In an engine disk and blade combination, the metallic disk has a plurality of first blade attachment slots and a plurality of second blade attachment slots circumferentially interspersed with each other. There is a circumferential array of a plurality of first blades. Each first blade has an airfoil and an attachment root. The attachment roots are respectively received in associated said first attachment slots. There is a circumferential array of second blades. Each second blade has an airfoil and an attachment root. The attachment roots are respectively received in associated said second slots. The first blades and second blades are non-metallic. The first blades are radially longer than the second blades. The first slots are radially deeper than the second slots.

The disclosure relates to turbine blades. More particularly, the disclosure relates to attachment of non-metallic blades to turbine disks in gas turbine engines.
Gas turbine engines contain rotating blade stages in fan, compressor, and/or turbine sections of the engine.
In the turbine sections, high temperatures have imposed substantial constraints on materials. An exemplary turbine section blade is formed of a cast nickel-based superalloy having an internal air cooling passageway system and a thermal barrier coating (TBC). The exemplary blade has an airfoil extending radially outward from a platform. A so-called fir tree/dovetail attachment root depends from the platform and is accommodated in a complementary slot in a disk. The exemplary disk materials are powder metallurgical (PM) nickel-based superalloys.
The weight of nickel-based superalloys and the dilution associated with cooling air are both regarded as detrimental in turbine engine design.

Turbine rotor non-metallic blade attachment


We disclose a new method of preparing liquid crystal alignment layers that can produce controllable pretilt angles from near 0 to near 90°. It is based on the stacking of two alignment materials sequentially, with the first one being continuous and the second one being discontinuous leaving part of the first layer exposed.

There is a constant need for precisely controlled pretilt angles in a liquid crystal cell. Sometimes the pretilt angles needed for certain applications can be quite large and are difficult to reliably obtain using conventional alignment techniques.
U.S. Patent Application Publication No. 2005/0260426 to Kwok teaches a technique for generating a large controllable pretilt angle using inhomogeneous alignment surfaces. Instead of being uniform and composed of a single material, the alignment surface includes nano and micro-scale domains of different alignment materials. In particular, if the alignment materials are such that one kind is capable of generating a vertical alignment and the other kind is capable of generating a homogeneous or horizontal alignment, then the resultant surface generates an intermediate pretilt angle.
Kwok's published application applies random phase segregation upon drying of a binary mixture of different alignment materials. The distribution of domains is random, sometimes not uniform, and is difficult to control. Therefore, it is desired to fabricate an inhomogeneous alignment surface that is highly controllable and to generate a uniform alignment layer for large substrates.

Method to obtain a controlled pretilt and azimuthal angles in a liquid crystal cell

The Hong Kong University of Science and Technology


A cut-off wavelength measuring method according to the present invention includes: preparing a single mode fiber as a reference fiber; preparing a measurement target fiber; adjusting the length of the single mode fiber such that the length of the single mode fiber is longer than the that of the measurement target fiber at the time of measuring power of transmission light and the reference fiber propagates only light of a base mode at a predicted cut-off wavelength of the measurement target fiber; measuring wavelength dependence of power of light transmitted through the reference fiber and wavelength dependence of power of light transmitted through the measurement target fiber; and calculating a cut-off wavelength of the measurement target fiber based on wavelength dependence represented as the ratio of the power of transmission light transmitted through the measurement target fiber to the power of light transmitted through the reference fiber.

