A method of producing magnesium-based hydrides is provided that can enhance production efficiency while securing safety. An Mg ingot including Mg is cut to make a number of Mg flakes. An accumulated matter made by accumulating a number of Mg flakes are compressed and shaped to form a compressed matter of Mg flakes. The compressed matter of Mg flakes is placed in hydrogen gas such that Mg reacts with hydrogen gas, to produce magnesium-based hydrides. Since the Mg flakes have a low risk of explosion, this allows safer production of magnesium-based hydrides. Moreover, compression of the Mg flakes causes distortion in the flakes, which makes it easy for Mg to react with hydrogen gas, allowing enhancement in yield of magnesium-based hydrides.

1. Field of the Invention
The present invention relates to a method of effectively producing a magnesium-based hydride that generates hydrogen when reacted with water.
2. Description of the Related Art
Like an alkali metal hydride, MgH2 (magnesium hydride) is an ionic bond hydride formed of the bonding of Mg2+ and H− and is generated by causing Mg (magnesium) to react with high pressure hydrogen under heating. The reaction for generating MgH2 is represented by the following formula (1).Mg+H2→MgH2  (1)
The powder of MgH2 is charcoal gray in color and stable in air. In water, however, it reacts with water and decomposes while releasing hydrogen. Hence, it is expected that MgH2 can be used as a hydrogen storage material that releases hydrogen by storing hydrogen in advance and by reacting with water as necessary. The reaction of MgH2 with water is represented by the following formula (2).MgH2+2H2O→Mg(OH)2+2H2  (2)
Japanese Patent Publication No. 4083786 discloses a method of effectively producing MgH2. The technique disclosed in Japanese Patent Publication No. 4083786 keeps a material powder including magnesium in the atmosphere of hydrogen gas and removes the coating from the surface of Mg by maintaining the temperature and pressure of hydrogen gas at temperature and pressure at which Mg and H2 is thermodynamically stable. Next, the temperature and pressure of hydrogen gas are maintained at temperature and pressure at which MgH2 is thermodynamically stable, to cause Mg to react with H2. This method enables high-yield production of MgH2.

Method of producing magnesium-based hydrides


A router stores core file into a local flash memory after detecting a shutdown event. In order to increase the amount of core file data that can be stored, the core file is first compressed before being downloaded into the local flash memory. Because the flash memory is local, the network device is not required to dump the core file over an external network to an external network server. Thus, network interface elements in the network device do not have to be functional in order for the core dump to be successful. During the shutdown routine, interrupts are disabled for all processing elements that are not needed to perform the core download. The core dump is therefore faster and more reliable and allows more effective system debugging than present core download procedures.

This invention relates to a method and apparatus for debugging faults occurring in a router or other network device and more particularly to compressing core file and storing the compressed core file into an internal flash memory.
Network servers and other types of network devices often experience unrecoverable faults. One example of an unrecoverable fault occurs when a routine writes an invalid address value into core memory. When a process tries to access the illegal address value, a fault occurs. For example, a process may request a memory address for a status register used for conducting a direct memory access (DMA) operation. If the memory address is invalid, a fatal error occurs when the process attempts to access the memory address, which causes the router to reset.
Viewing core files is vital to resolving fatal fault errors. A core file is essentially a copy of DRAM which contains the program, program pointers, program variables, etc. The core file provides a snap-shot of the router at the time the fault occurred. DRAM is used to meet performance requirements of the system and since the contents of the DRAM are destroyed after a reset operation, the core file must be downloaded to another storage device. Routers can be equipped with some flash memory. However, due to the cost of flash memory, the flash memory is not large enough to hold all DRAM contents. Thus, the core file must be downloaded to an external server connected to the router through a local area network (LAN). The core file can then be analyzed by an engineer from a computer or workstation to identify the source of the fault.
The problem with copying a core file to an external device is that the fault condition causing the router to shutdown may be caused by a process that must be operational in order to download the core file. For example, the fault may be caused by a software error with a network protocol or LAN media drivers. If these network interface processes are not operational, the core file cannot be successfully downloaded to an external network device. Thus, in the past, a special image had to be created in order to investigate the fault. The special image is produced by modifying operating code to print out specific identified information before the fault occurs. Generating special images to locate faults requires a large amount of trial and error which is extremely time consuming. Alternatively, the router is taken out of production so that the current content of the main memory can be analyzed with a ROM monitor.
Accordingly, a need remains for a faster more reliable way to save core file after a fault condition occurs in a network device.

Apparatus and method for downloading core file in a network device


A sensor portion of an integrated photo sensor is composed of a silicon substrate, a photo diode and a signal processing element which are provided on the silicon substrate separately from each other. A shading film is provided on a surface region of the substrate except a region above the photo diode, and an intermediate insulating film made of silicon oxide is provided between the silicon substrate and the shading film. The intermediate insulating film includes a part extending on a light-receiving region of the photo diode, and the part is covered with light transmittable gel having a refractive index approximately equal to that of the intermediate insulating film.

1. Field of the Invention
This invention relates to an integrated photo sensor provided by integrating a light-receiving element and elements for a signal processing circuit on a semiconductor substrate.
2. Description of the Related Art
JP-A-10-289994 proposes an integrated photo sensor. The photo sensor has a light-receiving element and signal processing circuit elements that are integrated on one chip, and a shading film for selectively determining a light-receiving region on the chip surface. It is considered that this structure reduces the chip size as small as possible for the integration, and prevents erroneous operations of the signal processing circuit elements ascribed to light incident on the elements. This kind of sensor is generally covered with a protective film made of resin such as silicone gel or the like for protection.
Specifically, the shading film covers a region other than the light-receiving element, and an insulating film (intermediate insulating film) such as a silicon oxide film underlies the shading film to assure electrical insulation from each of the signal processing circuit elements (each element for a digital circuit, an analog circuit, adjustment, or the like).
If the intermediate insulating film exists on the light-receiving element, however, optical characteristics vary due to interference of light in accordance with wavelength of light. To prevent this variation in optical characteristics, the intermediate insulating film is removed not to exist on the light-receiving element. The removal of the intermediate insulating film, however, increases the manufacturing cost. In addition, in this case, a protective film is disposed on the light-receiving element, which can vary sensor sensitivity.
JP-A-8-32045 discloses another integrated photo sensor. In the photo sensor, an intermediate insulating film remains on a light-receiving element. Further, a film (an oxide film formed by plasma CVD, and hereinafter referred to as a P--SiO.sub.2 film) having a refractive index close to that of the intermediate insulating film is disposed on the intermediate insulating film provided on the light-receiving element so that light is restricted from being reflected at the interface between the P--SiO.sub.2 film and the intermediate insulating film.
In this structure, since the thickness of the P--SiO.sub.2 is thin, the reflection of light at the interface can be prevented effectively as compared to a case where a SiN film having a largely differing refractive index is left on the light-receiving element. However, since it is difficult to eliminate the effects by interference, the variation in optical characteristics is not prevented sufficiently.


A method for generating a set of at least two sequences is provided. This method selects at least one sequence from each of at least two sequences based on different lengths, including first and second types of sequences, and generates a set of at least two sequences using the selected sequences. Another method selects at least one sequence from a first type of sequences and at least one sequence from a second type of sequences generated by modulating the first type of sequences using a different type of sequences, and generates the set of at least two sequences using the selected sequences. To generate sequences based on a length corresponding to available subcarriers excluding a DC subcarrier, another method generates sequences such that the sequences are continuously arranged in a region excluding the DC subcarrier using frequency-domain cyclic shift while none of the sequences is allocated to the DC subcarrier.

