text:
ED Magedson – Founder
Ripoff Report
SYN Inc.PO box 159 Idledale, Colorado United States of America
Does your business have a bad reputation?
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Corporate Advocacy Program™
I had a young lady come to my door named shay. She said she was selling magazines for a project that was guys versus girls. So i decided to look at what she was selling.
She seemed very pushy about wanting to sell magazines to me. So i thought that the only way i could get her to leave was to buy a subsription. So i paid her $79 cash.
After she left i decide to look the company up on the internet and to my surprise it was a scam. So i called the police and tried to make a report and they told me there was nothing they could do until i didnt get my magazines.
This report was posted on Ripoff Report on 09/17/2010 05:33 PM and is a permanent record located here: http://www.ripoffreport.com/reports/syn-inc/idledale-colorado-80453/syn-inc-shay-scammed-me-on-a-magazine-sale-idledale-colorado-641703. The posting time indicated is Arizona local time. Arizona does not observe daylight savings so the post time may be Mountain or Pacific depending on the time of year.
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text: Buy Horchata Rice Flavour Concentrate Mix 700ml at Grocery Store for Authentic Mexican food & Chillies - Horchata is a rice based drink or Rice Milk and is a popular flavour throughout Mexico Mix it with Mezcal makes a great cocktail! Concentrated Mexican Horchata drink with rice, cinnamon and sugar. A 700ml bottle of concentrate makes about 6 times of your favorite flavor. (pronounced or-CHAT-ah). just mix 1 portion of concentrate with 5 of water and ready to enjoy it! MEXICAN HORCHATA The Horchata drink is said to be very helpful for stomach aches, hangovers and when you are sick.

subset: commoncrawl


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The wife pleasing kitchen will inspire all to cook up a storm, with contemporary finishes and style. There's space for all needed appliances, ample built in cupboards, a separate scullery and laundry area.
The magnificent master suite has an abundance of space with a massive bedroom, huge dressing area and an exquisite en-suite bathroom with dual vanities. The remaining 2 bedrooms have laminated floors, built in cupboards and are serviced by a modern bathroom with shower, toilet and basin.
A beautiful and large flat-let is perfect for the extended family as it boasts 2 bedrooms and 1 bathroom with shower, toilet and basin. A spacious lounge area and an open plan dining area with a retro styled kitchen and gas stove completes.
Extras included a private and tranquil garden, a beautifully designed pool and lapa area with a built-in-braai, automated gate, automated garage, electric fence and an irrigation system in the front yard.
|Office: 011... 0114722200 Show Numbers
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|Fax: 011675-0075


text:
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text:
Aaron Rodgers on Boyz II Men bet: 'There's nothing to that'
So it seems we won't be seeing Aaron Rodgers wear that 49ers jersey after all.
TMZ first reported this weekend that Rodgers made a bet with R&B group Boyz II Men in exchange for their performance of the national anthem at Sunday's doomed game against San Francisco.
As penance for the Packers loss, Rodgers was supposed to wear 49ers QB Alex Smith's jersey for the week. Then Boyz member and 49ers fan Nathan Morris, who laid down the dare for Rodgers, told TMZ that Rodgers would wear the jersey in due time, but he had to focus on Thursday's game with the Bears first.
Now Rodgers has said that the bet "got blown way out of proportion."
"It was at best a joke between friends, and unfortunately, the great reporting of TMZ blew another one," Rodgers told a TV reporter. (See for yourself in the video below.)
TMZ's response: "What did we blow? You made a bet...you lost...now you're not living up to it."
What do you think? Is Rodgers weasling out of a bet, or did TMZ blow this whole thing out of proportion?
- Top of the Charts: Sia takes over No. 1 spot
- Top of the Charts: Drake makes nine weeks at number one
- Top of the Charts: Drake reaches eight weeks on top
- Sunday Summerfest country pick - Jana Kramer
- Saturday Summerfest country pick - Cam
- Friday Summerfest country pick - Phil Vassar
- Thursday Summerfest country pick - Frankie Ballard
- Wednesday's Summerfest country pick: Hunter Hayes
- Tuesday Summerfest country pick - Michael Ray
- Sunday Summerfest country pick - Kane Brown
Piet Levy is the Journal Sentinel's music writer. He has also been published in USA Today, the Chicago Tribune and the Washington Post.
Erik Ernst is a freelance music writer for the Milwaukee Journal Sentinel. He blogs for Tuned In about country, folk, jam and American roots music.


text:
No one has shouted yet.
Be the first!
Be the first!
Related News
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- Blues giant changes focus for AFL clash Fri
- Carlton Blues nab AFLW star Tayla Harris Thu
- Schache's rest not contract related: Lions Wed
- Lions must show Schache the money: Brown May 22
- Carlton defender Rowe has ruptured ACL May 22
- Ruthless Crows tear Lions to shreds in AFL May 20
- Lions braced for brutal Crows AFL backlash May 19
- AFL draftee contracts 'ridiculous': Fagan May 18
- Rockliff out, Beams may return for Lions May 16
- Bolton believes Saints in AFL flag mix May 11
- Hawthorn on way back up in AFL: Fagan May 10


text:
This is the full research report for 188.8.131.52, which is an IP address.
ParsOnline Network Operations Center
224 Khoramshahr ave., No. 6C
Tehran 15337, Iran
Telephone: 98 21 8220 8333
Fax: 98 21 8874 9505
ParsOnline Network Operations Center
224 Khoramshahr ave., No. 6C
Tehran 15337, Iran
Telephone: 98 21 8220 8333
Fax: 98 21 8874 9505
22.214.171.124 is the IP address you have a ran a report for on May, 24, 2017.
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text: Some of the warranty clauses covered in your hardscaping contracts? How much tolerance do you put in for settling? 1/4"? Joint sand? How long do you cover it staying in the joints? I offer a 5 year warranty, I pretty much fix anything that would go wrong to keep my customers happy, but I was just wondering about specific clauses some of you might use. Dan


text:
High School Musical: 800-pound gorilla meets 98-pound weakling
I gulp teeter on the brink of being a High School Musical fan. After enduring marathons of dreck like The Wiggles and the creepy Booba as the operating cost of being a dad, HSM seems like West Side Story, only, you know, not as good. The flick is bubbly and precocious, and even a little subversive in its way, sneaking a couple of life lessons past our youths finely tuned anti-message filter. Musicals subversive poster child is dog-faced beauty Ashley Tisdale, whos blonde but not dumb. Tisdales theatrical portrayal of a stuck-up bitch is smart and spot-on, though her idiosyncrasies are predictably damped down in the leaden sequel, High School Musical 2. (Yep, I caught that one, as well. Do I get any credit for not having a choice?) Heres Disneys core flaw: The studio may be the 800-pound gorilla of franchising, but unless the word Pixar is in the credits, its the 98-pound weakling of follow-through. HSM is the rule that proves theres no exception. Originally a left-field hit on the Disney Channel, Musical now rivals Hannah Montana for sheer money-printing power. Since its impossible for Disney to screw up commodification on this scale, it mucks up everything that made the thing a commodity in the first place. Doh! Or perhaps it just spreads itself too thin. Consider High School Musical: The Concert Tour. High School Musical: The Ice Tour. High School Musical: The Junior Novel. The High School Musical: Sing It! video game. The High School Musical: Get in the Picture reality-TV series. The High School Musical 3: Senior Year big-screener, coming this fall to a multiplex near you. High School Musical 4, now in the writing stages. Finally, theres Disneys High School Musical, a nationally touring stage adaptation of the original. The production does not feature the original cast, which seems like an important distinction for discriminating quasi-fans like me but wont mean squat to the franchises core audience of 8 to 14 year old girls. The reviews from other cities, all written by people who are not 8 to 14 year old girls, skew toward enthusiastic, which most likely means that theyre Disney apparatchiks. However, one writer, Jonathan Abarbanel of www.theatermania.com, captured, I think, why I didnt have an epileptic seizure after the fifth straight viewing of the DVD: High School Musical is something different for a Disney show; it's about real people in urban America, not about Africa or animals or mermaids. In fact, the show is resolutely old-fashioned in form. Old-fashioned? By jingy! If I had to be calf-roped and dragged screaming to the theater and held down in my seat by burly men with scars in order to watch a Broadway-style musical whose core appeal is to 8 to 14 year old girls, this would be it.
Tue., June 24, 7:30 p.m.; Wed., June 25, 7:30 p.m.; Thu., June 26, 7:30 p.m.; Fri., June 27, 7:30 p.m.; Sat., June 28, 2 & 7:30 p.m.; Sun., June 29, 1 & 6:30 p.m., 2008
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text:
Consumers regard hygiene as more important than other considerations when purchasing pet products, according to new independent research by online market research panel Toluna.
Consumers regard hygiene as more important than other considerations when purchasing pet products, according to new independent research by online market research panel Toluna.
Concern over cleanliness was ranked higher than ease of use, simple assembly and price, according to findings by Toluna for antibacterial protection specialist Microban Europe.
The sample product chosen for the study was a plastic cat litter box. The overall results from more than 350 consumers when asked to rank features by importance were:
- Hygiene (69.8%)
- Ease of use and convenience (52.8%)
- Simple assembly and disassembly (42.7%)
- Carbon filter to minimise odour (40.4%)
- Price (36.2%)
- High quality plastic (25.4%)
- Portability (20.9%)
- Colour and look of the product (12.7%)
Despite that the results are possibly as you would expect for a litter tray, Microban Europe's business development director Mike Langley claimed the results were a good indication of the priorities of consumer buyers in the pet sector on a range of products.
He said: "The spread of bacteria from pets is a concern to owners which is why they are concerned about hygiene […] Having antibacterial protection built into pet beds, carriers, litter trays, litter scoops, food and water bowls gives products an added level of protection against cross-contamination."
According to the company, these new pet sector results are broadly in line with general consumer product research carried out by Toluna earlier this year, which showed that 54.2% of consumers "strongly agree" that they would prefer to buy a product with built-in antibaterial protection while a further 18% "agree" – a total of 72.2%.
Mr Langley said: "This shows that there is a definite appetite among consumers for products of all kinds that have antibacterial protection, probably far in excess of the number currently available in most market sectors including pets."
- Antibacterial protection from Microban Europe is already used by pet product manufacturers, such as Pet Mate in the US where protection is incorporated into a range of bed and feeding products.


