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text: Brock Huard Brock Huard joined Ted Johnson and Brien Straw on Radio Row. He thinks Teddy Bridgewater is a really good candidate for the Texans and Bill O'Brien. Huard thinks the Seahawks defense has the advantage over the Broncos offense in the Super Bowl. He gave his predictions for the Super Bowl. Ted JohnsonMore from Ted JohnsonComments One Comment Ayana Rashed says: January 30, 2014 at 7:15 pm Reblogged this on Imarashed. Reply | Report comment | Leave a Reply Cancel reply Enter your comment here... Please log in using one of these methods to post your comment: Email (required) (Address never made public) Name (required) Website You are commenting using your Twitter account. ( Log Out / Change ) You are commenting using your Facebook account. ( Log Out / Change ) You are commenting using your Google+ account. ( Log Out / Change ) Cancel Connecting to %s Notify me of new comments via email. Notify me of new posts via email. More From CBS Houston 6-10s CalendarWatch Now: Live Video & Video Highlights Listen Live AM/FM Stations Sports Radio 610 Sports Radio 650 95.7 The Spot The Bull 100.3 Mix 96.5 Mega 101 FM Featured Shows & Multimedia Play.It Watch in The Loop CBS Sports Radio Radio.com Advertise On Our Streams

subset: commoncrawl


text:
|Publication number
|Publication type
|Publication date
|Dec 30, 1975
|Filing date
|Jan 12, 1973
|Priority date
|Jan 12, 1973
|Also published as
|Publication number
|Uryon S Davidson, Administrator By Amil J Ajamie, James B Price
|Original Assignee
|Motorola Inc
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (3), Referenced by (17), Classifications (39)
|External Links: USPTO, USPTO Assignment, Espacenet
United States Patent Davidson, deceased et al.
1 1 Dec. 30, 1975 [54] FABRICATION OF MONOCRIPTALLINE SILICON ON INSULATING SUBSTRATES UTILIZING SELECTIVE ETCHING AND DEPOSITION TECHNIQUES Inventors: Uryon S. Davidson, deceased, late of Scottsdale, Ariz.; by Amil J. Ajamie, administrator; James B. Price, both of Phoenix, Ariz.
Assignee: Motorola, Inc., Chicago, Ill.
Filed: Jan. 12, 1973 Appl. No.: 323,011
[52] US. Cl. 148/175; 29/577; 29/580; 156/7; 156/17; 357/4; 357/49; 357/60,.357/90 Int. Cl- I'IOIL 21/20; H01L 21/306; H01L 21/76 Field of Search 148/174, 175; 117/201, 117/212; 156/17, 7; 317/235 E, 235 F,
[56] References Cited Primary Examinerl Dewayne Rutledge Assistant Examiner-W. G. Saba Attorney, Agent, or Firm-Harry M. Weiss; Maurice J.
l Jones, Jr.
[5 7] ABSTRACT The methods result in starting material on substrates in which dielectrically isolated integrated circuits, each including a plurality of active devices having substantial gains at high frequencies and small geometries, can be manufactured. One method utilizes a silicon wafer having a [100] crystallographic orientation, on which a P+ layer is formed. This P-llayer has an exposed high concentration surface and a relatively low concentration surface interfacing the wafer. A first insulating material is then formed on the high concentration surface and a first supporting material is formed on the insulating material. The P+ layer provides an etch retardant for an anisotropic etch which removes much of the wafer to expose a substantially planar P+ surface of relatively low concentration on which a thin layer of high quality monocrystalline silicon is epitaxially formed. If a P+ buried layer is not desired, then the process is continued by providing a second insulating layer on the epitaxial silicon with a second supporting material thereon. Next, the first supporting material, first insulating layer and the P+ layer are removed to provide starting material which does not have a P+ buried layer therein.
14 Claims, 14 Drawing Figures Dec. 30, 1975 Sheet 1 of2 3,929,52
FABRICATION OF MONOCRIPTALLINE SILICON ON INSULATING SUBSTRATES UTILIZING SELECTIVE ETCIIING AND DEPOSITION TECHNIQUES CROSS REFERENCE TO RELATED APPLICATION This application is related to the application entitled, Thin Single Crystal Silicon on an Insulating Substrate and Improved Dielectric Isolation Processing Method, of Robert G. Hays and Chongkook Rhee, Ser. No. l7l,453, filed Aug. 13, 1971 and assigned to the same assignee as the subject invention.
This application issued on Mar. 20, 1973 as U.S. Pat. No. 3,721,588.
BACKGROUND OF THE INVENTION Monolithic integrated circuits have low cost, high reliability and other characteristics which make them desirable for replacing many circuits previously provided in discrete form. Such integrated circuits generally include a plurality of circuit components which must be electrically isolated from each other. In the past, this isolation has been accomplished by forming the peripheral material of each component from semiconductor material of a first conductivity type which is surrounded by semiconductor material of a second conductivity type to provide a P-N junction which is reverse biased to provide isolation. However, a capacitor is formed by each of these reverse biased isolation junctions which tends to undesirably reduce the high frequency response of such integrated circuits. Moreover, in an irradiated environment, there P-N isolation junctions tend to function as generators of undesired photocurrents. Thus, to provide integrated circuits including isolated bipolar or field effect devices having fast switching times, high frequency responses and increased radiation immunity, techniques have been developed which locate resistive or dielectric materials between the individual components of each integrated circuit rather than the P-N isolation junctions.
Each of these prior art dielectric isolation processes have problems associated with them. For instance, some of these processes require a plurality of steps including mask alignments, etches and depositions of various materials to form a starting material or substrate, which makes them tedius, costly and time consuming. Others of these processes, which are more simple and direct, involve the hetero-epitaxial growth of monocrystalline silicon directly on an insulating substrate such as sapphire (aluminum oxide) or spinel (aluminum magnesium oxide). Because of the dissimilarities in crystalline arrangement between such nonsilicon substrates and silicon, it is difficult to grow thin layers of monocrystalline silicon having uniform thicknesses on such substrates of sufficiently high quality to serve as a starting material in which active devices having state-of-the-art frequency and switching responses can be fabricated. This is because the crystalline lattice of the silicon attempts to conform to that of the foregoing aluminum oxide substrates causing internal stresses in the silicon at the interface and because the aluminum tends to diffuse into the silicon. Also, since the temperature coefficients of expansion for aluminum oxides and silicon differ, stresses'are created at the interface in response to extreme temperatures which also have a deleterious effect on the molecular arrangement of the silicon.
Furthermore, it is difficult to provide aninsulating substrate of uniform thickness having a sufficiently planar surface to facilitate the growth of thin layers of high quality monocrystalline silicon suitable for high density device fabrication. This is partly because of the mechanical tolerances involved in the machinery used for grinding and-polishing such surfaces. Although the problem of providing a sufficiently planar surface is partly solved by the etch stop process disclosed by the aforementioned related application, that process indicates that the monocrystalline silicon layer be grown on a rather heavily doped, P+ silicon layer, which in some instances can cause undesirable effects on the crystalline quality of the silicon abutting the doped layer. More particularly, fluctuations in the diffusion process forming the boron doped, -P+ surface can cause the amount of boron being applied to the silicon to exceed the solid solubility limit so that boron silicide is precipitated on the surface on which the epitaxial layer is grown. Also, because the process of the related application requires subsequent steps before and after the epitaxial layer is formed to complete the starting material, it is possible for undesirable out-diffusion to occur into the epitaxial layer from the P+ layer and for the handling to injure the epitaxial layer. Hence, although the process of the related application is suitable for providing relatively high quality silicon on an insulating substrate as compared to silicon on either sapphire or spinel, there are applications where still higher quality epitaxial silicon on an insulating substrate is desirable.
Defects in the crystalline structure of silicon grown on either non-silicon surfaces or on highly doped silicon surfaces have deleteriouseffects on the electrical characteristics of active devices fabricated therefrom. For instance such imperfections provide charge carriers at forbidden energy levels which cause excess leakage currents in response to reverse voltages to result in increased device power dissipation without contributing to amplification capability. Moreover, crystalline lattice imperfections may create recombination centers which decrease the current gain of bipolar transistors and deflect carriers passing through the lattice to thereby decrease carrier mobility with a resulting undesired decrease in high frequency response. To compensate for either the non-planarity of the substrate surface on which single crystalline silicon is formed or the imperfections in crystal lattice at the interface therebetween, or both, it is sometimes necessary to provide an undesirably thick layer of monocrystalline silicon which may result in devices having large capacitances which further decrease their high frequency responses.
SUMMARY OF THE INVENTION One object of this invention is to provide a method of manufacture whereby a layer of monocrystalline silicon having a high degree of crystalline integrity is provided on an insulating substrate. 7
Another object is to provide a method of manufacture facilitating the formation of a thin layer of monocrystalline silicon of controlled thickness which has a planar surface.
Still another object is to provide a starting material or substrate for the manufacture of dielectrically isolated monolithic integrated circuit including a high density of active devices having improved high frequency responses, switching characteristics and immunity to radiation. I
A further object is to provide a meth'od-;-of manufacture, for starting material in-which integrated'circuits can be formed, which method utilizes aself lim'iting etch process-and-wherein siliconfsemiconducto'r."mater rial. is grown on a'siliconsurface-Whichdoes nothave to be as heavily doped as in someprior art methods.
A still further object is to-provide a method-of manufacture of a structure including a thinlayer of epitaxial, monocrystalline silicon on an insulating .substrate whereby the epitaxial silicon is depositedon-a freshly cleaned surface and whereby, in one embodiment, process steps subsequent to the formation of theepitaxial silicon are not required to completethe starting material.
In brief, the methods of the invention each providea thin layer of high quality monocrystalline, silicon on an insulating substrate which is suitable for ;use as a starting material for the manufacture of monolithic integrated circuits including high density, dielectrically isolated bipolar or field effectdevices having substantial gains at high frequencies. One method includes-the steps of providing a planarized silicon wafer having a predetermined crystallographic orientation, and diffusing or epitaxially growing a P+ layer which has a low impurity concentration surface either included .in or adjoining the wafer and an exposed higher impurity concentration surface. Next, a first insulating layer is provided on the exposed high concentration surface, and a first supporting material is formed thereonl Then, the silicon substrate is subjected to ananisotropicetchant which removes the silicon at least to the low "concentration surface of the P+ layer, which acts as an etch stop or retardant and tends to provide apianar surface. The high quality monocrystalline silicon layer is epitaxially grown or deposited on the planar surface to complete a starting material for devices having P+ buried layers provided by the P+ etch 'stop layer.
If buried layers are not desired, the above process can be extended by providing a further insulating layer on the exposed surface of the epitaxial silicon and further supporting material thereon. Then'thefirst supporting material, the first insulating material, andthe P+ layer are removed to expose the previously buried surface of the epitaxial layer. Hence, another starting material is thereby provided by the above additional process steps which is suitable for supporting the fabrication of monolithic integrated 'circuits'having dielectrically isolated devices which do not require P+ buried layers. l
BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 through 8- illustrate successive structures formed during one process of the invention whereby a starting material is provided which includes a thin layer of high qualityrnonocrystalline silicon over aninsulating substrate with a P+ buried layer therebetween; and
FIGS. 9 through 14 depict further successive-structures formed by additional processing steps-utilized to convert-"the starting material of FIG; 8"into a starting material which does not include a P-l-' buried layer.
. I EMBODIMENT. r. i;
FIGS. 1 through8 inclusive, which are not drawn to scale, illustrate one embodiment of the method of the invention whereby a thin layer of monoerystalline-silicon having a high degree of crystalline integrity, precisely controlled thickness and resistivity, and a-planar surface is provided on an insulating substrate. In FIG.
' 1; a substrate'or wafer 10 is shown which may be of a ciystallograpli'ic orientation and a thickness, on the ord-efi'o-r 'zo i ns, sufficient to provide mechanical support for subsequent handling. According to usual practice substrate 10 may be circular in shape, having a diameter on the order of 2 inches, and it may be slightly N dopednKnown planarization techniques are employed to reduce the variation in thickness of silicon wafer l0 to lessthan one tenth of a thousandth of an inch (mil) so that the bottom and top surfaces thereof lie in substantially parallel planes.
Next, a thin layer of insulating material such as silicon dioxide or silicon nitride 12, which may have a thickness on the order of 10 thousand angstroms, is provided on the surfaces. of wafer 10, as illustrated in FIG. 2. A portion of insulating layer 12 is then removed, by polishing for instance, to expose surface 14 of waferl0, as shown in FIG. 3. After the exposure of surface 14, the thickness, T of the material between upper surface 14 of the wafer and lower surface 16 of the insulating layer 12 is'recorded'for use in a subsequent process step.
As shown in FIG. 4, a diffusion of a boron acceptor impurity, may beformed through surface 14 of the wafer to create P+ layer 18 having an impurity concentration, near surface 14, on the order of from 3 X 10 to 10 X lo atoms per cubic centimeter (cc). Alternatively, layer 18 can be provided by either epitaxial growth of boron doped silicon or boron phosphide. A boron phosphide layer would inherently include a uniform' distribution of boron and phosphorous atoms and would be selected to provide an etch retardant. The impurity-concentration provided by doped epitaxial or diffused silicon is graded intothe substrate 10 by the diffusion process and at a depth of approximately 2 microns from the surface, for instance, the concentra-' toward the interfaceibetween the lightly doped wafer and the P+ layer. In any case; the 'fact'that doped silicon layer 18 operates as an etch stop for an anisotropic potassium hydroxide (KOH) etchant is utilized, as will be subsequently described, to provide a surface having a greater degree of planarization on which a thin layer of silicon of controlled thickness can be formed than is presently obtainable by known mechanical means employed-in standard dielectric isolation fabrication.
The addition of the acceptor-type impurity into a silicon layer 'l8 results in a change of the. crystallography of the silicon atoms thereof as compared to the crystallography of intrinsic silicon. More specifically, according to Ve'gards Law, the-latticeparameter, a of doped silicon is directly. proportional to the concentration ot 'dopa nt which is in .this instance; boron. The alloying stress resulting from the dopant is proportional to the change in latticeficonstant a and therefore is silicon dioxide or silicon nitride 22, which may isolate the as yet unformed epitaxial layer, is next provided on high concentration surface 14 of P+ etch stop layer 18. Next, handle or supporting structure 24, which may be comprised of polycrystalline silicon, is formed on some of the outwardly facing surfaces of insulating layer 12 and on the surface of insulating layer 22, as shown in FIG. 5. Insulating layer 22 forms a barrier which prevents out-diffusion of the boron impurity from layer 18 into polycrystalline silicon layer 24 as it forms. Hence, layer 18 out-diffuses only into material 10. As a result, layer 18 does not have to be as thick as it otherwise would have to be if layer 18 was not walled off by insulating layer 22 to remain at a concentration sufficient to act as an effective etch stop. Polycrystalline silicon layer 24 has a known thickness, T which is perhaps on the order of 4 mils, sufficient to provide mechanical support during subsequent processing steps. For protection of support material 24 during subsequent processing, layer 28 of silicon nitride is next deposited thereon, as shown in FIG. 5.
Portions of the silicon nitride layer 28, polycrystalline layer 24 and silicon wafer 10 are removed by grinding the bottom portion of the structure of FIG. to form the structure shown in FIG. 6. By utilizing the thickness dimensions T of silicon l0 and thickness T of the polycrystalline silicon 24, the grinder can be set such that the thickness, T (see FIG. 6) between high concentration surface 14 and exposed surface 32 of silicon is on the order of 1 mil.
Next, the structure shown in FIG. 6 is inverted, as indicated in FIG. 7, and submitted to an anisotropic etch utilizing a potassium hydroxide reagent (KOH) which proceeds to etch away silicon material 10 at least to the low concentration surface of formerly buried etch resistant layer 18. Although it has been indicated that silicon 10 is of a [100] crystallographic orientation, silicon of the [110] crystallographic orientation also could be used but etches at a slower rate. Silicon of the [111] crystallographic orientation probably would not be used for substrate l0 because of its slow etch rate in a KOH etch and because the etch stop layer 18 may not function therein. Assuming that silicon 10 is of the [100] orientation, it will be removed such that residual silicon material 34 will remain to form a somewhat V-shaped channel having outwardly facing side surfaces 36 forming angles A, as shown in FIG. 7, on the order of 125 with respect to surface 20 of P+ layer 18.
