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mr moonlight
Lives in Miami Beach, United States
Works as a Graphic Designer/Photographer
Joined on Dec 7, 2006
lambert4: This is a great bag, I have a similar set up now that was an apparel sample bag from me sales days. It is a huge set up but that is what is needed to accommodate and protect the essentials. The $599 is the toughest pill for me to swallow, that is Pelican case territory for expense.
Actually, it's beyond Pelican case territory for expense. You can get a slightly larger Pelican case for $130 less. A soft case does have it's place, but I agree, it's hard to justify a purchase like this when you can get a more spacious Pelican for a lot less.
Would there be an issue if the photographer had a model airplane that he flew over the spot while he took the shot? Or secured a small model with clear fishing line?
I'm not saying what the photographer did was right, but where do we draw the line between what is real and fake, discovered and staged? Every photograph has some level of influence by the photographer be it as simple as framing or as in depth as bringing in lighting and models to create a scene.
Avedon's Dovima and the Elephants is one of the most iconic images in all of photography, yet was entirely staged. Does this fact make it any more or less of an image than Bresson's Derriere la Gare Saint-Lazare? How much darkroom work was done on both these images?
Looks a bit crowded when it comes to dials and buttons with a lack of a dedicated shutter speed and aperture dial. Seems kind of pricey for a m43 as well.
All in all a nice looking camera and one feature I absolutely love is the ability to flip the screen all the way around. It's not a new feature by any means, but it's a nice touch to be able to hide the lcd away.
attomole: I think its too crowded market now for this spec, Panasonic and Sony have more attractive offerings.
As Snapchick said of the D500 , I am afraid it might be too little to late.
Wait for clearance prices and it will be a cracking little carry everywhere camera though!
Wow, this looks like an awesome little camera. An APSC sensor with a fixed wide lens wide, compact body, and manual dials! I love my X100, but sometimes, for just hanging out with friends I need something a bit wider and smaller. This would be perfect. I don't really see much else on the market that gives you all these specs. I don't see how one can compare an APS-C to an M43 camera. Different format.
Reactive: Isn't this a classic case of a solution looking for a problem? I wasn't aware my existing UV filter's tiny weight was a problem - it's insignificant compared with the lens weight. I wasn't aware it needed to be 10x stronger, as I've never been stupid enough to smash it against objects. I wasn't aware it needed to repel water and oil, since an occasional clean with IPA keeps it spotless. I wonder if Sigma will charge 'Art' prices for their completely clear glass filter? If so, they should move into homeopathy. Perhaps their next product will be a military-grade nuclear-hardened titanium lens cap?
I agree with AbrasiveReducer. Hoya makes good quality filters. I've been using Hoya and B+W for years and while B+W has a slight edge, it's not by much. Optically it's tough too see the difference even with a side by side comparison.
Akos Kozari: I'm thinking on what Oskar Barnack would say about creating a machine that not aiming to make the photography as easy as possible. I think it does not fit to the original philosophy... It is my 2 cents. On the other hand: i can confirm: Leica has a feeling and i would be happy to own one. Now if i would have money i would rather choose Fuji X-T1 instead. That follows the philosophy i meant...
For a photographer who shoots in manual mode, this is about as simple as it gets. If it was smaller, lighter, monochrome, and not so expensive, I'd pick one up.
Jan Bohme: Looking into the forum section of dpreview for the first time in a long while, I immediately realised why I quit posting in the first place: There is nothing ever as pig-headed as a photographer involved in a discussion who is wrong. :)
The legal issue is crystal clear: If the animal, as Slater claims, has pushed the trigger and pointed the camera by its own free will, that is the core creative moment, and Slater can't have copyright. Because it is not human, nor can the monkey. If we just discuss de lege lata - i.e. discuss the law as it stands - there is nothing more to discuss. While it is technically correct to say that the rulings of the US Copyright Office are only legally binding inside the US, there is nothing bizarre or outlandish in neither the US copyright legislations, or the specific ruling at hand, in this matter. The ruling will be the same in most, and very possibly all, countries signatory to the Berne convention.
@mariuss. That's the creative process leading up to "the creative moment" not "the creative moment". If I'm on vacation and ask a stranger to take a photo of me, I'll choose the place, lens, focal distance, settings, etc... but "the creative moment" still lies with the stranger who framed the shot and pressed the shutter. It would be the stranger who owns copyright. If all my work setting up the shot amounted had any more than a minimal effect on the outcome, those vacation shots by strangers would have actually come out half decent vs. utter crap.
vFunct: The US Copyright office is going to delete this, since it's only a draft statement.
Photographs are never created by nature. The other examples that the Copyright office gives of natural works - elephants painting, driftwood shapes, rock grain formations - are all naturally contained works. They don't have any human involvement in its output.
Meanwhile, a photograph always relies on human involvement in its output - someone has to setup, process, and print/publish it.
It is not possible for nature to produce a photograph on its own.
The monkey did author the photo. You're not going to tell Stephen King he doesn't own the copyright to a book he's written just because publishers, printers, copy editors, designers, marketers, and distributors put much more time into creating his book than he did. It doesn't matter who hands the elephant a brush, processes a photograph, or rents the gear, it's the entity that frames the shot and presses the shutter that gets the copyright.
If Slater wanted copyright, he should have said that he planned for the monkey to take his camera with the hope that it would take a selfie. Then it would have been him directing a photoshoot vs. an accident.
spencerda: Assuming that the monkey REALLY took it's own photo, I would agree Mr Slater has copyrights.
One he owns the camera and the memory card and process the pictures.
Two We as humans do not give animals the right of ownership.
Three We as humans have ownership over animals and pets, we are held responsible for anything they might do, so there for Mr Slater has ownership of the copyright, laughing...
Mr. Slater did not own the monkey and it doesn't matter who owns the equipment.
Digital Mike0697: My thoughts on this subject would be that Zoo owns the pictures not the photographer. Why I say this is because they owns the primate, the photos where taken on private property and the list goes on.
Yes the photographer owns the camera, but my impression on the copyright laws, you have to physically taken the photos yourself not anyone else or in this case a animal (primate). True the photographer may have setup the camera to take pictures, but in this situation the Zoo owns images.
I have a question, If the photographer owns the rights pictures, should he/ she ask the Zoo to sign a modeling release and will the Zoo be compensated to allow the photographer to make money off of images?
Slater may have chosen the lens and set exposure, but I don't see how that would hold up as creative authorship. So a friend asks to borrow my camera. I select the body, lens, and preset the exposure to F1.8, 1/800, and auto ISO since my friend doesn't know what he's doing, but I think those settings will make for a few good portraits as my friend is trying to learn portrait photography. I also instruct him to use his girlfriend as a model, how he should pose her, where he should take the shot, how to frame it, and to use the window in his living room to light it. The next day he comes back with some absolutely stunning shots using my settings, camera gear, the subject I chose, and instructions. Should I have some ownership of the photos since I had so much creative input?
Boss of Sony: THIS SHOULDN'T BE ABOUT MONEY. THE PHOTOGRAPHER SHOULD BE GRACIOUS, BE A GENTLEMAN, AND SAY "ALL HUMANS MAY SHARE THESE WONDERFUL PHOTOS TAKEN BY A MONKEY". By suing, he is showing that he is cheap, nasty, and selfish. Handing a camera to a monkey is not a respectable way to make money.
