text:
|Publication number
|Publication type
|Application number
|Publication date
|Sep 6, 2011
|Filing date
|Jan 13, 2010
|Priority date
|Sep 14, 2006
|Fee status
|Also published as
|Publication number
|Mark Fischer, Stephen Russell, H. Montgomery Manning
|Original Assignee
|Micron Technology, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (169), Non-Patent Citations (15), Referenced by (13), Classifications (8), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a continuation of U.S. patent application Ser. No. 11/521,851 to Fischer et al., EFFICIENT PITCH MULTIPLICATION PROCESS, filed Sep. 14, 2006.
This application is related to the following: U.S. patent application Ser. No. 10/934,778 to Abatchev et al., Method for Integrated Circuit Fabrication Using Pitch Multiplication, filed Sep. 2, 2004; U.S. patent application Ser. No. 10/931,771 to Tran et al., Methods for Increased Photo Alignment Margins, filed Aug. 31, 2004; U.S. patent application Ser. No. 11/214,544 to Tran et al., Pitch Reduced Patterns Relative To Photolithography Features, filed Aug. 29, 2005; U.S. patent application Ser. No. 11/366,212 to Werner Juengling, Process Flow for Vertical Transistor Arrays, filed Mar. 2, 2006; and U.S. patent application Ser. No. 11/367,020 to Werner Juengling, Masking Process For Simultaneously Patterning Separate Regions, filed Mar. 2, 2006. The entireties of each of these references are incorporated by reference herein.
1. Field of the Invention
This invention relates generally to integrated circuit fabrication and, more particularly, to masking techniques.
2. Description of the Related Art
As a consequence of many factors, including demand for increased portability, computing power, memory capacity and energy efficiency, integrated circuits are continuously being reduced in size. The sizes of the constituent features that form the integrated circuits, e.g., electrical devices and interconnect lines, are also constantly being decreased to facilitate this size reduction.
The trend of decreasing feature size is evident, for example, in memory circuits or devices such as dynamic random access memories (DRAMs), flash memory, static random access memories (SRAMs), ferroelectric (FE) memories, etc. To take one example, DRAM typically comprises millions of identical circuit elements, known as memory cells. A DRAM memory cell typically consists of two electrical devices: a storage capacitor and an access field effect transistor. Each memory cell is an addressable location that can store one bit (binary digit) of data. A bit can be written to a cell through the transistor and can be read by sensing charge in the capacitor. By decreasing the sizes of the electrical devices that constitute a memory cell and the sizes of the conducting lines that access the memory cells, the memory devices can be made smaller. Additionally, storage capacities can be increased by fitting more memory cells on a given area in the memory devices. Other memory designs can integrate access and storage devices or omit access devices (e.g., cross-point MRAM, PCRAM, etc.).
The continual reduction in feature sizes places ever greater demands on the techniques used to form the features. For example, photolithography is commonly used to pattern features, such as conductive lines. The concept of pitch can be used to describe the sizes of these features. Pitch is defined as the distance between an identical point in two neighboring features of a repeating pattern. These features are typically defined by spaces between adjacent features, which spaces are typically filled by a material, such as an insulator. As a result, pitch can be viewed as the sum of the width of a feature and of the width of the space on one side of the feature separating that feature from a neighboring feature. However, due to factors such as optics and light or radiation wavelength, photolithography techniques each have a minimum pitch below which a particular photolithographic technique cannot reliably form features. Thus, the minimum pitch of a photolithographic technique is an obstacle to continued feature size reduction.
"Pitch doubling" or "pitch multiplication" is one proposed method for extending the capabilities of photolithographic techniques beyond their minimum pitch. A pitch multiplication method is illustrated in
While the pitch is actually halved in the example above, this reduction in pitch is conventionally referred to as pitch "doubling," or, more generally, pitch "multiplication." Thus, conventionally, "multiplication" of pitch by a certain factor actually involves reducing the pitch by that factor. The conventional terminology is retained herein.
Because the layer 50 of spacer material typically has a single thickness 90 (see
Accordingly, there is a need for methods of forming features of different sizes, especially where some features are formed below the minimum pitch of a photolithographic technique, and especially in conjunction with pitch multiplication.
The invention will be better understood from the Detailed Description of the Preferred Embodiments and from the appended drawings, which are meant to illustrate and not to limit the invention, and wherein:
Because of the difference in size between pitch multiplied features and larger features such as non-pitch multiplied features, connecting pitch multiplied features to the larger features can be difficult. For example, the pitch multiplied features are typically too small and/or closely spaced to reliably contact features such as contact plugs or larger sized interconnects. Shorting or other misalignments can occur because of the small size and/or close spacing of the pitch multiplied features. Various strategies have been proposed for forming pitch multiplied and non-pitch multiplied features. Exemplary methods for forming pitch multiplied and non-pitch multiplied features are described in U.S. patent application Ser. No. 10/934,778 to Abatchev et al. and U.S. patent application Ser. No. 10/931,771 to Tran et al., both of which are assigned to the assignee of the present application. The entire disclosures of each of these references are incorporated by reference herein.
In addition to difficulties with forming and connecting pitch multiplied and non-pitch multiplied features, the process flows can be complicated, due to the need to form and overlay features of different sizes. For example, the pitch multiplied features can be formed separately from the larger sized features, thereby requiring multiple mask formation and mask consolidation steps. It will be appreciated that each additional step in a process flow can undesirably add to the complexity and expense of a process flow. Moreover, each additional step has the possibility of introducing misalignments and etch and pattern transfer complications and other errors which can cause undesirable variations in process results.
In view of these difficulties, preferred embodiments of the invention allow for the formation and connection of pitch multiplied and non-pitch multiplied features using an advantageously simple process flow. Preferably, parts of a selectively definable layer (e.g., a photoresist layer) corresponding to the array, interface and periphery areas of an integrated circuit are simultaneously patterned. Pitch multiplication is used to form pitch multiplied spacers in the array region. At least some parts of the interface and the periphery regions are protected using a protective material while other parts are etched and free-standing spacers are formed in the array region. The protective material is then removed and a pattern including spacers in the array region and features in the interface and the periphery regions are then transferred to a hard mask layer. The hard mask layer can be used to pattern an underlying substrate.
Advantageously, processing according to the preferred embodiments allows for the formation and connection of pitch-multiplied to non-pitch multiplied features using relatively few process steps. The relatively small number of steps can improve the uniformity of process results. Non-uniformities introduced by additional pattern formation and pattern transfer steps can be reduced. Moreover, as discussed herein, because connections of non-pitch multiplied mask elements to pitch multiplied mask elements can be formed simultaneously on the same vertical level with the non-pitch multiplied mask elements, defects caused by misaligning separately formed mask elements can be reduced. Thus, connections to pitch multiplied features can be formed more reliably, thereby reducing the possibility of shorts and poorly connected pitch-multiplied features. In addition, the relatively low number of process steps advantageously allows for the fabrication of integrated circuits with high throughput and relatively low cost.
Reference will now be made to the Figures, wherein like numerals refer to like parts throughout. It will be appreciated that these Figures are not necessarily drawn to scale.
Initially, a stack of layers suitable for forming a pattern in a hard mask layer is formed.
With reference to
With continued reference to
On the other hand, the periphery 106 typically comprises features larger than those in the array 102. Conventional photolithography, rather than pitch multiplication, is preferably used to pattern features, such as logic circuitry, in the periphery 106, because the geometric complexity of logic circuits located in the periphery 106 makes using pitch multiplication difficult. For example, features in the periphery 106 typically do not have the repeating regularity of features typical in the array 102. Moreover, the logic area need not be as dense as the array regions 102, such that pitch multiplication in the logic area is unnecessary. In contrast, the regular grid typical of array patterns is conducive to pitch multiplication. In addition, some devices in the periphery require larger geometries due to electrical constraints, thereby making pitch multiplication less advantageous than conventional photolithography for such devices.
The interface region 104 can contain both array and periphery features. For example, the interface region 104 can serve as a transition from the array 102 to the periphery 106 and allow contact between features in the array 102 and features in the periphery 106.
While schematically illustrated as concentric regions, it will be appreciated by the skilled artisan that the relative positions, and the number of array 102, interface 104 and periphery 106 regions in the integrated circuit 100 may vary from that depicted. For example, in some areas of the integrated circuit 100, the interface 104 and periphery 106 regions may be disposed directly with either side of the array region 102, as illustrated in some of the figures below. Moreover, while certain specific characteristics of these regions have been noted above and clear demarcations between the regions have been illustrated for ease of discussion, in some arrangements, two or more of the regions can overlap.
The materials for the layers 120-150 overlying the substrate 110 are preferably chosen based upon consideration of the chemistry and process conditions for the various pattern forming and pattern transferring steps discussed herein. Because the layers between a topmost selectively definable (e.g., photodefinable) layer 120 and the substrate 110 preferably function to transfer a pattern derived from the selectively definable layer 120 to the substrate 110, the layers 130-150 between the selectively definable layer 120 and the substrate 110 are preferably chosen so that they can be selectively etched relative to other exposed materials. It will be appreciated that a material is considered selectively, or preferentially, etched when the etch rate for that material is at least about 2-3 times greater, preferably at least about 10 times greater, more preferably at least about 20 times greater and, most preferably, at least about 50 times greater than that for surrounding materials. Because a goal of the layers 120-140 overlying a second hard mask layer 150 is to allow well-defined patterns to be formed in the second hard mask layer 150, it will be appreciated that one or more of the layers 120-140 can be omitted or substituted if suitable other materials, chemistries and/or process conditions are used.
In the illustrated embodiment, the selectively definable layer 120 overlies a first hard mask, or etch stop, layer 130, which overlies a temporary layer 140, which overlies the second hard mask, or etch stop, layer 150, which overlies the substrate 110 to be processed (e.g., etched) through a mask. Preferably, the mask through which the substrate 110 is processed is formed in the second hard mask layer 150.
