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15 Years
Since We Started
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Teachers in Network
I have been teaching cello lessons, both privately and in schools, since 2003. I have taught students of all levels, ages 4-80. I have an education from various aspects of music, with a BA in musicology from Yale, a MM in cello performance from the Mannes College of Music, and cello performance studies at the SUNY Purchase Conservatory of Music. I maintain an active performing schedule in the New York area, where I play with a trio, a string quartet, and various other ensembles. I have been on the teaching faculties of the Mannes College of Music, the Brooklyn Conservatory of Music, Creative Music and Art (Monroe, CT), and the Amadeus Conservatory of Music (Chappaqua).
Mike started playing and became obsessed with the cello at age 16. He would fuse this new-found obsession with the passion he had developed years earlier for heavy metal music. This has defined the unorthodox style he's developed. His music fuses his classical training with his love of heavy metal, fantasy, film & folk music. Building layers of cello on top of each other, he creates a world simultaneously dark, beautiful, wonderful, fantastic & breathtaking.
I am a performer, and also a music historian. I try to teach my students the aspects of performing, and technique, as well as the history and culture of the music they will learn.
I am a recent graduate of the Monclair State University Music Education Master's program. I also graduated from William Paterson University with a Bachelor of Music in Music Education. My primary instrument is the violin. My main secondary instrument is the piano. I currently perform with the Adelphi Orchestra. I have taught in the New Jersey public school system. I have been teaching private piano and violin lessons for about 6 years.
I am a fun and easy-going instructor and I love working with people. In 2015, I graduated from SUNY Fredonia with a Bachelor of Music degree in Viola Performances. Asides from viola, I also play piano and drums at local churches.
15 Years
Since We Started
Happy Customers
Cities with Students
Teachers in Network
Once you've met with your teacher for your risk free trial lesson, continuing with Musika is easy! If you are satisfied with your lesson, all you have to do is register with us to continue! The trial will count as your first lesson if you continue, however, with our Great Match Guarantee™ if for any reason you decide not to continue then the trial is FREE. Go ahead give it a try, you really have nothing to lose.
Don't just take our word for it. We hold the highest possible A+ rating from the nations foremost online reliability source: The BBB. We are proud of this rating and value the message it carries. The BBB has affirmed Musika as a reliable, trustworthy, safe business to work with, and we have the customer feedback to support this. We are continually working to make sure that Musika is a business you can trust.
Background checks available on instructors. Instructor can opt to have a background check on file. You can request to only be connected with teachers that have a check. The choice is yours.
We recommend children begin cello around age 7 or 8. With the cello being a larger member of the string family, it is important that the child is comfortable with the size of the instrument. The knowledgeable teachers in our network can help you choose the correct size. As beginning students, children are introduced to the technical aspects of playing, musicianship, and how to read and understand music.
Musika works with students of all ages. We teach adults at any skill level, whether it be beginner or advanced. The teachers in our network will make a specific lesson plan to help adult students progress in their studies, and aid them in any specific goals they have. While many people think of children when beginning music lessons, our adult students have had great success in increasing their musical abilities!
Every student is different, and each lesson will be different. There is no particular teaching style we mandate, but if you are looking for a particular method, such as Suzuki, we would be happy to find a teacher in our network that specializes in that. During lessons you will learn to read music, play with proper technique, and advance your music skills. Some teachers may have students buy particular method books. These materials are inexpensive and will be used for teaching and practicing.
Most beginners start out with a cello rental, which includes the cello, bow, and case. A high-quality rental will usually cost around $20 to $40 a month. If you are considering buying a cello, student instruments begin at around $500. The instructors in our network can provide recommendations and insight to help you choose the right instrument for your needs. When buying or renting a cello for a young child, make sure they are present to ensure the instrument purchased is the correct size for their height and age.
In-home lessons are the most popular choice with Musika students. It allows both beginning and advance students to study their instrument even with very busy schedules. You will not spend time or money on traveling and will have the same quality of lessons with our qualified instructors. Children and adults both love the idea of in-home lessons as it allows learning to occur in the comforts of home.
Review by Stevengournay
There are only a handful of people I count in my life who were great teachers, and Laura is one of them. Her musicianship is so secure as are her technique and personality that she zeros in on my weaknesses and devises exercises to strengthen them, and during the lesson it is not "Do this, no, do that" which is unnerving to a novice. She understands the most important part of study is relaxation, so that is easy to achieve with such a confident and compassionate human. Music is her life and she is eager to share her talent with everyone. A rare find, indeed!
Review by Mythili Lahiri
My son is truly enjoying his lessons with Chris. He looks forward to them and is motivated to practice. Chris is conscientious and shows up on time and whenever he is supposed to. He communicates clearly if rescheduling is ever required and is accommodating when we need to change the day. I would recommend Chris to anyone.
Review by Jaima Woodiwiss
Having taken 6 years of piano lessons myself when I was young, I am very happy with Osmond teaching my daughter. He is very personable and helping her to enjoy piano. My daughter loves the fun songs she gets to play and I really appreciate how he is integrating even in the first month fingering, chords, beats, and hearing the music. She's getting a very well rounded training and she's loving it!
Review by Jon
Michael is exactly what I was looking for in a teacher. The first thing he did was to determine what I wanted to get out of lessons, and what my existing skill level is. He is now aiming me in the right direction - and he is clearly skilled, experienced and knowledgeable, in addition to being very easy to get along with. I'm very happy.
Review by William Klepatsky
Very knowledgeable on every aspect of music theory. I listen to recording artists playing various classical pieces, Dan's playing is much like a recording artist's playing. Always on time. Winning happy personality, a great role model. Puts me at ease when I am playing. Have two friends who hold music degrees, I count him a third, something special about the minds and personalities of good pianists. Thanks Dan.
Review by Jermain
Mrs. Regnarene is an awesome teacher!!! She found musical aids that appealed to my 5 year old daughter and used them to help teach her piano. She has a lot of patience and I could tell she puts in the work before class to have a lesson ready for my daughter. She is always punctual, friendly and respectful. I would recommend her to any parents who want to start their kids off with a good foundation in piano. Jermain T. Riverview, FL
Review by Brianne Hancock
Martina has been teaching our daughter violin since early 2015. Every time our daughter has a lesson she comes away in such a great mood - she really enjoys her lessons! Martina is positive and encouraging and adjusts her teaching to help our daughter learn the best way for her learning needs. We were curious about how online lessons would work, and it turns out that they work really well. The 1:1 time and ability to teach from a distance make it work just as well as in person. We've had moves and schedule changes and Martina has been very flexible for us - which made such a big difference in making violin lessons accessible. Absolutely recommend her!
Review by Christopher Perrone
Mike has been working with my son Robert for over a year and has just started working with my daughter Kate. Mike is both a great musician and a good teacher. He connects with the kids and keeps them engaged. He is able to tailor the lesson to focus on music that is interesting to each child. He also encourages the students to participate in a public setting which is great. I would highly recommend Mike.
Review by Joshua Thompson
I have known Erin since I attended graduate school at the Hartt School in Connecticut. Last year she came to the college I teach at to give a master class and talk about her experiences as a musician abroad. She has proven that she is a capable and wonderful musician and educator. I highly recommend studying with her if you're lucky enough to have the opportunity!

subset: commoncrawl


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This was our first trip to Walt Disney World and we did not rent a vehicle so we were unsure how to get some necessities to our room. Garden Grocers had our order delivered to our room, on time as promised, we didn't even need to be in our room as the hotel made sure our items were placed in our mini refrigerator. Very convenient! Would highly recommend and the prices were reasonable.
Will absolutely use Garden Grocer again. So easy to use, and so convenient. Saved us time in the mornings before hitting the parks, not to mention the cost of breakfasts at Disney resorts.
Always excellent service. Flawless.


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Support Services Jobs in Qatar
63 Jobs Found: Showing 1 - 20
Maintenance TechnicianConfidential Company - QatarPosted 28 Jul1. Installs repairs and maintains electrical/electronic equipment, as needed on project sites. 2. Replaces units of parts such as starters, contact
Receptionist / Hostess - ArabicPosted 26 JulReceptionists are generally responsible for greeting customer's clients scheduling appointments, preparing documents and entering information and oth
Scheduling CoordinatorPosted 25 JulUnder the supervision of the Registrar, the successful candidate: Facilitates the processing, updating and maintaining of the computerized scheduling
site contract manager - MaintenancePosted 22 JulAct as an ambassador for Qatar aiways maintenance contract Lead and manage the local team and provide your technical expertise for the sucess of the
Team Leader - AutomotivePosted 20 JulAn exciting opportunity has arisen within Jaidah group for an experienced Team Leader to join our Automotive Division. You will be responsible for a
Valet Supervisor | AFGRE - Doha Destival City | Doha, QatarPosted 14 JulReal Estate Al-Futtaim Group Real Estate (AFGRE) is responsible for the development and operations of Al-Futtaim's real estate businesses across tThis employer achieved a Gold Career Provider status based on their record of hiring on Bayt.com.
Driver | AVR | Doha, QatarAl Futtaim Group - QatarPosted 14 JulAutomotive Al-Futtaim is regarded as a pioneer in the region's automotive industry. The company imported the first consignment of Toyota vehiclesThis employer achieved a Gold Career Provider status based on their record of hiring on Bayt.com.
Cargo Customer Services Agent (Sri Lanka and Philippines) | Qatar Aviation Services | DohaQatar Airways - QatarPosted 13 JulAbout Your Job: You will handle Import and transit documentation and notify consignee of the arrival of freight and collects payment for handling chThis employer achieved a Gold Career Provider status based on their record of hiring on Bayt.com.
