A method of forming a more satisfactory inorganic compound solid (ferroelectric film or the like) out of organic compound materials containing metal elements by annealing at a relatively low temperature. In order to form a ferroelectric film, a solution of organic compound materials containing metal elements is coated over a semiconductor substrate (S41) and dried (S42), after which precalcining is carried out (S43). After this process is repeated until a predetermined film thickness is achieved, organic substance removing treatment is carried out (S45). The organic substance removing treatment is carried out by, for example, heat treatment (approximately at 550xc2x0 C.) in a low-pressure atmosphere (approximately at 50 Torr). Post calcining is carried out to inorganic compound materials obtained by the organic substance removing treatment (S46). The post calcining is carried out at a temperature of approximately 550xc2x0 C., for example, whereby the inorganic compound materials are crystallized.

The present invention relates to a method of forming a solid of a ferroelectric or a high dielectric material represented by a ferroelectric thin film employed in a semiconductor device, such as a ferroelectric memory. The present invention also relates to a method of manufacturing a semiconductor device, such as a ferroelectric memory.
A ferroelectric memory is a non-volatile storage device employing a ferroelectric film as a charge holding capacitor, and excels in high speed, low power consumption, high integration and rewriting resistance characteristics. A polarization induced by applying an electric field to the ferroelectric film remains after the electric field is lost. This makes it possible to achieve a non-volatile storage function.
FIG. 16 is a cross section showing a cell structure of the ferroelectric memory. A semiconductor substrate 1 is provided with an element forming region on its principal surface, which is isolated by a field oxide film 2, and impurity diffusion layers 3 and 4 spaced apart from each other are formed therein while a gate electrode 6 is formed on the principal surface of the semiconductor substrate 1 in the spacing between the impurity diffusion layers 3 and 4 by interposing a gate insulation film 5. In this manner, a transistor TR is formed.
The gate electrode 6 is coated by a first interlayer insulation film 7, over which a capacitor structure C such that sandwiches a ferroelectric film 10 between a lower electrode 11 and an upper electrode 12 is provided.
The upper electrode 12 is coated by a second interlayer insulation film 8. A first aluminum wire 9 formed on the second interlayer insulation film 8 is brought into contact with the upper electrode 12 and impurity diffusion layer 4 through contact holes 14 and 15, respectively, thereby electrically connecting the upper electrode 12 and impurity diffusion layer 4.
In the ferroelectric memory of this cell structure, the impurity diffusion layer 3 forms a bit line, and the gate electrode 6 and lower electrode 11 form a word line and a plate line, respectively. Hence, by applying an adequate writing voltage across the bit line (impurity diffusion layer 3) and plate line (lower electrode 11) while applying a selective voltage to the word line (gate electrode 6) so as to allow conduction in the transistor TR, an electric field can be applied to the ferroelectric film 10. Consequently, a polarization can be induced in the ferroelectric film 10 in an amount corresponding to the direction and intensity of the applied electric field.
At the time of reading, an adequate selective voltage is applied to the word line (gate electrode 6) so as to allow conduction in the transistor TR, while applying an adequate reading voltage to the plate line (lower electrode 11). A potential appearing in the bit line (impurity diffusion layer 3) at this point takes either one of two different potentials depending on the direction of the polarization in the ferroelectric film 10. Based on the foregoing, it is possible to check whether the cell is in the xe2x80x9c1xe2x80x9d state or xe2x80x9c0xe2x80x9d state.
In case that a multi-layer wiring is necessary as is shown in FIG. 16, the first aluminum wire 9 is further coated by a third interlayer insulation film 16. Then, a second aluminum wire 17 is additionally formed on the third interlayer insulation film 16, and connected to the first aluminum wire 9 through a contact hole 18. Further, the second aluminum wire 17 is coated by a protection film 19.
Generally, complex oxide ferroelectrics represented by those based on PZT (Pb(Zr,Ti)O3) and those based on SBT (SrBi2Ta2O9) are generally used as the materials of the ferroelectric film. Thin films of these ferroelectrics are formed by, for example, the sol-gel method. The sol-gel method is defined as a method of obtaining a necessary film by coating a liquid (sol) of a raw material over a substrate followed by calcining by means of annealing. In the sol-gel method of PZT, for example, a solution of organic compounds containing metal elements, that is, Pb(CH3COO)2.3H2O, Zr(nxe2x80x94OC4H9)4, and Ti(ixe2x80x94OC3H7)4, in a solvent of 2-methoxy ethanol is used as a starting material. The organic compound solution is spin-coated over the substrate and dried at 150xc2x0 C. to 180xc2x0 C., after which precalcining is carried out for 30 minutes at 400xc2x0 C. in a drying air atmosphere. This process is repeated until a predetermined film thickness is achieved, and finally, annealing at 600xc2x0 C. to 700xc2x0 C. is carried out to crystallize the film entirely.
However, crystallization at such high temperatures deteriorates element characteristics of the transistor TR formed beforehand, besides, mutual-diffusion of film materials at the interfaces between the ferroelectric film 10 and the upper and lower electrodes 11 and 12 causes characteristics deterioration of the ferroelectric film 10 itself. For this reason, a ferroelectric memory with satisfactory characteristics is not necessarily achieved.
The reason why the crystallization at such high temperatures is necessary is because the pre-crystallized film includes residual organic substances. Although the precalcining at a temperature of approximately 400xc2x0 C. can remove the organic substances to some extent, annealing at a temperature exceeding 700xc2x0 C. is necessary in order to remove the organic substances from the film in a satisfactory manner. Such a high temperature, however, causes crystallization of the film materials, thereby causing not only a loss of the purpose of the precalcining, but also more serious damages to the transistor TR formed on the semiconductor substrate 1.
Therefore, there is no conventional method of forming a ferroelectric film that has been crystallized satisfactorily by annealing at low temperatures, which makes it impossible to provide a ferroelectric memory with satisfactory characteristics.
On the other hand, because the complex oxide ferroelectrics represented by those based on PZT (Pb(Zr,Ti)O3) and those based on SBT (SrBi2Ta2O9) are oxides, they are vulnerable to a reduction atmosphere. Hence, if they undergo an interlayer insulation film forming process that uses SiH4, a H2 sintering process aiming at stabilizing the Pxe2x80x94N junction or improving ohmic characteristics at a contact, etc., the capacitor characteristics may deteriorate.
To be more specific, in case of forming the cell structure shown in FIG. 16, because the second and third interlayer insulation films 8 and 16 and the protection film 19 are formed after the ferroelectric film 10 is formed, it is unavoidable for the ferroelectric film 10 to be exposed in a reduction atmosphere.
In addition, because the ferroelectrics also have the piezoelectric characteristics, they are quite sensitive to stress applied from the interlayer insulation film or protection film, thereby possibly causing biased characteristics.
Hence, the ferroelectric film 10 is under the stress applied from the upper electrode 12, second and third interlayer insulation films a and 16, first and second aluminum wires 9 and 17, and protection layer 19, all of which being formed in the steps carried out after the ferroelectric film 10 is formed, and for this reason, capacitor characteristics as designed may not be necessarily achieved.
Further, in the steps carried out after the ferroelectric film 10 is formed, etching is indispensable to pattern the upper electrode 12, first and second aluminum wires 9 and 17, etc. However, this etching causes damages to the ferroelectric film 10, which is one of the factors that deteriorate the capacitor characteristics of the ferroelectric film 10.
It has been known that the characteristics deterioration of the ferroelectric film 10 as discussed above is restorable by annealing at 550xc2x0 C. to 600xc2x0 C. in an oxygen atmosphere. However, annealing at such high temperatures not only causes characteristics deterioration of the transistor TR, but also melts the aluminum wires 9 and 17. Therefore, it is impossible to apply annealing at or above 400xc2x0 C. once the aluminum wire 9 is formed.
As has been discussed, as to the ferroelectric film 10 employed as a capacitor film of the ferroelectric memory, there is virtually no means to restore the characteristic deterioration, and for this reason, a ferroelectric memory employing a ferroelectric film with satisfactory characteristics has not been necessarily achieved.
A first object of the present invention is to provide a method of forming a solid of a ferroelectric or a high dielectric material out of organic compound materials containing metal elements, by which a satisfactory solid of a ferroelectric or a high dielectric material can be formed by annealing at a relatively low temperature.
Also, a second object of the present invention is to provide a method of manufacturing a semiconductor device, by which a satisfactory functional thin film can be formed on a semiconductor substrate by annealing at a relatively low temperature, thereby making it possible to achieve a semiconductor device with satisfactory characteristics.
A third object of the present invention is to provide a method of manufacturing a semiconductor device, by which characteristics deterioration of a functional thin film can be restored in a satisfactory manner, thereby making it possible to manufacture a semiconductor device with excellent characteristics.
Also, a more concrete object of the present invention is to provide a method of manufacturing a semiconductor device, by which characteristics deterioration of a functional thin film can be restored by annealing at a relatively low temperature, thereby making it possible to restore characteristics deterioration of the functional thin film in a satisfactory manner.
A further concrete object of the present invention is to provide a method of manufacturing a semiconductor device capable of restoring characteristics deterioration of a ferroelectric film serving as a functional thin film.
The present invention provides a method of forming a solid of a ferroelectric or a high dielectric material by calcining organic compounds containing metal elements, comprising: a step of forming a film by coating a solution of organic compound material containing a metal element over a substrate; an organic substance removing step of removing organic substances from said film by applying organic substance removing treatment that uses means other than heat to organic compound materials containing metal elements, thereby obtaining inorganic compound material; and a crystallizing step of calcining to crystallize the inorganic compound material obtained in the organic substance removing step, thereby obtaining a solid of a ferroelectric or a high dielectric material.
According to this method, by using means other than heat, the organic substances that will become crystallization-inhibiting factors can be fully removed. Moreover, because calcining for crystallization is carried out after the organic substances have been removed, it is possible to crystallize the inorganic compound material by calcining at a relatively low temperature, thereby obtaining a solid of a ferroelectric or a high dielectric material. Consequently, mutual-diffusion of material of the solid of a ferroelectric or a high dielectric material and any other solid adjacent to the same can be prevented, and if there is a solid portion to be formed as an integral part of the solid of a ferroelectric or a high dielectric material, a thermal effect on that solid portion can be suppressed.
In other words, it is preferable that the crystallizing step is carried out at a temperature lower than a temperature, at or above which material of the solid of a ferroelectric or a high dielectric material and any other solid adjacent to the same start to diffuse each other. Likewise, it is preferable that the crystallizing step is carried out at or below a certain temperature predetermined so as to prevent a thermal effect to a solid portion to be formed as an integral part of the solid of a ferroelectric or a high dielectric material.
Said step of forming a film may include a step of performing precalcining after said solution coated on said substrate is dried.
It is preferable that the organic substance removing step includes a depressurizing step of placing the organic compound material in a low-pressure atmosphere. Accordingly, because the organic compound material is placed in a low-pressure atmosphere, evaporation of the organic substances is accelerated. As a result, the organic substances can be removed efficiently.
Also, it is preferable that heat treatment is carried out in parallel with the depressurizing step at a temperature such that does not cause crystallization. Also, it is preferable that the heat treatment in this case is carried out at a temperature lower than a temperature, at or above which materials of the organic compound material and any other solid adjacent to the same start to diffuse with each other. Likewise, it is preferable to carry out the heating treatment at a certain temperature predetermined so as to prevent a thermal effect to a solid portion to be treated together with the organic compound materials.
It is preferable that the crystallizing step is carried out after the depressurizing step. In this case, because the crystallizing step is carried out after the organic substances in the organic compound material are removed in a reliable manner by the depressurizing step, crystallization of the inorganic compound material can proceed in a satisfactory manner.
