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2011 Lexus ES 350 Sedan 4dr Sedan (3.5L 6cyl 6A)
i owned a chyrsyler 2004 300m that i did not want to let go because of its superb perfomance on the highway,its interior roominest and large trunk space. after 100+ thousand miles, repair cost was getting too much and a family member convince me to buy a lexus. the 2008 recession hit me badly and i could not pay my bills so my once perfect credit went into the garbage bin. I laughed at the idea of buying lexus because i did not have the down payment and i would need to credit it 100%. Capital one bank came to my rescue with a 30K loan but at 17.5% because of my credit. even with a 30k loan i thought to myself, that this could not buy the lexus everyone is encouraging me to buy. Anyway, i call lexus at bayridge brooklyn and asked the crazy question "do you have a lexus in the 24 to 25 k price range and to my surprise, the answer was yes.i headed there immediately and my salesman was John Pellarmi and he worked with me and got me the best deal ever, a 2011 lexus es350 fully loaded 32k miles for 22k .this was february of 2015. this car is smooth even on the roughest of road, just sweet.i would buy another one tomorrow morning. my wife has a 2012 BMW x5 that cost twice my lexus and she always bragged about it.she drove my car once and she had no choice but admit how smooth the lexus is and how easy it is to use the navigation system. even a kindergarten child could use the 2011 lexus nav system so easy to use,.i love this car beyond love.always checking the web to see what is coming out.
This is my second ES. I still have the 2004 model, and it will not be my last. The 2004 has over 145,000 miles and is looking and running great. The 2011 looks and drives like a new car as well.
Ive only owned this car for about 8 months. I absolutely love it, and get lots of compliments driving it! I have not had any problems what so over. The gas mileage isnt great, but my previous car was a 4 cylinder toyota corolla, 2 totally different cars, with totally different engines.My only complaint is, the roof feels low, and Im not that tall either. I am about 5'5, but I always bump my head on the roof getting into the car. Lexus describes it as a cocoon type interior,and that is definitely what it feels like, so if you can live with the low roof feeling, everything else is perfect, and this is the perfect car for you!
bought this car new in late 2010. Having owned the car over 4 years now, it has been a mechanically PERFECT automobile. Other than changing oil, filters and battery, NO repairs. Not even a light bulb.
Auto is very quiet and just floats down the freeway. Wife and I drove 1700 miles r/t to FL without it tiring us out. Little to no road noise and engine is as smooth as glass.
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text:
|13 Reviews
|Property type
|Minimum Stay
|5 nights
Book directly with us and no vrbo fee. Property has a reputable management company so why pay extra. This resort/garden view studio condo is located in the 'B' Banyan Building (unit #133). Beautiful new King bed and a queen murphy/wall bed. Includes 42' flat screen TV and free wireless internet. This condo is well equipped with full kitchen, granite counter tops, tile throughout and spacious ground floor lanai for enjoying those afternoon cocktails.
We also own the unit directly above (#233) which is a lofted studio if you have additional people joining you on your vacation. See www.vrbo.com/400686
Kaanapali Beach is rated #1 beach in North America and Maui has been rated as #1 island in the world!
This is the place to stay with it's low density and quiet location. It is just north of the famous Black Rock, has prime beachfront swimming and snorkeling nearby. Resort amenities include two swimming pools with spas, beach concessions, small gym, an onsite restaurant and shuffleboard. $15 Daily Facility Fee includes local calls, gym use, parking, and wireless internet. Effective Feb. 1, 2017 rate changes to $18/day.
5 night minimum stay required / taxes and fee's apply.
• Air Conditioned Unit
• 1 King & 1 Queen wall bed ~ 4 guests max!
• Internet Station with free Wireless Internet Access
• May include extras such as sand chairs, boogie boards, coolers, sand toys.
• Access Cards to use the Computers and Printers in the Library on 1st floor of the Aloha Tower can be purchased at the Front Desk
• Two Swimming Pools with hot tubs, kiddies pool in front pool.
• Small Gym
• Washers and Dryers are available in the Building behind the Aloha Tower - Quarters to operate the Machines are available from the Front Desk
• Shuffleboard
• Ocean view Restaurant. GREAT WINE SELECTION.
• Convenience Store
• Three bbq areas on property
• Beach Concession & Rentals
• No Elevators
• $15 Daily Facility Fee, effective Feb. 1, 2017 $18/day
• $40 Resort Check in Fee
• Smoking Prohibited on Property
Close to Dining,*Shopping* and Golf in Kaanapali!.
Keywords: Condo, West Maui, Maui Kaanapali Villa, Beach Front property, Low rise, pools
Registration Identification #: W4079552-01
We love to travel and have found Maui is the place we always keep going back to. It is a no hassle vacation as you never have to worry about the food you eat, water you drink, political situation, etc.
There is lots to do in Maui such as site seeing, swimming, snorkeling/diving, dining, numerous beachs to visit, lots of walking and hiking trails, ziplining and all sorts of adventure guided tours. Or just grab a good book from the hotel library, head to the beach to relax, watch the whales, dolphins and even look out for the 3:00 o'clock turtle(s) that swim by off shore.
You will want to keep coming back!
Shirley purchased this condo in 2003
Recently voted # 1 island in the world two years in a row, Maui has endless activities for vacationers, from fabulous beaches to fantastic dining and nightlife! Located on the northwest side of the island, Lahaina is a tropical paradise blending a rich history with modern Maui. Our condo is professionally managed and superbly maintained to the highest standards.
Come see all that Maui has to offer! A sunset cruise around the island makes for a perfect romantic evening. If you're curious about what goes on under the waves...snorkeling tours are a great way to view the incredible variety of life that lives under the surface of the ocean. If you don't want to get wet, there's even a submarine that can take you into the deeps while you view its mysteries from the comfort of a warm cabin. Helicopter tours are an excellent way to take in views of the whole island, including incredible waterfalls, sea cliffs and forests you would be hard pressed to view on foot. For those looking for a little more excitement, you can take an ATV tour or check out the zip lines at the Haleakala Skyline Tour. Golf is available just down the road.
This is a great unit! Ground floor, close to the quiet pool and very clean. There was a lot of storage (dressers, shelves etc) so we had a place for everything and weren't tripping over our stuff. The kitchen is extremely well equipped. We would definitely love to stay again if we are lucky enough to return to Maui!
We loved this unit. Most important the bed was excellent! It was clean, and well equipped with kitchen, bath, and outdoor beach chairs, towels and toys. We enjoyed the lanai with morning sun till sunset! We were very comfortable and are looking forward to our next stay.
We stayed for 10 days. As one of the other reviews stated it was exactly as it looked in the pictures. We really enjoyed the suite. It had everything we needed to cook food and feel comfortable for the week. The hotel is very nice and we took advantage of the bbq pits. Loved the location and the pools etc. The only thing we were slightly surprised about was that there is a 3rd party management company for this suite and therefore the hotel will not help you with anything. The only towels you get are the ones pre-arranged with the management company. This in and of itself is ok, I guess you could do laundry? We didn't want to so we made due. We had to buy toilet paper, and by the 10th day the suite really did need a cleaning from all the sand etc. The hotel does have daily housekeeping but because this suite was externally managed we did not get it. This was the only thing I was disappointed with.
I think these factors are considered in the price, which we were very happy with. Overall we were more happy, than not.
This was our 3rd trip to Maui and after 2 years of staying in a resort hotel we decided to try renting a condo through VRBO. Best decision ever. The process of finding and booking a room was so easy. The condo we picked was unbelievably great. Terrific room with everything we needed. Comfortable bed, lovely kitchen, beautiful lanai and only a short walk to the nicest pool. We are looking forward to rebooking this condo next year.
We love this unit for many reasons. The unit is clean, the furnishings are in good shape, the unit is quiet and there is a pool nearby. What struck me is this unit is so much better equipped than the resort managed properties. We have stayed at MKV 8 times in the past 6 years and this is the best equipped. We are used to only having 4 of everything at the resort managed properties. This unit has plenty of glasses, dishes, bowls, flatware, and something you will never find at a resort managed property, wine glasses! Big beach towels! Fins, boogie boards and cooler are available. The Castaway Cafe is wonderful, the food is great and the staff is warm and friendly.
What a wonderful vacation. This unit is everything you could want. It was beautiful, well stocked and immaculate. Thank you for the beach towels and coffee! The garden view is beautiful. We love the Castaways. The employees at the frost desk are great and the guys at the Beach Shack where you rent beach equipment are the best. Why would you go anywhere else. We can't wait to come back.
Walk the Kaanapali Beach boardwalk from one end to the other or take the free trolley which has numerous stops along the way to hop-on/hop-off.
|Rate Period
|Weekend Night
Aug 21 2016 - Dec 15 2016
5 night minimum stay
Dec 16 2016 - Mar 31 2017
5 night minimum stay
Regular Spring
Apr 1 2017 - May 14 2017
5 night minimum stay
Value Spring
May 15 2017 - Jun 25 2017
5 night minimum stay
Jun 26 2017 - Aug 20 2017
5 night minimum stay
|Daily hotel fee
|$18 + Tax
|cleaning & damage depos
|check in fee
|$40 + Tax
|Tax Rate
$15/day hotel fee due at time of check in.
Daily resort fee $15/day + $40 check in fee plus tax is paid to front desk at check in.


