text:
|Publication number
|Publication type
|Application number
|Publication date
|Apr 27, 2004
|Filing date
|Mar 1, 2001
|Priority date
|Mar 1, 2001
|Fee status
|Also published as
|Publication number
|John T. Moore, Terry L. Gilton
|Original Assignee
|Micron Technology, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (70), Non-Patent Citations (197), Referenced by (35), Classifications (29), Legal Events (8)
|External Links: USPTO, USPTO Assignment, Espacenet
This invention relates to non-volatile resistance variable devices and methods of forming the same.
Semiconductor fabrication continues to strive to make individual electronic components smaller and smaller, resulting in ever denser integrated circuitry. One type of integrated circuitry comprises memory circuitry where information is stored in the form of binary data. The circuitry can be fabricated such that the data is volatile or non-volatile. Volatile storing memory devices result in loss of data when power is interrupted. Non-volatile memory circuitry retains the stored data even when power is interrupted.
This invention was principally motivated in making improvements to the design and operation of memory circuitry disclosed in the Kozicki et al. U.S. Pat. Nos. 5,761,115; 5,896,312; 5,914,893; and 6,084,796, which ultimately resulted from U.S. patent application Ser. No. 08/652,706, filed on May 30, 1996, disclosing what is referred to as a programmable metalization cell. Such a cell includes opposing electrodes having an insulating dielectric material received therebetween. Received within the dielectric material is a fast ion conductor material. The resistance of such material can be changed between highly insulative and highly conductive states. In its normal high resistive state, to perform a write operation, a voltage potential is applied to a certain one of the electrodes, with the other of the electrode being held at zero voltage or ground. The electrode having the voltage applied thereto functions as an anode, while the electrode held at zero or ground functions as a cathode. The nature of the fast ion conductor material is such that it undergoes a chemical and structural change at a certain applied voltage. Specifically, at some suitable threshold voltage, plating of metal from metal ions within the material begins to occur on the cathode and grows or progresses through the fast ion conductor toward the other anode electrode. With such voltage continued to be applied, the process continues until a single conductive dendrite or filament extends between the electrodes, effectively interconnecting the top and bottom electrodes to electrically short them together.
Once this occurs, dendrite growth stops, and is retained when the voltage potentials are removed. Such can effectively result in the resistance of the mass of fast ion conductor material between electrodes dropping by a factor of 1,000. Such material can be returned to its highly resistive state by reversing the voltage potential between the anode and cathode, whereby the filament disappears. Again, the highly resistive state is maintained once the reverse voltage potentials are removed. Accordingly, such a device can, for example, function as a programmable memory cell of memory circuitry.
The preferred resistance variable material received between the electrodes typically and preferably comprises a chalcogenide material having metal ions diffused therein. A specific example is germanium selenide with silver ions. The present method of providing the silver ions within the germanium selenide material is to initially deposit the germanium selenide glass without any silver being received therein. A thin layer of silver is thereafter deposited upon the glass, for example by physical vapor deposition or other technique. An exemplary thickness is 200 Angstroms or less. The layer of silver is irradiated, preferably with electromagnetic energy at a wavelength less than 500 nanometers. The thin nature of the deposited silver enables such energy to pass through the silver to the silver/glass interface effective to break a chalcogenide bond of the chalcogenide material, thereby effecting dissolution of silver into the germanium selenide glass. The applied energy and overlying silver result in the silver migrating into the glass layer such that a homogenous distribution of silver throughout the layer is ultimately achieved.
It can be challenging to etch and to chemical-mechanical polish metal ion containing chalcogenide materials. Accordingly it would be desirable to develop memory cell fabrication methods which avoid one or both of etching or polishing such materials. It would also be desirable to develop alternate methods from that just described which incorporate the metal ions into chalcogenide materials. While the invention was principally motivated in achieving objectives such as these, the invention is in no way so limited. The artisan will appreciate applicability of the invention in other aspects of processing involving chalcogenide materials, with the invention only being limited by the accompanying claims as literally worded and as appropriately interpreted in accordance with the doctrine of equivalents.
The invention includes non-volatile resistance variable devices and methods of forming the same. In one implementation, a method of metal doping a chalcogenide material includes forming a metal over a substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through the chalcogenide material to the metal effective to break a chalcogenide bond of the chalcogenide material at an interface of the metal and chalcogenide material and diffuse at least some of the metal outwardly into the chalcogenide material. In one implementation, a method of metal doping a chalcogenide material includes surrounding exposed outer surfaces of a projecting metal mass with chalcogenide material. Irradiating is conducted through the chalcogenide material to the projecting metal mass effective to break a chalcogenide bond of the chalcogenide material at an interface of the projecting metal mass outer surfaces and diffuse at least some of the projecting metal mass outwardly into the chalcogenide material. In certain aspects, the above implementations are incorporated in methods of forming non-volatile resistance variable devices.
In one implementation, a non-volatile resistance variable device in a highest resistance state for a given ambient temperature and pressure includes a resistance variable chalcogenide material having metal ions diffused therein. Opposing first and second electrodes are received operatively proximate the resistance variable chalcogenide material. At least one of the electrodes has a conductive projection extending into the resistance variable chalcogenide material.
Preferred embodiments of the invention are described below with reference to the following accompanying drawings.
FIG. 1 is a diagrammatic sectional view of a semiconductor wafer fragment in process in accordance with an aspect of the invention.
FIG. 2 is a view of the FIG. 1 wafer fragment at a processing step subsequent to that shown by FIG. 1.
FIG. 3 is a view of the FIG. 1 wafer fragment at a processing step subsequent to that shown by FIG. 2.
FIG. 4 is a view of the FIG. 1 wafer fragment at a processing step subsequent to that shown by FIG. 3.
FIG. 5 is a view of the FIG. 1 wafer fragment at an alternate processing step subsequent to that shown by FIG. 3.
FIG. 6 is a view of the FIG. 1 wafer fragment at a processing step subsequent to that shown by FIG. 4.
FIG. 7 is a view of the FIG. 1 wafer fragment at a processing step subsequent to that shown by FIG. 6.
FIG. 8 is a view of the FIG. 1 wafer fragment at a processing step subsequent to that shown by FIG. 7.
This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws "to promote the progress of science and useful arts" (Article 1, Section 8).
Referring to FIG. 1, a semiconductor wafer fragment 10 is shown in but one preferred embodiment of a method of forming a non-volatile resistance variable device. By way of example only, example such devices include programmable metalization cells and programmable optical elements of the patents referred to above, further by way of example only, including programmable capacitance elements, programmable resistance elements, programmable antifuses of integrated circuitry and programmable memory cells of memory circuitry. The above patents are herein incorporated by reference. The invention contemplates the fabrication techniques and structure of any existing non-volatile resistance variable device, as well as yet-to-be developed such devices. In the context of this document, the term "semiconductor substrate" or "semiconductive substrate" is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials). The term "substrate" refers to any supporting structure, including, but not limited to, the semiconductive substrates described above. Also in the context of this document, the term "layer" encompasses both the singular and the plural unless otherwise indicated. Further, it will be appreciated by the artisan that "resistance setable semiconductive material" and "!resistance variable device" includes materials and devices wherein a property or properties in addition to resistance is/are also varied. For example, and by way of example only, the material's capacitance and/or inductance might also be changed in addition to resistance.
Semiconductor wafer fragment 10 comprises a bulk monocrystalline semiconductive material 12, for example silicon, having an insulative dielectric layer 14, for example silicon dioxide, formed thereover. A conductive electrode material 16, also termed a first metal layer, is formed over and on dielectric layer 14. By way of example only, preferred materials include any of those described in the incorporated Kozicki et al. patents referred to above in conjunction with the preferred type of device being fabricated. Layer 16 might constitute a patterned electrode for the preferred non-volatile resistance variable device being fabricated. Alternately by way of example only, layer 16 might constitute a patterned line or extension of a field effect transistor gate, with a subsequently deposited layer principally serving essentially as the electrode. An example preferred material for layer 16 is elemental tungsten deposited to an exemplary thickness of from about 100 Angstroms to about 1000 Angstroms. In the illustrated example, layer 16 has been patterned, and another dielectric layer 17 has been deposited and planarized as shown.
A second metal layer 18 is formed (preferably by a blanket deposition) on first metal layer 16. An exemplary preferred material in conjunction with the non-volatile resistance variable device being fabricated is elemental silver. A preferred thickness for layer 18 is from about 175 Angstroms to about 300 Angstroms.
Referring to FIG. 2, second metal layer 18 is formed into a structure 20, and first metal layer 16 is outwardly exposed. Such is preferably conducted by subtractive patterning of metal layer 18, for example by photolithographic patterning and etch. In one implementation, structure 20 can be considered as comprising a metal mass projecting from underlying substrate material and having outer surfaces comprised of a top surface 22 and opposing side surfaces 24 which join with top surface 22 at respective angles. The preferred angles are preferably within about 15� of normal, with normal angles being shown in the figures.
Referring to FIG. 3, a chalcogenide material 26 is formed over the substrate on second metal structure 20 outer surfaces 22 and 24, and on exposed first metal layer 16. Such is preferably formed by blanket physical vapor deposition. A preferred deposition thickness for layer 26 is preferably less than three times the thickness of deposited layer 18, with an example being from about 525 Angstroms to about 900 Angstroms. More preferred is a thickness to provide layer 18 at 20% to 50% of layer 26 thickness. Exemplary preferred chalcogenide materials include those disclosed in the Kozicki et al. patents referred to above. Specific preferred examples include a chalcogenide material having metal ions diffused therein represented by the formula GexAy, where "A" is selected from the group consisting of Se, Te and S and mixtures thereof. The illustrated example provides but one possible example of surrounding the exposed outer surfaces of a projecting metal mass with chalcogenide material in accordance with but one aspect of the invention.
Referring to FIG. 4, irradiating is conducted through chalcogenide material 26 to patterned second metal 18 effective to break a chalcogenide bond of the chalcogenide material at an interface with the patterned second metal outer surfaces and the chalcogenide material, and to diffuse at least some of second metal 18 outwardly into the chalcogenide material. Metal doped material 27 is formed thereby. Therefore as shown in the preferred embodiment, only a portion of blanket deposited chalcogenide material layer 26 is doped with second metal 18. A preferred irradiating includes exposure to actinic radiation having a wavelength below 500 nanometers, with radiation exposure at between 404-408 nanometers being a more specific example. A specific example in a suitable UV radiation flood exposure tool is 4.5 mW/cm2, 15 minutes, 405 nm wavelength, at room ambient temperature and pressure.
In the depicted and preferred embodiment, the irradiating diffuses only some of the metal from layer 18 outwardly into chalcogenide material, leaving a remnant structure 20 a. Accordingly, the projecting metal mass 20 a has a shape after the irradiating which is maintained in comparison to original shape 20, but at a reduced size. FIG. 5 illustrates a lesser preferred alternate embodiment 10 a whereby the irradiating and/or layer dimensions might be modified such that the irradiating diffuses all of projecting metal mass 20 outwardly into the chalcogenide material.
The preferred exemplary tungsten material of layer 16 does not appreciably diffuse into layer 26. Referring to FIG. 6 and regardless, chalcogenide material 26 not doped with metal 18 is substantially selectively etched from metal doped portion 27 of the chalcogenide material. In the context of this document, "substantially selective" means a relative etch ratio of layer 26 relative to layer 27 or at least 3:1. In the illustrated and preferred embodiment, such etching is preferably conducted to remove all of chalcogenide material 26 which has not been doped with metal 18. The preferred etching comprises dry anisotropic etching, preferably dry plasma anisotropic etching. A principle preferred component of such etching gas comprises CF4. Additional preferred gases in the chemistry include C2F6 and C4F8. Top power is preferably maintained at 500 watts, with the lower wafer susceptor being allowed to float. Susceptor temperature is preferably maintained at about 25� C., and an exemplary reactor pressure is 50 mTorr. By way of example only, a specific example in a reactive ion etcher is CF4 at 50 sccm, Ar at 25 sccm, susceptor temperature at 25� C., pressure of 50 mTorr and top power at 500 Watts.
Referring to FIG. 7, an insulating layer 30 has been deposited and metal doped chalcogenide material 27 has been exposed. An example and preferred material for layer 30 is silicon nitride.
Referring to FIG. 8, an outer conductive electrode layer 32 has been deposited and patterned to form the outer electrode of the preferred non-volatile resistance variable device. Example materials include those disclosed in the above Kozicki et al. patents. In the illustrated and described preferred example, silver structure 20 a might be designed and fabricated to constitute the effective quantity of silver for programming the device with no silver being provided in electrode 32. Alternately by way of example only, layer 16 might also constitute elemental silver with no silver being provided in electrode 32. Further, by way of example only, electrode 32 might principally comprise elemental silver, or at least a lower silver portion in contact with the chalcogenide material 27.
The above-described preferred embodiment example was in conjunction with fabrication of a non-volatile resistance variable device. However, the invention also contemplates metal doping a chalcogenide material independent of the device being fabricated, and in the context of the accompanying claims as literally worded regarding methods of metal doping a chalcogenide material. Further, the preferred example is with respect to formation of a projecting metal from an underlying substrate having chalcogenide material received thereover. However, the invention is in no way so limited and also contemplates, by way of example only, diffusing metal from an entirely flat, or other, underlying surface into overlying chalcogenide material.
The invention also contemplates non-volatile resistance variable devices independent of the method of manufacture. In one implementation, such a device includes a projecting metal mass (for example mass 20 a) extending outwardly from a first metal layer laterally central into resistance variable chalcogenide material. In one aspect, the invention contemplates the device being in a highest resistance state for a given ambient temperature and pressure. For example, the FIG. 8 device as depicted is in such a highest state of resistance. Progressively lower states of resistance for a given ambient temperature and pressure will exist as a silver dendrite, in the preferred embodiment, progressively grows from an electrode to the point of contacting the opposing electrode. FIG. 8 depicts but one exemplary embodiment of such a non-volatile resistance variable device having such a laterally central located projecting mass relative to material 27.
The invention also contemplates a non-volatile resistance variable device in a highest resistance state for a given ambient temperature and pressure independent of a conductive projection which is so centrally located. Such comprises a resistance variable chalcogenide material having metal ions diffused therein. Opposing first and second electrodes are received operatively proximate the resistance variable chalcogenide material, with at least one of the electrodes comprising a conductive projection extending into the resistance variable chalcogenide material. Provision of such a structure is in no way shown or suggested in a highest resistance state for a given ambient temperature and pressure in any of the teachings and drawings of the above-described Kozicki et al. patents.
In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.
|Cited Patent
|Filing date
|Publication date
|Oct 20, 1966
|Nov 23, 1971
|Western Electric Co
|Nonreflecting photomasks and methods of making same
|Jun 1, 1971
|Jul 3, 1973
|Motorola Inc
|Amorphous silicon film as a uv filter
|Oct 17, 1979
|May 26, 1981
|Ionomet Company, Inc.
|Process of doping silver image in chalcogenide layer
|Oct 17, 1980
|Jan 26, 1982
|Drexler Technology Corporation
|Method for making a broadband reflective laser recording and data storage medium with absorptive underlayer
|Dec 3, 1979
|Feb 23, 1982
|Ionomet Company, Inc.
|Surface sensitized chalcogenide product and process for making and using the same
|Nov 1, 1979
|Mar 16, 1982
|Nippon Telegraph & Telephone Public Corporation
|Pattern-forming process
|Jun 22, 1981
|Sep 20, 1983
|Cornell Research Foundation, Inc.
|Ion beam exposure of (g-Gex -Se1-x) inorganic resists
|Oct 22, 1981
|Dec 6, 1983
|Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V.
|Ion conductor material
|Jul 6, 1981
|Feb 12, 1985
|Energy Conversion Devices, Inc.
|Programmable cell for use in programmable electronic arrays
|Jun 27, 1986
|Jun 9, 1987
|Wu Bao Gang
|Liquid crystalline-plastic material having submillisecond switch times and extended memory
|Apr 8, 1985
|Jan 3, 1989
|Energy Conversion Devices, Inc.
|Method of fabricating a programmable array
|May 8, 1987
|Jan 24, 1989
|Gaf Corporation
|Memory element for information storage and retrieval system and associated process
|Mar 10, 1987
|Jul 11, 1989
|Advanced Micro Devices, Inc.
|High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism
|Jul 19, 1991
|Jan 5, 1993
|Energy Conversion Devices, Inc.
|Thin-film structure for chalcogenide electrical switching devices and process therefor
|Feb 25, 1991
|Jun 15, 1993
|Ibm Corporation
|Bilayer metallization cap for photolithography
|Mar 18, 1992
|Aug 24, 1993
|Micron Technology, Inc.
|Method of forming a stacked capacitor with striated electrode
