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I will be honest. I am at the end of my rope here. Since losing wieght I have asked out 6 girls, the 6th being last night. I had high hopes. She had started convos with me, never took her eyes off me, always wanted to talk and hang around, never stopped playing with her hair etc, textbook. So finally I asked her out and she said she was "already in a relationship" Now that could mean with a guy or a girl and if its the latter then I will lose my mind because that would be the 5th lesbian I've asked out so far. I really need some advice so I dont keep approaching girls who can't possibly work out. I have tried my best, but still am yet to get anything more than a handshake greeting.
Most Helpful Girl
I'm on the same boat, I'm 22 and haven't been taken out on a date. But because of that, when guys would hint at wanting to take me out, I shied away from it because I gave up. But that was my mistake now.
Don't let your past experiences get you down. Just enjoy life in the meantime without expecting it to happen.00|00|0


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I caught Phil Donahue on Rachel Maddow's show Friday night; it's always reassuring to see him out and about and it's especially ironic to watch him on MSNBC, where he at one time hung his hat and hosted a talk-show in the time slot now occupied by Countdown with Keith Olbermann. Donahue got his pink slip from the cable network because (according to the powers-that-be) his ratings were dismal, but a majority of people dismiss this as road apples (his show was outdrawing Chris Matthews', ferchrissake) and believe it was the anti-war content of his telecasts that made the suits nervous, particularly since everyone at MSNBC was in the tank for the grand and glorious excursion then known as Operation Iraqi Freedom. (Olbermann pointed out on a recent Countdown that while that may have played a role in the network's decision to cut Donahue loose, the real reason for his exit was that he insisted on doing the program in front of a live audience, which added considerable expense to the show's budget.)
Phil was on the Maddow show to promote a sobering, award-winning documentary which will make its television debut on The Sundance Channel Tuesday (November 11, Veterans' Day) entitled Body of War (2007). Written, produced and directed in tandem with Ellen Spiro, Body outlines the true-life tale of Tomas Young, an Iraqi war veteran who—five days after being stationed in the conflict—returns to the United States paralyzed from a bullet to his spine. As Donahue related Friday night:
Tomas is paralyzed from the nipples down. Tomas can't walk. Tomas can't cough. Tomas can't sweat, you know—his respiratory system doesn't work…morning nausea, UTI…the more you…the closer you…we've been living and watching this for four years now. So it's become a real chapter in our lives, a very personal experience…and it shows the harm in harm's way…in…at a time when we have the most sanitized war in our history.
Young's condition takes a major toll on his family: his mother is moved (along with Tomas) to engage in political activism against the war and his wife devotes herself to taking care of her husband…but sadly, as the documentary progresses, we learn that the young couple end up separating as a result of the pressures involved. His brother Nathan also deploys for Iraq (the closing credits tell us that after serving a year there, he was redeployed in September 2007), much to his mother's concern and dismay.
As Tomas' story unfolds, Spiro and Donahue skillfully blend another element into their fascinating documentary: the debate in the U.S. Senate during the rush to war, and how 77 members of that august body voted to give the Bush administration a blank check in an atmosphere of fear. West Virginia's senior senator, Robert C. Byrd—a man I have strenuously disagreed with on various issues in the past—was the only individual who had apparently read the U.S. Constitution at that historical juncture, and parts of his stirring oratory on the floor of the Senate denouncing the decision are prominently featured in Body. There's also a scene where Young and Byrd meet in his office, and the Senator reads the list of the "Immortal 23"—the number of senators who voted no—but asks the young veteran for help since he's not wearing his glasses. The sight of these two men—one permanently in a wheelchair, the other infirmed by age—making their way down the halls of the Senate was enough to produce a "Niagara Falls" moment in yours truly. (The other moment in the film that moved me—a moment of joy rather than sorrow—is when Young is jeered at during an anti-war rally by a group of clueless pro-war protestors, who frustrate him to the point where he yells: "If I wasn't in this wheelchair, I'd kick your ass!")
More from the Donahue interview:
The President said you can't shoot the…take pictures of the coffins, and the entire press corps said "Okay." (Holding up DVD) This shows…the pain. This shows what I think is…we hope it's a shaft of light in a big, dark hole which I think has been left by corporate media…this is not television fare…this will not draw an audience…this is not good for business.
But it is positively riveting stuff. And because I'm fortunate to receive Sundance on Demand courtesy of CharredHer, it was well worth my time—so if you're in the same position…or have access to The Sundance Channel this Tuesday, I strongly suggest you check it out.

subset: commoncrawl


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AAOM Members Listed in Boston Magazine's Top Dentists 2017
AAOM Member Awarded Glennan Fellowship
US Court of Appeals Upholds AAOM's Texas Victory
AAOM Member Chosen as Fellow of Duke-Johnson & Johnson Nurse Leadership Program
Share Your Research Ideas with NIH/NIDCR
Organization of Teachers of Oral Diagnosis Meeting
October 7, 2017 AAOMR Course
St. Louis, Missouri
November 4, 2017 Fall Meeting
Chapel Hill, NC
April 10-14, 2018 Annual Meeting
San Antonio, TX
May 21-25, 2019 Annual Meeting
New Orleans, LA
|Affiliate Fellowship (AFAOM)
AAOM is proud to announce the implementation of the Affiliate Fellowship in conjunction with its initiative, The Future of Oral Medicine. Now a variety of healthcare practitioners can join the ranks of other AAOM Fellows in being recognized as attaining the highly respected and sought after credential of Fellowship.
The Affiliate Fellowship can be obtained by holding Affiliate membership with AAOM and by passing the AAOM Affiliate Fellowship examination which is given once a year at the AAOM Annual Conference. Affiliate Membership is a non-dentist holding a doctoral degree or a professional degree in dental hygiene or any other related healthcare discipline. These individuals are typically involved in teaching, research or practice in oral medicine and not otherwise eligible for another category of membership.
Those who wish to pursue the Affiliate Fellowship credential with AAOM must demonstrate their qualifications by:
Specific requirements, application timeline and process and additional materials.
From left to right: Dr. A. Ross Kerr, Ms. Andrea Cline,
Dr. Mike Hatton, Dr. Nancy Burkhart, and Dr. Wendy Hupp


text:
There's this guy that my friend is trying to hook me up with but I don't know if it's a good idea since he's a freshman in high school. I am 3 years older than him and I'm really skeptical about it. Should the age matter in this situation? And besides I'm leaving for college in August anyways.. I don't know is the age gap weird?
Most Helpful Guy
At that age I would say yes and also NEVER get set up with someone it almost always leads to trouble11|00|0