With continued reference to
The material for the first hard mask layer 130 preferably comprises an inorganic material. Exemplary materials include silicon oxide (SiO2), silicon or a dielectric anti-reflective coating (DARC), such as a silicon-rich silicon oxynitride. In the illustrated embodiment, the first hard mask layer 130 is a dielectric anti-reflective coating (DARC). Using DARCs for the first hard mask layer 130 can be particularly advantageous for forming patterns having pitches near the resolution limits of a photolithographic technique. The DARCs can enhance resolution by minimizing light reflections, thus increasing the precision with which photolithography can define the edges of a pattern.
The temporary layer 140 is preferably formed of amorphous carbon, which offers very high etch selectivity relative to the preferred hard mask materials. More preferably, the amorphous carbon is a form of amorphous carbon that is highly transparent (so-called "transparent carbon") to light and that offers improvements for photo-alignment by being transparent to the wavelengths of light used for such alignment. Deposition techniques for forming such transparent carbon can be found in A. Helmbold, D. Meissner, Thin Solid Films, 283 (1996) 196-203, the entire disclosure of which is incorporated herein by reference.
The second hard mask layer 150 can be formed of a hard mask material suitable for etching the underlying substrate 110 and which can be selectively etched relative to exposed overlying materials, such as spacers 165 (
It will be appreciated that the substrate 110 can include a layer of a single material, a plurality of layers of different materials, a layer or layers having regions of different materials or structures in them, etc. These materials can include semiconductors, insulators, conductors, or combinations thereof. For example, the substrate can comprise doped polysilicon, an electrical device active area, a silicide, or a metal layer, such as a tungsten, aluminum or copper layer, or combinations thereof. In some embodiments, the mask elements discussed below can directly correspond to the desired placement of conductive features, such as interconnects or landing pads, in the substrate. In the illustrated embodiment, the upper portion of the substrate 110 includes an insulator and the location of mask elements can correspond to the desired location of insulators, such as in damascene metallization. Examples of structures formed in the substrate include interconnects, gate stacks and shallow trench isolation structures.
The layers 120-150 discussed herein can be formed by various methods. For example, spin-on-coating processes can be used to form photodefinable layers. Various vapor deposition processes, such as chemical vapor deposition, can be used to form hard mask layers. Preferably, a low temperature chemical vapor deposition (CVD) process is used to deposit the hard mask layers or any other materials, e.g., spacer material, over the temporary layer 140, especially in cases where the temporary layer 140 is formed of amorphous carbon.
The amorphous carbon for the temporary layer 140 can be formed by chemical vapor deposition using a hydrocarbon compound, or mixtures of such compounds, as carbon precursors. Exemplary precursors include propylene, propyne, propane, butane, butylene, butadiene and acetelyne. A suitable method for forming amorphous carbon layers is described in U.S. Pat. No. 6,573,030 B1, issued to Fairbairn et al. on Jun. 3, 2003, the entire disclosure of which is incorporated herein by reference. In addition, the amorphous carbon may be doped. A suitable method for forming doped amorphous carbon is described in U.S. patent application Ser. No. 10/652,174 to Yin et al., the entire disclosure of which is incorporated herein by reference.
Next, patterns are formed and transferred to the hard mask layer 150.
It will be appreciated that in any of the steps described herein, transferring a pattern from an overlying level to an underlying level involves forming integrated circuit features or mask elements in the underlying level that generally correspond to mask elements in the overlying level. For example, the path of lines in the underlying level will generally follow the path of lines in the overlying level and the location of other elements or features in the underlying level will correspond to the location of similar elements or features in the overlying level. The precise shapes and sizes of elements or features can vary from the overlying level to the underlying level, however. For example, depending upon etch chemistries and conditions, the sizes of and relative spacing between the elements or features forming the transferred pattern can be enlarged or diminished relative to the pattern on the overlying level, while still resembling the same initial "pattern," as can be seen from the example of shrinking the first resist mask in the embodiments described below. Thus, even with some changes in the dimensions of elements or features, the transferred pattern is still considered to be the same pattern as the initial pattern. In contrast, forming spacers around mask elements can form new (pitch multiplied) patterns.
With reference to
The pitch of the lines 124 is equal to the sum of the width of a line 124 and the width of a neighboring space 122. To minimize the critical dimensions of elements formed using this pattern of lines 124 and spaces 122, the pitch can be at or near the limits of the photolithographic technique used to pattern the photodefinable layer 120. For example, for photolithography utilizing 248 nm light, the pitch of the lines 124 can be about 100 nm. Thus, the pitch may be at the minimum pitch of the photolithographic technique and the spacer pattern discussed below can advantageously have a pitch below the minimum pitch of the photolithographic technique. Alternatively, because the margin of error for position and element size typically increases as the limits of a photolithographic technique are approached, the lines 124 can be formed having larger element sizes, e.g., for a pitch of about 200 nm, to minimize errors in the position and sizes of the lines 124.
With reference to
The pattern transfer may be accomplished in a single step; that is, in situ in a single process chamber. The transfer is preferably accomplished using anisotropic etches. Preferred etch chemistries include an etch using fluorocarbon plasma, e.g., plasma generated from HBr/CF4, to etch the first hard mask layer 130 and an oxygen-containing plasma, e.g., a SO2/O2 plasma, to etch the temporary layer 140. The etches selectively etch the first hard mask layer 130 relative to the photodefinable layer 120 and then continue through the temporary layer 140, stopping at the second hard mask layer 150. Part of the photodefinable layer 120 may be etched during the pattern transfer. Any remaining resist forming the photodefinable layer 120 can subsequently be separately removed by various processes known by the skilled artisan, including, e.g., by plasma ashing.
With reference to
With reference to
Preferred methods for spacer material deposition include chemical vapor deposition and atomic layer deposition. The thickness of the layer 160 is preferably determined based upon the desired width of the spacers 165 (
With reference to
With reference to
With reference to
In addition, elements in the interface areas 104 or periphery 106 can also be patterned, thereby forming, for example, a void 174 in the periphery. It will be appreciated that while the spacers 165 in the array 102 preferably have a pitch or element size smaller than the minimum pitch or resolution of the photolithographic technique used in forming it, elements patterned in the layer 170 preferably have a pitch or element size equal to or greater than the minimum pitch or resolution of the photolithographic technique used to form them.
With reference to
It will be appreciated that some elements of the partially fabricated integrated circuit 100 remain protected by the layer 170. In such cases, spacers 165 augment the dimensions of these elements, after removal of the protective layer 170.
With reference to
Thus, the mandrels 134 a (
With reference to
The substrate can subsequently be processed through the mask defined in the second hard mask layer 150. For example, with reference to
Preferably, the substrate 110 is etched using an anisotropic etch selective for the substrate 110 relative to at least the second hard mask layer 150. It will be appreciated that where the substrate 110 comprises different materials, e.g., layers of different materials, a succession of different chemistries, preferably dry-etch chemistries, can be used to successively etch through these different materials, if a single chemistry is not sufficient to etch all the different materials. The composition of the substrate 110 can depend upon, e.g., the electrical device to be formed.
It will be appreciated that the pattern formed by the spacers 165 and then transferred to the second hard mask layer 150 and the substrate 110 can define lines, e.g., interconnects for connecting electrical devices. Preferably, the electrical devices are arranged in an array, such as the electrical devices which form memory cells in the array region of a memory device. The connections 172 (
It will be appreciated that various modifications of the illustrated embodiments are possible. For example, pitch multiplied patterns typically include closed loops, which are formed by spacers that are formed along the wall of a mandrel. Consequently, in non-damascene processes, where the spacers 165, rather the space between the spacers 165, are used to form conductive lines, additional processing steps are preferably used to cut off the ends of these loops, so that each loop forms two individual, non-connected lines. This can be accomplished, for example, by forming a protective mask around the parts of the lines to be maintained, while etching away the unprotected ends of the masks. A suitable method for cutting off the ends of the loops is disclosed in U.S. patent application Ser. No. 10/931,771 to Tran et al., filed Aug. 31, 2004, the entire disclosure of which is incorporated be reference herein. Advantageously, however, by using the spacers 165 to define the location of insulating material, rather than conductive material, the step of cutting off the ends of the spacer loops can be avoided. For example, it is unnecessary to cut off the ends of spacers loops where the spaces, e.g., the spaces formerly occupied by the mandrels, between the spacers 165 determine the location and shape of interconnects.
Also, in some cases, the spacers 165 can be removed before processing the substrate 110. Such removal may be beneficial, for example, where the spacers 165 are relatively tall and thin. Such spacers may not be structurally stable and may deform over the course of an etch of the 110 substrate, thereby introducing errors in the pattern etched into the substrate. As a result, removal of the spacers 165 and any remaining parts of the hard mask layer 130 or temporary layer 140 may advantageously stabilize the mask (defined in this example by the lower hard mask layer 150) through which the substrate 110 is processed.
In addition, the pitch of the spacers 165 can be more than doubled. For example, the spacers 165 can be further pitch multiplied by removing the mandrels 134 a, forming additional spacers around the spacers 165, removing the spacers 165, then forming another set of spacers around the spacers that were formerly around the spacers 165, and so on. An exemplary method for further pitch multiplication is discussed in U.S. Pat. No. 5,328,810 to Lowrey et al.
Moreover, the preferred embodiments can be employed multiple times throughout an integrated circuit fabrication process to form pitch multiplied features in a plurality of layers or vertical levels, which may be vertically contiguous or non-contiguous and/or vertically separated. In such cases, each of the individual levels to be patterned would constitute a substrate 110 and the various layers 120-170 can formed over the individual level to be patterned. It will also be appreciated that the particular composition and height of the various layers 120-170 discussed above can be varied depending upon a particular application. For example, the thickness of the layer 150 can be varied depending upon the identity of the substrate 110, e.g., the chemical composition of the substrate, whether the substrate comprises single or multiple layers of material, the depth of features to be formed, etc., and the available etch chemistries. In some cases, one or more layers of the layer 120-170 can be omitted or more layers can be added. For example, in some cases, the pattern formed in the second hard mask layer 150 can be transferred to one or more additional hard mask layers, to provide a hard mask with increased resistance to etches selective for the substrate 110.
