The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses, methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.

The technology of making interconnections to provide for vias, lines and other recesses in semiconductor chip structures, flat panel displays, and package applications has been developed for many years. For instance, in developing interconnection technology for very-large-scale-integrated (VLSI) structures, aluminum has been utilized as the primary metal source for contacts and interconnects in semiconductor regions or devices located on a single substrate. Aluminum has been the material of choice because of its low cost, good ohmic contact and high conductivity. However, pure aluminum thin-film conductors have undesirable properties such as a low melting point which limits its use to low temperature processing, possible diffusion into the silicon during annealing which leads to contact and junction failure, and electromigration. Consequently, a number of aluminum alloys have been developed which provided advances over pure aluminum. For instance, U.S. Pat. No. 4,566,177 discloses a conductive layer of an alloy of aluminum containing up to 3% by weight of silicon, copper, nickel, chromium and manganese was developed to improve electromigration resistance. U.S. Pat. No. 3,631,304 discloses aluminum alloys with aluminum oxide which were also used to improve electromigration resistance.
Recently developed ULSI technology has placed more stringent demands on the wiring requirements due to the extremely high circuit densities and faster operating speeds required of such devices. This leads to higher current densities in increasingly smaller conductor lines. As a result, higher conductance wiring is desired which requires either larger cross-section wires for aluminum alloy conductors or a different wiring material that has a higher conductance. The obvious choice in the industry is to develop the latter using pure copper for its desirable high conductivity.
In the formation of ULSI interconnection structures such as vias and lines, copper can be deposited into such recesses to interconnect semiconductor regions or devices located on the same substrate. However, copper is known to have problems at semiconductor device junctions due to its low electromigration resistance. The electromigration phenomenon occurs when the superposition of an electric field onto random thermal diffusion in a metallic solid causes a net drift of ions in the direction of the electron flow. Any diffusion of copper ions into the silicon substrate can cause device failure. In addition, pure copper does not adhere well to oxygen containing dielectrics such as silicon dioxide and polyimide. To fully utilize copper in interconnection technology, the adhesion properties of copper must also be improved.
U.S. Pat. No. 5,130,274, assigned to the common assignee of the present invention, discloses the use of a copper alloy containing an alloying element of less than 2 atomic % by first depositing an alloy into the recess of an interconnection structure and then forming a copper alloy plug and a thin layer of an oxide of the alloying element on the exposed surface of the plug. However, the technique still does not satisfy the more stringent requirements in ULSI structures where critical dimensions of less than 0.5 .mu.m place a considerable burden on thin film chip interconnections. The use of standard Al (Cu) alloy and a silicon dioxide dielectric in a deep-submicron logic circuit wiring structure results in a large circuit delay caused mainly by the wiring connections.
The use of Cu as an alternative material to Al (Cu) in ULSI wiring structures to increase the chip speed has been attempted by others. However, numerous problems are incurred in CU interconnections such as the tendency of Cu to corrode and the fast surface diffusion rates of copper in thin films. It is known that pure Cu has a smaller electromigration activation energy, i.e., 0.5.sup..about. 0.8 eV, than that in Al (Cu) of 0.8.sup..about. 0.9 eV. This implies that the advantage of using Cu for reducing interconnection electromigration failure at chip operating conditions is largely compromised.
A schematic of an enlarged, cross-sectional view of an electronic structure that utilizes conventional interconnections, made of copper alloy is shown in FIG. 1. The electronic structure 10 contains two levels of copper interconnections 12, 16 and one stud level 14 illustrating a copper wiring structure by a Damascene process on a pre-fabricated device 20. The device 20 is built on a semi-conducting substrate 24. As shown in FIG. 1, a typical Damascene level is first fabricated by the deposition of a planar dielectric stack 26. The dielectric stack 26 is then patterned and etched using standard lithographic and dry etch techniques to produce a desired wiring or via pattern. The process is then followed by the metal depositions of a thin adhesion/diffusion liner 18 and copper alloy metallurgy 12 wherein a bottom silicon nitride layer 28 is used as a diffusion barrier that is previously deposited on top of the device 20 to protect against copper diffusion. After the copper alloy interconnection 12 is formed, a top silicon nitride layer 32 is deposited as an etch stop layer for defining the next level copper interconnection 14. After a second level dielectric stack 34 is deposited, a recess for an interconnect is etched into the dielectric layer 34 and the silicon nitride layer 32.
An interlevel copper alloy stud 14 with liner 22 is then deposited by a technique similar to that used in depositing the first level copper alloy interconnection 12. A variety of metal deposition techniques can be used for filling the trench or via. These techniques include a collimated sputtering process, an ion cluster beam process, an electron cyclotron resonance process, a chemical vapor deposition process, an electroless plating process and an electrolytic plating process. Other techniques such as a co-deposition method in which copper and an alloying element are co-deposited can also be used in forming the copper alloys. For instance, such co-deposition methods include co-sputtering, co-plating, co-chemical vapor deposition and co-evaporation. After the completion of the interlevel copper alloy stud 14, another similar process is repeated to form the second level copper interconnection 16 with liner 24 in a third dielectric stack layer 38. An etch stop layer 36 of silicon nitride is utilized between the stud and the second level interconnections. Finally, a top silicon nitride layer 42 is deposited on top of the copper wiring structure 10 for protecting the device from the environment.
Other workers have attempted to use copper alloys in providing enhanced electromigration resistance. For instance, U.S. Pat. No. 5,023,698 teaches copper alloys containing at least one alloying element selected from the group of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn. U.S. Pat. No. 5,077,005 teaches copper alloys containing at least one member selected from In, Cd, Sb, Bi, Ti, Ag, Sn, Pb, Zr and Hf where the weight percent of the alloying element used is between 0.0003 to 0.01. The copper alloys are used in TAB processes and as print circuit board members. U.S. Pat. No. 5,004,520 also teaches copper foil for film carrier application containing at least one alloying element selected from P, Al, Cd, Fe, Mg, Ni, Sn, Ag, Hf, Zn, B, As, Co, In, Mn, Si, Te, Cr and Zn with the alloying element concentrations from 0.03 to 0.5 weight percent. The alloys are used as connecting leads in integrated circuit chip mounting. Furthermore, U.S. Pat. No. 4,749,548 teaches copper alloys containing at least one alloying element selected from Cr, Zr, Li, P, Mg, Si, Al, Zn, Mn, Ni, Sn, Ti, Be, Fe, Co, Y, Ce, La, Nb, W, V, Ta, B, Hf, Mo and C. The alloying elements are used to increase the strength of the copper alloy. U.S. Pat. Nos. 5,243,222 and 5,130,274 teach copper alloys for improved adhesion and formation of diffusion barriers. However, none of these prior work teaches copper alloys that are sufficiently improved for use in ULSI on-chip or off-chip wiring interconnections to meet the electromigration resistance and the adhesion property requirements. Interconnection structures on ULSI devices must provide dense, fully continuous metal wiring in insulator structures with features much less than 0.5 .mu.m in width, and with aspect ratios higher than 1.
It is therefore an object of the present invention to provide an interconnection structure of copper alloy that does not have the drawbacks and shortcomings of conventional copper interconnection structures.
It is another object of the present invention to provide an interconnection structure of a copper alloy that has improved electromigration resistance, adhesion properties and other surface properties.
It is a further object of the present invention to provide an interconnection structure of copper alloy that utilizes a seed layer at the interface between a copper alloy interconnection body and an electronic device it is connected to.
It is another further object of the present invention to provide an interconnection structure of copper alloy by incorporating a copper alloy seed layer sandwiched in between a copper conductor body and an electronic device to which the interconnection is connected.
It is still another object of the present invention to provide an interconnection structure of copper alloy by depositing a copper alloy seed layer prior to the formation of the copper conductor body which contains at least one element of Sn, In, C, Ti, Zr, N, O, Cl or S for improving the electromigration resistance of the interconnection structure.
It is yet another object of the present invention to provide an interconnection structure of copper alloy by depositing a copper alloy seed layer prior to the formation of the copper conductor body which includes at least one element selected from Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, another further object of the present invention to provide an interconnection structure of copper alloy by utilizing a copper alloy seed layer which contains at least one element selected from B, N, P, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Ag, Au, Zn or Cd for improving the surface properties of the interconnection structure.
It is still another further object of the present invention to provide an interconnection system of copper alloy by depositing a metal seed layer sandwiched between a copper conductor body and an electronic device of a metal selected from Ag, Mo, W or Co to improve the copper conductor deposition process.
It is still another further object of the present invention to provide a method for forming an interconnection structure by first depositing a copper alloy seed layer on an electronic device and then forming a copper conductor body on the seed layer such that electromigration resistance corrosion resistance and adhesion of the interconnection structure are improved wherein the seed layer includes copper and at least one element selected from the group consisting of Sn, In, Zr, Ti, C, O, N, Cl and S.

Copper interconnection structure incorporating a metal seed layer

International Business Machines Corporation


A single-step process by which HMLS industrial yarns may be manufactured, in which (a) the solid PETP has a relative viscosity (determined as described below) in the range of 1.8 to 2.1; (b) before spinning, the PETP is mixed with 0.1-0.8% by weight of a bis-(kenenimine); (c) the molten PETP is drawn off from the spinneret orifices at a speed in the range of 1500 to 4000 m/min; and (d) the spun product formed is drawn without intermediate winding at a draw ratio of 1.5 to 4.0, the draw ratio being selected such that the final speed of the yarn is not higher than 6000 m/min.

