text:
|Publication number
|Publication type
|Application number
|Publication date
|Apr 22, 1986
|Filing date
|Oct 30, 1984
|Priority date
|Aug 23, 1982
|Fee status
|Publication number
|Hung C. Lin
|Original Assignee
|Lin Hung C
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (6), Referenced by (11), Classifications (5), Legal Events (6)
|External Links: USPTO, USPTO Assignment, Espacenet
ZO -Z3 =(1-Z2)i/(1+Z2)
This is a continuation-in-part of application Ser. No. 06/410,309 filed Aug. 23, 1982 now abandoned.
In a large scale integrated circuits, metal-oxide-semiconductor field effect transistors or MOSFETS are integrated in a monolithic semiconductor substrate. The design and fabrication of a large scale integrated circuit is time consuming and costly. For cost-effectiveness, it is customary to simulate the circuit design with computer-aided analysis. How well the simulation can predict the performance depends on the accuracy of the models used in the simulation program. Since MOSFETS constitute the bulk of large scale integrated circuits, accurate modeling of the MOSFETS is the key in any simulation program.
In large scale integration, the channel length of MOSFET is scaled down to permit higher packing density. For short channel MOSFETs, the conventional one-dimensional analysis is not adequate to calculate the current voltage characteristics because of two-dimensional charge sharing effect at the source and drain junctions. Two-dimensional solution of the Poisson's equation is difficult to obtain analytically. Most investigators resort to numerical methods to attack the problem. Unfortunately, the progress is long and tedious, and impractical to be incorporated in a circuit analysis program. This invention presents a speedy method to simulate the characteristics of a short channel MOSFET, taking into account the two-dimensional effects.
An object of the present invention is to devise a method of simulating the characteristics of a semiconductor MOSFET. Another object of the present invention is to simulate the characteristics of a short channel semiconductor MOSFET taking into account two-dimensional charge sharing effect. Still another object of the present invention is to devise a means of calculating the change in threshold voltage along the channel of an MOSFET. A further object of the present invention is to accurately model a short channel MOSFET for such applications as the computer-aided analysis of integrated circuits.
These objects are achieved in the present invention by connecting in series a number of incremental MOSFETs, having different threshold voltages. Each threshold voltage is analytically obtained by linearizing the non-parallel, two-dimensional edges of the gate depletion layer and the junction depletion layer into a regular shape (such as a rectangle) using conformal mapping. The equidistant thickness of the linearized contour, (e.g. the rectangle) is transformed back to the original plane to determine the distance between the non-parallel contours of the charge sharing region. This distance is proportional to the decrease in threshold voltage. Once the threshold voltage from point to point is known, the incremental channel conductance can be found. Then the current voltage characteristic can be obtained.
In the drawings:
FIG. 1 shows the charge distribution of an MOS structure at strong inversion.
FIG. 2A shows the charge distribution when two depletion layers do not overlap.
FIG. 2B shows the charge sharing effect when two depletion layers overlap in one dimension.
FIG. 3 shows the cross-section view of the charge sharing effect in two dimensions.
FIG. 4 shows a model of an MOSFET based on the present invention.
FIG. 5A shows the circuit connecting a number of MOSFETs in series according to the present invention.
FIG. 5B shows another version of connecting a number of MOSFETs in series with respective substrate connections indicated.
FIG. 6A shows the potential distribution when two depletion layers do not overlap.
FIG. 6B shows the potential distribution when two depletion layers overlap.
FIG. 7 is a flow-chart showing how the present invention can be implemented with a computer or calculator to simulate the characteristics of an MOSFET.
FIG. 8 is a sample simulation of an MOSFET characteristic using the present invention.
In an MOS structure the threshold voltage is defined as the gate voltage required to induce strong inversion. A one-dimensional charge distribution for a p-type background is depicted in FIG. 1. The gate voltage must be capable of inducing an inversion layer QN1 and a depletion layer W1 at strong inversion.
When an N+ P junction J is placed far away at the back of the p-type background (as in the case of a buried channel Charge Coupled Device), the situation is depicted in the lower part of FIGS. 1 and 2(A). Note that the back junction induces a depletion layer W2. The electric field lines such as BS1 B1 and Ds1 D1 are equal to W1 ; Fj1 F1 and Gj1 G1, equal to W2. The threshold voltage is unaffected by the presence of the back junction for this condition. However, when the back junction is placed closer to the surface, the two depletion layers overlap. Now the back junction shares some charge in the depletion layer as shown in FIG. 2(B). The gate is no longer required to induce as much charge as in FIG. 1 or 2(A) for the same amount of inversion layer charge. Thus the threshold voltage is reduced. Using the depletion approximation, the reduction in threshold voltage ΔVT is proportional to the amount of shared charge Q, which is proportional to the distance S1 between the edges B1 D1 and F1 G1 of the depletion regions W1 and W2 in FIG. 2(B). Analytically, ##EQU1## where NA is the background impurity concentration and COX is the gate oxide capacitance per unit area.
When the gate and the back junction are parallel to each other along the length of the MOS structure, the charge sharing region is a rectangle bounded by lines π and K as shown in FIG. 2(B) in a plane referred to as Z1. The threshold voltage at every point along the length of the gate is the same, because the thickness S1 such as F1 G1 or D1 F1 of the charge sharing rectangular region is the same. The quantity ΔVT is represented by the thickness of the charge sharing region. When ΔVT is differentiated with respect to the distance between the depletion layer edges, the derivative is d(ΔVT)/dX1 =ΔVT /S1. Conversely one can find S1 if we know the derivative. ##EQU2## The derivative d(ΔVT)/dX1 has the dimension of an electric field and is constant for a uniform background concentration NA.
d(ΔVT)/dX1 =qNA /COX (3)
Mathematically, a constant derivative implies that the function is analytic. For an analytic function one can use conformal mapping to change the shape of the charge sharing region.
In an actual MOSFET, the back junction is the source and drain diffusion. The cross section view of the MOSFET is shown in FIG. 3 and referred to as Z2 plane. In this structure, the source junction has a depth RJ and assumes a circular shape. The boundary of the depletion layer of the source junction E2 F2 G2 H2 is concentric with the junction contour but the radius is larger by a length W2. The boundary of the depletion layer induced by the gate is away from the inversion layer (usually very thin and hence not shown) by a depth W2. The boundary A2 B2 C2 D2 E2 has two sections: Section A2 B2 C2 describes an arc with radius W1 which intersects with the junction at a point A1 ; Section C2 D2 E2 is a straight line parallel to the gate.
Note that the section A2 B2 D2 in FIG. 3 corresponds to the section A1 B1 D1 in FIG. 2 and section F2 G2 H2 corresponds to section F1 G1 H1 in FIG. 2. However, due to the non-parallel surfaces of A2 B2 C2 and E2 F2 G2 H2 the field line SD from D2 to F2 and the field line SB from B2 to G2 are unequal in length. Thus the corresponding decrease in threshold voltage are also unequal because ΔVT is proportional to the shared charge region thickness as given by Eq. (1).
The path DS2 D2 F2 F2J in FIG. 3 corresponds to the path DS1 D1 F1 FIJ in the parallel plate geometry in FIG. 2(B). It should be pointed out that for every point such as D2, there is a corresponding point D2S at the surface along the same path. It is at this point DS2 that the threshold voltage is reduced by ΔVT =qNA SD /COX.
From FIG. 3, it can be seen that SB, which terminates at a point BS2, is longer than SD, which terminates at DS2. Thus the reduction in threshold voltage at BS2, which is closer to the junction than DS2, is larger than that at DS2. The reduction in threshold voltage is largest near the junction and tapers off as the distance from the junction increases.
The shared charge region length such as SB in FIG. 3 is curvalinear. To linearize its length, one can utilize the Schwartz-Christoffel Transformation. Such a transformation is permissible since the function ΔVT in Eq. (1) is analytic.
