When an input indicating a position on a screen has been provided by a pointing device, coordinate values indicating the position are set as coordinate values of a starting point position. Subsequently, it is determined whether or not a state where the position on the screen is being continuously indicated by the pointing device has changed to a non-indicative state where the position on the screen is not indicated by the pointing device. As a result, when the state has changed to the non-indicative state, the coordinate values output from the pointing device before the change to the non-indicative state are set as coordinate values of an end point position, and a direction from the starting point position to the end point position is specified. Then, a virtual object is caused to move such that a moving direction of the virtual object is a direction different from the specified direction.

1. Field of the Invention
The present invention relates to input processing using a pointing device, and in particular, relates to input processing using a pointing device for causing a virtual object to move.
2. Description of the Background Art
Conventionally, an apparatus is known that operates an object displayed on a screen, using a pointing device such as a touch panel. For example, in "Touch Pen Mini Games", "Bob-omb Slingshot" under "Wario Chapter: see details" [online], May 2011, Nintendo Co., Ltd., the Internet <URL: http://www.nintendo.co.jp/ds/asmj/minigame/index.html> (hereinafter "Non-Patent Literature 1"), an operation method is disclosed of touching a slingshot ball displayed on a screen with a touch pen or the like, and sliding the touch pen in the direction opposite to the direction in which to launch the slingshot ball, whereby it is possible to launch the slingshot ball.
In the game of Non-Patent Literature 1 described above, a slide operation is performed by directly touching the slingshot ball displayed on the screen. Thus, the position where the slide operation is started is defined in a fixed manner.

Computer-readable storage medium having stored thereon input processing program, input processing apparatus, input processing method, and input processing system


Compositions and methods for detecting, inhibiting, treating, and/or preventing a liver disease or disorder such as cholestasis or fibrotic liver disease are provided.

Several publications and patent documents are cited throughout the specification in order to describe the state of the art to which this invention pertains. Each of these citations is incorporated herein by reference as though set forth in full.
Cholestasis is the state of impaired synthesis or excretion of bile, and it is the final common endpoint of a wide variety of infectious, inflammatory, genetic, toxic, and vascular diseases of the liver. The accumulation of bile components, particularly bile acids, is toxic to the liver, and chronic cholestasis leads to progressive fibrosis, cirrhosis, liver failure, and death if untreated (Kosters et al. (2008) Xenobiotica 38:1043-71). Cholestasis is caused by a variety of infectious, obstructive, metabolic and developmental liver disorders. Advances in the understanding of the hepatic response to cholestasis may therefore have an impact on a large population of adults and children with liver disease.
Cholestasis exposes hepatocytes and cholangiocytes to elevated levels of toxins normally excreted into the small intestine, including bile acids, heavy metals, and xenobiotics. Not surprisingly, the cycle of bile acid synthesis, canalicular excretion, intestinal absorption, and import into hepatocytes is regulated by feedback mechanisms (Wagner et al. (2010) Seminars Liver Dis., 30:160-77). Most of these are based on the ability of nuclear receptor transcription factors (NRs) to detect intracellular concentrations of bile acids and other bile components. In hepatocytes, NRs repress the expression of bile acid importers and synthetic enzymes, while activating export genes. NRs primarily involved in other metabolic pathways can also influence biliary function; for example, the lipid sensor PPARγ regulates CYP7A1, the rate-limiting enzyme in bile acid synthesis, as well as the phospholipid transporter MDR3 (Mdr2 in mouse) (Marrapodi et al. (2000) J. Lipid Res., 41:514-20; Kok et al. (2003) Biochem. J., 369:539-47). Nevertheless, these homeostatic pathways are not able to protect the liver in the setting of many cholestatic diseases. As a result, cholestatic damage progresses to biliary cirrhosis and liver failure. Progress in treating patients with cholestatic disease requires a greater understanding of the molecular pathways regulating bile flow and the cellular response to chronically elevated bile acids.

Compositions and methods for treating liver injury


A signal transformation apparatus, a signal transformation method, and a recording medium are provided. The signal transformation apparatus selects any one of DCT-II, DST-II, DFT, and HWT, and transforms and outputs the input signal according to the selected transform. Therefore, the hybrid architecture of low complexity can be attained.

Digital video technology goes through a hybrid fusion revolution over the last decade. Digital videos are applied to many fields such as DVD player, computer, and mobile handset. Nowadays, High Efficiency Video Coding (HEVC) is under development in combination with ISO/IEC Moving Picture Experts Group (MPEG) and ITU-T Video Coding Experts Group (VCEG). The MPEG and the VCEG create Joint Collaborative Team on Video Coding (JCT-VC) for HEVC standardization.
Recently, it is possible to easily catch news on the web using a smart TV or an iPhone. Video compression is essential to all of these applications. Discrete Cosine Transform (DCT)-II is a popular compression structure and accepted as the best suboptimal transformation exhibiting the performance quite close to the optimal Karhunen-Loeve transform for MPEG 4 and H.264 standard. Discrete orthogonal transform is used for applications of signal classification and representation. Discrete signal processing of Discrete Fourier Transform (DFT) is a popular transformation for Orthogonal Frequency Division Multiplexing 4th Generation (OFDM-4G) and communication. The OFDM is a key technology for next-generation mobile communication (3GPP-LTE, mobile WiMAX, IMT-Advanced) as well as wireless LAN (IEEE 802.11a, IEEE 802.11n), wireless PAN (multiband OFDM), and DFT-based broadcasting (DAB, DVB, DMB). Further, discrete wavelet transform based on Haar Wavelet Transform (HWT) is very useful in JPEG 2000 standard and signal analysis. What is needed is a method for applying the four transforms more easily.

Signal transformation apparatus applied hybrid architecture, signal transformation method, and recording medium

Industrial Cooperation Foundation Chonbuk National University


There is provided an information processing device including an image acquisition unit that acquires a captured image of a real space from an image capture device, a setting unit that sets, in association with the real space, an augmented reality space that virtually augments the real space depicted in the captured image, the augmented reality space differing according to related information that relates to the captured image, and a control unit that causes an image of a virtual object placed for each user within the augmented reality space to be displayed on a screen.

In the past, a variety of virtual reality (VR) technologies that present an artificially constructed virtual space to a user have been practically implemented. For example, Patent Literature 1 proposes a technology for achieving phigh operability when a user operates an avatar existing in a virtual space. In contrast, augmented reality (AR) technology, which has become the focus of recent attention, presents to a user an augmented reality space (AR space) by partially modifying a real space. With typical AR technology, a virtually generated object (virtual object) is superimposed onto an image from an image capture device pointed at a real space, providing a user experience as though that object exists in the real space depicted in the image.

Information processing device, client device, information processing method, and program


A vehicle battery cooling system includes a battery temperature sensor, a vehicle cabin temperature sensor, a discharge path via which a vehicle cabin, a battery chamber, and outside of a vehicle communicate with each other, a circulation path that circulates air between the vehicle cabin and the battery chamber, a switching unit that switches between the discharge path and the circulation path, and a controller. When a pressurization condition is satisfied, the controller operates the switching unit to select one of the discharge path and the circulation path based on measurement results of the battery temperature sensor and the vehicle cabin temperature sensor. The pressurization condition includes a condition that an air pressure in the vehicle cabin is higher than atmospheric pressure. When temperature of a battery is in a low cooling range and is higher than temperature in the vehicle cabin, the controller selects the discharge path.

The disclosure relates to a vehicle battery cooling system, and in particular, to a vehicle battery cooling system for cooling a battery mounted as a drive source on a vehicle, such as an electric vehicle.
A battery is mounted as a drive source on a vehicle, such as an electric vehicle or a hybrid vehicle. The battery tends to deteriorate in performance and have a reduced service life when the temperature of the battery excessively increases. In view of this, a cooling system for cooling the battery is publicly known. The cooling system introduces air in a vehicle cabin, which is air-conditioned by an air conditioner, to a battery chamber by using a cooling fan to thereby cool the battery.
For example, Japanese Unexamined Patent Application Publication (JP-A) No. 10-306722 discloses a vehicle battery cooling system including a battery as a drive source, a battery temperature sensor, a cooling fan, an air conditioner, a discharge duct, and a circulation duct. The battery temperature sensor measures temperature of the battery. The cooling fan introduces air in a vehicle cabin to a battery chamber that contains the battery. The air conditioner conditions air in the vehicle cabin. The battery chamber and the outside of the vehicle communicate with each other via the discharge duct. The circulation duct circulates air that has passed through the battery chamber such that the air returns to the vehicle cabin.
This cooling system is provided with a switch damper among the battery chamber, the discharge duct, and the circulation duct. The switch damper adjusts an open and close state of each duct. The switch damper is operated to select from among a circulation mode, a discharge mode, and a circulation and discharge mode. The circulation mode is performed to close the discharge duct and circulate air through the circulation duct. The discharge mode is performed to close the circulation duct and discharge air through the discharge duct to the outside of the vehicle. The circulation and discharge mode is performed to adjust an opening degree of each duct and circulate and discharge air by a predetermined ratio. The cooling fan is switched among a high level at which the air blow volume is high, a low level at which the air blow volume is low, and an OFF state, on the basis of temperature of the battery measured by the battery temperature sensor.
This vehicle battery cooling system selects the circulation mode when the cooling fan is in the OFF state. This prevents decrease in efficiency of the air conditioner due to discharge of air in the vehicle cabin to the outside of the vehicle. In the case in which the cooling fan is in the low level, when the air conditioner is in an external air introducing mode, the discharge mode is performed to improve the external air introducing effect of the air conditioner. Otherwise, when the air conditioner is not in the external air introducing mode, the circulation mode is performed to prevent increase in load on the air conditioner due to decrease in the internal pressure of the vehicle cabin, that is, to prevent increase in load on the air conditioner due to entering of external air into the vehicle cabin in response to decrease in the internal pressure. In the case in which the cooling fan is in the high level, the circulation and discharge mode is performed to prevent increase in load on the air conditioner due to decrease in the internal pressure of the vehicle cabin and also to prevent decrease in the air blow volume of the cooling fan.
The vehicle battery cooling system having such a cooling fan cools the battery by use of the air in the vehicle cabin. On the other hand, during driving of the cooling fan, the driving sound is perceived as noise by an occupant, and comfort is reduced.
As a technique of decreasing noise resulted from the cooling fan, JP-A No. 2004-48981 discloses a technique of adjusting a rotational speed of a cooling fan depending on level of noise in a vehicle cabin. A vehicle battery cooling system of this technique controls the operation state of the cooling fan. For example, the rotational speed of the cooling fan is increased, when the vehicle speed is increased, thereby causing large travel noise in the vehicle cabin. In contrast, the rotational speed of the cooling fan is decreased, when the vehicle speed is decreased, thereby causing small travel noise.


