A locking assembly for securing a rod in a polyaxial bone anchoring device includes a first locking element having a first end, a second end, an outer surface with an external advancement structure, an inner wall, an internal advancement structure on the inner wall, and an engagement portion for a tool, and a second locking element having a first end configured to be oriented towards the first end of the first locking element, an opposite second end, an outer surface with an external advancement structure configured to cooperate with the internal advancement structure of the first locking element, and a portion at the second end having a width greater than a greatest width of the external advancement structure of the second locking element, wherein the second locking element is configured to move axially relative to the bone anchoring device at a speed different than the first locking element.

1. Field of the Invention
The invention relates to a locking assembly for a polyaxial bone anchoring device for use in spinal or trauma surgery. The polyaxial bone anchoring device includes a bone anchoring element with a shank to be anchored in a bone and a head. The head is pivotably held in a receiving part and can be fixed at an angle relative to the receiving part by applying pressure onto the head via a pressure element. The receiving part has a recess with a substantially U-shaped cross-section for receiving a rod. Further, the locking assembly includes a first locking element that cooperates with the receiving part and is configured to fix the rod in the receiving part, and a second locking element configured to be arranged in the first locking element that is configured to fix the head via the pressure element. The first locking element has an engagement structure for a drive tool, and the second locking element is driven upon rotating the first locking element, so that the head and the rod can be fixed in a sequential manner using a tool with a single drive portion.
2. Description of Related Art
US 2003/0100896 A1 describes a bone anchoring device with a shank and a receiving part connected to it for connecting to a rod. The receiving part has a recess having a U-shaped cross-section for receiving the rod with two open legs and an internal thread on the open legs. A locking assembly is provided comprising a nut member with an external thread that cooperates with the internal thread of the legs and a set screw. The nut member has on one end slits for engagement with a screw tool. The shank has a spherically-shaped head that is pivotably held in the receiving part. A pressure element is provided that exerts pressure onto the head when the nut member is tightened. By tightening the set screw the rod is fixed in the receiving part. Hence, the rod and the head can be locked independently from each other.
U.S. Pat. No. 7,972,364 describes a locking assembly for securing a rod in a rod receiving part of a bone anchoring device that includes a first locking element and a second locking element. With the first locking element and the second locking element the head of the bone anchoring element and the rod can be locked independently using a tool with two drive portions.

Locking assembly for a polyaxial bone anchoring device


The perimeter comprises a display device 1, infrared light-emitting diodes 2, a CCD camera 3, a half mirror 4, an image processing device 5, a computer 6, and an operating switch 7. The computer 6 shows a fixed eye-target for fixing a line of sight of a subject and a light stimulus eye-target for giving a light stimulus to a pupil of the subject at a plurality of predetermined positions on the display device 1. The infrared light-emitting diodes 2 irradiate infrared light to an eye of the subject. The CCD camera 3 takes an image of the eye of the subject using the infrared light irradiated from the infrared light-emitting diodes 2. The image processing device 5 detects a pupil diameter of the subject based on the image taken by the CCD camera 3. The computer 6 measures a visual field of the subject based on the change of the pupil diameter of the subject detected by the image processing device 5. The feature of the present invention resides in that the display device 1 comprises a display device capable of adjusting background luminance of a screen and brightness of the light stimulus eye-target separately.

Examination of visual field (namely, a perimetry) is performed to diagnose a constriction of visual field which is a symptom of glaucoma and so on. In the conventional perimetry, the visual field of the subject is measured by showing an eye-target at a specific point in front of an eye of a subject and having the subject answer a question whether he or she can see the eye-target. Such an examination is a subjective examination based on a subjective answer of the subject, and a visual field range of the subject is identified by measuring the visual field multiple times while changing the showing position of the eye-target one after another. In such a subjective examination, there was a problem that an inspection result is easily swayed by a physical condition and concentration and so on of the subject and an accurate examination can not be done. Furthermore, because a series of operations of showing the eye-target and then having the subject answer have to be repeated many times, there are also problems that it takes a long time to do the inspection and a burden on the subject is large.
Folia opthalmologica Japonica (p. 733-737, Volume 49, Number 9, 1998) discloses a perimeter capable of performing an objective perimetry which does not depend on the subjective answer of the subject. In this perimeter, in order to measure the visual field of the subject, a fixed eye-target is projected on a screen provided in front of the eyes of the subject, and a light stimulus eye-target is projected at a plurality of positions on the screen one after another in a condition where the subject is gazing at the fixed eye-target so as to give a light stimulus to a retina of the subject, and a miotic response of the pupil by the light stimulation (namely, a pupillary light reflex) is detected.
Furthermore, Japanese Non-examined Patent Publication No. 5-146404 and Japanese Non-examined Patent Publication No. 2004-216118 disclose a perimeter which objectively measures the visual field of the subject by showing a fixed eye-target and a light stimulus eye-target using a light emitting device such as a light-emitting diode and detecting the presence or absence of the pupillary light reflex at the time when the light stimulation is given to the subject.
In such an objective perimeter, the darker the background luminance to the light stimulus eye-target is, the easier the detection of the pupillary light reflex becomes. But, when the background luminance is too dark, the light of the light stimulus eye-target is scattered, and therefore the light stimulus is not given to an accurate position of the retina of the subject. Furthermore, it takes a long time for the pupil of the subject to adapt to the darkness of the background, whereby the inspection time becomes long. On the other hand, when the background luminance is too bright, the brightness difference between the background and the light stimulus eye-target becomes small, and the pupillary light reflex also becomes small, and therefore, the detection of the reaction becomes difficult. Furthermore, it is preferable that the size of the light stimulus eye-target and stimulus intensity thereof are changed according to the subject.
As mentioned above, in the objective perimeter, it is preferable that the background luminance, the brightness of the eye-target, and the size of the eye-target and so on are adjustable freely. But, in the above mentioned conventional perimeter, because the eye-target is projected on a screen or the light stimulus eye-target is shown by using a light-emitting diode, there was a problem that it is not possible to easily adjust the background luminance, the brightness of the eye-target, and the size of the eye-target.


In a spindle conveyor for conveying workpieces, in particular vehicle wheels, there is a rail system which includes at least one supporting rail. A plurality of transport carriages each have a chassis that is able to move on the supporting rail in a transporting direction and a carrying device for workpieces carried along by the chassis. The carrying device includes at least one workpiece spindle for receiving the workpiece and which is pivotable, at least in a particular section of the spindle conveyor, between a conveying position and a particular position different from the conveying position wherein the workpiece spindle is tilted in the particular position with respect to a vertical plane (V) which extends parallel to the transporting direction. Also, a plant for treating workpieces having such a spindle conveyor which conveys the workpieces through the plant.

A workpiece spindle is understood in this case to be any spindle-shaped element that can receive a workpiece, either directly or via a further mounting. If appropriate, a carrying basket for small parts can also be fastened to a workpiece spindle, which small parts, for their part, are placed loosely in this carrying basket. Such a workpiece spindle is normally approximately one meter long, but may also be only a few centimeters long, depending on the type of workpieces to be conveyed.
Spindle conveyors, of the type stated at the outset, that are known from the market are used, in particular, to convey vehicle wheels through successive treatment stations of a coating installation, in which the vehicle wheels are provided with a surface coating in a plurality of treatment steps. In such cases, the workpiece spindles are aligned vertically.
In the treatment stations, the workpiece spindles of the transport carriages also become wetted with coating materials, for which reason these transport carriages have to be cleaned from time to time.
For this purpose, in the case of spindle conveyors known from the market, and plants of the type stated at the outset, the transport carriages are routed through a cleaning station, in which the workpiece spindles are sprayed with a cleaning solution, from the side. Cleaning solution loaded with coating material may then drip down on to the running gear of the transport carriages that is located underneath, or on to the rail system, resulting in after-soiling. This, in turn, increases the amount of servicing and cleaning work, since this soiling, likewise, must be removed.
Alternatively, soiled workpiece spindles are detached from the transport carriages and exchanged for cleaned workpiece spindles.
It is therefore an object of the invention to create a spindle conveyor and a plant of the type stated at the outset, in which there is a reduced risk of after-soiling of the components, in particular in the cleaning operation, in particular if the workpiece spindles remain on the transport carriage during cleaning.

Spindle conveyor and plant for treating workpieces having such a spindle conveyor


A method of forming a device associated with a via includes forming an opening or via, and forming at least a pair of conducting paths within the via. Also disclosed is a via having at pair of conducting paths therein.

The semiconductor industry has seen tremendous advances in technology in recent years that have permitted dramatic increases in circuit density and complexity, and equally dramatic decreases in power consumption and package sizes. Present semiconductor technology now permits single-chip microprocessors with many millions of transistors, operating at speeds of several gigahertz (GHz), to be packaged in relatively small, air-cooled semiconductor device packages. A by-product of such high density and high functionality in semiconductor devices has been an ongoing pressure to further miniaturize the individual circuit features within an integrated circuit and packaging substrate, such as a microprocessor or a chip set component or the like.
There are many different features within an integrated circuit packaging substrate. One feature is a via. An integrated circuit packaging substrate contains several levels of circuitry. A via is a vertical opening lined with a conductive material that is used to connect a conductor trace on one layer to the next layer. Currently, a via includes a single electrical path. Therefore, if there are multiple electrical paths between a first layer within a device to a second layer within a device, there are a corresponding number of vias. A via can also provide a conductive path from a layer within a device, such as an integrated circuit, to an exterior surface.

