A collection assembly adapted to attract and collect lightning from the atmosphere and channel electrical energy therefrom through a conductor to a storage facility defined by an extremely large coil housed within a congruently configured trench formed in the ground wherein the storage coil is formed of a superconductive material. A first conductive pathway serves to interconnect the collection facility defined by the lightning attracting structure to the storage coil. A second conductive path serves to interconnect the storage coil to a power take-off means which may be standard and conventional power lines directing current to areas of practical application. Both the first and second conductive paths are preferably formed of superconductive material.

1. Field of the Invention
This invention relates to a system for collecting electrical energy from lightning in the surrounding atmosphere and channeling such electrical energy to a storage facility formed of a superconductive material coil of sufficient size, dimension and structural adaptation to store significantly large amounts of electrical energy to be used in a practical sense and wherein such stored electrical energy can be released on demand from the storage coil and used for practical application as desired and needed.
2. Description of the Prior Art
For years man has been attempting to find an effective and inexpensive source of energy which is capable of operating the various energy consuming facilities associated with modern day living, commerce and technology. A prime factor in utilizing energy sources is the protection of the environment through the use of non-polluting energy sources. Nuclear fuel, while gaining increasing acceptance in past years, is currently looked upon as somewhat of a dangerous form of electrical energy due to a recent major accident involving a nuclear generating plant and the common occurrence of plant breakdown and possible leakage of toxins into the surrounding environment.
Man has long acknowledged however the unlimited source of electrical energy which occurs during the creation of Lightning during storms and like or similar atmospheric conditions. Attempts have been made to harness such electrical energy as evidenced by the early 1900, U.S. Pat. Nos. to Pennock, 911,260 and 1,014,719. The Pennock patents are directed to facilities for collecting energy from lightning and transferring such energies to some type of storage facility which is referred to in U.S. Pat. No. 911,260 as storage battery structures. The collection facility in this patent relates to metal conductive material spheres interconnected and/or supported in an upwardly suspended position by one or more lighter than air structures, such as balloons. A conventional conductor of metallic materials serves to define a flow path of electrical energy from the collecting facility down to the storage battery.
Similarly Pennock discloses in his U.S. Pat. No. 1,014,719 a plurality of balloons which may be elongated metallic structures filled with some type of lighter than air gas used to support an electrical grid or the like. Further the conductors utilized in this disclosure are designed to transfer the collected electrical energy to some type of collection or storage facility.
The patent to Arreola, U.S. Pat. No. 4,926,061 is directed to a windmill structure rather than any type of facility that is specifically adapted to collect energy from a lightning source. A generator or some type of electrical energy creating device is driven by the windmill type device shown in certain drawings of this patent. Storage facilities such as battery packs are the initial and preferred embodiment for storing electricity in this invention. However, the inventor does specifically mention that the use of superconductivity for maximum generation of electricity and magnetic shielding is also contemplated.
An additional U.S. Patent to Higashino, U.S. Pat. No. 4,493,014 discloses the use of a superconductive storage apparatus for electrical power. In FIG. 1 of this patent the conventional and or known prior art device is depicted in FIG. 2, by comparison, this patent shows an improvement over the known prior art which is depicted and explained. It is important to note that in the recognized prior art system of FIG. 1 and in the so called improved system of FIG. 2 both systems are connected to what may be generally referred to as a conventional A.C. power source which is interpreted as being a power company or like conventional electrical energy generating facility. Both structures are particularly adapted for the initial storage of electrical energy during "low demand" periods and the return of the stored electrical energy to the system schematically indicated in FIGS. 1 and 2 of this patent once demand increases. It is specifically stated in both systems that the storage facility may be defined by a superconductive structure which is connected to some type of conversion unit wherein the initially supplied electrical energy is an A.C. form and then converted to D.C. form for storage. The patent to a large extent concentrates on the conversion unit per se and means of controlling the flow of electrical energy for purposes of storage and/or resupplying it to the system.
Similarly the patent to Peterson et al, U.S. Pat. No. 4,122,512 discloses a superconductive energy storage facility for power systems. This patent emphasizes that while the storage facility is a superconductive magnet with an auxiliary refrigeration system used in combination therewith to prevent overheating, the initial energy source is a conventional alternating current power system connected to the superconductive magnet. The energy is stored in the magnetic field which is produced by the superconductive magnet. The magnetic energy can be converted into electrical energy and returned to the power system as needed. There is no suggestion of combining the superconductive coil with a collection facility which is specifically adapted to trap, transport and control the energy from a lightning source. More importantly this patent as well as the remaining patents cited herein detail no specific description of a superconductive coil which is large enough to be mounted in a ground supporting area at least the size of a standard football field so that significant quantities of energy can be stored and used as desired and wherein such electrical energy is specifically captured from the atmosphere through the attraction of lightning during conducive atmospheric conditions. With regard to the Pennock patents the use of superconductive materials in practical application to store large amounts of energy was not contemplated or certainly developed to the standpoint of practicality or efficiency. Therefore there would be no suggestion of utilizing superconductive material in the collection facilities of Pennock since they were developed in the early 1900's.

Assembly for the induction of lightning into a superconducting magnetic energy storage system


This invention describes a set of building elements comprising a uniting plate (1) and a base plate (19). The uniting plate (1) comprises two plates (3) defined in a single plane, said two plates (3) are connected in a connection line (9), and a slot (5) is placed at said connection line; said slot (5) may engage with a slot on another uniting plate (1) to obtain uniting plates with their plates (3) in different planes. The base plate (19) being substantially planar having three parallel plates, which is placed in two planes, where the first (117) and third plate (119) is placed in one plane, are arranged on either side of the second plate (121), which is placed in the second plane, and where the two parallel planes define a space between the two planes to obtain one of the plates (3) of the uniting plate (1). The base plate (19) comprises locking means for interacting with one of the plates (3) of the uniting plate (1); said locking means comprises at least two parts, where the at least two parts are at the first and third plate, respectively and where one of the plates (3) of the uniting plate (1) can be placed between the two planes. The set of building elements may be used in areas like toys, furniture and decorative arts to obtain three-dimensional structures.

The human brain is stimulated by creative processes. However, the creative skills differ among persons. During their bringing up, children are stimulated by creative processes and they learn and develop during playing.
Children's fantasy is enormous. One of the games that many children enjoy is the combination of different building elements into different structures like castles, airplanes, cars and so forth in order to play different games developed by their imagination. Multiple systems have been developed in order to create new building elements. By way of example of one popular system, small magnetic sticks and balls are combined into different geometric figures in three-dimensions. However, the disadvantage of this system is a high level of instability, especially for creating sophisticated geometrical structures. Furthermore, the size of the elements may cause a health risk as especially children will tend to put the colourful elements in the mouth.
In another system, building bricks can be used for the creation of three-dimensional structures. The bricks can be combined in various ways to create different types of toys like cars, animals and so forth. However, multiple different types of bricks are needed to create more sophisticated structures. Furthermore, the building bricks are, because of their shape none-flexible and only capable of creating edged structures. Thus, the bricks are stackable and not capable of forming real three-dimensional figures.

Building elements for building three-dimensional structures, and methods for assembling the building elements


A biometric feedback system for providing biometric feedback to a subject while the subject performs a controlled physical movement includes an applied-force-recording interface and at least one controller electrically coupled to the applied-force-recording interface. The at least one controller receives applied force from the subject during the controlled physical movement and the applied-force-recording interface records data related to the applied force. The biometric feedback system also includes a dynamic surface electromyograph (“sEMG”) device that detects muscle tension along at least one muscle group of the subject while the subject performs the controlled physical movement and records data related to the muscle tension. A hub receives and processes data from the applied-force-recording interface and the dynamic sEMG device. A visual display displays the processed data from the hub.

Many individuals aspire to improve performance of physical movements (e.g., playing musical instruments, playing sports, engaging in recreational activities, performing tasks, performing chores, or the like). Such individuals may range in level of ability from people with severe physical or neurological disorders or conditions to elite professional athletes or musicians. Diagnosing deficiencies of physical movements can be difficult. It can also be difficult for a third person to determine how to provide meaningful feedback to an individual regarding his or her performance of the physical movement. Existing techniques for providing feedback to individuals regarding deficiencies of physical movements may not be adequate due to one or more of lack of accuracy or excessive financial costs.

Systems and methods for providing biometric related to performance of a physical movement


A power conversion apparatus includes a main circuit with switches, and performs power conversion to generate power to a three-phase AC load from a three- or single-phase AC power supply. Some of the switches are configured, using a bidirectional switch including a normally-on device that is turned OFF when a gate circuit is provided with a positive or negative voltage, and a normally-off device that is turned ON when the gate circuit is provided with a positive or negative voltage, to provide only a specific unidirectional current flow when the gate circuit is not activated, and when the gate circuit is activated, provide and control a bidirectional current flow to direct only in an arbitrary unidirectional way. By providing the power conversion apparatus with a capability of directing back, to a load (motor), any power coming therefrom, the conversion apparatus requires no direct-current link capacitor and a diode clamping circuit.

