The present invention is directed to novel 2,5-dichlorophenylthioglycolic acid derivative, a process for their production and a process for producing the desired product 2,5-dichlorophenylthioglycolic acid derived from said novel compounds. 2,5-dichlorophenylthioglycolic acid derivative of the present invention can be obtained by reacting 2,4,5-trichlorobenzensulfonates and thioglycolic acid in the presence of base, and said desired product can be obtained by desulfonating said compound in an aqueous solution of mineral acid. Novel 4-carboxymethylthio-2,5-dichlorobenzenesulfonates of the present invention can be used advantageously as an intermediate for the production of 2,5-dichlorophenylthioglycolic acid. The use of said intermediate makes it possible to obtain the desired product in a decreased process steps with high yield. In addition, it poses no problem of environmental pollution as pointed out with conventional methods because it uses no heavy metals.

There are some conventional methods for producing 2,5-dichlorophenylthioglycolic acid, including the following:
(a) the method in which 1,4-dichlorobenzene is sulfochlorinated with chlorosulfonic acid and then reduced to 2,5-dichlorothiophenol with zinc powder under acidic conditions, followed by reaction with monochloroacetic acid to yield 2,5-dichlorophenylthioglycolic acid (U.S. Pat. No. 3440288), PA1 (b) the method in which 2,5-dichloroaniline is diazotized and then reacted with thiourea in the presence of copper sulfate and subsequently hydrolyzed to 2,5-dichlorothiophenol, followed by reaction with monochloroacetic acid to yield 2,5-dichlorophenylthioglycolic acid (Ger. Offen. DE3715508), PA1 (c) the method in which 1,2,4-trichlorobenzene and sodium hydrosulfide are reacted in the presence of copper acetate catalyst in liquid ammonia solvent under increased pressure to yield 2,5-dichlorothiophenol, followed by reaction with monochloroacetic acid to yield 2,5-dichlorophenylthioglycolic acid [Kogyo Kagaku, 70, 1384 (1967)]. PA1 (1) novel 4-carboxymethylthio-2,5-dichlorobenzenesulfonates, PA1 (2) a method for producing novel 4-carboxymethylthio-2,5dichlorobenzenesulfonates characterized by reacting 2,4,5trichlorobenzenesulfonates and thioglycolic acid in the presence of a base, PA1 (3) a method for producing 2,5-dichlorophenylthioglycolic acid characterized by desulfonating 4-carboxymethylthio-2,5dichlorobenzenesulfonates using an aqueous solution of mineral acid, and PA1 (4) a method for producing 2,5-dichlorophenylthioglycolic acid characterized by reacting 2,4,5-trichlorobenzenesulfonates and thioglycolic acid in the presence of a base and subsequently reacting the reaction mixture with mineral acid or an aqueous solution of mineral acid. PA1 (1) the use of 2,4,5-trichlorobenzenesulfonates as a starting material offers improvement in the reactivity of the 4-position chlorine atom due to the strong electron attracting property of the sulfone group and thus makes reaction with thioglycolic acid in the presence of base easy and permits direct introduction of thioglycol group (Process A), and ##STR1## (wherein M represents hydrogen, sodium or potassium) (2) the novel 4-carboxymethylthio-2,5-dichlorobenzenesulfonates thus obtained, which are 2,5-dichlorophenylthioglycolic acid derivatives, can easily be desulfonated to the desired 2,5-dichlorophenylthioglycolic acid by reacting with an aqueous solution of mineral acid due to the action of thioglycol group, which is an electron donor (Process B). The reaction proceeds with high yield in both processes.
However, these known methods respectively have the following drawbacks.
In the method of (a) above, a large amount of waste effluent which contains harmful heavy metals poses a major problem of environmental pollution. In the method of (b) above, the copper compound used is difficult to dispose of as in (a) and the production efficiency is low; it is not an economic method of production. In the method of (c) above, liquid ammonia is difficult to handle and the copper compound used is difficult to dispose of, and additionally special equipment is required because the reaction is carried out under high pressure. Also, there is a problem of very low yield.
As stated above, all these known methods have various drawbacks and are not industrially advantageous,
For this reason, attempts have been made to develop an industrially advantageous method for producing 2,5-dichlorophenylthioglycolic acid, but there is no satisfactory method.

2,5-dichlorophenylthioglycolic acid derivative and method for its production


The present disclosure relates to a field of displaying technology, and describes an in-cell touch screen and a method for driving the same. The in-cell touch screen comprises: a substrate; an electrode layer, formed on the substrate; and a touch driving module, wherein multiple rows of electrodes are formed on the electrode layer, and each row of electrodes is configured to drive at least one row of pixel units; the touch driving module comprises a plurality of signal lines corresponding to electrodes in one-to-one correspondence; and during a time period for displaying an image, when the image is to be displayed by the pixel units corresponding to a row of electrodes, the touch driving module is configured to input display driving signals to the row of electrodes and input touch driving signals to the other rows of electrodes simultaneously.

Currently, the in-cell touch screen is a trend in the field of touch screen display for its advantages of being of a slim size, light weight and high integration. In most of conventional in-cell products, a touch driving electrode and a common electrode always share one electrode in the touch screen. Furthermore, most of conventional in-cell products are driven in a time division driving manner, so as to prevent a display function and a touch function of the shared electrode from interfering each other. In other words, a time period for displaying one frame is divided into two parts. At one part of the time period, a electrode layer operates in the touch function by inputting a touch driving signal into the electrode layer, while the electrode layer may not operate in the display function at this point; in contrast, at the other part of the time period, the electrode layer operates in the display function by inputting a display driving signal into the electrode layer, while the electrode layer may not operate in the touch function at this point.
In the above method, although the interference between the display function and the touch function can be prevented, both the time period for the electrode operating in the touch function and the time period for the electrode operating in the display function in the time period for displaying each frame are significantly reduced. As a result, a frequency for scanning the touch signal in the electrode cannot be raised, and thus both the touch function and the display function of the touch screen deteriorate, leading to adversely affect the design of the display and the display quality, especially the high definition of the display may be difficult to be implemented, meanwhile the touch function cannot be improved either.

In-cell touch screen and method for driving the same

CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO.


Known methods of detecting routing loops in telecommunication networks are cumbersome and time-consuming. In addition, the probability that an existing routing loop is even actually detected is too low. In a method of detecting a routing loop according to the invention, paths whose lengths are stored are assembled. As soon as the length of a (partly assembled) path exceeds a predetermined value which is greater than, or equal to, the largest existing path length in the telecommunication network, this indicates the existence of a routing loop.

The invention relates to a method of detecting a routing loop in a telecommunication network equipped with nodes, each containing node-specific routing information, in which a path is assembled from a source node, on the one hand, to a destination node, on the other hand, on the basis of the node-specific routing information associated with the source node and the node-specific routing information associated with the nodes situated on the path.
Such a method is disclosed by U.S. Pat. No. 5,014,262. In the latter, two submethods are described: a first submethod for detecting a routing loop (call looping) and a second submethod for detecting inefficient routing (circuitous routing). The first submethod, which is carried out for each destination node, comprises four steps. In the first step, all the nodes which do not receive any traffic for the destination node are removed, and in the second step, all the nodes which do not transmit any traffic to the destination node are removed. These nodes which have to be removed can, after all, not form part of a routing loop. In the third step, all tee nodes which form part of so-called miniloops are dealt with. Two nodes form part of a miniloop if one of the nodes receives traffic for the destination node from the other node and the first node also transmits traffic to the other node. For technical reasons, a miniloop can never occur as a routing loop because, at the position of a node, which preceding node the traffic to be routed further originates from is known and said traffic will never, of course, need to be sent back to said previous node. In the fourth step, the nodes which do not form part of a routing loop are identified. Such a node must, for example, meet the criterion that, if the node transmits traffic to another node, said other node must not send any traffic back to the node concerned. How this criterion, which in fact only states in other words that no routing loop must be possible, must be met is unclear. One solution could be to investigate for all the nodes left over after the first three steps whether the node which has the most incoming and outgoing traffic and transmits traffic to particular nodes receives traffic back from said particular nodes via a longer path. The said node would then have to be removed and the remaining nodes would have to be investigated again, etc. Like the criterion stated, such investigations are, however, yet another formulation of the problem of detecting routing loops. This known method, which is in any case cumbersome and, consequently, time-consuming, furthermore has the disadvantage that it is uncertain whether existing routing loops are found with it.

Method of detecting a routing loop in a telecommunication network, telecommunication network for using the method, and detection means for use in the telecommunication network


A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled in an anti-ferromagnetic manner through the non-magnetic intermediate layer. Each ferromagnetic layer consists of a plurality of layers. In each ferromagnetic layer, a layer which is in contact with the non-magnetic intermediate layer is formed of Co or an alloy including Co while at least one layer is formed of Ni or an alloy including Ni, and its film thickness is determined to be at least 60% or more of a film thickness of each ferromagnetic layer.

