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First Words Kids Learning Lite
by: ThoughtTree • 18
All Android applications categories
by: ThoughtTree • 18
First Word Kids Learning is a fun way to self learn for your kids, Its REAL TIME PHYSICS, BEAUTIFUL GRAPHICS, SOUNDS and SOUND EFFECTS will keep your children's busy with there self learning activity. You don't even realize and within a WEEK or two your kids have mastered in there ALPHABETS, NUMBERS and FIRST WORDS. and within MONTH they can read the alphabets from the book (Results: from our own observations done on two girls aging 2-3 Years)
We designed it as complete SELF LEARNING program, you just have to show them how to use once and that's it.
$ REAL TIME PHYSICS (simulates the real time behaviors of the boxes, kids really LOVE that)
$ Accelerometer censored to adds more fun
$ MAGIC MOVE (Hold the box with one finger and immediately hold your other finger to place where you
want to move that box and release the finger from the box , see the magic!!!)
$ Contains around 200 Images, Pronunciations for all the characters and with sound effects for the images.
$ 125+ Words with Images, its pronunciation and sound effect for kids to learn
$ 0 - 9 Numbers with Images, its pronunciation and sound effect to introduce kids with number system.
$ A - Z alphabets with Images, its pronunciation and sound effect
$ Words Show Menu - don't want to play the game, enjoy the words show.
$ Sub Game 1 - Kids can blast the bubble by tapping on them.
$ Sub Game 2 - instead of drag drop the boxes to the target kids can tilt your tablet or phone and navigate
boxes to the target and then click on it.
Use this advance learning system to SUPER BOOST to your kids growth!!!. They will never forget what they have learned by their own.
Keywords: Kids, ABC, ABCs, Letters, Reading, Educational, Children, Games, Preschool, alphabet ,game, learning ,teaching app, teaching game,learning game,learning apps for kids, baby ,toddler , flashcards, pronunciation, abcd, kid, Child, School, Reading
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Hair Loss » Blog » What Is Dandruff? It Is Pityriasis Simplex. But What Is Dandruff?
Question: What Is Dandruff?┬Ā
Answer: Pityriasis simplex is known more commonly as dandruff. It is characterised by the excessive shedding of the scalp's epidermal cells, which leads to visible flaking or scaling. These scales can accumulate on the surface of the scalp in localized patches or more diffusely. The exact cause is uncertain, although the bacteria pityrosporum ovale and increased sebaceous activity have been suggested as factors.
Do you have Hair Loss Problems, read our Hair Loss Help
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The Hair Centre specialise in hair assesment and hair loss treatment, supplying a wide variety of products that will aid hair regrowth.
The Hair Centre (London) Ltd registered in the UK 7256102 VAT NO 971 1090 35

subset: commoncrawl


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Published on June 1st, 2007 | by Jules Yap1
megan's breakfast bar
megan sent me a couple of hacks and attributes them to gerard rabara, a friend who is a student at FIT in NYC. certainly handy to have design student friend around. the first is a floating breakfast bar for her new apartment.
"when i moved, i was sick of my ikea coffee table (discontinued, i think) and wanted to do something unique in my new apartment. so i disassembled the coffee table, cut the top of it into 2 pieces. i placed the narrow piece against the wall (my friend ron's idea) and mounted the wide piece on 3 supporting valter brackets."
One Response to megan's breakfast bar
wow, what a cool idea. i tried to do something like that, but it didn't turn out too well.


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- Released: Jan 1, 1988
- Sound: 7
- Lyrics: 2
- Overall Impression: 6
Users' score:
(23 votes)
Sound — 7
This is the second and final record of the band cacophony. The lineup has changed, as atma anur was replaced with Kenny Stavropoulos, and Jimmy O`shea was added as a bass player. The actaul drumming on the record was done by Deen Castronovo, as kenny joined them for the tours. Guitar masters are really shining in this one too, becker and friedman do a great job as usual, with crazy and complex lead guitars, harmonized. The songs are more focused on the whole band, unlike last album which was a complete showcase for Becker and Friedman. Review of the songs: 01.X-Ray Eyes: I really hate the vocals here, the riffs kinda annoy me too, but in 2:00 becker kicks in with crazy legatos, then to a melodic solo (utilizing the whammy bar). then marty gets the lead, and they switch between them. great leads that make up for the rest. 02.E.S.P: cool song! Nice acoustic intro, which leads into the main riff. Vocals are better than the first song, but still annoy. The lead section here is amazing! Starting with harmonized diminished arpeggios, to a beautiful melody which you can sing to. 03.Stranger: probably the weakest song on this record. Becker wrote this one, the riffs are kinda in your face, the vocals are actually ok, the lead work here is not really interesting. Although one of the solos is something becker recorded by flipping the tape and playing over it, as twisted and original that it sounds, it doesn`t save the song. Sorry! 04.Go Off!: the title track is a complete ear orgasm! Crazy playing all over the place, you can totally tell the difference here between the two axe-men. Becker is the fast-ass guy who screws around with the tremolo, making his guitar cry and squeal, while friedman sticks with his asian influenced phrasing, odd bends and a great melodic sense. Highly recommended, this one will probably make you want to throw your guitar away. (for the guitarists among us) 05.Black Cat: another great song! Everything is great in this one. The main melody is original, sounds very asian, yet you can sing to it. Vocals actually kick-ass in this one, very funny lyrics. Guitars are doing an awesome job, riffs, leads, all over the place. The ending is just magical, as they play a mellow acoustic piece in E major, and solo over it beautifully. 06.Sword Of The Warrior: great drumming, brutal song. Hate the vocals here, they`re just disgusting. The lead section here is just brilliant! B&f screw around with harmonizing, as the lead section starts with a major 3rd harmony, and descending until they play a very dissonant and yet awesome minor 2nd harmony! The rest of the leads are great too. 07.Floating World: best vocal performance! No doubt. I think that's a very under-rated song, its beautiful and melodic. The solos here are just full with emotion, you can cry off it. Kudos to peter marrino, for finally pulling off a good job. 08.Images: Becker`s piece, its brilliant. That song is full with melodies and moods, you`ll enjoy it.
Lyrics — 2
The lyrics aren`t really important, because that band is known for it's awesome guitar duo. Lyrics are mainly stupid, not something you can take seriously. I gotta say the "Floating World" lyrics are kinda nice! If you wanna listen to cacophony for the lyrics, you got the wrong idea, cause you`ll be disappointed. Just focus on the music. Peter Marrino most of the time is just annoying, I find myself skipping songs to the solos.
Overall Impression — 6
This is a classic record in terms of guitar playing, just because Becker and Friedman are awesome guitarists and song writers. It's less wanky than the last one, they learned to balance the shred stuff. The highlights are title track, Black Cat, Floating World and Images. The production is better this time. After this one both axe-men went their own way, although they helped each other in their solo records. If you like the guitar playing, I highly suggest you check the first record, speed metal symphony. Also check "Perpetual Burn" by Becker, and "Dragons Kiss" by Friedman. You wont be disappointed.


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My Nonprofit Reviews
Carl F.
Review for Sepsis Alliance, San Diego, CA, USA
The Sepsis Alliance helps educate the public and healthcare professionals alike. As the Founder, who lost a young daughter to sepsis and a victim myself, I can say my involvement helping others and saving lives and limbs has been therapy for me to live on with out my daughter. This organization of dedicated lay individuals and health care professionals provides comfort to me and solace that I am doing something positive to continue to heal from a personal tragedy . This work will keep me alive! SA will save " Lots of Erins"!
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Harvest Hoe Down to benefit Marlborough Senior Center
By Joan F. Simoneau, Community Reporter
Marlborough – The Friends of the Marlborough Seniors recently received sponsorship checks for an upcoming fundraiser. New Horizons Independent and Assisted Living Community and Marlborough Hills Healthcare Center made significant donations to sponsor the Harvest Hoe Down, an event planned for Friday, Oct. 19, to raise money for the building fund for a new Senior Center. The checks will help to cover the expense of the Hoe Down, so that ticket and raffle sales will all be profit.
Among those present for the formal presentation of the donation was Tammy Pozerycki, director of? Pleasantries Adult Day Services and a board member of the Friends of the Seniors, who expressed her gratitude for all the services offered at the local Senior Center, which greatly enhances the lifestyle of seniors throughout the city, she said.
The site for a new Senior Center is currently under discussion by members of a special advisory committee appointed by Mayor Arthur Vigeant.? Several locations have been considered, including the West Meetinghouse on Pleasant Street, the Bigelow School on Orchard Street and the old landfill site on Bolton Street. A decision will be made in the near future.
James Confrey, chair of the Council on Aging (COA), held a special meeting last fall where the mayor, City Council and the city's seniors heard a formal presentation of changes the COA is suggesting in the new Senior Center. These changes include additional and adequate space for administrative offices, programs, events and storage; handicap accessibility, plentiful parking and a transportation plan. Funds from the Seniors Building Fund will help fill these requests.
The Hoe Down will run from 5 to 8 p.m. at the Marlborough Fish and Game Club, 1 Muddy Lane, and will feature a family-style dinner, music by DJ Ricky, ballroom dancing, line dancing and a raffle offering a wide variety of prizes. For more information on the Hoe Down, call 508-485-6492.? Tickets are $12 and are available at the Senior Center, 250 Main St.
Short URL: http://www.communityadvocate.com/?p=27202