Method of embedding passive component within via


A color image processing apparatus which processes an original image data line-by-line. The color image processing apparatus includes a detector for detecting a portion in a line where an original image exists. In accordance with an output of the detector, a line-by-line determination is made as to whether the original image is a color image or a monochromatic image. The apparatus further includes a processor for processing the image of the original image in accordance with the result of the determination.

1. Field of the Invention
The present invention relates to a color image processing apparatus, and more particularly to a color image processing apparatus capable of automatically discriminating whether the original image is a black-and-white original or a color original.
2. Related Background Art
The present applicant already proposed, for example in the U.S. patent applications Ser. No. 271,362 (now U.S. Pat. No. 4,953,012, issued Aug. 28, 1990) and Ser. No. 416,587, (now abandoned) a technology for use in a color copying apparatus, for automatically discriminating whether the original image is a black-and-white original or a color original, and executing black monochromic copying in case of a black-and-white original, or color copying with four colors of yellow, magenta, cyan and black in case of a color original. This technology allows to reduce the copying time and the copying cost.
However such conventional technology is incapable of exact discrimination for originals or areas of undefinite shape, because the discrimination is conducted over the entire area of the original.
Also in a structure in which the original image is pre-scanned prior to the image reading and the black monochromic copying or color copying is conducted according to the result of discrimination conducted on the output of said pre-scanning, the pre-scanning occupies a consideration portion of the operating time and deteriorates the efficiency of operation, particularly in case of handling plural original documents with an automatic document feeder, because the pre-scanning is conducted over the entire area of the original.
Also since the discrimination is conducted over the entire area of the original, in case of dividedly copying an original containing both a color image and a black-and-white image, reduction in the copying time or the copying cost cannot be achieved because a color process is conducted also on the black-and-white image.
In consideration of the foregoing, an object of the present invention is to achieve discrimination of a black-and-white original image or a color original image in efficient and precise manner.
Another object of the present invention is to achieve satisfactory discrimination of color or black-and-white image in an original or an area thereof of an arbitrary shape.
Still another object of the present invention is to achieve satisfactory discrimination of color or black-and-white image in each of plural originals or plural image areas.
Still another object of the present invention is to achieve secure discrimination of color or black-and-white image without waste in time.

Color image processing apparatus capable of detecting a color or monochromatic image


Interferant eliminating analyte sensors and sensing process prevent erroneous assays. Glucose electrodes were coated with an oxidizing enzyme (peroxidase) which allows hydrogen peroxide to selectively oxidize ascorbate, urate, bilirubin, and acetaminophenol in the presence of glucose. Hydrogen peroxide may be added to the assayed solution or generated in situ. The oxidizing enzyme was prevented from causing undesired reduction currents at the glucose electrode by preventing contact of the oxidizing enzyme with the glucose electrode, or by increasing the applied voltage.

1.) Field of the Invention
This invention relates to an improved sensor and sensing system for assaying the concentration of an analyte in a solution. More particularly, the sensor and sensing system eliminate interferants by selectively oxidizing the interferants before such interferants interfere substantially with the assay.
2.) Description of the Prior Art
Glucose is typically assayed by detecting the concentration of glucose at enzyme electrodes using glucose oxidase. Because of overlapping oxidation potentials, existing enzyme electrode sensors cannot discriminate between glucose and other electrooxidizable species (hereafter "interferants") such as ascorbate, urate, bilirubin, cysteine, and acetaminophenol. Consequently, these interfering species, and other species which also have overlapping oxidation potentials, prevent the accurate analysis of glucose levels in blood samples.
Persons skilled in the art have searched for ways to prevent the interferants from affecting the accurate analysis of glucose in blood solutions. U.S. Pat. No. 4,098,574 to Dappen appears to disclose that interferants of fluoride ion with glucose analysis performed in integral multilayer elements can be reduced or eliminated by buffering the reagent composition contained therein to a pH between 4.5 and 6.0. U.S. Pat. No. 4,247,297 to Berti et al. appears to claim a test system "highly resistant to interfering reducing substances" through the use of a test means comprising a hydrazone and 8-amino-1-naphthol-5,7-disulfonic acid.
Persons skilled in the art have also attempted to design highly specific sensors, partly in an effort to reduce the effect of interferants. U.S. Pat. No. 4,776,944 to Janata et al. appears to disclose a chemical selective sensor system which utilizes admittance modulation to detect the presence of chemicals in a fluid. Commercial variations of the glucose sensors have also utilized filtering membranes and electrostatic repulsion membranes to inhibit interferants from reaching the analyte sensing layer.
Despite the above described improvements, persons skilled in the art have not yet adequately solved the inaccuracy problems caused by interferants.


Systems and methods for performing netting of business-to-business payments for settlement of running balances between parties are provided. To that end, blockchain infrastructures allow smart contracts that may be suitable for subrogation and netting operations, and the smart contracts that facilitate the operations. Application-programming interfaces (APIs) are provided that may be used to interact with the smart contracts.

The present disclosure relates generally to methods and systems to facilitate netting of business-to-business payments using shared smart contract infrastructures. Netting entails offsetting the value of multiple positions (e.g., debt claims, credit claims, swaps) and payments due to be exchanged between two or more parties. Netting may, for example, be applied to perform subrogation operations. Subrogation refers to payment collection from a party on behalf of another party to which a debt is owed. The term smart contract refers to a distributed program that may be stored in a blockchain that may be used to digitally facilitate, verify, and/or enforce the negotiation or performance of a contract, while ensuring that the smart contract transactions are trackable and irreversible.
This section is intended to introduce the reader to various aspects of art that may be related to various aspects of the present disclosure, which are described and/or claimed below. This discussion is believed to be helpful in providing the reader with background information to facilitate a better understanding of the various aspects of the present disclosure. Accordingly, it may be understood that these statements are to be read in this light, and not as admissions of prior art.
Many organizations and enterprises offer risk management or similar services that allow customers to manage or reduce risk against uncertain loss. As an example, insurance companies may offer insurance products by which, in exchange of a regularly paid premium by a customer, the insurance company assumes liability and recovers damages incurred as a result from a loss to an insured good. The assumed liabilities often lead to creation of debt and credit claims, and origination of payments with the other parties. In many situations, the organizations may frequently have multiple debts and/or credit claims against each other, which may be originated in response to distinct, unrelated events. For example, two insurance companies that offer automotive insurance services in a particular region may be parties to several automotive accidents in which different customers were involved. As a result, the two insurance companies may have multiple debt and credit claims exchanged associated with the accidents. Subrogation payments, payments made to settle outstanding debt and credit claims, are often done in an event-by-event basis. The multi-party nature of such transactions may generate substantial accounting challenges.

United States Automobile Association (USAA)


An electronic device having a main body, an expanded element, a support element, and a latch device is disclosed. The main body has a first surface and a second surface, wherein the second surface has a first accommodating slot and a second accommodating slot. The expanded element detachably connects to the first accommodating slot and the expanded element has at least one expanded function. The support element is accommodated in the second accommodating slot and has a folded state and a support state. The latch device having a first latch element for engaging with the expanded element and a second latch element for engaging with the support element is movably connecting to the main body. When the latch device moves to a first position, the engagement with the expanded element is released. When the latch device moves to a second position, the engagement with the support element is released.

1. Field of the Invention
The invention relates to a portable electronic device, particular to a portable electronic device capable of integrating devices with different expanded functions to be engaged or released into a single latch device.
2. Description of the Related Art
With the advance of technology, portable electronic devices such as tablet or notebook computers have been widely used, wherein tablet computers are light, compact and easy to operate, which make them the fast growing portable electronic devices. However, since a tablet computer is lightweight and uses a touch screen as its major input device, such tablet computer is usually not equipped with a keyboard, which may cause inconvenience for users who are used to keyboard input. Although there are a variety of commercially available expandable keyboard docks that can be connected to the tablet computer, they are usually designed to be separated with the tablet computer and combined with an external device when needed and are not easy to carry.
In addition, for the use of tablet computer that can stand in a certain angle on a table plane, the tablet computer is usually designed and provided with a keyboard dock connected with the tablet computer by a fixed inclined angle, or provided with a support stand in the back side of the tablet computer to be rotated out when necessary to support the tablet computer. As to the existing technology, it has now appeared that a tablet computer is simultaneously provided with two expanded devices including a keyboard module and a support bracket. For example, in Taiwan Patent No. TW M256963, the disassembly of a keyboard module in a tablet computer is controlled using a buckling element, and a support bracket is pivotally connected to two sides of the tablet computer directly. To use the keyboard capability, the buckling element needs to be driven to make the keyboard module depart from the tablet computer. To obliquely erect the tablet computer, a holder needs to be manually pulled out to be used as a stand. This design not only makes the keyboard module and the holder operate independently such that the functions cannot be integrated, and the holder is not provided with an appropriate securing structure and easy to be accidentally pulled to open, which needs to be improved.


An apparatus for storing data in a magnetic random access memory (MRAM) is provided. The MRAM may store data in one or more resistance-based memory cells and may include a plurality of comparators to compare a voltage generated based on the resistance-based memory cells to a reference voltage to determine a stored logic state. In some implementations, the reference voltage may be generated by a plurality resistance-based memory cells. The reference voltage may be adjusted higher or lower by storing different logic states within the resistance-based memory cells.