For example, the organic substance removing step including the depressurizing step, and the crystallizing step can be carried out by different treatment systems. More specifically, for example, the organic substance removing step may be carried out by a lamp heating device having a low-pressure treatment chamber, and the crystallizing step may be carried out by a heating furnace.
The depressurizing step and crystallizing step may be carried out almost simultaneously by calcining the organic compound materials in a low-pressure atmosphere.
In other words, the organic substance removing treatment and crystallization are carried out by reducing an internal pressure of the chamber of the treatment system and heating the organic compound material within the chamber. In this case, the crystallization is inhibited while residual organic substances are present in the material, and crystallization starts after the organic substances are removed and inorganic compound material is obtained. Therefore, the inorganic compound solid can be obtained by calcining at a relatively low temperature.
The advantages of this method are that two steps can be carried out successively by a single treatment system, which makes it possible to simplify the process sequence, and that the cost can be saved.
It is preferable that the organic substance removing step includes a step of giving energy other than heat to the organic compound material.
By giving energy other than heat to the organic compound material, it is possible to remove the organic substances in the organic compound material. Hence, the organic substances can be removed in a satisfactory manner without heating the organic compound material at high temperatures, and therefore, it is possible to prevent mutual-diffusion of materials of the solid of a ferroelectric or a high dielectric material and any other solid adjacent to the same, and a thermal effect to a solid portion to be formed as an integral part of the solid of a ferroelectric or a high dielectric material.
It should be appreciated, however, that thermal energy can be given to the organic compound material together with energy other than heat to the extent that the mutual-diffusion of material and thermal effect to the solid portion are the least.
The step of giving energy other than heat may include an electromagnetic wave supplying step of supplying electromagnetic waves to the organic compound material.
Examples of the electromagnetic waves include UV rays, microwaves, etc.
Besides the electromagnetic waves, the organic substance removing treatment can be carried out by giving energy to the organic compound material by activated particles, such as plasma.
Also, the step of giving energy other than heat may include a step of treating the organic compound material with activated oxygen particles.
Examples of the activated oxygen particles include ozone (O3), oxygen radicals, oxygen ions (O++, O+), etc.
Bringing the organic compound material into contact with the activated oxygen particles makes it possible to give energy to the organic substances in the material, thereby achieving the organic substance removing treatment.
It is more effective when this treatment is carried out together with heat treatment or annealing to the organic compound materials. It is preferable that the annealing in this case is carried out at a temperature such that does not cause crystallization of the organic compound materials. Also, it is preferable that the annealing is carried out at a temperature such that does not cause mutual-diffusion of materials between the inorganic compound solid and any other solid adjacent to the same. Further, in case that the solid of a ferroelectric or a high dielectric material is formed together with another solid portion into one body, it is preferable that the annealing is carried out at a temperature such that a thermal effect given to the solid portion is the least.
Examples of the ferroelectric include complex oxides represented by PZT (Pb(Zr,Ti)O3) and SBT (SrBi2Ta2O9), etc. A method of manufacturing a semiconductor device of the present invention is characterized by comprising a step of forming, on a semiconductor substrate, a functional thin film made of the solid of a ferroelectric or a high dielectric material formed by the foregoing methods. The functional thin film may be a capacitor film, and the capacitor film may be made of a ferroelectric.
According to this invention, because the functional thin film can be formed by a process at a relatively low temperature, mutual-diffusion of materials between the films and a thermal effect to a functional element formed on the semiconductor substrate can be prevented, thereby making it possible to achieve a semiconductor device with satisfactory characteristics.
In other words, it is preferable that the functional thin film forming step is carried out at a temperature such that does not cause diffusion of materials at the interface of the films, and in case that the functional element is formed on the semiconductor substrate, at a temperature such that does not deteriorate the characteristics of the functional element.
It is preferable that this method includes an element forming step of forming the functional element on the semiconductor substrate before the functional thin film forming step.
In this invention, because the functional thin film can be formed by annealing at a low temperature, the characteristics of the functional element formed before the functional thin film will not be deteriorated.
It is preferable that the crystallizing step is carried out at or below a certain temperature predetermined so as not to deteriorate the characteristics of the functional element.
Consequently, deterioration of the characteristics of the functional element can be prevented in a reliable manner, thereby making it possible to achieve a semiconductor device with satisfactory characteristics.
Examples of the functional element include a transistor, such as a field effect transistor, a capacitor, a resistor, etc.
It is preferable that the crystallizing step is carried out at a predetermined temperature lower than a temperature, at or above which mutual-diffusion of materials occurs between the functional thin film and a solid adjacent to the same.
Consequently, mutual-diffusion of materials between the functional thin film and a solid adjacent to the same (other thin films or the like) can be prevented in a reliable manner, thereby making it possible to achieve a semiconductor device with satisfactory characteristics.
In case that the functional thin film is a ferroelectric thin film, it is possible to fabricate a ferroelectric storage device employing the ferroelectric thin film as a charge holding film.
According to this invention, because a ferroelectric thin film satisfactorily crystallized by annealing at a relatively low temperature can be employed as the charge holding film, a satisfactory ferroelectric storage device can be achieved. In particular, in case that a writable non-volatile storage device is realized by exploiting the polarization holding characteristics of the ferroelectrics, significant improvements are achieved in terms of inversion polarization characteristics, writable number of times, low voltage driving, etc.
Another aspect of the present invention relates to a method of manufacturing a semiconductor device comprising: a step of forming a functional thin film on a semiconductor substrate; and
a restoring step of restoring characteristics deterioration of the functional thin film caused by influences during steps carried out after the functional thin film is formed, which method being characterized in that the restoring step includes: a treatment step of giving energy other than heat to the functional thin film; and a heat treatment or an annealing step of giving thermal energy to the functional thin film.
The treatment step of giving energy other than heat to the functional thin film and annealing step in the restoring step may be carried out in such a manner that the former can be carried out before the latter or vice versa. However, it is preferable to carry out the both steps simultaneously.
According to the present invention, by using energy other than heat and thermal energy together, the characteristics deterioration of the functional thin film is restored. For this reason, only a small amount of thermal energy has to be given to the semiconductor substrate in the restoring step. Consequently, a thermal effect to the portions other than the functional thin film is lessened. On the other hand, the functional thin film can be supplied with sufficient energy as both the energy other than heat and thermal energy are given. As a result, the functional thin film having undergone the restoring step can have satisfactory characteristics. In other words, characteristics deterioration of the functional thin film can be recovered in a satisfactory manner by annealing at a relatively low temperature.
The functional thin film may be a complex oxide thin film. Examples of complex oxides forming the complex oxide thin film include PZT (Pb(Zr,Ti)O3) and SBT (SrBi2Ta2O9).
The complex oxide film is caused deterioration in characteristics (in particular, capacitor characteristics) when exposed in a reduction atmosphere during an insulation film forming process or a H2 sintering step. Hence, the function restoration by the restoring step discussed above is needed frequently.
The restoring step may further include an oxygen introducing step of introducing an oxidation gas to a surface of the semiconductor substrate having formed thereon the functional thin film.
The oxidation gas is a gas containing oxygen, examples of which including oxygen gas (O2), ozone (O3), Nox, etc.
It is preferable that the oxygen introducing step is carried out simultaneously with non-annealing step (treatment step of giving energy other than heat to the functional thin film), and/or annealing step.
According to this invention, the semiconductor substrate can be placed in an oxygen gas atmosphere during the restoring step of restoring the characteristics of the functional thin film. This promotes oxidation of the functional thin film with deteriorated characteristics due to exposure in a reduction atmosphere, thereby making it possible to restore the characteristics in a satisfactory manner. Hence, the oxygen introducing step is particularly effective when the functional thin film is made of the complex oxides.
The treatment step of giving energy other than heat to the functional thin film may include an oxygen activated particle treatment step of placing the semiconductor substrate having formed thereon the functional thin film in an oxygen activated particle atmosphere.
Examples of the oxygen activated particles include ozone, oxygen radicals, plasma, etc.
By placing the semiconductor substrate in the oxygen activated particle atmosphere, energy can be given to the functional thin film, thereby making it possible to restore the characteristics deterioration of the functional thin film. In particular, when the functional thin film is made of complex oxides, the damages can be restored as the oxygen in the atmosphere is activated.
In this case, it is more preferable that an oxidation gas, such as an oxygen gas, is introduced in the vicinity of the semiconductor substrate, because by so doing, the characteristics of the functional thin film can be restored more effectively.
The treatment step of giving energy other than heat to the functional thin film may include an electromagnetic wave supplying step of supplying an electromagnetic wave to the functional thin film. By supplying the electromagnetic waves to the functional thin film, it is possible to restore the characteristics of the functional thin film with a supply of energy other than heat.
Examples of the electromagnetic waves include UV rays, microwaves, etc.
The functional thin film may be a ferroelectric film. In this case, even when the capacitor characteristics and polarization characteristics of the ferroelectric film are deteriorated during various steps carried out after the ferroelectric film is formed, such characteristics deterioration can be recovered in a satisfactory manner.
The semiconductor device may be a ferroelectric storage device employing the ferroelectric film as a charge holding film.
In this case, because the capacitor characteristics and polarization characteristics of the ferroelectric film can be restored in a satisfactory manner by the restoring step, a storage device (memory) with excellent characteristics can be achieved.
The above method may further include a wiring forming step of forming a wiring on the semiconductor substrate before the restoring step.
In the restoring step of restoring the function of the functional thin film with deteriorated characteristics, both thermal energy and energy other than heat are used, and therefore, the characteristics can be recovered at a relatively low temperature. As a result, the characteristics of the functional thin film can be restored without giving damages to the wiring, thereby making it possible to achieve a semiconductor device with satisfactory characteristics.
In other words, by carrying out the annealing step such that a temperature of the semiconductor substrate does not exceed a certain temperature predetermined so as not to deteriorate the wiring, no damage is given to the wiring.
For example, in case that the wire is made of aluminum, it is preferable that the certain temperature is approximately 400xc2x0 C. or below.
The method may further include an element forming step of forming a functional element on the semiconductor substrate before the restoring step.
Examples of the functional element include a transistor, such as a field effect transistor, a capacitor, a resistor, etc.
According to this invention, because the characteristics of the functional thin film can be restored at a relatively low temperature, no damage is given to the functional element that is formed before the restoring step. As a result, a semiconductor device with satisfactory characteristics can be achieved.
In other words, by carrying out the annealing step such that a temperature of the semiconductor substrate does not exceed a certain temperature predetermined so as not to deteriorate the functional element, the characteristics of the functional element will never be deteriorated.
For example, in order to protect the functional element, such as a transistor, formed on the semiconductor substrate, it is preferable that the above certain temperature is approximately 400xc2x0 C. or below.