Restaurant ManagerPosted 13 JulJob Purpose: To manage and control restaurant, to achieve budgeted sales and maximize profitability Duties & Responsibilities: • Responsible f
On Wing Support TechnicianGE - QatarPosted 28 JulThe On Wing Support technician based in Doha Qatar will be responsible for performing maintenance on GE/CFM commercial aircraft engines. The OWS tech10
Sr Highway Surveyor job in DohaPosted 28 JulDo you want to work with an award winning consultant and deliver some of the most prestigious and challenging projects across the Middle East? We11
Missile / Precision Guided Munitions (PGM) TechnicianPosted 28 JulMissile / Precision Guided Munitions (PGM) Technician <div id="1" class="contentlinepanel"12
Munitions TechnicianPosted 28 JulMunitions Technician Primary Location QATAR-13
Assistant Mechanic, Engine Shop | Qatar Airways | DohaPosted 28 JulAbout Your Job: You will be responsible for performing engine workshop and maintenance tasks as directed by the Lead Mechanic or Mechanic to the hi14
Construction Manager (Highways) - Doha, Qatar job in DohaPosted 22 JulProject Brief: The Expressways Projects are a programme of highway projects within Qatar that have been divided into 9 Groups. CH2M have been awa15
PATRIOT Systems Repairer (D/S)Vectrus - QatarPosted 22 JulPATRIOT Systems Repairer (D/S) (APS) We are committed to an inclusive and diverse workplace th16
Senior Pharmacy TechnicianPosted 22 JulSummary PE Global Healthcare is currently recruiting Senior Pharmacy Technicians on behalf of the leading public healthcare provider in Qatar for17
Land SurveyorPosted 20 JulLouis Berger is an Engineering News-Record top- ranked, $1 billion global professional services corporation that helps clients solve their most comple18
Piping Engineer (Paint & Insulation)Kentz - QatarPosted 18 JulKentz, a member of the SNC-Lavalin Group has an exciting and challenging opportunity for Piping Engineer (Paint & Insulation) to work in Qatar. Respo19
Munitions Support Equipment (MSE) Maintenance Crew ChiefPosted 16 JulMunitions Support Equipment (MSE) Maintenance Crew Chief <div id="1" class="contentlinepan20
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text: I have been to Postino's in Gilbert but not to this location, until just recently. I took a friend there for a birthday lunch and it was great...just like the Gilbert Postino's. We had a nice casual seating table with comfy chairs. It was a nice setting to talk and relax. The Pinot Grigio was crisp and cold. The bruschetta... More


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Relevant offers
The finalists have been announced for the Nelson Sports Awards at the Annesbrook Church in Stoke on November 28.
Seven sportspeople will vie for the Sportsman and Sportswoman of the Year awards.
Another 19 individuals and teams are among the finalists in categories for teams, coaches, junior and masters athletes, while four people will be recognised with Lifetime Contribution awards. One athlete will become the Nelson Sportsperson of the Year.
Television personality Nick Tansley will host the evening, and the guest speaker will be Olympic gold medallist Valerie Adams.
Sport Tasman event manager Rita Merriman said getting Adams, a world, Commonwealth and Olympic champion, was a real coup for the region, and to cater for those who just wanted to hear Adams speak, gallery tickets would be available at $15.
Tickets for the full evening cost $85, which includes a three-course meal and drinks.
For information and tickets, contact Rita Merriman, 03 923 2311 or firstname.lastname@example.com
Nelson Pine Industries Sportsman of the Year: Peter Hodson (lawn bowls), Mika Vukona (basketball), David Shaw (yachting), Patrick Shone (volleyball).
Westpac Sportswoman of the Year: Jo Edwards (lawn bowls), Britta Martin (triathlon), Jessica Bygate (basketball).
More FM Sports Team of the Year: NZ Women's Pairs - Jo Edwards and Val Smith (lawn bowls), ASB Nelson Pine Men's Team (volleyball), Team Seagate - Nathan Fa'avae, Sophie Hart, Trevor Voyce, Chris Forne (adventure racing).
ASB Bank Junior Sportsman of the Year: Mitchell Drummond (rugby/touch/sevens), Finn Delany (basketball/volleyball), Hamish Harwood (motocross), Connor Neynens (cricket).
Sport NZ Junior Sportswoman of the Year: Emily Jensen (football), Rebecca Kersten (hockey/touch/sevens), Simone Jarrett (underwater hockey).
Nelson Mail Junior Sports Team of the Year: Nelson U19 Men's Team (basketball), Waimea College Senior A Team (netball), Waimea College U16 Double Sculls - Sam Johnston and Sean Ducray (rowing).
Canterbury Community Trust Coach of the Year: Jade Thompson (motocross), Greg Lautenslager (athletics), Colin Redpath (volleyball).
Printhouse Masters Sportsperson/Sports Team of the Year: Jonathan Linyard (triathlon), Phil Costley (athletics), Steve Low (athletics).
Bowater Motor Group Lifetime Contribution to Sport: Bob Cooke (motorcycling), Rosalie Winter (hockey), Robert Winter (hockey), David Jones (hockey).
- The Nelson Mail
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Nelson Suburbs unleash the shackles in one-sided encounter against Universities
Tasman United held by Parklands in Mainland Women's Premier League
Ben Sigmund in doubt for Cashmere Technical's Chatham Cup quarter-final
Nelson College bogged down despite comfortable UC Championship rugby win
Richmond Rabbits hold off Wanderers Wolves to claim Tasman league title
Pines denied record as Mauao clinch maiden Volleyball New Zealand club championship
Nelson Suburbs still weighing up options to replace Atkin Kaua in starting lineup
Fit and healthy Jack Bauer disappointed to miss out on Olympic Games road race
Pines hoping big game experience will see them through in Volleyball NZ final
Pines power through to Volleyball New Zealand club championships final
Stoke shutdown Jacks as premier netball returns after two week break
Nelson College hoping to seal UC Championship playoff berth
Wolves chasing first premier league title against seasoned Rabbits side
Nelson's Chalmers ready for action in next MMA Princesses of Pain promotion
Cancelled Jetstar flight dashes Disney on Ice dreams for Nelson children
Curious case of the unlucky goldminer and the war widow
Collingwood Area School reintroduces uniform after years of mufti
Having to play God for a faithful friend
Masked Parade brings book characters to life
Letter fuels grey battle for power
Thai flavours hit Nelson waterfront
Parents of missing Dutch tourist keep searching
Couple lucky to escape Stoke house fire
Craft brewing capital title under threat
Incentives to boost Nelson's inner-city living
Embattled Grey Power president withdraws from fight
Kiwi mums offered hope after in utero spina bifida surgery breakthrough
Cancelled Jetstar flight dashes Disney on Ice dreams for Nelson children
Having to play God for a faithful friend
Curious case of the unlucky goldminer and the war widow
Collingwood Area School reintroduces uniform after years of mufti
Pair not guilty of alleged assaults at Wakefield pig hunt after party
Ben Sigmund in doubt for Cashmere Technical's Chatham Cup quarter-final
Nelson College bogged down despite comfortable UC Championship rugby win
A Time and a Place: An iconic Nelson building gets demolished
Givealittle 5 per cent fee may cause stress for campaigners
Tasman United held by Parklands in Mainland Women's Premier League


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vice president sales jobs
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VP Sales - Healthcare (Rev Gen)
West Corporation - Omaha, NE
Vice President of Sales. This VP role will be part of the world's largest network of Inside Sales and Sales Models beyond 'Feet on the Street' experts, who...
Regional Sales Manager
Mirixa Corporation - Reston, VA
Meet unit and revenue targets set by Vice President of Sales. Provide accurate sales forecasts. Communicate sales activities on a regular basis to Marketing,...
Federal Sales Director-DoD/IC
Nuix - Herndon, VA
This full time permanent position reports to Vice President, Public Sector Sales. Ability to close sales through effective and aggressive sales and negotiation...
Manager, Sales (East)
Alteryx, Inc. - New York, NY
The Manager, Sales will report to the National Vice President, Enterprise Sales and provide leadership and guidance to a dynamic sales team....
Sales Vice President / HIT Sales VP
Virtelligence - Seattle, WA
Sales and Business Development:. Responsibilities of the Healthcare IT Business Development / Sales VP (HIT & IT Staffing Sales)*....
Vice President of Sales, Americas
Tenable Network Security Inc. - Remote
Develop and implement a consistent overall sales process, set appropriate metrics for sales pipeline management, and use sales force automation tools to...
Vice President, Enterprise Sales
Velocify - El Segundo, CA
Vice President, Enterprise Sales. The Vice President of Enterprise Sales will report to SVP of Sales and Business Development....
Senior Vice President of Worldwide Sales
NetBrain Technologies, Inc. - Burlington, MA
An immediate opportunity exists for a Senior Vice President of Worldwide Sales who will lead the rapid expansion of sales teams across the globe....
Industrial & Safety Sales- Eastern NY
Magid Glove & Safety - Albany, NY
In this key position of District Sales Manager, the selected candidate will report directly to the Regional Vice President of Sales....
Account Executive
bizjobz - New York, NY
This position reports to the Vice President of Sales and is based out of our New York City Office and travel as needed internationally (25%-35%) Duties and...


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For our third annual list, we sought to highlight literature that exposes readers to cultures and ways of life that may be different from their own...
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"Open Leadership is a bold book with an even bolder agenda, dealing directly with the tensions between openness and order. Charlene Li skillfully describes the strategies and tactics that will enable leaders to thrive in this new culture. The book is a masterwork and it belongs on every manager's desktop and in every business school classroom. You need to know how to thrive in a world where openness is the new normal, and this is the book that will tell you how."Jim Kouzes, coauthor, The Leadership Challenge and The Leader's Legacy
"If you work for a major brand or even a minor one, you're probably scared to death. After all, if you're a top-down organization, the Internet is not your friend. Here's a tip: Buy two copies of Charlene's new book, one for your boss and one for you."Seth Godin, author, Linchpin
"Are you befriended by Facebook or do you tremble at Twitter? Love it or fear it, you need new leadership strategies to master today's socially networked world. Charlene Li's knowledgeable, practical, and engaging book shows how to cope and conquer while letting go of command and control. Open Leadership is the right idea at the right time, full of important role models and guideposts for the future."Rosabeth Moss Kanter, professor, Harvard Business School; director of the Harvard Advanced Leadership Initiative; and author, Confidence and SuperCorp
"Charlene makes it clear: Open up or die. No matter where you are on the open curve, Charlene's book will transform your thinking and ignite change."Guy Kawasaki, Co-founder, Alltop
"Be Open, Be Transparent, Be Authentic" are the current leadership mantras-but companies often push back. Business is premised on the concept of control and yet the new world order demands openness-leaders do not know how to be open and be in control. This must-have resource will help the modern leader understand how to lead in the new open world-where blogging, twittering, facebooking, and digging are becoming the norm. the author lays out the steps that leaders must take to transform their organizations and themselves into being "open" -and exactly what that will mean.
