An article having a main sheath portion formed of a flexible and/or elastic material closed at a distal end thereof and open at a proximal end thereof, with a first flange element formed of a flexible and elastic material, and having an aperture formed or pressure-formable therein, secured to the open proximal end of the sheath. In a single flange embodiment, the main sheath portion may be provided in a center-compacted configuration, for bidirectional application of the sheath. In a multi-flange embodiment, a second flange element is secured at an outer portion thereof to the first flange element and has an aperture formed or pressure-formable therein, in substantial alignment with the aperture of the first flange element, whereby the sheath is extended or extensible from a compacted state through the aperture in either the first or the second flange element. In a specific embodiment, the article comprises a condom which may be donned in either of two directions. Such bidirectionally donnable condom article is characterized by ease of use and improved safety and reliability, as compared to prior art condoms.

1. Field of the Invention
The present invention generally relates to flanged, generally tubular articles, including bidirectionally donnable multiple flange condom articles, and to method and apparatus for making and using such articles.
2. Description of the Related Art
In recent years, there has been a significant increase in the incidence and spread of sexually transmitted diseases, and this phenomenon has in turn caused an increased use of condoms as a prophylactic measure to reduce the risk of infection and transmission of such diseases.
Among the reasons for the increase in incidence and rate of transmission of sexually transmitted diseases (STDs) are the development of increasingly antibiotic-resistant strains of disease-causing organisms, e.g., those responsible for diseases such as syphilis and gonorrhea. Another factor has been the absence of any effective cure for acquired immunodeficiency syndrome (AIDS).
Against the foregoing background, and the recognition that condoms afford a safe, low cost, and generally reliable means for combatting the spread of STDs including AIDS, there has been an increased demand for condoms.
Currently, most condoms are produced from a latex resin via a dipping process in which a cylindrical and rounded-end mold is dipped into a resin bath, so that the mold is coated with a thin layer of the latex material. The thickness of the latex coating on the mold is dependent on the viscosity of the latex, and the speed of extracting the mold from the latex bath. Similar latex dipping processes have been employed with suitably shaped molds to form tight-fitting gloves such as surgical gloves.
The above-described latex dipping process has been utilized for decades, and yields a generally satisfactory barrier product at reasonable cost.
With the recent spread of AIDS in the general population and the resurgence of condom usage in sexual activities, there has been interest in improving the strength and reliability characteristics of condoms, and of achieving improvements in manufacturing processes and economics, to further combat the spread of STDs generally, and AIDS specifically, as well as to provide a safe, reliable, and convenient contraceptive means. In this respect, there is a continuing need to provide condoms in a readily packaged form. The packaging itself should ensure the physical integrity, safety, and effectiveness of the condom are maintained. The package and the condom should be designed in a manner facilitating ready removal and use of the condom, in order to enhance the appeal of using condoms in coital activity.
U.S. Pat. No. 4,576,156, issued Mar. 18, 1986 to Manfred F. Dyke, discloses a condom formed of a thermoplastic polyurethane material, having a generally cylindrical configuration with an open proximal end and a closed distal end. The disclosed condom has a thickness of from about 0.01 millimeters, or less, to about 0.25 millimeters. The thermoplastic polyurethane employed to form the condom is disclosed as having: an average Shore A hardness of from about 50 to about 90; a tensile stress, at 100% of elongation, between about 300 and 1,000 psi; and a tensile stress, at 300% elongation, between about 800 and 3,000 psi. Suitable thermoplastic polyurethane species for manufacturing the condom include those set out at column 2, line 55 to column 3, line 10 of the Dyke patent, with polyether- or polyester-based urethane elastomer said to be preferred. In the manufacture of the thermoplastic polyurethane condom disclosed in the Dyke patent, a film of the polyurethane material, e.g., in the form of a 6-inch square, is heated to a temperature high enough to soften the polymer but low enough to avoid chemical degradation, preferably in a clamping frame, and at a temperature of about 400.degree.-500.degree. F. The heated film then is brought into contact with a preformed mandril to cause the film to assume the shape of the mandril, preferably with application of a vacuum to the system in order to bring about uniformity in wall thickness (column 3, lines 47-50 of the patent).
European patent application 0 147 072, published Jul. 3, 1985, in the names of Robert A. Taller, et al, discloses a process for making a polyurethane condom with a uniform thickness of from about 1.5 to about 4 mils. A heat-curable polyurethane prepolymer solution is employed into which a mold is dipped and withdrawn for heat curing on the mold. The polyurethane prepolymer which is employed in the dipping medium is the reaction product of a polyisocyanate and with at least one long chain polyol. The polyol is amorphous at room temperature, has an average molecular weight of from about 500 to about 5,000, and a hydroxyl number of from 225 to about 22.4. The polyurethane prepolymer has a NCO/OH ratio of from about 0.95:1 to about 1.1:1.
U.S. Pat. No. 4,009,717 to C. H. Allen discloses a condom comprising inner and outer sheaths, with the inner-sheath volume providing a fluid reservoir so that the interior of the inner sheath remains dry. The outer sheath is closed at one end and open at the other. The inner sheath is open at both ends inside the outer sheath, with means between the inner and outer sheath establishing a fluid-tight seal to form the fluid reservoir therebetween.
U.S. Pat. No. 4,955,392 to R. Sorokin discloses a condom formed of elastomeric film material and including a tubular length having a closed distal end and a proximal open end with an integral pubic shield about the proximal open end.
U.S. Pat. No. 4,232,675 to E. N. Meldahl discloses a modified condom of shorter length than conventionally employed, interiorly containing a spermicidal ring and a penis-supported harness assembly.
Various condom designs have evolved which feature a double-walled chamber at the distal end of the condom containing contraceptive or medicant material. Examples include U.S. Pat. No. 4,332,243 to M. Gutnick; U.S. Pat. No. 2,410,460 to J. P. Robinson; U.S. Pat. No. 4,446,860 to M. Gutnick; and U.S. Pat. No. 2,577,345 to F. L. McEwen.
West German Offenlegungsschrift 2020280 discloses a condom comprising two sheaths inserted in each other, the inner sheath having an opening through which semen can discharge and be fastened in place by two rubber rings.
U.S. Pat. No. 2,433,538 to H. W. Warner discloses a semen receptacle article having a removable container therein. The container has a distal receiver opening and contains absorbent material for receiving and absorbing a sperm specimen. It appears from the description that the receptacle member is placed on the male organ with the distal end of the penis in the vicinity of the proximal wall of the sperm container, but not inserted through the sperm container opening.
U.S. Pat. No. 2,586,674 to F. Lonne describes a prophylactic construction (see FIG. 3 of the patent, and appertaining description at column 2, lines 26-36) wherein a double-layer condom comprises an inner pellicle having annular projections or extensions transverse to the longitudinal dimension of the prophylactic.
U.S. Pat. No. Design 253,009 to T. Okamoto shows a prophylactic device whose frontal (distal) section comprises a pair of indented surface portions forming circumferential grooves in the prophylactic, transverse to the longitudinal axis thereof.
U.S. Pat. No. 3,295,145, to R. E. Erickson describes a urine collector for infants, comprising front and rear panels sealed to one another to form a throat dividing the collector into upper and lower compartments. The back panel of the collector features an oval aperture surrounded by a pressure-sensitive adhesive for adhering the collector to the infant's skin. The collector panels preferably are formed of a substantially transparent thermoplastic film such as polyethylene, vinyl copolymers and the like, at a thickness of from about 0.5 to 3 mils.
U.S. Pat. No. 4,022,213, to D. Stein discloses a male drip urinal comprising a tubular sleeve including a thin rubber sheath which is stretched over the penis for sealing purposes. An apertured resilient sheet extends across the mouth of the urinal sleeve for sealing about the base of the penis, to provide a backup seal should the inner sheath tear. The sheet is carried by an annular ring forming the mouth of the urinal sleeve.
U.S. Pat. No. 2,448,938, to A. Wayne describes a sanitary protective appliance which may be configured with a shield-like body portion of slightly convex shape in side elevation view, with an accordion-like finger portion which is foldable back against the convex face of the body portion. The finger portion is convergingly shaped from its proximal to its distal end portions. The body portion of this device contains a generally central opening forming a passage into the finger portion and comprises an integral tab to facilitate removal of the appliance after use. The rear (proximal) face of the body portion is peripherally coated with an adhesive coating material, except for the tab. The adhesive coating is overlaid with a gauze cover which is removable to affix the appliance, for covering or protecting a body appendage.
U.S. Pat. No. 4,735,621, to L. Hessel discloses a tubular protective condom-like device comprising a flexible, thin-walled tube closed at one end and having its opposite open end a collar-shaped, outwardly extending portion with means for radially stretching the collar or open end. In one disclosed embodiment, the device has a first outwardly extending ring-shaped means adapted for radially extending the open end, and a second outwardly extending ring-shaped means adapted for radially extending the open end, and a second outwardly extending ring-shaped means that is adapted for radially extending the closed end. The second ring-shape means thus secures or maintains the device in the vagina in a manner similar to a diaphragm.
U.S. Pat. No. 4,964,416 to Robert G. Wheeler discloses a condom having a main sheath portion closed at a distal end and open at a proximal end thereof, which may be constructed from thermoplastic elastomeric materials. The condom also has an annular-shaped sealing element, formed of an elastic material, circumscribing an interior opening of smaller size than the proximal end opening of the condom, and joined at the outer periphery of the sealing element to the main sheath, at or in the vicinity of the proximal end opening. Such construction thereby provides a barrier member in the proximal segment of the condom to enhance its effectiveness as a contraceptive and to minimize the incidence of sexually transmitted diseases.
U.S. Pat. No. 4,834,113 to A. V. K. Reddy discloses a prophylactic device to be worn by a recipient coital party, which utilizes a rolled-up pouch portion as a body cavity entry guide. As such the device can only be oriented upon the wearer's body in one direction for proper use.
U.S. Pat. No. 4,415,548 to A. V. K. Reddy discloses a spermicidally-active lubricated prophylactic, having a spermicidally active lubricant on both sides of the condom.
There are, however, several deficiencies which still need to be addressed and which would provide a major improvement in condom articles. These include: air entrapment caused by donning an unfurled (i.e., non-rolled, such as a natural skin) condom: the friction or "drag" associated with donning an unfurled condom; acceptable, comfortable aperture size; the necessity of having the correct side of previously rolled or slip-on condoms contact the penis, in order for donning to be successful; and the need for greater ease of handling the condom while donning.
In respect of the "correct side" deficiency noted above, this characteristic is particularly applicable to rolled condoms which are "rolled up" along the entire length of the sheath to yield a fully rolled product of generally flat configuration in which the distal end portion of the sheath is surrounded by a toroidal ring constituted by the rolled sheath material. When such rolled condom is removed from its package, particularly in a low-light or dark environment, it frequently occurs that the condom is applied to the tip of the glans in a "wrong facing" orientation, such that it is not able to be unrolled on the penis by manually urging the roll downwardly over the shaft of the penis. The user, upon discerning such wrong orientation, then flips the rolled condom over and properly applies it to the penis, but in such process, the surface of the condom film initially contacting the glans is externally exposed on the condom as finally installed. This may result in transmission of sexually transmittable disease and/or sperm to the recipient coital partner, whereby the contraceptive and disease-protective functions of the condom are compromised.
Even in a fully illuminated environment, inexperienced condom users frequently initially position rolled condoms on the penis in a "wrong side up" orientation.
Accordingly, it is an object of the present invention to provide improved flanged tubular articles, e.g., condoms, which are readily, simply, and inexpensively formed.
It is another object of the present invention to provide improved condom articles which substantially eliminate air entrapment, reduce friction associated with donning of the condom article, eliminate the "one right side" feature of previous condoms, and provide simpler handling and greater ease of use, as compared to conventional condoms.
A further object of the present invention is to provide an acceptable, comfortable aperture size in the condom article, which is absent in prior art flanged condom articles.
It is another object of the invention to provide apparatus and methods for making and using condoms of the aforementioned type.
Other objects and advantages of the present invention will be more fully apparent from the ensuing disclosure and appended claims.

