A system and method for forming a chemically reacted layer proximate an exposed surface of a substrate is disclosed. A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target. The ion current contains at least one species of chemically reactive molecular ion, and the target is disposed in a chamber having a partial vacuum. A voltage source applies a bias to the target such that chemically reactive molecular ions from the ion source are accelerated toward the target with sufficient kinetic energy to dissociate at least some of the chemically reactive molecular ions by collision with the surface of the target.

The present invention is directed generally to novel systems and methods for performing thin film deposition or chemical treatment of substrates, and to optical devices manufactured using such systems and methods.
U.S. Pat. No. 6,402,904 (the ""904 patent) and U.S. patent application Ser. No. 09/810,688 filed Mar. 16, 2001, entitled xe2x80x9cSystem and Method for Performing Sputter Deposition Using Ion Sources, Targets and a Substrate Arranged About the Faces of a Cubexe2x80x9d (also incorporated herein by reference) (the ""688 application) disclose systems and methods for ion sputter deposition of thin films on a substrate which involve directing ions from at least one plasma ion source generally towards at least one sputter target, each target having its own associated ion source. In operation, negative voltages applied to the target(s) attract ions from the plasma and accelerate the ions toward the target to sufficient kinetic energies (50 to 5000 eV) to cause sputtering of the target. Electron sources may also be provided. For reasons of avoiding charge build-up on insulating targets, the negative voltages may be pulsed or even alternately pulsed with positive pulses which serve to attract electrons to the target to neutralize it.
The ""904 patent discloses yet another ion source directed generally at the substrate, and its main purpose is to bombard the growing film on the substrate with ion species chemically reactive with the sputter-deposited atoms from the target(s) to form compound thin films. For example O2+, N2+, H2+ and other ions collide with the growing film surface, dissociate and chemically react with the depositing atom flux sputtered from targets composed of pure Si, Al, Ti, Ta and others. In their respective combinations, compound thin films such as SiO2, Si3N4, SixH1xe2x88x92x, Al2O3, AlN, TiO2, TiN, Ta2O5, TaN and many others may be formed on the substrate. In the prior art, such an added ion source directed at the substrate enables so-called ion-assisted deposition (IAD).
IAD has many benefits. IAD supplies highly reactive O, N, H and other atomic species via surface-collisional dissociation of molecular ions, while the parent molecular species would not necessarily react (e.g., N2). This makes it easy to attain complete stoichiometry of various oxides, nitrides, hydrides and other compounds. IAD may also affect film growth by momentum-transfer physics, even with inert gas ions. IAD adds several controllable parameters to the process of thin film deposition. These are IAD ion species (and mixtures thereof), ion mass, ion kinetic energy, ion current density and ion incidence angle. Singly and in combination, variations in these parameters generally have a strong effect on film density, degree of crystalline versus amorphous character of the film, intrinsic film stress, refractive index, crystalline texture (grain orientation), crystalline grain size, grain boundary morphology, surface flatness/roughness and others. In addition, IAD may have the effect of pre-cleaning the substrate surface, removing xe2x80x9cnative oxidesxe2x80x9d, removing loosely-bound atoms, intermixing the substrate and film atoms and other effects, which collectively may improve film adhesion, environmental degradation rate, nucleation/seeding of desired thin film morphologies and other properties.
It would be desirable to retain as many benefits of IAD as possible while eliminating certain drawbacks. Many practitioners of thin film deposition art consider IAD too violent and damaging when applied to highly sensitive, damage-prone substrates. Damage-prone substrates include semiconductor laser diode emission facets, metal layers adjacent to electron tunnel-barrier in magnetic tunnel junctions, electron tunnel-barrier layers themselves, advanced transistor conduction channels when a gate dielectric is to be deposited on them, advanced transistor gate dielectrics themselves and advanced transistor gate metal contacts. Generally, the critical zones of these devices are on the order of 0.5 to 5 nm (5 to 50 xc3x85) in depth and at the deposition surface.
With respect to these devices, practitioners typically fear two aspects of IAD. These are momentum transfer effects and electric charge effects. Regarding momentum transfer damage to sensitive substrates, practitioners would prefer surface collision energies to be below xcx9c5 eV, to avoid disruption of the substrate lattice, intermixing and/or sputtering. Yet the dissociation energies of the reactive IAD ions, O2+, N2+, H2+, etc. lies between 5 and 10 eV, and the kinetic energy of the incident ions must be at least approximately equal to these values or there is not enough energy to dissociate the chemical bond. At these low energies, the dissociation fraction of these species is  less than 10%, and, in practice, to achieve reasonably high dissociation efficiencies, the collision energy must be 5 to 10 times higher. In this higher (25 eV to 100 eV per ion) kinetic energy range, it is justifiably expected that significant momentum-transfer damage may occur, either by lattice disruption, intermixing or sputtering.
Regarding electric charge damage to sensitive substrates, the arriving ions may build up a macroscopic positive charge on the surface of an insulating substrate, which can lead to dielectric breakdown with attendant local heating or lattice disruption. In addition, these typical IAD ions, including non-reactive Ar+ assist ions, induce a phenomenon called Auger neutralization microscopically at the surface at the location each ion collides with the surface. In Auger processes, the ion abstracts an electron from the atoms at the surface with the result that an amount of energy equal to the ionization potential of the ion (or the molecule which was ionized to form the ion) minus the binding energy of the electron abstracted from the surface atom must be dissipated. Most of this energy is dissipated to the surface atoms, potentially causing lattice disruption and/or local heating. Both types of electric charge damage are avoided if ions are simply not used.
A number of authors report the fact that reactive neutral atoms, radicals and molecular fragments may be produced in the gas phase (within a plasma) by various processes (electron impact excitation being the main one), and that these atoms, radicals and molecular fragments may find their way to the surface of the growing film and participate in film growth. Reactive neutrals in the plasma are either formed at low translational kinetic energy or become thermalized to low translational kinetic energy due to collisions with the background gas. Because of these same processes, all directionality of the reactive neutrals towards the substrate and the growing film is likewise absent or lost. Therefore the concept of using these reactive neutrals produced in the gas phase in place of IAD ions fails. H. F. Winters [xe2x80x9cElementary processes at solid surfaces immersed in low pressure plasmas,xe2x80x9d In: Topics in Current Chemistry, Vol. 94, p. 69, M. J. S. Dewar, et al (eds.), Berlin, Springer-Verlag, 1980] states in Sect. 220.127.116.11 (p. 106 ff) that, when a molecular ion collides with a solid surface, it is usually dissociated into its various constituent atoms and that some of these atoms (or radicals) are reflected away from the target. He further speculates that these reflected atoms may be incorporated into growing films. P. Martin et al [xe2x80x9cOptical properties and stress of ion-assisted aluminum nitride thin filmsxe2x80x9d, Applied Optics 31(31) p.6734 (1992)], plus others they cite, speculate that energetic back-reflected neutrals, including N atoms, from a sputtering target may contribute to some anomalous film stress results they obtained. The research group of K. W. Hipps [e.g., L. Huang, X.-D. Wang, K. W. Hipps, U. Mazur, R. Heffron and J. T. Dickinson, xe2x80x9cChemical etching of ion beam deposited AlN and AlN:H,xe2x80x9d Thin Solid Films 279 p.43 (1996)] deposited aluminum nitride and silicon nitride in numerous studies using single-ion-beam sputter deposition. Since room temperature thermal N2 gas does not react with either aluminum or silicon to form a nitride, it can be inferred that the main source of reactive nitrogen in their deposition apparatus was back-scattered N atoms from the target (N could also be implanted into the target and re-sputtered into the film).
It is believed that a flux of neutral reactive atoms (or radicals or molecular fragments) directed to the surface of a depositing thin film with kinetic energy of approximately 1 eV to approximately 30 eV would confer almost all the benefits of IAD and avoid most of the drawbacks of IAD. Providing a practical, efficient, cost-effective system and method for obtaining this is an object of the present invention. It is further believed to be beneficial that the flux of neutral reactive atoms traverse the distance from the atom source to the surface being treated with substantially no gas phase collisions, thus preserving the directionality and kinetic energy distribution of the atoms arriving at the surface. Obtaining this is a further object of the present invention. Finally, it is believed to be desirable that the intensity of the neutral atom flux be commensurate with industrial thin film deposition rates of approximately 0.1 to 1 nm/sec and that this flux be substantially uniform over the surface of substrates of 200 mm to 300 mm diameter. Obtaining this is a further object of the present invention.
A variety of sources for energetic, directional, reactive atoms (or radicals) appear in prior art, but none of these meet all of the objects of the present invention. M. Ross et al [M. M. Ross, R. J. Colton, S. L. Rose, J. R. Wyatt, J. J. DeCorpo and J. E. Campana, xe2x80x9cOn the development and use of fast atom beams for the SIMS analysis of polymers and insulators,xe2x80x9d J. Vac. Sci. Technol. A 2(2), p.748 (1984).] formed an energetic neutral beam by (partially) neutralizing an accelerated ion beam on a metal surface. The method of Ross et al, and others they cite, are typical of a number of techniques suitable for analytical instrumentation or fundamental research purposes, in that the atom flux is quite low and the spot size small.
Another method involving post-neutralization of an ion beam is disclosed by Albridge et al [U.S. Pat. No. 4,775,789 Oct. 4, 1988]. Here the ion beam is mass-selected with a Wien filter to isolate O+ ions from O2+ ions, as desired, then the ions are decelerated with an electrostatic lens, to the desired kinetic energy before neutralization occurs at a controlled grazing angle at a metal plate. This apparatus produced a 5 eV O atom flux of 2xc3x971015 atoms cmxe2x88x922 sxe2x88x921, which simulates O atom fluxes encountered by spacecraft in Earth orbit, and was intended for material erosion studies in such environments. The atom beam spot size was xcx9c1 mm, and scaling up appears difficult and expensive.
Kuwano [H. Kuwano, xe2x80x9cFast atom beam techniques for BN and other hard film formations and applications to friction-reducing coatings,xe2x80x9d Materials Science Forum Vols. 54 and 55 p. 399 (1990).] used a McIlraith (saddle field type) cold cathode ion source followed by a gaseous charge-exchange cell to produce xcx9c1 KeV inert gas atom beams via resonant charge exchange of the inert gas ions in an atmosphere of the same inert gas. Kuwano used two such fast atom sources, one to sputter a target and the other to take the place of an ion assist source to bombard the surface of the growing film. Such a method provides inefficient means of dissociating molecular ions into atoms, and, in the case of using a pre-selected atomic ion beam such as N+ or O+, resonant charge exchange neutralization would be difficult owing to the impracticality of producing sufficient density of neutral N or O atoms in the charge-exchange cell while keeping the overall pressure low enough to allow passage of the fast ions/atoms out the exit of the cell.
Schultz et al [M. Lu, A. Bousetta, R. Sukach, A. Bensaoula, K. Eipers-Smith, K. Waters and J. A. Schultz, xe2x80x9cThe growth of cubic boron nitride on Si(100) by neutralized nitrogen ion bombardment,xe2x80x9d Appl. Phys. Lett. 64(12) p. 1514 (1994).] have constructed a very efficient and functional reactive atom source by taking the accelerated output beam of a Kaufman ion source (dual-gridded electron-impact ionization type source), ionizing, e.g., N2 gas, and directing it through a series of open-ended cones, in which both neutralization and dissociative forward scattering occurs, leading to a gently convergent neutral atom beam of controllable kinetic energy. If a divergent beam is required, the cone angles can be changed and the substrate positioned farther away, beyond the cross-over waist of the convergent beam. Ionwerks, Inc. (http://www.ionwerks.com/nabs.htm) sells a version of this neutral atom beam source (NABS) commercially. The NABS requires large Kaufman sources that are expensive, the grids wear and become electrically shorted by sputter debris and the ion current output decreases sharply as a function of ion beam energy below 250 eV due to space charge limitations within the grids.
Kleiman et al [J. I. Kleiman, Z. A. Iskanderova, Y. I. Gudimenko and R. C. Tennyson, xe2x80x9cPotential applications of hyperthermal atomic oxygen for treatment of materials and structures,xe2x80x9d Surface and Interface Analysis 23 (1995).] describe another apparatus intended to simulate xcx9c5 eV atomic oxygen encountered in Earth orbit. This apparatus produces a beam of helium, atomic oxygen and molecular oxygen via a microwave-induced plasma in a helium-oxygen gas mixture followed by supersonic expansion. It can produce a higher O atom flux than the Albridge apparatus but is limited to the kinetic energy range practically achievable by supersonic expansion,  less than xcx9c4 eV, for O atoms. One object of the present invention is to reach at least 30 eV.
Another apparatus employing supersonic expansion is disclosed by Hinchliffe [U.S. Pat. No. 5,821,548 Oct. 13, 1998]. In this apparatus, a corona discharge of 10,000 to 30,000 volts DC is maintained in a gas between the expansion nozzle and a second electrode, while a downstream skimmer serves to isolate a portion of the expanding plasma and allow it to reach a substrate to be treated. In this system, the plasma (ions and electrons) reaches the substrate, the kinetic energy ranges of the atomic/molecular/ionic particles reaching the substrate is not specified, and the means of control thereof is not defined.
Another device intended to supply hyperthermal O atoms to simulate Earth orbit environment is disclosed by Outlaw et al [U.S. Pat. No. 5,834,768 Nov. 10, 1998 and self-cited prior art U.S. Pat. No. 4,828,817 May 9, 1989]. In this device oxygen molecules are supplied to one side of a hot metal membrane and dissociated O atoms therefrom diffuse through the metal and appear as O atoms adsorbed on the other side of the membrane. From there, a portion of the O atoms are energetically desorbed by electron-stimulated desorption (ESD) or photon-stimulated desorption (PSD) and are used to treat a substrate. However, both ESD and PSD, and the kinetic energy with which the O atom is ejected, are controlled by atomic and solid-state electronic structure and energetic effects. As such, the kinetic energy of the ejected O atoms is not continuously variable and is specific to the chemical identity of each O-metal couple. Moreover, the kinetic energies of ejection are low, i.e., a few eV at most. Also, in a high-rate, mass-production deposition apparatus, the substrate side of the metal membrane might become coated with stray coating intended for the substrate, thus potentially xe2x80x9cpoisoningxe2x80x9d the inner surface of the membrane for either surface accumulation of O atoms or their desorption, rendering the device impractical in this application.
The present invention is directed to a system and method for forming a chemically reacted layer proximate an exposed surface of a substrate. A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target. The ion current contains at least one species of chemically reactive molecular ion, and the target is disposed in a chamber having a partial vacuum in the range of 10xe2x88x922 to 10xe2x88x925 Torr. A voltage source applies a bias to the target such that chemically reactive molecular ions from the ion source are accelerated toward the target with sufficient kinetic energy to dissociate at least some of the chemically reactive molecular ions by collision with the surface of the target to form a population of neutral chemically reactive molecular fragments, atoms or radicals at least some of which scatter away from the surface of the target and into the chamber. At least a portion of the population of neutral chemically reactive molecular fragments, atoms or radicals is intercepted at an exposed surface of a substrate disposed in the chamber. The neutral chemically reactive molecular fragments, atoms or radicals intercepted by the substrate have a kinetic energy that is a function of a value of the bias. The chemically reacted layer corresponds to a product of at least one chemical reaction of the neutral chemically reactive molecular fragments, atoms or radicals intercepted by the substrate with other atoms proximate the exposed surface of the substrate. In one embodiment, the chemically reacted layer is formed without bombarding the exposed surface of the substrate with ions.
In accordance with further aspects, a controller may vary the value of the bias applied to the at least one target, and thereby vary the kinetic energy of the neutral chemically reactive molecular fragments, atoms or radicals intercepted by the substrate. In one embodiment, the controller continuously varies the value of the bias applied to the at least one target, and thereby continuously varies the kinetic energy of the neutral chemically reactive molecular fragments, atoms or radicals intercepted by the substrate over a range from 1-30 eV or higher. The controller can also optionally vary an angle of the substrate such that an arrival angle of the neutral chemically reactive molecular fragments, atoms or radicals intercepted at the exposed surface of the substrate varies from a substantially normal angle of incidence to a substantially grazing angle of incidence. An electron source may also be disposed in the chamber to provide electrons that neutralize accumulated ion-charge build-up on the target.
In accordance with a further aspect, the chemically reactive molecular ions accelerated toward the target cause atoms from the surface of the target to be sputtered away from the target, and a portion of the atoms sputtered from the surface of the target collect upon the exposed surface of the substrate with the neutral chemically reactive molecular fragments, atoms or radicals intercepted by the substrate. A thin film formed on the exposed surface of the substrate includes a chemical compound or alloy resulting from reaction of the atoms sputtered from the surface of the target with the neutral chemically reactive molecular fragments, atoms or radicals intercepted by the substrate.
In a further embodiment, first and second targets are disposed in the chamber. In this embodiment, chemically reactive molecular ions accelerated toward the first target cause atoms from the surface of the first target to be sputtered away from the first target, and chemically reactive molecular ions accelerated toward the second target cause atoms from the surface of the second target to be sputtered away from the second target. Portions of the atoms sputtered from the surfaces of the first and second targets collect upon the exposed surface of the substrate with neutral chemically reactive molecular fragments, atoms or radicals scattered from the first and second targets and intercepted by the substrate. A thin film formed on the exposed surface of the substrate includes a chemical compound or alloy resulting from reaction of the atoms sputtered from the surfaces of the first and second targets with the neutral chemically reactive molecular fragments, atoms or radicals scattered from the first and second targets and intercepted by the substrate. A controller may vary or control properties of the thin film by controlling arrival rates at the exposed surface of the substrate of the atoms sputtered from the surfaces of the first and second targets and the neutral chemically reactive molecular fragments, atoms or radicals scattered from the first and second targets.
In the two target embodiment, a first ion source may be used to generate a first divergent ion current directed predominately at the first target and a second ion source may be used to generate a second divergent ion current directed predominately at the second target. The first divergent ion current optionally includes a first species of ions that is different from a second species of ions in the second divergent ion current. For example, the first species may comprise inert gas ions while the second species comprises reactive molecular gas ions. Alternatively, the first and second species may respectively comprise first and second species of reactive molecular gas ions.
In the two target embodiment, the controller may independently control a quantity of the first species of ions directed at the first target and a quantity of the second species of ions directed at the second target. Similarly, the controller may independently control a first magnitude of flux of neutral chemically reactive molecular fragments, atoms or radicals scattered from the first target and a second magnitude of flux of neutral chemically reactive molecular fragments, atoms or radicals scattered from the second target. In some cases, a chemical composition of the thin film depends at least in part on a ratio of the first magnitude to the second magnitude. In these cases, the controller may vary the ratio over time such that the chemical composition of the thin film formed on the substrate varies within a thickness of the thin film. For example, the chemical composition of the thin film formed on the substrate can be made to vary linearly, in a sinusoidal or parabolic fashion, or as a step-function, within the thickness of the thin film.
In the two target embodiment, the first target may be biased with a different voltage amplitude than the second target, and the controller may independently vary the biases applied to the first and second targets. Also, the base material of the first target may be the same as or different from a base material of the second target, and an amount of material sputtered from the first target may be the same as or different from the amount of material sputtered from the second target.
In accordance with a further aspect applicable to single or multi-target embodiments, the bias applied to the target corresponds to a pulsed DC voltage signal (e.g., a bi-polar DC voltage pulse signal or an a-symmetric bi-polar DC voltage pulse signal), and the controller varies a flux of the neutral chemically reactive molecular fragments, atoms or radicals scattered from the surface of the target by varying a width, amplitude or frequency of negative pulses in the DC voltage pulse signal.