text:
Posted by zroger on
This project is not covered by Drupal's security advisory policy.
This project makes it easy to use phpsh within a Drupal environment. The "module" is just a set of drush commands to make this easier.
- drush phpsh-console
- Runs phpsh with a Drupal version-specific startup file. This puts you into an interactive php shell with Drupal fully bootstrapped. Requires a working phpsh setup.
- drush phpsh-ctags
- Builds a tags file using exuberant ctags. Maps the various Drupal-specific file extensions to the correct file type. This file can then be used by phpsh to give descriptions of Drupal functions. Requires exuberant-ctags.
Project Information
- Maintenance status: Minimally maintained
- Development status: Under active development
- Module categories: Developer, Drush, Utility
- Downloads: 623
- Last modified: 27 November 2014
- This project is not covered by the security advisory policy.
Use at your own risk! It may have publicly disclosed vulnerabilities.


text:
What does IFF mean in General?
This page is about the meanings of the acronym/abbreviation/shorthand IFF in the Computing field in general and in the General terminology in particular.
Find a translation for IFF in other languages:
Select another language:
What does IFF mean?
- Interchange File Format
- Interchange File Format, is a generic container file format originally introduced by the Electronic Arts company in 1985 in order to ease transfer of data between software produced by different companies. IFF files do not have any standard extension. On many systems that generate IFF files, file extensions are not important. An .iff extension is commonly used for ILBM format files, which use the IFF container format. Resource Interchange File Format is a format developed by Microsoft and IBM in 1991 that is based on IFF, except the byte order has been change to little endian to match the x86 processor architecture. Apple Computer's AIFF is a big endian audio file format developed from IFF. The TIFF image file format is unrelated.
Discuss this IFF abbreviation with the community:
Use the citation below to add this abbreviation to your bibliography:
"IFF." Abbreviations.com. STANDS4 LLC, 2017. Web. 25 May 2017. <http://www.abbreviations.com/term/46681>.


text:
Employment Law 2003
This textbook is a one-volume treatment of the basic analytical structure and legal policy issues informing U.S. employment law. The full range of the subject matter is examined with chapters on defining who are employees (as opposed to independent contractors); employment contracts; employment torts; workplace privacy; post-termination restraints and workplace intellectual property issues; employee benefits; wage-hour laws; occupational safety; workers' compensation; and unemployment compensation. Introductory chapters are also included on the economic analysis of employment regulation, employment discrimination, union organization, and collective bargaining laws. The book is designed as a complement for all leading casebooks on employment law, in that it approaches the issues in a comprehensive manner that will enable the student to understand how these laws interact in particular cases. Unlike other employment law treatises, this book moves well beyond the descriptive to empower the student in tackling difficult analytical and policy issues in the field.
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text:
Wordless Wednesday #14
>> Wednesday, January 6, 2010
The Killer Wrapping Paper never expects the Dive Under Attack
For more Wordless Wednesday, click here.
LOL! What a cutie!
Too funny; those cats of ours are all alike in one way or another. Ours were into packing boxes today...LOL
Thanks folks - Howie is such a doofus. We were opening presents and he came flying in from the kitchen and just dove full speed into the pile of paper. Luckily I had my camera handy.
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text:
UFC 185 : Rafael dos Anjos - Family Man
Description:UFC lightweight Rafael dos Anjos and his wife Cristiane talk about how they met and what a big part his family plays in his fighting career.
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Sorry, this item sold. You may also like:
This vintage full size bed was just refinished using CeCe Caldwell's all natural chalk and clay based mineral paint. Several colors were layered to create this beautiful, shabby chic look which gives this piece a whole new lease on life. We also have the matching dresser with a beautiful mirror that we can paint to match if you're interested. Perfect for a cottage, country home, guest room or anyplace you want that cozy romantic bed and breakfast comfort. Ships via Greyhound or available for local pick up.
- Listed on Aug 4, 2012
- 17 favorites


text:
Dads teach their kids so many important lessons: how to ride a bike, how to shave, and why it's a bad idea to shave while riding a bike. Surprise the guy who's seen it all with this Groupon.
$25 for $50 Worth of Unique Gifts and Innovative Products
Brookstone carries a plethora of electronic and home-decor gifts online and in each of their 300 stores. Choose from thousands of innovative products and unique Father's Day gifts for dads who love to relax, play golf, grill out, or travel. For example:
- App-controlled wireless spy tank ($149.99)
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- Dual-node cordless percussion massager ($229.99)
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- Talking remote meat thermometer ($69.99)
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text:
30 Players: Royals Deciding How To Utilize Top Prospect Matt StrahmThe Royals look to make a return to the postseason and will hope to get some help from one of their young pitching prospects.
Fantasy Baseball's Version Of The Final Countdown Is Upon You NowThere's just one more week to go in the 2016 Major League Baseball regular season, so pay attention very closely to what's going on in MLB this week.
Mondesi's Bunt Single Helps Royals Beat Angels, 7-5Shoemaker, who did not allow a base runner until the fifth inning, yielded singles to Alex Gordon and Paulo Orlando to start the seventh.
Skaggs Helps Angels Beat Royals, 13-0Mike Trout drove in three runs, and Johnny Giavotella had three hits, including two doubles, and scored three runs.
Pujols Drives In 4 As Angels Beat Royals, 6-2Pujols drove in two with a bases-loaded single during a four-run first, then added RBI singles in the seventh and ninth innings.
Trout, Escobar, Simmons Homer For Angels In 4-2 winEscobar, the Angels' leadoff hitter, drove Chris Young's 3-1 pitch to center field for his third homer of the season leading off the sixth to put the Angels ahead 3-2.
Giavotella's 3-Run HR Helps Weaver, Angels Beat Royals, 9-4Jered Weaver (3-0) allowed four runs and nine hits over six innings and struck out four.
Albert Pujols Hits 2 Home Runs In Angels' 6-1 Victory Over RoyalsPujols connected on solo shots in the third and fifth innings against Ian Kennedy.
5 Must-See Cities On Your Midwest Road TripA profile of the five must-see cities on a road trip through the Midwest
30 Players: Raul Mondesi Jr. Hopes To Find Room On Crowded Defending Champion RoyalsThe defending champs will look to get this speedy prospect some more time this season.
Dunkak: 2015 Royals Among Best Comeback Teams EverThe Royals came from behind eight times in their playoff campaign to win their first MLB World Series in 30 years.
World Series Notebook: Royals Win World Series With Another ComebackThe Kansas City Royals won their second World Series title on Sunday with a 7-2 win in 12 innings at Citi Field in New York.