First, reference is made to sequences that are used in OFDM, OFDMA, and 3GPP LTE systems to which the above methods are applied.
Recently, the demand for high-speed data transmission has rapidly increased. The OFDM scheme is advantageous for high-speed transmission and thus has been adopted as a transmission scheme for a variety of high-speed communication systems. The following is a description of Orthogonal Frequency Division Multiplexing (OFDM). The basic principle of the OFDM is to divide a high-rate data stream into a large number of low-rate data streams and to simultaneously transmit the low-rate data streams through a number of carriers. Each of the carriers is called a subcarrier. Since the subcarriers of the OFDM are orthogonal to each other, it is possible for the receiving side to detect the frequency components of the subcarriers even if they overlap each other. The high-rate data stream is converted into multiple low-rate data streams through a serial-to-parallel converter. The parallel low-rate data streams produced through the conversion are multiplied by respective subcarriers and are then combined to be transmitted to the receiving side. The OFDMA is a multiple access method which allocates subcarriers in a total band in the OFDM system to multiple users according to transfer rates requested by the users.
The OFDM scheme has a problem in that the Peak-to-Average-Power Ratio (PAPR) or Cubic Metric (CM) of transmission signals is very high. Since the OFDM scheme transmits an OFDM signal in the frequency domain using multiple subcarriers through IFFT, the magnitude of the amplitude of the OFDM signal can be represented by the sum of the magnitudes of the multiple subcarriers. However, if the multiple subcarriers are in phase with each other, a signal having a high peak similar to an impulse occurs in the OFDM signal, thereby causing the OFDM signal to have a very high PAPR or CM. Such transmission signals according to the OFDM reduce the efficiency of a high-output linear amplifier and operate in a nonlinear region of the high-output linear amplifier, thereby causing signal distortion.
The following is a description of channels and sequences for use in the channels in a newly-proposed 3rd Generation Partnership Project (3GPP) Long Term Evolution (LTE) system.
Generally, in order to perform communication with a base station, a terminal (or user equipment) first carries out synchronization with the base station over a synchronization channel (SCH) and conducts a cell search. The SCH may have a hierarchy such that it is divided into a Primary Synchronization channel (P-SCH) and a Secondary Synchronization channel (S-SCH).
The cell search is a series of processes that a terminal performs to acquire the ID of a cell to which the terminal belongs. The cell search is generally classified into an initial cell search, which a terminal performs when it is powered on, and a neighbor cell search through which a terminal in a connected or idle mode searches for a neighbor base station.
It is preferable that the P-SCH used in a communication system such as OFDM or SC-FDMA, which uses multiple orthogonal subcarriers, satisfy the following requirements.
First, auto-correlation properties in the time domain for SCH sequences should be good to allow the receiving side to achieve high detection performance.
Second, the complexity due to synchronization detection should be low.
Third, the Peak-to-Average Power Ratio (PAPR) or CM should be low.
Fourth, if an SCH can be used for channel estimation, it is desirable that its frequency response have a constant value. That is, it is known that a flat response in the frequency domain exhibits the best channel estimation performance.
A type of sequence, which is under discussion for use in channels that are used in the LTE including the SCH described above, is a Zadoff-Chu sequence which is a Constant Amplitude Constant Auto-Correlation (CAZAC)-type sequence.
Two types of CAZAC sequences, which are mainly used, are Generalized Chirp-Like (GCL) CAZAC and Zadoff-Chu CAZAC sequences. The Zadoff-Chu CAZAC sequence is given as follows.
                                          a            M                                          (            n            )                          =                                                                                {                                                                                exp                                                              (                                                                        -                          j                                                                                π                                                                                Mn                            2                                                    /                          L                                                                    )                                                        ,                                                                              when                                                                                L                                                                                is                                                                                even                                                                                exp                                                              (                                                                        -                          j                                                                                π                                                                                Mn                                                                                (                                                              n                                +                                1                                                            )                                                                                /                          L                                                                    )                                                        ,                                                                                when                                                                                L                                                                                is                                                                                odd                                    ,                                                                                MATHEMATICAL                                                  EXPRESSION                                                  1
where "n" denotes a sequence index, "L" denotes the length of the CAZAC sequence, and "M" denotes a sequence ID. Here, "M" can be represented by a set of natural numbers which are relatively prime to "L".
When the Zadoff-Chu (ZC) CAZAC sequence given as Mathematical Expression 1 is represented by c(k;N,M), it has the following three properties.
                                                                    c                                            (                                  k                  ;                  N                  ;                  M                                )                                                          =          1                                                                    (                                    for                                                                                all                                                                                k                        ,            N            ,            M                    )                                    MATHEMATICAL                                                  EXPRESSION                                                  2                                                      R            MN                                          (            d            )                          =                  {                                                                      1                  ,                                                                              (                                                            for                                                                                d                                        =                    0                                    )                                                                                0                  ,                                                                              (                                                            for                                                                                d                                        ≠                    0                                    )                                                                                MATHEMATICAL                                                  EXPRESSION                                                  3                                                      R                                          M                1                            ,                                                M                  2                                ;                N                                                                    (            d            )                          =                  p                                                    (                                    for                                                                                all                                                                                M                1                                      ,                                          M                2                                                                                and                                                                                N                                )                                    MATHEMATICAL                                                  EXPRESSION                                                  4
Mathematical Expression 2 indicates that the magnitude of the CAZAC sequence is always 1 and Mathematical Expression 3 indicates that the auto-correlation function of the CAZAC sequence is represented by a delta function. Here, the auto-correlation is based on circular correlation. Mathematical Expression 4 indicates that the cross-correlation always has a constant value if "N" is a prime number.
In the case of CAZAC sequences, a total of L−1 sequences can be generated if the required length "L" of each sequence is a prime length. However, the number of sequences that can be generated is significantly reduced if the sequence length "L" is not a prime length. The following are methods which can be suggested to solve the problem in the case where the sequence length "L" required for a communication system is not a prime length due to the resource block length or the like.
One of the methods is a truncated sequence generation method.
FIG. 1 illustrates a method of generating sequences according to the truncated sequence generation method.
In this method, when a length "L" required in the system is not a prime length, a prime "X" greater than the length "L" is used as the length "L" in Mathematical Expression 1 to generate sequences. Thereafter, sequences with a length greater than "L" among the generated sequences are truncated to the length "L".
The truncated sequence generation method can increase the number of sequences. However, since the truncated sequence generation method truncates generated sequences, the method degrades both the auto-correlation property, which requires that the auto-correlation have a value of "1" when the delay is zero and have a value of "0" when the delay is not zero as represented in Mathematical Expression 3, and the cross-correlation property which requires that the cross-correlation always have a constant value as represented in Mathematical Expression 4. In addition, if sequences with bad correlation properties are removed, it cannot be guaranteed that the number of sequences is L−1. Truncating the generated CAZAC sequences may also degrade the low-PAPR properties of CAZAC sequences.
In One technique that has been suggested to overcome these problems, a maximum prime length "X" less than the length "L" required in the communication system is selected to generate a CAZAC sequence and padding is inserted into a portion having a length of "L−X".
FIG. 2 illustrates a method of generating sequences according to the padded sequence generation method.
According to the padded sequence generation method, if a length "L" required in the system is not a prime length, a prime "X", which is the greatest among primes less than the length "L", is used as the length "L" in Mathematical Expression 1 to generate a sequence. Thereafter, a zero padding having a length C2 corresponding to "L−X" is added to the generated sequence C1.
In this padded sequence generation method, the portion for correlation calculation of the sequence is set to the C1 portion of FIG. 2 to identify the sequence, thereby preventing the degradation of the auto-correlation and cross-correlation properties that would occur due to the truncation of generated sequences as shown in FIG. 1. However, the padded sequence generation method may also suffer from the degradation of the correlation and PAPR properties due to the zero padding C2 in consideration of the entire length of the sequence generated according to the method.
One method similar to that described with reference to FIG. 2 is a cyclic extension method. In the cyclic extension method, if the length "L" required in the system is not a prime length, a prime "X", which is the greatest among primes less than the length "L", is used as the length "L" in Mathematical Expression 1 to generate a sequence. Thereafter, a portion having a length C2 corresponding to "L−X" is copied from part of a previously generated sequence and is then added to the generated sequence C1 to generate a sequence having a length "L".
This method can reduce the degradation of the correlation and PAPR properties, compared to the zero-padded sequence generation method.
The following is a description of the case of generation of a set of two or more sequences for use in a specific channel.
Important considerations, when designing sequences in a sequence-based transport channel taking into consideration the above facts, include the Peak-to-Average Power Ratio (PAPR) or Cubic Metric (CM) properties, the (periodic and aperiodic) auto/cross-correlation properties, etc.
However, in the case where a set of two or more sequences for use in a specific channel is generated using sequences generated based on the same length or using the same type of sequences, it is difficult to satisfy all the requirements that the PAPR or CM properties, the correlation properties, etc., be better than a certain level.

Method for generating 2 or more sequence set, and method for generating sequence for the same


Tools and techniques are described for estimating web accessibility and remediation efforts. One or more web accessibility standards can be indicated to be included in the effort estimate. A user can indicate which individual guidelines are to be included in standard test effort estimates by selecting individual guidelines, sub-guidelines or priority or success criteria levels. Standard test effort estimates are calculated based on test factors associated with the indicated individual guidelines or sub-guidelines. A total test effort estimate is calculated based on the standard test effort estimates and one or more web page counts, and a web accessibility and remediation effort estimate is calculated based on the total test effort estimate. A framework implementing the effort estimation methods can comprise multiple spreadsheets for use within a spreadsheet application running on a computing device.

The World Wide Web needs to be accessible to the disabled population, which comprises a significant number of people worldwide. Accessibility design can allow websites to be accessed by users who are visually, hearing, motor or cognitively impaired. Difficulties encountered by such users when accessing a web site are many, and include the inability to view or hear content, difficulty in typing or moving a mouse and the inability to differentiate between colors. Accessibility challenges are intensified in Web 2.0 scenarios, as users may not produce accessible content. Various web accessibility standards have been established to aid web developers in producing accessible web pages and content. Such standards include W3C Web Content Accessibility Guidelines versions 1.0 and 2.0 (WCAG 1.0 and WCAG 2.0), U.S. Section 508 of the Rehabilitation Act of 1973 (Section 508) and those set forth in the Disability Discrimination Acts of Australia and the United Kingdom (DDA Australia, DDA UK).