It has been discovered that the KOH etch rate of boron doped silicon, having a [100] orientation, varies widely when the boron concentration of the silicon ranges from about 3 X 10 to l X 10 atoms/cc and using a standard etch solution of KOH-H O-IPA. More particularly the etch rate of undoped or doped up to l X 10 atoms/cc [100] silicon is about 1.0 micron of thickness per minute whereas etch rates of about 0.95, 0.1 and 0.02 microns thickness per minute have been observed for respective boron concentrations of about 3 X 10", 7 X 10 and-1.0 X 10 atoms/cc. Therefore, the portions of silicon wafer 10 located between surface 32 and relatively lightly doped surface 20 of layer 18 is removed much more rapidly to provide surface 38 than the silicon between surfaces 20 and 14 of doped layer 18.
The degree of planarization of surface 20 tends to be controlled by the degree of planarization of layer 14 rather than the grinding step forming surface 32 of FIG. 6, and the planarization of surface 20 tends to control the planarization of surface 38 on which the monocrystalline epitaxial layer is to be formed. Since the boron concentration increases as the buried layer 18 is penetrated by the etchant, the etch rate is further decreased the farther the etch proceeds. This tends to planarize surface 38 and to provide a freshly etched or cleaned base on which a thin layer of high quality epitaxial silicon of uniform thickness can be grown, and in which active devices having a high density and substantial gain at high frequencies can be fabricated.
As shown in FIG. 8, epitaxial layer 40 is grown on planar surface 38. This epitaxial process also contributes to the formation of a thin layer, more specifically between I and 5 microns, of epitaxial silicon 40 of closely controlled, uniform thickness. From a crystallographic viewpoint, epitaxial silicon such as that of layer 40 is generally thought to nucleate in a stable diamondlike structure. However, the crystalline structure of layer 40, is influenced by the structure of surface 38 on which it forms. Since surface 38 may be a boron doped silicon having a surface concentration less than surface 14, the crystalline structure of the portion of layer 40 near surface 38 will tend to be deformed somewhat but not as much as if that portion had been grown on a more highly doped surface, such as 14, which is the case according to the closest prior art process of which the applicants are aware and which is described in the application cited at the beginning of the subject specification. Thus, the crystalline lattice, molecular arrangement and periodicity of epitaxial layer 40 do not have as many defects, irregularities, or imperfections as they would have if layer 40 had been grown on higher concentration surface 14.
Such crystalline defects interact with charge carriers, such as electrons or holes, in a variety of ways to have a deleterious effect upon the electrical characteristics of active devices formed therein. For-instance, defects deflect charge carriers thereby decreasing mobility, which is the proportionality constant between drift velocity and electric field strength. Hence, a minority carrier attempting 'to travel through a base region of a bipolar transistor formed in crystalline semiconductor material having many defects might not proceed to the collector before the driving field reverses direction, thereby decreasing the high frequency gain of the device. Moreover, carrier lifetime, which is the average life of a carrier, is decreased by recombination centers associated with some imperfections in semiconductor crystals and results in an increased recombination rate and, therefore, decreased gain at all frequencies. Finally, defects in crystalline structure also result in the existence of carriers at forbidden energy levels which provide leakage currents in response to reverse voltages across junctions, such as utilized in bipolar transistors and junction field effect transistors. Such leakage currents are undesirable because they increase internal device power dissipation without contributing to amplification capability.
Since epitaxial layer 40, has a high degree of crystalline integrity as compared to silicon on saphire, it provides a suitable starting material of substrate inlwhich dielectrically isolated active devices can be formed.
Moreover, because the degree of crystalline imperfection at surface 38 is reduced and because surface 38 is substantially planar, epitaxial layer. 40 can be made very thin to reduce device capacitances and of a uniform thickness between v1 and 10 microns. Epitaxial layer 40 can begrown by knownprocesses to be,
slightly N doped to provide a substrate in whichN channel, dielectrically isolated field effect transistors may be fabricated. Alternatively, epitaxial layer 40 may be lightly P doped to form a substrate in which integrated circuits utilizing dielectrically isolated PNPbipolar transistors can be formed. i
As shown in FIG. 8, portions of polycrystalline silicon layer 24, and associated portions of nitride layer 28 'and silicon dioxide layer 12 extend above top surface 42 of epitaxial layer 40 to form alignment surfaces for a non-contact mask, which does not have to come in contact with epitaxial layer 40. Hence',-,a greater degree of protection to the mask and surface 42 of epitaxial layer 40 may be provided by the structure shown in FIG. 8 than by standard mask and wafer contact" alignment techniques. This is because it is not neces+ sary to place a mask and epitaxial layer 40 in direct contact and then rotate them with respect to each other, as is generally the case. Moreover, because the distance between top surface 42 of epitaxial layer 40 and alignment surfaces 44, of the portions extending above surface 42, can be predetermined, the mask can be designed to eliminate parallax errors otherwise occurring in some non-contactj processes. If a noncontact process is not desired, then -.the edge of the wafer, which forms only a small. part of the volume thereof, can be trimmed as indicated by lines 46 of FIG. 8, which is not drawn to scale. Dimensions areincluded on FIG. 8 for purposes of illustration,
The above described method ofmanufacture, there fore, provides a layer 40 of monocrystalline siliconhaving a high degree of crystalline integrity on aisubstrate 24 from which it is insulated by layer 22; Since epitaxial layer 40 was formed on a smooth, planar, freshly etched surface 38 having a relatively small concentration of P-type acceptor impurities, layer 40 exhibits a high degree of crystalline perfection in all incremental volumes located more than a short distance above surface 38. The fact that layer 40 is formed on' a freshly etched and, therefore," clean surface 38 also contributes a higher degree of crystalline integrity than prior art processes forming the silicon on a freshly diffused surface. Furthermore, since epitaxial layerj40, in the above embodiment of the invention, is formedas a final'step,-it is not subject to injury possibly incurred duetosubsequent handling steps as are sometimes necessary in, prior art processes in order to complete thestartingmaterial. Hence, a method of manufacture has been disclosed which provides a suitable starting material'forthe manufacture of monolithic integrated circuits including active devices having improved high frequencyresponses and switching characteristics andwhich require a P+ buried layer providedby layer 18. Although the structure shown in-FIG. 8 provides a starting material which is superior in many respects to those provided by the prior art, the resulting structure does not include P+ layer 18 which might beundesirable in some applications. More specifically, layer 18 tends to provide a small amount of'ca pacitance which though being substantially less thanthe capacitance substrate shownin FIG. 8 to provide a further starting material comprised of monocrystalline silicon on an insulating substrate but wherein a buried P+ layer is not provided; v i 1 As indicated by line 46, the structure of FIG. 8 may be modified-by grinding portions of silicon nitride layer 28, polycrystalline silicon layer 44, insulating layer 22 and silicon l0 to provide a surface which is even with top surface 42 of epitaxial layer 40. Next, as shown in FIG. 9, an insulating layer 50 of either silicon dioxide or silicon nitride is'formed on the resulting exposed top surfaces 'of epitaxial layer 40, silicon l0, silicon dioxide layer 12, polycrystalline layer,24 and nitride layer 28.
Polycrystalline material52 or other supporting material is then formed on some of the outwardly facing surfaces of insulating layer 50.'Also as shown in FIG. 9, silicon nitride layer 54 is then deposited on some of the outwardly facing surfaces of polycrystalline silicon layer 52.
Next, as shown in FIG. 10, the bottom surface of the structure shown in FIG. 9 is lapped until silicon nitride layer 28 is removed 'tothereby provide surface 56. Surface-56 is then subjected'to an etch, such as a standard solution of nitric, hydrofluoric, and acetic acids (I-INO -I-IF-HACE, 5-1-1), suitable for removing selected portions of supporting materials 24 and 52. As a result, surface--58,"a s shown in FIG. 11, and which includes bottom surface 60 of insulating layer22, is exposed. Surface 58 is next subjected to an etchant,
such as hydrofluoric acid, which removes oxide 22 to thereby expose highconce'ntration surface 14 of P+ layer 18. P+ layer l8is then removed by either a mechanical-polishing technique or a selective etchant such as 3HNO II-IF-8HACE. Subsequently, a light etch might be employed to remove the portions of epitaxial layer 40 which were immediately adjacent to P+ surface 38 to thereby provide a resulting exposed planar surface 68,'shown in FIG. 13.
Thus, layer- 40 is comprised of monocrystalline silicon having a high degree of crystalline integrity and a uniform thickness so that it is suitable for providing a starting material in which field effect andbipolar integrated circuit devices canbe fabricated which have high frequency responses and fastswitching time. More specifically, layer 40 can be N doped to enable the structure of FIG. 13 to provide a substrate in which NPNbipolar, P. channel MOS and N channelfield effect devices can be'fabricated- Furthermore, other epitaxial laye'rs may be provided on selectively doped layer 40 to complete a substrate in which other types of electrical devices can be fabricated.
FIG.. 13,;.which 'is inverted with respect to FIG. 12, illustrates the starting material which is the product of the immediately foregoing process of the invention. Since the starting material of FIG. 13 does not include a buried P+ layer similar to layer 18, the associated out-diffusion and capacitance problems are eliminated. Furthermore, the structure of FIG. 13'can be severed along cuttinglinesillustrated by dashed lines'70 to provide the startingmaterial illustrated in FIG. 14.
What'has been described, therefore, are processes for providing a high quality monocrystalline silicon on an insulating substrate. The starting material of the one process includes a P+ layer which may be utilized to form buried layers for PNP transistors, which reduce collector resistances in a known manner, and the starting material of another process facilitates fabrication of devices which do not include buried layers. ln any case the starting materials are suitable to be employed for the manufacture of reliable, solid-state components having high densities, high frequency responses and fast switching times. Also, in any case, the resulting epitaxial layers can be doped or provide a base on which other layers are formed in accordance with known processes without departing from the scope of the present invention.
What is claimed is:
l. A method of manufacture for providing a thin layer of high quality monocrystalline silicon on an insulating substrate to form a starting material in which monolithic integrated circuits having high frequency active devices can be fabricated, such method comprismg:
providing a silicon wafer having a predetermined crystallographic orientation and first and second surfaces;
forming a layer of boron doped silicon having a first surface of a first concentration of dopant adjacent said first surface of said silicon wafer and an exposed second surface having a second concentration of dopant, said layer of doped silicon having an intermediate portion between said first and second surfaces having a concentration of dopant intermediate said first and second concentrations, said intermediate concentration being selected to retard the etch rate of a selective etchant;
forming a first layer of insulating material over said surfaces of said silicon wafer and said layer of doped silicon;
forming a first supporting layer over a portion of said first layer of insulating material;
exposing said second surface of said silicon wafer;
applying a selective etchant to said second surface of said silicon wafer, said etchant removing said silicon wafer at a first rate until a portion of said silicon near said intermediate portion of said layer of doped silicon is exposed, said concentration of dopant of said remaining boron doped silicon being selected to have an etch rate which is substantially less than said first etch rate;
10 epitaxially forming the thin layer of monocrystalline silicon on said exposed surface of said layer of doped silicon, said thin layer of monocrystalline silicon having a first surface and an exposed surface; forming a second layer of insulating material over said exposed surface of said thin layer of monocrystalline silicon;
forming a second supporting layer over said second layer of insulating material; and
selectively removing portions of said first supporting layer, said first layer of insulating material and said layer of doped silicon to expose a surface of said thin layer of monocrystalline silicon through which field effect and bipolar devices can be fabricated.
2. The method of claim 1 wherein said silicon wafer has a crystallographic orientation.
3. The method of claim 1 wherein said step of forming a layer of doped silicon utilizes a boron impurity wherein said first concentration is on the order of l X 10 atoms per cubic centimeter and said second concentration of said second surface is on the order of 6 X 10 atoms per cubic centimeter.
4. The method of claim 1 wherein said layer of doped silicon is formed by epitaxial growth.
5. The method of claim 1 wherein said layer of doped silicon is formed by diffusion.
6. The method of claim 1 wherein said first layer of insulating material is comprised of silicon dioxide.
7. The method of claim 1 wherein said first layer of insulating material is comprised of silicon nitride.
8. The method of claim 1 wherein said first supporting layer is comprised of polycrystalline silicon.
9. The method of claim 1 wherein said selective etchant includes potassium hydroxide.
10. The method of claim 1 wherein said step of forming a layer of doped silicon includes diffusing a boron impurity through said first surface of said silicon wafer.
11. The method of claim 1 wherein said step of forming a layer of doped silicon includes epitaxially growing a P+ layer upon said first surface of said silicon wafer.
12. The method of claim 1 further including the step of removing some of said thin layer of monocrystalline underlying said first surface of said thin layer of monocrystalline silicon.
13. The method of claim 1 wherein said second layer of insulating material is comprised of silicon dioxide.
14. The method of claim 1 wherein said second supporting layer is comprised of polycrystalline silicon.
UNITED STATES PATENT AND TRADEMARK OFFICE m'rntmme o CORECTIO PATENT NO. 2 3,929,528 DATED December 30, 1975 INVENT I Uryon S. Davidsohn; James B. Price It is certified that error appears in the above-identified patent and that said Letters Patent are hereby corrected as shown below:
[19] Change from Davidson to "Davidsohn".
[54] Change from MONOCRIPTALLINE t0 "MONOCRYSTALLINE".
[75] Change from Davidson to "Davidsohn".
In the Specification, column 1, line 1 change MONOCRIPTALLINE t0 "MONOCRYSTALLINE tis Sincd and A nes t:
RUTH c. Meson c. MARSHALL mm: A! 8 /1" Commissioner oflarem: and Trademarks
|Cited Patent
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|Monsanto Co
|Method for the preparation of inorganic single crystal and polycrystalline electronic materials
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|Texas Instruments Inc
|Insulated isolation techniques in integrated circuits
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|Mar 20, 1973
|Motorola Inc
|Thin single crystal silicon on an insulating substrate and improved dielectric isolation processing method
|Citing Patent
|Filing date
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|Aug 15, 1975
|Apr 12, 1977
|Hitachi, Ltd.
|Method of manufacturing semiconductor integrated circuit with prevention of substrate warpage
|Dec 30, 1976
|May 30, 1978
|Rca Corp.
|Silicon implanted and bombarded with phosphorus ions
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|Nov 18, 1980
|Wisconsin Alumni Research Foundation
|Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
|Sep 26, 1980
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|The United States Of America As Represented By The Secretary Of The Navy
|Method for etch thinning silicon devices
|Apr 1, 1985
|May 5, 1987
|Motorola, Inc.
|Method for prevention of autodoping of epitaxial layers
|Apr 3, 1989
|Mar 19, 1991
|Fabrication of dielectrically isolated semiconductor device
|Jun 25, 1990
|Sep 8, 1992
|Motorola, Inc.
|Semiconductor device and method therefore
|Apr 30, 1992
|Aug 10, 1993
|International Business Machines Corporation
|Method of making bipolar transistor with reduced topography
|May 15, 1992
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|Method of forming a BiCMOS SOI wafer having thin and thick SOI regions of silicon
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|Method of growth-orientation of a crystal on a device using an oriented seed layer
|Apr 16, 1993
|Jul 19, 1994
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|Method of forming thin silicon mesas having uniform thickness
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|Aug 23, 1994
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|Method for fabricating self-aligned epitaxial base transistor
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|Aug 22, 1995
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|Method for fabricating semiconductor device
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|Converting <100> and <111> ingots to <110> ingots
|Feb 14, 2012
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|Methods of manufacturing semiconductor devices including use of a protective material
|Feb 14, 2012
|Aug 15, 2013
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Semiconductor Device Manufacturing Methods
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification


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Funky Buddha - Oakland Park
The South Florida Technology Alliance (SFTA) vBeers events happen four times each month, once each in these cities: Palm Beach Gardens, Oakland Park, Boca Raton and Miami.
These informal networking/social events provide a relaxed environment to meet with other hands-on IT professionals and promote the growth of IT in South Florida.
Feel free to arrive and depart at your convenience. People start gathering around 5:30 PM to 6:30 PM and most people leave by 8:30 or 9:00 PM.
Please register at The South Florida Technology Alliance (SFTA) events page.
We're about:
IT - Operating Systems - Technology Startups - Open Source - New Technology - IT Professionals - Cloud Computing - Information Technology - Virtualization - Technology Professionals - Information Technology in Business - SaaS (Software as a Service) - vBeers - Linux - Unix - Web Technology - Security - Machine Learning - Containers - Networking - Referrals - Beer
South Florida Technology Alliance, John J. McLaughlin
(Get More Information . .)
"We examine the current state of play in the ongoing competition between the Linux and Unix server operating systems
There has always been a debate about how close Linux can get to the real operating system (OS), the core proprietary Unix variants that for two decades defined the limits of non-mainframe scalability and reliability..."
(Get More Information . .)
IBM introduced significant advances in its industry leading database software, IBM DB2, helping companies lower their operating costs while bringing together transactions and analytics in the same database to increase the speed of real-time data analysis. The new DB2 will incorporate hybrid transactional analytical processing (HTAP) available for Linux, Unix, Windows, and z/OS in December
In contrast to typical business environments where transaction processing and analytical systems are based on distinct architectures, hybrid transactional analytical processing (HTAP) runs analytics and transactions on the same database without compromising performance of either.
(Get More Information . .)