Also, while "processing" through a mask layer preferably involves etching underlying material, processing through the mask layers can involve subjecting layers underlying the mask layers to any semiconductor fabrication process. For example, processing can involve ion implantation, diffusion doping, depositing, oxidizing (particularly with use of a hard mask under the polymer mask), nitridizing, etc. through the mask layers and onto underlying layers. In addition, the mask layers can be used as a stop or barrier for chemical mechanical polishing (CMP) or CMP can be performed on any of the layers to allow for both planarization and etching of the underlying layers, as discussed in U.S. patent application Ser. No. 11/216,477, filed Aug. 31, 2005, the entire disclosure of which is incorporated by reference herein.
It will be appreciated from the description herein that the invention includes various aspects. For example, according to one aspect of the invention, a method is provided for integrated circuit fabrication. The method comprises patterning a first photoresist layer to form a photoresist pattern over a substrate. The photoresist pattern is transferred to a hardmask layer underlying the photoresist layer and a temporary layer underlying the hardmask layer. Spacers are formed on sidewalls of elements in the patterned hardmask and temporary layers. A second photoresist layer is deposited over the spacers and the patterned hardmask and temporary layers. The second photoresist layer is patterned to expose some parts of the patterned hardmask and temporary layers and to expose some of the spacers, while leaving photoresist directly over other parts of the patterned hardmask and temporary layers and over others of the spacers. The exposed parts of the patterned hardmask and temporary layers are subsequently preferentially removed. The second photoresist layer is preferentially removed.
According to another aspect of the invention, a method is provided for forming an integrated circuit. The method comprises patterning a selectively definable layer to simultaneously define array mask elements in an array region and periphery mask elements in a periphery region of a partially fabricated integrated circuit. Pitch multiplication is subsequently performed in the array region to form a plurality of free-standing spacers. A pattern defined at least partly by the free-standing spacers and the periphery mask elements are simultaneously transferred to a substrate.
According to yet another aspect of the invention, a method is provided for fabricating an integrated circuit. The method comprises providing a substrate with an overlying photoresist layer. The photoresist layer is patterned using a photolithographic technique, thereby forming a photoresist pattern comprising photoresist material separated by voids. The photoresist material and voids extend over an array region and a periphery region of the integrated circuit. The photoresist pattern is transferred to an underlying temporary layer to form a temporary layer pattern. The elements in the temporary layer pattern are subsequently shrunk in both the array and the periphery regions. A blanket layer of spacer material is deposited over the temporary layer elements. The blanket layer is etched to form spacers at sides of the temporary layer elements.
According to another aspect of the invention, a partially fabricated integrated circuit is provided. The partially fabricated integrated circuit comprises a plurality of mask elements overlying a hard mask layer. The hard mask layer overlies a substrate. Spacers are disposed on sidewalls of the mask elements. A protective layer directly overlies some of the spacers and some of the mask elements. The protective layer also leaves others of the spacers and others of the mask elements exposed.
According to yet another aspect of the invention, a partially formed integrated circuit is provided. The partially formed integrated circuit comprises a plurality of pairs of spacers over a substrate. Spacers constituting each pair of spacers are separated by a selectively etchable material. A patterned photoresist layer overlies some of the pairs of spacers. Photoresist overlies at least some spacers in a periphery or interface region of the partially fabricated integrated circuit, while spacers in an array region of the partially fabricated integrated circuit are exposed.
According to another aspect of the invention, a partially formed integrated circuit is provided. The partially formed integrated circuit comprises a plurality of pairs of free-standing spacers disposed over an array region of the partially fabricated integrated circuit. An other plurality of other pairs of spacers is disposed on the same level as the plurality of pairs of spacers. Spacers constituting each of the other pairs of spacers are disposed on sidewalls of a temporary material selectively etchable relative to the other pairs of spacers. The temporary material is provided with one or more openings.
In addition to the above disclosure, it will also be appreciated by those skilled in the art that various omissions, additions and modifications may be made to the methods and structures described above without departing from the scope of the invention. All such modifications and changes are intended to fall within the scope of the invention, as defined by the appended claims.
|Cited Patent
|Filing date
|Publication date
|Nov 3, 1978
|Nov 18, 1980
|International Business Machines Corporation
|Method for forming an insulator between layers of conductive material
|Dec 30, 1981
|Dec 13, 1983
|International Business Machines Corporation
|Fabrication process of sub-micrometer channel length MOSFETs
|Dec 7, 1981
|Feb 21, 1984
|Bell Telephone Laboratories, Incorporated
|Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
|Oct 28, 1983
|Mar 5, 1985
|International Business Machines Corporation
|Method of making structures with dimensions in the sub-micrometer range
|Mar 30, 1981
|Apr 2, 1985
|International Business Machines Corporation
|Lateral device structures using self-aligned fabrication techniques
|Oct 30, 1985
|Mar 10, 1987
|International Business Machines Corporation
|Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer
|Nov 28, 1984
|Dec 29, 1987
|Nec Corporation
|Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film
|Oct 30, 1987
|Oct 11, 1988
|International Business Machines Corporation
|Formation of variable-width sidewall structures
|Jun 20, 1988
|Jun 13, 1989
|International Business Machines Corporation
|Process for defining organic sidewall structures
|Jul 18, 1990
|May 7, 1991
|Micron Technology, Inc.
|Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography
|Sep 26, 1990
|Sep 10, 1991
|Micron Technology, Inc.
|Method of forming a narrow self-aligned, annular opening in a masking layer
|Jul 19, 1990
|Oct 1, 1991
|Micron Technology, Inc.
|Process for creating an etch mask suitable for deep plasma etches employing self-aligned silicidation of a metal layer masked with a silicon dioxide template
|Oct 16, 1991
|May 26, 1992
|Huls Aktiengesellschaft
|Process for the preparation of organosilanes containing methacryloyloxy or acryloyloxy groups
|Nov 25, 1992
|Jul 12, 1994
|Micron Technology, Inc.
|Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
|Jul 16, 1992
|Jul 19, 1994
|Micron Technology, Inc.
|Method for fabrication of close-tolerance lines and sharp emission tips on a semiconductor wafer
|Jan 7, 1993
|Nov 28, 1995
|International Business Machines Corporation
|Diamond-like carbon films from a hydrocarbon helium plasma
|Jan 13, 1995
|May 7, 1996
|Myrick; James J.
|SOI methods and apparatus
|Jul 12, 1995
|Jan 14, 1997
|Hyundai Electronics Industries Co. Ltd.
|Method for forming submicroscopic patterns
|Sep 20, 1996
|Sep 23, 1997
|Micron Technology, Inc.
|Thin film transistors
|Jun 20, 1996
|May 19, 1998
|Hyundai Electronics Industries Co., Ltd.
|Method for fabricating metal oxide field effect transistors
|Apr 23, 1996
|Aug 4, 1998
|International Business Machines Corporation
|Plating of noble metal electrodes for DRAM and FRAM
|Jul 26, 1996
|Aug 18, 1998
|International Business Machines Corporation
|Reducing pitch with continuously adjustable line and space dimensions
|Jan 9, 1997
|Nov 3, 1998
|International Business Machines Corporation
|Sputter deposition of hydrogenated amorphous carbon film and applications thereof
|Aug 29, 1996
|May 4, 1999
|Sony Corporation
|Method of forming pattern
|Nov 1, 1996
|Dec 7, 1999
|Micron Technology, Inc.
|Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry
|Jan 20, 1998
|Dec 21, 1999
|Advanced Micro Devices, Inc.
|Core array and periphery isolation technique
|Aug 19, 1997
|Jan 4, 2000
|Nec Corporation
|Semiconductor device with isolation insulating film tapered and method of manufacturing the same
|Sep 17, 1997
|Mar 28, 2000
|The University Of New Mexico
|Method and apparatus for extending spatial frequencies in photolithography images
|May 17, 1999
|May 2, 2000
|Vanguard International Semiconductor Corporation
|Design for high density memory with relaxed metal pitch
|Sep 29, 1997
|May 16, 2000
|Intel Corporation
|Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
|Nov 10, 1998
|Jun 6, 2000
|Vanguard International Semiconductor Corporation
|Method for simultaneously fabricating a DRAM capacitor and metal interconnections
|Apr 28, 1999
|Aug 29, 2000
|Worldwide Semiconductor Manufacturing Corp.
|Method for forming a hard mask of half critical dimension
|Dec 12, 1997
|Nov 7, 2000
|Applied Materials Inc
|Method for high temperature etching of patterned layers using an organic mask stack
|Dec 10, 1998
|Mar 27, 2001
|Samsung Electronics Co., Ltd.
|Semiconductor device and method for fabricating the same
|Apr 12, 1999
|Apr 3, 2001
|Advanced Micro Devices
|Process for fabricating a semiconductor device component using a selective silicidation reaction
|Jun 23, 2000
|Sep 11, 2001
|Lsi Logic Corporation
|Semiconductor wafer having a layer-to-layer alignment mark and method for fabricating the same
|Dec 19, 1997
|Sep 18, 2001
|Applied Materials, Inc.
|Etch stop layer for dual damascene process
|Mar 10, 2000
|Oct 2, 2001
|United Microelectronics Corp.
|Dual damascene interconnect structure with reduced parasitic capacitance
|Sep 29, 2000
|Jan 1, 2002
|Vanguard International Semiconductor Corporation
|Method of making pillar-type structure on semiconductor substrate
|Aug 25, 2000
|Feb 19, 2002
|Micron Technology, Inc.
|Use of dilute steam ambient for improvement of flash devices
|Oct 26, 1999
|Mar 26, 2002
|Motorola, Inc.
|Method for forming a semiconductor device
|Sep 6, 2000
|May 7, 2002
|Sony Corporation
|Process for fabricating a semiconductor device
|Aug 30, 2000
|May 28, 2002
|Micron Technology, Inc.
|Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
|Mar 21, 2000
|Jul 23, 2002
|Micron Technology, Inc.
|Use of DARC and BARC in flash memory processing
|Aug 14, 2000
|Sep 24, 2002
|Micron Technology, Inc.
|Nucleation for improved flash erase characteristics
|Jun 28, 2002
|Dec 31, 2002
|Advanced Micro Devices, Inc.
