A method suitable for etching hydrophilic trenches into a substrate, such as silicon, is provided. The method comprises etching and sidewall passivation processes for achieving anisotropy. Sidewalls of the etched trench are made hydrophilic during the etch by virtue of a hydrophilizing dopant in a passivating gas plasma. The method is useful for etching ink supply channels in inkjet printheads.

The impact of MEMS (Microelectromechanical Systems) devices on the microelectronics industry has been extremely significant in recent years. Indeed, MEMS is one of the fastest growing areas of microelectronics. The growth of MEMS has been enabled, to a large extent, by the extension of silicon-based photolithography to the manufacture of micro-scale mechanical devices and structures. Photolithographic techniques, of course, rely on reliable etching techniques, which allow accurate etching of a silicon substrate revealed beneath a mask.
MEMS devices have found applications in a wide variety of fields, such as in physical, chemical and biological sensing devices. One important application of MEMS devices is in inkjet printheads, where micro-scale actuators for inkjet nozzles may be manufactured using MEMS techniques. The present Applicant has developed printheads incorporating MEMS ink ejection devices and these are described in the following patents and patent applications, all of which are incorporated herein by reference.
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Typically a MEMS inkjet printhead ("MEMJET printhead") is comprised of a plurality of printhead integrated circuits, with each integrated circuit having several thousand nozzles. Each nozzle comprises an actuator for ejecting ink, which may be, for example, a thermal bend actuator (e.g. U.S. Pat. No. 6,322,195) or a bubble-forming heater element actuator (e.g. U.S. Pat. No. 6,672,709). The integrated circuits are manufactured using MEMS techniques, meaning that a high nozzle density and, hence, high resolution printheads can be mass-produced at relatively low cost.
In the manufacture of MEMS printhead integrated circuits, it is often required to perform deep or ultradeep etches to depths of over 10 micron. A problem with deep etches, especially ultradeep etches, is maintaining anisotropy during the etch—that is, ensuring the trench is etched in a vertical direction, but not in a horizontal direction. Ideally, the sidewalls of the trench should be substantially perpendicular with respect to the surface of the substrate.
It is particularly important to have perpendicular sidewalls in ultradeep trenches when etching ink supply channels through silicon wafers. MEMS printhead integrated circuits require delivery of ink to each nozzle through either an individual or a common ink supply channel. These ink channels are typically etched through wafers having a thickness of about 200 micron, and therefore place considerable demands on the ultradeep etching method employed. It is especially important that each ink channel is substantially perpendicular to the wafer surface and does not contain kinks or sidewall projections (e.g. grassing), which can interfere with the flow of ink.
In the Applicant's U.S. patent application Ser. No. 10/728,784 and Ser. No. 10/728,970 , both of which are incorporated herein by reference, there is described a method of fabricating inkjet printheads from a wafer having a drop ejection side and an ink supply side. Referring to FIG. 1, there is shown a typical MEMS nozzle arrangement 1 comprising a bubble-forming heater element actuator assembly 2. The actuator assembly 2 is formed in a nozzle chamber 3 on the passivation layer 4 of a silicon wafer 5. The wafer typically has a thickness "B" of about 200 micron, whilst the nozzle chamber typically occupies a thickness "A" of about 20 micron.
Referring to FIG. 2, an ink supply channel 6 is etched through the wafer 5 to the CMOS metallization layers of an interconnect 7. An inlet 8 provides fluid connection between the ink supply channel 6 and the nozzle chamber (removed for clarity in FIG. 2). CMOS drive circuitry 9 is provided between the wafer 5 and the interconnect 7. The actuator assembly 2, associated drive circuitry 9 and ink supply channel 6 may be formed on and through a wafer 3 by lithographically masked etching techniques, as described in U.S. application Ser. No. 10/302,274, which is incorporated herein by reference.
Referring to FIG. 3, the ink supply channel 6 is formed in the wafer 5 by first etching a trench partially through the wafer 5 from the drop ejection side (i.e. nozzle side) of the wafer. (This trench will become the inlet 8, shown in FIG. 2). Once formed, the trench is plugged with photoresist 10, as shown in FIG. 3, and the ink supply channel 6, is formed by ultradeep etching from the ink supply side of the wafer 5 to the photoresist plug 10. Finally, the photoresist 10 is stripped from the trench to form the inlet 8, which provides fluid connection between the ink supply channel 6 and the nozzle chamber 3.
Alternatively, each ink supply channel may be configured to supply ink to a plurality of nozzles which all eject the same colored ink. This arrangement is illustrated in FIG. 4 and is described in detail in the Applicant's copending application Ser. No. 10/760,254 (Applicant Ref: RRC022), the contents of which is incorporated herein by reference.
In either of these ink supply channel configurations, the "back-etching" technique avoids filling and removing an entire ink supply channel with resist whilst nozzle structures in the wafer are being lithographically formed. Notwithstanding the problems of etching anisotropically to a depth of up to 200 micron, it is also desirable when etching ink supply channels to provide hydrophilic channel sidewalls. Optimum printing conditions in an inkjet printhead are generally achieved by having a hydrophobic nozzle face and hydrophilic ink supply channels. Hydrophilic ink supply channels ensure that the aqueous-based inkjet ink is drawn into the ink supply channels from a bulk ink reservoir. A hydrophobic nozzle face ensures the formation of discrete ink droplets when the ink is ejected from each nozzle and also minimizes surface flooding during printing.
Several methods for etching ultradeep trenches into silicon are known in the art. All these methods involve deep reactive ion etching (DRIE) using a gas plasma. The semiconductor substrate, with a suitable mask disposed thereon, is placed on a lower electrode in a plasma reactor, and exposed to an ionized gas plasma formed from a mixture of gases. The ionized plasma gases (usually positively charged) are accelerated towards the substrate by a biasing voltage applied to the electrode. The plasma gases etch the substrate either by physical bombardment, chemical reaction or a combination of both. Etching of silicon is usually ultimately achieved by formation of volatile silicon halides, such as SiF4, which are carried away from the etch front by a light inert carrier gas, such as helium.
Anisotropic etching is generally achieved by depositing a passivation layer onto the base and sidewalls of the trench as it is being formed, and selectively etching the base of the trench using the gas plasma.
One method for achieving ultradeep anisotropic etching is the "Bosch process" , described in U.S. Pat. Nos. 5,501,893 and 6,284,148. This is the current method of choice in commercial MEMS foundries and involves alternating polymer deposition and etching steps. After formation of a shallow trench, a first polymer deposition step deposits a polymer onto the base and sidewalls of the trench. The polymer is deposited by a gas plasma formed from a fluorinated gas (e.g. CHF3, C4F8 or C2F4) in the presence or in the absence of an inert gas. In the subsequent etching step, the plasma gas mix is changed to SF6/Ar. The polymer deposited on the base of the trench is quickly broken up by ion assistance in the etching step, while the sidewalls remain protected. Hence, anisotropic etching may be achieved. However, a major disadvantage of the Bosch process is that polymer deposition and etching steps need to be alternated, which means continuously alternating the gas composition of the plasma. This alternation, in turn, leads to slow etch rates and uneven trench sidewalls, characterized by scalloped surface formations. Plasma instability as the gas chemistry is switched also tends to exacerbate the formation of uneven sidewalls.
Moreover, the Bosch etch leaves a hydrophobic polymer coating on trench sidewalls. As discussed above, hydrophobic sidewalls are undesirable in fluidics applications, such as ink supply channels for inkjet printheads. Accordingly, in inkjet printhead applications, the Bosch etch is usually followed by a post-etch cleaning process, such as EKC wet cleaning, dry O2 plasma ashing or combinations thereof The post-etch cleaning process is intended to remove the hydrophobic polymer and leave channel sidewalls coated with SiO2. However, post-etch cleaning processes undesirably add to the number of fabrication steps and can also lead to their own inherent problems, such as wafer-cracking during EKC cleaning.
A modification of the cyclical Bosch process is described in U.S. Pat. No. 6,127,278, assigned to Applied Materials, Inc. In the Applied Materials process, a first passivation etch is performed using a HBr/O2 plasma, followed by a main etch using a SF6/HBr/O2 in alternating succession. The HBr enhances passivation, probably by formation of relatively nonvolatile silicon bromides in the passivation layer. However, the problem of hydrophobically coated sidewalls still remains with the Applied Materials process.
In order to avoid the cumbersome Bosch process, in which plasma gases need to be continuously alternated, anisotropic etching techniques were developed, which use simultaneous sidewall passivation. In such etching methods, a plasma mix is formed from a passivating component and an etching component. A typical plasma mix is formed from O2/SF6 with the addition of He as a carrier gas being highly recommended to enhance ion dispersement. The plasma mix simultaneously passivates and etches, which avoids the disadvantages of-the Bosch process. Nevertheless, it is the general view that mixing the gases gives less effective anisotropic etching, because the two processes tend to be self-cancelling. Accordingly, simultaneous sidewall passivation etching has been mostly confined to etching relatively shallow trenches. For ultradeep anisotropic etching, alternating passivation/etching is by far the most preferred technique.
One successful process for etching ultradeep trenches, which does not require alternating plasma gas mixtures, is the "Lam process" described in U.S. Pat. No. 6,191,043. In the Lam process, a passivating/etching plasma is formed from a mixture of O2, SF6, He and Ar—the O2 is a passivating gas; the SF6 is an etching gas; the He is a carrier gas; and the Ar is a bombardment-enhancing gas. Trench depths of up to 60 micron have been reported using the Lam process with acceptable etch rates. However, the process has not been used widely and etch depths of greater than 60 micron have not been reported.
None of the above-described etch processes can be used to etch trenches through a typical wafer to a depth of over 100 micron, whilst leaving hydrophilic sidewalls. Even when the etch process (or post-etch treatment) leaves SiO2-coated sidewalls, these SiO2-coated sidewalls are not particularly hydrophilic, having a contact angle of about 60°. Truly hydrophilic surfaces have contact angles of less than 50°, preferably less than 40° or preferably less than 30°.
It would be desirable to provide a new reactive ion etching process, which is capable of anisotropically etching ultradeep trenches of over 100 micron. It would be particularly desirable for the process to leave hydrophilic sidewalls after the etch, without the need for any post-etch hydrophilization treatments.