System and method for performing thin film deposition or chemical treatment using an energetic flux of neutral reactive molecular fragments, atoms or radicals


Apparatus and methods are disclosed, including an apparatus having a first transistor configured to be coupled to a first bit line, and a control circuit configured to supply a gate of the first transistor with a first voltage to turn on the first transistor, and to supply the gate of the first transistor with a second voltage higher than the first voltage to strengthen a current drive capability of the first transistor.

Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic devices. There are many different types of memory, including volatile and non-volatile memory.
Volatile memory requires power to maintain its data, and includes random-access memory (RAM), static random-access memory (SRAM), dynamic random-access memory (DRAM), or synchronous dynamic random-access memory (SDRAM), among others.
Non-volatile memory can retain stored data when not powered, and includes flash memory, read-only memory (ROM), electrically erasable programmable ROM (EEPROM), erasable programmable ROM (EPROM), resistance variable memory, such as phase change random-access memory (PCRAM), resistive random-access memory (RRAM), or magnetoresistive random-access memory (MRAM), among others.
Each type is advantageous in specific settings. For example, DRAM, typically comprising one transistor and one capacitor per bit, is structurally very simple in contrast to other memory types (SRAM, etc.), and as such, is widely used in applications requiring low cost or high capacity. In contrast, SRAM, typically comprising four to six transistors per bit, is faster than DRAM, and is used in applications where speed is a greater concern than cost. However, it can still be advantageous to increase the speed of DRAM operation, such as by using a precharge circuit.
FIG. 3 illustrates a prior art precharge circuit 300 including a first transistor 334 to selectively couple data-line pairs (DL_T, DL_B), and second and third transistors 336, 338 to selectively couple the data-line pairs (DL_T, DL_B) to a bit-line voltage reference (VBLR) (e.g., VARY/2). The precharge circuit 300 further includes fourth and fifth transistors 340, 342 configured to receive a precharge command signal (PRE1) and to provide a precharge voltage (PRE_B) to the first, second, and third transistors 334, 336, 338.
FIG. 4 illustrates prior art operational signals 400 of the precharge circuit 300 of FIG. 3. When PRE1 is high, PRE_B is low, and vice versa, between an overdrive voltage (VOD) and a deactivation voltage (VKK) (e.g., a word-line non-select or deactivation voltage), respectively. The VOD is a voltage above a supply voltage (VARY), commonly used to amplify bit lines during sense operations, and to control the first transistor 334 (an NMOS, precharge transistor). However, if a voltage greater than the gate oxide withstand voltage is applied to a gate of a transistor, the gate oxide of the transistor can breakdown and fail.
When the fourth transistor 340 (a PMOS transistor) coupled to VOD turns on to increase a level of a control signal to the first, second, and third transistors 334, 336, 338, a voltage difference between a gate and a source of the first transistor 334 (an NMOS, precharge transistor) becomes approximately VOD (e.g., the gate of the third transistor 338 is VOD, and the source of the third transistor 338 is DL_B (e.g., VSS, 0V)). If the VOD approaches or exceeds the gate oxide withstand voltage, even if only for a short period of time, the gate insulating film of the first transistor 334 can be destroyed. Accordingly, to protect the transistors of the precharge circuit 300, the VOD must not approach or exceed a gate oxide withstand voltage (e.g., 1.5V) of the transistors.

This patent is subject to a terminal disclaimer.


A system is provided for selectively applying a coating to portions of an article having at least one area that is not be coated. The system comprises a jig, with a platform for supporting article. The jig also has a bar that is moveable with respect to the platform and at least one masking element that is coupled to the bar and is configured to cover the at least one surface of the article that is not to be coated. The jig also has a first connection mechanism that defines a first mating element. The system also comprises at least one carrier that comprises a base and at least one second connection mechanism that defines a second mating element. The second mating element is mateable with the first mating element such that the jig is releasably coupled to the carrier upon mating the first and second mating elements.

Traditional methods and systems for forming a cushioning article, such as a shoe midsole or sole portion, include the use of fluid filled bags, such as airbags. In some circumstances, it may be desirable to apply a coating, such as a spray paint, to only selected portions of the airbags, leaving other selected areas uncoated.

Manufacturing system for coating an article


An acoustic apparatus comprises a plurality of resonators having different resonance frequencies, each of which is constituted by a closed cavity and acoustic mass for causing the cavity to acoustically communicate with an external region. A housing enclosing the plurality cavities is integrally formed. Resonance acoustic radiation portions of the resonators are arranged adjacent to each other on one side of the housing, whereby sound sources which correspond to the acoustic mass can be concentrated.

1. Field of the Invention
The present invention relates to an acoustic apparatus for generating an acoustic wave obtained by synthesizing resonant acoustic waves radiated from a plurality of resonators having different resonance frequencies.
2. Description of the Prior Art
As a conventional acoustic apparatus of this type, a speaker system with a port disclosed in U.S. Pat. No. 4,549,631 is known. FIG. 12 shows an arrangement when the speaker system in U.S. Pat. No. 4,549,631 is put into a practical application. In the speaker system shown in FIG. 12, an internal space of a cabinet 1 having a known rectangular section is partitioned into two chambers 1a and 1b by a partition plate 2. Opening ports 3a and 3b are disposed on the outer walls of the chambers 1a and 1b, respectively, so that the chamber 1a and the opening port 3a and the chamber 1b and the opening port 3b form two Helmholtz resonators. In these Helmholtz resonators, resonance frequencies defined by the air springs in the chambers 1a and 1b as closed cavities and air masses of sound paths 4a and 4b of the opening ports 3a and 3b as acoustic mass means are respectively set to be f.sub.1 and f.sub.2 (f.sub.1 <f.sub.2). An opening 2a is formed in the partition plate 2, and a vibrator (dynamic speaker unit) 5 is mounted in this opening 2a. A diaphragm 6 of the vibrator 5 is mounted to close the opening 2a. The front surface of the diaphragm 6 opposes the chamber 1a, and its rear surface opposes the chamber 1b.
Since this speaker system drIves the resonators by the front and rear surfaces, the directions of resonance radiation from the two resonators are opposite to each other. For this reason, in a system arrangement, acoustic radiation spaces for the two, i.e., front and rear surfaces must be taken into consideration, and this speaker system has no single-sidedness as in normal speaker system. Although directivity is approximate to a nondirectional characteristic in a bass range, a user experiences sounds produced from two different positions at a normal audible distance. As a result, a sound source position becomes unclear, i.e., a sound image is dispersed.
Note that in a speaker system shown in FIG. 1 of U.S. Pat. No. 4,549,631, since opening ports are disposed on a single surface of a cabinet, the first problem, i.e., no single-sidedness in the system arrangement can be solved. However, since the opening ports are disposed to be horizontally or vertically separate from each other with respect to the vibrator 5, the second problem, i.e., dispersion of a sound image is left unsolved. A similar speaker system is also shown in the European Patent Publication (A1) No. 0125625.

Acoustic apparatus with plural resonators having different resonance frequencies


A hearing aid having a receiver connected to a microphone, the receiver having a one hole, a second hole, a first tubular canal and a second tubular canal, provided in such a way that acoustic signals produced in the receiver are transmitted by the first tubular canal from one hole into the ear canal of the hearing aid wearer. The second tubular canal has a first end and a second end, with the first end directly connected to the outside world when the hearing aid is in use and the second end is directly connected to the second hole in the receiver, for allowing communication from the first end to the second end. The dimensions or shape of one or both tubular canals can be chosen such that reflections of acoustic signals can be avoided.

This invention concerns the hearing aid in the preamble to Patent claim 1.
Hearing aids are used to equalize or compensate for hearing problems in a patient by processing acoustic signals picked up with a microphone that go through a receiver in the patient""s ear canal and are amplified or changed. An acoustic outlet hole is provided on the hearing aid through which the acoustic signals produced by the receiver are fed into the auditory canal.
It has long been known that the acoustic outlet hole is often reduced in size or even stopped up completely with deposits, so-called earwax. Moreover, these deposits spread out further into the inside of the hearing aid, and get into the inside of the receiver or the hole. The result of this is that the transmission properties of the hearing aid change. In addition, irreparable damage often occurs to the individual components of the hearing aid, and especially to the receiver itself.
A hearing aid is known from EP-0 377 074-A2 that has a receiver with two holes, where a first tubular canal leads from a hole in the receiver into the patient""s ear canal and a second tubular canal from the second hole in the receiver to the side of the hearing aid pointing to the outsidexe2x80x94the so-called face plate. The inside of the hearing aid has a chamber connecting the two holes, which is bounded on one side by a moving membrane, and the membrane can be deflected by a regulating unit to produce acoustic signals. Besides the chamber mentioned, there are two other chambers and holes in the housing of the hearing aid, through which a pressure difference produced by changes in height can be equalized between the ear canal and the atmosphere on the hearing aid. Such pressure-equalization devices are also called xe2x80x9cpressure ventxe2x80x9d devices.
According to the known theory, deposits that have settled over time, especially in the receiver or in the canal to the ear canal of the hearing-aid wearer, can be removed from the receiver and thus from the hearing aid by opening the hole in the face plate, which is closed during operation and by pushing a cleaning agent through the second canal, the receiver and finally the first canal with a spray or the like. In this way, all deposits can be flushed out. After the cleaning process, the hole in the face plate is closed again so thatxe2x80x94according to the known publicationxe2x80x94no unacceptable changes in transmission function can occur.
The problem of the invention is to specify a hearing aid that has a much simpler design compared to the known hearing aids, but is no in any way inferior to the known hearing aids in terms of function.
This problem is solved by the measures given in the characterizing part of Patent Claim 1. Advantageous variations of the invention are given in the other claims.
The invention has the following advantages: because a receiver with two-holes is used in the hearing aid, one hole of which is connected via a canal to the ear canal of the hearing-aid wearer and the other hole via another canal to the outside world, the hearing aid can be cleaned in the simplest way, for example by blowing it out. At the same time, the canals also serve as a pressure vent, with no unacceptable change in the characteristic transmission function. The hearing aid in the invention also has the advantage that choosing the dimensions of the other canal can improve the transmission properties of the first canal in terms of conduction adjustment to avoid reflections.
The invention will be explained in greater detail below using the drawings as examples.


The present disclosure relates to a system for monitoring a solenoid operated valve including at least one coil and at least one spool. The system compares a normalized current signature and a normalized current signature comparator to determine a spool fault condition.

