text:
|Publication number
|Publication type
|Application number
|Publication date
|Dec 6, 2011
|Filing date
|Nov 11, 2008
|Priority date
|Jun 26, 2002
|Fee status
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|Publication number
|Thomas N. Horsky, Dale C. Jacobson
|Original Assignee
|Semequip, Inc.
|Export Citation
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|Patent Citations (83), Non-Patent Citations (14), Referenced by (8), Classifications (31), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a division of U.S. application Ser. No. 10/519,699, filed on Sep. 14, 2005, which is a national stage application under 35 USC �371 of International Application No. PCT/US03/20197, filed on Jun. 26, 2003, which is a continuation-in-part of U.S. patent application Ser. No. 10/183,768, now U.S. Pat. No. 6,686,595. This application also claims priority and the benefit of U.S. Provisional Patent Application No. 60/463,965, filed on Apr. 18, 2003, entitled "An Ion Implantation Device and Method of Semiconductor Manufacturing by the Implantation of Boron Hydride Cluster Ions" and U.S. application Ser. No. 10/183,768, filed on Jun. 26, 2002, entitled Electron Impact Ion Source.
1. Field of the Invention
The present invention relates to a method of semiconductor manufacturing in which P-type doping is accomplished by the implantation of ion beams formed from ionized boron hydride molecules, said ions being of the form BnHx + and BnHx −, where 10≦n≦100 and 0≦x≦n+4.
2. Description of the Prior Art
The Ion Implantation Process
The fabrication of semiconductor devices involves, in part, the introduction of impurities into the semiconductor substrate to form doped regions. The impurity elements are selected to bond appropriately with the semiconductor material so as to create electrical carriers, thus altering the electrical conductivity of the semiconductor material. The electrical carriers can either be electrons (generated by N-type dopants) or holes (generated by P-type dopants). The concentration of dopant impurities so introduced determines the electrical conductivity of the resultant region. Many such N- and P-type impurity regions must be created to form transistor structures, isolation structures and other such electronic structures, which function collectively as a semiconductor device.
The conventional method of introducing dopants into a semiconductor substrate is by ion implantation. In ion implantation, a feed material containing the desired element is introduced into an ion source and energy is introduced to ionize the feed material, creating ions which contain the dopant element (for example, in silicon the elements 75As, 31P, and 121Sb are donors or N-type dopants, while 11B and 115In are acceptors or P-type dopants). An accelerating electric field is provided to extract and accelerate the typically positively-charged ions, thus creating an ion beam (in certain cases, negatively-charged ions may be used instead). Then, mass analysis is used to select the species to be implanted, as is known in the art, and the mass-analyzed ion beam may subsequently pass through ion optics which alter its final velocity or change its spatial distribution prior to being directed into a semiconductor substrate or workpiece. The accelerated ions possess a well-defined kinetic energy which allows the ions to penetrate the target to a well-defined, predetermined depth at each energy value. Both the energy and mass of the ions determine their depth of penetration into the target, with higher energy and/or lower mass ions allowing deeper penetration into the target due to their greater velocity. The ion implantation system is constructed to carefully control the critical variables in the implantation process, such as the ion energy, ion mass, ion beam current (electrical charge per unit time), and ion dose at the target (total number of ions per unit area that penetrate into the target). Further, beam angular divergence (the variation in the angles at which the ions strike the substrate) and beam spatial uniformity and extent must also be controlled in order to preserve semiconductor device yields.
A key process of semiconductor manufacturing is the creation of P-N junctions within the semiconductor substrate. This requires the formation of adjacent regions of P-type and N-type doping. An important example of the formation of such a junction is the implantation of P-type dopant into a semiconductor region already containing a uniform distribution of N-type dopant. In this case, an important parameter is the junction depth, which is defined as the depth from the semiconductor surface at which the P-type and N-type dopants have equal concentrations. This junction depth is a function of the implanted dopant mass, energy and dose.
An important aspect of modern semiconductor technology is the continuous evolution to smaller and faster devices. This process is called scaling. Scaling is driven by continuous advances in lithographic process methods, allowing the definition of smaller and smaller features in the semiconductor substrate which contains the integrated circuits. A generally accepted scaling theory has been developed to guide chip manufacturers in the appropriate resize of all aspects of the semiconductor device design at the same time, i.e., at each technology or scaling node. The greatest impact of scaling on ion implantation process is the scaling of junction depths, which requires increasingly shallow junctions as the device dimensions are decreased. This requirement for increasingly shallow junctions as integrated circuit technology scales translates into the following requirement: ion implantation energies must be reduced with each scaling step. The extremely shallow junctions called for by modern, sub-0.13 micron devices are termed "Ultra-Shallow Junctions", or USJ.
Physical Limitations on Low-Energy Beam Transport
Due to the aggressive scaling of junction depths in CMOS processing, the ion energy required for many critical implants has decreased to the point that conventional ion implantation systems, originally developed to generate much higher energy beams, deliver much reduced ion currents to the wafer, reducing wafer throughput. The limitations of conventional ion implantation systems at low beam energy are most evident in the extraction of ions from the ion source, and their subsequent transport through the implanter's beam line. Ion extraction is governed by the Child-Langmuir relation, which states that the extracted beam current density is proportional to the extraction voltage (i.e., beam energy at extraction) raised to the 3/2 power.
Molecular Ion Implantation
One way to overcome the limitations imposed by the Child-Langmuir relation discussed above is to increase the transport energy of the dopant ion by ionizing a molecule containing the dopant of interest, rather than a single dopant atom. In this way, while the kinetic energy of the molecule is higher during transport, upon entering the substrate, the molecule breaks up into its constituent atoms, sharing the energy of the molecule among the individual atoms according to their distribution in mass, so that the dopant atom's implantation energy is much lower than the original transport kinetic energy of the molecular ion. Consider the dopant atom "X" bound to a radical "Y" (disregarding for purposes of discussion the issue of whether "Y" affects the device-forming process). If the ion XY+ were implanted in lieu of X+, then XY+ must be extracted and transported at a higher energy, increased by a factor equal to the mass of XY divided by the mass of X; this ensures that the velocity of X in either case is the same. Since the space-charge effects described by the Child-Langmuir relation discussed above are super-linear with respect to ion energy, the maximum transportable ion current is increased. Historically, the use of polyatomic molecules to ameliorate the problems of low energy implantation is well known in the art. A common example has been the use of the BF2 + molecular ion for the implantation of low-energy boron, in lieu of B+. This process dissociates BF3 feed gas to the BF2 + ion for implantation. In this way, the ion mass is increased to 49 AMU, allowing an increase of the extraction and transport energy by more than a factor of 4 (i.e., 49/11) over using single boron atoms. Upon implantation, however, the boron energy is reduced by the same factor of (49/11). It is worthy of note that this approach does not reduce the current density in the beam, since there is only one boron atom per unit charge in the beam. In addition, this process also implants fluorine atoms into the semiconductor substrate along with the boron, an undesirable feature of this technique since fluorine has been known to exhibit adverse effects on the semiconductor device.
Cluster Implantation
In principle, a more effective way to increase dose rate than by the XY+ model discussed above is to implant clusters of dopant atoms, that is, molecular ions of the form XnYm +, where n and m are integers and n is greater than one. Recently, there has been seminal work using decaborane as a feed material for ion implantation. The implanted particle was a positive ion of the decaborane molecule, B10H14, which contains 10 boron atoms, and is therefore a "cluster" of boron atoms. This technique not only increases the mass of the ion and hence the transport ion energy, but for a given ion current, it substantially increases the implanted dose rate, since the decaborane ion B10Hx + has ten boron atoms. Importantly, by significantly reducing the electrical current carried in the ion beam (by a factor of 10 in the case of decaborane ions) not only are beam space-charge effects reduced, increasing beam transmission, but wafer charging effects are reduced as well. Since positive ion bombardment is known to reduce device yields by charging the wafer, particularly damaging sensitive gate isolation, such a reduction in electrical current through the use of cluster ion beams is very attractive for USJ device manufacturing, which must increasingly accommodate thinner gate oxides and exceedingly low gate threshold voltages. Thus, there is a critical need to solve two distinct problems facing the semiconductor manufacturing industry today: wafer charging, and low productivity in low-energy ion implantation. As we will show later in this document, the present invention proposes to further increase the benefits of cluster implantation by using significantly larger boron hydride clusters having n>10. In particular, we have implanted the B18Hx + ion, and further propose to implant the B36Hx + ion, using the solid feed material octadecaborane, or B18H22. We will present first results showing that this technology is a significant advance over previous efforts in boron cluster implantation.
