An edge detection apparatus includes a computing circuit and a determining circuit. The computing circuit includes a first multiplier block and a first adder unit. The first multiplier block includes n×m first multiplier units, wherein each first multiplier unit has a first multiplication factor. The n×m first multiplier units respectively perform multiplications on n×m pixels which are arranged as an n×m matrix to generate n×m first product values based on the corresponding first multiplication factors. The n×m pixels include a target pixel, where n is not equal to m. The first adder unit generates a first computation result according to the n×m first product values. The determining circuit determines if the target pixel is an edge pixel according to at least the first computation result.

1. Field of the Invention
The present invention relates to edge detection, and more specifically, to an edge detection apparatus for detecting a Bayer pattern and a computing circuit employed in the edge detection apparatus.
2. Description of the Prior Art
Bayer pattern color filter arrays are widely applied to image sensors of image-capturing devices for filtering color information of light emitted from the captured object. Please refer to FIG. 1. FIG. 1 is a color filter arrangement diagram of a Bayer pattern color filter array 10. The Bayer pattern color filter array 10 includes a plurality of patterns 12 arrayed in a matrix. Each pattern 12 includes three kinds of color filters arrayed in a 2×2 matrix. The three kinds of color filters are a red color filter, a blue color filter, and a green color filter. As shown in FIG. 1, "R" symbolizes the red color filter, "G" symbolizes the green color filter, and "B" symbolizes the blue color filter. Each pattern 12 comprises one red color filter, one blue color filter, and two green color filters based on the fact that the human visual system is more sensitive to the green color information than to the red and blue information. The two green color filters are positioned in a diagonal configuration instead of being positioned close to each other. The red color filter and the blue color filter are therefore also positioned in a diagonal configuration.
The imaging system obtains raw sensory data having less color samples per pixel because it ignores the other two color components for each pixel. Since each filter of the color filter array covers a single pixel and only allows a color in a specific spectral band to pass, before the scene image is further processed or displayed, the missing colors of each image pixel must be reconstructed so that each image pixel contains all three color components. The conventional color interpolation method uses replication of the values of the nearest neighboring image pixels, or alternatively uses linear or logarithmic averaging techniques for obtaining an average value of the neighboring image pixels for reconstructing the missing color. The color interpolation process to convert raw sensory image data into a full color image by estimating the missing color components of each image pixel from its neighboring image pixels is well known to those skilled in the art as "demosaicing". Due to the aliasing effects caused by averaging (low-pass filtering) pixel values across the edges, most demosaicing approaches often introduce image effect problems, such as zipper effects, false colors, or blurred edges of the image where there are dense edges.
In order to solve the above-mentioned problems, the conventional approach performs an edge detection upon the image, where the edge detection is utilized for determining if a pixel corresponds to the edge of the image, and for determining the edge direction and the degree of the edge variation, and then performs interpolation according to the detecting result. For a Bayer pattern, the edge detection filter needs to generate constant detecting results when the detected pixels are moved along the edge direction, therefore, many edge detection filters are not suitable for the Bayer pattern. A Sobel filter is one kind of filter utilized for Bayer pattern edge detecting, which can determine whether a pixel corresponds to a horizontal edge or a vertical edge. Generally, the Sobel filter can determine the edge directions correctly; however, the Sobel filter might determine a wrong direction in a case where noise of the detected image is significant; moreover, the Sobel filter might fail to correctly determine the edge in the slightly blurred region. In an image scaling operation, a reliable edge detection approach is required to improve the scaled image quality. Thus, there is a need for increasing the accuracy and reliability of edge detection.

Edge detection apparatus and computing circuit employed in edge detection apparatus


An input apparatus capable of receiving inputs of a plurality of levels in accordance with pressed area varied in each operation by an operator is provided. An input apparatus 10 configured to receive the inputs of a plurality of levels in accordance with the pressed area has a area detection unit 40 configured to detect a pressed area of a pressing input and a control unit 20 configured to control to set a second standard area for receiving a second level input every time the area detection unit 40 detects the pressed area satisfying a first standard area for receiving a first level input.

Conventionally, for a variety of electronic devices including mobile phones, gaming machines and digital cameras, a mechanical switch, such as a tact switch or a membrane switch, is used in general as an input apparatus allowing an operator to perform input operations. These days, small terminal devices are often equipped with various functions, and such terminal devices have keys and buttons constituted by various switches on a body surface thereof.
In general, such a switch is assigned one operation (or one program). For example, the mobile phone outputs a number corresponding to the key upon detection of a pressing input to a numerical keypad and displays a menu panel upon detection of the pressing input to a menu key.
However, if an operator carries out a plurality of operations in series with each of different switches assigned respective operations, it may result in a substantially troublesome task. It may be considered to set such that a plurality of operations are sequentially carried out with a single switch every time an input to the switch is detected, such an input method requires predefinition of an order of the operations. Therefore, an operation of immediate execution of arbitrary operations desired by the operator is not enabled.
In order to address such a problem described above, there has been suggested an input apparatus with a plurality of operations assigned to an input mode to one switch (for example, see Patent Document 1).
The input apparatus described in Patent Document 1 can receive inputs at two levels in accordance with operation force (a pressure load) applied by the input operation.
FIG. 8 is a cross-sectional view schematically illustrating an internal configuration of an operation apparatus 100 described in Patent Document 1. As illustrated in FIG. 8, the operation apparatus 100 has a first detection means 200 and a second detection means 300, both of which are constituted by the membrane switch. The second detection means 300 is arranged under (in a pressing direction) the first detection means 200. A portion to be in direct contact with a finger F of the operator is made of a flexible member, which bends when the operator presses the operation apparatus 100 and thereby conveys the pressure to the first detection means 200. When the operator presses down a position corresponding to a first contact point S3 applying a light weight (first operation force) with the finger F, a first upper conductive portion 201c and a first lower conductive portion 202c come into contact with each other, and thereby the first contact point S3 is conducted. This is defined as a first level input. Further, when the finger F presses down applying a heavier weight (second operation force), a second upper conductive portion 301c and a second lower conductive portion 302c come into contact with each other, and thereby a second contact point T3 is conducted. This is defined as a second level input. FIG. 8 illustrates a state that not only the first contact point S3 detects the first level input but also the second contact point T3 detects the second level input as the operator's finger F presses the operation apparatus 100 applies the second operation force.
Since the input apparatus described above receives inputs at two levels in accordance with the pressure of the operator's input, different operation may be assigned to each of the levels. With such an input apparatus, the operator can separately carry out a plurality of inputs by adjusting a pressure of one pressing input to one switch (input apparatus).
That is, the input apparatus for receiving inputs at two levels enables the operator to carry out the first level input by maintaining light pressure on the button. This input state is called "halfway pressing", and referred to as the "first level input" hereinafter. This input apparatus also enables the operator to carry out the second level input by pressing the button with pressure heavier than that of the first level input. This input state is called "full pressing", and referred to as the "second level input" hereinafter.
As an example of typical usages of the input apparatus for receiving the inputs at two levels in accordance with the pressure by such a mechanical switch, there is a shutter button of a camera. In general, for the mobile phones and the like having a digital camera function, the "halfway pressing" for the first level input by the operator turns on functions for adjusting AE (Auto Exposure) or for adjusting AF (Auto Focus). If the operator carries out the "full pressing" for the second level input in this state, the shutter is released. As described above, it is possible to assign different operations to the first level input and the second level input and, in addition, the operator can separately operate the different operations as desired.
It is to be noted that the input apparatus for receiving inputs of a plurality of levels in accordance with the pressure is not limited to the mechanical switch. For example, there is suggested an input apparatus of a touch panel type, composed of a combination of a display unit and a position input device, for receiving inputs of a plurality of levels in accordance with the pressure by software processing (for example, see Patent Document 2).
The input apparatus of the touch panel type described in Patent Document 2 has a position detection means for detecting a position of a pressing operation on the touch panel provided on a surface portion of a displayed screen and a pressure detection means for detecting a pressure applied on the touch panel. This input apparatus enables inputs of two systems in one pressing operation to the touch panel: an input in accordance with a position detected by the position detection means and multi-level inputs in accordance with the pressure detected by the pressure detection means.
This input apparatus allows the operator to simultaneously carry out an input of a first system in accordance with a position of the pressing operation and an input of a second system in accordance with a pressure on the touch panel, in pressing operation to the touch panel on the displayed screen. At this time, selection is enabled on multiple levels, i.e., three or more levels, in accordance with the pressure on the touch panel. Accordingly, the operator can carry out the input of the two systems in one pressing operation to the touch panel, which enables reduction in the number of pressing operations.
As stated above, both of the input apparatus using the mechanical switch and the input apparatus using the touch panel can receive inputs of a plurality of levels in accordance with the pressure. Since those input apparatuses receive the input classifying into a plurality of levels in accordance with the pressure, a plurality of functions are collected to one button or key. Thereby, it is possible to reduce the number of keys and buttons serving for input operations. Especially for small terminals such as the mobile terminals, there is a difficulty in arranging numerous keys and buttons on their bodies due to their housings in small sizes. Accordingly, if the mobile terminal can separately perform a plurality of functions with a small number of keys and buttons, the number of keys and buttons to be provided on the terminal body is advantageously reduced.


