text:
|Numéro de publication
|Type de publication
|Numéro de demande
|Date de publication
|31 aoűt 1993
|Date de dépôt
|11 mars 1991
|Date de priorité
|2 oct. 1986
|État de paiement des frais
|Numéro de publication
|Werner H. Mueller, Dinesh N. Khanna, Bernd Hupfer
|Cessionnaire d'origine
|Hoechst Celanese Corporation
|Exporter la citation
|BiBTeX, EndNote, RefMan
|Citations de brevets (8), Référencé par (19), Classifications (22), Événements juridiques (5)
|Liens externes: USPTO, Cession USPTO, Espacenet
This is a divisional of copending application Ser. No. 07/376,684 filed on Jul. 7, 1989, now U.S. Pat. No. 5,021,320, which is a divisional of 06/915,342 filed on Oct. 2, 1986 now abandoned.
This invention relates to polyamides containing the hexafluoroisopropylidene group ##STR1## to protective coatings and to positive photosensitive and radiation sensitive, high temperature, photoresist compositions prepared therefrom and to a method of preparing heat resistant protective coatings and relief structures of such compositions.
Positive photoresist compositions and their use are well known. Generally such photoresists compositions are prepared from alkali-soluble, phenol-formaldehyde novolak resins and light or radiation sensitive o-quinone diazides or naphthoquinone diazides. Examples of such positive photoresists are described in U.S. Pat. Nos. 3,666,473; 4,115,128; and 4,173,470.
Conventional positive novolak resists have limited temperature dimensional stability and are not well suited for modern high temperature, processes, and applications. Heat resistant, negative resists are known in the art and disclosed in U.S. Pat. Nos. 3,957,512; 4,045,223; 4,088,489; Re 30,186 and DE 3411659A1. Also heat resistant positive resists are known and disclosed in U.S. Pat. Nos. 4,093,461; 4,339,521; and 4,395,482. The advantages of positive resists over negative resists are also known in the art which include higher resolution and exposure time stability in the presence of oxygen.
In the industrial application of positive resists, the polymeric component and the photosensitizer are dissolved in an organic solvent or mixture of solvents and applied as a thin film or coating to a substrate suitable for the desired application.
The polymeric component of these photoresist formulations is soluble in aqueous alkaline solutions, but the sensitizer acts as a dissolution rate inhibitor with respect to the polymer. Upon exposure of selected areas of the coated substrate to actinic radiation, the sensitizer undergoes a radiation induced structural transformation and the exposed areas of the coating are rendered more soluble than the unexposed areas. This difference in solubility rates causes the exposed areas of the photoresist coating to be dissolved when the substrate is immersed in alkaline developing solution leaving the unexposed areas substantially intact, thus producing a positive relief pattern on the substrate.
In most applications, the exposed and developed substrate will be subjected to treatment by a substrate-etchant solution. The photoresist coating protects the coated areas of the substrate from the etchant and thus the etchant is only able to etch the uncoated areas of the substrate, which in the case of a positive photoresist, corresponds to the areas that were exposed to actinic radiation. Thus, an etched pattern can be created on the substrate which corresponds to the pattern of the mask, stencil, template, etc., that was used to create selective exposure patterns on the coated substrate prior to development.
The relief pattern of photoresist on substrate produced by the method described above is useful for various applications including, for example, as an exposure mask or a pattern such as is employed in the manufacture of miniaturized integrated electronic components or the manufacture of a printing plate.
The properties of a photoresist composition which are important in commercial practice include the solubility of the resist in the application solvent, the photospeed of the resist, development contrast, resist resolution, resist adhesion, dimensional stability at elevated temperature and abrasion resistance.
Photospeed is important for a photoresist, particularly in applications where a number of exposures are needed, for example, in generating multiple patterns by a repeated process, or where light of reduced intensity is employed such as in projection exposure techniques where the light is passed through a series of lenses and mono-chromatic filters. Thus, high, controlled photospeed is particularly important for a resist composition employed in processes where a number of multiple exposures must be made to produce a mask or series of circuit patterns on a substrate. Control of the photospeed is extremely important in order to produce high resolution relief patterns in microcircuitry--a photospeed too high can result in narrowing the processing conditions.
Resist resolution refers to the capability of a resist system to reproduce the smallest equally spaced line pairs and intervening spaces of a mask which is utilized during exposure with a high degree of image edge acuity in the developed exposed spaces. In many industrial applications, particularly in the manufacture of miniaturized electronic components, a photoresist is required to provide a high degree of resolution for very small line and space widths (on the order of a micron or so).
The ability of a resist to reproduce very small dimensions, on the order of a micron or so, is extremely important in the production of large scale integrated circuits on silicon chips and similar components. Circuit density on such a chip can be increased, assuming photolithography techniques are utilized, by increasing the resolution capabilities of the resist.
Various attempts have been made in the prior art to produce high temperature positive resists possessing the above desired properties. For example, U.S. Pat. No. 4,093,461 discloses a heat resistant, positive resist composition comprising a quinone or naphthoquinone diazide and the polycondensation product of an aromatic dianhydride and an aromatic diamine. The properties of the positive resist of the patent are discussed in U.S. Pat. No. 4,395,482 (column 1, lines 46-64). There it is pointed out that the positive resist composition of U.S. Pat. No. 4,093,461 has limited storage life, insufficient stability to alkaline etching solutions and relatively small differences in solubility between the exposed and unexposed portion of the resist.
U.S. Pat. Nos. 4,395,482 and 4,339,521 disclose positive resist compositions containing oligomer and/or polymeric precursors of polyoxazoles in the form of a polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. These references specifically disclose a poly(benzidine isophthalamide). These positive resist compositions are said to have long storage life, high heat resistance, good processability and suitability of applications in microelectronics; i.e., the preparation of finely structured patterns. They however have several disadvantages which include low solubility in the commonly used solvents and low photospeed relative to the resists of this invention.
The present invention provides an improved high temperature positive photoresist composition with improved photospeed, improved solubility in the typical organic solvents used in the preparation of photoresist and improved adhesion properties while at the same time they have good long term storage stability, in the dry and solution form, and high resolution. Additional advantages of the photoresists of this invention are higher transparency and low toxicity (the benzidine of Example 1 of U.S. Pat. No. 4,395,482 is listed as a carcinogen and it is difficult to prepare). It has been noted that the poly(benzidine isophthalamide) of the '482 patent is not gel free when prepared and; it must be filtered prior to isolation from the reaction solvent. Also a photoresist solution of this poly(benzidine isophthalamide) forms gels upon standing which is indicative of storage instability of the resist solution.
This invention is that of a novel polyamide typically prepared by the condensation of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl) propane with a dibasic acid chloride and mixtures of dibasic acid chlorides. A portion of the hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl) propane may be replaced with another diamine comonomer optionally containing less hydroxy substituents in order to reduce the solubility of the polymer in alkaline aqueous photoresist developer and increase the polymer solubility in solvent. Alternately, the developer solubility of the polyamide can be reduced or its solvent solubility increased by neutralizing the solubilizing effect of the hydroxy groups in the preformed polymer by converting them to a less developer soluble moiety; for example, by acylating a portion of the hydroxy groups in the preformed polymer. The use of non-hydroxy comonomers or post-polymerization neutralization of the hydroxy groups provides another method of controlling the resist's photospeed.
The invention also is that of a positive high temperature photoresist composition comprising the above described polyamide and o-quinone and/or o-naphthoquinone diazide photosensitizer or radiation sensitizer.
It has also been found that the the solvent solubility and photospeed of the resists of this invention may be controlled by employing a mixture of dibasic acid chlorides in the preparation of the polyamide component of the resist and/or a mixture of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)-propane and another diamine. Particularly preferred dibasic acid chlorides useful for this purpose are isophthaloyl chloride and hexafluoro-2,2-bis(4-chlorocarbonylphenyl)-propane. Isophthaloyl chloride when polymerized with hexafluoro-2,2-bis(3-amino-4-hydroxyphenylpropane produces a polyamide which when employed in a positive photoresist composition gives a resist having an extremely high photospeed. Preferably, the isophthaloyl chloride is used in admixture with another dibasic acid chloride and polymerized with hexafluoro-2,2-bis-(3-amino-4-hydroxyphenyl)-propane. Preferred dibasic acid chloride admixtures are 30 to 70 mole percent of isophthaloyl dichloride with 70 to 30 percent terephthaloyl chloride or hexafluoro-2,2-bis-(4-chlorocarbonyl-phenyl)-propane; preferably 50 mole percent isophthaloyl chloride; said molar percentages being based upon the dibasic acid chloride content of the mixture.
This invention, therefore, provides a method for making a positive photoresist composition of predetermined solvent solubility and photospeed. The photosensitivity of the resists of the invention can be controlled, for example, from about 10 mJ/cm2 to about 300. This result is achieved by controlling the polyamide component's composition. Surprisingly, the hexafluoroisopropylidene group when used as a linking group in the diamine component of the polyamide provides increased photospeed and solvent solubility while in the dibasic acid chloride it reduces the photospeed and increases solvent solubility.
This positive resist after coating and exposure in the conventional manner can be developed in alkaline aqueous photoresist developer to provide fine structured relief structures suitable for use in microelectronic and printing applications and the photospeed of the resist can be controlled to suit the particular application at hand. The photoresist has high thermal stability (250°-350° C.), improved photospeed, improved solubility in the commonly used coating solvents and superior adhesion.
