A fabrication station (117) suitable for use mobile unit (1) or as stand alone unit for fabricating solid surface construction materials is provided, as is a method of use therefor. The fabrication station is equipped with climate control units (23, 23a, 123) fabrication equipment (24, 124) and other environment control equipment. Therefore, solid surface construction materials can be fabricated onsite or at a remote fabrication shop. In the fabrication process according to the present invention, dimensional information is laid out directly onto the solid surface material stock. The fabrication station can include an adjustable support (124a) that supports each slat support channel portion so that the position of the slat support channel portions is adjustable relative to the support wall and one another to provide a fine adjustment. The fabrication station can also include removable slat portions 124c to accommodate different shapes of solid surface material to fabricate. The removable slat portion can have an angled upper surface and or include a plurality of spaced holes, a clamp, a hook or a longitudinal groove. The base (110) from which the support wall (102) extends can have wheels (110W) to make the unit mobile. The fabrication station can also include a timer switch (123t) for switching the heat supply units (123) on and off independently of other heat supply units and a photoelectric switch (142) for selectively opening and closing the exhaust vents.

1. Field of the Invention
The present invention relates to a solid surface material fabrication station, a mobile fabrication unit for use in fabricating solid surface materials, especially construction materials and a method of fabricating solid surface materials.
2. Description of Related Art
In recent years solid surface construction materials have become increasingly popular, especially for use as a countertop surface. The term xe2x80x9csolid surfacexe2x80x9d construction material refers to a number of different products, such as CORIAN by Dupont, FOUNTAINHEAD, and other synthetic materials as well as solid surface veneer such as NUVEL by Formica and similar products sold by Wilson Art.
The fabrication of such products may be tightly controlled, for example. Dupont, for example, sells CORIAN only to certified fabricators who have fabrication shops that meet certain strict standards set by Dupont.
However, the traditional system and method for fabricating such sheet materials typically takes several days to complete.
First, a crew of people must take the necessary measurements for a particular job, such as measuring out a countertop. This typically involves a process referred to as xe2x80x9ctemplating,xe2x80x9d namely, using particle board, plywood, cardboard or other disposable material, and creating a template, or a pattern, for cutting the solid surface material stock as required. The template is then taken back to an off site fabrication shop where the solid surface material is fabricated accordingly. The thus-fabricated solid surface material is then transported back to the worksite and installed. Often, the above-described templating process is relatively inaccurate, so measuring errors and the like occur, and must be compensated for in an additional onsite final fitting process. Because of this, the entire process typically requires more than one week to complete. This is highly problematic from the fabricator""s perspective in terms of staffing and work flow. Moreover, from the customer""s point of view, the large amount of time and labor required is inconvenient and, indeed, disruptive. For these reasons, it is believed that the conventional fabrication process may restrict, or even discourage, customers from purchasing and installing solid surface construction materials, such as CORIAN.
It is therefore an object of the present invention to develop a system and method for faster and more efficient fabrication of solid surface materials. This objective is achieved by providing a fabrication station, mobile fabrication system and a fabrication process according to the present invention. The fabrication station can be used as a stand alone unit or as a mobile fabrication system.
The mobile fabrication system of the present invention involves a mobile unit that is either self-propelled (such as a stepvan or panel truck) or adapted to be pulled by a vehicle, such as a trailer pulled by pickup truck or the like. The mobile unit according to the present invention characteristically contains or is otherwise provided with all of the equipment necessary to fabricate solid surface construction materials. To provide a satisfactory work environment the mobile unit must have adequate lighting, ventilation, climate control, power supply and work surfaces. The present inventor has found that in the context of solid surface fabrication there are certain minimum requirements for each of these characteristics.
Fabrication of solid surface materials in a confined area presents several technical challenges. One significant example, is the need to provide adequate ventilation while maintaining climate control, at least in localized areas. More specifically, fabricating solid surface materials entails a great deal of cutting and sanding, which generates significant amounts of dust. This dust must be removed from the work area. On the other hand, solid surface fabrication also requires climate control, particularly in the area where the solid sheet is being fabricated. The fabrication process is hampered if the area around the sheet material is too hot or too cold.
To remove the dust generated from fabrication from the air within the work area, large volumes of air must be moved. But, moving large volumes of air makes it difficult to control temperatures. The present invention addresses these conflicting requirements by providing high volume ventilation and climate control equipment and by locating such equipment to optimize the work environment. Specifically, ventilation equipment is provided in the area above the solid sheet material and climate control equipment is provided in the area below the solid sheet material.
The process according to the present invention involves the unique step of measuring out dimensional information directly onto the solid surface material itself, without an intermediate template as discussed above. This is made possible because the mobile unit can be brought directly to a worksite. Therefore, the solid surface material stock can be brought to the worksite and can be fabricated on location, rather than needing to bring a temporary, and frequently inaccurate, template back to an offsite shop where fabrication is carried out, as in the known art. This increases the accuracy and speed of fabrication.
The present invention also provides an integrated fabrication station designed for use as a stand alone unit or as an integrated part of a mobile fabrication trailer that includes features designed to improve work conditions on discrete sections of the work piece. With this fabrication station design, it is possible to cool the material, sand the material, put the material over, rout it, cut it, everything with all the necessary lighting on a single fabrication station. The fabrication station also provides task lighting, area lighting, ventilation air coming in over the fabricator""s head, and spaced exhaust vents sucking the dust out right off of the surface of the work piece. At the same time, the discrete sections of the underside or the entire underside of the surface of the work piece can be heated, since it is known that the adhesive material usually dries quickly with heat.
The improved fabrication station design is well suited for use in a mobile fabrication trailer, but the fabrication station construction of the present invention is useful in other environments since certain conditions apply to all solid surface fabrication. For instance, the processing of the solid surface material with adhesives is speeded up and made easier if the fabricator can control the atmosphere around the solid surface material. It is not practical to heat warehouses or shops to the level needed to expedite drying and, even it were, doing so would create an uncomfortable work environment. Thus, the discrete heating feature of the present invention is highly desirable.
Moreover, it is always desirable to prevent the dust generated during fabrication from interfering with the fabricator""s breathing. Likewise, it is desirable to heat and light the material and have the fabricator""s tools located near the solid surface material workpiece. Because climate-type conditions (particularly temperature and air quality) can be controlled in discrete regions of the work piece using the fabrication station of the present invention, the fabrication station does not have to be enclosed. There are, however, advantages to operating in a confined space. For example, it is easier to control dust in an enclosed environment like a trailer. Thus, the present invention also relates to a fabrication station construction that is adaptable to both mobile fabrication and use in a factory or workshop environment.
In accordance with one embodiment of the fabrication station that is intended for use in a factory or shop setting, the fabrication stations are stand alone units that include two fabrication work positions arranged back to back. The fabrication stations can also be constructed as fabrication station modules that have a flat back so that the fabrication stations can be arranged in variety of configurations from back-to-back to along an interior or exterior wall to xe2x80x9ccubiclexe2x80x9d arrangement. The stations may be provided with wheels to facilitate relocation. In another embodiment, the stand alone unit has a fabrication station on one side and storage on the other side. In addition, without the dimensional constraints imposed by designing the fabrication stations for use in a trailer, other designs of fabrication stations become practical. For example, the fabrication station may be lengthened to include storage space as an extension of the fabrication station. In the context of a trailer, however, the fabrication station may be integrated into the structure of the trailer or simply a stand alone unit mounted into a trailer.
The fabrication station preferably includes vertically arranged longitudinally extending continuous chambers or plenums that are hollow to provide forced air passages and also provide routing for all the utilities needed. The utilities and forced air (hot, cold, fresh etc) can be generated by known devices proximate the fabrication station or supplied from known remote sources depending on the environment in which the fabrication station is used. The top of the chambers can be used as a shelf and the bottom side can be used to support task lighting that is illuminating the surface of the work piece. The lower chambers are preferable used to support adjustable rods that support slat support channel of the slat support. All the utilities (e.g., compressed air for pneumatic tools, vacuum supply, fuel for heat exchangers, electrical wiring for the electrical outlets, fans, heaters, lights and coolers) can be provided within the plenum or chambers. The utilities and forced air (hot, cold, fresh etc) can be generated by known devices proximate the fabrication station or supplied from known remote sources depending on the environment in which the fabrication station is used. The hollow chamber is screwed directly into a trailer or fabrication station wall and is preferably a fiberglass component that is very rigid and durable.
The present invention also provides ventilation air intake vents and air exhaust vents for exhausting dust ridden arranged along the fabrication station so as to create a circulating air barrier (air curtain) between the fabricator""s face and the surface of solid sheet material that is being worked on. From a fabricator or an employee or worker""s vantage point, ventilation air is brought in over the user""s head to replace the air that is being drawn through the exhaust vents from the counter top near the fabricator""s hands and waistline.
The present invention also provides a table saw assembly that is useful in the context of a mobile trailer. In particular, the table saw assembly is swingably supported for compact storage between spaced fabrication stations, but is easily swung from its storage position to a horizontal ready-to-use position during those rare, but indispensable times during fabrication when the fabricator needs the table saw.
The fabrication station of the present invention preferably includes a bench adjustment rod and bench slat system that eliminates much of the structural steel in fabrication trailers. The station includes a single steel track that runs across the support wall of the fabrication station. The track slidably supports one of the two ends of a plurality of spaced slat support channels so that the spaced slat support channels can slide along the length of the fabrication station, but are maintained in alignment on a common plane that it essentially horizontal. An adjustment rod is provided to further support and maintain the alignment of each of the spaced slat support channels. The adjustment rod is also supported in a track (preferably attached to or formed in the fiberglass hot air plenum or chamber) so that the adjustment rod can slide with the spaced slat support channel that it supports. The adjustment rod allows fine adjustment of the position of the spaced slat support channels. By virtue of this construction, the spaced slat support channels provide a support that is suitably flat at all times.
The fabrication station further includes removable slat portions that are supported by the spaced slat support channels. The removable slat portions may be made of a sacrificial material. In accordance with the present invention, a variety of removable slat portions can be supported within the channels to accommodate different needs. For example, long or short removable slat portions may be used and angled removable slat portions may be used. Removable slat portions that support longitudinal slats may be used to provide a stiff support. Specialized removable slat portions can also be used. For example, the removable slat portions could be provided with a hook clamp to hold certain work pieces. The removable slat portions could include a series of holes running parallel to the top of the slat to allow the user to hook something in the hole and lock the workpiece down. The removable slat system thus offers myriad possibilities for supporting workpieces all with the assurance that the relative levelness in relation to the wall is consistent.
The fabrication station of the present invention also includes switches designed to simplify operation of the various components within the station. The heat supply units are, for example, connected to switches that may be operated on timers. Photo electric switches are provided near other vents so that they can be turned on or off by simply placing a hand near the vent.
These and other objects and novel features of the present invention will become more apparent from the following detailed description, taken in conjunction with the accompanying drawings.