The power consumption of motors has been increased in homes, industries, and transportation systems, for example, and reducing such a power consumption of motors is important considering the recent energy-saving-oriented society and the continuous increase of electric energy availability. For optimizing the energy for use in a motor, the motor is controlled in terms of output rotation speed using an AC-to-AC power conversion apparatus. The issue here is that, however, such a power conversion apparatus for use with a motor is hardly popular in the current market, and is expected to be more popular and widely used from this time forward. In order to encourage the use of the power conversion apparatus, there needs to achieve reduction of material by increasing the power density in the power conversion apparatus, and there also needs to implement a general-purpose power integrated circuit by designing the power conversion apparatus with a highly integrated design.
FIGS. 1 to 3 are each a circuit diagram of a conventional power conversion apparatus that performs power conversion into an AC load from an AC power supply via a DC section. Specifically, FIG. 1 shows an apparatus that performs power conversion into a three-phase AC load from a three-phase AC power supply via a three-phase full-bridge circuit 1, a DC link capacitor 2, and a three-phase full-bridge circuit 3. FIG. 2 shows an apparatus that performs power conversion into a three-phase AC load from a single-phase AC power supply via a single-phase full-bridge circuit 4, the DC link capacitor 2, and a three-phase full-bridge circuit 5. FIG. 3 shows an apparatus that performs power conversion into a three-phase AC load from a single-phase AC power supply via a single-phase full-bridge circuit 6, a composite chopper circuit 7, the DC link capacitor 2, and a three-phase full-bridge circuit 8.
FIGS. 4 to 7 are each a circuit diagram of a conventional power conversion apparatus that performs power conversion into an AC load from an AC power supply not via a DC section but directly. Specifically, FIG. 4 shows a direct power conversion apparatus of an indirect type, i.e., indirect matrix converter, that performs power conversion into a three-phase AC load from a three-phase AC power supply via two three-phase full-bridge circuits 9 and 10. FIG. 5 shows another direct power conversion apparatus of an indirect type, i.e., indirect matrix converter, that performs power conversion into a three-phase AC load from a single-phase AC power supply via a single-phase full-bridge circuit 12 and a three-phase full-bridge circuit 13. FIG. 6 shows an apparatus that performs power conversion into a three-phase AC load from a three-phase AC power supply via a direct power conversion circuit of a direct type, i.e., direct matrix converter, 14. FIG. 7 shows an apparatus that performs power conversion into a three-phase AC load from a single-phase AC power supply via a direct power conversion circuit of a direct type, i.e., direct matrix converter, 15.
FIGS. 8 to 13 each show a bidirectional switch for use in the power conversion apparatus described above for direct conversion from AC to AC. Specifically, FIG. 8 shows a bidirectional switch configured by a thyristor or a Gate Turn-Off thyristor (GTO) connected in reverse parallel with another. FIG. 9 shows a bidirectional switch configured by a diode bridge circuit connected with an Insulated Gate Bipolar Transistor (IGBT). FIG. 10 shows a bidirectional switch including an IGBT connected in reverse parallel with a diode, and the connecting structure is connected with another to face each other with the emitter side in shared use. FIG. 11 shows a bidirectional switch including an IGBT connected in reverse parallel with a diode, and the connecting structure is connected with another to face each other with the collector side in shared use. FIG. 12 shows a bidirectional switch including an IGBT connected in series with a diode, and the connecting structure is connected in reverse parallel with another. In FIG. 12 example, alternatively, the drift layer of the diode connected in series with the IGBT may be shared for use with another, and the resulting element piece, i.e., the reverse-blocking IGBT, may be connected in reverse parallel with another. FIG. 13 shows a bidirectional switch including a MOSFET connected with another to face each other with the source side in shared use.
In all the bidirectional switches of FIGS. 8 to 13, when any of a gate power supply, a control power supply, and a gate circuit is not activated, current flow is cut off bidirectionally.
The power conversion apparatuses of FIGS. 1 to 7 are each used as a power supply mainly for driving a motor. When the motor is driven thereby, the flow of power is directed in two directions, i.e., one is from the power supply to the motor (powering operation), and the other is from the motor to the power supply (regenerative operation). When such a flow of power is abruptly changed, the need arises to process the power of delay caused by controlling and switching inside of the power conversion apparatus. In consideration thereof, the apparatuses of FIGS. 1 to 3 are each provided with the DC link capacitor 2 of a large capacity for power processing, and the apparatuses of FIGS. 4 to 7 are each connected with a diode clamping circuit 11 for power processing.
FIG. 14 shows a specific example of the diode clamping circuit 11 for power conversion into a three-phase AC load from a three-phase AC power supply. FIG. 15 shows a specific example of the diode clamping circuit 11 for power conversion into a three-phase AC load from a single-phase AC power supply. In the diode clamping circuit, a capacitor 16 is used. The power from the load or the power supply is stored in the capacitor 16, and is discharged, as power loss, by a resistor 17 connected in parallel to the capacitor 16.
The power conversion apparatuses of FIGS. 4 to 7 have been implemented by using a semiconductor device with which the bidirectional current flow is allowed. With a conventional bidirectional switch typified by those of FIGS. 8 to 13, however, the flow of current cannot be controlled when a power failure occurs in the gate power supply, the control power supply, and the gate circuit. When the components in the power conversion apparatus, i.e., an input power supply, the gate power supply, the control power supply, and the gate circuit, suffer from sudden failures, momentary (short-time) power failures, and momentary voltage drop, or when a motor is with hard braking or is operated under light load, a diode clamping circuit is connected, and the DC link thereof is connected with a large-capacity capacitor and a discharge resistor, for processing the energy stored in the motor.
The problem here is that the DC link capacitor and the diode clamping circuit described above each occupy a large portion of volume of the power conversion apparatus, and this is the obstacle to achieve the high power density and highly integrated design of the power conversion apparatus.

National Institute of Advanced Industrial Science and Technology


A basketball game includes a board and a ring secured to the board, the board has an opening formed in middle portion and has a door panel pivotally coupled to the board for closing the opening, a beam has one end pivotally coupled to the board and the other end extended in the ring, and a lever couples the beam to the door panel. The door panel can be opened by the lever when the beam is depressed by a basketball, a funny face may be seen when the door panel is opened so as to cheer or greet the shot.

1. Field of the Invention
The present invention relates to a game, and more particularly to a basketball game assembly.
2. Description of the Prior Art
Typical basketball stands comprise a ring secured to a board for supporting netting member, when a basketball is shot through the ring, no means are provided for showing or indicating the shot.
The present invention has arisen to mitigate and/or obviate the afore-described disadvantages of the conventional basketball games.


The invention is directed to a polymeric film web, a carrier film, and a magnetic member. The carrier film comprises an inner polyethylene terephthalate layer and an outer plastomer layer. The magnetic member and the carrier film are layered onto the polymeric film web to form a closure member. The outer plastomer layer is adjacent the magnetic member and the carrier film extends beyond an upper edge and/or a lower edge of the magnetic member. The closure is heat sealed such that the seal at the interface of the first carrier film and the second carrier film is a peelable seal, the seal at the interface of the first film web and the first carrier film is a permanent seal, and the seal at the interface of the second film web and the second carrier film is a permanent seal.

The present disclosure relates in general to flexible packaging for products, and more particularly to flexible bags and pouches, such as stand-up pouches. The disclosure is especially concerned with polymeric flexible pouches with magnetic reclose features.
Flexible materials, such as polymers and flexible films, are often used to construct packages for products, such as bags and pouches. Such packages can be used to hold a variety of items such as snack food, trail mix, chips, nuts, fruit pieces, and other foods. In some cases, as in the snack food example, the type of product contained in the package is meant for consumption by the user one portion at a time. For example, the consumer may consume a portion of a snack mix and then wish to reclose the package in a manner which will preserve the freshness of the snack mix for later use.
Standard pouch reclosure features include press-to-close zippers. However, zippers have certain disadvantages. For example, pouches are typically made from extensible films such as polyethylene and polypropylene. A zipper applied to the pouch must be compatible with the pouch material. Due to the nature of these various polymers, the extensible polymers will stretch during application of the zipper to the pouch, creating differential forces. The pouch and/or the zipper may become deformed and/or inoperable due to the extension and differential forces.
Further, if a brittle or non-extensible closure feature is utilized, such as a brittle magnet, the magnetic material will often break during application to the pouch, due to the stretching, differential forces, and/or deformation of the extensible film. As the film web stretches, the magnets may break. The inventors have developed an inventive closure system utilizing a magnetic reclose which avoids these disadvantages and provides numerous advantages.