Many fluid power systems, such as hydraulic systems, include valves to regulate fluid flow. There are various type of valves used for various purposes such as direction control, pressure control, on/off flow control, and proportional flow control. Valves are used in different machines used in various industrial and mobile applications including injection molding machines, high pressure processing machines, lathe machines and mobile machines. The number of valves used in a given machine can vary greatly.
Some fluid power systems include spool valves, where the regulating member is one or more lands of a spool that moves within a flow passage. In some systems, the regulating member is driven by a solenoid linear actuator. It is not uncommon for a single system to include up to 50 or more valves.
In example systems, the multiple values are connected in series or parallel combinations. Failure of even a single valve can prevent the entire system from working. Failure of the values can occur due to valve blockage related to spool faults resulting in issues such as lack of pressure or lack of intended cylinder displacement. Two common types of spool faults arise from the spool being stuck completely and does not move, or the spool having reduced or restricted movement. Some common causes for spool faults are contamination of the fluid or wear of parts.
Failure of a valve can lead to many problems that require time and money to repair. Failures of valves due to spool faults may be avoided if the spool faults can be detected and localized. Traditional monitoring methods include monitoring peaks and valleys of the current of a solenoid valve, recording a time corresponding to each of the peaks and valleys, comparing the current signature with a historical profile of the solenoid valve current, and using additional sensors for sensing spool position. Other methods include using coil inductance and resistance equivalent to coil current and comparing operating voltages with a preset threshold. However, noise in the current of a solenoid valve due to variations in operating conditions such as voltage, temperature, the integrity of the solenoid coil, and flow and pressure variations of the liquid make using traditional monitoring methods difficult or inaccurate.

System and method for spool fault detection of solenoid valves using electrical signature

DANFOSS POWER SOLUTIONS II TECHNOLOGY A/S


A combustion method utilizing a pulverized coal combustion burner which is provided with a pulverized coal nozzle for jetting a fluid mixture of pulverized coal and air and an air nozzle for jetting air. In the method, a combustion flame formed by the pulverized coal combustion burner forms a first zone of a gas phase air ratio of one or less at a radially central portion of the flame and a second zone of a gas phase air ratio of more than one outside of the first zone adjacent the coal nozzle, and a third zone of a gas phase air ratio of one or less at a downstream side from said first and second zones.

The present invention relates to a pulverized coal combustion burner and a combustion method utilizing such a burner and, more particularly, to a combustion method using a pulverized coal combustion burner which pneumatically transfers and burns pulverized coal.
Hitherto, in this kind of pulverized coal combustion burners, occurrence of NOx during combustion is a large problem. Particularly, coal has a larger content of nitrogen, compared with gaseous fuel and liquid fuel. Therefore, it is more difficult to decrease NOx produced by combustion of pulverized coals than in the case of combustion of gaseous fuel or liquid fuel.
NOx produced by combustion of pulverized coal is almost all NOx that is produced by oxidizing nitrogen contained in coal, that is, so-called fuel NOx. In order to decrease the fuel NOx, various burner structures and combustion methods have been studied.
As one of the burning methods, there is a method of forming a low oxygen concentration zone within a flame and utilizing reducing reaction of NOx which becomes active when the oxygen concentration is low. For example, JP A 1-305206, JP A 3-211304, JP A 9-170714, JP A 3-110308, disclose methods of producing flame (reducing flame) of low oxygen concentration atmosphere and completely burning coal, and a structure having a fuel nozzle for pneumatically transferring coal at the center thereof and an air injecting nozzle arranged outside the fuel nozzle. In these methods, a low oxygen concentration zone is formed inside the flame, reducing reactions of NOx are progressed in the reducing flame zone, and an amount of NOx occurred within flame is suppressed.
Further, JP A 3-211304, JP A 9-170714 and JP A 3-110308 disclose formation of recirculating flows at a downstream side of the tip of a pulverized coal nozzle by providing a flame stabilizing ring or obstacle at the tip of the pulverized coal nozzle. That is, since a high temperature gas stays inside the recirculating flows, ignition of pulverized coals progresses and the stability of flame can be raised.
In general, since the ignitability of coal is not better than other fuel, it is difficult to raise the ignitability of the coal even if the above-mentioned various methods are adopted. Therefore, in combustion of coal, consumption of oxygen does not progress and a reducing zone is hard to be formed. In order to form a reducing zone, it is necessary to suppress mixing of fuel and air jetted from an air nozzle in the vicinity of the pulverized coal nozzle. The the mixing with fuel is suppressed by supplying the air to be supplied from the air nozzle in a swirling flow. However, when strong swirling is imparted to air, mixing of the air and fuel does not progress even at a downstream portion (more than three times as large as the diameter of a burner throat) separated from the burner due to centrifugal force, and it is hard to effect complete combustion. Therefore, in this kind of pulverized coal combustion, there is the problem that NOx occurs and unburned carbons are left in combustion ashes of pulverized coal.

Pulverized coal combustion burner and combustion method thereby


The present invention provides a gas purification system with improved efficiency, simpler construction, cost reduction, form factor improvements, and increased durability. The present invention provides cost and form factor improvements through fewer components overall and through utilizing multiple integrated components. Prior art gas purification system are more bulky and complicated. The present invention achieves increased thermal efficiency through utilization of a regenerative heat exchanger to recapture a portion of the heat energy transferred to the gas during the purification process. Prior art purifiers lacked a regenerative heat exchanger. The present invention integrates the two components into one integrated heater and purification vessel assembly. The present invention integrates the two discrete components into one integrated hydrogen sorption and particle filter assembly. The integrated hydrogen sorption and particle filter assembly is also capable of operating at higher temperatures. This cases maintenance and manufacture. The resulting gas purification system is simpler through utilizing fewer components, smaller by utilizing fewer and integrated components, and reduced cost through fewer components, smaller components and through reduced manufacture labor requirements.

The invention relates generally to gas purification systems for the purification of noble gases and nitrogen. In particular, the method of purification consists of heating an impure gas, contacting the impure gas with an impurity sorption material to produce a purified gas, cooling the purified gas to a temperature less than about 100xc2x0 C., and contacting the purified gas with a hydrogen sorption material to remove residual hydrogen. The system contains an improved, low temperature hydrogen sorption and filter apparatus for substantially removing all residual hydrogen and particles from the purified gas.
In the semiconductor manufacturing industry, pure gases are used in a variety of manufacturing processes, such as chemical vapor deposition (CVD), plasma etch, etc. The purity of the gas used in the manufacturing process becomes more critical as the feature width of integrated circuits decreases. For example, more than a decade ago feature widths in the range of 3 to 5 microns were standard. Currently, integrated circuits having feature widths of less than 0.2 microns are in production. With smaller feature widths, even a very low level of contaminants can damage an integrated circuit, thereby destroying its functionality or degrading its performance. Typical contemporary process specifications require process gases to have less than 10 parts per billion (ppb) of contaninants, and preferably less than 1 ppb of contaminants.
One prior art gas purifier utilizes hot getter materials for the removal of impurities from noble gases and nitrogen. The getter materials are encased in stainless steel containers which are typically heated to a temperature in the range of 300xc2x0 to 450xc2x0 C. Unfortunately, stainless steel outgases a significant amount of hydrogen at temperatures above approximately 200xc2x0 C. In the past when process specifications allowed 100 ppb of hydrogen in a purified process gas this was not a major problem. However, with contemporary process specifications, the hydrogen outgassed from hot stainless steel surfaces has become a significant problem.
A second vessel containing a hydrogen sorption material is typically used to remove the residual hydrogen. Briesacher et al. U.S. Pat. No. 5,238,469, issued Aug. 24, 1993 (Briesacher) discloses a typical vessel containing a hydrogen sorption material. This vessel contains a material which will sorb hydrogen from the gas flow. A separate vessel of hydrogen sorption material adds size, complexity and cost to the gas purification systems.
In addition to purification of impure gas, the gas must also be filtered to remove particles. Particles as small as 0.003 micron must be removed from the gas flow. To remove particles, dedicated particle filters are added to the outlet sections of the gas purification systems. The material utilized for the filter element is typically Teflon, but other more expensive materials such as steel may be used.
Particle filters are very precise and expensive components of the gas purification systems. In addition to cost, particle filters also add complexity and physical size to the gas purification systems. Teflon filters are temperature sensitive and cannot be operated in environments above approximately 100xc2x0 C. Teflon filters can be damaged or destroyed if operated above 100xc2x0 C. Teflon filters may also be contaminated with moisture or water vapor. A damaged, destroyed or contaminated filter must be replaced.
What is needed is a gas purification system which reduces the complexity, cost and physical size for equivalent purification and particle filtration performance.
The present invention fulfills the needs over the prior art. The present invention provides a gas purification system with improved efficiency, simpler construction, cost reductions, form factor improvements, and increased durability.
The present invention provides cost and form factor improvements through fewer components overall and through utilizing multiple integrated components. Prior art gas purification systems are more bulky and complicated.
The present invention achieves increased thermal efficiency through utilization of a regenerative heat exchanger to recapture a portion of the heat energy transferred to the gas during the purification process. Prior art purifiers lacked a regenerative heat exchanger.
Prior art gas purification systems utilized discrete heater and purification chambers where the present invention integrates the two components into one integrated heater and purification vessel assembly.
Prior art gas purification systems also utilized discrete residual hydrogen sorption and particle filtering components. The present invention integrates the two discrete components into one integrated hydrogen sorption and particle filter assembly. The integrated hydrogen sorption and particle filter assembly is also capable of operating at higher temperatures. This eases maintenance and manufacture.
The resulting gas purification system is simpler through utilizing fewer components, smaller by utilizing fewer and integrated components, and reduced cost through fewer components, smaller components and through reduced manufacturing labor requirements.

Gas purification system with an integrated hydrogen sorption and filter assembly


A combination guitar having a full acoustical hollow body with the standard neck, head and strings supported between tuners on the head to a bridge on the top panel of the guitar's acoustical body with a solid electric guitar body structurally attached to the side wall of the acoustical hollow body with a second neck, head and strings supported over electronic pick up devices to transmit to the amplifier with volume and balance control mechanisms for the electric portion of the guitar to balance with an acoustical pick up inside the hollow body for transmission to the amplifier.