|Method of forming sub-lithographic spaces between polysilicon lines
|May 13, 1998
|Feb 4, 2003
|Semiconductor Process Laboratory Co., Ltd.
|Method for reforming base surface, method for manufacturing semiconductor device and equipment for manufacturing the same
|Aug 2, 2001
|Feb 18, 2003
|Micron Technology, Inc.
|Programming methods for multi-level flash EEPROMs
|Oct 23, 2001
|Mar 18, 2003
|Advanced Micro Devices, Inc.
|Chemical feature doubling process
|Jun 5, 2001
|Apr 15, 2003
|Applied Materials, Inc.
|Method of producing an interconnect structure for an integrated circuit
|Jun 13, 2002
|May 6, 2003
|Advanced Micro Devices, Inc.
|Method of using amorphous carbon as spacer material in a disposable spacer process
|Aug 26, 2002
|May 20, 2003
|Intel Corporation
|Forming polymer features on a substrate
|Jun 8, 2000
|Jun 3, 2003
|Applied Materials, Inc.
|Method for depositing an amorphous carbon layer
|May 13, 2002
|Aug 5, 2003
|Taiwan Semiconductor Manufacturing Co., Ltd
|Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layer
|Jul 19, 2000
|Oct 14, 2003
|International Business Machines Corporation
|Self-trimming method on looped patterns
|Jan 7, 2002
|Oct 28, 2003
|Macronix International Co., Ltd.
|Method for pitch reduction
|Oct 12, 2000
|Dec 23, 2003
|Vram Technologies, Llc
|Method and apparatus for patterning fine dimensions
|Jan 2, 2003
|Jan 6, 2004
|Advanced Micro Devices, Inc.
|Use of diamond as a hard mask material
|Dec 20, 2002
|Feb 3, 2004
|Motorola, Inc.
|Vertical MOSFET with asymmetric gate structure
|Jun 28, 2002
|Feb 10, 2004
|Taiwan Semiconductor Manufacturing Company
|Multi-purpose composite mask for dual damascene patterning
|Oct 22, 2002
|Mar 16, 2004
|Advanced Micro Devices, Inc.
|Method for forming multiple structures in a semiconductor device
|Oct 9, 2002
|Mar 23, 2004
|Axcelis Technologies, Inc.
|Process for reducing edge roughness in patterned photoresist
|Jun 12, 2002
|May 11, 2004
|Macronix International Co., Ltd.
|Pitch reduction in semiconductor fabrication
|Aug 24, 2001
|Jun 1, 2004
|Micron Technology Inc.
|Floating gate transistor with horizontal gate layers stacked next to vertical body
|May 20, 2003
|Aug 10, 2004
|Advanced Micro Devices, Inc.
|Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning
|Aug 29, 2002
|Sep 21, 2004
|Micron Technology Inc
|Annular gate and technique for fabricating an annular gate
|Jul 31, 2002
|Oct 5, 2004
|Micron Technology, Inc.
|Semiconductor dice having back side redistribution layer accessed using through-silicon vias, and assemblies
|Jul 14, 2003
|Dec 28, 2004
|Advanced Micro Devices, Inc.
|Partially de-coupled core and periphery gate module process
|Nov 10, 2003
|Mar 15, 2005
|Macronix International Co., Ltd.
|Fabrication method of sub-resolution pitch for integrated circuits
|Jan 20, 2004
|Apr 5, 2005
|International Business Machines Corporation
|Method for forming quadruple density sidewall image transfer (SIT) structures
|Sep 3, 2002
|May 17, 2005
|Infineon Technologies Ag
|Process for sidewall amplification of resist structures and for the production of structures having reduced structure size
|Nov 26, 2003
|Jul 12, 2005
|Hynix Semiconductor Inc.
|Overcoating composition for photoresist and method for forming photoresist pattern using the same
|Jun 16, 2003
|Aug 2, 2005
|Applied Materials, Inc.
|Method for fabricating a gate structure of a field effect transistor
|May 27, 2004
|Oct 18, 2005
|Macronix International Co., Ltd.
|Method for defining a minimum pitch in an integrated circuit beyond photolithographic resolution
|Dec 10, 2003
|Nov 8, 2005
|Microntechnology, Inc.
|Methods of fabrication of semiconductor dice having back side redistribution layer accessed using through-silicon vias and assemblies thereof
|Apr 28, 2003
|Mar 21, 2006
|Advanced Micro Devices, Inc.
|Use of amorphous carbon for gate patterning
|Feb 28, 2005
|Jul 11, 2006
|Hynix Semiconductor Inc.
|Capacitor of semiconductor device and method for forming the same
|Sep 2, 2004
|Oct 3, 2006
|Micron Technology, Inc.
|Method for integrated circuit fabrication using pitch multiplication
|Jun 8, 2004
|Feb 27, 2007
|Macronix International Co., Ltd.
|Method of pitch dimension shrinkage
|Dec 13, 2004
|Feb 27, 2007
|Intel Corporation
|Quantum wire gate device and method of making same
|Feb 23, 2006
|Apr 10, 2007
|Hynix Semiconductor Inc.
|Method of forming micro pattern in semiconductor device
|Nov 29, 2004
|Apr 24, 2007
|Texas Instruments Incorporated
|Pitch multiplication process
|Feb 3, 2005
|Sep 18, 2007
|Lam Research Corporation
|Reduction of feature critical dimensions using multiple masks
|May 9, 2005
|Oct 30, 2007
|International Business Machines Corporation
|Double gated transistor and method of fabrication
|Aug 1, 2005
|Nov 6, 2007
|Infineon Technologies Ag
|Method of production pitch fractionizations in semiconductor technology
|Sep 1, 2004
|Oct 28, 2008
|Micron Technology, Inc.
|DRAM cells with vertical transistors
|May 24, 2006
|May 26, 2009
|Synopsys, Inc.
|Patterning a single integrated circuit layer using multiple masks and multiple masking layers
|Sep 14, 2006
|Feb 23, 2010
|Micron Technology, Inc.
|Efficient pitch multiplication process
|Nov 30, 2007
|Dec 14, 2010
|Hynix Semiconductor Inc.
|Method of forming an etching mask pattern from developed negative and positive photoresist layers
|Sep 20, 2001
|Apr 11, 2002
|Bjarni Bjarnason
|Method in etching of a substrate
|Dec 12, 2001
|Apr 18, 2002
|Werner Juengling
|Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
|Nov 30, 2000
|May 30, 2002
|Cantell Marc W.
|Etching of hard masks
|Dec 4, 2000
|Jun 6, 2002
|Jiunn-Ren Hwang
|Method of forming opening in wafer layer
|Dec 21, 2001
|Jul 18, 2002
|Semiconductor Leading Edge Technologies, Inc.
|Method of forming fine patterns
|May 8, 2002
|Sep 12, 2002
|Fujitsu Limited
|Semiconductor device and method for fabricating the same
|Mar 1, 2000
|Jan 9, 2003
|Brian Doyle
|Quantum wire gate device and method of making same
|Aug 8, 2002
|Mar 6, 2003
|Yi-Yu Hsu
|Process for improving critical dimension uniformity
|Oct 24, 2002
|Jun 12, 2003
|Hiroshi Kujirai
|Method of manufacturing semiconductor device and semiconductor device
|Jul 16, 2002
|Jun 26, 2003
|Applied Materials, Inc.
|Method of forming a dual damascene structure
|Jan 7, 2002
|Jul 10, 2003
|Macronix International Co., Ltd.
|Method for pitch reduction
|Feb 20, 2003
|Aug 21, 2003
|Dirk Manger
|Method for forming a hard mask in a layer on a planar device
|May 3, 2002
|Nov 6, 2003
|Weimin Li
|Method of fabricating a semiconductor multilevel interconnect structure
|May 1, 2002
|Nov 6, 2003
|Swaminathan Sivakumar
|Patterning tighter and looser pitch geometries
|Mar 24, 2003
|Nov 20, 2003
|Jon Maimon
|Method for making tapered opening for programmable resistance memory element
|May 17, 2002
|Nov 20, 2003
|International Business Machines Corporation
|Method of forming active devices of different gatelengths using lithographic printed gate images of same length
|May 19, 2003
|Dec 18, 2003
|Dong-Seok Nam
|Method of forming fine patterns of semiconductor device
|Jun 28, 2002
|Jan 1, 2004
|Infineon Technologies North America Corp.
|Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity
|Jul 23, 2002
|Jan 29, 2004
|So Daniel W.
|Fabricating sub-resolution structures in planar lightwave devices
|Jul 21, 2003
|Jan 29, 2004
|Wei Liu
|Method for fabricating a notch gate structure of a field effect transistor
|Dec 30, 2002
|Feb 5, 2004
|Advanced Micro Devices, Inc.
|Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
|Aug 2, 2002
|Feb 5, 2004
|Applied Materials Inc.
|Undoped and fluorinated amorphous carbon film as pattern mask for metal etch
|Aug 11, 2003
|Mar 4, 2004
|Voshell Thomas W.
|Random access memory device utilizing a vertically oriented select transistor
|Jun 16, 2003
|Mar 4, 2004
|Wei Liu
|Method for fabricating a gate structure of a field effect transistor
|Sep 18, 2002
|Mar 18, 2004
|Gian Sharma
|Method for forming a sublithographic opening in a semiconductor process
|Oct 28, 2002
|Apr 29, 2004
|Sandisk Corporation
|Flash memory cell arrays having dual control gates per memory cell charge storage element
|Nov 25, 2003
|Jun 3, 2004
|Matsushita Electric Industrial Co., Ltd.
|Method for fabricating semiconductor device
|Dec 9, 2003
|Nov 25, 2004
|Renesas Technology Corp.
|Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film
|Oct 1, 2004
|Apr 7, 2005
|Dongbu Electronics Co., Ltd.
|Semiconductor device and a method for fabricating the semiconductor device
|Nov 1, 2004
|May 26, 2005
|Kabushiki Kaisha Toshiba
|Light-emitting device and method for manufacturing the same
|Dec 22, 2004
|Jun 30, 2005
|Samsung Electronics Co., Ltd.