Handing a camera to a monkey is a respectable way to make money. That would have made Slater "the photographer". It's all in the planning. If Slater purposely handed the camera to the monkey with the plan that the monkey would take a few selfies, then Slater would own copyright. If you direct an assistant to snap the shutter for you, your assistant doesn't suddenly own copyright. If your assistant stole your camera and took some shots, your assistant would own copyright.
SushiEater: Monkey did not post the photo, human did. How he obtained the photo is irrelevant because it was his camera after all. Wikimedia posted the photo knowing that it was copyrighted and yet posted it anyway.
A trail camera has to be purposely set up by someone to take shots as the elephant walks by. Slater did not set up the shot. His camera was basically stolen from him, the thief took a bunch of selfies, then Slater was able to get his camera back. Now if the thief was human, we wouldn't be having this conversation.
kerensky20: The photos only exist as a result of the photographer's intervention in nature, which would mean that the photo would not have existed if the photographer did not set out in the first place to document the monkeys.
I do support that the photographer reserves every right to the photos.
PS: Saying that the photo is the work of the monkey is as good as saying every winning lottery ticket's monies belong to the computer that rolls the numbers every draw. There is causation that resulted in the effect.
You're using the same argument for both sides. What if the photographer handed his camera to a tourist walking by so the photographer could get a shot of himself, at which point the monkey grabbed the camera from the tourist who didn't want to battle a monkey for a camera? Would the tourist then own copyright?
B1ackhat: That is a completely ridiculous defense to copyright infringement. If I set my camera up on a tripod remotely controlled by my phone and one of my dogs licks the screen thereby triggering the shutter, the photo then becomes the property of no one. That's ludicrous.
The difference would be that you set up the shot. In this case, the monkey set up the shot. Now if your dog set up the tripod, set up the camera to be remotely controlled by your phone, then licked the screen, it would be your dogs property.
christiangrunercom: I'm sorry, but calling the Phantom a serious platform is a joke. And calling the reviewed quads for camera-platforms, well, no, they are trainers and toys.
So when is a platform a "serious platform"? When it can lift a gimbal providing close to perfect stability with no vibration and ability to lift a camera providing pro grade footage with room for postprocessing.
I agree. If you can attach a GoPro, you can get results of high enough quality for a lot of professional applications. As long as you have a reasonable amount a stability that can be corrected in post, you can do some pretty serious work with a GoPro. It may not work for all professional applications where aerial video is needed, but neither does any other setup.
ManuelVilardeMacedo: The images look slightly bleached and lacking contrast. From my personal exprience, converters tend to do this. It's a great idea on paper, but the results aren't that good.
The samples look just fine to me. Remember we're looking at x100s RAW files processed using defaults in ACR, so you can't expect really punchy colors or high contrast. You will get images like this with or without the converter.
Like lenses, there are good and bad converters out there. One of the reasons Fuji's converters are so expensive is that they are absolutely fantastic (assuming that the Tele is of similar quality as the wide angle). I've been using the wide angle converter for awhile now and there is no noticeable loss of light or IQ even with heavy pixel peeping. I was also skeptical at first, but once I tried the WCL, I was convinced.
bobbarber: Disclaimer: I'm a hypocrite, because I've bought converters for compact cameras before.
Comment: If you're buying converter lenses for your compact or fixed-lens camera, isn't that telling you that you need/should have bought an interchangeable lens camera in the first place?
If there was an ILC with the same specs as the X100 with a 35mm attached, then yes. So far we don't have anything that comes close without giving up a key feature... Built in hybrid viewfinder, leaf shutter, APSC sensor or compact size. I have an XP1 which is great, but doesn't in any way replace my X100 and WCL. It's larger, no built in flash, no high speed sync, has larger lenses, no leaf shutter and you can't compare the X100's size when you just need a 35mm.
The converters are simply a great way to expand on a high quality compact fixed lens camera without adding a lot of bulk or giving up some of the best features of the X100. Sure, there's a slight loss in quality and light, but I know from the WCL that it's undetectable and you don't have to fiddle with swapping lenses without a place to put one down or worry about getting dust on your sensor.
Lloyd709: disappointed only works for CS6 and upwards - couldn't stand the cropping tool on CS6 and don't want to go monthly so sticking with CS5 - I guess it's the first of many plugins I won't be able to use!
Yeah, it took a little getting used to at first, but now I also love the new crop tool.
headofdestiny: The MTFs look like we won't be giving too much up in the way of IQ.
Looks like it's going to perform at the same level of the WCL.
Hugo808: Great, that'll save you taking a step closer...
The whole zoom with your feet concept is not nearly as effective when using wide to normal lenses with portraits since small changes in distance will result in much more drastic differences in facial compression. The difference between 35 and 50 is quite dramatic whereas the difference between 85 and 100 in minimal.
|Fangorn Forest by cand1d
from Moss
|Yosemite Falls with Moonbow by Jonathan Shapiro
from Best Landscape of the Week 4


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[Disclaimer: This article is satire, or what we used to call "fake news" before actual fake news started poisoning the political discourse!]
Mitt Romney Wants New Tour Bus Equipped with Gaydar
According to reliable sources, Mitt Romney is about to get a brand new tour bus, as his old one is falling apart and starting to smell a bit inside from all the diner food he and his staff are obliged to eat in order to please his followers.
The fact that Karl Rove has been aboard the bus numerous times hasn't helped matters.
"Going from gourmet to greasy spoon is not agreeing with Willard," said Pamela Fardi, Romney's appointment secretary. "And, well, a rather unpleasant smell seems to have permeated the upholstery in the bus. Quite frankly, the febreze just isn't working anymore," she added.
But new tour buses don't come cheap, so Romney had to come up with something better than smelly seat cushions to get the Koch Brothers to spring for a new million dollar luxury coach with all the bells and whistles.
"No hay problema," said Romney in his best Mexican accent. "I just told them I need a bus that is equipped with gaydar. They hate the gays, you know. So naturally, I convinced them we need the latest technology, you know, that will help us steer clear of the homosexuals lying in wait to sabotage our campaign."
Reporters caught up to Romney where he was shopping for his new ride, and caught the tail end of the conversation he was having with one of the interior designers, Rodriguo.
"Uh huh, uh huh," said Romney. "So, Rodriguo, does this gaydar work kind of like those fish finders we have on the yacht?"
"Oh, yes, Mr. Romney," replied Rodriguo while marveling at the candidate's fit physique. "That's exactly how gaydar works. Now, do you want the gaydar installed with or without the electrosphynctometer?"