The invention relates to a gel composition comprising: a) a carboxy polymethylene polymer; b) glycine; c) a source of calcium ions; and d) water. The invention also extends to a dry composition comprising the aforementioned components a), b) and c). The gel compositions of the invention are useful for the prophylaxis and treatment of epistaxis. The gel compositions can be easily administered to the nasal cavity and do not require removal after use.

Epistaxis (nosebleed) is very common. Although in most cases the symptoms are temporary and non-recurrent, some patients experience recurring and severe symptoms. The most common method of treating severe epistaxis is by cauterization of the bleeding vessel. When the source of bleeding cannot be seen, intranasal packing using cotton tampons or inflatable rubber balloons may be employed, but such methods cause inconvenience and discomfort for the patient. The cotton tampons typically have a width of 2 cm and a length of 40-100 cm. They are pressed into the nose to stop bleeding by applying pressure to the nasal mucosa and may stay in place for 1-4 days. Inflatable rubber balloons also act by applying pressure to the nasal mucosa, and may remain in place for 1-2 days. Whether tampons or balloons are employed, either is painful when inserted, interferes with normal breathing and may lead to local infection. There is a need for treatments which do not have such disadvantages.
WO 01/00218 describes a nasal spray formulation which includes Dead Sea salt in a concentration of about 0.5 to 5 g/l of sterile aqueous solution, contains a buffer and is essentially free of noxious, organic impurities. The formulation is said to be for use in treating rhinitis, sinusitis, epistaxis and post-surgical irritation, but no trials relating to epistaxis are reported.
Different nasal gel applications and vasoconstrictors have been studied experimentally, see Bende et al, Acta Otolaryngol (Stockh) 88, 459-461 (1979); Bende et al, Acta Otolaryngol (Stockh) 102, 488-493 (1986); and Bende et al, Acta Otolaryngol (Stockh) 110, 124-127 (1990). Earlier clinical investigations indicated that fibrinolysis plays a role in recurrent epistaxis, see Petruson et al, Acta Otolaryngol (Stockh) suppl. 317 (1974). Tibbelin et al, ORL (Basel) 57, 207-209 (1995) explored the haemostatic effect of local application of a tranexamic acid gel and a placebo gel in a randomized, double-blind, multicentre clinical trial. Both gels were found to have a beneficial effect, and surprisingly the placebo gel was found to be slightly (though not significantly) better than that containing the tranexamic acid (an inhibitor of the fibrinolytic system).


Provided is a method for assisting provision of EC abroad, and for encouraging cross-border EC by making delivery abroad easier. The method includes the steps of: sending, by the assisting server 100, display information of at least one of articles included in article information for an existing EC site to a user terminal 120 of a foreign user (S201); receiving, by the assisting server 100, a notice that a displayed article was selected from the user terminal 120 (S202); and further includes the steps of: sending, by the assisting server 100, a purchase cost of the selected article to the user terminal 120 (S203); and receiving, by the assisting server 100, a notice to purchase the selected article from the user terminal 120 (S204).

In recent years, the spread of the Internet, and further the spread of smartphones have progressed rapidly, so that various information can be obtained borderless across national borders. There are various websites from which information can be obtained and access from abroad to a website that provides EC (EC site) is also on the rise. Depending on an EC site, even if the EC site does not support foreign languages, there are examples where a certain percentage of access is flowing from abroad.
However, even if accessed from abroad, in the case of EC sites, unlike websites aiming to transmit information, it is impossible to achieve its purpose unless settlement and delivery are completed, which is an obstacle to globalization. Delivery abroad, in particular, has various problems.

Assistance method for assisting in provision of EC abroad, and program or assistance server for assistance method


A spinning machine and method of operation include a plurality of adjacently arranged workstations, each workstation having one of a spinning device or a suction nozzle to which a process vacuum is applied during spinning operation. A vacuum duct extends along the workstations for supplying the spinning devices or the suction nozzles with the process vacuum. A maintenance unit is displaceable along the workstations, the maintenance unit including a pneumatic working element and a vacuum line to supply the pneumatic working element with vacuum. A closeable connection opening is at each of the spinning devices or the suction nozzles, the connection opening connected to the process vacuum. The maintenance unit includes a suction head that is advanceable toward the connection opening and is connected to the vacuum line.

Open-end spinning machines comprising displaceable maintenance units are known from the prior art. The maintenance units generally comprise multiple working elements, which can carry out various maintenance tasks at the individual spinning stations, such as a package change, rotor cleaning, piecing after a thread break or after a package change, and the like. The maintenance units and/or their working elements must therefore be supplied with electrical energy, with vacuum, and/or with compressed air depending on the design of their working elements. Various systems for supplying the working elements of the maintenance units with vacuum have become known.
From DE 102 05 786 A1 it is known, for example, to arrange a vacuum source for the maintenance unit in the form of a vacuum pump directly on the displaceable maintenance unit. The vacuum pump has a correspondingly high space requirement and a correspondingly high weight, which must always be carried along with the maintenance unit. If numerous working elements of the maintenance unit must be supplied with vacuum, moreover, the output of such a vacuum pump, which is displaceable with the maintenance unit, may possibly not be sufficient.
Spinning machines have therefore gained acceptance, which, in addition to their regular vacuum system, which provides the process vacuum, comprise a further vacuum system, which supplies vacuum to the maintenance unit. Such a spinning machine is shown in DE 10 2004 038 697 A1. The spinning machine comprises a first ventilator for this purpose, which applies vacuum to a first vacuum duct, via which the workstations of the spinning machine are supplied with process vacuum. A second vacuum duct extends above the spinning machine, which is acted upon by a second ventilator, via which the maintenance unit is supplied with vacuum. The vacuum supply of the machine is therefore complex.
Spinning machines are being manufactured to an increasing extent, however, which comprise so-called autonomous workstations, which can carry out the necessary maintenance actions predominantly automatically with the aid of working elements arranged at the spinning stations. A displaceable maintenance unit is still necessary for the package change, however. DE 101 39 078 A1 proposes, with respect to such a machine, to dispense with a vacuum supply for the maintenance unit. In this case, the maintenance unit merely provides an auxiliary thread for piecing. The further tasks are carried out by workstation-specific working elements. There are still cases, however, in which maintenance actions must be carried out by a displaceable maintenance unit.
The problem addressed by the present invention is therefore that of ensuring the vacuum supply of the maintenance unit in an easy way.

Spinning machine comprising a plurality of adjacently arranged workstations and a displaceable maintenance unit with a pneumatic working element and method for supplying the pneumatic working element with vacuum


A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.