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|Publication number
|Publication type
|Application number
|Publication date
|Mar 14, 2006
|Filing date
|Jul 24, 2003
|Priority date
|Mar 20, 2000
|Fee status
|Also published as
|Publication number
|Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ralph Albano, Ivan L. Berry, III, Atsushi Shiota
|Original Assignee
|Axcelis Technologies, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (55), Non-Patent Citations (5), Referenced by (5), Classifications (47), Legal Events (7)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a continuation-in-part of U.S. patent application Ser. No. 10/346,560, filed Jan. 17, 2003 now abandoned and entitled "FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K MATERIALS", which is a continuation-in-part of U.S. patent application Ser. No. 09/952,649, filed Sep. 14, 2001 and entitled "PLASMA CURING PROCESS FOR POROUS LOW-K MATERIALS", now U.S. Pat. No. 6,913,796 which is a continuation-in-part of U.S. patent application Ser. No. 09/528,835, filed Mar. 20, 2000 and entitled "HIGH MODULUS, LOW DIELECTRIC CONSTANT COATINGS" (now U.S. Pat. No. 6,576,300) and a continuation-in-part of U.S. patent application Ser. No. 09/681,332, filed Mar. 19, 2001 and entitled "PLASMA CURING PROCESS FOR POROUS SILICA THIN FILM" (now U.S. Pat. No. 6,558,755), the disclosures of which are incorporated herein by reference.
This invention relates generally to a process which is employed in manufacturing semiconductor chips. More particularly, the invention relates to a process for improving the structural properties of certain porous materials that are utilized as integrated circuit (IC) dielectrics.
New materials with low dielectric constants (known in the art as "low-k dielectrics") are being investigated for their potential use as insulators in semiconductor chip designs. A low dielectric constant material aids in enabling further reductions in integrated circuit feature dimensions. The substance with the lowest dielectric constant is air (k=1.0). Therefore, porous dielectrics are very promising candidates since they have the potential to provide very low dielectric constants. Unfortunately, however, such porous low-k dielectrics typically have the problem of insufficient mechanical strength.
Thin film dielectric coatings on electric devices are known in the art. For instance, U.S. Pat. Nos. 4,749,631 and 4,756,977, to Haluska et al., disclose silica based coatings produced by applying solutions of silicon alkoxides or hydrogen silsesquioxane, respectively, to substrates and then heating the coated substrates to a temperature between 200 and 1000° C. The dielectric constant of these coatings is often too high for certain electronic devices and circuits.
U.S. Pat. Nos. 4,847,162 and 4,842,888, to Haluska et al., teach the formation of nitrided silica coatings by heating hydrogen silsesquioxane resin and silicate esters, respectively, to a temperature between 200 and 1000° C. in the presence of ammonia.
Glasser et al., Journal of Non-Crystalline Solids, 64 (1984) pp. 209-221, teaches the formation of ceramic coatings by heating tetraethoxysilane in the presence of ammonia. This reference teaches the use of anhydrous ammonia and that the resulting silica coatings are nitrided.
U.S. Pat. No. 4,636,440, to Jada, discloses a method of reducing the drying time for a sol-gel coated substrate comprising exposing the substrate to aqueous quaternary ammonium hydroxide and/or alkanol amine compounds. Jada requires that the coating be dried prior to heating. It is specifically limited to hydrolyzed or partially hydrolyzed silicon alkoxides.
U.S. Pat. No. 5,262,201, to Chandra et al., and U.S. Pat. No. 5,116,637, to Baney et al., teach the use of basic catalysts to lower the temperature necessary for the conversion of various preceramic materials, all involving hydrogen silsesquioxane, to ceramic coatings. These references teach the removal of solvent before the coating is exposed to the basic catalysts.
U.S. Pat. No. 5,547,703, to Camilletti et al., teaches a method for forming low dielectric constant Si—O containing coatings on substrates comprising heating a hydrogen silsesquioxane resin successively under wet ammonia, dry ammonia, and oxygen. The resultant coatings have dielectric constants as low as 2.42 at 1 MHz. This reference teaches the removal of solvent before converting the coating to a ceramic.
U.S. Pat. No. 5,523,163, to Balance et al., teaches a method for forming Si—O containing coatings on substrates comprising heating a hydrogen silsesquioxane resin to convert it to a Si—O containing ceramic coating and then exposing the coating to an annealing atmosphere containing hydrogen gas. The resultant coatings have dielectric constants as low as 2.773. The reference teaches the removal of solvent before converting the coating to a ceramic.
U.S. Pat. No. 5,618,878, to Syktich et al., discloses coating compositions containing hydrogen silsesquioxane resin dissolved in saturated alkyl hydrocarbons useful for forming thick ceramic coatings. The alkyl hydrocarbons disclosed are those up to dodecane. The reference does not teach exposure of the coated substrates to basic catalysts before solvent removal.
U.S. Pat. No. 6,231,989, to Chung et al., entitled "METHOD OF FORMING COATINGS" discloses a method of making porous network coatings with low dielectric constants. The method comprises depositing a coating on a substrate with a solution comprising a resin containing at least 2 Si—H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition. The coating is then exposed to an environment comprising a basic catalyst and water. Finally, the solvent is evaporated from the coating to form a porous network. If desired, the coating can be cured by heating to form a ceramic. Films made by this process have dielectric constants in the range of 1.5 to 2.4 with an elastic modulus between about 2 and about 3 GPa.
Porous low-k dielectric materials produced by spin-on and chemical vapor deposition processes typically require a curing process subsequent to the deposition. Typical process conditions for curing these low-k films include nitrogen purged furnace anneals at temperatures between about 350 and about 450° C. for 30 to 180 minutes. As was described in U.S. patent application Ser. Nos. 09/681,332, 09/952,649, 09/906,276 and 09/952,398, the disclosures of which are incorporated herein by reference, instead of thermally curing and plasma treating, porous network coatings can be plasma or UV cured, eliminating the need for prior furnace curing.
However, there remains a need for a process for making a porous low-k material with improved structural properties, such as an improved elastic modulus and material hardness, without compromising or deteriorating its electrical properties.
The present invention meets that need by providing a fluorine-free plasma curing process for porous low-k materials.
Although the present invention is not limited to specific advantages or functionality, it is noted that the process produces materials having a low dielectric constant and an improved elastic modulus and material hardness. The process significantly reduces cure process times and enables curing at low wafer temperatures as compared to conventional heat curing techniques, in addition to the advantages associated with eliminating the exposure of the dielectric to fluorine plasma species.
In accordance with one embodiment of the present invention, a process is provided for making a fluorine-free plasma cured material comprising providing a porous dielectric material having a first dielectric constant, having a first elastic modulus, and having a first material hardness. The porous dielectric material is plasma cured with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material having a second dielectric constant which is comparable to the first dielectric constant, having a second elastic modulus which is greater than the first elastic modulus, and having a second material hardness which is greater than the first material hardness. By "comparable to" we mean both equal to and slightly less than, such as, for example, a second dielectric constant which is 0.05 less than the first dielectric constant. The increase in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The increase in material hardness is typically greater than or about 50%.
Accordingly, it is an object of the present invention to produce porous dielectric materials having improved elastic modulus and material hardness, and a low dielectric constant.
These and other features and advantages of the invention will be more fully understood from the following detailed description of the invention. It is noted that the scope of the claims is defined by the recitations therein and not by the specific discussion of features and advantages set forth in the present description.
The present invention is based on the discovery that plasma curing virtually any porous dielectric material, without the necessity of thermally curing the material, increases the elastic modulus (Young's modulus) and material hardness of the material while maintaining dramatically reduced curing process time without suffering its low dielectric constant properties. The porous dielectric material can include, but is not limited to, organic dielectric materials such as hydrogen silsesquioxane (HSQ), methylsilsesquioxane (MSQ), and combinations thereof, inorganic dielectric materials, and combinations thereof, which can be produced by depositing a dielectric coating on a substrate using spin-on or chemical vapor deposition (CVD) processes. The porous dielectric materials can have porogen-generated, solvent-formed, or molecular engineered pores, which may be interconnected or closed, and which may be distributed random or ordered, such as vertical pores.
The process of the present invention is particularly applicable to the deposition of coatings on electronic devices or electronic circuits where they can serve as interlevel dielectric layers, doped dielectric layers to produce transistor-like devices, pigment loaded binder systems containing silicon to produce capacitor and capacitor-like devices, multilayer devices, 3-D devices, silicon on insulator devices, super lattice devices, and the like. However, the choice of substrates and devices to be coated by the instant invention is limited only by the need for thermal and chemical stability of the substrate at the temperature and pressure used in the present invention. As such, the porous dielectric materials of the present invention can be used on substrates such as plastics including, for example, polyimides, epoxies, polytetrafluoroethylene and copolymers thereof, polycarbonates, acrylics and polyesters, ceramics, leather, textiles, metals, and the like.
As used in the present invention, the expression "ceramic" includes ceramics such as amorphous silica and ceramic-like materials such as amorphous silica-like materials that are not fully free of carbon and/or hydrogen but are otherwise ceramic in character. The expressions "electronic device" or "electronic circuit" include, but are not limited to, silica-based devices, gallium arsenide based devices, silicon carbide based devices, focal plane arrays, opto-electronic devices, photovoltaic cells, and optical devices.
A porous dielectric material is needed as a starting material for the present invention. Typical HSQ-based dielectric materials for use with the present invention include FOx HSQ-based dielectric material and XLK porous HSQ-based dielectric material available from Dow Corning Corporation (Midland, Mich.). In addition, typical ultra low-k porous dielectric MSQ-based materials, made by spin-on processing, for use with the present invention are available from Chemat Technology, Inc. (Northridge, Calif.) and JSR Corporation (Tokyo, Japan).
The following method of producing a porous network coating is provided as an example of the production of a typical porous dielectric material. It is not the inventors' intent to limit their invention to only MSQ-based films. The process of the present invention is applicable to virtually any porous dielectric material.
LKD (available from JSR Corporation, Tokyo, Japan) is a coating composition prepared by dissolving at least one siloxane compound in an organic solvent (hereinafter referred to as "coating composition"). Ingredient (A) which is the siloxane compound in the present invention is a product of the hydrolysis and/or condensation of at least one compound selected from the group consisting of compounds represented by the following formula (1) (hereinafter referred to as "compounds (1)"):
R1 aSi(OR2)4-a (1)
wherein R1 represents a hydrogen atom or a monovalent organic group; R2 represents a monovalent organic group; and a is an integer of 0 to 2, and compounds represented by the following formula (2) (hereinafter referred to as "compounds (2)"):
R3 b(R4O)3-bSi(R7)dSi(OR5)3-cR6 c (2)
wherein, R3, R4, R5, and R6 may be the same or different and each represents a monovalent organic group; b and c may be the same or different and each is an integer of 0 to 2; R7 represents an oxygen atom or a group represented by —(CH2)n—, wherein n is an integer of 1 to 6; and d is the integer 0 or 1.
Examples of the monovalent organic groups represented by R1 and R2 in formula (1) include alkyl, aryl, allyl, and glycidyl groups. In formula (1), R1 is typically a monovalent organic group, more typically an alkyl or phenyl group.
The alkyl group typically has 1 to 5 carbon atoms, and examples thereof include methyl, ethyl, propyl, and butyl. Those alkyl groups may be linear or branched, and may be ones in which one or more of the hydrogen atoms have been replaced, for example, with fluorine atoms.
In formula (1), examples of the aryl group include phenyl, naphthyl, methylphenyl, ethylphenyl, chlorophenyl, bromophenyl, and fluorophenyl.