The invention also relates to a method of improving the heat resistance of such fine structured relief patterns by thermally curing the developed photoresist to convert the polyamide into a polybenzoxazole which is thermally stable at temperatures up to 550° C.
The polyamides of the invention also are useful in producing high-heat, protective coatings per se because of their increased solubility in commonly used solvents, superior adhesion and superior heat resistance.
This invention is that of a high temperature polyamide containing the hexafluoroisopropylidene group. These polyamide have the following general formula (1): ##STR2## where: X is the divalent group: ##STR3## a=0.10 to 0.50 mole fraction b=0.25 to 0.50 mole fraction
c=0.00 to 0.40 mole fraction
d=0.00 to 0.25 mole fraction
a+b+c+d=1, said mole fractions being based upon the total moles of X+Y+Z in the polymer.
n is an integer from about 2-500; preferably 20-300 and for photoresist application most preferably about 5-200.
wherein R is independently selected from hydrogen and a substituted or unsubstituted aliphatic or aromatic monovalent group having up to nine carbons; preferably, R is selected from hydrogen, methyl, ethyl and phenyl.
The groups Y and Z are unsubstituted or a substituted aliphatic, aromatic or alicyclic divalent group having up to 60 carbons and mixtures thereof.
The divalent group Y is independently selected from methylene and difluoromethylene and both the divalent groups Y and Z are independently selected from polydifluoromethylene of 2 to 12 carbons; a substituted or unsubstituted polymethylene of 2 to 12 carbons; cyclohexylene; cyclohexenylene; piperazinylene; arylene; biarylene; napthalenylene; and polyarylene wherein the linking group (hereinafter W) between the arylene rings is independently selected from a single carbon to carbon bond; methylene; polymethylene of 2 to 12 carbons; difluoromethylene, polydifluoromethylene from 2 to 12 carbons; hexafluoroisopropylidene; isopropylidene; oxy; thio; sulfinyl; sulfonyl; sulfonyldioxy; sulfonamido; carbonyl; ##STR4## cyclohexylene; cyclohexenylene; naphthalenylene and mixtures thereof.
The substituent A is independently selected from substituted or unsubstituted: alkyl of 1 to 8 carbons, phenyl and naphthyl.
The group D is independently selected from: oxy, thio, carbonyl, oxycarbonyl, sulfonamido, sulfinyl, sulfony, sulfonyldioxy, benzenedicarbonyl, benzenedioxycarbonyl ##STR5##
The integer n' is 1 to 25.
The integer n" is 1 to 12.
The terms aromatic and alicyclic as used herein include heteroaromatics and hetero-alicyclics wherein one or more of the carbon atoms have been replaced with --O--, --S--, or --N-- atoms.
The term polyarylene is used herein to describe the divalent group having the formula: ##STR6## wherein W is the linking groups identified above and it is independently selected. The integer n"' is 0, 1, 2 or 3 with the proviso that when n"' is zero than W is not a carbon to carbon bond.
The hydrogen atoms of the divalent group Y may be substituted with compatible substituents. Exemplary substituents include chloro, bromo, fluoro, alkyl from 1 to 6 carbons, perfluoroalkyl from 1 to 6 carbons, substituted or unsubstituted aryl of 6 to 12 carbons, alkyl or aryl carboxylic esters of 2 to 9 carbons, alkoxy of 1 to 6 carbons, aryloxy of 6 to 10 carboons, acylamino of 1 to 6 carbons, substituted or unsubstituted alkylaryl of 7 to 12 carbons and substituted or unsubstituted arylalkyl of 7 to 12 carbons.
The hydrogen atoms of the divalent group Z may also be substituted with compatible substituents. Exemplary substituents include hydroxy, chloro, bromo, fluoro, alkyl from 1 to 6 carbons, perfluoroalkyl from 1 to 6 carbons, substituted or unsubstituted aryl of 6 to 12 carbons, alkyl or aryl carboxylic esters of 2 to 9 carbons, alkoxy of 1 to 6 carbons, aryloxy of 6 to 10 carbons, acylamino of 1 to 6 carbons, substituted or unsubstituted alkylaryl of 7 to 12 carbons and substituted or unsubstituted arylalkyl of 7 to 12.
Preferably, Y is at least 70 mole percent of an aromatic divalent group. More preferably, Y is selected from phenylene and hexafluoro-2,2-bis(phenyl)-propane and mixtures thereof. Most preferably Y is mixture of meta-phenylene, para-phenylene and hexafluoro-2,2-bis(para-phenyl)-propane comprising about 20-100 mole percent of the meta-phenylene group, more preferably about 30-70 mole percent, most preferably about 40-60 mole percent of the meta-phenylene group. Particularly preferred mixtures of the divalent group Y are:
1. an equal molar mixture of meta-phenylene and paraphenylene;
2. an equal molar mixture of meta-phenylene and hexafluoro-2,2-bis(para-phenyl)-propane;
3. a mixture of 50 mole percent meta-phenylene, 25 mole percent para-phenylene and 25 mole percent of hexafluoro-2,2-bis(p-phenyl)-propane.
4. a equal molar mixture of meta-phenylene and para-phenylene and hexafluoro-2,2-bis(para-phenyl)-propane.
The above molar percentages being based up the total moles of the group Y in the polymer.
Preferably Z is at least 70 mole percent of an aromatic divalent group and more preferably Z is: ##STR7## wherein R' and R" are independently selected from hydrogen, hydroxy, lower alkyl of 1 to 6 carbons, lower alkoxy of 1 to 6 carbons, aryloxy of 6 to 10 carbons, chloro, fluoro, nitro, and carboxylic aliphatic or aromatic ester having up to 10 carbons; with the proviso that when R'" is the hexafluoroisopropylidene group, R' and R" are not both hydroxy.
wherein R'" is independently selected from a carbon to carbon bond, methylene, a polymethylene having from 2 to 16 carbons, isopropylidene, difluoromethylene, a polydifluoromethylene having 2 to 12 carbons, sulfonyl, sulfinyl, sulfur, oxygen, carbonyl, oxycarbonyl, hexafluoroisopropylidene benzenedicarbonyl and benzenedioxycarbonyl.
Most preferably Z is: ##STR8##
Since the preparation of the polyamides of this invention can be conducted by a random polymerization procedure, it is apparent that the general formula (1) is intended to represent the average molecular configuration of the polyamides of this invention and that the divalent group Z cannot be methylene or difluoromethylene.
The polyamides of the invention can be prepared by the condensation of approximately equal molar quantities of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)-propane and a dibasic acid chloride, preferably a mixture of such acid chlorides. Optionally, up to about 80 mole percent preferably up to about 50 mole percent and more preferably about 30 mole percent of the above hexfluoro-2,2-bis(3-amino-4-hydroxyphenyl)-propane monomer may be replaced with another diamino comonomer; optionally containing less hydroxy substituents in order to control the photospeed of positive resist compositions containing the polyamide. Examples of such comonomers which may be used are m-phenylene diamine; p-phenylene diamine; 4,4'diaminodiphenyl ether; 3,3'-diaminodiphenyl ether; 3,4'-diaminodiphenyl ether; 1,3-bis-(aminophenoxy)benzene (m-APB); 1,4-bis(aminophenoxy)benzene (p-APB); benzidine; 3,3'-dimethoxy benzidine; 3,3'-dimethyl benzidine; 3,3'-dihydroxy benzidine; 3,3'-diaminodiphenyl methane; 4,4'-diaminodiphenyl methane; 4,4'-diaminodiphenyl propane; 3,3'-diaminodiphenyl sulfone; 4,4'-diaminodiphenyl sulfone; 4,4'-diaminodiphenyl sulfide; 3,3'-dihydroxy-4,4'-diaminodiphenyl sulfone; bis-(3-hydroxy-4-aminophenyl)methane; 3,3'-dihydroxy- 4,4'-diaminobenzophenone; α,α'-bis(aminophenyl)p-diisopropylbenzene; 1,3-bis[4(4-aminophenoxy)-α,α'-bistrifluoromethyl]benzene; 2,2-bis[4-(4-aminophenoxy)-phenyl]hexafluoropropane; hexafluoro-2,2-bis-(3-amino-4-methylhexafluoro-2,2-bis-(4-aminophenyl)propane; hexafluoro-2,2-bis-(3-aminophenyl)propane; 1-2-bis(3-aminopropoxy)ethane; m-xylylenediamine; p-xylylenediamine; bis-(4-aminocyclohexyl)methane; hexamethylenediamine; octamethylene diamine; decamethylene diamine; dodecamethylene diamine; 1,4-cyclohexane diamine; bis(3-aminopropyl)sulfide; N-methyl-bis(3-aminopropyl)amine; 4,4'-bis(p-aminophenoxy)diphenyl sulfide; 4,4'-bis(3"-aminophenoxy)diphenyl sulfide; 4,4'(3"-aminophenoxy-(4'-aminophenoxy)-diphenyl sulfide; 4,4'-bis(p-aminophenoxy) diphenyl sulfone; 4,4'-bis-(3"-aminophenyl sulfone; 2,2-bis-[4'-p-aminophenoxy)phenyl] propane; 2,2-bis-[3'p-aminophenoxy)phenyl]propane; 1,1-bis-[4'(p-aminophenoxy)phenyl]ethylbenzene and mixtures thereof.