1. Field of the Invention
The present invention pertains to methods and apparatuses for growing single-crystals of silicon by the Czochralski technique, and in particular, to improvements to effectively prevent oxidation induced stacking fault (OSF) formation.
2. Prior Art
High temperature heat treatments in the semiconductor device process sometimes generate OSF in CZ (Czochralski) silicon wafers. OSF in the electronically active layer near the surface could induce device failures by causing current leakage and result in a shortened lifetime of carrier.
The supersaturated oxygen in the single-crystals has hitherto been considered to be responsible for OSF formation. More specifically, when CZ single-crystals are subjected to high temperature heat treatments, oxygen atoms produce miniscule SiO.sub.2 precipitates. As the oxygen precipitate enlarges, it produces interstitial silicon which has been supposed to induce a secondary defect such as OSF.
The inventors have previously proposed a method of growing silicon single-crystals which can prevent the formation of the oxygen precipitates, as disclosed in Japanese Patent Application A-Publication No. 61-201692. The method comprises the steps of providing a temperature control device at a prescribed range of the silicon single-crystal during pulling, and holding the entire single-crystal at a temperature range of between 1,100.degree. and 900.degree. C. for a period of at least three hours, and its object has been to prevent the formation of oxygen precipitates, thereby reducing OSF formation during high temperature heat treatments in the semiconductor device process.
However, after a further investigation, the inventors have found that the above-mentioned method definitely prevents the formation of the oxygen precipitates, but causes an increase in the OSF densities after high temperature treatments.

Method and apparatus for growing silicon crystals


Methods and systems are provided for assessing a vehicle transmission having a resolver. A memory is configured to store preliminary data pertaining to an error of the resolver. A processor is coupled to the memory, and is configured to determine a harmonic characteristic of the preliminary data, and to assess the vehicle transmission using the harmonic characteristic.

Many vehicle transmissions use resolvers to measure a position and speed of a rotor of an electric motor within the transmission. For example, a resolver may be utilized to measure the position and speed of the transmission rotor during operation of the vehicle. However, the resolver may exhibit errors, such as a direct current error (which is also referred to in the field as an offset error) and/or an alternating current error (which is also referred to in the field as a wobble error).
Accordingly, it is desirable to provide methods and systems to assess a vehicle transmission using resolver error data, for example during manufacture of the transmission. Furthermore, other desirable features and characteristics of the present invention will be apparent from the subsequent detailed description and the appended claims, taken in conjunction with the accompanying drawings and the foregoing technical field and background.

Methods and systems for assessing vehicle transmissions


Devices providing ultrasonic clamped cutting using asymmetrical motion include a housing and ultrasonic waveguide. A longitudinal axis extends through the center of mass of the ultrasonic waveguide. An actuating assembly provides opposable movement of a clamp arm with respect to the cutting blade, the movement defining a vertical plane having a vertical axis orthogonal to both the longitudinal axis and a horizontal axis. An end-effector coupled to the ultrasonic waveguide includes a cutting blade that cuts using ultrasonic motion. The blade's center of mass may be offset from the longitudinal axis, providing motion of the blade in both the longitudinal and vertical axes concurrently. Excursion of the cutting blade in the direction of the horizontal axis that may be limited to less than 92%, and in the direction of the vertical axis of more than 8%, of an excursion of the cutting blade in the direction of the longitudinal axis.

(a) Field of the Invention
The present invention relates, in general, to ultrasonic devices and, more particularly, to methods and devices that provide ultrasonic clamped cutting using asymmetrical motion.
(b) Description of the Prior Art
The fields of ultrasonics and stress wave propagation encompass applications ranging from non-destructive testing in materials science, to beer packaging in high-volume manufacturing. Diagnostic ultrasound uses low-intensity energy in the 0.1-to-20-MHz region to determine pathological conditions or states by imaging. Therapeutic ultrasound produces a desired bio-effect, and can be divided further into two regimes, one in the region of 20 kHz to 200 kHz, sometimes called low-frequency ultrasound, and the other in the region from 0.2 to 10 MHz, where the wavelengths are relatively small, so focused ultrasound can be used for therapy. At high intensities of energy, this application is referred to as HIFU for High Intensity Focused Ultrasound.
Examples of therapeutic ultrasound applications include HIFU for tumor ablation and lithotripsy, phacoemulsification, thrombolysis, liposuction, neural surgery and the use of ultrasonic scalpels for cutting and coagulation. In low-frequency ultrasound, direct contact of an ultrasonically active end-effector or surgical instrument delivers ultrasonic energy to tissue, creating bio-effects. Specifically, the instrument produces heat to coagulate and cut tissue, and cavitation to help dissect tissue planes. Other bio-effects include: ablation, accelerated bone healing and increased skin permeability for transdermal drug delivery.
Ultrasonic medical devices are used for the safe and effective treatment of many medical conditions. Ultrasonic surgical instruments are advantageous because they may be used to cut and/or coagulate organic tissue using energy, in the form of mechanical vibrations, transmitted to a surgical end-effector at ultrasonic frequencies. Ultrasonic vibrations, when transmitted to organic tissue at suitable energy levels and using a suitable end-effector, may be used to cut, dissect, or cauterize tissue.
Ultrasonic vibration is induced in the surgical end-effector by, for example, electrically exciting a transducer which may be constructed of one or more piezoelectric or magnetostrictive elements in the instrument hand piece. Vibrations generated by the transducer section are transmitted to the surgical end-effector via an ultrasonic waveguide extending from the transducer section to the surgical end-effector. The waveguide/end-effector combinations are typically designed to resonate at the same frequency as the transducer. Therefore, when an end-effector is attached to a transducer the overall system frequency is still the same frequency as the transducer itself.
At the tip of the end-effector, ultrasonic energy is delivered to tissue to produce several effects. Effects include the basic gross conversion of mechanical energy to both frictional heat at the blade-tissue interface, and bulk heating due to viscoelastic losses within the tissue. In addition, there may be the ultrasonically induced mechanical mechanisms of cavitation, microstreaming, jet formation, and other mechanisms.
Ultrasonic surgical instruments utilizing solid core technology are particularly advantageous because of the amount of ultrasonic energy that may be transmitted from the ultrasonic transducer through a solid waveguide to the active portion of the end-effector, typically designated as a blade. Such instruments are particularly suited for use in minimally invasive procedures, such as endoscopic or laparoscopic procedures, wherein the end-effector is passed through a trocar to reach the surgical site.
Solid core ultrasonic surgical instruments may be divided into two types, single element end-effector devices and multiple-element end-effector. Single element end-effector devices include instruments such as scalpels, and ball coagulators, see, for example, U.S. Pat. No. 5,263,957. While such instruments as disclosed in U.S. Pat. No. 5,263,957 have been found eminently satisfactory, there are limitations with respect to their use, as well as the use of other ultrasonic surgical instruments. For example, single-element end-effector instruments have limited ability to apply blade-to-tissue pressure when the tissue is soft and loosely supported. Substantial pressure is necessary to effectively couple ultrasonic energy to the tissue. This inability to grasp the tissue results in a further inability to fully coapt tissue surfaces while applying ultrasonic energy, leading to less-than-desired hemostasis and tissue joining.
A multiple element end-effector including a clamp mechanism in an ultrasonic surgical device has been described in U.S. Pat. Nos. 3,636,943 and 3,862,630 to Balamuth. Generally, however, the Balamuth device, as disclosed in those patents, may not coagulate and cut sufficiently fast, and may lack versatility in that it cannot be used to cut/coagulate without the clamp because access to the blade is blocked by the clamp.
Multiple element end-effectors include those illustrated in devices such as ultrasonic shears, for example, those disclosed in U.S. Pat. Nos. 5,322,055 and 5,893,835 provide an improved ultrasonic surgical instrument for cutting/coagulating tissue, particularly loose and unsupported tissue. The ultrasonic blade in a multiple-element end-effector is employed in conjunction with a clamp for applying a compressive or biasing force to the tissue. Clamping the tissue against the blade provides faster and better controlled coagulation and cutting of the tissue.
Although ultrasonic shears such as, those disclosed in U.S. Pat. Nos. 5,322,055 and 5,893,835 have been found satisfactory, there may be limitations with respect to their use. For example, the devices disclosed in U.S. Pat. Nos. 5,322,055 and 5,893,835 operate primarily in a longitudinal mode of vibration. End-effectors of devices that operate in primarily longitudinal mode exhibit a sinusoidally diminishing effectiveness proximally from the distal end of the end-effector. As the longitudinal excursion diminishes, the effectiveness of the end-effector diminishes. This currently limits the effective length of ultrasonic devices to a fraction of their wavelength, usually substantially less that ¼ wavelength, to stay away from the node at ¼ wavelength.

Ultrasonic shear with asymmetrical motion


A wind power plant construction includes a turbine with at least two blades, a shaft, and blade angle control apparatus. According to the wind power plant construction shown, supports are rigidly connected to the shaft substantially radially thereto, and are coordinated with the blades. At the extreme ends of the supports are flapping pivots, to which the blades are attached. The blade extends from the flapping pivot towards the shaft; that portion of the blade doing so constitutes an arm to which a control means is connected. The blade is weighted so that the centroid line and axis of rotation of the blade lie closer to the leading edge of the blade than does the buoyancy center.

The present invention concerns a wind power plant construction.
In existing wind power plants the blades of the turbines are fixed comparatively firmly to the shaft so that the turbine can withstand the torques and other stresses even from powerful gusts of wind. This means that adjustment of the turbine blades is made afterwards, that is after the effect of wind on the turbine has been observed, or no blade adjustment whatsoever is undertaken and the turbine is instead controlled with brakes. Such structural designs involve heavy and expensive blade structures, with the consequence that the supporting and bearing arrangements are also required to possess very high durability.
The object of the invention is elimination of the drawbacks mentioned. The specific object of the invention is to provide a wind power plant construction which automatically and continously adjusts the blades in accordance with wind strength and load variations so that the powerful, varying stress-imposing forces caused e.g. by gusts are attenuated before being transmitted to the structures. It is likewise an object of the invention to provide a turbine design which is light and favourable in manufacturing cost, enabling a wind power plant to be constructed which has a good energy production/price ratio.


