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Claire Bowman
this wiki
|Claire Bowman
|Vital statistics
|Claire Bowman
|Physical description
|Hair color
|Copper red
|Eye color
|Noah, Annie, Rex
|Further info
|First appearance
|"Operation: Wingman"
|Portrayed by:
|Danica McKellar
|Images | Quotes
Claire Bowman is a teenage girl that attends Benjamin Franklin High School. She is close friends with Annie and has gone on several double dates with Noah, Annie, and Rex.[1]
Season One
Operation: Wingman
Noah and Rex went out on a double date with Claire and Annie, but with a Rabbit E.V.O. out on the prowl to get Rex, things did not go as planned. Claire, at first, believed that her prom night was ruined. Eventually they helped Rex defeat the rabbit and kill it. Unfortunately, she reached her prom at the exact time it ended. Later, she admitted to Noah that that night was one of the most fun nights she had ever had.[1]
Season Two
Claire later went on another double date with Rex, Noah, and Annie. The four planned to go to an abandoned hotel rumored to be haunted. After failing from watching a scary movie when she was frightened into Rex's arms, Rex and Noah's true intentions were to literally scare her into Noah's arms by the help of Caesar who would rig the hotel objects.
Eventually things turned out to be as bad as they expected when they learned that a real E.V.O. was haunting the hotel. Soon afterward, Claire overheard Rex's plan. Angry for a short time, she and Noah were trapped in an elevator. Revealing she had claustrophobia, Noah kept her calm while Rex and Annie helped defeat the E.V.O.[2]
Season Three
Guy vs. Guy
Noah took Claire on yet another date which was interrupted by Rex and Bobo's attempt to prank Noah which nearly nuked the city. Noah and Claire were able to disconnect the prank and prank Rex and Bobo for Doctor Holiday as punishment for Rex and Bobo breaking into her lab.
notice the ranch on fire.]]
Claire and Annie accompanied Noah and Rex on a trip to Argentina to see Rex's family ranch. Finding the place to be already claimed by an E.V.O. named Chiquito, Rex fought him out. To the group's dismay, they were close to being vacated by the Muchado, the judge of the county. Muchado was forced by Durango, Chiquito's brother and former owner of the land, to get rid of them. Refusing to let him have it, they made a deal saying if they could farm the ranch in time, the land would be theirs.
With the help of Internet on her phone, Claire agreed to farm the ranch along with the group. A small conflict came upon the two groups where Chiquito and Durango tried to sabotage the group. Fortunately, Claire and her friends easily defeated them. The farming was done just in time for the agreement to be null and void.[3]
Claire is a positive girl with a calm personality, and is often seen smiling. She is very intelligent, as demonstrated by her knowledge of complex scientific subjects. She also seems to be clever.
Physical appearance
Claire is a fair skinned girl that has long copper red hair and dark green eyes. Noah stated that she is one of the prettiest, most put-together girls in his high school.[1]
When going to the prom, Claire wore a long, cream colored prom dress. On her second appearance she wore her usual attire: a long sleeved light blue shirt covered by a white thin jacket. When going out on a date with Noah, she wore a plum colored dress with the same colored heels. When going to Argentina, she wore a green tank top with jeans and a large floppy sun hat.
Noah Nixon
Noah has a crush on Claire. They have gone on double dates to the prom before with Rex and her best friend Annie. Despite her claustrophobia, Claire felt completely safe around Noah when they were trapped in an elevator. They have almost kissed once.[2]
Annie is Claire's best friend. However, she was completely oblivious to Annie's supernatural clumsiness.[1] It is hinted, however, that Claire now knows of Annie's clumsiness since she used it to her advantage when battling Chiquito and Durango.[2]
Rex Salazar
Claire was pleased to have Rex as Annie's date, since it was hard to find her any. During the prom, she blamed Rex as the cause of the chaos, unaware that Annie was the actual cause.[1] Later, she viewed Rex as a hero.[2]
Season One
- 111. "Operation: Wingman"
Season Two
- 209. "Haunted"
Season Three
- 306. "Guy vs. Guy" (non-speaking)
- 315. "Hermanos"
- Claire is claustrophobic.[2]
- In her sophomore year, Claire studied physics.[2]
- She reads science journals.[2]
- According to Noah, she only goes out with college boys and drummers.[1]
- Claire is a character whose clothing has changed the most throughout the series.
- Fred Savage, Noah's voice actor, and Danica McKellar previous played opposite each other as Kevin Arnold and Winnie Cooper on The Wonder Years.


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*Titans quarterback Vince Young vs. Cowboys defense: Young has come a long way since he made his first career start against the Cowboys in 2006.
When Young first broke into the league, his attitude was more of a runner than a passer. Young's throwing motion will never be confused with a classic, dropback quarterback. It always drove me crazy when coaches said "We can fix his throwing motion." It didn't work with Kerry Collins or a guy like Drew Henson. Young does not throw the ball overhand but more three-quarters style and with a flick of the wrist.
The Titans like to run routes across the field and inside where he can make easier throws. Offensive coordinator Mike Heimendinger tries to make this offense as easy as possible for Young to make the right reads and throws.
