text:
|Publication number
|Publication type
|Application number
|Publication date
|Sep 28, 2010
|Filing date
|Oct 22, 2007
|Priority date
|Oct 22, 2007
|Fee status
|Also published as
|Publication number
|Jingmei Liang
|Original Assignee
|Applied Materials, Inc
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (140), Non-Patent Citations (11), Referenced by (59), Classifications (35), Legal Events (2)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is related to a co-assigned U.S. Patent Application and titled "CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN." This application is also related to a co-assigned U.S. patent application Ser. No. 11/754,924 by Lubomirsky et al., filed May 29, 2007, and titled "PROCESS CHAMBER FOR DIELECTRIC GAPFILL." The application is further related to a co-assigned U.S. Patent Application and titled "HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS." The entire contents of the related applications are hereby incorporated by reference for all purposes.
The present invention relates in general to methods for forming semiconductor structures, and more particular to methods for forming a dielectric layer within trenches.
As the device density on integrated circuits continues to increase, the size and distance between device structures continue to decrease. The narrower widths in the gaps of the structures and the trenches between structures increases the ratio of height to width (i.e., the aspect ratio) in these formations. The continued miniaturization of integrated circuit elements is shrinking the horizontal width within and between these elements faster than their vertical height.
While the ability to make device structures with ever increasing aspect ratios has allowed more of the structures (e.g., transistors, capacitors, diodes, etc.) to be packed onto the same surface area of a semiconductor chip substrate, it has also created fabrication problems. One of these problems is the difficulty of completely filling the gaps and trenches in these structures without creating a void or seam during the filling process. Filling gaps and trenches with dielectric materials like silicon oxide is necessary to electrically isolate nearby device structures from each other. If the gaps were left empty, there would be too much electrical noise, and current leakage for the devices to operate properly (or at all).
When gap widths are larger (and aspect ratios smaller), the gaps are relatively easy to fill with a rapid deposit of a dielectric material. The deposition material would blanket the sides and bottom of the gap and continue to fill from the bottom up until the crevice or trench was fully filled. As aspect ratios increased however, it became more difficult to fill the deep, narrow trench without having a blockage start a void or seam in the fill volume.
Voids and seams in a dielectric layer create problems both during semiconductor device fabrication and in the finished devices. The voids and seams are formed randomly in the dielectric layer and have unpredictable sizes, shapes, locations and population densities. This results in unpredictable and inconsistent post-deposition processing of the layer, such as even etching, polishing, annealing, etc. The voids and seams in the finished devices also create variations in the dielectric qualities of gaps and trenches in device structures. This can result in uneven and inferior device performance due to electrical crosstalk, charge leakage, and even shorting within and between device elements.
Techniques have been developed to minimize the formation of voids and seams during deposition of dielectric materials on high aspect ratio structures. These include slowing the deposition rate of the dielectric material so it stays more conformal to the sidewalls and bottom of the trench. A more conformal deposition can reduce the degree to which the deposited material builds up at the top or middle of the trench and eventually seals off the top of a void. However, slowing the deposition rate means increasing the deposition time, which reduces processing efficiency and production rates.
Another technique to control void formation is to increase the flowability of the deposited dielectric material. A material with more flowability can fill the trenches quickly from bottom up, and this desirably prevents void or seam formation that would become a permanent defect in the fill volume. Increasing the flowability of a silicon oxide dielectric material often involves adding water vapor or peroxide (e.g., H2O2) to the mix of precursors used to form the oxide layer. The water vapor creates more Si—OH bonds in the deposited film which impart an increased flowability to the film. However, increasing the moisture level during a silicon oxide deposition can also adversely effect the properties of the deposited film, including its density (i.e., an increased wet etch rate ratio (WERR)) and dielectric properties (i.e., an increased k-value).
According to an exemplary embodiment, a method for forming a semiconductor structure includes reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150° C. or less to form a silicon oxide layer over a substrate. The silicon oxide layer is ultra-violet (UV) cured within an oxygen-containing environment.
According to another exemplary embodiment, the method further includes forming at least one trench structure within the substrate, wherein the at least one trench structure has a height to width aspect ratio of about 5:1 or more.
According to the other exemplary embodiment, the method further includes providing the substrate to a deposition chamber; generating the atomic oxygen precursor outside the deposition chamber; introducing the atomic oxygen precursor into the chamber; and introducing the silicon precursor to the deposition chamber, wherein the silicon precursor and the atomic oxygen precursor are mixed in the deposition chamber.
According to alternative exemplary embodiment, the generating the atomic oxygen precursor includes: forming a plasma from a gas mixture comprising argon; and introducing an oxygen precursor to the plasma, wherein the oxygen precursor dissociates to form the atomic oxygen. The oxygen precursor may be selected from the group consisting of molecular oxygen, ozone, and nitrogen dioxide.
According to an exemplary embodiment, the silicon precursor is selected from the group consisting of silane, dimethylsilane, trimethylsilane, tetramethylsilane, diethylsilane, tetramethylorthosilicate (TMOS), tetraethylorthosilicate (TEOS), octamethyltrisiloxane (OMTS), octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TOMCATS), DMDMOS, DEMS, methyl triethoxysilane (MTES), phenyldimethylsilane, and phenylsilane.
According to another exemplary embodiment, UV curing the silicon oxide layer has a processing temperature between about 20° C. and about 650° C.
According to the other exemplary embodiment, oxygen-containing environment comprises a mixture of ozone and oxygen.
According to alternative exemplary embodiment, the ozone has a percentage of about 18 wt % or less.
According to an exemplary embodiment, UV curing the silicon oxide layer has a processing time between about 1 minute and about 10 minutes.
According to alternative exemplary embodiment, UV curing the silicon oxide layer has an UV wavelength between about 200 nanometer (nm) and about 450 nm.
According to another exemplary embodiment, a method for forming a semiconductor structure includes interacting a silicon-containing precursor with at least one radical nitrogen precursor at a processing temperature of about 150° C. or less to form a silicon-nitrogen containing layer over a substrate, the silicon-containing precursor comprising two silicon atoms. The silicon-nitrogen containing layer is UV cured within an oxygen-containing environment to form a silicon oxide layer.
Additional embodiments and features are set forth in part in the description that follows, and in part will become apparent to those skilled in the art upon examination of the specification or may be learned by the practice of the invention. The features and advantages of the invention may be realized and attained by means of the instrumentalities, combinations, and methods described in the specification.
A further understanding of the nature of some exemplary embodiments may be realized by reference to the remaining portions of the specification and the drawings wherein like reference numerals are used throughout the several drawings to refer to similar components. In some instances, a sublabel is associated with a reference numeral and follows a hyphen to denote one of multiple similar components. When reference is made to a reference numeral without specification to an existing sublabel, it is intended to refer to all such multiple similar components.
