A liquid crystal antenna and a manufacturing method thereof are disclosed. The liquid crystal antenna includes: an antenna array including a first substrate and a second substrate arranged opposite to each other and configured to change a phase of an electromagnetic wave signal fed into the liquid crystal antenna to transmit or receive a beam in a preset direction; and an inertial navigation element configured to determine a motion parameter of the liquid crystal antenna in a navigation coordinate system, the inertial navigation element is disposed on a side of the second substrate facing the first substrate; and the antenna array adjusts the preset direction according to the motion parameter acquired by the inertial navigation element.

Liquid crystal antenna refers to an adaptive antenna which can automatically adjust a weight vector of each antenna array element to a signal in a certain direction according to a specific receiving criterion, so as to transmit or receive a beam in a preset direction, and align the main lobe direction with a useful signal, and meanwhile, align the low side lobe or the null steering direction with the interference signal direction, and hence can achieve the purpose of "spatial filtering".
Inertial navigation system is an autonomous navigation system that does not rely on external information and does not radiate energy to the outside. A gyroscope and an accelerometer are used as sensing devices of a navigation parameter solving system. The system establishes a navigation coordinate system according to the output of the gyroscope, and calculates the speed and the position of a carrier in the navigation coordinate system according to the output of the accelerometer.

Liquid crystal antenna and manufacturing method thereof

BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.


A computer-implemented method for executing a floating-point calculation where an exact value of an associated result cannot be expressed as a floating-point value is disclosed. The method involves: generating an estimate of the associated result and storing the estimate in memory; calculating an amount of error for the estimate; determining whether the amount of error is less than or equal to a threshold of error for the associated result; and if the amount of error is less than or equal to the threshold of error, then concluding that the estimate of the associated result is a correctly rounded result of the floating-point calculation; or if the amount of error is greater than the threshold of error, then testing whether the floating-point calculation constitutes an exception case.

1. Field of the Invention
The present invention relates generally to computer systems for solving mathematical problems and, more specifically, to a system and method for testing whether a result is correctly rounded.
2. Description of the Related Art
A typical modern computer system includes one or more processor cores. Each core has a floating-point unit and/or may execute software to perform arithmetic operations, including floating-point addition, subtraction, multiplication, division, and square root. Processor cores implement a system of digits, typically binary or hexadecimal (base-16) to represent numbers. In these systems, some multiplicative inverse or division calculations, for example 3−1 or ⅓, cannot be expressed exactly, as the exact result would contain an infinite number of bits or a greater number of bits than can be stored in a floating-point variable, e.g., ⅓=0.333333 . . . in decimal form or 0.010101 . . . in binary form. These values therefore must be expressed as rounded to a certain limit of significance, such that the values can be expressed in a finite number of bits. The finite number of bits used by a processor core to represent a floating-point variable is referred to as the processor core's precision. A processor core may support more than one floating-point format. The accuracy of a floating-point value refers to how close the representation of a numeric value is to an infinitely precise representation. Skilled persons in the art are aware that, for modern processor cores, the standard for rounding multiplicative inverse, division, and square root calculations is set forth in IEEE Standard 754 for Binary Floating-Point Arithmetic developed by the Institute of Electrical and Electronics Engineers.
As is well-known, a floating-point number is represented as a sign (string of digits representing a plus or minus), a mantissa (string of digits representing the number without an exponent), and an exponent. The value of the floating-point number is determined by taking the product of the sign, the mantissa, and a base raised to the power of the value represented in the exponent field. The total space allocated for representing a floating-point number can be, for example 32 bits, for single precision, or 64 bits, for double precision.
One set of techniques known in the art for estimating the result of multiplicative inverse, division, and square root calculations involves convergence. Examples of a convergence techniques are the "long division" technique where one bit or one digit at a time is calculated, or Newton-Raphson techniques where a set of digits is calculated at a time. In other words, the technique requires that the processor estimates the next digits in the result only after the current digit has been determined. Convergence techniques are conventionally implemented for a worst case scenario optimization where the eventual convergence always guarantees that the "correct" result is obtained. In such an approach, the correct result, according to IEEE Standard 754, is oftentimes obtained as an "intermediate result" prior to the completion of the calculation. For example, one convergence technique calculates a result, y, of a multiplicative inverse problem, 1/b, by calculating three intermediate results y1, y2, and y3, before arriving at the final result y4=y, which is guaranteed to be correct according to IEEE Standard 754. Each successive intermediate result is closer to the correct value than the previous result, i.e., y2 is closer to the correct result than y1. However, oftentimes, the correct result may be reached in fewer than four steps, i.e., y3=y4=y. In this case, y4 would still be calculated from y3, as there is no guarantee that y3 is the correctly rounded result. As is well-known, exceptions are raised when a result of a calculation is positive or negative infinity or not a number (NAN). In conventional processors, a determination as to whether an exception would be raised is made early in the calculation process so as to avoid making a calculation the result of which cannot be expressed as a floating-point number. If an exception would be raised, then an exception handler is invoked.
One drawback of such an approach is that processor cores implementing the convergence method for multiplicative inverse, division, and square root calculations often waste processing time and resources on unnecessary calculations. For example, processing time and resources are wasted if an intermediate result, which is being refined by the convergence method, is already equal to the correct result according to IEEE Standard 754. Another drawback of such an approach is that processing time and resources are wasted to determine whether a calculation raises an exception, where such exceptions occur relatively infrequently.
As the foregoing illustrates, what is needed in the art is a more efficient technique for determining whether the result of such computations conforms to conventional IEEE floating-point standards.

System and method for testing whether a result is correctly rounded


Method and arrangement for providing an end connection for pipes made from a rigid, but deformable material. An end connection includes a pipe casing (1) that protrudes into a pipe end (15). The pipe casing has an outer mantle surface extending symmetrically around a longitudinal axis (9), to yield a surface (2) of substantially circular cross section having a diameter allowing the pipe end to be applied over the pipe casing. The mantle surface has two recessed parts (3, 4) running peripherally therearound to receive embossed parts (24, 25) of the pipe end (15) for rotational movement between the pipe end and the pipe casing (1). A sealing member (13), between the recessed parts (3, 4), seals a portion of the space between the outer mantle surface and the pipe end.

From U.S. Pat. No. 6,059,338, it is previously known to arrange a pipe connection in the form of a tubular casing that is inserted in one end of a pipe. The pipe casing is formed with countersinks in which embossings are carried. A sealing element is arranged between the pipe casing and the pipe end. In order to obtain complete sealing, the sealing element has to be compressed, thus rendering the friction between the sealing element and the pipe casing on one hand, and the pipe end on the other hand so high that any relative rotation between the pipe casing and the pipe end normally is not possible.
For certain types of connections, the connection must be made in a predetermined rotational position of the connection relative to, for example, a fixed part in a pipe system. At conventional pipe connections, for example hydraulic systems, the pipe end and the pipe casing inserted therein are in many cases firmly connected with each other by means of soldering. Thus the pipe casing must be connected to the pipe end with a predetermined rotational angle, which requires special fixtures for final assembly of the end connection.

End connection for pipes and a method for its manufacture


To provide a blade for electrophotographic apparatus that can have much superior durability as being made low frictional at its touching part and also improved in bonding force between the touching part and the blade member, a blade for electrophotographic apparatus is provided which has a blade member having a touching part which is to come into touch with an object member, and a support member which holds the blade member; the touching part being formed of a material which is different from that for the blade member; the touching part having a touching face having a coefficient of static friction which is smaller than that of a surface of the blade member; and the touching part having a joint surface at which the touching part is joined with the blade member which joint surface has a center line average roughness Ra of from 0.5 μm to 10.0 μm.