Method suitable for etching hydrophillic trenches in a substrate


A cushioning material for packaging is formed of a foldable and regenerable sheet, such as a corrugated cardboard or thick paper, and is used to protect an article of a rectangular cross-sectional shape packaged in an outer case. First and third frame members (1a, 1c) for forming a pair of parallel edge members of a rectangular frame, and second and fourth frame members (1b, 1d) for forming the other pair of parallel edge members of the same frame are provided, and the frame members (1a-1d) are formed of hollow bodies having a plurality of hollow portions (10) arranged in parallel, the contour and sizes of cross sections intersecting the hollow portions (10) being substantially equal. The hollow bodies constituting the frame members (1a-1d) are formed in a row by folding corrugated cardboard, thick paper or other foldable sheet, adjacent frame members among frame members (1a-1d) being connected to outer side sheet portions (11) positioned on the outer side, when the frame members (1a-1d) are assembled into a rectangular frame, the end portions of adjacent frame members out of the frame members (1a-1d) having joint structures (16) for combining the frame members together at right angles to each other with the outer side sheet portions (11) left as they are. Therefore, this cushioning material for packaging is rarely deformed, and displays an excellent cushioning effect.

In Japanese Patent Laid-open No. 8-58842, for instance, there is proposed a cushioning material for packaging making use of prismatic hollow bodies formed of a corrugated cardboard.
As shown in FIGS. 32 and 33, according to the cushioning material for packaging described in the above publication, the opposite end portions of a hollow body 6 of a square cross-sectional shape have parallel cuts 60, 61 intersecting one edge at a right angle, and an edge portion between the cuts 60, 61 has an incised portion incised in the manner of forming a plurality of symmetrical concave-convex portions 62, 63. In the body 6, two surfaces positioned with the edge between have flaps 66, 67 formed by forming folds 64, 65 to connect the opposite ends of the cuts 60, 61, and a step portion 60a is formed as shown in FIG. 33 by turning the flaps 66, 67 inward of the body 6, with the concave-convex portions 62, 63 meshed with one another.
This cushioning material for packaging is used such that the end of an article to be packaged is guided onto the stepped portion 60a and is then held therein when packaged in an outer case.
In FIG. 33, step portions 60a, 60a form a channel by combining a pair of bodies 6, 6 together to position the step portions 60a right and left, and the end of an article 4 to be packaged is guided to the inside of the channel formed by portions 60a, 60a and is then held therein when article 4 is packaged in an outer case (not shown).
Since the cushioning material for packaging proposed in Japanese Patent Laid-open No. 8-58842 described above is mainly formed of the hollow bodies 6, it has low density as a whole, but also has the following problems.
The first problem is that it is difficult to package the article 4 in the outer case together with the cushioning material for packaging, for the reason that the body 6 has only a single hollow of square cross sectional shape, so that each body 6 is easily deformed until constricted by the outer case after packaging the article 4 in the outer case.
The second problem is that only a very lightweight article can be packaged for the reason that the edges of the flaps 67, 67 constituting the bottom of the channel are connected to the flaps 66, 66 constituting the side walls only by meshing the plurality of concave-convex portions 62, 63 with one another, and a leg portion 68 in the center of the bottom of the channel mainly bears the load of the packaged article 4 so that the strength of the bottom flaps 67 is not sufficient when the above cushioning material is used in the state as shown in FIG. 33.
The third problem is that it is difficult to form the concave-convex portions 62, 63 using an automatic machining process after the hollow body 6 is formed in three dimensions. although the folds for forming the hollow body 6, the parallel cuts 60, 60, the concave-convex portions 62, 63 and the folds 64, 65 may be formed simultaneously with the process of cutting the sheet.


The invention provides a tobacco smoking apparatus that enables a person to smoke; namely, inhale and exhale smoke and other combustion products from burning tobacco, while isolating and protecting others from a substantial portion of the combustion products, including smoke, smoker's exhale, and odor, that are produced from smoking tobacco.

Smoke that is produced from a burning cigarette and that is exposed to people that are not inhaling from the burning cigarette, is referred to as second hand smoke. A smoker's exhale is that which is exhaled by a smoker of a burning cigarette. The second hand smoke, a smoker's exhale and associated odors are included within a set of the combustion products that are produced from the combustion of tobacco. Second hand smoke, the smoker's exhale and the associated odors and the other combustion products are generally believed to create negative health effects upon, and are generally considered a nuisance to, those people exposed to it.


A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

1. Field of the Invention
The present disclosure relates to an oxide semiconductor thin film and a method of manufacturing a thin film transistor (TFT) using the same, and more particularly, to a semiconductor thin film comprising ZnO and a method of manufacturing a TFT using the same.
2. Description of the Related Art
Thin film transistors (TFTs) using a semiconductor thin film are applied in various fields, and are often used as active devices for flat panel displays. Specifically, oxide semiconductor films, particularly, semiconductor films comprising ZnO, for example an amorphous gallium-indium-zinc-oxide (GIZO) semiconductor film, can be processed at low temperatures and can be easily made on a large scale. Also, since the semiconductor film comprising ZnO has a high mobility, the ZnO-based semiconductor film has good electrical properties like a polycrystalline silicon film.
However, carrier concentration in the ZnO-based semiconductor film is sensitive to changes in oxygen concentration, and the physical and electrical properties of the ZnO-based semiconductor film are greatly affected by both thermal and chemical treatments. When a TFT comprising a ZnO-based semiconductor film is manufactured, the ZnO-based semiconductor film is exposed to high-energy plasma and is thus subject to plasma-induced damage and thermal damage, thereby increasing the carrier concentration. The abnormal increase in the carrier concentration shifts the threshold voltage of the ZnO-based TFT to a larger negative voltage, such that a large leakage current flows between a source electrode and a drain electrode even when the gate voltage is 0 V. The leakage current is a critical problem in cases where the ZnO-based TFT is a back channel etch (BCE) TFT in which a SiNx passivation layer is formed on both the source and the drain electrodes, and where the ZnO-based TFT is an etch stopper TFT in which a channel layer is protected by an etch stopper and both the source and the drain electrodes are formed by etching.
In short, the damage to the channel layer resulting in the shifting of the threshold voltage, is related to an increase in the carrier concentration in the channel layer. Accordingly, there is a demand for a method of manufacturing a ZnO-based TFT having good electrical properties by controlling the carrier concentration.

Method of manufacturing ZnO-based thin film transistor


A container has a self-sustaining housing filled with a first sorbent body of compressed polyolefin microfibers, which body is formed with at least one pocket that snugly receives a vessel holding hazardous materials. The container is closed by a lid which is filled with a second sorbent body of compressed polyolefin microfibers, and when the lid is in place, the second body presses against the vessel to hold it snugly in place. At least a portion of the first sorbent body has a solidity of less than 20%, making it highly sorbent of liquids so that it can sorb any liquid that might leak from the vessel and thus help to prevent the liquid from escaping from the container.

1. Field of the Invention
The present invention relates to a container which is useful for shipping and storing hazardous liquids and other hazardous materials.
2. Background Information
Containers currently employed for transporting and storing hazardous liquids often have a cushioned pocket for each of one or more vessels that may be breakable, e.g., glass bottles. The container of coassigned U.S. Pat. No. 4,884,684 (Bernardin et al.) has a housing containing a resilient energy-absorbent cushion of aqueous fluid sorbent material that is formed with a plurality of pockets. Each pocket can receive a vial of hazardous or biological material. In the illustrated containers, the cushions may be sheets of nonwoven, fibrous polyolefinic (e.g., polypropylene) material such as disclosed in coassigned U.S. Pat. No. 4,118,531 (Hauser) and/or such as the universal sorbent sold under the trademark POWERSORB by Minnesota Mining and Manufacturing Co. One or more of the sheets are formed with openings for receiving the vials, and additional sheets that have no such openings cover those openings to complete the cushion which may have a percentage void volume available for sorbing aqueous fluid of between approximately 50 and 95 percent (which corresponds to a solidity between approximately 50 and 5 percent).
The container of U.S. Pat. No. 4,240,547 (Taylor) has tubular cavities for a number of test tubes and is formed with a central recess through which any leaking liquid should flow and an absorbent material filling that recess, the purpose of which is to absorb leaking liquid before it can escape from the container. Another multi-pocket design is shown in U.S. Pat. No. 3,621,994 (Brown). Some such containers have a single pocket that may contain sorptive material to prevent any leaking liquid from escaping from the container. See U.S. Pats. No. 3,999,653 (Haigh et al.); 4,560,069 (Simon); 4,573,578 (Greminger et al.); and 4,756,937 (Mentzer). The material of which the Mentzer container is made entraps "an antidote" with which leaking liquid can react to produce a gel. A large number of other containers are known that have one or more cushioned pockets for transporting liquid-filled vessels.