Estimation of web accessibility assessment and remediation efforts


A paliperidone double-layered osmotic pump controlled release tablet and the preparation method thereof are disclosed. The double-layered osmotic pump controlled release tablet comprises a rigid membrane, a push layer, a drug layer, an isolation layer and an aesthetic coating, wherein the rigid membrane contains a semi-permeable polymer, a porogen and/or a plasticizer and has one or more drug release orifices on one end, the push layer comprises an expanding material, an osmotic agent, a binder, a colorant and a lubricant, the drug layer contains a pharmaceutically active ingredient, a hydrophilic polymer, an osmotic agent, a colorant, a lubricant and an antistatic agent, the isolation layer is located between the inner surface of the rigid membrane and the push layer, and contains a hydrophilic polymer. The paliperidone double-layered osmotic pump controlled release tablet shows an increasing drug release rate at early stage and keeps a constant drug release rate at later stage.

Schizophrenia, which is characterized by the change of basic personality, the schism of thinking, feeling and behavior, and the disharmony of psychomotility and surroundings, is a most common type of mental illness and belongs to the severe type. Schizophrenia mainly occurs in young and middle-aged people without organic change, and it is a functional psychosis. Patients suffering from schizophrenia generally have no impediment in consciousness and intelligence, but when there is schizophrenic attack, it not only affects the labor capacity of the patients, but also exerts great influence on working, studying, living and socializing of the patients themselves. Medication therapy is one of the most commonly-used and effective treatment methods so far, and it can not only effectively control the schizophrenic symptoms, but also significantly control and reduce the frequency and intensity of the onset of the disease.
Antipsychotics are usually classified into two categories of typical and atypical according to the mechanism of action: (1) typical antipsychotics (traditional antipsychotics), whose representatives include chloropromazine, haloperidol and the like; (2) atypical antipsychotics (nontraditional antipsychotics), whose representatives include paliperidone, clozapine, risperidone and the like. Compared with the traditional medicines, the atypical antipsychotics have lower affinity with dopaminergic D2 receptor, but have higher affinity with 5-hydroxytryptamine and noradrenergic receptor. Meanwhile, atypical antipsychotics have broad treatment spectrum and significant effect on negative symptoms when compared to traditional medicines, and they have high security, fewer adverse effect and low dosage, significantly improving the compliance of the patients.
Paliperidone (9-hydroxyrisperidone), which is a benzoisoxazole derivative, is a new type of antipsychotic, and the exact mechanism of action thereof is still unclear. It is now thought that paliperidone blocks the signal transmission of neurotransmitters in brain of the patients by blocking dopaminergic (D), 5-hydroxytryptamine-2A (5HT2) and adrenergic receptors. Paliperidone has an oral bioavailability of 28%, a plasma protein binding rate of 74%, a half-life of the terminal elimination phase of about 23 h, and an apparent volume of distribution of 487 L. The major adverse effects after oral administration of paliperidone include anxiety, somnolence, dizziness, constipation, extrapyramidal symptoms and the like.
U.S. Pat. Nos. 5,158,952; 4,804,663; 4,352,811 and 4,458,076 describe in detail the paliperidone compound and preparation process thereof.
Chinese patent publication No. CN101,264,084 provides a method for the treatment of psychiatric patients having or at risk of hepatic impairment, which comprises administering a therapeutically effective dose of paliperidone, its pharmaceutically acceptable acid addition salts, enantiomer and esters thereof to psychiatric patients in need thereof.
In the international application Nos. WO 00/35419, WO 96/31201, WO 01/34120 and U.S. Pat. Nos. 5,654,008; 5,650,173; 5,770,231; 6,077,843; 6,368,632; 6,110,923; 5,695,168; 5,692,477; 5,871,778; 5,656,299, paliperidone is used as the model drug to prepare various dosage forms such as liquid gelatin capsule, transdermal patch, long-acting injection implant and the like, but the preparation of osmotic pump controlled release tablet using paliperidone is not disclosed.
Osmotic pump controlled release tablet is an oral controlled release drug delivery system based on osmosis, which is a general technology for the preparation of sustained/controlled release dosage form. U.S. Pat. Nos. 3,845,770; 3,916,899; 3,995,631; 4,008,719; 4,160,020; 4,034,758; 4,327,725; 4,578,075; 4,681,583; 4,783,337; 5019397; 5,156,850 describe the osmotic pump controlled release technology in detail, which are incorporated herein by reference. Osmotic pump controlled release dosage form usually has the following advantages: (1) it possesses a preset drug-release kinetic behavior; (2) it is less influenced by the factors such as pH of the medium, gastrointestinal peristalsis and food; and has a good relevance between in vivo and in vitro; (3) it is capable of avoiding the phenomenon of large fluctuation range of blood concentration caused by common oral dosage forms; (4) it is capable of reducing the frequency of administration, and improving the compliance of patients.
On the basis of above advantages of the osmotic pump controlled release tablet, paliperidone may be combined with the osmotic pump controlled release drug delivery system to prepare paliperidone osmotic pump controlled release tablet, as a preferred oral osmotic (OROS) dosage form, so as to further reduce the neural adverse reactions (mainly extrapyramidal symptoms) of atypical antipsychotics, to decrease the fluctuation of blood concentration, to increase therapeutic effect, and to improve the compliance of patients.
At present, a commercially available paliperidone sustained release tablet (trade name: Invega) is a benzoisoxazole antipsychotic developed by Janssen L P, a member of Johnson & Johnson, US, and it was approved by FDA for marketing on Nov. 29, 2005, which was indicated for the treatment of schizophrenia and bipolar mania.
Chinese patent publication No. CN1,684,670A discloses a dosage form of substantially releasing paliperidone and preparation method thereof. The sustained release dosage form provides a therapeutically effective plasma concentration of paliperidone when administered once daily. The capsule-shaped sustained release tablet containing paliperidone of the invention is orally administered to release paliperidone at a substantially ascending release rate during the prolonged period of time. This invention describes in detail the preparation method of paliperidone capsule-shaped osmotic pump controlled release tablet, the main excipient of the tablet core is a polymeric material—polyoxyethylene. Unfortunately, however, we have found that the three-layered capsule shaped osmotic pump controlled release tablet still has some disadvantages for the following reasons, for example:
(1) It needs a special preparation process with a high production cost. The preparation process of the three-layered osmotic pump controlled release tablet is comparatively complicated, wherein it requires to prepare two kinds of drug layer particles with different drug contents and determined respectively the drug content, and then press into tablet, and thus the preparing period is long with more workload. The common used doses of paliperidone include 3 mg, 6 mg, and 9 mg, which belong to the low dose drug, and thus paliperidone has high requirements for content uniformity of the tablet core. But for a three-layered tablet, it is more difficult to achieve a satisfactory content uniformity Therefore, the preparation of a three-layer capsule shaped osmotic pump controlled release tablet requires a specific tablet compressor (three-layered tablet press), with a higher machining precision.
(2) The main excipient for tablet core has a poor thermal stability. Polyoxyethylene is a kind of high molecular polymer with poor thermal stability and which has low glass transition temperature (62˜67° C.). Due to the above features, it has the following problems during the industrial production and storage. (i) It is difficult to dry off the solvent during granulation process. The drying temperature for polyoxyethylene is generally less than 40° C., thus easily leading to problems of insufficient dryness and high residue of organic solvent; and if a complete dryness is required, it requires a relatively long drying duration, which results in higher production cost. (ii) The storage temperature of the tablet should not be too high, and the tablet has to be stored in a cool, dark place, which increases the storage cost. Meanwhile, a high storage temperature tends to cause some changes in the physicochemical properties of polyoxyethylene, such as, the oxidative degradation of polyoxyethylene, the decrease in the viscosity of the tablet core, which eventually result in the acceleration of the release of the controlled release tablet, and this will increase potentially dangerous factors to the treatment of patients. (iii) During high-speed tablet pressing, the punch die repeatedly rubs to generate heat, and when the temperature reaches about 50° C., phenomena such as sticking, rough appearance of tablet core, rolled edge in part of the tablet core would likely appear. Therefore, it usually requires a special cooling equipment to control the temperature of punch die. For the osmotic pump controlled release tablet, the rolled edge in part of the tablet core is likely to cause vulnerable point in the coating membrane in the said part, which may lead to the fracture of the coating membrane in the course of release. Consequently, it affects the release rate of the drug, and more seriously, a sudden release of the drug caused by the fracture of the coating membrane may directly contribute to the fluctuation of blood concentration, thus increase the potential risk and adverse reaction of the administration of the psychotic patients, which goes against the purpose for preparing osmotic pump controlled release tablet.
(3) The three-layered capsule shaped osmotic pump controlled release system releases paliperidone at a substantially ascending release rate, which results in a relatively large fluctuation range of blood concentration, and thus reduces the safety, effectiveness and compliance of the administration.
Therefore, there is a need to provide a paliperidone osmotic pump controlled release tablet, which has a simple preparation process, low cost excipients for tablet core and good thermal stability, and is capable of effectively control the release rate of the drug to keep the curve of blood concentration smooth and reduce its fluctuation, and thus improve safety, effectiveness and compliance of the administration.