The sections C2 D2 E2 and E2 F2 G2 H2 in the Z2 plane of FIG. 3 can be linearized into two parallel plates A1 B1 D1 and F1 G1 H1 as shown in FIG. 2(B) using the following Schwartz-Christoffel Transformation ##EQU3## It should be pointed out that Z1 and Z2 are normalized dimensions, with O2 E2 in the Z2 plane normalized to unity and the distance O O2 equal to cot K. After transformation, the distance between the two parallel plates A1 B1 D1 and F1 G1 H1 is π-K. If a voltage V is applied across these plates, the normalized electric field is ##EQU4##
In the Z2 plane, the length of a field line SD is equal to ##EQU5## By differentiating Eq. (4), one obtains along Y2 axis ##EQU6## From Eqs. (5), (6), (7) ##EQU7##
The section A2 B2 C2 in the Z2 plane is an arc, but can be linearized into a straight line along the X2 axis by another transformation ##EQU8## The length of a field line such as SB between B2 and G2 can be obtained from the relationship ##EQU9## In this latter transformation the point A2 in the Z2 plane is transformed into point A3 in a Z3 plane. The location A3 with respect to O2 is X2m ##EQU10## where X20 =ARJ [A is defined in Eq. (16)]
θ=arc sin (RJ /D1) for RJ <D1 /√2 (12a)
θ=arc cos (D1 /2RJ) for RJ >D1 /√2 (12b)
A short channel MOSFET can be divided into three different sections according to charge sharing effect as shown in FIG. 4. The first section MS is the region where there is charge sharing between the gate depletion layer and the source depletion layer. In this section, the threshold voltage varies from the lowest value next to the source junction to a maximum value at a point where the source depletion layer ends. Because this section has lower threshold voltages, the channel conductance is high and the characteristic is essentially ohmic.
The section MD near the drain is another shared charge region, where drain junction depletion layer merges with the gate depletion layer. The threshold voltage varies from a minimum next to the drain junction to a maximum toward the center of the gate. The V-I characteristic of this section is more nonlinear than MS section because a higher drain voltage tends to pinch off the channel near the drain.
In the middle section MO, there is no charge sharing effect. The transistor behaves like a regular MOSFET. However the channel length of this section is shortened by the shared charge regions near the source and the drain.
Thus a short channel MOSFET can be modeled as a three section device as shown in FIG. 4.--an ohmic section at the source end, a conventional MOSFET at the middle with shortened channel length, and a variable threshold voltage section at the drain end.
The general voltage increment along a channel can be expressed as ##EQU11## where μ is the mobility, COX is the gate oxide capacitance per unit area, W is the channel width and VT is the threshold voltage and is reduced at the shared charge regions.
where VTO is the threshold voltage in the absence of charge sharing effect.
Consider first the MS section. The threshold voltage reduction along the arc A2 B2 C2 in FIG. 3 is obtained from Eqs. (1) and (8) ##EQU12## where A is a normalizing factor
A=csc K/(RJ +W2) (16)
In the MS section, the voltage drop is small and V can be neglected. Integration can most conveniently proceed along A3 'B2 C2. ##EQU13## For the line C2 D2 E2, ΔVT is given in Eq. (8). ##EQU14## where H=(VGS -VTO +VO)1/2
For the middle section MO, we can use the conventional characteristic equation for VDS. Let V1 =I(RS1 +RS2)
V2 =VG -VTO -[(VG -V1 -VRO)2 -2L'I/μCOX W]1/2 (19)
The effective channel length is the difference between the metallurgical length and the depletion layers at the drain and the source as shown in FIG. 3
For the section MD near the drain, the situation is similar to that at the source. However, the voltage V in the denominator of Eq. (13) cannot be neglected, because the drain voltage can be substantial. The set of equations corresponding to that used for the source section are as follows with symbols primed (')
D'=(2ε/qNA)1/2 (2φF +VDS +VBS)1/2(21)
cos K'=W1 /W2 '+RJ) (22)
A'=csc K/(RJ +W2 ') (23) ##EQU15##
The summation of the voltage drops across each section is the total drain-to-source voltage.
Thus for any assigned value of ID, there is a corresponding VDS.
Each of the charge sharing sections, MS and MD, can further be broken up into a number of incremental MOSFETs as shown in FIG. 5(A). Each incremental MOSFET such as MS1, MS2 etc. has a different threshold voltage as given in equations (15), (25) and (26). The incremental drain to source voltage drops dV are given by equation (13). The total drain to source voltage is simply the summation of these incremental drops.
In this circuit, a number of incremental MOSFETs such as MS1, MS2 . . . etc. and MD6, MD7 . . . etc. and connected in series. Each incremental MOSFET has a drain, a gate a source and a background. For instance, the incremental MOSFET MS1 has a corresponding drain D1, a source S1, a gate G1 and a background B1. In the series connection, the drain of MS1 is connected to the source of MS2 ; the drain of MS2 is connected to the source of next incremental MOSFET and so forth. The gates of all the incremental MOSFETs are connected together. Similarly the drain section MD also consists of a number of incremental MOSFETs MD6, MD7 . . . in series.
For simplicity the background of each incremental MOSFET is connected to its respective source, eg. S1 connected to B1 as shown in FIG. 5(b). Only the middle section MO has its background BO connected to the substrate B. The substrate B is connected to an external terminal, where an external voltage VBS can be applied to vary the threshold voltage of MO as is well-known in the art. When the external substrate bias is increased, the depletion layer charge such as QB1 in FIG. 1 is increased. Therefore, the threshold voltage of MO can be increased by increasing VBS.
The reason for connecting the source and the background for each incremental MOSFET can be understood from FIG. 6(A) and FIG. 6(B), which are potential distribution diagrams corresponding to the charge distribution depicted in FIG. 2(A) and FIG. 2(B). The potential distribution corresponding to the non-overlapping charge distribution depicted in FIG. 2(A) and FIG. 2(B). The potential distribution corresponding to the non-overlapping charge distribution depicted in FIG. 2(A) is shown in FIG. 6(A). The left-hand side corresponds to the oxide-semiconductor interface and the potential varies from 2φF, which is the surface potential to cause strong inversion and corresponds to the potential at DS1 or BS1 in FIG. 2(A), down to the substrate potential VBS. This substrate potential corresponds to the potential at D1 or B1 in FIG. 2(A), which is also the minimum potential φmin. The right hand side corresponds to the back junction and the potential varies from a potential φj down to VBS at F1 or G1.
The potential distribution corresponding to the overlapping charge distribution in FIG. 2(B) is shown in FIG. 6(B). The potential distributions, shown in dotted lines due to the gate voltage and the back junction, are similar to that in FIG. 6(A). However the combined potential distribution as shown in solid line has a potential minimum φmin where the two individual potential distributions meet. This minimum potential is above the substrate potential VBS at φF1 and φD1. As VBS is decreased from say 0 to -VBS, the tail of the individual potential extends to a lower level but the intersecting point φmin is essentially unchanged. In other words, the minimum potential is insensitive to the substrate bias. For this reason, the source and the background of any incremental MOSFET can be connected together.
The characteristics of the series incremental transistor shown in FIG. 5 can readily be simulated with computer-aids. The incremental voltage drop is given in Eq. (13). The voltage in the denominator of Eq. (13) is the sum of the incremental voltage drops up to a particular point X starting from the source.
The foregoing description can readily be applied to a computer of a handheld calculator to find the voltage-current relationship of a short channel MOSFET. A possible programming flow chart is shown in FIG. 7, which is also a summary of this new method. Iterative numerical methods such as Newton's method, bisection method or regula-falsi method may be used to find the drain current.
A sample calculation of V-I characteristics is shown in FIG. 8 as curve 2D. Also plotted on the same graph as curve 1D is the characteristic using the classical one-dimensional equation. Note that the 2D curve described here yields a substantially higher drain current than the 1D curve and is not saturating. This is in agreement with experimental results many investigators observed.
While FIG. 3 describes a particular shape of MOSFET, this linearizing transformation technique is not limited to this geometry. The Schwartz-Christoffel transformation can be applied to a variety of two-dimensional geometries and linearize them into rectangular configuration.
