A non-magnetic wireless heating module is described. The module consists of a, preferably embossed, surface or plane and a dielectric surface or plane. The surface or plane is made of an inductive non-magnetic metal alloy that contains a first amagnetic metal or a first non-magnetic mixture of metals in a percentage between 85% and 99.99% by weight to the total weight and contains a second ferromagnetic or ferrimagnetic metal or a second ferromagnetic or ferrimagnetic mixture of metals in a percentage between 0.01% and 15% by weight to the total weight. The wireless amagnetic heating module is inserted into a chamber (for example a pipe or a portion of a pipe, a cubic container, a cistern . . . ) for the passage or storage of fluids, liquids, gases or solids; when the wireless amagnetic heating module is subjected to a variable electromagnetic field, it heats up, allowing heating, drying, passage of phase, . . . of the material in contact with it and contained in the chamber.

Many industrial and domestic processes involve heating a fluid, a solid or a gas contained within a chamber of different sizes and shapes (for example a tube or a portion of a pipe, a cubic container, a cistern . . . ). Consider, for example, industrial drying processes or water heating in the civil sector.
Conventionally, the material to be heated can be heated through external heating sources which insist on the walls of the chamber (for example a cistern, a pipe, . . . ) which, in turn, condense and irradiate the material inside it; or it is possible to heat a material in a chamber through the passage of a hot fluid, more commonly hot air, which in addition to releasing heat to the material, can act as a carrier to remove excess water as occurs for example for drying bed fluid processes.
The most known external heat sources are free flame, infrared and electrical resistors.
In heating with open flame, the heat is generated by the combustion of gaseous or liquid fuels such as gas, oil, wood, pellets, rapeseed oil, . . . . The free flame is excellent for those processes that require very high temperatures, but it is one of the most inefficient and difficult to control systems. Furthermore, since the combustion phenomenon is an exothermic redox reaction, the reaction residues depend on the fuel used, among which are common biomass and wood, strongly polluting the release of fine dust in the atmosphere, and the methane gas responsible of the release of carbon dioxide into the air, one of the largest greenhouse gases. The use of fuels, moreover, requires a periodical control of the state of the ducts to prevent dangerous leaks, with consequent additional maintenance costs.
Infrared radiation is part of the electromagnetic spectrum: those with a wavelength of between 700 nm and 1 mm, with a frequency lower than that of visible light but higher than that of radio waves. Infrared heaters are generally quite compact and allow accurate temperature control, and the heat can be applied evenly and extensively. However, due to the nature of the process itself, the emission behaviour of the infrared radiator must be optimally adapted to the absorption behaviour of the product to be treated, so it is not possible to establish a standard parameter with maximum efficiency common to multiple uses and applications.
The electric heaters are characterized by a concentration of heat on small surfaces. At the basis of heat generation, there is a resistive process with a continuous passage of electric current that insists on the metal structure of the resistances causing wear and malfunction over time with reduction of overall efficiency. Moreover, as for the free flame, this type of heating manifests significant energy dispersions on the outside by irradiation and conduction and energy consumption higher than the real energy requirement of the process.
It is also known that a larger contact surface allows a greater and more efficient heat exchange with the material to be heated or dried. This important principle takes advantage of some solutions such as the equicurrent and countercurrent rotary dryers and the fluid bed dryer which previously provides the heating of drying fluids (e.g. air). Said fluids are excellent vectors for removing excess water vapor in the drying chamber, but they are however a very poor heat exchanger because they have reduced contact surfaces due to the low density of the gaseous phase.
An optimal solution could be a heating source with a large contact surface and a variable thermal power density that can be placed inside the chamber where the material to be heated is housed.
An optimal solution could be to place an electromagnetic induction heating module inside the container or the drying chamber.
One of the advantages of electromagnetic induction is the ability to work remote heating sources with respect to the emitter of the electromagnetic wave and thus work safely, wirelessly.
In fact, it is known that by subjecting a metallic element to a magnetic field variable in space and/or time, electric currents are induced in the element itself; these electric currents are defined parasitic currents (or Eddy currents) and, in their turn, they heat the metal element by Joule effect.
A wireless heating module for heating fluids or solids or gases moving or stored in closed environments, inserted into the chamber containing the material to be heated, would bring considerable advantages including an important electrothermal safety and a reduced heat dispersion thanks to the concentration of the heat inside the chamber and the complete immersion of the material in the fluid, solid, gas . . . .
However, not all metals are suitable for heating processes that exploit this phenomenon; in fact, it is necessary to use a metal that has electrical resistance sufficiently low to efficiently conduct the eddy current induced, but beyond a certain lower limit of the electrical resistance the sufficient energy dissipation is not obtained to heat the object by Joule effect. Therefore, over time, ferromagnetic or high ferrimagnetic metals have been preferred, responding to electromagnetic fields, so much that de facto standards have been created in the reference markets.
The most commonly used ferromagnetic materials are iron, cobalt and nickel and their alloys.
However, ferromagnetic materials have strong limits in their use for heating processes for fluids, solids and gases, stationary or in transition, since they have low thermal conductivity which needs to be compensated with important inertial masses; moreover they can not come into direct contact with edible material or material that could absorb iron, cobalt and nickel particles or thermolabile material that requires a careful temperature control.
The inductive process with ferromagnetic metals is physiologically subject to the risk of suffering from important and uncontrolled thermal drifts that could compromise the material contained in the chamber.
All these limits make the use of non-ferromagnetic metals desirable, characterized by maximum thermal conductivity, lightness and ductility.

This patent is subject to a terminal disclaimer.


A digital image system which transmits digital image data, and more particularly, to a digital image system in a high definition multimedia interface (HDMI) format or a digital visual interface (DVI) format.

1. Technical Field
The present invention generally relates to a digital image system which transmits digital image data, and more particularly, to a digital image system in a high definition multimedia interface (HDMI) format or a digital visual interface (DVI) format.
2. Background Art
Referring to FIG. 1, a digital image system in a basic high definition multimedia interface (HDMI) format includes a host device 11, a display device 12, and electric cables. The electric cables are connected between input/output terminals TH1 through TH14 of the host device 11 and input/output terminals TD1 through TD14 of the display device 12.
The host device 11 includes an HDMI transmission unit 111 and a graphic control unit 112. The display device 12 includes a serial electrically erasable and programmable read only memory (EEPROM) 122 and an HDMI reception unit 121.
The HDMI transmission unit 111 in the host device 11 converts audio data SAUD, a clock signal SCS, and digital image data SVID into transition minimized differential signaling (TMDS) signals in an HDMI format and outputs the TMDS signals to the display device 12.
More specifically, the audio data SAUD and the digital image data SVID are processed by the HDMI transmission unit 111 and are output as red signals SR+ and SR− of 2 channels, green signals SG+ and SG− of 2 channels, and blue signals SB+ and SB− of 2 channels. The clock signal SCS is processed by the HDMI transmission unit 111 and is output as clock signals CLK+ and CLK− of 2 channels.
The serial EEPROM 122 in the display device 12 stores extended display identification data (EDID) of the display device 12 and provides the EDID to the graphic control unit 112 of the host device 11 according to an inter-integrated circuit (I2C) communication protocol.
In I2C communication, the graphic control unit 112 exchanges data signals SDA with the serial EEPROM 122 while transmitting a clock signal SCL to the serial EEPROM 122. The graphic control unit 112 provides a power-supply potential of +5V and a ground potential GND to the serial EEPROM 122 for an operation of the serial EEPROM 122. The display device 12 applies a hot plug detect (HPD) signal voltage HPD to the graphic control unit 112 and thus the graphic control unit 112 recognizes that the graphic control unit 112 is connected with the display device 12. Reserved terminals TH14 and TD14 that are not used are referred to as no-connection (NC) terminals.
The graphic control unit 112 in the host device 11 controls an operation of the HDMI transmission unit 111 according to the EDID.
The HDMI reception unit 121 in the display device 12 restores the audio data SAUD, the clock signal SCS, and the digital image data SVID from the TMDS signals in the HDMI format, which have been received from the host device 11.
FIG. 2 illustrates a digital image system in a general digital visual interface (DVI) format. In FIGS. 1 and 2, like reference numerals refer to like elements. Hereinafter, only differences between the digital image system illustrated in FIG. 2 and the digital image system illustrated in FIG. 1 will be described. Referring to FIG. 1, the digital image system in a basic DVI format includes a host device 21, a display device 22, and electric cables. The electric cables are connected between input/output terminals TH1 through TH14 of the host device 21 and input/output terminals TD1 through TD14 of the display device 22.
The host device 21 includes a TMDS transmission unit 211 and a graphic control unit 212. The display device 22 includes a serial EEPROM 222 and a TMDS reception unit 221.
The TMDS transmission unit 211 in the host device 11 converts a clock signal SCS and digital image data SVID into TMDS signals in a DVI format and outputs the TMDS signals to the display device 22.
The serial EEPROM 222 in the display device 22 stores EDID of the display device 22 and provides the EDID to the graphic control unit 212 of the host device 21 according to the I2C communication protocol.
The graphic control unit 212 of the host device 21 controls an operation of the TMDS transmission unit 211 according to the EDID.
The TMDS reception unit 221 in the display device 22 restores the clock signal SCS and the digital image data SVID from the TMDS signals in the DVI format, which have been received from the host device 21.
In the digital image system illustrated in FIG. 1 or 2, the maximum length between the host device 11 or 21 and the display device 12 or 22 is limited to about 10 m. When a distance between the host device 11 or 21 and the display device 12 or 22 is long, a transmission/reception reinforcement device such as an optical cable module, a repeater, or an equalizer is required.
In a digital image system where the host device 11 or 21 transmits digital image data to the display device 12 or 22 using the transmission/reception reinforcement device, transmission of the digital image data is not smooth if an external power supply of the transmission/reception reinforcement device drops and the transmission may not be performed at all if the external power supply is interrupted.

