text:
Airto Moreira - I'm Fine, How Are You (1977) MP3
From Album I'm Fine, How Are You (1977) by Migno65.
How are you? I'm fine. (Greeting song) - English song for Kids - Exciting song MP3
https://www.youtube.com/user/englishsingsing9 How are you? - I'm fine. - English song for Kids - Let's sing - Sing Along Here is Great Educational Songs ...
Hello. How Are You? I'm fine. NOT Part 2 MP3
Learn Ilocano: Say How Are You? And I'm Fine. MP3
Naimbag nga rabii everyone! :) Here's another basic Ilocano phrases for our short video tonight. Let's learn "how are you?" and "I'm fine" in Ilocano. * How are ...
Bob Baldwin - I'm Fine How Are You MP3
Apr 07, 1992 " Relections of Love " Album http://www.amazon.com/gp/product/B00130RDPQ/ref=dm_sp_alb ...
When a woman says I'm fine MP3
the words I'm fine coming from a Woman are really a cry for help.
Learn English - British English in Three Minutes - I'm Fine MP3
Click here to get our FREE App & More Free Lessons at EnglishClass101: http://www.EnglishClass101.com/video Learn common conversation topics with our ...
Airto Moreira - I'm Fine, How Are You? - 1977 [Brazil] MP3
From "I'm Fine, How Are You?" album (Warner Bros, 1977)
I'm Fine How Are You? MP3
What happens when you mix a traditionally southern woman, a holiday meal and full term labor? Well you get good manners of course, no matter what the cost!
Bob Baldwin - I'm Fine, How Are You? MP3
From The 1992 CD Album "Reflections Of Love"
I'm fine, how are you MP3
Lyrics by Cory Pitkavish Music by Chris Miller and Cory Pitkavish Recording Chris Miller-Drums, Guitar, Bass, Backing Vox Cory Pitkavish-Lead Vox.
Learn Thai: #2 How are you? I'm fine, thank you. MP3
Welcome back to Thai101! In this lesson, you'll learn how to say "How are you?" "I'm fine, thank you." in both formal and informal situations. If you have any ...
I'm Fine, How Are You? MP3
Provided to YouTube by Warner Music Group I'm Fine, How Are You? · Airto Moreira I'm Fine, How Are You? ℗ 1977 Warner Bros. Records Inc. for the United ...
[Vietsub] How are you. I'm fine, thank you - HaHa MP3
Brought to you by KSTM Download free at KST.NET.VN.
BOB BALDWIN - I'm fine, how are you? - 1992 MP3
BOB BALDWIN - I'm fine, how are you? - 1992.
Ukrainian Lesson 6. Ukrainian Lesson. How are you? - I'm fine! MP3
How are you? - Yak spravy? (Як справи?) I'm fine - Vse dobre (Все добре) I'm not bad - Nepohano (Непогано) I'm bad - Pohano (Погано)
Hello. How Are You? I'm Fine. NOT! MP3
Momona, she is very cute.
ESL- Hello! How are you? I'm fine. I hope that you are too! MP3
my grade 1/1 & 1/2 classes combined when their teachers were absent, I was asked to baby sit them the whole day!!!
Old Man Luedecke - I'm Fine (I Am, I Am) MP3
Recorded live on the beach in Chester, NS with Old Man Luedecke and Joel E Hunt on mandolin. From the new album Tender is the Night, released October ...
Breanna Youn : Hi, how are you? I'm fine Thank You. MP3
FOLLOW Breanna Youn's OFFICIAL ACCOUNTS : FACEBOOK : https://www.facebook.com/IamBreannaYoun TWITTER : https://twitter.com/IamBreannaYoun ...
[MV] Sung Soo Jin(성수진), Nam Young Joo(남영주) _ I'm fine MP3
[MV] Sung Soo Jin(성수진), Nam Young Joo(남영주) _ I'm fine *English subtitles are now available. :D (Please click on 'CC' button or activate 'Interactive ...
I'm Fine, Thank You How Are You? by Murong Xuecun MP3
Sean Paul - So Fine MP3
Sean Paul So Fine first single from new album "Imperial Blaze" http://www.allseanpaul.com/ http://www.facebook.com/seanpaul http://www.twitter.com/duttypaul ...
Andy Grammer - Honey, I'm Good. (Official Music Video) MP3
"Honey, I'm Good." Music Video Available worldwide! Download "Magazines Or Novels" on iTunes: http://smarturl.it/HIG_UK2 ...
How are you? - I'm fine. - English song for Kids - Let's sing - Sing Along MP3
How are you? - I'm fine. - English song for Kids - Let's sing - Sing Along Here is Great Educational Songs . How Are You ? I'm Fine Thank You - English Song For ...
Khmer Lesson 6 - How are you? Yes, I'm fine MP3
How are you? Yes, I'm fine. (Note: I made this lesson in a hurry because I had to go kick it, so I made a few mistakes. I forgot to put "srah Oh" under "saw".)
Airto Moreira I'm Fine, How Are You 1977 Brazil MP3
Jazz Funky Rare Groove Blues Soul Disco Brasil Easy Listening Library Blaxploitation Soundtrack B-Movie '60s -'70s ONLY '60 & '70 !!
Day One - I'm Doing Fine MP3
Day One are an English band from Bristol, formed in 1999, and consisting of Phelim Byrne and Matthew Hardwidge. They were originally signed to ...
'Captain I'm Fine And Thank You For Everything' - Right Away, Great Captain! MP3
This is track [15/15] to Andy Hull's 17th century epic, Right Away, Great Captain! In which a sailor undergoes the tragic feeling of betrayel as his own brother has ...


text:
There are two types of emergency as the army recruitment notice
Bangladesh Army recruitment notice has been published. Engineers, Signals and EME Corps and Armed Forces Nursing Services eephaenaesa men and women will be appointed to the post just women.
Engineers, Signals and EME Corps
educational qualification
Bangladeshi by birth, secondary and higher GPA 3.5 or candidates must be passed in first division. The engineering corps of men and women in civil engineering from the University of the government (civil engineering) for a minimum CGPA of 3.00 or must be passed in first division. Signals Corps male candidates from any public university in Computer Science and Engineering and Electrical Electronics and Communication Engineering at least CGPA 3.00 in first class or will be obtained. As well as the Electrical and Mechanical Engineering (EME) corps of men and women candidates for appointment to any public university of aeronautical engineering, naval architecture and marine engineering, materials and metalarjikyala engineering, biomedical, Nuclear Science and Engineering, Industrial and Production Engineering or a CGPA of at least the first class 3.00 will be obtained.
Physical Requirements
For male candidates, five feet four inches tall, weighs 50 kg and normal breast size is 30 inches and 3 inches must be inflated condition.
Female candidates height of five feet, two inches, weight 47 kg and chest swell the size of normal 8-inch and 30-inch will be.
Candidates age on July 1, at 2017 years of age will be 28. Although only single women, married and unmarried men acceptable candidates can apply. However, on 1 July, at the age of 2017 married men are able to apply for more than 6 years.
For details, Kaler Kantha newspaper on November 1, 2016 by notification published on:
Eephaenaesa-Armed Forces Nursing Services
educational qualification
BSc nursing degree candidates are eligible to apply.
Physical Requirements
Candidates five feet two inches in height, weight 47 kg and chest swell the size of normal 8-inch and 30-inch will be.
Candidates must be born in Bangladesh. In addition, married, single, widowed or divorced women candidates can apply padatite.
For details, Kaler Kantha newspaper on November 1, 2016 by notification published on:
Application Process
Candidates interested in the application fee of Rs jamadanapurbaka Bangladesh Army website address (www.joinbangladesharmy.mil.bd) can apply. You can apply on 11 November, 31 December, from 2016, 2016 to date.

subset: commoncrawl


text:
With First Tutors: Music you can locate a Acton tuba tutor. Tuba tuition are the perfect way to start a fun new hobby, pick up a new talent and gain confidence in tuba. Try our service to search for Acton tuba tutors and determine which best suits your needs so you can enjoy your tuba tuition in Acton immediately!
First Tutors: Music is the best place to find Acton tuba tutors in the UK, helping you discover Acton tuba tuition in your area and Acton teachers to help with any instrument, for example, piano, violin or guitar. We can help you find Acton tuba lessons or a one-to-one Acton tuba teacher to prepare for tuba exams and improve your tuba skills! Our search will order Acton tuba tutors in your area according to their hourly prices and distance from you.
If you are a tuba teacher wishing to offer tuba tuition services in Acton or throughout the UK, please register with First Tutors: Music or find out more about us here. Becoming a Acton tuba teacher is a wonderful way to re-affirm your own knowledge by giving tuba lessons while assisting someone else, all in the Acton area!