Ion Implantation Systems
Ion implanters have historically been segmented into three basic categories: high current, medium current, and high energy implanters. Cluster beams are useful for high current and medium current implantation processes. In particular, today's high current implanters are primarily used to form the low energy, high dose regions of the transistor such as drain structures and doping of the polysilicon gates. They are typically batch implanters, i.e., processing many wafers mounted on a spinning disk, the ion beam remaining stationary. High current transport systems tend to be simpler than medium current transport systems, and incorporate a large acceptance of the ion beam. At low energies and high currents, prior art implanters produce a beam at the substrate which tends to be large, with a large angular divergence (e.g., a half-angle of up to seven degrees). In contrast, medium current implanters typically incorporate a serial (one wafer at a time) process chamber, which offers a high tilt capability (e.g., up to 60 degrees from the substrate normal). The ion beam is typically electromagnetically or electrodynamically scanned across the wafer at a high frequency, up to about 2 kiloHertz in one dimension (e.g., laterally) and mechanically scanned at a low frequency of less than 1 Hertz in an orthogonal direction (e.g., vertically), to obtain a real coverage and provide dose uniformity over the substrate. Process requirements for medium current implants are more complex than those for high current implants. In order to meet typical commercial implant dose uniformity and repeatability requirements of a variance of only a few percent, the ion beam must possess excellent angular and spatial uniformity (angular uniformity of beam on wafer of ≦1 deg, for example). Because of these requirements, medium current beam lines are engineered to give superior beam control at the expense of reduced acceptance. That is, the transmission efficiency of the ions through the implanter is limited by the emittance of the ion beam. Presently, the generation of higher current (about 1 mA) ion beams at low (<10 keV) energy is problematic in serial implanters, such that wafer throughput is unacceptably low for certain lower energy implants (for example, in the creation of source and drain structures in leading edge CMOS processes). Similar transport problems also exist for batch implanters (processing many wafers mounted on a spinning disk) at the low beam energies of <5 keV per ion.
While it is possible to design beam transport optics which are nearly aberration-free, the ion beam characteristics (spatial extent, spatial uniformity, angular divergence and angular uniformity) are nonetheless largely determined by the emittance properties of the ion source itself (i.e., the beam properties at ion extraction which determine the extent to which the implanter optics can focus and control the beam as emitted from the ion source). The use of cluster beams instead of monomer beams can significantly enhance the emittance of an ion beam by raising the beam transport energy and reducing the electrical current carried by the beam. However, prior art ion sources for ion implantation are not effective at producing or preserving ionized clusters of the required N- and P-type dopants. Thus, there is a need for cluster ion and cluster ion source technology in order to provide a better-focused, more collimated and more tightly controlled ion beam on target, and in addition to provide higher effective dose rates and higher throughputs in semiconductor manufacturing.
An alternative approach to beam line ion implantation for the doping of semiconductors is so-called "plasma immersion". This technique is known by several other names in the semiconductor industry, such as PLAD (PLAsma Doping), PPLAD (Pulsed PLAsma Doping, and PI3 (Plasma Immersion Ion Implantation). Doping using these techniques requires striking a plasma in a large vacuum vessel that has been evacuated and then backfilled with a gas containing the dopant of choice such as boron trifluoride, diborane, arsine, or phosphine. The plasma by definition has positive ions, negative ions and electrons in it. The target is then biased negatively thus causing the positive ions in the plasma to be accelerated toward the target. The energy of the ions is described by the equation U=QV, where U is the kinetic energy of the ions, Q is the charge on the ion, and V is the bias on the wafer. With this technique there is no mass analysis. All positive ions in the plasma are accelerated and implanted into the wafer. Therefore extremely clean plasma must be generated. With this technique of doping a plasma of diborane, phosphine or arsine gas is formed, followed by the application of a negative bias on the wafer. The bias can be constant in time, time-varying, or pulsed. Dose can be parametrically controlled by knowing the relationship between pressure of the vapor in the vessel, the temperature, the magnitude of the biasing and the duty cycle of the bias voltage and the ion arrival rate on the target. It is also possible to directly measure the current on the target. While Plasma Doping is considered a new technology in development, it is attractive since it has the potential to reduce the per wafer cost of performing low energy, high dose implants, particularly for large format (e.g., 300 mm) wafers. In general, the wafer throughput of such a system is limited by wafer handling time, which includes evacuating the process chamber and purging and re-introducing the process gas each time a wafer or wafer batch is loader into the process chamber. This requirement has reduced the throughput of Plasma Doping systems to about 100 wafers per hour (WPH), well below the maximum mechanical handling capability of beamline ion implantation systems, which can process over 200 WPH.
Negative Ion Implantation
It has recently been recognized (see, for example, Junzo Ishikawa et al. "Negative-Ion Implantation Technique", Nuclear Instruments and Methods in Physics Research B 96 (1995) 7-12.) that implanting negative ions offers advantages over implanting positive ions. One very important advantage of negative ion implantation is to reduce the ion implantation-induced surface charging of VLSI devices in CMOS manufacturing. In general, the implantation of high currents (on the order of 1 mA or greater) of positive ions creates a positive potential on the gate oxides and other components of the semiconductor device which can easily exceed gate oxide damage thresholds. When a positive ion impacts the surface of a semiconductor device, it not only deposits a net positive charge, but liberates secondary electrons at the same time, multiplying the charging effect. Thus, equipment vendors of ion implantation systems have developed sophisticated charge control devices, so-called electron flood guns, to introduce low-energy electrons into the positively-charged ion beam and onto the surface of the device wafers during the implantation process. Such electron flood systems introduce additional variables into the manufacturing process, and cannot completely eliminate yield losses due to surface charging. As semiconductor devices become smaller and smaller, transistor operating voltages and gate oxide thicknesses become smaller as well, reducing the damage thresholds in semiconductor device manufacturing, further reducing yield. Hence, negative ion implantation potentially offers a substantial improvement in yield over conventional positive ion implantation for many leading-edge processes. Unfortunately, this technology is not yet commercially available, and indeed negative ion implantation has not to the author's knowledge been used to fabricate integrated circuits, even in research and development.
An object of this invention is to provide a method of manufacturing a semiconductor device, this method being capable of forming ultra-shallow impurity-doped regions of P-type (i.e., acceptor) conductivity in a semiconductor substrate, and furthermore to do so with high productivity.
Another object of this invention is to provide a method of manufacturing a semiconductor device, this method being capable of forming ultra-shallow impurity-doped regions of P-type (i.e., acceptor) conductivity in a semiconductor substrate using ionized clusters of the form BnHx + and BnHx − where 10<n<100 and 0≦x≦n+4.
A further object of this invention is to provide a method of manufacturing a semiconductor device by implanting ionized molecules of octadecaborane, B18H22, of the form B18Hx + or B18Hx −, where x is an integer less than or equal to 22.
A still further object of this invention is to provide for an ion implantation system for manufacturing semiconductor devices, which has been designed to form ultra shallow impurity-doped regions of either N or P conductivity type in a semiconductor substrate through the use of cluster ions.
According to one aspect of this invention, there is provided a method of implanting cluster ions comprising the steps of: providing a supply of molecules which each contain a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate.
An object of this invention is to provide a method that allows the semiconductor device manufacturer to ameliorate the difficulties in extracting low energy ion beams by implanting a cluster of n dopant atoms (n=18 in the case of B18Hx +) rather than implanting a single atom at a time. The cluster ion implant approach provides the equivalent of a much lower energy monatomic implant since each atom of the cluster is implanted with an energy of approximately E/n. Thus, the implanter is operated at an extraction voltage approximately n times higher than the required implant energy, which enables higher ion beam current, particularly at the low implantation energies required by USJ formation. In addition, each milliamp of cluster current provides the equivalent of 18 mA of monomer boron. Considering the ion extraction stage, the relative improvement in transport efficiency enabled by cluster ion implant can be quantified by evaluating the Child-Langmuir limit. It is recognized that this limit can be approximated by:
J max=1.72(Q/A)1/2 V 3/2 d −2, (1)
where Jmax is in mA/cm2, Q is the ion charge state, A is the ion mass in AMU, V is the extraction voltage in kV, and d is the gap width in cm.