Where the Cowboys need to try to affect Young in this contest is two areas: attacking the middle of the pocket and getting their hands up when they are along the line of scrimmage.
Young has the mobility to break tackles from the outside; teams have had success is pressuring him in his face. A matchup to watch inside is Titans center Eugene Amano on Jay Ratliff and nickel rusher Stephen Bowen. In my view, Amano is the weakest of the Titans' linemen and should be attacked.
If the Cowboys can hold running back Chris Johnson in check, the focus of the Titans attack then falls on the shoulders of Young to make plays on a consistent basis.
*Cowboys guard Leonard Davis vs. Titans defensive tackle Jason Jones: The Titans' defense doesn't have the stars it once had rushing the passer, but they still get a tremendous amount of pressure with this current group.
Jones is the type of player than tends to give Davis fits. He is mobile, quick and athletic. Davis tends to struggle with these types because he doesn't always move his feet. He will struggle when these defenders attack his shoulder and he has to adjust. When Davis gets in trouble, he overextends and tries to block off balance.
Jones is not a powerful player and there is no way that he can go toe-to-toe with Davis run or pass and think that he will have success. The Titans like to get their linemen on the move, so Davis cannot allow Jones to be a factor in the middle of the pocket and in the running game.
If Davis does struggle, there is a good chance the Cowboys will suffer some negative plays on offense.
*Cowboys receivers vs. Titans cornerback Cortland Finnegan: There are going to be some great matchups across the board in this game but, this is the one I am really going to pay very close attention to.
Finnegan is one of the top five cover men in the NFL. He is not the biggest guy, but he has outstanding talent. He plays with an ease of movement and skill.
Finnegan is a hard man for a receiver to run away from because of his burst and acceleration. He plays very tight coverage and is hard to fool. Sometimes you find cornerbacks guessing on the routes, but not this guy. He is very smart and he has a great feel of how to read and play routes.
Finnegan has good ball skills and the hands to make a quarterback pay for their mistake. In the last two seasons, he has had five interceptions each year. He is a willing tackler and not afraid to stick his nose in the action.
In the past, the Titans have used Finnegan as a blitzer off the edge. In the Broncos game last week, he got his first sack of the season on a third-and-15 play.
I can see the Cowboys trying to attack rookie corner Alterraun Verner, who is not a bad player but nowhere as productive as Finnegan. If the Cowboys do have success on Finnegan on Sunday, the Titans' defense might be in trouble.


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6 days ago
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Please bear in mind that PC gaming encompasses thousands of hardware, software and driver configurations. It's frustrating to experience performance issues in any game, but not generally an indication that the particular problem is universal.Reply
This has nothing to do with hardware configuration. The game has a universal problem with its mouse input. It is absolutely awful and worse than Mankind Divided.
The frame pacing issues make this game a jittery mess when playing with a mouse. The only way to have a completely smooth experience when looking around is to use a controller.
As soon as your framerate goes below your set refresh rate the game jitters like crazy. GSync or no GSync.
Sorry to hear you're having issues. It sounds like Windows 10 store users are having quite a different experience to Steam users at launch, which is something we couldn't have predicted in this port review.
Generally we use campaign rather than online modes for port reviews in order to compare repeatable scenes at different graphics settings, and the nature of an online shooter means it'd simply be impossible to grab screenshots of the same event during a multiplayer match at different presets. The same goes for the screenshots comparing the original and remastered game - it'd be impossible.
Note that this is a port review, rather than the traditional review type - here we analyse graphics options and their performance impact. If this were a more holistic review then analysis of netcode and online user experience would be crucial, but the objective's slightly different here.
That said, I've added a disclaimer to this piece explaining our methodology more clearly, and will do so for future port reviews of games with multiplayer modes.
It's a frustrating pricing strategy, isn't it? Microsoft would argue that the higher £50 price point accounts for the fact you're getting digital copies for box XBO and PC all in one, but who knows how many players will ever use more than one version.Reply
Link me! Is that for FM 16? Always up for trying a new tactic.Reply
I mean, aren't they both isometric RPGs from the early 2000s with hack 'n' slash combat and randomly generated loot? Come on.Reply
So you'd compare Baldur's Gate 2 (lots of random loot in that game too) to Diablo 2 as well?
Point is, you can compare Diablo 2 (which, by the way is considered the golden standard in that type of Diablo like that) to games like Van Helsing, Grim Dawn, Sacred 2, Nox, Torchlight, Titan Quest, but most assuredly not standard RPGs that is just made with an isometric viewing point, like Fallout, Baldur's Gate, Icewind Dale, Divine Divinity, Ultima 7, and so on.
But this feature is about people playing games they don't like. It doesn't really matter why they didn't like them, just that they didn't but continued to play. If this were a review of Divine Divinity I'd see your point.Reply
I see what you're saying, but the point is that this is still a serious gaming news & review website, and their journalists just made a completely dumb comparison which is not only unjust towards a game, it portrays a level of unprofessionalism (is that even a word) in the article itself, as these reviewers are supposed to at least know what they're talking about. In my mind anyway. They are after all professionals, and remarks such as this detracts from not only the article, but the competency of the reviewer in question and indeed the site itself for letting it slip through in a serious gaming article.