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Nicole Scherzinger and Lewis Hamilton reportedly split up because he isn't ready for children.
The 33-year-old singer and the 26-year-old Formula 1 driver recently called time on their four year relationship and although their hectic schedules were thought to be to blame, friends have revealed Lewis' reluctance to settle down caused the split.
A source said: "Lewis decided they had to part, she wanted more than he could offer at this stage in his life."
Nicole is reportedly devastated about the break-up of their relationship, even asking for time off from filming the US 'X Factor' but show bosses have said no because they have are currently working on the live shows.
The source added to the Daily Mirror newspaper: "Nicole's asked for time off given everything that's happened, but her busy schedule just didn't allow it.
"She's completely devastated but has no choice other than sticking a big smile on her face and going about her engagements."
Meanwhile, Lewis has insisted the pair will remain friends and says he feels "pretty good".
He said: "We're friends and we can move forward. These times are sent to try you, it's about how you pull through. I have my family who are helping, so I feel pretty good."
- Nicole Scherzinger and Lewis Hamilton: Secret meetings
- Nicole Scherzinger and Lewis Hamilton: Split up?
- Nicole Scherzinger: Her plan to get Lewis Hamilton back
- Nicole Scherzinger: Romance on the rocks?
- Lewis Hamilton is renting two houses in Los Angeles
» Justin Bieber wants to have hair like David Beckham


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Set to be the pinnacle of motorcycle performance, the Ninja H2R is a supercharged motorcycle masterpiece. Created with cooperation from across the engineering and technology scope of Kawasaki heavy industries, the Ninja H2R matches cutting-edge engine, performance, the highest quality chassis dynamics and a host of craftsmanship details to create a new two-wheel icon.
This Vehicle is not manufactured for public road use.
Our prices are unbeatable! please submit an online enquiry and we will get back to you within 24 hours with the best UK deal. All part exchanges taken.
Bike: Kawasaki Ninja H2R
Bike: Kawasaki Ninja H2R
|Engine type
|Liquid-cooled, 4-stroke In-Line Four
|998 cm3
|Bore x stroke
|76.0 x 55.0 mm
|Compression ratio
|Valve/Induction system
|DOHC, 16 valves
|Fuel system
|Fuel injection: Ø 50 mm x 4 with dual injection
|Forced lubrication, wet sump with oil cooler
|Performance & Transmission
|Maximum power
|228 kW {310 PS} / 14,000 min
|Maximum power with RAM Air
|240 kW {326 PS} / 14,000
|Maximum torque
|165 N.m {16.8 kgf.m} / 12,500
|6-speed, return, dog-ring
|Final Drive
|Primary reduction ratio
|1.551 (76/49)
|Gear ratios: 1st
|3.188 (51/16)
|Gear ratios: 2nd
|2.526 (48/19)
|Gear ratios: 3rd
|2.045 (45/22)
|Gear ratios: 4th
|1.727 (38/22)
|Gear ratios: 5th
|1.524 (32/21)
|Gear ratios: 6th
|1.348 (31/23)
|Final reduction ration
|2.333 (42/18)
|Wet multi-disc, manual
|Brakes, front
|Dual semi-floating ø330 mm discs. Caliper: Dual radial-mount, opposed 4-piston
|Brakes, rear
|Single ø250 mm disc. Caliper: Opposed 2-piston
|Suspension, front
|ø43 mm inverted fork with rebound and compression damping, spring preload adjustability and top-out springs
|Suspension, rear
|New Uni-Trak with gas-charged shock, piggyback reservoir, dual-range (high/low-speed) compression damping, rebound damping and preload adjustability, and top-out spring
|Frame & Dimensions
|Frame type
|Trellis, high-tensile steel, with Swingarm Mounting Plate
|25.1o / 108 mm
|Wheel travel, front
|120 mm
|Wheel travel, rear
|135 mm
|Tyre, front
|Tyre, rear
|Steering angle, left/right
|27o / 27o
|Dimensions (L x W x H)
|2,070 x 770 x 1,160 mm
|1,450 mm
|Ground Clearance
|130 mm
|Fuel capacity
|17 litres
|Seat height
|830 mm
|Curb Mass