The present invention relates to a laminated ferrimagnetic thin film having a magnetization reversion characteristic suitable for a free magnetic layer of a magneto-resistive effect element or a ferromagnetic tunnel junction element, and a magneto-resistive effect element and a ferromagnetic tunnel element using this thin film.
The magneto-resistive effect is a phenomenon that an electric resistance varies based on an external magnetic field. A magneto-resistive effect element senses a magnitude of the external magnetic field applied to the element as a change in an element resistance value, or has a function to hold this state as a magnitude of the element resistance value. In particular, there are many expectations to application of a spin valve type GMR element and a ferromagnetic tunnel junction element each having a large magneto-resistive change ratio (MR ratio) in a low external magnetic field area at a room temperature to a high recording density compatible reproduction magnetic head and a high density solid-state magnetic memory (MRAM).
These magneto-resistive effect elements consist of a free magnetic layer capable of setting a magnetization direction free with respect to the external magnetic field, a pinned magnetic layer including a mechanism to fix a magnetization direction to the external magnetic field, and a non-magnetic layer which is arranged between and comes into contact with these layers.
The magneto-resistive effect occurs when a resistance of the element varies due to a relative magnetization angle of the magnetic layers on the both sides with the non-magnetic layer sandwiched therebetween. Substantially eliminating the magnetic coupling between the free magnetic layer and the pinned magnetic layer realizes a so-called spin valve type element operation that only a magnetization direction of the free magnetic layer varies with respect to the external magnetic field, and obtains the magneto-resistive effect sensitive to the external magnetic field.
As magnetic materials (ferromagnetic substances), there are widely known Co, Ni, Fe and alloys of these materials. In particular, Co or an alloy including Co, especially a CoFe alloy has a feature of large saturation magnetization, and Ni or an alloy including Ni, especially an NiFe alloy has a feature of a excellent soft magnetic characteristic (low coercive force). As free magnetic layer materials of the magneto-resistive effect element, a magnetically soft (superior in a soft magnetic characteristic) magnetic material like NiFe is suitable and widely used because of the need to quickly perform magnetization reversion in a small external magnetic field.
Further, as to a mechanism which fixes a magnetization direction of the pinned magnetic layer to an external magnetic field, there are employed a method (coercive force difference type) which uses a magnetic material which is magnetically hard as a material and makes its reverting coercive force larger than that of the free magnetic layer, and a method (exchange biased type) which further positively fixes the magnetization direction to one direction by bringing an anti-ferromagnetic layer into contact with a pinned magnetic layer.
The element which uses a non-magnetic conductor such as Cu, Ag and Au as a non-magnetic layer is a spin valve type GMR element typically disclosed in U.S. Pat. No. 5,159,513, and an element which uses a non-magnetic insulator such as an Al oxide or an Al nitride as a non-magnetic layer is a ferromagnetic tunnel junction element typically disclosed in U.S. Pat. No. 5,650,958. A higher MR ratio can be obtained in the latter element rather than the former element. Furthermore, the both elements has a difference in direction along which an electric current is passed. Since the in-plane high integration of the element is important for an application to a high density solid-state magnetic memory (MRAM), the ferromagnetic tunnel junction element which has a higher MR ratio and performs energization in a direction vertical to the plane is more preferable.
On the other hand, as one of thin film structures which can be applied to the ferromagnetic layer (the free magnetic layer or the pinned magnetic layer) in these magneto-resistive effect elements, there is a multi-layer magnetic film which is called a laminated ferrimagnetic thin film. As apparent from the basic structure disclosed in U.S. Pat. No. 5,341,118, this is a multi-layer thin film consisting of at least two ferromagnetic layers and a non-magnetic intermediate layer which is arranged between and in contact with the ferromagnetic layers. When a non-magnetic transition metal which is preferable as a non-magnetic intermediate layer material is used, the extremely strong anti-ferromagnetic interaction (exchange bonding) acts on the both ferromagnetic layers through the non-magnetic intermediate layer, and their magnetization directions are always anti-parallel in a low magnetic field. Therefore, the magnetic moments of the respective ferromagnetic layers constituting the laminated ferrimagnetic thin film are always canceled out, and it is possible to realize an artificial ferrimagnetic state having a small magnetic moment corresponding to a difference in film thickness between the respective ferromagnetic layers. In the laminated ferrimagnetic thin film, the magnetic film thickness can be effectively greatly reduced without extremely decreasing the film thickness of each ferromagnetic layer.
The magnitude of the anti-ferromagnetic exchange bonding between the ferromagnetic layers in the laminated ferrimagnetic thin film depends on a material and a film thickness of the non-magnetic intermediate layer. Physical Review Letters, Vol. 67, p. 3598 (1991) describes that the intensity of the anti-ferromagnetic exchange bonding between the ferromagnetic layers in the laminated ferrimagnetic thin film depends on a non-magnetic intermediate layer material and the periodic vibrations are demonstrated with respect to a film thickness of the non-magnetic intermediate layer material. It also mentions that, in the laminated ferrimagnetic thin film which has a simple sandwich structure that the number of times of repetition=1 and in which film thicknesses of the respective ferromagnetic layers are equal to each other, assuming that HS is a saturation magnetic field, MS is saturation magnetization of the ferromagnetic layer to be used and t is a film thickness of the ferromagnetic layer, the bonding intensity (J: anti-ferromagnetic exchange bonding energy) can be obtained based on J=HS×MS×t/2. In this report, there is described the relationship between the anti-ferromagnetic exchange bonding intensity and many non-magnetic intermediate layer materials when Co is used as the ferromagnetic layer, as well as the tendency that the magnitude of the ferromagnetic exchange bonding energy increases in the order of a 5d group transition metal, a 4d group transition metal and a 3d group transition metal as the non-magnetic intermediate layer material and that it also increases as a quantity of outermost shell d electrons becomes larger in the same cycle. Among others, Ru, Rh, Ir and Cu have the anti-ferromagnetic exchange bonding energy of up to 10−3 J/m2 (1 erg/cm2), which is considerably larger than that of any other element. It is to be noted that, according to Journal of Magnetism and Magnetic Materials, Vol. 165, p. 524 (1997), assuming that t1 and t2 are the respective ferromagnetic layer film thicknesses, the anti-ferromagnetic exchange bonding energy when the respective ferromagnetic layers have different film thicknesses can be given by J=HS×MS×t1×t2/(t1+t2).
It is known that the exchange bonding intensity of the laminated ferrimagnetic layer also depends on a material for the ferromagnetic layer to be used. Physical Review B, Vol. 56, p. 7819 (1997) mentions that the anti-ferromagnetic exchange bonding energy when Cu is used as the non-magnetic intermediate layer and NiFe is used as the ferromagnetic layer is not more than J=6×10−5 J/m2 (0.06 erg/cm2), but this value is far smaller than that obtained when Co is used as the ferromagnetic layer. Further, Journal of Applied Physics, Vol. 73, p. 5986 (1993) mentions that the exchange bonding intensity becomes smaller when NiFe (perm alloy) is used as the ferromagnetic layer rather than Co, and points out the possibility of the influence of the fact that the saturation magnetization of NiFe is smaller than that of Co. Japanese patent application laid-open No. 143223/2001 discloses a film thickness range of the non-magnetic intermediate layers (Ru, Cr, Ir and Rh) by which the magnitude of a saturation magnetic field to be obtained is preferable when NiFe and Co are used as the ferromagnetic layer material in the laminated ferrimagnetic thin film. By using the relationship between the saturation magnetic field disclosed herein and the non-magnetic intermediate layer film thickness, the relationship between the saturation magnetization of each ferromagnetic layer material and its film thickness, and a relational expression of the anti-ferromagnetic exchange bonding energy J and the saturation magnetic field HS mentioned above (J=HS×MS×t1×t2/(t1+t2)), the non-magnetic intermediate layer film thickness dependence of each anti-ferromagnetic exchange bonding intensity when the ferromagnetic layer materials are NiFe and Co can be obtained.
FIGS. 1 and 2 are graphs showing the relationship between the anti-ferromagnetic exchange bonding energy of NiFe and Co obtained by the above method and film thicknesses of the non-magnetic intermediate layers (Ru, Rh, Ir).
Description will now be given as to a prior art concerning the application of the laminated ferrimagnetic thin film to the magneto-resistive effect element. The magneto-resistive effect element having a laminated ferri type pinned magnetic layer will be first explained. In the magneto-resistive effect element, as described above, in order to subject the free magnetic layer to magnetization reversion in accordance with a change in an external magnetic field (in order to cause the magneto-resistive effect element to operate in the spin valve manner), the magnetic effect acting between the free magnetic layer and the pinned magnetic layer must be reduced to substantially zero. When the laminated ferrimagnetic thin film is applied to the pinned magnetic layer, however, the influence of the pinned magnetic layer on magnetization reversion of the free magnetic layer can be further reduced. The basic structure of the magneto-resistive effect element having the laminated ferri type pinned magnetic layer is disclosed in U.S. Pat. No. 5,465,185. Usually, in the magneto-resistive effect element, the phenomenon that a fixed amount of the reverting magnetic field of the free magnetic layer is shifted can be observed due to the influence of the static magnetic field formed by the magnetic charge of an end of the pinned magnetic layer. In the magneto-resistive effect element having the laminated ferri type pinned magnetic layer, however, the static magnetic field formed by the pinned magnetic layer can be minimized by the magnetic thin film reducing effect of the pinned magnetic layer, thereby reducing the shift of the reverting magnetic field of the free magnetic layer. In the magneto-resistive effect element having the laminated ferri type pinned magnetic layer, an improvement to make the pinned magnetic layer more preferable (the magnetic effect of the pinned magnetic layer acting on the free magnetic layer is further reduced) has been advanced. For example, Japanese patent application laid-open No. 052317/2001 discloses a method by which grain growth is suppressed due to the buffer effect by realizing the three-layer structure with an appropriate material and film thickness of a ferromagnetic layer on a free magnetic layer side of two ferromagnetic layers constituting a laminated ferri type pinned magnetic layer, thereby smoothing the top face of the pinned magnetic layer on the free magnetic layer side. As a result, the direct ferromagnetic coupling (which is generally called nail coupling) due to roughness acting between the pinned magnetic layer and the free magnetic layer can be reduced. In such a laminated ferri type pinned magnetic layer, it is know that there is also an advantage to make the pinned magnetic layer magnetically more hard as well as the above-described advantages. That is, in the magneto-resistive effect element having the laminated ferri type pinned magnetic layer, since the pinned magnetic layer is hard to be reverted with respect to the external magnetic field, it is further preferable as the pinned magnetic layer whose magnetization direction must be fixed. Journal of Applied Physics, Vol. 85, p. 5276 reports the coercive force difference type ferromagnetic tunnel junction.
The magneto-resistive effect element having the laminated ferrimagnetic layer will now be described. Its basic structure is disclosed in U.S. Pat. No. 5,408,377. The advantage of using the laminated ferrimagnetic thin film for the free magnetic layer lies in that reducing an effective magnetic film thickness of the free magnetic layer can decrease the magnitude of a demagnetizing field formed by the free magnetic layer itself which is in proportion to the magnetic film thickness. The reverting magnetic field of the micro-fabricated free magnetic layer is increased in inverse proportion to an element size due to the effect of the demagnetizing field, but the magneto-resistive effect element using the laminated ferri type free magnetic layer can reduce the reverting magnetic field. As a result, in a magnetic head, the magnetic field sensitivity of a fine element can be improved. Also, in a solid-state magnetic memory, the switching magnetic field of the fine element can be reduced, thereby enabling power saving.
Thus, realizing minuteness of an element size is required with respect to a demand for the high recording density of a reproduction magnetic head and a demand for the high integration of a solid-state magnetic memory, and it is expected that suppression of an increase in the reverting magnetic field of the free magnetic layer caused due to the above-described realization of minuteness becomes very important in future. As different from the pinned magnetic layer, however, there is almost no improvement report about the magneto-resistive effect element in which the laminated ferrimagnetic thin film is applied with respect to the free magnetic layer.
However, in the prior art laminated ferrimagnetic thin film, the large anti-ferromagnetic exchange bonding energy can be readily obtained when Co or CoFe is used as a ferromagnetic layer material, but it is difficult to produce the large anti-ferromagnetic exchange bonding energy by using Ni or NiFe. Referring to FIG. 2, when Co is used as a ferromagnetic layer material, the large anti-ferromagnetic exchange bonding energy can be obtained in a large non-magnetic intermediate layer thin film range of approximately 0.6 nm if the non-magnetic intermediate layer is formed of Ru, Ir or Rh. However, referring to FIG. 1, the non-magnetic intermediate layer film thickness range in which the large anti-ferromagnetic exchange bonding energy of not less than, e.g., 10−3 J/m2 (1 erg/cm2) when NiFe is used does not exist if the non-magnetic intermediate layer is formed of Ru or Ir. Further, in case of Rh, this range is not more than 0.1 nm, which is very narrow. Namely, when Ni or NiFe is used as a ferromagnetic layer material, very precise control over the non-magnetic intermediate layer film thickness is required as compared with the case that Co or CoFe is used. When applying to a device, irregularities in film thickness between lots or in a wafer must be taken into consideration, which results in a serious problem. As the laminated ferrimagnetic thin film suitable for the free magnetic layer in the magneto-resistive effect element, there is required the laminated ferrimagnetic thin film which can simultaneously realize the large anti-ferromagnetic exchange bonding energy and the excellent soft magnetic characteristic equivalent to that of Ni or NiFe and does not require precise control of the non-magnetic intermediate layer film thickness.

Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film


A baluster driver tool for rotating a baluster to threadably secure it to a support. The driver tool includes a housing having a connector at one end for connecting it to a drill and a baluster-engaging member at the opposite end for receiving the baluster. The baluster-engaging member includes a cavity that is complementary sized and shaped to receive an end of the baluster. When the drill is activated, the housing rotates about its longitudinal axis causing the baluster to rotate in unison with the housing and securing a threaded end of the baluster into the support. In a second embodiment, a smooth tapered end of a baluster is received within a threaded tapered cavity in the housing. The threads secure the smooth tapered end of the baluster within the cavity so that rotation of the housing causes the baluster to rotate in unison therewith and securing the threaded end of the baluster to the support.

1. Technical Field
This invention generally relates to woodworking tools. More particularly, the invention relates to a tool for installing balusters and to a method of using the tool. Specifically, the invention relates to a baluster driver tool which is attachable to a rotary tool and causes a threaded end of the baluster to be rotated into a sill plate or stair tread, and to a method of using the driver tool.
2. Background Information
Railings are typically constructed as safety features along staircases and on upper floor landings or balconies. The railings generally have a hand rail and shoe rail which lie parallel to each other and are connected together by a series of spaced apart, vertical balusters. A newel post is provided at one end of the railing. The shoe rail may be replaced with another lower support such as a sill plate or stair tread.
The prior art has disclosed a number of ways of connecting balusters to a lower support such as a shoe rail. For example, U.S. Pat. No. 4,403,767, issued to Basey, discloses a series of socket members provided at intervals along a channel in the hand and shoe rail. The socket members receive complementary shaped plugs mounted onto the ends of the balusters. When a baluster is to be connected to the rail, the plug is inserted into a socket and the baluster is pushed downwardly until the flanges on the plug interlock with the shoulders in the socket. The remaining balusters are similarly snap-fitted into the shoe rail. The hand rail is then brought into contact with the free ends of the balusters in such a manner that the plugs engage the corresponding sockets. The hand rail is pushed downwardly so that the plugs snap into connection with the sockets. A problem associated with this type of construction is that the plugs and sockets are made from polyvinyl chloride. The components must therefore be purchased and installed on the hand rail, shoe rail and on both ends of each baluster. This adds to both the time and cost of building the railing.
U.S. Pat. No. 5,557,893, issued to Bowls, shows another manner of attaching balusters to hand and shoe rails. The rails are provided with a narrow channel and a connector member is mounted on each end of the balusters. The connector member includes a thin plate that is shaped to be received into the narrow channel of one of the rails. When the carpenter is building the railing, the thin plates are slid into the channels of the hand and shoe rails and is then fastened into place. This type of connector and method of installation is time consuming and adds to the cost of building the railing.
U.S. Pat. No. 4,352,485, issued to Basey, shows a baluster connected to the hand and shoe rails by means of an externally threaded dowel provided at the upper and lower ends of the baluster. The dowels are received in holes in the baluster and the hand and shoe rails. An adhesive may be applied to the dowel and/or hole to secure the dowel within the hole. The threads increase the surface area for adhesive to bond the baluster to the rail. The dowel is inserted into the baluster and the baluster is then pushed downwardly into contact with the rail.
Basey discloses in U.S. Pat. No. 4,533,121, that the dowels for connecting the balusters to the hand or shoe rails may be made of a material which allows the dowel to be permanently deformed once bent. This allows the carpenter to move the baluster into the required position without the dowel exerting undue force on the rest of the components. Again the dowel is inserted into the baluster and the baluster is pushed downwardly into contact with the rail.
U.S. Pat. No. 4,505,456, to Zieg, discloses the use of a corresponding socket and pivot system to connect a baluster to a hand or shoe rail. A plurality of sockets are formed along the underside of the hand rail or in the upper surface of the shoe rail. The baluster has an arcuate pivot member formed on at least one end and the pivot is sized to be received within the socket of the rail.
Another method of connecting a baluster to a hand or shoe rail is providing a two-sided lag bolt which is threaded at both ends but in opposite directions. One end of the lag bolt is connected to the baluster and the other end is inserted into a pilot hole in the lower support member. The baluster is then rotated about its longitudinal axis to drive the second end of the lag bolt into the support member. The baluster is rotated until the lower surface of the baluster abuts the upper surface of the support member. Alternatively, the end of the baluster may be externally threaded and be adapted to engage a complementary-shaped threaded hole in the lower support. The baluster is again rotated by hand so that the threaded end screws into the threaded hole. A railing is constructed by first connecting a number of balusters to the lower support member, and then connecting the free ends of the balusters to a hand rail by a suitable mechanism. This type of installation is relatively cost effective. The problem with this type of installation is that hand rotation of the balusters is time consuming and physically tiring when a large railing is being constructed. It is to this type of baluster/rail connection method that the present invention is directed.
There is a need in the art to provide a quick and easy method and apparatus for installing balusters that are rotated into connection with their lower support member.