1. Field of the Invention
The present invention relates to a silica-based optical fiber that is used for optical fiber communication, and more particularly, to a method of measuring a minimum wavelength of a single-mode fiber for which the propagation mode is single, that is, a cut-off wavelength in the fiber.
2. Background Art
As a conventional method of measuring the cut-off wavelength of a single mode fiber, particularly, as a method of measuring an effective cut-off wavelength, for example, as illustrated in "Opto-electronic Measuring Instruments Guide, Thoroughly-Revised Edition", Optronics Co., Ltd., Published on Jun. 24, 2004, a bending method and a multi-mode excitation method are known.
In the bending method, a cut-off wavelength is calculated by using the difference between loss properties measured in a state in which a bending portion is not added to a single-mode fiber and a state in which a bending portion is added to the single mode fiber.
Schematic configurations of measurement systems for measuring a fiber cut-off wavelength according to the bending method by using a strand having a length of 2 m are illustrated in FIGS. 11A and 11B.
FIG. 11A illustrates a case where a bending portion is not effectively added to a measurement target fiber.
FIG. 11B illustrates a case where a bending portion is effectively added to the measurement target fiber.
In FIGS. 11A and 11B, reference numeral 10 is a light source unit.
The light source unit 10, for example, is configured of a white light source and a spectroscope that spectrally disperses white light emitted from the white light source.
The light emitted from the light source unit 10 is guided by a measurement target fiber 12 so as to be received by a light receiving unit 14.
As the measurement target fiber 12, the same single mode fiber is used in the case where a bending portion is added thereto (FIG. 11B) and a case where a bending portion is not added thereto (FIG. 11A).
In a case where measurement is performed without a bending portion being added to the measurement target fiber 12 (FIG. 11A), transmitted light is received by the light receiving unit 14 in a state in which a bending portion is not effectively added to the measurement target fiber 12.
On the other hand, in a case where measurement is performed with a bending portion being added to the measurement target fiber 12 (FIG. 11B), transmitted light is received by the light receiving unit 14 in a state in which a small bending portion B1 (for example, a bending portion of 60 mmφ is added to the measurement target fiber 12.
In the states illustrated in FIGS. 11A and 11B, the wavelength dependence of the transmission light power is measured.
A cut-off wavelength is calculated based on the ratio between the transmission light power in a case where there is bending and the transmission light power in a case where there is no bending.
Accordingly, the above-described bending method may be called a measurement method using a difference in bending loss between a base mode and a higher order mode of a single mode fiber.
In the cases illustrated in FIGS. 11A and 11B, a bending portion B2 of 280 mmφ is disposed on the measurement target fiber 12.
This is a bending portion that is determined based on standards.
The bending portion of 280 mmφ is a bending portion that does not substantially cause any bending loss.
In the description presented here, the "standards" represent standards on the measurement of a cut-off wavelength such as IEC 60793-1-44 "Measurement methods and test procedures—Cut-off wavelength", ITU-T G. 650.1 "Definitions and test methods for linear, deterministic attributes of single-mode fibre and cable", and JIS C 6825 "Test methods for structural parameters of optical fibers—Optical characteristics".
On the other hand, the multi-mode excitation method is a method of measuring a cut-off wavelength based on the ratio between the power of transmitted light transmitted through a multi-mode fiber (reference fiber) used as a reference, for example, a multi-mode fiber having a short length of 1 to 2 m and the transmission light power in a case where the measurement target fiber is excited in a multi-mode.
Schematic configurations of measurement systems used when a cut-off wavelength is measured by using the multi-mode excitation method are illustrated in FIGS. 12A and 12B.
FIG. 12A illustrates a measurement method using a reference fiber.
As the reference fiber 16, a multi-mode fiber having a short length is used, and the transmission light power of the reference fiber 16 is measured.
On the other hand, FIG. 12B illustrates a measurement method using a measurement target fiber.
Here, a reference fiber 16 is prepared which is configured of the same multi-mode fiber as the fiber used in the reference measurement.
The measurement target fiber 12 is connected to the output end of the reference fiber 16, and light transmitted through the reference fiber 16 and the measurement target fiber 12 is received by the light receiving unit 14 so as to measure the power of the transmitted light.
The cut-off wavelength of the measurement target fiber 12 is calculated based on the wavelength dependence that is represented by the ratio between the power of transmission light transmitted through the reference fiber 16 and the power of transmission light transmitted through the reference fiber 16 and the measurement target fiber 12.
This multi-mode excitation method is a method using a phenomenon in which the power of transmission light transmitted through the measurement target fiber 12 markedly changes in a wavelength region in which the mode is switched from a multi-mode to a single mode.
For measuring the measurement target fiber using the multi-mode excitation method (FIG. 12B), two bending portions (B3 and B4) of 80 mmφ formed so as to make one complete rotation around the measurement target fiber 12 are disposed at both ends of the measurement target fiber.
The reason for disposing the bending portions is that it is defined in the standard that one circulation of a bending portion of 80 mmφ and a plurality of circulations of a bending portion of 280 mmφ are arranged at both ends of a sample in a case where the cable cut-off wavelength is measured by using the sample having a length of 22 m.
In addition, in a case where the cut-off wavelength of a fiber using a strand of 2 m as the length of the measurement target fiber 12 is measured, similarly to the above-described bending method, the bending portions B3 and B4 are not disposed.
As cut-off wavelengths defined in the standards, there are a cable cut-off wavelength measured by using a fiber cable having a length of 22 m, a cable cut-off wavelength measured by using a fiber strand having a length of 22 m, a fiber cut-off wavelength measured by using a fiber strand having a length of 2 m, and a jumper cable cut-off wavelength measured by using a jumper cable having a length of 2 m.
In the methods of measuring the cut-off wavelength, while the methods of measuring the measurement target fiber are different from each other, as the method of measuring the reference fiber, one of the bending method and the multi-mode excitation method is used.
Incidentally, recently, low-bending loss optical fibers such as an HAF (Hole Assisted Fiber) and a trench-type optical fiber have been actively developed.
The low-bending loss optical fibers of such a kind are designed such that the effect of confining light in the core is increased.
In such low-bending loss optical fibers, the confinement effect is also increased for a higher order mode, and accordingly, it is difficult to remove the higher order mode with the degree of bending that is applied in the bending method.
Accordingly, it is difficult to calculate the cut-off wavelength with accuracy in the bending method.
Therefore, conventionally, in order to measure the cut-off wavelength of the low-bending loss optical fiber of such a kind, the multi-mode excitation method is generally used.
Now, the method of measuring the cut-off wavelength according to the multi-mode excitation method will be described in detail with reference to FIG. 13.
First, as described above, the power Psig(λ) of transmission light transmitted through a measurement target fiber and the power Pref(λ) of transmission light transmitted through a multi-mode fiber used as a reference fiber are measured, and the ratio A(λ) of the transmission light power Psig(λ) to the transmission light power Pref(λ) is acquired as a logarithmic ratio using A(λ)=10×log10 {Psig(λ)/Pref(λ)}.
The wavelength dependence spectrum of the ratio A(λ) is denoted by a thick solid line 18 in FIG. 13.
Here, in the measurement target fiber, from a long wavelength side toward a short wavelength side, the power Psig(λ) of the transmission light transmitted through the measurement target fiber drastically increases at a position close to a wavelength changing from the single mode propagation region (a region in which only light of the base mode is propagated) to the multi-mode propagation region (a region in which not only light of the base mode but also light of the higher order mode is propagated).
Accordingly, the wavelength dependence of the ratio A(λ) of the power Psig(λ) of transmission light transmitted through the measurement target fiber to the power Pref(λ) of transmission light transmitted through the multi-mode fiber used as a reference fiber, as illustrated in FIG. 13, also drastically increases from the long wavelength side to the short wavelength side at a position close to the wavelength for which the measurement target fiber changes from the single mode propagation region 20 to the multi-mode propagation region 22.
Thus, a straight line that is acquired by linearly approximating the spectrum, which is positioned on the long wavelength side corresponding to the single mode propagation region, of the measurement target fiber in compliance with a standard such as JIS will be referred to as a reference line (a thin solid line 24 shown in FIG. 13).
In addition, a wavelength corresponding to an intersection 28 of a straight line (a dashed-two dotted line 26 shown in FIG. 13) acquired by shifting the reference line by 0.1 dB in a parallel manner and the spectrum of the transmission light power ratio A(λ) is defined as a cut-off wavelength λ.
However, in the cut-off wavelength measurement according to the multi-mode excitation method, there are the following problems.
Since multi-mode propagation is performed by using the multi-mode fiber as the reference fiber, a variation (a variation in the shape of a wave shape, a ripple shape, or a hump shape) occurs over the entire multi-mode propagation wavelength region in the power Pref(λ) of the transmission light due to the wavelength dependence of the loss property.
For the power Psig(λ) of the transmission light transmitted through the single mode fiber used as the measurement target fiber, in a region (in other words, the single mode propagation region in which only light of the base mode is propagated) 20 located on the long wavelength side of the cut-off wavelength, single mode propagation is performed.
Accordingly, a large variation in the wave or the like does not substantially occur.
In addition, also in the transmission light power ratio A(λ), due to the wave occurring in the wavelength dependence of the loss property of the reference fiber, as illustrated in FIG. 13, a variation called a wave, a ripple, a hump (bump), or the like (hereinafter, it will be referred to as a "wave" as being a representative thereof) occurs in the wavelength property of the single mode propagation region 20 of the measurement target fiber.
Accordingly, in a case where the reference line 24 is determined by linearly approximating the long wavelength side of the transmission light power ratio A(λ), the cut-off wavelength λ acquired from an intersection 28 of the straight line 26 acquired by shifting the reference line 24 by 0.1 dB and the transmission light power ratio A(λ) on the short wavelength side without avoiding the occurrence of incorrectness, and cannot necessarily be considered as having an accurate value.
In other words, according to the linear approximation technique for a case where the reference line 24 is determined, deviation of different values of cut-off wavelengths from the same measurement data of the ratio of the power of the transmission light cannot be avoided, in other words, a variation occurs in the calculated cut-off wavelength depending on the calculation method.
Here, although the policy of the linear approximation technique for determining the reference line 24 is represented in the standards, a precise processing method for the wave or the like has not been determined.
As a method of measuring the cut-off wavelength that can solve the above-described problems of the multi-mode excitation method, a method called a single mode fiber reference method has been proposed in "2009 Processing 2 of the Society Conference of the Institute of Electronics, Information and Communication Engineers, Page 190, Proposal of Reliable Cut off Wavelength Measurement for Bend Insensitive Fiber".
According to the single mode fiber reference method, instead of the multi-mode fiber used in the multi-mode excitation method, a single mode fiber having a wavelength shorter than that of the measurement target fiber is prepared as the reference fiber.
Then, the power Psig(λ) of the transmission light transmitted through the measurement target fiber and the power Pref(λ) of the transmission light in a state in which a small bending portion of 60 mmφ is added to a single mode fiber (a fiber having a cut-off wavelength shorter than that of the measurement target fiber) used as the reference fiber are measured.
The ratio A(λ) of the transmission light power Psig(λ) to the transmission light power Pref(λ) is acquired by using the same method as that described above, and a long wavelength-side portion of the spectrum of the transmission light power ratio A(λ) is linearly approximated so as to acquire a reference line.
In addition, a wavelength corresponding to the short wavelength-side intersection of a straight line acquired by shifting the reference line by 0.1 dB and the transmission light power ratio A(λ) is determined as a cut-off wavelength.
In the single mode fiber reference method, a single mode fiber having a cut-off wavelength shorter than that of the measurement target fiber, to which a small bending portion of 60 mmφ is added, is used as the reference fiber.
Accordingly, unlike the case of the multi-mode excitation method, at least a large fluctuation does not occur in the transmission light power ratio A(λ) at least on the side of the long wavelength (single mode propagation region) longer than that at a position close to the cut-off wavelength of the measurement target fiber.
Accordingly, the reference line can be uniquely determined in an easy manner, and, as a result, the cut-off wavelength can be uniquely determined in an easy manner, whereby the occurrence of a variation in the calculated cut-off wavelength can be avoided.
Thus, in the single mode fiber reference method proposed in "2009 Processing 2 of the Society Conference of the Institute of Electronics, Information and Communication Engineers, Page 190, Proposal of Reliable Cut off Wavelength Measurement for Bend Insensitive Fiber", there are the following problems.
In the single mode fiber reference method, in order to perform accurate measurement, it is necessary to use a fiber having a cut-off wavelength that is sufficiently shorter than that of the measurement target fiber as a single mode fiber of the reference fiber.
In other words, in a case where a single mode fiber having a cut-off wavelength that is slightly shorter than that of the measurement target fiber is used as the reference fiber, between wavelength dependence of the power of transmission light transmitted through the measurement target fiber and that of the transmission light transmitted through the reference fiber, the transmission light power ratio A(λ) that is sufficient for calculating a cut-off wavelength cannot be acquired.
Accordingly, there is a case where it is difficult to accurately calculate a cut-off wavelength.
Accordingly, in the proposal disclosed in "2009 Processing 2 of the Society Conference of the Institute of Electronics, Information and Communication Engineers, Page 190, Proposal of Reliable Cut off Wavelength Measurement for Bend Insensitive Fiber", such problems are not considered, and, accordingly, there is concerned that accurate measurement cannot be performed.
Furthermore, in a case where the cut-off wavelength of a measurement target fiber is to be newly measured, there are cases where the cut-off wavelength of the measurement target fiber is shorter than the cut-off wavelengths of all the single mode fibers, which are known, prepared in advance.
In such a case, a reference fiber cannot be selected from the single mode fibers prepared in advance.
Consequently, in a practical measurement site, it cannot be determined that an appropriate reference fiber can be easily prepared in the single mode fiber reference method.

Method of measuring cut-off wavelength of optical fiber


A method of generating a surface grid may include forming a layer curve along the surface, forming a plurality of points along the layer curve, and extending a tangent vector from each one of the most recently formed points. Additional points may be formed on the surface at a step distance from the most recently formed points. The additional points may be interconnected to form an additional layer curve. The additional points may be connected with the most recently formed points to form a layer of quadrilateral faces wherein each one of the faces is a column. The growth of a column may be terminated when an aspect ratio of the face in the column exceeds a predetermined value. The steps of extending tangent vectors, forming the additional points, and forming an additional layer curve may be repeated until each one of the columns is terminated.