text:
WITH six weeks to go for the transfer of power, pressures continued to mount. The Punjab government was unable to stop the outbreak of fires that engulfed large sections of Lahore and Amritsar although Nehru urged martial law and Jinnah told Mountbatten that he did not mind if Muslims were shot. The bulk of the army was paralysed as instructions went out to divide units on communal lines. Before the week ended, Mountbatten suffered his biggest personal reverse at the hands of Jinnah. And as referendum neared in the Northwest Frontier Province (NWFP), the Afghan government supported Pakhtun independence and claimed the territory.
The main task facing the British government was to finalise the historic bill designed to end British rule in India. Never had such an important measure been pushed through so fast. Telegrams flew between London and New Delhi. The Labour government was anxious that the bill be passed by both Houses of the British Parliament and receive royal assent by July 18—just under a month before the actual transfer of power. It was an elaborate piece of legislation. But the core was contained in a brief paragraph that brought tears to many British eyes. The resonant words Emperor of India were to be omitted "from the Royal Style and Tiles" of the monarch. For a century, India had been the Jewel in the Crown, the heart of a global empire on which the sun never set. The bill marked the end of an era.
Designated the India Independence Bill, it provided for setting up two independent Dominions of India and Pakistan out of British India. It described their territories and provided for the division of Punjab and Bengal. The British government, it stated, would not be responsible for the governance of these territories after August 15. But a link remained; each Dominion would have a governor-general who, the bill stated, "shall be appointed by His Majesty and shall represent His Majesty for the purposes of government of the Dominion".
For the princely states, the bill spelt the collapse of the umbrella of British paramountcy under which they had been sheltered so long. After its adoption, "the suzerainty of His Majesty over the Indian states lapses, and with it, all treaties and agreements in force". Paramountcy would not be inherited by the Dominion governments, who would have to work out their own relations with the princely states. This would concern India more than Pakistan since most of them fell within, or abutted, Indian territory.
Mountbatten invited Nehru, Patel, Jinnah and Liaquat Ali to the Viceroy's House on July 1 to read the draft bill. He said that since it was contrary to parliamentary practice to show advance texts, they could examine the draft for two hours, but not take it away. The Congress and League leaders would sit in separate rooms and could bring advisors. Nehru, however, insisted that the measure was too important to be treated so casually. His colleagues would also have to see it. Mountbatten had to telegraph Attlee who agreed that Nehru be allowed to take a copy out, on condition that secrecy was maintained.
In Britain Conservative MPs objected to the Dominion of India retaining the name 'India'; they wanted it to be 'Hin-dustan'. They objected even more strongly to the title 'India Independence Bill'. Churchill was so upset that he wrote to Attlee from his sickbed on July 1: "The essence of the Mountbatten proposals and the only reason that I gave support to them is because they establish the phase of Dominion status. Dominion status is not the same as independence.... It is not true that a community is independent when its ministers have in fact taken the Oath of Allegiance to the King." He suggested 'The India Dominions Bill' as title, but the prime minister said it was too late.
In New Delhi, Mountbatten reported to London that Jinnah reacted favourably to the bill. But Congress leaders were unhappy with the clause eliminating all treaties and agreements with the princely states. They pointed out that as a result arrangements for transport, railways, customs, irrigation and other transit facilities through princely states would lose their legal basis. They wanted a provision for standstill agreements to be made in the bill to overcome this deficiency.
A proposal accepted by Mountbatten on June 25 helped. He agreed to set up a States Department in the interim government to liaise with the princely states and negotiate standstill agreements. This was a function hitherto entrusted to the Political Department, headed by Sir Conrad Corfield, who had been using his influence to prevent the larger princely states from joining India. Equally significant was the announcement that the strong man of the Congress, Sardar Patel, who was Home Member, would look after the new department. When Patel persuaded V.P. Menon to leave the Viceroy's staff and become secretary, the team looked formidable. "I am glad to say that Nehru has not been put in charge of the new States Department," Mountbatten commented, "which would have wrecked everything. Patel, who is essentially a realist and very sensible, is going to take it over.... Even better news is that V.P. Menon is to be the secretary. By this means, I think we shall avoid a really bad break with the States with all the endless repercussions that this would have entailed."
While the constitutional problems involved in the transfer of power were being addressed, fires raged uncontrolled in Lahore and Amritsar. Mountbatten reported to London on June 27: "If we cannot stop this arson both these cities will soon be burnt to the ground." Nehru and Jinnah had asked him to impose martial law, but the local authorities felt it would not help. According to the Punjab governor, Sir Evan Jenkins, troops would not be able to prevent the "cloak and dagger operations" responsible for setting fires.
Tempers ran high. At the meeting of his Cabinet, the Viceroy continued: "Nehru, as usual, completely lost control of himself and demanded the sacking of every official, from the Governor downward, the same day. I had to reprimand him publicly... Patel then ranted against the British saying that in the days when they were putting down Congress and freedom movements, they had no difficulty in keeping law and order."
IN any event, the army was dislocated by division. On the same date, procedures were authorised for dividing the army on a communal basis. Units were to be moved from and to Pakistan depending on their religious composition. Stores were to be divided and separate administrative headquarters created. The commander-in-chief estimated that the process of reorganisation would take at least two or three years.
The British chiefs of staff were not too unhappy about this. They were hopeful that India and Pakistan would have to seek retention of British troops during the interim and this would further their strategic objectives. But their effort to retain the Andamans and Nicobar Islands proved infructuous. The British government accepted Mountbatten's view that no special provision should be made in the Independence Bill that would separate them.
But Mountbatten was less successful with Jinnah. Since the talks on partition began, the Viceroy had assumed that he would be invited to be governor-general of both Dominions. He argued that this would help tide over the impact of separation. The Congress formally invited him to stay on. But the Muslim League leader was evasive.
Then, on July 2, Jinnah said he wanted to be governor-general of Pakistan himself. Mountbatten's frustration was reflected in his personal report to London. He wrote: "He (Jinnah) is suffering from megalomania in its worst form, for when I pointed out to him that if he went as a constitutional governor-general his powers would be restricted but as prime minister he could really run Pakistan, he made no bones about the fact that his prime minister would do as he said: 'In my position, it is I who will give the advice and others who will act on it'." One of the Viceroy's arguments was that a common governor-general would help ensure that Pakistan would get its due share of the common assets. When asked if he rea-lised what his decision could cost, Jinnah replied, "It may cost me several crores of rupees." Mountbatten responded: "It may well cost you the whole of your assets and the future of Pakistan." But Jinnah was obdurate.
The approach of a referendum in NWFP enabled Afghanistan to revive old claims to the border area. The Afghan minister in London handed over a note stating that Britain had annexed the area during the Anglo-Afghan wars. More seriously, the note went on: "In view moreover of the change in the status of India, the obligations created by the Anglo-Afghan treaties in respect of these territories will in future no longer be regarded as binding." The Afghan government rejected the NWFP referendum as unjust "as it debars the province from choosing either to form a separate free State or to rejoin its motherland Afghanistan".
On June 30, the British lion roared for the last time over the Khyber Pass. "Neither the present government nor its successors can afford to surrender any vital interest or right," London replied. "It is to be hoped that the Afghan government will be persuaded that, in being firm, we are not being unfriendly and that, at this juncture in her history, India is more entitled to expect Afghan goodwill than Afghan intervention in her internal affairs." Badshah Khan's Red Shirts (Khudai Khidmatgars) had decided not to participate in the NWFP referendum because the option of voting for their own constituent assembly, which would decide whether to join India or Pakistan, had not been conceded. Badshah Khan feared that a direct vote between the two Dominions would inevitably become communal. His demand was interpreted by British officials as favouring independence or Afghanistan, though Gandhi was sure that his friend had no such intention. In the event, the Red Shirt withdrawal from the referendum ensured that the NWFP would go to Pakistan.


text:
1. Butler's Café
Location: Shibuya
Maid Cafes are taking over Japan by storm, but what about a Butler café? The first observation you will make upon entering this café, is that it's service staff is made up foreign men from Western countries who will speak to you entirely in English and call you 'princess'. The whole reason being that this café was founded for Japanese women to practise their English. Staying true to their character, they serve customers with the professionalism and efficiency as a real butler would (complete with ringing of a bell, should you require service). The price to pay for such service is of course steep, with prices from 850 to 2200 Yen, but the food served is tasty and it's one of those experiences you'd only find in Japan.
2. Planetarium STARRY Café
Location: Haneda Airport Tokyo
With beautiful 360 degree projection of constellations, the Planetarium STARRY Café is sure to leave you amazed. Have your coffee under the stars but sheltered from the elements. By request, the screens above are also able to project educational videos, or short animations. The planetarium screens different shows throughout the week so every visit will be a new experience. This café serves a hodgepodge of food from snacks such as popcorn, hotdogs to salad, pasta and they even have a bar which opens after 5.30pm. This is a top dating spot for the locals with its intimate and romantic setting in a city where its street lights tend to outshine the natural stars.
3. Calbee Plus Café
Location: Harajuku
Calbee is one of Japan's most reknowned snack makers, more importantly for their crisps and chips. The Calbee Plus Café allows patrons to enjoy a variety of Calbee snacks which are not available on supermarket shelves, such as chocolate covered Calbee crisps. Those who are fans of the calbee snacks, can get them made fresh on the spot. While queuing up for your bowl of piping hot potato crisps, you can watch the makers in their craft as they peel, fry and dry the potato slices. Whether it be salty or sweet, Calbee Plus Café has it on its menu and it's definitely an experience for those looking to try a freshly made Japanese snack.
4. Ninja Akasaka
Location: Chiyoda
This ninja themed eatery is more of a restaurant than a café. However due to it's unique theme, we're including it in the list. As you enter the restaurant, you'll be lead through some tunnels and a bridges, by a ninja, before you are led to your private room. You're told to find the 'hidden' button to call for service when you've decided what to order. Halfway through your meal, the Master Ninja will pay a visit to your room and perform a couple of tricks which will definintely enthrall and intrigue you. However be warned that the food here isn't cheap and dinner usually comes in the form of set menus with about 7 courses. However, it is an interesting dining experience for both families and friends.
5. N3331 Café
Location: Chiyoda
Located on the platform between two railways, sits a quaint little café which serves light snacks and drinks. The N3331 Cafe might be in a rather small and intimate setting, but it is great for people watching with it's ceiling to window glass providing a 360 view of the trains and its passengers flanking either sides. This café may not be for everyone, especially if you're not into the chugging and chooing of a train every now and then but it does provide a rather different experience. If you have an afternoon to spare and trains are your thing, this café would definitely pique your interest. This café is willing to rent it out it's space and host wedding parties too, perfect for the train enthusiasts.
6. Sakuragaoka Café
Location: Shibuya
When someone tells you to visit the 'Goat café' in Tokyo, they aren't referring to the name of the café but instead the pair of goats which reside outside. Sakuragoaka Café should be visited not just for of its unoffical mascots but the interior oozes a laid back chill vibe with eclectic furnishing. The café serves a variety of western food from pizza to pasta within a low price range of 500 to 1200 Yen. also has a western style bar which is opened until the early morning. This place is a great place to hang and chill out with friends over lunch or a drink and the two goats will definitely be a talking point.
Find more information on things to do in Tokyo, visit Travelog.
Images courtesy of (from top to bottom) Hir@gana Times, Pinterest, Tokyo Belly, Time Out Tokyo, Tokyoing, Texan in Tokyo.


text:
Dressing up as ghostly ghouls,
Acting silly or playing fools.
Floppy feet, a red clown nose,
Frankenstein--there he goes!
A cackling witch, a pointy hat,
Draculas cape shaped like a hat,
Draculas cape shaped like a bat.
Scariest monsters ever seen--
All come out for Halloween!
If you are the copyright holder of this poem and it was submitted by one of our users without your consent, please contact us here and we will be happy to remove it.


