A loss distribution calculation system including: a section that performs at least one of upside and downside discretizations for a scale distribution; a section that calculates, after dividing all events, a probability value of a cumulative sum of losses for a portion out of all events in order to calculate at least one of upside and downside sub-composite distributions, the upside sub-composite distribution being calculated based on the frequency distribution and the upside-discretized scale distribution, and the downside sub-composite distribution being calculated based on the frequency distribution and the downside-discretized scale distribution; a section that calculates upper and lower bounds of a loss distribution function based on at least one of the upside and downside sub-composite distributions, calculates a function, as an approximate value of the loss distribution function, based on at least one of the upside and downside sub-composite distributions, and calculates an accuracy of the approximate value.

In the field of damage insurance or operational risk management, the total sum of losses to be suffered during a specific period of time in the future is regarded as a probability variable, and a probability distribution function thereof needs to be calculated. Hereinafter, the "specific period of time in the future" is referred to as a holding period, "the total sum of losses to be suffered during the holding period" as a cumulative sum of losses, and the "probability distribution function that the cumulative sum of losses follows" as a loss distribution.
What is disclosed in NPL 1 is an example of a loss distribution calculation system of a related technology for calculating such a loss distribution. As disclosed in NPL1, the loss distribution calculation system typically performs a Monte Carlo simulation in which: a probability distribution about the number of loss events in the holding period (referred to as a frequency distribution, hereinafter), and a probability distribution about the scale of losses in each loss event (referred to as a scale distribution, hereinafter) are input into the loss distribution calculation system; random numbers N that follow the frequency distribution are generated, while N random numbers that follow the scale distribution are generated; a process of calculating the sum thereof as a cumulative sum of losses is performed many times as calculator experiments; and an empirical distribution of the resultant cumulative sum of losses is recognized as a calculation result of the loss distribution. Other publicly known methods include a method of analytically calculating a loss distribution by making a convolution operation more efficient.
In that regard, what is disclosed in PTL 1 is an operational risk quantification device including: a means for reading a transaction amount; a means for reading a loss rate density; a huge loss density calculation means for calculating a huge loss density on the basis of the transaction amount and the loss rate density; and a risk amount calculation means for calculating a risk amount from the calculated huge loss density.
What is disclosed in PTL 2 is an operational risk quantifying device, which quantifies an operational risk from a transaction amount distribution showing the state of distribution of transaction amounts and which includes: a smoothing means for smoothing the transaction amount distribution to create a smoothed transaction amount distribution; and an operational risk calculation means for calculating an operational risk from the smoothed transaction amount distribution created.
What is disclosed in PTL 3 is an operational risk management method for accumulating occurrences of a plurality of events associated with losses and managing an operational risk on the basis of the accumulated events. According to the operational risk management method, the transitional states of a plurality of events are set in response to each of a plurality of events that have occurred; in accordance with each of the transitional states of the events, a risk that will occur is predicted.

Loss distribution calculation system, loss distribution calculation method and loss distribution calculation-use program


Methods and systems for fabricating synthetic source rocks with organic materials, for example, using high energy resonant acoustic mixing technology, are provided. An example method includes preparing one or more organic components including kerogen, mixing, by utilizing resonant acoustic waves, the one or more organic components with one or more inorganic components to obtain a mixture, and processing the mixture to fabricate a synthetic source rock. Another example method includes mixing one or more organic components and one or more inorganic components with a kerogen precursor as an organic binder to obtain a mixture including artificial kerogen and processing the mixture to fabricate a synthetic source rock. One or more mechanical or chemo-mechanical properties of the synthetic source rock can be characterized as one or more functions of the one or more organic components and the one or more inorganic components.

Source rocks are compositionally diverse and complex lithofacies including a lithified composite of detrital and clay minerals comprised of organic matters that include kerogen, bitumen, and pyrobitumen. The diversity and complexity of the interwoven, inorganic and organic, nanoscale matrix presents a challenge in measuring its individual mechanical properties. In particular, measuring the mechanical moduli of the organic materials are difficult because of the uncertainty posed by the composite nature of the source shale rock.


The cereal-based charcoal binder utilizes unrefined non-corn whole grains to replace the conventional cornstarch binder in solid charcoal fuels. The whole grain material is ground up, mixed with water, gelatinized, and then mixed with at least one dry ingredient to produce the solid charcoal fuel product.

Current manufacturers primarily use refined starch (such as cornstarch) as a binder in the charcoal manufacturing process. However, cornstarch has become increasingly expensive. Among other things, the use of corn-based products for sweeteners and energy products (e.g. ethanol) is creating an increased demand and corresponding higher prices
To reduce manufacturing costs, charcoal product manufactures are exploring alternative binders and binder processes. Manufacturers have tried to eliminate some of the cornstarch binder by replacing the cornstarch with alternative binders such as clay and other similar materials. However, these alternative binders generally exhibit inadequate binding strength and the resulting modified charcoal products lack structural integrity. The modified products are unable to withstand the commercial manufacturing, packaging, and transportation processes.
The need exists for a charcoal binder that performs as effectively as the current cornstarch binder but has lower manufacturing costs. The current invention comprises an inexpensive, natural, non-corn binder that is equally as effective as the commercially available cornstarch binders. The inventors have found that (for example) an oat-based charcoal binder cost on average 40% less per pound than cornstarch. The current invention enables manufacturers to replace a high demand and high cost product with a (relatively) underutilized product, thereby decreasing manufacturing costs, broadening the base of the rural agricultural economy, and benefitting the American Farmer.

The United States of America, as represented by the Secretary of Agriculture


The present invention aims to provide a zinc electrowinning anode capable of inhibiting manganese compound deposition on the anode and a cobalt electrowinning anode capable of inhibiting cobalt oxyhydroxide deposition on the anode.

In zinc electrowinning, zinc ions (Zn2+) are extracted from a zinc ore, and an anode and a cathode are dipped into a solution (hereinafter, an electrolyte) containing the extracted zinc ions and current flows between the anode and the cathode, thereby depositing high-purity zinc on the cathode. The electrolyte is an aqueous solution typically acidified with sulfuric acid, and therefore the main reaction on the anode is oxygen evolution. However, in addition to oxygen evolution, another reaction occurs on the anode. The reaction is oxidation of divalent manganese ions (Mn2+) contained in the electrolyte. The manganese ions are mingled into the electrolyte during the zinc ion extraction process. Specifically, in the zinc ion extraction process, the zinc ore is subjected to oxidizing roasting and then zinc ions are leached in the sulfuric acid solution, while in the roasting, some zinc contained in the zinc ore reacts with iron, thereby forming zinc ferrite. Zinc ferrite is a compound difficult to leach zinc ions from, and therefore in the course of leaching, manganese ore, manganese dioxide or potassium permanganate is added as an oxidant, thereby oxidizing and removing zinc ferrite. In this manner, zinc ferrite becomes removable, but the final sulfuric acid electrolyte having zinc ions extracted therefrom contains divalent manganese ions.
In the above-described zinc electrowinning, lead or a lead alloy is used as the anode, but for reasons such as a high oxygen evolution potential, high electric energy consumption required for oxygen evolution, and purity of zinc deposited on the cathode being reduced by lead ions dissolved from the anode, an insoluble electrode, which has a conductive substrate, such as titanium, coated with a catalytic layer containing noble metal or noble metal oxide, has been increasingly used as an anode which overcomes disadvantages as mentioned above. For example, Patent Document 1 discloses a copper electrowinning method which uses an insoluble electrode covered with an active coating containing iridium oxide. An insoluble electrode having titanium as a conductive substrate which is coated with an iridium oxide-containing catalytic layer, particularly, a catalytic layer comprising iridium oxide and tantalum oxide, has high catalytic properties and high durability with respect to oxygen evolution from an acidic aqueous solution and is used as an anode for oxygen evolution in electrogalvanizing or electrotining of steel or producing electrolytic copper foil. For example, in Patent Document 2, the present inventor discloses an oxygen evolution anode capable of inhibiting lead dioxide deposition on the anode during electrolysis as an insoluble oxygen evolution anode suitable for copper plating or electrolytic copper foil production. In recent years, application of such an insoluble anode is also under study in the field of metal electrowinning.
Also, in cobalt electrowinning, divalent cobalt ions (Co2+) are extracted from a cobalt-containing ore, and the anode and the cathode are dipped in a solution (hereinafter, an electrolyte) containing the extracted cobalt ions and current flows between the anode and the cathode, so that high-purity cobalt is deposited on the cathode. The solution is typically an acidic aqueous solution, and typical examples of the electrolyte include a chloride-based electrolyte obtained by dissolving divalent cobalt ions in an aqueous solution containing chloride ions typically acidified with hydrochloric acid and a sulfuric acid-based electrolyte obtained by dissolving divalent cobalt ions in an aqueous solution acidified with sulfuric acid. In cobalt electrowinning, the anode and the cathode are dipped in the electrolyte, a certain amount of cobalt is deposited on the cathode, and then the cathode is removed to recover cobalt. On the other hand, in the case where a chloride-based electrolyte is used, typically, the main reaction on the anode is chlorine evolution, and in the case where a sulfuric acid-based electrolyte is used, the main reaction is oxygen evolution. However, the main reaction on the anode may vary depending on the type of reaction to which the anode has catalytic properties, and both chlorine evolution and oxygen evolution may occur.
In the above-described cobalt electrowinning, a lead-based electrode, such as lead or a lead alloy, is mainly used as an anode, which is disadvantageous, for example, in that the anode reaction occurs at high potential, hence high electric energy consumption is required for the anode reaction, and lead ions dissolved from the anode reduce the purity of cobalt deposited on the cathode. Also, in the case where the lead-based electrode is used as an anode, chlorine or oxygen evolution, the main reaction on the anode, occurs, and simultaneously, a side reaction occurs in which divalent cobalt ions contained in the electrolyte are oxidized, so that cobalt oxyhydroxide (CoOOH) is evolved on the anode, and the divalent cobalt ions in the electrolyte that should be originally reduced on the cathode through the reaction are unnecessarily consumed on the anode. On the other hand, in such cobalt oxyhydroxide deposition, reaction of cobalt ions or cobalt oxyhydroxide with the material of the lead-based electrode also occurs at the same time, so that a compound is generated on the electrode, which is known to partially contribute to stabilization of the lead-based electrode, but because divalent cobalt ions to be deposited on the cathode are decreased due to divalent cobalt ions on the anode being consumed through reaction, the side reaction is principally unnecessary if the anode itself has high durability. As an anode for overcoming the above-described disadvantages related to the lead-based electrode, an insoluble electrode is under study which includes a conductive substrate, such as titanium, coated with a catalytic layer containing noble metal or noble metal oxide. For example, Non-Patent Document 1 describes cobalt electrowinning in which an insoluble electrode is used as an anode in a chloride-based electrolyte.