|Method of forming a pattern in a semiconductor device and method of forming a gate using the same
|Jan 8, 2004
|Jul 14, 2005
|Toshiharu Furukawa
|Method of independent P and N gate length control of FET device made by sidewall image transfer technique
|Jan 27, 2004
|Jul 28, 2005
|Micron Technology, Inc.
|Selective epitaxy vertical integrated circuit components and methods
|Jan 30, 2004
|Aug 4, 2005
|Wei Liu
|Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
|Apr 20, 2005
|Aug 25, 2005
|Jackson Timothy L.
|Semiconductor dice having backside redistribution layer accessed using through-silicon vias, methods
|Jun 8, 2004
|Dec 8, 2005
|Macronix International Co., Ltd.
|Method of pitch dimension shrinkage
|Jul 1, 2004
|Jan 5, 2006
|Lane Richard H
|Method for forming controlled geometry hardmasks including subresolution elements and resulting structures
|Aug 10, 2005
|Jan 19, 2006
|Werner Juengling
|Semiconductor structures and memory device constructions
|Jul 28, 2004
|Feb 2, 2006
|International Business Machines Corporation
|Borderless contact structures
|Jun 10, 2005
|Feb 2, 2006
|Hynix Semiconductor, Inc.
|Method for fabricating semiconductor device using amorphous carbon layer as sacrificial hard mask
|Aug 31, 2004
|Mar 2, 2006
|Zhiping Yin
|Prevention of photoresist scumming
|Sep 1, 2004
|Mar 2, 2006
|Abatchev Mirzafer K
|Mask material conversion
|Sep 2, 2004
|Mar 2, 2006
|Sandhu Gurtej S
|Method to align mask patterns
|Aug 31, 2004
|Mar 2, 2006
|Micron Technology, Inc.
|Methods for increasing photo alignment margins
|Sep 2, 2004
|Mar 2, 2006
|Abatchev Mirzafer K
|Method for integrated circuit fabrication using pitch multiplication
|Oct 7, 2005
|Apr 20, 2006
|Ho-Chul Kim
|Apparatus for exposing a substrate, photomask and modified illuminating system of the apparatus, and method of forming a pattern on a substrate using the apparatus
|Nov 30, 2004
|Jun 1, 2006
|Michael Specht
|Charge-trapping memory cell and method for production
|Feb 3, 2005
|Aug 3, 2006
|Jeffrey Marks
|Reduction of feature critical dimensions using multiple masks
|Dec 7, 2005
|Aug 24, 2006
|Hynix Semiconductor Inc.
|Composition for an organic hard mask and method for forming a pattern on a semiconductor device using the same
|Aug 29, 2005
|Sep 21, 2006
|Luan Tran
|Pitch reduced patterns relative to photolithography features
|Aug 31, 2005
|Sep 28, 2006
|Tran Luan C
|Integrated circuit fabrication
|Mar 6, 2006
|Oct 19, 2006
|Ji-Young Lee
|Semiconductor device having fine contacts and method of fabricating the same
|May 23, 2005
|Nov 23, 2006
|Mirzafer Abatchev
|Methods for forming arrays of a small, closely spaced features
|May 26, 2005
|Nov 30, 2006
|Micron Technology, Inc.
|Multi-state memory cell
|Jun 2, 2005
|Dec 7, 2006
|Micron Technology, Inc., A Corporation
|Multiple spacer steps for pitch multiplication
|Jun 9, 2005
|Dec 14, 2006
|Wells David H
|Method and apparatus for adjusting feature size and position
|Jul 29, 2005
|Feb 1, 2007
|Micron Technology, Inc.
|Pitch doubled circuit layout
|Sep 1, 2005
|Mar 1, 2007
|Haller Gordon A
|Memory cell layout and process flow
|Sep 1, 2005
|Mar 1, 2007
|Wells David H
|Methods for forming arrays of small, closely spaced features
|Sep 1, 2005
|Mar 1, 2007
|Micron Technology, Inc., A Corporation
|Method of forming isolated features using pitch multiplication
|Sep 1, 2005
|Mar 1, 2007
|Sandhu Gurtej S
|Pitch multiplication spacers and methods of forming the same
|Sep 1, 2005
|Mar 1, 2007
|Mirzafer Abatchev
|Protective coating for planarization
|Aug 31, 2005
|Mar 1, 2007
|Tran Luan C
|Method of forming pitch multipled contacts
|Aug 25, 2005
|Mar 1, 2007
|Micron Technology, Inc., A Corporation
|Multiple deposition for integration of spacers in pitch multiplication process
|Aug 30, 2005
|Mar 1, 2007
|Micron Technology, Inc., A Corporation
|Method and algorithm for random half pitched interconnect layout with constant spacing
|Sep 29, 2006
|Apr 5, 2007
|Samsung Electronics Co., Ltd.
|Method for forming patterns of semiconductor device
|Mar 7, 2006
|Sep 13, 2007
|Dirk Caspary
|Memory device and an array of conductive lines and methods of making the same
|Mar 17, 2006
|Sep 20, 2007
|Toshiharu Furukawa
|Layout and process to contact sub-lithographic structures
|Oct 14, 2004
|Sep 20, 2007
|The Regents Of The University Of California
|Methods for Fabrication of Positional and Compositionally Controlled Nanostructures on Substrate
|May 24, 2006
|Nov 29, 2007
|Synopsys, Inc.
|Patterning A Single Integrated Circuit Layer Using Multiple Masks And Multiple Masking Layers
|Sep 6, 2006
|Mar 6, 2008
|International Business Machines Corporation
|Vertical field effect transistor arrays and methods for fabrication thereof
|May 24, 2007
|Nov 27, 2008
|Advanced Micro Devices, Inc.
|High fidelity multiple resist patterning
|Oct 29, 1992
|May 5, 1994
|Siemens Ag
|Method for forming a structure in the surface of a substrate - with an auxiliary structure laterally bounding an initial masking structure, followed by selective removal of masking structure using the auxiliary structure as an etching mask
|Nov 20, 1986
|Jul 1, 1987
|Plessey Overseas Limited
|Method of manufacturing semiconductor devices having side-wall isolation
|Nov 7, 1991
|Oct 28, 1992
|Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno
|Process for making planarized sub-micrometric trenches in integrated circuits
|Apr 17, 2003
|Jun 23, 2004
|Hewlett-Packard Company
|Method of fabricating sub-lithographic sized line and space patterns
|Apr 29, 2002
|Dec 12, 2002
|Infineon Technologies, Ag
|Method for removing polysilane from a semiconductor without stripping
|Jun 18, 2003
|Dec 31, 2003
|Applied Materials, Inc.
|Method for fabricating a gate structure of a field effect transistor
|Jun 24, 2003
|Jan 8, 2004
|Advanced Micro Devices, Inc.
|Method of defining the dimensions of circuit elements by using spacer deposition techniques
|Sep 30, 2004
|Apr 14, 2005
|Infineon Technologies Ag
|Method for the production of a hard mask and hard mask arrangement
|"U.S. Appl. No. 11/543,515, filed Oct. 24, 2006, MICRON Ref. No. 2005-1173.00/US."
|Bergeron, et al., "Resolution Enhancement Techniques for the 90nm Technology Node and Beyond," Future Fab International, Issue 15, Jul. 11, 2003, 4 pages.
|Bhave et al., "Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process," preprint of Proceedings of SPIE: Advances in Resist Technology and Processing XXI, vol. 5376, John L. Sturtevant, editor, 2004, 8 pages.
|Bruek, S.R.J., "Optical and interferometric lithography-Nanotechnology enablers," Proceedings of the IEEE, vol. 93, No. 10, Oct. 2005, pp. 1704-1721.
|Bruek, S.R.J., "Optical and interferometric lithography—Nanotechnology enablers," Proceedings of the IEEE, vol. 93, No. 10, Oct. 2005, pp. 1704-1721.
|Choi et al. "Sublithographic nanofabrication technology for nanocatalysts and NDA chips," J. Vac. Sci. Technol. pp. 2951-2955 (Nov./Dec. 2003).
|Chung et al., "Nanoscale Multi-Line Patterning Using Sidewall Structure," Jpn., J. App.. Phys. vol. 41 (2002) Pt. 1, No. 6B, pp. 4410-4414.
|Chung et al., "Pattern multiplication method and the uniformity of nanoscale multiple lines*," J.Vac.Sci.Technol. B21(4), Jul./Aug. 2003, pp. 1491-1495.
|Ex Parte Cantell, unpublished decision of the Board of Patent Appeals and Interferences, Mar. 4, 2005.
|Joubert et al., "Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas," Microelectronic Engineering 69 (2003), pp. 350-357.
|Oehrlein et al., "Pattern transfer into low dielectic materials by high-density plasma etching," Solid State Tech., May 2000, 8 pages.
|Sheats et al., "Microlithography: Science and Technology," Marcel Dekkar, Inc., pp. 104-105 (1998).
|U.S. Office Action issued Jul. 11, 2008 in U.S. Appl. No. 11/367,020, filed Mar. 2, 2006.
|U.S. Office Action issued Jun. 2, 2008 in U.S. Appl. No. 11/219,067, filed Sep. 1, 2005.
|U.S. Office Action issued Jun. 5, 2008 in U.S. Appl. No. 11/514,117, filed Aug. 30, 2006.
|Citing Patent
|Filing date
|Publication date
|Jul 30, 2012
|Mar 3, 2015
|International Business Machines Corporation
|Non-lithographic line pattern formation
|Feb 1, 2013
|Jun 30, 2015
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Self aligned patterning with multiple resist layers
|Dec 19, 2013
|Sep 15, 2015
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method for integrated circuit patterning
|Aug 11, 2014
|Jul 19, 2016
|International Business Machines Corporation
|Non-lithographic line pattern formation
|Aug 30, 2013
|Oct 11, 2016
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method for integrated circuit patterning
|Sep 14, 2015
|Feb 21, 2017
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method of spacer patterning to form a target integrated circuit pattern
|Jun 29, 2015
|Feb 28, 2017
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Self aligned patterning with multiple resist layers
|Feb 4, 2015
|Jun 6, 2017
|Globalfoundries Inc.
|Method for quadruple frequency FinFETs with single-fin removal
|Feb 1, 2013
|Aug 7, 2014
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Self Aligned Patterning With Multiple Resist Layers
|Aug 30, 2013
|Mar 5, 2015
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method For Integrated Circuit Patterning
|Mar 2, 2015
|Jun 18, 2015
|Micron Technology, Inc.
|Methods for device fabrication using pitch reduction and related devices
|Dec 19, 2013
|Jun 25, 2015
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method For Integrated Circuit Patterning
|Sep 14, 2015
|Jan 7, 2016
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method for integrated circuit patterning
|U.S. Classification
|430/314, 430/316
|International Classification
|Cooperative Classification
|European Classification
|Oct 18, 2011
|Certificate of correction
|Feb 18, 2015
|Fee payment
Year of fee payment: 4
|May 12, 2016
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subset: commoncrawl


text:
This impossibly awesome Howl's Moving Castle cosplay was made by Sonja Cool from Hopkins, Minnesota over the course of a year and a half. She took breaks during the build, but that's still a huge amount of time to commit to one costume. According to BuzzFeed:
"It's a base of chicken wire, 12-gauge wire, with a little bit of mattress pad foam, and then a TON of EVA craft foam," says Sonja. "The houses are made with foam poster board […] I also used a bit of Apoxie sculpt on the church, and a lot of wood glue to fill in cracks. I bought a largest glue gun I could from the hardware store when I first started, and I'm proud to say I have worn it out."