The present invention involves coatings deposited on a substrate including a layer having a selected resistivity. The resistive layer can serve as a heat source in a variety of applications and can be fabricated using an arc plasma spraying procedure.

Arc plasma spraying is a method for depositing materials on various substrates. A DC electric arc creates an ionized gas (a plasma) which is used to literally spray molten powdered materials in a manner similar to spraying paint. It was first developed by the aerospace industry where a need existed for different high performance coatings that afforded better thermal protection, electrical insulation and mechanical wear resistance. The technology has since found many applications in other industries because the coatings are typically of high density, good adhesion, and relatively low cost. One of the major advantages of the method is that it is amenable to volume manufacturing. For example, plasma sprays have been used to manufacture millions of alternator parts per year with aluminum oxide.
Plasma spray is part of a larger class of technology called, thermal spray, which includes combustion and electronic arc methods for depositing metal and ceramic coatings.
A thermal sprayed coating has a unique microstructure. During the deposition process, each particle enters a gas stream, melts, and cools to the solid form independent of other particles. When molten particles impact the substrate being coated, they impact (xe2x80x9csplatxe2x80x9d) as flattened circular platelets and freeze at high cooling rates. The coating is built up on the substrate by traversing the gun apparatus repeatedly over the substrate building up layer by layer until the desired thickness of coating has been achieved. Because the particles solidify as splats, the resultant microstructure is very lamellar with the grains approximating circular platelets randomly stacked above the plane of the substrate.
A continuing need exists for improvements, however, for improved materials in many fields using thermal spraying.
The present invention relates to the fabrication and use of resistive heaters with a controlled resistance such that when a voltage is applied to the material, heat is generated.
A heater of this invention includes a substrate and a resistive heating layer coated on the substrate. The resistive heating layer includes an electrically-insulating composition mixed with an electrically-conducting composition and a third composition. The electrically-insulating composition has a higher electrical resistance than the electrically-conducting composition.
In a preferred embodiment, the resistive heating layer has the distinctive microstructure of a thermal-sprayed coating and is electrically coupled to a voltage source. In a further preferred embodiment, the third material includes additive that enhances a material property of the resistive heating layer. In another preferred embodiment, the substrate, the electrically-insulating composition and the electrically-conducting composition are ceramic. In yet another preferred embodiment, the third material includes a conductive material or a thermal conductor. In other preferred embodiments, the heater includes a nozzle or a tubular body that heats material within the body.
In a method of this invention, an electrically-conducting composition is mixed with an electrically-insulating composition and a third material to form a mixture. The mixture is then thermal sprayed onto a substrate, and a heater is formed with the sprayed mixture.
In a preferred embodiment of this method, a bonding layer is formed between the substrate and the heater. In another preferred embodiment the substrate is removed from the thermal sprayed mixture. In yet another preferred embodiment, the third material includes a second electrical insulating layer. Still another preferred embodiment includes the formation of a heat reflecting layer. In a further preferred embodiment, a rapid thermal heater for a semiconductor processing system is formed. Additionally, a resistive heating layer is preferably formed that includes silicon carbide, molybdenum disilicide, lanthanum chromate, zirconium diboride or titanium diboride. In the thermal spraying step, a plurality of layers are preferably sprayed.
Another embodiment of this invention is a plasma-sprayed resistive heater including a resistive heating layer including a first electrically-insulating material mixed with a second electrically-conducting material which has a lower electrical resistance than the electrically-insulating material and further mixed with a third material. A voltage source is electrically coupled to the resistive heating layer. Preferably, the electrically-insulating material and the electrically conducting material are both ceramic.
Advantages of embodiments of this invention that have a resistive heating layer include the capability of quickly cycling between processing temperatures due to the extremely low mass of the resistive heating layer. Further, the design of the heater module affords extensive flexibility in heater configuration allowing the heater to be easily designed to include multiple zones of the resistive heating layer that can be independently powered to compensate for unequal heat losses between the center and edge of an article to be heated. Enhanced control over the composition of the resistive heating layer, in accordance with this invention, further provides greater latitude in heater design and greater control over the amount of heat generated.


Methods, apparatus, systems and articles of manufacture are disclosed that provide an apparatus to analyze vehicle perspectives, the apparatus comprising a profile generator to generate a first profile of an environment based on a profile template and first data generated by a first vehicle; a data analyzer to: determine a difference between the first profile and a second profile obtained from a first one of one or more nodes in the environment; and in response to a trigger event, update the first profile based on the difference; and a vehicle control system to: in response to the trigger event, update a first perspective of the environment based on one or more of second data from the first one of the one or more nodes or the updated first profile; update a path plan for the first vehicle based on the updated first perspective; and execute the updated path plan.

In recent years, autonomous vehicles have become popular in the automotive industry. Autonomous vehicles, such as autonomous automotive vehicles, can be used to streamline transportation of people and goods to desired locations. Autonomous automotive vehicles include sensors (e.g., a Global Positioning System (GPS) sensor, a global timer sensor, a Light Detection and Ranging (LIDAR) sensor, cameras, radar sensor, etc.) that generate data on the environment in which the vehicles are operating. Autonomous automotive vehicles include on-board systems that process the data generated by the sensors and generate a perspectives of the environments in which the vehicles are operating. The perspectives of the environments assist the autonomous automotive vehicles in navigating the environments.
The figures are not to scale. In general, the same reference numbers will be used throughout the drawing(s) and accompanying written description to refer to the same or like parts.

Methods and apparatus to update autonomous vehicle perspectives


A mechanism for attaching an outer covering to a molded shell-type vehicle sun visor having a pair of shell halves and an aperture in one shell half. The mechanism includes a stackes attached to or integral with an inner surface of the shell half and a bezel which cooperates with the stakes to sandwich the free edge portions of the covering along an inner surface of a shell half around the aperture to prevent the covering from working loose.

Many visors employed in automobiles are made of a molded, shell-type core covered by a fabric which is colored and textured to match the interior upholstery of the vehicle. Many such visors contain a vanity mirror housed within an aperture in the molded shell. Various methods have been utilized to secure the covering to the aperture.
For example, U.S. Pat. No. 4,411,467 to Cziptschirsch et al discloses a visor body having a recess for holding a mirror. The section of the covering layer overlapping the recess is more expandable than the remainder of the covering layer. To make this section more expandable, it is punched with holes defining a lattice of the material, and various shaped holes are disclosed. In this configuration, the covering does not have a peripheral free end portion located within the aperture and between shell halves.
U.S. Pat. No. 4,685,723 to Canadas discloses a mirror disposed in a detachable support which is capable of being fixed in the cavity of a visor by clipping the support into corresponding openings provided in a middle insert placed on the bottom of the cavity and covered with a sheet of PVC. In this configuration, the metal support insert is placed in the bottom of the cavity and covered with a film of foam, and then with the whole of the shell it is covered with the covering of PVC. Thereafter, the elastic tabs at the support of the mirror can be clipped through the thickness of the plastics covering of the shield.
U.S. Pat. No. 4,922,391 to Dykstra discloses a vanity mirror package which is lockably retained within a visor body having a recess. In this configuration, the vanity mirror package is snap-fitted and held within the recess by means of a pair of facing spaced resilient arms which extend rearwardly from the front core half and include inwardly projecting locking tabs on their ends cooperating with backing tabs to hold the vanity mirror package in place. In such a configuration, the free end portions of the covering around the aperture are not secured by being sandwiched by a cooperation between a retaining means and a fastening means to the inner surface of the shell half.
U.S. Pat. No. 4,494,789 to Flowerday discloses a visor having a snap-in frame which engages its side walls compressing the upholstered fabric against the wall of the visor. In this configuration, the free end portions of the covering extend through apertures in two shell halves and are compressed against the boundary wall of the aperture by means of a spring wire frame.
The present invention incorporates all of the known benefits of an inner plastic shell while improving the fabric attachment mechanism around an aperture.

