A telecommunications system comprises a signalling network and a Voice over IP (VoIP) network. The signalling network in turn comprises gateway signalling points 6,7 for converting signalling messages between at least two different signalling protocols. The IP network comprises IP nodes 4 for routing IP datagrams, with at least certain of the IP nodes 4 being co-located with respective gateway signalling points 6,7, and with the co-located signalling points 6,7 being arranged in use to pass routing information to the respective IP nodes 4 to enable those nodes to prioritise and route incoming IP datagrams.

The present invention relates to IP telecommunications and more particularly to the use of IP technology for transmitting voice and other user traffic in a telecommunications system.
In conventional telecommunications networks, voice data and other user generated data is sent between telephone exchanges or xe2x80x9cswitchesxe2x80x9d using time division multiplexing over Synchronous Transfer Mode (STM) networks. In Europe, the E.1transmission protocol is used which divides time frames into slots such that corresponding slots in successive frames provide a 64 Kbits/second data channel. In the USA, a similar transmission protocol, referred to as T.1, is used.
A call connection is set up by reserving an end-to-end data channel between the originating exchange and the terminating exchange (possibly via one or more intermediate or xe2x80x9ctransitxe2x80x9d switches). The signalling necessary to set-up the connection, as well as to control and terminate the connection, uses the ISDN User Part (ISUP) signalling protocol which forms part of a Signalling System no.7 (SS7) signalling protocol stack. More particularly, a connection is reserved by propagating an ISUP Initial Address Message (LAM) from the originating exchange to the terminating exchange, the LAM containing an identification of the originating and terminating exchanges using so-called xe2x80x9cPoint Codesxe2x80x9d (PCs). For each inter-exchange link in the connection, the IAM carries forward an identification of the channel to be reserved for the connection. This identification is referred to as a Circuit Identification Code (CIC).
There currently exists a high level of interest in employing Internet Protocol (IP) technology in telecommunications networks both for the transmission of signalling traffic (e.g. ISUP messages) and user data. The advantages of using IP are an increase in network capacity due to replacing circuit switched channels with packet switched channels and potential cost savings due to the low cost of IP systems relative to conventional telecommunications systems.
In the event that two telephone exchanges are coupled via a conventional IP network for the transmission of user data, the IP network will route the data in the form of a sequence of IP datagrams between successive IP routers. The routers rely on so-called xe2x80x9cbest effortsxe2x80x9d to relay datagrams which means that datagrams are forwarded to the next router in the chain only if capacity on the interconnecting link is available. If sufficient capacity does not exist, then the packet is discarded, and a message returned to the originating switch advising that switch to resend the packet. It will be appreciated that this best efforts transmission service is not well suited to voice telephony or other forms of data transmission where real time or close to real time transmission is required.
ISUP comes in a number of national variants characterising different regulatory environments. Even within a given country, different operators may use different ISUP protocols which in turn differ from the inter-national ISUP protocol(s). In conventional telecommunication networks, gateway exchanges are able to convert between the ISUP variant of its home network and the variants of the xe2x80x9cforeignxe2x80x9d networks to which it is connected. Thus only a limited number of conversions are required at any one gateway exchange.
Consider now the situation which arises if two PSTNs are coupled via a Voice over IP (VoIP) network. ISUP signalling messages must be transferred between the two gateway nodes of the PSTNs and this may be done over that same IP network or over some other network. If the VoIP network replaces for example an International trunk then every gateway node connecting to the VoIP network must be able to convert ISUP messages of its home network into every one of the other national ISUP variants (which exist for foreign networks also coupled to the same VoIP network) and vice versa. This problem arises because a sequence of ISUP conversions is no longer carried out as the ISUP messages are passed along a chain of gateway exchanges.
Assuming that there are 60 national ISUP variants, then each gateway exchange must be capable of handling 60xc3x9760 or 3600 ISUP conversions. The provision of this number of conversions is difficult or even impossible to provide in practice.
It is an object of the present invention to overcome or at least mitigate the above noted disadvantage. It is a second object of the present invention to enable the transmission of user data using IP such that the delivery of the data is guaranteed. It is a third object of the present invention to reduce the number of ISUP conversions which must be provided for in a given gateway switch.
These and other objects are achieved at least in part by co-locating certain IP nodes of the IP network with gateway signalling points of the signalling network.
According to a first aspect of the present invention there is provided a telecommunications system comprising a signalling network and a Voice over IP (VoIP) network, the signalling network comprising gateway signalling points for converting signalling messages between at least two different signalling protocols and the IP network comprising IP nodes for routing IP datagrams, at least certain of the IP nodes being co-located with respective gateway signalling points, the co-located signalling points being arranged in use to pass routing information to the respective IP nodes to enable those nodes to prioritise and route incoming IP datagrams.
According to a second aspect of the present invention there is provided a method of setting up a call connection over a sequence of nodes of an Internet Protocol (IP) network, where each of said nodes is co-located with a signalling point of an SS7 signalling network, and with each IP node being identified by an IP address and each SS7 signalling point being identified by a Point Code (PC), the method comprising:
allocating to each link of the connection, at the SS7 signalling point level, a Circuit Identification Code;
notifying each IP node of the CIC of the or each link to a neighbouring IP node, and of the PC of the or each neighbouring signalling point;
at each IP node, translating the received PC and CIC combination(s) into an IP address and port number for the or each neighbouring IP node; and
defining at each IP node a priority delivery service for datagrams received from the or each IP address and port number combination.
It will be appreciated that once the connection is set-up between the sequence of IP nodes, an IP datagram received at an IP node can be analysed on the basis of either the IP address and port number from which it originated or the IP address and port number to which it is delivered to determine whether or not delivery of the datagram to the next IP node in the sequence is a priority action. It will also be appreciated that the IP addresses and port numbers derived for neighbouring nodes and channels may be used to route outgoing datagrams. For example, for a given connection, the IP node may contain mapped pairs of IP addresses and port numbers, e.g. {IP1,PNo1),(IP2,PNo2)}, such that a datagram received from one of the pair (IP2,PNo2) is routed as a priority to the other of the pair (IP2,PNo2).
The method of the present invention may be used to provide a call connection between two Plain Old Telephone Systems (POTS), where each of the POTS comprises a gateway node which converts user data between an IP format and a POTS format. Alternatively, the invention may be used to connect two Internet enabled terminals via respective access networks, where user data is transferred across the access networks in an IP format. The local exchange of such an IP enabled terminal may, for example, maintain a register mapping terminal (or subscriber) telephone numbers to IP addresses.
Whilst one suitable use for the method of the present invention is the setting up of Voice over IP calls, it will be appreciated that the invention also applies to setting up connections for the transfer of other forms of user data, e.g. facsimile, video conferencing.
According to a third aspect of the present invention there is provided a method of relaying datagrams at a node of an IP network which node is co-located with a signalling point of an SS7 network, wherein the IP node retains a set of IP address and port number combinations derived on the basis of PC and Circuit Identification Code (CIC) combinations passed to it by the co-located signalling point and identifying priority datagram transmissions, the method comprising:
receiving an IP datagram at said IP node;
comparing the originating IP address and port number combination of the received datagram with said set of IP address and port number combinations; and
in the event that said originating IP address and port number combination are contained in the list, relaying the datagram to a subsequent IP node as a priority and, in the event that said originating IP address and port number combination are not contained in the list, using only best effort to relay the datagram to a subsequent IP node.
According to a fourth aspect of the present invention there is provided a node of an IP network, the node being arranged to be coupled to neighbouring nodes for the purpose of setting up a call connection, and each of the nodes being arranged to be co-located with respective signalling points of an SS7 signalling network, the node comprising:
first processing means for receiving Point Code (PC) and Circuit Identification Code (CIC) combinations passed to the node by the co-located signalling point, which combinations identify priority datagram transmissions, and for deriving IP address and port number combinations on the basis of said PC and CIC combinations;
a memory for storing said set of IP address and port number combinations;
receiving means for receiving an IP datagram sent from one of said neighbouring nodes; and
second processing means for comparing the originating IP address and port number combination of the received datagram with said stored set of IP address and port number combinations and, in the event that said originating IP address and port number combination are contained in the list, for relaying the datagram to a subsequent IP node as a priority and, in the event that said originating IP address and port number combination are not contained in the list, for using only best effort to relay the datagram to a subsequent IP node.


The present invention provides a production process of a metal sulfide, which includes placing a metal component and sulfur in a conductive container, and applying a pulsed direct current to the container in a non-oxidizing atmosphere to cause the metal component to react with sulfur, and also provides a metal sulfide obtained by the process and represented by a composition formula: MSx, wherein M is at least one member selected from the group consisting of Ni, Cu, Fe, and Co, and 1<x≦2. The present invention is capable of easily producing a metal sulfide with a high proportion of sulfur atoms, which is expected to exhibit excellent properties as a positive-electrode active material for a high capacity lithium secondary battery.