The present invention relates to the manufacture of industrial yarn, for example, for reinforcement of rubber objects such as automobile tires. It is important that industrial yarns have good thermal dimensional stability, i.e., high modulus (HM) and low shrinkage (LS). For example, for use in the production of tire cords, industrial yarns must have a hot air shrinkage as low as possible, in no event as large as 3.4%. The same is true for production of conveyor belts and rubber hoses, in which similar low shrinkage is necessary to obtain satisfactory results in the modeling step. In order to improve driving comfort provided by tire cords formed of industrial fibers, the modulus should be greater than 30 cN/tex LASE (load at specified elongation) 5%. Accordingly, the industrial yarns manufactured according to the invention are referred to herein as HMLS yarns.
To enhance durability so as to resist severe application conditions encountered, e.g., by large conveyor belts and large tires, industrial yarns must have good fatigue resistance.
It is also necessary that industrial yarns for use in reinforcement (e.g., rubber reinforcement) applications have tenacity in excess of 60 cN/tex. Accordingly, industrial yarns are of linear densities of at least 1000 dtex (preferably at least 1300 dtex) so as to provide adequate breaking tenacity/yarn.
Another important property of industrial yarns is a low elongation at break in comparison to textile yarns.
The HMLS yarns manufactured according to the invention may be processed in a known way into reinforcing cord for automobile tires, and this cord may, in a way which is also known, be provided with a bonding agent, the so-called dip, so that a "dipped cord" is formed. HMLS yarns having said properties may be manufactured in a known way by spinning PETP at a speed of about 4000 m/min into an as-spun yarn of a high degree of orientation, which should thereafter be drawn at a ratio of about 2. This known method has the disadvantage that it cannot be carried out in a single step. For, in that case, the winding speed at the end of the process would have to be at least 6000 m/min. Such a winding speed of industrial yarn in large production units makes demands on the winding equipment which cannot be met, because there are no commercially available winding units capable of winding yarns of linear density greater than 1000 dtex at speeds above 6000 m/min. As a result, in actual practice, a two-step process is used, in which spinning and drawing of the filaments are conducted separately, raising the costs of production.
For a single-step process it would be desirable to provide a technique by which a lower spinning speed in the range of 1500 to 4000 m/min can be selected, whereafter the as-spun industrial yarn thus obtained can be drawn and wound in such a way as to result in a speed of not more than 6000 m/min. It appears that at the usual relative viscosity of the polymer of about 2, the as-spun yarn will display a preorientation which is too low and the desired HMLS properties are not obtained.

Process for manufacturing yarns by meltspinning polyethylene terephthalate


A system and method of construction of unique word sets together with an efficient method of implementing correlation with the members of the set is presented. The set of UWs is constructed by breaking a UW sequence in to equal length segments, and then multiplying this vector by an orthogonal matrix. First an arbitrary vector U is chosen of length K for a set of N UWs. Then a matrix H of size N×N is chosen. The columns of H are then repeated L times to form a matrix H′. The set of N UW consists of the rows of H′UT. N sub-correlations of the N segments of the vector U with the segments of the (suitably delayed) received signal is performed at the receiver. Then the N different outputs are obtained as Z=HCT, where C=[C0 . . . CN-1] is the vector of correlated outputs. The receiver only requires N correlators, each of length L, instead of length K, which provides a less complex and more efficient solution for detection of UW sets.

The present application relates to the field of digital communication systems, in particular, construction and detection of unique word sets in burst mode communication systems.
In conventional burst mode communication systems, a transmitter transmits burst mode signals at a certain frequency, phase and timing, which is received by a receiver through a communication channel. A conventional communication system is discussed below using FIG. 1.
FIG. 1 illustrates a conventional communication system 100.
As illustrated in the figure, conventional communication system 100 includes a transmitter 102, a receiver 104 and a communication channel 106.
Transmitter 102 transmits a burst signal 108 to receiver 104 via communication channel 106. Due to the noise introduced by communication channel 106, such as Additive White Gaussian Noise (AWGN), receiver 104 receives a noisy burst signal 110. Receiver 104 must process the noisy burst signal 110 in order to recover the information transmitted in burst signal 108.
In conventional burst mode communication systems, it is necessary to quickly estimate various parameters of the received bursts as they arrive. These parameters include detection of the presence of a burst (start time), frequency, initial phase, timing and amplitude. The term "Unique Word" (UW) refers to a known, pre-determined pattern (known a priori to the receiver) that is transmitted to allow the receiver to synchronize (perform estimation of the burst parameters). A conventional burst transmitted by transmitter 102 at a certain frequency, phase timing and amplitude, which is received by receiver 104 through communication channel 106 is discussed with the help of FIG. 2.
FIG. 2 illustrates a burst sequence for conventional communication system 100.
As illustrated in the figure, burst sequence 200 includes a frame 204, a frame 206 and a frame 208 sampled on an x-axis 202, which represents time in seconds.
Frame 204 includes a UW 210 and a payload 212. Frame 206 includes a UW 214 and a payload 216. Frame 208 includes a UW 218 and a payload 220. Unique word provides a mechanism for a receiver in a burst mode communication system to synchronize with each frame. Payload includes data and information desired by a transmitter in a burst mode communication system to be received and processed by the receiver.
In some systems, it is desirable for various reasons to have available not just a single known UW, but to use a set of UWs. The various UWs could be used to differentiate amongst various transmitters, or to convey other information about the transmission. A burst sequence including a set of UWs is discussed with the help of FIG. 3.
FIG. 3 illustrates a burst sequence with a set of UWs for conventional communication system 100.
As illustrated in the figure, a burst sequence 300 includes a frame 304, a frame 306, a frame 308, a frame 310, a frame 310 and a frame 314 sampled on an x-axis 302, which represents time in seconds. FIG. 3 further illustrates a correlator1 316, a correlator2 318, a correlator3 320 and a correlatorN 322.
Frame 304 includes a UW 324 and a payload 326. Frame 306 includes a UW 328 and a payload 330. Frame 308 includes a UW 332 and a payload 334. Frame 310 includes UW 328 and a payload 336. Frame 312 includes UW 324 and a payload 338. A plurality of additional number of UW/payload sets indicated by dots. Lastly, frame 314 includes a UW 340 and a payload 342.
As illustrated in FIG. 3, burst sequence 300 includes any one of the UWs from the set of UW 324, UW 328, UW 332 and UW 340. Each UW may be used to denote some information about the payload which follows. In one example, UW 324 denotes that FEC (Forward Error Correction) code rate for payload 326 is rate half, while UW 328 denotes that FEC code rate for payload 330 and payload 336 is rate two thirds.
Maximum likelihood detection of UWs in the presence of AWGN is done by correlation of the known transmitted signal with the noisy received signal. When a system uses a set of UWs, the receiver must correlate with all the members of the UW set. If N numbers of UWs are used, the receiver must perform N correlations.
In order to detect burst sequence 300 that includes a set of UWs, receiver 104 must have a separate correlator to detect each UW. As illustrated in FIG. 3, correlator1 316 is required for UW 324, correlator 318 is required for UW 328, correlator 320 is required for UW 332 and correlator 322 is required for UW 340. Correlators for the additional UW indicated as dots are not shown for purposes of brevity.
Each UW within a set of UWs in burst sequence 300 will contain different information. Receiver 104 must search for all the UWs at any given time without knowing which UW to expect. In order to perform maximum likelihood detection of UW 324, UW 328, UW 332, the other UW corresponding to the dots in the figure and UW 340 in the presence of AWGN, receiver 104 must perform N correlations. Each of the correlators can be computationally expensive. Hence, the complexity of this approach can become prohibitive.
What is needed is a system and method of constructing a set of UWs for efficient detection such that the correlations at the receiver can be simplified.

System and method for constructing unique word sets for efficient detection using orthogonal functions


Systems and methods are disclosed herein to provide improved I/O techniques. For example, in accordance with an embodiment of the present invention, an integrated circuit includes a driver that receives data signals and provides an output signal based on the data signals, with the driver having a plurality of transistors with a first set of the plurality of transistors adapted to provide a first logical value as the output signal and a second set of the plurality of transistors adapted to provide a second logical value as the output signal based on the data signals. A sequencing circuit provides the data signals to the driver such that the first set of the plurality of transistors is switched on before the second set of the plurality of transistors is switched off, and the second set of the plurality of transistors is switched on before the first set of the plurality of transistors is switched off.

