A fluid-filled cylindrical elastic mount having an elastic body between an inner and an outer sleeve, a movable member movably disposed in a pressure-receiving chamber defined by the outer sleeve and the elastic body, a rigid member cooperating with the outer sleeve to define a space diametrically opposite to the pressure-receiving chamber in a load-receiving direction of the mount, and a partition member having a flexible portion and dividing the space into two sections one of which serves as an equilibrium chamber disposed diametrically opposite to the pressure-receiving chamber. The movable member and the inner surface of the pressure-receiving portion define a fluid resonance portion for isolating high-frequency vibrations. An orifice passage is spirally formed for fluid communication between the pressure-receiving and equilibrium chambers, for damping low-frequency vibrations.

1. Field of the Invention
The present invention relates in general to a fluid-filled cylindrical elastic mount capable of reducing the amount of transmission of vibrations, based on flows of a fluid contained therein. More particularly, the invention is concerned with a simplified structure of a fluid-filled cylindrical elastic mount capable of effectively damping input vibrations having relatively low frequencies, and exhibiting a sufficiently low dynamic spring constant with respect to input vibrations having high frequencies.
2. Discussion of the Prior Art
A cylindrical elastic mount such as a suspension bushing or engine mount used on a motor vehicle is known as a device for elastically or flexibly connecting two members in a vibration system in a vibration damping or isolating manner, or as a device for mounting one of the two members on the other member such that the one member is elastically or flexibly supported by the other member. Such a cylindrical elastic mount has an inner and an outer sleeve which are made of a metallic material and are disposed in radially spaced-apart, coaxial or non-coaxial relationship with each other. Between these inner and outer sleeves, there is interposed an elastic body such as a formed rubber mass, such that the two sleeves are elastically connected by the elastic body.
The elastic mount of the type indicated above is generally required to provide an excellent vibration damping effect with respect to low-frequency vibrations, and exhibit a sufficiently low dynamic spring rate or constant with respect to high-frequency vibrations. Conventionally, the elasticity or elastic deformation or displacement of the elastic body is primarily relied upon to meet these two requirements concerning the vibration damping and/or isolating characteristics. However, the conventional elastic mount suffers from considerable difficulty in meeting the requirements, particularly the requirement for providing a satisfactory effect of damping the low-frequency vibrations.
In view of the above drawback of the conventional cylindrical elastic mount, a so-called fluid-filled mount has been recently proposed, as disclosed in Publication Nos. 48-36151 and 52-16554 of examined Japanese Patent Applications. A fluid-filled elastic mount as disclosed in these publications has two fluid chambers which are partially defined by an elastic body and are spaced apart from each other in a radial direction of the mount in which vibrations are received. The two fluid chambers are held in fluid communication with each other through a suitable orifice passage, so that the input vibrations having relatively low frequencies may be effectively damped by resonance of a fluid flowing through the orifice passage. The fluid flow is induced due to elastic deformation of the elastic body upon application of the vibrations to the fluid-filled elastic mount.
In the fluid-filled elastic mount indicated above, the orifice passage for causing the fluid resonance is tuned so as to provide excellent damping characteristic for the vibrations having relatively low frequencies. However, the elastic mount also receives vibrations whose frequencies are higher than those of the excellently damped vibrations. When the frequency range of the vibrations received by the elastic mount is higher than the tuned frequency range of the orifice passage, substantially no flows of the fluid through the orifice passage occurs, or the orifice acts as if it were closed. In this case, therefore, the fluid-filled elastic mount exhibits a considerably high dynamic spring constant, and tends to undesirably suffer from deteriorated characteristics for isolating the high-frequency vibrations.
To overcome the above problem, it is proposed to suitably lower the dynamic spring constant of the fluid-filled elastic mount, by employing a mechanism which includes an oscillating plate for absorbing the pressure of the fluid when the vibrations having relatively high frequencies are applied to the elastic mount. Examples of fluid-filled vibration isolating devices incorporating such a mechanism are shown in laid-open Publication Nos. 53-5376 and 57-9340 of unexamined Japanese Patent Applications. However, the use of the fluid pressure absorbing mechanism indicated above for the fluid-filled cylindrical elastic mount necessarily complicates the structure of the mount, and results in an increase in the cost of manufacture of the mount, thereby making it difficult to adopt the mechanism from the economical point of view.

Fluid-filled cylindrical elastic mount having moveable block and spiral orifice


Disclosed is an image reading apparatus which reads a document placed on a reading unit including a display input unit including a first display unit which displays information and an input unit to accept an input operation with respect to the first display unit; a document holder which sandwiches the document with the reading unit, a support which supports the document holder so as to rotate so that a facing state of the document holder with respect to the reading unit is switchable and a second display unit which includes a surface of the document holder which faces the reading unit and the second display unit carries out a display in the surface.

1. Field of the Invention
The present invention relates to an image reading apparatus.
2. Description of Related Art
As for a method to carry out various types of inputs to an image reading apparatus such as an image scanner and MFP (Multifunction Peripheral), there is a method to carry out inputs from a touch panel by providing the image reading apparatus with a touch panel as shown in JP 2003-274102, for example. The touch panel is a device that includes a display unit which displays information and an input unit which accepts input operations with respect to the display unit, and the inputs can be carried out in a feeling like directly carrying out the operations to the display content of the display unit.
In recent years, functions included in an image reading apparatus have increased greatly. As for the functions included in the multi function image reading apparatus, for example, a function to output image data which is read by the image reading apparatus without involving an external device, a function to set various types of conditions such as the number of colors, resolution level and output format of image data, a function to directly connect the image reading apparatus to a computer network such as a local area network (LAN) and the like are suggested and other various types of functions are also suggested.
As the number of functions included in the image reading apparatus increases, the number of items to be inputted to the image reading apparatus also increases. On the other hand, in a case where inputs are to be carried out with respect to the image reading apparatus by the touch panel of JP 2003-274102, there is a limit in the amount of information that can be displayed in the display unit in a size that does not interfere with confirming (visually confirming) of the display content. Therefore, the amount of information and the items which can be inputted in one display content are restricted by the size of the touch panel. Therefore, when there are many setting items, the input operations need to be carried out by switching the content of the display unit many times in order to complete the inputs with respect to the image reading apparatus by the conventional touch panel. Thus, a user bound to carry out complicating operations.
By making the touch panel in larger size, the amount of information in one display content can be increased. However, when the touch panel is simply made in a larger size, the space for setting the touch panel needs to be increased, and thereby causing the image reading apparatus as a whole to be larger for making the size of the touch panel larger.

Image reading apparatus for reading a document on a reading unit

Konica Minolta Business Technologies, Inc.


A system for analyzing the pore size of a substrate or device containing substrates adapted to separate fluids and has at least two surfaces, a first and a second surface, which are isolated from, one another and wherein the substrate or devices containing the substrates have an exit for fluids passing through the substrate, comprising: a) a particle generator (15) capable of generating particles of a controlled size; b) a system (18) for creating a pressure differential between the first and the second surface of the substrate; c) a light source (24) spaced front the exit of the substrate or device containing the substrate adapted for illuminating particles exiting the exit of the substrate or device containing the substrate; d) a closed flow path from the particle generator to the first surface of the substrate; e) a substrate or device holder (11) adapted for holding the substrate or device in the proper location in the system; and f) one or more reference images. Also described are methods of utilizing the system to identify pore sizes of substrates.