Specific examples of the compounds represented by formula (1) include: trialkoxysilanes such as trimethoxysilane, triethoxysilane, tri-n-propoxysilane, triisopropoxysilane, tri-n-butoxysilane, tri-sec-butoxysilane, tri-tert-butoxysilane, triphenoxysilane, fluorotrimethoxysilane, fluorotriethoxysilane, fluorotri-n-propoxysilane, fluorotriisopropoxysilane, fluorotri-n-butoxysilane, fluorotri-sec-butoxysilane, fluorotri-tert-butoxysilane, and fluorotriphenoxysilane; tetraalkoxysilanes such as tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetraisopropoxysilane tetra-n-butoxysilane, tetra-sec-butoxysilane, tetra-tert-butoxysilane, and tetraphenoxysilane; alkyltrialkoxysilanes such as methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltriisopropoxysilane, methyltri-n-butoxysilane, methyltri-sec-butoxysilane, methyltri-tert-butoxysilane, methyl triphenoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltri-n-propoxysilane, ethyltriisopropoxysilane, ethyltri-n-butoxysilane, ethyltri-sec-butoxysilane, ethyltri-tert-butoxysyilane, ethyltriphenoxysilane viniltrimethoxysilane, vinyltriethoxysilane, vinyltri-n-propoxysilane, vinyltriisopropoxysilane, vinyltri-n-butoxysilane, vinyltri-sec-butoxysilane, vinyltri-tert-butoxysilane, vinyltriphenoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-propyltri-n-propoxysilane, n-propyltriisopropoxysilane, n-propyltri-n-butoxysilane, n-propyltri-sec-butoxysilane, n-propyltri-tert-butoxysilane, n-propyltriphenoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane, isopropyltri-n-propoxysilane, isopropyltriisopropoxysilane, isopropyltri-n-butoxysilane, isopropyltri-sec-butoxysilane, isopropyltri-tert-butoxysilane, isopropyltriphenoxysilane, n-butyltrimethoxysilane, n-butyltriethoxysilane, n-butyltri-n-propoxysilane, n-butyltriisopropoxysilane, n-butyltri-n-butoxysilane, n-butyltri-sec-butoxysilane, n-butyltri-tert-butoxysilane, n-butyltriphenoxysilane, sec-butyltrimethoxysilane, sec-butyltriethoxysilane, sec-butyltri-n-propoxysilane, sec-butyltriisopropoxysilane, sec-butyltri-n-butoxysilane, sec-butyltri-sec-butoxysilane, sec-butyltri-tert-butoxysilane, sec-butyltriphenoxysilane, tert-butyltrimethoxysilane, tert-butyltriethoxysilane, tert-butyltri-n-propoxysilane, tert-butyltriisopropoxysilane, tert-butyltri-n-butoxysilane, tert-butyltri-sec-butoxysilane, and tert-butyltri-tert-butoxysilane; tert-butyltriphenoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, phenyltri-n-propoxysilane, phenyltriisopropoxysilane, phenyltri-n-butoxysilane, phenyltri-sec-butoxysilane, phenyltri-tert-butoxysilane, phenyltriphenoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-trifluoropropyltrimethoxysilane, and γ-trifluoropropyltriethoxysilane; and dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldi-n-propoxysilane, dimethyldiisopropoxysilane, dimethyldi-n-butoxysilane, dimethyldi-sec-butoxysilane, dimethyldi-tert-butoxysilane, dimethyldiphenoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diethyldi-n-propoxysilane, diethyldiisopropoxysilane, diethyldi-n-butoxysilane, diethyldi-sec-butoxysilane, diethyldi-tert-butoxysilane, diethyldiphenoxysilane, di-n-propyldimethoxysilane, di-n-propyldiethoxysilane, di-n-propyldi-n-propoxysilane, di-n-propyldiisopropoxysilane, di-n-propyldi-n-butoxysilane, di-n-propyldi-sec-butoxysilane, di-n-propyldi-tert-butoxysiane, di-n-propyldiphenoxysilane, diisopropyldimethoxysilane, diisopropyldiethoxysilane, diisopropyldi-n-propoxysilane, diisopropyldiisopropoxysilane, diisopropyldi-n-butoxysilane, diisopropyldi-sec-butoxysilane, diisopropyldi-tert-butoxysilane, diisopropyldiphenoxysilane, di-n-butyldimethoxysilane, di-n-butyldiethoxysilane, di-n-butyldi-n-propoxysilane, di-n-butyldiisopropoxysilane, di-n-butyldi-n-butoxysilane, di-n-butyldi-sec-butoxysilane, di-n-butyldi-tert-butoxysilane, di-n-butyldiphenoxysilane, di-sec-butyldimethoxysilane, di-sec-butyldiethoxysilane, di-sec-butyldi-n-propoxysilane, di-sec-butyldiisopropoxysilane, di-sec-butyldi-n-butoxysilane, di-sec-butyldi-sec-butoxysilane, di-sec-butyldi-tert-butoxysilane, di-sec-butyldiphenoxysilane, di-tert-butyldimethoxysilane, di-tert-butyldiethoxysilane, di-tert-butyldi-n-propoxysilane, di-tert-butyldiisopropoxysilane, di-tert-butyldi-n-butoxysilane, di-tert-butyldi-sec-butoxysilane, di-tert-butyldi-tert-butoxysilane, di-tert-butyldiphenoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, diphenyldi-n-propoxysilane, diphenyldiisopropoxysilane, diphenyldi-n-butoxysilane, diphenyldi-sec-butoxysilane, diphenyldi-tert-butoxysilane, diphenyldiphenoxysilane, divinyltrimethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-trifluoropropyltrimethoxysilane, and γ-trifluoropropyltriethoxysilane.
Typical of those compounds (1) are tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetraisopropoxysilane, tetraphenoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltri-n-propoxysilane, methyltriisopropoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, trimethylmonomethoxysilane, trimethylmonoethoxysilane, triethylmonomethoxysilane, triethylmonoethoxysilane, triphenylmonomethoxysilane, and triphenylmonoethoxysilane.
In formula (2), examples of the monovalent organic group include the same organic groups as those enumerated above with regard to formula (1).
Examples of the divalent organic group represented by R7 in formula (2) include alkylene groups having 2 to 6 carbon atoms, such as methylene.
Examples of the compounds represented by formula (2) wherein R7 is an oxygen atom include hexamethoxydisiloxane, hexaethoxydisiloxane, hexaphenoxydisiloxane, 1,1,1,3,3-pentamethoxy-3-methyldisiloxane, 1,1,1,3,3-pentaethoxy-3-methyldisiloxane, 1,1,1,3,3-pentamethoxy-3-phenyldisiloxane, 1,1,1,3,3-pentaethoxy-3-phenyldisiloxane, 1,1,3,3-tetramethoxy-1,3-dimethyldisiloxane, 1,1,3,3-tetraethoxy-1,3-dimethyldisiloxane, 1,1,3,3-tetramethoxy-1,3-diphenyldisiloxane, 1,1,3,3-tetraethoxy-1,3-diphenyldisiloxane, 1,1,3,-trimethoxy-1,3,3-trimethyldisiloxane, 1,1,3-triethoxy-1,3,3-trimethyldisiloxane, 1,1,3-trimethoxy-1,3,3-triphenyldisiloxane, 1,1,3-triethoxy-1,3,3-triphenyldisiloxane, 1,3-dimethoxy-1,1,3,3-tetramethyldisiloxane, 1,3-diethoxy-1,1,3,3-tetramethyldisiloxane, 1,3-dimethoxy-1,1,3,3-tetraphenyldisiloxane, and 1,3-diethoxy-1,1,3,3-tetraphenyldisiloxane. Typically, these are hexamethoxydisiloxane, hexaethoxydisiloxane, 1,1,3,3-tetramethoxy-1,3-dimethyldisiloxane, 1,1,3,3-tetraethoxy-1,3-dimethyldisiloxane, 1,1,3,3-tetramethoxy-1,3-diphenyldisiloxane, 1,3-dimethoxy-1,1,3,3-tetramethyldisiloxane, 1,3-diethoxy-1,1,3,3-tetramethyIdisiloxane, 1,3-dimethoxy-1,1, 3,3-tetraphenyldisiloxane,1,3-diethoxy-1,1,3,3-tetraphenyldisiloxane, and the like.
Examples of the compounds represented by formula (2) wherein d is the integer 0 include hexamethoxydisilane, hexaethoxydisilane, hexaphenoxydisilane, 1,1,1,2,2-pentamethoxy-2-methyldisilane, 1,1,1,2,2-pentaethoxy-2-methyldisilane, 1,1,1,2,2-pentamethoxy-2-phenyldisilane, 1,1,1,2,2-pentaethoxy-2-phenyldisilane, 1,1,2,2-tetramethoxy-1,2-dimethyldisilane, 1,1,2,2-tetraethoxy-1,2-dimethyldisilane, 1,1,2,2-tetramethoxy-1,2-diphenyldisilane, 1,1,2,2-tetraethoxy-1,2-diphenyldisilane, 1,1,2-trimethoxy-1,2,2-trimethyldisilane, 1,1,2-triethoxy-1,2,2-trimethyldisilane, 1,1,2-trimethoxy-1,2,2-triphenyldisilane, 1,1,2-triethoxy-1,2,2-triphenyldisilane, 1,2-dimethoxy-1,1,2,2-tetramethyldisilane, 1,2-diethoxy-1,1,2,2-tetramethyldisilane, 1,2-dimethoxy-1,1,2,2-tetraphenyldisilane, and 1,2-diethoxy-1,1,2,2-tetraphenyldisilane.
Examples of the compounds represented by formula (2) wherein R7 is a group represented by —(CH2)— include bis(hexamethoxysilyl)methane, bis(hexaethoxysilyl)methane, bis(hexaphenoxysilyl)methane, bis(dimethoxymethylsilyl)methane, bis(diethoxymethylsilyl)methane, bis(dimethoxyphenylsilyl)methane, bis(diethoxyphenylsilyl)methane, bis(methoxydimethylsilyl)methane, bis(ethoxydimethylsilyl)methane, bis(methoxydiphenylsilyl)methane, bis(ethoxydiphenylsilyl)methane, bis(hexamethoxysilyl)ethane, bis(hexaethoxysilyl)ethane, bis(hexaphenoxysilyl)ethane, bis(dimethoxymethylsilyl)ethane, bis(diethoxymethylsilyl)ethane, bis(dimethoxyphenylsilyl)ethane, bis(diethoxyphenylsilyl)ethane, bis(methoxydimethylsilyl)ethane, bis(ethoxydimethylsilyl)ethane, bis(methoxydiphenylsilyl)ethane, bis(ethoxydiphenylsilyl)ethane, 1,3-bis(hexamethoxysilyl)propane, 1,3-bis(hexaethoxysilyl)propane, 1,3-bis(hexaphenoxysilyl)propane, 1,3-bis(dimethoxymethylsilyl)propane, 1,3-bis(diethoxymethylsilyl)propane, 1,3-bis(dimethoxyphenylsilyl)propane, 1,3-bis(diethoxyphenylsilyl)propane, 1,3-bis(methoxydimehylsilyl)propane, 1,3-bis(ethoxydimethylsilyl)propane, 1,3-bis(methoxydiphenylsilyl)propane, and 1,3-bis(ethoxydiphenylsilyl)propane. Typically, these are hexamethoxydisilane, hexaethoxydisilane, hexaphenoxydisilane, 1,1,2,2-tetramethoxy-1,2-dimethyldisilane, 1,1,2,2-tetraethoxy-1,2-dimethyldisilane, 1,1,2,2-tetramethoxy-1,2-diphenyldisilane, 1,1,2,2-tetraethoxy-1,2-diphenyldisilane, 1,2-dimethoxy-1,1,2,2-tetramethyldisilane, 1,2-diethoxy-1,1,2,2-tetramethyldisilane,1,2-dimethoxy-1,1,2,2-tetraphenyldisilane, 1,2-diethoxy-1,1,2,2-tetraphenyldisilane, bis(hexamethoxysilyl)methane, bis(hexaethoxysilyl)methane, bis(dimethoxymethylsilyl)methane, bis(diethoxymethylsilyl)methane, bis(dimethoxyphenylsilyl)methane, bis(diethoxyphenylsilyl)methane, bis(methoxydimethylsilyl)methane, bis(ethoxydimethylsilyl)methane, bis(methoxydiphenylsilyl)methane, and bis(ethoxydiphenylsilyl)methane.
In the present invention, it is typical to use a combination of an alkyltrialkoxysilane and a tetraalkoxysilane among the compounds (1) and (2) enumerated above. In this case, the proportion of the tetraalkoxysilane is generally from about 5 to about 75% by weight, typically from about 10 to about 70% by weight, more typically from about 15 to about 70% by weight, and that of the alkyltrialkoxysilane is generally from about 25 to about 95% by weight, typically from about 30 to about 90% by weight, more typically from about 30 to about 85% by weight, in terms of the amount of the product of complete hydrolysis and condensation. When a tetraalkoxysilane and a trialkoxysilane are used in a proportion within that range, the coating film obtained has a high modulus of elasticity and an exceedingly low dielectric constant.
The term "product of complete hydrolysis and condensation" as used herein means a product in which all the R2O—, R4O—, and R5O— groups in the compounds (1) and (2) have been hydrolyzed into SiOH groups and completely condensed to form a siloxane structure.
The compounds (1) and (2) are hydrolyzed and condensed in an organic solvent. Water is typically used in the hydrolysis and condensation in an amount of from about 0.3 to about 10 mol per mol of the groups represented by R2O—, R4O—, and R5O— in formulae (1) and (2).
A catalyst is generally used for the hydrolysis and condensation of the compounds (1) and (2) in an organic solvent.
Examples of the catalyst include organic acids, inorganic acids, organic bases, inorganic bases, and metal chelates.
Examples of the organic acids include acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, oxalic acid, maleic acid, methylmalonic acid, adipic acid, sebacic acid, gallic acid, butyric acid, mellitic acid, arachidonic acid, shikimic acid, 2-ethylhexanoic acid, oleic acid, stearic acid, linoleic acid, linolenic acid, salicylic acid, benzoic acid, p-aminobenzoic acid, p-toluenesulfonic acid, benzenesulfonic acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoroacetic acid, formic acid, malonic acid, sulfonic acids, phthalic acid, fumaric acid, citric acid, and tartaric acid.
Examples of the inorganic acids include hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, and phosphoric acid.
Examples of the inorganic bases include ammonia, sodium hydroxide, potassium hydroxide, barium hydroxide, and calcium hydroxide.
Examples of the organic bases include methanolamine, ethanolamine, propanolamine, butanolamine, N-methylmethanolamine, N-ethylmethanolamine, N-propylmethanolamine, N-butylmethanolamine, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, N-methylpropanolamine, N-ethylpropanolamine, N-propylpropanolamine, N-butylpropanolamine, N-methylbutanolamine, N-ethylbutanolamine, N-propylbutanolamine, N-butylbutanolamine, N,N-dimethylmethanolamine, N,N-diethylmethanolamine, N,N-dipropylmethanolamine, N,N-dibutylmethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dipropylethanolamine, N,N-dibutylethanolamine, N,N-dimethylpropanolamine, N,N-diethylpropanolamine, N,N-dipropylpropanolamine, N,N-dibutylpropanolamine, N,N-dimethylbutanolamine, N,N-diethylbutanolamine, N,N-dipropylbutanolamine, N,N-dibutylbutanolamine, N-methyldimethanolamine, N-ethyldimethanolamine, N-propyldimethanolamine, N-butyldimethanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, N-propyldiethanolamine, N-butyldiethanolamine, N-methyldipropanolamine, N-ethyldipropanolamine, N-propyldipropanolamine, N-butyldipropanolamine, N-methyldibutanolamine, N-ethyldibutanolamine, N-propyldibutanolamine, N-butyldibutanolamine, N-(aminomethyl)methanolamine, N-(aminomethyl)ethanolamine, N-(aminomethyl)propanolamine, N-(aminomethyl)butanolamine, N-(aminoethyl)methanolamine, N-(aminoethyl)ethanolamine, N-(aminoethyl)propanolamine, N-(aminoethyl)butanolamine, N-(aminopropyl)methanolamine, N-(aminopropyl)ethanolamine, N-(aminopropyl)propanolamine, N-(aminopropyl)butanolamine, N-(aminobutyl)methanolamine, N-(aminobutyl)ethanolamine, N-(aminobutyl)propanolamine, N-(aminobutyl)butanolamine, methoxymethylamine, methoxyethylamine, methoxypropylamine, methoxybutylamine, ethoxymethylamine, ethoxyethylamine, ethoxypropylamine, ethoxybutylamine, propoxymethylamine, propoxyethylamine, propoxypropylamine, propoxybutylamine, butoxymethylamine, butoxyethylamine, butoxypropylamine, butoxybutylamine, methylamine, ethylamine, propylamine, butylamine, N,N-dimethylamine, N,N-diethylamine, N,N-dipropylamine, N,N-dibutylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetramethylethylenediamine, tetraethylethylenediamine, tetrapropylethylenediamine, tetrabutylethylenediamine, methylaminomethylamine, methylaminoethylamine, methylaminopropylamine, methylaminobutylamine, ethylaminomethylamine, ethylaminoethylamine, ethylaminopropylamine, ethylaminobutylamine, propylaminomethylamine, propylaminoethylamine, propylaminopropylamine, propylaminobutylamine, butylaminomethylamine, butylaminoethylamine, butylaminopropylamine, butylaminobutylamine, pyridine, pyrrole, piperazine, pyrrolidine, piperidine, picoline, morpholine, methylmorpholine, diazabicyclooctane, diazabicyclononane, diazabicycloundecene, and urea.
Examples of the metal chelates include titanium chelate compounds such as triethoxymono(acetylacetonato)titanium, tri-n-propoxymono(acetylacetonato)titanium, triisopropoxymono(acetylacetonato)titanium, tri-n-butoxymono(acetylacetonato)titanium, tri-sec-butoxymono(acetylacetonato)titanium, tri-tert-butoxymono(acetylacetonato)titanium, diethoxybis(acetylacetonato)titanium, di-n-propoxybis(acetylacetonato)titanium, diisopropoxybis(acetylacetonato)titanium, di-n-butoxybis(acetylacetonato)titanium, di-sec-butoxybis(acetylacetonato)titanium, di-tert-butoxybis(acetylacetonato)titanium, monoethoxytris(acetylacetonato)titanium, mono-n-propoxytris(acetylacetonato)titanium, monoisopropoxytris(acetylacetonato)titanium, mono-n-butoxytris(acetylacetonato)titanium, mono-sec-butoxytris(acetylacetonato)titanium, mono-tert-butoxytris(acetylacetonato)titanium, tetrakis(acetylacetonato)titanium, triethoxymono(ethylacetoacetato)titanium, tri-n-propoxymono(ethylacetoacetato)titanium, triisopropoxymono(ethylacetoacetato)titanium, tri-n-butoxymono(ethylacetoacetato)titanium, tri-sec-butoxymono(ethylacetoacetato)titanium, tri-tert-butoxymono(ethylacetoacetato)titanium, diethoxybis(ethylacetoacetato)titanium, di-n-propoxybis(ethylacetoacetato)titanium, disopropoxybis(ethylacetoacetato)titanium, di-n-butoxybis(ethylacetoacetato)titanium, di-sec-butoxybis(ethylacetoacetato)titanium, di-tert-butoxybis(ethylacetoacetato)titanium, monoethoxytris(ethylacetoacetato)titanium, mono-n-propoxytris(ethylacetoacetato)titanium, monoisopropoxytris(ethylacetoacetato)titanium, mono-n-butoxytris(ethylacetoacetato)titanium, mono-sec-butoxytris(ethylacetoacetato)titanium, mono-tert-butoxytris(ethylacetoacetato)titanium, tetrakis(ethylacetoacetato)titanium, mono(acetylacetonato)tris(ethylacetoacetato)titanium, bis(acetylacetonato)bis(ethylacetoacetato)titanium, and tris(acetylacetonato)mono(ethylacetoacetato)titanium; zirconium chelate compounds such as triethoxymono(acetylacetonato)zirconium, tri-n-propoxymono(acetylacetonato)zirconium, triisopropoxymono(acetylacetonato)zirconium, tri-n-butoxymono(acetylacetonato)zirconium, tri-sec-butoxymono(acetylacetonato)zirconium, tri-tert-butoxymono(acetylacetonato)zirconium, diethoxybis(acetylacetonato)zirconium, di-n-propoxybis(acetylacetonato)zirconium, disopropoxybis(acetylacetonato)zirconium, di-n-butoxybis(acetylacetonato)zirconium, di-sec-butoxybis(acetylacetonato)zirconium, di-tert-butoxybis(acetylacetonato)zirconium, monoethoxytris(acetylacetonato)zirconium, mono-n-propoxytris(acetylacetonato)zirconium, monoisopropoxytris(acetylacetonato)zirconium, mono-n-butoxytris(acetylacetonato)zirconium, mono-sec-butoxytris(acetylacetonato)zirconium, mono-tert-butoxytris(acetylacetonato)zirconium, tetrakis(acetylacetonato)zirconium, triethoxymono(ethylacetoacetato)zirconium, tri-n-propoxymono(ethylacetoacetato)zirconium, triisopropoxymono(ethylacetoacetato)zirconium, tri-n-butoxymono(ethylacetoacetato)zirconium, tri-sec-butoxymono(ethylacetoacetato)zirconium, tri-tert-butoxymono(ethylacetoacetato)zirconium, diethoxybis(ethylacetoacetato)zirconium, di-n-propoxybis(ethylacetoacetato)zirconium, diisopropoxybis(ethylacetoacetato)zirconium, di-n-butoxybis(ethylacetoacetato)zirconium, di-sec-butoxybis(ethylacetoacetato)zirconium, di-tert-butoxybis(ethylacetoacetato)zirconium, monoethoxytris(ethylacetoacetato)zirconium, mono-n-propoxytris(ethylacetoacetato)zirconium, monoisopropoxytris(ethylacetoacetato)zirconium, mono-n-butoxytris(ethylacetoacetato)zirconium, mono-sec-butoxytris(ethylacetoacetato)zirconium, mono-tert-butoxytris(ethylacetoacetato)zirconium, tetrakis(ethylacetoacetato)zirconium, mono(acetylacetonato)tris(ethylacetoacetato)zirconium, bis(acetylacetonato)bis(ethylacetoacetato)zirconium, and tris(acetylacetonato)mono(ethylacetoacetato)zirconium; and aluminum chelate compounds such as tris(acetylacetonato)aluminum and tris(ethylacetoacetato)aluminum.