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Nothing But Nets Blog
Compete to Beat Malaria: Champions of Week ThreeSubmitted by Mariam Khan on April 18, 2014
With World Malaria Day right around the corner we continue to be inspired by all of our champions and we hope they've inspired you too. We hope that your Compete to Beat Malaria challenges are underway – we know we're on our way to reach our goal of 25,000 bed nets by World Malaria Day!
Compete to Beat Malaria: Champions of Week TwoSubmitted by Mariam Khan on April 11, 2014
As the countdown to World Malaria Day continues, we want to keep highlighting some of our most dedicated champions! We think that their stories will inspire you to Compete to Beat Malaria and help us reach our goal of 25,000 bed nets by World Malaria Day for families in need.
Banding together as Warriors in the Fight Against MalariaSubmitted by Margaret McDonnell on April 10, 2014
What do U.S. Congresswoman Barbara Lee, 12 year-old Cooper Smith and NBA All-Star Steph Curry have in common? They're all Warriors in the Fight Against Malaria! This was on full display this past Sunday at Nothing But Nets Night with the Golden State Warriors.
Bracketology for NetsSubmitted by Muriel van de Bilt on April 8, 2014
The final day of March Madness is here! We all filled out our brackets, dug out our college t-shirts, and reanimated our school spirit to watch the best of college basketball. This year, basketball star and Nothing But Nets Champion Ruth Riley found a way to match her love of college basketball with her passion to fight malaria in Africa, a leading killer of children under five.
On World Health Day, Help Protect Others from #Just1BiteSubmitted by Mariam Khan on April 7, 2014
Today, in honor of World Health Day, we are partnering with the Pan-American Health Organization (PAHO) to raise awareness about the serious and increasing threat of vector-borne diseases.
Compete to Beat Malaria: Champions of the WeekSubmitted by Mariam Khan on April 4, 2014
As we countdown to World Malaria Day on April 25, we want to recognize some of our champions and the awesome ways they've incorporated their passions for sports to raise awareness and send nets to save lives. This month, we want all our supporters to take a challenge and help send 25,000 bed nets by World Malaria Day. Our champions inspire us and we hope they inspire you too.
Compete to Beat Malaria!Submitted by Chris Helfrich on April 1, 2014
Are you enjoying March Madness or is your bracket busted like mine? Perhaps you've moved on and are looking forward to the Masters Tournament or this summer's World Cup in Brazil. If you have sports on your mind – or even if they aren't – I have a challenge just for you. Get active this April and Compete to Beat Malaria!
Doing Good DeedsSubmitted by Claire Loxom on March 25, 2014
Children everywhere are taking action in the fight against malaria. It doesn't take a lot to make an impact on the lives of people around the world. This is particularly true in the case of Sarah Friedman, a 7th grader at Richmond Jewish Day School in British Columbia.
Sing. Dance. Create. ACT NOW! Here's how…Submitted by Carolyn Commons on March 13, 2014
One of the most important aspects of the arts is its ability to change the world. Whether we're talking about a work of art by Picasso, a song by The Beatles, or a musical like Rent, artists are a crucial part of our society; artists are unafraid to shine a light on tough issues and really call for global change through their work.
Help Nothing But Nets Celebrate International Women's DaySubmitted by Mariam Khan on March 7, 2014
International Women's Day on March 8 celebrates the social, political and economic achievements of women around the world. Every hour of every day, UN Foundation campaigns are working to drive progress for girls and women.
The President's Budget: Your Voice Counts!Submitted by Chris Helfrich on March 6, 2014
Did you know that early every year the President submits a budget request to Congress? The President's budget is a signal of his priorities and is his opportunity to share with Congress and the American people his thoughts on how we should invest our taxpayer dollars.
Welcome, Dan!Submitted by Nothing But Nets on March 4, 2014
The Nothing but Nets team has exciting news to share! Dan Skallman recently joined our team as Campaign Associate! Dan joins us after spending last year in Mali and Senegal, where he experienced first-hand the devastating effects of malaria and how it impacts people's lives.
Celebrate Your Birthday with Me and Nothing But NetsSubmitted by Rick Reilly on February 26, 2014
A lit birthday candle means a lot to me, since I'm so old I remember when we invented fire. Good times.I still make a wish when I blow out my candles. Sometimes they even come true. But not everyone is that lucky. Every year, more than half a million children in Africa die from malaria – that's one child every 60 seconds. Those children didn't have the chance to celebrate their next birthday, much less see a wish come true.
Fighting Malaria with an NBA All-starSubmitted by Mariam Khan on February 20, 2014
Every day we are amazed by the work of our champions and supporters, helping send millions of life-saving nets to families in sub-Saharan Africa to prevent malaria. It also doesn't hurt when one of the NBA's biggest stars pledges to donate three bed nets for every three-pointer he makes.
Spread the Love on Valentine's DaySubmitted by Mariam Khan on February 7, 2014
This year, Valentine's Day is on a Friday. This means that you'll either a) struggle to find a decent dinner reservation b) look everywhere for a halfway edible box of chocolates or c) plan ahead and make this Valentine's Day meaningful.
Emergency Need in South SudanSubmitted by Chris Helfrich on February 4, 2014
Turmoil in South Sudan has forced thousands to flee their homes and seek safety in refugee camps. As families flee from violence, they face another threat: malaria. Nothing But Nets and our United Nations partners have long worked in three camps run by the UN Refugee Agency in Maban, South Sudan, helping to reduce malaria in the camps and the nearby community.
NFTY Takes on MalariaSubmitted by Olivia Kessler on January 29, 2014
Did you know malaria is transmitted through the bite of a mosquito carrying the Plasmodium parasite and kills 600,000 people every year? Did you know malaria exists in 109 countries around the world, making half of the world's population susceptible to the disease? Did you know that every 60 seconds a child dies from malaria? Neither did I.
Champion Ruth Riley Joins the Nothing But Nets RanksSubmitted by Rachel Henderson on January 23, 2014
WNBA star Ruth Riley can add yet another title to her already impressive career roster. Ruth is joining the ranks of Nothing But Nets! Ruth has been a Champion since our launch in 2006, but now she's collaborating with our team behind the scenes to help make the Team Bzzzkill experience even more exciting.
Introducing the Nothing But Nets Malaria Fellows!Submitted by Veronica Grant on January 22, 2014
Last week, the RAC and Nothing But Nets kicked off our semester long Malaria Fellowship -- in partnership with the United Nations Foundation -- for undergraduate students. We searched the country far and wide for the best candidates and narrowed it down to these ten students. Fellows are already busy building out their core group of students and generating interest on campus to help save lives from malaria through advocacy and fundraising this semester.
Have You Heard? U.S. Government Continues Strong Leadership to Fight MalariaSubmitted by Liz Wing on January 17, 2014
Great news, Team Bzzzkill! Thanks to the hard work of advocates like you across the country, Congress has agreed to continue playing a strong leadership role in the global fight against malaria.
This week, Congress passed a comprehensive spending bill that increased financial support for the President's Malaria Initiative and The Global Fund to Fight AIDS, Tuberculosis and Malaria. The U.S. committed $1.65 billion to The Global Fund and $665 million to the PMI – an increase of $17 million from last year!


