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Encana Corp. is North America's second-largest natural gas company. Just don't tell Encana that.
Eric Marsh, the company's man in charge of its U.S. division, on Tuesday tried to hammer home a message Encana has been touting for months. It is expanding its natural gas liquids production. It is searching for oil. It has been stealthily collecting land housing these more valuable resources for ages now. It has more oil and natural gas liquids announcements coming down the pipe. So don't just call it a natural gas company.
Encana, he noted, produces about 3.3 billion cubic feet of natural gas per day and controls about 12 million acres of land. And then his 30-minute presentation to investors in Vail, Colo., turned to natural gas liquids and oil. Products like propane and butane are more valuable than natural gas right now, and Encana wants everyone to know they are on the case.
"We also have a significant liquids portfolio," Mr. Marsh said. "Our portfolio also includes large land positions in what we believe to be highly prospective oil and liquids-rich natural gas plays. We [own]more than 2.1 million acres that is prospective for natural gas liquids and oil."
The company wants to triple its liquids production by 2015, he said. By tripling production, Encana will produce about 80,000 barrels of liquids per day. An impressive jump, but as Canaccord Genuity analyst Phil Skolnick told a local Calgary paper in October, old-school natural gas will still make up a whopping 87 per cent of Encana's production.
Mr. Marsh addressed this, distancing the company from its roots. "Although it is obvious that the more mature parts of our portfolio are dry gas, you can also clearly see that we have captured significant land positions in emerging liquids rich and oil plays. Positions that we have been quietly building over the past couple of years. We will be advancing many of these plays in the upcoming years while slowing growth in our dry gas development during this extended period of low natural gas prices."
The emphasis on years is clutch. Critics argue Encana is late getting into the liquids game. Encana is trying to convince investors it has been there for years. It says it is building its liquids operation in the same way it built its unconventional natural gas business – under cover.
Encana executives have been trying to pitch this unconventional natural gas history – the way it collected land, successfully explored, and prolifically produced natural gas – as key to its revised strategy.
"In the next few years, we expect to significantly increase the proportion of liquids production in our portfolio, and have increased our pace of exploration on our oil and natural gas liquids plays. Ultimately, this should enable us to diversity our portfolio and increase our returns, while at the same time, allowing us to take advantage of our expertise that we have developed in drilling and completing long-reach horizontal wells in our natural gas resource plays."
Mr. Marsh detailed how the company has changed over the years. It ditched its international assets, favoured unconventional natural gas plays over shallow gas, hived off oil assets, and moved away businesses such as gas storage. The he rattled off a list of Encana's primary producing assets and noted many of these were not under the company's control "just a few short years ago." The company did it all from scratch, he said.
"It is what we do well at Encana," he said.Report Typo/Error
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These correlations were often ignored in related calculations since they were thought to be small and not capable of making a significant difference.Our explicit calculations show that though the correlations start off very small, they grow in time and become large enough to change the outcome.
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|Publication number
|Publication type
|Application number
|Publication date
|May 2, 1995
|Filing date
|Sep 22, 1992
|Priority date
|Sep 22, 1992
|Fee status
|Publication number
|David W. Treat, David P. Bour, Thomas L. Paoli
|Original Assignee
|Xerox Corporation
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (7), Non-Patent Citations (22), Referenced by (76), Classifications (26), Legal Events (6)
|External Links: USPTO, USPTO Assignment, Espacenet
(1) Commonly-assigned, concurrently filed application Ser. No. 07/948,531, filed Sep. 22, 1992, entitled "Diode Laser Multiple Output Scanning System" (D/91293-IP/902080) in the name of Thomas L. Paoli.
(2) Commonly-assigned, concurrently-filed application Ser. No. 07/948,522, filed Sep. 22, 1992, entitled "Polarization Switchable Quantum Well Laser" (IP 911705) (XRX-126).
(3) Commonly-assigned, concurrently-filed application Ser. No. 07/812,238, filed Dec. 19, 1991, entitled "A raster Output Scanner for a Single Pass Printing System which Separates Plural Laser Beams by Wavelength and Polarization", in the names of James J. Appel and Thomas L. Paoli.
This invention relates to a semiconductor quantum well laser, and, in particular, to a monolithic quantum well laser capable of differently polarized multiple emissions, specifically with orthogonally polarized beams.
Quantum well (QW) lasers normally oscillate in the transverse electric (TE) polarization rather than the transverse magnetic (TM), because the n=1 heavy hole transition is the fundamental (lowest energy) transition, and the lowest energy state is the state whose population is most easily inverted. This is true for both unstrained GaAs and compressively strained InGaAs/AlGaAs and InGaAs/InGaAsP/InP QW lasers. The heavy hole is lowest in energy because the quantum shifts are inversely proportional to the effective mass; therefore the light hole levels are shifted to higher energies than the heavy hole levels. Additionally, in compressively strained InGaAs/AlGaAs and InGaAs/InGaAsP lasers, the strain leads to an even greater difference between these levels.
Transitions involving the heavy hole band have a 3:0 asymmetry for TE:TM mode gain, while those involving the light hole levels have a 1:4 asymmetry for TE:TM mode gain. Such a gain anisotropy does not occur in double heterostructure (DH) lasers, which have a bulk-like active region. This is why, in a QW laser, the TE-mode gain arises from the heavy hole transition, while the TM-mode gain is provided by the light hole transitions.
The first related application Ser. No. 07/948,531, whose contents are hereby incorporated by reference, discloses the implementation of monolithic, multiple beam laser diode sources for use in multistation xerographic processors with single optics. The devices in this implementation could produce laser beams with two nearly orthogonal polarizations. A quadbeam laser diode device implemented with this concept would permit considerable simplification in a four-beam optical system through the use of beam separation by polarization at two wavelengths. The quadbeam laser device is achieved by appropriate orientation of closely spaced laser chips within a single integrated package or by the relative orientation of the linearly polarized beams emitted by a monolithic laser array. Such monolithic arrays are obtained, for example, by combining the multiple wavelength techniques disclosed in U.S. Pat. No. 5,048,040 issued to Paoli with the multiple polarization techniques disclosed herein.
An object of the invention is an improved multi-beam QW semiconductor laser.
A further object of the invention is a semiconductor monolithic QW laser having two or more active regions, with each region emitting such that each region emits a beam having one of the two orthogonal polarizations.
An aspect of the present invention is based on the discovery that active portions of a semiconductor QW laser can be caused to selectively emit TE or TM polarized emissions. This is based upon the following observation that in a structure where the light hole and heavy hole band edges are reversed, such as can occur in a tensile-strained active region, the resulting polarization is TM. This has been observed in tensile strained InGaAsP/InP Qws and in both bulk and QW devices in the GaInP/AlGaInP/GaAs material systems. We have further discovered that the polarization mode of a QW laser is a function of the composition and thickness of the active quantum well (QW) layer.
Taking advantage of this aspect of the invention, a monolithic device structure can be constructed which provides dual polarized beams. Moreover, the construction can provide that the separate laser diodes have similar threshold currents. Thus, they can be activated by the same controller yet be separately modulatable.