text:
Vocational Degrees and Programs Offered in Delaware (DE)
Searching ...
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Automotive Technology
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- Training available in Technology and Skilled Trades, HVAC, Welding Technology, Electrical/Electronics, and more.
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- Courses focus on problem-solving and troubleshooting skills that can help prepare students for a career.
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Motorsports Technology - Diploma
YTI Career Institute , York
- Designated as a 2015 Military Friendly School by Victory Media.
- A private post-secondary institution of higher education serving south-central Pennsylvania and northern Maryland since 1967.
- Offers associate degrees in specialized business and specialized technology, as well as programs leading to professional certifications and diplomas.
- Gives each student their own career services specialist who helps keep them focused on their goals.
- Accredited by the Accrediting Commission of Career Schools and Colleges (ACCSC).
- Accredited
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- Transferable Credits


text:
(best price)
Raise up to 1.50%.
The Babyliss for Men 7057U 6 in 1 Professional Grooming Kit is a great enhancement to your daily grooming routine. A resilient titanium blade trims away unwanted hair neatening hair lines and ensuring you always look an... show more
Compare from 2 other stores, from £17.30 to £19.99
Raises up to 1.50% for charity
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text:
Active filters
Malala Yousafzai facebook cover photo is a special one for your timeline selected from the best available "Malala Yousafzai" FB cover photos all over the web. It is one among the hundreds of awesome Photography Facebook covers in our collection and is linked to tags - photography, malala yousafzai.
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text:
Bucksnort Blues [CD]
- Artist: Keith Sykes
- Release Date: 08/30/2011
Best Buy is dedicated to always offering the best value to our customers. We will match the price, at the time of purchase, on a Price Match Guarantee product if you find the same item at a lower price at a Designated Major Online Retailer or at a local retail competitor's store.Here's how:
- If you find a qualifying lower price online, call 1-888-BEST BUY and direct a customer service agent to the web site with the lower price, or when visiting a Best Buy store, one of our employees will assist you.
- On qualifying products, Best Buy will then verify the current price to complete the price match.
Exclusions apply including, but not limited to, Competitors' service prices, special daily or hourly sales, and items for sale Thanksgiving Day through the Monday after Thanksgiving. See the list of Designated Major Online Retailers and full details.
- Capt. Pete's Blues Cruise
- Texas Blues
- Hot Fed Ex Man
- Bucksnort Blues
- Unkind Blues
- City of Good Abode
- I Got That Going For Me
- Trouble Woman
- California Coastline (At Least for a While)
- Tonight It's Just Me and the Blues


text:
On Monday, Gene Haas took some time to talk more in depth about his plans to enter Formula One as the twelfth team on the grid.
CONCORD, N.C. – Gene Haas did not mince words on Monday.
He's determined to prove that a Formula One team made in America cannot only survive but thrive in the most competitive motorsports arena in the world.
The motivation for the 61-year-old industrialist is two-fold. Primarily, Haas, who owns one the largest CNC tool manufacturing operations, wants to market his products globally and F1 will allow him to "enhance his branding" on a greater scale than NASCAR, which is limited to North America.
"The ultimate goal is to take the image of Haas Automation and turn it into a brand that is desired and high-quality and known throughout the world," Haas said. "The ultimate goal would be to double our sales for Haas Automation.
"I think it's going to be positive. As an indicator, I'm using the relationship with NASCAR that we have here including the brands we have in the United States. We have a very good market share, good market penetration and it's as simple as to replicate that overseas."
Secondly, despite short-lived effort of the USF1 team, Haas is convinced that an American-based team can compete against the established F1 juggernauts of Europe. Haas feels that with the current F1 rules packages, the timing is right for an aspiring team to enter the series and dispel the notion that "Americans can't do it".
"I'm here to prove that we can do it, and we can do it with a budget and we can be efficient at it and we can win at it," Haas said. "That's what I'm going to try. I'm not saying that I'm better than anybody else. I just have a different way of doing it, and people that I work with think differently. That, I guess, is going to be the secret to our success in this business.
"We're going to spend our money wisely. We're going to do it with an American flair for design and efficiencies, and that's how we're going to control our costs. I don't ‑‑ we're not going to be a European‑led team. We're going to be an American‑led team and we'll do it the way we think is the most efficient."
Yes, this is an ambitious undertaking for Haas. He wasn't joking when asked about his budget that "it's going to be billions and billions" to be operational. And he has just over a month to inform the FIA as to whether Haas Formula intends to race in 2015 or 2016.
"We will announce in the next weeks, four to six, I would say, what we are doing," said Formula Haas team principal Guenther Steiner. "Then it's only eight months to go. So we need to do it rather soon.
"But we want to make the right decision. We don't want to jump and say wow, we got this one wrong and then fade."
Certainly, Haas' timetable will depend on the support of his technical partners. Similar to his introduction to NASCAR where he relied on Hendrick Motorsports to get up to speed, Haas will rely on the relationship of his potential F1 partners as well.
Formula Haas' home base will be in Kannapolis, N.C. adjacent to the existing Stewart-Haas Racing shop. The company is currently adding 150,000 sq. ft. With Haas Automation satellites in Brussels and Shanghai, there is already a global base, but Haas expects to have a secondary shop in either Germany or Italy likely dependent on whether he partners with Mercedes or Ferrari. Haas will likely use Dallara for his chassis, but his eventual goal is to develop the components to compete for the Constructors championship.
As for prospective drivers, in the beginning Haas would like to use racers that are already familiar with the current engine rules package then eventually phase in American talent. Steiner would prefer not entertainment drivers searching for buy rides but rely on racers with raw talent.
For now, Haas intends on maintaining a clean car free of sponsorship outside of the Haas brand. He believes that any additional support would "dilute" his marketing strategy. However, a five-year plan is in place to "make this a profitable enterprise" and that will involve additional sponsors in order "to make money and compete".
"I wouldn't be doing it if I thought I was going to fail," Haas said. "But I'll try it even if I do fail, but that's the challenge of it all. The challenge of it all is proving other people wrong. That would be the greatest satisfaction is being able to go out there and do what other Americans haven't done, which is, I guess, the definition of success."


text:
Mayor's Office of Communications
55 Trinity Avenue, Suite 2500 • Atlanta, Georgia 30303
FOR IMMEDIATE RELEASE: January 23, 2016
Media Advisory
Mayor Kasim Reed to Celebrate 35 New Security Cameras in the Atlanta University Center
Mayor Kasim Reed will join University Community Development Corporation Interim Executive Director Rita Gibson, Morehouse College President Dr. John Wilson Jr., Atlanta Police Department Chief Erika Shields, Atlanta Police Foundation President and CEO Dave Wilkinson and Atlanta City Councilmember Cleta Winslow for a ribbon-cutting ceremony celebrating the installation of 35 new security cameras in the Atlanta University Center (AUC).
This measure is a part of the Westside Security Plan, a collaborative effort between the Atlanta Police Foundation and Atlanta Police Department to deploy more than 100 cameras and license plate readers to help deter and solve crimes in West Atlanta neighborhoods.
The City of Atlanta invested $300,000 to install the cameras and each AUC university president contributed an additional $100,000 towards the initiative.
Tuesday, January 24, 2016
10:30 a.m.
For more information about the City of Atlanta, please visit http://www.atlantaga.gov or watch City Channel 26. Follow the City of Atlanta on Facebook and Twitter @CityofAtlanta. Follow Mayor Reed on Facebook and Twitter @Kasim Reed
HomeGovernmentResidentsVisitorsDoing BusinessNewsroomHow Do I...
© 2017
City of Atlanta, GA. All Rights Reserved.


text:
ED Magedson – Founder
Ripoff Report
Sedona Sacred Earth Private ToursP.O. Box 4041 Internet USA
Sedona Sacred Earth Private Tours Not Licensed To Do Business Sedona Arizona
Does your business have a bad reputation?
Fix it the right way.
Corporate Advocacy Program™
Complaint Regarding: Sedona Sacred Earth Private Tours, Clint Frakes, P.O. Box 4041, Sedona, AZ 86340; 928.254.9507; www.sedonasacredearth.com/
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What We Learned After Touring In Sedona. Many Top Tour Providers on TripAdvisor Fit Into These Categories:
I hope these links help people! Our Tour To Hopi Was Horrible/Unprofessional. We wish we would have looked somewhere besides TripAdvisor. The owner has been very insulting/unprofessional regarding our feedback.
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text:
ABC for Kids Concert
229,455pages onAdd New Page
this wiki
this wiki
ABC for Kids Concert is a Live Concert is VHS from ABC Shop
- Bananas in Pyjamas (B1 and B2)
- Mister Whiskers and Smiggy
- The Hooley Dooleys (David Butts, Antoine Demarest, Bruce Thorburn, Russell and Tickle)
- Play School (George Spartels and Benita Collings with Big Ted and Jemima)
- The Fairies (Rhapsody and Barnaby)
- The Wiggles (Greg, Murray, Jeff, Anthony and Dorothy the Dinosaur)
- Sesame Street (Big Bird)
- Thomas the Tank Engine (Thomas and The Fat Controller)
- Spot
- Pingu
- Johnson and Friends (Johnson)
- The Raggy Dolls (Lucy)
- Bob the Builder
- Arthur
- Brum
- Babar
- The Peaunts Gang (Charlie Brown, Snoopy, Lucy van Pelt, Schroeder Linus van Pelt and Sally Brown)
- Miffy
- Madeline
- Postman Pat
- Paddington Bear
- Magic Mountain (Dragon)
- Huxley Pig
- Polka Dot Shorts (Polkaroo)
- Bump
- Fireman Sam
- Noddy
- Ferry Boat Fred
With Songs
- Bananas in Pyjamas
- Mellow Yellow
- Bumping and the Jumping
- Mister Whiskers Plays on the Big Bass Drum
- Hooray For Mister Whiskers
- The Hooley Dooleys
- Roll Up! Roll Up!
- There's A Bear In There
- Wiggerly Woo
- The Wheels of the Bus
- Three Little Speckled Frogs
- Tapping in the Sun
- Get Ready to Wiggle
- Thomas We Love You
- Spot Theme
- Pingu Dance
- How Does An Elephant Walk
- Let's Have A Party
- Don't Be Anything Less Than Everything You Can Be
- Children's Themes Medley