Method of forming solid of a ferroelectric or high dielectric material and method of manufacturing semiconductor device employing the same


A method for verifying coherence of takeoff parameters of an aircraft from an airport with an available runway length at a moment of takeoff comprises a step of identifying a takeoff runway and a step of validating takeoff parameters with a view to authorizing takeoff of the aircraft if the takeoff distance is shorter than the remaining runway length associated with the identified takeoff runway.

1. Field of the Invention
The present invention relates to a method for verifying the coherence of the takeoff parameters of an aircraft from an airport with an available runway length at the moment of takeoff.
It also relates to an aircraft capable of employing the method according to the invention.
2. Discussion of the Background
In general, the present invention relates to the field of takeoff safety of an aircraft, by verifying the coherence of the takeoff parameters of an aircraft with the available runway length at the moment of takeoff.
In practice, during preparation for takeoff of an aircraft, takeoff parameters must be inserted into the avionic systems interfacing with the pilots, in order to be initialized into the takeoff configuration and to remind the pilots of the piloting information items necessary during a phase of ground roll and a phase of initial climb during takeoff of the aircraft.
A calculation making it possible to optimize the performances of the aircraft during takeoff is performed.
This calculation depends in particular on the state of the aircraft (weight, configuration, etc.), on external conditions (temperature, wind, etc.), on the takeoff runway (length, condition, slope, etc.) and on the policy of the company chartering the aircraft (aircraft configuration, engine thrust, etc.)
This calculation may be performed manually by the pilots, or electronically by the pilots using tools available on board the aircraft, or else electronically by operators situated on the ground, communication means then making it possible for the results of the calculation to be provided to the pilots.
The parameters resulting from this calculation must then be inserted by the pilots into the avionic systems, either manually via an FMS interface (acronym for the English term "Flight Management System") of the MCDU type (acronym for the English term "Multi Purpose Control and Display Unit") or MFD type (acronym for the English term "Multi Function Display"), or by downloading parameters sent by operators situated on the ground.
By means of these information items which may be displayed, and of directions from air traffic and airport controllers, the pilots taxi the aircraft to the takeoff runway with the intention of taking off therefrom.
This takeoff procedure has risk factors at several levels, especially during operations of calculation of the airplane performances for takeoff, during insertion of the parameters into the avionic systems or else during reception of directions from the air traffic and airport controllers.
In general, the entirety of the takeoff phase, from preparation to accomplishment thereof, is a complex phase of aircraft operation, in which a large number of participants are involved.
Operational procedures as well as automatic verifications exist to identify errors in the takeoff parameters of an aircraft.
In particular, French Patent 2894046 describes a method for detecting an error of input of a takeoff parameter into a flight management system.
In that document, a takeoff distance is calculated on the basis of takeoff parameters entered into the flight management system, then is compared with an available takeoff distance stored in memory in the flight management system and corresponding to a planned takeoff runway.
Nevertheless, this planned takeoff runway corresponds to a takeoff runway introduced into the system during flight preparation for the aircraft, and it may not correspond to the actual takeoff runway, especially in the case of airport navigation errors.
From U.S. Pat. No. 6,614,397 there is also known a method for alerting pilots automatically when takeoff of an aircraft is being attempted from an erroneous takeoff runway, when a detected aircraft position does not correspond to a predetermined position, stored in memory, on the planned takeoff runway.
This alert message prompts the pilots then to interrupt the takeoff phase of the aircraft.
Under the conditions of the prior art, alert messages thus may be sent to the pilots, interrupting the takeoff regardless of what actually are the real possibilities for takeoff of the aircraft as a function of its position in the airport.

