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Camp Verde News
Local news for Camp Verde, AZ continually updated from thousands of sources on the web.
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06 Dec 2005
Lohengrin, Vienna State Opera
Raphaela Papadakis seems to like 'playing with fire'. After her acclaimed performance as the put-upon maid, Anna, in Independent Opera's production of Šimon Voseček's Beidermann and the Arsonists at Sadler's Wells last year, she is currently rehearsing for the premiere this week of And London Burned, a new opera by Matt Rogers which has been commissioned by Temple Music Foundation to commemorate the 350th anniversary of The Great Fire of London.
By Shirley Apthorp [Financial Times, 6 December 2005]
In place of a swan, we see a toy truck, fluorescent yellow in a world of relentless grey, forlornly abandoned by the side of a pond.


text:
|Publication number
|Publication type
|Application number
|Publication date
|May 24, 2011
|Filing date
|Apr 21, 2008
|Priority date
|Apr 21, 2008
|Fee status
|Also published as
|Publication number
|Herbert Schäfer, Martin Franosch, Thomas Meister, Josef Böck
|Original Assignee
|Infineon Technologies Ag
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (21), Referenced by (2), Classifications (15), Legal Events (4)
|External Links: USPTO, USPTO Assignment, Espacenet
The present invention relates generally to semiconductor processing and more particularly to a process for the simultaneous deposition of two or more polycrystalline, monocrystalline, and amorphous layers with in-situ doping.
When semiconductor devices are formed in integrated circuits, the devices are coupled to each other through the use of back end of the line metal interconnect levels. The resistance and capacitance of these metal interconnect levels has a negative effect on device performance, especially at high frequency operation. Therefore, to minimize the influence of parasitic components (e.g., resistance, capacitance), layers of low electrical resistance and capacitance are used as electrodes to connect the overlying metal interconnect levels selectively to the individual active semiconductor elements.
These electrode layers are often comprised of monocrystalline silicon, polycrystalline silicon, and/or amorphous silicon and are doped as required to give them needed electrical conductivity. To form doped crystalline layers a semiconducting substrate (e.g. silicon) can be subjected to a series of chemical and thermal processing steps which modify the electrical properties of certain areas of the substrate. Typically, formation of the silicon layers is performed by first depositing undoped silicon. The undoped silicon is subsequently doped by means of ion implantation. Finally, a temperature step sometimes referred to as an anneal is used to heal implantation damages and electrically activate the dopant.
Depositing a single crystalline layer can be performed by first forming a seed layer and then epitaxially growing a layer with the same crystalline structure on top of the seed layer. Epitaxial silicon is usually grown using vapor-phase epitaxy (VPE), a modification of chemical vapor deposition (CVD). Molecular-beam and liquid-phase epitaxy (MBE and LPE) can also be used. The use of MBE and LPE is mainly done for compound semiconductors. During depositions performed by any of these methods, narrow faults in the underlying layer are often completely filled.
Doping places either specific amounts of dopant atoms into the crystal lattice structure of the substrate or a film deposited on the substrate. In general, the electrical characteristics (e.g., conductivity, resistivity) of a defined region of a semiconductor structure are a function of the concentration and depth of the dopants in that region. In order to obtain electrical devices having predictable and reliable electrical characteristics, a doping process is controlled to provide a desired concentration and depth for dopant atoms within the substrate. In the formation of an epitaxially grown electrode layer, implantation doping can cause device issues as the doping will not be able to extend to the bottom of the faults formed during deposition and as a result, the grown layers will not be uniformly doped.
In-situ doping, which introduces dopant atoms during the epitaxial growth process, provides advantages over implantation doping in terms of layer integrity. One common method of in-situ doping is by gas phase deposition (e.g., chemical vapor deposition (CVD)). With a CVD doping process, a deposition gas and a dopant gas are supplied to a process chamber of a CVD reactor. A substrate to be doped and the process chamber are maintained at a relatively high temperature. In the process chamber, the deposition gas and the dopant gas thermally decompose and deposit onto the substrate. The deposited film is thus a mixture of a deposition species and a dopant species. The dopant atoms move by filling empty crystal positions (i.e. vacancies) or alternately move through the spaces between the crystal sites (i.e. interstitial).
As an example of a prior art CVD doping process, polysilicon thin films are deposited along with a dopant on a silicon substrate. A suitable deposition gas for depositing polysilicon is silane. In general, the silane decomposes under the vacuum and the high temperature of the process chamber and deposits onto the substrate.
For in-situ n-type doping, common dopants include phosphorous and arsenic. These dopants respectively utilize dopant gases comprising phosphine (PH3) and arsine (AsH3) in a CVD doping process. However, as a result of utilization of any of these dopant gases for in-situ doping, the epitaxial deposition rate decreases considerably. Further, it is difficult to achieve dopant concentrations above 1e20/cm3 using in-situ doping. For in-situ p-type doping, a common dopant is boron which utilizes a diborane (B2H6) gas in a CVD doping process.
The following presents a simplified summary in order to provide a basic understanding of one or more aspects of the invention. This summary presents one or more concepts of the invention in a simplified form as a prelude to the more detailed description that is presented later and is not an extensive overview of the invention. In this regard, the summary is not intended to identify key or critical elements of the invention, nor does the summary delineate the scope of the invention.
The present invention relates to method for the simultaneous deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics. Other embodiments and methods are also disclosed.
The following description and annexed drawings set forth in detail certain illustrative aspects and implementations of the invention. These are indicative of but a few of the various ways in which the principles of the invention may be employed.
The present invention will now be described with reference to the attached drawing figures, wherein like reference numerals are used to refer to like elements throughout, and wherein the illustrated structures and devices are not necessarily drawn to scale.
Due to the complexity of most modern day devices, it is often necessary to form more than one type of crystalline structure on a single semiconductor body. For example, many integration schemes used in the formation of vertical bipolar transistors require the simultaneous formation of multiple crystalline structures. Differential epitaxy is a method by which more than one crystalline structure is simultaneously formed on the same semiconductor body. Differential epitaxy offers an alternative method to multiple single layer depositions that can be used to achieve the same outcome. In one embodiment, the present invention discloses a method of differential epitaxy in which a monocrystalline silicon layer is grown on a monocrystalline silicon substrate at the same time as an amorphous silicon layer is grown on an adjacent isolating layer.
In the methodology of 200, it will also be appreciated that the substrate 302 of
At 202 substrate preparation begins for subsequent epitaxial growth. Substrate preparation comprises forming at least two different crystalline surface areas within the same substrate.