1. Field of the Invention
The present invention relates to a blade for electrophotographic apparatus which blade is used in electrophotographic apparatus, and a process for manufacturing the same.
2. Description of the Related Art
In general, in electrophotographic apparatus, images are formed in such a cycle that a toner in a developer container is uniformly charged, which is then made to adhere to an electrostatic latent image on a photosensitive member to develop the latent image to form a toner image, thereafter the toner image is transferred to a recording medium such as a paper sheet, a belt, and thereafter any toner remaining on the photosensitive member is removed. Accordingly, the electrophotographic apparatus are each provided with, e.g., a cleaning blade which is made up of a support and joined thereto a blade member, and a developer blade which forms a thin layer of toner while triboelectrically charging the toner in the developer container.
This cleaning blade is required to have various properties and performance. They may include, e.g., wear resistance for making the blade highly durable, low frictional properties for preventing its turn-over, noise generation and making the photosensitive member drivable at a low torque, cleaning performance in broader environmental ranges, and resistance to compression set caused by its long-term pressure touch with the photosensitive member. In recent years, with much further progress toward high-speed printing and high durability and also for the purpose of making image quality higher, toners have been made to have spherical particles and small particle diameter, and hence the cleaning blade is sought to have the above properties and performance at higher levels.
Conventionally, the cleaning blade is integrally formed of a support member made of a metal, through which the blade is to be attached to an electrophotographic apparatus or the like, and a blade member made of an elastic material, which stands attached to one end portion of the support member. Then, as a material for making up the blade member, a heat-curable polyurethane elastomer is usually used as being excellent in the wear resistance and the resistance to compression set.
Here, in order for the cleaning blade to be improved in cleaning performance, it is considered to bring the cleaning blade into touch with the photosensitive member at a higher pressure, i.e., to make larger the level of penetration in bringing the blade into touch with the photosensitive member. In such a case, however, a large frictional force may come between the cleaning blade and the photosensitive member to remarkably cause problems that the cleaning blade turns over, makes noise and makes the photosensitive member driven at a high torque. Hence, it is sought to make the cleaning blade low frictional at its part coming into touch with the photosensitive member.
Accordingly, in order to make the blade low frictional at its part coming into touch with any member (hereinafter this part is also termed "touching part"), various methods have conventionally been attempted.    (1) As a first method, a method may be given in which a blade is coated on its surface with a lubricating powder.    (2) As a second method, a method may be given in which a blade material heat-curable polyurethane elastomer is made highly hard as a whole to make the blade low frictional.    (3) As a third method, a method may be given in which a blade member made of a heat-curable polyurethane elastomer is made low frictional only at its surface to keep elasticity of the whole blade. For example, as disclosed in Japanese Patent Application Laid-open No. 2007-163676, a liquid synthetic resin that forms a partial layer is casted in the form of a bead into one mold of a split mold, and thereafter the mold is assembled and then a base layer is formed so as to make the blade member highly hard and highly repulsive only at its touching part to make it low frictional at that part. The method disclosed in Japanese Patent Application Laid-open No. 2007-163676 enables manufacture of a blade for electrophotographic apparatus in which, as shown in FIG. 1, touching part 3 coming into touch with a photosensitive member or the like is formed of a material different from that for a blade member 2 attached to one end portion of a support member 1.
The above methods, however, have brought about problems as stated below.    (1) In the first method, it may be difficult to perform uniform coating. Also, the coating formed may tend to come off to result in a poor durability. Further, it follows to use a halogen type organic solvent when coated, which may be undesirable for environment.    (2) In the second method, if the blade material is made highly hard to a level of making it low frictional, it may scratch the photosensitive member or developing roller. Also, the blade may come insufficient in rubber elasticity required therefor.    (3) In the third method, a touching part made of a different material is partially formed on the blade member at its touching face, and hence the touching part may come separated from the blade member where the level of penetration in bringing the blade into touch with the photosensitive member is set larger or where the blade is made highly durable.

Blade for electrophotographic apparatus, and process for manufacturing the same


According to this invention, there is disclosed a semiconductor device in which a memory section and a logic section are arranged on the same semiconductor chip, comprising a high-resistance element constituting a memory cell, a low-resistance line connected to the high-resistance element, a power source line serving as a power source path from a power source pad, a switching element arranged between the low-resistance line and the power source line, and a control circuit for controlling the switching element.

1. Field of the Invention
The present invention relates to a semiconductor memory device and, more particularly, to a semiconductor memory device used for controlling power consumption of an IC on which a high-resistance load type static RAM and a logic circuit are mounted.
2. Description of the Related Art
Conventionally, memory cells of a high-resistance load type static RAM, i.e., an E/R type static RAM (Enhancement/Resistor type static RAM to be referred to as "E/R type SRAM" hereinafter) have a circuit arrangement, e.g., shown in FIG. 1. Referring to FIG. 1, reference symbol V.sub.DD denotes a positive power source voltage; V.sub.SS, a ground power source voltage; R, a high-resistance load; Tr1 and Tr2, transferring gates constituted by n-channel MOS transistors; Tr3 and Tr4, driver transistors constituted by n-channel MOS transistors; B and B, bit lines; and W, word lines.
In general, the high-resistance load R used in the memory cell of the E/R type SRAM is constituted by a second polysilicon layer to decrease an area occupied by the memory cell. This can be achieved by a two-layer polysilicon technique in which the gate electrodes of the MOS transistors are constituted by a first polysilicon layer, and the high-resistance load R is constituted by the second polysilicon layer. In addition, in the high-resistance load type cell, since a data retention current (standby current, to be referred to as "leakage current" hereinafter) I.sub.R is changed according to the resistance of the high-resistance load R, the resistance generally has a large value.
As the first characteristic of the E/R type SRAM, the E/R type SRAM is integrated at a high density. When the two-layer polysilicon technique is used, as described above, the first polysilicon layer is used as the gate electrodes of the MOS transistors Tr1 to Tr4, and the high-resistance load R can be formed by the second polysilicon layer formed on the MOS transistors Tr1 to Tr4. As the second characteristic, a relatively small leakage current I.sub.R can be obtained by a technique for increasing the resistance of the polysilicon layer. Therefore, in the above load cell, it is generally advantageous that the load R has a resistance as high as possible. Note that, at present, an increase in resistance of the load R is a required condition for obtaining a large-capacity memory. For example, in a 1-Mbit SRAM, in order to obtain a leakage current I.sub.R of several .mu.A (micro ampere), each memory cell is required to have a load resistance of several tera ohms (10.sup.12 .OMEGA.) or more. However, in consideration of a margin in the actual manufacture, a resistance of several tera ohms or more is difficult to always obtain, and the leakage current I.sub.R has variations in the range of several .mu.A to several hundred .mu.A, i.e., the maximum variation being hundred times or more the minimum variation.
In a semiconductor memory device on which an E/R type SRAM and a logic circuit are mounted, as shown in FIG. 2, power source voltages V.sub.DD and V.sub.SS of a logic section 11 and power source voltages V.sub.DD and V.sub.SS in a memory section 12 of the E/R type SRAM are generally applied from the same power source pads 13a and 13b. Therefore, when the power consumption of a semiconductor chip 14 is evaluated, the power consumption of all the E/R type SRAM and the logic section must be evaluated. A total current is evaluated at present.
For example, in the semiconductor chip 14 on which a large-capacity E/R type SRAM and a logic section are mounted, a variation in the leakage current I.sub.R from a memory section 12 of the E/R type SRAM is larger than that of a leakage current from the logic section 11. That is, when a total leakage current of the semiconductor chip 14 is evaluated, since the static current consumption of the logic section 11 is generally about 100 .mu.A, the leakage current from the logic section 11 and a current obtained by varying the leakage current I.sub.R from the memory section 12 of the E/R type SRAM cannot be distinguished from each other.
Note that the logic section 11 and the memory section 12 of the E/R type SRAM have different device arrangements, and a defective device may be formed in manufacturing. The logic section 11 and the memory section 12 must be independently discriminated from each other. Therefore, the independent discrimination of errors of leakage currents from the logic section 11 and the memory section 12 of the E/R type SRAM is one of the important factors. However, in a conventional circuit arrangement, this independent discrimination cannot be performed.
As described above, in a conventional semiconductor memory device, although the independent discrimination of errors of the leakage currents from the logic section and the memory section of the E/R type SRAM is important, it cannot be performed, resulting in inconvenience.

Semiconductor memory device having electrically isolated memory and logic sections


An electrosurgical generator which provides a constant voltage and variable power output particularly suited for cutting arc formation at an active electrode which exhibits a dynamic active surface area of varying geometry. Essentially constant voltage-based control is achieved through the utilization of a d.c. link voltage the level of which functions to establish the amplitude of the output of an RF resonant inverter. A dual loop feedback control is described wherein output voltage based control signals are slowly introduced at low gain, while link voltage motor-based controls are comparatively rapidly applied. Enhanced development of a controlling d.c. link voltage is achieved through the utilization of an input network incorporating a power factor correction stage.