A graphical shader and a method of distributing graphical data to shader pipelines in a graphical shader are disclosed. In accordance with the method, a shader pipeline input delay is set. Further, a group of the graphical data is distributed to a shader pipeline of the graphical shader to be processed. The method includes waiting for the shader pipeline input delay to elapse. After the shader pipeline input delay has elapsed, another group of the graphical data is distributed to another shader pipeline of the graphical shader to be processed. In another embodiment, a graphical shader includes a plurality of shader pipelines for processing graphical data. Further, the graphical shader includes a shader distributor for distributing a group of the graphical data to one of the shader pipelines and for distributing another group of the graphical data to another one of the shader pipelines after a shader pipeline input delay has elapsed.

1. Field of the Invention
Embodiments of the present invention generally relate to graphics processing. More particularly, embodiments of the present invention relate to improving graphical shader by using delay.
2. Related Art
A graphics processing unit (GPU) is a semiconductor device that specializes in rapidly processing graphical data compared to a typical central processing unit (CPU). The GPU is also utilized for general purpose processing tasks typically performed by the CPU. Within the GPU, there is a graphical shader that performs numerous operations on graphical data to obtain desired optical features and that interfaces with a texture unit. The texture unit further modifies the graphical data to have desired texture and optical features. In some implementations, the texture unit is implemented as part of the graphical shader. Generally, the fabricated GPU utilizes most of the semiconductor area available on the semiconductor chip die. In particular, the graphical shader uses a significant portion of the semiconductor area. Moreover, the processing speed of the GPU is measured by the amount of graphical data that is processed in any time period. Further, the amount of graphical data that can be processed by the graphical shader substantially affects the processing speed of the GPU. Hence, improvements in processing by the graphical shader lead to performance enhancements for the GPU.
Typically, the graphical shader processes or operates on groups of graphical data. The size of these groups depends on various factors. For example, the group may be a pixel quad (or quad), which is a 2×2 pixel block. However, the group may have other number of pixels. In general, the group may have from 1 to M pixels, where M is an integer.
Recently, improvements in graphical processing by the graphical shader have been achieved through the use of a graphical shader architecture that provides for multiple shader pipelines, enabling parallel processing of the graphical data. Each shader pipeline is programmable to perform graphical processing operations on graphical data. For example, multiple quads are distributed to a shader pipeline for processing. The number of quads distributed to the shader pipeline is called a "segment". The segment may loop through the shader pipeline several times before the shader pipeline completes processing the segment. Each loop through the shader pipeline is called a "shader pass" and executes one or more instructions of a shader program. Further, the shader pipelines have access to texture and/or memory data which are often cached for improved performance.
Conventionally, a segment is distributed to one of the shader pipelines after the segment is available. If the graphical shader has four operable shader pipelines and four segments are available, each segment will be distributed to a respective shader pipeline, usually but not restricted to a sequential distribution manner. That is, the four shader pipelines operate concurrently and may require concurrent use of the graphical shader's and GPU's resources. This causes several problems. Some of these problems are shown in FIG. 1.
FIG. 1 illustrates a timing scheme 100 for a conventional graphical shader having multiple shader pipelines. As shown in FIG. 1, four shader pipelines (e.g., SP1, SP2, SP3, and SP4) have received a respective segment sequentially. Each shader pipeline performs a first shader pass (Pass 1) and a second shader pass (Pass 2). During the first shader pass (Pass 1), each shader pipeline (e.g., SP1, SP2, SP3, and SP4) typically accesses the cache of the graphical shader. For example, the cache access may be needed to obtain a particular texture for the respective segment being processed.
Between time T=Ta and T=Tb, the four shader pipelines (e.g., SP1, SP2, SP3, and SP4) are performing the first shader pass (Pass 1) on their respective segment. That is, up to four shader pipelines (e.g., SP1, SP2, SP3, and SP4) may simultaneously request access to the cache of the graphical shader. This situation creates bursts in cache accesses that overwhelm the cache bandwidth. Moreover, this situation creates cache memory coherency problems because, at the same time, data requests from different shader pipelines often have poor correlation because their graphical pixels are often temporally and spatially disjoint from each other. As described above, the graphical shader uses a significant portion of the semiconductor area. An increase in the size or number of caches may be expensive and impractical. Cache memory coherency problems arise when cache lines are overwritten by one shader pipeline due to the finite number of cache lines in the cache while the cache lines are still in use by another shader pipeline. The net effect of these problems is degradation in graphical processing performance. These problems are amplified as the number of shader pipelines is increased.


Apparatus, systems and methods are provided for simulating a material. In particular, the disclosed apparatus, systems and methods involve modeling deformation characteristics of a material and generating a virtual representation of a physical interaction with the material based on the modeled deformation characteristics of the material and data representative of the physical interaction.

1. Technical Field
The present disclosure relates to apparatus, systems and methods for modeling deformation characteristics of a material. Moreover, the present disclosure relates to apparatus, systems and methods for generating a virtual representation of a physical interaction with the material. One potential application for the disclosed apparatus, systems and methods is in the field of mobile computing.
2. Background Art
Modeling characteristics of a material advantageously allows a user to analyze, e.g., visualize, a material, under a simulated set of conditions. The applications for such virtual material analysis are nearly endless, e.g., from facilitating selection of an appropriate material, to helping refine the aesthetics of a finished product. In modeling characteristics of a material, one goal is to minimize the disparity between a user interacting with a virtual material and a user interacting with a physical material. One of the greatest areas of disparity is the inability of a user to physically touch or manipulate a virtual material. Thus, improved apparatus, systems and methods are needed to simulate a physical interaction with a virtual material, e.g., to enable a user to analyze deformation characteristics such as tensile strength and elasticity.
There has in recent years been an explosion of mobile computing devices, such as tablets, laptops, smartphones, personal digital assistants, etc. Mobile computing devices are attractive to users, e.g., due to their portability and accessibility. Moreover, mobile computing devices have been at the forefront of pushing the limits of environmental/human interaction. For example, a typical mobile computing device may include a wide array of detectors/sensors for interacting with a user and/or the environment, including but not limited to detectors/sensors for imaging (e.g., a camera), ambient light, orientation/motion (e.g., a gyroscope), tactile interaction (e.g., a touchscreen), temperature-based functionality, location-based functionality (e.g., GPS), radio frequency communications, etc. Moreover, a typical mobile computing device may include or interface with a wide array of mechanisms for providing feedback, including but not limited to visual (e.g., a display), auditory (e.g., a speaker), and/or tactile (e.g., a haptic interface) interfaces.
Given the plethora of abilities and functionalities, mobile computing devices advantageously provide a platform ripe with opportunity for improving upon conventional material simulation. In particular, since most mobile computing devices support tactile interaction (e.g., via multi-touch touchscreen interfaces), there is a need and/or opportunity for improved material simulation which utilizes, at least in part, such tactile interaction functionality.
The foregoing needs/opportunities and other needs/opportunities are addressed by the apparatus, systems and methods of the present disclosure.

Apparatus, systems and methods for simulating a material


A compound capable of shortening the response time of liquid crystal display elements and a composition containing the same are provided, which compound is expressed by the formula ##STR1## wherein R.sup.1 represents a linear or branched chain alkyl group or alkoxy group, each of 1C-18C; Ar represents ##STR2## wherein X represents H, halogen atom, cyano group or methyl; A represents --COO-- or --CH.sub.2 O--; R.sup.2 represents a C.sub.1 -C.sub.18 alkyl, A C.sub.2 -C.sub.18 alkanoyl, a C.sub.3 -C.sub.18 alkoxycarbonyl or a C.sub.4 -C.sub.18 2-alkoxypropanoyl; C having a symbol * attached thereonto represents asymmetric carbon atom; and when R.sup.2 represents a linear chain alkyl and A represents --COO--, Ar is not ##STR3##

1. Field of the Invention
This invention relates to a novel optically active liquid crystal substance and a liquid crystal composition containing the same, and more particularly it relates to a chiral liquid crystal substance having an optically active group and a ferroelectric liquid crystal composition containing the same.
2. Description of the Related Art
At present, ferroelectric liquid crystals have been noted as a display element material. This display mode utilizes phases of chiral smectic C, F, G, H, I, etc. Materials suitable to this display mode have been reported by various publications, but materials shortening the response time of the element have not yet been found.