Paliperidone double-layered osmotic pump controlled release tablet and preparation method thereof

Shanghai Institute of Materia Medica, Chinese Academy of Sciences


An on-board charger for an electric vehicle a silicon controlled rectifier circuit configured to receive an AC input voltage and output a first AC rectified voltage, a power factor correction circuit configured to receive the rectified AC voltage and output a DC voltage, a DC Link capacitor that receives DC voltage as a capacitor voltage; and a controller configured to operate in a first mode and a second mode depending on the DC voltage.

The topology used in some AC-DC converters, such as onboard chargers (OBCs) for electric or hybrid electric vehicle batteries, requires a large capacitor to act as an energy buffer to provide constant output power from AC. This capacitor is referred to as a DC-link or bulk capacitor.
During normal operation, the capacitor remains charged above the peak of AC voltage and is provided energy with the PFC converter. However, when the converter stops working for some time, long enough to discharge the DC link passively, its voltage will be far below the AC peak voltage. In that scenario, if the circuitry is activated normally, the current inrush from the AC grid to the DC link would damage the components, resulting in the converter not being able to operate due to the large voltage at the input and the large size of the discharged capacitor.
For this reason, a method is needed to make the DC link reach a voltage at least equal to AC input peak before the converter can work in normal operation. A commonly used method is to use a resistor in parallel with a relay from connected from AC to DC-link when pre-charge is needed, with resistor limiting the current inrush. To charge the bulk capacitor, the relay is open so the AC current is limited by the resistor. When the bulk is charged enough, the relay is closed and bypasses the resistor. This method has an added cost due to additional components and a larger printed circuit board being needed.
Accordingly, there is a need for improved OBC design with enhanced pre-charging features.

Voltage and PFC based OBC pre-charge system


A method of connecting a telephone call through one of a plurality of networks where one of the plurality of networks is an internet protocol network is provided. A first factor for an acceptable quality of service level is received from a user. A second factor responsive to the quality of service for the internet protocol network is determined. The telephone call is connected through the internet protocol network if the second factor is greater than the first factor, otherwise, the telephone call is connected through one of the plurality of networks other than the internet protocol network.

1. Field of the Invention
This invention relates to routing of telephone calls and, more particularly, to connecting of telephone calls over internet protocol networks.
2. Background Information
The traditional telephone network is a switched network that provides users with a dedicated end-to-end circuit for the duration of each call. Circuits are reserved between the originating switch, tandem switches (if any), and the terminating switch based on the called party number to create the end-to-end circuit.
Recently, telephone calls have been transmitted over digital networks using packet switched internet protocol (IP) networks, termed voice over IP (VoIP) transmission. Packet-switched IP networks provide shared, virtual circuit connections between users. Voice information to be transmitted across an IP network is converted into digital data and broken up into multiple, discrete packets. Individual packets may travel over different network paths to reach the final destination where the packets are reassembled in the proper sequence to reconstruct the original voice information. The transmission speed between any two users can change dramatically based on the dynamic number of users sharing the common transmission medium, their bandwidth requirements, the capacity of the transmission medium, and the efficiency of the network routing and design.
VoIP transmission typically costs less than transmission over traditional public switched telephone networks (PSTNs). A disadvantage of VoIP networks is the variability of the quality of the signal received at the destination as determined by changing network conditions. The received signal quality depends on a large number of variable network factors such as packet loss, packet latency, queuing delay, and bandwidth availability. These network factors will vary depending on the volume of network traffic and the location of the destination. The IP network, unlike the traditional public switched network, is not uniformly or predictably suitable for voice quality transmission.
Prior art systems that provide VoIP may monitor the quality of service (QoS) for voice transmissions and select alternate routing for calls when the QoS is determined to be unacceptable. However, QoS is a subjective determination. If the threshold level is too low, some users will have calls routed as VoIP when the QoS is unacceptable to the user. If the threshold level is too high, some users will have calls routed over more expensive lines when VoIP would be acceptable to the user.
The decision to route over IP or alternate routing is often a cost trade-off. The cost of alternate routing generally varies substantially depending on destination. Therefore, a QoS threshold that is suitable for a first destination may be too high for a second destination where the alternate routing is more expensive; the user may be willing to accept a lower QoS because of the higher cost of alternate routing. Similarly, the same QoS threshold could be too low where the alternate routing is less expensive.
The QoS requirement can vary depending on the type of call being transmitted. The QoS required for a teleconference is higher than that required for an automated voice response inquiry. In the case of the automated inquiry, the QoS requirement is different in each direction. The caller will transmit only control tones and a low QoS will be acceptable; the responder will transmit recorded voice and a higher QoS will be appropriate.
As pointed out above, QoS is affected by a large number of network factors. Typically, QoS thresholds are set as thresholds for one or more of the factors that affect quality. However, the factors interact in complex ways. A degradation in one factor can be offset by an enhancement of another factor. Setting thresholds for individual parameters to arrive at an appropriate QoS threshold is difficult. Further, setting thresholds for individual factors disregards the interaction between the factors. The QoS provided when all factors are above the threshold may also be available when one factor is below the threshold if other factors are sufficiently above the threshold.
The International Telecommunications Union (ITU) has issued recommendation G.107, The E-Model, A Computational Model for Use in Transmission Planing (Geneva 1998), that provides a transmission rating model, termed the E-model, for calculating a rating factor, R, based on a large number of terminal and network parameters which are known to impact the subjective perception of end to end voice quality. The recommendation also includes a guide for relating values of R to qualitative measures of voice quality transmission, including Mean Opinion Score (MOS). Higher values of R and MOS correspond to better voice quality and higher QoS. However, computation of R by the full E-model is complex and it is computationally wasteful to use it to compute R values for use in monitoring QoS in real-time.
Accordingly, what is required is a method and apparatus that permits the user to configure the QoS threshold for VoIP connection of calls. The method and apparatus should allow the threshold to be set based on the destination of the call being placed. Further, the method and apparatus should allow the threshold to be set based on an overall QoS desired rather than by setting thresholds for specific transmission parameters.

Method and apparatus for providing a configurable quality of service threshold for voice over internet protocol


Aluminum sulfate that is less colored is prepared by adjusting the concentration of hydrogen peroxide in sulfuric acid to 0.1% by weight or less, and contacting the sulfuric acid with an alumina-containing compound.

1. Field of the Invention
The present invention relates to a process for preparing aluminum sulfate that is less colored from high purity sulfuric acid that is used in the electronic industries. More particularly, the present invention relates to a process for preparing less colored aluminum sulfate from high purity sulfuric acid that is used in the electronic industries, while preventing corrosion of storage tanks and pipings used for sulfuric acid and apparatus used for the preparation of aluminum sulfate.
2. Description of the Related Art
Aluminum sulfate is used as a water-purifying agent for water-supply and factory water or effluent, as a paper-sizing agent or a mordant, in fire-extinguisher, in the production of aluminum compounds or tanning of white leather, as a clarifier of oil and fat, as a catalyst for various reactions, and the like.
In general, aluminum sulfate is prepared by charging sulfuric acid into a reactor made of a material resistant to heat and acids, adding aluminum hydroxide in a stoichiometric or slightly excess amount, heating and reacting them. When solid aluminum sulfate is to be obtained, a concentrated aluminum sulfate solution is poured in a solidification bed and cooled till the solidification is completed, and a mass is comminuted and packaged.
When aluminum sulfate is to be obtained in a liquid form, the concentrated aluminum sulfate solution is diluted in the reactor, poured into a storage tank and cooled.
Some applications of aluminum sulfate require whiteness and clearness. Therefore, the aluminum sulfate solution obtained from the reaction is purified using a filtration apparatus that is precoated with diatomaceous earth, or is contacted with activated carbon to remove coloring materials by adsorption (see, for example, Japanese Patent Kokai Publication No. 87985/1975). In the above process, the organic materials (e.g. humic acid, etc.,) which are included in aluminum hydroxide as the raw material, are removed by filtration and/or adsorption to achieve decoloration.
In recent years, with the quick progress in the electronic industries, and in particular, with the rise in demand for high level processing techniques due to the increase of an integration level in the semiconductor industry, a large amount of high purity sulfuric acid is used in a chemical processing step and a rinsing step.
High purity sulfuric acid is replaced with a new batch in a short cycle to prevent problems caused by contamination with impurities.
Studies have been conducted to use the sulfuric acid that is discharged in a large amount from the electronic industries as the raw material in the preparation of surface acoustic wave resonator. However, it has been found that, when specific waste sulfuric acid discharged from the electronic industries is used, aluminum sulfate is colored yellow, and the yellow color cannot be removed even by the treatment with activated carbon.


Subject matter disclosed herein relates to sealant for tire repairing and more particularly, relates to sealant composition for repairing tire punctures and a method of preparing the same.