Impact resistant container for hazardous materials

Minnesota Mining and Manufacturing Company


A polycarbonate composition is disclosed comprising a polycarbonate resin, a 3-hydroxychromone dye, and an ultraviolet absorber selected from the group consisting of cyanoacrylates, malonates, and oxanilides. The combination of the 3-hydroxychromone dye and ultraviolet absorber results in a composition with good color retention and strong initial fluorescent emission intensity.

The present disclosure generally relates to a polycarbonate composition. The polycarbonate composition contains a covert additive which becomes visible upon application of ultraviolet radiation ("UV"). Also disclosed are methods for preparing and using the same.
Fluorescent dyes are commonly used as colorants for the coloration of polymers. They are also used to enhance or change color for design or safety purposes. Fluorescent dyes are soluble under processing conditions and are preferably completely dissolved, leaving no color streaks, little or no haze, etc. in the fabricated product. They also preferably exhibit good lightfastness and heat stability and are resistant to migration or sublimation.
Fluorescent molecules absorb light at one wavelength and emit light at another, longer wavelength. When fluorescent molecules absorb a photon of a specific wavelength, an electron in a given orbital rises to a higher energy level (the excited) state. Electrons in this state are unstable and will return to the ground state, releasing energy in the form of light and heat. This emission of energy in the form of light is fluorescence. Because some energy is lost as heat, the emitted light contains less energy and therefore has a longer wavelength than the absorbed (or excitation) light. The notable shift between excitation stimulus and emitted light is called Stokes shift. The Stokes shift is typically considered long when it exceeds 50 nm.
Some fluorescent dyes are also useful for authentication as a covert additive. In such a usage, the fluorescent dyes are invisible under typical lighting conditions, yet brightly colored when illuminated with ultraviolet light.
3-hydroxychromone dyes range in color from green to orange. Some can be used in engineering thermoplastic polymers, such as polycarbonates, if their thermal stability is adequate. However, 3-hydroxychromones dyes are generally reported to possess poor lightfastness such that over a short period of time, the compound photodegrades resulting in a loss of fluorescence.
3-hydroxychromone dyes are known in the art; see e.g. U.S. Pat. Pub. 2006/0131761 entitled "COMPOSITION, METHOD OF AUTHENTICATING, METHODS OF MAKING AUTHENTICATABLE COMPOSITIONS, AUTHENTICATABLE ARTICLES MADE THERE FROM", which is fully incorporated herein by reference. They are a subset of dyes having the general structure shown below:

wherein R1 is one of —O— or —NR6—;
R2 is selected from the group consisting of an aromatic radical having 3 to 30 carbon atoms, and a cycloaliphatic radical having 3 to 12 carbon atoms;
R3 is hydrogen or a labile group with the proviso that R3 is not a group selected from the group consisting of —CH2—(CH2)n—CH3 and —CH2—C6H5 wherein n has a value 0, 1, or 2;
R4 and R5 are either:                (i) independently selected from the group consisting of an aliphatic radical having 1 to 12 carbon atoms, an aromatic radical having 3 to 20 carbon atoms, a cycloaliphatic radical having 3 to 12 carbon atoms, a cyano group, a nitro group, a halo group, and a —OR7 group, wherein R7 is selected from the group consisting of hydrogen, an aliphatic radical having 1 to 12 carbon atoms, an aromatic radical having 3 to 20 carbon atoms, and a cycloaliphatic radical having 3 to 12 carbon atoms; or        (ii) together represent an aromatic radical having 3 to 12 carbon atoms, a heteroaromatic radical having 3 to 12 carbon atoms, or a pyranone radical of the formula
                wherein R8 is selected from the same options as R1, R9 is selected from the same options as R2, and R10 is selected from the same options as R3; and
R6 is selected from the group consisting of hydrogen, an aliphatic radical having 1 to 12 carbon atoms, an aromatic radical having 3 to 20 carbon atoms, and a cycloaliphatic radical having 3 to 12 carbon atoms.
When R1 is —O—, the structure is a 3-hydroxychromone. Hydroxy chromones typically have Stokes shifts greater than 100 nm, which are very long.
Some dyes in this class exhibit a color shift from a clear color to a visible color after exposure to UV radiation for a short period of time. This color shift occurs within several hours when exposed to both sunlight and xenon arc. The color shift is irreversible and the once covert additive is now visible to the viewer. Interestingly, this color shift only affects the color of the dye when viewed under typical lighting conditions; when stimulated with ultraviolet light, it still fluoresces, though with continued exposure fluorescence emission diminishes. While poor lightfastness is known for 3-hydroxychromone dyes, it is not generally associated with rapid photoyellowing (the creation of an absorbing chromophore).
One such dye which exhibits this color shift is BP-3-HF, a 3-hydroxychromone dye having the following formula:
BP-3-HF shifts from a clear color to a dark yellow-orange color after exposure to UV radiation for a short period of time. BP-3-HF is also known as 3-hydroxy-2-(4-biphenyl)-chromen-4-one.
Another such dye which exhibits this color shift is D-3-HF, a dye having the following formula:
D-3-HF shifts from a clear color to an amber color after exposure to UV radiation. D-3-HF is also known as 3,7-dihydroxy-2,8-diphenyl-4H, 6H-pyrano[3,2-g]chromene-4,6-dione.
Products are generally expected to retain their initial color when properly used. Because polycarbonates containing such dyes rapidly develop color upon UV absorption, and because the change in the color due to the color shift far exceeds the change in color due to resin photochemical degradation, commercial use of such dyes is highly constrained. Indeed, short-term exposure to sunlight during shipping/handling or to sunlight transmitted through window glass will likely provide sufficient energy to initiate photoyellowing.
It would be desirable to find a composition which allows for the use of such dyes, but provides good color retention and permits strong initial fluorescence emission intensity.


A laser annealing apparatus includes: a substrate supporting unit which supports a substrate; a laser beam irradiating unit which irradiates a line laser beam extending in a first direction to an amorphous silicon layer provided on the substrate on the substrate supporting unit; a substrate moving unit which moves the substrate supporting unit in a second direction crossing the first direction; and a first beam cutter and a second beam cutter, which are disposed between the substrate supporting unit and the laser beam irradiating unit, where the first and second beam cutters move to increase or decrease a shielded area of the substrate, which is an area of the substrate overlapping the first or second beam cutter and the line laser beam, to shield from at least a portion of the line laser beam irradiated to a portion of the substrate at an outer portion of the amorphous silicon layer.

1. Field
One or more exemplary embodiments relate to a laser annealing apparatus and a method of manufacturing a display apparatus by using the laser annealing apparatus, and more particularly, to a laser annealing apparatus capable of reducing a defect ratio in a manufacturing process, and a methods of manufacturing a display apparatus by using the laser annealing apparatus.
2. Description of the Related Art
In general, in an organic light-emitting display apparatus or a liquid crystal display apparatus, whether to emit light from each pixel or the amount of light emission of each pixel is controlled using a thin film transistor or the like, which is electrically connected to a pixel electrode of each pixel. The thin film transistor includes a semiconductor layer, and the semiconductor layer includes a polycrystalline silicon layer. Thus, when manufacturing a display apparatus, an amorphous silicon layer is converted into a polycrystalline silicon layer.
In a crystallization process as above, a laser annealing method is widely used, in which a laser beam is irradiated onto an amorphous silicon layer to convert the amorphous silicon layer into a polycrystalline silicon layer. The laser irradiated to the amorphous silicon layer is a line laser beam extending in one direction, and thus, the line laser beam may be irradiated a plurality of times onto the amorphous silicon layer while moving a substrate, on which the amorphous silicon layer is formed, to convert the amorphous silicon layer having a large area into a polycrystalline silicon layer.

Laser annealing apparatus and method of manufacturing display apparatus by using the same


An apparatus for overhead submerged arc welding having a pivotally mounted hopper containing flux and accommodating a bowl which has its open part facing towards a work being welded and communicating with a driven auger feeder for supplying and pressing the flux in the bowl and having a controlled drive. A welding nozzle extends through the bowl, and a former is provided above the brim of the open part of the bowl. A flux backing thickness pickup is connected to the controlled drive of the driven auger feeder for varying the number of revolutions of an auger of the driven auger feeder during a preset time period. The flux backing thickness pickup is mounted on a front edge of the bowl in the welding direction, adjacent to the longitudinal axis thereof, and is in the form of any eddy current transducer. By controlling the driven auger feeder, the apparatus monitors and keeps constant the preset flux backing thickness so as to supply a constant amount of flux to the bowl.. The invention is preferably used for welding long longitudinal and rotatable annular joints.

