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|By PR Newswire
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|March 17, 2014 12:01 AM EDT
ST. LOUIS, March 17, 2014 /PRNewswire/ -- Demonstrating its ongoing commitment to small businesses, AT&T1 (NYSE: T) is offering its best-ever value for wired and wireless communications bundles. With the new plan, companies located in AT&T's U-verse service areas in Missouri can save up to $420 over the next year, including those in the following markets and their surrounding areas: St. Louis, Kansas City, Cape Girardeau, Moberly, Mexico, Springfield, St. Joseph, Joplin, Kirksville, Poplar Bluff, and Hannibal.2
Specifically, AT&T is offering up to 12 months of free AT&T U-verse® High Speed Internet – Business Edition up to 6Mbp service3 to small businesses in Missouri that fall within the following categories:
- Are new AT&T wireless business customers adding Mobile Share Value 10GB or higher plans; or
- Are existing AT&T mobility business customers migrating to AT&T Mobile Share Value 10GB or higher plans; or
- Are existing business customers on Mobile Share Value 10GB or higher plans.
The free AT&T U-verse High Speed Internet service includes download speeds of up to 6Mbps only. If small businesses choose AT&T U-verse download speeds faster than 6Mbps, they will be provided a monthly credit of $35 for up to12 months or up to $420 per year.4 See below.
Download speed
Price per Month
(After $35 monthly discount applied)
Up to 6Mbps
"With this new offer we're providing a one-two punch – best-ever value on Mobile Share Value plans, coupled with free AT&T U-verse High Speed Internet," said John Sondag, president of AT&T Missouri. "Our customers can enjoy significant savings and, at the same time, access key wired and wireless technologies that will help take their business to the next level."
Today's announcement further extends the benefits of activation on a qualified Mobile Share Value plan for small businesses, which already include unlimited talk and text in the United States for phones and other recently announced features, including unlimited international messaging (text, picture and video) from the US.5
In addition, Mobile Share Value customers can sign up for AT&T Locker 50GB of free cloud storage.6 With 50GB of free cloud storage from AT&T, small businesses can store large files, documents, photos and videos, and access them across multiple devices.
Monthly data allotment costs for Mobile Share Value plans, which vary by data tier, range from $20 for 300 MB up to $375 for 50GB. Business can add up to 10 devices for plans with 20 GB or less, 15 devices for the 30 GB plan; up to 20 devices for the 40 GB plan; and up to 25 devices for the 50 GB plan.7
Small business customers can learn more about or purchase the new Mobile Share Value-free U-verse High Speed Internet offer by calling 855-877-4288, or visiting a local AT&T-owned store. In addition, they can get more information at www.att.com/bizinternetoffer. The promotional offer runs through Wednesday, April 30.
To determine if they are located in AT&T's U-verse High Speed Internet service footprint – and, therefore, qualify for free U-verse High Speed Internet– small businesses can call 855-877-4288, visit an AT&T-owned store, or go to the online tool at www.att.com/u-verse/availability.
For small businesses considering AT&T U-verse High Speed Internet, there a number of other features inherent in the service in addition to high speed internet access. They include:
- Free installation
- Modem and router/gateway rebates8
- Free access to AT&T Wi-Fi Basic giving you access to thousands of hotspots nationwide
- A subscription to AT&T Internet Security Suite powered by McAfee® with anti-spyware, anti-virus and firewall included
- Standard email with 2GB of storage and 10 additional email boxes
- 24-hour repair guarantee
Business customers can learn more about the Mobile Share Value plans and determine which plan is best for them at att.com/bizmobileshare.
1AT&T products and services are provided or offered by subsidiaries and affiliates of AT&T Inc. under the AT&T brand and not by AT&T Inc.
2 Savings calculated based on $35 bill credit for 12 months. Geographic and service restrictions apply to AT&T U-verse services. Call or go to www.att.com/u-verse to see if you qualify. To define a market, we rely on the Core Based Statistical Areas (CBSA), as established by the United States Office of Management and Budget. Minor differences, if any, between annual totals reflect annual updating of market boundaries in our record systems.