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|Publication number
|Publication type
|Application number
|Publication date
|Dec 16, 2008
|Filing date
|Aug 31, 2004
|Priority date
|Jun 13, 2001
|Fee status
|Also published as
|Publication number
|Kie Y. Ahn, Leonard Forbes
|Original Assignee
|Micron Technology, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (61), Non-Patent Citations (12), Referenced by (4), Classifications (28), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
This patent resulted from a divisional application of U.S. patent application Ser. No. 10/174,434, filed on Jun. 17, 2002, which resulted from a divisional application of U.S. patent application Ser. No. 09/881,408, filed on Jun. 13, 2001 now U.S. Pat. No. 7,037,862.
The present invention relates generally to methods of forming dielectric layers and the devices fabricated therewith. More specifically, the present invention relates to methods of forming dielectric layers having high dielectric constants by depositing oxidizable materials over a semiconductor substrate and oxidizing the materials to form amorphous oxides. The invention also pertains to devices formed employing such oxides.
Increasing the performance of integrated circuits (ICs), both with regard to more complex functionality and higher speeds, is a primary goal of efforts in advancing the semiconductor arts. One method that has been extensively employed to achieve this goal is scaling, that is decreasing area or size of individual device components that are used to form such integrated circuits. For example, the gate length of a typical MOS transistor has been reduced over the past several years from several microns to fractions of a micron and gate lengths of 0.1 micron or less will soon be desired. Such scaling efforts have also effected the size of capacitors used in a variety of ICs such as DRAMS and SRAMS (dynamic and static random access memories, respectively).
While such scaling efforts have resulted in the desired increases in performance, generally such size reductions also impact at least some characteristics of the devices so "scaled." For example, reducing the gate length of a transistor generally reduces the transistor's output and decreasing the size of a capacitor generally reduces the capacitance or amount of charge such a capacitor can store. Fortunately, changing other features of devices such as transistors and capacitors has made it possible to retain or at least control such changes in their aforementioned characteristics. Thus as transistor gate length has been reduced, the gate dielectric layer's thickness has also been reduced to at least partially compensate for the change in device output. Similarly, as the size of capacitor structures has been reduced, materials such as hemispherically grained polysilicon (HSG) have been employed to increase the effective surface area of such structures and compensate, at least in part, for such size reductions.
However, it appears likely that as scaling continues such exemplary compensation techniques may not be possible. Silicon dioxide (SiO2), with a dielectric constant of about 3.9, remains the most common material employed for gate dielectric layers. To maintain transistor output at an acceptable level, a transistor having a gate length of 0.1 micron will require an ultra-thin SiO2 layer with a thickness of about 2 nanometers (nm). Ultra-thin being defined herein as a thickness of about 5 nm or less.
The forming and use of such ultra-thin SiO2 layers is problematic for a variety of reasons since such layers consist of only a few layers of molecules. Thus only one additional or missing layer of molecules can have a dramatic effect on device performance; for example where a desired layer is four SiO2 molecules thick, a change of one molecule will change a characteristic such as the layer's capacitance by as much as 25%. In addition, such thin layers typically exhibit high current leakage, for example due to band to band or Fowler-Nordheim tunneling. Such layers are also more susceptible to dopant penetration or diffusion through the layer thus changing the characteristics of an adjacent layer or region; for example boron diffusion from the gate electrode into the channel region alters channel characteristics.
One method of reducing these problems is the use of a thicker layer of an alternative dielectric material such as a metal oxide having a higher dielectric constant than that of SiO2. For the purpose of illustration, a metal oxide gate dielectric having an appropriately high dielectric constant can be formed with a thickness several times that of a SiO2 layer while having the performance characteristics of the thinner SiO2 layer. Thus the thicker metal oxide layer is said to have the equivalent oxide thickness (EOT) of the thinner layer. Alternate metal oxide materials such as titanium oxide (TiO2), aluminum oxide (Al2O3), tantalum oxide (Ta2O5) and others have therefore received attention as replacements for SiO2. However, such alternate materials must exhibit, in addition to a high dielectric constant (greater than that of SiO2), a large band-gap with a favorable band alignment, low interface state density, good thermal stability and the ability to be formed in a manner consistent with known semiconductor process methods at reasonable cost and yield. Unfortunately, many candidate metal oxide materials having an appropriately high dielectric constant, cannot meet these additional requirements. Thus it would be desirable to provide alternate dielectric materials and methods of forming such materials that are appropriate as a replacement for ultra-thin SiO2 layers.
Embodiments in accordance with the present invention provide dielectric materials, methods of forming such dielectric materials, and semiconductor devices that employ such dielectric materials. Such embodiments provide for the forming of a first metal-containing dielectric layer over a silicon-containing surface of a substrate and the forming of a second metal-containing dielectric layer on the first layer. In embodiments of the present invention, the first and second metal-containing dielectric layers encompass elements selected from Group IVB and Group IIIB of the Periodic Table of Elements, respectively.
In some embodiments, a silicon dioxide layer is first formed and a first metal-containing layer is formed overlying such silicon dioxide layer. Advantageously, the metal of the first layer encompasses an element that can combine with the oxygen of the silicon dioxide to form a metal oxide material of the first metal-containing dielectric layer and chemically reduce the silicon dioxide to silicon.
In some embodiments in accordance with the present invention, one or more metal-containing layers are exposed to an atmosphere that encompasses oxygen while heating the exposed layers to a temperature effective to transform such metal-containing layers to metal-containing dielectric oxide layers. In some embodiments, such exposing encompasses ion bombardment of the metal-containing layers, and in some embodiments such exposing encompasses providing oxygen radicals to the metal-containing layers.
Embodiments in accordance with the present invention provide for forming the first and second metal-containing dielectric layers having a wide ratio of relative thicknesses, for example from a ratio of about 1:5 to about 5:1 or greater. In embodiments of the present invention, such forming can be provided by physical vapor deposition (PVD) where a metal-containing layer of each formed layer is first deposited having a thickness of about 10 nanometers (nm) or less. In embodiments of the present invention, such PVD methods include electron beam evaporation techniques or other methods for forming high purity material layers by PVD. For example in some embodiments, radio frequency or microwave energy is employed for heating rather than an electron beam.
Embodiments of the present invention can encompass semiconductor devices such as MOS transistors, capacitors and the like. Such devices are formed using metal-containing dielectric layers in accordance with the present invention.
Some embodiments encompass integrated circuits such as dynamic and static random access memories (DRAMs and SRAMs) which include transistors, capacitors and the like that are formed employing metal-containing dielectric layers in accordance with the present invention, where such layers are also formed by methods in accordance with the present invention. In some embodiments of the present invention, semiconductor devices encompassing a metal-containing dielectric layer have an equivalent oxide thickness (EOT) of 2 nm to 5 nm. Advantageously, metal-containing dielectric layers in accordance with the present invention having an EOT of less than 2 nm are also possible.
Embodiments in accordance with the present invention are described below with reference to the following accompanying drawings.
This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws "to promote the progress of science and useful arts" (Article 1, Section 8).
Embodiments in accordance with the present invention will be described with reference to the aforementioned figures. Various modifications, adaptations or variations of the specific methods and or structures described may become apparent to those skilled in the art as embodiments of the present invention are described. All such modifications, adaptations or variations that rely upon the teachings of the present invention, and through which these teachings have advanced the art, are considered to be within the scope and spirit of the present invention.
To aid in interpretation of the description of the illustrations and claims that follow, the term "semiconductor substrate" is defined to mean any construction encompassing silicon semiconductive material, including, but not limited to, bulk silicon semiconductive materials such as a silicon semiconductor wafer (either alone or in assemblies encompassing other materials thereon) and silicon semiconductive material layers (either alone or in assemblies encompassing other materials). The term "substrate" refers to any supporting structure, including, but not limited to, the semiconductor substrates described above. In addition, the terms "high dielectric constant material" or "hi-K material" are used interchangeably herein and refer to materials having a dielectric constant that is greater than that of thermally grown silicon dioxide, which is generally understood to have a value of approximately 3.9 or higher.
Referring to
As described above, semiconductive substrate 20 is defined to mean any construction encompassing silicon semiconductive material. Generally a cross-sectional representation of such a semiconductive substrate 20, will include a variety of doped regions as are needed to form semiconductor device structures. Some of such doped regions, for example well regions, being present even at an early stage of processing. However, for ease of understanding the present invention, such doped regions that may be present are not shown in
Surface 22 is an outermost boundary of substrate 20. For illustrative purposes, surface 22 can be an upper surface of a single crystal silicon substrate, an epitaxially grown silicon layer or any other appropriate silicon-containing material. Silicon dioxide layer 30 is an optional layer. That is to say that, in some embodiments of the present invention such a layer is present at this early stage in the processing and in some it is not present. In addition, it will be understood that in those embodiments where the optional silicon dioxide layer 30 is present, such layer is either a "native" oxide layer or an oxide layer that is formed to have a specific thickness by a process selected for the forming of such a layer. Where silicon dioxide layer 30 is a "native" oxide layer, it will be understood that such a layer is formed spontaneously upon exposure of silicon surface 22 to an oxygen-containing ambient, generally at or near room temperature. Alternatively, where silicon dioxide layer 30 is a purposely grown layer, such layer results from exposure of surface 22 to oxidizing conditions such as an oxidizing ambient, at an elevated temperature. Furthermore it will be understood that "native" oxide layers are essentially self-limiting in thickness and are generally limited to about one or two molecular mono-layers in thickness. However, where layer 30 is a purposely grown layer, such layer can be formed having essentially any thickness and where employed in embodiments of the present invention, is typically grown to a few nanometers in thickness, for example, 5 nanometers or less, although any other thickness is also appropriate.
Generally, where electrical contact to surface 22 is desired, it is known to remove such a layer as oxide layer 30 from over all or some portions of surface 22 prior to forming any layer from which the electrical contact will be made. For example, Maiti et al. (U.S. Pat. No. 6,020,024, entitled "Method for Forming High Dielectric Constant Metal Oxides," hereinafter US'024) state at column 2, lines 61-65, that semiconductor substrate 12 (
Still referring to
In some embodiments of the present invention, the thickness of layer 40 will be 1 nanometer (nm) or less, while in other embodiments the thickness will be as much as approximately 5 nm or more. Such variations in thickness are a function of, among other things, the use or non-use of the optional silicon dioxide layer 30, and the purpose for which a finally formed dielectric layer, in accordance with the present invention, is intended. For example, as will be discussed below, in some embodiments of the present invention a gate dielectric layer is formed and in other embodiments of the present invention a capacitor dielectric layer is formed. As one of ordinary skill in the art is aware, the thickness of such layers can vary widely.
Metal-containing layer 40 is most advantageously formed by a physical vapor deposition process (PVD). While any of the several common PVD processes such as sputtering or evaporation can be used, it is found advantageous to use an evaporative process and in particular an electron beam evaporative process. For example, where an electron beam evaporative process is employed, it is found that an initial purity level of the source material for the PVD process can be provided to layer 40. That is to say that the level of purity of the source material and initially deposited metal-containing layer is essentially unchanged. However, it will be understood that the other methods of forming metal-containing layer 40 are within the scope and spirit of the present invention, for example evaporation methods where a heating source other than an electron beam is employed or any other appropriate PVD method capable of providing the initial purity level of the source material to layer 40, can also be advantageously used.
Still referring to
Generally, metal-containing layer 50 is formed in the same manner as is metal-containing layer 40. That is to say, by using a physical vapor deposition (PVD) method as previously described. However, while layers 40 and 50 can be formed in distinct PVD processes, it is generally advantageous to form both layers using a single, unified PVD process. For example, such a unified deposition or forming process would generally provide that substrate 10 a is placed into a PVD system and a material of the first metal-containing layer 40 is formed thereon until a desired thickness of layer 40 is formed. In some embodiments, once a first thickness of first layer 40 is obtained, the forming of first layer 40 is stopped and a forming of second layer 50 is begun within the same PVD system. Subsequently, the forming of second layer 50 is stopped once a desired second thickness for such layer is obtained or when a desired total thickness of layers 40 and 50 is obtained.
In some embodiments, after the first thickness of layer 40 is formed, the forming of layer 50 is begun without a prior stopping of the deposition of the material of layer 40. In this manner the material of second metal-containing layer 50 will be combined with some material of first metal-containing layer 40 in at least an interfacial region (not shown) of such second layer 50. It will be understood that in some embodiments, such a mixing of the materials of first layer 40 and second layer 50 is limited to such an interfacial region by stopping the forming of the material of layer 40 after the forming of the material of layer 50 is started. In other embodiments, the forming of the material of layer 40 is not stopped once the forming of the material of layer 50 is started, rather both materials are formed until a desired thickness is obtained thus, essentially all of second layer 50 is a mixture of materials. In addition, as discussed for first metal-containing layer 40, a desired thickness for second metal-containing layer 50 can also vary as a function of the several factors mentioned for layer 40 as well as the thickness of first layer 40 previously deposited. Thus, the thickness of such layer 50 generally has the same range as provided above for the thickness of layer 40.
It has also been found that in some embodiments in accordance with the present invention a specific ratio of thickness for first layer 40 to second layer 50 is advantageous. For example where an optional silicon oxide layer 30 is used, generally a thin layer of a hafnium-containing metal layer 40 is formed, about 1 nm or less, and employed to reduce such silicon oxide layer 30 prior to forming second layer 50. The subsequent second metal-containing layer 50 is formed with an appropriate thickness, for example a layer of lanthanum-containing metal having a thickness of between about 3 to 5 nm. Advantageous thickness ratios of first metal-containing layer 40 to second metal-containing layer 50 have been found to vary with ratios from about 1:5 to about 5:1 being typical.
Turning now to
First metal-containing dielectric layer 45 and second metal-containing dielectric layer 55 are formed from first metal-containing layer 40 and second metal-containing layer 50 (of
Generally, conditions for the chemical reduction of optional silicon oxide layer 30 with the material of layer 40 encompass providing temperatures between about 200� C. and 400� C. as an inert atmosphere is typically provided such that layer 30 is essentially the only source of oxygen present. However, where silicon oxide layer 30 is not present, or after the chemical reduction of such silicon dioxide layer, other methods for the oxidation of portions of layer 40 not completely oxidized and/or layer 50 are employed. Such other methods include, but are not limited to, the use of remotely formed oxygen radicals; ion bombardment of such metal layers with oxygen ions and thermal oxidation of such layers in an oxygen comprising atmosphere at appropriate temperatures. Typically such low energy ion bombardment is performed using relatively high plasma densities, typically above 1012/cm3, and low electron temperature, generally less than 1.3 eV, and where oxygen radicals are used, generally such radicals are formed using appropriate radio frequency or microwave energy which is applied to an oxygen comprising gas stream at a reduced pressure. In addition, generally the use of ion bombardment and/or oxygen radicals is provided in combination with a thermal treatment. By means of example, it is found effective to convert metal-containing layers 40 and 50 to their respective metal-containing dielectric layers 45 and 55 by providing ion bombardment of the layers using a mixed gas with about 3% to 5% oxygen in an inert carrier such as Ar or Kr. The layers are held in such gas mixture at a pressure of about 1 Torr and a temperature of about 250� C. to about 300� C. with a microwave power source applying a power density of about 3-7 W/cm2. It will be understood that such oxidation conditions represent only one effective method and that other appropriate and effective methods can be used to form one or both of dielectric layers 45 and 55 from layers 40 and 50 either collectively or individually.
Referring to
Transistor or integrated circuit embodiments in accordance with the present invention that have an equivalent oxide thickness of about 2 nm or less, advantageously provide for readily forming gate dielectric layer 60 having a desired EOT that would not be otherwise practical. Thus, methods for incorporating materials with high-dielectric constants, such as oxides of Group IIIB and IVB metals, over a silicon substrate are provided where such materials can be formed into a stacked amorphous metal oxide-containing gate dielectric structure such as gate dielectric 60.
Turning now to
Capacitor dielectric 64 is advantageously formed from first and second metal-containing layers deposited over lower electrode 82 in a manner analogous to that described previously with
The previously described methods of converting Group IVB and IIIB metals into metal oxides are not limited to extremely thin films, thus thicker metal-containing layers, suitable for forming capacitor dielectric layers having a thickness of 10 nm or more, can be first deposited and then transformed into a metal-containing dielectric layer. As previously mentioned, Group IVB metal oxides in general and HfO2 in particular, are/is resistant to impurity diffusion so that such materials can be oxidized over a lower capacitor electrode 82 formed from silicon-comprising materials such as any of the various forms of polycrystalline silicon without oxidizing such lower electrode 82.
In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. In addition, advantages of the invention of the instant application have become apparent by and through the descriptions and examples provided. Thus it will be understood that the use of stacked amorphous gate oxide layers formed of Group IVB and IIIB metal oxides advantageously provides a final layer that has a high dielectric constant of about 27 to 29, and is both thermally stable and protective of underlying layers to impurity diffusion. It will be understood that the selection of Hf and La forming the metal-containing layers is particularly advantageous although other metals from Group IVB and IIIB are also appropriate. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.
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|Plasma-enhanced magnetron-sputtered deposition of materials
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|High-dielectric-constant material electrodes comprising thin platinum layers
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|Method for forming high dielectric constant metal oxides
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|Zirconium and/or hafnium silicon-oxynitride gate dielectric
|Oct 30, 1998
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|Process for forming a high-K gate dielectric
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|Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same
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|Methods for forming metal oxide layers with enhanced purity
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|Ultraviolet/infrared absorbent glass
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|Jun 4, 2002
|Sharp Laboratories Of America, Inc.
|Composite iridium barrier structure with oxidized refractory metal companion barrier and method for same
|Apr 24, 2000
|Jun 18, 2002
|Sony Corporation
|Oxygen diffusion blocking semiconductor capacitor
|Feb 11, 2000
|Jun 18, 2002
|Sharp Laboratories Of America, Inc.
|Multilayer dielectric stack and method
|Apr 18, 2001
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|Mitsubishi Denki Kabushiki Kaisha
|Semiconductor device and manufacturing method thereof
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|Sep 3, 2002
|Motorola, Inc.
|Dual metal gate transistors for CMOS process
|Jun 20, 2000
|Sep 3, 2002
|International Business Machines Corporation
|Interfacial oxidation process for high-k gate dielectric process integration
|Mar 26, 2001
|Nov 5, 2002
|Kabushiki Kaisha Toshiba
|Semiconductor device and method of manufacturing the same
|Sep 11, 2000
|Dec 17, 2002
|Agere Systems Inc.
|Method of fabricating a dielectric layer
|Aug 31, 2000
|Dec 17, 2002
|Kabushiki Kaisha Toshiba
|Field-effect transistor with multidielectric constant gate insulation layer
|Apr 20, 2001
|Feb 4, 2003
|Micron Technology, Inc.
|Method of fabricating a highly reliable gate oxide
|Aug 21, 2000
|Feb 25, 2003
|Micron Technology, Inc.
|Fast-sensing amplifier for flash memory
|Jan 7, 2000
|Apr 8, 2003
|Texas Instruments Incorporated
|Chemical vapor deposition of silicate high dielectric constant materials
|May 26, 2000
|Jun 3, 2003
|Motorola, Inc.
|Method of recrystallizing an amorphous region of a semiconductor
|Apr 12, 2001
|Jun 3, 2003
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|Thermally stable poly-Si/high dielectric constant material interfaces
|Jun 7, 2002
|Oct 14, 2003
|Advanced Micro Devices, Inc.
|Laser thermal annealing of high-k gate oxide layers
|Aug 31, 2001
|Dec 9, 2003
|Asm International, Nv.
|Methods for making a dielectric stack in an integrated circuit
|Oct 5, 2000
|Jan 20, 2004
|Hoya Corporation
|Metal oxide pattern forming method
|Jan 25, 2002
|Mar 30, 2004
|Aviza Technology, Inc.
|Multilayer high κ dielectric films
|Mar 9, 2001
|Aug 31, 2004
|Kabushiki Kaisha Toshiba
|Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
|Apr 20, 2000
|Jan 10, 2006
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|Precursor source mixtures
|Jun 24, 2003
|May 23, 2006
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|Lanthanide oxide / hafnium oxide dielectrics
|Jun 30, 1998
|Aug 16, 2001
|Gang Bai
|Multi-layer gate dielectric
|May 9, 2001
|Sep 13, 2001
|Wilk Glen D.
|Method to form silicates as high dielectric constant materials
|Mar 9, 2001
|Sep 20, 2001
|Yoshitaka Tsunashima
|Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
|Dec 4, 2000
|Sep 27, 2001
|Nicolas Nagel
|Microelectronic structure and method of fabricating it
|Jun 16, 1999
|Jan 17, 2002
|Kang Sang-Bum
|Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same
|Apr 18, 2001
|Apr 25, 2002
|Mitsubishi Denki Kabushiki Kaisha
|Semiconductor device and manufacturing method thereof
|May 26, 2000
|Apr 25, 2002
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|Method and apparatus for forming a semiconductor device utilizing a low temperature process
|Jan 5, 2001
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|Low leakage current metal oxide-nitrides and method of fabricating same
|Jan 16, 2001
|Jul 18, 2002
|International Business Machines Corporation
|Mos device having a passivated semiconductor-dielectric interface
|Feb 1, 2001
|Aug 1, 2002
|Muller David A.
|Silicon oxide based gate dielectric layer
|Feb 2, 2001
|Aug 8, 2002
|Jongho Lee
|Dielectric layer for semiconductor device and method of manufacturing the same
|Feb 5, 2001
|Oct 10, 2002
|International Business Machines Corporation
|Method for forming dielectric stack without interfacial layer
|Mar 30, 2001
|Nov 28, 2002
|Advanced Technology Materials Inc.
|Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
|Jun 13, 2001
|Dec 19, 2002
|International Business Machines Corporation
|Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
|Mar 28, 2001
|Feb 6, 2003
|Hsu Sheng Teng
|Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same
|Sep 2, 2003
|Mar 4, 2004
|Haukka Suvi P.
|Methods for making a dielectric stack in an integrated circuit
|Aug 26, 2005
|Jan 12, 2006
|Micron Technology Inc.
|Capacitors having doped aluminum oxide dielectrics
|Albert Chin et al., "High Quality La2O3 and AI2O3 Gate Dielectric with Equivalent Oxide Thickness 5-10A," 2 pages, (2000).
|B. Cheng et al., "The Impact of High-K Gate Dielectrics and Metal Gate Electrodes on Sub-100 nm MOSFET's," p. 1537-1544, (1999).
|B.H. Lee et al., "Ultrathin Hafnium Oxide with Low Leakage and Excellent Reliability for Alternative Gate Dielectric Application," 4 pages, (1999).
|C.T. Liu, "Circuit Requirement and Integration Challenges of Thin Gate Dielectrics for Ultra Small MOSFETs," 4 pages, (1998).
|D.A. Muller et al., "The Electronic Structure at the Atomic Scale of Ultrathin Gate Oxides," 4 pages, (1999).
|H.F. Luan et al., "High Quality Ta2O5 Gate Dielectric with Tax,eq <A," 4 pages, (1999).
|K.J. Hubbarda) et al., "Thermodynamic Stability of Binary Oxides in Contact with Silicon," p. 2757-2776, (1996).
|S.P. Murarka et al., "Thermal Oxidation of Hafnium Silicide Films on Silicon," 3 pages, (1980).
|W.-H. Lee et al., "A Novel High-k Inter-Poly Dielectric (IPD), A12O3 for Low Voltage/High speed Flash Memories: Erasing in msecs at 3.3V," p. 117-118, (1997).
|Xin Guo et al., "High Quality Ultra-thin (1.5 nm) TiO2/Si3N4 Gate Dielectric for Deep Sub-micron CMOS technology," 4 pages, ( 1999).
|Y. Saito et al, "High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma," 2 pages, (1999).
|Ying Shi et al., "Tunneling Leakage Current in Ultrathin (<4nm) Nitride/Oxide Stack Dielectrics," 3 pages (1998).
|Citing Patent
|Filing date
|Publication date
|May 9, 2006
|Feb 1, 2011
|Intel Corporation
|Thin transition layer between a group III-V substrate and a high-k gate dielectric layer
|Sep 10, 2012
|Jan 7, 2014
|Dainippon Screen Mfg. Co., Ltd.
|Heat treatment method for promoting crystallization of high dielectric constant film
|May 9, 2006
|Nov 15, 2007
|Willy Rachmady
|Thin transition layer between a group iii-v substrate and a high-k gate dielectric layer
|Sep 10, 2012
|Mar 28, 2013
|Kazuhiko Fuse
|Heat treatment method for promoting crystallization of high dielectric constant film
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|May 16, 2012
|Fee payment
Year of fee payment: 4
|May 12, 2016
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN
Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001
Effective date: 20160426
|Jun 2, 2016
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL
Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001
Effective date: 20160426
|Jun 2, 2016
|Fee payment
Year of fee payment: 8
|Jun 8, 2017
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN
Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001
Effective date: 20160426