Digital image system transmitting digital image data


A barley cultivar, designated Oreana, is disclosed. The disclosure relates to seeds, plants, and derivatives of barley cultivar Oreana, and methods for producing a barley plant by crossing Oreana with itself or another barley variety. The disclosure also relates to barley varieties or breeding varieties and plant parts derived from barley Oreana, to methods for producing other barley varieties, lines, or plant parts derived from barley Oreana, and to the barley plants, varieties, and their parts derived from the use of those methods. The disclosure further relates to hybrid barley seeds and plants produced by crossing barley cultivar Oreana with another barley cultivar. The disclosure relates to methods for developing other barley varieties or breeding lines derived from variety Oreana, including cell and tissue cultures and haploid systems.

There are numerous steps in the development of a novel, desirable plant germplasm through plant breeding. Plant breeding can begin with the analysis and definition of problems and weaknesses of the current germplasm (e.g., seeds or plant tissue), the establishment of breeding goals, and the establishment of breeding objectives. Then, a germplasm that possess the traits to meet the breeding goals can be selected. The purpose of such plant breeding can be to create an improved combination of desirable traits from multiple parental germplasms in a single variety.
Barley, a type of plant than can be bred, is an important and valuable field crop. Barley breeders seek to develop stable, high yielding barley varieties that are agronomically sound and have good grain quality for its intended use. Barley varieties may differ from each other in one or more traits and can be classified and differentiated according to the specific traits they possess. For example, barley can be two-rowed or six-rowed, which refers to the number and positioning of kernels on the spike (otherwise known as the head). Barley can also be classified as spring barley or winter barley, referring to the growth habit, or by the adherence of hulls on the seed, or by the type of starch in the seed. Additionally, barley varieties can be differentiated based on grain yield, lodging, spike attitude, structural growth habits, and flag leaf shape and length. Additional traits may also differentiate various barley lines.


The cable tensioner has a pair of elongated platforms mounted side-by-side on a base with each having drive and driven geared pulleys with geared idler pulleys therebetween arranged along the edge of the platform confronting the other platform. A geared endless belt encircles the pulleys on each platform and has a grooved exterior machined to match the cable being handled. The drive and driven pulleys are adjusted to tension the associated belts and the idler pulleys are pressed towards the idlers on the adjacent platform. The base is mounted to permit sideways motion plus pivoting, tilting and rising and falling as a unit.

For proper spooling of a cable on a winch drum, it is necessary to keep a certain amount of tension on the cable for a neat, tight spool. When paying out cable from a drum it is necessary to keep tension on the line to prevent what is commonly called "birdcaging". This occurs when the winch drum pays out line faster than the line is retrieved or taken up.
One type of cable tensioner generally has one driven sheave and one or two idler sheaves with one or more pinch rollers to force the wire rope down into the sheave grooves causing a wedging action on the cable. To obtain the necessary friction area to lower the pounds per square inch force it is necessary to have an "S" curve cable lead to obtain the friction area required. These tensioners are required to handle the full line pull of the winch drum and must have sheave diameters proportionally larger than the cable diameter to avoid excessive bending of the cable.
Another type of tensioner presently utilized has compressible floating sides to the friction sheave along with a pinch roller to provide the necessary friction. Again it is necessary to have an "S" curve in the cable in the tensioner plus again having to handle the full winch load with the necessary large sheaves.
The two types described above cause constant bending, flexing and pinching of the wire rope causing premature failure of the cable.
Still another type of tensioner simply has the wire rope pinched in between two sheaves. In order to develop any appreciable amount of line pull it is necessary to place considerable pressure on the cable which then also results in premature cable failure.
Attention is directed to U.S. Pat. Nos. 4,469,267 and 2,647,699.
An object of this invention is to provide a cable tensioner which will maintain a constant tension on a cable without any bending, flexing or pinching of the cable.
Another object is to provide a tensioner which will follow the cable lead which means the structure does not change the direction of the cable lead (and load). It only has to support its own weight and some of the weight of the cable between the drum and the guide pulley. The tensioner must also handle the line pull under some conditions.


For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.