The use of electrotherapy by medical investigators historically reaches back to the eighteenth century. In that era, electrotherapy static generators were the subject of substantial interest. As the twentieth century was approached, experimentation applying high frequency currents to living tissue took place, d""Arsonal being considered the first to use high frequency currents therapeutically. The use of high frequency currents for the purpose of carrying out electrosurgical cutting and the like was actively promoted in the 1920s"" by Cushing and Bovie. In the 1970s, solid state electrosurgical generators were introduced, and a variety of such generators now are available in essentially all operating theatres.
When high frequency currents are used for cutting and coagulating, the tissue at the surgical site is subjected to controlled damage. Cutting is achieved by disrupting or ablating the tissue in immediate apposition to the excited cutting electrode, i.e., slightly spaced before it so as to achieve the formation of a cutting arc. Continuous sine waveforms generally are employed to carry out the cutting function where tissue cells adjacent to the electrode are vaporized. An advantage of this electrosurgical cutting procedure over the use of the cold scalpel resides both in an ease of cutting and a confinement of tissue damage to very small and shallow regions. In the latter regard, cells adjacent the cutting electrode arc are vaporized and cells only a few layers deeper are essentially undamaged. These cutting systems, in general, are employed in a monopolar manner wherein the cutting electrode is considered the active one and surgical current is returned from a large, dual component dispersive electrode coupled with the skin of the patient at a remote location.
Coagulation also may be carried out using a high frequency generator source and is accomplished by denaturation of tissue proteins due to thermal da Image. Interrupted or discontinuous waveforms typically are employed to carry out coagulation. Coagulation is considered generically as including:
(1) fulguration in which tissue is carbonized by arc strikes,
(2) desiccation in which the cells are dehydrated, and
(3) white coagulation in which tissue is more slowly heated to a coagulum.
The interrupted wave based coagulation procedure has been carried out with both monopolar and bipolar systems.
In order to obtain cutting with hemostasis to arrest bleeding, present day electrosurgical generators may be controlled to blend cutting and coagulating waveforms. To achieve this blend, for instance, a lower amplitude continuous sine waveform is combined with higher amplitude coagulate pulses prior to output voltage elevation by power amplification procedures or the like.
The electrosurgical cutting reaction has been the subject of considerable study. In this regard, some investigators observed that cutting is achieved as the electrical conduction of current heats the tissue up to boiling temperatures and the cells are basically exploded as a result of the phase change. Another, parallel mechanism has been described wherein, as an intense electromagnetic field impinges on absorbing tissue, an acoustic wave is generated by the thermal elastic properties of the tissue. The origin of the pressure wave lies in the inability of the tissue to maintain thermodynamic equilibrium when rapidly heated. See generally:
xe2x80x9cElectrosurgeryxe2x80x9d by J. A. Pierce, John Wiley and Sons New York, N.Y.
Paramount to the cutting procedure is the generation of an arc within the evoked vapor phase. When cutting is being performed, the cutting electrode is not in mechanical contact with tissue, but rather rides on a vapor film as it is moved through the tissue. Thus, it is the separation between the cutting electrode and tissue which allows the possibility for arc formation while cutting. With the existence of this arc, current flow is highly confined, arcs by their nature being quite localized in both space and time, consisting of very short high current density discharges.
Electrosurgical generators generally are configured to derive a requisite arc formation with an active electrode of fixed geometry. For instance, the active electrodes may take the shape of a rod or spade-shaped scalpel. Arc formation requires technique on the part of the surgeon, the electrode being gradually moved toward target tissue until the spacing-based impedance is suited for striking an arc. The energy creating the arc typically is generated by a resonant inverter operating at an RF frequency. Control over such inverters is problematic, inasmuch as the arc represents a negative dynamic impedance. In general, some regulation of voltage feeding the RF invertors is carried out, however, overall output control is based upon a power level selection. Inverter control by output voltage feedback generally has been avoided due principally to the above-noted load characteristics of the necessary arc. Such attempted control usually evolves an oscillatory instability. Accordingly, power-based control is employed with marginal but medically acceptable output performance.
Currently developing electrosurgically implemented medical instrumentation, however, has called for active cutting electrodes of highly elaborate configuration with a geometry which alters in active surface area during a procedure. Generators exhibiting a relatively constant power output cannot sustain an arc under such operational conditions. In this regard, the power output must be variable to track the changing shape and size of the active electrode. This, in effect, calls for an electrosurgical generator capable of producing an RF cutting output under constant voltage control and variable power conditions.
Another developing operational requirement for the electrosurgical generator is a concern for initial arc formation. Applications of the newly contemplated systems call for arc start-up when the active electrode is embedded within and in contact with the tissue to be cut. No preliminary impedance defining spacing otherwise attained by the technique of the surgeon is available to achieve initial arc formation.
The present invention is addressed to an electrosurgical generator capable of forming and sustaining a cutting arc at an active electrode exhibiting dynamic active surface area characteristics. In achieving this sustained arc formation, the generator provides for the derivation of a controlled and regulated D.C. link voltage, the level of which functions to control an arc generating inverter. Constant voltage and variable power attributes are realized by providing an outer loop output voltage-based feedback control exhibiting a lower gain or slow input control over the d.c. link voltage. This outer loop control is combined with a rapid, high gain characterized inner loop feedback control over the d.c. link voltage. The latter control facilitates the development of the voltage enhancement at the start up or restart of a procedure. This enhancement functions to create the requisite cutting arc under conditions wherein the active electrode is embedded in tissue. To develop this start up voltage, the noted d.c. link voltage is elevated to a boost voltage level for a boost interval sufficient to generate an arc, whereupon normal cutting voltage levels are derived, again through adjustment of the d.c. link voltage.
The electrosurgical generator incorporates an input treatment network which includes a power factor control stage functioning to align incoming current and voltage with the attendant traditional advantages. However, this input stage both permits use of the generator on a universal, worldwide basis notwithstanding variations in utility power specifications, and, importantly, establishes an interim regulated voltage level which is advantageously utilized by the d.c. link inverter deriving the controlled d.c. link voltage.
Other objects of the invention will in part, be obvious and will, in part, appear hereinafter. The invention, accordingly, comprises the apparatus and method possessing the construction, combination of elements, arrangement of parts and steps which are exemplified in the following detailed description.
For a fuller understanding of the nature and objects of the invention, reference should be had to the following detailed description taken in connection with the accompanying drawings.


A semiconductor package having an optical device and the method of making the same, includes a transparent substrate, a chip, an optical device and a carrier substrate. The transparent substrate has a plurality of first contacts and second contacts, wherein the first contacts are electrically connected to the second contacts. The chip is connected to the transparent substrate and forms a gap therebetween. The chip has a plurality of third contacts that are electrically connected to the first contacts. The optical device is disposed in the gap. The carrier substrate has a receiving space and a plurality of fourth contacts, wherein the receiving space accommodates the chip and the optical device, and the fourth contacts are electrically connected to the second contacts of the transparent substrate. Therefore, no connecting wires are needed and the step of wire bonding is omitted. Also, only one transparent substrate is used in the semiconductor package.

1. Field of the Invention
The invention relates to a semiconductor package and the method of making the same, particularly to a semiconductor package having an optical device and the method of making the same.
2. Description of the Related Art
FIG. 1 shows a conventional semiconductor package having an optical device. The conventional semiconductor package 1 comprises a substrate 11, a CMOS chip 12, an optical device 13, a spacer 14, a plurality of wires 15, a carrier substrate 16, a circumfluent wall 17 and a glass substrate 18.
The substrate 11 has a die pad 111 and a plurality of substrate-contacts 112, wherein the die pad 111 and the substrate-contacts 112 are both on a top surface 113 of the substrate 11. The substrate-contacts 112 are formed around the die pad 111. The CMOS chip 12 has an active surface 121 and a back surface 122, wherein the active surface 121 has a plurality of chip-contacts 123, and the back surface 122 is adhered to the die pad 111 of the substrate 11 by an adhesive layer 10. The chip-contacts 123 are electrically connected to the substrate-contacts 112 by the wires 15.
The carrier substrate 16 has a bottom surface 161, and the optical device 13 is disposed on the bottom surface 161. The carrier substrate 16 is usually a transparent material. The spacer 14 is disposed between the active surface 121 of the CMOS chip 12 and the bottom surface 161 of the carrier substrate 16. The spacer 14 is ring-shaped and defines a first receiving space 141 for accommodating the optical device 13.
The circumfluent wall 17 is adhered to the top surface 113 of the substrate 11, and the circumfluent wall 17 and the top surface 113 of the substrate 11 define a second receiving space 171 for accommodating the CMOS chip 12, the optical device 13, the spacer 14, the wires 15 and the carrier substrate 16. The glass substrate 18 covers the circumfluent wall 17 so as to seal the second receiving space 171.
FIG. 2 shows the optical device 13 in FIG. 1. The optical device 13 is a Micro-Electro-Mechanical System and comprises at least one micro lens group 19. Each micro lens group 19 comprises a supporting element 20, a hinge 21 and a micro lens 22. The supporting element 20 has a first end 201 and a second end 202, wherein the second end 202 of the supporting element 20 is disposed on the bottom surface 161 of the carrier substrate 16. The hinge 21 is disposed at the first end 201 of the supporting element 20. One end of the micro lens 22 connects onto the hinge 21. The bottom of each micro lens group 19 exactly corresponds to a memory unit (not shown) of the CMOS chip 12. The micro lens 22 of the micro lens group 19 can be controlled by controlling the logic layers of the corresponding memory units so as to revolve around the hinge 21.
The conventional semiconductor package 1 has the following defects. For the conventional semiconductor package 1, the wires 15 are used to electrically connect the chip-contacts 123 to the substrate-contacts 112. Therefore, a wire bonding process is required. In addition, the conventional semiconductor package 1 needs two transparent substrates (i.e. the carrier substrate 16 and the glass substrate 18), so that the packaging process will be more complicated, and the production cost will increase.
Consequently, there is an existing need for providing a semiconductor package having an optical device and the method of making the same to solve the above-mentioned problems.

Semiconductor package having an optical device and the method of making the same

Advanced Semiconductor Engineering, Inc.


A piezoelectric sensor including: a piezoelectric sheet; a first ground electrode integrally laminated on a first side of the piezoelectric sheet and having a first cutout section; a signal electrode integrally laminated on a second side of the piezoelectric sheet and having a third cutout section; and a second ground electrode integrally laminated on the signal electrode so as to be electrically insulated from the signal electrode and having a second cutout section. The cutout sections of the signal electrode, the first ground electrode, and the second ground electrode are at least partially overlapped with one another in a thickness direction of the piezoelectric sheet. A portion of the piezoelectric sheet exposed from a portion where the cutout sections of the signal electrode, the first ground electrode, and the second ground electrode are overlapped with one another serves as an exposed section.

Vital signal sensors employing piezoelectric sheets as sensors have been known. When a pressure generated by a pulse wave, a respiration, or a body motion is applied on the piezoelectric sheet, an electrical signal having a size corresponding to the pressure is generated from the piezoelectric sheet. A vital signal can be detected through the use of this electrical signal.
Patent Literature 1 discloses a piezoelectric sensor including: a piezoelectric body made from a macromolecular material; a first electrode supporting section being disposed on one side of the piezoelectric body and supporting a signal electrode on a first insulator; and a second electrode supporting section being disposed on the other side of the piezoelectric body and supporting a ground electrode on a second insulator. In the piezoelectric sensor, the signal electrode is confined within a region of the piezoelectric body as viewed in a direction in which the piezoelectric body, the first electrode supporting section, and the second electrode supporting section are overlapped with one another, and the entire piezoelectric body is confined within a region of the ground electrode or disposed so as to overlap the region of the ground electrode.