Alternately, the polyamide can be modified after polymerization for example, by acylating a portion of the hydroxyl groups in the preformed polymer with a carboxylic aliphatic or aromatic acylating agent having up to 10 carbons such as acetic anhydride, propanoic anhydride, benzoyl chloride, and diketene.
The diamino and dibasic acid chloride monomers useful in the preparation of the polyamides of this invention can be prepared by known methods; see, for example, Synthesis of Polymer Intermediates Containing the Hexafluoroisopropylidene Group, Lau, K. S.; Landis, A. L.; Kelleghan, W. J. and Beard, C. D.; J. Polym. Sci; Vol. 20, page 2381-2391 (1982) which is incorporated herein by reference.
The polyamides of the invention are prepared by known polymerization methods; typically by the condensation of a diamine and acid chloride; see, for example, Prepartion of Fully Aromatic Polybenzoxazoles, Kubota, T.; Nakanishiu, R.; Polymer Letters, Vol. 2, 655-659 (1964) which is incorporated herein by reference.
The polyamides of this invention are prepared from hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)propane or its reactive equivalent for e.g. hexafluoro-2,2-bis(3-amino-4-methoxyphenyl)propane wherein the hydroxy group may be replaced by an alkoxy or aryloxy containing up to ten carbon atoms for example, ethoxy, propoxy, butoxy, phenoxy etc. This diamine is used in an amount of from about 20 to 100 mole percent, preferably about 50 mole percent and most preferably about 70 to 100 mole percent of the diamine components present in the polymer.
Typical acid chlorides useful in the preparation of the polyamides of the invention are the acid chlorides of isophthalic acid; terephthalic acid; 4,4'-hexafluoro isopropylidene dibenzoic acid; 1,4-cyclohexane dicarboxylic acid; pentanedioic acid; hexanedioic acid; phthalic acid; 2,4-furandicarboxylic acid; 1,4-phenylene-diethanoic acid; 4,4'-biphenyl dicarboxylic acid; 1,1-bis(4-carboxyphenyl)-1-phenyl-2,2,2-trifluoroethane; 4,4'-dicarboxy diphenyl ether; bis-(4-carboxyphenyl)-methyl phosphane oxide; 4,4'-dicarboxyltetraphenylsilane; bis(4-carboxyphenol)-sulfone; 5-tertiary butyl isophthalic acid; 5-bromoisophthalic acid; 5-fluoro-isophthalic acid; 5-chloroisophthalic acid; 2,2-bis-(p-carboxyphenyl)propane, 4,4'(p-phenylenedioxy) dibenzoic acid, 2,6-naphthalene dicarboxylic acid and mixtures thereof.
The polyamides of the present invention are useful in the preparation of positive photoresist compositions. These resist compositions comprise a polyamide as heretofore described and a radiation or light sensitizer. The polyamide and sensitizer are disssolved in a suitable solvent and applied to the desired substrate. The procedures for the preparation of resist are well known.
Similarly, the use of o-quinone diazides is well known to the skilled artisan as demonstrated by Light Sensitive Systems, Kosar, J.: John Wiley & Sons, New York, 1965 in Chapter 7.4 which is also incorporated herein by reference. These sensitizers which comprise a component of the resist compositions of the present invention are selected from the group of substituted naphthoquinone diazide sensitizers which are conventionally used in the art in positive photoresist formulations. Such sensitizing compounds are disclosed, for example, in U.S. Pat. Nos. 2,797,213; 3,106,465; 3,148,983; 3,130,047; 3,201,329; 3,785,825; and 3,802,885. Useful photosensitizers include naphthoquinone-(1,2)-diazide-5-sulfonyl chloride, and naphthoquinone-(1,2)-diazide-4-sulfonyl chloride condensed with phenolic compounds such as hydroxy benzophenones.
Additives such as colorants, dyes, anti-striation agents, plasticizers, adhesion promoters, speed enhancers, solvents and such surfactants as non-ionic surfactants may be added to the solution of polyamide, sensitizer and solvent before the solution is coated onto a substrate.
Examples of dye additives that may be used together with the photoresist compositions of the present invention include Methyl Violet 2B (C.I. No. 42535), Crystal Violet (C.I. 42555), Malachite Green (C.I. No. 42000), Victoria Blue B (C.I. 44045) and Neutral Red (C.I. No. 50040) at one to ten percent weight based on the combined weight of polyamide and sensitizer. The dye additives help provide increased resolution by inhibiting back scattering of light off the substrate.
Anti-striation agents may be used up to five percent weight level, based on the combined weight of polyamide and sensitizer.
Adhesion promoters which may be used include, for example, beta-(3,4-epoxy-cyclohexyl)-ethyltrimethoxysilane; p-methyldisilane-methyl methacrylate; vinyltrichlorosilane; and y-amino-propyl triethoxysilane up to a 4 percent weight level, based on the combined weight of polyamide and sensitizer.
Speed enhancers that may be used include, for example, picric acid, nicotinic acid or nitrocinnamic acid at a weight level of up to 20 percent, based on the combined weight of polyamide and sensitizer. These enhancers tend to increase the solubility of the photoresist coating in both the exposed and unexposed areas, and thus they are used in applications when speed of development is the overriding consideration even though some degree of contrast may be sacrificed; i.e., while the exposed areas of the photoresist coating will be dissolved more quickly by the developer, the speed enhancers will also cause a larger loss of photoresist coating from the unexposed areas.
Typical commercial solvents employed in the art may be used preparing the resist compositions of this invention. The amount of solvent used in the preparation of the resist solution may range up to about 95% by weight of the solution. The polyamides of the prior art have limited solubility in N-methylpyrrolidone and dimethylacetamide whereas the polyamides of the present invention have enhanced solubility in those solvents and additional solvent acceptable for commercial use. Typical useful solvents are N-methylpyrrolidone, dimethylacetamide, propylene glycol methyl ether, methylethyl ketone, cyclohexanone, butyrolactone and mixtures thereof; preferred solvents are N-methylpyrrolidone and propylene glycol methyl ether.
The prepared resist solution, can be applied to a substrate by any conventional method used in the photoresist art, including dipping, spraying, whirling and spin coating. When spin coating, for example, the resist solution can be adjusted as to the percentage of solids content in order to provide coating of the desired thickness given the type of spinning equipment utilized and the amount of time allowed for the spinning process. Suitable substrates include silicon, aluminum or polymeric resins, silicon dioxide, doped silicon dioxide, silicon nitride, tantalum, copper, polysilicon, ceramics and aluminum/copper mixtures.
The photoresist coatings produced by the above described procedure are particularly suitable for application to thermally grown silicon/silicon dioxide-coated wafers such as are utilized in the production of microprocessors and other miniaturized integrated circuit components. An aluminum/aluminum oxide substrate can be used as well. The substrate may also comprise various polymeric resins especially transparent polymers such as polyesters.
Suitable developing solutions for the radiation sensitive composition of the present invention are aqueous solutions of inorganic alkaline compounds such as those of sodium silicate, potassium silicate, sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium phosphate, sodium monohydrogen phosphate, ammonium phosphate, ammonium monohydrogen phosphate, sodium metasilicate, sodium bicarbonate, ammonia, etc., with a suitable concentration of these compounds being between about 0.1 about 10, more preferably between 0.5 and 5%, by weight. Specific examples of developer solutions are disclosed in U.S. Pat. Nos. 3,110,596; 3,173,788; 3,586,504; etc.
Such an alkaline solution can also contain certain organic solvents such as alcohols (e.g., methanol, ethanol, benzyl alcohol, etc.) as well as a surface active agent (e.g., sodium alkylnaphthalene sulfonate, sodium lauryl sulfate, etc.) depending on the requirements.
After the resist composition solution is coated onto the substrate, the substrate is baked at approximately 80° to 105° C., preferably at about 90° C. until substantially all the solvent has evaporated and only a thin coating of photoresist composition on the order of a micron in thickness remains on the substrate. The coated substrate can then be exposed to actinic radiation in any desired exposure pattern, produced by use of suitable masks, negatives, stencils, templates, etc.
The exposed resist-coated substrates are next substantially immersed in alkaline developing solution. The solution is preferably agitated, for example, by nitrogen burst agitation.
The substrates are allowed to remain in the developer until all, or substantially all, of the resist coating has dissolved from the exposed areas.
After removal of the coated wafers from the developing solution, a post-development heat treatment or bake may be employed to increase the coating's adhesion and chemical resistance to etching solutions and other substances. In fact, the resist formulations of the present invention has excellent adhesion to substrates such as silicon wafers, aluminum plates, glass, polyester films etc. No adhesion promotor was necessary for the photoresist processing. The post-development heat treatment can comprise the oven baking of the coating and substrate below the coating's softening point; at a temperature from about 80°-375° C., preferably at 225°-350° C. The heat treatment time ranging from 0.5 to about 2.0 hours. Typically, the glass transition temperature (Tg) of the polyamide prior to heat treatment is in the order of about 250°-300° C. and after heat treatment and conversion to a polyoxazole structure about 300°-350° C., typically about 305° C.-325° C.
After curing the developed substrate may be treated with a buffered hydrofluoric acid or alkaline etching solution. The resist composition of the invention are resistant to both acid and base etching solutions and provide effective protection for the unexposed--resist-coated areas of the substrate. The developed, cured photoresist provides relief structures of excellent resolution and high thermal stability.