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Posts Tagged 'Reggae'
Bluntskull – Straight Raggamuffin Hip Hop Mixtape Volume 5
Dig it? Why don't you follow Bluntskull on Mixcloud >> https://www.mixcloud.com/bluntskull/ DOWNLOAD Bluntskull – Straight Raggamuffin Hip Hop Mixtape Volume 5 Tracklist: INTRO CUTTY RANKS – Original Ranks (bluntskull blend) BOBBY KONDERS & MIKEY JARRETT – Mack Daddy CHESHIRE CAT – Boom Shot Dis (dubplate) JAMALSKI – Piece of Reality (dubplate) CAPLETON – Tour (dubplate) SEAN…Read More
Sunday Best Mix
Aldo is back after a little time off and sweetens your Sunday with an eclectic selection of classic tunes. DOWNLOAD Aldo Vanucci – Sunday Best Mix Tracklist: Simply beautiful – al green Oh daddy – Natalie cole Love theme from Spartacus zero 7 mix – terry callier Magic in the air – badly drawn boy…Read More
Dubcast Vol.10 (Duppy ft. Flav)
Dubcast 10 is a fresh mix by Duppy and vocalist Flav ahead of their appearance at Echo Chamber X. DOWNLOAD Dubcast Vol.10 (Duppy ft. Flav) Tracklist: Wipe 'em out feat. Flav Icicle – Acid Step UZ – Magellan 3RDi – Def Note Ben Vearse – Dark Star Dubamine – Froth Geode – Ode Perverse -Tepidus Dark…Read More
Oonops Drops – 50th Jubilee
It's time to celebrate Oonops' 50th jubilee of his genre-encompassing vinyl only show 'Oonops Drops' for our station Brooklyn Radio on Mixcloud with not less than three supreme exclusive guest mixes by DJ and producer GUTS (France), Morcheeba's creator Paul Godfrey (UK) and beat maestro Figub Brazlevic (Germany)! Oonops opens up the show with some…Read More
Dubcast Vol.09 (Bukkha)
Bukkha steps up for volume 9 of Dubcast with a heavyweight selection full of dubs and classics from Outkast, Junior Dread, Von D, Radika Guru, Dubamine, DJ Madd, and TMSV. The mix represents the many facets of the worldwide sound system community and the constant evolution of the music. Be sure to check out Bukkha's…Read More
Dubcast Vol.07 (Laurent Fintoni)
The mix was recorded live in one take on two turntables the day after the Deep Medi 10th anniversary tour date in NYC. DOWNLOAD Dubcast vol 7 Tracklist: Mungo's Hi Fi ft. Charlie P – Rules of the Dance (Kahn remix) Ishan Sound – Trojan (Gorgon Sound remix) Sully – Inroads Patrick Sexx – Om…Read More
Straight Raggamuffin Hip Hop Mixtape Volume 4
Bluntskull is back and this time he mashes Ragga and Hip Hop tunes with tons of exclusives! Check out more from Bluntskull at Soundcloud & Mixcloud. DOWNLOAD Straight Raggamuffin Hip Hop Mixtape Volume 4 Tracklist: INTRO JOHNNY OSBOURNE – Rock it Tonight (dub) MAD COBRA – Gundelero (dub) CUTTY RANKS – Who seh me Done (dub) GENERAL T.K.…Read More
Dubcast Vol.06 (Mixed by E3)
"It was a blessing to be asked, and a real pleasure to make this mix for Dub-Stuy. All live, strictly vinyl & acetate, two turntables and mixer, this selection features current and forthcoming ZamZams and Khaliphonics, alongside recent releases and dubplates from some of our friends & allies – plus a sprinkling of old, timeless,…Read More
The Deeper the Bass, The Closer to God
This mix is dedicated to upcoming Subatomic Sound System DJ sets by Emch for Deep Space at Cielo Sunday 5/22 NYC (joined by Screechy Dan on the mic) and for Infrasound Festival in Wisconsin 6/4 & 6/5: "If you don't know your past, you don't know your future. After coming off a run of tour…Read More
Two-Tone Tuesday
Two Tone Tuesday is a celebration of all things SKA! A musical movement created in 1950's Jamaica from a combination of traditional mento, calypso and the newly added American blues influences. Later evolving in the United Kingdom, via the integration of west indian migrants into working class areas across Britain, into the 2Tone sound (also…Read More