text:
|98 Min
|Family . Drama . Comedy
The Baker brood moves to Chicago after patriarch Tom gets a job coaching football at Northwestern University, forcing his writer wife, Mary, and the couple's 12 children to make a major adjustment. The transition works well until work demands pull the parents away from home, leaving the kids bored -- and increasingly mischievous.
|Morgan York , Liliana Mumy , Jacob Smith , Alyson Stoner , Kevin G. Schmidt , Hilary Duff , Tom Welling , Piper Perabo , Bonnie Hunt , Steve Martin
|Shawn Levy
|More Info:
Lighthearted fun.Chicago Sun-Times Full Review
It's not just a feel-good holiday movie, though audiences, especially youngsters, will certainly walk out of it feeling good.San Francisco Chronicle Full Review
Cheaper entertains a broad audience by recalling an age of family filmmaking when that term wasnt synonymous with crap.Premiere Full Review
Equal parts fantasy and cautionary tale, a film that manages to be uplifting and off-putting simultaneously -- fortunately, more the former than the latter.Baltimore Sun Full Review
Martin and Hunt are exactly the right lively but not sticky authority figures to keep the house (and the comedy pace) bouncing.Entertainment Weekly Full Review
Isn't without charm, or laughs. Director Shawn Levy's film features some of the best child actor casting since "The Little Rascals."Chicago Tribune Full Review
Solidifying his funnyman rep, Ashton Kutcher appears as oldest child Piper Perabo's model-actor boyfriend, a delightfully brainless narcissist.Village Voice Full Review
Be forewarned: this comedy bears only the faintest resemblance to the classic book and film of the same name.Chicago Reader Full Review
Thanks to Martin and Hunt, who both have a seemingly casual flair for mining laughs from even the most generic lines of dialogue, Cheaper by the Dozen works better than it might have in less capable hands, but even they're challenged by some of the picture's forced mood swings.The Hollywood Reporter Full Review
Soft, sentimental, and as unlike real family life as you can get.Christian Science Monitor Full Review
If only director Shawn Levy and the screenwriters had gone for cute and interesting instead of dull and cloyingly sentimental.Miami Herald Full Review
Much as I adore Martin and Hunt, whose matching tongue-in-cheek delivery and finite patience make them seem more like siblings than spouses, their movie is indistinguishable from an Afterschool Special.Philadelphia Inquirer Full Review
Makes one long for Martin's edgy work in films such as "The Spanish Prisoner."USA Today Full Review
Martin puts a thankless gloss on the antic role he played in "Parenthood." As his wife, Hunt is the movie's saving grace.Boston Globe Full Review
Much of the film feels like watching "Home Alone" and "Mr. Mom" on 12 different TVs at once.The A.V. Club Full Review
As synthetic as a plastic Christmas tree.Los Angeles Times Full Review
An unobjectionable if uninspired updating of a classic family story for the minivan generation.Washington Post Full Review
This is a movie that knows its audience and realizes it doesn't need much of a story to hit that audience, literally, where it lives.Washington Post Full Review
Resembles nothing more than an overstuffed, undernourished "Brady Bunch" episode, only not as funny.Seattle Post-Intelligencer Full Review
Generally amusing -- if occasionally overly sentimental.TV Guide Full Review
The film works best when it taps into the chaos generated by the kids, and there are a number of suitably anarchic Home Alone-style set-pieces.Empire Full Review
Nobody here, especially Martin, looks as if he's having much fun, apart from a dizzy cameo by Ashton Kutcher as oldest daughter Piper Perabo's model-actor beau, riffing heavy-handedly on his pretty-boy image, and loving it.L.A. Weekly Full Review
Unfortunately knows no tone between schmaltzy/gooey and slapstick/gross-out. Pic is as far from the original pic and its autobiographical memoir source as it can be while retaining the same title.Variety Full Review
There is not a frame of "Cheaper" that doesn't feel contrived. It fails the most fundamental test of movie logic.New York Daily News Full Review
Can be summed up by the fact that Ashton Kutcher, making a glorified cameo as a narcissistic model-slash-actor, is the best thing in it.New York Post Full Review
Everyone learns a lesson by movies end: Dont put work before family. Curiously, no one learns that all this could have been avoided with a good method of birth control.Austin Chronicle Full Review
Nothing happens. At all. Ever. Remember when Steve Martin was funny? Apparently, neither does he.Dallas Observer Full Review
A bubbling crockpot of farcical mush to warm the tummies of anyone who really and truly misses "The Brady Bunch," and I mean really and truly.The New York Times Full Review
The same studio has aimed a remake at the same family market. Translation: The once-modest piece has been redesigned as a vehicle (a lumbering SUV) for Steve Martin, stripped of any vestigial charm, and then thrown into neutral, where its manic engine does nothing but roar loudly and pointlessly for the duration.The Globe and Mail (Toronto) Full Review
Something of a shambles -- a shambles about a shambles -- but bound for big success and deservedly so.Wall Street Journal Full Review
|1 year
|2 years
|2 years
|2 years
|Show More


text:
Clean Water, Clean Yards, Clean Shoes!
Pet waste is a significant source of nutrients and fecal coliform bacteria entering Sarasota Bay. Dog poop does not stay on the grass but gets washed down the stormdrains and delivered untreated to the closest waterway during rain events. It is estimated that more than 26 tons (52,000 pounds) of pet waste is deposited every day in Sarasota and Manatee County.
To address pet waste pollution the Sarasota Bay Estuary Program has teamed up with its sister program, the Tampa Bay Estuary Program to bring the successful Pooches for the Planet pet waste pollution education program to the Sarasota Bay watershed.
- Download the PDF
- Join Pooches for the Planet on Facebook by clicking here.
- Get free Pooches for the Planet door hangers and rack cards (in English & Spanish) for your neighborhood distribution by contacting firstname.lastname@example.com or call (941) 981-9253. Logos, fact sheets, links and articles for community newsletters to share are also available.
- To watch a video about how pet waste pollutes our waterways visit www.stormwater.ucf.edu/research/petwaste
Fast Facts About Pet Waste
- An average-size dog dropping produces 3 billion fecal coliform bacteria.
- Research has shown that up to 95 percent of the fecal coliform found in urban stormwater comes from animals.
- Observations of people walking their pets in public areas show that men are less likely to pick up after their pets than women.
- A new national survey says that 38 percent of dog owners don't clean up after their pets.
Five Reasons People DON'T Pick Up After Their Pets
- Because it eventually goes away.
- Just because it's inconvenient.
- I don't have a bag.
- Dog goes on the edge of my property where I don't walk.
- It's in my yard where it doesn't bother anyone.
Five Reasons People Pick Up After Their Pets
- It's the law and I don't want to be fined.
- Environmental reasons.
- Hygiene and health reasons.
- Neighborhood courtesy.
- It's just the right thing to do.
- Four out of ten U.S. households have a dog
- American's 72 million dogs produce about 40,000 tons of pet waste every day according to the American Veterinary Medical Association.
Thank You to the sponsors of our Pooches for the Planet adoption kits!


text:
Submit News
Iran Test Fires Naval Cruise Missiles During Military Exercises
Shane McGlaun
January 3, 2012 10:40 AM
Recipient E-mail
Sender E-mail
Surface-to-sea missile could target U.S. ships in the Gulf
Iran is one of the nations of the Middle East that much of the world watches closely. The country has a history of threats on those in its region and has been working to build its military might including a uranium enrichment program that has led to sanctions by the U.S. and other countries.
Iran has now announced that it has tested a new naval cruise missile in the Strait of Hormuz. The missile test was conducted during the final day of a 10-day military maneuver. The missile is called the Qader and it is a surface-to-sea weapon designed to destroy enemy ships. Iranian Admiral Mahmoud Mousavi said that the missile struck the intended target with precision and destroyed the target.
[Source: Vancouver Sun]
Iran offered the first glimpse of the missile in August of last year reports the
. The weapon is said to have a range of 125 miles, which would allow Iran to target some of the U.S. ships that are operating in the Gulf region. While some officials in the Iranian government have in the past threatened to disrupt shipping through the Strait of Hormuz, Mousavi has denied that the exercises have anything to do with such a blockage. The narrow Strait is a vital shipping lane for oil.
Admiral Mousavi said, "We won't disrupt traffic through the Strait of Hormuz. We are not after this."
The firing of the Qader missile isn't the only weapons test that occurred during the exercises. The Iranian Navy also tested a short-range surface-to-air missile called Mehrab. The Iranian state news agency IRNA quotes Admiral Habibollah Sayari of the Iranian Navy saying, "[These military exercises promote] peace and friendship for all countries in the region." He also said that the exercises send a message that foreigners had no room in the region reports the
Iran also recently claimed to
have forced a U.S. drone
to land where it wanted using a GPS hack.
"This is about the Internet. Everything on the Internet is encrypted. This is not a BlackBerry-only issue. If they can't deal with the Internet, they should shut it off." -- RIM co-CEO Michael Lazaridis
Related Articles
Iran: Yes, We Hacked the U.S.'s Drone, and Here's How We Did It
December 15, 2011, 7:00 PM
Latest Headlines
PIQ ROBOTTM reveals its new artificial intelligence software
November 29, 2016, 12:59 AM
One more time - Happy Thanksgiving to Everyone Around the World
November 24, 2016, 4:00 AM
Google's Smart Contact Lens Project gets halted for 2016
November 20, 2016, 7:00 AM
Cell Research Study shows African Americans have greater immune response to infection
November 10, 2016, 1:00 AM
UTHealth Clinical Trial Shows Progress Using Stem Cells to Treat Traumatic Brain Injury
November 8, 2016, 1:00 AM
Uber Partners with Circulation to Pilot Program Connecting Transportation and Digital Health Care
November 6, 2016, 5:00 AM
More Headlines
Most Popular Articles
Samsung 2017 QLED TV – Guaranteed no Burn-In Display
August 18, 2017, 6:55 AM
Two great updates from Google
August 20, 2017, 6:42 AM
Best Buy Student Discount on the HP Spectre x360
August 17, 2017, 6:00 AM
Shonin – Palm-sized cam that attaches to the body to record videos and store them to the cloud.
August 17, 2017, 6:00 AM
Asus Zenfone 4 Pro – Craftsmanship and Technical Brilliance in the palm of your hand.
August 16, 2017, 6:53 AM
Latest Blog Posts
Samsung has a Smart Speaker in the Works
Nenfort Golit
Aug 24, 2017, 6:00 AM
Own a Sony Xperia? – Not as waterproof as they say.
Elroy Bethell
Aug 23, 2017, 6:56 AM
Do you want to know who's driving in your neighborhood?
DailyTech Staff
Aug 22, 2017, 6:04 AM
US Navy ship collides with oil tanker off Singapore
DailyTech Staff
Aug 21, 2017, 6:25 AM
Japan launches satellite for better GPS system
DailyTech Staff
Aug 20, 2017, 6:52 AM
Apple Watch 3 gone to final testing Phase:
DailyTech Staff
Aug 19, 2017, 6:24 AM
Can Didi out-network Uber to win the global ridesharing market?
DailyTech Staff
Aug 18, 2017, 6:23 AM
HBO social media hacked in latest cyber security breach
DailyTech Staff
Aug 17, 2017, 6:49 AM
Android O – Arrives in August 21, 2017
Elroy Bethell
Aug 17, 2017, 6:43 AM
Smart Biochip that helps to repair injuries and restore health.
Elroy Bethell
Aug 16, 2017, 7:10 AM
Samsung Galaxy Note 8 - One of the Biggest Smartphones so far by Samsung
DailyTech Staff
Aug 15, 2017, 6:23 AM
Google Voice Typing Update
Nenfort Golit
Aug 15, 2017, 6:00 AM
Google looks at health issues with purchase of Senosis
Elroy Bethell
Aug 14, 2017, 7:06 AM
Alzheimer's patients make soon find relief by playing video games.
Elroy Bethell
Aug 13, 2017, 6:35 AM
New LG V30 arrives in two weeks.
Elroy Bethell
Aug 12, 2017, 6:57 AM
Ready for an even larger iPhone?
Elroy Bethell
Aug 11, 2017, 6:35 AM
Google fires engineer for violating company's code of conduct.
Elroy Bethell
Aug 10, 2017, 6:50 AM
T-Mobile new android smartphone.
Nenfort Golit
Aug 10, 2017, 6:00 AM
Want to take the Perfect Selfie? Try this Selfie App.
Elroy Bethell
Aug 9, 2017, 6:45 AM
New Fitbit Smartwatch coming this fall.
DailyTech Staff
Aug 8, 2017, 6:00 AM
More Blog Posts
Copyright 2017 DailyTech LLC. -
RSS Feed
About Us
Terms, Conditions & Privacy Information
Kristopher Kubicki


text:
don caseto_pyci
- by pale_ecostore
- 38
- 38m
- 5 years ago
Curumin, Tensei, Oddisee, 5Y5, Flight Facilities and more.
palé mixtape#63
Don Caseto en:
Plata y Circuitos Integrados
Press play to try again.
Please update your browser or install another such as Google Chrome.
Mixcloud requires HTML5 audio with MP3 and MP4 support.


