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Crossing Braker Ln north south by the Domain and Pickle Research Campus (PRC) is very hard to do on foot. I waited through three cycles of the lights to get a walk signal today at 10:30 am. Better crosswalks and fair signalization are solutions. It would also be nice if the City helped UT to build sidewalks in and out of PRC.
Dave Sullivan over 5 years ago
Mitchell Rappaport over 5 years ago
Why not ... hold a city - wide contest, for everyone, to come up with a successful idea to safely and economically cross the street there? The best idea could be recognized at an upcoming City Council Meeting, and the person with the idea could either be recognized for same by City Council or perhaps appear with the Mayor and/or City Council?
Gabriel Rojas over 5 years ago
I think something certainly needs to be done about this crossing. This is the major divide between all the neigborhoods east of Burnet and the Domain area. A pedestrian bridge may work, or even a park-like wide pedestrian bridge that would be landscaped and invite people not only to cross but to stay. .

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The Ashland Chain Hung Pendant
- Specification Sheet
- Send to Friend
The Ashland Chain Hung Pendant (ashland-collection-spec-sheet001.pdf, 151 Kb) [Download]
Finish Chart / Features
Product Details
For a classic barn light look with a vintage-inspired chain mounting, the Ashland Chain Hung Pendant adds a touch of modern styling to any space. With its RLM-inspired warehouse shade, the Ashland takes barn style to new heights with its swag mounting that includes Quicklinks for easy customizing.
American made of quality, commercial grade materials, this modern chain pendant light can be customized with shade size, finish, and cording options to create a distinctive fixture for your home or office space.
Shade Sizes:
|12" Shade: W 12" x H 6 ¾"
|14" Shade: W 14" x H 7 ¾"
|16" Shade: W 16" x H 8 ½"
Additional Information:
- Finish: Multiple (See Finish Options)
- Mounting: Standard 36" of Chain Included with Quicklink for on-site customization of length. Includes 8' of Standard Cord or 6' of Cotton Cord.
- Ceiling Canopy Dimensions: 5" Diameter
- Max Wattage Per Socket:
- 200W Standard Incandescent | 100W with Cast Guard Addition
- 23W GU24 Bi-Pin CFL (equivalent to 100W Standard Inc.) | 18W with Cast Guard Addition (equivalent to 75W Standard Inc.)
- Please Note: Fixtures configured with GU24 socket are non-returnable.
- Bulb Not Included
- Number of Sockets: 1
- Use: Multiple (See Cord Options)
- Manufactured in the U.S.A. This light fixture is made-to-order to suit your custom specifications. Learn more about the process here.
Please Note: No metal fixture, no matter the finish, is guaranteed against corrosion especially in salt air environments. If your fixtures will be installed in a location near salt water or with extreme weather conditions, we recommend routine and careful maintenance of your lighting including a mild soap-and-water wash and gentle buffing to help maintain the finish.
Customer Reviews
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|Publication number
|Publication type
|Application number
|Publication date
|Aug 29, 1995
|Filing date
|Dec 14, 1993
|Priority date
|Dec 14, 1993
|Fee status
|Also published as
|Publication number
|David F. Beigel, Edward L. Wolfe, William A. Krieger
|Original Assignee
|Analog Devices, Incorporated
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (3), Referenced by (45), Classifications (10), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
1. Field of the Invention
This invention relates to the means of reducing ESD damage to integrated circuits (ICs) comprising a substrate carrying a large number of circuit elements such as transistors and the like.
2. Prior Art
It is well known that ICs are subject to serious damage or destruction as a result of Electrostatic Discharge (ESD) events. The electrostatic charge can be developed by any of many sources, such as lightning, friction between insulating bodies such as synthetic fiber clothing, and contact with chip handling apparatus. Damage occurs when the ESD charge is accidentally coupled to one of the circuit terminal points to cause a large pulse of current to flow through some portion of the metal interconnect of the chip to a sensitive circuit element of the IC. Frequently, such current pulses will destroy the circuit element and with it the entire IC chip.
Bipolar junctions, dielectrics and thin film circuit elements (i.e., thin film resistors, diffused resistors, dielectric isolations, oxide capacitors) are especially subject to damage from ESD transients of relatively high energy. Such ESD transients can be simulated by the so-called Human Body Model (HBM), Machine Model (MM) and Charged Device Model (CDM).
Various devices have been employed to prevent damage to ICs from ESD events. For example, individual circuit elements often are protected by additional devices which shunt the ESD energy and thereby protect the element in question. In general, a separate shunt device must be provided for each element requiring protection (although in some cases the protection device may be shared by more than one element requiring protection). In any event, providing protection devices to prevent damage from ESD events requires additional IC area and typically produces some harmful side effects such as additional parasitic capacitance which slows down the response time of the circuitry. It is very desirable to reduce the impact of these detrimental consequences resulting from the use of ESD protective devices. Additionally, to fabricate the ESD device, it is desirable to use standard fabrication sequences which are monitored and controlled by statistical means.