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A project supported by the Cultural Export Fund
Joshua Cassar Gaspar has just participated and presented Maltese Film projects at the International Film Festival in Rotterdam and at the CineMart Co-Production Market.
"Participating at the International Film festival Rotterdam & CineMart Co-Production Market allowed me to access a wealth of knowledge on international filmmaking practices and how to manage the internationalisation of indigenous film. Participating in the co-production forum allowed me to create a network with foreign co-producers for the realisation of indigenous film products."- Joshua Cassar Gaspar


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Sunday, April 30, 2017
'Aladdin' Helmers Mourn Death of Genie Actor Robin Williams
In the wake of the tragic death of celebrated actor and comedian Robin Williams on Tuesday, Walt Disney Studios has issued the following statements from the key creatives who worked ... Continue Reading →
Disney Fairytales: 'Alice' in Production; 'Into the Woods' Trailer
Walt Disney Studios's hearty slate of upcoming live-action takes and twists on some of popular fairytales and classic stories continues to ramp up, with a new trailer for the ... Continue Reading →
Netflix Canada Strikes Disney Deal
Netflix streaming service in Canada has reached a multiyear exclusive agreement with Walt Disney Studios that will bring first-run live-action and animated feature titles to subscribers ... Continue Reading →
Disney Preps 'Lion Guard' TV Movie and Series
Disney Television Animation has kicked off production on The Lion Guard, a new animated TV movie and series that will continue to story of Walt Disney Studios' Oscar winning 1994 ... Continue Reading →
Disney Vet Troy Skabelund Joins Starburns Industries
Former Disney Interactive finance leader Troy Skabelund will join the ranks of toon house Starburns Industries (Rick and Morty, Anomalisa) as Chief Financial Officer. Skabelund brings ... Continue Reading →
Bonhams Offers Rare Disney Animation Art
Bonhams will hold an auction May 4-5 of entertainment memorabilia featuring items representing the best of traditional animation, as well as original vintage comic and cartoon artwork. Walt ... Continue Reading →
Five Toon Trivia Facts You Don't Know (And With Good Reason)
When Howard Djadouin passed away last year at the age of 108, few in Hollywood mourned, chiefly because no one knew who he was. Howard Djadouin had nothing to do with film or animation ... Continue Reading →
The True Tale of Br'er Oscar
Every year around Academy Award time, I think about a particular film, one that despite its polarizing controversy broke new ground for both Hollywood and Oscar: Disney's semi-animated ... Continue Reading →
Disney's 'Rescue Rangers' Due for Live Action Feature
According to The Hollywood Reporter, Walt Disney Studios has picked up a pitch for a live-action movie based on the '80s-'90s animated TV series Chip 'n Dale Rescue ... Continue Reading →
A Century of Dinos
What is it about dinosaurs and animation? One could argue that animation is the perfect method of bringing them to life onscreen, which is why the love affair between animators and ... Continue Reading →


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Piranha 3DD Coming To Get You!
At a woebegone water theme park, the lifeguards have been replaced with strippers, and the piranhas are out in full force in this comedy thriller that pits fish against foul.
Things reach a fever pitch when David Hasselhoff, of all people, comes around to save the day bare chested and in slow motion.
And if there's anything left to chew--like scenery--it looks like Christopher Lloyd is game, with help from fellow old-timers Gary Busey and Ving Rhames plus lots of half-naked hussies.
Piranha 3DD--the first film in the esteemed Piranha series to be filmed entirely in 3D--opens on June 1.
Or will you just wait till they swim downstream to DVD?
Get the ICYMI: Today's Top Stories Newsletter Our daily newsletter delivers quick clicks to keep you in the know
Catch up on the day's news and stay informed with our daily digest of the most popular news, music, food and arts stories in New York, delivered to your inbox.
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TicketsTue., May. 23, 7:05pm
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YOGA Beginners' Classes
Ashtanga Yoga/Vinyasa Flow
In these sessions, we will learn the primary series of Ashtanga Vinyasa Yoga. It is a sequence of flowing postures, with emphasis on breath, bandhas & focus.
We will use many variations from Hatha Yoga postures, Restorative slower relaxation poses and Deep Relaxation.
We will work on flexibility as well as strength, balance, alignment and mindfulness.
Vinyasa Flow and Ashtanga Yoga are a dynamic form of Hatha yoga. There is a focus on the breath which provides the rhythm to move from one position to another as well as igniting a fire that burns toxins and give more flexibility which leaves you refreshed, aligned and clear.
Tuesday 6.15pm till 7:45pm
The location varies between the Main Barn and the Cider Barn
For the main barn, follow the signs EarthSpirit.
For the Cider Barn, park after the thatched house, walk back to the lane turn left, find the sign Cider Barn. It is a garage door signed Yoga.
14 Mar
21 Mar
28 Mar
4 Apr
11 Apr
18 Apr
25 Apr
2 May
9 May
16 May
23 May
30 May
Main Barn
Cider Barn
No Yoga
Cider Barn
Main Barn
No Yoga
Cider Barn with Claire
No Yoga
Cider Barn
Cider Barn
Cider Barn
Main Barn
Cost is £6 per session
Wear comfortable clothes that allow you to move freely.
For you own comfort, do not eat 2 hours before.


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Need a book? Engineering books recommendations...
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- Subject: RE: Repeat Designs
- From: "Gary Loomis" <gloomis(--nospam--at)MasterEngineersinc.com>
- Date: Fri, 28 Jul 2006 11:47:02 -0400
We have been asked to design a facility that will be repeated 5 more times. The owner has asked for a fee to do the original design and include costs for using the design for the other 5 facilities. Any thoughts on what our cost should be for re-using the design? Thanks, Gary Loomis ******* ****** ******* ******** ******* ******* ******* *** * Read list FAQ at: http://www.seaint.org/list_FAQ.asp * * This email was sent to you via Structural Engineers * Association of Southern California (SEAOSC) server. To * subscribe (no fee) or UnSubscribe, please go to: * * http://www.seaint.org/sealist1.asp * * Questions to seaint-ad(--nospam--at)seaint.org. Remember, any email you * send to the list is public domain and may be re-posted * without your permission. Make sure you visit our web * site at: http://www.seaint.org ******* ****** ****** ****** ******* ****** ****** ********
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Unity is a cross-platform game engine which has risen to prominence as the go-to engine for indie game developers. Coming from the world of application development, I've become quite enamored with process. Specifically, I have become enamored with good process.Read More >
Recent Posts
Are you new to Dart, Angular2, or Bootstrap but want to hang out with all the cool kids making single page applications using bleeding edge software? As a newcomer, combining that stack and turning it into your first Dart web app, it can be a pain in the ass or really easy. Let's follow our dreams and shoot for the latter! Here's my take on Dart web development using AngularDart 2.Read More >
The mobile loyalty space has been one charged with fierce competition -- fueled by the increasing use of technology in our daily lives. During the late 2000s and early 2010s, we saw the advent of Belly, LevelUp, Groupon and a host of other smaller companies with similar objectives.Read More >