Bidirectionally donnable generally tubular sheath articles, and apparatus and method for making and using same

by Helen J. Wheeler, legal representative


Introducing multiple redox reactions with a suitable voltage range can improve the energy density of redox flow battery (RFB) systems. One example includes RFB systems utilizing multiple redox pairs in the positive half cell, the negative half cell, or in both. Such RFB systems can have a negative electrolyte, a positive electrolyte, and a membrane between the negative electrolyte and the positive electrolyte, in which at least two electrochemically active elements exist in the negative electrolyte, the positive electrolyte, or both.

A redox flow battery (RFB) stores electrical energy in reduced and oxidized species dissolved in two separate electrolyte solutions. The negative electrolyte and the positive electrolyte circulate through two cell electrodes separated by an ion conducting membrane or separator. Redox flow batteries are advantageous for energy storage because they are capable of tolerating fluctuating power supplies, repetitive charge/discharge cycles at maximum rates, overcharging, overdischarging, and because cycling can be initiated at any state of charge.
However, among the many redox couples upon which redox flow batteries are based, a number of disadvantages exist. For example, many systems utilize redox species that are unstable, are highly oxidative, are difficult to reduce or oxidize, precipitate out of solution, and/or generate volatile gases. One of the main challenges confronting RFB systems is the intrinsically low energy density compared with other reversible energy storage systems such as lithium-ion batteries. With the voltage limitation of the aqueous systems, this issue is typically tackled by increasing the active species concentration in the electrolyte. However, the active species concentration is limited by the solubility and the stability of the active redox ions in the electrolyte solutions. Therefore, a need exists for RFB systems having a greater energy density.

This patent is subject to a terminal disclaimer.

Redox flow batteries having multiple electroactive elements


A mold clamping device includes a fixed platen on which a fixed mold is disposed, a movable platen on which a movable mold that defines a cavity along with the fixed mold is disposed, a tie bar configured to resist a mold clamping force that is generated between the fixed platen and the movable platen, and a half nut opening and closing device configured to grip the tie bar, thereby locking the movable platen and the tie bar, in which the half nut opening and closing device includes half nuts configured to grip the tie bars, an actuator which is disposed on the movable platen and configured to move the half nuts back and forth with respect to the tie bars, and a clevis configured to connect the actuator to the half nuts so as to allow the actuator to swing with respect to the gripping member.

As is well known, in molding machines such as an injection molding machine, there is a molding machine having a configuration in which a mold clamping force during molding (for example, injection molding) generated between a fixed platen on which a fixed mold is disposed and a movable platen on which a movable mold is disposed is retained by a tensile force of a tie bar.
In the molding machine having such a configuration, a mold clamping device having a configuration in which when the movable platen and the fixed platen are in a mold clamping state, a locking-shaped portion formed in the tie bar is gripped by a half nut or the like, thereby making the movable platen be retained on the fixed platen, is widely known (refer to, for example, PTL 1).
Further, in the molding machine having such a configuration, there is also a method of performing mold opening (hereinafter, referred to as mold release) by moving the tie bar in a direction in which the movable platen is opened, by driving the movable platen through the half nut by the tie bar in a state where the locking-shaped portion formed in the tie bar remains gripped by the half nut or the like, because a large mold opening force is required at the time of a mold opening operation to separate the fixed mold and the movable mold from a mold clamping state when extracting a molded article after resin is filled into a mold.
In this manner, in the mold clamping device to grip the tie bar by the half nut or the like, for example, as shown in FIG. 14, a connection mechanism 123 is used in which a flange 124 provided at a half nut 121 is pressed by a knuckle 125 of a tip portion of a rod 122 of an actuator (for example, a hydraulic cylinder), thereby fixing the actuator to the half nut. In this case, in order to fix the rod 122 to the half nut 121 without rattle, usually, connection is performed by the knuckle 125 and the flange 124 with a clearance 126 provided.

Mold clamping device and injection molding machine

MITSUBISHI HEAVY INDUSTRIES PLASTIC TECHNOLOGY CO., LTD.


The present invention is an improvement to a method of producing crude argon directly from the cold box of a cryogenic air separation unit. The improvement is the production of crude argon containing greatly decreased concentrations of oxygen, i.e. <0.5% oxygen without any loss in recovery. The improvement is accomplished by using an effective number of theoretical stages in the side arm column so as to produce the desired argon product purity without sacrificing argon recovery; feeding crude liquid oxygen from the bottom of the high pressure column to the reboiler condenser located in the top of the argon side arm column at a rate in the range from about 1.04 to about 1.36 times the theoretical minimum flow of crude liquid oxygen necessary to completely vaporize that minimum flow of crude liquid oxygen to its dew point; and effectuating the intimate contact between the vapor and liquid phases in the argon side arm column by a combination of conventional sieve trays and low pressure drop, structured packings so that the pressure drop across this combination results in a pressure at the top of the argon side arm column such that the flow of crude liquid oxygen to the reboiler/condenser located in the top of the side arm column can be maintained in the appropriate range. Furthermore, the improvement is accomplished without an energy penalty in the cryogenic air separation unit.