During the development of new products, manufacturers frequently rely on computer simulations to evaluate and refine the product design. For example, aerospace and automotive manufacturers rely on computational fluid dynamics (CFD) analysis to determine the interaction of fluids with the surfaces of an object. Manufacturers may also employ CFD analysis to analyze fluid processes such as cooling, mixing and heat transfer. In addition to CFD analysis, manufacturers may rely on computer simulations to evaluate the structural, acoustic and/or electromagnetic response of an object.
Computer simulations such as CFD analysis require the creation of a mesh or grid of elements on the surfaces of the object to be analyzed. For objects having high curvature in at least one direction, it is desirable that the grid is of relatively high resolution (i.e., a relatively fine mesh of grid elements) in the direction of high curvature in order to improve the degree of accuracy of the CFD solution. For example, the wing of an aircraft is generally straight along the leading edge with generally no curvature in the spanwise direction and therefore may require reduced grid resolution in the spanwise direction. However, in the chordwise direction, the wing has an airfoil shape with a relatively high degree of curvature at the leading edge such that the grid resolution at the leading edge along the chordwise direction is preferably higher than the grid resolution along the spanwise direction. Likewise, it is desirable that the grid has a relatively high degree of resolution in certain regions of interest of the object. For example, in the case of a wing, such regions of interest may comprise localized areas of the wing that may be subjected to shockwaves, vortices, localized flow separation and other phenomena.
The prior art includes several methods of generating a grid on an object. For example, one method automatically creates an isotropic grid across the surfaces of an object. Such method results in a grid having the same degree of resolution in all directions of the surface without regard to differences in curvature and without regard to regions of interest on the surfaces that may be subject to localized phenomena. Unfortunately, because of the unnecessarily high degree of resolution along directions of minimal curvature, CFD analysis using such a grid is computationally inefficient due to the relatively large quantity of elements that make up the total grid.
Another method of grid generation minimizes the quantity of elements along directions of low curvature while providing a relatively large quantity of elements along directions of high curvature. The method relies on manual insertion of rectangular grid elements in areas of high curvature or in regions or interest as a means to increase the grid resolution and improve the solution accuracy. Unfortunately, manual insertion of grid elements is labor intensive and can significantly add to the total amount of time required to generate a CFD solution.
A further approach to grid generation relies on automatic creation of anisotropic triangular grid elements having a relatively high aspect ratio in areas of high curvature or in regions of interest. Although the use of anisotropic triangular grid generation allows for control of the grid resolution in a desired direction, the quality of the grid suffers due to misalignment of the grid elements with the direction of curvature. For example, creation of an anisotropic triangular grid on a wing leading edge may result in elements that are misaligned with the direction of curvature which may reduce the accuracy of the CFD solution.
As can be seen, there exists a need in the art for a method for generating a grid on a surface of an object wherein the grid elements have relatively high resolution along directions of high curvature and relatively low resolution along directions of low curvature. Furthermore, there exists a need in the art for a method for generating a grid of high aspect ratio wherein the grid elements are generally aligned with the direction of curvature. Additionally, there exists a need in the art for a method for generating a grid wherein the grid elements transition from high resolution to low resolution in correspondence with a reduction in the degree of curvature along a direction of the surface such as along a chordwise direction of an airfoil section.


The present device generally relates to a waterless electronic hookah machine. The waterless electronic hookah machine has a main body portion, a handle section and a flexible wire cable (or “connector”). The flexible wire cable electrically connects the main body portion with the handle section. The handle section has a removable mouthpiece containing a cartridge having a liquid. When a user activates a push button or vacuum switch on the handle section, a power source in the main body portion sends power through the flexible wire cable to an atomizer located in the handle section which then heats the liquid in the cartridge of the mouthpiece and a vapor is created for the user to inhale. The device allows multiple users (generally up to six) to use the device at the same time wherein each user may experience a different flavor smoke. Flavors may be easily switched without the need to rinse out the electronic hookah machine. The user is able to adjust the voltage going to the handle.

The present device generally relates to a waterless electronic hookah machine. The waterless electronic hookah machine has a main body portion, a handle section and a flexible wire cable (or "connector"). The flexible wire cable electrically connects the main body portion with the handle section. The handle section has a removable mouthpiece containing a cartridge having a liquid. When a user activates a push button or vacuum switch on the handle section, a power source in the main body portion sends power through the flexible wire cable to an atomizer located in the handle section which then heats the liquid in the cartridge of the mouthpiece and a vapor is created for the user to inhale. The device allows multiple users (generally up to six) to use the device at the same time wherein each user may experience a different flavor smoke. Flavors may be easily switched without the need to rinse out the electronic hookah machine. The user is able to adjust the voltage going to the handle.
As a result of the health issues and restrictions on locations associated with permissible smoking, people have attempted to move away from the traditional smoking of tobacco. For example, U.S. Pat. No. 8,205,622 to Pan discloses an electronic cigarette having two tubes that resemble a cigarette: an electronic inhaler and an electronic atomizer. The two tubes are connected through one or more electric connectors to form an electronic cigarette. Inside the inhaler is a rechargeable or non-rechargeable power source such as a battery, which supplies electric power to the electronic inhaler and atomizer and ensures that both work together like a cigarette. In addition to the power source, the inhaler also includes other major components: an electric airflow sensor to detect air movement generated by a user's inhaling or puffing act and a Single Chip Micyoco which controls the atomization process. The sensor's role is to collect an airflow signal that triggers the Single Chip Micyoco, which in turn instructs the electronic cigarette to supply electric power to the inhaler and atomizer connected through an electric connector. Inside the electronic atomizer are an electric connector, electric heating wire, liquid container, and atomizer cap with an air-puffing hole. The user inhales through the air-puffing hole at an end of the electronic cigarette to create an air inflow, which triggers the atomization process. The Single Chip Micyoco driven by a software program controls the electronic cigarette in an on/off manner according to the signal detected by the electric sensor on the airflow and completes a cycle of atomization, which converts a solution of a liquid form inside the liquid container to a gas form. This entire process achieves the emulated smoking process of a user, who is satisfied with scent taste that mimics cigarette smoking.
Further, U.S. Pat. No. 7,845,359 to Montaser discloses an artificial cigarette, inhaler or other nebulizer device having a housing, an air passage into the housing, a fog generator chamber within the housing connected to the air passage, a liquid source connected to the fog generating chamber, and a fog generator within the fog generating chamber for receiving liquid from the liquid source and creating an aerosol. The fog generator may be an ultrasonic nebulizer and/or a pneumatic nebulizer.
However, these electronic smoking machines fail to disclose a waterless electronic hookah machine which allows a user to quickly and easily change the flavor of the hookah smoke. A need, therefore, exists for an improved electronic hookah machine which is safe, sanitary and easy to use.


The invention relates to a process for producing all trans-vitamin A ester (I). According to the present invention, vitamin A ester (I) can simply be synthesized in good yields and high purity by the reaction of phosphonate compound (IV) with aldehyde (II) in an organic solvent in the presence of a base.

The present invention relates to a novel process for producing vitamin A ester and especially to a process for producing all trans-vitamin A ester.
Vitamin A is a known compound. Its chemical formula is represented as following:
Vitamin A ester of formula (I) such as, acetate or palmitate are used in great quantities as medicines, food additives and feed additives, etc. A variety of methods for the synthesis of vitamin A and its derivatives have been proposed.
Among those methods, there are three routines relating to Wittig or Wittig-Homer reaction:
The disadvantage of routine 1 lies in the fact that the triphenylphosphine reactant required for the synthesis is relatively expensive and that the byproduct of the reaction, i.e., Ph3PO, is water insoluble, thus it is difficult to isolate the desired product. In routine 2, Wittig-Horner reaction is employed to overcome the shortages existing in routine 1, the byproduct phosphonate is soluble in water, and thus can easily be isolated from desired product. However, the expected product is retinoic acid ester rather than vitamin A ester. In routine 3, intermediate aldehyde (II) in routine 1 and intermediate phosphonate compound (III) in routine 2 were employed to synthesize vitamin A ester directly.
The phosphonate compound (III) can be obtained by the following reactions: (see U.S. Pat. No. 4,916,4250)
Starting from routine 3, it is an object of this invention to provide an improved process for more conveniently producing vitamin A ester, especially all trans-vitamin A ester in good yields. The advantages of this invention will become apparent from the following descriptions.
This object can be reached by a process for preparation of vitamin A ester, especially all trans-vitamin A ester of formula (I) which comprises treating compound represented by the formula (IV) with aldehyde represented by the formula (II) in an organic solvent in the presence of a base.
wherein R1=3-methyl-1,3-pentadienyl or 3-methyl-1, 4-pentadienyl, R2 and R3 are identical or different and are C1-C4-alkyl
R4 is C1-C15-hydrocarbyl.
Compound (IV) includes:
A; 3-methyl-5-(2, 6, 6-trimethyl-1-cyclohexen-1-yl)-1, 3-pentadienyl-phosphonic acid dialkyl ester
B: 3-methyl-5(2, 6, 6-trimethyl-1-cyclohexen-1-yl)-1, 4-pentadienyl-phosphonic acid dialkyl ester or
C: the mixture of A and B in any ratios
In CN 1097414A, compound (III), which was employed as starting material to synthesize vitamin A ester, was obtained by isomerization of compound (IV). However, according to the present invention, compound (IV) is directly employed as starting material to synthesize vitamin A ester. Due to the omission of isomerization step, vitamin A ester can be prepared in a more simply manner and higher yield according to the process of tie present invention,
In present invention, R2 and R3 are identical or different and represent C1-C4 alkyl, for example methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-butyl, sec-butyl and tert-butyl, preferably methyl, ethyl, isopropyl. R4 represents saturated or unsaturated C1-C15 hydrocarbyl, for example, alkyl, alkenyl etc., preferably C1-C15 alkyl, for example, C1-C4-alkyl as mentioned above, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl and the isomer thereof, especially preferably methyl, ethyl, pentadecyl.
It is believed that the mechanism of this reaction is as follows:
According to the process of this invention, vitamin A ester can be obtained by the reaction of compound (II) with intermediate carbanion (V), which is generated when compound (IV) is treated with a proper base. Suitable base is inorganic base or organic base. Preferred inorganic base includes, for example, alkali metal hydrides such as sodium hydride and potassium hydride. Preferred organic base includes organic base of alkali metal, for example, alkali metal alkoxides such as sodium tert-butoxide alkali potassium tert-butoxide, alkali metal salt of sulfoxides such as dimsyl sodium and dimsyl potassium, organolithium compounds such as methyllithium and n-butyllithium; organomagnesium halides such as ethylmagnesium chloride.
The amount of the base is not critical, the molar ratio of base to the compound of formula (IV) is generally from about 1 to about 3, preferably from about 1 to about 2. The molar ratio of the compound of formula (II) to the compound of formula (IV) is generally from about 1 to about 2.
In general, the reaction is carried out in an organic solvent. Any organic solvents which do not adversely affect the reaction can be employed. Preferred organic solvents include two types of organic solvents: (1) nonpolar aprotic solvents, for example, hydrocarbons such as benzene, hexane, cyclohexane, toluene; ethers such as tetrahydrofuran, diisopropyl ether; (2) polar aprotic solvents, for example, sulfoxides such as DMSO, ketones such as acetone, nitrites such as acetonitrile, amides such as DMF, HMPT. These solvents may be used either singly or in combination. Preferably, two types of solvents are used in combination. The amount of the solvent is not critical. Generally, it is advantageous that from about 0.05 to about 1 mole, preferably from about 0.1 to about 0.5 mole of compound (IV) are employed per liter of solvent. The temperature at which the reaction is carried out may be varied in wide rang upon the type of the used base. Generally, the suitable temperature is from about xe2x88x9270xc2x0 C. to about 70xc2x0 C., preferably from about xe2x88x9270xc2x0 C. to about 0xc2x0 C. The reaction is preferably carried out in an atmosphere of an inert gas such as helium, nitrogen or argon The time of reaction is not critical, generally from 30 minutes to 5 hours, preferably from 2 to 4 hours. Preferably, compound (IV) and base are added in the solvent prior to compound (II).
By the aforesaid reaction, vitamin A ester predominantly containing all trans-vitamin A is formed in good yields from the compound of formula (IV).
The resulting vitamin A ester of formula (I) can be isolated and separated from the reaction mixture in a known manner. For example, water or an aqueous solution of ammonium chloride etc., is added to the reaction mixture, and the organic phase is separated from the mixture. If necessary, the organic phase is washed with water and dried over anhydrous sodium sulfate, and the solvent is evaporated under reduced pressure to separate vitamin A ester. If necessary, the product may be purified, for example, by recrystallization to give vitamin A ester of high purity.
According to the present invention, all trans-vitamin A derivatives can be obtained in good yields and high purity, the content of other isomers such as 9-cis, 11-cis, and 13-cis isomers is very low. It is easy to obtain all trans-vitamin A derivatives from the formed product by conventional purifying means such as recrystallization,
Compound of formula (IV) can easily be obtained according to known methods or in analogy to the known methods, for example, it can be obtained from starting material xcex2-ionone according to the method described in U.S. Pat. No. 4,916,250,
As to the synthesis of compound of formula (II), reference is made to, for example,
Reif W. et al., Chemie. Ing. Techn, 1973; 45 (10a); 648;
Eletti-Bianchi G. et al., J. Org. Chem. 1976; Vol. 41: 1648;
J. Org. Chem, Vol. 42, 1977, 2939;
U.S. Pat. No. 5,527,952;
J. Org. Chem. Vol, 44, 1979, 1716