Latest posts by P. Beckert (see all)
- Trump Orders All Cabinet Members to Wear Shock Collars - February 27, 2017
- 'Inauguration Roast' to Replace Standard Swearing-In Ceremony - January 18, 2017
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subset: commoncrawl


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WHOIS Server version 2.0 Domain Name: YOURNEWEARNINGS.COM Registry Domain ID: 1738401120_DOMAIN_COM-VRSN Registrar WHOIS Server: whois.annulet.com Registrar URL: http://www.annulet.com Updated Date: 2017-01-04T21:04:59.00Z Creation Date: 2012-08-11T17:04:10.00Z Registrar Registration Expiration Date: 2017-08-11T17:04:10.00Z Registrar: Annulet, Inc Registrar IANA ID: 607 Registrar Abuse Contact Email: email@example.com Registrar Abuse Contact Phone: +1.7813736840 Domain Status: clientTransferProhibited http://www.icann.org/epp#clientTransferProhibited Registry Registrant ID: Registrant Name: This Domain For Sale Worldwide 3392225132 Registrant Organization: BuyDomains.com Registrant Street: 738 Main Street, #389 Registrant City: Waltham Registrant State/Province: MA Registrant Postal Code: 02451 Registrant Country: US Registrant Phone: +1.3392225132 Registrant Phone Ext: Registrant Fax: +1.7818392801 Registrant Fax Ext: Registrant Email: firstname.lastname@example.com Registry Admin ID: Admin Name: This Domain For Sale Worldwide 3392225132 Admin Organization: BuyDomains.com Admin Street: 738 Main Street, #389 Admin City: Waltham Admin State/Province: MA Admin Postal Code: 02451 Admin Country: US Admin Phone: +1.3392225132 Admin Phone Ext: Admin Fax: +1.7818392801 Admin Fax Ext: Admin Email: firstname.lastname@example.com Registry Tech ID: Tech Name: This Domain For Sale Worldwide 3392225132 Tech Organization: BuyDomains.com Tech Street: 738 Main Street, #389 Tech City: Waltham Tech State/Province: MA Tech Postal Code: 02451 Tech Country: US Tech Phone: +1.3392225132 Tech Phone Ext: Tech Fax: ++1.7818392801 Tech Fax Ext: Tech Email: firstname.lastname@example.com Name Server: ns.buydomains.com Name Server: this-domain-for-sale.com DNSSEC: unsigned URL of the ICANN WHOIS Data Problem Reporting System: http://wdprs.internic.net >>>Last update of WHOIS database: 2017-01-04T21:04:59.00Z<<< For more information on Whois status codes, please visit https://www.icann.org/resources/pages/epp-status-codes-2014-06-16-en. Annulet Incorporated's WHOIS database is provided "as is" with no guarantee or warranties regarding its accuracy. This information is provided for researching and reviewing information about domain name registration records. Any other use of this data for any other purpose is expressly forbidden without the prior written permission of Annulet Incorporated. By submitting an inquiry, you agree to these terms of usage and limitations of the warranty. In particular, you agree not to use this data to allow, enable, or otherwise make possible, dissemination or collection of this data, in part or in its entirety, for any purpose, such as the transmission of unsolicited advertising and solicitations of any kind, including spam. You further agree not to use this data to enable high volume, automated or robotic electronic processes designed to collect or compile this data for any purpose, including mining this data for your own personal or commercial purposes. --------------------------------------- This domain may be for sale! visit BuyDomains http://www.buydomains.com Phone: 339-222-5132 or email firstname.lastname@example.com ---------------------------------------
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Sam and I
Just something I wrote because it flowed to me, although I've never even known someone close named Sam...
Sam and I were best of friends, we knew our friendship would never end.We'd laugh and sing and dance and play, until one day he walked away.
We were fifteen years old and were never apart, but that day right there, he truly broke my heart.
I yelled at him as he strode away, but my voice wouldn't let me, I had nothing to say. I guess he no longer wanted to be friends, because his heart he couldn't lend.
Why'd he leave without saying goodbye? He broke my wings so I couldn't fly. Then one day he was at my door, I said I was sorry but he was more.
Should I take him back this boy I loved?
I had no choice so that's what I did, but I had a bad feeling that I couldn't rid. We were eating dinner again one day when for the second time in life he walked away.
This hurt so bad, I cried and cried. Just that night, a part of me died. I promised myself I wouldn't take him back, his love for me is what we lacked.
Sam and I, we used to be friends, until one day it came to an end.


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Trade in? $300-350ish?
Selling it FTF? $400
This is a discussion on Trade in Value of Ruger GP100 within the Defensive Carry Guns forums, part of the Defensive Carry Discussions category; I am thinking of trading in a Ruger GP100. It is in mint condition, blued and a 4inch barrel. I want to get a S&W ...
I am thinking of trading in a Ruger GP100. It is in mint condition, blued and a 4inch barrel. I want to get a S&W Jframe to carry rather than have a GP100 that I never use.
What would be a reasonable price to trade it for if his is ok to ask on this forum?
List price new is $634. I can find it locally new for $489
Trade in? $300-350ish?
Selling it FTF? $400
$300-350 in a trade. FTF always gets you a little more.
To crush your enemies, to see them driven before you, and to hear the lamentations of their women
I don't know if this matters but it is about 10 years old. I probably shot less than 1000 rounds through it.
I got my SP101 used for $400. Checking the age by serial number it was made in 1993 but it looks mint and acts like new.
New ones go for $449 (Bud's Gun Shop) up. I am happy with it and the price. Buttery trigger and action. The GP100 should be likewise if as stated.
Yeah, My old CCW 9 MM is nicknamed "Barkey"
New CCW LCP is "Elsie"
and my 12 Ga S x S Coach gun is "Boomer"
Wife's weapon is "Miss Pearl" (SP101 .357 w/mother of pearl inserts)
We're old so we can get away with that.
Any resources that I could look up trade in value? I could go to several gun shops and ask them but that would take some time since they are not all next to each other. Calling them would be worthless because they always seem to have one guy/gal working that either is really busy or just doesn't seem like they want to talk to you.
Indusrtrial Machine Tool Technician - Certified Refrigeration Technician - CET
NRA Life Member
"If you carry a gun, people will call you paranoid. That's ridiculous... If I have a gun, what in the hell do I have to be paranoid for?" [Clint Smith - Thunder Ranch]
If you want to get full price for it...sell it. If you just wan to get rid of it the easy way, trade it.
For God so loved the world that He gave his only begotten Son, that whoever believes in Him, should not perish, but have everlasting life.
John 3:16 (NKJV)
My advice is to keep the GP and save until you can swing a J-frame. Gun purchases can be funny, in that if you get bitten by the "I want it now!" bug, you may wind up buying prematurely. My last purchase, I was saving up, and then BAM! Gander Mountain had a sale and I saved $100. The one you want will be there when you're ready.
Then you'll have the J-frame AND the GP (which is a very nice gun). For HD, the GP is a much better choice - more powerful and more accurate. Yours is "worth" to you exactly what you paid for it. If you trade or sell it, you'll take a loss.
Don't take that loss if you don't have to. By keeping the GP, you'll be able to have more HD options and good defense is all about options.
"It may seem difficult at first, but everything is difficult at first."
Keep the gun you got, or sell it outright. If you keep it, see if your dealer has a layaway program. That's how I buy all my guns now. My dealer has a 90 day, 20% down, no interest plan, and if you've been paying on it regular, he'll waive the 90 days, and let it run longer, but I've never had to do that.
For God so loved the world that He gave his only begotten Son, that whoever believes in Him, should not perish, but have everlasting life.
John 3:16 (NKJV)


text:
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|Nov 23, 2016, 03:17 PM
Club Pro
Join Date: Oct 9, 2005
Location: THORNHILL
Posts: 940
LED lamps
hey Nuts.
I have some LED lamps from the company I used to work for that unfortunately went out of business. The lamps are 1.5 years old but are still top notch from one of the better Asian factories out there. They were private labeled. I am currently dealing with the same factory for the same type of lamps for the company started on my own 14 month ago.
I have:
15- 7 watt 550 lumen 2900k Par 20 lamps
16- 5 watt 450 lumen 2900k GU10 lamps
21- 5 watt 425 lumen 4000k Par 16 lamps
am selling for $3.00 each which is 1/3 of what they were selling for when the company was still open.