Substrates that are designed to isolate particulate matter from fluids, gasses, light, and solids are well known in the art. A class of such substrates is membrane systems. Typically these membrane systems utilize a barrier that is capable of separating mixtures of fluids or separating solids or particulates from a fluid. One example includes a reverse osmosis membrane designed to remove salt from brackish or salt water. Another example includes an ultrafiltration membrane which can remove higher molecular weight organic compounds from a liquid. Another class of substrates is wall flow filters. Wall flow filters are typically ceramic based and separate particulates from fluids based on size. A common design of a wall flow filter comprises a shaped ceramic article with flow passages that extend through the article in one direction. Wall flow filters have in one direction a series of walls that define flow passages generally arranged such that the walls and flow passages are disposed parallel to one another and the walls and passages extend through the shaped ceramic article. In the direction perpendicular to the walls and flow passages the wall flow filters generally demonstrate a consistent cross-sectional shape. The cross sectional shape can be any shape which is suitable for the intended use of the wall flow filter. The cross sectional shape can be circular, oval, square, rectangular, polyhedral or a shape defined by an assembly of square, rectangular or polyhedral shaped parts. In some embodiments, the wall flow filters exhibit two faces at each end having the desired cross-sectional shape and the flow passages are perpendicular to the faces of the filter and extend from one end or face to the other end or face. Often this arrangement is referred to as a honeycomb design because each end of the filter looks similar to a honeycomb. The wall flow filter may have a square or rectangular cross sectional shape. In another preferred embodiment, the wall flow filters comprise a plurality of individually formed parts that are assembled together to form a desired cross section in the direction perpendicular to the direction of the flow passages. In this last instance the cross section of the wall flow filter comprises an assembly of the cross section of the parts used to prepare the wall flow filter and can be engineered to have any desired shape. Wall flow filters often are arranged having a plurality of walls defining a plurality of flow passages. In wall flow fillers at one end every other flow passage is plugged such that the fluids cannot pass through the end of the plugged flow passage. At the other end the neighboring passages are plugged in a similar manner. The arrangement results in a structure such that each flow passage is open at one end and plugged at the opposite end. Each flow passage is surrounded by passages that are plugged at the opposite end from which it is plugged. In order to separate particulates from a fluid stream, the fluid stream is introduced through one end of the filter into the flow passages in that end. Because the other ends of the flow passages are plugged the fluid can only exit the filter through the porous walls of the flow passage and into flow passages adjacent to the flow passage into which the fluid is introduced. The flow passages into which the fluid passes are open at the opposite end from fluid introduction. Typically, a pressure differential is maintained between the flow passage into which the fluid is initially introduced and the flow passages adjacent thereto to drive the fluid through the flow passage walls. The particulate matter contained in the fluid which is of a size greater than the pores in the walls of the flow passage is retained on the wall of the flow passage into which the fluid is introduced. The fluid flowing out of the opposite end of the filter is substantially free of particulates of a size greater than the pores found in the walls of the flow passages. In an embodiment, the manufacture of the wall flow filters is adapted to produce walls with relatively uniform pores to facilitate the desired separation. The design and manufacture of ceramic wall flow filters is well known in the art and not the subject of this invention. Substrates that can be used as films or membranes which are substantially flat and the fluids to be separated or purified are contracted with one side of the film and either prevented from passing through the film or the desired fluid is passed through the film and collected on the opposite side and the undesired material is retained on the original surface of contact. In other embodiments, the substrate is arranged in another way in a device having an inlet for feeding the fluid to be separated and an exit for recovering the purified fluid. This exit may be remote from the actual separating species. Examples of structures of this type are wall flow filters, hollow fiber membranes and spiral wound membranes systems.
In the devices in which these membranes or filters are incorporated uniformity in fabrication can allow consistent end use performance thus eliminating undesired fluids or particulate matter from flowing into the recovered fluid. If the membranes or filters have pores greater than the desired pore size or of too large of a range of pore sizes undesired particulate matter can pass through the membranes or filters or the membranes or filters do not function in an efficient manner. Such problems may render them unsuitable for use. Thus it is desired to identify membranes or filters and systems containing them which due to too large pore sizes, small pore sizes, or a wide range of pore sizes cannot perform the separation as required. Methods and apparatus for identifying defects in wall flow filters are known in the art, see Kato, US 2009/0051909; Gargano et al US 2007/0022724; Gargano et al US 2007/0238191; Hijikata et al U.S. Pat. No. 5,102,434; and Zoeller, III U.S. Pat. No. 7,520,918; all incorporated herein by reference. All of these disclosed systems and methods relate to identifying gross defects in wall flow filters and require the use of highly directional light sources, lasers, wherein a very thin sheet of light is used to locate the particulate matter exiting the wall flow filters. These methods require that the thin sheet of light be located at a finite distance from the surface of the wall flow filter.
The pore sizes of wall flow filters are conventionally determined utilizing a mercury porosimetry test. This test requires removing small sections of a wall flow filter for analysis. Thus measurement of the pore size of a wall flow filter using this test destroys the wall flow filter. Miyashita US Publication 2006/0174695, page 3 paragraphs 0033 to 0035, discloses systems such as described in the above described patents and patent publications wherein the pore size of a wall filter can be estimated. This requires measurement of the size of particulates fed to the wall filter and the addition of analytical devices which analyze the size and distribution of particles exiting the wall flow filter. Examples of such analytical devices include light scattering type particle counters, centrifugal sedimentation or gravity sedimentation type particle size measuring device and specialized image processing devices capable of measuring the particle sizes and particle size distributions. Some of these methods require complex equipment or analysis of data and often a significant amount of time is required to perform the analysis.
There is still a need for systems and methods of identifying membranes, filters and systems containing the membranes or filters which contain pores of unacceptable size or unacceptable pore size distribution, which operate in a non-destructive fashion, which identify these problems in a timely manner, such as part of the manufacturing process and which do not require complex analytical measuring devices. It is further desirable that such systems provide results in a reasonably rapid manner.

System and method for analyzing pore sizes of substrates


A semiconductor device that permits effective use of a region positioned under a positional detection mark or an external electrode, i.e., the region that has not been conventionally utilized may be provided. In a semiconductor device including a lower layer, a shielding film and an upper layer, the lower layer includes at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element. The shielding film is formed on the lower layer and shields an energy beam used for detecting a positional detection mark. The upper layer includes a positional detection mark formed on the shielding film.