In a preferred embodiment of the invention, to be described hereinbelow in detail, there is provided a high-performance ESD clamp device formed as part of the IC chip and connected to terminal points (such as bond pads) of the chip to shunt destructive ESD energy away from sensitive die circuitry. This embodiment comprises a diode-connected vertical bipolar transistor having a collector-emitter-base layout configuration, with circular and annular topographies. The two terminal, diode connected bipolar transistor ESD device is formed by externally connecting the base and emitter together with die metallization. A symbolic representation can be found in FIG. 1.
This two terminal clamp device is arranged to be connected between supply rails, ground, or any other circuit nodes. That is, the clamp device is connected as a shunt element and formed to withstand large power transients such as encountered during an ESD event between the external terminal point (bond pad and package pin) and sensitive circuitry to be protected. When an electrostatic pulse of large energy strikes the chip pin, the clamp device conducts to shunt the ESD energy away from sensitive circuitry. Thus the ESD energy is dissipated so as to avoid damaging any sensitive circuit elements connected to the external terminal point.
One feature of this ESD clamp device is its improved capability to conduct current vertically from emitter to collector identical to a bipolar transistor in the active mode. This result is accomplished by the position of the emitter which encloses the base contact. Further features comprise circular and annular topographies which eliminate high electric field concentrations and distribute current more evenly throughout the device.
By incorporating these features (as compared for example to traditional rectangular topographies and positioning of collector-base-emitter), the active emitter area is increased significantly with only a small increase in transistor area. This gives an important reduction in power density during an ESD event, thus reducing local joule heating and increasing the overall ESD tolerance. Because there is only a small increase in area, the parasitic capacitance is virtually unchanged as ,compared to non-annular, non-circular clamping devices.
Other objects, aspects and advantages of the invention will in part be pointed out in and in part apparent from the following detailed description of a preferred embodiment of the invention, considered together with the accompanying drawings.
FIG. 1 shows symbolic representations of bipolar transistor ESD devices configured as two terminal devices.
FIG. 2 is a plan view of an IC cell comprising an ESD clamp device in accordance with the present invention;
FIG. 3 is a cross-section view of the cell taken along line 3--3 of FIG. 2;
FIG. 4 is a horizontal section of the cell taken along line 4--4 of FIG. 3;
FIG. 5 is a circuit diagram showing the preferred embodiment a clamp device connected in shunt fashion between a bond pad and the IC circuitry to be protected from ESD pulses; and
FIG. 6 is a cut-away diagram showing, partly in perspective, current paths during reverse-bias operation.
Turning first to FIGS. 2 and 3, the ESD clamp is a circular cell generally identified at 10 which is a vertical NPN transistor. Surrounding this cellare other cells of the IC (not shown) formed with devices such as but not limited to transistors, capacitors and resistors. The interior of the cell10 comprises silicon isolated from the rest of the chip by dielectric material.
More specifically, the outermost region of the ESD cell 10 is a dielectrically filled deep trench 12 which functions as electrical isolation for the cell. The trench 12 circumscribes the ESD cell and extends from the upper silicon surface 8 to the buried oxide layer 14. Thebottom of the cell is defined by the oxide insulation layer 14 (buried oxide) which is between the lower surface of N-type silicon (to be described) and the upper surface of a P-type silicon substrate (not completely shown), and which sometimes is referred to as the "handle" of the chip. The upper surface of the cell is formed of silicon dioxide 16 for the chip. The regions 18 outside of the trench typically are tied to asupply rail of the chip and are designated as non-active circuit areas.
The collector region of the ESD cell is comprised of four different diffusions of N-type dopant. They are: a buried layer 20, a deep plug 24, an N-well 22, and a shallow N++ region 26. The buried layer 20 is a heavily doped region of relatively low resistance which comprises the bottommost electrically active layer of the transistor. The buried layer 20 extends throughout the ESD cell to the edge of the deep trench 12. An annular ring of deep plug 24 extends from the silicon surface 8 to the buried layer 20 with its outermost edge abutting the edge of the trench 12.
The inner edge of the deep plug annulus 24 is spaced sufficiently far from the base region 32 of the transistor to assure an adequate breakdown potential of the collector to base junction. Electrical contact to the collector is made through the surface dielectric 16 to an annular-shaped (but not completely closed) highly doped n++ layer 26 concentric with and contained within the deep plug annulus 24.
The base 32 of the transistor is circular shaped and concentric with the collector plug annulus. The base 32 is made of P-type dopant (opposite that of the collector) and extends from the silicon surface 8 to a depth that is spaced sufficiently far from the buried layer 20 to assure an adequate breakdown potential between the collector to base regions, and between the collector to emitter regions.
Electrical contact to the base region 32 is made through the surface dielectric 16 to a circular shaped region of a highly doped P++ layer 36 which is concentric to the base 32. The P++ layer 36 assures good electrical contact to the base region 32 and is constrained on all sides by the base layer 32.