1. Field of the Invention
Generally, the subject matter disclosed herein relates to the field of manufacturing integrated circuits, and, more particularly, to chemical mechanical polishing (CMP) or generally planarizing processes and tools used for the formation of advanced semiconductor features, such as gate electrode structures, in which different materials have to be concurrently removed.
2. Description of the Related Art
The fabrication of modern integrated circuits requires a plurality of individual process steps involving the deposition of conductive, semiconductive or insulating layers on an appropriate substrate. After the deposition of one or more materials, device features are produced by patterning or otherwise treating the materials with well-known means, such as photolithography and etching. As a consequence, by patterning a material layer or layer system, typically, a certain topography will be created that also affects deposition and patterning of subsequent layers. Since sophisticated integrated circuits require the formation of a plurality of subsequent levels, it has become standard practice to periodically planarize the surface of the substrate so as to provide well-defined conditions for the deposition and patterning of subsequent material layers.
In this respect, CMP has become a widely used process technique for reducing imperfections in the substrate topography caused by preceding processes in order to establish enhanced conditions for a subsequent process, such as photolithography and the like. The polishing process itself causes mechanical damage to the polished surface, however, in an extremely low range, i.e., at an atomic level, depending on the process conditions. Chemical mechanical polishing typically requires a substrate to be attached to a carrier, a so-called polishing head, such that the substrate surface to be planarized is exposed and may be placed against a polishing pad. The polishing head and polishing pad are moved relative to each other by usually individually controlling the movements of the polishing head and the polishing pad. Typically, the head and pad are rotated against each other while the relative motion is controlled to locally achieve a target material removal rate. During the polishing operation, a slurry solution that may include a chemically reactive agent and abrasive particles is supplied to the surface of the polishing pad, thereby initiating a chemical reaction with the exposed surface material and also creating a physical removal component by the abrasive particles, which may preferably act on the reaction product generated by the chemical reaction.
One problem involved in the chemical mechanical polishing of substrates is the very different removal rates of differing materials, such as of a metal and a dielectric material, or dielectric materials of different type, or dielectric materials and semiconductive materials.
The different removal rates may, thus, contribute to a pronounced surface topography, wherein, typically, the material having the higher removal rate is increasingly recessed, which may, thus, result in inferior process conditions for subsequent processes and performance of structural features. For example, when removing excess metal from a dielectric material layer having incorporated therein metal regions, at a final stage of the removal process, the dielectric material is increasingly exposed so that, in this phase of the polishing process, typically metal and dielectric material are present, wherein a certain overpolish time may then result in a certain degree of "dishing" of the metal region due to the higher removal rate compared to the dielectric material. On the other hand, since a certain degree of overpolished time is typically required for completely removing the metal material across the entire substrate surface, a certain amount of the dielectric material may also be removed, however, in a pattern related manner, thereby also contributing to a non-planar surface topography after the end of the polishing process. A pattern dependent removal rate may typically be observed for areas having a different ratio of materials that have to be concurrently polished at a certain process stage. That is, in areas with a high density of, for instance, metal regions, the fraction of metal material to dielectric material is different compared to an area in which a reduced number of metal features per unit area is present.
Consequently, although the CMP process technique is per se a promising approach for globally providing a planar surface topography, the removal of a material may require a specifically designed slurry solution, thereby enabling an appropriate adaptation of the process conditions to the specific manufacturing phase of a semiconductor device for one specific material, while the slurry may be less appropriate for the removal of another material. For example, by using a specifically designed slurry solution in combination with appropriately selected process parameters, such as down force, relative speed and the like, highly selective polishing recipes may be established, which may be advantageous for removing a material having a pronounced surface topography relative to an underlying material, which may act as a stop layer. For example, well-established and frequently used materials in semiconductor production are silicon dioxide and silicon nitride. Since these materials typically exhibit different removal rates for presently well-established CMP recipes, a well controllable selective removal process may be performed on the basis of CMP. For example, when forming sophisticated shallow trench isolation regions, a silicon nitride layer may typically act as a hard mask material during the etching of isolation trenches in the silicon layer and may also act as an efficient CMP stop layer after refilling the isolation trenches with a silicon dioxide material upon removing any excess portion thereof
In other situations, however, the different removal characteristics of silicon nitride and silicon dioxide may cause significant variations in device characteristics and may also negatively influence the further processing of complex semiconductor devices, in particular when even a third material has to be treated during a certain phase of the CMP process.
One important example for process conditions in which silicon nitride and silicon dioxide, in combination with a further material, may have to be removed in a highly non-selective manner is the exposure of a polysilicon material in a so-called replacement gate approach, which may frequently be used in sophisticated semiconductor devices, as will be explained in more detail with reference to FIGS. 1a-1c.
FIG. 1a schematically illustrates a cross-sectional view of a semiconductor device 100 in an advanced manufacturing stage. As illustrated, the device 100 may comprise a substrate 101 and a semiconductor layer 102, such as a silicon layer, in and above which are formed circuit elements 130, which may represent any circuit elements, such as transistors, capacitors, resistors, electronic fuses and the like. In the example shown, the circuit features 130 are illustrated in the form of gate electrode structures of field effect transistors. The gate electrode structures 130 typically comprise a gate dielectric material 131, such as a silicon dioxide based material, possibly in combination with a high-k dielectric material, and a polysilicon material 132. Furthermore, typically, a dielectric cap material 133 in the form of silicon nitride is provided above the material 132. Furthermore, a sidewall spacer structure 134, for instance comprised of silicon nitride, silicon dioxide and the like, is formed on sidewalls of the gate electrode structures 130.
The gate electrode structures 130 may represent sophisticated circuit features with a critical dimension, i.e., a length, in FIG. 1a, the horizontal extension of the electrode material 132, of 40 nm and less, while a height of the material 132 may be 50-100 nm and more, depending on the overall device and process requirements. Since the electric performance of the gate electrode structures 130 may no longer be appropriate for many types of performance driven field effect transistors, it has been proposed to replace the well-established materials silicon dioxide and polysilicon by more sophisticated material systems, such as high-k dielectric materials in combination with highly conductive electrode metals. Since the implementation of any such sophisticated material systems in an early manufacturing stage, i.e., upon forming the gate electrode structures 130, is very complex, in other approaches, the gate electrode structures 130 are formed on the basis of well-established materials and patterning strategies and at least the polysilicon material 132 is to be placed in a later manufacturing stage, i.e., after performing any high temperature treatments and other critical processes, which may otherwise result in a shift or variation of the electronic characteristics of sophisticated gate electrode structures. To this end, in some well-established strategies, an interlayer dielectric material 120 is typically provided above the gate electrode structures 130. For this purpose, well-established materials, such as silicon nitride and silicon dioxide, are frequently used, for instance in the form of a silicon nitride layer 121 that may act as an etch stop material during the further processing of the device 100 and which may also provide superior diffusion stopping capabilities, for instance in terms of avoiding copper diffusion into sensitive device areas upon forming a complex metallization system on the basis of copper and low-k dielectric materials. Furthermore, a silicon dioxide layer 122 is typically provided above the silicon nitride material 121 and provides the desired chemical and mechanical characteristics for passivating any circuit elements formed in and above the semiconductor layer 102. Consequently, depending on the density of gate electrode structures 130 and the geometry thereof, a more or less pronounced surface topography is created upon forming the interlayer dielectric material 120, thereby also requiring a certain degree of overfilling in order to reliably fill the spaces between the individual circuit elements 130.
The device 100 as illustrated in FIG. 1a may be formed on the basis of well-established process techniques including sophisticated lithography and etch techniques for patterning the gate electrode structures 130, followed by any further processes for forming drain and source regions of any appropriate profile in the semiconductor layer 102 associated with appropriate high temperature anneal processes. Thereafter, the materials 121 and 122 are deposited on the basis of well-established process techniques, such as plasma enhanced chemical vapor deposition (CVD) and the like. As discussed above, for a replacement gate approach, the polysilicon material 132 is to be exposed in order to enable an efficient removal of this material and the deposition of sophisticated gate materials, such as high-k materials, work function metals, highly conductive electrode metals and the like. In order to remove any excess portion of the interlayer dielectric material 120, typically a CMP process 110 or a sequence of CMP processes is applied. In a first step or phase of the process 110, the excess portion of the silicon dioxide material 122 is removed, which may be accomplished on the basis of well-established process recipes, for instance by using available standard slurry materials including silica particles as abrasive particles. On the basis of any such available slurry solutions, appropriate process conditions can be established in order to remove the material 122 at removal rates enabling a desired high controllability. Consequently, an efficient smoothing of the surface topography may be accomplished during the advance of the polishing process when removing a portion of the material layer 122.
FIG. 1b schematically illustrates the device 100 in an advanced stage of the process 110, in which increasingly the material of the silicon nitride layer 121 on top of the gate electrode structures 130 is exposed. Available slurry materials including silica, however, typically exhibit a much higher removal rate for silicon dioxide material and also for polysilicon material relative to the removal rate for silicon nitride material, which may be taken advantage of by using the silicon nitride material 121 as a stop layer. On the other hand, upon continuing the removal process on the basis of these slurry materials, the reduced removal rate of the silicon nitride material may require pronounced process times to remove the exposed portion of the layer 121 and to finally remove the dielectric cap material 133, which would result in undue recessing of the silicon dioxide material 122. It would, therefore, be desirable to continue the further removal process on the basis of substantially non-selective process conditions, which, however, may require a sophisticated slurry material that provides similar etch rates of silicon dioxide and silicon nitride, while at the same time, at a final phase of the removal process, polysilicon material also has to be removed to a certain degree in order to ensure a reliable exposure of the polysilicon material, since any nitride residues would unduly affect the further processing of the device.
It turns out, however, that the limited number of commercially available slurry solutions having a substantially matched removal rate for silicon dioxide and silicon nitride have to be used within a very narrow process window, thereby contributing to a reduced degree of controllability, since any small variations in process conditions may result in an over-proportional deviation of the process result. Furthermore, the commercially available slurry solutions may show a pronounced dependence on the pattern density, that is, the removal rates may generally be different above densely packed device areas relative to less dense device regions.
FIG. 1c schematically illustrates a typical process result obtained on the basis of commercially available slurry solutions, wherein a certain degree of recessing may be observed in the polysilicon material 132 and, in particular, in the silicon dioxide material 122, which may negatively affect the further processing. For example, the recessing in the polysilicon material 132 may result in minute silicon nitride residues located at the edge of the gate electrode structures 130, which may cause an incomplete removal of the material 132 during the subsequent complex etch process. On the other hand, the recessing of the silicon dioxide material 122 may provide very sophisticated process conditions upon refilling the gate electrode structures 130 by metal materials and removing any excess metal from the gate electrode structures 130. In this case, the recessed areas in the silicon dioxide material may require excessive overpolish times in order to reliably remove any metal residues, thereby generally reducing the overall height of the gate electrode structures, while nevertheless a certain probability of leaving any metal residues and, thus, leakage paths may exist.
The present disclosure is directed to various methods and devices that may avoid, or at least reduce, the effects of one or more of the problems identified above.

Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry


Method, system, and computer program product are provided for visualization of user sentiment for one or more product features. The method may include: providing one or more product image templates, a product image template having a location representing a product feature; obtaining an aggregated sentiment score for a product feature from user generated content; mapping the aggregated sentiment score to a score visualization on a visualization scale; and representing the location in the product image template relating to the product feature with the score visualization for the aggregated sentiment score to provide a visualization of the product. The method may also include: collecting one or more text expressions from user generated content relating to a product feature; representing one or more text expressions in relation to the product feature in the product image template.

This invention relates to the field of user feedback for products. In particular, the invention relates to visualization of user sentiment for product features.
Opinion mining and sentiment analysis have become important tools for extracting insights about users' opinions and sentiments towards topics of interests, products, and services.
Traditionally, sentiment analysis tools consume large amounts of user generated content and extract sentiment polarities and opinions from such content on different topics or aspects of products. An aggregated score may be calculated for each sentiment polarity or opinion and this may be summarized.
Sentiment and opinion summarization is an important aspect, and several methods for summarization are known based on visualization. However, many sentiment visualization techniques are not intuitive enough for ordinary users who are neither visualization nor analytics experts.

Visualization of user sentiment for product features

International Business Machines Corporation


An electrode assembly and a secondary battery including the electrode assembly are disclosed. The electrode assembly includes a first electrode, a second electrode, and a separator disposed between the first and second electrodes. A film is disposed on at least one edge of at least one of the first and second electrodes.

1. Field
The present technology relates to an electrode assembly and a secondary battery including the electrode assembly.
2. Description of the Related Technology
Use of portable electronic devices has been increased with the rapid development of electronic, communication, and computer industries. Rechargeable secondary batteries are widely used as power sources of portable electronic devices.
A secondary battery typically includes a positive electrode, a negative electrode, and a separator disposed between the positive electrode and the negative electrode as an insulator.
The positive electrode and the negative electrode are typically insulated from each other. In addition, the positive electrode and the negative electrode are typically insulated from other parts of the secondary battery for preventing unnecessary electric contacts.
However, since the positive electrode or the negative electrode expands and contracts while the secondary battery is charged and discharged, the positive electrode or the negative electrode may develop a short circuit.

Electrode assembly and secondary battery including the same


An internal combustion is capable of switching, during engine operation, between a low-temperature combustion state in which an intake air with a high EGR rate is burned to operate the engine, and a normal combustion state in which an intake air with a low EGR rate is burned to operate the engine. In the internal combustion engine, a pilot injection is executed in addition to a main fuel injection, and furthermore the execution of the pilot injection is restricted during the engine operation with a combustion state switched to the low-temperature combustion state.