A vented fuel tank cap and valve assembly is described having a cam actuated connector for connecting the cap to the top of the filler neck tube for the tank. Three vent passages are employed in the cap with common outlet openings. One passage is normally open but includes a float valve which can close such passage when the vehicle tips. A second passage includes a pressure relief valve which opens when the tank pressure exceeds a predetermined pressure. The bias spring for the pressure relief valve also functions as the bias for the cam actuated connector. The third passage includes fusible metal inserts provided in the movable pressure relief valve member to open such passage when the temperature of the tank exceeds the melting point of such inserts. The cam actuated connector includes ramp shaped cam surfaces on the outside of the filler neck tube and cam follower pins on the tank cap which move along the ramps and are urged into locking notches by a coil spring which also operates the pressure relief valve.

The present invention relates generally to a liquid tank filler cap and valve assembly, and in particular to a vented fuel tank cap having plurality of vent passages which discharge through common outlet openings and which is attached to the filler tube of the fuel tank by a cam actuated connector. The cam actuated connector includes a ramp-shaped cam surface with a locking notch that is engaged by a cam follower pin in the closed position of the cap to provide a positive indicator that the cap is completely closed to prevent fuel leakage. The fuel tank cap is especially useful for vehicles such as diesel engine trucks and the like. Such cap vents fumes from the tank through a first passage which is normally open but contains a float valve which closes for preventing liquid fuel from spilling in the tank when it tips beyond a predetermined angle of inclination, through a second passage including a pressure relief valve which opens when the pressure within the tank exceeds a predetermined pressure, and through a third passage including fusible metal plugs, which melt to vent the tank above a predetermined temperature such as might be encountered in a fire.
It has been previously proposed in U.S. Pat. No. 4,796,777 of Russell D. Keller, the present inventor, issued Jan. 10, 1989, to provide a vented fuel tank cap with a pressure relief valve and a float valve, as well as with a fusible element for venting the tank above a predetermined temperature through a hole in the top of the cap. However the apparatus shown in such patent is more complicated and expensive than the present invention. In addition it has the disadvantage of connecting the fuel tank cap to the top of the filler tube by means of threads which can cause difficulty in releasing the cap. Thus, when the threads get dirty due to dust, mud and other foreign materials, the cap sometimes sticks and is very hard to remove. Similarly, when the threads have moisture contained therein the cap may freeze closed. These problems are overcome with the vented fuel tank cap of the present invention by employing a cam actuated connector to attach the cap to the top of the tank filler tube for quick and easy removal. Also with the present cap three vent passages are provided including a first passage which is normally open for venting the tank at normal pressure and temperature, a second passage containing a pressure relief valve for venting the tank above a predetermined higher pressure, and a third passage normally closed by fusible metal plugs, which melt above a predetermined temperature. These three passages have common outlet openings for venting all passages through the cam actuated connection between four cam actuators spaced around the periphery of the filler tube. In addition the pressure relief valve is more efficient because it employs a larger vent opening around the entire periphery of the tank fill tube, while the above described prior pressure relief valve vents through a smaller opening in the top of the cap.
It is also previously been proposed in U.S. Pat. No. 4,162,021 of Crute issued July 24, 1979, to provide a pressure vacuum release fuel tank cap with a roll over gravity operated safety valve including a metal ball which closes a vent valve to prevent spillage when the truck rolls over. In addition, this vented fuel tank cap is provided with a cam lock connector for fastening the cap to the inside of the filler neck tube to resist high pressure like a radiator cap. However this has the disadvantage that the cam surface extends into the filler neck and is exposed to the corrosive effects of the fuel contained in such filler neck. The pressure relief valve employed in such cap is much more complicated construction and employs two additional operating springs which are separate from the spring used for closing the cap. In addition there is no disclosure of the use of three vent passages having a common outlet which contain three different valves such as a pressure relief valve, a float valve, and a fusible plug valve to provide safety venting under several different conditions in the manner of the present invention. Also the vent opening for the pressure relief valve is of much smaller area than that of the present invention.

Vented fuel cap with cam actuated connector


An object of the present invention is to provide a novel method for producing a fluorine-containing methylene compound. The above object can be achieved by a method for producing a compound represented by formula (1):

Since some physiologically active substances in vivo are fluorinated methylene-containing compounds, applications of fluoromethylene-containing compounds to, e.g., drugs have been actively studied.
For example, methods for producing fluorine-containing methylene compounds, such as α-fluoromethylene compounds and α-difluoroaldol compounds, which are carbonyl compounds having, at the α-position, at least one substituent selected from the group consisting of fluorine atoms and perfluoro organic groups, are highly useful (Non-patent Literature 1 and 2).
As one example of the method for producing a fluorine-containing methylene compound, Patent Literature 1 discloses the following.
A method for producing a compound represented by formula (1) or a ring-closed or ring-open derivative of the compound:
wherein R1 represents an organic group,RX represents hydrogen or fluorine,R2a, R2b, R2c, and R2d are the same or different, and each represents —Y—R21 or —N(—R22)2, or R2b may be connected to R2c to form a bond,wherein Y represents a bond, oxygen, or sulfur,R21 represents hydrogen or an organic group, andR22, in each occurrence, is the same or different, and represents hydrogen or an organic group;the method comprising step A of reacting a compound represented by the following formula (2):
wherein X represents a leaving group, and other symbols are as defined above,with a compound represented by the following formula (3):
wherein the symbols are as defined above,in the presence of a reducing agent under light irradiation.

Method for producing fluorinated compound

Abstract: wherein R1 represents an organic group, RA represents hydrogen or fluorine, R4a represents hydrogen or an organic group, R4b represents hydrogen or an organic group, R5a represents hydrogen or an organic group, R5b represents hydrogen or an organic group, andR2 represents hydrogen or an organic group; R2 is optionally connected to R4a to form a ring; the method comprising step A of reacting a compound represented by formula (2):

Abstract: wherein X1 represents a leaving group, and other symbols are as defined above, with a compound represented by formula (3):

Abstract: wherein X2 represents a leaving group, and other symbols are as defined above, in the presence of a reducing agent as desired, under light irradiation.


A plug and play mass storage reflector. The mass storage reflector can include a wireless data transceiver coupled to a plug-and-play adapter configured for connection to a personal computing device, a device selector disposed in the reflector, and, device interface logic coupled both to the wireless data transceiver and the device selector. The device interface logic can be programmed to map mass storage in the personal computing device as specified by the device selector to a shared resource over a wireless network established through the wireless data transceiver. Importantly, the device interface logic can map the mass storage without exposing a peer-to-peer wireless network to a remote computing device.

1. Statement of the Technical Field
The present invention relates to the field of plug-and-play mass storage and more particularly to shared plug-and-play mass storage.
2. Description of the Related Art
Plug-and-play mass storage has become the rage of the early twenty-first century. From solid state removable mass storage devices such as Compact Flash™, Smart Digital™, and Memory Stick™ technology, to mechanical platter based storage devices such as the Microdrive™, digital data no longer remains bound to the bulky and largely non-portable confines of the fixed disk drive. In the context of Compact Flash, Smart Digital and Memory Stick technologies, a proprietary interface ordinarily will be required. Though the various interface specifications have been widely publicized and standardized as a matter of course, the selection and inclusion of a proprietary interface within a computing design can be expensive, require end-user configuration and can consume excessive power.
In view of the traditional difficulties associated with coupling and engaging solid state removable mass storage devices through a proprietary interface to the personal computing device, recently it has become popular to couple and engage solid state removable mass storage devices through the existing input/output ports of the personal computing device. While hard and floppy disk drives, CD-ROM, DVD-ROM, DVD-R and CDR devices have been coupled to and engaged with personal computing devices through parallel and serial input/output ports, the use of the parallel and serial input/output port has never gained a level of ubiquity expected primarily due to the requirement that devices are attached therethrough prior to boot strap.
The universal serial bus (USB) specification addressed the principal concern of peripheral component manufactures in the ability of the USB port to dynamically activate and configure an attached device in a "plug-and-play" fashion. Since its introduction, the USB interface has rapidly become the interface of choice. To that end, USB mass storage devices barely the size of a human thumb have been popularized. USB mass storage devices of late include both flash memory configurations and Microdrive configurations. Thus, the USB interface presently provides an efficient mechanism for rapidly and effortlessly added mass storage to an operating personal computing device without requiring complicated configuration and a re-booting of the personal computing device.
Despite the advantages of portable mass storage devices which can be engaged "on the fly", more advanced computing configurations, particularly small computing workgroups and home office configurations can require a level of file sharing beyond the physical exchange of a mass storage device. To that end, peer-to-peer networking technologies always have formed a small, but significant component of the computer data communications marketplace. Initially wire-bound peer-to-peer networking technologies formed the basis of peer-to-peer network computing. More recently, peer-to-peer network computing has embraced inexpensive wireless networking technologies including the various 802.11x based devices and the shorter range Bluetooth™ devices. While Bluetooth principally has found its niche in close-range data exchanges such as those between a PDA and desktop computer, or between headset and cellular telephone, 802.11x based devices have proven more applicable for larger scale applications including the formation of sophisticated wireless local area networks.
Through an established wireless local area network, individual personal computing devices can share each other's resources, including the physical mass storage devices of one another. Generally, to share a drive or a folder within a drive over an established network, one need only designate the drive or folder as a shared resource through the operating system. Subsequently, the contents of the drive or folder can be viewed and accessed by others in the peer-to-peer network, subject only the restrictions imposed by the operating system and, on occasion, by the end user.
Nevertheless, there are instances where it is desirable both to avoid coupling a computer to a peer-to-peer network, and also to share data only with a select group of individuals within a controlled, short range environment such as that more suited to short range radio frequency communications exemplified in the Bluetooth specification. Moreover, there are other occasions where one might seek to avoid configuration tasks associated with establishing a peer-to-peer network through which a resource can be shared. Yet, traditional peer-to-peer resource sharing can require one to perform some network configuration tasks which can inhibit less sophisticated users from capitalizing upon the peer-to-peer resource sharing tool.