Although the above description is in terms of a wet-etching process, the relief patterns of the invention may be used in both wet and dry etching processes. The resulting structures are particularly useful insulating layers in microcircuitry applications, as masks in vapor depositions processes, ion implantation processes etc. Similarly, the photoresists of this invention may be used in the preparation of printing plates, lithographic proofing applications, lithographic transfer foils and other similar applications. The preparation of printing plates using positive photoresists is well known in the art; see e.g. U.S. Pat. No. 3,493,371, the teachings of which are incorporated by reference. They may be used as general protective coatings in numerous other applications readily apparent to one skilled in the art; e.g. the high solubility of the polyamides of the present invention make them particularly suited for high temperature protective coatings per se as well as in photoresist applications. In a typical coating application, a coating composition comprising about 5-30 weight percent of the polyamide of the invention in solution is applied to a substrate. Antioxidants, U.V. stabilizers, adhesion promoters, colorants, flame retardants, fillers and other auxillary agents up to about 20 weight percent may be optionally employed in the coating composition. The solvent is removed at a suitable temperature generally about 90°-150° C. and a reduced pressure may be employed to facilitate the solvent removal. After removal of the solvent, the polyamide coated substrate is heated to about 200°-350° C. for about 0.5-6.0 hours and the polyamide is converted into a polyoxazole of high heat resistance.
The following specific examples will provide detailed illustrations of the methods of producing and utilizing compositions of the present invention. These examples are not intended, however, to limit or restrict the scope of the invention in any way and should be construed as providing conditions, parameters of values which must be utilized exclusively in order to practice the present invention. In the following examples the term Dark Film Erosion Rate is abbreviated to Erosion Rate.
The polyamide of the following formula was synthesized by the solution polycondensation method: ##STR9## where Y=50/50 equal molar mixture of isophthaloyl/terephthaloyl radicals and n was approximately 200.
To a solution of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)propane (0.01 mole=3.66 gm) in dimethyl acetamide (16.5 ml) and pyridine (3 ml) was added a 50/50 mixture of isophthaloyl chloride and terephthaloyl chloride (0.0055 moles isophthaloyl chloride=1.1165 gm) and (0.0055 moles terephthaloyl=1.1165 gm) in cyclohexanone (6.5 ml) dropwise with rapid stirring at -10° to -15° C. for 30 min. After stirring over night (24 hrs) at room temperature, the resulting solution was poured into an ice water mixture to precipitate the polymer. The polyamide was filtered, washed with water, and dried under vacuum at 90° overnight.
The yield was almost quantitative and inherent viscosity of the polymer was 0.40 dlg-1 in dimethyl acetamide (0.5% conc. 25° C.).
A photoresist solution was prepared by dissolving 10 parts of polybenzoxazole precursor of Example 1 and 5 parts by weight of photosensitizer (mixed tris ester of trihydroxybenzophenone) and 0.08 parts by weight of red dye in 12 parts by weight of methylethyl ketone and 8.0 parts by weight of propylene glycol methyl ether. The solution was filtered and then roller coated on an anodized aluminum plate. After drying for 3 minutes at 90° C., a resist film having thickness of 2-3 um was obtained. This film was covered with a photomask having a stripped pattern so that the film and the photomask were in tight contact. Then UV light was irradiated thereon for 60 seconds by the use of mercury vapor lamp of 200 W. The intensity of the UV light at the film surface was 5 mw/cm2 at a wavelength of 365 nm. After the irradiation, the coating was developed using 1:5 alkaline developer (AZ Developer):water mixture. The developed plate was washed with water to obtain a fine, uniform relief pattern having a minimum line width of 3 um. The developed plate was then given a post-development heat treatment at 250° C. for 1 hour.
The pattern obtained showed no blurring or loss of resolution after heating for up to 6 hours at a temperature of 250° C. Further, microcracks were not observed in the pattern after development or thermal treatment although some film thickness reduction was noticed after the heat treatment.
A photoresist solution was prepared by dissolving 10 parts of polybenzoxazole precursor, the polycondensation product of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)propane and terephthaloyl dichloride which was prepared in accordance with the general procedure of Example 1, and 5 parts by weight of photosensitizer (mixed tris ester of trihydroxybenzophenone) and 0.08 parts by weight of a red dye (disperse red 179) in 12 parts by weight of methyl ethyl ketone and 8.0 parts by weight of propylene glycol methyl ether. The formulation was then filtered and roller coated on an anodized aluminum plate. The coated plate was dried at 90° C. for 3 minutes to obtain a resist film having thickness of 2-3 um. The film was then covered with a photomask having a stripped pattern so that the film and the photomask were in tight contact. Then UV light was irradiated thereon for 60 seconds using a mercury vapor lamp of 200 w. The intensity of the UV light at the film surface was 5 mw/cm2 at a wavelength of 365. After the irradiation, the photoresist was developed using a 1:5 AZ alkaline developer:water solution and rinsed with water to obtain a relief pattern having a minimum line width of 2 um. The developed plate was then given a post heat treatment at 250° C. for 1 hour.
The pattern obtained showed no blurring or loss of resolution after heating for up to 6 hours at a temperature of 250° C. Further, microcracks were not observed in the pattern after development or thermal treatment.
The following example illustrates the acetylation of the hydroxyl groups in a preformed polyamide of the invention (the condensation products of hexafluoro-2,2-bis(3-amino-4-hydroxy-phenyl)propane and a 50/50 mixture of isophthaloyl and terephthaloyl chloride. The polyamide copolymer, 4.96 gm (0.01 mole) was dissolved in 25 ml of dimethyl acetamide in a 100 ml, three-neck flask equipped with a stirrer, condenser, and thermometer, and heated to 100° C. under agitation. Then 0.2 gm of acetic anhydride was added and the reaction mixture was heated at 100° C. for 7 hours. The reaction mixture was drowned into ice water. The polymer obtained was a white fibrous solid. It was washed with water and dried in a vacuum oven at 100° C. overnight. Approximately 20% of the polymer's hydroxyl groups were esterified.
The following table illustrates the improved solubility of the polyamide precursers of this invention. The data is quantitative. Polymer A is a condensation product of hexafluoro-2,2-bis-(3-amino-4-hydroxyphenyl)-propane with 50/50 molar mixture of isophthaloyl chloride and terephthaloyl chloride. Polymer B is the condensation product of 3,3'-dihydroxy-benzidine and isophthaloyl chloride. Polymer A was prepared in accordance with the procedure of Example 1. Polymer B was prepared in accordance with the polymerization procedure of Example 1 of U.S. Pat. No. 4,395,482.
TABLE 1______________________________________ Solubility - weight percentSolvent Polymer A Polymer B______________________________________N-methylpyrrolidone 3.0. <2.0.*Dimethylacetamide 3.0. <2.0.*Propylene glycol methyl ether 3.0. insolubleMethylethyl ketone 2.0. "Cyclohexanone 2.0. "Butyrolactone 2.0. "______________________________________ *not completely dissolved, gels present
The following comparative examples were prepared in order to illustrate the improved positive photoresist compositions obtained using the polyamide of this invention over those of prior art.
Photoresist compositions were prepared using the polyamides (polyoxazole precursors) of the present invention prepared substantially in accordance with Example 1 of the instant application and a poly(benzidine isophthalamide) which was prepared substantially in accordance with Example 1 of U.S. Pat. No. 4,339,521.
The photosensitivity (speed) of each resist composition was evaluated using the following general procedure. Bake time, spinspeed and other experimental conditions and results for each experiment are reported below.
The photoresist is spin-coated on several silicon wafers at a constant, predetermined spin speed ranging from 500 to 1500 rpm. The wafers are then baked at 90° C. for 30-45 minutes to remove the solvent. The initial film thicknesses of coated resist are measured by a Rudolf film Thickness Monitor. Photosensitivity is measured by generating a contrast curve as described (C. G. Willson in "Introduction to Microlithography," Chapter 3, p. 105, American Chemical Society, Washington, D.C. 1983). One plots film thickness loss after one minute development versus the logarithm (1 n) of the UV exposure dose. Film thickness is monitored by laser interferometry using the technique described. The resist was then developed using alkaline aqueous developer (AZ Developer, available from American Hoechst Corporation, Somerville, N.J.) diluted with deionized water, at 25.0°±0.5° C. By extrapolation of the plot to total film thickness loss, one obtains the photosensitivity value (mJ/cm2).
The following photosensitizers were used in these experiments and are identified using the following abbreviations:
(a) Z-2000--a trihydroxybenzophenone--1,2-naphthoquinone diazido-5-sulfonic acid mixed ester.
(b) TOOL--1,2-naphthoquinone-diazido-5-sulfonic acid tris ester of trihydroxy octanophenone.
(c) The sensitizer of Example 1 of U.S. Pat. No. 4,339,521--bis-naphthoquinone-(1,2)-(2)-5 sulfonic acid ester of 2,2-bis-(4-hydroxyphenyl)-propane, hereinafter '521 sensitizer.
A photoresist solution was prepared by dissolving 15 parts of the polyamide of Example 1 of this application and 15 parts of TOOL sensitizer in 70 parts of a mixed solvent consisting of equal parts by weight of propylene glycol methyl ether and N-methylpyrrolidone. The wafer was spincoated with the resulting solution, dried and exposed to a mercury lamp of 200 watts having wavelength of 365 nm as explained above. The developer concentration was 1 part AZ Developer to 2 parts water. The resist was evaluated using the procedure set forth above and the results were:
______________________________________Photosensitivity 76.4 mJ/cm.sup.2Erosion Rate .0...0..0.7 um/min______________________________________
The characteristic curve was normal and resist adhesion to the wafer was excellent.