1. Field of the Invention
The invention relates to equipment for arc welding, and more specifically, it deals with an apparatus for overhead submerged-arc welding.
2. Description of the Related Art
A large number of operations are performed in the manufacture of welded structures with welding of rotatable annular welds of hollow products with a restricted access to joints being welded from the interior. Such joints include annular joints of closed vessels, annular joints of pipelines, tanks, casings, assembly welds, shell plating seams of ship hulls, and longitudinal welds of large-area products which it is difficult to place to a position facilitating welding. Such joints also include joints between difficult-to-position webs, segments, three dimensional and planar sections and other members.
The overhead submerged-arc welding method is characterized by the fact that a consumable electrode and welding bath are turned at 180.degree. in comparison with the downhand submerged-arc welding. Flux and electrode are supplied from bottom up, i.e. as though towards a ceiling. The electrode is supplied through compacted flux.
This is why this welding method will be referred to hereinbelow as overhead submerged-arc welding.
This welding method is referred to as the overhead submerged-arc welding also because arc is in the body of metal.
So called overhead welds are produced as a result of such welding.
Overhead welds and sealing overhead welds. There may also be one-pass overhead welds and other overhead welds.
The penetration overhead welds are the welds which are first to be produced in welding a joint and which are located in the top part of sections being welded, on the opposite side of the joint with respect to the electrode supply. Further welding of the joint, i.e. producing further welds, can be carried out by any appropriate knowns method, the electrode being supplied on the same side as was the case in producing the penetration overhead weld, e.g. producing inner penetration welds of rotatable annular joints of vessels, tanks, joints between bottom sections of shell plating of ships, and other structures.
The overhead submerged-arc welding of penetration welds mainly allows welding inside vessels in producing rotatable annular welds to be eliminated, and welding can also be avoided in confined spaces in producing straight welds of structures with an access on the side opposite to the ceiling.
The sealing overhead welds are the welds which are first to be produced in welding a joint and which are located in the bottom part of sections being welded on the joint side in the vicinity to the electrode supply. Further welding is carried out by any appropriate known method, the electrode being supplied on the opposite side of the joint as compared with the overhead welding.
In practice, the penetration overhead welds are produced in welding annular and longitudinal joints of structures with a restricted access to joints being welded from the interior.
The sealing welds are produced in welding elongated longitudinal joints of difficult-to-position products such as plate structures made out of segments and other members.
The one-pass overhead welds are the welds produced in welding joints of a limited thickness located over the whole welded section. No further welding of the joint on either side is required.
Many problems arise in producing sealing and one-pass welds in forming the surface of the finished weld.
The metal in the welding bath formed during arcing by fusion of the metal being welded, electrode material and welding flux is held by the crust of partly melted flux and by forming means. Forming means may be of various configuration and size and may be, e.g. in the form of plates, backings, bars, sliders and other members.
Flux is positively pressed against the welding spot from bottom, and as flux is consumed, its stock is continually replenished. Flux may be supplied for forming the top part of the weld either on the bottom side through the gap between the edges of welded members or from top by any appropriate known method so as to form a filled flux layer. Special forming backings or flux holders may also be used.
Special problems arise in welding joints of large-size cylindrical or like products such as ship hulls and boiler units where especially high quality of welds is required and where the product should be rotated about its axis during welding, and also in welding large-size planar members which it is difficult to place to a position facilitating welding.
Known in the art is an apparatus for overhead submerged-arc welding (SU, A, 1348111), comprising a hopper containing flux pivotally mounted on a pivot pin and accommodating a bowl having its open part facing towards a work being welded. The bowl communicates with a flux supply pipe having inlet and outlet ports, and an auger provided in the pipe and having a drive for supply flux to the bowl and pressing it against the work. A welding nozzle for supplying a consumable electrode extends through the bowl. The apparatus has a pair of copying wheels, one wheel being provided on the front part of the hopper in the welding direction and the other being aligned with a forming means. The hoper supports a welding head. The hopper is mounted on a pivot pin. The same pivot pin supports the other copying wheel and the forming means.
The apparatus is provided with means for turning the hopper about its pivot pin and a means for pressing the second copying wheel and forming means against the work being welded.
The forming means is provided in the vicinity to the nozzle to be extend above the brim of the open part of the bowl.
The pivot pin supporting the hopper, forming means and second copying wheel is mounted on a mounting arm provided on a carriage having means for pressing the forming means with the copying member against the work being welded, which comprises a power actuator for moving the carriage towards the work being welded.
The prior art apparatus is so constructed as to allow both absolute values of flux pressure in the bowl and force with which the forming means is pressed against the work being welded and the ratio between them to be varied.
This apparatus allows high-quality overhead submerged arc welding to be carried out with the desired forming of weld on either side in a broad range of process capabilities and with various types of products being welded.
However, as the forming means and the second copying wheel in this apparatus are mounted on one and the same pivot pin, the forming means is pressed away from the work in case of a substantial convexity of the joint being welded on the underside of the work. This results in a substantial change in position of an axis of oscillations of the hopper and copying wheel with respect to the surface of the work being welded. This change in position of the axis of oscillations of the hopper results in material fluctuations of preset pressures of flux in the bowl and at different points where welding bath is formed (upstream the arc, in the arc zone and in the welding bath zone and at the point of solidification of the welding bath), and in a disruption of welding as a whole, impairing quality of the welded joint.
In cases of a substantial concavity of the joint being welded on the underside of the work, the forming means is separated therefrom so that a substantial surplus space is formed between the working face of the forming means and the work to disrupt welding.
In addition, in welding products with geometry and assembly errors of joints, the clearance between the bowl and work fluctuates in the zone between the two copying wheels which are in contact with the work so as to result in a change in flux volume between the bowl and work thus causing fluctuations of flux pressure in the bowl and impaired welding quality as a whole.
Also known in the art is an apparatus for overhead submerged-arc welding (DE,C, 3430394), comprising a suspended pivotally mounted hopper containing flux and accommodating a bowl having its open part facing towards a work being welded and communicating with a flux supply pipe having inlet and outlet ports and an auger provided in the pipe having a drive for supplying flux to the bowl and pressing it against the work. The pipe, auger and drive for supplying flux to the bowl and pressing it against the work form a driven auger feeder. A welding nozzle for supplying a consumable electrode extends through the bowl. A copying member is provided adjacent to the welding zone and is engageable with the work surface during welding. A forming means provided adjacent to the welding nozzle above the brim of the open part of the bowl is mounted on a suspension for oscillations in its own longitudinal and transverse planes. The hopper is pivotally mounted on a mounting arm for rotation about its pivot pin.
The pivot pin supporting the hopper is mounted on the mounting arm which is movable in the direction towards the work being welded.
The same mounting arm supports the forming means and the copying member mounted on pivot pins.
The support pivot pin of the forming means is in the form of a point-like abutment at the end of an arm of a double-arm suspension lever of the forming means. The fulcrum of the double-arm lever is mounted on a mounting arm, the other arm of the lever being connected to a power actuator pivotally attached to the mounting arm. The copying member is in the form of a copying wheel and is mounted on the pivot pin supporting the hopper.
In another embodiment of this apparatus, the pivot pin supporting the forming means comprises a point like abutment at the end of a mounting arm located adjacent to the welding nozzle.
In this embodiment of the apparatus the copying member is in the form of projections on the face of the forming means, the pivot pin supporting the hopper is located on the side of the forming means remote from the nozzle, and the hopper is provided with a means for moving it with respect to its support pivot pin.
In this apparatus the mounting arm is mounted on a carriage which is mounted together with its drive on a driven trolley for moving the whole apparatus in the welding direction.
This apparatus allows permanent contact between the forming means and copying member and the work being welded to be ensured during welding with various assembly errors and deviations from geometry of the joint being welded (e.g., misalignment of plates edges, convexities and concavities, undulations, clearances, and the like).
Therefore, upon any change in position of the forming means during welding caused by an admissible change in profile of the surface of the work being welded at a point of their contact, the eventual action of the forming means upon position of the hopper containing flux is eliminated.
This facility makes it possible to prevent undesirable oscillations of the hopper upon changes in profile of the surface of the work and to stabilize such welding parameters as thickness of a flux backing and flux pressure in the welding zone.
The flux backing is an area of compacted compressed flux layer which has a preset pressure distributed over the whole area of the flux backing and which is located between the top part of the bowl facing towards the work being welded and the surface of the work being welded to exert a local pressure upon the surface of the joint being welded in the welding zone.
This construction of the apparatus provides conditions for a smooth copying of the surface of the joint being welded by the forming means without jerks and shakes which is necessary for maintaining stable preset values of flux pressure acting upon the welding bath and upon zones in which the welding bath is formed along the joint being welded.
The construction of the prior art apparatus also provides conditions for a smooth copying surface of the joint being welded by the forming means and for adjusting position of the hopper with respect to the work being welded which is necessary for carrying out welding of products of different geometry.
In this apparatus, a change in position of the forming means during welding which occurs because of errors of geometry and assembly of the joint being welded does not cause a change in position of the pivot pin supporting the hopper with respect to the surface of the work being welded.
In welding with such an apparatus, owing to the creation and maintenance at a constant level of preset flux pressures at various points along the joint being welded (upstream the arc, in the zone of the arc and welding bath and in the zone downstream the welding bath and up to the formed weld), the possibility of automatic conduct of welding of overhead welds and production of high-quality welded joints is ensured.
This apparatus makes it possible to carry out welding with a desired formation of weld reinforcement on either side of the weld over a broad range of process capabilities with a wide range of welded products and with large errors of assembly of joints before welding (misalignment of plates edges, undulations, convexities and concavities, taper of bottom in welding annular joints, e.g. in boilers and railway tanks, and the like welded structures).
Investigations showed that the flux backing thickness (the space between the surface of the outlet port of the bowl and the surface of the joint being welded filled flux) should be kept constant during automatic overhead submerged-arc welding during the entire welding period. This is required to provide conditions during welding for the maintenance of constant preset flux pressures at various points along the joint being welded (upstream the arc, in the zone of arc and welding bath and in the zone of solidification of the weld) and for retaining the welding bath at the level of the joint being welded.
In the above described apparatus, flux which is supplied during welding by means of a non-controlled driven auger feeder moves along a close-loop circuit: supply of preset amount of flux through the supply pipe with an auger from the hopper to the bowl and spillage back of unfused flux that did not participate in welding from the bowl with subsequent supply thereof during the next cycle.
Flux is comminuted (flux grading composition changes) after each cycle of its movement so as to result in compaction of flux as shown by investigations, hence, in a lower throughput capacity of the auger feeder (reduction of the amount of flux supplied by the auger to the bowl per unit of time), hence, in a decrease in the flux backing thickness.
However, in welding elongated joints at a constant speed, i.e. in applications where multiple cycles of passage of flux through the auger feeder occur with multiple comminution of the flux, the prior art apparatus cannot maintain the preset flux backing thickness at a constant level. The flux backing thickness decreases because of comminution of flux and associated reduction of its particle size as the weld length, hence number of recycles of flux increases. In addition, in welding with such an apparatus of long welds with a varying welding speed, the flux backing thickness varies upon variation of the welding speed.
Such changes in the flux backing thickness result in fluctuations of preset flux pressures at various points along the joint being welded during welding, impair welding quality and disrupt the process as a whole.
In such cases, welding should be interrupted, and the apparatus stopped. The comminuted (pulverulent) flux should be replaced with fresh flux having an optimum grading composition. After replacement of the flux, the end crater of the weld should be repaired, and only after that can welding of the long joint continue. Quality of welding of such joints is impaired because of stoppages, repaired portions and other defects.
In addition, this apparatus does not allow a preset flux backing thickness to be set up or varied if necessary in welding long joints (e.g. in welding structures with different thicknesses of plates along one and the same joint, e.g. in the manufacture of railway tanks and other products), nor does it allow flux to be rapidly replaced by another grade or type of flux (fine-grained, ceramic, and the like) during welding at a constant or varying welding speed and with the employment of an arc auger drive (constant speed motors which are generally used under heavy-duty industrial operating conditions).
On the other hand, when a d-c drive is used for driving auger in this apparatus (with a speed control), the flux backing height can be controlled during welding of long joints. This control in the prior art apparatus can, however, be only affected by way of visual monitoring with measurement of the actual thickness of the flux backing during welding at regular intervals, comparison thereof with a preset value and manual variation of the auger speed, e.g. by means of potentiometers in the d-c motor control circuit in the auger rotation drive so as to maintain the preset thickness of the flux backing. This adjustment and maintenance of the flux backing thickness cannot ensure a guaranteed quality in producing overhead welds since operation depends on skill and experience of the operator and calls for a permanent involvement of the operator in welding process.
Overhead submerged-arc welding process becomes more difficult, and quality of welded joints is impaired in all such cases.
Therefore, in order to enhance and facilitate welding process in welding at a constant and varying speed in carrying out the overhead submerged-arc welding and to ensure the production of high-quality welds of a constant quality along the entire joint being welded, it is necessary to carry out automatically an increase in flux supply to the welding zone (to the bowl) upon every close-loop cycle of the flux movement, and flux supply to the bowl should also be changed upon every change in welding speed so as to ensure a constant flux supply rate to the welding zone.
This operation with a constant flux supply rate to the bowl ensures the maintenance of a constant preset flux backing thickness necessary for a high-quality overhead welding in welding long joints at a constant or varying speed.