This disclosure of Japanese Patent Application No. 2001-367118 filed on Nov. 30, 2001 including the specification, drawings and abstract is incorporated herein by reference in its entirety.
1. Field of Invention
The invention relates to an internal combustion engine. More specifically, the invention relates to an internal combustion engine capable of switching, during engine operation, between two combustion states in both of which combustion temperature and oxygen concentration differ greatly, respectively.
2. Description of Related Art
In general, various measures are taken with respect to a diesel engine, which is one type of a lean-burn internal combustion engine, so as to reduce emission of soot and nitrogen oxides (NOx). Such measures include, for example, a low-temperature combustion technology disclosed in the Japanese Patent Laid-Open Publication No. 2000-64911.
According to the low-temperature combustion technology disclosed in this Publication, a ratio of EGR gas contained in intake air subjected to combustion is controlled by increasing and reducing the amount of the EGR gas and air which flow into a combustion chamber, thereby enabling two engine combustion states, both of which combustion temperature and oxygen concentration differ greatly, respectively.
More specifically, in order to secure driveability during high-load operation, a normal combustion is carried out while regulating the ratio of the EGR gas contained in intake air to the appropriate value. On the other hand, during idling and low-load operation, the ratio of the EGR gas is significantly increased so as to significantly reduce the combustion temperature and the oxygen concentration, and the combustion state is switched into a so-called xe2x80x9clow-temperature combustionxe2x80x9d for reducing the amount of soot (smoke) and nitrogen oxides (NOx) generated.
Meanwhile, the diesel engine is operated under an excess air condition in which A/F reaches 30 to 40 in a normal combustion state, and thus a great amount of air (oxygen) remains in exhaust gas after the combustion. This means that a large amount of oxygen is also mixed in the EGR gas, or the exhaust gas.
Therefore, simply increasing the amount of the EGR gas only makes a slow change in the oxygen concentration and the amount of the EGR gas, and thus it may require some time to switch into the low-temperature combustion which is achieved at a high EGR rate. Furthermore, during the low-temperature combustion, the combustion state becomes unstable due to factors such as an increase in the EGR gas, or inert gas, and an engine output may also decrease. To deal with these conditions, various engine controls are used in general so as to reduce a time required for the switching and to secure a combustion stability.
More specifically, in addition to an opening angle control of an EGR valve, an opening angle control of an intake throttle valve, which significantly reduces the amount of air (oxygen) in the intake air by reducing the amount of air relative to the intake air, is carried out. Furthermore, an overshoot control is executed for switching the combustion state at an early stage by once overshooting the amount of the opening angle control of the EGR valve and the intake throttle valve. Meanwhile, a fuel injection system increases and corrects a fuel injection volume, and advances and corrects a fuel injection timing, such that misfire sue to the low-temperature combustion and a decrease in engine output are suppressed.
In the internal combustion engine as described above, switching of combustion state is optimized by performing various engine controls. The aforementioned engine controls are certainly required when returning to the normal combustion state. Processing of such controls are in accordance with the combustion state on each occasion.
One of general fuel injection technologies for diesel engines is a xe2x80x9cpilot injection.xe2x80x9d
The pilot injection injects into a combustion chamber in advance some of the engine fuel to be injected for main injection, so as to create a heat source which serves as a pilot burner for the main combustion, thereby suppressing a sudden increase in a combustion pressure during the main combustion and a rise in the combustion temperature. That is, combustion becomes slow during the execution of the pilot injection, and thus combustion noise can be reduced and emission of harmful components (such as soot and nitrogen oxides NOx) contained in the exhaust gas can be suppressed.
Through the combined use of the low-temperature combustion and the pilot injection, generation of soot (smoke) and emission of nitrogen oxides (NOx) can be suppressed, and at the same time, the combustion noise can be reduced so as to achieve an environment for comfortable driving over the entire operation range.
Meanwhile, according to the inventors and the like of the invention, various improvements were made with respect to the combination of the low-temperature combustion and the pilot injection as mentioned above.
First, if the focus is laid on the low-temperature combustion, combustion becomes slow due to insufficient oxygen and a combustion pressure drop during the low-temperature combustion. As a result, the combustion noise can be reduced and the emission of harmful components can be suppressed as explained above. That is, the same effect obtained with the pilot injection can be obtained during the low-temperature combustion, and thus the pilot injection which has little influence on the engine output results in unnecessary fuel consumption.
Based on the foregoing explanations, it can not always be said that the pilot injection that has generally been executed is an effective fuel injection control technology for all operation ranges.
Furthermore, if the execution or non-execution of the pilot injection is determined upon a request for switching the combustion state, the combustion noise temporarily increases while the combustion state is switched, namely, during transition. That is, if the pilot injection is prohibited despite that the low-temperature combustion state is not yet established, the combustion noise that has been suppressed by the pilot injection is regenerated. Furthermore, if the pilot injection is restarted after the establishment of the normal combustion state, the combustion noise that has been suppressed by the low-temperature combustion temporarily increases during transition from the low-temperature combustion to the normal combustion.
Foregoing descriptions concludes that a key point in the development of an internal combustion engine that uses the low-temperature combustion together with the pilot injection is how to control a prohibited period of the pilot injection in order to achieve both the combustion noise reduction and the pilot injection prohibition.
It is an object of the invention to provide an internal combustion engine provided with an engine control technology capable of regulating pilot injection during low-temperature combustion and suppressing generation of combustion noise caused by prohibition of pilot injection.
To solve the technical problem stated above, the following structure was applied.
That is, an internal combustion engine according to an aspect of the invention has a combustion characteristic in which the amount of soot generated during combustion gradually reaches its peak when a ratio of inert gas contained in an air-fuel mixture subjected to combustion approaches a predetermined value, and if the ratio is further increased, the generation of soot is reduced. The internal combustion engine further includes a control unit for switching between a first combustion state in which generation of soot is restrained by suppressing the ratio of the inert gas below the predetermined value and a second combustion state in which generation of soot is restrained by maintaining the ratio of the inert gas above the predetermined value, and a fuel injection valve which stops execution of, in addition to main fuel injection for the internal combustion engine, the pilot injection which occurs prior to the main fuel injection during a predetermined period at least including a period of the second combustion state.
In the aspect as structured as above, the pilot injection is actively stopped during a period of the second combustion state in which a great amount of EGR gas exists and the combustion becomes slow. That is, the pilot injection is stopped during a period including the second combustion state in which combustion becomes slow, so as to avoid unnecessary fuel consumption due to execution of the pilot injection.
The predetermined period at least including the second combustion state according to the foregoing aspect may be a period defined only by a period of the second combustion state, and also assumes a case in which a part of the first combustion state is included. Furthermore, in the aforementioned aspect, the period of the second combustion state does not necessarily include an entire period of the second combustion state, and may be some period of the entire period of the second combustion state.

Internal combustion engine and control method of the same


A packaging material which comprises an aluminum foil or an aluminum-metallized biaxially stretched thermoplastic resin film and a polyolefin resin film having an elongation at rupture (JIS P 8113) in either of longitudinal or lateral direction of more than 1.5 times of that of the aluminum foil or the aluminum-metallized film laminated thereto through a modified polyolefin resin adhesive layer containing an adhesive polyolefin resin which is a graft modified polyolefin resin. The packaging material of the invention can be torn easily by hand, and therefore, taking out work is carried out safely and rapidly even in a dark room. Nevertheless, the physical strength and tear strength are great and, light-shielding can be secured safely. Such a packaging material can be manufactured inexpensively.

1. Field of the Invention
This invention relates to a packaging material for photosensitive materials such as photographic photosensitive materials.
2. Description of the Prior Art
Since the qualities of photographic photosensitive materials are damaged by even small amounts of light, gas or moisture, it is necessary that packaging materials have light-shielding, gas barrier and moistureproofness. Moreover, it is also required to have sufficient heat seal strength and physical strength in order to prevent pinholes, ruptures and punctures, through packaging, stocking and physical distribution.
Heretofore, as the packaging material having such properties, there are cross laminated films using two uniaxially stretched high density polyethylene resin films (U.S. Pat. No. 4,147,291) and laminated films containing a linear low density polyethylene resin film (U.S. Pat. No. 4,452,846).
Incidentally, photographic photosensitive materials placed in a sealing bag are carried in a dark room, and taken out of the bag there. Therefore, the bag cable of opening by hand without using a cutter is preferred in view of safety. However, the above conventional packaging materials are difficult to be opened by hand, though they are excellent in physical strength and heat seal strength. Therefore, the inventor developed a packaging material easily openable by hand composed of an aluminum foil, a light shielding heat seal film layer having a prescribed resin composition laminated to one side of the aluminum foil in a delamination resistance stronger than a prescribed value through an anchor coat layer, and a restricted flexible sheet layer laminated to the other side (U.S. Pat. No. 4,708,896). However, the cost of the above packaging material is increased by the process for providing the anchor coat layer including the loss produced until the coating speed reaches a prescribed value and the loss produced by trimming both sides of the web-shaped packaging material. Moreover, the anchor coat layer is extremely thin, and it is difficult to coat in an uniform thickness resulting in variable openability.

Packaging material for photosensitive materials


The present invention relates to a device for cleaning an animal's paw. Specifically, the paw cleaning device easily and efficiently removes dirt and debris from the paw of a pet. The paw cleaning device includes an elongated body with a splashguard designed to receive the paw of a pet and further the method for using the paw cleaning device to clean the pet's paw.