This invention relates to a single device having the capabilities of both an acoustical and electric guitar.
Many musical compositions are written to include sections played on both an acoustical and on an electric guitar. In some instances, the parts switch back and forth between the two instruments. This poses no great problem when the musical composition is being played in a studio. The parts can be played independently, even separated by days, and then dubbed together simulating a continuous flow of music from one guitar to the other guitar. The problem arises when the musical composition having been recorded is now popular and the performer wishes to include that musical composition in a combination presentation. The common practice is to play the piece either on the acoustical guitar or on the electric guitar and not attempt to switch between instruments. This makes for a generally unsatisfactory combination performance as the musical composition is played and sounds much different from the recording and from the way the composer intended.
The prior art includes combination electric guitars and a number of combination instruments but those devices do not satisfy the need described above and do not attain the objects described herein below.

Acoustic and electric combination guitar


The invention relates to a method of generating a two-level pattern for lithographic processing by multiple beamlets. In the method, first a pattern in vector format is provided. The vector format pattern is then converted into a pattern in pixmap format. Finally, a two-level pattern is formed by application of error diffusion on the pixmap format pattern.

1. Field of the Invention
The present invention relates to a method of generating a two-level pattern for lithographic processing by multiple beamlets. The invention further relates to a computer readable medium for performing, when executed by a processor, such a method. The invention further relates to a pattern generator arranged for performing such a method. The invention further relates to a charged particle multi-beamlet system for exposing a target using a plurality of beamlets, in which the system comprises such a pattern generator. Finally, the invention relates to a lithographic system comprising such a pattern generator.
2. Description of the Related Art
Systems using a black and white writing strategy, i.e. an "on" and "off" writing strategy, are widely known in the art. They may use, for example, laser beams or charged particle beams, and may feature the use of direct writing in maskless systems. By modulating the beam (or beams in multi-beam systems), individual grid cells in a rasterized virtual grid may be exposed or not exposed to write the desired pattern on to the target. Such beams are characterized by a so-called beam effect in the target surface, which is often described by a point spread function. The point spread function generally has a Gaussian distribution, which describes the extent of the surface area affected by a beam. The beam size is generally defined as the size of the distribution in which 50% of the beam energy is present.
Generally, the spot area of the beam at the surface area is much larger than the typical size of the grid cells. A full exposure of a certain grid cell thus also causes an exposure with less intensity in the grid cells adjacent to the exposed cell. So, in case of a charged particle beam, the number of charged particles deposited within an individual grid cell, also referred to as dose, constitutes of the sum of the dose received directly from exposure of the grid cell itself and indirectly from exposure of adjacent cells. By selecting a suitable cut-off level for development of the resist layer being exposed, desired feature dimensions can be obtained.
A particular kind of charged particle beam based lithographic system is known from U.S. Pat. No. 6,897,458, assigned to the present owner of the invention, and involves a massive plurality of charged particle beamlets generated in a charged particle beam column for exposing a target. The charged particle beamlets are scanned over the target while being modulated. Additionally, the target may be capable of moving relative to the beams, for example in a direction transverse to the scanning direction of the beams. The modulation of the beamlets is performed on the basis of pattern data provided to the lithographic system. In the particular system described, the modulation is performed by blanking or blocking beamlets to effectively switch the beamlets on and off.
Exposing a target using this type of lithography system is achieved by the combination of relative movement of the target and modulation (e.g. timed "on" and "off" switching or blanking) of each charged particle beamlet. A known method to expose a substrate with beamlets is a raster scan method. In order to control the beamlets in such a scanning method, the pattern data is rasterized. The target is positioned on a motor driven stage that is moved in a continuous motion. As the stage is moved, the beam is scanned in a direction substantially perpendicular to the stage motion. By supplying the rasterized pattern data to the system, timed so that the beamlets are modulated in synchronism with the beamlet deflection and stage motion, the pattern represented by the pattern data can be transposed as an exposure pattern onto the surface of the target. The rasterized pattern data corresponds to an exposure pattern on a virtual raster cell grid on the surface of the target.
Existing charged particle beam technology is suitable for lithography systems for relatively course patterning of images, for example to achieve critical dimensions (CDs) of 90 nm and higher. However, a growing need exists for improved performance. It is desired to achieve considerably smaller critical dimensions, for example 22 nm, while maintaining sufficient wafer throughput, e.g. from 10 to 60 wafers per hour or higher.
In a conventionally rasterized pattern as discussed above feature placement is limited to the grid lines of the raster cell grid. However, due to for example correction rules needed to correct for several resolution-disturbing phenomena like the proximity effect, edges of a feature often do not necessarily fall on a grid line. For this reason, a tendency exists to choose the raster cell grid as small as possible.
However, in particular in charged particle beam systems using a plurality of beamlets, a grid size as large as possible is desired in view of data processing constraints. International application WO2007/105939, assigned to the present owner of the invention, addresses the issue of choosing a suitable grid size by introducing the use of "ragged" edges to enable placement of feature edges between grid lines.
A further difficulty of patterning with a plurality of beamlets is dose variation between different beamlets. In a charged particle system, the current per beamlet generally varies. In multibeam systems, different parts of a substrate to be patterned are exposed by different beamlets. As a result of beamlet dose variation, patterning errors may occur. A writing strategy as presented in WO2007/105939 is unable to resolve this issue.

Method of generating a two-level pattern for lithographic processing and pattern generator using the same


A system includes: a shift mechanism; and a position detecting device detecting an operating position of the shift mechanism on the basis of an output signal of a sensor attached to the shift mechanism. An execution mode of a driving force limiting process that limits driving force is set on the basis of the operating position that is detected by the position detecting device. The driving force limiting process is executed on the basis of the execution mode of the driving force limiting process and a vehicle operation state. When it is determined that there is an abnormality in the position detecting device in a state that the driving force limiting process is not executed, setting the execution mode on the basis of the operating position of the shift mechanism is prohibited, and execution of the driving force limiting process is allowed on the basis of the vehicle operation state.

1. Field of the Invention
The invention relates to a driving control system for a vehicle.
2. Description of Related Art
A prime mover, such as an internal combustion engine and an electric motor, is mounted on a vehicle, such as an automobile, as a driving source. In addition, the vehicle includes a shift mechanism that is shifted through driver's operation into a driving position (for example, a position at which the vehicle travels forward or a position at which the vehicle travels backward) or a non-driving position (for example, a parking position or a neutral position). Then, when the shift mechanism is operated to the driving position, driving force is transmitted from the prime mover to wheels. On the other hand, when the shift mechanism is operated to the non-driving position, transmission of driving force from the prime mover to the wheels is interrupted.
There is suggested, in a vehicle in which driving force is transmitted from a prime mover to wheels, an execution mode of driving force limiting process for reducing driving force that is output from the prime mover is set on the basis of an operating position of a shift mechanism and then the driving force limiting process is executed on the basis of an operation state of the vehicle.
Japanese Patent Application Publication No. 2010-18174 (JP 2010-18174 A) describes a system that executes driving force limiting process when a shift mechanism is operated from a non-driving position to a driving position in a state where an accelerator operation member is operated. In this system, even when the shift mechanism is operated from the non-driving position to the driving position in a state where the power of the prime mover is increased as a result of operation of the accelerator operation member, driving force that is transmitted from the prime mover to wheels is suppressed to a small driving force. Therefore, a feeling of strangeness experienced by a driver as a result of transmission of driving force is suppressed, and a decrease in drivability is suppressed.
Usually, when the operating position of the shift mechanism is detected, the operating position of the shift mechanism is detected on the basis of an output signal of a shift position sensor attached to the shift mechanism. Therefore, if there is an abnormality in a position detecting device that detects the operating position of the shift mechanism, such as an abnormality in the shift position sensor and an abnormality in a device that processes the output signal of the shift position sensor, it is not possible to properly detect the operating position. In the above-described system, if there is an abnormality in the position detecting device, it is not possible to appropriately reduce driving force through the driving force limiting process, so drivability decreases.


Process for the preparation of 5-(1-piperazinyl)benzofuran-2-carboxamide in which, as intermediate step, 5-bromosalicylaldehyde or one of its derivatives is reacted in a transition metal-catalysed amination with R2-piperazine, in which R2 is as defined in claim 1.