3 Free Internet Offer: New AT&T U-verse High Speed Internet limited to 768k up to 6Mbps (where available) with no MRC for 1 year; requires acceptance of standard terms for AT&T U-verse High Speed Internet; dynamic IP provisioning only (additional charge for static IP); standard charges for CPE apply (subject to rebate for qualifying customers); tax and additional surcharges apply; standard charges, taxes and surcharges apply following 1 year of service. Offer may not be combined with $150 New Broadband Reward Card offer. Available to new and existing business customers with a qualified AT&T service agreement ("Business Agreement") with Corporate Responsibility Users on a Mobile Share Value plan of 10GB or higher. Offer not available to consumers/Individual Responsibility Users. Higher Internet speeds available at reduced rates. Limit 1 Free/Discounted qualifying AT&T U-verse High Speed Internet line per each qualifying Mobile Share Value Plan of 10 GB or higher.
Migrations from DSL: Migrations from DSL to AT&T U-verse High Speed Internet eligible for the Free Internet Offer with qualifying Mobile Share Value Plan and limited to 768k up to 6Mbps (where available) with no MRC for 1 year; For migrations from DSL, the following conditions apply: requires acceptance of standard terms for AT&T U-verse High Speed Internet; dynamic IP provisioning only (additional charge for static IP); standard charges for CPE apply (subject to CPE waiver for qualifying customers); tax and additional surcharges apply; standard charges, taxes and surcharges apply following 1 year of service. Offer may not be combined with $100 IP Migration Reward Card offer. Available to new and existing business customers with a qualified AT&T service agreement ("Business Agreement") with Corporate Responsibility Users on a Mobile Share Value plan of 10GB or higher. Offer not available to consumers/Individual Responsibility Users. Higher Internet speeds available at reduced rates. Limit 1 Free/Discounted qualifying AT&T U-verse High Speed Internet line per each qualifying Mobile Share Value Plan of 10 GB or higher.
Free Internet Offer subject to change at any time. To continue to receive the Free Internet Offer, customer must maintain the Qualified Mobile Share Plan and remain in good standing for the promotional period. Geographic and service restrictions apply to AT&T U-verse. Call or go to www.att.com/uverse to see if you qualify.
4 The U-verse service will revert to term rates at the end of the first year of service, and the term rates are subject to change
5 Unlimited International Messaging: Includes unlimited messaging from the U.S., Puerto Rico and the U.S. Virgin Islands to select countries. Messaging capabilities vary by country. AT&T may change countries at its discretion. Visit att.com/text2world for details. Messaging: Messages are for direct communication between phones and must originate from your phone. Messages sent to tablets, laptops, or other connected devices are excluded. Messages sent through applications may incur data charges. Service may be terminated or restricted for tethered messaging or misuse.
6 50GB storage is available by logging into AT&T Locker, selecting Account and My Plan and then tap the "upgrade" option. Usage of AT&T Locker may incur data charges. Standard data rates apply. Storage limits subject to change/discontinuation. For terms, see att.com/wirelesslegal.
7 Additional monthly charges apply per device which vary by data tier and device type.
8 Offer Equipment Rebate: Not available for migrations from DSL. Modem or Router rebate available with new purchase of AT&T U-verse High Speed Internet Business Edition and a minimum 12 month commitment. Information about the AT&T Business Reward Center and online rebate redemption will be sent by mail to the Customer's address after the Customer's order of AT&T U-verse High Speed Internet Business Edition has been received and maintained in service for at least 60 calendar days. Customers must complete the online rebate redemption process within 90 calendar days of AT&T U-verse High Speed Internet Business Edition service activation. The equipment rebate offer is valid in the following states: AR, CA, CT, IL, IN, KS, MI, MO, NV, OH, OK, TX, WI, AL, FL, GA, KY, LA, MS, NC, SC, TN. Rebate void where prohibited, taxed or restricted by law. Rebate may not be assigned, transferred or sold. AT&T may provide refurbished modem or router. One equipment rebate allowed per AT&T U-verse High Speed Internet line. Account must be current and in service for a minimum of 60 calendar days to be eligible for rebate. Rebate cannot exceed total purchase price of equipment. Rebate check will be mailed to the customer's billing address within 6 weeks of completion of the online rebate redemption process provided the Customer has met the 60 calendar day minimum service requirement. AT&T is not responsible for late, lost, misdirected, or postage-due mail or mail damaged by the U.S. Post Office. Rebate is offered by AT&T Internet Services and cannot be applied to your AT&T local exchange carrier bill. Some customers may need to purchase additional equipment (for example: Ethernet card and/or cable) which will not be eligible for rebate. Geographic and service restrictions apply to U-verse services. Prices and offers subject to change without notice. Internet speed claim(s) represent maximum downstream and/or upstream speed capabilities. Speeds may vary and are not guaranteed. Many factors can affect actual speeds. Subject to change without notice.