|Dec 21, 1990
|Dec 21, 1993
|California Institute Of Technology
|Reversible non-volatile switch based on a TCNQ charge transfer complex
|Jun 8, 1992
|May 24, 1994
|Arizona Board Of Regents
|High resolution, multi-layer resist for microlithography and method therefor
|Nov 21, 1991
|May 24, 1994
|Matsushita Electric Industrial Co., Ltd.
|Electrically reprogrammable nonvolatile memory device
|Sep 8, 1992
|Sep 27, 1994
|Intel Corporation
|Method for the anisotropic etching of metal films in the fabrication of interconnects
|May 4, 1990
|Nov 1, 1994
|British Telecommunications Public Limited Company
|Amorphous silicon memory
|Aug 18, 1994
|Mar 19, 1996
|Arizona Board Of Regents
|Personal electronic dosimeter
|Jul 28, 1993
|Apr 30, 1996
|Hitachi, Ltd.
|Method for forming a pattern and forming a thin film used in pattern formation
|Dec 20, 1994
|Apr 30, 1996
|U.S. Philips Corporation
|Switching element with memory provided with Schottky tunnelling barrier
|Nov 28, 1995
|Mar 10, 1998
|Nec Corporation
|Process of fabricating dynamic random access memory device having storage capacitor low in contact resistance and small in leakage current through tantalum oxide film
|Jun 7, 1995
|May 12, 1998
|Micron Technology, Inc.
|Polysilicon pillar diode for use in a non-volatile memory cell
|May 30, 1996
|Jun 2, 1998
|Axon Technologies Corporation
|Programmable metallization cell structure and method of making same
|Jul 22, 1996
|Aug 4, 1998
|Micron Technology, Inc.
|Method of making chalogenide memory device
|Feb 12, 1997
|Nov 24, 1998
|Micron Technology, Inc.
|Stack/trench diode for use with a muti-state material in a non-volatile memory cell
|Mar 14, 1997
|Dec 8, 1998
|The United States Of America As Represented By The Secretary Of The Navy
|Infrared transparent selenide glasses
|Jan 7, 1998
|Apr 20, 1999
|Axon Technologies Corporation
|Programmable metallization cell structure and method of making same
|Jan 7, 1998
|Jun 22, 1999
|Axon Technologies Corporation
|Programmable metallization cell structure and method of making same
|Dec 16, 1997
|Jul 6, 1999
|Micron Technology, Inc.
|Chalcogenide memory cell with a plurality of chalcogenide electrodes
|May 16, 1997
|Dec 7, 1999
|Aerial Imaging Corporation
|Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass
|Apr 14, 1999
|Jun 6, 2000
|Massachusetts Institute Of Technology
|Memory structures and methods of making same
|Feb 5, 1999
|Jun 20, 2000
|Micron Technology, Inc.
|Memory array having a multi-state element and method for forming such array or cellis thereof
|Jan 12, 1999
|Jul 4, 2000
|Axon Technologies Corporation
|Programmable metallization cell structure and method of making same
|Apr 28, 1997
|Sep 12, 2000
|Micron Technology, Inc.
|Method of making an integrated circuit electrode having a reduced contact area
|Jun 4, 1999
|Nov 7, 2000
|Taiwan Semiconductor Manufacturing Company
|Method for fabricating small-size two-step contacts for word-line strapping on dynamic random access memory (DRAM)
|Feb 8, 1999
|Jan 23, 2001
|Taiwan Semiconductor Manufacturing Company
|Two step barrier process
|Apr 30, 1997
|May 22, 2001
|Micron Technology, Inc.
|Memory cell incorporating a chalcogenide element and method of making same
|Jun 23, 1998
|Oct 2, 2001
|Vlsi Technology, Inc.
|Sacrificial multilayer anti-reflective coating for mos gate formation
|May 11, 1999
|Oct 9, 2001
|Micron Technology, Inc.
|Method for fabricating an array of ultra-small pores for chalcogenide memory cells
|Mar 12, 1998
|Nov 13, 2001
|Micron Technology, Inc.
|Method of making chalcogenide memory device
|Dec 1, 1998
|Dec 11, 2001
|Amkor Technology, Inc.
|Grid array assembly of circuit boards with singulation grooves
|Mar 2, 2001
|Feb 19, 2002
|Micron Technology, Inc.
|PCRAM cell manufacturing
|Aug 3, 1999
|Feb 26, 2002
|Micron Technology, Inc.
|Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry
|May 12, 2000
|Apr 23, 2002
|Micron Technology, Inc.
|Method of fabricating a memory device
|Aug 31, 1999
|May 14, 2002
|Arizona Board Of Regents
|Self-repairing interconnections for electrical circuits
|Oct 23, 2000
|May 21, 2002
|Micron Technology, Inc.
|Method for fabricating an array of ultra-small pores for chalcogenide memory cells
|Dec 4, 1998
|Jul 9, 2002
|Arizona Board Of Regents
|Programmable sub-surface aggregating metallization structure and method of making same
|Oct 22, 1999
|Jul 23, 2002
|Lsi Logic Corporation
|Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines
|Aug 31, 1999
|Oct 22, 2002
|Arizona Board Of Regents
|Programmable interconnection system for electrical circuits
|Apr 4, 2001
|Oct 29, 2002
|The University Of Houston System
|Electrically variable multi-state resistance computing
|Feb 11, 2000
|Nov 26, 2002
|Arizona Board Of Regents
|Programmable microelectronic devices and method of forming and programming same
|Aug 31, 1999
|Jan 3, 2002
|Michael N. Kozicki
|Self-repairing interconnections for electrical circuits
|Dec 13, 2001
|Sep 5, 2002
|Moore John T.
|PCRAM cell manufacturing
|Mar 7, 2001
|Sep 12, 2002
|Moore John T.
|Method to manufacture a buried electrode PCRAM cell
|May 7, 2002
|Nov 7, 2002
|Coatue Corporation
|Memory device with a self-assembled polymer film and method of making the same
|Sep 10, 2001
|Nov 14, 2002
|Kozicki Michael N.
|Microelectronic programmable device and methods of forming and programming the same
|May 21, 2002
|Dec 19, 2002
|Arizona Board Of Regents
|Programmable sub-surface aggregating metallization structure and method of making same
|Aug 23, 2002
|Jan 2, 2003
|Moore John T.
|Chalcogenide comprising device
|Aug 1, 2001
|Feb 6, 2003
|Moore John T.
|Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
|Oct 8, 2002
|Feb 20, 2003
|Kozicki Michael N.
|Programmable microelectronic devices and methods of forming and programming same
|Apr 8, 2002
|Feb 20, 2003
|Kozicki Michael N.
|Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same
|Feb 18, 2000
|Jul 24, 2003
|Margret Spiegel
|Mixing assembly and method for dispensing cold water containing co2
|May 28, 1997
|Dec 18, 1997
|Axon Technologies Corporation
|Programmable metallization cell and method of making
|Dec 4, 1998
|Jun 10, 1999
|Axon Technologies Corporation
|Programmable sub-surface aggregating metallization structure and method of making same
|Feb 11, 2000
|Aug 17, 2000
|Arizona Board Of Regents
|Programmable microelectronic devices and methods of forming and programming same
|Sep 10, 2001
|Mar 14, 2002
|Axon Technologies Corporation
|Microelectronic programmable device and methods of forming and programming the same
|Abdel-All, A.; Elshafie,A.; Elhawary, M.M., DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass, Vacuum 59 (2000) 845-853.
|Adler, D.; Henisch, H.K.; Mott, S.N., The mechanism of threshold switching in amorphous alloys, Rev. Mod. Phys. 50 (1978) 209-220.
|Adler, D.; Moss, S.C., Amorphous memories and bistable switches, J. Vac Sci. Technol. 9 (1972) 1182-1189.
|Afifi, M.A.; Labib, H.H.; El-Fazary, M.H.; Fadel, M., Electrical and thermal properties of chalcogenide glass system Se75Ge25-xSbx, Appl. Phys. A 55 (1992) 167-169.
|Afifi, M.A.; Labib, H.H.; Fouad, S.S.; El-Shazly, A.A., Electrical & thermal conductivity of the amorphous semiconductor GexSe1-x, Egypt, J. Phys. 17 (1986) 335-342.
|Alekperova, Sh.M.; Gadzhieva, G.S., Current-Voltage characteristics of Ag2Se single crystal near the phase transition, Inorganic Materials 23 (1987) 137-139.
|Aleksiejunas, A.; Cesnys, A., Switching phenomenon and memory effect in thin-film heterojunction of polycrystalline selenium-silver selenide, Phys. Stat. Sol. (a) 19 (1973) K169-K171.
|Angell, C.A., Mobile ions in amorphous solids, Annu. Rev. Phys. Chem. 43 (1992) 693-717.
|Aniya, M., Average electronegativity, medium-range-order, and ionic conductivity in superionic glasses, Solid state Ionics 136-137 (2000) 1085-1089.
|Asahara, Y.; Izumitani, T., Voltage controlled switching in Cu-As-Se compositions, J. Non-Cryst. Solids 11 (1972) 97-104.
|Asokan, S.;Prasad, M.V.N.; Parthasarathy, G.; Gopal, E.S.R., Mechanical and chemical thresholds in IV-VI chalcogenide glasses, Phys. Rev. Lett. 62 (1989) 808-810.
|Axon Technologies Corporation, Technology Description: Programmable Metallization Cell (PMC), (pre-Jul. 7, 2000) pp. 1-6.
|Baranovskii, S.D.; Cordes, H., On the conduction mechanism in ionic glasses, J. Chem. Phys. 111 (1999) 7546-7557.
|Belin, R.; Taillades, G.; Pradel, A.; Ribes, M., Ion dynamics in superionic chalcogenide glasses: complete conductivity spectra, Solid state Ionics 136-137 (2000) 1025-1029.
|Belin, R.; Zerouale, A.; Pradel, A.; Ribes, M., Ion dynamics in the argyrodite compound Ag7GeSe5I: non-Arrhenius behavior and complete conductivity spectra, Solid State Ionics 143 (2001) 445-455.
|Benmore, C.J. Salmon, P.S., Structure of fast ion conducting and semiconducting glassy chalcogenide alloys, Phys. Rev. Lett. 73 (1994) 264-267.
|Bernede, J.C., Influence du metal des electrodes sur les caracteristiques courant-tension de structures M-Ag2Se-M, Thin solid films 70 (1980) L1-L4.
|Bernede, J.C., Polarized memory switching in MIS thin films, Thin Solid Films 81 (1981) 155-160.
|Bernede, J.C., Switching and silver movements in Ag2Se thin films, Phys. Stat. Sol. (a) 57 (1980) K101-K104.
|Bernede, J.C.; Abachi, T., Differential negative resistance in metal/insulator/metal structures with an upper bilayer electrode, Thin solid films 131 (1985) L61-L64.
|Bernede, J.C.; Conan, A.; Fousenan't, E.; El Bouchairi, B.; Goureaux, G., Polarized memory switching effects in Ag2Se/Se/M thin film sandwiches, Thin solid films 97 (1982) 165-171.
|Bernede, J.C.; Khelil, A.; Kettaf, M.; Conan, A., Transition from S-to N-type differential negative resistance in AI-Ai2O3-Ag2-xSe1+x thing film structures, Phys. Stat. Sol. (a) 74 (1982) 217-224.
|Bondarev. V.N.; Pikhitsa, P.V., A dendrite model of current instability in RbAg4I5, Solid State Ionics 70/71 (1994) 72-76.
|Boolchand, P., Bresser, W.J., Compositional trends in glass transition temperature (Tg), network connectivity and nanoscale chemical phase separation in chalcogenides, Dept. of ECECS, Univ. Cincinnati (Oct. 28, 1999) 45221-0030.
|Boolchand, P., The maximum in glass transition temperature (Tg) near x=1/3 in GexSe1-x Glasses, Asian Journal of Physic (2000) 9, 709-72.
|Boolchand, P.; Bresser, W.J., Mobile silver ions and glass formation in solid electrolytes, Nature 410 (2001) 1070-1073.
|Boolchand, P.; Enzweiler, R.N.; Tenhover, M., Structural ordering of evaporated amorphous chalcogenide alloy films: role of thermal annealing, Diffusion and Defect Data Vol. 53-54 (1987) 415-420.
|Boolchand, P.; Georgiev, D.G.; Goodman, B., Discovery of the Intermediate Phase in Chalcogenide Glasses, J. Optoelectronics and Advanced Materials, 3 (2001), 703.
|Boolchand, P.; Grothaus, J, Molecular Structure of Melt-Quenched GeSe2 and GeS2 glasses compared, Proc. Int. Conf. Phys. Semicond. (Eds. Chadi and Harrison) 17<th >(1985) 833-36.
|Boolchand, P.; Grothaus, J, Molecular Structure of Melt-Quenched GeSe2 and GeS2 glasses compared, Proc. Int. Conf. Phys. Semicond. (Eds. Chadi and Harrison) 17th (1985) 833-36.
|Boolchand, P.; Grothaus, J.; Bresser, W.J.; Suranyi, P., Structural origin of broken chemical order in a GeSe2 glass, Phys. Rev. B 25 (1982) 2975-2978.
|Boolchand, P.; Grothaus, J.; Phillips, J.C., Broken chemical order and phase separation in GexSe1-x glasses, Solid state comm. 45 (1983) 183-185.
|Boolchand, P.; Selvanathan, D.; Wang, Y.; Georgiev, D.G.; Bresser, W.J., Onset of rigidity in steps in chalcogenide glasses, Properties and Applications of Amorphous Materials, M.F. Thorpe and Tichy, L. (eds.) Kluwer Academic Publishers , the Netherlands, 2001, pp. 97-132.
|Bresser, W.; Boolchand, P.; Suranyi, P., Rigidity percolation and molecular clustering in network glasses, Phys. Rev. Lett. 56 (1986) 2493-2496.
|Bresser, W.J.; Boolchand, P.; Suranyi, P.; de Neufville, J.P, Intrinsicially broken chalcogen chemical order in stoichiometric glasses, Journal de Physique 42 (1981) C4-193-C4-196.
|Bresser, W.J.; Boolchand, P.; Suranyi, P.; Hernandez, J.G., Molecular phase separation and cluster size in GeSe2 glass, Hyperfine Interactions 27 (1986) 389-392.
|Cahen, D.; Gilet, J.-M.; Schmitz, C.; Chernyak, L.; Gartsman, K.; Jakubowicz, A., Room-Temperature, electric field induced creation of stable devices in CulnSe2 Crystals, Science 258 (1992) 271-274.
|Chatterjee, R.; Asokan, S.; Titus, S.S.K., Current-controlled negative-resistance behavior and memory switching in bulk As-Te-Se glasses, J. Phys. D: Appl. Phys. 27 (1994) 2624-2627.
|Chen, C.H.; Tai, K.L., Whisker growth induced by Ag photodoping in glassy GexSe1-x films, Appl. Phys. Lett. 37 (1980) 1075-1077.
|Chen, G.; Cheng, J., Role of nitrogen in the crystallization of silicon nitride-doped chalcogenide glasses, J. Am. Ceram. Soc. 82 (1999) 2934-2936.
|Chen, G.; Cheng, J.; Chen, W., Effect of Si3N4 on chemical durability of chalcogenide glass, J. Non-Cryst. Solids 220 (1997) 249-253.
|Cohen, M.H.; Neale, R.G.; Paskin, A., A model for an amorphous semiconductor memory device, J. Non-Cryst. Solids 8-10 (1972) 885-891.
|Croitoru, N.; Lazarescu, M.; Popescu, C.; Telnic, M.; and Vescan, L., Ohmic and non-ohmic conduction in some amorphous semiconductors, J. Non-Cryst. Solids 8-10 (1972) 781-786.
|D.B. Johnson, et. al., "Lateral Diffusion in Ag-Se Thin-Film Couples", Journal of Applied Physics, vol. 40, No. 1, Jan. 1996, pp. 149-152.
|Dalven, R.; Gill, R., Electrical properties of beta-Ag2Te and beta -Ag2Se from 4.2 to 300K, J. Appl. Phys. 38 (1967) 753-756.
|Das et al., Theory of the characteristic curves of the silver chalcogenide glass inorganic photoresists, 54 APPL. PHYS. LETT., No. 18, pp. 1745 -1747 (May 1999).
|Davis, E.A., Semiconductors without form, Search 1 (1970) 152-155.
|Dearnaley, G.; Stoneham, A.M.; Morgan, D.V., Electrical phenomena in amorphous oxide films, Rep. Prog. Phys. 33 (1970) 1129-1191.
|Dejus, R.J.; Susman, S.; Volin, K.J. Montague, D.G.; Price, D.L, Structure of Vitreous Ag-Ge-Se, J. Non-Cryst. Solids 143 (1992) 162-180.
|den Boer, W., Threshold switching in hydrogenated amorphous silicon, Appl. Phys. Lett. 40 (1982) 812-813.
|Derwent Abstracted Publication No. JP56126916A "Diffusin umpurities into gp=III-gp-IV elements seimconductor" Nippon Telegraph and telephone corp. Oct. 5, 1981.*
|Drusedau, T.P.; Panckow, A.N.; Klabunde, F., The hydrogenated amorphous silicon/nanodisperse metal (SIMAL) system-Films of unique electronic properties, J. Non-Cryst. Solids 198-200 (1996) 829-832.
|El Bouchairi, B.; Bernede, J.C.; Burgaud, P., Properties of Ag2-xSe1+x/n-Si diodes, Thin Solid Films 110 (1983) 107-113.
|El Gharras, Z.; Bourahla, A.; Vautier, C., Role of photoinducded defects in amorphous GexSe1-x photoconductivity, J. Non-Cryst. Solids 155 (1993) 171-179.
|El Ghrandi, R.; Calas, J.; Galibert, G., Ag dissolution kinetics in amorphous GeSe5.5 thin films from "in-situ" resistance measurements vs time Phys. Stat. Sol. (a) 123 (1991) 451-460.
|El Ghrandi, R.; Calas, J.; Galibert, G.; Averous, M., Silver photodissolution in amorphous chalcogenide thin films, Thin Solid Films 218 (1992)259-273.
|El-kady, Y.L, The threshold switching in semiconducting glass Ge21Se17Te62, Indian J. Phys. 70A (1996) 507-516.
|Elliot, S.R., A unified mechanism for metal photodissolution in amorphous chalcogenide materials, J. Non-Cryst. Solids 130 (1991) 85-97.
|Elliot, S.R., Photodissolution of metals in chalcogenide glasses: A unified mechanism, J. Non-Cryst. Solids 137-138 (1991) 1031-1034.
|Elsamanoudy, M.M.; Hegab, N.A.; Fadel, M., Conduction mechanism in the pre-switching state of thin films containing Te As Ge Si, Vacuum 46 (1995) 701-707.
|El-Zahed, H.; El-Korashy, A., Influence of composition on the electrical and optical properties of Ge20BixSe80-x films, Thin Solid Films 376 (2000) 236-240.
|Fadel, M., Switching phenomenon in evaporated Se-Ge-As thin films of amorphous chalcogenide glass, Vacuum 44 (1993) 851-855.
|Fadel, M.; El-Shair, H.T., Electrical, thermal and optical properties of Se75Ge7Sb18, Vacuum 43 (1992) 253-257.
|Feng, X. ;Bresser, W.J.; Boolchand, P., Direct evidence for stiffness threshold in Chalcogenide glasses, Phys. Rev. Lett. 78 (1997) 4422-4425.
|Feng, X.; Bresser, W.J.; Zhang, M.; Goodman, B.; Boolchand, P., Role of network connectivity on the elastic, plastic and thermal behavior of covalent glasses, J. Non-Cryst. Solids 222 (1997) 137-143.
|Fischer-Colbrie, A.; Bienenstock, A.; Fuoss, P.H.; Marcus, M.A., Structure and bonding in photodiffused amorphous Ag-GeSe2 thin films, Phys. Rev. B 38 (1988) 12388-12403.
|Fleury, G.; Hamou, A.; Viger, C.; Vautier, C., Conductivity and crystallization of amorphous selenium, Phys. Stat. Sol. (a) 64 (1981) 311-316.
|Fritzsche, H, Optical and electrical energy gaps in amorphous semiconductors, J. Non-Cryst. Solids 6 (1971) 49-71.
|Fritzsche, H., Electronic phenomena in amorphous semiconductors, Annual Review of Materials Science 2 (1972) 697-744.
|Gates, B.; Wu, Y.; Yin, Y.; Yang, P.; Xia, Y., Single-crystalline nanowires of Ag2Se can be synthesized by templating against nanowires of trigonal Se, J. Am. Chem. Soc. (2001) currently ASAP.
|Gosain, D.P.; Nakamura, M.; Shimizu, T.; Suzuki, M.; Okano, S., Nonvolatile memory based on reversible phase transition phenomena in telluride glasses, Jap. J. Appl. Phys. 28 (1989) 1013-1018.
|Guin, J.-P.; Rouxel, T.; Keryvin, V.; Sangleboeuf, J.-C.; Serre, I.; Lucas, J., Indentation creep of Ge-Se chalcogenide glasses below Tg: elastic recovery and non-Newtonian flow, J. Non-Cryst. Solids 298 (2002) 260-269.
|Guin, J.-P.; Rouxel, T.; Sangleboeuf, J.-C; Melscoet, I.; Lucas, J., Hardness, toughness, and scratchability of germanium-selenium chalcogenide glasses, J. Am. Ceram. Soc. 85 (2002) 1545-52.
|Gupta, Y.P., On electrical switching and memory effects in amorphous chalcogenides, J. Non-Cryst. Sol. 3 (1970) 148-154.
|Haberland, D.R.; Stiegler, H., New experiments on the charge-controlled switching effect in amphous semiconductors, J. Non-Cryst. Solids 8-10 (1972) 408-414.
|Haifz, M.M.; Ibrahim, M.M.; Dongol, M.; Hammad, F.H., Effect of composition on the structure and electrical properties of As-Se-Cu glasses, J. Apply. Phys. 54 (1983) 1950-1954.
|Hajto, J.; Hu, J.; Snell, A.J.; Turvey, K.; rose, M., DC and AC measurements on metal/a-Si:H/metal room temperature quantised resistance devices, J. Non-Cryst. Solids 266-269 (2000) 1058-1061.
|Hajto, J.; McAuley, B.; Snell, A.J.; Owen, A.E., Theory of room temperature quantized resistance effects in metal-a-Si:H-Metal thin film structures, J. Non-Cryst. Solids 198-200 (1996) 825-828.
|Hajto, J.; Owen, A.E.; Snell, A.J.; Le Comber, P.G.; Rose, M.J., Analogue memory and ballistic electron effects in metal-amorphous silicon structures, Phil. Mag. B 63 (1991) 349-369.
|Hajto, J.; Rose, M.J.; Osborne, I.S.; Snell, A.J.; Le Comber, P.G.; Owen, A.E., Quantization effects in metal/a-Si:H/metal devices, Int. J. Electronics 73 (1992) 911-913.
|Hayashi, T.; Ono, Y.; Fukaya, M.; Kan, H., Polarized memory switching in amorphous Se film, Japan. J. Appl. Phys. 13 (1974) 1163-1164.
|Hegab , N.A.; Fadel, M.; Sedek, K., Memory switching phenomena in thin films of chalcogenide semiconductors, Vacuum 45 (1994) 459-462.
|Helbert et al., Intralevel hybrid resist process with submicron capability, SPIE vol. 333 Submicron Litigraphy pp. 24-29 (1982).
|Helbert Intralevel hybrid resist process with submicron capability, SPIE vol. 333 Submicron Lithography, pp. 24-29 (1982),
|Hilt, Dissertation: Materials Characterization of Silver Chalcogenide Programmable Metallization Cells, Arizona State University, pp. title page -114 (UMI Company, May 1999).
|Hirose, et al., "High Speed Memory Behavior and Reliability of an Amorphous As2S3 Film Doped with Ag", Jul. 17, 1980, pp. K187-K190.
|Hirose, et al., "Polarity-dependent memory switching and behavior of Ag dendrite in Ag-photodoped amorphous As2S3 films". Journal of Applied Physics, vol. 47, No. 6, Jun. 1976, pp. 278-2772.
|Holmquist et al., Reaction and Diffusion in Silver-Arsenic Chalcogenide Glass Systems, 62 J. Amer. Ceramic Soc., Nos. 3-4, pp. 183-188 (Mar.-Apr. 1979).
|Hong, K.S.; Speyer, R.F., Switching behavior in II-IV-V2 amorphous semiconductor systems, J. Non-Cryst. Solids 116 (1990) 191-200.
|Hosokawa, S., Atomic and electronic structures of glassy GexSe1--x around the stiffness threshold composition, J. Optoelectronics and Advanced Materials (2001) 199-214.
|Hu, J.; Hajto, J.; Snell, A.J.; Owen, A.E.; Rose, M.J., Capacitance anomaly near the metal-non-metal transition in Cr-hydrogenated amorphous Si-V thin-film devices, Phil. Mag. B. 74 (1996) 37-50.
