text:
Top Items:
Greek MPs pass austerity plan amid violent protests — The BBC's Mark Lowen: "It was some of the worst violence Athens had seen for months" — Greece's parliament has passed a controversial package of austerity measures, demanded by the eurozone and IMF in return for a 130bn-euro ($170bn; £110bn) bailout to avoid default.
Discussion: naked capitalism and Suburban Guerrilla
Lambert Strether / naked capitalism: The killing of Greece
New York Times:
Greek Parliament Passes Austerity Plan as Riots Rage — ATHENS — After violent protests left dozens of buildings aflame in Athens, the Greek Parliament voted early on Monday to approve a package of harsh austerity measures demanded by the country's foreign lenders in exchange for new loans to keep Greece from defaulting on its debt.
Discussion: Mish's Global Economic …, Guardian, THE ASTUTE BLOGGERS, Runnin' Scared and The Raw Story
Mike Mish Shedlock / Mish's Global Economic …: Total Chaos; Riots Rage; Athens Resembles War Zone
Reliapundit / THE ASTUTE BLOGGERS: GREEK PARLIAMENT PASSES AUSTERITY CUTS; NOW, WILL THE EU STEP BACK AND AGREE IT'S ENOUGH?
Esther Zuckerman / Runnin' Scared: Riots Erupt in Greece Over Austerity
Greek lawmakers pass austerity bill as Athens burns — (Reuters) - Greece's parliament approved a deeply unpopular austerity bill Monday to secure a second EU/IMF bailout and avoid national bankruptcy, as buildings burned across central Athens and violence spread around the country.
Discussion: Power Line and The Raw Story
John Hinderaker / Power Line: Athens In Flames — Athens is burning tonight, as leftists …
Sahil Kapur / tpmdc.talkingpointsmemo.com:
TPMDC — McConnell: GOP Will Fight To Let ANY Employer Deny Birth Control Coverage — Not satisfied with President Obama's new religious accommodation, Republicans will move forward with legislation by Sen. Roy Blunt (R-MO) that permits any employer to deny birth control coverage …
Attaturk / Firedoglake: The have nots must have less
Sam Baker / The Hill: Poll: Catholics support new contraception policy
Jonathan Cohn / The New Republic: This Isn't About Freedom of Religion Anymore
Laura Clawson / Daily Kos: Senate Republicans push to let any employer deny coverage for any health service on 'moral' grounds
J. Bradford DeLong / Brad DeLong: Twitterstorm delong: February 12, 2012
Leigh Ann Caldwell / CBS News: McConnell: Contraceptive issue "will not go away"
Mustang Bobby / Bark Bark Woof Woof: Who's Left?
John Cole / Balloon Juice: Stupid Is as Stupid Does — They are really going to wage a war on contraception:
Joe Gandelman / The Moderate Voice: Danger Zone For GOP: Poll Finds 52% Say GOP Agenda In Congress Is Extreme
Mark Kleiman / The Reality-Based Community: "All in" — Hard to believe, but Republicans in both the Senate …
Paul Krugman / New York Times:
Severe Conservative Syndrome — Mitt Romney has a gift for words — self-destructive words. On Friday he did it again, telling the Conservative Political Action Conference that he was a "severely conservative governor." — As Molly Ball of The Atlantic pointed out, Mr. Romney "described conservatism as if it were a disease."
Josh Lederman / Ballot Box:
Rep. Ron Paul not conceding Maine vote — Rep. Ron Paul is not conceding the GOP's Maine caucuses, which state party officials and major networks called Saturday for rival Mitt Romney. — With 84 percent of precincts reporting, Romney has 39 percent to Paul's 36 percent …
Discussion: The Raw Story and Blue Mass Group
Josh Lederman / The Hill:
Santorum suggests Romney may have rigged CPAC poll
Santorum suggests Romney may have rigged CPAC poll
Maggie Haberman / Politico: Santorum makes use of 'severely conservative'
Ron Chusid / Liberal Values: Romney Wins on Saturday-Barely
Libby Spencer / The Impolitic: Santorum and Ron Paul cry foul
Joe Gandelman / The Moderate Voice: Department of Sour Grapes: Santorum Suggests Romney Rigged CPAC Poll
Jamie Klatell / Ballot Box: Romney wins Maine caucuses
Glenn Thrush / Politico:
Santorum suggests Romney rigged CPAC vote
Santorum suggests Romney rigged CPAC vote
Discussion: American Spectator and Outside the Beltway
W. James Antle, III / American Spectator: Weekend Political Wrap-Up
Doug Mataconis / Outside the Beltway: Santorum: Romney May Have Rigged CPAC Vote
Tucker Carlson / The Daily Caller:
Inside Media Matters: Sources, memos reveal erratic behavior, close coordination with White House and news organizations — This is the first in a Daily Caller investigative series on Media Matters For America. Daily Caller reporters Alex Pappas and Will Rahn contributed to this report.
Discussion: Atlas Shrugs, FishbowlDC and TBogg
Pamela Geller / Atlas Shrugs: Media Matters War on America Exposed: Madness, White House Collusion, Media Coordination and Cooperation
Betsy Rothstein / FishbowlDC: Incest Desk: Daily Caller's Tucker Carlson Uncovers Media Matters in Bed With White House, MSNBC and Certain Scribes
Trip Gabriel / New York Times:
Gingrich Money Hunt Faces Obstacles — Newt Gingrich recently joined Gov. Rick Perry of Texas on a conference call with more than 50 "bundlers" who had powered Mr. Perry's formidable campaign-cash machine. — Mr. Perry asked his top financial rainmakers to raise money for Mr. Gingrich …
Discussion: Alan Colmes' Liberaland, The Page, Bark Bark Woof Woof and The Caucus
Mark Halperin / The Page: California Cash — NYT: Gingrich heads West in search of money …
Jeff Zeleny / The Caucus: Palin Says Brokered Convention Would Not Hurt G.O.P.
Charles Johnson / Little Green Footballs:
Fox News Commenters Respond to Whitney Houston's Death With Deluge of Hatred and Racism — I don't even know what to say about this any more. There's a real sickness running rampant in the right wing; the Fox News comment thread on Whitney Houston's death is yet another disgusting deluge …
Discussion: Towleroad News #gay
Brandon K. Thorp / Towleroad News #gay: Athens Burns, FOX Fans Discuss Whitney, Starry Night Comes Alive
Fox News:
Singer Whitney Houston dies at 48
Singer Whitney Houston dies at 48
Discussion: The Other McCain
Robert Stacy McCain / The Other McCain: An Idiot Obsessed With Commenters
John Bresnahan / Politico:
Ethics issues tarnish congressional image — The 112th Congress is the most unpopular ever, but is it the most corrupt? — The dire headlines about bad behavior by members of Congress are everywhere: At least a dozen House members are under investigation for ethical or potential criminal charges …
Discussion: The Page
Mark Halperin / The Page: Ethics Issue — At least a dozen members of Congress …
John Hinderaker / Power Line:
Cronyism 101 — I wrote about my participation in the Koch brothers' semi-annual seminar in Palm Springs two weekends ago here. Along with Peter Schweizer, I did a presentation on cronyism. My speech focused on corporate cronyism, while Peter's centered on the sort of political cronyism …
'This Week' Transcript: Jack Lew, Paul Ryan and Rick Santorum — Republican Presidential Candidate Rick Santorum on "This Week" (ABC News) — STEPHANOPOULOS: Good morning, everyone. Many of you have been following that breaking news overnight that the singer, Whitney Houston, died yesterday in Los Angeles.
Discussion: Althouse and Washington Post
Leigh Ann Caldwell / CBS News:
W.H. official: Contraceptive rule stands
W.H. official: Contraceptive rule stands
Discussion: CNS Blog, US Politics, Brilliant at Breakfast and Washington Wire
John Aravosis / US Politics: President digs in on contraceptive rule, won't change policy to appease Catholic bishops
Jared A. Favole / Washington Wire: White House: No More Compromise on Contraception


text: The unemployment rate fell to 7.8% in September. Whats your take on this? http://finance.yahoo.com/news/multimedia-release-two-global-hawk-192849572.html Bottom right of page. Current numbers: It assures President Obama's re-election (8604) 9% It's proof the economy is improving (21280) 22% It's temporary, the worst isn't over (11403) 12% I don't trust the numbers (55030) 57%

subset: commoncrawl


text:
Letters to the editor can be sent by e-mail. They must include the writer's name (no initials) along with a mailing address and daytime phone number for verification purposes. All letters are subject to editing for brevity and clarity. Preference will be given to letters less than 200 words.
Her wake-up call to be an American came on Sept. 11
I will be 30 soon and began examining my life. On Sept. 11, not only did I examine myself, but my patriotism -- which I did not think existed.
I have never voted and do not follow politics. As an American, I tended to take things like democracy for granted. On Sept. 11, I was hurt, outraged and in pain for my fellow Americans. I was also scared and sorrowful.I felt a kinship with those who watched in shock and horror as their world came tumbling down. And I felt as though my world was tumbling down, too.
How was I going to explain to my 7-year-old that America, one of the greatest countries in the world, had people who hated us simply because we are American? How could I explain why I was crying watching firemen and policemen trying to free people from the rubble?
How could I explain why a few tears became a torrent when a reporter relayed a message to the wife of a fire chief that he was OK, but the rest of his men did not make it?
How could I not care how our government works, how we protect ourselves or how our economic system works and how it effects me as an American and a consumer? Why did it take a tragedy of such magnitude to wake me up?
I am not the only American who became aware of being American on Sept. 11. There are others around the country who suddenly realized the horror wasn't happening to someone else -- it was happening to us, the United States.
Americans are volunteering for hours without asking what they will get in return. Others give blood, then ask what else they can do. And still many more have gone to church, regardless of religion, and prayed for those who died and for solace for their families.
I have never had to face such a tragedy. My life has been relatively easy and the deaths I have had to deal with have been shocking, yet not completely unexpected. Sept. 11 opened my eyes and made me see that people in our country were dying simply because they were Americans.
I regret that I haven't cared enough to appreciate being American, not knowing that it is not a right, but a privilege, to live in a country where freedom is a way of life, where prosperity is attainable, and where it is our choice how we live our life.
I am proud to be an American.
