A disc drive apparatus includes a tray member, on which a bare disc, or a cartridge accommodating a disc therein is placed, and a disc drive device, into or from which the tray member is loaded or ejected by a drive unit. A medium detection system includes detection holes provided on the tray member to detect a disc or a cartridge. In addition, provided on the disc drive device is a detection unit to optically detect a state including a type of a disc or a cartridge placed on the tray member based on whether the detection holes are shaded in the course of loading of the tray member.

The present invention relates to a disc drive apparatus that detects a type of a medium to be used.
Generally, in order to handle a disc appropriately, it is required that a disc drive apparatus detect a type of a medium to be used, as to type and size of the medium and as to whether the medium is a bare disc or accommodated in a cartridge.
With reference to a conventional disc drive apparatus (optical disc recording and reproducing device) shown in FIGS. 1 to 3, an explanation will be given on how to place a cartridge on a tray, a cartridge holding mechanism, and operations of loading and ejecting of a tray.
In FIG. 1, the reference numeral 201 denotes a body of an optical disc recording and reproducing device, 204 a tray, on which a cartridge and a bare optical disc are placed, and 100 a cartridge, in which an optical disc is accommodated.
A cartridge-placing surface 233 of the tray 204 is provided in the center thereof with two large and small recesses that are provided concentrically. A large-diameter recess defines a large-diameter disc-placing portion 231 and a small-diameter recess defines a small-diameter disc-placing portion 232, both recesses being prepared for use in accordance with an outside diameter of a disc placed in the optical disc recording and reproducing device 201.
In addition, the tray 204 is formed with a front wall 234, a left wall 235, and a right wall 236, which are slightly larger than outside dimension of the cartridge 100 and formed perpendicular to the cartridge-placing surface 233.
As shown in FIG. 2, a cartridge preloading member 237 is provided on an interior part of the tray 204 to be movable in a front/rear direction, and constructed to be held in a preloaded state on a front part of the tray 204.
Provided on a back surface of the tray 204 as shown in FIG. 3 is a rack gear 288 that engages with a final-stage drive gear of a loading gear system 281.
A loading motor 280 provided at the front part of a mechanical chassis 201a is switched in its rotation direction to enable the tray 204 to be loaded and ejected.
A traverse base 266 holds thereon a spindle motor 282 that holds and rotates a disc, an optical pickup 283 that reads and writes information from and onto a disc, a traverse motor 284 that moves the optical pickup 283 radially of a disc, and a lead screw 297.
A rear end of the traverse base 266 is turnably held on the mechanical chassis 201a by a torsion spring and a front end thereof is preloaded downward with a light load.
Two slit holes are provided right and left at the front end of the traverse base 266 to engage with a cam lever 285 that is inserted thereinto to turn about a rotating shaft 292 provided on a bottom surface of the mechanical chassis 201a. The traverse base 266 is vertically driven upon turning of the cam lever 285.
Provided on the traverse base 266 are two alignment pins 214 that engage with positioning holes of the cartridge 100 to keep a clearance between a disc held on the spindle motor 282 and the cartridge 100 to position the cartridge 100 where it does no contact with the disc.
A disc-state detection switch 215 is provided near the alignment pins 214. A plurality of detection switches mounted on a printed board are provided integrally with the traverse base 266 to distinguish a state of engagement with detection holes of the cartridge 100, thereby detecting a state of approval or denial of writing on a disc accommodated in the cartridge 100, front and back surfaces of a disc, and the recording capacity of a disc.
An upper base 228 as an upper lid is provided on the mechanical chassis 201a. Provided on the upper base 228 are a clamper 210 that fixes a disc to the spindle motor 282, clamp arms 212 that hold and make the clamper 210 vertically detachable from the spindle motor 282, and cartridge holding springs 229 that restrict vibrations of the cartridge 100 at the time of loading.
The cartridge 100 is fixed to the tray 204 by the downward biasing force of the cartridge holding springs 229. The biasing force of the cartridge holding springs 229 functions to urge the cartridge 100 against the tray 204 and urge the tray 204 against the mechanical chassis 201a from immediately after the beginning of loading to the completion of loading to eliminate looseness generated among the cartridge 100, the tray 204, and the mechanical chassis 201a, thus reducing vibrations and noise that are generated at the time of loading and rotation of a disc.
An operation of the optical disc recording and reproducing device 201 configured in the above manner will be described taking the case of reproducing a disc accommodated in the cartridge 100.
When placing the cartridge 100 on the tray 204 surrounded by the front wall 234, the left wall 235, and the right wall 236, placement of the cartridge 100 on the tray 204 is completed by sliding the cartridge 100 obliquely downward from forwardly upward of the tray 204 while causing a rear end of the cartridge 100 to push the cartridge preloading member 237 into the further inner part of the tray 204, and finally placing a front end of the cartridge 100 on the cartridge-placing surface 233 in a manner to bring the front end of the cartridge 100 into contact with an inner side of the front wall 234.
At this time, the front end of the cartridge 100 is pushed against the inner side of the front wall 234 by the cartridge preloading member 237 and the cartridge 100 is positioned relative to the tray 204 without looseness in back and forth and right to left directions.
The tray 204, on which the cartridge 100 is placed, is automatically loaded inside the optical disc recording and reproducing device 201 by a drive force of the loading motor 280.
Until loading of the tray 204 is completed, the spindle motor 282, the traverse motor 284, and the optical pickup 283, which are held on the traverse base 266, escape below a loading path of the tray 204 in order to avoid interference with the tray 204, the cartridge 100, and the disc.
Immediately before loading of the tray 204 is completed, a clamp-arm driving projection provided on the tray 204 pushes up one side of the clamp arm 212 that are turnably provided on the upper base 228 by hinges, and lowers the other side of the clamp arm 212, on which the clamper 210 is held. As a result, the clamper 210 is lowered to a position where a disc can be clamped.
When loading of the cartridge 100 placed on the tray 204 is completed after the clamper 210 is lowered, engagement between the tray 204 and the rack gear 288 is released, a drive force by the drive gear is cut off from the tray 204, and only the rack gear 288 is driven rearward relative to the tray 204. The force that drives the rack gear 288 rearward is transmitted to the cam lever 285 as torque of rotation, so that the traverse base 266 ascends along an inclination of the cam lever 285.
As the traverse base 266 ascends, the two alignment pins 214 provided integrally on the traverse base 266 are inserted into two positioning holes provided on the front part of the cartridge 100.
The cartridge 100 is caused to be positionally offset relative to the spindle motor 282 at the time of loading due to looseness between the tray 204 and the mechanical chassis 201a and looseness between the cartridge 100 and the tray 204. When a disc rotates while the cartridge 100 is offset relative to the spindle motor 282, noise is generated due to contact between an outer periphery of the disc and the inner wall of the cartridge 100. When there is a large positional offset, contact acts as resistance to release the clamped state of a disc which may damage the disc inside the cartridge 100.
The alignment pins 214 are inserted into the positioning holes of the cartridge 100 whereby the positional offset of the cartridge 100 relative to the spindle motor 282 is improved and an adequate clearance is ensured between the cartridge 100 and a disc.
Almost simultaneously with insertion of the alignment pins 214 into the positioning holes of the cartridge 100, the disc-state detection switch 215 is also inserted into the state detection hole of the cartridge 100.
Unlike the alignment pins 214, a large clearance is ensured between the state detection hole and the disc-state detection switch 215, so that the insertion is guaranteed with a margin with respect to detection of a state of the cartridge 100 even when the cartridge 100 is positionally offset.
With the insertion of the alignment pins 214 and the disc-state detection switch 215 into the cartridge 100, a center cone is inserted into a center hole of a disc accommodated in the cartridge 100 and the disc floats in a space inside the cartridge 100 while the traverse base 266 ascends.
As the disc floats, the clamper 210 standing by in a clamp position engages with the center cone and clamping of the disc is completed.
However, the conventional disc drive apparatus (optical disc recording and reproducing device) described above involves the following problem.
With respect to distinguishing the media, the switches arranged on the traverse distinguishes a cartridge immediately before the completion of loading. In addition, a 12-cm disc and an 8-cm disc are distinguished from each other after the spindle motor is rotated. Therefore, a preparatory time from insertion of a medium to the start is very long, casing such a problem that a desired scene can not be recorded.
Since there is not provided any means to detect a state of erroneous placement at the time of loading, there is the possibility that a disc falls off inside the drive at the time of loading and the disc cannot be taken out, if an 8-cm disc of small diameter is erroneously placed, offset from a predetermined position on a tray, which has a large opening at the center thereof.
Further, if a disc surface is clamped while the disc is erroneously placed, the disc surface may be damaged.

Loading disc optical detection apparatus


A method is provided for developing a hybrid supercapacitor. The method includes the use of a lithium salt of the electrolyte to carry out the intercalation/insertion of the lithium at the negative electrode but by greatly increasing the concentration of lithium ions of the electrolyte order to subsequently accept a depletion. As the depletion in ions has an impact on the conductivity, the amount and the concentration of the electrolyte are chosen in order to make it possible to accept this depletion white retaining a conductivity of the electrolyte compatible with a powerful system for storage of energy. A portion of the Li+ ions present in the electrolyte is used to form the passivation layer and the compound for intercalation/insertion Li˜0.5C6 at the negative electrode.