1. Field of the Invention
The present invention relates generally to semiconductor devices and manufacturing methods thereof, and more particularly, to a semiconductor device which permits the area occupied by positional detection marks or the like to be reduced and a manufacturing method thereof.
2. Description of the Background Art
In conventional manufacturing processes of semiconductor devices, positional detection marks are used in order to improve the positional precision of circuit patterns transferred by means of photolithography. FIG. 25 is a cross sectional view of a semiconductor device having conventional positional detection marks. Referring to FIG. 25, such a conventional semiconductor device will be described.
Referring to FIG. 25, the conventional semiconductor device includes a semiconductor substrate 101, first to third interlayer insulating films 102, 108 and 110, and a positional detection mark 112. First interlayer insulating film 102 is formed on a main surface of semiconductor substrate 101. Second interlayer insulating film 108 is formed on first interlayer insulating film 102. Third interlayer insulating film 110 is formed on second interlayer insulating film 108. Grooves 111a to 111h serving as positional detection mark 112 are formed on the surface of third interlayer insulating film 110. Positional detection mark 112 is used as an alignment mark in the process of photolithography to an aluminum film or the like formed on third interlayer insulating film 110. Note that, in a region not shown in FIG. 25, elements such as transistors and interconnections are formed depending upon the function of the semiconductor device.
Herein, grooves 111a to 111h serving as positional detection mark 112 are simultaneously formed in the process of forming in the process of forming through holes in third interlayer insulating film 110. More specifically, in the process of photolithography for through holes formed in third interlayer insulating film 110, a resist pattern is formed on the region to form positional detection mark 112 in third interlayer insulating film 110. In the process of anisotropic etching to form the through holes in third interlayer insulating film 110, a part of third interlayer insulating film 110 is used, using the resist pattern as a mask, and grooves 111a to 111h result.
As shown in FIG. 25, conventionally, in the region positioned under positional detection mark 112, positional detection marks or interconnections are not formed in the process of forming elements on the first or second interlayer insulating film. This is for the purpose of preventing errors in positional detection. More specifically, normally, light is directed to positional detection mark 112 and light reflected therefrom is used for detection of the mark. If structures such as interconnections are present in the underlying layer of positional detection mark 112, the light for detecting positional detection mark 112 could reach such structures through first to third interlayer insulating films 102, 108 and 111. Then, these structures cause the light for detecting positional detection mark 112 to scatter, which impedes the accurate detection of positional detection mark 112. In order to prevent this problem, structures such as interconnections or positional detection marks are not conventionally formed in the underlying layer of positional detection mark 112.
Meanwhile, as semiconductor devices have become more highly integrated and complicated, layered structures are employed for the devices. Thus, a positional detection mark is necessary for each layer. As shown in FIG. 25, however, only one positional detection mark may be formed at one position, and therefore the area occupied by positional detection marks increase as the number of layers increases.
One method of manufacturing a semiconductor device to solve this disadvantage is disclosed by Japanese Patent Laying-Open No. 2-229419, wherein positional detection marks in different layers are formed at the same position so as to overlap two-dimensionally. In the disclosed semiconductor device, however, errors or the like in the manufacturing process during forming positional detection marks cause positional detection marks to be erroneously recognized as is the case with the above conventional case, if the positions of positional detection marks in the upper and lower layers are even slightly shifted from each other.
Another method of manufacturing a semiconductor device, proposed in order to solve the above-described disadvantage is disclosed by Japanese Patent Laying-Open No. 3-177013, wherein a light beam for detecting a positional detection mark is obliquely irradiated and only the positional detection mark in a layer of interest is detected. By this method, however, other positional detection marks formed in the underlying layers of a positional detection mark to be detected are also recognized through the interlayer insulating film as is the case with the above conventional method, and it was difficult to completely prevent the erroneous detection of positional detection marks in the underlying layers.
In the conventionally proposed semiconductor devices including positional detection marks, the influence of other positional detection marks formed in the underlying layer of a positional detection mark of interest cannot be eliminated, and it was difficult to form positional detection marks in a layered manner while preventing erroneous recognition of such positional detection marks.
Referring to FIG. 26, a conventional semiconductor device includes a semiconductor substrate 101, an interlayer insulating film 102, a bonding pad 134a, and a glass coat 135. Interlayer insulating film 102 is formed on semiconductor substrate 101. Bonding pad 134a is formed on interlayer insulating film 102. Glass coat 135 is formed on interlayer insulating film 102 and bonding pad 134a, and has an opening in the region positioned on bonding pad 134a.
As shown in FIG. 26, in the region positioned under bonding pad 134a serving as an external electrode for the semiconductor device, conventionally, no such structure as interconnections is formed. This is because the insulation property of interlayer insulating film 102 could deteriorate by damages such as cracks made in interlayer insulating film 102 under bonding pad 134a, at the time of thermo-compression bonding of an interconnection of gold or the like to bonding pad 134a. If the insulation property of interlayer insulating film 102 thus deteriorates, and an interconnection is formed under bonding pad 134a, the interconnection and bonding pad 134a could be short-circuited, which causes the erroneous operations of the semiconductor device.
Thus, conventionally, in the region positioned under positional detection mark 112 (see FIG. 25) or under bonding pad 134a (see FIG. 26), no structure such as interconnections is formed, in other words, the region is a so-called dead (unused) space. However, today, as semiconductor devices are to be more miniaturized and highly integrated, there arises a need to efficiently use such unused spaces.
It is one object of the invention to provide a semiconductor device which permits effective use of a region positioned under positional detection marks or external electrodes, in other words, the region which has not been conventionally used.
Another object of the invention is to provide a method of manufacturing a semiconductor device which permits effective use of a region positioned under positional detection marks and external electrodes, in other words, the region which has not been conventionally used.
A semiconductor device according to one aspect of the present invention includes a lower layer, a shielding film, and an upper layer. The lower layer includes at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element. The shielding film is formed on the lower layer and shields an energy beam used for detecting a positional detection mark. The upper layer is formed on the shielding film and includes a positional detection mark.
Herein, the quality testing element refers to an element used for operations to control the manufacturing steps and the quality of the semiconductor device, operations including confirmation of the conduction of interconnections or confirmation of the thickness of films formed in the device. The circuit element refers to an element necessary for the operation of the semiconductor device such as electrodes and interconnections in the device. The energy beam refers to light or an electron beam that can be used for detecting a positional detection mark.
Therefore, in the semiconductor device according to the above aspect of the invention, the presence of the shielding film prevents the energy beam from reaching the lower layer at the time of irradiating an energy beam upon a positional detection mark in the upper layer for the purpose of detecting the mark. This prevents errors in detecting the position of a positional detection mark in the upper layer, errors caused by the scattering of the energy beam by the presence of a positional detection mark in the lower layer. As a result, in the region positioned under the positional detection mark in the upper layer, a lower layer may be formed through the shielding film. Thus, the area occupied by positional detection marks or the like in the surface of the semiconductor device may be reduced. Consequently, a larger number of semiconductor devices may be obtained from a semiconductor wafer in the same size as the conventional case.
In the device according to the above aspect of the invention, the shielding film may have a substantially flat upper surface.
Thus, irregularities to scatter the energy beam used for detecting positional detection marks are not present on the upper surface of the shielding film. As a result, errors in detecting positional detection marks in the upper layer caused by the scattering of the energy beam according to irregularities on the upper surface of the shielding film may be more effectively prevented.
In the semiconductor device according to the above aspect of the invention, the shielding film may be a metal film.
In the semiconductor device according to the above aspect of the invention, the metal film may be an aluminum film.
Thus, the shielding film may be formed as well at the time of forming an aluminum interconnection. As a result, the shielding film may be formed without increasing the number of manufacturing steps as compared to the conventional case.
In the semiconductor device according to the above aspect of the invention, the lower layer may include an insulating film, and the positional detection mark may be a groove formed in the insulating film.
In the semiconductor device according to the above aspect of the present invention, the lower layer may include a lower metal film, and the positional detection mark may be a groove formed in the lower metal film.
In the semiconductor device according to the above aspect of the present invention, the upper layer may include an upper insulating film, and the positional detection mark may be a groove formed in the upper insulating film.
In the semiconductor device according to the above aspect of the present invention, the upper layer may include an upper metal film, and the positional detection mark may be a groove formed in the upper metal film.
In the semiconductor device according to the above aspect of the present invention, the positional detection mark may be formed from a polysilicon film.
A semiconductor device according to another aspect of the invention includes a lower layer, an isolation insulating film, and an upper layer. The lower layer includes at least one of a positional detection mark and a quality testing element. The isolation insulating film is formed on the lower layer. The upper layer is formed on the isolation insulating film and includes at least one selected from the group consisting of the quality testing element, an external electrode, and a dummy layer.
Herein, the external electrode refers to an electrode for connecting a bonding wire for use in transmission of an electrical signal between the semiconductor device and the outside. The dummy layer refers to a structure not directly related to the essential operations of the semiconductor device. The dummy layer includes, for example, a dummy pattern for improving the flatness of the device in the planarization step in the manufacture of the semiconductor device.
Therefore, in the semiconductor device according to the above aspect of the invention, the upper layer and the lower layer are formed upon each other through the isolation insulating film, the region positioned under the quality testing element or external electrode, in other words, the region which has not been effectively used conventionally, can be effectively used for forming positional detection marks. As a result, the area occupied by the quality detecting element or the like may be reduced.
In the semiconductor device according to the aspect of the invention, the lower layer may include an insulating film, and the positional detection mark may be a groove formed in the insulating film.
In the semiconductor device according to the aspect of the invention, the lower layer may include a metal film, and the positional detection mark may be a groove formed in the metal film.
In a method of manufacturing a semiconductor device according to another aspect of the invention, the lower layer including at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element is formed. A shielding film for shielding an energy beam used for detecting a positional detection mark is formed on the lower layer. The upper layer including a positional detection mark is formed on the shielding film.
As a result, a semiconductor device having a lower layer including a positional detection mark or the like through a shielding film under an upper layer including a positional detection mark may be readily obtained.
In the method of manufacturing a semiconductor device according to the above aspect of the invention, an interlayer insulating film may be formed between the lower layer and the shielding film, and the upper surface of the interlayer insulating film may be planarized (flattened).
Consequently, irregularities according to the lower layer structure can be prevented from forming on the surface of the shielding film.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.

Semiconductor device comprising layered positional detection marks and manufacturing method thereof


The present invention relates to a method for collecting inter-operator charging information in a group communications system comprising a first group communications network element and a second group communications network element. An intermediate charging information collection unit is provided in an interface between the group communication network elements. The charging information collection unit examines a group communications message received from the first group communications network element or the second group communications network elements. A charging information unit is generated based on at least a portion of the message and the charging information unit is applied for inter-network charging to charge for use of inter-network resources.

One special feature offered in mobile communications systems is group communication. Conventionally group communication has been available only in trunked mobile communications systems, such as Professional Radio or Private Mobile Radio (PMR) systems, such as TETRA (Terrestrial Trunked Radio), which are special radio systems primarily intended for professional and governmental users. Group communication is also becoming available in public mobile communications systems. New packet-based group voice and data services are being developed for cellular networks, especially in GSM/GPRS/3G network evolution, wherein the approach is based on the idea of a group communication service being provided as a packet-based user or application level service so that the underlying cellular network only provides the basic connections (i.e. IP connections) between the group communications applications in user terminals and the group communication service. When this approach is employed in push-to-talk communication, the concept is also referred to as a push-to-talk over cellular (PoC) network.
Generally, in group voice communication with a "push-to-talk, release-to-listen" feature, a group call is based on the use of a pressel (PTT, push-to-talk switch) in a telephone as a switch: by pressing a PTT the user indicates his or her desire to speak, and the user equipment sends a service request to the network. The network either rejects the request or allocates the requested resources on the basis of predetermined criteria, such as the availability of resources and priority of the requesting user. At the same time, a connection is also established to all other active users in the specific subscriber group. After the voice connection has been established, the requesting user may talk and the other users may listen on the channel. When the user releases the PTT, the user equipment signals a release message to the network, and the resources are released. Thus, the resources are reserved only for the actual speech transaction or speech item, instead of reserving the resources for a "call".
The IMS (IP multimedia subsystem) charging architecture is used for charging of PoC services. The architecture comprises a Charging Collection Function (CCF) for offline charging and an Online Charging System for online charging PoC service-related events, where these entities are connected to a PoC server. The PoC server, performing either a participating PoC function (for a participant of a PoC session) or a controlling PoC function (for a PoC session owner), prepares charging information for the offline and online charging entities. Charging for PoC services is also illustrated in OMA (Open Mobile Alliance) specification "Push-to-talk over Cellular (PoC)-Architecture", candidate version 1.0, 05 Aug. 2005, 167 pages (OMA-AD_PoC-V1—0-20050805-C). The 3GPP specification 3GPP TS 32.272 "Push-to-talk over Cellular (PoC) charging (Release 6)", V6.2.0, December 2005, describes in more detail charging functions that may be carried out in the PoC system. The charging functionality for charging PoC subscribers for use of PoC services is described in these documents. However, besides operator-subscriber charging, there is a need to collect inter-operator charging information to charge for use of inter-operator data transmission resources provided for other operators or service providers, for instance for charging a home network operator for an inter-network connection provided for transferring information to/from a roaming PoC subscriber in a visited network. Such inter-operator charging has been based on the amount of transferred data.