|Hu, J.; Snell, A.J.; Hajto, J.; Owen, A.E., Constant current forming in cr/p+a-/Si:H/V thin film devices, J. Non-Cryst. Solids 227-230 (1998) 1187-1191.
|Hu, J.; Snell, A.J.; Hajto, J.; Owen, A.E., Current-induced instability in Cr-p+a-Si:H-V thin film devices, phil. Mag. B 80 (2000) 29-43.
|Huggett et al., Development of silver sensitized germanium selenide photoresist by reactive sputter etching in SF6, 42 Appl. Phys. Lett., No. 7, pp. 592-594 (Apr. 1983).
|Iizima, S.; Sugi, M.; Kikuchi, M.; Tanaka, K., Electrical and thermal properties of semiconducting glasses As—Te—Ge, Solid State Comm. 8 (1970) 153-155.
|Ishikawa, R.; Kikuchi, M., Photovoltaic study on the photo-enganced diffusion of Ag in amorphous films of Ge2S3, J. Non-Cryst. Solids 35 & 36 (1980) 1061-1066.
|Iyetomi, H.; Vashista, P.; Kalia, R.K., Incipient phase separation in Ag/Ge/Se glasses: clustering of Ag atoms, J. Non-Cryst. Solids 262 (2000) 135-142.
|Jones, G.; Collins, r.A., Switching properties of thin selenium films under pulsed bias, Thin Solid Films 40 (1977) L15-L18.
|Joullie, A.M.; Marucchi, J., Electrical properties of the amorphous alloy As2Se5, Mat. Res. Bull. 8 (1973) 433-442.
|Joullie, A.M.; Marucchi, J., On the DC electrical conduction of amorphous As2Se7 before switching, Phys. Stat. Sol. (a) 13 (1972) K105-K109.
|Kaplan, t.; Adler, D., Electrothermal switching in amorphous semiconductors, J. Non-Cryst. Solids 8-10 (1972) 538-543.
|Kawaguchi, et al., "Optical, electrical, and structural properties of amorphous Ag-Ge-S and Ag-Ge-Se films and comparison of photoinduced and thermally induced phenomena of both systems". Journal of Applied Physics, 79, Jun. 1996, pps 9096-9104.
|Kawaguchi, t.; Masui, K., Analysis of change in optical Transmission spectra resulting from Ag photodoping in chalcogenide film, Japn. J. Appl. Phys. 26 (1987) 15-21.
|Kawasaki, M.; Kawamura, J.; Nakamura, Y.; Aniya, M., Ionic conductivity of Agx (GeSe3)1-x (0<=x<=0.571) glasses, Solid state Ionics 123 (1999) 259-269.
|Kluge, et. al., "Silver photodiffusion in amorphous Ge, Se100", Journal of Non-Crystalline Solids 124 (1990) pp. 186-193.
|Kolobov et al. Advances in Physics, 1991, vol. 40, No. 5, pp. 625-684"Photodoping of amorphous chalcogenides by metals".*
|Kolobov, A.V., Lateral diffusion of silver in vitreous chalcogenide films, J. Non-Cryst. Solids 137-138 (1991) 1027-1030.
|Kolobov, A.V., On the origin of p-type conductivity in amorphous chalcogenides, J. Non-Cryst. Solids 198-200 (1996) 728-731.
|Korkinova, Ts.N.; Andreichin, R.E., Chalcogenide glass polarization and the type of contacts, J. Non-Cryst. Solids 194 (1996) 256-259.
|Kotkata, M.F.; Afif, M.a.; Labib, H.H.; Hegab, N.A.; Abdel-Aziz, M.M., Memory switching in amorphous GeSeTl chalcogenide semiconductor films, Thin Solid Films 240 (1994) 143-146.
|Kozicki et al., Nanoscale phase separation in Ag-Ge Se glasses, Microelectronic Engineering, vol. 63/1-5, 155-159 (2002).
|Kozicki, et al., Nanoscale effects in devices based on chalcogenide solid solutions, Superlattices and Microstuctures, 27, 485-488 (2000).
|Kozicki, et. al., "Applications of Programmable Resistance Changes in Metal-doped Chalcogenides", Proceedings of the 1999 Symposium on Solid State Ionic Devices, Editors -E.D. Wachsman et al., The Electrochemical Society, Inc. 1 12 (1999).
|Lakshminarayan, K.N.; Srivastava, K.K.; Panwar, O.S.; Dumar, A., Amorphous semiconductor devices; memory and switching mechanism, J. instn Electronics & Telecom. Engrs 27 (1981) 16-19.
|Lal, M.; Goyal, N., Chemical bond approach to study the memory and threshold switching chalcongenide glasses, Indian Journal of pure & appl. phys. 29 (1991) 303-304.
|Leimer, F.; Stotzel, H.; Kottwitz, A., Isothermal electrical polarisation of amorphous GeSe films with blocking Al contacts influenced by Poole-Frankel conduction, Phys. Stat. Sol. (a) 29 (1975) K129-K132.
|Leung, W.; Cheung, N.; Neureuther, A.R., Photoinduced diffusion of Ag in GexSe1-x glass, Appl. Phys. Lett. 46 (1985) 543-545.
|Lolobov, A.V., "Photodoping of amorphous chalcogenides by metals", Advances in Physics, 1991. vol. 40, No. 5, pp. 625-684.
|M.N. Kozicki and M. Mitkova, Silver incorporation in thin films of selenium rich Ge-Se glasses, Proceedings of the XIX International Congress on Glass, Society for Glass Technology, 226-227 (2001).
|Matsushita, T.; Yamagami, T.; Okuda, M., Polarized memory effect observed on amorphous selenium thin films, Jpn. J. Appl. Phys. 11 (1972) 606.
|Matsushita, T.; Yamagami, T.; Okuda, M., Polarized memory effect observed on Se—SnO2 system, Jap. J. Appl. Jap. J. Appl. Phys. 11 (1972) 1657-1662.
|Mazurier, F.; Levy, M.; Souquet, J.L., Reversible and irreversible electrical switching in TeO2—V205 based glasses, Journal de Physique IV 2 (1992) C2-185 -C2-188.
|McHardy et al., The dissolution of metals in amorphous chalcogenides and the effects of electron and ultraviolet radiation, 20 J. Phys. C: Solid State Phys., pp. 4055-4075 (1987).
|Messoussi, R.; Bernede, J.C.; Benhida, S.; Abachi, T.; Latef, A., Electrical characterization of M/Se structures (M/Se structures (M=Ni, Bi), Mat. Chem. And Phnys. 28 (1991) 253-258.
|Mitkova, "Insulating and Semiconducting Glasses", Editor: P. Boolchand, World Scientific, New Jersey, 2000, pp. 813-843.
|Mitkova, et al., "Dual Chemical Role of Ag as an Additive in Chalcogenide Glasses", Physical Review Letters, Vo. 83, No. 19, pp. 3848-3851.
|Mitkova, M.; Boolchand, P., Microscopic origin of the glass forming tendency in chalcogenides and constraint theory, J. Non-Cryst. Solids 240 (1998) 1-21.
|Mitkova, M.; Kozicki, M.N., Silver incorporation in Ge—Se glasses used in programmable metallization cell devices, J. Non-Cryst. Solids 299-302 (2002) 1023-1027.
|Miyatani, Electrical Porperties of Ag2Se, 13 J. Phys. Soc. Japan, p. 317 (1958).
|Miyatani, S.-y., Electronic and ionic conduction in (AgxCu1-x)2Se, J. Phys. Soc. Japan 34 (1973) 423-432.
|Miyatani, S.-y., Ionic conduction in β-Ag2Te and βAg2Se, Journal Phys. Soc. Japan 14 (1959) 996-1002.
|Mizusaki et al. Kinetic Studies on the Selenization of Silver, 47 Bul. Chem. Soc. Japan,, No. 11 pp. 2851-2855 (Nov. 1974).
|Mott, N.F., Conduction in glasses containing transition metal ions, J. Non-Cryst. Solids 1 (1968) 1-17.
|Nakayama, K.; Kitagawa, T.; Ohmura, M.; Suzuki, M., Nonvolatile memory based on phase transitions in chalcogenide thin films, Jpn. J. Appl. Phys. 32 (1993) 564-569.
|Nakayama, K.; Kojima, K.; Hayakawa, F.; Imai, Y.; Kitagawa, A.; Suzuki, M., Submicron nonvolatile memory cell based onreversible phase transition in chalcogenide glassed, Jpn. J. Appl. Phys. 39 (2000) 6157-6161.
|Nang, T.T.; Okuda, M.; Matsushita, T.; Yokota, S.; Suzuki, A., Electrical and optical parameters of GexSe1-x amorphous thin films, Jap. J. App. Phys. 15 (1976) 849-853.
|Narayanan, R.A.;Asokan, S.; Kumar, A., Evidence concerning the effect of topology on electrical switching in chalcogenide network glasses, Phys. Rev. B 54 (1996) 4413-4415.
|Neale, R.G.; Aseltine, J.A., the application of amorphous materials to computer memories, IEEE transactions on electron dev. Ed-20 (1973) 195-209.
|Ovshinsky S.R.; Fritzsche, H., Reversible structural transformations in amorphous semiconductors for memory and logic, Mettalurgical transactions 2 (1971) 641-645.
|Ovshinsky, S.R., Reversible electrical switching phenomena in disordered structures, Phys. Rev. Lett. 21 (1968) 1450-1453.
|Owen, A.E.; Firth, A.P.; Ewen, P.J.S., Photo-induced structural and physico-chemical changes in amorphous chalcogenide semiconductors, Phil. Mag. B 52 (1985) 347-362.
|Owen, A.E.; LeComber, P.G.; Hajto, J.; Rose, M.J.; Snell, A.J., Switching in amorphous devices, Int. J. Electronics 73 (1992) 897-906.
|Owen, A.E.; LeComber, P.G.; Sarrabayrouse, G.; Spear, W.E., New amorphous-silicon electrically programmable nonvolatile switching device, IEE proc. 129 (1982) 51-54.
|Owens et al., Metal-Chalcogenide Photoresists for High Resolution Lithography and Sub-Micron Structures, Nanostructure Physics and Fabrication, pp. 447-451 (Academic Press, 1989).
|Pearson, A.D.; Miller, C.E., Filamentary conduction in semiconducting glass diodes, App. Phys. Lett. 14 (1969) 280-282.
|Pinto, R.; Ramanathan, K.V., Electric field induced memory switching in thin films of the chalcogenide system Ge—As—Se, Appl. Phys. Lett. 19 (1971) 221-223.
|Popescu, C., The effect of local non-uniformities on thermal switching and high field behavior of structures with chalcogenide glasses, Solid-state electronics 18 (1975) 671-681.
|Popescu, C.; Croitoru, N., The contribution of the lateral thermal instability to the switching phenomenon, J. Non-Cryst. Solids 8-10 (1972) 531-537.
|Popov, A.I.; Geller, I.KH.; Shemetova, V.K., Memory and threshold switching effects in amorphous selenium, Phys. Stat. Sol. (a) 44 (1977) K71-K73.
|Prakash, S.; Asokan, S.; Ghare, D.B., Easily reversible memory switching in Ge—As—Te glasses, J. Phys. D: Appl. Phys. 29 (1996) 2004-2008.
|Rahman, S.; Sivarama Sastry, G., Electronic Switching in Ge—Bi—Se—Te glasses, Mat. Sci. and Eng. B12 (1992) 219-222.
|Ramesh, K.; Asokan, S.; Sangunni, K.S.; Gopal, E.S.R., Electrical Switching in Germanium telluride glasses doped with Cu and Ag, Appl. Phys. A 69 (1999) 421-425.
|Rose,M.J.; Hajto, J;Lecomber, P.G.; Gage, S.M.; Choi, W.K.; Snell,A.J.; Owen, A.E., Amorphous silicon analogue memory devices, J. Non-Cryst. Solids 115 (1989) 168-170.
|Rose,M.J.; Snell, A.J.;Lecomber, P.G.; Hajto, J.; Fitgerald, A.G.; Owen, A.E., Aspects of non-volatility in a a—Si:H memory devices, Mat. Res. Soc. Symp. Proc. V258, 1992, 1075-1080.
|Safran et al., TEM study of Ag2Se developed by the reaction of polycrystalline silver films and selenium, 317 Thin Solid Films, pp. 72-76 (1998).
|Schuocker, D.; Reider, G., On the reliability of amorphous chalgogenide switching devices, J. Non-Cryst. Solids 29 (1978) 397-407.
|Sharma, A.K.; Singh, B., Electrical conductivity measurements of evaporated selenium films in vacuum, Proc. Indian Natn. Sci. Acad. 46, A, (1980) 362-368.
|Sharma, P., Structural, electrical and optical properties of silver selenide films, Ind. J. Of pure and applied phys. 35 (1997) 424-427.
|Shimakawa et al., Photoinduced effects and metastability in amorphous semiconductors and insulators, 44 Advances in Physics No. 6, 475-588 (Taylor & Francis Ltd. 1995).
|Shimizu et al., The Photo-Erasable Memory Switching Effect of Ag Photo-Doped Chalcogenide Glasses, 46 Bul. Chem. Soc. Japan, No. 12, pp. 3662-3665 (Dec. 1973).
|Snell, A.J..; Hajto, J.; rose, M.J.; Osborne, L.S.;Holmes, A.; Owen, A.E.; Gibson, R.A.G., Analogue memory effects in metal/a—Si:H/metal thin film structures, Mat. Res. Soc. Symp. Proc. V 297, 1993, 1017-1021.
|Snell, A.J.; Lecomber, P.G.; Hajto, J.; Rose, J. J.; Owen, A.E.Osborne, IlL., Analogue memory effects in metal/a—Si:H/metal memory devices, J. Non-Cryst. Solids 137-1138 (1991).
|Somogyi et al., Temperature Dependence of the Carrier Mobility in Ag2Se Layers Grown on NaCl and SiOx Substrates, 74 Acta Physica Hungarica, No. 3, pp. 243-255 (1994).
|Steventon, A.G., Microfilaments in amorphous chalcogenide memory devices, J. Phys. D: appl. Phys. 8 (1975) L120-L122.
|Steventon, A.G., The Switching mechanisms in amorphous chalcogenide memory devices, J. Non-Cryst. Solids 21 (1976) 319-329.
|Stocker, H.J., Bulk and thin film switching and memory effects in semiconducting chalcogenide glasses. App. Phys. Lett. 15 (1969) 55-57.
|Tai et al., Multilevel Ge-Se film based resist systems, SPIE vol. 333 Submicron Lithography, pp. 32-39 (Mar. 1982).
|Tai et al., Submicron optical lithography using an inorganic resist/polymer bilevel scheme, 17 J. Vac. Sci. Technol., No. 5, pp. 1169-1176 (Sept./Oct. 1980).
|Tanaka, K., Ionic and mixed conductions in Ag photodoping process, Mod. Phys. Lett B 4 (1990) 1373-1377.
|Tanaka, K.; Iizima, S.; Sugi, M.; Okada, Y.; Kukuchi, M., Thermal effects on switching phenomenon in chalcogenide amouphous semiconductors, Solid State Comm. 8 (1970) 387-389.
|Thornburg, D.D., Memory switching in a Type I amourphous chalcogenide, J. Elect. Mat. 2 (1973) 3-15.
|Thornburg, D.D., Memory switching in amorphous arsenic triselenide, J. Non-Cryst. Solids 11 (1972) 113-120.
|Thornburg, D.D.; White, R.M., Electric field enganced phase separation and memory switching in amorphous arsenic triselenide, Journal(??) (1972) 4609-4612.
|Tichy, L.; Ticha, H., Remark on the glass-forming ability in GexSe1—x and AsxSe1—x systems, J. Non-Cryst. Solids 261 (2000) 277-281.
|Titus, S.S.K.; Chatterjee, R.; Asokan, S., Electrical switching and short-range order in As—Te glasses, Phys. Rev. B 48 (1993) 14650-14652.
|Tranchant, P.; Peytavin, S.; ribes, M.; Flank, A.M.; Dexpert, H.; Lagarde, J.P., Silver chalcogenide glasses Ag—Ge—Se: Ionic conduction and exafs structural investigation, Transport-structure relations in fast ion and mixed conductors Proceedings of the 6th Riso International symposium, Sep. 9-13, 1985.
|Tregouet, Y.; Bernede, J.C., Silver movements in Ag2Te thin films: switching and memory effects, Thin Solid Films 57 (1979) 49-54.
|U.S. application No. 09/732,968, Gilton, filed Dec. 8, 2000.
|U.S. patent application Ser. No. 09/779,983, Moore, filed Feb. 2, 2001.
|U.S. patent application Ser. No. 09/921,518, Moore, dated Aug. 1, 2001.
|U.S. patent application Ser. No. 09/943,190, Campbell et al., filed Aug. 29, 2001.
|U.S. patent application Ser. No. 09/943,199, Campbell et al., filed Aug. 29, 2001.
|U.S. patent application Ser. No. 10/061,825, Gilton et al., filed Jan. 31, 2001.
|U.S. patent application Ser. No. 10/077,867, Campbell et al., filed Feb. 20, 2002.
|U.S. patent application Ser. No. 10/232,757, Li, et al., filed Aug. 29, 2002.
|Uemura, O.; Kameda, Y.; Kokai, S.; Satow, T., Thermally induced crystallization of amorphous Ge0.4Se0.6, J. Non-Cryst. Solids 117-118 (1990) 219-221.
|Uttecht, R.; Stevenson, H.; Sie, Ch.H.; Griener, J.D.; Raghavan, K.S., Electric field induced filament formation in As—Te—Ge glass, J. Non-Cryst. Solids 2 (1970) 358-370.
|Viger, C.; Lefrancois, G.; Fleury, G., Anomalous behaviour of amorphous selenium films, J. Non-Cryst. Solids 33 (1976) 267-272.
|Vodenicharov, C.; Parvanov, S.; Petkov, P., Electrode-limited currents in the thin-film M—GeSe—M system, Mat. Chem. And Phys. 21 (1989) 447-454.
|Wang, S.-J.; Milsium, G.R.; Camp, J.C.; Chen, K.-L.; Tigelaar, H.L., High-performance Metal/silicide antifuse, IEEE electron dev. Lett. 13 (1992)471-472.
|Weirauch, D.F., Threshold switching and thermal filaments in amorphous semiconductors, App. Phys. Lett 16 (1970) 72-73.
|West et al., Equivalent Circuit Modeling of the Ag|As0.24S0.36Ag0.40|Ag System Prepared by Photodissolution of Ag, 145 J. Electrochem. Soc., No. 9, pp. 2971-2974 (Sep. 1998).
|West, Dissertation: Electrically Erasable Non-Volatile Memory Via electrochemical Deposition of Multifractal Aggregates, Arizona State University, pp. title page-168 (UMI Co., May 1998).
|Wolf, Stanley et al. Silicon Processing for the VLSI Era-vol. 1. Lattice Press, Sunset Beach, CA 1986.*
|Yoshikawa et al., A new inorganic electron resist of high contrast, 31 Appl. Phys. Lett., No. 3, pp. 161-163 (Aug. 1977).
|Yoshikawa et al., Dry development of Se-Ge Inorganic photoresist, 36 Appl. Phys. Lett., No. 1, pp. 107-109 (Jan. 1980).
|Zhang, M.; Mancini, S.; Bresser, W.; Boolchand, P., Variagion of glass transition terperature, Tg. with average coordination number, <m>, in network glasses: evidence of a threshold behavior in the slope |dTg/d<m>| at the rigidity percolation threshold (<m>=2.4), J. Non-Cryst. Solids 151 (1992) 149-154.
|Citing Patent
|Filing date
|Publication date
|Oct 28, 2002
|Apr 12, 2005
|Micron Technology, Inc.
|Agglomeration elimination for metal sputter deposition of chalcogenides
|Nov 11, 2004
|Sep 12, 2006
|International Business Machines Corporation
|Circuit and method of controlling integrated circuit power consumption using phase change switches
|Sep 20, 2001
|Sep 19, 2006
|Micron Technology, Inc.
|Electro-and electroless plating of metal in the manufacture of PCRAM devices
|Dec 3, 2004
|Nov 21, 2006
|Micron Technology, Inc.
|Methods of depositing silver onto a metal selenide-comprising surface and methods of depositing silver onto a selenium-comprising surface
|Sep 2, 2004
|May 29, 2007
|Hewlett-Packard Development Company, L.P.
|Programming of programmable resistive memory devices
|Nov 2, 2005
|Sep 4, 2007
|Micron Technology, Inc.
|Electro-and electroless plating of metal in the manufacture of PCRAM devices
|Nov 2, 2005
|Oct 16, 2007
|Micron Technology, Inc.
|Electro- and electroless plating of metal in the manufacture of PCRAM devices
|Oct 9, 2003
|Dec 4, 2007
|Micron Technology, Inc.
|Electro- and electroless plating of metal in the manufacture of PCRAM devices
|Jun 23, 2006
|Sep 9, 2008
|Micron Technology, Inc.
|Methods of forming a resistance variable element
|Aug 11, 2008
|Dec 15, 2009
|Micron Technology, Inc.
|Methods of forming a resistance variable element
|Oct 15, 2007
|Apr 20, 2010
|Micron Technology, Inc.
|Electro- and electroless plating of metal in the manufacture of PCRAM devices
|Mar 16, 2006
|Aug 10, 2010
|Qimonda Ag
|Solid electrolyte memory element and method for fabricating such a memory element
|Dec 2, 2008
|Aug 2, 2011
|Electronics And Telecommunications Research Institute
|Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same
|Apr 20, 2010
|Jan 7, 2014
|Micron Technology, Inc.
|Methods of forming fast ion conductors and memory devices comprising diffused metal ions
|Apr 26, 2011
|Feb 24, 2015
|Micron Technology, Inc.
|Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same
|Dec 18, 2013
|Jan 26, 2016
|Asm Ip Holding B.V.
|Sulfur-containing thin films
|May 20, 2015
|Oct 4, 2016
|Asm Ip Holding B.V.
|Method for forming source/drain contact structure with chalcogen passivation
|Dec 18, 2013
|Oct 25, 2016
|Asm Ip Holding B.V.
|Sulfur-containing thin films
|Jan 28, 2015
|Apr 4, 2017
|Micron Technology, Inc.
|Methods of selectively doping chalcogenide materials and methods of forming semiconductor devices
|Oct 28, 2002
|Mar 13, 2003
|Jiutao Li
|Agglomeration elimination for metal sputter deposition of chalcogenides
|Sep 20, 2001
|Mar 20, 2003
|Klein Rita J.
|Electro-and electroless plating of metal in the manufacture of PCRAM devices
|Oct 9, 2003
|Apr 22, 2004
|Klein Rita J.
|Electro- and electroless plating of metal in the manufacturing of PCRAM devices
|Feb 13, 2004
|Aug 19, 2004
|Gilton Terry L.
|Non-volatile resistance variable devices and method of forming same, analog memory devices and method of forming same, programmable memory cell and method of forming same, and method of structurally changing a non-volatile device
|Sep 2, 2004
|Mar 2, 2006
|Perner Frederick A
|Programming of programmable resistive memory devices
|Nov 2, 2005
|Mar 30, 2006
|Micron Technology, Inc.
|Electro-and electroless plating of metal in the manufacture of PCRAM Devices
|Nov 2, 2005
|Apr 27, 2006
|Micron Technology, Inc.
|Electro- and electroless plating of metal in the manufacture of PCRAM devices
|Nov 11, 2004
|May 11, 2006
|International Business Machines Corporation
|Circuit and Method of Controlling Integrated Circuit Power Consumption Using Phase Change Switches
|Dec 3, 2004
|Jun 8, 2006
|Micron Technology, Inc.
|Methods of depositing silver onto a metal selenide-comprising surface, methods of depositing silver onto a selenium-comprising surface, and methods of forming a resistance variable device
|Mar 16, 2006
|Oct 5, 2006
|Cay-Uwe Pinnow
|Solid electrolyte memory element and method for fabricating such a memory element
|Jun 23, 2006
|Oct 26, 2006
|Mcteer Allen
|Methods of forming a resistance variable element
|Jul 6, 2006
|Jan 11, 2007
|Yumiko Anzai
|Device and manufacturing method thereof
|Oct 15, 2007
|Apr 10, 2008
|Klein Rita J
|Electro- and Electroless Plating of Metal in the Manufacture of PCRAM Devices
|Aug 11, 2008
|Dec 4, 2008
|Mcteer Allen
|Methods of Forming A Resistance Variable Element
|Dec 2, 2008
|Jun 11, 2009
|Electronics And Telecommunications Research Institute
|electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same
|Apr 20, 2010
|Oct 28, 2010
|Klein Rita J
|Electro- and Electroless Plating of Metal in the Manufacture of PCRAM Devices
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Mar 1, 2001
Owner name: MICRON TECHNOLOGY, INC., WASHINGTON
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Owner name: MICRON TECHNOLOGY, INC., IDAHO
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MOORE, JOHN T.;REEL/FRAME:014013/0199
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Owner name: OVONYX MEMORY TECHNOLOGY, LLC, VIRGINIA
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Effective date: 20160829


