text:
In a nutshell....
The ridging hoe from the chillington range of premium quality gardening tools comes with handle included and is great for digging ridges or trenches in the garden
Handle Size
Chillington Ridging Hoe ( also known as a Ridging Azada ) is used for making potato ridges, lazy beds or seed trenches for planting seeds and young plants. Sturdy strong and made to last a lifetime but far faster to work with than a traditional spade. Much sought after tool used extensivly by small to medium Organic growers who wouldnt use anything else, comes with a 12 month Chillington warranty.
Why Use A Chillington Ridging Hoe
Lazy beds or potato ridges are still in use to day as a perfect way to grow root crops and allow excess water to drain away. Chillington manufacture this special Hoe for making potato ridges or lazy beds as fast as possible and is many times faster than trying to achieve this with a garden spade. This great tool which is also known as a Pointed Azada is unique in it's shape. With this you can easily form shallow grooves in the soil for seed trenches, dig deeper and wider drainage channels so you can scoop the soil out to form your lazy beds or potato ridges.
This special Chillington Hoe is not really a hard digging garden tool, but more a special Hoe tool for shaping the soil and basically moving your soil around to form the growing environment you require for your root vegetables. It's design allows you to do these tasks with ease and at speeds which can be 3 or more times faster than your traditional garden spade and this is proven. A normal person (man or woman) of just average build can make a 25 feet long ridge or lazy bed in less than 4 minutes. This means a parallel double trench with the soil mounded in the centre 25 feet long by just digging in to the soil and pulling it up and lifting it in to the centre, and this is acheived as fast as you are working backwards at normal working speed with this unique gardening Hoe tool. Now we dare say it could be done faster, but this was just at normal working speed. What a great way to grow your spuds with minimum effort !
This unique Hoe has been used for other uses we are informed by people who have purchased this great tool. One man has told us that it is great for his stoney soil as the pointed blade on this special Hoe is able to get in between the stones when cultivating his vegetable plots. Another happy purchaser told us that he found it great for planting whips (young trees). The thing is with these tools is they have been around for hundreds of years in one form or another and people have discovered they can be used for a whole range of different tasks.
The name Hoe given to these tools is kind of misleading because they are purposely designed gardening/agricultural hand tools and far more useful and important than your normal garden Hoe. Maybe the reason for them being called a Hoe was because that was the name given to a tool head on a long handle? .... Do you gardeners know or have more historic information on these brilliant Hoe type tools? .... If you do please write in and let us know or reply to our special Chillington Hoe tools feature in our October 2012 Blog special. But one thing is certainly for sure and that is that Chillington certainly make some fantastic, robust and made to last great garden tools.
Handle Length: 120 cm (47.5 in)
Head Size: 19cm L x 18cm W (7.5in x 7in)
All our UK deliveries are only £3.95 no matter how many products we deliver anywhere in mainland UK. For heavy items like raised beds or ponds we charge only £7.95 per complete order. We also deliver to other European countries, please see our rates below.
Our delivery fee is an absolute bargain and is far cheaper than any of our competitors, please take this into account when comparing product prices.
Heavy goods deliveries
For heavy raised bed or pond deliveries we charge an extra £4.00 to our standard delivery rate. Our rates below are our standard rates, please add £4.00 for heavy goods. All delivery rates are automatically added to your order when you add a product to your cart.
Where do we deliver to?
We deliver nationwide to the UK, the island of Ireland, Austria, Benelux Countries, Czech Republic, Denmark, Finland, France, Germany, Hungary, Italy, Norway, Poland, Portugal, Spain, Slovakia, Slovenia, Sweden and Switzerland. Please see our delivery rates below:
£3.95 - The United Kingdom and Island of Ireland (Highlands and Islands may incur a surcharge, please contact us on 0044 1788 298 795 for details)
£9.95 - Austria, Belguim, The Netherlands, Luxembourg, Denmark, France, Germany, Switzerland.
£19.95 - Czech Republic, Hungary, Italy, Poland, Slovakia, Slovenia, Sweden.
£24.95 - Finland, Norway, Portugal, Spain.
How long does delivery take?
Stock permitting we aim to dispatch your goods within 1 - 2 working days of receiving your order. The average time taken from order to delivery is 4 - 5 days in the UK and Ireland, and up to 6 working days for France, Germany and the Benelux countries.
Can I track the parcel myself?
When the order has been dispatched we will provide you with a tracking number for your shipment, you will be able to log on to the Parcel Force website and see where your parcel is at any time. You can also call the office on 01788 298 795 or email email@example.com if you need more information.
What If I'm not in at time of delivery?
The driver will leave a note with the depot contact number. Delivery can be arranged for the next day or a later date. The driver will not leave the parcel without a signature however they can leave your parcel with a neighbour if instructed to do so in our notes section at the checkout stage on the website. Alternatively if you are not home after Parcelforce/GLS have attempted delivery on 2 consecutive days they will leave a note to let you know that your parcel has been left at your local Post Office for collection.
I'm ordering several items, do they all arrive at the same time?
All items dispatched at the same time will normally be delivered in one delivery. The exceptions are bulk bags of soil or compost which comes in a separate delivery using a different delivery company.
What if my parcel is damaged or I wish to return the goods I have ordered?
Contact our office on 01788 298 795 and we will arrange collection and refund or replacement of faulty or damaged goods free of charge. We have a 'no quibble' policy on damages and will replace immediately once we receive an emailed photo of the damaged item.
If you wish to return an undamaged item for any reason we do charge a collection fee which may vary depending on the number of parcels, each case is different so please call us to arrange. We promise to keep returns fees fair and as low as possible. To arrange a return please contact our sales team on 01788 298 795
Great customer service is what we are all about. You will never have to worry about damages, the item not being as expected or simply deciding you don't want the item and you want to return it. We have a Free 30 day returns policy on Damaged goods but even if the item is not damaged you can return in for a Refund less a 15% restocking charge at any time within 30 days. We will even arrange collection from you Free of Charge. We can't get fairer than that.
Please note that the goods have to arrive back to us in the same condition that they left us so if you have opened your parcel you must ensure it is well enough packed to make it back to us not damaged.