A photoresist solution was prepared using 16 parts of the polyamide of Example 1 of this application, 8 parts TOOL sensitizer and 76 parts of a 50/50 mixture of N-methylpyrrolidone and propylene glycol methyl ether. The procedure of Example 5 was repeated and the resist developed in a 1:8, AZ Developer:water solution.
The results were:
______________________________________Photosensitivity 74.8 mJ/cm.sup.2Erosion Rate .0...0.19 um/min______________________________________
The characteristic curve was normal and resist adhesion to the wafer was excellent.
A polyamide was prepared substantially in accordance with the procedure of Example 1 of the present invention except, 30 mole percent of the hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)propane monomer was replaced with an equal molar quantity of hexafluoro-2,2-bis(3-amino-4-methylphenyl)-propane. The resulting polyamide was used in the resist formulation of Example 5. The resist was evaluated as in Example 5 except 1:6 AZ Developer:water solution was used.
The results of the evaluation were:
______________________________________Photosensitivity 65 mJ/cm.sup.2Erosion Rate .0...0.16 um/min______________________________________
The characteristic curve was normal and resist adhesion to the wafer was excellent.
The polyamide of Example 7 was evaluated as a photoresist using the same procedure as previously outlined. The resist composition was prepared by dissolving 20 parts of the polyamide of Example 7 and 10 parts of TOOL sensitizer in 70 parts of a 50/50 mixture of propylene glycol methyl ether and N-methylpyrrolidone. The developer solution was 1 part AZ Developer to 2 parts water. The result was as follows:
______________________________________Photosensitivity 81 mJ/cm.sup.2Erosion Rate .0...0..0.7 um/min______________________________________
The polyamide of Example 4 evaluated as a photoresist using the procedure of Example 5. The photoresist composition was 13 parts of the acylated polyamide of Example 4 and 13 parts of TOOL sensitizer dissolved in 74 parts of mixed solvent consisting of equal amounts of N-methylpyrrolidone and propylene glycol methyl ether. The developer concentration was 1 part of AZ Developer to 2 parts water. The results were as follows:
______________________________________Photosensitivity 77.6 mJ/cm.sup.2Erosion Rate .0...0.11 um/min______________________________________
The characteristic curve was normal and adhesion of the resist to the wafer was excellent.
A polyamide was prepared substantially in accordance with the procedure of Example 1 except 30% (molar) of the diamino monomer of Example 1 was replaced with dianisidine as a comonomer and 100% terephthaloyl chloride as the acid chloride.
The photoresist properties were determined using the same procedure as Example 5. The photoresist composition was 15 parts of the polyamide compolymer, 15 parts of TOOL photosensitizer and 70 parts of equal amounts of N-methylpyrrolidone and propylene glycol methyl ether. The developer concentration was 1 part AZ Developer to 2 parts water.
______________________________________Photosensitivity 199.5 mJ/cm.sup.2Erosion Rate .0...0.13 um/min______________________________________
A polyamide was prepared substantially in accordance with the procedure of Example 1 except that 20% (molar) of the diamino monomer of Example 1 was replaced with an equal molar quantity of hexafluoro-2,2-bis (3-amino-4-methylphenyl)-propane and 100% terephthaloyl chloride was used as the dibasic acid chloride.
The resulting polyamide was used to make a photoresist composition by dissolving 15 parts of the polyamide and 15 parts of Z2000 sensitizer in 70 parts of N-methylpyrrolidone. The test wafers were processed according to the same procedure as used in the previous Examples. The developer solution was 1 part AZ Developer to 2 parts water. The results were:
______________________________________Photosensitivity 237.9Erosion Rate .0...0..0.8 um/min______________________________________
The procedure of Example 5 was repeated using 8.5 parts of poly (dihydroxybenzidine isophthalamide) prepared in accordance with Example 1 of U.S. Pat. No. 4,339,521, 8.5 parts of TOOL sensitizer and 83 parts of N-methylpyrrolidone and a coating speed of 500 RPM. The developer solution was AZ Developer at a 1:5 dilution ratio. The results of this experiment were:
______________________________________Photosensitivity 589 mJ/cm.sup.2Erosion Rate .0...0.15 um/min______________________________________
Example 12 was repeated except 6.8 parts of poly (dihydroxybenzidine isophthalamide), 6.8 parts of the '521 sensitizer and 84.4 parts of N-methylpyrrolidone were used. The developer solution was concentrated AZ Developer. The results of this experiment were:
______________________________________Photosensitivity 364 mJ/cm.sup.2Erosion Rate .0...0..0.7 um/min______________________________________
The following Table 2 summarizes the results of these experiments:
TABLE 2______________________________________PHOTOSPEED EVALUATION PHOTOSENSITIVITYEXAMPLE mJ/cm.sup.2______________________________________5 THIS 76.46 INVENTION 74.87 | 65..0.8 | 81..0.9 | 77.610 | 199.511 | 237.912 PRIOR ART 58913 | 364______________________________________
A series of additional experiments were conducted to show the improved properties of the polyamides of this invention using a lithographic technique. The polyamide to sensitizer ratio was varied in these experiments.
The following general procedure was used in this evaluation. The polyamide and photosensitizer were dissolved in solvent and roller coated on an anodized aluminum plate. The solvent was removed by drying at approximately 90° C. to produce a resist film of 2-3 um thick. The film was covered with a GATF Sensitivity Guide photomask consisting of a continuous-tone gray scale with 21 numbered step densities. The Sensitivity Guide was produced in accordance with the specifications in GATF Research Bulletin 215. The increase in density per step is 0.15.
The coated plated was exposed to UV radiation through the Sensitivity Guide, developed in alkaline aqueous developer and scale readings from the Sensitivity Guide developed image were read. Exposed time, developer concentration, development time, and and polyamide to sensitizer ratio are noted below.
The following polyamides were prepared using the procedure of Example 1.
The condensation product of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)-propane and terephthaloyl chloride.
The condensation product of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)-propane and isophthaloyl chloride.
The condensation product of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)-propane with hexafluoro-2,2-bis(4-chlorocarbonylphenyl)-propane.
The condensation product of hexafluoro-2,2-bis(3-amino-4-hydroxyphenyl)-propane and a 50/50 (molar) mixture of the hexafluoro-2,2-bis(4-chlorocarbonylphenyl)-propane and isophthaloyl chloride.
The polyamides of Example 1, 14, 15, 16 and 17 were prepared into photoresist coating compositions. The solvent was a 60/30 weight percent mixture of methylethyl ketone and propylene glycol methyl ether. The photosensitizer was Z-2000 and the developer (AZ Developer) was diluted with one part water. The development time was held constant at 90 seconds as was the UV expose time--90 seconds at 365 nm. The total solids content (polyamide plus sensitizer) was 10 weight percent in each case. The following Table 3 summarizes the results of these tests.
TABLE 3______________________________________ Polyamide/Sensitizer Sensitivity PhotospeedPolyamide Ratio Guide Reading Remarks______________________________________Example 1 1:1 7 good 6:1 21 fastExample 14 1:1 4 slow 6:1 21 fastExample 15 1:1 21 fast 6:1 21 fastExample 16 1:1 2 slow 6:1 6 goodExample 17 1:1 7 good 6:1 21 fast______________________________________
The above listed data shows that the polyamide/sensitizer ration can be varied to control the resist's photospeed. The photospeed of the resist composition based on the polyamide of Example 16 was extremely high. In addition, the resist composition based upon the polyamide of Example 18 gave the best resolution and adhesion of the test group.
The polyamide of Example 16 was used to prepare a photoresist coating composition by dissolving the polyamide in a 10/90 weight percent mixture of methylethyl ketone and propylene glycol methyl ether. The same procedure as reported above (Sensitivity Guide/coated aluminum plate) was used except the exposure time was 120 second and the alkaline aqueous developer was used without dilution with water. The results were as follows:
______________________________________Polyamide:SensitizerRatio Sensitivity______________________________________1:1 32:1 53:1 64:1 65:1 76:1 7______________________________________
The adhesion of the resist coating to the aluminum plate was very high indicating that the polyamide would make an excellent protective coating in other than the photoresist area.
|Brevet cité
|Date de dépôt
|Date de publication
|17 juin 1963
|27 juin 1967
|Du Pont
|Fluorine containing aromatic polycarbonamides
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|Heat resistant polybenzoxazole from bis-((aminohydroxyphenyl)hexafluoroisopropyl)diphenyl ether
|7 juil. 1989
|4 juin 1991
|Hoechst Celanese Corporation
|Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist
|8 juin 1989
|6 aoűt 1991
|Hoechst Celanese Corporation
|Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
|21 mai 1990
|31 déc. 1991
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|Polyamide containing the hexafluoroisopropylidene group
|Brevet citant
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|Polyamide foams and process for their production
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|7 avr. 1999
|27 mars 2001
|Sumitomo Bakelite Company Limited
|Method for the pattern-processing of photosensitive resin composition
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|Sumitomo Bakelite Company Limited
|Resin composition for insulating material, and insulating material produced from said resin composition
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|26 avr. 2005
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|16 sept. 2002
|8 mai 2003
|Recai Sezi
|Photosensitive formulation for buffer coatings, film including the formulation, and method for manufacturing electronics using the formulation
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|Recai Sezi
|Photosensitive formulation for buffer coatings, film containing the photosensitive formulation, and method for fabricating electronics with the photosensitive formulation
|16 sept. 2002
|17 juil. 2003
|Recai Sezi
|Polybenzoxazoles from poly-o-hydroxyamide, novel poly-o-hydroxyamides, preparation processes therefor, and their application in microelectronics
|4 mars 2004
|18 nov. 2004
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|Novel photosensitive resin compositions
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|Classification aux États-Unis
|430/326, 430/192, 528/339, 428/474.4, 430/165, 528/185, 430/191, 428/475.2, 528/335, 430/193, 528/338
|Classification internationale
|Classification coopérative
|Classification européenne
|5 févr. 1997
|Fee payment
Year of fee payment: 4
|2 juin 1999
Owner name: CLARIANT FINANCE (BVI) LIMITED, VIRGIN ISLANDS, BR
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HNA HOLDINGS, INC.;REEL/FRAME:009996/0056
Effective date: 19980914
|2 févr. 2001
|Fee payment
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|3 déc. 2004
|Fee payment
Year of fee payment: 12
|4 mai 2005
Owner name: AZ ELECTRONIC MATERIALS USA CORP., NEW JERSEY
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CLARIANT FINANCE (BVI) LIMITED;REEL/FRAME:015972/0092
Effective date: 20050127


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Evans Library
Florida Tech's library is home to the Applied Computing Center, teaching auditorium and learning pavilion. It also houses hundreds of thousands of books, government documents and technical journals.