1. Field of the Invention
The present invention relates to a process for assembling a hybrid electrochemical system.
2. Description of Related Art
It is known, in the prior art, that a hybrid supercapacitor, combining the storage principles of a lithium ion secondary battery and of an electrochemical double-layer capacitor (EDLC), has a higher energy density, generally of the order of 7 Wh·kg−1, than a standard EDLC. A symmetrical cell of a standard EDLC is composed of two identical capacitive electrodes. The potential difference of such an uncharged cell is 0 V and it increases linearly with time during the galvanostatic charging of the cell. During the charging, the potential of the positive electrode increases linearly and the potential of the negative electrode decreases linearly.
During discharging, the cell voltage decreases linearly. Industrial symmetrical EDLCs operating in an organic medium usually have a nominal voltage of 2.7 V. A contrario, the electrode of lithium battery type is characterized by a virtually constant potential during the charging and discharging of the system. In order to increase the operating voltage of a supercapacitor, it is possible to replace the negative electrode of an EDLC with a carbon-based electrode of "lithium battery" type.
The main problems to be solved in this type of hybrid supercapacitor are the formation of the passivation layer and the intercalation/insertion of the lithium into the negative electrode. In a first step, the passivation of the negative electrode makes the formation possible, on this electrode, of an intermediate layer during a first specific charging cycle. In the presence of this passivation layer, the lithium ions are desolvated before being intercalated/inserted into the negative electrode. The presence of a well-formed passivation layer makes it possible to prevent the exfoliation of the negative carbon electrode during the cycling of the system. The lithium is intercalated/inserted into the negative electrode until a composition Li˜0.5C6 is achieved. Thus, the potential of the negative electrode remains relatively stable during the successive charges/discharges of the hybrid supercapacitor.
In the state of the art, different solutions are normally selected to produce the passivation layer and to intercalate/insert a sufficient amount of lithium ions into the negative electrode:
i) to use a source of lithium metal in order to prevent the electrolyte from being depleted, as described, for example, in patent application EP-A1-1 400 996;
ii) to carry out the ex situ intercalation/insertion of the lithium into the electrode active material, for example by reactive grinding;
iii) to saturate the surface functional groups of the activated positive carbon electrode by means of an electrolytic solution comprising lithium ions, for example by means of an aqueous LiOH solution, as provided for in patent application JP 2008-177263. The lithium present in the positive electrode subsequently makes it possible to carry out the intercalation/insertion into the negative electrode without depleting the electrolyte.
The disadvantage of the use of lithium metal is that it is particularly expensive and restrictive industrially. Furthermore, in the presence of organic solvent, the lithium metal can give rise to thermal runaway and can thus present safety problems.
The ex situ production of a compound for intercalation/insertion of the lithium is also problematic: the material subsequently has to be able to be handled for the purpose of the manufacture of the energy storage system. In point of fact, it is known that these materials are particularly reactive with regard to oxygen, water and nitrogen.
These three solutions are thus not economically and/or technically satisfactory.
There is also known, from the publication "High-energy density graphite/AC capacitor in organic electrolyte" (V. Khomenko, E. Raymundo-Pinero and F. Beguin), which appeared in the Journal of Power Sources, 177 (2008), 643-651, a process for assembling a hybrid supercapacitor, that is to say an electrochemical energy store system comprising, on the one hand, a negative electrode based on nonporous or only slightly porous carbon (for example graphite), said electrode being an electrode conventionally used as anode in lithium batteries, and, on the other hand, a positive electrode typically used in electrochemical double-layer capacitors, that is to say based on nanoporous carbon, in which the intercalation/insertion of the lithium at the negative electrode is carried out using the lithium salt occurring in the electrolyte. However, the cells used are laboratory cells providing a sufficiently great reservoir of electrolyte for the conductivity and the composition of the electrolyte to remain unchanged during the intercalation/insertion of the lithium into the negative electrode. In the case of more compact systems, the volume of electrolyte is limited and the intercalation/insertion of the lithium into the negative electrode depletes the electrolyte, which brings about a fall in the performance of the system.

Method for assembling a hybrid lithium supercapacitor

Centre National De La Recherche Scientifique


In a silicon layer formed on an insulator layer, a lattice defect region is formed to be adjacent to a channel region and source/drain regions, and the lower part of the channel region functions as a high-concentration channel region. The holes of hole-electron pairs generated in the channel region are eliminated by recombination in the lattice defect region, thereby suppressing the bipolar operation resulting from the accumulation of holes and increasing the source/drain breakdown voltage. The threshold value of a parasitic transistor is increased by the high-concentration channel region so as to reduce the leakage current in the OFF state. Alternatively, the holes may be moved to the source region to disappear therein by providing, instead of the lattice defect region, a high-concentration diffusion layer constituting and operating as a pn diode between the channel and source regions. Thus, it is possible to provide an SOI transistor causing no decrease in the source/drain breakdown voltage resulting from substrate floating effects and causing little OFF leakage current because of the activation of the parasitic transistor.