Damaged Goods Returns
If the parcel is visibly damaged upon delivery, Do Not Sign for the Order. After that just email us on firstname.lastname@example.com and we will do the rest. Obviously it is not always possible to spot a damage in that moment of delivery so don't worry. As soon as you open your parcel if the goods are not as they should be just email us a photo of the issue clearly explaining the problem. We will be back to you within the day with a solution. This is normally to arrange a collection at a time that suits you and arrange for a replacement to be sent out. We have very few damages so we act very quickly. Please note the Photo is important so that we can claim off our couriers.
A Simple Return
So you have decided on receipt of the goods that you simple don't want them. Again simple. Just email us at firstname.lastname@example.com explaining that we want to return your goods clearly stating your name and your order number. We will arrange for collection on an agreed day. Once the goods arrive back in our warehouse and they have been checked as in the condition they left us we will refund you less 15% of the product value. We won't even charge you for the collection. Now it doesn't get any better than that.
European Returns
Customers outside of the UK and Ireland are covered by the damages Returns policy above. If you want to return your goods due to the fact that you no longer want it you simply email us on email@example.com and let us know. You will then need to return your goods to the following address and once it arrives back to us in the condition it left us we will refund you less the 15% restocking charge.
The address for European Returns is:
Quickcrop Ltd – Unit 13 Block A, Flurrybridge Business Park, Lower Foughill Road, Newry, Northern Ireland BT358SQ
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|Musical settings
|Named Person:
|Bertolt Brecht; Bertolt Brecht
|Material Type:
|Clipart/images/graphics, Internet resource, Videorecording
|Document Type:
|Internet Resource, Computer File, Visual material
|All Authors / Contributors:
Bertolt Brecht; Merrill Brockway; Stephan Chodorov; Paul Dessau; Hanns Eisler; James Macandrew; Gisela May; Kurt Weill; Songs of Bertolt Brecht (Television program); Camera Three Productions.; Creative Arts Television (Firm)
|OCLC Number:
|Event notes:
|Filmed in 1972 as a segment of Camera Three.
|1 online resource (1 streaming video (27 min.))
|Series Title:
|Theatre in video.
|Other Titles:
|Gisela May sings Brecht
|produced and directed by Merrill Brockway ; writer, Stephan Chodorov.
Gisela May, star of Bertolt Brecht's East German theater the "Berliner Ensemble" sings songs (one in English, the others in German with subtitles on screen) on texts by Brecht to music by Kurt Weill, Hanns Eisler, and Paul Dessau. May introduces each song with an English explanation.
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Similar Items
Related Subjects:(6)
- Brecht, Bertolt, -- 1898-1956 -- Musical settings.
- Incidental music -- Excerpts.
- Songs with orchestra.
- Songs, German.
- Streaming video -- UML.
- Brecht, Bertolt, -- 1898-1956.
User lists with this item (1)
- German Language DVDs(84 items)
by priscillaseaman updated 2014-03-05

subset: commoncrawl


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If you're going to put in the effort that is necessary to build a fence, it only makes sense to build it out of something that will last. Different species of wood exhibit remarkably different qualities, meaning that some species are great for long lasting fences while others are completely inappropriate.
Black Locust
Black locust is a heavy, hard wood that is very rot resistant. Although it is somewhat difficult to work with when creating fine furniture, fence posts do not require the same level of finish. Black locust should be your first choice in terms of quality, but may be problematic in terms of price and availability.
Cedar is a very commonly used wood for fence posts. Although it is not hard and heavy like black locust and is in fact a softwood, it has a natural chemical in it that is similar to commercial wood preservatives, although not harmful in the same way that they are. Cedar is plentiful in many parts of North America. If you have a property with many small cedars growing on it, you can save a lot of money by simply using cedar cut from your land rather than buying lumber.
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Bald Cypress
Bald cypress grows mostly in the southeast. If you can get your hands on some old-growth bald cypress, you've got some seriously rot resistant wood on your hands. Unfortunately this is hard to get and more recent growth is not as rot resistant.
Spruce works fine for fence posts. Although it will not last as long as naturally rot-resistant woods such as black locust or cedar, it is significantly less expensive and easier to find.
White Oak
White oak would make superior fence posts, although it wouldn't make a lot of sense to use it for this purpose due to its desirability for more refined uses such as interior trim and furniture. White oak is a very hard wood and would last for ages, but its high cost would make it prohibitive for fence posts.
The old timers in the Northeast say that Tamarack lasts "two years longer than stone." If you can find tamarack growing naturally on your land, 6 to 8 inch diameter lengths cut from middle aged trees would produce superior fence posts.
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Wednesday, June 15, 2011
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Josh James, the former founder of Omniture, is dangling $10,000 in a contest to guess the new name of his new startup, which is backed by Andreessen Horowitz and angel investor Ron Conway. James posted a challenge on his personal site this week offering the $10,000 to the first person to figure out the name of his new startup, using a cryptic formula posted on his site. The firm--whose working name is Shacho--said it bought out Salt Lake's Corda Technologies in May, and raised $10M in its first funding round.


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text:
|Publication number
|Publication type
|Application number
|Publication date
|Oct 2, 2001
|Filing date
|Jun 5, 1998
|Priority date
|Jun 5, 1998
|Fee status
|Also published as
|Publication number
|Lisa Yang, Anish Tolia, Roderick Craig Mosely
|Original Assignee
|Applied Materials, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (37), Non-Patent Citations (6), Referenced by (41), Classifications (34), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
The present invention relates to an apparatus and method for forming integrated plug and wire interconnects on a substrate having submicron features. More particularly, the present invention relates to a metallization sequence for forming metal interconnects wherein a barrier or nucleating layer is exposed to oxygen during the sequence.
Sub-half micron multilevel metallization is one of the key technologies for the next generation of very large scale integration ("VLSI"). The multilevel interconnects that lie at the heart of this technology require planarization of high aspect ratio features such as plugs and other interconnects. Reliable formation of these interconnects is very important to the success of VLSI and to the continued effort to increase circuit density and quality on individual substrates and die.