text:
- Alerts and reports for idling and speed violations
- Fuel card reports that track fuel transactions and identify unauthorized fuel purchases
- Fuel usage reports for detailed purchase and MPG monitoring
- Routing capabilities to dispatch drivers more efficiently and reduce overall driving distances
- Diagnostic tools to help keep engines in optimal condition and increase fuel performance
With fuel prices spiking upward, fleet managers are rightly concerned about this major budget line item. A new ePaper from Networkfleet, Inc. titled " Don't Sit Idle While Fuel Costs Rise" provides details on how fleet management technology can hedge against rising fuel costs. Using GPS fleet tracking and engine diagnostic monitoring, fleet managers can implement more efficient routing, reduce speeding and reign in excessive idling, which can permanently lower fuel costs by as much as 20 percent. Included in the Networkfleet ePaper are specific actions fleet managers can take to analyze fleet operations and reduce costs. Those that have implemented online fleet management systems report a quick ROI, due primarily to significant savings in fuel and other operating costs. Fuel-saving features enabled by Web-based fleet management include:


text:
|Publication number
|Publication type
|Application number
|Publication date
|Mar 7, 2000
|Filing date
|Feb 18, 1997
|Priority date
|Sep 24, 1996
|Fee status
|Publication number
|Vlasta Brusic Kaufman, Shumin Wang
|Original Assignee
|Cabot Corporation
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (32), Referenced by (50), Classifications (5), Legal Events (6)
|External Links: USPTO, USPTO Assignment, Espacenet
This is a Continuation-In-Part of U.S. patent application Ser. No. 08/718,937 filed on Sep. 24, 1996.
1. Field of the Invention
This invention concerns a chemical mechanical polishing slurry including at least two oxidizers, one of which is urea hydrogen peroxide. The chemical mechanical polishing slurry is useful for polishing metal layers and thin-films associated with semiconductor manufacturing. More particularly this invention concerns a chemical mechanical polishing slurry that is especially adapted for polishing multiple metal layers and thin-films where one of the layers or films is comprised of aluminum or an aluminum containing alloy and another layer or thin film is comprised of titanium or a titanium containing alloys or compounds such as titanium nitride.
2. Description of the Art
Integrated circuits are made up of millions of active devices formed in or on a silicon substrate. The active devices, which are initially isolated from one another, are interconnected to form functional circuits and components. The devices are interconnected through the use of well-known multilevel interconnections. Interconnection structures normally have a first layer of metallization, an interconnection layer, a second level of metallization, and sometimes a third and subsequent level of metallization. Interlevel dielectrics such as doped and undoped silicon dioxide (SiO2), are used to electrically isolate the different levels of metallization in a silicon substrate or well. The electrical connections between different interconnection levels are made through the use of metallized vias. U.S. Pat. No. 4,789,648, which is incorporated herein by reference, describes a method for preparing multiple metallized layers and metallized vias in insulator films. In a similar manner, metal contacts are used to form electrical connections between interconnection levels and devices formed in a well. The metal vias and contacts may be filled with various metals and alloys including titanium (Ti), titanium nitride (TiN), tantalum (Ta), aluminum copper (Al-Cu), aluminum silicon (Al-Si), copper (Cu), tungsten (W), and combinations thereof. The metal vias and contacts generally employ an adhesion layer such as titanium nitride (TiN) and/or titanium (Ti) to adhere the metal layer to the SiO2 substrate. At the contact level, the adhesion layer acts as a diffusion barrier to prevent the filled metal and SiO2 from reacting.
In one semiconductor manufacturing process, metallized vias or contacts are formed by a blanket metal deposition followed by a chemical mechanical polish (CMP) step. In a typical process, via holes are etched through an interlevel dielectric (ILD) to interconnection lines or to a semiconductor substrate. Next, a thin adhesion layer such as titanium nitride and/or titanium is generally formed over the ILD and is directed into the etched via hole. Then, a metal film is blanket deposited over the adhesion layer and into the via hole. Deposition is continued until the via hole is filled with the blanket deposited metal. Finally, the excess metal is removed by chemical mechanical polishing, (CMP) to form metal vias. Processes for manufacturing and/or CMP of vias are disclosed in U.S. Pat. Nos. 4,671,851, 4,910,155 and 4,944,836.
In a typical chemical mechanical polishing process, the substrate is placed in direct contact with a rotating polishing pad. A carrier applies pressure against the backside of the substrate. During the polishing process, the pad and table are rotated while a downward force is maintained against the substrate back. An abrasive and chemically reactive solution, commonly referred to as a "slurry" is applied to the pad during polishing. The slurry initiates the polishing process by chemically reacting with the film being polished. The polishing process is facilitated by the rotational movement of the pad relative to the substrate as slurry is provided to the wafer/pad interface. Polishing is continued in this manner until the desired film on the insulator is removed. The slurry composition is an important factor in the CMP step. Depending on the choice of the oxidizing agent, the abrasive, and other useful additives, the polishing slurry can be tailored to provide effective polishing to metal layers at desired polishing rates while minimizing surface imperfections, defects and corrosion and erosion. Furthermore, the polishing slurry may be used to provide controlled polishing selectivities to other thin-film materials used in current integrated circuit technology such as titanium, titanium nitride and the like.
Typically CMP polishing slurries contain an abrasive material, such as silica or alumina, suspended in an oxidizing, aqueous medium. For example, U.S. Pat. No. 5,244,523 to Yu et al. reports a slurry containing alumina, hydrogen peroxide, and either potassium or ammonium hydroxide that is useful to remove tungsten at predictable rates with little removal of the underlying insulating layer. U.S. Pat. No. 5,209,816 to Yu et al. discloses a slurry comprising perchloric acid, hydrogen peroxide and a solid abrasive material in an aqueous medium that is useful for polishing aluminum. U.S. Pat. No. 5,340,370 to Cadien and Feller discloses a tungsten polishing slurry comprising approximately 0.1M potassium ferricyanide, approximately 5 weight percent silica and potassium acetate. Acetic acid is added to buffer the pH at approximately 3.5.
U.S. Pat. No. 4,789,648 to Beyer et al. discloses a slurry formulation using alumina abrasives in conjunction with sulfuric, nitric, and acetic acids and deionized water. U.S. Pat. Nos. 5,391,258 and 5,476,606 disclose slurries for polishing a composite of metal and silica which includes an aqueous medium, abrasive particles and an anion which controls the rate of silica removal. Other polishing slurries for use in CMP applications are described in U.S. Pat. No. 5,527,423 to Neville et al., U.S. Pat. No. 5,354,490 to Yu et al., U.S. Pat. No. 5,340,370 to Cadien et al., U.S. Pat. No. 5,209,816 to Yu et al., U.S. Pat. No. 5,157,876 to Medellin, U.S. Pat. No. 5,137,544 to Medellin, and U.S. Pat. No. 4,956,313 to Cote et al.
It has been recognized that CMP slurries that are used to polish multiple metal layers in a single step typically exhibit a low polishing rate towards at least one of the metal layers. As a result, the polishing step is lengthened or operated at aggressive polishing conditions that can cause undesirable erosion of the SiO2 layer and recessing of the metal vias and/or metal lines. Such recessing causes a non-planar via layer or metal line layer to be formed which impairs the ability to print high resolution lines during subsequent photolithography steps and can cause the formation of voids or open circuits in the formed metal interconnections. Additionally, recessing increases when over polishing is used to ensure complete removal of the titanium, titanium nitride, and aluminum films across the surface of a wafer. Thus, a need remains for CMP slurries which reliably polish a plurality of metal layers including a titanium layer in an integrated circuit. Accordingly, a new CMP polishing slurry that polishes titanium at a higher rate is needed to overcome the present substrate manufacturing reliability issues imposed by the current CMP polishing slurries.
The present invention is directed to a single chemical mechanical polishing slurry that includes urea hydrogen peroxide. In addition to acting as an oxidizer, the urea hydrogen peroxide is more stable than hydrogen peroxide alone and it help stabilize other slurry components such as additional oxidizers.
In addition, the chemical mechanical polishing slurry is able to polish aluminum alloy, titanium, and titanium nitride layers at acceptable rates and has a high insulator polishing selectivity while exhibiting low polishing selectivities towards titanium, and titanium nitride.
Furthermore, this invention is directed to methods for using a single chemical mechanical polishing slurry to polish a plurality of metal layers in an integrated circuit.
In one embodiment, this invention is an aqueous chemical mechanical polishing slurry. The chemical mechanical polishing slurry comprises an abrasive, urea hydrogen peroxide, and a second oxidizer. In addition, the chemical mechanical polishing slurry may include at least one organic acid.
In another embodiment, this invention is an aqueous chemical mechanical polishing slurry. The chemical mechanical polishing slurry comprises alumina, from about 1.5 to about 30.0 weight percent urea hydrogen peroxide, from about 0.2 to about 10.0 weight percent second oxidizer, and from about 0.5 to about 5.0 weight percent succinic acid. Furthermore, the pH of the chemical mechanical polishing slurry ranges from about 2.0 to about 8.0.
In still another embodiment, this invention is a method for polishing a substrate. The method includes admixing an abrasive, from about 1.5 to about 30.0 weight percent urea hydrogen peroxide, from about 0.2 to about 10.0 weight percent of a second oxidizer, from about 0.5 to about 5.0 weight percent of at least one organic acid, and deionized water to give a chemical mechanical polishing slurry. Next, the chemical mechanical polishing slurry is applied to the substrate and at least a portion of a titanium layer, at least a portion of a titanium nitride adhesion layer and at least a portion of an aluminum alloy containing layer associated with the substrate are removed by bringing a pad into contact with the substrate and moving the pad in relation to the substrate.
The present invention relates to a chemical mechanical polishing slurry that comprises an abrasive and at least two oxidizers wherein one of the oxidizers is urea hydrogen peroxide. The chemical mechanical polishing slurry is used to polish at least one metal layer associated with a substrate selected from the group including integrated circuits, thin films, multiple level semiconductors, and wafers. In particular, the chemical mechanical polishing slurry of this invention has been found to exhibit excellent polishing selectivities when used to polish a substrate including titanium, titanium nitride, and aluminum alloy containing layers in a single step, multiple metal layer chemical mechanical polishing process.
Before describing the details of the various preferred embodiments of this invention, some of the terms that are used herein will be defined. The chemical mechanical polishing slurry, ("CMP slurry"), is a useful product of this invention that comprises at least two oxidizing agents, an abrasive, an organic acid, and other optional ingredients. The CMP slurry is useful for polishing a multiple level metallization which may include but are not limited to semi-conductor thin-films, integrated circuit thin-films, and for any other films and surfaces where CMP processes are useful. The terms "aluminum" and "aluminum containing alloys" are used interchangeably herein as it is within the understanding of one of skill in the art that in order to improve electromigration properties of aluminum, most "aluminum" containing metallization layers are actually comprised of an aluminum containing alloy, such as Al-Cu.
The oxidizing agents useful in the chemical mechanical polishing slurry are incorporated into a CMP slurry to aid in oxidizing the multiple metal layers to their corresponding oxide, hydroxide, or ions. For example, in the present invention, the oxidizing agents may be used to oxidize a metal layer to its corresponding oxide or hydroxide, e.g., titanium to titanium oxide, tungsten to tungsten oxide, copper to copper oxide, and aluminum to aluminum oxide. The oxidizing agents of this invention are useful when incorporated into a polishing slurry to polish metals and metal based components including titanium, titanium nitride, tantalum, copper, tungsten, aluminum, and aluminum alloys such as aluminum/copper alloys, and various mixtures and combinations thereof by mechanically polishing the metals to remove the respective oxide layer.
The CMP slurry of this invention includes at least two oxidizers. The first oxidizer is urea hydrogen peroxide. The urea hydrogen peroxide may be present in the overall chemical mechanical polishing slurry in an amount ranging from about 1.5 to about 30.0 weight percent. It is preferred that urea hydrogen peroxide is present in the slurry in an amount ranging from about 3.0 to about 17.0 weight percent and most preferably from about 5.0 to about 12.0 weight percent.
The CMP slurry of this invention includes a second oxidizer. The second oxidizer should be capable of polishing aluminum and aluminum containing alloy metal layers with good selectivities. Preferably, the second oxidizer is selected from dipersulfate and monopersulfate compounds and more preferably, is ammonium persulfate. The second oxidizer may be present in the chemical mechanical polishing slurry in an amount ranging from about 0.2 to about 10.0 weight percent. More preferably, the second oxidizer will be present in the chemical mechanical polishing slurry in an amount ranging from about 2.0 to about 8.0 weight percent with a range of from about 3.0 to about 5.0 being most preferred.
The CMP slurry of this invention includes an abrasive. The abrasive is typically a metal oxide abrasive. The metal oxide abrasive may be selected from the group including alumina, titania, zirconia, germania, silica, ceria and mixtures thereof. The CMP slurry of this invention preferably includes from about 1.0 to about 9.0 weight percent or more of an abrasive. It is more preferred, however, that the CMP slurry of this invention includes from about 3.0 to about 6.0 weight percent abrasive.