Surface preparation of the substrate begins at 204 in one embodiment. In varying embodiments surface preparation comprises in-situ annealing in hydrogen, removal of a native oxide that may have formed on the preparation surface, or placement of the semiconductor body into a deposition system.
At 206 an epitaxial layer is deposited directly onto the preparation surface of the semiconductor substrate. In one embodiment the deposition comprises forming a monocrystalline silicon layer and an amorphous silicon layer. In an additional embodiment the deposition further comprises forming a polycrystalline silicon layer. Each of the layer depositions comprises the formation of two or more sub-layers.
Once the deposition is completed, the semiconductor substrate 302 is cooled at 208.
A more detailed example of a substrate preparation is now set forth in
A more detailed example of a surface preparation is now set forth in
The semiconductor substrate 302 is then placed in a deposition system within a couple of minutes. For example, in one embodiment if wet chemical treatment is performed, typically the time to loading the wafer into the deposition chamber is restricted to less than 15 minutes to prevent renewed growth of native oxide. The deposition system may be an epitaxial growth system and may comprise a tube furnace, for example. The deposition system is evacuated and then filled with an inert gas to prevent the native oxide from growing back. In the case of single-wafer reactors, systems often have an evacuatable load lock chamber, in which the wafers can wait under an inert atmosphere until they are coated. In any case, in one embodiment the deposition system guarantees that the O2 and H2O partial pressures are sufficiently low so that defect free monocrystalline growth is possible.
Surface preparation further comprises in-situ annealing in hydrogen (in-situ H2 annealing). In-situ H2 annealing is employed in one embodiment to obtain a monocrystalline, oxygen free silicon surface suitable for epitaxial monocrystalline growth. The in-situ H2 annealing can be performed in the deposition chamber or in the case of cluster systems, in a special conditioning chamber within the same system. The in-situ H2 annealing is performed, in one embodiment, with a H2 gas flow rate of 10-50 standard liter per minute (slm), for example. The annealing also requires that the deposition chamber or conditioning chamber be placed at a temperature ranging from 700-900° C., for cases in which a wet-chemical etch was used, or 1000-1200° C., in cases where a wet-chemical etch was not used. For either case, the deposition chamber is held at a pressure of 1 to 760 torr in one embodiment. The annealing may be performed for 30-300 seconds.
Each of the monocrystalline silicon layer 110, the amorphous silicon layer 108, and the polycrystalline silicon layer 112 are concurrently formed by depositing one or more individual sub-layers, each using an individual set of process parameters. For example, in
In one embodiment, the first sub-layer 602 is deposited at a first pressure to an amorphous thickness between about 1 and 20 nm. The second sub-layer 604 is then deposited to an amorphous thickness of 2-50 nm by continuously changing the pressure (in one embodiment) to arrive at a desired pressure for the deposition of the remaining sub-layer. The third sub-layer 606 is subsequently deposited using the desired pressure selected to guarantee the concurrent growth of different crystalline structures at a high deposition rate. The third sub-layer 606 may be deposited to a thickness between about 20-500 nm. In other embodiments a reduced number, or an additional number, of sub-layers may be used for varying purposes and thicknesses.
More particularly, the process parameters for one embodiment of the present invention, a three sub-layer deposition, may be as stated below. The deposition of the first sub-layer may be performed in a deposition chamber that is held at a temperature between about 400 and 700 degrees Centigrade. The carrier gas is provided into the chamber at a flow rate between about 3 and 30 standard liter per minute (slm). In one embodiment the carrier gas comprises H2. In additional embodiments Ar, He, or N may also comprise the carrier gas. The silicon-containing gas is provided to the chamber at a flow rate between about 50-500 standard cubic centimeter per minute (sccm). The silicon containing gas may comprise disilane (Si2H6), for example. For deposition of in-situ doped silicon layers, one or more doping gases may be used. A first doping gas may comprise arsine (AsH3), phosphine (PH3), and/or diborane (B2H6). Optionally, a second doping gas may be used to in-situ dope the amorphous silicon layer 108, the monocrystalline silicon layer 110 and the polycrystalline silicon layer 112 with electrically neutral carbon. Carbon doping is done concurrently with n-type/p-type doping. The second doping gas may comprise, for example, methylsilane (SiH3CH3), which does not influence the electrical properties of the layers. The incorporation of carbon into the monocrystalline silicon layer is performed substitutionally (i.e., into the lattice sites) at a rate of approximately 75% in one embodiment. Carbon doping reduces diffusion of the dopant (e.g., boron, phosphorous) in the monocrystalline silicon layer. In one embodiment of the present invention a first doping gas, arsine (AsH3) is provided to the deposition chamber at a rate of between about 0.005 and 5 sccm and a second doping gas of methysilane is provided to the chamber at a rate of between about 0.1 and 10 sccm.
In one embodiment the second sub-layer is formed keeping the parameters the same as for the first sub layer and by gradually increasing the pressure within the deposition chamber to the value used in the third sub-layer.
The third sub-layer is formed using the same process parameters as the second sub-layer and keeping the pressure within the deposition chamber constant in a range between about 50 torr and 300 torr.
When multiple crystalline structures are formed (e.g., monocrystalline, polycrystalline and amorphous silicon layers), the different crystalline structures will form at varying deposition rates to form varying thicknesses as shown in
The difference in crystalline growth rates provides a means for determining silicon growth in accordance with the present invention based upon the ratio of thickness of the monocrystalline silicon layer 704, the polycrystalline silicon layer 706, and amorphous silicon layer 702. For example, in one embodiment of the method of the present invention may provide an amorphous silicon layer 108 on an oxide or an oxynitride substrate 102 with a thickness 702 of about 130 nm and a monocrystalline silicon layer 110 on a monocrystalline silicon substrate 104 with a thickness 704 of about 200 nm, and a polycrystalline silicon layer 112 on a polycrystalline silicon substrate 106 with a thickness 706 of about 170 nm
Additionally, structural differences resulting from silicon growth using a method of the present invention may occur due to additional temperature steps that are usually applied to convert amorphous layers into polycrystalline layers. If there are no longer any amorphous layers to be found in the finished component, therefore it cannot necessarily be concluded that they were not present during the production process. However, the surface roughness of amorphous layers is much lower than that of polycrystalline ones, and this situation does not usually change. Therefore, even on the finished component, it is possible to determine what structures the layers had when they were originally deposited.