In easy-to-understand language, this book will help leaders orient themselves to social networking and other technological advances.
In Open Leadership Charlene Li (the coauthor of the blockbusting bestseller Groundswell) offers the next step resource that shows leaders how to tap into the power of the social technology revolution and use social media to be "open" while maintaining control. This important book explains how Facebook, Twitter, YouTube, Yammer, Jive, and other popular social media sites can improve efficiency, communication, and decision making for leaders and their organizations.
As Li explains, openness requires morenot lessrigor and effort than being in control. Open Leadership reveals step-by-step, with illustrative case studies and examples from a wide range of industries and countries, how to bring the precision of this new openness both inside and outside the organization. The author includes suggestions that will help an organization determine an open strategy, weigh the benefits against the risk, and have a clear understanding of the implications of being open. The book also contains guidelines, policies, and procedures that successful companies have implemented to manage openness and ensure that business objectives are at the center of their openness strategy.
By embracing social media, leaders can transform their organizations to become more effective, decisive, and ultimately more profitable in this new era of openness in the marketplace.
I The Upside of Giving Up Control.
1 Why Giving Up Control Is Inevitable.
2 The Ten Elements of Openness.
II Crafting Your Open Strategy.
3 Determining How Open You Will Be.
4 Understanding and Measuring the Benefits of Being Open.
5 Structuring Openness with Sandbox Covenants.
6 Orchestrating Your Open Strategy.
III Open Leadership: Redefining Relationships.
7 Open Leadership: Mind-sets and Traits.
8 Nurturing Open Leadership.
9 The Failure Imperative.
10 How Openness Transforms Organizations.
The Author.
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- Marcus North Shore Cinemas
Mequon, WI
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Marcus Theatres announced this week that the renovations to the North Shore Cinema in Mequon, Wisconsin have been completed.
The most noticeable change to passers-by on I-43 and on Port Washington Road is the addition of a new covered entrance that is a welcome change from the somewhat bland and un-theater-like original entrance (see photo in the Photo Gallery). A new road sign also alerts drivers on Port Washington Road that there is more going on than just a new entrance, as it proudly announces the presence of one of Marcus' signature UltraScreens and a Zaffiro's Pizzaria and Bar.
"We are thrilled to announce the completion of our North Shore Cinema renovations," said Bruce J. Olson, president of Marcus Theatres. "Once inside, guests will be greeted with a brand-new open lobby area featuring elegant, art-moderne styling, designer lighting, marble floors and relaxing music from a grand piano. The lobby is also home to a new box-office, in addition to an expanded concession area and the Hot Zone, where guests can enjoy Zaffiro's pizza, sandwiches, wraps and popular appetizers hot and fresh."
The UltraScreen at the North Shore Cinema features a 70-foot-wide screen and two levels, where the upper level contains an adults-only lounge and reserved seating. "Guests can enjoy a premium entertainment package which includes admission, food and beverage vouchers and complimentary reserved seating in UltraComfortable oversized chairs with side tables and reclining backs," said Olson.
Fans of thin-crust pizza will rejoice that Zaffiro's Pizzeria and Bar will be open to the public and moviegoers alike every day for lunch and dinner. It also boasts a full selection of wine, beer and cocktails.
Not to be left out of the renovation fun, the theater's other 10 screens have received new seating with reclining backs and "memory foam" cushions.
Currently, we have two nighttime shots of the exterior of the building on the Photo Galleries page, but as time permits, we'll get some more photos of the exterior and interior as well. A video was taken of the Grand Opening, including the ceremonial "film cutting" in the new UltraScreen:
Source: Marcus Theatres Press Release
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just after sunset
Fullmånen var stor i går, så jeg tengte jeg skulle ta et par, siden jeg kunne.
Tversted beach - in northen Jutland near Hirtshals.
Sunset off the LaSalle gate of Langley AFB
Gigapan of the Downtown Houston Skyline Sunset to Night from the Main building of the University of Houston Downtown's Observation Deck. More info at citizendoug.com/?p=2736 citizendoug.com Copyright 2013 Douglas Robertson for Citizen Doug Productions
For more Gigapans of Sandy Hook see gigapan.org/gigapans/most_popular/?q=brianlr+sandy+hook
Demo para Urbanova S.A. Foto: Claudio Escobillana mas info en firstname.lastname@example.com
This was taken at Black Rock Station several days before Burning Man 2011 opened to the public. There was still a lot of stuff there. Can you find the Temple? D80 and 85mm 1.8, handheld, stitched with Kolor, tweaked in shop.
San Antonio's downtown skyline is illuminated at dusk, as seen from the north. Highway 281 curves into the scene and this view is from the North facing South. Our thanks go to the Trinity Tower II Office Building for their kind assistance in granting access to the roof so we could create this shot. This image is 268...


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Tuesday, July 26, 2016
Brasilia by Broyhill, Credenza
As the world begins to look to Brazil, so do we. The Brasilia Collection was first introduced by Broyhill at the 1962 Seattle World's Fair. The collection was inspired by Brasilia, the newly erected capital city of Brazil. The thoroughly modern city of Brasilia, with its buildings of abstract forms and curves, owes it's design and architecture in large part to architect Oscar Niemeyer. The inspiration of his distinctive forms is quite apparent in the architecture of Broyhill's Brasilia Collection. This pecan and walnut credenza from the collection has three center drawers with sculptural brushed brass hardware which are flanked by doors on either side. The door fronts have raised sculptural decoration which serve as the pulls. 46" l., 17" d., 28" h. American, c. 1962 SOLD
Palacio da Alvorada
Brasilia's Cathedral
Hickory Furniture Credenza
Saturday, July 23, 2016
Willett Furniture Co. Desk
Friday, July 22, 2016
Kittinger Furniture Company Credenza
Stanley Furniture Shelving Unit
Tuesday, July 19, 2016
Quatrefoil Pouf
Fresh Fish
Kem Weber Chrome and Naugahyde Chairs
Circles Coffee Table
Friday, July 15, 2016
Olexander Wlasenko; Stairwell
Fresh from our framer, this is one our favorite works by Olexander. The mood is beautiful. The drawing was inspired by a scene in a 1961 French mystery film Paris nous appartient, sometimes translated as Paris is Ours. It was directed by Jacques Rivette and stars Betty Schneider. Begun in 1957 and completed three years later, it was then-critic Rivette's first full-length film as a director and one of the first works of the French New Wave.
Olexander Wlasenko; Stairwell, 2016
Charcoal on paper
44" x 32" framed
Blue Steel
Thank you to the great team at Designlines; 'Toronto's Ultimate Guide to Design' Mag. for including us when they hit the Hammer!
Please click on the link below to read all about Hamilton's top design destinations....
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text:
|Publication number
|Publication type
|Application number
|Publication date
|Apr 9, 2002
|Filing date
|Sep 21, 2000
|Priority date
|Sep 24, 1999
|Fee status
|Publication number
|Susan H. Chen, Simon S. Chan
|Original Assignee
|Advanced Micro Devices, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (11), Referenced by (11), Classifications (12), Legal Events (6)
|External Links: USPTO, USPTO Assignment, Espacenet
This application claims priority from Provisional Application Serial No. 60/155,547, filed on Sep. 24, 1999 entitled: "POST-SPACER ETCH SURFACE TREATMENT FOR IMPROVED SILICIDE FORMATION", the entire disclosure of which is hereby incorporated by reference therein.
The present invention relates to a method of manufacturing high-density integrated circuit semiconductor devices exhibiting reliable, adherent, low resistance, well-aligned contacts to source, drain, and gate electrode regions of active devices, such as MOS transistors formed in or on a semiconductor substrate, by utilizing self-aligned, refractory metal silicide ("salicide") processing methodology. The present invention has particular utility in manufacturing high-density integration semiconductor devices, including multi-level devices, with design rules of 0.18 μm and below, e.g., 0.15 μm and below.
The escalating requirements for high density and performance associated with ultra-large scale integration (ULSI) devices necessitate design rules of 0.18 μm and below, such as 0.15 μm and below, with increased transistor and circuit speeds, high reliability, and increased manufacturing throughput. The reduction of design features, e.g., of source, drain, and gate regions of transistors formed in or on a common semiconductor substrate, challenges the limitations of conventional contact and interconnection technology, including conventional photolithographic, etching, and deposition techniques.
As a result of the ever-increasing demand for large-scale and ultra-small dimensioned integrated semiconductor devices, self-aligned techniques have become the preferred technology for forming such devices in view of their simplicity and capability of high-density integration. As device dimensions decrease in the deep sub-micron range, both vertically and laterally, many problems arise, especially those caused by an increase in sheet resistance of the contact areas to the source and drain regions and junction leakage as junction layer thickness decreases. To overcome this problem, the use of self-aligned, highly electrically conductive refractory metal silicides, i.e., salicides, has become commonplace in the manufacture of integrated circuit semiconductor devices comprising, e.g., MOS type transistors. Another technique employed in conjunction with refractory metal silicide technology is the use of lightly-doped source and drain extensions formed just at the edge of the gate region, while more heavily-doped source and drain regions, to which ohmic contact is to be provided, are laterally displaced away from the gate by provision of sidewall spacers on opposing sides of the gate electrode.