America is not symbols and material things. It is the people who stand together, regardless of color or nationality and prove that the United States is made by the people, for the people and from the love of the people.
Tybee Island
Take care of Iraq first, then go after bin Laden
America's world completely changed on Dec. 7, 1941, a date that President Roosevelt quite appropriately said would "live in infamy." The legacy of infamy for which Sept. 11, 2001, will be remembered is far worse.
In 1941, we at least immediately knew who the enemy was. It took four and a half bloody years to reduce the war-making capabilities and economies of Japan, Germany and Italy to rubble, but not one of the three has given the world any further trouble.
Most Americans have forgotten that the United States was engaged in a low-intensity war with Germany for many months before Pearl Harbor. There is an obvious parallel between Germany in 1941 and Iraq today.
Iraq has been firing on our planes almost continuously since the so-called end of the Gulf War, just as the Germans were firing on our ships in the fall of 1941.
One of the more obvious moves that President Bush should make -- even before going after bin Laden -- is a massive air strike on Iraq to completely eliminate not only its air-defense capability, but its command and control system and its capabilities for producing weapons of mass destruction.Both Presidents Clinton and Bush have been reluctant to effectively fight the low-intensity war being waged against us by Saddam Hussein because Iraq supplies so much of the world's oil.
If Iraqi oil must be cut off, so be it; it will take time, but we have the ability to replace much of the lost Iraqi oil from fields in the eastern Gulf of Mexico and Alaska, currently off-limits in the name of environmentalism.
We have every expectation that the American people will come together just as they did in 1941, and that those who govern us will put their petty differences aside.
We have every expectation that Congress will immediately stop bickering about the accounting treatment of the budget surplus and appropriate whatever funds are necessary to wage all-out war against the perpetrators of this gross atrocity against all of civilization and the nations from whence they originated.
Clean up neighborhood in memory of those lost
The world is our neighborhood, the United States of America is our home and its citizens are our family. We went to bed with the doors unlocked and an enemy walked in and killed some of our family. What will we do?
Our sense of security will never be the same, so now we will not only lock the doors, but we will also buy a stronger lock.
Can we replace those we have lost? No, we can only honor their memory. Will we stand idly by while those who have murdered our family mock us and celebrate and spew more threats our way?
We must unite and honor the memory of those lost by purging the world of terrorist groups and governments.
If we do not, then the American lives lost are nothing more than the first of many helpless victims -- fuel for the fires of madmen's hate.
And these are madmen willing to give their lives for their ideology.
Are we willing to give ours for our freedom?
The cost of our mission will be high, and more innocent lives will be lost in the process. Some will lose the stomach to fight, but only if they forget the images of the past week.
Locking the door is great, but true security will only come when we clean up the neighborhood.
Richmond Hill
Tragedy accomplished unification of Americans
As others, I have made valiant attempts to come to grips with the tragic events of Sept. 11.
While no reasonable answer can ever be given for such unparalleled events in the recent domestic history of our country, perhaps, even now, there is some evidence that those who died did not do so in vain.
Already we are seeing the vast divide of America's citizens, so evident during the presidential elections, come together. The scene of congressmen of both parties assembled and singing "God Bless America," of iron workers and thousands of volunteers working tirelessly to free possible trapped survivors, cancellation of major sporting events, untold thousands flocking to churches and synagogues and the many stories of courage and love in the face of death and destruction send a message of a uniting country.
If there is anything prophetic in two planes from two carriers with two names crashing into two buildings, it is the two names of those carriers carrying great significance -- "Americans united."
The events of "9-11" are indeed an emergency call to us all, to love and unite and become again, one nation under God.
Bring troops home to protect nation's borders
How many acts of terrorism must occur before our government realizes that our porous borders must be sealed and secured to protect our citizens and to preserve our national sovereignty?
We must demand the immediate deployment of our armed forces along our borders in sufficient strength to accomplish that urgent mission.
We must also demand that all our military forces currently entangled in Bosnia, and in other unconstitutional missions around the world, be recalled to protect this country.
It is folly for the United States to engage our military might in the protracted and fruitless attempt to police the world at the expense of the safety and security of our citizens.
Savannah Morning News © 2017. All Rights Reserved. Contact Us | Privacy Policy


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Tagged with " festival"
Burning Man 2013: Cargo Cult
The G-rated photos
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text:
|N�mero de publicaci�n
|Tipo de publicaci�n
|N�mero de solicitud
|Fecha de publicaci�n
|14 Jul 2009
|Fecha de presentaci�n
|22 Mar 2005
|Fecha de prioridad
|11 Feb 1998
|Tambi�n publicado como
|N�mero de publicaci�n
|David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
|Cesionario original
|Applied Materials, Inc.
|Exportar cita
|BiBTeX, EndNote, RefMan
|Citas de patentes (111), Otras citas (25), Citada por (18), Clasificaciones (45), Eventos legales (3)
|Enlaces externos: USPTO, Cesi�n de USPTO, Espacenet
This application is a continuation of U.S. patent application Ser. No. 10/647,959, filed Aug. 26, 2003, now U.S. Pat. No. 6,869,896, which is a continuation of U.S. patent application Ser. No. 10/229,992, filed on Aug. 27, 2002, now U.S. Pat. No. 6,734,115, which is a continuation of U.S. patent application Ser. No. 09/594,186, filed on Jun. 13, 2000, now issued as U.S. Pat. No. 6,562,690, which is a continuation of U.S. patent application Ser. No. 09/185,555, filed on Nov. 4, 1998, now issued as U.S. Pat. No. 6,303,523, which was a continuation-in-part of U.S. patent application Ser. No. 09/021,788, filed on Feb. 11, 1998, now issued as U.S. Pat. No. 6,054,379, a continuation-in-part of U.S. patent application Ser. No. 09/114,682, filed on Jul. 13, 1998, now issued as U.S. Pat. No. 6,072,227, and a continuation-in-part of U.S. patent application Ser. No. 09/162,915, filed on Sep. 29, 1998, now issued as U.S. Pat. No. 6,287,990.
1. Field of the Invention
The present invention relates to the fabrication of integrated circuits. More particularly, the invention relates to a process and apparatus for depositing dielectric layers on a substrate.
2. Background of the Invention
One of the primary steps in the fabrication of modern semiconductor devices is the formation of metal and dielectric films on a substrate by chemical reaction of gases. Such deposition processes are referred to as chemical vapor deposition or CVD. Conventional thermal CVD processes supply reactive gases to the substrate surface where heat-induced chemical reactions take place to produce a desired film. The high temperatures at which some thermal CVD processes operate can damage device structures having layers previously formed on the substrate. A preferred method of depositing metal and dielectric films at relatively low temperatures is plasma-enhanced CVD (PECVD) techniques such as described in U.S. Pat. No. 5,362,526, entitled "Plasma-Enhanced CVD Process Using TEOS for Depositing Silicon Oxide", which is incorporated by reference herein. Plasma-enhanced CVD techniques promote excitation and/or disassociation of the reactant gases by the application of radio frequency (RF) energy to a reaction zone near the substrate surface, thereby creating a plasma of highly reactive species. The high reactivity of the released species reduces the energy required for a chemical reaction to take place, and thus lowers the required temperature for such PECVD processes.
Semiconductor device geometries have dramatically decreased in size since such devices were first introduced several decades ago. Since then, integrated circuits have generally followed the two year/half-size rule (often called Moore's Law), which means that the number of devices that will fit on a chip doubles every two years. Today's fabrication plants are routinely producing devices having 0.35 μm and even 0.18 μm feature sizes, and tomorrow's plants soon will be producing devices having even smaller geometries.
In order to further reduce the size of devices on integrated circuits, it has become necessary to use conductive materials having low resistivity and insulators having low k (dielectric constant <4.0) to reduce the capacitive coupling between adjacent metal lines. Liner/barrier layers have been used between the conductive materials and the insulators to prevent diffusion of byproducts such as moisture onto the conductive material as described in International Publication Number WO 94/01885. For example, moisture that can be generated during formation of a low k insulator readily diffuses to the surface of the conductive metal and increases the resistivity of the conductive metal surface. A barrier/liner layer formed from conventional silicon oxide or silicon nitride materials can block the diffusion of the byproducts. However, the barrier/liner layers typically have dielectric constants that are significantly greater than 4.0, and the high dielectric constants result in a combined insulator that does not significantly reduce the dielectric constant.
As shown in
As devices get smaller, liner layers and cap layers having high dielectric constants contribute more to the overall dielectric constant of a multi-component dielectric layer. Furthermore, known low k dielectric materials generally have low oxide content which makes the material inadequate as an etch stop layer during etching of vias and/or interconnects. Silicon nitride has been the etch stop material of choice for making interconnect lines in low k dielectric materials. However, the silicon nitride has a relatively high dielectric constant (dielectric constant of about 7) compared to the surrounding low k dielectric layers. It has also been discovered that the silicon nitride may significantly increase the capacitive coupling between interconnect lines, even when an otherwise low k dielectric material is used as the primary insulator. This may lead to crosstalk and/or resistance-capacitance (RC) delay that degrades the overall performance of the device. Thus, the silicon nitride etch stop layers are typically removed after etching of the underlying dielectric layers.
Ideally, a low k dielectric layer having both good barrier properties for use as a liner layer and sufficient oxide content for use as an etch stop could be identified and deposited in the same chambers as existing low k dielectric materials. Such barrier layers would not increase the overall dielectric constant of the dielectric layers, and such an etch stop layer would not have to be removed after etching the underlying layers.
U.S. Pat. No. 5,554,570 describes barrier layers for use with thermal CVD silicon oxides wherein an organosilane having a C—H group is oxidized instead of silane to increase the density of deposited films and to improve adhesion between the layers. For example, a thermal CVD layer produced from tetraethoxysilane (TEOS) and ozone, may be deposited between PECVD silicon oxide films produced from an organosilicon and N2O or O2.
The barrier layers described in the '570 patent are preferably dense silicon oxide layers having low carbon contents. The dense layers are deposited using 400 W of high frequency RF power although the use of low frequency RF power is asserted to improve film stress. The barrier layers are preferably produced from alkoxysilanes or chlorinated alkylsilanes and N2O to reduce carbon content and increase the density of the layers.