Argon is recoverable from sources such as air and NH.sub.3 purge gas. Most argon is produced as a crude product from cryogenic air separation units because it is comparatively economical. However, the typical concentration of oxygen in crude argon produced by cryogenic air separation unit is 2-5%, whereas most of the argon uses require nearly oxygen-free argon. This leads to expensive downstream processing of crude argon to reduce its oxygen content. It is desirable to directly produce an argon stream from a cryogenic air separation unit in high recoveries with decreased oxygen content so that either it could be directly used by the users or minimize the processing required to further purify it.
Historically, most of the cryogenic air separation unit use a double distillation column of Linde-type with an argon sidearm column to recover argon from air, as disclosed in Latimer, R. E., "Distillation of Ar", Chemical Engineering Progress, 63 (2), 35-59 [1967]. FIG. 1 shows such a scheme. A carbon dioxide and water free compressed air stream is cooled and fed to a high pressure distillation column. This distillation column produces two liquid streams. The liquid nitrogen stream provides reflux for the top of the low pressure distillation column. The crude liquid oxygen stream from the bottom of the column is split into two fractions. One fraction is fed to the low pressure column as intermediate reflux. The other fraction is vaporized in the overhead reboiler/condenser of argon sidearm column and is fed to the low pressure column a few trays below where the crude liquid oxygen is fed in. The low pressure column produces gaseous nitrogen product, oxygen product and a waste nitrogen stream. An argon-rich (7-12% argon) vapor stream is withdrawn from the low pressure column, many trays below the vaporized crude oxygen feed point and is fed into the bottom of crude argon distillation column with a reboiler/condenser at the top. The nitrogen concentration of this argon-rich stream is typically very low (0.01 to 0.1% nitrogen). The vaporization of a portion of the crude oxygen liquid in the top reboiler/condenser nearly totally condenses the vapor rising to the top of the argon sidearm column, causing the condensate to flow down through the column, thereby providing the needed reflux. The argon available from the air is drawn as crude argon containing 2-5% oxygen from the top of the argon sidearm column.
Since argon is a valuable product, its recovery is often maximized by optimizing the number of theoretical stages in each section of the low pressure and argon sidearm columns and also the flowrates of various streams. The optimization of these theoretical stages goes hand-in-hand with the fact that since early 1930's sieve trays have been the trays of choice for cryogenic air separation unit. These sieve trays have certain contact efficiency and pressure drop per tray. The ratio of these parameters is the pressure drop (.DELTA.P) per theoretical stage (or equilibrium stage). The total pressure drop available for operation of the argon sidearm column limits the number of theoretical stages which can be used in it. The relative volatility of the argon with respect to oxygen (.alpha.) is about 1.5 at the bottom of argon sidearm column but is only about 1.1 at the top of this column. This low value of .alpha. at the top of the column makes it difficult to produce crude argon with low concentrations of oxygen in high recoveries.
As stated by Ruhemann, "we must consider that a high yield of argon is profitable as well as high argon concentration in the final product. Unfortunately these two conditions are irreconcilable." (see Ruhemann, M. "Separation of Gases", Second Edition, pp 223, Oxford University Press, 1949). This irreconcilable notion has plagued the cryogenic air separation industry (which uses sieve trays in its distillation columns) for quite a while; as a result, it has generally chosen a higher recovery (yield) of argon with significantly higher than desired concentrations of oxygen.
This oxygen-containing argon (crude argon) is then further purified in a catalytic reaction unit. In the first step of this purification scheme, crude argon is mixed with hydrogen and passed through a catalytic unit to react the oxygen to form water.
Recently, a process to produce a crude argon stream with lower concentrations of oxygen using sieve trays was disclosed in Soviet patent application (Belyakov V. P., et al., SU 1416820-A, 1988). In this patent application, the limitation of the total number of theoretical stages due to the total pressure drop available in the argon sidearm column is overcome by breaking this column in two zones. The first zone of this column contains enough sieve trays so that the pressure at the top is reduced to atmospheric. The gas stream from this zone upper part is warmed in a heat exchanger, compressed, cooled and fed at the bottom of the second zone of the side arm column. The oxygen enriched liquid stream from the lower part of the second zone is returned under pressure to the upper part of the first zone. An argon stream containing lower concentrations of oxygen is withdrawn from the top of the second zone. The problem with this arrangement is that it needs more capital for extra heat exchangers and a compressor. Furthermore, the use of a compressor increases the power consumption of the process.

Production of oxygen-lean argon from air


A device and method are provided for determining the wear of a sole of a shoe. The device includes first and second sensors receivable in the sole of the shoe. The sensors are axially spaced and generate signals in response to corresponding impact forces acting thereon. A control circuit is connectable to the first and second sensors. The control circuit compares the difference between the first and second signals to a threshold and generates an alert signal in response to the difference between the first and second signal meeting the threshold.

It is a fact of life that the shoes of an individual will eventually become old and wear out. For those who are not avid runners, the terms 'get old' and 'wear out' are often associated with the appearance of a particular pair of shoes. However, for the avid runner, this is not always the case. Many running injuries are caused by the continued use of improper or worn running shoes. An increase in the number of incidences of injury can be directly correlated to the degradation of the materials within the sole of a running shoe. Unfortunately, shoes that have been worn past their useful life do not always appear worn, especially if those shoes are only used for running. In fact, it is nearly impossible to tell if a shoe has been worn beyond its useful life based on appearance alone.
As is known, the average running shoe lasts between 300 and 500 miles before the soles of the shoes begin to degrade. This threshold is dependant on several factors such as the size of the person wearing them or the wearer's running style. As heretofore described, when the sole of the shoe begins to degrade, the risk for injury to the runner can increase significantly. Nevertheless, there is no mechanism for advising a runner that a shoe is worn out. Presently, the runner has two options for determining if a pair of shoes has worn out. The first option is to keep a log of the miles run in a pair of shoes and to know how many miles a pair of shoes typically lasts from past experience. The second option a runner uses to determine if a pair of shoes has worn out is the feel of the shoes. Avid runners can sometimes determine that a pair of shoes is becoming worn by feeling extra soreness in their muscles or joints after a run. It can be appreciated that there are flaws in both of these prior methods. Therefore, it is highly desirable to provide a device that can measure the wear of a shoe sole in a quantitative manner and alert a runner when a new pair of shoes is needed.
Therefore, it is a primary object and feature of the present invention to provide a device and method for measuring the wear of a sole of a shoe in a quantitative manner and for alerting a runner when a new pair of shoes is needed.
It is a further object and feature of the present invention to provide a device for measuring the wear of a sole of a shoe that may be easily incorporated into a standard running shoe.
It is a still further object and feature of the present invention to provide a device and a method for measuring the wear of a sole of a shoe that are inexpensive and simple to utilize.
In accordance with the present invention, a device is provided for determining the wear of a sole of a shoe. The device includes a first sensor that is receivable in the sole of the shoe. The first sensor generates a first signal in response to a first impact force thereon. A second sensor is also receivable in the sole of the shoe. The second sensor generates a second signal in response to a second impact force thereon. A control circuit is connectable to the first and second sensors. The control circuit generates an alert signal in response to the first and second signals.
It is contemplated for the first and second sensors to be pressure sensors and for the control circuit to include a first amplifier for amplifying the first signal and a second amplifier for amplifying the second signal. The control circuit also includes a differential amplifier for determining a difference between the first amplified signal and the second amplified signal and for amplifying the difference between the first amplified signal and the second amplified signal. In addition, the control circuit includes a comparator for comparing the amplified difference between the first amplified signal and the second amplified signal with a threshold and for generating an illumination signal if the amplified difference between the first amplified signal and the second amplified signal meets the threshold. A light emitting diode generates the alert signal in response to the illumination signal.
In accordance with a further aspect of the present invention, a device is provided for determining the wear of a sole of a shoe. The device includes a first pressure sensor receivable in the sole of the shoe. The first sensor generates a first signal that is proportional to a first impact force acting thereon. A second pressure sensor is also receivable in the sole of the shoe at a location axially spaced from the first pressure sensor. The second sensor generates a second signal that is proportional to a second impact force acting thereon. A control circuit is connectable to the first and second pressure sensors. The control circuit compares the difference between the first and second signals to a threshold and generates an alert signal in response to the difference between the first and second signal meeting the threshold.
It is contemplated for the control circuit to include a first amplifier for amplifying the first signal and a second amplifier for amplifying the second signal. The control circuit also includes a differential amplifier for determining a difference between the first amplified signal and the second amplified signal and for amplifying the difference between the first amplified signal and the second amplified signal. In addition, the control circuit includes a comparator for comparing the amplified difference between the first amplified signal and the second amplified signal with a threshold and for generating an illumination signal if the amplified difference between the first amplified signal and the second amplified signal meets the threshold. A light emitting diode generates the alert signal in response to the illumination signal.
In accordance with a still further aspect of the present invention, a method is provided for measuring the wear of a sole of a shoe. The method includes the steps measuring an impact force exerted on a first portion of the shoe and measuring an impact force exerted on a second portion of the shoe. The impact force exerted on the first portion of the shoe is compared with the impact force exerted on the second portion of the shoe. Thereafter, an alert signal is generated if the difference between the impact force exerted on the first portion of the shoe and the impact force exerted on the second portion of the shoe meets a threshold. A light emitting diode is illuminated in response to the alert signal.
The sole of the shoe includes a midsole affixed to an upper surface of an outsole. The method of the present invention may include the additional steps of positioning a first sensor between the outsole and the midsole to measure the impact force exerted on the first portion of the shoe and positioning a second sensor on an upper surface of the midsole to measure the impact force exerted on the second portion of the shoe. The first sensor and the second sensor are axially aligned.
The step of comparing the impact force exerted on the first portion of the shoe and the impact force exerted on the second portion of the shoe may include the additional steps of generating a first signal that is proportional to a first impact force and generating a second signal that is proportional to a second impact force acting thereon. Thereafter, the first and second signals are amplified. The difference between the first amplified signal and the second amplified signal is determined.
A control circuit is provided to compare the impact force exerted on the first portion of the shoe and the impact force exerted on the second portion of the shoe and to generate the alert signal. The control circuit is enclosed in a capsule which may be interconnected to the shoe.