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The five-year-old gray gelding Tune Me In backed up his 25-1 upset of the Grade 3 Oceanport on July 29 with another triumph over the Monmouth Park turf course in Saturday's Grade 3, $99,000 Cliff Hanger.
A head behind Get Serious through splits of :24 1/5, :47 3/5 and 1:10 3/5, Tune Me In put that rival away in the stretch, opened up a length advantage passing the eighth pole and maintained that margin to the wire under Paco Lopez. After completing one mile in 1:33 4/5 over firm ground, Tune Me In paid $15.40, $5.20 and $2.20 as the 6-1 longest shot in a field of five.
"When you don't expect it, it's especially nice to win," winning trainer Bruce Alexander said. "In mid-stretch, you think you're vulnerable and they're going to close in, but in the last 50 yards he was actually getting a little space in between him and the contenders."
Salto, the former French mainstay making just his second start for trainer Todd Pletcher, rallied from last to edge Get Serious for second by a head as the 6-5 favorite. A half-length farther back was Lentenor, with Upgrade trailing the field. Admiral Perry and Glass Art were scratched.
Owned by Patricia Generazio, Tune Me In was an allowance-class runner prior to this season. He made his seasonal bow in June 10 John McSorley at Monmouth, finishing third going about 5 1/2 furlongs on the grass. Seventh in a Belmont Park allowance next out, Tune Me In returned to Monmouth last time and registered the half-length upset in the Oceanport on Haskell Day. His record now stands at 21-4-7-4, $349,845.
"Even though he was a nice, useful horse, he's moved up to another level now," Alexander added.
Bred in Florida by Joseph and Helen Barbazon, the son of Concorde's Tune is out of the winning Court Trial mare Pleasant Courtney, who is a half-sister to stakes winners Bet the Sights and Joe's Lad. His second dam is stakes-placed scorer Sightseeing while his third dam, Window Card, produced multiple stakes hero Billy the Best.
Others of note in this female family include Grade 1 queen Colstar and Group/Grade 2 conquerors Montjoy and Wesley.


text:
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This review is from: Stand Removable Wireless Bluetooth Keyboard PU Leather Case Cover + Film + Stylus For Samsung Galaxy Tab Pro 8.4 SM-T320 T320
Pros: It's red, the cut outs are in the right places, it has a built in stand and it has a keyboard (sort of) and offers decent protection
Cons: The case does not fit properly - the cutouts are in the right spots, but the case is just a little bit too big. When I use the built in stand the tablet slides down past the cut outs, it's more annoying than anything.
The deal breaker for me is the keyboard. The keyboard will not hold a charge, it only works while it's charging.
Other Thoughts: I really wanted to like this case - I've tried 2 other cases for this tablet (not purchased from newegg), but both were duds. The first stunk of mildew on arrival, the second felt like cardboard and offered as much protection and this is the third. Maybe the fourth will be the charm?READ FULL REVIEW
This review is from: GIGABYTE Radeon R9 270X DirectX 11 GV-R927XOC-2GD 2GB 256-Bit GDDR5 PCI Express 3.0 HDCP Ready CrossFireX Support Video Card
Pros: Fantastic deal on a 4 gb card, would run any game I threw at it
Cons: Flashing screen from the very beginning, but only while playing games - and artifacts galore! In the beginning it the whole screen would flash every 5 minutes or so, now it can be several times per minute. I have emailed the company several times, but have not gotten any response.READ FULL REVIEW
This review is from: 100% Free Wireless Internet -- FreedomPop Photon Mobile 4G Hotspot
Pros: Very small, portable and free 500mg per month - completely free, no other plan required. You can upgrade to a greater data package if needed.
Cons: Customer service with freedompop is terrible. Freedompop did not work in my area, so I cancelled before my free trial ended. I still got billed 2 more times (billed quarterly), despite cancelling. They claim that even though I cancelled my plan, I did not cancel the additional services that they bundled in with my plan without my permission. I've gotten the BBB, attorney general and my bank involved and they still refuse to refund.READ FULL REVIEW


text:
With a stay at New Orient Hôtel in Paris (Paris City Centre), you'll be convenient to Place de Clichy and Arc de Triomphe. This hotel is close to Eiffel Tower and Notre Dame Cathedral.
Make yourself at home in one of the 30 air-conditioned rooms featuring flat-screen televisions. Complimentary wireless Internet access keeps you connected, and cable programming is available for your entertainment. Conveniences include phones and safes, and housekeeping is provided daily.
Take advantage of the hotel's room service (during limited hours).