Exemplary methods are described for forming a silicon oxide layer having a desired film density, a carbon concentration and/or a wet etch rate ratio (WERR) after a UV curing within an oxygen-containing environment. The UV curing may desirably increase the density of the silicon oxide layer and/or reduce the wet etch rate ratio of the silicon oxide layer.
Some exemplary methods include reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150° C. or less to form a silicon oxide layer over a substrate. The silicon oxide layer is ultra-violet (UV) cured within an oxygen-containing environment. Other exemplary methods include interacting a silicon-containing precursor with at least one radical nitrogen precursor at a processing temperature of about 150° C. or less to form a silicon-nitrogen containing layer over a substrate. The silicon-containing precursor may also comprise two or more silicon atoms. The silicon-nitrogen containing layer is UV cured within an oxygen-containing environment to form a silicon oxide layer.
Process 102 provides a substrate such as substrate 200 (shown in
In some embodiments, process 104 may generate an atomic oxygen precursor outside the deposition chamber. The atomic oxygen precursor may be generated by, for example, the dissociation of an oxygen containing precursor such as molecular oxygen (O2), ozone (O3), an nitrogen-oxygen compound (e.g., NO, NO2, N2O, etc.), a hydrogen-oxygen compound (e.g., H2O, H2O2, etc.), a carbon-oxygen compound (e.g., CO, CO2, etc.), as well as other oxygen containing precursors and combinations of precursors.
In some embodiments, the dissociation of the oxygen containing precursor to generate the atomic oxygen precursor may be done by thermal dissociation, ultraviolet light dissociation, and/or plasma dissociation, among other methods. Plasma dissociation may involve striking a plasma from helium, argon, etc., in a remote plasma generating chamber and introducing the oxygen precursor to the plasma to generate the atomic oxygen precursor.
Referring again to
The silicon precursor may include an organosilane compound and/or silicon compound that does not substantially contain carbon. Silicon precursors without carbon may include silane (SiH4), among others. Organosilane compounds may include compounds with direct Si—C bonding and/or compounds with Si—O—C bonding. Examples of organosilane silicon precursors may include dimethylsilane, trimethylsilane, tetramethylsilane, diethylsilane, tetramethylorthosilicate (TMOS), tetraethylorthosilicate (TEOS), octamethyltrisiloxane (OMTS), octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TOMCATS), DMDMOS, DEMS, methyl triethoxysilane (MTES), phenyldimethylsilane, and phenylsilane, among others.
In some embodiments, the silicon precursor may be mixed with a carrier gas before or during its introduction to the deposition chamber. A carrier gas may be an inactive gas that does not substantially interfere with the formation of the oxide film on the substrate. Examples of carrier gases include helium, neon, argon, and hydrogen (H2), among other gases. Details about forming the silicon oxide layer 220 may be described in a co-assigned U.S. Patent Application, and titled "CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN", the entire contents of which are hereby incorporated by reference for all purposes.
In some embodiments, the atomic oxygen precursors and silicon precursors are not mixed before being introduced to the deposition chamber. The precursors may enter the chamber through spatially separated precursor inlets distributed around the deposition chamber. For example, the atomic oxygen precursor may enter from an inlet (or inlets) at the top of the deposition chamber and configured directly above the substrate. The inlet directs the flow of the atomic oxygen precursor in a direction substantially perpendicular to the substrate deposition surface. In other embodiments, the silicon precursor may enter from one or more inlets around the sides of the deposition chamber. The inlets may direct the flow of the silicon precursor in a direction approximately parallel to the deposition surface.
Additional embodiments include sending the atomic oxygen precursors and silicon precursors through separate ports of a multi-port showerhead. For example, a showerhead positioned above the substrate may include a pattern of openings for the precursors to enter the deposition chamber. One subset of openings may be supplied by the atomic oxygen precursor, while a second subset of openings is supplied by the silicon precursor. Precursors traveling through different sets of opening may be fluidly isolated from each other until exiting into the deposition chamber. Additional details about types and designs of precursor handling equipment is described in a co-assigned U.S. patent application Ser. No. 11/754,924 by Lubomirsky et al, filed May 29, 2007, and titled "PROCESS CHAMBER FOR DIELECTRIC GAPFILL", the entire contents of which are hereby incorporated by reference for all purposes.
As the atomic oxygen precursors and silicon precursors react in the deposition chamber, they form the silicon oxide layer over the substrate. The initial oxide layer has desirably flowability, and may quickly migrate into gaps, openings, trenches, voids, seams, etc., in the structures present at the deposition surface. This allows the method 100 to provide oxide fills that are substantially free of voids and seams in gaps, trenches, and other surface structures. In some embodiments, the trenches 210 formed within the substrate 200 may have high height to width aspect ratios "H/W" (e.g., ARs of about 5:1, 6:1, 6:1, 8:1, 9:1, 10:1, 11:1, and 12:1 or more) as shown in
While not wishing to be bound to a particular theory, the silicon precursors and the atomic oxygen precursors may react to form a silicon oxide that has a high concentration of silicon-hydroxyl group (Si—OH) bonds. These bonds may impart the increased flowability to the silicon oxide layer. The initial silicon oxide layer may contain a level of carbon therein. The Si—OH bonds and/or carbon may increase the wet etch rate ratio (WERR) and dielectric constant of the deposited layer, which can reduce the quality of the deposited oxide, and its effectiveness as a electrical insulator.
Referring again to
The process 112 may densify the silicon oxide layer 220 to the silicon oxide layer 220 a as shown in
Precursor A
Precursor B
Density (g/cc)
Carbon (%)
Post anneal WERR
In Table I, two silicon oxide layers are formed with different carbon concentrations using precursors A or B by, for example, the processes 100-110 described above in conjunction with
For the precursor B with a higher carbon level than the precursor A, it is found that the carbon concentration of the oxide layer is reduced from 6.6 (As-dep.) to substantially close to 0 (post UV-O3). The density (1.4912 g/cc) of the as-deposited silicon oxide layer is increased to about 2.0022 g/cc post UV-O3 curing. The post anneal wet etch rate ratio (WERR) is reduced from more than 30 (As-dep. without any curing) to about 5.0 (with UV-O3 curing). Accordingly, the UV-O3 curing may densify the as-deposited silicon oxide layer and desirably reduce the post anneal WERR of the silicon oxide layer.
According to Table 1, it is also found that the UV-O3 cured silicon oxide layer has a higher density than that of the UV-Ar cured silicon oxide layer or that of the N2 cured silicon oxide layer. The UV-O3 cured silicon oxide layer has a lower post anneal WERR than that of the UV-Ar cured silicon oxide layer or that of the N2 cured silicon oxide layer.
Precursor A
Precursor B
Density (g/cc)
Carbon (%)
Post anneal
In Table 2, the silicon oxide layers indicated with "Precursor A" are subjected to UV-O3 curing at different temperatures, e.g., 100° C., 300° C., 390° C. and 500° C.; and the silicon oxide layers indicated with "Precursor B" are subjected to UV-O3 curing at different temperatures, e.g., 100° C., 200° C., 300° C., 400° C. and 500° C. It is found that the UV-O3 curing may achieve desired density and post anneal WERR of the silicon oxide layers at low processing temperature of about 100° C.
In some embodiments, the dielectric layer 230 may be subjected to a thermal treatment such as an anneal process (not shown). The thermal treatment may desirably densify the dielectric layer 230. In other embodiments, the processes for forming the dielectric layer 230 and the thermal treatment may be optional. The silicon oxide layer 220 (shown in