While a GaInP/AlGaInP QW structure is used as an example, this concept could also be applied to other material systems where tensile-strained QWs are possible, for example GaAsP/AlGaAs, and InGaAs/InGaAsP/InP.
The device of the invention offers a number of advantages. An important benefit is the construction of closely spaced multiple beam diode sources in a common substrate for various applications needing adjacent beams with orthogonal polarizations, for example, for a printer with a monolithic, two beam diode laser. Important also is that the differently polarized beams are generated from semiconductor active body portions that are otherwise physically similar.
These and further objects and advantages of the invention will be best understood in connection with the detailed description that follows of several embodiments of the invention, taken in conjunction with the accompanying drawings.
FIGS. 1A-C is a schematic view of the energy band structure of a QW laser to explain principles underlying the invention;
FIG. 2 is a graph plotting QW thickness v. QW composition illustrating TE/TM mode transitions;
FIGS. 3A-C schematically illustrate various devices in accordance with the invention;
FIGS. 4A and 4B are, respectively, cross-sectional and top views of one form of multiply-emitting QW laser in accordance with the invention;
FIG. 5 is a graph illustrating how to control the desired polarization mode;
FIG. 6 is one form of a circuit schematic for operating the device of FIG. 4;
FIG. 7 shows another laser construction in accordance with the invention with fixed polarization modes;
FIG. 8 shows another laser construction in accordance with the invention for selectively controlling the polarization mode;
FIG. 9 is a schematic view of a laser construction in accordance with the invention based upon the band diagrams of FIG. 8;
FIG. 10 shows still another laser construction in accordance with the invention.
For background material, reference is made to the attached Appendix, which lists a number of publications in this field. In addition, reference from time to time will be made to those published papers by a bracketed number for disclosure relevant to this application but which need not be repeated here, the contents of which are hereby incorporated by such references.
As indicated above, quantum well (QW) lasers normally oscillate in the TE polarization, because the n=1 heavy hole transition is the fundamental (lowest energy) transition, as shown in FIG. 1. In FIG. 1, the upper set of lines 10 represent the lower bound of the conduction band, the lower set of lines 11 represents the upper bound of the valence band, and the forbidden bandgap is designated 12.
The notation used is:
HH=Heavy hole energy level. A numerical subscript of 1 means that n=1, or the fundamental, lowest energy transition.
LH=Light hole energy level, with the same meaning given to numerical subscripts.
ε1 =Electron level 1 in the conduction band.
The transitions are indicated by arrows. As shown in FIG. 1a, the transition 15 from the electron level ε1 to HH1 18 is lower in energy than the corresponding transition 16 to LH1 19.
This is true for both unstrained GaAs/AlGaAs, and GaInP/AlGaInP, and compressively strained InGaAs/AlGaAs, GaInP/AlGaInP, and InGaAs/InGaAsP/InP QW lasers. In unstrained bulk material the HH and LH levels are degenerate at the bandedge. However the quantum size effect in quantum wells shifts the LH farther from the bandedge as shown in FIG. 1a because the quantum shifts indicated by arrows 13 are inversely proportional to the effective mass. Thus the energy of the transition from ε1 to HH1 is lowest. In compressively strained bulk InGaAs/AlGaAs and InGaAs/InGaAsP the HH and LH levels are nondegenerate and the quantum size effect leads to an even greater split between these levels, as shown in FIG. 1b.
In a structure where the light hole and heavy hole band edges are reversed, however, such as can occur in a tensile-strained active region, lasing occurs in the TM polarization. This has been observed in tensile strained InGaAsP/InP QWs and in both bulk and QW devices in the GaInP/AlGaInP/GaAs material systems [2-5].
In accordance with this aspect of the invention, in a device incorporating separate QWs for TE-and TM-mode gain, the polarization of the emission will be a sensitive function of the threshold carrier density (which determines the degree to which the individual band populations are inverted), and other factors such as temperature, facet reflectivity, intracavity loss, cavity length, etc. Such a device structure would allow either polarization to be selected, or switched which is described and claimed in the second referenced related case. This is accomplished with a tensile-strained QW or multiple QWs for TM-mode gain, and compressively-strained or unstrained QWs for TE-mode gain. Alternatively, it can be accomplished with the same QW whose LH and HH band edges line up substantially exactly. This condition is sometimes referred to as near-degeneracy at the band edge, at k=0. This normally means that the band edges are within a small fraction of one kT in energy of one another. Adjustment of the other factors will then determine whether the emitted beam is TE or TM polarized.
Shown in FIG. 1c is the band alignment for this alternative which will allow both polarizations. In the valence band, tensile strain shifts the LH band edge 21 above that of the HH 22. Since the light holes undergo a greater quantum shift than the heavy holes, however, the light hole state is the lowest energy state only for bulk material or for thick wells. At the other extreme, for very thin wells, the heavy hole state can have lowest energy, because it is not quantum shifted to as high an energy as the light hole. Thus, there exists some intermediate thickness where the light hole and heavy hole band edges can line up exactly.
Using parameters from Ref. [6] in a simple square-well potential model which includes the effect of strain [7], this crossover thickness is shown by the curve 25 in FIG. 2, as a function of Gax In1-x P QW composition, clad by lattice-matched (Al0.6 Ga0.4)0.5 In0.5 P; the lattice matched (to GaAs) alloy has X=0.516. While the exact crossover thickness is a sensitive function of the effective masses and band offsets, which may not be well documented, it is clear that there is an inverse relationship between the strain (which increases the LH-HH split) and the crossover thickness (which must be made thin to compensate).
For a diode laser with a QW of this appropriate thickness derived from FIG. 2, the resulting polarization could be either TE or TM, depending upon the gain anisotropy, and band-filling at threshold. For thicknesses greater than the crossover thickness (to the right of curve 25), TM polarization is observed [2,3,5], while for thicknesses less than the crossover thickness (to the left of curve 25), TE polarization results. Typical QW thicknesses range between 20-300 Å.
The present invention takes advantage of the relationship depicted in FIG. 2 to construct a monolithic QW laser with orthogonally-polarized beams by controlling the thickness and the composition of the active QW layer.
Preferably, one of the constant contour lines referenced 26-30 is chosen, so that the emitting wavelengths are substantially the same, and one active layer is built according to parameters on the right side of the crossover curve 25, and the other active layer is built according to parameters on the left side of the crossover curve 25.
Thus, if, for example, constant contour line 30 is chosen, which is nearly horizontal, then both active layers can have the same thickness (40 Å) but different compositions to achieve different polarizations. The points referenced 31, 32 are examples. The TE mode active layer composition would be Ga0.55 In0.45 P, whereas the TM mode active layer composition would be Ga0.6 In0.4 P.
Alternatively, if a nearly vertical constant contour line 26 were chosen, then the emitting wavelength would be substantially 650 nm, and the same composition could be used for both active layers, the different modes being achieved by different QW layer thickness. See the points referenced 34, 35. The TE mode active layer would have a thickness of about 170 Å, and the TM mode active layer a thickness of about 220 Å, both with the same Ga0.52 In0.48 P composition.