The '570 patent does not identify process conditions for making barrier layers having low dielectric constants or for making etch stop layers having high oxide contents. The '570 patent also does not suggest use of the described layers as a barrier layer adjacent a low k dielectric layer or as an etch stop.
There remains a need for dielectric layers having low dielectric constants, good barrier properties, and high oxide content for use as barrier layers or etch stop layers in sub-micron devices.
The present invention provides a method and apparatus for depositing a silicon oxide layer having a low dielectric constant. The silicon oxide layer is produced by plasma assisted chemical vapor deposition of an organosilane, an organosiloxane, or combinations thereof, using RF or microwave power to generate reactive oxygen atoms. The properties of the silicon oxide layers are readily controlled by process variations, and different layers can be deposited in one deposition chamber as shown for an improved dual damascene process. In addition, the silicon oxide layers can be used as an adhesive layer between different layers, or as an intermetal dielectric layer. A preferred silicon oxide layer is produced by reaction of nitrous oxide, N2O, and a silicon compound containing Si—H bonds, such as methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2.
The silicon oxide layers are cured at low pressure and high temperature to stabilize properties. The silicon oxide layers are most preferably produced using separate applications of RF power to the deposition chamber to increase porosity of the deposited layers. The use of low levels of RF power is preferred at chamber pressures less than about 10 Torr. Microwave power is preferably provided to oxidizing gases in a dissociation chamber to control formation of reactive oxidizers without increasing the power level in the deposition chamber.
In a preferred embodiment, a silicon oxide layer is deposited on a patterned metal layer by plasma assisted reaction of one or more organosilane and/or organosiloxane compounds that include Si—H bonds.
The silicon oxide of the present invention has further utility in an integrated process for manufacture of reliable dual damascene structures in one deposition chamber to reduced capacitive coupling between interconnect lines. In a preferred embodiment, a low k dielectric film having high carbon content, greater than about 20% by atomic weight, is deposited as a via level dielectric layer. A low k dielectric film having a low carbon content, less than about 10% by atomic weight, is then deposited on the high carbon layer to form a trench level dielectric layer. A dual damascene etch then forms the trenches in the trench level dielectric layer and stops at the via level dielectric layer. After etching the vias in the via level dielectric layer, the upper surface is then planarized to leave a planar surface on the trench level dielectric layer.
The invention further provides an intermetal dielectric material (IMD) comprising the silicon oxide which is deposited on a conventional etch stop such as silicon oxide or silicon nitride. The silicon oxide can also be deposited as a thin adhesive layer.
So that the manner in which the above recited features, advantages and objects of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
For a further understanding of the present invention, reference should be made to the ensuing detailed description.
The present invention provides a method and apparatus for depositing a silicon oxide layer having a low dielectric constant, a high oxide content, and sufficient carbon content to provide barrier properties. The silicon oxide layer comprises an oxidized organosilane or organosiloxane and can be used as a lining layer adjacent other dielectric materials, as an etch stop layer adjacent dielectric materials having lower oxide content, as an intermetal dielectric layer, and as an adhesion layer between different materials. The oxidized organosilane material is deposited by plasma assisted oxidation of the organosilane or organosiloxane compounds using from about 10 W to about 200 W of constant RF power, or from about 20 W to about 500 W of pulsed RF power. The silicon oxide layer can also be deposited using frequent breaks, such as changing chambers or providing cooling time, to improve porosity. The RF power is preferably provided at a high frequency such as between 13 MHz and 14 MHz. The RF power is preferably provided in short duration cycles wherein the power is on at the stated levels for cycles less than about 200 Hz and the on cycles total from about 10% to about 30% of the total duty cycle. Intermittent RF power can operate at higher peak power levels and provide the same total power input as constant RF power at a lower power level.
Carbon which remains in the silicon oxide layer contributes to low dielectric constants and barrier properties. The remaining carbon is between about 1% and about 50% by atomic weight, and preferably includes sufficient C—H or C—F bonds to provide hydrophobic properties to the silicon oxide layer resulting in significantly lower dielectric constants and improved moisture barrier properties.
The silicon oxide layers are produced from silicon compounds that include carbon in organo groups that are not readily removed by oxidation at processing conditions. Preferably the —C—H bonds are included such as in alkyl or aryl groups, or fluorinated carbon derivatives thereof. Suitable organo groups also can include alkenyl and cyclohexenyl groups and functional derivatives. The organo silicon compounds include:
—(—SiH2CH2—)3— (cyclic)
—(—SiHCH3—O—)4— (cyclic)
octamethylcyclotetrasiloxane, and
—(—Si(CH3)2—O—)4— (cyclic)
—(—SiHCH3—O—)5— (cyclic)
—(—SiH2—CH2—SiH2—O—)2— (cyclic)
The organo silicon compounds are oxidized during deposition by reaction with oxygen (O2) or oxygen containing compounds such as nitrous oxide (N2O), ozone (O3), carbon dioxide (CO2), and water (H2O), preferably N2O, such that the carbon content of the deposited film is from 1 to 50% by atomic weight, preferably about 5 to 30%. The oxidized organo silicon layer has a dielectric constant of about 3.0 and has excellent barrier properties. The oxidized organo silicon layers further have high oxide contents in comparison to conventional low k dielectric layers and good adhesion properties.
Oxygen and oxygen containing compounds are preferably dissociated to increase reactivity when necessary to achieve a desired carbon content in the deposited film. RF power can be coupled to the deposition chamber to increase dissociation of the oxidizing compounds. The oxidizing compounds may also be dissociated in a microwave chamber prior to entering the deposition chamber to reduce excessive dissociation of the silicon containing compounds. Deposition of the silicon oxide layer can be continuous or discontinuous. Although deposition preferably occurs in a single deposition chamber, the layer can be deposited sequentially in two or more deposition chambers. Furthermore, RF power can be cycled or pulsed to reduce heating of the substrate and promote greater porosity in the deposited film.
The organosilane and organosiloxane compounds preferably include the structures:
wherein each Si is bonded to one or two carbon atoms, and C is included in an organo group, preferably alkyl or alkenyl groups such as —CH3, —CH2—CH3, —CH2—, or —CH2—CH2—, or fluorinated carbon derivatives thereof. The carbon atoms in the fluorinated derivatives may be partially or fully fluorinated to replace hydrogen atoms. When an organosilane or organosiloxane compound includes two or more Si atoms, each Si is separated from another Si by O, C, or —C—C—, wherein C is included in an organo group, preferably alkyl or alkenyl groups such as CH2, CH2CH2, CH(CH3) or C(CH3)2, or fluorinated derivatives thereof. The preferred organosilane and organosiloxane compounds are gases or liquids near room temperature and can be volatilized above about 10 Torr. Preferred organosilanes and organosiloxanes include:
—(—SiH2CH2—)3— (cyclic)
—(—SiHCH3—O—)4— (cyclic)
1,3,5,7,9-pentamethylcyclopentasiloxane, and
—(—SiHCH3—O—)5— (cyclic)
—(—SiH2—CH2—SiH2—O—)2— (cyclic)
and fluorinated carbon derivatives thereof, such as:
The hydrocarbon groups in the organosilanes and organosiloxane may be partially or fully fluorinated to convert C—H bonds to C—F bonds. Many of the preferred organosilane and organosiloxane compounds are commercially available. A combination of two or more of the organosilanes or organosiloxanes can be employed to provide a blend of desired properties such as dielectric constant, oxide content, hydrophobicity, film stress, and plasma etching characteristics.
The organosilane and organosiloxane compounds are preferably oxidized during deposition by plasma assisted reaction with oxygen which is formed during the deposition process by decomposition of nitrous oxide (N2O). Nitrous oxide does not react with the organosilanes or organosiloxanes without plasma assistance, and the oxygen-nitrogen bonds are readily broken at lower energies than the bonds in the organosilanes and organosiloxanes. The oxidized compounds adhere to contacted surfaces such as a patterned layer of a semiconductor substrate to form a deposited film. The deposited films are cured at low pressure and at temperatures from about 100 to about 450� C., preferably above about 400� C. to stabilize the barrier properties of the films. The deposited film has sufficient carbon content to provide barrier properties. The carbon content preferably includes C—H or C—F bonds to provide a hydrophobic film that is an excellent moisture barrier.
The present invention further provides a substrate processing system having a vessel including a reaction zone, a substrate holder for positioning a substrate in the reaction zone, and a vacuum system. The processing system further comprises a gas/liquid distribution system connecting the reaction zone of the vessel to supplies of an organosilane or organosiloxane compound, an oxidizing gas, and an inert gas, and an RF generator coupled to the gas distribution system for generating a plasma in the reaction zone. The processing system further comprises a controller comprising a computer for controlling the vessel, the gas distribution system, and the RF generator, and a memory coupled to the controller, the memory comprising a computer usable medium comprising a computer readable program code for selecting the process steps of depositing a low dielectric constant film with a plasma of an organosilane or organosiloxane compound and an oxidizing gas.
The processing system may further comprise in one embodiment computer readable program code for selecting the process steps of depositing a liner of the oxidized organo silicon compound, depositing a different dielectric layer, and optionally depositing a capping layer of the oxidized organo silicon compound.
Further description of the invention relates to a specific apparatus for depositing silicon oxide layers of the present invention and to preferred silicon oxide films.
Exemplary CVD Plasma Reactor
One suitable CVD plasma reactor in which a method of the present invention can be carried out is shown in
The reactor 10 includes heating of the process gases and substrate, such as by resistive heating coils (not shown) or external lamps (not shown). Referring to
When susceptor 12 and the wafer are in processing position 14, they are surrounded by a an insulator 17 and process gases exhaust into a manifold 24. During processing, gases inlet to manifold 11 are uniformly distributed radially across the surface of the wafer. A vacuum pump 32 having a throttle valve controls the exhaust rate of gases from the chamber.
Before reaching manifold 11, deposition and carrier gases are input through gas lines 18 into a mixing system 19 where they are combined and then sent to manifold 11. An optional microwave applicator 28 can be located on the input gas line for the oxidizing gas to provide additional energy that dissociates only the oxidizing gas. The microwave applicator provides from 0 to 6000 W. Generally, the process gases supply line 18 for each of the process gases also includes (i) safety shut-off valves (not shown) that can be used to automatically or manually shut off the flow of process gas into the chamber, and (ii) mass flow controllers (also not shown) that measure the flow of gas through the gas supply lines. When toxic gases are used in the process, several safety shut-off valves are positioned on each gas supply line in conventional configurations.