Generation of charging information in group communications system


Systems, methods, and other embodiments associated with iterative decoders are described. According to one embodiment, an apparatus includes a set of decoders that are configured to receive data to be decoded. The apparatus may also include a controller configured to separately control each decoder to initiate a decoding sequence based on an occurrence of a transition point. The transition point is a global transition that occurs iteratively for the set of decoders and is based on iterations in a decoding sequence.

The background description provided herein is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventor(s), to the extent the work is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.
Many forms of electronic communications use iterative functions when handling data. For example, when receiving communications in a wireless network a system may use iterative functions for error correction to help ensure the integrity of communicated data. However, in some systems, these functions can become a source of bottlenecks.
Bottlenecks can arise based on certain factors that lead to an increase in inefficiencies. For example, different communication channels may have different signal-to-noise ratios. Less complex systems that use a controller encounter exaggerated latencies when processing data from channels with different characteristics. On the other hand, while using a separate controller for each channel can mitigate this issue, more power is consumed and additional chip space is required for the extra controllers. Accordingly, both single and multiple controller approaches to iterative decoders suffer from disadvantages.

Low latency SIMD architecture for iterative decoders


A thin film magnetic disk (and a disk drive using the magnetic disk) with improved recording performance having a thin seed layer consisting of tantalum (Ta), a suitable underlayer and a CoPtCrB magnetic layer is described. The underlayer is preferably a Cr alloy with a grain size which is smaller than that of pure Cr. CrTi is suitable as an underlayer. An appropriate overcoat such as hydrogenated carbon can be applied.

The thin film magnetic recording disk in a conventional hard disk drive assembly typically consists of a rigid substrate, an underlayer of chromium (Cr) or a Cr-alloy, a cobalt-based magnetic alloy deposited on the underlayer, and a protective overcoat over the magnetic layer. A variety of disk substrates such as NiP-coated Al--Mg, glass, glass ceramic, glassy carbon, etc., have been used. The microstructural parameters of the magnetic layer, i.e., crystallographic preferred orientation, grain size and magnetic exchange decoupling between the grains, play key roles in controlling the recording characteristics of the disk. The Cr underlayer is mainly used to control such microstructural parameters as orientation and grain size of the cobalt-based magnetic alloy. When the Cr underlayer is deposited at elevated temperature (>150 C.) on a NiP-coated Al--Mg substrate a [200] preferred orientation (PO) is usually formed. This PO promotes the epitaxial growth of [1120] of the cobalt (Co) alloy, thereby improving the in-plane magnetic performance of the disk.
The use of glass substrates gives improved shock resistance and allows thinner substrates to be used. However, it is often observed that media fabricated on glass substrates have higher noise compared with those made on NiP-coated Al--Mg substrates under identical deposition conditions. The reason is that the nucleation and growth of Cr or Cr-alloy underlayers on glass and most non-metallic substrates differ significantly from those on NiP-coated Al--Mg substrate. It is for this reason that the use of an initial layer on the substrate called a seed layer has been proposed. The seed layer is formed between the alternate substrate and the underlayer in order to control nucleation and growth of the Cr underlayer and, therefore, the magnetic layers. Several materials have been proposed in the prior art as candidates for seed layers such as: Al, Cr, Ti, Ni.sub.3 P, MgO, Ta, C, W, Zr, AlN and NiAl on glass and non-metallic substrates. (See for example, Seed Layer induced (002) crystallographic texture in NiAl underlayers, Lee, et al., J. Appl. Phys. 79(8), April 1996, p.4902ff).
In order to control nucleation and growth of the Cr underlayer on glass (or alternate substrates), a variety of seed layers have been reported. H. Kataoka, et al., have reported that the deposition of a tantalum seed layer on glass substrates promotes the [200] orientation in the Cr underlayer which, in turn, promotes the [1120] orientation in the magnetic layer. (IEEE Trans. Mag. 31(6), Nov. 1995, p.2734ff). They compared Cr, Ta, W and Zr for use as seed layers using a fixed underlayer and magnetic layer. The magnetic alloy used in their study was a 27 nm thick ternary CoPtCr alloy. The underlayer was CrTi and was 100 nm thick. The purpose of adding Ti was to increase the lattice spacing for optimum matching with CoCrPt.
One method for improving the recording performance of a magnetic disk medium is the use of a CrTi underlayer, which was suggested by Michealsen, et al. in U.S. Pat. No. 4,245,008. Matsuda, et al., also reported that the addition of Ti to Cr increases the lattice parameters of the Cr to enhance the epitaxial growth of the magnetic layer. (J. Appl. Phys. 79, pp. 5351-53 (1996)). They have also reported that the grain size of CrTi underlayer decreases with increasing the Ti concentration. It should be noted that although sputtered Ti has usually a very small grain size, it is not suitable for use as an underlayer or a seed layer as it promotes the <0001> orientation in the magnetic layer, thereby making it unsuitable for longitudinal recording.
One quaternary alloy which has been proposed for use as a magnetic layer is CoPtCrB. A method of depositing the CoPtCrB alloy is specified in commonly assigned U.S. Pat. No. 5,523,173. The '173 patent describes sputter depositing a chromium or chromium alloy underlayer on a substrate in such a way to achieve a strong [200] crystallographic orientation of the underlayer to achieve a low noise, high coercivity medium. This orientation is achieved by depositing the underlayer on a negatively biased substrate under high temperature, low pressure conditions. The oriented underlayer prevents the subsequently deposited CoPtCrB alloy from orienting itself in its preferred, c-axis vertical orientation. The '173 patent specifies that the CoPtCrB alloy should comprise 4 to 12 at % platinum, 18 to 23 at % chromium and 2 to 10 at % boron. However, the optimum performance of the CoPtCrB on glass substrates is not easily obtained for two major reasons. Firstly, nucleation and growth of the Cr underlayer differ from those of the NiP coated AlMg substrates. In fact, Cr tends to grow with a [110] orientation on glass at T<300 C. This is an undesirable orientation in that it can induce perpendicular anisotropy in the magnetic layer. Secondly, application of bias during deposition of Cr is problematic because glass and most alternative substrates are not conductive.

Thin film magnetic disk with CoPtCrB layer

International Business Machines Corporation


A method and apparatus for delivering therapy to treat ventricular tachyarrhythmias is described. A ventricular tachyarrhythmia can be classified into tachycardia or fibrillation zones using a rate criterion so that the tachyarrhythmia can be treated with either anti-tachycardia pacing or shock therapy, respectively. Rate stability and morphology criteria are employed to determine if a tachyarrhythmia in the fibrillation zone is actually monomorphic ventricular tachycardia which can be treated with ATP.

Tachyarrhythmias are abnormal heart rhythms characterized by a rapid heart rate, typically expressed in units of beats per minute (bpm). Examples of tachyarrhythmias include supraventricular tachycardias (SVT's) such as sinus tachycardia, atrial tachycardia (AT), and atrial fibrillation (AF). The most dangerous tachyarrhythmias, however, are ventricular tachyarrhythmias: ventricular tachycardia (VT) and ventricular fibrillation (VF). Ventricular rhythms occur when re-entry of a depolarizing wavefront in areas of the ventricular myocardium with different conduction characteristics becomes self-sustaining or when an excitatory focus in the ventricle usurps control of the heart rate from the sinoatrial node. The result is rapid and ineffective contraction of the ventricles out of electromechanical synchrony with the atria. Most ventricular rhythms exhibit an abnormal QRS complex in an electrocardiogram because they do not use the normal ventricular conduction system, the depolarization spreading instead from the excitatory focus or point of re-entry directly into the myocardium. Ventricular tachycardia is typically characterized by distorted QRS complexes that occur at a rapid rate, while ventricular fibrillation is diagnosed when the ventricle depolarizes in a chaotic fashion with no identifiable QRS complexes. Both ventricular tachycardia and ventricular fibrillation are hemodynamically compromising, and both can be life-threatening. Ventricular fibrillation, however, causes circulatory arrest within seconds and is the most common cause of sudden cardiac death.
Cardioversion (an electrical shock delivered to the heart synchronously with the QRS complex complex to terminate VT) and defibrillation (an electrical shock delivered without synchronization to the QRS complex to terminate VF) can be used to terminate most tachyarrhythmias, including SVT's, VT, and VF. The electric shock terminates the tachyarrhythmia by depolarizing all of the myocardium simultaneously and rendering it refractory. A class of cardiac rhythm management devices known as an implantable cardioverter defibrillator (ICD) provides this kind of therapy by delivering a shock pulse to the heart when the device detects tachyarrhythmias.
Another type of electrical therapy for tachycardia is anti-tachycardia pacing (ATP). In ventricular ATP, the ventricles are competitively paced with one or more pacing pulses in an effort to interrupt the reentrant circuit causing the tachycardia. Modem ICD's typically have ATP capability so that ATP therapy is delivered when VT is detected, while a shock pulse can be delivered to both VT and VF. Although cardioversion/defibrillation will terminate ventricular tachycardia, it consumes a large amount of stored power from the battery and results in patient discomfort owing to the high voltage of the shock pulses. It is desirable, therefore, for the ICD to use ATP to terminate a tachyarrhythmia whenever possible. Devices have therefore been programmed to use cardioversion/defibrillation shocks to terminate fibrillation and certain high rate tachycardias and to use ATP to treat lower rate tachycardias.
In most ICD's with ATP capability, VF is distinguished from VT using only rate-based criteria and no ATP therapy in the VF zone, so that ATP or shock therapy can be delivered as appropriate. The ventricular heart rate is usually measured by detection of the time between successive R waves (i.e., ventricular depolarizations). A measured ventricular rate is classified as a tachycardia when the rate is in a VT zone, defined as a range of rates above a tachycardia detection rate (TDR) but below a fibrillation detection rate (FDR). A measured ventricular rate above the FDR, on the other hand, is in the VF zone and is classified as ventricular fibrillation. In a typical device, a tachyarrhythmia with a heart rate in the tachycardia zone is treated with ATP therapy in order to avoid an unnecessary painful shock to the patient, and a defibrillation shock is delivered if the pacing fails to terminate the tachyarrhythmia. A commonly cited figure of merit is that for a patient with a normal sinus rhythm of 70 bpm, a rate of 150 bpm is considered tachycardia and a rate of over 200 bpm, fibrillation. The tachycardia detection zone boundary (i.e., the TDR) and the fibrillation detection zone boundary (i.e., the FDR) can also be determined for an individual patient by a procedure in which arrhythmias are purposely induced and then characterized based upon their rate, electrocardiogram waveforms, and response to treatment