The present invention is not limited to achieving TE and TM mode QW lasers in the same monolithic structure by varying the thickness and/or composition of the active QW layer. As FIG. 1c indicates, if both active layers are in near degeneracy at the band edge, then whether the laser will oscillate in the TE or TM mode will depend upon other factors, such as, the diode geometry, its threshold current, its reflectivity, temperature, length, etc. Hence, in accordance with this aspect of the invention, the active layers are given the same composition and thickness, preferably lying on the crossover line 25.
Using this critical structure, there are several ways of achieving side-by-side devices of both polarizations in the same monolithic substrate, shown in FIG. 3. First, with a long-cavity structure, where the (distributed) mirror loss becomes unimportant, the threshold current density is lowest and very little bandfilling occurs. In this case, the lowest threshold transition should oscillate. As the threshold current density is increased by including loss, however, the valence bands begin to fill, so that a higher gain transition can oscillate. Thus, while the TE-mode (heavy hole) or the TM-mode (light hole) may dominate for low-threshold current densities, the three possibilities shown in FIG. 3 all include some means of introducing loss into the cavity, to select the other polarization, which has a higher threshold carrier density but also higher gain.
For example, FIG. 3A shows a dual laser device 29 containing long 30 and short-cavity 31 lasers, which could be achieved on the same wafer by (chemically assisted) ion beam-etched facets. The short-cavity device on the right would have a higher threshold current density and oscillate in the higher-gain TM mode. The long cavity device on the left, having a lower threshold current, would oscillate in the lowest threshold TE mode. Alternatively, FIG. 3B shows a dual laser device 29' with an unpumped section 34 on the right laser 33 that can serve as an intracavity absorber, raising the threshold carrier density. If the device 33 on the right is separately contacted in section 34, this section 34 could be forward biased slightly below transparency, so that the losses remain low, lowering the threshold carrier density. Finally, FIG. 3C shows a dual laser device 35 with two pumped sections 36, one of which is pumped to its end while the other contains an unpumped end section 38. The end section 38 is lossy, producing a higher threshold current density in the left laser. These three examples demonstrate ways in which loss can be selectively introduced, to select the desired polarization from a single wafer with separate QWs for TE- and TM-mode gain.
FIG. 4A shows one form of device, in cross-section, embodying the invention. FIG. 4B is a top view corresponding to the FIG. 3 schematic showings. The device comprises a laser structure 40 capable of emitting two laser beams 41, 42 closely spaced to one another and different polarizations from adjacently constructed laser diodes 43,44 on the same substrate 45. In a practical use as a multi-beam light source, the different polarizations would be employed to minimize optical interference or as a light source in multiple station/multiple position printer as disclosed in concurrently filed application D/91293. The structure illustrated is described below with lower-case reference letters:
a: N-ohmic contact metal
b: b: N-type GaAs substrate
c: (Alx Ga1-x)0.5 In0.5 P (0.6<xclad <1.0) N-cladding layer (0.6-1.5 μm)
d: (Alx Ga1-x)0.5 In0.5 P (0.2<xSCH <0.6) lower confining layer (500-2000 Å)
e: Gaz In1-z P quantum well(s) for TE-mode gain
f: (Alx Ga1-x)0.5 In0.5 P (0.2<xBARRIER <0.6) barrier between quantum well(s) (20-200 Å)
g: Gaz In1-z P quantum well(s) for TM-mode gain
h: (Alx Ga1-x)0.5 In0.5 P (0.2<xSCH <0.6) upper confining layer (500-2000 Å)
i: (Alx Ga1-x)0.5 In0.5 P (0.6<xclad <1.0) P-cladding layer (0.1-0.3 μm)
j: Gaz In1-z P (0.5<zES <0.7) etch stop layer (20-100 Å)
k: (Alx Ga1-x)0.5 In0.5 P (0.6<xclad <1.0) or Aly Ga1-y As(y>0.8) P-cladding layer (0.6-1.5 μm)
l: (Alx Ga1-x)0.5 In0.5 P barrier reduction layer, graded or stepped
from x=xclad to x=0 (500-2000 Å)
m: GaAs P+ cap layer (500-5000 Å)
n: N-type GaAs burying layer; selectively regrown (0.2-2.0 μm)
o: P-ohmic contact metal
p: isolation groove between active and modulator sections
q: back-facet reflective coating
r: front-facet passivation coating
s: active section contact pad
t: modulator section contact pad
u: isolation groove to optically and electrically separate adjacent lasers
As a first approximation, the composition and thickness of the Gaz In1-z P Qws e and g are determined by the wavelength desired, from the curve in FIG. 2 (following a contour of constant wavelength). Examples are given below:
TABLE______________________________________Desired TE-mode-QW TM-mode QWwavelength ZTE LZ,TE ZTM LZ,TM______________________________________650 nm 0.51 100Å 0.53 250Å640 0.52 80 0.57 150630 0.54 60 0.58 80620 0.54 40 0.60 60______________________________________
The structure is adjusted so that one polarization has a lower threshold current, while the other polarization has a higher peak gain (at some elevated current density.)
The graph of FIG. 5 illustrates an example of the desired TE- and TM-mode gain-current relationship. Modal gain is plotted as a function of device current, for both the TM and TE modes. The lower dashed line 50 represents, for example, the threshold gain of the device 43 with modulator section t when it is operated to behave optically transparent. The upper dashed line 51 illustrates the case when the modulator section t is operated so it introduces optical loss. The arrow 52 indicates the threshold gain difference Δg. The vertical line 53 indicates the lower threshold current that will cause the left laser 43 to emit in the higher gain TE mode by activating layer e, and the vertical line 54 indicates the higher threshold current that will cause the right laser 44 to emit in the higher gain TM mode by activating layer g. The curves representing the gain v. current characteristics labelled, respectively, TE and TM show that their respective characteristics cross between the threshold currents represented by vertical lines 53 and 54. So, for this example, which is not intended to be limiting, the TE mode has a lower transparency current, while the TM mode has the greater gain. This, as one embodiment of the invention, is taken advantage of to control the polarization mode. This can be implemented as follows:
When the modulator section t is left unbiased, or when biased below the transparency current density, it is optically absorptive introducing loss. This condition raises the threshold gain, as shown at 51 in FIG. 5. The threshold gain (gth) is: ##EQU1## where αa =distributed loss in active laser cavity
Rf(r) =front (rear) facet reflectivities
Lm(a) =length of modulator (active laser) cavities
αm =modal absorption loss in modulator section
However, when the modulator section t is sufficiently forward biased to transparency (αm =0), the threshold gain is simply that for a laser without any modulator section shown at 50 in FIG. 5 (i.e., the last term disappears in the equation above). When biased even further to provide optical gain (αm <0), the threshold gain is further reduced. When the modulator is unbiased, reverse biased, or sub-transparency forward biased, it is lossy (Δm >0) and the threshold gain is increased. Thus, the modulator section t can be used to change the intracavity loss, and with the appropriate crossing gain-current-polarization characteristics it will also change the polarization.