Process for verifying the coherence between aircraft take-off parameters and an available runway length


An information processing apparatus for performing recognition processing by a recognizer for a position and orientation of a work subject to undergo work by a working unit of a robot arm. The information processing apparatus including an obtaining unit adapted to obtain, for each of a plurality of positions and orientations of the work subject, a position and an orientation of the working unit in which the working unit can perform the work, and a restriction unit adapted to restrict a position and an orientation of the work subject used in the recognition processing by the recognizer to a position and an orientation of the work subject corresponding to the position and the orientation of the working unit that have been obtained by the obtaining unit.

1. Field of the Invention
The present invention relates to an information processing apparatus, control method thereof, and storage medium and, more particularly, to an information processing apparatus which generates a recognizer for recognizing a work subject and estimates the three dimensional positions and orientations of piled work subjects using the generated recognizer in order to perform predetermined work with a robot
2. Description of the Related Art
In the field of recognition using visual information, various researches and developments have been made in regard to a method of estimating the three dimensional position and orientation of a subject. In the field of industrial robots or experimental humanoid robots, three dimensional information is often used for the purpose of random picking and the like, and its necessity is growing. When the orientation of a target subject to be handled has a high degree of freedom, various orientations of the target subject need to be estimated three-dimensionally. As for a target subject with a known shape, its position and orientation are estimated using a three dimensional sensor such as a stereo camera or laser range finder. The correspondence between a three dimensional feature amount obtained from the three dimensional sensor and a three dimensional feature amount regarding a plurality of feature points on a model is obtained. Then, the position and orientation of the subject are calculated using rigid transformation. The position and orientation of a target subject are also estimated using a monocular camera. There is a method of recognizing various orientations as a multi-class classification problem.
Even if a target subject has a three dimensional degree of freedom, it may suffice to recognize only restricted orientations for practical use. In gripping work for a target subject with a robot hand, a detected target subject in an estimated orientation may not be able to be gripped owing to the relative positional relationship with the robot. A task to detect such a target subject is wasteful and can be ignored from the beginning without any problem. Especially in the field of industrial robots, this restriction is often essential. Taking the trouble to detect a target subject in an orientation incapable of gripping increases the memory capacity and prolongs the detection processing time in a recognizer used for detection.
In Japanese Patent No. 2555823, when collating parts based on the contours of images of piled parts, a collation limit value indicating a mismatch range permitted for a collation model in a reference orientation is set based on a tolerance limit angle in a grippable range. This method does not set a high degree of freedom of the orientation, and a target subject is detected by relaxing the collation limit value from one reference orientation to permit variations of the orientation from the reference orientation.
The method disclosed in Japanese Patent No. 2555823 takes account of an orientation range considering grippability, but does not examine a case in which the degree of freedom of the orientation is high. Further, it is difficult to apply this method when the appearance of a target subject greatly changes depending on the orientation.
In consideration of the aforementioned problems, the present invention provides a technique of reducing the memory capacity of a recognizer used in actual work for a target subject with a high degree of freedom of the orientation, and shortening the recognition processing time when detecting a target subject.

Information processing apparatus, control method thereof and storage medium


A feedback information generation method for a solder inspection apparatus includes: receiving an input of information on the number of buffers which are disposed between the solder inspection apparatus and a screen printer for printing solder on printed circuit boards and are configured to support the printed circuit boards to be introduced into the solder inspection apparatus so as to put the printed circuit boards on standby; generating feedback information by using the input information and an inspection result of the printed circuit boards by the solder inspection apparatus; and transmitting the feedback information to the screen printer. Feedback information may be generated in consideration of the number of buffers, thereby preventing the feedback information from being excessively generated as well as ensuring the accuracy of the feedback information.

In general, the process of mounting electronic components on a printed circuit board proceeds in the order of: applying solder onto the pad of a printed circuit board through screen printer equipment; inspecting the solder application state through solder paste inspection (SPI) equipment; and mounting the electronic components through component mounting equipment by using a surface mount technology (SMT).
Here, the screen printer applies the solder onto a pad of the printed circuit board by applying a solder paste in a state that a stencil mask having an opening is arranged on the printed circuit board, wherein the opening is formed in an area corresponding to a position of the pad formed on the printed circuit board.
When printing the solder paste through the screen printer as described above, there is a problem in which an error occurs in the position of the solder that is actually printed because of an alignment error of the stencil mask, a mismatch between the fiducial mark camera coordinate system inside the screen printer and the printed circuit board or the mask correction coordinate system, or the like.
In addition, there is another problem in which the amount of solder printed on the pad position of the printed circuit board is less or more than a reference value, or the like, due to a defect of the stencil mask.
Thus, in order to solve the problems, the screen printer and the solder inspection apparatus are configured to communicate with each other, and the solder inspection apparatus can generate feedback information and transmit the feedback information to the screen printer, wherein the feedback information includes a correction value for correcting the position of solder when the screen printer prints the solder, a check signal for checking the stencil mask of the screen printer, or the like.
However, in a case where a buffer configured to put the printed circuit board to be introduced into the solder inspection apparatus on standby is disposed between the screen printer and the solder inspection apparatus, and the feedback information is generated without considering the buffer, an excessive correction may occur in the screen printer or a check signal requesting the checking of the screen printer may occur too frequently.
Therefore, in the case where one or more buffers are disposed between the screen printer and the solder inspection apparatus and configured to put the printed circuit boards on standby, a method is required to improve the reliability of the feedback information that is generated by the solder inspection apparatus in consideration of the buffers.

Solder inspection apparatus and method of generating feedback information of solder inspection apparatus


Uses of ganaxolone in prophylaxis and treatment of postpartum depression are described. A dose of ganaxolone is administered to a female suffering from postpartum depression or at risk of developing postpartum depression in an amount and at a rate sufficient to alleviate at least one symptom of postpartum depression in the female.

Plasma levels of allopregnanolone, which is a metabolite of progesterone and an endogenous gamma-aminobutyric acid (GABA) receptor modulator, are known to increase throughout pregnancy and then precipitously drop after delivery. Failure of GABAA receptors to adapt to these changes at parturition has been postulated to have a role in triggering postpartum depression.
Postpartum depression (PPD) is a mood disorder observed in an estimated 10-20% of all mothers who give birth. The disorder mirrors symptoms of a major depressive episode (e.g., feelings of extreme sadness, hopelessness, suicidal ideation, anxiety, and fatigue), with the additional criteria that the onset of depression occurs within 4 weeks of childbirth.
Selective serotonin reuptake inhibitors ("SSRIs") and serotonin and norepinephrine reuptake inhibitors (SNRIs) are commonly used off-label to manage postpartum depression. SSRIs are known to increase allopregnanolone, and it has been suggested that this mechanism could explain why SSRIs have shown therapeutic effect in the treatment of postpartum depression. The onset of efficacy for SSRIs ranges from at least 1-2 weeks to months, and response rates remain low.
Brexanolone, a proprietary formulation of the endogenous human hormone allopregnanolone, previously known as Sage-547, is marketed by Sage Therapeutics, Inc. for the treatment of postpartum depression.
Another synthetic analog of allopregnanolone is ganaxolone. The chemical structure of ganaxolone differs from brexanolone by one methyl group:

Ganaxolone has a methyl group at position 3 in addition to the hydroxyl group; brexanolone lacks the methyl group at position 3.
Administration of brexanolone for the treatment of postpartum depression comprises intravenous administration of brexanolone in β-cyclodextrin-based intravenous formulation over 60 hours in three phases: (i) a titration phase for the first 24 hours; (ii) a maintenance phase for the next 28 hours; and (iii) a taper phase for the last 8 hours.
Two dose regimens are used to administer brexanolone—a 60 μg brexanolone dose regimen and a 90 μg brexanolone dose regimen.
The 60 μg brexanolone dose regimen consists of administration of 30 μg/kg/hr brexanolone for the first 4 hours, followed by administration of 60 μg/kg/hr brexanolone for the next 52 hours (5th to 56th hours); followed by administration of 30 μg/kg/hr brexanolone for the next four hours (56th to 60th hours) ("the 60 μg brexanolone dose regimen").
The 90 μg brexanolone dose regimen consists of administration of a dose of 30 μg/kg/hr brexanolone for the first 4 hours, followed by administration of 60 μg/kg/hr brexanolone for the next 20 hours, followed by administration of 90 μg/kg/hr brexanolone for the next 28 hours (24th to 52nd hours); followed by administration of 60 μg/kg/hr brexanolone for the next four hours (52nd to 56th hours), and followed by administration of 30 μg/kg/hr brexanolone for the last four hours (56th to 60th hours) ("the 90 μs brexanolone dose regimen").
The 90 μg brexanolone dose regimen was proposed as the recommended dose regimen for postpartum depression because, by design, the efficacy of the 90 μs brexanolone dose regimen was demonstrated in 3 separate placebo-controlled studies and evaluated in a larger number of patients and over a wider range of postpartum depression severities than the 60 μg brexanolone dose regimen. The 90 μg brexanolone dose regimen did not appear to confer greater risk to safety than the 60 μg brexanolone dose regimen. Since the 90 μg brexanolone dose regimen was deemed to be effective for treatment of postpartum depression, it was not necessary to study higher doses of allopregnanolone.
Intravenous infusion of the 60 μg brexanolone dose regimen and the 90 μg brexanolone dose regimen are both associated with abrupt loss of consciousness, syncope and presyncope. Specifically, about 4% of patients exposed to brexanolone had abrupt loss of consciousness, syncope or presyncope. An abrupt loss of consciousness, syncope and presyncope can be dangerous to the patient (e.g., falls, drowning, etc.) and to the infant (e.g., drops, smothering).