Optically active 2-substituted-propyl ether and a liquid crystal composition


A method for positioning electronic devices into compartments of an input medium is disclosed. At least one electronic device is packable in a single compartment of the input medium. Known positions on an upper side of the input medium are imaged by an inspection device. Actual position data of the compartments of the input medium are calculated on the basis of images of the known positions, given target position data of the known positions, and given target position data of the compartments of the input medium. A pick and place device for the electronic devices is controlled on the basis of the calculated actual position data of the compartments of the input medium. A method for determining the actual positions of compartments of an output medium is disclosed with analogous steps, whereby the electronic devices are picked-up from compartments of the input medium, transferred to compartments of the output medium, and placed into the compartments of the output medium. Arrangements for positioning a plurality of electronic devices into compartments of an input medium and compartments of an output medium are also disclosed.

Electronic devices, for example electronic components or integrated circuits (ICs), are often transported in trays during production, whereby a single electronic device is packable in a single compartment (pocket) of the tray. Once the electronic devices are picked-up from the tray they are placed and packaged in compartments (pockets) of a tape. In particular, at least one electronic device is picked-up from a respective at least one compartment of the tray, transferred to a respective at least one compartment of a tape, and then placed into the respective at least one compartment of the tape. The steps of picking-up, transferring and placing are carried out by a pick and place device, whereby a single electronic device is packable in a single compartment of the tray or tape respectively. This process of transferring electronic devices from a tray to a tape is referred to as "taping a tray". More generally, electronic devices are transferred from an input medium to an output medium. Hereby, "taping a tray" is only one possible type of transfer, the tray being the input medium and the tape being the output medium. In general, the input medium can be a tray or a tape, and the output medium can also be a tray or a tape. Even more generally, the input and output medium can be any kind of media or arrangement of compartments or pockets suitable for receiving, storing and containing electronic devices. In the following, the terms "compartment" and "pocket" are used in the same context, meaning any recess or opening in an upper side of the medium, the recess or opening being suitable for receiving, storing and containing an electronic device.
For example, the input medium and/or the output medium can be a JEDEC/EIAJ tray, i. e., built according to JEDEC (Joint Electron Devices Engineering Council) standard. In addition, the input medium and/or the output medium can be a molded matrix carrier for said electronic devices. A matrix with a plurality of compartments is formed in an upper side of the medium, so that a single compartment of the medium can receive and store at least a single electronic device. An X-Y coordinate system is assigned to the medium. A medium is defined by a theoretical model like a CAD (Computer Aided Design) data model which comprise target (theoretical) dimensions with tolerances: number of rows of compartments in the matrix, number of columns of compartments in the matrix, X- and Y-offset of the first compartment of the medium with respect to the edge of the medium, and pitch (dX, dY) between the compartments. However, the real dimensions of such a medium can vary over time, influenced by handling, temperature, batch or even supplier, etc.
For example, the input medium and/or the output medium can be a tape which is a flexible carrier with a linear array or a matrix of a plurality compartments for said electronic devices. Analogously to the tray; the same or another X-Y coordinate system is assigned to the tape, and the tape is defined by its CAD data which comprise target dimensions with tolerances: width, length, height, pitch, and F-value according to EIAJ (Electronic Industries Association of Japan) specification.
In order to place an electronic device correctly and well-aligned in a compartment of an output medium, the pick and place device has to                1) pick-up the electronic device from a defined known position on the electronic device, for example on the center of the electronic device, and        2) transfer and place the electronic device in a compartment of the output medium where the position of the compartment in the output medium and the dimensions of the electronic device have to be known.
Ideally these positions can be taught once for all media of the same kind. In practice, however, there are several tolerances that require re-calibration. The two main tolerances are due to variations in handling and variations between media. By design, the latter tolerance is the more important one: media like trays can have variations of up to 1 mm. One of the reasons for these variations are that media are exposed to large temperature variations. They are heated up and cooled down while clamped on a holding device or stage.
Therefore, the general purpose is to re-calibrate the pick-up positions of a pick and place device for each new input medium such that the pick and place device can pick-up electronic devices from a defined known position on the electronic device placed in compartments of the respective input medium and then transfer the electronic devices to compartments in an output medium.
Depending on the required precision, two known different methods are used for solving above problem.
As to the first known method, in case the size of the compartment tolerance of the output medium (e. g., tape) is sufficiently larger than the compartment tolerance of the input medium (e. g., tray), only the fixed CAD data defined in the handler model is used. In this case, misalignment due to variations from one input medium to another is not an issue, because said sufficiently larger compartments of the output medium offer sufficient space for receiving and storing said relatively small electronic devices.
As to the second known method in the other case, if the difference between the size of the compartment and the size of the electronic device is small, precise alignment is required. This is done by visional alignment (VA) on electronic devices, i. e. mechanical alignment by using vision methodology on electronic devices. Here, the electronic device is picked-up from a compartment of the input medium and then transferred to a machine vision based inspection device in order to determine the position, or position data respectively, of the electronic device with respect to the pick and place device. This information is then used to align the electronic device correctly to a compartment of an output medium and drop or place the electronic device into said compartment of the output medium.
Often not only one but several electronic devices are simultaneously picked-up in parallel from parallel compartments of an input medium and simultaneously placed in parallel into parallel compartments of an output medium. Also here, VA is used to calculate an optimal correction such that no misplacement occurs.
While the VA approach is precise and reliable its disadvantage is that it is rather slow. Each electronic device needs to be transferred to an inspection device, or the inspection device needs to be transferred to the electronic device. Then the respective electronic device is measured there. Often not only one but several electronic devices are simultaneously transferred to an inspection device with a corresponding number of cameras (or to a corresponding number of inspection devices with a single camera respectively) and simultaneously inspected.
By VA inspecting the respective electronic devices of the respective medium in respective image fields of view of respective inspection device(s), actual, i. e., corrected, position data of the respective compartments of the input medium are determined before the respective electronic devices are placed in respective compartments of an output medium. However, inspecting each electronic device of the input medium extremely lengthens the process of transferring the electronic devices from the input medium to the output medium, particularly, if the throughout requirements of units (electronic devices) per hour are high, for example for throughout requirements of more than 20 000 units per hour.
In addition, VA disadvantageously does not guarantee a centered pick-up of the electronic device from the respective compartment of an input medium, whereby the term "centered pick-up" refers to the center of the respective compartment of the input medium.
Other effects, like when electronic devices are blown-off the center of the compartment of the input medium, have impact on the drop or placement behavior of electronic devices and may result in an inferior drop or placement in respective compartments of an output medium, i. e., in a higher possibility for misplacement of the electronic devices in the respective compartments of the output medium, even if an VA inspection has been carried out before.
With VA inspection the speed penalty becomes too large, even if the at least one inspection device is located near the input medium. However, without VA it is often hardly possible to use different input media without manually adjusting the CAD data of the input medium in the handler model (third method). The latter method has an even larger speed penalty.
For the moment there are two different techniques for the transfer of electronic devices from an input medium to an output medium:                1) blind transfers using only the CAD data of the input medium: This advantageously results in a basic flow of transfers and no speed penalty; however, blind transfers disadvantageously result in low precision and/or low complexity; and        2) VA: two-dimensional (2D) corrections and rotation correction for each electronic device separately, if necessary: This disadvantageously results in a slow or interrupted flow of transfers and high speed penalty; however, VA advantageously results in high complexity.
Above term "complexity" refers to the density of packaged electronic devices, the smallness of compartments or electronic devices, respectively, and the number of compartments or electronic devices, respectively, in a medium. The smaller the electronic devices are and the denser the electronic devices are packed in correspondingly small and dense compartments of the medium, the higher is the number of electronic devices packable in the medium and the more complex are the medium dimensions and the requirements for a safe and precise pick-up, transfer and placement of the electronic devices.
In summary, advantages of the VA approach correspond with disadvantages of the blind transfer and adjusting-CAD-data approaches, whereas disadvantages of the VA approach correspond with advantages of the other said two approaches. Hence, there is a long-felt need to overcome, or at least reduce, the disadvantages of said three approaches.
U.S. Pat. No. 6,449,531 B1 discloses a method and an apparatus for transferring packaged integrated circuits from one JEDEC standard tray to another without manual handling of the ICs. Embodiments include a pick and place system for transferring ICs from a first tray to a second tray, motor drivers and a head for picking-up and placing the ICs by vacuum. The pick and place system is controlled by a processor that receives instructions from an input device. A first tray of ICs to be batched and a second tray to which the ICs are to be transferred are brought to the system. The operator enters data relating to the package to be transferred, the quantity of devices to be transferred, and the positions of the devices in the trays. The processor then controls the pick and place system to transfer the inputted quantity of devices from the first to the second tray based on the device positional information entered by the operator. Since there is no manual handling of the ICs, damage to the devices, such as bent leads, is eliminated, as is misorientation and miscounting of devices. Said method and said apparatus do not use VA and inspection devices.
U.S. patent application U.S. 2009/035119 A1 discloses a handling mechanism of trays with which electronic parts are fed and inspection device of the electronic parts using the mechanism. Through the provision of a tray placing rack for storing trays in multi steps, the trays accommodating electronic parts after inspection are received in the racks and through the provision of a tray stacking rack above the tray placing rack, an empty tray emptied by having been inspected of the electronic parts before inspection at an inspection stage is stacked on the tray stacking rack. When a certain tray is filled with electronic parts after inspection and is discharged, an empty tray is taken out from the tray stacking rack and the empty tray is fed to the rack position of the discharged tray to permit re-use of empty trays. Said method and said apparatus also do not use VA and inspection devices.