A method for increasing the etch resistance of positive working chemically amplified photoresist such as 193 nanometer sensitive photoresist, 157 nanometer sensitive photoresist, and deep-UV 248 nanometer sensitive photoresist while improving and maintaining fidelity of lithographic features and critical dimensions. The method involves coating and drying a photosensitive composition onto a substrate. The photosensitive composition comprises a water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation and a compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy. After imagewise exposing and developing, the image areas of the photosensitive composition are irradiated to electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant while simultaneously cooling the photosensitive composition during electron beam radiation to maintain the photosensitive composition at a temperature of less than about 20xc2x0 C.

1. Field of Invention
The present invention relates to a method and apparatus for increasing the etch resistance of photoresists which are suitable for use in the production of electronic devices such as integrated circuits. More particularly, the invention provides an improved process for increasing the etch resistance of positive working chemically amplified photoresists such as 193 nm, 157 nm, deep-UV 248 nm and x-ray wavelength sensitive, and electron beam sensitive photoresists while improving and maintaining fidelity of lithographic features and critical dimensions.
2. Description of the Related Art
The production of positive photoresists is well known in the art as exemplified by U.S. Pat. Nos. 3,666,473; 4,115,128 and 4,173,470. These contain aqueous alkali soluble polyvinyl phenol or phenol formaldehyde novolak resins together with light sensitive materials, usually a substituted naphthoquinone diazide compound. The resins and sensitizers are dissolved in an organic solvent and are applied as a thin film coating to a substrate suitable for the particular application desired. The resin component of photoresist formulations is soluble in an aqueous alkaline solution, but the photosensitizer is not. Upon imagewise exposure of the coated substrate to actinic radiation, the exposed areas of the coating are rendered more soluble than the unexposed areas. This difference in solubility rates causes the exposed areas of the photoresist coating to be dissolved when the substrate is immersed in an alkaline developing solution, while the unexposed areas are substantially unaffected, thus producing a positive image on the substrate. The uncovered substrate is thereafter subjected to an etching process. Frequently, this involves a plasma etching against which the resist coating must be sufficiently stable. The photoresist coating protects the covered areas of the substrate from the etchant and thus the etchant is only able to etch the uncovered areas of the substrate. Thus, a pattern can be created on the substrate which corresponds to the pattern of the mask or template that was used to create selective exposure patterns on the coated substrate prior to development.
Photoresists are either positive working or negative working. In a negative working resist composition, the imagewise light struck areas harden and form the image areas of the resist after removal of the unexposed areas with a developer. In a positive working resist the exposed areas are the non-image areas. The light struck parts are rendered soluble in aqueous alkali developers. The ability to reproduce very small dimensions, is extremely important in the production of large scale integrated circuits on silicon chips and similar components. As the integration degree of semiconductor devices becomes higher, finer photoresist film patterns are required. One way to increase circuit density on a semiconductor chip is by increasing the resolution capabilities of the resist. Positive photoresists have been found to be capable of much higher resolution and have almost universally replaced negative resists for this purpose.
The optimally obtainable microlithographic resolution is essentially determined by the radiation wavelengths used for the selective irradiation. However the resolution capacity that can be obtained with conventional deep UV microlithography has its limits. In order to be able to sufficiently resolve optically small structural elements, wavelengths shorter than deep UV radiation must be utilized. The use of UV radiation has been employed for many applications, particularly radiation with a wavelength of 157 nm, 193 nm and 248 nm. In particular, the radiation of lasers is useful for this purpose. The deep UV photoresist materials that are used today, however, are not suitable for 157 nm, 193 nm and 248 nm exposure. Materials based on phenolic resins as a binding agent, particularly novolak resins or polyhydroxystyrene derivatives have too high an absorption at wavelengths and one cannot image through films of the necessary thickness. This high absorption results in side walls of the developed resist structures which do not form the desired vertical profiles. Rather they have an oblique angle with the substrate which causes poor optical resolution characteristics at these short wavelengths. Polyhydroxystyrene based resists can be used in top surface imaging applications in which a very thin (xcx9c500 xc3x85) layer of resist is required to be transparent at ArF laser exposure wavelengths.
Chemical amplification photoresists have been developed, which have been found to have superior resolution. 157 nm, 193 nm and 248 nm photoresists are based on chemically amplified deprotection. With this mechanism, a molecule of photogenerated acid catalyzes the breaking of bonds in a protecting group of a polymer. During the deprotecting process, another molecule of the same acid is created as a byproduct, and continues the acid-catalytic deprotection cycle. The chemistry of a 157 nm, 193 nm and 248 nm photoresist is based on polymers such as, but not limited to, acrylates, cyclic olefins with alicyclic groups, and hybrids of the aforementioned polymers which lack aromatic rings. However, chemically amplified resist films have not played a significant role in the fine pattern process using deep UV because they lack sufficient etch resistance, thermal stability, post exposure delay stability and processing latitude. While such photoresists are sufficiently transparent for deep uv radiation, they do not have the etching stability customary for resists based on phenolic resins for plasma etching. A typical chemical amplification photoresist film comprises a polymer, a photoacid generator, and other optional additives. The polymer is required to be soluble in the chosen developer solution, and have high thermal stability and low absorbance to the exposure wavelength in addition to having excellent etch resistance. It would be desirable to overcome the above mentioned problems and to provide a photoresist film superior in etch resistance, as well as transmittance to deep UV.
There have been several attempts to solve this problem. One attempt to improve the etching stability of photoresists based on meth(acrylate) polymers introduced cycloaliphatic groups into the meth(acrylate) polymers. This leads to an improvement in etching stability, but not to the desired extent. Another proposal aims at producing sufficient etching stability only after irradiation in the resist coating. It has also been proposed to treat the substrate with the finished, developed, image-structured photoresist coating with specific alkyl compounds of magnesium or aluminum, in order to introduce the given metals in the resist material as etching barriers (See U.S. Pat. No. 4,690,838). The use of metal-containing reagents, however, is generally not desired in microlithography process, due to the danger associated with contamination of the substrate with metal ions.
U.S. Pat. No. 6,319,655, which is incorporated herein by reference, describes a process for improving the etch resistance of chemically amplified resists, in particular 193 nm sensitive photoresists, using a large area electron beam exposure. Electron beam exposure of chemically amplified photoresists, in particular 193 nm sensitive photoresists has been shown to improve the etch resistance and thermal stability of these photoresists. Many different formulations of chemically amplified photoresist utilized for 193 nm exposure have been developed. Some examples of materials used for 193 nm lithography are given in U.S. Pat. No. 6,319,655. For the next generation of lithography, new resist materials sensitive to 157 nm irradiation will be utilized for this application. Some of these materials (incorporated herein by reference) are listed in xe2x80x9cOrganic Imaging Materials, A View of the Futurexe2x80x9d by Michael Stewart et al., Journal of Physical Organic Chemistry, J. Phys. Org. Chem. 2000; 13: 767-774, xe2x80x9c157 nm Resist Materials: Progress Reportxe2x80x9d by Colin Brodsky et al., J. Vac. Sci. Technol. B 18(6), November/December 2000, 3396-3401, and in xe2x80x9cSynthesis of Siloxanes and Silsesquioxanes for 157m Microlithographyxe2x80x9d by Hoang V. Tran, et al, Polymeric Materials: Science and Engineering 2001, 84. Due to the volatility of the additives in these resist materials, electron beam exposure causes the expulsion of these additives, which causes shrinking of the resist. For 248 nm, 193 nm, and 157 nm resist technologies, chemical amplification is used to achieve high photo speed at the low exposure energies of the selected wavelength sources. For future lithography generations using extreme ultraviolet and x-ray wavelengths of 1-100 nanometers, similar chemically amplified resists are anticipated. The basic resist design concept is to start with a resin that has good transparency at the selected wavelength. The resin must be highly soluble in aqueous base developer chemistry. To make the resin insoluble in the developer, dissolution inhibitors, sometimes called blocking or protecting groups, are attached to the resin. These are usually very large, or bulky, molecules that are attached to the resin via bonds that can be easily cleaved. In most advanced resist systems there are usually several types of molecules attached to the resin in addition to the dissolution inhibitor. These include molecules that enhance the etch resistance of the material as well as molecules that help with lithographic performance. All of these molecules are attached to the resin via a link that is easily cleaved. The chemical amplification is achieved by adding a small amount of a photo-acid generator (PAG). This is a compound that generates a proton (H+) when exposed at the appropriate wavelength. These are usually onium salts, such as sulfonium salts, but it can be any of a number of suitable compounds. When the PAG is exposed and the proton is generated, the proton cleaves the nearest available bond between the resin and dissolution inhibitor. This cleaving reaction generates another proton, which cleaves the next nearest bond, and so on. This reaction can occur during the optical exposure, for low activation energy resists, or during the subsequent post-exposure bake (PEB), for high activation energy resists. The result of the de-protection reaction is the formation of an acid, which is then soluble in an aqueous base developer. As a result of the cleaving of the link between the resin and the blocking group, the blocking molecule usually leaves the resist as a volatile. In this way the resist can be fully exposed even though the incident optical exposure dose is very low, on the order of 10 to 20 mJ/cm2. After the optical exposure and completion of the de-protection reactions, the resist in the exposed areas can shrink from ten to twenty percent. This is due to the loss of the bulky protecting groups as volatiles. This reaction does not happen in the unexposed areas, which provides the contrast to form the images. Since the unexposed resist still contains the resin with the attached blocking groups, it is susceptible to shrinkage if these molecules are removed.
Due to the constraints of the resist design, and since the blocking groups are easily cleavable, the blocking groups can be removed by other means. One reaction path is thermal activation, where the resist is heated to a temperature that thermally breaks the bonds. This happens at different temperatures for the different protection groups but can be a low as 40xc2x0 C. to as high as 200xc2x0 C. Thermal activation results in the loss of the blocking groups as volatiles and a shrinkage of the resist. The blocking groups can also be removed by other radiation sources including plasma discharges, or accelerated particles.
During electron beam exposure, a reaction that is similar to the optical exposure can occur which cleaves the link between the protecting groups and the resin resulting in shrinkage of the resist. This reaction, and the associated resist shrinkage, is accelerated as the resist is heated by the energy of the incident electron beam. Since the full thickness of the resist is targeted for stabilization, substantial mass loss, and shrinkage, can result from the electron beam exposure. Because the interface between the resist and substrate is constrained, the remainder of the resist shrinks in three dimensions. This leads to a phenomenon know as xe2x80x9cpullbackxe2x80x9d where the top of the resist shrinks relative to the bottom. This effect is most pronounced on lithographic features such as contacts, line ends, and feature corners. The pullback phenomenon has undesired effects on the features, which make them unacceptable for device fabrication. This shrinkage occurs throughout the exposed regions of the photoresist and can cause deformation in the form of pullback on the upper portions of lithography features.
Many attempts have been made to correct or eliminate this resist deformation or pullback by using different process steps with the electron beam exposure. Lower current density exposures have been attempted to minimize the shrinkage as well as surface curing of the photoresist, that is, lowering the energy of electrons such that only the upper portion of the resist receives the electron beam exposure. Higher doses of electrons have been utilized at the lower portion, relatively to the upper portion, of the resist in an effort to minimize this pullback. In addition, different formulations of photoresist have been attempted to minimize the shrinkage and expulsion of resist components to minimize the pullback. Lower flux electrons with longer exposure times have also been utilized to minimize resist heating effects thereby reducing the temperature of the resist during electron beam exposure to no more than 50xc2x0 C. All of these attempts have failed at reducing the pullback effect caused by the electron beam hardening process.
Surprisingly, it has now been found that by simultaneously actively cooling the wafer to hold a temperature below 20xc2x0 C. and preferably below 10xc2x0 C. that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the glass transition temperature of these photoresists is much higher than 20xc2x0 C. For example, these photoresists are typically baked at temperatures in excess of 80xc2x0 C. after lithographic patterning. It is therefore surprising since there is very little difference in volume shrinkage and no compositional changes (at least detected by FTIR), that cooling the resist would effect the resist deformation.
Eliminating deformation of the lithographic features during e-beam exposure, the holding of the vertical wall profile, and the improvement in the uniformity and circularity of the contact holes in photoresist is an unexpected result because the resist exhibits almost the same amount of volume shrinkage (measured vertically) as in the known process described in U.S. Pat. No. 6,319,655. There is only a slight change in the total bulk shrinkage between the standard process and the cooled process, and the chemical composition of the film is not altered by cooling. Therefore it has been unexpectedly found that cooling the wafer results in a marked improvement to the stability of the lithographic features of these chemically amplified resists.
The invention provides a method for producing an etch resistant image, which comprises:
(a) coating and drying a photosensitive composition onto a substrate, which photosensitive composition comprises:
(i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;
(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitive the photosensitive composition;
(b) imagewise exposing the photosensitive composition to sufficient activating ultraviolet, electron beam or x-ray radiation energy to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;
(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;
(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant while simultaneously cooling the photosensitive composition during electron beam radiation to maintain the photosensitive composition at a temperature of less than about 20xc2x0 C.
The invention also provides a method for producing a microelectronic device image, which comprises:
(a) coating and drying a photosensitive composition onto a semiconductor substrate, which photosensitive composition comprises:
(i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;
(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitize the photosensitive composition;
(b) imagewise exposing the photosensitive composition to sufficient activating ultraviolet, electron beam or x-ray radiation energy to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;
(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;
(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant while simultaneously cooling the photosensitive composition during electron beam radiation to maintain the photosensitive composition at a temperature of less than about 20xc2x0 C.
The invention further provides a microelectronic device image produced by a process, which comprises:
(a) coating and drying a photosensitive composition onto a semiconductor substrate, which photosensitive composition comprises:
(a) coating and drying a photosensitive composition onto a semiconductor substrate, which photosensitive composition comprises:
(i) at least one water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation, wherein said polymer is present in the photosensitive composition in an amount sufficient to form a uniform film of the composition components when it is coated on a substrate and dried;
(ii) at least one photosensitive compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy, said photosensitive compound being present in an amount sufficient to substantially uniformly photosensitive the photosensitive composition;
(b) imagewise exposing the photosensitive composition to sufficient activating ultraviolet, electron beam or x-ray radiation energy to cause the photosensitive compound to generate sufficient acid to decompose the polymer in the imagewise exposed areas of the photosensitive composition;
(c) developing the photosensitive composition to thereby remove the exposed nonimage areas and leaving the unexposed image areas of the photosensitive composition;
(d) irradiating the image areas of the photosensitive composition to sufficient electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant while simultaneously cooling the photosensitive composition during electron beam radiation to maintain the photosensitive composition at a temperature of less than about 20xc2x0 C.
The invention still further provides an electron beam exposure apparatus which comprises
a) an enclosure;
b) an electrostatic chuck within the enclosure for holding a wafer during electron beam exposure, which electrostatic chuck comprises:
i) an electrically conductive wafer support having an electrically conductive top surface;
ii) a nonelectrically conductive layer on the wafer support;
iii) means for applying a substantially uniform electric field across said electrically conductive surface for holding a wafer on the support via the nonelectrically conductive layer;
b) an electron beam source within the enclosure which directs a wide, large beam of uniform electron beam radiation toward the wafer support;
c) a refrigerant within the enclosure which maintains a wafer positioned on the wafer support at a temperature of less than 20xc2x0 C. during electron beam irradiation.