Anode for use in zinc and cobalt electrowinning and electrowinning method

Abstract: The zinc electrowinning anode according to the present invention is a zinc electrowinning anode having an amorphous iridium oxide-containing catalytic layer formed on a conductive substrate, and the zinc electrowinning method according to the present invention is an electrowinning method using that electrowinning anode. Also, the cobalt electrowinning anode according to the present invention is an electrowinning anode having an amorphous iridium oxide or ruthenium oxide-containing catalytic layer formed on a conductive substrate, and the cobalt electrowinning method according to the present invention is an electrowinning method using that electrowinning anode.


According to one aspect, an exemplary method for manufacturing a magnetic head includes forming a plurality of magnetoresistive devices, a reference device, and a monitoring device, where the reference device includes a desired stripe height less than the magnetoresistive devices and monitoring device. Material is removed from the air/tape bearing surface, e.g., by lapping, thereby reducing the stripe height of the magnetoresistive devices and monitoring device. A characteristic of the reference device, e.g., resistance, voltage, or the like, is compared with a similar characteristic of the monitoring device, wherein the characteristic of the monitoring device varies as material is removed. Material may be removed from the bearing surface until the characteristic of the monitoring device and the reference device are substantially equal, at which time, the stripe height of the monitoring device and magnetoresistive devices are substantially equal to that of the reference device.

1. Field
The present invention relates generally to magnetic read/write heads and methods of manufacture, and more particularly to methods of controlling the stripe height of magnetoresistive devices in magnetic read/write heads.
2. Description of the Related Art
Magnetic storage tape continues to be an efficient and effective medium for data storage in computer systems. Increased data storage capacity and retrieval performance is desired of all commercially viable mass storage devices and media. In the case of linear tape recording, a popular trend is toward multi-head, multi-channel fixed head structures with narrowed recording gaps and data track widths so that many linear data tracks may be achieved on a tape medium of a predetermined width, such as one-half inch width tape. To increase the storage density of magnetic tapes and storage systems, transducer elements, e.g., magnetoresistive (MR) elements or devices, on the head and data tracks on the tape are arranged with greater density.
Magnetic tape heads typically include an active device region including raised strips or ridges, commonly referred to as islands, bumps, or rails, that provide a raised tape support or wear surface across which the magnetic tape advances. One or more of these raised islands includes embedded data transducers. The embedded transducers can be either a recording device for writing information to a magnetic tape or a reproducing device for reading information from a magnetic tape. An embedded recording device produces a magnetic field in the vicinity of a small gap in the core of the device, which causes information to be stored on a magnetic tape as the tape advances across the support surface. In contrast, a reproducing device detects a magnetic field from the surface of a magnetic tape as the tape advances over the support surface. Additionally, raised islands may be included without transducers to help support and guide the magnetic tape over the head, generally referred to as outriggers.
Typically, a plurality of embedded transducers are spaced transversely across a direction of tape transport. The transducers may be sized and disposed along an island for varying storage tape data formats, e.g., different numbers of channels, track widths, and track densities. For example, a four channel head includes four read and four write transducers spaced transversely across a tape path. The width of the read/write transducers and the distance between adjacent read/write transducers is associated with the density of tracks to be written to and read from the storage tape. Storage capacity of magnetic tapes are generally increased with the use of smaller more closely positioned read/write transducers in the tape head.
As the storage tape and tape drive industry evolves and achieves increases in storage capacity, the tape head and media designs continue to make changes from one generation to the next. For instance, new data formats with more densely positioned read/write transducer elements on tape heads, more densely positioned tracks on the storage tape, and thinner storage tape increases the storage capacity of storage tape devices. For example, to increase storage capacity of storage tape, the storage tape may be thinned, e.g., lower magnetization thickness (Mrt), while narrowing and thinning the MR devices in the head.
Typical MR devices for use with magnetic recording heads are manufactured using standard semiconductor type processing methods. For example, multiple rows of magnetic recording transducers are deposited simultaneously on wafer substrates and cut into active device regions for incorporation into a magnetic recording head. After a section of magnetic recording transducers are cut from the wafer, they are subject to a lapping process to reduce the stripe heights of the MR devices to a desired height and smooth or polish the surface of the structure. Stripe height is one of the key parameters that control the signal output and device behavior of a magnetoresistive recording head. The stripe height generally determines the sensitivity of the magnetoresistive device to a magnetic field, where a reduction in stripe height typically produces a more sensitive magnetoresistive device. As magnetic recording density increases, scaled down MR devices, e.g., anisotropic magnetoresistive (AMR) or giant magnetoresistive (GMR) devices, are used to achieve adequate signal output. As MR devices scale down, stripe height scales down accordingly.
The desire for shorter stripe height leads to a desire for tighter control of stripe height during manufacturing, which is generally accomplished by mechanical lapping using one or more Electronic Lapping Guides (ELGs). It is generally unwise to use the actual MR devices for monitoring stripe height because of the potential for electrostatic discharge during the lapping process, which may damage the device. In the manufacture of typical multi-channel tape heads on a wafer, for example, a pair of ELGs is disposed at each end of a cluster of MR devices. The ELGs are monitored during manufacturing to determine the stripe height of the active MR devices of the cluster. For example, the lapping process is controlled to cease when the ELG resistance reaches a calculated value associated with a desired stripe height of the MR devices. The calculated ELG resistance, however, is subjected to variations in the geometry and material thickness of the ELG devices, which may result in large cluster-to-cluster stripe height variations.
It is desired to provide tighter control over stripe height during manufacturing, e.g., to provide smaller stripe heights and more densely configured magnetoresistive devices for recording heads.

Methods of manufacturing magnetic heads with reference and monitoring devices


Magnetic tunneling junction devices (MTJ) useful for sensing and memory applications and characterized by reduced resistance, magnetic noise, increased sensitivity, and increased magnetoresistance are disclosed herein. A method for fabrication of said MTJ is also disclosed wherein a series of materials are layered upon a substrate under controlled conditions, patterned and subjected to a period of annealing for simultaneously optimizing a plurality of performance parameters.