Piezoelectric sensor including overlapping cutout sections in a signal electrode, a first ground electrode, and a second electrode


A method and system for producing a group of growth-induced seeds for commercial use or sale, the method including monitoring a physiological indication and/or morphometric indication for a seed, automatically determining if the monitored seed has a specific characteristic, separating the monitored seed having the specific characteristic into a group of seeds for commercial use or sale so that each and every seed in the group has been monitored and determined to have the specific characteristic.

Seed groups or packages are used or sold based on the estimated quality or any other marketable specific characteristic of the seed group. The background art identifies a seed group as having a specific characteristic by testing a sample of the seed group and using the results obtained from the tested sample to identify the entire seed group with respect to that specific characteristic. For example, one type of specific characteristic which can be used to label a seed group is the vigor rating of the seed group. The vigor rating informs potential buyers how vigorous the seeds in the package are expected to be. The way of determining how vigorous the seed group or package is may be determined by testing a sample group from the seed group for a specific vigor indication such as germination. The sample group may be tested for vigor by testing each seed in the sample group for germination by measuring the seed's oxygen consumption at a specific time. According to the background art, the test results, based on the measured oxygen consumption of the sample group of seeds, are used to identify the vigor rating of the entire seed group from which the sample group was taken. Packages of seeds coming from the same group are then classified as having the same vigor rating.
More generally, a seed group may be classified using this method of classification for any type of desired seed classification which is based on testing for a specific characteristic desired by the seed market. Various methods exist which describe sampling a seed group for a specific characteristic to classify the entire seed group as having some classification level of the specific characteristic based on the tested sample group. Background art also describes sorting individual seeds based on their color, weight, or shape. However, nowhere in the background art is it known to analyze each and every seed after it has been imbibed or began to grow for an entire seed group, e.g. amounting to tens of thousands or millions of growth-induced seeds, for a specific characteristic in order to determine whether an individual seed subjected to a growth-inducing environment will be separated and transferred to be a part of a grouping of growth-induced seeds for commercial use or sale where every seed in the grouping or package has been subjected to growth and monitored and determined for a specific characteristic, and thus, can be marketed as such.
Background art also teaches sowing all the seeds of a group of seeds into a plant growing tray. After some time, the background art uses image analysis to identify which cells in the plant tray do not have good quality plants by monitoring for the leaves of the plant tray. The background art takes only an instantaneous image or one-time snapshot of the plant tray so that plant leaf growth per cell of the tray can be evaluated. A gap in the image is defined as an indication that a particular cell or cells in the plant tray contain a poor quality plant and need replacement. After such a determination, the background art removes the existing plant or lack thereof from that particular cell of the tray and places in that cell location an adequately growing plant. Background art does not provide analysis of a plant before the leafing stage starts. Also, the background art does not identify seeds that are more likely to germinate or seedlings that have germinated before placing the seed or seedling (or as used herein the broader term "germinated seed") in a cell of the tray. Such an earlier indication produces a better product to come to market sooner.

Method for grouping a plurality of growth-induced seeds for commercial use or sale based on testing of each individual seed


In a surface acoustic wave element 10, in which IDT electrodes 31 and 32, a grounding electrode 37, etc. are formed one main surface of a piezoelectric substrate 20, resistors 40 made of a semiconductor are provided to connection electrodes 38 that interconnect the respective electrodes. By forcing the charges generated in the IDT electrodes to move via the resistors 40, it is possible to provide a compact, highly reliable surface acoustic wave apparatus capable of preventing an electrostatic discharge damage in the IDT electrodes.

1. Field of the Invention
The present invention relates to a surface acoustic wave apparatus used in a mobile communications device, such as a mobile phone, a device mounted to a vehicle, a device for medical use, etc., and a communications device using the same, and more particularly to a surface acoustic wave apparatus and a communications device characterized by its structure such that prevents a discharge breakdown in an IDT (Inter Digital Transducer) electrode.
2. Description of the Related Art
A surface acoustic wave apparatus, such as a surface acoustic wave resonator and a surface acoustic wave filter, has been widely used in wireless communications devices of various kinds using a microwave band, devices mounted to a vehicle, devices for medical use, etc.
A conventional surface acoustic wave apparatus has a problem that a discharge breakdown occurs in an IDT electrode when exposed to an abrupt change in temperature due to the pyroelectric property of the piezoelectric substrate, which results in deterioration of the electric characteristic.
Hence, in order to prevent a discharge breakdown in the IDT electrode, improvements have been added to date.
For example, a structure in which paired comb-teeth-shaped electrodes forming the IDT electrode are connected to each other via a thin-film resistor has been known as the conventional surface acoustic wave apparatus for which the discharge breakdown preventive measure is taken.
Ta—SiO2 or Nb—SiO2 is used as a material of the thin-film resistor that electrostatically short-circuits the paired comb-teeth-shaped electrodes forming the IDT electrode.
Charges induced on the IDT electrode are forced to flow through the thin-film resistor, so that the thin-film resistor can prevent the occurrence of a discharge breakdown between the opposing comb-teeth-shaped electrodes.
The conventional surface acoustic wave apparatus described above, however, has the problems as follows.
When the resistor is connected, the electric characteristic of the surface acoustic wave apparatus readily deteriorates. In order to prevent such deterioration, it is necessary to keep a current flowing through the resistor during a normal operation small. It is therefore preferable that the resistor has a reasonably large resistance value.
The resistivity of the aforementioned material of Ta—SiO2 or Nb—SiO2 is as small as 200 mΩ·cm or less. Hence, in order to achieve a large resistance value, a sufficient length is necessary. For example, in order to achieve a resistance value of 1 MΩ, given 0.5 μm and 100 μm as the thickness and the width of the resistor, respectively, then a length as long as 25 mm is necessary.
The surface acoustic wave element employed in today's surface acoustic wave filter or the like used in a GHz band is of a size of approximately 1 mm×1 mm in length and width. Thus, an approximately 25-fold area is necessary in order to form the aforementioned resistor, which markedly increases the surface acoustic wave element in size.
By lessening the thickness and the width to the least possible level in order to reduce the resistor in size, for example, by lessening the thickness and the width to 0.5 μm and 1 μm, respectively, the length is shortened to 250 μm. It is thus possible to achieve a reduction in size. However, such an elongate resistor readily breaks due to a rise in temperature when a current flows and the resistor generates heats. When the resistor is heated to approximately 300° C. at the time of reflow soldering and a large current flows through the resistor as charges are induced by the pyroelectric effect, the resistor generates heats and the temperature rises further, which increases the possibility of a break in the resistor per se. Once the resistor breaks, there is no means for releasing the charges induced by the pyroelectric effect. It is thus no longer possible to prevent the occurrence of a discharge breakdown in the IDT electrode caused by a change in temperature.
Also, the material per se of the thin-film resistor has a problem in its heat resistance, and oxidation proceeds rapidly when the temperature rises, which raises a concern with respect to the reliability.
The invention therefore has an advantage to provide a compact, highly reliable surface acoustic wave apparatus.

Surface acoustic wave apparatus and communications device


A sweetness inhibited ingestible product and a process for inhibiting sweetness is disclosed. In this product and process an effective sweetness inhibiting amount of a compound selected from the group consisting of an alkali metal heptyl sulfonate, an alkaline earth metal heptyl sulfonate, an alkali metal octyl sulfonate, an alkaline earth metal octyl sulfonate and mixtures thereof is added to an ingestible composition to which a sweetener has been added.

1. Field of the Invention
The present invention is directed to a sweetness modifier. More particularly, the present invention is directed to a sweetness inhibitor, said sweetness inhibitor comprising a sweetness inhibiting amount of a compound selected from the group consisting of an alkali metal heptyl sulfonate, an alkaline earth metal heptyl sulfonate, an alkali metal octyl sulfonate, an alkaline earth metal octyl sulfonate and mixtures thereof.
2. Background of the Prior Art
Sweetness is one of the primary taste cravings of both animals and humans. Thus, the utilization of sweetening agents in foods in order to satisfy this sensory desire is well established. However, oftentimes sweetening agents are used in foods to provide functions other than sweetening. For example, sweetening agents can be utilized in foods as fillers, bulking agents, antimicrobial agents, freezing point depressants, stabilizers and the like.
In many instances, the utilization of a sweetening agent for purposes other than sweetening results in an excessively sweet taste. In those instances a modification of the formulation to reduce the sweetener level is required. This modification must, of course, occur without the concurrent reduction in the amount of sweetener utilized. Obviously, the sweetness level was incorporated to provide an additional function. Decrease in the sweetener will adversely effect this requirement.
One solution to this problem, known in the art, is the addition of a bitter or an acidic ingredient to the ingestible product to reduce sweetness perception. This solution has met with very little success in that the resultant ingestible product has an undesirable bitter or acidic taste.
Accordingly, in view of the above remarks it becomes readily apparent that it would be highly desirable to provide a sweetness inhibiting agent which, when added to ingestible compositions which are sweetened with naturally occurring, artificial or combinations of natural and artificial sweeteners, greatly reduce or eliminate unwanted or unpleasant sweet tastes thereby increasing the palatability of overly sweet products.
Alkyl sulfonates and salts thereof are known in the art. However, their utility has generally been limited to detergents and surfactants. Indeed, use of alkyl sulfonates as detergents and surfactants is usually restricted to alkyls of at least 10to 12 carbon atoms. The use of alkyl sulfonate salts of any number of carbon atoms as sweetness inhibitors is unknown in the art.


