Fittings are provided for flexible sewage drain hoses to connect recreational vehicles to sewage facilities as may be found in public parks or other locations. The fittings include a shallow groove for storing an elastic ring, and a wider, deeper groove for placing the flexible sewer hose thereover. The ring can be quickly, easily manually dislodged from the storage groove and directed over the end of the hose where it contracts and securely holds the hose onto the fitting within the wide groove.

1. Field Of The Invention
The invention herein pertains to hose fittings and particularly to flexible sewage hose line fittings as are commonly employed with mobile homes, recreational vehicles (RV's), and campers for connection to various types of sewage treatment facilities such as in parks and campgrounds.
2. Description Of The Prior Art And Objectives Of The Invention
Recreational vehicle owners and others that have onboard bathroom plumbing must convert the plumbing to sewage treatment and/or disposal facilities at campgrounds, parks and other locations when parking for extended periods. It is conventional to use flexible plastic sewage hoses having an inside diameter of approximately three inches which may be reinforced with wire or otherwise constructed. Sewage facility stubs are generally located near the parking areas so the recreational vehicles can park nearby and by the use of a suitable length of flexible hose, easily reach and connect to the stub. With the recent growth in vehicle parks and campgrounds, stubs lack uniformity from park to park, thus requiring the RV owner to provide a fitting to match the threaded or unthreaded stub end as the case may be, to insure a tight, secure connection with the flexible sewage hose extending from the RV. In addition, a length of flexible sewage hose must oftentimes be joined to another length to obtain the desired footage, whereby a linear connector is required. Also, the sewage hose must be joined to the RV sewage tank outlet pipe, and outlet pipes vary in size, depending on the particular manufacturer and model of RV.
To accommodate the mating problems discussed above, various universal fittings have been developed in the past as have different types of tank connectors, linear fittings and the like. It is also conventional in the trade to utilize fittings having threaded ends or smooth wall ends around which tightenable metal or plastic bands can be placed and the hose thereby secured. Such metal or plastic bands often break or cannot be sufficiently tightened to insure a proper, leak proof connection, thereby causing a health hazard if sewage leaks therefrom.
With the aforesaid problems and other disadvantages associated with conventional sewage hose fittings, the present invention was conceived and one of its objectives is to provide hose fittings for use with recreational vehicles, trailers, campers, motor homes and the like allowing ease and convenience in safe, secure sewage hose hookups.
It is another objective of the present invention to provide hose fittings which employ a conical end for slidably receiving the flexible sewage hose thereover and a stretchable ring for securely holding the hose onto the fitting.
It is still another objective of the present invention to provide a hose fitting which includes a ridge having a shallow groove whereby the ring can be positioned thereon for quick removal prior to engagement with the flexible hose.
It is yet another objective of the present invention to provide a two piece hose fitting of the universal type having a reversible section which will increase its versatility.
Various other advantages and objectives of the present invention will be further explained in the detailed presentation thereof as set forth below.


Composite compositions and machine and contact tools, for example, metal boring tools and face mills that are manufactured from them. The tools are provided with composite structure to lighten the tools and yet retain the strength and durability of the tool. The novelty resides in the use of additives to certain composites that make up a portion of the tool, especially tool bars.

This invention deals with new and novel composite compositions and machine and contact tools, for example, metal boring tools and face mills that are manufactured from them. The tools are provided with composite structure to lighten the tools and yet retain the strength and durability of the tool. The novelty resides in the use of additives to certain fiber composite materials in the composites that make up a portion of the tool, especially tool bars.
Tool bars for use in mounting cutting tools such as most conventional boring and reaming bars are manufactured to be elongate and thin in order to machine a deep hole in a work product.
Being long and thin often leads to a bendable tool which is not easily tolerated in the industry as it creates low quality products. This bendability and lack of stiffness in the tool leads to chattering and in order to reduce this chattering, the speed of the boring tool is lessened and the feed rates are thus low, leading to low production rates. This problem has plagued the industry for a long time, and many approaches have been taken to provide tools that have high stiffness, less bendability, increased dampening, and decreased weight.
For example, various shapes of cutting tools and tool bars for use in mounting the cutting tools have been developed. Many other tool bars for use in mounting cutting tools, which are made of tungsten carbide alloy and tool steel having very excellent stiffness and rigidity characteristics, have been also developed in some countries.
However, since it is difficult to machine cemented carbide, there is a disadvantage, in that, manufacturing costs of a tool bar exhibiting optimum performance become very high. Further, since the natural frequency of a boring or reaming bar is low due to high densities of tungsten carbide and tool steel, there is a limitation on improvement of the cutting speed of the bar to remove metal and create a satisfactory finish. High weight causes several issues such as chatter, ease of use, release of the tool bars from the holder or adapter due to bending owing to the weight of the bar.
In addition, other tools, such as face mills are constructed to be heavy and durable so that they stand up to rigorous high stock removal and it would be advantageous to have such tools that could avoid or substantially avoid such adverse conditions, especially high temperature.
Fiber reinforced composites have an advantage over conventional materials in many applications because of their favorable strength to weight ratios, corrosion resistance, and unique stress coupling properties.
The method of manufacture is important in these fiber reinforced composites. The fiber orientation angle in each stiffness layer is alternated several times along the length of the component, internally, or in combination. Each time the fiber orientation angle is altered, a region of high shear is generated across the damping layer. By controlling the orientation angle, thickness, segment lengths and moduli, significant shearing occurs throughout the viscoelastic layer. Also, since the primary load path through the part is in the composite stiffness layers, the part retains high stiffness.
There are several patents dealing with cutting tools that are manufactured from tool bodies using composites. Once such device in which the body is manufactured from a carbon fiber composite in a curable epoxy resin can be found in U.S. Pat. No. 6,935,816, that issued on Aug. 30, 2005 which is incorporated herein for what it teaches about tool bars and their construction.
It has been discovered by the inventor herein that a portion of the tool can be constructed with the novel materials of this invention in order to reduce their weight yet retain their valuable properties such as strength and low chattering, that is, less or no vibration. This is especially valuable in tool bars.

Composite compositions and new and novel machine and contact tools


A method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin. Preferable are an embodiment in which the above-mentioned silicon source is an alkoxysilane compound, an embodiment in which the above-mentioned alkoxysilane compound is selected from an ethoxysilane oligomer and an ethoxysilane polymer, an embodiment in which the above-mentioned mixture is obtained by adding an acid to a silicon source, then, by adding a carbon source, and other embodiments. A silicon carbide powder produced by the above-mentioned method of producing a silicon carbide powder wherein the nitrogen content is 100 ppm or less is preferable. A sintered silicon carbide obtained by sintering the above-mentioned silicon carbide powder wherein the volume resistivity is 1xc3x97100 xcexa9xc2x7cm or more.