Apparatus for securing fabric to a visor


A high voltage device includes a high voltage transistor and a protection device. The high voltage transistor has a first end and a second end, in which the first end is coupled to a voltage input/output terminal. The protection device is coupled between the second end of the high voltage transistor and a ground terminal, and has a parasitical equivalent circuit. When the voltage input/output terminal is charged based on positive ESD charges, the current corresponding to the positive ESD charges flows from the voltage input/output terminal through the high voltage transistor and the equivalent circuit in the protection device toward the ground terminal. A power management circuit is also disclosed herein.

1. Technical Field
The present disclosure relates to an electronic device. More particularly, the present disclosure relates to an electrostatic discharge (ESD) protection circuit.
2. Description of Related Art
Conventionally, there is an electrostatic discharge (ESD) protection mechanism set in every kind of electronic apparatus, so as to prevent the electronic apparatus from being damaged due to a momentary large current when a human body carrying too many electrostatic discharge charges touches the electronic apparatus, or to prevent the electronic apparatus from being affected by electrostatic discharge charges existing in the environment or carried by transportation and thus abnormally operating.
For the electronic apparatus operated with a high voltage condition, a high voltage device usually can be applied therein so as to provide capability of processing high voltages. Under the condition that the electronic apparatus is not operated, the high voltage device itself also can sustain the ESD current without being damaged.
However, the high voltage device mentioned above cannot provide effective ESD protection. Thus, when the electrostatic discharge happens such that the large current is momentarily generated, the foregoing high voltage device still cannot effectively prevent the electronic apparatus from being damaged by the electrostatic discharge, and the large current momentarily generated due to the electrostatic discharge may still flow through the high voltage device to other internal circuits so that devices in the other internal circuits are damaged.

Power management circuit and high voltage device therein


A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2.times.10.sup.4 cm.sup.-2, a carbon concentration of 2.5 to 20.0.times.10.sup.15 cm.sup.-3, a boron concentration of 2.0 to 20.0.times.10.sup.16 cm.sup.-3, an impurity concentration other than carbon and boron of at most 1.times.10.sup.17 cm.sup.-3, an EL2 concentration of 5.0 to 10.0.times.10.sup.15 cm.sup.-3, resistivity of 1.0 to 5.0.times.10.sup.8 .OMEGA..multidot.cm and a mean residual strain measured by photoelastic analysis of at most 1.0.times.10.sup.-5.

1. Field of the Invention
The present invention relates to a GaAs single crystal substrate and an epitaxial wafer using the same. More specifically, the present invention relates to a GaAs (gallium arsenide) single crystal substrate used for an integrated circuit and a microwave element, and to an epitaxial wafer using the same.
2. Description of the Background Art
Semi-insulating GaAs crystal has been conventionally fabricated through a manufacturing method such as Liquid Encapsulated Czochralski method (LEC method) and Vertical Bridgeman method (VB method).
It has been possible to control dislocation density of the GaAs single crystal substrate within the range of 1000 to 100000 cm.sup.-2, by adjusting temperature gradient and cooling rate at the time of growth.
Carbon concentration and EL2 concentration of the GaAs single crystal substrate have been controlled by adjusting impurity concentration of a solution, ratio of Ga with respect to As and thermal hysterisis after solidification. Generally, two concentrations, that is, the carbon concentration and the EL2 concentration are considered as factors controlling resistivity. With the carbon concentration being in the range of 0.9 to 10.0.times.10.sup.15 cm.sup.-3 and EL2 concentration being 12.0 to 16.0.times.10.sup.15 cm.sup.-3, a substrate having the resistivity of about 0.1 to about 2.0.times.10.sup.8 .OMEGA..multidot.cm has been manufactured.
Reference 1 (T. Kawase et al. Proc. Of the 9th Conf. on Semiconducting and Insulating Materials, Toulouse, France (1996) 275-278) discloses an example of a GaAs single crystal substrate having low dislocation density fabricated through the VB method. The GaAs single crystal substrate has carbon density or concentration of 7 to 8.times.10.sup.15 cm.sup.-3, EL2 concentration after heat treatment of 1.3.times.10.sup.16 cm.sup.-3, resistivity of 3.5 to 6.5.times.10.sup.7 .OMEGA..multidot.cm, mean dislocation density in plane of 1000 to 2000 cm.sup.-2, and mean residual strain measured by photoelastic analysis of 0.2 to 0.3.times.10.sup.-5.
The conventional GaAs single crystal substrate has been expected to be used as a substrate material of electronic devices requiring high speed operation and low power consumption.
Among substrates used for electronic devices, a substrate having an epitaxial thin film layer grown thereon to provide a device operation layer is referred to as an "epitaxial wafer." In manufacturing the epitaxial wafer, when the epitaxial thin film layer is grown, it is necessary to heat the substrate to a temperature called growth temperature, and to bring the surface of the substrate to be in contact with Ga, As and a small amount of impurity called a dopant, in a liquid or gas phase. The epitaxial wafer having a plurality of epitaxial layers stacked on the substrate is subjected to surface etching, deposition of metal for electrodes, and processed into chips, whereby electronic devices are formed. A fundamental characteristic of a thus formed electronic device is amplification of a voltage input signal. Particularly, an electronic device used for satellite communication or the like is required to have a high output and operability at high voltage. Therefore, there has been greater need for a GaAs single crystal substrate having a superior breakdown withstanding characteristic.
The conventional single crystal substrate, however, generally has low carbon concentration and therefore it cannot withstand thermal stress-strain when the temperature is increased to form the actual epitaxial layer, so that steps, which are referred to as slips, result on the substrate surface. When devices are fabricated on the steps, desired device characteristics cannot be attained, and hence production yield is significantly degraded.
Further, the substrate has low resistivity and a number of deep levels such as EL2 within an energy band, and therefore only devices having a low breakdown withstanding characteristic can be provided.

GaAs single crystal substrate and epitaxial wafer using the same


A steer-by-wire steering system for a vehicle is disclosed, comprising a steering wheel unit, connected with a wheel unit. The steering wheel unit has a steering wheel angle sensor, a steering wheel actuator for setting a steering wheel target torque, and a steering wheel controller for actuating the steering wheel actuator. The wheel unit has a steering sensor for capturing at least one actual steering value, a wheel actuator for setting a target steering value, and a wheel controller. The wheel controller is designed to calculate a virtual torsion rod torque based on the target steering value and the actual steering value, to actuate the wheel actuator based on the calculated virtual torsion rod torque, and to transfer the calculated virtual torsion rod torque to the steering wheel unit. The steering wheel controller is designed to calculate the steering wheel target torque based on the transferred virtual torsion rod torque.

This background section is provided for the purpose of generally describing the context of the disclosure. Work of the presently named inventor(s), to the extent the work is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.
Electromechanical steering systems are used in vehicles, in particular motor vehicles. In this case in addition to a mechanical link between a steering wheel and steerable wheels depending on steering torque on the steering wheel, support torque is applied by a wheel actuator. If the wheel actuator fails, the vehicle can still be steered by the mechanical link. The steering torque is captured in this case in the form of torsion rod torque by means of a torsion rod and used as an input value for a steering force support system that calculates from this the support torque to be applied by the wheel actuator.
Furthermore, steer-by-wire steering systems are known in which there is no longer any mechanical connection between the steering wheel and the steerable wheels of the vehicle. These steer-by-wire steering systems comprise a steering wheel unit and a wheel unit that are connected to each other by means of a communication link. A captured steering movement of the steering wheel is transmitted to the wheels by means of a wheel actuator such as an electric motor. To enable haptic feedback from the wheels to the steering wheel and thereby a realistic steering sensation for the driver even without the mechanical connection, the steering wheel unit comprises a steering wheel actuator such as an electric motor through which the steering wheel can be accelerated and braked by applying a corresponding torque.
A steering system with at least one wheel actuator and at least one steering wheel actuator is known from DE 199 21 307 A1, wherein a rule deviation between the setpoint and a controlled variable is forwarded via the steering wheel to the driver. A steer-by-wire steering system is also known from DE 100 51 864 A1 that forwards a rule deviation via the steering wheel to the driver.

Steer-by-wire steering system for a vehicle, and method for operating a steer by-wire steering system


A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

The present invention relates to a magnetic structure, and more specifically, to laminated magnetic material for on-chip magnetic inductors/transformers.
Electroless plating is a technique of plating metal by chemical rather than electrical means, in which the piece to be plated is immersed in a reducing agent that, when catalyzed by certain materials, changes metal ions to metal that forms a deposit on the piece.
Further, electroless plating, also known as chemical or auto-catalytic plating, is a non-galvanic plating method that involves several simultaneous reactions in an aqueous solution, which occur without the use of external electrical power. It is mainly different from electroplating by not using external electrical power. On the other hand, electroplating is a process that uses electric current to reduce dissolved metal cations so that they form a coherent metal coating on, e.g., an electrode.