text:
His 5.5 sacks lead the Sooners, and he ranks first with 7.5 tackles for loss.
Alexander has camped out in opponents' backfields, and because of that, also has the most quarterback hurries with five.
Not to mention he also has four passes broken up, yet another statistical category where he leads the team.
Along with that, Alexander has also made contributions with 28 total tackles, an interception, a forced fumble and fumble recovery.
So, to say he's having a breakout year would be an understatement.
And for more on it, he sits down with Sooners Illustrated right here.
Follow me at twitter.com/joeyhelmer10 or facebook.com/joeyhelmer.


text:
|Publication number
|Publication type
|Application number
|Publication date
|Sep 13, 1983
|Filing date
|Dec 15, 1980
|Priority date
|Dec 15, 1980
|Fee status
|Also published as
|Publication number
|Matthias L. Tam, Frank Z. Custode
|Original Assignee
|Rockwell International Corporation
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (3), Non-Patent Citations (1), Referenced by (21), Classifications (26), Legal Events (7)
|External Links: USPTO, USPTO Assignment, Espacenet
The subject invention relates to a new redundant cell for ROM use and method of manufacture compatible to manufacture of the ROM through VLSI processing.
While the subject invention provides a new product and process, a related process is set forth in U.S. Pat. No. 4,231,051 issued to the same inventors on Oct. 28, 1980. This is the closest known prior art and while it teaches employing a first and second layer of polysilicon in processing, it does not teach the provision of a redundant ROM cell comprising a FET and drain connected series resistor nor a process for fabricating the same, wherein the resistor is manufactured from the second undoped polysilicon layer and the cell is programmable by irreversibly changing the resistor from a high resistance value to a highly conductive value through the application of a biasing voltage when the associated FET is conductive.
The invention comprises a redundant cell for a high density ROM including a substrate, a gate with contact, a source with contact, a drain and resistor region comprising a polysilicon layer adjacent a drain doped region of the substrate, and undoped polysilicon layer comprising a resistor over the drain polysilicon layer and a contact over the undoped polysilicon layer for the drain and resistor. The resistor undoped polysilicon layer is characterized by high resistance until a biasing voltage is applied across the transistor and resistor combination with the transistor conducting which irreversibly changes the characterization of the resistor to high conductivity thereby providing a two-state device useful for logic programming. The invention further comprises a unique process for fabricating the redundant ROM cell.
FIGS. 1, 3, 4, 6, 7, 9-11 and 13 are cross-sectional drawings illustrating successive stages in the processing of a semiconductor wafer in accordance with the invention.
FIGS. 2, 5, 8 and 12 are plan views illustrating different masks utilized during the process of forming devices in accordance with the invention and the relative alignment of different masks with respect to the underlying wafer.
FIG. 1 is a cross-sectional view through a semiconductor wafer having a thermal oxide layer on its surface.
FIG. 2 is a plan view illustrating a portion of a polycrystalline silicon to monocrystalline silicon contact mask.
FIG. 3 is a cross-sectional view taken along line 3--3 in FIG. 2, illustrating the wafer cross-sectional structure following the removal of the unprotected oxide in accordance with the masking pattern of the mask of FIG. 2.
FIG. 4 is a cross-sectional view as in FIG. 3, illustrating the water cross-sectional structural, after the deposition of a polysilicon layer and the successive deposition of a silicon nitride layer.
FIG. 5 is a plan view illustrating an isolation mask utilized for defining areas where an isolating field ixode will be formed.
FIG. 6 is a cross-sectional view through the wafer taken along line 6--6 in FIG. 5, after removal of various layers from the areas which are not protected by the photoresist exposed through the isolation mask of FIG. 5.
FIG. 7 is a cross-sectional view as in FIG. 6, illustrating the wafer following the growth of the field oxide.
FIG. 8 is a plan view illustrating a gate contact mask.
FIG. 9 is a cross-sectional view taken along line 9--9 in FIG. 8, showing the wafer cross-sectional structure following the definition of the photoresist layer in accordance with the gate contact mask of FIG. 8.
FIG. 10 is a cross-sectional view as in FIG. 9, illustrating the wafer following the removal of selected materials which are not protected by the portions of the photoresist layer of FIG. 9 defined by the mask of FIG. 8, producing troughs extending to and exposing the surface of the silicon wafer and delineating the gate, source and drain polysilicon-to-silicon contact regions.
FIG. 11 is a cross-sectional view as in FIG. 10, illustrating the wafer cross-sectional structure following the growth of a crossover oxide in the troughs of FIG. 10.
FIG. 11a shows a mask for use in forming the resistor in series with the drain;
FIG. 11b shows the photoresist layer opened by the mask of FIG. 11a above the silicon nitride button to permit removal thereof by dry etching;
FIG. 11c shows the wafer after removal of the remaining photoresist and application of an undoped polysilicon layer, followed by a layer of silicon nitride;
FIG. 11d shows an opposite mask to that of FIG. 11a, which protects a portion of the silicon nitride to permit removal of the remainder of the layer through conventional processing;
FIG. 11e shows the resistor as comprising an undoped polysilicon layer in contact with a doped polysilicon layer in electrical connection with the drain;
FIG. 12 is a plan view illustrating a metalization mask for defining the metalization pattern of the wafer.
FIG. 13 is a cross-sectional view along line 13--13 in FIG. 12, illustrating the wafer following delineation of the metalization in accordance with the masking produced by the mask of FIG. 12.
FIG. 14 is an electrical schematic portrayal of the redundant cell of the subject invention.
FIG. 15 is an enlarged cross section through a fabricated redundant cell; and,
FIG. 16 is a schematic showing the manner of replacing a ROM cell by a redundant cell.
The final ROM redundant cell, developed by process steps of FIGS. 1-13 is depicted in FIGS. 14 and 15, and an application thereof in FIG. 16. A description of these figures initially may be helpful in understanding the more involved processing steps.
In FIG. 14, the VLSI fabricated transistor is shown as FET 1 and the coding resistor 2 is in electrical connection with its drain 3 by virtue of physical contact of drain doped polysilicon layer 4 and resistor undoped polysilicon layer 5 (FIG. 15). Processing of substrate 6 is otherwise carried out in accordance with the preferred process of U.S. Pat. No. 4,231,051, issued to the same inventors on Oct. 28, 1980. Source 7 comprises doped region 8 overlaid by doped polysilicon 9 and metal contact 10. Crossover oxide 11 surrounds gate region 12 comprising doped polysilicon layer 13 and contact 14. Also, drain region 15 includes contact 16 over undoped polysilicon 5. The critical voltage for changing the conductivity characteristics of resistor 5 is Vc which is a function of the polysilicon thickness of layer 5, temperature of deposition and doping concentration, following conventional NMOS techniques the polysilicon thickness may typically range from 3,000 to 6,000 A, the temperature of deposition may, for example, be 450 degrees to 650 degrees K and the doping concentration is 0++. By properly selecting these terms, Vc becomes +10 to 15 volts, (within the NMOS range of conventional voltages).
In operation, with the gate (FIG. 14) turned on by gating potential applied at G, a VD voltage of +10 to 15 volts will irreversibly change the normal high polysilicon resistance to a very low value for high conductivity. The high resistivity state may comprise a digital 0 logic storage and the high conductivity state may comprise a digital 1. Thus, electrical programming is available and its implementation does not require extra real estate because the undoped polysilicon layer 5 simply is formed over drain conductor 4. Also, redundant cells are not used until needed, so less cells are required as they may be field programmed to either logic state to replace a bad cell.
FIG. 16 illustrates a schematic for introducing redundant cells, such as 17, into memory array 18 to replace bad cells. Redundant array 19 includes many cells, such as 17, which may be electrically programmed as needed and annexed into the main ROM. Address Programming Logic 20 changes the bad cell address to that of a replacement programmed redundant cell in Array 19.
A preferred process for producing electrically programmable cells is set forth in FIGS. 1--13, as follows.
The technique which is the broad subject of this invention is widely applicable in the field of semiconductor fabrication. Many variations of the technique are possible in accordance with the individual objectives of various fabrication processes. However, the basic concept off the process is best illustrated by a specific example of the fabrication of a specific device. Consequently, the following detailed description will describe the fabrication of an N channel field effect transistor having a polysilicon resistor in series therewith to comprise a redundant cell in a ROM in integrated circuit. However, it will be readily understood that this process is equally applicable to the formation of P channel transistor cells.
We now turn to the detailed description of the preferred embodiment of the invention and in particular to FIG. 1 which illustrates a wafer 30 of clean semiconductor material (e.g.-silicon) 32 on which a dielectric layer 34 has been formed. The semiconductor 32 may either constitute the entire body of the wafer prior to the formation of the dielectric layer 34 or may comprise a relatively thin layer disposed on an appropriate supporting substrate. The treatment utilized to form the dielectric layer 34 may in part depend on the semiconductor 32. However, in accordance with the specific process steps of this preferred embodiment, the dielectric layer 34 should be one which is suitable for use as a gate dielectric of a field effect transistor (FET).
Semiconductor 32 is preferably silicon and the treatment preferably comprises thermally oxidizing the surface to form a silicon dioxide layer as the dielectric layer 34, suitable for use as the gate dielectric of field effect transistors. For the purposes of this description, it will be assumed that semiconductor 32 is already doped p-type. The dielectric layer 34 is then patterned in accordance with a predetermined pattern. This may be done by an appropriate process, but is preferably done using photoresist and photolithography.
A layer 36 of appropriate photoresist is provided on the wafer 30 on top of layer 34 and exposed to actinic radiation through a contact mask 100 (plan view FIG. 2) which includes non-protective areas 102 which render the photoresist thereunder soluble while the remainder of the photoresist is rendered nonsoluble. After exposure of the photoresist to actinic radiation through mask 100, the photoresist is developed with the result that photoresist 36 remains on the wafer everywhere except within those areas 38 of the wafer which were in alignment with mask areas 102. Layer 34 is not protected by the photoresist in those areas 38. The unprotected portions of layer 34 are removed in an appropriate manner. Where layer 34 is silicon dioxide, wafer 30 may be etched in a silicon dioxide etchant such as hydrofluoric acid until all of the oxide 34 in the regions 38 has been removed to leave bare unprotected silicon in the unprotected regions 38 while portions of the gate dielectric layer 34 are retained under photoresist 36. At the end of this removal step, the wafer appears in cross-section as shown in FIG. 3. Thereafter, the remaining photoresist 36 is removed.
As will later become clear, the portions, or areas, 38 of the surface of the silicon semiconductor layer 32 which are exposed in this step are those which will include the source and the drain, for example, of the field effect transistor to be formed. Doping of the silicon 32 may now be performed through these exposed areas 38. The remaining portions of the oxide layer 34, such as seen in cross-section to the left and right of the central, gate dielectric portion of the oxide layer 34 in the view of FIG. 3, are retained for the purpose of preventing undesired doping of the silicon layer 32 in those regions; in this example, those regions will be employed for thermally growing a field oxide to isolate the field effect transistor from adjacent devices.