Must buy complete lots - ie all the GU10's, or all the PAR16's or all the PAR20's.
If you are interested in the whole lot- 52 lamps- $120.00 is the cost.
TIA.led lamps.JPG
golf is pure escapism ...
Last edited by going4broke; Nov 24, 2016 at 12:22 AM.
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Some of the most legendary supports in League are heading to the 2016 World Championship, and Hankil "Road" Yoon will be joining them in his rookie Split. And he's still hoping that he can make a mark. Road has learned to mesh with the more experienced player in his lane, Jinjiao, and has developed into a defensive support who always has his ADC's back. Fans who cheered at the surprise Leona pick at the Mid-Season Invitational should grow to like Road; he's best known for favouring the Radiant Dawn, as well as Thresh and Braum.
No matter what champion he picks, Road has a tough path ahead. He's still a rookie heading into the World Championship with a team that just qualified for the LPL. His name has never been more appropriate, as this is the most important path he may ever tread.


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on Jul 21, 2011 @ 07:50 pm
I been wanting to get microdermabrasion done and will be going in for a free consultation next week but would like to know any advice or your experiences if any of you has had it done before. Few questions if anyone can answer please....for how many sessions did you went for...& did you see any results in the first session or until how many of them did you started seeing results..? Did you go to a dermatologist or a spa I believe they do it there too...? I want to get it done mainly cause I have pretty tiny kinda deep acne scars that bother me on my cheeks, specially on the left cheek and want my skin to look smoother specially when wearing make up. Also have some blemishes that I will like to get rid of and anything else it can do for my skin. Was wondering, and my main concern is if anyone knows if I can get those small deep acne scars gone by getting microdermabrasion...? I know I can ask when I go in but I'm anxious and would like to know if anyone has had it done before and their experiences, results.
|Not me but... on Jul 25, 2011 @ 11:09 am
A very close friend has some slight scarring on on of her cheeks and around her mouth (hereditary), and she went in for microdermabrasion. I went with her to sort of keep her company. She had 6 sessions. I honestly told her after the first session that I can't tell the difference, but the technician said that she needs to complete the sessions before she sees a difference. So she completed the sessions, and she didn't notice a whit of difference. The marks are still as prominent as always. I don't remember the exact price but it was quite pricey. I thought it was a waste for her, but that could be because of the type of scarring she had. I google'd and found some positive feedback on the procedure so perhaps she just had a lemon experience, or maybe the type of scarring she has can't be buffed away like acne scars can.
Here are some information you can look into
and here
Good luck
Ali de Bold
|Yes on Jul 25, 2011 @ 11:17 am
I have done this several times. You really need to be careful where you go as it is a fair bit more invasive than your typical facial. Since it's your first time they need to do it on a low setting and you will have to go back a few times to get the full results, but that will take place over a period of a few months. It's not something you should do more than once every 2-3 months. If they tell you otherwise I'd be concerned.
You should also seriously consider getting an oxygen treatment at the same time if you can afford it as your skin will love this and it can help repair the damage.
I'd also caution against doing this treatment in the summer as it does leave your skin extremely vulnerable to the sun and heat since you are blasting away layers of protective skin cells. What can end up happening is more sunburns, sunspots and breakouts from the pollutants that thrive in muggy weather. You should consider waiting until the fall to do this and really doing your research before you choose where to get it done. I'm not sure where you are located but in Toronto I recommend Pure & Simple.
Let us know how it goes!
|I have done this on Aug 13, 2014 @ 03:07 pm
I am kind of late to answer these questions for you, but for who ever is wondering, here's my version.
I have done this a few times from a beautician , and i truly love this. To be honest with you, this is not to repair a damage skin, but to clean deep your skin . The only difference you will see after a session is that your skin will look smooth and clean even better than a traditional facial. Your pores will be totally deep clean and your skin will feel so soft. If you have a sensitive skin like i have, your skin will only be a bit red at the end, which is normal, because they are using a small vacuum in your face. This must be done once every 3 months. I would suggest that you do that every seasons.
As for scarring, and dark spot or acne on your skin, i would suggest another treatment, which is called IPL (Intense Pulsed Light). I am not a beautician, so of course you will have to ask more info about this treatment to your beautician. I am doing this treatment right now for my brown spots (sun damage), and just after doing 5 sessions, i barely see them. The sessions cost between 60$ and 80$ Canadian money. I could actually stop now, but i want to make sure that i don't see not even a what so call spot ;) . Hope my comment help!


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It is a fact: There is never any money for travel. We all have those bills that just keep coming. In fact, there are some months it seems like they are coming even faster than the month before. But everyone – every person, every family, every parent – wants to go on vacation, They want – actually, they need – to get away from it all for a while and have a little fun in order to cut down on the anxiety and celebrate life for a time. So…what to do? Well…there are places in the U.S. that were strictly put in the U.S. for the budget conscious traveler. They are not only stunning places to visit, but they are also free. Why, you ask? Because we are talking about the conglomeration of U.S. National Parks that are out there and all the unique, FREE activities and events they have to offer.
Hidden Adventures for the Budget Conscious
Scrapbooking for Beginners!
When it comes to the arts & crafts/hobby world, there is one that has climbed the charts of popularity over the past few years. Scrapbooking calls out to a variety of people who, let's face it, are truly sick and tired of cellphones clicking away, yet never producing PAPER copies of your grandchild's photos. I realize that these electronic photos are simpler to use as backgrounds on laptops and backgrounds on the cellphones themselves, but they take away from the grandmother who wants to carry those PAPER copies in her purse to show off to others. But…I digress.
Travel: Leaving the Commonplace Behind
What is the definition of a vacation? Well, there are those living in the snow who believe their vacation should come along with the warmest beach and a few fancy drinks with little umbrellas in them so they can relax before heading back to the deep-freeze. There are also those who sit at desks all day and dream of a vacation that allows them to hike those trails in the Great Outdoors. There are even more who have the kids literally screaming in their ear who simply want a vacation from their vacation.
Making Money Online
Yes…there are books, audiotapes, videos on YouTube, seminars, webinars and every other 'nar' you can possibly think of that offer up information on how YOU can be a millionaire using nothing but your own home computer. Of course, if wealth were that easy, no one would be clogging the highways on Monday morning. They would be home in their robe enjoying the day and counting their oodles and oodles of cash. Not to mention, you would think if wealth online was a plan that worked there would be far more doing just that, considering literally everyone is spending at least three hours on their computers each and every day for personal time and are staring at their cell phone screens 24/7.
Finding a Hobby that Fits Your Personality
Although there are many out there who turn to their computers or cell phones as their hobby, there are just as many others who want to be more creative. They want to learn something new and fun to do in their spare time. They're not looking for cash, they're looking for a way to relax and 'get away' from the daily grind. Of course, when it comes to choosing the right hobby, personality is everything.
There are millions of spots to visit and sites to see around the world when it comes to vacation time; however, there are also those you can't necessarily "see." In this world of digital technology and highly imaginative architecture that creates buildings that are higher and more "glitzy" than ever before, it is important to remember that in ancient times, people were building "down." Various civilizations created locations underground, while others actually got buried by Mother Nature and simply forgotten about. Let's begin internationally…
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After 25 years in the Eagle Village Shops location, Salon d'Artiste will be moving to the heart of Wayne near South Moon Under. Check with us for the grand reopening.