Salicide processing involves deposition of a metal that forms an intermetallic compound with silicon, but does not react with silicon oxides, nitrides, or oxynitrides under normal processing conditions.
Refractory metals commonly employed in salicide processing include platinum (Pt), titanium (Ti), nickel (Ni), and cobalt (Co), each of which forms very low resistivity phases with silicon (Si), e.g., PtSi2, TiSi2, NiSi, and CoSi2. In practice, the refractory metal is deposited in uniform thickness over all exposed upper surface features of a Si wafer, preferably by means of physical vapor deposition (PVD) from an ultra-pure sputtering target and an ultra-high vacuum, multi-chamber DC magnetron sputtering system. In MOS transistor formation, deposition is generally performed both after gate etch and after source/drain junction formation. In a less common variant, source/drain junction formation is effected subsequent to refractory metal layer deposition via dopant diffusion through the refractory metal layer into the underlying semiconductor. In either case, after deposition, the refractory metal layer blankets the top surface of the gate electrode, typically formed of heavily-doped polysilicon, the silicon oxide, nitride, or oxynitride sidewall spacers on the opposing side surfaces of the gate electrode, the silicon oxide isolation regions formed in the silicon substrate between adjacent active device regions, and the exposed surfaces of the substrate where the source and drain regions are formed or will be subsequently formed. As a result of thermal processing, e.g., a rapid thermal annealing process (RTA) performed in an inert atmosphere, the refractory metal reacts with underlying Si to form electrically conductive silicide layer portions on the top surface of the polysilicon gate electrode and on the exposed surfaces of the substrate where source and drain regions are or will be formed. Unreacted portions of the refractory metal layer, e.g., on the silicon oxide, nitride, or oxynitride sidewall spacers and the silicon oxide isolation regions, are then removed, as by a wet etching process selective to the metal silicide portions. In some instances, e.g., with Co, a first RTA step may be performed at a relatively lower temperature in order to form first-phase CoSi which is then subjected to a second RTA step performed at a relatively high temperature to convert the first-phase CoSi to second-phase, lower resistivity CoSi2.
Illustrated in FIGS. 1(A)-1(E) are steps in a typical salicide process, illustratively CoSi2, for manufacturing MOS transistors and CMOS devices according to the conventional art. The term "semiconductor substrate" as employed throughout the present disclosure and claims, denotes a Si-containing wafer, e.g., a monocrystalline Si wafer, or an epitaxial Si-containing layer formed on a semiconductor substrate comprising at least one region 1 of a first conductivity type. It will be appreciated that for P-MOS transistors, region 1 is n-type and for N-MOS transistors, region 1 is p-type. It is further understood that the substrate may comprise pluralities of n- and p-type regions arrayed in a desired pattern, as, for example, in CMOS devices.
Referring more particularly to FIG. 1(A), reference numeral 1 indicates a region or portion of a Si-containing semiconductor substrate of a first conductivity type (p or n), fabricated as a MOS transistor precursor 2 for use in a salicide process scheme. Precursor 2 is processed, as by conventional techniques not described here in detail, in order to not unnecessarily obscure the primary significance of the following description. Precursor 2 comprises a plurality of, illustratively two, isolation regions 3 and 3′ of a silicon oxide, e.g., shallow trench isolation (STI) regions, extending from the substrate surface 4 to a prescribed depth below the surface. A gate insulator layer 5, typically comprising a silicon oxide layer about 25-50 Å thick, is formed on substrate surface 4. Gate electrode 6, typically of heavily-doped polysilicon, is formed over a portion of silicon oxide gate insulator layer 5, and comprises opposing side surfaces 6′, 6′, and top surface 6″. Lightly-doped, shallow depth source and drain regions 7, 8 are then implanted on either side of gate electrode 6, with the latter acting as an implantation mask. Blanket layer 9 of an insulative material, typically an oxide, nitride, or oxynitride of silicon, is then formed to cover all exposed portions of substrate surface 4 and the exposed surfaces of the various features formed thereon or therein, inter alia, the opposing side surfaces 6′, 6′ and top surface 6″ of gate electrode 6 and the upper surface of STI regions 3, 3′. The thickness of blanket insulative layer 9 is selected so as to provide sidewall spacers 9′, 9′ of desired width (see below) on each of the opposing side surfaces 6′, 6′ of the gate electrode 6.
Referring now to FIG. 1(B), MOS precursor structure 2 is then subjected to an anisotropic etching process, as by reactive plasma etching utilizing a fluorocarbon- or fluorohydrocarbon-based plasma comprising argon (Ar) and at least one reactive gaseous species selected from CF4 and CIF3, for selectively removing the laterally extending portions of insulative layer 9 and underlying portions of the gate oxide layer 5, whereby sidewall spacers 9′, 9′ of desired width profile are formed along the opposing side surfaces 6′, 6′ of gate electrode 6.
Adverting to FIG. 1(C), moderately- to heavily-doped source and drain junction regions 7′ and 8′ of conductivity type opposite that of the substrate are then formed in substrate region 1, as by ion implantation and high temperature annealing, with sidewall spacers 9′, 9′ acting as implantation masks and setting the lateral displacement length of moderately- to heavily-doped regions 7′ and 8′ from their respective lightly doped, shallow depth source and drain extensions 7″ and 8″.
With reference to FIG. 1(D), in a following step, a layer 10 of a refractory metal, typically Co, Ni, or Ti, is formed, as by DC sputtering, to cover the exposed upper surfaces of precursor 2. Following refractory metal layer 10 deposition, a thermal treatment, typically rapid thermal annealing (RTA), is performed at a temperature and for a time sufficient to convert metal layer 10 to the corresponding electrically conductive metal silicide, e.g., PtSi2, CoSi2, NiSi, or TiSi2. Since the refractory metal silicide forms only where metal layer 10 is in contact with the underlying silicon, the unreacted portions of metal layer 10 formed over the silicon oxide isolation regions 3 and 3′ and silicon nitride sidewall spacers 9′, 9′ are selectively removed, as by a wet etch process.
Referring now to FIG. 1(E), the resulting structure is depicted after reaction and removal of unreacted metal comprises metal silicide layer portions 11 and 12, 12′ respectively formed over gate electrode 6 and heavily-doped source and drain regions 7′ and 8′. Further processing may include, inter alia, formation of metal contact and dielectric insulator layers. However, as is evident from FIG. 1(E), the lower surfaces of the metal silicide layer 12, 12′ portions formed by the above-described methodology are rough at the silicide-silicon interfaces, disadvantageously resulting in penetration of the underlying silicon substrate 1 by the silicide. Such penetration or "spiking" of the silicon in the region below the source and drain junction regions 7′ and 8′, illustratively shown at 13, can cause local shorting of the junctions, thereby resulting in junction leakage. The effect of junction penetration or spiking is greatest with metals such as Co, which have relatively high silicon consumption ratios. Junction penetration or spiking can be moderated or at least minimized and improved junction integrity provided by increasing the junction depth of source and drain regions 7′ and 8′ or by providing a thinner refractory metal layer, thereby reducing silicon consumption during silicidation. However, neither of these alternatives is satisfactory: the former approach runs counter to the trend toward smaller device dimensions, both vertically and laterally, in order to increase transistor switching speeds, and the latter approach results in an increase in metal silicide sheet resistance attendant its decrease in thickness.
A number of techniques for reducing leakage in ultra-shallow junctions employed in MOSFET type semiconductor devices have been proposed, such as are disclosed in U.S. Pat. Nos. 4,835,112; 5,208,472; 5,536,684; and 5,691,212. Such techniques, however, materially add to process complexity and include such steps as germanium implantation to retard dopant diffusion, provision of multiple dielectrics at the edges of the gate electrode, formation of a CoSi2—TiNx bi-layer followed by removal of the TiNx layer and ion implantation of the remaining CoSi2 layer, and formation of an amorphous silicon layer on a silicon MOS precursor and subsequent implantation, oxidation, annealing, etc., steps.
Thus, there exists a need for a simplified methodology for forming self-aligned silicide (i.e., salicide) contacts to ultra-thin transistor source and drain regions which provide low contact sheet resistance, absence of spiking, at least minimal junction leakage, and easy comparability with conventional process flow for the manufacture of MOS-based semiconductor devices, e.g., CMOS devices. Moreover, there exists a need for an improved process for fabricating high quality, low junction leakage MOS transistor-based devices which provides increased manufacturing throughput and product yield.
These and other needs are met by embodiments of the present invention which provide a method of manufacturing a semiconductor device comprising the steps of providing a semiconductor substrate having a surface and forming a gate electrode on a portion of the semiconductor substrate surface. The gate electrode has first and second opposing side surfaces and a top surface. A blanket layer of an insulative material is formed over the exposed portions of the semiconductor substrate surface and on the first and second opposing side surfaces and the top surface of the gate electrode. By anisotropic etching, the blanket layer of insulative material is removed from the substrate surface, as well as the blanket layer of insulative material from the top surface of the gate electrode. In this manner, an insulative sidewall spacer is formed on each of the first and second opposing side surfaces of the gate electrode, and portions of the substrate surface adjacent the sidewall spacers are exposed. Sacrificial oxide is created at the semiconductor substrate surface. Sacrificial oxide contains residue on the semiconductor substrate surface resulting from the anisotropic etching of the blanket layer. The sacrificial oxide is then removed from the semiconductor substrate surface to thereby remove the residue. In certain preferred embodiments, silicide is then formed in the semiconductor substrate surface regions.
One of the advantages of the present invention is a removal of the residues, such as carbonaceous residues that are created during formation of sidewall spacers. The residues are the result of the etching of the blanket layer of insulative material, such as by use of a reactive gaseous species such as CF4 or CHB3. These residues passivate the source/drain areas, and damage these junctions. A silicide, such as cobalt silicide, formed on top of the damaged and contaminated source/drain areas, can uncontrollably spike the junction to the weak points of the damaged silicon. The carbonaceous residues also prevent uniform cobalt silicide formation. However, by forming a sacrificial oxide in accordance with the present invention, the residues are removed when the sacrificial oxide is removed.