Zhejiang Medicine Co., Ltd., Xinchang Pharmaceutical Factory


Apparatus for classifying tobacco includes a plurality of vertical lift, single-pass, closed loop apparatus projecting a stream of mixed tobacco components across a classifying chamber of each module, and a portion thereof directly into the infeed apparatus of the next downstream module. A common porous conveyor extending through the modules of the closed loop air stream removes tobacco heavies. A second lower reversible conveyor removes overflow and dust or other particles falling out of suspension and deposits same in the heavier discharge or in another collection point. The modules as well as the infeed apparatus are interchangeable.

In the processing of tobacco, threshers are used to remove tobacco leaf or lamina from the stem portions of the plant. The mixed stem and leaf fractions are discharged from the thresher in a mixed stream of tobacco material. This stream is then typically conveyed to a classifier or separator where the lighter fractions such as lamina, are separated from the heavier fractions, such as stem or stem with leaf attached. One such separator is disclosed, for example, in U.S. Pat. No. 4,915,824.
To improve the integrity of the separated components, it has been proposed to link several classifiers together, with each discharging the heavy components directly into another classifier. Another proposal has been to project a mixed tobacco stream across a large chamber having a plurality of "lights" discharge openings fed by means of an inclined upward air flow. While these suggestions have been referred to as being "modular," they do not present modular apparatus in the true sense of the word since the respective separators and other components are not interchangeable.
Moreover, it has been observed that most tobacco classifiers must be cleaned out daily, consuming time and detracting from operation efficiency.
Accordingly, it has been one objective of this invention to provide a modular classifying apparatus wherein the modules and other components are interchangeable.
A further objective of the invention has been to provide self-cleaning modular classifier apparatus.
A further objective of the invention has been to provide a classifying module and infeed apparatus which can be combined or interchanged with other modules and infeeds for classifying light fractions from heavier fractions in a mix thereof introduced to each module.

The Standard Commercial Tobacco Company, Inc.


A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.

The present invention relates to an electronic device which is integrated in a semiconductor substrate. More particularly, it relates to a structure of an electronic device that can be integrated monolithically in a semiconductor, e.g., a FET (Field-Effect Transistor).
The invention further relates to an integrated memory circuit comprising a plurality of such transistors. The invention is directed to increase the number of memory cells that are integrated in the semiconductor material, and improve the quality of the information that is stored in the memory.
Current technologies for fabricating semiconductor integrated devices have led to a large reduction in the circuit area requirements of individual electronic devices. In the case of a FET, this is achieved by progressively reducing the size of the FET active areas that compose the basic blocks of most electronic circuits. Sub-micron size (e.g., 0.18-micron) transistors can be currently obtained, and the scaling-down trend shows no signs that it may end there with the integration process.
All types of semiconductor circuits have benefited from the intensified integration, and especially so integrated memory circuits having non-volatile memory cells, such as EPROM, EEPROM and Flash-EEPROM cells, integrated therein.
There are two types of non-volatile memories which are comprised of floating-gate transistors. The first type is represented by EPROMs and can be programmed electrically and erased optically.
The second type, represented by EEPROMs and Flash-EEPROMs, allows the stored information to be modified electrically for both writing and erasing.
In either cases, the information is recorded in the memory in the form of electric charges that are stored into the floating gates of the transistors.
EEPROMs will be specifically considered here, in which the state of any memory cell, or of the floating-gate transistor comprising the cell, can be altered by causing electrons to flow through a thin layer of silicon oxide by tunnel effect.
It is well known to the skilled persons in the art that EEPROMs exist in two main types, i.e., one type having a single polysilicon level provided to form the floating gate region, and another type having two discrete polysilicon levels provided to also form a control gate region. This distinction is, however, irrelevant to this invention.
The individual non-volatile EEPROM cell comprises a FET or a MOSFET transistor having a drain region and a source region. These regions are integrated in a semiconductor substrate and isolated from each other by a substrate portion known as the channel region. A floating gate region is formed above the substrate and is separated from the latter by a thin layer of a dielectric oxide known as the tunnel oxide.
When the conduction channel of the floating-gate transistor is put in a saturated state, the agitation of the hot carriers (consisting of electrons when the channel is of the N type) releases sufficient energy for them to flow past the barrier formed by the tunnel oxide between the conduction channel and the floating gate. The hot carriers then become trapped within the floating gate.
With a sufficiently high program voltage, the electrons trapped in the floating gate will be unable to leave it, although they keep being agitated. However, this agitation produces inadequate energy for them to get out of the floating gate. As a result, these electrons block the conduction channel with an electric field.
To erase the cell, a high voltage is applied to the drains and sources of the floating-gate transistors, with the floating gate held at a zero potential. Under such conditions, a powerful reverse electric field is created in the transistor, which causes the trapped carriers to migrate toward the drain or the source electrode.
It can be appreciated from the foregoing that, for the purpose of an intensified integration, any reduction in size of these memory cells goes forcibly through a reduction of the coupling surfaces between the floating gates and the conduction channels of the floating-gate transistors. This reduction of the coupling surfaces alters the conditions for conduction by the transistor channel so deeply that the thickness of the tunnel oxide also has to be reduced, down to less than 80 xc3x85ngstrxc3x6ms (1 xc3x85ngstrxc3x6m=0.1 nm).
The thickness of the tunnel oxide turns out to be very difficult to reduce for two reasons. On the onehand, with the decrease of thickness, fault density is bound to increase and the rate of product acceptance decrease. On the otherhand, charge (or electron) retention in the floating gates diminishes with reduction in thickness.
In(reality?), due to their agitation, the electrons do flow at least to some degree past the barrier created by the thick gate oxide. As a result, the information stored in a memory location will vanish gradually. It is presently estimated to practically disappear over a 10-year period. If the tunnel oxide were provided at a thinner dimension, this retention time would be greatly shortened.
In order to reduce the dimension of the thin layer of tunnel oxide while retaining its primary dielectric function, other migrating mechanism has been considered whereby the electrons flow along a conduction path other than the dielectric oxide barrier, and become trapped in the floating gate region. For example, as pointed out by D. I. Gittins et al., Nature, 11.02.2000, vol. 408, pages 67-69, there exist organic molecules that contain redox centers, i.e., chemical species whose oxidation number (and hence, electron structure) can be modified reversibly. These molecules support a so-called resonant tunneling, and perform promisingly when provided as molecular layers between electric contacts. However, their integration to more complex structures still poses some problems.
Exemplary of such molecules are compounds that contain a reversibly reducible bipyridinium group centrally located, e.g., N,N-di-(10-mercaptodecyl)-4,4xe2x80x2-bipyridinium dibromide.
These compounds usually contain terminal thiol-groups in order for them to become bonded to the gold of electrodes used for electrical measuring purposes.
Since it would be extremely difficult to provide gold electrodes in the form of parallel plates spaced one molecule-length (approximately 3 nm) apart, the above molecules are tested by bonding them with one end to one electrode and with the other end to a gold nano-particle (measuring about 6 nm in diameter) that, in turn, is used as a contact of a scanning tunnelling microscope operated in an electric-probe mode.
While the above-outlined arrangement is useful as far as determining the electrical characteristics of the molecules and controlling the conduction mechanisms and paths (tunneling, resonant tunneling, etc.) is concerned, it is incompatible with silicon-integrated circuits.
Accordingly, there exists in the art a need for methods of integrating molecular layers to conventional silicon-based microelectronic structures and enabling them to function as carriers of electrically charged particles. The present invention satisfies this need and provides further related advantages.
One aspect of the present invention is to provide a hybrid configuration in which organic molecules are bonded to conventional silicon-based microelectronic structures and enabling them to function as carriers of electrically charged particles. It was found that the basic component of nearly all integrated electronic circuits, i.e., the MOS or the MOSFET transistor, would meet the requirement of receiving said molecules.
In one embodiment, the present invention is related to a method of controlling and modulating the charge flow through a dielectric oxide of a MOS transistor, wherein the transistor structure comprises a layer of silicon oxide (gate oxide) formed between two silicon plates, with the plates overhanging the silicon oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape and a height of about 3 nm, said method comprising the steps of:
chemically altering the surfaces of said silicon plates to have different functional groups in said undercut from those in the remainder of the surfaces; and
selectively reacting said functional groups located at the undercut with an organic molecule so as to establish a covalent bond to each of the molecule ends, said molecule containing a reversibly reducible center and having a molecular length of about 3 nm.
said organic molecule has the formula R1xe2x80x94Yxe2x80x94R1,
wherein,
Y is a redox center having the following formula:
xe2x80x83R1 is a xe2x80x94CH2xe2x80x94(CHR2)nxe2x80x94R3 chain, wherein n=6-8;
R2 is H or C1-C6alkyl group;
R3 is selected from a group consisting of xe2x80x94CH2xe2x80x94CH2xe2x80x94X, xe2x80x94CHxe2x95x90CH2, xe2x80x94Cxe2x89xa1CH, and Cxe2x89xa1N, wherein X is either xe2x80x94SH or xe2x80x94SiH2Cl; and Zxe2x88x92 is a monovalent anion.
In another embodiment, the instant invention is related to a transistor structure comprising a layer of dielectric silicon oxide formed between two silicon plates, wherein said plates overhang said oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape and a preset height, and wherein the surfaces of said plates at said undercut have different functional groups from those in the other surfaces.
The features and advantages of the method according to the invention will be apparent from the following description of an embodiment thereof, given by way of example and not of limitation with reference to the accompanying drawings.