The invention relates to a process for the preparation of 5-(1-piperazinyl)benzofuran-2-carboxamide, characterized in that
a) 5-bromosalicylaldehyde is reacted in a one-pot reaction firstly with a compound of the formula I
Lxe2x80x94CH2xe2x80x94COOR1xe2x80x83xe2x80x83I
in which
L is Cl, Br, I or a reactively esterified OH group, and
R1 is alkyl having 1-6 carbon atoms or benzyl,
and subsequently with formamide to give 5-L-benzofuran-2-carboxamide (II), in which L is Cl, Br, I or a reactively esterified OH group,
(II) is then reacted in a transition metal-catalysed amination with R2-piperazine, in which R2 is H or an amino protecting group, to give the compound of the formula III
xe2x80x83in which R2 is H or an amino protecting group,
and subsequently, if R2xe2x89xa0H, R2 is cleaved off, or
b) a compound of the formula IV
xe2x80x83in which
L is Cl, Br, I or a reactively esterified OH group,
R3 is H or CH2R6,
R4 and R5 are each, independently of one another, OR7, OR8, SR7 or SR8,
R4 and R5 together are alternatively carbonyl, xe2x95x90S, xe2x95x90Nxe2x80x94C(R7)2, xe2x95x90Nxe2x80x94C(R8)2, xe2x95x90Nxe2x80x94OH, xe2x95x90Nxe2x80x94OR7, xe2x95x90Nxe2x80x94N[(R7)2], xe2x95x90Nxe2x80x94N[(R8)2] or xe2x80x94Oxe2x80x94(CH2)nxe2x80x94Oxe2x80x94,
R6 is CN, COOH, COOR7 or CONH2,
R7 is alkyl having 1-6 carbon atoms,
R8 is phenyl which is unsubstituted or mono- or disubstituted by R7, OR7, SR7 or Hal,
n is 2 or 3,
is reacted in a transition metal-catalysed amination with R2-piperazine, in which R2 is H or an amino protecting group,
to give a compound of the formula V
xe2x80x83in which
R2 is H or an amino protecting group,
R3 is H or CH2R6,
R4 and R5 are each, independently of one another, OR7, OR8, SR7 or SR8,
R4 and R5 together are alternatively carbonyl, xe2x95x90S, xe2x95x90Nxe2x80x94C(R7)2, xe2x95x90Nxe2x80x94C(R8)2, xe2x95x90Nxe2x80x94OH, xe2x95x90Nxe2x80x94OR7, xe2x95x90Nxe2x80x94N[(R7)2], xe2x95x90Nxe2x80x94N[(R8)2] or xe2x80x94Oxe2x80x94(CH2)nxe2x80x94Oxe2x80x94,
R6 is CN, COOH, COOR7 or CONH2,
R7 is alkyl having 1-6 carbon atoms,
R8 is phenyl which is unsubstituted or mono- or disubstituted by R7, OR7, SR7 or Hal,
n is 2 or 3,
which is subsequently reacted in a one-pot reaction firstly with a compound of the formula I
Lxe2x80x94CH2xe2x80x94COOR1xe2x80x83xe2x80x83I
in which
L is Cl, Br, I or a reactively esterified OH group, and
R1 is alkyl having 1-6 carbon atoms or benzyl,
and subsequently with formamide to give a compound of the formula III
xe2x80x83in which R2 is H or an amino protecting group,
and subsequently, if R2xe2x89xa0H, R2 is cleaved off, or
c) a compound of the formula V
in which
R2 is an amino protecting group,
R3 is H or CH2R6,
R4 and R5 are each, independently of one another, OR7, OR8, SR7 or SR8,
R4 and R5 together are alternatively carbonyl, xe2x95x90S, xe2x95x90Nxe2x80x94C(R7)2, xe2x95x90Nxe2x80x94C(R8)2, xe2x95x90Nxe2x80x94OH, xe2x95x90Nxe2x80x94OR7, xe2x95x90Nxe2x80x94N[(R7)2], xe2x95x90Nxe2x80x94N[(R8)2] or xe2x80x94Oxe2x80x94(CH2)nxe2x80x94Oxe2x80x94,
R6 is CN, COOH, COOR7 or CONH2,
R7 is alkyl having 1-6 carbon atoms,
R8 is phenyl which is unsubstituted or mono- or disubstituted by R7, OR7, SR7 or Hal,
n is 2 or 3,
is reacted with chloroacetamide to give a compound of the formula III
in which R2 is an amino protecting group,
and R2 is subsequently cleaved off,
and/or in that 5-(1-piperazinyl)benzofuran-2-carboxamide is converted into one of its acid-addition salts by treatment with an acid.
The invention also relates to the compounds of the formula V
in which
R2 is H or an amino protecting group,
R3 is H or CH2R6,
R4 and R5 are each, independently of one another, OR7, OR8, SR7 or SR8,
R4 and R5 together are alternatively carbonyl, xe2x95x90S, xe2x95x90Nxe2x80x94C(R7)2, xe2x95x90Nxe2x80x94C(R8)2, xe2x95x90Nxe2x80x94OH, xe2x95x90Nxe2x80x94OR7, xe2x95x90Nxe2x80x94N[(R7)2], xe2x95x90Nxe2x80x94N[(R8)2] or xe2x80x94Oxe2x80x94(CH2)nxe2x80x94Oxe2x80x94,
R6 is CN, COOH, COOR7 or CONH2,
R7 is alkyl having 1-6 carbon atoms,
R8 is phenyl which is unsubstituted or mono- or disubstituted by R7, OR7, SR7 or Hal,
n is 2 or 3,
and salts and solvates thereof.
5-(1-piperazinyl)benzofuran-2-carboxamide is an important intermediate for pharmaceutical active ingredients. This is described, for example, in DE 19730989, WO 9857953, EP 738722, EP 736525, DE 4414113, DE 4333254 or DE 4101686.
Benzofuran derivatives as precursors are also described, for example, in DE 19514567.
Processes are known for the preparation of heterocyclic aromatic amines or arylamines, for example from EP 0 802 173, in which a transition-metal catalyst is used.
General amination reactions are described in a review article by J. F. Martinez in Angew, Ch. Int. 37, 2046-2062. Other processes for the preparation of tertiary arylamines using a catalyst composed of a trialkylphosphine and palladium are disclosed in JP 10-310561 (Kokai application), Appl. No. 9-119477 or JP 11-80346 (Kokai application), Appl. No. 9-245218.
A process for the preparation of arylamines with transition-metal catalysis has been described by S. L. Buchwald et al. in U.S. Pat. No. 5,576,460. Another process for the preparation of aromatic amines from chlorinated aromatic compounds in the presence of a palladium catalyst is described in EP 0 846 676, by J. F. Hartwig et al. in J. Org. Chem. 1999, pp. 5575-5580, or S. L. Buchwald et al. in J.A.C.S. 1999, 121, 9550-9561.
In Tetrahedron Letters 39 (1998) 617-620, M. Nishiyama describes the synthesis of N-arylpiperazines from aryl halides and piperazine with transition-metal catalysis.
Surprisingly, studies in the course of the synthesis of medicaments which are described, for example, in DE 43 33 254 (EP 0 648 767) have shown that 5-(1-piperazinyl)benzofuran-2-carboxamide can be obtained in at least comparable or higher overall yield compared with the prior art, crucial advantages which may be mentioned here being the fact that the reaction is simple to carry out and product isolation is consequently simple.
Another consequence of this is the low solvent and energy consumption.
If L in the compounds of the formulae I, II or IV is a reactively esterified OH group, this is preferably alkylsulfonyloxy having 1-6 carbon atoms (preferably methylsulfonyloxy or trifluoromethylsulfonyloxy), arylsulfonyloxy having 6-10 carbon atoms (preferably phenyl- or p-tolylsulfonyloxy, furthermore also 2-napthalenesulfonyloxy) or alternatively fluorosulfonyloxy.
R1 is alkyl or benzyl. Alkyl here has 1, 2, 3, 4, 5 or 6 carbon atoms, preferably 1, 2, 3 or 4 carbon atoms, particularly preferably, for example, methyl or ethyl, furthermore propyl, isopropyl, furthermore also butyl, isobutyl, sec-butyl or tert-butyl.
In the compounds of the formula I, L is preferably Cl, furthermore also Br.
R2 is H or an amino protecting group. R2 is particularly preferably an amino protecting group.
The term xe2x80x9camino protecting groupxe2x80x9d is known in general terms and refers to groups which are suitable for protecting (blocking) an amino group against chemical reactions, but which are easy to remove after the desired chemical reaction has been carried out elsewhere in the molecule. Typical such groups are, in particular, unsubstituted acyl, aryl, aralkoxymethyl or aralkyl groups. Since the amino protecting groups are removed after the desired reaction (or reaction sequence), their type and size are furthermore not crucial; however, preference is given to those having 1-20, in particular 1-8, carbon atoms. The term xe2x80x9cacyl groupxe2x80x9d in connection with the present process and the present compounds should be understood in the broadest sense. It covers acyl groups derived from aliphatic, araliphatic, aromatic or heterocyclic carboxylic acids or sulfonic acids and, in particular, alkoxycarbonyl, aryloxycarbonyl and especially aralkoxycarbonyl groups. Examples of acyl groups of this type are alkanoyl, such as acetyl, propionyl, butyryl; aralkanoyl, such as phenylacetyl; aroyl, such as, benzoyl or tolyl; aryloxyalkanoyl, such as phenoxyacetyl; alkoxycarbonyl, such as methoxycarbonyl, ethoxycarbonyl, 2,2,2-trichloroethoxycarbonyl, BOC (tert-butoxycarbonyl), 2-iodoethoxycarbonyl; aralkyloxycarbonyl, such as CBZ (carbobenzoxycarbonyl), also referred to as xe2x80x9cZxe2x80x9d), 4-methoxybenzyloxycarbonyl, FMOC (9-fluorenylmethoxycarbonyl); arylsulfonyl, such as Mtr (4-methoxy-2,3,6-trimethylphenylsulfonyl).
R2 is very particularly preferably benzyl or BOC.
An amino protecting group can be removed from a compound of the formula IIIxe2x80x94depending on the protecting group usedxe2x80x94using, for example, strong acids, advantageously using TFA (trifluoroacetic acid) or perchloric acid, but also using other strong inorganic acids, such as hydrochloric acid or sulfuric acid, strong organic carboxylic acids, such as trichloroacetic acid, or sulfonic acids, such as benzene- or p-toluenesulfonic acid. The presence of an additional inert solvent is possible, but is not always necessary. Suitable inert solvents are preferably organic solvents, for example carboxylic acids, such as acetic acid, ethers, such as tetrahydrofuran or dioxane, amides, such as dimethylformamide, halogenated hydrocarbons, such as dichloromethane, furthermore also alcohols, such as methanol, ethanol or isopropanol, and water. Also suitable are mixtures of the above-mentioned solvents. TFA is preferably used in excess without addition of a further solvent, and perchloric acid is preferably used in the form of a mixture of acetic acid and 70% perchloric acid in the ratio 9:1. The reaction temperatures are advantageously between about 0 and about 50xc2x0, preferably between 15 and 30xc2x0. The BOC group is preferably cleaved off using TFA in dichloromethane or using approximately 3 to 5N hydrochloric acid in dioxane at 15-30xc2x0.