text:
Patent application title: TOPOGRAPHY BASED PATTERNING
Gurtej S. Sandhu (Boise, ID, US)
Steve Kramer (Boise, ID, US)
Steve Kramer (Boise, ID, US)
IPC8 Class: AG03F720FI
USPC Class:
Class name: Imaging affecting physical property of radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product forming nonplanar surface including etching substrate
Publication date: 2010-07-29
Patent application number: 20100190114
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A mask having features formed by self-organizing material, such as diblock
copolymers, is formed on a partially fabricated integrated circuit.
Initially, a copolymer template, or seed layer, is formed on the surface
of the partially fabricated integrated circuit. To form the seed layer,
diblock copolymers, composed of two immiscible blocks, are deposited in
the space between copolymer alignment guides. The copolymers are made to
self-organize, with the guides guiding the self-organization and with
each block aggregating with other blocks of the same type, thereby
forming the seed layer. Next, additional, supplemental diblock copolymers
are deposited over the seed layer. The copolymers in the seed layer guide
self-organization of the supplemental copolymers, thereby vertically
extending the pattern formed by the copolymers in the seed layer. Block
species are subsequently selectively removed to form a pattern of voids
defined by the remaining block species, which form a mask that can be
used to pattern an underlying substrate. The supplemental copolymers
augment the height of the copolymers in the seed layer, thereby
facilitating the use of the copolymers for patterning the underlying
1. A method for forming a mask pattern, comprising:depositing a layer of
block copolymers;segregating blocks of the block copolymers to form
domains comprising like blocks of the block copolymers; andsubsequently
vertically extending the domains.
2. The method of claim 1, wherein vertically extending comprises:depositing a layer of supplemental block copolymers; andsegregating and aligning like block species of the supplemental block copolymers with some of the domains.
3. The method of claim 2, wherein the supplemental block copolymers are the same as the block copolymers, wherein aligning blocks comprises matching like blocks of the supplemental block copolymers with like blocks of the block copolymers.
4. The method of claim 2, wherein aligning blocks comprises performing an anneal.
5. The method of claim 1, further comprising forming a plurality of guides for copolymer alignment before depositing the layer.
6. The method of claim 5, wherein the guides are formed in a hard mask layer, wherein forming the plurality of guides comprises:forming a pattern in a photoresist layer; andtransferring the photoresist pattern to the hard mask layer.
7. The method of claim 6, wherein forming the plurality of guides further comprises trimming features formed in the hard mask layer after transferring the photoresist pattern.
8. The method of claim 5, wherein depositing the layer comprises depositing block copolymers over and around the plurality of guides for copolymer alignment.
9. The method of claim 1, further comprising selectively removing domains and transferring a pattern formed by the domains to an underlying substrate after subsequently vertically extending the domains.
10. The method of claim 9, wherein transferring the pattern forms electrical devices in an integrated circuit.
11. The method of claim 10, wherein transferring the pattern forms a photomask.
12. The method of claim 1, wherein the domains comprise vertical lamellae.
13. The method of claim 1, wherein the domains comprise vertically extending isolated pillars.
14. A patterning method, comprising:providing a repeating pattern of block copolymer domains over a substrate;providing a supplemental layer of block copolymers over the repeating pattern, the supplemental layer have a supplement layer pattern substantially similar to the repeating pattern.
15. The method of claim 14, wherein the supplemental layer pattern comprises domains disposed directly on like domains of the repeating pattern.
16. The method of claim 15, further comprising selectively removing some of the domains, thereby defining openings extending from the supplemental layer to the substrate.
17. The method of claim 16, further comprising etching the substrate through the openings.
18. The method of claim 14, wherein the block copolymers of the repeating pattern comprise diblock copolymers.
19. The method of claim 18, wherein the diblock copolymers comprise polystyrene.
20. The method of claim 19, wherein the diblock copolymers further comprise polymethylmethacrylate.
[0001]This application is a divisional of U.S. patent application Ser. No. 11/445,907, filed Jun. 2, 2006.
[0002]This application is related to U.S. patent application Ser. No. 11/389,581 to Gurtej Sandhu, filed Mar. 23, 2006, entitled Topography Directed Patterning, the entire disclosure of which is incorporated by reference herein.
[0003]1. Field of the Invention
[0004]This invention relates generally to integrated circuit fabrication and, more particularly, to printing techniques.
[0005]2. Description of the Related Art
[0006]As a consequence of many factors, including demand for increased portability, computing power, memory capacity and energy efficiency, integrated circuits are continuously being made more dense. The sizes of the constituent features, e.g., electrical devices and interconnect lines, that form the integrated circuits are constantly being decreased to facilitate this scaling.
[0007]The trend of decreasing feature size is evident, for example, in memory circuits or devices such as dynamic random access memories (DRAMs), flash memory, static random access memories (SRAMs), ferroelectric (FE) memories, etc. To take one example, DRAM typically comprises millions of identical circuit elements, known as memory cells. In general, a capacitor-based memory cell, such as in conventional DRAM, typically includes two electrical devices: a storage capacitor and an access field effect transistor. Each memory cell is an addressable location that can store one bit (binary digit) of data. A bit can be written to a cell through the transistor and can be read by sensing charge in the capacitor. Some memory technologies employ elements that can act as both a storage device and a switch (e.g., dendritic memory employing silver-doped chalcogenide glass) and some nonvolatile memories do not require switches for each cell (e.g., magnetoresistive RAM) or incorporate switches into the memory element (e.g., EEPROM for flash memory). By decreasing the sizes of the electrical devices that constitute a memory cell and the sizes of the conducting lines that access the memory cells, the memory devices can be made smaller. Additionally, storage capacities can be increased by fitting more memory cells on a given area in the memory devices. The need for reductions in feature sizes, however, is more generally applicable to integrated circuits, including general purpose and specialty processors.
[0008]The continual reduction in feature sizes places ever greater demands on the techniques used to form the features. For example, photolithography is commonly used to pattern these features. Typically, photolithography involves passing light through a reticle and focusing the light onto a photochemically-active photoresist material. Just as a slide has an image to be projected onto a screen, the reticle typically has a pattern to be transferred to a substrate. By directing light or radiation through the reticle, the pattern in the reticle can be focused on the photoresist. The light or radiation causes a chemical change in the illuminated parts of the photoresist, which allows those parts to be selectively retained or removed, depending on whether positive or negative photoresist is used, relative to parts which were in the shadows. Thus, the exposed and unexposed parts form a pattern in the photoresist. It will be appreciated that this pattern can be used as a mask to form various features of an integrated circuit, including conductive lines or parts of electrical devices.
[0009]Because lithography is typically accomplished by projecting light or radiation onto a surface, the ultimate resolution of a particular lithography technique depends upon factors such as optics and light or radiation wavelength. For example, the ability to focus well-defined patterns onto resist depends upon the size of the features and on the wavelength of the radiation projected through the reticle. It will be appreciated that resolution decreases with increasing wavelength, due, among other things, to diffraction. Thus, shorter wavelength radiation is typically required to form well-resolved features, as the sizes of the features decrease. Consequently, to facilitate reductions in feature sizes, lower and lower wavelength systems have been proposed.
[0010]For example, 365 nm, 248 nm, 193 nm and 157 nm wavelength systems have been developed as features sizes have decreased. Additional reductions in feature sizes, e.g., down to 20 nm features, may require even shorter wavelength systems. For example, X-ray based lithography, using X-ray radiation instead of light, has been proposed to form very small features, such as 20 nm features. Another proposed technology is extreme ultraviolet (EUV) lithography, using, e.g., 13.7 nm radiation. X-ray and EUV lithography, however, are expected to be prohibitively expensive to implement. In addition to cost, the techniques face various technical obstacles. For example, for X-ray lithography, these obstacles include difficulties in forming high quality reticles which are sufficiently opaque to X-rays and difficulties in devising resists which are sufficiently sensitive to the X-rays. Moreover, rather than using optics to focus radiation on the resist, some X-ray systems place the reticle close to the resist, to directly expose the resist to X-rays passing through the reticle. This can cause complications in aligning the reticle with the resist and, in addition, places significant demands on the flatness of both the reticle and the resist. In addition, X-ray lithography can use reflective as opposed to refractive optics, which can require a complete redesign of optical elements and related systems. Similarly, other high resolution lithography techniques, including ion beam and electron beam lithography, have their own technical and practical obstacles, including high complexity and costs.
[0011]Accordingly, there is a continuing need for high resolution methods to pattern small features on semiconductor substrates.
[0012]The invention will be better understood from the Detailed Description of the Preferred Embodiments and from the appended drawings, which are meant to illustrate and not to limit the invention, and wherein:
[0013]FIG. 1 is a schematic cross-sectional side view of a partially formed integrated circuit, in accordance with preferred embodiments of the invention;
[0014]FIG. 2 is a schematic cross-sectional side view of the partially formed integrated circuit of FIG. 1 after forming features in a photoresist layer, in accordance with preferred embodiments of the invention;
[0015]FIG. 3 is a schematic cross-sectional side view of the partially formed integrated circuit of FIG. 2 after etching through a hard mask layer, in accordance with preferred embodiments of the invention;
[0016]FIG. 4 is a schematic cross-sectional side view of the partially formed integrated circuit of FIG. 3 after removing the photoresist layer, in accordance with preferred embodiments of the invention;
[0017]FIG. 5 is a schematic, cross-sectional side view of the partially formed integrated circuit of FIG. 4 after widening spaces between lines in the hard mask layer, in accordance with preferred embodiments of the invention;
[0018]FIG. 6 is a schematic, cross-sectional side view of the partially formed integrated circuit of FIG. 5 after depositing a layer of a block copolymer solution, in accordance with preferred embodiments of the invention;
[0019]FIG. 7 is a schematic, cross-sectional side view of the partially formed integrated circuit of FIG. 6 after self-organization of the block copolymers to form a copolymer template or seed layer, in accordance with preferred embodiments of the invention;
[0020]FIGS. 8 and 9 are schematic, top plan views of the partially formed integrated circuit of FIG. 7 showing exemplary possible copolymer arrangements resulting from the self-organization of the block copolymers, in accordance with preferred embodiments of the invention;
[0021]FIG. 10 is a schematic, cross-sectional side view of the partially formed integrated circuit of FIG. 7 after depositing an additional layer of block copolymers, in accordance with preferred embodiments of the invention;
[0022]FIG. 11 is a schematic, cross-sectional side view of the partially formed integrated circuit of FIG. 10 after self-organization of the block copolymers in the additional layer of block copolymers, in accordance with preferred embodiments of the invention;
[0023]FIG. 12 is a schematic, cross-sectional side view of the partially formed integrated circuit of FIG. 11 after selectively removing a block copolymer species in the additional layer of block copolymers and in the copolymer template, in accordance with preferred embodiments of the invention;
[0024]FIG. 13 is a schematic, cross-sectional side view of the partially formed integrated circuit of FIG. 12 after transferring the pattern defined by the block copolymers into the underlying substrate, in accordance with preferred embodiments of the invention;
[0025]FIG. 14 is a schematic, cross-sectional side view of the partially formed integrated circuit of FIG. 13 after stripping the block copolymers, in accordance with preferred embodiments of the invention; and
[0026]FIGS. 15 and 16 are schematic, perspective views of the partially formed integrated circuit of FIG. 14 showing exemplary patterns formed in the substrate, in accordance with preferred embodiments of the invention.
[0027]The ability of block copolymers to self-organize can be used to form mask patterns. Block copolymers are formed of two or more chemically distinct blocks. For example, each block can be formed of a different monomer. The blocks are preferably immiscible or thermodynamically incompatible, e.g., one block can be polar and the other can be non-polar. Due to thermodynamic effects, the copolymers will self-organize in solution to minimize the energy of the system as a whole; typically, this causes the copolymers to move relative to one another, e.g., so that like blocks aggregate together, thereby forming alternating regions containing each block type or species. For example, if the copolymers are formed of polar and non-polar blocks, the blocks will segregate so that non-polar blocks aggregate with other non-polar blocks and polar blocks aggregate with other polar blocks. It will be appreciated that the block copolymers may be described as a self-organizing material since the blocks can move to form a pattern without application of an external force to direct the movement of particular individual molecules, although heat may be applied to increase the rate of movement of the population of molecules as a whole.
[0028]In addition to interactions between the block species, the self-organization of block copolymers can be influenced by topographical features, such as steps on the surface on which the block copolymers are deposited. For example, a diblock copolymer, a copolymer formed of two different block species, can form alternating regions which are each formed of a substantially different block species. When self-organization of block species occurs in the area between the walls of a step, the steps can interact with the blocks such that, e.g., each of the alternating regions formed by the blocks can be made to form a regular pattern with features oriented parallel to the walls. In addition, the self-organization of block copolymers can be guided by photolithographically modifying a surface, without forming steps in the surface, as disclosed in: Stoykovich et al., Science 308, 1442 (2005); Kim et al., Nature 424, 411 (2003); and Edwards et al., Adv. Mater. 16, 1315 (2004). The entire disclosure of each to these references is incorporated by reference herein.
[0029]Such self-organization can be useful in forming masks for patterning features during semiconductor fabrication processes. For example, one of the alternating regions can be removed, thereby leaving the material forming the other region to function as a mask. The mask can be used to pattern features such as electrical devices in an underlying semiconductor substrate. An exemplary process for forming a copolymer mask is disclosed in U.S. patent application Ser. No. 11/389,581 to Gurtej Sandhu, filed Mar. 23, 2006, entitled TOPOGRAPHY DIRECTED PATTERNING, Attorney Docket No.: MICRON. 342A (Micron Ref. No.: 2005-0865), the entire disclosure of which is incorporated by reference herein.
[0030]It will be appreciated that the thickness of a copolymer film can influence the self-organization of the copolymers and the pattern formed by the copolymers. Thus, depending on the desired pattern, the copolymer film can thin, leading to the formation of a thin mask. Because processing through the mask, e.g., etching an underlying substrate through the mask, can cause some wearing away of the mask, the mask may be too thin for some applications. For example, if an etch chemistry has insufficient selectivity for the substrate, the mask may be undesirably worn away before a pattern transfer to the substrate is complete.
[0031]In preferred embodiments of the invention, the height of the self-organized copolymers is augmented to increase the thickness of the mask formed by the copolymers. Guide features are patterned and trimmed over a substrate to achieve a desired spacing between the guide features. A film of copolymers is deposited and the copolymers are made to self-organize between guide features to form an initial mask layer having alternating domains, with each domain formed substantially of like block species. For example, the domains can be lines, with lines formed substantially of polar block species alternating with lines formed substantially of non-polar block species.
[0032]The height of the initial mask layer is then preferably augmented using a self-organizing material, preferably additional, supplemental block copolymers, deposited over the initial mask layer. It will be appreciated that the organized copolymers of the initial mask layer allow the initial mask layer to act as a copolymer template or seed layer, which guides the supplemental copolymers to form a desired pattern. Preferably, particular block species of the supplemental copolymers preferentially align with particular block species in the copolymer template, effectively vertically extending the block domains in the copolymer template. In some embodiments, the supplemental copolymers and the template copolymers are the same, so that like block species aggregate together. Some of the blocks from both the template and the supplemental copolymer layer are subsequently selectively removed. The remaining block species can be used as a mask for patterning of underlying materials, e.g., during the fabrication of integrated circuits.
[0033]Advantageously, the preferred embodiments allow the formation of small, closely-spaced step features which might otherwise need to be formed using newer, relatively complex and expensive lithography techniques. Conventional, proven and relatively inexpensive lithography techniques can be utilized to form guides for directing the self-organization of block copolymers. Moreover, the self-organizing behavior of block copolymers allows the reliable formation of very small features, thereby facilitating the formation of a mask with a very small feature size. For example, features having a critical dimension of about 1 nm to about 100 nm, more preferably, about 2 nm to about 50 nm and, more preferably, about 3 nm to about 30 can be formed.
[0034]In addition, augmentation of the mask features advantageously allows the masks to be used in applications where a single self-organized copolymer mask is too thin for effective processing. For example, the augmented mask can be used in applications where the substrate is difficult to etch, requiring a long or aggressive etch (e.g., when etching multiple disparate substrate materials), or where etch chemistries still remove a significant amount of copolymer material due to low etch selectivity for substrate material. Moreover, higher quality patterns are possible, since the augmentation minimizes the need to form a thick initial copolymer mask, thereby allowing the formation of the template mask to be optimized for forming well-defined features, rather than optimizing for thicknesses sufficient to directly pattern a substrate.
[0035]Reference will now be made to the Figures, wherein like numerals refer to like parts throughout. It will be appreciated that the Figures are not necessarily drawn to scale.
[0036]In a first phase of methods according to the preferred embodiments, a copolymer template or seed layer is formed. With reference to FIG. 1, a cross-sectional side view of a partially formed integrated circuit 100 is illustrated. Masking layers 120, 130 are preferably provided above a substrate 110 to form guides for copolymer alignment. The materials for the layers 120, 130 overlying the substrate 110 are preferably chosen based upon consideration of the interaction of the layers with block copolymer materials to be used and of the chemistry and process conditions for the various pattern forming and pattern transferring steps discussed herein. For example, because patterns in upper layers are preferably transferred to lower layers, the lower masking layer 130 is preferably chosen so that it can be selectively etched relative to other exposed materials. It will be appreciated that a material is considered selectively, or preferentially, etched when the etch rate for that material is at least about 2-3 times greater, preferably at least about 10 times greater, more preferably at least about 20 times greater and, most preferably, at least about 50 times greater than that for surrounding materials. Because an objective for the masks formed herein is to allow well-defined patterns to be formed in the substrate 110, it will be appreciated that one or more of the layers 120, 130 can be omitted or substituted, or additional layers can be added, if suitable other materials, chemistries and/or process conditions are used for pattern forming and transfer.
[0037]It will be appreciated that the "substrate" to which patterns are transferred can include a single material, a plurality of layers of different materials, a layer or layers having regions of different materials or different structures in them, etc. These materials can include semiconductors, insulators, conductors, or combinations thereof. For example, the substrate can comprise doped polysilicon, a single crystal electrical device active area, a silicide, or a metal layer, such as a tungsten, aluminum or copper layer, or combinations thereof. In some embodiments, the mask features discussed below can directly correspond to the desired placement of conductive features, such as interconnects, in the substrate. In other embodiments, the substrate can be an insulator and the location of mask features can correspond to the desired location of insulation between conductive features, such as in damascene metallization. The mask features can be used as a hard mask to directly etch the substrate, or can be used to transfer a pattern to another underlying layer, e.g., a carbon, preferably transparent carbon, layer, which is then used to transfer the pattern to one or more underlying layers, such as the substrate.
[0038]With continued reference to FIG. 1, the selectively definable layer 120 overlies a hard mask, or etch stop, layer 130, which overlies the substrate 110. The selectively definable layer 120 is preferably photodefinable, e.g., formed of a photoresist, including any photoresist known in the art. For example, the photoresist can be any photoresist compatible with extreme ultraviolet systems (e.g., 13.7 nm wavelength systems), 157 nm, 193 nm, 248 nm or 365 nm wavelength systems, or 193 nm wavelength immersion systems. Examples of preferred photoresist materials include argon fluoride (ArF) sensitive photoresist, i.e., photoresist suitable for use with an ArF light source, and krypton fluoride (KrF) sensitive photoresist, i.e., photoresist suitable for use with a KrF light source. ArF photoresists are preferably used with photolithography systems utilizing relatively short wavelength light, e.g., 193 nm. KrF photoresists are preferably used with longer wavelength photolithography systems, such as 248 nm systems. In addition, while the preferred embodiments can obviate the need to define extremely small features with expensive, relatively new direct formation techniques such as extreme ultraviolet systems (including 13.7 nm wavelength systems) or electron beam lithographic systems, such systems can also be used, if desired. In addition, maskless lithography, or maskless photolithography, can be used to define the selectively definable layer 120. In other embodiments, the layer 120 and any subsequent resist layers can be formed of a resist that can be patterned by nano-imprint lithography, e.g., by using a mold or mechanical force to form a pattern in the resist.