This application claims benefit of priority under 35 USC 119 based on Japanese Patent Application P2001-134526, filed May 1, 2001, the entire contents of which are incorporated by reference herein.
1. Field of the Invention
The present invention relates to a sintered silicon carbide which can be used as a semi-insulator or insulator and suitable for a semiconductor device and the like, a silicon carbide powder suitable for production of this sintered silicon carbide, and a method of producing a silicon carbide powder which can produce this silicon carbide powder efficiently.
2. Description of the Related Art
Silicon carbide show larger band gap and excellent in dielectric breakdown property, heat resistance, radiation resistance and the like as compared with silicon. Therefore, silicon carbide powders have been noticed as electronic device materials for portable high output semiconductors and the like, or as optical device materials owing to excellent optical properties, and sintered bodies thereof have been applied to electronic devices and the like.
As the method of producing the above-mentioned silicon carbide powder, there are a plurality of suggestions, however, a method of producing a silicon carbide powder having a content of impurity elements (elements belonging to group I to group XVII elements in the periodic table according to 1989, IUPAC, inorganic chemical nomenclature method, revision, and having an atomic number of 3 or more (excepting a carbon atom, nitrogen atom, oxygen atom and silicon atom)) of 1.0 ppm or less is not known well.
On the other hand, a sintered silicon carbide obtained by using a silicon carbide powder containing significant amount of a nitrogen atom and the like which are not included in the above-mentioned impurity elements can be utilized as an n-type semiconductor, and for designing a semiconductor, it is further required that the sintered silicon carbide forms a p-n junction together with a p-type semiconductor. However, a sintered silicon carbide which can be utilized as the above-mentioned p-type semiconductor is needed to have a small content of a nitrogen atom and the like which are not included in the above-mentioned impurity elements, and such a sintered silicon carbide is required to be produced by using a silicon carbide powder having a small content of a nitrogen atom and the like which are not included in the above-mentioned impurity elements, however, such as silicon carbide powder and a method of producing the same are not known under current conditions.
The present invention has been accomplished in view of such conditions, and a subject thereof is to attain the following object. Namely, an object of the present invention is to provide a sintered silicon carbide which has a small content of the above-mentioned impurity elements, has also a small content of elements such as nitrogen and the like not included in the above-mentioned impurity elements, can be used as a semi-insulator or insulator, and can be suitably used as a p-type semiconductor and the like. Another object of the present invention is to provide a silicon carbide powder suitable for production of the above-mentioned sintered silicon carbide, and a method of producing a silicon carbide powder which can produce the above-mentioned silicon carbide powder efficiently.
The objects of the present invention described above can be achieved by a method of producing a silicon carbide powder comprising sintering a mixture containing at least a silicon source and a carbon source wherein the carbon source is a xylene-based resin.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the silicon source is an alkoxysilane compound.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the alkoxysilane compound is selected from an ethoxysilane oligomer and ethoxysilane polymer.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the mixture is obtained by adding an acid to a silicon source, then, adding to this a carbon source.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the mixture is heated under a non-oxidizing atmosphere of 500 to 1000xc2x0 C. before sintering.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the mixture is prepared by adding a halogen compound in an amount of 0.5 to 5 mass % to the above-mentioned mixture.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein sintering is conducted by heating at a rate of 100 to 1000xc2x0 C./h to 1300 to 1600xc2x0 C., then, heating at a rate of 50 to 300xc2x0 C./h to 1900 to 2100xc2x0 C., then, keeping at 1900 to 2100xc2x0 C. for 180 minutes or less, under a non-oxidizing atmosphere.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the ratio of carbon contained in the carbon source to silicon contained in the silicon source in the mixture is 1.8 or less in sintering.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein a halogen or hydrogen halide is added in an amount of 1 to 5 vol % based on the silicon source and carbon source.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein post-treatment by heating is conducted after sintering.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the post-treatment is conducted at 2150 to 2400xc2x0 C.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the post-treatment is conducted in an argon atmosphere for 3 to 8 hours.
The objects of the present invention described above can also be achieved by a silicon carbide powder produced by the method of producing a silicon carbide powder described above.
The objects of the present invention described above can also be achieved by the silicon carbide powder described above, wherein the nitrogen content is 100 ppm or less.
The objects of the present invention described above can also be achieved by the silicon carbide powder described above, wherein the nitrogen content is 50 ppm or less.
The objects of the present invention described above can also be achieved by the silicon carbide powder described above, wherein the content of impurity elements is 0.3 ppm or less.
The objects of the present invention described above can also be achieved by the silicon carbide powder described above, wherein the volume-average particle size (D50) is 1 to 500 xcexcm.
The objects of the present invention described above can also be achieved by the silicon carbide powder described above, wherein the particle size distribution (D90/D10) is 4 or less.
The objects of the present invention described above can also be achieved by a sintered silicon carbide obtained by sintering the silicon carbide powder described above.
The objects of the present invention described above can also be achieved by the sintered silicon carbide described above, wherein the volume resistivity is 1xc3x97100 xcexa9xc2x7cm or more.
The objects of the present invention described above can also be achieved by the sintered silicon carbide described above, wherein the volume resistivity is 1xc3x97101 xcexa9xc2x7cm or more.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the silicon carbide powder has a nitrogen content of 100 ppm or less.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the silicon carbide powder has a nitrogen content of 50 ppm or less.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the silicon carbide powder has a content of impurity elements of 0.3 ppm or less.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the silicon carbide powder has a volume-average particle size (D50) of 1 to 500 xcexcm.
The objects of the present invention described above can also be achieved by the method of producing a silicon carbide powder described above, wherein the silicon carbide powder has a particle size distribution (D90/D10) of 4 or less.
The objects of the present invention described above can also be achieved by the sintered silicon carbide described above, wherein the nitrogen content is 100 ppm or less.
The objects of the present invention described above can also be achieved by the sintered silicon carbide described above, wherein the nitrogen content is 50 ppm or less.
The objects of the present invention described above can also be achieved by the sintered silicon carbide described above, wherein the content of impurity elements is 0.3 ppm or less.
The present invention can provide a sintered silicon carbide which has a small content of the above-mentioned impurity elements, has also a small content of elements such as nitrogen and the like not included in the above-mentioned impurity elements, can be used as a semi-insulator or insulator, and can be suitably used as a p-type semiconductor and the like. The present invention also can provide a silicon carbide powder suitable for production of the above-mentioned sintered silicon carbide, and a method of producing a silicon carbide powder which can produce the above-mentioned silicon carbide powder efficiently.
The method of producing a silicon carbide powder of the present invention includes at least sintering a mixture containing at least a silicon source and a carbon source, and if necessary, includes other treatments.
xe2x80x94Silicon Sourcexe2x80x94
the above-mentioned silicon source, a silicon compound is mentioned.
The above-mentioned silicon compound may be liquid or solid, and these may be used together, and it is preferable to use at least one in the form of liquid.
As the above-mentioned compound in the form of liquid, alkoxysilane compounds and the like are preferably listed.
As the above-mentioned alkoxysilane compound, for example, alkoxysilanes, alkoxysilane oligomers, alkoxysilane polymers and the like are listed.
The alkoxysilane or alkoxysilane unit in the above-mentioned alkoxysilanes, the above-mentioned alkoxysilane oligomers and the above-mentioned alkoxysilane polymers may be any of monoalkoxysilanes, dialkoxysilanes, trialkoxysilanes and tetraalkoxysilanes, and tetraalkoxysilanes are preferable.
As the above-mentioned alkoxysilane, for example, methoxysilane, ethoxysilane, propoxysilane, butoxysilane and the like are listed, and of then, ethoxysilane is preferable from the standpoint of handling.
The above-mentioned alkoxysilane oligomer is a polymer having lower molecular weight having a degree of polymerization of about 2 to 15, and as the specific examples thereof, a methoxysilane oligomer, ethoxysilane oligomer, propoxysilane oligomer, butoxysilane oligomer and the like are listed, and of them, an ethoxysilane oligomer is preferable from the standpoint of handling.
The above-mentioned alkoxysilane polymer is a polymer having higher molecular weight having a degree of polymerization of over 15, and as the specific examples thereof, a methoxysilane polymer, ethoxysilane polymer, propoxysilane polymer, butoxysilane polymer and the like are listed, and of them, an ethoxysilane polymer is preferable from the standpoint of handling.
As the above-mentioned silicon compound in the form of solid, for example, silicon oxides such as SiO, silica sol (colloidal ultra-fine silica-containing liquid, containing OH group and alkoxyl group inside), silicon dioxides (silica gel, fine silica, quartz powder) and the like are listed.
In the present invention, the above-mentioned silicon compound may be used alone or in combination of two or more, and of the above-mentioned silicon compounds, an ethoxysilane oligomer, an ethoxysilane polymer, a mixture of an ethoxysilane oligomer and fine powdery silica, and the like are preferable owing to excellent uniformity and handling, and an ethoxysilane dimer, ethoxysilane polymer and the like are more preferable.
The above-mentioned silicon compound preferably has high purity, preferably has a content of impurity elements of 20 ppm or less, more preferably of 5 ppm or less.
Here, the above-mentioned impurity element includes elements belonging to group I to group XVI elements in the periodic table according to 1989, IUPAC, inorganic chemical nomenclature method, revision, and having an atomic number of 3 or more (excepting atomic numbers 6 to 8 and 14) (also in the following descriptions).
xe2x80x94Carbon Sourcexe2x80x94
The above-mentioned carbon source is a xylene-based resin. The above-mentioned xylene-based resin has small content of the above-mentioned impurity elements, and nitrogen is scarcely contained in the synthesis process thereof.
As the above-mentioned xylene-based resin, a xylene homopolymer (hereinafter, abbreviated simply as xe2x80x9cxylene polymerxe2x80x9d), xylene copolymer and the like are listed, and a xylene polymer is preferable from the standpoint of mixing of the above-mentioned impurity elements, and a resol type xylene polymer is more preferable.
The above-mentioned xylene-based resin may be appropriately synthesized or commercially available.
The above-mentioned xylene-based resin may be an oligomer or polymer, and the degree of polymerization thereof is not particularly restricted and can be appropriately selected depending on the object, and for example, in the case of the above-mentioned oligomer, the degree of polymerization is preferably from 3 to 15, and in the case of the above-mentioned polymer, the degree of polymerization is preferably from 15 to 1200.
The above-mentioned degree of polymerization can be measured, for example, by general gel permeation chromatography, osmotic pressure method, GC-MS and the like.
The above-mentioned xylene-based resin preferably has high purity, and the content of the above-mentioned impurity elements is preferably 20 ppm or less, and more preferably 5 ppm or less.
xe2x80x94Mixturexe2x80x94
above-mentioned mixture contains the above-mentioned silicon source and the above-mentioned carbon source.
The ratio of the quantity of the above-mentioned silicon source and to the quantity of the above-mentioned carbon source in the above-mentioned mixture is not particularly restricted and can be appropriately selected depending on the object, and it is preferable that the quality ratio of the above-mentioned silicon source to the above-mentioned carbon source is previously determined so that the quality of free carbon in the resulted silicon carbide powder is small.
The amount of the above-mentioned free carbon can be controlled by appropriately regulating the ratio of carbon contained in the above-mentioned carbon source to silicon contained in the above-mentioned silicon source (hereinafter, ref erred to as xe2x80x9cC/Si ratioxe2x80x9d) in the above-mentioned mixture.
Here, the above-mentioned C/Si ratio is represented by the following formula: C/Si=(quantity of the above-mentioned carbon source (g)xc3x97carbon remaining ratio/12.011)/0.4xc3x97(quantity of the above-mentioned silicon source (g)/60.0843)(wherein, the above-mentioned xe2x80x9cquantity of carbon sourcexe2x80x9d means, in the case of the carbon source in the form of solution, the quantity of the above-mentioned carbon source contained in the solution, and the above-mentioned quantity of silicon source means, in the case of the silicon source in the form of solution, the quantity of the above-mentioned silicon source contained in the solution).
The above-mentioned C/Si ratio can be measured by element analysis of a carbide intermediate obtained by carbonization of the above-mentioned mixture at 1000xc2x0 C.
