A package having fluid-filled chambers that form a line of contact that seals the package. The package generally defines an interior cavity accessible through an opening. Opposing portions of the opening may include at least one fluid-filled chamber to seal the package. The chamber may be held in sealing contact with an opposing structure or with each other by fastening means that hold the opposing portions together. In another embodiment, opposing chambers themselves may interlock to maintain sealed contact. The package may include an auxiliary opening so that an end user can fill the package with articles of the user's choice. The auxiliary opening can be sealed at least over a portion of its length. In another embodiment, first and second compartments are isolated by the fluid-filled chamber seal, with the seal being selectively breachable to enable transfer of product from the first to the second compartment.

Conventional flexible packages generally include external or integrated sliding means or other similar devices designed to allow a user to selectively gain access into the pouch or package. Traditionally, non-integrated, twist ties and other tying means have also been used to close an open-end portion of a flexible package. These devices often require the manufacturing of additional and often costly materials and/or devices into the packages.
Due to the problems associated with external closure devices for packages, the industry has developed integrated closeable devices. U.S. Pat. Nos. 4,913,561, 5,692,837, and 6,186,663 disclose such packaging. Current typical reclosable devices, most commonly known as zippers, tend to be pre-made at separate manufacturing sites and then shipped to the site where the actual package is manufactured. The reclosable device is then introduced into the packaging machinery and typically heat sealed into or onto the package. These reclosable devices usually are comprised of two pieces that have been mated together by male and female interlocking members. The mating process is usually performed by either pinching the two interlocking members together (press-to-close mechanism) or sliding a mechanism (zipper mechanism) along the top of the reclosable device, which causes the two interlocking members to be interlocked.
These press-to-close closure mechanisms are sometimes difficult to align when attempting to mate together, often causing a failure of a true closure. Furthermore, when a packager is filling the package through the press-to-close closure mechanism, and when the consumer is pouring the contents out of the package, small pieces of the product can get caught in tracks of the mating interlocking members, causing a breach across the interlocking components and hampering any positive seal. The compromise of the integrity of the seal between the mating locking components may also be caused by localized crushing (e.g., proximate side seal) of the interlocking members during manufacturing, shipping, handling, and use by the consumer. The localized crushing need only be enough to plastically deform either of the interlocking members to cause a leak.
Further, most zipper-type closure mechanisms merely serve to close off the top portion of the package by pulling or forcing together the top portions of the front and back panels of the package. This zipper-type closure mechanism has two significant drawbacks. First, it reduces the internal holding volume of the package since, in a closed position, side gussets of the package are forced to contact at an end proximate the access opening. Second, a space or gap can remain when the zipper-type closure mechanism is in its closed position. The gap permits air to flow in and out of the package. Although the zipper-type closures may be easier for some consumers to operate, and may have a more positive closure with respect to the press-to-close closure mechanism, they can be expensive and, like the press to close closure mechanisms, often do not create an ideal barrier after the package has been opened by the consumer for the first time.
Some designs of the zipper and press-to-close mechanisms are suitable for maintaining a water or liquid tight seal. However, the interlocking members of both the zipper and the press-to-close closure mechanisms may also allow for fluid leakage and they may undergo plastic deformation after repeated use that adversely affects the ability of the mechanism to seal fluids. Moreover, the zipper and press-to-close mechanisms may not be suitable for a gas tight seal. Accordingly, the contents of the package are susceptible to oxidation and other air-borne problems, such as the release of odors.
As a result, there is a need for a flexible package that substantially solves the above-referenced problems with conventional package designs, configurations, and manufacturing methods.

This patent is subject to a terminal disclaimer.


An analog switch comprises first and second FET switches connected in series between input and output terminals through a first interconnection point, a third FET switch connected between the first interconnection point and one of power terminals, fourth and fifth FET switches connected in series between input and output terminals through a second interconnection point and a sixth FET switch connected between the second interconnection point and the other of the power terminals, whereby the first, second and sixth FET switches are simultaneously turns on or off in a manner that their operating conditions are kept in phase opposite to the third, fourth and fifth FET switches.

1. Field of the Invention
The present invention relates to an analog switch circuit and, more particularly, to an analog switch circuit composed of a CMOS structure and being free from malfunction by external noise signal.
2. Related Art
A typical conventional analog switch circuit that is formed on a monolithic integrated circuit to be used in a multiplexer or the like employs a CMOS structure with a view to widening the input voltage range of analog signals.
FIG. 1 shows one example in which a conventional analog switch circuit is applied to a multiplexer.
This circuit has analog switch circuits 10.sub.A to 10.sub.M each comprising a pair of P- and N-type transistors Q.sub.11 and Q.sub.12 which are parallel-connected between the corresponding one of the input terminals T.sub.A to T.sub.M and an output terminal T.sub.O and which are respectively supplied at their gate electrodes with the corresponding one of the control signals .phi..sub.A to .phi..sub.M from a decoder 2 and an inverted signal formed by respective inverters 3.sub.A to 3.sub.M so that the analog switch circuits 10.sub.A to 10.sub.M turn on/off.
FIG. 2 shows a sectional structure of respective analog switch circuits 10.sub.A to 10.sub.M. An N.sup.31 -type well region 12 is provided in a P.sup.- -type semiconductor substrate 11. A P-type transistor Q.sub.11 is formed in the well region 12 with P-type source and drain regions 13A and 14A and a gate electrode 16A, while an N-type transistor Q.sub.12 is provided directly in the semiconductor substrate 11 with N-type source and drain regions 13B and 14B and a gate electrode 16B. The semiconductor substrate 11 is grounded through a substrate grounding electrode through a substrate grounding region 17, while the well region 12 is connected to a power supply potential (V.sub.DD) terminal through the well-potential supplying region 15.
The above-described conventional analog switch circuits 10.sub.A to 10.sub.M are each comprised of a pair of P- and N-type transistors Q.sub.11 and Q.sub.12. The N-type transistor Q.sub.12 of each of the analog switch circuits 10.sub.A to 10.sub.M is formed directly in the P.sup.- -type semiconductor substrate 11 supplied with a grounding potential, while the P-type transistor Q.sub.11 is formed in a well region 12 provided in the semiconductor substrate 11 and supplied with a power supply potential V.sub.DD. Therefore, the conventional structure has the disadvantage that, if a noise or the like of a voltage which is out of the range defined by the power supply potential V.sub.DD and the ground potential is input to any of the input terminals T.sub.A to T.sub.M, a current flows between the one of input terminals T.sub.A to T.sub.M and the power supply potential V.sub.DD terminal through the P-type source region 13A-the well region 12-the well potential supplying region 15 or the ground potential terminal through the N-type source region 13B-the substrate 11-the substrate grounding region 17. This current flow changes the channel potential of the transistor Q.sub.11 or Q.sub.12 so that the noise or the like is transmitted to the output terminal T.sub.O, thus causing an adverse effect on the output signal OUT.
More specifically, it is assumed that a negative overvoltage is applied as a noise to the input terminal T.sub.A in the case where the control signal .phi..sub.A is at a high level and the transistors Q.sub.11 and Q.sub.12 of the analog switch circuit 10.sub.A are in an off-state and therefore the input terminal T.sub.A and the output terminal T.sub.O are not in electrical connection with each other, while another control signal .phi..sub.B is at a low level and the transistors Q'.sub.11 and Q'.sub.12 of the analog switch 10.sub.B are in an on-state and therefore the input terminal T.sub.B and the output terminal T.sub.O are in electrical connection with each other.
In such a case, if the negative overvoltage is applied to the source region 13.sub.A through the input terminal T.sub.A, since the gate electrode 16.sub.A is at a high level, the transistor Q.sub.11 is not turned on. However, if the negative overvoltage is applied to the source region 13.sub.B, a forward-biased diode is formed between the P.sup.- -type semiconductor substrate 11 and the N.sup.+ -type source region 13.sub.B, so that the applied negative overvoltage causes a current to flow between the ground potential terminal and the input terminal T.sub.A through the substrate grounding electrode 17. Further, the transistor Q.sub.12 which is turned off in the case where the gate electrode 16.sub.B is at a low level, that is, a level substantially equal to the ground potential, and the gate-to-source voltage V.sub.GS of the transistor Q.sub.12 is lower than the threshold voltage V.sub.TH is turned on since the source region 13.sub.B is at a negative potential and hence the gate-to-source voltage V.sub.GS is higher than the threshold voltage V.sub.TH despite the fact that the potential at the gate electrode 16B is substantially equal to the ground potential. As a result, the negative overvoltage signal applied to the input terminal T.sub.A is undesirably transmitted to the output terminal T.sub.O through the analog switch circuit 10.sub.A which has been set in an off state, thus causing an adverse effect on the output signal OUT.
When a positive overvoltage which is higher than the power supply voltage V.sub.DD is applied as a noise to the input terminal T.sub.A, the transistor Q.sub.11 is turned on in reverse to the above, thus similarly causing an adverse effect on the output signal T.sub.O.