The emitter 34 is a heavily doped N-type layer of annular shape, concentricto the base 32, with its inner edge spaced sufficiently far away from the highly doped P++ layer 36 to assure adequate breakdown potential of the emitter to base junction. The outer edge of the emitter annulus 34 is located within the base region 32 and spaced sufficiently far from the edge of the base to assure adequate electrical breakdown between the emitter to collector junction. Electrical contact to the emitter 34 is made through the surface dielectric 16.
The region of silicon 22 surrounding the base 32 and located between the collector plug regions 24 and the buried layer 20 is lightly doped N-type (N-well). The N-well is formed by counter doping the P-type epitaxial layer.
The electrical contacts to the emitter 34 and collector 26 are made throughopenings in the surface dielectric 16 filled with polycrystalline silicon 42, 28 highly doped N-type. Electrical contact to the base region 36 is made through an opening in the surface dielectric 16 filled with polycrystalline silicon 40 of highly doped P-type. The polycrystalline silicon layers 42, 28, 40 provide good ohmic contact and low resistance between the chip metallization 30, 44 and the silicon surface of the transistor. Above and directly in contact with the polycrystalline siliconlayers 42, 28, 40 is chip metallization 30, 44 (e.g., aluminum-copper) providing for external connections.
It will be seen that with this geometrical configuration, with the emitter region 34 entirely enclosing the centrally located base contact 36, 40, vertical bipolar transistor current conduction occurs during an ESD event (current conduction from emitter to collector 24). This configuration provides the important benefit of increasing the effective current conducting area of the emitter relative to standard rectangular emitter striped transistors. Thus, the localized power density for the device is significantly lower than that of the standard rectangular/emitter striped transistors.
In the preferred embodiment as shown in FIG. 5, the common base-emitter regions 32, 34 of the clamp device 10 are connected to the lead 50 extending from sensitive integrated circuitry 52 to a bond pad 54 of the chip. Bond pad 54 is the interface between the IC chip and the external world. The collector 24 of the clamp device is connected to the most positive potential which in this embodiment is a power supply rail designated +Vs, and serving as a low impedance bus for the clamp device. When an electrostatic pulse strikes the bond pad, the energy travelling along the connection lead 50 is shunted by the clamp device to the supply rail so as to limit the voltage and current received by the circuitry 52 and preventing damage to that circuitry.
In the preferred embodiment, when a negative ESD spike reaches the clamp device as in FIG. 5, a positive polarity from the collector (+) to the emitter-base (-) occurs. The base-collector becomes reverse biased and eventually goes into avalanche breakdown, conducting the avalanche currentin path I1 as shown in FIG. 6. As theorized as the current I1 increases with respect to the increasing magnitude of the ESD spike, the lateral voltage drop in the base (Rb X I1) develops a localized forward bias potential of the emitter and base junction in the base regionpinched between the emitter and N-well layer diffusions. This localized forward bias junction induces current conduction between the emitter and collector such as a bipolar transistor conducting in the active mode. Oncethe voltage and current from the ESD spike has been shunted and dissipated,the clamp devices' current conduction from collector to emitter-base turns off and the clamp functions as a reverse biased diode.
ESD failures in the semiconductor material are thermally related and proportional to the localized power density in the device. Failures predominately occur in reverse-biased junctions where the power density isequal to the electric field across the junction multiplied by the current density in that semiconductor region. Traditional ESD clamps rely on current flows similar to I1 alone; hence large topographical areas are needed to reduce current density to increase the ESD threshold. In comparing the current density of each path (I1, I2), the area incurrent path I2 is approximately the topographic area of the emitter diffusion (Ae), whereas the area in current path I1 is approximated by the topographical circumference of the base diffusion (Cbase) multiplied by the base junction depth (Xjb). In most IC chips junction depth is typically much less than emitter drawn feature size. Therefore for the same size transistor:
Ae >>Xjb X Cbase and;
Current density (I2)<<Current density (I1) where I2 /Ae =Current density due to I2 and (Xjb X Cbase)=current density due to I1.
For the same ESD event, the circular and annular topographies of the disclosed device provide for a more uniform and reduced current density compared to more traditional rectangular striped configurations.
The ESD protection circuit of the disclosed device also protects against ESD induced spikes of positive polarity. Suppose that a positive voltage spike generated by an ESD impinges across wire-bonding pad 50 and power supply conductor 51 as in FIG. 5. In this case, the potential at the wire bonding pad 50 is more positive than the potential at power supply conductor 51. Transistor 10 responds swiftly with its base-collector junction forward biasing conducting current laterally from base 32 to collector 24 in a manner similar to current I1 shown in FIG. 6, but in an opposite direction. In this case, the voltage across the base-emitter junction is a normal diode drop which is about 0.6 Volt in the preferred embodiment. Power, which is equal to the product of voltage and current, is small in this case. The lateral current flow consequently does not result in excessive localized heating, hence large ESD thresholdsare obtained.