Protecting groups which can be removed hydrogenolytically (for example CBZ or benzyl) can be cleaved off, for example, by treatment with hydrogen in the presence of a catalyst (for example a noble-metal catalyst, such as palladium, advantageously on a support, such as carbon). Suitable solvents here are those mentioned above, in particular, for example, alcohols, such as methanol or ethanol, or amides, such as DMF. The hydrogenolysis is generally carried out at temperatures between about 0 and 100xc2x0 and pressures between about 1 and 200 bar, preferably at 20-30xc2x0 and 1-10 bar.
R3 is preferably H.
R3 R4 and R5 are preferably methoxy, ethoxy, propoxy or phenoxy.
R4 and R5 are in particular together carbonyl.
In the compounds of the formula IV, Hal is preferably Br.
The compounds of the formula IV and V can also be in dimeric form which can be cleaved back to the corresponding salicylaldehydes, in which L and R2 have the meanings indicated:
R7 is alkyl. Alkyl here has 1, 2, 3, 4, 5 or 6 carbon atoms, preferably 1, 2, 3 or 4 carbon atoms, particular preference being given, for example, to methyl or ethyl, furthermore propyl, isopropyl, furthermore also butyl, isobutyl, sec-butyl or tert-butyl.
In the compounds of the formulae IV and V,
xe2x95x90Nxe2x80x94C(R7)2 is preferably xe2x95x90Nxe2x80x94C(CH3)2,
xe2x95x90Nxe2x80x94C(R8)2 is preferably xe2x95x90Nxe2x80x94C(phenyl)2,
xe2x95x90Nxe2x80x94OR7 is preferably xe2x95x90Nxe2x80x94OCH3,
xe2x95x90Nxe2x80x94N[(R7)2] is preferably xe2x95x90Nxe2x80x94N[(CH3)2],
xe2x95x90Nxe2x80x94N[(R8)2] is preferably xe2x95x90Nxe2x80x94N[(phenyl)2].
The compounds of the formulae I and IV are either known or are otherwise prepared by methods known per se, as described in the literature (for example in the standard works, such as Houben-Weyl, Methoden der organischen Chemie [Methods of Organic Chemistry], Georg-Thieme Verlag, Stuttgart), to be precise under reaction conditions which are known and suitable for said reactions. Use can also be made here of variants which are known per se, but are not mentioned here in greater detail.
Process Variant a)
The reaction of 5-bromosalicylaldehyde with a compound of the formula I and subsequently with formamide is carried out as a one-pot reaction in a suitable inert solvent with addition of a base.
Examples of suitable inert solvents are hydrocarbons, such as hexane, petroleum ether, benzene, toluene or xylene; chlorinated hydrocarbons, such as trichloroethylene, 1,2-dichloroethane, tetrachloromethane, chloroform or dichloromethane, ethers, such as diethyl ether, diisopropyl ether, tetrahydrofuran (THF) or dioxane; glycol ethers, such as ethylene glycol monomethyl or monoethyl ether, ethylene glycol dimethyl ether (diglyme); ketones, such as acetone or butanone; nitriles, such as acetonitrile; sulfoxides, such as dimethyl sulfoxide (DMSO); carbon disulfide; nitro compounds, such as nitromethane or nitrobenzene; optionally also mixtures of said solvents with one another.
The reaction time, depending on the conditions used, is between a few minutes and 14 days, and the reaction temperature is between about 0xc2x0 and 150xc2x0, preferably between 60xc2x0 and 120xc2x0.
The reaction time is very particularly preferably between 4 and 20 hours and the temperature between 90 and 115xc2x0.
Suitable bases are compounds such as, for example, Na, K or Cs carbonate.
A one-pot reaction is subsequently carried out with formamide, preferably in the presence of an organic base, preferably an alkali metal alkoxide, such as, for example, Na tert-butoxide, and its corresponding alcohol, to give 5-Hal-benzofuran-2-carboxamide (II). In (II), Hal is preferably Br.
The reaction is preferably carried out at from 0 to 60xc2x0.
Other processes to give (II) are described, for example, in Bull. Soc. Chim. Fr., 1971; 4329, and by O. Dann et al. in Justus Liebigs Ann. Chem. 1975; 160-194. The one-pot reaction described above proceeds in better yield than said reactions.
The reaction of (II) with R2-piperazine to give the compound of the formula III is carried out in a suitable inert solvent, a base and in the presence of a transition-metal catalyst.
Transition metals which can be employed include PdCl2 or Pd(OAc)2 or other Pd2+ derivatives, which are pre-reduced, for example using NaBH4 or phosphines (the step can be omitted in the case of an excess of ligand R3P) or Pd(0) species, such as, for example, Pd(DBA)2 or Pd2(DBA)3 (DBA=dibenzylideneacetone)
To this range of Pd complexes can be added corresponding ligand complexes of nickel or copper.
Furthermore, ligands which can be employed are N,N-diarylimidazolium salts analogously to J. Huang et al., Org. Lett. 1, 1999, 1307-1309.
The phosphine or aza/phosphine ligands employed include
tris-ortho-tolylphosphine
tricyclohexylphosphine
1-(2-diphenylphosphino-1-naphthyl)isoquinoline (QUINAP)
1,8-bis(dimethylamino)naphthalene
Phe2Pxe2x80x94CH2xe2x80x94PPhe2
in particular also P(tert-butyl)3=P(t-Bu)3
1,1xe2x80x2-bis(diphenylphosphano)ferrocene (DPPF as complex DPPFxPdCl2)
2,2xe2x80x2-bis(diphenylphosphino)-1,1xe2x80x2-binaphthyl (=BINAP)
(S)-dibutphos=1-(2-di-tert-butylphosphanylphenyl)ethyldimethylamine
1-(N,N-dimethylamino)-1xe2x80x2-(dicyclohexylphosphino)biphenyl
1-(di-t-butylphosphino)biphenyl
1,1xe2x80x2-bis(di-t-butylphosphino)biphenyl
(t-Bu)2Pxe2x80x94(CH2)nxe2x80x94P(t-Bu)2 n=1,2,3
(t-Bu)2Pxe2x80x94(CH2)mxe2x80x94Xxe2x80x94(CH2)nxe2x80x94P(t-Bu)2 m,n=1, 2, 3; X=O, . . .
or alternatively
DBtPF=1,1xe2x80x2-bis(di-tert-butylphosphino)ferrocene.
Examples of suitable solvents are hydrocarbons, such as benzene, toluene, xylene; chlorinated hydrocarbons, such as, for example, dichloromethane; ketones, such as acetone, butanone; ethers, such as tetrahydrofuran (THF) or dioxane; nitriles, such as acetonitrile, optionally also mixtures of these solvents with one another.
The reaction time, depending on the conditions used, is between a few minutes and 14 days, and the reaction temperature is between 0xc2x0 and 180xc2x0, normally between 30xc2x0 and 130xc2x0.
Examples of suitable bases are alkali metal alkoxides, such as, for example, Na tert-butoxide.
Process Variant b)
The reaction of compounds of the formula IV with R2-piperazine is carried out under conditions as described under variant a).
R4 and R5 are optionally converted into a carbonyl group. The subsequent one-pot reaction of the compound of the formula V with the compound of the formula I and subsequently with formamide is likewise carried out under conditions as described above. The elimination of R2, if R2xe2x89xa0H, is also carried out under the conditions described.
A base of the formula I or of the formula V can be converted into the associated acid-addition salt by means of an acid, for example by reaction of equivalent amounts of the base and the acid in an inert solvent, such as ethanol, followed by evaporation. Particularly suitable acids for this reaction are those which give physiologically acceptable salts. Thus, it is possible to use inorganic acids, for example sulfuric acid, nitric acid, hydrohalic acids, such as hydrochloric acid or hydrobromic acid, phosphoric acids, such as orthophosphoric acid, sulfamic acid, furthermore organic acids, in particular aliphatic, alicyclic, araliphatic, aromatic or heterocyclic monobasic or polybasic carboxylic, sulfonic or sulfuric acids, for example formic acid, acetic acid, propionic acid, pivalic acid, diethylacetic acid, malonic acid, succinic acid, pimelic acid, fumaric acid, maleic acid, lactic acid, tartaric acid, malic acid, citric acid, gluconic acid, ascorbic acid, nicotinic acid, isonicotinic acid, methane- or ethanesulfonic acid, ethanedisulfonic acid, 2-hydroxyethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, naphthalenemono- and -disulfonic acids, laurylsulfuric acids. Salts with physiologically unacceptable acids, for example picrates, can be used for the isolation and/or purification of the compounds of the formula I.
Above and below, all temperatures are given in xc2x0 C. In the examples below, xe2x80x9cconventional work-upxe2x80x9d means that water is added if necessary, the pH is adjusted to between 2 and 10 if necessary, depending on the constitution of the end product, the product is extracted with ethyl acetate or dichloromethane, the phases are separated, the organic phase is dried over sodium sulfate and evaporated, and the product is purified by chromatography on silica gel and/or by crystallization.