Method and apparatus for modification of chemically amplified photoresist by electron beam exposure


According to the invention there is provided a method of reducing microbial levels in the interior of a building, including vaporizing an anti-microbial essential oil to produce vaporized anti-microbial essential oil, entraining the vaporized anti-microbial essential oil in an air stream, and directing the air stream into the air ducts of the building and then into an interior air supply of the building.

The quality of the air supply of an inside of a building can often be contaminated with volatile organic compounds that are emissions from various sources that readily evaporate and mix with the air breathed by the occupants of the building. Volatile organic compounds are emitted from a variety of organic and inorganic materials including, for example: photocopiers, laser printers, dusts, cleaning fluid detergents, carpet emissions, furniture glues and paints, carpet glues, polishes and adhesives, scents from perfumes, ventilation system contaminants, fungi and moulds from damp areas, etc. Fungi spore fragments are ultra-fine particles of diameter less than 0.01 mm, which are easily and deeply ingested into the lungs. Such particles can cause damage to the lungs. They are one of the major concerns in a building because they are capable of multiplying and carry resistant pathogens, viruses and bacteria. Not only do fungi spores and spore fragments float in the air, but they collect on surfaces such as ceiling tiles where they can grow into a large biomass waiting for a triggering event to be released into the air.
Poor indoor air quality is responsible for a number of health problems, collectively known as Sick Building Syndrome. Such health problems include dryness and irritation of the eyes, nose and throat; difficulty concentrating on mental tasks; headache, fatigue and drowsiness; shortness of breath, itchy and dry skin; hypersensitivity and allergies. Illnesses from building related causes frequently affect the respiratory system. Flu-like symptoms such as fever, chills and shortness of breath, wheezing and fatigue frequently occur. In fact Legionnaires Disease is a building related disease caused by bacteria. Studies have shown that work productivity can rise by as much as 10% if the indoor air is clean and healthful.
Any substance used to treat building air must be safe for the occupants and at the same time have anti-microbial capabilities, which last a relatively long time. Essential oils are volatile oils distilled or extracted from plants such as thyme, lemongrass, citrus, anise, clove, aniseed, roses lavendar, citronella, cedar leaf, cinnamon leaf, camphor, etc. Such oils have been used for various medicinal purposes, as antiseptics and disinfectants, as insecticides, as food flavorings, and as solvents. Because of their hydrophobic nature essential oils cannot easily be formulated into aqueous mixtures. U.S. Pat. No. 5,403,587 issued to McCue et al. discloses that such oils can be solubilized or dispersed when combined in appropriate amounts with water and a solubilizing or dispersing agent and used for their anti-microbial properties. However, no studies have been done on the reduction in effectiveness of the essential oil caused by the carrier and surfactant or spreading agent.