Conventional chemical vapor deposition (CVD) and physical vapor deposition (PVD) techniques are used to deposit electrically conductive material into the contact holes, vias, trenches, or other patterns formed on the substrate. One problem with conventional processes arises because the contact holes or other patterns often comprise high aspect ratios, i.e., the ratio of the height of the holes to their width or diameter is greater than 1. The aspect ratio of the holes increases as advances in technology yield more closely spaced features.
Referring to FIG. 1, a substrate 10 including a hole 11 formed within an electrically insulative or dielectric layer 12 thereon, such as for example, a silicon dioxide or silicon nitride layer is shown. It is difficult to deposit a uniform metal-containing layer into the high aspect ratio hole 11 because the metal-containing layer often deposits on the sidewalls 14 of the holes and across the width of the hole to eventually converge across the width of the hole before it is completely filled, thus forming voids and discontinuities within the metal-containing material. Thereafter, the high mobility of metal atoms surrounding the voids causes the atoms to diffuse and minimize the surface area of the voids forming circular shaped voids as shown in FIG. 1. These voids and discontinuities result in poor and unreliable electrical contacts.
One method used to reduce the likelihood that voids will form in the contact holes, vias, trenches, or other patterns, is to "planarize" the metal at high temperatures. Formation of a continuous wetting layer on the substrate is the key for successful planarization at high temperatures. It has been previously discovered that a thin conformal aluminum film is a good wetting layer for subsequent physical vapor deposition and planarization techniques performed at high temperature (≧350�). One method is the use of a wetting layer deposited using chemical vapor deposition (CVD) techniques, i.e., an aluminum layer, as the planarization wetting layer. Successful CVD Al or Cu deposition has been achieved by initially depositing conformal Ti and TiN layers which function as both a barrier layer and a nucleation layer for improving the CVD layer. Recent experiments show that the Ti and TiN layers do not have to be conformal to improve the deposition and performance of the CVD Al or Cu layer. Similarly, Ta and TaN layers have functioned well as barrier layers and nucleation layers for copper deposition. Successful wetting layers of Ni, NiV, and V have also been used to fill patterns during manufacture of magnetic heads.
Oxidation of metal layers, such as Ti, TiN, Ta, TaN, Ni, NiV, and V, is known to hinder use of the layers for nucleation of subsequent metal layers and can increase the electrical resistance of the combined layers. Thus, successful metallization sequences have typically involved deposition of the wetting layer and subsequent metal layers, e.g., Ti or TiN and aluminum, or Ta or TaN and copper, without exposure to oxygen. The sequential deposition steps can be performed in the absence of oxygen by combining the various deposition chambers on an integrated platform such as the Endura™ processing system which is available from Applied Materials, Inc., of Santa Clara, Calif. However, the various chambers required to perform the deposition sequences operate for significantly different time periods and many of the chambers are underutilized. Arrangement of the various chambers on different integrated platforms would improve productivity except for detrimental exposure to oxygen. Furthermore, oxygen plasma treatment of metal layers, e.g., O2 plasma stuffing of Ti or TiN, and ex situ processes such as furnace annealing and rapid thermal processing (RTP) have known benefits on metal layers, such as enhanced barrier properties, but adversely affect subsequent metal layers, such as by causing deterioration in crystal orientation, grain growth, fill properties, and reflectivity.
Deposition of a thin layer of non-oxidized metal on an oxidized metal layer has been proposed to improve nucleation of the CVD aluminum layer, but requires additional process time and additional deposition chambers. Nucleation of aluminum or copper may be improved if the underlying metal layers, e.g., Ti, TiN, Ta, TaN, Ni, NiV, and V layers, did not contain oxygen near the surface. Thus, there is a need for removing or reducing oxidation of metal layers prior to deposition of a metal layer to fill high aspect ratio contact holes, vias, trenches, and other patterns.
The present invention provides a method and apparatus for forming an interconnect with application in small feature sizes (such as quarter micron widths and smaller) and which may have high aspect ratios. Generally, the present invention provides a method and apparatus for removing or reducing oxidation of metal nucleation or wetting layers, such as Ti, TiN, Ta, TaN, Ni, NiV, and V, by plasma treatment of the surface with nitrogen, hydrogen, or a combination of nitrogen and hydrogen. The treated surface provides excellent nucleation for metallization by CVD or electroplating during subsequent process sequences for filling contacts, vias, trenches, and other patterns.
In one aspect of the invention, a Ti, TiN, Ta, or TaN barrier layer is formed by depositing the metal layer and stuffing the deposited metal layer with an oxygen plasma. Then a nucleation layer is formed on the surface of the barrier layer by plasma treatment with hydrogen, nitrogen, or a mixture thereof, to remove oxygen and form a discontinuous or thin film of Ti, TiN, Ta, or TaN, denoted hereinafter as an ε layer, having a thickness from about a few atoms to about a few hundred Å. The subsequent metal layer deposited on the ε layer is preferably an aluminum (Al) or copper (Cu) wetting layer deposited using chemical vapor deposition techniques or electroplating techniques. The wetting layer may be deposited using PVD or CVD techniques, preferably PVD techniques to improve film quality and crystal orientation of the resulting film. Thus, the wetting layer can be deposited after exposure of the barrier layer to oxygen. The plasma treated ε layer promotes orientation and morphology of the film by producing a self-aligning effect in the film being deposited on the ε layer.
So that the manner in which the above recited features, advantages and objects of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefor not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
FIG. 1 is a schematic partial sectional view of a prior art substrate showing a randomly-oriented, fine-grained, granular deposition layer in an etched contact hole in the substrate with voids, discontinuities and a non-planar surface;
FIG. 2 is a schematic partial sectional view of a substrate processed according to the present invention showing a nucleation layer deposited on the substrate and treated by a N2/H2 plasma;
FIG. 3 is a schematic partial sectional view of the substrate of FIG. 2 showing a conformal wetting layer deposited on the substrate;
FIG. 4 is a schematic partial sectional view of the substrate of FIG. 3 showing a metal deposited at low temperature on the conformal wetting layer;
FIG. 5 is a schematic partial sectional view of an integrated multi-chamber apparatus suitable for performing CVD, PVD, and plasma treatment processes on a substrate; and
FIG. 6 is a schematic partial sectional view of a CVD deposition chamber suitable for performing a plasma treatment process of the present invention.