Note also that the reduction in threshold voltage, as calculated from Eqs. (8) and (10), are functions of X2 and Z2 plane. Thus one can generalize by stating that the change in threshold voltage can be expressed as a function of X2.
|Cited Patent
|Filing date
|Publication date
|Mar 13, 1978
|Jul 29, 1980
|Massachusetts Institute Of Technology
|Parity simulator
|Oct 9, 1979
|Oct 6, 1981
|Carlo Gavazzi S.P.A.
|Apparatus for generating signals simulating the output of a device for measuring a physical variable
|Jun 25, 1980
|Jun 1, 1982
|Gte Automatic Electric Laboratories, Inc.
|Switched-capacitor floating-inductor simulation circuit
|Aug 11, 1980
|Oct 12, 1982
|Gte Automatic Electric Laboratories, Inc.
|Switched-capacitor source resistor simulation circuit
|Jul 30, 1980
|Dec 14, 1982
|Siemens Aktiengesellschaft
|Switched-capacitor filter circuit having at least one simulated inductor
|Jun 10, 1981
|Jan 10, 1984
|La Telemecanique Electrique
|Device for simulating an instantaneous temperature-rise of a semiconductor component in order to protect same
|Citing Patent
|Filing date
|Publication date
|Nov 12, 1987
|Mar 21, 1989
|University Of Toronto, Innovations Foundation
|Simulation apparatus
|Jun 26, 1986
|May 30, 1989
|University Of Toronto Innovations Foundation
|Apparatus for analog simulation of a circuit
|Mar 30, 2005
|Jan 26, 2010
|Broadcom Corporation
|High voltage gain topology for analog circuits in short channel technologies
|Jun 9, 2009
|Jul 10, 2012
|Renesas Electronics Corporation
|Method and apparatus for analyzing and designing semiconductor device using calculated surface potential
|Jan 13, 2010
|Jun 4, 2013
|International Business Machines Corporation
|High speed measurement of random variation/yield in integrated circuit device testing
|Jul 13, 2010
|Feb 25, 2014
|Spansion Llc
|Body-bias voltage controller and method of controlling body-bias voltage
|Feb 25, 2011
|Apr 8, 2014
|Peregrine Semiconductor Corporation
|Systems and methods for current sensing
|Mar 30, 2005
|Oct 12, 2006
|Broadcom Corporation
|High voltage gain topology for analog circuits in short channel technologies
|Jun 9, 2009
|Dec 24, 2009
|Nec Electronics Corporation
|Method for analyzing and designing semiconductor device and apparatus for the same
|Jul 13, 2010
|Jan 20, 2011
|Fujitsu Semiconductor Limited
|Body-bias voltage controller and method of controlling body-bias voltage
|Jan 13, 2010
|Jul 14, 2011
|International Business Machines Corporation
|High speed measurement of random variation/yield in integrated circuit device testing
|U.S. Classification
|703/4, 327/434
|International Classification
|Cooperative Classification
|European Classification
|Nov 21, 1989
|Maintenance fee reminder mailed
|Dec 26, 1989
|Surcharge for late payment
|Dec 26, 1989
|Fee payment
Year of fee payment: 4
|Nov 30, 1993
|Maintenance fee reminder mailed
|Apr 24, 1994
|Lapse for failure to pay maintenance fees
|Jul 5, 1994
|Expired due to failure to pay maintenance fee
Effective date: 19940705


text:
Their findings could lay the groundwork for future researchers seeking to develop a new generation of computer chips and other information-storage devices that can hold vast amounts of data and be strongly encrypted for security purposes.
Working with a team of researchers from various disciplines, Naresh S. Dalal and Sir Harold W. "Harry" Kroto, both world-renowned chemists and educators, took a close look at a family of crystals known as metal-organic frameworks, or MOFs. Employing both laboratory experimentation and computational analysis, they found that four such crystals possessed properties that rarely coexist.
"We identified these four crystals as 'multiferroic,' meaning that they are simultaneously ferromagnetic and ferroelectric in nature when cooled to a specific temperature," said Dalal, Florida State's Dirac Professor of Chemistry and Biochemistry. (Ferromagnetism means a material possesses magnetic poles, while ferroelectricity refers to a material that possesses positive and negative electrical charges that can be reversed when an external electrical field is applied.)
"Normally, these two properties are mutually exclusive," Dalal said. "Most materials are either ferromagnetic or ferroelectric based on the number of electrons in the ion's outer electron shell. Therefore, finding four multiferroic materials at one time is quite scientifically significant and opens numerous doors in terms of potential applications."
Multiferroic materials have been a hot topic of research in recent years, with researchers finding applications in the areas of hydrogen storage and the design of advanced optical elements, among others. Kroto sees another potential use: in the creation of high-powered computer memories and other data storage devices that can hold far more information than is currently possible.
"Theoretically, it might be possible to design devices that are much smaller and faster than the ones we use today to store and transmit data," said Kroto, a Francis Eppes Professor in Florida State's Department of Chemistry and Biochemistry. "And with data split over two mediums, information could be encrypted in a way that makes it far more secure than is currently possible. This could have wide-ranging applications in areas as diverse as the aeronautics industry, the military, the workplace and even the average consumer's home."
Dalal pointed to another possible benefit — high-tech devices that make far less of an environmental impact.
"The four new multiferroic crystals that we have identified all substitute other, less toxic metals for lead, which is a potent neurotoxin," he said. "By reducing the amount of lead that enters landfills, we also reduce the amount that enters our water supply — and our bodies."
Dalal, Kroto and their colleagues recently published a paper on their findings in the peer-reviewed Journal of the American Chemical Society (JACS). Their research was then summarized in a second article published in the prestigious international science journal Nature — a powerful symbol of the significance with which their findings have been greeted within the worldwide scientific community.
"On the basis of the type of materials research I was keen to initiate here at Florida State, it was natural to collaborate with Dr. Dalal due to his deep understanding of the complexities of phase transitions," Kroto said. "It is in particular the subtle aspects of phase behavior, well beyond those traditional ones exhibited by normal gases, liquids and solids, that led to this work being highlighted recently by Nature and Angewandte Chemie." (The latter is a prominent, peer-reviewed scientific journal that reviews all aspects of chemistry.)
In addition to Dalal and Kroto, other collaborators from Florida State were Ronald J. Clark, an emeritus professor of chemistry and biochemistry who continues to conduct research; Prashant Jain, a graduate research assistant; and Vasanth Ramachandran, a graduate teaching assistant. Additional researchers were Haidong Zhou, an assistant scholar/scientist at the National High Magnetic Field Laboratory in Tallahassee; Anthony K. Cheetham, Professor of Materials Science and Metallurgy at the University of Cambridge in England; and Brian H. Toby, a senior physicist at Argonne National Laboratory in Illinois.
In the world of science, Dalal and Kroto are known as scientific heavy hitters, each with decades of research experience and scores of professional accolades to his credit. Kroto is perhaps best known as one of three recipients of the 1996 Nobel Prize for Chemistry and Biochemistry for his co-discovery of buckminsterfullerene, a form of pure carbon better known as "buckyballs." He came to Florida State in 2004 after 37 years at the University of Sussex in England. Dalal, meanwhile, was recognized in 2007 as one of the top scientists in the southern United States by the Memphis Section of the American Chemical Society, which selected him to receive its Southern Chemist Award. That same year, he was named the top chemist in Florida by the Florida Section of the American Chemical Society, which bestowed upon him its annual Florida Award.
Narseh Dalal | EurekAlert!
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'Angels Play...' is an original artwork painted in inks, pencil and acrylic on hand stained paper measuring 215mm x 295mm in size.This beautiful work has the words 'Your coat is made of magic and around your table Angels play...' written into the design...these words are taken from a favourite 'Waterboys' song of mine entitled 'When ye go away'This work has copper acrylic details delicately painted in and they give a beautiful rich finish to the work...I'm not sure the high res scan does these details justice but suffice it to say, the work is so much better 'in the flesh'
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From the Publisher"A good introduction to a topic that always seems to fascinate children."School Library Journal.
North American Indiansby Douglas Gorsline
Illus. in full color. Describes more than a dozen American Indian tribes.
Illus. in full color. Describes more than a dozen American Indian tribes.
Editorial Reviews
Product Details
- 9780394837024
- Publisher:
- Random House Children's Books
- Publication date:
- 04/28/1978
- Series:
- Pictureback(R) Series
- Pages:
- 32
- Sales rank:
- 290,682
- Product dimensions:
- 8.00(w) x 8.00(h) x 0.19(d)
- Lexile:
- AD830L (what's this?)
- Age Range:
- 3 - 7 Years
Customer Reviews
Average Review:
Most Helpful Customer Reviews
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based on 0 ratings. 2 reviews.
I read this picture book aloud to my children. The illustrations are nice and colourful, and the book provides a good overview (without overwhelming young listeners) of various North American Indian tribes. I found the content interesting and age appropriate, and it is a good addition to our studies concerning Native Nations! I also remember reading this book when I was a child, and I loved it then as much as I do now! MY RATING: 5 stars! I loved it!! Highly recommended!
This book covers many tribes and gives a great overview to my students when we are studying Native Americans. I have many copies and my fifth grade students all have to read this wonderful book as part of our study of Indians. Native American homes, food, and adapttion to environment are all covered for different regions of the US.