This Summary is provided to introduce in a simplified form a selection of concepts that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.
A magnetic random access memory (MRAM) array is disclosed. The MRAM array may include a plurality of memory data bit line groups configured to store data, a plurality of reference bit lines configured to provide a reference voltage, wherein the reference voltage is based on voltages provided by at least one resistive bit cell of each reference bit line, and a plurality of sense amps configured to compare a data bit line voltage from the plurality of memory data bit line groups to the reference voltage.
In another example, a voltage generator to provide a reference voltage is disclosed. The reference voltage generator may include a plurality of resistive bit cells configured to store a first logic state and a second logic state, wherein a reference voltage is provided based on a first number of resistive bit cells storing the first logic state and a second number of resistive bit cells storing the second logic state.
In another example, a magnetic random access memory (MRAM) array may include a means for storing data via a plurality of memory data bit line groups, a means for providing a reference voltage based on voltages provided by at least one resistive bit cell, and a means for comparing a data bit line voltage from the plurality of memory data bit line groups to the reference voltage.

Reference voltage generator for resistive memory array


A bus bar is installed on a relay box accommodating relays. An exposed core wire at one end of an input line and an exposed core wire at one end of a bypassing line are crimped to a crimping portion of a first connection terminal. An exposed core wire at one end of an output line and an exposed core wire at the other end of the bypassing line are crimped to a crimping portion of a second connection terminal. The first and second connection terminals are connected with the bus bar by means of a respective screws tightened into the bus bar.

1. Field of Invention
The present invention relates to an electric wiring construction having a bus bar that supplies electricity to one or more electrical components. A first connection terminal is connected with the bus bar by means of a first screw tightened into the bus bar. A second connection terminal is connected with the bus bar by means of a second screw tightened into the bus bar. An input line is connected with the first connection terminal, and an output line that supplies electric current to one or more other electricity-consuming components is connected with the second connection terminal.
2. Description of Related Art
Conventionally, the various electricity-consuming components installed on a vehicle (e.g. a glow plug, heater, or the like) are powered by electricity generated by a generator which is operated by the actuation of the engine. A relay box is provided on an electricity supply path connected with the electricity-consuming components. The relay box accommodates a plurality of relays that switches the supply of electric current to electricity-consuming components, to turn them on and off. FIG. 6 shows a conventional relay box 11. An electrically conductive bus bar 12 is installed on the relay box 11. Relays are electrically connected with the bus bar 12. A part of the bus bar 12 is exposed on an outer surface of the relay box 11. Electricity generated by a generator is transmitted to the relays through an input line 13 and the bus bar 12. The input line 13 is crimped to connect it with a first crimping portion 151 of a first connection terminal 15. The first connection terminal 15 is connected with the bus bar 12 by a first screw 16 tightened into the bus bar 12.
The bus bar 12 that supplies electricity to the relays is also used to supply electricity to other electricity-consuming components other than via the relays. An output line 14 that supplies electricity to the other electricity-consuming components is crimped to connect it with a second crimping portion 171 of a second connection terminal 17. The second connection terminal 17 is connected with the bus bar 12 by a second screw 18 tightened into the bus bar 12.
The electricity generated by the generator is transmitted to the relays accommodated inside the relay box 11 and the output line 14 through the input line 13 and the bus bar 12. That is, through the bus bar 12, electricity is sent to the other electricity-consuming components positioned at the other end of the output line 14. When electricity passes through the bus bar 12, heat is generated by the bus bar 12. The generated heat is transmitted to the first and second connection terminals 15 and 17 and the first and second screws 16 and 18. Owing to the heat transmission, the first and second connection terminals 15 and 17 and the first and second screws 16 and 18 are heated. As described above, the input line 13 is fixed by crimping to the first connection terminal 15, and the output line 14 is fixed by crimping to the second connection terminal 17. When the temperature of the generated heat of the bus bar 12 exceeds the thermal resistance temperature of the first connection terminal 15 and that of the second connection terminal 17, the electrical contact between the input line 13 and the first crimping portion 151 and that between the output line 14 and the second crimping portion 171 become poor.

Electrical wiring construction including a bus bar


A key switch device including a key top; a pair of link members connected to the key top and interlocked with each other to guide a vertical motion of the key top; a switch mechanism including a membrane sheet switch capable of opening and closing a contact section of an electrical circuit in accordance with the vertical motion of the key top; a flexible thin film sheet attached to the membrane sheet switch; and a housing attached to the thin film sheet, the housing adapted to connect the link members to the thin film sheet.

1. Field of the Invention
The present invention relates to a key-entry type switch device (hereinafter referred to as a key switch device) subjected to a key-entry operation, and more particularly to a key switch device which may preferably be used for a keyboard incorporated as an input device in electronic equipment. The present invention also relates to a keyboard provided with a plurality of key switch devices.
2. Description of the Related Art
A thin or low-profile type keyboard has been incorporated in, for example, a notebook type personal computer or other electronic apparatuses. The keyboard is provided with a plurality of key switch devices for a key-entry operation. For example, a gear link-type key switch device is provided with a support plate, a key top arranged above the support plate, a pair of link members connected to the key top and interlocked with each other to guide a vertical or upward-and-downward motion of the key top above the support plate, and a membrane sheet switch capable opening and closing a contact section of an electrical circuit in accordance with the vertical motion of the key top. The link members are secured to the support plate by, for example, a frame-shaped housing. The support plate is attached at the front surface thereof to the back surface of the membrane sheet switch.
For example, Japanese Unexamined Patent Publication (Kokai) No. 2009-76321 (JP2009-76321A), Japanese Unexamined Utility Model Publication (Kokai) No. 5-66832 (JP5-66832U), and Japanese Unexamined Patent Publication (Kokai) No. 9-27235 (JP9-27235A) describe conventional key switch devices.
In the conventional key switch device, the support plate is formed from a metal material, such as a sheet metal or a stainless steel. Therefore, the support plate must have rigidity sufficient to prevent permanent deformation or breakage even when, for example, the support plate is subjected to a stress during the manufacturing or transporting process of a keyboard. Otherwise, a keyboard having a permanently deformed or broken support plate cannot be used as a finished product. Therefore, the support plate is required to have a certain extent of thickness for ensuring the rigidity. However, the thickness may impede reduction in weight and height of a key switch device.


A semantic vector generation device (100) obtains vectors of a plurality of words included in text data. The semantic vector generation device (100) extracts a word included in any group. The semantic vector generation device (100) generates a vector in accordance with the any group on the basis of a vector of the word extracted among the obtained vectors of the words. The semantic vector generation device (100) identifies a vector of a word included in an explanation of any semantics of the word extracted among the obtained vectors of the words. The semantic vector generation device (100) generates a vector in accordance with the any semantics on the basis of the vector identified and the vector generated.

In recent years, there have been conventional techniques of computing a vector of a word included in a sentence on the basis of Word2Vec (Skip-gram). A case where a vector of a word "mean" is computed is described below as an example. In the conventional techniques, on the basis of a Sentence 1, a Sentence 2, and other sentences (not illustrated), a feature amount of a hidden layer is computed in such a manner as to optimize the probability of a co-occurring word that occurs with the word "mean", and the computed feature amount is set as a vector of the word "mean".
"What does this phrase mean?" . . . (Sentence 1)
"I mean it as a joke." . . . (Sentence 2)
However, the conventional techniques described above have a problem with a multisense word with plural semantics in that a semantic vector corresponding to each of the semantics has low relevance to the semantics.
For example, in the conventional techniques, vector computation simply takes into account the co-occurrence relation between words, and does not distinguish plural semantics of a target multisense word in a text from each other. Thus, only a single vector is assigned to the target multisense word. For example, the word "mean" included in the Sentence 1 is a multisense word. When the semantics of this word is determined on the basis of the Sentence 1 in its entirety, the semantics of the word "mean" included in the Sentence 1 is "sense". In contrast, when the semantics of the word "mean" included in the Sentence 2 is determined on the basis of the Sentence 2 in its entirety, the semantics of the word "mean" included in the Sentence 2 is "say".
Therefore, the semantics of the word "mean" included in the Sentence 1 is different from the semantics of the word "mean" included in the Sentence 2. It can thus be said that when a vector is assigned to the word "mean" simply on the basis of the co-occurrence relation, only a vector with low relevance to the semantics of the word is computed.

Non-transitory computer readable recording medium, semantic vector generation method, and semantic vector generation device


A plurality of fluid-fluid contact trays of the cross-flow type are provided within a shell of a mass transfer or heat exchange column. The trays include tray decks that are supported on rings fixed to an inner surface of the shell and downcomers that are supported, not by the typical bolting bars fixed to the shell, but by the tray deck of the underlying tray. The mechanisms for supporting the downcomers in this fashion are support brackets that are not secured to the column shell, but instead extend downwardly from the downcomers and rest on the tray deck of the underlying tray. Alternating trays have side downcomers positioned at openings at one or both ends of the tray deck. The support rings on those trays having side downcomers may be truncated so that the rings do not extend around that portion of the shell circumference where the side downcomer openings are located. On the remaining trays, complete 360 degree rings may be used. Some or all of the downcomers have an inwardly extending shoulder segment in one or both side walls that supports portions of the tray deck and contains fluid passages.