[0039]The material for the hard mask layer 130 preferably comprises an inorganic material, which is not a polymer. Exemplary materials include silicon oxide (SiO2), silicon or a dielectric anti-reflective coating (DARC), such as a silicon-rich silicon oxynitride. The hard mask layer 130 comprises silicon oxide in the illustrated embodiment.
[0040]With reference to FIG. 2, the photodefinable layer 120 is exposed to radiation through a reticle and then developed to leave a pattern comprising features 122 which are formed of photodefinable material. It will be appreciated that the pitch of the resulting features 122, e.g., lines, is equal to the sum of the width of a line 122 and the width of a neighboring space 124. The pitch of the features 122 can be, e.g., about 400 nm or less, preferably, about 300 nm or less, more preferably, about 200 nm or less or about 100 or less. In an exemplary embodiment, the features 122 can have a critical dimension of about 140 nm and a pitch of about 280 nm.
[0041]With reference to FIG. 3, the pattern in the photodefinable layer 120 is transferred to the hard mask layer 130, thereby forming hard mask features 132 in the hard mask layer 130. The pattern transfer is preferably accomplished using an anisotropic etch, such as an etch using a fluorocarbon plasma, although a wet (isotropic) etch may also be suitable if the hard mask layer 130 is sufficiently thin. Exemplary fluorocarbon plasma etch chemistries include CFH3, CF2H2, CF3H and CF4/HBr. With reference to FIG. 4, resist forming the photodefinable layer 120 is also preferably removed, e.g., by plasma ashing.
[0042]With reference to FIG. 5, the hard mask features 132 (FIG. 4) are trimmed to form guides 134 for copolymer alignment. The hard mask features 132 can be trimmed using a wet or dry etch. The trim advantageously allows the formation of features having smaller critical dimensions than could easily be formed using conventional photolithography. For example, hard mask features 132 having a critical dimension of about 140 nm and a pitch of about 280 nm can be trimmed to form guides 134 having a critical dimension of about 35 nm and the same pitch of about 280 nm. In other embodiments, the photoresist features 122 (FIG. 2) can be trimmed in addition to, or instead of, the hard mask features 132, thereby allowing guides 134 of the desired size to be formed without the need to trim the hard mask features 132.
[0043]Block copolymers are next applied and block copolymer self-organization is facilitated to form a mask pattern over the substrate 110. A suitable method for forming self-organized block copolymer patterns is disclosed in Block, IEE Transactions in Nanotechnology, Vol. 3, No. 3, September 2004. The entire disclosure of that reference is incorporated by reference herein.
[0044]With reference to FIG. 6, a film 160 of block copolymer material is deposited between and over the guides 134. The copolymer comprises blocks of polymer material which can be selectively etched relative to one another and which can self-organize in a desired and predictable manner, e.g., the blocks are preferably immiscible and will segregate under appropriate conditions to form domains predominantly containing a single block species. In the exemplary illustrated embodiment, the copolymer is a diblock copolymer, comprising, e.g., polystyrene (PS) and poly-methylmethacrylate (PMMA) in a 70:30 PS:PMMA ratio with a total molecular weight of 64 kg/mol. The diblock copolymers can be provided dissolved in a solvent, e.g., toluene. Preferably, each of the copolymers are substantially the same size and composition, to increase the predictability and regularity of the patterns formed by the self-organization of the copolymers. It will be appreciated that the total size of each diblock copolymer and the ratio of the constituent blocks and monomers are preferably chosen to facilitate self-organization and to form organized block domains having desired dimensions. For example, it will be appreciated that a block copolymer has an intrinsic polymer length scale, the average end-to-end length of the copolymer in film, including any coiling or kinking, which governs the size of the block domains. A copolymer solution having longer copolymers may be used to form larger domains and a copolymer solution having shorter copolymers may be used to form smaller domains. The block copolymers can be deposited by various methods, including, e.g., spin-on coating, spin casting, brush coating or vapor deposition.
[0045]The thickness of the copolymer film 160 can be chosen based upon the desired pattern to be formed by the copolymers. It will be appreciated that, up to a particular thickness related to the polymer length scale and the environment in which the polymers are disposed, e.g., the distance between and the height of the guides 134, the copolymers will typically orient to form alternating, substantially lamellar domains that form parallel lines, as viewed in a top-down view (FIG. 8). Such lamellae can be used to pattern, e.g., interconnects, or the lateral extension of the lamellae can be limited to form isolated features, e.g., transistor gates. Above a particular thickness related to the polymer length scale and the environment in which the polymers are disposed, the copolymers will typically orient to form vertically-extending pillars, such as cylinders, or spheres (FIG. 9). The cylinders can advantageously be used to pattern isolated features, e.g., vias or transistor gates. Thus, the pattern to be formed can advantageously be selected by appropriate selection of copolymer film thickness. Alternatively, other variables, such as copolymer composition or process conditions can be modified to facilitate the formation of vertically extending pillars or horizontally extending lamellae for a given thickness through appropriate selection of interfacial interactions between the blocks of the copolymer as well as the substrate surfaces.
[0046]For forming lamellae, the copolymer film thickness is preferably less than about the length scale of the copolymers forming the film. For example, where the copolymer length scale is about 35 nm, the thickness of the films is preferably about 35 nm or less, more preferably, about 30 nm or less and, most preferably, about 25 nm or less. In one embodiment, the thickness is about 20 nm.
[0047]It will be appreciated that the thickness of the film 160 can be greater than, equal to or less than the height of the guides 134. As illustrated and discussed further below, a thickness which is greater than the height of the guides 134 can have advantages for providing a copolymer reservoir. In other embodiments, a thickness which is equal to or, more preferably, less than the height of the guides 134 can be advantageous by forming isolated islands of copolymers between the guides 134, thereby preventing cross-diffusion of copolymers between the islands.
[0048]While the invention is not bound by theory, it will be appreciated that the different block species can self-aggregate due to thermodynamic considerations in a process similar to the phase separation of materials. The self-organization is guided by the guides 134, which encourage the constituent blocks of the block copolymers to orient themselves along the length of the guides 134 due to interfacial interactions. It will be appreciated that the self-organization can result in a more efficient packing of the copolymer species. As a result, in some cases, the free copolymers available for the self-organization can be depleted if the copolymer film 160 extends over too large of an expanse, causing an area in the middle of the expanse to be formed without organized copolymers. Thus, in some embodiments, the copolymer film 160 is preferably sufficient thick to extend above the guides 134 to provide a reservoir of copolymers for the self-organization which occurs between the guides 134. In addition, the distance between the guides 134 can be chosen to be sufficiently small to minimize the depletion effect that can occur over large expanses.
[0049]With reference to FIG. 7, the block copolymers in the copolymer film 160 are allowed to self-organize. The self-organization can be facilitated and accelerated by annealing the partially-fabricated integrated circuit 100. The temperature of the anneal is preferably chosen to be sufficiently low to prevent adversely affecting the block copolymers or the partially-fabricated integrated circuit 100. In the illustrated embodiment, the anneal is preferably performed at a temperature of less than about 250° C., more preferably, less than about 200° C. and, most preferably, about 180° C. Advantageously, the anneal can also cause cross-linking of the copolymers, thereby stabilizing the copolymers for later etching and pattern transfer steps.
[0050]The pattern of lamellae resulting after the anneal is shown in FIG. 7. Domains 162 of one block species, e.g., PS, and domains 164 of the other block species, e.g., PMMA, alternate between the guides 134. It will be appreciated that the sizes of the block domains are determined by the sizes of the block species forming them. Thus, a seed layer or copolymer template 170 is formed.
[0051]With reference to FIG. 8, a top-down view of the partially fabricated integrated circuit of FIG. 7 is shown. The PS domains 162 can be seen alternating with the PMMA domains 164. Both domains 162 and 164 extend along the length of the guides 134.
[0052]With reference to FIG. 9, in other embodiments, the thickness of the copolymer film 160 (FIG. 6) is chosen so as to form vertically extending cylinders (or other isolated pillar shapes, including pillars having rectangular or cubic horizontal cross-sectional areas) comprising PS and PMMA, and the guides 134 are preferably chosen with a height sufficient to guide the copolymer blocks such that rows of the cylinders align in a desired direction. The resulting arrangement, from a top-down view, has regions 162a of PS surrounded by regions 164a of PMMA. Such an arrangement can be useful for forming, e.g., contact vias. In addition, the pillars can advantageously be applied in some arrangements for patterning arrays of features, particularly dense arrays of features, such as capacitors for memory applications, including DRAM. In such arrangements, the pillars can have a cylindrical, a rectangular or cubic horizontal cross-sectional area, with the rectangular or cubic pillars having advantages in some applications by providing a higher surface area structure.
[0053]With reference to FIG. 10, a supplemental layer 180 of self-organizing material is deposited over the seed layer 170 to vertically extend the pattern in the seed layer 170. The self-organizing material forming the supplement layer 180 is preferably a copolymer, more preferably a block copolymer. The material forming the supplemental layer 180 is chosen to interact with the seed layer 170 such that the domains 162, 164 and the guides 134 of the seed layer 170 are able to direct the organization of chemical species forming the material. For example, where the seed layer 170 includes polar and non-polar block species, the layer can also have polar and non-polar block species. In some embodiments, supplemental block copolymers forming the layer 180 are the same as the block copolymers of the film 160 (FIG. 6), although in other embodiments the block copolymers can be different but have chemical moieties which allow them to interact predictably with one another. Where the block species are the same, the supplemental copolymers can have the same length or different lengths from the copolymers of the film 160, although the lengths and the concentration or volume fraction of the supplemental copolymers in the supplemental layer 180 are preferably chosen to facilitate extending the pattern of the seed layer 170 into the supplemental layer 180. In addition, it will be appreciated that the supplemental layer 180 is preferably deposited to a height sufficient to form a copolymer mask with a desired height for etching underlying materials. The supplemental layer 180 can have a thickness greater than the intrinsic length scale of the copolymers forming it. Preferably, the supplemental layer 180 can have a height of about 10 nm to about 50 nm and, more preferably, about 10 nm to about 200 nm.
[0054]With reference to FIG. 11, interactions between the supplemental copolymers of the supplemental layer 180 and the domains 162, 164 and the guides 134 cause the supplemental copolymers to organize into domains 182, 184. In some embodiments, this self-organization can be accelerated by subjecting the supplemental layer 180 to an anneal such as that discussed above for the film 160 (FIG. 6). The anneal can advantageously cause cross-linking of the copolymers, thereby helping to stabilize the copolymer blocks, especially during later selective block removal steps.
[0055]With continued reference to FIG. 11, the domains 182, 184 advantageously align to form the same pattern as the domains 162, 164, as viewed from a top down view. Thus, the pattern formed by the domains 162, 164 may be said to be transferred to the supplemental layer 180 and effectively vertically extending the domains 162, 164. Preferably, the domains 162, 164 are organized in a substantially regular pattern and the domains 182, 184 are also organized in a substantially regular pattern.
[0056]Advantageously, the supplemental copolymers can repair defects in the pattern formed in the seed layer 170. For example, the seed layer 170 may include domains 162, 164 which define features, such as lines, which have very rough edges or non-uniformities in critical dimensions. Initially, certain chemical moieties or blocks of the supplemental copolymers will align themselves with particular block domains 162, 164 of the seed layer 170, which contain other chemical moieties which interact favorably with the blocks of the supplemental copolymers, e.g., to encourage wetting of particular domains with particular blocks in the supplemental copolymers. As the number of organized supplemental copolymers grows and the heights of the organized supplemental copolymer domains 182, 184 increase, however, the supplemental copolymers and process conditions may be selected such that interactions between the supplemental copolymers dominate. Advantageously, because the interactions between the blocks of the supplemental copolymers can be relatively homogeneous across the supplemental layer 180, the dominance of the interactions between the blocks can cause the blocks to self-segregate and form domains 182, 184 which are more regular and better defined than the domains 162, 164 in the copolymer template. Thus, the domains 182, 184 in the supplemental layer 180 can have greater uniformity in pitch and critical dimension than the domains 162, 164 of the seed layer 170.
[0057]In addition, the supplemental copolymers can also advantageously level out non-uniformities in thickness in the seed layer 170. For example, a relatively thick layer 180 of deposited supplemental copolymers may be less prone to form localized regions of different thicknesses than the seed layer 170, which can have thickness variations caused by interfacial interactions with an underlying surface, or by depletion of the copolymers in the copolymer template before all block domains are fully formed. As a result, because the supplemental copolymers can form domains up to a height proportional to the height of the supplemental copolymer layer, the final mask formed by the supplemental copolymers can advantageously have a more uniform thickness and, thus, greater uniformity in height]]
[0058]With reference to FIG. 12, the domains 184, 164 are selectively removed, leaving behind the domains 182, 162 and the guides 134. It will be appreciated that the domains 184, 164 can be removed in a single step using a single etch chemistry or can be removed using multiple etches with different etch chemistries. For example, where the domains 184, 164 are both formed of PMMA and the domains 182, 162 are formed of PS, the domains 184, 164 can be removed by performing a selective wet etch, e.g., using acetic acid as an etchant. In other embodiments, a dry or anisotropic etch may be appropriate where one of the domains can be etched at a faster rate than the other. It will be appreciated that the dimensions of the resulting features can vary, depending on the size of the copolymer used and process conditions. In some embodiments, the resulting pattern can advantageously comprise PS domains having a critical dimension of about 50 nm to about 2 nm, more preferably, about 35 nm or less to about 3 nm, with a pitch of about 100 nm to about 4 nm and, more preferably, about 70 nm to about 6 nm. For example, the PS domains can have a critical dimension of about 35 nm, with a pitch of about 70 nm. It will be appreciated that in other embodiments, the domains 162 and/or the guides 134 can be removed instead, thereby leaving the domains 184, 164, with or without the guides 134.
[0059]With reference to FIG. 13, the domains 182, 162 and the guides 134 can be used as a mask for processing of the underlying substrate 110. For example, as illustrated, the substrate 110 can be etched through the mask using, e.g., an anisotropic etch that selectively etches the substrate relative to the domains 182 to transfer the pattern in the mask to the substrate 110. In one example, where the substrate 110 is formed of silicon, it can be selectively etched relative to the block domains 182 using a fluorine-based dry etch chemistry, e.g., such as that used to selectively remove silicon layers relative to photoresist. It will be appreciated that where the substrate 110 comprises layers of different materials, a succession of different chemistries, preferably dry-etch chemistries, can be used to successively etch through these different layers, if a single chemistry is not sufficient to etch all the different materials.
[0060]It will also be appreciated that, depending upon the chemistry or chemistries used, the domains 182, 162 and the guides 134 may be partially etched or worn during the transfer process. Advantageously, the domains 182 are sufficiently tall to allow etching or other processing of the substrate 110 to be completed before the domains 182 and/or 162 are completely etched away. Consequently, the tall domains 182 can facilitate etching of more difficult to etch substrates.
[0061]With reference to FIG. 14, the mask overlying the substrate 110, including the domains 182, 162 and the guides 134, are stripped, leaving the patterned substrate 110. With reference to FIGS. 15 and 16, the pattern formed in the substrate 110 can comprise, for example, lines (FIG. 15) or isolated pillar shapes, or conversely cylindrical holes (FIG. 16). The lines can form, e.g., interconnects for connecting electrical devices, preferably devices arranged in an array, such as the electrical devices which form memory cells in the array region of a memory device. In addition, the isolated pillar shapes can form electrical devices, which are preferably disposed in an array, such as capacitors for memory cells in a memory device. After the lines or isolated pillar shapes are formed, the partially fabricated integrated circuit 100 is subjected to subsequent processing steps, including forming ancillary electrical devices and electrical interconnects, to form a completed integrated circuit, e.g., a memory chip.
[0062]It will be appreciated that various modifications of the preferred embodiments are possible. For example, as noted above, the copolymer film 160 can be formed to a thickness below the height of the guides 134 (FIG. 6). In addition, the guides 134 can also be formed to have a height higher than the upper surface of the supplemental layer 180 (FIG. 11). In some embodiments, this may be advantageous for increasing process latitude by eliminating the need to provide supplemental copolymers which interact appropriately with the guides 134 to align with those guides 134.
[0063]Moreover, while discussed in the context of diblock copolymers, the copolymers can be formed of two or more block species. In addition, while the block species of the illustrated embodiment are each formed of a different monomer, the block species can share monomer(s). For example, the block species can be formed of different sets of monomers, some of which are the same, or can be formed of the same monomer, but in a different distribution in each block. Preferably, the different sets of monomers form blocks having different properties which can drive the self-organization of the copolymers.
[0064]In some embodiments, the hardmask and/or temporary layer overlying the substrate can be omitted. For example, the photodefinable material can be formed of or replaced by a material which is compatible with the temperatures and other conditions for copolymer self-organization and/or the copolymer blocks may be used as a mask for etching the substrate where an etch having sufficient selectivity for the substrate is available.
[0065]Also, while "processing" through a mask layer preferably involves etching an underlying layer, processing through the mask layers can involve subjecting layers underlying the mask layers to any semiconductor fabrication process. For example, processing can involve ion implantation, diffusion doping, depositing, oxidizing (particularly with use of a hard mask under the polymer mask), nitridizing, etc, through the mask layers and onto underlying layers. In addition, the mask layers can be used as a stop or barrier for chemical mechanical polishing (CMP) or CMP can be performed on any of the layers to allow for both planarization and etching of the underlying layers, as discussed in U.S. patent application Ser. No. 11/216,477, filed Aug. 31, 2005, the entire disclosure of which is incorporated by reference herein.
[0066]In addition, while illustrated applied to an exemplary sequence for fabricating integrated circuits, it will be appreciated that the preferred embodiments can be applied in various other applications when the formation of patterns with very small features is desired. For example, the preferred embodiments can be applied to form gratings, disk drives, storage media or templates or masks for other lithography techniques, including X-ray or imprint lithography. For example, phase shift photomasks can be formed by patterning a substrate which has a film stack having phase shifting material coatings.
[0067]It will be appreciated from the description herein that the invention includes various aspects. For example, according to one aspect of the invention, a method for forming a pattern over a semiconductor substrate is provided. The method comprises providing a template comprising a pattern defined by domains formed of like blocks of a block copolymer. A layer of self-organizing material is deposited on the template. The pattern is transferred to the layer of self-organizing material.
[0068]According to another aspect of the invention, a method for forming a mask pattern is provided. The method comprises depositing a layer of block copolymers. Blocks of the block copolymers are segregated to form domains comprising blocks of the block copolymers. The domains are subsequently vertically extended.
[0069]According to yet another aspect of the invention, method for forming a mask pattern is provided. The method comprises providing a substrate having an overlying block copolymer material disposed between guides for copolymer alignment. A first substantially regular pattern of block domains is provided between the guides for copolymer alignment. An additional block copolymer material is deposited over the first substantially regular pattern. A second substantially regular pattern of block domains is formed over the first substantially regular pattern.
[0070]According to another aspect of the invention, a partially fabricated integrated circuit is provided. The partially fabricated integrated circuit comprises a first plurality of regularly spaced copolymer block domains overlying a substrate. A second plurality of regularly spaced copolymer block domains is formed on the first plurality of copolymer block domains.
[0071]In addition to the above disclosure, it will also be appreciated by those skilled in the art that various omissions, additions and modifications may be made to the methods and structures described above without departing from the scope of the invention. All such modifications and changes are intended to fall within the scope of the invention, as defined by the appended claims.
Patent applications by Gurtej S. Sandhu, Boise, ID US
Patent applications by Steve Kramer, Boise, ID US
Patent applications by MICRON TECHNOLOGY, INC.
Patent applications in class Including etching substrate
Patent applications in all subclasses Including etching substrate
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CHS Has Much To Offer As OLBA-Endorsed MCO As Managed Care Organization
Published: 05/16/2006
OLBA members will be receiving information about selecting a Managed Care Organization in May, the open-enrollment period. As you, as employers, enter this open enrollment period, it is appropriate to revisit how your selection of an MCO ultimately can have an impact on your bottom line. In short, choosing the right MCO can provide you substantial savings for the next two years.