The number of U.S. households that include an animal continues to rise. These households typically include at least one companion animal such as a dog or cat. In many instances companion animals are viewed as part of the family and spend more time in the home than outside. This desire by pet owners to have their animals close presents one major problem, especially with dogs, pets tend to track dirt and mud into an owner's home. In addition to dirt a pet could also track in chemicals or other harmful substances. The soiling of a pet's paws is a necessary evil since it is almost always unavoidable that a pet, especially a dog, must be let outside for excrement of bodily waste and exercise. Because a pet typically goes outside a few times a day it is unavoidable that the pet's paws will become soiled from time to time which then leads to dirt and debris tracked into the home.
Traditionally and still currently used by many pet owners, the pet owners are required to bath the entire animal or manually wash each paw by hand with water and a towel. This scenario is neither easy nor efficient. Both require an investment of time and typically results in the failed attempt at limiting the pet's movement only to end up with a partially clean pet and either water all over the floor of the home or soiled and dirty dripping towels. Therefore a need exists for a convenient device that allows a pet owner to easily and efficiently wash the paws of a pet.
Additionally, various devices have been proposed that are designed to wash the paws of an animal. These devices in certain instances are passive cleaning devices that require the animal to walk into or place the animal's paws in a basin and then utilizes reciprocating brushes or other cleaning elements such as foam and sponge like materials to clean the paws. These devices may clean the pads of the paw, but any dirt or mud that is on the upper surface of the paw or slightly up the lower leg of the pet will not make contact with the cleaning elements and therefore remain. Additionally, these devices do not always work well at keeping the water and cleaning material in a basin when cleaning an excited pet, nor are they easily transportable or easy to store. Further, some past devices have been designed to fit over the paw, but each of these are cumbersome and difficult to use. These devises also have numerous parts and pieces that require constant cleaning and maintenance. These devices are not designed to prevent the water or cleaning agents from splashing out of the devices, which is of particular concern when dealing with an animal with unpredictable behavior.
Therefore a need exists for a handheld cleaning device that easily and efficiently cleans an animal's paw. The handheld device allows a pet owner to hold a single product and easily clean the animal's paw without spilling or splashing water or cleaning elements during the cleaning process. Further, the need exists for a device that can easily be cleaned and stored for later use and designed to handle rough use that is typically present when the cleaning of an animal is desired.

Handheld device for cleaning an animal's paw and method of use


A device package for radio frequency transceivers that comprises radio electronics, a filter and an antenna. The filter and antenna are realized using one or more metallization layers in the housing of the device package. The filter and antenna in the housing of the device package allows the realization of a compact RF transceiver with a small form-factor.

The trend of the design of many portable electronic devices is towards smaller devices for portability, aesthetics, and other reasons. Examples of portable electronic devices include mobile radio frequency (RF) transceivers, including cellular mobile handsets, wireless local area networks (WLAN) and the like. WLAN transceivers have recently become increasingly prevalent with the USA Federal Communications Commission's (FCC) allocation of 300 MHz bandwidth in the 5 GHz frequency band for the Unlicensed National Information Infrastructure (UNII) and with the European High Performance Radio Local Area Network Type 2 (HIPERLAN/2) system.
Traditionally, the complete RF transceiver is constructed by a number of interconnected integrated circuit (IC) dies (that are packaged in their respective IC packages) on a motherboard with passive components, and external parts: filter, and antenna (and associated shielding). The IC dies are traditionally and usually assembled in epoxy resin or in ceramic packages. In this traditional approach, the primary functions of the package are simply a means of interconnecting the integrated circuit die to the external world (the pins of the IC package) and a means of protecting the IC die for reliability.
With technological advances in IC technology, the functionality of the several IC dies in their respective IC packages and most of the passive components of the complete RF transceiver can now be realized (in part depending on the specific architecture of the RF transceiver) by a single IC die and/or packaged into a single device package. In IC fabrication technology, the downscaling of the minimum feature size of the fabrication technology allows more circuitry to be realized in a given IC die area. For some electronic systems, a complete system can be realized on a single IC, commonly known as System-on-Chip (SoC), and the complete system is packaged into a single device package. In IC packaging technology, a plurality of IC dies may be stacked and interconnected, commonly known as stacked die package using 3D packaging technologies, and/or several interconnected IC dies and passive components on a single substrate. For some electronic systems, a complete system is packaged into a single device package, commonly known as System-in-Package (SiP).
FIG. 1 depicts the functional blocks of RF Transceiver 4 that includes three separate modules: Antenna 1, Filter 2 and Radio Electronics 3. Note that Radio Electronics 3 may comprise a single or a plurality of IC packages and/or passive components, and they may be placed on a substrate and/or a printed circuit board motherboard. In traditional designs, the components in Radio Electronics are assembled on a motherboard and are connected to Filter 2 and Antenna 1. Antenna 1 and Filter 2 are usually connected by ports with a common impedance.
The bulk of Radio Electronics 3 is traditionally realized in Bipolar, Silicon-Germanium and Gallium Arsenic technologies due to their high unity gain cut-off frequency. However, with the continuing downscaling of Complementary Metal Oxide Semiconductor (CMOS) technology and for cost considerations, Radio Electronics 3 is now largely realized in CMOS. For example, deep submicron CMOS technology such as 0.18 μm or smaller dimensioned CMOS technology can be used to realize radio circuits operating in many frequencies including the 5 GHz range. As a result of continuing downscaling, the bulk of Radio Electronics 3 can now be realized by a single IC die or a plurality of IC dies in a single device package, or a single or a plurality of IC dies and passive components on a substrate in a single device package. FIG. 2 depicts this prior-art RF Transceiver 4 realization where IC Die 8 and Passive Component 7 are placed Substrate 6, all within Cavity 9 of Device Package 5. Radio Electronics 3 may comprise Substrate 6, Passive Component 7 and IC Die 8, and depending on the specific architecture of and technology used for RF Transceiver 4, Passive Component 7 and/or Substrate 6 may not be required. In some prior-art realizations, Filter 2 may also be realized on and/or embedded in Substrate 6, or it may be external to Device Package 5 as depicted in FIG. 2, or it may be integrated as part of the housing of Device Package 5 (refer to FIG. 4 later). Antenna 1, on the other hand, may be connected external to Device Package 5 as shown in FIG. 2 and/or it may be integrated as part of housing of Device Package 5 (refer to FIG. 3 later). In all prior-art designs, Antenna 1 and Filter 2 are not simultaneously realized as part of the housing of Device Package 5. These prior-art designs will now be described in some detail.
Antenna 1 is the component of the RF transceiver that radiates and/or receives the RF. In most transceivers, Antenna 1 serves as a reciprocal antenna—the same antenna serves as the radiating and as the receiving antenna. Antenna 1 is usually traditionally realized external to and separate of the other parts of RF Transceiver 4 because its properties are essentially independent thereof. The well-known antenna assemblies for transceivers include the external wire antenna (otherwise known as the whip antenna), the quarter wave straight wire antenna, the coiled quarter wave wire antenna, the Planar Inverted F Antenna (PIFA), and the patch antenna.
As abovementioned herein, a variation of prior-art designs depicted in FIG. 2 is shown in FIG. 3 where Antenna 1 is integrated into the housing of Device Package 5. This is somewhat prevalent in Bluetooth applications and the like. For example, Zhang in a paper entitled, "Integration of Microstrip Antenna on Cavity-Down Ceramic Ball Grid Array Package", Electronics Letters, Vol. 38, No. 22, pp. 1307-1308, October 2002 (Zhang 2002a), reported the integration of a microstrip antenna within the housing (surface of top section thereof) of Device Package 5, a thin 17×17×2 mm cavity down ceramic ball grid array (BGA) package. In this prior-art design, IC Die 8 is encapsulated in Device Package 5, a BGA package. In this design as in all prior-art designs, the Filter 2 is not simultaneously realized within the housing of Device Package 5. Instead as shown in FIG. 3, Filter 2 is either realized on/embedded in Substrate 6 where IC Die 8 and/or Passive Component 7 are also attached, or it may be external to Device Package 5. In cases where Device Package 5 is a high dielectric material such as Low-Temperature Co-fired Ceramic (LTCC), IC Die 8 and/or Passive Component 7 may be attached directly to the base and/or top of Cavity 9. A layer of the housing of Package Device 5 may serve as the substrate. Cavity 9 may be filled with a resin or hermetically sealed with a sealing metal cap.
In an article by Gaynor et. al. entitled, "System-in-Package for WLAN/PAN Aids Coexistence with Digital Cellular, High Frequency Electronics, pp. 30-41, January 2003 (Gaynor et. al., 2003), Antenna 1 realized as an integrated antenna module realized within Device Package 5 was reported. This prior-art design is as that depicted in FIG. 3 and is already previously described herein. There are also several other prior-art designs reporting the same design methodology, including that involving an integrated antenna for a Bluetooth transceiver. In all these prior-art designs, Antenna 1 and Filter 2 are not simultaneously part of the housing of Device Package 5.
The filtering function of Filter 2 is usually realized by external SAW and ceramic block filter technologies. Traditionally, as explained earlier herein, Filter 2 and other filters (depending on the architecture of and technology employed for RF Transceiver 4) are usually placed on the same motherboard as Radio IC 3 (that is encapsulated in one or more IC packages). In some designs, Filter 2 may be placed on a separate motherboard. Traditional radio circuit architectures including those that are embodied in Radio IC 3 require high Q analog bandpass filters for image frequency rejection and for channel selection and these high Q analogue bandpass filters are in addition to Filter 2. More recently, architectures such as zero- or low-IF require these high Q analogue filters with less stringent requirements, allowing them to be realized on-chip in IC Die 8.
With the advances in IC packaging as discussed previously herein, Filter 2 can be realized using Passive Components 7 on/embedded in Substrate 6 where IC Die 8 is attached thereof. In the case of that embedded in Substrate 6, Substrate 6 having several layers of dielectrics and metal laminates may realize Passive Components 7, including capacitor, resistors and baluns. The common materials for Substrate 6 include BT, Getek, BT-MG and LTCC. An article by Mathews et. al. entitled, "RF System in Package: Tradeoffs Govern the Cost, Size and Performance Equation", 2003 Chip Scale Review (Mathews et. al., 2003), describes the construction of some of these filters in Substrate 6.
As the high dielectric materials used for the housing of Device Package 5 are similar to typical substrate materials abovementioned herein, it is feasible to realize filters (previously on/embedded in Substrate 6) in the housing of Device Package 5 and Antenna 1 is external of Device Package 5. This is depicted in FIG. 4 where Filter 2 is realized in the housing of Device Package 5, IC Die 8 and Passive Component 7 are attached to Substrate 6 as shown or directly to one of the surfaces of Device Package 5 (not shown). In FIG. 4, it is possible that Filter 2 be part of any section of Device Package 5, although the top and bottom layers of Device Package 5 are prevalent.
For example, Ishizaki et.al. (Ishizaki et. al., 2003) in U.S. Pat. No. 6,456,172 described an invention where filters are realized in the bottom section of the housing of a cavity-down LTCC Device Package 5 wherein the housing having a plurality of laminated ceramic layers. Passive Components 7 and IC Die 8 may also be attached to one of the internal surfaces of the housing of Device Package 5. Note that Antenna 1 is not simultaneously realized within the housing of Device Package 5 and may be instead be realized external to Device Package 5.
In another prior-art design, Zhang in a paper entitled, "Integration of Dual-Mode RF Bandpass Filter on Ceramic Ball Grid Array Package", Electronics Letters, Vol. 38, No. 19, pp. 1106-1107, September 2002 (Zhang 2002b), reported the integration of an RF bandpass filter (Filter 2) on the top layer of a cavity down LTCC BGA Device Package 5. IC Die 8 may be attached to one of the surfaces of Device Package 5. Note that Antenna 1 is not simultaneously realized within the housing of Device Package 5 and may instead be realized external to Device Package 5.
In another prior-art design, Hsieh et.al. in a paper entitled, "Compact-size and Low Insertaion Loss Chebychev-function Bandpass Filters using Dual-Mode Patch Resonators", Electronics Letters, Vol. 37, No. 17, pp. 1070-1071, August 2001 (Hsieh et. al., 2001), reported a Chebychev-function bandpass using two square patch resonators, suitable as Filter 2. This filter may be realized on an appropriate high dielectric material such as LTCC or the like as abovementioned herein. In this prior-art work, the antenna was not described and is likely to be external to the device package.
The RF industry demands ever-smaller devices or equivalently, devices with a smaller form factor. As described above herein, the process of making smaller RF Transceivers 4 is essentially the process of increasing the integration density of the different sections of the RF transceiver. In most prior-art designs with a small form factor, the integration involves either realizing Antenna 1 in the housing of Device Package 5 or realizing Filter 2 (and other filters and Passive Components 7) in the housing of Device Package 5.
In the spirit of realizing RF Transceivers 4 with an even smaller form factor, it is highly desirable to have RF Transceiver 4 wherein Antenna 1 and Filter 2 (and where appropriate, other filters and Passive Components 7) are simultaneously realized in the housing of Device Package 5.