International Business Machines Corporation


An ultraviolet index measuring method and apparatus includes preparing a first photosensor having spectral response only in a first section of a wavelength between 250 nm and 298 nm, a second photosensor having spectral response only in a second section of a wavelength between 298 nm and 328 nm, and a third photosensor having spectral response only in a third section of a wavelength between 328 nm and 400 nm. An output signal of the first photosensor, an output signal of the second photosensor, and an output signal of the third photosensor are calibrated using spectral irradiance of reference solar light. First photocurrent of the first photosensor, second photocurrent of the second photosensor, and third photocurrent of the third photosensor are measured under a measurement environment. An ultraviolet index is calculated using the first photocurrent, the second photocurrent, and the third photocurrent under the measurement environment.

1. Technical Field
The present disclosure relates to ultraviolet index measuring apparatuses and, more particularly, to an ultraviolet (UV) index measuring apparatus and method of three channels having different spectral responses.
2. Description of Related Art
The ultraviolet (UV) index is an index that is expressed with a single number by integrating a solar spectral irradiance and a McKinlay-Diffey erythemal action spectrum curve, which indicates the degree of skin damage at respective wavelengths of about 285 nm to 385 nm, with a weighting function according to a wavelength. The UV index indicates an influence of solar UV on the skin.
UV index measuring sensors currently spreading on the market spectrally measure a UV index using high-cost equipment. Alternatively, a UV index measuring sensor is manufactured such that spectral response of the sensor is approximate to a McKinlay-Diffey erythemal action spectrum curve. The UV index measuring sensor employs a UV photodiode that is manufactured to have a McKinlay-Diffey erythemal action spectrum curve through multiple thin film coating. However, it is difficult to accurately set spectral response of a UV index measuring sensor to the McKinlay-Diffey erythemal action spectrum curve. Moreover, since special coating is required, the UV measuring sensor is high-priced.

Ultraviolet index measuring method and apparatus

Korea Research Institute of Standards and Science


Disclosed is an apparatus providing minimal systems alterations in non-GSM cellular systems wishing to incorporate GSM GPRS messaging capability. This is accomplished by giving a registering terminal or MS an IP address for use in receiving both signaling and traffic data messages rather than using the SGSN as the traffic receiving entity and forwarding traffic to the MS from the SGSN and requiring signaling messages to be transmitted from the MSC to the MS by other means. This approach simplifies the integration of GPRS capability into any non-GSM configuration cellular system by providing a generic way to exchange signaling information between any MSC, having a known IP address, and any MS with an assigned IP address.

The present invention relates in general to GPRS (General Packet Radio Service) and in particular to methods and systems for tunneling data packets whereby data packets could traverse either one of GSM (Global System for Mobile Communication) and a foreign network such as a TDMA (Time Division Multiple Access) network to reach a given MS (Mobile Station).
GPRS refers to a recently implemented high-speed packet data technology. GPRS is expected to profoundly alter and improve the end-user experience of mobile data computing, by making it possible and cost-effective to remain constantly connected, as well as to send and receive data at much higher speeds than in the past. Its main innovations are that it is packet based, that it can increase data transmission speeds from the previous 9.6 Kbps to over 480 Kbps, and that it may be used to extend the Internet connection all the way to the mobile PC. In other words, the user will no longer need to dial up a separate ISP. However, GPRS complements rather than replaces the prior art data services available through cellular networks, such as circuit-switched data and SMS (Short Message Service) that has been available in some cellular telephone networks such as GSM.
Because GPRS supports standard networking protocols, configuring computers to work with GPRS is very straightforward. In the case of IP communications, one is able to use existing TCP/IP protocol stacks, such as the stack that comes with widely available operating systems such as Windows 95. TCP/IP stacks are readily available for most other platforms as well.
Another feature of GPRS is that it supports a message transmission technology typically referred to as tunneling. Tunneling is the use of encapsulation to deliver messages through a network where that network has no knowledge of the message. One use of tunneling is to support private communications over a public network to provide what is known as a VPN (virtual private network). Software is used at each end of the communication to encapsulate sent and de-capsulate received messages. In accordance with the GPRS standard, traffic data packets are tunneled across any intervening networks from a SGSN (Serving GPRS Support Node) associated with a source of traffic data packets to a GGSN (Gateway GPRS Support Node) associated with the receipt of the traffic. To forward IP or X.25 packets between each other, the SGSN and GGSN encapsulate these packets using a specialized protocol called the GPRS tunnel protocol (GTP) which operates over the top of standard TCP/IP protocols.
The GPRS standard further defines three (3) classes of terminals or Mobile Stations. (MSs). A class A terminal may receive both switched circuit and packet data communications simultaneously. A class B terminal may be used in either a packet data mode or a switched circuit mode, but may not be used in both modes simultaneously. A class C terminal is only usable for packet data communications.
The GSM GPRS network, defined by ETSI standards beginning with 03.60, has been selected as the standard for use in the North American TDMA market for data packet service. Since GSM and TDMA use somewhat different approaches in providing signaling messages to and from a given MS there are some inconsistencies that need to be solved between the voice and data networks in the TDMA system. In other words, the standard TDMA method of delivering the signaling messages is not appropriate for an MS designed in accordance with the GSM GPRS packet data standard.
One possible solution for resolving the differences is to change the GPRS network to accept signaling information from the TDMA network. This approach is undesirable in that it would require a considerable amount of standards definition work. Further, if it came to pass that other networks wanted to be able to receive and transmit signaling messages to a MS designed in accordance with standards agreed upon in the in a GSM GPRS and North American TDMA (TDMA 136) GPRS, further standards definition work would be required. A more desirable approach is to find a method whereby a signaling path can be provided transparently through the GPRS network from any MSC (Mobile Switching Center) whether part of a GSM, TDMA-136, CDMA or other type cellular network, directly to any MS registered to that home MSC. If such a solution would allow a packet data MS to roam to and operate in foreign type networks, while still receiving signaling messages from its home network, the method would have great economic impact.
The present invention comprises a method of permitting a home MSC and an MS, registered with that home MSC, located anywhere in the GPRS network to exchange signaling messages through the process of assigning IP addresses to both the MSC and to the MS, when the MS registers with the GPRS network, tunneling encapsulated signaling messages through the network between the MS and its associated home MSC and de-encapsulating the signaling messages at the signaling message destination.

Tunneling signaling method and apparatus


A conduit guide for a concrete beam construction that enables an MEP line to pass through the concrete beam includes a body defining a through passage, a securement panel in the passage, and a pair of sealing flanges on open ends of the body. The securement panel enables securement and/or alignment of an MEP line extending through the passage.

Baur et al. U.S. Pat. No. 5,245,806 incorporated by reference as if fully set forth herein discloses the concrete beam conduit guide A shown in FIGS. 20-22. The conduit guide includes a body B having a pair of sealing flanges C disposed on opposite ends D of the body.
The body B includes an unbroken tubular wall E extending from one end to the other end. The wall includes a roof R, opposite floor F, and opposing side walls S joining the roof and floor. The wall E defines a through passage P extending from the one end to the other end and includes an inside wall surface I facing and surrounding the passage.
Conduit guides are cast into T-beams. T-beams are commonly used, for example, in the construction of multi-floor parking garages. The conduit guide when cast into the T-beam facilitates feeding of lines and conduits and the like through the T-beams by passing them through the conduit guide passages.
Mechanical, electrical, and plumbing lines and conduits that pass through a conduit guide will be referred to as "MEP lines" herein. An MEP line can be a single mechanical line, electrical line, or plumbing line, or can be made of multiple mechanical lines, electrical lines, or plumbing lines arranged to extend as a unitary member through the conduit guide.
It may be desirable to secure and/or maintain alignment of an MEP line extending though a conduit guide. For example, building codes or technical standards may require that MEP lines be secured between spans of T-beams.
Yingling U.S. Pat. No. 9,580,920 discloses a conduit guide having a tubular body and a mounting member that is received in a wall opening of the tubular body. The mounting member holds mounting hardware that extends into the interior of the tubular body and holds an MEP extending through the tubular body. The wall opening must be covered during pouring of concrete around the conduit guide and it is inconvenient to stock and handle a separate mounting member.


Apparatus for converting a semi-automatic weapon into a single shot weapon. In one embodiment, the lower receiver of the weapon is replaced by a lower receiver that has no magazine well. The replacement receiver contains a loading block that can be loaded through the ejection chamber of the weapon. A spring biased plunger is provided in the replacement receiver for moving the bolt catch into a holding position when the bolt is moved into a battery position. In a second embodiment of the invention a dummy magazine is permanently secured in the magazine well and contains a loading block that can be loaded with a cartridge through the ejection port of the weapon. A spring biased plunger is mounted in the dummy magazine behind the loading block that is arranged to bias the bolt catch of the weapon into a bolt retaining position when the bolt is in a battery position.