This invention relates to magnetic tunnel junction (MTJ) devices and methods for fabrication of MTJ devices having properties of reduced noise, electrical resistance, increased magnetoresistance, and increased magnetic field sensitivity.
The discovery of large magnetoresistance in magnetic tunnel junction devices (MTJs) at room temperature has renewed intensive interest in this type of device. In part, this interest is due to the potential applications in sensitive magnetic sensors and in non-volatile magnetic random access memory (MRAM). The key component in an MTJ device is a sandwich structure (metal/insulator/metal) consisting of two ferromagnetic (FM) metallic layers (top and bottom electrodes) separated by a thin insulating barrier. The barrier is thin enough to allow quantum mechanic tunneling to occur between two ferromagnetic layers. The tunneling resistance of MTJ device depends on the relative orientation of the magnetization vectors (M) in the two FM layers. The magneto-tunneling effect exploits the asymmetry in the density of states of the majority and minority energy bands in a ferromagnet. The larger the asymmetry the larger the spin polarization is, and so the larger the magneto-tunneling effect.
When subject to an external magnetic field, an MTJ device suffers a change in its electrical resistance. The relative resistance change is called magnetoresistance (MR) or the MR ratio, defined as:                                           Δ                                      xe2x80x83                                    R                    R                =                                            R                                            (                H                )                                      -                          R              S                                            R            S                                              (        1        )
where R(H) and Rs are resistance values, at a measurement magnetic field H, and at saturation field, respectively. Beyond the saturation field, resistance remains at a constant value of Rs. The property of MR as defined in relation (1) has been used to sense magnetic field by measuring resistance change in a field. In general, a good magnetoresistive sensor is characterized by a large MR value achieved at a small saturation field. To obtain a large MR ratio, the quality of the tunnel barrier is critically important. The thin insulating barrier should be smooth, pin-hole free, well oxidized, and of proper stoichiometry.
In MTJ devices, when the M vectors are parallel in the two FM electrodes, there is a maximum match between the numbers of occupied electron states in one electrode and available states in the other. The electron tunneling current is at maximum and the tunneling resistance (R) minimum. On the other hand, in the antiparallel configuration, the electron tunneling is between the majority electron states in one electrode and minority states in the other. This mismatch results in a minimum current and a maximum resistance. In a typical MTJ sensor, the M vector of one FM electrode is pinned by an adjacent antiferromagnetic layer via so called xe2x80x9cexchange biasxe2x80x9d coupling effect. The M vector of the other FM electrode is free to rotate. Since an external field can easily alter the direction of this M vector, the tunneling resistance is sensitive to the field to be measured. According to Julliere""s magnetotunneling model, xe2x80x9cTunneling between ferromagnetic filmsxe2x80x9d, Physics Letters, vol. 54A, No.3 (1975), pp.225-226, the maximum MR ratio between parallel and antiparallel configurations is                                                         Δ                                            xe2x80x83                                          R                        R                    =                                                                      R                                      ↑                    ↓                                                  -                                  R                                      ↑                    ↑                                                                              R                                  ↑                  ↑                                                      =                                          2                                                  P                  1                                                                  P                  2                                                            1                -                                                      P                    1                                                                          P                    2                                                                                ,                            (        2        )
where P1 and P2 are the spin-polarization factors of the two electrodes. For a transition ferromagnetic metal (Co, Fe, Ni, and their alloys), P is in the range of 20-40%, leading to xcex94R/Rxcx9c8-38%. For half-metals with a full spin polarization (Pxcx9c100%), the MR ratio can theoretically approach infinity, which is the characteristic of a perfect spin valve.
MTJs offer a set of major advantages as spintronic devices over other magnetic devices such as devices based on anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR). Some of the advantages include, but are not limited to, the following.
The junction resistance (R) of an MTJ can be varied easily over a wide range (10xe2x88x922-108 xcexa9), while keeping the large MR ratio intact. The value of R depends on barrier thickness (txcx9c0.5-2 nm) exponentially and on junction area (A) inversely. The ability to tailor R in MTJ to suit electronics surpasses that in GMR devices.
MTJ can be miniaturized to nanometer size while retaining an adequate resistance, because R is primarily sensitive to barrier thickness. This property, not available in GMR spin-valves, is particularly important for high-resolution field imaging.
MTJ devices can operate in a very large frequency range (0-5 GHz) with good response.
MTJ devices are simple two-terminal resistive devices, requiring only small current density to operate. The stray field generated by the sensing current is small.
MTJ devices have a larger MR ratio. For example, a MR value as high as 49.7% at room temperature has been reported in MTJs with electrodes composed of Co75Fe25, an alloy with a high spin polarization. In contrast, a commercial (Fexe2x80x94Ni)/Cu/Co GMR sensor has a maximum MR of 9%.
One other major advantage of MTJ devices is that the magnetic coupling between the sensing layer and the pinned layer is weak because of the absence of RKKY magnetic interaction that is found in GMR sensors.
When characterizing an MR sensor, many researchers would use the MR ratio as a figure of merit. However, for field-sensing applications, a large MR ratio alone is insufficient. It is the intrinsic noise figure, both magnetic and electric, that determines the ultimate sensor performance. While reductions in noise are critical, and external noise reductions are relatively simple to achieve, control of a sensor""s internal noise is more difficult. Failure to adequately reduce the sensor""s internal noise could impede or swamp detection of small field modulations, regardless of the MR ratio. The field-sensing ability of the MTJ can be complicated by many internal noise sources: Johnson-Nyquiist (limited by resistance and temperature), tunneling current (shot noise), 1/f (two-level systems from defects), Barkhausen (domain-wall movement), and thermal fluctuations in magnetization. For typical sensing and memory applications, it is paramount that the magnetic and electric noise of an MTJ device be reduced as much as possible.
Prior to the present invention disclosed herein, there has been no effort to develop fabrication and post-deposition processes to reduce the noise in MTJ devices. S. Ingvarsson et al., measured the electric and magnetic noise in non-optimized MTJ memory devices but did not include sensor devices. Results were presented in xe2x80x9cElectronic noise in magnetic tunnel junctionsxe2x80x9d, Journal of Applied Physics, vol. 85, page 5270 (1999) and in xe2x80x9cLow frequency magnetic noise in magnetic tunneling junctionsxe2x80x9d, Physical Review Letter, vol. 85, page 3289 (2000). E. R. Nowak, et al., measured the electronic noise in non-optimized MTJ memory (not sensor) devices, but did not evaluate the magnetic noise, as presented in xe2x80x9cNoise properties of ferromagnetic tunnel junctionsxe2x80x9d, Journal of Applied Physics, vol. 84, page 6195 (1998) and in xe2x80x9cElectric noise in hysteretic ferromagnet-insulator-ferromagnet tunnel junctionsxe2x80x9d Applied Physics Letter vol. 74, page 600 (1999). In another electronic noise study, it was claimed that no magnetic noise was observed in the MTJ samples. This study was published by Daniel S. Reed in NVE, in xe2x80x9cLow Frequency Noise in magnetic Tunnel Junctionsxe2x80x9d, IEEE Transactions on Magnetics, vol. 37, page 2028(2001). However, this invention shows that magnetic noise definitely exists in MTJ devices, and represents the dominant source of noise.
Even though MTJ devices have larger MR ratios than AMR or GMR devices, no effort has been made so far to reduce the intrinsic noise of MTJ devices. However, in both sensing and memory applications, low noise levels are a requirement. Various improvements in sensing and memory applications are thus contingent upon the development of improved sensing devices.
The foregoing and other problems are addressed and solved by the teachings in accordance with this invention.
Disclosed herein are low noise, low resistance, high sensitivity, and large magnetoresistance magnetic tunnel junction (MTJ) devices, and methods for fabricating these devices.
The devices produced by the method disclosed herein offer significant improvements in magnetoresistance, resistance, field sensitivity, and noise level over existing devices, as confirmed by structural, magnetic, and transport characterizations. For example, observations have revealed these devices are capable of antiferromagnetic/ferromagnetic interfacial exchange bias fields of 420 Oe and magnetoresistance of up to 38.0%. Linear and non-hysteretic field sensing response has been achieved by providing a moderate hard-axis bias field. Under optimal thermal annealing, intrinsic magnetic noise was reduced to only 1 nT/Hz1/2, which is about 0.0002 of the earth""s magnetic field. Simultaneously, the magnetoresistance and sensitivity are highest at 35% and 5%/Oe.
The MTJ devices are fabricated through a multi-step process. In this process, a series of seven layers are deposited upon a substrate. In a preferred embodiment, the substrate is formed of silicon, and the surface is prepared with thermally oxidized SiO2. Once the substrate has been prepared, the layers are sequentially deposited with the first application being called the buffer layer. Subsequent to the buffer layer, a seed layer is applied, followed by an antiferromagnetic (AFM) layer, a pinned layer, a barrier layer, a free layer, and last of all a passivation layer.
In the preferred embodiment, the layers are deposited sequentially in the order of a thickness of about 30 nm of Pt (as the buffer layer), a thickness of about 3 nm of Ni81Fe19 (seed layer), a thickness of about 13 nm of Fe50Mn50 (AFM layer), a thickness of about 6 nm of Ni81Fe19 (pinned layer), a thickness of about 0.5-2 nm of Al2O3 (barrier layer), a thickness of about 12 nm of Ni81Fe19 (free layer), and a thickness of about 49 nm of Al (passivation layer). These thicknesses, or materials, however, should not be interpreted as limitations upon the practice of this invention.
In the preferred embodiment, the layers are deposited through a process of sputtering with a DC magnetron in a reduced pressure environment while a magnetic field is applied to induce uniaxial anisotropy in the ferromagnetic layers. Deposition occurs at room temperature. The Al2O3 layer is formed by oxidizing a thin layer of Al at an increased pressure for a specific period of time. Once the Al2O3 has been deposited, the pressure is again reduced and the residual oxygen gas is substantially removed from the fabrication area. These steps occur prior to the deposition of the Ni81Fe19 in the free layer. Once the Ni81Fe19 has been sputtered over the Al2O3 layer, an Al passivation layer is deposited to protect the structure from oxidation.
After the process of depositing the layers on the silicon wafer has been completed, the structure is divided into a plurality of appropriately sized segments. In the preferred embodiment, lithography techniques are used to divide the structure into segments appropriately sized for use as MTJ devices. Electrical contacts may conveniently be implanted into the segments during this step of fabrication.
Finally, the segments are annealed under conditions that have been set to optimize the performance of important properties of the MTJ. For instance, optimal temperature for annealing is determined through correlating the MTJ device performance to results from a series of annealings completed at varied temperatures. In this manner, selection of optimal annealing conditions for maximizing performance of an MTJ device is determined.
In the preferred embodiment, the MTJ devices are annealed for approximately ten minutes at a temperature of approximately 168xc2x0 C to 170xc2x0 C.

Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices


The method includes prior to depositing a gate on a first vertical FET on a semiconductor substrate, depositing a first layer on the first vertical FET on the semiconductor substrate. The method further includes prior to depositing a gate on a second vertical FET on the semiconductor substrate, depositing a second layer on the second vertical FET on the semiconductor substrate. The method further includes etching the first layer on the first vertical FET to a lower height than the second layer on the second vertical FET. The method further includes depositing a gate material on both the first vertical FET and the second vertical FET. The method further includes etching the gate material on both the first vertical FET and the second vertical FET to a co-planar height.

The present invention relates generally to the field of semiconductor devices, and more particularly to the formation of modified gate lengths.
The fabrication of semiconductor devices involves forming electronic components in and on semiconductor substrates, such as silicon wafers. These electronic components may include one or more conductive layers, one or more insulation layers, and doped regions formed by implanting various dopants into portions of a semiconductor substrate to achieve specific electrical properties. Semiconductor devices include transistors, resistors, capacitors, and the like, with intermediate and overlying metallization patterns at varying levels, separated by dielectric materials, which interconnect the semiconductor devices to form integrated circuits.
Field-effect transistors (FETs), such as metal-oxide-semiconductor FETs (MOSFETs), are a commonly used semiconductor device. Generally, a FET has three terminals, i.e., a gate structure (or gate stack), a source region, and a drain region. In some instances, the body of the semiconductor may be considered a fourth terminal. The gate stack is a structure used to control output current, i.e., flow of carriers in the channel portion of a FET, through electrical or magnetic fields. The channel portion of the substrate is the region between the source region and the drain region of a semiconductor device that becomes conductive when the semiconductor device is turned on. The source region is a doped region in the semiconductor device from which majority carriers are flowing into the channel portion. The drain region is a doped region in the semiconductor device located at the end of the channel portion, in which carriers are flowing into from the source region via the channel portion and out of the semiconductor device through the drain region. A conductive plug, or contact, is electrically coupled to each terminal. One contact is made to the source region, one contact is made to the drain region, and one contact is made to the gate stack.
A multigate device or multiple gate field-effect transistor (MuGFET) refers to a MOSFET (metal-oxide-semiconductor field-effect transistor) which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a Multiple Independent Gate Field Effect Transistor (MIGFET).

Variable gate lengths for vertical transistors

International Business Machines Corporation


Provided is an energy storage system including: an external power input unit receiving uninterrupted external power; a battery storing electric power; a power adjustment device adjusting the uninterrupted external power and the power of the battery, the battery including a battery module with one or more battery cells; a battery management system; a main switch disposed on a power path between the battery module and the battery management system and a path between the battery module and the power adjustment device; and a wake-up relay receiving a wake-up signal from the power adjustment device and transmitting the wake-up signal to the battery management system.

Recently, there is an increased interest in an Energy Storage System (ESS) that stores and uses power when it is needed.
First, a difference between a battery and an ESS is in that the battery stores the DC power and simply outputs the DC power, but the ESS converts AC into DC and stores it, converts the stored DC into AC and outputs it, and controlling the supply and output of electricity through a PCS.
In other words, the ESS is a system that integrally manages and controls power in linkage with various products such as a PCS, a PMS, and a battery.
On the other hand, the PCS of the ESS may perform a charging function for converting AC into DC when the power is stored in the battery with uninterrupted power supply, and a function of converting the DC power outputted from the battery to AC to discharge it.
In this case, the PSC is always powered when the power is always connected and is driven by the battery power when the power is off.
Meanwhile, the PMS of the ESS may perform the function of managing and integrating one or more ESSs.
Meanwhile, the battery of the ESS further includes a battery management system. When the remaining capacity of the battery becomes less than a predetermined value, the discharge of the battery is cut off, and the battery management system operates in a sleep mode.
When the battery management system operates in the sleep mode, the battery may not be charged even when an external power source is connected to the battery, and the battery may not be discharged to the outside, thereby failing to perform a normal battery function.
In order to activate the battery management system operating in the sleep mode, there is a problem that the user must directly turn on the switch.
Therefore, in the present invention, when the uninterrupted power supply is connected to the ESS, suggested are a device and method for activating a battery management system operating in a sleep mode using a PCS driven with the uninterrupted power supply.

This patent is subject to a terminal disclaimer.

Device and method for preventing over-discharge of energy storage device and re-operating same


The invention relates to a device for optimal coupling of light into a light conductor in an illuminating element in a vehicle rear view device, which comprises a light conductor with a coupling surface. The light conductor is placed at a distance from a TIR lens and a light source of at least one LED. The LED protrudes into a recess of the TIR lens, which includes the LED.

1. Field of the Invention
The invention relates to a device for optimal coupling of light into at least one light conductor in an illuminating element in a vehicle exterior mirror or a vehicle rear view device, such as a camera, with limited installation space in a vehicle.
2. Description of the Related Art
Conventional exterior mirrors have a design allowing the mirror head to be folded backwards in relation to the mirror base, by hand or driven by a motor, in the direction of movement of the vehicle. In addition, the mirror glass bracket can normally be positioned in the mirror head from the inside of the vehicle. A perfect view is thus ensured for the driver, which results in better road safety. Many exterior mirrors comprise an indicator lamp, which is provided on the front side of the mirror housing in the direction of movement. For road users who are next to or behind the exterior mirror, the indicator lamp can generally not be seen, or only insufficiently. Therefore, additional LEDs which radiate along the direction of travel, are used, and are integrated on the outermost edge of the exterior mirror in the indicator.
According to ECE regulations, an additional indicator light in the exterior mirror should light up a region beginning from 5° from the longitudinal axis of the vehicle, up to 60° to the longitudinal axis of the vehicle in the opposite direction of movement. The light intensity in this region, which is regulated by law, is defined in the process and must be achieved.
A variety of solutions for indicators in the exterior mirror is known from the prior art. Here, indicator modules are integrated into the housing of an exterior mirror. According to the design, these indicator modules contain fibre optic cables, reflectors, printed circuit boards, lenses and cover glass and illuminants. LEDs are increasingly used as illuminants due to the known advantages.
In EP 1120312, an exterior mirror with an indicator is known, which comprises a light module, in which a variety of LEDs shine through openings of a reflector. The LED, which is located on the outermost edge of the exterior mirror, has a radiating direction, which corresponds to the legal regulations on the radiation characteristics. The beam-forming is produced by the reflector. The whole light module is clipped into the housing of the exterior mirror, and is electrically contacted by a plug connection. The construction of a lighting module for the indicator is time-consuming and expensive, since a variety of LEDs are attached along an elongated lighting module.
The use of light guide technology lends itself to illuminating an indicator in an exterior rear view mirror, since the installation space in the exterior rear view mirror is limited, and the light emission can be achieved aesthetically with a light conductor, whereby the coupling of the light takes place on an end surface of the light conductor.
EP0858932, for example, is to be named as the prior art, which describes a design of a light conductor in a light module for a mirror indicator. Differing embodiments are also suggested for coupling the light in the light conductor of the mirror indicator. The problem in this process is having enough light available at the end of the light conductor for fulfilling the legal requirements.
So-called TIR (Total Internal Reflection) lenses are also suggested for coupling the light. These TIR lenses comprise a variety of faceted structures, which internally reflect the light, and lead to parallelising the light as a result. A plane, flat light conductor is known in U.S. Pat. No. 5,806,955, into which the light is coupled by several TIR lenses, as well as an elongated light conductor, which comprises a TIR structure on its coupling surface.
US 20080291683 shows a TIR lens, of which the irradiation surface 20 includes and surrounds the dome-shaped lens of an LED. In the process, the TIR lens is attached above the level of the LED, as can also be seen in FIGS. 1 and 1A. In the schematic representation of FIG. 3, the irradiation point is also surrounded by 180 degrees.

Optimal light coupling for rear view devices


Disclosed is an event control method of a mobile terminal, in which when a touch input is detected, a shape and size of a lock screen is changed according to the detected touch input value (e.g., touch time, the number of touch times or touch area) and simultaneously a threshold value necessary for unlocking the lock screen 50 is displayed, and then the lock screen is unlocked and switched to a menu screen when the touch input value reaches the threshold value, resulting in providing a user with more enjoyable and exciting user interface (UI).

1. Field of the Invention
The present invention relates to an event generation in a mobile terminal, and particularly, to an event control method of a mobile terminal which generates a particular event according to a touch threshold value.
2. Background of the Invention
Mobile terminals may be configured to perform various functions, for example, data and voice communication, capturing images or video, storing voice, reproducing music files via a speaker system, displaying images or video and the like. Some of mobile terminals may include an additional function of playing games, and other mobile terminals may be implemented as multimedia players. In addition, in recent time, mobile terminals can receive broadcast or multicast signals to allow viewing of video or television programs.
Furthermore, many efforts are undergoing to support or enhance various functions of such mobile terminals. Such many efforts include not only changes and improvement of structural components implementing a mobile terminal but also software or hardware improvement.
Among others, a touch function of the mobile terminal allows even users, who are not familiar to input buttons or keys, to conveniently operate the mobile terminal using a touch screen. Recently, in addition to a simple touch input, such touch function is being established as an important function of the mobile terminal together with a user interface (UI). Hence, as the touch function is applied to the mobile terminal in more various configurations, whereby development of UIs appropriate for different configurations is further required.