The whole thing cost between $200 and $300 and weighed roughly 30 pounds when it was complete. It features LED lighting in each house and it even blows smoke!
Sonja wore it at CONvergence in Bloomington, Minnesota where she won Best Master and People's Choice in the Masquerade Costume Contest. Naturally.
See more pictures after the break.
Image: Peter J Verrant
Image: Elantariocosplay
Image: Peter J Verrant
Image: Elantariocosplay
Image: Peter J Verrant
(via BuzzFeed / Top Image: Peter J. Verrant)


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Important Money Facts for 2017
There are a number of Money Facts to keep track of during the year. From registered contribution limits to benefit amounts and tax rates, this infographic serves as a handy reference for these important conversations with clients.
A version of this infographic is also available in French.
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- Available to personalize for individual Advisors
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Order Branded Version See More Infographics


text:
The Cleveland Browns drafted Myles Garrett and then did a bunch of other things. Was it good? Was it bad? Was it a mix? We discuss it all.
Extending Francisco Lindor at the Corner of Carnegie and Ontario
WFNY's Jim Pete breaks down how a potential Francisco Lindor extension could look.
NEO High School Football State Championship Recap: Hoban Repeats
The Ohio High School state championships are in the books for 2016, including a double-overtime thriller in Division I and a repeat champ in Division III.
Ohio State beats Michigan in double-OT instant classic, 30-27
Since their first game in their storied 113-game rivalry that started in 1897, not a single game between the Ohio State Buckeyes and Michigan Wolverines has gone to overtime. That all changed Saturday afternoon. In a double-overtime thriller that featured plenty of defense, offense, and hard-hitting, game-changing plays all over the field from both teams,
NEO High School Football Playoff Wk 3: Cuyahoga Hts, Hoban win
What a week of high school football. Games were decided by the last possession of games and some even in overtime. It was one of the most exciting weeks of football in not just Northeast Ohio, but the entire state. With wins this past weekend, there are just four teams left in each of Ohio's
Browns make it sort of interesting, but lose to Steelers, 24-9
The Cleveland Browns lost their eleventh game of the season, falling to the Pittsburgh Steelers, 24-9, at FirstEnergy Stadium on Sunday. The Browns had a chance to possibly earn their first win of the season, but their offense was unable to do much of anything against the Steelers defense. In the loss, the Browns were
Silver Bullets bail out Buckeyes' offense in 17-16 win at MSU
The Michigan State Spartans may have been 3-7 entering Saturday, but they gave the Ohio State Buckeyes a game yet again, just like they seemed to have done in the last four meetings since Urban Meyer became the head coach in Columbus. Luckily for the Bucks, the defense was able to hold off Sparty in
NEO High School Football Playoff Wk 2: St. Xavier upsets Colerain
Week 2 of Ohio High School Football is in the books with plenty of upsets to discuss. WFNY's Joe Gilbert has the goods.
Ohio State scores early and often, rout Maryland, 62-3
Saturday afternoon's game wasn't supposed to be close, but it also wasn't supposed to be that big of a blowout either. Whether it was quarterback J.T. Barrett, H-back Curtis Samuel, or any of the other number of touchdown scorers, the Ohio State Buckeyes scored early and often in their 62-3 blowout win over the Maryland
Rinse, Repeat: Browns lose to Ravens, 28-7
Same old Browns, right? The Cleveland Browns once again forked over a first half lead, succumbing to the Baltimore Ravens on Thursday night, 28-7. The Browns led 7-6 at half, but a second half collapse gave the victory to the Ravens and yet another loss to Cleveland, their 10th in as many weeks this season.
NEO High School Football Playoff Week 1: Avon Lake upsets Avon
The Northeast Ohio High School football playoffs are underway and all the action is being catalogued and parsed here by WFNY. Follow the action of your favorite team.
Buckeyes make it look easy, blow out Nebraska, 62-3
With a bunch of big-time recruits in attendance and in front of the second-biggest crowd in Ohio Stadium history, the Ohio State Buckeyes put on a show both offensively and defensively in their blowout 62-3 win over No. 10 Nebraska Saturday night. Whether it was quarterback J.T. Barrett, H-back Curtis Samuel, safety Malik Hooker, or
NEO High School Football: 2016 Ohio HS Playoff Predictions
Ignatius? Hoban? Mogadore? WFNY predicts the champions for each division of Ohio High School Football.
NEO High School Football Week 10: St. Ignatius beats St. Edward
The regular season in Ohio high school football has wrapped up, ending in a big Week 10 this past weekend. Week 10 was the final time teams had a chance to improve their resume and maneuver their way into the playoffs. It saw a lot of big time games with huge playoff implications. It also
Browns fall apart in the second half, lose to the Jets, 31-28
That thump you heard this afternoon was the Cleveland Browns falling apart against the New York Jets. The Browns led 20-7 at half, but ended up losing to the Jets, 31-28 on Sunday at FirstEnergy Stadium. Quarterback Josh McCown completed 25-of-49 passes for 341 yards, two touchdowns and two interceptions in the loss. His leading
Buckeyes outlast Northwestern to get back in win column, 24-20
It wasn't pretty, but the Ohio State Buckeyes were able to redeem themselves after last weeks loss. Back in Ohio Stadium for the first time in three weeks, the scarlet and gray were able to hold off the Northwestern Wildcats, 24-20, in an afternoon and night that had perfect weather for football. Quarter by Quarter
NEO High School Football Week 9: Cuyahoga Hts and Stow impress
The NEO High School football playoffs draw near as Week 9 action helps further sort the seedings.
Browns fall to Bengals, 31-17, as Kessler leaves with concussion
The Cleveland Browns lost their seventh game of the season, falling to the Cincinnati Bengals, 31-17. It was a weird game to say the least. The Browns' leading passer in the game was Kevin Hogan, who came in during the second quarter after Cody Kessler left with a concussion. Hogan marked the sixth quarterback (in
Special teams, coaching cost Buckeyes in 24-21 loss at Penn State
The Ohio State Buckeyes struggle in night games at Happy Valley and that trend continued Saturday night against the Penn State Nittany Lions. Whether it was special teams, offense, defense, or the coaching, the Bucks struggled immensely, losing to their unranked conference opponent, 24-21. Quarter by Quarter First Quarter 11:16 – Fourth-and-6 – Ohio State blocks
The Cleveland Indians are heading to the 2016 World Series
The Cleveland Indians' story is not yet over as the team defied all odds to win the 2016 American League pennant, beating the Toronto Blue Jays, 3-0.


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It's hard to recall these days, now that most bloggers are corporate drones (*cough*), but blogging was originally the pursuit of hobbyists. And now a lot of those hobbyists appear to be giving it up, or at least cutting back, in favor of less demanding hobbies that offer some of the same satisfactions: microblogging and social networking.
2 Replies
Nov 4, 2010 at 11:07 UTC
Elemental IT is an IT service provider.
Interesting... but I have to say that I'm not one for any of the technologies. I have found blogs useful in the past but Facebook and Twitter are continually destroying lives so I haven't got much time for them.
Nov 9, 2010 at 8:23 UTC
I have found myself using my Twitter account over my Blog. I think it is close enough to say that it is indeed true that these services CAN replacing blogging (almost). Some Bloggers have no choice in the matter due to the type or amount of info that they are supplying to the mainstream and these are the people that will keep Blogging alive. Blogging is time consuming enough depending on your work but if you also have a family at home, it is even worse. I still find time to post something here and there but I still tweet. Because of the simplicity of twitter, I actually add more content than I would blogging.
This discussion has been inactive for over a year.
You may get a better answer to your question by starting a new discussion.


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This might be a stupid question but I have another coffee date coming up this weekend.. I totally understand why guys suggest it. Thing is I don't like coffee & caffeine affects me very badly (I have hyperthyroidism and my Dr told me to avoid it). I've been on 3 coffee dates in the past few months and each time I can't sleep the whole night after! Would it look rude if I suggested something else for this next one?
Most Helpful Guy
I don't think it wold be rude I actually say grab a smoothie since I usually go for the more fit looking girls. The general idea is to grab something to eat/drink on a one to one basis, if I were to simply say drink it could be anything and anywhere, many girls would then interpret that to different ideas and to what the guy is really asking for. By saying coffee it could just be a small hangout in order to know the other person better in a setting that would be more open, chill and a public place that could be more relaxing and have the other person be more open on their thoughts, feelings and intentions. This would be the make or break in some situations, it;s usually a go to idea rather than a date where the intentions are very clear or not in some cases and amount of effort in a date and just a "hangout" is starkly different.00|00|0


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In a dark wood: Words and images of mental distress across a century.