Input/output (I/O) circuits are generally used for transferring data to and from an integrated circuit or other type of electronic device. I/O circuits (also referred to as input/output buffers, receiver/transmitter circuits, or receiver/driver circuits) are often designed to support one or more types of I/O interface standards (e.g., low voltage differential signaling (LVDS) or high-speed transceiver logic (HSTL)), which may include one or more signal level requirement types within an I/O interface standard (e.g., a specific type of LVDS). These I/O interface standards generally address chip-to-chip interfaces, board-to-board interfaces, and box-to-box interfaces for a wide range of existing and emerging applications, such as data packet processing, data bus bridges, and high-speed memory interfacing.
The I/O circuits typically are designed to support the desired I/O standard, while minimizing noise and other known performance degradations. As a specific example, an LVDS differential output driver may be used to transmit information from one integrated circuit to another. The LVDS differential output driver typically employs switches to direct current in one direction or another to a receiver to transmit the desired information. However, a drawback of a conventional LVDS differential output driver is that the switches may not operate in an identical fashion and may not open and close at precisely the desired time. Consequently, this may result in performance degradation and may also result in noise being introduced at the LVDS differential output driver's output. As a result, there is a need for improved I/O circuit techniques, such as switching techniques for LVDS differential output driver applications.

Switch sequencing circuit systems and methods


Described herein is a method for substantially nickel-free phosphating of a metallic surface, wherein a metallic surface, optionally after cleaning and/or activation, is first treated with an acidic aqueous phosphating composition that includes zinc ions, manganese ions, and phosphate ions, and is optionally rinsed and/or dried, and is thereafter treated with an aqueous after-rinse composition that includes at least one kind of metal ion selected from the group consisting of the ions of molybdenum, copper, silver, gold, palladium, tin, antimony, titanium, zirconium, and hafnium and/or at least one polymer selected from the group consisting of the polymer classes of the polyamines, polyethyleneamines, polyanilines, polyimines, polyethyleneimines, polythiophenes, and polypryroles and also mixtures and copolymers thereof, with both the phosphating composition and the after-rinse composition being substantially nickel-free.

The present invention relates to a method for substantially nickel-free phosphating of a metallic surface, to a corresponding phosphating composition, and also to a correspondingly phosphate-coated metallic surface.
Phosphate coatings on metallic surfaces are known from the prior art. Such coatings serve to prevent corrosion of the metallic surfaces and also, furthermore, as adhesion promoters for subsequent coating films.
Such phosphate coatings are employed in particular in the areas of the automobile industry and also of general industry.
The subsequent coating films, as well as powder coatings and wet paints, are, in particular, cathodically deposited electrocoat materials (CEC). Since the deposition of CEC requires a flow of current between metallic surface and treatment bath, it is important to set a defined electrical conductivity in the phosphate coating in order to ensure efficient and uniform deposition.
Phosphate coatings, therefore, are customarily applied using a nickel-containing phosphating solution. The nickel deposited in this process, elementally or as an alloy constituent, e.g., Zn/Ni, provides appropriate conductivity of the coating in the course of the subsequent electrocoating.
On account of their high toxicity and environmental harmfulness, however, nickel ions are no longer a desirable constituent of treatment solutions, and ought therefore as far as possible be avoided or at least reduced in terms of their amount.
The use of nickel-free or low-nickel phosphating solutions is indeed known in principle. It is limited, however, to particular substrates such as steel.
The stated nickel-free or low-nickel systems, moreover, may result in poor corrosion values and coating adhesion values under prevailing CEC deposition conditions, owing to a nonideal substrate surface.

This patent is subject to a terminal disclaimer.

Method for nickel-free phosphating metal surfaces


A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|xe2x89xa6|V1|xe2x89xa650xc3x97|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

1. Field of the Invention
This invention relates to a process of forming a silicon-based film (a film which comprises silicon), a silicon-based film, a semiconductor device having a semiconductor junction formed of a silicon-based film, and a system for forming a silicon-based film.
2. Related Background Art
High-frequency plasma CVD (chemical vapor deposition) enables large-area film formation and low-temperature film formation with ease and brings about an improvement in process throughput. Accordingly, this is one of means which are reliable for the mass production of silicon-based films.
As semiconductor devices having semiconductor junctions formed of silicon-based films, think about solar cells for example. Compared with the existing energy which utilizes fossil fuel, solar cells making use of silicon-based films have an advantage that the energy source is limitless and an advantage that their electricity generation process is clean.
However, in order to more advance the spread of solar cells, the unit price per electrical quantity (electric energy) of generated electricity must be more lowered. For this end, the rate of film formation in the high-frequency plasma CVD must be improved and also the photoelectric conversion efficiency must be enhanced. How a technique for achieving these be established is one of important technical subjects.
With regard to thin-film transistors used to, e.g., make liquid-crystal display devices drive with matrices, even when their gate width is made finer, the value of electric current that is necessary for circuit drive can sufficiently be ensured as long as a high mobility of carriers has been achieved, so that pixels can be arranged in fine pitches. Hence, devices can be made compact and feasible for highly minute display relatively with ease. Accordingly, it is sought to provide thin-film transistors having characteristics of higher mobility.
In photovoltaic devices having a p-i-n junction, where the i-type semiconductor layer that functions substantially as a light absorption layer is formed as an i-type semiconductor layer containing a crystal phase, there is an advantage that the phenomenon of photodeterioration due to the Staebler-Wronski effect, which comes into question in the case of amorphous components, can be kept from occurring. Hence, it is effective to form any i-type semiconductor layer as the i-type semiconductor layer containing a crystal phase. Also, thin-film transistors formed of the semiconductor layer containing a crystal phase have a mobility which is greater by two figures or more, than thin-film transistors formed of an amorphous-phase semiconductor layer, and hence are expected to be greatly improved in TFT (thin-film transistor) characteristics.
With the foregoing for a background, in recent years, studies are made in variety on techniques concerning how silicon-based films be deposited at a higher rate and techniques concerning the formation of silicon-based films containing a crystal phase.
A high-frequency plasma CVD improved in film formation rate is disclosed in Japanese Patent Publication No. 7-105354. More specifically, it discloses that, where the frequency of high-frequency power is represented by f (MHz) and the distance between a substrate and an electrode by d (cm), in the range where f is 25 to 150 MHz and taking note of the relationship between f and d, it is preferable to form films setting f/d within the range of 30 to 100 MHz and that a method is particularly preferred in which films are formed in the region where d is 1 to 3 cm or the region where pressure is 0.1 to 0.5 mbar.
With regard to processes of forming crystalline silicon-based films, Japanese Patent Application Laid-Open No. 11-330520 discloses that a silicon-based thin-film layer can be formed at a high rate when formed under conditions that silane-based gas and hydrogen gas are used, the internal pressure of a reaction chamber is set at 5 Torr or more and the substrate-electrode distance is 1 cm or less.
As a method of forming a high-quality deposited film, Japanese Patent Application Laid-Open No. 6-97078 also discloses a method in which a voltage making the substrate surface have negative potential is applied to the substrate-side electrode.
In processes for forming silicon-based films on substrates by plasma CVD, it has become known that the film formation rate can be made higher by making higher the high-frequency power to be supplied, making smaller the distance between the substrate and a high-frequency power feed section, and making higher the high-frequency power per plasma space.
However, an increase in the high-frequency power per plasma space results in an increase in electron density in the plasma and concurrently therewith an increase in ion density. Also, positive ions are accelerated by electrostatic attraction in the sheath region in a discharge space. Hence, ion bombardment may take place to strain atomic arrangement in the bulk or cause formation of voids in the film. Thus, making higher the high-frequency power per plasma space can be an inhibitory factor against the formation of high-quality silicon-based films.
In the method disclosed in Japanese Patent Application Laid-Open No. 6-97078, it is also considered difficult to keep the positive ions from ion bombardment, and also it is considered difficult to apply the method to a roll-to-roll method which is a method of forming large-are silicon-based films continuously.
An object of the present invention is to provide a silicon-based film formation process which can form a silicon-based film having less defect density and superior characteristics, at a lower cost and a higher film formation rate than any conventional processes.
Another object of the present invention is to provide a silicon-based film having less defect density.
Still another object of the present invention is to provide a semiconductor device having good electrical characteristics, also having superior adherence to any underlying layer, environmental resistance and so forth, and can enjoy a short tact time at the time of manufacture.
The silicon-based film formation process of the present invention is a process comprising feeding a source gas into a vacuum reactor, and applying a high-frequency power to a high-frequency power feed section installed in the vacuum reactor, to cause plasma to take place to form a silicon-based film by chemical vapor deposition on a substrate placed on an electrode provided at a position opposing the high-frequency power feed section and grounded electrically, and is characterized in that;
the film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential, the V1 satisfying the following expression:
|V2|xe2x89xa6|V1|xe2x89xa650xc3x97|V2|,
where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state.
The silicon-based film of the present invention is characterized by being formed by the above silicon-based film formation process.
The semiconductor device of the present invention is a semiconductor device having on a substrate a semiconductor junction formed of silicon-based films, and is characterized in that at least one silicon-based film in the semiconductor device is the above silicon-based film.
The silicon-based film formation system of the present invention comprises:
a vacuum reactor;
a gas feed pipe for feeding a source gas into the vacuum reactor;
a high-frequency power feed section installed in the vacuum reactor;
a high-frequency power source for applying a high-frequency power to the high-frequency power feed section;
an electrode provided at a position opposing the high-frequency power feed section; and
a direct-current power source for superposing a direct-current potential on the high-frequency power applied to the high-frequency power feed section; and
is characterized in that the electrode is electrically grounded, and the potential of the high-frequency power feed section is so set as to be a potential which is lower by V1 than the ground potential; the V1 satisfying the following expression:
|V2|xe2x89xa6|V1|xe2x89xa650xc3x97|V2|,
where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state.
The direct-current potential V1 may preferably be within the range of 2xc3x97|V2|xe2x89xa6|V1|xe2x89xa630xc3x97|V2|. In the high-frequency plasma CVD, the substrate may preferably be so set as to serve also as the electrode provided at a position opposing the high-frequency power feed section and grounded electrically. The high-frequency power may preferably have a frequency of from 20 MHz to 500 MHz. The high-frequency power may more preferably have a frequency of from 30 MHz to 150 MHz. The silicon-based film may preferably be a silicon-based film containing a crystal phase. The silicon-based film containing a crystal phase may preferably contain a region in which the diffraction intensity of the (220)-plane, measured by X-ray or electron-ray diffraction of the crystal phase, is in a proportion of 80% or more with respect to the total diffraction intensity.
The source gas may preferably contain at least one of silicon hydride and silicon fluoride, and hydrogen. The distance between the high-frequency power feed section and the substrate may preferably be from 3 mm to 30 mm. The silicon-based film may preferably be formed under a pressure of from 100 Pa (0.75 Torr) to 5,000 Pa (37.5 Torr). In forming the silicon-based film, the source gas may preferably be fed at a residence time of from 0.01 second to 10 seconds. In forming the silicon-based film, the source gas may more preferably be fed at a residence time of from 0.1 second to 3 seconds. In forming the silicon-based film, the high-frequency power may preferably be applied at a density of from 0.01 W/cm3 to 2 W/cm3. In forming the silicon-based film, the high-frequency power may more preferably be applied at a density of from 0.1 W/cm3 to 1 W/cm3.
The silicon-based film may preferably contain at least one of oxygen atoms, carbon atoms and nitrogen atoms, which may be in a total content of from 1.5xc3x971018 atoms/cm3 to 5.0xc3x971019 atoms/cm3. The silicon-based film may preferably contain fluorine atoms in a content of from 1.0xc3x971019 atoms/cm3 to 2.5xc3x971020 atoms/cm3.
The semiconductor device having a semiconductor junction may preferably be a photovoltaic device having at least one set of a p-i-n semiconductor junction in which a semiconductor layer showing a first conductivity type, an i-type semiconductor layer and a semiconductor layer showing a second conductivity type are superposed in order.

Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system


The present inventions are a method for production of hydrogen which decomposes water into hydrogen by oxidation of metals only when the metals are exposed to the water, while preventing oxidation of pure metal nanoparticles using block copolymers and, in addition, hydrogen produced by the method described above. The method of the present invention has advantages of improved convenience and simplicity, achieves a preferable approach for hydrogen storage because the metal nanoparticles enclosed by the block copolymer have the ease of delivery and reaction thereof. Additionally, the method of the present invention only using water and the metal is considered eco-friendly and useful in industrial energy applications.

Fossil fuels contribute at least 90% of the present energy demand. However, the fossil fuels are consumable materials which cannot be regenerated once used, are limited in quantity and extremely harmful to the environment due to pollution substances such as carbon dioxide gas generated during combustion, thus raising significant environmental problems.
Hydrogen energy is attracting increasing interest as a new and clean energy resource capable of replacing fossil fuels, in particular, hydrogen is a material greatly coming into the spotlight as an alternative energy source while fossil fuels are being rapidly exhausted. Hydrogen energy has various benefits such as high energy efficiency to mass, water generated as the only residue, etc., thus satisfying advantageous conditions for a future fuel.
However, for use of hydrogen, it is necessary to use a specific medium for safe storage and delivery of hydrogen. Although massive research and investigations have been conducted to solve this problem, there is still no proposal for an ideal solution satisfying requirements suggested by the US department of energy (DOE).
Additionally, a variety of studies for formation of metal nanoparticles have been conducted, including, for example, that using block copolymers resulting in formation of metal nanoparticles such as iron oxide (Fe3O4)(B. Y. Sohn et al., J. Ame. Chem. Soc. 125, 6368, 2003), gold (J. P. Spatz et al., Langmuir 16, 407, 2000), titanium oxide (X. Li, et al., Langmuir 21, 5212, 2005) and the like. However, there is still a need for the development of novel methods to apply the metal nanoparticles formed above in the production of hydrogen.

Method for producing hydrogen using block copolymer and oxidation reaction of metals

Korea Advanced Institute of Science and Technology


A computerized method of allowing insurance customers to purchase travel medical insurance or other foreign medical insurance, based on user age, sex, and various user designed risk scenarios, and receive information on the payout amounts that various insurance plans will deliver based upon these factors. In one embodiment, a method for allowing customers who are unfamiliar with the medical cost structure of a foreign country to be informed both as to the costs of medical treatment in that country, and the benefits that a variety of foreign coverage medical insurance plans will provide under these user risk scenarios. These plans may then be evaluated according to different user selected parameters. The method can be implemented using computerized servers and client devices communicating using standard internet protocols over the internet.

1. Field of the Invention
The invention is in the field of computerized networked insurance methods, with a specific emphasis on travel or foreign stay insurance, travel or foreign stay medical insurance and health insurance.
2. Description of the Related Art
Insurance policies usually provide various types of coverage benefits (e.g. hospitalization benefits, ambulance benefits, emergency care benefits). Although prior art computerized systems exist whereby a consumer (user) may use a web browser to access a server and purchase insurance, these prior art systems do not provide enough comparative information and ability to construct alternative scenarios to enable a consumer or user to make a fully informed purchasing decision.
Thus at present, a consumer might purchase an insurance policy with a low premium without clearly understanding the various types of coverage benefits provided by the insurance policy, and the costs the consumer might incur when it is time to file a claim.
As a result, the consumer might end up paying a higher cost at the time of filing a claim. Alternatively, the consumer may purchase more insurance than is likely to be needed under most realistic scenarios, and end up spending more as a result. Both outcomes are unsatisfactory.
These problems are particularly acute when the consumer wishes to purchase insurance, such as health insurance, in a country other than that of the consumer's country of origin (usually the country of the consumer's citizenship). This is because consumers accustomed to the price structures in their country of origin may be quite unfamiliar with the very differing price structures in other countries, and thus may either under purchase insurance (e.g. not purchase sufficient medical insurance) or alternatively waste money by purchasing much more coverage than is actually needed.
Previous work in the insurance industry, here using medical/health insurance as a particular example, tended to ignore the problems resulting from purchasing medical insurance while traveling between or residing in foreign countries. This prior art, which was generally entirely one country based, includes Howell, US patent publication 2009/0276247 entitled "Systems and methods for web-based group insurance/benefits procurement and/or administration". Other prior art with this type of single country focus includes Jinks, US patent publication 2002/0055862, entitled "Systems and methods for interactively evaluating a commercial insurance risk"; and Lind, US patent publication 2006/0248008, entitled "Method of evaluating a benefit plan".

Method of estimating and obtaining international health and temporary medical insurance


An electronic device includes a conductor plate, a circuit board placed with a distance to a surface of the conductor plate, a connector provided on the circuit board, a flexible cable having one end connected to the connector and laid down along the surface of the conductor plate, and a cable holding member which includes a sloped holding surface for holding at least part of a portion of the flexible cable ranging from the connector to the surface of the conductor plate and which is electrically connected to the conductor plate.

1. Technical Field
The present disclosure relates to an electronic device having a flexible cable and contrived so that electromagnetic noise derived from the flexible cables is reduced.
2. Description of Related Art
In recent years, digital interfaces serving for interconnecting one electronic device to another, or provided within electronic devices have been advanced toward increasingly higher speeds. For example, high-speed serial interfaces using differential signals, such as LVDS (Low Voltage Differential Signaling), HDMI (High-Definition Multimedia Interface) and USB (Universal Serial Bus), are used in AV (Audio-Video) or other electronic devices. As digital signals transmitted in digital interfaces (communication cables) become higher and higher in speed, electromagnetic noise radiated from the communication cables increases more and more. Therefore, in view of suppression of the electromagnetic noise from electronic devices, it is quite important to suppress radiation of electromagnetic noise from communication cables serving for interconnecting one electronic device to another, or from communication cables provided within electronic devices.
In many electronic devices, flexible cables such as flexible flat cables are used as communication cables for interconnecting one component to another, e.g. one circuit board to another, within electronic devices. A flexible flat cable as an example has a structure that a plurality of signal lines formed of plate-like conductors placed in parallel with a specified distance therebetween are sandwiched by two resin films.
In order to suppress radiation of electromagnetic noise from communication cables in high-speed digital interfaces, there is a need for satisfying matchings between respective characteristic impedances of on-circuit-board lines, connectors, communication cables or other transmission path elements and element-to-element characteristic impedances among the transmission path elements. For example, it is important to satisfy a matching between characteristic impedances of flexible flat cables used as communication cables.
The characteristic impedance of a flexible flat cable depends on thickness and width of a conductor constituting signal lines, distances between the signal lines, e.g. chassis or other conductors located in vicinities of the cable. Therefore, in a case where, for example, a flexible flat cable is partly floated in the air while its rest is fixed to the chassis, the characteristic impedance of the flexible flat cable breaks down, and it becomes hard to take a matching with a characteristic impedance of a connection-destined transmission path element.
As a method for suppressing noise radiation from a flexible flat cable, a method of providing a metal shield layer on both surfaces of the flexible flat cable over its entire length is disclosed in Japanese Patent Application No. 2009-181792 A. Providing the metal shield layer makes it possible to obtain a stabilization of the characteristic impedance and a shielding effect for electromagnetic noise.
Japanese Patent Application No. 2010-122550 A discloses a structure that a flexible flat cable connected to a circuit board and extending between a chassis and another circuit board is fixed to the chassis via a bonding member of a specified thickness. Keeping distances from the chassis and the another circuit board at specified values reduces effects of electromagnetic noise from the chassis and the another circuit board to the flexible flat cable.