ATP therapy for tachyarrhythmias in VF zone


Certain 2-oxo- and 2-thioxoimidazol-4-carboxamides are reported to reduce reperfusion injury which is the injury which occurs when molecular oxygen is reintroduced into an ischemic tissue. These compounds could be used to prevent much of the damage which occurs to the heart of a heart attack victim.

Heart attack is a leading cause of death and results most commonly from an imparment of the blood supply to the heart muscle (myocardium). Oxygen deprivation to the heart muscle, cardiac ischemia, results in impaired function and eventually myocardial cell death and necrosis (infarction). Survival of myocardial infarction victims depends on the extent or size of the infarcted area which has a femoral component. Transformation of cells in the ischemic area from reversibly to irreversibly injured occurs over the course of several hours. Without reperfusion infarct extension continues for up to six hours after the start of an ischemic event. Establishment of reperfusion of the ischemic area stops an evolving myocardial infarction and salvages tissue. However, recent findings suggest that reperfusion of the ischemic tissue with oxygenated blood results in injury caused by oxygen derived free radicals.
2-Oxo- and 2-thioxo-imidazolecarboxamides are known from British Patent number 2,110,668 to possess antiallergy activity. More recently, the antioxidant properties of 2,3-dihydro-5-methyl-2-oxo- and 2-thioxo-1H-imidazole-4-carboxamide and 2,3-dihydro-N,N,5,-trimethyl-2-oxo- and 2-thioxo-1H-imidazole-4-carboxamide were reported by R. C. Smith, et al., Biochemical Pharmacology, 36(9), 1457-1460 (1987). Now it has been discovered that the 2-thioxoimidazolecarboxamides when administered to a patient prior to an ischemic event, during an ischemic event, or during the period of time subsequent to an ischemic event during which reperfusion damage occurs, prevent or lessen the damage which normally occurs when circulation is restored to the portion of the heart formerly deprived of blood.

Method for reducing injury with imidazol-2-thionecarboxamides


A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.

1. Field of the Invention
Embodiments of the present invention relate to a top-emitting nitride-based light-emitting device, and a method of manufacturing the same, and more particularly, to a top-emitting nitride-based light-emitting device with improved ohmic characteristics and luminous efficiency and a method of manufacturing the same.
2. Description of the Related Art
Transparent conducting thin films are used for a wide variety of applications in optoelectronics, display, and energy industries. In the field of light-emitting devices, research is being actively conducted around the world to develop a transparent conducting ohmic electrode structure that allows efficient hole injection and light emission.
Transparent conducting oxides (TCOs) and transparent conducting nitrides (TCNs) are currently attracting a great deal of interest. Typical examples of TCO are indium oxide (In2O3), tin oxide (SnO2), zinc oxide (ZnO), and indium tin oxide (ITO). The most commonly used TCN is a titanium nitride (TiN). However, using only TCO or TCN film as a p-type transparent ohmic electrode for a top-emitting gallium nitride (GaN)-based light-emitting device may cause many problems since the TCO or TCN film exhibits high sheet resistance, high light reflectivity, and low work function under conditions for film formation.
The first problem is that the above-enumerated transparent conducting thin films are not suitable for use in large-area, large-capacity, and high-brightness light-emitting devices because their high sheet resistance of approximately 100 Ω/cm2 will hinder current spreading along a lateral direction (parallel to interlayer between layers) and vertical hole injection during film formation using physical vapor deposition (PVD) such as sputtering, electron-beam (e-beam) or heat evaporation, or pulsed laser deposition (PLD).
The second problem is that a p-GaN surface being exposed to plasma ions when the transparent conducting film is deposited using plasma can be easily damaged, thus degrading electrical characteristics.
The third problem is that the luminous efficiency of the transparent conducting film decreases due to its high reflectivity with respect to light emitted by a GaN-based light-emitting device.
The last problem is that when a TCO is used as an electrode in direct ohmic contact with a GaN-based compound semiconductor, insulating gallium oxide (Ga2O3) and magnesium oxide (MgO) are formed on the GaN surface during deposition of the thin film on the GaN due to the strong oxidizing power of Ga and Mg (a p-type dopant), thereby making it difficult to achieve a high quality ohmic contact electrode.
Meanwhile, light-emitting devices are classified into top-emitting light-emitting diodes (TLEDs) and flip-chip LEDs (FCLEDs). In commonly used TLEDs, light exits through an ohmic contact layer in contact with a p-cladding layer. However, due to the high sheet resistance of a p-cladding layer with a low hole concentration, a current spreading layer with a good current spreading capability is essentially required in order to achieve a high brightness TLED. That is, a current spreading layer with low sheet resistance and high light transmittance must be used as an ohmic contact layer to provide excellent hole injection, current spreading, and light emission.
TLEDs typically use a structure in which a nickel (Ni)/gold (Au) ohmic contact layer is formed on a p-cladding layer. The Ni/Au ohmic contact layer annealed in an oxygen (O2) ambient has been known to have excellent specific contact resistivity of approximately 10−4 to 10−3 Ωcm2 and semi-transparency. When the conventional ohmic contact layer is annealed at temperature of 500 to 600° C. in an O2 ambient, a nickel oxide (NiO) that is a p-type semiconductor oxide is formed on the island-like Au layer and between the Au layer and a p-GaN, thereby reducing a Schottky barrier height (SBH) at the interface between the p-GaN cladding layer and the Ni ohmic contact layer. Thus, holes that are majority carriers can be easily injected into the surface of the p-cladding layer.
Furthermore, annealing of the Ni/Au ohmic contact layer on the p-cladding layer results in disassociation of a Mg—H complex in GaN, which reactivates Mg dopants by increasing the concentration on the surface of GaN. As a result of reactivation, effective carrier concentration increases above 10 weight percent on the surface of the p-cladding layer. This causes tunneling conductance between the p-cladding layer and the ohmic contact layer containing NiO, thus achieving an ohmic contact with good ohmic conductance and low specific contact resistivity.
However, due to their low luminous efficiency, TLEDs using a semi-transparent Ni/Au ohmic contact layer suffer the limitation of not being able to realize the next generation light-emitting devices with large capacity and high brightness.
In a FCLED design, light is emitted through a sapphire substrate using a reflective layer in order to increase the amount of heat emitted during its operation as well as luminous efficiency. However, the FCLED also suffers from problems such as high resistance due to poor adhesion and oxidation of the reflective layer.
Thus, as a solution to overcome the limitations of TELDs and FCLEDs, the use of a TCO completely excluding Au, such as indium tin oxide (ITO), with superior light transmittance over a semi-transparent Ni (NiO)/Au used as a conventional p-ohmic contact layer, has been proposed in various literatures [IEEE PTL, Y. C. Lin, etc. Vol. 14, 1668 and IEEE PTL, Shyi-Ming Pan, etc. Vol. 15, 646]. The development of a TLED with an ITO ohmic contact layer exhibiting improved output power over a conventional one employing a Ni/Au ohmic contact has been recently discussed in a paper [Semicond. Sci. Technol., C S Chang, etc. 18 (2003), L21]. Furthermore, U.S. Pat. No. 6,297,947 proposes a method of fabricating a LED with improved light transmittance and electrical characteristics by combining thin oxidized Ni/Au or Ni/silver (Ag) with ITO. However, the proposed method is not suitable for use in high volume applications because of high specific contact resistivity and addition of the step of oxidizing the Ni/Au (or Ag).
As described above, there are the following fundamental problems that make it difficult to develop a high quality ohmic contact electrode.
First, a p-GaN has high sheet resistance above 104 Ω/cm2 due to its low hole concentration.
Second, a SBH is increased at the interface between a p-GaN and an electrode due to the absence of a transparent electrode material having a work function higher than the p-GaN, thereby hindering vertical hole injection.
Third, like most materials having an inverse relationship between electrical and optical characteristics, transparent electrodes with high light transmittance have high sheet resistance, thereby significantly reducing lateral current spreading.
Fourth, insulating Ga2O3 and MgO are formed on a GaN surface when a transparent conducting layer is deposited directly on the p-GaN, thereby degrading electrical characteristics of a light-emitting device.
Fifth, the surface of a p-GaN can be easily damaged by plasma during sputtering that allows for formation of a transparent conducting layer with a low sheet resistance.
Due to the above-mentioned problems, the amount of heat generated between the p-GaN and the ohmic contact layer increases, thus decreasing the life span and reliability of a light-emitting device.