About AT&T
AT&T Inc. (NYSE:T) is a premier communications holding company and one of the most honored companies in the world. Its subsidiaries and affiliates – AT&T operating companies – are the providers of AT&T services in the United States and internationally. With a powerful array of network resources that includes the nation's most reliable 4G LTE network, AT&T is a leading provider of wireless, Wi-Fi, high speed Internet, voice and cloud-based services. A leader in mobile Internet, AT&T also offers the best wireless coverage worldwide of any U.S. carrier, offering the most wireless phones that work in the most countries. It also offers advanced TV service with the AT&T U-verse® brand. The company's suite of IP-based business communications services is one of the most advanced in the world.
Additional information about AT&T Inc. and the products and services provided by AT&T subsidiaries and affiliates is available at http://www.att.com/aboutus or follow our news on Twitter at @ATT, on Facebook at http://www.facebook.com/att and YouTube at http://www.youtube.com/att.
© 2014 AT&T Intellectual Property. All rights reserved. AT&T, the AT&T logo and all other marks contained herein are trademarks of AT&T Intellectual Property and/or AT&T affiliated companies. All other marks contained herein are the property of their respective owners.
Reliability claim based on data transfer completion rates on nationwide 4G LTE networks. 4G LTE availability varies.
SOURCE AT&T Inc.
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633 search results for cia
State of Affairs - Upfront Clip
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Originally posted on Sox and Dawgs | Last updated 5/14/13
It looks former UConn Huskies RB Andre Dixon will get another chance to play professional football. This time around though it looks like it'll be north of the border in the Canadian Football League. Congratulations to Andre Dixon for signing with the BC Lions of the Canadian Football League.I am really happy... fb.me/1XiJZNrNW — Gino Caro (@GinoCaroSAID) May 15, 2013 Training camp begins for the BC Lions in two weeks and Dixon will get a chance to show his stuff. He'll compete with three other running backs for a chance to make the team. Dixon last played professionally in 2011 for the Sacramento Mountain Lions of the now defunct United Football League (UFL). Follow Ian on Twitter @soxanddawgs. And be sure to like us on Facebook as well. photo credit: getty images
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tax accountant jobs near Schaumburg, IL
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SWEET TOOTH: French tea salon Ladurée has tapped designer Alber Elbaz to art direct a special macaroon set. The box contains eight pink bubble gum-flavored macaroons, a flavor that the designer created with Ladurée pastry chef Vincent Lemains.
The collectable boxes are adorned with sketched faces of playful women and fastened with a grosgrain ribbon. The delicacies will go on sale on Sept. 25 in France, in time for Paris Fashion Week. The U.K, U.S and Japan will follow on Sept. 28.
Elbaz joins a long list of designers who collaborated with the French house: Tsumori Chisato, Christian Louboutin, John Galliano, Marni, Christian Lacroix, Alexis Mabille, Sonia Rykiel and Chantal Thomass.


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You are here > Home > Baseball Newsstand > Baseball Primer Newsblog > Discussion
Baseball Primer Newsblog
— The Best News Links from the Baseball Newsstand
Wednesday, January 30, 2013
Greenberg: Q&A: New Cubs 'saberist' Tom Tango
Saberist: The Mark of Tango!