text:
|Publication number
|Publication type
|Application number
|Publication date
|Dec 13, 1988
|Filing date
|Jan 12, 1987
|Priority date
|Jan 14, 1986
|Fee status
|Also published as
|Publication number
|August Winsel, Rudolf Staab, Nikolaj Medic
|Original Assignee
|Hoechst Aktiengesellschaft
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (6), Referenced by (2), Classifications (9), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
The invention relates to a process for the electrolysis of aqueous alkali metal chloride solutions by the membrane method in an electrolysis cell which is equipped with a porous cathode and in which the cell wall, together with the side of the cathode facing away from the cathode chamber, forms a closed space ("gas space").
About 50% of the world capacity for production of elemental chlorine is produced in electrolysis cells which operate by the amalgam process. The theoretical decomposition voltage of an alkali metal chloride in the mercury cell is about 3.15 to 3.20 volt. In contrast, a theoretical decomposition voltage of about 2.20 volt results if the alkali metal chloride electrolysis is carried out in a membrane cell with a cathode which generates hydrogen. The cell voltage can consequently theoretically be reduced by about 1 volt by introducing the membrane process, which is of considerable economic importance in times of increasing energy costs.
The membrane cell for the alkali metal chloride electrolysis usually consists of two electrolysis chambers each with an electrode which evolves a gas, the chambers being separated from one another by a cation exchanger membrane. Perforated materials, such as perforated sheet metals, rib meshes, networks and the like, are used in practice as electrode substrates. The perforated electrode structure is necessary so that the gas formed can be removed to the reverse side of the electrode as rapidly as possible and the resistance of the electrolyte is thus not increased unnecessarily by the formation of a gas cushion between the anode and cathode.
Because of the excess voltages for evolution of chlorine and hydrogen, catalyzed electrodes are used. On the anode side, titanium has proved to be a suitable electrode substrate, this being activated with noble metal oxides. Normal steel, stainless steel or nickel electrodes, which can be activated with noble metals or Raney nickel, are employed for cathodic evolution of hydrogen. Raney nickel is particularly suitable for catalyzing liberation of hydrogen, not least because of its extremely high internal surface area. On the other hand, however, it is difficult to apply Raney nickel to perforated electrode structures such as perforated sheet metals or rib meshes. Raney nickel electrodes have therefore previously been available only in the form of coated plates or coated sheet metals. When such sheet-like electrodes are incorporated into an electrolysis cell, however, there is the risk of the "gas bubble effect", that is to say a gas cushion forms between the cathode and cation exchanger membrane since the hydrogen is preferentially liberated on the front side of the electrode. The resistance of the electrolyte increases and the cell voltage and energy consumed become uneconomically high.
A simple process for the production of a porous foil-like gas electrode based on Raney nickel is described in German 0ffenlegungsschrift No. 3,342,969. However, the "gas bubble effect", that is to say the formation of a gas cushion between the electrode and membrane, also occurs in alkali metal chloride electrolysis with such an electrode.
There was, therefore, the object of developing a process for the electrolysis of alkali metal chloride solutions in which the formation of the gas cushion between the cathode and membrane is eliminated as far as possible. In particular, this process should be suitable when porous foil-like Raney nickel cathodes are used.
A process has now been found for electrolyzing aqueous alkali metal chloride solutions in a membrane cell which contains an anode chamber with the anode and a cathode chamber with the cathode, the two chambers being separated from one another by a cation exchanger membrane, in which the cathode is porous and foil-like, the cathode and cation exchanger membrane form the actual cathode chamber filled with catholyte, the cathode and cell wall form a gas space, water is fed into the cathode chamber and alkali metal hydroxide solution is withdrawn from it, hydrogen is withdrawn from the cathode chamber and gas space, aqueous alkali metal chloride solution is fed into the anode chamber and gaseous chlorine, together with depleted alkali metal chloride solution, is withdrawn from it, and a direct voltage which is at least the same as the decomposition voltage is applied to the cathode and anode. The process comprises establishing a higher pressure in the cathode chamber than in the gas space.
An electrolytic process for the preparation of sodium hydroxide solution using a cation exchanger membrane and a foil-like cathode is already known from German Offenegungsschrift No. 3,332,566. In this process, however, the cathode is operated as an oxygen diffusion cathode, so that no hydrogen is obtained.
An advantage of the process according to the invention is that most of the hydrogen produced during the electrolysis is transported through the cathode to its reverse side and can be disposed of there in a simple manner. Separation of the hydrogen from the alkali produced is thus already effected in the electrolysis cell.
The "gas bubble effect" is considerably reduced in this manner and the electrolysis can be carried out with a low cell voltage. The gas space has a device (in practice usually a tube connection) for removing hydrogen and any condensed water.
The higher the current density of the process according to the invention at the cathode, the higher the tendency for a gas cushion to develop. Current densities of at least 500 A/m2, in particular at least 1,000 A/m2, are preferred. An appropriate upper limit for the current density used is not more than 8,000 A/m2, preferably not more than 6,000 A/m2 and in particular not more than 4,000 A/m2. In the process according to the invention, no oxygen or gas containing oxygen should be introduced into the gas space of the cell.
Raney nickel electrodes, in particular those which consist of a nickel network covered at least on one side with a compressed mixture of Raney nickel and polytetrafluoroethylene, have particularly favorable properties as the cathode in the process according to the invention. On the gas side, this Raney nickel electrode can also be coated with a film of polytetrafluoroethylene. Such electrodes are described in German Offenlegungsschrift No. 3,342,969, which is incorporated by reference.
The pressure difference between the catholyte chamber and gas space is about 10 mbar to 0.5 bar, in particular 20 mbar to 0.2 bar (1 mbar=1 hPa).
Since an alkali pressure gradient builds up in a vertical cell, it is advantageous to operate the process in a cell in which the cathode, anode and membrane are arranged horizontally, so that the anode covered by the anolyte lies above the membrane and the cathode covered by the catholyte lies below the cation exchanger membrane and the gas space is located below the porous foil-like cathode. In this design, the same pressure prevails at any point on the cathode. This prevents alkali passing over through the cathode into the "gas space" at points with higher alkali pressures.
The figure shows a diagrammatic cross-section through an electrochemical cell for the electrolysis of aqueous alkali metal chloride solutions which is equipped with a porous foil-like cathode. The cell is divided into an anode chamber (1), a cathode chamber (2) and a gas space (3). Saturated sodium chloride solution, for example, is pumped via a feed line (4) into the anode chamber (1). Chloride ions are discharged to give elemental chlorine at the anode (5). Dimensionally stable anodes of titanium rib meshes or perforated sheets which are activated in order to keep the chlorine excess voltage low are preferably employed. The chlorine formed and the depleted brine leave the anode chamber (1) via line (6). Between the anode chamber (1) and the cathode chamber (2) is the cation exchanger membrane (7), through which sodium ions migrate into the cathode chamber (2).
Water is fed into the cell in the form of deionized water or dilute sodium hydroxide solution via feed line (9). Alkali metal hydroxide solution is formed in the cathode chamber (2) and leaves the cell via the opening (10). The cathode chamber (2) and gas space (3) are separated from one another by the porous foil-like Raney nickel cathode (8). The gas space (3) has an opening (11), through which the hydrogen produced is removed.
As can be seen in the figure, the porous foil-like cathode (8) consists of a support network (13), which is produced from, for example, nickel and at the same time serves to supply the current and distribute the current in the Raney nickel catalyst (14). The cathode can be provided with a thin porous polytetrafluoroethylene coating (15) on the side facing the gas space. This PTFE film is permeable to gas but impermeable to liquid and thus serves to separate the gas from the liquid in the cell. It is not absolutely necessary. If the electrolysis is operated without the said film, however, an increased amount of condensate in the gas space (3) is to be reckoned with.
The pressure difference between the cathode chamber (2) and the gas space is 10-5,000 cm water column (cm WC), in particular 20p14 200 cm WC (1 cm WC=0.98 hPa). In practice, the pressure is established in a simple manner by providing the line (10) with a flow-restrictor valve (12) or extending the line (10) upwards to an overflow such that a defined column of alkali is formed. The gas space is usually operated under atmospheric pressure, that is to say without an increased pressure.
Under the conditions described, more than 90% of the hydrogen formed escape via the gas space.
The invention is illustrated below in more detail with the aid of the figure and the examples.