This invention relates to apparatus for removing the magazine well from a semi-automatic weapon and providing the weapon with a single shot loading capability.
Semi-automatic firearms capable of firing a large number of rounds in a short period of time are readily available at affordable prices to the general public. Misuse of these rapid fire weapons, however, is of growing concern, particularly among law enforcement people. Most semi-automatic weapons can accept magazines holding twenty or more rounds, thus providing law breakers, terrorists and the like with unprecedented firepower. Attempts are presently being made to make the use of detachable magazines in association with this type of weapon illegal.
Many of these semi-automatic weapons are sold to sportsmen for hunting or target shooting purposes and accordingly there is no need for a large detachable magazine. No one to date, however, has attempted to remove the magazine well from a semi automatic weapon and allow for single shot operation of these potentially dangerous weapons.


A new Impatiens plant particularly distinguished by medium-sized, double orange and while flowers borne well-above the foliage, medium-green foliage with round leaves, an early flowering response, floriferous throughout the summer and a medium-sized, bushy and moderately tight plant habit, is disclosed.

The present invention comprises a new and distinct cultivar of Impatiens, botanically known as Impatiens walleriana, and hereinafter referred to by the cultivar name 'Silte Oransar'. The new cultivar originated from a hybridization made in May 2003 in Andijk, The Netherlands. The female parent was the proprietary red-star-flowered Impatiens plant 'ID03-20-7' (unpatented), while the male parent was the proprietary salmon-star-flowered Impatiens plant 'ID03-30-6' (unpatented). The seeds produced by the hybridization were sown Andijk, Netherlands in October 2003. A single plant selection was chosen for further evaluation and for asexual propagation in December 2003 in Andijk, The Netherlands.
The new cultivar was created in 2003 in Andijk, The Netherlands and has been asexually reproduced repeatedly by vegetative cuttings and tissue culture in Andijk, The Netherlands and Hillscheid, Germany over a two-year period. 'Silte Oransar' has not been observed under all possible environmental conditions. The present invention has been found to retain its distinctive characteristics through successive asexual propagations.
Plant Breeder's Rights for this cultivar were applied for in Canada on Oct. 17, 2005 and with the European Union on Nov. 18, 2005.


A semiconductor integrated circuit is reduced in size by suppressing lateral extension of an isolation region when impurities are thermally diffused in a semiconductor substrate to form the isolation region. Boron ions (B+) are implanted into an epitaxial layer through a third opening K3 to form a P-type impurity region, using a third photoresist as a mask. Then a fourth photoresist is formed on a silicon oxide film to have fourth openings K4 (phosphorus ion implantation regions) that partially overlap the P-type impurity region. Phosphorus ions (P+) are implanted into the surface of the epitaxial layer in etched-off regions using the fourth photoresist as a mask to form N-type impurity regions that are adjacent the P-type impurity region. After that, a P-type upper isolation region is formed in the epitaxial layer by thermal diffusion so that the upper isolation region and a lower isolation region are combined together to make an isolation region.

1. Field of the Invention
This invention relates to a semiconductor device and its manufacturing method, specifically to a technology to form an isolation region for a semiconductor element.
2. Description of the Related Art
In a semiconductor integrated circuit, an isolation region to electrically isolate a semiconductor element such as a bipolar transistor from other semiconductor elements is conventionally formed by introducing impurities into a semiconductor substrate and thermally diffusing the impurities. Technologies for this kind of forming of the isolation region are disclosed in Japanese Patent Application Publication Nos. H09-97852 and H09-97853, for example.
When the impurities introduced into the semiconductor substrate are thermally diffused, however, a lateral diffusion is caused along with a vertical diffusion (a diffusion toward a depth of the semiconductor substrate), which raises a problem that the isolation region and a well region require a large pattern area that makes reducing a size of the semiconductor integrated circuit difficult.

Semiconductor device and manufacturing method thereof

Semiconductor Components Industries, LLC


A method, computer program product, and system performing a method that includes a processor compiling a description including information to be utilized by programmable logic to recognize a code fingerprint in a program executing in the runtime environment. The method also includes the processor configuring the programmable logic, by loading the description into the programmable logic at a predefined time and obtaining, during runtime of the program, an alert that the programmable logic recognized the code fingerprint in the program.

A code fingerprint, referred to herein also as a fingerprint, is specific processor behavior that occurs when a given section of code is executing. This processor behavior includes any recognizable behavior such as a particular sequence of branch prediction hits and misses, a particular sequence of data cache hits and misses, a particular sequence of taken and not taken branch instructions, and/or any other behavior or pattern recognizable by hardware. Code fingerprints include, but are not limited to: data cache hit miss sequences for various cache levels, data cache hit miss sequences for a given instruction at a given cache level, sequences of correct/incorrect predictions for either a code segment or for a specific set of branches in a code segment, and a branch taken/not taken history when a given instruction is executed. A code fingerprint may also be a sequence of values, including but not limited to: a sequence of branch target addresses, a sequence of indirect branch target addresses, a sequence of addresses loaded by a load instruction either by a specific instruction or by a sequence of instructions, and/or a sequence of call signatures either for a given function or for all functions.
The number of code fingerprints that a given processor can recognize when code is executed in a computing environment is presently limited because different types of hardware are required to recognize different types of behaviors that comprise different code fingerprints. Thus, a given processor may only recognize a limited number of code fingerprints, which can lead to issues. For example, if recognition of a given fingerprint is not supported in a computing environment, the runtime environment has no way of confirming that a certain sequence is executing. Additionally, a fingerprint recognition apparatus may not have the capability of recognizing a new types of fingerprint that today's rapidly-changing technology may require.

This patent is subject to a terminal disclaimer.


A device for the cleaning of pipes, such as household waste and sewer pipes is proposed, the device includes a nozzle movable in at least three axes within a pipe for providing a jet of cleaning fluid directed to soilage in pipes; a cleaning hose for supply of cleaning fluid is connected to the nozzle and a swivel mechanism for deflecting the nozzle at an angle relative to a longitudinal axis, a front end portion of the hose is bent in a bending direction in a bending plane; at least one drive for deflecting the nozzle around the longitudinal axis by changing the direction of bending and the bending plane without torsion to the cleaning hose.