An apparatus for latching a tailgate to supporting structure of a vehicle generally includes a latch, a keeper, and a member for rotating the keeper relative to the latch. The member is rotatably supported by the tailgate such that the member is rotatable between at least a first position and a second position. The latch includes a latching surface, and the keeper includes a keeper surface configured for engagement with the latching surface. The latch is pivotably coupled to the vehicle supporting structure such that the latch is pivotable between at least a closed position and an opened position. To disengage the latching surface from the keeper surface, the member is rotated from the first position towards the second position, which, in turn, causes the keeper to rotate and to pivotally move the latch from the closed position towards the opened position.

People commonly drive pickup trucks and other vehicles that have tailgates. Usually, the tailgate includes a latching mechanism for latching the tailgate to the vehicle. The latching mechanism should prevent the tailgate from opening on its own, such as due to the impact of a shifting load against the tailgate. Tailgates may also have a lock for preventing someone from opening the tailgate.


A card-edge connector comprising a housing having a circuit-board insertion groove having both ends and formed in the wall face. A contact is fixedly inserted in the contact holes of the housing, so that an end of a circuit board is inserted in the contact. The circuit board is electrically connected to the contact when it is rotated to a position substantially perpendicular to the wall face and is held by the circuit-board holding members of the housing after the circuit board has been inserted slantwise in the circuit-board insertion groove. First lift preventing means and second lift preventing means are provided at the respective ends of the circuit-board insertion groove so as to prevent the circuit board from lifting from the housing. First and second locking members for preventing the circuit board from moving back and forth, leftward and rightward, are provided at the respective ends of the circuit-board insertion groove they have engaging step portions disposed so as to face the respective circuit-board holding members. Operating members are provided on the first and second locking members, for broadening a space between the first and second locking members to release the circuit board from the housing.

1. Field of the Invention
This invention relates to a card-edge connector which is detachably and electrically connected to a circuit board such as single memory modules.
2. Description of the Related Art
FIG. 8 shows an example of the conventional connectors for single memory modules.
When a printed board of a memory module (not shown) or the like is fully inserted in a printed board insertion groove 2 formed in that housing 1 of the connector which is made of an electrical insulator, engaging portions 8 for engaging the printed board are fitted in engaging portion receiving holes formed in the printed board. At the same time, both side portions of the printed board are held between engaging pieces 7 and locking pieces 4. Thus, the printed board is securely fixed to the housing 1. The connector is provided with a plurality of contact insertion holes 3 which are arranged adjacent to the printed board insertion groove 2 and in which contacts (not shown) are provided.
When the fixed printed board must be removed from the printed board insertion hole 2 by some reason, such very undesirable process is required that the user pushes outward both the stop locking pieces 4 with the nails or he uses a tool such as a driver to push the pieces 4 outward. Accordingly, the circuit board cannot be easily and safely removed from the connector.


A liquid consumption device includes a cartridge, a tank and a consumption portion. The cartridge includes a first storage chamber. The tank includes a second storage chamber and a semipermeable membrane. The semipermeable membrane covers the communication port. The semipermeable membrane is configured to block a liquid. The semipermeable membrane is positioned above a level of the liquid stored in the first storage chamber in a state where the level of the liquid stored in the first storage chamber becomes equal to the level of the liquid stored in the second storage chamber because of a flow of the liquid from the first storage chamber to the second storage chamber due to water head difference as a result of the connection of the cartridge to the tank. The first storage chamber of the cartridge to connected to the tank stores therein a maximum amount of liquid.

There is conventionally known, as an example of the liquid consumption apparatus, an inkjet recording apparatus including a main body and a cartridge. The main body includes a tank that can store ink therein and a head supplied with ink from the tank. The cartridge is detachably attached to the main body and is configured to supply ink stored therein to the tank.
In an inkjet recording apparatus disclosed in United States Patent Application Publication No. 2008/0204488A1, an atmosphere opening port is formed in a cartridge and a tank so as to allow an ink storage chamber defined in each of the cartridge and the tank to communicate with an atmosphere so as to supply ink from the cartridge to tank by water head difference.

Liquid-consumption apparatus having semipermeable membrane positioned in storage chamber of tank at position avoiding wetting


A continuously variable transmission (CVT) having air cooling channels built into the outer face of at least one, and preferably more than one, of the sheaves of the clutches. The CVT is comprised of a drive clutch having an input shaft, a driven clutch having an output shaft, and an endless belt disposed about the drive and driven clutches. Each clutch includes an axially stationary sheave and an axially moveable sheave. Each sheave includes a sheave body with an inner, belt-engaging face and an outer face. At least one of the sheaves on one of the clutches has a plurality of generally radially oriented fins extending axially from the outer face of the sheave body. The sheave further includes an outer plate defining with the fins and the outer face of the sheave body a plurality of generally radially oriented air cooling channels. Each channel preferably is open at its radially outward end and at its radially inward end, thereby permitting air to enter the radially inward open ends, pass radially along the channels and exit through the radially outward open ends, thereby helping to cool the sheave body.

Split sheave continuously variable transmissions (CVT's) are used in a variety of recreational type off-road vehicles such as snowmobiles, golf carts, all-terrain vehicles (ATV's), and the like. CVT's, as their name implies, do not require shifting through a series of forward gears, but rather provide a continuously variable gear ratio that automatically adjusts as the vehicle speeds up or slows down, thus providing relatively easy operation for the rider.
Typically CVT's are comprised of a drive clutch, a driven clutch, and an endless V-belt disposed about the clutches. The drive clutch includes a pair of opposed sheaves, which together define a generally V-shaped "pulley" within which the V-belt rides. The driven clutch is similarly configured from a pair of opposed sheaves.
The sheaves of the drive clutch are normally biased (such as by a spring) away from each other and the sheaves of the driven clutch are normally biased toward each other. When the drive clutch is rotating at or near idle speed, the V-belt rides near the center of the drive clutch and near the outer periphery of the driven clutch. As the drive clutch rotates faster, a centrifugal mechanism in the drive clutch pushes one of the the drive clutch sheaves toward the other, squeezing the V-belt and pushing it radially outwardly. Because the V-belt is essentially inelastic, the belt is pulled radially inwardly on the driven clutch, causing one of the driven clutch sheaves to move axially away from the other driven clutch sheave.
Significant frictional forces occur between the clutch sheaves and the V-belt. Friction results not only from the inward and outward movement of the V-belt between the sheaves of the drive and driven clutches, but also from the constant compression of the clutch sheaves against the V-belt. That is, in order to enable the belt to transfer torque from the drive clutch to the driven clutch without slipping, it is important that the sheaves of the clutches squeeze relatively hard against the side walls of the V-belt.
Consequently, the friction of the V-belt against the sheaves creates a significant amount of heat. If this heat is not adequately removed from the sheaves, the belt can become quite hot, reducing its useful life.
Accordingly, it would be advantageous to provide for the efficient removal of heat from the clutch sheaves. For this purpose, some clutches are provided with vanes or ribs on the outer surface of one or more of the clutch sheaves. Such vanes or ribs create air turbulance that tends to assist in cooling the sheaves. Such turbulance is somewhat inefficient in removing heat, however, and it therefore reduces the performance of the vehicle more than would be desirable. Accordingly, it would be advantageous to provide for more efficient cooling of the clutch sheaves without significantly degrading the performance of the vehicle.

Continuously variable transmission with clutch having enhanced air cooling


Described is an apparatus for monitoring nitric oxide delivery, wherein such apparatus comprises an indicator to inform a user of the apparatus when the flow of breathing gas rises above or falls below a predetermined level or range. Also described is a method of monitoring nitric oxide delivery, wherein the flow of breathing gas is measured and displayed. In some embodiments, an alert is provided when the flow of breathing gas rises above or falls below a predetermined level or range.

Nitric oxide (NO) is a gas that, when inhaled, acts to dilate blood vessels in the lungs, improving oxygenation of the blood and reducing pulmonary hypertension. Because of this, nitric oxide is provided in inspiratory breathing gases for patients with pulmonary hypertension.
Often, apparatuses used for nitric oxide delivery require a minimum flow of breathing gas in order to operate properly. As the flow rate of breathing gas decreases, it becomes difficult to accurately measure the breathing gas flow rate with current flow sensors and injector modules. In fact, some delivery apparatuses shut down automatically when there is not a sufficient flow of breathing gas to be measured accurately. When the supply of nitric oxide is abruptly cut off, patients may experience adverse effects such as worsening of partial pressure of oxygen in arterial blood (PaO2) and increasing pulmonary artery pressure (PAP).
Variability or irregularity in the flow from a support device such as a breathing gas delivery system may produce such low flow conditions, which may then result in shutdown of the inhaled NO delivery system or other NO delivery apparatus. Additionally, current inhaled NO delivery systems and other NO platforms cannot be used with gentle ventilation as gentle ventilation often requires lower flows then conventional ventilation. This can, again, result in shutdown of the delivery apparatus with resulting rebound hypertension and oxygen desaturation, which may result in adverse events as serious as death.
Therefore, there is a need to monitor and display the flow(s) from the NO delivery system to provide safe delivery of nitric oxide.

