text:
|Message view
|« Date » · « Thread »
|« Date » · « Thread »
|"Dennis E. Hamilton" <orc...@apache.org>
|Moderating AOO Public Lists - #1 Setting Up
|Mon, 10 Sep 2012 19:20:35 GMT
[To support current interest in lists and their moderation, I've compiled some tips on what to expect and how to operate as a moderator. The version for private lists has been well-received. I am now posting this public-list version for information and wider review.] Here are some tips for starting as a moderator on any Apache OpenOffice public lists. This may be old news for current moderators. I am providing it for the benefit of newcomers and the curious. After any improvements that are suggested, I'll consolidate these in a place where they can be found for future reference. 1. MODERATOR WORKLOAD The mailing list moderation system is e-mail driven. The needs for moderation arrive in the moderators in-box as messages from the list robot. Moderators may also receive messages that are directed to them via the list's owner address (i.e., <listname>-owner@ incubator.apache.org). It is not necessary to read the lists often or in their entirety. It is useful to keep an eye on lists to ensure there is not some technical issue to report. Participating on the list is not a requirement for moderation. Being a moderator does not even subscribe you to the list, although moderators of private lists certainly need to be subscribed to those lists. There are only two kinds of moderator mails from the list robot: requests for approval of posts from non-subscribers and subscription requests (only for private lists). On public lists, subscription does not require any moderator action and none is requested by the list robot. 2. MODERATOR E-MAIL ADDRESSES When starting as a moderator, it is important to choose an e-mail address where you will receive moderator-directed mail. It works best if this is an e-mail address that you can also use to send e-mail from. If you use an e-mail address that is handled by a forwarding service, it is desirable for you to be able to send e-mail from an account of yours that allows that e-mail in the "From:" entry. For ASF Committers, the ideal e-mail address is the Apache Account Name/ID address, <name>@ apache.org. When a moderator e-mail is to be added, removed, or changed, the procedure is the same: * Open a JIRA task ticket on the Infrastructure project, with component "Mailing Lists." This is usually done by a PPMC Member using <https://issues.apache.org/jira/secure/IssueNavigator.jspa>. * Request any e-mail addresses to be removed (and at whose request/authority, if they are not yours). * Request any e-mail addresses to be added. * TIP: To make this easier in managing your own address in the future, use an e-mail of a forwarding service where you can update the forwarding yourself without changing the e-mail address used by the mailing-list robot. You can use the first step (below) to confirm that the forwarded e-mail address is recognized properly. The JIRA tickets are usually acted-upon within 24 hours. 3. THE FIRST STEP The first new-moderator action is to send an e-mail to <listname>-help@ incubator.apache.org Send that e-mail from an account that has your moderator-listed e-mail as its From: address. (If there is no such account for sending, but you can receive at your moderator e-mail, use a sending e-mail account that allows you to specify a different From: address.) When the e-mail robot recognizes that the request is from a moderator e-mail, it will send a moderator version of the list help message. The subject will be "Moderator help for <listname>@ incubator.apache.org". Save that e-mail. Remember how easy it is to do that again when needed. 3. IF THIS DOESN'T WORK, send a note to the existing moderators at <listname>-owner@, and we'll see how to sort it out. If there is no response within one day, communicate with one of the existing moderators to work with you in resolving the difficulty. - Dennis
|View raw message


text:
How to Decipher Roman Numerals?
Reading the number MMDCCLXVII would have been no problem for someone in Ancient Rome.
How to Use Roman Numerals?
Roman Numerals are numbers in a system. Surely everyone knows that I is 1, II is 2, III is 3, and IV is 4, but do they know that V is 5, or that X is 10? If you don't know that and the numbers that...
Read More »
How to Convert Roman Numerals to 1,2,3s?
Roman numerals were the standard numbers used in Europe until the Arabic numbering system came to the forefront around 900 A.D. The Roman numeral system is comprised of seven characters -- letters ...
Read More »
How to Learn Roman Numerals?
A Roman numeral is just an alternative way to represent numbers. Originating in ancient Rome, it is now slightly modified to produce the system we use today. Follow the steps below to know how it w...
Read More »
How to Convert Roman Numerals?
Roman numerals is a system of numbers which uses the letters of the alphabet.[1] It is still occasionally used today, especially when representing years.

subset: commoncrawl


text:
Cheap Cartier glasses Cartier Rimless Eyeglasses 118 [140650nline] - Cartiers creativity, design group studio in Paris, cartier glasses according to Louis. Cartier (LouisCartier) of the original and constantly develop new ideas, pieces of pieces of finished products are admirable. cheap cartier sunglasses, Cartier products are subject to stringent manufacturing and testing process to ensure that the problem is not
shop for cheap designer jeans, cartier glasses, name brand shoes, sneakers for sale AAA Cartier Glasses Frame-028 [916795] - Product name:AAA Cartier Glasses FrameMinimum Order Quantity: 1 Piece/PiecesOrder: Small, big and mix order acceptedQuality: Best quality in the market Packing:Depends on different items 100%original packing More quantity,More discount! Very wide selection of material,good looking,comfortable wearing,2012 New styles,Fashion sunglasses,High quality fashion sunglasses The sunglasses come with an original carrying case,
Gucci outlet Gucci large tote with double [250160-gucci] - large tote with double handles, signature web loop, and inside pocket. 45 x 11 x 40 cm.beige/ebony GG plus with green/red/green web and light brown leather trim.
Discount Shop Ray Ban Sunglasses Shield Black Yellow Stripe Frame for sale
Low Cost Ray Ban Sunglasses Wayfarer White Frame Deep Grey Save: 79% off
Outlet Online Ferrari Visor Sunglasses Tan Lens Black Frame cheap price
Outlet Online Store Chanel Sunglasses AAA Black Frame
Oakley Black Scalpel Sunglasses Online Shop
sale Oakley AAA Oil Rig Black Frame Multicolor Lens 50%-80% off
Online Cheap D&G Sunglasses Dolce & Gabbana AAA Sunglasses White for sale
how to buy cheap Oakley AAA Antix Black Frame Deep Grey Lens Save: 75% off
Nes Ray Ban Aviator AAA Sunglasses Gold Fine Frame On Sale
Great deals 2014 Ray Ban Wayfarer AAA Sunglasses Yellow Frame Grey Lens 50%-80% off
High Top Oakley Asian Fit Black Frame Grey Lens for sale
Dolce & Gabbana Irregular Sunglasses Brown Save: 79% off
Cheap Wholesale Louis Vuitton Butterfly Sunglasses Deep Red On Sale
Ray Ban AAA Sunglasses Aviator Yellow Frame Transparent Lens 50%-80% off
2014 Cheap Chanel Sunglasses AAA Light Purple with high quality
Nes Prada Rectangular Light Brown Sunglasses Save: 75% off
Outlet Online Carrera Aviator Sunglasses Brown Clearance Sale
Cheap Wholesale Carrera Aviator Sunglasses Red In Special Price
Cheap Online Oakley Pro M Frame Sunglasses Deep Blue Online Shop
sale Oakley Grey Frame Deep Blue Grey Lens Asian Fit
Low Price Oakley Half Jacket Black Frame Yellow Red Lens On Sale
Oakley AAA Silver Frame Blue Lens Commit 50%-80% off
where to buy Low Price Ray Ban Aviator Sunglasses Deep Purple Frame
Online Cheap Prada Sunglasses AAA High Quality Light Grey White Gold In Special Price
Low Cost Prada Sunglasses AAA High Quality Coffee For Sale At Discount Price
where to buy Low Price Oakley AAA Black Frame Deep Grey Lens Sunglasses
Outlet Factory Gucci Deep Brown Oval Sunglasses 50%-80% off
Adidas Adivista L Sunglasses Wine Red 50%-80% off
Outlet on sale Oakley Pro M Frame Sunglasses Red with high quality
Discount Shop Chanel Rectangular Sunglasses Brown Big Discount


text:
Each month, Rated People connects over 50,000 homeowners with quality tradesmen - simply enter your job details in the form above to get started.
We'll match your job to the relevant tradesmen in your area - those interested will pay to see your contact details and call you to quote.
As each tradesman expresses interest in quoting on your job, we'll send you their profile and ratings to help you choose the right one for you.
After the work is complete, return to the site and rate your tradesman based on their quality of work, reliability and value for money.
Tree Surgeon
Added 30/03/2017
5ft crown reduction from a greengage tree and an apple tree, and the waste disposed of.
Tree Surgeon
Added 30/12/2016
our apple tree has 2 large trunks. one main one and a side shoot that has been left to grow....
Tree Surgeon
Added 28/05/2016
We have a plum tree in the back garden which has grown out of shape and needs trimming back...
Tree Surgeon
Added 11/01/2016
The tree stump is about 3-4 feet in diameter. The surrounding roots have been dug out as much...
Tree Surgeon
Added 05/12/2015
We have a medium sized tree in our front drive which needs to be cut down. The main trunk is...
Tree Surgeon
Added 02/08/2015
I need approx 20m of overhanging branches and hedging cut back. The trees and hedges are growing...
Managing your job is easier with the Rated People Homes App, download it today.