The metal oxide abrasive may be produced by any techniques known to those skilled in the art. Metal oxide abrasives can be produced using any high temperature process such as sol-gel, hydrothermal or, plasma process, or by processes for manufacturing fumed or precipitated metal oxides. Preferably, the metal oxide is a fumed or precipitated abrasive and, more preferably it is a fumed abrasive such as fumed silica or fumed alumina. For example, the production of fumed metal oxides is a well-known process which involves the hydrolysis of suitable feedstock vapor (such as aluminum chloride for an alumina abrasive) in a flame of hydrogen and oxygen. Molten particles of roughly spherical shapes are formed in the combustion process, the diameters of which are varied through process parameters. These molten spheres of alumina or similar oxide, typically referred to as primary particles, fuse with one another by undergoing collisions at their contact points to form branched, three dimensional chain-like aggregates. The force necessary to break aggregates is considerable and often considered irreversible. During cooling and collecting, the aggregates undergo further collision that may result in some mechanical entanglement to form agglomerates. Agglomerates are thought to be loosely held together by van der Waals forces and can be reversed, i.e., de-agglomerated, by proper dispersion in a suitable media.
Precipitated abrasives may be manufactured by conventional techniques such as by coagulation of the desired particles from an aqueous medium under the influence of high salt concentrations, acids or other coagulants. The particles are filtered, washed, dried and separated from residues of other reaction products by conventional techniques known to those skilled in the art.
A preferred metal oxide will have a surface area, as calculated from the method of S. Brunauer, P. H. Emmet, and I. Teller, J. Am. Chemical Society, Volume 60, Page 309 (1938) and commonly referred to as BET, ranging from about 5 m2 /g to about 430 m2 /g and preferably from about 30 m2 /g to about 170 m2 /g. Due to stringent purity requirements in the IC industry the preferred metal oxide should be of a high purity. High purity means that the total impurity content, from sources such as raw material impurities and trace processing contaminants, is typically less than 1% and preferably less than 0.01% (i.e., 100 ppm).
In this preferred embodiment, the metal oxide abrasive consists of metal oxide aggregates having a size distribution less than about 1.0 micron, a mean aggregate diameter less than about 0.4 micron and a force sufficient to repel and overcome the van der Waals forces between abrasive aggregates themselves. Such metal oxide abrasive has been found to be effective in minimizing or avoiding scratching, pit marks, divots and other surface imperfections during polishing. The aggregate size distribution in the present invention may be determined utilizing known techniques such as transmission electron microscopy (TEM). The mean aggregate diameter refers to the average equivalent spherical diameter when using TEM image analysis, i.e., based on the cross-sectional area of the aggregate. By force is meant that either the surface potential or the hydration force of the metal oxide particles must be sufficient to repel and overcome the van der Waals attractive forces between the particles.
In another preferred embodiment, the metal oxide abrasive may consist of discrete, individual metal oxide particles having a primary particle diameter less than 0.4 micron (400 nm) and a surface area ranging from about 10 m2 /g to about 250 m2 /g.
Preferably, the metal oxide abrasive is incorporated into the aqueous medium of the polishing slurry as a concentrated aqueous dispersion of metal oxides, which aqueous dispersion of metal oxide abrasives typically ranges from about 3% to about 45% solids, and preferably between 10% and 20% solids. The aqueous dispersion of metal oxides may be produced utilizing conventional techniques, such as slowly adding the metal oxide abrasive to an appropriate media, for example, deionized water, to form a colloidal dispersion. The dispersion is typically completed by subjecting it to high shear mixing conditions known to those skilled in the art. The pH of the slurry may be adjusted away from the isoelectric point to maximize colloidal stability.
The CMP slurry of this invention may further include an organic acid. A wide range of conventional organic acids, salts of organic acids, and mixtures thereof are useful in the CMP slurry of the present invention to enhance the selectivity to oxide polishing rate, such as monofunctional acids, di-functional acids, hydroxyl/carboxylate acids, chelating, non-chelating acids, and their salts. Preferably, the organic acid is selected from the group of acetic acid, adipic acid, butyric acid, capric acid, caproic acid, caprylic acid, citric acid, glutaric acid, glycolic acid, formic acid, fumaric acid, lactic acid, lauric acid, malic acid, maleic acid, malonic acid, myristic acid, oxalic acid, palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid, succinic acid, tartaric acid, valeric acid and derivatives, including salts thereof.
The organic acid or salt should be present in the final CMP slurry, individually or in combination with other organic acids or salts, in an amount sufficient to enhance the oxide selectivity without detrimentally effecting the stability of the CMP slurry. As such, the organic acid is typically present in the slurry from about 0.05% to 15% by weight, and preferably in a range between 0.5% and 5.0% by weight. Examples of chemical mechanical polishing slurries including organic acids and salts thereof are disclosed in U.S. patent application Ser. No. 08/644,509 which is incorporated herein by reference. A preferred organic acid is succinic acid. Succinic acid has been found to promote passivation of aluminum and it also inhibits the removal of the dielectric layer.
Other well known polishing slurry additives may be incorporated into the chemical mechanical polishing slurry of this invention. One type of optional additives are inorganic acids and/or salts thereof which may be added to the polishing slurry to further improve or enhance the polishing rate of the barrier layers in the wafer, such as titanium and tantalum. Useful inorganic additives include sulfuric acid, phosphoric acid, nitric acid, ammonium salts, potassium salts, sodium salts or other cationic salts of sulfates and phosphates.
In order to promote stabilization of the polishing slurry including oxidizing agents against settling, flocculation and decomposition, a variety of optional additives, such as surfactants, stabilizers, or dispersing agents, can be used. If a surfactant is added to the CMP slurry, then it can be an anionic, cationic, nonionic, or amphoteric surfactant or a combination of two or more surfactants can be employed. Furthermore, it has been found that the addition of a surfactant may be useful to improve the within-wafer-non-uniformity (WIWNU) of the wafers, thereby improving the surface of the wafer and reducing wafer defects. Non-limiting examples of preferred stabilizers useful in the CMP slurry of this invention include but are not limited to phosphonic acids such as aminotri(methylenephosphonic) acid, 1-hydroxyethylidene-4-diphosphonic acid, hexamethylenediaminetetramethylene phosphonic acid, and diethylenetetramine pentamethylenephosphonic acid. One or more stabilizers may be present in the CMP slurry of this invention in an amount that is sufficient to produce measurable improvements in slurry stability. A phosphonic acid stabilizer will generally be present in the slurry in an amount ranging from about 100 ppm to about 5.0 weight percent. The addition of one or more phosphonic acids to the CMP slurry of this invention may also inhibit metallic corrosion.
In general, the amount of additive such as a surfactant that may be used in the present invention should be sufficient to achieve effective stearic stabilization of the slurry and will typically vary depending on the particular surfactant selected and the nature of the surface of the metal oxide abrasive. For example, if not enough of a selected surfactant is used, it will have little or no effect on stabilization. On the other hand, too much surfactant in the CMP slurry may result in undesirable foaming and/or flocculation in the slurry. As a result, stabilizers such as surfactants should generally be present in a range between about 0.001% and 10% by weight. Furthermore, the additive may be added directly to the slurry or treated onto the surface of the metal oxide abrasive utilizing known techniques. In either case, the amount of additive is adjusted to achieve the desired concentration in the polishing slurry.
It is desirable to maintain the pH of the CMP slurry of this invention within a range of from about 2.0 to about 8, and preferably between from about 3.5 to about 6 in order to facilitate control of the CMP process. Specifically, it has been observed that the metal surface film passivation capability of the CMP slurry of this invention is compromised at high pH's, e.g., greater than 8. Likewise, slurry handling problems and substrate polishing quality problems are encountered when the pH of the CMP slurry of this invention is too low, e.g., less than 2. The pH of the CMP slurry of this invention may be adjusted using any known acid, base, or amine. However, the use of an acid or base that contains no metal ions, such as ammonium hydroxide and amines, or nitric, phosphoric, sulfuric, or organic acids are preferred to avoid introducing undesirable metal components into the CMP slurry of this invention.
The chemical mechanical polishing slurry of this invention has been found to have a high titanium (Ti) polishing rate as well as a high polishing rates towards titanium nitride (TiN) an aluminum containing layer and especially towards an Al-Cu metal layer. In addition, the chemical mechanical polishing slurry exhibits desirable low polishing rates towards the dielectric insulating layer.
One important application for the chemical mechanical polishing slurry of this invention is as a chemical mechanical polish for thin layer films comprising titanium, aluminum and aluminum containing alloys such as Al-Cu. In such a polishing application, the single polishing slurry is effective to polish titanium, titanium nitride, and aluminum alloy containing layers. The CMP slurry of this invention preferably exhibit a Al-Cu to titanium [Al-Cu:Ti] polishing selectivity and a Al-Cu to TiN [Al-Cu:TiN] polishing selectivity of from about 2:1 to about 1:2 and preferably from about 1:1.25 to about 1.25:1. At the same time the CMP slurry of this invention exhibits a very low dielectric (SiO2) polishing rate and preferably an SiO2 polishing rate less than 40 A/min.
The CMP slurry may be produced using conventional techniques known to those skilled in the art. Typically, the oxidizing agent and any optional additives, are mixed into the aqueous medium, such as deionized or distilled water, at predetermined concentrations under low shear conditions until such components are completely dissolved in the medium. A concentrated dispersion of the metal oxide abrasive, such as fumed alumina, is added to the medium and diluted to the desired loading level of abrasive in the final CMP slurry.
The CMP slurries of the present invention may be supplied as one package system (oxidizing agents, abrasive, and additives in a stable aqueous medium). To avoid possible CMP slurry degradation, however, it is preferred that at least a two package system is used where the first package comprises the first oxidizer and the second package comprises the second oxidizer. The remaining components, the abrasive, the organic acid, and any optional additives may be placed in either the first container, the second container or in a third container. When the first oxidizer is urea hydrogen peroxide, however, both oxidizers in dry solid form may be placed in a first container while the remaining aqueous ingredients are placed in a second container.
The components in the first container or second container may be in dry form while the components in the corresponding container are in the form of an aqueous dispersion. For example, the first container may comprise the first oxidizer in aqueous form while the second container comprises an aqueous dispersion of the abrasive the second oxidizer and the organic acid. Alternately, the first container may comprise an aqueous dispersion of an abrasive and the first oxidizer while the second container may comprise the organic acid and the second oxidizer in aqueous form. Other two-container combinations of the ingredients of the CMP slurry of this invention are within the knowledge of one having ordinary skill in the art.
A multi-package CMP slurry system may be used with any standard polishing equipment appropriate for use on the desired metal layer of the wafer. The multi-package system includes one or more CMP slurry components in aqueous or dry form in two or more containers. The multi-package system is used by combining the components from the various containers in the desired amounts to give a CMP slurry comprising at least two oxidizing agents, an abrasive, and an organic acid in amounts described above.
The CMP slurry of the present invention does not significantly increase the silicon dioxide polishing rate above about 40 Å/min. However, the CMP slurry of this invention significantly increases the polishing rate of titanium or titanium nitride while maintaining a high polishing rate towards aluminum and aluminum containing alloys such as Al-Cu. Thus, the CMP slurry of this invention is effective in controlling polishing selectivities of titanium, titanium nitrite and Al-Cu. The polishing slurry of the present invention may be used during the various stages of semiconductor integrated circuit manufacture to provide effective polishing at desired polishing rates while minimizing surface imperfections and defects.
We have discovered that a CMP slurry including two oxidizers is capable of polishing a multiple metal layer comprising titanium, titanium nitride, and Al-Cu at high rates while exhibiting an acceptable low polishing rate towards the dielectric layer.
The following examples illustrate preferred embodiments of this invention as well as preferred methods for using compositions of this invention.
In this example, CMP polishing was accomplished using two CMP slurries including 4.0 weight percent ammonium persulfate, 3.0 weight percent succinic acid, 5.0 weight percent of a fumed alumina abrasive from SEMI-SPERSE� W-A355 dispersion sold by the Microelectronics Materials Division of Cabot Corporation, in Aurora, Ill., and either 0 or 3.0 weight percent hydrogen peroxide with the remainder of the slurry consisting of deionized water. The slurry was adjusted to a pH of 5.0 with ammonium hydroxide.
The CMP slurry was applied to Ti coated blanket wafers having a thickness of 2000 Å. The wafers were placed in an IPEC 472 tool manufactured by IPEC Planar. The wafers were subjected to 5 psi down force, a table speed of 45 rpm, and a spindle speed of 60 rpm. The CMP slurry was applied to a XMGH 1158 pad manufactured by Rodel, Inc. at a rate of 200 ml/min.
The titanium removal rate for the CMP slurry containing no hydrogen peroxide was 8.6 nm/min and the Al-Cu/titanium selectivity was above 23. The titanium removal rate for the CMP slurry containing 3.0 weight percent hydrogen peroxide was 200 nm/min and the titanium/Al-Cu selectivity was 1:1. In both tests the Al-Cu removal rate was about 200 nm/min.
This example studies the effect of varying solution pH on the aluminum polishing rates and Ti, TiN, and SiO2 selectivities of a CMP slurry of this invention. This example used a CMP slurry of this invention having the following composition; 4.0 weight percent ammonium persulfate; 3.0 weight percent succinic acid; 3.0 weight percent hydrogen peroxide; 5.0 weight percent alumina abrasive (W-A355) with the remainder being deionized water. The pH of the slurry was adjusted using ammonium hydroxide to give two slurries; the first with a pH of 3.5 and the second with a pH of 5.0.
The CMP slurry was applied to Al, Ti, TiN, and SiOx blanket coated wafers. The wafers were placed in a IPEC 472 tool and polished using a 5 psi down force, a table speed of 45 rpm, and a spindle speed of 60 rpm. The CMP slurry was applied to a XMGH1158 pad at a rate of 200 ml/min. Table 1, below summarizes the results of this example.