The development of various devices and systems in recent years has increased the demand for higher performance batteries as a power source (primary battery, secondary battery, capacitor, etc.). For example, lithium secondary batteries are gaining widespread popularity as high energy density secondary batteries serving as the power source for electronic devices, such as portable communication devices, laptop computers, etc. Further, in terms of reducing environmental load, lithium secondary batteries are also expected to be used as batteries for driving the motors for vehicles. Accordingly, there is a demand for the development of high energy density lithium secondary batteries that will correspond to higher performance in the above devices. In order to meet this demand, increasing the capacities of both positive electrodes and negative electrodes is necessary.
However, the capacity of the positive electrode for currently available lithium secondary batteries has not increased as much as that of the negative electrode. For example, the specific capacity of lithium nickel oxide-based materials, which is said to be relatively high, is about 190 to 220 mAh/g. Even in the case of Li2MnO3 based materials, which contain a relatively larger amount of lithium per formula weight, their theoretical capacity based on the assumption that all of the lithium ions are used during charge and discharge, is merely about 460 mAh/g.
In contrast, although sulfur is a substance with a low operating potential, the theoretical capacity thereof is as high as about 1670 mAh/g. However, there are problems such as the fact that elemental sulfur has a low conductivity, and reacts with lithium ions during the discharge of a battery system including currently available organic electrolyte (for example, an electrolyte in which LiPF6 at a concentration of 1 M is dissolved into a 1:1 mixed solution of ethylene carbonate and dimethyl carbonate), and thereby dissolves into the electrolyte. Using metal sulfides (MSx; M represents a metal component such as nickel), which have a conductivity comparable to or higher than that of a semiconductor material and shows relatively low dissolution into the electrolyte compared to sulfur, is one approach to overcoming these problems. Because MSx reacts with two lithium atoms per sulfur atom during charge and discharge, the number of sulfur atoms per formula weight should be increased as much as possible in order to design a high capacity positive electrode. For example, when M represents nickel, the theoretical capacity of NiS, wherein x=1, is about 590 mAh/g, whereas the theoretical capacity of NiS2, wherein x=2, is about 870 mAh/g.
However, because sulfur ignites in air at about 250° C., and its melting point is as low as about 120° C., controlling the composition of a product is difficult.
Accordingly, an extremely complicated process is employed as a process of producing a metal sulfide MS2 with a high proportion of sulfur atoms. For example, a metal and a sulfide are reacted by conducting heat treatment for a long time while controlling sulfur vapor pressure in a reducing atmosphere. In order to complete the synthesis of the metal sulfide in a relatively short period of time, it is necessary to conduct the reaction in a stream of H2S or in a high-pressure gas atmosphere at a high-temperature.
However, the above-described processes require a prolonged heat treatment or a reaction that takes place in a high-pressure gas atmosphere. Further, Synthesis carried out using a stream of H2S requires exhaust gas treatment. Additionally, sulfide obtained by the process that uses a stream of H2S has poor crystalline quality. Accordingly, an easier production process is needed in order to promote the use of metal sulfide as a positive-electrode material for lithium secondary batteries.
Mechanical milling, precipitation reaction in liquid phase, etc., are known to be easier than the above-described processes. Of these, a production process using mechanical milling supplies less energy to a sample powder, as described, for example, in Non-Patent Document 1, compared to the thermal reaction process. However, although NiS, wherein x=1, can be easily produced by mechanical milling, NiS2, wherein x=2, is difficult to produce. Further, as described, for example, in Non-Patent Document 2, although a production process using a precipitation reaction in liquid phase can produce crystalline Ni3S2 (x=2/3), Ni3S4 (x=4/3), etc., by adjusting the pH of a reaction solution, it is also difficult to produce NiS2 (x=2) with this process.
Among the above-described metal sulfides, iron sulfide contains iron element, which is a relatively inexpensive metal, as a raw material. Thus, an iron sulfide with a high proportion of sulfur atoms is considered to be useful as a positive-electrode material that is inexpensive and has a high theoretical capacity.
The following process, for example, is known as an iron sulfide (FeS2) production process that has a high proportion of sulfur: iron and sulfur are mixed in a molar ratio of 1:2, iodine is added thereto, and then the mixture is vacuum-sealed in a quartz tube and thermally reacted for about 5 days (see Non-Patent Document 3 below). The following process is also known: after an NaOH aqueous solution saturated with H2S is added to a mixture of FeSO4·7H2O and rhombic sulfur, H2S is passed therethrough, and the reaction system is closed and kept under heat for about 2 weeks (see Non-Patent Document 4 below).
Further, the following process is also known: iron powder and sulfur powder are mixed in a molar ratio of 1:2, and the mixture is placed in a tungsten carbide container and mixed in a ball mill for about 110 hours under an atmosphere filled with Argon gas, thus producing iron sulfide (see Non-Patent Document 5 below).
However, these processes have disadvantages that precise atmospheric control is required during production and the reaction time takes long time exceeding 100 hours in order to obtain intended iron sulfide.
As described above, an easy production process for a metal sulfide with a high proportion of sulfur atoms has not been established. Accordingly, the development of a technique for easily producing a metal sulfide MSx (x>1) is desired in order to promote the widespread use of a high capacity lithium battery that uses a sulfur-based positive electrode.    Non-Patent Document 1: S-C. Han, H-S. Kim, M-S. Song, P. S. Lee, J-Y. Lee, and H-J. Ahn, J. Alloys Comp., 349, 290-296 (2003).    Non-Patent Document 2: Y. U. Jeong and A. Manthiram, Inorg. Chem., 40, 73-77 (2001).    Non-Patent Document 3: G. Brostingen and A. Kjekshus, Acta Chem. Scand., 23, 2186 (1969)    Non-Patent Document 4: R. A. Berner, Econ. Geol., 64, 383 (1969)    Non-Patent Document 5: J. Z. Jiang, R. K. Larsen, R. Lin, S. Morup, I. Chorkendor., K. Nielsen, K. Hansen, and K. West, J. Solid State Chem., 138, 114 (1998)

Nat'l Institute of Advanced Industrial Science . . .


An example method of establishing an authenticated session between two communicating devices includes establishing, by a first processor of a first device, a secure connection with a second device over the network using a communications protocol; receiving, by the first processor, an identity authentication request from the second device; passing, by the first processor, the identity authentication request to a second processor located on an authentication chip of the first device; generating, by the second processor using one or more authentication code functions stored on the authentication chip, one or more authentication codes using a unique serial number of the first device and an authentication key, both stored on the authentication chip; providing, by the second processor, the one or more generated authentication codes to the first processor; and sending, by the first processor, a response to the second device that includes the one or more generated authentication codes.

As more and more "smart" devices are being developed, the need to interconnect them grows. The so-called "Internet of Things" (IoT) is an environment in which objects (even including, but not limited to, animals or people) are given unique identifiers and are able to transfer data over a network, with or without interaction. This concept has evolved from technologies such as wireless communications, micro-electromechanical systems (MEMS), and the Internet. In recent years, the IoT has exploded, with sensors and basic control systems constituting a large portion of the market. The IoT technical space has rapidly grown, with already hundreds of competing standards, technologies, and platforms. However, key considerations have not always been taken into account. For example, as IoT networks grow, so do security threats. In addition, with the rapid growth of the market, it is difficult to predict all future needs and requirements. Of the existing IoT platforms available currently, some may offer varying levels of security and extensibility, but many, if not all, of these require a high level of programming knowledge to build and compile software from scratch or require the use of limited software development kits (SDKs) that may not even be in a language familiar to many developers.
In the drawings, the leftmost digit(s) of a reference number may identify the drawing in which the reference number first appears.


An array substrate and an array substrate testing structure are provided. The array substrate includes a display region and a non-display region, a plurality of receiving test signal pins, a plurality of bonding pins and a plurality of transmission lines are positioned on the non-display region, the receiving test signal pins and the transmission lines are arranged in row. This invention decreases width of non-display region of electrical device such that easily to design the narrow frame.

With development of science technology, more and more electric device has display function are widely use for daily life and work and bring huge convinces, therefore the electric device has display function become an indispensable and important tool of life. The electric device usually includes array substrate. The array substrate includes non-display region and display region. The display region usually positioned functional circuit for driving electric device to work for example touch electrode. The non-display region is positioned around the display region, and usually positioned testing pins. The manufacturing of electric device is to cell, package the array substrate, liquid crystal layer and color filter substrate. Generally, it needs to testing short circuit or broken circuit of the functional circuit of the array substrate after or before the cell process. In order to test the array substrate, positioning the testing switch circuit and testing signal outputting terminal on outputting pin of the non-display region of the array substrate for testing whether the array substrate functional circuit is short circuit or broken circuit in the traditional way. For connivance positioning the probe, the volume of testing signal inputting terminal usually more big (single terminal 400 um×400 um, totally have 10-20 terminals), it will occupy more space and not benefiting to narrow frame of electric device.

Array substrate and array substrate testing structure

WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.


The present invention relates to a method for the manufacture of a matrix and to a matrix (1) thus manufactured, at least one surface section (2) displaying a microstructure, which matrix (3) is suitable for inclusion as a mould insert in a mould cavity or in a cavity, in a unit producing plastic components, in order to assign said plastic components an opposing micostructure in a corresponding surface section. An original (3) with a surface section (4) displaying a microstructure less than 500 xcexcm is used in order to apply on this original layer upon layer of a material (11, 12, 13, 14) and/or mixtures of material producing a matrix, and thereafter the matrix (1) is removed from said original (3) or the material in the original is removed. A first layer of material (11) applied on the original (3) so that together with a number of additional layers of material, said matrix is formed, is selected having exceptionally good properties as regards the ability of the plastic component to release from the matrix after moulding, curing or polymerisation of the plastic material used, and exceptionally good properties as regards retaining the pattern on the microstructured surface section.