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The supplier supports Trade Assurance – A free service that protects your orders from payment to delivery.
Supplier's Trade Assurance Limit: US $30,000Learn More
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Shenzhen Huayou Macro New Energy Technology Co., Ltd.
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The supplier's company premises has been checked by Alibaba.com staff to ensure onsite operations exist there. A third-party verification company has confirmed the legal status of the supplier.
|Business Type:
|Guangdong, China (Mainland)
|Main Products:
|polymer battery,18650 battery,18650 battery pack,polymer battery pack
|Total Employees:
|201 - 300 People
|Total Annual Revenue:
|US$10 Million - US$50 Million
|Year Established:
|Top 3 Markets:
|Southeast Asia 5.00% South America 5.00%
|Product Certifications:
|CE,MSDS,UN38.3,Cargo Transportation Test Report,AOV
Shenzhen Huayou Macro Industry New Energy Technology Co., Ltd. is a manufacturer of mobile power and...
Shenzhen Huayou Macro Industry New Energy Technology Co., Ltd. is a manufacturer of mobile power and lithium battery with well-equipped testing equipment and strong technical force.
With a wide range, good quality, reasonable prices and stylish designs, our products are extensively used in mobile phone, digital product, solar energy, etc.
Our products are widely recognized and trusted by users and can meet continuously developing economic and social needs.
We welcome new and old customers from all walks of life to contact us for future business relationships and achieving mutual success!
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|lithium battery
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subset: commoncrawl