TABLE 1______________________________________ pH 3.5 pH 5.0______________________________________Al removal rate: 350 nm/min 600 nm/minAl WIWNU 7.6% 14%Sel. to Ti 1.72:1 1.61:1Sel. to TiN 1.79:1 3.9:1Sel. to SiO2 88:1 n/mDishing, 50 μm* 57 nm 40.5 nmDishing, 128 μm** 198 nm 164 nm pH 3.5 pH 5.0Erosion 65 nm 54 nm______________________________________ *the result is based on initial feature depth of 750 nm covered with 1.5 μm of AlCu. **the result is based on initial feature depth of 750 nm covered with 0.8 μm of AlCu.
The polishing results, set forth in Table 1, above, clearly show that the CMP slurry of this invention is useful over a wide pH range.
This example investigates the effect of the addition of phosphonic acids to a CMP slurry of this invention on titanium dissolution. A CMP slurry consisting of 4.0 weight percent ammonium persulfate, 3.0 weight percent succinic acid, 3.0 weight percent hydrogen peroxide, 5.0 weight percent alumina abrasive (WA-355), and deionized water was used in this example. The CMP slurry, with and without the addition of small amounts of aminotri(methylenephosphonic acid)) was introduced into an electrochemical cell, and the Ti dissolution rate of the freshly abraded surface was evaluated by electrochemical techniques five minutes after abrasion had ceased. The results, which show that the phosphonic acid inhibits Ti dissolution are set forth in Table 2 immediately below:
TABLE 2______________________________________ Ti Dissolution RateSlurry pH % Phosphonic Acid (Å/min)______________________________________3.5 0 3.45.0 0 6.05.0 0.1 3.05.0 0.5 1.35.0 1.0 1.08.05 0 688.05 1.0 3.4______________________________________
This Example compares the effectiveness of urea hydrogen peroxide and hydrogen peroxide as useful CMP oxidizers. Specifically, this Example compares the stability over time of the two oxidizers.
Four slurries having the following compositions were prepared in an aqueous medium (deionized water). Each slurry was prepared using SEMI-SPERSE� W-A355 alumina dispersion and diluted to 5 weight percent alumina with deionized water.
Slurry A: 5% alumina, 3% hydrogen peroxide [HP], 3% succinic acid, original pH=3.50.
Slurry B: 5% alumina, 8.5% urea-hydrogen peroxide [UHP] (which corresponds to about 3.0 weight percent aqueous H2 O2), 3% succinic acid, original pH=3.55.
Slurry C: 5% alumina, 3% hydrogen peroxide [HP], 4% ammonium persulfate, 3% succinic acid, original pH=4.00.
Slurry D: 5% alumina, 8.5% urea-hydrogen peroxide [UHP] (which corresponds to about 3.0 weight percent aqueous H2 O2), 4% ammonium persulfate, 3% succinic acid, original pH=4.00.
Slurries A and B were allowed to stand at room temperature, over a seven week period. Samples of slurry A and B were periodically analyzed for pH and titrated with acid to determine percentage of active peroxide. The results are reported in Table 3 below.
TABLE 3______________________________________Stability Study of Slurries A and B Active H2 O2 % pH Slurry A Slurry B Slurry A Slurry B HP UHP HP UHP______________________________________0 weeks 3.35 3.28 3.50 3.551 weeks 3.30 3.482 weeks 2.85 3.623 weeks 3.24 3.525 weeks 3.12 3.497 weeks 1.82 3.54Average -0.22 -0.03 0.006 -0.012change/week______________________________________
The test results indicate that the active peroxide in the slurry including hydrogen peroxide degrades at a much faster rate than the slurry including urea hydrogen peroxide. The pH stability of both slurries are similar.
The peroxide activity, the activity of the persulfate oxidizer, and the pH of slurries C and D were evaluated as above. The results of the stability evaluation of slurries C and D are reported in Table 4, below.
TABLE 4__________________________________________________________________________Stability Study of Slurries of C and DActive H2 O2 % Persulfate % pHSlurry C Slurry D Slurry C Slurry D Slurry C Slurry D__________________________________________________________________________ 0 days 3.10 3.21 4.27 4.11 4.00 4.00 1 days 3.13 4.09 3.74 2 days 3.08 3.73 3.61 3 days 2.96 3.21 3.15 3.89 3.26 3.90 4 days 2.90 3.14 2.69 4.16 2.84 3.86 5 days 3.15 4.18 3.86 6 days 3.09 4.06 3.81 7 days 3.06 4.02 3.7711 days 3.06 3.98 3.68Average -0.05 -0.01 -0.40 -0.01 -0.29 -0.03change/day__________________________________________________________________________
The stability data reported in Table 4 confirms that the activity of a slurry comprising urea hydrogen peroxide is more stable over time than a slurry containing hydrogen peroxide. Furthermore, the results reported in Table 4 also show that urea hydrogen peroxide stabilizes the second oxidizer and significantly inhibits its degradation over time. Thus, urea hydrogen peroxide acts as both an oxidizer and as a stabilizer in a CMP slurry including at least two oxidizers allowing slurries incorporating urea hydrogen peroxide to be prepared many days prior to use without loss of oxidizer activity.
The polishing performance of slurries C and D were evaluated according to the method set forth in Example 1 above. The polishing results are set forth in Table 5 below.
TABLE 5______________________________________Polishing Results of Slurry C and D Slurry C Slurry D______________________________________Al rate (average) 4922 5195TiN rate (average) >3724 >3767Sel. To TiN <1.32 <1.38Ti Rate (average) >2754 >2772Sel. To Ti <1.79 <1.87Oxide rate (average) 97 67Sel. To Oxide 50.9 77.5______________________________________
The polishing results show that both slurries are effective at polishing various metal layers. Furthermore, Slurry D, incorporating urea hydrogen peroxide exhibits a desirable higher selectivity towards the oxide layer than hydrogen peroxide containing Slurry C.
The results of these examples demonstrate that a CMP slurry including a first oxidizer and a second oxidizer is useful, over a wide range of pH's in polishing multiple layers of metallization in a single polishing step. The results also demonstrate that the addition of a stabilizer to a CMP slurry of this invention inhibits corrosion of a metal layer of a metal substrate.
While the present invention has been described by means of specific embodiments, it will be understood that modifications may be made without departing from the spirit of the invention. The scope of the invention is not to be considered as limited by the description of the invention set forth in the specification and examples, but rather as defined by the following claims.
|Cited Patent
|Filing date
|Publication date
|Mar 25, 1965
|Jan 3, 1967
|R O Hull & Company Inc
|Bright dip compositions for the treatment of steel
|Apr 29, 1965
|May 28, 1968
|Sprague Electric Co
|Method and reagent for surface polishing
|Aug 9, 1968
|Jun 6, 1972
|Allied Chem
|Dissolution of metal with acidified hydrogen peroxide solutions
|Oct 28, 1985
|Jun 9, 1987
|International Business Machines Corporation
|Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
|Oct 28, 1985
|Dec 6, 1988
|International Business Machines Corporation
|Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
|Aug 3, 1987
|Apr 4, 1989
|Rem Chemicals, Inc.
|Metal surface refinement using dense alumina-based media
|Oct 28, 1988
|Mar 20, 1990
|International Business Machines Corporation
|Wafer flood polishing
|Oct 28, 1985
|Jul 31, 1990
|International Business Machines Corporation
|Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
|Jul 3, 1989
|Sep 4, 1990
|Advanced Micro Devices, Inc.
|Method of planarization of topologies in integrated circuit structures
|Oct 11, 1988
|Sep 11, 1990
|International Business Machines Corporation
|Via-filling and planarization technique
|Jul 24, 1990
|Feb 12, 1991
|Micron Technology, Inc.
|Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
|Apr 10, 1990
|Aug 11, 1992
|Rockwell International Corporation
|Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
|Nov 4, 1991
|Oct 27, 1992
|Rockwell International Corporation
|Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
|Feb 13, 1991
|Dec 22, 1992
|Micron Technology, Inc.
|Method of performing a field implant subsequent to field oxide fabrication by utilizing selective tungsten deposition to produce encroachment-free isolation
|Jun 4, 1992
|May 11, 1993
|Micron Technology, Inc.
|Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
|Jan 24, 1992
|Sep 14, 1993
|Micron Technology, Inc.
|Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
|Sep 13, 1991
|Oct 26, 1993
|Colgate-Palmolive Company
|Abrasive tooth whitening dentifrice of improved stability
|Nov 3, 1993
|Aug 23, 1994
|Intel Corporation
|Slurries for chemical mechanical polishing
|Mar 29, 1993
|Oct 11, 1994
|Micron Technology, Inc.
|Slurries for chemical mechanically polishing copper containing metal layers
|Jun 15, 1993
|Feb 14, 1995
|Lsi Logic Corporation
|Methods of cleaning semiconductor substrates after polishing
|May 26, 1993
|Feb 21, 1995
|Rodel, Inc.
|Compositions and methods for polishing
|Jun 30, 1993
|Apr 18, 1995
|Intel Corporation
|Chemical mechanical polishing slurry delivery and mixing system
|Jun 27, 1994
|Dec 19, 1995
|Rodel, Inc.
|Compositions and methods for polishing
|Oct 6, 1994
|Jun 18, 1996
|Cabot Corporation
|Chemical mechanical polishing slurry for metal layers
|Jun 20, 1995
|Jul 30, 1996
|Micron Technology Inc.
|IC mechanical planarization process incorporating two slurry compositions for faster material removal times
|Oct 6, 1995
|Nov 19, 1996
|Fujimi Incorporated
|Polishing composition
|Oct 31, 1978
|May 8, 1980
|Hans Henig
|Pickling and/or chemical polishing of copper or its alloys - using aq. solns. contg. mineral acid, hydrogen peroxide, and aliphatic alcohol as stabiliser
|Title not available
|Title not available
|Title not available
|Title not available
|Oct 23, 1995
|May 30, 1996
|Advanced Micro Devices, Inc.
|Method of making a chemical-mechanical polishing slurry and the polishing slurry
|Citing Patent
|Filing date
|Publication date
|Feb 14, 2000
|Nov 13, 2001
|Cabot Microelectronics Corporation
|Method of polishing using multi-oxidizer slurry
|Feb 11, 2000
|Mar 12, 2002
|Fujimi Incorporated
|Polishing composition
|Jun 10, 1999
|Apr 30, 2002
|International Business Machines Corporation
|Hydrogen peroxide and acid etchant for a wet etch process
|Mar 18, 1998
|Aug 13, 2002
|Cabot Microelectronics Corporation
|Chemical mechanical polishing slurry useful for copper substrates
|Oct 19, 1999
|Jan 21, 2003
|Applied Materials, Inc.
|Elimination of pad glazing for Al CMP
|Jun 15, 2001
|Feb 25, 2003
|Rodel Holdings, Inc
|Composition and method for polishing semiconductors
|Nov 2, 1999
|Mar 4, 2003
|Alien Technology Corporation
|Methods and apparatuses for improved flow in performing fluidic self assembly
|Nov 3, 2000
|Apr 15, 2003
|Ekc Technology, Inc.
|Post clean treatment
|Apr 5, 2001
|May 27, 2003
|Rodel Holdings, Inc.
|CMP polishing composition for semiconductor devices containing organic polymer particles
|Jul 5, 2000
|Jul 15, 2003
|Cabot Microelectronics Corporation
|Polishing composition for metal CMP
|Apr 21, 2003
|Jul 27, 2004
|Cabot Microelectronics Corporation
|Polishing composition for metal CMP
|Apr 24, 2002
|Nov 16, 2004
|Kao Corporation
|Polishing composition
|Apr 4, 2002
|Feb 8, 2005
|Cabot Microelectronics Corporation
|Process for fabricating optical switches
|Jul 11, 2002
|Apr 26, 2005
|Cabot Microelectronics Corporation
|Global planarization method
|Sep 30, 2003
|Aug 16, 2005
|Cabot Microelectronics Corporation
|Method of forming a current controlling device
|Jul 25, 2002
|Nov 28, 2006
|Alien Technology Corporation
|Methods and apparatuses for assembling elements onto a substrate
|Jul 24, 2003
|Apr 17, 2007
|Kao Corporation
|Polishing composition
|Apr 4, 2002
|Jul 22, 2008
|Micron Technology, Inc.
|Fixed-abrasive chemical-mechanical planarization of titanium nitride
|Oct 28, 2004
|Apr 28, 2009
|Cabot Microelectronics Corporation
|CMP composition comprising surfactant
|Dec 15, 2006
|May 12, 2009
|Alien Technology Corporation
|Methods and apparatuses for fluidic self assembly
|Aug 3, 2005
|Aug 18, 2009
|Aptina Imaging Corporation
|Backside silicon wafer design reducing image artifacts from infrared radiation
|Jun 22, 2005
|Nov 10, 2009
|Alien Technology Corporation
|Assembly comprising functional block deposited therein
|Jul 12, 2006
|Feb 16, 2010
|Micron Technology, Inc.
|Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
|Mar 31, 2009
|Jun 7, 2011
|Kao Corporation
|Polishing fluid composition
|Jun 30, 2005
|Nov 22, 2011
|Cabot Microelectronics Corporation
|Use of CMP for aluminum mirror and solar cell fabrication
|May 23, 2012
|May 26, 2015
|Cabot Microelectronics Corporation
|Polishing composition for nickel-phosphorous-coated memory disks
|Apr 4, 2002
|Aug 8, 2002
|Micron Technology, Inc.
|Fixed-abrasive chemical-mechanical planarization of titanium nitride
|Jan 10, 2002
|Sep 12, 2002
|Cabot Microelectronics Corporation
|Ammonium oxalate-containing polishing system and method
|Jul 10, 2002
|Jul 24, 2003
|Cabot Microelectronics Corp.
|Microlens array fabrication using CMP
|Jul 11, 2002
|Aug 14, 2003
|Cabot Microelectronics Corporation
|Global planarization method
|Apr 4, 2002
|Oct 9, 2003
|Yu Chris C.
|Process for fabricating optical switches
|Apr 21, 2003
|Oct 30, 2003
|Cabot Microelectronics Corporation
|Polishing composition for metal CMP
|Jul 12, 2002
|Jan 15, 2004
|Cabot Microelectronics Corp.
|Methods for polishing fiber optic connectors
|Jun 5, 2001
|May 13, 2004
|Shigeo Fujii
|Polishing fluid composition
|Jul 24, 2003
|Jul 8, 2004
|Hiroaki Kitayama
|Polishing composition
|Mar 26, 2004
|Sep 30, 2004
|Cabot Microelectronics Corporation
|Dielectric-in-dielectric damascene process for manufacturing planar waveguides
|Aug 29, 2003
|Nov 25, 2004
|Ameen Joseph G.
|Multi-oxidizer-based slurry for nickel hard disk planarization
|Aug 29, 2003
|Mar 3, 2005
|Ameen Joseph G.
|Particle-free polishing fluid for nickel-based coating planarization
|Jan 6, 2004
|Jul 7, 2005
|Cabot Microelectronics Corp.
|Micromachining by chemical mechanical polishing
|Aug 30, 2005
|Jan 5, 2006
|Micron Technology, Inc.
|Fixed-abrasive chemical-mechanical planarization of titanium nitride
|Oct 28, 2004
|May 11, 2006
|Cabot Microelectronic Corporation
|CMP composition comprising surfactant
|Jul 12, 2006
|Nov 9, 2006
|Micron Technology, Inc.
|Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
|Jul 12, 2006
|Nov 9, 2006
|Smith John S
|Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings
|Jul 12, 2006
|Nov 9, 2006
|Micron Technology, Inc.
|Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
|Jun 30, 2005
|Jan 11, 2007
|Cabot Microelectronics Corporation
|Use of CMP for aluminum mirror and solar cell fabrication
|Aug 3, 2005
|Feb 8, 2007
|Micron Technology, Inc.
|Backside silicon wafer design reducing image artifacts from infrared radiation
|Oct 10, 2006
|Mar 1, 2007
|Kao Corporation
|Polishing liquid composition
|Oct 10, 2006
|Apr 12, 2007
|Schatz Kenneth D
|Apparatus for block assembly process
|Dec 15, 2006
|Apr 26, 2007
|Smith John S
|Methods and apparatuses for fluidic self assembly
|Mar 31, 2009
|Aug 6, 2009
|Kao Corporation
|Polishing fluid composition
|U.S. Classification
|252/79.1, 252/79.4
|International Classification
|Cooperative Classification
|European Classification
|Jul 14, 1997
Owner name: CABOT CORPORATION, MASSACHUSETTS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KAUFMAN, VLASTA BRUSIC;WANG, SHUMIN;REEL/FRAME:008596/0751
Effective date: 19970707
|Jul 19, 2000
Owner name: CABOT MICROELECTRONICS CORPORATION, ILLINOIS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CABOT CORPORATION;REEL/FRAME:010984/0896
Effective date: 20000327
|Aug 22, 2003
|Fee payment
Year of fee payment: 4
|Apr 16, 2007
|Fee payment
Year of fee payment: 8
|Jul 5, 2011
|Fee payment
Year of fee payment: 12
|Feb 16, 2012
Owner name: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT, IL
Free format text: NOTICE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:CABOT MICROELECTRONICS CORPORATION;REEL/FRAME:027727/0275
Effective date: 20120213