The present invention relates in the first place to a method for the manufacture of a matrix using an original.
More particularly the present invention relates to a method for the manufacture of a matrix which will be able at least to display a surface section with a negative microstructure, intended for replication as a positive microstructure on an object, such as a plastic component, produced in a plastic moulding machine.
Matrices of this type are suitable for inclusion as a mould insert in a mould cavity in a unit producing plastic components, in order to assign said plastic components a positive microstructure in a corresponding surface section.
Concepts like negative or positive microstructure are used in this application solely for the purpose of being able to elucidate the altered shape of the microstructure in the matrix or in the mould-cavity insert and the replicated microstructure in the plastic component.
The invention also relates to a matrix, suitably manufactured in accordance with the method.
The manufacture of matrices in accordance with the method for the present invention is based on using an original with a surface section displaying a sharp positive microstructure in order to apply on this original at least one layer of material and/or a mixture of materials producing a matrix, this material having been selected to withstand the forces exerted on a mould-cavity insert in a machine for moulding plastic components.
When the matrix or mould-cavity insert has been completely built up, measures are taken to remove the matrix from said original or remove the material in the original, so that the microstructure-related surface section of the matrix, with a sharp negative microstructure, will appear.
The present invention relates more particularly to use in applications where the microstructure is chosen with a groove width or the like of less than 500 xcexcm, for instance in the range of 50-0.1 xcexcm, but may naturally be used for greater groove widths.
Although the invention indicates the possibility of forming a matrix, for inclusion in a unit producing plastic components such as a mould-cavity insert, on an original such as a silicon disc, the invention also enables a second matrix with reverse microstructure to be formed from such a matrix or the like.
Regarding the properties associated with the present invention it can be mentioned that patent publication EP-A1-0 400 947 shows a method to be already known for manufacturing a substantially independent diamond or diamond-like film (16) with a desired profile, the method comprising:
the application of a thin carbide layer (14) on a fixed substrate (10) having a surface (12) with a form corresponding to the desired profile,
the application of a film (16) consisting of crystalline diamond or a diamond-like film, on the carbide layer (14), and removal of the substrate (10).
Patent publication EP-A10 417 924 shows a method for manufacturing moulded diamond articles, the method comprising:
the formation of a reactive gas or chemical vapour, said gas comprising active carbon and means for forming a diamond deposit on a predetermined substrate,
the use of a non-flat model of predetermined shape, the surface of the model being such that a layer of diamond can be built up from said vapour,
where the non-flat model is also assigned the ability to release a diamond layer formed by a chemical vapour phase being deposited thereon,
the formation of a layer of synthetic diamond against the non-flat model by allowing the surface of the non-flat model to be brought into contact with the vapour under such conditions that the diamond buildup produces a synthetic diamond article, the shape of which conforms to the shape of the non-flat model, and
removing the synthetic diamond article from said non-flat model.
Also pertaining to prior art is an article entitled xe2x80x9cCVD Replication for Optics Applicationsxe2x80x9d by Jitendra S. Goela and Raymond L. Taylor, published in SPIE, Vol. 1047, xe2x80x9cMirrors and Windows for High Power/High Energy Laser Systemsxe2x80x9d (1989), describing a deposition process using a chemical vapour in order to replicate shapes, patterns and highly reflective surfaces in optical material (ZnS, ZnSe) and mirror material (Si, SiC) transferable in infrared rays, for several applications.
A method is also known through patent publication EP-A1-0 442 303 for producing three-dimensional workpieces or components made of diamond, comprising:
a) placing a model heated to a CVD diamond-forming temperature (500 to 1100xc2x0 C.) in a chamber, the model constituting a negative of the workpiece,
b) applying or supplying a gas mixture of hydrocarbon/hydrogen to said chamber at a pressure of 0.013 to 1334 mbar (0.01 to 1000 torr),
c) creating at least a partial degradation or decomposition of said gas mixture in, said chamber to form a CVD diamond layer on more than one surface of said model, and
d) removing said model from said CVD diamond layer to produce said diamond workpiece, which will thus display the surface characteristics of the surface of the model on which it was formed.
More particularly, FIGS. 5A, 5B and 5C show a step-shaped or groove-shaped pattern manufactured from molybdenum, in which identical parallel grooves form a check pattern with 5 mm spacing after machining.
Groove 32 has a width of 0.03 inch (0.76 mm) and a depth of 0.013 inch (0.33 mm), with 5 mm between the centre lines of the grooves. The thickness of the plate is chosen as 3.81 mm.
Parts of the workpiece 34 are soldered to a carbide substrate in order to produce a cutting tool.
Methods for manufacturing a matrix with at least one surface section displaying a negative microstructure, in which the matrix is suitable for inclusion in a mould cavity, as a mould cavity insert in a unit producing plastic components, in order to assign said plastic components a corresponding surface section with corresponding positive microstructure, wherein an original with a surface section displaying a positive microstructure is used in order to apply on this original layer upon layer of material and/or mixtures of material producing a matrix, and thereafter removing the matrix from said original or removing the material in the original, are also known.
In a method as described above it is also known to coat the negative microstructure, in a subsequent treating process, with a material layer that per se has good durability qualities against stresses in the plastic moulding unit when used as a mould-cavity insert.
It is also known that each application of such additional, reinforcing materials on a matrix results in somewhat deteriorated exactitude in the negative microstructure of the matrix, and thus somewhat deteriorated quality of the positive microstructure to be transferred to the plastic component.
It is also known that the wear caused by a plastic compound on the mould-cavity insert is considerable and that the surface displaying the microstructure must be coated with a material that will stand up to wear, particularly if the plastic compound contains an abrasive filler such as quartz.
Such filler materials may also be selected from materials that will give a low thermal expansion coefficient, such as 0 or close to zero, or may offer reinforcing properties from the mechanical aspect.
The following publications also pertain to prior art in this field:
D1) Patent Abstracts of Japan, abstract of JP 2 225 668, publ. 1990-09-07 and JP-2 225 688-A and Derwent""s abstract, No. 1990-316 827, week 9042.
A method is shown and described here for producing a core with an exact relief-related pattern on its surface, a non-electrical plated coating of a first layer on the surface of the core, and dipping the platedcore in an alectro-bath prior to oxidation of the non-electrical plating coating is undertaken. A strong union is ensured between the model and the non-electrical coating.
It is advocated here that an epoxy plastic is supplied via an inlet (9b), as a reinforcing agent (9a), through which a counterdie (9) is formed with a reversed pattern (8). Thereafter a non-electrical plating coating is applied on the counterdie or core (9) to produce a plated coating (10).
This coating (10) increases in hardness since a mixture of a component of a reducing agent in the plating bath and a plated metal is utilised, thus producing a reversed pattern (1).
Before the surface of the plated coating is oxidised or after the surface has been roughened, an electro-formed layer 12 is applied on the above surface.
By subsequently peeling off the above-mentioned laminating coatings of the counterdie (9), an electro-formed mould body (1) is obtained, consisting of a plated layer (10) and an electroformed layer (12), which is improved from the adhesive aspect, and has an inverted pattern (11).
D2) Patent Abstracts of Japan, abstract of JP 3 342 787, publ. 1991-10-30 and JP-3 243 787-A and Derwent""s abstract, No. 1991-364 686, week 9150.
A mould (4) made of metal is shown here, provided with a mould-producing recess in the form of a deep hole (51) with a ridge (52).
In this case a master with protrusions (11 and 12) corresponding to the hole (51) and the ridge (52) consists of aluminium.
A nickel-plated layer (2), including fine hard ceramic particles of SiC, TiC, TiN, etc, is formed on the surface of the master pattern (1).
A shell (3) consisting of nickel is also formed.
The pattern is dissolved in NaOH and removed, and the remaining part of the shell (3) is shaped to a specific size and inserted in the concave part of the mould (4).
A plated layer is thus formed with a hard and uniform surface, in which the ceramic particle-shaped material is uniformly distributed and facilitates release of the moulded product from the mould.
D3) EP-400 672-A2.
A technique is shown and described here for producing a mould enabling replication of a large number of plastic components.
The mould displays a hologram or other microstructure to be transferred to the outside of a moulded article or component.
The mould is produced by electro-depositing a metal on the model of the article to be moulded.
Prior to this deposition the hologram or other microstructure shall be formed on the surface areas of the model by means of known technology.
D4) Patent Abstracts of Japan, abstract of JP 4 089 212, publ. 1992-03-23 and JP-4 089 21 2-A and Derwent""s abstract, No. 1992-147 406, week 9218.
An arrangement is shown here in which plastic is introduced between a mould (1) and a glass lens (5), the plastic hardening so that a plastic layer (4) is formed on the lens (5), with an intermediately oriented carbon film (2).
D5) Patent Abstracts of Japan, abstract of JP 5 169 459, publ. 1993-07-09 and JP-5 169 459-A and Derwent""s abstract, No. 1993-252 170, week 9332.
This shows a base material for a mould and part of this is coated with a hard carbon film or diamond-like carbon film (DLC-film).
D6) EP-856 592-A1
This shows and describes a substrate (1) that is covered, at least partially, with a layer (1) consisting of a number of layer build-ups (2), each such build-up comprising:
a first diamond-like layer (3) consisting of nano-composites, nearest the substrate and displaying co-operating networks of a C:H and a Si:O,
a second layer (4) consisting of diamond-like composites, over said first layer (3),
an intermediate layer (5) between said first and second layers, consisting of a mixture of said first and second layer, and
when the number of layer structures above exceeds one (1), an additional intermediately oriented layer (7) is provided.
D7) GB-2 284 175A