text:
Anybody have any pictures or do it yourself instructions on how to go about cleaning the ABS sensors in a 2001 passat 1.8 AUG.
I'm getting the annoying ABS and the brakes make a noise almost like the ABS detects that the brakes don't go in and kicks in. Something weird, sometimes it'll make a noise.
So I'm trying to trouble shoot the whole ABS thing but don't have a clue on how to go about it.


text:
Prospecting: Nine West Uses Clickable Video to Acquire, Engage Shoppers
To unveil its new fall line of fashion footwear — and capture the surge of consumers gravitating towards online video — women's fashion footwear, handbags and accessories cross-channel retailer Nine West launched a clickable online video campaign. For the campaign, Nine West partnered with ConciseClick, a provider of online clickable video, and debuted the technology in late August.
The featured clickable video presents Nine West's latest offerings, from lacings to animal prints, and allows viewers to point, click and purchase while watching. ConciseClick's web-based, video hot-spotting technology tagged the actual footwear and accessories within the streaming video as clickable links. Viewers can follow the tagged content and choose to click on what product they're interested in. Once the content has been clicked on, consumers are provided with product descriptions, price and the opportunity to directly purchase the product.
Clickable video enables Nine West to engage consumers with its fall fashion trends at the point of sale, without inundating them with pop-ups, flashy banners or pre-video advertisements. The approach seems to be working: The retailer's video received over 54,000 clicks in its first two days, as well as posting an engagement rate of 6.1 (the average viewer clicked six times during one viewing of the video).
"The integration of clickable video allows Nine West shoppers to fully interact with the brand, giving her instant access to the latest must-haves in an entertaining and shoppable format," said Robyn DeWolf, Nine West's vice president of marketing, in a ConciseClick press release.
Nine West's social media presence also received a boost from the company's use of clickable video. ConciseClick's technology allows Nine West's video to be shared, played and shopped directly from a user's Facebook wall. Fans of Nine West are also able to discover the brand's fall products via the clickable video on their Facebook news feed in a nondisruptive way. — Joe Keenan