Mobile terminal and event control method thereof


A method for manufacturing an electrical connector is provided. A metal plate is provided, and defines multiple terminals. Each terminal has a base portion and an elastic arm connected to the base portion. A portion of a lower surface of the base portion defines a conducting area. The base portion is cut on the metal plate, thereby forming a cutting slot on the metal plate located at a side edge of the base portion. An insulating body is formed on the metal plate by injection molding, such that the insulating body fills the cutting slot. The insulating body covers only the base portion and not the conducting area and the elastic arm, thereby forming a through hole on the insulating body to expose the elastic arm. Then, the elastic arm is cut on the metal plate, thereby forming a through slot on the metal plate surrounding the elastic arm.

The background description provided herein is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.
An electrical connector includes an insulating body and a plurality of terminals accommodated in the insulating body. Each terminal has a fixing portion used to be fixed to the insulating body; an elastic arm formed by bending upward and extending from the fixing portion, and used to upward elastically abut a mating component, where the insulating body is provided with a through hole to expose the elastic arm; and a soldering portion formed by bending downward and extending from the fixing portion, where the soldering portion is exposed in the insulating body and is used to be soldered to a circuit board. A method for manufacturing the electrical connector includes: firstly, providing a metal plate, and cutting the elastic arm, the fixing portion and the soldering portion of each terminal on the metal plate, such that the metal plate has a through slot surrounding the elastic arm; next, providing a mold, where an upper positioning post and a lower positioning post vertically clamp the elastic arm and cover the through slot, and then injecting a plastic material to the metal plate, thereby forming an insulating body to wrap the metal plate; and then, bending upward the elastic arm, such that the elastic arm protrudes out of the insulating body. However, due to the accuracy being limited, the upper and lower positioning posts may slightly deviate vertically, causing the through slot not to be covered by the positioning posts, thereby allowing the molten plastic material to enter the through slot (which is the molten plastic overflowing). The plastic material, after being solidified, may fix the elastic arm, such that the elastic arm does not easily bend upward, and the elastic characteristics of the elastic arm become worse, causing ill contact between the elastic arm and the mating component. To prevent the molten plastic from overflowing when injecting the plastic material to the metal plate, the positioning posts may pass beyond the through slot with a greater distance along a horizontal direction, thereby causing the through hole to become larger, such that a pitch between the terminals becomes larger, which is not conducive to dense arrangement of the terminals.
Therefore, a heretofore unaddressed need to design a novel method for manufacturing the electrical connector exists in the art to address the aforementioned deficiencies and inadequacies.

Method for manufacturing electrical connector


In order to reduce alignment errors arising in the fabrication of semiconductor integrated circuits using electron beam lithography, enhanced registration marks--(i.e., registration marks that are more easily and accurately detectable by the electron beam)--are formed at the edges of oxide layers, located at the surface of a silicon body, by means of forming metal silicide layers having edges coincident with the edges of the oxide layers. Advantageously, the enhancing of the registgration marks by forming the metal silicide is performed subsequent to any high temperature processing steps, whereby the integrity of the marks is maintained.

Semiconductor ICs typically are fabricated by successively forming patterned layers on a top major surface of a semiconductor wafer body, typically silicon. Each of the layers typically is composed of a metal, insulator, or semiconductor material that has been patterned by a lithographic masking and etching technique suitable for the material. Each lithographic step defines a device level. During the fabrication in this way of ICs containing MOS or bipolar transistor devices, or both, a set of fiducial alignment marks known as registration marks are used. Each such mark has a registration feature. A set of at least three such marks is required per wafer. Each such mark, typically having the shape of a cross when viewed from above, is formed on the surface of the wafer in a dedicated registration mark area thereof. The position of the feature of a registration mark is defined in electron beam lithography as the centroid of the mark, and in other lithographies it is defined as either the centroid or an edge of the mark. The features of these registration marks are then used for aligning the wafer with respect to the lithographic writing tool being used--e.g., optical lithography or electron-beam-IC transistor devices--i.e., the device features located in dedicated device areas--are aligned with respect to the registration marks and hence with respect to one another as desired.
Inherent in every alignment of the position of a device feature with respect to a set of registration marks is an important, non-negligible alignment error, say .+-.e. That is, the distance between a device feature and the relevant feature of the registration mark on a pre-defined level can vary by as much as .+-.e, where e represents a standard deviation, owing to unavoidable imperfections and uncontrollable random variations in the lithographic technique being used. Moreover, in cases where it is necessary to fabricate two different device levels using the same set of registration marks from an earlier level for both device levels, the standard deviation of the total alignment error in the position of one of the features with respect to the other is equal to e.sqroot.2, i.e., an error deviation equal to almost one-and-one-half times the alignment deviation of a signal level. If each level is aligned to registration marks at different levels, the alignment can become progressively worse.
In the fabrication of MOS transistors, for example, a double misalignment problem associated with the respective features of the fabricated field oxide layer and the later fabricated polysilicon gate electrode layer arises if the same earlier set of registration marks is used for aligning both the field oxide and the gate electrode.
In the prior art of optical lithography, the double misalignment problem has been avoided by lithographing the registration marks in the field oxide layer simultaneously while lithographing the field oxide edges of devices being fabricated in the device area; and these registration marks in the field oxide layer are then used for aligning the polysilicon gate electrodes. In this way, since both the registration marks and device feature are on the same lithographic level, there is no misalignment between the edges of the field oxide layer located in the device areas relative to those located in the registration mark area. Subsequent alignment of the polysilicon gate electrode results in only a single alignment error .+-.e, and not a double alignment error e.sqroot.2, between the field oxide edges and the polysilicon gate electrode edges located in the device areas. However, when using lithographic techniques other than optical lithography, such as direct electron-beam-writing lithography--as for the purpose of achieving higher resolutions, for example, 0.3 micrometer feature sizes or less in the gate level--the edge of field oxide, being contiguous with the semiconductor, do not always supply sufficient contrast, with respect to the substrate, to enable detection by the beam of the position of the oxide edge with desired precision. In particular, the edge of the field oxide, especially in the case of thin field oxide, are not accurately determinable by observing the pattern of backscattering, for example, of the electron beam in neighborhoods of these edges. Hence, such a field oxide edge cannot always serve as the desirable precise registration mark, i.e., with the virtually zero misalignment. Thus, in prior art, a lithographic level has been defined solely for the purpose of alignment. Metal or metal silicide registration marks have been used in non-optical lithographies, but at the penalty of double misalignment.

Self aligned registration marks for integrated circuit fabrication


A bicycle lighting apparatus comprises a lighting case structured to be mounted to the bicycle and a lighting element supported by the lighting case. A lighting case mounting unit is disposed on the lighting case and is structured to detachably mount a separate display unit to the lighting case.

The present invention is directed to bicycles and, more particularly, to a bicycle lighting apparatus that can mount a separate display.
Various components are mounted to bicycle handlebars in order to control the operation of the bicycle. Such components include brake levers, transmission control devices such as derailleur operating levers, and headlights for illuminating the road at night. Cycle computers and/or gear indicators also may be mounted to the handlebar in order to electronically control the bicycle transmission and/or to display operating and other information to the rider. A typical cycle computer and/or gear indicator usually comprises a bracket, wherein the bracket is adapted to be mounted to the bicycle handlebar, and a display that is detachably mounted to the bracket.
It is preferable that both the indicator and the headlight be mounted onto the central portion of the handlebar. By so doing, the rider may view the display simply by glancing down slightly while maintaining a forward facing position, and the headlight may illuminate the road directly in front of the rider. Unfortunately, it is difficult to mount both the display and the headlight in the central portion of the handlebar because of the limited space available at that location.
One method of mounting a headlight and a display together is disclosed in German Gebrauchsmusterschrift DE 201 19 499. In this method, a mounting bracket includes a carrier that may be mounted to the handlebar, two arms that extend forward and rearward from the carrier, and a device mounting part at the end of each arm. These device mounting parts are tubular shaped so that a headlight may be strapped to the forward device mounting part, and a cycle computer display may be strapped to the rearward mounting part. As a result, the headlight may illuminate the area directly in front of the bicycle, while the display faces rearwardly toward the rider.
While the above method allows a display and a headlight to be mounted together on the handlebar, the display and the headlight must be separately mounted to the device mounting parts, which can be a cumbersome operation. Also, because the entire structure comprises a number of individual components mounted together, the handlebar tends to have a crowded and cluttered appearance. Also, since the display faces rearwardly, the rider must look down at a significant angle in order to view the display, which can be uncomfortable.