This shows and describes a mould with exceptionally good release capability, particularly in the production of golf-ball cores.
Also proposed is for the mould to be covered by a tungsten carbide layer within the range of 2 to 20 xcexcm.
D8) U.S. Pat. No. 4,546,951-A
Here a mould is shown and described for encapsulating parts in a plastic material.
A layer of hard material, such as a nitrite layer, is applied by means of vapour deposition in vacuum at a high temperature on to at least specifically selected surface areas.
Technical Problems
Considering that the technical deliberations a person skilled in the art must perform in order to be able to offer a solution to one or more of the technical problems posed constitute initially an insight into the measures and/or the sequence of measures to be taken, and also a selection of the means required, the following technical problems should be relevant in developing the object of the present invention.
Considering the previous state of the art as described above, it would appear to be a technical problem to create such conditions that a matrix, produced against an original, shall have a durable first material layer for building up the matrix, where this material layer shall also display such properties that, with simple additional treatments, the matrix can be placed directly in a mould half, as a mould-cavity insert, in a unit for producing plastic components.
A technical problem exists in being able to select at least said first material layer for forming the matrix, with favourable properties appropriate for the intended future application, as regards such criteria as durability, predisposition of the plastic material to release from the microstructured surface or surfaces of the matrix, and other equivalent conditions.
A technical problem is also entailed in being able to perceive the significance of and advantages associated with having a first thin layer of material applied against the original to form the matrix, be selected with exceptionally good durability properties in the manufacture of plastic components, exceptionally good properties as regards the ability and predisposition of the plastic component to release from the matrix after moulding, curing or polymerisation of the plastic material used (low friction), and exceptionally good properties as regards retaining a sharp pattern on the microstructured surface section.
A technical problem is also entailed in being able to perceive the significance of and advantages associated with selecting a thin diamond-related material layer as said first material layer that, besides hard and durable properties, also displays low friction and exceptionally good release properties from the moulded plastic component.
It is furthermore a technical problem to be able to perceive the significance of and advantages associated with utilising application methods based on a crystalline diamond coating, such as CVD (Chemical Vapour Deposition) technology (750-800 degrees C.) or PVD (Physical Vapour Deposition) technology.
It is furthermore a technical problem to be able to perceive the significance of and advantages associated with utilising application methods based on an application of a hard and durable material layer with lower temperature requirements or DLC (Diamond-Like Carbon) layer (ca. 200 degrees C.), such as nitrides, carbides and the like.
It is thus a technical problem to select a layer produced using CVD technology or a DLC layer or some other layer material that has proved relevant for a specific application.
A technical problem is also entailed in being able to perceive the significance of selecting said first material layer with a predetermined thickness, the selected thickness being dependent on the material chosen for the first material layer, the shape and dimensions of the microstructure, and the choice of plastic material and of filler.
It would also appear to be a technical problem to be able to choose a material and/or a material mixture in a second and/or a third layer (an intermediate layer) in combination with a chosen thickness for the material in these layers.
A technical problem is also entailed in being able to perceive the significance of and advantages associated with selecting a utilised original in the form of a silicon disc or the like, with a positive microstructure thereon, and in having said silicon disc removable by means of a basic etching after the matrix has been built up.
A technical problem is also entailed in being able to perceive the significance of selecting KOH, NaOH or similar liquids for said basic etching.
A technical problem is also entailed in being able to perceive the significance of and advantages associated with selecting a mixture of DLC and Ni as a second material layer.
A technical problem is also entailed in being able to perceive the significance of selecting said second material layer with a thickness appropriate to the application.
A technical problem is also entailed in being able to perceive the significance of utilising a third material layer and, in that case, selecting only nickel or at least primarily nickel to form the third material layer.
A technical problem is furthermore entailed in being able to perceive the significance of selecting said third material layer with a thickness appropriate to the application.
A technical problem is also entailed in being able to perceive the significance of selecting a plating of nickel material as a fourth material layer and in selecting a thickness of said layer appropriate to the application.
A technical problem is also entailed in being able to perceive the significance of applying said first material layer, consisting of a DLC layer, by means of a sputtering process.
A technical problem is also entailed in being able to perceive the significance of applying said second material layer, consisting of a mixture of DLC and Ni, by means of a sputtering process.
Solution
In order to solve one or more of the above technical problems, the point of departure for the present invention is a method for the manufacture of a matrix, and a matrix thus produced, with at least one surface section displaying a microstructure, which matrix is suitable for inclusion in a mould cavity or in a cavity, while forming a mould insert, in a unit producing plastic components, in order to assign said plastic components an opposing microstructure in a corresponding surface section, an original being used in order to apply on this original layer upon layer of a material and/or mixtures of materials producing a matrix, and thereafter remove the matrix from said original or, preferably, remove the material in the original in order to expose the matrix and the surface pertaining to the microstructure.
In such a known method, it is proposed according to the invention that a first layer of material is applied against the original so that, together with a number of additional layers of material, said matrix is formed, that the first layer of material is selected having exceptionally good durability properties in the manufacture of plastic components, exceptionally good properties as regards the ability of the plastic component to release from the matrix after moulding, curing or polymerisation of the plastic material used, and exceptionally good properties as regards retaining the pattern on the microstructured surface section.
Preferred embodiments falling within the scope of the inventive concept include the selection of a hard, durable, thin layer of material with low friction and good release properties from the plastic material, for said first layer of material.
Said first material layer may be a crystalline diamond layer, such as a DLC layer or a layer that can be applied using CVD technology and/or PVD technology (Physical Vapour Deposition).
For certain applications the first material layer could also consist of nitrides, carbides and the like.
The first material layer should be applied to a thickness of 0.1-100 xcexcm.
A second material layer, with good adhesive capability to the first material layer, is applied on the first, where the second material layer may consist of DLC, titanium and/or chromium.
Said second material layer should be applied to a thickness of 0.05-2.0 xcexcm.
A third material layer, with good adhesive capability to the second material layer, is applied on the second layer and said third material layer may consist of a nickel layer.
Said third material layer should be applied to a thickness of 0.05-2.0 xcexcm.
Said second material layer and said third material layer may also be combined to an intermediately oriented layer having a chosen high DLC proportion or a high titanium and /or chromium concentration at a boundary surface to said first material layer and a high nickel concentration at a boundary surface to a bulk material in the form of a fourth layer, serving as mechanical support.
Said first material layer may preferably be chosen having a thickness of 1-15xcexcm.
The invention also advocates selecting a treated silicon disc or the like with a chosen microstructure, as an original, and that said silicon disc can be removed by means of a basic etching.
The use of KOH, NaOH or equivalent basic liquids are proposed for this basic etching.
According to the invention a mixture of DLC and nickel may be selected as a second material layer.
Said second material layer may preferably be chosen having a thickness of 0.05-1.0 xcexcm.
The invention also proposes applying a third layer of material and selecting nickel for this third material layer.
Said third material layer may then be chosen having a thickness of 0.05-1.0 xcexcm.
As a fourth layer of material the invention proposes that this be applied in a plating process and shall consist of pure nickel.
Said fourth material layer may be chosen with a thickness appropriate for the application.
The invention particularly advocates application of a DLC layer or similar by means of a sputtering process in combination with the application of DLC and nickel, serving as a second material layer, by means of a sputtering process.
The third material layer may also be applied by means of a sputtering process.
The second and the third material layers may also be applied, integrated, by means of a sputtering process.
The ratio between the proportion of DLC and the proportion of nickel shall advantageously be chosen varying through the layer and with 50% of each in the mid-region of the layer.
Advantages
The advantages that may primarily be deemed significant for a method in accordance with the present invention, and a matrix manufactured in accordance with the method, are that conditions have been created to be able, in a simple manner, to create a matrix suitable for a mould-cavity insert, with a hard, durable, thin and sharp microstructured surface facing towards the plastic material in a moulding tool.
The material in this thin layer, which may comprise a DLC layer of 0.1-100 xcexcm, is such and so chosen that the microstructured surface of the matrix will display good release properties with regard to a chosen plastic material and the pattern in the matrix can be retained intact over a long period of time.
A matrix in accordance with the invention is built up of a number of thin layers of material and a thick layer of bulk material, serving as mechanical support.
What is primarily deemed characteristic of a method for manufacturing a matrix in accordance with the present invention is defined in the characterizing part of the appended claim 1, and for a matrix preferably manufactured by means of the method, is defined in the characterizing part of the appended claim 27.