A 40 cm2 membrane electrolysis cell equipped with an activated titanium anode and a cation exchanger membrane from DU PONT of the Nafion� NX 90209 type was operated with a Raney nickel electrode without a PTFE film on the gas space side according to German Offenlegungsschrift No. 3,342,969 (area 40 cm2) such that the cathode separated a 3 mm deep cathode chamber from a 10 mm deep gas space. The operating conditions of the electrolysis were 80� C., 3 kA/m2, feed brine concentration of 300 g/l, anolyte concentration of 200 g/l and alkali concentration of 33% by weight. The increased pressure of the catholyte was 25-30 mbar (=25-30 hPa), and that of the gas space was 0 mbar, based on the atmosphere. Under these conditions, 99% of the hydrogen produced came from the gas space and only 1% from the cathode chamber. The cell voltage under the conditions described was 3.12 V.
The electrolysis was carried out under the same conditions with the same electrodes and the same cation exchanger membrane as in Example 1, but the gas space was flooded with sodium hydroxide solution. Merely the pressure difference between the cathode chamber and gas space was left at 25-30 cm WC (increased pressure in the cathode chamber). 98% of the gas came from the gas space and 2% from the cathode chamber. At a current density of 3 kA/m2, the cell voltage was 3.15 V.
A 450 cm2 membrane electrolysis cell with an activated titanium anode and a cation exchanger membrane of the Nafion (R)NX 90209 type was equipped with a Raney nickel cathode with PTFE film on the gas space side according to German Offenlegungsschrift No. 3,342,696. The cathode was 9 cm wide and 50 cm long. The electrolysis cell was operated horizontally, so that the anode lay above and the cathode below the cation exchanger membrane. The distance between the cathode and the membrane was about 4 mm here. A coarse-mesh polypropylene network was located in the cathode chamber as a spacer. The sodium hydroxide solution flowed through the cathode chamber in the longitudinal direction. At an operating temperature of 80� C. and a current density of 3 kA/m2, the brine in the cell was depleted from 300 g/l to about 220 g/l, and 33% strength by weight sodium hydroxide solution was produced. Under an increased pressure in the cathode chamber of 150 cm WC, 92% of the hydrogen formed left the cell via the gas space; no production of sodium hydroxide solution in the gas space was observed. Under the conditions stated, the cell voltage was 3.20 V.
The electrolysis was carried out in a 40 cm2 cell under the same conditions as in Example 1, but pressure compensation prevailed between the cathode chamber and gas space. More than 90% of the hydrogen was formed in the cathode chamber and the cell voltage rose rapidly to values above 3.40 V.
|Cited Patent
|Filing date
|Publication date
|Jun 8, 1983
|Dec 18, 1984
|Olin Corporation
|Process of operation of catholyteless membrane electrolytic cell
|Sep 6, 1984
|Jan 7, 1986
|Hoechst Aktiengesellschaft
|Gas diffusion electrode with a hydrophilic covering layer, and process for its production
|Sep 9, 1983
|Mar 28, 1985
|Hoechst Ag
|Gasdiffusionselektrode mit hydrophiler deckschicht und verfahren zu ihrer herstellung
|Nov 28, 1983
|Jun 5, 1985
|Varta Batterie
|Poroese gaselektrode
|Title not available
|Title not available
|Citing Patent
|Filing date
|Publication date
|Jun 5, 1997
|Aug 17, 1999
|Solenzara International Limited
|Electrolytic treatment of aqueous salt solutions
|Jul 30, 2014
|Jan 11, 2017
|Aquahydrex Pty Ltd
|Method and electrochemical cell for managing electrochemical reactions
|U.S. Classification
|205/515, 205/534, 205/531
|International Classification
|Cooperative Classification
|European Classification
|Jan 12, 1987
Owner name: HOECHST AKTIENGESELLSCHAFT, D-6230 FRANKFURT AM MA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:WINSEL, AUGUST;STAAB, RUDOLF;MEDIC, NIKOLAJ;REEL/FRAME:004657/0694;SIGNING DATES FROM 19861209 TO 19861212
Owner name: HOECHST AKTIENGESELLSCHAFT, A CORP. OF GERMANY,GER
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WINSEL, AUGUST;STAAB, RUDOLF;MEDIC, NIKOLAJ;SIGNING DATES FROM 19861209 TO 19861212;REEL/FRAME:004657/0694
|May 18, 1992
|Fee payment
Year of fee payment: 4
|Jul 23, 1996
|Maintenance fee reminder mailed
|Dec 15, 1996
|Lapse for failure to pay maintenance fees
|Feb 25, 1997
|Expired due to failure to pay maintenance fee
Effective date: 19961218


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Allentown, PA Nursing Homes Skilled Nursing Facility
YP - The Real Yellow PagesSM - helps you find the right local businesses to meet your specific needs. Search results are sorted by a combination of factors to give you a set of choices in response to your search criteria. These factors are similar to those you might use to determine which business to select from a local Yellow Pages directory, including proximity to where you are searching, expertise in the specific services or products you need, and comprehensive business information to help evaluate a business's suitability for you. "Preferred" listings, or those with featured website buttons, indicate YP advertisers who directly provide information about their businesses to help consumers make more informed buying decisions. YP advertisers receive higher placement in the default ordering of search results and may appear in sponsored listings on the top, side, or bottom of the search results page.
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1. ManorCare Health Services-West Allen
535 N 17th StAllentown, PA 18104
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1265 S Cedar Crest BlvdAllentown, PA 18103
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5151 Hamilton BlvdAllentown, PA 18106
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881 Marcon Blvd Unit 3700Allentown, PA 18109
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YP - The Real Yellow PagesSM - helps you find the right local businesses to meet your specific needs. Search results are sorted by a combination of factors to give you a set of choices in response to your search criteria. These factors are similar to those you might use to determine which business to select from a local Yellow Pages directory, including proximity to where you are searching, expertise in the specific services or products you need, and comprehensive business information to help evaluate a business's suitability for you. "Preferred" listings, or those with featured website buttons, indicate YP advertisers who directly provide information about their businesses to help consumers make more informed buying decisions. YP advertisers receive higher placement in the default ordering of search results and may appear in sponsored listings on the top, side, or bottom of the search results page.
Nail Salons in Monroeville, PA
1.Bella Nail Salon
1792 Golden Mile Hwy
4.03 mi
Nail SalonsBeauty Salons
Buisness The employees at this salon have no idea how to run a buisness or how to properly treat customers. Making appointments mean nothing to these people and will take any walk in at any time ahead of customers that make appointments. I make appointments because I have better things to do with my time than to sit for hours and wait unlike most of the customers that go there. The employees also act like you are bothering them and they don't evan have the sense to greet customers when they walk in the door. If they are so unhappy maybe they should look into another profession. They are plenty of salons in the area that treat customers the way they should be treated!
2.Fast Nail
3766 William Penn Hwy
0.99 mi
Nail SalonsBeauty Salons
I needed a manicure before a trip and didn't get to schedule it in advance. I called Fast Nails and was able to get a same day appointment. When I arrived, before I sat down in the waiting area, I was whisked to a waiting massage chair. My feet were delecately placed in the sanitized solution and I was watching the Family Feud on the conveniently located TV. The service is clean, professional and fast. Did I say the service was FAST! I meant it. I was done in no time at all. My feet looked and felt wonderful. I would recommend this to all 1st timers and friends. It's not that big, but they do a nice job of managing their clients through the process and you get your monies worth.
3.Pittsburgh Nails
4021 William Penn Hwy
1.49 mi
Nail SalonsBeauty SalonsDay Spas
Full service salon
4.Lady Nails
230 Center Rd
1.68 mi
Nail SalonsBeauty Salons
5.Elite Nail Spa
145 Mall Circle Dr
0.72 mi
Nail SalonsBeauty Salons
6.Lovely Nail Spa
4303 Northern Pike
1.92 mi
Nail SalonsBeauty SalonsHair Stylists
I highly recommend Lovely Nail Spa. Ive been a customer for years and I always get perfection. Staff is polite and artistic. Be is always polite and has a great personality.