The present invention relates to a semiconductor device formed on an insulator substrate or on an SOI (silicon on insulator) substrate in which a single crystalline silicon thin film is formed on an insulator film, and also related to a method for fabricating the semiconductor device.
In recent years, in the field of portable communication units such as cellular phone units, a device operating with low voltage, high speed, and low consumption power has been demanded. In order to satisfy these requirements or realize these properties, various attempts have been vigorously carried on by forming a transistor on an insulator substrate or on an SOI substrate, in which a semiconductor film is formed on an insulator film (hereinafter, simply referred to as an SOI transistor), and thereby reducing the parasitic capacitance or the like.
The structure of the conventional SOI transistor will be described with reference to the drawings.
FIG. 11 is a cross-sectional view of the conventional SOI transistor.
As shown in FIG. 11, an insulator layer 702 of an oxide film is formed on a p-type single crystalline silicon substrate 701. A silicon layer 703 used as the active region of the transistor is formed on the insulator layer 702. A LOCOS film 704 is formed for the purpose of isolating respective regions of the silicon layer 703 from each other just like islands. A gate oxide film 705 is selectively formed on each of the isolated regions of the silicon layer 703, and a gate electrode 707 of a polysilicon film is formed on the gate oxide film 705. Sidewalls 708 are formed on the sides of the gate electrode 707. A channel region 714 is formed in the silicon layer 703 just under the gate oxide film 705 and sandwiched by a source region 709 and a drain region 710, which contain a high-concentration impurity. An interlevel insulator film 711 of a BPSG film or the like, contact holes 712, and a metal interconnection layer 713 as an electrode are formed on the LOCOS film 704, the gate electrode 705, the source region 709 and the drain region 710.
FIGS. 12a to 12e are cross-sectional views depicting the fabricating process of the conventional SOI transistor.
SOI substrates can be classified into SIMOX substrates, bonded substrates, and other types of substrates. The SOI substrate to be described herein has a three-layer structure: a silicon substrate 701; an insulator layer 702 of a silicon oxide film 701 formed thereon; and a silicon layer 703 formed further thereon as the uppermost layer.
First, as shown in FIG. 12a, the LOCOS film 704 is formed by selective oxidation technique by using a mask consisting of a pad oxide film 721 and a silicon nitride film 722, thereby isolating the respective regions of the silicon layer 703 from each other just like islands.
Then, as shown in FIG. 12b, after removing the pad oxide film 721 and the nitride film 722, a p-type impurity is implanted in order to control the threshold value.
Next, as shown in FIG. 12c, after forming a silicon oxide film and a polysilicon film in this order on the silicon layer 703, the gate oxide film 705 and the gate electrode 707 are formed by patterning, and then the sidewalls 708 are formed on the sides of the gate electrode 707.
Subsequently, as shown in FIG. 12d, n-type impurity ions are implanted into the silicon layer 703 by using the gate electrode 707 as mask, thereby forming the source region 709 and the drain region 710 in a self-aligned manner.
Finally, as shown in FIG. 12e, after the interlevel insulator film 711 is deposited, the contact holes 712 are formed in the interlevel insulator film 711. After the metal interconnection layer 713 is deposited to fill up the contact holes 712 and to extend over the interlevel insulator film 711, the layer 713 is patterned.
By performing these process steps, the SOI transistor shown in FIG. 11 is completed.
However, such an n-channel-type SOI transistor where the silicon layer formed on the SOI substrate is isolated by the LOCOS film and the potential of the channel region is electrically floating, has the following two problems.
Firstly, in an MOS transistor, if the drain voltage is high enough, the electrons implanted into the channel region from the source region have so high energy in a region near the drain that that they cause impact ionization and generate hole-electron pairs. In a normal bulk transistor, generated electrons move to the drain region while the holes move to the inside of the substrate, causing not so serious problem. However, in the SOI transistor where the channel region 714 is electrically floating, holes are accumulated in a region of the electrically floating channel region 714 in the vicinity of the source region 709. Then, the accumulated holes lower the energy barrier between the source region and the channel region, causing a bipolar operation due to the amplification action similar to that of a bipolar transistor and increasing the current flowing in the channel region. This causes a problem that the source-drain breakdown voltage decreases.
Secondly, the use of a LOCOS film for the isolation of transistors generally causes a bird""s beak in the isolated area. Thus, in the process step shown in FIG. 12b, the impurity concentration implanted into the portion of the silicon layer 703 under the bird""s beak becomes lower than that of the other channel region 714. As a result, a parasitic transistor, i.e., a so-called an edge transistor, where the portion under the bird""s beak becomes a channel region, is formed.
FIGS. 13a and 13b are respectively a plan view and a cross-sectional view taken along the line XIIIxe2x80x94XIII for illustrating edge transistors formed on both ends of a main transistor, which is an original SOI transistor. As shown in FIG. 13a, in addition to the current (see the bold arrow in FIG. 13a) flowing through the main transistor, current also flows through the edge transistors generated on both ends (see the fine arrows in FIG. 13a). In an SOI transistor having no well structure, since the impurity concentration in the silicon layer just under the bird""s beak is lower than that of the channel region, the threshold value of the edge transistors becomes lower than that of the main transistor. Consequently, as shown in FIG. 14, if the voltage to be applied to the gate electrode is being increased, the edge transistors are turned ON before the main transistor is turned ON. As a result, the sub threshold property has a hump, causing a problem that the leakage current during the standby mode of the transistor increases.
An object of the present invention is to improve the reliability of an SOI transistor, formed to be isolated by a LOCOS film on a region on an SOI substrate and having a channel region with an electrically floating potential, by increasing source/drain breakdown voltage and by preventing leakage current from increasing during the stand-by thereof.
In order to accomplish this object, the present invention provides a region for eliminating carriers in the vicinity of the channel region of the SOI transistor such as a lattice defect region containing a lot of lattice defects functioning as the center of recombination, and/or a high-concentration diffusion region constituting a diode between the source/drain regions.
The semiconductor device of the invention includes: a substrate having an insulator layer thereon; a semiconductor layer of a first conductivity type formed on the insulator layer, part of the semiconductor layer functioning as a channel region; a gate insulator film formed on the channel region of the semiconductor layer; a gate electrode formed on the gate insulator film; source/drain regions of a second conductivity type formed in the semiconductor layer so as to sandwich the channel region therebetween; and a hole-eliminating region having a function of preventing the accumulation of holes of hole-electron pairs generated in the channel region, the hole-eliminating region being formed in a region of the semiconductor layer and adjacent to one of the source/drain regions and to the channel region.
In such a structure, when hole-electron pairs are generated in the channel region during the operation of the semiconductor device, the holes gather in parts of the channel region in the vicinity of the source/drain regions or in the source/drain regions. However, the holes are soon eliminated because the hole-eliminating region is provided to be adjacent to the channel region and either the source region or the drain region. Consequently, no bipolar operation results from the accumulation of holes, thereby maintaining the source/drain breakdown voltage at a high level.
In the semiconductor device, the hole-eliminating region may include two separate regions in the semiconductor layer, one of the two regions being adjacent to the source and channel regions, while the other region of the two being adjacent to the drain and channel regions.
In such a structure, in both regions neighboring the source/drain regions, holes are eliminated as a result of recombination. Thus, no bipolar operation results from the accumulation of holes, no matter how the level relationship varies between the voltages applied to the source/drain regions of the semiconductor device.
The semiconductor device may further include an on-gate silicide film formed on the gate electrode and on-substrate suicide films formed on the source/drain regions, respectively, each of the on-substrate silicide films being spaced from the gate electrode via a gap. The hole-eliminating regions may be located below the respective gaps between the on-substrate silicide films and the gate electrode.
As a result, a semiconductor device having reduced gate and/or contact resistance can be obtained, in addition to the above-mentioned effects.
In the semiconductor device, the hole-eliminating region may be a lattice defect region formed by introducing a lattice defect to be a center of recombination.
In such a structure, even if the holes of hole-electron pairs generated in the channel region gather in the regions of the channel region neighboring the source/drain regions or in the source/drain regions, the holes are recombined with electrons and soon eliminated in a lattice defect region containing a lot of lattice defects to be the center of recombination.
In the semiconductor device including the lattice defect region, the lower part of the channel region is preferably a high-concentration channel region containing an impurity of the second conductivity type having a concentration higher than a concentration in the channel region.
In such a structure, the threshold voltage of a parasitic transistor, operating in the semiconductor device separately from the original transistor by using a region of the semiconductor layer neighboring the boundary between the element isolation and the semiconductor layer as a channel region, is increased. Therefore, as represented by the subthreshold characteristics thereof, the original semiconductor device is first turned ON and then the parasitic transistor is turned ON. In particular, if the element isolation is formed of a LOCOS film, the threshold voltage of the parasitic transistor is increased because of the presence of a high-concentration channel region even in a part of the semiconductor layer below the bird""s beak of the LOCOS film. That is to say, since the operation of the parasitic transistor is restricted when a low voltage is applied to the gate, a hump can be eliminated from the sub-threshold characteristics and OFF leakage current is reduced.
The lattice defect region may be formed to entirely cover lower parts of the source, drain and channel regions in the semiconductor layer.
In such a structure, since a region for eliminating holes becomes larger, the holes of the hole-electron pairs are eliminated sooner. Furthermore, the fabricating process can be simplified because the atoms generating lattice defects may be introduced into the entire surface of the substrate.
The same impurity may be introduced into the lattice defect region and the high-concentration channel region.
In such a structure, both lattice defect region and high-concentration channel region can be simultaneously formed by introducing impurity only once if the peak of the impurity concentration is controlled by utilizing the fact that the lattice defects are generated when the impurity concentration reaches a certain level. As a result, the fabrication process can be simplified and the fabrication costs can be reduced.
If the semiconductor device is an n-channel type transistor, atoms of a Group 3b element having a larger atomic radius than an atomic radius of an element composing the semiconductor layer may be introduced into the lattice defect region.
Consequently, the number of lattice defects in the lattice defect region increases, which enhances the function of eliminating the holes.
If the semiconductor layer is composed of silicon single crystals, the Group 3b element is preferably at least one of gallium, indium and thallium.
Atoms of a Group 4b element may be introduced into the lattice defect region.
In such a case, the electrical properties of the semiconductor layer are not adversely affected by the atoms introduced into the lattice defect region.
The Group 4b element is preferably at least one of carbon, silicon and germanium.
The atoms of a Group 0 element (inert gas) may be introduced into the lattice defect region.
In such a case, the electrical properties of the semiconductor layer are not adversely affected by the atoms introduced into the lattice defect region.
The Group 0 element is preferably at least one of argon, krypton and xenon.
In the semiconductor device, the hole-eliminating region may be a high-concentration diffusion layer containing an impurity of a second conductivity type having a concentration higher than a concentration in the channel region.
Consequently, PN diodes are constituted by the high-concentration diffusion layer and the source/drain regions. Thus, even if the holes of hole-electron pairs generated in the channel region gather in the parts of the channel region neighboring the source/drain regions or in the source/drain regions, the holes flow to the source/drain regions and are eliminated soon.
1019 to 1021 impurity atoms/cm3 of the second conductivity type are preferably introduced into the high-concentration diffusion region.
The first method for fabricating a semiconductor device according to the present invention includes the steps of: (a) forming an element isolation film on an SOI substrate including at least an insulator layer and a semiconductor layer formed on the insulator layer, the element isolation film surrounding the semiconductor layer; (b) forming a lattice defect region, a high-concentration channel region and a channel region in the semiconductor layer by implanting, into the semiconductor layer, impurity ions of a first conductivity type, having an atomic radius larger than an atomic radius of an element composing the semiconductor layer, such that a concentration of the semiconductor layer reaches a maximum in a region in the vicinity of an interface between the semiconductor layer and the insulator layer; (c) forming a gate insulator film on the semiconductor layer; (d) forming a gate electrode on the gate insulator film; (e) forming source/region regions in respective regions of the semiconductor layer by introducing an impurity of a second conductivity type into the semiconductor layer by using the gate electrode as a mask, the source/drain regions being located on right and left sides of the gate electrode; and (f) diffusing and activating the impurity of the first conductivity type and the impurity of the second conductivity type by heat treatment.
According to this method, the lattice defect region can be formed to entirely cover the lower part of the semiconductor layer, and the high-concentration channel region and the channel region can be formed thereon by implanting impurity ions having a larger atomic radius than that of the element composing the semiconductor layer only once. Thus, a semiconductor device attaining the above-mentioned effects can be obtained by performing an extremely small number of process steps.
In the first method for fabricating a semiconductor device, if the semiconductor device is an n-channel type transistor, then ions of a Group 3b element may be used as the impurity ions of the first conductivity type in the step (b).
According to this method, a p-type channel region and the high-concentration channel region can be formed simultaneously with the lattice defect region. Thus, an SOI transistor having an excellent source/drain breakdown voltage can be obtained for an n-channel-type MOS transistor causing a problem of bipolar operation.
If the semiconductor layer is composed of silicon single crystals, then ions of at least one of gallium, indium and thallium are used as the ions of the Group 3b element in the step (b).
Since any of these elements has an atomic radius larger than that of silicon widely used for semiconductor layer, a larger number of lattice defects can be generated by introducing a smaller amount of impurity.
The second method for fabricating a semiconductor device according to the present invention includes: (a) forming an element isolation film on an SOI substrate including at least an insulator layer and a semiconductor layer formed on the insulator layer, the element isolation film surrounding the semiconductor layer; (b) implanting, into the semiconductor layer, ions of an element having such properties as causing lattice defects in the semiconductor layer, such that a concentration of the semiconductor layer reaches a maximum in a region in the vicinity of an interface between the semiconductor layer and the insulator layer; (c) forming a high-concentration channel region and a channel region by implanting impurity ions of a first conductivity type into the semiconductor layer such that the concentration of the semiconductor layer reaches a maximum in a bottom region of the semiconductor layer; (d) forming a gate insulator film on the semiconductor layer; (e) forming a gate electrode on the gate insulator film; (f) forming source/region regions in respective regions of the semiconductor layer by introducing an impurity of a second conductivity type into the semiconductor layer by using the gate electrode as a mask, the source/drain regions being located on right and left sides of the gate electrode; and (g) diffusing and activating the impurity of the first conductivity type and the impurity of the second conductivity type by heat treatment.
This method requires additional process steps as compared with the first method for fabricating a semiconductor device. However, a semiconductor device attaining the above-described effects can be obtained with more certainty.
In the second method for fabricating a semiconductor device, the types of atoms to be introduced for forming a lattice defect region may be selected as will be described below in the same manner as in the invention relating to the semiconductor device.
In the second method for fabricating a semiconductor device, in the step (b), ions of a Group 4b element may be used as the ions of the element having such properties as causing the lattice defects.
In the step (b), ions of at least one of carbon, silicon and germanium may be used as the ions of the Group 4b element.
In the second method for fabricating a semiconductor device, in the step (b), ions of a Group 0 element may be used as the ions of the element having such properties as causing the lattice defects.
In the step (b), ions of at least one of argon, krypton and xenon are preferably used as the ions of the Group 0 element.
The third method for fabricating a semiconductor device according to the present invention includes the steps of: (a) forming an element isolation film on an SOI substrate including at least an insulator layer and a semiconductor layer formed on the insulator layer, the element isolation film surrounding the semiconductor layer; (b) forming a semiconductor layer of a first conductivity type including at least a channel region in the semiconductor layer by introducing an impurity of the first conductivity type into the semiconductor layer; (c) forming a gate insulator film on the semiconductor layer; (d) forming a gate electrode on the gate insulator film; (e) forming insulator sidewalls on both side faces of the gate electrode; (f) forming source/drain regions in respective regions of the semiconductor layer by introducing an impurity of a second conductivity type into the semiconductor layer by using the gate electrode and the insulator sidewalls as a mask, the source/drain regions being located on right and left sides of the gate electrode; (g) forming silicide films on the gate electrode and the source/drain regions, respectively; (h) selectively removing the insulator sidewalls; (i) implanting ions of a hole-eliminating element into the semiconductor layer by using the silicide films as a mask such that a concentration of the semiconductor layer reaches a maximum in a region in the vicinity of an interface between the insulator layer and the semiconductor layer; and (j) diffusing and activating the impurity of the first conductivity type and the impurity of the second conductivity type by heat treatment.
According to this method, a hole-eliminating element can be introduced only into limited parts of the channel region in the vicinity of the ends thereof. Thus, it is possible to prevent with certainty the hole-eliminating element from adversely affecting the characteristics of the source/drain regions (such as an increase in source/drain resistance, junction leakage or junction capacitance).
In such a case, in the step (i), ions of an element having such properties as causing lattice defects may be used as the ions of the hole-eliminating element.
Moreover, in the step (b), the impurity ions of the first conductivity type are preferably implanted into the semiconductor layer such that a concentration of the semiconductor layer reaches a maximum in a bottom region of the semiconductor layer, thereby forming a high-concentration channel region and the channel region in the semiconductor layer.
In the third method for fabricating a semiconductor device, in the step (i), impurity ions of the first conductivity type having a concentration higher than a concentration in the channel region may be used as the ions of the hole-eliminating element.
In such a case, the dose of the impurity ions of the first conductivity type is preferably set at 5xc3x971013/cm2 or larger.