Device and method for alerting a runner when a new pair of running shoes is needed


A micro-controller unit (MCU) selectively accesses one of an external extended memory and an internal memory in response to a signal on a read/write terminal instead of an additional terminal. The micro-controller unit includes an external memory control block, an external timing control block, and the internal memory, and additionally includes a reset detection circuit, a memory access clock generation circuit and a latch. The reset detection circuit receives an external reset signal for initializing the MCU and an external clock, and detects whether the micro-controller unit is reset. The memory access clock generation circuit receives an output signal from the reset detection circuit and generates a memory access clock signal to selectively access one of the internal memory and the external extended memory. The latch receives the external reset signal, the memory access clock signal and a memory interface signal applied to the read/write terminal for applying a memory access selection signal to the external memory control block, the external timing control block and the internal memory, whereby a memory selection is performed by the reset signal and the memory interface signal.

1. Field of the Invention
The present invention relates to a micro-controller, and more particularly to an improved micro-controller to simplify the hardware necessary for accessing an extended memory.
2. Description of the Prior Art
In order to adopt a micro-controller unit (MCU), for example, for use in a controller for a cassette or a floppy disk memory device, logic is embodied by the existence of wiring which increases the need for hardware according to the type of controller. When the controller includes an integrated processor that can program a micro program, a control according to the use may be made simply by changing the micro program and in this circumstance, a micro-controller is needed.
Furthermore, when a read only memory (ROM) used to store a predetermined amount of the micro program is constructed on the semi-conductor chip of the micro controller unit, an exclusive pin controller for the chip can be created, and it is economical for this purpose, to choose a presently available one-chip micro-controller unit having a internal ROM. In this way, a standard application is available by using the above identified floppy disk device and the one-chip micro-controller unit incorporating a micro program.
When the micro-controller unit includes an internal ROM with a given capacity, there exists hardware that can access an extended memory so as to accommodate the possibility of external extended memory. Generally, since the one-chip micro-controller unit has an extra external terminal pin, a control signal, namely, a high or low level signal, can be applied to this pin so as to select, access and control an internal ROM or an external extended memory.

Micro-controller unit for selectively accessing an internal memory or an external extended memory using a read/write terminal


A method is provided for controlling a pressure control device of a pressure-medium brake system of a vehicle which individually controls brake pressures in brake cylinders of wheels of an axle. The pressure control device includes a relay valve. In order to compensate for response sluggishness of the relay valve, shut-off valves connected between the relay valve and their respective brake cylinders are not switched into a passage position in which pressure is forwarded to the brake cylinders until a permissible pressure gradient exists between the working pressures of the relay valve and the brake pressures in the brake cylinders.

The invention relates to a method for controlling a pressure control device of a pressure-medium-type brake system of a vehicle.
A method of said type or a pressure control device of said type is known from German patent document no. DE 10 2010 010 606 A1. The known pressure control device is constructed such that, proceeding from a brake slip regulation (ABS) arrangement as a basis, said pressure control device can be easily enhanced in terms of its regulation functions merely through the addition of individual components, for example for enhancement to include drive slip regulation (ASR), driving dynamics regulation (ESP) or an electronic brake system (EBS).
The known pressure control device comprises a single relay valve, having a reservoir port which is supplied from a reservoir pressure, having a deaeration port which is connected to a pressure sink, having a control port, and having at least two working ports, wherein one working port is assigned to at least one brake cylinder of a wheel of one vehicle side of the axle, and the other working port of the single relay valve is assigned to at least one brake cylinder of a wheel of the other vehicle side of the axle. Each working port of the relay valve is connected to a 2/2 directional valve which is controlled directly or indirectly by a control unit and which is assigned to in each case one vehicle side and which, in a manner dependent on the actuation by the control unit, either produces a connection between the respective working port of the relay valve and the associated brake cylinder or shuts off said connection, and wherein the control port of the relay valve is, by way of a valve device which is formed by a 3/2 directional solenoid valve or by two 2/2 directional solenoid valves and which is controlled by way of the control unit, connectable either to a brake control pressure formed dependently on a driver braking demand, or to a pressure sink.
Thus, the known pressure control device comprises just four basic elements: the single relay valve, the valve device, which comprises only one 3/2 directional solenoid valve or two 2/2 directional solenoid valves, and the two 2/2 directional valves. By means of these valves, which are relatively easy and inexpensive to produce, it is already possible to realize wheel-specific brake slip regulation to a certain extent, that is to say for example a pressure build-up or pressure dissipation at a wheel brake cylinder of one vehicle side with simultaneous holding of a pressure in a wheel brake cylinder of the other vehicle side. An opposite pressure profile (pressure dissipation, pressure build-up) at wheels on different vehicle sides is however not possible.
In particular, only a single relay valve is used in order to realize wheel-specific control of large pressure medium cross sections in the brake cylinders inter alia by way of a central, relatively small control pressure flow. In this way, the pressure control device is, altogether, very inexpensive to produce.
In the control of the known pressure control device, however, the problem arises that, owing to the relatively inert reaction of the relay valve to pneumatic pressure control signals introduced through its control port, a situation may for example arise in which compressed air continues to flow into a brake cylinder despite the fact that a pressure dissipation is already sought there in a manner commanded, for example, by a wheel-specific brake slip regulation (ABS) arrangement. This is disadvantageous in particular with regard to a demanded fast pressure adaptation of the brake pressures in the brake cylinders in the context of a brake slip regulation (ABS) arrangement, a drive slip regulation (ASR) arrangement or a driving dynamics regulation (ESP) arrangement.
The invention is accordingly based on the object of further developing a method for the control of a pressure control device mentioned in the introduction such that said method permits faster adaptation of the brake cylinder pressures.

Method for controlling a pressure control device of a pressure-medium brake system of a vehicle

KNORR-BREMSE Systeme fuer Nutzfahrzeuge GmbH


A magnetic memory of a present invention is formed as below. The magnetic memory has a TMR film formed on a first conductive film, and a second conductive film with a flat top surface, having the same plane shape as that of the TMR film, formed on the TMR laminated film. A first insulating film having a flat top surface and the same height as the surface of the second conductive film is formed so as to surround the TMR film and the second conductive film. A third conductive film connected electrically to the second conductive film is formed on the first insulating film.