Honestly, it invalidates a lot of the arguments made when you can't even get the basic things which you draw your conclusions from right.
Maybe I'm just overthinking it, but stuff like that makes me lose an ounce of respect for the site, because not only did Divine Divinity get good criticism from the players and professionals alike, the whole comment is just...ugh, I don't know how to best describe it without repeating myself.


text:
Bulgaria Under-21 0 England Under-21 2
Another "beep, beep" to signal a job very well done. Stuart Pearce said this week that the first text to arrive on his mobile phone after a victory is a message of congratulations from Steve McClaren. The praise will be deserved after England Under-21 won last night to secure maximum points from their opening two qualifying matches for the 2009 European Under-21 Championship.
The biggest danger to England's prospects of reaching the finals in Sweden is their own ability. The more impressive that Pearce's charges look, of course, the more likely that McClaren, the England head coach, will promote them


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Today, the House passed H.J. Res. 69 sponsored by Rep. Don Young (R-AK). This joint resolution of disapproval under the Congressional Review Act will overturn the U.S. Fish and Wildlife Service (FWS) ......
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In July 2014, we published our in-depth review of the GP workforce. Commissioned by the Department of Health and Health Education England, the review assesses:
- current workforce numbers to forecast supply
- key drivers affecting workforce demand
- regional variations in demand.
The review offers suggestions to the commissioners for future workforce planning and addresses issues such as GP workload, the 2016 recruitment target, as well as wider issues around primary care delivery.
Read and download the full report.
Read and download the report executive summary.
In view of the long-term nature of the projections, we have used horizon scanning and future scenario generation in our analysis. A diverse group of stakeholders have helped to identify the driving forces that may impact on GP supply and demand over the medium to longer term.
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text:
|Publication number
|Publication type
|Application number
|Publication date
|Apr 29, 1986
|Filing date
|Apr 1, 1985
|Priority date
|Apr 1, 1985
|Fee status
|Publication number
|Arthur J. Peters, Eugene A. Marks
|Original Assignee
|Bourns Instruments, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (20), Non-Patent Citations (2), Referenced by (84), Classifications (9), Legal Events (9)
|External Links: USPTO, USPTO Assignment, Espacenet
The present invention relates generally to the field of pressure sensors and transducers. More particularly, it relates to a capacitive pressure sensor of the type in which the capacitive plates are formed from wafers of conductive silicon, at least one of which is flexed in response to an applied pressure, whereby the capacitance is varied as a function of the applied pressure.
Capacitive pressure sensors are becoming increasingly popular for a number of applications due to their high pressure sensitivity and relatively low temperature sensitivity, as compared to, for example, pressure sensors of the piezoresistive type. While a number of types of capacitive pressure sensors have been developed, the increasing needs for lower cost, simpler structure, and smaller size have resulted in growing interest in the silicon capacitive pressure sensor.
In a capacitive pressure sensor, a pressure-responsive diaphragm forms one of the two plates of a capacitor. Pressure-induced deflection of the diaphragm varies the distance between the two plates, thereby changing the capacitance of the sensor. The change in capacitance, in turn, creates a change in an electrical output signal of the circuit which contains the sensor. For example, the change in capacitance can create a frequency shift which can be translated, by suitable circuitry, into a voltage that is a function, ultimately, of the applied pressure.
In the silicon capacitive pressure sensor, the plates of the capacitor are formed by wafers of silicon, appropriately doped to achieve a suitable degree of conductivity. One (or, possibly, both) of the wafers is configured into a pressure-responsive diaphragm. Spacing between the wafers is maintained by a suitable insulating material, usually glass, to which the wafers are joined by a variety of means, e.g., electrostatic or anodic bonding, glass frit, and metal film brazing. Examples of such devices are disclosed in the following U.S. patents:
U.S. Pat. No. 3,634,727--Polye
U.S. Pat. No. 4,405,970--Swindal et al.
U.S. Pat. No. 4,415,948--Grantham et al.
Of increasing importance in silicon capacitive pressure sensors are the needs to lower the costs and reduce the size of the sensors. Both goals can be achieved through batch-processing techniques. Until fairly recently, however, batch-processing techniques have been applied primarily to piezoresistive pressure sensors and to capacitive pressure sensors of the type employing a conductive silicon diaphragm bonded to a glass or ceramic substrate, with a metallized surface on the substrate providing one capacitor plate, and the diaphragm providing the other. Examples of such "silicon-on-glass" batch-processed capacitive pressure sensors are disclosed in U.S. Pat. No. 4,386,453 to Giachino et al., and in Lee et al., "A Batch-Fabricated Silicon Capacitive Pressure Sensor with Low Temperature Sensitivity", IEEE Transactions on Electron Devices, Vol. ED-29, No. 1, January, 1982 (pp. 42-48). The "silicon-on-glass" technology, however, does have some drawbacks. For example, an electrical connection must be provided through the substrate to the metallization on its inner surface that forms one capacitive plate, thereby adding to the complexity of the fabrication process. Also, the substrate material must be carefully selected to provide both good dielectric qualities and close thermal matching to the silicon diaphragm. Thus, a borosilicate glass is usually selected, its coefficient of thermal expansion being workably close, although not identical, to that of silicon.