Laminated magnetic materials for on-chip magnetic inductors/transformers

INTERNATIONAL BUSINESS MACHINES CORPORATION


A discharge tube is assembled from three sections formed of metal. A first discharge tube element and a second discharge tube element are connected with an insulator for forming a discharging gap and vacuum-sealing interposed between connecting flanges of both discharge tube elements along with an O-ring. The first discharge tube element and a third discharge tube element and a third discharge tube element are connected in a similar manner, and a discharge gap is formed between adjacent discharge tube elements. A high-frequency power supply is connected to each discharge tube element. Respective discharge tube elements are provided with cooling medium flow paths separately each other.

The present invention relates principally to a plasma generating apparatus used in fabricating semiconductor devices, liquid crystal display panels and solar cells and particularly in processes of etching, ashing, thin film growth by chemical vapor deposition (CVD), sputtering, surface modification and chamber cleaning, and more specifically to a plasma generating apparatus of generating plasma by applying high-frequency power to gas for plasma generating, and particularly to technology for retarding thermal deterioration of a discharge tube. However, an application subject of a plasma generating apparatus in accordance with the present invention is not intended to be limited to the fabrication of semiconductor devices and is widely applicable for any desired objects.
In FIG. 18, reference numeral 101 indicates an insulating discharge tube, numeral 102 an insulating cooling medium flow tube, numeral 103 an upper flange for supporting a discharge tube, numeral 104 a lower flange for supporting a discharge tube, numeral 104a a cooling medium inlet, numeral 103a a cooling medium outlet, numeral 105 a gas introduction flange, numeral 105a a gas induction port for plasma, numeral 106 a flange for mounting to a device, numeral 106a a plasma discharge port, numeral 107 an induction coil, numeral 108 a high-frequency power supply, numerals 109 to 111 O-rings, numeral 112 a plasma generating space and numeral 113 a cooling medium flow space.
The outer periphery of the discharge tube 101 formed cylindrically is enveloped with the cooling medium flow tube 102 and the upper flange 103 for supporting a discharge tube is fitted externally to be fixed to the top end of the discharge tube 101 and the cooling medium flow tube 102 with O-rings 109, 110, respectively, interposed, and the lower flange 104 for supporting a discharge tube is fitted externally to be fixed to the bottom end of the discharge tube 101 and the cooling medium flow tube 102 with O-rings for vacuum-sealing 109, 110, respectively, interposed, and a double tube structure is constructed through such a fitting construction. In this double tube structure, the discharge tube 101 and the cooling medium flow tube 102 are coaxial, and the annular cooling medium flow space 113 is formed between both. The lower flange 104 for supporting a discharge tube is provided with the cooling medium inlet 104a communicating with the cooling medium flow space 113, and the upper flange 103 for supporting a discharge tube is provided with the cooling medium outlet 103a communicating with the cooling medium flow space 113. The gas introduction flange 105 which almost blocks the top end opening of the discharge tube 101 is made to abut on and fixed to the upper flange 103 for supporting a discharge tube with the O-rings 111 for vacuum-sealing interposed. The gas introduction port for plasma 105a is provided along a central axis of the gas introduction flange 105 in a state of communicating with the plasma generating space 112 of the discharge tube 101. The flange 106 for mounting to a device is made to abut on and fixed to the lower flange 104 for supporting a discharge tube in a state of communicating with the plasma generating space 112 of the discharge tube 101 with the O-rings 111 interposed. The induction coil 107 is wound on an outside of the outer cooling medium flow tube 102 constituting the double tube structure, and the induction coil 107 is connected to the high-frequency power supply 108. Further, an impedance matching device, not shown, is interposed between the induction coil 107 and the high-frequency power supply 108.
A plasma generating apparatus constructed as described above is used in a state of being attached to a plasma processing chamber, not shown, at the flange 106 for mounting to a device. Interior space of the plasma processing chamber and the plasma generating space 112 of the plasma generating apparatus is evacuated by evacuating the plasma processing chamber of air. Then, gas for plasma generation (discharging gas) is supplied from the gas introduction port for plasma 105a toward the plasma generating space 112 and high-frequency power is supplied to the induction coil 107 by actuating the high-frequency power supply 108, and a high-frequency electromagnetic field is generated in the plasma generating space 112. Simultaneously, a cooling medium is supplied from the cooling medium inlet 104a located on the lower side, is moved upward in the cooling medium flow space 113 and is discharged from the cooling medium outlet 103a.
The gas for plasma generation flows into the plasma generating space 112, and plasma ignition due to high-frequency discharge occurs in a small region of the flowing gas by action of the high-frequency electromagnetic field upon the gas for plasma generation. Resulting from the plasma ignition occured in a small region, plasma generation is spread almost across the whole of the gas flowing in the plasma generating space 112. The gas which is ionized to plasma in the plasma generating space 112 in this manner, i.e., plasma flows from the plasma discharge port 106a of the flange 106 for mounting to a device into the plasma processing chamber, not shown, and performs plasma processing, such as etching and ashing for semiconductor wafer and liquid crystal substrate, in the plasma processing chamber.
The plasma which is generated in the plasma generating space 112 becomes a high temperature. The discharge tube 101 forms the plasma generating space 112 which is a space for ionizing the gas for plasma generation being introduced from the gas introduction port for plasma 105a to plasma. Accordingly, the discharge tube 101 is raised in temperature due to contact with plasma of a high temperature. To limit the temperature rise within a predetermined range, heat exchange is conducted by flowing the cooling medium through the cooling medium flow space 113 surrounding the outer periphery of the discharge tube 101.
Though the discharge tube 101 is cooled as described above, it is inevitable that temperature difference occurs between the face of the inner circumference of the discharge tube 101, exposed to plasma of a high temperature, and the face of the outer periphery of the discharge tube 101, contacting with the cooling medium. Further, generated plasma of high temperature is localized in some cases, and so temperature difference is developed in the direction of a tube axis and in the circumferential direction in the discharge tube 101 as well. Thermal deformation is produced in the discharge tube 101 resulting from such temperature difference.
In a plasma generating apparatus of this sort of high-frequency discharge of inductive coupling type in which induction coils are arranged on an outer periphery of a discharge tube for a discharge tube for flowing the gas for plasma generation, the following conditions are required. That is, since a high-frequency electromagnetic field should be formed in the plasma generating space 112 of the discharge tube 101 by high-frequency power supplied from the induction coils 107 arranged outside of the discharge tube 101, the discharge tube 101 should be made from material other than a conductor, i.e.,an insulator (inductor) in order not to form electromagnetic shielding. The cooling medium flow tube 102 located at an outer periphery of the discharge tube 101 should also be of insulator. As such an insulator, there are, for instance, quartz, high purity alumina, aluminum nitride, glass and sapphire. Cooling medium flowing through the cooling medium flow space 113 is preferably a substance which does not absorb high-frequency power applied as far as possible, as well.
As described above, thermal deformation tends to be easily produced in the discharge tube 101, but since the discharge tube 101 is made from insulator, it has low thermal conductivity and the insulating discharge tube 101 experiences high temperature of the inner surface thereof and is apt to cause thermal deterioration in spite of cooling.
In addition, the discharge tube 101 has a large pressure difference between the outside atmosphere and the inside of the wall of the discharge tube since the plasma generating space 112 thereof is evacuated.
Further, though gas for plasma generation introduced into the plasma generating space 112 varies with a use and a condition, in some cases highly reactive plasma is generated depending on a gas property and there is possibility that the discharge tube 101 is subject to corrosion.
Further, an insulator is generally low in strength in comparison with metal material.
Due to such a high temperature, a temperature difference, a pressure difference and corrosion, there is a possibility that failures such as cracks and fractures are generated in the discharge tube 101, which is made from an insulator and relatively low in the strength, when in use for a long time. If the insulating discharge tube 101 should fail, and vacuum-sealed conditions are broken and it is not capable of producing a vacuum condition of the plasma generating space 112, plasma generation itself becomes impossible. And, if the insulating discharge tube 101 fails, the cooling medium escapes and the escaped cooling medium flows into a plasma processing chamber unexpectedly and possibly contaminates substances to be processed such as semiconductor wafer.
There is also a plasma generating apparatus of a capacitive coupling type other than such an inductive coupling type. This apparatus is one in which a pair of curved-shaped electrodes are opposed on a face of the outer periphery of a discharge tube made from an insulator such as glass, and high-frequency power is applied to both electrodes. A high-frequency electromagnetic field is produced in a plasma generating space within a discharge tube, discharge is developed by ionizing gas for plasma generation, and therefore plasma is generated. Also in this case, as the discharge tube, an insulating discharge tube is used, and therefore there is the same problem as the above.
Further, the discharge tube 101 made from insulator prepared with quartz, high purity alumina, aluminum nitride, glass and sapphire is considerably high in its initial cost.
Accordingly, it is a principal object to provide a plasma generating apparatus to prevent failure such as cracks and fractures and leakage of cooling medium due to thermal deterioration of a discharge tube.
The present invention of a plasma generating apparatus intended to attain the object described above uses metal material as component material of a discharge tube in place of insulator of prior art. The reason for this is that metal material has a higher resistance against heat and a higher physical strength compared with insulator.
However, it is insufficient only to replace the material. The reason for this is that when the whole discharge tube has been simply composed with metal material, high-frequency power generated by an induction coil located on an outer periphery of a discharge tube cannot enter into the interior of metal material, i.e., a discharge tube due to the effect of electromagnetic shielding by metal material, i.e., a conductor. In other words, high-frequency power cannot be provided from an induction coil located on an outer periphery of a discharge tube to a plasma generating space within a discharge tube.