Method of disinfecting a building air supply


A drive control apparatus for a vehicle includes an engine, an electric motor, a clutch mechanism, an engine rotation sensor, a motor rotation sensor, an acceleration and deceleration intention detecting portion, and a controller. The controller controls a rotation speed of the engine to be an acceleration intention target value greater than a rotation speed of the motor and thereafter brings the clutch mechanism into the engagement state in a case where the acceleration and deceleration intention detecting portion detects that the vehicle is in an acceleration intention mode, and controls the rotation speed of the engine to be a deceleration intention target value smaller than the rotation speed of the motor and thereafter brings the clutch mechanism into the engagement state in a case where the acceleration and deceleration intention detecting portion detects that the vehicle is in a deceleration intention mode.

A known drive control apparatus for a hybrid vehicle where wheels are driven by an engine and an electric motor is disclosed in JP2008-55993A (which will be hereinafter referred to as Reference 1), for example. In the hybrid vehicle (the vehicle) disclosed in Reference 1, the engine, the electric motor, and a transmission are connected to one another in series so that the vehicle is driven by a combination of the engine and the electric motor. According to the drive control apparatus disclosed in Reference 1, in a case where the vehicle is started from a stopped state, the wheels are driven by the electric motor. In a case of accelerating the vehicle during a driving state of the vehicle, a clutch mechanism disposed between the engine and the electric motor is brought into an engagement state, i.e., the engine and the electric motor are connected to each other via the clutch mechanism, so that the driving of the wheels by the electric motor is assisted by the engine.
In addition, in a case of decelerating the vehicle by a brake operation during the driving state, a regenerative brake is initially obtained. Then, in a case where a further braking force is required, the clutch mechanism is brought into the engagement state to thereby obtain an engine brake. According to the drive control apparatus disclosed in Reference 1, the clutch mechanism is operated depending on the situation so as to connect or disconnect between the engine and the electric motor.
In a case where the clutch mechanism is operated so as to connect between the engine and the electric motor, an impact may occur at the vehicle depending on a rotation speed of each of the engine and the electric motor. For example, when the engine, of which the rotation speed is lower than that of the electric motor, is connected to the electric motor in a state where the wheels are driven only by the electric motor, a driver of the vehicle may feel like the vehicle is pulled rearward because of a rapid deceleration of the vehicle. At this time, according to the drive control apparatus disclosed in Reference 1, the clutch mechanism is brought into the engagement state when an absolute difference between the rotation speed of the electric motor and the rotation speed of the engine becomes equal to or smaller than a predetermined value. Therefore, the impact that occurs at the vehicle when the clutch mechanism is brought into the engagement state is reduced to some extent.
Nevertheless, according to Reference 1, the clutch mechanism is brought into the engagement state only on a basis of the absolute difference between the rotation speed of the electric motor and the rotation speed of the engine. Thus, the behavior of the vehicle that occurs due to the engagement of the clutch mechanism may differ from the intention of the vehicle driver at that time. That is, the vehicle driver may have from a large discomfort by feeling that the vehicle is pulled rearward because the engine having the lower rotation speed than that of the electric motor is connected to the electric motor in a case where the clutch mechanism is operated so as to accelerate the vehicle during the driving state.
On the other hand, the vehicle driver may also have the same discomfort by feeling that the vehicle is pushed forward because the engine at a high rotation state is connected to the electric motor in a case where the clutch mechanism is operated so as to decelerate the vehicle.
A need thus exists for a drive control apparatus for a vehicle and a method of controlling a drive apparatus for a vehicle which are not susceptible to the drawback mentioned above.

Drive control apparatus for vehicle and method of controlling drive apparatus for vehicle


A system and method for platform and language-independent delivery of page-based content. Content defined in a relatively abstract format is rendered into multiple platform formats in client-side applications' user interfaces in multiple human languages. The relatively abstract format is a subset of XML and is used to define user interface elements to be displayed on a page. A Model-View-Controller architecture is implemented comprising a plurality of servlet filters, a servlet pipeline and a plurality of rendering processors for client detection, client tracking, relatively abstract format preprocessing, relatively abstract format processing and validating, and transforming and rendering of the relatively abstract format into multiple platform formats in client-side applications' user interfaces in multiple human languages. A creation, modification and management tool is also disclosed for creating, modifying and managing platform and language-independent page-based content.

1. Field of the Invention
The present invention relates generally to transfer of content between a server and multiple network enabled client devices operating on different platforms over a network such as the Internet, and more particularly to rendering content in a relatively abstract format into multiple platform formats in client-side applications' user interfaces in multiple human languages.
2. Description of Related Art
The popularity of the Internet has engendered a number of devices having a capability for providing access to the Internet. As illustrated in FIG. 1, such devices include desktop and laptop computers, cellular phones and personal digital assistants ("PDAs"). The various different types of network enabled devices ("NEDs") may each operate with a different platform format ("platform"), for example by operating with different web-based or non-web-based browser types.
The term "content" is used herein to refer to all forms of electronic content (i.e., content that may be read or processed in an electronic form), including, but not limited to, digital video, audio, photos, graphics, text and animation. When a provider of content desires to provide to different platforms access to the content, the provider may be required to build, for example, custom web pages or other content containing pages for each specific platform format. That is, the provider would need to provide pages or other content resources formatted in HyperText Markup Language ("HTML"), Wireless Markup Language ("WML"), compact HTML ("cHTML"), and so on, to conform to the device/browser display capabilities. This is both labor intensive to initially setup and difficult to maintain as changes are made to the site's data and services.
Therefore, it can be seen that there is a need for a system and method for accepting content defined in a relatively abstract format and transforming the relatively abstract format input into a specific recognized platform format for a particular device.

System and method for platform and language-independent development and delivery of page-based content


A computer-readable medium contains computer-executable instructions. When the instructions are performed by a processor in an electronic device having embedded contactless payment functionality, the performance of the instructions causes the processor to provide data for a contactless payment transaction. In particular, various systems and methods utilize authentication schemes that already exist on a device in which the contactless payment functionality is embedded. One example of such authentication schemes is the use of password protection to lock or unlock the device in which the contactless payment functionality is embedded. Using the password protection functionality may provide varying levels of authentication protection based on the desires of the user. A number of exemplary uses of such a method and apparatus are disclosed herein.

Contactless payment systems are gaining widespread acceptance by retailers and are becoming increasingly popular among consumers. In contactless payment systems, also known as "Tap-and-Go" or "Pay and Wave" payment systems, consumers use a payment card or other device that is equipped with an integrated chip and antenna that securely communicates consumer account information via a radio frequency communication link to a retailer's payment terminal. The payment terminal then connects to an appropriate financial network or other back-end processing system via, for example, a communication network, to authorize the transaction. Once authorized, the consumer completes the transaction. This scheme of contactless payment accomplishes a transaction in a fraction of the time required by cash, traditional credit cards or debit card transactions, which require a card to be swiped through a reader.
Contactless payment devices typically include a chip and antenna. The chip includes, for example, consumer account information. When the chip is brought into close enough proximity to a suitable reader, the antenna will be activated and will transmit the consumer account information residing on the chip to the reader. Of course, to avoid errors and ensure that the reader is communicating with the correct device, the proximity of the contactless payment device to the reader required to activate the antenna is typically on the order of a very few inches at most.
The chip and antenna of known contactless payment systems may be incorporated into any of a number of form factors that are convenient for consumers. For example, these chips and antenna have been embedded into key fobs, contactless smart cards, and even cellular telephones. In the future, these chips and antenna may be incorporated into any of a variety of forms due to their small size. Because mobile wireless communications devices, such as, for example, cellular telephones, personal digital assistants, mobile e-mail devices, and the like, are being carried by more and more consumers, inclusion of the contactless payment system chips and antenna in these devices is becoming increasingly common.
However, such contactless payment systems suffer from a serious disadvantage that may result in unauthorized use of the device and significant loss of money or credit. For example, if a contactless payment device is lost, there is no quick and reliable way to avoid unauthorized use of the contactless payment device before the issuer of the account associated with the device is contacted by the user and the system cancels use of that particular device. In particular, there is no known solution for ensuring that the user of the contactless payment device is authorized to make payment using the contactless payment device. Of course, one solution may be to have the user enter a personal identification number or other like code at the point of sale to ensure that the user is authorized to make payment using the contactless device. This may be accomplished, for example, via a keypad associated with a contactless payment device reader. However, this solution may be somewhat at odds with the advantages associated with the use of such contactless payment systems in which speed and ease of use are paramount. Entering identifying information would slow the transaction speed down, and would not result in any more convenience than that associated with swiping a conventional credit or debit card to read its magnetic stripe.
Therefore, what is needed is a transparent way to authenticate a user of a contactless payment device that maintains the speed and convenience of contactless payment, while maintaining an acceptable level of security to ensure that unauthorized use of the device is restricted.