The overall cavity's length, indicated by La in FIG. 4B, is chosen so that in one active layer the lower threshold mode (the TE-mode in FIG. 5) will oscillate when the modulator section is biased to transparency (if the cavity length La is too short, only the higher-gain mode will oscillate). The length Lm and bias of the modulator section t are chosen such that when its current is reduced below transparency, the threshold gain increases enough that the other active layer will oscillate with TM polarization (with higher peak gain).
While the preferred FIG. 4 embodiment shows two QWs, e and g, in each laser, it will be understood that the device of FIG. 4A can incorporate in each laser a single QW as previously described or more than two Qws.
It will be understood that FIG. 5 is only one example of the TE-TM-mode gain-current relationship. Other structures or compositions may exhibit variations of the FIG. 5 curves, though the underlying principles will be the same.
FIG. 6 illustrates circuitry for electronically controlling the polarization of the two diodes. The diodes are referenced s, the modulator sections are referenced t, as in FIG. 4. The lead connections to the substrate contact a, top contacts o and modulator sections t are designated 54', 55, 56, 57, and 58, respectively, in FIG. 4. Controllers 59 control the operation by determining when each diode 43, 44 will fire, simultaneously or alternatively, and the electronic signals to the modulator sections from the controllers 59 determine their biased states and therefore whether they behave optically transparent or optically absorbent.
FIG. 7 illustrates another embodiment of the invention, in a view from the top, with adjacent diodes 60,61, both of the same length of cavity La, but the diode 61 on the right with a contact-free area 62 serving as an unpumped section 63. Each laser operates in a fixed polarization, and the unpumped section 63 of the device 61 can serve to provide a loss which drives the device into the high-gain TM polarization mode. In this case, the cavity length, La is chosen so that the low threshold TE mode normally oscillates, as in the device 60 on the left. The adjacent (right-hand side) laser 61 contains the unpumped section along the cavity, which increases the threshold gain requirement to a level above where the TE- and TM-mode gain-current curves crossover (FIG. 5). Thus, only the polarization with the higher-modal gain will oscillate for this case of a lossy cavity. Because of bandfilling, the lasers when operated in the TE or TM modes may not have exactly the same wavelength.
FIG. 8 illustrates achieving dual mode polarization with active layers of different composition and thickness. The side-by-side QW lasers are indicated at 70, 71 in FIG. 9. The compositions of the confining structure 72..74 are stated in the figure. In this instance, both the active layers in the left diode 70 and in the right diode 71 contain both a 40 Å thick QW 76 whose composition is Ga0.4 In0.6 P, for TE-mode gain, and an 80 Å thick QW 77 whose composition is Ga0.6 In0.4 P for TM-mode gain. The left diode 70 would be made to oscillate in the TE mode whereas the right diode would be made to oscillate in the TM mode, all other factors being the same for both diodes. The table lists in the second-fifth columns other examples of composition and thickness to obtain TE or TM polarization at a particular wavelength. In these examples, each active layer would contain at least two QWs. The different modes are obtained as described in connection with FIG. 3 with, for example, different cavity lengths or a loss modulator. If the thickness and composition of the Qws were the same, falling on the curve 25 of FIG. 2, then the different modes can be obtained as described in connection with FIGS. 7 and 10, for example, by varying the threshold current, intracavity losses, temperature, or reflectivity. As still a further alternative, a QW for the left laser can be compressively-strained to operate in the TE mode, and a QW for the right laser can be tensile-strained to operate in the TM mode, so that when both lasers are activated, adjacent, orthogonally-polarized beams are produced.
As earlier mentioned, there may be applications in which it would be desirable not only that orthogonally-polarized beams are generated from the same monolithic structure, but also that the emitting diodes have similar threshold currents, so that they can be activated from the same electrical source. This can be achieved by a judicious choice of compositions and geometries, using the graph of FIG. 5. FIG. 5 illustrates that TE and TM mode operation can be achieved with the same threshold current by varying biasing currents and/or as indicated in FIG. 10 by varying temperature or facet reflectivity. Some experimentation may be necessary to achieve the right combination of parameters.
It will be clearly understood that the invention is not limited to the examples given, which illustrate various ways to construct QW laser diodes whose polarization mode is controllable electronically or physically, so that multiple such diodes can be mounted side-by-side to generate TE and TM mode emissions. Nor, as will be evident is the invention limited to the specific geometry or compositions of the examples given. The references cited in the Appendix provide many more examples of compositions and geometries suitable for use in the invention as will be evident to those skilled in this art. For example, the thickness and composition of the QWs are most important in determining the gain-current characteristic in each polarization. Other structure parameters, however, can also be adjusted to give the desired gain-current-polarization characteristics. For instance, the peak gain in a particular polarization can be increased by using multiples of the appropriate QW, instead of just a single QW for each polarization, as shown above. Similarly, the modal gain available from one QW can be increased over that available from the other by its placement within the separate confinement heterostructure as described in copending application Ser. No. 07/779,207, filed Oct. 18, 1991. In this case, a QW centered in the guide leads to greater modal gain compared to the modal gain from a QW which is off-axis. Since the TE-mode QW is thinnest, its transparency current can be made lower by making it as thin as possible. This also reduces its modal gain, leading to the characteristic shown above in FIG. 5.
While a preferred embodiment of the invention embodies a semiconductor material with separate QWs in one or plural diodes, with one or the other QW activated to generate a radiation beam with the desired TE or TM mode gain, it will be understood as explained above that one or both diodes can have a semiconductor material with a single QW whose composition and thickness causes it to fall on the curve 25 of FIG. 2. The desired TE or TM mode is then activated by threshold current selection as per FIG. 5, or by the biasing schemes described here and in the related case, Ser. No. 07/948,522.
FIG. 10 shows an embodiment of the invention which in a common substrate are built two side-by-side diode laser structures, electrically isolated from each other. Stripe contacts 76, 77 are shown on top. The contact at the bottom is not shown. The active laser region is indicated by the dotted line 78, and thus the left laser 91 will emit from the region 80 in the forward direction indicated by arrow 82, whereas the right laser 92 will emit from the region 81 in the direction 83, through slightly transparent front reflectors 84, 84'. The back reflectors are fully reflective. Deposited heater elements 85, 86 are provided on each laser, and their current is controlled by a temperature controller 88.
Providing temporary surges or pulses of current selectively to the heaters 85, 86 should enable the temperature of the underlying laser to be selectively controlled during operation. A higher temperature alters the TE and TM modal gain-current relation, and requires a higher threshold current which could produce the TM mode.
FIG. 10 also illustrates that the reflectivity of the front reflectors 84, 84' can also be controlled to produce the different polarization modes. If the reflectivity R1 at the front facet is high, the laser 91 has a low threshold and will operate in the TE mode. If the reflectivity R2 is lower than R1, then the laser 92 has a higher threshold and higher gain mode and will operate in the TM mode. The way to control facet reflectivity is described in detail in reference [9].