The present invention relates to a device for cleaning pipes, in particular, sewage pipes from household- or industry waste water.
Incrustations, depositions, biofilm and formations at pipe walls in pipe systems represent a considerable problem in connection with sewage pipes, water treatment plants, in ground water remediation, and in industrial installations. Construction damage through road works can lead to blockages in underground sewage systems due to, such as, for example, concrete that has penetrated through cracks or ingrown tree roots. Torrential rain can render sewer lines blocked by leaves, refuse and similar material. Industrial, domestic and mining waste water normally contain a great array of nutrients that are microbially useful and that thus leads to a disproportionally strong growth of biofilm at the walls of the pipes up to complete blockages. The cleaning capacity of water treatment plants is thus hampered and the quality of the treated waste water reduced while interrupting operation for costly cleaning work is necessary.
Drainage units and dewatering of tunnel systems and streets particularly in hillside locations are likewise affected by this. A stoppage to conduct maintenance and remediation can already represent a hardship for the local economy.
When penetration of foreign objects or pipe blockages occur, usually the pipes are either entirely impaired or are only partially usable. Pipes that are completely blocked can be unblocked with only considerable and costly effort or sometimes cannot be totally freed from these foreign objects, as for example under streets, houses, transformer stations, walls and other such structures.
Conventional cleaning methods such as mechanical cleaning or customary rinsing techniques are borderline effective. Mechanical cleaning has the added danger of damaging the pipes. This refers also to the flushing technique that utilizes spin chains in addition to flushing jets. The flushing technique results sometimes only in an inadequate cleaning when the encrustations are very resistant, or the depositions at the pipe wall are biofilms. The high turn around time in the prescribed maintenance intervals leads to economic loss for the operators of the pipe systems because of long cleaning cycles.
Various devices and methods are known for eliminating such problematic sites. Basically, there are a variety of mechanical, chemical and hydrodynamic pipe cleaning devices and/or methods available.
When applying mechanical pipe cleaning, flexible spirals are manually inserted into the pipe that are mostly put into rotation by an electric drive. Thus, solid depositions are eliminated from the inner pipe walls. These devices are very common, however their limitation shows when the encrustations are tougher than the pipe wall itself. This is particularly so with pipes from plastic that have, during their lifetime, become brittle due to evaporation of softener in the plastic. The stress through repeated striking when applying mechanical pipe cleaning systems can lead to pipe breakage.
When applying chemical pipe cleaning, the intention is to dissolve the encrustation. For this purpose, special cleaning liquids, mostly acids of a certain concentration are introduced into the pipe. The success of that type of cleaning is however quite uncertain, as the chemical reactions in the pipe to be cleaned happen in a rather uncontrolled manner. Under certain circumstances, this cleaning process has to be repeated multiple times until the desired cleaning effect has been realized. A disadvantage is thereby the considerable burden on the environment due to the chemicals utilized.
The hydrodynamic pipe cleaning has been established especially for sewer cleaning. Thereby, a rinsing head is inserted into the pipe to be cleaned and a pressurized cleaning liquid introduced via a rinsing hose connected to the rinsing head. In this manner, the cleaning liquid not only serves the cleaning of the walls but also generates a forward motion of the rinsing head due to the principle of recoil force. For this purpose, the rinsing head is provided with several rearward oriented bores such that emission of the high pressure liquid sprays on the one hand cleans soilage from the pipe inner walls and on the other hand the rinsing head generates the forward motion. Thus, the rinsing head must only be inserted into the starting opening of the pipe from where it then moves through the pipe system on its own. Those systems require the majority of the working liquid for the forward feed, whereby the working liquid reaches the pipe with great speed in opposite direction to the rinsing head.
For the removal of tough encrustations, such as for example lime scale and urine scale build-up, a high pressure spray, that is, pressures of up to several hundred bar is required. While rinsing heads with pressures of up to 200 bar and flow-through amounts of several hundred 100 l/per minute up to 1400 l/per minute are also in operation, the energy emitted from the nozzles are only partially converted into cleaning capacity. The greater portion serves the forward motion of the rinsing head and the transport of loose material such as for example loose stones, gravel and sand that are carried off by the rinsing water stream.
With the maximum pressure water-jet robotics, a rotating liquid jet under high pressure and high velocity is directed toward the material to be removed whereby, the majority of kinetic energy is used to eliminate the faulty site. Maximum pressure water-jet robotics is derived from the method of water jet cutting. In water jet cutting, the material to be treated is subjected to maximum pressure water jet for separation. This jet carries a pressure of up to 6000 bar and reaches exit velocities up to 1000 m/s. The maximum pressure water jet allows treatment of almost all materials from foamed material up to cutting a sapphire. The maximum pressure water jet has much application in the plastics field, in the fields of metal treatment, leather- and stone treatment. By pivoting a cutting head with a cutting vector drive, as in a 3D cutting, any number of complex shapes can be cut in spatial dimension.
DE 20 2014 000 026 U1 describes a device for the treatment of pipe walls of closed sewer systems by means of maximum pressure liquid jet with a nozzle body having at least one jet nozzle. The jet nozzle is disposed at the front end of the device and serves the creation of a forwardly directed focused jet of a liquid medium. The forward motion of the jet includes that the jet direction matches the axis of the sewer pipe and also that the direction of the jet, or the jets, have an angle of −90°<α<90° relative to the sewer pipe axis depending on the type and degree of the depositions and obstructions. To that end, a focused jet is a jet that is created by means of a nozzle opening with a much reduced diameter, locally applied with high force to the material to be removed. To remove large scale material, a greater number of nozzles are utilized and/or the nozzle or the jet is moved to scan across the respective surface. A scanning is for example realized through a rotation nozzle, where the nozzle body itself rotates or, in the area of the jet exit from the nozzle body, for example, a finger-shaped insert rotates in the hollow space in front to the output such that the emerging jet circles resulting in a conical jet formation. The device includes a movable carriage for moving and positioning of the nozzle body in the sewer canal in addition to a medium supply to supply the nozzle jet with a medium under high pressure. The carriage and the nozzle body are constructed so that both can be positioned, at least along the entire length of their bottom side, at a distance to the walls of the sewer canal. A pneumatic or hydraulic activated fixing pad is arranged at the rear of the carriage and configured in such a way that in an actuated state the position of the carriage can be fixed in the canal by pressing the fixing pad but without closing off the canal.
The maximum pressure water jet robotics is a very recent method utilized in pipe cleaning. Working pressure is usually 1000 to 2500 bar. Currently on the market for the maximum pressure water jet robotics is the system by Mauerspecht GmbH. The Drain-Jet Robotics® is designed for pipe cross sections of from DN 180 with which a controlled and camera-supported removal of residue can be realized. This is accomplished in substantially shorter time as compared to using the conventional grinding robots or hydrodynamic pipe cleaning systems. The cutting of inliners, the removal of calcium- and concrete depositions as well as the cutting of steel foreign bodies can be realized at a very high level. This system is however limited in its application since it can be utilized with straight pipes only and for sleeve misalignments only from DN 250.
From DE 10 2009 007 946 A1, a device is known for hydrodynamic cleaning of inner pipe walls, in particular water carrying pipes in the domestic area which includes a high pressure cleaning nozzle with a high pressure cleaning hose attached thereto for supplying pressurized cleaning liquid, especially water. The cleaning device further includes a flexible, pressure stable bar or rod-shaped sliding device, with a high pressure cleaning nozzle is disposed at one end and suitable for insertion into the pipe to be cleaned. The cleaning device comprises in addition a pipe suitable carriage on which the high pressure cleaning nozzle and/or a portion of the high pressure hose extension is fastened. The cleaning work can be monitored with a camera connected to a video data line that is disposed in proximity of the high pressure cleaning nozzle. Thereby, the high pressure cleaning nozzle is moved by means of the bar- or rod shaped moving device to the location to be cleaned. This system operates normally with a pressure of 100 bar to maximal 500 bar.
As a further system, steerable satellite rinsing cameras are available on the market. These systems exploit the low pressure water jet directed rearward toward the pipe wall in order to move along the pipe. An additional utility, a certain cleaning effect of the rearward pipe is realized. In order to examine the condition and thus determine the correct functional condition or check leakage of the pipe, a further camera navigates the process to be carried out. Solid depositions, protruding obstacles cannot be eliminated with such a system.
DE 20 2010 016 857 U1 describes a high pressure water jet device which includes a flat bed driver carriage moving on four wheels with a nozzle bracket mounted at the front end. The nozzle bracket holds a nozzle with several nozzle openings in radial orientation relative to the canal and vertical to the drive direction. The nozzle bracket includes a pivot arm mounted at the front end of the carriage. By means of the pivot arm the nozzle is, for example, movable in two drive directions; perpendicular as well as parallel to each other. In addition, the nozzle is pivotable around its horizontal, parallel to the driving direction oriented swivel axis, which, for example, may be the axis of the nozzle pivotable around 360°. If a firm connection of the nozzle to the medium supply has been established, the nozzle swivels alternating around the 360°. Additionally, a camera is provided which is suitable to detect the environment of the canal, for example any branching in the canal or any obstacles, so that corresponding to the situation, an operator outside the canal can react to preprogrammed alerts of the device. A camera can also capture an image of the controls and transmit the photo images to the outside operator.
DE 20 2011 000 650 U1 describes a device for the examination and cleaning of pipes and pipe lines, in particular sewer lines that include a cleaning head additionally provided with a camera and wherein each of these are disposed at the end of the high pressure hose. The cleaning head is provided with one or more circumferentially disposed nozzles that are optionally configured for controlling and switching actions. The nozzles can move the cleaning head precisely in one direction and can direct it simply into an arm of the canal. To control the position, the camera images are consulted. The nozzle or nozzles at the circumference are configured rotatable and can be operated by a motor. The rotatable nozzle can always be pivoted in precise manner in the opposite direction in which the cleaning head is being moved. According to a variant, it is also possible to dispose the circumferential nozzle at the center axis so that it can revolve around this center axis.
Also offered on the market are canal milling robots by various producers that are utilized for operation on canal rehabilitation. The robot is for that purpose provided with a milling motor that can be driven by hydraulic or pneumatic means. Especially constructed milling tools are utilized for the deposited materials to be removed. The milling tool allow only a point removal of the material deposition. Manual control and the characteristics of the milling tools render any removal of deposition without contacting the canal wall and thus non-damaging not feasible or feasible only through excessive use of time.
A further commonly-used method is the removal of obstacles in the older pipes by means of spin ropes and spin chains. Spin chains are usually used in removal of solid depositions such as calcium, cement slurry, roots and such. Thereby, the driving nozzle rotates with the same speed as the chains to realize a precisely defined grinding effect within the pipe. While the chains should always correspond to the pipe size, the inner wall surface of the pipe is always being affected and camera monitoring cannot permanently cover the entire work process. A final check is carried out at the end of the process by means of a separately conducted camera check. If the cleaning result was not satisfactory, the process has to be repeated.


P-type metal-oxide semiconductor field effect transistor (PMOSFET) devices have a characteristic property known as threshold voltage. This threshold voltage may consist of separate threshold voltages associated with the main portion of the gate region of the device and with the sidewall corner of the device. Under some conditions, the threshold behavior in the sidewall corner region of the device may dominate the performance of the device, not necessarily in the manner intended by the designer of the device. A method of controlling threshold voltage behavior is described. In particular, ion implantation of nitrogen in the gate sidewall region of the device can provide such control. Devices made by this method are also described.