There is a plasma generating apparatus of a capacitive coupling type, rather than an inductive coupling type, utilizing high-frequency power. In the capacitive coupling type, when the whole discharge tube is composed of metal material, there is a problem of how to construct and to locate a pair of electrodes. When a pair of electrodes are located within a discharge tube of metal material, each electrode is required to be located in a state of being insulated and isolated from a discharge tube of metal material. When a pair of electrodes are located within a discharge tube, these electrodes become an obstruction against the flow of gas/plasma. Further, since a pair of electrodes is required, this leads to complication of the structure and increase in cost.
Thus, the object cannot be attained by a simple idea that component material of a discharge tube is only replaced with metal material.
Consequently, in the present invention, when a discharge tube is composed of metal material which is excellent both in thermal resistance and in physical strength compared to an insulator, it is noted that the discharge tube is a conductor and it is functionally the same as an electrode in the fact of being a conductor. That is, it is feasible to use a discharge tube both as itself and as an electrode, conversely, the feasibility of using an electrode both as itself and as a discharge tube exists.
In view of the above, a plasma generating apparatus of a first embodiment of the present invention is one, wherein each discharge tube element, of a discharge tube having a plurality of sections in a direction of a tube axis, is fabricated from metal materials and the discharge tube elements of metal material are connected hermetically to each other with an insulator interposed and a discharge gap is formed between the discharge tube elements. The foregoing plasma generating apparatus is constructed so to enable plasma ignition at foregoing discharge gap by applying high-frequency power.
Accordingly, a discharge tube is obtained by dividing a discharge tube at one point or a plurality of points in the direction of a tube axis thereof by cutting across the direction of the tube axis. The number of the discharge tube elements is two or more. A plurality of the discharge tube elements are lined in the direction of the tube axis and combined, to thereby construct a discharge tube. Each individual discharge tube element is fabricated from metal materials. When a plurality of the discharge tube elements of metal material are lined in the direction of the tube axis and combined, connecting the discharge tube elements to each other in a state of direct contacting causes the whole of the discharge tube obtained as a result of being connected to become a single conductor, so that the discharge tube cannot be used both as itself and as an electrode. Further, there is also a problem in vacuum-sealing. Accordingly, each of a plurality of the discharge tube element of metal material is connected to each other with an insulator interposed between both of the discharge tube elements. This insulator is interposed to form a discharge gap between both of them. In other words, each discharge tube element is used both as itself and as a discharge electrode, and the insulator is what has the function of securing a discharge gap between the discharge tube elements as the electrode. Moreover, an insulator also has a function of connecting hermetically discharge tube elements to each other. Yet further, when it is difficult to secure the hermeticity only with the insulator, sealing materials such as an O-ring are used.
Further, as a metal material which composes the discharge tube element, any material may be used in principle, but a material which produces less ill effect on substances to be processed, such as semiconductor devices, may be preferably used. In other words, the reason for this is that it cannot be said that there is not a possibility that a face of the inner circumference of a discharge tube element of metal material is subjected to sputtering by plasma, and the sputtered particles flow out from a plasma generating space as conductive material. In this sense, aluminum is preferable. Further, aluminum to which anodic oxidation treatment is applied is preferred to prevent corrosion by plasma. It is better to avoid using stainless steel, copper or the like as there is a possibility that these materials cause contamination. However, stainless steel, copper or the like may be used in some conditions.
Moreover, as an insulator for forming a discharging gap, any material may be used in principle, but an inorganic insulator of high purity, such as high purity alumina, sapphire, quartz and aluminum nitride, is preferable considering the heat resistance. Alternatively, polyimide, tetrafluoroethylene (Teflon (trademark of Du Pont Corp.)), polyethylene may also be used.
With respect to high-frequency power, its frequency is not particularly limited. In the concerned technical field, normally, high-frequency is taken as several hundreds kHz or greater. In a narrow sense, high-frequency is taken as 10 to 100 MHz in some cases. Also, a microwave is taken as 1 GHz or greater and, in a narrow sense, it is taken as about 103 to 104 MHz (2.45 GHz is well known in magnetron applications) in some cases. In the case of a microwave discharge, it is common to introduce a microwave using a waveguide. Though there are such technical notions generally accepted as described above, in the present invention, high-frequency power may include microwave power, and it is not necessary to be particular about the frequency if plasma ignition and plasma generation are possible.
A set of the discharge tube elements connected to each other as described above may be only a couple (the number of elements is two), two couples (the number of elements is three) or more (the number of elements is four or more).
In either case, by connecting each of a plurality of discharge tube elements of metal material to each other as described above, a discharge tube is constructed, and, in this discharge tube, almost the whole thereof becomes a tube for forming a plasma generating space for flowing gas for plasma generation and generated plasma while containing them in a necessary space, and simultaneously discharge tube elements adjacent to the direction of the tube axis serve as a pair of electrodes. That is, the discharge tube elements, respectively, have two functions different from those of each other. Consequently, it becomes possible to perform plasma ignition at the discharge gap between both discharge tube elements by applying high-frequency power to adjacent discharge tube elements.
Operation in accordance with the first embodiment of the present invention is as follows. Since a discharge tube consisting of a combination of a plurality of discharge tube elements of metal material is substantially formed of metal material, its physical strength is high compared with that of an insulating discharge tube in the case of prior art. The thermal strength is also high compared with that of an insulating discharge tube. Cooling properties are also good. Accordingly, even in a condition of being exposed to plasma of a high temperature, thermal deterioration is less. Further, the discharge tube element is not broken as distinct from an insulating discharge tube even though a large pressure is applied to the wall of the discharge tube element by a pressure difference since the interior of the discharge tube element is evacuated of air. Moreover, even when highly reactive plasma is generated, a discharge tube of metal material experiences less corrosion compared with an insulating discharge tube in the case of prior art. Yet further, this results in the extension of life and leads to reduction of maintenance. Still further, since plasma ignition is performed at a narrow gap, such as a discharge gap by applying high-frequency power, plasma ignition performance is good and plasma generation can be favorably realized. In addition, the discharge tube which is substantially of metal material almost as a whole becomes low in initial cost compared with a conventional insulating discharge tube, as well.
A plasma generating apparatus of a second embodiment of the present invention, has as a plurality of foregoing discharge tube elements of metal material, includes a first discharge tube element positioned at the middle, a second discharge tube element having a gas induction port for plasma and a third discharge tube element having a plasma discharge port, wherein these respective discharge tube elements are connected hermetically to each other in the direction of a tube axis. This corresponds to a more specific description of the first embodiment of the present invention described above. Here, any aspects of a gas introduction port for plasma and a plasma discharge port may be used. The discharge tube to be assembled from three sections. A discharge tube is divided into three discharge tube elements by being divided at two locations in the direction of a tube axis. There are a first discharge tube element at the middle, a second discharge tube element on the upstream side of a flow path, which has a gas introduction port for plasma, and a third discharge tube element on the downstream side of a flow path, which has a plasma discharge port.
An advantage the discharge tube assembled from divided three sections is as follows. Functions of a discharge tube can be separated into three functions, that is, a function introducing gas for plasma generation from the outside, ionizing gas to plasma by igniting gas in a plasma generating space, and supplying the generated plasma to a plasma processing chamber. Corresponding to the functions, three discharge tube elements are prepared, and thereby it becomes possible to adopt a constitution suitable for each function. In addition, discharge gaps are located at two positions of the upstream and the downstream of a flow path, and the performance of plasma ignition becomes high when it is arranged to perform plasma ignition at both discharge gaps. Plasma ignition is not necessarily required to be performed at both discharge gaps, and it might be performed at either discharge gap.
A plasma generating apparatus of a third embodiment of the present invention the second embodiment of the present invention described above, wherein, as the relation of connection between the foregoing first to third discharge tube elements and a high-frequency power supply supplying the foregoing high-frequency power, a high voltage terminal of the foregoing high-frequency power supply is connected to the foregoing middle first discharge tube element and a grounding terminal of the foregoing high-frequency power supply is connected to the foregoing second and third discharge tube elements on both sides. This corresponds to a more specific description of the second embodiment of the present invention described above.
An upstream second discharge tube element communicates with an external gas piping and gas cylinder through its gas introduction port for plasma. Also, a downstream third discharge tube element communicates with an external plasma processing chamber at its plasma discharge port. It is a problem from a safety standpoint to apply a high voltage terminal of the high-frequency power supply to a gas piping and a gas cylinder. And, it is also a problem from a safety standpoint to apply a high voltage terminal of the high-frequency power supply to a plasma processing chamber. In the latter, there are two safety problems of products and humans. Therefore, safety is secured by connecting a grounding terminal of the high-frequency power supply to both of the second and the third discharge tube elements on both sides. When a high voltage terminal of the high-frequency power supply is connected to the first discharge tube element at the middle, the first discharge tube element functions intrinsically as a common high voltage for both of a second discharge tube element and a third discharge tube element, and further ensures the respective levels of a high-frequency power (voltage) applied are similar.