Material preparation, and diode fabrication are described in detail in references [10] and [11]. For completeness' sake, as an example, a preferred way of making the FIG. 4 embodiment is given below:
The multiple laser structure shown in FIG. 4 can be fabricated as follows. Layers c through m are epitaxially grown uniformly across substrate b by a technique such as metalorganic chemical vapor deposition (MOCVD) as is well known in the art. Pairs of mesas are then formed by masking pairs of stripes with a material such as Si3 N4 before etching through layers k, l, and m down to etch stop layer j. These mesas are typically spaced by 10 to 25 μm but can be farther apart if desired. With the mask remaining on the top of the mesas, the etched wafer is again inserted in the MOCVD reactor and layer n is selectively regrown everywhere except on the top of the mesas, as is well known in the art. After regrowth of layer n the striped masks on top of the mesas are removed and a liftoff mask consisting of a stripe placed between each pair of overgrown. mesas 43, 44 is deposited. After metallic layer o is deposited over the entire wafer, the liftoff stripes are etched away leaving individually addressable contacts separated by an open, unmetallized area between each pair of overgrown mesas. This unmetalized area can be from 2 to 10 μm wide.
After the independently addressable contacts are defined for lasers 43 and 44, an isolation groove u is added to the structure in order to optically, electrically and thermally isolate the closely spaced lasers. Without the groove, the two stripe contacts would be electrically connected via the regrown GaAs, causing severe electrical crosstalk. Furthermore, diffusion of carriers in the active region contributes to electrical crosstalk between stripes, while optical crosstalk arises from light leaking laterally between adjacent devices. The isolation groove u effectively eliminates these crosstalk mechanisms, so long as it extends through the laser active region. To thermally isolate the closely spaced lasers, the isolation groove must extend into the substrate.
While U.S. Pat. No. 4,069,463 describes an isolation system, the way in which the groove u is made, as described below, is novel and a feature of the invention of the present case. Moreover, the isolation technique of the present invention is for a semiconductor structure have adjacent laser structures generating differently polarized radiation beams, in one embodiment of which the structures are sensitive to ambient temperature.
The isolation groove is formed by etching the semiconductor layers in the unmetalized area between the mesas. Groove u is formed by using a two step etching process. First a GaAs enchant such as 5H2 SO4 :1H2 O2 :1H2 O at 30� C. is used to etch a 2 to 10 μm wide stripe through layer n. This step is followed by a second etch using a non-GaAs etchant such as concentrated HCl,HBr, or hot (70�-90� C.) H2 SO4 to etch through layers j through c. In this case, the GaAs is not etched, and so serves as an etch mask for making the trench. For most complete isolation, the groove can be etched into the substrate b and may therefore be 3 to 4 μm deep. It is understood that this is a preferred way of making the FIG. 4 structure, the invention is not limited to this way, and other processes can also be used as will be evident to those skilled in this art.
While the invention has been described and illustrated in connection with preferred embodiments, many variations and modifications as will be evident to those skilled in this art may be made therein without departing from the spirit of the invention, and the invention as set forth in the appended claims is thus not to be limited to the precise details of construction set forth above as such variations and modifications are intended to be included within the scope of the appended claims.
[1.] S. R. Chinn, P. S. Zory, and A. R. Reisinger, IEEE Jour Quantum Electronics 24, 2191-2214 (1988).
[2.] P. J. A. Thijs, L. F. Theimeijer, P. I. Kuindersma, J. J. M. Binsma, and T. van Dongen, IEEE Jour, Quantum Electronics 27, 1426-1439 (1991).
[3.] L. F. Teimeijer, P. J. A. Thijs, P. J. de Waard, J. J. M. Binsma, and T. van Dongen, Appl. Phys. Lett. 58, 2738-2740 (1991).
[4.] M. J. B. Boermans, S. H. Hagen, A. Valster, Mn. N. Finke, and J. M. M. van der Heyden, Electronics Lett. 26, 1438-1439 (1990).
[5.] D. F. Welch, T. Wang, and D. R. Scifres, Electronics Lett. 27, 693-695 (1991).
[6.] M. Kondo, K. Domen, C. Anayama, T. Tanahashi, and K. Nakajima, Jour. Crystal Growth 107, 578-582 (1991).
[7.] S. H. Pan, H. Shen, Z. Hang, F. H. Pollak, W. Zhuang, Q. Xu, A. P. Roth, R. A. Masut, C. Lacelle, and D. Morris, Phys. Rev. B-38, 3375-3382 (1988).
[8.] S. W. Carzine and L. A. Caldren, Appl. Phys. Lett., 59, 558-590 (1991).
[9.] M. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers Part A: Fundamental Principles, Academic Press Orlando, Fla. (1978) pages 79-82.
[10.] "GainAsP Alloy Semiconductors", T. P. Pearsall, ed. John Urley & Sons, NY (1982) pages 61-106.
[11.] M. C. Casey, Jr. & M. B. Panish, "Heterostructure Lasers Part B: Materials & Operating Characteristics", Academic Press, Orlando, Fla. (1978) pages 132-148.
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|Multi-point emission type semiconductor laser device therefor
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|D. F. Welch, T. Wang, and D. R. Scifres, Electronics Lett. 27, 693 695 91991). Apr.
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|GaInAsP Alloy Semiconductors , T. P. Pearsall, ed. John Wirley & Sons, N.Y. (1982) pp. 61 106. No Month Available.
|H. C. Casey, Jr. & M. B. Panish, "Heterostructure Lasers Part B: Materials & Operating Characteristics", Academic Press, Orlando, Fla. (1978) pp. 132-148. No Month Available.
|H. C. Casey, Jr. & M. B. Panish, Heterostructure Lasers Part B: Materials & Operating Characteristics , Academic Press, Orlando, Fla. (1978) pp. 132 148. No Month Available.
|H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers Part A: Fundamental Principles, Academic Press Orlando, Fla. (1978) pp. 79 82. No Month Available.
|H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers Part A: Fundamental Principles, Academic Press Orlando, Fla. (1978) pp. 79-82. No Month Available.
|L. F. Teimeijer, P. J. A. Thijs, P. J. de Waard, J. J. M. Binsma, and T. van Dongen, Appl. Phys. Lett. 58, 2738 2740 (1991). June.
|L. F. Teimeijer, P. J. A. Thijs, P. J. de Waard, J. J. M. Binsma, and T. van Dongen, Appl. Phys. Lett. 58, 2738-2740 (1991). June.
|M. J. B. Boermans, S. H. Hagen, A. Valster, Mn. N. Finke, and J. M. M. van der Heyden, Electronics Lett. 26, 1438 1439 (1990). Aug.
|M. J. B. Boermans, S. H. Hagen, A. Valster, Mn. N. Finke, and J. M. M. van der Heyden, Electronics Lett. 26, 1438-1439 (1990). Aug.
|M. Kondo, K. Domen, C. Anayama, T. Tanahashi, and K. Nakajima, Jour. Crystal Growth 107, 578 582 (1991). No Month Available.
|M. Kondo, K. Domen, C. Anayama, T. Tanahashi, and K. Nakajima, Jour. Crystal Growth 107, 578-582 (1991). No Month Available.
|P. J. A. Thijs, L. F. Theimeijer, P. I. Kuindersma, J. J. M. Binsma, and T. van Dongen, IEEE Jour, Quantum Electronics 27, 1426 1439 (1991). Jun. 6.