The method 300 may include introducing the one or more radical nitrogen precursors into the deposition chamber (308). The method 300 may react one or more radical nitrogen precursors and the one or more silicon containing precursors (310) to form a flowable dielectric film with Si—N(H)—Si bonds on the substrate. In some embodiments, the process 310 may have a processing temperature of about 150° C. or less.
In some embodiment, the one or more silicon containing precursors used in the CVD process include multiple hydroxyl groups in their molecular frameworks. The hydroxyl groups are retained in the CVD-deposited film providing a flow-like characteristic of the film that is similar to that of conventional SOG (Spin-on-Glass) film. Because of the flow-like characteristic, the CVD-deposited film based on method 300 tends to be collected in the bottom portion of substrate gap or trench during the deposition, reducing the occurrence of voids around the center of the gapfill or STI trench. In another embodiment, the one or more silicon containing precursors with at least a Si—Si bond in their molecular frameworks include disilane and/or polysilane precursors. The disilanes have a single Si—Si unit in their molecular framework while the polysilanes may have multiple Si—Si bonds. For example, disilanes with different substituents can be used, including alkoxy disilanes, alkoxy-alkyl disilanes, and alkoxy-acetoxy disilanes. In additional examples, disilanes with higher homologues may also be used. Of course, one of skilled in the art would recognize many alternatives, variations, and modifications in the selection of di- and polysilane precursors.
In some embodiments, reactive nitrogen species (such as —N, —NH, and —NH2) used in method 300 may be generated by introducing ammonia (NH3) in a remote plasma system. The remote plasma system may include a separate chamber that is coupled to the deposition chamber. The decomposition of ammonia in the remote plasma system produces radical nitrogen precursors, such as hydronitrene radicals like NH or NH2. Atomic hydrogen (H) radicals may also be generated. For example, hydronitrene and hydrogen radicals are generated in process 306 of the method 300. The radical nitrogen precursors may then be transferred to the deposition chamber where the one or more silicon containing precursors have been independently introduced. For example, the reactive nitrogen precursor may be transferred through a showerhead, while the silicon precursor is introduced through a plurality of fluted nozzles. Details about forming the silicon-oxygen containing layer may be described in a co-assigned U.S. Patent Application, and titled "HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS", the entire contents of which are hereby incorporated by reference for all purposes.
After the formation of the silicon-oxygen containing layer, the method 300 may include UV curing (312) the CVD-deposited flowable dielectric film into a silicon oxide film within an oxygen-containing environment. The UV curing (312) may include a film expansion due to the conversion of Si—N(H)—Si bonds to Si—O—Si bonds that counteracts a film shrinkage due to the removal of some hydroxyl groups from the CVD-deposited film. As a result, the balance of the film expansion and shrinkage leads to a dense, void-free silicon oxide film that also has a reduced probability of cracking due to stresses being introduced during the deposition and anneal.
In some embodiments, the UV curing (312) may be similar to the UV curing (112) described above in conjunction with
In some embodiments, the CVD process includes introducing at least two reactants independently into a deposition chamber and letting them react at a pre-determined condition. In one embodiment, a first reactant can be one type of precursor selected from a group consisting of Alkoxy Disilanes, Alkoxy-Alkyl Disilanes, Alkoxy-Acetoxy Disilanes, and Polysilanes. For example, the Alkoxy Disilanes include Si2(EtO)6 Ethoxy Disilanes, Si2(MeO)6 Methoxy Disilanes, and Si6(MeO)12 Methoxy Cyclohexylsilanes, where Et denotes Ethyl group (C2H6) and Me denotes Methyl group (CH3). In another example, the Alkoxy-Alkyl Disilanes may include Si2(EtO)4(Me)2 Tetraethoxy-Dimethyl Disilanes, Si2(EtO)4(Et)2 Tetraethoxy-Diethyl Disilanes, Si2(EtO)2(Me)4 Diethoxy-Tetramethyl Disilanes, Si2(MeO)4(Me)2 Tetramethoxy-Dimethyl Disilanes, and Si4O2(Me)8 Methyl Cyclohexylsiloxanes, Si6(MeO)6(Me)6 Methoxy-Methyl Cyclohexylsilanes, Si4O2(H2)4 Hydro-Cyclohexylsiloxanes. In yet another example, the Alkoxy-Acetoxy Disilanes may include Si2(AcO)6 Acetoxy Disilanes, Si2(Me)4(AcO)2 Tetramethyl-Diacetoxy Disilanes, and Si2(Me)2(AcO)4 Dimethyl-Tetracetoxy Disilanes, where Ac denotes Acetyl group. And in yet still another example, the polysilanes includes cyclopentylsilanes or other subinstitutes. Either one of these precursors mentioned above may be supplied into the deposition chamber without meeting any of the other reactant for the CVD process.
In other embodiments, the other reactant for the CVD process may be a second reactant including radical nitrogen species generated from remote ammonia plasma. For example, the radical nitrogen species may include nitrogen ions, hydronitrene radicals NHx, where x=1, or 2. Because in the molecular frameworks of those Disilane or Polysilane based precursors there is at least a Si—Si bond which is highly reactive, the CVD process may result in a product containing a plurality of Si—N(H)—Si bonds in addition to hydroxyl groups and carbon-based species. For example, the product is a silicon carbonitride film deposited on the substrate. The CVD-desposited silicon carbonitride film is amorphous and flowable due to the existence of those hydroxyl groups and carbon-based species.
In some embodiments, the subsequent UV-O3 curing within an oxygen-containing environment induces another chemical reaction between the silicon carbonitride film and oxygen (O). This reaction is an oxidization process in which the Si—N(H)—Si bond in the silicon carbonitride film is converted into Si—O—Si bond, resulting a formation of an silicon oxide film. One side product may include NH3 ammonia which can be immediately pumped out through an exhaust system built for the chamber.
Where a range of values is provided, it is understood that each intervening value, to the tenth of the unit of the lower limit unless the context clearly dictates otherwise, between the upper and lower limits of that range is also specifically disclosed. Each smaller range between any stated value or intervening value in a stated range and any other stated or intervening value in that stated range is encompassed within the invention. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and each range where either, neither or both limits are included in the smaller ranges is also encompassed within the invention, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included in the invention.
As used herein and in the appended claims, the singular forms "a", "and", and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a process" may includes a plurality of such processes and reference to "the nozzle" may include reference to one or more nozzles and equivalents thereof known to those skilled in the art, and so forth.
Also, the words "comprise," "comprising," "include," "including," and "includes" when used in this specification and in the following claims are intended to specify the presence of stated features, integers, components, or steps, but they do not preclude the presence or addition of one or more other features, integers, components, steps, or groups.
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|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Dec 3, 2007
Owner name: APPLIED MATERIALS, INC., CALIFORNIA
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Effective date: 20071116
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Steve Hackett
The Los Endos SuitePhil Collins Big Band Instrumental Chart. A brilliant jazz concert arrangement of the Genesis music by Harry Kim (Phil Collins' lead trumpeter). Some limited sax doubling on clarinets and flutes. The best way to get an idea of the scale and excitement of this chart, and the variety of rock and latin rhythms, is to listen to the "A Hot Night In Paris" album. NOTE: The sample MP3 is a live recording of our actual published chart. Learn More£40.00