Semiconductor integrated electronic device and corresponding manufacturing method


Techniques for delivering and receiving multicast content across a unicast network are described. A system that supports delivery and reception of multicast content across a unicast network includes a first device and a second device. The first device may be a destination device or a multicast-enabled router. The second device is multicast-enabled, and may be a multicast-enabled router. The first device determines whether a route between a destination device and a source of multicast packets is multicast-enabled, sends a unicast request message that includes as a destination address an address associated with the source and is marked for interception by a second device based on the determination, and receives the multicast packets as unicast packets from the second device. The second device intercepts the unicast request message and delivers the multicast packets to the requesting device as unicast packets in response to the unicast request message. The unicast request message indicates the address of the source and a group address, i.e., a source/group address pair, associated with the multicast packets that the first device wishes to receive.

A computer network is a collection of interconnected computing devices that exchange data and share resources. In a packet-based network, such as the Internet, the computing devices communicate data by dividing the data into small blocks called packets. The packets are individually routed across the network from a source device to a destination device. The destination device extracts the data from the packets and assembles the data into its original form. Dividing the data into packets enables the source device to resend only those individual packets that may be lost during transmission.
Certain devices within a network, referred to as routers, maintain routing information that describes available routes through the network. Each route defines a path between two locations on the network. Upon receiving an incoming data packet, the router examines header information within the packet to identify the destination for the packet. Based on the header information, the router accesses the routing information, selects an appropriate route for the packet and forwards the packet accordingly.
Multicasting is a form of communication that allows a source device to send a single packet for distribution to multiple destination devices. With multicasting, the source device sends a single packet over the network to a router configured for multicasting. The router replicates the packet and forwards the copies to other multicast-enabled routers. The other routers, in turn, replicate the packet and repeat the forwarding process so that each of the destination devices receives a copy of the packet.
In some cases, there is not a multicast-enabled route from a source device to a particular destination device, i.e., a route where every router thereon is multicast-enabled. In these cases, the particular destination device is unable to receive multicast packets using existing multicasting protocols. To gain maximum audience size, multicast content providers generate copies of the multicast packets addressed to each such destination device, i.e., unicast packet copies of the multicast packets, at the source of the multicast packets, and deliver the unicast packets to these destination devices from the source of the multicast packets.
Content providers may incur increased costs stemming from the generation and delivery of the unicast packets. These costs may include the increased processing and memory resources required to generate and uniquely address unicast packets for each such destination device. The content providers may have to use multiple servers to provide the multiple unicast packet copies of the multicast packets. Further, delivery of the multiple unicast packets may lead to greater bandwidth consumption within the local network for the content provider, and require that the content provider obtain a greater bandwidth connection to the Internet than would otherwise be required to deliver the single set of multicast packets, the cost of which will likely be passed to the content provider by an Internet Service Provider (ISP), or the like.

Delivering and receiving multicast content across a unicast network


The present invention provides a separation method of separating (A) and (B), comprising: a step of separating at least either an active hydrogen-containing compound (A) or a compound (B) that reversibly reacts with (A) from a mixture containing (A) and (B) by distillation in a multistage distillation column; and a step of supplying the mixture to an inactive region formed within the multistage distillation column.

Distillation is generally used for separating a gas composition composed of a plurality of components. Distillation is an operation of condensing a specific component of a mixture utilizing the difference in vapor pressure between the component substances. By heating a mixture to be distilled, each component is gradually evaporated from the surface, and boiling starts when the sum of vapor pressures of the components is consistent with the pressure of the system. The composition of the generated vapor is then almost determined from both the component composition of the surface and the vapor pressures (partial pressures) of the components at that temperature according to the Raoult's law. Batch distillation and continuous distillation are known as industrial distillation methods.
The evaporation behavior does not involve reaction between the components to be separated. On the other hand, an evaporation behavior involving reaction between gas components, between liquid layer components or between gas-liquid layer components is a complex evaporation behavior.
For example, conventionally, when the equilibrium of an equilibrium reaction is not biased toward the system of formation, the reaction efficiency (equilibrium conversion rate) is generally increased by separating at least one of the products from the reaction system and biasing the equilibrium toward the system of formation. Various methods are known as methods for separating a product from the reaction system. Among these, distillation separation is one of the methods most commonly performed. A method of allowing the reaction to proceed by shifting the equilibrium reaction toward the system of formation while removing a product from the reaction system by distillation is called reactive distillation. For example, Non Patent Literature 1 describes the explanation of reactive distillation by presenting specific examples.
Reactive distillation is generally implemented using a distillation column such as a continuous multistage distillation column. When reactive distillation is performed in a distillation column, a higher-boiling component contained in the reaction liquid is distributed more in a lower stage of the distillation column and a lower-boiling component is distributed more in an upper stage of the distillation column in accordance with the progress of the reaction. Accordingly, in a distillation column, the temperature in the column (liquid temperature) decreases from the bottom to the top of the column. The reaction rate of an equilibrium reaction decreases as the temperature decreases. For this reason, when reactive distillation is performed in the distillation column, the reaction rate decreases from the bottom to the top of the column. Specifically, the reaction efficiency of the equilibrium reaction decreases from the bottom to the top of the column.
In this context, further raising the temperature in the column has been studied to improve the reaction efficiency (i.e., to increase the reaction rate). Patent Literature 1 discloses a method of allowing the reaction to advantageously proceed by supplying a solvent to a reactive distillation column to raise the temperature in the reactive distillation column as a method of efficiently performing an equilibrium reaction represented by Raw material (P)+Raw material (Q)<=>Product (R)+Product (S) (e.g., ester exchange reaction).
However, it is difficult to separate a raw material or a product by distillation while suppressing an undesired reversible reaction as much as possible in a system involving the above-described equilibrium reaction represented by Raw material (P)+Raw material (Q)<=>Product (R)+Product (S), or in a system involving an equilibrium reaction represented by Raw material (P)<=>Product (R)+Product (S). In general, distillation separation is often performed in a high temperature condition even under reduced pressure, and it is difficult to suppress an undesired reversible reaction. For example, it is often undesirable to apply the above-described method to separation by distillation of a mixture containing an active hydrogen-containing compound and a compound that reversibly reacts with the active hydrogen-containing compound, for example.
Examples involving such an undesired reversible reaction include separation of an unreacted monomer by distillation in a method of producing a trifunctional or higher functional polyisocyanate by polymerizing a difunctional isocyanate monomer. In contrast, for example, Patent Literature 1 describes the fact that an allophanated isocyanate was obtained by a method of reacting isophorone diisocyanate with a partially propoxylated glycerol and then removing the unreacted monomer using a thin film evaporator. Patent Literature 2 also describes the fact that an allophanated isocyanate was obtained by a method of reacting hexamethylene diisocyanate with 1-butanol and then removing the excess monomer by continuous distillation.