The above-referenced patents to Swindal et al. and to Grantham et al. disclose recently-developed methods for batch-process fabrication of capacitive pressure sensors employing silicon wafers for both of the capacitor plates. The sensors made by these methods are relatively low in cost and small in size (i.e., approximately 0.5 cm in diameter), with the use of conductive silicon as the capacitor plates allowing external electrical connection to the plates to be made simply by metallizing the external surfaces of the silicon wafers. In these sensors, spacing between the plates is provided by borosilicate glass structures formed on one of the wafers, with the second, pressure-responsive silicon wafer being bonded to the borosilicate glass by "field-assisted" (electrostatic) bonding.
While the sensors and fabrication methods disclosed in the aforementioned patents to Swindal et al. and Grantham et al. offer some advantages in terms of low cost and small size, futher improvements in the technology have been sought. For example, as the diameter of the capacitor plates decreases, the total capacitance of the sensor decreases proportionately, unless the plates are brought closer together. In the prior art, as exemplified by the Swindal et al. and Grantham et al. patents, the spacing between the plates is on the order of 2 to 3 microns. To provide either substantially greater capacitance or substantially smaller plate diameter (either or both of which may be desirable in certain applications), it is necessary to decrease this spacing by as much as an order of magnitude.
As the spacing between the plates decreases, the need to control the spacing with precision increases significantly. In the prior art, this is accomplished by a borosilicate glass layer deposited on one of the silicon wafers. Thus, the precision of the spacing between the plates is dependent upon the precision with which the thickness of the deposited glass layer can be controlled. According to the aforementioned patent to Swindal et al. this precision is �5%. It would thus be an improvement in the art to achieve at least comparable precision in plate spacing without the additional complexity of a precision glass sputtering process.
Another limitation in the prior art is the use of borosilicate glass as the spacing medium between the two silicon plates. Borosilicate glass is used because the relative thickness of the spacing medium necessitates a material having a coefficient of thermal expansion that is close to that of monocrystalline silicon, in order to prevent the development of structural flaws when the sensor is subjected to widely varying temperatures. Borosilicate glass, however, is prone to a deterioration in structural integrity at temperatures in excess of about 500� C., making such sensors unsuited to many high-temperature applications.
Thus, it can be seen that there is a need for a batch-processing method for fabricating silicon capacitive pressure sensors that yields sensors with small physical dimensions and acceptable capacitance levels, while maintaining low cost and precise dimensional control. The sensors so made should, preferably, be suitable for use in high-temperature environments, and in environments where drastic temperature changes may be experienced.
Broadly, the present invention is a batch-process method of fabricating silicon capacitive pressure sensors comprising the steps of (1) providing first and second wafers of conductive semiconductor material (e.g., N- or P-doped silicon); (2) oxidizing a surface of each wafer to form a layer of oxidized semiconductor material; (3) removing a predefined area of the oxidized layer from a first one of the wafers, leaving an exposed surface of unoxidized semiconductor material in the predefined area; (4) superimposing the second wafer onto the first wafer so that the oxidized layer of the second wafer is in contact with the oxidized layer of the first wafer around the predefined area; (5) fusing the two wafers together; (6) metallizing selected areas of the outer surfaces of the two wafers to form electrical contacts; and (7) cutting the fused-together wafers into individual pressure sensors. Each of the individual sensors has a pair of opposed conductive semiconductor plates separated by a dielectric gap formed between the predefined unoxidized area of the first wafer and the opposed oxidized layer of the second wafer. One, or possibly both, of the plates is formed (either in its initial thickness or by etching) to be deflectable into the gap in response to the application of pressure to its outer surface.
The present invention also consists of the capacitive pressure sensors fabricated by the above-defined method. In a broad sense, these sensors may be defined as a pair of conductive semiconductor plates separated by a layer of material comprising essentially the fused oxide of the material from which the plates are made.
The present invention, as described above, has several significant advantages. Most obviously, the batch-processing fabrication yields very small pressure sensors (i.e., on the order of 2.5 to 5.O mm in width and a millimeter or less in overall thickness), at low cost. Moreover, since the spacing between the plates is determined by the thickness of the oxidized layers, and since this thickness can be precisely controlled by well-known techniques, precise dimensional control of the sensors is readily achieved. Furthermore, these oxidizing techniques can provide thicknesses of the oxidized layer as small as 0.1 micron, thereby allowing the sensors to be made with spacing between the plates on the order of one micron or less. Thus, capacitances that are relatively large in proportion to the physical dimensions of the sensor can be readily achieved. In addition, with the thickness of the oxide layer separating the plates being so small, the sensor is better able to withstand exposure to high temperatures and to widely varying temperatures with little likelihood of structural flaws developing as a result of the difference in the respective coefficients of thermal expansion between the plate material and the intervening oxide layer.
In the preferred embodiment, described more fully below, the plates are formed from monocrystalline silicon, with the intervening oxide layer being comprised essentially of silicon dioxide (SiO2). An advantage of this specific embodiment is that the SiO2 layer is able to withstand temperatures well in excess of 1000� C. without structural deterioration. Thus, the good high-temperature characteristics of SiO2, coupled with the thinness of the SiO2 layer, makes silicon sensors constructed in accordance with the present invention well-suited to high-temperature applications.