The amount of the catalyst to be used is generally from about 0.0001 to about 1 mol, typically from about 0.001 to about 0.1 mol, per mol of the total amount of the compounds (1) and (2).
In the case where the siloxane compound is a condensate, it typically has a weight-average molecular weight, calculated for standard polystyrene, of from about 500 to about 100,000.
In the invention, the siloxane compound is usually dissolved in an organic solvent and applied as a coating composition.
Examples of the solvent which can be used in the invention include aliphatic hydrocarbon solvents such as n-pentane, isopentane, n-hexane, isohexane, n-heptane, isoheptane, 2,2,4-trimethylpentane, n-octane, isooctane, cyclohexane, and methylcyclohexane; aromatic hydrocarbon solvents such as benzene, toluene, xylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propylbenzene, isopropylbenzene, diethylbenzene, isobutylbenzene, triethylbenzene, diisopropylbenzene, n-amylnaphthalene, and trimethylbenzene; monohydric alcohols such as methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, sec-butanol, t-butanol, n-pentanol, isopentanol, 2-methylbutanol, sec-pentanol, t-pentanol, 3-methoxybutanol, n-hexanol, 2-methylpentanol, sec-hexanol, 2-ethylbutanol, sec-heptanol, heptanol-3, n-octanol, 2-ethylhexanol, sec-octanol, n-nonyl alcohol, 2,6-dimethylheptanol-4, n-decanol, sec-undecyl alcohol, trimethylnonyl alcohol, sec-tetradecyl alcohol, sec-heptadecyl alcohol, phenol, cyclohexanol, methylcyclohexanol, 3,3,5-trimethylcyclohexanol, benzyl alcohol, phenylmethylcarbinol diacetone alcohol, and cresol; polyhydric alcohols such as ethylene glycol, 1,2-propylene glycol, 1,3-butylene glycol, pentanediol-2,4,2-methylpentanediol-2,4, hexanediol-2,5, heptanediol-2,4,2-ethylhexanediol-1,3, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, and glycerol; ketone solvents such as acetone, methyl ethyl ketone, methyl n-propyl ketone, methyl n-butyl ketone, diethyl ketone, methyl isobutyl ketone, methyl n-pentyl ketone, ethyl n-butyl ketone, methyl n-hexyl ketone, diisobutyl ketone, trimethylnonanone, cyclohexanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, diacetone alcohol, acetophenone, and fenchone; ether solvents such as ethyl ether, isopropyl ether, n-butyl ether, n-hexyl ether, 2-ethylhexyl ether, ethylene oxide, 1,2-propylene oxide, dioxolane, 4-methyldioxolane, dioxane, dimethyldioxane, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol diethyl ether, ethylene glycol mono-n-butyl ether, ethylene glycol mono-n-hexyl ether, ethylene glycol monophenyl ether, ethylene glycol mono-2-ethylbutyl ether, ethylene glycol dibutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether, diethylene glycol mono-n-butyl ether, diethylene glycol di-n-butyl ether, diethylene glycol mono-n-hexyl ether, ethoxytriglycol, tetraethylene glycol di-n-butyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, tetrahydrofuran, and 2-methyltetrahydrofuran; ester solvents such as diethyl carbonate, methyl acetate, ethyl acetate, γ-butyrolactone, γ-valerolactone, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, sec-butyl acetate, n-pentyl acetate, sec-pentyl acetate, 3-methoxybutyl acetate, methylpentyl acetate, 2-ethylbutyl acetate, 2-ethylhexyl acetate, benzyl acetate, cyclohexyl acetate, methylcyclohexyl acetate, n-nonyl acetate, methyl acetoacetate, ethyl acetoacetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol mono-n-butyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, dipropyl glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, glycol diacetate, methoxytriglycol acetate, ethyl propionate, n-butyl propionate, isoamyl propionate, diethyl oxalate, di-n-butyl oxalate, methyl lactate, ethyl lactate, n-butyl lactate, n-amyl lactate, diethyl malonate, dimethyl phthalate, and diethyl phthalate; nitrogen-containing solvents such as N-methylformamide, N,N-dimethylformamide, N,N-diethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, N-methylpropionamide, and N-methylpyrrolidone; and sulfur-containing solvents such as dimethyl sulfide, diethyl sulfide, thiophene, tetrahydrothiophene, dimethyl sulfoxide, sulfolane, and 1,3-propanesultone. These solvents can be used alone or as a mixture of two or more thereof.
An organic solvent having a boiling point lower than about 250° C. is typically used in the present invention. Examples thereof include alcohols such as methanol, ethanol, and isopropanol; polyhydric alcohols such as ethylene glycol and glycerol; glycol ether solvents such as ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethyl glycol monoethyl ether, diethylene glycol diethyl ether, propylene glycol monopropoyl ether, and dipropylene glycol monoethyl ether; glycol acetate/ether solvents such as ethylene glycol monomethyl ether acetate, diethylene glycol monobutyl ether acetate, ethylene glycol diacetate, and propylene glycol methyl ether acetate; amide solvents such as N,N-dimethylacetamide, N,N-dimethylformamide, and N-methyl-2-pyrrolidone; ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, acetylacetone, and methyl amyl ketone; and carboxylic ester solvents such as ethyl lactate, methoxymethyl propionate, and ethoxyethyl propionate. These solvents may be used alone or in combination of two or more thereof.
The amount of the organic solvent to be used in the invention is generally from about 0.3 to about 25 times (by weight) the amount of the siloxane compound (in terms of the product of complete hydrolysis and condensation). The coating composition for use in the present invention can be produced by mixing the siloxane compound with an organic solvent together with other ingredients according to need.
Although porous dielectric materials having low dielectric constants are desirable, it would be advantageous to have a porous dielectric material with a higher elastic modulus and material hardness.
In order to raise the elastic modulus of the porous dielectric material, it is exposed to a plasma cure. In accordance with the present invention, the process utilizes a fluorine-free plasma gas. By "fluorine-free" we mean a plasma gas that does not contain fluorine species. For example, the fluorine-free plasma gas can be a combination of CH4 and N2, or CH4 and N2 in combination with H2 or a noble gas such as, for example, He, Ar, Ne, or combinations thereof.
By utilizing a fluorine-free plasma gas, there is no opportunity for fluorine species to react with or penetrate into the porous low-k material. Trapping of such fluorine species in the porous network can lead to voiding, corrosion, and other forms of damage to the dielectric material, which can cause the immediate failure of a device containing such material, as well as affect device yield and/or significantly reduce the useful lifetime of the device. Moreover, unbound fluorine species can move through the dielectric and react with other absorbed or trapped residual compounds, or reach interfaces to other materials within the dielectric causing severe damage. Accordingly, the present invention by employing a fluorine-free plasma gas for curing of the porous dielectric material significantly reduces or eliminates the presence of fluorine species in the film.
The fluorine-free plasma cure can be done by radio frequency (RF), inductive coupled, RF capacitive coupled, helical resinator, microwave downstream, and microwave electron cyclotron resonance (ECR) plasma. The fluorine-free plasma curing process improves the mechanical properties of the porous low-k dielectric material, increasing material hardness while maintaining the dielectric pore, structure, density, and electrical properties.
In a typical fluorine-free plasma curing process, the wafer is quickly heated in a rapid temperature ramp-up step to the desired temperature, and the wafer is plasma cured with a gas mixture comprising CH4 and N2, which generates the curing plasma chemistry. The plasma gas is devoid of any plasma fluorine.
The exact conditions for the fluorine-free plasma cure depend upon what type of plasma cure is being used. Typically, the porous dielectric material is plasma cured at a process pressure between about 1.0 Torr and about 5.0 Torr. Examples of typical microwave plasma cure conditions for a 200 mm wafer are illustrated in Table 1 below.
Typical Fluorine-Free Plasma Cure Conditions for a 200 mm Wafer
Microwave Plasma Power:
Wafer Temperature:
Process Pressure:
1.0-5.0 Torr
Plasma Cure Time:
<180 seconds
Plasma Gasses:
CH4/N2 or CH4/N2/H2
CH4/N2 Flow Rate:
2000-3000 sccm
CH4: N2 Gas Ratio:
0.01 to 0.05
The elastic modulus and material hardness of the fluorine-free plasma cured porous dielectric materials of the present invention are comparable to or higher than those of a furnace (thermally) cured porous dielectric material. The elastic modulus of furnace cured porous dielectric materials is typically between about 0.5 GPa and about 5 GPa when the dielectric constant is between 1.6 and 2.4. The elastic modulus of the fluorine-free plasma cured porous dielectric material of the instant invention is typically greater than or about 3 GPa, and more typically between about 3. GPa and about 10 GPa. The material hardness of furnace cured porous films is between about 0.1 and about 0.8 GPa. Typically, the material hardness of the fluorine-free plasma cured porous dielectric material of the present invention is greater than or about 0.3 GPa, and more typically between about 0.5 GPa and 1.0 GPa.
A comparison of process conditions and material properties for the fluorine-free plasma cure process of the present invention, a fluorine-containing plasma cure process, and a vertical furnace thermal cure process are presented in Table 2 below.
Process Conditions and Material Properties for
Different Cure Conditions
Plasma Cure
Plasma Cure
Thermal Cure
Plasma Cure
Plasma Cure
Pressure (Torr)
Cure Temp. (° C.)
Cure Time (min.)
Plasma Power
3σ (%)
Film Shrink (%)
Constant (k)
Constant at
Delta k
Elastic Modulus
3.82 at 0.20
3.95 at 0.16
3.82 at 0.13
st. dev.
st. dev.
st. dev.
0.62 at 0.02
0.62 at 0.05
0.63 at 0.03
Hardness (GPa)
st. dev.
st. dev.
st. dev.
Table 2 shows fluorine-free plasma cure results in reduced thermal budget. The process time is reduced from 60 minutes for the vertical furnace thermal cure to 2 minutes for the fluorine-free plasma cure, while the temperature is comparable (420° C.). The fluorine-free plasma cured porous dielectric materials of the present invention have comparable chemical stability and improved dimensional stability to the furnace cured materials. By chemical stability, we mean that the fluorine-free porous dielectric materials are resistant to chemicals, such as cleaning solutions and chemical polishing solutions, and plasma damaging during photoresist ashing and dry etching processes.
The fluorine-free plasma cure significantly reduces or eliminates the outgassing of oliomeric polysilica and other substances from the porous films compared to furnace or thermal cured low-k film. In addition, unlike plasma cure processes that utilize a plasma gas comprising fluorine, the fluorine-free plasma cure process of the present invention does not generate a notable amount of polar species in the film. Ordinarily, with such fluorine-based plasma cure processes, the initial plasma curing of the film can introduce chemical and electrical changes that are reversed or repaired by employing a second post-cure plasma treatment to condition the film. However, by employing a fluorine-free plasma gas, the plasma cure process of the present invention defines a single-phase process that cures the film without causing unwanted changes therein. Accordingly, an additional post-cure treatment of the film need not be performed.
While certain representative embodiments and details have been shown for purposes of illustrating the invention, it will be apparent to those skilled in the art that various changes in the compositions and methods disclosed herein may be made without departing from the scope of the invention. Accordingly, it is intended that the invention not be limited to the disclosed embodiments, but that is have the full scope permitted by the language of the following claims.
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|Citing Patent
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|U.S. Classification
|International Classification
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|Aug 18, 2003
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text:
Debbie simply ADORES people and she loves giving kisses and cuddling. She likes carrying her soft toys around and is just so grateful to receive attention--she greets everyone smiling and happy, her tail softly wagging.
No dogs, no cats. Debbie does not do well with other dogs, therefore we need to find a home with an experienced dog owner and where Debbie can be the only dog in the family. Debbie would enjoy a yard, but no cats please.
Seeking a home without school-aged children please.
Do get in touch about meeting Debbie, you will be won over by how special she is. Debbie is spayed, house trained, and up to date on her vaccinations.
To meet Debbie, please contact: email@example.com (also our Paypal donation email address)
We are currently seeking grants, donors and sponsors to purchase the animal sanctuary and education center we have found for the Nature Network in the Valley area of Los Angeles.
We are preparing to again produce and host a previously award winning television show about the rescue and protection of domestic and wild animals and preservation of natural habitats.
More information to come soon. Our website, www.thenaturenetwork.org is currently under re-design, and will be up and active soon.
Thank You!
Your message has been sent to The Nature Network, Inc..
You'll receive a copy, too, at to help you keep track of which pets you've inquired about, and which shelters and rescues you've emailed.
NOTE: Some shelters have physical locations you can visit; some of these shelters may only have pets for a limited time, so please do not wait for a reply—just go visit the shelter! Other organizations are rescue groups run by busy volunteers who may take a while to reply. You can find information about the shelter or rescue group caring for this pet, and their adoption procedures, on the pet's details page on Adopt-a-Pet.com.