The present disclosure provide a positioning structure, a backlight source, a display module, and a display device, and the positioning structure is applied to a backlight source include a light guide plate and an optical film, the positioning structure includes a structural body, the structural body includes: multiple protruding structures spaced from each other, an end portion of each of the protruding structures adjacent to the light guide plate forming a contact positioning surface, and at least two contact positioning surfaces located in a same plane forming a first positioning surface for positioning an end surface of the light guide plate; wherein the structural body is provided with a second positioning surface for positioning an end surface of the optical film of the backlight source, and the second positioning surface and the first positioning surface are located at different planes.

A liquid crystal display (LCD) includes a liquid crystal display panel and a backlight source, and the backlight source provides a light source for the liquid crystal display panel such that the LCD can display an image.
In general, main components of the backlight source include a back plate, a border, a plastic frame, an optical film, a light guide plate, and a light-emitting diode (LED) light bar, etc., and may further include positioning structures for positioning the light guide plate and the optical film, respectively.

Positioning structure, backlight source, display module and display device


A micromachining device that utilizes a solid state laser beam scanner to steer and scan laser beams onto a moveable stage. There are no moving parts as in the galvometric scanner devices in current use. The laser beam scanner has two components, a variable frequency signal generator that is electrically connected to at least one substantially transparent and partially conductive substrate plate (hereinafter plate) with a generally planar face thereon that has a series of quantum dots (of an arbitrary size but narrow size distribution) affixed with the plate, where each of the quantum dots possess an inducible dipole moment, and each of the quantum dots are in electrical contact with the plate, where the quantum dots undergo an excitation and successive recombination (or relaxation) by the input of magnetic, optical or electrical signals.

Laser micromachining is a common technique for the fabrication or drilling, shaping or etching of minutely dimensioned parts. Commonly, these are a series of through orifices or similar subtractive features placed within relatively small and precise dimensions relative to one other or within precise locations on the substrate or part being machined. Since these parts are commonly processed in bulk and with numerous features per part, speed is of the utmost importance.
Generally, the parts are put onto an X-Y or X-Y-Z stage (a moving platform) that have their directional motion motors (or linear or air bearing motors) driven by a controller (microprocessor or other logic device) beneath a laser beam that is steered by a galvonometer scanner that, with another signal from the same controller, quickly adjusts the angles of the steering mirrors that the laser's beam is reflected, thus projecting it onto its desired location of machining with a high degree of accuracy and precision. The controller also synchronizes the power, timing and duration of the laser pulses that are steered by the galvanometer scanner to affect micromachining at the desired location set by the set of software instructions in the machining application of the controller responsible for operating the system in coordinated and perhaps also in coordinated compound motion commonly practiced in the art.
The drawbacks of this type of micromachining device lie in the performance of the galvanometer scanner. As a moving mass, it is prone to mirror vibration, shaft breakage, mechanical wear, backlash in the mirror movements, and inertial compensation time loss and positional uncertainty experienced at the positions of the shaft where peak acceleration occurs during directional changes. All of these drawbacks contribute to slower, less precise micromachining and ultimately place limits on the size and precision of the dimensions of the resultant product that is bored, shaped machined, textured or etched into its final configuration. Presently, the limit of the speed of laser beam scanning in such micromachining devices is between five and 50 meters per second, with some polygon scanner capable of 100 meters per second, but with a necessary accuracy and precision penalty directly proportional to the liner speed at which the scanners are operated.
Thus, a micromachining device able to increase the precision and speed over the existing state of the art micromachining devices with low failure rate, would fulfill a long felt need in this industry. This new invention utilizes and combines known and new technologies in a unique and novel configuration to overcome the aforementioned problems and accomplish the desired performance improvement.

This patent is subject to a terminal disclaimer.

High speed solid state micromachining device


Methods and an apparatus for dynamic best fit compilation of mixed mode instructions are provided. In one embodiment, a provided method includes receiving a non-native software instruction at a device, generating a first native software instruction from a first instruction set based on the non-native software instruction, the generation of the first native software instruction occurring at the device, executing the first native software instruction at the device, generating a second native software instruction from a second instruction set based on the non-native software instruction, the generation of the second native software instruction occurring at the device, and executing the second native software instruction at the device.

Embedded systems (e.g., wireless communication devices, wireless data devices, etc.) are in ever growing demand. The types of resources available on embedded systems vary greatly in terms of static and dynamic memory, processing power, display size, battery life, input/output capabilities, etc. Accordingly, there is very little convergence of hardware and software on embedded systems.
As is known to those having ordinary skills in the art, there are many benefits to developing an embedded system using an intermediate language (IL), such as Java, C#, etc., rather than a natively compiled language (e.g., the C programming language). First, porting intermediate language modules to multiple platforms is possible without modifications to the source code unlike with most compiled languages. Second, intermediate languages and their runtime environments often have bug eliminating features such as array bounds checking, automatic garbage collection, and built-in exception-handling, that many compiled languages do not have. Third, intermediate languages typically run quicker than a totally interpreted language.
Realizing the foregoing advantages of intermediate languages, embedded systems are slowly migrating toward intermediate languages operating on runtime environments. As application software derives greater value from runtime environments, it's expected that many future applications will be written using an intermediate language.
One of the most prohibitive factors of using intermediate languages on embedded systems is the speed of execution. While intermediate languages typically operate quicker than interpreted languages, intermediate languages are usually slower than natively compiled languages. For example, intermediate languages such as Java may be up to three or four times slower than natively compiled languages such as C.
One technique for speeding up intermediate language instructions comprises generating native instructions from some of the intermediate language instructions. Typically, only the most frequently used code paths are compiled into native code, and the rest of the code is left as intermediate instructions. While this prior art technique may improve performance, generating native instructions from some of the intermediate language instructions only utilizes a single instruction set of a processor.
Mixed mode processors such as an ARM (previously, the Advanced RISC (Reduced Instruction Set Computer), and prior to that the Acorn RISC Machine, and now simply ARM) compliant processor, have two or more instruction sets such as, for example, a 16-bit instruction set (the Thumb instruction set) and a 32-bit instruction set (the ARM instruction set). Each of these instruction sets has advantages and disadvantages based on how the instruction sets are utilized. For example, the 16-bit Thumb instruction set typically encodes the functionality of the 32-bit ARM instruction in half the number of bits, thereby creating higher code density. An ARM instruction, however, typically has more semantic content than does a Thumb instruction. As is known to those having ordinary skills in the art, this means that an operation implemented with Thumb instructions may require more instructions to perform the equivalent operation implemented with ARM instructions (e.g., 40% more instructions). For example, to use a 16-bit immediate data location, the Thumb instruction set would require two more instructions to move the data into a register than would the ARM instruction set.
Depending on the memory configuration of a system, the ARM code may run significantly faster than the corresponding Thumb code does or vice-versa. For example, it has been estimated that with 32-bit memory, ARM code will run 40% faster than the corresponding Thumb code. However, with 16-bit memory, Thumb code may run 45% faster than the corresponding ARM code. Accordingly, with such large differences in speed and storage characteristics based on individual embedded systems configurations, there is a significant drawback to compiling intermediate language exclusively into one instruction set (e.g., the ARM instruction set). In addition, there is a significant drawback to not compiling all intermediate language instructions into native instructions.

Methods and apparatus for dynamic best fit compilation of mixed mode instructions


A large capacity automatic printer paper tray operatively mounts a printing device to its upper extent. A paper support is disposed in a frame of the paper tray and is slideably supported by vertical frame rails. A drive screw rotatably secured in the frame is operatively coupled to the paper support. An actuator motor operatively drives the drive screw to raise and lower the paper support. Lower and upper limit sensors control the motor to limit downward and upward movement of the paper support. A paper pick-up interface plate transfers a top paper from the paper support into a paper pick-up roller of the mounted print device, via a feed roller of the print device. A pull-track sensor operates the motor to maintain a top level of paper on the paper support between a minimum and a maximum pull-track threshold.

In situations where a high volume of documents are printed, the filling of a typical printer paper tray can be onerous, and in situations where controlled paper, such as watermarked or otherwise stamped paper is used, frequent refilling can present security concerns. Such issues often arise in printer kiosk situations, such as may be present on a school campus or the like.
Furthermore, in situations where typical low volume paper trays are used for high volume printing, maintenance issues may arise. For example, paper jams due to misfeeds are more common when paper levels are low. Also, damage to paper tray components, such as the tray's paper sensor flag may be more prevalent if the paper tray is repeatedly refilled, or filled to above capacity, due to frequent exhaustion of the paper supply.


An apparatus includes a fluid reservoir and a laminate fluidic circuit positioned above the fluid reservoir. The laminate fluidic circuit includes two or more layers laminated together to define a substantially planar substrate and one or more channels defined within the substrate. The laminate fluidic circuit includes a flexible conduit defined by a portion of the substrate encompassing an extent of at least one of the channels that is partially separated or separable from the remainder of the substrate. The flexible conduit is deflectable with respect to the planar substrate toward the fluid reservoir such that the flexible conduit fluidly connects the at least one channel to the fluid reservoir.