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FAYETTEVILLE, Ark. -- Arkansas' Houston Nutt and Texas A&M's Dennis Franchione will coach the annual Shrine East-West Game all-star contest featuring college football standouts from across the nation in January.
Jack Hart, executive director of the event, announced the selection in a news release Tuesday. Nutt will coach the East squad, and Franchione will coach the West squad.
The game will be played Jan. 21 at the Alamodome in San Antonio, Texas, and telecast nationally on ESPN2. It's the first time the game has been played outside San Francisco since the first Shrine Game in 1925.
"I'm honored to be asked to be a part of this prestigious game," Nutt said. "The East-West Shrine Game has a tradition of attracting some of the best talent in college football as well as making a difference in communities all over the nation."
He said he would be pleased to "contribute in a small way to the great work of the Shriners Hospitals" and other charitable causes that benefit from the game.


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by Montgomery Blair Sibley, ©2013, blogging at Amo Probos
(Feb. 20, 2013) — Below is my letter to the House and Senate Judiciary Committees written in response to the denial of my Petition for Certiorari by the U.S. Supreme Court on February 15, 2013:
It shall be the duty of each such grand jury impaneled within any judicial district to inquire into offenses against the criminal laws of the United States alleged to have been committed within that district. Such alleged offenses may be brought to the attention of the grand jury by the court or by any attorney appearing on behalf of the United States for the presentation of evidence. Any such attorney receiving information concerning such an alleged offense from any other person shall, if requested by such other person, inform the grand jury of such alleged offense, the identity of such other person, and such attorney's action or recommendation. (Emphasis added).
Tags: Amo Probos, Barack Hussein Obama, Certificate of Live Birth, Congress, grand jury, Harvard Law School, Montgomery Blair Sibley, Obama's COLB, Petition for Certiorari, U.S. Attorney Ronald C. Machen, U.S. Constitution, U.S. Supreme Court, usurpation, wire fraud
Categories: Editorials