text:
Have you ever faced such situation when some beautiful music or song is playing beside you in public place but you still are not able to get the lyrics to search about it on the internet ? and you are like " What song is this stuck in my head ? I don't remember the lyrics ". Anyways, let me tell you this is very common, I remember when last time I was in a restaurant and a beautiful song of some other language was playing in the background, at that time I was like I need to get this song any how but crap I had no idea how to get it. So I started searching for any work around on Google and got to know that there are few song identifier apps for android by which we can simple turn them on when the music is playing and they will automatically judge the correct song and search them on the internet for you and will even tell you the lyrics, so that you can download it by yourself as well. Isn't cool ? 🙂 .
Music Recognition tools were previously limited to online or for desktop but as the digital world is shifting to mobile devices so now song identifiers are even available for android and iOS. The beauty of these music identifier apps is you even don't need to know title or name of the song. Music recognition apps will take care of everything once you make them listen to the music for few seconds and from now on you will not say "What song is this ? " or "What is this song ?" . I have come up with 8 best free song identifier apps for android , music recognition apps android, and listing them down below.
Must See: Top 20 Music Downloader Apps for Android
Top 10 Free Voice Recorder Apps For Android
Top 8 Song Identifier Apps For Android:
SoundHound in one of the best song identifier apps for android users. In this free app, you can search, discover and play music. You can also navigate in a hands-free search and assistant mode with "OK Hound…". You have to say what you want with this app this app perform the action what you say. Like if you want to play music say "OK Hound, please play Hello by Adele". So this is easy to use, user-friendly and amazing free app. You can also save the song in any playlist, create playlist, add the song in that playlist. So this app is an amazing knowledge base free song id android app.
Recommended: Top 10 Music Making Apps For Android
Musixmatch – Lyrics & Music:
Musixmatch is an amazing best free music identifier app for android users. With the help of this app, you can enjoy the lyrics of the song. There are world's largest collection of song lyrics used by millions of people to get instantly synchronized lyrics for Youtube, Spotify, Pandora and more. You can get lyrics in your favorite language in time with the music. You can also search the music with your favorite music title, artist name and others. With the help of this song identification android app you can easily search lyrics of your favorite song.
Shazam is one of the most popular apps used by hundreds of millions of people each month. With the help of this app, you can search your favorite music by title, favorite artist, and videos. There is a Visual recognition feature which works as a QR code reader. You can also link this app with Google Play and Amazon stores for a quick play of the song.You can search any of your favorite song in only one tap. This app also work in offline mode with its offline feature you can get a song and search that perticular song when you will be online.
MusicId is a top most free music-finding app for android users. For using this app you have to install this app on your smartphone and hold your smartphone near any audio device and musiciD will tell you that particular song. This app has a good feature that it add a note to yourself so you can remember WHY and WHERE you identified that amazing song. This is best song identifier app for android and you can search any song very quickly. You can also search the song of your favorite singer, and artist.
Bird Song Id:
Bird song id is most popular app for music identifier app. This automatic recognition is a little like Shazam for birds. There are collections of voice of popular birds so this can identify the voice of the birds.This app needs good quality recordings to work well so you have to record the voice when a single bird is singing. If you want to enjoy this app you must have go t0 close to the bird without disturb them. Bird Song id help you to find the realted voice of the perticuler bird and helps you identify a wide variety of birds. You can also get the difference between voice of two or more birds.
Song Identify:
Song Identify app is a best song identifier apps for android users. You can use this app easily and you can start your favourite music recognition app on your smartphone directly from your SmartWatch. You can use this aap with most popular app like as musiXmatch, SoundHound, SoundTracking and others. This app is an interesting and amazing app for android users
TrackId is best song identifier app for android. This app tell you what song you are listening and which song you listen most. This app is also use as offline mode so if you have a problem of internet then this app capture that track and recognise that track when you will be online. So this app also works in offline mode. This app is so fast so you can get song quickly. This free song id android app can help you to find name of artist, singer and other details of the perticular song.
Recommended: Top 10+ Music Streaming Apps For Android
Music Recognizer Identify Song:
If you are travelling and sudden you hear a song track and you love that track but after some time you forget what was that track so Music Recognizer identify song help you at this situation. You get that track in this app and after some time you can find that perticular song. With the help of this free song identifier apps you can also search the name of artist, singer, and other important information of that perticular song. So this app help you and should be better song identifier app for android.


text:
Setting your default requires the storage of a cookie for the purpose of remembering your choice.
For more information, please read our Privacy Policy.
See how Invesco can help you think beyond average.
Insights and Opportunities
Explore compelling insights and strategies that seek to capitalize on today's market.
Invesco White Paper Series on the Active/Passive Debate
Income Opportunities
Looking for income? Generate a personalized list of strategies to consider in three easy steps.
Download our iPad App
Invesco's free app for iPad® gives you the information you need on the go. Visit the App StoreSM and search for "Invesco US."
Learn more about Invesco and our "investors first" approach.
View forms and documents
Our lineup of closed-end funds are available on stock exchange and sold on the open market and offer income-oriented investors access to a wide range of investment strategies, including municipal, corporate, investment-grade and floating rate bonds.
May 1, 2017
April 3, 2017
March 1, 2017
23 hours ago
3 days ago
4 days ago
You are now leaving invesco.com. Invesco does not guarantee any claims or assume any responsibility for any of the content.


text:
H.R.3147 - Counter-Terrorism and National Security Act of 2007110th Congress (2007-2008)
|Rep. Wilson, Heather [R-NM-1] (Introduced 07/24/2007)
|House - Judiciary
|Latest Action:
|08/10/2007 Referred to the Subcommittee on Crime, Terrorism, and Homeland Security. (All Actions)
This bill has the status Introduced
Here are the steps for Status of Legislation:
- Introduced
Subject — Policy Area:
- Crime and Law Enforcement
- View subjects
Summary (1)
Text (1)
Actions (3)
Titles (2)
Amendments (0)
Cosponsors (4)
Committees (1)
Related Bills (0)
Summary: H.R.3147 — 110th Congress (2007-2008)All Bill Information (Except Text)
There is one summary for H.R.3147. Bill summaries are authored by CRS.
Shown Here:
Introduced in House (07/24/2007)
Counter-Terrorism and National Security Act of 2007 - Amends the federal criminal code to: (1) impose criminal penalties for providing material support to terrorists with the intent to facilitate, reward, or encourage terrorist activities; (2) include attempts and conspiracies in the prohibition against obtaining military-type training from a foreign terrorist organization and increase criminal penalties for such crime; (3) prohibit the kidnapping of a U.S. national overseas; (4) deny all federal benefits to anyone convicted of a federal crime of terrorism; (5) include federal crimes of terrorism in the prohibition against soliciting criminal activity; (6) provide enhanced penalties for terrorists offenses that result in the death of a person: (7) allow for the death penalty for terror-related crimes involving weapons of mass destruction (e.g., atomic and biological weapons); (8) increase criminal penalties for the murder of a U.S. national overseas and for providing financial support to terrorists; and (9) extend the authorization for wiretapping to all federal crimes of terrorism.
Amends federal transportation law to impose a fine and/or prison term of up to 10 years for taking actions that seriously threaten the safety of an aircraft or individuals on such aircraft.
Amends the Federal Rules of Criminal Procedure to allow multi-district search warrants in terrorism investigations.


text: Senor Tequila ADD TO Trip Planner Authentic Mexican menu; white cheese dip, salsa, fajita nachos; family owned and operated; lunch specials Get Directions Gas Calculator The handicapped accessible icon notates listings that are either partially or fully accessible. Please check with the property or properties you're interested in for specific information. Details Phone: 501-791-3888 Fax: 501-791-2022 Address: 4304 Camp Robinson RoadNorth Little Rock, AR 72118 Payment Accepted: VisaMasterCardDiners ClubDiscover CardAmerican Express Facilities & Features: Dining Type of Service: Menu Seating Capacity: 150 Entertainment Accessible Things to Do In North Little Rock EXPLORE Business Closed? Yes No Incorrect Information? Yes No What needs to be changed?


text:
3 Reviews For Organic Mineral Eyeshadow Refill - GOLD
Beautiful to blend with Bark and Seaweed. Adds a nice shimmer to under brow line. Will be buying it again.
Very gentle on the skin and nice to add a bit of shimmer to the eyelids. I also like to apply some at the inner corners of my eyes to bring together a darker shade on the lids.
Use this in the makeup palette. Suits my brown eyes adding a light sheen. Stays on well.


text:
Status: Open
Know more about this business than we do? Cool! Please submit any corrections or missing details you may have.Help us make it right
195251attr:deliveryrestaurantsfast foodrestaurant
Taco Bell is a chain of Mexican-style restaurants that serves a variety of food items and beverages. Its menu features a selection of tacos, burritos, gorditas, quesadillas, chalupas, taquitos, nachos and various platters. Taco Bell also offers specialty items, such as the Crunchwrap Supreme, as well as a special menu for children. It serves more than 2 billion consumers annually through over...
Check in to Taco Bell on Foursquare. Everyone's doing it.
Be the first NJ.com user to add photos or videos of Taco Bell
In Short
A pink and blue color scheme, white tile floors and hacienda-like arched windows combine for a subtle Southwestern motif at this fast-food chain. Founded in Southern California...
I normally work 3rd shift so 9-10 am is the time I frequent this site. The morning crew are so friendly...most appear to be moms. I rarely have a wait longer than 5 min. My order is always...
Awesome place food was hit and fresh food came out very fast Looks like they got new cashiers who r super friendly and also new crew team was alive and pumping food out fast Ty for great service
Dining Room Available, Drive Thru Available
The Profile Page for this restaurant is brought to you by the DiningGuide.com service. Taco Bell is located in Milltown.
Know Before You Go: Want to cut calories? Items that normally come with cheese and/or sauce can be ordered "fresco style," which substitutes with\nlighter fiesta salsa.
Save Money: Cut costs on your favorite dishes by ordering off the Big Bell value menu.


text:
You have no items in your shopping cart.
You have no items in your shopping cart.
This offers wine lovers a whole new level of storage flexibility. Flexi-Temp allows the top and bottom compartments to each be set at a temperature between 39°F - 65°F, independent of each other. Allowing you to store wine your way.
2 Year Manufacturer's Warranty


text:
The purpose of the Topanga Association for a Scenic Community (TASC) is to endeavor to maintain an orderly development of Topanga in keeping with its natural terrain and intrinsic beauty.TASC is an organization of residents and property owners in Topanga Canyon concerned about the future of our distinct rural community. We realize that Topanga hillsides and meadows are threatened by development and pressure on the community for growth is severe.
We understand that if new development is planned and controlled, it can occur without the wholesale destruction of the Canyon's scenic qualities and unique character. Homes can be built and roads provided for them without largescale grading or destruction of the natural environment.We invite your support and your membership in TASC. Active participation by Topanga residents and property owners is the best way to meet the challenges facing our canyon community.