CMOS transfer switch free from malfunction on noise signal


A top head housing for a current transformer, mounted on top of an insulating column of the current transformer, and forming a chamber for windings of the current transformer, the top head housing being made of two parts fixed one to the other, and including two openings through each of which a conductor penetrates the chamber, the openings being symmetrically opposed with reference to a main vertical axis of the top head housing, wherein the two parts of the top head housing consist of two half shells including identical bodies.

Current transformers are commonly used in metering and protective relaying in power industry where they facilitate safe measurement of large currents, often in the presence of high voltages. The rapid growth and high demand in the power generation, transmission and distribution systems impels all manufacturing utilities to design compact, optimal and cost-efficient power equipment like current transformers.
Generally, a current transformer of top core design is formed by a top head housing supported by a hollow tubular insulated column, which is, in an embodiment, fixed on a grounded base. Secondary windings are enclosed in a metallic core casing, which in turn is connected to the ground through metal tube passing centrally through the hollow insulator. Either the metallic core housing or primary conductor is insulated for the voltage class.
The top head housing generally consists of two parts fixed together, a lower part and an upper part.
Generally, the lower part is bigger and comprises most of the means for supporting the other parts of the current transformer. The upper part, of smaller size, is mostly used to hermetically close the head housing.
The two parts of the top head housing are generally made by molding. Then, the manufacturing of the top head housing needs two sets of molds.
Embodiments of the invention aim to reduce the costs and to simplify the production of the parts of a top head housing.


The optical transmitter includes a semiconductor laser device, and an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device. The operating temperature of the optical modulator region is changed without changing the oscillation wavelength of the semiconductor laser device.

1. Field of the Invention
The present invention relates to an optical transmitter and more particularly to an optical transmitter a wavelength multiplexing optical communication system and an optical network using a plurality of pieces of signal light.
2. Related Art
Wavelength multiplexing optical communication, which transmits an optical signal with a plurality of wavelengths along the same optical transmission line, is an important technology for achieving higher performance and lower cost of communication technology and optical information processing technology. A first major object from this point of view is to control the wavelength of a light source for a plurality of channels, and a second major object is to provide an optical modulation means for achieving rapid optical modulation.
Controlling the wavelength of a light source for a plurality of channels in a wavelength multiplexing optical communication system is one of the most important techniques. The wavelength c)r frequency of each channel used is now precisely determined by an international standardization (ITU) at an interval of 50 GHz to 100 GHz (about 0.4 nm to 0.8 nm)
Light sources considered for wavelength multiplexing optical communication with wavelengths controlled in the above manner include a wavelength variable type light source wherein a plurality of channels are covered by using a semiconductor laser device with a wavelength-variable function, and a wavelength selection type light source wherein a plurality of semiconductor laser devices with different wavelengths are used. Realization of these techniques requires realization of a wavelength variable type semiconductor laser that makes it possible to sweep wavelengths efficiently, readily, and continuously, as well as a wavelength control technique for controlling a wavelength on the ITU grid with high reproducibility, or a wavelength stabilization technique for fixing a wavelength on the ITU grid over a long period of time.
On the other hand, the typical transmission speed in a long-distance main line system is currently 2.5 Gb/s to 10 Gb/s. Because of this high-speed transmission, the optical modulation system needs to be an external modulation system, in which optical modulation is performed outside of the light-emitting device, rather than a system in which modulation is performed directly by the light-emitting device. Thus the optical modulation means for achieving rapid optical modulation requires the form of a modulator-integrated light source, in which an optical modulator is monolithically integrated with a laser device. A wavelength selection type light source which, from this point of view, monolithically integrates a plurality of semiconductor laser devices having different wavelengths with an optical multiplexer, an electric field absorption type optical modulator, and the like has been reported. In this example, however, there is a problem in that the characteristics of the optical modulator are changed when the wavelength of the laser light led to the optical modulator is varied.
Incidentally, this type of wavelength multiplexing communication light source is reported in the Institute of Electronics, Information and Communication Engineers general convention SC-3-5, 1999.
As for the above-mentioned first object of controlling the wavelength of a light source for a plurality of channels, one of the major problems is how to set the wavelength of a semiconductor laser device to be used as the light source at a standard value. Currently the standard value is practically provided by the ITU grid. In order to solve the problem, the following two measures are provided for a current system. One is to monitor the wavelength of each channel and provide a wavelength stabilizing means for the light source, which feeds back the correction based on the result of monitoring to the drive of the light source. The other is to provide a spare light source device for each channel in case an individual channel device of such a complex light source should fail.
With the background of these techniques, each of a plurality of DFB (Distributed Feedback) laser devices that corresponds to each channel in the light source used for a wavelength multiplexing optical communication system needs to be built so as to fit into a specified narrow wavelength range. Therefore, there is a major problem in the yields in terms of device manufacturing.
This problem of wavelength control is a major obstacle to the achievement of smaller size and lower cost of an optical transmitter, and will also be a major object to further reduction in channel intervals and the increase in the number of channels in the future.
Next the above-mentioned second object of providing a means for rapid modulation will be dealt with. The characteristics of a current optical modulation means change mainly for the following reason. Optical modulators formed by semiconductor materials include electric field absorption type modulators, optical interference type modulators, and phase modulators. The optical modulation characteristics of these optical modulators formed by semiconductor materials, however, depend heavily on the difference between the band gap energy of the semiconductor material and the energy of the signal light (amount of detuning). Therefore, as the wavelength of the signal light is changed, the amount of detuning of the optical modulator is greatly changed.
In addition, chirping in particular becomes a problem in the case of long-distance transmission. It is desirable from this point of view that the chirping parameter of an optical modulator can be varied according to the transmission specifications. In the case of an electric field absorption type optical modulator, the chirping parameter can be changed by offset voltage. In this case, however, the laser light output is reduced especially when the offset voltage is increased. This is caused by optical absorption in the optical wave guide of the optical modulator.
A first object of the present invention is to provide an optical transmitter that will solve problems such as the wavelength control of a light source, the provision of an optical modulation means for achieving rapid optical modulation, and the control of the chirping characteristics of an optical modulator.
A second object of the present invention is to provide an optical transmitter suitable for realizing a light source for wavelength multiplexing communication with high reproducibility and provide a wavelength multiplexing transmission apparatus using the optical transmitter. The second object of the present invention will be achieved by using a simple method. The method will also enable minute tuning in optical communication, and enable especially the tuning of a wavelength standard channel that conforms to the ITU grid.
A third object of the present invention is to provide an optical transmitter suitable for long-distance transmission and a simple means for realizing the transmitter. More specifically, it controls the chirping parameter of a light source including an optical modulator.
The present invention will be useful especially for a complex light source using a semiconductor laser device with an external modulator monolithically integrated.
First the basic technical concept of the present invention will be described. The basic configuration of the present invention is a combination of a wavelength variable type light source or an integrated type multiple wavelength light source and an optical modulator. The optical combination form of the light source and the optical modulator may be either a form in which they are separated from each other hybrid integration) or a form that monolithically integrates each other (monolithic integration). Incidentally, the configuration itself in which a light source that emits light with a plurality of wavelengths and an optical modulator are integrated on a single substrate is already known. Specifically, in such an apparatus, part of the output light from a wavelength variable type light source or an integrated type multiple wavelength light source is led to an optical modulator to generate an optical signal by the on and off of the optical modulator.
Another object of the present invention is to provide a means for locally controlling the temperature of the optical modulator in the proximity of such an optical modulator. The temperature controlling means controls the temperature of an active wave guide layer in the optical modulator to a desired value. The basic form of the present invention will also help solve problems such as the wavelength control of a light source, the provision of an optical modulation means for achieving rapid optical modulation, and the control of the chirping characteristics of an optical modulator.
In a first specific example of operation according to the present invention, the band gap wavelength of an optical modulator is varied according to and to the same degree as variations in the wavelength of an optical signal introduced into the optical modulator, for example. To illustrate a more specific embodiment of the present invention, the temperature control means at least has a means to detect the wavelength of the light incident on the optical modulator, and a means to control the operating temperature of the optical modulator based on the detected wavelength. In practical use, the temperature control means further has a means to control the operating current of the semiconductor laser device based on the detected wavelength. The means to control the operating temperature of the optical modulator varies the band gap wavelength of the optical modulator according to and to the same degree as variations in the wavelength of an optical signal introduced into the optical modulator. For example, when the wavelength of the optical signal introduced into the optical modulator is increased, the band gap wavelength of the optical modulator is increased to the same degree. The means to control the operating current of the semiconductor laser device controls minute variations in oscillation power based on the wavelength variations.