Baluster driver tool and method of using same


Disclosed are a method and apparatus for processing a continuous audio stream containing human speech in order to locate a particular speech-based transaction in the audio stream, applying both known speaker recognition and speech recognition techniques. Only the utterances of a particular predetermined speaker are transcribed thus providing an index and a summary of the underlying dialogue(s). In a first scenario, an incoming audio stream, e.g. a speech call from outside, is scanned in order to detect audio segments of the predetermined speaker. These audio segments are then indexed and only the indexed segments are transcribed into spoken or written language. In a second scenario, two or more speakers located in one room are using a multi-user speech recognition system (SRS). For each user there exists a different speaker model and optionally a different dictionary or vocabulary of words already known or trained by the speech or voice recognition system.

The invention generally relates to the field of digital audio processing and more specifically to a method and apparatus for processing a continuous audio stream containing human speech related to at least one particular transaction. The invention further relates to a multi-user speech recognition or voice control system.
Business transactions are increasingly conducted by way of telephone conversation. Exemplarily it is referred to audio logs of call center dialogues which have to be accessed in order to locate specific transactions. Another example are logs which are stored on audio tapes and can be accessed by scanning corresponding tape archives.
Beyond that it is to be expected that in the future many transactions like teleshopping or telebanking will be handled by automatic transaction systems using text to speech synthesis to communicate with a customer. Another substantial and still growing amount of transactions is the field of telephone conversation which takes place between two human individuals, in particular two individuals speaking different languages.
A particular field of transactions is transactions that are legally binding. It is current practice to record the underlying interactions on audio tapes to have a log of each interaction. For legal reasons, in cases where both parties disagree about an intended transaction at a later date, these logs can be used as a proof instrument. Nowadays such tapes are labeled with a date information and a customer or employee identifier. This makes the task of locating and indexing an audio log of a specific transaction an extraordinary effort.
Prior efforts to automize the indexing of such audio material, e.g. using prior art speech recognition technology, failed due to the large variability of speech styles and dialects of the human individuals engaged in those interactions.
Another application field is multi-user speech recognition systems (SRSs) where two or more speakers are located in the same room, e.g. a typical mixed conversations during personal meetings or the like which shall be protocolled using SRS technology. Another similar situation is command language used in an aircraft cockpit where the pilot and the co-pilot operate the aircraft via voice control. As modem SRSs have to be trained for different users, these systems so far are not able to automatically switch between the different speakers.

Method and apparatus for the automatic separating and indexing of multi-speaker conversations

International Business Machines Corporation


A pointer intended for attachment to the digging arm of an excavator, is characterized by an elongated arm which can be pivoted on the digging arm using a drive whose driving movements are activated and controlled by the magnetic field generated by an underground cable, conduit or like conductor in a manner such as to cause the pointer to point towards the cable, conduit or like conductor independently of the position of the digging arm.

The present invention relates to a pointer for attachment to the digging arm of a mechanical excavator or digging machine, or to some other appropriate part of said machine.
Valuable assets are lost annually as a result of severing or destroying underground cables and underground conductors during ground excavating work carried out with the aid of excavating or digging machines. Hitherto, no effective method has been proposed which will enable the extension of underground cables, etc., to be detected and marked-out before commencing the excavation work. For instance, hitherto, the presence of an underground cable has been localized by detecting its magnetic field in accordance with standard methods and determining the position and the geometric extension of the cable on the basis thereof. The extension of the cable is then marked with the aid of pegs driven into the ground. In the case of cables which are not conducting or in the case of waterpipes or optical cables which are either surrounded by a metal screen or include an aluminium strip, the underground object has been detected with the aid of an active transmitter and receiver with the aid of overhead induction, whereafter the position of the cable or conduit is again marked with the aid of pegs driven into the ground.
One drawback is that the pegs become broken or are inadvertantly moved, or quite simply removed, causing uncertainty as to the actual position of the cable. The cable is often severed or dug up even when the pegs remain in position.
The object of the present invention is to provide a pointer which will constantly point to or indicate the location of an underground cable during an excavating operation, so that the machine operator can avoid cutting through or digging-up the cable or conduit.

Pointing device carried by digging arm of excavator, for dynamically indicating location and direction of extension of underground cable


An antenna element has a slit including a first portion and a second portion, the first portion extending in a first direction so as to separate first and second feed points from each other, and the second portion extending in a second direction different from the first direction. The slit is configured to resonate at an isolation frequency to produce isolation between the first and second feed points, and configured to form a current path around the slit. A current distribution along the current path generated by exciting through the first feed point is different from a current distribution along the current path generated by exciting through the second feed point, thus providing different radiation characteristics by the different current distributions.

The size and thickness of portable wireless communication apparatuses, such as mobile phones, have been rapidly reduced. In addition, the portable wireless communication apparatuses have been transformed from apparatuses to be used only as conventional telephones, to data terminals for transmitting and receiving electronic mails and for browsing web pages of WWW (World Wide Web), etc. Further, since the amount of information to be handled has increased from that of conventional audio and text information to that of pictures and videos, a further improvement in communication quality is required. In such circumstances, some steerable antenna apparatuses have been proposed.
Patent Literature 1 discloses an antenna device including a rectangular conductive substrate, and a planar antenna over a dielectric on the substrate. The antenna device is characterized in that a current flows in one diagonal direction on the substrate by exciting the antenna in a direction, and another current flows in the other diagonal direction on the substrate by exciting the antenna in a different direction. Thus, the antenna device of Patent Literature 1 can change its directional pattern and direction of polarization by changing the direction of a current flowing on the substrate.
Patent Literature 2 discloses a flip-type portable wireless apparatus with a open/close mechanism in which first and second housings are connected via a hinge, the portable wireless apparatus includes: a first planar conductor disposed on a first surface of the first housing along a longitudinal direction of the first housing; second and third planar conductors disposed on a second surface of the first housing opposing to the first surface, along the longitudinal direction of the first housing; and feeding means for feeding the first planar conductor and for selectively feeding the second or third planar conductor with a different phase than that used to feed the first planar conductor. The portable wireless apparatus of Patent Literature 2 can switch between the second and third planar conductors in response to a reduction in reception level, thus improving communication performance.
Patent Literature 3 discloses a portable radio unit including a dipole antenna; and two feeder means each connected to one of two antenna elements composing the dipole antenna.
Patent Literatures 4 and 5 disclose antenna apparatuses including first and second feed points respectively provided at positions on an antenna element, the antenna element being simultaneously excited through the first and second feed points so as to simultaneously operate as first and second antenna portions respectively associated with the first and second feed points, the antenna element further including electromagnetic coupling adjustment means provided between the first and second feed points for producing isolation between the first and second feed points. The antenna apparatuses of Patent Literatures 4 and 5 can simultaneously transmit and/or receive a plurality of radio signals with low correlation to each other, while having a simple configuration.

Antenna apparatus for simultaneously transmitting multiple radio signals with different radiation characteristics


A cellular communication system and method for determining cell relations between cells is disclosed. The cellular communication system transmits signals from one or more transmitters, for example, mobile stations or base stations, over a plurality of radio frequency channels that are assigned to the cells. The transmitted signals over the plurality of radio frequency channels are received at each one of the cells and their received signal strengths are measured at corresponding measurement times. The received signal strength measurements and corresponding measurement times are processed to determine whether a measured received signal strength at a corresponding measurement time is based on a transmission from a single transmitter in a cell. The measurements corresponding to signals found originated from single transmitters are used for determining the cell relations in terms of such parameters as path gain values or C/I ratios.

Generally, in a cellular radiocommunication system, a coverage area is divided into smaller sub-areas known as cells, where each cell is assigned a set of radio resources for serving subscribers. In a FDMA (Frequency Division Multiple Access) cellular system, the radio resources comprise multiplexed radio frequency channels. In a TDMA system (Time Division Multiple Access), the information is transmitted during assigned time slots of a set of radio frequency channels, with different users being assigned corresponding time slots on the same or different radio frequency channels. In both the FDMA and TDMA cellular systems, however, the assignment of the radio frequency channels between the cells produces two types of interference: co-channel interference and adjacent channel interference. Co-channel interference results if two separate signals are sent on the same frequency simultaneously, thereby limiting the ability of a receiver receiving both signals to separate them for detection of the desired signal. Adjacent channel interference results if channels that are adjacent to each other in the frequency spectrum are used in the same geographical area. Transmissions on a radio frequency channel tend to leak to adjacent frequencies and cause interference.
Conventionally, co-channel interference and adjacent channel interference in cellular systems are reduced by intelligently dividing the radio frequency resources among the cells. Most cellular systems use a predefined frequency re-use pattern that is optimized based on a particular characteristic of a coverage area. Under such frequency re-use pattern, adjacent cells are assigned different radio frequency channels, with the same radio frequency channel assignment being repeated for distant cells. Because some of the radio frequency channels are re-used in distant cells, co-channel interference can not be totally eliminated.
Improved frequency planning that relies on cell relations can further reduce co-channel. The cell relations among the cells is often expressed by statistically estimating measured cell relation parameters. Known methods for estimating cell relations have focused on measuring overall interference in a certain cell. Such measurements are usually done, while ordinary communication traffic is in progress. Under such circumstances, it is often difficult to identify the source of a signal for measurement purposes, since the radio frequency channel over which measurements are made may include contributions from several sources. It is thus difficult to accurately measure how much transmissions in one cell interferes with transmissions in another cell, if such transmissions occurs simultaneously on the same frequency. As a result, conventional methods do not provide an accurate representation of cell relations among the cells.
It is, therefore, desirable to accurately measure cell relations, preferably, in both the up-link direction and downlink direction, without interfering with ongoing traffic.