A plasma generating apparatus of a fourth embodiment of the present invention, includes the first embodiment described above, has a plurality of foregoing discharge tube elements of metal material, includes a first discharge tube element positioned at the middle, an upstream second discharge tube element having a gas introduction port for plasma, a downstream third discharge tube element having a plasma discharge port, an intermediate fourth discharge tube element positioned between foregoing middle first discharge tube element and foregoing upstream second discharge tube element and an intermediate fifth discharge tube element positioned between the foregoing middle first discharge tube element and foregoing downstream third discharge tube element, wherein these respective discharge tube elements are connected hermetically to each other in the direction of a tube axis.
Since a mean free path of an electron becomes short as the gas pressure of a plasma generating space increases, it becomes difficult to spread plasma generation across the whole of the plasma generating space widely.
The distance traveled by a particle from one collision to next collision is referred to as a free path, and the average value thereof is referred to as a mean free path. A mean free path is inversely proportional to the gas pressure at a constant temperature. That is, the higher the gas pressure is, the shorter a mean free path of an electron is. Under the high gas pressure, since a mean free path of an electron becomes short, plasma generation will be limited to the vicinity of a discharge gap. Since, in a discharge tube assembled from three sections, the length of the middle first discharge tube element in the direction of tube axis becomes large in comparison with an inside diameter of the tube, a linkage between a plasma region centered on a discharge gap between the first discharge tube element and the second discharge tube element and a plasma region centered on a discharge gap between the first discharge tube element and the third discharge tube element is lost, and plasma results in not spreading across the whole of the plasma generating space of the discharge tube. When plasma regions are in conditions of losing such linkage, the efficiency of plasma generation becomes extremely low since there is a definite limit on an amount of plasma generated and an increase of plasma generation cannot be expected even though the power applied from a high-frequency power supply is increased.
Thus, the fourth embodiment of the present invention allows plasma generation efficiency to be high even in a condition of a high gas pressure which causes a mean free path of an electron to shorten. That is, a feature of the present invention is a discharge tube assembled from five sections. Compared with a discharge tube assembled from three sections, it can be said that by dividing the middle first discharge tube element further at the two points in the direction of a tube axis, two discharge tube elements of a fourth discharge tube element and a fifth discharge tube element are additionally made in addition to the first discharge tube element newly made and therefore a discharge tube is divided into five discharge tube elements on the whole including the upstream second discharge tube element and the downstream third discharge tube element. As a result, the distance between two discharge gaps is divided into three smaller sections in this invention. Dividing into three may include equal three sections and also unequal. Briefly speaking, the distance between discharge gaps adjacent to the direction of a tube axis is sufficiently shortened.
Accordingly, since gas for plasma generation is in a condition of a high gas pressure, a mean free path of an electron is short and four plasma regions, centered on the first to the fourth discharge gaps, respectively, in the direction of a tube axis is short in respective holding ranges of the direction of a tube axis, and plasma regions adjacent to the direction of a tube axis link together because the distance between discharge gaps is sufficiently shortened as described above. Therefore, a chain reaction of plasma generation is advanced and a plasma region is spread across the whole of the plasma generating space, and four plasma regions are combined into one. Even in a condition of a high gas pressure, an amount of plasma generated increases, and therefore it is possible to raise the efficiency of power supply and to enhance the efficiency of plasma generation.
A plasma generating apparatus of the fifth embodiment of the present invention includes the fourth embodiment of the present invention described above, wherein, as the relation of connection between the foregoing first to fifth discharge tube elements and a high-frequency power supply supplying the foregoing high-frequency power, a grounding terminal of the foregoing high-frequency power supply is connected to the foregoing middle first discharge tube element, the foregoing upstream second discharge tube element and the foregoing downstream third discharge tube element, and a high voltage terminal of the foregoing high-frequency power supply is connected to the foregoing intermediate fourth discharge tube element and the foregoing intermediate fifth discharge tube element.
Operation in accordance with the fifth embodiment of the present invention is as follows. Safety is secured by connecting a grounding terminal of a high-frequency power supply to an upstream second discharge tube element communicating with a external gas piping and gas cylinder through a gas induction port for plasma, a downstream third discharge tube element communicating with an external plasma processing chamber at a plasma discharge port and a middle first discharge tube element being separated by one intermediate element from the second and the third elements, respectively. The discharge tube element is constructed rationally in such a way that the levels of a high-frequency power (voltage) applied are similar to all of discharge gaps by connecting a high voltage terminal of the high-frequency power supply commonly to the intermediate fourth discharge tube element and the intermediate fifth discharge tube element.
A plasma generating apparatus of a sixth embodiment of the present invention includes the first embodiment described above, wherein the number of a plurality of foregoing discharge tube elements of metal material is an odd number.
Since a mean free path of an electron becomes short as gas pressure of a plasma generating space increases, it becomes difficult to spread plasma generation across the whole of the plasma generating space. Therefore, in the above fourth embodiment of the present invention, the distance between discharge gaps adjacent to the direction of a tube axis is shortened by making a discharge tube assembled from five sections and the efficiency of plasma generation is enhanced.
However, when the distance between discharge gaps is long even in a discharge tube assembled from five sections, the distance between discharge gaps may also be shortened by increasing further the number of division of the discharge tube to enhance the plasma generation efficiency.
In this case, as described later, it is preferred from a safety standpoint that the number of discharge tube elements is made an odd number by dividing a discharge tube into odd sections.
An advantage in accordance with the sixth embodiment of the present invention is as follows. Since the distance between discharge gaps can be set by finely adjusting, it is possible to set an optimal distance between discharge gaps depending on the conditions of plasma generation such as kinds of gas desired to be ionized to plasma, pressure of gas, applied electric power (voltage) and an applied frequency. And, when the number of division of a discharge tube is fixed, the distance between discharge gaps is lengthened in the case of a large size of a plasma generating apparatus, but, in accordance with the sixth embodiment of the present invention, an appropriate distance between discharge gaps may be set even in the case of a large size of a plasma generating apparatus.
A plasma generating apparatus of seventh embodiment of the present invention includes the sixth, wherein, as the relation of connection between the foregoing odd discharge tube element and a high-frequency power supply supplying the foregoing high-frequency power, a grounding terminal and a high voltage terminal of the foregoing high-frequency power supply are connected alternately to the foregoing odd discharge tube elements under the condition of connection that a grounding terminal of the foregoing high-frequency power supply is connected to an upstream second discharge tube element having a gas induction port for plasma and a downstream third discharge tube element having a plasma discharge port. This corresponds to a more specific description of the sixth.
When a grounding terminal and a high voltage terminal of a high-frequency power supply are connected alternately to a discharge tube element, in increasing the number of discharge tube elements, the levels applied to an upstream second discharge tube element and a downstream third discharge tube element vary depending on whether the number of discharge tube elements is an odd number or an even number.
That is, the levels applied of an upstream second discharge tube element differs from that of a downstream third discharge tube element when the number of discharge tube elements is an even number. And, the levels applied of an upstream second discharge tube element is similar to that of a downstream third discharge tube element when the number of discharge tube elements is an odd number.
Here, as described above, it is preferred to connect a grounding terminal of a high-frequency power supply to an upstream second discharge tube element and a downstream third discharge tube element. Therefore, the number of discharge tube elements is an odd number and connection relations as described above are taken.
A plasma generating apparatus of an eighth embodiment of the present invention includes the first embodiment, wherein the number of foregoing discharge gaps capable of plasma ignition is an even number.
Making the number of discharge gaps an even number requires basically to divide a discharge tube into an odd number and to make the number of discharge tube elements an odd number (taking the number of discharge gaps as n, the number of discharge tube elements becomes n+1).
However, when the length of a discharge tube element in the direction of a tube axis is shorter than the distance between discharge gaps required to link plasma regions into one, a distance between discharge gaps which is capable of plasma ignition may be substantially lengthened not by connecting a grounding terminal and a high voltage terminal of a high-frequency power supply alternately to a plurality of discharge tube elements, but by connecting a high-frequency power supply to a discharge tube element in such a way that the levels of a high-frequency power (voltage) applied from a high-frequency power supply are the same on adjacent two or more discharge tube elements.
That is, there is a location in which a grounding terminal or a high voltage terminal of a high-frequency power supply is connected to adjacent two or more discharge tube elements sequentially, and a discharge gap located at this location will not conduct plasma ignition since the levels of a high-frequency power (voltage) applied to the adjacent discharge tube elements are the same.
Hence, the gap is not a discharge gap. Therefore, a distance between discharge gaps capable of plasma ignition may be substantially lengthened.
On the one hand, it is preferred from a safety standpoint to connect a grounding terminal of a high-frequency power supply to an upstream second discharge tube element and a downstream third discharge tube element.
Therefore, it becomes a criterion that the number of discharge gaps capable of plasma ignition is an even number.