Repoz Posted: January 30, 2013 at 05:18 PM | 16 comment(s) Login to Bookmark
Tags: cubs, sabermetrics
Reader Comments and Retorts
Statements posted here are those of our readers and do not represent the BaseballThinkFactory. Names are provided by the poster and are not verified. We ask that posters follow our submission policy. Please report any inappropriate comments.1. Meatwad Posted: January 30, 2013 at 06:11 PM (#4358597)
Agreed, that routine double play should have happened but alas it didnt2. Transmission Posted: January 30, 2013 at 07:14 PM (#4358653)
More than nine years later, it still pains me to read about that.3. villageidiom Posted: January 30, 2013 at 08:42 PM (#4358693)
More than nine years later, it still pains me to read about that.God, The Cubs, and Marty McFly
He's still got a secret identity? Sheesh.5. madvillain Posted: January 30, 2013 at 09:32 PM (#4358709)
Tango was one of the first guys that I read when I was getting into sabermetrics. His explanation of linear weights for batting outcomes was a revelation for me and it opened up an entire new way of thinking about the game. I just wish I had the brain I have now about baseball when I was playing in HS and low-level college. I would have been a lot freaking better.6. SoSH U at work Posted: January 30, 2013 at 09:37 PM (#4358710)
Congrats to Tango, whatever his real name is.
I just wish I had the brain I have now about baseball when I was playing in HS and low-level college.
I was a James disciple when I played in high school and college. I can't say it did much for my performance (though my teammates found it perplexing, and a bit amusing, when I'd rail against the strategies employed by my coaches).
You know, when I introduced Leverage Index to a larger audience, I did it the day after Game 6.I thought he did it in December after teh Bartman game. And he did it here.
I read about this somewhere. If only I could remember where...9. Famous Original Joe C Posted: January 31, 2013 at 10:21 AM (#4358941)
Congrats to Tango, whatever his real name is.
Tom Tango (unless he writes under a psuedonym).
His real name is Tiger Wang. He used "Tango Tiger" as a pseudonym and now he's switched again. His parents in Hong Kong are outraged.11. zack Posted: January 31, 2013 at 10:59 AM (#4358978)
Tom Tango is a pseudonym, yes. Either the publishers or he (can't recall) wanted a more name-y name for the cover of The Book.12. Slivers of Maranville descends into chaos (SdeB) Posted: January 31, 2013 at 11:03 AM (#4358983)
On the cover it's actually Tom M. Tango.
Tango is actually Tiger Woods. His double life as a sabermetrician led to conflict with Elin. His famous car accident in his driveway occurred after a particularly heated argument in which, according to a witness, Elin and Tiger got into a profanity-laced back and forth regarding the relative worth of Dewan +/-, UZR and range factor.13. Famous Original Joe C Posted: January 31, 2013 at 11:07 AM (#4358986)
On the cover it's actually Tom M. Tango.
Yeah, that was my "source".
Tom Must Tango15. just plain joe Posted: January 31, 2013 at 11:11 AM (#4358995)
More than nine years later, it still pains me to read about that.
Nearly 30 years (jeesh, the time), and it still pains me to think about Leon F. Durham missing that grounder in the 1984 NLCS. I am no longer really a Cubs fan but I was then and I thought sure that was the year they were going to the Series.
Its been 49 years and I still hate Chico Ruiz.
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Alan Cherry Irrigation Overview
This profile for Alan Cherry Irrigation is located in Panama City, FL.Alan Cherry Irrigation industry is listed as Irrigation System. There are no officers listed for this company.
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Alan Cherry, Inc.
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Alan Cherry
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Modern Psychometrics, Third Edition: The Science of Psychological Assessment: 3 Paperback – 1 Oct 2008
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"Without assuming any prior knowledge of mathematics, nor of psychology, Modern Psychometrics 3rd Edition outlines the major issues in psychometrics and places them into context by reviewing past and current developments in intelligence research and personality theory. This will be an extraordinarily easy book to read for anyone who is interested in learning what psychometrics is about." Alberto Maydeu-Oliveras, University of Barcelona
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Western automakers continue to anticipate a nuclear deal between Iran and the West that will lift economic sanctions and allow the companies to access what is said to be the world's ripest emerging market.
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Immigration Matter: Mexican Strawberry Pickers Seek African American Help
There are 77 comments on the news.ncmonline.com story from Feb 29, 2008, titled Immigration Matter: Mexican Strawberry Pickers Seek African American Help. In it, news.ncmonline.com reports that:
New America Media, Commentary, Ted Quant , Posted: Feb 28, 2008 Editor's Note: Thirty men from Mexico who came to pick strawberries in Louisiana and found themselves in "slave-like" conditions ended up ...
Join the discussion below, or Read more at news.ncmonline.com.
"I'm just one vote."
Since: Sep 07
Washington, D.C.