subset: commoncrawl


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Love has to be harmonious. Love has to be a matter for my mind. Love has to be pleasure, for desirable lasting. Love is a long-term emotional and intellectual attachment to involve active interest of no aggressive aspect.
Category: psychology
Hardly anyone, if anyone at all, would walk into a pub to tell the people they are delusive, if they think they have wits. The people in this movie have earthly living for an illusion.
Sjæl og Videnskab is a Danish production to show doctors as well as people talk about near-death. I happen to wonder if there would be language after death.


text:
60 Shepherd Drive Lithia Springs, GA 30122
- Listing Status Active
- Neighborhood Old Douglas Manor
- County Douglas
- Year Built 2000
- Home Size 2452 sq.ft. (Source: tax record)
- Sale Type Normal sale
Immaculate 2 story 4 sided brick Traditional with Master Suite on the main level and a full unfinished basement. Original owners. Vaulted ceilings in large open family room with brick fireplace. Formal Living Room. Oversized Dining Room with hardwood floors. Kitchen has solid wood stained cabinetry w/under cabinet lighting, Corian countertops, hardwood floors. Elegant Master Suite w/trey ceiling . Master Bath has tile floor, jetted tub, separate shower and opens to covered porch. Large secondary bedrooms. Covered porch and Deck with lake views in fall and winter.
- Listing Status Active
- Neighborhood Old Douglas Manor
- County Douglas
- Year Built 2000
- Home Size 2452 sq.ft. (Source: tax record)
- Sale Type Normal sale
- Elementary Annette Winn / Douglas / Douglas County, GA
- Middle
- High Lithia Springs / Douglas / Douglas County, GA
Listing provided courtesy of KELLER WILLIAMS REALTY. Listing data displayed on this page comes from the Broker Reciprocity program of Georgia MLS. This information is considerd reliable but is not guaranteed.
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Listings identified with the FMLS IDX logo come from FMLS, are held by brokerage firms other than the owner of this website and the listing brokerage is identified in any listing details. Information is deemed reliable but is not guaranteed. ©2014 First Multiple Listing Service, Inc.
© 2014 North East Georgia MLS. the information provided is for the consumer's personal, noncommercial use and may not be used for any purpose other than to identify prospective properties that the consumer may be interested in purchasing. Some or all of the listings displayed may not belong to the firm whose web site is being visited.


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Vote for Knight Rider KITT LEGO CUUSOO Set
This awesome 1982 Pontiac Firebird KITT car from Knight Rider is currently vying for votes on LEGO CUUSOO. Throw KITT and Michael some support and vote for it now.
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Two scientists challenging Albert Einstein, who believed that the speed of light is a constant. But according to the new study, the speed of light is variable.
Einstein believed that the speed of light-186,282 miles per second (299,792 kilometers per second)-stays the same in every situation, and this meant that time and space could be different in different situations.
The assumption of Einstein and scientists after him that the speed of light is, has been and always will be constant, is the basis of many theories in physics, including Einstein's Theory of General Relativity.
A constant light-speed, in particular, plays a role in models of what occurred in the very early universe, within seconds of the Big Bang.
Researchers suggesting that the speed of light varies have come up with a numerical prediction that will allow their theory to be tested. All structures in the universe today were created when fluctuations occurred in the early universe. The spectral index is the record of these fluctuations that is now integrated into the cosmic microwave background.
They've given the fluctuations in density the early universe, detectable through cosmic background radiation, an exact spectral index number based on the theory that light was much faster in the first seconds following the Big Bang (0.96478, if you're curious). If future measurements of the index line up with this number, they'll support the notion that light speed has shifted.
If the variable light speed concept is ever proven right, though, it would change our understanding of how the universe expanded.