Top-emitting nitride-based light-emitting device with ohmic characteristics and luminous efficiency

Gwangju Institute of Science and Technology


A mechanism included in a convergent-divergent nozzle connected to an aft portion of a gas turbine engine, which mechanism includes a convergent flap configured to be kinematically connected to the aft portion of the gas turbine engine, a divergent flap pivotally connected to the convergent flap and configured to be kinematically connected to the aft portion of the gas turbine engine, at least one actuator configured to be connected to the aft portion of the gas turbine engine and to mechanically prescribe the position of the convergent flap and the divergent flap by moving through one or more positions, and at least one biasing apparatus. The biasing apparatus is configured to position at least one of the convergent flap and the divergent flap independent of the positions of the actuator by substantially balancing a force on the at least one of the convergent flap and the divergent flap produced by a gas pressure on the nozzle.

The present invention relates to convergent-divergent nozzles used in gas turbine engines. In particular, the present invention relates to convergent-divergent nozzles with a floating area ratio.
Prior gas turbine engines have, in some configurations, included exit nozzles attached to the aft end of the engine. Exit nozzles are commonly employed to produce additional thrust for the engine by accelerating the working medium gas, for example air, leaving the aft end of the main engine, for example via the low pressure turbine, through the nozzle. Exit nozzles accelerate the air leaving the engine, and therefore produce useful thrust, by prescribing the nozzle area for particular exit pressures inside the nozzle. One such exit nozzle is the variable convergent-divergent nozzle. Prior variable convergent-divergent nozzles commonly include convergent-divergent flap sets arranged circumferentially about the main axis of the engine to form a substantially circular annular nozzle extending aft of, for example, the low pressure turbine. The convergent-divergent flap sets are commonly connected to an annular ring, sometimes referred to as a sync ring, which is in turn connected to an engine casing. The convergent flap in each of the convergent-divergent flap sets declines generally toward the main axis of the engine as the flap extends aftwardly. The divergent flap in each of the convergent-divergent flap sets may be pivotally connected to the convergent flap and inclines generally away from the main axis of the engine as the flap extends aftwardly. The circumferentially arranged convergent-divergent flap sets therefore form an annular nozzle whose cross-sectional area decreases from the forward end of the nozzle to a throat generally defined by the pivotal connection between the convergent and divergent flaps and then increases from the throat to the nozzle exit.
In order to operate efficiently, variable convergent-divergent nozzles are configured to position the convergent and divergent flaps, and thereby the annular shape of the entire nozzle, to optimize engine performance. The position of the convergent and divergent flaps, and thereby the annular shape of the nozzle is commonly represented by the ratio of the cross-sectional area of the nozzle at the exit (AE) divided by the cross-sectional area of the nozzle at the throat (AT), or AE/AT. The nozzle pressure ratio (NPR) is equal to the total pressure at the nozzle throat (PT) divided by the ambient pressure (PAmb), or NPR=PT/PAmb. Convergent-divergent nozzles function generally by designing AE/AT for critical flight conditions (NPR) in order to produce useful thrust by extracting as much energy as is practicable from the working medium gas flowing through the nozzle.
Prior variable convergent-divergent nozzles have used various means to vary the position of the convergent and divergent flaps for different engine conditions. For example, some prior convergent-divergent nozzles have mechanically prescribed the position of the convergent and divergent flaps through a kinematic mechanism driven by one or more actuators to tune AE/AT for specific engine conditions. Prior convergent-divergent nozzles have also employed kinematics that vary AE/AT with respect to AT to achieve improved performance at multiple engine operating conditions. This arrangement allows for a single valued AE/AT for all AT without the weight and complexity of independently controlling AE/AT. Other prior convergent-divergent nozzles have employed a toggling configuration triggered by the pressure inside the nozzle, which acts to position the divergent flaps for low and high AE respectively (low and high mode). Nozzles employing such a toggling configuration are considered to have two available values of AE for each AT. At low AT, which is typical of aircraft cruise and low values of NPR, a low value of AE/AT is desirable. At relatively high values of AT a higher value of AE/AT is desirable, which corresponds to conditions associated with aircraft acceleration. Thus the low mode (low AE/AT) condition corresponds to relatively low values of NPR and high mode (higher AE/AT) corresponds to relatively high values of NPR.
Prior variable convergent-divergent nozzles have several disadvantages with respect to AE/AT. In prior nozzles independently controlling AT and AE, one disadvantage is weight and complexity (design and control). For scheduled (single valued) AE/AT nozzles, one disadvantage is an inability to run optimally at low and high NPR (cruise and acceleration). More generally, prior nozzle designs have varied the nozzle geometry to optimally position the convergent and divergent flaps at low mode and high mode, but have failed to vary the convergent and divergent flaps position through an intermediate mode of engine operation between low and high modes. Therefore, prior nozzle configurations have failed to advantageously position the convergent and divergent flaps for a substantial number of NPR values encountered during engine operation, thereby causing sub-optimal engine performance at many of the NPR values encountered.

This patent is subject to a terminal disclaimer.


A dosing pump (19) doses antiscalant into a membrane-based water treatment system (1). The dosing pump (19) includes a displacement body for pumping antiscalant into the membrane-based water treatment system (1) in doses. A motor drives the displacement body. A control module controls the motor. The control module is configured to vary the dosage of antiscalant pumped into the water treatment system (1) based on a temperature corrected system variable (SVTc) being based on a plurality of operating variables of the water treatment system (1).

Membrane-based water desalination and water treatment with reverse osmosis (RO) or nanofiltration (NF) is a popular technology that greatly contributes in solving the problem of water scarcity and water pollution in different countries regardless of geographical location. RO is a membrane technology that is well established and widely used in membrane-based water desalination (e.g. seawater, brackish water, treated wastewater, impaired waters, produced water and others) and water treatment (e.g. surface water, groundwater, water reuse).
A widely used performance indicator for such systems is "recovery" or "yield" being defined as the ratio between the outflow of permeate, i.e. water produced by the system, and the inflow of feed, i.e. water conveyed to the system. The water discharged by the system is referred to as concentrate or brine. Membrane-based water treatment systems may comprise one or more membranes. In a multiple-membrane system, the membranes may be arranged in series and/or in parallel, wherein the concentrate of membrane i may serve as feed to the subsequent membrane i+1.
The system recovery is always lower than 100%, and it depends on the salt content of the feed water and other factors like membrane scaling. Scaling is a type of membrane fouling that blocks the membrane and reduces its filtration and water diffusion performance. Scaling occurs when one or more scale forming salt species exceed their solubility limits, supersaturate and precipitate. The increased concentration of scale forming species occurs when the recovery (permeate water/feed water) increases, which enhances the concentration polarization in the region next to the membrane surface on the feed side. Therefore, the recovery is limited by scaling.
Furthermore, membrane fouling, particularly scaling, deteriorates membrane performance, which results in limited membrane life, higher use of pressure and thus energy, more frequent cleaning of the membrane and system downtime. The consequences are costly operating expenses and limited system performance. Scaling is a phenomenon where precipitation of minerals/salts in solution causes them to form nuclei that promote crystallization (mineral growth) and ultimately produce scaling (fouling) onto the membrane. Precipitation starts when the activity of ions reaches their saturation limit and the solution becomes supersaturated. The risk or extent of scaling can be reduced or even prevented by using a chemical additive known as antiscalant. Antiscalants are commercially available chemical products designed for being added into the feed water stream of a membrane system against scaling. Antiscalants usually come with a dosage recommendation by the antiscalant manufacturer to achieve a target recovery.
However, the most efficient dose of an antiscalant is highly application and system dependent. The antiscalant manufacturers' dosage recommendations are often overestimated to guarantee a promised target recovery in a wide range of applications and systems. Apart from an ineffective overconsumption of costly antiscalant, such overdosing of antiscalant creates operational problems, for instance a membrane's ability to be fully recovered by a cleaning-in place (CIP) can be negatively affected by an over-dosage of antiscalant. Overdosed and thus ineffective antiscalant may end up in the concentrate stream being discharged into an external water body or a sewer drain. This creates problems for water authorities and personal responsible for the wastewater treatment plant and constitutes an environmental pollution of the water receiving body (natural or wastewater treatment plant). As a result, the membrane-based water treatment system may be shut down by authorities or penalties may be imposed on operators of the system.