Explore Evans Library in Florida Tech's virtual tour!
Florida Tech Trolley!
Travel through campus in less than 6 minutes on the Florida Tech Trolley Express Route! Or take advantage of the free transportation to and from Historic Downtown Melbourne on Friday and Saturday nights!
Check out all the trolley routes, maps and schedules on the Florida Tech Trolley website.
Video: Feels Like Florida Tech
If you're interested in going to Florida Tech, you'll want to watch our new video to see just what it "feels like".
Florida Tech is an Interdisciplinary Science College of Choice
Develop Expertise in Science, Math, Technology and Aeronautics
Florida Tech's interdisciplinary science degree exposes students to a wide range of science courses, giving them considerable flexibility in the design of their major. The aeronautics specialty is designed for science-minded students wishing to pursue a career in the aviation industry. As an interdisciplinary science college, Florida Tech graduates develop well-rounded expertise in science, mathematics, technology and aeronautics.
Professors Dedicated to Their Students
Because of our small class size and close-knit academic community, students at Florida Tech have a huge advantage over another interdisciplinary science college. Students develop strong working relationships with professors during internships, research and other educational experiences.
Florida Tech professors also actively promote student involvement in technical research, often starting as early as the first year of study. One of the best preparations that a student attending an interdisciplinary science college can have if they want to attend graduate school is to become an author on a published paper. Florida Tech professors make this goal attainable. Faculty members have research interests in sustainability, high-energy physics, coastal management, international education, space systems, sports education, athletics and climate change.
High-Tech Laboratory Facilities
An interdisciplinary science college needs to be equipped with state-of-the-art facilities and Florida Tech is up to the challenge. The quality of our facilities and laboratories make Florida Tech an interdisciplinary science university of choice. The 68,500-sq.-ft. F.W. Olin Engineering Complex houses 26 specialized research laboratories and the 37,000-sq.-ft. F.W. Olin Life Sciences Building houses teaching and research laboratories -- all equipped with twenty-first century technology. In addition, interdisciplinary science majors have access to Career Management Services and the Career Resource Center.
Great Florida Location Surrounded by High Tech Companies
You would be hard-pressed to find another interdisciplinary science college with the same sought-after Florida location as Florida Tech. The campus is located on the Space Coast, which is close to thousands of high-tech companies, perfect for research opportunities and internships, as well as future jobs. Florida Tech is a short drive to Orlando tourist attractions and NASA's Kennedy Space Center.
Students enjoy beautiful weather year-round and easy access to 72 miles of Atlantic Coast beaches and the Indian River Lagoon, the most diverse estuary in North America.

subset: commoncrawl


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Used to wearing your Turkey Day sweats to make room for the pumpkin pie binge, but this year you are looking for that perfect party dress to meet the boyfriend's fam? You want to look sophisticated and appropriate without skimping on the beautiful. We hear you. It's easy to imagine but often hard to accomplish.
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Last but not least, is Taylor Swift's hair and make-up. Taylor always looks properly put together with retro-red lips (kind of like an understated Dita Von Tease) and old-school finger waves.
Here's a tutorial on how to do the pin-up doll make-up:
And if you've got straight hair, here's a tutorial on how to get the perfect Taylor Swift bounce!
- What do you think of Taylor Swift's prim, vintage yet classically stunning look? Do you think you might wear something similar? What other artist would you like to see us style analyze? Let us know in the comments!


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Written on: 15/10/2005 by Kelly1026 (153 reviews written)
Nivea Fresh Moisture Hand Cream is the one for you if you normally hate the feeling most hand creams give. It does exactly what it says on the tube! It has a oceanic fragrance(gorgeous!)and feeling,and hydrates instantly and lasts until you wash your hands for more than 3 times.It costs under £3 and lasts for months, it's amazing value-for-money!… Read Full Review
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text:
Is mobile-first becoming a cliché?
Mobile-first is becoming a popular phrase that marketers have been using over the past few months. However, few have truly taken the key steps needed, and continue to see the medium as a great add-on instead of necessity.
Companies such as Starbucks, Disney, Target and Gilt Groupe have done a good job of putting mobile at the forefront of their overall strategies. Mobile should no longer be seen as just another marketing channel to drive consumer engagement ? and over the past few years, the channel has proved to be so much more.
?There are marketers who still view mobile as ?just? another channel,? said New York City-based Chia Chen, senior vice president of mobile practice at Digitas. ?And we find the term ?mobile-first? problematic because it makes it feel like a media channel prioritization issue.
?We prefer to use the term ?mobile at the core,? because mobile is more than just a channel, it?s a technology-driven cultural phenomenon that is changing how people connect with brands and each other,? he said. ?We are finding that more and more marketers are taking the idea of having a ?mobile at the core? strategy seriously.
?These marketers are also asking the hard question of what it means to be ?mobile at the core.? The good news is that, having been through figuring out what being ?digital at the core? is all about, we are in a better position to answer what being ?mobile at the core? is in a more fundamental way than just including mobile in the media plan.?
The right approach?
Similar to ?this is the year of mobile,? marketers have coined the term ?mobile-first.?
However, many still do not know what that exactly entails.
Gone are the days when companies simply dip their toes in the mobile space and test out how the channel can help them boost consumer engagement and interaction.
Mobile has proven to be an integral part of all marketing strategies and a great way to not only help brands deepen the relationship with both new and existing customers, but also further interact with them on a device that is personal to them.
?Many marketing organizations are just beginning to operationalize a mobile first approach to marketing,? Mr. Chen said. ?But, currently, I?d say that American Express, Mead-Johnson Enfamil and Delta have really done good jobs of embracing a mobile at the core approach to marketing.
?By that, I mean that they are integrating how mobile is changing behavior and attitudes into their marketing and channel strategies,? he said. ?For example, American Express?s Twitter Sync program is built around the idea that people are using Twitter on their mobile devices to get ?content snacks.?
?So why not deliver offers via a platform that delivers content that people actually want??
According to Mr. Chen, it is not a matter of ?whether? marketers should have a mobile at the core strategy.
For most brands, it?s a matter of when.
?We believe that mobile will be the dominant way that most people connect to digital in the near future,? Mr. Chen said.
?So, if you?re going to create a digital-centric marketing strategy, it?ll necessarily be mobile at the core,? he said.
Front-seat action
Since mobile, generally speaking, makes up about 10-20 percent of most Web traffic, it is easy to see why it takes a backseat, per Wilson Kerr, vice president of business development and sales at Unbound Commerce, Boston.
?The key is to understand the trendlines and to internalize the pace at which mobile is growing,? Mr. Kerr said. ?As device technology and access bandwidth speeds increase, so will mobile engagement.
?Smart marketers should see mobile as a powerful opportunity to connect in new ways that can be attributed directly to incremental sales lift,? he said.
The executive believes that eBay has done a great job in capturing incremental sales and real hard dollar increases in their bottom line, due to mobile.
Not only has the company invested heavily in mobile, but it has also generated $6 billion in sales last year, without any significant drop off in their standard online ecommerce sales.
?Mobile offers eBay a here and now real-time way to reach their customers and their customers need to stay abreast of the sales they are bidding on,? Mr. Kerr said.
?Leading a sales and marketing strategy with mobile at top of mind is a very good thing,? he said. ?The most powerful opportunities in mobile engagement are ?real-world trigger points? and the ability to link standard, established consumer touch points such as point-of-sale signage, printed collateral, tweets, Facebook posts, SMS messages, and even email to mobile-designed, commerce-enabled landing pages where sales can be converted at the click the button.
?All of this can translate very easily into standard online engagement, but it does not as easily work the other way. Mobile should be first because mobile is everywhere, all the time and is growing extremely rapidly.?
Mobile strategies
Many marketers are certainly taking the concept of a mobile-first strategy very seriously. However, they are finding the execution of mobile-first strategies challenging.
?In many respects, the term ?mobile-first? emerged due to the uniqueness of the mobile environment,? said Craig Palli, vice president of business development at Fiksu, Boston.