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|Publication number
|Publication type
|Application number
|Publication date
|Nov 11, 2008
|Filing date
|Jul 11, 2005
|Priority date
|Mar 5, 2004
|Fee status
|Also published as
|Publication number
|Takeshi Akatsu, Nicolas Daval, Nguyet-Phuong Nguyen, Olivier Rayssac, Konstantin Bourdelle
|Original Assignee
|S.O.I.Tec Silicon On Insulator Technologies
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (56), Non-Patent Citations (7), Referenced by (17), Classifications (8), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a continuation of International Application no. PCT/FR2005/000542 filed Mar. 7, 2005, and a continuation-in-part of application Ser. No. 11/059,122 filed Feb. 16, 2005, now U.S. Pat No. 7,276,428 the entire content of each of which is expressly incorporated herein by reference thereto.
The invention generally relates to methods for forming a semiconductor structure that includes transferring a layer from a donor wafer. An embodiment of the method includes implanting atomic species to form a zone of weakness in the donor wafer at a given depth, bonding the donor wafer to a host wafer, supplying energy to detach a transfer layer from the donor wafer at the weakness zone and treating the transferred layer.
A type of layer transfer process called SMART-CUT� is known to those skilled in the art. Details of the technique may be found in many published documents, and an example is the extract on pages 50 and 51 of "Silicon on Insulator Technology: Material to VLSI, second edition," by Jean-Pierre Colinge published by "Kluwer Academic Publishers".
Simple implantation (for example, using hydrogen) at a suitable implantation energy can be used to conduct the implanting step. Alternately, a co-implantation process (for example, using hydrogen and helium) with dosing of the implanting chemical types at a suitable implantation energy could be used. The bonding step typically takes place on the surface of the donor wafer that underwent implantation, which is bonded to a bonding layer made of dielectric material such as SiO2. Bonding techniques typically used by those skilled in the art include initial bonding by molecular adhesion. The document "Semiconductor Wafer Bonding Science and Technology" (Q Y Tong and U. G�sele, Wiley Interscience Publication, Johnson Wiley and Sons, Inc.) can be used to obtain more information.
During the detachment step, energy is at least partially provided, typically in the form of heat. Therefore, the thermal budget (the combination of the temperature and the duration of the heat treatment) needs to be considered to determine the moment when the layer to be transferred will be detached. Thus, a semiconductor on insulator structure may be formed. For example, an SOI structure (when the detached layer is made of silicon), an SiGeOI structure (when the detached layer is made of germanium silicon), a sSOI structure (when the transferred layer is made of strained silicon), or a GeOI structure (when the detached layer is made of germanium).
After detachment, it has been frequently observed that the transfer layer may have quite a rough surface, as well a lower quality crystalline structure on its surface. This is due especially to the prior implantation and detachment steps. Referring to
For example, a method is described in the published U.S. patent application Ser. No. 2004/0053477 in which a strained silicon layer is detached from a donor substrate including a SiGe buffer layer. The implanting step consists of making the implantation in the buffer layer, and the treatment step consists of removing the detached part from the buffer layer by means of surface polishing the SiGe, and then selective etching the SiGe with respect to the strained Si. Selectively etching permits the desired layer to be obtained that has a good quality surface finish, and without too high a risk of damaging it (which could be the case if only polishing were used). However, the use of chemical etching to treat the transfer layer may in certain cases lead to at least partial detachment problems of the bonding interface. In particular, a chemical etching treatment may cause de-lamination at the edge of the bonding layer, by attacking the edge where it touches a slice of the created structure. For example, a HF treatment could be used on an sSOI (strained Silicon on Insulator) structure comprising SiO2, buried under the strained Si, or a H2O2:HF:HAc treatment could be used (where HAc is the abbreviation of acetic acid) on an sSi/SiGeOI structure (strained silicon on SiGe On Insulator), where the buried SiGe and SiO2 layers are likely to be etched under the strained Si layer.
As an alternative process to overcome the aforementioned problem, the etching solution could be diluted considerably so that its action is easier to control. However, this does not provide a satisfactory solution to the problem because it does not totally resolve the de-lamination problem, and a diluted solution works more slowly. Moreover, chemical etching requires prior preparation of the surface to be etched, which typically means using mechanical polishing means. In fact, etching preparation is necessary to correct part of the major roughness which could subsequently lead to etching that is not sufficiently homogeneous and likely to create traversing defects or holes in the remaining layer. The successive use of polishing and chemical etching make the post-detachment finishing step (as well as the entire sampling method) long, complex and costly.
It also has been proposed to perform the implanting step by implanting several atomic species, typically by performing an implantation of helium and an implantation of hydrogen.
This type of implantation is hereafter designated by the term co-implantation. Performing co-implantaion indeed allows for the total dose of co-implanted species that is used to be lower than that required for implanting a single species. The total dose of co-implantation species thus typically represents only about ⅓ of the dose of single species implantation.
As a result of this decrease in total implanted dose, a decrease of the defective zone thickness is found and this in particular allows to reduce or to simplify the finishing treatments performed after detachment. Copending PCT application PCT/IB2004/003300 filed Sep. 21, 2004, which teaching also has been made available to the public online on the IP.com site on Mar. 1, 2005 under reference IPCOM000083333D, discloses, with relation to co-implantation within a Si layer, that the co-implantation parameters that help minimize roughness lead to the formation of certain defects (such as blisters at the bonding interface, or crystalline defects within the thickness of the taken-off layer), and reciprocally the co-implantation parameters that help minimizing such defects generally lead to increased roughness. In other words, a compromise has to be made between roughness and formation of these defects, and the recourse to co-implantation thus does not allow the skilled artisan to satisfactorily solve the above mentioned problems relating to the presence of defects and superficial roughness of the detached surface. Thus, improvements in these type processes are desired and needed.
This invention overcomes the problems of the prior art by providing simplified methods for forming semiconductor structures. One embodiment of this invention comprises: providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface; coimplanting two different atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer; bonding the free surface of the second layer to a host wafer; and supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer. Advantageously, the donor wafer comprises a SiGe layer, and the co-implantation of atomic species is conducted according to implantation parameters adapted to enable a first species to form the zone of weakness in the SiGe layer, and to enable a second species to provide a concentration peak located beneath the zone of weakness in the donor wafer to thus minimize surface roughness resulting from detachment at the zone of weakness.
Preferably, the first species is hydrogen and the second species is helium with the helium provided at a dose accounting for approximately 30% to 70% and preferably 40% to 60% of the total dose of hydrogen and helium. More particularly, in a highly preferred embodiment, hydrogen is provided at a dose of about 1�1016/cm2, and helium is provided at a dose of about 0.9�1016/cm2. Thus, the implantation parameters can be selected to provide a surface roughness of the second layer immediately after detachment that is less than about 40 Å RMS measured on a 10�10 μm portion of the surface.
If desired, the method further comprises conducting a bond strengthening step on the structure after detachment at a temperature of less than about 800� C. to improve the strength of the bond between the second layer and the host wafer. Preferably, the bond strengthening step is carried out at a temperature comprised between 575� C. and 625� C. to provide a bonding energy that is greater than or equal to about 0.8 J/m2.