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Date of Stay: October, 2011
This park is just off the freeway, but far enough off that you don't hear most of the highway noise. Very clean, and wide spaces, all paved, and close to shopping and restaurants. We will return.
Date of Stay: October, 2011
We stayed in the new "Big Rig" section. It's clean, and the roads are paved, extra long pull throughs. I-40 is very close so there is noise from the freeway. We will return.
Date of Stay: August, 2010
I would give this a 10 if the roads were paved. Our site was all rock and narrow, but we did have a view of the harbor. 50 amp fluctuated up and down, even when the park wasn't full. Over priced for what you actually got. We we also parked next to a small ravine, and it often smelled of sewer.
Date of Stay: August, 2010
Now this is what a campground for big rigs should be. PAVED roads and PAVED sites, all PAVED. Lots of grass and well taken care of. Park like grounds. We will return here.
Date of Stay: August, 2010
Way way overpriced for what you get. For $70.00 I expect paved roads and a paved patio, not a dusty dirty road for almost a mile to get to our site. Then the site was ALL rock, no grass. And now we've got these little hard shelled flying bugs everywhere. We will not be back.
Date of Stay: June, 2008
We stay at this park every year that we come to this area. It is clean, and now has sewer at each site. The staff is friendly. The only downside is the rock/gravel sites and road. The sites are now level since they put in sewer.
Date of Stay: July, 2007
This park is wonderful for families with children. There is lots to do, the grounds are well cared for, the staff is friendly and helpful. Parking can be a bit tough if you have a big rig and the campground is full. No 50 amp hookups. A few had concrete patios, but most did not. We would definitely return if the grandchildren are with us. The swimming pool is a bit small for the number of campground sites.
Date of Stay: June, 2007
This park has a lot of walking trails and a new playground for kids. The sites however are very small, and there is highway noise.
Date of Stay: May, 2007
This campground was clean and staff was friendly. It is however next to I-90, and a train tracks.
Date of Stay: May, 2007
Don't bother. This campground was not well kept. The grass was almost shin high and the lady behind us "mowed" her's with a weedeater. We had a shabby seasonal next to us, that should have been towed out to the weeds and left. The pull through sites (we had a back in) weren't much more than a gravel parking lot. Grey water was dumped in trench behind us.