Method for dosing antiscalant into a membrane-based water treatment system


A process for hydrodewaxing a hydrocarbon feedstock boiling above about 350.degree. F. by contacting the feedstock and hydrogen at a hydrogen pressure of from about 300 to about 2000 psig at a temperature of 400.degree. to 900.degree. F. and at a space velocity of about 0.1 to about 10.0 LHSV with a catalyst comprising about 0.1 to about 23 wt. % of an oxide of a Group VIII metal, such as nickel, or an oxide of a Group VIB metal, such as molybdenum; supported on a porous alumina support containing about 50 to about 85 wt. % of a crystalline alumino-silicate zeolite of the ZSM-5 type based on the weight of the support. The catalyst is further characterized by having greater than 60% of the pore volume between 45-600 Angstroms in the 70-200 Angstrom range. The process is especially useful for dewaxing lubricating oil basestocks.

1. Field of the Invention
This invention relates to a process for hydrodewaxing a hydrocarbon oil feedstock. More particularly, this invention is concerned with a catalytic process for hydrodewaxing a hydrocarbon oil feedstock such as a light hydrocarbon feedstock. It is further concerned with a process for manufacturing a high Viscosity Index (VI) distillate lubricating oil stock of low pour point and good stability.
In the hydrodewaxing process of this invention a waxy hydrocarbon oil feedstock, for example, and hydrogen are contacted at an elevated temperature and pressure with a catalyst comprising a specified amount of at least one metal oxide selected from the group consisting of an oxide of a Group VIII metal, such as an oxide of nickel or cobalt and an oxide of a Group VIB metal, such as an oxide of molybdenum or tungsten, supported on a porous support comprising a matrix or binder and a crystalline aluminosilicate zeolite.
In the catalytic hydrodewaxing process of this invention a hydrocarbon oil feed, such as a waxy hydrocarbon fraction, is contacted with hydrogen and the catalyst, which has a specified pore size distribution, in a manner such that a high viscosity index hydrocarbon oil is achieved in high yield.
2. Prior Art
Paraffin distillates and residual oils leaving the refinery crude stills contain wax and are normally solids at ambient temperatures. The deasphalting and refining processes increase the wax content of the lube feedstocks. Removal of the wax from these fractions is necessary to permit the manufacturing of lubricating oils with the desired low temperature properties. Catalytic and solvent dewaxing are the major processes used in the petroleum industry today for removing this wax.
The catalytic dewaxing process works by selectively cracking the waxy molecules over a zeolite catalyst. This differs from solvent dewaxing, where the wax is removed from the oil based on its solubility when dissolved in a suitable solvent. These different mechanisms for wax removal give the dewaxed oil product from the two processes different properties. Generally the dewaxed oil from solvent dewaxing of lighter feedstocks is obtained in a higher yield and has a higher viscosity index (VI) than that obtained from catalytic dewaxing. The loss in yield and VI observed for catalytic dewaxing compared with solvent dewaxing the same feedstock is called the yield and VI penalty. It is desirable to produce dewaxed oil from catalytic dewaxing without any yield or VI penalty.
The presently available commercial catalytic dewaxing processes which utilize a ZSM-5 containing catalyst work well for producing the heavy neutral oils and bright stocks. However, these processes suffer from severe yield and VI penalties when processing lighter feedstocks.
A number of other processes for catalytic dewaxing of hydrocarbon oils to reduce the temperature at which separation of waxy hydrocarbons occurs have been described in the art.
U.S. Pat. No. 4,743,355 discloses a process in which a waxy hydrocarbon feedstock is converted into a high quality lube oil stock of reduced pour point by hydrodewaxing the feedstock in the presence of catalyst comprising, for example, a porous refractory oxide such as alumina and a crystalline zeolite having a ZSM-5 zeolite structure and passing a portion of the effluent from the hydrodewaxing zone to a hydrocracking zone where it is a hydrocracking catalyst under conditions such that a further reduction in pour point is effected.
U.S. Pat. No. 4,458,024 teaches a single stage hydrotreating and hydrodewaxing process in which a petroleum residua is contacted with a catalyst comprising a ZSM-5 zeolite in an alumina binder. The catalyst employed has about 80% of its pore volume in pores no greater than 100 Angstrom units in diameter and at least 90% of its pore volume in pores no greater than 150 Angstrom units in diameter.
U.S. Pat. No. 3,668,113 discloses a process in which a hydrocarbon fraction is reduced in sulfur and n-paraffin wax content by first contacting the hydrocarbon fraction with a catalyst comprising a hydrogenating component and a crystalline mordenite to remove n-paraffin wax and then contacting the dewaxed fraction with a catalyst comprising a hydrogenating component on a refractory inorganic oxide to remove sulfur.
U.S. Pat. No. 3,700,585 teaches a dewaxing process in which a petroleum feedstock having a boiling point above 350.degree. F. is contacted with a zeolite ZSM-5 or ZSM-8 having an associated hydrogenation component and, optionally, in the presence of hydrogen.
U.S. Pat. No. 3,894,938 discloses a process for dewaxing and desulfurizing high pour point high sulfur gas oil in which the gas oil is first contacted with a ZSM-5 type zeolite which may contain a hydrogenation component in the presence or absence of added hydrogen followed by conventional hydrosulfurization processing.
U.S. Pat. No. 3,980,550 discloses a process for dewaxing a gas oil by contacting the gas oil with hydrogen in the presence of a catalyst such as a ZSM-5 type having at least one multi-valent transition metal, such as zinc, and a noble metal, such as platinum.
U.S. Pat. No. 4,229,282 teaches a catalytic dewaxing process in which a hydrocarbon oil is contacted in the presence of hydrogen with catalyst comprising a dense zeolite, such as a dense ZSM-5 zeolite and a hydrogenation component.
U.S. Pat. No. 4,222,855 discloses a process in which waxy hydrocarbon oils are catalytically dewaxed utilizing a catalyst comprising a hydrogenation metal and a crystalline aluminosilicate such as ZSM-23 or ZSM-35.
U.S. Pat. No. 4,343,692 teaches a hydrodewaxing process in which a petroleum feedstock such as a petroleum distillate or residual fraction and hydrogen are contacted with a catalyst wherein the catalyst is a synthetic ferrierite zeolite containing at least one metal selected from the group consisting of Group VIB, Group VIIB and Group VIII metals.
U.S. Pat. No. 4,810,357 discloses a process for dewaxing relatively heavy or relatively light lube chargestocks in two parallel separate reactors where the catalyst employed in the reactor used for dewaxing the relatively light chargestock is a zeolite catalyst such as ZSM-22, ZSM-23 or ZSM-35 while in the reactor used for dewaxing the relatively heavy chargestock the catalyst used is a zeolite such as ZSM-5, ZSM-11, etc.
U.S. Pat. No. 4,428,862 discloses a process for hydrodewaxing shale oil feeds in which a catalyst comprising a Group VIB metal in a support containing silicalite and a porous refractory oxide.
U.S. Pat. No. 4,510,044 discloses a single stage hydrodewaxing and hydrotreating process in which hydrogen and a petroleum residua is contacted with a catalyst comprising a ZSM-5 type zeolite in an alumina binder having a hydrogenation component and having 90% of its pore volume in pores no greater than 150 Angstroms in diameter.

Catalytic process for dewaxing hydrocarbon feedstocks


Non-glutaraldehyde fixation of an organ or a prosthesis for implantation in a mammal is based upon carbodiimide treatment. An aqueous solution containing a coupling agent, such as EDC, in combination with a coupling enhancer, such as sulfo-NHS, and a high concentration of a diamine cross-linking agent is used. As a result, only minimal surface reduction occurs during fixation, and the resultant products show a dramatic increase in resistance to calcification.

Calcification of glutaraldehyde-preserved or "fixed" bioprosthetic heart valves frequently occurs and leads to failure due to stenosis and regurgitation. In addition, the slow release of glutaraldehyde from the implanted device is cytotoxic. Several methods of tissue cross-linking or fixing that are independent of glutaraldehyde have been presented, and they include acyl azide, photooxidation, epoxy, genipin and carbodiimide. The latter is described in U.S. Pat. No. 5,733,339 issued Mar. 31, 1998. However, it is acknowledged that tissue shrinkage occurs during fixation, and no cross-linking method has yet been perfected that totally avoids tissue shrinkage (J. Heart Valve Dis. 2001; 10(1): 111-124). While this may be of no particular concern with respect to much pericardium or tissue for which tailoring will take place after fixation, it may well be an issue for porcine aortic root leaflets where precise interengagement, i.e. coaptation, is very important and excessive shrinkage may induce insufficient coaptation of the cusps which could render the valve incompetent. Therefore, the need for improved fixation technology that induces only minimum tissue shrinkage still exists, and the search for such technology has continued.