Tire sealant had been used in tires for sealing punctured tire. There are two types of tire sealant that function under different occasions. The common one is usually injected to pneumatic tires after puncture is discovered. Normally, the sealant is injected to the tire through the valve stem by pressurized air. As sealant passes puncture holes, it blocks the holes and stops gas leakage. A sufficiently large volume of sealant is required. It is usually preformed as an emergency solution for tire puncture because the sealant degrades gradually.
Preventative sealant is another type of tire sealant. It is placed inside the tire before occasion of puncture and served as a precaution. When tire puncture occurs, the sealant, which keeps circulating inside the tire, passes and seals the puncture.
In either cases, it is unavoidable that a large amount of sealant is required resulting in an increase of vehicle loading and a reduction of capacity of vehicle. This is undesirable in current market which emphasizes environmental friendly and cost effective products. Therefore, sealant of high sealing performance with small volume is demanding.
Foam sealant capable in expansion in volume is an alternative. An example of this type of sealant is disclosed in U.S. Pat. No. US 2013/0072594 A1. It discloses a sealant formula comprised of reactive blowing agent. It demonstrates an expansion of sealant due to chemical reaction. Isocyanate group in one of the suggested blowing agents is toxic, and its median lethal dose (LD50) is 5,000 mg/kg. Another recommended blowing agent (carboxy groups and hydrogencarbonate salt) generates carbon dioxide during foaming. However, the tire sealant may be stored in car baggage compartment, which can be very hot, so this may induce thermal decomposition of hydrogencarbonate that releases CO2. This may result in the leakage of sealant or explosion of sealant container. Hence expansion of sealant shall not rely on chemical reaction. In addition, consumers may scare of a sealant comprising reactive chemical.


In an address management system, an interface ID can be handed over from one apparatus to another without losing the correspondence between the interface ID and a user. As a result, the interface ID can be used as a unique identifier for the user. Accordingly, an effective infrastructure for individualized services is achieved. The interface ID may be constant for one user even when an apparatus is replaced, and thus IPv6 communication can be used as a user-associated address in high availability services, such as telephone services. Furthermore, the interface ID can be returned and reused, and thus the interface ID can be efficiently used.

The present invention relates to an address management system, an interface ID setting processor, a communication terminal, an address management method, and a computer program. More specifically, the present invention relates to an address management system, an interface ID setting processor, a communication terminal, an address management method, and a computer program, in which an interface ID in the Internet Protocol version 6 (IPv6) can be smoothly received and transmitted between apparatuses.
In recent years, mobile personal computers and mobile phones have been widely used. Many users carry these compact communication terminals which have a communication function and information processing function, and communicate through a network by connecting to the network at remote locations away from their homes.
In the Internet, an internet protocol (IP) is used as a communication protocol. The IP which is most commonly used now is IPv4, and a 32-bit address (IP address) is used as the address of the sender and the destination. In the Internet communication, a global IP address, in which a 32-bit IP address is uniquely allocated to each sender and destination, is adopted and individual senders and destinations are identified based on the IP addresses. However, the Internet has been expanding rapidly and the limited address space of IPv4, that is, the exhaustion of global addresses has become a problem. In order to solve the problem, the Internet Engineering Task Force (IETF) has proposed a new Internet Protocol version 6 (IPv6) as a next-generation IP address, in which the IP address space is expanded from 32 bits to 128 bits.
The IPv6 is a successor protocol of the current IPv4 and has the address format shown in FIG. 1. The IPv6 has a 128-bit configuration. The lower bits correspond to an interface ID (for example, IEEE 802 format) as a node identifier for uniquely identifying nodes on the Internet or a subnetwork, and the upper bits correspond to a network prefix as a location indicator for indicating the subnetwork to which the node is connected. Accordingly, the terminals connected to the same subnetwork have basically the same network prefix of the upper bits in the IPv6 address.
In the IPv6, since packets are transmitted based on only a prefix and a subnet number, the lower bits of the address, that is, the interface ID, can be allotted by a terminal manufacturer. Properly speaking, a part of the interface ID number is a manufacturer's identifier and the remainder is left to the discretion of the manufacturer. In the IPv6, the interface ID is a part of the IPv6 address and can be freely decided by the manufacturer, which is different from the Ipv4. By making the interface ID correspond to a user ID, a sold terminal and customer information regarding that sale, can be coupled via the interface ID.
However, the correspondence between an interface ID and a customer varies. The variations result from changes in the customer's behavior, such as when the customer replaces a terminal. The resultant variation in the correspondence between the interface ID and the customer badly affects any applications which associate a user with an IP address. For example, in IP communications, correspondence data for indicating general names of an addressee and the IP address of an apparatus used by an actual addressee is stored as an address resolution mechanism. The service is provided based on the correspondence data.
However, when the correspondence between the interface ID and the user varies due to the replacement of the user's terminal by the user, the new terminal cannot be used for communication until the correspondence data is updated. The reason for this is as follows: packets are transmitted based on a prefix and a subnet number, but an IPv6-compliant apparatus determines whether or not the apparatus receives the packets by verifying the entire IPv6 address, including the interface ID, at the end of the transmission.
As described above, it is difficult to apply the IPv6 to applications requiring high availability such as mobile phones, when the correspondence between an interface ID and a customer is varied or is changed. Therefore, it is desirable to provide improved systems and methods for applying the Ipv6 when correspondence between interface ID's and customers vary or change.

Address management system, interface ID setting processor, communication terminal, address management method, and computer program


A device includes a semiconductor substrate, a plurality of micro-lenses disposed on the substrate, each micro-lens being configured to direct light radiation to a layer beneath the plurality of micro-lenses. The device further includes a transparent layer positioned between the plurality of micro-lenses and the substrate, the transparent layer comprising a structure that is configured to block light radiation that is traveling towards a region between adjacent micro-lenses, wherein the structure and the transparent material are coplanar at respective top surfaces and bottom surfaces thereof.

The present disclosure relates generally to image sensor devices and, more particularly, to an apparatus and method for reducing optical crosstalk in image sensor devices.
An image sensor provides a grid of pixels which may contain photosensitive diodes or photodiodes, reset transistors, source follower transistors, pinned layer photodiodes, and/or transfer transistors for recording intensity or brightness of light. The pixel responds to the light by accumulating photo-charges—the more light, the more the photo-charges. The charges can then be used by another circuit so that a color and brightness can be used for a suitable application, such as a digital camera. Common types of pixel grids include a charge-coupled device (CCD), a complimentary metal oxide semiconductor (CMOS) image sensor (CIS), an active-pixel sensor (APS), and a passive-pixel sensor.
In order to capture color information, image sensors may employ a color filter layer that incorporates several different color filters (e.g., red, green, and blue), and are positioned such that the incident light is directed through the filter via an array of micro-lens. However, the micro-lens may exhibit poor light control ability at a region between adjacent micro-lens. That is, incident light traveling through this region may not be directed to the appropriate pixel for processing. This may result in optical cross-talk between adjacent pixels and thus, may lead to poor device performance.
Therefore, what is needed is a simple and cost-effective apparatus and method for reducing optical cross-talk in image sensor devices.

This patent is subject to a terminal disclaimer.

Method for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.


In a method of fabricating thin film field effect transistor array by forming gate bus lines and drain bus lines in the form of a matrix on a light transmissive insulating film, forming thin film field effect transistors in the vicinity of each crossing point of the gate bus lines and the drain bus lines, and connecting pixel electrodes to each of the thin film field effect transistors, the method of fabricating the thin film field effect transistor array in accordance with the present invention includes the step of forming a gate electrode, the pixel electrode, and the drain bus line consisting of a transparent conductive film and a first metal film, or exclusively of the transparent conductive film, on the light transmissive insulating substrate, the step of forming a laminated film consisting of a gate insulating film, an amorphous silicon layer, and an n-type amorphous silicon layer, covering at least the gate electrodes, and the step of forming the gate bus lines, source electrodes, and drain electrodes consisting of a second metal film.