This project was a collaboration between Storying Sheffield, Archive Sheffield, and Sheffield Libraries, and resulted in an exhibition at Bank Street Arts in September 2016. The exhibition explored changing perceptions of mental distress/illness by drawing both on contemporary accounts and on the photographic record of the former Middlewood Hospital in Sheffield.
These large-plate glass negatives, kept in the Sheffield Archives and almost certainly unseen since their deposit offer a powerful window into a different era of medical care. Anonymised images from the turn of the 20th century were presented alongside contemporary audio reflections on the nature of illness/distress and care from people currently living with mental health problems. We hoped that the combination of images and sound represented a kind of dialogue across time, generating insight and provoking thought about differing perceptions of mental health, as well as drawing out resonances.
For the original exhibition text, see below.
• Archive Sheffield is a group of photographers and filmmakers who specialise in documentary, story-driven work. We are building an ongoing archive of contemporary photographs taken in and about Sheffield, and are working with other archival organisations to present interesting work from the past to a new audience.
• Sheffield Archives and Local Studies Library collections preserves and makes available information about South Yorkshire from the 12th century to the present.


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Simplicity 4811; ca. 1963; Juniors' and Misses' One-Piece Dress with Two Skirts and Jacket: Dress has lined bodice, self fabric shoulder straps, back zipper closing and self or purchased belt. V. 1 has self fabric bias binding trim and a slim skirt with soft pleats at front waistline and back kick pleat. V. 2 has top-stitching detail and full gathered skirt. Lined jacket has a collar, above-the-elbow length kimono sleeves and is rounded at lower front edges.
Links to reviews/blog posts Edit
Sources/Vendors Edit
Gallery Edit
[insert your photos of this pattern made up]
Wishlist Edit
[insert your username, and make sure your preferences allow for people to contact you via e-mail. Do not list your email address here!]


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Michelle Obama
Why Michelle Obama is a significant influence to our world today.
Amanda Balkon 12 May 2010
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The real Bridget Jones. Bryony Gordon survived her adolescence by dreaming about the life she'd have in her 20s: the perfect job; the lovely flat; the amazing boyfriend.
The reality was something of a shock. Her Telegraph column was a diary of her daily screw-ups; she lived in a series of squalid shoe boxes; and her most meaningful relationship of the entire decade was with a Marlboro Light.
Here in the Sunday Times best-selling The Wrong Knickers, Bryony busts open the glamorized myth of what it means to be a young (perpetually) single girl about London town and shares the horrible and hilarious truth. The truth about picking up a colleague at the STI clinic; sinking into debt to fund a varied diet of wine, crisps, and vodka; and how it feels when your dream man turns out to be a one-night stand who hands you someone else's knickers in the morning.
Bryony's wonderfully ridiculous and ultimately redemptive story is essential listening for everyone whose 'best years' weren't quite what they were expecting....
©2014 Bryony Gordon (P)2015 Headline Digital
"Great read"
Really enjoyed the storyline, loved the narrator, funny book that you can stop listening to & engaging from the very start. Basically a new age Bridget Jones. Highly recommend.
Book blogger that who has delved into the world of audiobooks to reduce the monotony of the daily commute.
"Your Twenties - the bald truth"
The Wrong Knickers first came to my attention on Twitter, as my evening is morning in the UK and hence my feed is full of bookish thoughts from there. I didn't know that Bryony Gordon was a well-known journalist in the UK, I just thought she'd written a memoir of her twenties. I didn't know what she was up to nowadays. That didn't detract from my enjoyment of this audiobook at all, I think it probably added to it as I didn't think Bryony's crazy days were ever going to end!
Growing up, Bryony dreamed of being the highly cool person in her twenties that we've all thought we were going to be. How many of us actually made it to the cool job, awesome flat and fantastic boyfriend? Bryony's twenties were much closer to what we could all relate to – the dodgy one room studio in the even dodgier area, the awful boyfriends and the drunken nights out. I felt a kind of empathy with Bryony, she had that life that everyone did but nobody ever dared to admit. She dropped out of college, getting a job as a dogsbody on a newspaper that eventually led to greater things. She had nights where she didn't recall where she went or how she ended up at the place she awoke. She had crazy times with friends. There were drugs involved. There was a payday lender. There were all the things you thought nobody else did, but Bryony did it all.
What was best though was that Bryony made no excuses. Sure, she screwed up royally many times but she never tried to duck for cover. To use an Aussie phrase, she copped it sweet (took it on the chin). She survived her twenties and turned out quite normal by all accounts but with a number of cringe worthy and hilarious tales to tell. Getting given the wrong knickers by a one night stand? Check. Throwing the mother of all parties in a one room flat? Check. Meeting a work colleague at the STD clinic? Yep. Giving a sympathy pash? Done.
Although Bryony's life seemed to be teetering on the edge of no return at times, never did it seem like she'd lost control. Perhaps it was the way the story was written or perhaps it was that Bryony herself knew that this period was only temporary: that love and stability would soon be found and she'd settle on to the straight and narrow. The beginning of her more 'adult' life chronicled in the book was a little less exciting to hear about, but I felt glad for Bryony and that she'd survived her various horrors. Her writing style was easy to listen to (Sophie Bleasdale was a wonderful narrator, with just the right hint of embarrassment in her voice at times) and very friendly, like a good mate. She tells the story warts and all, which made for a great fascination for me. I couldn't wait to see what mess she'd land herself in next. There have been comparisons to Bridget Jones' Diary, but I think that this is different – this is somebody's real life we're talking about, not insta-messaging Hugh Grant in the office. It's that little bit more can't look away from by knowing that it's real. But, if you are a fan of Bridget or the Sex and the City girls, or just enjoy a good confessional involving outlandish deeds…you certainly won't be disappointed by Bryony's story.
"Nerve toucher"
Spent much of this recalling (not remembering mind you, that would be impossible, is all a blahrrrr) my misspent youth. We woemen are toto loco.
But loved this.
Liked this book, so much so I have already ordered the prequel - this book gives me hope! An easy listen book, would recommend <br/>
"Don't be put off my the slightly monotone narrator"
Initially I was out off by the narrator, but gave it another chance. It's a sweet story of a girl who lost her way when trying to find herself, although in the end she was there all along. There's a lot of swearing, so if you're listening in the car it's best to keep the subdued up!!
"Fun and entertaining"
Really enjoyed lazing about in the sun with this one, made me laugh and remember how I have been in some of the situations the main caricature was finding herself in. Sophie Bleasdale really tells the story, not just reads the book, lots of fun.
"Chaos and custom made delight"
I'm a huge fan and followed of Bryony Gordon, I regularly read her and her mum's column and have followed her career for a long time.
This book is easily relatable to anyone in their late 20s, as Bryony documents and details her own versions of stories and lessons many of us have learnt over the years. From threats of bailiffs, to falling for the wrong guy and having to learn to handle our intoxication and substance levels.
It's funny, well performed and engaging and fun. I would recommend.
"Fast, real and funny."
Great story but didn't much like the narrator's voice. It was a bit depressing and flat and I couldn't help thinking for such a fab account of
Exciting and risky London living, it needed a more animated voice. The story is great though!
"Light hearted chuckle"
Yes it was entertaining and quite light hearted fun, very easy to listen to. I found the crude/crass sense of humour refreshing and honest.
Not sure
A cheeky indignant sense of humour not for anyone who prudish or prim
"Brilliant and honest"
It is a great mix of funny, serious, thought provoking and very honest and real
This is an amazingly funny and heartwarming autobiography, which made me feel as so more normal!
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What is JotForm?
JotForm is a free online form builder which helps you create online forms without writing a single line of code. No sign-up required.
At JotForm, we want to make sure that you're getting the online form builder help that you need. Our friendly customer support team is available 24/7.
We believe that if one user has a question, there could be more users who may have the same question. This is why many of our support forum threads are public and available to be searched and viewed. If you'd like help immediately, feel free to search for a similar question, or submit your question or concern.
Does the expiration date show up on the form?Asked by wazie on March 11, 2014 at 04:46 PM
I believe you are referring to the " Expiration Date " under Form Limits if that is correct? If so then no this does not display the date before or after the form would expire. Instead it only shows the standard form has been disabled message depending on what you have it set to.
A better idea if you want to use the Expire Date and display this on your form would be to use the Day Countdown Widget in conjuction with it so that your form users know when it will expire.


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Thursday, January 27, 2011
Dell Services Wins FBI
Round Rock-based Dell said Thursday that its Perot Systems Government Services (PSGS) unit, part of Dell Services, has gained an opportunity to win major dollars from the Federal Bureau of Investigation (FBI). Dell said it is one of 46 prime service and solutions providers for an IT supply and support contract with the FBI, allowing it to compete for up to $30 billion in IT supply and support services at the FBI over the next eight years. The firm did not say what portion of that contract it expects to be able to compete for.


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*OK after the season finale and after reading an article on what will happen between Tim and Abby next season I had to write an episode tag. So here it is. I hope you all enjoy it! Please read and review!*
The day passed slowly and silently as the remaining members of Gibbs' team mourned the loss of Ziva. It was just as traumatic as last year when Vance split them all up. McGee sat quietly taking orders from Gibbs and clicking away at his keyboard. Tony was in his own little world thinking about how he felt about Ziva and how much he missed her. Gibbs grieved over the loss of another agent, one who saved his life. It was her decision to stay in Mossad with her father. Why did she feel that she couldn't trust NCIS anymore? Because of Tony? Or was it because of something bigger? Whatever it was Gibbs knew she needed time. Gibbs looked at the clock on the screen in front of him.
"DiNozzo, McGee, Go home." He said gruffly.
"Boss?" Tony said. The last time they were told to go home early was when Ari was on the loose and they had both spent hours in the rain checking out his snipers nest. When they got back to NCIS Gibbs told them to go take a shower, put on some dry clothes, and then wanted to know if they needed coffee.
"Go home. It's been a long day." Gibbs reiterated.
"Um…" McGee stammered, not knowing what to say.
"McGee, tell Abby she can go home and then you go home yourself." Gibbs said, "That wasn't a suggestion. You all better be here tomorrow at 0600."