text:
This content has been marked as final. Show 1 reply
1. Re: group above and left classic reportsfac586 Feb 3, 2013 9:59 AM (in response to user13653962)>
Please update your forum profile with a real handle instead of "user13653962".
how can i group above and left in an existing classic reports?What does "group above and left" mean? A demonstration layout on apex.oracle.com or here (using tags<tt>\
</tt> tags to preserve formatting) would be helpful.
The options for break formatting on classic reports are:

The basic built-in control break features.

Simple DIY break layout on any number of columns using analytics in the source query: +{message:id=10679160}+

Complex report layout with multi-level headings using analytics in the source query and a custom named column report template with conditional row templates: +{message:id=9816577}+
When you have a problem you'll get a faster, more effective response by including as much relevant information as possible upfront. This should include:

Full APEX version

Full DB/version/edition/host OS

Web server architecture (EPG, OHS or APEX listener/host OS)

Browser(s) and version(s) used

Region/item type(s) (making particular distinction as to whether a "report" is a standard report, an interactive report, or in fact an "updateable report" (i.e. a tabular form)
With APEX we're also fortunate to have a great resource in apex.oracle.com where we can reproduce and share problems. Reproducing things there is the best way to troubleshoot most issues, especially those relating to layout and visual formatting. If you expect a detailed answer then it's appropriate for you to take on a significant part of the effort by getting as far as possible with an example of the problem on apex.oracle.com before asking for assistance with specific issues, which we can then see at first hand.


text:
Three-time Agatha Award and two-time Derringer Award nominee for Best Short Story, Kindle Scout winning historical novelist, author of the Bruce Kohler mystery series
The latest from Liz: Liz is currently applying her editorial talents to Sisters in Crime's New York chapter's fourth Murder New York Style anthology, Where Crime Never Sleeps.
Liz recently crossed genres with two crime/urban fantasy short stories set in the 1950s, "Stalker," in the e-zine Spinetingler, and "Elvis and the Shifter," in Kings River Life.
An interview with Liz appeared in the most recent issue of Mysterical-E.
In 2017, a new Bruce Kohler story, "Death Will Help You Imagine," will appear in Ellery Queen's Mystery Magazine.
Together for the first time: The whole Bruce Kohler mystery series! Death Will Get You Sober and the other three novels, one novella, and five previously published mystery stories featuring recovering alcoholic Bruce Kohler (a New Yorker with a smart mouth and an ill-concealed heart of gold), world-class codependent Barbara (addicted to helping and minding other people's business), and terminal geek Jimmy (won't come out from behind his computer for anything less than murder) appear in a new unified e-book edition in 2016 under their original Death Will titles.
Liz's new historical novel, JOURNEY OF STRANGERS, is a Kindle Scout winner. This sequel to Voyage of Strangers follows Diego and Rachel back to Europe and beyond and introduces a new heroine, Joanna, a Jewish girl torn from her home in Lisbon and sent as a slave to the Isle of Crocodiles. While she struggles to survive, Rachel seeks purpose in the Sultan's harem and Diego in the uncharted waters along the African coast. In paperback and e-book formats.
Breaches & Betrayals: Collected Stories is a new e-collection that brings Liz's best non-series short crime fiction from Ellery Queen's Mystery Magazine, Alfred Hitchcock's Mystery Magazine, e-zines Mysterical-E, Beat to A Pulp, and Dark Valentine, and Wolfmont anthology Murder to Mil-Spec together for the first time.
Don't miss DEATH WILL PAY YOUR DEBTS, the new Bruce Kohler mystery (released in 2015 as Dead Broke). In this one, Jimmy runs into money trouble just when Barbara, about to turn forty, is ready for a wedding and a baby. When Jimmy's Debtors Anonymous sponsor gets murdered, Barbara becomes a suspect. In the meantime, Bruce's girlfriend Cindy's new position as a homicide detective conflicts with Bruce's determination to protect his friends and find the real killer.
Reviewers called it "a laugh-out-loud, profoundly compassionate page-turner," "delivering laughs along with a solid mystery." "[The] characters and their surroundings come to life as they sleuth their way through another dangerous mystery."
Liz's short story, "A Breach of Trust," was listed among the "Other Distinguished Mystery Stories of 2014" in Otto Penzler's Best American Mystery Stories 2014, guest editor, Laura Lippman, making it one of the year's top fifty mystery short stories. I'm in august company and proud to be included.
Readers seem to be enjoying VOYAGE OF STRANGERS. Readers can choose the e-edition, trade paperback, or audiobook.
Book blogger Stephanie M. Hopkins on Layered Pages called Voyage of Strangers "an amazing read...entertaining and exciting."
The Historical Novel Society called Rachel Mendoza of Voyage of Strangers "an enchanting protagonist, courageous, outspoken, and wise beyond her years" and says that the book itself offers "captivating fictionalized depiction of the Spanish conquest of Hispaniola [and] a vibrant and well-researched picture of Spain....The rich historical setting and the engaging Mendoza siblings combine with Zelvin's writing skills to make this a most enjoyable and thought-provoking read."
Ellery Queen's Mystery Magazine called the book "engaging and well researched."


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Students at UVA
Essential Computing Info for New Students
Consider These 6 Things When Preparing to Come to UVA
#1 Bring Technology Supported at UVA
When choosing what computer to bring with you to school, consider:
#2 Save on Software
Don't waste money paying for software that you can get no cost as a UVA student!
#3 Plan Ahead for the Inevitable
Don't underestimate the importance of a good warranty & regular file backups—before disaster strikes. You'll likely have a computing problem sometime while you're at UVA, so plan ahead.
#4 Learn Your Password
You won't need your Temporary password long, but you'll use your Permanent UVA password the whole time you're at the University—and beyond!
#5 Take It or Leave It?


text:
Jewel Buster
by: GameZen • 23
All Android applications categories
All Android games categories
by: GameZen • 23
Published: 2013-10-24, by Ana Gracia.
Jewel Buster is a traditional puzzle application in which you should try to obtain a high score by matching groups of same-colored jewels. Look at the screen and tap on the jewels in order to create big groups and continue doing so until the time's over.
You can play Classic, Action or Puzzle mode, which isn't actually original. The design of the interface is really good and everything works smoothly, so if you don't mind the repetitiveness, you might enjoy playing the game.
GameZen is the developer of Jewel Buster, a colorful and entertaining board game with many color jewels to match together. Remember that not all modes are available in the free version.
by Ana , Appszoom
Oct 24, 2013
from 23 reviews
Download Jewel Buster
Share this app


text:
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to continue.
Find YOUR Heart Walk Community Team and register
Use the Community Teams selection map to find a team in your local Heart Walk
Choose to
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"Sign" the waiver
Register to get your personal page. If you want a personalized link for your web page – remember to do it here!
Start your fundraising by making your own personal donation
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After you register, click continue at bottom of confirmation form
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add a YouTube video
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Let your friends and family know you have joined the Heart Walk
Email: Use an email template to start your message to family and friends,
import your address book
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Let your Facebook friends know you are fundraising for the AHA
too – update your Facebook status right from the Email section of your HQ
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Email contacts from your different email accounts to ask for their help and support of your fundraising
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text:
Victors of a nation-high 39 straight games at home, the Sooners came out flat and their comeback effort fell short in a narrow 41-38 defeat in front of 85,204 at a soggy, rain-soaked Oklahoma Memorial Stadium.
"I don't know that it has to be all that surprising at the end of the day," said head coach Bob Stoops. "Teams we play can come in here and beat us. Maybe sometimes too much is said about it, like it can't happen. That's what I told the players. Anyone who we will play the rest of the year will whoop us if we don't play better than we did today."
Stats more than back that up.
The Red Raiders out-gained the Sooners 572-536 and it was way more lopsided than that until the final minutes.
They had 27 first downs to OU's 24.
They had a pair of takeaways to zero for OU.
And they just dominated the time of possession battle 34:59 to 25:01, very indicative of the tempo the game was played at.
"Offensively, we were really poor executing the pass game and run game," Stoops said. "Outside of Roy's [Finch] run early, I thought what we tried to do the rest of the day wasn't very effective. I don't want to see a bunch of yards late. We had a chance late to have a chance to win. It was too little too late to put ourself in the hole we did."
That hole was as much as 24 points early in the second half and 17 on three other occasions.
OU carved into that lead but just fell short.
Follow me at twitter.com/joeyhelmer10 or facebook.com/joeyhelmer.