This patent is subject to a terminal disclaimer.

Method and apparatus for contactless payment authentication


Computer-implemented systems and methods are provided for automatically generating recitation items. For example, a computer performing the recitation item generation can receive one or more text sets that each includes one or more texts. The computer can determine a value for each text set using one or more metrics, such as a vocabulary difficulty metric, a syntactic complexity metric, a phoneme distribution metric, a phonetic difficulty metric, and a prosody distribution metric. Then the computer can select a final text set based on the value associated with each text set. The selected final text set can be used as the recitation items for a speaking assessment test.

Assessment of a person's speaking proficiency is often performed in education and in other domains. Such speaking assessment typically takes the form of texts (e.g., essays, passages, articles, etc.) being presented to and read by the person being assessed. The texts used in the assessments are usually selected from a large pool of texts collected from diverse resources (e.g., textbooks, journals, websites, and manual generation). The selection process, however, is often performed manually, which is costly, time-consuming, and lacks objectivity.

Systems and methods for generating recitation items


A digital optical receiving module including: an optical input, a first digital electrical output, an optoelectronic transducer device which converts a modulated optical signal, which is applied to the optical input, to an analog electrical signal, a decision-making device, which is electrically connected to the transducer device and converts the analog electrical signal to a digital signal and passes this digital signal to the digital electrical output, and a quality recording device, which is connected to the transducer device and determines the quality of the analog electrical signal before it is converted to a digital signal, with an information signal being produced as a function of the quality of the analog electrical signal. A method is also provided for monitoring the signal quality of a transmitted, modulated optical signal.

Large amounts of data are transmitted in ever more complex networks using optical information technology. In order to ensure the functional reliability of the networks, it is necessary to monitor the transmission reliability on a transmission path, and/or the quality of the transmitted optical signals.
Digital transmission of data is described by means of hierarchically subdivided layers in accordance with OSI reference model (Reference Module for Open System Interconnection). The lowermost, bit transmission layer (physical layer) defines the physical characteristics for information transmission. The data link layer, which is located above this, comprises protocols for checking and, if necessary, for correction of the transmitted information. This is done by using specific coding methods for error detection and error correction such as 4B/5B or 8B/10B codes, or else by using more complex methods such as FEC (forward error correction). Methods such as these also allow the bit error rate and hence the transmission reliability on a transmission path to be detected.
One disadvantage of the known methods for error identification and error correction is that critical transmission paths are identified only by the occurrence of errors. However, it is impossible to assess the quality of the link even before the errors have occurred during operation of a network. Furthermore, the known methods have an increasing proportion of redundant information as the efficiency increases, so that the effective useful data rate is reduced. Accordingly, there is a need for methods which identify the occurrence of transmission errors and/or a lack of quality in the transmitted, received signals at as early a time as possible.
There are known digital optical receivers for reception and for regeneration of optical signals after passing through a transmission path which comprise an analog input part, in which the optical signal is converted to an analog electrical signal, and a digital signal processing part, in which the analog signal is regenerated to a digital data signal with a normalized amplitude and clock information. In the analog part, the received optical signal is converted by means of a photodiode to a photocurrent, and is amplified in a preamplifier. Filtering may also be provided. The analog part of the digital optical receiver is preferably linear or is in the form of an amplitude-limiting amplifier.
The digital part of the digital optical receiver has a decision maker which is, for example, a clocked D-flip-flop, which is switched using a regenerated clock (from a clock that is recovered from the data signal). The exact timing of the original signal is thus reproduced. At its output, the decision maker produces a purely digital signal, which has a digital signal form with a standardized signal level corresponding to standards that have to be complied with. The digital signal form is in this case distinguished by minimum requirements for the rising flanks and the overshoot response of the individual pulses. A digital signal is produced at the output of the decision maker, and this digital signal can no longer be distinguished from the originally transmitted signal, except for any bit errors. A corresponding digital optical receiver is described, for example, in: E. Voges, K. Petermann (Ed.): optische Kommunikationstechnik [Optical communication technology], Section 23.7, pages 815-821, Springer-Verlag Berlin, Heidelberg 2002, whose contents are to this extent incorporated by reference in the present application.
U.S. 2002/0149821 A1 discloses a circuit which is integrated in a chip in order to control an optoelectronic transceiver, which monitors and controls a large number of functions of the transceiver. The control and monitoring functions of the transceiver are in this case mapped into specific memory areas of a memory. Flags are set when predefined limit values are overshot or undershot, and the content of these flags can be recorded via a serial interface.

Digital optical receiving module, and a method for monitoring the signal quality of a transmitted, modulated optical signal


A push rod operated multi-valve V-type engine particularly adapted for use in motorcycles or like vehicles and which engine is air cooled. The engine employs a very simplified construction and overhead valve actuating mechanism utilizing push rods. The push rods are contained within push rod tubes formed at one side of the engine that provide a neat appearance and ease of servicing without adversely affecting the air cooling. A composite cylinder head construction is employed, as well as an improved and simplified lubricating system for the pair of driven camshafts. Furthermore, a decompression system is incorporated in the valve actuating mechanism so as to facilitate starting.

This invention relates to an internal combustion engine and more particularly to an improved lubricating system for the valve actuating mechanism of such engines.
In four cycle internal combustion engines, the valves are normally operated by means of a cam shaft that rotates about an axis and is driven by the crankshaft at one-half crankshaft speed. The cam shaft has individual lobes that engage some form of follower mechanism for actuating the valves either directly or via an intermediate mechanism such as tappets, push rods and rocker arms. As is well known, the operating load on the valve actuating mechanism is particularly high especially in the area where the cam lobe contacts the valve actuating follower.
It has been the practice, therefore, to provide adequate lubrication in this area by drilling the cam shaft and cross drilling the cam lobe so that lubricant can be delivered to its surface and to the follower which they engage. Although this type of lubrication system is quite advantageous, it has some disadvantages, particularly with some types of applications.
Obviously, when the cam lobe is rotating and the opening is not engaged with the follower, the lubricating opening of the cam lobe is not adjacent the surfaces to be lubricated. Thus substantial oil will flow out of the opening which must be recaptured and recirculated. This also tends to reduce the pressure in the system and thus, higher pressures must be employed in order to compensate for this pressure loss.
In addition, it is not particularly desirable to drill holes for lubricating purposes through a surface of the cam lobe which functions to engage another member. The edges of such holes can cause scuffing action on the engaged follower.
It is, therefore, a principal object of this invention to provide an improved lubricating system for the cam lobe surfaces and engaged follower of the valve actuating mechanism for an engine.
It is a further object of this invention to provide a lubricating system for the cam lobes and follower of an engine wherein the lubricant is directed primarily to the surfaces that require it.
Frequently, the engine employs a plurality of cam shafts and this further aggravates the problem of providing adequate lubricating. That is, if each cam shaft is lubricated in the prior art type as described, then the problems become somewhat compounded and the amount of machining is significantly increased.
It is, therefore, a further object of this invention to provide an improved arrangement for lubricating a pair of cam shafts that are juxtaposed to each other and their associated follower mechanisms.

Lubrication arrangement for engine valve actuation


A system, method, and software program for facilitating the assignment of cell specifications to a plurality of cells of a system design. The methods include generating a plurality of candidate cell specifications that meet the specification for the system design. In one embodiment, the method entails using information related to intra-range preference for cell specifications to generate a set of alternative system pareto-optimal solutions which define a boundary of a region of candidate cell specifications. In another embodiment, the method entails generating a substantially uniform set of candidate cell specifications using a prediction-based performance model, such as support vector regression model or cluster-weighted model, an optimizing algorithm such as conjugate-gradient or Markov Chain Monte Carlo Method, and a sample density model. The method may also include graphically displaying substantially uniformly distributed cell performance data and corresponding system performance data, and allowing a user to focus on regions-of-interest via a selectable range graphic feature.