"It's just that…last time we were told to go home early…" DiNozzo started to say. Gibbs lifted his head and glared at him, "Going home, Boss." DiNozzo said, grabbing his things. McGee and DiNozzo quickly headed for the elevator. Gibbs leaned back in his chair and sipped at his coffee wondering just how long Ziva would take to come back, if she ever came back.
Abby's lab
McGee entered quietly and watched Abby for a few minutes. She was sitting at her lab table, her music was slightly quieter than normal and she seemed to be flipping through a book. He knew she was upset. When they found out Ziva wasn't coming back Abby was stunned. Tears pricked her eyes but she wasn't about to lose it in front of Tony so she quickly left the bullpen and retreated to her lab.
"Are you going to stand there all night, McGee?" Abby said, without turning around.
"How'd you know it was me?" He smiled.
"I just knew. What's up? Do you have anything for me?" She asked wishing for anything to distract her from missing Ziva.
"Gibbs said we can all go home." McGee walked up and placed a hand on her shoulder. He looked down at the book she was looking at. He smiled when he realized it wasn't just any book, this was Abby's scrapbook. Since she started NCIS she had kept a scrapbook chronicling their lives.
"I'm going to miss her." She said, her voice catching in her throat.
"I know. Me too." McGee said, squeezing her shoulder gently, "Come on. Gibbs will kill me if I don't get you out of here soon."
"OK." Abby closed her scrapbook and sighed, "What are you doing tonight?" She asked getting up from her chair and walking to her inner lab. She placed the scrapbook in her drawer and locked it up for the night. Smiling slightly when she saw the scratch marks Tony had made trying to get into it a while ago.
"I think I'm going to call up Jules and see if she wants to go out." McGee said.
"Oh…That's…nice." Abby said, jealously dripping in her voice.
McGee looked at her confused, "Why?"
"I was just thinking I could come over. But you have…plans." Abby said her disgust for Tim's new girlfriend showing.
"What's wrong with Jules?" Tim asked wanting to know what Abby's problem was.
"She's not..." Abby started, "Nothing." Abby shook her head and continued around her lab turning off her machines and computers. She felt McGee's eyes following her every movement. She came to a stop in front of Tim, "It's just…we never seem to hang out anymore." She said sadly.
"We hang out all the time." He retorted.
"Not like we used to." She pouted.
"Ah." McGee said as the something clicked inside his head, "You are feeling neglected." He stated. Abby looked down at her feet. She couldn't bear to look Tim in the eyes, "Abby you can't have this both ways. You can't, not want to be in a serious relationship with me and at the same time not want me to date anyone. Do you just expect me to sit on the sidelines forever?" He asked, "That's not fair to me." He said getting angry with her.
"It's not like that." She said trying to figure out how to explain to Tim what she felt.
"Then what is it like, Abby?" Tim practically shouted, "You need to choose. I can't sit on the side because you are too afraid to let anyone in. I've done it for years and I'm not going to do it anymore. I love you. More than anyone I've ever loved before. I'd do anything for you, and I'm pretty sure I've done almost anything in the last few years. And I know that scares the hell out of you that I love you because you've never had anyone that cared before, but I can't sit back and wait for you anymore. You need to make a decision. You either want me or you don't." He said. All his pent up frustration with their 'relationship' came out in a rant.
"It's not that simple." Abby said.
"Yes it is! It's a yes or no question. Yes, you want me or no, you don't." McGee said, looking hurt that she couldn't answer a simple question.
"I can't…." Abby said, not wanting to lose him but fearing the prospect of a serious relationship.
"Fine." He said crossly. He shoved his hands in his pocket and stalked off to the elevator. Abby stood in her lab alone as a tear slipped out of her eye.
Abby's Apartment
Abby sat in the dark in her living room with the light from the TV casting just enough light so she could see her pint of ice cream. She had gone home depressed, frustrated and irritated. McGee was out with Julia again. Abby couldn't believe that she was on the brink of loosing her Timmy. Wait, wait, wait…Her Timmy? He wasn't her Timmy anymore. She had made that painfully clear when she broke up with him after their first year of dating and again today when she couldn't simply answer a question. Why couldn't she just tell him that she loved him too? Why was she so jealous? McGee deserved to be happy and if dating Julia made him happy then why shouldn't he go out with her?
Tim was right, Abby was feeling neglected. She missed him. Yes he had gone out with her when he got back from LA, her lab was his first stop when his plane got in, but something was still hinky with them. She missed him and she wasn't sure why she missed him. She saw him all the time. She saw him at work, and when they off work. But they weren't the same as they were before. They weren't the same as they had always been. Lately there had been some distance between them and Abby knew it was her fault. It was her fault because during the last year, after Director Sheppard's death Abby had thought long and hard about what she would do if it was Tim in that body bag. What would she do if he died in the line of duty? The short answer: She would die without him. She loved him more than anyone she'd ever loved before, and he loved her just as much. But because she'd never had anyone that cared about her back it scared the hell out of her.
The longest relationship she ever had was just a few months, if you don't count the year her ex stalked her and then tried to kill her. Abby and Tim needed to be with each other because they completed each other. Julia wasn't anything like Abby. Yes, she was smart but she didn't understand Tim like Abby. Abby kept Tim from getting to serious and he kept her grounded to Earth. Tim knew how to read Abby's thoughts even when she didn't say anything. He knew what she was feeling by looking at her eyes. She knew more about Tim than she knew about anyone else. She had told him about her past relationships and why she was so scared of loving someone. He had told her about his childhood and how it wasn't the picture perfect childhood everyone thought he had.
She knew she could trust him with anything. She didn't know how she felt about Julia taking over her territory. Abby's eyes widened in revelation. It was a simple yes or no answer. It was an easy question. There was only one solution. She got up from the couch and grabbed her keys. She needed to talk to him and it needed to be now.
McGee's Apartment
Abby rapidly knocked on the door hoping the McGee was home…alone.
"Abby?! Is everything OK?" He said his concern for her outweighing his earlier frustration.
"I'm fine." She stepped into his apartment, "I just needed to talk to you."
"Abby, I don't really want to talk right now." Tim closed his apartment door as he watched Abby pacing around his living room.
"I chose." She said, "I was sitting home and thinking about what you said in my lab and I realized that you were right. I am feeling neglected because things have changed between us. And it's not a good or bad change it's just a change and it started when Director Sheppard died because all I could think about was, what if had been you? Every time you guys go out there you run the risk of not coming back and I don't know what I would do if you never came back. Then Vance broke up the team and sent Ziva back to Israel, Tony on a boat, and you to the Sub-basement. And it changed everything. I didn't see you as often as I did and I only got a few Emails from Tony, and some postcards from Ziva. And now she's back in Israel and what if Vance splits you all up again? I don't think I could go through with that. Especially if Vance sends you away somewhere like back to Norfolk because I can't not be near you. It almost killed me when you were in the Sub-basement. And you went to Chicago on the mission with Ziva and Vance and you went to L.A. with Gibbs and it just seems like there's been so much separation lately that I feel like I'm losing you and I can't lose you. And now that you are dating someone I feel like someone is taking you away from me." Abby paused to take a breath and wipe the tears that were threatening to fall from her eyes, "I can't lose you. I can't sit back and watch someone take you away from me. So you told me to choose, so here I am. I'm choosing." Abby took Tim's hand and gently squeezed it, "I choose you. I mean if you still want me. Because I completely understand if you don't but I just thought you should know that I…I love you. I really, really love you. And it scares me because I've never felt the way I feel. I've never had anyone that cared about me as much as you do. And I'm afraid that one day you'll wake up and realize that I'm not what you want? I don't think I could stand that kind of rejection. You want the Gina-Marie, who bakes cookies, wears J-Lo Glo and stays home to raise the kids, and I can't bake and as much as I love kids I don't want a lot of them and I sure as hell don't want to stay home with them all day. You want the 'normal' American family with the kids, the house, the dog and the white picket fence and I'm as far from 'normal' as possible. You want…" McGee gently places his hand over her mouth to stop her from talking.
"I want you. I love you for who you are." He slid his arms around her waist and pulled her close, "You'll never lose me. Abby there isn't a day that goes by that you aren't the first thing I think about when I wake up and the last thing I think about before I go to sleep." Tim trailed his finger down the side of Abby's face, "I don't want the 'normal' Gina-Marie who bakes cookies and wears J-Lo Glo. I want you. I want this bubbly, eccentric, smart, intelligent, dark haired, gorgeous, tattooed Goth who I love more than anything and anyone in the world."
Abby tilted her head up and smiled, "Really? Promise?" She asked wanting to be sure before she jumped off this cliff she was teetering on.
"I promise." Tim bent down and gently kissed her lips, "Besides, we're off to a good start. We already have a dog." He smiled as he looked over and saw Jethro sleeping peacefully in his dog bed.
"I love you Timmy." Abby smiled.
"I love you Abs." McGee bent down and kissed her again. One arm snaked its way around her torso, the other slipped behind her knees and lifted her off the ground. Tim made his way into his bedroom, feeling elated. She chose. Finally, she chose him.


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Conan Takes the Texas Citizenship Test
Subscribe to 106.3 The Buzz on
Conan O'Brien is spending this week in Dallas in order to celebrate the Final Four, which will be taking place this weekend, and he thinks he's been in Texas long enough that he could pass a Texas Citizenship test. Although before his show came to town there was no such thing as a Texas Citizenship test.
And who better to administer the test than the almost-native-Texan Dirk Nowitzki. Sure he wasn't even born in this country, but after spending his entire NBA season as the star of the Dallas Mavericks, I think he knows a thing or two about being a Texan.
See for yourself if Conan managed to pass the test above.


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The standard features list for the 2011 Avenger does include dual front, side and curtain airbags; anti-lock brakes, traction and stability control; and active headrests. Advanced options like blind-spot detection and parking sensors aren't on the menu at all.
Outward visibility is considerably better than in most other small cars, thanks to a nice, low beltline with extra front and rear quarter-windows to help.
The Dodge Avenger has a good record for safety, and we anticipate that the 2011 model won't be much different.