Δ=n(U n /U 1)3/2(m n /m 1)−1/2. (2)
Here, Δ is the relative improvement in dose rate (atoms/sec) achieved by implanting a cluster with n atoms of the dopant of interest at an energy Un relative to the single atom implant of an atom of mass m1 at energy U1, where Ui=eV. In the case where Un is adjusted to give the same dopant implantation depth as the monatomic (n=1) case, equation (2) reduces to:
Δ=n 2. (3)
Thus, the implantation of a cluster of n dopant atoms has the potential to provide a dose rate n2 higher than the conventional implant of single atoms. In the case of B18Hx, this maximum dose rate improvement is more than 300. The use of cluster ions for ion implant clearly addresses the transport of low energy (particularly sub-keV) ion beams. It is to be noted that the cluster ion implant process only requires one electrical charge per cluster, rather than having every dopant atom carrying one electrical charge, as in the conventional case. The transport efficiency (beam transmission) is thus improved, since the dispersive Coulomb forces are reduced with a reduction in charge density. Importantly, this feature enables reduced wafer charging, since for a given dose rate, the electrical beam current incident on the wafer is dramatically reduced. Also, since the present invention produces copious amounts of negative ions of boron hydrides, such as B18Hx −, it enables the commercialization of negative ion implantation at high dose rates. Since negative ion implantation produces less wafer charging than positive ion implantation, and since these electrical currents are also much reduced through the use of clusters, yield loss due to wafer charging can be further reduced. Thus, implanting with clusters of n dopant atoms rather than with single atoms ameliorates basic transport problems in low energy ion implantation and enables a dramatically more productive process.
Enablement of this method requires the formation of the cluster ions. The prior art ion sources used in commercial ion implanters produce only a small fraction of primarily lower-order (e.g., n=2) clusters relative to their production of monomers, and hence these implanters cannot effectively realize the low energy cluster beam implantation advantages listed above. Indeed, the intense plasmas provided by many conventional ion sources rather dissociate molecules and clusters into their component elements. The novel ion source described herein produces cluster ions in abundance due to its use of a "soft" ionization process, namely electron-impact ionization. The ion source of the present invention is designed expressly for the purpose of producing and preserving dopant cluster ions. Instead of striking an arc discharge plasma to create ions, the ion source of the present invention uses electron-impact ionization of the process gas by electrons injected in the form of one or more focused electron beams.
These and other advantages of the present invention will be readily understood with reference to the following specification and attached drawing wherein:
A schematic diagram of the accel-decel electrode is shown in
The ion beam 200 (
R=(2mU)1/2 /qB, (4)
where R is the bending radius, B is the magnetic flux density, m is the ion mass, U is the ion kinetic energy and q is the ion charge state.
The selected ion beam is comprised of ions of a narrow range of mass-energy product only, such that the bending radius of the ion beam by the magnet sends that beam through mass resolving aperture 270. The components of the beam that are not selected do not pass through the mass-resolving aperture 270, but are intercepted elsewhere. For beams with smaller mass-to-charge ratios m/q 250 than the selected beam 240, for example comprised of hydrogen ions having a mass of 1 or 2 AMU, the magnetic field induces a smaller bending radius and the beam intercepts the inner radius wall 300 of the magnet vacuum chamber, or elsewhere upstream of the mass resolving aperture. For beams with larger mass-to-charge ratios 260 than the selected beam 240, the magnetic field induces a larger bending radius, and the beam strikes the outer radius wall 290 of the magnet chamber, or elsewhere upstream of the mass resolving aperture. As is well established in the art, the combination of analyzer magnet 230 and mass resolving aperture 270 form a mass analysis system which selects the ion beam 240 from the multi-species beam 200 extracted from the ion source 10. The selected beam 240 then passes through a post-analysis acceleration/deceleration electrode 310. This stage 310 can adjust the beam energy to the desired final energy value required for the specific implantation process. For example, in low-energy, high-dose process higher currents can be obtained if the ion beam is formed and transported at a higher energy and then decelerated to the desired, lower implant ion energy prior to reaching the wafer. The post-analysis acceleration/deceleration lens 310 is an electrostatic lens similar in construction to decel electrode 220. To produce low-energy positive ion beams, the front portion of the implanter is enclosed by terminal enclosure 208 and floated below earth ground. A grounded Faraday cage 205 surrounds the enclosure 208 for safety reasons. Thus, the ion beam can be transported and mass-analyzed at higher energies, and decelerated prior to reaching the workpiece. Since decel electrode 300 is a strong-focusing optic, dual quadrupoles 320 refocus ion beam 240 to reduce angular divergence and spatial extent. In order to prevent ions which have undergone charge-exchange or neutralization reactions between the resolving aperture and the substrate 312 (and therefore do not possess the correct energy) from propagating to substrate 312, a neutral beam filter 310 a (or "energy filter") is incorporated within this beam path. For example, the neutral beam filter 310 a shown incorporates a "dogleg" or small-angle deflection in the beam path which the selected ion beam 240 is constrained to follow through an applied DC electromagnetic field; beam components which have become electrically neutral or multiply-charged, however, would necessarily not follow this path. Thus, only the ion of interest and with the correct ion energy is passed downstream of the exit aperture 314 of the filter 310 a.
Once the beam is shaped by a quadrupole pair 320 and filtered by a neutral beam filter 310 a, the ion beam 240 enters the wafer process chamber 330, also held in a high vacuum environment, where it strikes the substrate 312 which is mounted on a spinning disk 315. Various materials for the substrate are suitable with the present invention, such as silicon, silicon-on-insulator strained superlattice substrate and a silicon germanium (SiGe) strained superlattice substrate. Many substrates may be mounted on the disk so that many substrates may be implanted simultaneously, i.e., in batch mode. In a batch system, spinning of the disk provides mechanical scanning in the radial direction, and either vertical or horizontal scanning of the spinning disk is also effected at the same time, the ion beam remaining stationary.
Alternative embodiments of high-current implanters are illustrated in
The use of cluster ion beams such as B18Hx + or As4Hx + allow the beam extraction and transmission to take place at higher energies than would be the case for monomers such as B+ or As+. Upon striking the target, the ion energy is partitioned by mass ratio of the individual, constituent atoms. For B18H22 the effective boron energy is 10.8/216.4 of the beam energy, because an average boron atom has a mass of 10.8 amu and the molecule has an average mass of 216.4 amu. This allows the beam to be extracted and transported at 20 times the implant energy. Additionally the dose rate is 18 times higher than for a monomer ion. This results in higher throughput and less charging of the wafer. Wafer charging is reduced because there is only one charge for 18 atoms implanted into the wafer instead of one charge for every atom implanted with a monomer beam.
Plasma Doping with Clusters
An alternative approach to beam line ion implantation for the doping of semiconductors is so-called "plasma immersion". This technique is known by several other names in the semiconductor industry, such as PLAD (PLAsma Doping), PPLAD (Pulsed PLAsma Doping, and PI3 (Plasma Immersion Ion Implantation). Doping using these techniques requires striking a plasma in a large vacuum vessel that has been evacuated and then backfilled with a gas containing the dopant of choice such as boron trifluoride, diborane, arsine, or phosphine. The plasma by definition has positive ions, negative ions and electrons in it. The target is then biased negatively thus causing the positive ions in the plasma to be accelerated toward the target. The energy of the ions is described by the equation U=QV, where U is the kinetic energy of the ions, Q is the charge on the ion, and V is the bias on the wafer. With this technique there is no mass analysis. All positive ions in the plasma are accelerated and implanted into the wafer. Therefore extremely clean plasma must be generated. With this technique of doping a vapor of boron clusters such as B18H22, or arsenic clusters such as As4Hx can be introduced into the vessel and a plasma ignited, followed by the application of a negative bias on the wafer. The bias can be constant in time, time-varying, or pulsed. The use of these clusters will be beneficial since the ratio of dopant atoms to hydrogen (e.g., using B18H22 versus B2H6 and As4Hx versus AsH3) is greater for hydride clusters than for simple hydrides, and also the dose rates can be much higher when using clusters. Dose can be parametrically controlled by knowing the relationship between pressure of the vapor in the vessel, the temperature, the magnitude of the biasing and the duty cycle of the bias voltage and the ion arrival rate on the target. It is also possible to directly measure the current on the target. As with beam line implantation, using octadecaborane would yield an 18 times enhancement in dose rate and 20 times higher accelerating voltages required if octadecaborane were the vapor of choice. If As4Hx were used there would be a four times dose rate enhancement and a four times the voltage required. There would also be reduced changing as with the beam line implants utilizing clusters.