text:
Lejeune Marine accused of killing wife in Alabama agrees to extradition
Suspect's alleged girlfriend also charged with murder
JACKSONVILLE, ONSLOW COUNTY - A Camp Lejeune Marine, accused of shooting and killing his wife in Alabama, had his extradition hearing Monday afternoon.
At the Onslow County Courthouse in Jacksonville, 23-year-old Marquis Cheatam agreed to go back to Montgomery, Ala. as soon as the Onslow County Sheriff's Office contacts Montgomery Police.
Cheatham, along with his alleged girlfriend, 21-year-old Dominique Atkinson, of Pender County, are both charged with capital murder. At Monday's extradition hearing, the judge ordered Atkinson to remain in North Carolina. Her next court date is scheduled for May 7.
Cheatam and Atkinson are accused of murdering Cheatam's 20-year-old wife, Ashley. She was found shot to death in Montgomery, Ala. on April 1.
Cheatam was arrested at Camp Lejeune, investigators said. He was on a three-day pass to leave the base when his wife was killed in Alabama, according to police.
Most Popular
- Son kills father, himself in murder-suicide in Morehead City
- One dead, two injured after early-morning shooting in New Bern
- Coast Guard calls off search for missing Hyde County boaters off Georgia
- Dudley man shot, killed early Saturday; Goldsboro Police investigating
- Travelers out in bunches for Memorial Day weekend


text:
FUSE Clearomizer Replacement Dual Coil Pack of 5
FUSE Clearomizer Replacement Dual Coil Pack of 5
Keep your FUSE e-cig working at its best with replacement dual coil Clearomizer heads. The bottom fed system means the dual coil is located at the bottom of the Clearomizer, offering more potent flavour and cutting down on the burnt taste sometimes associated with other replacement coils.
What's in the box
1 x 5-pack FUSE Clearomizer heads
Tech spec


text:
ED Magedson – Founder
Ripoff Report
Amerigas1027 Texas Palmyra Hwy, Ste B Honesdale, Pennsylvania United States of America
Does your business have a bad reputation?
Fix it the right way.
Corporate Advocacy Program™
This report was posted on Ripoff Report on 11/24/2012 07:13 PM and is a permanent record located here: http://www.ripoffreport.com/reports/amerigas/honesdale-pennsylvania-18431/amerigas-amerigas-honesdale-fraudulent-business-honesdale-pennsylvania-973263. The posting time indicated is Arizona local time. Arizona does not observe daylight savings so the post time may be Mountain or Pacific depending on the time of year.
Ripoff Report has an exclusive license to this report. It may not be copied without the written permission of Ripoff Report. READ: Foreign websites steal our content
Click Here to read other Ripoff Reports on Amerigas
If you would like to see more Rip-off Reports on this company/individual, search here:Search Tips
In order to assure the best results in your search:
Advertisers above have met our
strict standards for business conduct.


text:
Need a PTH Test in Park Ridge, IL? Simply order online 24/7 and get a fast, affordable PTH Test at a lab near you (Find More Locations):
What is a PTH Test?
A PTH Test is a lab test that measures the PTH level. People in Park Ridge, IL get a PTH Test for general screening or ongoing tracking.
How much does a PTH Test cost?
For current PTH Test prices in Park Ridge, IL, please CLICK HERE.
What does a PTH Test lab report look like?
For a PTH Test lab report, please CLICK HERE.
We are delighted to offer the PTH Test in Park Ridge, IL.
PTH Test in other cities near Park Ridge, IL:Amf Ohare | Chicago | Chicago Bmc | Des Plaines | Elmwood Park | Franklin Park | Glenview | Glenview Nas | Golf | Harwood Heights | Morton Grove | Niles | River Grove | Schiller Park | Skokie


text:
AXIS Capital Holdings has appointed Peter Wilson as its president of US Insurance. He will be responsible for the management of all of the company's US insurance operations, including the professional lines and property/casualty divisions.
To continue reading, you need a subscription to Intelligent Insurer. Start a subscription today for £655.
In-house feature articles, the archive and expert comment require a paid subscription. Subscribe now.
Want to give it a try? We are offering a two week free trial to the Intelligent Insurer website – register and select "Two Week Free Trial" to begin access to the full Intelligent Insurer archive and read the latest news, features and expert comment. Begin your free trial here.
Is your 2 week free trial about to end? Upgrade to a 12 month subscription for £655 now.
If you have already subscribed please login.
If you have any technical issues please contact support.
AXIS, US insurance, Wilson