?Real estate for creative and user interface is far more limited and existing marketing infrastructures are largely incompatible, and as a result, desktop marketing proficiency can actually hinder mobile growth,? he said.
To have a successful mobile-first strategy, marketers must first let go of everything they know about the desktop and develop a mobile-first perspective from the ground up.
This includes rebuilding desktop familiarities for creative-unit best practices and the infrastructures that enable mobile marketing.
For many companies, this is very difficult. However, when done right, it will also prove to be effective.
According to Mr. Palli, there are many companies marketers can look up to when developing their own mobile-first strategies.
Take Hotel Tonight for example ? it is a mobile-first company in the purist sense.
The entire company was built from the ground up to revolutionize how consumers book hotel rooms.
There is also Zillow, which initially started on the Web.
Zillow got an early jump on mobile and has currently, mobile users are three times more likely to contact a realtor than desktop users.
Additionally, Coca-Cola is a great example.
The company has established a Mobile Center of Excellence to ensure their mobile engagement is best in class. The company has rolled out dozens of apps that engage consumers through music, games, and current events.
?Having a mobile-first strategy is not only a good strategy, it?s the only strategy,? Mr. Palli said. ?All the data suggests that digital engagements are quickly transitioning from the desktop to mobile devices.
?Many have called it the post-PC era, and as consumers increasingly favor phones and tablets to desktops and laptops, marketers must transition to mobile now or risk extinction,? he said. ?Fortunately, most marketers are committing to mobile and the strategic choice in front of those marketers is to adopt either a mobile-first strategy or a mobile-too strategy.
?What's become clear is that those marketers choosing mobile-first thrive, while those choosing mobile-too are getting left behind.?
Mobile shift
There has been a clear shift in mobile marketing.
Marketers and executives can see that the data around mobile adoption shows undeniably that customers are already mobile and only becoming more so as that adoption grows.
?We're still in a period of catch-up, though,? said Patrick Stack, manager of digital strategy at Acquity Group. ?Many organizations are still trying to break down the silos that make a truly digital-first strategy possible, much less mobile-first, and so there's an opportunity there for marketers who can leapfrog that process by breaking through silos and recognizing that an effective digital-first strategy today is mobile-first strategy.
?A good example of a brand that embraces Mobility is Amazon.com,? he said. ?They've been able to take the core elements of the Amazon shopping experience beyond the standard ?big-browse? format and translated it across their mobile sites, mobile apps, tablet apps and even onto hardware itself with the Kindle and Kindle Fire.
?Customers don't see their interactions with Amazon and their Amazon account as limited by channel format, but as a consistent brand experience that nonetheless transcends any single interaction point. It's important for marketers to study digital innovators like Amazon, Apple or Google, because these are the brands that are creating customer expectations for brand interaction across all industries.?
Companies need to maintain a system where core transactions on the back-end are easily translatable across customer-facing formats, whether that be mobile, big-browser, tablet or a customer-service agent, according to Mr. Stack.
?A mobility-first strategy helps companies thrive in this reality,? Mr. Stack said.
Final Take
Rimma Kats is associate editor on Mobile Marketer, New York


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Gary Jameson on how Wicklow can improve
THIS week we talk to Gary Jameson of St Patrick's GAA about the oft talked about strength and conditioning of Gaelic football players.
Who are you and what coaching are you currently involved in?
Gary Jameson, currently studying a degree in Athletic Strength and Conditioning, strength and conditioning coach with St. Patrick's and also with the U-14,15 and 16 development squads.
A lot has been said about the strength and conditioning in Wicklow or lack of recently, what is the current system like?
In my area, the development squads, it is only recently that we have tried to introduce this but it is only in the very early stages and in my opinion needs to really be pushed to see any benefits.
At present I'm only seeing the squads approximately four or five times a year where teams are tested and given generic programmes to go away and train unsupervised and then re-tested and results given to the coaches.
Do you think this is enough?
No I'm 100% sure it's not, but it is the start and everything has to begin somewhere.
It is important that we develop it or we will only fall further and further behind.
If you talk to any of the current development squad coaches they will tell you about the huge difference in other counties conditioning with the likes of Kildare, Dublin Tipperary etc. producing bigger stronger and faster players.
When these teams compete at U-14 the skill and strength and conditioning levels are fairly even but because of the difference in training and structure the players grow and improve at vastly differently rates.
It's obvious then as they reach Minor and U-21 that the gap in physical fitness is greater in the counties that have pushed strength and conditioning.
Unfortunately then that means the 'Training Age' (level of development with a structured and supervised programme) of our U-21s and Senior players is very low which makes it very difficult to advance resistance training and trust players to train unsupervised without concerns about technique or risk of injuries.
Is it not more important to focus on the development of football and hurling skills first?
Well its a chicken or egg situation really. Players need to be introduced to strength and conditioning as soon as possible which will only help their development as players.
We cannot expect to improve fundamental sport skills unless we make sure the players are functionally competent when it comes to demonstrating the simple movements needed to compete.
How can a player be expected to jump, side step, cut, bend, brace etc. at full speed with a ball when they might not be able to complete these movements away from the playing field.
Most teams now train two or three times a week. Is it not to much to ask on players and parents to add this to their busy schedules?
No, that's the type of thinking we need to get away from in order to move forward.
I think the benefits are to big to ignore this, if you look at the development squads and take their training twice a week and if we could introduce strength and conditioning as part of the warm up for 10 minutes you could see players complete 200-300 repetitions of a huge range of exercises per week, that means over the course of a 10 month season players will have completed anything from 8,000-12,000 reps over the year.
So over the three years in the development squads this would lead to improved performance, functional competency and also reduce the risk of injuries.
There is a lot of work needed in the years ahead if we are to begin to compete then?
Yes no doubt there is but in fairness to county chairman Martin Coleman he is determined to make change and with the recent meeting in Aughrim it really seems to be gathering momentum and I hope this continues.
As far as strength and conditioning in the county goes it needs work but I think the realisation that this is an area that must be improved and I think it will be, it must be.
There is great excitement about the new Centre of Excellence and with it comes a chance to introduce fully supervised strength and conditioning training for all squads in both codes.
Personally I think we need maybe two part time coaches one with the development squads and then another with the U-21s and Senior teams as the availability of squads to train limits the hours a coach can deliver these programmes.
It takes a lot of planning and all players need an individual programmes to cater for their needs and unfortunately because of the poor foundation in this area its a big job that will take time but not an impossible one. Like Gerry Grehan and company said in Aughruim at the meeting, "If we always do what we always did, we will always get what we always got".
Wicklow People


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The Minnesota Supreme Court has dismissed a lawsuit from Republican state senators who argued that a district court lacked authority to order continued state spending during last summer's government shutdown.
Six of the seven high court justices agreed in a ruling issued Wednesday that the question is moot since the July shutdown only lasted 20 days. But Justice Alan Page dissented, and says the court should settle the question once and for all since future state shutdowns are possible.
Republican Sen. Warren Limmer and colleagues had sued to block the court-ordered spending on items a judge ruled essential to preserving the health and safety of citizens. The senators argued that only the executive and legislative branches of state government have the authority to order spending of state dollars.
(Copyright 2011 by The Associated Press. All Rights Reserved.)


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Ohio Suspect, 32, Taken Into Custody - Robert M Hardin of Toledo
Robert M Hardin, a suspect of 32 years age, was charged according to information received from Toledo, OH officials on Thursday, April 26th, 2012.
Official Ohio public records obtained by MobileMugs indicate that the suspect, Hardin, was taken into custody on Thursday, May 8th, 2008. Hardin has allegedly been charged with one offense. Interestingly, when MobileMugs conducted a cross reference check for Robert Hardin, we located 4 possible previous arrests for Hardin.
Hardin was described as a suspect of 32 years age. MobileMugs will update this story as more information becomes available.
Every effort has been made to ensure the integrity of these data, however, MobileMugs makes no claims of guarantee surrounding the accuracy of such alleged facts, as Robert Hardin is to be considered innocent until proven guilty in a court of law. Last updated on .
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"A poet is a nightingale, who sits in darkness and sings to cheer its own solitude with sweet sounds"
Related quotes
"Beautiful thing is: when i am afraid of the dark, and it surrounds me, the smallest of lights can make me feel safe..."
"I am not finding myself, more introducing my many selves to one another in hope they may find an alliance. And that may sound slightly mad, but we are all mad and anyone who disagrees is probably in denial. Either that, or they are simply the sort I should avoid spending time with, for fear they may imprison me in their one dimensional delusional definitions of normality. How frightening."
"Pain is the greatest enemy of all sentient beings. It can drive anybody into a dark and cold place where nobody recognizes their existence. People will have you believe that being driven into that dark place is easily avoidable, but that is naive. No matter how strong you believe yourself to be, you are but one person and there is only so much that one person can take. To one who has absolutely nobody that cares, that dark place is the only thing they know."
"In all the darkness, it is still possible to find hope. In all the confusion, peace still abounds. In the most crowded place, you can find solitude. Even in the midst of peril, there is always a way out. It all comes down to you. So choose wisely!"


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The New York Yankees once were desperate to find starters to plug into an injury-depleted rotation. Now they have the opposite problem.
Righthander Bartolo Colon (hamstring) will come off the disabled list to start Saturday, and righthander Phil Hughes (shoulder) is expected back at some point next week.