Bicycle lighting apparatus with mountable display


Disclosed herein are a fiber-reinforced plastic composition containing a thermoplastic resin, a reactive rubber (reactor-made thermoplastic poly olefin, RTPO), and a glass fiber; and a fiber-reinforced composite prepared from the fiber-reinforced plastic composition. Furthermore, provided is a method for preparing a fiber-reinforced composite, the method comprising the steps of: preparing a thermoplastic resin composition by feeding a thermoplastic resin and a reactive rubber into a first extruder, followed by melting and kneading; preparing a fiber-reinforced plastic composition by feeding the prepared thermoplastic resin composition and a fiber into a second extruder, followed by kneading; and molding the prepared fiber-reinforced plastic composition to prepare a fiber-reinforced composite.

In general, a fiber-reinforced composite utilizing a thermoplastic polypropylene resin can be formed by impregnating a modified propylene to which a thermoplastic resin comprising a propylene-ethylene copolymer and a polar functional group are grafted and a polyolefin polyol containing a hydroxyl group into a continuous fiber such as glass/carbon. Such composite is excellent in impact resistance as well as in strength and rigidity.
In this case, the impregnation of the thermoplastic resin into the continuous fiber is a factor that gives a significant effect on improving the mechanical properties and impact properties of the long-fiber composite. If the impregnation of the two materials is low, the continuous fibers are not bonded in the thermoplastic resin, and cracks and pores may be formed in the composite, which can in turn adversely affect the physical properties of the composite.
Thus, although a compatibilizer has been used to improve the impregnation of the thermoplastic resin into the continuous fiber, such treatment with the compatibilizer is no longer activated in more than a certain amount. Further, an excessive treatment may adversely affect the physical properties, and has only limited control over the strength, rigidity and impact performance. Therefore, the need for a study of the factors that can enhance the impact performance in addition to the use of the compatibilizer has emerged.

Fiber-reinforced plastic composition, and fiber-reinforced composite with improved impact performance, prepared therefrom


The standard permeation amount of an impurity substance, that is, the permeation amount per unit area of the impurity substance under a standard concentration is calculated from the gas pressures in the gas channels, the impedance, and the fuel cell temperature. The permeation index of the impurity substance at each of locations in the anode-side gas channel is calculated on the basis of the previously calculated value of the concentration distribution of the impurity substance. Then, on the basis of the standard permeation amount and the permeation index, the permeation amounts of the impurity substance at the locations in the anode-side gas channel are calculated. On the basis of a total of the permeation amounts, the amount of the impurity substance accumulated in the anode-side gas channel is calculated. Furthermore, the distribution of existence rate of the impurity substance in the anode-side gas channel is calculated on the basis of the gas pressure in the anode-side gas channel and the electric current value.

1. Field of the Invention
The invention relates to a device that estimates the concentrating distribution of impurities in an anode-side gas channel of a fuel cell that generates electric power by being supplied with a fuel gas on the anode and with air on the cathode.
2. Description of the Related Art
Fuel cell systems that operate with a fuel gas held within an anode-side gas channel in a fuel cell (hereinafter, referred to as the anode dead-end type system) are known as proposed in, for example, Japanese Patent Application Publication No. 2005-353569 (JP-A-2005-353569), Japanese Patent Application Publication No. 2005-327597 (JP-A-2005-327597), Japanese Patent Application Publication No. 2003-317752 (JP-A-2003-317752), Japanese Patent Application Publication No. 2005-353303 (JP-A-2005-353303), Japanese Patent Application Publication No. 9-312167 (JP-A-9-312167), etc. In the anode dead-end type systems, impurity substances, such as nitrogen (N2), water moisture, etc., accumulate in an anode-side gas channel of a fuel cell with the elapse of operation time. If such impurity substances cover the surface of a membrane-electrode assembly (MEA), the electromotive reaction on the electrode catalyst is impeded, resulting in a decline in voltage. Besides, the generated abnormal electric potential may degrade the membrane-electrode assembly (MEA). Therefore, in the related-art anode dead-end type systems, an exhaust valve is opened at an appropriate timing so that the impurity substances accumulated in the anode-side gas channel is exhausted from an end portion downstream of the anode to the outside of the fuel cell system.
In the related-art anode dead-end type system, when the exhaust valve is opened, the fuel gas in the anode-side gas channel as well as the impurity substances is emitted. Therefore, the frequent opening of the exhaust valve brings about degraded fuel economy, and therefore is not preferable. Besides, if the exhaust valve is opened when impurity substances are sufficiently accumulated in a downstream end portion of the anode-side gas channel, the amount of the fuel gas that is wastefully emitted can be correspondingly restrained. Hence, from a viewpoint of improving the fuel economy, it is preferable that the frequency of opening the exhaust valve be restrained as much as possible.
On the other hand, from a viewpoint of maintaining the fuel cell performance, the concentrated accumulation of impurity substances in the downstream end portion of the anode-side gas channel is not preferable. This is because the concentrated accumulation of impurity substances causes decline in the output voltage and degradation of the membrane-electrode assembly as stated above. That is, with regard to the related-art anode dead-end type system, it is demanded to simultaneously accomplish the two contrary tasks, that is, prevention of the decline in the fuel cell performance resulting from accumulation of impurity substances, and the improvement of the fuel economy by restraining the amount of emission of the fuel gas.
However, it is not easy to fulfill the foregoing requirements in the related-art anode dead-end type system. In order to fulfill the requirements, it is necessary to open the exhaust valve according to the situation of accumulation of impurity substances in the downstream end portion of the anode-side gas channel. However, a method for accurately estimating the situation of the accumulation has not bee established. Besides, the estimation of the situation of the accumulation demanded herein is not a mere estimation of the amount of accumulation of impurity substances. In order to reliably emit impurity substances while preventing wasteful emission of the fuel gas, it becomes necessary to estimate where in the anode-side gas channel impurity substances exist and what amount of impurity substances exist, that is, to estimate the concentration distribution of impurity substances in the anode-side gas channel.

Concentration distribution estimation device for impurity in anode side, and fuel cell system using the device


The present disclosure relates to methods for treating deactivated SCR catalysts having an increased SO2/SO3 conversion rate as a result of the accumulation of one or more iron compounds. The methods are characterized in that the catalysts are treated with an aqueous solution of an acidic reactive salt or hydrogen fluoride, with the addition of at least one antioxidant.

High temperature thermal processes, for example, generation of steam for the production of electricity in power plants utilizing fossil fuels, often create environmentally harmful by-products. These compounds, including nitrogen oxides (NOx) and sulfur dioxide (SO2) must be removed from the flue gases of the high temperature thermal processes before the gases are discharged into the environment, for example before exiting the power plant and contacting the environment.
Desulphurization of the flue gas, for example removal of SO2, may be carried out by applying known methods in which the SO2 produced in the combustion process is oxidized to SO3. This is done prior to exposure of the flue gases to the reduction catalyst. The SO3 may then be absorbed into alkaline solution and removed from the process, usually in the form of gypsum.
The standard for removing nitrogen oxides from flue gases is the selective catalytic reduction (SCR) process, where a reducing agent, typically ammonia, is injected and mixed into the flue gases, and sent through a catalytic reaction chamber where the catalyst facilitates the reduction of NO by the reducing agent to form elemental nitrogen (N2) and water.
One undesired side reaction between the SCR catalyst and the constituents of the flue gas is the conversion of remaining SO2 to SO3. For example, the SO2 remaining in the flue gas may be partially oxidized to SO3, which may then react with water in the flue gas to produce sulfuric acid (H2SO4). Sulfuric acid in the flue gas stream may result in corrosion of steel surfaces, for example surfaces below the dew point of the sulfuric acid, in equipment downstream of the catalyst. In addition, emission of H2SO4 aerosol particles into the atmosphere may also be undesired for environmental reasons.
The catalysts, which in certain embodiments are referred to as DeNOx catalysts, may be constructed of titanium dioxide containing the oxides of transition metals, such as, for example, vanadium, molybdenum, and tungsten, to act as catalytically active components. In specific embodiments, the catalysts may be arranged on plates, in honeycomb fashion, or as a corrugated structure and are generally placed parallel to the direction of the flow of the flue gas. However, during operation of the power plant, the catalyst undergoes a loss of activity and efficiency, for example, due to plugging with fly ash and/or deactivation of the active components by certain compounds contained in the flue gas. Among these compounds are, for example, sodium (Na), potassium (K), arsenic (As), and phosphorous (P) based salts, as well as other compounds.
In addition to these compounds, iron compounds and/or iron salts may physically and chemically bond to the catalyst surface further reducing the performance of the catalyst. Research suggests that iron ions may be the main cause of the enhanced and undesired conversion of SO2 to SO3 during the regular operation of the SCR catalyst in the power plant. Iron contamination may come from a variety of sources, including the fuel burned in the power plant. For example, depending on the origin and age of coal, the natural iron content may range from about 5% to about 8% by weight, relative to the total amount of the mineral components in the coal.
It is generally known that during the regeneration of SCR catalysts, inorganic acids, such as sulfuric acid (H2SO4) and hydrochloric acid (HCl), may be used to clean and restore the catalyst, such as by a soaking step and a neutralizing step. Inorganic acids are typically odorless, which is another advantage to their use. Sulfuric acid, in particular, is relatively inexpensive and commercially available. In addition, sulfuric acid is also used because SO2 and SO3 may also be present in the flue gas and collected by the catalyst during operation in the power plant facility and when a catalyst is submerged in water or another aqueous solution, the SO2 or SO3 is removed from the catalyst and forms a diluted sulfuric acid solution. However, treating a catalyst with sulfuric acid has disadvantages since the H2SO4 in a diluted aqueous solution also corrodes the steel casings of the catalyst. Corrosion of the catalyst casings may also result in release of water soluble iron compounds that can penetrate the pores of the SCR catalyst, further enhancing the undesired SO2 to SO3 conversion process.
The removal of iron contaminants from a DeNOx catalyst has been described in U.S. Pat. No. 7,569,506 in which the catalyst is placed in a reaction solution comprising an aqueous solution of an inorganic or organic acid with the addition of one or more antioxidants. Inorganic acids, namely hydrochloric acid, phosphorus acid, nitric acid, and, in particular, sulfuric acid, are described. Organic acids, such as relatively strong organic acids, including oxalic acid, citric acid, malonic acid, formic acid, chloroacetic acid, and benzole sulfonic acid were also used. Although the methods described in this reference were effective in removing iron accumulation on the catalyst, the strong acids described in the reference also liberated iron ions from steel substrates and the steel casings of the catalyst. These iron ions can then penetrate the pores of the catalyst, potentially enhancing the undesired SO2 to SO3 conversion.
Thus, there is a need for alternative methods for regeneration of SCR catalysts to remove or minimize contamination by iron compounds and provide optimum DeNOx performance of the catalyst while minimizing or reducing the SO2 to SO3 conversion process within the flue gas stream.