Semiconductor device and method for fabricating the same

Matsushita Electric Industrial Co., Ltd.


A dispensing chute comprised of a plurality of slidable telescopically fitted sections for conveying materials from the discharge end of a drum of a mixer truck to a point remote from the vehicle. The chute sections are structured of interlocking open metal frames having replaceable plastic liners removably affixed in the interior of each frame. Dovetail shaped guide and support tracks connecting one chute section to another are also individually removable from the chute section. One end of each chute section has removable flexible wipers which scrape clean the surface of the next chute during the retraction mode. Retraction and extension of the chute sections relative to each other is power operated through the use of attached hydraulic rams controllable through switching to actuate electric solenoid valves. The outer most chute section has an attached remote control switch station to allow controllable powered movement of the telescopic chute in a wide range of movements by the operator from the dispensing end of the chute.

1. Field of the Invention
This invention relates to telescopic chutes used for directing and dispensing aggregate and cementitious materials from a mixer truck to a point remote from the truck. The telescopic chute of this invention is adapted for use on mixer trucks of the type which normally mix and transport concrete.
2. Description of the Prior Art
The majority of chutes now in use for directing and dispensing ready mix concrete and the like from mixer trucks are comprised of several separate trough-like sections which are manually hooked together at the beginning of each job to form one extended chute. Once assembled, the chutes receive the concrete from the dispensing end of the drum of the mixer truck, and transport the flowable concrete using gravity feed a significant distance from the mixer truck. Extended chutes eliminate the need to manually transport the concrete with shovels and or wheelbarrows. The hook-together chute sections are not only heavy, cumbersome, and somewhat dangerous due to the weight to assemble and disassemble, but require storage space on the exterior of the mixer truck after the job is completed.
In order to solve some of the problems associated with separate hook-together chutes, telescopic chutes for dispensing concrete from a truck have been tried in the past. Telescopic chutes are generally comprised of a plurality of overlapping trough-like sections which can be retracted into a compact form for transportation on the mixer truck, and extended for dispensing remote of the truck. Although telescopic chutes for dispensing aggregate mixtures from mixer trucks are not new to the field, their use has not gained any appreciable popularity up to the present.
There exists problems in the past art telescopic chutes which have made their use inconvenient and excessively expensive for profitable use. The major problem associated with past art telescopic chute structures for mixer trucks has been the cost of maintenance over an extended period of time. Aggregate materials containing rock and sand are extremely abrasive, and the chemicals and water mixed with the rock to form concrete are corrosive to chutes, particularly chutes made of metal. Abrasion and corrosion of these metal chutes significantly reduces their functional lifespan. Often a metal chute will have a lifespan as short as eighteen months. Abrasion from the rock and sand also greatly reduces the functional life of sliding interlocks and guide tracks typically used on telescopic chute structures. Telescopic chute structures are quite expensive to build or purchase when compared to simpler more conventional hook-together chute structures, and when the sections of the telescopic chute are worn, it becomes prohibitively expensive, or not cost effective for most companies to replace the chute sections, particularly when replacement may be necessary every 18 months. The high maintenance expense associated with telescopic chutes is recognized by those who have attempted to use this type of structure in the past on mixer trucks
In a patent search performed at the U.S. Patent and Trademark Office, the following past art documents were determined to teach devices somewhat similar to my improved telescopic chute.
A U.S. patent issued to J. F. Oury on Jan. 17, 1961, U.S. Pat. No. 2,968,382, teaches a telescopic chute comprised of smaller individual chute sections which apparently must be entirely replaced when component sections become worn or damaged, primarily the trough section of the chute. Controls for manipulating the extension and angle of the chute are located at the rear of the truck where it may be difficult to see the actual dispensing of the concrete at the distal end of the chute.
L. P. Chapdelaine was granted U.S. Pat. No. 3,157,262, on Nov. 17, 1964, for a telescopic chute operating on a system of cables and pulleys. This device does not appear to include self-cleaning structuring of the chutes and would more than likely experience extreme wear and tear, requiring replacement of entire chute sections.
The U.S. Patent granted to N. S. Hansen on Aug. 8, 1967, U.S. Pat. No. 3,334,872, shows a mixer truck having a front mounted discharge end and chute where the driver can better see and control the distribution of the concrete. Although Hansen mentions controls for the distribution of the concrete being operated from the cab of the vehicle or other convenient location, he does not anticipate the use of telescopic chutes. No mention is made of individual detachable components of the chute providing for inexpensive replacement of worn sections.
Other past art patents examined in the search which taught telescopic chute structures were considered indicative of telescopic chutes, and having similar problems associated therewith as previously presented in the Oury and Chapdelaine devices.
Also typical of dispensing chutes is the location of the control levers or switches for manipulating the position of the chutes, whether of the telescopic type or more conventional hook-together type chute. Typically, controls are permanently located in fixed locations on the truck. The truck does not seem to be the ideal position for controlling movement of the chute when the dispensing end of the chute may be twenty feet away, and already has a person standing there attempting to monitor the discharge from the chute.
None of the previously mentioned past art devices described power actuated telescopic chutes having replaceable liners. Some vaguely suggest replacement of the entire individual sections of the chute, and not specific components of the chute sections which wear out more quickly than others, such as the interior of the trough which contacts the concrete, or the guide and support track components.


An X-ray lens arrangement for forming a radiation pattern as a focal track is disclosed. The pattern comprises at least one 3-dimensional focal track of radiation. The aforesaid lens arrangement has a main axis passing through intensity weighted centroids of the X-ray source and the pattern. The lens arrangement includes at least one reflecting surface of continuously varying Rowland arcs. Each point belonging to the focal track is linked to each elemental point composing an emitting surface of said source by a corresponding Rowland arc.

