse force transmitting members, but they traverse the insulation body so as to be spatially separated from the compression rods.
The subject matter of WO 2010/046 841 A1 is a connection element for building connections in which an insulating body is traversed by reinforcement bars extending diagonally at an angle between 1° and 89° to the vertical which are connected in pairs to a reinforcing plate. Accordingly, the known connection element appears to have exclusively transverse force transmitting elements, since the reinforcing plate is not suitable as a compression element either with respect to its construction or with respect to its inclusion within the above-cited document.
A construction element for heat insulation in masonry is known from DE 94 13 502 U1. While vertical supporting columns of cement mortar which are connected to one another by webs are disclosed as compression elements, the material for the heat insulating bodies comprises rigid foam polystyrene. However, there is no mention made within this document of possible elements for transmitting transverse force.
EP 1 154 086 A2, suggests a heat insulating element for heat flux decoupling between wall part and floor slab, does mention elements for transmitting transverse force. The known heat insulating element can have column-shaped supporting elements having an insulating element filling the intermediate spaces between these supporting elements. Anchor projections in the form of dowels arranged flat on the outer sides of the suggested heat insulating element serve as element for transmitting transverse force and tensile force. This type of known heat insulating element may be feasible with respect to its heat insulation and can perhaps also contain light transverse forces that can occur when a known constructional member of this kind is transported; however, this document does not suggest an approach for a convincing solution to the problem of containing larger transverse forces such as those arising, for example, from systematic earth pressure or wind stabilization on a possible order of magnitude of at least greater than 10 kN/m.
Finally, EP 2 241 690 A2 discloses a connection element for the foundation of concrete structural component parts in which steel reinforced concrete columns and a concrete crossbeam supported by these columns are inserted in an insulation body for the connection of floors which is to be anchored therein. In a possible embodiment form, transverse force transmitting steel bars project downward out of the concrete columns.
Corresponding to known constructions for heat insulation, FIG. 1 shows the customary mounting of a concrete wall (15) on a concrete floor slab (13) with reference to a conventional concrete construction (11). The concrete floor slab (13) and the concrete wall (15) are connected to one another monolithically by frictional engagement and without insulation. It can be seen that the heat insulation (5, 7) is provided on the outer side of and underneath the concrete floor slab (13) and also on the outer side of the concrete wall (15). For structural reasons, the heat insulation (7) which is arranged under the concrete floor slab (13) must be compression-resistant, age-resistant and rot-resistant depending on the degree of loading.
As a rule, the required compressive strength of the heat insulation (7) under the floor slab must be greater than 150 kN/m2. The materials commonly used for this purpose are XPS panels, foam glass blocks or foam glass gravel. These are high-quality, compression-resistant materials. High compressive strengths result in lower heat insulating values at lambda>40 mW/mK. The comparatively high heat conductivity at constant thermal insulating power results in greater layer thicknesses and, therefore, higher materials consumption than comparable solutions with interior insulations. Further, the ecology of the building is negatively affected by the high consumption of resource-intensive materials (embodied energy). Nevertheless, for want of alternatives, this type of construction is used for low-energy and passive-house concepts.
The concrete construction (11) according to FIG. 2 is monolithic, frictionally engaging and only unsatisfactorily insulated. The heat insulation (5, 9) is arranged on the outer side of the outside wall (15) and is arranged so as to rest upon the concrete floor slab (13). The use of interior insulation (9) offers enormous cost savings as well as a reduction in the embodied energy required; however, this construction has the obvious disadvantage that a cold bridge exists between the concrete floor slab (13) and the concrete wall (15).
In FIGS. 3 and 4, a non-compression-resistant heat insulation (9) is arranged below and/or above a concrete (basement) ceiling (29) such as is applied, for example, for unheated basement rooms. A concrete construction (11) of this kind is likewise monolithic, frictionally engaging and only unsatisfactorily insulated. There is also a cold bridge between the concrete wall (15) and the concrete (basement) ceiling (29) in this solution. Systems of this kind are not suitable for low-energy houses or passive houses because of the local energy loss and the risk of mold growth (structural cold bridge).