7.Venetian Nail Spa
233 Monroeville Mall
0.71 mi
Nail Salons
8.First Nail
218 Center Rd
1.63 mi
Nail Salons
9.East Coast Salon Services
2644 Mosside Blvd Ste 102
1.98 mi
Nail SalonsBeauty SalonsBeauty Salon Equipment & SuppliesDay Spas
10.T & T Nails
4520 Broadway Blvd
2.37 mi
Nail SalonsBeauty Salons
11.Classic Look
275 Center Rd Ste 3
1.74 mi
Nail SalonsBeauty Salons
We can cover all your beauty needs from head to toe and everywhere in between. We offer a full range of services in hair, nails and waxing. We are Located in Monroeville PA and we are open Monday through Saturday and we offer evening hours by appointment.
12.Phalanges Unlimited
4372 Old William Penn Hwy
1.75 mi
Nail SalonsBeauty Salons
13.90's Nails
258 Monroeville Mall
0.68 mi
Nail SalonsBeauty Salons
Very nasty people!!!! The male that works there has a very nasty attitude he doesn't do a good job he did my nails on sunday (march 2, 2015 and 2 nails popped off the next day i go to get them fixed not by the same person and this lady has an even nastier attitude yanking my hand towards her kept knicking my cuticle and wouldn't say sorry and was angry when i told her!!! Then my baby had to use the bathroom and they wouldn't let her use it!!! The whole time i was there they were just nasty!!! I will never go back!!! If your smart you wouldn't either!!!
14.L & C Nail Spa
3747 William Penn Hwy Ste C
0.99 mi
Nail SalonsBeauty Salons
15.Salon De Matteo
2502 Monroeville Blvd
0.35 mi
Nail SalonsBeauty SalonsHair Stylists
16.90's Nails
MONROEVILLE Blvd
Nail Salons
17.Paris Nail Spa
4280 Northern Pike
1.88 mi
Nail SalonsBeauty Salons
18.Legacy The Salon
4366 Old William Penn Hwy
1.73 mi
Nail SalonsBeauty Salons
19.Hair Dynamics
3840 Beatty Ct
4.36 mi
Nail SalonsHealth ResortsHair StylistsSkin Care
Offering coloring and highlighting, texture services, cutting and styling, manicures, pedicures, nail overlay systems, facial waxing, and up-hair designs. We also sell brushes, irons & jewelry.
20.Alfredo's Salon of Hair Design
1 Racquet Ln
0.74 mi
Beauty SalonsNail Salons
The finest in hair and nail care.
21.Trade Secret
245 Monroeville Mall
0.76 mi
Beauty SalonsNail SalonsCosmetics & PerfumesBeauty Supplies & Equipment
22.Uforia Hair Salon & Spa
288 Saint Martins Dr
1.98 mi
Beauty SalonsDay SpasHair RemovalMassage Therapists
John. You rock!!! Spot on with color and cut. It is so refreshing to walk into a salon where the atmosphere is friendly and so relaxing. The staff is wonderful and so nice to chat with the clients too. Always a delightful experience. Thank you John!
23.Philip Pelusi Hair Salons
200 Mall Blvd
0.79 mi
CosmetologistsDay SpasNail SalonsMake-Up Artists
I had not gotten my hair cut in a while, and I did not want to pay a ridiculous amount to get my hair cut and styled. I do not dye my hair or get highlights etc., I just wanted a good haircut. I called around to many salons in my area (Shadyside) and was repeatedly quoted the base price of $55 and up, even more at some salons. This was too much for me so I went online to search the tutorial scene and make an attempt to cut my own hair. I thought no problem, I'll save time and money. Ladies, this is a bad idea. Do not try to cut your hair. I screwed up, as can be expected, and then I was in a real bind, now I had to get my hair cut because I had cut a large piece out of the front in an attempt at side bangs. My calling began again and I decided to try salons in Monroeville this time. My roommate had gotten her hair dyed and cut (she dies her brown hair blonde) at the Philip Pelusi downtown with great results, so I decided to try the Philip Pelusi at Monroeville Mall and they quoted me $25 and up, so I scheduled an appointment FOR THE SAME DAY!. This was excellent because when you screw up your hair you do not want to waste any time trying to get it back to presentable. I arrived 5 minutes before my scheduled time and they took me right away. At some salons I have gotten there on time and still had to wait for my appointment, which I think everyone hates. I explained my ridiculous situation and Brian was very personable and understanding! I was afraid I was going to get a condescending stylist who would make me feel stupid for my mistake, but no, it was funny and he laughed and reassured me that it could be fixed. Actually several people in the salon got involved in the conversation creating a cool and comfortable atmosphere where customers and stylists were interacting with each other instead of all silence and sitting in wait for the reveal and the price point. Well after some friendly joking and an enjoyable conversation about previous how-to mishaps, my haircut was underway. Brian explained to me how to really cut bangs, and why it is so difficult to do on your own. He showed me how they blend the bang in with the lower layers to create a great layered look. I was really satisfied with my haircut. It looked great in the end, and you couldn't even tell that I had messed it up before coming to the salon. He told me that there was a minor issue with my attempt at cutting which left a small ""hole in the bang"" but that it would grow out and fall in place (whatever, I didn't notice any holes!). I was very pleased with Brian and his expertise. The one thing I can say I wasn't enthralled with was the finishing touches. He blow-dried my hair with a round brush to curl it under a bit, but that was it. I spend a lot of time on my hair each day straightening, curling under, spiral curling, so the"" just blow dried"" look seemed unpolished to me. I wish he would have used a curling iron on it. The iron just gives it a shinier finish and better definition in my opinion. However, I didn't ask him to do this and it might have been an extra cost to have him actually style it in the salon. I didn't have any big plans after so it wasn't a big deal, when I got home and styled it myself it looked great and I was 20% happier with the final look! The price ended up being $35 dollars before tip. NOT BAD! I have paid that much for haircuts before and been about 35x less satisfied. I highly recommend Brian, he is great! I also highly recommend Philip Pelusi in Monroeville Mall. I even got to do a little shopping before the appointment which is a great added bonus.
24.Megan's Loft...a hair and nail studio
1670 Golden Mile Hwy Ste 200
3.90 mi
Hair StylistsBeauty SalonsNail Salons
I had my hair cut and colored and I love it!!! I have never had so many people tell me they love my hair!!! Thank you Megan's loft!!! I'll be back ;) would recommend to everyone
25.Cammuso's Hair Salon
1788 Golden Mile Hwy
4.03 mi
Beauty SalonsWigs & Hair PiecesBarbersDay Spas
Got an excellent mani/pedi from Courtney. Gel mani and regular pedi still looks perfect a week later. Reasonably priced, friendly, and professional. Clean, pleasant, comfortable surroundings. Going back for a hair cut today. I'm thrilled that my favorite stylist, Darla, has just joined the team.
26.Resolutions Med Spa
4713 Northern Pike
3.09 mi
Day SpasBeauty SalonsMedical SpasCosmetologists
Our highly trained and qualified therapists offer a full range of professional treatments and advice on all up to date techniques in a pristine and hygienic salon situated in the grounds of a lovely country house. We offer many elegant services and invite you to come try them all. Please contact us for any questions regarding appointment times or questions about our services. Our medical day spa offers traditional spa services such as massages, facials, manicures, pedicures, spray tanning's and waxing candling. Our medical services include permanent hair removal, spider vein therapy, laser teeth whitening in less than 1 hour take home bleaching trays with nite brite or daybrite and permanent make-up, eyelash extensions. Micro-dermabrasion and glycolic peels are also available.
27.Bella Capelli Academy Monroeville, a Paul Mitchell Partner School
151 Wyngate Dr
0.88 mi
Beauty SchoolsBarbersNail SalonsIndustrial, Technical & Trade Schools
28.Reflections Styling Studio
2685 Stroschein Rd
1.23 mi
Beauty SalonsNail Salons
29.Zegarelli's Hair Exsalonce Inc
3940 Monroeville Blvd Ste 1
1.23 mi
Hair ReplacementHair RemovalBeauty SalonsNail Salons
30.Looks Hair Nails & Tanning
50 Seco Rd
2.28 mi
Beauty SalonsTanning SalonsNail SalonsHair Stylists
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Black linen sari with purple herringbone border
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Wednesday, August 21, 2013
Green Drinks will be held Sept. 11 at Cody Orchards Farm Stand, 3475 Graves Road in Odell, from 6-7:30 p.m. Cost is $5 suggested donation (free to current GO! members).
Green Drinks is an event of the Gorge Owned Business Network, a newly formed project of the Columbia Gorge Earth Center. GO! aims to advance Gorge-owned businesses with a commitment to a sustainable and prosperous community.