The method may also beneficially include selectively etching the first layer portion to remove it from the structure and to expose a surface of the second layer. After selectively etching, growing a layer of the second material on the second layer to increase its thickness. In a preferred embodiment, the first layer is made of Si1−xGex where 0<�≦1, and the second layer is made of elastically strained Si that is provided at a thickness that is greater than a critical equilibrium thickness. In addition, the donor wafer comprises a support substrate made of solid Si, a buffer structure made of SiGe, a first layer comprising Si1−xGex (x≠0), and a second layer made of strained Si, or the first layer is made of elastically strained SiGe, and the second layer is made of Si1−xGex where 0<�≦1. In a beneficial embodiment, the first layer is made of elastically strained SiGe, and the second layer is made of Si1−xGex where 0<�≦1 and the donor wafer comprises a third layer made of Si1-xGex located under the first layer. In addition, implanting may occur under the first layer, and may further include selectively etching a portion of the third layer to the level of the first layer after the detachment step. In an implementation, the donor wafer includes a support substrate made of solid Si, a buffer structure made of SiGe, and a multi-layer structure alternately comprising first layers made of si1−xGex (x≠0) and second layers made of strained Si. Such a structure permits several layer transfers from the same donor wafer, wherein each strained Si layer is provided at a thickness that is greater than a critical equilibrium thickness. In addition, prior to implanting, the method may include forming the strained layer at a deposit temperature of between about 450� C. and about 650� C. The treatments used between the deposit and the detachment steps are conducted at temperatures less than or equal to the deposit temperature.
In yet another beneficial embodiment, the method according to the invention includes, prior to bonding, forming a bonding layer comprising an electrically insulating material on the second layer, the host wafer, or both. In this case, the electrically insulating material may be at least one of SiO2, Si3N4 or SixOyNz.
Use of the methods according to the invention reduces the duration, the economic cost and the number of treatments utilized on a transferred layer, and removes the need for mechanical polishing. Use of a method according to the invention also prevents delamination of the edge of the bonding layer when a chemical etching finishing process is used. In addition, the present method permits the creation of a structure, such as a semiconductor on insulator structure, that includes a transfer layer of a material weaker than Si, such as strained Si or SiGe. The resulting structure also has a layer of better quality than those of other methods, and the inventive process reduces the quantity of wasted material used when treating the transfer layer. Moreover, the present invention provides a simplified method of treating the transfer layer that can be easily incorporated into a SMART-CUT� process.
Other aspects, purposes and advantages of the invention will become clear after reading the following detailed description with reference to the attached drawings, in which:
Presented are example embodiments of methods according to the invention, as well as applications based on the transfer of layers using the SMART-CUT� method with Type IV materials or alloys, and in particular with Si and SiGe.
The invention provides a number of improvements and advantages over prior art processes. The present methods reduce the duration, the economic cost and the number of treatments for the taken-off layer, and in particular to avoid using mechanical polishing. It also seeks to avoid delamination of the edge of the bonding layer when the finishing chemical etching takes place. Thus, the method can be used to create a structure, such as a semiconductor on insulator structure, comprising a taken-off layer including more weak material than Si, such as strained Si or SiGe, from a sampled layer of better quality material. Another benefit is that the quantity of material wasted when treating the taken-off layer is reduced. Thus, the invention proposes a simple method of treating the taken-off layer that can easily be incorporated into the entire sampling of SMART-CUT� type methods.
In one embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer, and bonding the free surface of the second layer to a host wafer. The method also includes supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer, conducting a bond strengthening step on the structure after detachment at a temperature of less than about 800� C. to improve the strength of the bond between the second layer and the host wafer, and selectively etching the first layer portion to remove it from the structure and to expose a surface of the second layer. The implanting step includes implantation parameters chosen to minimize surface roughness resulting from detachment at the zone of weakness.
Advantageously, the bond strengthening step is conducted to provide a bonding energy that is greater than or equal to about 0.8 J/m2. In addition, the implantation parameters are selected to provide a surface roughness of the second layer immediately after detachment that is less than about 40 Å RMS measured on a 10�10 μm portion of the surface.
In a beneficial embodiment, the bond strengthening step comprises conducting plasma activation on the free surface of the second layer, the host wafer or both prior to bonding. In a variation, the bond strengthening step comprises conducting a heat treatment on the detached structure. The bond strengthening heat treatment may be carried out at a temperature of above about 550� C. but less than 800� C. for between about 30 minutes and about 4 hours. In a beneficial implementation, the supplying of energy may include heating the structure in a furnace to a temperature that causes detachment, and the bond strengthening heat treatment is then conducted after detachment occurs and without removing the structure from the furnace. In such a case, the bond strengthening heat treatment may include a single temperature change from the detachment temperature to a second temperature that is selected for the bond strengthening heat treatment. The energy supplied to detach the structure from the donor wafer may include heating the structure at a temperature of about 500� C. for a time of about 30 minutes to about 2 hours. In another advantageous implementation, the method includes conducting a heat treatment after the bond strengthening step to further strengthen the bond. In this case, the further bond strengthening heat treatment may be conducted at a temperature of above about 350� C. but less than 800� C. for between about 30 minutes and about 4 hours.
The silicon of the second layer 2 is then biased by the first layer 1 to increase its nominal mesh parameter to make it more or less identical to that of its growth substrate, and thus to present internal elastic strain tensions. It is necessary to form a second layer 2 that is quite thin because if the layer is too thick, thicker than a critical equilibrium thickness, then a relaxation of the strain would result in the film thickness towards the nominal lattice parameter of the silicon and/or faults would be generated. Details on this subject can be found in "High mobility Si and Ge Structures" by Friedrich Schaffler ("Semiconductor Science Technology", 12 (1997) 1515-1549). However, in the particular case of a deposit of strained material at a sufficiently low temperature, it may become possible to form such a second strained layer 2 with a thickness greater than the critical balance thickness (discussed below).
Before bonding the host wafer 20 to the donor wafer 10, the bonding surfaces may be prepared by using known surface cleaning and polishing techniques, such as SC1 and SC2 solutions, ozone solutions, and the like. The bonding itself may be conducted by molecular adhesion, by being able to take account of the hydrophobic properties of each of the two bonding surfaces. It is also possible to use plasma activation of one or both of the bonding surfaces just prior to bonding. Plasma activation permits in particular the creation of handling bonds, for example on an oxide surface, or on the surface(s) to be treated. The bonding forces are thus increased and the number of defects reduced at the bonding interface 6. Such strengthening of the bonding interface 6 has the advantage of making the interface much more resistant to chemical attacks from etching (which is used when finishing the surface of the transferred layer), and avoids delamination problems that could occur at the edges as mentioned previously, which may typically appear for a bonding energy below approximately 0.8 J/m2. In particular, plasma activation is used so that in the end, after bonding and after transferring layers, the bonding energy is greater than or equal to approximately 0.8 J/m2. The plasma may be obtained for example from an inert gas, such as Ar or N2, or from an oxidizing gas such as O2.
Plasma activation is typically carried out at ambient temperature, below approximately 100� C. The use of this technique therefore also has the advantage of not causing any notable problems of diffusing Ge from the first SiGe layer 1 into the second strained Si layer (the diffusion of Ge starts to become significant in the thickness of neighboring layers when much higher temperatures are used, typically around 800� C. or more). The plasma treatment is very quick, typically taking less than one minute. Standard plasma etching equipment could be used, for example, of the RIE or ICP-RIE types or other devices.