text:
EVGA/GSI Media, Disney
EVGA/GSI Media, Disney
Oh, to be Amy Adams!
Not only was the wonderful actress nominated for an Oscar this year, but she also recently worked with Kristen Stewart and Garrett Hedlund in On The Road.
And now...
She's about to hit theaters in The Muppets while still filming the new Superman flick. Yeah, she's Lois Lane.
"It's amazing," Adams told me on the red green carpet at the Muppets premiere in Hollywood. "Between the Muppets and doing Man of Steel, I'm living every childhood fantasy I've ever had."
And guess who's got a little crush on the newest character to join Kermit the Frog, Miss Piggy and the rest of the gang? Adams' 19-month-old daughter Aviana!
"She hasn't seen the movie yet, but she's met the Muppets," Adams smiled. "She's obsessed with Walter."
She laughed about a possible love connection, "Well, you know, they are about the same size."
Adams, like everyone else I spoke to from the movie, won't talk sequel...yet.
"I don't like to jinx anything so let's get through this for now and get people to fall in love with the Muppets again," she said.
Jason Segel, who cowrote, produced and costars in the movie, said, "I'm very superstitious, so I want to see how it goes but my goal was to set the stage for the Muppets to come back in a very big way.
"My dream when I was a kid was to do like a cameo in a Muppets movie," the How I Met Your Mother funnyman added. "The idea of writing it and producing it is just unreal and I feel very lucky to be here."