The above means make it possible to provide rapid optical modulation that enables the wavelength control of a light source. According to the present invention, variations in the optically modulated waveform can be controlled to a low level even when the wavelength of signal light is changed. Furthermore, according to the present invention, the chirping parameter is held to a specified value, and variations in the chirping parameter can be controlled to a low level. That is, the modulation characteristics of light are controlled while variations in the chirping parameter required are controlled to a low level. Thus the present invention makes it possible to provide high-quality fiber signal transmission.
Next, in the other form of operation according to the third object of the present invention, attention is directed to the chirping parameter of the optical modulator as an object to be controlled. In this case, the chirping parameter can be controlled whether the light emitter is of the wavelength variable type or of the wavelength fixed type. Specifically, in the other form of operation according to the present invention, the wavelength of laser light is practically constant, and a temperature control means is provided in the proximity of the optical modulator, the temperature control means making it possible to change the chirping parameter of the optical modulator by controlling the temperature of the optical modulator.
The basic concepts of the present invention has been described. Next essential aspects of the present invention will be described.
According to a first aspect of the present invention, there is provided an optical transmitter comprising: a semiconductor laser device; an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for changing the operating temperature of the optical modulator region without changing the oscillation wavelength of the semiconductor laser device.
Or there is provided an optical transmitter comprising: a semiconductor laser device; an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for changing the operating temperature of the optical modulator region while maintaining a desired oscillation wavelength of the semiconductor laser device.
According to a second aspect of the present invention, there is provided an optical transmitter comprising: a semiconductor laser device; an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for externally changing the oscillation wavelength of the semiconductor laser device, and for changing the operating temperature of the optical modulator region without changing the oscillation wavelength of the semiconductor laser device.
Or there is provided an optical transmitter comprising: a semiconductor laser device; an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for externally changing the oscillation wavelength of the semiconductor laser device, and for changing the operating temperature of the optical modulator region while maintaining a desired oscillation wavelength of the semiconductor laser device.
According to a third aspect of the present invention, there is provided an optical transmitter comprising: a semiconductor laser device; an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for controlling the modulation characteristics of the optical modulator as the wavelength of the light incident on the optical modulator region is changed.
According to a fourth aspect of the present invention, there is provided an optical transmitter comprising: a semiconductor laser device; an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for externally changing the oscillation wavelength of the semiconductor laser device, and for controlling the modulation characteristics of the optical modulator as the wavelength of the light incident on the optical modulator region is changed.
According to a fifth aspect of the present invention, there are provided the optical transmitters wherein a heating element serves as the means for controlling the modulation characteristics of the optical modulator as the wavelength of the light incident on the optical modulator region is changed. A typical example of the heating element is a heater.
The above aspects of the present invention are applicable in both cases where the semiconductor laser device is the one with a single fixed wavelength and where it is a wavelength multiplexing semiconductor laser device. In these cases, it is important to locally change the temperature of the optical modulator. On the other hand, it is also important that the oscillation wavelength of the semiconductor laser device be practically set at a desired value. Thus it is required that the temperature of the optical modulator region be controlled without changing the oscillation wavelength from the semiconductor laser device. In other words, in the above aspects of the present invention the temperature of the optical modulator region must be controlled without changing the chirping parameter (xcex1p).
Other aspects of the present invention described below are provided for the third object of the present invention.
In the above-described aspects of the present invention provided for the second object, the temperature of the optical modulator region is controlled in such a way that the chirping parameter (xcex1p) is not changed. However, in order to achieve the third object of the present invention, the chirping parameter is adjusted to a desired value. This renders these aspects of the present invention useful for multiple wavelength long-distance transmission.
Specifically, according to another aspect of the present invention, there is provided an optical transmitter comprising: a semiconductor laser device; an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for changing the operating temperature of the the optical modulator region without practically changing the oscillation wavelength of the semiconductor laser device, and adjusting the chirping parameter to a desired value. Of course in this case, the optical modulator has specified modulation characteristics.
According to another aspect of the present invention, there is provided an optical transmitter comprising: a semiconductor laser device; an optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for externally changing the oscillation wavelength of the semiconductor laser device, and for changing the operating temperature of the optical modulator region without changing the oscillation wavelength of the semiconductor laser device and adjusting the chirping parameter to a desired value.
According to another aspect of the present invention, there is provided an optical transmitter comprising: a semiconductor laser device; at optical modulator region optically connected to the semiconductor laser device and having the function of modulating the output light from the semiconductor laser device; and a means for externally changing the oscillation wavelength of the semiconductor laser device, and for changing the operating temperature of the optical modulator region while maintaining the oscillation wavelength of the semiconductor laser device within xc2x11 nm.
According to another aspect of the present invention, there is provided an optical transmitter comprising a means for adjusting the chirping parameter of the optical modulator to a desired value by changing the operating temperature of the optical modulator.
The optical modulator, which is useful for inventions pertinent to the above-described optical transmitter of the present invention, controls a signal in a wavelength band in the proximity of the band gap in the light-emitting active region of the semiconductor light-emitting device whose light is made incident on the optical modulator. Optical modulators comprising such semiconductor materials include electric field absorption type modulators, optical interference type modulators, and phase modulators. The basic configuration of these optical modulators can be sufficiently realized by using normal materials, except for temperature control means.
In addition, the specific configuration of the above-mentioned semiconductor laser device can be selected as desired, depending on the purpose. For example, the configurations of the semiconductor laser device include the DFB (Distributed Feedback) type and the DBR (Distributed Bragg Reflection) type, each of which has a normal diffraction grating, or the one with a diffraction grating using an array wave guide. The active layer region can be configured as commonly known structures, depending on the purpose. The structures of the active layer region generally include a quantum-well structure, a multi-quantum well structure, a strained quantum-well structure, and a strain compensation type quantum-well structure. Furthermore, the emitted light can be used regardless of whether it is non-modulated light or modulated light.
In addition, it is practical to mount the entire module of an optical transmitter according to the present invention on a temperature control means or, for example, a Peltier element. Temperature stabilization by means of a Peltier element or the like is a common technique employed in semiconductor laser devices. However, the present invention is intended to locally control the temperature of the semiconductor laser device and the optical modulator region, independently of the temperature control by a temperature stabilization means provided for the entire module.
An optical transmitter or an optical transmission system according to the present invention will be described below.
The optical transmitters described above are useful in realizing a wavelength multiplexing optical communication apparatus which transmits information by propagating a light wave signal with at least two different wavelengths or more on the same optical transmission line. Also, the optical transmitters for the above wavelength multiplexing optical communication apparatus are useful especially when the interval between adjacent channels is 50 GHz to 100 GHz. Thus the optical transmitters according to the present invention are useful in satisfying the requirements for the wavelength or frequency of a channel specified by ITU.
Moreover, in the above optical communication apparatus, the above optical transmitters are extremely useful when a spare light source that can vary its oscillation wavelength is to be provided as an alternative light source in case a failure should occur in a channel light source. More specifically, if a failure occurs in the light source of a channel, the spare light source is operated. Then the system can be readily restored by using the wavelength variable function of the spare light source to perfectly match the wavelength of the spare light source to that of the channel whose light source has failed.
Furthermore, utilization of the present invention will realize an optical transmission apparatus which comprises any one of the optical transmitters described above, wherein information is transmitted by propagating a light wave signal with at least two different wavelengths or more on the same optical transmission line, the oscillation wavelength of the light source for each channel that the optical transmitter can be made variable, and a desired channel wavelength can be changed as necessary by an external signal.