Method for acquisition of cell relations in a cellular radiocommunication system


A display system (AP1) has plural cameras (11L an d11R) having fields of view (31L and 31R) that extend more orthogonal to than parallel to a display screen (21) for viewing distal objects. Reflectors (33L and 33R) redirect touchscreen light (36) from a direction along the display screen to a direction toward the cameras. A video processor (19) locates a 2D position relative to the display screen of an object proximate to the display screen as a function of images generated by the cameras in response to the touchscreen light.

A "touchscreen" is a display that can detect the presence and location of a touch, e.g., by a finger, within the display area. Touchscreen capabilities can be enabled by a range of technologies including resistive, surface acoustic wave, capacitive, infrared, strain gage, diffused laser imaging, optical imaging, dispersive signal technology, and acoustic pulse recognition. A touchscreen allows user input without requiring a separate device such as a mouse or trackpad. Unlike those devices, a touchscreen enables a user to interact with what is displayed directly on the screen, where it is displayed, rather than indirectly.
Touchscreens are incorporated increasingly in small devices such as cell phones, PDAs, digital audio players, and navigation units. Large touchscreen displays are also increasingly common in kiosks and other commercial settings. However, displays for desktop computers usually do not provide touchscreen capabilities.
TouchSmart™ computers, available from Hewlett-Packard Company, are notable exceptions. The computers include and are visually dominated by a touchscreen display. Infrared emitters at the upper corners of the display radiate light that is normally reflected by opposing display bezels. Linear detector arrays detect the reflections and any shadows to locate a touch trigonometrically. The touchscreen capabilities add significantly to the cost of the computers.
These figures depict implementations/embodiments of the invention and not of the invention itself.

Hewlett-Packard Development Company, L.P.


A novel device and process is described for an ESD protection device for complimentary cascaded NMOS output circuit strings. The invention consists of a clamping NMOS with gate connected to the input or output pad through a diode and connected to ground through a resistor. The clamping device drain is connected to the signal gate of the active output NMOS and the clamping device source is connected to ground. An ESD event causes the diode to go into breakdown mode and the conduction current across the resistor places a positive voltage on the clamping device gate turning the clamping device on. This clamps the active NMOS signal gate to ground assuring that the output NMOS remains in an off condition during the ESD event. This prevents any damage due to high current flow through the active, or used output inverter string.

(1) Field of the Invention
The present invention relates generally to a structure of and manufacturing process for a semiconductor device which provides improved ESD protection of active semiconductor devices and more particularly to a signal gate ground clamping element for cascaded metal oxide semiconductor (MOS) circuit configuration.
(2) Description of Prior Art
Because of high input impedance and thin oxide gate structures, the problem of Electrostatic Discharge (ESD) damage with field effect transistor (FET) devices can be severe. Therefore the input/output (I/O) circuit locations or pads usually have a protective device connected between the I/O pad and the internal circuits which allows the ESD current to be shunted to ground Another important characteristic of the ESD protection device is that it must not interfere with the operation of the devices it is designed to protect, while at the same time providing good protection when abnormal or ESD voltage incidents occur.
Typical ESD protection devices consist of a N channel metal oxide semiconductor (NMOS) connected to I/O pad A parasitic NPN bipolar device is essentially in parallel with the NMOS device which has a collector base breakdown triggered by the ESD voltage. Once triggered by an ESD incident, the parasitic device operates in a secondary breakdown mode to clamp the ESD voltage to a suitable level and pass the high current to a second voltage source, typically ground.
Integrated logic circuits frequently have a complimentary MOS output string as typified in FIG. 1 utilizing xe2x80x9cusedxe2x80x9d or active devices PMOS PU1, first or cascaded NMOS NU1, second or switched NMOS NU2, and xe2x80x9cunusedxe2x80x9d or xe2x80x9cdummyxe2x80x9d I/O strings represented by devices PMOS PD1, first unused NMOS ND1, and second unused NMOS ND2. In addition to the complimentary PMOS PU1 and NMOS NU2 signal driven switching devices in the active I/O, the xe2x80x9cusedxe2x80x9d logic string shown in FIG. 1 also has a cascaded first NMOS NU1 in series with the switched second active or xe2x80x9cusedxe2x80x9d NMOS NU2. The gate of first NMOS NU1 has its gate tied to Vcc. This cascaded FET NU1 provides flexibility in circuit logic voltage levels while utilizing a specific FET device design.
In addition to the xe2x80x9cusedxe2x80x9d or active I/O string, a xe2x80x9cDummy I/Oxe2x80x9d or inactive device string is shown in FIG. 1. The string is comprised of a PMVOS PD1 with its gate and drain tied too Vcc, and its source tied to the output pad 1 and to the drain of the cascaded firs xe2x80x9cunused or dummy NMOS ND1. The source of the cascaded NMOS ND1 is tied to the lower second xe2x80x9cmusedxe2x80x9d NMOS ND2. The gate and source of NMOS ND2 are tied to ground.
Referring to the xe2x80x9cusedxe2x80x9d device string, a high logic level signal from the internal circuit, typically 3.3 V or 5V, will turn on the second NMOS NU2 in the xe2x80x9cusedxe2x80x9d or active string essentially pulling the output pad 1 voltage down to ground. The same logic signal assures that the PMOS PU1 is turned off preventing any current flow in the string except during the switching transition. Conversely, a low logic signal from die internal circuit will turn on PMOS PU1 and turn off the NMOS NU2 presenting a voltage at or near Vcc at the output pad.
If an ESD event occurs while the second xe2x80x9cusedxe2x80x9d NMOS NU2 is turned on, high current can flow through the device with the potential for device damage. In addition, even with the device in the off state, a phenomenon known as hot carrier gate tunneling may turn the device on during an ESD event The hot carrier gate tunneling is caused by a high voltage such as produced by an ESD event, being placed on the drain of the NMOS NU2. Carriers gain sufficient energy to cause a positive charge or voltage to accumulate on the gate. This hot carrier gate tunneling positive gate voltage could turn the NMOS NU2 device on, again exposing the device to damage from high ESD current This gate action is detrimental to ESD protection, and damage can possibly occur to one or more devices in the string. A device and method is described which greatly enhances the ESD protection capability of the cascaded NMOS device circuitry and limits the possibility of ESD damage to these devices.
The following patents describe ESD protection devices.
U.S. Pat. No. 6,008,974 (Lee et al.) describes a CMOS ESD output protection circuit with a clamping circuit to prevent NMOS damage. The clawing circuit comprises an NMOS transistor, a resistor, and a diode.
U.S. Pat. No. 5,986,867 (Duvvury) discloses an output protection circuit where an NMOS transistor is used as a dummy device.
U.S. Pat. No. 6,091,594 (Williamson et al) shows a CMOS ESD protection circuit where a cascaded NMOS stack is used.
U.S. Pat. No. 6,078,487 (Partovi et al.) shows an ESD circuit with an ESD clamp.
U.S. Pat. No. 6,091,595 (Sharpe Geisler) shows an ESD protection circuit for a 5V output buffer.
U.S. Pat. No. 5,610,790 (Staab et al.), U.S. Pat. No. 6,008,970 (Maloney et al.), and U.S. Pat. No. 5,708,550 (Avery) show related ESD circuits.
Accordingly, it is the primary objective of the invention to provide a novel effective circuit structure, and a circuit development method, for protecting integrated circuits from damage caused by ESD events occurring during circuit operation.
In addition, it is an objective of this invention to provide this ESD protection while maintaining appropriate normal circuit operating parameters of the devices being protected.
It is yet another object of the invention to provide a process method for forming the ESD protection structure that is fully compatible with the manufacturing process of the devices being protected.
The above objectives are achieved in accordance with the embodiments of the invention that describes a process and novel structure for a clamping FET device for the active signal switched NMOS transistor of the complimentary output inverter of CMOS logic devices. A NMOS clamping device has the drain connected to the gate of the output circuit string active switching NMOS that is normally controlled by the signal from the internal circuits. Therefore, the drain of the clamping NMOS device is also connected to the internal circuit signal line. The gate of the clamping device is connected to the output pad through a Pxe2x88x92N diode with the diode negative N side connected to the I/O pad. The NMOS device gate is also connected to a second voltage source, typically ground, through a resistor. The source of the NMOS clamping device is connected directly to ground.
A high voltage from an ESD event causes the diode to operate in reverse breakdown mode thereby conveying a positive voltage to the gate of the clamping device turning it on enabling the active switched NMOS gate to be clamped to ground. Clamping the active NMOS gate to ground prevents the output device from being turned on during the duration of the ESD event by either a logic signal from the internal circuit or the hot carrier effect from the high ESD voltage on the drain. The resistor from the clamping device gate to ground provides the clamping device turn on voltage from the ESD event. The resistor is also in series with the diode, and therefore limits the current generated by the ESD event to protect the diode from damage.
During normal circuit operation the gate of the clamping device is shielded from normal logic signals by the diode, and is essentially grounded through the resistor assuring that the clamping device is in an off state. This prevents any interference with the normal I/O and logic circuit operational characteristics.