Cluster Ion Source
Referring now to
Single Electron Source
In particular,
Voltages are all relative to the ionization chamber 44. For example, if Vc=−0.5 kV and Va=1.5 kV, the energy of the electron beam is therefore given by e(Va−Vc), where e is the electronic charge (6.02�10−19 Coulombs). Thus, in this example, the electron beam 70 is formed and deflected at an energy of 2 keV, but upon entering electron entrance aperture 70 a, it has an energy of only 0.5 keV.
Other elements shown in
Magnetic flux from permanent magnet 130 and magnetic pole assembly 125 is used to steer the beam by establishing a uniform magnetic field across the air gap between the ends of the magnetic pole assembly 125, wherein the electron beam 70 propagates. The magnetic field B 135 and the electron beam energies of electron beam 70 are matched such that electron beam 70 is deflected through approximately 90 degrees, and passes into ionization chamber 44 as shown. By deflecting electron beam 70 for example, through 90 degrees, no line of sight exists between emitter 110 and ionization chamber 44 which contains the ions, thus preventing bombardment of the emitters by energetic charged particles.
Since Va is positive relative to the ionization chamber 44, electron beam 70 is decelerated as it passes through the gap defined by base plate aperture 106 and electron entrance aperture 70 a. Thus, the combination of base plate aperture 106 and electron entrance aperture 70 a and the gap between them, forms an electrostatic lens, in this case, a decelerating lens. The use of a decelerating lens allows the ionization energy of the electron beam to be adjusted without substantially affecting the electron beam generation and deflection.
The gap may be established by one or more ceramic spacers 132, which support base plate 105 and act as a stand off from source block 35, which is at ionization chamber potential. The ceramic spacers 132 provide both electrical isolation and mechanical support. Note that for clarity, the emitter shields 102 and the source shield 101 are not shown in
Since the electron entrance aperture 106 can limit transmission of electron beam 70, base plate 105 can intercept a significant portion of the energetic electron beam 70. base plate 105 must therefore be either actively cooled, or passively cooled. Active cooling may be accomplished by passing liquid coolant, such as water, through base plate 105, or forcing compressed air to flow through said base plate 105. In an alternative embodiment, passive cooling is accomplished by allowing base plate 105 to reach a temperature whereby they cool through radiation to their surroundings. This steady-state temperature depends on the intercepted beam power, the surface area and emissivity of the base plate, and the temperatures of surrounding components. Allowing the base plate 105 to operate at elevated temperature, for example at 250 C, is advantageous when running condensable gases which can form contaminating and particle-forming films on exposed cold surfaces.
Dual Electron Source
Similar to the embodiment for a single electron source, the voltages for a dual electron source are also all relative to the ionization chamber 44. For example, if Ve=−0.5 kV and Va=1.5 kV, the energy of the electron beam is therefore given by e(Va−Ve), where e is the electronic charge (6.02�10−19 Coulombs). Thus, in this example, the electron beam 70 a, 70 b is formed and deflected at an energy of 2 keV, but upon entering electron entrance aperture 71 a, 71 b it has an energy of only 0.5 keV.
The following table gives approximate values of magnetic field B required to bend an electron beam with energy E through 90 degrees.
Dependence of Magnetic Field Strength on Electron Energy to Accomplish
a 90 Degree Deflection in the Present Invention
Electron Energy E
Magnetic Field B
1500 eV
2000 eV
2500 eV
Other elements shown in
Magnetic flux from a pair of permanent magnets 130 a and 130 b and a pair of magnetic pole assemblies 125 a and 125 b is used to form beam steerers used to establish uniform magnetic fields across the air gap between the ends of the magnetic pole assemblies 125 a, 125 b, wherein the electron beam 70 a, 70 b propagates. The magnetic fields 135 a and 135 b and the electron beam energies of electron beams 70 a and 70 b are matched such that electron beams 70 a and 70 b are deflected 90 degrees, and pass into the ionization chamber 44 as shown. By deflecting the electron beams 70 a and 70 b, for example, through 90 degrees, no line of sight exists between the emitters and the ionization chamber 44 which contains the ions, thus preventing bombardment of the emitters by energetic charged particles.
Since Va is positive relative to ionization chamber 44, the electron beams 70A, 70B are decelerated as they pass through the gap defined by base plate apertures 106 a and 106 b and the electron entrance apertures 71 a and 71 b. Thus, the combination of base plate aperture 106 a and electron entrance aperture 71 a, and baseplate aperture 106 b and electron entrance aperture 71 b, and the gaps between them, each forms an electrostatic lens, in this case, a decelerating lens. The use of the decelerating lens allows the ionization energy of the electron beam to be adjusted without substantially affecting the electron beam generation and deflection.
The gap may be established by one or more ceramic spacers 132 a and 132 b, which support each base plate 105 a and 105 b and act as a stand off from the source block 35, which is at ionization chamber potential. The ceramic spacers 132 a and 132 b provide both electrical isolation and mechanical support. Note that for clarity, emitter shields 102 and the source shield 101 are not shown in
Since the electron entrance apertures 106 a and 106 b can limit transmission of the electron beams, the baseplates 105 a and 105 b can intercept a portion of the energetic electron beams 70 a, 70 b. The baseplates 105 a, 105 b must therefore be either actively cooled, or passively cooled. Active cooling may be accomplished by passing liquid coolant, such as water, through the baseplates. Alternatively, passive cooling may be accomplished by allowing the baseplates to reach a temperature whereby they cool through radiation to their surroundings. This steady-state temperature depends on the intercepted beam power, the surface area and emissivity of the baseplates, and the temperatures of surrounding components. Allowing the baseplates 105 a, 105 b to operate at elevated temperature, for example at 200 C, may be advantageous when running condensable gases which can form contaminating and particle-forming films on cold surfaces.
Ionization Probability
Temperature Control
One aspect of the ion source of the present invention is user control of the ionization chamber temperature, as well as the temperature of the source block and valves. This feature is advantageous when vaporizing condensable gases, preventing significant coating of surfaces with condensed material, and ensuring efficient transport of the vapor through conduit 39, valves 100, 110, and vapor feed 32. The source utilizes a combination of heating and cooling to achieve accurate control of the source temperature. Separate temperature control is provided for vaporizer 28, shutoff valves 100 and 110, and source block 35. Ionization chamber 44 is passively heated, as is extraction aperture plate 80, by interactions with electron beam 70, and maintains stable operating temperature though thermally conductive interfaces between source block 35 and ionization chamber 44, and between ionization chamber 44 and extraction aperture plate 80, such that source block temp<ionization chamber temp<extraction aperture temp. External electronic controllers (such as an Omron model E5CK) are used for temperature control. Heating is provided by embedded resistive heaters, whose heating current is controlled by the electronic controller. Cooling is provided by a combination of convective and conductive gas cooling methods, as further described, for example, in commonly owned PCT application US01/18822, and in U.S. application Ser. No. 10/183,768, both herein incorporated by reference.