The deposition process performed in reactor 10 can be either a thermal process or a plasma enhanced process. In a plasma process, a controlled plasma is typically formed adjacent to the wafer by RF energy applied to distribution manifold 11 from RF power supply 25 (with susceptor 12 grounded). Alternatively, RF power can be provided to the susceptor 12 or RF power can be provided to different components at different frequencies. RF power supply 25 can supply either single or mixed frequency RF power to enhance the decomposition of reactive species introduced into the high vacuum region 15. A mixed frequency RF power supply typically supplies power at a high RF frequency (RF1) of 13.56 MHz to the distribution manifold 11 and at a low RF frequency (RF2) of 360 KHz to the susceptor 12. The silicon oxide layers of the present invention are most preferably produced using low levels of constant high frequency RF power or pulsed levels of high frequency RF power. Pulsed RF power preferably provides 13.56 MHz RF power at about 20 W to about 500 W, most preferably from 20 W to about 250 W, during about 10% to about 30% of the duty cycle. Constant RF power preferably provides 13.56 MHz RF power at about 10 W to about 200 W, preferably from about 20 W to about 100 W. Low power deposition preferably occurs at a temperature range from about −20� C. to about 40� C. At the preferred temperature range, the deposited film is partially polymerized during deposition and polymerization is completed during subsequent curing of the film.
When additional dissociation of the oxidizing gas is desired, an optional microwave chamber can be used to input from 0 to 3000 W of microwave power to the oxidizing gas prior to entering the deposition chamber. Separate addition of microwave power would avoid excessive dissociation of the silicon compounds prior to reaction with the oxidizing gas. A gas distribution plate having separate passages for the silicon compound and the oxidizing gas is preferred when microwave power is added to the oxidizing gas.
Typically, any or all of the chamber lining, distribution manifold 11, susceptor 12, and various other reactor hardware is made out of material such as aluminum or anodized aluminum. An example of such a CVD reactor is described in U.S. Pat. No. 5,000,113, entitled A Thermal CVD/PECVD Reactor and Use for Thermal Chemical Vapor Deposition of Silicon Dioxide and In-situ Multi-step Planarized Process, issued to Wang et al. and assigned to Applied Materials, Inc., the assignee of the present invention.
The lift motor 14 raises and lowers susceptor 12 between a processing position and a lower, wafer-loading position. The motor, the gas mixing system 19, and the RF power supply 25 are controlled by a system controller 34 over control lines 36. The reactor includes analog assemblies, such as mass flow controllers (MFCs) and standard or pulsed RF generators, that are controlled by the system controller 34 which executes system control software stored in a memory 38, which in the preferred embodiment is a hard disk drive. Motors and optical sensors are used to move and determine the position of movable mechanical assemblies such as the throttle valve of the vacuum pump 32 and motor for positioning the susceptor 12.
The system controller 34 controls all of the activities of the CVD reactor and a preferred embodiment of the controller 34 includes a hard disk drive, a floppy disk drive, and a card rack. The card rack contains a single board computer (SBC), analog and digital input/output boards, interface boards and stepper motor controller boards. The system controller conforms to the Versa Modular Europeans (VME) standard which defines board, card cage, and connector dimensions and types. The VME standard also defines the bus structure having a 16-bit data but and 24-bit address bus.
The system controller 34 operates under the control of a computer program stored on the hard disk drive 38. The computer program dictates the timing, mixture of gases, RF power levels, susceptor position, and other parameters of a particular process. The interface between a user and the system controller is via a CRT monitor 40 and light pen 44 which are depicted in
Referring to
The signals for monitoring the process are provided by the analog input and digital input boards of system controller and the signals for controlling the process are output on the analog output and digital output boards of the system controller 34.
A process sequencer subroutine 430 comprises program code for accepting the identified process chamber and set of process parameters from the process selector subroutine 420, and for controlling operation of the various process chambers. Multiple users can enter process set numbers and process chamber numbers, or a user can enter multiple process chamber numbers, so the sequencer subroutine 430 operates to schedule the selected processes in the desired sequence. Preferably the sequencer subroutine 430 includes computer readable program code to perform the steps of (i) monitoring the operation of the process chambers to determine if the chambers are being used, (ii) determining what processes are being carried out in the chambers being used, and (iii) executing the desired process based on availability of a process chamber and type of process to be carried out. Conventional methods of monitoring the process chambers can be used, such as polling. When scheduling which process is to be executed, the sequencer subroutine 430 can be designed to take into consideration the present condition of the process chamber being used in comparison with the desired process conditions for a selected process, or the "age" of each particular user entered request, or any other relevant factor a system programmer desires to include for determining the scheduling priorities.
Once the sequencer subroutine 430 determines which process chamber and process set combination is going to be executed next, the sequencer subroutine 430 causes execution of the process set by passing the particular process set parameters to a chamber manager subroutine 440 which controls multiple processing tasks in a process chamber 10 according to the process set determined by the sequencer subroutine 430. For example, the chamber manager subroutine 440 comprises program code for controlling CVD process operations in the process chamber 10. The chamber manager subroutine 440 also controls execution of various chamber component subroutines which control operation of the chamber component necessary to carry out the selected process set. Examples of chamber component subroutines are susceptor control subroutine 450, process gas control subroutine 460, pressure control subroutine 470, heater control subroutine 480, and plasma control subroutine 490. Those having ordinary skill in the art would readily recognize that other chamber control subroutines can be included depending on what processes are desired to be performed in the reactor 10.
In operation, the chamber manager subroutine 440 selectively schedules or calls the process component subroutines in accordance with the particular process set being executed. The chamber manager subroutine 440 schedules the process component subroutines similarly to how the sequencer subroutine 430 schedules which process chamber 10 and process set is to be executed next. Typically, the chamber manager subroutine 440 includes steps of monitoring the various chamber components, determining which components needs to be operated based on the process parameters for the process set to be executed, and causing execution of a chamber component subroutine responsive to the monitoring and determining steps.
Operation of particular chamber component subroutines will now be described with reference to
The process gas control subroutine 460 has program code for controlling process gas composition and flow rates. The process gas control subroutine 460 controls the open/close position of the safety shut-off valves, and also ramps up/down the mass flow controllers to obtain the desired gas flow rate. The process gas control subroutine 460 is invoked by the chamber manager subroutine 440, as are all chamber components subroutines, and receives from the chamber manager subroutine process parameters related to the desired gas flow rates. Typically, the process gas control subroutine 460 operates by opening the gas supply lines, and repeatedly (i) reading the necessary mass flow controllers, (ii) comparing the readings to the desired flow rates received from the chamber manager subroutine 440, and (iii) adjusting the flow rates of the gas supply lines as necessary. Furthermore, the process gas control subroutine 460 includes steps for monitoring the gas flow rates for unsafe rates, and activating the safety shut-off valves when an unsafe condition is detected.
In some processes, an inert gas such as helium or argon is flowed into the reactor 10 to stabilize the pressure in the chamber before reactive process gases are introduced into the chamber. For these processes, the process gas control subroutine 460 is programmed to include steps for flowing the inert gas into the chamber 10 for an amount of time necessary to stabilize the pressure in the chamber, and then the steps described above would be carried out. Additionally, when a process gas is to be vaporized from a liquid precursor, for example 1,3,5-trisilano-2,4,6-trimethylene (1,3,5-trisilanacyclo-hexane), the process gas control subroutine 460 would be written to include steps for bubbling a delivery gas such as helium through the liquid precursor in a bubbler assembly. For this type of process, the process gas control subroutine 460 regulates the flow of the delivery gas, the pressure in the bubbler, and the bubbler temperature in order to obtain the desired process gas flow rates. As discussed above, the desired process gas flow rates are transferred to the process gas control subroutine 460 as process parameters. Furthermore, the process gas control subroutine 460 includes steps for obtaining the necessary delivery gas flow rate, bubbler pressure, and bubbler temperature for the desired process gas flow rate by accessing a stored table containing the necessary values for a given process gas flow rate. Once the necessary values are obtained, the delivery gas flow rate, bubbler pressure and bubbler temperature are monitored, compared to the necessary values and adjusted accordingly.
The pressure control subroutine 470 comprises program code for controlling the pressure in the reactor 10 by regulating the size of the opening of the throttle valve in the exhaust pump 32. The size of the opening of the throttle valve is set to control the chamber pressure to the desired level in relation to the total process gas flow, size of the process chamber, and pumping set point pressure for the exhaust pump 32. When the pressure control subroutine 470 is invoked, the desired, or target pressure level is received as a parameter from the chamber manager subroutine 440. The pressure control subroutine 470 operates to measure the pressure in the reactor 10 by reading one or more conventional pressure manometers connected to the chamber, compare the measure value(s) to the target pressure, obtain PID (proportional, integral, and differential) values from a stored pressure table corresponding to the target pressure, and adjust the throttle valve according to the PID values obtained from the pressure table. Alternatively, the pressure control subroutine 470 can be written to open or close the throttle valve to a particular opening size to regulate the reactor 10 to the desired pressure.
The heater control subroutine 480 comprises program code for controlling the temperature of the heat modules or radiated heat that is used to heat the susceptor 12. The heater control subroutine 480 is also invoked by the chamber manager subroutine 440 and receives a target, or set point, temperature parameter. The heater control subroutine 480 measures the temperature by measuring voltage output of a thermocouple located in a susceptor 12, compares the measured temperature to the set point temperature, and increases or decreases current applied to the heat module to obtain the set point temperature. The temperature is obtained from the measured voltage by looking up the corresponding temperature in a stored conversion table, or by calculating the temperature using a fourth order polynomial. The heater control subroutine 480 gradually controls a ramp up/down of current applied to the heat module. The gradual ramp up/down increases the life and reliability of the heat module. Additionally, a built-in-fail-safe mode can be included to detect process safety compliance, and can shut down operation of the heat module if the reactor 10 is not properly set up.
The plasma control subroutine 490 comprises program code for setting the RF bias voltage power level applied to the process electrodes in the reactor 10, and optionally, to set the level of the magnetic field generated in the reactor. Similar to the previously described chamber component subroutines, the plasma control subroutine 490 is invoked by the chamber manager subroutine 440.