Method and arrangement for positioning electronic devices into compartments of an input medium and output medium


A resist film is applied to an entire surface and subjected to patterning substantially in the same form as an opening to bury the resist film inside the opening. When a positive resist is used, a photomask having a light-shielding portion with an area smaller than the opening is used in patterning. When a negative resist is used, a photomask having a light transmitting portion with an area smaller than the opening is used.

1. Field of the Invention
The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for protecting the bottom of an opening against processing in a subsequent step in the formation of a capacitor or in a dual Damascene process.
2. Background Art
For protecting the bottom of an opening, a method has been conventionally adopted wherein where a cylindrical capacitor of a semiconductor is, for example, formed, an opening is formed in an oxide film, after which a film, such as polysilicon, is formed over the whole surface and an organic film, such as a resist, is formed by a coating method and exposure is effected so that the resist film is left as an etching mask only at the bottom of the opening, thereby protecting the polysilicon film, followed by etching back to remove the region other than the polysilicon inside the opening (e.g., see Japanese Patent Laid-open No. Hei 8-204150 (page 4, FIG. 1)).
In the conventional method of protecting the bottom of an opening of a semiconductor device, a positive photoresist is used for an organic film employed as a protecting material and is subjected to whole surface exposure to completely remove the resist from the upper portion of the opening through exposure and development. Because exposure light does not arrive at the bottom of the opening, the resist is left thereat, which is used to realize the protection of the polysilicon film at the bottom of the opening. Similar effects are obtained using, for another method, a method wherein an organic film, such as a resist, is applied and subsequently etched back.
However, these methods have the problems that if the resist at the bottom of the opening is left where aspect ratio of the opening is small, i.e., where the depth of the opening is small, or area of the opening is large, the resist on the upper portion of an insulating film around the opening may also be left, or the resist at the bottom of the opening may be undesirably removed if the resist on the upper portion of the insulating film is removed.

Method for burying resist and method for manufacturing semiconductor device


A tire for a vehicle wheel includes a carcass structure, a belt structure associated coaxially with the carcass structure, and a tread band extending coaxially around the belt structure. The tread band includes a relief pattern including at least one row of blocks separated by transverse grooves intersecting two circumferential grooves. Each block of the at least one row is essentially delimited by two longitudinal sides in a circumferential direction of the tire and two transverse sides with respect to a predetermined rolling direction of the tire. Each block of the at least one row is formed by two axially-adjacent block portions. The transverse sides of each block portion include at least two successive curvilinear portions shaped differently from each other. The transverse grooves include two branches, each branch including a widened cross-section of substantially-curvilinear shape disposed in an area substantially equidistant from ends of a respective branch.

1. Field of the Invention
The present invention relates to tyres for motor vehicles, particularly directional tyres for use on snow-covered ground.
2. Description of the Related Art
A tyre, in its most general form, comprises: a carcass structure including a central crown portion and two axially opposing sidewalls terminating in a pair of beads for securing the tyre to a wheel rim, a belt structure associated coaxially with the carcass structure and a tread band extending coaxially around the belt structure.
The tread band is generally moulded with a relief pattern formed by a plurality of longitudinal and transverse grooves which, in combination, give rise to a plurality of blocks distributed according to different types of configurations, for example along a central area extending across the equatorial plane and in at least two shoulder areas extending in axially opposed positions on either side of said central area.
Of particular importance for the purposes of travel on a snow-covered surface is the presence, in the blocks, of suitable sipes, in other words of a closely spaced set of incisions or small grooves which are circumferentially distributed and orientated essentially transversely with respect to the rolling direction. The function of said sipes is essentially to collect and retain the snow in an efficient way, since it has been shown to be generally convenient to exploit the friction of snow on snow to ensure a good grip of a tyre on snow-covered ground.
One type of winter tyre marketed by the Applicant has, in the tread band, a pair of rectilinear circumferential grooves, arranged symmetrically with respect to the equatorial plane of the tyre and spaced apart from each other by a distance essentially equal to half of the total width of the tread band.
Said circumferential grooves are combined with two sets of transverse grooves, each of which extends with a progressively increasing inclination from the outer edge of the tread band to a point on the equatorial plane.
The transverse grooves of said two sets converge symmetrically on the equatorial plane of the tyre in a predetermined preferred rolling direction, and have their vertices interleaved with each other alternately along the perimetric extension of the tread band in correspondence of the equatorial plane.
In said tread band, the configuration of the transverse grooves is such as to promote good characteristics of traction because of the mutual convergence of the grooves in the rolling direction.
Moreover, the circumferential rectilinear grooves enable water to be removed efficiently from the footprint while the tyre is running on a wet surface, thus preventing the onset of the well-known and dangerous phenomenon of aquaplaning.
The traction and the overall behavior in travel on a snow-covered surface are improved by the provision of closely spaced sipes in the blocks obtained by the intersection of the longitudinal grooves with the transverse ones, and by suitable rectilinear grooves, associated with the transverse grooves, in the space delimited by the two circumferential grooves, each of said rectilinear grooves extending in the circumferential direction for a short distance from the corresponding transverse groove.
Patent EP-773,116, in the name of the same Applicant, discloses a tyre for snow-covered surfaces, provided with a tread band in which the circumferential grooves are formed by a sequence of portions orientated obliquely with respect to the circumferential direction of the tyre. Said oblique portions converge symmetrically towards the equatorial plane according to a direction opposite to the direction of convergence of the transverse grooves.
Each of the oblique portions of the circumferential grooves extends between two consecutive transverse grooves and delimits respectively the opposing circumferential edges of a centre block and of a shoulder block.
In this solution, each of the centre and shoulder blocks has a corner projecting into the inside of the corresponding circumferential groove with respect to the opposite corner of the block immediately following it.
In this situation, the projecting corners of the centre blocks act as teeth which provide the grip on snow in traction, while the projecting corners of the shoulder blocks produce this effect during braking.
In order to increase the grip on snow, said tyre also has a groove of trapezoidal shape extending partially between two adjacent blocks belonging to the same row of centre blocks.
Said groove passes through the transverse groove between the two centre blocks and has an inner circumferential edge and an outer circumferential edge which diverge from each other at angles preferably comprised from 3° to 15°, in the opposite direction to the rolling direction.
However, since the tread pattern for a tyre suitable for running on snow-covered ground has a considerable number of blocks, it inevitably causes a certain degree of noise when running on dry roads because of the successive impacts of the frontal profiles of the blocks on the ground.
U.S. Pat. No. 5,759,313 relates to a pneumatic tyre permitting a vehicle to travel excellently both in the on-road condition and in the off-road condition without changing its tyres. To achieve such an object, the document discloses a tyre, wherein sub-grooves extending at least in the widthwise direction of the tyre are arranged in the circumferential direction thereof at a predetermined pitch in a center portion of a tread surface and in shoulder portions thereof on both sides of the center portion. Both the width and depth of the sub-grooves in both of the shoulder portions are set larger than those of the sub-grooves in the center portion. A ratio of the area of the sub-grooves in both of the shoulder portions to that of the tread surface is set larger than a ratio of the area of the sub-grooves in the center portion to that of the tread surface.
In considering the cited prior art, the Applicant has perceived the necessity of providing a tyre for snow-covered ground which can simultaneously ensure a good grip on said type of ground, a satisfactory noiseness when running on dry roads, and a high wear-resistance of the tread blocks.

Tyre for a vehicle wheel including specific tread patterns


A motion control stage assembly includes a payload assembly and a base assembly joined together with connecting elements. The connecting elements provide degenerate support between the base and the payload such that a desired trajectory of the payload with respect to the base is relatively unconstrained. The connecting element assemblies are substantially planar, and each includes a first connecting element with a first intermediate point, a second connecting element with a second intermediate point, and a secondary connecting element that joins the first and second connecting elements at the first and second intermediate points. The first and the second connecting elements may be formed integrally with each other, of materials including a semiconductor material, a resilient metal or a plastic, and by processes including micromachining, wire-electrical-discharge machining, or injection molding.

1. Field of the Invention
The present invention relates generally to optical devices, and more particularly, to optical element alignment assemblies and methods of making the same.
2. Description of the Related Art
An optical component, such as a mirror, lens or fiber, in an optical instrument or device, such as an optical switch, camera, or projector, should be accurately located/positioned with respect to another optical component in order for the optical instrument or device to function properly. Thus, optical devices may require their components to be placed with exacting tolerances to fulfill design objectives. In some cases, optical devices may require their components to be placed with exacting tolerances along a trajectory, to enable precise motion of the components.
Conventional passive alignment assemblies for MicroElectroMechanical System (MEMS) devices are typically planar in nature and align only local elements, e.g., a fiber and ball lens collimator, in which the two components are disposed within a few millimeters of each other. Alignments over larger distances (e.g., greater than about five millimeters), and three-dimensional optical systems typically use conventionally machined components. Such assemblies often are incapable of aligning optical components with high intrinsic precision.