Apparatus for overhead submerged-arc welding

ulitsa Krasnoarmeiskaya 145, korpus 4, kv. 148


A Fin-FET device is provided. The Fin-FET device includes a semiconductor substrate, a fin structure formed on the semiconductor substrate having a core region and two peripheral regions separated by the core region; a plurality of metal gate structures formed across the fin structure in the core region and covering top and sidewall surfaces of the fin structure; a barrier structure formed in each peripheral region across the fin structure and covering top and sidewall surfaces of the fin structure; a plurality of source/drain regions formed in the fin structure between each barrier structure and a neighboring metal gate structure and between neighboring metal gate structures; and a first interlayer dielectric layer formed at least on the fin structure. The first interlayer dielectric layer covers sidewall surfaces of the metal gate structures and the barrier structures.

Metal-oxide-semiconductor (MOS) transistor is one of the most important components in modern integrated circuits (ICs). The base structure of a MOS transistor includes a semiconductor substrate, a gate structure formed on the surface of the semiconductor substrate, and a source region and a drain region formed in the semiconductor substrate on the two sides of the gate structure. In addition, the gate structure includes a gate dielectric layer formed on the surface of the semiconductor substrate and a gate electrode layer formed on the gate dielectric layer.
With the development of semiconductor technology, the feature size of semiconductor devices continuously decreases, and the controllability of traditional planar MOS transistors on channel current tends to be insufficient, causing severe leakage current. Fin field-effect-transistor (Fin-FET) is an emerging multi-gate device. Generally, a Fin-FET includes a fin structure protruding from the surface of a semiconductor substrate, a gate structure covering a portion of the top and the sidewall surfaces of the fin structure, and a source region and a drain region formed in the fin structure on the two sides of the gate structure.
However, the electrical performance of the Fin-FETs fabricated by existing methods may still need to be improved. The disclosed Fin-FET devices and the fabrication methods are directed to solve one or more problems set forth above and other problems in the art.

Semiconductor Manufacturing International (Shanghai) Corporation

Semiconductor Manufacturing International (Beijing) Corporation


A code lock is revealed. The code lock includes a housing, a return base, a plurality of locking seats, a fixed seat, a moveable seat, a code seat, a plurality of code members and a housing base arranged sequentially from top to bottom. A press button corresponding to each locking seat is disposed on the housing and each locking seat has at least one tooth that locks with a hook of the return base when the press button is pressed to push the locking seat. A stopping block is arranged at the bottom of each locking seat while the code member is set with a code post correspondingly. Moreover, the moveable seat includes a code area and a non-code area for mounting the code member and the code seat has a plurality of C-shaped holes corresponding to the code members. Thereby a simple-structured and easy-operated code lock is formed.

1. Fields of the Invention
The present invention relates to a code lock, especially to a code lock that can be set code by users themselves and with features of easy operation and simple structure.
2. Descriptions of Related Art
The applications of locks are quite accessible today. For example, channel gates, doors, personal closets, safe deposit boxes, vehicles and so on, are arranged with locks so as to manage the opening and closing of the objects by specific staffs or owners. According to different applications, the locks are divided into various types such as key locks, code locks, etc. The key locks are opened and closed by keys, the code locks are opened and closed by input code, and so forth.
The so-called code lock can be set a new code each time the user uses it and the code can be changed as often as required. Thus it's difficult for burglars to break the code and the code locks are quite popular.
There is still a space for improvement of the code lock. Thus a code lock with features of simple structure and easy operation is provided.


‘WAYNE’ is a new and distinct southern highbush blueberry (Vaccinium corymbosum L.) variety distinguished at least by a low chilling requirement, particularly for the flower buds; a vigorous, upright growth habit; good field disease resistance; earlier fruit ripening; and firm, sweet fruit that are medium to large in size and have small, dry picking scars.

The present invention relates to a new and distinct hybrid variety of southern highbush blueberry (Vaccinium corymbosum L.) named 'WAYNE'. 'WAYNE' is a blueberry clone that can be distinguished at least by its low chilling requirement, particularly for the flower buds; good field disease resistance; and vigorous, upright growth habit. 'WAYNE' can also be distinguished at least by its berries that are medium to large in size, firm, and sweet. When grown in North-central Florida, 90% of the fruit are normally harvested between April 5 and May 5. 'WAYNE' has been asexually propagated by softwood stem cuttings in Gainesville and Waldo, Fla., and the resulting plants have all been phenotypically indistinguishable from the original plant.
'WAYNE' originated as a seedling from a cross between 'FL03-73' (unpatented) as the female (seed) parent and 'JEWEL' (U.S. Plant Pat. No. 11,807) as the male (pollen) parent. This cross was made in Gainesville, Fla. in February, 2003. The seedling was planted in a high-density field nursery in May, 2004, and the first fruit were evaluated in April, 2005. 'WAYNE' was first asexually propagated in Gainesville, Fla. by softwood stem cuttings in 2006. After the second year of fruiting in the field, in the spring of 2006, 'WAYNE' was propagated by softwood stem cuttings, and an experimental 15-plant test plot was established as part of a variety test at Windsor, Fla., in January, 2007. At this time, the experimental code 'FL06-354' was assigned to 'WAYNE'. Based on the growth, early yield, and fruit quality of this plot, 'WAYNE' was propagated by softwood stem cuttings and additional experimental test plots ranging from 5 to 45 plants were established in experimental research trials across Florida. These plots have been observed during flowering and ripening each year, and no mutations or off-type plants have been observed.
'JEWEL', is an important southern highbush blueberry variety that has been planted throughout the southeastern United States. 'WAYNE' exhibits a plant architecture that is similar to that of 'JEWEL', but with distinguishably less spreading. The leaves of 'WAYNE' are smaller in length and width compared to that of 'JEWEL'. Also 'WAYNE' produces earlier and firmer fruit than 'JEWEL'. 'WAYNE' also has higher early fruit yield than 'FL03-73', its female parent.
'WAYNE' is most similar to the southern highbush blueberry plant named 'Scintilla' (U.S. Plant Pat. No. 19,233). 'WAYNE' and 'Scintilla' are distinguishable at least in their flower arrangement and flower bud densities. Specifically, 'Wayne' exhibits flowers arranged alternately along a branch with leaves and exhibits high bud density. In contrast, 'Scintilla' exhibits flowers arranged alternately along a short, leafless, deciduous branch and exhibits medium bud density. Additionally, 'WAYNE' berries exhibit tight clusters, while 'Scintilla' berries exhibit loose clusters.