The present invention is directed to mass transfer devices and, more particularly, to vapor-liquid contact trays and methods of making and utilizing such trays.
Various types of trays are commonly used in mass transfer columns to promote contact and mass transfer between ascending and downwardly flowing fluid streams. The ascending fluid is typically vapor and the descending fluid is typically liquid, although liquid-liquid and gas-liquid systems are also known. Each tray normally extends horizontally across substantially the entire horizontal cross section of the column and is supported around its perimeter by a ring welded to the inner surface of the circular column wall or shell. A number of trays are positioned in this manner with a uniform vertical spacing between adjacent trays. The trays may be located in only a portion of the column to perform one part of a multi-step process occurring with the column. Alternatively, the trays may fill substantially the entire open area within the column.
Trays of the type described above contain one or more downcomers that are positioned at openings in the tray deck to provide passageways for liquid to descend from one tray to an adjacent lower tray. Prior to entering the downcomer, the liquid on the tray deck interacts with ascending vapor that passes through openings provided in selected portions of the tray deck. Those areas of the tray deck containing vapor openings are commonly referred to as xe2x80x9cactivexe2x80x9d areas because of the vapor and liquid mixing and frothing that occurs above those areas of the tray. The downcomer inlets on vertically adjacent trays may extend in laterally opposite directions to promote more uniform lateral distribution of the descending liquid or they may extend in a parallel but offset relationship.
At least two broad categories of trays are used in mass transfer columns. The first category of trays is referred to as counter-flow trays or multiple downcomer trays and is characterized by a relatively large number of downcomers positioned on each tray. In counter-flow trays, the downcomers are generally trough-shaped and extend above the tray so that liquid must accumulate on the tray surface before entering the inlet to the downcomer. The lower outlet of such downcomers utilizes a perforated plate that causes liquid to accumulate within the downcomer to seal the outlet against the entry of ascending vapor into the downcomer where it would impede the descending flow of liquid. The lower outlet of this type of downcomer is normally located well above the deck of the tray below and above the inlet of the downcomers on the tray below.
The second broad category of trays is referred to as cross-flow trays and differs from counter-flow trays in several significant respects. First, the number of downcomers utilized in cross-flow trays is normally less than the number used in counterflow trays. Cross-flow trays normally use a side downcomer located at opposite ends of adjacent trays, although in multiple pass configurations one or more additional downcomers are located at intermediate locations on each cross-flow tray. Downcomers on cross-flow trays normally discharge liquid onto an imperforate receiving pan located on the tray below and inlet weirs are provided adjacent the receiving pan to cause liquid to accumulate above the level of the downcomer outlet to seal against entry of vapor into the downcomer. By contrast, as discussed above, counter-flow tray downcomers use a perforated discharge plate rather than an inlet weir to form the liquid seal and liquid is discharged onto the active area of the underlying tray rather than onto an imperforate seal pan.
Counter-flow and cross-flow trays also differ in the manner in which they are constructed and installed in a column. Counter-flow trays are normally supported entirely on the support rings that are welded to the inner surface of the column shell. Because the downcomer outlets in counter-flow trays are located well above the tray below, some variations in tray spacing resulting from deviations in ring placement and downcomer construction can be accommodated without significantly affecting tray performance. As a result, each downcomer and tray panel in a counter-flow tray is normally preassembled and then simply carried into the column through a manway or other opening and positioned on the support ring.
By contrast, the downcomers in cross-flow trays extend almost completely to the tray below and must be carefully positioned to ensure that the proper vertical clearance is provided between the lower edge of the downcomer and the imperforate seal pan on the tray below. Variations in this vertical clearance can significantly affect the amount of liquid that can be discharged from the downcomer and may result in detrimental flooding of the downcomer and column. Because the vertical clearance is so important, the downcomer is normally assembled within the column using multiple pieces so that the lower wall or apron of the downcomer can be adjusted to provide the proper vertical clearance.
The downcomers in counter-flow and cross-flow trays also differ in the manner in which they are supported in the column. Counter-flow downcomers are box-like in configuration and normally do not extend completely across the column cross section in order to simplify installation of the trays. Because fewer downcomers are normally used in cross-flow trays, they traditionally extend completely across the horizontal cross section of the column to maximize the total liquid carrying capacity of the downcomers. Normally the column shell forms the short end walls of these downcomers and, in the case of side downcomers, one of the longitudinally extending downcomer side walls. The remaining side walls of each downcomer are attached to the column shell using numerous vertically extending and inclined bolting bars that are prepositioned and welded to the inner surface of the column shell. Location and installation of these bolting bars is a time-consuming and labor-intensive task that can add significantly to the installation cost of cross-flow trays. Moreover, if the bolting bars are misaligned, installation of the downcomer is made more difficult and/or the important vertical discharge clearance at the downcomer outlet may be adversely affected.
A need has thus developed for a cross-flow tray that is easier to install and does not require the use of downcomer bolting bars.
In one aspect, the present invention is directed to a mass transfer or heat exchange column having an upright shell that defines an open internal region and has an inner surface with a circumference of preselected length. A first tray support in the nature of a partial or complete support ring is attached to the inner surface of the shell and extends in a first plane around at least a portion of the circumference of the inner surface of the shell. A second tray support also in the nature of a support ring or segments thereof is attached to the inner surface of the shell and extends in a second plane spaced a preselected distance below the first plane around at least a portion of the circumference of the inner surface of the shell. A first tray and an underlying second tray are positioned within the shell and each tray is of similar construction and comprises a tray deck having an active area and opposed ends and opposed sides. At least one and normally a plurality of downcomers are each positioned at an opening in the tray deck and extend in a downward direction for removing liquid following interaction with vapor on the tray deck. The tray deck of the first tray is supported by said first tray support and the tray deck of the second tray is supported by the second tray support. At least one support bracket extends downwardly from one or more of the downcomers of the first tray to the underlying second tray and supports the associated downcomers of the first tray on the underlying second tray. In this manner, the support brackets allow the desired downcomer clearance to be maintained even though there may be variances in the placement of the support rings. Moreover, the elimination of bolting bars that are conventionally welded to the column shell allows for quicker and less costly assembly of the trays 16 within the column 10.
In another aspect, the invention is directed to a method of installing a plurality of the contact trays within a new or revamped mass transfer or heat exchange column. The method includes the steps of providing a first tray support attached to the inner surface of the shell and extending in a first plane around some or substantially the entire circumference of the inner surface of the shell. A second tray support is attached to the inner surface of the shell and extends in a second plane spaced a preselected distance below the first plane around some or substantially the entire circumference of the inner surface of the shell. A first tray and an underlying second tray of the type described herein are carried into the column through suitable manways or other openings and are assembled with the tray deck of the first tray supported on the first tray support and the tray deck of the second tray supported on the second tray support. The downcomers of at least the first tray and preferably both the first and second trays are supported entirely on the tray deck of the underlying trays.
The present invention is also directed to a contact tray comprising a tray deck having vapor apertures for permitting vapor to ascend through the tray for mixing with liquid flowing across the tray deck, an elongated opening in the tray, and a downcomer positioned at the opening for removing liquid from the tray deck. The downcomer comprises spaced apart side walls and end walls that extend between the side walls to close opposite ends of the downcomer. Each of the side walls comprises a lower segment, an upright intermediate segment and an inwardly extending shoulder segment. At least one of the lower segments is inclined toward the other lower segment to from a lower discharge outlet having a preselected open area in a horizontal plane which is less than a horizontal cross-sectional area between the intermediate segments of the downcomer. Portions of the tray deck overlap and are supported on the shoulder segments. Aligned fluid passage openings in the shoulder segments and the overlapped portions of the tray deck allow liquid entry into the downcomer during start up. Following start up, the fluid passage openings also permit vapor that has separated from liquid in the downcomer to exit the downcomer without impeding liquid entry into the downcomer inlet. Advantageously, each downcomer side wall and an associated weir are of a one-piece construction formed by folding a single sheet of metal.

Contact tray having tray supported downcomers


A brush for styling hair has a handle connected to a head with the head having a longitudinal axis and a number of stationary teeth and a number of movable teeth. The stationary teeth and the movable teeth both are arranged in a number of rows. The stationary teeth and the movable teeth are aligned with one another in a first position. The movable teeth traverse an amount in a direction substantially parallel to the longitudinal axis to a second position. The movable teeth in the second position are misaligned relative to the stationary teeth. The stationary teeth and the movable teeth tension hair disposed therethrough.

1. Field of the invention
The present invention aims to provide a device for straightening or flattening the hair, i.e. for styling the hair in order to make it smooth.
More specifically, the present invention aims to provide a device for straightening and styling the hair that is simple to use and cost-effective compared with the appliances currently available on the market.
An additional aim of the present invention is to provide a device which, when used, nevertheless treats the hair and the scalp with great care and which does not have the drawbacks of the prior art.
2. Description of the Related Art
Various devices suitable for smoothing down frizzy or curly hair are known. Generally, these appliances are based on the principle that the hair passes between tongs or rollers. Thus, document DE 2 615 267-A describes electrically-heated tongs in which the hair is placed between heating pads.
Document WO 98/35578 also describes tongs comprising two heating plates.
As an illustration of such device based on the use of rollers pinched together between which the hair is smoothed down, mention may be made of document U.S. Pat. No. 2,910,988-A as well as of document FR 2 571 944-A.
To assist the operation, most of these devices are provided with heating means such as electric resistors heating a pad or alternatively producing hot air or steam.
Large-toothed combs are also known, these are appliances provided with one or several combs making, generally under the effect of an engine, small, continuous and generally longitudinal jerky movements which are meant to untangle the hair when the appliance is passed through it. Appliances of this type are illustrated by documents WO 96/28990; U.S. Pat. No. 4,139,014; U.S. Pat. No. 3,897,794; U.S. Pat. No. 3,840,030; U.S. Pat. No. 3,272,023 and EP 0 687 426-A, but are not suitable for straightening or flattening the hair.
It is generally noticed that most of these existing devices do not entirely satisfy the users' wishes.