Clamping circuit for stacked NMOS ESD protection

Taiwan Semiconductor Manufacturing Company


A device for adjusting a slat of a window blind including a housing, in which a plurality of frames, a rod, a plurality of transmission members, and a plurality of turning members are provided. The rod is meshed with a first rack of each transmission member, and the turning members are respectively meshed with a second rack of each transmission member. The first rack has a plurality of teeth in a line, and the first and the last teeth are shorter than the rest teeth. Furthermore, the first and the last teeth are designed for ratchet, so that the teeth of the rod will slide on and over the first or the last teeth when the user is overturning the rod to protect the teeth of the first rack of the transmission member.

1. Field of the Invention
The present invention relates generally to a window covering, and more particularly to a device for adjusting slats of a window blind.
2. Description of the Related Art
FIG. 1 shows a conventional device for adjusting slats of a vertical window blind. The device includes a rod 200, a turning member 210 connected to the slats, and a transmission member 220 connecting the rod 200 and the turning member 210. The rod 200 is turned by a user to turn the turning member 210 through the transmission member 220, and that may tilt the slats.
In the conventional device, the rod 200, the turning member 210 and the transmission member 220 respectively have teeth meshed with each other, and the teeth have the same height. It is always found that the first and the last teeth on the transmission member 220 are easy to be broken. Usually, it is caused by overturning the rod 200. Therefore, the old design has to be improved.

Device for adjusting slats of window blind


A memory device includes at least one magnetic random access memory cell, which includes: (1) a magnetic tunnel junction having a first end and a second end; and (2) a strap electrically coupled to the second end of the magnetic tunnel junction. The memory device also includes a bit line electrically coupled to the first end of the magnetic tunnel junction. During a write operation, the bit line is configured to apply a first heating current through the magnetic tunnel junction, and the strap is configured to apply a second heating current through the strap, such that the magnetic tunnel junction is heated to at least a threshold temperature according to the first heating current and the second heating current.

MRAM devices have become the subject of increasing interest, in view of the discovery of magnetic tunnel junctions having a strong magnetoresistance at ambient temperatures. MRAM devices offer a number of benefits, such as faster speed of writing and reading, non-volatility, and insensitivity to ionizing radiations. Consequently, MRAM devices are increasingly replacing memory devices that are based on a charge state of a capacitor, such as dynamic random access memory devices and flash memory devices.
In a conventional implementation, a MRAM device includes an array of MRAM cells, each of which includes a magnetic tunnel junction formed of a pair of ferromagnetic layers separated by a thin insulating layer. One ferromagnetic layer, the so-called reference layer, is characterized by a magnetization with a fixed direction, and the other ferromagnetic layer, the so-called storage layer, is characterized by a magnetization with a direction that is varied upon writing of the device, such as by applying a magnetic field. When the respective magnetizations of the reference layer and the storage layer are antiparallel, a resistance of the magnetic tunnel junction is high, namely having a resistance value Rmax corresponding to a high logic state "1". On the other hand, when the respective magnetizations are parallel, the resistance of the magnetic tunnel junction is low, namely having a resistance value Rmin corresponding to a low logic state "0". A logic state of a MRAM cell is read by comparing its resistance value to a reference resistance value Rref, which represents an in-between resistance value between that of the high logic state "1" and the low logic state "0".
In a conventional MRAM cell that is implemented for thermally assisted switching ("TAS"), a storage layer is typically exchange biased by an antiferromagnetic layer, which is adjacent to the storage layer within a magnetic tunnel junction and is characterized by a threshold temperature. Below the threshold temperature, a magnetization of the storage layer is pinned by the exchange bias, thereby inhibiting writing of the storage layer. Writing is carried out by passing a current through the magnetic tunnel junction, thereby heating the magnetic tunnel junction above the threshold temperature and unpinning the magnetization of the storage layer. The magnetic tunnel junction is then cooled to below the threshold temperature with a magnetic field applied, such that the magnetization of the storage layer is "frozen" in the written direction.
While offering a number of benefits, a conventional TAS-type MRAM device suffers from certain deficiencies. Specifically, a current that is passed through a magnetic tunnel junction should be of sufficient magnitude to heat the magnetic tunnel junction above a threshold temperature, which can be about 120° C. or higher. However, passing a current of such magnitude through the magnetic tunnel junction can create stresses on an insulating layer within the magnetic tunnel junction, and repeated writing operations can degrade the insulating layer and reduce an operational life of the MRAM device.
It is against this background that a need arose to develop the MRAM devices and related methods described herein.

Magnetic random access memory devices including heating straps


A semiconductor device includes source electrodes having source fingers, drain electrodes having drain fingers, and gate electrodes having bent portions between steps formed in stepwise side portions of source fingers and steps formed in stepwise side portions of drain fingers and being bent in the bent portions along the source fingers and the drain fingers. A shape of the stepwise side portion of one source finger and that of the stepwise portion of the corresponding drain finger are symmetrical about a midpoint of an imaginary line that connects the other end of the source finger and the other end of the corresponding drain finger.

(i) Technical Field
A certain aspect of the embodiments discussed herein is related to a semiconductor device. Another aspect of the embodiments is related to a semiconductor device with an electrode shaped into steps.
(ii) Related Art
An FET (Field Effect Transistor) may be used as a semiconductor device that amplifies RF signals such as microwaves. The FET is configured to form a source electrode, a drain electrode and a gate electrode on a semiconductor substrate. Japanese Patent Application Publication. No. 2002-359257 discloses a multi-finger type FET in which source electrodes, drain electrodes and gate electrodes are arranged in the form of a tooth comb.
The magnitude of current that flows through an electrode of the semiconductor device is restricted by the tolerable current density, which depends on the material of the electrode. The restricted magnitude of current may not produce high power.

Semiconductor device with source and drain fingers


The present disclosure provides a putter head that has a plurality of deflectable beams or projections for striking a golf ball. Upon impact with the ball, the beams deflect and rebound to impart topspin on the ball, thereby resulting in forward rotation of the ball shortly after impact. In certain embodiments, the striking surface of the putter is comprised of a plurality of generally parallel, vertically spaced, deflectable beams extending horizontally across a front surface of the putter. Each beam extends downwardly from a fixed end to a free end that can contact the ball. In one specific implementation, the beams can be formed directly in the front surface of the putter head. In another implementation, the beams are formed in an insert that is mounted to the front surface of the putter head.

Most golf putters are provided with a smooth ball-striking face, with greater or lesser degree of loft in order to control the distance and direction that a struck golf ball travels. Generally, a golf ball struck by a lofted putter initially travels slightly upwards while spinning backwards, which causes the golf ball to skid or slide across the putting surface for a short distance after impact. Friction between the ball and the putting surface results in a forward moment opposing the backspin which eventually imparts a forward roll to the ball. When a golf ball is rolling forwards rather than skidding or sliding over the putting surface, the ball is less influenced by surface irregularities and the rotational inertia of the ball will cause it to have more of a tendency to continue in the true direction of the putting stroke. Thus, it is desirable to get a ball "rolling" as early after impact as possible.
Various attempts have been made to provide an improved putter that aids in imparting forward roll or topspin to a golf ball. For example, it is known to provide the front face of a putter with upwardly angled, V-shaped projections that are elongated in the direction from the heel to the toe of the putter. The sharp edges of the projections purportedly enhance friction between the putter face and the ball, creating a gripping effect as the putter comes in contact with the ball, which promotes the transfer of topspin to the ball.
There is also a demand for putters that transfer sufficient momentum to the golf ball while providing an improved "feel" for the player. The "feel" of a club generally relates to the sensory feedback that the player receives when the club head strikes the golf ball. In other words, an improved "feel" gives the player a greater sense that the putter head is an extension of the player's hands and the perception that the player is more able to guide the ball along the desired path to the hole. The feel of the putter head is primarily a function of the spring constant (k) of the putter face. The spring constant is generally determined by the Young's modulus of the material, as well as the contact area (i.e., the amount of surface area on the putter face that actually contacts the ball during the putting stroke).
When projections have been used in connection with putters, the projections unfortunately have lacked the proper structure to effectively improve the feel and control of the putter. For example, the projections typically have sharp tips, which collectively form the contact face of the putter. Because the contact area is relatively small, the ball trajectory tends to be less controllable. The lack of sufficient contact area can also result in inconsistencies between putting strokes, since the impact of the club on the ball varies significantly depending upon the location and the angle of the putter face relative to the ball. Additionally, the sharp ends of the projections increase the friction between the club face and the ball, which can result in the club conferring too much spin to the ball so that ball trajectories can be unusual and unpredictable.
To improve the feel of the putter, golf club manufacturers have designed putter heads with soft plastic inserts that are mounted on the face of the putter head. The plastic inserts are mainly directed toward improving the feel of the putter through the use of low modulus material. The plastic inserts generally have a low Young's modulus to improve the feel of the putter, but unfortunately also present certain disadvantages. In particular, plastic inserts have a tendency to lower the sound when the club impacts the ball which causes a lack of acoustic feedback to the player. Additionally, such inserts do not promote the transfer of topspin to the ball to improve control.
Accordingly, there is a need for a golf putter that promotes the transfer of topspin to the ball to improve accuracy while providing improved feel.