According to conventional radiation therapy, a radiation beam is directed towards a tumor located within a patient's body. The radiation beam delivers a predetermined dose of therapeutic radiation to the tumor according to an established therapy plan. The delivered radiation kills tumor cells by causing ionizations within the cells. In this regard, radiation therapy systems are designed to maximize radiation delivered to the tumor while minimizing radiation delivered to healthy tissue.
U.S. Pat. No. 6,389,100 discloses a modular X-ray lens system for use in directing X-rays comprising a radiation source which generates X-rays and a lens system which directs the X-ray beam. The X-ray lens system is configured to focus X-rays to a focal point and vary the intensity of said focal point.
U.S. Pat. No. 7,068,754 discloses an X-ray apparatus including a ring anode to emit radiation, and a conical monochromator to monochromatize the emitted radiation. An outer diameter of the ring anode is greater than an outer diameter of a base of the monochromator.


A method and an apparatus for mitigating electrical failures caused by intrusive structures. Such structures can be tin whiskers forming on electrical circuits. In an illustrative embodiment, nano-capsules are filled with some type of insulative and adhesive fluid that is adapted to bind to and coat an intrusive structure, e.g., a whisker, making the whisker electrically inactive and thereby reducing the electrical faults that can be caused by the whisker. In another illustrative embodiment, randomly oriented nano-fibers having an elastic modulus higher than tin or any other whisker material is used to arrest a growth or movement of a whisker and further reduce a likelihood that a whisker can cause an electrical fault.

The invention relates to the sensing or detection of undesirable structures or intrusion events, such as tin whiskers, a tampering event, or an attempt to create a counterfeit device through alteration or unauthorized use of an electronic device, using a variety of structures and processing techniques. Current types of conformal coatings as applied on circuit boards are not able to prevent undesirable structure growth, such as tin or other whisker growth, through them. Furthermore, the undesirable structures that grow from current conformal coatings are problematic since they can create many short circuits and failures by conducting undesired current through them. One aspect or embodiment of the invention addresses this issue by providing a nano-fiber textile matrix above the conformal coated circuit board or by providing a conformal coat possessing a material such as a nano-fiber textile. Another embodiment of this invention utilizes encapsulating structures such as micro- or nano-tubes or micro- or nano-capsules containing a chemical fluid, such that when the undesirable structure ruptures the encapsulating structures, the fluid coats the undesirable structure with an electrically insulative layer. Thus, if the whisker emerges from the coating surface, it will have an electrically insulating coating material on its surface, rendering it electrically inactive and preventing electrical conduction.
Additional features and advantages of the present invention will become apparent to those skilled in the art upon consideration of the following detailed description of the illustrative embodiment exemplifying the best mode of carrying out the invention as presently perceived.

Structures and methods related to detection, sensing, and/or mitigating undesirable structures or intrusion events on structures

The United States of America as represented by the Secretary of the Navy


An example method of memory management in a computing system having a plurality of processors includes: receiving a first memory allocation request at a memory manager from a process executing on a processor of the plurality of processors in the computing system; allocating a local memory pool for the processor from a global memory pool for the plurality of processors in response to the first memory allocation request; and allocating memory from the local memory pool for the processor in response to the first memory allocation request without locking the local memory pool.

A computer system has multiple processes executing thereon that accomplish various tasks. Some processes are intrinsic to an operating system (OS), other processes are related to specific services or applications, while still other processes are related to specific components of the computer system. A computer system may further be virtualized by executing multiple virtual machines (VMs) managed by a hypervisor. Each VM can provide a specific service or accomplish a specific task.
Memory management algorithms are critical parts of computer systems. A computer system or VM has a finite amount of memory that must be shared across the different processes. Traditional allocation schemes typically reserve a fixed amount of memory for each process, which may result in over-provisioning for one process while exhausting memory for other processes. Another approach is to maintain a single global memory reservation pool and allow all components to compete for memory. Although this approach does not waste memory, the approach results in high contention for memory among the processes.

Concurrent memory management in a computing system


The invention relates to water dispersible extract preparations derived from water soluble components of Labiatae family plant material, including plant material hay and previously extracted or spent hay, which possesses beneficial oral care properties, methods of their manufacturing and application of the preparations in oral care products.