In current design practice, an experienced system designer typically allocates specifications for cells of a system by hand. In this regard, the designer may create a simple performance model of the system using, for example, a spreadsheet containing analytic closed formulas. Then, by changing the inputs of the system performance model, the designer may search for a combination of cell-level specifications that strike a balance between achievable cell designs and system performance. The designer may consider a few cell performance corner cases in addition to the nominal case, but the resulting specifications are typically expressed as nominal values or upper and lower bounds.
The current practice of manually performing specification allocation generally has several drawbacks that may lead the designer to choose unachievable or undesirable specifications. First, the process of searching for specifications is typically very time consuming. A designer often has to repeatedly change cell specifications and observe the resulting system performance, as well as maintain corner cases, which significantly multiples the number of tasks that need to be performed. Second, typically the designer's consideration of the specifications is limited to at most a few points at a time, which may cause the designer to overlook of a better solution.
For example, it is often difficult to understand the tradeoff among multiple cell specifications, where tightening one specification may give slack to another. Additionally, it is also typically difficult to recognize cases where a sensitive parameter is undesirably close to a critical boundary. Together, these aforementioned drawbacks make specification allocation a labor-intensive process, which often discourages collaborative efforts among system and cell designers, further increasing the likelihood of an unachievable specification being chosen.

Methods for facilitating specification allocation of hierarchical systems


An aspiration apparatus adapted to allow aspiration verification of a liquid such as of a biological liquid or reagent liquid, especially at low aspiration volumes (e.g., less than 25 μL). The apparatus includes a pump operable at an operating frequency, the pump optionally including a pumping chamber, a probe having a probe interior, a main supply line containing a backing liquid coupled to and extending from the pump and including the probe interior, a striction coupled to the main supply line, or the pump chamber, if present, and a reservoir fluidly coupled to the striction, wherein the striction is sized to minimize backing liquid flow through the striction at one or more disturbance frequencies above the operating frequency. Systems and methods for carrying out the liquid aspiration are provided, as are other aspects.

In testing within clinical laboratories to measure various chemical constituents of biological fluids obtained from patients, such as whole blood, blood serum, blood plasma, and the like, fully-automated clinical analyzers may be used to improve testing accuracy and cost per test.
Typically, an automated analyzer includes an automated aspirating and dispensing system 100, such as shown in FIG. 1, which is adapted to aspirate a liquid (e.g., a sample of biological liquid 108S or a reagent liquid 107R) from a container (sample container 108 or reagent container 107) and dispense the liquid into a reaction vessel 113 (e.g., a cuvette). The aspirating and dispensing system 100 typically includes a pipetting operation where probe 104 (otherwise referred to as a "pipette") mounted to a robot, performs aspiration and dispensing functions so as to transfer the liquid to the reaction vessel 113.
During the aspiration operation, the robot may position the probe 104 above the container, and descend the probe 104 into the container until the probe 104 is partially immersed in the liquid. A pump is then activated to draw in (aspirate) a portion of the liquid from the container into the interior of the probe 104. The probe 104 is then ascended (retracted) from the container such that the liquid may be transferred to the reaction vessel for testing. During or after the aspiration, an aspiration pressure signal from a sensor 130 may be analyzed to determine any anomalies, i.e., check for the presence of a clog or the presence of air should there be insufficient liquid remaining to carry out the desired aspiration.
Conventional systems may be able to acceptably perform these checks for anomalies when relatively large liquid volumes are aspirated (e.g., 30 μL or greater). However, if the volume of the aspirated sample is relatively small, noise in the pressure signal may dominate and may be so large that it may obscure the information contained in the pressure signal. Accordingly, when the aspirated liquid volume is relatively small, it may become very difficult to robustly verify proper aspiration. Thus, there is a need for improvements in pressure sensing during aspiration, especially when the aspirated volume of the liquid is relatively small.

Methods and apparatus for measuring aspiration pressure


A nonvolatile semiconductor memory device includes a silicon substrate, bit lines, word lines, and memory cells. The bit line is positioned above the main surface of the silicon substrate and the word line is provided to intersect the bit line. The memory cell is positioned at a region where the bit line and the word line intersect and has one end electrically connected to the bit line and the other end electrically connected to the word line. The memory cell includes a TMR element and an access diode electrically connected in series. The access diode includes an n-type silicon layer and a p-type silicon layer recrystallized by melting-recrystallization and has a pn junction at the interface between the n-type silicon layer and the p-type silicon layer. As a result, a nonvolatile semiconductor memory device reduced in size and having high performance can be manufactured inexpensively.