text:
By Amir Mir
Manchester United will make a move for Liverpool transfer target Moussa Sissoko if a deal for Paul Pogba falls through, according to a report.
French outlet Le 10 Sport claim that United manager Jose Mourniho is ready to swoop for the France international if they are unable to sign Pogba.
Sissoko said in June to French website Foot Mercato that he wants to quit Newcastle this season even though he is contracted to the club until 2019.
The attacking midfielder produced an impressive display for France in their defeat to Portugal in the final of Euro 2016 and Newcastle subsequently increased their valuation of the 26-year-old.
Sky Sports claim the north-east giants will not let Sissoko leave for less than £35million this summer.
He joined Newcastle from Toulouse in 2013 and his since made 132 appearances for the club, scoring 12 times.
The Magpies have already sold winger Andros Townsend to Premier League club Crystal Palace for a fee of £12.8 million, despite the former Tottenham man only joining the club in January.
But manager Rafa Bentiez has claimed he does not need to cash in on the club's other prize assets as he prepares to gain instant promotion from the Championship this season.
As reported by Football Insider, Arsenal defender Isaac Hayden became the clubs fifth signing of the summer after a £2.5 million fee was agreed for the youngster.
The north east club have also snapped up winger Matt Ritchie from Bournemouth, Belgian goalkeeper Mat Sels, striker Dwight Gayle and Atletico Madrid left-back Jesus Gamez.
In other Liverpool news, Newcastle manager Rafa Bentiez is in line to make a shock move for a former England striker.