The event moves around the Gorge every month to a new town and a new bar or business and is held with two goals in mind: Provide valuable information for people working in sustainable industries and provide an opportunity for residents, business owners, government and others from around the Gorge to get together once a month in a fun atmosphere.
If you have an idea or would like to organize a Gorge Green Drinks event, contact email@example.com.
Gorge Green Drinks is entirely run by volunteers. If you are interested in helping plan future events, contact: firstname.lastname@example.com.
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Sugar Mummy Needs Loving
There should be something you should understand about me. I am a straight forward person. I really don't enjoy thinking about who to make everything sound nice. i tell things exactly as they are and although I am patience to understand excuses, I am not patient when they are too much and too many.
I am Adaobi, and I live in Abuja. I own a business there and I get to travel within and outside Nigeria. I am 49 years old. I am looking for a young and serious boy friend. I have to be very strong and submissive. He will go where ever I want him to go, with or without me and he must be a fun-loving and out going person. I need that so much in my life.
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Stearman: Whirlwind Six Months at Wolves
Saturday, 2nd Feb 2013 06:02
Richard Stearman has reflected on a topsy-turvy time in his career that has seen him join Ipswich on loan for the remainder of the season.
The 25-year-old defender said: "I was hopeful that I would get to play a bit more at Wolves in the past couple of months but I realised I needed to get out and maybe get some games under my belt to improve my match fitness.
"When I heard it was Ipswich and my old gaffer, Mick McCarthy, who were interested I jumped at the opportunity.
"It has been a bit of a whirlwind year, or at least six months, at Wolves I suppose. They are towards the wrong end of the table from where they expected to be and a new manager has come in and gone.
"I think they've got a little bit of a hangover from the Premiership relegation, so fingers crossed they can turn it round and climb the table, as I hope Ipswich do as well."
Apart from McCarthy and his assistant, Terry Connor, Stearman said he knows several members of the Portman Road playing squad.
He added: "I was with Frank [Nouble] at Wolves, played with Lee [Martin] for England and generally you get to know players from playing against each other. When I walked into the dressing room I saw a lot of friendly and familiar faces.
"Ipswich is a massive club with a great fan base and whenever I've played here it's always been a great atmosphere. It's a great set-up here and hopefully I'll enjoy my time."
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On a Wing and a Prayer by minesapint
Many TWTD users are convinced that Mick is a tactical troglodyte uninterested in attractive, attacking football and happy to grind out a bore draw even at Portman Road.
Three Players Town Should Sign by bluecobblers
It is obvious for anyone that has watched Ipswich Town play this season that our squad lacks the quality and cutting edge that teams above us possess.
McCarthy - Ready for Season After a Disappointing Holiday. by monty_radio
Flight crew announced at just before 2pm, same old; same old! Anyway, supped up and went off to check in. Several armed guys stood about, but was told it was to keep people in, not out. Nipped up for a coffee, but queue would have meant the flight would have started before I got served.
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Well this horrendous season is now officially over and it is one that I know I and many supporters will want to forget very quickly.
There is Something to Be Excited About! by LFBNITFC12
The majority of our fans seem to think that with Mick McCarthy in and Marcus Evans in control next season will only go one way... badly! However, from my ever positive view of my club, Ipswich Town, I'm predicting a lot more from the 2017/18 season.
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text: Recipe# 1081629 Oct 01 Fruit Salsa- Speckled Sweet Pizza Pie by dnemana No reviews # u sure are going to enjoy it!!!!!!!# this combination of fresh fruits and cheese on pizza crust is a wonderful way to start a party nicely.# can serve it as a snack or as a dessert....# keep the warm water at 105-115 degrees for the pizza dough.# additional garnishes may include ch .... Add to Cookbook Upload a Photo View Reviews Received Recipe #10816 Fruit Salsa- Speckled Sweet Pizza Pie You are not signed in. To add recipes to your cookbooks requires you to Sign In to your account Select the cookbook to add this recipe to Not signed in My Page My Recipes My Photos My Cookbooks My Reviews My Reviews Received


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Today's Devotional
Passing ByWhen have you needed someone to come to your aid?
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i am recovering from a massive stroke that happened on Oct.21,2008, and I would really like to go back to work. I am an RN, but i still can't use my left hand due to paralysis from the stroke. I am closer to God than i have ever been since this happened to me. I knew I was going to have to choose either being mad at God for what happened or draw closer, and I'm so glad that I chose to draw closer. I have felt love like I never had before.


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Heather Mason Heather Mason, 46, died 2-19-17. She's survived by her husband, Matt Mason, 1990 HPHS graduate. For more information and to read the full obituary call Toynton's Walworth Funeral Home at 262-275-2171 or... (legacy.com)
Allene is survived by her children, Jimmie (Cheryl) Haws, West Valley City; Kim (Bill) Dean, Rockland, Idaho; Kerlyn J Haws; Jason R. (Cathryn) Haws, all Torrey; nine grandchildren and 16 great-grandchildren; brother, Carl James Osborn. Also preceded in ... (The Richfield Reaper)
Paul Arthur Brockmeier, of Salina, passed away Feb. 21, 2017 at his home. He was born Jan. 13, 1936 in Hope, Kansas, the son of Theodore and Freda (Lueker) Brockmeier. Paul worked for Exlines, Inc. for 28 years. He married Dorothy L. Newman on August 4 ... (KSAL)
Thanks to the move, he met his teenage sweetheart, and fellow Eagle Pass transplant, Tules Contreras; they were married on July 21 of 1968 in Payette, Idaho. Soon after their marriage, they continued working as migrant laborers throughout Oregon and ... (The Argus Observer)
Kay Rusche, the wife of former Idaho House Rep. and Democratic minority leader John ... from his minority leader responsibilities during the session to care for her. An obituary will follow. (Idaho Statesman)
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North korea sanctions
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North Korea threatens South over UN sanctions
Trump of Big Conflict about North Korea||Breaking News||South Korea North Korea issue Trump of Big Conflict about North Korea||Breaking News||South Korea North Korea issue US President Donald Trump has indicated that there might be a major conflict with North Korea. He said diplomatic efforts will be more in the solution to the crisis over the country's nuclear and missile programs. 100 days before the trump to take oath on Saturday. On this occasion Trump said in a special interview to…
Women with ovarian cancer may have somewhat better survival odds when they feel emotionally supported by family and friends, a new study suggests.
North Koreas intransigence has forced U.S. and UK to give conditions for peaceful resolution of the ongoing conflict over nuclear threats. The two countries gave the conditions at a high-level meeting on North Korea attended by Ministers of Foreign Affairs of the 15-Member UN Security Council on Friday in New York. This was just as North Korea reportedly launched another missile test on Friday as a Security Councils meeting chaired by the U.S. got underway at the UN. The high-level…
North Korea faces tighter sanctions under Trump strategy
North Korea faces tighter sanctions under Trump strategy - BBC News
North Korea says U.S. bomber flights push peninsula to brink of nuclear war. North Korea accused the United States on Tuesday of pushing the Korean peninsula to the brink of nuclear war after a pair of strategic U.S. bombers flew training drills with the South Korean and Japanese air forces in another show of strength. The two supersonic B-1B Lancer bombers were deployed amid rising tensions over North Korea's pursuit of its nuclear and missile programs in defiance of United Nations…
U.S., China talk firmer U.N. response to North Korea's missiles The United States is negotiating with China on a possible stronger U.N. Security Council response – such as sanctions – to North Korea's repeated ballistic missile launches, which the 15-member body normally condemns in a statement, diplomats said. It was not immediately clear... http://conservativeread.com/u-s-china-talk-firmer-u-n-response-to-north-koreas-missiles/
#world #news U.S. House may vote within days on tighter North Korea sanctions
North Korea,Secretary,Solution,Left,Military


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Add Skype for Business as a Location
My business is using exclusively Skype for Business for customer support. It would be very helpful to have Skype for Business integrated to Bookings.
5 comments
Pedro Aguiar commented
Yes! and create a meeting url!
Kamber Devjianie commented
Having skype for business in location and then it automatically creates a meeting link and sends it to the client in the invite would be awesome
Kelsey Creveling commented
and integration with UberConference please.
Daniel Behar commented
Allow for Video Appointments with Skype (Sync with Skype)
Anonymous commented
over 60% of my clients are in other provinces and countries - I need this along with the integration with my calendar - I have more flexibility with timetrade.com than this allows.