Under normal IC chip operation, the ESD clamp functions as a reverse-biaseddiode. The low parasitic capacitance, low leakage current, and compact geometric area of the ESD clamp are important advantageous features of ESDclamps for high speed applications.
Although a preferred embodiment of the invention has been disclosed herein in detail, it is to be understood that this is for the purpose of illustrating the invention, and should not be construed as necessarily limiting the scope of the invention since it is apparent that many changescan be made by those skilled in the art while still practicing the invention claimed herein.
|Cited Patent
|Filing date
|Publication date
|Aug 31, 1970
|Jun 26, 1973
|Fairchild Camera Instr Co
|Method of forming semiconductor device contacts
|May 24, 1976
|Jul 11, 1978
|Rca Corp.
|Protective circuit for MOS devices
|Jun 30, 1980
|Oct 20, 1981
|Rca Corporation
|Method of manufacturing bulk CMOS integrated circuits
|Citing Patent
|Filing date
|Publication date
|Oct 20, 1995
|Jan 14, 1997
|Analog Devices, Incorporated
|Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
|Jun 7, 1995
|Mar 4, 1997
|Texas Instruments Incorporated
|Method of forming a controlled low collector breakdown voltage transistor for ESD protection circuits
|Nov 22, 1994
|Aug 12, 1997
|Lucent Technologies Inc.
|Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control
|Feb 10, 1999
|Apr 4, 2000
|Vanguard International Semiconductor Corporation
|Fabrication of ESD protection device using a gate as a silicide blocking mask for a drain region
|Feb 12, 1999
|Jan 2, 2001
|Vanguard International Semiconductor Corporation
|CMOS device with deep current path for ESD protection
|Nov 13, 2000
|Aug 14, 2001
|Vanguard International Semiconductor Corporation
|CMOS device with deep current path for ESD protection
|Jul 26, 2000
|Jun 4, 2002
|Agere Systems Guardian Corp.
|Input stage ESD protection for an integrated circuit
|Jan 14, 2000
|Sep 3, 2002
|Broadcom Corporation
|System and method for ESD Protection
|Jul 26, 2000
|Mar 4, 2003
|Agere Systems Inc.
|Output stage ESD protection for an integrated circuit
|Jul 19, 2002
|Nov 8, 2005
|Broadcom Corporation
|System and method for ESD protection
|Jul 1, 2005
|Oct 3, 2006
|Broadcom Corporation
|System and method for ESD protection
|Sep 15, 2006
|Aug 26, 2008
|Broadcom Corporation
|System and method for ESD protection
|Aug 8, 2005
|Oct 21, 2008
|Broadcom Corporation
|ESD protection for high voltage applications
|Jul 6, 2005
|Mar 17, 2009
|Agnes Neves Woo
|ESD configuration for low parasitic capacitance I/O
|Jan 3, 2008
|Mar 30, 2010
|Broadcom Corporation
|System and method for ESD protection
|Jul 26, 2007
|Apr 6, 2010
|Broadcom Corporation
|System and method for ESD protection
|Mar 15, 2005
|May 18, 2010
|Broadcomm Corporation
|Integrated spiral inductor
|Feb 26, 2009
|Apr 5, 2011
|Broadcom Corporation
|ESD configuration for low parasitic capacitance I/O
|May 12, 2009
|Aug 16, 2011
|Semiconductor Components Industries, Llc
|Electrostatic discharge circuit using forward biased circular-arc shaped steering diodes
|Mar 22, 2010
|Oct 11, 2011
|Broadcom Corporation
|System and method for ESD protection
|Oct 10, 2008
|Nov 1, 2011
|Broadcom Corporation
|ESD protection for high voltage applications
|Mar 25, 2010
|Jul 24, 2012
|Broadcom Corporation
|Multi-track integrated circuit inductor
|Oct 7, 2011
|Mar 26, 2013
|Broadcom Corporation
|System and method for ESD protection
|Mar 12, 2013
|Sep 30, 2014
|Stmicroelectronics S.A.
|Electronic device for protection against electrostatic discharges, with a concentric structure
|Apr 1, 2014
|Dec 22, 2015
|Mitsubishi Electric Corporation
|Semiconductor device having breakdown voltage enhancement structure
|Mar 15, 2005
|Jul 21, 2005
|Broadcom Corporation
|Integrated spiral inductor
|Jul 1, 2005
|Oct 27, 2005
|Broadcom Corporation
|System and method for ESD protection
|Aug 8, 2005
|Jun 15, 2006
|Broadcom Corporation
|ESD protection for high voltage applications
|Jul 6, 2005
|Jul 13, 2006
|Broadcom Corporation
|ESD configuration for low parasitic capacitance I/O
|Sep 15, 2006
|Jan 11, 2007
|Broadcom Corporation
|System and method for ESD protection
|Nov 2, 2006
|Jun 28, 2007
|Sharp Kabushiki Kaisha
|Regulator circuit and semiconductor device therewith
|Jan 3, 2008
|Jul 24, 2008
|Broadcom Corporation
|System and method for ESD protection
|Oct 10, 2008
|Feb 19, 2009
|Broadcom Corporation
|ESD protection for high voltage applications
|Feb 26, 2009
|Jun 25, 2009
|Broadcom Corporation
|ESD Configuration for Low Parasitic Capacitance I/O
|Mar 22, 2010
|Jul 8, 2010
|Broadcom Corporation
|System and Method for ESD Protection
|Mar 25, 2010
|Sep 30, 2010
|Broadcom Corporation
|Integrated Spiral Inductor
|Mar 12, 2013
|Apr 10, 2014
|Stmicroelectronics S.A.