Apparatus and method for monitoring nitric oxide delivery

Mallinckrodt Hospital Products IP Limited


A multi-layer electrophotographic photosensitive member includes a conductive substrate and a photosensitive layer. The photosensitive layer includes a charge generating layer and a charge transport layer. The charge generating layer contains a charge generating material. The charge transport layer contains a hole transport material and a binder resin. The charge generating material contains a titanyl phthalocyanine that exhibits a main peak at a Bragg angle (2θ±0.2°) of 27.2° in a CuKα characteristic X-ray diffraction spectrum. The hole transport material contains a triarylamine derivative represented by generic formula (1). The hole transport material has a mass ratio of at least 0.30 and no greater than 0.55 relative to the binder resin in the charge transport layer. In general formula (1), R1, R2, l, and m are the same as those defined in the specification.

The present disclosure relates to a multi-layer electrophotographic photosensitive member, a process cartridge, and an image forming apparatus.
An electrophotographic photosensitive member is used as an image bearing member in an electrographic image forming apparatus (for example, a printer or a multifunction peripheral). Typically, the electrophotographic photosensitive member includes a photosensitive layer. The photosensitive layer can contain a charge generating material, a charge transport material (for example, a hole transport material or an electron transport material), and a resin (binder resin) for binding the charging generating material and the charge transport material together. An electrophotographic photosensitive member including a photosensitive layer such as above is called an organic electrophotographic photosensitive member. The photosensitive layer may include a charge generating layer having a charge generating function and a charge transport layer having a charge transporting function. An electrophotographic photosensitive member such as above is called a multi-layer electrophotographic photosensitive member.
One known example of the hole transport material for transporting holes that is applicable to a multi-layer organic electrophotographic photosensitive member is a tris(4-styrylphenyl)amine derivative.

Multi-layer electrophotographic photosensitive member, process cartridge, and image forming apparatus


A base station device includes: a processor circuitry configured to generate an indication signal; and a transmitter configured to transmit the indication signal to a terminal device. The indication signal indicates that there is no transmission of first data to be scheduled in a resource, and the resource may be assigned second data to be transmitted at low latency.

In recent years, in the 3rd Generation Partnership Project (3GPP) that is the standards organization related to radio communication systems, studies have been conducted on the fifth generation mobile communication system (5G). In the fifth generation mobile communication systems, services conforming to eMBB (enhanced mobile broadband), mMTC (massive machine type communications), URLLC (Ultra Reliability and Low Latency Communications), and the like are going to be started.
For example, eMBB responds to a service of transmission of large-volume data, such as moving image data. In contrast, URLLC responds to a service in which high-reliable and low-latency communication is needed, such as automatic operations or telesurgery. In order to implement these services, discussions are actively conducted on how to set communication parameters, such as Transmission Time Interval (TTI), that is the duration of time represented by, for example, flames or subframes.
Specifically, for example, when eMBB data and URLLC data are transmitted by using the same frequency band, it is conceivable to multiplex the eMBB data and the URLLC data by using time-division multiplexing or frequency-division multiplexing. At this time, because a low latency is needed for the URLLC data, a large reduction in TTI of URLLC compared to TTI of eMBB is studied.    Non-Patent Document 1: LG Electronics, "Handling URLLC in new RAT", 3GPP TSG RAN WG1 Meeting #86, R1-166886, August 2016    Non-Patent Document 2: NTT DOCOMO, INC., "On co-existence of eMBB and URLLC", 3GPP TSG RAN WG1 Meeting #86, R1-167391, August 2016    Non-Patent Document 3: Samsung, "Discussion on URLLC support in NR", 3GPP TSG RAN WG1 Meeting #86, R1-166759, August 2016
However, when eMBB data and URLLC data are multiplexed in the same frequency band, there is a problem in that the efficiency of using time and frequency resources is reduced. Specifically, because URLLC data is transmitted to control, for example, automatic operations, URLLC data to be transmitted is not always present and, accordingly, intermittent transmission occurs in URLLC data. Nevertheless, if time and frequency resources are fixedly allocated to URLLC data, the resources allocated to the URLLC data are wasted when URLLC data to be transmitted is not present.

Base station device, terminal device, and transmission method


Methods and systems for operating an industrial machine. One system includes a controller that includes an electronic processor. The electronic processor is configured to calculate an eccentricity of a center of gravity of the industrial machine with respect to a center of a bearing propelling the industrial machine and calculate a ground pressure associated with the bearing based on the eccentricity of the center of gravity. The electronic processor is also configured to set a maximum torque applied by an actuator included in the industrial machine to a value less than an available maximum torque based on the eccentricity of the center of gravity and the ground pressure.

Embodiments of the invention relate to controlling an industrial machine, such as a mining shovel, to prevent machine tipping.
During operation, industrial machines, such as mining shovels, can move back and forth (for example, during digging and loading operations). This movement can affect the center of gravity or eccentricity of the machine of the machine. Machine eccentricity is defined as the movement of the center of gravity of the machine from the nominal position as a result of operation practices or conditions. Depending on the extent of the eccentricity of the center of gravity, portions of the mining shovel contacting the ground surface (for example, crawler shoes) may lift off the ground. A particular machine may be associated with a center of gravity and an eccentricity that the machine must stay within to prevent the machine from tipping over or to prevent certain components from being subjected to extreme forces.
The balance of an industrial machine, such as a mining shovel, can also change depending on the grade or inclination of the surface supporting the machine. For example, some shovels have an assigned "dig slope limit," which is the maximum inclination of the shovel when digging. Although shovel operators are trained to manually identify when the dig slope limit is encountered or exceeded, an operator may inadvertently try to dig on an inclination that exceeds the dig slope limit, which could cause uncontrolled or unplanned movement of the machine, inadequate control of the machine, or machine tipping.

Systems and methods for controlling machine ground pressure and tipping


The disclosure relates to the making of the source and drain access regions of a field-effect transistor, these two regions being differentiated. The control region is defined by means of a three-layer mask of metal, resin and metal. A resin mask protects the drain access region, thus enabling the implantation of the source access region. After the dissolving of the resins, the drain access region is implanted.

1. Field of the Invention
The present invention relates to a method for the manufacture, by a self-alignment technique, of a transistor having differentiated access regions. More specifically, this manufacturing method, which makes use of three masking layers, enables the self-alignment of the control electrode metallization on both access regions which have different characteristics in terms of dimensions and doping level.
This method can be applied to all transistors, of the bipolar or unipolar type, but it is especially adapted to field-effect transistors and, above all, to transistors that are made on III-V materials such as GaAs and work in microwave applications.
2. Description of the Prior Art
For, in this field, the very small submicronic dimensions of the gate length most often make it necessary to resort to special techniques that make up for the inadequate precision of the masking means.
Self-alignment techniques are presently much used owing to their influence on manufacturing cost and on the improvement of performance characteristics. However, in the case of microwave transistors on III-V materials, for which it is necessary to control the gate, source and drain resistance values, respectively R.sub.G, R.sub.S and R.sub.D, there is no practical and economical technology that can be used to differentiate the doping levels on the source side and drain side, beneath the gate and in the access zones.
For example, the technique known as the "side wall" technique, which uses a mask deposited on a side wall of a pattern, permits n' implantations but is incompatible with n" implantations of L.sub.DD for the fine gates (n' and n" correspond to two intermediate doping levels between light doping n and heavy doping n.sup.+, and L.sub.DD is an abbreviation commonly used to designate a lightly doped drain region).
Or again, there is the technique of the metallic mask made of nickel that rules out a new masking after an over-etching of the gate and is incompatible with an etching of the mask on the source side.
Finally, the technique of the dielectric mask made of SiO.sub.2 is limited by the selectivity of etching and is not compatible with differentiated n' and n" dopings.

Method for the manufacture of a transistor having differentiated access regions


A expandable porous body constituted by a compressed apatite/collagen composite, which expands by water absorption, and a method for producing an expandable, porous apatite/collagen composite, which expands by water absorption, comprising the steps of freezing a porous apatite/collagen composite impregnated with a liquid in a compressed state, and drying it.

Bone defect portions generated by bruise or illness are now treated by implanting patients' autogenous bones, similar bones provided by others, artificial bones made of metals such as titanium or hydroxyapatite ceramics, etc. Hydroxyapatite ceramics having bone conduction not achieved by conventional metals, polymers or alumina ceramics and directly bonding to bones have been gradually finding wider use as bone-repairing materials substituting autogenous bones in various fields such as oral surgery, neurological surgery, otorhinolaryngology, plastic surgery, etc., since their commercialization. However, artificial bones made of ceramics such as hydroxyapatite are hard and brittle, disadvantageous in difficulty in handling during operation. To solve such problems, apatite/collagen composites having sponge-like elasticity were developed for easy handling. However, filling bone defect portions having complicated shapes and different sizes is still difficult even with such materials, resulting in the likelihood of insufficient filling.
U.S. Pat. No. 5,776,193 discloses a porous, biodegradable, three-dimensionally fixed matrix for the replacement of bone comprising a bound network of water-insoluble, mineralized biopolymer (fixed phosphoric acid calcium) fibers, and a water-soluble binder (soluble collagen, etc.). However, this three-dimensionally fixed matrix fails to solve the above problems.

Expandable, porous apatite/collagen composite, and its production method


A thermal protection system for an electrical system having a control system and an electrical outlet connected to an electrical power source includes an electrical cord having a plug attached thereto that is configured to electrically connect with the outlet. A non-contact temperature sensor is disposed within the plug and configured to measure a temperature of the outlet. The temperature sensor is in communication with the control system and configured to send a signal to the control system to effect a reduced flow of current through the outlet and plug when the temperature sensor indicates that a predetermined condition is met.