Panasonic Intellectual Property Management Co., Ltd.


A system and method for improved evaluation of semiconductor hardware is provided. The system comprises a firmware repository server, which firmware repository server comprises a plurality of firmware packages for the one or more evaluation hardware boards. The firmware repository server is further configured to: receive a firmware request for a user evaluation hardware board from a first of the client devices, search the plurality of firmware packages for compatible firmware packages for the user evaluation hardware board, generate a catalog of the compatible firmware packages for the user evaluation hardware board, transmit the catalog to the first client device, receive a request for a user selected firmware package from the catalog of compatible firmware packages, and to transmit firmware of the user selected firmware package to the client device for installation on the user evaluation hardware board.

Users evaluating new semiconductor hardware products, such as microcontrollers, wireless chips, e.g., for Bluetooth or Zigbee, typically purchase evaluation hardware boards/evaluation boards from the respective manufacturer. When using such hardware, the user is presented with a variety of methods to download example applications onto the hardware that enables evaluation of the functionalities of the new product, i.e., the so-called "silicon capabilities". Generally, the methods used require the user to follow lengthy instructions, download software of significant image size to another computer, and potentially use provided software tools to compile the example application before downloading it onto the evaluation hardware board.
Known approaches typically require the download and installation of a Software Development Kit (SDK) onto a user computer, usually a file of 1 gigabyte or more. The time and bandwidth necessary is considerable. The user may also have to install software tools for compiling the source code of the example functionality into binary images if pre-compiled examples are not provided in the SDK. This is potentially a lengthy and error prone process for inexperienced users. After binary images for the example are created from the SDK and compiled, these need to be transferred to the evaluation hardware board typically via USB connections. This process must be repeated for each evaluation board and each example application the user desires to evaluate.

System for improved evaluation of semiconductor hardware and corresponding method


A process for making a garment that can include an absorbent assembly is disclosed. The process includes transporting a garment shell web in a machine direction. Portions of the web may be removed to provide an opening, and an absorbent assembly may be disposed on the garment shell web proximate the opening while the garment shell web is in an open configuration. A portion of the garment shell web may be directed in the cross machine direction to define a folded portion, and a portion of the absorbent assembly may be attached to the folded portion.

Garments intended to be worn about the lower torso, such as boxer shorts or other pant-like garments, have a variety of uses including semi-durable garments, disposable garments, and swimwear. Often it may be advantageous for these garments to include an absorbent body; in such configurations, the garments may have applications as training pants, incontinence products, feminine care products, and the like.
Processes for making garments intended to be worn about the lower torso are known in the art. Nonetheless, the processes that are presently available may often result in garments that are not aesthetically pleasing and that do not provide a comfortable fit. In addition, such processes often do not lend themselves to including an absorbent in the garment. Further, such processes often do not produce garments having a traditional crotch (i.e. a front to back crotch with significant crotch depth), or with hanging legs. Still further, such processes can often be complex, or may not be suitable for continuous high-speed converting.
Accordingly, there remains a need for a process that provides garments having traditional garment styling and shape and that include an absorbent. Further, there is a need for a process that provides such garments with a front to back crotch seam that provides suitable crotch depth. Still further, there is a need for a process for making such garments that is capable of being used in connection with an automated high-speed converting system.

Process for making a garment including an absorbent assembly


A method of manufacture and an integrated functional multilayer structure, includes a substrate film formed or formable so as to exhibit a selected shape; and a number of functional, preferably including optical, mechanical, optoelectrical, electrical and/or specifically, electronic, elements, such as conductors, insulators, components and/or integrated circuits, provided upon the substrate film in the proximity of the shape; wherein the substrate film has further been provided with a structural tuning element, optionally including an elongated, circumferential or other selected shape, said structural tuning element being configured to locally control induced deformation, optionally including stretching, bending, compression and/or shearing, of the substrate film within said proximity of the shape.

There exists a variety of different stacked assemblies and multilayer structures in the context of different functional ensembles e.g. in the field of electronics and electronic products. The motivation behind the integration of functionalities involving e.g. electronics, mechanical or optical features may be as diverse as the related use contexts. Relatively often size savings, weight savings, cost savings, or just efficient integration of components is sought for when the resulting solution ultimately exhibits a multilayer nature. In turn, the associated use scenarios may relate to product packages or casings, visual design of device housings, wearable electronics, personal electronic devices, displays, detectors or sensors, vehicle interiors, antennae, labels, vehicle electronics, etc.
Electronics such as electronic components, ICs (integrated circuit), and conductors, may be generally provided onto a substrate element by a plurality of different techniques. For example, ready-made electronics such as various surface mount devices (SMD) may be mounted on a substrate surface that ultimately forms an inner or outer interface layer of a multilayer structure. Additionally, technologies falling under the term "printed electronics" may be applied to actually produce electronics directly and additively to the associated substrate. The term "printed" refers in this context to various printing techniques capable of producing electronics/electrical elements from the printed matter, including but not limited to screen printing, flexography, and inkjet printing, through a substantially additive printing process. The used substrates may be flexible and printed materials organic, which is however, not always the case.
Furthermore, the concept of injection molded structural electronics (IMSE) involves building functional devices and parts therefor in the form of a multilayer structure, which encapsulates electronic functionality as seamlessly as possible. Characteristic to IMSE is also that the electronics is commonly manufactured into a true three-dimensional (3D) (non-planar) form in accordance with the 3D models of the overall target product, part or generally design. To achieve desired 3D layout of electronics on a 3D substrate and in the associated end product, the electronics may be still provided on an initially planar substrate, such as a film, using two dimensional (2D) methods of electronics assembly, whereupon the substrate, already accommodating the electronics, may be formed into a desired three-dimensional, i.e. 3D, shape and subjected to overmolding, for example, by suitable plastic material that covers and embeds the underlying elements such as electronics, thus protecting and potentially hiding the elements from the environment. Further layers and elements may be naturally added to the construction.
When producing or mounting elements such as mechanical, optical or electrical—if not specifically electronic—components onto e.g. a film-type substrate, such as a thermoplastic film, a piece of fabric or a leather sheet, the substrate or surrounding other layers at least indirectly connected to the elements may be later subjected to forces involving e.g. twisting, stretching, compression or bending, which may cause the elements—if not the substrate itself—to break or detach from the attached elements.
In connection with elements such as electronics packages (e.g. thin quad flat package (TQFP)) or other components, which arguably have many preferred properties such as a rather manageable contact density from the standpoint of e.g. IMSE technology, it has been further found that such elements easily trap air underneath them during various processing stages such as overmolding, which may in turn reduce the factual size of associated contact areas.
Yet, directly embedding e.g. TQFP and other packages, or generally elements, as is in hard resins has not been found fully applicable approach especially in scenarios involving wide temperature ranges due to a large coefficient of thermal expansion (CTE) mismatch between the concerned features, which may eventually cause the structure to tear apart and fail. Larger packages or elements can also be challenging in certain processing stages such as forming (e.g. thermoforming) of a hosting substrate film as the related contacts may be torn and lost.
When there is a drastic change in a structure's rigidity, considering e.g. locations on the substrate film at the edge of a potentially underfilled element such as a component or module, large transients of film deformation, caused by e.g. stretch during thermoforming, may emerge, which in turn causes excessive stress to neighboring potentially more fragile materials such as layers of insulating, conductive and/or colored ink.
Generally, when elements such as conductor traces or related crossover structures are positioned near drastic-type radius in terms of a surface contour of a hosting substrate film, the elements may tear and fail. For example, conductive ink used in crossovers may be more brittle than standard conductive ink, which increases the risk of failure in the vicinity of e.g. insulator boundary and considerable curvature of the substrate. Insulator print is often more resistant to stretching, thus causing a transient in deformation at its edges, most importantly in places where insulator ends and the overlying crossover conductive ink is connected to more standard conductive ink.
Still further, in scenarios wherein large features such as shielding hatches or antennae are to be established on 3D (substrate) surfaces from a stiffer material such as conductive ink (in contrast to substrate such as a plastic film itself), the stiffer material may cause undesired effects such as deformation, folding or even tear in the surrounding features on the film and in the film itself, thus potentially ruining the workpiece.