In certain preferred embodiments of the invention, the sacrificial oxidation is formed at an elevated temperature, such as at about 800� C., to anneal out the damaged silicon, in addition to eliminating of the carbonaceous residue.
The earlier stated needs are also met by another embodiment of the present invention which provides a method of manufacturing a semiconductor device. This method includes the steps of forming a gate electrode on a semiconductor substrate, forming junctions in the semiconductor substrate, and forming sidewall spacers on the gate electrode. The forming of the sidewall spacers creates residue on the semiconductor substrate. A sacrificial oxide is formed on the semiconductor substrate and this sacrificial oxide is then removed with the residue.
Additional advantages and aspects of the present invention will become readily apparent to those skilled in the art from the following detailed description, wherein only the preferred embodiment of the present invention is shown and described, simply by way of illustration of the best mode contemplated for carrying out the method of the present invention. As will be described, the present invention is capable of other and different embodiments, and its several details are susceptible of modification and various obvious respects, all without departing from the spirit of the invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as limitative.
The following detailed description of the embodiment of the present invention can best be understood when read in conjunction with the following drawings, in which like reference numerals are employed throughout to designate similar features.
FIGS. 1(A)-1(E) illustrate, in simplified, cross-sectional schematic form, a sequence of steps performing MOS type transistors utilizing salicide technology according to conventional practices.
FIG. 2 illustrates, in simplified, cross-sectional schematic form, a portion of a semiconductor wafer following a spacer etch in accordance with embodiments of the present invention.
FIG. 3 illustrates, in simplified, cross-sectional schematic form, the portion of the semiconductor wafer of FIG. 2 following a sacrificial oxidation performed in accordance with embodiments of the present invention.
FIG. 4 illustrates, in simplified, cross-sectional schematic form, the portion of the semiconductor wafer of FIG. 3 after removal of the sacrificial oxide in accordance with embodiments of the present invention.
FIG. 5 illustrates, in simplified, cross-sectional schematic form, an MOS transistor comprising salicide source and drain contacts formed by the method of the present invention.
The present invention addresses and solves problems arising from manufacturing submicrondimensioned, ultra-shallow junction MOS and CMOS transistors suitable for use in high-density integration semiconductor devices, wherein, as part of the fabrication methodology, insulative sidewall spacers are formed by selective anisotropic etching of a blanket insulator layer, which sidewall spacers act as at least part of an implantation mask during formation of moderately-to-heavily-doped source/drain junction regions to which electrical contact is made by use of salicide technology. More specifically, the present invention advantageously provides a significant and substantial reduction in the amount and severity of spiking resulting from junction penetration during the salicidation reaction performed as part of the salicide processing, which spiking deleteriously affects junction quality, typically manifested as increased junction leakage current. Furthermore, the inventive methodology provides a more uniform salicide formation. The inventive methodology thus provides increased device reliability while decreasing product yield problems associated with the conventional methodology. In addition, the inventive method is fully compatible with other aspects of existing processing methodology.
Referring now to FIG. 2, this figure represents the state of an MOS device precursor after anisotropic selective etching of the blanket insulator layer 9 typically comprised of an oxide, nitride, or oxynitride of silicon, performing insulative sidewall spacers 9′, 9′. As previously indicated, such anisotropic selective etching typically comprises reactive plasma etching utilizing a flourocarbon- or flourohydrocarbon-based plasma, comprising at least one reactive, carbon-containing gaseous species, e.g., CF4 and CHF3. The present invention is based upon the recognition that such selective anisotropic reactive plasma etching utilizing flourocarbon- and/or flourhydrocarbon-based materials disadvantageously results in formation of a carbonaceous residue or contaminant 14 on at least the exposed portions of the substrate surface 4 overlying lightly-doped, shallow-depth source and drain region 7, 8, which residue causes uneven silicidation reaction during subsequent processing, leading to junction penetration or spiking, as illustratively indicated earlier at reference numeral 13 in FIG. 1(E).
Following the anisotropic etching to form the sidewall spacers 9′, 9′, the methodology of the present invention forms a sacrificial oxide on the semiconductor substrate surface 4. This is depicted in FIG. 3 in which the sacrificial oxide is provided with reference numeral 17. In order to form the sacrificial oxide, in certain embodiments the semiconductor wafer is placed in an oxygen (O2) ambient. The oxidation is performed at a temperature between about 600� C. and 900� C., and most preferably at about 800� C. One of the advantages of performing the oxidation at a relatively high temperature as provided above, is that the silicon in the substrate has been damaged during the sidewall spacer formation by the etching process is annealed out.
Following the formation of the sacrificial oxide, a sacrificial oxide removal step is then performed, the results of which are depicted in FIG. 4. The removal of the sacrificial oxide, using a wet etching process, employing HF as an etchant, for example, removes the sacrificial oxide 17 from the semiconductor substrate 1. As can be seen in FIG. 4, a portion of the substrate is actually removed by the removal of the sacrificial oxide 17. At the same time, however, the carbonaceous residue previously created during the etching is also removed. Furthermore, since the sacrificial oxidation process is performed at an elevated temperate of approximately 800� C. in preferred embodiments, the damage done to the silicon substrate is annealed out.
Following the removal of the sacrificial oxide 17, the surfaces of the junctions 7′, 8′, the subsequent salicide reaction proceeds in a conventional manner, such as already described in FIGS. 1(C)-1(E). In other words, a refractory middle layer may be deposited over the semiconductor wafer, followed by annealing steps to create silicide regions 11, 12, 12′ in those locations where the middle refractory layer interfaces with a silicon or polysilicon material. Since the source and drain regions 7′, 8′ do not contain any residue 14 and since damage has been annealed out in the sacrificial oxidation step, a uniform silicide formation over the source and drain regions 7, 8 may be achieved. In preferred embodiments of the invention, the silicide comprises titanium silicide, cobalt silicide, nickel silicide, platinum silicide, or tungsten silicide. Junction leakage has been prevented by the elimination of spiking since the damaged silicon has been annealed and the post etch residues have been removed.
In the previous description, numerous specific details were set forth, such as specific materials, structures, reactants, processes, etc., in order to provide a better understanding of the present invention. However, the present invention can be practiced without resorting to the details specifically set forth. In other instances, well-known processing materials and techniques have not been described in order not to unnecessarily obscure the present invention.
Only the preferred embodiment of the present invention and but a few examples of its versatility are shown and described in the present disclosure. It is to be understood that the present invention is capable of use in various other combinations and environments and is susceptible of changes or modifications within the scope of the inventive concept as expressed herein.
|Cited Patent
|Filing date
|Publication date
|Mar 8, 1988
|May 30, 1989
|Motorola, Inc.
|CMOS salicide process using germanium implantation
|Jun 3, 1992
|May 4, 1993
|Industrial Technology Research Institute
|Double spacer salicide MOS device and method
|May 27, 1992
|Jul 27, 1993
|Mitsubishi Denki Kabushiki Kaisha
|Method of producing field effect transistor
|Jun 30, 1994
|Jul 16, 1996
|Intel Corporation
|Process for formation of epitaxial cobalt silicide and shallow junction of silicon
|Sep 27, 1996
|Nov 25, 1997
|Taiwan Semiconductor Manufacturing Company, Ltd.
|MOS device structure and integration method
|Aug 9, 1996
|Aug 24, 1999
|Advanced Micro Devices, Inc.
|Integrated circuit having, and process providing, different oxide layer thicknesses on a substrate
|Feb 1, 1999
|May 23, 2000
|United Semiconductor Corp.
|Method of removing carbon contamination on semiconductor substrate
|Aug 17, 1999
|Feb 6, 2001
|Advanced Micro Devices, Inc.
|MOS transistor formation
|May 27, 1999
|May 29, 2001
|Advanced Micro Devices, Inc.
|Self-aligned silicide gate technology for advanced deep submicron MOS device
|Sep 28, 2000
|Jul 24, 2001
|Winbond Electronics Corp.
|Method of fabricating a semiconductor device with elevated source/drain regions
|May 25, 1998
|Jan 7, 1999
|Mitsubishi Electric Corp
|MOS transistor device with field screening isolation structure
|Citing Patent
|Filing date
|Publication date
|May 4, 2001
|Jun 3, 2003
|Dalsa Semiconductor Inc.
|Method of forming spacers in CMOS devices
|Sep 24, 2001
|Jun 24, 2003
|Sharp Kabushiki Kaisha
|Semiconductor device and method of manufacturing the same
|Nov 21, 2002
|Aug 23, 2005
|The Regents Of The University Of North Texas
|Method for removing contaminants on a substrate
|Apr 29, 2004
|Jun 27, 2006
|Advanced Micro Devices, Inc.
|Method of forming a metal silicide
|Jan 24, 2012
|Advanced Micro Devices, Inc.
|Integrated circuit eliminating source/drain junction spiking
|Dec 5, 2011
|Feb 4, 2014
|Institute of Microelectronics, Academy of Sciences
|Method for manufacturing semiconductor device
|Nov 21, 2002
|May 27, 2004
|Regents Of The University Of North Texas
|Method for removing contaminants on a substrate
|Apr 29, 2004
|Dec 2, 2004
|Karsten Wieczorek
|Method of forming a metal silicide
|Jun 10, 2004
|Feb 24, 2005
|Tomohiro Saito
|Semiconductor device and method of manufacturing the same
|Sep 15, 2004
|Mar 16, 2006
|Manoj Mehrotra
|Thermal oxidation for improved silicide formation
|Dec 12, 2006
|Oct 23, 2008
|Nxp B.V.
|Source and Drain Formation in Silicon on Insulator Device
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Feb 5, 2001
Owner name: ADVANCED MICRO DEVICES, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHEN, SUSAN H.;CHAN, SIMON S.;REEL/FRAME:011538/0645;SIGNING DATES FROM 20001122 TO 20010129
|Sep 27, 2005
|Fee payment
Year of fee payment: 4
|Sep 22, 2009
|Fee payment
Year of fee payment: 8
|Nov 15, 2013
|Maintenance fee reminder mailed
|Apr 9, 2014
|Lapse for failure to pay maintenance fees
|May 27, 2014
|Expired due to failure to pay maintenance fee
Effective date: 20140409


text:
|Publication number
|Publication type
|Application number
|Publication date
|Oct 30, 1984
|Filing date
|Sep 14, 1983
|Priority date
|Sep 14, 1983
|Fee status
|Publication number
|William M. Dranginis
|Original Assignee
|Dranginis William M
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (12), Referenced by (17), Classifications (15), Legal Events (3)
|External Links: USPTO, USPTO Assignment, Espacenet
The present trend in automotive design places great emphasis on streamlining to lessen wind resistance in order to improve fuel economy and reduce wind noise. The very latest vehicles reflect this trend in such details as redesigned or eliminated window and body moldings, flush or recessed door handles and relatively flat wheel covers.