1. Field of the Invention
The present invention relates to a magnetic memory and a method of its manufacture.
2. Description of a Related Art
In FIGS. 7(A)-(E) is shown a method of a magnetic memory of a related art. First, as shown in FIG. 7(A), a first Al conductive film 104 is formed on a SiO2 insulating film 102 and patterned. Then, a tunnel magnetoresistive (TMR) film 106 is deposited on the patterned conductive film 104, and patterned.
Next, as shown in FIG. 7(B), a layer insulating film 110 is formed on the insulating film 102 so as to cover the first conductive film 104 and the TMR film 106.
Next, as shown in FIG. 7(C), a photoresist is coated on the layer insulating film 110 so as to form a resist mask 120 having a pattern for contact.
Next, as shown in FIG. 7(D), the layer insulating film 110 is etched to form a contact hole so as to expose a part of the surface of the TMR film 106.
Next, as shown in FIG. 7(E), an Al wiring layer 108 is deposited. In this case, the wiring layer 108 is formed also on the inner face of the contact hole, so that the wiring on the layer insulating film 110 and an upper electrode of the TMR film 106 are connected electrically.
As described in the above, in such technique, the upper Al wiring layer is formed after the layer insulating film on the TMR film is removed by means of a dry etching that uses the patterned resist film as a mask, thereby establishing contact to the top part of the TMR film.
However, in the above process, the shape of the contact hole is determined by the patterning of the resist film. Moreover, a margin for mismatch between the TMR film and the contact hole is required to be secured in the process. As a result, there is a problem in that the contact between the top part of the TMR film and the upper wiring was not assured in a self-aligned manner, which was a stumbling block in advance toward refinement of the device.
Moreover, the thickness of the wiring layer in the cross-section of the contact hole is decreased due to incomplete filling of the contact hole in the formation process of the upper wiring layer. As a result, there are problems in that the sectional area of the upper wiring layer directly above the contact is reduced, and that the migration due to a writing current is increased.
Furthermore, in order to establish contact to the top part of the TMR film, it is necessary to remove the layer insulating film as deep as to the top part of the TMR film by means of plasma etching that uses the patterned resist film as a mask. As a result, there is a problem in that the yield of the TMR film is lowered due to the damage to the TMR film caused by the plasma etching.
In conjunction with the above description, a magnetic field detection element is disclosed in Japanese Patent Applications Laid Open, No. 2000-206220. In this citation, the magnetic field detection element is equipped with a perovskite type conductive oxide magnetic material electrode, a ferromagnetic metal electrode and an insulating film. The insulating film is disposed between the two electrodes, and detects a tunneling current. Moreover, the insulating film has a sufficient thickness which can shield off the exchange magnetic coupling between the two electrodes.
Furthermore, a tunnel magnetoresistive head is disclosed in Japanese Patent Applications Laid Open, No. 2001-34919. In this citation, the tunnel magnetoresistive head has a tunnel multilayer film obtained by laminating a tunnel barrier layer, a ferromagnetic free layer formed so as to sandwich the tunnel barrier layer, and a ferromagnetic pinned layer. In this head, a tunnel barrier layer and a nonmagnetic metal protective layer are formed sequentially on the ferromagnetic pinned layer. A side insulating layer is formed on both sides of the laminate that includes the ferromagnetic pinned layer, the tunnel barrier layer and the nonmagnetic metal protective layer. The surface of the nonmagnetic metal protective layer is cleaned, and a ferromagnetic free layer is formed so as to oppose the ferromagnetic pinned layer via the treated surface of the protective layer.
It is an object of the present invention to provide a magnetic memory and its method of manufacture by which the contact film between the TMR laminated film and the upper wiring can be formed in self-aligned fashion.
It is another object of the invention to provide a magnetic memory and its method of manufacture by which plasma damage to the TMR laminated film due to the etching of the layer insulating film can be eliminated.
It is another object of the invention to provide a magnetic memory and its method of manufacture by which reliability in a data writing current to the TMR laminated film can be enhanced.
It is another object of the invention to provide a magnetic memory and its method of manufacture by which the data writing current to the TMR laminated film can be reduced.
It is another object of the invention to provide a magnetic memory and its method of manufacture by which the line width of the wiring and the space between the wirings can be reduced so as to achieve the high density of the device.
According to a viewpoint of the present invention, the magnetic memory is equipped with a TMR laminated film formed on a first conductive film, and a second conductive film, formed on the TMR laminated film, having the same plane shape as the TMR laminated film.
Here, in the magnetic memory of this invention, the second conductive film has a flat surface. Moreover, the magnetic memory according to this invention may further be equipped with a first insulating film, formed so as to surround the TMR laminated film and the second conductive film, having a flat surface with the same height as the surface of the second conductive film, and a third conductive film, formed on the first insulating film, electrically connected to the second conductive film.
Moreover, from another viewpoint of this invention, the magnetic memory is equipped with a plurality of transistors formed in a matrix form on a substrate, first layer insulating films formed so as to cover the plurality of the transistors, a plurality of first conductive films formed on the plurality of transistors so as to expose only their top faces from the first layer insulating films, where respective films of the plurality of the first layer insulating films are connected to either one of the drain and the source of a plurality of the transistors of the corresponding columns, a plurality of magnetic memory elements formed on respective films of the plurality of the first layer insulating films, where respective elements of the plurality of the magnetic memory elements have TMR laminated films sandwiched between the corresponding films of the plurality of the first layer insulating films and the second conductive film, a second layer insulating film formed on the first layer insulating films with the same height as the height of the uppermost layer film so as to cover the plurality of the first layer insulating films, and so as to expose the top faces of the uppermost layer films of the plurality of the magnetic memory elements, and a plurality of third layer insulating films formed on the second layer insulating film, where respective films of the plurality of the third layer insulating films are connected electrically to the uppermost layer films of respective columns of the plurality of the magnetic memory elements.
From another viewpoint of the invention, the manufacturing method of the magnetic memory is equipped with a first step of laminating sequentially a first conductive layer, a TMR laminated layer, a second conductive layer and a soft magnetic layer on a first insulating film, a second step of forming a first hard mask by patterning the soft magnetic layer and the second conductive layer, a third step of forming a first conductive film by patterning the TMR laminated layer and the first conductive layer using the first hard mask, a fourth step of forming a soft magnetic film and a second conductive film as a second hard mask by patterning the patterned soft magnetic layer and the patterned second conductive layer, a fifth step of forming a TMR laminated film by patterning the patterned TMR laminated layer using the second hard mask, a sixth step of forming a second insulating film on the first insulating film so as to cover the first conductive film, the TMR laminated film, the second conductive film and the soft magnetic film, a seventh step of removing the second insulating film to the extent that the top face of the soft magnetic film is exposed, and an eighth step of forming a third conductive film on the second insulating film after removal so as to be connected electrically with the soft magnetic film.
From another viewpoint of the invention, the manufacturing method of the magnetic memory is equipped with a first step of laminating sequentially a TMR laminated layer and a conductive layer on a first conductive film, a second step of forming a second conductive film as a hard mask by patterning the conductive layer, a third step of forming a TMR laminated film by patterning the TMR laminated layer using the hard mask, a fourth step of forming an insulating film on the first conductive film so as to cover the first conductive film, the TMR laminated film and the second conductive film, a fifth step of removing the insulating film to the extent that the upper face of the second conductive film is exposed, and a sixth step of forming a third conductive film on the insulating film after the removal so as to connect it electrically to the second conductive film.
Moreover, from another viewpoint of the invention, the manufacturing method of the magnetic memory is equipped with a first step of laminating a TMR laminated layer, a conductive layer and a soft magnetic layer on a first conductive film, a second step of forming a soft magnetic film and a second conductive film as a hard mask by patterning the soft magnetic layer and the conductive layer, a third step of forming a TMR laminated film by patterning the TMR laminated layer, a fourth step of forming an insulating film on the first conductive film so as to cover the first conductive film, the TNR laminated film, the second conductive film and the soft magnetic film, a fifth step of removing the insulating film to the extent that the top face of the soft magnetic film is exposed, and a sixth step of forming a third conductive film on the insulating film after removal so as to connect it electrically to the soft magnetic film.
Moreover, from another viewpoint of the invention, the manufacturing method of the magnetic memory is equipped with a first step of sequentially laminating a TMR laminated layer and a conductive layer on a first conductive film, a second step of forming a second conductive film as a hard mask by patterning the conductive layer, and a third step of forming a TMR laminated film, with its topmost layer being the second conductive film, by patterning the TMR laminated layer.
As described in the above, in the present invention, the shape machining (milling process or etching process) of a tunnel magnetoresistive element (TMR laminated film) is carried out using a hard mask. In this way, the TMR laminated film can be formed in self-aligned fashion. Moreover, the thickness of the hard mask is set to be approximately equal to the thickness of the layer insulating film formed after the shape machining, and the contact to the upper part of the TMR laminated film is established through exposure of the hard mask by CMP. As a result, the contact can be established easily with high accuracy even if a refinement in the TMR laminated film is advanced. In addition, since the conventional method of etching the layer insulating film by means of a plasma is done away with, it is possible to eliminate the damage to the TMR laminated film by the plasma. Moreover, since the wiring above the TMR laminated film is formed on a plane, stability of the writing current and reliability of the wiring can be enhanced. Besides, it is possible to reduce the current required for writing by inserting a soft magnetic film between the upper wiring and the TMR laminated film.

Magnetic memory and method of its manufacture


Provided is an image capturing device including a motion determination unit that determines the presence/absence of motion in a plurality of pixels on the basis of an addition signal of the plurality of pixels to obtain a motion determination result, and a transmission control unit that controls whether or not to transmit image data corresponding to at least the plurality of pixels on the basis of the motion determination result.

In recent years, various image capturing devices have been developed. For example, an image capturing device which compresses image data of an area with motion at a first compression ratio and compresses image data corresponding to an area without motion at a second compression ratio, which is a higher compression ratio than the first compression ratio, has been disclosed (see Patent Document 1, for example). According to such an image capturing device, image data corresponding to an area with motion can be compressed with a higher image quality than image data corresponding to an area without motion.
In addition, an image capturing device which switches an operation mode between a first mode and a second mode has been disclosed (see Patent Document 2, for example). In the first mode, a digital signal (image data) is generated on the basis of an analog signal obtained by image capturing. On the other hand, in the second mode, the digital signal processing circuit is not driven while no difference is detected in the analog signal, and the operation mode transitions to the first mode in a case where a difference is detected in the analog signal.

Image capturing device, image capturing method, and image capturing system

SONY SEMICONDUCTOR SOLUTIONS CORPORATION


A connector and method of connecting two surfaces in an irregular, interrupted, or non-uniform space is provided. The connector is composed of at least one link, wherein each link has an adjustable spatial feature such as the length, thickness, or angle of the link. The spatial features of the links are adjusted to custom fit the connector to the two surfaces and the available space therebetween. Once the links have been adjusted to provide a satisfactory custom fit, the adjustable spatial features of the links may be fixed to form a substantially permanent solid structure or may be recorded to allow production of a custom shaped connector with substantially the same spatial features as the custom fit connector.