Motion control stages and methods of making the same


A disconnection apparatus (88) comprises two disconnect members (12,14) which are interfaced to define a continuous channel (28,29) extends therethrough, and two cylindrical cartridges (84,86) slidably disposed in the channel (28,29). The channel (28,29) intersects two flow paths (70,72) formed in the disconnect members (12,14). The cartridges (84,86) are positionable in the channel (28,29) to block both flow paths (70,72) and are operative to re-direct fluid in order to prevent leakage when the members (12,14) are disconnected.

In fluid transfer or containment systems, it is desirable to provide for disconnection with minimal leakage. This is of particular importance when the fluid is a hazardous chemical, or when the fluid system is employed in space where leakage presents the singularly cumbersome task of clean-up in a zero-gravity environment.
An objective of this invention is to provide a substantially leak-free disconnection apparatus.
A further objective of the invention is to provide a disconnection apparatus suitable for use in space or in systems which incorporate hazardous chemicals.
A still further objective of the invention is to provide a disconnection apparatus adapted for substantially leak-free maintenance.
The word "cartridge" as used herein is intended to convey that an item so denominated is easily changed or replaced. However, despite any conventional use to the contrary, the word "cartridge" is not intended herein to express a limitation that the item so denominated is a case or container.

Substantially leak-free disconnection apparatus


The present invention relates to a method for programming or erasing memory cells that include a selection transistor connected to a floating-gate transistor. According to the method, a non-zero compensation voltage is applied to the gate of a transistor not involved in the programming or erasing process so as to increase a breakdown threshold of the transistor, and an inhibition voltage is applied to the gate or to a terminal of at least one floating-gate transistor connected to the transistor having its breakdown threshold increased to inhibit a phenomenon of soft programming or soft erase of the floating-gate transistor.

1. Field of the Invention
The present invention relates to EEPROM memories (electrically erasable and programmable memories) and to an improvement in the breakdown threshold of transistors in the presence of a high programming or erase voltage.
2. Description of the Related Art
FIG. 1A is the wiring diagram of a classic EEPROM memory cell 10. The memory cell comprises a floating-gate transistor FGT and a selection transistor ST. The transistor ST comprises a gate G, a drain D (drain terminal) and a source S (source terminal). The transistor FGT also comprises a control gate CG, a drain D and a source S, and also comprises a floating gate FG. The source S of the selection transistor ST is connected to the drain D of the transistor FGT.
FIG. 1B is a cross-section of an example of an embodiment of the memory cell 10 according to the double polysilicon layer technique, and FIG. 1C shows the memory cell seen from above. Three n+ doped regions 3, 4, 5 are formed in a p-type substrate 1. The region 3 forms the source region of the transistor FGT, the region 4 forms the drain region of the transistor FGT and the source region of the transistor ST, and the region 5 forms the drain region of the transistor ST. The floating gate FG of the transistor FGT is formed by a polysilicon pad POLY1A. The gate G of the transistor ST is formed by the intersection of a line of polysilicon POLY1B with the doped regions 4, 5, the line POLY1B forming a word line WL linking the gates of various other selection transistors (not represented). Similarly, the control gate CG of the transistor FGT is formed by the intersection of a line of polysilicon POLY2 with the doped regions 3, 4, the line POLY2 forming a control gate line CGL linking the control gates of various other transistors FGT (not represented). These various polysilicon parts are insulated from the substrate and insulated from one another by a dielectric 2, generally silicon dioxide. Finally, a source contact SC formed above the region 3 links the source of the transistor FGT to a source line SL (not represented). A drain contact DC formed above the region 5 links the drain of the transistor ST to a bit line BL (not represented).
A datum is saved or erased in the memory cell 10 by injecting electric charges into the floating gate FG of the transistor FGT or by extracting electric charges from the floating gate FG. The injection or extraction of charges changes the threshold voltage of the transistor FGT that is then detected by a sense amplifier, the function of which is to transform the "threshold voltage" information into a binary datum, for example equal to 1 when the threshold voltage is negative and equal to 0 when the threshold voltage is positive.
The two processes of injecting and extracting electric charges are performed by tunnel effect (Fowler-Nordheim effect). For this purpose, the floating gate FG has a region that extends above the drain region 4 and in which the separating layer of dielectric 2 is made thinner to form a tunnel window TW. To program the memory cell (injection of charges), a high programming voltage is applied to the drain region of the transistor FGT, via the transistor ST, while the control gate CG is taken to a zero or negative potential. To erase the memory cell, a high erase voltage is applied to the control gate CG while the source region 3 is taken to a zero or negative potential.
The performances of an EEPROM memory are directly linked to the time of injecting or extracting electric charges into floating gates of the memory cells. An efficient memory must have a programming or erasing time as short as possible. This time depends on three parameters that are involved in the transfer of charges by tunnel effect:
1) the thickness of the dielectric forming the tunnel window TW,
2) the value of the high programming or erase voltage,
3) the floating gate coupling factor, i.e., the ratio between, firstly, the capacitive coupling between the floating gate and the control gate and, secondly, the capacitive coupling between the floating gate, the drain, the source, and the substrate.
The thickness of the tunnel dielectric cannot be reduced below a certain threshold, above which the memory cells would have losses of electric charges ("retention loss") eventually causing a corruption of data (an EEPROM memory being supposed to keep the data saved for several years). It follows that the two main parameters on which the performances of an EEPROM memory rely are the coupling factor and the value of the high programming or erase voltage.
The greater the coupling factor, the faster the programming or erasing process for a determined programming or erase voltage. However, the coupling factor tends to decrease when the size of the memory cells decreases (transistor FGT and ST gate width to length W/L ratio). As the size of transistors is constantly decreasing with the improvement of microelectronic techniques, the paradoxical result is that the new generation memories, having smaller memory cells, need higher programming and erase voltages than the previous generation memories. Thus, the coupling factor represents a major obstacle to the decrease in the size of EEPROM memories without increasing the programming or erasing time.
After all is said and done, the obvious solution to preserve the programming and erasing time of an EEPROM memory the size of the transistors of which must be reduced, is to increase the value of the high programming or erase voltage. However, another technological constraint is also faced, in that MOS transistors have a breakdown threshold which determines the maximum value of the erase or programming voltage that can be applied to interconnected memory cells.
In FIG. 1B, the reference Di designates a breakdown region of a selection transistor ST. This region is a PN substrate-drain junction (and more particularly channel-drain) forming a reverse-biased diode. When the drain region receives a programming voltage while the substrate 1 is linked to the ground (which, in principle, is always the case), the diode Di reaches its breakdown point (threshold voltage of the reverse-biased diode) in the vicinity of a value that is in the order of 12V in the EEPROM memories marketed by the applicant. Thus, the programming voltage cannot be taken above this value.
For a better understanding of the impact of the breakdown phenomenon on the programming and erasing process, FIG. 3 represents an EEPROM memory of the word-erasable type, having memory cells being programmed. It can be seen that the selection transistors ST of vertically aligned memory cells have their respective drains connected to common bit lines BL. For example, selection transistors ST(i,7,k) and ST(i−2,7,k) are connected to a same bit line BL(7,k). Thus, when a high programming voltage Vpp1 is applied to the bit line BL(7,k) to program for example the memory cell comprising the selection transistor ST(i,7,k), this transistor receives a high value gate voltage Vp1 to let the high voltage Vpp1 through while all the other selection transistors connected to this bit line, particularly the transistor ST(i−2,7,k), receive a zero gate voltage and are in the off state. These transistors not involved in the programming process have a lower breakdown threshold than that of the transistor ST(i,7,k) and thus limit the maximum voltage Vpp1 that can be applied to the bit line.
As another example, FIG. 4 represents an EEPROM memory identical to the one in FIG. 3 but having memory cells being erased. The memory comprises control gate transistors, for example transistors CGT(i−2,k) and CGT(i,k), the drains of which are connected to a common control gate line, for example a line CGL(k). When a high erase voltage Vpp1 is applied to the control gate line CGL(k) to erase for example memory cells linked to the transistor CGT(i,k), this transistor receives a high value gate voltage Vp1 to let the high voltage through while all the other transistors linked to this control gate line, particularly the transistor CGT(i−2,k), receive a zero gate voltage and are in the off state. These transistors that are not involved in the erasing process have a breakdown threshold lower than that of the transistor CGT(i,k) and thus limit the maximum voltage Vpp1 that can be applied to the control gate line.

EEPROM memory having an improved resistance to the breakdown of transistors


An improved lateral bipolar junction transistor and a method of forming such a lateral bipolar transistor without added mask in CMOS flow on a p-substrate are disclosed. The CMOS flow includes patterning and n-well implants; pattern and implant pocket implants for core nMOS and MOS; pattern and implants pocket implants I/O nMOS and pMOS; sidewall deposit and etch and then source/drain pattern and implant for nMOS and pMOS. The bipolar transistor is formed by forming emitter and collector contacts by implants used in source/drain regions; forming an emitter by implants done in core pMOS during core pMOS LDD extender; and forming part of an base by pocket implant steps.