text:
|Publication number
|Publication type
|Application number
|Publication date
|Oct 13, 2009
|Filing date
|Jun 16, 2006
|Priority date
|Mar 8, 2002
|Fee status
|Also published as
|Publication number
|Michael Todd Foree
|Original Assignee
|Asm America, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (99), Referenced by (12), Classifications (22), Legal Events (3)
|External Links: USPTO, USPTO Assignment, Espacenet
The present application claims priority under 35 U.S.C. � 120 as a divisional of U.S. application Ser. No. 10/093,882, filed Mar. 8, 2002 now abandoned, and hereby incorporated by reference in its entirety.
The present invention relates generally to structures for supporting semiconductor substrates in process chambers, and, more particularly, to susceptors for radiantly heated semiconductor reactors.
Semiconductor fabrication processes are typically conducted with the substrate supported within a chamber under controlled conditions. For many processes, semiconductor substrates (e.g., silicon wafers) are heated inside the process chamber. For example, substrates can be heated by direct physical contact with a heated wafer holder and/or by radiation from a radiant heating source. "Susceptors," for example, are wafer supports that absorb radiant heat and transmit absorbed heat to the substrate. Unless otherwise indicated, the terms "substrate" and "wafer" are used interchangeably herein.
In a typical process, a reactant gas is passed over the heated wafer, causing the chemical vapor deposition (CVD) of a thin layer of reactant material on the wafer. Through sequential processing, multiple layers are made into integrated circuits. Other exemplary processes include sputter deposition, photolithography, dry etching, plasma processing, and high temperature annealing. Many of these processes require high temperatures and can be performed in the same or similar reaction chambers.
Various process parameters must be controlled carefully to ensure high quality deposited films. One critical parameter is the temperature of the wafer during processing. During CVD, for example, there is a characteristic temperature range within which the process gases react most efficiently for depositing a thin film onto the wafer. Temperature control is especially critical at temperatures below the mass transport regime, such as about 500� C. to 900� C. for silicon CVD using silane. In this kinetic regime, if the temperature is not uniform across the surface of the wafer, the deposited film thickness will be uneven.
In recent years, single-wafer processing of large diameter wafers has become more widely used for a variety of reasons, including the need for greater precision in process control than can be achieved with batch-processing. Typical wafers are made of silicon, most commonly with a diameter of about 150 mm (about 6 inches) or of about 200 mm (about 8 inches) and with a thickness of about 0.725 mm. Recently, larger silicon wafers with a diameter of about 300 mm (about 12 inches) and a thickness of about 0.775 mm have been utilized because they exploit the benefits of single-wafer processing even more efficiently. Even larger wafers are expected in the future. A typical single-wafer susceptor includes a pocket or recess within which the wafer rests during processing. In many cases, the recess is shaped to receive the wafer very closely.
There are a variety of quality control problems associated with handling of substrates. These problems include substrate slide, stick, and curl. These problems primarily occur during placement and subsequent removal of substrates in high temperature process chambers, particularly single-wafer chambers.
Substrate "slide" or "skate" occurs during drop off when a cushion of gas in the susceptor recess or pocket is unable to escape fast enough to allow the substrate to fall immediately onto the susceptor. The substrate floats momentarily above the susceptor as the gas slowly escapes, and it tends to drift off-center. Thus, the substrate may not rest in the center of the pocket as normally intended, and uneven heating of the substrate can result. Such drifting of the substrate to the edge of a susceptor pocket causes local thermal anomalies where the substrate is in contact with the pocket edge and results in poor thickness uniformity, poor resistivity uniformity, and crystallographic slip, depending on the nature of the layer being deposited. Non-uniformities in temperature can similarly cause non-uniformities in etching, annealing, doping, oxidation, nitridation, and other fabrication processes.
During substrate pick-up, "stick" occurs when the substrate clings to the underlying support because gas is slow to flow into the small space between the wafer and the surface of the substrate support pocket. This creates a vacuum effect between the substrate and the substrate support as the substrate is lifted. Stick can contribute to particle contamination due to scratching against the substrate support and, in extreme cases, can cause lifting of the substrate holder on the order of 1 to 2 mm.
Substrate "curl" is warping of the substrate caused by radial and axial temperature gradients in the substrate. Severe curl can cause the substrate to contact the bottom side of a Bernoulli wand when a cold substrate is initially dropped onto a hot substrate support. Curl can similarly affect interaction with other robotic substrate handling devices. In the case of a Bernoulli wand, the top side of the substrate can scratch the Bernoulli wand, causing particulate contamination on the substrate. This significantly reduces yield. The design and function of a Bernoulli wand are described in U.S. Pat. No. 5,997,588, the entire disclosure of which is hereby incorporated by reference herein.
Cooling at the wafer edge causes the temperature of the wafer to be non-uniform. Since thin film deposition rates (and many other fabrication processes) are often strongly temperature dependent, especially for CVD in the kinetic regime, film thickness and resistivity will be non-uniform across a wafer processed under conditions of temperature non-uniformity. Consequently, there is a need for an improved substrate support that facilitates substrate pick-up and drop-off while promoting temperature uniformity.
In satisfaction of this need, the preferred embodiments of the present invention provide a substrate holder with gas flow to slow the descent of a substrate thereabove. As the substrate descends slowly, the substrate temperature is permitted to increase by convection to an extent high enough to prevent extreme curl when the substrate eventually makes contact with the substrate holder. The gas flow also serves to cool the substrate holder, further reducing the temperature difference between the substrate and the substrate holder. When the substrate makes contact with the substrate holder, the temperature difference therebetween is substantially reduced and/or eliminated, thereby reducing and/or eliminating thermal shock to the substrate. The resulting reduction in substrate curl not only reduces damage to substrates and equipment, but also helps keep the substrate centered. Pick-up of the substrate is facilitated by providing a gas flow to help lift the substrate vertically off of the substrate holder. This also prevents stick. Stick can be further prevented by providing one or more grooves and protrusions in the support surface of the substrate holder. Also, the substrate holder can be provided with centering means. For example, the holder can include outer gas passages for providing vertical gas jets just radially outward of the substrate periphery, for counteracting sideward slide of the substrate during drop-off processing, and/or liftoff. Gas passages and a gas supply system are configured to minimize stick, slide, and curl while still maintaining desirable thermal properties. Methods for supporting a substrate on the support are also provided.
According to one aspect, the present invention provides a susceptor for supporting a wafer within a reaction chamber, comprising an upper support surface configured to support a wafer, a plurality of gas passages within the susceptor, and a gas supply system. The gas passages have inlet ends configured to receive a gas flow from a source of gas, and outlet ends opening at the upper support surface. The gas supply system is configured to supply a generally upward flow of gas through the gas passages. The passages are configured so that such a gas flow would apply an upwardly directed force to a wafer above the upper support surface. The gas supply system is configured to supply a flow rate of gas sufficient to slow the rate of descent of a falling wafer above the upper support surface to a rate of descent no greater than one half of the rate at which the wafer would descend under gravity alone.
According to another aspect, the present invention provides a substrate holder comprising a susceptor and a gas supply system. The susceptor includes a plurality of gas passages and a support surface. The gas supply system is configured to supply an upwardly directed flow of gas through the gas passages. The gas supply system is configured to supply a flow rate of gas sufficient to slow the rate of descent of a 100 mm substrate that is above and falling toward the support surface to a rate of descent no greater than one half of the rate at which the 100 mm substrate would descend under gravity alone.
In some embodiments, the support surface of the susceptor includes a plurality of grooves and protrusions, preferably forming a criss-cross grid pattern. The substrate rests upon the tops of the protrusions. During processing, the grooves permit sweep gas to flow under the substrate and upward around a peripheral edge of the substrate to prevent the deposition of reactant gases on the underside of the substrate.
In some embodiments, wherein the susceptor is designed to hold a substrate having a predetermined size, some of the gas passages are substantially vertically oriented and positioned so as to be just radially outward of a peripheral edge of a substrate of the predetermined size and that is centered on the susceptor. When gas is delivered upward through these outer gas passages, substantially vertical gas streams emerge above the susceptor. These gas streams advantageously counteract wafer slide during drop-off, processing, and liftoff.
In a preferred embodiment, the substrate holder further comprises a spider assembly configured to support and preferably rotate the susceptor. The spider assembly is hollow to permit the gas to flow upward through the spider assembly into the gas passages of the susceptor.
According to yet another aspect, the present invention provides a method of supporting a substrate, as follows. A substrate is released above a support surface of a susceptor, such that the substrate is permitted to descend toward the support surface by gravitational force. A cushioning flow of gas is provided, which imparts an upwardly directed force onto the substrate. The flow rate of the cushioning gas flow is sufficient to slow the rate of descent of the substrate to a rate no greater than one half of the rate at which the substrate would descend under gravity alone. The substrate is then permitted to come into contact with the support surface. In one embodiment, the cushioning flow of gas is provided upwardly through a plurality of gas passages provided in the susceptor.
The method may further comprise providing a "trickle" flow of gas through the plurality of gas passages after the substrate comes into contact with the support surface of the susceptor, to prevent the deposition of reactant gases onto the underside of the substrate during processing. The support surface preferably has a plurality of grooves extending radially outward beyond a peripheral edge of the substrate. The flow rate of the trickle gas flow is sufficient to cause the gas to flow under the substrate through the grooves and upward around the peripheral edge of the substrate without disrupting contact between the substrate and the support surface.
The method may further comprise lifting the substrate after it is in contact with the support surface of the susceptor. Accordingly, a "liftoff" flow of gas is provided through the plurality of gas passages. The liftoff gas flow can be sufficient to lift the substrate off of the support surface, or it can simply aid in lifting the substrate. The substrate is then removed from above the support surface.
The method may further comprise providing gas flow through outer gas passages of the susceptor, to counteract sideward sliding of the substrate. The outer gas passages are positioned just radially outward of a peripheral edge of the substrate when the substrate is centered upon the support surface of the susceptor. The outer gas passages are substantially vertical so that upward gas flow through the outer gas passages flows substantially vertically upward above the susceptor. Gas can be supplied to the outer gas passages during wafer drop-off, processing, and/or liftoff
In another aspect, the invention provides a method of loading a wafer onto a susceptor. According to the method, a wafer is released above a susceptor, the wafer having a peripheral edge. A plurality of substantially vertical upwardly directed gas jets are provided radially exterior of the peripheral edge of the wafer. The jets substantially inhibit sideward motion of the wafer as the wafer descends toward the susceptor.
For purposes of summarizing the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described herein above. Of course, it is to be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other objects or advantages as may be taught or suggested herein.
All of these embodiments are intended to be within the scope of the invention herein disclosed. These and other embodiments of the present invention will become readily apparent to those skilled in the art from the following detailed description of the preferred embodiments having reference to the attached figures, the invention not being limited to any particular preferred embodiment(s) disclosed.
As noted above, there are significant problems associated with the transfer of substrates onto and from conventional substrate holders. In dropping substrates onto the holders, substrate slide makes it difficult to accurately place the substrate in the center of the holder with good reproducibility. When the holder is heated, particularly when the holder is a heated susceptor in a cold-wall reactor, a substrate dropped onto the holder also tends to curl due to transitory temperature differentials within the substrate. Curl can cause "jump" and move the substrate from its desired position. Due to unpredictable placement of the substrate upon the susceptor, it is difficult to maintain a uniform substrate temperature, especially for processes within the kinetic regime.
Furthermore, curl can cause scratching of the wafer-handling end effector and dropping of the substrate, leading to particulate contamination. Also, in removing the wafer from the holder, the wafer tends to stick to the holder (known as "stick" or "stiction"). Sometimes, the wafer lifts the holder and drops it back onto the supporting structure, causing further particle generation. These particle problems can cause contamination of whole wafers or even batches of wafers, significantly reducing yield.
The chamber 20 comprises a quartz tube defined by an upper wall 24, a lower wall 26, an upstream flange 28, and a downstream flange 30. Although not shown in the figure, lateral edges of the reaction chamber 20 include relatively thick side rails between which a chamber divider plate 32 is attached.
An elongated tube 34 depends from a centrally located region of the lower wall 26. A drive shaft 36 extends through the tube 34 and into a lower region 38 of the chamber 20. The lower region 38 is defined between the central chamber divider plate 32 and the lower wall 26. The upper end of the drive shaft 36 is tapered to fit within a recess of a multi-armed support or spider assembly 40 for rotating a segmented susceptor 42. The susceptor 42 supports a wafer 44. A motor (not shown) drives the shaft 36 to, in turn, rotate the gas cushion susceptor system 22 and wafer 44 thereon within the aperture 33. A gas injector 46 introduces process gas, as indicated by arrow 48, into an upper region 50 of the chamber 20. The upper region 50 is defined between the upper wall 24 and the chamber divider plate 32. The process gas passes over the top surface of the wafer 44 to deposit chemicals thereon. The system typically includes a plurality of radiant heat lamps arrayed around the outside of the reaction chamber 20 for heating the wafer 44 and catalyzing the chemical deposition thereon. An upper bank of elongated heat lamps 51 is illustrated outside of the upper wall 24, and typically a lower bank of lamps (not shown) arranged cross-wise to the upper bank is also utilized. Further, an array of spot lamps directed upward from underneath the susceptor 42 is often used.
A source of gas 37 is schematically shown connected through a mass flow controller 39 to the drive shaft 36. This gas source is preferably provided with the ability to control the temperature of the gas via heaters or the like which are not depicted in the figure. Gas flows into the space within the hollow shaft 36 and is eventually directed upward through the susceptor 42, as will be more fully described below. The fluid coupling allowing gas to the interior of the hollow, rotating shaft 36 is not shown, but may be accomplished by a number of different means, one of which is shown and described in U.S. Pat. No. 4,821,674, the entire disclosure of which is hereby incorporated herein by reference.
A wafer is introduced to the reaction chamber 20 through a wafer entry port 47. The wafer is typically transported by a robot pick-up arm (not shown) which enters through the port 47 and extends over the wafer support system 22 to deposit the wafer thereon. The CVD system then seals the reaction chamber 20 and introduces process gas for depositing a layer of silicon or other material on the wafer. After processing, a gate valve opens and the robot pick-up arm enters through the port 47 and retracts the wafer from the susceptor 42. Periodically, the reaction chamber 20 is preferably conditioned for subsequent processing. A typical sequence is the introduction of an etch gas into the reaction chamber with the gate valve closed to clean any particular deposition from the support structures and interior walls. After the etching, a silicon precursor is sometimes introduced into the chamber to provide a thin coat of silicon on the susceptor 42. Such a coating step is sometimes termed capping and serves to stabilize emissivity of the susceptor over repeated deposition cycles. After the etching and capping steps, the chamber is purged with hydrogen and heated for introduction of the next wafer.
The tube 34 is sized slightly larger than the drive shaft 36 to provide space therebetween through which purge gas 52 flows. The purge gas enters the lower region 38 of the reaction chamber 20 to help prevent reactant gas from depositing in the lower region. In this respect, the purge gas 52 creates a positive pressure below the wafer support system 22, which helps prevent reactant gas from traveling around the sides of the segment susceptor 42 in the lower region 38. The purge gas is then exhausted, as indicated with arrows 54 and 55, between the susceptor 42 and aperture 33 into the upper region 50 and then through an elongated slot 60 in the downstream flange 30. This ensures that reactant gases do not migrate into the lower region 38. The purge gas continues through an exhaust system 58. Excess reactant gas and reaction by-product likewise passes through the elongated slot 60 in the downstream flange 30 to be vented through the exhaust system 58.
Preferably, a temperature compensation ring 62 surrounds the wafer support system 22. The ring 62 fits in the opening 35 created by the aperture 33 in the divider plate 32, and the wafer support system 22 and ring 62 together substantially fill the opening and provide structure between the lower and upper chamber regions 38, 50. The susceptor 42 rotates within the ring 62 and is preferably spaced therefrom across a small annular gap of between 0.5 and 1.5 mm. In the case of a ring 62 having a circular outer periphery, the shape of the aperture 33 in the divider plate 32 surrounding the ring 62 can be made circular so that the edges of the opening 35 are in close proximity to the ring. Alternatively, the ring 62 may have a rounded rectangular outer periphery. As will be described in greater detail below, the susceptor 42 is preferably manufactured to have a constant outer diameter to fit within the ring 62. Although the susceptor 42 has a constant outer diameter, it will be seen that various configurations are provided for processing a number of different size wafers.
In a particularly advantageous embodiment, the temperature compensation ring 62 comprises a two-part circular ring having a cavity therein for receiving thermocouples 64, In the illustrated embodiment, the thermocouples 64 enter the chamber 20 through apertures formed in the downstream flange 30 and extend underneath the divider plate 32 into the temperature compensation ring 62. The apertures in the quartz flange 30 substantially prevent gas leakage around the thermocouples 64, although typically no additional seal is used. There are preferably three such thermocouples, one 66 terminating at a leading edge, one 68 terminating at a trailing edge, and one (not shown) terminating at either of the lateral sides of the ring 62. The thermocouples within the ring 62 surrounding the segmented susceptor 42 provide good temperature information feedback for accurate control of the radiant heating lamps. A plurality of bent fingers 70 attached to the divider plate 32 support the ring 62 around the periphery of the susceptor 42. In addition to the temperature compensation ring 62 and thermocouples therein, a central thermocouple 72 extends upward through the drive shaft 36, which is constructed hollow, and through the spider assembly 40 to terminate underneath the center of the susceptor 42. The central thermocouple 72 thus provides an accurate gauge of the temperature near the center of the wafer 44.
In addition to housing the thermocouples 64, the temperature compensation ring 62 absorbs radiant heat during high temperature processing. This compensates for a tendency toward greater heat loss at the wafer edge, a phenomenon that is known to occur due to a greater concentration of surface area for a given volume near such edges. By minimizing edge losses and the attending radial temperature non-uniformities across the wafer, the temperature compensation ring 62 can help to prevent crystallographic slip and other problems associated with temperature non-uniformities across the wafer. The temperature compensation ring 62 can be suspended by any suitable means. For example, the illustrated temperature compensation ring 62 rests upon elbows 70, which depend from the quartz chamber dividers 32.
Now, referring to
The upper section 78 generally comprises an outer ring 82 surrounding a thinner circular middle portion 83. The outer ring 82 comprises an upper rim or ledge 84 and a lower rim or skirt 86, which terminate at upper and lower shoulders or steps 88 and 90, respectively. The upper step 88 forms a transition between the ledge 84 and the circular middle portion 83. Together, the step 88 and the middle portion 83 define a circular wafer-receiving recess 92. The lower step 90 forms a transition between the skirt 86 and the middle portion 83. Together the step 90 and the middle portion 83 define an annular recess 94 in the underside of the upper section 78. The annular recess 94 is sized to receive the lower section 80. The lower section includes spider arm-receiving recesses 214 for receiving the upper ends of the spider arms 74, permitting the spider assembly to provide stable support to the susceptor 42.
An exemplary design for a two-piece susceptor allowing for gas flow through the susceptor and underneath the wafer to prevent deposition on the lower surface of the wafer is illustrated and described in U.S. Pat. No. 6,053,982, the entire disclosure of which is incorporated herein by reference.
In a preferred embodiment of the invention, a cushion gas flows upward at a constant or variable flow rate from a gas source below the wafer support system 22 through the spider assembly 40 and through the susceptor 42 to the underside of the wafer. While a constant flow rate of cushion gas may be preferred, the flow rate may be varied as the wafer descends onto the susceptor. The cushion gas may be provided during wafer drop-off, wafer processing, or wafer lift-off. The cushion gas may be the same as the purge gas 52 described above. Alternatively, the cushion gas may be different from the purge gas. In one embodiment, the cushion gas comprises a mixture of N2 and H2 gases.
In the embodiment illustrated in
The upper section 78 further includes a plurality of gas passage passages 96. In the figure, a limited number of such passages are depicted. However, in practice a much greater number of passages 96 will generally be used, which passages will be much smaller than those shown. For the sake of clarity, the various features have been shown in exaggerated form in the drawing. For a susceptor 42 adapted to support a 200 mm diameter wafer, there are preferably at least twenty passages 96, more preferably about sixty four passages 96, and even more preferably about 80 passages 96. With a larger wafer there are preferably even more passages. Preferably, the passages 96 are distributed substantially uniformly throughout the top surface of the upper section 78 of the susceptor 42 which contacts the wafer. Such a distribution minimizes the risk of uneven cooling of the wafer from gas flowing upward through the passages 96, which could induce slip. The passage diameter is preferably no greater than about 2 mm, and preferably is about 0.25 mm. In some embodiments, the gas flowing upward through the passages 96 may be heated to reduce the cooling effect on the wafer. Preferably, the passages 96 span substantially the entire upper surface of the wafer-receiving recess 92 of the susceptor, to reduce the likelihood of localized over-cooling of the wafer.
In the illustrated embodiment, the passages 96 are oriented diagonally so that the cushion gas flows upward and radially outward from the top surface of the susceptor toward the underside of the wafer, as depicted by the arrows 113. Such an orientation of the passages 96 facilitates the prevention of "backside deposition" during wafer processing. A small upward "trickle" gas flow through the passages 96 flows radially outward between the susceptor and the wafer and upward around the peripheral edges of the wafer to prevent reactant gases from depositing on the underside or "backside" of the wafer during wafer processing. Preferably, the passages 96 are oriented at an angle of at least 10� from vertical, and more preferably at least 45� from vertical. The outer passages 97 are preferably substantially vertical (preferably within 25� from vertical) so that gas expelled therefrom flows substantially vertically upward, as depicted by arrows 107. As explained in greater detail below, the outer passages 97 serve to inhibit and preferably prevent wafer slide.
The positioning and number of the passages 96 within the wafer-receiving recess 92 should be such as to effect a gas-cushioned descent of the substrate during wafer load, and to facilitate liftoff of the wafer during its removal via upward gas flow through the passages 96.
Preferably, the gas passages 96 of the upper section 78 of the susceptor 42 are positionally balanced with respect to the support surface of said susceptor. In other words, the locations of the various gas passages 96 are preferably distributed in a radially symmetric manner, such that an upward flow of gas through the passages causes substantially balanced upward force upon a substrate above the support surface of the susceptor. In contrast, if the passages 96 were concentrated toward one half of the support surface, the flow of gas could cause the substrate to tilt or even flip over.
The skilled artisan will understand that it may be desirable to provide a degree of "baffling" of the gas flow before it exits the gas passages 96 and, if provided, 97. In other words, it may be desirable to extend the path of gas flow within the susceptor, from the point at which the gas exits the spider arms 74 into the susceptor and the point at which the gas exits the passages into the region above the susceptor. This extension of the gas flow path improves the uniformity of gas flow through the passages 96 and 97, thus providing a more balanced force onto the descending substrate above the susceptor and preventing localized overcooling of the substrate. An exemplary design of a two-piece susceptor including a "baffling" of the gas flow within the susceptor is illustrated and described in U.S. Pat. No. 6,053,982, incorporated herein by reference.
In a preferred embodiment, as shown in
Details of the surface of the wafer holder of the preferred embodiment will now be shown with reference to
The difference in height between the protrusion top surfaces 228 and the grid groove bottom surfaces 224 is preferably between about 0.35 mm and 0.55 mm, and more preferably between about 0.40 mm and 0.45 mm (nominally 0.43 mm or 0.017 inches in the illustrated embodiment). The pitch of the grid, or distance between identical adjacent features, is preferably between about 1.0 mm and 1.5 mm, more preferably between about 1.2 mm and 1.3 mm in both directions (nominally 1.27 mm or 0.050 inches in the illustrated embodiment).
Similar gridded susceptors have been available from ASM America, Inc. of Phoenix, Ariz. for use in the Epsilon™ series of CVD reactors. Those susceptors, however, had different grid configurations. For instance, the pitch of the grid in prior susceptors was about half that of the preferred embodiment. The upper support surface of the susceptor of the preferred embodiment is designed to be nearly planar, with the exception of a minimal manufacturing tolerance for concavity (e.g., from 0 to 0.005 inches or 0.127 mm, for a susceptor designed to hold a 200 mm wafer), as compared to the peripheral portions of the grid, to avoid a convex shape. In other words, in as far as it is not possible to provide a perfectly flat wafer support surface, it is preferred that the surface be slightly concave with respect to the wafer rather than convex. A concave configuration promotes stability and balance, since the wafer will be supported at its periphery. In contrast, a convex susceptor will support the wafer only at the center, causing the wafer to be unstable and exacerbating thermal gradients on drop-off.
Those of ordinary skill in the art will appreciate that many of the advantages of the present invention can be obtained without the grid structure on the support surface of the susceptor 42. In other words, if desired, the susceptor can be modified so that it does not include the protrusions 220 and the grooves 222. Instead, the support surface can be substantially flat.
The present invention includes a method of providing gas-cushioned support of a semiconductor substrate, utilizing the apparatus described above. A substrate is first brought to a position above the susceptor 42 by an end effector. When the substrate is brought above the susceptor 42, gas is supplied from gas source 37, through hollow shaft 36 and spider assembly 40, and is supplied to gas passage holes 96. At this point, the flow rate of the supplied gas (termed the "cushion gas flow") is preferably sufficient to slow the descent of the substrate after release by the end effector to a rate (termed the "cushioned descent rate") significantly less than that at which the substrate would descend if it were simply dropped onto the susceptor 42 under substantially only the influence of gravity with no cushion gas flow (termed the "unimpeded descent rate"). The gas flow rate depends on the dimensions of the susceptor, loss of flow caused by contact between the susceptor support and susceptor, the size and weight of the substrate, the type of gas, and the amount of flow needed to cool the susceptor. Preferably, the cushioned descent rate is no greater than half the unimpeded descent rate, more preferably no greater than one-third the unimpeded descent rate, and most preferably no greater than one-quarter the unimpeded descent rate. The cushion gas flow rate may be changed during substrate descent. For example, the flow rate may be increased to decrease the cushioned descent rate as the substrate approaches the upper surface of the susceptor. The preheat time is the time lapse between the releasing of the substrate above the support surface of the susceptor and the moment the substrate contacts the support surface. Typically, the susceptor has a temperature within the range of 200-1000� C., and the substrate has a temperature within the range of 0-100� C. at the time of the releasing of the substrate above the susceptor.
In a system configured to modularly accept multiple wafer sizes, the gas supply system is preferably configured so that the flow rate of the gas is controllable and variable from zero to a flow rate sufficient to apply an upwardly directed force to a wafer to levitate the wafer above the support surface of the susceptor. For a 200 mm wafer, the gas supply system is preferably configured to provide a flow rate of H2 gas of at least 15-20 slm.
The cushion gas flow advantageously reduces namely wafer curl resulting from disparities in temperature in the wafer. When initially introduced into the chamber and held over the susceptor, a wafer is heated disproportionately from below. Accordingly, the higher temperature on the bottom surface of the wafer results in greater thermal expansion on the bottom surface and, therefore, a slight amount of upward curl. The wafer has a tendency to assume a bowl-like or concave shape, with a concavity on the order of about 0.010 inches. Concavity in this context refers to the depth from the highest point of the wafer (generally the edge) to the lowest point of the wafer (generally the center). If the concave wafer 44 is simply dropped onto a flat gridded susceptor without a cushion gas flow, the center of the wafer is the first portion thereof to contact the susceptor, which introduces radial temperature gradients. This quickly exacerbates the curl effect, such that the concavity increases to about 0.350 inch upon contact, often scratching the end effector before it can be withdrawn and sometimes resulting in breaking of the wafer.
The cushion gas flow can be advantageously used to counteract this effect. As noted above, the gas source 37 is provided with the ability to control the temperature of the gas supplied through the gas passage holes. The cushion gas flow slows the rate of descent of the substrate, allowing the susceptor and/or lamps to preheat the substrate prior to contacting the hot susceptor. In some susceptors according to the invention (such as that of
As shown in
After the substrate has descended to a point at which it is in contact with the susceptor over substantially the entire bottom surface of the substrate, the cushion gas flow is preferably reduced to a much lower flow rate. This gas flow rate is preferably insufficient to disturb contact between the projections 220 of the susceptor and the substrate. This "trickle" or "sweep" gas flow passes through the grooves 222 provided in the surface of the susceptor and below the bottom surface of the substrate, and exits at the edge of the substrate, passing upward into the processing chamber. This trickle gas flow advantageously serves to inhibit the flow of process gases from above the substrate to the area below the substrate, thus inhibiting undesired deposition of process gases onto the bottom surface of the substrate. For H2 gas, the trickle gas flow rate from the gas supply system is preferably within the range of 5-10 slm. Preferably, the ratio of the cushion gas flow rate to the trickle gas flow rate is within the range of 1.0 to 2.5.
After the processing of the semiconductor substrate is completed, the cushion gas flow can be increased to a level sufficient to aid lift of the substrate off of the susceptor. As noted above, substrates are prone to sticking on removal from conventional wafer supports because of the vacuum effect caused by an excessively slow flow of gas into the small space between the wafer and the surface of the pocket of the wafer holder. However, the cushion gas flow of the present invention eliminates this problem, as gas is supplied directly to the space below the substrate through the plurality of gas passages 96. The cushion gas flow aids in lifting the wafer off of the susceptor and allows the end effector to more reliably lift the substrate. The reduction and preferable prevention of stick reduces contamination, by preventing particles from dropping off of the substrate onto the susceptor. It will be understood that it is not necessary to provide a gas flow during lift-off, as the grooves 222 in the susceptor support surface alone tend to reduce the likelihood of stick upon lift-off.
Thus, it is clear that the cushion gas flow can be provided during (1) wafer drop-off, (2) wafer processing, and (3) wafer lift-off. Those of ordinary skill in the art will understand that the cushion gas flow can be provided during only one or two of these three processes, in any combination. For example, the cushion gas flow can be provided only during wafer drop-off and lift-off. It is not necessary to provide a cushion gas flow during wafer processing. Alternatively, the cushion gas flow can be provided only during wafer drop-off. In yet another alternative, the cushion gas flow can be provided only during wafer liftoff, or during processing as well as liftoff. The skilled artisan will appreciate that other combinations are possible.
Furthermore, where substantially vertical gas jets are supplied from outer gas passages 97 as shown in
Depositions performed on a wafer supported by a gridded susceptor and employing the cushion gas support method in accordance with the preferred embodiments will result in improved reproducibility and low standard deviation in deposited layer thickness. Moreover, improved control over drop-off should also help avoid failure in processing.
Those of ordinary skill in the art will understand that the susceptors of the present invention can be modified to remove the gridded top surface. In other words, the pocket that receives the wafer can have a substantially flat surface without the protrusions 220 and grooves 222 (
While a two-piece susceptor is easier to construct, the susceptor could be implemented in a one-piece design. One method of manufacturing suitable gas passages within a one-piece susceptor is disclosed in U.S. Pat. No. 4,978,567, the entire disclosure of which is hereby incorporated herein by reference.
Although this invention has been disclosed in the context of certain preferred embodiments and examples, it will be understood by those skilled in the art that the present invention extends beyond the specifically disclosed embodiments to other alternative embodiments and/or uses of the invention and obvious modifications thereof. Thus, it is intended that the scope of the present invention herein disclosed should not be limited by the particular disclosed embodiments described above, but should be determined only by a fair reading of the claims that follow.
|Cited Patent
|Filing date
|Publication date
|Dec 2, 1968
|Dec 14, 1971
|Western Electric Co
|Method for heat treatment of workpieces
|Mar 29, 1971
|Dec 19, 1972
|Air slides
|Oct 9, 1973
|Jan 6, 1976
|Lasch Jr Cecil A
|Automatic wafer feeding and pre-alignment apparatus and method
|Sep 14, 1979
|Apr 14, 1981
|Eaton Corporation
|Method for conducting heat to or from an article being treated under vacuum
|May 25, 1982
|Jul 3, 1984
|Varian Associates, Inc.
|Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
|Mar 2, 1984
|Apr 2, 1985
|Varian Associates, Inc.
|Method for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
|Jan 29, 1982
|Apr 23, 1985
|Varian Associates, Inc.
|Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
|May 2, 1984
|Jul 9, 1985
|Varian Associates, Inc.
|Apparatus for controlling thermal transfer in a cyclic vacuum processing system
|May 2, 1984
|Aug 20, 1985
|Varian Associates, Inc.
|Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
|Jun 9, 1983
|Sep 17, 1985
|Varian Associates, Inc.
|Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer
|Nov 28, 1984
|Jan 21, 1986
|Hitachi, Ltd.
|Method and apparatus for controlling sample temperature
|Jun 10, 1985
|Feb 4, 1986
|Varian Associates, Inc.
|Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
|Aug 23, 1983
|Mar 11, 1986
|Edward Bok
|Method for floating transport of substrates
|Feb 17, 1984
|Aug 5, 1986
|Gca Corporation
|Wafer chuck
|Feb 3, 1984
|Nov 18, 1986
|Integrated Automation Limited
|Module for high vacuum processing
|Jul 31, 1985
|May 5, 1987
|Integrated Automation, Limited
|Method of double floating transport and processing of wafers within a confined passageway
|Oct 2, 1985
|May 19, 1987
|Hitachi, Ltd.
|Method and apparatus for microwave heat-treatment of a semiconductor water
|Dec 3, 1985
|Dec 1, 1987
|Varian Associates, Inc.
|Chemical vapor deposition apparatus
|Apr 17, 1986
|Feb 16, 1988
|Varian Associates, Inc.
|Wafer processing chuck using slanted clamping pins
|Sep 27, 1984
|Apr 19, 1988
|Fujitsu Limited
|Plasma processor and method for IC fabrication
|Oct 1, 1986
|Dec 13, 1988
|Tokyo Denshi Kagaku Co., Ltd.
|Thin-film coating apparatus
|Feb 16, 1988
|Oct 17, 1989
|Hitachi, Ltd.
|Apparatus for holding and/or conveying articles by fluid
|May 18, 1988
|Aug 21, 1990
|Veeco Instruments, Inc.
|Substrate transport and cooling apparatus and method for same
|Jun 27, 1989
|Sep 18, 1990
|Tokyo Electron Limited
|Method and apparatus for heat-treating a substrate
|Nov 28, 1989
|Feb 5, 1991
|Cvd Incorporated
|Selective area chemical vapor deposition
|Feb 7, 1990
|Jul 23, 1991
|Anelva Corporation
|Low pressure vapor phase growth apparatus
|May 7, 1990
|Jul 23, 1991
|Balzers Aktiengesellschaft
|Workpiece carrier for a disk-shaped workpiece as well as a vacuum process space
|Sep 4, 1990
|Feb 25, 1992
|Balzers Aktiengesellschaft
|Workpiece support for vacuum chamber
|Jun 12, 1990
|Mar 17, 1992
|Micron Technology, Inc.
|Method and apparatus useful in the plasma etching of semiconductor materials
|May 3, 1990
|Apr 28, 1992
|Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh
|Device for transporting and positioning semiconductor wafer-type workpieces
|Jul 16, 1990
|Jul 28, 1992
|National Semiconductor Corp.
|Gas-based backside protection during substrate processing
|Dec 20, 1990
|Oct 13, 1992
|Cree Research, Inc.
|Method for silicon carbide chemical vapor deposition using levitated wafer system
|May 2, 1991
|Jan 19, 1993
|Balzers Aktiengesellschaft
|Workpiece carrier with suction slot for a disk-shaped workpiece
|May 15, 1991
|Apr 6, 1993
|Applied Materials, Inc.
|Method and apparatus for cooling wafers
|Sep 17, 1991
|Jun 1, 1993
|Applied Materials, Inc.
|Magnetic field-enhanced plasma etch reactor
|Jul 16, 1990
|Jul 27, 1993
|Novellus Systems, Inc.
|Gas-based backside protection during substrate processing
|Mar 25, 1991
|Aug 24, 1993
|Novellus Systems, Inc.
|Gas-based substrate protection during processing
|Nov 7, 1991
|Sep 28, 1993
|Applied Materials, Inc.
|Apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment
|May 28, 1992
|Dec 7, 1993
|Tokyo Electron Limited
|Substrate processing apparatus
|Nov 27, 1991
|Mar 1, 1994
|Tokyo Electron Limited
|Plasma etching apparatus
|Dec 16, 1991
|Mar 8, 1994
|Applied Materials, Inc.
|Multichamber integrated process system
|May 3, 1993
|Mar 29, 1994
|Applied Materials, Inc.
|Plasma etching system
|Feb 14, 1991
|Jun 7, 1994
|Epsilon Technology, Inc.
|Substrate supporting apparatus
|Jul 2, 1991
|Jun 14, 1994
|Hitachi, Ltd.
|Wafer cooling method and apparatus
|Nov 12, 1992
|Jul 26, 1994
|Tokyo Electron Kabushiki Kaisha
|Surface processing apparatus
|Oct 6, 1992
|Aug 30, 1994
|Hardy Walter N
|Differentially pumped temperature controller for low pressure thin film fabrication process
|Dec 2, 1992
|Sep 27, 1994
|Applied Materials, Inc.
|Electrostatic chuck for high power plasma processing
|Jan 28, 1993
|Oct 4, 1994
|White John M
|Alignment of a shadow frame and large flat substrates on a support
|Feb 7, 1994
|Oct 11, 1994
|Hyundai Electronics Industries Co., Ltd.
|Electron cyclotron resonance apparatus comprising wafer cooling pedestal
|Jun 15, 1992
|Oct 18, 1994
|Materials Research Corporation
|Semiconductor wafer processing method and apparatus with heat and gas flow control
|Jun 15, 1992
|Dec 6, 1994
|Materials Research Corporation
|Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
|Dec 17, 1993
|Jan 17, 1995
|Tokyo Electron Limited
|Stage having electrostatic chuck and plasma processing apparatus using same
|Mar 11, 1992
|Jan 24, 1995
|Genus, Inc.
|Differential pressure CVD chuck
|Sep 22, 1992
|Feb 7, 1995
|Genus, Inc.
|Film uniformity by selective pressure gradient control
|May 12, 1994
|Aug 29, 1995
|Mitsubishi Denki Kabushiki Kaisha
|Apparatus for manufacturing semiconductor and method of manufacturing semiconductor
|May 17, 1993
|Aug 29, 1995
|Texas Instruments
|Lamp-heated chuck for uniform wafer processing
|Nov 18, 1993
|Oct 17, 1995
|Hitachi, Ltd.
|Method of and apparatus for securing and cooling/heating a wafer
|Feb 18, 1994
|Nov 14, 1995
|Applied Materials, Inc.
|Method and apparatus for improving semiconductor wafer surface temperature uniformity
|Feb 8, 1994
|Feb 20, 1996
|Sumnitsch; Franz
|Support for disk-shaped articles using the Bernoulli principle
|Nov 21, 1994
|May 14, 1996
|Applied Materials, Inc.
|Chemical vapor deposition chamber with a purge guide
|Feb 21, 1995
|Jun 4, 1996
|Applied Materials, Inc.
|Electrostatic chuck having a grooved surface
|Sep 21, 1995
|Jun 18, 1996
|Kabushiki Kaisha Toshiba
|Vapor-phase deposition apparatus and vapor-phase deposition method
|May 18, 1994
|Jul 2, 1996
|Applied Materials, Inc.
|Patterned susceptor to reduce electrostatic force in a CVD chamber
|Sep 7, 1993
|Jul 9, 1996
|Mitsubishi Denki Kabushiki Kaisha
|Semiconductor producing apparatus comprising wafer vacuum chucking device
|Nov 19, 1993
|Oct 22, 1996
|Tokyo Electron Limited
|Method of controlling temperature of susceptor
|Aug 23, 1994
|Apr 15, 1997
|Novellus Systems, Inc.
|Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
|May 12, 1997
|Jan 5, 1999
|Applied Materials, Inc.
|Backside gas quick dump apparatus for a semiconductor wafer processing system
|Aug 10, 1995
|May 11, 1999
|Deboer; Wiebe B.
|Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
|Apr 10, 1998
|Mar 7, 2000
|Applied Materials, Inc.
|Method for igniting a plasma in a plasma processing chamber
|Jun 2, 1998
|May 16, 2000
|Asm Japan K.K.
|Susceptor for plasma CVD equipment and process for producing the same
|Jul 6, 1998
|Jun 13, 2000
|Asm America, Inc.
|Substrate cooling system and method
|Aug 15, 1997
|Jul 18, 2000
|Micro C Technologies, Inc.
|Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
|Jul 21, 1998
|Aug 1, 2000
|Applied Materials, Inc.
|Method and apparatus for reducing contamination of a substrate in a substrate processing system
|Feb 21, 1997
|Aug 29, 2000
|Tokyo Electron Limited
|Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures
|Sep 4, 1997
|Sep 5, 2000
|Asm America, Inc.
|Wafer support system
|Aug 13, 1992
|Jan 2, 2001
|Applied Materials, Inc.
|Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
|Apr 19, 1999
|Jan 30, 2001
|Applied Materials, Inc.
|Backside gas delivery system for a semiconductor wafer processing system
|Jan 8, 1999
|Feb 6, 2001
|Asm International N.V
|Method and apparatus for supporting a semiconductor wafer during processing
|May 17, 1999
|Feb 20, 2001
|Taiwan Semiconductor Manufacturing Company
|Recipe design to prevent tungsten (W) coating on wafer backside for those wafers with poly Si on wafer backside
|Jan 11, 2000
|Mar 20, 2001
|Asm America, Inc.
|Wafer support system
|May 20, 1999
|Jul 3, 2001
|Matsushita Electric Industrial Co., Ltd.
|Substrate temperature control method and device
|Mar 16, 2000
|May 28, 2002
|Hitachi, Ltd.
|Substrate temperature control system and method for controlling temperature of substrate
|May 3, 2000
|Oct 15, 2002
|Applied Materials, Inc.
|Substrate support member for a processing chamber
|Sep 4, 2002
|Jan 24, 2006
|Sumitomo Mitsubishi Silicon Corporation
|Susceptor for vapor-phase growth apparatus
|Mar 19, 1991
|Sep 25, 1991
|Kabushiki Kaisha Toshiba
|Vapor-phase deposition apparatus and vapor-phase deposition method
|Jan 19, 1993
|Aug 4, 1993
|Applied Materials, Inc.
|Passive shield for CVD wafer processing which prevents frontside edge and backside deposition
|Nov 11, 1994
|Jun 14, 1995
|Semiconductor Systems, Inc.
|Method and apparatus for baking and cooling semiconductor wafers and the like
|Oct 31, 1996
|Jun 25, 1997
|Applied Materials, Inc.
|Apparatus and method for cooling a substrate
|Dec 22, 1997
|Jul 15, 1998
|Applied Materials, Inc.
|Apparatus for controlling backside gas pressure beneath a semiconductor wafer
|Title not available
|Title not available
|Title not available
|Title not available
|Title not available
|Title not available
|Title not available
|Title not available
|Title not available
|Title not available
|Citing Patent
|Filing date
|Publication date
|Feb 21, 2006
|Jan 17, 2012
|Lam Research Corporation
|Process tuning gas injection from the substrate edge
|Mar 12, 2010
|Jan 8, 2013
|United Technologies Corporation
|High pressure pre-oxidation for deposition of thermal barrier coating with hood
|Apr 21, 2011
|Feb 17, 2015
|Hitachi High-Technologies Corporation
|Plasma processing apparatus and plasma processing method
|Feb 7, 2011
|Oct 13, 2015
|Suss Microtec Lithography Gmbh
|Thin wafer carrier
|Feb 26, 2010
|Nov 10, 2015
|Fujifilm Corporation
|Physical vapor deposition with heat diffuser
|Mar 14, 2013
|Mar 1, 2016
|Veeco Instruments Inc.
|Wafer carrier with temperature distribution control
|Feb 21, 2006
|Aug 23, 2007
|Lam Research Corporation
|Process tuning gas injection from the substrate edge
|Feb 20, 2007
|Jul 31, 2008
|Takumi Tandou
|Plasma processing apparatus and plasma processing method
|Feb 7, 2011
|Aug 18, 2011
|Suss Microtec Inc
|Thin wafer carrier
|Feb 26, 2010
|Sep 1, 2011
|Youming Li
|Physical Vapor Deposition With Heat Diffuser
|Mar 12, 2010
|Sep 15, 2011
|United Technologies Corporation
|High pressure pre-oxidation for deposition of thermal barrier coating with hood
|Mar 12, 2010
|Sep 15, 2011
|United Technologies Corporation
|High pressure pre-oxidation for deposition of thermal barrier coating
|U.S. Classification
|118/725, 156/345.51, 118/724, 156/345.52, 156/345.54, 118/728
|International Classification
|Cooperative Classification
|European Classification
|Dec 14, 2010
|Certificate of correction
|Mar 6, 2013
|Fee payment
Year of fee payment: 4
|Mar 30, 2017
|Fee payment
Year of fee payment: 8