text:
Do you have any further information? Email the NZ Herald newsdesk.
Police have launched a homicide investigation after the body of a 37-year-old woman was found in the Wellington suburb of Miramar.
Police were called to a residential address shortly after 5.30pm, but yesterday wouldn't provide any details about the victim.
In a statement this morning they say the woman's body was discovered by her friend.
Armed police had been sent to the scene and left when it was confirmed there were no other people at the Brussels St property.
A scene examination is underway with forensic experts and an area canvass will be conducted with neighbours in the local area.
One neighbour, who did not want to be named, told APNZ the woman was "very nice, bubbly, always laughing''.
It was "terribly sad'' because the woman had two primary-aged children who lived with her but spent some weekends with their father.
The neighbour said she wasn't frightened, but just very sad about the incident.
Mercia Abbott lives across the street from the victim with her young baby.
She did not know the woman, but said the homicide was "a little bit scary''.
Terina Pakuria, who was away from her house yesterday, saw on Facebook there had been a homicide in her street.
"My aunty was staying and I raced home because I thought it was her. When I came around the corner and saw the police cars, I thought it was my house and I freaked out,'' she said.
She said she was relieved to be wrong but the homicide was still terribly upsetting.
Police spokesman Nick Bohm confirmed a person who knew the woman had been arrested for allegedly breaching a protection order.
However, no arrest over the woman's death had been made.
Mr Bohm would not disclose how recently the alleged protection order breach had taken place, but added more would be revealed at a press conference this afternoon.
The woman was believed to have died between Thursday and yesterday afternoon, he said.
"We are still undertaking inquiries with people known to the deceased, but at this stage that's the window we are looking at.''
The woman's house and other properties that shared its driveway were still cordoned off today.
Police and forensic staff could be seen continuing their examination of the property.
Detective Inspector Sean Hansen, Wellington District Field Crime Manager says they're appealing for witnesses.
"I am appealing to anyone who saw any people or vehicles at the Brussels Street property between Thursday evening until she was found late on Sunday afternoon to come forward and speak with Police".
Anyone with information is asked to call Wellington Police on (04) 381 2000 or to approach the officers who are in the area.


text:
ED Magedson – Founder
Ripoff Report
Citizens Property Insurance Corporation6706 Corporate Center Parkway Jacksonville, Florida USA
Citizens Property Insurance Corporation (CPIC Refuses Refund on Homeowner's Policy After House Sold) Jacksonville Florida
Does your business have a bad reputation?
Fix it the right way.
Corporate Advocacy Program™
Citizens Property Insurance Corporation (CPIC) issued a policy on my mother's home in Hollywood, FL. That policy was paid through August 14, 2013. My mother died on June 28, 2013. The house that was insured through CPIC was sold, with the closing occurring on July 15, 2013. A refund for the remaining balance was requested through the agent who handled my mother's account. The agent informed me today, August 12, 2013, that CPIC had denied the refund request.
What possible reason could CPIC have for denying this refund request? I have all the necessary documentation, such as the death certificate and the HUD-1 closing statement. There is still a bank account open in my mother's name in which the money can be deposited if they insist on making the check out in her name. The amount is not a lot -- about $165. It's just a matter of principle given that the policy holder passed away and the property was sold. CPIC did not provide a valid reason for denying the refund, nor are they willing to speak with me even though my mother is dead.
The bottom line is that the policy holder died, the house was sold, and the insurance policy was paid for around one month beyond the closing date of the sale. There is no plausible reason for CPIC to deny this refund. It appears as though they simply do not want to.
This report was posted on Ripoff Report on 08/12/2013 01:26 PM and is a permanent record located here: http://www.ripoffreport.com/reports/citizens-property-insurance-corporation/jacksonville-florida-32216-0973/citizens-property-insurance-corporation-cpic-refuses-refund-on-homeowners-policy-after-1075144. The posting time indicated is Arizona local time. Arizona does not observe daylight savings so the post time may be Mountain or Pacific depending on the time of year.
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SUBMITTED: Wednesday, August 14, 2013POSTED: Wednesday, August 14, 2013
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(CALDWELL, Idaho) — Rachel Schoger of Caldwell, Idaho, had been trying to have a baby for two years and eight months — a grueling wait interrupted by three positive pregnancy tests and three unexplained miscarriages.
After a fourth positive test, she went to her doctor for answers. The news was devastating.
"It's ectopic," Schoger recalled the doctor saying after a hormone test and an ultrasound. "I was so upset because we'd been trying for so long."
An ectopic pregnancy is one that occurs outside the womb, usually in one of the fallopian tubes. Because the fetus cannot survive and the mom could suffer life-threatening internal bleeding, ectopic pregnancies, which may account for as many as one in 40 pregnancies, are terminated at the earliest sign. Schoger's doctor recommended using methotrexate — a chemotherapy drug that would save her and her fallopian tube, and kill the doomed fetus.
Schoger was given two high-dose shots of methotrexate in the fatty tissue above her hips to abort her pregnancy, which was four weeks and five days along. Days later, she started having nightmares about a baby crying out in pain inside her. So when she returned to the doctor for a second round of shots a week later, she insisted on a follow-up ultrasound for peace of mind.
As the ultrasound technician rolled the probe over Schoger's pelvis, her jaw suddenly dropped. Schoger was still pregnant, and the fetus was in her uterus where it belonged.
Despite advances in medical imaging, roughly 40 percent of pregnancies diagnosed as ectopic are later revealed to be normal, intrauterine pregnancies, according to a 2002 study published in the journal Obstetrics and Gynecology.
And for women treated with methotrexate, the lapse can be catastrophic.
"Those fetuses that are misdiagnosed as ectopic and were actually in the uterus receive high doses of a teratogenic drug during early stage of development, and that causes malformations," said Dr. Yaron Finkelstein, an emergency physician at Sick Kids Hospital and professor of pharmacology and toxicology at the University of Toronto. "This is a serious problem, and one that's probably overlooked."
Finkelstein and colleagues described the effects of methotrexate on eight misdiagnosed ectopic pregnancies in a study published in the January issue of the American Journal of Obstetrics and Gynecology. Three of the pregnancies ended in miscarriage within two weeks after the injection; three were terminated surgically after the mothers were warned of the potential birth defects; and the remaining two were born — one stillborn at 30 weeks, the other born with severe malformations at 37 weeks.
Schoger, who was not part of the study, decided to follow through on her pregnancy despite the risks. And in January 2006, she gave birth to Seraphine.
"She was beautiful," said Schoger. "She had 10 fingers, 10 toes. She just looked so good."
But relief quickly gave way to panic as nurses struggled to take Seraphine's temperature. The baby, who, against all odds, appeared to be normal, had no rectum. She also lacked a vagina and a uterus, and has a malformed spinal cord. These are all birth defects Schoger is convinced stemmed from methotrexate exposure in the womb. She filed a lawsuit against the doctor and a jury trial is set for January 2013.
Copyright 2012 ABC News Radio


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Packed rail commuter services into Victoria and London Bridge suffered delays throughout the morning peak as trains failed to get a grip on slippery track.
Every Autumn - despite the millions of pounds spent to reduce the problem - a combination of wind and rain creates disruption on the capital's commuter network.
The wind blows the leaves from the trees onto the tracks where they stick in the wet conditions. The first train along crushes the leaves into a hard substance like black ice on the roads.
Trains then fail to get a grip causing others to stack up behind.
With wet and wind conditions set to continue - coupled with a heavy leaf fall - commuters can expect more delays.
Southern reported delays of up to 15 minutes due to "poor railhead conditions" - rail-speak for leaves on the line - between Oxted and Woldingham.
This affected services from Uckfield via Edenbridge to London Bridge and also East Grinstead to Victoria services via East Croydon.
A signal problem caused major delays for some Greater Anglia services into Liverpool Street.
This hit services from Hertford East via Broxbourne into London.
Buses replaced trains between Hertford East and Ware. Commuters were advised to use First Capital Connect trains instead from Hertford North. Tickers are being accepted.
London Midland reported some trains to and from Euston cancelled at short notice due to staff shortages. There were also delays of up to half an hour on other services.
Docklands Light Railway (DLR) services were delayed between Woolwich Arsenal and Bank/Stratford due to a broken down train.
- More about:
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- First Capital
- Hertfordshire
- Liverpool FC
- London
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We're going to court to stop President Trump from reversing protections for Arctic and Atlantic waters. More than 120 million acres of pristine Arctic waters depends on winning this fight. We're in this battle for as long as it takes. Please support all of our efforts to stop Trump's recklessness!
There are many unique American qualities to celebrate during our Independence Day. One is our nation's legacy of protecting wild lands.
Story update August 21 - Since we first published this story in July, the National Parks Service has also banned drones from flying over the Appalachian National Scenic Trail, which traverses 14 states from Georgia to Maine
In April, a video of a black bear and her cub scaling the vertical walls of Santa Elena Canyon in Big Bend National Park went viral. The video was taken by Stephanie Latimer who was kayaking the Rio Grande River in the canyon.
Watch it here:
The BLM auctioned a total of 3,000 acres in Nevada's Dry Lake Solar Energy Zone to three companies, marking the agency's first successful auction of solar energy development on public lands. Potential solar
Its not every day that one can encounter a nocturnal, semi-aquatic beaver. Which is why an encounter with a baby beaver is even more remarkable.
This op-ed, by The Wilderness Society's Arizona state director Mike Quigley and Veterans Writing Project founder Ron Capps, is cross-posted from Stars & Stripes.
On June 30, 1864, President Abraham Lincoln signed America's first land protection law. The Yosemite Grant protected areas in Yosemite Valley "for public use, resort, and recreation."
GO Week 2014 drew to a close with a ceremony on Capitol Hill honoring three conservation champions who are preparing to retire from Congress with the Great Outdoors Week Lifetime Achievement Award.
During GO Week (June 23-26), The Wilderness Society partnered with other conservation groups to remind the nation's leaders how much Americans care about the great outdoors.
The one year anniversary of the unveiling of America's historic Climate Action Plan is upon us. Measuring how far we have come in meeting the goals outlined in the plan and the work yet to be done is as important as the plan itself.
Trump is trying to open the Arctic Refuge to oil drilling. Tell Congress to defend this wild place.