The present invention overcomes a number of challenges that currently faced by in-situ differential epitaxy. The process parameters necessary to optimize crystalline growth differ for different crystal lattices. Defect free monocrystalline growth on a monocrystalline substrate requires that the atoms to be deposited occupy lattice sites on a monocrystalline substrate before they are covered by other atoms. To achieve this, monocrystalline growth is usually performed at high temperatures and low deposition rates. In contrast, amorphous silicon growth is best performed at high deposition rates and low temperatures. This is because amorphous crystalline growth is most easily obtained when atoms are immediately frozen in place during deposition and therefore prevented from occupying lattice sites. The present invention forms multiple crystalline layers using a common set of process parameters.
Among other challenges, to date, when used in conjunction with in-situ doping, differential epitaxy of multiple concurrent silicon layers has either not been possible, possible only at a low deposition rate, or possible only with additional or special dielectric layers to improve uniform starting of growth on the isolating layer. In-situ doped differential epitaxy has also proved to provide relatively low (e.g., 1e20/cm3) doping concentrations in the grown layer. The present invention provides a method by which differential epitaxy can be performed at a high deposition rate (e.g., up to 100 nm/min and more) to provide an epitaxially grown layer with high dopant concentrations (e.g., up to more than 1e21/cm3). Further, since the deposition is done using in-situ doping, once deposited, the dopants in the monocrystalline silicon layer are already highly electrically active. Therefore, this method eliminates the need for a subsequent temperature step to activate the dopants, although a subsequent thermal process is not prohibited.
Also of particular note for the present invention, is that no additional layer (e.g., seed layer) is required on the substrate to improve a uniform starting of growth of the amorphous silicon layer onto the isolating layer region. For example, the amorphous silicon layer may be deposited directly onto an oxide or oxynitride layer. This is illustrated in
Although the invention has been illustrated and described with respect to one or more implementations, alterations and/or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular regard to the various functions performed by the above described components or structures (assemblies, devices, circuits, systems, etc.), the terms (including a reference to a "means") used to describe such components are intended to correspond, unless otherwise indicated, to any component or structure which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the invention. In addition, while a particular feature of the invention may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application. Furthermore, to the extent that the terms "including", "includes", "having", "has", "with", or variants thereof are used in either the detailed description and the claims, such terms are intended to be inclusive in a manner similar to the term "comprising".
|Cited Patent
|Filing date
|Publication date
|Aug 12, 1993
|Oct 18, 1994
|Kabushiki Kaisha Toshiba
|Method for manufacturing semiconductor integrated circuit device
|Nov 24, 2000
|Aug 27, 2002
|Telefonaktiebolaget Lm Ericsson (Publ)
|Method in the fabrication of a silicon bipolar transistor
|Feb 11, 2002
|Nov 23, 2004
|Asm America, Inc.
|Process for deposition of semiconductor films
|Feb 11, 2002
|May 31, 2005
|Asm America, Inc.
|Deposition over mixed substrates
|Aug 14, 2002
|Mar 6, 2007
|Asm America, Inc.
|Deposition of amorphous silicon-containing films
|Aug 12, 2004
|Sep 25, 2007
|Asm America, Inc.
|Deposition over mixed substrates
|Nov 29, 2006
|Jul 8, 2008
|Seiko Epson Corporation
|Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
|Mar 23, 2007
|Oct 6, 2009
|Applied Materials, Inc.
|Carbon precursors for use during silicon epitaxial film formation
|Dec 1, 2006
|Mar 30, 2010
|National Semiconductor Corporation
|Method of forming a self-aligned bipolar transistor structure using a selectively grown emitter
|Feb 11, 2002
|Nov 14, 2002
|Todd Michael A.
|Deposition Over Mixed Substrates
|Aug 12, 2004
|Mar 3, 2005
|Todd Michael A.
|Deposition over mixed substrates
|Jun 15, 2005
|Oct 20, 2005
|Josef Bock
|Method for the production of a bipolar transistor
|Jan 11, 2006
|Jul 13, 2006
|Isao Suzumura
|Semiconductor device and manufacturing method thereof
|Jan 30, 2006
|Oct 26, 2006
|Matthias Bauer
|Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
|Oct 16, 2006
|Feb 8, 2007
|Todd Michael A
|Process for depositing low dielectric constant materials
|Jun 15, 2007
|Dec 27, 2007
|Seiko Epson Corporation
|Method for manufacturing a semiconductor device
|Aug 22, 2007
|Jan 17, 2008
|Asm America, Inc.
|Deposition over mixed substrates using trisilane
|Mar 23, 2007
|Feb 21, 2008
|Samoilov Arkadii V
|Carbon precursors for use during silicon epitaxial film formation
|Jun 12, 2007
|Mar 18, 2010
|Nxp B.V.
|Method of Manufacturing a Bipolar Transistor and Bipolar Transistor Obtained Therewith
|Apr 14, 2003
|Jul 22, 2004
|Infineon Technologies Ag
|Bipolar transistor production comprises formation of semiconductor substrate with n type collector region
|Sep 21, 1998
|Mar 23, 2000
|Inst Halbleiterphysik Gmbh
|Bipolar transistor, especially a high speed vertical bipolar transistor, is produced by single-poly technology with differential epitaxial base production using a nucleation layer to improve nucleation on an insulation region
|Citing Patent
|Filing date
|Publication date
|Dec 8, 2011
|Dec 11, 2012
|Infineon Technologies Ag
|Process for the simultaneous deposition of crystalline and amorphous layers with doping
|Dec 8, 2011
|Mar 29, 2012
|Infineon Technologies Ag
|Process for the Simultaneous Deposition of Crystalline and Amorphous Layers with Doping
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Apr 21, 2008
Owner name: INFINEON TECHNOLOGIES AG, GERMANY
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Owner name: INFINEON TECHNOLOGIES AG, GERMANY
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|Oct 1, 2008
Owner name: INFINEON TECHNOLOGIES AG, GERMANY
Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE CORRECT THE SPELLING OF TWO INVENTORS NAMES WITHOUT THE UMLAUTS. PREVIOUSLY RECORDED ON REEL 020834 FRAME 0097;ASSIGNORS:SCHAEFER, HERBERT;FRANOSCH, MARTIN;MEISTER, THOMAS;AND OTHERS;REEL/FRAME:021616/0752;SIGNING DATES FROM 20080417 TO 20080421
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Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE CORRECT THE SPELLING OF TWO INVENTORS NAMES WITHOUT THE UMLAUTS. PREVIOUSLY RECORDED ON REEL 020834 FRAME 0097. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNORS:SCHAEFER, HERBERT;FRANOSCH, MARTIN;MEISTER, THOMAS;AND OTHERS;SIGNING DATES FROM 20080417 TO 20080421;REEL/FRAME:021616/0752
|Jul 5, 2011
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|Nov 20, 2014
|Fee payment
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text: Copyright 2012 Mico Publications. All rights reserverd. Please Note: This website, its owners, webmasters and advertisers are not responsible tor any dealings you may have with any third parties you may contact, or who contact you, as a result of information found on this website. The website owner and other advertisers are responsible for their own ads and offers only. Please read all conditions and stipulations for all offers you request.