The botanical family known as Labiatae is commonly referred to as the mint family. Labiatae herbs include such genera as Salvia (sage), Rosmarinus (rosemary), Mentha (mint), Ocimum (basil), Thymus (thyme), Marrubium (hoarhound), Monarda (horse-mint), Trichostema (bluecurls), Teucrium, Hyptis, Physostegia, Lamium (henbit), Stachys, Scutellaria (skullcap), Nepeta (catmint). Members of the Verbenaceae family include Lippia (Mexican Oregano) and Lycopus.
Labiatae herbs are well known for the aromatic volatile or essential oils in their foliage, which oils are used in perfumes, flavorings, and medicines. Among the more important essential oils are those derived from sage, lavender, rosemary, patchouli, and the true mints. Members of the Labiatae family have been used for medicinal purposes, for example catnip, pennyroyal, hyssop, bee balm, yerba Buena and the true mints.
Typically, medicaments derived from members of family Labiatae utilize oil extracts from plants. In particular, antimicrobial compositions can be formulated by combining extracts of an essential oil with an organic acid or a Group I salt. It is believed that antimicrobial activity may be attributed to the presence of organic phenolic compounds, such as isopropyl-o-cresol, (5-isopropyl-2-methylphenol) and/or isopropyl-cresol (5-methyl-2[1-methylethyl]phenol) in the oil extract from the plants.
The natural compound menthol (essential oil alcohol) can be purified from the essential volatile oils of members of the Mentha genus. Menthol (1-Methyl-4-isopropyl cyclohexane-3-ol, or hexahydrothymol) is used in numerous products for its pleasing taste, aroma, and pharmacological properties. Menthol is known to have significant antibacterial activities and has been used in herbal treatments to cure internal and external infections.
Labiatae plants contain two other chemical compounds in their volatile oils which are known to possess antimicrobial activities. These are commonly referred to as carvacrol (5-isopropyl-2-methylphenol or isopropyl-o-cresol) and thymol (5-methyl-2[1-methylethyl]phenol or isopropyl-cresol). Both substances are monoterpene phenolic compounds and are potent antimicrobial agents. Typically, carvacrol and thymol can be synthetic or obtained from the oil extract of Labiatae plants.
Labaiate plants contain a number of phenolic compounds, such as eriocitrin, luteuolin-7 rutinoside, hesperoside, rosmarinic acid. (Duban F. et al., (1992) "Aromatic and polyphenolic composition of infused peppermint, Mentha x. piperita L." Ann. Pharm. Fr. 50(3):146-55). The polyphenols are known to demonstrate antioxidant activity and are predominantly found in the aqueous or organic extracts of Labiatae plants.
Cells of Mentha plants are also known to contain a number of water-soluble polysaccharides, primary pectins, identified as (1-->3)-linked galactan carrying arabinosyl residues on C-6 and (1-->4)-alpha-linked galacturonan partially interspersed with (1-->2)-linked rhamnosyl residues (Maruyama K, et al., (1998) "Pectins in extracellular polysaccharides from a cell-suspension culture of Mentha"; Biosci Biotechnol Biochem. 62(11):2223-5). Other polysaccharide constituents are xyloglucans, containing xylose, glucose, arabinose, galactose, mannose and fucose residues. (Maruvama K, et al., (1996) "O-acetylated xyloglucan in extracellular polysaccharides from cell-suspension cultures of Mentha." Phytochemistry 41(5): 1309-14).
Plants of the Labiatae family are highly valued for their essential oils. Components derived from the plant material, other than the essential oils, are also desired. Methods for isolating water soluble components from Labiatae plant materials are disclosed in U.S. Pat. No. 5,908,650 to Lenoble, et al. Lenoble, et al. describe a process of preparing a water-soluble rosemary extract by extracting rosemary leaves into water and acidifying the extract. The acidified crude extract is then loaded onto a reversed-phase media to remove undesirable components (e.g., polysaccharides, salts, and insoluble compounds). The desired fraction is then washed off the column. The isolated product contains a significant amount of flavonoid glucuronides and glycosides in addition to the antioxidant rosmarinic acid. Furthermore, the material isolated by the Lenoble, et al. method contains too much flavor and color to be suitable in certain applications.
A method of producing an improved water-soluble plant extract of one or more antioxidant compounds from Labiatae plant material is disclosed in Bailey, et al. (U.S. Published Patent Application No. 2003/0138537). The process disclosed in Bailey, et al. generally includes hot water extraction of the plant biomass for several hours, followed by acidification of the water extract and extraction of the antioxidant compounds into a water-immiscible organic solvent. Bailey, et al. describe an improved purification scheme for antioxidant compounds from Labiatae family plant material and is selective for the purification of antioxidants through acidification. Bailey, et al. discuss that a higher percentage of the desired antioxidant compound could be isolated by converting it to the protonated at low pH (below pKi) form and resulting in a higher percentage which is recovered in the water-immiscible organic solvent. The extract may be further processed to remove remaining trace amounts of compounds responsible for the taste, odor, and/or color which may be undesirable in certain commercial applications.
Commercial applications for Labiatae family plant extracts include the flavoring agents, flavor stabilizers, pigment stabilizing agents and antimicrobial agents. Labiatae-derived essential oils are used in dental care preparations primarily as flavoring agents and for the antimicrobial benefits afforded from the carvacrol and thymol components in the oils. As the Labiatae essential oils often impart strong organoleptic characteristics, it is desired to provide a composition for oral care which does not impart unwanted flavors in the oral care composition.
The aims of oral care are to prevent and/or treat dental diseases as well as provide cosmetic benefits.
Dental caries is an oral disease caused by bacterial pathogens and it affects hundreds of millions of people worldwide. The primary pathogens responsible for colonizing the oral cavity are the bacteria Streptococcus mutans and Streptococcus sorbinus.
Caries are understood to result from the accumulation of plaque on the teeth and production of organic acids (plaque acids) when plaque bacteria ferment sugars and starches in food residue left behind in the oral cavity. Before being washed away by saliva, the acids accumulate in the plaque long enough to lower the pH and to cause some of the enamel, a calcium-phosphorous mineral known as hydroxyapatite, to dissolve, that is, demineralize, which can lead to dental caries (tooth decay), and tooth sensitivity. Thus, the reversed process, re-mineralization, is an extremely important objective in the fields of preventive and restorative dentistry.
Another factor of cariogenesis is the accumulation of plaque bacteria which extracellularly produce glucosyltransferase (GTF) enzymes, which enzymes catalyze formation of glucans from sucrose. These glucans cover tooth surfaces and serve as the backbone of dental plaque. Plaque formation also involves the participation of a number of other opportunistic bacteria which are capable of attaching to the glucans and colonizing the tooth surface.
Glucosyltransferases are expressed and secreted by oral pathogens such as Streptococcus mutans and Streptococcus sobrinus. The GTF enzymes share a high degree of homology, and consist of two functional domains—catalytic and glucan binding, (Monchois V. et al, (1999) "Glucansucrases: mechanism of action and structure-function relationships" FEMS Microbiology Reviews 23:131-151). It is known that some low molecular weight inhibitors of GTF, such as 6-deoxysucrose, act through interfering with the catalytic domain of GTF. It is known that oligosaccharides or polysaccarides other than glucans can bind GTF and act as acceptors. To inhibit GTF activity, it may be desirable to obtain oligosaccharides or polysaccharides which are capable of binding with GTF, but are not able to serve as an acceptor for nascent glucan synthesis in plaque formation. Consequently, oral care preparations comprising such polysaccharides may be effective for preventing or reducing cariogenesis.
A method of preventing the formation or aggravation of dental plaque by inhibition of GTF activity is disclosed in U.S. Pat. No. 5,204,089 to Hara, et al. Inhibition of GTF activity is demonstrated with selected polyphenols derived from tea.
Inhibition of GTF activity by polyphenol compounds derived from the fruits of the Rosaceae family is disclosed in U.S. Pat. No. 5,853,728 to Tanabe, et al. The polyphenol derived from the fruits of Rosaceae family belongs to a group of plants having the highest free radical erasing activity among those reported for vegetable extracts evaluated. The polyphenol derived from the fruits of Rosaceae contains simple polyphenol compounds including caffeic acid derivatives, p-coumaric acid derivatives, flavan-3-ols, flavonols, dihydrochalcones, and condensed tannins. Polyphenols are disclosed to hinder the activity of glucosyltransferase produced by oral Streptococcus, specifically inhibiting the formation of deposit which is an important factor of dental caries. (Japanese Patent Application Laid-open No. 285876/1995). The disclosed function of the polyphenols also include antiallergic activity, ultraviolet light absorbing activity and free radical erasing activity for skin cosmetic material, and anticariogenic activity and deodorant activity for toothpaste.
Thus, a strategy for managing oral infections, besides mechanical removal of the formed plaque, may be based on application of antimicrobial agents, agents capable of inhibition of GTF, or their combination.
While there are a number of synthetic compounds on the market with anti-calculus properties, it is preferable that these agents be classified as "natural", or even more preferably, as "Generally Recognized as Safe" (GRAS). Various pharmaceuticals for inhibiting cariogenesis have been proposed; however, there is still a strong demand toward developing a pharmaceutical preparation which is unlikely to cause harmful side effects to the human body because it is derived from naturally occurring sources.
Associated with dental disease may be some form of inflammation at the tooth/gum interface. Inflammation or the inflammatory process is a natural result of an insult to soft tissue, usually resulting in vascular, cellulovascular and/or tissue fibrosis. Such physiological manifestation of inflammation has been attributed to the release of cytokines and other messengers such as serotonin, prostaglandins, bradykinin, leukotrienes, histamine, and substance P.
Inhibition of prostaglandin production is a mechanism which has been exploited in the treatment of inflammation. Typical inhibitors of prostaglandins include non-steroidal anti-inflammatory drugs (NSAIDs); however, these substances are not without side effects. NSAIDs are known to inhibit prostaglandin production by inhibiting enzymes in the arachidonic acid/prostaglandin pathway including, particularly, cyclooxygenase (COX). Recently, research has identified a cylcooxygenase subtype, COX-2, inhibition of which is highly effective in inhibiting inflammatory processes and which inhibition results in minimal untoward side effects. So-called COX-2 inhibition is therefore a popular target for treating/preventing inflammation, including inflammation associated with dental disease.


A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer gate, and a second implantation of implanting ions into a portion below a second transfer gate in a direction different from a direction of the first implantation.

1. Field of the Invention
The present disclosure includes disclosure which relates to a solid-state image sensor, a method of manufacturing the same, and a camera.
2. Description of the Related Art
Patent literature 1 (Japanese Patent Laid-Open No. 6-209099) discloses the arrangement of a CCD solid-state image sensing element, and a method of manufacturing the same. A solid-state image sensor described in patent literature 1 has an N+-type impurity layer 5 isolated by a P++-type channel stopper layer 8 formed near the surface of a substrate, and an N−-type impurity layer 6 formed under transfer gate electrodes 10 to be adjacent to the N+-type impurity layer 5. In the manufacturing method described in patent literature 1, after the P++-type channel stopper layer 8 is formed near the surface of the substrate, phosphorus ions are implanted, into the region where a plurality of photoelectric converters are to be formed between a pair of transfer gate electrodes 10, at an implantation angle of 15° to form the N−-type impurity layer 6. At this time, phosphorus ions are implanted into the portion below one of the pair of transfer gate electrodes 10. Then, phosphorus ions are implanted, into the region where a plurality of photoelectric converters are formed between a pair of transfer gate electrodes 10, at an implantation angle of 15° to form the N+-type impurity layer 5and N−-type impurity layer 6. At this time, phosphorus ions are implanted into the portion below the other of the pair of transfer gate electrodes 10.
In the solid-state image sensor described in patent literature 1, the N+-type impurity layer 5 is isolated by the P++-type channel stopper layer 8 formed near the surface of the substrate, but the N+-type impurity layer 5 extends across a plurality of photoelectric converters under the P++-type channel stopper layer 8. Therefore, signals may mix between a plurality of photoelectric converters (pixels), thus leading to degradation in resolution and a mixture of colors.

Solid-state image sensor, method of manufacturing the same, and camera


In one embodiment, a blank safety device is provided that includes: a body defining a cylindrical bore having a closed distal end, the body also defining an proximally extending internal cavity in communication with the cylindrical bore; a bullet plug received within the cylindrical bore, the bullet plug being configured to distally displace within the cylindrical bore towards the closed distal end in response to the impact of a fired bullet; and a back section received within the internal cavity in the body, the back section defining an internal chamber that is sealed with respect to a proximal bore for receiving a firearm attachment.

1. Field of the Invention
The present invention generally relates to firearm attachments and more particularly to adapters for firing blanks.
2. Related Art
Given the danger and cost of using live ammunition, it is common for military and police training to take place using blanks. But the use of blanks is associated with the risk that an operator of a firearm may actually fire real rounds. Firing a live round can cause an extremely perilous situation for the operator of the firearm, people around the person operating the firearm, and in some cases people down range of the firearm in situations such as on a film set where the firearm is to be used as a prop.
Thus, it is conventional to equip the firearm used for blank ammunition training with a blank firing adapter that prevents the user from chambering or firing a live round. In general, when a projectile is passed through the barrel of a firearm, there is a certain amount of back pressure which is utilized in normal operation to operate the action of a rifle such as a semi-asthmatic action and a gas piston system, or in a simple gas system such as in the AR-15. When only a blank is fired, the amount of gas pressure is less without having the accelerating bullet positioned in front of the expanding gas.
Accordingly there is a need in the art for a blank firearm adapter that provides sufficient gas pressure to the firearm during normal usage but prevents fired live rounds from exiting the firearm adapter.


A pipe thickness measuring device 10 is provided, including a luminance profile obtaining unit obtaining luminance profiles of radiographic images of a pipe to be measured in a direction crossing the pipe, an outer diameter point detecting unit detecting outer diameter points of the pipe based on the obtained luminance profiles, a region setting unit setting a predetermined region inside two of the outer diameter points of the pipe detected by the outer diameter point detecting unit, and an inner diameter point detecting unit detecting inner diameter points of the pipe based on a luminance profile corresponding to the set predetermined region from among the luminance profiles obtained by the luminance profile obtaining unit.