As shown in FIG. 4, a layer 40 of doped polyscrystalline silicon (polysilicon) is deposited over the entire surface of the wafer and the polysilicon layer 40 is then coated with a layer 42 of silicon nitride. Layer 40 may be undoped and then doped in situ by exposure to high temperature diffusion or ion implantation. The polysilicon 40 is doped to have the same conductivity type as the source and drain will have (n-type in this example). The polysilicon 40 is then patterned, preferably by use of photoresist. As will later be seen, the use of the silicon nitride layer 42 is of substantial significance, since it permits selective oxidation of the exposed surfaces of the silicon 32. For example, field oxide regions may be thermally grown on the exposed silicon surface without using a mask, since the surfaces protected by a silicon nitride layer 42 are not readily oxidized. Particularly, silicon nitride requires a much higher temperature for thermal oxidation than does silicon. In another context, the silicon nitride layer can be etched preferentially or selectively as respects correspondingly exposed surfaces of silicon dioxide without masking, e.g., by using a dip etch. This factor contributes as well to the capability of achieving self-aligned gate and other contacts.
In accordance with the present example, the next step is to produce a desired pattern in the silicon nitride protecting layer 42. A layer 44 of photoresist is provided on the silicon nitride layer 42 and exposed to actinic radiation through an isolation mask 110 (seen in FIG. 5). The isolation mask 110 includes substantially rectangular protective regions 114 which cause the photoresist thereunder to be rendered nonsoluble while the remainder of the photoresist is rendered soluble as a result of the exposure of the photoresist to actinic radiation. The configuration of the isolation mask and its desired alignment with the polycrystalline-silicon to monocrystalline-silicon contact regions 38 are illustrated in the plan view of FIG. 5.
As is apparent from FIG. 5, the contact regions 38 as initially defined are of larger size than the final dimensions of the actual areas of contact to the substrate, as determined by subsequent processing steps; particularly, the protection regions 114 are of reduced length relatively to the distance between the outer boundaries of the contact regions 38 and of relatively reduced width. Subsequent processing, to be described, removes the polysilicon 40 and, optionally, may remove as well any of the oxide 34, which remains outside the perimeter of respective ones of the various protecting regions 114. Thus the area of contact between the polysilicon 40 and the silicon substrate 32, as afforded by protection regions 114 of mask 110, is reduced relatively to the substrate area 38 exposed through mask 100. Subsequent figures, however, retain these initial dimensions of the contact regions 38, and of the gate oxide 34, for purposes of illustrating the tolerance to mask misalignment afforded by the present invention.
The alignment of the isolation mask in the "A" direction is adequate if the protecting regions 114 do not extend beyond the upper or lower edges of the poly-to-mono-silicon contact regions 38 in FIG. 5. The alignment of the isolation mask in the "B" direction also has a substantial tolerance as the result of the succeeding processing steps. The left-hand and right-hand vertical edges of areas 114 in FIG. 5 must lie within regions 38. Ideal alignment in the "B" direction will make the distances 116A and 116B between the respective end edges of regions 114 and the outer edging of the respectively associated regions 38 equal. The exposed photoresist layer 44 is developed to uncover the silicon nitride layer 42 in the areas 46 as shown in FIG. 6, where the photoresist was rendered soluble (i.e. areas not under regions 114); conversely, the photoresist portions 44 which were rendered nonsoluble by the photolithographic exposure of the mask, (i.e. areas under regions 114), remain on the wafer.
Following the development of the photoresist 44 in accordance with the isolation mask 110, the unprotected portions of the silicon nitride layer 42 are removed in an appropriate manner. Next, the polysilicon 42 which was uncovered and thus exposed by the removal of the unprotected portions of the silicon nitride layer 42 is removed in an appropriate manner. Next, the portions of the oxide layer 34 which are uncovered and thus exposed by the removal of portions of the polysilicon layer 40 may be retained, or removed in an appropriate manner, (e.g.-etched away) as desired. As shown in FIG. 6, the silicon dioxide 34 is retained in the areas 46, and the field oxide will be grown further therewith. Removal of the exposed silicon dioxide 34 is desirable when there has been damage to it or its surface rendered irregular during the removal of the overlying polysilicon layer. In those cases, where the silicon dioxide layer 34 is removed, the surface of the silicon 32 is directly exposed and a field oxide is then grown directly on that exposed silicon surface. If the process is being performed on a bulk silicon wafer, the silicon of the wafer may be removed to a depth of approximately 0.5 microns in the unprotected areas. If the process is being performed on a silicon on sapphire or similar composite wafer, the silicon may be removed to a depth such that subsequent field oxidation of the remaining silicon will convert that remaining silicon to a silicon dioxide layer which is substantially level with the upper surface of the remaining portions of the polysilicon layer 40, thereby consuming substantially all of the remaining silicon in regions 46.
In the case of a monocrystalline silicon 32 as the substrate, the unprotected surface has a field oxide grown thereon to prevent inversion of that silicon surface. As before noted, the pattern of polycrystalline-silicon-to-monocrystalline-silicon contact mask 100 was selected to prevent the polysilicon 40 from contacting the monocrystalline silicon 32 in the regions which will form the field oxide, in order to prevent unintentional or undesired doping of the monocrystalline silicon under the field oxide. At the completion of the above removal steps, subject to the above observations, the wafer appears in cross section as illustrated in FIG. 6.
If it is desired to dope the field regions to control their inversion thresholds, this may be done by ion implantation prior to the removal of photoresist 44 in order that photoresist 44 may act as a self-aligned implantation mask. Thus, if a field implant is performed, the remaining photoresist 44 is removed after the implant is performed; otherwise, photoresist 44 is removed after the completion of the above-discussed removal steps.
Next, the wafer is exposed to thermal oxidation conditions for a period of time sufficient to oxidize the exposed silicon 32 to form a thermal field oxide layer 50 having an upper surface at a level which minimizes discontinuities between its upper surface and the upper surface of the remaining polysilicon 40. During this thermal oxidation step, vertical oxidation of the retained polysilicon 40 is prevented by the overlying silicon nitride layer 42. After the thermal oxidation process has been terminated, the wafer appears in cross section as in FIG. 7.
The wafer is then coated with a third photoresist layer 52 which is subsequently exposed to actinic radiation through a gate contact mask 120 (FIG. 8). Processing in accordance with the gate contact mask 120 renders the photoresist thereunder soluble over most of the area but renders the photoresist non-soluble under mask protective areas 124. Areas 124C each cover a central strip 52C of the photoresist over the multi-layered structure comprising the gate oxide 34 and the polysilicon 40 thereon. Areas 124D and 124S are spaced a predetermined distance from the gate mask area 124C and are of a size and configuration such that each covers a significant portion of the photoresist (52D and 52S, respectively) overlying respective ones of the individual polycrystalline-silicon-to-monocrystalline silicon contact areas 38 and extending outwardly therebeyond. This affords a misalignment buffer as regards mask 120 and specifically the areas 124D, C and S thereof relative to the boundaries 114. For proper ultimate device operation, the mask 120 must be aligned in direction "B" so that the (vertical in FIG. 8) edges 35 of the silicon dioxide layer 34, a portion of which will form the gate dielectric after subsequent processing, are both located where they are not protected by the photoresist 52 after it is developed. The mask 120 must be aligned in direction "A" so that the photoresist 52C spans the gate oxide 34 in the direction "A" so that there is a strip of gate oxide (i.e., dielectric) thereunder which is protected, from upper edge 33U in FIG. 8 to lower edge 33L in FIG. 8.
The mask protection areas 124C, relating to the gate, and 124D and 124S, relating respectively to the drain and source, are seen to be again over-size, i.e., larger in both width and length dimensions than those portions of the corresponding regions defined by the mask size 114. As will later be seen, the photoresist elements, or portions 52D, C and S, respectively resulting from the mask protection areas 124D, C and S ultimately will serve to define those portions of the silicon nitride layer 24 which are retained. Retained portions of the silicon nitride layer 42 ultimately will afford self-aligned contact areas to the gate, drain and source regions of the field effect transistor. As above noted, the precise alignment position in the directions A and B of the mask 120 is not critical but rather misalignment of mask 120 may occur, offsetting the actual positions of the particular areas 124C, D and S, from those ideal positions indicated in FIG. 8. The limits on such offset as may occur and be tolerated, are readily within the capabilities of mask alignment procedures in current technology.
After exposure of the photoresist through the gate contact mask 120, photoresist 52 is developed to remove the soluble portions of the photoresist. FIG. 9 is a cross section through FIG. 8 taken along the line 9--9 after development of the photoresist. After development of the photoresist, there are troughs 54 between each photoresist island 52C and the adjacent photoresist islands 52D and 52S. The islands 52C, 52D and 52S are over channel regions, drain regions and source regions, respectively, of field effect transistors. Additional islands would be provided for additional types of devices. The unprotected portions of the silicon nitride 42 are removed in an appropriate manner. The polysilicon 40 which is uncovered by the removal of the silicon nitride is removed, preferably with a minimum of attack on the monocrystalline silicon thereunder. The removal of the polysilicon 40 uncovers any portions of the gate oxide 34 which extend laterally beyond the edges of the overlying photoresist 52C. The unprotected portions of the gate oxide 34 are removed in an appropriate manner and the wafer appears as in FIG. 10. The removal of those portions of the gate oxide layer 34 which extend outside the boundaries of the photoresist protection portion 52C will cause removal of material from the field oxides 50 as well. However, the gate oxide 34 is so much thinner than the field oxide that such removal of material from the surface of the field oxide 50 is minimal and not detrimental. Nevertheless, the photoresist drain and source portions 52D and 52S, respectively are located preferably so as to overlap onto the adjacent field oxides 50 as shown in FIG. 10, thereby reducing the possibility of undercutting of the field oxide 50 adjacent the drain and source polysilicon material 40.
After the step of removing the unprotected portions of gate oxide 34 has been completed, the entire bottom of each of the troughs 54 is bare unprotected silicon 32, except at the ends of the troughs where they are over field oxide. The unprotected portions of the silicon 32, which are adjacent the gate or channel regions, are then doped n-type to form source and drain regions. This doping may be done by ion implantation, by solid-state diffusion from doped oxides or by any other appropriate method. The remaining photoresist 52 is removed from the wafer. This step of removing the remaining photoresist 52 may precede or follow the doping step, depending on the doping method utilized.
Next, the wafer is thermally oxidized to grow a thermal crossover oxide 60 on the unprotected portions of the source and drain regions (i.e. bare silicon 32). The silicon nitride protection layer 42 prevents thermal oxidation in those associated protected areas. Hence, selective thermal oxidation is performed while the portions of the silicon nitride layer 42 remain in place defining the contact areas to the source, drain and gate regions, preventing the development of any thermal oxide thereover. Ultimately, these remaining portions of the silicon nitride layer 42 are selectively removed such as by a dip etch which has no effect on the exposed oxide surfaces, thereby to expose those corresponding contact areas and thus afford self-aligned contacts to the source, drain and gate regions.