text:
If the joy of a fair isn't enough to put a spring in your step, organisers have sweetened the deal with a 12 at 12 auction, featuring some intriguing listings.
From 12pm on Sunday August 13, a total of 12 auction lots will go under the hammer at Havelock North's Spring Fair.
Packages such as a getaway to Shepherds Retreat Bach in Taupo, accommodation and cooked breakfast at Napier's County Hotel or coaching session with legendary cricketer Mark Greatbatch, are all up for grabs.
One of the most sought after prizes is a three-course lunch for two at The Farm, Cape Kidnappers, where the lucky winners will be chauffeur driven to and from the venue in a Maserati Quattroporte, owned by Havelock North High School parent Lindsay Knowles.
"We're overwhelmed by the fantastic support of the local community in donating many of these auction items," organiser, Fiona Knobloch said.
"There's something for everyone no matter what your budget or tastes, including the opportunity to have lunch with Mayor Yule or a prostate exam with Dr Peter Culham ..."
Auctioneer Todd Foster of Maidens and Foster, donated his time, along with more than 100 volunteers to make the Spring Fair a success.
"We have ex-Havelock North High School head boy Harry Summerfield as MC, we could not have done this without all the people who have come forward to help out," convener Chris Sanders said.
The auction will take place on a stage behind Havelock North High School - with raffles, spot prizes and silent auctions drawn at the same time. Items must be paid for on the day using cash or Eftpos, available on site. "Havelock North High School and Havelock Intermediate form the backbone of our community and we really hope people come along and support the fair and dig deep for the auction," Mrs Knobloch added. While 100 per cent of proceeds from the fair and auction would be split between the schools, the day was open to everyone, with a parade and bike rally aimed at drawing people from the wider community. There will also be entertainment from local soloists, jazz bands and choirs.
A full auction catalogue will available on the school website: hnhs.school.nz