Optical transmitter and optical signal transmitter


Ceramic-metal composites (cermets) are made by a combination of self-propagating high temperature combustion synthesis and molten metal infiltration. Solid-gas, solid-solid and solid-liquid reactions of a powder compact produce a porous ceramic body which is infiltrated by molten metal to produce a composite body of higher density. AlN-Al and many other materials can be produced.

The invention relates generally to metal-ceramic composite material (cermets), combustion synthesis, and infiltration, and more particularly to certain metal-ceramic composites including AlN-Al and methods for making same.
A variety of refractory ceramic materials including nitrides, nitride-oxide and carbide-oxide composites have been produced by combustion synthesis of powder compacts. The process uses heat evolved during spontaneous chemical reactions between mixtures of solids, solids and liquids or solids and gases produced as a combustion wave initiated by an ignition source rapidly propagates through the compact. The key to self-propagating high temperature synthesis (SHS) is that once initiated, highly exothermic reactions will become self-sustaining and will propagate through the reactant mixture in the form of a combustion wave. As the combustion wave (front) advances, the reactants are converted to products. A major advantage of SHS as a process for the synthesis of materials is the energy savings associated with the use of self-sustaining reactions.
Various carbides, borides, selenides, silicides and sulfides can be produced by solid-solid reactions. The starting powders, either metal and metal or metal and nonmetal, are mixed in stoichiometric proportions and cold pressed into a powder compact, typically cylindrical in shape. A heated tungsten coil (or other ignition source) ignites the top surface of the compact. The combustion wave moves rapidly down the compact and leaves behind the refractory product Various nitrides and hydrides can similarly be produced by solid-gas reactions. The metal powder compact is placed in a chamber and nitrogen or hydrogen gas at a suitable pressure, typically about 0.1 MPa (1 atm) or greater, is introduced prior to igniting the compact. The gas pressure must equal or exceed the dissociation pressure of the nitride or hydride at the adiabatic temperature. Some materials require high pressures; e.g. AlN is formed at 14 MPa and Si.sub.3 N.sub.4 at 50 MPa.
Metal powders including Al, Si, Ti, and Zr have been combusted in nitrogen gas to form refractory nitrides. The processes are rapid and require no high temperature furnaces. However, when combustion of most metals is carried out at 1 atmosphere pressure of nitrogen, the yield may be low (under 50%). Insufficient nitrogen fills the pore space of a cold pressed compact of metal powders to achieve full conversion at 1 atm, and molten metal at the wave front restricts flow of nitrogen from outside the compact. In some cases a solid source of nitrogen such as NaN.sub.3 can be used; e.g. ZrN, TiN, HfN, and YN have been synthesized by this method. However, AlN, Si.sub.3 N.sub.4 and BN cannot be formed at 1 atm of pressure using a solid nitrogen source because of high dissociation pressures. Therefore, it is necessary to perform the combustion process in nitrogen gas under high pressure, about 10-100 MPa (100-1000 atm).
The major disadvantage of combustion synthesis is that the product is a very porous (about 50% dense) and tightly bonded solid, or a powder. The porous solid may be useful as formed, or can be easily attrited into a powder. It is generally difficult to form a fully dense product by combustion synthesis. Typically the combustion process is carried out with the simultaneous application of high external mechanical pressure. Pressure techniques include uniaxial rams, explosive compaction, isostatic pressing, and application of shock waves generated by gas guns.
Ceramic-metal composite materials (cermets) generally combine the hardness and light weight of ceramics with the toughness of metals. U.S. Pat. No. 4,605,440 issued Aug. 12, 1986 to Halverson et al. describes boron carbide-reactive metal composites, particularly B.sub.4 C-Al composites, and methods for making same. The process achieves conditions for liquid phase sintering of the metal and ceramic (B.sub.4 C) to occur. Prior to heat treatment a variety of consolidation techniques can be used to produce a fully dense composite with negligible porosity. Low temperature and pressure methods such as consolidation of codispersed ceramic and metal powders are preferred to form a green body which is then heat treated to form a fully dense composite with tailorable microstructure.
Infiltration of a molten metal into a ceramic sponge is known and has been carried out by various different methods. U.S. Pat. No. 3,718,441 to Landingham shows a method of forming metal-filled ceramics of near theoretical density by heating in a vacuum a ceramic compact with a filler metal. U.S. Pat. No. 4,585,618 to Fresnel et al shows an infiltration process in which a bulk reaction mixture of ceramic particulates is reacted to produce a self-sustaining ceramic body while in contact with molten metal which moderates the reaction and infiltrates the resulting ceramic body. U.S. Pat. No. 4,718,941 issued Jan. 12, 1988 to Halverson et al describes an improved infiltration process in which a chemically pretreated porous B.sub.4 C or other boron or boride ceramic matrix or sponge is infiltrated with molten aluminum or other metal to form metal-ceramic composites of high density.
Accordingly, it would be beneficial to combine the advantageous features of combustion synthesis and infiltration in a single process to form a variety of metal-ceramic composite materials having high density which are hard, tough and light in weight. Combustion synthesis would allow formation of the ceramics from elemental components at low energy and material cost. Infiltration would provide high density and metal-ceramic reactions would produce desirable microstructures. It is desirable to control the amount of metal phase to tailor the properties of the composite for particular applications.
In particular, aluminum nitride is a ceramic material which exhibits high thermal conductivity, high electrical resistivity, high mechanical strength, and resistance to oxidation and thermal shock. As such it is commercially important for use as electronic substrates and high temperature applications. A method for forming dense AlN or AlN-Al cermet by combustion synthesis of aluminum powder in a high pressure nitrogen atmosphere is described in U.S. patent application Ser. No. 055,475 filed May 29, 1987, now U.S. Pat. No. 4,877,759, issued Oct. 31, 1989. At about 1000 atm pressure, the product is a completely converted AlN compact densified to about 92% of theoretical density. At about 680 atm the product is a cermet of AlN in an Al matrix. It is desirable to produce a high density AlN-Al cermet with controllable amounts of Al in a ceramic matrix.

Cermet materials prepared by combustion synthesis and metal infiltration

The United States of America as represented by the United States Department of Energy


A jogging exercise stroller having a pair of pivotally connected arms. A user encounters greater resistance pivoting the arms in the direction of motion of the stroller than pivoting the arms in the opposite direction.

1. Field of the Invention
The invention relates to a stroller. More particularly, the invention relates to an exercise device for use with a baby stroller.
2. Description of the Prior Art
Physical fitness has increasingly become an area of concern for parents with newborn babies. This is particularly true for women that traditionally have difficulty regaining their prepregnancy weight. However, many people do not have the time to exercise. As a result, walking a baby in a stroller has become a convenient way, particularly for new mothers, to stay fit and healthy, and to spend time with their child while doing so.
Joining a gym would on the surface seem the obvious choice for parents with toddlers. However, gyms are costly and few offer quality childcare. Besides for the high price of gym membership, parents generally experience tremendous guilt and separation anxiety when leaving their child in someone else's care. This situation is even further compounded for men and women juggling careers with the arduous duties of parenthood.
To that end, cross-country skiing machines that once exclusively adorned gyms can now be found in homes from coast to coast. Cross-country skiing machines have quickly become the home exercise device of choice for parents with children because they provide a user with a full aerobic workout. However, there is a distinct disadvantage to cross-country skiing devices in that they confine the user to one area, usually indoors. Moreover, parents are again left with the daunting task of watching their children while attempting to exercise.
U.S. Pat. No. 5,674,165, issued to Cohen et al., discloses an exercising device provided for use with a baby stroller of the type having a housing secured to the frame of a stroller, and an elongated arm pivotally attached at one end to the housing. The apparatus further includes a device for preventing pivotal movement of the arm relative to the housing until a torsional force greater than a predetermined level is applied to the other end of the arm.
U.S. Pat. No. 5,876,309, issued to Archey, discloses a similar jogging exercise stroller having a pair of arcuate handles pivotally connected on one end to an upper cross member of the stroller. A pair of shock absorbers extend between the arcuate handles and the lower cross member of the stroller.
Both Cohen and Archey recognize the need for a stroller capable of providing the user with an upper body workout. However, a user attempting to exercise with either Cohen's or Archey's device quickly learns that they are not practically designed. The back and forth motion of the arms interrupt the fluid forward movement of the stroller. The Cohen and Archey devices are not as suitable for the purposes of the present invention as disclosed hereafter.

Stroller having an upper body exercise propulsion mechanism


A reference signal mapping method and a reference signal mapping device are provided. The reference signal mapping method includes steps of: determining a position of a RE to which a CSI-RS has been mapped in accordance with an N-port reference signal pattern, N being equal to 12 or 16; and performing a resource mapping operation on the CSI-RS in accordance with the determined position of the RE. The position of the RE to which the CSI-RS has been mapped in the N-port reference signal pattern being determined in accordance with a position of the RE to which the CSI-RS has been mapped in one or more of a 2-port reference signal pattern, a 4-port reference signal pattern and an 8-port reference signal pattern. As a result, it is able to achieve the 12-port or 16-port CSI-RS mapping, thereby to achieve the 12-port or 16-port CSI-RS transmission.

In a Release 10 (Rel-10) Long Term Evolution (LTE) system, for downlink transmission, five reference signals have been defined, i.e., Cell-specific Reference Signal (C-RS), User Equipment-specific Reference Signal (UE-RS, also called as Demodulation-Reference Signal (DM-RS)), Multimedia Broadcast multicast service Single Frequency Network (MBSFN) reference signal, Positioning-Reference Signal (P-RS), and Channel State Information Reference Signal (CRI-RS). The CSI-RS is used for downlink channel measurement and estimation.
FIGS. 1A, 1B and 1C show reference signal patterns supporting the CSI-RS in the LTE system respectively. The reference signal patterns show positions of resources for different reference signals, i.e., positions of Resource Element (REs), to which the different reference signals are mapped, in a Physical Resource Block (PRB).
One reference signal is transmitted through each downlink antenna port. One PRB includes 20 2-port reference signal patterns (as shown in FIG. 1A), 10 4-port reference signal patterns (as shown in FIG. 1B), and 5 8-port reference signal patterns (as shown in FIG. 1C).
As shown in FIGS. 1A, 1B and 1C, the current LTE system may configure 2 ports, 4 ports or 8 ports for the CSI-RS, but it is impossible for the LTE system to support the CSI-RS with more ports.

Reference signal mapping method and device

CHINA ACADEMY OF TELECOMMUNICATIONS TECHNOLOGY


The present invention provides a discharge lamp apparatus including a high pressure discharge lamp, a concave reflection mirror, and a laser light source. An electrical discharge space is within the high pressure discharge lamp. A pair of electrodes faces each other in the electrical discharge space. A concave reflection mirror surrounds the high pressure discharge lamp. A laser light source emits laser light of a red wavelength band, wherein the laser light passes through the electrical discharge space.