1. Field of the Invention
The present invention relates to a fabrication method for a thin film field effect transistor array, and more particularly to a fabrication method for a thin film field effect transistor array suitable for active matrix liquid crystal displays.
2. Description of the Related Art
Liquid crystal displays are drawing attention as flat panel displays for portable computers and wall type televisions. In particular, the active matrix system which utilizes arrayed thin film field effect transistors formed on a glass substrate as switches for the respective pixels is expected to be applicable to televisions because of its full color display capability, and is under active development. One of the important tasks for establishing the practicability of the active matrix liquid crystal display is the cost reduction which results from the simplification of the structure and the device fabrication process. In the inversed staggered structure in which the gate electrode of the thin film field effect transistor is formed closer to the glass substrate than the source and drain electrodes, there has been disclosed a fabrication method which makes use of three sheets of photo-mask (see for example, Japanese Patent Laid Open No. 62-286271) as the prior art.
FIG. 1(a) to FIG. 1(g) show the step diagrams for forming a thin film field effect transistor element array based on the prior art method in which FIG. 1(a), FIG. 1(c), and FIG. 1(e) are plan views as seen from the top, and FIG. 1(b), FIG. 1(d), FIG. 1(f), and FIG. 1(g) are sectional views taken along the lines A--A', B--B', C--C', and D--D' in FIG. 1(a), FIG. 1(c), and FIG. 1(e). Referring to FIGS. 1(a) and 1(b), first, an indium-tin-oxide (ITO) film and a first chromium film are deposited in this order. Then, chromium gate electrodes 2a, chromium pixel electrodes 6a, transparent gate electrodes 2b, and transparent pixel electrodes 6b are formed by a photolithography method using a first photo-mask pattern. Next, referring to FIGS. 1(c) and 1(d), an SiN.sub.x film 7, an a-Si:H (hydrogenated amorphous silicon) film 8, and an n.sup.+ -a-Si:H film 9 are sequentially laminated, and portions of the SiN.sub.x film 7, the a-Si:H film 8, and the n.sup.+ -a-Si:H film 9 are removed by a photolithography method using a second photo-mask pattern except for the laminated film in the proximity of regions where thin film field effect transistors and chromium drain bus lines are to be formed. Then referring to FIGS. 1(e), 1(f), and 1(g), after forming a second chromium film, chromium drain bus lines 5a, drain electrodes 4, and source electrodes 14 are formed by a photolithography method using a third photo-mask pattern by etching the second chromium film. Then, the chromium pixel electrodes 6a consisting of the first chromium film formed on the transparent pixel electrodes 6b are removed by further etching. Simultaneously, the chromium gate electrodes 2a consisting of the first chromium film formed on the transparent gate electrodes 2b are also removed except for the portion where the chromium gate electrodes 2a cross the thin film transistors 10 and the chromium drain bus lines 5a. Next, channel parts of the thin film field effect transistors 10 are formed by removing the n-type amorphous silicon in the portions between the drain electrodes 4 and the source electrodes 14 by means of etching of the n.sup.+ -a-Si:H film 9 using the same resist pattern as in the above. It should be noted in this case that the gate bus line 3 has a laminated structure of the first chromium and ITO films where this gate bus line 3 cross the thin film transistor 10 and the drain bus lines 5, while it is constructed exclusively of the ITO film in other portions.
Ordinarily, five to seven sheets of photo-mask patterns are required in forming an inverted staggered type thin film transistor array. In accordance with the aforementioned method, however, it is possible to form a thin film field effect transistor array using only three sheets of photo-mask patterns.
Nonetheless, the wiring length will have to be increased as the area of the display becomes large, and the wiring width will have to be decreased as the display becomes highly fine-sized. As a result, the wiring resistance will be increased, which will cause the voltage applied to the gate bus line and the drain bus line to generate propagation delays in conjunction with the wiring capacitance. The propagation delay causes the application of the voltage to each of the thin film transistors to be insufficient and the addressing of the signal voltage to each of the pixels to be insufficient, bringing about a deterioration in the display quality. Particularly, the gate bus line is arranged along the horizontal direction, which is larger than the vertical one so that the wiring length thereof is large and the wiring resistance becomes high. In addition, the wiring capacitances such as capacitance where the gate bus line crosses the drain bus line and channel capacitance of the thin film transistor become large, so that the influence of the propagation delay on the gate bus line is larger than on the drain bus line. In the case of the thin film field effect transistor array obtained in accordance with the prior method described above, the greater part of the gate bus line is formed of transparent conductive ITO film with resistivity which is tens to several hundred times as large as that of a metal so that the wiring resistance is higher with correspondingly higher influence on the propagation delay.

Fabrication method for thin film field effect transistor array suitable for liquid crystal display


A valve-regulated lead-acid battery of this invention includes: an electrode plate group; and an electrolyte impregnated into and retained by the electrode plate group. The electrode plate group includes: positive electrode plates that each include a positive electrode current collector comprising a Sn-containing lead alloy, and a positive electrode active material retained by the positive electrode current collector; negative electrode plates that each include a negative electrode current collector comprising a lead alloy, and a negative electrode active material retained by the negative electrode current collector; and separators. The Sn content in the positive electrode current collector is 1.1 to 3.0% by mass, and the pore volume per unit mass of the negative electrode active material is 0.115 to 0.150 cm3/g.

With the development of information equipment such as communications equipment, there has recently been a demand for lead-acid batteries having a high voltage and a high capacity as the batteries used in such equipment. At the same time, there has also been a demand to reduce the maintenance work of lead-acid batteries and, particularly, prolong their life.
To meet such demands, many proposals have conventionally been made on valve-regulated lead-acid batteries. Maintenance work reduction is made by causing an electrolyte to be substantially contained in the micropores of a positive electrode plate, a negative electrode plate and a mat separator made of glass fiber, and causing the negative electrode plate to absorb oxygen gas generated from the positive electrode plate in the last stage of charging. This can suppress the electrolysis of water, thereby preventing the loss of the electrolyte.
Meanwhile, in valve-regulated lead-acid batteries, a free electrolyte does not exist in some cases, or the amount of the electrolyte is limited to a minimum in other cases. Thus, when a battery is used, the battery can be placed in free orientations; for example, it may also be placed sideways for use. With respect to large-sized batteries, in particular, a plurality of batteries that are placed sideways with their terminals at the front may be electrically connected in series, to be used as a battery set.
As for the prolongation of battery life, the pressure exerted on the electrode plate group is usually heightened to press the positive electrode active material by the separator, thereby suppressing the expansion of the positive electrode active material and preventing the separation of the positive electrode active material. However, with an increase in battery size, it has become difficult to exert an adequate pressure on the electrode plate group and maintain such a state even when the material of the battery container is changed or the battery container walls are thickened for strengthening the battery container. Further, in recent years, long-life batteries with a lifespan of 10 years or more have been required.
In lead-acid batteries, the corrosion of their positive electrode current collector due to oxidation progresses as the period of use becomes longer. Consequently, the cross-sectional area of the positive electrode current collector is decreased, thereby impairing the conductivity of the whole positive electrode plate. This results in degradation in voltage characteristics during high rate discharge of the battery. If such corrosion of the positive electrode current collector proceeds further, this will ultimately lead to breaking of the positive electrode current collector itself. As a result, the battery capacity decreases rapidly, and the battery reaches the end of its life.
In valve-regulated lead-acid batteries, the oxygen gas generated from the positive electrode plate is absorbed by the negative electrode plate, as described above, so that the scattering and discharging of the oxygen gas to the outside of the battery is suppressed. However, if the amount of gas the negative electrode plate can absorb is smaller than the amount of the oxygen gas generated at the positive electrode plate, the oxygen gas inside the battery is discharged to the outside of the battery, resulting in a decrease in the electrolyte. In contrast, if the negative electrode plate has a sufficient oxygen-gas absorbing ability, the battery voltage lowers during charge and the charge current increases during constant voltage charge. This promotes the above-described corrosion of the positive electrode current collector, thereby shortening the battery life.
As a method for preventing such corrosion of the positive electrode current collector, it is known to use a Pb—Ca—Sn alloy for the positive electrode current collector and increase the Sn content in this alloy to make the alloy crystals finer. For example, Japanese Laid-Open Patent Publication No. Hei 11-40186 discloses that the Sn content in the alloy constituting the positive electrode current collector is set to 1.05 to 1.50% by mass, in order to suppress the corrosion of the positive electrode current collector which is remarkable when the ratio of the positive electrode active material amount to the negative electrode active material amount is set to a relatively small range of 0.69 to 0.75.
However, such adjustments in the ratio of the positive electrode active material amount to the negative electrode active material amount and the specific surface area of the negative electrode active material can suppress a thermal runaway due to increased trickle current and battery life shortening, but these techniques only are not sufficient in cases a long life of 10 years or more is required.
Further, when a plurality of such batteries are connected in series to form a battery set having a voltage high enough to back-up a commercial power source, if there are large variations in the gas-absorbing abilities of the negative electrodes of the batteries, the charge voltages of the batteries vary. In this case, some batteries of the battery set become insufficiently charged or overcharged, which become factors causing a rapid shortening of the life of the whole battery set.
In order to solve the above-mentioned problems, it is therefore an object of the present invention to provide a valve-regulated lead-acid battery that is particularly suitable for use as a back-up power source and that has a stable long life.

Abstract: By employing the above configuration, the negative electrode plate has a stable oxygen-absorbing ability, and the corrosion of the current collector of the positive electrode plate is suppressed, so that it is possible to obtain a valve-regulated lead-acid battery with a stable long life.


A method of operating a processor pool having a given maximal processing power, in handling mobile data connections. The method includes connecting a plurality of mobile data connections, which may require up to a total peak processing power which is substantially greater than the given maximal processing power of the processor pool, to the processor pool, and processing data transmitted on at least one of the connected data connections, by the processor pool.