text:
TVGA sold, keeping operations in Buffalo
TVGA Consultants, a Buffalo-based architecture, engineering and land survey firm with nearly a century of history, has been sold to an Atlanta-based firm.
The buyer is KHEOPS Architecture, Engineering and Survey, a sister company of KHAFRA Engineering Consultants, which is headquartered in Atlanta. KHAFRA has eight regional offices around the country. KHEOPS was established to provide services in New York State.
The two firms completed the deal Nov. 26. The terms were not disclosed.
"Together, we can service clients more completely with added expertise and experience," said Valentino Bates, president of KHEOPS. The firm said it began discussions with TVGA about a deal in 2011.
TVGA has adopted the KHEOPS name, and the firm's customers will have access to a wider variety of professional services as a result of the deal, said Jill Sawyer, marketing director.
TVGA traces its roots to 1917, to a firm founded in Buffalo under the name Cudall, Powell and Mosher. Over the decades, its name and partners changed, and acquisitions were made. TVGA built a new corporate office in Elma in 1995, then moved back to downtown Buffalo, on Main Street, in 2011.
KHEOPS is now based at 300 Pearl St. Twenty-eight of TVGA's 30 employees were retained, and Edward Schiller, who was TVGA's president, is now the KHEOPS regional manager of New York.
email: email@example.com


text:
Is Topiramate Effective in Treating Dizziness in Patient's With Migraine-Associated Dizziness
This study has been withdrawn prior to enrollment.
(No subjects enrolled)
University of California, San Francisco
ClinicalTrials.gov Identifier:
First Posted: August 11, 2008
Last Update Posted: March 6, 2015
American Academy of Otolaryngology-Head and Neck Surgery Foundation
Information provided by:
University of California, San Francisco
- Full Text View
- Tabular View
- No Study Results Posted
- Disclaimer
- How to Read a Study Record
No Study Results Posted on ClinicalTrials.gov for this Study
Study was withdrawn before participants were enrolled.
|Study Status:
|This study has been withdrawn prior to enrollment.
|Study Completion Date:
|No date given
|Estimated Primary Completion Date:
|August 2011 (Final data collection date for primary outcome measure)


text:
Debunking the false "anti-Semitism" slur
By Nureddin Sabir
Editor, Redress Information & Analysis
Blake Alcott* debunks the "anti-Semitism" slur levelled at musician and writer Gilad Atzmon by US academic Ali Abunimah, and explains that Atzmon "illuminates the 'pro-Semitic' racist ideology fatal to Palestinians".
Disavow Gilad Atzmon, or bury the hatchet?
*Blake Alcott is an ecological economist.


text:
FILED: April 8, 2009
Eastern Oregon Correctional Institution,
Marion County Circuit Court
Dennis J. Graves, Judge.
Argued and submitted on June 23, 2008.
Patrick M. Ebbett argued the cause for appellant.Ā With him on the brief was Chilton, Ebbett & Galli, LLC.
Carolyn Alexander, Assistant Attorney General, argued the cause for respondent.Ā With her on the brief were Hardy Myers, Attorney General, and Mary H. Williams, Solicitor General.
Before Sercombe, Presiding Judge, and Brewer, Chief Judge, and Riggs, Senior Judge.
Petitioner appeals from a judgment dismissing his petition for post-conviction relief.Ā ORS 138.530; ORS 138.510(3).Ā Petitioner claims that the post-conviction relief court erred in dismissing his claim that the criminal trial court imposed unconstitutional sentences under Apprendi v. New Jersey, 530 US 466, 120 S Ct 2348, 147 L Ed 2d 435 (2000).Ā We review the post- conviction court's judgment for errors of law and for evidence to support its findings, Stroup v. Hill, 196 Or App 565, 568, 103 P3d 1157 (2004), rev den, 338 Or 432 (2005), and affirm.
The relevant facts are as follows.Ā Petitioner was convicted, following a jury trial in 1996, of racketeering, unlawful use of a weapon, first-degree assault, attempted murder, and three counts of felon in possession of a firearm.Ā The trial court imposed a 396-month sentence on the racketeering conviction, a 130-month sentence and a 30-year dangerous offender sentence on the first-degree assault conviction, 48-month departure sentences on each of the two felon in possession convictions, and six-month sentences on the third felon in possession and the unlawful use of a weapon convictions.Ā The trial court ordered all other sentences to be served concurrently to the racketeering sentence, but consecutive to each other.Ā
Petitioner appealed, and this court reversed the racketeering conviction and remanded for resentencing.Ā State v. Harris, 157 Or App 119, 967 P2d 909 (1998).Ā On remand, the trial court dismissed the racketeering charge and imposed the same sentences on the remaining counts.Ā Petitioner appealed from the amended judgment.Ā The United States Supreme Court decided Apprendi after entry of the amended judgment and before the appeal was briefed.Ā One of petitioner's assignments of error in the appeal was that the trial court erred in not granting his motion for a new sentence in light of Apprendi.Ā This court affirmed the trial court's judgment without issuing an opinion on February 27, 2002, and the Oregon Supreme Court denied review.Ā State v. Harris, 179 Or App 742, 42 P3d 950, rev den, 334 Or 411 (2002).Ā
Petitioner sought post-conviction relief.Ā ORS 138.510 - 138.686.Ā Petitioner's fifth amended petition alleged that, under the reasoning of Apprendi and Blakely v. Washington, 542 US 296, 124 S Ct 2531, 159 L Ed 2d 403 (2004), the criminal trial court unconstitutionally imposed upward departure and dangerous offender sentences at the time of the resentencing and that his criminal trial and appellate counsel were inadequate. ĀORS 138.530(1)(a), (c).Ā The post-conviction court denied relief.
On appeal, petitioner argues that the trial court erred in concluding that his claims were barred under Palmer v. State of Oregon, 318 Or 352, 867 P2d 1368 (1994), and in not applying Apprendi and Blakely to his dangerous offender and departure sentences.Ā Petitioner argues that he could not reasonably have been expected to raise an Apprendi-based challenge at either his initial sentencing in 1996 or at resentencing in 1999 before Apprendi was decided in 2000.Ā Finally, petitioner concedes that Miller v. Lampert, 340 Or 1, 125 P3d 1260 (2006), holds that the rule announced in Apprendi and applied in Blakely is not retroactive to cases on collateral review, but asks that Miller be overruled.Ā That we cannot do.Ā The principles announced by the Court in Apprendi and Blakely do not apply retroactively in a collateral proceeding such as this one, and counsel's failure to anticipate Apprendi's holding does not constitute inadequate assistance of counsel.Ā Miller, 340 Or at 16-17; Page v. Palmateer, 336 Or 379, 84 P3d 133 (2004); see also Schriro v. Summerlin, 542 US 348, 124 S Ct 2519, 159 L Ed 2d 442 (2004) (jury trial right set forth in Apprendi does not apply retroactively in collateral proceedings).Ā
Thus, the post-conviction court was correct in dismissing the petition for post-conviction relief because either the Apprendi claim could have been raised and decided in the direct appeal of the resentencing (and was therefore barred under ORS 138.550(2)) or the Apprendi claim could not have been decided in that appeal but was sought to be applied retroactively in this post-conviction relief proceeding (contrary to Miller).