Stoichiometrically, the amount of the above-mentioned free carbon is 0% in a silicon carbide powder obtained when the above-mentioned C/Si ratio is 3.0, and actually, the above-mentioned free carbon may be generated even if the above-mentioned C/Si ratio is small by vaporization of a SiO gas generated simultaneously.
The method of preparing the above-mentioned mixture is not particularly restricted and can be appropriately selected depending on the object, and a method is particularly preferable in which, after addition of an acid to the above-mentioned silicon source, the above-mentioned carbon source is added. In this case, the above-mentioned silicon source and the above-mentioned carbon source can be mixed uniformly, and no generation of phase-separate condition is advantageous.
When, as the method of preparing the above-mentioned mixture, methods other than the method in which, after addition of an acid to the above-mentioned silicon source, the above-mentioned carbon source is added are adopted, the above-mentioned silicon source and the above-mentioned carbon source cannot be mixed uniformly and phase-separate condition may be generated, and in this case, the mixture in the above-mentioned phase-separated condition can be made into a uniform mixture by heating.
The above-mentioned mixture is usually prepared without addition of a halogen compound, and in the case of obtaining a silicon carbide powder having ultra-high purity, the mixture may also be prepared by addition of a halogen compound in an amount of 0.5 to 5 mass % based on the mixture.
When the above-mentioned halogen compound is added to the above-mentioned mixture, the above-mentioned impurity element mixed in the mixtures is halogenated and vaporizes and splashes by the following sintering, to be removed effectively, consequently obtaining a silicon carbide powder of ultra-high purity. Specifically, by adding the above-mentioned halogen compound, each content of the above-mentioned impurity elements in the resulted silicon carbide powder can be controlled to 0.1 ppm or less.
When the above-mentioned halogen compound is added, it is preferable to react the above-mentioned mixture near the decomposition temperature of the added halogen compound for 10 to 30 minutes and to heat the mixture to the temperature for the next sintering, from the standpoint of removal of the above-mentioned impurity element.
Regarding the above-mentioned halogen compound, when the above-mentioned is liquid, a liquid halogen compound such as ammonium chloride, hydrochloric acid aqueous solution and the like is preferably added to the mixture, and when the above-mentioned is solid (when a thermoplastic phenol resin, furan resin or the like is contained as the above-mentioned carbon source, and a solid compound is contained as the above-mentioned silicon source), a solid halogen compound such as a halogen-containing polymer such as polyvinyl chloride, chlorinated polyethylene, polychloroprene and the like is preferably added to the mixture.
The above-mentioned mixture may be solid or liquid, and in the case of liquid, the mixture may be hardened, before the above-mentioned sintering, to give a solid product.
The above-mentioned hardening method is not particularly restricted, and can be appropriately selected depending on the object, and for example, a method of cross-linking by heating, a method of hardening with a hardening catalyst, methods using electronic beam and radiation, and the like are listed.
The above-mentioned heating is conducted at temperatures of about 50xc2x0 C. or more for about 1 hour or more.
The above-mentioned hardening catalyst is not particularly restricted and can be appropriately selected depending on the object, and for example, acids such as toluenesulfonic acid, toluenecarboxylic acid, acetic acid, oxalic acid, hydrochloric acid, sulfuric acid and the like, amines such as hexamine and the like, are listed.
The above-mentioned mixture is preferably heated at 500 to 1000xc2x0 C. under a non-oxidizing atmosphere before the above-mentioned sintering, and more preferably heated at 500 to 600xc2x0 C. under a non-oxidizing atmosphere for 10 to 30 minutes, then, heated at 800 to 1000xc2x0 C. under a non-oxidizing atmosphere for 30 minutes to 2 hours.
The above-mentioned non-oxidizing atmosphere is not particularly restricted and can be appropriately selected depending on the object, and for example, atmospheres of nitrogen, argon and the like are listed.
xe2x80x94Sinteringxe2x80x94
The above-mentioned sintering is not particularly restricted in method, conditions and the like thereof, and can be appropriately selected depending on the particle size of the intended silicon carbide powder, and the like, and from the standpoint of more efficient production of a silicon carbide powder, it is preferable that the above-mentioned mixture is heated, under a non-oxidizing atmosphere, at a rate of 100 to 1000xc2x0 C./h to 1300 to 1600xc2x0 C., then, heated at a rate of 50 to 300xc2x0 C./h to 1900 to 2100xc2x0 C., then, kept at 1900 to 2100xc2x0 C. for 180 minutes or shorter.
In the above-mentioned sintering, it is preferable that the temperature rising rate in heating to 1300 to 1600xc2x0 C. is larger than the temperature rising rate in heating to 1900 to 2100xc2x0 C.
By heating the above-mentioned mixture to 1900 to 2100xc2x0 C., a carbide of silicon and carbon is obtained. In this case, the yield of the above-mentioned carbide based on the above-mentioned mixture is not particularly restricted, and higher is more preferable, and this yield is preferably 50 mass % or more.
The above-mentioned non-oxidizing atmosphere is not particularly restricted and can be appropriately selected depending on the object, and for example, atmospheres of inert gases such as nitrogen, argon and the like are listed, and an argon atmosphere is preferable since it is non-reactive even at higher temperature.
In the above-mentioned sintering, it is preferable to introduce the above-mentioned inert gas into a reaction vessel accommodating the above-mentioned mixture. This case is advantageous since a SiO gas, CO gas and the like containing the above-mentioned impurity elements generating in the above-mentioned sintering can be discharged or removed out of the above-mentioned reaction vessel.
In the above-mentioned sintering, addition of a halogen or hydrogen halide in an amount of 1 to 5 vol % based on the above-mentioned silicon source and the above-mentioned carbon source is preferable since then the quantity of the above-mentioned impurity elements contained in the resulted silicon carbide powder can be controlled.
The above-mentioned C/Si ratio in the above-mentioned sintering cannot be generically defined since it can vary depending on the pressure in the above-mentioned sintering, and is preferably 1.85 or less, more preferably 1.55 or less sine then generation of the above-mentioned free carbon can be suppressed effectively.
xe2x80x94Other Treatmentxe2x80x94
The above-mentioned other treatment is not particularly restricted and can be appropriately selected depending on the object, and for example, the following post-treatment and the like are preferably listed.
The above-mentioned post-treatment is conducted, after the above-mentioned sintering, preferably at 2000xc2x0 C. or more, more preferably at 2100xc2x0 C. or more, particularly preferably at 2150 to 2400xc2x0 C.
The time of the above-mentioned post-treatment is not particularly restricted and can be appropriately selected depending on the object, and usually 5 minutes or more, preferably from about 3 to 8 hours, more preferably from about 4 to 6 hours.
The above-mentioned post-treatment is preferably conducted under the above-mentioned non-oxidizing atmosphere, and among the non-oxidizing atmospheres, an argon atmosphere is preferable since it is non-reactive even at high temperature.
The above-mentioned post-treatment is advantageous in that the above-mentioned impurity elements are removed, purity is high, particle size is large, particle size distribution is narrow, and a silicon carbide powder of high quality is obtained.
The apparatus and the like used in the method of producing the above-mentioned silicon carbide powder is not particularly restricted and can be appropriately selected depending on the object.
The method of producing the above-mentioned silicon carbide powder may be conducted in continuous mode or batch-wise mode. Further, the above-mentioned sintering and the above-mentioned post-treatment may be conducted continuously in one heating furnace, or conducted batch-wise in separate heating furnaces.
(Silicon Carbide Powder)
The silicon carbide powder of the present invention is produced by the above-mentioned method of producing a silicon carbide powder of the present invention.
The above-mentioned silicon carbide powder contains xcex2-SiC in an amount preferably of 70 mass % or more, more preferably of 80 mass % or more, in view of isotropy of electric conduction, isotropy of heat conduction and the like.
Whether this xcex2-SiC or not can be judged from matching peak in ATSM library data, and the like.
The volume-average particle size (D50) of the above-mentioned silicon carbide powder is preferably from 1 to 500 xcexcm, more preferably from 1 to 10 xcexcm.
It is advantage that the above-mentioned volume-average particle size (D50) is within the above-mentioned numerical value range since then handling thereof is easy and packing in molding is dense and successful, when applied to a sintered silicon carbide.
The particle size distribution (D90/D10) (based on volume-average particle size) of the above-mentioned silicon carbide powder is preferably 4.0 or less, more preferably 3.5 or less from the standpoint of uniformity of the above-mentioned silicon carbide powder.
Each content of the above-mentioned elements in the above-mentioned silicon carbide powder is preferably 0.3 ppm or less, more preferably 0.1 ppm or less.
The nitrogen content in the above-mentioned silicon carbide powder is preferably 100 ppm or less, more preferably 50 ppm or less, particularly preferably 40 ppm or less.
In this case, when the silicon carbide powder is sintered, a sintered silicon carbide which is a semi-insulator or insulator is obtained, and the sintered silicon carbide can be suitably utilized as a p-type semiconductor and the like, advantageously.
The above-mentioned can be measured, for example, using an oxygen and nitrogen simultaneous analysis apparatus and the like.
The silicon carbide powder of the present invention has high purity, large particle size and narrow particle size distribution, therefore, it can be suitably used in various fields, and particularly suitably applied to the sintered silicon carbide of the present invention.
(Sintered Silicon Carbide)
The sintered silicon carbide of the present invention is obtained by sintering the above-mentioned silicon carbide powder of the present invention.
The above-mentioned sintering method is not particularly restricted and can be appropriately selected depending on the object, and for example, it may be a reactive sintering method or hot press method, and sintering conditions and the like can be appropriately selected depending on the object.
The volume resistivity of the above-mentioned sintered silicon carbide is preferably 1xc3x97100 xcexa9xc2x7cm or more, more preferably 1xc3x97101 xcexa9xc2x7cm or more.
When the above-mentioned volume resistivity is 1xc3x97100 xcexa9xc2x7cm or more, the above-mentioned sintered silicon carbide is semi-insulating or insulating.
The bending strength of the above-mentioned sintered silicon carbide differs depending on application and the like, and generally, the value measured according to the bending strength test method (JIS 1601) is preferably 600 MPa or more, and more preferably 650 MPa or more.
The heat conductivity of the above-mentioned sintered silicon carbide differs depending on application and the like, and generally, preferably 100 W/mxc2x7K or more, more preferably 180 W/mxc2x7K or more.
The above-mentioned heat conductivity can be measured by a laser flash method using a heat constant measuring apparatus (FA8510B, manufactured by Rigaku Denki K.K.).
The density of the above-mentioned sintered silicon carbide differs depending on application and the like, and generally, preferably 2.9 g/cm3 or more, more preferably 3.0 g/cm3 or more.
When the above-mentioned density is less than 2.9 g/cm3, mechanical strength decreases, and when used repeatedly, deformation, and failures such as crack and the like may be caused. Further, heat resistance, oxidation resistance and chemical resistance also decrease, leading to a tendency of corrosion in some cases.
The above-mentioned can be measured by an Archimedes"" method.
The surface roughness (Ra) of the above-mentioned sintered silicon carbide differs depending on application and the like, and generally, preferably from 0.01 to 2.0 xcexcm.
When the surface roughness (Ra) is within the above-mentioned range, generation of particles can be further prevented, desirably.
The surface roughness (Ra) can be measured using a surface roughness meter.
The content of xcex2-SiC in the above-mentioned sintered silicon carbide differs depending on application and the like, and in general, preferably 70 mass % or more, more preferably 80 mass % or more based on the silicon carbide all components, from the standpoint of enhancement of isotropy of mechanical strength, and the like.
The Young""s modulus the above-mentioned sintered silicon carbide differs depending on application and the like, and in general, preferably from 3.5xc3x97104 to 4.5xc3x97104 kgf/mm2 (3.4xc3x97105 to 4.4xc3x97105 MPa).
The Vickers hardness of the above-mentioned sintered silicon carbide differs depending on application and the like, and in general, preferably 2000 kgf/mm2 (18000 to 20000 MPa) or more.
The Poisson""s ratio of the above-mentioned sintered silicon carbide differs depending on application and the like, and in general, preferably from 0.14 to 0.21.
The thermal expansion coefficient of the above-mentioned sintered silicon carbide differs depending on application and the like, and in general, preferably from 3.8xc3x9710xe2x88x926 to 4.2xc3x9710xe2x88x926/K.
The specific feat of the above-mentioned sintered silicon carbide differs depending on application and the like, and in general, preferably from 0.15 to 0.18 cal/gxc2x7K.
The total content of the above-mentioned impurity elements of the above-mentioned sintered silicon carbide is preferably 1.0 ppm or less, more preferably 0.8 ppm or less.
When the total content of the above-mentioned impurity elements is 1.0 ppm or less, the sintered silicon carbide can be suitably used as a high performance wafer in various fields.
The content of the above-mentioned impurity elements can be measured by analysis by ICP-MS of a solution obtained by decomposition of all of the above-mentioned sintered silicon carbide with a strong acid.
The sintered silicon carbide of the present invention has a small content of the above-mentioned impurity elements and also has a small content of elements such as nitrogen and the like not included in the above-mentioned impurity elements, and can be used widely in various fields as a semi-insulator or insulator, and can be used particularly suitably as a p-type semiconductor and the like.