text:
Emily's Profile
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I've been carving for coming up to six years now and built up my business from one small slab of rubber and a few pointy tools to where it is today. I have been crafting since I was tiny; I've been rubber stamping and creating with polymer clay for over 20 years and my other crafting activities are precious metal clay, cardmaking,…
- Female
- Joined December 8, 2008
Favorite materials
- Emily
- Exeter, England, United Kingdom


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How to Create a Js File
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Mac users, we're pleased to announce Macphun's all-in-one photo editor Luminar is now available for purchase with special launch pricing. (Existing Macphun customers get a further discount.)
We rated Luminar as "Highly Recommended", and you can now visit the Luminar web site to try it for free.
Want to see exactly what the new Nikon P510 and P310 compact cameras look like in the flesh?
The Nikon P510 has a massive 42x zoom lens (yes, 42x) that provides a focal range of 24-1000mm. Unfortunately the early prototype that we got our hands-on was battery-less, preventing us from seeing just how far the lens extends at full zoom.
The Nikon P310 is a small and serious compact with a 24-100mm lens and full manual controls (although still no RAW format support). Again this was an early model with no battery.
Check out our extensive hands-on gallery of photos of Nikon's new P510 and P310 cameras.
20 photos of the new Nikon P510 and P310 compact cameras.
Image Gallery
Click on a thumbnail to see the full version.


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- Average
- Main course: £7
- Food spend: £15
- Opening hours
- Monday to Sunday: 09:00 - 23:00.
We thoroughly enjoyed our afternoon. We had good food, helpful staff and relaxing time. Will definately be back and would recommend the restaurant.
Michael Thorne
25 October 2016
from Horsham
Serving honest, freshly-cooked food, Harvester creates a warm, family-friendly vibe at its hundreds of restaurants throughout the UK. From tapas-style starters and juicy rotisserie chicken, to famous signature ribs and 100% British beef burgers, the Harvester menu is filled with crowd-pleasing favourites. Harvester's unlimited salad bar is on hand for a healthy accompaniment: replenished with super-fresh ingredients throughout the day.
Breakfast goods (including an unlimited cooked or continental option) are on offer in the morning, and there's a kids menu served throughout the day to keep the little ones happy.
Harvester - Horse & Groom Bracknell
Bagshot Road, Bracknell, RG12 9RB
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Customer reviews for Harvester - Horse & Groom Bracknell
- Food
- Value
- Ambience
- Location
- Service
- Drinks
((((( 25 October 2016 by Michael Thorne from Horsham
We thoroughly enjoyed our afternoon. We had good food, helpful staff and relaxing time. Will definately be back and would recommend the restaurant.
((*** 4 October 2016 by Stephanie Hawton from Bracknell
Had a meal last night and had fish chips it was not good the batter was not cooked enough it should be crispy spoilt my evening.
((((* 4 October 2016 by Dan Porter from Bracknell
It was a busy Saturday night and despite booking we had to wait 20 mins for a table, although they do give you a buzzer to wait in the bar so you know when the table is ready. The staff were a little strung out due to the busy atmosphere but were still very good. The food was OK and good value for money.
((((( 27 September 2016 by Andrew Mccrudden from Bracknell
The food was great cooked to perfection
((((( 12 September 2016 by Laura Rackley from Maidenhead
Great example of a harvester my favourite in fact
(((** 9 May 2016 by Allison Day from Waterlooville
Have been here lots of times but it wasn't as good as usual. Long wait for food, salad bar was half empty and when the food did arrive I got chips instead of the mash I ordered and green beans were swimming in water. I think they must have been short staffed and I would still go back as I hoped it was a one off. Our waitress was apologetic and took 20% off the bill.
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Christopher News
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d-trix praising korean idols
dating tips: what not to say to your girlfriend
Brb, dying.
For making me laugh when I needed it
For giving me the inspiration to dance
For making me smile when I thought I couldn't
For helping me reconnect with music
And for showing me what it's like to really love and appreciate your best friends
I Love You, YTF
I've always had a crush on this chick <3
D-trix was cold, so they gave him a blanket.
Don't even need to say who he said this to.
D-trix just being a cutie.


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- Worldwide Rank #127,583,734
- Follower/Following Ratio 0.02
- Daily New Followers 0
yassine zahi Twitter Stats
@007Zahi - Tracking yassine zahi Twitter profile since October 18, 2012
ana yassine zahi je tai mon peyer le maroc li 3andou chi mani3 yamchi yantahar
yassine zahi Tweets
@007Zahi has posted 0 tweets in the last 24 days, which translates to an average of 0.0 tweets per day.
yassine zahi Twitter Followers
@007Zahi has 2 followers on Twitter.
This account is #127,583,734 in the worldwide rank of the most popular Twitter users.
yassine zahi Following on Twitter
@007Zahi is following 94 Twitter accounts.
Last month this account stopped following 3 users.
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Neon and UV reactive hen night accessories so colourfull and original they will be guaranteed to get the party strted and make your hen party stand out from the rest!Detailed in pic is our fab neon and totally UV reactive hen night veil which can be made on a clear plastic comb or alice band - you choose!We can provide evrything from tutus wings and fluffy boot covers to custom making your UV garter to your size in the colours you want!Mix and match all your clothing with glowsticks and finish off with Stargazer neon cosmetics and face paint!
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text: The Best Things About a Freak October Snow StormKyle Wagner10/31/11 6:40pm17EditPromoteGo to permalinkA massive and totally unseasonal snow storm hit the Northeast over the weekend, saddling millions of trick-or-treating runs with lame winter jackets and disapproving parents. But! There are some really great things about an extremely unseasonable nor'easter, too.