After treating prior to bonding, an annealing heat treatment of less than 800� C., or less than a limit temperature where diffusion of Ge in the neighboring layers would become damaging, may be used later during bonding. The annealing heat treatment further strengthens the bonding and also aids in avoiding any delamination problem that may occur when conducting a post-detachment selective etching process. In contrast, heat treatments without prior plasma activation demand, for an equivalent result, temperatures greater than approximately 900� C. to be efficient, and such high temperature heat treatments cannot be used in this case due to the problems of Ge diffusion. Consequently, a bonding energy of at least 1 J/m2 after an annealing heat treatment at 200� C. can be achieved, in the case of bonding preceded by plasma activation.
In the case of heat treatment being used in addition to plasma activation, it is possible to ensure that the combined effects of the two treatments achieve the desired objectives. In particular, the result is a bonding energy sufficient to make the bonding interface 6 resistant to chemical attack from later etching, and thus avoids delamination problems on the edges as previously described. The two treatments can thus be combined to strengthen the bonding interface 6 to obtain a bonding energy greater than or equal to approximately 0.8 J/m2. In any case, the heat treatment for strengthening the bonding interface 6 is carried out at a temperature T2 that is chosen to be below the temperature above which the Ge diffuses significantly into the thickness of the second layer 2. This heat treatment is chosen to strengthen the bonding sufficiently to prevent any risk of delamination at the edges during the selective etching that will be used after the transfer of layers. In particular, the heat treatment may be used to obtain as a result a bonding energy higher than or equal to approximately 0.8 J/m2. The heat treatment to strengthen the bonding interface 6 is carried out at a temperature T2 lower than or equal to approximately 800� C.
When the remaining part 10′ of the donor wafer and the structure 30 are still in contact after detachment, the heat treatment to strengthen the bonding interface 6 is conducted at a temperature that is lower than the re-adhesion temperature from which the two parts 1′ and 1″ of the first layer would re-adhere (or rejoin). The re-adhesion temperature being considered here, and based on experience working with SiGe, is over approximately 800� C. Optionally, the temperature T2 may be greater than the temperature T1 that the wafers 10 and 20 were subjected to when detached. This heat treatment to strengthen the bonding is carried out in an inert atmosphere (such as an Ar or N2 atmosphere) that is oxidizing or slightly oxidizing. The temperature T2 may for example be situated between about 350� C. and about 800� C., and maintained for between about 30 minutes and about 4 hours. More particularly, the temperature T2 may be situated between about 550� C. and about 800� C., and maintained for between about 30 minutes and about 4 hours.
As shown in
The mechanical polishing means used prior to chemical etching to reduce the surface roughness (and therefore to make the different points of the etching more homogeneous), does not necessarily need to be included. In fact, the co-implantation process ensures a much smoother sampling surface than that obtained by simple implantation. Furthermore, the bonding strengthening heat treatment allows this roughness to be substantially diminished, as described above, and to increase the bonding energy.
The si1−xGex layer 1′ may possibly be removed in order to obtain a final sSOI structure. It is then possible to make the strained silicon of this structure thicker by epitaxy. To remove the layer 1′ of si1−xGex selectively, it is possible to use selective etching by using for example HF:H2O2:CH3COOH, SC1 (NH4OH/H2O2/H2O) or HNA (HF/HNO3/H2O). A selectivity of around 40:1 between the SiGe and the sSi may be obtained with CH3COOH/H2O2/HF. The concentration that may be chosen for the CH3COOH/H2O2/HF can range from a ratio of H2O2/HF that is between 1/1 (very concentrated) and 20/1. The length of the etching is directly correlated with the speed of etching. It is typically around 5 minutes for 800 Å to be etched with CH3COOH/H2O2/HF.
Thus, co-implantation and the possible use of a bonding strengthening heat treatment considerably reduce the surface roughness and the non-uniformities of thickness in the transferred layers 1′ and 2. Thus, it is possible to use more or less the same selective etching process as those of the state of the art, but the disadvantages that they can present have been eliminated, such as the need to use a prior mechanical polishing means. Moreover the bonding strengthening (conducted by plasma activation and/or by using a post-separation heat treatment) is sufficient to eliminate the problems of delamination at the edges, which was mentioned earlier.
The results of surface roughness measurements made on such a SiGeOI structure having 20% Ge are presented in the table below. These measurements were made just after detachment at about 500� C. for about 30 minutes following simple implantations or co-implantations, and at a bonding strengthening heat treatment (post separation) at about 500� C. or about 600� C. The roughness was measured and the values are given in RMS or peak to valley (PV) by AFM on surface areas of 10�10 μm. It should also be noted that a sufficient number of measurements were made to validate the results.
Surface roughness
Nature of the implantation
Simple implantation
500� C./30 min.
H: 40 keV-6.1016/cm2
600� C./30 min.
Co- implantation of H and He:
500� C./30 min.
H: 35 keV-1.0.1016/cm2
600� C./30 min.
He: 70 keV-0.9.1016/cm2
In the above table, it is noted that the surface roughness is less significant when a co-implantation process is used than when a simple implantation is used. Thus, the influence of the nature of the implantation made in SiGe to form a zone of weakness 4 is highlighted. Concerning the extent of the post-detachment roughness which appears, a helium-hydrogen co-implantation permits the roughness of the SiGe layer 1 to be substantially reduced with respect to a simple hydrogen implantation.
In the table, it can also be noted that, in the case of a co-implantation, a post-detachment bonding strengthening heat treatment at 600� C. reduces by almost a third both the mean (RMS) and maximum (PV) roughness with respect to the same heat treatment conducted at the detachment temperature (approximately 500� C.). The roughness is less than 40 Å RMS or may be even less than 35 Å RMS, and below 300 Å PV or may be even below 275 Å PV. It has thus been established that there is significantly less roughness when the transferred layer 1 has undergone a post-detachment bonding strengthening heat treatment. Referring to
When one or more bonding layers is buried under the bonding interface 6, a heat treatment may possibly be used to further strengthen the bonding, in particular by creating covalent links. This bonding strengthening heat treatment may be carried out at a temperature of over 800� C., given that there is no more SiGe or Ge in the structure 30, and consequently there are no more diffusion considerations for Ge (because the remainder of the first layer 1′ has been completely removed). A subsequent crystalline growth step may be used (for example MBE or CVD epitaxy) to thicken the second layer of strained Si.
Other roughness measurements on a sSI structure (for which a strained Si layer has been deposited on a SiGe layer comprising 20% of Ge) are presented hereafter. These results more particularly concern certain detachment parameters, and notably several co-implantation parameters. The Background explains the different problems encountered when forming a structure comprising a Si layer taken off from a donor wafer by a SMART-CUT� type process. These problems (and a solution to cure them) are discussed in International application PCT/IB2004/003300 and its U.S. equivalent filed of even date hereof. The use of co-implantation can indeed lead to the formation of blisters at the bonding interface and of defects within the thickness of the taken off layer. Particles or organic substances present on one and/or the other of the wafers to be bonded can prevent the bonding to be carried out in a successful manner at certain regions of the bonding interface. The implanted species may then diffuse to the weakly bonded bonding interface regions, forming blisters at the level of the bonding interface. Furthermore, in certain locations, the bonding energy may be insufficient to allow detachment of the donor wafer layer. Certain zones of the taken off layer may then not be transferred onto the host wafer (these zones are communally designated under the term of "non transferred zones" or NTZ). In addition, nanocavity crystalline defects (presenting a diameter of a few nanometers) may be observed within the thickness of the taken off layer beyond the defective zone, depending upon the chosen co-implantation conditions. These defects can result from an agglomeration of Si or Ge atoms that are displaced during implantation. In particular, when helium is implanted at the same depth as hydrogen, these nano-cavities type defects are observed within the thickness of the taken off layer. While these defects are located beyond the defective zone, they are as undesirable as defects present in the defective zone. The appearance of these defects necessitates the removal after detachment of a greater thickness of material than usually necessary, and thus necessitates the taking off of a thicker layer to provide sufficient material to compensate for the amount that has to be removed.