Silicon carbide powder and method for producing the same


An electronic package includes a printed wiring board (PWB) having a die-receiving cavity therein, a semiconductor die in the die-receiving cavity and coupled to the PWB, and a lid mating ring at an upper surface of the PWB surrounding the die-receiving cavity. The lid mating ring has spaced apart pillar-receiving openings therein. A lid is coupled to the lid mating ring and covers the semiconductor die within the die-receiving cavity. The lid includes a liquid crystal polymer (LCP) layer, and spaced apart pillars extending downwardly from a lower surface of the LCP layer and received in corresponding ones of the spaced apart pillar-receiving openings.

The basic purpose of packaging electronic components is to protect the components while at the same time providing electrical interconnections from the components through the package. Manufacturability and protection are key concerns. Due to ongoing market demand, electronic packages are continuously being driven toward smaller sizes and reduced footprints while still being environmentally robust. Even though these electronic packages are miniaturized they are still highly functional.
Miniaturization for active components may be achieved through the use of a semiconductor die with as little packaging as possible. One approach for miniaturization is based on a packaged surface mount device which includes a protective structure. Environmental protection from moisture and dust is one potential benefit when using this protective structure approach, even though the protective structure enclosing the semiconductor die may have a relatively high thickness (up to 1-2 mm) above the printed wiring board (PWB). A packaged surface mount device also allows an air gap or air bridge to exist between the semiconductor die and the package, which may be helpful when the semiconductor die is a radio frequency (RF) integrated circuit. The width of the protective structure for the packaged surface mount device may be upwards of 2× the footprint of the actual semiconductor die, for example.
For the same semiconductor die used in the packaged surface mount device, miniaturization may be further achieved using a packaged chip-on-board approach. The semiconductor die in the packaged chip-on-board approach is mechanically secured directly to the PWB with an adhesive and electrically interconnected via wire-bond connections. Instead of the protective structure, environmental protection is achieved by placing an epoxy glob over the semiconductor die. A width of a packaged chip-on-board setup may be upwards of 1.5× the footprint of the actual semiconductor die, for example. Yet a further reduction may be achieved when the semiconductor die is mounted to the PWB via flip-chip connections. Here, a width of the flip-chip approach may be between 1× to 1.25× the footprint of the bare die depending on the underfill fillet size.
Consequently, tradeoffs exist between providing environmental robustness and usability of the semiconductor die, particularly when placed in a mobile electronic device, for example. Component lid technologies can be used to provide environmental robustness for a semiconductor die. However, the resulting lids may be relatively thick due to molding technologies currently available, and the sealing methods are moderately inconvenient since they use relatively long epoxy cure times. An alternative to injection molding is to use a lid comprising a liquid crystal polymer (LCP) material. LCP materials have very low moisture permeability and can provide a near-hermetic seal while maintaining a thin profile.
An LCP lid for protecting a semiconductor die is disclosed in the article titled "Packaging of MMICs in Multilayer LCP Substrates" by Thompson et al. As illustrated in FIG. 1, the electronic package 10 includes a multilayered LCP lid 12 placed over an active semiconductor die 14 embedded within a cavity 15. The illustrated LCP lid 12 is about 10 mils thick and has a significantly lower profile as compared to an injection molded lid. The LCP lid 12 is laminated with the underlying layers 16, 17, 18, 19 which are also an LCP material. As discussed in the article, low melting temperature LCP layers (285° C.) are used to adhere generally thicker higher melting temperature core layers (315° C.) to create a homogeneous LCP electronic package. Nonetheless, there is still a need to improve upon component lid technologies for protecting semiconductor dies.

Low profile electronic package and associated methods


A neutral point detection device is applied to a steering control system that obtains a steering angle of a steering device of a vehicle as a detection value by a steering angle sensor, and controls the steering device by means of the detection value. The neutral point detection device includes a straight determination unit that determines whether a road on which the vehicle is traveling is straight, a straight traveling determination unit that determines whether the vehicle is travelling straight along the road, a steering angle acquisition unit that obtains the detection value of the steering angle sensor, and a detection unit that detects the neutral point of the steering angle sensor based on the detection value obtained by the steering angle acquisition unit, when the straight determination unit determines that the road is straight and the straight traveling determination unit determines that the vehicle is traveling straight along the road.

Known lane departure prevention control detects travel section lines that are marked on a road, and controls a steering device such as to prevent a vehicle from departing from its traffic lane. With this control, in order to control the vehicle to follow curvature of the road, a steering angle sensor detects the steering angle of the steering device of the vehicle, and feedback control is executed to bring the steering angle to a target value.
In executing such feedback control, a deviation of the neutral point of the steering angle sensor, i.e. a deviation of a detected value of the steering angle may make the actual steering angle become excessively large or become excessively small in relation to the curvature of the road.
A neutral point learning device described in PTL 1 has been proposed as a solution for this issue. With the neutral point learning device of PTL 1, when detection values from the yaw rate sensor indicate that the vehicle is traveling along a straight line, the detected value of the steering angle is taken as the neutral point of the steering angle sensor.

Neutral point detection device and steering control system


Examples are disclosed for identifying duplicated media content in a plurality of media files. In some examples, according to a media file format, media content sequences may be located and duplicated media content sequences identified. For these examples, at least a portion of the identified duplicated media content sequences may then be deleted or not stored at a storage system. Other examples are described and claimed.

With the proliferation of smart devices, surveillance gadgets and other types of media capture devices, media content creation is growing at an exponential pace. This, in turn, leads to a corresponding increase in an amount of media content stored in public clouds/repositories such as YouTube™, Dropbox™, etc. Furthermore, professionally created media content like movies, television shows, documentaries, etc. stored in subscription-based media content repositories may be accessed or consumed via on-line streaming by media content providers such as Netflix™, Hulu™ or Comcast™. Often, multiple copies of the same media content that primarily includes video but may also include associated audio or text may be stored at a given media content repository.

This patent is subject to a terminal disclaimer.