|P. J. A. Thijs, L. F. Theimeijer, P. I. Kuindersma, J. J. M. Binsma, and T. van Dongen, IEEE Jour, Quantum Electronics 27, 1426-1439 (1991). Jun. 6.
|S. H. Pan, H. Shen, Z. Hang, F. H. Pollak, W. Zhuang, Q. Xu, A. P. Roth, R. A. Masut, C. Lacelle, and D. Morris, Phys. Rev. B 38, 3375 3382 (1988). Aug.
|S. H. Pan, H. Shen, Z. Hang, F. H. Pollak, W. Zhuang, Q. Xu, A. P. Roth, R. A. Masut, C. Lacelle, and D. Morris, Phys. Rev. B-38, 3375-3382 (1988). Aug.
|S. R. Chinn, P. S. Zory, and A. R. Resinger, IEEE Jour Quantum Electronics 24, 2191 2214. No. 11 Nov. 1988.
|S. R. Chinn, P. S. Zory, and A. R. Resinger, IEEE Jour Quantum Electronics 24, 2191-2214. No. 11 Nov. 1988.
|S. W. Corzine and L. A. Caldren, Appl. Phys. Lett., 59, 588 590 (1991). Jul.
|S. W. Corzine and L. A. Caldren, Appl. Phys. Lett., 59, 588-590 (1991). Jul.
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|Feb 17, 2004
|Dec 30, 2004
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|Jul 17, 2003
|Jan 20, 2005
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|Jul 16, 2003
|Jan 20, 2005
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|Coupler having reduction of reflections to light source
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|Jan 20, 2005
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|Jan 29, 2004
|Feb 10, 2005
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|Sep 23, 2004
|Feb 17, 2005
|Honeywell To Finisar
|Tunable detector
|Oct 29, 2003
|May 5, 2005
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|Apr 29, 2005
|Sep 1, 2005
|Johnson Ralph H.
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|Feb 9, 2005
|Sep 15, 2005
|Cox James A.
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|Mar 28, 2005
|Mar 2, 2006
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|Jul 2, 2003
|Mar 16, 2006
|Honeywell International Inc.
|Lens optical coupler
|Oct 27, 2004
|Apr 27, 2006
|Daniel Perreault
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|Dec 16, 2008
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|Dec 20, 1996
|Jul 2, 1997
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|U.S. Classification
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|International Classification
|Cooperative Classification
|European Classification
|Sep 22, 1992
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Sylvia by Nicole Hollander
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I could use this service.
I useta do just that for the California tax folks when I'd ship inventory to Nevada before their visit.
This is my situation. How do I call the Sylvia Squad?
By the way, do you have to bring it backi>
Sadly the Sylvia Squad is still digging out from under Ms. Hollander's old comic collection and is no longer available.
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Hilde's Residence - Guest House - Gura Humorului
Hilde's Residence - Guest House is a 4-star Bed&Breakfast located within a 5-minutes walk from the town center of Gura Humorului in Northern Romania, the perfect destination for discovering the traditions of Bukovina during a holiday in Romania.
The B&B features a restaurant for up to 50 people serving traditional local food, a bar, a garden with fruit trees, a children's play area, free parking, and free WiFi throughout.
Sites of interest and activities to discover in the area include the beautiful mountain town of Gura Humorului, the various monasteries, and Cacica Salt Mine. Winter skiing is also available nearby. The property staff will provide you with all the information you may require during your stay in the Suceava province.
Hilde's Residence - Guest House - Gura Humorului
Hotel Info: 1-877-214-4288from $47
- Superior Double Room
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At a glance
Key facts
Hotel size
- This hotel has 14 rooms
- This hotel is arranged over 2 floors
- Check-in time 2 PM-10 PM
- Check-out time is noon
If you are planning to arrive after 9:30 PM please contact the property in advance using the information on the booking confirmation.
24-hour airport shuttle service is available. Contact the property in advance to get details.
Required at check in
- Credit card or cash deposit required
- Government-issued photo ID required
Travelling with others
- One child (2 years old and younger) stays free when occupying the parent or guardian's room, using existing bedding
- Pets not allowed
- Free WiFi in public areas
- Free WiFi in rooms
- Airport shuttle (available 24 hours) *
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- Free self parking
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- Smoke-free property
In the hotel
- Buffet breakfast daily (surcharge)
- Restaurant
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- Coffee/tea in a common area
- Bicycle rentals on site
- Hiking/biking trails nearby
- Ski lessons available nearby
- Ski equipment rental shops nearby
- Downhill skiing nearby
- Front desk (limited hours)
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- Laundry facilities
- Multilingual staff
- Number of buildings/towers - 3
- Garden
- Picnic area
- Terrace
In the room
- Minibar
- Slippers
- Washer/dryer
- Pillow menu
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- Individually decorated
- Individually furnished
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- Hilde's Residence Guest House B&B Gura Humorului
- Hilde's Residence Guest House Gura Humorului
Only registered guests are allowed in the guestrooms.
For transfers, guests must contact the property 72 hours prior to arrival at the number on the booking confirmation.
Optional extras
Rollaway beds are available for EUR 10 per night
Buffet breakfast is offered for an extra charge of EUR 6 per person (approximately)
Airport shuttle service is offered for an extra charge
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.


text:
A message from Dr. Stych:
Traverse City's Family Podiatrist
I value the individuality and diversity of my patients, and enjoy the opportunity of getting to know each and every one. I have a wealth of experience working with a variety of patient populations, including children, adults, seniors, people with acute foot issues, and those managing chronic diseases. The therapeutic goal for my patient is always foot comfort. My more personal goal is to help my patient maintain the best possible quality of life.
I am highly qualified to treat all foot and ankle disorders and particularly enjoy treating bunion deformities, complex diabetic foot conditions, Achilles tendon disorders, lower extremity skin & nail problems, flatfoot, and pediatric foot conditions.
Thank you for coming to us and allowing us to help you!
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November is Diabetes Awareness Month. Diabetes is a disease affecting many parts of the body. While there is no cure for diabetes, there is hope. With proper diet, exercise, medical care, and careful management at home, a person with diabetes can enjoy a full and active life. Of the more than 28 million people in […]
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August 23, 2015
Most teenagers recognize the importance of regularly caring for their teeth, skin, eyes, and bodies (exercise), but few know to care for their feet. Yet, foot health plays an important role in their overall health and wellness. Teens should be aware that foot pain of any kind is not normal. Whether they are dealing with […]


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With Instructables you can share what you make with the world, and tap into an ever-growing community of creative experts.
Hello Steampunkers, dear friends This time I explain you how to build in some easy steps a unique Steampunk Radio with a glowing "Vacuum Tube" on the top. All ...
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On the top of the radio I created a simple Steampunk engineering with a normal light bulb as a mimic vacuum tube. The following parts I used: an ...
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Quinta guimaraes - Propriété (appartement, maison ou ferme) pour acheter ou louer
Quinta - North of Portugal
Ferme / Ranch / Plantation, Braga
Excellent quinta, located in the city of Braga, with a house with original architecture, a magnificent lounge and ample green lawns with varied trees.
The property is over 200 meters facing the main street.