With the advent of electric and hybrid electric vehicles, vehicle operators are looking for convenient ways to charge their vehicles, and in particular, more places to charge their vehicles. This has led to the development of portable charge-cord sets that make it possible for the vehicle to be charged at various locations, but as a result, the vehicle operator may be using an electrical outlet of unknown quality. Because an electric vehicle may draw a relatively large amount of current—e.g., 13 amps (A) from a standard 120 volt (V) outlet—when it is charging, a poor quality outlet or circuit to which the outlet is connected, could lead to the outlet overheating.
In the case where an electrical outlet is overheating during a vehicle charging, the plug on the end of the charge-cord may or may not also reach an unacceptably high temperature. Even if some of the heat transfers from the outlet to the plug, the heat transfer will largely be conductive, and inefficient. Therefore, measuring the temperature of the cord, or even the plug on the end of the cord, will likely not provide a good indicator of the temperature of the outlet. Further complicating the issue is that a vehicle may be charged in a relatively cold ambient environment, such as in a garage. In such cases, the plug on the end of the charge-cord, may remain very cool throughout the charging process, while the electrical outlet becomes unacceptably hot. Therefore, a need exists for a thermal protection system for an electrical device, such as an electrical outlet, but which resides within the device over which the vehicle operator has control—e.g., a charge-cord set.

This patent is subject to a terminal disclaimer.

Thermal protection system for electrical device


A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride, and optionally an intermediate layer between the base substrate and the thin film of single crystal, which optionally comprises an intermediate layer between the base substrate and the thin film of single crystal.

1. Field of the Invention
The present invention relates to a thin film single crystal substrate which is useful in the production of a semiconductor. More particularly, it relates to a thin film single crystal substrate comprising a single crystal diamond base and at least one film of a single crystal material formed thereon.
2. Description of the Prior Art
Some of materials having a crystalline structure is useful as materials of electric elements. For example, silicon carbide has been studied as a material for a heat and environment resistant element or a light-emitting element since it has several crystal structures and band gap of 2.2 to 3.3 eV depending on the crystal structure, its heat conductivity is as large as 4.9 W/cm.K, its maximum electron mobility is confirmed to be 1,000 cm.sup.2 /V.sec., and it is possible to control p-type and n-type valence electrons.
The crystal structures of silicon carbide are roughly classified into an .alpha.-type and a .beta.-type. Since silicon carbide of the .alpha.-type hexagonal system (6H) has a large band gap of about 2.9 eV, it is believed that it can be used as a material for a blue light-emitting element. Silicon carbide of the .beta.-type cubic system (3C) has a large electron mobility, it is investigated as a material for an environment resistant element.
Since a silicon carbide single crystal has a high melting point and is chemically stable, it is difficult to produce a large single crystal with good quality which can be used as a semiconductive material. Therefore, the single crystal of silicon carbide is formed by growing it on a silicon single crystal or sapphire in a gas or liquid phase (cf. Japanese Patent Kokai Publication Nos. 83588/1978 and 146299/1978).
However, the silicon single crystal has various drawbacks. For example, since it has a band gap of 1.1 eV which is smaller than that of the silicon carbide single crystal, it has smaller resistivity at high temperature. It has a low melting point and a small thermal conductivity of 1.5 W/cm.K). Because of these characteristics of silicon carbide, when the silicon carbide single crystal is grown on the silicon single crystal, the advantages of the latter as the heat resistant semiconductive material are greatly impaired. Therefore, the silicon carbide single crystal grown on the silicon single crystal is used by removing the latter with an acid, but the remaining thin film of the silicon carbide has a thickness of several ten .mu.m and is easily cracked or strained, which deteriorates its handling properties.
When the silicon carbide single crystal is used without removing the silicon single crystal, elements should be separated by applying reverse bias at a p-n junction formed in the silicon carbide layer. This makes the production method complicated.
Although sapphire is an insulating material up to high temperature and thermally stable, it has some drawbacks such as a small coefficient of thermal conductivity of 0.11 W/cm.K and a large coefficient of thermal expansion of 7.8.times.10.sup.-6 /K.
In addition to the above proposals, it may be possible to grow a thin film single crystal of GaAs on the silicon single crystal or to grow the silicon single crystal on sapphire. However, these techniques have the same problems as above.


A multilayer piezoelectric device includes long internal electrodes and short internal electrodes which are arranged so as to extend from a pair of opposing side surfaces of a piezoelectric substrate towards the corresponding side surfaces opposite to the side surfaces from which they extend, and so as to be alternately stacked in the piezoelectric substrate. Active portions are located at portions where the long internal electrodes and the corresponding short internal electrodes are stacked. Further, a first external electrode, connected to the short internal electrodes, is electrically connected to the side surface near the active portions, and a second external electrode, connected to the long internal electrodes, is electrically connected to the side surface distant from the active portions. The first external electrode extends from the side surface of the piezoelectric substrate near the active portions, onto a main surface, and to a location adjacent to the side surface distant from the active portions, while the second external electrode extends onto the main surface so as to be disposed on left and right sides of locations at the first external electrode that are adjacent to the side surface of the piezoelectric substrate distant from the active portions.