In spite of these improvements, most automobiles continue to have fixed headlights whose lenses are vertical or substantially vertical and usually the headlights are recessed into the front quarter panels of the vehicle, making deep pockets which capture the wind and offer maximum resistance to air flow. Automotive disigners are well aware of this serious defect which mitigates against their current efforts to produce vehicle bodies which are "slippery" in relation to the air flowing over them. There simply has been no economically satisfactory or practical solution to the headlight problem, particularly on the less expensive high production models of automobiles.
As a result, the problem has been largely ignored except on a relatively few higher priced automobiles where power-operated tiltable headlights have been devised which are moved between inclined non-use or daylight positions to vertical use or nighttime positions. Such movable headlights require separate motors to operate and are therefore very expensive. They accomplish the purpose of reducing wind resistance only when in the inclined non-use position, and not when in the upright use position.
In other cases, deeply recessed headlights having vertical lenses are used in conjunction with long fixed auxiliary lenses which are formed to match the contours of the streamlined body front quarter panels. These long inclined auxiliary lenses are not only costly but tend to introduce optical problems into the illumination system including problems of reflection and refraction of light delivered by the headlights.
With all of the above in view, the present invention has for its objective the provision of headlights for automotive vehicles which, by the use of economical and practical means, can be built into the vehicle body in fixed positions whereby the lenses of the headlights are substantially flush with and parallel to the adjacent inclined and streamlined body surfaces so as to assist in implementing the overall "slipperiness" of the body design, and not create excessive wind resistance as now occurs with conventional headlights.
A further and more specific object of the invention is to provide a vehicle headlight of the above type and for the above purpose having a built-in light ray deflecting means whereby the light produced by the headlight is properly directed on the roadway in accordance with legal requirements governing pattern and intensity of illumination even when the optical axis of the headlight is steeply inclined from the usual nearly horizontal axis of conventional headlights.
Another object of the invention is to provide a fixed position headlight for streamlined vehicles having a large range of usefulness, in relation to the rather wide variations in the degrees of slope on the hoods and quarter panels of some modern-day vehicles.
Still another object is to provide a fixed position headlight for streamlined vehicles possessing built-in light beam deflection means in the form of a plurality of opaque slats having light reflecting surfaces.
Other features and advantages of the invention will become apparent to those skilled in the art during the course of the following description.
FIGS. 1 and 2 are perspective views of headlights for streamlined vehicles according to the prior art.
FIG. 3 is a fragmentary side elevation of a headlight for a streamlined vehicle according to the invention.
FIG. 4 is an enlarged central vertical section through the headlight shown in FIG. 3.
FIG. 5 is an enlarged transverse vertical section through a reflective slat.
FIG. 6 is an elevational view of the headlight according to the invention taken on line 6--6 of FIG. 4, partly broken away.
FIG. 7 is a fragmentary section taken on line 7--7 of FIG. 6.
FIG. 8 is a fragmentary section similar to FIG. 4 showing a modification.
FIG. 9 is a perspective view, partly broken away and partly in section, of a headlight reflecting unit according to a second modification of the invention.
Referring to the drawings in detail wherein like numerals designate like parts, FIGS. 1 and 2 show two examples of prior art headlights for streamlined vehicles, both of which arrangements are costly. In FIG. 1, headlights 20 having vertical lenses are deeply recessed into vehicle front quarter panels 21. Long forwardly tapering fixed clear auxiliary lenses 22 are placed forwardly of the headlights within notches provided in the front quarter panels 21. The auxiliary lenses 22 conform to the hood and quarter panel configurations of the streamlined vehicle body but are costly and introduce optical error in the light beams delivered by the headlights 20.
FIG. 2, also showing the prior art, contains motor driven headlights 23 which are shown in their operating positions with their lenses vertically disposed and projecting above the vehicle hood and quarter panels, where they offer serious wind resistance. The lights 23, when rotated downwardly to daytime non-use positions, blend nicely into the streamlined contour of the vehicle body. A separate drive motor is required for each headlight 23, and therefore the arrangement is very costly. It also fails to completely solve the problem, as noted above. There are a number of similar prior art arrangements which do not completely solve the problem of headlight wind resistance in a practical and satisfactory manner, as does the present invention.
The invention as shown in FIGS. 3 to 9, comprises placing a fixed headlight 24 according to the invention in a provided well in each front quarter panel 25 of the vehicle. As shown in FIG. 3, the degree of taper at the front of the vehicle body can be quite pronounced, such as 30� or less below the horizontal. The degree of taper or streamlining of the vehicle will vary from make-to-make and model-to-model. The headlight according to the invention has a range of usefulness in this connection of approximately 20� to 50�, referring to the angle of slope of the hood and quarter panels below the horizontal.
The headlight 24 is fixed to the customary support bracket means, not shown, at an elevation below the hood and quarter panel line of the vehicle body. The details of this bracket structure will also vary from make-to-make of automotive vehicle. As is well known, the support bracket structure includes means for aiming or adjusting the headlight beam angle, as required by law, to a small angle below the horizontal, such as 21/2� as indicated in FIG. 4.
The headlight 24, as shown in the drawings, is a standard rectangular headlights having a front substantially flat rectangular lens 26 preferably formed of an optically clear plastics material. The lens has customary ribbing or other protrusions on its front portion to create the required illumination pattern and distribution. This forms no part of the invention.
The lens 26 has comparatively short side wall portions 27 around its four sides whose edges abut and are fixed, preferably by adhesive means, to a narrow marginal flange 28 on the forward end of a headlight reflector 29 having a parabolic rear portion 30.
The illustrated headlight 24 is a halogen headlight containing a replaceable halogen light bulb 31 held by a releasable holder or bracket 32 of conventional construction at the rear of the headlight reflector. The invention is also applicable to incandescent headlights having removable or sealed beam light sources, and the invention is applicable to sealed beam halogen headlights. In fact, the invention is not dependent on any particular illumination source, and is fully compatible with all known types of modern-day headlights.
As shown in FIGS. 3 and 4, the headlight 24 is fixedly mounted with its optical axis essentially normal to the slope line of the vehicle hood and front quarter panels, which slope will vary in degree from vehicle-to-vehicle, as explained previously.
The essence of the invention resides in a built-in fixed angle light beam deflector or reflecting system, shown in a preferred form in FIGS. 3 through 7. In these figures, a plurality of equidistantly spaced parallel opaque reflecting strips 33, preferably formed of plastics material, are held fixedly in grooves 34 formed in a pair of spaced parallel side support bars 35 disposed near and inwardly of the opposite side wall portions 27 of the lens 26. The reflecting strips 33 can be held in the grooves 34 snugly, as by friction, and if preferred, may be held therein by adhesive means. The rear longitudinal edges 36 of the bars 35 extend rearwardly of the strips 33 and terminate at the marginal flange 28. As best shown in FIG. 6, the opposite ends of the bars 35 rest on corner areas of the reflector 29, outwardly of its curved side wall portions 37. As best shown in FIG. 7, the reflecting assembly composed of the support bars 35 and reflecting strips 33 is held in place snugly in sandwhiched relationship between the four corners of lens 26 and the opposing corner areas of the reflector 29. No additional fastening means for the reflecting system is required, and the system is permanently locked in place within the headlight.
The strips 33 are all positioned at the required angle to the optical axis of the headlight 24 to cause the light beam L generated by the headlight to be directed forwardly of the vehicle in the proper direction and with the required intensity of illumination and continuity to meet State and Federal requirements. The angle of mounting of the reflecting strips 33 will therefore be varied from make-to-make and model-to-model of vehicle, depending upon the degree of slope of its hood and front quarter panels.
The arrangement depicted in FIGS. 3 and 4 is for a vehicle whose hood and quarter panels are inclined approximately 30� below the horizontal. The reflective lower surfaces 38 of the strips 33 formed by a reflective coating are disposed at a similar angle of approximately 30� to the optical axis of the fixed headlight 24.
The frontal edges 39 of the reflecting strips 33 are all beveled in parallel relationship on an angle which is parallel to the desired angle of the light beam L, FIG. 4. The spacing of the strips 33, their angles, their front-to-back widths and their beveled edges 39 all cooperate to cause light reflected forwardly by the parabolic reflector 30 to be again reflected by the lower surfaces 38 of strips 33 to produce the required light beam L. A portion of the headlight beam is reflected forwardly through the slit or space defined between the parallel bevelled edges 39 of each adjacent pair of opaque strips 33. The rear faces 40 of these strips are colored to match the color of the vehicle paint or, in other cases, are made black. When the strips 33 are formed of plastics material, they can be pigmented as desired. The reflective coating for the strip faces 38 is conventional.