The above CVD system description is mainly for illustrative purposes, and other plasma CVD equipment such as electrode cyclotron resonance (ECR) plasma CVD devices, induction-coupled RF high density plasma CVD devices, or the like may be employed. Additionally, variations of the above described system such as variations in susceptor design, heater design, location of RF power connections and others are possible. For example, the wafer could be supported and heated by a resistively heated susceptor. The pretreatment and method for forming a pretreated layer of the present invention is not limited to any specific apparatus or to any specific plasma excitation method.
Deposition of the Oxidized Organosilane or Organosiloxane Dielectric in a Three-Layer Gap Filling Process
The oxidized organosilane or organosiloxane layer of the present invention can be used in a three-layer gap filling process as shown in
Referring to
Referring to
For an 8″ single wafer chamber, the high frequency RF source of approximately 13.56 MHz is preferably connected to a gas distribution system and driven at about 10 to about 500 W while a low frequency RF source of about 350 KHz to 1 MHz is optionally connected to a susceptor and driven at about 0 to about 100 W. In a preferred embodiment, the high frequency RF source is driven at about 20 W to about 250 W of pulsed RF power, and the low frequency RF source is driven at about 0 to about 50 W of pulsed RF power at a duty cycle from 10% to 30%. The pulsed RF power is preferably cycled in short intervals, most preferably having a frequency less than about 200 Hz. When the high frequency RF power is constant, the power level preferably ranges from about 20 W to about 100 W.
The oxidized organosilane or organosiloxane layer is then cured at a pressure less than about 10 Torr a temperature from about 100� C. to about 450� C. Optionally, curing could be conducted after deposition of additional dielectric layers.
The above process conditions result in the deposition of a PECVD lining layer 300 (at about 2000 Å per minute) with improved barrier characteristics for the subsequent deposition of the gap filling layer 302 shown in
The process gases for the gap filling layer 302 are preferably SiH4, CH3SiH3, or (CH3)2SiH2 and 50 wt % of hydrogen peroxide (H2O2) which is vaporized and mixed with an inert carrier gas, such as helium. However, the gap filling layer can be any dielectric layer which has an acceptable dielectric constant. Alternative silicon containing compounds can be used if byproducts are vapors at deposition conditions. Preferred alternative compounds incorporate oxysilano or silano groups, such as:
The process gas flows range from 0-2000 sccm for He, 10-200 sccm for CH3SiH3, and 0.1 to 3 g/min. for H2O2. The preferred gas flows range from 100-500 sccm for He, 20-100 sccm for CH3SiH3, and 0.1 to 1 g/min. for H2O2. These flow rates are given for a chamber having a volume of approximately 5.5 to 6.5 liters. Preferably, reactor 10 is maintained at a pressure of about 0.2 to about 5 torr during deposition of the gap filling layer 302. The gap filling layer 302 may be partially cured as shown in
Gap filling layers produced from methylsilane are typically hydrophilic and have poor moisture barrier properties. When deposited on a lining layer produced from methylsilane, a gap filling layer produced from methylsilane surprisingly is hydrophobic and has good moisture barrier properties.
Referring to
A dual damascene structure which includes an oxidized organosilane or organosiloxane layers as an etch stop or as an intermetal dielectric layer is shown in
Referring again to
A preferred dual damascene structure fabricated in accordance with the invention includes a lining layer as shown in
As shown in
The metallization structure is then formed with a conductive material such as aluminum, copper, tungsten or combinations thereof. Presently, the trend is to use copper to form the smaller features due to the low resistivity of copper (1.7 μΩ-cm compared to 3.1 μΩ-cm for aluminum). Preferably, as shown in
A dual damascene structure which includes an oxidized organosilane or organosiloxane layer as an adhesive layer between a premetal dielectric layer and an intermetal dielectric layer is shown in
A preferred dual damascene structure comprising an adhesive layer in accordance with the invention is shown in
As shown in
The metallization structure is then formed with a conductive material such as aluminum, copper, tungsten or combinations thereof. Presently, the trend is to use copper to form the smaller features due to the low resistivity of copper (1.7 μΩ-cm compared to 3.1 μΩ-cm for aluminum). Preferably, as shown in
Another preferred dual damascene structure comprises silicon oxide layers having different dielectric constants to resist crosstalk between layers, and is deposited as shown in
As shown in
As shown in
The metallization structure is then formed with a conductive material such as aluminum, copper, tungsten or combinations thereof. Presently, the trend is to use copper to form the smaller features due to the low resistivity of copper (1.7 μΩ-cm compared to 3.1 μΩ-cm for aluminum). Preferably, as shown in
The invention is further described by the following examples.
The following example and demonstrates deposition of an oxidized organosilane or organosiloxane film having excellent barrier and adhesion properties. This example was undertaken using a chemical vapor deposition chamber, and in particular, a "CENTURA DxZ" system which includes a solid-state RF matching unit with a two-piece quartz process kit, both fabricated and sold by Applied Materials, Inc., Santa Clara, Calif.
Non-Pulsed RF Power
An oxidized dimethylsilane film was deposited at a chamber pressure of 3.0 Torr and temperature of 15� C. from reactive gases which were flowed into the reactor as follows:
Dimethylsilane, (CH3)2SiH2, at 55 sccm Nitrous oxide, N2O, at 300 sccm Helium, He, at 4000 sccm.
The substrate was positioned 600 mil from the gas distribution showerhead and 20 W of high frequency power (13 MHz) was applied to the showerhead for plasma enhanced deposition of an oxidized dimethylsilane layer. The oxidized dimethylsilane material had a dielectric constant of about 2.5 and was hydrophobic.
The following hypothetical examples describe deposition of an oxidized organosilane or organosiloxane film of the present invention. These examples are written for the chemical vapor deposition chamber described in the prior example.
Pulsed RF Power
An oxidized 1,3,5-trisilano-2,4,6-trimethylene (cyclic) film is deposited at a chamber pressure of 3.0 Torr and temperature of 15� C. from reactive gases which flow into the reactor as follows:
1,3,5-trisilano-2,4,6-trimethylene, 20 sccm —(—SiH2CH2—)3— (cyclic), at Nitrous oxide, N2O, at 300 sccm Helium, He, at 4000 sccm.
The substrate is positioned 600 mil from the gas distribution showerhead and 50 W of pulsed high frequency power (13 MHz) is applied to the showerhead for plasma enhanced deposition of an oxidized 1,3,5-trisilano-2,4,6-trimethylene layer
Pulsed RF Power
An oxidized 1,3-dimethyldisiloxane film is deposited at a chamber pressure of 3.0 Torr and temperature of 15� C. from reactive gases which are flowed into the reactor as follows:
1,3-Dimethyldisiloxane, 30 sccm CH3—SiH2—O—SiH2—CH3, at Nitrous oxide, N2O, at 300 sccm Helium, He, at 4000 sccm.
The substrate is positioned 600 mil from the gas distribution showerhead and 50 W of pulsed high frequency RF power (13 MHz) is applied to the showerhead for plasma enhanced deposition of an oxidized dimethyldisiloxane layer.
Microwave/RF Power
An oxidized 1,3-dimethyldisiloxane film is deposited at a chamber pressure of 3.0 Torr and temperature of 15� C. from reactive gases which are flowed into the reactor as follows:
1,3-Dimethyldisiloxane, 30 sccm CH3—SiH2—O—SiH2—CH3, at Nitrous oxide, N2O, at 300 sccm Helium, He, at 4000 sccm.
Prior to entering the chamber, the nitrous oxide is dissociated in a microwave applicator that provides 2000 W of microwave energy. The substrate is positioned 600 mil from the gas distribution showerhead and 50 W of high frequency RF power (13 MHz) is applied to the showerhead in cycles for plasma enhanced deposition of an oxidized dimethyldisiloxane layer. Each cycle provides RF power for 30% of the cycle.
While the foregoing is directed to preferred embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims which follow.
|Patente citada
|Fecha de presentaci�n
|Fecha de publicaci�n
|1 Mar 1983
|27 Ago 1985
|Rhone-Poulenc Specialites Chimiques
|Catalytic cyclotrimerization of polyisocyanates
|3 Jun 1983
|10 Dic 1985
|Edward Sacher
|Moisture impermeability or organosilicone films
|29 Abr 1985
|10 Mar 1987
|Kabushiki Kaisha Toyota Chuo Kenkyusho
|Composite material and process for producing the same
|28 Oct 1985
|6 Dic 1988
|International Business Machines Corporation
|Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
|22 Oct 1987
|17 Ene 1989
|Motorola Inc.
|Spin-on glass for use in semiconductor processing
|21 Oct 1986
|14 Mar 1989
|Canon Kabushiki Kaisha
|Method for forming a deposited film
|21 Dic 1987
|9 May 1989
|Pilkington Plc
|Coatings on glass
|7 Abr 1988
|27 Jun 1989
|Dow Corning Corporation
|Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
|29 Jun 1987
|4 Jul 1989
|Focus Semiconductor Systems, Inc.
|Low temperature chemical vapor deposition of silicon dioxide films
|26 Oct 1988
|16 Ene 1990
|Texas Instruments Inc.
|Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
|20 Ene 1988
|13 Feb 1990
|The United States Of America As Represented By The Secretary Of The Air Force
|Method for the deposition of high quality silicon dioxide at low temperature
|1 Dic 1988
|27 Nov 1990
|Monsanto Company
|Composite solar/safety film and laminated window assembly made therefrom
|28 Oct 1977
|1 Ene 1991
|Hochberg Arthur K
|Deposition of silicon oxide films using alkylsilane liquid sources
|19 Dic 1986
|19 Mar 1991
|Applied Materials, Inc.
|Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
|18 Mar 1988
|19 Mar 1991
|Lti Biomedical, Inc.
|Shielded electromagnetic transducer
|27 Jul 1990
|2 Jul 1991
|Air Products And Chemicals, Inc.
|Method of forming silicon dioxide glass films
|9 Oct 1990
|13 Ago 1991
|Micron Technology, Inc.
|Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
|19 Jul 1990
|9 Jun 1992
|At&T Bell Laboratories
|Method for depositing dielectric layers
|11 Abr 1991
|23 Jun 1992
|At&T Bell Laboratories
|Method of forming oxide layers by bias ECR plasma deposition
|16 Abr 1991
|20 Oct 1992
|Kabushiki Kaisha Toshiba
|Method for forming a film on a substrate by activating a reactive gas
|12 Nov 1991
|26 Ene 1993
|E. I. Du Pont De Nemours And Company
|Method of coating metal using low temperature plasma and electrodeposition
|18 Sep 1991
|20 Abr 1993
|Air Products And Chemicals, Inc.
|Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources
|28 Oct 1991
|4 May 1993
|Istituto Guido Donegani S.P.A.
|Method for passivating the inner surface by deposition of a ceramic coating of an apparatus subject to coking, apparatus prepared thereby, and method of utilizing apparatus prepared thereby
|27 Sep 1991
|6 Jul 1993
|The Boc Group, Inc.
|Apparatus for rapid plasma treatments and method
|10 Jul 1991
|21 Sep 1993
|At&T Bell Laboratories
|Dielectric deposition
|2 Ago 1991
|5 Oct 1993
|U.S. Philips Corp.
|Method of providing silicon dioxide layer on a substrate by means of chemical reaction from the vapor phase at a low pressure (LPCVD)
|9 Jul 1992
|18 Ene 1994
|L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude
|Process for producing a deposit of an inorganic and amorphous protective coating on an organic polymer substrate
|6 Ago 1992
|8 Feb 1994
|Canon Kabushiki Kaisha
|Electrophotographic light-receiving member
|21 Dic 1992
|29 Mar 1994
|The Dow Chemical Company
|Protective film for articles and method
|19 Dic 1991
|24 May 1994
|Fujitsu Limited
|Process for forming silicon oxide film
|3 May 1991
|4 Oct 1994
|Veniamin Dorfman
|Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films
|23 Ene 1991
|8 Nov 1994
|Applied Materials, Inc.
|Plasma-enhanced CVD process using TEOS for depositing silicon oxide
|23 Sep 1993
|15 Nov 1994
|Becton, Dickinson And Company
|Process for barrier coating of plastic objects
|22 Oct 1993
|21 Feb 1995
|Mitsubishi Petrochemical Co., Ltd.
|Process for producing aromatic polycarbonate
|1 Jul 1993
|14 Nov 1995
|Dow Corning Corporation
|Method of forming crystalline silicon carbide coatings
|25 May 1994
|14 Nov 1995
|Veniamin Dorfman
|Diamond-like metallic nanocomposites
|24 Jun 1994
|21 Nov 1995
|Becton, Dickinson And Company
|Process for barrier coating of plastic objects
|17 Nov 1994
|27 Feb 1996
|The Dow Chemical Company
|Method of forming a plasma polymerized film
|3 Mar 1994
|16 Abr 1996
|Diamonex, Incorporated
|Ion beam process for deposition of highly abrasion-resistant coatings
|19 Nov 1993
|11 Jun 1996
|Fujitsu Limited
|Process for forming thin films by plasma CVD for use in the production of semiconductor devices
|31 May 1995
|25 Jun 1996
|Eic Laboratories, Inc.
|Protective overlayer material and electro-optical coating using same
|9 Ene 1995
|10 Sep 1996
|Canon Sales Co., Inc.
|Method of forming insulating film
|30 Sep 1994
|8 Oct 1996
|International Business Machines Corporation
|PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
|18 May 1995
|26 Nov 1996
|Motorola, Inc.
|Method for forming inlaid interconnects in a semiconductor device
|28 Jun 1995
|14 Ene 1997
|Nec Corporation
|Method and apparatus for forming silicon oxide film by chemical vapor deposition
|21 Dic 1995
|28 Ene 1997
|Mitsubishi Denki Kabushiki Kaisha
|Semiconductor device and method of fabricating the same
|16 Nov 1995
|4 Feb 1997
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Deposit-etch-deposit ozone/teos insulator layer method
|24 Jun 1994
|1 Abr 1997
|Becton, Dickinson And Company
|Process for barrier coating of plastic objects
|3 Mar 1994
|8 Abr 1997
|Monsanto Company
|Highly abrasion-resistant, flexible coatings for soft substrates
|11 May 1995
|10 Jun 1997
|Air Products And Chemicals, Inc.
|Chemical vapor deposition (CVD) of silicon dioxide films using oxygen-silicon source reactants and a free radical promoter
|3 Oct 1995
|10 Jun 1997
|Advanced Refractory Technologies, Inc.
|Capacitive thin films using diamond-like nanocomposite materials
|20 Dic 1995
|4 Nov 1997
|Kabushiki Kaisha Toshiba
|Method of depositing a reflow SiO2 film
|15 Jul 1996
|2 Dic 1997
|Chartered Semiconductor Manufacturing Pte Ltd.
|Etch stop for copper damascene process
|20 Dic 1995
|23 Dic 1997
|Kabushiki Kaisha Toshiba
|Method of manufacturing semiconductor device having multilayer interconnection
|24 Dic 1996
|30 Dic 1997
|Mitsubishi Denki Kabushiki Kaisha
|Semiconductor device comprising an SiOF insulative film
|10 Sep 1996
|14 Abr 1998
|Intel Corporation
|Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
|7 Jun 1995
|19 May 1998
|Sumitomo Metal Industries, Ltd.
|Method for forming a thin film of a silicon oxide on a silicon substrate, by BCR plasma
|26 Feb 1996
|4 Ago 1998
|Texas Instruments Incorporated
|Method of dual masking for selective gap fill of submicron interconnects
|9 Ago 1996
|1 Sep 1998
|Canon Sales Co., Inc.
|Method for forming a fluorine containing silicon oxide film
|2 Ago 1996
|15 Sep 1998
|Applied Materials, Inc.
|Low dielectric constant silicon dioxide sandwich layer
|16 Jul 1997
|13 Oct 1998
|Motorola, Inc.
|Process for forming a semiconductor device
|28 Oct 1996
|10 Nov 1998
|Regents Of The University Of California
|Process for 3D chip stacking
|10 May 1995
|12 Ene 1999
|Trikon Equipment Limited
|Method of treating a semi-conductor wafer
|30 Jun 1993
|23 Feb 1999
|Trikon Technologies Limited
|Method of treating a semi-conductor wafer
|12 Abr 1996
|30 Mar 1999
|Monsanto Company
|Ion beam process for deposition of highly wear-resistant optical coatings
|18 Ago 1997
|6 Abr 1999
|Industrial Technology Research Institute
|Method for making stacked and borderless via structures for multilevel metal interconnections on semiconductor substrates
|10 Jun 1997
|2 Nov 1999
|Industrial Technology Research Institute
|Sequential oxygen plasma treatment and chemical mechanical polish (CMP) planarizing method for forming planarized low dielectric constant dielectric layer
|28 Ago 1997
|23 Nov 1999
|Matsushita Electric Industrial Co., Ltd.
|Method of forming interlayer insulating film
|27 Jul 1998
|4 Abr 2000
|Massachusetts Institute Of Technology
|Pyrolytic chemical vapor deposition of silicone films
|24 Oct 1997
|18 Abr 2000
|Quester Technology, Inc.
|Low dielectric constant materials and method
|11 Feb 1998
|25 Abr 2000
|Applied Materials, Inc.
|Method of depositing a low k dielectric with organo silane
|28 Abr 1998
|30 May 2000
|Silcon Valley Group Thermal Systems, Llc
|Method of making low κ dielectric inorganic/organic hybrid films
|13 Jul 1998
|6 Jun 2000
|Applied Materials, Inc.
|Low power method of depositing a low k dielectric with organo silane
|24 Feb 1998
|27 Jun 2000
|Alliedsignal Inc.
|Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
|8 Dic 1997
|26 Sep 2000
|Mitsubishi Denki Kabushiki Kaisha
|Semiconductor device organic insulator film
|30 Jul 1998
|31 Oct 2000
|International Business Machines Corporation
|Dual damascene processing for semiconductor chip interconnects
|29 Jun 1998
|14 Nov 2000
|International Business Machines Corporation
|Hydrogenated oxidized silicon carbon material
|22 Dic 1995
|28 Nov 2000
|Sgs-Thomson Microelectronics S.R.L.
|Process for the production of a semiconductor device having better interface adhesion between dielectric layers
|29 May 1998
|12 Dic 2000
|Dow Corning Corporation
|Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
|29 Sep 1998
|11 Sep 2001
|Applied Materials, Inc.
|CVD plasma assisted low dielectric constant films
|20 Nov 1997
|16 Oct 2001
|Advanced Technology Materials, Inc.
|Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
|4 Nov 1998
|16 Oct 2001
|Applied Materials, Inc.
|Plasma processes for depositing low dielectric constant films
|26 May 1999
|6 Nov 2001
|International Business Machines Corporation
|Multiphase low dielectric constant material
|30 Dic 1999
|18 Dic 2001
|Novellus Systems, Inc.
|Deposition of low dielectric constant thin film without use of an oxidizer
|12 Dic 2000
|22 Ene 2002
|Novellus Systems, Inc.
|Method to deposit SiOCH films with dielectric constant below 3.0
|7 Ago 1996
|21 May 2002
|Seiko Epson Corporation
|Thin film semiconductor device and method for producing the same
|18 Oct 2000
|25 Jun 2002
|Asm Japan K.K.
|Method for forming film with low dielectric constant on semiconductor substrate
|24 Mar 2000
|20 Ago 2002
|Andrew C. Ross
|CSP stacking technology using rigid/flex construction
|25 Ene 2001
|27 Ago 2002
|International Business Machines Corporation
|Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
|28 Mar 2001
|24 Sep 2002
|Asm Japan K.K.
|Silicone polymer insulation film on semiconductor substrate and method for forming the film
|27 Sep 2001
|12 Nov 2002
|International Business Machines Corporation
|Multiphase low dielectric constant material and method of deposition
|23 Feb 2001
|12 Nov 2002
|Canon Sales Co., Inc.
|Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent
|18 Jun 2001
|26 Nov 2002
|Applied Materials, Inc.
|CVD plasma assisted lower dielectric constant sicoh film
|27 Nov 2000
|31 Dic 2002
|Applied Materials, Inc.