text:
Below are answers to some of our most frequently asked questions.
|Contact us if you would like more information or have additional questions.
Residential Food Scraps Collection
Household Hazardous Waste
Collection Services - Residential
Collection Services - Commercial/Multi-Unit Complexes
Miscellaneous Questions
Q: Can I recycle shredded paper?
A: Yes. Place your shredded paper in a clear plastic bag, tie it securely and place it in your blue recycling cart. You may also use a paper bag.
Q: How do I dispose of appliances and furniture?
A: Residents are encouraged to donate items that are reusable. If items are not reusable, you can contact GreenWaste at (650) 493-4894 to schedule your annual clean up day.
Q: What can I do with unusable old clothing?
A: Goodwill and Salvation Army accept unusable clothing (e.g., torn, stained clothing). They sell it to a cloth recycler to be made into rags.
Q: Which plastics are accepted for recycling?
A: Most types of plastic, with or without a number, are accepted in your blue recycling cart. This includes bottles, containers, film plastics (e.g., plastic bags, dry cleaning bags and bubble wrap) and rigid plastics (e.g., broken toys, shelving, laundry baskets and container caps/lids). There are some exceptions such as expanded polystyrene (STYROFOAMTM). Additionally, film plastics must be bundled together inside a clear plastic bag.
Q: Why can't I recycle expanded polystyrene (STYROFOAMTM)?
A: Although it is technically possible to recycle expanded polystyrene, there are no viable, cost-effective markets currently available for this material.
Q: Why do I need to bag my film plastics and plastic bags?
A: Loose plastic film and plastic bags get tangled in the sorting equipment at the recycling facility. Placing it in a clear bag makes it easier to spot and pull off the conveyor belt at the beginning of the process.
Q: Do we need to rinse our food containers?
A: No, some remaining food residue in your container is fine. A rule of thumb is if you turn over your container and shake it a bit (opening facing down) and nothing comes out, it's clean enough for your recycling cart.
Q: Can I recycle multi-layer juice boxes/pouches and other aseptic containers?
A: No. If we were to add aseptic containers to the accepted item list for your curbside collection container, Green Waste would have to either separate them out at their sorting facility or they would have to limit their material marketing options. Under the current sorting mechanisms at the Green Waste sorting facility, aseptic containers would end up with mixed paper. Only a few paper mills are capable of recycling them. Therefore, instead of marketing their mixed paper to get the best price, Green Waste would have to go with only those mills capable of recycling aseptic containers. Neither of these options are economically feasible at this time.
What Goes Where - Sorting Related Questions
Kitchen Bucket Care - Logistics in Homes
Compostable Plastic Bags
Green Cart Care
Q: Can I put food scraps in my green cart?
A: Yes! All food scraps should be put in your green cart including bones, meat, dairy, fruit, vegetables, grains, dough, coffee grounds and filters, teabags and other plate scrapings. You can place food scraps and soiled paper loose or bagged with compostable bags in your green cart.
Q: Can I put paper products, including tissues and food and beverage cartons,in my green cart?
A: Yes! Soiled paper products can be put in your green cart including paper towels, napkins, tissues (yes, even your used tissues can be composted), pizza boxes, paper plates and cups, paper take-out containers, food and beverage cartons, and food soiled paper/cardboard packaging. They can be placed directly in your green cart.
Q: Can I put compostable plastic products in my green cart?
A: Yes! You can place compostable plastic products that are clearly labeled 'Compostable' in your green cart. This includes clamshell containers, cups, utensils and bags. Products that are labeled 'Biodegradable' are not accepted because they do not break down fast enough during the composting process.
Q: Can I send my food scraps down the kitchen sink grinder/garbage disposal?
A: We strongly discourage using your kitchen sink grinder/garbage disposal to dispose of your food scraps. Placing your food scraps in the green cart instead of using a kitchen sink grinder/garbage disposal:
Q: Can I pour fats, oil, and grease into my green cart?
A: Only small amounts of leftover oil or grease from household cooking should be placed into the green cart. For appropriate disposal of large quantities of fats, oil, and grease, visit this website.
Q: Is backyard/home composting still a good idea?
A: Absolutely. Backyard composting provides an on-site sustainable solution for many types of food scraps, like fruit and vegetable peelings and ends. Soiled paper such as paper towels, coffee filters, and tea bags are also suitable for home composting. Food scraps that are not appropriate for backyard composting, like meats, cheeses, eggs, oils, and bones, can be placed directly into the green cart. Soiled paper products such as paper takeout containers, paper plates, and used tissues, which are not appropriate for backyard composting, should go into the green cart.
Free home composting workshops are offered by Santa Clara County. Palo Alto residents that attend one of these workshops can receive a free compost bin. Learn more on our Home Composting page.
Q: What happens to the materials I put in my green cart?
A: The compostable material collected in your green cart is taken to the Zero Waste Energy Development Company (ZWED) in San Jose, where it is anaerobic digested and composted. This process yields both renewable energy and compost which is used to enrich the soil.
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Q: How do I get started at home?
A: Each household will receive a kitchen bucket and a brochure containing information about the new program and sorting system. You can keep your kitchen bucket under the sink, on the counter, or even in the freezer – wherever is most convenient for you – to collect any food scraps and soiled paper when you prepare meals and clean up.
Q: Do I need to use the kitchen bucket?
A: No, you do not need to use the kitchen bucket. Paper milk cartons, ice cream cartons, and paper to-go food containers are also great receptacles to collect food scraps temporarily before placing them all into your green cart. Plastic garbage bags or single use plastic bags are not accepted and will contaminate the compost.
Q: How to prevent my kitchen bucket from getting smelly or overridden with fruit flies?
A: Empty your kitchen bucket into your green cart regularly – about every two to three days. Consider lining your kitchen bucket with a compostable bag, wrapping messy food scraps in newspaper or utilizing used paper towels to soak up moisture before placing in the bucket.
You can sprinkle baking soda or spray vinegar inside the bucket to reduce odors. Wash your bucket with soapy water or in your dish washer. You can also place your bucket (or other preferred collection container) in your freezer to avoid food from decomposing before placing the materials into your green cart for collection.
Q: What should I do if I don't need or want the provided kitchen bucket?
A: Contact GreenWaste of Palo Alto at 650-493-4894 to arrange a pickup of the kitchen bucket. There are also other kitchen buckets on the market, you can purchase them at stores or online.
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Q: Can I use compostable plastic bags?
A: Yes! When you are purchasing compostable plastic bags at the stores, look for bags that are clearly labeled "Compostable" or "BPI certified" (Biodegradable Products Institute.)
For a comprehensive list of certified brands and products, visit the BPI's catalog
Q: Where can I purchase compostable plastic bags?
A: Local stores:
The most common compostable bag brands found in local stores include:
BioBag, If You Care, Ucan Untrash, Glad compostable, Bag-to-Nature, and EcoSafe.
These bags are generally available in 3 sizes:
There are a number of local stores selling compostable plastic bags:
Online Options
If you prefer to buy online, many e-commerce websites offer a wide range of certified compostable bag brands in bulk. The local stores listed above may periodically run out of stock of certain brands and sizes, so buying online gives you access to any brand, size, and pack count at any time.
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Q: How do I keep my green cart clean?
A: Here are some tips to keep your green cart clean:
Q: Will the green cart attract animals?
A: Placing food scraps in the green cart is no different than placing food scraps in the black cart as garbage. The green carts are made from a heavy-duty plastic and are designed to remain upright. If you have additional concerns, place the food scraps in compostable bags. The compostable bags will keep the food scraps contained and reduce the odors emitted from the food scraps.
Q: What if I need a larger green cart?
A: If you need a larger green cart to accommodate all of your food scraps, soiled paper and yard trimmings, please call GreenWaste at (650) 493-4894 to schedule a cart exchange.
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Q: When is the next HHW event?
A: Events are held every Saturday from 9am-11am and on the first Friday of each month from 3pm-5pm. The events are held at the Regional Water Quality Control Plant (RWQCP) located at 2501 Embarcadero Way, Palo Alto, CA 94303.
Q: What wastes are accepted at HHW events?
A: Unwanted hazardous household products such as used or expired medication, paints, solvents, fuels, cleaners and pesticides are accepted.
Q: What wastes are NOT accepted at the HHW event?
A: No gas cylinders (camping & BBQ propane tanks are ok); radioactive wastes; wastes containing body tissues or body fluids; controlled substances; electronics; motor oil; antifreeze; car batteries; explosive wastes (marine flares); and ammunition.
Q: How much waste can I drop off at the Household Hazardous Waste (HHW) event?
A: Residents can only transport up to 15 gallons or 125 pounds of household hazardous waste at any time. However, residents can make more than one trip to an event.
Q: Where can I take my household hazardous waste if I am a Palo Alto business?
A: Businesses or non-profit organizations located in Palo Alto, East Palo Alto, Mountain View, Stanford, Los Altos and Los Altos Hills that generate less than 220 pounds of hazardous waste per month can participate in Palo Alto's Conditionally Exempt Small Quantity Generator Program. Please call (800) 433-5060 for more information.
Q: Where can I take my household hazardous waste if I am not a Palo Alto resident?
A: Santa Clara County Household Hazardous Waste Program
Phone: (408) 299-7300
Web site: www.sccgov.org/portal/site/scc (search "household hazardous waste")
Participating Cities: Campbell, Cupertino, Gilroy, Los Altos, Los Altos Hills, Los Gatos, Milpitas, Monte Sereno, Morgan Hill, Mountain View, San Jose, Santa Clara, Saratoga, Stanford University, and Sunnyvale.
San Mateo County Household Hazardous Waste Program
Phone: (650) 372-6263 or (650) 363-4718 (automated number).
Web site: http://events.smhealth.org/events/
Participating Cities: Belmont, Brisbane, Burlingame, Daly City, East Palo Alto, Foster City, Half Moon Bay, Menlo Park, Millbrae, Pacifica, Redwood City, San Bruno, San Carlos, San Mateo, South San Francisco, Atherton, Colma, Hillsborough, Portola Valley, and Woodside.
Q: What if I have more recyclables than will fit in my cart?
A: If you find this occurring regularly, contact GreenWaste Customer Service at (650) 493-4894 to order a larger recycling cart at no additional cost. If this only occurs on occasion, you may place your additional recyclables in a paper bag next to your recycling cart. Additional cardboard should be flattened and cut into pieces no larger than 2'x 3',tied and placed next to your cart.
Q: What if I have more yard trimmings than will fit in one cart?
A: If you find this is occurring regularly, contact GreenWaste Customer Service at (650) 493-4894 to order a larger yard trimmings cart. Up to 3 carts are available to residents for no charge; additional carts will be available for a nominal fee. If this only occurs on occasion, you may place your additional yard trimmings in a biodegradable container, such as 30 gallon Kraft paper bag, cardboard boxes or in bundles (no larger than 2'x 4') next to your wheeled cart. These containers/bundles may not exceed 40 pounds and will not be returned.
Q: Someone is stealing my recyclables. What do I do?
A: Scavenging recyclables at the curb is prohibited by City ordinance. If you see someone other than GreenWaste employees collecting your recyclables, obtain the vehicle's license number and description and report it to the police department
immediately at (650) 329-2413.
Q: What is a "mini-can?"
A: Residents who generate minimal waste may be able to save money by reducing their garbage service level to the 20 gallon mini-can. If you are interested in subscribing for mini-can service, please contact GreenWaste Customer Service at (650) 493-4894.
Q: Why was my garbage not collected?
A: To ensure collection of your garbage, recyclables and yard trimmings, make sure it is set out at curbside the night before, follow the set out instructions in this booklet and make sure lids are closed. Sometimes your garbage may be picked up later due to substitute drivers, traffic or route changes. If your garbage is still not collected by 4 PM on your normal collection day, please contact Customer Service at (650) 493-4894.
Q: How do I start collection services for recyclables and compostables?
A: GreenWaste Environmental Outreach Coordinators (EOCs) can assist you, at no additional cost. Contact GreenWaste Customer Service at (650) 493-4894 to reach an EOC.
Assistance includes:
Q: What types of containers are available for collecting recyclables and compostables, how frequently will they be serviced, and what are the costs?
A: Service for the collection of recyclables and compostables is available in wheeled carts or bins. Service is available multiple times per week. See Collection Services tab of this guide for details. For rate information, visit www.greenwasteofpaloalto.com or contact GreenWaste Customer Service at (650) 493-4894.
Q: Can I combine food scraps and yard trimmings in the same container?
A: Yes, both are compostable. Click here for a detailed list of accepted materials or contact GreenWaste Customer Service at (650) 493-4894. The exception to this rule is Yard Trimmings debris box service where only yard trimmings are allowed.
Q: How can I reduce my garbage bill?
A: Reducing the total volume of materials set out for collection by using the 3Rs (reduce, reuse, recycle/compost) is the best way to reduce your bill.
Q: Someone is stealing my recyclables. What do I do?
A: Scavenging recyclables is prohibited by City ordinance. If someone other than GreenWaste is collecting your recyclables, obtain the vehicle license number and description and contact the Police Department immediately at (650) 329-2413.
Q: What is a Zero Waste Party Pack and how can I borrow one?
A: Zero Waste Party Packs are FREE and available for residents to borrow. Party packs come with complete table settings for 24 people - that's plates, bowls, tumblers, utensils and cloth napkins. Learn more about Zero Waste Party Packs.
You can borrow a party pack from a Zero Waste Block Leader near you. Zero Waste Block Leaders are neighborhood 'experts' available to answer your recycling and reuse questions, supply information on ways to reduce household waste and foster neighborhood waste reduction efforts. Most block leaders have party packs available for you to borrow. If they don't, they'll get you in touch with a block leader who does.
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Are speeding motorists an issue in your neighbourhood? Do you want to help do something about it?
More volunteers are currently being sought for for the Community Speed Watch scheme which already operates in Bedford.
Supported by the Bedforshire and Luton Casualty Partnership, Community Speed Watch enables volunteers to work within their communities to rasie awareness of the dangers of speeding and help control the problems locally.
People who register undertake training run byt Bedfordshire Police covering the use of speed indicator devices and radar guns, conflict resolution and an option for basic first aid.
Chief Inspector Neill Waring from Bedfordshire Police said: "Excessive speed on the roads is one of the most common issues raised by residents across Bedford, and has an impact not only on road safety but on the quality of life of those that endure it.
"Community Speed Watch seeks to promote safer driving in our local communities by educating rather than prosecuting individuals. Data collected is passed to Bedfordshire Police who may undertake further speed checks and result in drivers being prosecuted."
Equipment is delivered by local policing teams, and volunteers then run sessions noting the date, time, colour, make, model and registration number of any vehicle exceeding the speed limit.
Registered keepers of offending vehicles are writtten to by the police, informing them that they were detected exceeding the speed limit and giving the details. Persistent speeders receive a second letter, and if there is a third occasion motorists can expect further action to be taken by the Police.
If you want to get involved email email@example.com or complete the online form at www.drivesafely.org