This patent is subject to a terminal disclaimer.

Ganaxolone for use in prophylaxis and treatment of postpartum depression


Injector (1), comprising a housing to which is fixed a hollow needle (17) provided with conveyance means (3,4) for moving an object such as a transponder (22) through said needle (17). Such transponders (22) are inserted in living beings for identification purposes. Metering means (11,12) are provided in the injector (1)in order to permit the introduction of a fluid such as a disinfectant during the insertion of such objects (22). Such means comprise a storage place for fluid (11) which is connected to channel means (8) which open into the movement path of the object (22). In this way fluid is added during the positioning of the object (22).

Such an injector is generally known in the art and is used for, for example, introducing identification means such as transponders into living beings such as pigs. Such transponders can be accommodated in a cartridge, which cartridge is fitted in an injector, and the transponders are moved by means of a push rod out of the cartridge into the hollow needle. With said hollow needle an incision is first made in the skin and the underlying tissue of the animal is exposed, and the transponder is then moved into its end position with the aid of the push rod. The needle is then withdrawn.
Although various proposals have been made for limiting as much as possible the introduction of impurities into the incision in the living being, such as making a U-shaped incision in the skin, the risk of infection still remains. The risk associated with infection is that the transponder will be expelled from the body of the animal through the body's defence mechanisms.
It was therefore proposed in the art that disinfectants should be used during the insertion of the transponder. Such disinfectants can be moved together with the transponder into the living being in question. One possibility is to confine the transponder in a cartridge with an ointment-like material having disinfectant properties. When the transponder is ejected from the cartridge, said ointment will also be conveyed. It was, however, found in experiments that only a limited part of the ointment present in the space of the transponder goes into the skin at the incision. In experiments less than a few per cent was found in the wound itself. The major part of the ointment remains behind in the injector. It was also found that a considerable variation existed in the quantity of disinfectant introduced into the wound. The certainty of the transponders remaining in the body is therefore reduced, and subsequent checking is necessary. Efforts toward the general use of transponders in livestock are thus impeded.
This means that the injector must be made in such a way that it is always ensured that an adequate quantity of disinfectant is introduced into the wound. On the other hand, too much disinfectant must not be introduced into the wound, because this can slow down the encapsulation of the transponder inside the animal, or can have other negative effects.


Wireless telephone communications are processed by first contacting a worldwide wireless access facility which interfaces between the caller and the phone systems to determine a present location of a subscriber. The facility queries the home system requesting a roaming status and number of the subscriber. If the subscriber is roaming, the home network identifies a present serving network for the indicated subscriber from a list maintained of each subscriber's roaming location. The home network queries the present serving system and obtains a temporary local directory number for the subscriber. The home network returns a number to the worldwide wireless facility for reaching the subscriber. The facility uses this number to direct the telephone call to the called party.

1. Field of the Invention
This invention generally relates to wireless communication systems, and more particularly to a wireless telephonic system that determines the location of a subscriber in order to allow direct communication with the subscriber without a preliminary call to the home system.
2. Description of the Related Art
Some wireless telephone systems, including cellular systems operating in the United States, use a "Roamer Access Port" function to allow subscribers to receive incoming calls while roaming. Roaming refers to when a subscriber is in a geographical area not served by a subscriber's home network. According to this function, the subscriber notifies potential callers that he will be roaming and when they want to reach the roaming subscriber they call a "Roamer Access Port" number of a network operating in the current location of the roaming subscriber, i.e., a serving network. They can obtain this number from the subscriber or look it up in a directory. In practice, the caller first dials the "Roamer Access Port" number of the serving network. After receiving a network prompt (e.g., an announcement or a tone), the caller enters a unique Mobile Directory Number (MDN) for the subscriber and waits for the call to be connected. After receiving the MDN, a network controller performs a network-wide or area-wide page for that particular MDN. If the subscriber's phone is powered-on and tuned to one of the paging channels of this network, it will respond with a page response. The controller then assigns a voice/traffic channel for the roaming subscriber's mobile phone and instructs the mobile phone to tune to the assigned voice/traffic channel. The network controller then instructs the mobile phone to alert the subscriber of the incoming call and provides an audible ringing tone to the caller at the same time. When the subscriber answers the call, the controller cuts through the call path and the caller and the subscriber can begin the conversation.
Currently, there are two cellular networks operating in any given city. The cellular subscriber must notify potential callers which network he plans to use for roaming. If the caller does not have this information, he may dial the "Roamer Access Port" number of a network other than the one to which the subscriber's mobile phone is tuned. If the caller knows that there are two networks in a given market, he may look up the "Roamer Access Port" number of the other network and try again. Otherwise, the caller may think that the cellular subscriber has turned off the mobile station or has left that city after receiving the response from the network that the indicated MDN cannot be reached.
One disadvantage of using a Roamer Access Port is that the subscriber must notify callers of his roaming location as well as the time he plans to stay there and the network he will be in. In addition, the callers must obtain the appropriate "Roamer Access Port" number of the network in the cellular subscriber's roaming location.
Other current cellular systems keep track of a subscriber's location by using manual registration/de-registration or automatic registration/de-registration of the mobile phone. Through a manual or automatic registration process the subscriber's home network maintains information on the network currently serving a particular roaming subscriber. Using this type of scheme, callers can reach the subscriber whether he is in his home network or roaming in a serving network.
However, these manual or automatic registration/de-registration systems have several disadvantages. For example, if the subscriber and his home network are based in Massachusetts, then when the caller places the call, it is directed to Massachusetts and the caller must pay for the call from his location to Massachusetts. If the subscriber is not in Massachusetts, but rather is roaming in California, then the home system initiates an additional call to forward the incoming call from Massachusetts to California. The called party must now pay for the phone call from Massachusetts to California.
The extra telephone charges and connections are especially inefficient when the called party is actually located in a zone close to the caller. For example, when the caller is in California, the system first forwards the call to the home network in Massachusetts before routing the call to the called party in California and calling a Massachusetts based party who is currently roaming in California.
Therefore, it is desirable to have a system that does not require a subscriber to inform others in advance where he plans to be roaming or of a roamer access number for a network in that location. It is also desirable to have a system that does not require a call to a subscriber's home system to determine the location of the called party.
The present invention uses and expands on current cellular network systems such as Ames, or GTE's GSM GlobalRoam System which provides an interface between varying worldwide telecommunication standards and forwards received telephone calls to cellular serving sites worldwide. Basic cellular services such as those discussed above will not be elaborated on in this description.

Worldwide wireless subscriber access service

GTE Telecommunications Services Incorporated


A wireless station of the present invention includes: a synchronization unit configured to synchronize with a transmission suspension period of a transmitting station of a wireless system, a measurement unit configured to measure a reception level of a wireless signal of said transmitting station in a transmission period and a reception level in the transmission suspension period, and an interference estimation unit configured to estimate an amount of interference to another wireless system according to the measured reception level in the transmission suspension period and reception level in the transmission period.