A test system and a test method thereof. The test system includes an electronic device and a test device. The electronic device includes a plurality of output interfaces and provides a corresponding test signal via the output interfaces according to a group of operation commands. The test device includes a transforming unit, a multiplexer unit, a processor unit and a plurality of test interfaces which are respectively coupled to the output interfaces. The transforming unit transforms the test signals received via the test interfaces. The multiplexer unit selects the transformed test signals. The processor unit controls the multiplexer unit to select one of the transformed test signals, and determines whether the transformed test signal being selected conforms a predetermine condition for generating a test result signal. The processor unit controls the communication unit to transmit the test result signal to the electronic device according to the test result signal.

1. Field of the Invention
The invention relates in general to a test system and a test method thereof, and more particularly to a test system and a test method thereof for testing a plurality of output interfaces of an electronic device automatically.
2. Description of the Related Art
With the rapid advance in science and technology, many electronic devices used in everyday life are developed. The electronic device, such as a notebook computer which supports a plurality of output interfaces to satisfy consumers' needs in terms of audio and video quality. The output interfaces support one of video graphics array (VGA) interface protocol, high definition multimedia interface (HDMI) protocol, S-video, display port, Sony/Philips digital interface (S/PDIF) or audio line out.
Before the electronic device is delivered from the factory, the test personnel test the output interfaces of the electronic device artificially. Firstly, the test personnel couples the test device (such as an earphone) to a corresponding output interface (such as support audio line out protocol), and further uses the electronic device to output a test signal (such as a sound signal). Afterwards, the test personnel determine whether the output interface is normal by hearing with the earphone artificially. Normally, the electronic device has a plurality of output interfaces. However, the above method of testing the electronic device artificially may result in inaccuracy due to artificial operation, and is both time consuming and labor consuming.


An arrangement for and method of applying heat-transferrable decalcomania to a generally cylindrical cup portion of a handled mug comprises tightly wrapping a flexible sheet-like heating blanket around at least a major portion of the circumferential surface of the cup portion over which the decalcomania has been laid, thereby pressing the decalcomania against the cup portion. Heat is generated at the blanket in an amount sufficient to transfer the decalcomania to the cup portion.

1. Field of the Invention
This invention generally relates to an arrangement for and a method of applying heat-transferrable decalcomania to a circumferential surface of a container and, more particularly, to applying such decalcomania to a generally cylindrical cup-shaped portion of a mug.
2. Description of Related Art
It is well known to apply a heat-transferrable decalcomania, commonly known as a decal, to clothing such as T-shirts. The T-shirt is typically laid on a flat support surface, and a desired decal is laid on the so-supported shirt. The decal has a peel-off protective sheet facing away from the shirt. Thereupon, a pressing device engages the protective sheet and, under the simultaneous application of pressure and temperature, transfers the decal to the shirt. The affixation of the decal to the shirt is completed by removing the protective sheet.
Existing T-shirt pressing devices cannot be used when it is desired to apply such decals to curved surfaces and, more particularly, to the generally cylindrical cup-shaped portion of a handled mug, due to the curvature of the mug. To properly affix the decal, uniform pressure and temperature must be applied over the entire expanse of the decal and, in turn, over that cylindrical portion of the mug that is overlaid with the decal. To that end, it has been proposed to press a rigid, bulky, heated, curved, metal casting toward one side of the cup-shaped portion of the mug, or to hinge together two such metal castings and to press the latter toward both opposite sides of the cup-shaped portion of the mug.
Although the use of curved castings is generally satisfactory for its intended purpose of applying a decal on a curved surface, such curved castings have not proven altogether desirable in use. First of all, it is often desirable to apply to the cup large decals, i.e. those which extend around the cup-shaped portion over an arc length greater than 180.degree.. The known castings can only effectively apply small decals to one or a plurality of areas on the cup-shaped portion of the mug.
Secondly, the rigid castings do not permit mugs of different sizes to be accommodated in a single apparatus. An 8-oz. mug requires a different casting than a 12-oz. mug due to their different radii of curvature. As a result, the known rigid castings can only readily handle a single mug size. Different castings of different sizes would be required to handle different sized mugs.
Thirdly, the known metal castings have a relatively large mass, and consume a great deal of electrical energy in the process of heating up such a mass to the desired temperature. At the same time, the known castings cool very slowly and, hence, a potential safety problem exists for the operator.