A discharge lamp apparatus used as a light source of, for example, a projector and a cinema projector comprises a high pressure discharge lamp, which serves as a light emitting source, and a concave reflection mirror, which surrounds the high pressure discharge lamp. An optical system such as an integrator lens and a reflective mirror, and a spatial modulation element such as a DLP (Registered Trademark) and a liquid crystal panel are provided on a front side thereof in a light emitting direction of the concave reflection mirror, whereby light from the high pressure discharge lamp is emitted onto a screen to project an image on the screen.
In general, a light source, which has emission spectrum excellent in color balance of RGB, is required, to project an image, which is excellent color-reproduction nature on the screen. However since the light intensity of a red component is low in such a high pressure discharge lamp that is formed of an ultrahigh pressure mercury lamp while the light intensity of a green component is relatively high, it does not have the emission spectrum that is excellent in color balance of RGB as a whole, so that when the high pressure discharge lamp is used as a light source, there is a problem that the color-reproduction nature of the image projected on the screen is low.
To solve such a problem, in Japanese Patent Application Publication No. 2004-29267, a discharge lamp apparatus is proposed wherein a laser light source, which emits laser light of a red wavelength band, is provided separately from a high pressure discharge lamp, and the laser light is synthesized with light emitted from the high pressure discharge lamp. In the discharge lamp apparatus, the laser light source is arranged on a front side thereof in a light emitting direction of a concave reflection mirror, and the laser light is synthesized with the light emitted from the high pressure discharge lamp, on an optical path along the central axis (optical axis) of the concave reflection mirror, whereby the laser light, which is red light, is added to the light emitted from the high pressure discharge lamp, so that the light intensity of the red component may be compensated. Therefore, the light source, which has emission spectrum excellent in the color balance of RGB, can be obtained, and when such a light source is used as a light source of a projection type display apparatus, an image with an excellent color-reproduction nature may be projected.
However, since a degree of coherence of light emitted from such a laser light source is high compared with light emitted from such a high pressure discharge lamp, there is a phenomenon called "speckle noise," that is, a garish flickering on a screen occurs due to interference of the laser light, whereby the quality of an image deteriorates.

Discharge lamp apparatus including a high pressure discharge lamp, a concave reflection mirror, and a laser light source


A wafer is divided into a plurality of individual devices along a plurality of crossing division lines formed on the front side of the wafer. The wafer has a substrate, a functional layer formed on the front side of the substrate, and an SiO2 film formed on the front side of the functional layer. The individual devices are formed from the functional layer and partitioned by the division lines. The functional layer is removed by applying a laser beam to the wafer along each division line to thereby remove the functional layer along each division line. The laser beam has an absorption wavelength to the SiO2 film with high absorptivity due to the stretching vibration of an O—H bond or a C—H bond remaining in the SiO2 film. The wafer is then divided into the individual devices.

1. Field of the Invention
The present invention relates to a wafer processing method for dividing a wafer into a plurality of individual devices along a plurality of crossing division lines formed on the front side of the wafer, the wafer being composed of a substrate and a functional layer formed on the front side of the substrate, the individual devices being formed from the functional layer and partitioned by the division lines.
2. Description of the Related Art
As well known in the art, in a semiconductor device fabrication process, a functional layer composed of an insulating film and a functional film is formed on the front side of a substrate such as a silicon substrate, and a plurality of devices such as ICs and LSIs are formed like a matrix from this functional layer, thus obtaining a semiconductor wafer having the plural devices. The plural devices are partitioned by a plurality of division lines formed on the front side of the semiconductor wafer. The semiconductor wafer is divided along these division lines to obtain the individual devices.
In recent years, a semiconductor wafer intended to improve the processing performance of semiconductor chips (devices) such as ICs and LSIs has been put into practical use. This semiconductor wafer is composed of a substrate such as a silicon substrate and a functional layer formed on the front side of the substrate, wherein the functional layer is composed of a low-permittivity insulator film (low-k film) and a functional film formed on the low-k film, the functional film forming a plurality of circuits. Thus, the semiconductor devices are formed from the functional layer. The low-k film is formed from an inorganic film of SiOF, BSG (SiOB), etc. or an organic film such as a polymer film of polyimide, parylene, etc.
Division of such a semiconductor wafer along the division lines is usually performed by using a cutting apparatus called a dicing saw. This cutting apparatus includes a chuck table for holding the semiconductor wafer as a workpiece, cutting means for cutting the semiconductor wafer held on the chuck table, and moving means for relatively moving the chuck table and the cutting means. The cutting means includes a rotating spindle adapted to be rotated at high speeds and a cutting blade mounted on the rotating spindle. The cutting blade is composed of a disk-shaped base and an annular cutting edge mounted on one side surface of the base along the outer circumference thereof. The annular cutting edge is an electroformed diamond blade formed by bonding diamond abrasive grains having a grain size of about 3 μm, for example.
However, it is difficult to cut the low-k film mentioned above by using the cutting blade. That is, the low-k film is very brittle like mica. Accordingly, when the semiconductor wafer having the low-k film is cut along the division lines by using the cutting blade, there arises a problem such that the low-k film may be separated and this separation may reach the devices to cause fatal damage to the devices.
To solve this problem, Japanese Patent Laid-Open No. 2009-21476 discloses a wafer dividing method including the steps of applying a laser beam along both sides of each division line on a semiconductor wafer to form two laser processed grooves along each division line, thereby dividing a stacked layer and next positioning a cutting blade between the outer side walls of the two laser processed grooves along each division line to relatively move the cutting blade and the semiconductor wafer, thereby cutting the semiconductor wafer along each division line.


A push-pull buffer amplifier and a source driver are provided. In the buffer amplifier, the N-type and the P-type comparators compare an input signal and an output signal. The input terminals of the first and the second inverters are coupled to the first output terminals of the N-type and the P-type comparators, respectively. The first and the fourth transistors are controlled by the second output terminal of the N-type comparator and the output terminal of the second inverter, respectively, so that the first voltage line charges/discharges an output load. The second and the third transistors are controlled by the second output terminal of the P-type comparator and the output terminal of the first inverter, respectively, so that the second voltage line charges/discharges the output load.

1. Field of the Invention
The present invention relates to a buffer amplifier, and more particularly, to a rail-to-rail push-pull buffer amplifier and a source driver with such buffer amplifier application.
2. Description of the Related Art
In an electronic circuit, a buffer amplifier usually is used to transmit a signal to a terminal and to drive the next stage circuit. For example, in a liquid crystal display, a source driver comprises a buffer amplifier to apply an analog voltage required for the liquid crystal display to the liquid crystal display. The buffer amplifier, therefore, is an essential device in the source driver. An excellent buffer amplifier provides high-speed operation and accuracy. In the application of a portable device, such as a notebook or a personal digital assistant, power consumption is the most concerned issue of a buffer amplifier.
U.S. Pat. No. 6,331,846 discloses an operational amplifier which removes offset of the circuit. The prior art comprises complicate circuits, frequently switching signal routes to achieve its objects. The prior art circuit, however, results in high costs of the circuit, and the frequently switching the signal routes also generates noises.
In addition, U.S. Pat. No. 6,137,360 discloses a voltage follower with a rail-to-rail buffer amplifier. Although the offset-removing mechanism is not required, the charging rate and discharging rate are not equal in the prior art technology while the next stage circuit is driven.

Push-pull buffer amplifier and source driver


In embodiments of the present disclosure, weighting on a direct current component coefficient dci′ of an I-channel signal and a direct current component coefficient dcq′ of a Q-channel signal is performed based on spatial leakage factors k1 and k2 of a microwave chip and a current attenuation amount of a tunable attenuator, to determine a corrected direct current component coefficient dci of the I-channel signal and a corrected direct current component coefficient dcq of the Q-channel signal, and a direct current component superimposed to the I-channel signal of the microwave chip and a direct current component superimposed to the Q-channel signal of the microwave chip are respectively determined based on the corrected direct current component coefficient dci of the I-channel signal and the corrected direct current component coefficient dcq of the Q-channel signal.

With development of highly integrated microwave chips, a problem of spatial leakage in a chip has become a bottleneck of microwave chip performance improvement. For a common microwave integrated chip with an architecture of an upconverter and a tunable attenuator, local oscillator leakage caused by insufficient isolation is hard to be resolved by using a conventional quadrature modulation correction (QMC) solution. A local oscillator suppression filter is hard to be implemented in a high frequency band, and cannot be integrated inside the chip. Local oscillator leakage seriously affects transmit power precision, transmitter spurious emission, and link linearity.
Therefore, how to effectively suppress local oscillator leakage caused by insufficient spatial isolation inside a microwave chip is an issue to be resolved urgently.

Method for suppressing local oscillator leakage in microwave chip and apparatus thereof


A reverberation imparting device for electro-acoustically enhancing reverberation in acoustic space comprises a microphone disposed in the acoustic space, a loudspeaker disposed in the acoustic space for diffusing the sound picked up by the microphone, and feedback means comprising a signal processing circuit for electrically processing an electric signal corresponding to the sound picked up by the microphone, an output of the signal processing circuit being supplied to the loudspeaker. The microphone, feedback means and loudspeaker form a feedback loop. The signal processing circuit comprises a circuit for subjecting impulse responses of finite length to a convolution operation. Time axis of reflected sounds is extended and extension of reverberation time thereby is realized without depending upon loop gain. Density of reflected sounds is increased by subjecting impulse responses of finite length to a convolution operation whereby separation of reflected sounds is prevented.