Integrated functional multilayer structure and method of manufacture therefor


A thermoelectrically cooled integrated circuit package is provided which includes a thermally conductive dielectric substrate, an input connecting portion and an output connecting portion supported by the dielectric substrate, and an integrated circuit chip including an input terminal and output terminal. The input terminal is electrically connected to the input connecting portion via a first conductive material, and the output terminal is electrically connected to the output connecting portion via a second conductive material. The first conductive material and the second conductive material thermoelectrically cool the integrated circuit chip when a signal passes through the first conductive material and the second conductive material.

The present invention relates to thermoelectric coolers (TEC's).
It is known to use a thermoelectric cooler to lower the operating temperature of a semiconductor device such as a laser. A thermoelectric cooler includes a plurality of thermoelectric cooling elements, which are constructed of materials with dissimilar characteristics. The elements are connected electrically in series and thermally in parallel to provide a plurality of thermoelectric couples. Each thermoelectric couple includes one element having a first characteristic and another element having a second characteristic. The thermoelectric couples are connected between two plates which function as a hot side and a cold side of a thermoelectric cooler. The hot side is thermally connected to a heat sink and the cold side is thermally connected to the semiconductor device.
Thermoelectric cooling is achieved by passing a DC electric current through the thermoelectric cooler. Thermal energy is drawn from the cold side to the hot side at a rate which is proportional to current passing through the circuit and the number of couples. At the hot side, the thermal energy is dissipated by the heat sink. The thermoelectric cooling effect is greatly increased when the dissimilar conducting materials used are semiconducting materials.
The dissimilar semiconducting materials generally used for thermoelectric cooling are N-type material (more electrons than necessary to complete a perfect molecular lattice structure) and P-type material (fewer electrons than necessary to complete a perfect molecular lattice structure, thus providing holes). The extra electrons in the N-type material and the holes in the P-type material are called "carriers" which function to move the thermal energy from the cold side to the hot side.

Thermoelectric cooling via electrical connections


Disclosed herein are a method and apparatus for providing a toolbar service. The method for providing a toolbar service in a system connected to a user client via a network includes generating a file which can be edited by a user and includes at least one item information for defining an attribute of an interface displayed in a toolbar; receiving a request for download of a toolbar application from the user client; and transmitting the toolbar application including the file to the user client. The toolbar application installed in the user client updates the file according to a user's request for editing an item, parses the updated file to dynamically generate the interface of the toolbar. It is possible to provide a variety of interfaces according to a theme.

With the development of the Internet, users can access necessary information at anywhere and anytime.
Conventionally, access to information via the Internet was mainly realized by a web browser. The web browser is a software for displaying a variety of information retrieved from a web server when a user's computer is connected to the Internet. Currently, the web browser is developed so as to be easily used by only clicking a mouse several times in combination with a variety of Internet functions such as file transfer protocol (FTP), Telnet, News or Gopher as well as the World-Wide Web (WWW).
There are various types of web browsers. Among them, Internet Explorer of Microsoft Corporation and Communicator of Netscape Corporation are being most widely used.
The web browser includes an address bar for inputting the address of information to be accessed. A user can confirm necessary information by inputting a uniform resource locator (URL), such as a domain name or an IP address, in the address bar.
Recently, many users use a searching service and want to easily access a site which is frequently used. However, if only the web browser is used, it is inconvenient to access information.
For example, when a user wants to search for a specific keyword, the user inputs the address of a site for providing a searching service in the address bar of the web browser, confirms a main web page of the site, and inputs a desired keyword in a searching bar included in the main web page. That is, it is inconvenient that many processes have to be performed to conduct the keyword search.
In order to remove such inconvenience, a content provider provides a toolbar service for facilitating access to information by a user.
A toolbar is activated in a predetermined region at the time of executing the web browser and includes a keyword inputting bar and a variety of additional function buttons. When the user inputs a keyword in the inputting bar of the toolbar, a site for providing the toolbar directly provides the searched result to the user.
The toolbar performs additional functions such as desktop searching and popup blocking in addition to a web searching function and performs a function for generating interfaces related to these functions in a toolbar region.
Due to the convenience of the toolbar and the variety of additional functions, the use of the toolbar has been increased. However, a conventional toolbar cannot provide a customized service to the user.
In addition, in spite of that the type (for example, Naver, Hangame, Nexon or the like) of a site, which is frequently used, varies according to the user and the type of a low-level service used in the site varies according to the site, the conventional toolbar service provides a uniform menu for a searching service. Accordingly, it is difficult to satisfy a variety of desires of users.

Method and apparatus for providing toolbar service


A method of operating a semiconductor memory device is provided. In a method of operating a semiconductor memory device including a memory cell array which includes a plurality of bank arrays, memory cells in a first region of the memory cell array are tested to detect one or more failed cells in the first region, a fail address corresponding to the detected one or more failed cells is determined and the determined fail address is stored in a second region different from the first region, in the memory cell array.

1. Technical Field
Exemplary embodiments relates to memory devices, and more particularly, to semiconductor memory devices and methods of operating the same.
2. Discussion of the Related Art
A semiconductor memory device is a memory device that is embodied in a structure that uses a semiconductor for data and information storage. Examples of such semiconductors include silicon Si, germanium Ge, gallium arsenide GaAs, indium phosphide InP, etc. Semiconductor memory devices are classified into volatile memory devices and nonvolatile memory devices.
A volatile memory device loses its stored data when its power supply is interrupted. Examples of the volatile memory device include a static RAM (SRAM), a dynamic RAM (DRAM), a synchronous DRAM (SDRAM), etc.
A DRAM includes a plurality of memory cells being arranged in a matrix form. As the integration and the speed of semiconductor memory devices increases, a ratio of cells of the semiconductor memory devices which are failed cells that do not operate correctly is increasing. To improve yield of a semiconductor memory device, a method of efficiently repairing a failed cell may be desirable.

Semiconductor memory devices and methods of operating the same


Chewing gum formulations including sodium pyrophosphate and encapsulated aspartame are disclosed. Methods of manufacturing chewing gum are also disclosed.

The present invention generally relates to chewing gum. More specifically, the present invention relates to chewing gums including aspartame.
It is of course known to prepare chewing gum including a variety of different ingredients. Some of these ingredients are used to add a flavor or sweetness to the chewing gum. One of the difficulties encountered in adding certain ingredients to chewing gum is that they are vulnerable to degradation.
One of the ingredients that has been recently added to chewing gum formulations are high intensity sweeteners. One such high intensity sweetener is aspartame. Aspartame is a sweetener that has been approved for use in food products including chewing gum in the United States and many different countries. One of the difficulties in using aspartame in chewing gum is that it is vulnerable to degradation; upon exposure to moisture, aspartame will degrade.
Another ingredient that may be used in chewing gum products is sodium pyrophosphate. Sodium pyrophosphate provides chewing gum with dental health benefits such as the prevention of soft calculus deposit build-upon on teeth and tooth whitening.
Generally, sodium pyrophosphate containing chewing gums are sugarless. Thus, these gums may desirably include aspartame. However, when chewing gum includes sodium pyrophosphate, the chewing gum has a higher pH causing the aspartame within the gum product to become less stable in the product. Indeed, the greater amount of sodium pyrophosphate used in the formula, the lower the stability of the aspartame in the formula. This results in a chewing gum product wherein the aspartame degrades. Thus, although desirable, such chewing gum products including sodium pyrophosphate and aspartame are very problematic.
The present invention provides improved chewing gums including aspartame and methods of manufacturing same. Pursuant to the present invention, chewing gum compositions including sodium pyrophosphate, are provided that also include encapsulated aspartame. It has been found that by using encapsulated aspartame in gum formulas that contain sodium pyrophosphate, the loss of aspartame during the shelf life of the chewing gum product is virtually eliminated.
To this end, the present invention provides a chewing gum comprising a water insoluble gum base portion and a water soluble portion including sodium pyrophosphate and encapsulated aspartame.
In an embodiment, sodium pyrophosphate comprises approximately 0.1% to about 10% by weight of the chewing gum. In an embodiment, aspartame comprises approximately 0.01% to about 1% by weight of the chewing gum.
In an embodiment, the aspartame is coated with at least one food grade material selected from the group consisting of shellac, Zein, agar, alginate, cellulose derivatives, dextrin, gelatin, modified starch, acacia and maltodextrin.
In an embodiment, the encapsulated aspartame comprises at least 20% coating.
In an embodiment, the moisture level of the chewing gum is not greater than 2%.
In an embodiment, the aspartame is encapsulated by agglomeration.
In an embodiment, the aspartame is encapsulated by coating a food grade material onto the aspartame.
In a further embodiment, a chewing gum is provided that comprises a water insoluble gum base portion and a water soluble portion including at least 0.1% by weight sodium pyrophosphate and at least 0.01% by weight encapsulated aspartame.
In another embodiment of the present invention, a method for producing chewing gum including aspartame and sodium pyrophosphate is provided comprising the steps of encapsulating aspartame and adding to a water insoluble gum base portion, the encapsulated aspartame and sodium pyrophosphate.
In an embodiment, the encapsulated aspartame and sodium pyrophosphate is added to the water insoluble gum base portion with a flavor.
In an embodiment, the step of encapsulating the aspartame is done by coating a food grade material onto the aspartame.
In an embodiment, the step of encapsulating the aspartame is done by agglomerating an agent onto the aspartame.
In an embodiment, the step of encapsulating the aspartame is done by using a two-step process.
In an embodiment, the step of encapsulating the aspartame is done by using a process wherein aspartame is absorbed onto another component.
It is an advantage of the present invention to provide an improved chewing gum formulation.
Another advantage of the present invention is to provide an improved chewing gum formulation including sodium pyrophosphate.
Still further, an advantage to the present invention is to provide an improved chewing gum formulation that is sugarless, and includes sodium pyrophosphate as well as aspartame.
Furthermore, an advantage of the present invention is that it provides improved methods for preparing chewing gum formulations including aspartame.
Moreover, an advantage to the present invention is that it provides chewing gum formulations including aspartame as well as sodium pyrophosphate, wherein the loss of aspartame during the shelf life of the chewing gum product is profoundly decreased.
Additional features and advantages of the present invention are described in, and will be apparent from, the Detailed Description of the Presently Preferred Embodiments and from the FIGUREs.