Arrangement for and method of applying heat-transferrable decalcomania to mugs


Method and apparatus for processing time division multiplexed (TDM) signals which may be custom in format. The TDM signal is translated to an intermediate frequency, or externally demodulated, input, and processed. Individual channels of either analog, digital or both are output. Since the configuration of the processor is software controlled, different TDM signals may be processed without reconfiguring hardware.

Signal multiplexing is becoming increasingly widespread. Many new custom multiplexing structures are being developed. The communications market demands inexpensive, high-quality, flexible systems worldwide to meet growing customer demands. A summary of several of the digital multiplexing methods being used is provided for background purposes.
Time Division Multiplexing (TDM)
Time division multiplexing is a method of transmission where all individual users share the same available bandwidth divided into time segments or time slots (see FIG. 1).
Today there are many different types of multiplexors. Some maintain a standard structure and some are custom configured specifically for the user. Multiplexing structures have some basic characteristics in common such as synchronization, time slots and channel allocations, frame rates, and frame widths. Any or all of these characteristics may be altered to create a new multiplexing structure. Alteration of a single binary bit in the synchronization, frame width, frame rate or time slot and channel allocation can create an entirely new multiplexor that cannot be processed using standard demultiplexor equipment.
Time Multiplexing and Signal Generation
A description for a generic multiplexor is provided below. There are several steps required to digital time multiplex channels of data. All the channels must be digitally formatted. If the channels are analog, i.e., voice, etc., they must be converted through an analog to digital process in order to represent the signal in a digital manner. If the channels are already in digital format then they are ready for multiplexing. Once digital preparation is complete, the channel is then assigned its placement within a framed period of time.
A simple multiplexor frame consists of a binary pattern utilized for time reference sync code at the beginning of the frame followed by a series of timeslots (see FIG. 1). Synchronization may take several frames or several time slots within the frame along a matrix. Timeslots may also be allocated on a multiple frame matrix as well.
The frame is sent at a continuous constant rate, maintaining proper synchronization by the sync code. The timeslots not utilized by the sync code are then available for channel occupation. These timeslots can be allocated to a channel of data individually or in combination to achieve multiple data rates. The number of time slots utilized for each channel is dependent on the needs of the user and the flexibility of the multiplexing equipment.
After the frames have been generated, the data is streamed to a modem for addition of transmission protocols such as forward error correction, randomization and modulation. Common modulations multiplexors use are: on-off keyed, frequency shift keyed, minimum shift keyed, bi-phase shift keyed, quaternary shift keyed, quaternary amplitude modulation and gaussian minimum shift keyed. Basically multiplexors may use any modulation that can be used for binary transmission.
The new signal is sent to a receiving demultiplexor (see FIG. 2) after it is modulated in an analog transmission ready form. The process for demultiplexing and receiving the data in its original format is the reverse of the multiplexing process. The entire multiplexing transformation process is transparent to the users of the multiplexing system.
Prior Art Processing of Time Division Multiplexing (TDM) Signals
Presently, the demultiplexing of TDM signals is based upon single-purpose, fixed solution approaches. Each time a new situation is encountered, it is necessary for the user to manually analyze the signal. After manual analysis the user must then develop an automated or semi-automated system to process that specific TDM signal. This approach has proven to be costly and ineffective as systems are rapidly evolving and being deployed.
Present TDM demultiplexing approaches are hardware intensive and hardware specific. This results in inflexible and expensive systems that are developed to meet a single need specific to the single type of demultiplexing structure. Development dollars become tied up in unwieldy hardware solutions. A simple change in the structure of the multiplexor of interest has the potential to render past solution hardware processing components completely useless.