text: Buy Alan Dunne Photography vouchers for deals on One-Day DSLR Photography Workshop. Dedicated to capturing classical and elegant images at their Dunboyne studio, Alan Dunne Photography put the whole family in focus with stunning portrait. Weddings can be immortalised in photo form for couples, families and friends to cherish forever more, while corporate and school photo services are also offered.


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The beautiful and undisturbed nature, crystal clear water, easy access to other diving and surfing spots and the local myth make this resort island worth visiting.
Link Exchange
Asian & Modern Teak Furniture and Home Accessories
Bali Book Direct Reservations
Sail Boat Bali
Beach House Hotel, Gili Trawagan - This is one of the nicest Hotels on Gili Trawagan in the three North West Gili islands.
Tulamben Resort NE. Bali - This is Bali's first and best Dive Resort located in North East Bali at Tulamben beach and shipwreck.
Bali Cruises - This is one of Bali's best Travel agency and Activity Desks. Especially good for high class villa bookings.
www.balivillas.com - This is Bali's number first and number one Villa Booking service.
Kelayang Cottages, Belitung Island - Great beaches and quite beautiful bays where old fishing villages flourish.


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An FCC study looking into how news stories are chosen and reported has caught the eye of Republican members of the Commerce Committee who fear it may be an attempt to revive the Fairness Doctrine.
The 16 lawmakers told the commission in a letter that by looking into how how editorial decisions are made by local news outlets, the FCC is threatening the First Amendment.
In the letter, Commerce Committee chairman Fred Upton (R-Mich.) and 15 other lawmakers asked the FCC to stop the study saying, "It is wrong, it is unconstitutional, and we urge you to put a stop to this most recent attempt to engage the FCC as the 'news police."
The study, called the "Multi-Market Study of Critical Needs" plans to look at how broadcast, print, radio and internet news stories are selected, prioritized and produced. On its website, the FCC said the study looks at the information needs of the American public, with "special emphasis on vulnerable/disadvantaged populations."
The leaders of the House Energy and Commerce Committee along with every Republican member of the Communications and Technology Subcommittee also wrote, "The First Amendment to the U.S. Constitution is the beacon of freedom that makes the United States unique among the world's nations. We urge you to take immediate steps to suspend this effort and find ways that are consistent with the Communications Act and the Constitution to serve the commission's statutory responsibilities."
The Fairness Doctrine, which required broadcasters to
give equal time to both sides of present controversial issues of public importance in an honest, equitable and balanced way, exposing viewers to a diversity of viewpoints, was officially taken off the books in 2011.


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Songs from around the globe
Under the direction of music teacher, Beverly Pacheco, and accompanied by pianist, Joanne Parker, students at Cushing Community and Lura Libby School performed in their annual holiday concerts on Dec. 18 and 19. This year's concerts paralleled the school's theme, "It's A Small World" and featured songs from around the globe.
The kindergarten selections included "Feliz Navidad" and "I Have A Little Dreidel." First and second grades sang songs of holiday anticipation, including "Joy" and "A Russian Recipe." Third- and fourth-graders took a singing vacation to the British Isles; among their selections were "Here We Come A-Wassailing" and "Christmas in Killarney."


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Bluepoint Solutions, Catalyst Corporate Partner to Offer Teller Capture and Mobile Deposit
–Agreement expands existing relationship with additional Check 21 capture applications–
Washington, D.C.—Mar. 19, 2012—Bluepoint Solutions and Catalyst Corporate FCU today announced they have expanded their partnership to offer Bluepoint's teller capture and mobile deposit applications to Catalyst Corporate's members, giving them access to Bluepoint's entire suite of Check 21 applications. Bluepoint Solutions provides remote deposit capture, item processing and enterprise content management solutions to credit unions, corporate credit unions and CUSOs nationwide. Catalyst Corporate provides item processing, electronic funds transfers and investment services for more than 1,000 member credit unions nationwide.
Bluepoint and Catalyst have been partners since 2006 providing credit unions solutions for branch capture, remote deposit capture, and electronic cashletter processing. With the expanded partnership, Catalyst will resell teller and mobile capture, in addition to branch, merchant, ATM, and home capture channels. Bluepoint's ImagePoint Teller is available for purchase directly from Catalyst and QwikDeposit ToGo is available integrated with Catalyst's current mobile banking application provided by Malauzai Software.
"Our partnership with Bluepoint Solutions continues to be a strong and successful one. With over 375 of Catalyst's member credit unions currently using Bluepoint's branch capture, demand for additional capture points is significant," said Brad Ganey, chief operating officer of Catalyst Corporate FCU. "Working with Bluepoint, we are able to provide the latest solutions to our member credit unions allowing them to stay competitive in today's crowded financial services market."
Andrew Tilbury, chief marketing officer of Bluepoint Solutions said, "We have a long-standing, successful relationship with Catalyst, and this expansion of our joint product offering will give a greater number of credit unions access to the latest check processing solutions. We are pleased to partner with Catalyst and look forward to the continued growth of our relationship."
About Catalyst Corporate FCU
As one of the nation's largest credit union check processors, Plano, Texas-based Catalyst Corporate Federal Credit Union helps credit unions manage item processing needs and payment services, such as ACH, Remote Deposit and Mobile Banking. And Catalyst Corporate's lines of credit and investment options provide "one-stop efficiency" for credit unions' settlement, excess funds and liquidity needs. For more information, visit www.catalystcorp.org.