The present invention relates to a nonvolatile semiconductor memory device using a diode as an access element.
Recently, Magnetic Random Access Memory (MRAM) has drawn attention as a next-generation semiconductor memory device in place of Dynamic Random Access Memory (DRAM) or Statistic Random Access Memory (SRAM). This MRAM receives attention as such a nonvolatile semiconductor memory device in that, in theory, a high speed operation comparable to SRAM and a high integration comparable to DRAM can be realized at the same time, and data can be rewritten unlimitedly with low power consumption.
In MRAM, Tunneling Magnetoresistive (TMR) element has been proposed as a memory element storing data. This TMR element includes a Magnetic Tunneling Junction (MTJ) made of two ferromagnetic layers and a thin tunnel insulator layer therebetween, and an antiferromagnetic layer in contact with one of the ferromagnetic layers.
Predominantly, that one of ferromagnetic layers which is in contact with the antiferromagnetic layer is exchange coupled to the antiferromagnetic layer and has a fixed magnetic moment. This ferromagnetic layer is called a fixed layer. On the other hand, that one of ferromagnetic layers which is not in contact with the antiferromagnetic layer has its magnetization direction changed easily by externally applying a magnetic field. These characteristics are utilized to rewrite data into a memory cell. The ferromagnetic layer having a magnetization direction inverted by an external magnetic field is called a free layer.
In the TMR element having the structure described above, the magnetization direction of the free layer with respect to the magnetization direction of the fixed layer is controlled in parallel/antiparallel to vary the resistance value because of the tunneling magneto-resistance effect. In MRAM, this tunneling magneto-resistance effect is utilized to read out data.
Generally, in a nonvolatile semiconductor memory device using TMR elements, memory cells are arranged in rows and columns. The Reference concerning a nonvolatile semiconductor memory device having memory cells arranged in rows and columns includes U.S. Pat. No. 5,640,343. In the nonvolatile semiconductor memory device disclosed in this publication, in a manner corresponding to memory cells arranged in rows and columns, a bit line as a first conductive line is arranged for each column and a word line as a second conductive line is arranged for each row. In an intersection region with a bit line and a word line, a memory cell formed of a TMR element and a diode connected in series is arranged. Here, a diode connected in series to a TMR element is an access diode that functions as an access element to a memory cell.
In the nonvolatile semiconductor memory device having the structure described above, a composite magnetic field formed of magnetic fields in two directions is created by passing current through a bit line and a word line that are selected from a plurality of word lines and bit lines crossing each other. This composite magnetic field is used to rewrite the magnetization direction of the free layer.
On the other hand, in reading data, a word line corresponding to a selected memory cell is set to a low voltage (for example a ground voltage VSS) state. At this point, a bit line is precharged to a high voltage (for example a power supply voltage VCC) state to allow a diode to be rendered conductive and to allow a sense current to flow in the selected MTJ. The data can thus be read. It is noted that in the non-selected memory cell, since the word line is set to a high voltage state to maintain the corresponding diode in a non-conductive state, a sense current does not flow in the non-selected MTJ.
As described above, a so-called one-MTJ+ one-diode type nonvolatile semiconductor memory device having a memory cell formed of one TMR element and one access diode allows the memory cell array area to be smaller than a so-called one-MTJ+ one-transistor type nonvolatile semiconductor memory device using a transistor as an access element, whereby the integration may be improved drastically. Therefore, the nonvolatile semiconductor memory device of one-MTJ+ one-diode type has been developed intensively.
When this one-MTJ+ one-diode type nonvolatile semiconductor memory device is actually formed on a semiconductor substrate, the structural restriction and the process restriction impose limitations on the freedom of its design. Among others, some structures as illustrated below have been proposed.
A first structure has a word line of a metal material formed on a silicon substrate, an n-type silicon layer and a p-type silicon layer successively deposited on the word line, a TMR element formed thereon, and a bit line of a metal material deposited thereon (see for example FIG. 1C of U.S. Pat. No. 5,640,343). In this structure, the n-type silicon layer and the p-type silicon layer form an access diode and an pn junction is formed at their interface. It is noted that a polysilicon layer or an amorphous silicon layer is used as the n-type silicon layer and the p-type silicon layer.
A second structure has a p-type diffusion region and an n-type diffusion region formed on a main surface of a p-type silicon substrate, a TMR element formed on the p-type diffusion region, and a bit line of a metal material deposited thereon (see for example FIGS. 10A-10C of U.S. Pat. No. 5,640,343). In this structure, a word line is formed with the n-type diffusion region, an access diode is formed of the p-type diffusion region and the n-type diffusion region, and a pn junction is formed at their interface.
A third structure has a word line of a metal material formed on a silicon substrate, a TMR element formed on the word line, an n-type silicon layer doped with phosphorus (P) formed thereon, an aluminum layer deposited thereon, and a bit line formed thereon (see for example FIG. 8 of Japanese Patent Laying-Open No. 2000-196030). In this structure, the n-type silicon layer doped with phosphorus and the aluminum layer form a shot key diode. It is noted that a polysilicon layer or an amorphous silicon layer is used as the n-type silicon layer doped with phosphorus.
Although, in the foregoing, MRAM using a magneto-resistance effect element as a memory element applied to a memory cell has been described, a nonvolatile semiconductor memory device having a capacitive memory element applied to a memory cell is known as an alternative nonvolatile semiconductor memory device (see for example FIG. 4 of Japanese Patent Laying-Open No. 7-176772). The nonvolatile semiconductor memory device described in Japanese Patent Laying-Open No. 7-176772 uses an anti-fuse that is a kind of capacitive memory elements, as a memory element, and further uses a diode connected in series to this anti-fuse, as an access element.
In the nonvolatile semiconductor memory device described above, the electric characteristics of the diode employed as an access element is extremely important. For example, in MRAM, the value of the read current in reading data is decided by the relation between a potential difference between a word line and bit line and an resistance value of an access diode and a TMR element. Therefore, the variations in internal resistance of the diode prevents information stored in the TMR element from being read out correctly. The reverse direction characteristics of the individual diode is also important, and variations in leak current may cause an error. In other words, in order to implement a nonvolatile semiconductor memory device using a diode as an access element, it is essential to fabricate an access diode having good electric characteristics with a high production yield.
However, the nonvolatile semiconductor memory device having the first structure described above uses a polysilicon layer or amorphous silicon layer as a semiconductor layer forming an access diode, which leads to a wide range of variations in the electric characteristics of the access diode. The variations in the electric characteristics result from a great number of grains mainly present in these layers and prevent the access diode from fully functioning. Therefore, with the first structure, a nonvolatile semiconductor memory device with high performance is hardly realized.
The nonvolatile semiconductor memory device having the second structure described above uses a diffusion region formed in a semiconductor substrate that is a single-crystal silicon layer as a semiconductor layer forming an access diode, thereby resulting in its excellent electric characteristics. However, since the word line is formed in the diffusion region, it is difficult to pass a sufficient amount of current and to ensure a large S/N ratio. Therefore, with the second structure, a nonvolatile semiconductor memory device with high performance is hardly realized.
The nonvolatile semiconductor memory device having the third structure described above has a shot key diode formed as an access diode, which may be relatively excellent in its electric characteristics as compared with a pn junction diode. However, since the access diode includes a polysilicon layer, a wide range of variations still occurs in the electric characteristics. Therefore, with the third structure, nonvolatile semiconductor memory devices with high performance are hardly fabricated with a high production yield.
Therefore, it has been very difficult to manufacture nonvolatile semiconductor memory devices having reduced memory cell array areas and good characteristics with a high production yield, and the development of the technique that satisfies all of these conditions has been long waited.
An object of the present invention is to provide a high-performance miniaturized nonvolatile semiconductor memory device that can be manufactured inexpensively.
In accordance with one aspect of the present invention, a nonvolatile semiconductor memory device includes a semiconductor substrate, a first conductive line, a second conductive line, and a memory cell. The semiconductor substrate has a main surface. The first conductive line is positioned above the main surface of the semiconductor substrate. The second conductive line is provided to intersect the first conductive line. The memory cell is positioned at or in proximity to a region where the first conductive line and the second conductive line intersect, and has one end electrically connected to the first conductive line and the other end electrically connected to the second conductive line. The memory cell includes a memory element and an access diode electrically connected in series. The access diode includes a semiconductor layer recrystallized by melting-recrystallization and has a pn junction inside the semiconductor layer.
In accordance with another aspect of the present invention, a nonvolatile semiconductor memory device includes a semiconductor substrate, a first conductive line, a second conductive line, and a memory cell. The semiconductor substrate has a main surface. The first conductive line is positioned above the main surface of the semiconductor substrate. The second conductive line is provided to intersect the first conductive line. The memory cell is positioned at or in proximity to a region where the first conductive line and the second conductive line intersect, and has one end electrically connected to the first conductive line and the other end electrically connected to the second conductive line. The memory cell includes a memory element and an access diode electrically connected in series. The access diode has a first semiconductor layer selectively grown on the main surface of the semiconductor substrate by epitaxial growth and has a pn junction within the first semiconductor layer or at an interface between the first semiconductor layer and the semiconductor substrate.


A mounting apparatus and method for adjustably mounting, for example, an optical device to a rail interface of a firearm. The apparatus includes a base, a ring assembly configured to surround and grip the device, and at least two spacer members configured to be disposed and secured between the base and ring assembly. The ring assembly includes ring segments, a mechanism for securing the ring assembly to the base, and a mechanism for securing the ring segments together to grip the device therebetween. One of the ring segments has a support surface having a shape complementary to a support surface of the base. The spacer members are configured to be secured between the base and ring assemblies, and each spacer member has oppositely-disposed support surfaces configured to complementarily engage the support surface of either the base or ring assembly.

The present invention generally relates to hardware of the type adapted to mount devices to a rail interface, for example, of the type provided on a firearm, stand or tripod. More particularly, the present invention relates to a mounting apparatus adapted to mount a device, for example an optical device, to a rail interface of a firearm so as to enable adjustment of the height of the device relative to the rail interface.
Optical devices such as scopes, telescopes, monoculars, and sighting and aiming devices are commonly mounted to firearms, including rifles, shotguns, pistols and archery bows. These devices are preferably mounted so that their position relative to the firearm is maintained and remains stable during use of the firearm. A variety of hardware is commercially available for mounting optical devices to firearms, with most being adapted for use with a standardized rail interface, for example, a Picatinny-type rail interface (MIL-STD M1913), a Weaver-type rail interface, or a variation or adaptation of these, such as the NATO STANAG 2324 rail interface. These rail interfaces are similar, in that each defines a pair of parallel longitudinal rails (continuous or discontinuous) and slots that extend laterally between the rails and are spaced longitudinally along the length of the rail interface. These interfaces differ primarily by the width and spacing of their slots.
The sizes of devices that can be mounted to a rail interface vary widely, as do the optimal positions of the devices relative to the firearm and, therefore, the rail interface. For example, commercially available scopes typically have objective lenses in a range from 32 to about 56 mm, which significantly affects the position that will likely be suitable for the device on a firearm. In addition, firearm users typically position an optical device based upon the individual preferences of the user and the particular circumstances involved in the intended application or use of the device or firearm. For example, an optical scope might be positioned on the same firearm differently by two individuals based simply on differences in their physical characteristics. Also, users may wish to use multiple different devices on a single firearm, and such devices will likely have different sizes, shapes, and other characteristics associated with their use.
The substitution of one device for another on a firearm conventionally involves the use of different hardware to mount each device, while no modifications are typically available if the same firearm and device are used by different individuals. Therefore, it would be desirable if mounting hardware were capable of allowing for a range of adjustments between a firearm rail interface and one or more devices that one might be mounted to the firearm. However, such an adjustment capability should also provide stability so that the position of a device can be maintained and remain stable during use of the firearm.

Method of adjustably mounting a device to a firearm rail interface and mounting apparatus therefor


Techniques are disclosed that involve the processing of audio streams. For instance, a host processing platform may receive a content stream that includes an encoded audio stream. In turn, a graphics engine produces from it a decoded audio stream. This producing may involve the graphics engine performing various operations, such as an entropy decoding operation, an inverse quantization operation, and an inverse discrete cosine transform operation. In embodiments, the content stream may further include an encoded video stream. Thus the graphics engine may produce from it a decoded video stream. This audio and video decoding may be performed in parallel.

Many computing platforms include a host central processing unit (CPU) (also referred to herein as a host) to perform various processing operations associated with user applications. Such applications may involve the decoding and output (rendering) of media, such as video and/or audio streams.
With respect to video, a host typically relies on a graphics engine to perform operations involving the decoding and rendering of video. However, for audio, the host typically performs operations involving its decoding and rendering. Although dedicated hardware audio codecs (encoder/decoders) may be employed, they add considerable expense.
Unfortunately, the processing of audio streams by the host is not very power efficient. For instance, audio processing cannot typically be done in more than 2 or 4 threads in typical client platforms.

Producing decoded audio at graphics engine of host processing platform