Various assay protocols for clinical and molecular processes are implemented by installing cartridges holding various types of fluids into a processing instrument (e.g., sequencer), where the various types of fluids are selectively delivered to a fluidic device to conduct one or more fluid operations, such as mixing, processing, reaction, detection, etc. Typically, the cartridges include various fluidic elements, such as pumps, channels, manifolds, and valves, to allow the processing instrument to meter out and deliver a selected fluid to the fluidic device. To provide the cartridge all the necessary fluidic elements, some cartridges are formed out of an injected molded plastic body, in which grooves are formed along the surface of the plastic body and sealed by a plastic film or a foil that is applied over the surface of the plastic body to form fluid channels within the cartridge. However, forming the cartridge out of a rigid plastic body, such as an injected molded plastic, can result in a longer development cycle.

Laminate fluidic circuit for a fluid cartridge


A master-slave flip-flop circuit is made up of a master part which holds a data signal responsive to a clock signal and outputs the held data signal in the form of complementary output signals, and a slave part which holds the complementary output signals responsive to the clock signal and outputs at least one of the held complementary output signals. The complementary output signals of the master part have a logic amplitude which is smaller than a logic amplitude of the output signal of the slave part to ensure correct operation even when the data signal and the clock signal have high frequencies.

The present invention generally relates to master-slave flip-flop circuits, and more particularly to a master-slave flip-flop circuit made up of a master part and a slave part.
Conventionally, there exists a master-slave flip-flop circuit which is made up of a master part provided in a first stage and a slave part provided in a latter stage and uses a single phase clock signal by inverting it. Because no clock skew occurs in this flip-flop circuit, no racing phenomenon will occur even when such flip-flop circuits are connected in a plurality of stages. Hence, such flip-flop circuits are often used in a semiconductor integrated circuit.
Recently, with an increase of operation speeds of systems, there are demands for a master-slave flip-flop circuit capable of carrying out a high-speed operation.
FIG. 1 generally shows a conventional master-slave flip-flop circuit. A data signal Din shown in FIG. 2(A) is applied to a terminal 10 and is supplied to a data input terminal D of a master part 11. A clock signal CK shown in FIG. 2(B) is applied to a terminal 12 and is supplied to a clock input terminal C of the master part 11 and to a clock input terminal C of a slave part 13.
The master part 11 enters the data signal Din when the level of the clock signal CK falls to a low level and outputs from an output terminal Q a data signal shown in FIG. 2(C) after a time tpd1 from the fall in the clock signal CK. A data signal which is inverted is output from an output terminal Q of the master part 11. The time tpd1 is a propagation delay time of the master part 11.
The slave part 13 enters the output signals from the output terminals Q and Q of the master part 11 when the level of the clock signal CK rises to a high level and outputs from an output terminal X a data signal shown in FIG. 2(D) after a time tpd2 from the rise in the clock signal. A data signal which is inverted is output from an output terminal X of the slave part 13. The time tpd2 is a propagation delay time of the slave part 13. The output signals of the slave part 13 from the terminals X and X are respectively obtained through output terminals 14 and 15.
In a gate array system semiconductor device, the master part 11 and the slave part 13 are constituted by identical basic cells. Generally, a logic amplitude which is a potential difference between a voltage which describes a value "0" and a voltage which describes a value "1" is set to the same value for the master part 11 and the slave part 13. In addition, the logic amplitude must be set to a sufficiently large value so as to take into account a noise margin of a circuit which is provided in a stage subsequent to the master-slave flip-flop circuit.
However, the times tpd1 and tpd2 become large when the logic amplitude is large and the operation speed of the master-slave flip-flop circuit becomes slow. For this reason, when the data signal Din and the clock signal CK respectively shown in FIGS. 2(E) and 2(F) have high frequencies and a low-level period of the clock signal CK is shorter than the time tpd1, the clock signal CK rises to the high level before the data signal D1 which is sampled by the master part 11 is transmitted to the slave part 13. In this case, the slave part 13 samples the data signal D0 again as may be seen from FIGS. 2(G) and 2(H), thereby resulting in an erroneous operation of the master-slave flip-flop circuit.
On the other hand, the master-slave flip-flop circuit is used in various digital circuits and is used in a form of an integrated circuit to build a system, and there is a need to set and reset signals within the master-slave flip-flop circuit. The signals within the master-slave flip-flop circuit are set and reset when initializing the master-slave flip-flop circuit after building the system or set and reset with an arbitrary timing. Hence, the master-slave flip-flop circuit used in such a system is provided with set and reset functions.
FIG. 3 shows an example of a conventional master-slave flip-flop circuit employing series gate type emitter coupled logic (ECL) circuits and having set and reset functions. The series gate type circuit refers to a circuit in which differential transistor pairs are connected in series in a plurality of stages between voltage sources V.sub.EE and GND.
In FIG. 3, the master-slave flip-flop circuit is made up of a master circuit MST and a slave circuit SLV. The master circuit MST is arranged at an input stage of the master-slave flip-flop circuit and temporarily latches an input logic signal. The master circuit MST also transmits the input logic signal to the slave circuit SLV which is arranged at an output stage so as to output signals through output terminals X and X of the slave circuit SLV. In FIG. 3, Vref1 and Vref2 denote reference voltage signals.
Voltage levels at various parts of the master circuit MST are set so that the master circuit MST operates responsive small amplitude logic signals and carries out a high-speed operation. For example, the small amplitude logic signals indicate a high level when the voltage is -0.9 V and indicate a low level when the voltage is -1.8 V.
Next, a description will be given of a latch operation of the master-slave flip-flop circuit. When the clock signal CK applied to the terminal 12 has a low level and the data signal Din is applied to a base of a transistor T4 through the terminal 10, the transistor T4 turns ON when the logic level of the data signal Din is high and the signal level of the data signal Din is higher than that of the reference voltage signal Vref1. As a result, a current path is formed from the voltage source GND, a level shift resistor r1, a voltage dividing resistor r2, the transistor T4, a transistor T10, a transistor T12, and the voltage source V.sub.EE. The voltage dividing resistor r2 determines the signal amplitude of the circuit.
In this state, a signal level at a node N1 which connects the voltage dividing resistor r2 and a collector of the transistor T4 is low. On the other hand, a signal level at a node N2 which connects a voltage dividing resistor r3 and a collector of a transistor T5 is high. Accordingly, an output transistor T15 transmits a high level, a signal level at a base of a latch transistor T9 becomes high, and the latch transistor T9 turns ON. When the clock signal CK undergoes a transition to a high level in this state, a transistor T11 turns ON. As a result, a current path is formed from the voltage source GND, the level shift resistor r1, the voltage dividing resistor r2, the latch transistor T9, the transistor T11, the transistor T12, and the voltage source V.sub.EE. By the formation of this current path, the high level of the data signal Din is latched and this high level is held thereafter regardless of the existence of the data signal Din.
Next, a description will be given of the reset operation of the master-slave flip-flop circuit. When resetting the high level signal which is held as described above, a high-level reset signal S.sub.R is applied to a terminal 17. Transistors T7 and T11 are forcibly turned ON responsive to the high-level reset signal S.sub.R. As a result, a current path is formed from the voltage source GND, the level shift resistor r1, the voltage dividing resistor r3, the transistor T7, the transistor T11, the transistor T12, and the voltage source V.sub.EE. Thus, the latched high-level signal, that is, the logic level at the node N2 between the voltage dividing resistor r3 and the transistor T5, is inverted from the high level to the low level. Consequently, the output transistor T15 transmits a low level, and the transistor T9 turns OFF. On the other hand, an output transistor T14 transmits a high level, and a transistor T6 turns ON to maintain the reset state. The reset operation is completed in this manner.
Therefore, in order to reset the master-slave flip-flop circuit, a voltage V.sub.H of the reset signal S.sub.R, that is, a base voltage of the transistor T7, must be set higher than a base voltage of the latch transistor T9. The reset voltage V.sub.H must thus satisfy the following relationship (1), where r1 denotes a resistance of the level shift resistor r1, I.sub.CS denotes a current source current, V.sub.BE(T15) denotes a base-emitter voltage of the output transistor T15, I.sub.1 denotes a current flowing through the output transistor T15, and r5 denotes a resistance of an adjusting resistor r5. EQU V.sub.H >-(r1.I.sub.CS +V.sub.BE(T15) +I.sub.1.r5) (1)
As may be seen from the relationship (1), an emitter voltage of the output transistor T15 needs to be set lower than the reset voltage V.sub.H in order to set the base voltage of the transistor T9 to a low value, and this may be achieved by adding a voltage drop Vr5 of an adjusting resistor r5 to a voltage drop Vr1 (=r1.I.sub.CS) of the level shift resistor r1 and the base-emitter voltage V.sub.BE(T15) of the output transistor T15. Hence, the voltage adjustment can be made depending on a resistance of the adjusting resistor r4.
FIG. 4 shows a relationship of the high and low levels of the reset signal S.sub.R and the high and low levels at Q-output and Q-output terminals.
A set operation can be carried out similarly to the reset operation in response to a set signal S.sub.S which is applied to a terminal 18, and a description thereof will be omitted.
As described before, the master-slave flip-flop circuit shown in FIG. 3 is designed to carry out a high-speed operation responsive to small amplitude logic signals. However, the problem of this master-slave flip-flop circuit is that the high-speed operation is restricted by the provision of the adjusting resistor r4 at the output stage of the circuit. In other words, a delay is introduced to the rise and fall of the signal by the adjusting resistor r5 (or r4) which is connected in series to an emitter of the output transistor T15 (or T14). But when this adjusting resistor r5 (or r4) is omitted, there is a problem in that the set and reset operations of the master-slave flip-flop circuit can no longer be carried out satisfactorily.