The present invention provides a method for forming plugs and interconnects for small feature sizes, such as quarter micron widths that typically have high aspect ratios. Generally, the present invention provides a process for forming a plug or interconnect by depositing a metal layer on a plasma treated metal layer, such as Ti, TiN, Ta, TaN, Ni, NiV, and V. The plasma treated metal layer, denoted as an E layer, can be discontinuous. The metal layer can be deposited in two steps, e.g., including a wetting layer, to fill contacts, vias, trenches, and other patterns to form the plugs and interconnects.
In one aspect of the invention, the metal is deposited on a patterned surface of a substrate to form a barrier or nucleation film using PVD or CVD techniques, preferably PVD techniques to provide a self aligning layer on which a highly oriented film can be grown. The barrier or nucleation film may then be oxidized by transferring the substrate to an ex situ process such as furnace annealing or rapid thermal processing (RTP), or may be oxidized by treatment with a plasma comprising oxygen to improve barrier properties. The substrate is then treated with a plasma consisting of nitrogen, hydrogen, or mixtures thereof, to remove oxidation of the surface of a discontinuous or thin ε layer. The plasma treatment is enhanced at sub-atmospheric pressure by dividing the plasma treatment into cycles and exhausting the chamber between the cycles. Next, a wetting layer, such as aluminum (Al), copper (Cu) or other conducting material, is deposited using chemical vapor deposition techniques or electroplating to provide a generally conformal wetting layer. A metal layer, such as Al or Cu, is then deposited at a low temperature, e.g., ≦380� C., on the wetting layer preferably using physical vapor deposition techniques. However, chemical vapor deposition, electroplating or other metal deposition technique known in the field may be used.
FIGS. 2-4 show a cross sectional view of a patterned dielectric 20, such as SiO2, formed on a substrate 21 having the sequential steps of the present invention formed thereon. In accordance with one aspect of the present invention, a thin ε layer 22 is formed on the field of the substrate and in the via 26. Contrary to conventional wisdom, the ε layer can formed after oxidizing the deposited metal by furnace annealing or other oxygen containing processes because the ε layer is treated with the nitrogen/hydrogen plasma to remove oxidation of the surface. In Cu applications and contact applications where the underlying layer is silicon or doped silicon, a continuous barrier layer of TiN is preferably deposited to prevent diffusion of Cu, Al or other metal into the underlying layers. The continuous ε layer is preferably from about 50 Å to about 200 Å in thickness.
Next, a thin wetting layer 28, such as an Al or Cu layer, is deposited using a CVD technique such as a thermal CVD process or electroplating. The wetting layer is deposited on the field and in the contacts, vias, trenches, or other patterned features, to provide good bottom coverage and continuous step coverage in small apertures that may have high aspect ratios. The plugs are then filled using PVD or CVD techniques, preferably PVD techniques such as deposition of a warm PVD Al or Cu layer 30, to provide void-free, low resistivity interconnects. Preferably, the PVD technique is a warm (≦380� C.) metal deposition process which also provides planarization on the field of the structure.
More specifically, the invention will be described below in reference to a method and apparatus to form an aluminum plug and interconnect. However, it is to be noted that the invention is not limited to the particular materials or processes described below. Other materials having similar properties and processes used to deposit these materials may be used to advantage in accordance with the spirit and scope of the invention. First, a thin nucleation layer 22 from about a few atoms to about 200 Å is deposited on a patterned substrate, typically having a dielectric layer exposed. The nucleation layer 22 is preferably comprised of Ti/TiN, but may be comprised of TiN. The nucleation layer 22 may be deposited using CVD or PVD techniques, preferably PVD techniques to enhance the quality of the subsequent films deposited thereon. PVD techniques such as standard, collimated or ion metal plasma (IMP or high density plasma) can be used. IMP provides good bottom coverage in very small high aspect ratio features. The preferred nucleation layer sequence comprises anywhere from a monolayer up to about 200 Å of PVD Ti followed by deposition of anywhere from a monolayer up to about 200 Å of TiN thereon with a total combined thickness of up to about 400 Å. This nucleation layer does not have to be continuous, i.e. the entire patterned surface need not be covered with the nucleating material. A thin, non-continuous nucleating layer enables filling of very small vias.
The substrate can then be transferred to another platform or otherwise exposed to oxygen to oxidize the TiN layer 22. Oxidation of the TiN layer is removed by treatment with a plasma consisting of nitrogen, hydrogen, or mixtures thereof. The plasma is preferably generated by applying from 500 to 2000 W RF at 200 KHz to 16 MHz. The flow of nitrogen preferably ranges from 100 to 500 sccm and the flow of hydrogen preferably ranges from 100 sccm to 500 sccm for 200 mm substrates. The plasma treatment effectively cleans, treat, and/or modifies the TiN surface in 10 to 150 seconds. Preferably the nitrogen/hydrogen plasma is generated in one or more treatment cycles and purged between cycles. Four treatment cycles lasting 35 seconds each has effectively removed oxygen from TiN surfaces that are exposed to an oxygen plasma.
Next, a CVD A1 layer 28 is deposited on the nucleation layer using thermal decomposition of DMAH as the precursor gas. Preferably about 100 Å to about 2000 Å (depending on via size) of CVD Al is deposited conformally over the patterned surface to provide a continuous wetting layer 28 for subsequent fill of the patterned features.
Next, a PVD Al layer 30, or other alloy, is deposited using a warm PVD technique at a substrate temperature less than about 380� C. so that warm Al is deposited on the substrate and then flowed into the contact, vias, trenches, and other patterns. The PVD warm Al process is preferably a low temperature deposition process performed at a substrate temperature of less than 380� C. The PVD process is performed by heating the substrate to a temperature in the range of from about 250� C. to about 500� C. A pressure of from about 0.2 mTorr to about 10 mTorr is maintained and a noble gas such as argon is introduced at a flow of from about 5 sccm to about 80 sccm. A DC bias power of from about 100 W to about 20 KW is applied to the target, while the substrate support and the chamber walls are grounded. An aluminum target is sputtered for about 3000 Ws to about 600,000 Ws.