Integrating an antenna and a filter in the housing of a device package


Remote sensor units for a vehicle are described. An apparatus may comprise a satellite housing having an electrical connector interface portion, and an electrical connector disposed within the electrical connector interface portion of the satellite housing. The electrical connector may be arranged to conduct electrical signals for an electronic component having an electronic sensor operative to monitor conditions for a vehicle, the electrical connector comprising a capture portion at a first end and a pin portion at a second end, the capture portion having a pair of opposing mechanical contact elements arranged to receive at least one edge of the electronic component. Other embodiments are described and claimed.

A vehicle safety system typically relies upon a host of electronic sensors designed to monitor and provide data about certain conditions for the vehicle. For instance, an impact detection system may use various types of impact sensors to provide data to an airbag control unit which calculates an angle of impact, severity and force of an impact to determine whether to deploy one or more airbag stages. To improve performance, the electronic sensors are positioned around various portions of a vehicle to optimize sensing capabilities and coverage. However, some areas of a vehicle place increasing operational demands on electronic sensors, oftentimes exposing electronic sensors to harsh environmental conditions. As such, electronic sensors are typically contained within some form of protective housing, collectively referred to sometimes as an electronics package.
As the electronics industry migrates to new processes and technologies, available electronic packages are becoming smaller. While the reduction in size has advantages, such as placement of electronic sensors throughout tight spaces in a vehicle, it also introduces new concerns and precautions. Reductions in size make it more difficult to manufacture or insert an electronic sensor within a corresponding protective housing. Further, the smaller electronic packages generally have smaller contact pads which result in a reduction in connection area between an electronic sensor, such as mounted on a printed circuit board (PCB), and an interface used to electrically connect the PCB to a vehicle system. It is with respect to these and other considerations that the present improvements have been needed.


A method is disclosed wherein t-butanol is reacted with methanol in a reaction zone in one step to provide methyl tert-butyl ether and the improvement of accomplishing the reaction which comprises:. a. Using a catalyst comprising a chlorohydrol-treated, phosphated montmorillonite clay, PA0 b. continuously contacting said t-butanol and methanol in a molar amount of about 0.1 to 10 moles of methanol per mole of t-butanol with said catalyst at a temperature of about 20.degree. C. to about 250.degree. C. and a pressure of about atmospheric to about 1000 psig to obtain the methyl tert-butyl ether product.