Method for the manufacturing of a matrix and a matrix manufactured according to the method


A hoisting apparatus for a manhole adapted to be fastened to a guardrail of a manhole. The hoisting apparatus is vertically spaced above and extends across the manhole. The hoisting apparatus has two operating positions enabling it to raise an object out of the manhole, maneuver the object horizontally over a surface area adjacent to the manhole, and lower the object onto the adjacent surface area. Likewise, the hoisting apparatus can be utilized to raise an object off the adjacent surface area, maneuver the object over the manhole, and lower the object into the manhole. Furthermore, the hoisting apparatus is lightweight, portable, and mechanically non-complex.

Manholes provide access to underground networks. For example, in urban areas underground networks for utility and sewage systems are generally accessible via manholes. Both underground personnel and working materials enter and exit the underground networks via the manholes. Devices for lowering and raising working materials are utilized for assisting underground workers transport necessary equipment into and out of the manholes. These hoisting devices can be bulky and cumbersome and get in the way of underground workers who wish to enter or exit a manhole having a hoisting device over it.
Conventional fixed manhole hoisting devices are not only cumbersome, but they can only raise and lower objects vertically and are not capable of horizontally maneuvering hoisted objects. Once an object is raised out of a manhole, workers must maneuver the object away from the manhole and over a surface area adjacent to the manhole where the object can be lowered onto the adjacent surface area.
The inventor is not presently aware of hoisting devices that are designed to be secured to a conventional manhole guardrail. It would thus be desirable to provide a hoisting apparatus for a manhole which is compact, lightweight, capable of maneuvering objects horizontally, and formed from a minimum number of non-complex parts.


A display panel includes an array substrate and an opposite substrate. The array substrate includes a plurality of data lines, a plurality of gate lines, a plurality of first signal lines, a plurality of second signal lines and a plurality of pixels. Each of the pixels includes a pixel electrode and a common electrode insulated from the pixel electrode. The opposite substrate includes a plurality of connecting members. At least one of the connecting members is electrically connected to at least one of the first signal lines and the second signal lines by an externally provided pressure. Thus, when an externally provided pressure is applied to the display panel in order to perform a touch screen function, an alignment of the liquid crystal molecules disposed on the array substrate may not be substantially changed, and a display quality may be improved.

1. Field of the Invention
The present invention relates to a display panel, a display apparatus having the same, and a method thereof. More particularly, the present invention relates to a display panel capable of performing a touch screen function, a display apparatus having the display panel, and a method thereof.
2. Description of the Related Art
In general, a liquid crystal display ("LCD") apparatus displays an image using optical and electrical properties of liquid crystal, such as an anisotropic refractive index, an anisotropic dielectric constant, etc. The LCD apparatus has characteristics, such as a lighter weight structure, lower power consumption, lower driving voltage, etc., in comparison with a display apparatus such as a cathode ray tube ("CRT"), a plasma display panel ("PDP") and so on.
The LCD apparatus, in general, includes an input part having a control interface and a system part that calculates data to output a control signal. The data is applied to the system part through the input part, and the system part outputs the control signal based on the data to display an image.
Recently, the LCD apparatus further includes a touch panel that receives data using icons displayed on a screen of the LCD apparatus so that the user directly inputs the data to an LCD panel. The touch panel detects a touch position on which the finger or the touching object makes contact with the screen, and changes the touch position into an input signal to apply the input signal to the LCD apparatus. When a computer includes the LCD apparatus having the touch panel, an additional input part such as a keyboard, a mouse, etc., is unnecessary. In addition, in a mobile device such as a cellular phone that includes the LCD apparatus having the touch panel, an additional input part such as a keypad is unnecessary. Thus, the touch panel has been widely used.
When the touch panel is formed on the LCD panel, a thickness and a size of the LCD apparatus having the touch panel is increased. In order to decrease the thickness and the size of the LCD apparatus, the touch panel is integrally formed with the LCD apparatus. When an object such as a finger touches the touch panel integrally formed with the LCD apparatus, alignments of liquid crystal molecules in an area adjacent to a point touched by the finger are changed. Thus, rippling appears on a screen of the LCD apparatus, and a display quality is deteriorated.

This patent is subject to a terminal disclaimer.

Display panel, display apparatus having the same, and method thereof


Systems and methods for metadata compaction in a distributed storage system with a file system interface are described. A file system interface and an object storage system interface use a metadata index for mapping object identifiers from the object storage system to location identifiers for the file system. When the metadata index includes a number of entries for continuous data blocks with overlapping intervals, a defragmentation operation may generate a defragmented entry for a defragmentation interval overlapping the overlapping data blocks.

Often, distributed storage systems (DSS) are used to store large amounts (i.e., terabytes, petabytes, exabytes, etc.) of data, such as objects or files in a distributed and fault tolerant manner with a predetermined level of redundancy.
Some existing object storage systems store data objects referenced by an object identifier versus file systems. This can generally allow object storage systems to surpass the maximum limits for storage capacity of file systems in a flexible way such that, for example, storage capacity can be added or removed as a function of the applications, systems, and/or enterprise needs, while reducing degradation in performance as the system grows. As a result, object storage systems are often selected for large-scale storage systems.
These large-scale storage systems may need to interface with a variety of systems, platforms, and applications, some of which may not include native support for object storage. As such, file system interfaces have been developed to enable systems based on alternate storage protocols, such as network file system (NFS) protocol, to benefit from storing data in a back-end large-scale storage system. In addition to object storage systems, other distributed storage systems may use storage paradigms that do not directly map to the file systems of client systems and may utilize some level of metadata and indirection to map (i.e., metadata index) between file data and backend storage data.
Large-scale storage systems generally distribute the stored data over multiple storage elements, such as for example solid-state drives, or multiple components such as storage nodes comprising a plurality of such storage elements. However, as the number of storage elements in such a distributed storage system increase, the probability of failure of one or more of these storage elements increases, as does the probability of failure or interruption of controller, network, and interface components. To cope with these issue, distributed storage systems generally use some level of redundancy at the data, storage node, controller, interface, client, and network levels.
When accessing a large-scale distributed storage system with a file system interface on a client side and storage (backend) interface on a storage side, fragmentation may reduce read performance and increase metadata size. Furthermore, defragmentation for a file system interface of a large-scale distributed storage systems typically is a complex maintenance operation which is resource intensive.
In some configurations, there may be an ongoing need for efficient and reliable metadata defragmentation to reduce metadata size and improve performance of various storage operations through a file interface.

Metadata compaction in a distributed storage system


A SiGe HBT is disclosed. A collector region consists of a first ion implantation region in an active area as well as second and third ion implantation regions respectively at bottom of field oxide regions. Each third ion implantation region has a width smaller than that of the field oxide region, has one side connected to first ion implantation region and has second side connected to a pseudo buried layer; each second ion implantation region located at bottom of the third ion implantation region and pseudo buried layer is connected to them and has a width equal to that of the field oxide region. Third ion implantation region has a higher doping concentration and a smaller junction depth than those of first and second ion implantation regions. Deep hole contacts are formed on top of pseudo buried layers in field oxide regions to pick up collector region.

Vcesat (collector-emitter saturation voltage) is an important performance parameter of bipolar transistors, which indicates a required Vce (collector-emitter voltage) value for a transistor with a certain collector current to enter the linear region. Therefore, Vcesat has a direct impact on the DC (direct current) power consumption of a transistor when the transistor operates normally. Reducing Vcesat is a necessary means for a transistor to reduce its DC power consumption, and is especially significant for a high-voltage bipolar transistor. For a radio-frequency high-voltage SiGe HBT, in order to maintain a relatively high cut-off frequency at a high breakdown voltage, it is more practical to increase the distance between pseudo buried layers within a transistor and further to increase the breakdown voltage of the transistor through two-dimensional distribution of a depletion region of collector-base junction, rather than only to increase the thickness of a lightly doped collector region. However, the method causes problems that the increase of the lateral size of the lightly doped collector region accordingly increases the series resistance of the collector region, and thus increases the Vcesat. Especially, the lightly doped collector region under a field oxide region is shallow in silicon, which further increases the series resistance and Vcesat.

Silicon-germanium heterojunction bipolar transistor

Shanghai Hua Hong NEC Electronics Co., Ltd.


An improved support area for use with rattan furniture. The present invention provides a frame, a seat contact portion, and a back contact portion. In various embodiments, the chair includes a seat cushion that is supported by a seat support portion of the frame. The seat cushion is covered on its outside by a rattan outer layer that is attached to the seat support structure such that the rattan outer layer conforms to the shape of the seat cushion and the presence of the seat cushion is obscured by the rattan outer layer. In other embodiments, the back support portion may include a similarly configured back cushion. As a result, the present invention has the appearance and aesthetic appeal of a typical article of rattan furniture, having rattan seat and back surfaces, however the present invention provides a level of comfort that is not typically provided by rattan seat and/or back surfaces.