An AlCu film or other doped material may be deposited over the resulting metal layer to allow migration of the Cu or other dopant throughout the metal layer. The process sequence described herein is particularly suitable for depositing a layer of highly oriented crystals of electrically conductive material into high aspect ratio contact holes and vias etched through insulative layers (such as silicon oxide, phosphosilicate glass (PSG) or borophosphosilicate glass (BPSG) layers).
The planarized metal PVD layer is preferably formed at a process temperature greater than about 150� C., most preferably greater than about 250� C., but less than about 380� C. To achieve the planarization of the metal film, the PVD metal film preferably immediately follows deposition of the wetting CVD metal film. The grain growth of the PVD metal layer formed at temperatures greater than about 250� C. exhibit grain growth which absorbs the nodules or other defects that are formed on the field of the substrate during CVD metal deposition to form a highly oriented metal blanket layer. The warm PVD metal layer may include trace amounts of copper or other dopant.
A schematic of a multichamber processing apparatus 35 suitable for performing the CVD, PVD, and plasma treatment process steps of the present invention is illustrated in FIG. 5. The apparatus is an "ENDURA" system commercially available from Applied Materials, Inc., Santa Clara, Calif. The particular embodiment of the apparatus 35 shown herein is suitable for processing planar substrates, such as semiconductor substrates, and is provided to illustrate the invention, and should not be used to limit the scope of the invention. The apparatus 35 typically comprises a cluster of interconnected process chambers, for example, CVD and PVD deposition and rapid thermal annealing chambers.
The apparatus 35 preferably includes at least one enclosed PVD deposition chamber 36 for performing PVD processes, such as sputtering. The PVD chamber 36 comprises a sputtering target (not shown) of sputtering material facing the substrate. The target is electrically isolated from the chamber and serves as a process electrode for generating a sputtering plasma. During the sputtering process, a sputtering gas, such as argon or xenon, is introduced into the chamber 36. A DC bias is applied to the sputtering target, and the support supporting the substrate in the chamber is electrically grounded. The resultant electric field in the chamber 36 ionizes sputtering gas to form a sputtering plasma that sputters the target causing deposition of material on the substrate. In sputtering processes, the plasma is typically generated by applying a DC or RF voltage at a power level of from about 100 to about 20,000 Watts, and more typically from about 100 to 10,000 Watts, to the sputtering target.
The apparatus also comprises a CVD deposition chamber 40 (shown in FIGS. 5 and 6) having surrounding sidewalls 45 and a ceiling 50. The chamber 40 comprises a process gas distributor 55 for distributing delivering process gases into the chamber. Mass flow controllers and air operated valves are used to control the flow of process gases into the deposition chamber 40. The gas distributor 55 is typically mounted above the substrate (as shown), or peripherally about the substrate (not shown). A support 65 is provided for supporting the substrate in the deposition chamber 40. The substrate is introduced into the chamber 40 through a substrate loading inlet in the sidewall 45 of the chamber 40 and placed on the support 65. The support 65 can be lifted or lowered by support lift bellows 70 so that the gap between the substrate and gas distributor 55 can be adjusted. A lift finger assembly 75 comprising lift fingers that are inserted through holes in the support 65 can be used to lift and lower the substrate onto the support to facilitate transport of the substrate into and out of the chamber 40. A thermal heater 80 is then provided in the chamber to rapidly heat the substrate. Rapid heating and cooling of the substrate is preferred to increase processing throughput, and to allow rapid cycling between successive processes operated at different temperatures within the same chamber 65. The temperature of the substrate is generally estimated from the temperature of the support 65.
The substrate is processed in a process zone 95 above a horizontal perforated barrier plate 105. The barrier plate 105 has exhaust holes 110 which are in fluid communication with an exhaust system 115 for exhausting spent process gases from the chamber 40. A typical exhaust system 115 comprises a rotary vane vacuum pump (not shown) capable of achieving a minimum vacuum of about 10 mTorr, and optionally a scrubber system for scrubbing byproduct gases. The pressure in the chamber 40 is sensed at the side of the substrate and is controlled by adjusting a throttle valve in the exhaust system 115.
A plasma generator 116 is provided for generating a plasma in the process zone 95 of the chamber 40 for plasma treatment of the TiN layer or plasma enhanced chemical vapor deposition processes. The plasma generator 116 can generate a plasma (i) inductively by applying an RF current to an inductor coil encircling the deposition chamber (not shown), (ii) capacitively by applying an RF current to process electrodes in the chamber, or (iii) both inductively and capacitively while the chamber wall or other electrode is grounded. A DC or RF current at a power level of from about 750 Watts to about 2000 Watts can be applied to an inductor coil (not shown) to inductively couple energy into the deposition chamber to generate a plasma in the process zone 95. When an RF current is used, the frequency of the RF current is typically from about 400 KHz to about 16 MHz, and more typically about 13.56 MHz. Optionally, a gas containment or plasma focus ring (not shown), typically made of aluminum oxide or quartz, can be used to contain the flow of process gas or plasma around the substrate.
Copper can be deposited on substrates to form lines and interconnects using electroless plating. First, a barrier layer is formed on a patterned substrate using a PVD or CVD method. The barrier layer is comprised of TiN and prevents the diffusion of Cu into the silicon dioxide or other dielectric. In addition, the barrier layer serves as a nucleation layer on which the copper in the electroless plating process is grown. Once the substrate has a barrier layer and a nucleation layer formed thereon, the substrate is introduced into a plating bath where deposition proceeds. The copper is preferably deposited from a tetra-methyl-ammonium-hydroxide (TMAH)-containing solution. The components of one electroless deposition solution are presented below in Table 1.