|Electronic Device for Protection against Electrostatic Discharges, with a Concentric Structure
|Apr 1, 2014
|Dec 18, 2014
|Mitsubishi Electric Corporation
|Semiconductor device and method of manufacturing semiconductor device
|Sep 20, 2004
|Feb 4, 2009
|Semiconductor structure and application, especially for restricting over-voltage
|Sep 22, 2008
|Aug 11, 2010
|Semiconductor device and a method of manufacturing the same
|Nov 4, 1997
|Jun 3, 1998
|Xerox Corporation
|RF switching cells
|Nov 4, 1997
|May 6, 1999
|Xerox Corporation
|RF switching cells
|Oct 1, 2001
|Apr 17, 2002
|International Business Machines Corporation
|SiGe transistor, varactor and p-i-n element for BiCMOS circuits and ESD networks
|Oct 1, 2001
|Jul 21, 2004
|International Business Machines Corporation
|SiGe transistor, varactor and p-i-n element for BiCMOS circuits and ESD networks
|Sep 15, 2000
|Mar 22, 2001
|Infineon Technologies Ag
|Esd protective arrangement for a semiconductor device
|U.S. Classification
|257/355, 257/565, 257/362, 257/586, 257/506
|International Classification
|Cooperative Classification
|European Classification
|Dec 14, 1993
Owner name: ANALOG DEVICES, INCORPORATED, MASSACHUSETTS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BEIGEL, DAVID F.;WOLFE, EDWARD L.;KRIEGER, WILLIAM A.;REEL/FRAME:006814/0566
Effective date: 19931210
|Feb 22, 1999
|Fee payment
Year of fee payment: 4
|Feb 10, 2003
|Fee payment
Year of fee payment: 8
|Mar 19, 2003
|Maintenance fee reminder mailed
|Feb 13, 2007
|Fee payment
Year of fee payment: 12


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Gear: At the end of August until years-end you may have a wonderful time to update your transmog and you'll be buying new gear.
You & your group/guild: February is your best month to start interviews if you want to change group/guild or just want a higher position in your current group. Look for opportunities in the net and talk to people because you will want to know about them before they are posted somewhere else. At the beginning of March and September you will have the opportunity making new friends. You will be working on your personal life and it will likely bring change and fresh opportunities. You might hear your friend will be moving away or taking on a position. A greater title for you to achieve from November to Mid-December. Your work may receive positive feedback from your leader. If you need new equipment such as hardware or an upgrade you will be able to do so between October – December.
Gold: The second half of the year is marked by lots of work that does not always be joyfull and you maybe even feel you're not moving forward. Later in the year you will realize how much you have actually managed. If your fighting spirit has awakened, nothing can stop you – and your gold income will increase especially in April and December. If you need to borrow money don't ask for more. This year will teach you the value of money and may show you alternative ways to spend and save. Very special will be August and October where you may start to increase you gold income.
Leader: You will receive some of the most assignments you've seen in a long time in September until next year. You may need to do more recruiting but you won't and don't need to have any worries. It might be the case you want to leave the guild/group or someone else may take your place – scheduled for the last week of September.
Love: If your're attached and your partner does not jump on the same train or has different ideas it may become slow in May and October. For a big event consider summer. If you frequently get upset over your partner's quirks rethinking is helpful. If you set clear rules for tasks in partnership a family dispute can not arise in terms of money and home. In a strong and happy relationship you can now bond closer. You may think about a higher level. It would be wise to think long term as relationships will grow and develop as time goes by.
If you are single you have an excellent chance meeting a person who fascinates you and will stay in your life. You will be amazed to meet the kind of partner who you can actually imagine setting up a serious, long term relationship. It may be a dark & stormy night before you actually believe something like this can happen. September 30 will be a perfect day for you – sparkles in your love life. Early March and September will be your most important social time this year.
Personal: Your health will improve and gets stronger by the day, assuming you will continue to follow a healthy lifestyle. Take good care of your health this year aswell so you do not suffer from your high workload. Lots of exercise is part of the well-being as well as a varied leisure program. Make September your start month to end a habit and start something good for your health. All you need is to show what you really want – in your actions and words. Don't be extreme in your methods! Take it slow and steady. Your job – current or new – may bring you into an international area. Enthusiasm will rise to get out of town and you will find an affordable package that will take you across many miles. Interesting times are waiting for you in November for that's when a late year surge for your services will occur.