In addition to the century-old house, this property has a spectacular lounge with high capacity, built from scratch with all the necessary infrastructure and modern architectural lines combined with ancient traits.
It also has an outdoor lounge area and a specific area for the enjoyment of children.
This unique property can have several purposes of which are: hotel construction; rental accommodation; Tourism habitation; Events Quinta; Social Club (upscale); Housing construction (space is developable high density) and private property.
It has a prime location and is served by excellent accessibility (A3 / A11) is 20 minutes away from the city of Guimarães and 30 minutes distance from Francisco Sá Carneiro Airport.
- 10 000,00m2
- Référence: CS01467
Villa - North of Portugal
Ferme / Ranch / Plantation T4, Guimarães, Tabuadelo
Fantastic property in the birthplace of Portugal, with project for Ecotourism.
Located in the municipality of Guimarães, European Capital of Culture in 2012.
With tourist project to harness the heritage resources.
Through the property, runs a water line that comes from the east of Mount St. Bento.
Located in a quiet and typical rural location in the North of Portugal.
The town center benefits from a variety of shops, coffees, bars, museums and restaurants.
In the historic city of Braga, located 23 minutes away, there is the possibility to walk downtown and visit the famous cathedral.
The scenic Penha Mountain and its ski lift are located 6 km.
It is located 15 minutes from the center of Guimarães and 35 minutes from the International Airport Francisco Sá Carneiro.
- 11 921,00m2
- Référence: CS00087
- 4
- 2
Quinta - North of Portugal
Ferme / Ranch / Plantation, Guimarães, Salvador (Briteiros)
Beautiful Quinta with 14 ha area between agricultural and forest plantation.
Farmhouse all recovered with the brilliant stroke of the famous "Architect Fernando Távora."
Building of 2 floors with 5 bedrooms, living rooms, gardens and terraces with the conservation of its original design lends itself to this house a refined, comfortable and glamorous environment in a bucolic and relaxing framework.
Excellent as a holiday home, permanent residence or for tourist exploitation.
Outdoor pool with support house with living room and open plan kitchen, bathroom and bathhouse.
It features homemade house that takes care of all the property that remains in excellent condition.
Great location, a 10 minutes distance from the city of Guimarães, a very private situation and 40 minutes away from Francisco Sá Carneiro Internatonal Airport.
- 141 690,00m2
- Référence: CS01367
- 5
- 6
Quinta - North of Portugal
Ferme / Ranch / Plantation T5, Guimarães, Aldão
Beautiful house of the 50`s.
Manor House in excellent condition, set in a property with about 5.5 acres very well treated and with various supports, caretaker`s house and cold greenhouse.
Exquisite interiors and beautiful architecture of the time make this house a rich piece, unique and of rare beauty.
Peculiar property, luxurious, exquisite and glamorous.
A special piece for a very special person.
Prime location with stunning views of the hill and all over the fields, in a idyllic and bucolic environment, 3 minutes away from the center of Guimarães.
Excellent access, close to the highway node and 40 minutes distance from Francisco Sá Carneiro International Airport.
- 55 891,00m2
- Référence: CS01385
- 5
- 3


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Masseria Incantalupi - Brindisi
Along with free buffet breakfast, this farm house offers a restaurant and free self parking. Go for a dip in the outdoor pool and enjoy the sun loungers. There is also a poolside bar and a bar/lounge so guests can sip a refreshing drink by the pool or indoors. A Turkish bath/hammam, a spa tub, a sauna and spa services are among the leisure facilities on offer.
Multilingual staff can provide tour/ticket assistance. Free WiFi is provided.
Masseria Incantalupi - Brindisi
Hotel Info: 1-877-214-4288from $140
- Suite
- Junior Suite Single Occupancy stay 3 nights get 1 free access to welness
- Deluxe Suite
- Suite Single Occupancy stay 3 nights get 1 free access to welness
- Family Suite
- Junior Suite Single Occupancy
- Suite Single Occupancy
- Junior Suite
- Junior Suite
- Double Suite
Also popular with travelers from the USA
At a glance
Key facts
Hotel size
- This hotel has 10 rooms
- This hotel is arranged over 1 floor
- Check-in time 4:00 PM-10:00 PM
- Check-out time is 11:00 AM
Airport shuttle service is available on request. Contact the property in advance to make arrangements.
Required at check in
- Credit card or cash deposit required
- Government-issued photo ID required
Travelling with others
- Babysitting/childcare *
- Pets allowed (dogs only)
- Free WiFi in public areas
- Free WiFi in rooms
- Airport shuttle (available on request) *
- Free train station pickup
- Free self parking
In the hotel
- Free buffet breakfast daily
- Restaurant
- Bar/lounge
- Poolside bar
- Room service (during limited hours)
- Outdoor pool
- Pool sun loungers
- Spa services on site
- Spa tub
- Bicycle rentals nearby
- Mountain biking nearby
- Sauna
- Conference space
- Front desk (limited hours)
- Tours/ticket assistance
- Dry cleaning/laundry service
- Laundry facilities
- Multilingual staff
- Number of buildings/towers - 1
- Garden
In the room
- In-room climate control (air conditioning)
- Air conditioning
- Minibar
- Iron/ironing board (on request)
- In-room massage available
- Hair dryer
- Cable/satellite TV channels
- Desk
- Free newspaper
- Free WiFi
- Phone
- In-room safe
Masseria Incantalupi - Brindisi's small print
Also known as
- Masseria Incantalupi
- Masseria Incantalupi Agritourism
- Masseria Incantalupi Agritourism Brindisi
- Masseria Incantalupi Brindisi
All guests, including children, must be present at check-in and show their government-issued photo ID card or passport.
Cash transactions at this property cannot exceed EUR 2999.99, due to national regulations. For further details, please contact the property using information in the booking confirmation.
For transfers, guests must contact the property 72 hours prior to arrival at the number on the booking confirmation.
Reservations are required for massage services and spa treatments and can be made by contacting the property before arrival at the number on the booking confirmation.
Optional extras
Babysitting/childcare is available for an extra charge
Airport shuttle service is offered for an extra charge of EUR 20
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.


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The following is from SPEED TV….
As the ink dries on a new multi-year Bike Week deal with Daytona International Speedway, SPEED readies for its 10th consecutive year of coverage from the annual festival of two-wheel hustle and performance.
The popular SPEED broadcast team of Ralph Sheheen, Motorcycle Hall-of-Famer Jeff Emig and pit reporter Erin Bates opens Bike Week on March 5 at 8 p.m. ET, calling the AMA Supercross action from the unique grass and dirt Daytona layout, designed by legendary racer Ricky Carmichael.
"Ricky has designed a great track," said Emig, whose racing career included 37 AMA national event wins." Having the starting line in the center of the track, going away from the grandstands, should give the fans an incredible sensation of the sound and smell of AMA Supercross … RC has put together a challenging combination of jumps, whoop-de-doos and corners that looks to be one that should give us yet another legendary Daytona Supercross event."
SPEED brings back its signature "SPEED Cam," a dedicated hand-held camera riding at race speed on the famed Daytona International Speedway tri-oval apron, following Supercross riders as they maneuver through vicious stutter bumps known as "whoops."