1. Field of the Invention
The present invention relates to a pipe thickness measuring device and method, and recording medium and, in particular, to a technology of measuring a pipe thickness by using radiographic images of a pipe for the purpose of non-destructive inspection.
2. Description of the Related Art
Conventionally, as a device for measuring the thickness of a cylindrical body (hereinafter referred to as a "pipe") by using radioactive rays, a device has been suggested, the device in which a sensor is located in a position where radioactive rays is emitted in parallel to a pipe tangential direction and where the radioactive rays having passed through the center of the pipe enters, and a pipe thickness is measured based on a amount of transmission radiation detected by the sensor (Japanese Patent Application Laid-Open No. 2009-36708).
Also, as a method of measuring a concrete thickness in a steel pipe configured by filling the inside of the steel pipe with concrete by centrifugal force, a method has been suggested in which: brightness information of each of radiographed images with different lengths of X-ray irradiation time is extracted; brightness distributions of the extraction results of the brightness information with a short irradiation time and the brightness information with a long irradiation time are combined; and an outer diameter of the steel pipe and an inner diameter of the concrete are estimated from an inflection point of the brightness distributions, thereby measuring a concrete thickness (Japanese Patent Application Laid-Open No. 2005-257610). Note that a known value or a value separately measured is used as the thickness of the steel pipe.
That is, in an image obtained by short-time X-ray irradiation, both edges of the steel pipe is clearly shown, but it is difficult to judge the state of the inside. On the other hand, in an image obtained by long-time X-ray irradiation, both edges of the steel pipe is blurred and unclear. To solve this problem, in the invention described in Japanese Patent Application Laid-Open No. 2005-257610,radiography with different lengths of X-ray irradiation time are performed to obtain images.
Also, it has been suggested that, in an X-ray CT device for constructing a tomogram of a subject to be shot along any slice surface, when a dimension between two edges specified on the tomogram is measured, position information of each edge is extracted from a differential value of line profile of CT values to a direction connecting the edges (Japanese Patent Application Laid-Open No. 2008-185359).

Pipe thickness measuring device and method, and recording medium


A motorcycle tire comprises a tread portion provided with a block pattern. The block pattern comprises block groups each consisting of at least five blocks Bg arranged along an oblique zone X so that the centroids M of the treads of the blocks Bg are positioned within the oblique zone X. The oblique zone X has a width of not more than 4 mm. The oblique zone X is inclined at an angle α of from 1 to 10 degrees with respect to the tire circumferential direction.

The present invention relates to a motorcycle tire, more particularly to a block tread pattern capable of satisfying both of grip performance on hard ground surface and grip performance on soft ground surface at a highly sophisticated level and suitable for riding on rough terrain.
In a motorcycle tire for riding on rough terrain, for example, for use in motocross, the tread portion is usually provided with a block pattern.
When riding on hard ground surface, for example, dry unpaved road surface, such block pattern tire exert its grip performance by digging edges of the blocks into the ground surface, namely, by the edge effect of the blocks.
From a standpoint of increasing the edge effect, it is desirable that blocks are arranged so as to stagger along circumferential lines parallel with the tire circumferential direction, namely, not to align in the tire circumferential direction.
When riding on soft ground surface such as muddy unpaved road, it is desirable for better grip performance to allow the blocks to penetrate into the soft ground surface by facilitating the ejection of mud or soil plugged between the blocks.
From a standpoint of facilitating the ejection of mud or soil, it is desirable that the blocks are arranged in circumferential rows to form a circumferentially continuously extending grooved part (linear groove) between the block rows.
In this case, however, the edge effect is sacrificed and the grip performance on hard ground surface is deteriorated.
Thus, it is difficult to satisfy both of the grip performance on hard ground surface and the grip performance on soft ground surface (muddy road).


Automatic hair and scalp treatment machines are known which include a bowl, and a closure therefor, adapted to enclose the head with the face outside the closure. Also included are spray manifolds on an oscillating arcuate header, and driving means imparting partial rotation to the arcuate header. It has been found that dermatoses characterized by the formation of skin cells too rapidly to be eliminated, such as psoriasis, can be treated with this apparatus. Without the machine, removal of the dead cells or plaques is both time consuming and messy. In this treatment it is desirable to begin with low pressure sprays, and increase the pressure to the maximum which the patient can tolerate. One form of apparatus which could be used for this purpose is the machine disclosed in U.S. Pat. No. 4,834,121. In that prior art device the pressure regulator was a conventional regulator ahead of the header. By this invention an adjustable pressure means is provided.

This invention, in one of its aspects, pertains to apparatus for treating hair and scalp. In another of its aspects the ivention pertains to improvements in the machine characterized in earlier U.S. Pat. No. 4,834,121.
As described in copending application entitled Treatment of Dermatoses it has been foun that dermatoses known as papulosquamous are characterized by the formation of skin cells too rapidly to be eliminated. An example of such diseases is psoriasis. Since the causes and cures of these diseases are not well understood, efforts have been directed to their treatment rather than to their cures. In order to be effective, treatment must first include removal of the scales or plaques. This removal process is both time consuming and messy. The copending application is based upon the discovery that spray can be used to remove the plaques. One form of apparatus which could be used for this purpose is the machine disclosed in U.S. Pat. No. 4,834,121. However that apparatus is a machine operating at a single pressure in the range of 80 psi to 120 psi. As pointed out in that patent the output from a pressure pump flows through a pressure regulator, and at that desired system pressure the fluid flows to spray manifolds. The pressure regulator thus is a conventional regulator which is spring loaded to respond to a pressure drop. Such pressure regulators are responsive to small or sudden changes in incoming fluid pressures, but they operate at a single fixed outlet pressure.
In the treatment of papulosquamous dermatoses it is desirable to begin with low pressure sprays, and increase the pressure to the maximum which the patient can tolerate. Some skin is more sensitive than others. Hence it is preferred to adjust the pressure so that abrading of the plaques can be accomplished without harming bruising or cutting the skin. By this invention such an adjustable pressure means is provided.

Pressure means for automatic hair and scalp treatment apparatus


When a power supply is cut off on updating programs, improper data remains since the power source to be supplied to the vehicle-mounted device is unstable. The check for the improper data and restoration processing are required for a reactivation processing implemented by an update processing unit so that the update is completed correctly, therefore, the user is waited. In contrast, the update processing also implemented by the update processing unit for a time period during which the power source becomes unstable is interrupted, and implemented for the time period during which the power source voltage is stable. The power source voltage is considered to be unstable based on a function of the vehicle speed, brake pedal actuation, parking brake actuation, and/or power source activation. In consequence, the update processing is carried on steadily without making the user wait.

The subject matter disclosed in this description relates to an online update method for vehicle-mounted device.
In the past, it has been difficult to update a function of software and correct its trouble for a vehicle-mounted device which once came onto the market, in the case that the device has no online update function in the software. Specifically, the update of function has been implemented by using update CDs and SD memories selling or distributing in the market in the past, therefore, there is a problem that such media is not circulated around users who are not registered as a user registration or people using a used car. Further, it has taken a lot of time to deliver an update notification by mail, or CD and SD memory by other delivery companies.
In a method of solving the above-mentioned problem, there exists a method referred to as an online update in which a program is downloaded via a network to update the program. For example, the update for the vehicle-mounted device providing an online update function can be notified to all of the vehicle-mounted devices coupled with a network via another network by using the configuration of online update as disclosed in JP-A-2003-122575 ([0002]-[0011]). Further, the update can be started immediately by requesting the update and receiving the notification from the user of vehicle-mounted device, therefore, it does not take a time for the start and delivery. As mentioned above, it is not required to select a time and location, for updating the program and data in the vehicle-mounted device providing the online update function in which the program and data are downloaded to implement the update, therefore, the update becomes easily.

Online update method for vehicle-mounted device


A method for manufacturing lignin for carbon fiber spinning, comprising subjecting to heat treatment in a non-oxidizing atmosphere a phenolated lignin obtained by phenolation of lignin dissolved out in delignification of a woody material, or a phenolated lignin derived from digestion of a woody material with a phenol.

1. Field of the Invention
The present invention relates to a method for manufacturing a lignin for continuous carbon fiber spinning by a heat-fusion process, employing lignin as a starting material, which is contained in woody material in an amount of about 20 to 30%.
Nowadays comprehensive studies are being made on separation or modification of cellulose, hemicellulose and lignin from woody resources for the purpose of utilizing such materials as food, forage, and chemical industrial starting materials. In certain fields, development for industrialization is going on. In the field of pulping technology, new organic solvent digestion processes are extensively studied, where an alcohol, a phenol, acetic acid, or the like are used as the digesting agent. However, success of these new technologies depends upon the accomplishment of effective utilization of lignin.
2. Description of the Related Arts
One technology of converting lignin to industrial materials of high added value relates to manufacture of carbon fiber therefrom.
One prior art publication regarding lignin carbon fiber relates to lignin-poval type carbon fiber proposed by Professor Ohtani of Gumma University on 1963. See Japanese Patent Publications No. 15727/1966, and No. 26356/1967. This process is characterized by drawing out thread from a spinning solution prepared by heating and dissolving lignin (of industrial grade) and polyvinyl alcohol in a highly concentrated aqueous NaOH solution. This process was replaced by PAN type and pitch type carbon fiber because of the cost and the properties. After 20 years therefrom, the present inventors proposed a process for manufacturing lignin for continuous spinning by hydrogenolysis, and heating lignin obtained by digestion and explosion-disintegration of wood, as well as a process of producing carbon fiber therefrom. See Japanese Laid-Open Patent Application No. 110922/1987. The carbon fiber of the former process has disadvantages such that the manufacturing cost is high because of the wet spinning process and high temperature treatment at 1400.degree. C. or higher for vaporizing-off sodium, and the product is significantly low in strength characteristics. The latter of the above processes is now under study for industrialization. This process involves the problems of high capital cost resulting from high energy consumption and use of pressure vessels in hydrogenolysis in the spinning-lignin preparation process, and low yield of the carbon fiber.