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Your search for "ss18l2" returned 20 TaqMan® SNP Genotyping Assays
SS18 like 2
Synovial sarcomas occur most frequently in the extremities around large joints. More than 90% of cases have a recurrent and specific chromosomal translocation, t(X;18)(p11.2;q11.2), in which the 5-prime end of the SS18 gene (MIM 600192) is fused in-frame to the 3-prime end of the SSX1 (MIM 312820), SSX2 (MIM 300192), or SSX4 (MIM 300326) gene. The SS18L2 gene is homologous to SS18.[supplied by OMIM, Jul 2002]
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IT Associate
San Francisco , California
October 26, 2016
Title IT Associate City San Francisco State CA Position Description The Associate is responsible for complete information technology support including but not limited to company desktops, laptops, tablets, mobile devices, servers, and infrastructure. A qualified candidate must be articulate, possess excellent communication, time management, and prioritization skills, and be confident in solving a variety of technology issues. Primary Responsibilities include: • Company systems support, including but not limited to deployment, upgrades and support to Microsoft Windows, OS X, iOS, and core infrastructure and server technologies. • Application support of Microsoft Office suite and various other packages. • Mobility, networking, virtualization, and telephony support. • Documentation of systems configuration, installation and daily procedures. Team Responsibilities: • Provide technical assistance and support for incoming queries and issues related to computer systems, software, and hardware. • Monitor, respond, and resolve problems submitted to the IT Service Desk, within service level agreements, to the end user's satisfaction. • Audio/Visual conferencing including setup, configuration, and troubleshooting. • Participation in planning, troubleshooting, and status meetings. • Research and recommendation on emerging technologies. • Dynamic work hours including 24/7 on-call support availability with rotating primary/backup. Requirements Skills, Experience, and Education Candidates must demonstrate experience in the deployment and support of information technology, excellent communication skills, and a desire to work in high-energy, goal-oriented financial environment. The candidate must be extremely professional and possess the ability to synthesize and communicate thoughts and ideas to executive management succinctly. The position requires the ability to manage multiple assignments simultaneously, anticipate required activities/tasks, and work according to changing priorities and deadlines. Important skills also include: attention to detail, understanding of prioritization, self-motivation, and time management skills. Qualified candidates must have a minimum of four years of college, resulting in a bachelors or equivalent degree, and two or more years of professional experience in IT systems support.
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Founded in 1948, Robert Half (NYSE: RHI) is the world's first and largest specialized staffing services firm.
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text:
Patriots' Belichick is overwhelming choice
New England's coach leads team to win their final 12 games.
Published: Sunday, January 4, 2004 at 6:01 a.m.
Last Modified: Sunday, January 4, 2004 at 12:28 a.m.
Bill Belichick owns three Super Bowl titles, and after leading the New England Patriots in his best coaching job, he was honored Saturday as The Associated Press NFL Coach of the Year.
In a year of masterful coaching throughout the league, Belichick led the Patriots to the NFL's best record, 14-2. The Patriots, fighting off injuries almost from the outset of the schedule, won their final 12 games, setting franchise records for winning streak and victories in one year.
They did so in great part because of Belichick's brilliance as a game-planner, motivator and in-game strategist.
``I am honored to accept this award as recognition of the tremendous work of our entire coaching staff, personnel department and Mr. Kraft,'' Belichick said. ``Coaching is always a collective effort that depends on the assistant coaches' preparation and direction and the players' performance on the field. More than anything, it was the players' exceptional resiliency, toughness and execution under pressure that allowed us to have a successful regular season.''
The Patriots succeeded with a variety of starting lineups, unusual for a championship- caliber team.
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|Message view
|« Date » · « Thread »
|« Date » · « Thread »
|"Rick Hillegas (Updated) (JIRA)" <j...@apache.org>
|[jira] [Updated] (DERBY-5488) Add remaining JDBC 4.1 bits which did not appear in the Java 7 javadoc.
|Fri, 04 Nov 2011 19:49:52 GMT
[ https://issues.apache.org/jira/browse/DERBY-5488?page=com.atlassian.jira.plugin.system.issuetabpanels:all-tabpanel ] Rick Hillegas updated DERBY-5488: --------------------------------- Attachment: z.java derby-5488-04-aa-fixBigIntegerDecimal.diff Attaching derby-5488-04-aa-fixBigIntegerDecimal.diff. This patch is not ready for commit yet because there is still a problem in ParameterMappingTest on CDC/FP 1.1. This patch gets rid of the NPE. It does this by moving some logic out of the data factory into SQLDecimal and by implementing some more methods in the small device version of SQLDecimal, which is called BigIntegerDecimal. I don't think this is the correct long term fix. The correct long term fix is for our small device implementation to use SQLDecimal and to get rid of BigIntegerDecimal. This ought to be possible because java.math.BigDecimal is in CDC/FP 1.1 (it wasn't in the earlier version of CDC/FP on which our small device implementation was based originally). However, I think that there may be some deserialization and upgrade issues for legacy databases which have stored BigIntegerDecimals. Fixing those issues seems to me to be the province of another JIRA. After clearing away the current problems with ParameterMappingTest, the test trundles along and hits a new problem: a failure on small devices to resolve a procedure which has BINARY argument types. I have attached a program, z.java, which shows this problem. The program runs fine on JDK 6 but fails on OJEC. > Add remaining JDBC 4.1 bits which did not appear in the Java 7 javadoc. > ----------------------------------------------------------------------- > > Key: DERBY-5488 > URL: https://issues.apache.org/jira/browse/DERBY-5488 > Project: Derby > Issue Type: Improvement > Components: JDBC, SQL > Affects Versions: 10.9.0.0 > Reporter: Rick Hillegas > Assignee: Rick Hillegas > Attachments: JDBC_4.1_Supplement.html, derby-5488-01-aa-objectMappingAndConversion.diff, derby-5488-02-aa-fixBigInteger.diff, derby-5488-03-ac-moveDecimalSetterGetterAndTest.diff, derby-5488-04-aa-fixBigIntegerDecimal.diff, z.java > > > In addition to the JDBC 4.1 bits which were visible in the Java 7 javadoc, a couple other items appear in the JDBC 4.1 Maintenance Review spec. This spec has been published on the JCP website at http://download.oracle.com/otndocs/jcp/jdbc-4_1-mrel-eval-spec/index.html. I will attach a functional spec for the remaining bits. -- This message is automatically generated by JIRA. If you think it was sent incorrectly, please contact your JIRA administrators: https://issues.apache.org/jira/secure/ContactAdministrators!default.jspa For more information on JIRA, see: http://www.atlassian.com/software/jira
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text:
Honda Motorcycle and Scooter India has promised to launch several new products in the market during 2015. Most of these include updates to their current products to keep them fresh and attractive.
On 10th of July, 2015 they will be introducing their all-new Livo motorcycle. This motorcycle will replace their slow seller, the CB Twister in the Indian market, and is expected to attract new buyers.
The Japanese based manufacturer will sell its Livo as their premium commuter offering in the country. It will be placed above the Dream series of motorcycle sold by Honda in India.
The Livo is most likely to have the following specifications:
- Engine: 110cc single cylinder, air-cooled
- Horsepower: 9
- Torque: 8.5 Nm
- Gearbox: 4-speed
In terms of design, the Livo will borrow cues from both Twister as well as Dream series motorcycles. Honda designers will provide a sharper and more aggressive looking commuter bike.
Honda will pit its Livo premium commuter against Hero MotoCorp Passion Pro, Mahindra Centuro and TVS Star City+ models. In pricing terms, it will be positioned aggressively under INR 55,000 ex-showroom.