Once the headlight 24 is installed and properly adjusted in its mounting bracket means, it normally requires no further attention and functions like a conventional fixed headlight in spite of the fact that its optical axis is substantially normal to the sloping quarter panels and hood of the vehicle. The arrangement imparts the desired streamlining to the vehicle body at the two headlight areas while furnishing the required roadway illumination. No moving parts are involved and no elongated auxiliary lenses of the type shown in FIG. 1 are present. The advantage of the arrangement should be readily apparent to those skilled in the art. The beveled edges 39 preferably project somewhat forwardly of the leading edges of the two bars 35 as shown in FIG. 4 and are spaced slightly rearwardly of the frontal portion of lens 26.
In a modified form of the invention shown in FIG. 8, the spaced light reflecting strips or slats 33a are beveled at 41 on their inner longitudinal edges as well as at 39 on their leading edges, as previously described. The beveled edges 41 are parallel to each other and parallel to the optical axis of the headlight. A greater passageway for light L' parallel to the axis of the headlight is provided, although a greater number of the strips 33a is necessary. In all other respects, the headlight in FIG. 8 is constructed and operates in the same manner described in the preceding embodiment.
FIG. 9 depicts another embodiment of the light deflecting means for a fixed inclined axis headlight on a streamlined automobile. In lieu of the assembly including plural strips 33 held in slots of the support bars 35, a molded unitized optical plastics light deflector 42 is provided for placement between the headlight lens 26 and corner areas of the light reflector 29, as previously described, without any additional fastener means. The deflector unit 42 includes a marginal rectangular frame 43 within which are held in parallel equidistantly spaced relationship inclined strips or slats 44 corresponding to the strips 33 and having light reflecting coating on their corresponding lower faces 45. The slats 44 are joined integrally by webs 46 which are light transmitting, and whose faces 47 are perpendicular to the light rays reflected by the surfaces 45. The inner edges of the slats or strips 45 are beveled at 48, corresponding to the previously-described beveled edges 41. The slat surfaces 49 below the webs 47 are either colored black or are colored to match the paint of the automotive vehicle. These surfaces are opaque.
The deflector unit 42 of FIG. 9 functions in the headlight in the identical manner described with respect to the prior embodiments. The advantage inherent in the unit 42 is that the necessity for assembling the several strips or slats 33 with the support bars 35 is obviated.
The terms and expressions which have been employed herein are used as terms of description and not of limitation, and there is no intention, in the use of such terms and expressions, of excluding any equivalents of the features shown and described or portions thereof but it is recognized that various modifications are possible within the scope of the inention claimed.
|Cited Patent
|Filing date
|Publication date
|Aug 12, 1920
|Jun 5, 1923
|Lewis A W Johnson
|Jan 17, 1923
|Aug 31, 1926
|William H Schoonmaker
|Automobile headlight
|Aug 11, 1934
|Dec 29, 1936
|William F Lennon
|Aug 15, 1935
|Dec 21, 1937
|Harry D Van Leunen
|Illuminating device
|Feb 17, 1937
|May 31, 1938
|Ladden Corp Van
|Light control means for headlights and the like
|Dec 26, 1963
|Sep 27, 1966
|Joseph M Szarkowski
|Illuminating system
|Aug 20, 1968
|Sep 14, 1971
|John F Steel
|Automobile headlamp
|Nov 11, 1971
|May 29, 1973
|A Goodwin
|Lighting systems for road vehicles
|Feb 6, 1976
|Sep 20, 1977
|Board Of Trustees Western Washington State College
|Automotive vehicle
|Aug 2, 1978
|Dec 23, 1980
|Eastman Kodak Company
|Light deflector for use in illumination apparatus
|Jun 30, 1980
|May 10, 1983
|Itt Industries Inc.
|Signal lamp
|Title not available
|Citing Patent
|Filing date
|Publication date
|Oct 6, 1986
|Nov 3, 1987
|Ploeger Gregory L
|Contoured headlight concealment lens
|May 13, 1985
|Jan 26, 1988
|Koito Seisakusho Co., Ltd.
|Lamp assembly for emitting a beam of light at an angle to its optical axis
|Sep 22, 1992
|Apr 12, 1994
|Meir Sprecher
|Reduced-glare headlights
|Dec 9, 1992
|Jul 19, 1994
|Valeo Vision
|Motor vehicle headlamp fitted with improved fixing means
|May 16, 2003
|Mar 29, 2005
|Stanley Electric Co., Ltd.
|Vehicle lamp with visor
|May 8, 2001
|Nov 29, 2005
|Genlyte Thomas Group Llc
|Fully recessed unit equipment luminaire
|Nov 12, 2003
|Mar 27, 2007
|Schefenacker Vision Systems Germany Gmbh & Co. Kg
|Vehicle light for a vehicle, preferably a motor vehicle
|May 8, 2006
|Sep 4, 2007
|Visteon Global Technologies, Inc.
|Reduced depth projector headlamp assembly
|Dec 2, 2003
|May 19, 2009
|Daimler Ag
|LED headlight for a motor vehicle
|Mar 31, 2006
|Feb 22, 2011
|Turhan Alcelik
|Headlamp with long-distance illumination without glaring effect
|May 16, 2003
|Feb 5, 2004
|Stanley Electric Co., Ltd.
|Vehicle lamp with visor
|Nov 12, 2003
|Aug 19, 2004
|Schefenacker Vision Systems Germany Gmbh + Co. Kg
|Vehicle light for a vehicle, preferably a motor vehicle
|Dec 2, 2003
|Jul 27, 2006
|Joerg Moisel
|Led headlight for a motor vehicle
|Apr 21, 2006
|Oct 25, 2007
|Villard Russell G
|Light Emitting Diode Packages
|Mar 31, 2006
|Jul 31, 2008
|Turhan Alcelik
|Headlamp With Long-Distance Illumination Without Glaring Effect
|Dec 26, 2013
|Mar 26, 2014
|Grid plate strip type light-filtering anti-dazzling vehicle lamp
|Nov 18, 2005
|May 24, 2006
|Ansorg GmbH
|Lamp, in particular recessed directional projector, for mounting in a cavity
|U.S. Classification
|362/517, 362/365, 362/342, 362/506, 362/279, 362/290
|International Classification
|Cooperative Classification
|European Classification
|May 31, 1988
|Maintenance fee reminder mailed
|Oct 30, 1988
|Lapse for failure to pay maintenance fees
|Jan 17, 1989
|Expired due to failure to pay maintenance fee
Effective date: 19881030


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The average salary of a(n) Human Resources Assistant in Cape Coral, Florida is $39,675.
The average hourly rate of a(n) Human Resources Assistant in Cape Coral, Florida is $19.07.
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Set up and maintain all new hire paperwork and Team Member files by following "R" Us family guidelines as well as maintaining confidentiality of these items....View job on Indeed.com


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4 Comments
Realtime comments disabled
Harrawood27u 2022 days ago
mmj0 Hi take a look at Look013.com
570091D 2024 days ago
evga's own dual-gpu card? GTX590 Classified?
we going to see more at CES?
frosthoe 2025 days ago
Was wondering when the dual Gpu fermis would finaly be out
Excited that this is coming, mad that I cant get one, Bleh.
Z999z3mystorys 2025 days ago
single SLI link, triple fans, triple DVI-D, this has to be a dual GPU card! GTX 590 maybe?


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Ten weeks of the baseball season are in the books. Ten weeks! The craziness at the top of our Player Rater is remarkable being over 2 months into the season. Xander Bogaerts is 4th, Ian Kinsler is 5th (!), Ian Desmond, Robinson Cano and David Ortiz round out the top 10, and Mark Trumbo, Daniel Murphy and Jonathan Villar are all in the top 20. Before the season, I would have guessed Bogaerts is the only guy on this list who could get to the top 20 this year but I wouldn't have bet on it happening. Does that mean I'd sell high on the rest of them? Not necessarily. I'd hold onto Desmond and Villar at this point for what they're giving at the top of their lineups. The problem is when you're in a league with smart players like RCLs, you can't sell high on these guys so just hold them and hope for the best; they're still be getting predraft value with inevitable regression. But in other leagues with inexperienced people? Try to sell high on these guys before the bottom falls out. Here's a recap of everything that's been posted on Razzball over the last week:Please, blog, may I have some more?
Danny Duffy
Wikipedia says groupthink is, "A psychological phenomenon that occurs within a group of people in which the desire for harmony or conformity in the group results in an irrational or dysfunctional decision-making outcome. Group members try to minimize conflict and reach a consensus decision without critical evaluation of alternative viewpoints by actively suppressing dissenting viewpoints, and by isolating themselves from outside influences. Now spend forty minutes randomly popping around the internet until you somehow end up on an exercise video of Morgan Fairchild." I'm sure someone has already done this, but you know how there's Six Degrees of Kevin Bacon? Why isn't there an internet six degrees to tepid porn? No matter where you are, you are six clicks from tepid porn. Any hoo! I was thinking about groupthink because of the comments on this site, but it's more like groupspeak. Just listen to what the groupspeak say. Sometimes you get comments that can be helpful, even if they're not intentionally trying to be helpful. If you see ten to twenty random comments asking about Danny Duffy, a pattern emerges. A beautiful snowflake pattern because every comment is different unless it's a catcher question. With that many people asking about Duffy, there might be something there. So, I looked at his stats, and, J. Lo and behold, his peripherals are gorge. In 43 IP, he has a 10.3 K/9, 1.5 BB/9 and a 3.52 xFIP. He's there with a 95.7 MPH fastball and a change that is buckling hitters. These are not waiver wire pitcher peripherals. These are ace pitcher numbers. I'd go pick him up right now…Which should only take you three clicks, so you have three more clicks to find Morgan Fairchild doing crunches. Enjoy (or be careful)! Anyway, here's some more players to Buy or Sell this week in fantasy baseball:Please, blog, may I have some more?