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SO Park Battersea, London
- Free WiFi
Main amenities
- 34 guestrooms
- Breakfast available
- Self parking
- 24-hour front desk
- Air conditioning
- Tour/ticket assistance
Feel at home
- Rollaway/extra beds (surcharge)
- Cookware, dishware, and utensils
- Stovetop
- Refrigerator
- Free toiletries
- DVD player
What's around
- In Battersea
- Battersea Park (0.7 mi / 1.1 km)
- Sloane Square (1.7 mi / 2.7 km)
- Saatchi Gallery (1.8 mi / 2.9 km)
- Imperial College London (2.2 mi / 3.6 km)
- Harrods (2.3 mi / 3.8 km)
SO Park Battersea, London
Hotel Info: 866-539-8117from $66
- Standard Studio
- Luxury Suite
- Suite
- Executive Studio
More great choices
At a glance
Key facts
Hotel size
- This hotel has 34 rooms
- This hotel is arranged over 4 floors
- Check-in time 2 PM-11:30 PM
- Check-out time is 11 AM
- Express check-in
Required at check in
- Credit card or cash deposit required
- Government-issued photo ID required
- Minimum check-in age is 18
Travelling with others
- One child (3 years old and younger) stays free when occupying the parent or guardian's room, using existing bedding
- No cribs (infant beds)
- Pets not allowed
- Free WiFi in public areas
- Free WiFi in rooms
- Self parking *
Nearby Three Star London hotels
In the hotel
- Continental breakfast daily (surcharge)
- 24-hour front desk
- Tours/ticket assistance
- Number of buildings/towers - 1
In the room
- Air conditioning
- Egyptian-cotton sheets
- Sleep Number by Select Comfort mattress
- Individually decorated
- Free toiletries
- Hair dryer (on request)
- DVD player
- Desk
- Free WiFi
- Refrigerator
- Stovetop
- Cookware, dishware, and utensils
- Weekly housekeeping provided
Top London hotels
Recently reviewed hotels in London
- Novotel London WestFrom
"Really enjoyed my week long stay. Nice rooms good location excellent bar and staff. Nice mix of guests"Dec 5, 2016
- Hilton London Heathrow Airport HotelFrom
"Best aspect of this hotel is its location, less than 10 minutes along a covered walkway to Terminal 4. Good, modern, clean hotel with friendly staff."Dec 5, 2016
- 11 Cadogan GardensFrom
"This is as close as it gets to feeling like a resident of Chelsea."Dec 5, 2016
- The LanesboroughFrom
"Service is incredible and the hotel is in excellent condition"Dec 5, 2016
Nearby hotels
Also popular with travelers from the USA
SO Park Battersea, London's small print
Also known as
- SO Battersea
- SO Battersea Park
- SO Park Battersea
- SO Park Battersea Apartment
- SO Park Battersea Apartment London
- SO Park Battersea London
- SO Park Battersea House London
- SO Park Battersea House
Only registered guests are allowed in the guestrooms.
The name on the credit card used at check-in to pay for incidentals must be the primary name on the guestroom reservation.
Optional extras
Self parking costs GBP 15 per day
Rollaway beds are available for an additional charge
Breakfast costs between GBP 10 and GBP 25 per person (approximately)
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.
Recent reviews
Good 3.9 /5 from 184 reviews
My husband and I decided to surprise our daughter with a trip to London, before she gets married in August. We loved the hotel, the location was great once we figured out the bus stopped right there. Kind of far if you just want to use the tube. Our only complaint is the pub across the street. LOUD music Friday and Saturday night, until about 1 or 2am. But, Sun. through Wed., it was quiet!
We had a wonderful stay in So Park Hotel, very specious comparing to London hotels and we enjoyed the large bathroom and the very smart kitchenette. Bus station is right in front including N. 344 operating 24/h. Staff were very friendly and helpful
This is a good place to stay when you are visiting friends. Nice clean place
It was very modern and clean, staff was helpful. It was quite a way from most of the main attractions of the city but the bus is very nearby. Not a whole lot going on right in the neighborhood and it was hard to find. A good choice if you don't want to pay the high prices closer to downtown.
Disappointed as the cost did not match with the quality. Averaged out at £200 per night, and I was given a dirty dish cloth so had to go out and purchase one, some cheap washing up liquid that was clearly massively watered down. No tea towel, what's the point in cooking facilities without this? How do you propose we wash up? The fire alarm went off numerous times during the stay, including once at night. Two tea bags for a week, which were not replenished. No plug in the bath, so impossible to use.
Is the description of this hotel not correct? Tell us


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Local card shop heads West
Park Street fixture Alameda Sports Cards & Comics is heading West – to Webster Street, that is.
Shop owner Patti said she plans to close the door on 1412 Park Street, the address she's held since 1987, on Christmas Eve. And she's hoping to reopen in her new spot, 1515 Webster Street, on January 4.
She said cheaper rent, plus anticipation of a worsening economy, prompted the move.
"As a business owner, it would have been irresponsible for me to sign a lease that big," she said. "The rent was just to much for my space."
Patti said that besides her address, not much will change. The store may be open for appointments only on Monday. But she'll still work with the library to continue its annual free comic book day. And she may do additional events, with Washington Elementary School and the West End branch library nearby.
The move comes in the midst of some big changes for Webster Street that include the opening of a newly expanded Pacific Pinball Museum (right across the street from Patti's place, in the old record shop space at 1510 Webster) and the possible arrival of a retail store for a certain Oakland bakery (highlight if you want to be spoiled: Neldams).
More to come on developments here.
Stryker to acquire OtisMed
Stryker to acquire OtisMed
Stryker to acquire OtisMed
Kalamazoo, Mich.-based medical technology firm Stryker Corporation announced that on November 10 that it has acquired Alameda's OtisMed Corporation in a deal valued at up to $103 million.
OtisMed, a privately held software technology firm that was founded in 2005, will remain in Alameda, according to a press release issued by Stryker. The company's focus is on joint replacement.
The deal will include $67 million in upfront payments and up to $36 million in future milestone and royalty payments.
Pagano's expands into Towne Centre
Pagano's expands into Towne Centre
Pagano's expands into Towne Centre
The rumors are true, apparently: Pagano's is expanding into Alameda Towne Centre come spring, according to the Journal's Peter Hegarty. Get the full story by clicking here.


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Shares of organic light-emitting diode technology maker Universal Display (OLED) are down 43 cents, or 0.7%, at $65.12, despite a generally favorable reaction on the Street today to the company's announcement late yesterday that it has agreed to purchase patents from BASF SE, a chemical company that has developed its own OLED materials.
For €87 million, said Universal, it acquired a portfolio that includes "over 500 issued and pending patents around the world, in 86 patent families," most of which is "phosphorescent materials and technologies" with "an average lifetime of 10 years" in patent terms.