Magnetic Yoke Assembly
In one embodiment, a uniform magnetic field B′ 119 is established within ionization chamber 44 by the incorporation of a permanent magnetic yoke assembly 500, shown in
A different embodiment of a magnetic yoke assembly is shown in
By incorporating the magnetic yoke assembly of
Method for Generating Boron Hydride Cluster Ions
The method herein described can be considered normal operation of the ion source of the present invention where the only difference from other operational modes is the user's choice of values for the source parameters (feed material, feed gas flow rate, electron ionization energy and current, and source component temperature(s)). Solid octadecaborane, B18H22 may be used, to produce boron hydride cluster ions of the form B18Hx +, by using the vaporizer and ion source depicted in
In order to characterize the implantation profile of B18Hx + for boron doping of semiconductors, a commercial silicon wafer was dipped in HF solution to remove any native oxide, and implanted in a cluster ion implantation system similar to that disclosed in
Formation of N- and P-Type Shallow Junctions
An important application of this method is the use of cluster ion implantation for the formation of N- and P-type shallow junctions as part of a CMOS fabrication sequence. CMOS is the dominant digital integrated circuit technology in current use and its name denotes the formation of both N-channel and P-channel MOS transistors (Complementary MOS: both N and P) on the same chip. The success of CMOS is that circuit designers can make use of the complementary nature of the opposite transistors to create a better circuit, specifically one that draws less active power than alternative technologies. It is noted that the N and P terminology is based on Negative and Positive (N-type semiconductor has negative majority carriers, and vice versa), and the N-channel and P-channel transistors are duplicates of each other with the type (polarity) of each region reversed. The fabrication of both types of transistors on the same substrate requires sequentially implanting an N-type impurity and then a P-type impurity, while protecting the other type of devices with a shielding layer of photoresist. It is noted that each transistor type requires regions of both polarities to operate correctly, but the implants which form the shallow junctions are of the same type as the transistor: N-type shallow implants into N-channel transistors and P-type shallow implants into P-channel transistors. An example of this process is shown in
An example of the application of this method is shown in
The P-well 43 forms a junction with the N-type substrate 41 that provides junction isolation for the transistors in the well 43. The trench isolation 42 provides lateral dielectric isolation between the N- and P-wells (i.e., in the overall CMOS structure). The gate stack is constructed, with a gate oxide layer 44 and a polysilicon gate electrode 45, patterned to form a transistor gate stack. A photoresist 46 is applied and patterned such that the area for NMOS transistors is exposed, but other areas of the substrate 41 are shielded. After the photoresist 46 is applied, the substrate 41 is ready for the drain extension implant, which is the shallowest doping layer required by the device fabrication process. A typical process requirement for leading-edge devices of the 0.13 μm technology node is an arsenic implant energy of between 1 keV and 2 keV, and an arsenic dose of 5�1014 cm−2. The cluster ion beam 47, As4Hx + in this case, is directed at the semiconductor substrate, typically such that the direction of propagation of the ion beam is normal to the substrate, to avoid shadowing by the gate stack. The energy of the As4Hx + cluster should be four times the desired As+ implant energy, e.g., between 4 keV and 8 keV. The clusters dissociate upon impact with the substrate, and the dopant atoms come to rest in a shallow layer near the surface of the semiconductor substrate, which forms the drain extension region 48. We note that the same implant enters the surface layer of the gate electrode 49, providing additional doping for the gate electrode. The process described in
A further example of the application of this method is shown in
After etching the spacers 52, a photoresist layer 53 is applied and patterned to expose the transistor to be implanted, an NMOS transistor in this example. Next, the ion implant to form the source and drain regions 55 is performed. Since this implant requires a high dose at low energy, it is an appropriate application of the proposed cluster implantation method. Typical implant parameters for the 0.13 um technology node are approximately 6 keV per arsenic atom (54) at an arsenic dose of 5�1015 cm−2, so it requires a 24 keV, 1.25�1015 cm−2 As4Hx + implant, a 12 keV, 2.5�1015 cm−2 As2Hx + implant, or a 6 keV, 5�1015 cm−2 As+ implant. As shown in
The detailed diagrams showing the formation of the PMOS drain extension 148 and PMOS source and drain regions 155 are shown in
In general, ion implantation alone is not sufficient for the formation of an effective semiconductor junction: a heat treatment is necessary to electrically activate the implanted dopants. After implantation, the semiconductor substrate's crystal structure is heavily damaged (substrate atoms are moved out of crystal lattice positions), and the implanted dopants are only weakly bound to the substrate atoms, so that the implanted layer has poor electrical properties. A heat treatment, or anneal, at high temperature (greater than 900 C) is typically performed to repair the semiconductor crystal structure, and to position the dopant atoms substitutionally, i.e., in the position of one of the substrate atoms in the crystal structure. This substitution allows the dopant to bond with the substrate atoms and become electrically active; that is, to change the conductivity of the semiconductor layer. This heat treatment works against the formation of shallow junctions, however, because diffusion of the implanted dopant occurs during the heat treatment. Boron diffusion during heat treatment, in fact, is the limiting factor in achieving USJ's in the sub-0.1 micron regime. Advanced processes have been developed for this heat treatment to minimize the diffusion of the shallow implanted dopants, such as the "spike anneal". The spike anneal is a rapid thermal process wherein the residence time at the highest temperature approaches zero: the temperature ramps up and down as fast as possible. In this way, the high temperatures necessary to activate the implanted dopant are reached while the diffusion of the implanted dopants is minimized. It is anticipated that such advanced heat treatments would be utilized in conjunction with the present invention to maximize its benefits in the fabrication of the completed semiconductor device.
Obviously, many modifications and variations of the present invention are possible in light of the above teachings. Thus, it is to be understood that, within the scope of the appended claims, the invention may be practiced otherwise than as specifically described above.
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|U.S. Classification
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Owner name: SEMEQUIP, INC., MASSACHUSETTS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HORSKY, THOMAS N.;REEL/FRAME:022001/0675
Effective date: 20081216
|Nov 2, 2011
Owner name: SEMEQUIP, INC., ILLINOIS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HORSKY, THOMAS N.;JACOBSON, DALE C.;SIGNING DATES FROM 20081215 TO 20081216;REEL/FRAME:027162/0261
|Jul 17, 2015
|Maintenance fee reminder mailed
|Dec 6, 2015
|Lapse for failure to pay maintenance fees
|Jan 26, 2016
|Expired due to failure to pay maintenance fee
Effective date: 20151206


text:
BSN True Mass 1200 (15 Servings)
BSN True Mass 1200 (15 Servings)
For the true hard-gainer in need of serious caloric support, BSN developed its first super gainer with the introduction of True-Mass 1200.
True-Mass 1200 is an ultra-premium super mass gainer designed for individuals with high caloric requirements or those who have difficulty adding and maintaining mass. BSN's signature protein formula is paired with a unique complex carbohydrate blend that includes ground whole oats for a convenient source of high-calorie nutrition. and True-Mass 1200 distinguishes itself with a delicious milkshake-like taste that makes getting those extra calories in a pleasure rather than a chore. For the true hard-gainer or anyone in need of serious caloric support, True-Mass 1200 is the ultimate mass-gaining option.
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Serving Information
- Strawberry Milkshake:
- Container Size: 4.73 kg
- Serving Size: 2 Scoops (315 g)
- Servings Per Container: 15
- Vanilla Ice Cream:
- Container Size: 4.73 kg
- Serving Size: 2 Scoops (315 g)
- Servings Per Container: 15
- Chocolate Milkshake:
- Container Size: 4.80 kg
- Serving Size: 2 Scoops (320 g)
- Servings Per Container: 15
Nutritional Information Per Serving
- Energy: 1230 kcal
- from Fat: 140 kcal
- Total Fat: 16 g
- of which Saturated: 5 g
- of which Trans: 0 g
- Cholesterol: 150 mg
- Sodium: 530 mg
- Total Carbohydrate: 222 g
- of which Dietary Fiber: 16 g
- of which Sugars: 16 g
- Protein: 50 g
- Complex Carbohydrate Blend (Maltodextrin, Whole Oat Flour), Protein Blend (Whey Protein Concentrate, Calcium Caseinate, Milk Protein Isolate, Whey Protein Isolate, Micellar Casein, Egg Albumin, Hydrolyzed Whey Protein, Glutamine Peptides), Creamer (Sunflower Oil, Corn Syrup Solids, Sodium Caseinate, Mono & Diglycerides, Dipotassium Phosphate, Tricalcium Phosphate, Soy Lecithin, Tocopherols), Cocoa (Processed with Alkali), Natural and Artificial Flavors, Polydextrose, Lecithin, Gum Blend (Cellulose Gum, Xanthan Gum, Guar Gum, Gum Arabic), MCT Powder (Medium Chain Triglycerides, Non-Fat Dry Milk, Disodium Phosphate, and Silicon Dioxide), Vanillin, Acesulfame Potassium, Sucralose
Recommended Use
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High Quality Product
Review posted on 02 Mar 2017
I have been working out for 6 years and due to my high metabolism and busy schedule I've struggled with gaining strength and weight. I've brought this product as a replacement for mutant mass as it didn't agree with my stomach. I've been using it now for over 3 months and I have been slowly gaining weight and strength. The serving size is stupidly big (I only take half the serving mix with creating in a sports blender). The sources of protein and carbs are of high quality. Summary: Ideal for people on the go who's struggling to put on mass.