1. Field
The present disclosure is directed to a structural link or measuring device between two randomly positioned surfaces. The link is especially useful in securing new components into pre-existing spaces having widely varying shapes and contours, such as securing battery packs in electric vehicles, and will be described in connection with such utility. The connector may also be used as a measuring device for fabricating more customized connecting hardware.
2. Description of Related Art
As people have become more aware of the scarcity of limited natural resources, significant resources have been directed at reusing or recycling existing materials and infrastructure. This trend is most clearly evidenced in the automobile industry, as federal and state mandates have required cars and trucks to become more efficient. In theory, electric cars have strong advantages over gasoline cars. Pure electric cars have no emissions, and the electricity they use can come from a variety of sources. They have few moving parts and require little maintenance. For the same reason, they do not break down often and are more reliable than gasoline cars. Most of all, they are much more energy efficient than gasoline cars.
Notwithstanding the differences in efficiency, gasoline cars continue to dominate the passenger car and light truck market, and virtually every vehicle on the road today is powered by a gasoline or diesel engine. To improve consumption, and reduce emissions, car makers have, among other things, modified gasoline engines to burn cleaner, unleaded gasoline; installed catalytic converters and developed sophisticated exhaust control systems. Famously, some manufacturers are beginning to offer new vehicles with an electric motor or combination of electric and backup gasoline motors. These new electric vehicles are heavily subsidized, and remain quite costly for most consumers. Few dispute that an electric car, if economically viable and widely accepted, would greatly reduce air pollution in major cities, decrease carbon emissions, and lessen reliance on oil imported from unstable areas.
Many parts of a gasoline car and an electric car are essentially identical. Electric motors and drive trains have been engineered and created having a wide variety of shapes, sizes, and capabilities, but are rarely used to replace existing gasoline or diesel motors in existing vehicles or existing car designs. Part of the problem in converting a gasoline driven vehicle into an electrically driven vehicle is coupling the new motor to the drive train of the existing gasoline driven vehicle. Substantial modification may need to be made to secure the new motor in the old vehicle. Some attempts at converting gasoline vehicles to electric vehicles, such as that shown in US 2009/0229895, even use a "push" trailer that may be coupled to the gasoline vehicle frame to provide the electrically driven motive force to the vehicle. Moreover, battery and electric technology is changing much faster than traditional mechanical technology. As the size and shape of components for electric vehicles rapidly change, a need exists to securely install a new component in a space designed for accommodating an older version of a component.
Current methods of securing a conversion component into a variably shaped space are extremely cumbersome. The ideal location for the replacement component must be determined and distances from component surfaces to the surface of the compartment in which the component is to be installed must be painstakingly calculated. Usually, direct connections from a stable surface to the component are unavailable and mounting hardware must be custom designed with one, and possibly multiple, angled portions in order to secure the replacement component into the space available. Expensive three dimensional modeling software may be employed, but still may not exactly resemble the actual physical articles involved, leading to complications in installing hardware in the physical world.
One of the most difficult problems in installing electric-drive components into a car that has had all of its gas-burning components removed will be in converting a car's body space that had formerly contained a gas tank to now house and secure a battery pack. The body sheet metal creating newly available space will likely be extremely irregular, not having been created to accommodate anything other than the former gas tank. A need accordingly exists for a more efficient method and apparatus of securing a conversion or replacement component having some shape into an existing space that has an irregular shape. A need further exists for a more efficient system and method for measuring or modeling an effective support hardware structure in situ for securing a component in an irregular space.

System and method of connecting surfaces in an irregular space or measuring an irregular space


A data communication system comprising a terminal unit for generating light signals responsive to status of switches and a control unit for receiving the signals spatially propagated and controlling operation of a predetermined load, wherein switches 11 and 12 are interposed between plus and minus lines 51 and 52 as power lines for supplying electric power from the control unit to the terminal unit, and connected in series with respective resistors R1 and R2 having different values of resistance, and the minus line is grounded in the control unit 30 through resistor R0. Potential of the minus line changes in response to switches 11 and 12, and electronic signals indicative of the status of the switches are transmitted to the control unit separately from the light signals. Thus, even if the spatial propagation of the light signals is interrupted, the control over the operation of the load is secured.

1. Field of the Invention
The present invention relates to a data communication system suitable for securely transmitting signals (data) indicative of status of a plurality of switches located in a terminal unit to a control unit for controlling operation of a predetermined load.
2. Description of the Prior Art
In recent years, it has been common to control the operation of various kinds of loads, such as a motor and the like, by using a LAN system mounted in an automobile. For example, the activation of a motor for operating a vehicle seat is controlled by tripping the switches mounted in the seat to adjust the position and posture of the seat. In this case, generally, a wire harness is used to connect a control unit for controlling the operation of the predetermined load (motor for operating the seat) with a terminal unit comprising a plurality of switches and sensors. Through the wire harness, switch signals and sensor signals which are detected in the terminal unit are transmitted to the control unit.
Along with an increase of the controlled objects (loads), however, the number of signals (amount of data) in multiplied, which is accompanied by the growth of the lying amount of wire harnesses (the number of signal wires). Given this factor, it is proposed to transmit data (switch signals or sensor signals) from the terminal unit to the control unit through spatial propagation using light signals, such as infrared ray lights or the like, in order to reduce the lying amount of the wire harnesses.
The terminal unit which performs the foregoing optical communication comprises a processing unit (CPU) as main part, he processing unit driving a light-emitting device, such as an infrared-emitting diode or the like, according to the status of a plurality of switches and transmitting light signals of the predetermined frame structure. On the other hand, the control unit comprises an electronic control unit (ECU) as major component, the electronic control unit receiving the light signals by means of a light-receiving device, such as a photo transistor or the like, detecting the switch status, and then controlling the activation of the motor for operating the seat on the basis of the result of the detection.
In the communication system which spatially propagates the light signals, however, there is a fear, for example, that the baggage placed near the seat enters the propagation space of the light signals between the light-emitting device and the light-receiving device. If this happens, the light signals transmitted from the terminal unit is blocked by the baggage (obstacle), so that it is impossible to detect the light signals (switch status) in the control unit. In case that the processing unit (CPU) located in the terminal unit breaks down or that the light-emitting device stops emitting lights, no light signal is output, which makes it impossible for the control unit to detect the switch status.


A light emitting diode (LED) backlight system and a driving apparatus and a driving method thereof are provided. The driving apparatus is suitable for an LED backlight system with N LED strings, where N is a positive integer greater than 1, and which includes an LED driver and a switching unit. The LED driver is configured to receive a dimming signal and time-divisionally generate N control signals in response to a counting clock and an enabling time and a period time both related to the dimming signal. The switching unit is coupled to the LED driver and the N LED strings, and is configured to respectively control an on-off time ratio of a current flowing through each of the LED strings in response to the N control signals.

In recent years, with the advancement of semiconductor technologies, portable electronic products and flat panel displays are developed rapidly. Among various flat panel displays, liquid crystal displays (LCDs) free of harmful radiation and characterized by low operating voltage, light weight, and small volume have become the mainstream display products of the market. Generally speaking, since the LCD panel has no luminescent function itself, a backlight module is required to be disposed under the LCD panel, so as to provide a backlight source to the LCD panel.
The conventional backlight modules are broadly divided into cold cathode fluorescent lamp (CCFL) backlight modules and light emitting diode (LED) backlight modules, in which the LED backlight module can improve a color gamut of the LCD, and thus the current panel manufacturers generally employ the LED backlight modules to replace the CCFL backlight modules.
The LED backlight module has a plurality of LED strings arranged in parallel, and each of the LED strings is composed of a plurality of LEDs connected in series. In an actual application, all the LED strings can be operated under a system voltage (VBUS) generated by a boost unit, so as to maintain the same constant current for the current flowing through each of the LED strings.
On the other hand, in some applications, there might be requirements for adjusting brightness because of being cooperated with ambient light or the displayed frames being different. At this current stage, the most commonly used method is to provide a dimming signal in order to simultaneously control an on-off time ratio of the current flowing through each of the LED strings and to achieve the purpose of dimming through using persistence of vision. However, such method causes the momentary load of the boost unit for providing the system voltage (VBUS) to be intensified when the provided dimming signal is enabled, and there will be no load existed when the dimming signal is disabled. By this way, the following three issues are derived:
1. the ripple of the system voltage (VBUS) provided by the boost unit will be increased, thereby causing the instability of the current flowing through each of the LED strings;
2. the voltage conversion ratio of the boost unit is deteriorated in response to the intensified momentary load of the boost unit; and
3. the phenomenon of higher electromagnetic interference (EMI) will be occurred in response to the large current caused by the intensified momentary load of the boost unit.

Light emitting diode backlight system the driving apparatus and driving method thereof


A media loading device includes a detachable stiffener that is detachably connected to a leading portion of a soft media and supports the leading portion of the soft media during threading of the soft media through a media path of a printer. A method for loading soft media includes detachably connecting a leading edge of soft media onto a detachable stiffener and placing the detachable stiffener and soft media into a printer. The detachable stiffener and soft media are fed through the media path in the printer.

Soft media is frequently used as a substrate for printing. Soft media can be formed from a variety of compliant materials such as polymer films, woven fabrics, porous films or other thin and flexible materials. When printed with a desired image, the soft media can be used as banners, flags, covers for three dimensional shapes, and other applications. The soft media has a tendency to easily bend, fold, and wrinkle. This can make soft media challenging to thread through a media path in a printer.
Throughout the drawings, identical reference numbers designate similar, but not necessarily identical, elements.

Hewlett-Packard Development Company, L.P.


In response to a user's selection of a troubleshooting instruction element on a troubleshooting page displayed on a client 200 by a browser, the client 200 transmits a transfer request of a troubleshooting program to servers 110 and 120. The servers 110 and 120 transfer the troubleshooting program according to the transfer request. The troubleshooting program is automatically activated on the client 200 on completion of its download to the client 200, in order to execute a troubleshooting procedure.