Method and apparatus for processing custom time division multiplexed signals

The United States of America as represented by the Secretary of the Air Foece


There is provided a method including performing frequency domain acknowledgement/negative acknowledgement (ACK/NAK) bundling across component carriers within a user equipment reception bandwidth; generating a bundled ACK/NAK value corresponding to at least one code word on the basis of the performed ACK/NAK bundling; and including information relating to the generated bundled ACK/NAK value and the number of detected downlink grants within the user equipment reception bandwidth in an ACK/NAK resource to be transmitted on an uplink control channel.

In the ongoing evolution of advanced radio systems, carrier aggregation has been considered as one possibility to meet the backwards compatibility requirements for example in one realization of a Long Term Evolution Advanced (LTE-A). LTE-A is the next step from LTE, fulfilling the requirements of the fourth generation (4G) communication network as specified by the International Telecommunications Union (ITU). LTE is also the next step from a universal mobile telecommunications system (UMTS).
Some of the main requirements related to the backwards compatibility are for example: a Release 8 E-UTRA (enhanced UMTS terrestrial radio access) terminal must be able to work in an Advanced E-UTRAN (enhanced UMTS terrestrial radio access network), and an advanced E-UTRA terminal must be able to work in a Release 8 E-UTRAN.
LTE-A applies a physical uplink control channel (PUCCH) to transmit control signals, such as an acknowledgement (ACK)/negative-ACK (NAK), a channel quality indicator (CQI) and a scheduling request (SR) indicator, from user equipment (UE) to an evolved node B (eNB). There are two alternative ways to transmit uplink control signals in LTE-A: (1) PUCCH and (2) PUSCH (physical uplink shared channel) time-multiplexed with uplink data. This application deals mainly with uplink control signals on the PUCCH. From the point of view of uplink/downlink control signalling, one solution is to copy the existing Release 8 control plane (PDCCH, PUCCH etc.) to each component carrier (CC). From now on, this concept is denoted as a NxPDCCH structure in LTE-Advanced. Due to the backwards compatibility requirement, it is also assumed that Release 8 type PUCCH resources are reserved for each downlink component carrier transmitting PDCCH. Those resources are located on the corresponding uplink component carriers.
One baseline assumption for LTE-Advanced has been to support one transport block and HARQ (hybrid automatic repeat request) entity per component carrier. It is generally understood that having one separate PDCCH per component carrier (NxPDCCH) seems to be a suitable downlink control signalling approach for such system operation. From the point of view of the uplink control signalling, there are certain aspects that require special attention when using the NxPDCCH approach. One aspect is cubic metric (CM) properties. Multi-carrier transmission is always realized in uplink when uplink/downlink resources are allocated into different component carriers. From uplink point of view, single carrier transmission should be the target whenever possible to minimize the CM, i.e. the simultaneous transmission of parallel PUCCHs (NxPUCCH) should be avoided. Another aspect is control channel coverage in uplink. Multi-ACK/NAK transmission (ACK/NAK multiplexing) is always realized when more than one downlink component carrier is allocated. Uplink coverage is an issue with multi-bits ACK/NAK. Therefore, ACK/NAK bundling, i.e. one common ACK/NAK for all downlink transport blocks and allocated component carriers, should always be an option to ensure optimized uplink coverage. Thus, more advanced control channel design solutions are needed to support ACK/NAK bundling on the PUCCH.