text:
What is JotForm?
JotForm is a free online form builder which helps you create online forms without writing a single line of code. No sign-up required.
At JotForm, we want to make sure that you're getting the online form builder help that you need. Our friendly customer support team is available 24/7.
We believe that if one user has a question, there could be more users who may have the same question. This is why many of our support forum threads are public and available to be searched and viewed. If you'd like help immediately, feel free to search for a similar question, or submit your question or concern.
Text in form not displaying correctly in Chrome.Asked by olpevents on March 10, 2016 at 10:12 AM
Text in form not displaying correctly in Chrome. Works fin in Firefox and Explorer.
JotForm Support
The texts are good. This is how I see it in the popup form:
You have embedded the form into a modal window. Is it fixed now? If not, then you may need to restore your Windows Aero settings. You are using Windows Basic and I think you've also unchecked the Windows texts visualization.
what/where is windows texts visualization? Is that in my browser settings or the jot form?
JotForm Support
In your Windows 7 PC settings. I meant to say the Visual Effects in your Windows Aero settings.
Here's the guide. Please try to choose the first option.
I do not have aero option. Also, if the default is "...whats best for my computer" that means everyone also sees what I am seeing.
Do I need to adjust my fonts in jotform?
JotForm Support
You may try increasing a bit the font size, it might display the text properly.
However, I did check your form and I was able to see it properly.
Is the issue still there?
If so. Could you try loading your form on other PC?
Do let us know if it is working now.