A method of modifying stress characteristics of a membrane in one embodiment includes providing a membrane layer, determining a desired stress modification, and forming at least one trough in the membrane layer based upon the determined desired stress modification.

The manufacture of micromechanical electrical system (MEMS) such as pressure sensors and other devices incorporating a membrane poses serious challenges because of the sensitivity of the devices. Typically, the devices which are made of silicon, (polysilicon or silicon-germanium) must exhibit low stress values or predetermined stress values along with low or specific stress gradient properties. Stress reduction is accordingly typically achieved during a stress/stress-gradient relief step during a high temperature annealing process.
MEMS devices however, can be very complicated devices with a number of mechanical parts that are integrated with other permanent and/or temporary (sacrificial) materials. The integrated parts may exhibit detrimental interactions due to the thermal budget. Thus, subsequent annealing steps could affect the layers previously deposited/annealed and therefore modify the film stress and stress gradient values of the devices. Thus, the timing and manner in which stress relief is accomplished must be carefully planned. This adds complexity and costs to the manufacturing process.
Various attempts have been made to control stress in the prior art. Some of those attempts include development of specialized films. While effective at reducing stress, these films suffer various shortcomings such as lack of conductivity, roughness, and irregular electrical properties. Other approaches include the use of doping or specific atmosphere control while depositing films. These approaches affect the chemical composition of the films.
What is needed, therefore, is a simple and effective approach to modification of stress characteristics within a membrane. A further need exists for an approach to modification of stress characteristics within a membrane that does not alter the chemical composition membrane.

Method of forming membranes with modified stress characteristics


An apparatus for flash photolysis has a light source and an optical fiber for directing light from the light source and through a sample. A laser or other such device is provided for initiating a chemical change within the sample. Additionally, a device is provided for determining the change in absorption of light by the sample during the chemical change.

The present invention relates to the field of laser flash photolysis, and in particular, the present invention provides a novel miniaturized laser flash photolysis system, with improved performance over existing laser flash photolysis systems.
Laser flash photolysis (LFP) is a technique utilized to study reaction mechanisms in chemical and biological processes. The technique was introduced in 1966 by Lindqvist at the CNRS in France and quickly developed by various research groups around the world. FIG. 1 shows a schematic drawing of this original set up. It can be regarded as a technical development of what is now called xe2x80x9cconventional flash photolysisxe2x80x9d. The development was brought about by the invention of the laser, in the early 1960s.
The technique of LFP, as it has been utilized for the last twenty years (FIG. 2), consists of a pulsed laser source that generates the chemical species to be studied, an optical and electronic system capable of sensing optical changes in the sample, and a computer suitably equipped to capture, process and display the data.
The optical and electronic system mentioned above are the heart of any LFP system. They essentially constitute a fast spectrometer capable of acquiring spectra of very short lived chemical species called xe2x80x9cintermediatesxe2x80x9d, and recording their evolution with time, that is, their kinetics. The present invention deals specifically with this part, and can be used with most modem pulsed lasers. Moreover, in order to measure kinetics only, a spectrometer is not required, or the instrument can be used at a fixed wavelength setting.
LFP techniques have evolved over the years to include time resolutions as short as femtosecond (10xe2x88x9215 seconds). The invention described here refers to systems with nanosecond resolutions, which usually use lasers with pulse durations between 1 and 20 ns, although the concept is not restricted to this time scale. The detection components of such an LFP system are based on commercial photomultiplier tubes (PMT) and have adequate responses from about 1 nanosecond to macroscopic time scales, although LFP systems are rarely utilized in time scales longer than 1 second.
The term LFP usually refers to the optical and electronic components mentioned above, and practitioners of the technique understand that in addition to the LFP system, a functional instrument also requires a pulsed laser and a computer. Modem LFP systems have a typical footprint of 10 square feet, frequently slightly bigger; this footprint is exclusive of space taken by the laser and the computer. The LFP system is normally mounted on an optical table, or a solid and firm table; such an LFP system is not portable. Transportation normally involves taking apart dozens of components which need to be reassembled, reconnected and properly aligned following any move.
The invention consists of the development of a new miniature laser flash photolysis system (mLFP) which represents a major improvement over existing apparatus. Three aspects of this new mLFP system are important in this regard:
(i) A great reduction in the overall size of the instrument, which has a footprint of less than 2 square feet.
(ii) In contrast with all existing systems, the new set-up is readily portable. It consists of integrated components in an enclosure with a footprint of 12 inches by 18 inches, plus a small digitizer which connects to the enclosure mentioned above and the computer.
(iii) By incorporating an innovative optical design around the sample holder, the new mLFP system does not require xe2x80x9cpulsingxe2x80x9d the monitoring lamp and is virtually insensitive to scattered light and fluorescence. Scattered light and fluorescence represent major problems in prior LFP methods;
(iv) The instrument lends itself easily to remote sensing, by taking advantage of optical fibers of variable length.
In a broad aspect, then, the present invention relates to an apparatus for flash photolysis including: i) a source of light radiation; ii) optical means for channeling light from said source through a sample; iii) means to initiate a chemical change in said sample; iv) means for measuring the change in absorption of said light radiation by said sample during said chemical change.


A recording apparatus that has a control unit, a storage unit and a recording unit. The recording unit is configured to record television signals representing programs onto storage device. If a partially recorded program is stored on storage unit, the apparatus is configured to subsequently record and store a full recording of that program. The control unit is configured to insert markers into the full version of the program to indicate the position or positions of the delayed start and/or premature end of the partial recording. The partial recording can thus be deleted from storage unit, but the user of the recording apparatus can still identify the delayed start point and/or premature end point of the partial recording from the full recording.

1. Field of the Invention
The present invention relates to the storage of recorded television signals representing programs, and in particular to the management of stored television signals representing programs.
2. Description of the Related Art
If a recording of a program is only partially complete, then it is often desirable to record a repeated version of that program so as to have the full version recorded. Some presently available recording devices are capable of automatically recording a repeated version of a program which has previously been partially recorded. In such a presently available apparatus, once recording of the repeated, full version of the program has been completed, both the original partial recording and the repeated full recording of the program are stored. This has several disadvantages associated with it. For example, enough storage space is required to store both the partial recording and the full recording. By way of further example, the user of such a recording device would be presented with two versions of the program for watching, which is potentially confusing and it could be difficult to determine which of the two versions to watch back.
It may be possible for the user of such a recording device to manually delete one of the recordings in order to save storage space and reduce subsequent confusion as to which version represents which recording. For example, the partial recording could be deleted. However, this is undesirable because it can be useful to be able to watch both the full recording and the partial recording. For example, one user of such a recording apparatus may have missed the entire broadcasting of the program, and therefore wish to view the full recording, whereas another user of the recording device may have seen the first part of the program, and then initiated recording, such that they only wish to view the partial recording. If either of the two recordings were deleted, then viewing of both the full version and the partial version would be extremely difficult. For example, if the partial version were deleted, then a user wishing to view only the partial version would then be required to scan through the full version manually to the point at which the partial version started.


The present invention provides a pressure sensor. The pressure sensor comprises a substrate with several support structures attached to the substrate. The pressure sensor further includes a strut structure integrated with a heating element. The strut structure is engaged with the support structures so as to create an air gap between the heating element and the substrate. The heating element has an electrical resistance proportional to changes in air pressure in the air gap.