Apparatus, method and article of manufacture


The present disclosure relates to terminals and display screens. In an embodiment, a terminal includes a display area, the display area includes at least two display regions, the at least two display regions include a first display region and a second display region, a pixel density of the first display region is less than a pixel density of the second display region, and the pixel density of the first display region is less than or equal to a maximum pixel density of the first display region in a transparent state when the first display region is unlit.

In the display field, full screen display technology has gradually become the mainstream, and this technology is very helpful to improve the screen ratio of the mobile phone (the relative ratio of the display screen and the front panel area of the mobile phone). In the process of achieving the full screen display, the setting of the front device such as a front camera is the most difficult. The conventional terminal needs to provide a non-display area at the top of the terminal, and the front camera is located in the non-display area. Obviously, this solution cannot achieve a full screen display of the terminal.


Shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber are necessary to be suppressed by the apparatus and method of the invention, whereby contamination of a substrate by particles is suppressed. If one vacuum chamber is a substrate processing chamber for performing a vacuum process on the substrate and the other chamber is a transfer chamber having a substrate transfer device therein, the gate valve is opened when inner pressures of both the vacuum chambers are less than 66.5 Pa and higher one thereof is less than twice a lower one thereof. Preferably, a purge gas for peeling of particles is supplied, before supplying the purge gas for pressure control, into the substrate processing chamber with a flow rate greater than that of the purge gas for pressure control.