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Published byKeeley Rothery Modified over 2 years ago
Social development and sub-national growth in developing countries Eelke de Jong Jeroen Smits
Setup Introduction Previous studies on social development and growth Hypotheses Dataset. Countries. Districts Results
Determinants of economic growth Many cross-country studies Dependent variable: change in income per capita Explanatory variables -Conditions at the beginning of the time period -Initial income per capita (convergence) -Economic and social indicators -Developments over the period of some variables -Sample periods are 2 -3 decades Hardly any study focusing on economic growth at sub-national level: Lack of data
Social capital and economic growth Trust high-trust lowers transaction costs. written contracts are less needed. government officials are more credible Cohesion and lack of conflicts facilitate growth. reverse causality
Social capital: groups Groups can invoke cooperation and solidarity, so that collective action problems can be solved easily, however they can also facilitate rent seeking Bridging social capital / Putnam-esque groups -Enhance economic growth Bonding social capital / Olsonian groups -Hamper economic growth (rent seeking)
Some previous studies Putnam (1993) Italian regions Knack and Keefer (1997) -29 countries World Values Survey for trust and civic cooperation Beugelsdijk (2006) -Trust reflects the quality of institutions -Knack and Keefer's result is driven by a too heterogenous dataset -The effect of trust on growth is only significant for low trust societies, which are often relatively poor countries.
Hypotheses Indices of Social Development Our sample contains developing countries only We expect a positive relation between development and. trust. intergroup cohesion The relation between development and Clubs and associations is ambigious bridging social capital (+) bonding social capital (-)
Data description Data are from the Database Developing World, a huge household- level database with data from household surveys on 20 million persons in 100+ developing countries A district database is created by aggregating data from the household level to the "district" level Data are included for 377 districts in 30 developing countries For each district, data for two points in time are used to create a district panel. Time points are on average 5-6 years apart. Countries included are Armenia, Bangladesh, Bolivia, Ivory Coast, Cambodia, Cameroon, Colombia, Dom. Republic, Egypt, Eritrea, Ethiopia, Ghana, Guinea, Guatemala, Haiti, Kenya, Madagascar, Malawi, Mali, Mozambique, Namibia, Niger, Nigeria, Rwanda, Senegal, Tanzania, Chad, Uganda, Zambia, Zimbabwe
Analyses Data are analyzed using two-level multilevel analysis Levels included are district and national The dependent variable is the change in district level of development between T1 and T2 Major independent variables are three Indices of Social Development: intergroup cohesion, interpersonal safety and trust, and clubs and associations, measured at T1 Both direct effects of the indices and interaction effects among the indices and between the indices and control factors are tested (to gain insight into the context dependency of the effect)
Variables Dependent variable is change in level of development at district level, indicated by a wealth index based on household assets. Assets included are TV, fridge, car, electricity, running water, flush toilet. Wealth index is standardized across districts and years The indices of social development are derived from ISD. Indices are taken from an ISD year preceding T1 by no more than three years or succeeding T1 by no more than one year. If indices were lacking from that ISD year, indices from another ISD year as close as possible to T1 were taken.
Control factors Average years of education of adults (25-55) in district at T1 and change therein between T1 and T2. Average occupational level in district and change therein between T1 and T2. Dependency ratio: Number of individuals aged 15-64 in district divided by number of individuals under 15 and over 64 and change therein between T1 and T2. Average household size in district and change therein between T1 and T2. Urbanization of district (urban=1) Convergence is addressed by including wealth at T1
Interactions with control factors (role of context) Positive effect of cohesion is stronger under more favorable circumstances (in areas that are more developed, urban, have higher levels of education and occupation and more favorable dependency ratios) Negative effect of clubs is stronger under more favorable circumstances (except interaction with dependency ratio, which is not significant) No significant interactions with trust: Effect of trust is significantly positive under all circumstances
Conclusions Interpersonal safety and trust is the most significant and robust social indicator for explaining economic development at the district level. Intergroup cohesion also significantly contributes to growth but is less robust The influence of clubs and associations is negative and thus seems to represent bonding social capital More favorable circumstances enhance the negative effect of clubs and associations and the positive effects of cohesion
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Support shouldn't be something that happens every once in awhile. At SolidFire, support is an active process that happens consistently from the moment a SolidFire cluster is deployed. SolidFire Active Support continuously monitors and diagnoses systems, ensuring SolidFire products are maintained and operated at the highest possible level of availability and performance.
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Senior High Lakeside 2007 June 24-June 30 http://www.LDYM.org
closer to complete. Phillipians 1:6 And I am certain that God, who began the good work within you, will continue his work until it is finally finished on the day when Christ Jesus returns. Impact Speaker: Matt Morginsky
Sunday 2:00-4:00Registration 4:00-4:45Counselor, CIT Meeting, YLT Meeting, New Camper Orientation (Wesley) (WoHoMis) (South Auditorium-both) 5:00-6:45Chicken BBQ down by the Lake 7:00-8:30South Auditorium/Kick-Off 8:35-8:45YLT Meet & Pray 10:15-10:45In House/Get Acquainted 10:45Quiet Time Monday-Friday 9:00Morning Watch at the Gazebo (excluding Thursday) 9:30-10:45Praise and Worship w/ Pastor Todd 11:00-11:45Lunch A / Week-Long Interest Group 12:00-12:45Lunch B / Week-Long Interest Group 1:00-3:45Free Time/Sports 4:00-5:00Impact Session with Matt Morginsky 5:15-6:00Dinner A / South Auditorium 6:15-7:00Dinner B / South Auditorium 7:15-9:30Evening Program (see schedule) 9:30-9:45YLT Meet & Pray 9:30-10:45Free Time 10:45Quiet Time Saturday 9:00Morning Watch 9:30-10:30Clean-up/Pack 10:30Fellowship Circle/Closing ***All campers must be checked out and picked up by 11:00 am.
Sunday Meetings CIT Meeting (required) Counselor Meeting (same as pre-camp) YLT Meeting New Camper Orientation
Reminders Need churches to "Adopt" WoHoMis residents for breakfast (30 more) No Morning Watch on Thursday No program opposite dinner on Friday No mission challenges between groups
Spirit Day Themes Sunday – School Spirit Monday – Toga Night! Tuesday – Camp T-Shirt* Wednesday – Country Western Thursday – Hawaiian Night Friday – Communion Dress-up
Sunday Chicken BBQ in the park CIT's will be working the BBQ Mission Focus Introduction Kick-off in South Auditorium Fast Start Winner Announced Hope to have an early evening!
Monday Morning Watch – Westminster/Step of Faith Opposite Dinner – JASON ILLIAN Evening Program - JASON ILLIAN Author of Undressed and MySpace MyKids Author of Undressed and MySpace MyKids
Tuesday Morning Watch – Kenton Camp Picture Between Meals Opposite Dinner – Scavenger Hunt Set meeting place on Monday Set meeting place on Monday Evening Program – Hoover GINNY OWENS
Wednesday Morning Watch – Van Buren Opposite Dinner – Prayer Walk Evening Program – Sadie Hawkins Dance Sadie Hawkins Dance Auction Auction Bands? Bands? Need items!! Bring good stuff to sell!Need items!! Bring good stuff to sell!
Thursday No Morning Watch Opposite Dinner – Credit/Sharing Faith Evening Program – Talent Show
Friday Morning Watch – Riverside Evening Program – Communion Nothing opposite dinner on Friday
Saturday Morning Watch – YLT Closing Circle Check out by 11:00 am
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My favorite episodes here on VTC are where we get a chance to spotlight normal everyday Jesus followers living out their identity in Jesus. The theology and the theory are empty if the rubber never meets the road. To that point I am excited this week to be joined by Carl and Lesley Chomko and to have them here to share their story as they pursue adoption. We will discuss the why, the excitement, and the concerns. #Missional #Jesus #BabyChomko #ComingSoon
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Added to Shopping Bag
Daniel JeanRichard TV Screen 23116-11-61A-AC6 Double Retrograde Watch
Listed by Penny Lane
Final Sale: $3,169.00
Final Sale. Not returnable.
This item is 'Final Sale' and may not be returned.
However, if your item was misrepresented in any way, you can file a misrepresentation claim. Tradesy will investigate and you'll be eligible for a Full Refund.
Shopping Bag :
Reserved for -:--
Daniel TV Screen 23116-11-61A-AC6 Double Retrograde Watch
Shipping Included
Pay with Credit Card, PayPal, or Affirm.
5 people saved this item
This item may have been worn but has no visible signs of wear.
Brand: Jean Richard
Model: TV Screen 23116-11-61A-AC6
Gender: Men's
Movement: Swiss automatic, 39 jewels
Case Material: Stainless Steel
Bracelet / Strap Material: Rubber
Clasp / Buckle Material: Stainless Steel
Clasp Type: Tang
Bracelet / Strap width: 22 mm at lugs
Total Weight: 88 gr
Case Shape: Curved Rectangle
Case Length: 41 mm
Case Length with Lugs: 51 mm
Case Width: 40 mm
Case Width With Crown: 42 mm
Case Thickness: 11 mm
Dial Color: Black
Dial Markers: White Luminescent Arabic Numerals
Crystal: Sapphire
Crown Type: Pull Up
Crown Material: Stainless Steel
Water Resistant: Yes
Fits Wrist Up To: 8 inches
Box / Papers:Yes / Yes
Style Tags:
Daniel JeanRichard., TV Screen, 23116-11-61A-AC6, Double Retrograde, JeanRichard Watches
Wed 4/26/17 - Sat 4/29/17 (3-6 days)
This item is Final Sale and may not be returned if you have a change of heart or if it doesn't fit quite right. We recommend taking a good look at all item details before purchasing.
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We are glad that you are considering Aims! You may be able to use coursework taken at a prior college to meet assessment requirements and as transfer credit to meet graduation requirements.
Apply for Admission to Aims
Complete the online application, or apply in person at any Aims Campus.
Apply for Financial Aid, if needed
This is optional, but it's free to apply. You may qualify for:
If you plan to complete a degree at Aims, please send us your official transcript to us as soon as possible so we can transfer in any applicable coursework. A transcript is official if it is sent directly to Aims from your previous college or if it is delivered in a sealed envelope. Transcripts that have been opened before delivery to Aims will be considered unofficial. We must have a transcript from each college that you have attended outside of Aims.
Official transcripts can be mailed to:
Aims Community College
Admissions, Registration and Records
PO Box 69
Greeley, CO 80632
We also accept electronic transcripts. Simply choose Aims Community College as the recipient on your order form.
Please see the Transfer Information page for more information.
Complete the online New Student Orientation
The online New Student Orientation will help you get off to a good start at Aims.
Assess for college placement or provide transcripts
Assessment in reading, English, and math helps determine proper course-level placement and is required for those individuals who are certificate/degree seeking (some certificate programs are exempt). Assessment is also a prerequisite requirement for courses like English, math and science; it is not required for courses like PE, art, or conversational foreign language.
Assessment may be met these ways through proper documentation:
* Scores are valid for a period of three years from the date taken.
** Grades must be within the past 10 years.
Otherwise, visit an Aims campus to take the Accuplacer assessment. For more information and for access to review resources, visit the Testing Center webpage.
Meet with an Academic Advisor
Call for an appointment. You do not have to meet with an advisor if you are taking classes for personal interest.
Register for classes
Pay for classes
Prepare for classes