A method for warning about lightning activity in wind farms which is suitable for predicting the generation of upward lightning originating from the wind-driven power generators the wind farm and for warning about the possible generation is provided. To that end, in the method the presence or absence of a storm cell in the wind farm and/or in the vicinity thereof, within a radius of less than 400 km, is detected; the local electric field in the wind farm is measured, at least one atmospheric condition is identified or measured under given premises, and the probabilities of the generation of upward lightning originating from the wind-driven power generators of the wind farm are determined depending on the result of the measurements, identifications and detections, a warning signal being transmitted in the event that the determined probability exceeds a given threshold value.

Wind-driven power generators are exposed to lightning strikes due to their height and location. There are two types of lightning strikes: downward lightning strikes and upward lightning strikes (upward lightnings). Downward lightning strikes are the most common, but upward lightning strikes often occur in tall structures. Upward lightning strike activity is known to be greater than 30% in structures over 150 meters high. This percentage increases in tall structures located on mountain tops or in places where the phenomenon known as "thundersnow" takes place. The "thundersnow" phenomenon consists of winter storms characterized by storm clouds with a low charge and with the center of the negative charge being at lower heights (1 to 3 km compared to 6 to 9 km for the summer or convective storms).
Storm warning systems that aim to detect summer storms (relating to high downward lightning activity) are known, such as the one disclosed in US20160291204A1, for example, which is based on magnetic field meters and/or electromagnetic sensors.
International standards cover storm warning systems, such as IEC 62793:2016, for example. Again, this standard describes practices and systems for detecting convective storms (summer storms), but not winter storms in which upward lightning activity can make up 100% of all lightning events. In some wind farms, more than ten upward events occur in a wind-driven power generator during a single winter storm.
Winter storms are hard to detect because all upward events originate from tall structures (wind-driven power generators), and there is no downward lightning activity. In other words, there is no prior lightning activity before upward lightnings originate from the wind-driven power generators.

Method for warning about lightning activity in wind farms


A vehicle roof having at least one cover element, which selectively closes or at least partially exposes a roof opening and which can be adjusted between a closed position and a lowered displacement position and, with respect to a vehicle longitudinal center plane, comprises a carrier element on either side, the carrier element comprising a guide path, which interacts with at least one guide element of a drive carriage for pivoting the cover element, the carriage being guided in a guide rail fixed to the roof. At least one rear-side control slide is disposed on the carrier element and guides the cover element in a guide channel of the respective guide rail during displacement of said element and secures the cover element against pivoting. When pivoting the cover element into the lowered displacement position, the rear-side control slide recedes into the respective guide channel of the respective guide rail while sliding over a ramp.

1. Field of the Invention
The invention relates to a vehicle roof with at least one cover element which optionally closes or at least partially opens up a roof opening.
2. Related Technology
A vehicle roof of this type is known from practice and comprises a cover element which has a carrier element, which constitutes a pivoting or deployment arm for the cover element, along both of the lateral edges of said cover element with respect to a longitudinal center plane of the vehicle. Guide rails are arranged along the lateral edges of the roof opening, which can be closed by means of the cover element, said guide rails being arranged in a manner fixed to the roof and one of the carrier elements being guided displaceably in each thereof when the cover element is actuated. Furthermore, a driving carriage is arranged in each of the guide rails, the driving carriage, for the pivoting of the cover element, interacting with a guide track which is arranged on the respectively assigned carrier element of the cover element. The profile of the guide track defines a pivoting movement of the cover element as the driving carriages are moved in the guide rails, specifically in such a manner that the cover element can be pivoted between a closed position, in which the roof opening is completely closed, a ventilation position, in which a rear edge of the cover element is deployed in relation to a rear, fixed roof section, and a lowered displacement position, in which the cover element can be moved in the longitudinal direction of the vehicle under the rear, fixed roof section in order to open up the roof opening. During the pivoting operation, the cover element is secured against movement in the longitudinal direction of the vehicle by means of "control slides". The control slides are arranged on the carrier elements of the cover element and interact with corresponding recesses on an upper boundary wall of the respective guide rail. When the cover element pivots into the lowered displacement position, the control slides enter a guide channel of the respective guide rail.
The problem with the above-described vehicle roof is that the cover element experiences a sudden offset when pivoting between the closed position and the lowered displacement position. The reason for this is that the carrier elements of the cover element each collide at the vehicle front end of the guide rails with a fixed stop which initiates a switch from the displacement movement into a pivoting movement such that the carrier elements of the cover element are moved upward by the steep rear profile of the carrier element guide tracks which interact with the driving carriages. The control slides, which are guided in the guide rails during the displacement, enter here into corresponding control recesses on the guide rails and thereby secure the cover element from moving in the longitudinal direction of the vehicle. During the lowering movement, the cover element drops rapidly downward along the steep rear profile of the carrier element guide tracks, which interact with the driving carriages, the control slides entering freely into the respective guide track of the relevant guide rail until they strike against a lower guide surface of same.
Furthermore, it is known from practice to control a sliding roof cover element with respect to the pivoting movement thereof by an additional control lever which interacts with a corresponding control element in the relevant guide rail. However, this solution is associated with a multiplicity of components and therefore also with high costs.

Cover element carrier having control slide


A method to form a closely-spaced, vertical NMOS and PMOS transistor pair in an integrated circuit device is achieved. A substrate comprise silicon implanted oxide (SIMOX) wherein an oxide layer is sandwiched between underlying and overlying silicon layers. Ions are selectively implanted into a first part of the overlying silicon layer to form a drain, channel region, and source for an NMOS transistor. The drain is formed directly overlying the oxide layer, the channel region is formed overlying the drain, and the source is formed overlying the channel region. Ions are selectively implanted into a second part of the overlying silicon layer to form a drain, channel region, and source for a PMOS transistor. The drain is formed directly overlying the oxide layer, the PMOS channel region is formed overlying the drain, and the source is formed overlying the channel region. The PMOS transistor drain is in contact with said NMOS transistor drain. A gate trench is etched through the NMOS and PMOS sources and channel regions. The gate trench terminates at the NMOS and PMOS drains and exposes the sidewalls of the NMOS and PMOS channel regions. A gate oxide layer is formed overlying the NMOS and PMOS channel regions and lining the gate trench. A polysilicon layer is deposited and etched back to form polysilicon sidewalls and to thereby form gates for the closely-spaced, vertical NMOS and PMOS transistor pair.