Thus, the present invention provides small, low-cost, and reliable capacitive pressure sensors with advantageous thermal characteristics. Moreover, the sensors produced in accordance with the present invention are structurally simple, thereby contributing to their reliability and to the low cost of manufacture. The batch-processing techniques employed in the fabrication method also assure a high degree of uniformity of physical, electrical, and thermal characteristics. ln addition, the present invention affords greater sensitivity, as compared with prior art batch-processes capacitive sensors, as a result of greater capacitance per unit area. These advantages, as well as others, will be better appreciated from the detailed description that follows:
FIGS. 1 through 6 are simplified perspective views of a pair of monocrystalline silicon wafers showing the steps of fabricating silicon capacitive pressure sensors in accordance with the method of the present invention;
FIG. 7 is a cross-sectional view of a fused-together pair of silicon wafers formed into a completed matrix of sensors prior to the separation of the matrix into individual sensors;
FIG. 8 is a simplified, cross-sectional view of a completed pressure sensor made in accordance with the present invention;
FIG. 9 a view similar to that of FIG. 8, showing a modified form of the completed sensor; and
FIG. 10 is a semi-schematic diagram of a press used to fuse the two wafers which form the sensors, as shown in FIGS. 4 and 5.
Referring now to the drawings, FIG. 1 illustrates, in somewhat idealized form, a typical wafer 10 of monocrystalline silicon, fabricated by techniques well-known in the art. The wafer 10 is grown in the 1-0-0 orientation, with a thickness between 0.25 mm and 0.40 mm. The silicon is doped to attain a bulk resistivity of about 0.005 to about 0.010 ohm-centimeters, with either P-type or N-type dopants being suitable. As is typical with commercially supplied silicon wafers, the wafer 10 has a major flat 12, and a minor flat 14 at 90 degrees from the major flat 12. Both major surfaces of the wafer 10 are polished by well-known techniques.
The next step, as illustrated in FIG. 2, is to deposit an essentially pure silicon dioxide (SiO2) layer 16 on the major surfaces of the wafer 10. This is accomplished by thermal oxidation processes which are well-known, comprising the exposure of the wafer 10 to an elevated temperature (1000� C. to 1200� C.) in an oxygen-rich environment. The thickness of the SiO2 layer 16 is preferably about 1.0 to 1.2 microns. This thickness can be precisely controlled, since the oxidation rate for silicon as a function of temperature is well-known.
In FIG. 3, the wafer 10 is shown after it has undergone a lithographic process, using standard masking, photo-resist, and etching techniques, to form a matrix of predefined areas 18 wherein the SiO2 layer has been removed, leaving exposed (uncovered) silicon. The pattern of uncovered silicon areas 18 is aligned in parallel with the wafer flats 12 and 14, with the uncovered areas 18 preferably being square or rectangular. The wafer surface surrounding and between the uncovered areas remains, of course, covered by the SiO2 layer 16.
A second silicon wafer 20 (FIG. 4) is provided with physical dimensions and electrically-conductive properties similar to those of the first wafer 10. The second wafer 20 thus has a major flat 12', and a minor flat 14', a thickness of between 0.25 and 0.40 mm, and a bulk resistivity of about 0.005 to 0.010 ohm-centimeters. Its major surfaces are polished, and it is thermally oxidized, as was the first wafer 10, to form an essentially pure SiO2 layer 22. The SiO2 layer 22 on the second wafer 20, however, is provided to a thickness of only about 0.10 to 0.12 microns; that is, about one-tenth the thickness of the SiO2 layer 16 on the first wafer.
The second wafer 20 is then superimposed on the first wafer 10, with the SiO2 layer 22 of the second wafer being brought into contact with the etched SiO2 layer 16 of the first wafer around and between the predefined areas 18 of exposed silicon on the first wafer. The flats 12' and 14' of the second wafer 20 are respectively aligned with the flats 12 and 14 of the first wafer 10. The superimposed wafers 10 and 20 are then placed in a press, as will be described in more detail below, and are subjected to sufficient heat and pressure to fuse the two SiO2 layers 16 and 22 together. Typically, pressures on the order of 1000 psi and temperatures on the order of 1000� C. are employed. The result is a "sandwich" of the silicon wafers 10 and 20 with an intervening unified layer 24 of silicon dioxide, as shown in FIG. 5. At this point, the SiO2 remaining on the major exterior surfaces (i.e., top and bottom surfaces 26 and 28, respectively), should be removed by conventional chemical solvents, such as hydrofluoric acid.
Formation of pressure-responsive diaphragms 30 in the upper surface 26 of the second wafer 20 is illustrated in FIG. 6. This is accomplished by well-known photo-resist, masking, and chemical etching techniques, using an anisotropic etchant, such as potassium hydroxide dissolved in water and heated. The diaphragms 30 are formed in a matrix which is aligned and in registration with the matrix of exposed silicon areas 18 on the first (lower) wafer 10, so that each diaphragm 30 overlies one of the exposed silicon areas 18. For many applications, the silicon in the area of the diaphragms should be etched to provide a diaphragm thickness of about 50 microns. This thickness can be varied, however, to accommodate different pressure ranges. After removal of the photo-resist compound, the structure shown in FIG. 6 results.