During the thermal oxidation for developing the cross-over oxide 60, the dopant introduced in the source and drain doping step will diffuse deeper into the monocrystalline silicon 32 and laterally within the monocrystalline silicon 32 and thus slightly under the gate oxide 34 under the polysilicon 40 of the gate. In fact, once the polysilicon layer 40 is deposited, on each subsequent occasion of heating the wafer to a temperature which is sufficient to induce dopant diffusion within the monocrystalline silicon 32, some of the dopant in the polysilicon 40 diffuses into the portions of the monocrystalline silicon 32 in contact therewith. During the oxidation step for developing the crossover oxide 60, therefore, impurities introduced into the silicon 32 from the doped polysilicon 40 diffuse further within the monocrystalline silicon 32 and create continuous source and drain regions 70 and 72 (shown in FIG. 11) at the corresponding polycrystalline-to-monocrystalline-silicon contact regions 38. Each of these regions 70 and 72 extends from under the polysilicon gate (34) out to the corresponding field oxide portions 50. However, if process temperatures are kept low, lateral diffusion can be reduced to a negligible amount, if so desired or preferred. Once the crossover oxide 60 has grown to a desired thickness, the thermal oxidation is stopped. The desired thickness may be one which minimizes surface discontinuities between the polysilicon 40 over the source and drain regions and the polysilicon gate, or one which minimizes crossover capacitance, or some other thickness. At the end of the thermal oxidation step, the wafer appears in cross-section as shown in FIG. 11.
There thus are provided at the surface, either an oxide (and particularly silicon dioxide), such as from the field oxide regions 50 or the crossover oxide 60, and selected small portions of the silicon nitride layer 42 covering contact areas to the source, drain and gate regions. This remaining portion of the silicon nitride layer 42 for the drain region is removed by selective etch to expose the underlying surface of the polysilicon layer 40 in the drain region.
Next the resistor in series with the drain will be formed. Referring now to FIG. 11a, mask 55 is shown having an opening 56 therethrough in alignment with the drain region covered by the silicon nitride button 42 to the right of the crossover oxide 60 and to the left of the right-hand field oxide 50. Photoresist layer 57 is deposited and mask 55 opens the region directly above this silicon nitride button 42', permitting its removal by dry etching without affecting remaining structure, as is shown in FIGS. 11b and 11c.
Once the nitride button is removed, and the photoresist stripped off, an undoped polysilicon layer 61 is deposited over the entire wafer making direct contact with the doped polysilicon 40 over the drain region as best seen in FIG. 11c.
Next a layer of silicon nitride 62 is laid down over the entire wafer and the opposite mask 55' (FIG. 11b) to that of FIG. 11a is employed to cover or protect the silicon nitride 62 on top of the undoped polysilicon 61 and permit removal of the remainder of this layer through the above-mentioned photoresist techniques and dry etching.
Thus, in FIG. 11e, the resistor comprises the undoped polysilicon layer 61 in contact with the doped polysilicon 40 comprising the drain conductor in electrical connection with the doped region 70. Hence, the wafer 32 now includes the three basic regions, i.e. the source, gate and drain with series resistor protected by silicon nitride buttons 42, 42 and 59, respectively.
A conductive material 62 such as metal or polysilicon is then deposited on the wafer. A photoresist layer 64 is provided on conductive material 62 and exposed to actinic radiation through a metallization mask 130 which delineates the geometry of the conductive material. Wherever it is desired to retain contact material 62, mask 130 has protective areas 134 which render the photoresist 64 thereunder nonsoluble. A portion of mask 130 is illustrated in FIG. 12. Areas 134D, 134G and 134S define the portions of conductive material 62 which will be connected to the drain via its series resistor 61 the gate and the source, respectively, of individual field effect transistors. The areas 134D, 134G and 134S over the respective drain, (resistor) gate and source regions respectively are of substantially greater lateral and length dimensions than the corresponding contact regions themselves. This is made possible by the isolation, or electrical insulation, afforded by the field oxides 50 and the crossovers 60, which permit these contacting areas to overlap from the contact regions themselves onto the adjacent oxide surfaces without any deleterious effect and particularly without any concern of shorting. Since these contacting metallized areas are defined by a single masking step, alignment between those contacts associated with a source and a drain (resistor) versus that associated with a gate is assured, and so long as a given contact area makes substantial contact with associated contact region, adequate electrical connection to all areas will be accomplished. In general, the only limitation is that the mask cannot be so far out of line such that one contact area overlaps from its intended contact region, extending not only across an intervening insulator (e.g. the cross-overs 60) but also into overlap positions on an adjacent contact region. Conventional manufacturing techniques are adequate for avoiding such an extreme case of mask misalignment which could render this result.
Ideal alignment between the areas 134 of mask 130 and the already existing structure is illustrated by the position of the underlying areas 38, and the positions previously occupied by protective areas 114 and 124 of masks 110 and 120, respectively. It will be understood that the actual areas present in the underlying structure do not correspond to the outlines 38, 114 and 124, but were determined by them at least initially. In particular, the areas 38 have been changed by the subsequent applications of (1) the isolation mask 110 which delineated changes in the location of three of the four boundaries of each region 38 and (2), and the mask 120 which delineated changes in the location of the remaining original boundary of the areas 38. In fact, for this ideal alignment illustration of FIG. 12, the drain, gate, and source contact regions, as they relate to the corresponding metallization areas, are encompassed in an evenly spaced, symmetrical manner by the metallization in those areas shown by the doubly cross hatched regions. It will thus be apparent from FIG. 12 that substantial misalignment of the mask may occur, yet, nevertheless, adequate electrical contact of the metallization areas on the exposed contact regions will be achieved, without concern of shorting.
Further, so long as mask 120 was properly aligned within mask alignment tolerances, the alignment of mask 130 in the direction "A" has substantial latitude, so long as a line from the center of the drain of each device to the center of the source of the same device is parallel to the direction "B".
Mask 130 must be aligned in direction "B" so that the gap between areas 134D and 134G of each device lies significantly on the crossover oxide 60. It is also necessary that the gap between areas 134G and 134S lies significantly on the crossover oxide 60. Proper alignment of the gap between 134D and 134G assures proper alignment of the gap between 134G and 134S. In this case what is mean by "lies significantly on the crossover oxide" is that a sufficient portion of that gap in on the oxide to assure that those conductive regions defined by areas 134D, 134G and 134S contact the area they are intended to contact and do not contact or short to the adjacent areas they are not intended to contact.
Once photoresist 64 has been exposed to actinic radiation through mask 130, the photoresist is developed. The removal of the soluble resist by the development process creates troughs 66 (as shown in FIG. 13) between the retained portions of the photoresist 64. The portions of conductive layer 62 which lie in the troughs 66 are not protected by the remaining photoresist 64. These unprotected portions of layer 62 are removed in an appropriate manner, thereby creating individual conductive lines. At this stage, the wafer appears as in FIG. 13. The remaining portions of photoresist layer 64 are preferably removed after the unprotected portions of layer 62 are removed.
It may be mentioned that self-aligned contacts are not essential to this invention, but such luxury does save real estate when the metal conductors are idealized. However, the principles of this invention are set forth in the claims as a measure of the intended scope of the invention.
|Cited Patent
|Filing date
|Publication date
|Jun 6, 1978
|Oct 28, 1980
|Rockwell International Corporation
|Process for producing minimal geometry devices for VSLI applications utilizing self-aligned gates and self-aligned contacts, and resultant structures
|May 29, 1979
|Oct 27, 1981
|Mostek Corporation
|Extremely low current load device for integrated circuit
|Title not available
|T. H. Ning, "Polysilicon Resistor Process for Bipolar and MOS applications", IBM Technical Disclosure Bulletin, vol. 23, (1980) pp. 368-370.
|Citing Patent
|Filing date
|Publication date
|Mar 3, 1993
|Feb 21, 1995
|Robert Bosch Gmbh
|Integrated circuit having an adjusting component and an adjustable thyristor
|Oct 7, 1993
|Apr 18, 1995
|Unisys Corporation
|Method of fabricating an electrically alterable resistive component on an insulating layer above a semiconductor substrate
|Nov 14, 1994
|Mar 5, 1996
|Unisys Corporation
|Method of fabricating an electrically alterable resistive component on an insulating layer
|Nov 27, 1995
|Nov 11, 1997
|Unisys Corporation
|Method of fabricating an electrically alterable resistive component using germanium
|Jul 11, 1995
|Jan 5, 1999
|Actel Corporation
|Method of fabricating an antifuse
|Feb 11, 1997
|Jun 1, 1999
|Actel Corporation
|Antifuse programmed PROM cell
|Oct 30, 2003
|Jun 6, 2006
|Stmicroelectronics S.A.
|Three-state memory cell
|Feb 11, 2003
|Sep 19, 2006
|Stmicroelectronics S.A.
|Memory cell with non-destructive one-time programming
|Feb 9, 2006
|Nov 18, 2008
|Stmicroelectronics S.A.
|Three-state memory cell
|Aug 19, 2009
|Jan 17, 2012
|International Business Machines Corporation
|Integration of passive device structures with metal gate layers
|Sep 14, 2012
|Jul 22, 2014
|Micron Technology, Inc.
|Resistive memory and methods of processing resistive memory
|Jun 12, 2014
|Sep 15, 2015
|Micron Technology, Inc.
|Resistive memory and methods of processing resistive memory
|Oct 30, 2003
|Jul 15, 2004
|Stmicroelectronics S.A.
|Three-state memory cell
|Feb 11, 2003
|Jun 9, 2005
|Luc Wuidart
|Memory cell with non-destructive one-time programming
|Feb 11, 2003
|Jul 28, 2005
|Michel Bardouillet
|One-time programmable memory cell
|Feb 9, 2006
|Jun 15, 2006
|Stmicroelectronics S.A.
|Three-state memory cell
|Aug 19, 2009
|Feb 24, 2011
|International Business Machines Corporation
|Integration of passive device structures with metal gate layers
|Mar 7, 1992
|Sep 16, 1993
|Bosch Gmbh Robert
|Integrated circuit state equaliser eg for sensor - has control for rendering equalising path conductive using Zener diode or discharge and thyristor circuit
|Oct 16, 2003
|May 19, 2004
|STMicroelectronics S.A.
|Three-state memory cell
|Feb 11, 2003
|Aug 21, 2003
|Stmicroelectronics S.A.
|One-time programmable memory cell
|Feb 11, 2003
|Aug 12, 2004
|St Microelectronics Sa
|One-time programmable memory cell
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Mar 16, 1981
Owner name: ROCKWELL INTERNATIONAL CORPORATION,
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text:
did people say about the first book in this series,
Tales from the Deed Box of John H. Watson MD?
"…delicately woven stories in the Conan Doyle tradition so that the reader cannot decipher where Conan Doyle's brilliant sleuth leaves off and where Ashton's begins. Truly a masterful addition to the Holmes legacy of wit, sleuthing and surprises!" Linda Rae Blair
"These are marvelous stories where all elements including descriptions of settings, characters and plot are done to perfection. The author has followed the approaches of the original Doyle stories to the extent that these could have been easily included in the original works." Dr Darold C Simms
"As a life long Sherlock Holmes fan, I can say I truly enjoyed these three new stories. Hugh Ashton does a great job in the tradition of Sir Arthur Conan Doyle." Vince Drexelius
"Mr. Ashton's offering of three stories, two of which are mentioned in passing by Dr. Watson in his well beloved chronicling of their adventures, are so faithful to the characters in these wonderful stories, it almost seems that Doyle himself has been resurrected." M C McColl