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"This is the first time I've had to play myself, and that's hard," says Szostak. "This character speaks like me and dresses like me, not that I dress exactly that way, but it's very similar. I love to play dark characters, and Julie is not a dark character. She is a sweet girl and very straightforward. It was difficult to be myself in those crazy, outrageous situations and at the same time still find love for [Rudd's] Tim. Also, this is a comedy—my first—and [director] Jay [Roach] had me play it straight, which felt conflicting." The film is inspired by Francis Veber's 1998 dark comedy "The Dinner Game."
Growing up in La Celle Saint Cloud, a suburb of Paris, Szostak had no idea what she wanted to do. In France, by the time you're in the 10th grade, you're supposed to decide on a career and then specialize in college. She would have preferred a liberal arts program with "a couple of years to do everything," but the French higher-education system makes no such provisions. In addition, Szostak was a competitive golfer, and there were no sports programs in French colleges. So, at 19, she relocated to the United States, her father's home country, and enrolled at the College of William & Mary in Williamsburg, Va. She ultimately majored in business, believing such a practical course of study would ensure her a steady job in the U.S. She had mastered English, having visited the States many times, though she still speaks with a slight, indefinable foreign accent.
Marketing, Modeling, Acting
Szostak's first step on her journey to acting was moving to New York, where she landed a job in Chanel's marketing department. This position served as a steppingstone to a modeling career when she was asked to pose for the camera for an in-house brochure. The photographer assumed she was a professional model, and Szostak had an epiphany of sorts. "I realized I did not want to be working in an office anymore," she recalls. "It was just not for me, and I figured I could make some money as a model while I tried to figure out what I really wanted to do."
Szostak quit her job and was able to find enough modeling gigs to get by while she explored other options. Her experimental forays included taking "an acting class with Sondra Lee, who was originally from the Actors Studio, and it awakened something in me," Szostak notes. "I knew very quickly I wanted to do this. I didn't know at what level, but I knew this was it. It was a physical thing." Her commitment to acting was further confirmed when for the first time in class, she and a character she was tackling meshed. It was also an artistic turning point: "I felt alive being that person, not playing that person." Szostak employs various relaxation techniques as a way of making herself accessible to each role, she says, adding, "You must let go of everything you've ever learned."
Within short order, Szostak started doing independent films; some were good, others not so good, but they were terrific learning experiences, she points out. One of these independent flicks, "Satellite," in which she had a co-starring role, was shown at the Tribeca Film Festival, and as a result she landed her first agent. Szostak is currently repped by Darren Boghosian of United Talent Agency and managed by Estelle Lasher of Principal Entertainment Talent Management.
During her tenure on the indie film and Off-Broadway circuits, Szostak was able to make ends meet by doing commercials. Szostak also has a home life including two small kids, so family responsibilities always have to be taken into account before she signs on for any project. But she's hopeful "Dinner for Schmucks" will open the doors wide. She'd love to do more plays (though the prospect is "scary"), perhaps an ongoing role in a television series, and be featured in a French film. "I just want to be working and someday be able to choose my own projects," she says. A veteran actor couldn't ask for more.


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Get the number of function-call destinations.
int_T ssGetCallSystemNumFcnCallDestinations(SimStruct *S, int_T elemIdx)
SimStruct that represents an S-Function block
The zero-based element index that is output on the first output port.
Use to determine the number of function-call destinations when a function-call signal is split by a Function-Call Split block.
In this example model, a user-defined S-function block outputs a function-call signal on its first port and queries the number of function-call destinations via its second output port and a call to ssGetCallSustemNumFcnCallDestinations(S, 0). The signal is split by a Function-Call Split block and then calls two function-call destinations: f and h. Output port Out3 correctly outputs 2.
static void mdlOutputs(SimStruct *S, int_T tid) { /* * The second output port outputs the number of blocks * being called to Out3 */ real_T *y = ssGetOutputPortRealSignal(S, 1); int_T numFC = ssGetCallSystemNumFcnCallDestinations(S, 0); y[0] = (real_T)numFC; UNUSED_PARAMETER(tid); /* The first output (function-call port) makes a function-call */ if (!ssCallSystem(S,0)) { /* Error occurred which will be reported by Simulink */ /* Not true, Simulink does not report it*/ } }


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to hellhoundforhire- i have truly enjoyed our exchange of opinions but i think we are far off the original subject and likely boring city paper readers with our babble. just a few last thoughts. first, i vote issues not along party lines. second, i enjoy my current financial status far too much to want socialism. third, i would certainly not vote strictly republican when our republican 'leader' is fighting a war in iraq to protect the financial interests of those 'in bed' with the saudis i.e. the bush family,dick cheney to name a few. this has not been a humanitarian war to rid iraq of its tyrant otherwise we would also be in darfur and other african countries preventing the mass slaughter and attempted genocide of innocent individuals. our republican 'leader' ,who i am positive you support, should be ashamed of himself for turning a blind eye to the plight of these people. how can he claim to be a good christian? somewhat hypocritical i am sure you will agree. these are my final comments to you. i have enjoyed our discussions, look forward to your pointed response. best of luck, dpm
dpm, no doubt this will be an unsatisfactory answer, but I see proof of God everywhere every day. But, back to Jesus(God.) the New Testament is nothing but eyewitness accounts of Jesus's life. From what I've read, the gospels are some of the most undisputed historical documents ever studied. It's that whole rising from the dead, the important part, part that goes against everything you and I have ever known. Anyway, I can make assumptions about you from your posts. I assume that you vote Democrat. Whether you realize it or not, or want to admit, this means you suppourt socialism. I now ask for proof that socialism works. We'd have an easier time proving the existence of God.
to hellhoundforhire- detached from reality?? hmmm.you believe in the existence of a supreme being-god-for which there is aboslutely no evidence to support your belief. call it faith but you still have no proof. there is as much evidence for the existence of santa claus and the easter bunny as there is for a god. the most important and final point i will make is as follows: if a god/gods does/do exist, the greatest gift he/she/they has/have given us is ethnic/racial/cultural and religious diversity. this world would be a better place if we appreciated and respected this diversity.
dpm, you are from the camp that believes people are basically good, and this being America, you have the right to your opinion, no matter how detached from reality it may be. I'll try and explain again. Jesus's message was that he loves us so much, he was going to save us from the fate that we all deserve, by placing the burden on himself.
to hellhoundforhire- ...so jesus' message was that "people are scummy" and "deserve to die". where does it say THAT in the bible? now that is the epitome of compassion. good thing god was around to spare everyone. if this represented jesus' opinion, then no wonder the vast majority of people in this world are non-christian.
dpm, thank you for proving me correct with that post. "Be a good person" was not Jesus's message. His message was even more direct and straightforward. People are so scummy, that we deserve to suffer and die. But because God loves us so much, he sent his son to die in our place. That was Jesus's message. And through God's love, one will want to "be a good person."
to hellhoundforhire- jesus' message was pretty simple..be a good person. how complicated is this and why do so many people make it more complicated. this is also the basic message of islam, budhhism, taoism...etc. get the point.
Congratulations dpm. All you need to know about Jesus, you learned from Air America radio.
John Allen's comment 'i do love people and enjoy hearing the perspectives of others' is interesting. It really appears from his comments that he only appreciates the 'perspectives of others' if they agree with his perspective. He appears to criticize people who come across as non-christians. Hmmm..I thought Jesus preached tolerance of others. I think it is better to understand the messages in the bible than to be able to quote passages. I think the appropriate term for a narrow minded bible thumper is extremist.
Mr.Gupton said "Referring to John Graham Altman as a racist, homophobic fool ("Sugarplums and Lumps of Coal," Views, Dec. 27) reveals just how foolish Moredock himself can be (Matthew 5:22". Obviously the details of Altman's bad behavior haven't made it to Myrtle Beach. John Graham Altman IS a racist, homophobic fool.
In response to No Service,No Smile, it would would seem that if you watch the local news, you would understand why some restaurants would not want to deliver to some areas. It's not what you call and I quote "Fight the racist biogts who hate people" it's call common sense. The Charleston area crime rate is far above the national average in murder,rape,robberies and assaults.Every city from small to large has certain areas in their city that has a high crime rate, that is just the plain facts. If my son or daughter was a delivery person, I would also not allow them to go in certain areas. It is absurd that you would say that parents should teach their children not to be afraid of black people. In my 50+ years, I have never heard of anyone that I know tell their children something like that. Maybe you should contact the local media and tell them to stop reporting the crimes in the Charleston area. Maybe than you can get your pizza delivered. XXXXXXXXX Goose Creek
This person does not remember how one lady came up against the schools and prayer and it effected the country right today. That is why the crime is up higher than it's ever been in centries and children having children is on the rise and I think that the government needs to pray before work if that is what they prefer. Now as of pushing one's religion onto anyone that is not the case. Just prayer is helpful to us as a Nation. Soldiers have been doing it during ever WAR this Nation has encountered into so STOP COMPLAINING AND JUST GET ON YOUR KNEE'S AND PRAY. I fought in this present WAR and GOD so fit to bring me home to my love ones in one piece and a right mind, unlike many of my Comrades that DIED in that country, and there BLOOD is forever stained in the sand of IRAQ. God Bless America, My home, Sweet, Home...
This is in response to the letter from Mark Smith. Question - who are you referring to in this letter? First, there is a distinct shortage of hills in the local area. That's why it is referred to as the Lowcountry, my Yankee friend. Second, I suspect that a large percentage of the CP readership voted no on amendment one. So why are you using antagonistic language toward those who would otherwise be likely to agree with the points you are making? There are decidedly less liberal media outlets to be found than the CP in South Carolina. Would your letter not have been better sent to one of those? You are insulting readers who are every bit as sickened and saddened by this amendment as you yourself are.
Remember, liberals do not believe in good and evil. There is only rich and poor.
I would like to comment on the lady that describe a wonderful young man as a non- aggressive person, who should not be in an adult prison for blowing his grand-parents heads off with a shotgun. I ask myself would she feel the same, if it had been her parents or grand-parents? I think not. weather we want to believe it or not. there are monsters in our world, they come in all ages. i believe that the punishment should fit the crime regardless of the crime or the age of the criminals age. theres no one in this country 14 years old that doesn't know that its wrong to take a gun and kill another person. society has created these monsters and society should be helt responsible in destorying them. the weak judges that took parenting out of the home are the same ones to weak to put these monsters to death. why? they created them. Remember the victums. They had the right to grow old and die of old age.
I am sorry but I disagree..the issue with children today is really very simple...it is PERSONAL ACCOUNTABILITY. If I took a candy bar from a store, then I knew very quickly...I was held accountable, took it back, apologized, paid for it and then dealt with when I got home. Today, the child is "disadvantaged or underpriviledged". It's everyone else's fault. That is Baloney. The parents are accountable..the kids need to be held accountable. period. No one is perfect, no child is perfect, but they must learn from mistakes. If you lie, cheat or steal, you are accountable.
Yas....Sistuh, you spick de truth,sho-nuf! Dat mayor BossHawg a real buttah ball and hard to fuguh, nowatImeen? Ahs wondah if the REEL keyin done is to de face O peeple who don't be allowed to show de SCRATCH in public. eh? Yeah Man! DAT be a fo_REEL SCRATCH!
Mr. Stockton, I agree with your grammatical corrections, however, do not correct someone else's grammar when you yourself cannot write a paragraph that is consistently within the same tense.