A digital memory system includes a memory controller having a driver configured for generating a digital signal. A memory module has a receiver in communication with the driver. The driver is configured for selectively directing the digital signal to the receiver of the memory module. A voltage control module is configured for determining a traffic intensity at which the digital signal is directed to the receiver and dynamically adjusting the reference voltage as a function of the traffic intensity at which the digital signal is directed to the receiver.

1. Field of the Invention
The present invention relates to improving signal quality in a digital signaling system, such as a computer system memory.
2. Background of the Related Art
Digital signaling systems used in computers employ a driver for generating a digital signal and a receiver for receiving the digital signal. For example, a computer memory system may include a processor including a driver to generate an I/O (input/output) signal, and a memory module including a receiver. The signal generated by a digital signaling system is a time-dependent voltage signal used to represent different logic levels, such as a logical "0" and "1." At the receiver, the voltage of the signal may be compared with a reference voltage (Vref) to determine which logic state is being represented at each instance of a clock signal. Some amount of noise is typically present in the channel, which affects the signal voltage. Therefore, it is desirable to maximize the voltage margin between the signal and the reference voltage. A fixed Vref value is typically set during an initial training phase.
As computer technology advances, processor speeds continue to increase, creating a demand for faster memory systems capable of keeping pace with the increasing processor speeds. Faster memory bus speeds are facilitated, in part, by reducing the voltages of I/O data signals, to avoid excessive transition time from one signal level to another (e.g. from a logical "0" to "1"). However, reducing the signal voltage also reduces the voltage margin between the signal voltage and the Vref with which the signal is compared to identify a logical value. If the magnitude of the fixed reference voltage is not suitable, then the available voltage margin may be inadequate and result in reduced signal reliability.

Digital memory system that dynamically adjusts reference voltage as a function of traffic intensity

International Business Machines Corporation


The present invention provides a therapeutic agent for the treatment, prevention and diagnosis of cancers associated with cells that overexpressing podocalyxin-like protein precursor isoform 2 (PODXL-v2) and its variants with deletion of N-terminal serine and proline residues, on the cell surface, including gastric cancers, squamous cell carcinoma of the stomach, gastric adenocarcinoma, small cell carcinoma of the stomach, gastric squamous cell carcinoma, gastric carcinoid tumors, stomach and duodenal cancers, gliobastoma, prostate cancer, urothelial bladder cancer, pancreatic cancer, esophageal cancer, colorectal cancer, ovarian cancer, liver cancer. The agent is based on the amino acid sequences of the novel light chain variable regions of an anti-PODXL-v2 monoclonal antibody (mAb), MAb1738, that can functionally inhibit the proliferation of several human cancer cell lines and the growth and metastasis of gastric cancer in mouse models.

Gastric cancer is the fifth most frequently diagnosed cancer that accounts for about 7% of all cancer cases worldwide (over 1,000,000 new cases in 2018) (Bray et al, 2018). It is particularly prevalent in Asian countries such as China, Japan, and South Korea. Although the mortality of gastric cancer significantly decreased significantly in Japan in recent years due to popularity of gastroscopy and surgical intervention, in other countries without access to earlier diagnosis, the mortality remains very high. Currently, gastric cancer is the third most common cause of cancer-related mortality globally (estimated 783,000 deaths in 2018). Despite of striking improvements in surgery and subsequent radiotherapy and chemotherapy, the prognosis for the patients with advanced stage gastric cancer is still poor, especially for those having lymph node metastasis. Use of targeted therapies for gastric cancer, including small molecules and therapeutic antibodies, is limited due to the lack of a highly specific identified target in gastric cancer cells. Although Trastuzumab, an anti-HER2 receptor mAb, and Ramucirumab, an anti-vascular endothelial growth factor receptor-2 (VEGFR-2) mAb, have been approved by FDA to be combined with chemotherapy for the treatment of locally advanced and metastatic gastric cancer, their efficacy is limited (Bang et al, 2010; Wilke et al, 2014; Fuchs et al, 2014). Some therapeutic antibodies for gastric cancer, such as Zolbetuximab against Claudin-18.2 (Sahin et al, 2018), are currently in clinical investigation. Discovery of new biomarkers for gastric cancer that may lead to the development of improved therapeutic strategies.
Therapeutic antibodies have become a widespread treatment for various cancer types due to their specificity, efficacy, safety and reduced adverse events and side effects. When a tumor-specific antigen is targeted, the antibody administered mainly accumulates at the tumor site, attacking the tumor cells as an antagonist, or by mediating complement-dependent cytotoxicity (CDC), antibody-dependent cellular cytotoxicity (ADCC), or antibody-dependent cell phagocytosis (ADCP). Even if a tumor-specific antibody does not have an anti-tumor activity, it can kill cancer cells by conjugation with cytotoxic agents (antibody drug conjugation, ADC) for systemic administration, with radionuclides for localized radiotherapy, or by application in chimeric antigen receptor-modified T cell (CAR-T) immunotherapy.
In an earlier-filed patent application (Patent Number: CN105504060), a mAb designated MS17-38 was found to specifically bind to gastric cancer cells via a cell-surface glycoprotein, podocalyxin-like protein isoform 2 (PODXL-v2), which is a member of the CD34 family of sialomucins. The gene encoding PODXL is located in the 7q32.3 locus and there are two RNA transcript variants which encode two isoforms of protein precursors, PODXL-v1 and PODXL-v2. PODXL-v1 is widely expressed on podocytes, vascular endothelium, mesothelial cells and platelets, as well as in a number of cancer tissues (Nielsen and McNagny, 2009). PODXL-v2 differs from PODXL-v1 by lacking 32 amino acid residues in the extracellular domain and is specifically expressed or up-regulated in numerous cancer cell types as well as in small blood vessels in tumor tissues. Based on patient survival data, high levels of PODXL transcripts or proteins in tumor cells is associated with poor prognosis in multiple human cancer tissues, such as prostate cancer (Casey et al., 2006), glioblastoma (Binder et al., 2013), colorectal cancer (Larsson et al., 2012), breast cancer (Forse et al., 2013; Snyder et al., 2015), urothelial bladder cancer (Boman et al., 2013, 2017), pancreatic cancer (Taniuchi et al., 2016), and others. Consequently, PODXL was proposed as a potential target for therapeutic antibodies in treatment of cancer types that overexpress PODXL-v2.

Anti-PODXL antibody MAI1738 and its use for cancer treatment


A protective device for at least two projecting parts of a limb, which parts extend outwardly in separate angular planes, the device including a flexible body at least partially surrounding the limb; a protection element made of a rigid or semi-rigid material locally distributed on the flexible body; an attachment system for the protection element on the flexible body; and a tightening element of the flexible body around the limb. The protection element includes at least one first part and one second part connected to one another by an articulation allowing a forced adjustment of the parts of the protection element with respect to the projecting parts to be protected when the tightening element is activated during tightening. The invention finds its application in protective devices used in skating, such as in-line skating, roller skating, or other similar sports.

1. Field of the Invention
The invention is related to a device for protection against falls, and is specifically adapted to sports, like roller skating, in-line roller skating, and skateboarding.
2. Description of Background and Relevant Information
During skating, it is important to have substantial freedom of movement so as to be able more effectively to perform jumps and figures, and furthermore, to execute braking or acceleration related movements. Skating-related risks occur due to the fact that when the skater loses his balance, he may fall down on hard and non shock-absorbent surfaces that can cause serious injuries. Therefore, protective accessories were designed with the object of limiting the risks of injury, especially in the most vulnerable areas, i.e., the head, hands, knees, and elbows.
The drawbacks that are often cited in connection with existing protective accessories are that they provide inadequate protection, either because their designs are usually non-specific, or because they are too cumbersome, thereby limiting the mobility of the limbs, being too hot, and affecting both the smoothness of the motions, and the artistic or aesthetic appearance while skating. In terms of protection, the proposed systems do not give enough importance to the fact that the parts to be protected in any one zone, generally projecting parts, can be numerous and oriented in different planes with respect to one another. Thus, more often than not, the protection is either effective only in one specific plane while remaining ineffective or inadequate in another plane, or else the protection works effectively in all planes, but this is achieved at the price of a device that is much too cumbersome.
Existing systems are also usually complicated and take a long time to put on; this makes them troublesome to use for all occasions, especially when just a short session or one with no apparent difficulties is being planned. However, it is precisely on such occasions that accidents occur most often.
Therefore, there exists a need to improve current systems with the object of (1) making such systems better adapted to the morphology of the body parts to be protected, (2) reducing volume to promote mobility and, (3) facilitating the ease with which such systems can be worn so that their use becomes mandatory.
International Patent Application WO 97/27768 is related to a wrist and hand protective device that consists of a stiffening element extending from the palm of the hand to below the wrist joint. The stiffening element is slipped into the flexible pocket of a band having a planar configuration. The band is positioned by winding it around the wrist, and it is tightened by means of a strap equipped with a Velcro type attachment.
Utility Design DE-UI-297 17 989 is related to a knee protective device consisting of a flexible, appropriately shaped part, on which a stiff plastic shell is fixed. The flexible part is attached to the leg by two straps, each arranged on either side of the knee joint.
U.S. Pat. No. 5,526,531 is a wrist protection consisting of an elongated I-shaped reinforcement connected to the arm via two straps. The reinforcement is extended via a stiff thumb protection finger.
U.S. Pat. No. 5,685,013 is related to a hand, wrist, and forearm protective device. The device, which covers a substantial portion of the forearm via stiffening elements connected by straps, is very cumbersome and limits the mobility of the arm and the hand.
U.S. Pat. No. 5,255,391 is related to a knee protection sleeve consisting of a flexible body, padding means made of a resilient material and detachable affixing means for fixing the sleeve around the knee, having two affixing flaps surrounding the leg from each side of the knee.
Patent Application CA 2,120,176 is related to a knee protective device that promotes the bending of the knee by means of two separate shell portions that are capable of pivoting about a horizontal axis. Still, the only object of the shells is to protect the knee cap and, when tightened, they cannot be adjusted to protect the other distinct projecting parts of the knee.
Other related documents concern other protective devices, such as U.S. Pat. No. 4,190,902 and U.S. Pat. No. 5,611,080.
A wrist protection system is also known that is marketed under the trademark BiomeX-Protection which consists of two preformed stiff parts that are articulated in the area of the wrist so as to promote its mobility. One of these parts has the object of protecting the palm of the hand whereas the other covers the inner portion of the forearm. The stiff parts are simply covered with a fine layer of foam glued onto the base of the preformed parts. It is tightened by means of two longitudinally spaced straps. Therefore, the device cannot be easily conformed or adapted to the size of the hand due to the fact that the structure is very rigid and the position of the articulation does not allow any clearance for its shape or size. Such a device is also cumbersome, and putting it on is a laborious task.