What do you say about this, Taurus? Are you looking forward to a good year? You're welcome to leave a comment.


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Adam Levine, judge on The Voice and apparently a musician of some sort, is in talks to join the cast of Ryan Murphy's American Horror Story. While the plot for the second season is mostly under wraps, Levine would be playing one half of a couple being referred to as "The Lovers." With a title like that, I expect — nay, I demand frequent male nudity. Somehow I think I can count on Murphy to provide. He'll join returning cast members Jessica Lange, Evan Peters, Zachary Quinto, Lily Rabe, and Sarah Paulson, all of whom will be playing completely different roles.
Now, before you start going on about how Levine has no acting experience — besides pretending to like Blake Shelton every week, that is — let me say that this makes perfect sense. Season two is generally when all Ryan Murphy series take a sharp nose dive into laughable plots, painful dialogue, and character arcs that are so baffling you start to doubt your sanity. (Quinn is a punk but secretly wants to take her baby back from Rachel's mom and so she becomes evil again but eventually gives up and now she's going to Yale but also wants to be a cheerleader except she just got hit by a truck? Okay.) Casting an untested front man of a mediocre rock group as a lead is totally something that fits into the expected devolution of this show.
The first season American Horror Story held up surprisingly well, considering the load of insanity bananas it struggled to support, but let's be honest: we're all waiting for the cracks to start showing. (And by that, I mean Adam Levine's crack. His music might suck, but he's an attractive man and I'm only human. Don't get prudish on me now, Murphy.)
We'll see if Levine can pull off this whole acting thing come fall — if he actually signs on, that is — but I think we can all agree that no matter how good or bad he is on the show, it will have been worthwhile if it keeps him from doing something like this again:


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In the age of CommonApp and acceptance rates that mirror the economy (but express no chance of upswing), applying to ten colleges isn't a form of insanity—it's a peace of mind. But almost inevitably, by the time April arrives there's going to be more than one school knocking at your door.
Yes, it's cliché, but it's bound to be asked: Why Middlebury?
Was it the financial aid package that came smiling, attached to your acceptance letter? The words and numbers of the be-all, end-all US News and World Report? How about the subjective grades of College Prowler? Maybe it was the communal "wisdom"
of the only website that a high school senior may visit more often than Facebook—College Confidential. Perhaps it was just the Middlebury name.
Apparently my fellow freshmen in Hadley Hall don't agree. An aspiring dental student says Bi-Hall was the clincher, a reason potent enough to apply ED for. Another freshman from the Golden Coast "wanted to wear scarves and leggings in the winter." More than a few potential Midd Kids forged their decisions after watching a YouTube video titled with the same, two rhyming words. For myself, it was this very website.
A Vancouverite hailing from a land of gargantuan public universities, MiddBlog introduced me not only to Middlebury, but also to the concept of a liberal arts college itself. No, this isn't a most glorious act of sucking up. These are candid words—about as candid as the image MiddBlog's own words painted of Middlebury for me ten months ago.
But I'm convinced that my story isn't unique. And with almost 600 new students on campus, my quest is an obvious one: find these stories and broadcast them. On a weekly basis I hope to carry out this task, every Sunday revealing a freshman's story and a distinctive answer to one question: Why Middlebury?
Because really, it is these narratives that ink the "A" letter grade at College Prowler, ensure the US News ranking of number 4, and stretch the Middlebury name around the globe.


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Herb Crab Quiche Recipe
- 1 sheet refrigerated pie pastry
- 4 large eggs
- 2 cups heavy whipping cream
- 2 tablespoons minced chives
- 2 tablespoons minced fresh cilantro
- 2 tablespoons minced fresh parsley or 2 teaspoons dried parsley flakes
- 1/2 teaspoon salt
- 1/2 teaspoon seafood seasoning
- 1/4 teaspoon pepper
- 1/8 teaspoon ground nutmeg
- 1 can (6-1/2 ounces) lump crabmeat, drained
- 1/2 cup shredded Swiss cheese
- 1/2 cup shredded Monterey Jack cheese
- Fresh chives, optional
- Unroll pastry into a 9-in. pie plate; flute edges. Line unpricked pastry with a double thickness of heavy-duty foil. Bake at 450° for 8 minutes. Remove foil; bake 5-7 minutes longer or until lightly browned. Cool on a wire rack.
- In a large bowl, whisk the eggs, cream, chives, cilantro, parsley, salt, seafood seasoning, pepper and nutmeg; stir in the crabmeat and cheeses. Pour into crust.
- Bake at 375° for 40-45 minutes or until a knife inserted in the center comes out clean. Let stand for 15 minutes before cutting. Garnish with fresh chives if desired. Yield: 6 servings.