Method for treating SCR catalysts having accumulated iron compounds


An autofunction control system for motor vehicles comprising an engine, a transmission and an accelerator, the position of the accelerator defining a set ERPM, the system configured to define a desired percentage of maximum available power for each set ERPM, the system configured to control the transmission ratio of the transmission to load the engine at least to the desired percentage of power, wherein the desired percentage of power is a function of the set ERPM when the set ERPM is between a low threshold and a high threshold, and wherein the system is configured to control the transmission ratio to load the engine closest to the maximum available absolute power for the engine for a set ERPM above the high threshold ERPM.

An existing automatic transmission system created by the Applicant involves the use of fixed thresholds, which are however hardly adaptable to all driving and environmental conditions. A poor reactivity, a certain instability of the target gear ratio and low performances with regard to the usable power can be mentioned among the most relevant drawbacks of this prior art system.
Therefore, the main object of the present invention is keeping the tractor engine as close as possible to an appropriate percentage of power at a given setting of the accelerator. In the present invention, if based on the engine requested RPM, the percentage is chosen to maintain the power to an optimal value and, at the same time, to provide for a quality driving experience.
The autofunction control system for motor vehicles is able to control the transmission ratio of the gearbox by means of a continuous adjustment of the transmission ratio for continuously variable transmissions, or by increasing/decreasing the gears for discrete-ratio transmissions.
The progress of the desired power starts from a low percentage at a low RPM up to 100% of power at high speed. Moreover, the percentage of power is affected by the position of the brake pedal. In this way, the system follows the operator's driving style to modify the percentage of power.
Therefore, according to the present invention, it is provided an autofunction control system for motor vehicles according to what stated in the enclosed independent claim, and preferably, in any of the claims directly or indirectly dependent on the aforesaid independent claim.

Autofunction control system for motor vehicles


A semiconductor laser unit includes a plurality of semiconductor laser elements arranged parallel with one another in a laser beam-emitting direction, and a base for positioning and fixing the plurality of semiconductor laser elements. The plurality of semiconductor laser elements are arranged such that a laser beam emitted from the semiconductor laser element greatest in astigmatism, of the plurality of semiconductor laser elements, is coincident in its axis with a reference axis of the base. In the case that the semiconductor laser unit is arranged on an optical head device, the focusing characteristic on the plurality of laser beams can be improved.

1. Technical Field of the Invention
This invention relates to a semiconductor laser unit capable of emitting a plurality of laser beams and an optical head device equipped therewith, and more particularly to a semiconductor laser unit and optical head device improved in the focusing characteristic on the plurality of laser beams.
2. Description of the Related Art
An optical head device has been widely used for recording to or reproducing from an optical disk such as a DVD (Digital Versatile Disc), a CD (Compact Disc) or the like. An optical head device 100 shown in FIG. 10, which is a conventional example, is equipped with a conventional semiconductor laser unit 101 capable of emitting a plurality of laser beams, so-called a multi-beam semiconductor laser unit. A half mirror 102 is arranged on a light-emission side of the semiconductor laser unit 101. A collimator lens 103 and an objective lens 104 are arranged in the order on a light-reflection side of the half mirror 102. At or around a focal spot of the objective lens 104, an optical disk 105 or 106 is arranged to record thereto or reproduce therefrom. Herein, the optical disk 105 is, for example, a DVD which is small in protection layer thickness, while the optical disk 106 is, for example, a CD which is greater in protection layer thickness than a DVD. A photo-detector 107 is arranged on a light-transmission side of the half mirror 102 as viewed from the collimator lens 103.
The semiconductor laser unit 101 used on the optical head device 100 includes a unit shown in JP-A-2001-298238, hereinafter referred to as a first background art. The semiconductor laser unit 101 shown in FIG. 11 as the first background art includes a case 108, a heat block 109 attached on the case 108, a sub-mount 110 arranged on the heat block 109, and a multi-beam semiconductor laser unit 111 arranged on the sub-mount 110. The multi-beam semiconductor laser unit 111 has light-emission points 112 and 113 spaced by approximately 100 microns. The first light-emission point 112 which emits a shorter laser beam in wavelength than the second light-emission point 113 is in a center of an outer shape of the case 108. The semiconductor laser unit 101 is arranged on the optical head device 100 such that the laser beam emitted from the first light-emission point 112 is coincident in its axis with an optical axis 114 of the collimator lens 103 and the objective lens 104 shown in FIG. 10. For example, the light-emission points 112 and 113 emit laser-beams at a wavelength of 650 nm for recording to or reproducing from DVD and at a wavelength of 780 nm for recording to or reproducing from CD, respectively.
The laser beam, emitted from the first light-emission point 112 of the semiconductor laser unit 101 shown in FIG. 11, is reflected upon the half mirror 102 shown in FIG. 10, followed by entering the collimator lens 103 where it is converted into a collimated laser beam. Thereafter, this enters the objective lens 104 and is focused onto the optical disk 105. The laser beam reflected upon the optical disk 105 travels through a reverse optical path to pass through the half mirror 102, followed by being irradiated onto the photo-detector 107. In the photo-detector 107, detected are the reproduced signals from the optical disk 105 and the signals required for focusing and tracking. Similarly, the laser beam, emitted from the second light-emission point 113 of the semiconductor laser unit 101, is focused onto the other optical disk 106. In the photo-detector 107, detected are the reproduced signals from the optical disk 106 and the signals required for focusing and tracking.
As for the first light-emission point 112, high-performance focusing characteristic is available without influence of an aberration of the collimator lens 103 and objective lens 104, because the axis of the laser beam emitted from the first light-emission point 112 exists on an optical axis 114. On the other hand, as for the second light-emission point 113, because the axis of the laser beam emitted therefrom dose not exist on the optical axis 114, incidence is oblique on the collimator lens 103 and objective lens 104, thus being unavoidably influenced by an aberration. However, a CD, irradiated by a laser beam longer in wavelength emitted from the second light-emission point 113, has a greater margin than a DVD in respect of wavelength and lens focusing performance, and therefore, there is no significant trouble in practical operation.
JP-A-2002-25103, a second background art, discloses a similar optical head device to the first background art. This shows that, in mounting a semiconductor laser unit having two light-emission points for emitting laser beams of different wavelengths on an optical head device 100, a light-emission point emitting a laser beam of a shorter wavelength (first light-emission point 112) is coincident on an optical axis 114 or arranged so that a distance between the light-emission point emitting a laser beam of a shorter wavelength (first light-emission point 112) and the optical axis 114 may be shorter than a distance between the light-emission point emitting a laser beam of a longer wavelength (second light-emission point 113) and the optical axis 114. In this case, similarly to the first background art, the light-emission point emitting a laser beam of a shorter wavelength (first light-emission point 112) is arranged to a position close to the optical axis 114 with priority over the light-emission point emitting a laser beam of a longer wavelength (second light-emission point 113), because it is readily influenced by an aberration of the collimator lens 103 and the objective lens 104.
In the meanwhile, in the optical head device 100, an astigmatism generally exists on the multi-beam semiconductor laser unit 111 besides the aberration resulting from a positional relationship between the lens system (herein, collimator lens 103 and objective lens 104) and the light-emission point. The astigmatism is preferably suppressed to a possible small extent because it also has an effect upon a focusing characteristic.
JP-A-2000-251314, a third background art, discloses a conventional optical head device shown in FIG. 12, in which references 100 to 107 and reference 114 are the same as those shown in FIG. 10. An astigmatism compensating plate 115 is arranged on an optical path between a semiconductor laser unit 101 and a half mirror 102. The astigmatism compensating plate 115 is in the form of a parallel plate formed of a transparent optical member, such as glass or resin. As shown in FIG. 13, the plane formed by the axes 116 and 117 of the laser beams emitted from two light-emission points 112 and 113, respectively, is on the same plane (X-Z plane in FIG. 13) as the normal line of an incidence surface of the astigmatism compensating plate 115. Also, the astigmatism compensating plate 115 is arranged inclined relative to the plane formed by the axes 116 and 117 of the laser beams.
It is apparent that, in case a divergently emitting laser beam transmits through the parallel-plated astigmatism compensating plate 115 arranged with inclination relative to the axes 116, 117, an astigmatism occurs in the laser beam. The amount of astigmatism occurrence is influenced to a refractive index of an optical member structuring the astigmatism compensating plate 115, parallel plate thickness and an inclination angle in arrangement the astigmatism compensating plate 115. In the case that an astigmatism already exists in the laser beam entering the astigmatism compensating plate 115, added thereto is an astigmatism caused due to the transmission through the astigmatism compensating plate 115. Therefore, a refractive index, thickness and inclination angle of the astigmatism compensating plate 115 are set in a manner to give an astigmatism reverse in direction to and same in magnitude as the amount of the astigmatism existing in the laser beam entering the astigmatism compensating plate 115, so that the astigmatism can be suppressed in the laser beam after transmitted through the astigmatism compensating plate 115. As noted above, because the astigmatism generally exists on the multi-beam semiconductor laser unit 111 itself, it is very effective to adopt such an astigmatism compensating plate 115.
Furthermore, the astigmatism compensating plate 115 applied to the multi-beam semiconductor laser unit 111 also has an effect shown in JP-A-2001-237501, a fourth background art. Namely, for the laser beams different in wavelength emitted from light-emission points 112 and 113, their axes 116 and 117, are refracted at both the incident and exit surfaces of the astigmatism compensating plate 115. Generally, the refractive index of an optical member depends on a wavelength, i.e. increases with decrease in wavelength. Accordingly, the laser beam 116 shorter in wavelength undergoes greater refractive action to have a greater parallel shift amount in the laser beam axis 116 before entering and after exiting from the astigmatism compensating plate 115 than that in the axis 117 of the laser beam longer in wavelength. As shown in FIG. 13, in the case that the astigmatism compensating plate 115 is arranged with inclination in a manner nearing the light-emission point 113 for emitting a laser beam of longer wavelength, the distance B between the axes 116 and 117 of the two laser beams after exiting from the astigmatism compensating plate 115 is smaller than the distance A between the axes 116 and 117 of the two laser beams before entering the astigmatism compensating plate 115. Conversely, in the case that the astigmatism compensating plate 115 is arranged with inclination in a manner nearing the light-emission point 112 for emitting a laser beam of shorter wavelength, the distance B between the axes 116 and 117 of the two laser beams after exiting from the astigmatism compensating plate 115 is greater than the distance A between the axes 116 and 117 of the two laser beams before entering the astigmatism compensating plate 115. In this manner, the distance between the axes 116 and 117 of the two laser beams can be varied to entering and exiting from the astigmatism compensating plate 115 by changing the inclination angle of the astigmatism compensating plate 115. It is accordingly possible to freely adjust a positional relationship between the two light-emission points 112, 113 and the optical axis 114.
However, the conventional semiconductor laser unit 101 and the optical head device 100 equipped therewith have involved the following problems.
In the first and second background arts, the light-emission point 112 for emitting a laser beam shorter in wavelength is arranged on or close to the optical axis 114 in order to preferentially secure the focusing performance, for example, for the DVD strict in aberration condition as compared to the CD. However, there is a problem of sacrificing the focusing performance on a laser beam longer in wavelength emitted from the light-emission point 113.
Meanwhile, the third background art is structured such that the astigmatism existing on the two light-emission points 112, 113 of the multi-beam semiconductor laser unit 111 is compensated by the use of the astigmatism compensating plate 115. Accordingly, in the case that the two light-emission points 112, 113 emit laser beams of the same wavelength and have the same astigmatism each other, compensation can be easily made on the two light-emission points 112, 113. However, where the two light-emission points 112, 113 emit laser beams different in wavelength, they do not necessarily have the same amount of astigmatism, because the materials structuring the light-emission points 112, 113 of the multi-beam semiconductor laser unit 111 are different. Accordingly, there is difficulty in simultaneously compensating the astigmatisms on the two light-emission points 112, 113 where there is difference in the astigmatisms. Thus, further required is means for securing a focusing performance on a light-emission point more insufficient of compensation among the two light-emission points.
Meanwhile, in the fourth background art, the astigmatism compensating plate 115 is arbitrarily inclined to adjust to a desired value the distance B between the axes 116 and 117 of the two laser beams after transmitting through the astigmatism compensating plate 115. However, there occurs variation in the amount of astigmatism of the laser beam after transmitting through the astigmatism compensating plate 115 due to the inclination angle of the astigmatism compensating plate 115. Thus, there is a problem that much time is required in measuring a distance B or in an adjusting process for the astigmatism compensating plate 115.
Furthermore, the first to fourth background arts, in any, merely explain to obtain the optimal focusing characteristic on the optical axis 114 of the collimator lens 103 and the objective lens 104 of the optical head device 100, but are silent in the relationship with a focusing characteristic including an astigmatism occurring on the above lens system. Accordingly, in the viewpoint of strict optical design, there is a problem that structuring is not made to simultaneously optimize the focusing characteristic on the two laser beams.