Review posted on 16 May 2016
Brilliant taste, I mix mine in a blender as when shaken there will be lumps! Feel more energized in the morning and muscles less sore
Review posted on 27 Jan 2016
Recomend 100%
Amazing product
Review posted on 17 Jul 2015
In general I rate BSN highly..great supplements. I use the syntha 6 edge when dieting and add in the true mass 1200 during off season as part of my post workout nutrition. Great product. only tried chocolate in the true mass but taste is Fantastic. Calories are perfect for those wanting to add more to there daily macros. best thing for me is the carbs do not all come from sugar. One main reason for me sticking to this product as a mass gainer. Great quality as always from BSM. would highly recommend...
Great product
Review posted on 16 Jul 2014
True Mass 1200 is a great buy. Very smooth, great taste and you can see it's results within a 2 to 3 weeks. Would definitely recommend for anyone doing intense weight training or even just trying to gain weight
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subset: commoncrawl


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Can one move a LED ELECTRIC lamp on Shabbat
Question: Can one move a LED ELECTRIC lamp on Shabbat? Answer: Please see the following link http://dinonline.org/2013/09/22/moving-led-flashlight-on-shabbos/
Question: There are two tables in the room. I know that there were candles (and only candles) standing on one of them when Shabbos began, and the table became a… Read more »
Is a compass Muktza?
Question: I sometimes use a compass to help with finding directions for DAVENING. Can I use a compass on Shabbos/Yomtov for this purpose? Is a compass muktza? Answer: No, a… Read more »
May one Walk/Play with a Dog on Shabbos
Question: Someone comes to us for Shabbos with a dog. May we play with the dog within an eiruv? Answer: The dog may be attached to a leash and walked…. Read more »
Removing Candelabra from Table Shabbos Morning
Is it possible to enable to take the leichter off the table shabbos morning Answer: The leichter that were lit at the onset of Shabbos become a bosis, a form… Read more »
Hiring on Shabbos
If a non jew wishes to shovel snow on your walkway on Shabbos for payment, but you want him to come back after Shabbos. Can you tell him or hint… Read more »
Moving Tefillin on Shabbat
If a talis bag containing tefillin is left on a chair in a beis medresh on Shabat, can the bag be moved in order to use that chair? Thx Answer:… Read more »
Avoiding Muktzeh
If the Halachah is, one should not use a Kli Shemelachto if one has an alternative. Therefore should one avoid remvoing and placing items in one"s oven. Answer: The chumra… Read more »
Opening Old Sefer on Shabbos
If one has a sefer that is coming apart, is one allowed to turn the pages on Shabbos, even though they might get torn out of the sefer? [They are… Read more »
Inadvertently Moving Trees on Shabbos
If a person is walking outside on Shabbos, and with his head/ hat he brushes against a tree branch or against the leaves of a tree that hang low, thereby… Read more »
Sponge in Sink on Shabbos
On Shabbos, is it permitted to turn on the water if there is a sponge lying in the sink (or is it considered "laundering")? Is it permissible to remove the… Read more »
Noisy Games on Shabbos
Is it permitted for children to play with a dice that is enclosed in a plastic dome. Squeezing the lever causes the dice to make a loud clanking sound. Would… Read more »
Velcro Wig Curlers on Shabbos
What is the halacha regarding using velcro (not heated) rollers to curl a sheitel on shabbos or yom tov? The curling is quite weak and straightens out after about an… Read more »
Moving Shabbos Lamp
Can a Shabbbos lamp be moved in order to better direct the light or one may only slide the cover over the light bulb? Answer: If the light bulb used… Read more »
Bringing In Garbage Bin on Shabbos
Can one move their garbage bin from the street curb to their house on shabbos in order to use it? Will it make a difference if the bin is empty?… Read more »
Taking off a Hair on Shabbos
Is it mutter (in terms of muktza) to take a hair off your clothing (with your hands) on shabbos? Thanks. Answer: Yes, this is permitted. The reason for this is… Read more »
New Tzedakah Box as Muktzeh
May one handle a new never used tzedakah box on SHABBOS and give it as a gift? Please send sources. Thank you. Answer: No, this is still mutkzeh and can't… Read more »
Frozen Soup on Shabbos
Is a frozen soup muktza on shabbos? If a cold drink is placed in the freezer for too long and froze can one remove it on Shabbos to allow it… Read more »
Cellphone as Muktzeh
Is one allowed to pick up a cellphone on shabbos so one can see the time or is one not allowed to move it at all? Answer: One should not… Read more »
Taking Hammer on Shabbos After Use
After I finish cracking nuts with a hammer on Shabbos, can someone take the hammer from my hand and return it to my tool room? I saw that the Mishna… Read more »
Drawers and Pockets for Muktzeh
Why is a table with a drawer that partially pulls out muktzeh, But a pocket sewn in a man's trousers does not make the trousers muktzeh? Thank you Answer: It… Read more »
Can you Take Out Garbage on Shabbat
Assuming an eruv is present.Can you take out the garbage can with garbage to the front either on Shabbat or Yom Tov for pick up? Answer: If garbage has decomposed… Read more »
Are Garbage Cans Muktzeh on Shabbat
Garbage is being picked up in my area on Shabbos. Assuming i can put the garbage out onto the curb before shabbos. Can I then bring the empty cans back… Read more »
Throwing out Garbage on Shabbos
Can someone remove garbage bag full of garbage from a garbage can on shabbos? Does it have to smell or just about to overflow? Answer: If garbage has decomposed to… Read more »
Moving LED Flashlight on Shabbos
Dear rav, I bought recently a portable LED lamp powered by batteries. Could you please tell me if portable LED lamp is muktze and whether I can use it (if… Read more »
Pulling Plastic Tablecloth from Glass Cup
If on shabbos, a disposable plastic tablecloth picks up from the wind and a part of it attaches itself to the glass cup of the neironim (the glass that holds… Read more »
Wearing Calculator Watch on Shabbos
Is one allowed to wear a calculator wrist watch on shabbos? Is there a problem of muktzah or of inadvertently pushing the buttons? Answer: It is permitted to wear the… Read more »
Mother's Milk on Shabbos
Is chalav isha that was milked on Shabbos (b'heter) muktzeh? Answer: The status of mother's milk that was milked on Shabbos involves a dispute among poskim. Most authorities write that… Read more »
Taking out Garbage on Shabbos
Can you pleease explain whether you are permitted to take out the garbage on Shabbos – of course, only in an area which has an Eiruv. Thank you very much!… Read more »
Using Bones on Shabbos for Segulah
The Gemorah in Shabbos Daf 67a gives a segulah for someone who has a bone stuck in their throat on how to get it out. The Gemorah says to bring… Read more »
Opening Car Door (and Trunk) on Shabbos
I hope the Rav had a nice shabbos! If diapers are locked in one's trunk and one has an old car with no lights on in the trunk. Can one… Read more »
Question on Muktzeh
Hi. I have a few questions. 1. There is an online company that has a promotion: get your first eyeglasses FREE. Registration/Identity is based on an email address. Is it… Read more »
Moving Plugged in Item on Shabbos
Can one move an item that's plugged into a wall, such as a hot plate that's on a timer and after it shuts off, can one move it to make… Read more »
Taking Muktzeh Toy from Child
If a child who is not yet the age of chinuch (still 4 years old) is playing with a muktseh toy a) Are we obligated to take it away from… Read more »
Moving Hefker (Ownerless) Item on Shabbos
On shabbat, in an eruv: Is it acceptable to pick up an ownerless object (a free book for instance) and move it to a slightly less exposed place in the… Read more »


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Lots of inspiration, diy & makeup tutorials and all accessories you need to create your own DIY Chewbacca Star Wars Costume for Halloween.