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Safari Pop-Up Blocker - How to Block Pop-Up Windows in Safari ...
A step-by-step tutorial on how to block pop-up windows in the Safari web browser .
Pop-up blocker no longer working: Not just Safari, 10.3.8, or Macs ...
Feb 18, 2005 . Pop-up blocker no longer working: Not just Safari, 10.3.8, or Macs Read this blog post by CNET staff on MacFixIt.
Safari 3.0 Help: Blocking pop-up windows
Some webpages display pop-up windows. For example, a webpage might use a pop-up window to request your user name or to display ads. You can block .
How to Disable Common Pop-Up Blockers
Safari. Safari's pop-up blocker is integrated into the browser, much like the pop- up blocker for Internet. Explorer. To disable the pop-up blocker: • Open the Safari .
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Safari: Using The Pop-Up Blocker. Perhaps one of the most appreciated features of Safari is its built-in Pop-Up blocker. If you've spent any time at all on the Web .
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Safari > "Block Pop-Up Windows". Safari > Preferences > Security. Firefox > Preferences > Content. Turn Off Pop-Up Blocker in Safari and Firefox on a Mac .
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There are two ways to disable Safari's pop-up blocker. Go to the "Safari" menu and un-check the option to "Block Pop-up Windows. .
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Listed below are some of the most popular pop-up blocking software packages, . Safari's pop-up blocker is integrated into the browser, much like the pop-up .
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Aug 19, 2011 . Safari pop up blocker doesn't always catch the pop ups. Get GlimmerBlocker here: http://glimmerblocker.org/ Carolyn. 27" iMac 3.2GHz Intel .
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A step-by-step tutorial on how to disable the pop-up blocker in Safari for the iPhone.
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Oct 23, 2008 . A Quick Tip on how to Block Popups in Safari ------------------------------------------ Recorded with iShowU on my iMac Edited in iMovie .
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Use a Pop-Up Blocker with Safari. . From the Safari Menu, select Block Pop-Up Windows to uncheck and disable the pop-up blocker. Note: Safari doesn't have .


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(if this is a private computer)
Yes please, register now!
Start a Conversation
Add A Photo
When you purchase a digital subscription to Cake Central Magazine, you will get an instant and automatic download of the most recent issue.
This is the template I used to do the turtle cookie in my photos. The simple lines made it easy to hand cut.
Turtle Cookie
Pizza Cookie Cake


text: Is a little restaurant, with not many tables inside but is all the time busy! the restaurant is authentic thai<server, chef,decorations> is like mini bangkok ! the menu is SUPER CHEAP!!! and the food is large portions ! we didn t finish the food..was too much! we didn t expect to be like that for the price what we paid... More


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Kramer Introduces the RC-74DL Master Room Controller with Unique LCD Group Text Labels
Provides a convenient end'ą'user experience through the combination of the 12 configurable, multi'ą'color front panel buttons with unique LCD text button group labels.
June 26th, 2012
Kramer Electronics is pleased to announce the introduction of the highly versatile RC'ą'74DL master room controller. The RC'ą'74DL can function either as a standalone unit that controls room facilities such as: lights, screens, drapes, etc., or as part of a more demanding K'ą'Net™ room control system.
The RC'ą'74DL provides a convenient end'ą'user experience through the combination of the 12 configurable, multi'ą'color front panel buttons with unique LCD text button group labels. Each button of the unit supports the ability to hold multiple layers of functionality for the same button. The RC'ą'74DL also has a rotary controller that may be configured as a digital volume control knob or set up for any other function, utilizing variable settings and adding to this unit's flexibility and intuitive ease'ą'of'ą'use.
The unit has an Ethernet port and three bidirectional RS'ą'232 ports for controlling AV equipment, four relay contact closure ports that conveniently control other room items related to the AV system and two general purpose I/O ports that can function as digital inputs/outputs or analog inputs, interfacing with a variety of devices such as sensors, switches, LEDs, or relays.
The RC'ą'74DL is compatible with Kramer's Site'ą'CTRL™ software for remote room control and monitoring over Ethernet. The unit's features are configured via Kramer's GUI based configuration software, K'ą'Config™.
The RC'ą'74DL fits a standard US 3 gang electrical box, facilitating easy integration into any environment. Installation in wooden or plaster walls is extremely easy using the supplied mud'ą'ring.
The unit can also be mounted on a podium or a table using Kramer's K'ą'POD301 Podium Table Bus. The RC'ą'74DL is available in white, black, gray and brushed aluminum.
The RC-74DL sells in the United States at a list price of $995.00 per unit. The RC-74DL is currently in stock and available from Kramer Electronics sales companies around the world.
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We've all been there: You've built your perfect site, you've filled it with amazing content, you've followed all the rules of coding and building but there's still a problem!
No one comes to visit your site.
No one.
I can say with confidence that if the above situation describes you, there are products that can help you. Now I present… The best free SEO software programs!
SEO software analyzes your content and helps you figure out what you need to do in order to make your site rank in Google. When you rank in Google, you can easily get more people to come to your site! So here are the programs:
I put this one first because it is simply the best. No two ways about it. Yoast works as a plug-in to your WordPress site, and analyzes in real-time what you are doing and what you need to improve.
Yoast creates a list of things you are doing well so you can keep doing them, and a list of things you are doing poorly, and what you can do to improve those! If you look at sites like Barking Drum, you can clearly see excellent examples of SEO… And you can't get quality like that without good software!
Google SpeedPage Insights
Who better to show you how to make your page run more efficiently than the company that essentially runs the internet? SpeedPage helps you with things most people would never think to check…
Which puts you ahead of the game! For example, SpeedPage Insights tests how quickly each page of your site loads, and how to make your site run more quickly. The more responsive your site is, the more users will enjoy using it!
Moz is one of the internet's definitive sources for SEO education. They have both a free and a paid version of their service, which works WONDERFULLY. Moz is a toolbar that you install into your web browser that offers real-time metrics on the site you're reading.
How authoritative the site and domain are, what kind of links are on the page, and how responsive and likely to rank well the page is. Moz also has free online classes on SEO! Take advantage of their free services. You will learn more than you thought you could!
Chrome Developer Tools
Did you know you can look at the source code for any website, including your own? You can view everything from web code to mobile code, HTTP status, and create edits just to see what they look like. Going to Chrome>View>Developer Tools unlocks a part of the web that few people knew they had access to. Use Google to figure out what Google wants in a site… Best of all, it's completely free!
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You don't need to hire a trained professional who will charge you hundreds per hour. You can take steps to improve your SEO right from your laptop… And you can do it in less than 30 minutes for free!


text: Apoptotic Pathways Linked to Endocrine System as Potential Therapeutic Targets for Benign Prostatic HyperplasiaLetteria Minutoli, Mariagrazia Rinaldi, +10 authors Antonio MicaliInternational journal of molecular sciences2016Benign prostatic hyperplasia (BPH) is a chronic condition common in older men that can result in bothersome lower urinary tract symptoms. The molecular mechanisms and networks underlying the development and the progression of the disease are still far from being fully understood. BPH results from smooth muscle cell and epithelial cell proliferation,… (More)


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【クメールの微笑み】travel collections (Travelog)
This is a summary of all the Logbooks (Travelogs) related to クメールの微笑み that we have available. Please go ahead and click on them if you want to read their contents. Does reading about クメールの微笑み make you want to go traveling? In that case let's start planning your next trip!
2011-12-15 - 2011-12-16


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Dawson Silver & Black Leaner Mirror
This Contemporary mirror features an Art Deco styled rectangular wood frame. The outer border is a tiered design with an antique silver finish with a smooth black inset. Its oversized stature makes it perfect for leaning against the wall.
Dimensions: 38" x 86"
Brand: Howard Elliott
Dimensions: 38" x 86"
Brand: Howard Elliott
Have a question about this product or looking for wholesale pricing? Please use the form below, include the quantity and delivery zip code so we can prepare a quote.
Returns accepted within 14 days of delivery. Please see Return Policy for details.