text:
1972 Rolex Datejust Reference 1603 With Rare Sigma Linen Dial
Why This Watch Matters
Although it may seem like vintage Datejusts are everywhere, it's not often you find one with an incredible grey linen Sigma dial like this one.
The Full Story
The Datejust is the quintessential Rolex, a precise tool watch that looks good with just about everything. The 1603 we have here survived the 1970s unscathed, with a splendid grey linen dial, while most linen dials are silver. You can also see the sigma symbols on the bottom of the dial indicating that the hands and indexes are gold (white gold in this example). Additionally, you get the characteristic stainless-steel bezel of the reference 1603, which is more understated than the white-gold fluted bezel of its sister reference 1601. In our opinion, this is a pretty special Datejust.
The Fine Print
Maker: Rolex
Model: Datejust
Reference: 1603
Year: 1972
Case No: 3328xxx
Material: Stainless Steel
Dimensions: diameter 36mm; thickness 12mm
Sapphire Crystal: No
Lume: Tritium
Caliber: Caliber 1570 automatic-winding movement
Bracelet/Strap: Folded Rolex Jubilee With 55 end links
Lug Width: 20mm
Box/Papers: No
The Nitty Gritty
Not much to complain about here. This Datejust is in a great vintage condition, with the expected previous polishings but nothing offensive. The dial is very striking as it is not often you find a grey linen sigma dial such as this. The patina on the hands matches the lume plots, all whole and present. The folded Jubilee could obviously be tighter but it wears very comfortably, enhancing the vintage feel of this 1603.
The HODINKEE Guarantee of Authenticity
First and foremost, we certify that this watch is authentic and guaranteed to be as described to the best of our knowledge. Nothing is more important to us than a clear and transparent transaction that makes our end-consumers happy – so if something goes wrong, you have our word that we will do everything possible to make it right.
30-Day Mechanical Warranty
Each watch is guaranteed by a 30-day mechanical warranty that we believe to be the most comprehensive in the industry. We stand behind every item we sell, though due to the nature of vintage watches, we expect reasonable treatment of all watches by their owners. Each watch is known to be working before shipment, though we make no statement about mechanical accuracy or waterproofing.
Each watch is covered by a no-questions-asked five day inspection period. The watch, however, must remain unworn and unmolested within that period of time – and in the same condition in which it left HODINKEE. If a return is requested, simply email email@example.com and we will respond with instructions. Insured shipping for returns must be paid for by the buyers and buyers assume all risk.
Orders placed Monday through Friday from 9:00 A.M. EST to 5:00 P.M. EST may be edited or cancelled within 1 hour of order placement. Orders that are shipped before a cancellation has been confirmed must be returned according to the guidelines featured above.


text:
Question: Show that if Y x is linear in x and var Y x
Show that if µY|x is linear in x and var(Y|x) is constant, then var(Y|x) = σ22 (1 – ρ2).
View Solution:
View Solution:
Answer to relevant QuestionsThe following data represent more extended measurements of monthly water usage at the plant referred to in Exercise 14.98 over a period of 20 months: (a) Use an appropriate computer program to fit a linear surface to these ...Find the least squares estimate of the parameter β in the regression equation µY|x = βx. Given the joint destiny Find µY|x and µX|y. Verify that the formula for t of Theorem 14.4 can be written as Theorem 14.4 Under the assumptions of normal regression analysis, Is a value of a random variable having the t distribution with n – 2 degrees of freedom. If x01, x02, . . . , x0k are given values of x1, x2, . . . , xk and X0 is the column vector It can be shown that Is a value of a random variable having the t distribution with n- k- 1 degrees of freedom. (a) Show that for k ...
Post your question


text: Steve Madden P-MEKO $49.99 $149.95 + Free Shipping 6PM Coupons See Deal Flag this deal Edit deal What's the matter? Choose a reason Dead deal Duplicate Bad link Spam Inaccurate No value Alive again Comments (1) dvinegrace83 Feb 18, 2013 Those are super cute! I do like the feel of wedges better than regular heels, too. Reply Cancel Load More Comments


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What is JotForm?
JotForm is a free online form builder which helps you create online forms without writing a single line of code. No sign-up required.
At JotForm, we want to make sure that you're getting the online form builder help that you need. Our friendly customer support team is available 24/7.
We believe that if one user has a question, there could be more users who may have the same question. This is why many of our support forum threads are public and available to be searched and viewed. If you'd like help immediately, feel free to search for a similar question, or submit your question or concern.
How can I implement my edited source code?Asked by PissedOff on June 17, 2016 at 11:18 PM
I have an edited source code that I created to remove all other country options aside the United States. I contacted my website hosting service "BlueHost.com" to ask them where I would overwrite the existing source code file, and they directed me back to you, Jotform. Can you explain how I can do this?
Thank you!
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Unfortunately, it is not possible to implement your custom code to JotForm, for example, if you have removed the options from a drop down, you will need to add your custom list in the options section in our Form Builder:
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We will wait for your response.


text:
Saturday 14 August 1926
It was Saturday, under the sign of Leo. The US president was Calvin Coolidge (Republican).
Famous people born on this day include Alice Adams and Lina Wertmuller.
The Scarlet Letter, directed by Victor Seastrom, was one of the most viewed movies released in 1926
But much more happened that day: find out below..
You can also have a look at the whole 1926 or at August 14 across the years.
Old Newspapers
Have a look at the old newspapers from 14 August 1926 and get them!
Which were the most popular movies released in the last 30 days ?
Find out your future
Get a FREE Numerology report based on the digits of 14 August 1926!
Wish him/her..
Historical Events
Which were the important events of 14 August 1926 ?
- Paraguay - Flag Day
- St. Maximilian Kolbe
- Roman Catholicism - the feasts of several saints: St. Eusebius of Rome
- United States - National Code talkers Day
- Pakistan - Independence Day
- RC saints - Maximilian Kolbe (Polish Franciscan priest martyred by Nazis in 1941)
- Morocco - Allegiance of Oued Eddahab or Rfo de Oro
- United States - National Creamsicles Day
Famous Birthdays:
- Alice Adams: US author.
- Lina Wertmuller: Italian film director.
- Buddy Greco in Philadelphia: Pennsylvania, USA; singer ("Away We Go", Broadway Open House).
- Alice Ghostly in Montana: USA; actress (Bewitched, With Six You Get Egg Roll).
- Rene Goscinny: French comic-strip author (d. 1977).
- Agostino Cacciavillan: Italian Roman Catholic priest, ordained a Cardinal on 1/21/2001 by Pope John Paul II.
- René Goscinny: French artist, illustrator, cartoonist, and comic strip maker. He co-founded the French comic weekly "Pilote" 1959, where his creation "Astérix" made its debut.
- Buddy Greco: American singer and pianist
Famous Deaths:
- John H Moffitt: American politician (Born 1843).
Music Charts
Which were the top hits in that special week of August 1926 ?
Top #4 songs in the USA
- Bye Bye, Blackbird - Nick Lucas
- Am I Wasting My Time on You? - Lewis James
- The Blue Room - Melody Sheiks (Sam Lanin & His Orchestra)
- But I Do, You Know I Do - Ruth Etting
Search For Your Ancestors
Subscribe to our Newsletter
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...and if 14 August 1926 was your Birth Date then Join our Birthday Club!
Make this date unforgettable
Genealogy: find out your family heritage
Which were the most popular books released in the last weeks ?
Remember when
What videogames would you be playing back in the days ?