Reviews forHerb Crab Quiche
My Review
Average Rating
"This was really tasty and full of crab flavor. I used Old Bay seasoning and jumbo lump crab meat - pasteurized which made it rather pricey but being from Maryland, that's how we roll. I will make this again. Next time, I will leave out the cilantro because I'm not a big fan, plus it seems to overpower the sweet crab. This is a keeper."
"This was terrific and garnered a lot if praise. I made a few alterations: used a blend of Swiss and Gruyere, added fresh tarragon and thyme with the other herbs in the recipe and used crab claw meat this is going in my favorites"


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Cambridge's admissions office is the latest to join the ever-growing list of MBA adcoms with its own blog — albeit officially unofficial. Written by James Barker, Admissions Co-ordinator at the Cambridge MBA Admissions Office, The Cambridge MBA Admissions Year's stated purposes is to "give readers an insider's perspective on the MBA Admissions year and to comment on events and activities surrounding the Cambridge MBA that may be of interest. "
But he has also accrued many admirers, some of whom view him as a model for business leaders hoping to make order-essay-online.net/ a difference in the nation's schools


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Although we're not quite sure exactly where they come from, we always seem to have a brick or two lying around our garage. Don't get us wrong, we're not complaining; we've effectively put them to good use as a doorstop.
But those red blocks are capable of doing so much more than that. We've rounded up ten essential ways to use them all around the house. From waterproofing firewood to making your own bookends, here's how to put those trusty bricks to good use.


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Mathematician says Kansas voting machines need to be audited
Beth Clarkson says government officials have been reluctant to provide her with the records she needs to conduct an audit.
Beth Clarkson says government officials have been reluctant to provide her with the records she needs to conduct an audit.
The California water board has proposed the first-of-its-kind, $1.5 million fine for water-taking during the drought.
Shawn Raines, a Marine (ret) decided to take the issue of safety for local military recruitment offices into his own hands Monday.
Earth dialed the heat up last month, smashing warm temperature records for both the month and the first half of the year.
The owner of a Maine diner says she's not sorry for yelling at a 2-year-old child for crying in her restaurant.
Seven finalists have been selected for the site of a proposed Kansas transload shipping center.
U.S. Agriculture Secretary Tom Vilsack said Monday that he's not ready to declare the Midwest bird flu outbreak over.
Jon Stewart enters the home stretch of his 16 years on Comedy Central's "The Daily Show" on Monday.
Here are some tips to keep students safe while boarding the bus.
A 4-year-old cancer patient was treated to a dream wedding with her Prince Charming, her favorite nurse.
An employee helped deliver a baby in the parking lot of the restaurant.
Sedgwick County has released their 2016 recommended budget. Download the full report here.
A new study from Tel Aviv University suggests another medical breakthrough for marijuana.
The parent company of Ashley Madison, a matchmaking website for cheating spouses, says it was hacked.
DaVinci is recalling their Reagan M2801, Emily M4791, Jamie M7301, Jenny Lind M7391 brand cribs .


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I received this book for free from Publisher via Netgalley in exchange for an honest review. This does not affect my opinion of the book or the content of my review.The Rain Sparrow (Honey Ridge, #2) by Linda Goodnight
Published by HQN Books on February 23rd 2016
Genres: Fiction, Romance
Pages: 384
Format: eARC
Source: Publisher via Netgalley
New York Times bestselling author Linda Goodnight welcomes you back home to Honey Ridge, Tennessee, with another beautiful story full of hope, haunting mystery, and the power to win your heart...
Famous yet anonymous, thriller writer Hayden Winters lives a life colored by lies. Deeply ashamed of his past, his hunger for an honest relationship and dreams of starting a family remain unsatisfied, and he can trust no one with his secrets. He's determined to outrun his personal demons, but the charming old Peach Orchard Inn and a woman whose presence is as gentle as a sparrow's song stops him in his tracks.
Carrie Riley is afraid of everything from flying to thunderstorms, and pretty much of life itself. But meeting the enigmatic writer staying at the inn emboldens her to learn everything about him. When they discover a fragile boy hiding at the inn, Hayden is honor-bound to help Carrie protect him. Soon they're led to a centuries-old mystery that haunts Hayden's sleep, and his only safe haven is Carrie. As the secrets of the past and present force their lives to become entwined, all that's left to come to light is love—if the grim truth doesn't tear them apart first.
Carrie is a librarian in Honey Ridge. She is scared of storms and pretty much everything else. Hayden is a writer who comes to stay at the local inn as a way to draw inspiration for his next novel. He is someone who is ashamed of his past and tries to avoid it at all costs. Still a different kind of past keeps haunting him in his dreams. When the two find a small boy hiding from a storm they take an interest in him and his well being. They both need to face their pasts, things they are scared of and open up to the possibility of something more than friendship.
I wasn't sure what to expect with this but I was pleasantly surprised at how much I enjoyed it. Here are the top 5 things I liked about The Rain Sparrow.