1. Field of the Invention
The present invention relates to a multilayer piezoelectric device and a piezoelectric actuator including such a multilayer piezoelectric device.
2. Description of the Related Art
In general, a piezoelectric actuator which makes use of a piezoelectric effect is sometimes used in a print head of an inkjet printer. As shown in FIG. 8, a piezoelectric actuator 1o has a piezoelectric property which causes it to be displaced in what is called a d31 direction, that is, a direction that is perpendicular to the thickness direction of a piezoelectric device. A portion of the bottom surface of the piezoelectric actuator 1o is adhered to a fixation substrate 2, and a pressure-generating chamber 3 is disposed in contact with the end portion of the piezoelectric actuator 1o that is not adhered to the fixation substrate 2. One end of a signal-inputting flexible printed circuit board (hereinafter referred to as xe2x80x9cFPCxe2x80x9d) 4 is connected to the top surface of the piezoelectric actuator 1o. Accordingly, when a signal is input from the FPC 4, the piezoelectric actuator 1o is displaced in a direction that is perpendicular to the thickness direction thereof, causing pressure to be exerted onto ink inside the pressure-generating chamber 3, so that the ink is discharged outside the pressure-generating chamber 3.
The structure shown in FIGS. 9 and 10 has been known as a structure of a multilayer piezoelectric device 6o included in a piezoelectric actuator 1o. (For example, refer to Japanese Unexamined Patent Application Publication No. 11-10875.)
More specifically, the related multilayer piezoelectric device 6o includes a rectangular piezoelectric substrate 7. Short internal electrodes 8 and long internal electrodes 9, having different lengths, are arranged so that the short internal electrodes 8 extend from a side surface 7b towards an opposite side surface 7c and the long internal electrodes extend from the side surface 7c to the opposite side surface 7b. In addition, the short internal electrodes 8 and the long internal electrodes 9 are alternately stacked in the piezoelectric substrate 7. The side surfaces 7b and 7c are opposite each other in the direction of a short side of the piezoelectric substrate 7. In other words, in the direction of a long side (longitudinal side) of the piezoelectric substrate 7, the electrodes 8 and 9 have lengths that are substantially equal to the overall width of the piezoelectric substrate 7. On the other hand, in the direction of a short side of the piezoelectric substrate 7, the short internal electrodes 8 are shorter than the long internal electrodes 9. Active portions 10 which are displaced in a direction that is perpendicular to the lamination direction are located at the portions where the electrodes 8 and the corresponding electrodes 9 overlap. Therefore, as shown in FIG. 10, the active portions 10 are adjacent to the left side surface 7b of the two side surfaces 7b and 7c that are opposite each other in the direction of a short side of the piezoelectric substrate 7, and have shapes that are asymmetrical in the horizontal direction.
Each of the short internal electrodes 8 is in a drawn-out state at the side surface 7b of the piezoelectric substrate 7 near the active portions 10, and each of the long internal electrodes 9 is in a drawn-out state at the side surface 7c of the piezoelectric substrate 7 distant from the active portions 10. A first external electrode 13o and a second external electrode 14o are electrically connected to the drawn-out short internal electrodes 8 and the drawn-out long internal electrodes 9, respectively.
The first external electrode 13o extends from the side surface 7b of the piezoelectric substrate 7 near the active portions 10 towards the side surface 7c and distant from the active portions 10 by extending onto a main surface 7a, and terminates before reaching the side surface 7c. On the other hand, the second external electrode 14o extends from the side surface 7c of the piezoelectric substrate 7 and distant from the active portions 10 towards a location which opposes an end portion of the first external electrode 13o at a predetermined interval d therefrom by extending onto the main surface 7a. The certain interval d between the first and second external electrodes 13o and 14o is provided because it is necessary to electrically isolate them.
As described later, when forming the piezoelectric actuator 1o using the multilayer piezoelectric device 6o, electrical conductors on the FPC 4 need to be electrically connected to the first and second external electrodes 13o and 14o. Therefore, an area which extends a predetermined distance of L4 from the side surface 7c of the piezoelectric substrate 7 and distant from the active portions 10 is provided as a predetermined soldering portion 16o required for soldering.
Such a multilayer piezoelectric device 6o and the piezoelectric actuator 1o including the multilayer piezoelectric device 6o, are formed, for example, in the following way.
In order to form the multilayer piezoelectric device 6o, as shown in FIG. 11, three types of green sheets 31, 32, and 33 are provided. In other words, there are provided the green sheets 31 which have electrically conductive patterns 41, which define the short internal electrodes 8, disposed thereon. The green sheets 32 which have electrically conductive patterns 42, which define the long internal electrodes 9, disposed thereon, and the green sheets 33 which do not have any electrically conductive patterns formed thereon, are also provided. These green sheets 31, 32, and 33 are produced by forming piezoelectric materials, such as PZT materials, into rectangular shapes in plan view. The electrically conductive patterns 41 and 42 are formed by screen printing electrically conductive paste whose main component is, for example, silver (Ag).
After alternately and sequentially placing upon each other a predetermined number of each of the green sheets 31 and 32 having the corresponding electrically conductive patterns 41 and 42 formed thereon, the green sheets 33 are disposed on the topmost and bottommost portions of the resulting layered structure. Then, all of these sheets 31, 32, and 33 are press-bonded all together along the lamination direction, and baked. After the baking, the first and second external electrodes 13o and 14o are formed by evaporation. Thereafter, by polarizing the piezoelectric substrate 7, the multilayer piezoelectric device 6o including the active portions 10 at the portions where the short internal electrodes 8 and the corresponding long internal electrodes 9 are stacked is produced.
Next, using the multilayer piezoelectric device 6o, formed in the above-described manner, the piezoelectric actuator 1o is formed as shown in FIG. 12. First, the multilayer piezoelectric device 6o is adhered to the fixing substrate 2 with an adhesive so that its active portions 10 do not overlap the fixing substrate 2.
Then, using a dicing saw, cuts of predetermined sizes are formed at predetermined pitches along the longitudinal direction of the multilayer piezoelectric device 6o from the side surface 7b towards the side surface 7c in order to form slits 21. As a result, movable portions 22o which can be separately driven are formed between the slits 21. Further, cuts are formed in the first external electrode 13o consecutively with the corresponding slits 21 in order to form shallow grooves 23, so that the first external electrode 13o is electrically isolated from each movable portion 22o.
Next, the FPC 4 is soldered onto the predetermined soldering portion 16o, so that the electrical conductors on the FPC 4 are electrically connected to each of the divided first external electrode 13o portions and the second external electrode 14o. For example, signal-input-side electrical conductors on the FPC 4 are connected to the corresponding divided first external electrode 13o portions, and a ground-side electrical conductor is connected to the second external electrode 14o. Pressure-generating chambers 3 are separately disposed at the corresponding movable portions 22o of the piezoelectric actuator 1o. Accordingly, by separately inputting signals to each of the divided first external electrode 13o portions, the movable portions 22o are separately driven, so that ink from each of the pressure-generating chambers 3 is separately discharged.
As mentioned above, in the multilayer piezoelectric device 6o included in the piezoelectric actuator 1o, it is necessary to electrically connect the FPC 4 to both electrodes 13o and 14o while the end portions of the first and second external electrodes 13o and 14o at the main surface 7a oppose each other at the predetermined distance d from each other. Therefore, in the related multilayer piezoelectric device 6o, a relatively large length L4 extending from the side surface 7c of the piezoelectric substrate 7 and distant from the active portions 10 is required as the predetermined soldering portion 16o. As a result, the predetermined soldering portion 16o is disposed close to the active portions 10.
In producing the piezoelectric actuator 1o, when the FPC 4 is soldered onto the predetermined soldering portion 16o, the FPC soldering location is close to the active portions 10, so that, not only is smooth expansion and contraction of each of the movable portions 22o prevented, but also the following problems arise due to transmission of vibration, produced by displacement of the movable portions 22o, to other portions through the FPC 4.
More specifically, when a signal Vp having an applied voltage waveform such as that represented by waveform a of FIG. 13 is input to a predetermined movable portion 22o for a period of time of t1 to t2, if the FPC-4-soldering location is sufficiently separated from the active portion 10, the vibration is damped within a short period of time, as shown by waveform b of FIG. 13. In contrast, when the FPC-soldering location is close to the active portion 10, the vibration damping time becomes longer, as shown by waveform c of FIG. 13. As a result of this, ink discharge becomes unstable, thereby causing reduced image quality.
In addition, when the soldering location is close to the active portion 10, the active portion 10 loses its polarization property because it is affected by heat produced during soldering, thereby causing, for example, the problem that active portion 10 becomes unable function piezoelectrically.
To solve these problems, the predetermined soldering portion 16o may be moved further away from the locations of the active portions 10 by, for example, making long a distance L5 from the side surface 7b of the piezoelectric substrate 7 near the active portions 10 to the predetermined soldering portion 16o in the multilayer piezoelectric device 6o. However, when this is done, an overall length L3 of the piezoelectric substrate 7 in the direction of a short side thereof becomes long so that, not only is it impossible to reduce the size of the entire multilayer piezoelectric device 6o, but also, for example, costs of the multilayer piezoelectric device 6o are increased. Therefore, it is not advisable to make the overall length L3 long.
In order to overcome the above-described problems, preferred embodiments of the present invention provide a multilayer piezoelectric device which is greatly reduced in size and which has an excellent piezoelectric property as a result of making it possible to provide a sufficient distance between an active portion and a soldering location when a piezoelectric actuator is constructed. In addition, other preferred embodiments provide a piezoelectric actuator including such a novel multilayer piezoelectric device.
According to a preferred embodiment of the present invention, a multilayer piezoelectric device including a substantially rectangular piezoelectric substrate, long internal electrodes, and short internal electrodes. The long internal electrodes and the short internal electrodes have different lengths and arranged so that the long internal electrodes and the short internal electrodes extend from a pair of opposing side surfaces of the piezoelectric substrate towards the corresponding side surfaces of the piezoelectric substrate opposite to the side surfaces from which the long internal electrodes and the short internal electrodes extend. The long internal electrodes and the short internal electrodes are also arranged such that the short internal electrodes and the long internal electrodes are alternately stacked inside the piezoelectric substrate. The multilayer piezoelectric device further includes active portions which are disposed at portions where the long internal electrodes and the corresponding short internal electrodes are stacked, and which are displaced in a direction that is substantially perpendicular to a direction in which the long internal electrodes and the corresponding short internal electrodes are stacked, a first external electrode which is electrically connected to the short internal electrodes at the drawn-out side surface, and a second external electrode which is electrically connected to the long internal electrodes at the drawn-out side surface. The first external electrode and the second external electrode are separately formed on a surface of the piezoelectric substrate. In addition, the first external electrode extends from the side surface of the piezoelectric substrate near the active portions, extends onto a main surface, and extends to a location adjacent to the side surface distant from the active portions where the long internal electrodes are drawn out. The second external electrode extends onto the main surface so as to be disposed on left and right sides of locations at the first external electrode that are adjacent to the side surface of the piezoelectric substrate distant from the active portions.
The second external electrode may be arranged so as to extend onto the main surface from the side surface of the piezoelectric substrate distant from the active portions. Alternatively, the second external electrode may be arranged so as to extend onto the main surface from a side surface of the piezoelectric substrate that is substantially perpendicular to the side surface of the piezoelectric substrate distant from the active portions.
According to preferred embodiments of the present invention, unlike a related multilayer piezoelectric device where the end surfaces of the first and second external electrodes are face and oppose each other, the multilayer piezoelectric device of the present invention is constructed so that the second external electrode is disposed on both the left and right sides of locations at the first external electrode that are adjacent to the side surface distant from the active portions. Therefore, it is possible to dispose each of the first and second external electrodes adjacent to the side surface of the piezoelectric substrate and distant from the active portions. Therefore, the location where the FPC is to be soldered no longer needs to be situated very far from the side surface of the piezoelectric substrate distant from the active portions, so that the location where the FPC is to be soldered can be sufficiently separated from the active-portion-formation locations. As a result, comparing the multilayer piezoelectric device of preferred embodiments of the present invention with a related multilayer piezoelectric device, the overall length of the piezoelectric substrate in the direction of a short side thereof can be made shorter. In addition, the entire multilayer piezoelectric device of preferred embodiments of the present invention can be made much smaller than a related multilayer piezoelectric device.
According to another preferred embodiment of the present invention, a piezoelectric actuator wherein, by forming slits, extending from the side surface near the active portions towards the side surface opposite thereto of the multilayer piezoelectric device of any one of the preferred embodiments of the present invention described above, at a predetermined pitch along a direction that is substantially perpendicular to the direction of extension of the slits, separately drivable movable portions are provided between the corresponding slits, and an electrical conductor on a flexible printed circuit board is connected to the first external electrode, divided by the slits, and the second external electrode.
In the piezoelectric actuator, since the FPC-soldering location is disposed away from the active portions, the movable portions expand and contract smoothly, and transmission of vibration, produced by displacement of the movable portions, to other portions through the FPC is reliably prevented. Therefore, vibration is damped within a short period of time, so that ink is stably discharged, thereby providing excellent image quality. In addition, since the soldering portion is disposed away from the active portions, there is no possibility of the polarization properties of the active portions being deteriorated by heat produced during soldering, so that stable piezoelectric properties are provided.
Other features, elements, characteristics and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments thereof with reference to the attached drawings.

Multilayer piezoelectric device and piezoelectric actuator formed using the same