Chewing gum formulations including encapsulated aspartame and sodium pyrophosphate


Circuits in a processor may provide an indication that power supplies are ready when waking from a reduced power state. The processor may include timers to measure a period of time, and may utilize voltage detectors to detect the voltages on the power supplies. A control register in the processor may influence the operation.

Processors typically receive power to operate when included in a system. The power may be received directly from one or more batteries, or from a power management integrated circuit or system, or the like. When waking from a reduced power mode, it may take time for power supply voltages to stabilize, or to "ramp up." For example, a processor may be in a sleep mode in which one or more power supply voltages may not be provided to the processor. When exiting the sleep mode, it may take time for the power supply voltages to reach a sufficient value for the processor to operate correctly.

Power supply detection method, apparatus, and system


A polystyrene foam sheet comprising a polystyrene resin which contains 1 to 15 wt. % of a rubber component having a majority of particle sizes less than about 0.45 microns has been found to be superior for forming deep drawn articles. Optionally one or two films may be extrusion coated or laminated to the foam sheet prior to thermoforming. Also disclosed is a method for thermoforming the foam sheet. Preheat the sheet, clamp the sheet between the matched male and female mold members, move the members into final position while applying a vacuum through both members to both sides of the foamed sheet and then chill formed foam to set a final shape.

Packaging is a major area for use and consumption of foamed polystyrene resins. This packaging is often fabricated from foamed polystyrene sheet into deep drawn cups, tubs, bowls, trays and similar articles by thermoforming the foamed sheet. It is desirable to have a foam sheet suitable for thermoforming cups and other deeply drawn articles in a single thermoforming operation.
Accordingly, it is an object of this invention to provide a polystyrene foamed sheet which can be formed efficiently into deeply drawn articles in addition to providing the thermoformed deeply drawn articles made from the polystyrene foamed sheet and optionally at least one integral, high-density skin.
This invention also provides as an object a method of producing three-dimensionally thermoformed deep drawn articles of a low-density polystyrene foam core and optionally at least one integral, high-density skin.

Polystyrene foam sheet useful for forming deep drawn articles, a process to produce those articles, and the deep drawn articles


The present disclosure provides a chip package structure having a heat sink and a method making the same. The method includes: bonding a chip to a top surface of a package substrate and forming a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, a first end of the heat-conducting lead is connected with a surface of the chip, and a second end is connected with a solder ball; forming a plastic package material layer that protects the chip and the heat-conducting lead; forming a heat-conducting adhesive layer on the surface of the plastic package material layer, where the heat-conducting adhesive layer is connected with the solder ball on the second end of the heat-conducting lead; and forming a heat dissipation layer on a surface of the heat-conducting adhesive layer. With the present disclosure, the heat dissipation efficiency of the chip is effectively improved.

At the present time, rapid development of electronic information technology and the continuous improvement of users' expectation, the functions of a single electronic device have become increasingly diversified, at the same time a single electronic device's size has been continuously shringking. Therefore, in the internal structure of an electronic equipment, densities of integrated circuit (IC) chips and functional components continue to increase and the critical dimensions (line/space widths, hole sizes, etc.) of these components continue to decrease, which have brought great challenges to the IC packaging industry.
Ball Grid Array (BGA) as a semiconductor IC packaging technology is widely used in the packaging market for shrinking ICs and has high density and multiple pins, has struggled to meet requirements for lighter, thinner, shorter, and smaller electronic products. However, since this chip packaging technique provides high-density electronic circuits and electronic components, the heat generated during operation is also high. Moreover, in BGA type of chip packaging, the semiconductor IC chip is packaged with a layer of encapsulant, referred to as Plastic Ball Grid Array (PBGA) package which has poor thermal conductivity. Therefore, the performance of the semiconductor chip is often affected by poor heat dissipation efficiency. To improve the heat dissipation efficiency of the chip package, a heat sink (or heat slug, heat block) may be added to the PBGA package structure.
FIG. 1 shows a commonly used PBGA package structure with a heat sink. This package structure takes into account the heat dissipation problem and adds the heat sink to the package structure, a heat sink 14 extends from a packaging substrate 11 to above a chip 12 through the support connection of several brackets. However, the problem with this structure is that the heat generated by the chip 12 needs to be conducted through a plastic packaging material layer 13 to reach the heat sink 14. The plastic packaging material layer 13 is usually made of resin and has poor thermal conductivity, resulting in a poor heat dissipation effect of the package structure. At the same time, this kind of package structure usually requires the mounting of the heat sink 14 after the chip 12 is bonded to the packaging substrate 11, and then the plastic packaging of the plastic material layer 13, which is usually cured by liquid plastic material. Therefore, the plastic packaging material is likely to overflow on the surface of the heat sink 14 during the plastic packaging process, resulting in a decrease in the heat dissipation effect of the heat sink 14, and ultimately resulting in poor heat dissipation of the packaged device and decreased electrical performance caused by poor heat dissipation.

Semiconductor package structure with heat sink and method preparing the same


Methods and compositions are provided for delivery of a polynucleotide encoding a gene of interest, typically an antigen, to a dendritic cell (DC). The virus envelope comprises a DC-SIGN specific targeting molecule. The methods and related compositions can be used to treat patients suffering from a wide range of conditions, including infection, such as HIV/AIDS, and various types of cancers.

The invention relates generally to targeted gene delivery, and more particularly to the use of a recombinant virus comprising a targeting molecule that targets and binds dendritic cells and can thus be used for dendritic cell vaccination.
Immunization is one of the most productive tools in modern medical practice but remains burdened by limitations. Certain infectious diseases such as HIV/AIDS, malaria, and tuberculosis are not currently controlled at all by immunization, while other infectious diseases are controlled by complex immunization regimens. Cancer is a promising target for immunotherapeutic treatments, but clinical outcomes in experimental trials have been disappointing (Rosenberg, S. A. et al. 2004. Nat. Med. 10:909-915, which is incorporated herein by reference in its entirety). Novel methods of immunization are needed, for example, to reliably induce anti-tumor immunity.
Dendritic cells (DCs) play critical roles in both innate and adaptive immunity. DCs are specialized antigen-presenting cells with the unique capability to capture and process antigens, migrate from the periphery to a lymphoid organ, and present the antigens to resting T cells in a major histocompatibility complex (MHC)-restricted fashion (Banchereau, J. & Steinman, R. M. 1998. Nature 392:245-252; Steinman, R. M., et al. 2003. Ann Rev Immunol 21: 685-711, each of which is incorporated herein by reference in its entirety). These cells are derived from bone marrow (BM) and are characterized by dendritic morphology and high mobility. Immature DCs are adept at antigen ingestion and are distributed as sentinels in peripheral tissue throughout the body. However, maturation of DCs is required in order to mount an efficient immune response (Steinman, R. M., et al. 2003. supra). The matured DCs express high levels of MHC-antigen complex and other costimulatory molecules (such as CD40, B7-1, B7-2 and CD1a) (Steinman, R. M. 1991. Ann Rev Immunol 9: 271-296, which is incorporated herein by reference in its entirety; Banchereau, J. and R. M. Steinman. 1998. supra). These molecules play key roles in stimulating T cells.
The discovery of the role of DCs as specialized antigen-presenting cells (APCs) has fueled attempts at DC-based immunization/vaccination that involve loading DCs with specific antigens (Banchereau, J. & Palucka, A. K. 2005. Nat. Rev. Immunol. 5:296-306; Figdor, C. G. et al. 2004. Nat. Med. 10:475-480, each of which is incorporated herein by reference in its entirety). However, all of these attempts involve ex vivo loading of DCs with specific antigens. Ex vivo generated DCs are then administered to the patient. Ex vivo generation of DCs for each patient is extremely labor intensive process.
By contrast, the present invention is directed inter alia to targeting, antigen loading and activation of DCs in vivo, which results in vivo treatment of diseases by generating a beneficial immune response in the patient. The invention thus fulfills a longstanding need for effective and efficient regimes for immunization/vaccination.

Recombinant retrovirus pseudotyped with a E2 alphavirus glycoprotein


A device includes a memory that stores a User Equipment Route Selection Policy (URSP) that includes a rule. The rule includes enhanced route selection descriptors (RSDs). Each of the enhanced RSDs may include special RSD parameter, such as a Technology selector. The device is configured to receive a request from a component, in the device, to establish a session with a network. The request includes request parameters. The devices processes each of the RSDs.