Protective device, specifically adapted to skating


An air supported structure includes a wall portion formed from a plurality of elongated panel members joined together by seams. Webs are interconnected along the seams to relieve stress. A plurality of header cables carry the loads placed on the structure. The header cables extend between corner support assemblies and a funicular cable assembly. The funicular cable assembly extends in an arcuate path around an apex of the structure. More specifically, the funicular cable assembly includes first and second independent strands. The webs passing through the apex of the structure are alternatively connected to these two cable strands. These same webs extend between and are connected to a ground anchoring structure at one end and a crown harness at the other that extends along the apex. The funicular cable assembly advantageously serves to balance the loads placed on the header cables by, for example, changes in wind speed and direction, so as to significantly enhance the stability of the structure.

In recent years, there has existed a growing demand for air supported structures of large size as relatively permanent installations. In order to meet the increased demand for such structures, a need has developed to design the structures with long-term structural integrity and weather resistance.
In order to achieve structural integrity, an air supported structure generally must be designed to withstand two primary types of loading. The first is static and uniform loading that is produced by inflation pressure within the air supported structure. This is typically generated from the input of air from one or more blower systems. The systems are adapted to discharge air into the interior of the air supported structure. The second is generally asymmetric loading produced by air flow over the exterior of the structure. This is often referred to as aerodynamic loading. Depending on the wind speed and direction, aerodynamic loading is quite variable. In fact, under certain storm conditions, aerodynamic loading may change significantly in a very short period of time. Such rapid and drastic changes may affect the stability of the structure.
There are, of course, also various other asymmetric load factors to be considered. Heavy snowfall is one example of this type of load factor. However, in the absence of extreme loading from snow or another such asymmetric load factor, an air supported structure designed to withstand expected wind velocities for its location would normally withstand such other load factors. Accordingly, the ability to withstand aerodynamic loading is the key design feature in air supported structures.
Aerodynamic loading varies as the square of the exterior wind velocity and is proportionately much larger than the normal stresses due to inflation pressure alone. Additionally, it should be appreciated that inflation pressure static loading and variable aerodynamic loading are additive. They also almost invariably act in the same direction.
When any non-uniform loading occurs, equilibrium conditions in the air supported structure may only be achieved either by redistribution of the load or by distortion of the structure. Of course, distortion of the structure is undesirable. Hence, it is critically important for the air supported structure to be designed to provide effective redistribution of load factors. The present invention meets this need by providing improved redistribution and load balancing capabilities.

Air supported structure with funicular cable assembly


Molds for continuous casting machines are made by providing a plurality of different tubular blanks of copper or copper based alloys; selecting a particular blank and feeding same to a first working station in which the blank is provided with a thrust mount such as a rim against which a mandrel to be inserted can abut during subsequent working; a particular mandrel is selected from among a plurality of stored mandrels and forced into the rimmed tubular blank; by means of a die, the tubular blank is forced onto the mandrel in all around, tight, surface to surface contact while preferably a normal orientation of the die is maintained in relation to the mandrel passing through; thereafter the mandrel is recovered from the blank and either returned to the station of mandrel insertion or to the mandrel store.

The present invention relates to the making of molds for continuous casting machines, which molds are to be made of copper or copper alloys; more particularly, the present invention relates to the making of a mold, using a tubular copper or copper alloy blank, which tubular blank is shaped by means of a mandrel, as well as by means of forces acting on the tubular blank from the outside, which mandrel has the final dimensions and/or complementary contour of the internal contour of the mold to be made; the mandrel, of course, is to be removed following the forming and shaping process.
A method of the kind to which the inventions pertains and which is approved upon presently, is basically known through German Pat. No. 1,809,633 (see also U.S. Pat. No. 3,646,799). In accordance with this prior publication, an originally straight tube is forced, for example, onto a mandrel, which is curved, and has also the dimensions of the mold to be made. The tubular blank is just a little larger than the mandrel following forcing the tube onto the mandrel; together they are passed through a die by means of which the tube is now drawn onto the mandrel. Basically, this method is very valuable and many molds at the requisite accuracy and surface quality have been made in this fashion, particularly molds for continuous casting of steel have been made in this manner. The molds, particularly on account of the drawing process, have indeed sufficient hardness.
However, it was found that this mold making procedure when considered just by itself is quite expensive, and the manufacture is rather cumbersome and requires extensive machinery and trained personnel. Moreover, for improving the economy of existing casting machines, one has to an increasing extent larger molds.
Another factor having to do with the economy is that the down time of a machine is to be reduced. This means, molds should have a long use life and not require frequent exchange because during mold changing the machine itself is idle. This, of course, means that the use life of a mold has to be increased, and for this, in turn, it is necessary, to increase inter alia the hardness of the mold material. Also, the true-to-shape conditions are to be improved. On the other hand, it is apparent that an increase in hardness, particularly of a copper based mold material to be continued, with increased accuracy as to shape, means that the shaping forces generally for such a mold will have to be increased.


A conductive layer contact structure is provided, in which a contact hole of a diameter smaller than the resolution of photolithography technique is formed in a stabilized manner by an etching with low aspect ratio, the contact resistance regarding a conductive layer formed through this contact hole is low, and the step coverage of the conductive layer is satisfactory such that it is not electrically short-circuited with other conductive layers. A silicon oxide film and a silicon nitride film are formed on a gate electrode as first insulation layers. A silicon oxide film is formed as a second insulation layer having a high etching selectivity with respect to the silicon nitride film provided as an upper insulation layer of the first insulation layer. Reaching a surface of an n+ diffused layer formed at a surface of a silicon substrate as a conductive region, a contact hole is formed. A sidewall spacer is formed at the inner sidewall of the silicon oxide film defining a hole. Due to this sidewall spacer, the contact hole having a diameter smaller than the resolution of photolithography technique is defined by the inner sidewall of the silicon oxide film and silicon nitride film.