Quantity (Ranges Only)
Supply copper ions
Supply electrons
Complexing agent
Reducing agent
(or alternatively
glyoxylic acid)
complexing agent
Affects morphology
Reduces surface tension
Copper deposited from a TMAH-containing solution has been found to yield good quality thin films with a resistivity as low as 1.7 μΩcm. This electroless plating deposition process is further described in a paper entitled "Electroless Copper Deposition for ULSI", Thin Solid Films 262 (1995) pp. 93-103.
One example of the present invention was performed using two separate ENDURA� platforms available from Applied Materials, Inc. The first platform comprised an IMP titanium chamber and a coherent TiN chamber. The second platform comprised a CVD plasma treatment chamber, a CVD Al chamber, and a PVD Al chamber. A silicon wafer having sub 0.30 μm contacts, vias, trenches, and other patterns, having an aspect ratio ≧4:1 was introduced into the system. About 400 Å of titanium was deposited on the patterned wafer in the Coh—Ti chamber. The Ti serves as a getter material for native oxides formed on the bottom of the interconnect. Next, the wafer was moved into the TiN chamber where 150 Å of TiN was deposited on the Ti layer to provide the barrier and ε layer layers. Next, the wafer was removed from the chamber for 30 minutes to oxidize the TiN layer.
The wafer was then treated with N2/H2 plasma for 140 seconds using four cycles of 35 seconds each to form the ε layer on the surface of the barrier layer. Reaction products were removed from the chamber after each plasma cycle. The nitrogen flow was 200 sccm and the hydrogen flow was 300 sccm. Plasma was generated with 750 W RF power at 350 kHz. The wafer was then transferred to the CVD Al chamber where 900 Å of Al was deposited on the restored TiN. Finally, the wafer was moved into the PVD Al chamber where 9000 Å of Al was deposited using 2 kW of power for about 260 seconds at a wafer temperature of about 450� C. Electron micrographs show good step coverage and void free fill of contacts, trenches, vias, and other patterns.
For comparison, Example I was repeated without the N2/H2 plasma process steps. Electron micrographs show significantly reduced fill performance for the contacts, vias, trenches, and other patterns, likely resulting from reduced nucleation of the CVD Al layer on the oxidized TiN layer.
While the foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims that follow.
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|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Jun 5, 1998
Owner name: APPLIED MATERIALS, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YANG, LISA;TOLIA, ANISH;MOSLEY, RODERICK CRAIG;REEL/FRAME:009226/0239
Effective date: 19980602
|Nov 12, 2002
|Certificate of correction
|Apr 20, 2005
|Maintenance fee reminder mailed
|Oct 3, 2005
|Lapse for failure to pay maintenance fees
|Nov 29, 2005
|Expired due to failure to pay maintenance fee
Effective date: 20051002


text:
"In a word....dire!"
About: Royal Berkshire Hospital Royal Berkshire Hospital Reading RG1 5AN
Posted by John
I am writing this review whilst still at the hospital.My girlfriends waters broke over 62 hours ago and we are still waiting to go into the delivery suite!We rang the hospital once her waters broke and were told that she had to come into the hospital as if she didn't start having contractions within 24 hours they would induce her.The wait goes on!We have not had any communication from the staff and the only information we gained was when we enquired ourselves!We have been told there are no midwives available which for a maternity ward is unacceptable......and as for the hospital food my girlfriend is supposed to be eating...it can hardly be called food.Our next child will not be born at this hospital.
Response from Royal Berkshire Hospital 12 months ago
We are very sorry to hear of your recent experiences of maternity services but thank you for feeding back to us.
Our aim is to induce women after 24 hours if they have ruptured membranes and if they do not go into labour spontaneously. When there are delays in the induction either due to an increased number of women on the Delivery Suite or if we are not able to provide a midwife for 1:1 care for women being induced, we should keep women and their partners updated and we apologise if this was not the case.
It is however difficult to give a definite time on when the induction can proceed due the unpredictable nature of the demand on our service. On 28th July the Delivery Suite was particularly busy which did cause some delays for women being induced.
We are sorry that you experienced delays and that we did not communicate effectively with you and your partner. We have reviewed our induction of labour pathway and will be introducing some changes which will reduce delays and therefore improve experiences.
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Maxell CB-ORANGE Orange Color Buds EarbudsItem#: YYI1-U45186 | Model#: 190542
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Question: Trends in Managing the Organization Detail three trends in the
Trends in Managing the Organization Detail three trends in the law related to corporate governance. Discuss whether you believe these trends, taken together, reflect an increase or decrease in legal risk associated with managing the organization.
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View Solution:
Answer to relevant QuestionsWhy does dissolution of a business organization not necessarily impact that organization's business activities? This chapter discusses five reasons for having administrative agencies. Give an example for each reason. Describe four types of costs that businesses must absorb due to the regulatory process. (a) An ice-cream franchiser requires its franchisees to purchase all ice cream, cones, and syrups from the franchiser. Does this contract violate the antitrust laws? Why or why not? (b) Would your answer be the same if the ...W.J. Howey Company and Howey-in-the-Hills Service Inc. are Florida corporations under common control and management. Howey Company offers to sell to the public its orange grove, tree by tree. Howey-in-the-Hills Service Inc. ...
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text:
Why America Should Not Expand Its Territory
Annexation of Texas
- Texas should not added to the Union of states because it will cause foreign conflict
- The British have their eye on Texas and if British abolitionists are successful in freeing blacks in Texas, they could inflame the states of the South
- Mexico threatens war if the U.S. should acquire Texas, because the people of Mexico still see Texas as their possession
- Annexation of Texas will add to the slavery conflict
- Many Texans are slaveholders, so admitting Texas to the Union means that slavery will be enlarged in the U.S., which will anger Northerners but please Southerners
The Oregon Question
- Indians could become angered if the U.S. acquires Oregon
- The Indians' British friend would be gone. If the Americans swoop in and take Oregon, the British will have to vacate. Britain's most important colonizing agency, the far-flung Hudson's Bay Company has been trading profitably with the Indians of the Pacific Northwest for furs. The Indians will be losing a valuable trading partner and, possibly, a protector.