Advanced wireless networks incorporate many innovative technical features that may not be present in older networks. For example, a Fifth Generation (5G) network may incorporate network slicing technology to increase network efficiency and performance. In contrast, a Long-Term Evolution (LTE) network does not provide native support for network slicing. As another example, a 5G network may provide a mobile device with a User Equipment (UE) Route Selection Policy, to enable the mobile device to access particular services. In contrast, an LTE network provides a mobile device that it serves with Access Point Names (APNs).

System and method for processing enhanced route selection descriptors


The present invention provides an apparatus for forming concrete structures, such as railroad crossing signal foundations. The apparatus includes a generally hollow form, which is made from a strong and durable material, such as metal (e.g., steel) or composite material. The form is tapered and includes two halves that are selectively attached together for easy removal from a completed foundation. The form further includes several cantilever bolt holders that extend over the form and include holes that receive cantilever bolts that are incorporated into the foundation. One or more vibrating elements may be removably attached to the tops of the cantilever bolts and/or to the sides of the form. The air vibrators may be selectively activated during the cement pouring process to vibrate the concrete and substantially reduce or eliminate air bubbles and defects within the foundation. A pair of adjustable legs is attached to the form and allows the form to be positioned and supported over a foundation hole. Screw jacks are located at the ends of each leg, thereby allowing the form to be easily leveled relative to a ground surface.

Fixtures are generally used in the formation of concrete structures, such as foundations, in order to cause the structure to assume and maintain a desired shape and form. For example, when forming a railroad crossing signal foundation, workmen typically construct a fixture having a predetermined shape and size in order to ensure that the foundation conforms to federal guidelines and regulations. This type of fixture is usually constructed by nailing together several pieces of wood in a generally rectangular or square shape. One or more wooden planks (e.g., two-by-fours) are nailed to the top of the fixture in order to hold cantilever bolts that are integrated into the foundation and used to attach the railroad crossing signal to the foundation. The fixture is placed over a hole that is dug into the ground, and the concrete is poured into the hole through the fixture. As concrete fills the fixture, the sides of the fixture are usually hit repeatedly with a hammer or other device in order to vibrate the concrete and remove air bubbles and other potential defects from the foundation. After the concrete solidifies, the fixture is pulled apart and separated. Each time the fixture has to be used, the pieces of wood must be nailed together again. As a result of this process, a typical wooden fixture receives a great deal of wear and tear, and will only provide a few uses before it must be replaced. Furthermore, the process of reconstructing the fixture after each use is undesirably time consuming. Moreover, the concrete vibrating methods used with this type of fixture (e.g., pounding the fixture with a hammer) are often ineffective and leave air bubbles and defects within the foundation.
It is therefore desirable to provide a new and improved fixture for forming railroad crossing signal foundations, which is easy to use, remove from a foundation, and reuse, and which forms an improved railroad crossing signal foundation with substantially fewer air bubbles and defects.

Apparatus for forming concrete foundations


The present invention is related to compositions of modafinil, including compositions of modafinil and one or more diluents, disintegrants, binders and lubricants, and the processes for their preparation thereof.

Modafinil, C15H15NO2S, also known as 2-(benzhydrylsulfinyl) acetamide, or 2-[(diphenylmethyl) sulfinyl] acetamide, is a synthetic acetamide derivative with wake-promoting activity, the structure of which has been described in French Patent No. 78 05 510 and in U.S. Pat. No. 4,177,290 ('290), and which has been approved by the United States Food and Drug Administration for use in the treatment of excessive daytime sleepiness associated with narcolepsy. Modafinil has been tested for treatment of several behavioral conditions in combination with various agents including apomorphine, amphetamine, reserpine, oxotremorine, hypnotics, yohimbine, 5-hydroxytryptophan, and monoamine oxidase inhibitors, as described in the cited patents. A method of preparation of a racemic mixture is described in the '290 patent and a method of preparation of a levorotatory isomer is described in U.S. Pat. No. 4,927,855 (both incorporated herein by reference). The levorotatory isomer is reported to be useful for treatment of hypersomnia, depression, Alzheimer's disease and to have activity towards the symptoms of dementia and loss of memory, especially in the elderly.
The primary pharmacological activity of modafinil is to promote wakefulness. Modafinil promotes wakefulness in rats (Touret et al., 1995; Edgar and Seidel, 1997), cats (Lin et al., 1992), canines (Shelton et al., 1995) and non-human primates (Hemant et al, 1991) as well as in models mimicking clinical situations, such as sleep apnea (English bulldog sleep disordered breathing model) (Panckeri et al, 1996) and narcolepsy (narcoleptic canine) (Shelton et al, 1995).
Modafinil has also been described as an agent with activity in the central nervous system, and as a useful agent in the treatment of Parkinson's disease (U.S. Pat. No. 5,180,745); in the protection of cerebral tissue from ischemia (U.S. Pat. No. 5,391,576); in the treatment of urinary and fecal incontinence (U.S. Pat. No. 5,401,776); and in the treatment of sleep apneas and disorders of central origin (U.S. Pat. No. 5,612,379). U.S. Pat. No. 5,618,845 describes modafinil preparations of a defined particle size less than about 200 microns. In addition, modafinil may be used in the treatment of eating disorders, or to promote weight gain or stimulate appetite in humans or animals (U.S. Provisional Patent Application No. 60/150,071, incorporated herein by reference), or in the treatment of attention deficit hyperactivity disorder (ADHD), or fatigue, especially fatigue associated with multiple sclerosis (U.S. Provisional Patent Application No. 60/149,612, incorporated herein by reference).
Modafinil was known in the art in the form of a therapeutic package, marketed under the name Provigil®. Provigil® is a pharmaceutical product manufactured by Cephalon, Inc. of West Chester, Pa. and is also marketed by Cephalon, Inc. Provigil® is supplied as tablets containing 100 mg or 200 mg modafinil, with several excipients, including magnesium silicate and talc. In commercial use, modafinil-containing therapeutic packages in the prior art were labeled and otherwise indicated for use in narcolepsy patients.
It is desirable to optimize the formulation of a solid dose form of modafinil, and the methods of their preparation on a commercial scale. In particular, new formulations of modafinil have been discovered which exhibit comparable stability, dissolution rate, hardness, friability, thickness, disintegration, size and shape, and weight variation characteristics to that of Provigil®. Further, it has been discovered that a solid dose forms of modafinil can be prepared, with properties similar to that of Provigil®, without inclusion of magnesium silicate or talc.
In addition, the newly discovered formulations preferably use a minimal number of excipients, and use pharmaceutical grade excipients that are inexpensive, readily available and that facilitate cost-effective manufacture on a commercial scale.
Furthermore, there is a need to improve upon the manufacturing process of the tablet form of modafinil. Improvement in the commercial preparation include minimizing the number of excipients, eliminating the use of organic solvents, reducing the number of steps, and reducing the time and expense of manufacture. The present invention is directed to these, as well as other, important ends.

Pharmaceutical formulations of modafinil


A data packet communication system employs data encryption in a packet data convergence protocol (PDCP) and radio link control (RLC) in Layer 2 of transmission between a transmitter (TX) and a receiver (RX). A single sequence number is used for both the PDCP and RLC to reduce overhead by signaling a TX PDCP first ciphering sequence number to the RX prior to encrypted data packet communication. A sequence number accompanies each RLC PDU, which can encompass concatenated or segmented service data units (SDUs) from the higher layer PDCP. This sequence number is sufficient for the RLC to perform re-ordering, gap detection, retransmission, etc., while also allowing the RX upper layer PDCP to reconstruct a sequenced value used to encrypt content.

Evolving communication systems such as 3GPP Long Term Evolution (LTE) achieve greater economies and reduced latencies by co-locating functions in a flat architecture, such as combining two sub-layers that are deemed part of Layer 2 of a transceiver. For instance, a Packet Data Convergence Protocol (PDCP) previously in a core entity and a radio link control (RLC) previously in a radio network controller are both now with a physical layer in an enhanced base station, so called "Evolved Base Node (eNodeB)" per 3GPP standards. This enhanced base transceiver station (BTS) provides the LTE air interlace and performs radio resource management for the evolved access system.
With such co-location of protocols, opportunities exist for distributing certain communication processes that previously were all handled by a lower layer, such as the RLC. For example, it has been recently proposed that ciphering and data compression be performed in the PDCP upper layer rather than the RLC, which handles operations such as retransmissions. While certain advantages are realized by such distribution of functions, an overhead penalty results. This distributed function in the upper layer (e.g., PDCP) requires assigning of a sequence number to a PDU by the transmitting upper layer. The sequence number is used by the receiving upper layer after the PDU for purposes such as decryption. In addition, intervening transmitter and receiver respective lower layers (e.g., RLC) require their own sequence number for re-ordering, retransmission, gap detection, etc. Moreover, the RLC can concatenate or segment the PDUs from the upper layer adding additional complications in retrieving PDUs at the receiver.

Ciphering sequence number for an adjacent layer protocol in data packet communications