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Karak Tourist Hotel
No prices found through our partners. Please contact the business directly or check some of our recommended alternatives.
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TripAdvisor Reviews Karak Tourist Hotel Seoul
Travel Blogs from Seoul
"What are your post-graduate plans?"
... course).
To be honest, the paperwork associated with working abroad is downright awful, and I hope hope hope I can share that it was worth it at the end of this year. What with getting a background check, getting that background check apostilled by the Korean government, my fingerprints taken, my degree notarized and apostilled after a 6-week delay from my University to distribute said degree, my health forms completed and verified, my passport sent to NYC for my ...
Half day to the DMZ
... looks bleak and empty but then it is the borderland and the temperature today is -9C. There is a village visible across the zone but this is the famous for being a false village of facades where people used to be bussed in each morning to make it look occupied. You can look through binoculars at the guards on the other side. There is a place called Kaesong City which can also be seen. This is an industrial area where cheap North Korean labour is used in manufacturing. ...
Seoul Searching
... and save yourself a lot of queuing for a cable car. We did the loop, had a good look to see if we could see the pope and his masses, but alas all we could see was buildings as far as the eye could see (through the fog). We treated ourselves to a packet of jellybeans at the top and set off back down, stopping for a toilet break in the bathroom with the best views in Seoul of course.
Our feet just had enough left in them for one more walk so we headed to ...
Around in Gangnam
How could you come to Seoul and not visit Gangnam? You would do a horse dance like Psy for the very least! But unfortunately it was too embarrassing for Lou, so I was also banned from doing the horse dance... As a matter of fact, I was also banned from trying to speak in Korean as well, what ashamed?! I could at least show off my greeting skills... =)
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Taking One for the Team
They say I am taking one for the team.
But when have I been a part of the team?
When do I get a say in this?
That's the problem
I don't
I'm just a person on their team
Following their rules
And behaviors
None of them truly care about me
If they did
They would understand
They would let me speak
Have a voice
But they don't
I'm just a person on their team
Following what they say
And doing the motions
Sometimes I wish I could leave
Not say a word
And go
Like they would care
Or else they would have asked for my opinion
But I am just a person on their team
And they expect that I'll just put up with it
That I'll take one for the team
Well I'm tired of this
Thinking that they have this much control over me
Thinking that I don't care to them
And that I'm just a person on their team
News flash!
I'm my own person
And I'm on my own team!