Get this big walking carpet out of my way! Learn how to draw a cartoon Chewbacca! We love drawing these cartoon versions of Star Wars characters. Check out our other Star Wars lessons and stay tune…
I saw the bottom of this photo first, and I thought it was a girls bun on the top of her head with snow on the side. it wasn't until I read the caption that I knew what it was. I guess I need to watch Star Wars. Original pinner said: "Chewbacca ♥"
See larger image Chewbacca Mug Features: Tall hot beverage mug with raised dimensional elements, Holds 20 ounces, Ceramic mug is dishwasher and microwave safe, Officially licensed by Disney, H …
Star Wars Spinoff Movies Include a Boba Fett Film and a Young Han Solo Movie. Disney is developing a Han Solo Star Wars spinoff and a Boba Fett movie.
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EARLY exchanges in Saturday's South Wales Senior Soccer League clash were fairly even although a Thompson cross five minutes in saw a Baker header go just over.
And things remained pretty benign until CB full back Bickley decided to move forward. Taking a return ball after his throw in, Scott Williams fired over a cross to the advancing Bickley who whipped the ball home from fully 20 yards - a stunning opener which lifted CB and helped them force Second Division opponents Tongwynlais onto the back foot for lengthy periods.
The second half was only five minutes old when a Williams free kick brought a quality diving save out of the visiting 'keeper, but then came a worrying moment for CB as a Royale back pass evaded his 'keeper to roll only inches wide. But back came CB as Baker went on a tank-like run before aiming his cross at Weekley who had an open net. However, a quality interception saved the day for the visitors.
Eventually, though, the pressure told when a long throw was headed on to Thompson who made no mistake from six yards. It was now one-way traffic as a Dawson drive was blocked on the line, only for Weekley to dispatch the loose ball from close range.
Rapid substitutions saw Bridges, Sam Williams and Reilly take the field and Ton took advantage to come back into the match for a brief spell, but not before CB had another shot cleared off the line. But then Ton broke to force Davie into two excellent saves in the space of seconds. The latter yielded a corner and Blight was on hand to reduce the arrears to 3-1 with a well-judged header. But the Ton renaissance lasted only until a short corner from Adams to Morgan saw the latter skip past a couple of tackles before firing into the far corner.
A few weeks ago an horrendous hailstorm at Ferndale resulted in the Stanleytown versus Cadoxton Barry game being abandoned only minutes into the second half - the score being 4-1 to CB at the time. Next Saturday the two sides hope for more clement weather as they plan a re-enactment; kick-off 2pm.


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Category: Home > Photo Seasons > Photo Autumn > Autumn in the woods
Photo: Autumn in the woods
Keywords: Autumn in the woods, autumn, fall, harvest,Image information
Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled "GNU Free Documentation License".
Author : Wikipedia user Johann Jaritz


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Katarina Humor Guide by Tempystt
Not Updated For Current Season
This guide has not yet been updated for the current season. Please keep this in mind while reading. You can see the most recently updated guides on the browse guides page.
Thank You!
Your votes and comments encourage our guide authors to continue
creating helpful guides for the League of Legends community.
Katarina Build
how to play katarina
thanks for readingm y guide on how to play katarina... im bronze 3 (stuck in elo hell cause of my team) and i hope this helps u get to diamond [where i belong]
sunnomer spells
take smite because CSing is suuuuuper hard and it helps u get some money and take fire too to burn ur enemies xD
this is the most imrpotant chapter..
rush liandrys no matter what. its the best item on katarina nad its SUPER OP omg. it melts tanks SOOO good and thats what katarina's purpose is. :)
U also want to buy a Warmogs armors and Ryali scepter because katarina need to be tanky =P


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Simply Peachy is a peach loving bespoke event design and planning company based in Sydney, Australia that loves a beautiful story told by a good party! We believe in celebrating all of life's special occasions – no matter how big or small. We approach each new event with the motto: "We create. You celebrate." and design events that are personal to you, ensuring that your story is told in the most authentic of ways. Our clients range from brides, event planners, designers, stylists, photographers, parents, business owners and more. We love creating something completely yours and unique (sprinkled with some fun on top), whether it's a wedding, a bridal shower, birthday party, an engagement, a photo shoot, a baby shower, an anniversary dinner a workshop or just a good old i-don't-need-a-reason-party! We love what we do and do what we love. So come on, let us celebrate and tell your story your way while you kick back and enjoy it with your loved ones.
In 2012, Sandra Chau (a hopeless romantic at heart who probably spent too much time watching and re-watching Meg Ryan rom-coms) ditched her legal career of six plus years and launched the wedding blog, Simply Peachy, capturing the eyes of fun-loving, peach-loving, colour-dreaming bride-to-bes in Hong Kong wanting something a little different, one post at a time. And it was because of her love for love coupled with her unique style, that Sandra's small site quickly gained momentum and turned into a powerhouse of all things wedding and captured the hearts of Hong Kong and the global wedding industry. Fast forward a year and still busy sharing snippets of wedding inspiration, Sandra turned Simply Peachy into a widely recognised and sought after planning and design business servicing the Asia Pacific region and quickly gained recognition as one of Hong Kong's top wedding planners. Now four years later and after one plane ride to the land downunder, Simply Peachy has expanded globally with Sandra now based in Sydney, Australia where she raises her little peach, Annabelle with her biggest fan and husband, Andy. Using her impeccable eye for detail, penchant for fun and love for a beautiful story, she puts passion and heart into pushing boundaries to create unique and memorable celebrations with a whole lot of personality. Ready to carve a new path and still as committed as ever in helping others celebrate all of life's special occasions (and not just weddings!), Sandra loves to design and plan events – whether it's a wedding, birthday party, a baby shower, an engagement, a bridal shower, a baby shower, an anniversary (or you name it!) – and wants to celebrate each and every one with you – in your unique way.
Need help with planning something awesome? Drop Sandra a line here and gain access to her treasure trove of creative inspiration.
Photo by We Are Origami Photography


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REVIEW: U2 and Rolling Stones eat your hearts out... Ed Sheeran brings it back to basics
"Hi, my name is Ed," announces the biggest sensation in popular music.
"My job for the next few hours is to entertain you."
The ginger superstar opens with a song entitled 'I'm A Mess', but he certainly isn't on this vast stage. U2 and the Rolling Stones can eat their hearts out, as Sheeran is setting a staggering new box office record. Bono or Mick Jagger couldn't emulate this in their wildest dreams.
The ginger folk pop sensation is playing to 180,000 people over two nights in Croke Park entirely on his own.
Nobody in musical history has ever played solo concerts in Ireland on this daunting scale.
Sheeran only has two albums to his name, which makes these figures all the more astonishing.
In addition to being the most streamed artist in the world and the most frequently googled male celebrity on the planet, he spectacularly bucks every other modern musical trend going.
Read more: Dublin rockers Kodaline join Ed Sheeran on stage in massive surprise for revellers
He sells truckloads of albums during a day and age when traditional over the counter record sales are in free fall.
With the benefit of three nights in Wembley Stadium to get him warmed up for Croker, Sheeran appears completely relaxed and totally up for it.
"I was nervous before the Wembley shows last week, but I'm so excited tonight," he announces to deafening screams of delight.
Sheeran beautifully segues Nina Simone's soul classic 'I Feel Good' into his own composition 'Fire' as tens of thousands of mobile phones light up the darkening sky above Croke Park. Swords band Kodaline join him for a rousing stadium rock rendition of their hit 'All I Want'.
Read more: 'That was mental....' - Ed Sheeran (and his 80,000 fans) react to Croke Park gig on social media
Read more: Seven reasons Ed Sheeran is taking over the world
Apart from this very brief guest appearance, the stage belongs to Ed Sheeran alone.
The massive production dwarfs Sheeran, but there are no fancy bells or whistles. A year after the cancelled Garth Brooks shows and all the resulting fall out, Ed Sheeran rolls into town eschewing all the smokes, mirrors and tiresome clichés associated with showbiz.