The next step is the metallization of selected areas of the top surface 26 and the bottom surface 28 of the sandwiched structure to form upper and lower metallized layers 32 and 34, respectively, as shown in FIG. 7. The metallization can be deposited by well-known techniques, such as vacuum-deposition and electroplating, and may be formed of aluminum, chromium, or nickel. A second metallization layer (not shown) of gold may be deposited as an outermost metallized layer on both the top and bottom surfaces, in order to provide an optimal medium for the wirebonding of electrical leads.
Finally, the matrix of sensors forming the sandwiched structure of FIG. 7 is cut up or "diced" into separate, individual silicon capacitive pressure sensors, one of which is shown in FIG. 8. The completed, discrete sensor, designated by the numeral 40 in FIG. 8, comprises a lower silicon plate 42 and an upper silicon plate 44, spaced apart and joined to each other by a silicon dioxide layer 46. Removal of the SiO2 from the predefined areas 18 on the first (lower) wafer 10 leaves a dielectric gap 48 underlying the diaphragm 30 formed in the upper silicon plate 44, as described above. The thin SiO2 layer 22 deposited on the second (upper) wafer 20 provides a dielectric layer 50 on the underside of the diaphragm 30. This dielectric layer 50 increases the capacitance of the sensor 40, as well as its dielectric breakdown voltage, while also preventing a short circuit from occurring should the diaphragm 30 come into contact with the lower silicon plate 42. When the sandwiched structure of FIG. 7 is cut into individual sensors, portions of the metallized layers 32 and 34 become metallized contacts 52 and 54 on the top and bottom surfaces, respectively, of the sensor 40.
An ambient pressure port (not shown) may optionally be provided into the gap 48 (which functions as a reference pressure chamber) through the lower plate 42, to provide ambient pressure as the reference pressure for measurements of gauge pressure. For absolute pressure sensors, the gap 48 is evacuated during the above-described fusing procedure.
Dimensionally, the sensor 40 is approximately 2.5 mm in width, with an overall thickness in the range of about 0.5 to 1.O mm. The separation between the plates provided by the dielectric gap 48 is on the order of one micron or less.
For some applications, particularly where higher pressure ranges may be experienced, the step of etching the diaphragms 30 into the second (upper) wafer 20 may be eliminated. Instead, the second wafer may be provided with uniform thickness which is measurably less than the thickness of the first (lower) wafer 10. The result is a sensor having two conductive silicon plates, each of substantially uniform thickness, but with one plate sufficiently thin to be deflectable in response to pressures within the range to be measured. Different plate thickness could be used, depending upon the measured pressure range.
FIG. 9 illustrates a modified form of the sensor, designated by the numeral 60. The modified sensor 60 is, in most respects, identical to the sensor 40 of FIG. 8, having lower and upper plates, 42' and 44', respectively, and an intervening silicon dioxide layer 46'. Like the sensor 40, the modified sensor 60 has a diaphragm 30' etched into the upper plate 44', a dielectric gap 48' underlying the diaphragm 30', and a thin dielectric layer 50' of SiO2 on the underside of the diaphragm 30'. Upper and lower electrical contacts, 52' and 54', respectively, are provided as described above.
The principal difference between the sensor 40 of FIG. 8, and the modified sensor 60 of FIG. 9, is the formation of a second diaphragm 62 in the lower plate 42' of the sensor 60. The second diaphragm 62 is provided on the opposite side of the dielectric gap 48' from the first diaphragm 30', and it is formed by applying the same masking, photo-resist, and chemical etching techniques, used to form the first diaphragm 30'. Provision of two diaphragms on opposite sides of the dielectric gap provides the sensor 60 with increased sensitivity.
For any embodiment described above, protection of the sensor from chemical interaction with the ambient medium can be provided by covering the exposed silicon surfaces with a deposited or thermally-grown silicon dioxide film 64, using a conventional SiO2 deposition technique after the diaphragms 30 are etched. Alternatively, the sensor can be coated with a protective material such as silicon nitride, or even a varnish, as is known in the art.
FIG. 10 illustrates a press 70 suitable for fusing the wafers 10 and 20 together, as shown in FIGS. 4 and 5. The press 70 comprises a pair of graphite susceptors 72a and 72b attached to upper and lower platens 74a and 74b, respectively. The silicon wafers 10 and 20 are placed between the susceptors 72a and 72b, with the oxidized surfaces 16 and 22 of the wafers facing each other. The wafers are pressed together between the susceptors 72a and 72b, while heat is applied by the energization of an RF coil 76 surrounding the operative part of the press. By applying a pressure of approximately 1000 psi, at a temperature of approximately 1000� C., the SiO2 layers 16 and 22 of the wafers are sufficiently softened to allow them to fuse together. The above-specified temperature and pressure are preferably maintained for approximately five minutes for a good bond to be formed between the contacting SiO2 layers.
The fusing procedure should be performed in an inert atmosphere to prevent further oxidation of the wafers. Accordingly, an inert gas, preferably nitrogen, is circulated through the interior of the press 70 from a gas inlet 78 to one or more outlets 80. If absolute pressure sensors are to be produced, the fusing procedure should be performed in a vacuum, with the interior of the press being evacuated by well-known techniques.