Mexican-American War
- Lives are lost to claim territories through war with Mexico
- The U.S. had an inadequate number of troops, the Mexicans had more troops, our troops will had to trek through mountainous terrains, and disease ravaged our troops in Mexico
- American relations with Latin America are changed as a whole
- After the war, Mexico began to condemn people of the U.S. as greedy, untrustworthy bullies who could deprive Mexicans of their very own homeland next
Supporters of My Position
- The Whig party was also against the ideas of the Manifest Destiny. Abraham Lincoln and Henry Clay were leading Whigs that spoke out against the Manifest Destiny. People of the Eastern seaboard also supported my position, because they feared that expansion would change the amount of influence they had on international affairs. Northern states feared territorial expansion, because that could also mean expansion of slavery.


text:
|Property type
|Minimum Stay
|2 nights
Budget friendly 'Historic cabin radiates cozy Tahoe Charm.' No pets, non-smoking.
This cabin has a front room living area with gas-fireplace and adjoining study wi tv, kitchen nook, and laundry room; master bedroom with queen bed.. Adding to the charm is the fully carpeted #2 bedroom/with tv, Large fenced lawn. Perfect for family to enjoy Tahoe's scenic views, water and mountain sports, and the casinos year round.
Fully furnished with large fenced yard and driveway parking, 1 vehicle only. WiFi, Cable TV basic, DVD/Sterio, Washer/Dryer, Stove, Microwave, and BBQ, wood picnic furniture for warm weather outdoor family events.
This property is located within one-quarter mile of the 'Y' shopping center, two miles to Tahoe Keys Marina and the lake, Historic Camp Richardson/Kiva Beach and Mount Tallac, hiking, lakefront dining, water-sports and swimming, skiing, snow boarding and ice skating. Only four miles to Edgewood Golf Course, Heavenly Village Ski Resort and the new Heavenly Village Mall with Cinema's, Arcades, Shopping and Stateline Casinos. Two miles to the Tahoe Queen at SkiRun Blve,CA. and/or the Dixie from Zephyr Cove,NV.
Keywords: Cabin,bungalo
Larry is an avid skier and ski instructor at Heavenlt Resort. Donna is an artist working in oils and water colors. She likes plein air painting in spring and summer. Larry likes to ski and snowshoe in winter. Summer is fishing and hiking in the mts around Lake Tahoe.
Larry and Donna Reid purchased this cabin in 1994
We retired and moved to Lake Tahoe and the cabin was too small for us to live in full tlime. We also use it for visiting family and friends.
In a very woodsy, quiet, family neighborhood, away from casino bustle. Has markets, restaurants, and shopping close.
If you decide to rent our cabin we hope you will take advantage of all the winter time activities Lake Tahoe has to offer. Such as: hiking, cycling, lake fishing, cross country and down hill skiing/boarding, snow shoeing and snow mobiling are among the many activities available to you. Fine dinning at the many restaruants here at the lake. And of course Nevada Gaming.
Very, very good experience overall. The cabin had a very rustic experience and reminded of cabin trips when I was a kid. The cabin is a short (10 min) drive to Eldorado Beach which is nice if you are like me like to avoid the crowd while you are at your cabin relaxing. The neighborhood was also very nice if you like to walk and ride bikes. We did forget some items at the cabin and were contacted by both the housekeeper and the owners. The owners were also kind enough to mail us our items as we were too far to return and retrieve them. This gave me a little extra peace of mind and I would gladly stay again.
We had a great family stay at the cabin. It is very pretty, very clean, and very well equipped with everything we needed. Has a real charm!
The place was easy to find. This is a nice, older designed home. We had a total of 5 people stay and the space was comfortable. I liked that in addition to having everything we needed, there were instructions/notes around the house and the owners were very accessible and accommodating. The only drawback was that we stayed in the summer, and since there's no air conditioning it was a bit warm when we got home after a long day of activities... Even with the several fans they had available. But I would definitely plan better next time and stay during a cooler season. Very pleased!
This is a charming house, full of character, thought out in great detail, with a cabin feel, a gorgeous fireplace, a luxurious bathroom and perfect location for skiing, dining, exploring. The owners are super nice too. We loved!
We loved the Cabin! It was a very clean and well maintained. The description was very accurate. It has everything we needed. Everything is very organized and it had more than enough space for 4 people. The owners were very helpful and responsive. We never met them but everything is so organized and so well taken care of that it all goes very smoothly. I would recommend this property.
I recently rented this property along with my Husband and three young children. The owners made the rental process so easy. We were extremely pleased with the overall quality of the cabin and its amenities. It's clean and excellently maintained. The space is utilized very well. The kitchen was roomier than expected. The loft was spacious, and the beds were extremely comfortable. We all slept great. The bathroom is nice and updated. My kids were happy to find a box of toys in one of the closets. I was especially pleased to see how abundantly equipped the entire cabin was,and the decor was enjoyable and fun to look at. (My personal favorite: the map of the Tahoe area - including ski runs - in the laundry room.) The internet is very easy to access and fast too. Not only would we rent this place again next time we visit South Lake Tahoe, but we would highly recommend it as well. Thank you Larry and Donna! :)
Golf and Miniature Golf/Summer Carnival, Canoeing, Ice Skating, Sledding and Shopping, Trail Maps are available at the Chamber of Commerce or Visitor's Center (see attached link)
|Rental Period
|Minimum Price
|Additional Nights
|Weekend Night
|Event Price
My Standard Rate
2 night minimum stay
for 2 nights
|Cleaning Fee
|Damage Deposit


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'The City & The City' is an intoxicating blend of genres that crosses one great divide into another and back again with seamless beauty. An enriching tale that's utterly unique. Borlu of Beszel's Extreme Crime Squad is a sharp protagonist who walks on a knife edge between worlds. Accompanied by a like-equivalent from Ul Qoma, and a sidekick in Corwi, the three set out to solve a murder mystery which threatens to disrupt peace in both the cities which occupy the same space.
The overlapping city sprawls have a past and present vibe - except where ghosts may wonder, real people walk the streets unseen by others from the 'neighbouring' city in fear of breach. Adding to the complex concept, is what lies between Beszel and Ul Qoma, Breach - and perhaps something more sinister and occult-like in Orciny.