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|Message view
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|Justin Erenkrantz <jerenkra...@apache.org>
|Re: apr_proc_other_child_read examined in depth
|Wed, 29 Jan 2003 06:00:21 GMT
--On Tuesday, January 28, 2003 11:48 PM -0600 "William A. Rowe, Jr." <email@example.com> wrote: > Just more observations, another pair of eyeballs might come in > handy. I can't say I know much about OC logic, and I don't really have time to investigate this, but... > -1 on 0.9.2 till this issue is resolved. I don't really see why we should hold off on 0.9.2 because the current API is broken. We're not saying it is 1.0. Or, do you plan on holding httpd 2.0.45 back as well? If you still plan to have 2.0.45 out soon and your offer to co-RM 0.9.2 at the same time holds, then waiting is fine with me. Otherwise, we should look at getting someone else (Garrett?) to RM. =) And, are you going to be able to fix this in a way that doesn't blow up backwards compatibility with httpd's 2.0.42+? -- justin
|View raw message


text:
The Angels open up their final three-game series of the season at Angel Stadium with a 7 pm game against the division champion Oakland A's.
The A's, who clinched Sunday, are still using pretty much all of their regulars. They still have a shot at catching the Boston Red Sox for the best record in the league, which would not only give them home-field throughout the playoffs, but allow them to play the wild-card winner.
Angels Manager Mike Scioscia said he's impressed with what the A's have done, winning the division two years in a row.
"It's a great run," Scioscia said. "You have to tip your cap to them. They have put together two seasons that are championship caliber."
The Angels will send Garrett Richards to the mound against Tommy Milone, who got the start in place of A.J. Griffin after the A's clinched.
Here's the Angels lineup…
Erick Aybar SS
Kole Calhoun RF
Mike Trout CF
Howie Kendrick 2B
Josh Hamilton DH
Mark Trumbo 1B
Chris Iannetta C
Collin Cowgill LF
Andrew Romine 3B
And the A's…
Coco Crisp CF
Josh Donaldson 3B
Brett Lawrie DH
Brandon Moss 1B
Alberto Callaspo 3B
Josh Reddick RF
Seth Smith LF
Stephen Vogt C
Eric Sogard SS


text:
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May 28, 2015 | Loyalty Programs, Rewards
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You work too hard for your money to throw it all away on full price when you don't have to!
© adjump 2011 All Rights Reserved No part of this website or any of its contents may be reproduced, copied, modified or adapted without adjump's prior written consent.


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|£17.95 (inc. VAT)
|£15.95 (inc. VAT)
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This is a nice looking and nice feeling product. The leatherette cover material, mimics a premium soft leather very well, it is highly matte and not remotely reflective. It really does look great, but I suspect that in being so soft, it could mark quite easily if not treated carefully.
The inside cover and sleeves are made from a coarse black fabric, which does serve to hold/grip the cards quite well, reducing the chances of cards falling out. The coarseness of this material shouldn't represent potential risk of damage to any valuable cards you might wish to store in this folder, as they should of course be double sleeved anyway, but if they are not, then give this some consideration.
It's worth mentioning, that this folder isn't very strong and if stored awkwardly for a period of time, could quite easily bend out of shape. This could of course, potentially result in the warping of any cards you may have stored inside.
Also worth mentioning, is this folder is sealed with an elastic strap and doesn't have a zip. So if the presence of a strap, hasn't automatically lead you to assume the absence of a zip, then bear this in mind.
Talking of straps, the elastic strap on this folder is quite loose fitting, which is doubtless necessary, given the delicacy of the leatherette material and only time will tell if it's up to the job. Having said that, my short term experience with it, has left me with the impression that I wont be wanting to open and close this folder more often than I have to.
Thus, I would say that this folder is better suited to collecting, than trading. It's premium look and feel, is perfect for storing your Moxen and promotional foils, but its delicate construction and vulnerability to marking, means that there are undoubtedly more robust folders out there for trading(e.g. Legion Supplies Elder Dragon series).
All in all, I purchased four of these folders, black, brown, grey and "off white" and have to say that the leatherette material seems better complimented by the lighter colors, which better pronounce its texture, but that's not to the say that the black folder looks at all bad, I'm pleased with all four.


text:
A few days before their playoff series begins, the San Antonio Spurs and Denver Nuggets are likely to rely heavily on their benches in what amounts to a meaningless regular-season finale on Wednesday night.
With the Spurs (58-23) having secured the third seed in the Western Conference and the Nuggets (44-37) having clinched the sixth spot, Denver will be in San Antonio again this weekend to open its first-round series.
Both clubs may sit out or limit the minutes of key players in this game to rest up for the postseason.
The Spurs already used that tactic, giving Tim Duncan, Tony Parker and Manu Ginobili the night off Monday as the team lost 101-91 at Memphis. While Duncan missed a game for the first time all season, reserve Brent Barry also was inactive with a "tummy ache."
"It's a fine line between staying away from injury and giving the body a little bit of a break," Spurs coach Gregg Popovich said. "But as much as the body, it's the mental side of it. This late into the season, I don't think somebody is not going to get into or out of shape."
If Popovich decides to rest the stars again, San Antonio could have reserves Jacque Vaughn and James White in the backcourt with Jackie Butler in for Duncan. White, a rookie out of Cincinnati, scored a career-high 17 points Monday as he and Butler, who had 12 points and 10 rebounds, made their first career starts.
The Spurs have won both season meetings with Denver, including a 95-80 victory on Feb. 20 at the AT&T Center. The teams have split the last four matchups in San Antonio after Denver had lost eight in a row there. The Spurs have won 16 of 17 home games overall.
The Nuggets also expect to employ their reserves after coach George Karl monitored his starters' minutes in a 122-107 win over Minnesota on Monday.
"I don't know how to handle this week other than get ready for San Antonio," Karl said. "I'm happy that we responded and played a good third quarter. But the energy and focus of the last two games have made me nervous. But I think we're all anxious to play San Antonio, which is a good thing. But five days waiting for them may not be a good thing.
"It should be a real interesting game in San Antonio on Wednesday night."
Karl might decide to rest Carmelo Anthony, Allen Iverson and Marcus Camby on Wednesday. Anthony and Iverson played limited minutes against the Timberwolves and Camby was rested with a sore right knee.
Linas Kleiza, who got his first career double-double Monday with 23 points and 10 boards, might get his first start since Feb. 23.
The Nuggets clinched their playoff spot behind a 9-1 April surge. One more win will give the club its best record in the month since joining the NBA in 1976.
2006-07 Stats at a Glance
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text:
Saint Tone Sarasota, Florida
Saint Tone is a motivational Musician who writes Positive Pop Rock Songs. Tony writes in a wide variety of styles that combine pop, rock, country, rap, and RnB. Each song has a a unique message and sound. His topics are about self empowerment, unity, power, spirituality, etc and nothing to do about religion. ... more
Streaming and Download help