The following weekend, host Leigh Diffey is joined by "Mr. Daytona" Scott Russell and pit reporters Greg White and Jason Pridmore as SPEED delivers live coverage of The Daytona 200 (March 12, 1 p.m. ET, LIVE), an event that began in 1937 as a beach race.
Russell dominated Daytona in the 1990s with Daytona 200 victories in 1992, '94, '95, '97 and '98, and was inducted into the Motorcycle Hall of Fame in 2005.
SPEED also is providing coverage of the AMA National Guard Superbike race and AMA Pro Flat Track Grand National Championship events.
Bike Week on SPEED television schedule:
AMA Supercross (March 5, 8 p.m. ET, LIVE)
The Daytona 200 (March 12, 1 p.m. ET, LIVE)
AMA Pro National Guard SuperBike (March 12, 11 p.m. ET, SDD)
AMA Pro Flat Track Grand National Championship (March 13, 3 p.m. ET)
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text:
American Flag, 1990
Etching and aquatint on Velin de Creysse paper
Image size: 14'' x 22 1/2''
Paper size: 22 1/4'' x 30''
Edition of 99
Printed by Stephane Lalou, France
Published by The Metropolitan Museum of Art
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2 TUFUGAs.
WikiTree is a community of genealogists growing The Free Family Tree. This is our current TUFUGA index. If you agree with our 9-Point Honor Code we'd love your help filling in the blanks and fixing mistakes.
Sponsored by MyHeritage
|Edit Date
|Sunema Tupua Tufuga
|Michael Dunn
|24 Jul 2015
|Pepe Tufuga
|Pepe Tufuga
|2 Sep 2009


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If you are a UK or EU student studying at undergraduate level for the first time, you can apply for funding from the UK Government.
If you are a UK or EU student studying at undergraduate level for the first time, you can apply for funding from the UK Government.
Students resident in England – 2016 entry
From 1 September 2016, the student finance package will include a tuition fee loan and a maintenance loan. You may have access to extra help in certain circumstances, for example, if you have children or if you have a disability.
If you are a UK resident, studying for an undergraduate degree for the first time, you should apply to the student finance body where you are normally resident when you first apply, to find out whether you qualify for government funding.
• England or an EU country - Student Finance England
• Northern Ireland - Student Finance Northern Ireland
• Scotland - Student Awards Agency for Scotland
• Wales - Student Finance Wales
Students resident in the EU – 2016 entry
If you are a (non-UK) EU student you should apply to the UK government via the Student Finance Services non-UK team to determine your eligibility for a tuition fee loan.
If you are an EEA migrant worker who has been granted Home status you may be eligible to apply for the same maintenance loan as UK students.
• Student Finance
• How to apply
• Contact the Student Finance Services Non-UK team
City College Higher Education Bursary
This bursary is for full-time first year undergraduate students who are normally resident in England or the EU and starting their studies in 2016. Students who satisfy the following criteria will be eligible to receive a cash bursary subject to terms and conditions:
Household income £0-£25,000 - £1000 cash in two instalments
Household income £25,000-£42,600 - £500 cash in two instalments
Students entering their programme with an advanced apprenticeship or a Level 3 national vocational qualification - £1000 cash in two instalments
All recipients of this bursary must have been assessed as being eligible to receive full funding from Student Finance England.
You will not need to make an application to be considered for this bursary. We use the information you have provided to UCAS and Student Finance England to assess your eligibility.
Please make sure that you:
• Apply for your student loans as soon as possible.
• Apply for means-tested support and agree to Student Finance England sharing the information you (or your parent/guardian). provide about household income (we need this information to assess your eligibility and we can only see it if your permission has been given).
• Contact Student Finance England if you are not sure whether you have given this permission.
• EU students should complete an EU Higher Education bursary application form when you apply to Student Finance England. This will be used to assess your household income and eligibility for this bursary.
We will generally email you in the autumn term of the year you start your course to confirm whether you will receive this bursary.
City College Hardship Fund
If you get into financial difficulty, or find yourself unable to cover costs while completing your course, you may be eligible for financial help from our Hardship Fund. Further information will be available to you from the HE Academic Office whilst you are on your studies.
Other Sources of Funding:
Widening Participation
City College is committed to widening participation, ensuring that students from disadvantaged backgrounds can access higher education, get the support they need to succeed in their studies and progress to further study and highly skilled employment. To further this, there will be a number of strategies in place to support students with the following backgrounds:-
• Students coming from areas classified as having low participation rates in higher education.
• Students in receipt of DSA or who may be academically challenged by periods of ill health.
• Care leavers.
Council Tax Certificates
We can provide all full-time students with a Council Tax Certificate which may exempt you from paying local council taxes. Your local council will be able to tell you whether you can claim the exemption.
The information above is accurate at the time of going to publication but may be subject to change during the academic year.


text:
Bondades y Manejo Básico del Palto
En los últimos años un nuevo concepto de manejo cultural del palto, está generando un fuerte giro tecnológico, que a su vez demanda un nivel de exigencia para el productor, tanto en inversión como a nivel de capacitación para maximizar sus niveles productivos; siendo la variedad solicitada en el mercado actual la variedad Hass por sus propiedades de agradable sabor y cáscara gruesa que le da la condición de fácil exportación permitiendo resistir mejor el transporte y manejo de post cosecha.
CBI Product Factsheet: Avocado in Germany
Exporters from developing countries (DCs) can profit from the growing German imports of fresh avocados. Good opportunities exist for ready-to-eat avocados. Additionally, DC exporters can differentiate themselves on the market with organic certification.
Product Factsheet Tropical Fruit in Finland
Phyto Planet Food and Health Ingredients
Phyto Planet is one of the leaders in wholesale distribution and exportation of herbs, teas, fruits and vegetables extracts, coffees and spices from Brazil.
Phyto Planet Food & Health Ingredients
Phyto Planet is one of the leaders in wholesale distribution and exportation of herbs, teas, fruits and vegetables extracts, coffees and spices from Brazil.
Wamu Investments
Wamu Investments is an indigenous private company founded in 1989 that produces and exports fresh fruits and vegetables to Europe and the Middle East. It is registered by the Horticultural Crop Development Authority of Kenya and is a member of the Fresh Produce Association of Kenya among others.
The company gets its produce from its own five farms located in different regions of the country at different altitudes. This ensures that we are able to grow different products all year around.
Woni Exporters Ltd.
From humble beginnings in 1987, Woni is a family-based business that has been recognized today as one of the most admired exporters of fruits and vegetables from Africa that meet international quality standards. Our reach is truly global as we supply the best quality products across Africa, Western Europe and the Middle East. Thanks to Woni's well established name, the organization is poised to expand its horizons by exporting products to other regions and continents that seek only the best in horticultural products.
Fisiología post cosecha de frutas
Compendio de características de calidad, condiciones de almacenamiento, sensibilidad al frío, maduración y desórdenes fisiológicos
Effects of seven different mycorrhizal inoculum in Persea americana in sterile and non-sterile soil
Estudio de Mercado Paltas en RP China