The New York Daily News speculates that CC Sabathia and A.J. Burnett are locks to remain in the rotation, and that Hughes and Colon will return to the starting five. That leaves Freddy Garcia (7-6, 3.28) and Ivan Nova (7-4, 4.26 ERA) as candidates to move to the bullpen or the minors.
Another option: a six-man rotation.
"It's something we're going to think about as well," manager Joe Girardi told the Daily News. "Do we feel a guy needs an extra day off? Do you skip a guy just to give him a little extra rest in one spot? There are just some different things that you could do to be creative with the rotation if you do a six-man. Do, all of a sudden, you need one guy in the bullpen because your bullpen was fried the day before? Those are all things you have to consider if you do that."


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Friday, January 4, 2013
My Book of Grace.
33 comments:
The Power of Grace.ReplyDelete
Thank you, Monica!
What a beautiful piece.ReplyDelete
In so many ways~
Monica, this is amazing...I need to make myself one titled, Let it Go!.......fabulous work, what an inspiration you are. It always astounds me how you reach into our hearts and place our dreams in front of us, thank you for always being the artist you are! I will be in the line up for this issue for sure!!ReplyDelete
Lovely, Monica, absolutely lovely and heartfelt.ReplyDelete
Hugs, Diane
congratulation, it is wonderful~ReplyDelete
Congratulations to you!ReplyDelete
Beautifully done!ReplyDelete
Wonderful creation Monica - congrats on the article. So beautiful. Thanks for sharing.ReplyDelete
Your head and heart must both be swimming with creative ideas, Monica!ReplyDelete
Congrats Monica! That IS a wonderful way to start off the new year!!! It's really lovely. I also love your new look. Very fresh!!!!!ReplyDelete
I did see your book in the newest addition of somerset Life, and I shared it with my friend in the Netherlands. We both really love it, and I just wanted to tell you it is really beautiful. I have seen and admired your work before, but always felt to shy to comment, but this is a New Year and a New me. Thank you for sharing this beautiful creation with all of us! Best to you, ShellyReplyDelete
Dear Monica,ReplyDelete
Congratulations ! Your book of Grace is wonderful and such a great idea.
Thank you for showing us and all the inspiration you share.
Best wishes for a happy year
Beautiful!! What an inspiring piece of art to have out in the home. I'm so happy for you and your feature in the wonderful magazine.ReplyDelete
What a beautiful book Monica! I'm always amazed at your features in Somerset Life. You inspire me. :)ReplyDelete
Oh, and thank you so much for your comment on my humble house covered in snow. I told my husband that a wonderful woman from across the pond admired our little cottage and it made him happy, too. Sometimes I take this house for granted when I complain about the small size - your words encouraged more feelings of gratitude.
Thank you for all your inspiration and kindness!
xo, Susan
Absolutely, utterly charming and lovely...I would expect no less. :o) Such a wonderful idea, Monica. Sure love your creative heart, and all that flows from it!!ReplyDelete
I shared my delightful giveaway bounty from across the sea a few minutes ago! Hope you'll pop over and take a peek!
New Year Joy to you!
This is so lovely.....especially loved the "Be Still...Enjoy Being Still".ReplyDelete
What I needed to hear right now.
I shared your lovely book on my FB page, with a link back to you.ReplyDelete
I just wanted others to see and enjoy it...
Thank you for sharing this here (and in Somerset Life). It inspired me: http://www.ruffedgedesign.com/2013/01/22/while-the-iron-is-hot/ReplyDelete
Absolutely enchanting! You are soooo talented! I love Somerset Life, but I don't have this issue. I must order it so I can see this loveliness closer up!ReplyDelete


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[JURIST] Rwandan President Paul Kagame [BBC profile] has pardoned former President Pasteur Bizimungu [BBC profile], freeing him Friday from a 15-year prison sentence [JURIST report] handed down in 2004 for inciting violence, embezzlement, organizing a militia, and associating with criminals. Bizimungu's release comes nearly a year after Bizimungu sent Kagame a letter in May 2006 asking for clemency [JURIST report], saying that he "never intended to commit any crime" and that his release would be "for the good of the nation."
Bizimungu had appealed his conviction [JURIST report] to the Rwandan Supreme Court, but the court rejected Bizimungu's arguments [JURIST report] that his arrest and conviction had been politically motivated and that he should not have been convicted on charges different from those on which he was arrested. Kagame, a Tutsi, served as vice-president while Bizimungu, a Hutu, was president. Their term in office was meant to unify the country following the 1994 genocide [BBC backgrounder; HRW backgrounder]. Reuters has more.


text:
Re: [dxatlas] CW Skimmer 1.3
Expand Messages
- Dear Alex
I lost the registration code for Skimmer. Can I have it again?
Dan Schaaf
K3ZXL www.k3zxl.com
Cape Cod Instruments www.gnm-inc.com
NOBSKA www.nobska.net
Sent from my Ham Radio computer since I do not have a Blackberry
----- Original Message -----
From: Alex Shovkoplyas, VE3NEA
To: email@example.com
Sent: Sunday, November 02, 2008 11:34 AM
Subject: [dxatlas] CW Skimmer 1.3
CW Skimmer 1.3 has been released. New in this version:
- BLIND mode;
- jump to the next/previous station command;
- frequency calibration for SDR-IQ and QS1R;
- multiple LO frequencies in the SoftRock mode;
- SNR and WPM information in the Telnet spots.
The upgrade is free for all registered users.
73 Alex VE3NEA
[Non-text portions of this message have been removed]
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text:
Regis Philbin says giving up 'Live' wouldn't be easy
Published 10:00 pm, Wednesday, September 12, 2007
On a day when Regis Philbin is waxing nostalgic, he's also pondering where the future will take him.
"I do love being off," said the morning-talk-show host, who recently turned 76. "The years are going by, and I have reached a point in my life when, frankly, most guys my age have been retired for a few years."
During an interview in which the self-proclaimed "king" of daytime talks about the two decades he's been doing "Live" -- which was first co-hosted by Kathy Lee Gifford and then Kelly Ripa -- he's mulling when his tenure on the show will end.
"It's at least something to consider," he said.
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Philbin expects to come to a decision within the next year, but he isn't sure retirement would be the best thing right now. "I know I wouldn't like (not doing the show)," he said, adding with his famous deadpan, "and I know my wife would not like it."
Viewers of "Live" (which airs locally at 9 a.m. weekdays on KOMO/4) know well of almost every aspect of Philbin's life. His wife, Joy, has been a regular substitute co-host for years. She often talks about how Philbin can be underfoot when he has too much time on his hands.
He says his health will be a major consideration on when he retires. Earlier this year, Philbin had triple bypass surgery and was off the show for weeks. He says he's had a clean bill of health and is feeling fine.
"I like the way I feel. That's one hurdle down," he said.
Regardless of the future, Philbin is enjoying a moment to reflect on his past. Since 1961, when he was doing a talk show solo, Philbin has been a mainstay on television. He holds the Guinness record for most hours logged in front of a television camera. In 2004, when he was given the honor, his total was more than 15,000 hours.
Friday's edition of "Live" will reflect on many of those hours. On it, Philbin and co-host Ripa will look back at some of the show's memorable moments.
Gifford, who was Philbin's original "Live" co-host, will mark her first time back on the show, this time as a guest. Philbin says he's not sure why Gifford has never been back before now, though they have stayed in contact often since she left.
When she was co-host, Gifford, an outspoken conservative, was just as well known for her headlines off-camera. Her husband, former football great Frank Gifford, was the subject of infidelity in tabloid headlines. She was also under scrutiny when the clothing line bearing her name was said to be a product of barbaric child-labor practices in Third World countries.
When Gifford left in 2000, she was planning to broaden her career horizons. She had recorded albums and done guest spots elsewhere on television.
After she left, the program changed its name from "Live With Regis and Kathie Lee" to "Live With Regis." In that year, Philbin won his first Daytime Emmy. Months of searching for a new co-host finally resulted in the hiring of Ripa, who was best known then as a star of ABC's "All My Children."
Philbin says Gifford and Ripa "are very similar" women: driven, passionate and caring.
Time, Philbin says, has not dampened the dynamic between Gifford and him. They were combative friends on "Live," and Philbin says time has not changed much about that."It's pretty much the same," Philbin said. "But it might be interesting to see it again, you know?"
Even as he mulls retirement, Philbin appreciates what he has with "Live." Giving it up, he says, would not be easy.
"It's a beautiful job," he said. "I walk across the street, visit with (Ripa) for an hour, do some mail and some phone calls, and I'm done. Not a bad gig."


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[Yeni] SUDO Portal - Tanıtım ve Duyuru
0 Üye ve 1 Ziyaretçi konuyu incelemekte.
Thank you for choosing AVerMedia. Unfortunately, the A706 doesn't support Linux. As the device was originally designed to work under Windows only, we don't have any plans on providing any Linux drivers for the device. However, we will forward your suggestion to our engineer and product manager in hope that they will consider Linux support in the future.


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Product Description
Sally Hansen Magnetic Nail Color 906 Ionic Indigo (Cosmetics) Shake magnetic nail color to activate. Remove overcap with magnet and set aside. Apply 1 coat of magnetic nail color to all 10 nails and let dry. Apply a thick second coat of color to 1 nail and immediately hold the built-in magnet over the nail. Rest the guide just below the cuticle without touching the wet nail polish. Hold for 10 seconds. Repeat for all 10 nails and let dry. Finish with top coat.
Additional Information
Additional Information
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|Cosmetic Category