text:
A British Airways flight was forced to make an emergency landing after two abusive women drunk on Malibu attempted to storm the cockpit it has been reported today.
The BA Boeing 737-400, which was on route to Tunisia, had to divert to Lyon to make an emergency landing. French police boarded the plane and detained the women.
According to a report in The Sun the women, aged 50 and 43, swore in front of children and refused to return to their seats.
They also reportedly attempted to force their way into the cockpit of the plane and were seen drinking Malibu from the bottle.
It is also alleged that they threatened to kill the family of one of the BA stewardesses on the flight and hid in the toilet at 30,000ft to smoke.
A passenger told The Sun: 'They decided they were going to meet the captain and marched towards the cockpit. It was very frightening.'
A British Airways spokesman told the Daily Mail: 'Monday's BA2664 service from Gatwick to Tunis was diverted to Lyon following the continued disruptive behaviour of two female passengers.
'Our customers and flying crew deserve a safe and enjoyable flight experience. We do not tolerate any disruptive behaviour on board our flights.'Reuse content


text:
Person Dies After Fight in The Bronx
A 37-year-old tourist who was visiting his girlfriend in the Bronx was killed following a drunken argument Friday morning, a law-enforcement official said.
The incident occurred around 12:10 a.m. at Guerrero Bodega in the Belmont section of the Bronx. The name of the victim hasn't been released pending family notification.
Police released photographs from surveillance video of a suspect in bluejeans and a white tank top.


text:
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text:
ED Magedson – Founder
Ripoff Report
Omni FinancialNationwide USA
Omni Financial Got me for $2,000 Nationwide
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I got in trouble with the IRS over my company going out of business back in the year 2000. Omni Financial promised to get me out of almost all of my debt for $2000. I agreed and got nothing. I mean they absolutely did not one thing. I ended up hiring a local attorney who did set me up on a payment plan. I sure could have used that $2000 for other needs in my time of need. I would love to file a class action suit against them and am here to tell all DO NOT USE THEM. They are simply a rip off, and I can't believe from reading these reports that they are still in business.
This report was posted on Ripoff Report on 05/18/2014 08:30 PM and is a permanent record located here: http://www.ripoffreport.com/reports/omni-financial/nationwide/omni-financial-got-me-for-2000-nationwide-1147779. The posting time indicated is Arizona local time. Arizona does not observe daylight savings so the post time may be Mountain or Pacific depending on the time of year.
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Hey ladies and guys,
I just woke up yeah I know I am a sleep hog, lol. I founed a big box in my room. I knew it had to be my Silhouette Cameo. I look on amazon tracking page it was sent out yesterday and got here this moring at 11:30am. My dad must have put it in my room for me. I was expecting it on monday or sometime next week. I guess amazon can be quick about some of their orders. I order it on tuesday it was shipped out wednesday now here at my house.
I know I'll be playing around with it tonight and all weekend. I might ask some of you for some advice about the machine. I know some of you have one.


text:
AN elderly woman has been taken to hospital with critical injuries suffered when a car reversed into her at Port Noarlunga this afternoon.
The woman, aged in her 70s, was sitting with her husband outside a bakery in Ward St when a Hyundai sedan reversed on to the kerb and hit her about 12.30pm today, police said.
She was taken to hospital in a critical condition.
Police are investigating the circumstances of the crash.
Anyone who witnessed the incident is asked to contact Crime Stoppers on 1800 333 000.
Originally published as Elderly woman badly hurt by reversing car


text:
Kennedys had such a good relationship with Spanish firm Araúz de Robles Y Vélez Abogados (ARV) that it decided to take it over in October 2005 after a five-year formal alliance.
Kennedys Spain" class="inline_image inline_image_left" src="/pictures/web/images/6586_15_kennedys.gif" />Turnover: €2m (£1.35m)
Managing partners: Jose Maria Araúz and Jesus Vélez
Total number of lawyers: Six
Total number of partners: Three
Main practice areas: Insurance, reinsurance, litigation, commercial, shipping
Clients: American International Group, Axa, Bouygues International, Generali Group, Lloyd's syndicates, Winterthur
Offices: One
Location: Madrid
Kennedys had such a good relationship with Spanish firm Araúz de Robles Y Vélez Abogados (ARV) that it decided to take it over in October 2005 after a five-year formal alliance.
Dual-qualified partner Alex Guillamont was transferred from London to Madrid to help launch the Spanish offering, working with managing partners Jose Maria Araúz and Jesus Vélez.
"The association was going well," says Guillamont. "After a while someone said, 'Hey Alex, you're a Spaniard, go and open the Madrid office'."
Kennedys uses the Madrid office more as a resource for international clients rather than as a springboard for a raid on the Spanish insurance market. Potential conflicts with established clients bar the office partners from jumping into the local market for new clients.
Instead the three Spanish partners rely on London partners Philip Hartley, Iain Morrison, Nick Thomas and Michael Walker to keep a flow of work coming from the firm's key clients, which include Axa, American International Group (AIG) and Winterthur.
Guillamont says: "We're not here to act for everyone, we want to be loyal to the people who helped. If AIG or Generali have a problem out here then they appoint us to the matter."
The Madrid office also liaises with Latin American alliance firms to handle any legal matters across the pond.
So far the strategy has worked and the office has plans to double its six lawyers within a year.
"It would be nice to have more three to eight years' PQE lawyers so the gearing is more rational," says Guillamont.
At the moment the Madrid partners have to make do with one associate each, but the office recently brought in insurance litigation specialist Isidoro Ugena as a senior associate.
The partners are also looking to move into larger premises to accommodate the growth in numbers.
Financially the office has outperformed the expectations of Kennedys' London management.
Guillamont says: "I think the people in London were expecting us to be making a loss, but we're not. We're happy not to be a burden and we just want to keep it that way."
Going forward, Kennedys wants to focus on strengthening its presence in the growing economies in Latin America. Argentina, Brazil, Chile and Mexico attract the most attention from clients and so are high up on the list of priorities for the firm.
Although the Madrid office coordinates relationships with local firms, Guillamont says Latin lawyers prefer to conduct business face-to-face. According to Guillamont, this could lead to stronger ties and possibly new firms joining the Kennedys alliance.


text:
The 64-year-old attorney is winding down his role this summer as head of the $700 billion Troubled Asset Relief Program, as he takes over the doling out of funds to those affected by the April 20 oil spill.
Before TARP, Feinberg managed the September 11 Victims Fund, deciding how much each family would receive, working three years and providing $7 billion to 97 percent of those affected.
Dealing with those families took an emotional toll on Feinberg who said he had to change his hard-edged legal approach, eventually gaining the trust and respect of the family members.
In an interview earlier this year, Feinberg said he misjudged how to handle the cases and "for the first year, I was at odds with these families. I had a lawyer's disposition in trying to deal with families in grief and anger."