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It's not just kids who enjoy coloring! Adult coloring books are extremely popular nowadays, with millions sold in the last couple of years. Get in on this trend and supply your staff and clients with a fun, quirky, and unique gift from ePromos that promotes your brand's creative side. We have everything from books to crayons and art accessories, all upon which we can put our own artistic touches, including your logo, for a design that's sure to reflect your brand's personality.
Double your coloring fun with this box of eight custom crayons.
This box of four brightly colored promotional crayons is a great positive image builder.
Make going back to school even more rewarding with this Zippered 3-Ring Logo Pencil Case that comes in cool colors.
The Flash Teaches Fire Safety Promo Coloring Book is a 16 page coloring book where Flash the dalmatian teaches valuable fire safety.
Zippered 3-Ring Promotional Organizer will help keep you organized and never wondering where to go for pens.
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Here are the five most-viewed stories on NJ.com from yesterday, plus a story you may have missed.
1. Revolting? National Enquirer publishes Whitney Houston casket pic. In its March 5 edition, The National Enquirer tabloid has published a cover photo that appears to be Whitney Houston lying in an open casket.
2. N.J. among most unfavorable states in nation, poll shows. Only California fared worse in the poll. Why do you think New Jersey is seen so unfavorably?
3. Authorities: North Bergen Target employee staged accident to collect workers' comp, but scheme was caught on video. Victoria Colon loosened a shelf in the storeroom that caused the boxes to fall when she bumped into it. She then positioned herself under the boxes before pulling a shopping cart containing additional items onto herself. She also hit herself on the head with some batteries.
4. Christie's sympathetic view of Whitney Houston's addictions shaped by rehab center observations. Houston's death and his experience attending her funeral on Sunday strengthened Christie's resolve to set up mandatory drug treatment for nonviolent offenders.
5. Three Jersey City bars reject Snooki and JWoww. Don't roll out the welcome mat just yet: three Jersey City bars (Skinner's Loft, Barcade and LITM) say that Snooki and JWoww are not welcome. But other bars are more than willing to accommodate them, places like Pint and Bar Majestic.
In Case You Missed It:
One story that wasn't among the most-viewed but may interest readers:
Port Authority posts online 'Wall of Shame,' for worst toll violators
Want to see who owes the most in tolls and fines to the Port Authority? Now you can, thanks to the list they posted on their website, called the "Wall of Shame." Do you think public shaming is an appropriate measure to take against scofflaws?