Method for producing 5-(1-piperazinyl)-benzofuran-2-carboxamide by transition metal-catalyzed amination


A control indication assembly. A first control mounted on a surface of a computer is coupled to a first sensor, to a first sensing circuit to send an electrical signal to the first control when a user-touch occurs to the first sensor, and to a first indicator to indicate an occurrence of said user-touch. A second control mounted on a surface of a display which is coupled to the computer is coupled to a second sensor, to a second sensing circuit to send an electrical signal to said second control when said user-touch occurs to the display, and to a second indicator to indicate an occurrence of the user-touch. The first and second control are configured such that the first and second indicator are synchronized to exhibit identical behaviors when the user-touch occurs to either the first control or the second control.

The present invention relates to a computer system with control indicators.
A personal computer system may be thought of as a general-purpose, single-user microcomputer that is designed to be operated by a person. A small and low cost personal computer (PC) may include a monitor display connected to a computer, each of which may receive power from an ordinary outlet. In operation, the monitor accepts video signals from a graphics card within the computer over a cable assembly and displays this information on a screen.
A personal computer system typically employs an electromechanical control, such as a power button, to turn on and off the computer system. The monitor display connected to the computer also employs a similar electromechanical control to turn on and off the display. These controls typically work separately and independently from each other. Each of these controls may also include an indicator (e.g., a light emitting diode (LED)) which emits light when the corresponding control is activated, and these indicators typically work separately and independently of each other. For example, when the power button on the display is activated, the display's LED emits light regardless of the state of the power button of the computer. Although in some case, the color of the light from the display's LED depends on whether the computer is supplying display data to the display (e.g., the computer is off or is in a low power (e.g. "sleep") mode).
A personal computer system is often set up such that the power input into the display is controlled by the computer's power. For instance, when a user turns on or turns off the computer by pressing the power button on the computer tower, the display may also be likewise turned on or off without the user having to press the power button on the display. Nonetheless, currently the display may not be configured to control the power input to the computer system.

Methods and apparatuses using control indicators for data processing systems


In some embodiments, a method determines a combination of sub-bitstream chunks from a plurality of sub-bitstreams for a video. The combination of sub-bitstream chunks includes a quality measurement. The method exchanges a sub-bitstream chunk in the combination of sub-bitstream chunks with another sub-bitstream chunk from another sub-bitstream in the plurality of sub-bitstreams based on a relationship of a change in bitrate to a change in quality due to the exchanging. The method continues to exchange a sub-bitstream chunk in the combination of sub-bitstream chunks with another sub-bitstream chunk until the quality measurement of the combination of sub-bitstream chunks meets a target quality and outputs the combination of sub-bitstream chunks.