The stock price is responding to the immediate dilution to earnings for Universal of the amortization cost, but the deal is significant to Universal on a number of fronts, both bull and bear acknowledge today.
For one, BASF is a company against which Universal defended itself in many patent fights in recent years, so there's a prospect this deal signals some smoother sailing for Universal in legal waters.
The color blue, to which these patents pertain, is a "holy grail" in the OLED industry, as one analyst below explains.
And the deal may also be a harbinger of good things ahead in Universal's dealings with its lead customer, Samsung Electronics (005930KS).
Shares of Qualcomm (QCOM) today fell $3.43, or 6%, to close at $52.12, caught up with the massive downdraft in tech, and most equities, following Britain's vote to leave the E.U.
The headlines crowded out the company's announcement that it has filed a complaint in Beijing against Chinese smartphone maker Meizu, asking the court to confirm that Qualcomm's demands for licensing its patents to Meizu are in accordance with an agreement signed a year ago with the Chinese government.
Meizu is one of the final holdouts in Qualcomm's ongoing efforts to tie up loose ends in its licensing and royalty business following that deal with the government. Qualcomm asserted in its press release it has "negotiated extensively and in good faith" with Meizu.
There are varying responses today to the step-up in effort by Qualcomm.
Cowen & Co.'s Timothy Arcuri, who has an Outperform rating on the shares, and a $60 price target, writes that now was the right time to put the heat on Meizu: "With catch-up payments still somewhat lagging, the time is right for more aggressive tactics – especially as China strives to build some IP enforcement against the West.
We have previously highlighted that we believe that Meizu was the largest holdout (see FQ2:16 (Mar) Earnings Preview) and think that this is the right move as QCOM needs to demonstrate a willingness to take legal action to prevent interminable negotiations and stalling tactics.
Semiconductor intellectual property licensing firm ARM Holdings (ARMH) could see its stock hemmed in by lower royalty payments following Britain's vote to leave the European Union, according to a note today by Canaccord Genuity's Matthew Ramsay.
Although Ramsay has a Buy on the stock, and a $55 price target — he likes the company's exposure to mammoth trends such as networking, connected cars, the Internet of things, and many others — he is worried about the impact of a declining Euro, as many of ARM's licensees collect revenue in Euros and pounds sterling, which could reduce what ARM collects.
Estimates for the latter half of this year "remain too aggressive," Ramsay opines:
We are concerned investors' initial reaction to today's currency moves are discounting the effects a stronger USD could have on consumer device sales and therefore ARM royalties derived from Europe/UK as an offset to translation EPS gains. As such, while we believe ARM shares represent compelling long-term value given the diverse growth prospects and margin structure at only ~24x our 2017 normalized earnings/ADS estimate (and only ~25x our EPS estimate even after the move in local shares today) and further acknowledge buying ARM shares may be the correct relative risk/reward trade today following 'Brexit', we believe shares could be range bound in the low to mid-$40s (back toward £10/share) until consensus 2H/16 Y/Y royalty growth estimates move lower.
Any decline in royalty revenue might, he writes, offset the positive impact that lower costs in pounds would have for ARM, which is based in the U.K.
ARM shares are down 86 cents, or almost 2%, at $44.60.
Shares of Arista Networks (ANET) are down $3.07, or 4%, at $70.75, recouping some of its earlier pre-market losses, which had the stock down 8% or so, following an adverse ruling yesterday by the International Trade Commission in the company legal battle with Cisco Systems (CSCO).
There are no ratings changes today, that I can see, perhaps because the adverse ruling had been expected by some Arista bulls, such as Citigroup's Stanley Kovler, who on Wednesday had urged investors to look past a likely import ban on Arista gear. In a fifteen-page followup note this morning, Kovler reiterates his Buy rating, and $75 price target, writing that the product cycles for Arista matter more than legal issues.
Cisco shares are falling with the broader market, down 87 cents, or 3%, at $28.35.
Arista said in a statement that the ITC issued a "cease and desist order" for three Cisco patents, in investigation number 337-TA-944, commonly referred to as the '944 Investigation. Arista noted the order is to be reviewed by U.S. trade reps.
Arista reiterated that it has built "work-arounds" into its "EOS" operating system software.
It also took a swipe at Cisco, with general counsel Marc Taxay stating:
Despite Cisco's rhetoric claiming that the lawsuits are a defensive move to protect its intellectual property, these actions are clearly part of a broader effort to use litigation to preserve Cisco's market position. If allowed to succeed, Cisco's scheme would have a chilling effect on innovation. While we will defend our rights in these actions, our primary focus remains on the continued supply of products to our customers.
Cisco's chief counsel, Mark Chandler, took a victory lap in a blog post, writing that the ruling "marks the end of Arista's ability to mislead its shareholders and customers about the infringing nature of their products."
Chandler thinks Arista is wrong to request the full text of the final ruling be redacted in large parts:
Shares of Apple (AAPL) are down $1.92, or 2%, at $95.63, after media reports the company was ordered by a Chinese court to stop selling some models of the iPhone in China, however, it later became clear Apple is appealing the ruling and is still selling its wares in the country.
The Wall Street Journal's Eva Dou this morning reports that intellectual property regulators had ruled in favor of Shenzhen Baili, a company that makes a smartphone of its own, saying Apple's iPhone 6 and iPhone 6 Plus were too similar to the exterior casing of the Chinese phone.
CNBC followed up a short while ago saying that all Apple products still for sale in China, according to the network's Jim Cramer.
Among responses from the Street this morning, BMO Capital's Tim Long, who has an Outperform rating on the shares, writes that "We do not believe the impact of the ruling is meaningful."
Shares of Yahoo! (YHOO) are up 30 cents, or 0.8%, at $37.27, after CNBC's David Faber reported on air a short while ago that the company has been holding a "robust" bidding process and has received several bids of more than $5 billion for its "core" advertising business.
Those $5 billion bids may include not just the search and display properties but also the company's patent portfolio.
Said Faber, citing "numerous conversations" with unnamed sources, the board is discussing tomorrow various bids received:
Yahoo! actually seems to be running a fairly robust auction and has received multiple bids that are at or above the $5 billion range for that core business. Now, it is important to note that some of these plus-$5 billion bids include at least some of, if not all of the I.P. portfolio, or some, if not all, of the real estate. However, there are also bids, I am told by people familiar with the situation that are at $5 billion or above that actually don't include either one of the real estate or the patent portfolio, which, of course, becomes important for the overall potential value that will be received should the board of directors, the special committee, decide to move ahead with the sale of the core business and as well the sale of real estate and I.P.