Cellular ground networks are generally formed of a plurality of base transceiver stations (BTSs) which wirelessly contact mobile units serviced by the network. The BTSs are connected in a tree topology to a regional base station controller (BSC) which controls the routing of calls in the network. Usually, a single BSC is connected to tens or hundreds of BTSs. The BSC is generally connected to a mobile switching center (MSC) which in turn is connected to other BSCs and to one or more public telephone networks. When a call is established with a mobile unit, a channel is generally allocated between the mobile unit and the MSC through a BSC and one or more BTSs, to pass the signals of the call to and from the mobile unit.
Cellular networks can be used to transmit data packets, in addition to phone calls. A protocol for such data transmission is referred to as a general packet radio service (GPRS) and is described, for example, in an emerging ETSI draft standard for GSM, GSM 03.60 version 7.4.0 Release 1998, the disclosure of which is incorporated herein by reference. In accordance with the GPRS, the BSCs are connected to GPRS support nodes (GSNs) which pass the data packets to their destinations on IP networks. For example, the GSNs may serve as gateways to the Internet. In many cases the GSNs are located adjacent to or within respective MSCs.
Generally, mobile data connections are formed between mobile units requesting to transmit and/or receive data and the GSN. The connections pass partially through over a wireless link between a BTS and the mobile unit and partially on a link connecting the BTS to the GSN. The GSN generally includes an array of dedicated ASIC processors which each handles a single mobile data connection. The number of ASIC processors positioned in a GSN is limited by various physical constrains, such as the space required for the processors and their cost. For each active data connection, the GSN manages a serving GPRS support node (SGSN) which controls the connection and a gateway GPRS support node (GGSN) which serves as an interface between the mobile network and a packet based network, i.e., an IP network. The GGSN generally compresses the signals transmitted to the mobile unit, in order to conserve wireless bandwidth.
Some service providers use for the channel connecting the GSN to an IP network a link with a bandwidth lower than the total bandwidth of the connections from the GSN to the mobile units. This is possible because the connections between the GSN and the mobile units are not always fully utilized. The size of the link is chosen so that statistically, the chances of the bandwidth actually required by the mobile units is nearly never greater than the links bandwidth.

Method and apparatus for allocating processor pool resources for handling mobile data connections


A semiconductor device is disclosed. The semiconductor device includes: a substrate; a metal-oxide semiconductor (MOS) transistor disposed in the substrate; and a shallow trench isolation (STI) disposed in the substrate and around the MOS transistor, in which the STI comprises a stress material.

1. Field of the Invention
The invention relates to a semiconductor device, and more particularly, to a semiconductor device with stress-induced STI or contact plugs.
2. Description of the Prior Art
A conventional MOS transistor generally includes a semiconductor substrate, such as silicon, a source region, a drain region, a channel positioned between the source region and the drain region, and a gate located above the channel. The gate is composed of a gate dielectric layer, a gate conductive layer positioned on the gate dielectric layer, and a plurality of spacers positioned on the sidewalls of the gate conductive layer. Generally, for a given electric field across the channel of a MOS transistor, the amount of current that flows through the channel is directly proportional to a mobility of the carriers in the channel. Therefore, how to improve the carrier mobility so as to increase the speed performance of MOS transistors has become a major topic for study in the semiconductor field.
The formation of SiGe source/drain regions is commonly achieved by epitaxially growing a SiGe layer adjacent to the spacers within the semiconductor substrate after forming the spacer. In this type of MOS transistor, a biaxial tensile strain occurs in the epitaxial silicon layer due to the silicon germanium, which has a larger lattice constant than silicon, and, as a result, the band structure alters, and the carrier mobility increases. This enhances the speed performance of the MOS transistor.
In addition to the application of epitaxial layer, as the semiconductor processes advance, how to increase the driving current for metal oxide semiconductor (MOS) transistors for fabrication processes under 65 nanometer has become an important topic. According to this trend, the utilization of high stress films for increasing the driving current of MOS transistors has become increasingly popular. Currently, the utilization of high stress films to increase the driving current of MOS transistors is divided into two categories: one being a poly stressor formed before the formation of nickel silicides and the other being a contact etch stop layer (CESL) formed after the formation of the nickel silicides.
However, as current approach of either using epitaxial layer or stress films to increase the mobility of carrier in the channel regions of transistor has reached a bottleneck, how to further improve the performance of current device has become an important task.


A sensing method of an electrochemical sensor including the following steps is provided. First, a fluorescent material is immobilized on a surface of an electrode so as to form a sensing electrode. The sensing electrode is then used to execute an electrochemical test of a target in a light-shielding environment.

In recent years, the aging population increases. Hence, the medical sensing technology becomes more important for early discovery of any physical disorder or illness and a proper treatment thereof. The so-called biosensor refers to an analytical apparatus in which biomolecules (such as enzyme, antibody, etc.) react with a target (such as glucose, potassium ions, cholesterol, DNA, tumor markers, etc.) in a system, and the reaction result is converted to an electronic, optical, thermal, magnetic or wave signal. The major components of a biosensor include a biosensing material, a transducer and an electronic device. A biosensor employs a highly selective biosensing material to react with the target (analyte), transmits the reaction results in a form of an optical, electrical, thermal, magnetic, or wave signal via a transducer, and displays the results with the associated electronics or data processors. Typically, biosensors are divided into enzymatic sensors, immuno sensors, and chemical receptor sensors, etc., based upon the sensitive biological material used. For example, a specific enzyme is used to catalyze the reaction of the targeted analyte, and the corresponding response is properly transformed with a transducer and displayed on the reader device in the system of enzymatic sensor. The structure of a biosensor is more compact than conventional analytic instruments and is easily portable and is more friendly to use. Hence, patients or any users, whenever it is necessary, may use the simple detection method at home to monitor the instant status of a physical condition.
Most of commercially available biosensors employ electrochemical sensing mode for its simple operation, high sensitivity, and reasonable cost. Enzymatic sensor, in which oxidases and dehydrogenases are frequently employed, is one of the most commonly used electrochemical biosensors. Hydrogen peroxide (H2O2) and reduced β-nicotinamide adenine dinucleotide (NADH) are the common co-products of reactions catalyzed by oxidases and dehydrogenases respectively. Consequently, the levels of H2O2 and NADH are often measured to indicate the level of analytes. Therefore, sensors with high sensitivity to H2O2 or NADH imply a great opportunity for biosensors with oxidases or dehydrogenases, respectively.

Sensing method of electrochemical sensor


Methods, systems, and apparatus, including computer programs encoded on computer storage media, for order routing. One of the methods includes receiving a request for quote from a user, the request for quote indicating that the first user is to be anonymous during the negotiation. The method also includes selecting counterparties to receive the request for quote. The method also includes sending the request for quote to the selected counterparties absent revealing the identity of the user. The method also includes receiving prices from the counterparties, each price associated with a counterparty. The method also includes presenting the prices to the user.

This specification relates to swaps.
Swaps are financial derivatives in which counterparties to the transactions exchange certain benefits of one party's financial instrument for those of the other party's financial instrument. Two examples of financial swaps are Interest Rate Swaps and Credit Default Swaps. Interest rate swaps are a financial derivative in which one party agrees to pay a fixed interest rate on a notional amount to a second party in exchange for receiving a floating interest rate on a notional amount. Interest rate swaps can be denoted in a single currency or multiple currencies. Credit Default Swaps are a financial derivatives in which one party, who is the buyer of credit protection, makes a series of payments to other party, who is the seller of credit protection, regarding an underlying bond or loan, in exchange for the seller's agreement to make payment on the underlying bond or loan if there is a credit event that causes it to go into default.
Securities can be traded on electronic exchanges. Securities traded over exchanges are standardized to allow for transparent trading. Less standard derivatives are traded in an over-the-counter (OTC) derivatives market. OTC derivatives are currently traded bilaterally between two parties.


A composition of matter and an interlayer formed of such composition for a laminated glazing comprising polyvinyl butyral resin plasticized with a mixed adipate or a mixture of pure and mixed adipates made from: (a) at least one C.sub.4 to C.sub.9, preferably C.sub.6, alkyl alcohol and (b) at least one cyclo (C.sub.4 to C.sub.10), preferably C.sub.6, alcohol wherein the proportions of (a) and (b) in parts by weight per 100 parts of (a) and (b) are: (a) 10-90, preferably 30-80 and (b) 90-10, preferably 70-20.

This invention relates to compositions and interlayers for laminated glazings and more particularly to plasticized polyvinyl butyral resin forming such interlayers.
Polyvinyl butyral (PVB) resin as sheet for use as optically transparent, impact-dissipating interlayer in multilayered laminated safety glazings is well known. Since the glass transition temperature of unplasticized PVB resin is too high for it to be a useful elastomer for impact dissipation in these applications, it is also known to reduce such temperature to a useful range by incorporating a plasticizer in such resin.
In choosing a plasticizer for PVB resin for such applications, it is further known to balance the impact-dissipating and edge stability capabilities of a glazing interlayer by using a mixture where each component of the mixture is better than the other in promoting one of these properties. Representative mixtures and their optimization are disclosed in U.S. Pat. Nos. 4,243,572 and 4,371,586 where aryl adipates in a mixture provide edge stability to the interlayer. Light stability of laminates using plasticized PVB resin, however, is also required for the intended architectural and motor-vehicle window applications involving prolonged exposure to sunlight. Optimizing shock absorbing, edge-delamination-resistant and UV stability properties in an interlayer through choice of an appropriate plasticizer has, to the best of present knowledge, not been accomplished in the prior art.