text:
VanessaSan... Makeup Artist
kristine galindoModel Female Oceanside, California, US
My MM URL: http://www.modelmayhem.com/onelove1life
Mayhem # 1026493
About Me
hi my name is kristine im starting out to become a model i have always loved modeling and want to start off a modeling career. im half black and half guatemalen im a fun outgoing person and im easy to work with. I would like to hopefully do some high fashion modeling or more print work. I'm looking for anything to build my portfolio. also Im up for anything new and fun for modeling but no nude!!
Have you worked with kristine galindo? Add Credits for kristine galindo! >>
Credit Notes
vanessa santana -makeup
Loading Content


text:
Simon Ruda
Small changes are really powerful, bring big impact and are more easy to convince policy-makers.
Jens Martens
Narrative of development that world is split between developed and underdeveloped countries, just measured by growth of GDP is wrong.
Lant Pritchett
Kinky development that ignores needs, wishes, wants and aspirations both of the poor and of the middle class is a narrow and shortsighted strategy.


text:
McCall's 6099; ©1961; Misses' Robe in Two Lengths "Easy to Sew". Single breasted Robe in Two lengths, with three quarter length, raglan sleeve;. Sleeves have shoulder darts. Choice of two collars or collarless neckline; patch pockets. Robe without collar has self fabric or eyelet ruffles in facing seams on right front and sleeves. Shorter robe with collar may have rick rack trim on sleeves and lower edge. Collar, sleeves and pocket tops of quilted robe are bound with bias contrast fabric.
Daughter's matching pattern is McCall's 6105.
Links to reviews/blog postsEdit
Add a photo to the gallery by clicking the "modify" button below.
[insert your username, and make sure your preferences allow for people to contact you via e-mail. Do not list your email address here!]


text:
I received a message in my inbox stating:
...you can complete any order over $99 today, and you'll have more time to pay.I thought I'd share in case someone becoems interested.
Now there's no need to be overcharged by your carrier. The OnePlus 2 starts at just $22.60 and OnePlus X starts at $16.12 with an 18-month plan.
For more information on this new feature, check out our announcement here.


text:
Artist's description:
An original framed oil painting executed in the tonalist tradition. Tonalism may elicit an emotional response from some viewers. This form of artistic endeavor may interact with the inner eye of the soul, even when revisited numerous times. This is the ethereal (or celestial) world I have found to be most compatible with my poetic imagination at this later stage of my painting career. Painting is framed and ready to hang with stainless steel hangers. Frame is platinum gold color. Free shipping by ground in U.S.A.
Materials used:
Oil on Linen
Approaching Storm (2012)
Oil painting by Jim Gola
- Oil painting on Panel / Board / MDF
- One of a kind artwork
- Size: 26 x 14 x 2 in (framed) / 24 x 12 x 0.25 in (unframed) / 24 x 12 in (actual image size)
- This artwork is sold framed
- Signed on the front
- Ready to hang
- Style: Photorealistic
- Subject: Landscapes, sea and sky
- Free Shipping
More by Jim Gola View all
View all
The Bottoms - Summer
Oil paintingby Jim Gola
The Bottoms
Oil paintingby Jim Gola
Iowa Fields
Oil paintingby Jim Gola
A Pond at Jackson Hole
Oil paintingby Jim Gola


text:
Cosmopolitan Congregation Of Dallas
One Day Youth Revival
You do not want to miss being apart of this community involvement
- Revival will be at the Bishop Arts Theatre at 215 S. Tyler St. Dallas TX. 75208
- Services held Sunday September 1, 2013 at 11 a.m.
New Levels In Christ Through Our Youth
When a defensive line is having trouble putting pressure on the quarterback (satan), the defensive coordinator (Jesus) may decide to help them out by sending one or more linebackers (youth) or defensive backs (Young adults) on a blitz.
God Is Calling For A Blitz
Just as important in the game of football as our frontline. Defensive Backs are known for their ability to be quick, strong fast but smart decision makers. They protect the back field, but now Jesus has called for us to cross the enemy lines. We must stop Satan before the line of scrimmage. He must not gain another yard!
How can we support our youth?
Who is considered youth?
How can we get our youth active?
Where do we find them?
How do we keep them Engaged?
We do encourage the youth to bring their parents. A team is not complete if both the front line and back line are not working together.


text:
US: Recycled precious metals aid supply for new catalysts
Strong metal demand and increased auto recycling have pushed up amounts of platinum and palladium recovered from used catalytic converters, and this supply should grow in the future, analysts said this week, according to Reuters.
Get full access to all content, just $1 for 30 days
A Message From The Editor
just-auto gives its paid members access to the very best automotive market coverage.
And now there's just-auto plus, our premium membership that gives you exclusive component forecast data, company profiles and extended news coverage - just for premium members.
Today I can offer you 30 days access for $1 - and that includes just-auto plus.
Dave Leggett, editor of just-auto
* plus VAT if applicable
Only on


text: No Judgment, Only Punishment is the tagline for Srikanth and Vimala Raman starring movie Sevakudu. The shooting of the film is in brisk progress in Hyderabad. Director Samudra says, We have recently shot one fight and some key scenes on Brahmanandam, Nazar, Sangeeta, Hema and others. The film is coming up with a tagline, No Judgment, Only Punishment. A special Bhoot Bungalow set was erected on Jubilee Hills Road No. 25 for a song Naa Okka Velu Chupithe Warninge Choodaraa… which is being choreographed by Amma Rajasekhar and is being shot on Srikanth, Satish, and 40 dancers. Samudra says The film would definitely attract the mass audiences. We are giving lot of preference to emotions and sentiment in this flick.Producer Sudhakar says, The current schedule would continue till May 5. The film which is being made with a powerful point, would definitely be a big hit.Ramya Krishnan, Bhuvaneswari, Taslima, Jayaprakash Reddy, Telangana Sakuntala, Sivajiraja, Dr Mohan and others are in the cast. Music is by Chakri, camera is by Purna Kandru, editing is by Gauthamraju while MA Azeem is the executive producer.


text:
Porcelain (band)
This article has multiple issues. Please help improve it or discuss these issues on the talk page. (Learn how and when to remove these template messages)(Learn how and when to remove this template message)
|Copenhagen, Denmark
|Emo rock
Melodic rock
|Years active
|Peter Urban
Jesper Urban
Jesper Valentin Holm
Niels Ole Præstbro
|Past members
|Anders Lorentzen
Jakob MørkHolt
Morten Pauck
Lasse Engelbreckt
Christian Odor
Porcelain is a Danish rock band formed in 1996 by the two brothers Peter Urban and Jesper Urban and their all time friend and childhood neighbour Anders Lorentzen. The original line-up was:
- Peter Urban (Vocals and guitars)
- Jesper Urban (Guitars)
- Anders Lorentzen (Guitars)
- Lasse Engelbrecht (Drums)
- Jakob Mørkholt (Bass)
The band recorded their first 4-track single "Lovesize" in the studio Sweet Silence (Metallica, Ride The Lightning and Master Of Puppets) together with producer Leo Wassinger. The song "Lovesize" received airplay from national and local radio stations and lead to interest from various major and independent labels. During 1997, the band accepted an offer from the Indy label [Lidocaine]. The band started writing new songs for a full-length album. In the summer 1997 the band left for Manchester UK, to record with the producer and composer Mark Pilkington. The band wanted to bring more electronic elements to the music and Mark Pilkinton was a perfect match. The new album was named Perfect Daze and released in 1997. Before the recording Anders Lorentzen decided to leave the band and was soon replaced by Morten Pauck.
Perfect Daze[edit]
Perfect Daze received reviews across the music press. The album was appreciated by the growing fan base and the band did their first national tour in the spring 1998. The violinist Vivi ... joined the band for the tour. Jakob Mørkholt decided to leave the band and he was replaced by Christian Odor. During the tour Porcelain played shows together with "The Ark" - the most successful Swedish band since ABBA. Porcelain also played a memorial concert for US legend Jeff Buckley together with major national artists of Steen Jørgensen (Sort Sol), Kasper Eistrup (Kashmir), Mikael Simpson and Hanne Boel.
Tomorrow will be Great[edit]
After the tour the band started writing new songs for a follow-up album to Perfect Daze. The band also started recording demos and songs with the previously Los Angeles based Swedish Producer Magnus Groth. The recording took place in the newly built studio "The Space". Together with Magnus Groth Porcelain headed into a more melodic and less noisy direction. The new album took the title "Tomorrow will be great" and was released in 2001. The album was followed up by a tour playing a couple of shows with National big act Tim Christensen
In 2006 the band formed a new line-up with drummer Jesper Valentin Holm and Niels Ole Præstbo as lead singer Peter Urban wanted to create a more authentic and tight rock sound. The new formation spawned a lot of fresh energy and the band soon decided to start recording the newly created material. The band teamed up with the experienced rock producer Morten Munck from the renowned Millfactory studio. The recordings resulted in the band's second 4-track single. The song "Glittergirl" made it "song of the week" on the American music network Reverb Nation. The band celebrated the success playing a short tour.
- Peter Urban, Vocals and Guitars
- Jesper Urban, Guitars
- Jesper Valentin Holm, Vocals and Drums
- Niels Ole Præstbro, Vocals and Bass
- Lovesize (4-track single, 1996)
- Perfect Daze (Album, 1998)
- Porcelain in space (Pre-production for TwbG album, 2000)
- Tomorrow will be Great (Album, 2001)
- Glittergirl (4-track single, 2006)
People who have worked with Porcelain[edit]
- Dan Stielow (Lidocaine)
- Leo Wassinger[1]
- Mark Pilkington[2]
- Robert Lund (Kitty Wu)
- Claus Bergmann (Kitty Wu)
- Henrik Søgaard (Passion Orange, Twoface)
- Per Lange
- Boe Larsen (Millfactory)
- Morten Munck (Millfactory)
- Søren Mikkelsen (Medley)
- Bo Karlsen (White Dwarf)
Jesper Urban also played with[edit]
- Envelope (Christoffer Høyer)
- Dragstrip Courage (Scott Janovitz)
Jesper Valentin Holm also played with[edit]
- Envelope (Christoffer Høyer)
- John Doe (Jesper Korre Andersen)
- ^ "Leo Wassinger". LinkedIn. Retrieved 2012-12-01.
- ^ "Mark Pilkington – Discover music, concerts, stats, & pictures at". Last.fm. Retrieved 2012-12-01.
External links[edit]
|This article's use of external links may not follow Wikipedia's policies or guidelines. (December 2012) (Learn how and when to remove this template message)


text:
Elder vampires within the Ebony Kingdom are considered Kholo, which means that they are allowed to advise the Magaji in a similar manner to the Primogen's relationship with a Prince in western society. Every Legacy can allocate elders to the Kholo.
The institution of Kholo is separate to the title of Magaji and this allows the Elders of a domain much freedom and influence within a domain where they are eldest. When they move to another domain where elder vampires reside, they lose their status as Kholo.
Vampire: The Masquerade-related article is a stub. You can help WWWiki by fixing it.


text:
Author Tags: Fiction, Kidlit & Young Adult
As a hobby placer gold miner Sharp-Eagle has spent a lot of time in the B.C. wilderness, which served as inspiration for her debut novel, Kimbal Creek Secrets. There's more than just gold on Kimbal Creek, as orphaned brothers Jamie and Oliver Stewart discover when they find mystical creatures during the Cariboo gold rush which sets them on a quest to help break a curse.
Marg Sharp-Eagle is a Veteran of the Royal Canadian Air Force and the RCSC Militia. Sharp-Eagle was born in Vancouver, and raised in the South Okanagan.
Kimbal Creek Secrets (Friesen Press 2016):
Hardcover $24.99 ISBN 978-1-4602-8044-7
Paperback $14.99 ISBN 978-1-4602-8045-4
e-book $2.99 ISBN 978-1-4602-8046-1