Semiconductor laser unit and optical head device


A time-of-flight (TOF) camera system includes a radiation source, a radiation detector, a location sensor system and a processor. The radiation source is configured to generate and emit a radiation that strikes a target object. The radiation detector is configured to detect the radiation reflected from the target object and generate a sample set comprising at least two raw samples detected in succession at different times based on the reflected radiation. The location sensor system is configured to detect movements of the TOF camera during the detection and generate a movement signal having portions thereof uniquely corresponding to each of the raw samples of the sample set based on the movements of the TOF camera, wherein a portion of the movement signal is detected at a same time of generating the corresponding raw sample. The processor is configured to receive the raw samples and the corresponding movement signal portions and generate an object information based on the raw samples and the corresponding movement signal portion.

A time-of-flight (TOF) camera is a compact sensor that provides depth and reflectance measurements at a relative high frame rate. By processing the measured depth and reflectance information for sufficient pixels of a target object, a three-dimensional (3D) image of the target object is acquired.
Relative movements between the camera and the target object affect the quality of the acquired 3D image of the target object. The pixels are mixed up due to the relative movements. Further, the relative movements affect, and sometimes invalidate the measured depth and reflectance information of a single pixel of the target object. This is because, for the TOF camera, the depth and reflectance information of a single pixel are usually acquired by processing a few raw samples taken in succession at different times.

Time-of-flight camera with location sensor system


A composition for use as material for electrical or electronic parts, comprising (A) a vinyl polymer having, at a molecular terminal thereof, at least one (meth)acryloyl group per molecule of the polymer, (B) a vinyl monomer having a (meth)acryloyl group and (C) an initiator, wherein the component (B) is comprised in an amount of from 25% by weight or more to 45% by weight or less to the total 100% by weight of the components (A) and (B).

As compositions for electrical or electronic part material, various curable resins are used for a wide range of uses. For example, epoxy resin, imide resin, amideimide resin, unsaturated polyester resin, phenolic resin and other curable resins are used for: semiconductor-sealing resin; impregnating resin for spinning, electrically insulating varnish; insulating material for a printed wiring board; impregnating resin for a printed wiring board; a coating agent for an electronic component; a conformal coating article; a potting agent for an electronic component; an adhesive for an electrical or electronic component; a compound for radiating heat from an electronic component; and the like. However, these resins have, for example, problems that cured products of the resins are hard, and the products cause the bonding wires to be cut because of a difference in linear expansion coefficient therebetween, and produce other bad effects. As a polymer which gives a rubbery curable resin and does not have these problems, known are, for example, silicone polymer, polyether polymer, hydrocarbon polymer, vinyl polymer and the like that are each a polymer having a hydroxyl group or a hydrolyzable group bonded to a silicon atom, and having at least one silicon-containing group which is to form a siloxane bond to be crosslinkable (hereinafter, the silicon-containing group may be referred to as the crosslinkable silyl group). The curing of these polymers is characterized in that heating is not necessarily required for the curing since the curing is based on the condensation reaction of the crosslinkable silyl groups, but has common problems, for example, slow curing speed, insufficient depth-curability and the like.
As polymers without these problems, silicone, polyether and hydrocarbon polymers have been suggested. The silicone polymers have problems about electrical properties thereof (see Patent document 1); thus, for example, a low-molecular-weight silicone compound present in the cure product causes an electrical contact-point hindrance. The polyether polymers, and unsaturated ones of the hydrocarbon polymers may be poor in heat resistance. Saturated ones of the hydrocarbon polymers themselves are high in viscosity to cause a problem about handleability. The inventors reported polymers whose main chains are vinyl polymers obtained by living radical polymerization and which respectively have at a terminal thereof a (meth)acryloyl group (Patent documents 2 to 4). Although cured products of these polymers are excellent in, for example, heat resistance and oil resistance, the products have problems about electrical insulation, and resistance to discoloration of electrodes. Thus, the products may not be used for sealing electrical members, or as adhesives.

Composition for use as material for electrical or electronic parts, and cured product thereof