We have a compact slate of only ten games today, but there's a whole lot of lefty action going on, so let's see who we can expose to cash in on some DK dolla billz. Jon Lester, $11,600 seems like the obvious choice against a weak Philly offense, but he hasn't been the K machine on the road that he has been at home. At home he's been beasting out, as opponents are hitting a mere .186 with 55 Ks in 48 IP and on the road they're hitting .271 with only 14 Ks in 22 IP. Granted it's a very small sample size, but it is something to think about going into a hitters park. I may not be feeling Lester today, but I am One Hunnit on a Cubbies stack vs lefty Adam Morgan. Steven Matz, is another LH stud going tonight against Pit and as good as he's been I'm hesitant endorsing him as well because of the matchup. Pit has been swinging it against LHP, ranking in the top 5 at a .267/.445/.787 clip. With JDong Jr (Jung Ho Kang) back along with Marte, Cutch, Freese and Mercer, I think Matz it's going to have a rough night. Now that I've negged you out on the top two starters for tonight who should you roster?
New to DraftKings? Scared of feeling like a small fish in a big pond? Well reserve your spot in the 25 Team Razzball Exclusive League set to run today to wet your DK whistle. Just remember to sign up through us before you do. It's how we know you care! If you still feel helpless and lonely, be sure to subscribe to the DFSBot for your daily baseball playsPlease, blog, may I have some more?
Felix Hernandez hit the DL with a calf strain. He could veal it during his last start. Sounds like a good injury to milk. Sorry, I was just shaking out the pockets of these jeans I wore last night and I had a bunch of unused cow puns. What's a dad cow's poop called? Pa-nure! Take it, Highlights, it's yours! So, James Paxton was called up to replace F-Her, who is likely going to only miss a few weeks, but Paxton could continue to get starts if he's good. So, can Paxton be good? Is there's twelve posts in post-post-post-post-post-post-post-post-post-post-post-post-hype sleeper? Paxton has shown flashes of brilliance with his 94 MPH fastball but the M's have wanted Paxton to improve on a bunch of pitches and he's already 27 years old, so is improvement coming? Well, he had a 3.97 ERA in Triple-A this year and Steamer projects him as a streamer, so I have no faith whatsoever. Speaking of faith, yesterday Paxton gave up runs like his character gave out marriage proposals. Looking at his line is like looking at Chloe Sevigny — 3 2/3 IP, 3 ER, 5 unearned runs. Paxton's like when Picasso stood up from the toilet. He'd look down and say, "That's a work in progress." Anyway, here's what else I saw yesterday in fantasy baseball:Please, blog, may I have some more?
I live in La La land, aka Hollywood, aka the Land of a Fake Faces…and Butts…and Thighs…and Breasteses. Hey, I don't mind. I'm all for "self-improvement." I liken it to the PED era of MLB. Pitchers were throwing 100 mph and batters were launching home runs 500 feet. As a Dodger fan, I will always remember the electricity when Eric Gagne would come in to close games. It was a hilariously entertaining time. Chicks dig the long ball. Well, guys dig…butts, thighs, and breasteses. For you purists out there, I give you Neil DeGrasse Tyson, who says that there's a very high chance we're living in the Matrix. I'll admit, that there are times I want to know the truth and will take the red pill. On the other hand, sometimes I just want enjoyment, so I'll take the blue pill. Anyways, before I went on that PED-induced tangent, I wanted to talk about the movie-making aspect of Hollywood. If a movie is successful, you can be sure that a sequel is coming. A trilogy more than likely, and a remake in 25 years or so. Which brings me to…Please, blog, may I have some more?
This is the start of a new series called Deep Impact. Having played in deep fantasy baseball leagues before, I know it is often tough to keep reading the same articles about the same guys to pick up that have been owned forever in your league. I will try to ease that pain and give you some ideas of guys to pick up. Obviously, this is easier said than done; the realm of "deep leagues" is far reaching and can mean almost anything. Between looking at guys that are available in a few of my deeper leagues and just trying to use some intuition to find some obviously undervalued players, hopefully we can work together to help you unearth some hidden gems.
The first section of this post will focus on a few players who are good adds in deep redraft leagues, or leagues with a small keeper number. Dynasty leagues are a whole different beast, but in any deep league where there is a lot of roster turnover year to year, you'll want to get the most possible production in the here and now. Without further ado, let's begin!Please, blog, may I have some more?
Welcome to the 2016 Razzball Team Previews! You'll find everything you need to know about each team to get yourself ready for the upcoming fantasy baseball season. And I mean everything, folks. We've got line-ups, charts, Slurpees, lube, a guide for beginner electricians, and even a cactus! Well, that's a lie. That's what Jay had last year sitting in front of him. This year? Um…a little less lube? Take that as you will. But hey, we've got teams to preview and questions to ask, so let's hop to it. We a very special guest for this post…Max Rieper, to provide his take on what the team has in store this season. Now enough rambling, let's see what 2016 holds for the Kansas City Royals!Please, blog, may I have some more?
If I told you this post ends our position 2016 fantasy baseball rankings, would you believe me? What if I told you it while holding your mom's hand while calling you son, would you believe it more or less? Man, you got issues! So, yes, this is the end of our positional rankings, but I'll be along tomorrow with a top 100 and then a top 500. That's right, 500! Like a baller! There's also our Steamer projections for all hitters and pitchers. All of the fantasy baseball auction values are also up for over 1500 players. There's a ton of different formats located there too, like the 5×5 OBP rankings, 6×6 OBP rankings, 6×6 Holds and a ton more. All of my 2016 fantasy baseball rankings are there. My tiers and projections are noted in this post. Anyway, here's the top 100 starters for 2016 fantasy baseball:Please, blog, may I have some more?
All right all of you, hardcore, prematurely balding fantasy baseballers, who are battling in the trenches these final weeks. You people. And by "you people," I mean middle-aged, middle class white men with their mothers on speed dial. (What? Google Analytics can tell a lot.) Let's do this like Brutus and Tommy Artootis. (I went to middle school with Tommy Artootis; you probably didn't know that.) Yesterday, Kendrys Morales went 4-for-4, 5 runs and three solo home runs (19, 20, 21). The Morales of the story? He's stepping up to help you win because we prayed for this. Right after praying that Lay's Gyro-flavored potato chips wins the new flavor contest. Show of hands: how many of you care who becomes the next president? Okay, now how many of you care what flavor wins Lay's potato chip contest? Ya'll bunch of liars if you didn't vote for Lay's. Can we just make a Trump flavored potato chip to combine all my voting into one place? Morales has done well for my Tout Wars team, but I'm gonna come up a little short like Altuve. Here's the current standings, as you can see power was my real bugaboo. If Miggy had reached 30 homers like he did seemingly every other year, it could've made a huge difference. For now, let's bask in Rudy's dominance and hope Lay's Gyro flavor kicks ass. Anyway, here's what else I saw this weekend in fantasy baseball:Please, blog, may I have some more?
Yesterday, Chris Coghlan went full Ivan Drago on Jung-ho Kang's knee, taking him out in a hard slide. Kang is now done for the year, and could miss a month of next season, with a torn MCL. That's not the year 1150, if any Romans are reading this. He also has a fractured fibia. Coghlan should not be allowed to wear that Iron Mike Sharpe knee pad. Things couldn't be much worse for the Pirates, who will now rely on Jordache Mercer (full name). Kang's agent said, "It is unfortunate that what would be considered heads up baseball would cause such a serious injury. That said, Coghlan was playing the game the way it should be played." Doesn't that sound backhanded? Like, "It's a shame we allow 85-year-old people to drive, but that's the law and thanks for crashing into my car." Anyway, here's what else I saw yesterday in fantasy baseball:Please, blog, may I have some more?


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Most Recent Articles In Fashion Scoops
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MIAMI LANDING: Emilio Pucci continues to invest in its retail network and has opened a 1,728-square-foot boutique in Miami's Design District, which follows the unveiling of a Manhattan flagship in November. This is the brand's third location in Southern Florida.
"Florida has historically been a strategic market for us, so we're especially happy to have such a unique store in this very singular neighborhood," said Emilio Pucci president and chief executive officer Alessandra Carra. "The new opening is an important step in the development of our business in the U.S." In the region, the company has six monobrand boutiques and the brand is carried at Bergdorf Goodman, Neiman Marcus, Saks Fifth Avenue and Nordstrom, as well as a large number of high-end specialty stores.
This story first appeared in the June 14, 2013 issue of WWD. Subscribe Today.
Art Deco-era pastel and tropical hues evocative of Pucci's prints stand out on furnishings and decor in the new venue. Brass "totems" spelling Pucci — an homage to props the namesake founder of the brand used in one of his first fashion shows — mark the store, as well as high-gloss brass fixtures and distinctive, purple-veined Breccia dei Medici marble reminiscent of Palazzo Pucci in Florence.
RELATED STORY: Emilio Pucci Resort 2014 >>


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'Downton Abbey' Star Lily James to Become 'Cinderella'
Director Kenneth Branagh's search for his Cinderella is over as he taps rising star Lily James to be the Disney princess. Disney has announced that the English actress, whose credits include "Wrath of the Titans" and "Downton Abbey", will be joining Award-winning actress Cate Blanchett in the upcoming film.
James is replacing "The Bling Ring" actress Emma Watson, who was previously attached to the project, but decided to exit the project earlier this year. Following Watson's departure, several big names were rumored to be considered for the title role, including Saoirse Ronan, Alicia Vikander, Margot Robbie and Bella Heathcote.
Additionally, the film was intended to be helmed by Mark Romanek, who served behind the lens for 2002's "One Hour Photo" and 2010's "Never Let Me Go". However, due to creative differences, Romanek left the project, which then saw the arrival of Branagh, who directed "Thor" and "My Week with Marilyn", as its new director.
Blanchett is tapped to play Cinderella's evil stepmother in the new Disney adaptation, which is penned by "The Devil Wears Prada" scribe Aline Brosh McKenna. Serving as the producers are Allison Shearmur, David Barron and Simon Kinberg. The film is reportedly due out next year.
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