The present invention relates generally to methods for manufacturing transistors and integrated circuit devices comprising multiple transistors. In particular, the invention relates to p-type metal-oxide-semiconductor (PMOS) devices and methods for manufacturing such devices. The invention relates most particularly to field effect transistor (FET) devices, including PMOSFET devices, and the manufacture of such devices. The invention comprehends both discrete PMOS devices, or PMOS devices included in integrated circuit devices.
There are two major types of FET devices, the metal-oxide-semiconductor field effect transistor or MOSFET (also called an insulated-gate FET, or IGFET), and the junction-gate FET, or JFET. An FET has a control gate, and source and drain regions formed in a substrate. The control gate is formed above a dielectric insulator that is deposited over the area between the source and drain regions. As voltage is applied to the control gate, mobile charged particles in the substrate form a conduction channel in the region between the source and drain regions. Once the channel forms, the transistor turns xe2x80x9conxe2x80x9d and current may flow between the source and drain regions.
Transistors are used as either amplifying or switching devices in electronic circuits. In the first application, the transistor functions to amplify small ac signals. In the second application, a small current is used to switch the transistor between an xe2x80x9conxe2x80x9d state and an xe2x80x9coff state.xe2x80x9d
In recent years, the computer industry has experienced extremely rapid growth in all aspects, including number of units produced, breadth of applications, power and speed of operation, and complexity of competing machines. This growth is attributable to many factors, including remarkable increases in the number of active devices (typically transistors) included in the integrated circuit devices used in computers. By increasing the number of transistors in an integrated circuit device, the size of a computer may be reduced, or a more complex computer may be made within a particular computer case size. In addition, by increasing the number of transistors in an integrated circuit device, operational problems such as cross talk between physically adjacent conductors and signal propagation delays between different sections of the computer can be reduced. Further, integrated circuit devices are typically less expensive and more reliable than counterparts manufactured from discrete components. For these and many other reasons, the use of integrated circuit devices of increasing size and complexity has become the standard of the computer industry.
The trend toward more complex integrated circuit devices has resulted in increasing density of individual devices within the integrated circuit devices. To increase the number of individual devices within an integrated circuit, it is necessary to decrease the size of each individual device. The size of individual devices cannot be reduced arbitrarily. There are limitations to size reduction, including dimensional tolerance capabilities associated with manufacturing processes and various electrical phenomena that are associated with physical dimensions of the device. In addition, the essential need for high reliability of integrated circuit devices places limitations on shrinking the size of such devices. The steps of identifying these and other limitations and discovering techniques for ameliorating these limitations have made possible the increasing complexity of integrated circuit devices.
The prior art in the field of manufacture of PMOS devices has numerous examples of identification of problems that occur during manufacture and subsequent usage of such devices. The art also has examples of proposed solutions to the identified problems. A brief summary of some of the relevant patent art is provided below.
U.S. Pat. No. 4,420,872 issued to Soledad de Zaldivar teaches the use of nitrogen ion implantation to create a silicon nitride-containing layer as a mechanism to mask FET devices against undesired silicon oxidation during manufacture. U.S. Pat. No. 4,774,197 issued to Haddad et al. teaches the use of nitrogen ion implantation into the polycrystalline silicon gate of an FET which, during subsequent high-temperature causes a formation of silicon nitrides at the interface between the gate and the underlying gate insulation, and at the interface between the gate insulation and the underlying silicon substrate. This structure makes the gate insulation more nearly defect-free and more reliable in service.
U.S. Pat. No. 5,330,920 issued to Soleimani et al. teaches the use of nitrogen ion implantation as a mechanism to control gate oxide layer thickness. The patent teaches growing a sacrificial oxide layer on the surface of a silicon substrate, implanting nitrogen into the substrate through the sacrificial layer, removing the sacrificial layer, then growing a gate oxide layer. Where the nitrogen had been previously implanted into the substrate, the rate of gate oxide layer growth is reduced.
U.S. Pat. No. 5,468,657 issued to Hsu and U.S. Pat. No. 5,589,407 issued to Meyyappan et al. each teach the use of nitrogen ion implantation in conjunction with the growth of buried oxide layers that comprise the insulator in silicon-on-insulator (SOI) wafers used in manufacturing complementary metal-oxide-semiconductor (CMOS) devices. U.S. Pat. No. 5,908,312 issued to Cheung et al. teaches the implantation of atomic nitrogen into the silicon substrate before the growth of an oxide gate insulating layer. The patent specifically states that atomic nitrogen is the preferred species for this purpose, as opposed to molecular nitrogen.
Five recent patents, assigned to a common assignee, have taught the importance of threshold voltage in MOS transistor devices, and have described ways to control that voltage. These five patents are U.S. Pat. Nos. 5,674,788; No. 5,893,739; No. 5,909,622; No. 5,851,893; and No. 5,861,335. In the first of these patents, Wristers et al. teach that an oxynitride gate insulation layer reduces the likelihood of diffusing boron from the gate into the channel region lying below the gate. The oxynitride layer also reduces the trapping of electrons in the gate insulator. Wristers et al. also teach that the oxynitride layer is advantageously grown in situ by using a growth atmosphere that contains nitrous oxides, nitric oxides, or both.
The next two patents describe the deleterious effects of hot carriers, whether holes or electrons, that can accumulate in the gate oxide layer and raise the threshold voltage of the MOSFET device. The transistors produced according to the of these two patents feature asymmetrical construction, with a wider barrier between the gate and drain than between the gate and source. Gardner et al. teach a mechanism to control hot carrier effects by injecting barrier atoms into the silicon beneath the gate edge near the drain. Hause et al. teach implanting nitrogen into the silicon substrate on either side of the channel region, where such implantation is done concurrently or after the doping of the source and drain regions.
The existence of a threshold voltage is an inherent characteristic of MOSFET devices. In the case of a PMOSFET, a high threshold voltage signifies that the device is readily turned xe2x80x9con,xe2x80x9d meaning that holes flow from the source to the drain. A practical consequence of a high threshold voltage is that the PMOSFET has a greater current-driving capability, which implies a higher speed of logic level transitions. Thus, high threshold voltages in PMOSFET devices are desirable to increase the operating speed of digital circuits. Conversely, a high threshold voltage increases the susceptibility of the device to current flow between the source and drain when the gate voltage is less than the threshold voltage; that is when the device operates in a sub-threshold regime. Also, a PMOSFET having a high threshold voltage typically has less immunity to electrical noise and has higher contribution to the chip standby current resulting from an increase in channel xe2x80x9coff current.xe2x80x9d
These effects are described in greater detail by Wristers et al. in U.S. Pat. No. 5,674,788 at Column 1, Lines 13-54, which disclosure is incorporated herein by reference. Fortunately, the threshold voltage of a PMOSFET device can be controlled by choices in the physical design of the device and by choices of manufacturing process parameters. As a general rule, PMOSFET devices are typically designed and manufactured to have a high threshold voltage, subject to constraints relating to the intended application of the devices.
Research leading to the present invention has indicated that a PMQSFET device may have a threshold voltage characteristic of the sidewall corner regions of the channel (identified in FIG. 1 at 64 and 66) that is different from the threshold voltage in the main section of the gate between the two sidewalls (identified in FIG. 1 at 68). The sidewall corner regions of the channel are identified at the interface between the device isolation substance and the single crystal silicon along the channel. The contribution of these regions to the sub-threshold conduction can be conveniently visualized as that of a parasitic sidewall corner PMOSFET acting in parallel with the main PMOSFET device. There may exist a situation where the threshold voltage of the main section may be low enough so that there is virtually no contribution to the channel xe2x80x9coff currentxe2x80x9d from this region, while the threshold voltage of the sidewall corner PMOSFET device is high enough to permit significant xe2x80x9coff current.xe2x80x9d In the extreme case, the xe2x80x9coff currentxe2x80x9d through the sidewall corner device can be great enough for the electrical output of the device to be interpreted as xe2x80x9conxe2x80x9d even though from the input signal to the gate the electrical output should be xe2x80x9coff.xe2x80x9d The role of the sidewall comer region in controlling xe2x80x9coff currentxe2x80x9d behavior had not been known before the present invention.
Research leading to the present invention has also shown that the channel xe2x80x9coff currentxe2x80x9d of a PMOSFET device can be affected by the operating conditions of the device. In particular, a phenomenon called xe2x80x9chot carrier degradationxe2x80x9d produces electron trapping localized in the gate-drain region of the device, this phenomenon causes an increase in the threshold voltage of the device and, therefore, and increase in channel xe2x80x9coff current.xe2x80x9d Although this effect can occur at any location along the junction between the gate and drain, it is most acute in the gate-drain-sidewall corner region. Hot carrier degradation may result, therefore, in the activation of the parasitic sidewall corner device increasing the xe2x80x9coff currentxe2x80x9d channel contribution. Hot carrier degradation may be either temporary or permanent. It affects operating characteristics of the device, constrains the methodologies for effective bum-in coverage, and limits aggressive use of the device.
Recognizing the considerable likelihood of PMOSFET devices having high threshold voltages in their sidewall corner regions, it is an object of the present invention to provide such devices that have reduced sensitivity to threshold voltage increases during operation and burn-in in their sidewall comer regions. It is also an object of the present invention to provide a method for manufacturing such devices. It is another object of the present invention to provide PMOSFET devices that have reduced sensitivity to parasitic sidewall comer activation and to hot carrier degradation that may take place during burn-in and use conditions.
It is a further object of the present invention to provide such technologies for both buried channel and surface channel PMOSFET devices. It is yet another object of the present invention to provide such technologies for PMOSFET devices having either thick or thin gate oxide layers, or even dual gate oxide layer thicknesses. Still other objects and advantages of the present invention will be obvious or apparent from the detailed description of the invention provided in this specification.
The method of manufacture of the present invention, as described below, accomplishes these and other objects through a combination of design concepts and embodiments of those concepts. The method is applicable to the manufacture of PMOSFET devices, both discrete devices and devices incorporated into integrated circuits. Similarly, devices manufactured in accordance with the teachings of the present invention accomplish the objects set forth above and other objects.
The essence of the present invention is implanting a low-energy dose of nitrogen at the interface along the channel region between the silicon substrate and the isolation substance before the growth of gate oxide insulation. This manufacturing process reduces the hot carrier-induced activation of parasitic sidewall corner PMOSFET devices. The accomplishment of this improvement is not restricted to a localized nitrogen implantation along the sidewall corner area, but can also be achieved by a uniform nitrogen implantation into the surface of the silicon substrate of a PMOSFET device immediately before the growth of gate oxide insulation. Other steps in the process of manufacturing the PMOSFET device are substantially similar to practices commonly used in the industry. A PMOSFET device manufactured by this method is also part of the present invention, for some of its operational characteristics are unique to devices so manufactured.
Research leading to the present invention has indicated that the method is applicable to both single and dual gate technologies. It is also applicable to PMOS devices having either thin or thick gate oxide insulators, or gate oxide insulators that have both thin and thick sections. It is therefore intended by the inventors that this discussion of their invention, and the appended claims, be interpreted as specifically including the types of devices included in this paragraph, and other related devices.
It is understood that the foregoing summary and the following detailed description of the invention are exemplary, but are not restrictive, of the invention.