1. Field of the Invention
The present invention relates to a semiconductor device and a method of manufacturing the same, and particularly to a conductive layer contact structure for a conductive region formed at the surface of a semiconductor substrate between the conductive layers formed on the semiconductor substrate and a method of manufacturing the same.
2. Description of the Background Art
Recently, as can be seen from the fact that DRAMs (Dynamic Random Access Memories) and the like are becoming integrated to a higher degree, degree of integration of semiconductor devices is being made higher, and thus dimension of the diameters of the contact holes is becoming more and more reduced as a result of increase in degree of integration of the elements incorporated into the semiconductor devices. In order to form a smaller contact hole, polycrystalline silicon mask opening method and self align contact (SAC) opening method are being considered.
FIG. 26 is a partial cross sectional view of a semiconductor device, showing a contact hole formed by polycrystalline silicon mask opening method at a memory device region of a semiconductor device. Referring to FIG. 26, an isolation oxide film 2 is formed at the surface of a p type polycrystalline silicon substrate 1 by the method of LOCOS (Local Oxidation of Silicon). On the surfaces of p type silicon substrate 1 and isolation oxide film 2, gate oxide films 3 are formed. A gate electrode 4 is formed on this gate oxide film 3. An insulation film 5 is formed on gate electrode 4. On the surface of p type silicon substrate 1 at both sides of gate electrode 4, nxe2x88x92 diffused regions 6 containing an n type impurity of low concentration are formed by the method of LDD (Lightly Doped Drain). At the side surfaces of gate oxide film 3, gate electrode 4 and insulation film 5, sidewall spacers 7 are formed as insulation films. In addition, an n+ diffused layer 8 containing n type impurity of high concentration is formed at the surface of p type silicon substrate 1 so as to join nxe2x88x92 diffused regions 6. Covering gate electrode 4, an interlayer insulation film 11 of silicon oxide film is formed on the surface of p type silicon substrate 1, employing TEOS (Tetraethyl Orthosilicate) as the material. In this interlayer insulation film 11, a contact hole 105 of a small diameter is formed by etching interlayer insulation film 11 to reach a portion of the surface of n+ diffused layer 8.
Description will be made for a method of forming the contact hole shown in FIG. 26, with reference to FIGS. 27A to 27B and 27B to 30B.
FIGS. 27A to 30A are partial cross sectional views illustrating the process of forming the contact hole shown in FIG. 26 at the memory device region in the order of the steps performed. FIGS. 27B to 30B are partial cross sectional views illustrating the process of forming the contact hole shown in FIG. 26 at the peripheral circuit region in the order of the steps performed.
Referring to FIGS. 27A and FIG. 27B, isolating oxide film 2, gate oxide film 3, gate electrode 4, insulation film 5, nxe2x88x92 diffused layer 6, sidewall spacer 7, n+ diffused layer 8 and interlayer insulation film 11 having a thickness of 3000 to 4000 xc3x85 are formed on p type silicon substrate 1. Thereafter, a polycrystalline silicon film 101 having a thickness of 1500 to 3000 xc3x85 is deposited on the entire surface of the interlayer insulation film, and a silicon oxide film 102 employing TEOS as its material (hereinafter referred to as xe2x80x9cTEOS oxide filmxe2x80x9d) is further deposited thereon. On this TEOS oxide film 102, a resist (not shown) is formed, and using the patterned resist as a mask, TEOS oxide film 102 is partially etched. Thus, a hole 103a having a diameter of about 0.3 xcexcm is formed to reach the surface of polycrystalline silicon film 101. Then, on the entire surface of TEOS oxide film 102, a TEOS oxide film is deposited again. By etching back the entire surface of this TEOS oxide film with anisotropical etching, a sidewall spacer 103 of TEOS oxide film is formed at the inner sidewall of hole 103a which had been formed at TEOS oxide film 102.
Thereafter, as shown in FIGS. 28A and 28B, polycrystalline silicon film 101 is etched using TEOS oxide film 102 and sidewall spacer 103 as a mask so as to form a hole 104 having a diameter of 0.08 to 0.12 xcexcm. Then, TEOS oxide film 102 and sidewall spacer 103 are etched away.
Then, referring to FIGS. 29A and 29B, polycrystalline silicon film 101 is used as a mask to etch interlayer insulation layer 11 thereby forming a contact hole 105 with a small diameter. Thereafter, as shown in FIGS. 30A and 30B, polycrystalline silicon film 101 is removed by having its surface entirely subjected to etching. Thus, the contact hole shown in FIG. 26 is formed.
When forming a contact hole with polycrystalline silicon mask opening method as described above, there has been the following problems. First of all, when a contact hole of a small diameter having a high aspect ratio, for example, not lower than 4, is formed at interlayer insulation layer 11, the etching rate would be extremely low, and thus it was very difficult to open a contact hole by an accurate etching. In addition, since it is difficult to bury the material of the conductive layer inside the contact hole after the contact hole is formed, it was difficult to form a conductive layer along the inner sidewall of the contact hole such that a satisfactory step coverage is obtained. Accordingly, there has been problems such as disconnection of conductive layer 106 and increase in contact resistance between conductive layer 106 and n+ diffused layer 8, as shown in FIG. 31.
Moreover, in the case of forming a contact hole with polycrystalline silicon mask opening method, when etching back the entire surface of polycrystalline silicon film 101, there has been a problem that etching is performed at the peripheral circuit region until the surface of gate electrode 4 is exposed, as shown in FIG. 30B. This is because the thickness of interlayer insulation layer 11 covering the surface of gate electrode 4 is thin due to the wide interval between the gate electrodes.
FIG. 32 is a partial cross sectional view showing a semiconductor device having a contact hole formed by self align contact opening method. Referring to FIG. 32, a gate oxide film 3 is formed on the surface of a p type silicon substrate 1. A gate electrode 4 is formed on gate oxide film 3. An insulation film 5 is formed on gate electrode 4. Nxe2x88x92 diffused regions 6 are formed at the surface of p type silicon substrate 1 at both sides of gate electrode 4 by the method of LDD. Sidewall spacer 7 is formed at the side surface of gate oxide film 3, gate electrode 4 and insulation film 5. N+ diffused regions 8 are formed at the surface of p type silicon substrate 1 so as to join nxe2x88x92 diffused layers 6. Silicon oxide film 9 is formed on the surface of p type silicon substrate 1 covering insulation film 5 and sidewall spacer 7. A silicon nitride film 10 is formed on silicon oxide film 9.
Moreover, an interlayer insulation layer 11 of TEOS oxide film is formed on silicon nitride film 10. Contact hole 110 is formed to penetrate silicon oxide film 9, silicon nitride film 10 and interlayer insulation layer 11 to reach a portion of the surface of n+ diffused layer 8. A polycrystalline silicon layer 17 and a tungsten silicide layer 18 are formed as a conductive layer for being in electrical connection with n+ diffused layer 8 via contact hole 110. This conductive layer has two-layered structure including polycrystalline silicon 17 and tungsten silicide 18 to reduce interconnection resistance.
Referring next to FIGS. 33 to 36, description is made for a method of forming the contact hole of FIG. 32. FIGS. 33 to 36 are partial cross sectional views illustrating the process of forming the contact hole of FIG. 32 in the order of the steps performed.
Referring to FIG. 33, gate oxide film 3, gate electrode 4, insulation film 5, sidewall spacer 7, nxe2x88x92 diffused layer 6, n+ diffused layer 8, silicon oxide film 9, silicon nitride film 10 and interlayer insulation film 11 are formed on p type silicon substrate 1. Thereafter, a resist film 107 is formed on interlayer insulation film 11, and a hole 108 is opened at resist film 107.
Then, as shown in FIG. 34, interlayer insulation film 11 is subjected to etching using resist film 107 (FIG. 33) as a mask, thereby forming a hole 109. Resist film 107 is then removed.
Thereafter, as shown in FIG. 35, by etching silicon nitride film 10 and silicon oxide film 9 successively, a contact hole 110 is opened.
Then, as shown in FIG. 36, polycrystalline silicon layer 17 and tungsten silicide layer 18 are formed as conductive layers so as to be electrically connected to n+ diffused layer 8 via contact hole 110. Thus, the contact hole is formed with self align contact opening method, and the conductive layer contact structure is formed.
When the contact hole is formed by self align contact opening method as describe above, the diameter of contact hole 110 would be about 0.30 xcexcm and the distance between the gate electrodes 4 would be 0.32 to 0.36 xcexcm, such that there would be a higher possibility that locations of contact hole 110 and gate electrode below may be overlapped. If the locations of contact hole 110 and gate electrode 4 is overlapped, a contact hole would be formed as shown in FIG. 37, and a conductive layer contact structure as shown in FIG. 38 would be formed. In such a case, when silicon oxide film 9 is over etched due to uniformity of the etching inside the surface upon opening contact hole 110, insulation film 5 and sidewall spacer 7 are subjected to etching, as shown in FIG. 39. As a result, there has been a problem that polycrystalline silicon layer 17 forming the conductive layer and gate electrode 4 is brought into contact and are electrically short-circuited. In addition, since in self align contact opening method a resist patterned by photolithography technique is used as a mask to etch interlayer insulation layer 11 as shown in FIGS. 33 to 35, it was impossible to form a contact hole having a diameter smaller than the resolution of the photolithography technique.
One object of the present invention is to form a contact hole having a diameter smaller than the resolution of the photolithography technique.
In addition, another object of the present invention is to form a contact hole with a desired size in a stabilized manner by etching involving a low aspect ratio.
Furthermore, another object of the present invention is to form a contact hole in which a conductive layer connected to a conductive region of a semiconductor substrate via the contact hole will not be electrically short-circuited to a conductive layer below.
A further object of the present invention is to form a conductive layer contact structure having a low contact resistance.
A still further object of the present invention is to form a conductive layer contact structure in which the step coverage of the conductive layer is satisfactory at the inner sidewall of a contact hole.
In addition, a further object of the present invention is to improve the alignment margin upon forming a contact hole.
A semiconductor device having a conductive layer contact structure according to one aspect of the present invention includes a first conductive layer, a conductive region, a first insulation layer, a second insulation layer, a sidewall insulation layer and a second conductive layer. The first conductive layer is formed on a main surface of a semiconductor substrate. The conductive region is formed at the main surface of the semiconductor substrate between the first conductive layers. The first insulation layer has a first hole reaching the surface of the conductive region, and is formed on the first conductive layer. The second insulation layer has a second hole in communication with the first hole, is formed on the first insulation layer and has a high etching selectivity with respect to the first insulation layer. The sidewall insulation film is formed at the inner sidewall of the second insulation layer defining the second hole. The second conductive layer is formed within the first and second holes such that it is in electrical connection with the conductive region and is electrically insulated from the first conductive layer.
Preferably, the sidewall insulation film has a high etching selectivity with respect to the first insulation layer.