Electronic equipment such as telephones, radios, televisions, games and computers comprise largely of semiconductor components. The low standby power demands of CMOS makes it especially suited for many of today's applications. Some of these semiconductor components comprise both low voltage transistors optimized for in chip processing referred to as core devices (core nMOS and core pMOS) and higher voltage devices referred to as I/O devices (I/O nMOS and I/O pMOS) optimized for between chip processing usually located near the periphery of the structure. A CMOS transistor includes source and drain regions formed in the face of the semiconductor layer with a gate insulatively disposed adjacent the face of the semiconductor layer and between the source and drain regions. The channel region between he source and drain is of opposite conductivity type to the source and drain. Pocket implants may also be formed generally self-aligned to the gate and adjacent to the source and/or drain regions. Pocket implants are of dopants that are of the same type as the channel and of opposite type as that in the source/drain. See Chatterjee et al. U.S. Pat. No. 6,287,920 B1 and Nandakumar et al. U.S. Pat. No. 6,228,725 B1 incorporated herein by reference. The high voltage MOS devices have a thicker gate oxide (for gate oxide integrity and time dependent dielectric breakdown (TDDB)) and have longer length and graded LDD (Lightly Doped Drain) implant (for channel hot carrier (CHC) reliability). The lower voltage devices use pocket implants to control the short channel threshold voltage roll off and not typically used in high voltage or I/O devices because of the longer length since control is easier and the threshold voltage will be raised (which produces undesirable CHC). See application Ser. No. 09/589,953 filed Jun. 8, 2000 of Amitava Chatterjee et al. entitled "Method to Partially or Completely suppress Pocket Implant in Selective Circuit Elements With No Additional Mask in a CMOS Flow Where Separate Masking Steps are Used for the Drain Extension Implants for the Low Voltage and High Voltage Transistors." This application is incorporated herein by reference. Also see article of A. Chatterjee et al. in Symposium of VLSI Technology pp. 147-148, in 1999 entitled "Transistor Design Issues in Integrating Analog Functions with High Performance Digital CMOS."
A typical CMOS flow includes the following steps:                1. Shallow Trench Isolation.        2. Pattern and implant p-well implants.        3. Pattern and implant n-well implants.        4. Implant damage anneal.        5. Gate Module for split gate.        6. Drain extension patterns and implants as follows not necessarily in order: pattern and implant drain extensions and pocket for core nMOS; pattern and implant drain extensions and pocket for pMOS; pattern and implant drain extensions and pocket for I/O nMOS; and pattern and implant drain extensions and pocket for I/O pMOS.        7. Sidewall deposit and etch.        8. Source/drain pattern and implant for nMOS.        9. Source/drain pattern and implant for pMOS.        10. Silicide module.        11. Contact module.        12. Dual Damascene Cu metalization module.        13. Protective Overcoat.
Bipolar transistor devices are characterized by higher switching speeds and larger output currents than MOS, but are not formed with the circuit density of MOS circuits and bipolar devices do not give the much lower standby power of MOS circuits. It is desired for many reasons to integrate bipolar and MOS devices. In one preferred application the bipolar transistor is used to build "bandgap reference" circuits. The exponential relationship between current and voltage of the bipolar transistor is utilized to generate a reference voltage. There have been many articles and patents in this area of this technology. See for, example Vittoz, IEEE JSSC June 1983, page 273 and discussion in Holman and Connelly, IEEE JSSC June 1995, p 710. There are also many patents such as U.S. Pat. No. 4,669,177 of D'Arrigo et al. and U.S. Pat. No. 6,075,272 of Prall et al. There is a desire to form bipolar junction transistors in a CMOS flow at no added cost.
There are lateral bipolar junction transistors formed in MOSFET devices with reference to p-substrate and n-well. A parasitic vertical pnp with n-well base pith p+ source/drain emitter, n-well base and p substrate collector has been produced and is illustrated in FIG. 1. The base region below the emitter contact is an n-well region. The base contact is formed by an n-well region and by the implants used in the nMOS source/drain regions. One may choose to include or omit the implants done in the core nMOS during the core nMOS Lightly Doped Drain (LDD) extender implants and pocket implants steps. Likewise one may choose to include or omit the implants used in any other nMOS in the CMOS flow such as the I/O nMOS. The emitter contact is formed by the implants used in the pMOS source/drain regions. One may choose to include or omit the implants done in the core pMOS during the core pMOS LDD extender implants and pocket implant steps. For the pMOS LDD extender implant BF2 (boron and fluorine) may be used and for the pocket phosphorous implant may be used. Likewise one may choose to include or omit the implants used in any other pMOS in the CMOS flow such as the I/O pMOS. The collector region below the base is the p-substrate and the p-well region along with the implants used in the pMOS source/drain regions form the collector contact. The active regions may or may not be silicided or part of the regions may be silicided depending on the options available in the CMOS flow. Note that the pocket implants are always the opposite type as the source/drain; namely, for a pMOS the pocket is donor type while the LDD extender and the source/drain implants are acceptor type.
Another prior art bipolar device is a parasitic lateral pnp formed with p+ source/drain emitter and collector with n-well base as illustrated in FIG. 2. The emitter and collector contacts are formed by the implants used in the pMOS source/drain regions. One may choose to include or omit the implants done in the core pMOS during the core pMOS LDD extender and pocket implant steps. Likewise one may choose to include or omit the implants used in any other pMOS in the CMOS flow such as the I/O pMOS. The vertical pnp as described in FIG. 1 is present here but is considered as a parasitic device. The base region below the emitter and collector contacts is an n-well region. The base region going laterally from the emitter to the collector has the n-well and the pocket implants in the cases where the emitter and collector includes the core pMOS LDD extender and pocket implants (indicated by dashed lines). Note that the pocket implants are always the opposite conductivity type as the source/drain; namely, for a pMOS the pocket is donor type while the LDD extender and source/drain are acceptor type. The base contact is formed by an n-well region and by the implants used in the nMOS source/drain regions. One may choose to include or omit the implants done in the core nMOS during the core nMOS LDD extender and pocket implant steps. Likewise one may choose to include or omit the implants used in any other nMOS in the CMOS flow such as the I/O nMOS. The active regions may or may not be silicided or part of the regions may be silicided depending on the options available in the CMOS flow. The polysilicon may be p-type or n-type depending on the CMOS flow and how the poly is implanted. The purpose of the polysilicon is to block silicide shorting the emitter to base and to collector. In cases where the flow has a silicide block pattern then the silicide block layer such as silicon nitride can be used. The polysilicon gate is typically connected electrically to the emitter.
A third prior art bipolar device is a vertical pnp with compensated well emitter, n-well base and p-substrate collector. The base region below the emitter contact is a "compensated well" region. In a dual well CMOS flow the n-well regions are normally implanted with one set of implants and the p-well region is implanted with a second set of implants. A "compensated well" region means a region where all the implants present normally in the n-well as well as all the implants done normally in the p-well regions are superimposed. In one such process the configuration is like that in FIG. 3. The base contact is formed by an n-well region and by the implants used in the nMOS source/drain regions. One may choose to include or omit the implants done in the core nMOS during the core nMOS LDD extender implant and pocket implant steps. Likewise, one may choose to include or omit the implants used in any other nMOS in the CMOS flow such as the I/O nMOS. The emitter contact is formed by the implants used in the pMOS source/drain regions. One may choose to include or omit the implants done in the core pMOS during the core pMOS LDD extender and pocket implants steps. Likewise one may choose to include or omit the implants used in any other pMOS in the CMOS flow such as the I/O pMOS. The collector region below the base is the p-substrate and the high-energy retrograde boron implant that, in this case, is deeper than the corresponding phosphorus implant. The p-well region along with the implants used in the pMOS source/drain regions from the collector contact. The active regions may or may not be silicided or part of the regions may be silicided depending on the options available in the CMOS flow. Note that the pocket implants are always the opposite type as the source/drain; namely, for a pMOS the pocket is donor type while the LDD and source/drain are acceptor type.
A fourth is a triple well that allows several other options but this adds cost by adding more pattern and implant steps to the flow. The emitter contact is formed by the implants used in the nMOS source/drain regions. One may choose to include or omit the implants done in the core nMOS during the core nMOS LDD and pocket implant steps. Likewise one may choose to include or omit the implants used in any other nMOS in the CMOS flow such as the I/O. nMOS. The base region below the emitter contact is a p-well region. The base contact is formed by the implants used in the pMOS source/drain regions. The collector region is a deep n-well region formed, for example, by a high energy implant. The collector contact is formed by an n-well region and by the implants used in the nMOS source/drain regions. The active regions may or may not be silicided or part of the regions may be silicided depending on the options available in the CMOS flow. Note that the pocket implants are always the opposite type as the source/drain ; namely, for a pMOS the pocket is donor type while the LDD and the source/drain are acceptor type. The triple well (p-well, n-well, and deep n-well) process allows more bipolar structures than the one shown in FIG. 4.
It is highly desirable to provide an improved bipolar transistor with graded base without added mask in CMOS flows

Lateral bipolar junction transistor in CMOS flow