Cognitive radio is known as a technology which recognizes the wireless environment of the surroundings and optimizes communication parameters according to the wireless environment. An example of cognitive radio system is where a secondary system (interference giving system) shares a frequency band assigned to a primary system (interference receiving system).
For example, standardization of a wireless regional area network (Wireless Regional Area Network: WRAN) system as a secondary system sharing a frequency band (TV channel) assigned to a TV broadcasting system as a primary system is discussed in IEEE (Institute of Electrical and Electronic Engineers) 802.22 Working Group.
A WRAN system uses spectrum sensing technology to judge a primary system uses a frequency band is used (refer to non-patent literature 1). Here, spectrum sensing indicates reception processing in which a secondary system receives a radio wave of a shared frequency band and which recognizes whether a signal of a primary system exists. A WRAN system as a secondary system needs to check whether a primary system is not communicating in a shared frequency band. In order to check it periodically, a transmission suspension period called a Quiet Period (abbreviated as QP hereafter) is used in the WRAN system, and spectrum sensing is performed within the QP.
FIG. 19 is a figure which illustrates a frame structure of a QP in a WRAN system, in which a QP is inserted in a transmission signal periodically. Also, each QP in a plurality of transmitting stations of the WRAN system is synchronized in the time domain. Spectrum sensing with such a QP makes it possible to sense a signal of a primary system (primary signal) even if it is a weak signal because a WRAN signal (secondary signal) is not transmitted. Accordingly, accuracy of spectrum sensing can be improved.
As mentioned above, in cognitive radio, a secondary system checks whether a primary system in the vicinity is using the frequency band. Therefore, it is necessary to grasp an amount of interference in the secondary system by the use of spectrum sensing, for example, the spectrum sensing using QP mentioned above. On the other hand, it is also important to grasp how much interference is caused (amount of interference) to the primary system by the transmission of the secondary system. That is, when a secondary system shares a frequency band with a primary system, it is necessary for the secondary system to avoid excessive interference to the primary system which exists in the vicinity. It is also necessary for the secondary system not to have an influence on existing services which the primary system provides. An amount of interference to the primary system, for example, can be used for determination of transmission power of the secondary system that is necessary to suppress influence of interference in the primary system within a fixed value.
FIG. 20 is a figure illustrating interference between systems in a general wireless communication system including a primary system and a secondary system. As can be understood from FIG. 20, transmitting station 20 (secondary transmitting station) of a secondary system which performs spectrum sensing suffers interference (suffered interference) by the signal transmitted from transmitting station 10 (primary transmitting station) of a primary system. Also, the signal transmitted from secondary transmitting station 20 causes interference to receiving station 11 (primary receiving station) of the primary system (given interference).
As an example of such technology that grasps an amount of interference to a primary receiving station, technology disclosed in non-patent literature 2 can be mentioned. In non-patent literature 2, the technology which estimates given interference to a primary system is disclosed by specifying a service area of a TV which is a primary system using a TV database and by using propagation loss at a service area border which is estimated based on a propagation model.
Also, as an example of technology in general which grasps an amount of interference, technology disclosed in patent document 1 can be mentioned. In patent document 1, technology which measures interference from a peripheral cell (for example, an adjacent cell) in a cellular system is disclosed. A cell which measures interference from an adjacent cell suspends a signal transmission by installing a space frame (which is a transmission suspension period and corresponds to a QP of a WRAN system) in each of an uplink signal and a downlink signal. The cell measures an amount of suffered interference by the transmission of the adjacent cell in a state that it is not influenced by the transmission of its own cell with the suspension of the signal transmission. Also, an amount of interference from its own cell to the adjacent cell can be measured by using a space frame similarly in the adjacent cell and by the adjacent cell measuring an amount of suffered interference.    Patent document 1: Japanese Patent Application Laid-Open No. 2000-138629    Non-patent literature 1: C. Cordeiro, M. Ghosh, D. Cavalcanti, K. Challapali, "Spectrum sensing for Dynamic Spectrum Access of TV Bands", Proc. IEEE International Symposium on New Frontiers in Dynamic Spectrum Access Network (DySPAN), October 2008.    Non-patent literature 2: D. Gurney, G. Buchwald, L. Ecklund, S. Kuffner, and J. Grosspietsch, "Geo-location database techniques for incumbent protection in the TV white space", Proc. International Conference on Cognitive Radio Oriented Wireless Access Networks and Communications (CrownCom), July 2007.

Wireless station, an interference estimation method, a wireless communication system and a computer program


The seat belt failure warning apparatus is disposed with a buckle switch that detects wearing of a webbing, a rotation sensor that detects a drawing-out amount of the webbing, and a liquid crystal display that switchingly displays a plurality of alarm information. A controller is disposed with a failure determination unit that determines whether the seat belt device has had a failure or not, and a control unit that controls display of the liquid crystal display. When the buckle switch is OFF and drawing-out of the webbing is detected by the rotation sensor after the failure determination unit has determined the seat belt device has had a failure, failure information of the seat belt which indicates that the seat belt device has had a failure as a determination result by the failure determination unit is displayed on the liquid crystal display regardless of a display priority of alarm information.

1. Field of the Invention
The present invention relates to a seat belt failure warning apparatus that informs an occupant of a failure of a seat belt device.
2. Description of Related Art
A seat belt device equipped in a vehicle is known that drives a reel wound by a webbing with a motor. In this seat belt device, the motor is controlled by a controller based on information from various sensors, and drawing-in of the webbing in the event of an emergency, winding up of slack in the webbing, wind-up storing of the webbing, and the like are automatically performed.
In the above-mentioned seat belt device, various behaviors can be precisely controlled by electric control, but in the event a failure occurs in the system, it is necessary to quickly inform the occupant thereof.
Therefore, a seat belt device has been developed which includes a failure determination unit that determines whether the system has had a failure or not, and a failure warning device that informs the occupant of the failure, in the event the failure determination unit determines the system has had a failure (for example, refer to Japanese Unexamined Patent Application Publication No. 2008-247358).


In a memory cell, a transistor with extremely high off-resistance is used as a write transistor; a drain and a source of the write transistor are connected to a write bit line and an input of an inverter, respectively; and a drain and a source of a read transistor are connected to a read bit line and an output of the inverter, respectively. Capacitors may be intentionally disposed to the source of the write transistor. Alternatively, parasitic capacitance may be used. Since the data retention is performed using charge stored on these capacitors, a potential difference between power sources for the inverter can be 0. This eliminates leakage current between the positive and negative electrodes of the inverter, thereby reducing power consumption.