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realmagick.com The shrine of knowledge.
Bob The Builder Crew
A selection of articles related to bob the builder crew.
Original articles from our library related to the Bob The Builder Crew. See Table of Contents for further available material (downloadable resources) on Bob The Builder Crew.
- The Aeonic Perspective of the Enochian Temples
- The initiatory system of the Enochian Temples divides the path of initiation into four major stages, distinguished primarily by the types and sources of the influences they are sensitive to. Briefly, these stages are: 1. Lunar-planetary, focused in Yesod and...
Magick >> Enochian
- Bringing it Down to Earth: A Fractal Approach
- 'Clouds are not spheres, mountains are not cones, coastlines are not circles, and bark is not smooth, nor does lightning travel in a straight line.' B. Mandelbrot W e want to think about the future - it's our nature. Unlike other creatures, humans possess an...
Mystic Sciences >> Astrology
- Mother Of The Gods And The Father Of The Gael
- There is no surviving, or as yet translated, Creation story within Irish mythology. We learn from the Lebor Gabala Erenn, a text from the Christian Middle Ages, of the Tuatha De Danann, or "People of the Goddess Danu", who came to Ireland either...
Deities & Heros >> Celtic, Welsh, Irish & Brittish
- Select Cross-Cultural and Historical Personifications of Death
- This extensive introduction includes some of the more well known, along with some lesser known Death "incarnations", and I use that term loosely, as in many cultures, the Angel of Death can be quite an adept shapeshifter. We have tried to cull...
Mystic Sciences >> Necromantic Studies
- The Celtic Vedic Connection, Part I
- Of all the great ancient cultures perhaps no two share more parallels than those of the Celtic and Vedic peoples. A deep rooted affinity runs between them, what is present in one is mirrored in the other. Myths, Gods, Goddesses, even fairy tales bear a...
Religions >> Druidism
Bob The Builder Crew is described in multiple online sources, as addition to our editors' articles, see section below for printable documents, Bob The Builder Crew books and related discussion.
Suggested News Resources
- SXSW 2016 music lineup: Here's the complete list
- B-Ham With The Tru & Livin Crew (Houston TX). B.I.
- 'Teen Mom OG' Star Amber Portwood's Fiance Matt Baier Sets the Record Straight
- Putting rumors to rest. In an exclusive interview with Us Weekly, Teen Mom OG star Amber Portwood's fiancé, Matt Baier, sets the record straight about allegations that he secretly fathered seven children with multiple women.
- Answer Man: What's the story behind old boat sitting on Bass Pro property?
- Excavation crews have removed 25,000 truckloads of rock and soil in the hope the site will become a tourism draw, according to Bass Pro officials. Bob Sommer, 47, of New Berlin, Wisconsin, is the great-grandson of the boat builder.
- theartsdesk Q&A: Musician Youth
- I do it but I get impatient and bodge it. However, it is similar to constructing music. I can see the parallels with being a builder because my dad would be organising teams of people, schedules, budgets, deliveries.
- 2016 Atlanta SX | Monday Kickstart
- Lars Lindstrom has taken on a new role with Team Honda HRC and now shares engine building duties with Bob Reichman for the motocross team. Lindstrom and Reichman sign ...
Great care has been taken to prepare the information on this page. Elements of the content come from factual and lexical knowledge databases, realmagick.com library and third-party sources. We appreciate your suggestions and comments on further improvements of the site.
Bob The Builder Crew Topics
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© 2000 - 2016 Realmagick.com, All Rights Reserved.