From the above description, it can be seen that the method of the present invention produces silicon capacitive pressure sensors that are inexpensive, small in size, and well-suited to high-temperature applications. Furthermore, the sensors so produced have very precisely-controlled dimensions. Also, because a very narrow dielectric gap can be produced with precision, relatively-high capacitances can be achieved, despite the small area of the plates. The relatively-high capacitance per unit area, in turn, provides increased pressure sensitivity. The fabrication method, itself, is relatively simple, requiring no exotic materials, and using conventional chemical etching techniques.
Although a preferred embodiment of the invention has been described, various modifications will suggest themselves to those skilled in the pertinent arts. For example, the sensors can be configured in any of a variety of shapes; circular, for example. Also, although the preferred embodiment has been described as constructed primarily of silicon, it is possible that other semiconductor materials can be employed, with some modifications of the fabrication process dictated by the choice of semiconductor material. These and other modifications should be considered within the spirit and scope of the invention, as defined in the claims which follow.
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|U.S. Classification
|361/283.4, 427/79, 73/724, 29/25.41, 361/283.1
|International Classification
|Cooperative Classification
|European Classification
|Apr 1, 1985
Owner name: BOURNS INSTUMENTS, INC., RIVERSIDE, CA A CORP OF D
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RUSH TO NOWHERE By Howard Lewis Russell. 287 pp. New York: Donald I. Fine. $17.95.
First you recognize the elements: Dancer, an aspiring Dixie-born writer, works in advertising to pay for his daily Dove Bars and overpriced walkup in Brooklyn, but after numerous rejections by the city's finest publishing houses, he feels he's running in place, watching a world of New York characters go by - advertising geniuses, androgynes, downtowners, anorexics and drug purveyors.
You figure it's McInerney and Janowitz revisited - the smart-alecky blase, the nouveau mores, the underlying despair. You're immersed in yet another tale about a young person of some talent and much ambition, adrift in New York. Dancer (that seems to be his only name) has a creative block and a mysterious source of pain, and you expect either a static, wistful ending or a breakthrough.
But something seems out of whack in ''Rush to Nowhere,'' and when you come across the nightclub scenes, you know just what it is. Trying to portray his hero as a chic bohemian, Howard Lewis Russell, himself a young advertising man, shows Dancer mingling with the beau monde at the Palladium and the Limelight. Now, no true cognoscente would make such a mistake - these clubs are definitely passe. So you start to see Mr. Russell as a poseur, feigning intimacy with the hip and wanting so much to appear ''in'' that he disqualifies himself.
It dawns on you. This first novel is by a spokesman for those who are always rushing to catch up with the cool people and arriving too late. It all begins to fit. Dancer's observation that Brooklyn is ''aesthetically deprived,'' his obsession with the filth and nuttiness of New York - these are commonplaces only an outsider would notice overtly. You're sure Dancer's story will please the folks who are still down on the farm much more than those who have actually seen Paree.
Now you realize that you're reading nothing but an old, old story in modish disguise. It's a screwball comedy from the 1930's, or ''How to Marry a Millionaire'': something that makes you expect to win the lottery. The plot bops along like this: After Dancer undergoes a series of zany experiences beyond his control - witnessing a murder, being robbed, partying at a rock star's funeral, almost being raped bedroom-farce style by his boss, earning $50,000 by stumbling into a drug deal - a beautiful, rich movie star falls for him and promises to make him a beautiful, rich screenwriter. Thus, without developing so much as a smidgen of self-knowledge, Dancer arrives.
You can't think of a floundering young person in New York who doesn't have a similar fantasy - to be rescued by a ravishing lover and transformed, presto, into a success. When the beautiful, rich movie star says, ''You like me not because of who I am but because I'm me. That means a lot,'' you realize how complete the fantasy is -Dancer isn't just lucky, he's worthy! It isn't that you don't like happy endings, but next time you'd rather watch an old movie.


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Ryan Lavarnway up; Kevin Youkilis to DL
Red Sox catcher/DH slugger Ryan Lavarnway will join the team in Kansas City and Kevin Youkilis is going to do some DL time because of a sore back. We'll have more details as they become available.
Lavarnway, who turned 24 earlier this month, has split the season with Class AA Portland and Class AAA Pawtucket, playing 55 games with the Sea Dogs then being promoted for 55 games with the PawSox. He has 30 home runs and 85 RBIs.
Overall, he has hit .293/.372/.559 in the minors this season.
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Chilis is "like no place else," with their comfortable yet vibrant setting, friendly service, and boldly flavored dishes.
American meets Southwestern fare when you're dining at Chilis. Burgers and fries, baby back ribs, tacos, and burritos are all popular choices at this eclectic establishment.
Chili's Barceloneta is a bar and grill that serves American and Tex-Mex dishes. When deciding how to dress for this restaurant, consider that the style of the food and service is very casual. This dining option's open during both dinner and lunch, so don't hesitate to pay this place a visit. You might fall in love with a local favorite.