Plasticized polyvinyl butyral and interlayer thereof


A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.

In prior production methods, the wafer cleaning of the slurry residues after the wire-sawing and the wafer texturing are completed in two different process chains. Both processes are implemented operationally by wafer producers and solar cell producers. Slurry wafer cleaning is effected immediately after the wire-sawing by the wafer producers. It essentially comprises removing contamination applied on the wafer surface by the wire-sawing. There is included therein above all the abrasion of silicon and also of the components of the wire and the grinding agent and adhesive used (slurry). The cleaned wafers, after leaving the cleaning unit, have a more or less intensive crystalline damage to the surface which must be removed in a further process step.
The texturing of the wafer surface, if it has been implemented at all, falls within the remit of solar cell producers. Preceding this, during production of highly efficient solar cells, is a complex three-part subsequent cleaning step which follows the wafer subsequent cleaning in the chip industry. This RCA cleaning (D. C. Burkman, D. Deal, D. C. Grant, C. A. Peterson: "Aqueous Cleaning Processes in Handbook of Semiconductor Wafer Cleaning Technology, Science", Technology and Applications, East Windsor, N.J., USA (1993) pp. 111-129) comprises:    1.) Oxide etching with HF/HNO3;    2.) SC-1 cleaning with H2O/NH4OH/H2O2 with subsequent HF dip;    3.) SC-2 cleaning with (H2O/HCl/H2O2) which removes the contamination and residual metallic and organic contaminants, which are applied on the wafer surface by the transport, after the pre-cleaning by the wafer producers (Figure 1a).
After each chemical treatment, the wafers pass through another rinsing step with highly pure, deionised water before moving to the next etching solution. In this way, a total number of tanks of approx. 8 is the rule solely for the RCA cleaning (O. Doll: "Komplexbildner für alkalische Reinigungslösungen von Halbleitersilicium-Oberflächen: Aspekte ihrer Wirksamkeit and ihrer chemischen Stabilität", (Complex formers for alkaline cleaning solutions of semiconductor silicon surfaces: aspects of their efficacy and their chemical stability), PhD Thesis, Frankfurt/Main (2005)) with small deviations by the various producers.
In the case of commercial solar cells, the wafers cleaned by the wafer producers of the slurry move directly into the texturing process which, in the case of basic texturing according to the prior state of production of commercial solar cells, is implemented on an industrial scale in a batch unit and serves simultaneously also as damage etch. However, it is also possible that the damage etch is implemented as a separate process step before the texturing. After applying the texturing, the wafers are subjected to an HCl and HF dip for respectively up to one minute before the emitter diffusion is implemented (Figure 1b). The HCl dip is intended to neutralise the residues of KOH solution remaining on the wafer surfaces and to stop their further chemical attack on the wafer surface. Likewise, the metallic impurities deposited by the alkaline etching solution in addition on the silicon surface, above all the poorly soluble hydroxides, precipitated from the basic solution, of the trivalent metal ions Fe3+ and Al3+, are intended to be brought again into solution. The HF dip is intended to ensure removal of the native oxide present on the wafers after the texturing step.
The wafer cleaning has been performed to date by two method routes: either in a batch or in an inline process, respectively two units, one for the slurry cleaning and one for the texturing, being used. To date a batch process has been the industrial standard for wafer texturing. Also different chemical systems are thereby used for cleaning and texturing: only weakly basic agents (pH 8-9) which contain cleaning surfactants for the cleaning, and strongly basic agents (pH>13) which contain texture surfactants for the texturing. Cleaning surfactants and texturing surfactants are not identical in the case of previous solar cell processing. In both cases, the pH of the agents is regulated via the addition of alkali hydroxides (generally NaOH in the cleaning and KOH in the texturing).
In the case of the batch cleaning process, the contaminated wafers pass through chemical tanks of a different composition in defined portions. Generally, aqueous alkaline agents based on potassium- or sodium hydroxide with different surfactant additives serve as cleaning agents. Chemical and ultrapure water cascades make use of the dilution effect as an essentially physical principle during cleaning, which dilution effect results when the wafers move through a large number of tanks. The process time for a batch, comprising all those partial steps from wafer separation after the wire-sawing up to the finished cleaned wafer, is generally more than one hour here.
Inline cleaning ensures a tighter temporal course in which the wafers are conveyed over a roller system in the manner of a conveyor belt, said wafers being subjected in the various portions of the cleaning bank, which are not delimited from each other strictly, to variable chemical and physical conditions. Inline cleaning, unlike batch cleaning, is a continuous process. It enables continuous exchange of the cleaning agents in parallel for cleaning without interruption of the process and improved agent control. From a chemical point of view, similar cleaning agents are used here as in batch cleaning.
For texturing of the surface of monocrystalline silicon wafers, generally an alkaline agent comprising potassium hydroxide and 2-propanol is used in the case of solar cell production. In order to ensure sufficient etching removal for removing the sawing damage, etching times in the range between 15 and 25 minutes are normal, for which reason production plants are used exclusively in the batch process. In the case of texturing, the anisotropy of alkaline etching agents is used in the etching behaviour of different crystal directions in the silicon in order to produce so-called "randomly distributed pyramids", "random pyramids". As further alkaline etching agents in addition to KOH, furthermore sodium hydroxide, tetramethylammoniumhydroxide and ethylenediaminepyrocatechol are mentioned, the organic etching agents mentioned here differing above all from both inorganic ones in a longer processing time, however the trade-off is they have no metallic cations. Potassium hydroxide is preferred relative to sodium hydroxide in the case of the inorganic etching agents, because the sodium ions remaining on the surface after the texturing can act, because of their higher diffusion rate relative to the larger potassium ions, as mobile charge carriers in the surface oxide of the silicon wafers. This has a negative effect on the electrical properties of above all oxide-passivated silicon substrates.

Texturing and cleaning agent for the surface treatment of wafers and use thereof

Fraunhofer-Gesellschaft zur Föerderung der angewandten Forschung E.V.


Method and apparatus for parallel testing of multiple regions on a substrate used in high performance combinatorial development of new materials and processes are described. The apparatus comprises dedicated hardware for each probe assembly with multiple PC controllers networked using a master/slave configuration.

The manufacture of integrated circuits (IC), semiconductor devices, flat panel displays, optoelectronics devices, data storage devices, magneto-electronic devices, magneto-optic devices, packaged devices, and the like entails the integration and sequencing of many unit processing steps. As an example, IC manufacturing typically includes a series of processing steps such as cleaning, surface preparation, deposition, lithography, patterning, etching, planarization, implantation, thermal annealing, and other related unit processing steps. The precise sequencing and integration of the unit processing steps enables the formation of functional devices meeting desired performance metrics such as speed, power consumption, and reliability.
As part of the discovery, optimization and qualification of each unit process, it is desirable to be able to i) test different materials, ii) test different processing conditions within each unit process module, iii) test different sequencing and integration of processing modules within an integrated processing tool, iv) test different sequencing of processing tools in executing different process sequence integration flows, and combinations thereof in the manufacture of devices such as integrated circuits. In particular, there is a need to be able to test i) more than one material, ii) more than one processing condition, iii) more than one sequence of processing conditions, iv) more than one process sequence integration flow, and combinations thereof, collectively known as "combinatorial process sequence integration", on a single monolithic substrate without the need of consuming the equivalent number of monolithic substrates per material(s), processing condition(s), sequence(s) of processing conditions, sequence(s) of processes, and combinations thereof. This can greatly improve both the speed and reduce the costs associated with the discovery, implementation, optimization, and qualification of material(s), process(es), and process integration sequence(s) required for manufacturing.
Systems and methods for High Productivity Combinatorial (HPC) processing are described in U.S. Pat. No. 7,544,574 filed on Feb. 10, 2006, U.S. Pat. No. 7,824,935 filed on Jul. 2, 2008, U.S. Pat. No. 7,871,928 filed on May 4, 2009, and U.S. Pat. No. 7,902,063 filed on Feb. 10, 2006 which are all herein incorporated by reference.
Typically, during the screening of new materials and processes using HPC methods, each of the regions within the substrate must be tested and the results used to select candidate materials or candidate process conditions for the next level of screening or development. In an R&D environment, the testing, analysis, and evaluation phase can become a bottleneck slowing the rate of discovery and innovation due to long testing times and serial testing protocols. This can lead to the inefficient use of resources, increased costs, and long development times.
Therefore, there is a need to develop systems and methods for increasing the throughput of testing, analysis, and evaluation activities in an R&D environment when using HPC techniques.

Method and apparatus for parallel testing of semiconductor devices