Techniques for deduplication of media content


A gate driver circuit applicable to an inductive load, an inverter module, and an inverter apparatus are provided. The gate driver circuit includes a high side driver having a first output side and a first control side and generating a high side gate signal; and a low side driver generating a low side gate signal, wherein the high side driver includes a first VS pad formed on the first output side; a first output pad formed on the first output side, a first VB pad formed on the first control side; and a second VB pad formed to be adjacent to the first VB pad on the first control side and electrically connected to the first VS pad; and a first circuit unit connected to the plurality of pads to provide the high side gate signal through the first output pad.

1. Field of the Invention
The present invention relates to a gate driver circuit applicable to an inductive load such as a motor, or the like, an inverter module, and an inverter apparatus.
2. Description of the Related Art
In general, in order to supply a driving signal to an inductive load used in an electric product such as an electric vehicle, or the like, an inverter converting a DC voltage into an AC voltage may be used, and in order to drive the inverter, a gate driver generating a gate signal is required. Here, the inductive load may include a motor, a heating coil, and the like.
In general, an inverter includes a high side switch and a low side switch to generate an AC voltage. The high side switch and the low side switch are complementarily switched in each phase, and an insulated gate bipolar transistor (IGBT) element may be used as the high side switch and the low side switch.
The gate driver includes a high side driver IC (e.g., high voltage integrated circuit (HVIC)) for driving the high side switch and a low side driver IC (e.g., low voltage integrated circuit (LVIC)) for driving the low side switch.
The inverter and the gate driver may be configured as an IC, respectively, and manufactured as a single inverter module, and a pad of the gate driver and a pad of the inverter may be connected through a wire or a lead frame. Such an inverter module may be mounted on a printed circuit board (PCB) to form a PCB board assembly (PBA).
When a PBA is designed by using an inverter power module (hereinafter referred to as an 'inverter module'), the following matters should be taken into consideration. First, in order to drive a high side IGBT operable at a high voltage, a potential difference greater than an emitter terminal by an amount equal to a turn-on voltage should be made between a gate terminal and the emitter terminal of the high side IGBT. Also, when a low voltage (e.g., 0V) is applied to the emitter terminal (connected to a VS terminal), a turn-on voltage may be applied to the gate terminal (connected to an H0 terminal and a VB terminal), but when a high voltage (e.g., 300V) is applied to the emitter terminal, a voltage (e.g., 300V+ turn-on voltage) higher than the high voltage by an amount equal to the turn-on voltage should be applied. To this end, a bootstrap capacitor is required between the VB terminal and the VS terminal of the high side driver IC (i.e., HVIC).
Here, however, the VB terminal and the VS terminal are formed on the opposing sides, so in order to connect the bootstrap between the two terminals, a line connected to the VB terminal is required to be formed up to the VB terminal formed on the opposite side to connect the bootstrap capacitor, complicating a PCB design and increasing the size of the PCB.
Thus, a lead frame of the inverter module or a pattern on a substrate are lengthened and complicated, and since a space between the substrate and the board is increased, the design of the substrate is complicated, and due to the complicated lead frame and pattern, noise is highly likely to be introduced.
Patent document 1, the Prior art document below, relates to an inverter driving apparatus for controlling a behavior of a brushless DC (BLDC) motor applied to an electric vehicle using a 42V power system. However, this document does not disclose technical matters regarding an addition of a VS pad in designing a high side driver (i.e., an HVIC) aimed at simply manufacturing a PCB or technical matters regarding positions in which an added VS pad and VB pad are formed.

Gate driver circuit for inductive load, inverter module, and inverter apparatus having the same


A gasket for use with a connector assembly apt to allow the sealed passage of a fluid through a wall (P) and suitable for installation realized from just one side of the wall, which gasket has a deformable region is provided. The gasket is configured to assume an installation configuration, in which the gasket can be introduced into a connector seat (D) formed in the wall (P), crossing it from side to side, and a sealing configuration, wherein the gasket is installed in the wall (P) and deformed, at the deformable region, to abut on an inside mouthpiece of the connector seat.

In the hydraulics field, there is often a need to place two environments separated by a wall in communication with one another so as to allow the sealed passage of a fluid through said wall. This is achieved for example when it is desired to connect the internal compartment of a tank to an external pipe.
The above-mentioned hydraulic communication is stabilized by forming an appropriate seat in the wall and by installing a connector assembly in said seat.
The connector assemblies used traditionally comprise a tubular connection element, commonly referred to as a "tank connector", having one or more externally threaded portions. The aforementioned assemblies also comprise two ring nuts for locking the tank connector from opposite sides of the wall. This locking involves the interpositioning of an annular gasket between each ring nut and the wall.
In order to install a connector assembly of this kind, it is necessary to firstly insert the tank connector through the connection seat. To this end, the connection seat has a passage opening of transverse dimensions equal to or slightly greater than those of the tank connector itself, but smaller than the transverse dimensions of the two ring nuts. Thus, each ring nut is screwed to the tank connector until the relative gasket is clamped against the corresponding face of the wall.
The above-described connector assemblies from the prior art have some significant disadvantages. The primary disadvantage lies in the fact that the procedure for installing the assembly requires the two ring nuts and the relative gaskets to be inserted on the tank connector from opposite sides of the wall. Thus, such installation generally requires two workers, each handling one ring nut. In addition, in the case of installation of the assembly on a tank, the above-mentioned technique requires a worker to bring their arm inside the tank itself in order to install the internal ring nut. However, this is often very difficult insofar as the tanks frequently have an entry mouthpiece of reduced dimensions and are of a significant height.
Document EP 1 301 739 describes a deformable gasket for overcoming the above-mentioned disadvantages.
A further difficulty generally encountered with the known connector assemblies and gaskets is that of correctly centering the gasket or gaskets on the cylindrical body of the connector, particularly when such gaskets have a complex form.
Yet a further disadvantage associated with the known deformable gaskets is that they do not guarantee a correct and foreseeable deformation of the gasket under various working conditions, particularly when the gasket itself has a complex form.

Deformable gasket for the sealed passage of a fluid through a wall


A spacecraft incorporating momentum sources such as spinning momentum wheels having momentum vectors or components thereof oriented along the desired axis of rotation of the spacecraft. The rotation axis of the spacecraft is nominally any one of the three principal moment of inertia axes of the body. Proper adjustment of the spin rate of the main body relative to the magnitude of the moment sources angular momentum will insure that the spacecraft will spin about the desired axis in a passively stable way even though the rotational axis is not the principal axis of maximum moment of inertia.

1. Field of the Invention
This invention relates to a system for stabilizing a spinning spacecraft exposed to destabilizing moments and/or possessing unfavorable mass properties.
2. Description of Related Art
Spin stabilization is the simplest technique for controlling spacecraft attitude for orbiting spacecraft during the launch and orbit injection phases, and the on-station orbiting phase. A spacecraft (or any other generally rigid body) can be characterized as having three principal moment of inertia axes which typically each have a unique moment of inertia value, thus defining a maximum axis, a minimum axis, and an intermediate axis. A continuing problem in spacecraft design is to insure spacecraft stability during rotation. In order to provide stability, spacecraft are spun about either a maximum principal axis which is preferred because it is passively stable, or their minimum principal axis, which provides stability if used with active nutation control systems. Rotation about the intermediate axis is inherently unstable and requires a continuous active thruster control system. Since design constraints in spacecraft design often result in spin being preferred about the intermediate or minimum axes, some form of nutation control system is ordinarily required Such systems, however, add complexity, cost and weight to the spacecraft.
In view of the foregoing, there is a need to provide a simplified spacecraft stabilization system permitting rotation about moment of inertia axes other than the maximum moment of inertia axis in a passively stable manner.

Spin stabilization via momentum wheels or similar devices


A lotion dispenser-applicator enables lotion to be applied to hard-to-reach parts of the body. The lotion dispenser-applicator contains an elongated handle for holding lotion, a planar face with a slot at the upper end of the handle, a porous pad covering the face with a void extending from the slot, a displacement pump at the upper end of the handle, a dip tube, and a dispensing spout. The distal end of the spout extends into the void of the pad. An orifice in the distal end of the spout is directed to dispense lotion not the exterior surface of the pad from which is it applied to the body.