text:
Where Is The Old Bob Dole?
By Alice M. Rivlin;
Published: June 23, 1993
WASHINGTON— I have such a longstanding respect for Senator Bob Dole that I fantasize that the old Bob Dole -- the responsible statesman -- will weigh back into the budget debate.
He was one of the first Republicans to recognize that the towering Reagan deficits endangered the health of the economy. Ignoring the political risk, he stood up to his own President, who offered supply-side nostrums, blithely talking about "growing out of the deficits" and minimizing their size by basing projections on rosy scenarios.
The old Bob Dole cut through the malarkey. He knew the Government was living beyond its means, borrowing the nation's savings, punishing farmers, home buyers and investors with high real interest rates. He knew there were no easy answers, that deficit reduction required tough political compromises involving spending cuts and tax increases.
The old Bob Dole, as Finance Committee chairman, then majority leader and finally minority leader, took on two Presidents of his own party, in 1982, 1985 and 1990, to try to tame the deficit. He got precious little White House support but kept fighting for saner fiscal policy.
Now, finally, we have a President who is leading the fight for fiscal responsibility. Bill Clinton did not have to be urged or cajoled. His first priority was an economic plan to reduce the deficit by $500 billion over five years. His plan included unpopular tough spending cuts: Well over 100 domestic programs would be cut by $100 million, including reductions in Medicare and agricultural subsidies and deep cuts in Government administrative costs and personnel. It called for tax increases on those most able to pay and a broad tax on energy. It showed the reductions in Federal interest costs that would result from the lower deficits.
The plan was balanced and fair: roughly half the deficit reduction would result from spending cuts, half from tax increases that would fall overwhelmingly on the most well-off Americans. And the numbers were real: The estimates rest not on a rosy scenario but on the Congressional Budget Office's conservative assumptions, also used by the Congress.
Congress passed a resolution reflecting the main features of the plan. In working with it, we agreed to cut the deficit even more than our original proposal would have by putting a "hard freeze" -- no adjustment even for inflation -- on discretionary spending programs. A reconciliation bill passed the House with only slight modifications in the Administration's basic design. The Senate Finance Committee reached the same deficit reduction target, with differences in some tax and spending cut components; passage of its bill this week would move action to a conference. Next, appropriation action consistent with the budget resolution would lock in spending cuts, so that half of all deficit reduction would come from those cuts. Indeed, under the Clinton plan, all discretionary spending would be frozen for five years. No other President has been so courageous. The old Bob Dole would have lead the cheering.
Instead of pitching in to help solve the deficit problem, Mr. Dole is sabotaging the effort with misleading rhetoric. He says the Democrats' plans are mostly tax increases because some of their spending cuts do not count. He claims the appropriation cuts should not count because the budget resolution caps might not hold. (Why not? Those in the 1990 agreement held, and Congress is more serious about deficit reduction now than it was then. So is the electorate.) He says cuts in interest costs should not count. (Why not? It's real money and he was happy to count it in the 1990 agreement.) He says cutting Federal subsidies by charging higher user fees is really raising taxes, although longstanding budgetary practice and common sense say otherwise. He talks vaguely about controlling entitlement spending, but offers no specific proposals.
The old Bob Dole would have had little patience with such nitpicking. He knew deficit reduction is tough, requiring not only tax increases and spending cuts but user fees and interest cost cuts. He would have recognized the Administration's plan, in the House or Senate versions, as a balanced package of politically difficult changes, pleasing no one but designed to get the job done. I still respect him, but I sure miss the old Bob Dole.


text:
- FitnessVote A
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- DancingVote E
- Dating tipsVote F
- General tips/otherVote G
Most Helpful Girl
My sister and I thought about doing a YouTube channel for both video games and cooking once before.31|20|0
Things you can cook out of the corner of your eye, so you can finish this one Damn level! lol
- Show AllShow Less
I go where I'm needed lol
Stick to gaming its money is easier😬
Most Helpful Guy
I was actually going to make a youtube channel with a friend/future roommate and play original songs and covers on it. He covers the guitar/singing parts while I do the drums/bass/keyboard. I also know technical stuff with editing in logic so I got that covered too :D
Like right now we're both learning Under A Glass Moon by Dream Theater and Through Fire And Flames by Dragonforce. Some Children of Bodom covers may wind up in it too. Mostly it is going to be original stuff I've been writing for the last year or so. It's basically our fun metal break from the easier blues rock band stuff we're together in lol. Metal is the stuff we truly have a passion for so didn't want to forgo it for blues.
We're not much for cameras, so it's going to be mainly music. We may do a fun extra non music video here and there, but we both want to focus on the music aspect.
... Or I mean we could always do reaction videos and just stare at a screen silently and ripoff other people's content haha jk10|10|0
I think ur idea is listed under great ideas. here's a one sub from me.☺


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Links Sort by: PageRank | Hits | Alphabetical
|Raheja Productions, Raheja Wildlife Ltd, Leading Producer of Wildlife Films - http://www.rahejaproductions.com
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text:
We're currently developing a premium style for XenForo which we are planning to sell for $20. We started off our style by duplicating the default XenForo Style, and then making our template and style customations from there. We've got a lost of pretty heavy customizations in the style right now - but, there is still quite a lot of unchanged template code and icons which are from the original, default XenForo style.
Are there any issues with releasing a (paid) beta of the style which would contain images / css / template HTML from the original XenForo style?
Any thoughts, @Kier and @Brogan ?