Simon Segars, chief executive of chip licensing powerhouse ARM Holdings (ARMH), was in town Thursday to speak to CNBC and make other visits, following a day of investor meetings Wednesday at the J.P. Morgan tech conference in Boston.
Segars was kind enough to stop by the Barron's offices to chat for a bit.
One topic was last week's announcement of ARM's acquisition of startup Apical, based near ARM's headquarters in Cambridge, for $350 million. The company designs circuits for machine vision that can be embedded in chips developed by ARM's customers. The company has 1 billion smartphones already shipped with its technology.
What they're able to do is to make sense of what a camera is looking at. They can do image processing to remove aberrations and do noise reduction, that's one part of it, and there's technology for displays, to merge graphics and video, adjust brightness. The third piece of their IP is a computer vision engine that's a building block for us as we look at that space in drones, in security cameras, and such.
There's an analogy with the "Mali" embedded graphics circuitry, which didn't exist in ARM-based parts a decade ago but now dominates embedded graphics. The rationale for buying Apical now, explained Segars, is to use ARM's vast resources to "deploy that more widely.
SunTrust Robinson Humphrey's Robert Peck this morning weighs in on what he thinks is hidden value in the "core" business of Yahoo! (YHOO), the part that's based on advertising, apart from its minority interests, arguing it may be worth more than the $6 billion to $8 billion he's been estimating.
Hence, he raises his price target to $44 from $40. The stock is up 54 cents, or 1.5%, at $37.20.
Among the "hidden" assets Peck identifies are its intellectual property claims, its royalty stream from Yahoo! Japan (4689JP), and its real estate.
Of course, this is all set against a backdrop of what most expect is a deadline for bids from Verizon Communications (VZ) and others by this coming Monday, April 18th.
And so Peck sees a prospect for some increased bids beyond what most have been valuing the core:
CLSA's Skye Chen today offers up a 108-page think piece about the outlook for virtual reality, concluding that the technology will "change our lives much more than smartphones ever did," and that it will be a $97 billion market by 2020.
Chen predicts "haptic" VR, the ability to touch things and feel kinesthetic sensations, is the next big thing, and that it's "just around the corner," and will be used for things such as to allow people to "touch" fabric swatches when one is shopping online. Also, sports will be big for VR, and the NBA might vastly extend its ticket sales.
Her top stock picks to benefit are Taiwan phone maker HTC (2498TW), chip manufacturing giant Taiwan Semiconductor Manufacturing (TSM), and Alps Electric (6770.Japan), the Japanese maker of actuators and switches for Apple's (AAPL) iPhone.
Shares of chip maker Advanced Micro Devices (AMD) are up 13 cents, or almost 5%, at $2.76, after a report by Bloomberg apparently stated this morning that Intel (INTC) may license graphics technology from the company.
Shares of Nvidia (NVDA), which already makes money licensing graphics technology to Intel, are down 45 cents, or 1.4%, at $32.65.
The article appears nowhere on Bloomberg's site, but analysts are responding to it this morning.
FBR & Co.'s Christopher Rolland, who has a Market Perform rating on shares of AMD, sees the potential appeal of AMD's technology in Intel's data center server chips, but he also sees a bargaining chip against Nvidia:
Tech Trader Daily is a blog on technology investing written by Barron's veteran Tiernan Ray. The blog provides news, analysis and original reporting on events important to investors in software, hardware, the Internet, telecommunications and related fields. Comments and tips can be sent to: firstname.lastname@example.com.


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30 results was found matching keyword
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Báo Dân Trí English 1 month(s) ago
India's refusal to renew the foreign funding licenses of 25 charities is a violation of their right to freedom of association and appears to be a move to quell criticism, two rights groups said on Tuesday.
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Authorities worried about increasingly strident calls for Hong Kong independence are taking no chances ahead of a rare visit from one of China's top ranking officials, shutting down swathes of the city and reportedly gluing down pavers to quell the prospect of violent protests.
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Digital Marketing Strategies
In today's world a strong Internet presence is essential.
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text: I've been having problems trying to connect to my school WPA network. My ipod is fully upgraded to 2.0. But i can't seem to connect it. On my macbook i selected WPA2 and typed in my username and password and it is able to connect. I've tried it on my ipod with the same settings but i am unable to connect. I realised that on my macbook my password has become a 15 character long password instead of my inputted 10 character password. Anybody knows the workings of WPA protocol? Thanks in advance!


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Grammy Awards 2014: The best celebrity manicures
Celebrity: Paris Hilton
Source: Getty Credits: ELLE Canada
A blizzard of sparkly white sequins and diamonds, Paris shines on the red carpet with a diamond-encrusted manicure and cocktail ring to match her House of Milani dress. Must-read: How to get strong and healthy nails
Celebrity: Taylor Swift
Source: Getty Credits: ELLE Canada
Taylor's blinged-out chainlink Gucci dress is beautifully complemented with a pared-down and shiny manicure—and enhanced by that cocktail ring by celeb jeweller Lorraine Schwartz. GALLERY: Taylor Swift's style evolution
Celebrity: Christine Teigen
Source: Getty Credits: ELLE Canada
Supermodel Christine Teigen beautifully matches her ruby polish to her statement jewels on the Grammys 2014 red carpet. GALLERY: The best cuticle oils


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The Royal Swedish Academy of Sciences has awarded the 2012 Nobel Prize in Physics to David J. Wineland. Wineland is a physicist at the Department of Commerce's National Institute of Standards and Technology (NIST), and receives the award "for ground-breaking experimental methods that enable measuring and manipulation of individual quantum systems," according to an Oct. 9 press release. This is NIST's fourth Nobel Prize in Physics in the past 15 years.
Wineland, who said he learned of the award when Academy officials called his Colorado home at 3:30 a.m., shortly before making the official Oct. 9 announcement, shares the honor with French native and longtime friend Serge Haroche of the Collège de France and Ecole Normale Supérieure in Paris. Wineland holds a Ph.D. from Harvard University and is currently based in Boulder, Colo., as a NIST Fellow.
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Nominations are now being accepted for the 2017 Federal 100 Awards.
Submit yours today!
The president-elect has selected another retired Marine general for his cabinet -- John F. Kelly to head the Department of Homeland Security.
The Congressional Budget Office estimates that implementation of the Modernizing Government Technology Act will cost $9 billion over five years.
The software whiz behind Pixar's movies Rob Cook surprised even himself by coming out of a "failed retirement" to take a top technology job at the General Services Administration.