In reference to the views of
Each of the implanted species is distributed within the thickness of the donor wafer according to a repartition profile having a spreading zone within which the species is mainly concentrated and presenting a maximum concentration peak. More precisely, the repartition has a quasi-Gaussian profile presenting a standard deviation (defining the spreading zone wherein the species is mainly distributed, for instance within which one finds 70% of the implanted species) and a maximum concentration peak which notably depends upon the implantation energy. The helium atoms diffuse within the Si matrix more easily than the hydrogen atoms. Hence if helium is implanted close to the bonding interface, these is an increased risk that blisters or crystalline defects beyond the defective zone will form. One way to cure this problem is to implant helium more deeply than hydrogen, so that the hydrogen containing region is present to block the diffusion of helium. It is more precisely a question of controlling the co-implantation parameters so that the helium peak is located more deeply than the hydrogen spreading zone.
However, it also has been shown that the roughness after detachment does not follow the same tendency, and tends to increase when helium is implanted more deeply than hydrogen. This signifies that the implantation conditions (i.e. implantation doses and energies) do not allow the independent controlling of the roughness and the formation of blisters and crystalline defects beyond the defective zone. It is thus necessary to make a compromise between the best parameters for limitation of the formation of blisters and defects and the best parameters for limitation of the surface roughness.
A solution making it possible to overcome this problem has already proposed in the previously mentioned International application, PCT/IB2004/003300. Generally speaking, this solution includes precisely controlling the relative position of the hydrogen and helium peaks in the implanted donor wafer, with the helium peak being located at the level of the embrittlement or weakness zone and more deeply than the hydrogen spreading zone, and in jointly controlling the dose of each species, with the helium dose accounting for approximately 40% to 60% of the total amount. By carrying out the step of implantation by co-implanting according to these parameters, a satisfactory compromise can be found between roughness and formation of defects. Experiments carried out on the detachment at the level of layers containing Ge (typically layers of SiGe comprising more than 15% Ge) led to surprising results with regard to the roughness and the formation of blisters and crystalline defects beyond the defective zone.
A possible embodiment of the process according to the present invention is as follows:
The implantation parameters are adapted to "place" the helium peak at a depth approximately 1.2 times deeper than the depth of the hydrogen peak. As an example, for the conditions of implantation dose and energy presented herein, this means placing the helium peak at more than 500 angstr�ms from and beneath the hydrogen peak. The helium dose lies between 30% and 70% of the total dose (hydrogen+helium), preferably ranging between 40% and 60% of the total dose. The total dose typically represents some 1016 atoms/cm2, without that number being restrictive.
Such an embodiment makes it possible to strongly reduce roughnesses (in particular those of high frequencies), and makes in addition low roughnesses independent from the helium implantation depth. It is thus possible, within the framework of this embodiment, to implant helium more deeply than hydrogen, which makes it possible to limit the formation of blisters and crystalline defects beyond the defective zone in the taken-off layer, the diffusion of helium in the transferred layer being blocked by the hydrogen spreading zone.
Consequently, this embodiment makes it possible to minimize at the same time the roughness post detachment, the number of defects of the blisters type and the number of defects found in the thickness of the taken-off layer. This results in authorizing the taking-off of a lower total thickness, which makes it possible to reduce, or all at least to simplify, the post-detachment finishing operations (polishing, selective etching, sacrificial oxidation, etc). The skilled artisan can determine the optimum dosages for any particular substrates based on the teachings herein and by conducting, if necessary, routine experimentation.
H: 30 kev−1�1016/cm2 and He: 52 or 60 keV−1�1016/cm2
As concerns SiGe, five wafers were studied, namely a wafer subjected to an implantation of H only (H: 30 keV, 6�1016/cm2), and four others subjected to a He/H co-implantation according to the following parameters:
H: 30 keV−1�1016/cm2 and He: 48, 52, 56 or 60 keV−1�1016/cm2
In addition, one can see that for a 500� C. treatment (and in a way similar to what was observed in Si), roughness tends to increase when the helium peak is located more in-depth than the embrittlement zone. On the other hand, within the framework of a high temperature treatment at 600� C., roughness is not significantly modified when one implants helium such that the helium peak is located more deeply than the embrittlement zone. One observes here an unexpected behavior, in opposition against what was observed in Si, as well as in SiGe with a 500� C. treatment. The results presented in
The behavior in co-implantation, during a recovering treatment at 600� C., is surprising insofar as the phenomenon noted within the framework of a detachment on the level of a layer of Si were that of an increase in roughness when the helium implantation energy was increased (helium peak shifted more in-depth than the embrittlement zone. The phenomenon of post-detachment surfaces smoothing is thus related not only to the temperature of the recovering treatment, but also to the types of materials present in the donor wafer. In the experiments carried out, the difference lies in the presence of Ge in a wafer in SiGe, a Si wafer being obviously deprived of Ge.
With reference to
A second selective chemical etching of the strained Si may optionally be conducted, for example by means of chemical types based on KOH (potassium hydroxide), NH4OH (ammonium hydroxide), TMAH (tetramethyl ammonium hydroxide) or EDP (ethylene diamine/pyrocathecol/pyrazine). In this case, the first layer 1 made of strained Si plays the role of a stop layer that protects the second si1−xGex layer 2 from the first chemical attack. A SiGeOI structure 30 (not shown) is then obtained. A layer of strained Si can also be grown on the SiGeOI, and this new strained layer may have a better quality crystalline structure than the first layer 1 which has previously been etched.
According to another embodiment, each strained layer (referenced "2" in
Thus, in the case of thick strained layers, a plasma activation operation will advantageously be used prior to bonding (as discussed earlier), and will typically be conducted at an ambient temperature that is lower than approximately 100� C. Furthermore, at least one bonding layer of dielectric material, such as SiO2, is advantageously formed on one or both of the two surfaces that are to be bonded, and this layer is made of dielectric material that subsequently helps (after separation) to conserve the elastic strains. If no bonding layer is planned, then as a complement to the plasma activation operation a post-detachment heat treatment at a temperature T2 may be used, wherein T2 is advantageously lower than the deposit temperature of the thick strained layer.
Of course, those skilled in the art can easily modify the method presented above so that materials other than si1−xGex or strained Si can be utilized, given that the skilled person knows the properties and physical characteristics of such materials. For example, by retracing the steps previously described with reference to
Similarly, a GaN-on-insulator structure can be manufactured from a donor wafer 10 comprising a first layer 1 made of SiC or Si (111) and a second layer 2 made of GaN. One or several stop layers made of AlGaN and/or AlN may possibly be provided in the GaN layer. After detachment of the second layer 2 made of GaN, a selective etching process including the removal of the GaN located above the stop layer can be used. For example, a dry etching process using a plasma gas of CH2, H2 and possibly Ar, can etch the GaN quicker than AlN. The stop layer could be removed to obtain finally a layer of GaN with little surface roughness and a very homogeneous thickness. In the same manner, the method can be adapted to apply to other transfer layers made of Type III-V or Type II-VI alloys. Furthermore, all of these materials could be extended to those including carbon in small quantities (around 5%) or doping agents.
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