PMOSFET device with localized nitrogen sidewall implantation

International Business Machines Corporation


In an optical deflector including a mirror, a support frame surrounding the mirror, at least one torsion bar arranged along an axis of the mirror having an end coupled to an outer circumference of the mirror, a pair of piezoelectric actuators arranged between the support frame and the torsion bar, and a piezoelectric sensor inserted between the torsion bar and one of the piezoelectric actuators, the piezoelectric sensor includes at least one piezoelectric sensor element having a width being smaller than two-fifths of a width of the one of the piezoelectric actuators and being arranged at a wide portion within two-fifths of the width from an inner end of the one of the piezoelectric actuators.

1. Field
The presently disclosed subject matter relates to an optical deflector used as a scanner in a projector, a bar code reader, a laser printer, a laser read amplifier, ahead-up display apparatus or the like.
2. Description of the Related Art
Recently, in a projector or the like, a spotlight is deflected by an optical deflector and then, is projected on a screen. Such an optical deflector is a micro electro mechanical system (MEMS) device manufactured by semiconductor manufacturing processes and micro machine technology.
A first prior art one-dimensional optical deflector is constructed by a circular mirror, a support frame surrounding the circular mirror, a pair of torsion bars connected between the support frame and the circular mirror, piezoelectric actuators provided between the support frame and the torsion bars for vibrating (rocking) the circular mirror through the torsion bars with respect to an axis of the circular mirror, and two semi-ring-shaped piezoelectric sensors provided at a circumference of the circular mirror for sensing rocking vibrations caused by the piezoelectric actuators (see: FIG. 1 of JP2011-150055).
The above-described first prior art one-dimensional optical deflector has, however, the following problems:
a) Since the semi-ring-shaped piezoelectric actuators are also rocked in association with rocking of the mirror, the resonant frequency thereof would be decreased.
b) Since conductive layers located from the semi-ring-shaped piezoelectric sensors on the circular mirror through the torsion bars to pads on the support frame are very long, the resonant frequency of the circular mirror is also affected by the weight of the conductive layers, so that the resonant frequency of the circular mirror would fluctuate from an optimum design value.
c) When one of the semi-ring-shaped piezoelectric sensors is expanded, and the other semi-ring-shaped piezoelectric sensor is retracted, the sense voltages of the two semi-ring-shaped piezoelectric sensors opposite in phase to each other would be compensated for by each other, thus reducing the entire detected sense voltages of the semi-ring-shaped piezoelectric sensors.
In a second prior art one-dimensional optical deflector, one piezoelectric sensor is provided between one of the torsion bars and one of the piezoelectric actuators on the same beam as that of the one of the piezoelectric actuators, thus solving all the problems of the above-described first prior art one-dimensional-optical deflector (see: FIGS. 16, 17 and 18 of JP2010-197994A & US2010/0195180A1).
In the above-described second prior art one-dimensional optical deflector, however, since the width of the piezoelectric sensor is the same as that of the piezoelectric actuators, the accuracy of the sense voltage of the piezoelectric sensor with respect to a resonant frequency is insufficient. As a result, even when the frequency of sinusoidal-wave drive voltages for the piezoelectric actuators is controlled by the sense voltage of the piezoelectric sensor, a resonant state cannot be realized. This will be discussed in detail later.
Note that, if a resonant state cannot be realized, it would be required to increase the drive voltages for the piezoelectric actuators in order to obtain a desired deflection angle of the circular mirror.

Optical deflector including narrow piezoelectric sensor element between torsion bar and piezoelectric actuator


The present disclosure provides an approach for a certificate authority (CA) that is distributed among nodes of a network, such that only a portion of the network nodes are required to sign and issue a digital certificate. Each node of the network includes a partial private key, the partial private key having been obtained by sharding the full private key. The sharding may be performed by a process known in the art, such as Shamir Secret Sharing and Distributed Key Generation. Systems that are inherently distributed may use the techniques herein to create a CA that is not centralized. The techniques herein leverage a database in the form of a distributed blockchain to store issued certificates and status of the certificates.

A blockchain is a growing list of records or blocks connected using cryptographic techniques (i.e., hashes). A blockchain is composed of many copies or instances of the blockchain, and the copies are synchronized using a consensus mechanism. The blockchain is typically managed by a peer-to-peer network in which nodes follow a communication protocol and block validation protocol. Once a block is recorded on the blockchain, the data cannot be altered retroactively without alteration of all subsequent blocks, which requires consensus of other nodes in the blockchain network.
A traditional certificate authority (CA) is a centralized entity that issues and revokes a digital certificate. A digital certificate certifies the ownership of a public key. However, many systems today, such as blockchain systems, are distributed. A centralized CA on which trust depends may be inherently incompatible with distributed systems.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.


A motorized carriage for opening/closing a screen moves along a rail by means of a friction wheel that is rotated by a motor and is in contact with at least one running surface of the rail. The contact force between the friction wheel and the running surface can be regulated by a presser means that enables the contact force to be varied according to a resistive force that depends on the load pulled or pushed by the carriage as it moves.

There are many devices that make it possible to maneuver the opening of a curtain. One of the solutions consists in motorizing the movement of the head carriage whereon is fixed an end of the curtain. The head carriage comprises guide wheels, in general, at least two pairs of wheels, running along running tracks formed along a rail fixed in the vicinity of the ceiling of a room.
Applications JP-A-2005-095364 and JP-A-09-327373 describe a head carriage incorporating a friction wheel driven in rotation by a motor and able to be in contact, over a portion of its periphery, with a running surface formed along a rail. The contact force between the friction wheel and the running surface can be adjusted, statically, by a presser means.
DE-A-24 36 753 teaches to take into account the direction of movement of a carriage in order to adjust the contact force of a zone of friction on a rail. Once the direction of movement of the carriage is established, the contact force is independent of the weight of the curtain.
However, during the movement of a curtain, the required force to be provided to the head carriage in order to drive the curtain, changes as it moves. In order to be able to close the curtain, the motor has to be sized in such a way as to be able pull the curtain at the end of travel, i.e., a substantial force proportional to the total mass of the curtain and able to compensate the elastic reaction of the tensioned curtain. At the beginning of a closing maneuver, the head carriage pulls a low load, as the mass of the curtain is supported by static support carriages. Durant this phase, the head carriage only moves a few support carriages and therefore only a few sections of the curtain, which represents a low weight. Then, the head carriage drives more and more support carriages. Consequently, it pulls a higher curtain mass. At the end of travel, the carriage needs to provide a substantial force, in particular proportional to the total mass of the curtain. Therefore, at the beginning of the closing of the curtain, the motor is oversized, which results in a poor output of the device and, therefore, has a negative influence on the consumption of the motor. This disadvantage is even further penalizing when the motor is powered by an autonomous source of energy, the case for which the optimization of the consumption is sought.

Motorized carriage for a curtain and concealment facility comprising such a carriage


A silicone pressure-sensitive adhesive composition is disclosed. The composition can be cured into a pressure-sensitive adhesive having a good release force against a release liner and a high peel force against several substrates. The silicone pressure-sensitive adhesive composition comprises: (A) a diorganopolysiloxane having on average at least 0.5 alkenyl groups with 2 to 12 carbon atoms per molecule; (B) an organopolysiloxane composed of R13SiO1/2 and SiO4/2 units, wherein each R1 represents a monovalent hydrocarbon group with 1 to 12 carbon atoms, having a molar ratio (R13SiO1/2 unit)/(SiO4/2 unit) of 0.6 to 1.7, and having a number average molecular weight (Mn) converted to standard polystyrene of from 1,700 to 3,000; (C) an organohydrogenpolysiloxane having on average at least two silicon-bonded hydrogen atoms per molecule; and (D) a hydrosilylation catalyst.