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Quad Extreme
Quad Extreme takes quadding to a whole new level.
Quad Extreme is an unforgettable hour long session in our AMAZING woodlands - designed to test your skill as you navigate terrain and obstacles! Buy a single session (other drivers will be on the course with you), or get together with 4 friends to quad together!
Suitable for ages 16 and over. No driving licence required.
Login or Register to Book


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1199 Panigale '12-'14
DENALI D2 Dual Intensity LED Motorcycle Lighting Kit with Full Wiring Harness and M8 MountWhen bright is not bright enough, grab a set of DENALI D2 LED Lights from Twisted Throttle. Small and BRIGHT, with an effective beam distance of 423ft and still an incredibly small power draw! Learn More$379.99
Denali DX Xtreme Spot Dual Intensity LED Lighting Kit with Full Wiring Harness and M8 Mount
The large 10° optic in the DX maximizes the distance you can see down the road by concentrating a spot beam pattern at the center of the road. The DX is ideal for night riding in on/off road conditions where maximum beam distance is desired. Consuming only 10 watts of power per lamp, the Denali DX lights throw a blazing beam of light 695 feet down the road in front of you. That's over 4 times further than your typical motorcycle high beam.Learn More$389.99
SW-MOTECH Bags-Connection Blaze Sport Saddlebag System for Ducati 1199 Panigale '12-'15 & 899 Panigale '14-'15
The SW-MOTECH Bags-Connection Blaze Sport Saddlebag System offers an innovative way to mount soft saddlebags onto sport-style motorcycles. The system features mounting arms that quickly attach to the motorcycle and then slip into channels located on the backside of each bag. These arms ease installation and support the bags to prevent side-to-side movement and potential contact with the exhaust or rear tire. The mounting arms detach quickly to retain the stock look of the motorcycle when the bags are removed. The SW-MOTECH Bags-Connection Blaze Sport Saddlebags feature durable YKK RC-Fuse zippers and are expandable from 14 to 21 liters per bag.Learn More$371.95
SW-MOTECH Bags-Connection QUICK-LOCK EVO Sport 12v Electric Tank Bag | 14-21 LiterThe Electric QUICK-LOCK EVO Sport Tank bag is a medium size 14-21 liter tank bag suitable for bikes with large, flat tanks. Compatible with the SW-MOTECH Bags-Connection EVO QUICK-LOCK Tank Rings, see the app chart below to determine which type is appropriate for your bike. Learn More$361.95
R&G Aero Style "No Cut" Frame Sliders for Ducati Panigale 899 '13-'15, Panigale 959 '16, Panigale 1199 '12-'14 & Panigale 1299 '15-'16 | Black
These crash protectors boast sleek looks with aerodynamic & tear shaped bobbins. Install the R&G Aero Style "No Cut" Frame Sliders to save yourself from having to make some seriously expensive repairs in the event of a bike drop or accident. Suitable for the varying models of the Ducati Panigale, these crash protectors are uniquely designed with a black powder coated, stainless steel bracket with blocks that eliminate the need to modify your fairing. Sweet... you can put down that drill and install these frame sliders hassle free!Learn More$360.95


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This project involved reconstructing existing tracks, realigning curves, adding a second set of tracks and constructing a new railroad bridge carrying the North Carolina Railroad tracks over Hopson Road in Wake County.
The improvements will help increase train speeds and reduce travel times for passenger service. The addition of a second track will allow passenger trains to pass slower freight trains, improving service reliability. The new bridge over Hopson Road will reduce the risk of automobile/train collisions, improve safety for automobile and rail passengers, and reduce automobile and train traffic congestion.
This project is among improvements to the North Carolina Railroad corridor between Raleigh and Charlotte to increase railroad capacity, efficiency, and safety.
Grading and bridge contract was awarded in December 2012.
Construction was completed in July 2016
View all news releases
Phillip Townsend, P.E.
In many cases, it is inevitable that a certain amount of private property must be acquired. The displacement of homes and businesses is minimized to the extent practicable. The following brochures will answer questions about this process.


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May 7, 2009
Shower at Watts, originally uploaded by coming2cambodia. Earlier this week my mother mentioned that she was going to take my father out to Watt's Tea Room for lunch. She and I had gone 2 weeks ago and he had been complaining that he was left out. Since I really love Watt's, I invited myself along. … More Surprise!


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Product DescriptionLinea Elderflower and Lime diffuser and votive set.
Includes mini diffuser and reeds and two votives.
Energising green lime with an intricate floral heart led by sweet Elderflower, linden and soft woods makes this diffuser perfect in any room. Combine with other items from this range to fill your house with gorgeous fragrance.
Fragrance Notes
Top: Orange, Green
Mid: Floral, Lavender, Ylang, Fruit
Base: Woody, Cedarwood
- Fruity
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We hope you will love your new things but if you don't, you are welcome to return your items free of charge. Here's how to do it:
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Bring your items and proof of purchase into store within 28 days from the day your parcel arrives, for a full refund via the original payment method.
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You will need to return your goods by post, if PayPal was your original payment method and you would like the refund back to your account. If you make your return to a store, we will only able to give you a House of Fraser gift card to the same value. You'll still have 28 days to return.


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I chose Longwell Hall on a recommendation from a local resident. The owner was kindly and well informed, but not over-bearing. The house was well set up and decorated without being fussy and pretentious. The room I stayed in was nicer than it looked on the website and the bed was very comfortable. My room had access to an upper story porch which was a wonderful place to catch a summer breeze and relax.
The location was great; easy to catch trains to downtown or just to wander the Oak Park/River Forest area. The breakfast was really tasty with fresh fruit and home baked quick bread. I would definitely stay there again.


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On 10/23/2012 09:31 AM, Daniel P. Berrange wrote: > On Tue, Oct 23, 2012 at 02:16:44PM +0200, Ján Tomko wrote: >> We put a comment containing "virsh edit <domain_name>" at the start of >> the XML. W3C recommendation forbids the use of "--" in comments [1] and >> libvirt can't parse it either. This patch omits the domain name if it >> contains a double hyphen. > > I'd really rather that we properly escaped the data rather than > just dropping it. Since the whole point of that comment is intended to give the user something they can paste into their shell, we could just escape it by doing: s/--/-''-/. And for that to work, we'd also need to shell-escape any other metacharacters in the domain name, so that the entire line is something that can easily be copied and pasted. -- Eric Blake eblake redhat com +1-919-301-3266 Libvirt virtualization library http://libvirt.org
Description: OpenPGP digital signature


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U.S. Masters Swimming Articles & Videos Presented by
Fitness / Training
Coaches will give instructions mainly in terms of distance (or yardage) and time. Most American pools are 25 yards in length and are known as short course yards pools or SCY. To understand the sets, you'll need to add in multiples of 25.
Fitness / Training
A related question would be: Why are swimmers so obsessed with time? You'll find out, my friend, in due time. So, what is your time for a 100? Answer that question, and you are halfway to speaking Swimmerese.
Fitness / Training
Swimming is great exercise, but practicing with a group can seem mysterious to the uninitiated. Can I just show up? Are other swimmers going to laugh at me? If your questions are even more basic than that, you may first want to review our Let's Get Started page.
Fitness / Training
Not much! The beauty of swimming is that the water provides all the resistance you need to work every part of your body. No machine can match it.
Fitness / Training
Safety always comes first, and swimming's first rule is never to swim alone. Because you will always be swimming with other people, offer them the type of respect you wish to receive. Swim friendly....
Coaching / Fitness / Sports Medicine
Are you feeling stuck? Have you been stressed lately? We all deal with adversity at some point in our lives. The key is to know how to manage these moments and still feel good about ourselves. Step...
This month's American Swimming Coaches Association magazine SWIMMING addresses an important issue. The children joining their swim teams are not as fit as they used to be. The general consensus is...
The USMS website contains articles about sports medicine, health, and nutrition. This information is not intended to be a substitute for professional or medical advice on personal health matters. For personal medical advice, or if you are concerned about a medical condition or injury, see your healthcare provider for evaluation and care. The USMS website also contains articles about swim training and technique, including drills and workouts. All swimmers should be evaluated by a healthcare professional prior to beginning swim training. In addition, consult with a trained coach when introducing new technique or drills to your swim training program.


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Houses for Rent in 70113, LA
|299 Listings Found
Spacious 3 beds, newly remodeled, mantle, cathedral ceilings, front porch, small back yard, central a h, washer-dryer hook 4M2DB4 ups,...
1723 Clio St, New Orleans, LA, 70113Details »
This space features hard wood floors and exposed brick walls in a great building with great ownership.
839 St Charles Avenue, New Orleans, LA, 70130Details »
Available now
6th St, New Orleans, LA, 70115Details »
one BEDROOMs one BATHROOMs Home for rent in New Orleans LA 70130 Only $835 Per Month...Visit Rentmint.com to find apartments for rent,...
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Wonderful views from your 2nd floor balcony and living room with 3 floor to ceiling windows. This 2 beds 1.5 bathrooms house, with...
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2720sf commercial space downstairs. Hot area of Magazine, just across from Sophie B Wright Park & Il Mercato event venue and between...
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MUST SEE THIS CARRIAGE HOUSE! one BEDROOMs 1 1 two BATHROOMs WITH ALL APPL S AND CLOTHS WASHER AND DRIER CT. YARD AND PRIVATE...
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Recently remodeled, complete furnished Lower Garden District rental with elegant interiors and finishes. Includes front porch,...
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New Orleans Up-to-date vintage half double in the Lower Garden District. Unit features original wood floors, mantles, guillotine...
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This tri-level Federal Fibre Mills unit is in pristine condition and has many historical elements- cathedral ceilings, exposed brick,...
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Home for rent in New Orleans. Stove Refrigerator Included. Close to 4M9XM3 dining and shops, bright, gas stove, trash included.
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Beautiful Broadmoor Home for Lease with architectural designs- wood floors- freshly re-finished; curved detail between living and...
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