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Last weekend
With my friends
Hockey Game!
Last weekend, My friends and I went to watch a hockey game in Fort William Gardens. I have watched this game just in the TV, so, I enjoyed my first time there. It was interesting, because hockey is a popular game in Canada as soccer is in Brazil. The people were excited and I too!In the end, the home team Lu Thunderwolver won Concordia Stinger and I was happy because I wanted it!
However, the weekend haven't been finished!On Saturday, we went "Crocks", a nightclub. I liked it because everybody danced very well, it was excited! hahaha :D


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School open
Sandstone Academy
General Delivery
Ladle Cove, NL
Telephone: 670-3201
Facsimile: 670-2146
School has no active Twitter Account.
English School District
central Regional Office
203 Elizabeth Drive
Gander, NL A1V 1H6
Tel: (709) 256-2547
Fax: (709) 651-3044
- District Staff Directory
- central Region Staff Directory
- District School Directory
- central Region School Directory
No information given.
Region: central
Regional Zone: nova central
Trustee Zone: 9
Grade Level: Kindergarten - Grade 6
Dept ID: 188
Dismissal Time: 3:00pm
Kindergarten Times:
8:45am - 12:00pm
1:15pm - 3:15pm
Accessible School: NO
French Immersion: NO
carolyn goodyear
Assistant Principal: NA
Secretary(s): Rosalind Tulk
School Email:
maria antle
Student Support: Margaret Buffett
Regional SEOs
District SEOs
Regional Student Support
District Student Support
Click on the name/link above to view contact information.
To determine if your child is within this school's student attendance zone, please use the catchment map below or use the link in General Information above for catchment. For bus route information, pelase refer to the Bus Route document link.
If you have any questions or concerns, please contact Ms. Carla Bradley, GIS Specialist, at 709-758-2358 or email email@example.com.
NOTE: If your school has no bus route information indicated here, please refer to the Student Transportation page.
No School News stories found for Sandstone Academy.
Have a School News Story for Sandstone Academy? Please submit to firstname.lastname@example.com.