It is well-known that there is pressure to eliminate lead compounds from fuels for reasons of public health and environmental protection. Although the specifications for reformulated gasolines set by EPA will come into force in 1995, standards were brought into force on Nov. 1, 1992 requiring gasoline contain 2.7 wt % oxygen during the winter in nonattainment areas of the U.S. If the federal air quality standard for CO has not been achieved by a specified attainment date, the minimum oxygen content will increase to 3.1%. Moreover, starting in the summer of 1992, the maximum blending Reid vapor pressure (BRvp) of all gasolines is set at 9.0 psi. Since oxygenates are not only used as gasoline blending components, extenders, octane boosters and as key ingredients for reducing the emissions of CO and VOCs (Volatile Organic Compounds), it is expected that the demand for oxygenates will increase enormously in the coming years. See F. Cunill, et al., "Effect of Water Presence on Methyl tert-Butyl Ether and Ethyl tert-Butyl Ether Liquid-Phase Synthesis". Ind. Eng. Chem. Res. 1993, 32, 564-569.
Of all oxygenates, the tertiary ethers, such as methyl t-butyl ether (MTBE), ethyl tert-butyl ether (ETBE), and tert-amyl methyl ether (TAME) are preferred by refineries to lighter alcohols. They have lower blending Ried vapor pressure (BRvp), lower vaporization latent heats and low solubilities in water. The most common ether in use today is MTBE with a production of about 25 million metric tons. However, ETBE is becoming more attractive as the price of methanol goes up in relation to gasoline. It can be produced from renewable ethanol, in contrast to methanol derived from natural gas, and its use would help mitigate the greenhouse effect, Ibid., p. 564.
In addition, ETBE outranks MTBE as an octane enhancer and its BRvp is only 4 psi, which makes it more attractive for BRvp blends less than 8 psi required in some places during the summer. Therefore, a number of U.S. states and European countries are planning to make ETBE from bioethanol, Ibid.
At the present time, TAME, which is usually produced in MTBE refinery units when C.sub.5 olefins are diverted into the feed, is not viewed as rivaling MTBE or ETBE, Ibid.
The main drawback of tertiary ethers, is that they substantially increase aldehyde emissions which are under EPA regulations and have to decrease 15% by 1995. It is believed this drawback could be largely circumvented by mixing the tertiary ethers with tertiary alcohols. Tertiary butyl alcohol (tBA) has a very low atmospheric reactivity and low aldehyde emissions, since no hydrogens are contained in the carbon link to the oxygen. Basis experience acquired with tBA during the 1970s, a gasoline blended with a mixture of ethers and tBA and/or tertiary amyl alcohol should be shippable, Ibid.
Currently all commercial processes for the manufacture of methyl tert-butyl ether are based upon the liquid-phase reaction of isobutylene and methanol (Eq. 1), catalyzed by a cationic ion-exchange resin (see, for example: Hydrocarbon Processing, October 1984, p. 63; Oil and Gas J., Jan. 1, 1979, p. 76; Chem. Economics Handbook-SRI, September 1986, p. 543-7051P). The cationic ion-exchange resins used in MTBE synthesis normally have the sulphonic acid functionality (see: J. Tejero, J. Mol. Catal., 42 (1987) 257; C. Subramamam et al., Can. J. Chem. Eng., 65 (1987) 613). ##STR1##
With the expanding use of MTBE as an acceptable gasoline additive, a growing problem is the availability of raw materials. Historically, the critical raw material is isobutylene (Oil and Gas J., Jun. 8, 1987, p. 55). It would be advantageous, therefore, to have a process to make MTBE that does not require isobutylene as a building block. It would be advantageous to have an efficient process for making MTBE by reaction of methanol with tertiary-butyl alcohol, since t-butanol (tBA) is readily available commercially through isobutane oxidation.
The preparation of methyl tert-butyl ether from methyl and tert-butyl alcohols is discussed in S. V. Rozhkov et al., Prevrashch Uglevodorodov, Kislotno-Osnovn. Geterogennykh Katal. Tezisy Dokl. Vses Konf., 1977, 150 (C. A. 92:58165y). Here the tBA and methanol undergo etherification over KU-2 strongly acidic sulfopolystyrene cation-exchangers under mild conditions. This reference contains data on basic parameters of such a process. It is also pointed out that, although a plant for etherification over cation exchangers does not present any major problems, considerations include the fact that recycling large amounts of tert-butyl alcohol and methanol, as well as isobutylene, causes the scheme to be somewhat more expensive. Also, the progress of the reaction over cation exchangers is usually complicated by various adsorption and diffusion factors, by swelling phenomena, and by the variable distribution of the components between the solution and ion-exchanger phase. Furthermore, said acidic cation-exchangers with an organic (polystyrene or polymethacrylate) backbone generally have a very limited stability range with regard to operating temperatures, with temperatures above 120.degree. C. normally leading to irreversible destruction of the resin and loss of catalytic activity.
In U. S. Pat. No. 2,282,469 to Frolich there is disclosed a process for preparing methyl tertiary-butyl ether over a catalyst comprising Kieselguhr impregnated with phosphoric acid at a temperature of about 175.degree. F. to 350.degree. F.
In U.S. Pat. No. 4,925,989 (1990), to Hagan et al., there is disclosed a process for preparing methyl tertiary-butyl ether wherein tertiary-butyl alcohol, isobutylene and methanol are continuously fed into a combination reactor distillation tower having a packed sulfonic acid resin catalyst bed where MTBE is produced.
G. B. Pat. No. 2,179,563 (1987) discloses the use of modified layered clay catalysts in reactions capable of catalysis by protons. Of particular interest in this invention were the three-layer sheet types, such as smectites, micas and vermiculites composed of successive layers of tetrahedral silica, octahedral alumina and tetrahedral silica which can exhibit swelling properties.
U.S. Pat. No. 4,590,294 (1986) discloses a process for the production of an ester comprising reacting an olefin from the group consisting of ethylene, hex-1-ene, hept-1-ene, oct-1-ene, 4-methylpent-1-ene, hex-2-ene, 1,5-hexadiene and cyclohexene with a carboxylic acid using as a catalyst component a hydrogen ion-exchanged layered clay. This reference would not seem to suggest a method for simultaneous dehydration of tert-butanol to isobutylene and the reaction with methanol to produce MTBE.
U.S. Pat. No. 4,822,921 (1989), To Texaco Chemical Co., discloses a method for preparing alkyl tertiary alkyl ethers which comprises reacting a C.sub.1 -C.sub.6 primary alcohol with a C.sub.4 -C.sub.10 tertiary alcohol over a catalyst comprising an inert support impregnated with phosphoric acid.
U.S. Pat. No. 5,099,072 (1992), to Texaco Chemical Co., discloses the reaction of t-butanol and methanol, or other C.sub.1 -C.sub.6 primary alcohols and C.sub.4 -C.sub.10 tertiary alcohols, in the presence of acidic montmorillonite clay catalysts having certain identifiable physical parameters, such as surface area, acidity range and moisture content.
In U.S. Pat. No. 5,059,725 (1991), to Texaco Chemical Co., a one-step synthesis for MTBE is disclosed wherein butanol and methanol are reacted over a catalyst comprising ammonium sulfate or sulfuric acid deposited upon a Group IV oxide. Again, other C.sub.1 -C.sub.6 alcohols and C.sub.4 -C.sub.10 tertiary alcohols will also work.
U.S. Pat. No. 5,157,162 (1992), to Texaco Chemical Co., discloses a fluorosulfonic acid-modified clay catalyst for the production of aliphatic ethers from C.sub.1 -C.sub.6 primary alcohols and C.sub.4 -C.sub.10 tertiary alcohols.
In U.S. Pat. No. 5,157,161 (1992), to Texaco Chemical Co., there is disclosed the use of a hydrogen fluoride-modified montmorillonite clay catalyst for producing alkyl-tertiary alkyl ethers.
U.S. Pat. No. 5,214,218 (1993), to Texaco Chemical Co., discloses a method for producing methyl t-butyl ether or other alkyl tertiary alkyl ethers using a catalyst comprising a montmorillonite clay treated with a haloacid.
It is known in the art to use pillared clays as catalysts in certain processes. Chem. Systems Topical Reports, Vol. II, 1986, Program, p. 61 (May 1987). Also see: European Patent Application 0083970A1 (Jul. 20, 1983) to British Petroleum.
Possible applications for pillared clays include catalytic cracking and olefin oligomerization and the reaction of alkylene oxides with alcohols. Chem. Systems, supra, p. 62.
Other reactions catalyzed by pillared clays include the hydration of olefins to alcohols and the reaction of olefins with acids to form esters. The clays can also be used in Friedel Crafts-type reactions.
There is a review of the use of pillared, cation-exchanged and acid-treated montmorillonite as catalysts for certain organic reactions by J. M. Adams et al., J. Inclusion Phenomena, 5, 663 (1987), and in Applied Clay Science, 2, 309 (1987). These clays display Bronsted and Lewis acid activities. It is noted that, while some cationic species are stable in solution over a wide concentration and pH range, others are not, particularly solutions containing aluminum. It is noted that it is difficult to ensure a reproducible Al.sup.3+ clay and moreover, since workers have used slightly different exchanging and washing procedures, a comparison between related experiments is hindered. Commercial acid-treatment is carried out using concentrated hydrochloric, sulphonic or phosphoric acids. The concentration of the acid and the time of the treatment is variable. Sometimes the excess acid is removed by washing, whereas in other products this is not the case. Therefore there is a great variety in the type and activity of acid-treated clays.
With the current interest in the production of MTBE as a blending component in high octane gasoline, the identification of catalysts which provide substantial yields and extended life is important in the art. A catalyst which provides substantial yields, permits the production of MTBE in one step and incorporates the added feature of phase separation of the product above a certain temperature should contribute substantially to the art.

One-step synthesis of methyl t-butyl ether from t-butanol using pillared, phosphated montmorillonite clay catalysts


An MR head includes two substantially identical MR elements, separated by a thin film non-magnetic spacer which is electrically conductive along at least a portion of its length. A current applied to the MR head splits into two respective substantially equal currents that flow in the same direction through the substantially identical MR elements, to provide mutual bias and to serve as sense currents for detecting change in element resistance. The MR elements are biased to operate in a magnetically unsaturated mode. This results in a "bootstrapping" of short wavelength signals that effectively amplifies the reproduced signal over a broad region of the signal spectrum when the linear spacing between the MR elements is in the range of from one half to one times the half-wavelength of signals recorded on a magnetic recording medium.

1. Field of the Invention
This invention relates to a magnetoresistive reproduce head, and in particular to a dual element magnetoresistive head.
2. Description Relative to the Prior Art
The magnetoresistive (MR) reproduce head has gained wide acceptance in the magnetic recording field since it was disclosed in U.S. Pat. No. 3,493,694, issued to Hunt in 1970. The MR head is characterized by high output and low noise, making it particularly attractive for reproducing short wavelength signals. It may be fabricated by thin film deposition techniques allowing the relatively inexpensive manufacture of multitrack heads with narrow track widths for high density recording applications. A variety of shielded and unshielded configurations using single and dual MR elements and incorporating a number of biasing techniques are known in the art.
Dual element MR heads are disclosed in U.S. Pat. No. 3,860,965 entitled "Magnetoresistive Read Head Assembly Having Matched Elements for Common Mode Rejection", issued in the name of Voegili and U.S. Pat. No. 4,878,140 entitled, "Magnetoresistive Sensor with Opposing Currents for Reading Perpendicularly Recorded Media", issued in the names of Gill et al. The heads disclosed in these patents comprise parallel MR elements separated by thin electrically insulating layers. It has long been known in the art that MR structures such as the above, whose elements are separated by thin electrically insulating spacers, are subject to shorting problems. Such shorting may be due to pin holes in the insulating spacer, or may occur in head lapping, or during head operation when the abrasive magnetic tape being reproduced can smear the soft MR element across the spacer, shorting it to adjacent conductive material. This has occurred, for example, in heads utilizing soft adjacent layer biasing where an MR element is separated by an thin electrically insulating spacer from a conductive magnetic material whose magnetic field induces the bias in the MR element. Bajorek et al, recognizing the problem in their U.S. Pat. No. 4,024,489 entitled "Magnetoresistive Sandwich including Sensor Electrically Parallel with Electrical Shunt and Magnetic Biasing Layers", teach overcoming the problem by intentionally shorting the MR sensing layer and the magnetic biasing layer by use of a very thin (220 angstrom), contiguous conductive separation layer. However, the structure disclosed by Bajorek et al, is stated to result in a 30% loss of signal from the single MR sensor for a given energy dissipation in the head because the current flowing through the conductive shunting layer provides no contribution to signal output.