In this case, even though a grounding terminal of the high-frequency power supply is connected to an upstream second discharge tube element having a gas induction port for plasma and a downstream third discharge tube element having a plasma discharge port, the number of discharge tube elements is not necessarily an odd number and may be an even number.
An advantage in accordance with the eighth embodiment of the present invention is as follows.
The distance between discharge gaps required to link plasma regions into one varies with conditions of plasma generation such as kinds of gas, pressure of gas, applied electric power (voltage) and an applied frequency. Consequently, since it is required to set the length of a discharge tube element in the direction of a tube axis in conformity with the conditions of plasma generation, commonality of a discharge tube element is difficult.
A discharge tube element has been fabricated, of which the length in the direction of a tube axis is shorter than the distance between discharge gaps required to link plasma regions into one, and by contriving the order of connection of a grounding terminal or a high voltage terminal of a high-frequency power supply to be connected to each of a plurality of discharge tube elements to provide a distance between discharge gaps in conformity with the conditions of plasma generation, a distance between discharge gaps capable of plasma ignition may be set. Thus, commonality of a discharge tube element becomes possible.
Particularly, this manner is effective when a large number of discharge tube elements are used in the case of a large size of a plasma generating apparatus.
A plasma generating apparatus of a ninth embodiment of the present invention includes the first to the eighth embodiments, wherein connection between the foregoing discharge tube elements to each other lets flanges, which are directed radially outward, integrally conjoined to each discharge tube element to oppose to each other and the foregoing insulator is interposed between the opposite flanges.
Operation in accordance with the ninth embodiment of the present invention is as follows. Though a discharge tube is divided in the direction of a tube axis and a discharge tube is constructed by connecting the discharge tube elements resulting from that division to each other, a discharge tube is brought into an ultra-low pressure condition, even though temporarily, by evacuating. Accordingly, dividing a discharge tube becomes a significant problem on vacuum-sealing. A performance of vacuum-sealing has to be surely secured also in dividing. There is a structure of flange for this purpose. In each discharge tube element, a flange extending radially outward is integrally conjoined to the corresponding location connecting each discharge tube element to another discharge tube element. A dimension of the circumferential direction differs from that of the direction of a tube axis in the directivity. Accordingly, it is possible to construct a flange with sufficient size and area corresponding to the requirements. The requirements are the performance of vacuum-sealing and the strength of connection. A discharge tube element is connected to each other at the flanges opposed to each other with an insulator interposed between the flanges. When an insulator is supported by sandwiching it between the flanges with required area, performance of vacuum-sealing may be sufficiently secured. In addition, an arrangement of a seal material such as an O-ring also becomes easy. And, it also becomes possible to make the strength of connection sufficiently high. And, a discharge gap is formed by interposing an insulator, and, by setting sufficient area for the insulator interposed, it is possible to make the dimensional accuracy of a discharge gap sufficiently high since the deformation due to the external stress becomes less. This is extremely significant for plasma ignition.
In a plasma generating apparatus of a tenth embodiment of the present invention includes the above first to ninth embodiments, the foregoing respective discharge tube elements are provided with cooling medium flow paths separately each other.
Operation in accordance with the tenth embodiment of the present invention is as follows. A discharge tube is excellent in heat resistance compared with that of an insulating discharge tube in the case of prior art since respective discharge tube elements composing the discharge tube are formed of metal material. Even then, since the generated plasma is at a high temperature, it is preferred to cool a discharge tube. Though it is conceivable to cool with air, it is more effective to cool using a liquid cooling medium. Considering leakage at a portion of a connection between discharge tube elements, it is preferred to provide an individual cooling medium flow path for each discharge tube element. As for leakage at a circumferential surface of a discharge tube, since this discharge tube is formed of metal material and resistant to failures, such as cracks and fractures resulting from thermal detrioration as distinct from prior art using an insulating discharge tube, leakage of cooling medium at a circumferential surface of a discharge tube does not occur in principle. Thereby, a discharge tube composed of a plurality of elements allows preventing the leakage of cooling medium. And, with respect to kinds of cooling medium, it has been thought in the prior art that a substance which does not absorb high-frequency power as far as possible, for example, an expensive one such as deionized water, is preferable, but, in the present invention, there is not such a limit, and relatively inexpensive cooling medium available may be used and this reduces the running cost.
A plasma generating apparatus of an eleventh embodiment of the present invention includes the above first to ninth embodiments of the present invention, wherein a part of a plurality of the foregoing discharge tube elements is provided with cooling medium flow paths and the rest of the discharge tube elements are cooled with air.
Operation in accordance with the eleventh embodiment of the present invention is as follows. As for cooling of each discharge tube element, it is preferred to provide an individual cooling medium flow path for each discharge tube element like the above tenth aspect of the present invention, but when it is possible to fabricate a discharge tube element which can stand the heat of plasma generated even though a part of discharge tube elements is cooled with air without providing all of respective discharge tube elements with cooling medium flow, it becomes possible to provide only a part of discharge tube elements with cool medium flow paths and cooling the rest discharge tube elements with air. Such a constitution reduces the number of cooling medium flow paths, the initial cost and the running cost of a plasma generating apparatus including the reduction of equipment of piping system and consumption of a flowing cooling medium and simplifies constitution of a discharge tube.
A plasma generating apparatus of a twelfth embodiment of the present invention includes the first to eleventh embodiments of the present invention described above, wherein, in a relation between the foregoing discharge gap and the foregoing insulator, a gap between the foregoing discharge tube elements, connecting to form the foregoing discharge gap, is formed by connecting between a part along the direction perpendicular to the direction of a tube axis of the foregoing discharge tube element and a part along the direction of a tube axis of the foregoing discharge tube element.
Operation in accordance with the twelfth embodiment of the present invention is as follows. Though a discharge gap is constructed by connecting a discharge tube element to each other in a state of supporting an insulator by sandwiching it, a face of the inner circumference of the insulator is communicated with an inner plasma generating space through the discharge gap. Accordingly, in a condition of containing a conductive substance in plasma, there is possibility that the conductive substance adheres to a face of the inner circumference of an insulator across a discharge gap. An insulator has a role isolating a pair of discharge tube elements and is supported by being sandwiched between a pair of discharge tube elements. Accordingly, a face of the inner circumference of an insulator is physically and mechanically connected to both discharge tube elements apart from electrically. Accordingly, when the conductive substance adheres to a face of the inner circumference of the insulator, there is a possibility that both discharge tube elements of metal material are short circuited through the conductive substance. Occurrence of a short circuit obstructs plasma ignition itself, and reliability of plasma generation becomes a problem.
A gap of both discharge tube elements connected to a discharge gap is bent. The manner of bending may be inflecting or curving. Briefly speaking, it might be well that a gap takes aspects of connecting between a part along the direction perpendicular to the direction of a tube axis and a part along the direction of a tube axis of a discharge tube elements, respectively. Each part may be connected to each other orthogonally or through the medium of a curved portion with a certain curvature or tapered portion. Even if there is an event that conductive substance in a plasma generating space plunges into the rear gap of a discharge gap due to collision against another particle, there is a tendency that the path is along the direction perpendicular to the direction of a tube axis. If a conductive substance adheres at the rear end of the rear gap of a discharge gap, a part along the direction of a tube axis still remains an insulator. A flying conductive substance resists colliding against the part along the direction of a tube axis, the adhesion and deposition are retarded. Thus, by synergy between that there is a spacial allowance and resistance to collision, it is possible to prevent a short circuit through a conductive substance and reliability of a plasma generating apparatus may be enhanced.
A plasma generating apparatus of a thirteenth embodiment of the present invention includes the above first to twelfth embodiments of the present invention, wherein an insulator interposed between foregoing discharge tube elements is separated into an outer body portion for vacuum-sealing and an inner protecting portion exposed to plasma.
Operation in accordance with the thirteenth embodiment of the present invention is as follows. Since an insulator for forming a discharge gap is exposed directly to the plasma of a high temperature and the vicinity of the insulator is not cooled directly, it is subject to local overheating and apt to cause the thermal deformation, and there is a possibility that the thermal deformation produces the failure such as cracks and fractures in the insulator to cause the vacuum break. Thus, an insulator is separated into an inner protecting portion and an outer body portion, and a body portion is provided with a function of vacuum-sealing, and a protecting portion is made a portion for allowing the crack and fracture. Even if cracks and fractures develop due to an exposure to plasma, the protecting portion prevents the crack and fracture of the protecting portion from communicating with the body portion. That is, the protecting portion is made to bear the role of a breakwater against thermal deterioration, made victims in thermal deterioration and made to protect the rear body portion. Further a body portion and a protecting portion may be spatially separated or contacted. It is preferred for limiting the communicating to keep them separated a little. If it is possible to substantially prevent failure such as the crack and fracture from communicating, a substance which is integrally connected to a body portion through the medium of a narrow part may also be used. Since the body portions are free from thermal deterioration, the performance of vacuum-sealing is secured over an extended time period and the reliability of a plasma generating apparatus may be enhanced.