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Taylor 310M Limited Ed Acoustic Guitar
This guitar is no longer for sale (sold on 2007-12-11)
Price : US $945.00
Taylor 310M, 25th. Anniversary Limited Edition. I don't know for sure but from what I've gathered, only 400 of these were built. All mahogany construction, it has a tone and warmth words can't describe. Neck is straight & true with plenty of fret life left. Body is almost perfect and 100% beautiful. Original hard shell case and Taylor neck tool included. Just restrung with Exilers. Here's a chance to own 1 of 400 collectible Taylors that you can admire and enjoy playing. Insurance is included with shipping. I added a picture of ser. # tag. It was built in 1999. Go to www.taylorguitars.com/guitars/reference/dating.html The serial # is 990902003. NO RESERVE. FREE FREIGHT WITH BUY IT NOW!!!
This guitar is sold (sold on 2007-12-11)
Post a comment on Taylor 310M Limited Ed Acoustic Guitar :


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Need to get blood tests in River Oaks, TX? Simply order online and get blood tests done at a lab in River Oaks, TX (Find More Locations):
How much does it cost to Get Blood Test?
Our prices to Get Blood Test include the doctor's order that you need to get tested in River Oaks, TX, all lab fees and taxes, and a pdf copy of your results. To get started, CLICK HERE.
What does a test report look like if I Get Blood Test through you?
For a sample report of one of our panels you can get, please CLICK HERE.
In a time of rising healthcare costs, we are delighted to help patients Get Blood Test in River Oaks, TX.
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Dr. Debra Doubek-Phillips MD
- Family Medicine Manhattan, KS
Patient Reviews
Reviews reflect patients' level of satisfaction with the care they received from this provider. Dr. Debra Doubek-Phillips xhas an overall rating of 4.6.
Dr. Debra Doubek-Phillips, MD is a Doctor primarily located in Manhattan, KS, with other offices in Manhattan, KS and Manhattan, KS (and 1 other location). She has 30 years of experience. Her specialties include Family Medicine. Dr. Doubek-Phillips is affiliated with Via Christi Hospital in Manhattan. She speaks English.
Find out the languages this doctor/ or staff may speak.
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Learn where this doctor attended medical school.
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Specialties & Expertise
Dr. Debra Doubek-Phillips has the following 10 areas of expertise and 1 specialty.
Family Medicine
A family practitioner is a doctor who specializes in caring for people of all ages, at all stages of life. Rather than focusing on the treatment of one disease or patient population, family practitioners are often the doctors that people see for their everyday ailments, like cold and flu or respiratory infections, and health screenings. When necessary, family practitioners will provide referrals for conditions that require the expertise of another specialist.
The doctors may also provide physicals, inoculations, prenatal care, treat chronic diseases, like diabetes and asthma, and provide advice on disease prevention.
See areas of expertise for treating specific conditions, procedures and surgeries for this doctor.
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Health Guides
Type 2 Diabetes
Type 2 diabetes is a chronic disease in which your body is unable to maintain a normal blood sugar (glucose) level.
Locations & Directions
Nearby Doctors
Dr. Debra Doubek-Phillips, MD is similar to these 3 Doctors near Manhattan, KS.


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It's been a while since the last post, so I'll break the silence with a video recently uploaded to YouTube by African Shark Eco Charters. This is raw footage and it is not in slow motion. It gives one a sense of the speed at which both shark and seal are moving, and is a nice departure from the sequences that can often seem common. Unfortunately, it's curtains for the seal. Enjoy.
White Shark Predation | False Bay, South Africa
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NASA released a plan for safely keeping a crew aboard the International Space Station without the help of the remaining three space shuttles, grounded until at least next fall.
In an 84-page report, the agency pointed out the need for more and better inspections of space station wiring, equipment and outside surfaces, and improved shielding against space debris. NASA said all these issues were being addressed.
So far, space station officials have found five pieces of equipment that pose an unacceptable risk: a power-distribution box that failed its vibration requirements, a robot-arm workstation with wiring that was smaller than specified, and problems with a radiator, heart defibrillator and ammonia fixture.
Visiting space shuttles routinely photograph the exterior of the space station. But with the shuttles grounded, NASA has become worried that outside damage, like loose panels, aging equipment and holes left by space junk, could go undetected.
As a result, the National Aeronautics and Space Administration has begun using cameras on the station to examine the outside. But blind spots exist in remote corners, and the space agency said it might seek observations from satellites or spacewalking astronauts.
There are no plans for now to send the two station residents out on a spacewalk solely for an inspection. NASA also has no intention, at least right now, of resurrecting a robot intended to inspect the station. The project was sidelined a few years ago for fear of a collision.Continue reading the main story
NASA is working with the Russian space agency to speed work on additional shielding for the station's Russian-built living quarters. Some of the work began well before the Columbia space shuttle disaster.
Because the shielding has to be delivered to the space station, the installation job almost certainly cannot be finished until shuttle flights resume.
Thorough checks will also be conducted on internal wiring. Some components of the station have been in orbit for five years.Continue reading the main story


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Two ingredients results in pure heaven. This dairy free chocolate mousse needs nothing more than good quality chocolate and eggs. Always perfect!
You might be tempted, but do not add any other ingredients. No water, no butter, no sugar.
Very easy, I use 3 egg yolks I/of 6 in the melted choc and its our family favourite recipe - 01 Nov 2012
is'nt this only dairy free if you use dairy free dark chocolate?! - 19 Aug 2012
Just like my grandma used to make! I think prep time is a bit longer for me, I like to fold in the egg whites spoon by spoon, gently. I also add grated roasted hazelnuts for decoration and that extra sensory enjoyment - 25 Oct 2015


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|Message view
|« Date » · « Thread »
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|André Warnier ...@ice-sa.com>
|Re: Compressed SVG support (*.svgz) in Tomcat
|Sun, 29 Dec 2013 22:54:03 GMT
David Law wrote: > Hi André, > > no. I think Chris was semantically correct with > "[big enough to exceed your file size]" > > Unfortunately, his answer had nothing to do with my posting. > > Mark Thomas hit the nail on the head though: > http://tomcat.markmail.org/message/zptxhevgzkpr7if2 > You are right, that was hasty of me. Chris was in fact talking about an alternative : having the files stored /not/ compressed, and let Tomcat do the compression. And I mixed it all up further, thinking of Tomcat only compressing the non-compressed files (supposedly larger), and leaving the compressed ones (supposedly smaller) alone. Neither of which matched your request. --------------------------------------------------------------------- To unsubscribe, e-mail: email@example.com For additional commands, e-mail: firstname.lastname@example.com
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The Henderson-Massey Local Board area is at the western end of the Waitemata Harbour. It includes Te Atatu Peninsula, West Harbour, Westgate, Ranui, Massey, Henderson and Glendene.
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Contact details for your local board and its members.
Information about engaging with the Henderson-Massey Local Board.
Find out more about plans for your area.
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Help make Auckland the best place inthe world to work, play, study and invest.


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Tooth Fairy in Dentist's Office Is the Sweetest Prank Ever
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Well, here's a way to make those dreaded visits to the dentist more fun.
In this delightful prank, children are surprised when the Tooth Fairy visits them while they wait in the dentist's office. She's not there to collect teeth and leave money, though. Nope, she's on hand to magically clean the kids' teeth.
Safe to say the lollipops the kids got on the way out was the second biggest highlight of their visits.


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If you haven't already, sign up today for the HP DemoFriday on June 12th at 10:00am PT and learn all about HP SDN Applications!
In this DemoFriday, we'll look at HP's software-defined networking (SDN) strategy and how it provides customers a programmable network that is aligned for business applications. HP runs a full SDN service that offers coverage to ongoing support, training, and certification for:
- Assessment
- Analysis
- Validation
- Integration
- Implementation
It's not just HP's SDN applications that will be covered, but their SDN ecosystem as well. HP's SDN ecosystem includes the HP VAN SDN Controller and a Software Development Kit that allows developers to create SDN applications. HP also provides its SDN App Store as a place for developers and partners to share their applications and innovations, as well as allows for customers to purchase SDN applications.
One app that can be found in the SDN App Store is the HP Network Visualizer SDN Application. This app provides real-time traffic capture with immediate detailed network monitoring that allows for fast network diagnosis, verification, and transition from the first recorded incident to being fixed.
Like what you hear? Then join us June 12th at 10:00am PT and listen to HP explain how to boost optimization and visibility with HP SDN applications!