This invention relates to a device for electro-acoustically enhancing reverberation in acoustic space and, more particularly, to a device of this type capable of extending reverberation time by a large extent while preventing occurrence of howling.
Recent diversification of purposes or uses of public facilities such as a concert hall, multi-purpose hall, an event hall and multi-purpose gymnasium has brought about complication of architectural condition in designing these public facilities which has necessitated utilization of electro-acoustic systems therein. Particularly, it is desired in acoustic design to cope with architectural conditions such as those in a hall of a special shape (e.g., amphitheatre), large-scale event hall (e.g., multi-purpose gymnasium) and multi-purpose hall (e.g., banquet hall) for which conventional architectural acoustics technique cannot provide an optimum design and, for this purpose, it has become necessary to utilize electro-acoustic means even with respect to conditions which have heretofore been controlled by architectural acoustic means.
A sound field control method utilizing an electro-acoustic system not only is capable of varying acoustic conditions to a large extent without being bound by architectural restrictions but also is superior to architectural adjusting such as adjusting by using sound absorbing material in controllability, operability and economic aspect and hence practical application of the sound field control method utilizing electro-acoustic system is greatly anticipated.
In a prior art electro-acoustic system, extension of reverberation time has generally been achieved by reinforcing reverberation sound corresponding to reduction of equivalent sound absorption area. More specifically, reinforcing of energy density E is achieved by using relationship ##EQU1## where RT.sub.60 : reverberation time K: proportional constant
E.sub.0 : diffused sound energy density PA1 V: capacity of the room PA1 W: sound source output power PA1 C: sound velocity PA1 A: equivalent sound absorption area
This prior art system is realized by providing, as shown in FIG. 2, a sound collecting microphone 12 and a loudspeaker 14 in an acoustic space 10, reinforcing by an amplifier 16 direct sound and reflected sound from a sound source which have been picked up by the microphone 12 and sounding the reinforced sound from the loudspeaker 14. A feedback loop is formed in this system by picking up sound from the loudspeaker 14 again by the microphone 12 and radiating this sound from the loudspeaker 14 after amplification by the amplifier 16. Thus, reverberation time RT.sub.60 is extended by reinforcing energy density E.sub.0 by reducing equivalent sound absorption area A.
According to this system, reverberation time RT.sub.60 is extended, as shown in FIG. 3, by increasing loop gain by the amplifier 16. The frequency characteristics of the loop, however, have sharp peak portions as shown in FIG. 4 due to a comb filter effect formed by the feedback loop and these peak portions growing in the frequency characteristics tend to produce howling. For this reason, increase in the loop gain is restricted and the maximum value RT.sub.60 of reverberation time is limited to: EQU RT.sub.max =K.multidot.g.multidot.E.sub.0 .multidot.V
where g represents maximum sound reinforcement gain (e.g., value which is 9 dB below the gain at which howling is generated). Besides, in this system, coloration is produced due to the comb filter effect formed by the feedback loop resulting in occurrence of unnaturalness in the reverberation effect.
Accordingly, the reverberation time extension control utilizing loop gain has limitation in the range of extension of reverberation time due to the instability of the feedback loop and coloration in tone quality.
There are AR (Assisted Resonance) system and MCR (Multi-channel Amplification of Reverberation) system as improved systems of the above described system which are intended to extend reverberation time while ensuring stability of the feedback loop.
In the AR system, a multiplicity of band-limited channels A through N are provided in the acoustic space for ensuring stability of the feedback loop and the level of diffused sound is reinforced by amplifying diffused sound in the acoustic space for each frequency band thereby to extend reverberation time. The construction of this system is schematically shown in FIG. 5. In each of the channels A through N, diffused sound picked up by a microphone 18 is supplied through a preamplifier 20 to a filter 22 for band-limitation and the output of the filter 22 is supplied to a loudspeaker 26 through a power amplifier 24. A feedback loop is formed in such a manner that sounds from the loudspeakers 26 in the respective channels are combined together and the combined sound is picked up again by the microphone 18 of each channel. Since it suffices in this system to reduce loop gain only in a frequency band in which howling is generated, this system is capable of increasing the entire diffused sound energy density E.sub.0 in comparison with the system of FIG. 2 in which loop gain of the entire bands is reduced so that reverberation time can be extended by a larger extent.
In the MCR system, a multiplicity of independent channels A through N including all frequency bands are provided and extension of reverberation time is achieved by reinforcing diffused sound level in the sound system as in the AR system while flattening transmission frequency characteristics in the feedback loop of each channel. The construction of this system is schematically shown in FIG. 6. In each of the channels A through N, diffused sound picked up by a microphone 28 is supplied to a graphic equalizer 32 through a preamplifier 30 and the output of the graphic equalizer 32 is suplied to a loudspeaker 36 through a power amplifier 34. A feedback loop is formed in each channel in such a manner that sound from the respective loudspeakers 36 in the channels A through N are combined and the combined sound is picked up again by the microphone 28 of each channel. In each of the channels A through N, the graphic equalizer 32 reduces peak gain in a frequency band portion in which howling tends to be generated (this band portion differs one channel from another due to difference in positions of the components of the system).
According to this system, peak frequencies produced due to the comb filter effect are dispersed by using a multiplicity of channels so that total frequency characteristics are made substantially flat. As a result, diffusion sound energy density E.sub.0 in the frequency bands as a whole increases and reverberation time can be extended by a larger extent.
The AR system and the MCR system are both constructed on the basic concept of performing reinforcement of reverberation sound corresponding to reduction in equivalent sound absorption area in the acoustic space while subtly maintaining stability of acoustical feedback. In the respective systems, energy addition of amplified gain due to multiple channels is achieved while maintaining stability of a feedback loop by constructing independent channels in the frequency region in the AR system and in time region in the MCR system.
In the AR system and MCR system also, extension of reverberation time is made by increasing loop gain as in the system of FIG. 2. A large number of channels (e.g., several tens or more) are required for achieving extension of reverberation time by a larger extent while mainitaining stability of the feedback loop and this incurs increased cost and requires increased time and trouble in adjusting the large number of channels.


Disclosed herein are a composite semipermerable membrane and a method for producing the same. The composite semipermeable membrane comprises a microporous support membrane and a separation functional layer provided on the microporous support membrane, wherein the separation functional layer contains a condensation product produced by condensation of at least one selected from the group consisting of ions of trialkoxysilanes each having an imidazolium group and a conjugated base of a polymer having at least one acidic group. The composite semipermeable membrane achieves excellent selective separation of divalent ions over monovalent ions, and is suitable for use in various water treatment fields such as seawater desalination and drinking water production.

There are various techniques for removing dissolved substances (e.g., salts) from their solvents (e.g., water), but in recent years, membrane separation processes have been actively used in water treatment fields as low-cost processes for saving energy and resources. Typical membranes for use in membrane separation processes are microfiltration membranes, ultrafiltration membranes, nanofiltration membranes (NF membranes), and reverse osmosis membranes (RO membranes).
Most of RO membranes and NF membranes are composite semipermeable membranes, and most of them are divided into two types: one has a structure in which a gel layer and a thin film layer (separation functional layer) formed by cross-linking a polymer are provided on a microporous support membrane; and the other has a structure in which a thin film layer (separation functional layer) formed by polycondensation of a monomer is provided on a microporous support membrane. As materials of these thin film layers, cross-linked polyamides are often used. Among them, a composite semipermeable membrane, such as one disclosed in Patent Document 1 or 2, produced by coating a microporous support membrane with a thin film layer made of a cross-linked polyamide obtained by the polycondensation reaction between a multifunctional amine and a multifunctional acid halide is widely used as a reverse osmosis membrane or an NF membrane due to its high water flux and high salt rejection.
In addition to salt rejection performance, ion selective separation performance can also be considered as a factor having an economic impact on water treatment using RO and NF membranes. For example, in a case where a membrane has low selective separation performance even though the membrane is required to allow the passage of monovalent ions but not of divalent ions, the concentration of ions is excessively increased on one side of the membrane and the osmotic pressure on that side of the membrane is increased. When the osmotic pressure on one side of the membrane is increased, ions increasingly try to pass through the membrane to balance the pressure on each side of the membrane, and therefore a higher pressure is required to allow desalinated water to forcibly pass through the membrane. This consequently requires a large amount of energy and therefore increases costs for water treatment.
Currently-used RO and/or NF membranes do not satisfactorily achieve selective separation of divalent ions over monovalent ions, and therefore overall salt rejection rate is high and a large osmotic pressure difference is created across the membrane. Accordingly, a higher pressure, that is, a larger amount of energy is required to achieve a practical flux. For this reason, currently-used RO and/or NF membranes are not satisfactory from the viewpoint of energy conservation.
On the other hand, in the fields of materials, organic-inorganic hybrid materials are known, which are obtained by combining a hydrophilic organic polymer and a condensation product of a silicon compound by utilizing molecular interaction (see, for example, Patent Documents 3 and 4 and Non-Patent Document 1). However, such materials have not been previously used in industrial applications.