1. Field of the Invention
The present invention relates to a memory device using a semiconductor.
2. Description of the Related Art
A static random access memory (an SRAM) using two inverters for its memory cell operates at high speed, and thus is used to temporarily store programs and/or data either in the CPU or in a part near the CPU. Unlike a dynamic random access memory (a DRAM), the SRAM does not require to be refreshed while storing data, thereby consuming less power in standby mode. For this reason, the SRAM is also used for data storage in a portable device.
FIG. 2A illustrates a conventional SRAM memory cell. The memory cell is connected to two bit lines BL1 and BL2 and one word line WL. The memory cell includes two selection transistors STr1 and STr2 and two inverters INV1 and INV2. The gates of the selection transistors STr1 and STr2 are connected to the word line WL. The drain of the selection transistor STr1 is connected to the bit line BL1, and the drain of the selection transistor STr2 is connected to the bit line BL2.
The source of the selection transistor STr1 is connected to the output of the INV1 and the input of the INV2. The source of the selection transistor STr2 is connected to the output of the INV2 and the input of the INV1. In other words, the output of the inverter INV1 is connected to the input of the inverter INV2, and the output of the inverter INV2 is connected to the input of the inverter INV1. A circuit in which two inverters are connected to each other in this way is called a flip-flop circuit.
Complementary inverters are used as these inverters to achieve low power consumption. In a complementary inverter, the gate of the p-type transistor and the gate of the n-type transistor are connected to each other, serving as the input of the inverter. Moreover, the drain of the p-type transistor and the drain of the n-type transistor are connected to each other, serving as the output of the inverter. Further, the potential of the source of the p-type transistor (the positive electrode of the inverter) is held high (VDD), and the potential of the source of the n-type transistor (the negative electrode of the inverter) is held low (VSS).
The normal characteristics of the complementary inverter are illustrated in FIG. 2B. Here, the threshold voltage of the n-type transistor is denoted by Vth_N, and the threshold voltage of the p-type transistor is denoted as Vth_P. If input potential VIN is between VSS and (VSS+Vth_N), output potential VOUT becomes potential VDD. If input potential VIN is between (VDD−|Vth_P|) and VDD, output potential VOUT becomes potential VSS.
If input potential VIN is between (VSS+Vth_N) and (VDD−|Vth_P|), both the p-type transistor and the n-type transistor are on, and output potential VOUT is determined by the resistance ratio therebetween. Since both the p-type transistor and the n-type transistor are on, relatively high current called flow-through current flows between the positive and negative electrodes of the inverter.
In order to write data into the SRAM memory cell, an appropriate potential is applied to the word line WL to turn on the selection transistors STr1 and STr2 and, while the selection transistors STr1 and STr2 are on, potentials according to the data are applied to the bit lines BL1 and BL2, where the phase of the potentials are opposite each other. For example, potential VDD is applied to the bit line BL1, and potential VSS is applied to the bit line BL2.
Consequently, the output of the inverter INV1 becomes potential VSS, and the output of the inverter INV2 becomes potential VDD. Each of these outputs has the same potential as the bit line connected to the output of the inverter through the selection transistor (STr1 or STr2). This potential is input to the other inverter. Thus, the flip-flop circuit goes into a stable state.
In order to read data, an appropriate potential is applied to the word line WL to turn on the selection transistors STr1 and STr2 and, while these transistors are on, changes in the potentials of the bit lines are monitored. Here, if the on-resistances of the selection transistors STr1 and STr2 are too low, the output potentials of the inverters are affected by the potential of the bit line, so that the flip-flop circuit becomes unstable, which may results in loss of data.
Therefore, the following measures are taken to avoid instability: the potentials of the bit lines are set between VDD and VSS in advance to turn on the selection transistors STr1 and STr2; and/or the on-resistances of the selection transistors STr1 and STr2 are set approximately equal to or higher than or equal to the on-resistances of the transistors forming the inverters.
By the way, in resent years, a reduction in the difference between potential VDD and potential VSS (lower voltage operation) is required to further reduce power consumption. The inverter characteristics shown in FIG. 2B are those obtained when VDD−VSS>Vth_N+|Vth_P|, whereas the inverter characteristics shown by the solid line in FIG. 2C are those obtained when lower voltage operation is achieved, so that VDD−VSS<Vth_N+|Vth_P|.
Here, if input potential VIN is between VSS and (VDD−|Vth_P|), output potential VOUT becomes potential VDD. If input potential VIN is between (VSS+Vth_N) and VDD, output potential VOUT becomes potential VSS.
If input potential VIN is between (VDD−|Vth_P|) and (VSS+Vth_N), both of the p-type and n-type transistors are off, and output potential VOUT is determined by the resistance ratio therebetween. However, since both of them have high resistance, output potential VOUT in this region is extremely unstable and fails to respond in short time.
For example, even if input potential VIN is apparently slightly higher than (VDD−|Vth_P|), output potential VOUT is almost VDD. This is because the resistance of the p-type transistor is relatively lower than that of the n-type transistor, and both of the transistors are in the subthreshold states. In other words, the resistance of the p-type transistor here is several to dozens of times that obtained when input potential VIN is (VDD−|Vth_P|). Therefore, when a load is connected to the output of the inverter, output potential of the inverter may drastically change regardless of the input of the inverter.
For this reason, input potential VIN that produces a stable output of VDD or VSS is limited to the range from VSS to (VDD−|Vth_P|) and the range from (VSS+Vth_N) to VDD. For example, each of these ranges has a width of only 0.2 V in the case where VDD=+0.8 V, VSS=0 V, Vth_P=−0.6 V, and Vth_N=+0.6 V. In contrast, in the case shown in FIG. 2B, since VDD−VSS=1.6 V, each of the ranges has a width of as large as 0.6 V in which output potential VOUT becomes VDD or VSS.
In addition, as a result of the miniaturization of the transistors, statistical fluctuations of impurity concentrations in the channels have became nonnegligible, which poses the problems of threshold voltage variations among the transistors (Non-Patent Document 1). Consequently, characteristics variations among inverters using transistors with a channel length of 0.1 μm or less have been increased. This has further narrowed the range of actually available input potential VIN.
For example, if Vth_P=−0.7 V and Vth_N=+0.7 V, input potential VIN that can be used in a stable state is in the range from 0 V to +0.1 V and in the range from +0.7 V to +0.8 V each of which has a width of only 0.1 V.
If Vth_P=−0.7 V and Vth_N=+0.5 V, input potential VIN that can be used in a stable state is in the range from 0 V to +0.1 V and the range from +0.5 V to +0.8 V which provide a width of 0.4 V in total. However, the ranges have different permissible widths; hence, in the flip-flop circuit using the output of one inverter as the input of the other inverter, substantially permissible input potential VIN is in the range from 0 V to +0.1 V and the range from +0.7 V to +0.8 V each of which has a width of 0.1 V.
The characteristics shown in FIGS. 2B and 2C are those in a steady state; the range of actually available input potential VIN is further narrowed when used for a short period, e.g., that for write or read operation in the memory.
Moreover, the lower voltage operation poses the problem of decreasing the writing or reading speed caused by the increase of on-resistance of the on-state transistor included in the inverter. In order to avoid these problems, a method, for example, of controlling the potential of the power sources for the inverter has been proposed (see Patent Document, 1 for example). In this method, the potential of the power sources for the inverter is changed in accordance with data during the write operation.
In the data retention state, the amount of current flowing through the inverter (current flowing from the positive electrode of the inverter to the negative electrode of the inverter) is determined by the resistance of the transistor in the off-state. In this state, a transistor with a normal threshold voltage has an off-resistance of 1×1013Ω, or more. Hence, the leakage current of one inverter is 1×10−13 A or less. For example, one gigabit memory has as many as two billion or more inverters, resulting in consumption of current of as much as 2×10−4 A.
If threshold voltage variations increase as described above as a result of the miniaturization, the number of the transistors having low off-resistances among those forming the inverters increases. A drop of 0.1 V in threshold voltage reduces the off-resistance by a factor of about 30 and increases the leakage current by a factor of about 30. In addition, short-channel effect raises the subthreshold value of the transistors, which may reduce the off-resistance.
Reducing gate insulator thickness can reduce short channel effect or statistical variations in impurity concentration; however, an excessive reduction in gate insulator thickness may increase leakage current between the gate and the channel.
In other words, a highly integrated SRAM has a higher leakage current per one bit than the conventional one, and high integration causes the SRAM in which one chip has a greater number of memory cells to have a higher leakage current for the data retention. However, no effective method has been proposed to reduce such leakage current of the data retention period.

Semiconductor memory device and driving method thereof

Semiconductor Energy Laboratory Co., Ltd.


The present disclosure relates to a high voltage cooling fan motor unit. For this purpose, the present disclosure includes a motor 100 located inside a high voltage cooling fan motor housing 102; an inverter PCB 200 located on the upper portion of the motor 100; a cover plate 300 for covering the upper surface of the motor housing 102, assembled in the state of facing the inverter PCB 200, and having a groove part 310 formed on the outside upper surface thereof; a cooling fin 400 provided on the outside of the cover plate 300 in the state of facing the groove part 310; and a power conversion unit 500 mounted on the lower surface of a heat sink 50 in the state of facing the inverter PCB 200 via the heat sink 50 mounted on the inside lower surface of the cover plate 300.

In recent years, a hybrid vehicle that uses both fossil fuel and electricity as a driving source, an electric vehicle, or a fuel cell vehicle is in the spotlight according to the low pollution and high fuel efficiency policy due to the problems of depletion of the fossil fuel, environmental pollution, etc., and research for this is being actively performed.
When an engine of the vehicle is cooled by a water cooling type, there is provided a radiator for cooling the cooling water, which is heat-exchanged with high temperature via the engine, by the outside air; the rear of the radiator is provided with a cooling fan for enhancing cooling efficiency by forcibly flowing in the outside air; and a motor for rotating the cooling fan is provided therein.
Generally, an air conditioning device for the vehicle is for cooling or heating a vehicle interior by introducing air outside the vehicle into the vehicle interior, or by heating or cooling it in the process of circulating the air in the vehicle interior, and includes an evaporator for cooling operation, a heater for heating operation, and an air blower for blowing the air cooled or heated by the evaporator and the heater, and the air blower is provided with a motor.
Explaining the motor that is a driving means of the cooling fan, for example, the motor for driving the cooling fan is usually installed adjacent to the engine, such that it is heated by the heat of the engine and thereby can cause damage or malfunction.
In addition, even if it is not heated by receiving heat from the outside, it is heated by the heat generated in the motor itself when being driven for a long time. As a means for preventing this, there is known a technique for installing a heat shield plate, that is, a heat shield on the engine side of a cooling fan motor, thus preventing the heat generated in the engine from being conducted to the cooling fan motor.
Particularly, a high voltage cooling fan motor operated with a high voltage uses an IPM in order to convert DC power into three-phase AC power through switching in an inverter. The IPM is composed of a gate driver and an IGBT, the high voltage cooling fan motor is heated with high temperature due to the switching of the IPM upon driving, and the high temperature heat thus generated is heat-dissipated through a heat sink attached to the IPM and a cover plate molded with a magnesium alloy in the high voltage cooling fan motor.
A conventional high voltage cooling fan motor unit will be described with reference to the drawings.
Referring to FIG. 1, a conventional high voltage cooling fan motor unit 1a has a cover plate 1b provided on the upper surface thereof, and a cooling fin 1c is formed on the cover plate 1b.
The cooling fin 1c has increased the temperature of the inverter and the high voltage cooling fan motor because the number of the cooling fin for heat dissipation was small and a sufficient heat dissipation area was not ensured.
Accordingly, malfunction of the high voltage cooling fan motor or malfunction of the inverter element can be caused, such that the measure for this is needed.