A wide variety of lotions are applied to the body, including soaps, moisturizers, creams, sunscreens, gels, and the like. The term "lotion" is used herein to refer to fluids that are considerably thicker and more viscous than water. These lotions are frequently packaged in containers that include a displacement pump as a dispenser. A displacement pump features a spring-biased reciprocating head with a dip tube. When the head is depressed, the volume of the internal chamber of the pump is decreased and a corresponding volume of lotion is dispensed. When the head is released, the internal volume of the pump is increased and a corresponding volume of lotion is drawn into the dip tube.
Lotions are frequently applied to the body by hand. However, the middle of the back is very difficult for most people to reach with their own hands. Persons having physical disabilities can have difficulty reaching additional body parts. Lotion or soap dispenser-applicators having elongated handles have been produced. For example, a body cream applicator/massager is sold by Solutions of Portland, Oreg. The device contains a reservoir in the head that can be filled with the desired lotion. The amount of lotion that flows out of the device is not easily controlled. A soap dispensing kitchen brush is sold by OXO International of New York, N.Y. The device contains a reservoir in the handle. A button is pressed to dispense the liquid soap through bristles of the brush.
Two combined lotion dispenser-applicators having elongated handles with reservoirs have been disclosed in the patent literature. Yannaci et al., U.S. Pat. No. 6,210,057, Apr. 3, 2001, discloses a lotion dispenser-applicator that contains a reservoir in a portion of the handle. The lotion in the reservoir is forced to the applicator by a sliding, piston-like movement of a portion of the handle. Owings, U.S. Pat. Appln. Publn No. 2002/0018687, Feb. 14, 2002, also discloses a lotion dispenser-applicator that contains a reservoir in a portion of the handle. The lotion is forced to the applicator by squeezing a bulb. The Yannaci et al. and the Owings devices hold relatively small quantities of lotion and dispense variable amounts of lotion. Both devices force the lotion onto the interior surface of the applicator. The lotion then flows through the applicator to the exterior surface where it is applied to the body.
A variety of devices have been disclosed for dispensing and applying aqueous solutions and relatively low viscosity lotions using a porous pad made of cotton, sponge, synthetic foam, or the like. These devices fall into two general types.
The first type of device contains a nozzle or dispenser that applies the fluid to the interior surface of an integral pad. The fluid flows through the pad to the exterior surface. The pad is then rubbed onto the surface to be treated. Examples of this type of device include Hoxie, U.S. Pat. No. 3,184,781, May 25, 1965; Breer II, U.S. Pat. No. 4,004,854, Jan. 25, 1977; Tice, U.S. Pat. No. 4,889,441, Dec. 26, 1989; Buschemeyer, U.S. Pat. No. 4,902,155, Feb. 20, 1990; Goncalves, U.S. Pat. No. 5,018,894, May 28, 1991; Fontanet et al., U.S. Pat. Appln. Publn. No. 2002/0071708, Jun. 13, 2002; and Eadie, U.S. Pat. Appln. Publn. No. 2003/0031501, Feb. 13, 2003. The Yannaci et al. and Owings devices discussed above are similar to this type of device. These devices are not suited for dispensing thick fluids with dense pads because a thick fluid cannot penetrate (flow through) a dense pad.
The second type of device contains a nozzle that sprays the fluid onto the surface to be treated (the body, a surface to be cleaned, etc.) when a trigger is pulled. The device contains an integral pad that is perpendicular to the direction the fluid is sprayed. The pad is then used to rub the liquid on the surface. Examples of this second type of device include Schultz et al., U.S. Pat. No. 6,742,951, Jun. 1, 2004; and Beard, U.S. Pat. Appln. Publn. No. 2004/0101347, May 27, 2004. These devices are not suited for applying a fluid to a hard-to-reach part of the body because the nozzle must be positioned adjacent the surface and then the trigger must be pulled.
None of the prior art devices holds a large quantity of thick lotion, dispenses a controlled amount of the lotion with a displacement pump, and dispenses the lotion directly onto the exterior surface of a pad. Accordingly, a demand exists for an improved lotion dispenser-applicator that holds a greater quantity of lotion, that dispenses a controlled amount of lotion with a displacement pump, and that dispenses the lotion directly onto the exterior surface of a pad.


A coffee cooking stand according to the present invention basically includes a stand having at least one stand base, at least one stand column and at least one stand upper wall, and at least one basket placed on the stand upper wall or on the stand base.

Together with the developments in coffee culture and consumption lately, novel brewing methods and devices have been developed and invented. The invention of novel methods and devices promises opportunities for consumers to brew more tasty coffees. At the same time, scientific researches seek ways to find out the best taste characteristics of coffee, ranging from agriculture and processing to roasting, preparation and the presentation of coffee. All these efforts and developments provide the users and consumers with the possibility to take better control of the variables of preferred brewing methods and consequently to have a more tasteful and pleasant coffee experience.
Different brewing methods require different main and auxiliary brewing devices. However, any new coffee equipment requires extra space and constitutes extra cost for home users who are to prepare coffee using different brewing methods and devices, as well as for commercial establishments such as coffeehouses, restaurants and hotels which are to offer different coffee alternatives to their guests or clients.
Tens of different coffee stands are available, which are used for manual filter coffee brewing methods and are aiming at providing different advantages by controlling the variables of the method in different aspects. However, since they are designed for a single brewing method, they do not operate in compliance with different brewing methods and equipment. They are not expected to be easily portable as they are intended for a single-purpose use. The available stands do not provide an ease of use in indoors and outdoors. On the other hand, since the stands are produced from different materials with visual design concerns (e.g. wood, copper, glass etc.), the durability and the service life of the resulting products are influenced negatively.
No multi-purpose stand design has been encountered in the prior art, which is designed for cooking and brewing coffee, particularly Turkish coffee. Those which have been encountered are generally designs for Turkish coffee pots or cups, as well as coffee cookers or coffee brewing machines in terms of devices.
In the U.S. Pat. No. 7,858,133 according to the prior art is described a coffee machine. It is seen that said coffee machine has a stand-shaped leg. However, said leg appears to be peculiar only to said machine and to function as a support and heater that works together with the body of that machine.
Another patent document according to the prior art is the US patent document US2008179935. Said patent document describes a leg mechanism to be used in furniture and it appears that it is rather designed for use in serving bear and similar beverages.
A further patent document according to the prior art is the U.S. Pat. No. 6,330,849. Said patent document is related to an electrical tea or coffee machine. A stand described in said patent document is used to heat a tea cup or coffee cup (teapot) and to brew the same, and has a cup holder at an upper side thereof.
Another patent document according to the prior art is the US patent document US2005258318. In said patent document is described a hook designed to provide the possibility of placing a tea cup or coffee cup beneath the hook so that something that is hanging from said hook can be inserted into the cup.


An implantable prosthesis is provided for repairing or augmenting anatomical weaknesses or defects, and is particularly suitable for the repair of soft tissue and muscle wall openings. The prosthesis is configured to promote enhanced tissue ingrowth thereto, while limiting the incidence of post-operative adhesions between the fabric and tissue or organs. The prosthesis may include a layer of fabric that is constructed and arranged to allow tissue ingrowth and is susceptible to the formation of adhesions for tissue and organs. One or more barriers may be provided on selected portions of the fabric to inhibit the formation of adhesions with tissues and organs. The prosthesis may have an opening that is adapted to receive the esophagus or other tube-like structure, or other projection, that passes through an opening in or projects from a tissue, muscle or organ wall requiring repair and/or augmentation. The prosthesis may be configured for use in hiatal hernia repair and/or treatment of GERD. A method is also provided for the treatment of GERD.