FCW profiles 30 women and men who are doing great things in federal IT -- and who are poised to be the leaders of tomorrow.
The intelligence agency is shifting its collection of declassified documents from an offline National Archives workstation to the public-facing CIA.gov website.
Help us identify the outstanding women and men in federal IT.
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Home :: Black Diamond Jewelry :: Black Diamond Pendants :: Diamond Heart Pendant
14K White Gold
0.43 cts.
GD-54851 :: Ask a Question
Product Selection
Perfect Service!!
It doesn't matter how beautiful the jewelry is, if the customer service is bad, you can guarantee they won't make a sale to me. This is NOT the case with...
TT-354 Two Tone Wedding Band
Thank you, our rings have arrived and they are lovely!
Thank you very much and we will recommend you to others.
5mm Plain White Gold Heavy Wedding Band
I got my wedding band today. My fiancee has a friend who works in a jewelry store. Just because she is a friend of my girlfriend. She gave me a special...
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- Product Details
Our Engraved Dimple Base Tumbler and Vodka Set - Birthday Year is an ideal gift for any friend or loved one reaching a ripe new age. Not only will it get the party started, it will also act as a reminder of a happy occasion where the family came together.
This set can be paired with either Absolut or Smirnoff Vodka, it's up to you! The entire set will be presented inside a silk-lined box, so you can be sure that elegance is at the top of our list!
The words, "Happy Birthday" are fixed to the top of the glass, with 12 characters for you to add any name or family title of your choice. Below this, choose a year to immortalise and we will engrave to an exceptional standard below the name.
Outside of the elegant crest, there are 2 additional lines for you to light up with your own words. You have 25 characters per line, so you can wish your loved one a very happy birthday.
Presentation box colour may vary.
Measures approx. 9.5cm x 8cm.
- Delivery & Returns
We are aware of how important it is for you to receive your gifts in time. Therefore, once you place your order we will process straight away and dispatch as soon as they are ready to go. We usually dispatch all items within 1-3 days however, this may be a little longer during special occasions such as Christmas. If multiple items ordered, we may dispatch items separately or all together, depending on the process.
Hassle Free Returns Policy:
We're sure that you will be satisfied with your purchase and we also understand that sometimes you may want to return. We keep this process simple! Just contact us if you wish to return goods. Please note: personalised, made-to-order and perishable items are non-refundable.
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Question about: Engraved Dimple Base Tumbler and Vodka Set - Birthday YearPlease do not include or disclose any sensitive personal information, password or credit card information in your message. Your personal security is extremely important to us.No questions yet. Be the first to ask the question!


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Walk the Plank
Played 523 times
Walk the Plank game information:
Its once again time for a new, fresh and unique game that comes from the genre of puzzle games, a game called Walk the Plank! Well, so this time we have a real game-playing experience for all of you puzzle game lovers, lets get to the real point as some sort of rebellion is already taking place on the ship full of pirates, so here you come in role! The main captain needs all the help he can get, so give your best to make those pirates fall straight into the ocean water. Good luck to you!
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This hansome guy was rescued from the local shelter where he developed a cold and would have been euthanized for it.
Manford is very affectionate and loves to sit on your lap. He has been fostered with large dogs and walks around with them like he's one of them and has been great with them from the minute he met them! His paperwork also said he's great with children and cats.
Please give this special guy the great home he deserves!
Please fillout an on-line application if interested in this handsome boy.


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Hotels near Lokken Beach
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Hotels within 0.5 miles of Lokken Beach
- Most bookedHotel Løkken StrandNo Guest Reviews yet
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Hotels within 2 miles of Lokken Beach
5 people looked at this hotel in the last hour
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9 people looked at this hotel in the last hour
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"Gorgeous little cabin close to the port of Hirtshalls, (30mins drive) very well fitted out, owner was very accommodating even though we arrived very late at night. Would definitely stay there again."
A Traveller, Jan 2015, GB
Hotels within 4 miles of Lokken Beach
13 people looked at this hotel in the last hour
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"The staff, the rooms, grocery sore, everything was great ! Everything was great, only minus is the person running the restaurant. Not very friendly and did not allow customers during opening hours becacuse he had a big party coming in, could have been handled much better > All in all highly recom..."
A Traveller, Aug 2015, CA
Hotels within 5 miles of Lokken Beach
10 people looked at this hotel in the last hour
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"We rented the 4 bedroom apartment for 5 nights, with 4 adults and two teens. Very spacious with 2 dining areas inside and outdoor dining space, as well. TV's and Wifi were great. Nice to have a large fridge, dishwasher, stove/oven and washing machine. The teens enjoyed the common area with the pi..."
A Traveller, Jun 2015, US
Hotels within 11 miles of Lokken Beach
- Blokhus GolfcenterNo Guest Reviews yet
6 people looked at this hotel in the last hour
Hotels within 12 miles of Lokken Beach
53 people looked at this hotel in the last hour
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"Very cousy boutique hotel, little old, but full value for money, and very friendly helpfull staff, free coffee in the lobby restaurant, for your and your example business guests, GREAT danish breakfast , nice room, free parking , central in the city !!"
A Traveller, Mar 2016, IE
19 people looked at this hotel in the last hour
Most recent review
"If you are looking for somewhere to feel what it is like to be Danish this is the place to stay. The room was excellent close to everything and very comfortable. The resturant down below was great and morning breakfast was good. Looking forward to our next stay."
A Traveller, May 2016, CA
16 people looked at this hotel in the last hour
Most recent review
"This is the only hotel in Bronderslev. The staff are very nice and helpful and interested in listening to you. The public areas are nice and there is a restaurant in the hotel but we didn't eat there.. The rooms are a bit tired and there is no lift and no air conditioning. A continental breakfas..."
A Traveller, Sep 2016, AU
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This community is for beginners and experts willing to share their Odoo knowledge. It's not a forum to discuss ideas, but a knowledge base of questions and their answers.
MS Access .mdb file repair tool [Closed]
The Question has been closed for reason: off-topic or not relevantby
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- Inspire feminine charm in your footwear collection with Metro's black sandals. This smart pair features a slight heel and a diamond textured strap with a black buckle. Wear it with jeans and a tee for a relaxed look.
- Sole Material - PU
- Heel Type - Flat
- Color Family - Black
- Upper Material - Manmade Leather
- Product Listing Id :MP000000000133385
- An order, once placed, can be cancelled until the seller processes it.
- This product can be returned within 0 day(s) of delivery, subject to the Return Policy.
- For any other queries, do reach out to CliQ Care at 1800 208 8282 or email@example.com