An ice skate base includes a base with an underside to which an ice blade is securely attached. Front and rear holder assemblies are respectively mounted to front and rear portions of the base and are adjustable in the longitudinal direction of the base to suit skaters of different sizes of feet. The front holder assembly further has pivotable arcuate plates so as to be adjusted to suit different feet shapes and to suit a right foot or left foot's shape as desired.

The present invention relates to a universally adjustable ice skate base and, more particularly, to an ice skate base which is adjustable in length and can be selectively adjusted to suit a right foot or left foot and to suit different foot shapes.
In the manufacturing, assembling, packaging, and wearing of ice skates, different sizes of feet and different shapes between right and left feet have been long and unsolved problems. To obviate the aforementioned problems, the present invention provides an improved ice skate base which is adjustable to suit different sizes of feet. Furthermore, the ice skate base can be selectively adjusted to suit a right foot or a left foot. In addition, the ice skate base can be adjusted to suit different foot shapes.


A single-source precursor composition includes R3B.NX3, where B is boron, N is nitrogen, and the R groups and the X groups are selected from hydrogen, alkyl groups, and aryl groups. At least one of the R groups is an alkyl group or an aryl group.

This disclosure relates to precursors for deposition of boron-containing films.
Boron-containing films may be used as coatings on fibers or other substrates for providing oxidation resistance, lubricity, thermal stability, moisture resistance, hardness, or other desirable properties. The boron-containing film may be deposited onto the substrate by vapor deposition from multiple precursors that react in a gaseous state to form the boron-containing coating. As an example, the precursors may include substituted boranes, borazines and/or substituted amines.

Single-source precursor and methods therefor


Embodiments of the present disclosure provide a method and apparatus for device testing via an optical interface. In one instance, the apparatus may comprise a test controller to operate a camera to generate an image to capture test data displayed on a screen of a device under test. The test controller may be configured to extract the test data from the image, analyze the test data, and generate feedback information for the device under test, based at least in part on a result of the analysis of the test data. The camera may be included in the apparatus and communicatively coupled with the test controller. Other embodiments may be described and/or claimed.

Today's computing devices may be equipped with different systems, processes, and applications, which may need testing and debugging at a device production stage or during the device lifetime, in order to develop and maintain intelligent platforms. However, dedicated test features (e.g., special test ports compatible with testing equipment, etc.) may not always be available on a conventional computing device. Further, as computing devices (e.g., mobile devices) become smaller in form factor, it becomes more difficult to find sufficient "real estate" to mount conventional connectors on a device, to enable wired or optical connection between the device and test equipment. In some instances, wireless connections may substitute wired connections for device testing and debugging. However, using wireless connections for device testing may cause some problems typically associated with wireless connectivity, such as privacy and environmental issues.

Using an optical interface between a device under test and a test apparatus


A slide latch is disclosed that slides between an open position and a closed position to releasably secure a panel in the closed position. The slide latch is moved toward the nearest edge of the panel in order to move the latch to the open position.

1. Field of the Invention
The present invention relates to a latching device for releasably securing a closure member, such as a panel or door, in the closed position.
2. Description of the Prior Art
Various types of latching devices for use in securing a first member such as a door, panel or the like in a closed position relative to a corresponding second member such as a door, panel or frame are known.
Some types are termed xe2x80x9cslide latchesxe2x80x9d in that such latches have a body that is slidably supported in a first member such as a door and are biased to engage a second member such as a doorframe when the door is in the closed position. These slide latches are then moved slidably to disengage the latch from the doorframe and allow opening of the door. Examples of such slide latches are disclosed in U.S. Pat. No. 3,841,674, issued to Robert H. Bisbing et al. on Oct. 15, 1974, U.S. Pat. No. 3,850,464, issued to Robert H. Bisbing et al. on Nov. 26, 1974, U.S. Pat. No. 5,628,534, issued to Janerio N. Morgan on May 13, 1997, and U.S. Pat. No. 6,050,618, issued to Loc B. Tieu on Apr. 18, 2000.
The present invention is directed to a latch for use with closure members such as panels, drawers, doors, etc. The latch of the present invention releasably secures a first closure member, such as a door, doorframe, window, panel, or drawer, to a second closure member, such as another door, window, panel, or drawer or a frame surrounding the first closure member. The latch of the present invention includes a latch body and a torsion spring. The latch body has a first cavity which acts as a handle to allow a user to manipulate the latch and to grasp and move the closure member to which the latch is mounted. The latch body also has a second cavity that houses the torsion spring. The first cavity extends obliquely under an over-hanging edge thus providing a grasping surface for the user""s fingers.
The latch body is installed in an aperture in the closure member and is adapted for sliding movement within the aperture. The latch body also has an integral pawl portion which catches the second closure member to secure the first closure member to the second closure member when the latch body is in the closed position. The torsion spring has a pair of arms, one of which presses against the latch body and one of which presses against a side of the aperture within which the latch body is installed. The torsion spring acts to bias the latch body toward the closed position. A beveled surface, provided as part of the pawl portion, cooperates with the second closure member to slide the latch body to the open position as the first closure member is slammed shut. The torsion spring then moves the latch body to the closed position once the second closure member is in registry with the gap between the pawl portion and the bottom surface of the first closure member.


An assembly for mounting a vehicle roof-box on a vehicle roof panel comprises a pair of roof rails disposed on the vehicle roof panel at both sides thereof respectively in a front-rear direction of the vehicle roof panel; a plurality of cross-bars spacedly arranged in the front-rear direction, wherein each cross-bar has two opposing ends removably coupled to the roof rails respectively, wherein the vehicle roof-box is mounted to the cross-bars; and a plurality of securing means configured to removably secure the cross-bars to the roof rails, wherein each of the plurality of securing means includes a first bracket movable along each of the roof rails, and a second bracket screw-coupled to the first bracket to secure the first bracket to each of the roof rails, wherein an end of each of the cross-bars is fixed to the second bracket.

Field of the Present Disclosure
The present disclosure relates to a mounting assembly for a vehicle roof-box, and, more particularly, to a mounting assembly for a vehicle roof-box wherein a vehicle roof-box is easily installed into the vehicle roof panel without damaging the vehicle roof panel and roof rails, and a space between the vehicle roof-box and vehicle roof panel is blocked.
Discussion of Related Art
A space such as a trunk is provided in the passenger vehicle or the shipping vehicle for transporting the goods. However, since the size of the space in which the article can be stored is limited, it is difficult to store the article when the number of articles to be stored is large or the size of the article to be stored is large.
Accordingly, the roof panel of the vehicle is provided with a separate carrier such as a roof box or a roof carrier, so that the goods to be transported can be properly loaded and transported therein.
Especially in recent years, leisure and camping population is increasing, and, thus, there are many vehicles equipped with external mounting means on the roof panel of the vehicle to transport the equipment and articles.
As the external mounting means, the carrier is loaded with the article exposed to the outside. Thus, there is a disadvantage that the article may be damaged during drive of the vehicle and the air resistance may be increased. Therefore, the roof box may be used.
In order to mount the carrier or the roof box, the car maker sometimes ships the vehicle with the pair of roof rails attached to the longitudinal direction of the roof panel of the vehicle.
In order to mount the roof box, two crossbars are fixedly installed in the front and rear direction of the roof rail, and a roof box is mounted on the crossbars. In order to fix the cross bar to the roof rail, a groove is formed or a hole is drilled in a roof rail. Then, the cross bar is mounted by fastening a bracket or a fixing member such as bolts and nuts into the groove or hole.
Therefore, the damage to the rail may be inevitable. In order to replace the roof box with a roof box having a different size, it is necessary to form another holes or grooves.
When the roof rail is formed with many grooves or holes, the structural strength of the roof rail is reduced so much that it is difficult to firmly support the roof box. As a result, grooves or holes can cause noise during the vehicle is running.
As means for reducing the air resistance during running of the vehicle, the front portion and the rear portion of the roof surface of the vehicle are made lower in a structure than the central portion thereof.
Due to the structure of the roof panel of such a vehicle, the roof rail is formed to have a length shorter than the entire length of the roof panel, and the two crossbars fixed to the roof rail are spaced apart from the front and rear ends of the roof panel. A space is formed between the front and rear portions of the roof box and the surface of the roof panel.
If the space is formed in such a state that the front and rear portions of the roof box are not fixed, air is introduced into the space between the bottom surface of the roof box and the roof panel of the vehicle when the vehicle is traveling, thereby causing noise.
In addition, the cross bar is installed on the roof rail, and, thus, a gap is formed between the cross bar and the roof panel. Therefore, when the vehicle travels, the air passes through the gap and causes noise.
In addition, the air resistance during the driving of the vehicle may increase, which may cause problems in safety driving, and the fuel consumption of the vehicle also increases due to the air resistance.
To solve the problems in a conventional approach, the roof rail is in close contact with the roof panel. However, a space is formed between the cross bar and the roof panel and a space is formed between the roof box installed to the cross bar and the roof panel. Furthermore, this may be true for the front and rear portions of the roof box.