text:
The modern engineering establishments of today are fully
equipped. These are involved in a variety of engineering tasks that
require the finest accuracies in the production of components with
micronic tolerance. Some of these precision engineering companies cater
to the needs of different kinds of sectors. These industries can be as
varied as defense and automotive or food & beverage and textiles.
Since precision products are the forte for these companies, they are
not only ISO qualified but they also possess the latest machines. These
are in the range of CNC milling and turning besides multi-tasking
machines as well as EDM machines. Such companies also possess laser
equipment for the alignment of extrusion barrels, facilities for
metallurgical analysis, metrology and the repair of gearboxes. The range
of extrusion parts produced by these companies includes aspirators and
ceramic guides, idler rolls and interlacing jets, besides texturing jets
and thread up tools.
The precision parts manufactured for extrusion machines include Barmag parts and Filteco parts,
parts for Fare and Mackie parts, Reiter parts, Sahm parts as well as
Neumag parts. Besides these the high technology companies produce parts
for air entanglement such as Gilbos parts, Belmont parts and Neumag air
entanglement parts. For heat set and twisting applications, parts are
manufactured for GVA, Superba, Sussen and Volkman.
Quality Filteco parts produced include parts for Filteco 2000 Winder,
3000 Series Winder, parts for Filteco guides, Filteco pulleys/Idler
Rolls, Filteco pump and extruder as well as parts for Filteco
texturizer. There are parts for Filteco 2000 Winder, the winder kit and
the winder assemblies. The Filteco parts for the 2000 Winder include
parts such as the left and right hand protection flanges, hex piece of
different specifications, tooth pulley and Doffin Wheel Cover. The parts
for Filteco 2000 Winder kit consist of the tooth motor pulley,
regulator block, support block and transfer block. Similarly, the parts
for Filteco 2000 assemblies include transfer cylinder, texturizer
assembly, transfer belt assembly, synthetic fiber pump, spin pack and
roll and cam support assembly.
There are a large number of Neumag parts
that are produced by precision parts manufacturing companies. These
include parts for Neumag guides, Neumag pulley/idler roll, the pump and
extruder as well as texturizer and winders. Some of the Neumag parts for
guides include parts such as thread guide bar of different
specifications and stick guide assembly, guide, guide holder, tension
device and pigtail guide among many others.
About Author:
For further information on FARE parts and Filteco parts please visit http://www.ppiparts.com/
Order The Best Filteco Parts And Neumag Parts Online
by anonymous