1. Field of the Invention
The present invention relates to a technique of troubleshooting a peripheral device linked with a client computer in a network environment including a server computer and the client computer connected with each other via the Internet.
2. Description of the Prior Art
A diversity of peripheral devices, such as a printer and a scanner, are connected to a personal computer via respective external interfaces. In the case of any abnormality or trouble arising in such a peripheral device, the user should conventionally refer to an instructions manual of the peripheral device. With advancement of recent technology, many user support pages for supporting users are open to the public on the Internet by manufacturers and dealers of the peripheral devices. Details of troubleshooting each peripheral device are on such a user support page provided by each of the manufacturers and dealers. It is, however, rather troublesome for the user to refer to the instructions manual or refer to the user support page for troubleshooting the peripheral device. General users often have difficulties in understanding the details of troubleshooting. Namely troubleshooting is rather complicated and difficult for the general user of the peripheral device.
One known system troubleshoots each peripheral device of the computer via the Internet by FAQ (Frequently Asked Questions) technique. The system provides the computer in an interactive manner with a question answer window of hierarchical structure, which includes questions on common problems and troubles of each peripheral device and answers to the questions. This shows the user possible causes of a problem arising in a target device and possible measures to the problem, so as to enable solution of the problem on the user's side. This systems, however, urges the user to choose one answer among options prepared in advance for each question, regardless of the working environment of the peripheral device by the user. The user can thus not choose a precise answer in some working environment of the peripheral device. In such cases, this system proposes neither an appropriate cause nor an effective measure to the user's problem.
As mentioned above, the diversity of peripheral devices, such as a printer and a scanner, are connected to the personal computer via the respective external interfaces. Installation of a driver program applicable for each peripheral device in the personal computer is required for the accurate operations of the peripheral device. Frequent version upgrading of the driver program corresponding to each peripheral device is commonly performed to ensure the more accurate operations of the peripheral device. In order to attain the more accurate operations of the peripheral device, it is accordingly necessary to install the driver program of the latest version in the personal computer. The user is thus required to select a latest driver program according to the type of the peripheral device and the linguistic environment of the personal computer and install the selected driver program. There are lots of difficulties in such installation for the users who do not have sufficient knowledge of the personal computer and the peripheral device.


A position detection device includes a magnet and a magnetic detector. The magnet includes a first pole, a second pole, a third pole and a fourth pole. The first pole and the second pole are arranged spaced apart from each other and have a same magnetic polarity. The third pole and the fourth pole are arranged spaced apart from each other and have a magnetic polarity different from the magnetic polarity of the first pole and the second pole. The first pole faces the third pole. The second pole faces the fourth pole. The magnetic detector is configured to detect magnetism of the first pole, the second pole, the third pole, and the fourth pole.

1. Field of the Invention
The present invention relates to a position detection device, a two-dimensional position measuring apparatus, an optical apparatus and a position detection method.
2. Discussion of the Background
A position detection device that includes a magnet and a magnetic sensor is known. An image blur correction apparatus that includes such a position detection device is disclosed in Japanese Laid-open Patent Publication No. 2002-229090.
However, the above-mentioned apparatus has a problem that a variation of an error component in a detection signal with respect to a relative displacement in a direction perpendicular to the direction of position detection is considerable for each position in the direction of position detection, which would result in a decrease in precision of position detection.

Position detection device, two-dimensional position measuring apparatus, optical apparatus and position detection method


A semiconductor memory cell is formed in a substrate and includes a capacitor, a transistor, and an electrical contact. The transistor includes a doped region which is disposed in the substrate. An insulation layer is disposed on the substrate and the transistor. The capacitor is disposed on the insulation layer and includes a bottom capacitor electrode, a capacitor insulator on the bottom capacitor electrode, and a top capacitor electrode on the capacitor insulator. The bottom capacitor electrode is conductively connected to the doped region of the transistor through the use of the contact. Because the bottom capacitor electrode is conductively connected to the doped region only after the recrystallization of the capacitor insulator, the recrystallization step does not damage the electrical contact.