In a semiconductor fabrication apparatus, there is a known mechanism such that a plurality of processing chambers is coupled to a transfer chamber having a substrate transfer device, i.e., cluster tools or multi-chamber mechanism. Such a mechanism has some merits that a vacuum processing on a substrate can be performed continuously without breaking a vacuum state in case of performing same several times, for example, and a processing chamber can be kept away from the atmosphere. Further, high throughput can be obtained.
In the cluster tools mentioned above, one side of a polygonal transfer chamber is airtightly coupled to a load-lock chamber, and, at the same time, other sides are airtightly coupled to a plurality of processing chambers. In addition, a substrate transfer device installed inside the transfer chamber has two forks for supporting a semiconductor wafer (hereinafter, referred to as 'wafer'). Here, the forks can be revolved, extended, and shrunken by operations of a robot.
While, in the cluster tools, one fork of the substrate transfer device reaches to a load-lock chamber to pick up an unprocessed wafer to mounts same thereon, the other fork reaches to load a processed wafer thereon. Thereafter, the unprocessed wafer on the one fork is transferred to the processing chamber by revolving the robot by 180°.
However, if the robot is rotated by 180° whenever a wafer is loaded in one processing chamber, it takes a relatively long time to transfer the wafer. As a result, throughput becomes lowered. For insuring high throughput by effectively using the cluster tools, it is important to transfer the substrate efficiently. As an apparatus for efficiently transferring a substrate, there has been disclosed an apparatus in Japanese Patent Laid-open Publication Heisei No. 11-207666.
In a cluster tools described in the aforementioned prior art, as shown in FIG. 21, five processing chamber stations (hereinafter, referred to as 'processing chamber') 91 to 95 are airtightly coupled to a transfer chamber 90, and a handling robot 96 for transferring a wafer of a substrate to the transfer chamber 90 is disposed. The handling robot 96 has two transfer tables 97a and 97b for supporting the wafer. The transfer tables 97a and 97b are constructed so as to appear and disappear in the same direction as a revolving direction or in a direction shifted a small angle, by robot link mechanisms 98a and 98b which can conduct extending and shrinking operations, and revolve. Thereby, the transfer tables 97a and 97bneed not to revolve to reach a next processing chamber but revolve by a few angles such that a processed wafer can be exchanged with an unprocessed wafer in the same corresponding processing chamber.
FIGS. 17 to 20 of the aforementioned prior art show operation states of the conventional handling robot mentioned above. In this example, it is described that each of the two robot link mechanisms 98a and 98b stands by in the transfer chamber 90 while supporting an unprocessed wafer. At first, a wafer of a first robot link mechanism 98a is loaded into a processing chamber 93, and subsequently, a wafer of a second robot link mechanism 98b is loaded into the processing chamber 94 adjacent to the processing chamber 93.
However, when comparing the time required for performing a process in each processing chamber of the cluster tools with that for transferring an unprocessed wafer from a load-lock chamber to the processing chamber, there are cases that the processing time is shorter than the transfer time and vice versa. Here, in case where the processing time is longer than the transfer time, as described in the prior art, the unprocessed wafer is held by the substrate transfer device in the transfer chamber until performing a process on a prior wafer is completed in the processing chamber. Upon completing the process in the corresponding processing chamber, the processed wafer will be immediately unloaded. Since the processed wafer and an unprocessed wafer can be quickly exchanged in the corresponding process chamber, it is possible to reduce the transfer time and transfer effectively.
However, in case where the processing time is shorter than the transfer time, the processing on the wafer must already have been completed in the processing chamber while the unprocessed wafer being transferred from the load-lock chamber by the substrate transfer device. Thus, the configuration of the aforementioned prior art does not help to facilitate the transfer of the wafer effectively since there is no case where the unprocessed wafer stands by until performing a process on a prior wafer is completed in the processing chamber, in such a state where a wafer is supported by the substrate transfer device in the transfer chamber.
Further, there are the following problems in an apparatus for performing a vacuum process of a cluster tools or the like. For example, when supporting or repairing the apparatus, an interior of the processing chamber is opened to the atmosphere by opening a lid of the processing chamber. At this time, particles from the outside are introduced into the processing chamber to thereby be attached thereto. In addition, reaction products are attached to the processing chamber on performing a vacuum process, e.g., etching. Meanwhile, when loading a wafer from the load-lock chamber into the processing chamber, a gate valve of a sluice valve is opened. At this time, if there is a pressure difference between the processing chamber and the load-lock chamber, shock waves are generated to thereby peel off the particles attached to the chamber. As a result, there is a concern for contaminating the wafer.
Meanwhile, there has been known a technology for suppressing a rapid flow of a gas and preventing an oscillation by setting up the pressures of two chambers at the vicinity of the atmosphere so as to minimize the pressure difference before opening the gate valve between the processing chamber and the load-lock chamber or the processing chambers adjacent to each other, and making the pressures equal by opening a connecting line valve (Japanese Patent Laid-open Publication Heisei No. 6-177060).
However, the aforementioned method is not effective since shock waves are generated when opening the valve in the case of employing a connecting line between the vacuum chambers. Further, even if the pressure difference becomes small, the shock wave strong enough to peel off the particles inside the chamber may be generated depending on a pressure band. Since a design rule of a semiconductor device is getting more and more strict, it is required that the substrate should be managed more carefully to prevent the contamination of the wafer due to the particles. However, it is difficult to respond to such needs with the conventional technology.

Substrate processing apparatus and substrate transferring method


A double deck elevator comprising an upper cage and a lower cage vertically movable together in a hositway, wherein a space between the upper cage and the lower cage is covered by covers. The covers guide airflow flowing around the space to reduce air turbulence noise, and consequently the quietness and comfortableness in the cages is improved.