As compared to acrylic pressure-sensitive adhesive compositions, silicone pressure-sensitive adhesive compositions are superior to the former in their electrical-insulation properties, resistance to heat, resistance to frost, and adhesion to various substrates. Therefore, the silicone pressure-sensitive adhesive compositions find application in the production of such goods as heat-resistant adhesive tapes, electrically insulating adhesive tapes, heat-seal tapes, masking tapes for metal plating, etc. In terms of mechanisms of curing, the silicone pressure-sensitive adhesive compositions can be divided into compositions curable by an addition reaction, condensation reaction, or a radical reaction with the use of organic peroxide, of which the silicone pressure-sensitive adhesive compositions curable by an addition reaction find more common application since they can be cured by merely retaining them at room temperature or by heating for acceleration of curing. Another advantage of these compositions is that they do not form by-products.
U.S. Pat. No. 5,248,739 discloses an addition reaction-silicone pressure-sensitive adhesive composition provides high tack and peel adhesion to low surface energy substrates such as polyolefins and polytetrafluoroethylene, wherein the curable silicone pressure-sensitive adhesive composition comprises: (A) 60 to 90 parts by weight of an organopolysiloxane resin having a number average molecular weight (Mn) value of about 950 to 1,600 and consisting essentially of R3SiO1/2 siloxane units and SiO4/2 siloxane units, wherein each R represent a monovalent hydrocarbon group and the mole ratio of R3SiO1/2 siloxane units to SiO4/2 siloxane units in the organopolysiloxane having a value of from 1.1 to 1.4; (B) 10 to 40 parts by weight of a diorganopolysiloxane having at least two alkenyl groups per molecule; (C) an organohydrogenpolysiloxane having on average at least two silicon-bonded hydrogen atoms per molecule, in a sufficient amount to provide from 1 to 30, preferably 1 to 10 of silicon-bonded hydrogen atoms per alkenyl groups in the total of components (A) and (B), namely SiH/alkenyl group ratio; and (D) a catalyst amount of a platinum group metal-containing catalyst.
U.S. Pat. No. 5,248,739 also discloses the silicone pressure-sensitive adhesive composition having SiH/alkenyl group ratio of 3, comprising organopolysiloxane resin having Mn of from 1,700 to 3,000, e.g., Resin M (Mn=1,832), Resin N (Mn=1,841), and Resin O (Mn=2,322) as comparative organopolysiloxane resins, can not provide high tack and peel adhesion to substrates.
However, it was found that the organopolysiloxane resin having Mn of 1,700 to 3,000 can provide a pressure-sensitive adhesive composition having a high SiH/alkenyl group ratio with good peel adhesion and high tack to general substrates such as glass, polycarbonate (PC) and polyethylene terephthalate (PET).

Silicone pressure-sensitive adhesive composition


A fan speed testing system for testing a testing fan includes a testing fan, a collecting module, a processing module, a converting module; and a displaying module. A label is attached to the testing fan and capable of rotating with the testing fan. The collecting module is configured to collect light reflected off of the label as the fan rotates in order to produce a pulse signal. The processing module is configured to adjust the pulse signal to be a standard square wave. The converting module is configured to obtain a fan speed data of the testing fan according to conversion times between high levels and low levels of the standard square wave. The displaying module is configured to display the fan speed data.

1. Technical Field
The present disclosure relates to testing systems and methods, especially to a testing system and method for testing fan speed.
2. Description of Related Art
After computers are produced, quality tests are required. One of the tests is testing the fans of the computers. A conventional method to test the speed of the fans is using a tachometer. However, the conventional method requires opening the computer and manually positioning the tachometer close to the fan, which wastes time and manpower, and the tachometer is expensive.

Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.


A nonvolatile memory device requires no additional dummy bytes between receipt of a read instruction and a scanning out of data from a first target memory location requiring incorporation of redundant memory bits. A set of most significant redundant memory bits corresponding to a range of regular memory locations may be read speculatively after a particular set of the highest order address bits are received. After a complete address is received, any requirement for substitution of redundant memory bits is known. If no substitution is required, the regular memory contents are read. Any requirement for a substitution of memory bits may require replacement of the entire location. A regular read operation continues after the first location is read. In this way, complete and correct data for the memory location are available after receipt of a read instruction with no additional delay for including any required redundant memory bits.

Nonvolatile memories, known as flash memory devices, have become very popular in a variety of uses including mobile phones, digital answering machines, and personal digital voice recorders. Low pin count, low cost, and ease-of-use are key factors for the wide utilization of flash memory.
Contents of a sequential type of flash memory may be accessed by supplying an initial address and applying a number of clock cycles equal to the number of sequential addresses desired for access in a memory operation. An internal address counter automatically increments an access address with each clock. Data from sequential addresses are available with each successive clock cycle. This avoids any requirement of additional address sequencing externally. This capability allows sequential reading to cross page and sector boundaries seamlessly.
To conduct a continuous read operation in a nonvolatile memory device, a read command is given which includes a starting memory address. After allowing a period of time for internal read operations and address decoding, a first byte of data is available from the initial address given. If a redundant bit or bits are required, the read operation must incorporate any redundant memory bits used into a final data word before the data are output.
A drawback of reading continuously from prior sequential memories involving redundancy has been the amount of latency after a read command is entered until data are output. Access time is increased to accommodate reading redundant bits in addition to the bits of the original location. This is especially true when the number and cost of reading circuits is kept the same as a part without redundancy. The delay from read command input to data output degrades an efficiency of continuous read operations.
With reference to FIG. 1, a prior art nonvolatile memory 100 contains a memory array 105 including a plurality of bit memory blocks 115 organized in parallel to form data words. The memory array 105 also contains redundant bit memory blocks 117 that are incorporated when a faulty bit is detected.
An output of each bit memory block 115 connects to a corresponding position of a multiplexed register 122. Each bit memory block 115 is associated with two redundant bit memory blocks 117. Each redundant bit memory block 117 has an output connected to a corresponding location of the multiplexed register 122 at one of two additional positions per location. Each output of the multiplexed register 122 connects to an input of a sense amp register 120. Each output of the sense amp register 120 connects to a corresponding input location of a memory register 127. Outputs of the memory register 127 connect to a multiplexer (MUX) 133.
A clock generator 155 receives a clock signal from a serial clock (SCK) input 160. A serial data input (SI) 145 of the nonvolatile memory 100 connects to a controller 140. Commands, addresses, and data are received through the serial data input 145. The controller 140 provides control input to the clock generator 155, the multiplexed register 122, the sense amp register 120, the memory register 127, and an address decoder 150.
Three output lines of the clock generator 155 connect clocking signals, which are encoded to select one of eight possible values. A selection of the inputs to the multiplexer 133 is sequenced through under control of the signal values on the three clock output lines. An output of the multiplexer 133 connects to a serial output (SO) 135.
The controller 140 receives a continuous read command followed by three bytes of address information. The first two address bytes received determine a data byte location to the sector, block, and page level. After decoding the continuous read command, the controller 140 and address decoder 150 determine an initial memory location and connect the appropriate bit memory locations of the memory array 105 to the multiplexed register 122.
Locations requiring replacement of their contents by redundant memory 117 have been previously determined. With the initial memory location determined, the controller 140 compares the single memory location addressed with the previously determined locations requiring replacement of contents. A determination of a requirement for replacement of the initial memory location is made. If the initial memory location does not require replacement, a normal read operation occurs. If the initial memory location does require replacement, the entire location will be replaced by redundant memory.
After the determination of required replacement is made, the appropriate memory bits are read. The determination process may only begin after the location of the initial memory location is known. The initial memory location is known after complete address decoding. The time for complete address decoding and a determination of any replacement requirements means that dummy bytes may have to be inserted to an output stream of data for the device between the time the read instruction is received and the requested data can be output. In this way, the additional use of redundant memory may cause significant delays in receiving correct data.
For flash memories utilizing redundant memory bits, any increase in an amount of latency between the read command and data output is a significant impact to system efficiency. One desirable operation of flash memory would be to submit a continuous read operation command and have the data available in a normal amount of time regardless of whether redundant memory bits are incorporated or not.


An optical matrix switch according to the present invention includes plural demultiplexing and multiplexing light paths, plural optical switching devices each provided on a corresponding one of the plural demultiplexing and multiplexing light paths. The optical switching devices are controlled to be selectively turned on and off.

An optical matrix switch includes one or more optical switches provided on optical waveguides connected to plural light signal input terminals and plural light signal output terminals. In this optical matrix switch, a light signal supplied to one of the input terminals is transmitted to a selected light signal output terminal by controlling the switching operation of the optical switches.
One type of such an optical switch is an optical directional coupler which comprises, for instance, two optical waveguides having two input terminals and two output terminals, and control electrodes for applying an electric field across the optical waveguides, respectively, provided on an optoclectrical crystal substrate such as LiNbO.sub.3, LiTaO .sub.3, etc. In this optical directional coupler, the switching of a light signal supplied to one of the two input terminals is carried out to be obtained at one of the two output terminals by controlling a voltage applied across the control electrodes.
Another type of an optical matrix switch is described in a report "Wideband optoelectronic matrix switch" included in the technical material OQE80-90, 1980 of "The Institute of Electronics Informations and Communications Engineers". In this optical matrix switch, the signal switching is carried out at a position where a light signal is converted to an electric signal.
A further type of an optical matrix switch is described in a report "Study of tunable optical connection by matrix driving on VSTEP devices" included in the technical material OQE 89-77, 1989 of "The Institute of Electronics Information and Communications Engineers". In this optical matrix switch, the signal switching is carried out at a position where an electric signal is converted to an optical signal.
According to the above three types of the optical matrix switches, however, there are disadvantages as set out below.
In the first optical matrix switch, high fabrication precision is required to decrease cross-talk tending to occur in normal operation, and a control voltage is required to be as high as 40 to 50 V.
In the second optical matrix, an electric output signal is required to be converted to an optical signal so as to realize the switching of light to light.
In the third optical matrix switch, an optical input signal is required to be converted to an electric signal so as to realize the switching of light to light.
As a result, the optical matrix switches of the second and third types become large in size, and low in operation speed.