Much like a thread, the plot unravels distorting the perception of reality - two, three, four - or more cities possibly exist within the same space. The crime - murder, turns terrorism, civil unrest through unification groups and conspiracies, artifact smuggling, to government cover-ups and schemes beyond dimension. Mieville makes the difficult read believable and pulls off a remarkable concept without flaw. 4 stars.


text: Seller: parts-and-bargains (39,857) 99.7%, Location: Temecula, California, Ships to: Worldwide, Item: 281752443434 This auction is for a Baldwin 90674-030 5" House Number '4' POLISHED BRASS. Solid forged brass. New in Package! How I got this item: A large construction company went bankrupt and their assets were sold at auction. I bought a large lot of their items. Material: Brass, Color: Polished Brass, Maker: Baldwin


text:
13" Mystical Funny Tree Home Garden Statue Sculpture Figurine
Design Toscano
Legend has it that English estates employ watchful garden hobgoblins to gobble up whatever trolls threaten to overtake home or garden. We can't vouch for the mystical effectiveness of this hand-painted quality designer resin garden sculpture, but we do know that its foot-tall presence promises to lend a bit of magic to your home or garden. Another quality Design Toscano-exclusive garden statue! 10"Wx10"Dx13"H. 6 lbs. Fits on Medium plinth (NG314105), Large plinth (NG314100), Laurel plinth (KY3917), Rococo plinth (KY0631) and Grande Garden plinth (JE122359) Also fits on our Grotto (KY72)
Returns Policy
You may return most new, unopened items within 30 days of delivery for a full refund. We'll also pay the return shipping costs if the return is a result of our error (you received an incorrect or defective item, etc.).
You should expect to receive your refund within four weeks of giving your package to the return shipper, however, in many cases you will receive a refund more quickly. This time period includes the transit time for us to receive your return from the shipper (5 to 10 business days), the time it takes us to process your return once we receive it (3 to 5 business days), and the time it takes your bank to process our refund request (5 to 10 business days).
If you need to return an item, simply login to your account, view the order using the 'Complete Orders' link under the My Account menu and click the Return Item(s) button. We'll notify you via e-mail of your refund once we've received and processed the returned item.
We can ship to virtually any address in the world. Note that there are restrictions on some products, and some products cannot be shipped to international destinations.
When you place an order, we will estimate shipping and delivery dates for you based on the availability of your items and the shipping options you choose. Depending on the shipping provider you choose, shipping date estimates may appear on the shipping quotes page.
Please also note that the shipping rates for many items we sell are weight-based. The weight of any such item can be found on its detail page. To reflect the policies of the shipping companies we use, all weights will be rounded up to the next full pound.


text:
With First Tutors: Music you can search for a Stratford-upon-Avon recorder teacher. Recorder lessons are an excellent way to learn a stimulating new hobby, acquire a new skill and attain confidence with recorder. Try our site to search for Stratford-upon-Avon recorder teachers and choose which matches your requirements so you can start your recorder tuition in Stratford-upon-Avon straight away!
First Tutors: Music is the only place to find Stratford-upon-Avon recorder tutors in the UK, helping you find Stratford-upon-Avon recorder lessons close to home and Stratford-upon-Avon tutors to help with any instrument such as piano, violin or guitar. We can help you find Stratford-upon-Avon recorder tuition or a one-to-one Stratford-upon-Avon recorder tutor to prepare for recorder grades and develop your recorder skills! We order Stratford-upon-Avon recorder teachers local to you according to their tuition charges and distance from you.
If you are a recorder tutor and would like to offer recorder tuition services in Stratford-upon-Avon or throughout the UK, please register with First Tutors: Music or find out more about us here. Becoming a Stratford-upon-Avon recorder tutor is a fantastic way to improve your own skills through giving recorder tuition while helping someone else, all in your local Stratford-upon-Avon area!


text:
Microsoft's perfect timing
Microsoft has always had excellent timing. They know when to announce a product; they know when to begin grass-roots movements to build hype for a product; they know when to create an alliance; they know when to break an alliance. They have missed some marks, that's true. They almost missed the internet boat, but were able to quickly recover with the licensing of Spyglass, Inc's browser. Microsoft's best timing, though, has always been when and where to spread Fear, Uncertainty, and Doubt.
And that brings us to Novell.
The marketing of an idea
The secret to proper FUD is in how it's marketed.
Marketing itself is all about ideas: product A is superior to product B, and will bring you good health and make you irresistible to the beautiful people of your choice. The competitors' products will cause your hair to fall out and your beer to lose its fizz. These are all ideas more powerful than the product or service being sold.
The best marketing is indirect. People are jaded, and don't believe the claims made in advertisements. These days, we have faux-grassroots campaigns, viral marketing, and marketing disguised as news items.
With this in mind, let me ask a question:
What's the purpose of the recent announcement of the deal struck between Microsoft and Novell?
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Walks Through Regency London(2014)
A non fiction book by Louise Allen
These ten self-guided walks will guide you through the London of the "long Regency" - the last years of the 18th century and the first quarter of the 19th century. Despite fire, war and redevelopment London's long history can still be found, sometimes intact, sometimes only as a ghost. These walks will take you to parks, prisons, palaces and the homes of the famous and infamous. Shop with Jane Austen, stroll with Beau Brummell or experience the horrors of a 19th century hospital as you follow routes that cover Mayfair, Marylebone, Soho, St James, the City and Southwark. Illustrated with prints of the period.
Similar Books by other authors...
Georgette Heyer's Regency World
Jennifer Kloester
The Debutante's Daring Proposal
(Regency Bachelors, book 3)
Annie Burrows
The Girl with the Make-Believe Husband
(Rokesbys, book 2)
Julia Quinn
The Wicked Cousin
(Rockliffe, book 4)
Stella Riley
Used availability for Louise Allen's Walks Through Regency London
See all available used copies of this book at Abebooks UK or Abebooks US
Kindle Editions
January 2014 : USA, Canada, UK Kindle edition
|Title: Walks Through Regency London
Author(s): Louise Allen
Availability: Amazon Amazon UK Amazon CA
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