text:
Mobile App
NILERD Delhi
National Institute of Labour Economics Research ...
Total Students
Fees Range
How to reach
National Institute of Labour Economics Research and Development is situated at A-7, Narela Institutional Area, Delhi, India in Delhi.
Courses Offered
- 2 Years
- Post Graduate Diploma in Management-P.G.D.M.
- Management - BBA / MBA / Diploma
- 2 Years
- Master In Human Resources Development Management-M.H.R.D.M.
- Management - BBA / MBA / Diploma
- 1 Years
- Diploma
- Management - BBA / MBA / Diploma
National Institute of Labour Economics Research and Development - NILERD Delhi - NILERD
NILERD is an autonomous institution under the Planning Commission, Government of India and is the only think-tank of the Planning Commission. The Planning Commission has two main functions: one, it prepares the five-year plans of India; and two, through plan funds, it also finances the programmes that implement the plans. NILERD works in close collaboration with the Planning Commission. NILERD was established in the Indian Institute of Public Administration (IIPA) Campus as an autonomous institute in 1962 and moved to a new campus in Narela in 2002 where it would celebrate its Golden Jubilee in 2011-12. The primary objectives of the Institute include research, data collection, and education and training in all aspects of human capital planning and human resource development. The Faculty of the Institute specialises in a variety of disciplines reflecting the team's multidisciplinary expertise. NILERD caters to a distiguished number of organizations, both nationl and interntional. NILERD has got years of experience and knowledge handling various research and education projects. Institute affiliated with Guru Gobind Singh Indraprastha University, Delhi . Institute of Applied Manpower Research proffers degree courses such as P. G. Diploma in Human Resource Planning & Development , Diploma in Monitoring & Evaluation The vision of Institute of Applied Manpower Research? is to be the leading centre of learning and innovation in emerging areas of business and management education. For every course the college imparts practical training to its students that helps them to understand better, improve their demonstrative skills, eliminate hesitation and in this process strives to mould them into industry ready professionals. Mission of NILERD is 'to foster critical analysis by training students both in theory and practice so as to equip them with skills needed for facing global challenges with team work and human values And to build quality network with the Industry, educationists and the society for exchanging knowledge. The diligent faculty team of the college possesses hands-on experience and up to date knowledge of their subject and area of expertise.
Why join Institute of Applied Manpower Research
Located in the pollution free outskirts of Delhi.
3 Type Courses Available
- 2 PG Courses
- 1 Diploma Courses
National Institute of Labour Economics Research and Development Placements
Visiting Companies
Student Placement
National Institute of Labour Economics Research and Development is located in the pollution free outskirts of Delhi. Iamr is connected to 8 lane National Highway, providing easy connectivity to all parts of Delhi. IAMR is spread in 15 acre campus, with facilities of international standards. Campus is surrounded by lush green plantations.
Try our extensive database of FAQs or submit your own question...
Latest Placement Record needed Ahsan Asked this 1 year, 10 months ago in Marketing - India
how is SITM college for mba in telecom management Anonymous User Asked this 1 year, 4 months ago - India
Career question Anonymous User Asked this 1 year ago - India