|Method of depositing organosilicate layers
|14 Dic 1998
|11 Mar 2003
|Sgs-Thomson Microelectronics S.R.L.
|Process for the production of a semiconductor device having better interface adhesion between dielectric layers
|25 May 2000
|25 Mar 2003
|Applied Materials, Inc.
|CVD plasma assisted low dielectric constant films
|19 Jun 2002
|1 Abr 2003
|International Business Machines Corporation
|Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
|4 Dic 2000
|15 Abr 2003
|Electron Vision Corporation
|Method of processing films prior to chemical vapor deposition using electron beam processing
|17 Abr 1997
|22 Abr 2003
|Micron Technology, Inc.
|Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
|25 Abr 2002
|6 May 2003
|Asm Japan K.K.
|Siloxan polymer film on semiconductor substrate
|13 Jun 2000
|13 May 2003
|Applied Materials, Inc.
|Plasma processes for depositing low dielectric constant films
|17 Feb 2000
|24 Jun 2003
|Applied Materials Inc.
|Electron beam modification of CVD deposited low dielectric constant materials
|31 Ago 2001
|24 Jun 2003
|Air Products And Chemicals, Inc.
|Organosilicon precursors for interlayer dielectric films with low dielectric constants
|18 Oct 2000
|24 Jun 2003
|Applied Materials Inc.
|Ultrasonic spray coating of liquid precursor for low K dielectric coatings
|19 Sep 2001
|22 Jul 2003
|Applied Materials Inc.
|Plasma processes for depositing low dielectric constant films
|22 Dic 2000
|4 Nov 2003
|Canon Sales Co., Inc.
|Film forming method and semiconductor device
|27 Jul 1999
|9 Dic 2003
|Asml Us, Inc.
|Low κ dielectric inorganic/organic hybrid films and method of making
|27 Ago 2002
|11 May 2004
|Applied Materials Inc.
|Plasma processes for depositing low dielectric constant films
|26 Ago 2003
|22 Mar 2005
|Applied Materials, Inc.
|Plasma processes for depositing low dielectric constant films
|10 Feb 1999
|28 Jun 2001
|Applied Materials, Inc.
|Plasma processes for depositing low dielectric constant films
|24 Oct 1996
|21 May 1997
|Dow Corning Corporation
|Method for depositing Si-O containing coatings
|A. Haas Bar-Ilan, et al., "A Comparative Study of Sub-Micron Gap Filing and Planarization Techniques," SPIE, vol. 2636, pp. 277-288.
|A. Nara, et al., Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O2, Japan J. Appl. Phys., vol. 36, (1997) Pt. 1 No. 3B.
|A.M. Wrobel, et al., "Reactivity of Alkylsilnes and Alkylcarbosilanes in Atomic Hydrogen-Induced Chemical Vapor Deposition," J. Electrochemical Society, Vo. 145, No. 3 (Mar. 1998), pp. 1060-1065.
|B. Zhao, et al., "Integration of Low Dielectric Constant Materials in Advanced Aluminum and Copper Interconnects," Mat. Res. Soc. Symp. Proc, vol. 564, (1999), pp. 485-497.
|Bunshah, et al., "Deposition Technologies for films and Coatings: Developments and Applications," Noyes Publications (1982) pp. 339-367.
|Dobson, et al., "Advanced SiO2 Planarization Using Silane and H2O2," Dec. 1994, pp. 85-88.
|European Search Report from EP 00 11 2300, dated Aug. 24, 2001.
|Gaillard, et al., "Silicon Dioxide Chemical Vapor Deposition Using Silane and Hydrogen Peroxide," J. Vac. Sci. Technology, B 14(4), Jul./Aug. 1996, pp. 2767-2769.
|Grill, et al., "Diamondlike Carbon Materials as BEOL Interconnect Dielectrics: Integration Issues," The Electrochemical Society Proceedings, vol. 98-3.
|Grill, et al., "Diamondlike Carbon Materials as Low-k Dielectrics," Conference Proceedings ULSI XII (1997) Materials Research Society, pp. 417-423.
|M. Ducarroir, et al., "SiCN Coatings Prepared by PACVD from TMS-NH3-AR System on Steel," Journal de Physique IV, vol. 3 (1993), pp. 247-253.
|M. Moriyama, et al., "Thermal Stability of SinxCy Films Prepared by Plasma CVD," Journal of the Ceramic Society of Japan 101 (7) pp. 757-763 (1983).
|M.J. Loboda, et al., "Deposition of Low-K Dielectric Films Using Trimethylsilane," Electrochemical Society Proceedings, vol. 98-6., pp. 145-152.
|M.J. Loboda, et al., "Plasma-Enhanced Chemical Vapor Deposition of a SiC:H Films from Organosilicon Precursors," J. Vac. Sci Technology A 12(1) Jan./Feb. 1994, pp. 90-96.
|M.J. Loboda, et al., "Using Trimethylsilane to Improve Safety, Throughput and Versatility in PECVD Processes," Electrochemical Proceedings, vol. 97-10, pp. 443-453.
|Matsuura, et al., "Novel Self-Planarizing CVD Oxide for Interlayer Dielectric Applications," IEDM (1994) pp. 5.7.1-5.7.4.
|Notice of Reasons for Rejection dated Nov. 25, 2008 for Japanese Patent Application No. 2000-531599. (APPM/002592 JAPA P).
|Peters, L., "Pursuing the Perfect Low-K Dielectric," Semiconductor International, Sep. 1998, 7 pages.
|Pierson, "Handbook of Chemical Vapor Deposition (CVD); Principles, Technology and Applications," (1992), pp. 208-209.
|Robles, et al., "Characterization of High Density Plasma Chemical Vapor Deposited Alpha-Carbon and Alpha-Fluorinated Carbon Films for Ultra Low Dielectric Applications," Feb. 10-11, (1997) DUMIC Conference, pp. 26-33.
|S. Noguchi, et al., "Liquid Phase Oxidation Employing O Atoms Produced by Microwave Discharge and Si(CH3)4" Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, (1987), pp. 451-454.
|Sugahara, et al., "Low Dielectric Constant Carbon Containing SiO2 Films Deposited by PECVD Technique Using a Novel CVD Precursor," Feb. 10-11, 1997 DUMIC Conference, pp. 19-25.
|Tajima, et al., "Characterization of Plasma Polymers from Tetramethysilane, Octamethylclotetrasiloxane," Journal of Polymer Science: Part A: Polymer Chemistry (1987), vol. 25, pp. 1737-1744.
|Wu, et al., "Advanced Metal Barrier Free Cu Damascene Interconnects with PECVD Silicon Carbide Barriers for 90/65-nm BEOL Technology," (2002) IEEE, IEDM-pp. 595-598.
|Y. Horiike, et al., "Filling of Si Oxide Into a Deep Trench Using Digital CVD Method," Applied Surface Science, vol. 46, (1990), pp. 168-174.
|Patente citante
|Fecha de presentaci�n
|Fecha de publicaci�n
|31 Jul 2009
|15 Nov 2011
|Novellus Systems, Inc.
|Photoresist strip method for low-k dielectrics
|13 Jul 2009
|15 Nov 2011
|Novellus Systems, Inc.
|Method for post-etch cleans
|12 May 2005
|6 Mar 2012
|Novellus Systems, Inc.
|Plasma based photoresist removal system for cleaning post ash residue
|14 Oct 2008
|5 Jun 2012
|Novellus Systems, Inc.
|High dose implantation strip (HDIS) in H2 base chemistry
|4 Abr 2007
|7 May 2013
|Novellus Systems, Inc.
|Methods for stripping photoresist and/or cleaning metal regions
|24 May 2010
|21 May 2013
|Novellus Systems, Inc.
|Simultaneous front side ash and backside clean
|11 Dic 2009
|26 Nov 2013
|Novellus Systems, Inc.
|Low damage photoresist strip method for low-K dielectrics
|2 May 2012
|4 Feb 2014
|Novellus Systems, Inc.
|High dose implantation strip (HDIS) in H2 base chemistry
|10 Feb 2012
|6 May 2014
|Novellus Systems, Inc.
|Plasma based photoresist removal system for cleaning post ash residue
|8 Dic 2010
|13 May 2014
|Novellus Systems, Inc.
|Enhanced passivation process to protect silicon prior to high dose implant strip
|18 Ene 2012
|11 Nov 2014
|United Microelectronics Corp.
|Method for manufacturing damascene structure involving dummy via holes
|5 Feb 2013
|21 Jun 2016
|Novellus Systems, Inc.
|Methods for stripping photoresist and/or cleaning metal regions
|10 Jun 2014
|6 Dic 2016
|Lam Research Corporation
|Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
|26 May 2015
|7 Feb 2017
|Novellus Systems, Inc.
|Ultra low silicon loss high dose implant strip
|20 Ago 2012
|4 Abr 2017
|Novellus Systems, Inc.
|Photoresist strip processes for improved device integrity
|27 Feb 2007
|5 Mar 2009
|Novellus Systems, Inc.
|Enhanced stripping of low-K films using downstream gas mixing
|8 Jul 2008
|14 Oct 2010
|Jsr Corporation
|Method for producing silicon compound
|18 Ene 2012
|18 Jul 2013
|En-Chiuan Liou
|Method for manufacturing damascene structure
|Clasificaci�n de EE.UU.
|Clasificaci�n internacional
|Clasificaci�n cooperativa
|Clasificaci�n europea
|16 May 2005
Owner name: APPLIED MATERIALS, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHEUNG, DAVID;YAU, WAI-FAN;MANDAL, ROBERT P.;AND OTHERS;REEL/FRAME:016218/0934;SIGNING DATES FROM 19981218 TO 19990107
|2 Ene 2013
|Fee payment
Year of fee payment: 4
|28 Dic 2016
|Fee payment
Year of fee payment: 8


text:
WE ARE: Illinois Association of Rehabilitation Facilities (IARF) is the voice of human service organizations in government. In addition, IARF works to provide agencies with individual consultation on issues that affect them specifically. Our purpose is clear, "To assist in the development and improvement of services in Illinois."
WHO WILL BE THERE: The IARF educational conference and expo is a preferred resource for professionals and practitioners who want to increase and strengthen knowledge of services that supports individuals with intellectual/developmental disabilities, mental illnesses and/or substance use disorders.