1) Field of the Invention
The present invention relates to furniture in general, and more particularly to furniture that utilizes seating surfaces made out of natural or synthetic rattan materials.
2) Description of Related Art
There are various characteristics that are important in the design and manufacture of furniture. For example, many articles of furniture, aside from purely decorative articles, are designed to bear a certain load, for example, the weight of a person sitting in a chair or the weight of articles supported by a bookshelf. As such, manufacturers chose structures and materials that are designed to achieve a certain level of performance. However, this performance must be balanced with other practical considerations, such as aesthetic appeal, comfort, cost, and durability.
In order to produce an article of furniture that creates a desired balance between these characteristics, many furniture manufacturers experiment with the use of different materials. One of the common materials used in the production of furniture is rattan. Rattan refers to a lightweight, tough fiber obtained in strips from the stem of a plant that can be woven together. Rattan is light, durable, and relatively strong, and can be painted or stained like hardwoods. Many furniture manufacturers use rattan to create chairs, couches, dressers, and other pieces of furniture. The strength, durability, and light weight of rattan makes it ideal for inexpensive casual furniture applications. As a result, rattan is often chosen for outdoor furniture such as patio chairs and couches.
In a continuing effort to decrease costs, some furniture manufacturers use synthetic materials to imitate the light, durable, and strong performance of rattan furniture. Because certain consumers prefer the look of woven furniture, some of these manufacturers produce furniture articles that have the appearance of natural fibers, but are actually woven strips of synthetic material. These materials are often referred to as synthetic rattan materials. For the purposes of the current specification and appended claims, the term "rattan" will be used to refer to both natural and synthetic rattan materials.
Because of cost considerations and the strength of a web of rattan material, a typical rattan chair uses a single web of woven material to produce the support portions (the seating and back surfaces). However, these portions can be very firm and thus the aesthetical appeal of rattan seating and back surfaces may be compromised by a lack of comfort. To accommodate these concerns, some furniture manufacturers include a decorative cushion that may be placed on top of the support portions. However, some consumers complain that the cushions obscure the aesthetic appeal of the rattan surfaces.
Therefore, there is a need for an improved support portion for use with rattan furniture. The support portion should provide improved comfort, while maintaining the aesthetical appeal of the rattan furniture. The improved support portion should be simple and cost effective.

Article of rattan furniture having a seat support cushion


A tightening structure for locking, comprises a nut, a bolt, and a washer with a hole through which an axis of the bolt passes. To enable the structure to lock more firmly, a recessed part symmetrical with respect to an axis, and having a generally trapezoidal shape in cross section, is formed in the nut, and a projection, symmetrical with respect to an axis, and having a generally trapezoidal cross section is formed on the washer. The hole in the washer is eccentric to the projection of the washer.

Major problems have been encountered in the past in maintaining locking engagement of the bolt and nut of a fastener assembly after the bolt and nut are tightened. In order to solve these problems, a washer is generally used between the bolt and the nut. For example, pages 45 to 46 of "Story of Screw" (author: Akira Yamamoto, Published by Zaidanhojin Nihonkikakukyokai, on Oct. 30, 1990) disclose a technique using a plane washer or spring washer. Laid-open Japanese patent publication Tokukaihei1-182614 discloses a special form of washer adapted to a spherical surface.
In the above-identified tightening structures, the resulting locking effect after tightening the bolt and the nut, is insufficient, and unlocking between the bolt and nut occurs inevitably. Therefore, this invention has been created in order to solve this problem and provide a tightening structure which can perform the function of locking more firmly, as well as strengthen the resulting joint after tightening of the bolt and nut.


There are disclosed novel avermectin compounds having a cleaved furan ring and a hydroxy group in the 8a position. Processes for preparing these novel compounds are also disclosed. These compounds have utility as anti-parasitic agents and as insecticides against agricultural pests.

The term avermectin (previously referred to as C-076) is used to describe a series of compounds isolated from the fermentation broth of an avermectin producing strain of Streptomyces avermitilis and derivatives thereof. The morphological characteristics of the culture are completely described in U.S. Pat. No. 4,310,519. The avermectin compounds are a series of macrolides, each of which is substituted thereon at the 13-position with a 4'-(.alpha.-L-oleandrosyl)-.alpha.-L-oleandrose group. The avermectin compounds and the instant derivatives thereof have a very high degree of anthelmintic, insecticidal and anti-parasitic activity.
Also included in the prior art are certain synthetically modified avermectins such as 22,23-dihydro avermectin B1a/B1b, also known as ivermectin.
The avermectin series of compounds, which are isolated from a fermentation broth, have the following structure: ##STR1## wherein R is the 4'-(.alpha.-L-oleandrosyl)-.alpha.-L-oleandrose group of the structure: ##STR2## and wherein the broken line indicates a single or a double bond;
R.sub.1 is hydroxy and is present only when said broken line indicates a single bond;
R.sub.2 is iso-propyl or sec-butyl; and
R.sub.3 is methoxy or hydroxy.
There are eight different major avermectin natural product compounds and they are given the designations A1a, A1b, A2a, A2b, B1a, B1b, B2a and B2b based upon the structure of the individual compounds.
In the foregoing structural formula, the individual avermectin compounds are as set forth below. (The R group is 4'-(.alpha.-L-oleandrosyl)-.alpha.-L-oleandrose):
______________________________________ 22,23 R.sub.1 R.sub.2 R.sub.3 ______________________________________ A1a Double Bond -- sec-butyl --OCH.sub.3 A1b Double Bond -- iso-propyl --OCH.sub.3 A2a Single Bond --OH sec-butyl --OCH.sub.3 A2b Single Bond --OH iso-propyl --OCH.sub.3 B1a Double Bond -- sec-butyl --OH B1b Double Bond -- iso-propyl --OH B2a Single Bond --OH sec-butyl --OH B2b Single Bond --OH iso-butyl --OH ______________________________________
The avermectin compounds are generally isolated as mixtures of a and b components. Such compounds differ only in the nature of the R.sub.2 substituent and the minor structural differences have been found to have very little effect on the isolation procedures, chemical reactivity and biological activity of such compounds.
The milbemycin compounds, which have a methyl or ethyl group at the 25-position and lack the 13-disaccharide group are also starting materials for the instant compounds. They are disclosed in U.S. Pat. No. 3,950,360.

Avermectins with a cleaved furan ring and an 8a hydroxy group


Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer.

For a conventional light-emitting diode (LED) structure, the device efficiency rises as the operating current increases, but when the operating current increases and reaches a certain value, the device efficiency declines. Such efficiency declination phenomenon is called "efficiency droop". As shown in FIG. 1, the external quantum efficiency of the LED device reaches the highest point at a current density of about 10 A/cm2, and when the current density increases, the external quantum efficiency of the device declines dramatically. This efficiency droop phenomenon limits the efficiency of the LED under a large current.
The cause of this efficiency droop phenomenon is still inconclusive, but it is generally believed that it is due to the mismatch of mobility of the electrons and holes in a high-current operation, so the electrons in the multi-quantum well (MQW) of the light-emitting layer overflows easily to the p-type semiconductor layer, and electrons are unevenly distributed in the multi-quantum well. Most of the electrons are concentrated in one or several quantum wells near the p-type semiconductor layer, so the holes that are injected into the light-emitting layer are insufficient, and the device efficiency declines in a high-current operation.
To solve the problem of the uneven distribution of carriers in the multi-quantum well of the light-emitting layer, a super-lattice active layer is adopted. That is, the thickness of the barrier layer in the multi-quantum well structure of the light-emitting layer is designed to be thin. When the thickness of the barrier layer is so thin that the electrons and holes are able to tunnel through the barrier layer because of the formation of the mini-band in the principles of quantum mechanics, a more uniform distribution of carriers is achieved, which is helpful to solve the above-mentioned efficiency droop problem.


When record marks are recorded on a recording medium while making a code symbol "1" of data by obtained coding write information according to a coding system having no DC free property correspond to every edge of the record marks, the recording is effected while inserting resynchronizing signals into the write information with a constant interval. For the resynchronizing signal either one selected between a first resynchronizing code pattern, in which the number of symbols "1" contained therein is even, and a second resynchronizing code pattern, in which the number of symbols "1" is odd, so that an accumulated charge obtained from the run length of the coded data approaches zero is used. Each of the first and the second resynchronizing code pattern contains at least a specified pattern, which doesn't meet the coding rule. The selection is effected by adding a run length switching code to the resynchronizing signal and by switching it to "0" or "1" depending on an output of a run length measuring circuit and a run length judging circuit. In this way it is possible to suppress fluctuations in the level of a reproduced signal obtained from the record marks recorded on the recording medium and to realize a stable data detection by using the original waveform detection method, by which the reproduced signal is converted into a binary signal by using a suitable slice level.