text: Diane has written many articles about various places to travel. She has written articles about things to do in Las Vegas, NV and things to do in New York, NY. The most frequent articles she has written about travel are about encouraging people to visit a Maui Bed and Breakfast inn. She helps them imagine how a Maui Bed and Breakfast inn will guarantee an unforgettable Hawaiian vacation.


text:
This rum & Coke lariat necklace features repurposed glass from the bottlenecks of a Sailor Jerry Rum and Coca-Cola bottle. This simple and unique necklace is the perfect addition to your jewelry collection.
With the unique nature of repurposed + handcrafted designs, the size, shape and color of each piece of recycled glass will vary just slightly, making each truly one-of-a-kind.
Features + Components
Each piece of jewelry is designed with simplicity, sustainability and social consciousness in mind. This line of eco-friendly jewelry is handcrafted in the USA from repurposed glass bottles collected from neighborhood bars, restaurants, hotels and community events.
$ 22.50 $ 26.25
Rescued ~ Reborn Handcrafted from a repurposed wine bottle, this round glass necklace is simple and classic. The amber colored glass is leather wrapped on... View full product details
$ 29.50 $ 34.50
Rescued ~ Reborn A stunning glass necklace repurposed from a Bombay Sapphire Gin bottle. This beautiful piece of glass is copper wire wrapped and hangs... View full product details
$ 19.50 $ 22.75
Rescued ~ Reborn A simple and classic necklace handcrafted from an actual Bombay Sapphire Gin bottle. Repurposed from the bottleneck of the 1.75 liter bottle,... View full product details


text:
Alison is currently writing her fourth season of FXX's critically acclaimed comedy "You're The Worst," created by Stephen Falk. Other TV credits include "Idiotsitter" (Comedy Central), "The Awesomes" (Hulu), "Betas" (Amazon Studios) and "Hey Girl" (MTV). Alison is an alum of the Upright Citizens Brigade Theatre New York.
Alison lives in Los Angeles but originally hails from Central Pennsylvania, in a town where federal prison inmates staged a haunted house for the public every year. She received her BFA in drama from Syracuse University.
Follow her on Twitter @bennettleigh.
CONTACT:Jonathan Levy, UTA310-776-8156