A mounting assembly for mud flaps has an elongated mounting arm defining an interior elongated chamber with a slot opening at the bottom. The assembly includes a one or more biased clips that attach to the top edge of the mud flap, which is inserted into the chamber with the lower portion of the mud flap extending through the bottom slot and the clips seated within the chamber. The clips include a pair of protrusions that engage the interior of the chamber, and are configured such that sufficient downward force on the mud flap causes the clip to open and release the mud flap.

1. Field of the Invention
This invention relates to an assembly for securing mud flaps to vehicles.
2. Description of Problem
Many commercial trucks, tractors, and trailers are equipped with mud flaps to mitigate the spray from wet roads, and to reduce the ejection of stones and road debris. The mud flaps are generally mounted behind the tires, measure about 24 inches wide, and extend to approximately 5 inches above the road. Many States in the U.S. have laws that require mud flaps or other devices, and equipment citations for improper or worn mud flaps are issued. There is also an increased liability risk for a vehicle travelling with a missing mud flap if stones or debris damage another vehicle.
The mud flaps are generally secured in close proximity to the wheels of a vehicle. It is relatively common for a mud flap to become trapped between the wheels of a vehicle and a curb or other ground structure when the vehicle is traveling in reverse. This can result in a bent or broken mud flap mounting arm, a torn mud flap, or other equipment damage, as well as a vehicle with no mud flap.
Drivers frequently do not carry replacement mud flaps, or the tools necessary to replace them. Therefore, a service call may be necessary to replace a missing mud flap, which is not only expensive but also delays the vehicle. Alternatively, the vehicle may travel to a repair facility. A repair facility charges for its services, delays the vehicle while the repairs are made, and may require the vehicle to travel out of its planned route.
Delays for many delivery vehicles will reduce profits. Delivery delays may be reduced by using a releasable mud flap mounting system that secures the mud flap to the vehicle during normal use, but releases the mud flap without causing damage if the mud flap becomes caught between the wheels and an object on the ground. The driver can then simply re-connect the mud flap, or replace the mud flap with a spare, and continue with the delivery.


Techniques for managing battery power of a mobile device are described. In an aspect, battery power may be reserved for an application prior to execution of the application on the mobile device. The reservation may ensure that the application has sufficient battery power for execution. In another aspect, battery power may be allocated to applications based on their priorities. The applications may be ordered based on their priorities, and the available battery power for the mobile device may be allocated to one application at a time, starting with the highest priority application. In yet another aspect, battery power may be allocated to applications based on a battery discharge curve for the mobile device. An operating point on the battery discharge curve may be selected based on at least one objective. The available battery power may be determined based on the selected operating point and allocated to the applications.

Field
The present disclosure relates generally to electronics, and more specifically to techniques for managing a mobile device.
Background
Mobile devices have become an increasingly important part of everyday life for consumers. These mobile devices include cellular phones, personal digital assistants (PDAs), laptops, netbooks, etc. Computing power, data rate, and storage capability of mobile devices have grown tremendously in the past several decades and are expected to continue to grow at a rapid pace. As a result, mobile devices can presently support a number of services in addition to voice calls. For example, a smart phone may allow a user to make phone calls, browse the web, watch videos, listen to music, send instant messages, manage bank accounts, make stock trades, etc.
New services and applications are continually being offered to further enhance the usefulness of mobile devices. For example, a number of companies have been developing services and technologies to integrate cellular phones with biophysical and medical sensors to allow a user to manage his/her health and wellness conditions using a cellular phone. Furthermore, a number of network operators offer services to allow users to dynamically download applications to mobile devices, thereby further expanding the capabilities of the mobile devices.
Many services and applications available for mobile devices require processing power, multimedia processing and rendering, network connectivity, and/or personal area network support such as Zigbees and Bluetooth. These various activities typically increase power consumption of mobile devices. However, mobile devices normally operate on internal batteries and have limited battery power Improvements in battery capacity have not matched improvements in processing power and bandwidth of mobile devices as well as an explosion of services and applications for mobile devices. Consequently, battery life of mobile devices is often a major limiting factor and a main source of complaints from users.

Battery power management for a mobile device


This invention relates to a foamable hair care composition comprising an anionic surfactant, a co-surfactant, a viscosity reducing agent, and a cationic polymer having a weight average molecular weight of less than about 1,000,000 g/mol. The hair care composition may further comprise a silicone, wherein the silicone particle size is less than about 10 microns. The hair care composition has a viscosity of from about 1 to about 3,000 cps.

Described herein is a hair care composition that enables new product opportunities and consumer benefits by addressing the current disadvantages associated with hair care compositions. It has been found that stable concentrated and low viscosity hair care compositions can be delivered to the hair in various forms including a foamed form. Delivery of cleansing composition in the form of foam represents an attractive consumer concept. The low density of the foam necessitates a high surfactant composition in order for the consumer to receive the appropriate level of cleansing in a realistic product volume in one dose. However, typically, high surfactant liquid cleansing composition exhibit high viscosity, which makes it difficult to deliver via a pump foam dispenser, a squeeze foam dispenser or an aerosol foam dispenser. Therefore, delivery as a foam is facilitated by low viscosity compositions that contain a high concentration of cleansing surfactants.
Hair care compositions comprising (a) above about 20% total surfactants, wherein the surfactants comprises of (i) anionic surfactants (ii) amphoteric and/or zwitterionic surfactants, (iii) optionally nonionic surfactants; and (b) viscosity reducing agents provide stable compositions having viscosity below about 3000 centipoise. Viscosity reducing agents can include: Class A materials, Class B materials, water miscible glycols and mixtures thereof. The surfactants comprise an average weight % of alkyl branching of above about 0.5.
In order to deliver consumer acceptable wet conditioning feel, the hair care composition also comprises a cationic polymer. The hair care composition is able to deliver low viscosity concentrated liquid cleansing compositions even in the presence of cationic polymers which typically raise liquid viscosity. Cationic polymers suitable for use include those having a weight average molecular weight less than about 1,000,000 g/mol.
Additionally, the hair care composition may further comprise one of more benefit agent including, but not limited to, silicone materials to enhance the consumer desirable wet and dry conditioning feel. Suitable silicone materials include those silicone emulsions having a particle size of less than about 10 micrometers. Silicones less suitable for use include non-emulsified silicones and/or large particle silicone emulsions which may result in a phase unstable composition.


Disclosed herein are techniques, systems, and methods relating maintaining a time base between receiving and transmitting assemblies during interruption of data streams communicated therebetween.

In modern mobile communication systems different mobile radio standards like Universal Mobile Telecommunications System (UMTS), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile communication (GSM), and enhanced data rates for GSM evolution (EDGE) are used. Thereby the GSM standard is often referenced as second generation standard (2G), EDGE is referenced as a standard of generation 2.5 (2.5G) and UMTS is referenced as a third generation standard (3G).
Respective radio frequency (RF) signals are received and processed in a radio frequency unit which may be used for down converting the radio frequency signals to base band (BB) signals. Such radio frequency units are in many cases implemented in an integrated circuit. The data received by the radio frequency unit from an antenna are converted to digital signals which are transmitted to a base band unit for further processing. A function of the radio frequency unit can be controlled by the base band unit. It is furthermore possible that an interface between the radio frequency unit and the base band unit is realized as a interface. Such an interface is not restricted to transmit received (RX) data from a radio frequency unit to a base band unit but also to transmit data to be transmitted (TX) via a radio frequency unit between the base band unit and the radio frequency unit.
Respective base band units and radio frequency units can be able to operate within the GSM/EDGE standard or the UMTS standard or both the GSM/EDGE and the UMTS standard. In other words, various combinations of 2.5G mobile radio standards and 3G mobile communication standards are possible. A GSM/EDGE standard is also referenced as an enhanced general packet radio service (EGPRS).
When transmitting data over the interface between the radio frequency unit and the base band unit, it is possible that a time base for the transmitted data is defined and adhered to.

Time-based maintenance via a packet-oriented digital interface in radio-frequency transmitting and receiving assemblies


An extraction device includes a first housing, a second housing slidable received in the first housing for receiving a memory card, an engaging member, a processor, communicating pins, an identifying pin, an elastic member and a popping delay member. The engaging member engages with the second housing or disengages from the second housing. The communicating pins and the identifying pin respectively connect with communicating pin connecting portions and an identifying pin connecting portion in the second housing. The elastic member drives the second housing away from the first housing when the engaging member is disengaged from the second housing. The popping delay member delays the second housing from popping out of the first housing when the identifying pin disconnects from the identifying pin connecting portion. The processor executes a program when the identifying pin and the identifying pin connecting portion are disconnected.

1. Technical Field
The present disclosure relates to extraction devices, and especially to an extraction device employed in an electronic device for receiving and extracting a memory card.
2. Description of Related Art
Many electronic devices, such as mobile phones, electronic readers, and computers, include a space to plug in a memory card. When a user wants to take out the memory card, a program is executed to save data in the memory card. However, the program must be started by the user. If the user forgets to start the program before taking out the memory card, the data in the memory card may be damaged.

HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.