The present invention relates to an information recording method, by which write information is converted into a series of codes according to the run length limited coding rule and the series of codes is recorded while making it correspond to the positions of the lead edge and the tail edge of record marks formed in a data area on a recording medium and to an information storing apparatus using same. In particular, the present invention relates to an information recording method efficient for reducing level fluctuations of a signal reproduced in the case where data coded by using a coding rule having no DC free property are recorded on an optical disk medium and to an optical disk apparatus using same.
In an optical disk memory device, improvement in the signal-to-noise ratio of a reproduced signal and increase in the data detection window margin are effective for improving the reliability of data, i.e. reducing the error ratio. Two methods are known for converting a reproduced signal into a binary signal. By a first method a detection signal obtained from a record mark recorded on an optical disk is converted into a binary signal by using a certain slice level (hereinbelow denoted by original waveform detection method, but called also amplitude detection method), while by a second method a position corresponding to a code is detected by differentiating the detection signal (hereinbelow denoted by differentiation detection method, but called also peak detection method).
By a method, by which a code is made correspond to the center of the record mark, generally the detection signal from an optical head is first-order-differentiated and a zero cross point of a first-order-differentiation signal thus obtained is detected (hereinbelow denoted by mark position recording method). Further by a method, by which the code is made correspond to the two edges of the record mark (hereinbelow denoted by mark length recording method), generally the detection signal from an optical head is second-order-differentiated and a zero cross point of a second-order-differentiation signal thus obtained is detected.
The decrease in the signal-to-noise ratio produced when the reproduced signal is converted into the binary signal is smaller by the original waveform detection method. In the case of the differentiation detection method, since a frequency band is increased in the neighborhood of a differentiation constant (cut-off frequency), it is necessary to secure an originally satisfactorily good signal-to-noise ratio.
On an optical disk, apart from user data, specified data such as address data indicating the position on the disk, a pattern for pulling-in a PLL (Phase Locked Loop) for generating a reproduction clock, resynchronizing patterns inserted with a certain interval according to a predetermined format, etc. are recorded. Generally the address information is previously built-in in the form of pits at the fabrication of the disk. An example of such a format is determined by an ISO norm for a disk of continuous servo system having a diameter of 130 mm.
Here explanation will be made, taking this ISO norm as an example. For the coding system the mark position recording system using 2-7 RLL (Run Length Limited) coding is adopted and a one-byte resynchronizing mark is inserted for every 20 bytes of data. The resynchronizing mark (RESYNC) has a function of correcting the synchronization, in the case where the phase relation between the reproduction clock generated by the PLL and reproduced data is deviated by 1 bit or more because of defects, etc. on the disk. The number of data bytes between two adjacent resynchronizing marks is set within an extent, where errors can be corrected by the ECC (Error Correction Code). For this ISO format, since the mark position recording system is used and the position of the mark is detected by the differentiation detection method, no DC free property is required. Further only one sort of resynchronizing marks is used and no change thereof depending on the data pattern is effected.

Information recording method and optical disk apparatus using same


Methods are disclosed for forming precision, fiber optic interfaces, and a recision, fiber optic interface is disclosed in accordance therewith, an electroformed disk is disclosed to provide fiber alignment, and electrical discharge machining (EDM) is disclosed to provide accurate angular alignment of optical fibers at a planar optical interface. In one method embodiment, a combination of EDM, an alignment bushing and an electroformed disk are used to fashion a precision multi-channel fiber optic interface, and in one interface and method embodiment, two electroformed disks are used to provide a precision, multi-channel fiber optic interface.

(1) Field of the Invention
This invention is directed to fiber optics, and more particularly, to a novel, precision multi-channel fiber optic interface and method.
(2) Description of the Prior Art
One technique has been developed through the prior art to align several multimode optical fibers across an interface. The technique involves the precision drilling of holes for the fibers into a precision alignment bushing. Fiber alignment across an interface is maintained by precision pins which are anchored in other precision holes in the alignment bushing. The optical fibers are polished flush with the surface of the alignment bushing. When two such planar interfaces are mated fiber-to-fiber alignment is accomplished by precision alignment pins that connect the alignment bushings. The optical fibers that have been used have a 140 .mu.m outside diameter and a 100 .mu.m core diameter. As will be appreciated by those skilled in the art, drilling holes for these fibers is a technical challenge. The holes must have a large length/diameter ratio to assure that light will not exit from the fiber face at an angle. Conventional drilling technology, however, does not provide a sufficient length/diameter ratio for accurate fiber alignment. For the multimode optical fibers with an outside diameter of 125 .mu.m and a core diameter of 62.5 .mu.m that are becoming a new Navy standard, a more accurate alignment technique and precision optical interface are required.

Precision multi-channel fiber optic interface and method

The United States of America as represented by the Secretary of the Navy


A performance measure of an ATR is made from ancillary target data and the ATR output. A parameter of the ATR is varied to determine the change an ATR performance due to the parameter variation. Separate performance in the form of a quadratic equation models provide performance as a function of parameter and metrics. The performance model is partially differentiated with respect to the parameter. The partial differentiation allows solution for the estimated metric.

The present invention relates to signal and image processing systems such as Automatic Target Recognition (ATR) systems used for target classification and target tracking and Automatic Object Recognition (AOR) systems. The input to these ATR systems could be signals or images of scenes collected from Electro-Optical (EO) sensors, or Radar (RF) sensors or other signal or image generating sensors.
In signal and image processing systems, the signal metrics are the measures of the quality of the signal and consequently they convey information about the scene, the objects in the scene, the sensor, the signal transmission path, and the environmental conditions under which the signal was obtained. These metrics may be divided into the classes of Global Metrics, Local Metrics and Object or Target Metrics. The scene complexity is an example of the Global Metrics. An example of the local metrics is the contrast ratio between objects in the scene and their immediate backgrounds. Target entropy is an example of the object metrics.
It is to be understood that the signal metrics is a more generic term than image metrics and that the principles of the present invention apply to both signal metrics and image metrics even though specific examples will be given in terms of image metrics. In the past the approach used to arrive at the image metrics was a manual approach as illustrated in FIG. 1. In this approach one examines the signal or image for the case of two-dimensional signals and through the use of extensive ground truth information identifies all of the knowable aspects of the scene. The knowable aspects include, for example, the location of the objects in the scene, the type targets or objects and their orientation, the range from the sensor to the objects and to the various regions in the image and other knowable aspects of the scene. The image metrics are then computed in an organized fashion by examining each object separately. An example of a local metric is Target Interference Ratio (TIR) squared. The approach to calculating (TIR) begins by placing a minimum bounding rectangle (MBR) around each object. The metric (TIR).sup.2 is defined as the squared ratio of the difference between the average of target intensity value and the average intensity value of the background as obtained in a rectangular box twice the size of the MBR that surrounds the MBR, and the variance of the intensity values of the background. It should be obvious that to obtain the metrics as just described requires tedious and extensive ground truthing and manual computation. These requirements make the manual computation tedious in the best situations where the extensive ground truth data is available. In the real world situation the above described approach is impractical because the location of the targets and their identities are unknown.
In the past large sets of data have been collected with AOR systems; however it has not been practical to communicate the important features of this data to other users of AOR systems so that useful collected data could be exchanged. This is because the data has not been characterized. In the past this characterization could only be done by the tedious ground truthing process already described.


Systems and methods for providing a SIM module for an information handling system, such as desktop computer, notebook computer or other type of portable information handling system, etc. An information handling system may be assembled so that a SIM module need only be installed into the information handling system when SIM functionality is required to support a GSM type WWAN card, and not installed when such WWAN capability is not needed.

As the value and use of information continues to increase, individuals and businesses seek additional ways to process and store information. One option available to users is information handling systems. An information handling system generally processes, compiles, stores, and/or communicates information or data for business, personal, or other purposes thereby allowing users to take advantage of the value of the information. Because technology and information handling needs and requirements vary between different users or applications, information handling systems may also vary regarding what information is handled, how the information is handled, how much information is processed, stored, or communicated, and how quickly and efficiently the information may be processed, stored, or communicated. The variations in information handling systems allow for information handling systems to be general or configured for a specific user or specific use such as financial transaction processing, airline reservations, enterprise data storage, or global communications. In addition, information handling systems may include a variety of hardware and software components that may be configured to process, store, and communicate information and may include one or more computer systems, data storage systems, and networking systems.
Information handling systems are often configured as portable devices. One popular type of portable information handling system is a notebook computer. As wireless communications become more prevalent in our society, offering an integrated wireless wide area network (WWAN) solution in a notebook computer is a logical progression. While this feature is highly desirable, the adoption rate of WWAN capability in notebook computers will likely be small, i.e., less than about 5% of new notebook computers will likely be configured with WWAN capability when it is initially offered. Components to support WWAN capability in a notebook computer add to the overall cost of the notebook computer. For example, a specific Global System for Mobile communication GSM (HEDGE) type WWAN card requires installation of a SIM card socket to support SIM smart card functionality. At the present time, this socket and associated electrostatic discharge (ESD) protection components add cost to the assembly, but are only needed when a notebook computer is configured with the GSM type WWAN card.
It is known to provide a motherboard of a notebook computer with a video card connector capable of interconnecting with a mating connector of more than one type of video card that may be specified by a notebook computer customer. During assembly of the notebook computer, a video card corresponding to the particular type of video card specified by a customer order for the notebook computer is selected and assembled to the notebook computer motherboard by interconnecting the motherboard connector and the mating connector of the video card.

Systems and methods for implementing subcriber identity modules


A method, system, and program for decoding cached compressed data. Compressed data is received and decoded. An error is detected while decoding a first location in the compressed data. A reentry data set is accessed having a pointer to a second location in the compressed data following the first location and decoding information that enables decoding to start from the second location. The second location in the compressed data is accessed and the decoding information in the accessed reentry data set is used to continue decoding the compressed data from the second location.