Shorted dual element magnetoresistive reproduce head exhibiting high density signal amplification


A generator having at least four coils wound around each of the winding axes, these four coils being spaced out from one another to cancel at least the first derivative up to the seventh derivative of the magnetic field generated by these coils, in parallel to the winding axis, at a central point when they are powered by the same current, and the circumference of each coil is a circle, the diameter of this circle being equal within 2% of the diameter of a circle defined by the intersection between a sphere centered on the central point and a plane, perpendicular to the winding axis of this coil, passing through this coil, the sphere being the same for all the coils wound around the same winding axis.

Prior-art generators comprise at least one first coil, one second coil and one third coil wound respectively about a first, second and third winding axes, the first and second and third winding axes being mutually orthogonal and secant at a common point corresponding to the central point, the coil or coils wound around a same winding axis being laid out along this winding axis so that a plateau of intensity of the magnetic field generated by this coil or these coils occurs at a central point when this coil or these coils are crossed by a same current.
When the plateau of intensity of the magnetic fields generated along each of the three orthogonal axes occurs at a central point, it is said that the magnetic field is homogenous. More specifically, a homogenous magnetic field is a field for which at least the first derivative is zero at the level of the central point. When only the first derivative is zero, it is called a second-order homogenous field because the first non-zero derivative in the Taylor series decomposition of the magnetic field at the central point is the one corresponding to the second derivative.
Here below, a magnetic field is said to be Nth-order homogenous when the first non-zero derivative in the Taylor series decomposition of the magnetic field at the central point is the one corresponding to the (N−1)th derivative.
Here below, the term "Nth-order generator" also designates a generator of a Nth-order homogenous magnetic field.
When the generator generates a homogenous magnetic field in all three orthogonal directions at the same central point, the magnetic field is homogenous within a sphere centered on this central point.
At present, the manufacturing of these generators is complicated because they are made by coiling wires into grooves made in a sphere made of electrically insulating materials.
The prior art is also known from DE10148288A1, JP2005294537A, JP2002232182A, EP2259081A1, EP1873543A1, and EP1481637A1.
This prior art describes a layout of coils that are more simple to make but for which the magnetic field is not as homogenous as the one generated by more complex generators. Furthermore, their space requirement is generally fairly great.

Generator of a homogenous magnetic field

Commissariat a l'energie atomique et aux énergies alternatives


The present invention relates to an alphabet input system comprising: a plurality of representative keys for inputting matched first letters of the alphabet; and a combination key for generating combination letters of the alphabet that are excluded from the first letters and that are input by a combination with one of the plurality of representative keys, wherein each combination letter is pictographically derived from the shape of the first letter matched respectively to the plurality of representative keys and from a combination symbol of the combination key having a “reverse J” shape. Accordingly, the alphabet can be input more quickly and accurately by combining intuitive and consistent pictographic symbols in a miniaturised input device.

The suggestion and realization for reducing the size of an alphabet keyboard have been continuously performed. Korean Patent Publication No. 10-2001-0025429 (published on Apr. 6, 2001; METHOD FOR INPUTTING ENGLISH USING THE COMPACT KEY-PAD) suggests a compact key-pad that inputs a character key and a function key by simultaneously pressing these keys.
The type of a representative compact alphabet character input device similar to the related art and the problems thereof are described as follows.
FIG. 1 is a diagram showing an arrangement structure of an existing alphabet input device that uses a toggle type. Referring to FIG. 1, in a general input system having a 4×3 key structure, since the characters are dependently arranged irrespective of the frequency in use of the alphabets, there is an inconvenience that the input is performed up to 4 times in order to input one character dependent on each representative character.
When two characters included in the same character or the same key are successively input, since a delimiter is separately input, the typing count is up to 6 times, and thus, the typing count is wasted. Accordingly, there is a limitation in performing high-speed input in the compact device.
FIG. 2 is a diagram showing an arrangement structure of a one-to-one input type QWERTY technology. In such an input type, a compact mechanical input device having a structure in which independent keys are respectively input and physical touch is used. However, since the weight and size of a handheld device are remarkably affected by the arrangement of the input system, the portability of the handheld device is deteriorated.
A touch-type QWERTY input device in which independent keys are input on a screen display device (LCD display etc.) is used as another method. However, since the size of an input unit is reduced, there is a problem that a typographical error rate is increased, and since there is a limitation of the size capable of being minimized, such a input device is unsuitable for universally being used in all compact devices.
FIGS. 3 and 4 are diagrams showing character input arrangement structures using the combination method of the related art. In the method shown in FIGS. 3 and 4, in order to achieve the minimum typing count and the combination principle, the representative keys are arranged in consideration of the frequency of use, and thus, an input speed is partially enhanced. However, there may be a discrepancy in interpretation of a combination form between individuals.
Since there is little correlation between combinations in many cases, a user is difficult to learn the usage, and since it takes a long time to learn the usage, there is a limitation of practical values.
Even though there are various alphabet input methods, a general and ultimate compact alternative input system does not come into wide use.


This invention relates to a phytoprotein synthetic fiber and the method for the manufacture thereof. This synthetic fiber is composed of phytoprotein and polyvinyl alcohol, the phytoprotein comprising A parts of the two components, where A is equal to or greater than 5 parts and less than 23 parts, and the polyvinyl alcohol comprising B parts, where B is greater than 77 parts and equal to or less than 95 parts. The methods of manufacturing the synthetic fiber comprise a semi-finished product manufacturing process and a semi-finished product acetalization and finishing process. The sequence of processing of the semi-finished product is as follows: taking a spinning dope prepared from proportions of phytoprotein and polyvinyl alcohol, and after deaeration introducing the spinning dope to a wet-spinning frame to undergo wet-spinning; the synthetic fiber output by the spinning frame then entering a coagulant bath, the semi-finished product being obtained after air drafting, wet bath drafting, drying, dry heat drafting and heat fixing. The synthetic fibers produced as a result of the adoption of this method exhibit good breathability characteristics and require a production period of short duration, thus increasing productivity.

Apart from natural silk, textile threads composed of fibres containing protein of which there is general knowledge include a certain type of lactose composite silk which was disclosed in Japan in "Fibrous Protein Chemistry" and which was based on protein extracted from cow's milk. This protein was mixed with acrylonitrile to form a composite lactose silk. Due to the use of animal proteins as raw material in this type of composite silk this product was extremely expensive.
In order to make the best use of available resources, and in order to reduce the cost of composite silk whilst ensuring that products retain acceptable characteristics, the present inventor has already disclosed a certain type of phytoprotein composite silk and the method of its manufacture in Chinese patent 99116636.1, and this type of composite silk possessed characteristics similar to silk; the phytoprotein content of this type of composite silk was between 23-55 of the overall content. However, after further research and trial-production by the present inventor, it was discovered that there was a still greater potential for development of composite silk based on phytoprotein; the synthetic fibres thus produced exhibited even better properties than current composite silks, for instance in terms of breathability. In addition, due to the relatively long duration of the production cycle involved in the manufacturing method outlined by the above-mentioned patent, the yield was relatively low.

Phytoprotein synthetic fibre and method of manufacture thereof


A system for adding wireless on-hold capability to standard single or multi-line telephones connected to one or more phone lines. The system includes a wireless on-hold unit with transceiver associated with each telephone and each on-hold unit includes a button for each telephone line for indicating when a telephone line is to be placed into or removed from an on-hold state and a visual indicator indicating which state each telephone line is in. The system also includes a central control unit with transceiver hard wired connected between the phone lines and the telephone(s) connected to each phone line, and the central control unit places a phone line in an on-hold state or removes the on-hold state based on signals wirelessly received from the on-hold units.

There have been three main methods for adding an "on-hold" circuit to present day telephones; the first method utilizes a KSU or Key Service Unit in which the phones are specially designed to work with this main processing unit. The "on-hold" button is designed into the phones and is activated by pressing this button which in turn sends this activation data to the main KSU which performs the hold function. The KSU and phones are generally for larger business and because of the cost, maintenance and complex nature of programming are not used by the small business owner.
The second method for adding an "on-hold" circuit utilizes a locally "store-bought" single or multi-line phone with a hold button. A few problems arise when using this method since out of the complete population of single and multi-line phones that are available only a few will have a hold button. The few phones that do incorporate a hold button generally will put the customer on-hold, but will not give the ability to inject music and/or messages into the hold circuit while the customer is on-hold.
The third and final main method that is used for adding an "on-hold" circuit utilizes special after market devices that attach to either the incoming phone line or phone handset cord. Along with having to hardwire these devices most are not compatible with all standard phones without some type of tuning or special versions of the models that are available. When adding additional phones after the initial installation some systems require retuning because of the additional impedance created on the phone line. The methods used to place callers on-hold using these systems is not consistent; with some using special cumbersome buttons or large switch boxes hardwired to the phone line or phone cord. While others utilize the touch-tone keys on the phone to activate the hold circuit which is sometime an annoyance to the customer since they hear this tone before being put on-hold.
Conventional means and methods known today for adding and implementing an "on-hold" circuit are burdensome, expensive, time-consuming, and/or do not provide a reliable method, and thus are often not deployed into service. What is needed in the art is a reliable, expedient and cost effective method to adding an "on-hold" circuit to a "store-bought" single or multi-line phones.