Multi-sectional plasma generator with discharge gaps between multiple elements forming a plasma discharge cavity


A state machine and an external interface, including its associated input-outputs (IOs), are always powered on and used to manage the chip power modes and power mode transitions. The chip power modes are defined as RUN, HIBERNATE, POWERDOWN, with many more possible with this invention. For example, once the device is in HIBERNATE or POWERDOWN modes, the power supplies to the IC are either reduced, or completely disconnected except for this controller state machine. This invention's state machine and control mechanism, in response to some external “wake up event”, will bring the chip to RUN mode by managing the state of the external power supplies through its control interface. The implementation achieves small die size and extreme low power consumption.

1. Field of the Invention
The present invention is directed to managing low power modes in Integrated Circuits (ICs), and more particularly to providing a self-contained power management unit having intelligence and programmability separate from the main data processor for mobile multimedia devices.
2. Background Art
As more and more computing and multimedia facilities become available on mobile devices, there is an increasing need for a longer continuous operation of these devices without frequent charging of the battery. Another motivation for conserving the battery power is the increase of mobile applications, especially for business purposes where the devices in use are either away from a battery recharge source or there isn't enough time to recharge frequently. As a result, power consumption issues may limit the usability and performance of such mobile devices. Design techniques aimed at improving performance may therefore fall short if power management is not considered. To the same goal, power management units have been designed which operate at the low voltage ranges needed for these mobile devices to operate.
Present day devices have more and more features concomitant with the applications they are designed for. For example, the simple feature of alerting the user of an incoming call in a cell phone device can be performed in many ways, like electro-mechanical vibration of the device, emission of sound waves (phone-ring) or emission of light-waves. Each of these exemplary operations requires a varying amount of power. Using the same power level for such multiple features makes the functionality of the power management unit very inflexible.
An Integrated circuit device may be put into a 'hibernate' condition, where its voltage is so low that it can only save the state of its storage element, like volatile memory or shift registers. However, it cannot operate or function as far as running high level operations, multimedia applications, high speed data transfer or any CPU intensive processes are concerned. These devices may also be put into a very low voltage to a no voltage condition, wherein the capability to perform any external user related operations is not existent.
It is desired that in the above stated conditions, such devices should be capable of controlling the voltage source level, so that when needed, the voltage level can be increased to a level to allow higher level operations and functions and the transitions between different voltage levels be made possible.
Conventional power management devices do not have the capability to control their voltage source when in the zero to low power modes. They also lack any programmability for the same. There is also a lack of secure programmable power modes. There is thus, a need for a power management scheme flexible enough to accommodate varying power modes of an IC device and thereby provide the facility of managing and controlling the voltage source, independent of the main CPU or the processor, when the device is in one of such low power modes.

This patent is subject to a terminal disclaimer.

Method for managing and controlling the low power modes for an integrated circuit device


The present invention relates to wave pools and diversion channels that capture high kinetic energy portions of a wave generated within the wave pool, and redirects the captured wave portions to the vicinity of wave formation, preferably timed so as reinforce a subsequently generated wave. The high kinetic energy within the diversion channel creates an additional feature in the form of an action river for riders of a wave pool to enjoy. At the same time, capturing of portions of the wave reduces the backwash of the wave and stabilizes the level of water within the wave pool, especially for embodiments with wave generators and pools capable of high volume waves. Riders may enter the diversion channel and ride from the distal, beach end of the wave pool to the proximal, wave generating end.

Millions of individuals visit water parks every year to enjoy, among other attractions, various types of swimming pools. In particular, wave pools are generally known in the field as providing recreation involving artificially generated waves. The waves are traditionally formed by devices such as oscillating pressure caissons, periodic displacement devices, or devices for release of large volumes of water into the pool.
A new form of wave generation technology was disclosed in U.S. Pat. No. 5,833,393 to Carnahan et al., which is hereby incorporated by reference in its entirety. This technology is sometimes referred to as a wave cannon. A wave cannon transfers energy from the discharge of compressed air through a water-filled pipe and into a body of water to create swells or waves. Because of the nature of compressed gas, wave cannons may transfer large amounts of energy while providing unobtrusive infrastructure. This large amount of energy transfer improves the ability to produce larger waves.
In contrast, conventional wave generating technologies have been somewhat limited in the energy that can be imparted to the pool, based on the practical limits of size, mechanics, infrastructure, and cost. Thus, most wave pools are limited in size, with the larger wave pools being in the form of oversized swimming pools. Even with a smaller size, some wave pools incorporate special hydrodynamic features, such as narrowing waterways or wedge designs, to preserve or increase the wave height of these lower capacity waves.
The wave cannon may be scaled by size, number, orientation, and co-location. The wave cannon structure may be recessed, with structure located away from the body of water where an activity or water sport occurs. The structure of the wave generating device is thus removed from the area of activity and will not impair water sports. The small circular opening in the tubular chamber of a wave cannon permits novel orientations that enhance the production of large scale wave action similar to that in natural ocean environments. For example, a cluster of wave cannons at one end of a wave pool may generate waves sufficiently large for surfing.
A problem present in all conventional wave pools is the backwash caused by breaking waves. With smaller scale wave pools, this backwash has not been much of an issue. Simulated beaches or extensive shallows may be sufficient for smaller capacity breaking waves. However, the backwash of larger capacity waves may pose greater difficulties. The backwash of larger capacity waves may have the ability to draw individuals, floats, or surfboards into the paths of others located within the pool. The approach of a large capacity wave may then pose a safety hazard due to flotsam or individuals in the path of surfers or other individuals riding the wave.
Some conventional attempts to address the problems of this backwash have involved "lazy rivers" or water channels installed adjacent to the wave pool, and in which the intake and discharge of the lazy river is in fluid communication with the wave pool. Because a flow of water is desired from the wave breaking end of the pool to the wave generating end, some current may be created within the lazy river. This current has been created in some embodiments by permitting the breaking waves from the main pool to spill over a spillway or weir into the lazy river channel. Such pools are characterized by minor bottom shaping with largely dissipative beaches. In other cases, a current will be created within the lazy river channel by the installation of dedicated pumps. Some embodiments orient the inlet of the lazy channel and the dissipative slope of the simulated beach end so as to direct backwash into the mouth of the lazy river. Once established, the current is thus intended to draw some volume of water from the end of the wave pool in which waves break to the end of the wave pool where waves are formed, hopefully reducing the water backwashed to the deeper section of the wave pool.
The perimeter lazy river can reduce some of the backwash created in conventional wave pools by diverting some of the water. Of course, much of its effectiveness depends on the volumetric flow created by spill over or the volumetric flow rate of the pumps. However, it is impractical for wave pools having the large volume waves that are capable of being produced by the wave cannon. A greater reduction the backwash is required. The installation of pumps dedicated to generating a current in the lazy river provides additional infrastructure and cost. In addition, the slow current of a lazy river is inconsistent with the highly active sport of surfing.
Thus, conventional approaches to the reduction of wave pool backwash are not well suited to high capacity wave pools.


A body member has a plurality of pegs projecting integrally in spaced relation and in a line. These pegs form individual hooking pegs for swivels of elongated fishing leaders and also form wrapping areas therebetween for leaders which are wrapped in a direction parallel with the pegs. The body member has a puncturable surface whereby the fish hook end of the leader can be anchored by sticking the point of the fish hook into the body member. In one embodiment, the body member is rectangular and is formed of two halves secured adhesively together along the line of the pegs and holding the pegs in projecting integral relation. In another embodiment, the body member with the pegs is in the form of a drum mounted on the end walls of a box-like frame and having a crank handle on one end.

This invention relates to new and useful improvements in holders for pre-rigged fishing leaders.
Fishermen frequently like to pre-rig a supply of leaders so that new leaders can be installed quickly when the old ones are snagged or otherwise lost. A pre-rigged leader is from two to six feet long or longer. Such supply of pre-rigged leaders are difficult to store in the tackle box or fishing vest since they become tangled or snagged. Prior devices have been proposed for storing fishing leaders or lines to alleviate the tangling and snagging problems. One such device is shown in U.S. Pat. No. 2,791,863 wherein a wooden body member with slots is arranged to receive a line in wrapped relation and the hook is embedded in the wood. One disadvantage of such device is that the wood dulls the hook and another disadvantage is that it is not designed to hold pre-rigged fishing leaders. As stated, such pre-rigged leaders are quite long and would not fit on this prior device or in other devices such as shown in U.S. Pat. Nos. 2,080,794, 2,730,833, 2,749,654, 2,760,296, 3,490,168, and 3,564,755.


An innerspring construction for mattresses, cushions and the like, with jackets encasing separate coil springs which are arranged in a parallel fashion with respect to their longitudinal axes, the jackets being made out of oblong strips of cover which have been adhered side to side, the adhesive consisting of an relatively flexible coating which is spread in a substantially continuous manner over the contact surface of at least certain adjacent jackets of adjacent strings, in such a way that deformation of both said fabric and the adhered strings remain possible in the direction of the longitudinal axes of the springs.

1. Field of the Invention
The invention is relating to an innerspring constrution for mattresses, cushions and the like, including separately pocketed coil springs which are placed parallel to one another according to their longitudinal axis, the pockets being manufactured out of oblong strips of fabric cover, which are fixed by means of glue to each other, whereby the longitudinal axis of the separated coil springs are arranged in a transverse fashion with respect to the longitudinal axis of the cover, the springs being encased in these close-fitting pockets.
2. Description of the Prior Art
Such an innerspring construction has been described in the European Patent Application No. 0154076. According to this European Patent Application two adjoining strips of pocketed springs are connected by means of an adhesive which is applied in a series of dots or strips. The reason being, on one hand, to minimize use and consumption of adhesive and, on the other hand, to make sure that deformation along the axes of the springs remains possible.
As the adhesive is to be found only on a limited part of adjoining tangential surfaces of two spring covers, important forces are concentrated at the place of the linking dots or strips of adhesive, and hence attachments are at risk of loosening. If such an attachment breaks in a certain spot, the load is transmitted to the adjoining connections, resulting in an even higher load and a greater chance of breakage. The main object of the present invention is to remedy these advantages in a simple and economical way.

Innerspring construction for mattresses, cushions, and the like and process for manufacturing said construction