1. Field of the Invention
The present invention relates to a double deck elevator comprising an upper cage and a lower cage vertically movable together in a hoistway, and more particularly to a double deck elevator wherein a space existing between the upper cage and the lower cage is covered with covers for reducing air turbulence noise to improve quietness and comfortableness in the cages.
2. Description of the Related Art
In conventional double deck elevators shown in FIGS. 23, 24 and 25, a hoistway 1 is provided with a pair of guide rails 2 vertically extending along the inner walls of the hoistway 1 respectively, and a cage assembly 3 hoisted by a main rope 4 is arranged between the guide rails 2 to move vertically guided by the guide rails 2.
The cage assembly 3 comprises a cage frame 5, an upper cage 6 and a lower cage 7 mounted on the cage frame 5 respectively. A plurality of guide means 8, which have guide rollers 8a rolling on the respective guide rails 2, are provided at a top-side, a bottom-side, left and right sides of the cage frame 5.
On a middle beam 9 and a bottom beam 10 of the cage frame 5, cage receiving frames 11 and 12 are mounted respectively. Between the cage receiving frame 11 and the bottom of the upper cage 6, and between the cage receiving frame 12 and the bottom of the lower cage 7, load cells 13 are inserted with vibroisolating rubbers 14 respectively. The weights of the upper cage and lower cages 6, 7 respectively detected by the load cells 13 are used for various purposes.
Displacement sensors 15 are provided between the bottom surface of the upper cage 6 and the middle beam 9, and between the bottom surface of the lower cage 7 and the bottom beam 10 respectively, so that-the displacement of the upper and lower cages 6, 7 can be detected respectively.
As mentioned above, the cage assembly 3 is hoisted by the main rope 4. In a case of 1:1 roping system, the main rope 4 is directly connected to the upper beam 16 of the cage frame 5 (FIG. 24). And in a case of 2:1 roping system, the main rope 4 is wound around sheaves 17 provided on the upper beam 16 of the cage frame 5 (FIG. 25).
When the upper and lower cages 6, 7 arrive the floors called by passengers respectively, the cage doors 18 of the cages 6, 7 face the hall doors 19 of the floors and are opened and closed by a door-driving unit 20. Hall sills 21 are provided on the floors, and cage sills 22 are provided on the floors of the upper and lower cages 6, 7 respectively, such that doors can open and close smoothly.
In the conventional double deck elevators described above, a space "S" exists between the upper cage 6 and the lower cage 7 and the door-driving unit is installed in the space "S". When the upper and lower cages move vertically in the hoistway 1, airflow flowing around the cages enters the space "S" and comes into collision with the door-driving unit 20 and generates air turbulence. The air turbulence results in big noise that disturbs quietness and comfortableness in the upper and lower cages 6, 7.


An electric motor is placed on an upstream side of an exhaust gas recirculation passage of a housing in a direction that is parallel to an intake air flow direction. A first heat release part on a motor housing part of the housing is placed on an upstream side of an exhaust suction aperture in a direction of an intake air flow. A heat release of the electric motor is promoted by direct contact between a new intake air with much lower temperature than an EGR gas and the first heat release part of the motor housing part. Therefore, on the upstream side of the exhaust suction aperture in the direction of the intake air flow, the electric motor can be cooled by the new intake air. By utilizing the intake air suctioned into an inlet port of an engine, the electric motor and the like can be efficiently cooled.