(1) Field of the Invention
The invention relates to a method of fabricating semiconductor devices, and more particularly, to the fabrication of high packing density, vertical CMOS devices in the manufacture of an integrated circuit device.
(2) Description of the Prior Art
In current CMOS sub-micron technology, MOS transistors are formed horizontally across the surface of the semiconductor substrate. Such technology requires very tight control of the polysilicon line width critical dimension (CD). To achieve this precision, lithography and etch techniques must constantly be improved and are, in fact, limiting further process scaling.
A second approach to CMOS integration is to fabricate the transistor structures vertically into the semiconductor substrate. The footprint, or surface area requirement, for each transistor or logic device can be reduced by using the depth of the substrate. Of particular importance in such vertical integration schemes are issues such as metal interconnection, or wiring, process complexity, self-alignment, and compatibility with existing process techniques.
Several prior art approaches disclose methods to form vertical devices in the semiconductor substrate. U.S. Pat. No. 5,285,093 to Lage et al teaches a memory cell having a trench structure. A six layer stack of alternating p-type and n-type silicon is cross-sectioned by a trench. A layer of oxide is deposited. A polysilicon layer is deposited and forms a common gate overlying the p-type and n-type layers exposed by the trench. A memory device is constructed using this structure. U.S. Pat. No. 5,641,694 to Kenney discloses a method to form a vertical transistor and memory cell. A trench is etched through a stack of p-type and n-type layers. Additional epitaxial layers are grown inside the trench to form the transistor nodes. IBM Technical Disclosure Bulletin, May 1985, pp. 7046-7048 teaches a method to form a latch-up resistant CMOS inverter device. An n-channel transistor is formed at the bottom of a trench. A p-channel transistor is formed laterally, at the substrate surface, between trenches. U.S. Pat. No. 5,723,370 to Ning et al discloses a method to form vertical CMOS devices on a trench sidewall. The method does not take advantage of buried layers. Trenches are etched into the semiconductor substrate after formation of STI. Polysilicon is then deposited in the trench bottom. The polysilicon is then selectively ion implanted to form p-type and n-type regions. Gate oxide is deposited on the trench sidewalls. Ions are implanted, using an angled implantation technique, into the sidewalls of the trench to form channel regions. Additional levels of polysilicon and oxide are deposited into the trench to build up devices. U.S. Pat. No. 5,308,778 to Fitch et al discloses a method to form vertical transistors and logic gates inside of trenches. A stack of dielectric and polysilicon is formed overlying the substrate. A trench is etched through the stack. A diffusion region is formed at the trench bottom. Gate oxide is grown on the exposed polysilicon of the sidewalls. Doped silicon regions are then grown by epitaxy on the inside of the trench to thereby form the drain, channel, and source regions. U.S. Pat. No. 5,757,038 to Tiwari et al teaches a method to form ultra-thin channel FET devices. A three-layer stack is epitaxially grown overlying the substrate. A pillar structure is progressively formed by etching. U.S. Pat. No. 5,480,838 to Mitsui teaches a method to form a double-gate MIS transistor. Pillars are formed by etching into the semiconductor substrate. Ion implantation is used to form source and drain regions.
A principal object of the present invention is to provide an effective and very manufacturable method of fabricating closely-spaced, CMOS inverters in the manufacture of integrated circuit devices.
A further object of the present invention is to provide a method to fabricate closely-spaced, CMOS inverters by forming vertical NMOS and PMOS transistors.
A yet further object of the present invention is to provide a method to fabricate vertical NMOS and PMOS transistors in a silicon implanted oxide substrate.
Another yet further object of the present invention is to fabricate vertical CMOS transistor using a trench to separate the NMOS and PMOS devices and to provide access to the common drain of the inverter pair and the sidewalls of the channel regions.
Another yet further object of the present invention is to connect the CMOS inverter pair using minimal area and utilizing self-aligned silicide (salicide) to reduce contact resistance.
Another object of the present invention is to achieve a novel, closely-spaced, CMOS inverter device using existing processes technology combined in a unique arrangement.
In accordance with the objects of this invention, a method to form a closely-spaced, vertical NMOS and PMOS transistor pair in an integrated circuit device is achieved. A substrate comprises silicon implanted oxide wherein an oxide layer is sandwiched between underlying and overlying silicon layers. Ions are selectively implanted into a first part of the overlying silicon layer to form a drain, channel region, and source for an NMOS transistor. The drain is formed directly overlying the oxide layer, the channel region is formed overlying the drain, and the source is formed overlying the channel region. Ions are selectively implanted into a second part of the overlying silicon layer to form a drain, a channel region, and a source for a PMOS transistor. The drain is formed directly overlying the oxide layer, the PMOS channel region is formed overlying the drain, and the source is formed overlying the channel region. The PMOS transistor drain is in contact with said NMOS transistor drain. A gate trench is etched through the NMOS and PMOS sources and channel regions. The gate trench terminates at the NMOS and PMOS drains and exposes the sidewalls of the NMOS and PMOS channel regions. A gate oxide layer is formed overlying the NMOS and PMOS channel regions and lining the gate trench. A polysilicon layer is deposited overlying the gate oxide layer. The polysilicon layer is etched back to form polysilicon sidewalls and to thereby form gates for the closely-spaced, vertical NMOS and PMOS transistor pair in the manufacture of the integrated circuit device.
Also in accordance with the objects of this invention, a closely-spaced, vertical NMOS and PMOS transistor pair is achieved comprising, first, a substrate comprising silicon implanted oxide wherein an oxide layer is sandwiched between underlying and overlying silicon layers. A vertical NMOS transistor is in the overlying silicon layer. The vertical NMOS transistor comprises, first, a drain overlying the oxide layer. A channel region overlies the drain. A source overlies the channel region. A gate trench exposes a top surface of the drain and a vertical surface of the channel region. Finally, a gate comprises a polysilicon sidewall spacer adjacent to the vertical surface of the channel region with a gate oxide layer therebetween. Finally, a vertical PMOS transistor is in the overlying silicon layer. The PMOS transistor comprises, first, a drain overlying the oxide layer. The drain contacts the vertical NMOS transistor drain. A channel region overlies the drain. A source overlies the channel region. A gate trench exposes a top surface of the drain and a vertical surface of the channel region. Finally, a gate comprises a polysilicon sidewall spacer adjacent to the vertical surface of the channel region with a gate oxide layer therebetween.

Method to form a self-aligned CMOS inverter using vertical device integration

Chartered Semiconductor Manufacturing Ltd.


An air-filled flashing light decorator that has one or several ducts not connecting to the air chamber are inside the air-filled bag, the top and bottom of each duct connect to the LED light set wrapped with rubber tube and are fixed with binders, or the LED light set are fixed on the surface of the air-filled decorator; a through hole is on the bottom of the duct to fix the power wire and for power wire to pass through, such makes the LED light set and power wires install and fix inside the air-filled decorator, or the LED light set are fixed on the surface of the air-filled decorator, no hanging stable problem, nor causes the overall out-looking interference issue.

I. Field of the Invention
This invention relates generally to an air-filled decorator and, more specifically, to an air-filled flashing light decorator that aims larger size air-filled decorators such as Christmas tree, superman, Santa Claus, pumpkin . . . , with the smooth surface, these decorators are not easy to have flashing light stable, surrounding LED light might interfere the overall out-looking; with minor modification to have one or several ducts inside the air-filled decorators, the top of each duct has the LED light set wrapped with rubber tube and fix by a binder, or fix the LED light set that is on the surface of the air-filled decorator with binder, then has a through hole on bottom of the duct for the LED light and power wires to pass and be fixed, such makes the LED light and power wires installed inside the air-filled decorator; the LED light or light set can be fixed on the surface of the air-filled decorator without hanging and stable problem, nor causes the overall out-looking interference issue.
II. Description of the Prior Art
Heretofore, it is known that people pay more attention to environment protection and security consideration, and the production requirement of cartoonized decorators in demonstration makes the air-filled decorators such as Christmas tree, superman, Santa Claus, flying boat . . . are getting more and more popular; in order to be more noticeable, some flashing light are added onto those air-filled decorators, however the flashing light are not easy to be stable on the air-filled decorators, or the flashing light might not fit the overall out-looking.


A bird feeder comprising a hopper suspended above ground by a hanger for holding granular bird seed, and a collapsible feed trough through which the seed flows. The trough consists of a series of pivotally interconnected ramps that unfold during deployment into a zigzag configuration. An uppermost ramp is fixedly secured to the hopper, and successive lower ramps are pivoted to each other in an angular “zigzag” arrangement. Each ramp is inclined relative to the horizontal approximately thirty degrees. Each ramp has a discharge hole at its lower end that is large enough for seed to fall through to a lower ramp. In response to vibration, seeds exit the hopper and travel through the trough. When the feeder is to be stored or shipped, the trough is collapsed by folding the ramps into a nested, retracted position.

1. Field of the Invention
The present invention relates generally to hanging bird feeders. More particularly, the present invention relates to feeders that discharge dry bird seed through a lower trough that is connected to an upper hopper.
2. Description of the Related Art
A large variety of bird feeders are known in the art. Many comprise an upright hopper that is suspended from an elevated support such as a tree branch or the like by a suitable hook or clasp connected to the body. Often the hopper has a plurality of perches adjacent various outlet orifices disposed about the feeder periphery. The feed outlets may be simple holes, slits, screens, or gated openings that allow access to the stored feed. In some designs, there is a tray or other flat, planar surface adjacent the feed outlet upon which feed is deposited.
With typical designs, feed drops from the hopper through the outlet orifices in response to gravity. Some designs include chutes for guiding the food from the hopper to the serving area. One or more birds that land upon suitable perches for temporary support can then access and eat the food.
One problem is that much of the birdseed dispensed by typical feeders is concentrated in an irregular pile adjacent the hopper outlet. Even when feed drops into a lower tray or bowl, it tends to bunch up. If the feed were spread out evenly over a larger area, more birds would be able to concurrently visit the feeder, providing more entertainment or excitement for the feeder owner and others observing the feeder and its visitors.
Another problem with common bird feeders is that there is not enough physical separation between neighboring birds. Many less aggressive birds, for example, will postpone eating at a bird feeder until larger or more dominant species that are already there finish and fly off. However, if a bird feeder can somewhat isolate the birds from one another, and space out the regions upon which feed is placed, then more than several birds, often involving more than one species, will feel comfortable eating together.


Example approaches for providing recommendations for connecting to servers are described. In an example, a category, from a plurality of categories, is identified for each of a plurality of servers providing a respective service. each server is grouped under the category identified for the respective server. The category indicates a recommendation for connecting to servers grouped under the category. The category is associated with a service, from a plurality of services, provided by the respective server.

In a network environment, such as a Wireless Local Area network (WLAN), servers may broadcast services for being accessed by client devices. A WLAN may include access points (APs) which enable wireless client devices to connect to a network, such as the internet and/or a closed WLAN like a home Wi-Fi network or an office Wi-Fi network, to access the broadcasted services. The APs connect to client devices within the WLAN and may also act as a point of interconnection between the client devices and the severs. Each AP can serve multiple client devices within a defined network area.

Server recommendations for broadcasted services

Hewlett Packard Enterprise Development LP