A safety seat configured for installation in a vehicle may include a seat shell that includes a bottom, a back, and first and second sides. The safety seat may also include a seat support configured to extend at least partially adjacent to the first side of the seat shell. A second seat support may extend at least partially adjacent to the second side. The bottom of the safety seat may be located between the seat supports. The safety seat may include attachment straps that are each attached at a first end to a fixed location within the vehicle and attached at a second end to a bend of the seat support that is configured to define an attachment point.

Child safety seats are designed to protect children in vehicles from the effects of impacts or other sudden changes in motion. Child safety seats, commonly referred to simply as car seats, may be used in a variety of vehicles with a variety of seating configurations. It is important for a child safety seat to securely retain an occupant and limit movement of that occupant, particularly during an impact. Another function of a child safety seat is to reduce the impact forces on an occupant of the seat to reduce the likelihood of injury.
Child safety seats are typically configured with a harness that secures the child within the seat and the seat is securely attached to a fixed location within a vehicle, such as with the international standard for attachment points for child safety seats, ISOFIX or in the U.S., LATCH (Lower Anchors and Tethers for Children) attachments. Proper installation of a child safety seat within a vehicle is necessary to achieve the maximum protection afforded by the seat. Improper installation can lead to increased risk of injury in an impact. One of the most dangerous injuries sustained during an impact, particularly for children, are head injuries. Head excursion, or the distance a head travels from a child safety seat, should be minimized to reduce the potential for serious injury from an impact. Additional injuries may also be sustained during an impact due to high forces exerted upon the body, which also are preferably minimized.

Child safety seat with structural support


A housing is inserted from the rear side of a case having an indicating plate. The housing has a plurality of illuminating cells corresponding to the indicating plate, and a plurality of bulb insertion holes communicating with the illuminating cells, respectively. A common electrode plate passes through the vicinities of the bulb insertion holes while a plurality of control electrode plates pass through the vicinities of the bulb insertion holes opposite to the common electrode plate. A plurality of bulbs are inserted in and engaged with the bulb insertion holes and are electrically connected to the common electrode plate. One end of each of a plurality of wires are electrically connected to the control electrode plates.

This invention relates to an indicator lighting unit for an indicator mounted on a vehicle or the like and, in particular, to an indicator lighting unit which is universally adapted to variation of the layout of an indicator and which is easy in exchange of bulbs.
Generally, a dashboard with various instruments often includes various indicators for making various indications by illumination of lamps. For example, a combination meter mounted on a vehicle such as an automobile comprises major instruments such as a speedometer, a tachometer, a fuel gauge, a water temperature gauge, and a trip odometer. In addition to these major instruments, the combination meter further comprises various warning lamps and pilot lamps as indicators of the type described. These indicators are arranged around the above-mentioned major instruments to indicate operating conditions and abnormal conditions of the automobile by illumination of the lamps.
FIG. 1 shows a combination meter 60 for an automobile. A meter case 62 has a display portion 63. Various instruments 66 such as a speedometer are assembled into the display portion 66. In an automatic car, a shift position indicator 61 and other indicators 64 and 65 are assembled also. In order to provide indications, the shift position indicator 61 and the other indicators 64 and 65 are illuminated by illuminating bulbs which are located on the rear side (backlight).
To arrange the illuminating bulbs in the meter case 62, bulb receiving holes are formed in a rear plate of the meter case 62 to receive the illuminating bulbs. The rear plate is generally provided with a printed circuit board on its inner surface to thereby form an electric circuit. Due to presence of the receiving holes, a sufficient circuit space can not be obtained.
In view of the above, the present applicant proposed a display device for a vehicle (Japanese Utility Model Laid Open No. 4-104743) illustrated in FIG. 2. A combination meter 60 has a meter case 62 in which illuminating bulbs are arranged. An illuminating assembly 70 is formed by a combination of the illuminating bulbs, a circuit board, and a lead wire. The illuminating assembly 70 is removably assembled in the meter case 62 through a window 67 formed in the meter case 62.
In the proposed display unit, the illuminating assembly 70 comprises a display portion 71, a lens 72, a multideck lamp cover 73 with a plurality of cells, a printed circuit board 74, a lead wire 75, and illuminating bulbs 76 as illustrated in FIGS. 3 and 4. The printed circuit board 74 is attached to the lamp cover 73 through screws 77. A receiving portion 73a projects from the bottom of the lamp cover 73. A top plate of the lamp cover 73 is provided with a stopper 73b and an opening 73c for outwardly directing the lead wire 75.
The illuminating assembly 70 is inserted in the meter case 62 through the window 67 formed in the top plate of the meter case 62. The illuminating assembly 70 is properly positioned by bring the receiving portion 73a and the stopper 73b into contact with a guide portion 68 of the meter case 62 and an edge of the window 67, respectively.
With this structure, a printed circuit board can be formed on an outer surface 62a of the meter case 62. A sufficient circuit space is obtained for the printed circuit board because it is unnecessary to provide bulb receiving holes or an electric circuit for the illuminating bulbs 76 on the meter case 62. On the other hand, a plurality of electric circuits for the illuminating bulbs 78 can be formed on the printed circuit board 74 attached to the illuminating assembly 70. The lead wire 75 is drawn out through the opening 78c formed on the top plate of lamp cover 78 of the illuminating assembly 70.
With the display device for a vehicle already proposed by the present applicant, the assembly 70 can be removed from the meter case 62 through the window 62 in order to exchange exhausted one or ones of the illuminating bulbs 76. Thus, efficiency in exchange work is excellent.
However, with the above-mentioned display device for a vehicle, the electric circuit has a route passing through a wire harness, a flexible circuit board, and the bulb. Since a configuration of the meter case is different in dependence upon a type of an automobile, it is necessary to change the shape and the number of the flexible circuit boards. As described, the electric circuit extends over a long distance from the wire harness through the flexible circuit board to the bulb. The layout of the indicator often makes it difficult to design the flexible circuit board.


There is provided an image encoding device and an image encoding method, and an image processing device and an image processing method that enable easier bitstream concatenation. A structure according to the present disclosure includes: a setting unit that sets header information related to a hypothetical reference decoder in accordance with information about a position and information about reference, the information about a position and the information about reference being of the current picture of image data to be processed; and an encoding unit that encodes the image data and generates a bitstream containing the encoded data of the image data and the header information set by the setting unit. The present disclosure can be applied to image processing devices or image encoding devices, for example.

In conventional editing of moving images, moving images are concatenated. Since the data size of moving image data is normally large in digital signal processing, moving image data is often encoded (compressed) before; use. Examples of general encoding methods for image data include Moving Picture Experts Group (MPEG), Advanced Video Coding (AVC), and High Efficiency Video Coding (HEVC).
In a case where moving images are concatenated in the above described manner using moving image data encoded as above, one bitstream is generated from more than one bitstream. In such bitstream generation, each bitstream may be decoded and decompressed, and the bitstreams be then concatenated. The moving images after the concatenation may be encoded, to generate one bitstream. In that case, the processing load might become larger, as the data size of the bitstreams becomes larger.
In view of this, smart rendering editing has been developed as a technology for shortening the encoding time and preventing image quality degradation when moving image data encoded as above are clipped, and edited with frame precision (see Patent Document 1 and Patent Document 2, for example).
Meanwhile, in AVC and HEVC, the concept of a hypothetical reference decoder (HRD) is introduced so as to transmit bitstreams without any breaking. An encoder needs to generate bitstreams in such a manner as not to cause the hypothetical reference decoder to break. This also applies in encoding in the above described smart rendering editing.

Image encoding device and method, and image processing device and method for enabling bitstream concatenation


Example embodiments relate to automated contextual-based software localization. In example embodiments, at least one stage computing device may automatically detect at least one screen state related to source code for a software product. The at least one stage computing device may automatically generate at least one reduced properties file, for a first language. Each of the reduced properties files may relate to one of the screen states. The at least one stage computing device may automatically create at least one screen shot. Each of the screen shots may relate to one of the screen states. The at least one stage computing device may automatically create at least one translation package, e.g., one for each screen state. Each translation package may include the screen shot and the reduced properties file associated with particular screen state.

In some scenarios, software products (e.g., applications, operating systems, etc.) may need to be provided in multiple different human languages. In some scenarios, a software product may be originally provided in a first language (e.g., a source language), and may need to be converted to at least one other language (e.g., target languages). For example, this conversion may be performed by identifying language-specific elements (e.g., displayable string elements within the user interface) of a software product and translating the string elements from the source language to the target language. Once all the language-specific elements have been translated the product may be re-compiled to produce a language-specific version of the software product for the target language. The process of converting a software product from one language to another language may be generally referred to as "localization." In some scenarios, a software product may be designed such that it can be adapted to various languages more easily, for example, by providing placeholders that may later be substituted with language-specific elements. In this scenario, the process of adapting such a software product may also be referred to as "localization."

Automated contextual-based software localization