Composite semipermeable membrane and method for producing the same


Provided is an ink composition that can form an image in which bleeding caused when the image is recorded by an ink jet method is inhibited and which has excellent toughness and glossiness and shows excellent adhesiveness with respect to various substrates, even when being dried at a low temperature. The ink composition for an ink jet including (a) an alkyl(meth)acrylate copolymer which contains an alkyl(meth)acrylate having 7 to 22 carbon atoms in total and a repeating unit derived from (meth)acrylic acid and has an acid value of 1.3 mmol/g to 2.0 mmol/g in an unneutralized state, and (b) an aqueous medium containing water.

1. Field of the Invention
The present invention relates to an ink composition, an image forming method, and a printed article using the same.
2. Description of the Related Art
As image recording methods for forming an image on a recording medium such as paper based on image data signals, there are an electrophotographic method, sublimation- and fusion-type thermal transfer methods, an ink jet method, and the like. The electrophotographic method requires a process for forming an electrostatic latent image on a photosensitive drum by charging or exposure, so the system becomes complicated. As a result, the method has a problem of the increase in production cost and the like. In addition, though the device for the thermal transfer method is inexpensive, the method uses ink ribbons. Therefore, the method has problems that the running cost is high, waste materials are produced, and the like.
On the other hand, in the ink jet method, an inexpensive device is used, and an ink is discharged only to a necessary image portion to directly form an image on a recording medium. Accordingly, the method is advantageous in that the ink can be used efficiently and the running cost is low. Moreover, the method generates little noise and is excellent as an image recording method.
Among ink compositions used in image recording performed by the ink jet method, an aqueous ink using latex can be suitably used not only in image printing, but also in pre-treatment for imparting printing suitability to a recording medium, post-treatment for protecting and decorating the printed image, and the like. Moreover, containing water as a main component, the aqueous ink is excellent in safety and is applicable to high-density ink jet recording due to its low viscosity. In this way, the aqueous ink using latex is a technique having various excellent characteristics and potential.
As an example of basic constituent materials of the aqueous ink containing latex, there is a disclosure regarding an ink composition that contains water, acrylic polymer latex having a particle size of about 200 nm, a water-soluble organic solvent, a pigment dispersion, and a surfactant and exhibits excellent ink resistance after drying or discharge properties (for example, see JP2011-507991A).

Ink composition, image forming method, and printed article using the same


An electrical power system includes an alternating current (AC) power source configured to output an AC signal, a single phase pulse-width modulated (PWM) rectifier coupled to the AC power source and to an electrical load; a DC link capacitor coupled in parallel to the load and the PWM rectifier; and an active ripple energy storage circuit. The active ripple energy storage circuit has a first terminal, a second terminal and a third terminal, the active ripple energy storage circuit being coupled in parallel to the electrical load, the PWM rectifier and the DC link capacitor via the first terminal and the second terminal, the third terminal being coupled to the second terminal, the active ripple energy storage circuit being configured to selectively absorb and discharge at least part of the ripple energy.

A characteristic of a typical single-phase pulse width modulated (PWM) rectifier is the formation of ripple power on the direct current (DC) link, e.g., where the alternating current (AC) input voltage and current are sinusoidal. The ripple power is generally twice the AC input frequency and can therefore cause low frequency DC ripple voltage on the DC bus. Although various schemes to reduce or eliminate the ripple component have been proposed, most such schemes adversely affect the power density of the rectifier system.
What is needed in the art is a system configured to absorb the ripple energy, but with a reduced power density relative to previous systems.

Electrical power system with high-density pulse width modulated (PWM) rectifier


Described herein are oral care compositions comprising a whitening agent having the formula: R1—O—O—R2; and an aliphatic ketone; wherein R1 and R2 are independently selected from hydrogen, C1-C6 alkyl, C2-C6 alkenyl, C2-C6 carbonyl, SO3, and phenyl; and methods of making and using the same.

Dentifrice formulations comprising various tooth whitening agents are known as being useful for cleaning and whitening teeth. A well-known tooth whitening agent is hydrogen peroxide. The hydrogen peroxide can bleach the teeth, remove stains, and kill cariogenic bacteria. In order to deliver a good whitening efficacy with an acceptable usage time, dentifrice compositions are formulated with a high peroxide content, typically above 1 wt % of the composition. However, peroxide compounds are highly reactive, and many countries have strict regulations restricting the concentration of hydrogen peroxide.
Thus, there is a need for improved single phase whitening oral care compositions, for example dentifrice compositions, which contain a whitening agent other than hydrogen peroxide and can deliver enhanced whitening performance versus known compositions.


This shipper is constituted by a movable platform (1) which is provided with a loading hopper (3) having a suitable capacity, from which platform (1) projects a support (7) for a bulk elevating system (9) which may be coupled to one of the ends of the hopper (3) and which in turn extends into another discharge tube (14), such that these tubes, when in an inactive position, are horizontally folded on each other, while when in a working position they form an angle capable of overcoming obstacles of considerable height and width and the discharge tube (14) ending in a discharge nozzle (17) which may be pointed in any direction. A cabin (21) is also established on this platform (1) housing the control device of the assembly and the roof of which is provided with a support (22) for the bulk elevating system (9) and the discharge tube (14), when the latter are inactive or when the assembly is being transported.

In practical application such as the one mentioned above, i.e., for bulk carrying from the storage area to ship holds, bulk is currently carried by different means from the said storage area to an area of the dock right next to the relevant ship, and from this point, with the aid of mechanical shovels, crab cranes, etc., the bulk is definitively moved to the ship holds, which solution is valid for want of a more practical one, although it is obviously slow and painstaking, and therefore negatively affects the economical aspect.


Provided are a base 4 to be inserted into a socket by being rotated around a central axis X of the base, a first body 6 attached to the base 4 so as to be rotatable freely around the central axis X, a second body 8 attached to the first body 6, and a light-emitting module 10 mounted on the second body 8. The second body 8 is attached to the first body 6 so as to be swingable in a direction perpendicular to the central axis X.

The use of bulb-type (compact) fluorescent lamps is increasing, as these lamps have a longer life expectancy and are more efficient than incandescent light bulbs, while being usable directly in sockets for incandescent light bulbs. Bulb-type LED lamps, which are easily made compact and have a life expectancy and efficiency superior even to bulb-type fluorescent lamps, have also become available. To permit replacement of incandescent light bulbs, such bulb-type lamps are provided with the same sort of base as incandescent light bulbs.
Bulb-type fluorescent lamps have been commercialized as a replacement for incandescent light bulbs, specifically for silica bulbs having an E26 base.
There is also a desire for a replacement light source to be developed for small light bulbs, of which mini krypton bulbs are representative. Mini krypton bulbs are smaller incandescent light bulbs than silica bulbs and have an E17 base. Due to constraints on size, however, it is difficult for a fluorescent bulb to achieve the desired brightness, and therefore use of LEDs is under study.
Current lighting fixtures that use mini krypton bulbs are typically downlights, and in at least 90% of these downlights, the bulb is inserted horizontally (i.e. so that the axis of the base is orthogonal to the vertical axis) or at a nearly horizontal inclination.
By contrast, typical bulb-type LED lamps (Patent Literature 1) are provided with an LED module that is a light-emitting module for shining light primarily in a forward direction along the axis of the base. Therefore, bulb-type LED lamps are not appropriate for the above downlight fixtures.


A method of displaying states of a peripheral data storage system (PDSS) comprising a data storage device, a data storage system controller, a user-actuated signaling subsystem, a user display subsystem adapted to display the states, and a peripheral data storage controller host interface adapted for communication with a host system. The method includes determining a state of the PDSS; displaying a first display state via the user display subsystem if the PDSS is in an idle state; displaying a second display state via the user display subsystem if the PDSS is in a state corresponding to receiving a signal from the user-actuated signaling subsystem; displaying a third display state via the user display subsystem if the PDSS is in a dynamically active state; and displaying a fourth display state via the user display subsystem if the PDSS is in an off state.

External peripheral data storage systems such as external disk drives and card readers are standalone units that are commonly mounted to and communicate with a host computer, generally via an external cable such as a universal serial bus (USB) cable or Firewire™ cable.
It is desirable to provide users of peripheral data storage system with some form of display which notifies the users of the status of the peripheral data storage system and provides reassurance that the peripheral data storage system is operational. More recently, these peripheral data storage systems have become more complicated due to added functions and backup options. In today's competitive market, however, complex displays can add to the overall cost of the peripheral data storage system while also being confusing to the user.
Accordingly, what is needed is a more cost-effective method for the notifying the users of the status of the peripheral data storage system.

Peripheral data storage system with multi-state user display


A method and system provide for depositing a TCO, transparent conductive oxide, film in one chamber of a manufacturing tool then irradiating the TCO film with light energy in another chamber of the same tool. The TCO film is used in a solar cell and formed on a solar cell substrate in some embodiments. The method includes irradiating the TCO film for a time and energy to reduce resistance of the TCO film without reducing transmittance. One or multiple light sources are used in the light irradiation chamber. Light in the infrared range, visible light range and ultraviolet light range are used either individually or in combination.