In addition, in accordance with a preferred embodiment of the present invention, the first insulation layer includes upper and lower insulation layers, and the second insulation layer has a high etching selectivity with respect to the upper insulation layer of the first insulation layer. Here, it is preferred that the sidewall insulation film has a high etching selectivity with respect to the upper insulation layer of the first insulation layer. In addition, the first hole is defined by the inner sidewall of the lower insulation layer of the first insulation layer while the second hole is defined by the inner sidewall of the upper insulation layer of the first insulation layer and the inner sidewall of the second insulation layer. The sidewall insulation film is formed at the inner sidewall of the upper insulation layer of the first insulation layer and the inner sidewall of the second insulation layer. The second hole includes a third hole defined by the inner sidewall of the upper insulation layer of the first insulation layer and a fourth hole smaller than the third hole defined by the inner sidewall of the second insulation layer.
The semiconductor device having a conductive layer contact structure according to another aspect of the present invention includes a first conductive layer, a conductive region, a first insulation layer, a second insulation layer and a second conductive layer. The first conductive layer is formed on a main surface of a semiconductor substrate. The conductive region is formed at the main surface of the semiconductor substrate between the first conductive layers. The first insulation layer has a first hole reaching the surface of the conductive region, and is formed on the first conductive layer. The second insulation layer has a second hole larger than the first hole which is in communication with the first hole, is formed on the first insulation layer, and has a high etching selectivity with respect to the first insulation layer. The second conductive layer is formed within the first and second holes so as to be electrically connected to the conductive region and to be electrically insulated from the first conductive layer.
In accordance with the above-described preferred embodiment of the invention, the first insulation layer includes upper and lower insulation layers, and the second insulation layer has a high etching selectivity with respect to the upper insulation layer of the first insulation layer. Here, an additional sidewall insulation film may also be formed at the inner sidewall of the second insulation layer defining the second hole. It is preferred that this sidewall insulation film has a high etching selectivity with respect to the upper insulation layer of the first insulation layer.
In addition, in accordance with another preferred embodiment of the present invention, a sidewall insulation film is additionally formed at the inner sidewall of the second insulation layer defining the second hole, and this sidewall insulation film has a high etching selectivity with respect to the first insulation layer.
In addition, the conductive layer contact structure according to the present invention is also applicable to the case in which the second hole exists at a location overlapping a portion of the first conductive layer.
A method of manufacturing a semiconductor device having a conductive layer contact structure according to another aspect of the present invention includes the following steps:
(a) forming a first conductive layer on a main surface of a semiconductor substrate;
(b) forming a conductive region at the main surface of the semiconductor substrate between the first conductive layers;
(c) forming a first insulation layer on the main surface of the semiconductor substrate and on the first conductive layer;
(d) forming the second insulation layer having a high etching selectivity with respect to the first insulation layer on the first insulation layer;
(e) forming a first hole reaching the surface of the first insulation layer in the second insulation layer by selectively removing the second insulation layer;
(f) forming a third insulation layer on the second insulation layer and within the first hole;
(g) forming a sidewall insulation film at the inner sidewall of the second insulation layer defining the first hole by selectively removing the third insulation layer;
(h) forming a second hole reaching the surface the conductive region in the first insulation layer by selectively removing the first insulation layer using the sidewall insulation film as a mask; and
(i) forming a second conductive layer within the first and second holes such that it is electrically connected to the conductive,region and is electrically insulated from the first conductive layer.
According to a preferred embodiment of a manufacturing method of the above-described semiconductor device, the step of forming the first insulation layer includes forming a first insulation layer including upper and lower insulation layers on the main surface of the semiconductor substrate and on the first insulation layer. The step of forming the second insulation layer includes forming on the first insulation layer a second insulation layer having a high etching selectivity with respect to the upper insulation layer of the first insulation layer. Furthermore, the step of forming the second hole in the first insulation layer includes forming a hole in the upper insulation layer of the first insulation layer to reach the surface of the lower insulation layer of the first insulation layer by selectively removing the upper insulation layer of the first insulation layer using the sidewall insulation film as a mask, and forming a hole in the lower insulation layer of the first insulation layer to reach the surface of the conductive region by selectively removing the lower insulation layer of the first insulation layer using the upper insulation layer of the first insulation layer as a mask.
In addition, according to the above-described preferred embodiment of the manufacturing method of the semiconductor device in accordance with the invention, the step of forming the first insulation layer includes forming a first insulation layer including upper and lower insulation layers on the main surface of the semiconductor substrate and on the first conductive layer. Moreover, the step of forming the second insulation layer includes forming a second insulation layer having a high etching selectivity with respect to the upper insulation layer of the first insulation layer on the first insulation layer. Furthermore, the manufacturing method of the semiconductor device according to this preferred embodiment includes the step of forming a third hole in the upper insulation layer of the first insulation layer to reach the surface of the lower insulation layer of the first insulation layer by selectively removing the upper insulation layer of the first insulation layer after forming the first hole in the second insulation layer. The step of forming the third insulation layer includes forming a third insulation layer on the second insulation layer and within the first and third holes. The step of forming the sidewall insulation film includes forming a sidewall insulation film at the inner sidewall of the second insulation layer defining the first hole and the inner sidewall of the upper insulation layer of the first insulation layer defining the third hole by selectively removing the third insulation layer. The step of forming the second hole in the first insulation layer includes forming the second hole reaching the surface of the conductive region in the lower insulation layer of the first insulation layer by selectively removing the lower insulation layer of the first insulation layer using the sidewall insulation film as a mask. The step of forming the second conductive layer includes forming a second conductive layer inside the first, second and third holes.
The manufacturing method of the semiconductor device according to the above-described invention is also applicable to the case in which the first hole exists at a location overlapping a portion of the first conductive layer.
A method of manufacturing a semiconductor device having a conductive contact structure according to another aspect of the present invention includes the following steps:
(i) forming a first conductive layer on a main surface of a semiconductor substrate;
(ii) forming a conductive region at the main surface of the semiconductor substrate between the first conductive layers;
(iii) forming a first insulation layer including upper and lower insulation layers on the main surface of the semiconductor substrate and on the first conductive layer;
(iv) forming a second insulation layer having a high etching selectivity with respect to the upper insulation layer of the first insulation layer on the first insulation layer;
(v) forming a first hole reaching the surface of the first insulation layer in the second insulation layer by selectively removing the second insulation layer;
(vi) forming a third insulation layer having a high etching selectivity with respect to the upper insulation layer of the first insulation layer and having an etching rate different from that of the second insulation layer on the second insulation layer and within the first hole;
(vii) forming a sidewall insulation film at the inner sidewall of the second insulation layer defining the first hole by selectively removing the third insulation layer;
(viii) forming a second hole reaching the surface of the lower insulation layer of the first insulation layer by selectively removing the upper insulation layer of the first insulation layer using the sidewall insulation film as a mask;
(ix) removing the sidewall insulation film;
(x) forming a third hole in the lower insulation layer of the first insulation layer to reach the surface of the conductive region by selectively removing the lower insulation layer of the first insulation layer using the upper insulation layer of the first insulation layer as a mask; and
(xi) forming a second conductive layer within the first, second and third holes such that it is electrically connected to the conductive region and is electrically insulated from the first conductive layer.
Since a method of forming a contact hole based on self align contact opening method is adopted in the conductive layer contact structure of the present invention formed in this way, a conductive layer contact structure having a low contact resistance can be obtained by an etching with low aspect ratio without the interconnection layer as the second conductive layer being in contact with the gate electrode as the first conductive layer at the peripheral circuit region. In addition, since a sidewall insulation film is formed at the inner sidewall defining the hole of the second insulation layer, a contact hole smaller than the resolution of photolithography technique can be formed to have a desired size in a stabilized manner without the interconnection layer as the second conductive layer being in contact or without being electrically short-circuited with the gate electrode as the first conductive layer at the memory device region also. Furthermore, it is possible to form a second conductive layer with a satisfactory step coverage within the contact hole along the inner sidewall of the contact hole.
Moreover, in a semiconductor device having a conductive layer contact structure according to another aspect of the present invention, the sidewall insulation film is removed in the end within the contact hole, and thus it is possible to obtain a structure having a lower contact hole as compared to the case in which conductive layer contact structure is formed with the sidewall insulation film remaining in the end.
In addition, according to a preferred embodiment of the conductive layer contact structure of the present invention, a sidewall insulation film is formed along the inner sidewall defining the hole of the second insulation layer and the inner sidewall defining the hole of the upper insulation layer of the first insulation layer, and thus the contact hole is tapered forward, in other words, would have its diameter of the opening increased smoothly as it extends upwards from the main surface of the semiconductor substrate. As a result, the step coverage of the second conductive layer formed at the inner sidewall of the contact hole would be satisfactory.
Also, even if the interval between the gate electrodes is wide and the location of the second insulation hole does not overlap the location of the gate electrode below, alignment margin upon formation of the contact hole would be improved as compared to the conventional self align contact opening method.
Thus, according to the present invention, a contact hole with a diameter smaller than the resolution of photolithography technique can be formed by an etching with a low aspect ratio. Even when the upper second conductive layer is formed to be in contact with the conductive region of the semiconductor substrate through that contact hole, it is possible to provide a semiconductor device having a conductive layer contact structure in which the second insulation layer is not electrically short-circuited. Accordingly, a conductive layer contact structure appropriate for a highly integrated semiconductor device such as a bit line contact structure of a DRAM and a storage node contact structure of a capacitor can be provided.

Semiconductor device with conductive contact layer structure