WHY: Exhibiting, advertising and sponsoring this premier event offers your company the chance to showcase your products and services and provides a great opportunity for direct contact with decision makers and those who influence decision makers.
TARGET AUDIENCE: The IARF Educational Conference and Expo attracts more than 325 stakeholders from a range of human service settings and occupations throughout the State of Illinois.
Decision Makers: CEOs, CFOs, Program/Clinical Directors, Vice Presidents, Nurses
Decision Influencers: Qualified Intellectual Disability Professionals (QIDP), Qualified Mental Health Professionals (QMHP), residential and program directors, clinical staff, community job development staff
Direct Care Staff: Direct support professionals
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Wednesday, October 11, 2017 - Friday, October 13, 2017
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Financial Analysis Certification $85
NOTE- You will be given a reference e-book to read which has 399 pages And the test will be based on that e-book , you can take the test only after 10 days Of purchase.
Introduction to the Financial Analysis Process for Company Controllers
A comprehensive knowledge about how the financial analysis process is carried out is essential for company controllers since they are considered as the chief accounting officers and accounting department heads of an organization. Financial analysis refers to that vital process which involves analyzing all the figures and concepts in the past and present financial statements and other accounting reports of an organization as a means of helping the most authorized people in formulating the right decisions. Financial analysis is extremely important for company controllers as this will allow them to become more familiar about the procedures involved in closely scrutinizing the financial statements of the company as well as other financial accounts and reports that are essential for its growth and development including cost accounting, general ledger, accounts receivable, accounts payable, tax compliance, payroll and budgeting.
A more comprehensive knowledge about the financial analysis process is also extremely essential for company controllers because this will allow them to successfully handle all their duties and responsibilities especially the act of supervising accountants and any other professional who is part of the finance and accounting department of an organization including cost accounting manager, payroll manager, tax manager and credit manager. With the help of their detailed background about finance and accounting and the entire financial analysis process, it will no longer become hard for those who have completed a company controllers course to perform their responsibilities including the preparation of financial statements and reports and making sure that accurate, relevant, objective and updated information are included in all these statements and reports.
Brainmeasures Financial Analysis Certification for Company Controllers
Brainmeasures, a reputable company which is known for being the leader in providing reliable online certification courses and programs to the public, offers a financial analysis certification course designed for aspiring company controllers who wish to gain a more comprehensive background about the topic. The financial analysis course for company controllers offered by Brainmeasures is one hundred percent guaranteed to offer you a more concrete understanding about how you can solve the problems within an organization through proper financial analysis. It can offer you the most detailed company controllers financial analysis training because the entire online certification program covers information related to the different methods used in effectively carrying out the financial analysis process and using its results to formulate sound and profitable decisions. If you get your certificate in this field, then it will be easier for you to make great contributions to the success of an organization.
Highlights of the Financial Analysis Certification for Company Controllers Offered by Brainmeasures
The financial analysis certification program offered by Brainmeasures which is primarily designed for company controllers can definitely help you in honing your skills and in improving your knowledge about the field so you will never have a difficult time performing your duties and responsibilities as a controller. Included in the Brainmeasures financial analysis certification program for company controllers are the following vital topics:
Beneficiaries of the Financial Analysis Certification for Company Controllers Program
Basically, the individuals and professionals who can receive the greatest benefits from the financial analysis certification program for company controllers offered by Brainmeasures are aspiring and existing controllers who wish to gain a full understanding about everything related to financial analysis in order for them to successfully carry out all their tasks and responsibilities. The financial analysis certification course, however, is not only beneficial for controllers but for other professionals as well especially those who are part of the finance and accounting department of an organization. These include credit managers, tax managers, payroll managers, accounting managers, accounts payable managers and cost accounting managers.
Job Opportunities after Completing a Financial Analysis Certification Course for Company Controllers
Being a holder of the financial analysis certification course offered by Brainmeasures can open up a wide array of employment opportunities for you. Among the many jobs that may delight those who have completed their financial analysis certification course for company controller are the following:
Expected Salary for Holders of Financial Analysis Certification for Company Controllers
If you are one of those who have completed a financial analysis certification course designed for company controllers, then be aware that this certification will be a huge help in increasing your salary. The average annual salary for company controllers who have also received their financial analysis certification is $79,000. You can expect this amount to grow depending on your employer and the specific location where you decide to practice your profession.
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Using your transcript ID you can showcase your results online to your employer
by just going to Brainmeasures home page, your complete result report will appear.
6.Result Forwarding Facility
Using this feature you can send your scores to your employer and friends by using
through e-mail.


text:
LA COSTA -- He's back!
After suffering a groin injury last summer, John Fitzpatrick rehabilitated the injury for nearly three months before finally returning to the soccer field.
The senior scored his first goal of the season Wednesday, sparking unbeaten La Costa Canyon High to a 3-0 nonleague victory over previously unbeaten Rancho Buena Vista.
"I'm sort of back," Fitzpatrick said. "I feel more relieved than excited because I'm not 100 percent yet."
Fitzpatrick, who made his debut this season Monday in a 1-1 tie with St. Augustine by playing about 15 minutes, took a header from teammate Zach Anderson and directed it into the net for a 2-0 lead with 27:25 to play in the game.
Three minutes later, Fitzpatrick, who played about 20 minutes against RBV, nearly headed in another goal, also off a pass from Anderson, before Johnny Espinoza's shot was eventually saved by Rancho Buena Vista goalie William Whiddon.
"I thought I had that second one," Fitzpatrick said. "I couldn't push off all the way. I guess my rust showed on that one.
"My legs are way behind the rest of my body. It's been horrible to sit and watch everyone else play.
"I'm getting better, but when I step onto the field it feels like my legs have already played 40 minutes."
University of California-bound Fitzpatrick's entry into the game early in the second half, with LCC holding a 1-0 lead thanks to an own goal by the Longhorns (7-1-1) with 34:30 to play, seemed to pump renewed energy into the Mavericks (11-0-1).
They counterattacked the entire half after Whiddon's six saves kept the game scoreless at halftime.
"He's a class keeper," LCC coach Dave Cohen said. "We struggled to break through in the first half. They tried to frustrate us and did a very good job.
"We're like a bike that needs oil. When it runs smoothly, we can be pretty good."
With Fitzpatrick back in the lineup, the Mavericks may not need much more oil to run smoothly.
Whiddon recorded 12 saves to keep the Longhorns from being blown out by intermission, but the own goal followed about seven minutes later by Fitzpatrick's goal signalled the beginning of the end for the visitors.
LCC goalie Matt Gillan was forced to make just one save as the Longhorns failed to penetrate the Mavericks' defense more than just Nick Ilich's shot from 30 yards out that Gillan managed to save just below the crossbar.
"LCC has outstanding team speed and we need to learn how to adjust to that," said RBV coach Dave Whiddon, the father of the team's goalie. "That's one of the top teams in the county.
"I told my team it's not where you start the season, but where you finish it."
Bobby Albert finished the scoring with 20:30 to play off a pass from Clayton Samuels, who was credited with the first goal knocked in by the Longhorns' defense.
La Costa Canyon had five golden scoring chances in the first half. Three were saved by Whiddon and the other two shots hit the crossbar.
"Usually, we're a momentum team," Fitzpatrick said. "The first half we didn't do a good job of that.
"Our hustle paid off in the second half."
So did getting Fitzpatrick into the game in that second half.
Contact staff writer Terry Monahan at (760) 739-6648 or firstname.lastname@example.com .
a ref="Click'> http://www.nctimes.com/nctvarsity/soccerboys/07/stats/event25539.sht ml">Click here for boxscore Â


text:
Last backlog! (But still a cold steep)
I definitely ended up liking this more iced. The roastiness of the base doesn't come through and overpower the peach flavor. There's a slight tartness here too that I liked. It made the whole cup feel juicier and like eating a cool, fresh peach.


text:
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text:
Apartment in Historic Building
Size25 m²
Floor No.1
- Kitchen
- Towels
- Internet/WiFi
- Washer/dryer
- Disabled access
- Dishwasher
- Pets allowed
Accommodation summary
|Kalevankatu D, 00180 Helsinki, Finland
|Property type
|Property ID
High ceilings and large windows allow for a comfortable atmosphere for up to 4 people within the apartment. It includes a snug living area with an L-shaped sofa and a dining table. A fitted kitchen is tucked neatly in the corner of the room and features an oven and microwave among other appliances.
Within a 500-metre distance are a number of bus lines and the Kampin metroasema Metro Station. The Amos Anderson Art Museum is a 5-minute walk away and is the largest private art museum in Finland. Walk for 10 minutes to Railway Square, the Finnish National Theatre and the Museum of Contemporary Art.
A large supermarket and a number of good restaurants can be found on the surrounding streets. The host is happy to have lunch with guests, and can also arrange tours using their personal boat.
House rulesSmoking is only allowed on the patio.
Bed linen and towels are provided.
Please note that the building does not have an elevator (and the apartment is located on the 1st floor).
|Weekly rate for 1 guest
|£ 811
|Monthly rate for 1 guest
|£ 2862
|Price for > 1 guests
|£ 10 per guest/night extra
|Check-in After
|On arrangement
|Check-in before
|On arrangement
|Check-out Before
|On arrangement
|Cancellation Policy
Reviews of this property
We stayed 2 times in the apartment. We went for 5 days to Petersburg and then we came back. We were very satisfied about our stay. We gave the number 6 by accident. The number should be 8. Therefore we give now a 10.
We have had a pleasant stay at the cozy appartement. It is situated in a pleasant area. We could walk easily to the centre. Ville is nice and helpful.
The apartment really has his loft its appeal. You feel immediately comfortable and Ville is a very attentive host. It is well connected by tram and even on foot you are in 10-15 minutes at the port or in the shopping street. I can only recommend it.
Das Appartement hat mit seinem Hochbett wirklich seinen Reiz. Man fühlt sich sofort wohl und Ville ist ein sehr aufmerksamer Gastgeber. Es ist mit der Straßenbahn gut angebunden und selbst zu Fuß ist man in 10-15 Minuten am Hafen oder in der Einkaufsstraße. Ich kann es nur weiterempfehlen.
- Quality assured accommodation
- Every host is verified by telephone
- Secure payment via SSL encryption