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Ramada Coquitlam, Coquitlam
- Free WiFi and free parking
Main amenities
- 84 guestrooms
- Restaurant and bar/lounge
- Indoor pool
- Breakfast available
- Fitness center
- Business center
- 24-hour front desk
- Air conditioning
- Computer station
- Front desk safe
- Laundry service
- Meeting room
For families
- Free cribs/infant beds
- Rollaway/extra beds available
- Microwave
- Refrigerator
- Connecting/adjoining rooms available
- Private bathroom
What's around
- Lougheed Town Centre (0.8 mi / 1.2 km)
- Queens Park (3 mi / 4.8 km)
- Simon Fraser University (5.8 mi / 9.3 km)
- Metropolis at Metrotown (6.9 mi / 11.1 km)
- Massey Theatre (3.4 mi / 5.5 km)
Ramada Coquitlam, Coquitlam
Hotel Info: 855-239-9225from $86
- Suite, 1 King Bed
- Suite, 2 Queen Beds
- Suite, 1 Queen Bed
- Standard Room, 2 Queen Beds
- Standard Room, 1 Queen Bed
- Standard Room, 1 King Bed
- Room, 2 Queen Beds, Accessible
- Suite, 1 King Bed
More great choices
At a glance
Key facts
Hotel size
- This hotel has 84 rooms
- This hotel is arranged over 2 floors
- Check-in time 3 PM-1 AM
- Check-out time is 11 AM
Required at check in
- Credit card deposit required
- Government-issued photo ID required
Travelling with others
- Up to 3 children (17 years old and younger) stay free when occupying the parent or guardian's room, using existing bedding
- Specific rooms only, restrictions apply *
- 2 per room
- Pets allowed *
Extra people
- Roll-away beds available, charges may apply*
- Free WiFi in public areas
- Free WiFi in rooms
- Free self parking
- Free RV/bus/truck parking
Nearby Two Star Coquitlam hotels
In the hotel
- Cooked-to-order breakfast (surcharge)
- Restaurant
- Bar/lounge
- Room service (during limited hours)
- Indoor pool
- Fitness facilities
- Spa tub
- Golfing nearby
- Business center
- Conference space size (feet) - 1428
- Conference space size (meters) - 133
- One meeting room
- Computer station
- 24-hour front desk
- Dry cleaning/laundry service
- Laundry facilities
- Free newspapers in lobby
- Number of buildings/towers - 1
- Safe-deposit box at front desk
In the room
- In-room climate control (air conditioning)
- Air conditioning
- Coffee/tea maker
- Iron/ironing board
- Blackout drapes/curtains
- Private bathroom
- Shower/tub combination
- Free toiletries
- Hair dryer
- Cable TV channels
- Desk
- Free WiFi
- Free local calls
- Refrigerator
- Microwave
- Connecting/adjoining rooms available
- Access via exterior corridors
Top Coquitlam hotels
Recently reviewed hotels in Coquitlam
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"Sean, at the desk, was extremely helpful. The room fit perfectly our needs, clean with just enough furniture. It is a very quiet hotel. Its location is a short distance from…"May 21, 2017
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Also popular with travelers from the USA
Special features
DiningChar631 Modern Steakhouse - This restaurant serves breakfast, lunch, and dinner. Guests can enjoy drinks at the bar. Open daily.
Ramada Coquitlam, Coquitlam's small print
Also known as
- Coquitlam Ramada
- Ramada Coquitlam
- Ramada Hotel Coquitlam
- Ramada Coquitlam Hotel Coquitlam
- Ramada Coquitlam Hotel
The property has connecting/adjoining rooms, which are subject to availability and can be requested by contacting the property using the number on the booking confirmation.
Pet-friendly rooms can be requested by contacting the property at the number on the booking confirmation.
Optional extras
Breakfast costs between CAD 9 and CAD 15 per person (approximately)
Pets are allowed for an extra charge of CAD 20 per pet, per night
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.
Is the description of this hotel not correct? Tell us


text:
- Information
- Community
- Membership
- Publications
- Groups
- Events
- Contact
Professor Chattopadhyay is visiting from India and participating in this year's Four Corners Tour. He will be speaking on approaches to teaching writing for EFL learners. We are welcoming a mix of students and teachers from local colleges and are looking forward to an interesting evening.
Theme by Danetsoft and Danang Probo Sayekti inspired by Maksimer


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|Property type
|Minimum Stay
|2 nights
Clark's Little House is a detached, private cottage in a country setting one-and-one-half miles east of Sonoma Plaza and near several wineries.
The cottage features over 380 square feet of living space plus a 200-square-foot, private, redwood deck. The bedroom has a queen-size bed and the living area includes a pull-out twin. Both have many antiques, crown moldings, cottage windows, ceiling fans, natural gas fireplace, three sets of French doors, and hardwood floors. The bath has a claw-foot tub, a separate shower, and a marble and granite floor.
A private tennis court is on the property and available to guests.
Keywords: Cottage
What a wonderful place to spend an "old friends" reunion. You are fantastic hosts, and the cottage is such a gem! We enjoyed our time here immensely. We thank you for everything!!
We tried to fit Ziggy in our suitcases but she just wouldn't fit. She's a sweet girl and we'll miss her!
Thanks again. This won't be the last you see of us!
This was a very quaint little cottage that is very close to the Sonoma square. We came for a girls weekend and it was perfect. We really enjoyed our time in wine country without spending all of our money on a hotel room. Would definitely book again and highly recommend it.
A lovely cottage with beautiful outdoor spaces. The cottage itself had all the necessities as well as plenty of information (books, etc.) about Napa & Sonoma. Linda even suited the cottage with extra perks such as coffee and a welcome bottle of wine:) The bed was very comfortable with a super cozy duvet. Also, it was adorned with appealing antiques and tasteful hardware. We hope to stay again sometime and hopefully on a future visit we'll be able to meet.
Location, location, location. So quiet and just minutes from the square. Linda is so wonderful to work with and was a huge help.
Linda's place is great for a weekend getaway. Perfectly located with ease of access to town and outlying areas. A small, cozy cottage with lots of natural light and French doors leading to a little deck - perfect for sitting outside. Thank you Linda!
While travelling with my parents for a wine trip to California, I convinced them to try a rental instead of a hotel and found this adorable cottage. Located in Sonoma about a mile from the square, it was close to everything, had all the amenities I look for when travelling, a way to cook, coffee maker, outdoor space, refrigerator, wifi. We booked after talking to the owner, who was quick to answer questions and very accommodating. We plugged the address into GPS and found it with no problems, parked by the tennis courts and followed the path to a beautiful little cottage with a front porch and covered little court, through french doors into the living area where a bottle of wine and fresh flowers awaited on the table. French doors opened out onto a deck that was almost as large as the house with a table and chairs and comfortable chaise lounges under a pergola roof covered in grape vines. A second set of french doors, complete with screens opened off of the bedroom, with a large bathroom complete with shower stall and deep claw foot tub for a nice soak. The house is beautifully furnished with antiques and interesting pieces. The beds were very comfortable, my parents actually gave up a night in one of the winery guest houses to come back to the cottage because the bed was more comfortable. The main area has a twin size pull out couch that was comfortable as well, where I slept when my parents were at the cottage. We used the grill to make steaks and have a couple friends over one night on the large deck.
The owner was so helpful, provided extra towels when we needed them, answered e-mails quickly while we were there, and stopped to make sure everything was okay.
The price was so reasonable, it could easily rent for more and I am thankful we got the chance to stay here. If we return to Sonoma, I would definitely rent again. We told everyone that asked us where we were staying about this wonderful cottage and the owners, and I wish I could give it more stars. It was a truly great find and made our trip so much more enjoyable. Coffee on the deck in the morning while we checked e-mail and checked in at work, which by the way, wifi was great, strong, and had no problem with three or more devices running at once.
If you get the chance, rent this adorable cottage and relax!
My best friend and I rented this adorable cottage when we ran the Napa Sonoma half marathon together, and it was perfect for us and our needs. Nice chaises to lounge on after a hard morning of running and wine tasting, beautiful flowers and garden areas, and all around a great find. Thank you Linda!
Located one and one half miles south east of Sonoma Plaza.
|Rate Period
|Weekend Night
My Standard Rate
2 night minimum stay
|Notes: Rates are based on 2 guests; add $25 per night, per additional guest
|Tax Rate
One night rental fee for deposit, balance in cash or check while at the property.


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Folded down: 24cm(W) x 62cm(H)
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