Pressure sensors can be used to measure pressure variations in air as well as any other gas. The pressure variations in a sample gas are measured against known values of pressure variations in air. These pressure variations are an important parameter in determining various properties of the sample gas. Pressure sensors that measure such pressure variations find widespread application in areas such as industrial process control, automobile engine monitoring and various biomedical processes.
One widely used technique for measuring pressure variations is the 'hot-wire' technique. Pirani gauges employ this technique for measuring pressure variations in air. Pirani gauges operate by heating a wire by passing current through it, and monitoring the resulting changes in the resistance of the wire. The resistance in the wire is a function of the wire temperature, and the wire temperature is a function of the cooling rate of the wire, which in turn is a function of the ambient pressure. Thus, changes in resistance of the wire are measured in order to determine the changes in pressure. However, thermal conductivity of air is almost constant from atmospheric pressure to around 10 mBar. Hence, the pirani gauge is only useful for measuring pressure variations below approximately 10 mBar.
Another technique used to sense pressure variations uses a silicon based pressure sensor. The two commonly used types of silicon-based pressure sensors are piezoresistive and capacitive pressure sensors. Both the piezoresistive and capacitive pressure sensor uses a thin silicon diaphragm, which is fabricated by anisotropic etching of a thicker silicon substrate. In the piezoresistive pressure sensor, pressure variations in one side of the diaphragm results in a flexure, which is directly proportional to the applied pressure. The piezoresistive type of pressure sensor relies on stress-induced changes in the resistivity of diffused resistors in the diaphragm. The capacitive sensor relies on capacitive variations between the diaphragm and a metal plate, which is placed parallel and close to the diaphragm. Further, both types of the pressure sensors require the silicon chip attached to the metal plate to hermetically seal the chamber on one side of the diaphragm. However, the requirement of hermetic sealing increases the cost of the pressure sensor as the sealing is performed on an individual chip rather than on a complete wafer level.
Another type of pressure sensor employs the concept of ionization to sense pressure variations. The ionization gauge involves a heating filament that emits electrons which ionizes gas molecules. An ion collector then captures the ions. The amount of gas molecules available to be ionized decreases as the gas pressure decreases. This ultimately results in lesser ions to be received by the ion collector. However, the ionization gauge is effective only at low pressures (around at 0.00013 mBar). Further, several devices and electrical connections required by the ionization gauge burn out at atmospheric pressures.
One or more of the above-mentioned pressure sensors suffer from at least one disadvantage. Hence, there is a need of a pressure sensor that is operable in the pressure ranges below the atmospheric pressure. Further, the pressure sensor should have a good sensitivity and resolution to the pressure variations. Also, there is a need of significant cost reduction in the fabrication of the pressure sensor with respect to the available techniques.

International Business Machines Corporation


An analog-to-digital converter (ADC) includes an analog input stage including an output configured to generate an analog output signal and a digital stage coupled the output of the analog input stage. The digital stage is configured to classify the analog output signal into one of a plurality of consecutive voltage ranges. Responsive to the analog output signal being classified in a first enumerated voltage range of the plurality of voltage ranges during a rotation of a sample, a voltage for a subsequent rotation is determined as if the analog output signal is classified into a non-enumerated voltage range selected according to a state of a random number signal.

An analog-to-digital converter (ADC) includes one or more analog stages and one or more digital stages. The analog stage is configured to provide a fixed amount of gain to received analog signals to be converted to digital form. The digital stage, using the known gain of the analog stage, compares the analog signals with known reference voltages, decodes the results, and generates output samples.
Any variation in the amount of gain that is provided by the analog stage can result in errors and/or non-linearity in the samples that are output from the digital stage of the ADC. Unfortunately, gain in the analog stage can vary for a variety of different reasons including temperature, process variations inherent in integrated circuit manufacturing processes, less than ideal performance of electronic components such as amplifiers, and the like.
In some cases, to accommodate for variations in the gain of the analog stage of the ADC, the ADC is taken offline (rendered inoperable) for periods of time during which calibration is performed. The ADC is unusable for the entire time in which calibration is performed. In other cases, changes to the signal path of the ADC, e.g., changes to the capacitive elements in the signal path, are introduced to compensate for gain variation. The changes, however, may not be desirable in terms of overall performance of the ADC.

Background calibration scheme for analog-to-digital converters


A packet network device includes a packet network processor memory system for storing information used to process and forward packets of information in and through the network device. The information is included in look-up tables whose entries can be mapped either horizontally or vertically into the memory system. In the event that the entries are mapped horizontally, a complete entry can be access at a single memory location and in the event that the entries are mapped vertically, the entries can be accessed at one or more memory locations.

1. Field of the Invention
The present disclosure relates generally to packet network packet processors, and more particularly to memory systems and access methods for such processors.
2. Description of Related Art
Data packets (also called "frames" in some scenarios) placed on a packet-based network generally pass through one or more packet switches and/or routers as the packets traverse between the packet source and packet destination(s). Each switch/router receiving such a packet examines one or more headers on the packet to decide what processing tasks must be performed on the packet, and the appropriate egress interface(s) that the switch/router should use to forward the packet toward its destination(s). It is desirable that each switch/router process packets quickly, so as to reduce packet latency and avoid having to drop packets.
High-performance packet routers and switches use dedicated packet network packet processors to handle packets. FIG. 1 depicts a simplified view of a system 100 including a packet processor 110. Ingress buffers (not shown) internal and/or external to packet processor 110 queue packets received by one or more switch/router interfaces and awaiting processing by the packet processor. Egress buffers (also not shown) internal and/or external to packet processor 110 hold packets subsequent to processing by the packet processor and queued for forwarding out an appropriate switch router interface or interfaces.
Packet processor 110 typically must handle packets from many different source/destination pairs, and packets of many different types. Depending on these variables, different packets require different lookups and different processing. Lookup information is stored in tables in a memory accessible to the packet processor, e.g., memory 120 made up of two memory devices 120-0, 120-1. Each memory device can be one of the familiar solid-state memory device types, such as a Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), Flash memory, etc. In FIG. 1, each memory device is a 1 Mb×72-bit SRAM. Packet processor supplies an address signal to memory devices 120-0, 120-1 over 20 address lines A[0:19] (well-known control signals are also supplied over separate command lines, not shown). Data passes between each memory device and packet processor 110 over 72 dedicated data lines (DQ[0:71] and DQ[72:143] for memory devices 120-0 and 120-1, respectively). Thus in operation, devices 120-0 and 120-1 appear as one large 144-bit-wide memory. Various tables needed for packet processor operation are stored in different partitions of the memory.
The prior art packet processor/memory configuration is limited in the manner in which table information can be retrieved. For instance, if five tables must be accessed to retrieve five types of information for processing a packet, five separate accesses are required. For line rate processing of small packets, packet processing requiring many table read operations can quickly overwhelm the memory system, resulting in delays and undesired packet dropping to avoid buffer overflow.

System and method for flexible memory system configuration and access


A method for producing a polyorganosiloxane resin composition including: (a) mixing a thermally-conductive filler having a particle size distribution having a single peak, with a surface treatment agent containing a siloxane to form a mixture, and (b) mixing the mixture from step (a) with a polysiloxane resin.

In electronic parts, such as a power transistor, an IC, and a CPU, for preventing accumulation of heat caused due to electrical heating elements, a thermally conductive grease and a thermally conductive sheet having high thermal conductivity are used. The thermally conductive grease has an advantage in that it can be applied with ease to electronic parts irrespective of the shapes of the electronic parts, but has problems, for example, in that the grease stains or breaks other parts and in that an oil component oozes out of the grease. The thermally conductive sheet does not stain or break other parts or cause an oil component to ooze; however, the sheet has poorer adhesion than the grease, and therefore, in order to improve the adhesion of the thermally conductive sheet, a method of reducing the hardness of the sheet is employed.
Silicone rubbers are widely used in the thermally conductive sheet. Silicone cannot enhance the thermal conductivity by itself and therefore, for improving the silicone rubber in thermal conductivity, a thermally conductive filler and the silicone rubber are used in combination. It has been known that, as a thermally conductive filler, a material having higher thermal conductivity than that of a silicone as a binder, such as a silica powder, alumina, boron nitride, aluminum nitride, or magnesium oxide, can be added (JP2002-003831A). For obtaining a silicone composition having higher thermal conductivity, it is necessary to more highly fill the composition with a thermally conductive filler, but the filling property of the filler has a limitation, and therefore a filler which has been subjected to surface treatment is used (WO2005/030874 A1).
As a production method for obtaining the above-mentioned silicone composition, various methods having a surface treatment for a filler have been known (see, for example, JP2005-023246A), and there have been employed a method called an integral blend method, in which all the components are mixed together at a time to obtain a resin composition (JP2001-189407A), and a solvent substitution method in which a filler is dispersed in a solution having a surface treatment agent dispersed in a solvent so as to uniformly subject the filler to surface treatment, and then the solvent is removed (JP2010-150321A).

Method for producing a thermally conductive polysiloxane composition

MOMENTIVE PERFORMANCE MATERIALS JAPAN LLC


Described herein are various embodiments of an apparatus, a system, and a methods for reducing NOx emissions using ammonia storage on an SCR catalyst. For example, according to one embodiment, an apparatus for controlling an SCR system of an internal combustion engine system includes an ammonia storage module and a reductant dosing module. The ammonia storage module determines an ammonia storage surface coverage on an SCR catalyst of the SCR system and an ammonia compensation value based on one of an excess ammonia flow rate entering the SCR catalyst and an excess NOx flow rate entering the SCR catalyst. The reductant dosing module that generates a reductant dosing command based on the ammonia compensation value.