Method for manufacturing lignin for carbon fiber spinning

Forestry and Forest Products Research Institute, Ministry of Agriculture, Forestry and Fisheries


A system, method and a computer-readable medium for load balancing patch processing pre-tessellation are provided. The patches for drawing objects on a display screen are distributed to shader engines for parallel processing. Each shader engine generates tessellation factors for a patch, wherein a value of generated tessellation factors for the patch is unknown prior to distribution. The patches are redistributed to the shader engines pre-tessellation to load balance the shader engines for processing the patches based on the value of tessellation factors in each patch.

1. Field of the Invention
The embodiments are generally directed to tessellation in a graphics pipeline. More particularly, the embodiments are directed to balancing a workload in the graphics pipeline pre-tessellation.
2. Background Art
Display images comprise thousands of dots, where each dot represents one of thousands or millions of colors. These dots are known as picture elements, or "pixels". Each pixel has multiple attributes, such as, color and texture attributes. Those attributes are manipulated and processed before being rendered on a display screen of an electronic device.
Pixels form graphical objects. Example graphical objects include points, lines, polygons, and three-dimensional (3D) solid objects. Points, lines, and polygons represent rendering primitives which are the basis for most rendering instructions. More complex structures, such as 3D objects, are formed from a combination or a mesh of such primitives. To display a particular scene, the visible primitives associated with the scene are drawn individually by determining pixels that fall within the edges of the primitives and manipulating the attributes that correspond to each of those pixels.
Because there are thousands, if not millions of primitives, the inefficient processing of primitives reduces system performance when complex images are rendered on a display screen. Conventional graphics pipelines process generated primitives from patches that include instructions for displaying pixels on a display screen. The patches, depending on size, are divided or combined into prim groups. Each prim group is sent to a shader engine for processing. A shader engine performs tessellation on each patch, and converts control points in each patch to multiple primitives. The number of primitives in each patch depends on a tessellation factor. A tessellation factor may be greater for patches processed by one shader engine in comparison to other shader engines. For example, the tessellation factor is greater for patches that appear closer on the display screen than the patches that appear further on the display screen.
Because tessellation occurs after patches are distributed to shader engines, the shader engines become unbalanced pre-tessellation. This causes one shader engine to process thousands of primitives, while other shader engines remain idle.

Load balancing for optimal tessellation performance


A method, computer program product, and visual display apparatus include a processor(s) obtaining, via a camera device, a unique identifier, wherein the unique identifier was captured by the image capture functionality of the camera device during a given temporal period. Based on the unique identifier, the processor(s) determines an application, where a graphical user interface of the application, when rendered through a client during the given temporal period, displayed the unique identifier (and was captured by the camera device). The processor(s) obtain, from the camera device, identifying data relevant to a user associated with the camera device. Based on the unique identifier and the identifying data, the processor(s) provides content targeted to the user.

Personal cameras, and specifically, head mounted cameras, once a somewhat onerous accessory reserved for extreme sporting excursions, are now becoming an easily wearable (or an easy to carry) accessory for every day and every situation, including professional situations. The advances in this area, as far as ease of wearing or use, allow the users to experience the advantages of head mounted cameras, and other personal devices with integrated cameras, in many different settings. The advances in image capture technologies enables a user both to capture what is occurring in the physical environment but also to connect more easily with the virtual world.

International Business Machines Corporation


A worm drive clamp comprises a worm drive member and a unitary strap and housing member. The worm drive member has a cylindrical body with a thread, a pawled portion below the body, and a head suitable for turning by a driver such as a hex nut driver. The worm drive member is situated in a chamber defined by the housing. The bottom wall of the housing has a ratcheted recess that interacts with the pawled portion to prevent counterclockwise rotation of the drive member. As the strap is passed upwards through a slot in the housing, grooves on the strap engage the thread of the worm drive member so that the strap is drawn upwards as the worm drive member is rotated clockwise.

This invention relates to clamping devices of the worm drive type, and specifically, to a clamping device having a worm drive that is capable only of being tightened, and which cannot be loosened.
Worm drive clamps are used in a wide variety of industrial and other applications to tighten and loosen a band or strap in a circular direction. Such clamps may be used, for example, to provide a tight closure between two nesting tubes of similar, but slightly different, diameter, or to close a container having a flexible opening. A worm drive clamp typically comprises a worm drive member, or gear, having a spiral thread, a housing in which to situate the worm drive member, and a flexible strap that is fed through the housing and that has grooves or slots provided thereon that engage the spiral thread and cause the clamp to be tightened as the worm drive member is rotated.
Of particular interest to the present application is the use of worm drive clamps to close securely currency bags. These bags, typically made of a heavy cloth such as burlap, are used by banks and other financial institutions to transport hard currency, typically from one branch to another. Because these bags are filled by hand by bank or security personnel, it is important that the clamp be capable of being closed and sealed in an easy and efficient manner. Yet, given the application, it also is important that the clamp, once tightened, not be prone to being loosened while in transit.
There also exists a need in applications involving cloth or otherwise flexible containers for a clamp having a secondary hold on the container. Particularly with respect to thin plastic containers such as refuse bags, a clamp that appears to be fully tightened may later be effectively loosened as portions of the plastic gathered against each other by the clamp slip outside of the clamp.
In addition, since currency bags are re-used and different denominations of currency may be carried by the same bag at different times, it would be advantageous for the worm drive clamp to be able to indicate the contents of the bag. It also would be advantageous to keep to a minimum the number of separate parts required for the clamp.
Accordingly, it is an object of the present invention to provide a worm drive clamp suitable for closing the open end of a flexible container such that the clamp may be tightened, but may not be loosened.
It as another object of the present invention to provide a worm drive clamp having a strap and housing comprising a unitary member.
It is a further object of the present invention to provide a worm drive clamp having a strap that includes a tab portion to permit easy identification of the contents of the container sealed by the clamp.
It is a further object of the invention to provide a worm drive clamp having a strap that has penetrating members disposed on its inner surface such that as the clamp is tightened the penetrating members will pierce or otherwise lodge in the container material to hinder portions of the container material from accidentally slipping free from the clamp.
The foregoing objects are achieved in the present invention by a worm drive clamp comprising a worm drive member and a unitary strap and housing member. The worm drive member has a body with a spiral thread, a head above the body, a pawled portion below the body, and, preferably, a knob disposed below the pawled portion. The housing has a ratcheted recess adapted to engage the pawled portion of the worm drive member, as well as slot for receiving the end of the strap. The housing also has, preferably, a hole in its bottom wall to allow penetration by the knob of the worm drive member.
The end of the strap is inserted into the slot until grooves provided on its inner surface engage the thread on the body of the worm drive member. Then, as the head is rotated clockwise, the thread acts to pull the strap further through the slot, tightening the clamp. Meanwhile, the pawled portion of the worm drive member is engaged with the ratcheted recess of the housing so as to prevent rotation in the opposite direction. Thus, the clamp may be tightened but it may not be loosened.


According to a first aspect of the invention there is provided a method of manufacturing an applicator and container arrangement comprising molding an insert from a first material, placing the molded insert into a mold, molding an outer structure from a second material over the molded insert, the second material having limited adhesion to the first material, the outer structure defining a handle portion and a shoulder portion, and having a weakened area between the handle portion and the shoulder portion, providing a body portion in a material compatible with the second material so as to ensure adherence to the shoulder portion of the outer structure, and assembling the outer structure, including the insert, and the body portion. The invention extends to a container and applicator arrangement made in accordance with the method.

There are several issues associated with a conventional mascara package that render it expensive and difficult to produce:
For example, each mascara package typically entails a plurality of manufacturing steps, namely moulding a wiper, moulding a cap, possibly moulding a stem, moulding a container, possibly assembling the cap and stem, assembling the wiper and container, possibly manufacturing a separate applicator (such as a wire brush) and assembling this applicator to the stem and then, finally, assembling the cap and stem, and container and wiper. Clearly, such a process is cumbersome, time-consuming and highly inefficient. In particular manufacturing step, a wiper has to be manufactured separately and assembled to the container. The wiper has to correspond and conform very carefully to the dimensions of the container and the diameter of the applicator stem inserted through the wiper. Once the package has been used, the assembled wiper has a tendency to separate from the container, due to lubrication and infiltration of the mascara.
In addition, these containers are typically manufactured using injection blow moulding, which is a relatively slow process with between 50-60 of these containers being able to be made per minute.
There exists therefore a need for a container and applicator arrangement for a cosmetic product that is relatively inexpensive, reusable and quick to manufacture.

Container and applicator arrangement for a cosmetic product, and associated method of manufacture