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You have nothing to lose. Give us a call to unload some of your worry. Call us for a free consultation.


text:
The Dorset Walk — Puncknowle and West Bexington
Matt Wilkinson and Mark Bauer explore Chesil Beach and its hinterland
Published in July '08
|The parish church of St Mark in Puncknowle
Puncknowle, where the walk starts, is perhaps not as superficially pretty as its neighbours in the Bride Valley such as Litton Cheney and Long Bredy, but stay in the village long enough and you become aware of its pleasant, peaceful atmosphere. Its two best-known features are, perhaps, the pronunciation of its name (to rhyme with 'funnel') and the fact that members of the 1950s Portland spy ring would rendezvous in the village pub.
The route skirts the back of its neighbouring village of Swyre, the birthplace of Major-General Henry Shrapnel (1761-1842), who developed the battlefield weapon that bears his name.
After enjoying views from the ridge, the walk descends to Chesil Beach, the extraordinary line of pebbles that extends from Portland to Burton Bradstock (or the full eighteen miles to West Bay – it depends on which definition you take). The small size of the pebbles underfoot on this walk shows that we are towards the western end: not the least remarkable thing about Chesil Beach is that the sea grades the pebbles by size, the largest being at Portland and the smallest at Burton Bradstock (or West Bay).
|Sunset on Chesil Beach
In the 1930s there was a plan to develop West Bexington as a major resort. Most of the bungalows and houses date from then, but the scheme never got off the ground and what is left is basically one street running down to Chesil Beach and creating one of Dorset's odder villages. The Manor House, now a hotel, dates from the 16th century.
On the way back to Puncknowle, the walk diverts to the Knoll, a landmark on the coast road with its tiny house on top, from which coastguards once kept watch. The view from here is the whole sweep of Lyme Bay from Portland to Start Point; turn round and you can look inland over most of the West Dorset hills. It must be one of the county's outstanding viewpoints.
The walk is comparatively short, but the going can be muddy after wet weather, the pebbles of Chesil Beach don't make for the easiest conditions underfoot and the climb up from West Bexington is a steep one. You may find that it takes you as much time as a route which is a mile or two longer.
Distance: About 4½ miles, including the ½-mile diversion to The Knoll.
Start: Park considerately on the village street in Puncknowle, near the church and the Crown Inn. OS ref SY535887.
How to get there: Take the B3157 coast road between Weymouth and Bridport. By the Bull Inn, about 4 miles from Abbotsbury and 3 miles from Burton Bradstock, turn north into Swyre. Follow the road round to the right at the end of the village to enter Puncknowle.
Maps: OS Explorer OL15 (Purbeck & South Dorset); OS Landranger 194 (Dorchester & Weymouth).
Refreshments: The Crown at Puncknowle, the Bull at Swyre and the Manor at West Bexington. There is also a café by the car park at West Bexington.
|The Knoll is one of West Dorset's landmarks
1. Walk along the village street with the church on the left and the Crown on the right. Ignore a public footpath on the left, signed 'Knackers Hole, Open Space and Clay Lane.' Continue for 80 yards to a path on the left just beyond the old Wesleyan chapel, signed 'Swyre and Bull Inn'. Pass to the right of a barn and cross a stile into an open field. Turn right and follow the field-edge round to the far right-hand corner. Here turn right, down onto a semi-paved track, and turn left. Follow the track straight ahead as it becomes an enclosed grassy path. This leads to the main road, with the Bull Inn immediately on the left. Turn right and, ignoring the first signpost to 'Chesil Beach and Coast Path' almost immediately on the left, walk carefully along the main road for 175 yards.
2. Turning left onto a track at a similar sign, just before a farm drive on the right. Follow the track as it bends to the right and continues with striking sea views to the left. In about 1000 yards, turn left onto a wide grassy path down the left-hand edge of a field; it is the first field-edge off the track that leads all the way down to the beach. Near the bottom of the field is a comparatively well-preserved World War 2 pillbox with impressive fields of fire. At the bottom of the field, go through two gates in quick succession and turn left onto the pebbles of Chesil Beach.
3. Walk along the beach for just over a mile to West Bexington. On the other side of the car park, turn left to walk up through the village. As the road swings to the left just after Tamarisk Farm, continue straight ahead up a stony track. Its signpost to 'Hardys Monument 6 and Osmington Mills 10′ seems rather bizarre until one realises that it is the inland alternative to the Coast Path. Follow the track right up to the main road, where continue straight across onto a lane.
4. Shortly after the first rise, cross a stile on the left and follow the right-hand field-edge straight ahead, up and round to The Knoll. Admire the views and wonder at the way of life for the coastguard in this tiny lookout, which nevertheless had a fireplace and a privy at the back. Retrace your steps to the lane, turn left and walk for ½ mile to the Puncknowle village sign. Immediately beyond it, turn left onto a track and follow it as it curves round to the right. It leads downhill and through the buildings of Manor Farm to reach the village street. Here turn left to return to the church, the pub and your car.
|The view south-east from the Knoll


text: Thanks for the reply. I am afraid my question is really what is it that I need to download, rather than where to download it from. I do I find out exactly which RPMs I need to download to get from 6.1 to 6.2? Sorry about the confusion, --Moby -----Original Message----- From: Uncle Meat [mailto:kcsmart worldinter net] Sent: Tuesday, May 23, 2000 18:40 To: redhat-list redhat com Subject: RE: Upgrade from 6.1 to 6.2 On 23-May-00 Mobeen Azhar opined: > Hello all, I have a rather newbie question, so please bear with me! I > just > purchased and installed RedHat Linux 6.1 and everything is up and running > fine - so far! I would like to upgrade to RedHat Linux 6.2. Is there a > way > to download just the deltas and upgrade the system? or does it require > me > to either buy 6.2 or download the whole 6.2 image? > > Thanks in advance for any help, Try looking here for a list of places that will let you download only what you want. http://www.redhat.com/mirrors.html --- Who are the Brain Police? -- To unsubscribe: mail redhat-list-request redhat com with "unsubscribe" as the Subject.


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