The present invention relates to an implantable prosthesis, and more particularly to a prosthetic repair fabric for use in soft tissue repair and reconstruction.
Gastroesophageal reflux disease (xe2x80x9cGERDxe2x80x9d) and hiatal hernia commonly occur together. A hiatal hernia occurs when a natural opening, or xe2x80x9chiatus,xe2x80x9d in the diaphragm through which the esophagus extends, becomes enlarged, allowing the stomach to pass through the hiatus into the thoracic cavity. GERD indicates a backflow of acid from the stomach into the esophagus. Although GERD may be an independent affliction, GERD is often a symptom of, or a co-affliction with, a hiatal hernia. Representative surgical treatments for GERD and/or hiatal hernia may include one or more of the following: a fundoplication, more specifically an open or laparoscopic Nissen fundoplication, where part of the fundus of the stomach is wrapped around the lower end of the esophagus to recreate or augment the lower esophageal sphincter (LES); a cruroplasty, which involves tightening the crura of the diaphragm around the esophagus; and an endoscopic gastroplication where pleats are formed within the esophagus at or near the LES, reducing the size of the internal diameter of the lower esophagus.
It has been known to use a prosthetic repair fabric in the surgical treatment of GERD and/or hiatal hernia. Typically, a sheet of surgical mesh fabric, such as BARD MESH, commercially available in rectangular stock sheets, is custom fashioned by a surgeon into a shape suitable for a particular patient""s hiatal repair, such as a rectangular or oval shape. The surgeon forms a keyhole opening in the patch by cutting a slit from one edge of the implant and then forming an opening at the end of the slit that is large enough to receive the esophagus. The adjacent flaps of mesh formed by the slit running through the edge, known as xe2x80x9ctailsxe2x80x9d or xe2x80x9cfinsxe2x80x9d, may be stitched together after the esophagus has been positioned in the keyhole opening, recreating a hiatal ring about the esophagus to help prevent the stomach from reentering the thoracic cavity.
It is one object of certain embodiments of the present invention to provide a preformed prosthesis for the treatment of GERD and/or the repair of hiatal hernias.
It is another object of certain embodiments of the present invention to provide a prosthesis for the treatment of GERD and/or the repair of hiatal hernias that reduces the incidence of postoperative adhesions to the esophagus, stomach and/or other surrounding viscera.
It is a further object of certain embodiments of the present invention to provide methods of treating GERD and/or repairing hiatal hernias.
In one embodiment of the invention, an implantable prosthesis is provided for repairing a tissue or muscle wall defect located near the esophagus. The implantable prosthesis comprises a layer of repair fabric that is susceptible to the formation of adhesions with tissue and organs, a surface barrier that inhibits the formation of adhesions with tissue and organs, and at least one edge barrier that inhibits the formation of adhesions with tissue and organs. The layer of repair fabric includes first and second surfaces and at least one fabric edge extending from the first surface to the second surface. The first surface is adapted to face the tissue or muscle wall defect when the implantable prosthesis is placed in a patient near the esophagus, and the second surface is adapted to face away from the tissue or muscle wall defect and toward the patient""s cavity viscera. The layer of repair fabric has an opening that is adapted to receive the esophagus. The surface barrier is disposed on at least a portion of the second surface of the layer of repair fabric to inhibit the formation of adhesions between the portion of the second surface and adjacent tissue and organs when the implantable prosthesis is placed in the patient. The at least one edge barrier extends about at least a portion of the at least one fabric edge to inhibit the formation of adhesions between the portion of the at least one fabric edge and adjacent tissue and organs.
In another embodiment of the invention, an implantable prosthesis is provided for repairing a tissue or muscle wall defect located near a tube-like structure. The implantable prosthesis comprises a body portion that is constructed and arranged to be placed proximate the tissue or muscle wall defect, and includes an outer periphery and has an opening that is adapted to receive the tube-like structure. The body portion comprises a layer of repair fabric that is susceptible to the formation of adhesions with tissue and organs, and a surface barrier that inhibits the formation of adhesions. The layer of repair fabric includes first and second surfaces and at least one fabric edge extending from the first surface to the second surface. The first surface is adapted to face the tissue or muscle wall defect when the implantable prosthesis is placed in a patient near the tube-like structure. The layer of repair fabric has a first slit extending from the opening to the outer periphery to receive the tube-like structure in the opening. The surface barrier is disposed at the second surface of the layer of repair fabric to inhibit the formation of adhesions on the second surface when the implantable prosthesis is placed in the patient. The surface barrier has a second slit extending from the opening to the outer periphery to receive the tube-like structure in the opening. The second slit is offset from the first slit, such that the second slit overlies a portion of the layer of repair fabric and the first slit overlies a portion of the surface barrier.
In yet another embodiment of the invention, an implantable prosthesis is provided for repairing a tissue or muscle wall defect located near a tube-like structure. The implantable prosthesis comprises a body portion that is constructed and arranged to be placed proximate the tissue or muscle wall defect, and includes an outer periphery and has an opening that is adapted to receive the tube-like structure. The body portion comprises a layer of repair fabric that is susceptible to the formation of adhesions with tissue and organs, and a plurality of barriers that inhibit the formation of adhesions on selected portions of the layer of repair fabric when the implantable prosthesis is placed in the patient. The layer of repair fabric includes first and second surfaces, an outer peripheral edge and an opening edge. The first surface is adapted to face the tissue or muscle wall defect when the implantable prosthesis is placed in a patient near the tube-like structure. The outer peripheral edge extends from the first surface to the second surface along the outer periphery, and the opening edge extends from the first surface to the second surface along the opening. The plurality of barriers includes a surface barrier that is disposed on at least a portion of the second surface of the layer of repair fabric, a peripheral edge barrier that is disposed along at least a portion of the outer peripheral edge of the layer of repair fabric, and an opening edge barrier that is disposed along at least a portion of the opening edge of the layer of repair fabric.
In a further embodiment of the invention, an implantable prosthesis is provided for repairing a tissue or muscle wall defect located near a tube-like structure. The implantable prosthesis comprises a prosthetic repair fabric that includes an outer periphery and has an opening therein that is adapted to receive the tube-like structure. The prosthetic repair fabric includes first and second segments, each of the first and second segments including a layer of fabric that is susceptible to the formation of adhesions with tissue and organs. Each of the first and second segments includes a first end and a second end, the first end of the first segment overlapping the first end of the second segment at a first overlap area, the second end of the first segment overlapping the second end of the second segment at a second overlap area. The first segment includes a first mid-portion between the first and second overlap areas and the second segment includes a second mid-portion between the first and second overlap areas. Each of the first and second mid-portions forms a portion of the outer periphery of the prosthetic repair fabric that is equal to or greater than approximately 90 degrees.
In another embodiment of the invention, an implantable prosthesis is provided for repairing a tissue or muscle wall defect located near a tube-like structure. The implantable prosthesis comprises a prosthetic repair fabric having an opening that is adapted to receive the tube-like structure, and includes first and second segments. Each of the first and second segments includes a layer of repair fabric that is susceptible to the formation of adhesions with tissue and organs and a surface barrier that inhibits the formation of adhesions with tissue and organs. The surface barrier is disposed on a surface of the layer of repair fabric. Each of the first and second segments includes a first end and a second end, the first end of the first segment overlapping the first end of the second segment at a first overlap area. The first overlap area is free of one of the layer of fabric and the surface barrier of at least one of the first and second segments.
In a further embodiment of the invention, a prosthetic repair fabric comprises a body portion of implantable, biocompatible prosthetic material. The body portion includes a middle section having a first width and a pair of end portions extending in a longitudinal direction from opposite sides of the middle section. Each end portion has a second width that is greater than the first width.
In yet another embodiment of the invention, a method is provided for treating gastroesophageal reflux disease. The method comprises creating at least one external fold on the external wall of the esophagus; and cinching the at least one external fold to create at least one external plication on the esophagus.
Other objects and features of the present invention will become apparent from the following detailed description when taken in connection with the accompanying drawings. It is to be understood that the drawings are designed for the purpose of illustration only and are not intended as a definition of the limits of the invention.


Manufacturing of semiconductor device includes forming, at substrate main surface, PMOS and NMOS regions separated by PN film. Polysilicon is formed at surface. First insulating film serves as gate insulating film. Second insulating film is formed on polysilicon surface, in gate electrode region extending from PMOS to NMOS regions across PN film. Polysilicon layer is patterned with second insulating film, and first gate electrode extends from PMOS region surface to PN and second gate electrode extends from NMOS region to PN connecting to first gate electrode. At main surface, opposed first source and drain regions are formed by placing first gate electrode therebetween in plan view. At main surface, opposed second source and drain regions are formed by placing second gate electrode therebetween in plan view. The second insulating film, covering first and second gate electrodes is patterned and exposed on PN. Exposed first and second gate electrodes are silicidized.

1. Field of the Invention
The present invention relates to a semiconductor device. More particularly, the present invention relates to a semiconductor device with a complementary metal oxide semiconductor (CMOS) transistor.
2. Description of the Background Art
A CMOS transistor is a transistor where an NMOS transistor and a PMOS transistor are paired. A dual-gate electrode is a single continuous gate electrode used as a common gate electrode by the NMOS and PMOS transistors. The dual-gate electrode in an area for configuring the NMOS transistor is formed of N+ polycrystal silicon while the dual-gate electrode in an area for configuring the PMOS transistor is formed of P+ polycrystal silicon.
Conventionally, for a semiconductor device with the CMOS transistor, particularly for a semiconductor device with the CMOS transistor adopting the dual-gate electrode, only the entire region of the active region, the dual-gate electrode and the interconnection is selectively silicided to connect the N+ polycrystal silicon portion and the P+ polycrystal silicon portion in the dual-gate electrode with low resistivity, by using a technique of siliciding a high-melting-point metal in a self-aligned manner. An example is disclosed in Japanese Patent Laying-Open No. 59-107540.
Since the entire region of the active region, the dual-gate electrode and the interconnection is conventionally silicided, an insulating film of identical shape with the dual-gate electrode cannot be formed such that it covers an upper side of the dual-gate electrode after silicidation. Accordingly, such an insulating film cannot be used as a stopper film to form a contact hole in a self-aligned manner.
Additionally, when the entire active region is silicided with the technique of siliciding a high-melting-point metal, a problem such as abnormal silicidation often causes electrical leakage between the active region and the well. Therefore, silicidation of the active region is not desirable.

Method of manufacturing semiconductor device having dual gate electrode


An electric motor is coupled to driving wheels 2, 2. When a slippage of the driving wheels 2, 2 is detected, the electric motor 5 produces a regenerative torque to suppress the slippage of the driving wheels 2, 2. The regenerative torque is controlled in a variable manner according to an index parameter that indicates a road surface condition. Thus, when the slippage of the driving wheels occurs, the slippage of the driving wheels is suppressed according to the road surface condition by a regenerative operation of the electric motor coupled to the driving wheels.

There has been known a conventional traction control device that controls a slippage of a driving wheel of a vehicle by applying a regenerative torque (braking torque) to the driving wheel from an electric motor. In general, the device of this type makes the electric motor produce a constant regenerative torque when the driving wheel slips.
However, if the regenerative torque produced by the electric motor is constant, the regenerative torque easily becomes excessive or insufficient depending on the road surface condition. For example, in the case where the regenerative torque is relatively high, if the coefficient of friction of the road surface is relatively high, the slippage of the driving wheel tends to be abruptly eliminated, and thus, the acceleration of the vehicle tends to abruptly vary. On the other hand, in the case where the regenerative torque is relatively low, if the coefficient of friction of the road surface is relatively low, it tends to take a long time to eliminate the slippage of the driving wheel.
As the traction control device of this type, there has been known a traction control device disclosed in Japanese Patent Laid-Open No. 11-105688 (referred to as Patent Document 1, hereinafter). The traction control device disclosed in the Patent Document 1 controls a slippage of a driving wheel (brings a slip ratio of a driving wheel close to 0) using an electric motor coupled to the driving wheel and a friction brake device for the driving wheel when the slippage of the driving wheel is detected.


An exercise apparatus includes a resistance device including left and right sheaves and associated rewind mechanisms. Left and right cords are routed from the sheaves through left and right swivel pulleys to left and right force receiving members. A person stands on a foot platform and exercises by using her arms and/or her legs to pull the cords from the sheaves. The person may stabilize herself by placing one or both hands on handlebars when those hands are not involved in the pulling activity.

Embodiments of the present invention relate to manually operated exercise equipment and more specifically, to methods and apparatus for accommodating a person in a standing position and performing exercises by pulling at least one cord from an associated sheave.
A variety of exercise devices have been developed to resist exercise motion. Examples are disclosed in U.S. Pat. Nos. 6,726,607 and 7,087,001 to Ihli, U.S. Pat. Nos. 8,465,410, 8,523,745, 8,556,783, 8,556,785, and 8,622,879 to Ihli et al., and U.S. Patent Publication Nos. 20180021617 and 20180280753 in the name of Ihli et al., An object of the present invention is to provide improved exercise devices and methods of using same.