Tonight is all about him, his guitar, and over 83,000 backing singers. "Just to let you know, this is a loop pedal," he clarifies for the benefit of any doubters. "There are no backing tapes and everything you hear tonight comes out of this microphone and guitar."
Sheeran brings it all back to basics in the era of the slick and sophisticated stage show. In a notoriously slippery industry where all the good guys and girls are supposed to come last, Sheeran is blazing a spectacular trail, while writing himself into musical history in the whole crowd-pleasing process.
Online Editors
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- 'That was mental....' - Ed Sheeran (and his 80,000 fans) react to Croke Park gig on social media
- Tucked away in the Gaeltacht, Ed Sheeran fans belt out Irish language version of 'Thinking Out Loud'
- Dublin restaurant offers gingers 20pc off this weekend to mark Ed Sheeran gigs
- Dublin rockers Kodaline join Ed Sheeran on stage in massive surprise for revellers
- Seven reasons Ed Sheeran is taking over the world
- Ed Sheeran: 'I've been hanging with my gran and her dog all week'


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Many situations require something other than a full valuation report or a focus on risk alone. For these situations, BVA, LLC tailors a risk assessment to your unique needs. Using a multiple step approach, we first identify factors that create uncertainty, then appropriately quantify risk, and provide you with an in-depth discussion of the implications, if left unchecked.
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Paul A.wrote a review of Fishpond Nimbus Guide Pack - 579cu in on October 7, 2012
Fishpond Nimbus Guide Pack
Familiarity: I've put it through the wringer
I used this pack as a day pack on several trips. There is plenty of room to carry lightweight rain gear for two people and room for more stuff. I found it very comfortable while climbing and hiking the cliffs of the Upper Missouri River breaks. It is very well constructed with the wide waist belt that does not fold when packed with a lot of weight.


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I recently had a terrible experience with phone support, and I can not find an email specifically for customer service to let them know. How is it ATT doesn't have one - or are they afraid they'll be swamped?
Out of the blue our internet connection speed began dropping from 16 mbps to .25 mbps. This would happen continuously. Nothing changed on our end. I got tired of rebooting the router/modem so I called support. Phone support put me on hold then came back and told me that my problem was low internet speed. (really?) She said the line to my house was just fine.. no issue. She said sometiems speeds fluctuate and that I must have added devices (I did not add any devices.. and going from 16 MBPS to .25 is not fluctuation - it's broken)
Then she had me connect directly to the modem and the speed was fine. But the issue is erratic.. it will be drop speed and then I reboot, and it's fine. Then she told me that it must be my WAP, and ATT does not support that device. She said I needed to go out and buy one on my own. I told her my WAP is an ATT device, installed by an ATT technician. She said ATT no longer supports this hardware. I asked since when, but she wouldn't answer. Instead she said she'd transfer me to advance tech help... I waited , waited, finally when I was transfered it was a PAY LINE. They wanted my credit card number to assist me. SAY WHAT???
I then tried live chat.. but I used the wrong live chat.. and the link that tech gave me was a non working live chat. I then found the correct live chat but got disconnected.
Finally I reached someone on the chat (way better than the phone support) who made an appointment for a technician to come out to the house. The technician replaced my modem/router which had gone bad. This took only minutes to type.. but the process between being on hold, waiting waiting, losing chats, gaining chats, explaining, took an entire day. It was exhausting.
Having a tech person tell me that ATT does not support its own devices, and then sending me to a PAY LINE was the icing on the cake. Someone needs to know so that no one else has to go through this nonsense. I was told that a customer service rep would be in contact with me, but it never happened. So, What email can I use to report this? Thank you.
I have also been frustrated by lack of option to email for support . . . .
Do what I did....call the corporate office in Dallas. When you call ask for senior management for u-verse. I explained my issue to a very understanding person and within 30 minutes I received three calls. The problem that I could not get resolved for several days was taken care of in less than three hours.
I usually don't do this but I was so frustrated by the lack of knowledge of the script readers that AT&T hires.
Let us help you Give the Gift of AT&T Entertainment this holiday season!


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Arctic air continued to surge into the central U.S. on Tuesday, while record-breaking snow buried portions of the upper Midwest.
WINTER IS ON… US snow cover currently stands at 19.5%, up from a mere 0.3% last month… pic.twitter.com/KhdwTGIyXl
— MarkVoganWeather.com (@MarkVogan) November 11, 2014
Temperatures were only in the single digits, teens, and 20s across much of the north-central U.S. as of Tuesday morning. Temperatures Tuesday are forecast to be 20 to 40 degrees below average for areas east of the Rockies into the Great Plains, the National Weather Service warned.
Wind chills were as cold as 20 below zero in portions of western Montana on Tuesday.


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High Risk of IT Project Failure and Inefficiency
Today's business projects are larger in size and scale and becoming more heavily dependent on advanced, complex technology solutions. Companies are facing increasing pressure to control costs and are specifically targeting IT due to its high percentage of the overall budget.
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- Defining Project Management Lifecycle Programs & PMO's


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Super Rugby
Lam hails savvy Blues
ESPNscrum Staff
June 25, 2011
Lock Ali Williams was one of the Blues' star performers in their victory over the Waratahs in Auckland © Getty Images
Blues coach Pat Lam heaped praise on his resurgent side after they booked a place in this year's Super Rugby semi-finals.
The Auckland-based side set up a showdown with the Reds in Brisbane next weekend with a 26-13 victory over the Waratahs at Eden Park on Friday night. Tries from winger Lachie Munro and lock Ali Williams propelled the Blues into the final four for the first time since 2007 but Lam was more impressed with the fact his side have learnt from their recent four-match losing streak.
The Blues only stopped the rot last week when beating the Highlanders in the last round of the regular season, but Lam said the lessons from that run of results were a weapon in subduing the Waratahs. "Things that happened out there in the four losses we had, a lot of lessons and things we didn't quite do right before, as a coach it was just so pleasing to see them tidy things up there and emphasise the learning that has happened from those games," Lam said.
"I know everyone thought we were imploding from the four losses but your team culture, systems and structures have to be tested as you go through and it doesn't get tested at nine games undefeated. It gets tested under four losses and that's where you get the growth and that's what I saw out there which was pleasing."
Blues captain Kevin Mealamu hopes the team can now build on the victory, having conquered early nerves against the Tahs. "We're really happy with the way we're going at the moment," he said. "There was a lot of emotion during the week and that's probably why we didn't get off to as good a start as we would have liked. But after 20 minutes we got back into our work and I was really happy with the team."
Retiring Waratahs captain Phil Waugh felt their failure to accumulate more points during a dominant first quarter put the team under too much pressure. The Tahs led 5-0 early on but eventually succumbed to 26-13 loss to end their season. "They played smart football. I thought Stephen Brett and [Luke] McAlister controlled the game very well. Once they were under pressure they turned us round and put us under pressure," Waugh said.
"It was a difficult night for us. You can't question the guys' character and effort. We just played not the smartest football. We could've played down their end a bit more and not put ourselves under as much pressure as we did. In saying that we had a good crack and the guys, in terms of their character, stood up and did as well as we could. I was pretty proud of the guys."
© ESPN Sports Media Ltd.
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Thx Oggie 4 Nominatin 'Big Super Happy Fun Quick Game!
Most Popular Tags: fun hard game cool adventure easy awesome good war space the impossible is monster battle crystal play best rpg this awsome kill action a escape
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This is a game made with Sploder's platformer game creator.


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Kannamoochi Yenada Trailer (2007)
08 November 2007 145 mins
Harish Venkatraman (Prithviraj Sukumaran), a software architect by profession who lives in Malaysia, is the millionaire nephew of Maheswaran Iyer (Radharavi). Having lost his parents early in life, he runs the business of his uncle with impressive results. He stumbles upon the psychiatry student Deva (Sandhya), in the most cinematic manner, and as script would have it, falls for her that very instant. Deva is the daughter of Commissioner Arumugam (Sathyaraj) and Dhamayanthi (Raadhika Sarathkumar) in Chennai.
Watch the official Kannamoochi Yenada 2007 trailer in HD below or find more Kannamoochi Yenada videos on Vidimovie.