Located in Barceloneta, Chili's Barceloneta is at 1 Prime Outlets Boulevard. For locals and vacationers staying in and around Arecibo, this dining establishment can be reached to the east of the city.
With the chance to visit at least one attraction just a short distance away from the restaurant, this can be a pleasant place to experience. One of the closest places of interest is Parque Infantil.
One experience awaiting explorers of the vicinity is Mar Chiquita Beach, a nearby beach, which is a suitable place to unwind after a meal.
If you're in the mood for another local restaurant with some similar menu items and/or a similar price range, there is no shortage of nearby options to consider, including KFC Barceloneta.
But then again, if you're looking for something different, this part of Puerto Rico provides a wide range of restaurants that will satisfy all kinds of diners. For example, you can also try Chinese cuisine at Big China Restaurant, which isn't very far away.
Chili's Barceloneta accepts major credit cards. You'll know you've found Chilis when you see the big red chili pepper on the wall.
Location: 1 Prime Outlets Boulevard, Barceloneta, Puerto Rico
Phone: (787) 846-1000
Website: http://chilispr.com/
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Basic Office Technology
Polish the No. 1-trait employers seek – computer skills. This course will equip you with a solid foundation of the most up-to-date technology skills in an ever-changing discipline. It will teach you the fundamentals of computers, software, and the Web. In addition to gaining a practical understanding of the computer, through application and instruction, you will acquire the skills to create documents, presentations, worksheets, and databases using the various Microsoft Office products.
More Information and Registration
High school diploma or equivalent, completion of our Basic Skills Assessment and submission of the Program Application. Working knowledge of computers and access to a computer and the Internet are required.
The Basic Skills Assessment and Program Application are located online. The instructions are here. You will be directed to the program application after completing the skills assessment.
- Technical integration of multiple devices
- Microsoft Office 2013 products
- Hardware, software and the Internet
- Security safety, ethics and privacy
- Desktop computers
- Notebook computers
- Smartphones
- Portable media players
- Digital cameras
This course is ideal for adults desiring to sharpen and acquire new skills in preparation of returning to the workforce.
This course complements our Administrative Professional, Bookkeeper and QuickBooks programs.
- Interest-free payment plans available on a case-by-case basis
- VA Education Benefits
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- Continuing education loans
"The course was excellent. The instructor made it very easy to understand. I would definitely recommend this course to others."
Lindsey Hinde, graduate
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Before she was inspired to go into information security, Annette Reed was a paralegal for 10 years. After researching the profession for months, she knew she wanted to make it her career. She... read more→
ASP, HTML/CSS, Java and jQuery – learn all of this and more from Chandeka Ork, our newest Web Design & Development instructor. She joins John Pettibone in educating future website experts in... read more→
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— Georgia boasts about 280,000 tech jobs, according to Technology Association of Georgia.
— Atlanta has added 25,000 tech positions since 2010.
— Atlanta is currently ranked in the top 4 when it comes to high-tech jobs, and the top 10 for tech industry growth.
— In the past five years, Atlanta's tech industry has grown 21%, and the talent growth rate is at 21.2% – making it the 6th-fastest growing market in the nation.
Source: AJC


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By: Gladys Garay and Oscar Guineo
310 pages, col photos
Language: Bilingual in English and Spanish
This book includes details of the history, hydrology and geology of the Torres del Paine National Park along with information on the 12 mammal and 104 bird species and the 118 plant species found there.
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Rely on this safe, powerful, and great performance high drain 18650 battery to power your mod. Warning: Do not short batteries. Do not expose lithium batteries to high heat. Do not charge lithium batteries in any conditions over 100 degrees f. Do not overcharge lithium batteries. Do not deplete lithium batteries below 2.5 volts.
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WARNING: Use of this product with nicotine-containing liquid will expose you to nicotine, a chemical known to the State of California to cause birth defects or other reproductive harm, and formaldehyde and acetaldehyde, chemicals known to cause cancer.
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The Global Finance Committee formulates strategic financial commitments and provides advice on and supervises the annual budgets, operating under these standard operating procedures (SOP).
Interested in volunteering for the Global Finance Committee? Contact Chairperson David Phillips.
Already a member of the Global Finance Committee? Visit the group page.
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2/21/2017Apply for an Earth Day or a World Environment Day Grant
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MU Legend is the highly anticipated action MMO and follow-up to MU Online. It features fluid and stunning hack 'n' slash combat, content that caters to both solo and party play, and a deep and intriguing world that will satisfy new players and fans alike.
Enjoy the freedom of playing as any class you like - on the same character! Once unlocked, all classes in Twin Saga are at your fingertips, any time outside of combat. Need more power to take down a tough enemy? Become a Mage! Your party needs a healer for the next dungeon? Break out the Cleric!
R4PG has released many cool plans for you to earn money through the internet, you can earn money online while sharing happiness with your friends.
Crowfall is a new type of massively multiplayer online roleplaying game (MMORPG). We call it a throne war simulator because it is a mix of a traditional MMO with a large-scale strategy game.
Some TOS players are afraid of getting reported for buying Tree of Savior silver, and now we offer a new trade method which is 100% safe and fast for those who need silver to buy items in game.


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Do Witchcraft in Honolulu, Hawaii
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