Exhaust emissions regulations for internal combustion engines have become more stringent over recent years. The regulated emissions of NOx and particulates from internal combustion engines are low enough that in many cases the emissions levels cannot be met with improved combustion technologies. Therefore, the use of aftertreatment systems on engines to reduce harmful exhaust emissions is increasing. For reducing NOx emissions, NOx reduction systems, including selective catalytic reduction (SCR) systems, are utilized to convert NOx (NO and NO2 in some fraction) to N2 and other compounds. SCR systems utilize a reductant (e.g., diesel exhaust fluid (DEF), typically ammonia, and an SCR catalyst to convert the NOx. Currently available SCR systems can produce high NOx conversion rates allowing the combustion technologies to focus on power and efficiency. However, currently available SCR systems also suffer from several drawbacks.
Most SCR systems generate ammonia to reduce NOx present in the exhaust gas generated by the internal combustion engine. When just the proper amount of ammonia is available at the SCR catalyst under the proper conditions, the ammonia is utilized to reduce NOx. Due to the undesirability of handling pure ammonia, many systems utilize an alternate compound such as urea, that vaporizes and decomposes to ammonia before entering the SCR catalyst. Many SCR systems that utilize urea dosing to generate ammonia depend upon the real-time delivery of urea to the SCR catalyst as engine NOx emissions emerge. Urea dosers have relatively slow physical dynamics compared to engine transients, such as mass flow, temperature, and emissions. Therefore, urea doser dynamics can substantially affect an SCR controls system, particularly during transient operating conditions. For example, based on the operating conditions, the urea dynamics may result in an excess of ammonia causing ammonia slip out of the SCR catalyst or a deficiency of ammonia causing excess amounts of NOx entering the atmosphere.
Some currently available SCR systems account for the dynamics of the urea dosing and the generally fast transient nature of internal combustion engines by utilizing the inherent ammonia storage capacity of many SCR catalyst formulations. Certain currently available systems determine whether the SCR catalyst is at an ammonia storing (adsorption) or ammonia ejecting (desorption) temperature. When the SCR catalyst is storing ammonia, the system injects urea until the catalyst is full. When the SCR catalyst is ejecting ammonia, the system halts injection and allows stored ammonia to release and reduce NOx. Presently available systems tracking the SCR catalyst temperature in this manner suffer from a few drawbacks. For example, the amount of ammonia stored on the SCR catalyst varies with temperature. However, presently available systems assume a storage amount below a specified temperature, and zero storage above the specified temperature. Therefore, the controls may toggle significantly around the specified temperature, significantly overestimate ammonia storage capacity just below the specified temperature, and significantly underestimate ammonia storage capacity just above the specified temperature.

SCR catalyst ammonia surface coverage estimation and control


An ion source is provided. The ion source may include an ion source chamber, and a cathode disposed in the ion source chamber and configured to emit electrons to generate a plasma within the ion source chamber, the cathode comprising a refractory metal, wherein the refractory metal comprises a macrocrystalline structure.

Ion sources are widely deployed in various processing apparatus and systems, including ion assisted deposition system, ion deposition systems, as well as beamline ion implanters, to name a few examples. Many types of ion sources employ refractory materials, such as a refractory metals, for various components of the ion source. These components include filaments, cathodes, emitters, repellers, adjunct electrodes, among other materials. In indirectly heated cathode sources (IHC sources), refractory components include a cathode, a filament, used to heat the cathode, a repeller, disposed opposite the cathode, as well as optional bias electrodes. These materials may be subject to erosion during use, including during generation of plasmas containing reactive gases. In addition, the efficiency of components such as filaments and cathodes may tend to change during the lifetime of such components. Thus, the stability of output and efficiency of ion sources may be less than ideal.
It is with respect to these and other considerations that the present disclosure is provided.

High output ion source, ion implanter, and method of operation


Debugging tools are provided for program objects in dynamically typed programming languages. Some dynamic objects have both static type members and dynamic type members. Some dynamic objects implement an IDynamicObject interface, and some include a COM object. A list of dynamic object members is obtained from a dynamic language runtime. Member values are then obtained, and displayed in the debugger. Properties can be added to a dynamic object in the debugger. Code can be generated during debugging to make a user call to a method of the dynamic object, to evaluate a property of the dynamic object, and/or to forward a behavior of an operator to the dynamic type of the dynamic object. In some embodiments a dynamic language runtime operates with the debugger.

Data types in computer programming languages help give meaning to the bits that represent values in computer systems. Limiting program values to particular data types also helps programmers detect and avoid some errors. Some programming environments support static typing, in which a compiler or similar tool checks variable uses against variable type declarations at compile-time, that is, at the time when a program's source code is being translated into executable code. Some of the many programming languages which use static typing include Ada, Basic, C#, COBOL, FORTRAN, Java™ (mark of Sun Microsystems, Inc.), and Pascal, to name just a few. Some programming environments support dynamic typing, in which type-checking is performed at runtime (during program execution) rather than compile-time. Some of the programming languages which use dynamic typing include JavaScript™ (mark of Sun Microsystems, Inc.), Lisp, Prolog, Python, and Ruby, for example.


An oily inkjet ink comprises a pigment, a dispersant, and a water-insoluble organic solvent, wherein an ester solvent contained in the water-insoluble organic solvent is an ester solvent that is represented by the general formula: CnHx—COO—CmH2m+1, in which n represents an integral number falling within the range of 8 to 15, m represents an integral number falling within the range of 4 to 7, and x represents a number falling within the range of 2n−1 to 2n+1. The ester solvent is contained in a containing quantity falling within the range of 10% by mass to 30% by mass with respect to the total quantity of the ink.

1. Field of the Invention
This invention relates to an oily inkjet ink. This invention particularly relates to an oily inkjet ink, which has a good aptitude for inkjet and a good aptitude for toners, and which is free from the risk that an uncomfortable alcoholic odor will be given out from printed paper after image formation (after printing).
2. Description of the Related Art
Inkjet recording systems are the systems in which an inkjet ink having a high degree of fluidity is jetted out in the form of ink droplets from fine head nozzles, and in which an image is recorded by the ink droplets on printing paper located so as to stand facing the nozzles. Recently, the inkjet recording systems have rapidly become popular for the possibility of high speed printing with low noise. As the inks for use in the inkjet recording systems, there have been proposed various oily inkjet inks, which contain a water-insoluble solvent and a pigment finely dispersed in the water-insoluble solvent.
For example, in U.S. Pat. No. 7,799,123, the inventors proposed an ink, which contains a non-polar solvent, such as an ester solvent, a higher alcohol solvent, or a hydrocarbon solvent, and a pigment dispersed in the non-polar solvent. The proposed ink has the advantages in that the ink has excellent on-printer stability and a good aptitude for inkjet, and in that the ink yields a printed surface, which does not adhere to a print surface having been printed with a plain paper copier or a laser printer when being superimposed upon the print surface. The proposed ink thus has a good aptitude for toners.
With regard to the inkjet printing, the problems of odors are often encountered. Examples of the odors include an odor due to a residual monomer in a UV ink (as described in U.S. Patent Application Publication No. 20030063172) and an odor due to a solvent contained in a non-aqueous ink in which a printing medium is vinyl chloride (as described in Japanese Unexamined Patent Publication No. 2008-274034). However, with respect to oily inks used ordinarily, before now, problems of odors have not been reported.
However, recently, as for the inkjet printing using an ordinary oily ink which does not contain a specific substance that will be the cause of the odor as described above, the problems have occurred in that an uncomfortable odor is given out from the printed paper after image formation. The inventors have eagerly conducted research and have found that, of calcium compounds, such as calcium carbonate, calcium hydroxide, and calcium oxide, which are contained in paper, calcium hydroxide, which is susceptible to extraction by water and which has a high pH value, causes the problems of the odor to occur. Specifically, the inventors have found that calcium hydroxide contained in the printing paper has the effect of a catalyst upon ester solvents widely used in ordinary inks, e.g. isononyl isononanoate and isooctyl palmitate, hydrolyzes the ester solvents to generate alcohols having the uncomfortable odor, and thus causes the problems of the odor to occur. The present invention is based upon the findings described above.


Apparatus for advancing singularized stacks of paper sheets to a packing machine has an intermittently driven first conveyor which receives groups of abutting stacks at required or fixed intervals and overlaps in part with a continuously or intermittently driven gathering conveyor wherein successive groups are caused to form a continuous row. Successive foremost stacks of the row are taken over by a singularizing conveyor which moves the stacks apart and delivers them cyclically to the packing machine. The gathering conveyor has several sections which are disposed one behind the other in the direction of transport of stacks toward the singularizing conveyor and which can be lifted, individually or jointly, into engagement with stacks above them or lowered below the level of the first conveyor so that the latter can advance the stacks in a direction toward the singularizing conveyor. Detectors are provided to operate cylinder and piston units which raise or lower the sections of the gathering conveyor so that a section is lowered if it is not disposed below a stack or below a set of several stacks. The sections are lifted when the first conveyor is arrested upon completed advancement of a group into the range of the gathering conveyor.

The invention relates to improvements in apparatus for transporting stacks of sheets or like commodities to a processing machine, particularly for transporting stacks of paper sheets to a packing machine. Still more particularly, the invention relates to improvements in apparatus of the type disclosed in commonly owned U.S. Pats. Nos. 4,518,075 to Aykut et al. and 4,629,058 to Reissmann et al.
The patents to Aykut et al. and Reissmann et al. disclose apparatus wherein a first conveyor receives groups of abutting stacks of paper sheets from a stack accumulating and group assembling station, a gathering or condensing conveyor which converts successive groups into a continuous row, and a singularizing conveyor which advances successive foremost stacks of the row toward the processing machine in such a way that the stacks are spaced apart from each other and can enter the processing machine at required intervals, i.e., so that the machine receives a stack during the optimum stage of the respective cycle. The patents further disclose that the gathering conveyor can comprise a plurality of individual conveyors which are operated in such a way that they reduce the gaps between successive groups of stacks in order to form the aforementioned row of abutting stacks which are thereupon singularized prior to entering the processing machine. The speed of the singularizing conveyor exceeds the speed of conveyors which together form the gathering conveyor.

Apparatus for transporting stacks of paper sheets to processing machines