1. Field of the Invention
The present invention relates to a method, system and program for error recovery while decoding compressed data.
2. Description of the Related Art
Digital images may use one or more bits to describe the color intensity at each pixel. The term "pixel" as used herein refers to one or more intensity inputs or bit values at a data point that represents data to be rendered (i.e., printed, displayed, etc.), where the data to be rendered may include, but is not limited to, images, text, composite images, graphs, collages, scientific data, video, etc. A pel is a picture element point that may be expressed with one bit. If only one bit is used to express the intensity, then the image is a bilevel image where there are two possible intensity values per pixel, such as black and white or full saturation and no intensity. Digital monochrome images that allow for more than two intensities per pixel express the intensities as shades of grey.
Most systems compress image data before transmitting the data to an output device, such as a printer or display, that renders the image data. The output device must decode or decompress the compressed image to output to print or otherwise render. Compressed images may also be archived and then at some later time transmitted to an output device for decompression and rendering, e.g., printing or displaying. For instance, an Adaptive Bi-Level Image Compression (ABIC) algorithm of the prior art would sequentially encode each bit of image data by using the seven nearest neighbor bits and a probability distribution that is calculated based on previously coded data. In current implementations, the ABIC decoder maintains a history group of bits comprising the last N+2 decoded bits. In certain current implementations, the ABIC decoder uses seven of the bits, including the last two decoded bits and bits in the history range from the (N−2) bit to the (N+2) bit. These are the seven nearest bits in the raster image. Details of using the ABIC algorithm to encode and decode data are described in the IBM publication entitled "A Multi-Purpose VLSI Chip for Adaptive Data Compression of Bilevel Images", by R. B. Arps, T. K. Truong, D. J. Lu, R. C. Pasco, and T. D. Friedman, IBM J. Res. Develop., Vol. 32, No. 6, pgs. 775-795 (November 1988) and the commonly assigned U.S. Pat. No. 4,905,297, which publication and patent are incorporated herein by reference in their entirety.
If an error is encountered, the data used by the decoder to decompress the compressed data, including neighbor bits and a probability distribution, may be corrupted. To recover from an error, the decoder must begin decoding from a beginning point, such as the beginning of the current image being decompressed. Prior art encoding schemes also encode resynchronization data into the data stream to allow for decoding to begin at a resynchronization point. For instance, the compression schemes for Group 3 facsimile machines, including Modified Huffman (G3 MH) and Modified READ (G3 MR), which were finalized in the CCITT Study Group XIV in the late 1970s, encode end-of-line (EOL) codes into the data to allow resynchronization from the one-dimensional EOL points.
The G3 MH scheme independently codes horizontal runs of black or white pels alternated across a page. Every compressed line of the black/white facsimile image ended with an unique end-of-line (EOL) code consisting of at least 10 (or eleven) zeros followed by a one. No valid combination of run codes generated more than nine (or ten) zeros in a row. This EOL code allows for resynchronization after every compressed line. The two-dimensional G3 MR algorithm encodes each line with an EOL code followed by a tag bit specifying whether the next line was coded in one or two dimensions.
These early Group 3 digital facsimile machines had no error correction. The receiver could not request a retransmission. The receiver could resynchronize and recover from errors at the next one-dimensionally coded line. Because the standard size facsimile page had 1728 pels/line (i.e. 216 bytes/line) this synchronization occurred quite frequently. Further, there is no standardized technique for handling incorrect lines. Some machines print the bad data generating streaks across the page. Other machines skip the erroneous lines and output squished lines of text. Still other machines replicate the previous line in order to maintain consistent character height.
The CCITT Group 4 digital facsimile machines developed in the 1980s utilized the Modified Modified READ (G4 MMR) data compression algorithm. Instead of periodically coding lines one-dimensionally, the G3 two-dimensional coding scheme is used on every line without any EOLs. Since these machines were designed for use on the digital data networks, the transmission was expected to be error-free so error recovery resynchronization codes are not encoded into the data during compression.
The Joint Photographic Experts Group (JPEG) international data compression standard designed for continuous-tone (contone) pictures provides for optional resynchronization codes that may be encoded into the data. These resynchronization codes are defined as Restart Markers (RSTm 0xFFD0-0xFFD7) and can be used to separate independently coded blocks of data. The Define Restart Interval (DRI0xFFDD) marker specifies how many blocks are coded between Restart Markers. If Restart Markers are not encoded into the data, then decoding must restart at the beginning of the JPEG image, from the Start of Scan marker.
Thus, with all the above techniques, resynchronization codes are encoded into the actual compressed data to allow for error recovery while decoding at a point within the compressed data. Notwithstanding, there is a continued need in the art for improved techniques for allowing for error recovery during digital data transmissions.

System and program product for error recovery while decoding cached compressed data

International Business Machines Corporation


Apparatus for engaging interlocking apertures provided on the bottom of intermodal cargo containers to permit vertical stacking of the containers. The apparatus is in the form of integrated interbox connectors movably connected to the containers and positionable between in a stored position situated within the walls of the container and a connecting position situated on top of the roof of the container to engage the interlocking apertures of a vertically adjacent container. A pin is provided for securing the interbox connectors situated in the connecting position to said interlocking apertures provided on the bottom of said vertically adjacent container.

The present invention relates to cargo carrying containers suitable for use in multi-mode transportation of freight or cargo by ship, rail, or overland truck. Examples of intermodal cargo containers are found in U.S. Pat. No. 3,085,707; 3,646,609; 4,212,405; 4,844,672; and, 5,205,428.
Intermodal cargo containers generally are constructed to certain standard dimensions and have structural features that minimize handling problems and allow for the stacking of containers, particularly when used in a ship or rail mode. Certain changes in overall width, length and height have been adopted from time-to-time for certain newer style containers, but such changes in overall dimension have only been made in such a manner to accommodate stacking arrangements with older style containers. For example, the intermodal containers constructed as disclosed in U.S. Pat. No. 3,085,707 were built at a standard length of 40 feet. The containers of U.S. Pat. No. 3,646,609 were intended to be longer than 40 feet in length, but were fitted on top and bottom with an intermediate set of castings which are connected together with a structural frame to allow the longer containers to be stacked and lifted at these intermediate points. The required thickness of the floor of the container necessary to bear the load is generally sufficient to enclose the castings which are employed on the bottom of the container for stacking purposes. On the other hand, the intermediate castings which are situated at the top of the containers as disclosed in U.S. Pat. No. 3,646,609 are considerably larger than either the thickness of the wall or roof and thus intrude into the cargo area of the container. This intrusion into the cargo area of the intermediate top castings has many disadvantages, and attempts have been made to reduce or eliminate this intrusion.
Certain newer containers which have sought to maximize the inside height, such as that disclosed in U.S. Pat. No. 5,205,428, have avoided this intrusion by eliminating the intermediate top casting which would permit stacking and replaced it with a side lift design intended to interact with either pin or wedge type handling devices. Such handling devices still maintain the existing lifting locations at the 40 foot apart intermediate lift points of the containers, but do not permit stacking at these locations. As such, these units can generally only be included in a stack of containers as the top unit thus reducing the flexibility of the unit and creating certain logistics problems for operators of intermodal container terminals.
One means of solving this problem is to create a stacking frame at each extreme end of the container and install conventional stacking castings to allow interlocking of the units together using conventional interbox connectors. However, when this is done, the stacking castings again intrude into the top of the cargo area at the front and rear corners. Such intrusion has the effect of reducing the usable inside length of such a container by as much as 12 inches which is not desirable. The present invention is an alternative solution which avoids any substantial intrusion into the enclosed cargo area while at the same time permitting the container to be situated at any point in a stack of longer containers.

Intermodal container with integrated interbox connectors


The present disclosure describes various embodiments of a structure for a composite light regulating film, methods of using the composite light regulating film, and for methods of making a composite light regulating film. The composite light regulating film can include particles and an elastomer matrix. The composite film is configured to modify in response to a force.

Commercial and residential buildings may include windows to allow heat and light to pass into the building. However, these windows may let heat escape from the buildings in the winter time while unnecessarily heating up the buildings in the summer time. Shades or drapes may be used to cover the window and help regulate the temperature in the buildings. Alternatively, other expensive and unreliable window technology may be used for the windows in the buildings.

Methods and structures for light regulating coatings

UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.


Herein described is a system and a method of detecting and correcting data bit errors using a sequence of one or more codewords transmitted through a communication channel characterized by intersymbol interference. Each of the one or more codewords incorporates one or encodes one or more parity bits. The codewords are processed by a Meta-Viterbi detector that utilizes a Meta-Viterbi algorithm. The Meta-Viterbi detector comprises an event weight processor, a computational circuitry, a parity syndrome calculator, and an error correction circuitry. The Meta-Viterbi detector receives an output generated from a Viterbi detector having 2s states and processes the received output using a trellis diagram having 2t states.

It is well known that the Viterbi algorithm may be used for the maximum likelihood detection of data. In the absence of parity encoding, the partial response maximum likelihood/noise predictive maximum likelihood (PRML/NPML) detection of data can be accomplished by using a Viterbi detector with 2s states. When using t bits of parity with the Viterbi algorithm, maximum likelihood decoding for a partial response system would require a Viterbi detector with 2s+t states. Unfortunately, the post-processor schemes that are available perform sub-optimal detection for partial response systems with parity. These schemes may combine the Viterbi detector and a post-processor. The Viterbi detector utilizes 2s states for de-convolving the data out of the partial response signaling without taking parity bits into account while a post-processor may utilize t parity bits to locate the error events in the Viterbi output. For single bit parity codes, conventional post-processing schemes perform well, but for multiple bit parity schemes, such as when using a t bit parity scheme, the performance in bit error rate and, especially, in error correction code failure rate suffers significantly from that of a 2s+t state Viterbi detector.
The limitations and disadvantages of conventional and traditional approaches will become apparent to one of skill in the art, through comparison of such systems with some aspects of the present invention as set forth in the remainder of the present application with reference to the drawings.

Meta-Viterbi algorithm for use in communication systems