1. Field of the Invention
The present invention relates to an exhaust gas recirculation device, which has an exhaust gas recirculation control valve that opens and closes an exhaust gas recirculation passage, and, more particularly to the exhaust gas recirculation device, which employs a butterfly valve as a valve body of a motor-driven exhaust gas recirculation control valve.
2. Description of Related Art
An exhaust gas recirculation device, which decreases a maximum temperature of combustion, and which reduces harmful substances (e.g., nitrogen oxides) contained in an exhaust gas, has been known. In the above exhaust gas recirculation device, an exhaust recirculation gas (an EGR gas), which is a part of the exhaust gas that flows inside an exhaust pipe of an internal-combustion engine, is mixed into an intake air that flows inside an intake pipe. However, the recirculation (reflux) of the exhaust gas toward an intake side involves deteriorating an output of the internal-combustion engine and performance of the internal-combustion engine. Thus, a flow rate of the exhaust gas (an exhaust gas recirculation quantity: an EGR quantity) that recirculates from the exhaust pipe to the intake pipe needs to be adjusted. Accordingly, the exhaust gas recirculation device, in which an exhaust gas recirculation pipe (an EGR pipe) is provided with an exhaust gas recirculation control valve (an EGR control valve), has been publicly known. More specifically, with regard to the above exhaust gas recirculation device, the part of the exhaust gas of the internal-combustion engine recirculates from an exhaust path through the exhaust gas recirculation pipe into an intake path. Furthermore, the exhaust gas recirculation control valve adjusts an opening area of an exhaust gas recirculation passage, which is formed inside the exhaust gas recirculation pipe.
With reference to FIGS. 10 to 13, an example of structures of the above exhaust gas recirculation control valves will be described below. Rotational motion of an output shaft 102 of an electric motor 101 is transmitted to a valve shaft 104 via a speed reducing gear mechanism 103. A butterfly valve 105 is held and secured to an axial end of the valve shaft 104. By rotating the butterfly valve 105 about a rotational axis of the valve shaft 104, an exhaust gas recirculation passage 111, from which the EGR gas flows into an inside of a housing 106, is opened and closed (for example, refer to U.S. Pat. No. 6,135,415 and EP-1102929-B1). A mixing chamber 112, an air suction passage 110, and an air delivery passage 113 are included inside the housing 106. In the mixing chamber 112, the exhaust gas that flows from the exhaust gas recirculation passage 111 is mixed into the intake air, which is suctioned into the internal-combustion engine. The intake air flows through the air suction passage 110 into an inside of the mixing chamber 112. The intake air flows from the mixing chamber 112 through the air delivery passage 113 toward an inlet port of the internal-combustion engine. The air suction passage 110, the mixing chamber 112, and the air delivery passage 113 constitute a part of an intake path of the internal-combustion engine. Additionally, an EGR gas recirculation opening 114 opens in an inner wall surface of the mixing chamber 112. A valve bearing part 115 rotatably holds the valve shaft 104 via bearing parts 116,117.
The motor-driven exhaust gas recirculation control valve described above employs a water cooling structure or an inlet air cooling structure. The water cooling structure cools down the electric motor 101 and the like by utilizing engine coolant. The inlet air cooling structure cools down the electric motor 101 and the like by using the intake air that flows inside an intake air passage (the intake path). As a result, a temperature of the electric motor 101, the speed reducing gear mechanism 103, the valve shaft 104, or the valve bearing part 115 does not exceed an allowable heat-resistant temperature due to heat conduction from the EGR gas. In addition, the water cooling structure involves forming a coolant path in the housing 106, and drawing the engine coolant from a coolant circuit on a vehicle side. The inlet air cooling structure has a simple structure, and does not require the water cooling.
However, in the conventional motor-driven exhaust gas recirculation control valve, the electric motor 101, the speed reducing gear mechanism 103 and the valve shaft 104 are coaxial along an axis, which is perpendicular to a central axis of the intake path (i.e., the air suction passage 110, the mixing chamber 112, and the air delivery passage 113) of the internal-combustion engine, as shown in FIGS. 10 and 12. The high-temperature EGR gas flows from the exhaust gas recirculation passage 111 through the EGR gas recirculation opening 114 into the inside of the mixing chamber 112. The electric motor 101, the speed reducing gear mechanism 103, and the bearing part 116 are placed at or around a portion of the inner wall surface 119 of the mixing chamber 112, to which the high-temperature EGR gas is directed from the exhaust gas recirculation passage 111. The bearing part 117 is placed near the EGR gas recirculation opening 114.
For this reason, it is possible that the above high-temperature EGR gas contacts the inner wall surface 119 of the mixing chamber 112 before it is sufficiently mixed with the intake air that flows from the air suction passage 110 into the inside of the mixing chamber 112 to reduce its temperature. The contact of the high-temperature EGR gas with the inner wall surface 119 facilitates the conduction of heat of the high-temperature EGR gas to the electric motor 101, the speed reducing gear mechanism 103, and the bearing part 116 via the housing 106, thereby hindering efficient cooling of the electric motor 101 and the like.