Media programs, including audio-video data, are increasingly distributed over telecommunications networks for the viewing and enjoyment of users. Services provide media programs to users through various video delivery technologies (e.g., streaming). For example, the service may allow a user to view the latest television shows or movies using a media player. After a television show airs, the service may experience a high demand for the television show. In one example, a media program provider provides the television show to the service. The service then needs to transcode the television show before the service can make the television show available to the users. For example, the television show may need to be transcoded into different bitrates. Due to the popularity of the video, the service would like to transcode the media program as fast as possible. However, if the transcoding is performed by one transcoder, the service must wait until the transcoder finishes transcoding the entire television show before making the television show available to users. A typical runtime for transcoding a two-hour 1080p video is about 48 hours using H.264 transcoder. Also, if a higher video resolution video, such as a 4K resolution or even higher, and a more complicated transcoding technique such as High Efficiency Video Coding (HEVC)/H.265 or VP9 is used, the transcoding time of new video content will dramatically increase.
In addition to transcoding a video quickly, a service wants to provide the highest quality video possible. A video may be composed of sequential camera shots, which may contain diverse video characteristics. From a video coding standpoint, one way to encode the camera shots is to apply different coding parameters to each different camera shot based on the characteristics of each camera shot. This results in the best compression results of having the highest quality with the lowest bitrate. However, due to the complexity of reconfiguring the transcoder for each camera shot, this method is not used. Rather, a transcoder typically encodes the entire video based on the same transcoding parameters. This results in a transcoding that may not achieve the highest possible quality.


An apparatus for coiling a continuously arriving wire has a main support rotatable about an axis and having mounting formations and a head carried on the support and having mounting formations engaging the support mounting formations. A guide tube is fixed on the head and has an intake end aligned with the axis and closely juxtaposed with the main support and an outlet end axially spaced from the intake end and opening tangentially offset from the axis. A releasable fastener engaged between the support and the head presses the head mounting formations against the support mounting formations.

Wire or rod (hereinafter termed "wire" only) is formed at high speed in a rolling or drawing mill and is delivered in straight condition to a coiler that forms it into a succession of large-diameter turns that it deposits on a surface, normally a conveyor of some type. Thence the coiled wire is moved through subsequent treatment steps such as heat treatment, descaling, pickling, or simply cooling. It is critical that the wire be deposited in uniformly shaped and spaced coils so that the subsequent treatment stage is effective.
The typical coiling system comprises a guide tube twisted in three dimensions and having an upstream end opening axially in line with an axis about which the tube is rotated and a downstream end which opens at a location radially offset from the axis and directed generally tangentially. The straight wire is fed into the upstream end of the guide tube as it is rotated about its axis so that as the wire passes through the tube it is bent into an arcuate shape and will fall in a coil when leaving the downstream end of the tube.
In U.S. Pat. No. 5,312,065 issued May 17, 1994 to Shore et al such a device is shown that basically comprises a rotor head or body carrying the spiral guide tube and that is secured via a flange to a basic support that is rotated about the axis and to whose center the incoming wire is fed. The tube extends freely upstream along the axis from the rotor body to a position with its upstream end aligned axially with the outlet of the infeed tube.
Since such a system is subject to considerable wear, as a steel wire is being pulled through the guide tube and simultaneously deformed, it is necessary to periodically service and/or replace the head structure. This is an onerous job entailing considerable down time while the rotor body is disconnected, and the way the guide tube is mounted leaves it open to damage as the rotor body is moved.


In predictive natural disaster response, a server determines an affected location predicted to be affected by a natural disaster and determines whether the type of natural disaster requires relocation of an animal population at the affected location. When relocation is required, using machine learning models, the server generates a rehabilitation needs prediction for the relocation, determines an optimal location for the relocation from candidate locations, and generates a relocation plan to relocate the animal population from the affected location to the optimal location. When relocation is not required, using the machine learning models, the server generates a demands prediction for products and services at the affected location, generates a supply prediction for the products and the services at the affect location, and generates a supply plan using the demands and supply predictions.

When a natural disaster is predicted to strike a location, response planning is typically focused on the needs of the human population, which includes the consumption of animal products. However, typical natural disaster response planning fails or inadequately considers the interrelationship between the human and animal populations in the biological ecosystem. This can result in the shortage of supplies and/or extended lead times in providing adequate food, services, and other essential supplies to the human population.

Technology for predictive natural disaster response

International Business Machines Corporation


An extensible table with its unextended tabletop formed by leaves that are slidably fixed on the supporting frame of the table. The sliding leaves are moved away from each other to reveal a hidden extension leaf that is raised by momentarily applying an initiating downward force. The extension leaf raises itself to the same level as the sliding leaves are to form an extended tabletop. The extension leaf is moved down to its original level by an applied downward force and allows for the sliding leaves to be slid toward each other to form the unextended tabletop. Latching is accomplished by a latching pin. The first end of the latching pin is in a pin housing. This allows the second end of the latching pin to move in the groove of the grooved block. A spring in the pin housing holds the second end of the pin in the grove.

This patent application claims priority of Malaysian Patent Application PI 20013344 entitled xe2x80x9cExtensible Tablexe2x80x9d that was filed on 13 Jul. 2001, the disclosure of which is incorporated by reference in its entirety herein.
1. Field of the Invention
This invention relates to an extensible table that has sliding leaves, an extension leaf and a mechanism for the extension leaf to be raised and lowered vertically after the sliding leaves are moved away from each other to reveal the extension leaf.
2. Description of the Related Art
Among the many extensible tables available, some employ sliding movement to extend the tabletop. An example of an extensible table with slidable leaves is demonstrated in U.S. Pat. No. 4,297,952. This table has two leaves that can be slid away from each other for a separate third leaf to be placed in the middle of the table to form a extended tabletop. The third leaf however is detachably fixed to the table and can be easily lost. U.S. Pat. No. 4,077,335 shows a tabletop extended to twice its original length by fully sliding out two leaves from a stacked position to a side-by-side position. U.S. Pat. No. 4,718,354 shows a tabletop that is made of a flexible covering sheet with both ends being passed underneath its working plane. The flexible covering sheet is attached to a rigid panel that forms the working plane. When the table is to be extended, the ends of the table are pulled away from each other along the length of the table.
An extensible table that is extended by sliding two sliding leaves away from each other to reveal the extension leaf. The extension leaf is raised to the same level as the sliding leaves by applying an initial downward force. When the initial force is removed, the table rises by means of a raising mechanism. It is lowered by applying downward force to move the extension leaf back to its original lower level.
All the leaves are advantageously supported on a supporting frame which in turn is supported by vertical supporting members each with one end attached to the supporting frame and the other atop a horizontal floor plane. The mechanism for raising and lowering the extension leaf advantageously includes spring-loaded shafts loaded with spring and a latching means. The shafts are advantageously, attached to the supporting frame and the bottom of the extension leaf and provide the support needed and the upward force for raising the extension leaf. The latching means advantageously includes a latching pin which has one end housed in a pin housing. The pin housing is advantageously attached to the bottom of the extension leaf. The other end of the latching pin is advantageously always in the groove of a grooved block located opposite the pin housing and attached to the supporting frame. This may be achieved by having a spring in the pin housing to provide the force to hold the other end of the latching pin in the groove. The pin is advantageously bent into shape and snugly fitted in a cylindrical hollow of the pin housing. In this manner, the end of the latching pin in the said groove may advantageously move freely in the groove with respect to the end of the pin in the pin housing. The groove advantageously has a closed loop groove track with sections of varying depth. These sections may each have a constant groove depth that is different from that of the other sections or may each have varying groove depth as one traces along the entire groove. Such varying depths enable the pin, thus the extension table, to be latched at different levels as the pin moves cyclically in a given direction, clockwise or counter-clockwise.
The details of one or more embodiments of the invention are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will be apparent from the description and drawings, and from the claims.


A vehicle has a bed and a tailgate openably and closably formed at the rear end of the vehicle. The exterior of the bed is surrounded by side panels. Elongated support members are provided on the inner wall of the side panel. A cover member which covers the bed is placed on the support members. The cover member has lock means for fixing the cover member to the bed. The lock means comprises a first fixation member which fixes the cover member to the bed in a disengageable manner, and a second fixation member which fixes the tailgate to the cover member in a disengageable manner.

1. Field of the Invention
The present invention relates to a bed covering apparatus that is for use for a vehicle including a bed provided at the rear of the vehicle and having an open upper portion and a tailgate openably and closably provided at the bed, and includes a cover member which covers the bed and is detachably provided on the bed.
2. Description of the Related Art
Japanese Unexamined Patent Publication No. 64-56281 discloses a conventional cover for covering a bed of a pickup truck with side walls, a front end and a rear end. The cover comprises a plurality of cover panels, a rear cover panel which extends across the side walls for covering a truck bed area adjacent to the rear end of the truck bed, and a second cover panel for covering the area of the rear end. The rear panel has a forwardly projecting channel-shaped hinge portion. A rearwardly projecting hinge portion of the second panel and the forwardly projecting hinge portion of the rear panel are so interlocked as to provide a hinged connection between those panels. A fixation mechanism for each panel to detachably and selectively fix the cover panels to the side walls of the truck bed is provided. Accordingly, when one of the cover panels is fixed to a predetermined position over the bed of the truck, the other panels can pivot around the hinged connection and be opened to expose the bed area of the truck below the other covers. The cover further comprises a fixation mechanism which fixes the panels to the side walls of the truck.
The conventional cover is for the pickup truck with the fixation mechanism provided on the rear end thereof. To prevent theft, the cover is closed before placements of the cover panels, and closes the bed as the cover panels are fixed by engagement of the fixation mechanisms of the individual cover panels with the side walls. Accordingly, for a pickup truck which does not have a fixation mechanism at the rear end thereof, the rear end is not fixed by just fixing the cover panels, so that it is difficult to take measures for theft.
The invention has been made in view of the above-described circumstance, and it is an object of the invention to provide a bed covering apparatus which locks the bed of a truck even if the truck does not have fixation means.