The invention relates to a semiconductor memory cell and a method for fabricating a semiconductor memory cell.
A semiconductor memory cell can be configured as a DRAM (Dynamic Random Access Memory) cell. The semiconductor memory cell may also be configured as a ferroelectric memory cell. These memory cells include a selection transistor and a capacitor. Depending on the construction, the capacitor is a ferroelectric capacitor with a ferroelectric material or a storage capacitor with a dielectric material. The memory cell is referred to as a stacked memory cell if the selection transistor is formed in a substrate, and the storage capacitor is formed over the selection transistor and the substrate. If a ferroelectric material is utilized for capacitor insulation, for instance if PZT (lead zirconate titanate) or SBT (strontium bismuth tantalate) is used, then a temperature step must be performed in an oxygen atmosphere at over 600xc2x0 C. for longer than a half hour in order to crystallize the ferroelectric material, so that it develops its advantageous ferroelectric characteristics. The disadvantage of exposing the substrate to elevated temperature in an oxygen atmosphere is that conductive regions, for instance silicon or polysilicon regions, are oxidized and thus no longer act as a conductive connection, but rather as an insulator. This can interrupt the electrical connection of the ferroelectric capacitor to the selection transistor.
According to an integration concept of a ferroelectric offset storage cell which is known from the prior art, the lower electrode, which faces the substrate, of the ferroelectric capacitor is fashioned as the common electrode, and the upper electrode of the ferroelectric capacitor forms the respective storage node. This configuration is able to withstand temperature steps at high temperatures in an oxygen atmosphere, because the contact for the electrical connection between the ferroelectric capacitor and the selection transistor is not produced until after the temperature step for recrystallizing the ferroelectric material. As a consequence, an oxidation of this contact owing to the recrystallization is out of the question. The disadvantage of this cell configuration is that the substrate area occupied by this memory cell is larger than 15 F2. F represents the minimum lithographically achievable dimension of the underlying semiconductor technology. This is substantially larger than the 8 F2 which is common today for a DRAM cell. As a consequence, the integration density of this configuration is not particularly large.
According to another configuration of a ferroelectric memory cell taught by the prior art, memory cells of less than 8 F2 are possible. Because the memory node is situated over the selection transistor, this cell configuration is referred to as a stacked cell. Here, the bottom electrode of the storage capacitor is the storage node, and the top electrode can be constructed as a common counterelectrode of all storage capacitors. Alternatively, the counterelectrode can also be structured individually. In this concept, a conductive terminal is required between the bottom electrode and the selection transistor. Because this terminal is usually formed before the ferroelectric capacitor is formed and must therefore endure the temperature step in an oxygen atmosphere, this electrical terminal is normally protected from oxidation at great expense, including additional costs and processing steps. Furthermore, the ferroelectric capacitor must also be protected from the silicon that diffuses out of the electrical contact. The barrier materials that are known from the prior art are presently not able to withstand a temperature step at an elevated temperature, such as would be required for the recrystallization of a ferroelectric material in order to achieve optimal characteristics. Therefore, lower temperatures and shorter time periods are selected for annealing the ferroelectric layer than would be necessary for an optimal ferroelectric character. Furthermore, when recrystallization temperatures are too low, the tendency of SBT is that large leakage currents flow through it. In addition, greater damage can be caused by hydrogen than would be the case given a well crystallized SBT.
U.S. Pat. No. 5,719,416 describes a semiconductor memory cell with a selection transistor and, provided next to this over the semiconductor substrate, a planar storage capacitor. The storage capacitor includes an elongated lower electrode facing in the direction of the transistor. A doped region of the transistor and the elongated portion of the lower electrode of the capacitor are connected to one another. The connecting contact leads through the insulation layer that separates the transistor and the capacitor, and it touches the elongated portion of the capacitor on this top surface, i.e. the surface which is averted from the substrate.
U.S. Pat. No. 5,604,145 teaches a semiconductor memory cell with a capacitor provided over the selection transistor and the semiconductor substrate. A bottom layer of the capacitor is connected to a doped region of the transistor via a vertical contact.
Published European Patent Application No. EP 0 971 392 discloses a memory cell with a selection transistor and a capacitor with a planar layer sequence alongside thereto.
It is accordingly an object of the invention to provide a semiconductor memory cell having a transistor and a capacitor that overcomes the above-mentioned disadvantages of the heretofore-known memory cells of this general type. A further object of the invention is to provide a method for fabricating a semiconductor memory cell.
With the foregoing and other objects in view there is provided, in accordance with the invention, a semiconductor memory cell, including:
a substrate having a surface;
a transistor including a doped region disposed in the substrate;
an insulation layer disposed on the substrate and on the transistor;
an electrically conductive contact extending from the doped region through the insulation layer;
a conductive contact layer disposed on the insulation layer, the conductive contact layer having a first surface facing the surface of the substrate, having a second surface averted from the surface of the substrate, and having a lateral surface connecting the first surface of the conductive contact layer to the second surface of the conductive contact layer;
the electrically conductive contact touching the lateral surface of the conductive contact layer;
a capacitor including a bottom capacitor electrode disposed above the insulation layer, a capacitor insulator disposed on the bottom capacitor electrode, and a top capacitor electrode disposed on the capacitor insulator; and
the electrically conductive contact conductively connecting, via the conductive contact layer, the bottom capacitor electrode to the doped region disposed in the substrate.
In other words, with respect to the semiconductor memory cell, the object of the invention is achieved by a semiconductor memory cell including:
a capacitor, a transistor, a substrate with a surface, and an electrically conductive contact, whereby:
the transistor includes a doped region which is disposed in the substrate;
a first insulation layer is disposed on the substrate and on the transistor;
the electrically conductive contact extends from the doped region through the first insulation layer;
a conductive contact layer is disposed on the first insulation layer; and the conductive contact layer includes a surface facing the surface of the substrate, a surface that is averted from the from the surface of the substrate, and a lateral surface which connects these surfaces;
the capacitor includes a lower capacitor electrode, which is provided over the first insulation layer; a capacitor insulator, which is provided on the lower capacitor electrode; and an upper capacitor electrode, which is provided on the capacitor insulator;
the electrically conductive contact conductively connects the lower capacitor electrode to the doped region via the contact layer; and
the electrically conductive contact touches the lateral surface of the contact layer.
The electrical contact is provided so as to connect the lower capacitor electrode to the doped region. The electrical contact therein is provided alongside the capacitor. This way, a contact hole can be formed in the first insulation layer next to the capacitor without impairing the top capacitor electrode. The bottom capacitor electrode is subsequently electrically connected to the doped region of the transistor through the use of the contact material with which the contact hole is filled.
The contact to the bottom electrode can be self-aligning relative to a conductive layer on which the bottom capacitor electrode is disposed. This layer can include a noble metal or consist of a noble metal. The conductive layer can be buried under the capacitor and protrude alongside the capacitor. The contact hole which is formed beside the capacitor can then partially expose the conductive layer, and a contact material which is filled into the contact hole can conductively connect the conductive layer to the doped region of the transistor. If the conductive layer contains a noble metal, the formation of a non-conductive layer as a result of the thermal recrystallization of the ferroelectric material can be prevented. Another advantage is that the capacitor can be subjected to thermal annealing steps for recrystallization before the electrical contact is formed. This way, temperature steps can even be carried out at temperatures above 800xc2x0 C. and for longer than 45 minutes. With the temperature step, a ferroelectric material acquires optimal characteristics. Another advantage is that the capacitor is completely formed before the electrical contact is formed. In addition, it is possible to forgo an additional diffusion barrier such as would be required for protecting an electrical contact in a recrystallization step at high temperatures. This simplifies the procedure and lowers the costs. Furthermore, it is possible to utilize a substantially thinner bottom electrode than is typically necessary in order to guarantee a diffusion barrier effect for the electrical contact.
Another advantage is that the dielectric or ferroelectric layer is deposited on a planarized wafer surface. The advantage of this is that an increased conformity of the dielectric layer or ferroelectric layer is possible. Another advantage is that the memory node has no additional topology. This is advantageous because the applied dielectric material or ferroelectric material is not stressed by edges or curves at which electrical breakdowns could occur. Another advantage is that the capacitor can be structured with a single masking step. For instance, standard titanium or titanium nitride barriers are suitable for preventing the interaction between the electrical connection and the conductive layer which contains a noble metal and on which the capacitor is formed.
Besides this, what is known as a landed via concept is possible. Here, conductive contacts are formed in a bottom insulating layer as plugs in contact holes. Next, the top insulating layer is applied. According to the invention, a capacitor with a strap is produced in the top dielectric. Contact holes in the top insulating layer are so structured that the surface of the bottom contact plugs in the bottom insulating layer is exposed, so that the contact plugs in the top insulating layer are in conductive contact with the bottom electrode with the bottom contact plugs.
The advantage of the solution according to the invention is that substantially fewer mask exposure steps and thus substantially fewer processing steps are needed, which makes the fabrication process more cost-effective and enables a higher yield.
Furthermore, a memory cell requires only a small portion of the substrate surface, because there is a partial overlap between the bottom capacitor electrode and the conductive layer. As a result, the cell is considerably smaller than an offset cell, in which the top capacitor electrode represents the memory node and is connected to the doped region of the transistor through the use of an electrical contact alongside the capacitor.
For instance, the conductive contact layer can contain platinum or iridium or iridium oxide.
In this application, the term capacitor insulator refers to the insulation between the two electrodes of the capacitor. The capacitor insulator can include a dielectric or ferroelectric material.
An advantageous development of the semiconductor memory cell provides that the electrical contact extend from the doped region through the first insulating layer.
According to another feature of the invention, the electrically conductive contact also touches the conductive contact layer at the second surface averted from the surface of the substrate.
An advantageous development of the invention provides that a conductive contact layer be disposed on the first insulation layer, and that the bottom capacitor electrode be disposed on the conductive contact layer. The conductive contact layer can be slightly out of alignment with respect to the bottom capacitor electrode, i.e. offset relative to it, so that the electrical contact from the doped region through the insulation layer contacts the conductive contact layer but does not touch the capacitor itself.
Another advantageous development of the semiconductor memory cell provides that a second insulation layer be disposed between the first insulation layer and the conductive contact layer. The second insulation layer can act as a diffusion barrier for oxygen and, respectively, for silicon or as an etch stop layer during memory cell fabrication. In a preferred exemplary embodiment, this layer is formed of silicon nitride.
Another advantageous development of the semiconductor memory cell according to the invention provides that a third insulation layer be disposed on the second insulation layer alongside the conductive contact layer. The third insulation layer is disposed alongside the conductive contact layer as a filler material, so that the substrate surface with the embedded conductive contact layer can be planarized by a CMP (Chemical Mechanical Polishing) procedure. The contact layer can be polished (damascene process), but also the third insulation layer, optionally together with the hard mask from the structuring of the contact layer. The advantage of this is that a subsequently deposited dielectric or ferroelectric layer will be deposited on a plane substrate surface and can thus be formed with higher quality.
Another advantageous development of the semiconductor memory cell according to the invention provides that the bottom capacitor electrode include the conductive contact layer. This means that the bottom capacitor electrode is formed somewhat larger than the top capacitor electrode, so that in the formation of the contact hole for the electrical contact, the bottom capacitor electrode is exposed by the contact hole, while the top capacitor electrode remains untouched by the contact hole.
Another advantageous development of the semiconductor memory cell according to the invention provides that the electrical contact touches the conductive layer. This allows an electrical contact between the bottom capacitor electrode and the doped region of the transistor.
Another advantageous development of the semiconductor memory cell according to the invention provides that the conductive contact layer includes a surface on which the bottom capacitor electrode is disposed; the conductive contact layer includes a side wall which is disposed alongside the contact layer; and the electrical contact at least partly touches the surface and the side wall.
This allows a self-aligned electrical contact. In the etching of a contact hole, the conductive contact layer is exposed and acts as an etch mask, whereby a contact, which will subsequently fill the contact hole, touches the conductive layer both laterally and from above.
Another advantageous development of the semiconductor memory cell according to the invention provides that the top capacitor electrode includes a second surface, which is averted from the substrate; and the electrical contact includes a third surface, which is averted from the substrate; and the third surface is further than the second surface from the substrate.
The electrical contact can protrude beyond the capacitor.
With the objects of the invention in view there is also provided, a method of producing a semiconductor memory cell, the method includes the steps of:
providing a substrate;
forming a transistor on the substrate and forming a doped region of the transistor in the substrate;
depositing an insulation layer on the substrate and on the transistor;
forming a structured conductive contact layer with a first surface facing a surface of the substrate, with a second surface averted from the surface of the substrate, and with a lateral surface connecting the first surface and the second surface;
forming a capacitor insulator on the conductive contact layer;
forming a top capacitor electrode on the capacitor insulator;
performing a temperature step for recrystallizing the capacitor insulator;
subsequently forming a contact hole in the insulation layer such that the contact hole is laterally next to the top capacitor electrode and extends to the doped region; and
filling the contact hole with a conductive material such that the conductive contact layer is conductively connected to the conductive material at the lateral surface of the conductive contact layer.
In other words, with respect to the method, the object of the invention is achieved by a method for fabricating a semiconductor memory cell with the steps:
providing a substrate;
forming a transistor on the substrate, thereby forming a doped region of the transistor in the substrate;
depositing a first insulation layer on the substrate and on the transistor;
forming a structured conductive contact layer with one surface facing the surface of the substrate, one surface averted from the surface of the substrate, and a lateral region connecting these surfaces;
forming a capacitor insulator on the conductive contact layer;
forming a top capacitor electrode on the capacitor insulator;
carrying out a temperature step for recrystallizing the capacitor insulator;
next, forming a contact hole alongside the top capacitor electrode in the insulation layer, extending the hole to the doped region;
filling the contact hole with a conductive material, so that the conductive contact layer at the lateral surface is conductively connected to the conductive material.
Another mode of the invention provides that a contact hole be etched into the first insulation layer, exposing the doped region and the conductive contact layer, and that the contact hole is then filled with the electrical contact.
The advantage of forming the electrical contact afterward is that it cannot be affected by a temperature step for recrystallizing the capacitor insulator.
Another advantageous step provides that a bottom electrical contact be formed prior to the deposition of the capacitor insulator in the first insulation layer, and that the electrical contact be formed subsequent to the deposition of the capacitor insulator on the bottom electrical contact, and that it connects the bottom electrical contact to the conductive contact layer.
The electrical contact and the top electrical contact are suitable for realizing what is known as a landed via contact.
An additional advantageous step provides that a bottom capacitor electrode be formed between the conductive contact layer and the capacitor insulator. On one hand, the conductive contact layer can itself be utilized as the bottom capacitor electrode; or on the other hand, a bottom capacitor electrode can be additionally formed on the conductive contact layer, so that an etch selectivity can be achieved, for instance on the basis of the utilized materials. This also makes it possible to lead the contact through under the capacitor.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a semiconductor memory cell and method for fabricating a semiconductor memory cell, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.