Solar cells are photovoltaic components for direct generation of electrical current from sunlight. Due to the growing demand for clean sources of energy, the manufacture of solar cells has expanded dramatically in recent years and continues to expand. Transparent conductive oxide, TCO, films are commonly used in solar cells due to their versatility as transparent coatings and also as electrodes. As such, the TCO films have a high transmittance and a low resistivity to serve their multiple purposes. Previous methods and techniques for attempting to optimize both transmittance and resistivity without introducing contamination or incurring severe cost increases, have not been wholly successful. In many cases, reducing resistance by adding dopants causes an undesirable decrease in transmittance.
One approach is to provide a metallic grid on the surface of the solar cell to decrease resistivity, but this comes at the expense of transmittance because the metal used in such grids is not transparent. The lower transmittance decreases the amount of electricity generated from sunlight, which is directly proportional to the solar cell area available for sunlight absorption. The dopants that have been tried as additives to the TCO to decrease resistance typically degrade the transmittance of the TCO especially in the long wavelength region.
Other attempts to optimize the TCO film effectiveness, i.e. minimizing resistance while maximizing transmittance, have also not been fully successful.
There is therefore a need in the art that addresses the conventional shortcomings and limitations of present methods and techniques and provides transparent conductive oxide films with suitably low resistance and high transmittance.

Method and apparatus for resistivity and transmittance optimization in TCO solar cell films


The present invention relates to an immunoassay apparatus and a method thereof. The immunoassay apparatus including a cartridge 13 in which a tube for T tip 9, a reaction tube 11, a tube for washing 3, and a tube for signal measurement 5 are integrally coupled or individually configured; a T tip 7 and a magnetic rod 31 used for performing reaction and washing processes while moving large magnetic particles m, capture materials, signal materials, and analyte materials with magnetic force by entering successively a plurality of tubes 3 and 5; a cartridge holder 15 in which the cartridge 13 is seated; and a heating member 17 that generates heat by being disposed at a region in which the reaction tube 11 is seated in the cartridge holder 15; is configured in a state where each of the different shapes of magnetic particles is bound with materials.

Recently, as a human genome project is completed and a post genome era arrives, a large amount of micro information is produced, which is difficult to process quickly in a related laboratory analysis system.
According to such trend, biological detection systems for the identification of life phenomena and for the development and diagnosis of new drugs are developed in a form of point-of-care testing to analyze samples quickly and accurately in a small amount.
Since most of the biochemical samples to be analyzed are in solution, a technology capable of operating automatically and quickly sample reaction-specific cartridges and such cartridges in order to be able to inspect liquid samples on-site and see results, is the most important factor.
A cartridge structure and an automatic inspection system are the elements that enable this inspection, and the core technologies that are the basis for the commercialization of a field inspection technology.
The field inspection technology is a system that comprehensively implements chemical and biological experiments and analyses that undergo a plurality of experimental steps and reactions on one cartridge existing on one bench. This field inspection system is configured with a sampling region, inspection reaction, cleaning, a detector, and a controller for controlling them.
Implementation of the field inspection system capable of quickly performing analysis on rapidly increasing bioinformation may be effectively accomplished by binding with appropriate bioassay methods.
A method for analyzing biomolecules includes immunoassay, DNA hybridization, and receptor-based analysis. A detection method for analyzing these biomolecules is widely used not only in a laboratory but also in medical diagnosis and drug development.
An immunoassay method as an analysis technology using antigen-antibody binding reaction includes various forms depending on test principle, and DNA hybridization analysis uses complementary binding between probe DNA and target DNA.
The receptor-based assay is also an analysis method using binding capacity between a specific molecule and its receptor. As described above, the selective binding ability on detection molecules of the antibody, DNA, RNA, and molecular receptors capable of specific binding may be used to detect various biomolecules.
Since a binding process of these biomolecules cannot be directly observed, a labeling material capable of generating a measurable signal is used.
In general, fluorescent materials, radioactive materials, enzymes, magnetic particles or the like are used as the labeling material. In such a measurement method, it is important to generate a high sensitivity signal so that a very small amount of detection molecules may be recognized.
In particular, recently, by the development of synthetic chemistry and life science, target materials to be analyzed are diversified in fields of new drug development, diagnosis, and the like. In addition, since these target materials are very expensive and not easily available, the need for cost reduction through trace analysis is increasing. As one of detection methods for ensuring high sensitivity signal generation, various methods using the magnetic particles are reported.
However, the analysis methods of the related art have difficulty in effectively extracting or discharging the labeling materials such as magnetic particles in wells.
In addition, the related analysis methods have a problem in that only one magnetic particle may be inspected at a time, which takes a long time and makes the inspection complicated.

Automated immunoassay device and method using large magnetic particle complex


Waste in a black or gray water holding tank is treated by an oxygen activated biocide by the addition of tetra acetyl ethylene diamine (TAED) and a peroxygen compound. Hydrogen peroxide and/or peracetic acid are released over a period of time and thus maintained in the wastewater solution. Peracetic acid under controlled release conditions dissipates prior to the wastewater being deposited in a wastewater treatment plant.

1. Field of the Invention
The present invention relates to a method and apparatus for the timed, controlled release of oxygen activated biocide into holding tanks for RV's, boats and the like. Specifically, the present invention relates to the controlled release of hydrogen peroxide, TAED, surfactants, dyes, enzymes and binders into a system, such as a black or gray water holding tank, on a recreational vehicle, boat, airplane or the like that maintains biocidal activity for a predetermined length of time.
2. Prior Art
Many recreational vehicles have wastewater holding tanks. Recreational vehicles ("RV"), buses, boats including cruise liners and airplanes all store a significant amount of waste in a black or gray water holding tank that is later deposited at a waste treatment center such as a septic tank or a sewage treatment facility. The waste inside the holding tanks is typically stored for a 3-5 day period and up to a 10-14 day period. Wastewater treatment facilities, including septic tanks and lagoon systems for small developments, employ biological processes to stabilize and remove pollutants from wastewater streams. These biological processes perform best when they approach steady-state conditions which include constant waste stream temperature, flow rate, and composition. In reality, each of these variables tend to fluctuate seasonally and weekly as a result of typical recreation use patterns.
Holding tanks on boats and RVs are used to keep all sanitary wastes onboard when a sewer or water treatment system is unavailable. Since little or no carriage water is used, as is in typical domestic sanitary waste streams, holding tank wastewater is far more concentrated than typical domestic wastewater. Additives are introduced into these tanks, primarily to control odors. There are a wide variety of such additives used, the most common of which are formaldehyde-based compounds. Other types include those based on quaternary ammonium compounds ("quats," which often impart a pine scent) and enzyme formulations. In general, while these additives work well to control odors aboard the boat or RV, they complicate the treatment and disposal of the resulting mixture.
Generally, treatment facilities are designed on the basis of two primary parameters: hydraulic capacity (gallons per day) and organic strength (biochemical oxygen demand, or BOD) of the waste stream. Usually it is much easier to predict the hydraulic capacity needed for a treatment facility than the organic strength of the wastewater that it will receive. Highly concentrated holding tank wastes, containing variable amounts and types of chemical additives, make proper design of treatment facilities difficult. Further, the typical mode of introducing wastes into the receiving station—dumping—is not conducive to the steady-state flow needed for optimal biological treatment.
These holding tanks are very susceptible to proliferation of a wide variety of microorganisms including pathogens and the odors generated by their activity. Therefore, it is desirable to provide a means for minimizing the growth of microorganisms, thus, minimizing or reducing odors, while in a holding tank. However, many wastewater treatment centers utilize microorganisms to aide in the elimination of contaminants from wastewater before it is returned to the environment. Because of this, the wastewater in the holding tank should not contain biocides or disinfectants that sustain activity for extended periods of time that might harm or kill the microorganisms used in a wastewater treatment system.
Existing products used to disinfect wastewater in a holding tank fall within two categories. The first is products having formaldehyde. Second, there are a group of products that use quaternary amine compounds. These products and combinations thereof are known in the art. Both types of products are harmful to the microorganisms utilized in wastewater treatment systems. Further, formaldehyde and quaternary amines degrade slowly. Because of this, they are difficult to remove from the wastewater before treating it. Additionally, it is not desirable and in some cases not permitted to allow formaldehydes or quaternary amines to enter septic tanks which lead into the ground water and soil.
Some of the existing products contain chemicals which may also adversely impact the septic systems that receive your holding tank contents and, as a result, may pollute water resources. These chemicals and their by-products can kill the good bacteria in septic systems and may contribute to the discharge of dangerous, contaminated, health-threatening effluent to the soil surface or into groundwater or nearby surface waters.
Many RV facilities throughout the country rely on onsite septic systems to treat sewage and septic systems are particularly vulnerable to chemical contamination.
The present invention proposes the use of slow release of oxygen-activated biocide. The biocide stops functioning once the wastewater is later deposited in a septic tank or wastewater system.
It is, therefore, desirable to provide a method for treating wastewater in a black or gray water holding tank to kill substantially all microorganisms within it while in the holding tank without the resulting wastewater composition having a deleterious effect on septic tanks or sewage treatment plants into which it is later deposited.

Controlled production and release of oxygen activated biocide into holding tanks for RV's, boats and the like