An adaptive filter calculates a target pixel from an interlaced video signal. The video signal comprises a plurality of frames, each of which comprise an even and an odd field. The filter comprises a quantized motion calculator and a filter selector. The quantized motion calculator estimates an amount of motion about the target pixel. The filter selector selects a filter in accordance with the estimated amount of motion. The filter applies a first weighting factor to a plurality of current field pixels and a second weighting factor to a plurality of previous field pixels for creating the target pixel.

The present invention relates generally to a video format conversion system, and in particular to a video format conversion system for converting interlaced video to progressive video interlaced video to interlaced video of a different size.
Interlaced signals are generated from a line-by-line scan of an image scene. The signals are generated by scanning and transmitting every other line of the image scene. In this way, even lines of the image scene are scanned and transmitted and then odd lines are scanned and transmitted. The even and odd lines in the image scene are referred to as the even field and the odd field, respectively. A time delay between the image scene capture of the even and odd fields is approximately one sixtieth of a second. A combination of the even field and the odd field is often referred to as a frame of image data. The frame comprises information required to represent the entire image scene.
At an interlaced monitor, the fields are displayed by alternately rendering the information in the even field to the even lines on the monitor and the information in the odd field to the odd lines on the monitor. The overall effect, as perceived by a viewer, is the complete reconstruction of the image scene. That is, the image scene appears to contain all vertical information. Despite the apparent reconstruction, displaying interlaced video signals has several drawbacks, which include introducing artifacts associated with interlaced signals.
Alternately, the interlaced signal may be deinterlaced for display on a progressive monitor. The progressive monitor displays each line of the image scene progressively. That is, each line of data is displayed in order, starting from the top row of the display and progressing row by row to the bottom. Furthermore, progressively scanned display formats present all lines in the image scene at sixty frames per second. However, interlaced video signals only transmit half of the image scene every one sixtieth of a second. Since there is no delay between the presentation of the even and odd rows of image scene information, the number of scan lines of data visible at a given instant in time is twice that which is visible in a corresponding interlaced system. Thus, there is an information shortfall during format conversion. The format conversion challenge is that of reconstructing the entire image scene at an instant in time, even though only half of it is available at that time.
Format conversion from an interlaced signal to a progressive signal may be accomplished in a number of ways. One of the simplest methods is field meshing. Field meshing is a process whereby the even field information is copied to the even lines and the odd field information is copied to the odd lines. There is no regard for the temporal delay between the even and odd fields. An obvious problem with this approach is an abhorrent visual quality that results when motion is present in the image scene. Specifically, a well-known artifact referred to as xe2x80x9cfeatheringxe2x80x9d results.
Line doubling is alternate manner of interlaced-to-progressive conversion. Line doubling involves the interpolation of missing lines based only lines in the field available at that time. The line doubling method has several drawbacks, one of which is the complete discounting of relevant image scene information in a previous field. Line doubling can lead to flicker and to a loss of vertical detail. Flicker is usually most noticeable around hard edges such as lines and text within the image scene, and generally in areas containing fine detail.
Flicker is the result of horizontal, or near horizontal, structures in the image scene having a spatial frequency content that cannot be adequately represented by an interlaced signal because an interlaced image is sub-sampled vertically. A stationary horizontal edge, for example, lies on an even row or an odd row, at any given instant in time, in an interlaced image. Therefore, the edge frequently alternates back and forth between the even and odd field, causing a viewer to perceive the edge as flickering. Flicker reduction is important because many menus such as On Screen Displays, DVD Menus, and other forms of information containing hard (high contrast) and persistent edges need to be kept stable.
Other known artifacts of line doubling include stair-stepping. Stair-stepping occurs because an interlaced image is vertically sub-sampled. That is, not all the row information in the image scene is available at the same instant in time. The consequence is stair-stepping artifact.
Format conversion algorithms aim to minimize the artifacts that result during conversion. Conversion can take on the form of interlaced-to-interlaced conversion, or interlaced-to-progressive conversion.
Yet an alternate form of deinterlacing employs what is known as motion compensated interpolation. Motion compensated interpolation attempts to compensate for the motion in the image scene by identifying regions or groups of pixels in a previous field and placing them in their correct spatial orientation relative to the current field. Such methods usually employ a block matching strategy that aims to minimize a measurement function aided by a computed motion vector. Such strategies often depend upon vast computational resources to operate effectively, and even then, mismatching errors can result. Mismatches can be perceptually dissatisfying to a viewer, especially when a portion of the image content is placed in the wrong part of the target image.
U.S. Pat. No. 6,141,056 issued to Westerman discloses a video format conversion system for converting interlaced video into progressive video using motion compensation. However, the system described by Westerman involves calculating derivatives and intervals of various quadratic functions. Such a system still requires huge computational power. Furthermore, research has shown that adjusting the filters based solely on motion information results in blotchy processed sequences.
Several format conversion solutions pertaining to deinterlacing involve a technique called vertical-temporal (VT) filtering. This technique is used in an attempt to deal with the problems that arise due to the sub-sampled nature of interlaced video. The basic idea behind VT filtering is to combine pixels in adjacent fields by numerical interpolation in order to compute a target pixel in the processed (deinterlaced) image. However, these methods cannot scale and deinterlace simultaneously. Nor do they that deal effectively with the artifacts inherent in interlaced images, namely flicker, stair-stepping and especially artifacts that are motion-related such as feathering.
Therefore, it is an object of the present invention to obviate or mitigate at least some of the above-mentioned disadvantages.
Motion Adaptive Vertical Temporal (MAVT) filtering is useful in format conversion. Format conversion takes on the form of interlaced-to-progressive scan or interlaced-to-interlaced (reinterlacing) conversion in which scaling and deinterlacing, and scaling and reinterlacing occur simultaneously. A MAVT filter combines pixel information for adjacent field. The MAVT adjusts a multi-dimensional filter to alter the contribution from each pixel in the adjacent fields for determining a target pixel. The format conversion method examines various aspects of the pixel information content in the image scene. Pixels are examined in a neighborhood about the interpolated target pixel along several axes. These axes include, among others, a spatio-temporal axis, a noise axis, a motion axis, and an image structure axis such as lines and edges. In addition, historic information from previous pixel data is used to help determine the best set of coefficient weights to apply to the source image data in order to generate the target pixel during format conversion.
In accordance with an aspect of the present invention there is provided an adaptive filter for calculating a target pixel from an interlaced video signal comprising a plurality of frames. Each of the frames comprises an even and an odd field. The filter comprises a quantized motion calculator for estimating an amount of motion about said target pixel and a filter selector for selecting a filter in accordance with the estimated amount of motion. The filter applies a first weighting factor to a plurality of current field pixels and a second weighting factor to a plurality of previous field pixels for creating the target pixel.
In accordance with a further aspect of the invention, there is provided a feathering detector for detecting a feathering artifact in adjacent odd and even fields about a target pixel. The feathering detector comprises a contour selector, a difference calculator and a plurality of predefined thresholds. The contour selector selects from a plurality of contours, including non-linear contours. The difference calculator calculates a plurality of differences between pixels along the selected contour. The plurality of predefined thresholds compared with the calculated differences for determining if feathering exists about the pixel. Including non-linear contours among the contour selection improves feathering detection in arbitrary shapes.
In accordance with yet a further aspect of the invention, there is provided a method for selecting a filter for calculating a target pixel from an interlaced video signal. The signal comprises a plurality of frames, each of which comprise an even and an odd field. The method comprises the steps of estimating an amount of motion between consecutive frames about the target pixel, detecting feathering between consecutive fields, detecting vertical edges about said target pixel, and detecting patterns indicative of motion and patterns indicative of no motion. The estimated amount motion is adjusted in accordance with the feathering, edge and pattern detection and a filter is selected accordingly. A first weighting factor is applied to a plurality of current field pixels and a second weighting factor is applied to a plurality of previous field pixels for creating the target pixel.

Method and apparatus for motion adaptive deinterlacing


A device configured to display a first video scene and a progress bar for a Hypertext Markup Language (HTML) video and to receive a user input that indicates a time instance value on the progress bar. The device is further configured to identify a first source scene identifier for a second video scene and an animation identifier that is linked with the second video scene based on the time instance value. The device is further configured to identify HTML code that is associated with the first source scene identifier and the first animation identifier and to compile the identified HTML code to render the second video scene. The device is further configured to generate a scaled second video scene by reducing a size of the rendered second video scene to fit a preview frame and to display the scaled second video scene in the preview frame.

A web platform provides a computer network that enables users to access information from multiple sources. However, users typically have to visit multiple areas within the web platforms to gather what is meaningful to them. In existing systems, users do not have the capability to define their own personalized web content and access the web content without being redirected to multiple areas within the web platform. For example, a user may want to trade (e.g., buy or sell) a particular stock on a web platform. The user may go to a first place of the web platform to view statistics such as past performance of the stock, go to a second place of the web platform to check whether the user has enough account balance to trade the stock, and then go to a third place of the web platform to watch a video on how to conduct a trade on the stock. This process is not only inefficient, but it also poses several technical challenges. For example, this process constantly consumes network resources and bandwidth while user visits the multiple locations within the web platform. This process also consumes computing resources to process all the user's requests to visit the multiple locations in the web platform. In addition, this process also significantly increases the time it takes for the user to obtain the meaningful information which degrades the user's satisfaction with the web platform.

Video previews for interactive videos using a markup language