Hayden and Carrie. The two main characters in this were great. They were both so kind, loving and sweet. While they both had their issues and kept some stuff back from each other they were able to work through all the obstacles. They were a very easy couple to root for.
Historical Chapters. During his time at the inn, Hayden has dreams about the inn and it's owners right after the civil war. He doesn't understand why he is having these dreams and how he knows so much about these people and their story. These dream chapters tell the story of a Northerner man who comes to work at the inn and its mill and the Southern woman who lives there. I enjoyed them so much I wish there was a whole book around them and that time. I may have to search out some more civil war fiction!
Heavy Book References. Pretty much this will happen if your two main characters are a librarian and writer. I always love a heavy dose of book references in my stories and this was no different.
Southern Charm. This book made me want to go stay at a beautiful inn down in the south. It seemed picturesque, the small town was charming and the people seemed so interesting and, well, for lack of a better word, southern!
Happy Ending. I am always happy when books like this end happily. All story lines seemed to wrap up nicely and put a smile on my face.
I thought the pacing was done well and always kept me interested in what would happen next. My only thing is it was written in the third person and that isn't my favorite. Still it was done well and it didn't bother me too much. If you enjoy southern, small town stories with some historical fiction interlaced this would be for you. While this is the second book in the Honey Ridge series it reads as a stand alone.I am very excited to check out the first book in this series now!
New York Times and USA Today Bestseller, Linda Goodnight is the winner of the RITA and other highly acclaimed awards for her emotional fiction. Active in orphan ministry, this former nurse and teacher enjoys writing fiction that carries a message of hope and light in a sometimes dark world. A country girl, she lives in Oklahoma.
Connect with Linda
Website | Facebook | Twitter


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Olympus OM-D E-M10 Mark III Review
Mac users, Macphun's all-in-one photo editor Luminar is available for just $69£52 for new users, or $59£44 for existing Macphun users. We rated Luminar as "Highly Recommended". Visit the Luminar web site to try it for free.
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We rated Luminar for Mac as "Highly Recommended". Visit the Luminar web site to try the beta for free.
Leica Camera has released a firmware update for the Leica M10 digital rangefinder camera. This updateadds numerous improvements to the camera's handling. These include optimised colour-coding of the status bar for SD memory cards and battery level, which now change from green to yellow to red as the battery charge level reduces or the card becomes full. The 'Favourites Menu' has also been revised: up to 15 menu entries can now be created and a second Favourites page opens after adding more than seven entries. Furthermore, the main menu can now be opened by pressing the Menu button in the Favourites Menu. The same button can also be used for page-by-page scrolling. An additional new feature enables the selection of the target display for automatic review on the monitor screen. The menu entry now offers the alternatives 'Auto', 'EVF' or 'Display' as target options, while 'Edit Favourites' allows the activation of direct access to 'M-ISO' as a Favourites Menu item. The firmware update also brings a further significant reduction in the lag (dark screen) between exposure and display when taking pictures in Live View mode.
Website: Leica


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2500* Double Layer of Pocket Springs
Pocket springs move independently and so provide the best postural support. The individual pocket springs follow and support your body shape and weight. *King size.
Spring Tension
Available in one tension only.
Foam Encasing
The pocketed springs are encased with foam to provide added comfort and support. Top layer: 25mm foam Borders: 100mm Deep foam Base layer: 50mm foam
Hypo-Allergenic Layer
A layer of hypo-allergenic fibre is used underneath the mattress fabric cover. This layer is sterilised and dust free, therefore, ideal for allergy sufferers.
Resilient Foam
Provides a resilient and supportive surface feel.
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Quilted mattress border provides a better border and soft cushioning for the fillings inside the mattress.
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An advanced functional fibre that is quick-drying, water wicking and highly permeable to help regulate your body temperature for a dry and comfortable sleep.
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Rise of the Planet of the Apes
Scientist Will Rodman is determined to find a cure for Alzheimer's, the disease which has slowly consumed his father. Will feels certain he is close to a breakthrough and tests his latest serum on apes, noticing dramatic increases in intelligence and brain activity in the primate subjects – especially Caesar, his pet chimpanzee. Watch Rise of the Planet of the Apes For Free on 123Movies
Genres: Thriller Action Drama Science Fiction
Stars: Ramsey Campbell John Carpenter Robin Atkin Downes Neil Gaiman Stuart Gordon S.T. Joshi Caitlin R. Kiernan Andrew Migliore Robert M. Price Peter Straub Guillermo del Toro Silas Howard Harriet Dodge Stanya Kahn Carina Gia
Directing: Frank H. Woodward Harriet Dodge Silas Howard Manuel Valls Jaume Bayarri Frank Brittain Rupert Wyatt Henry Rivero
Country: US
Runtime: 105 min.
Quality: LQ, SD, HD
Release Date: 2011-08-03


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Does drinking water really help you lose weight?
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