#1 Feb 29, 2008
Heck no. You are taking away jobs that poor white & blacks would do. Go back to your homeland and stay there.
Never ever help an illegal alien.
#2 Feb 29, 2008
Ahhhh...I see blame the working man not the person hiring them. Makes sense right?
Also enforce the fact that they are "migrants" and disregard the fact that they are humans and deserve what they get. And this whole time I was under the false impression that all humans have the right to be treated..well dare I say humanely?
"I'm just one vote."
Since: Sep 07
Washington, D.C.
#3 Feb 29, 2008
There is no such thing as "Human Rights", so deal with it.
And believe me, as far as I'm concerned the people who hired illegal aliens need to find themselves in jail as well. Was just keeping it simple for the masses.
The 3rd worlds lack of population control should not be mine nor my country's problem. Let them eat dirt in their native lands.
#4 Feb 29, 2008
since they had H2-A visas they weren't illegal aliens. the company that made them work in those conditions should be held accountable and the recruitor should also be investigated.
"I'm just one vote."
Since: Sep 07
Washington, D.C.
#5 Feb 29, 2008
Bottom line:
Enforce & FUND the current laws
Problem solved.
#6 Feb 29, 2008
Hate to tell you brah..but "your country" as you say does not sit on some imaginary force field unaffected by the happenings of the entire Earth. If you truly believe there are no such things as Human Rights then you do not have the right to decry such matters when and if yours are violated. Any person who has to go to such measures to find work does so for very valid reasons. Now again ask yourself..if work was available in their homeland don't you think they would have stayed?
#7 Feb 29, 2008
Good point..which goes to show you that good ol' Unkle is selective in his readings.
Since: Jul 07
Jamaica Queens, New York
#8 Feb 29, 2008
I personally don't have anything against immigrants although I have to say many jobs I use to see black men doing, Mexicans are now doing. They also help to lower the wages of those occupations. Why pay this man $15 an hour when you can pay a mexican $100 for the whole job. I seen this happen back in the days with home health aids also. I remember when home health aids got paid decent money but once many Carribeans started taking those jobs, the wages dropped to minimum wage. Not saying anything against anyone, just stating what i noticed.
#9 Feb 29, 2008
I'm sorry, but I won't take anyone seriously who advocates the racist and exclusionary idea of Aztlan, a racist myth of a nation that would be for Latinos only, shutting everyone else out. Their motto is "Everything for the race. For those outside the race, nothing."
Since: Apr 07
#10 Mar 1, 2008
No I don't think they would've stayed.
Because of your name.
How many here to NOT know what Aztlan means?
Here's a clue.
"Illegals are not immigrants..."
Since: Apr 07
Mid-south, USA
#11 Mar 1, 2008
Many of them HAD jobs...how do you think they come up with $6000.00 to pay their coyotes? They are coming more for the freebies than they jobs...their aim is not to come here for a job, but rather to come and work our entilement system. Check out their baby boom.
"Illegals are not immigrants..."
Since: Apr 07
Mid-south, USA
#12 Mar 1, 2008
They aren't immigrants if they aren't here legally...they are illegal intruders.
#13 Mar 1, 2008
no one, and I mean no one is as anti-mexican as me. But that's because the mexican on the whole is anti African. I say this because of the history of the country, the treatment of blacks in mexico, the attitude towards black in the u.s. and others..
but I'm NOT anti-human..
Since: Apr 07
#14 Mar 1, 2008
Well that was double speak.
United States
#15 Mar 1, 2008
Hahahaha..what a fool. Let me guess you watched Mel Gibsons Apocalypto and now your an expert on Mayan/Aztec/Mexica culture.
And FYI genius Aztlan is the tale of a particular place in the Americas as told by the Aztecs (Mexica)
"La Voz De Aztlan" is a radical group that I have no affiliation with nor do I share "all" the same viewpoints with..Get it? got it? good.
You know some of you really need to research things before you speak on them, otherwise you end up looking like homeboy I'm commenting on.
To add: Aztlan is part of my middle name, hence the usage in my handle.
#16 Mar 1, 2008
lol it just wasn't "white" speak..
what about it being the truth..
most things in this world are not so simple as white folks try to make it. That's one reason they invented the concept of "race" and always want black people or People Of Color to have a leader, it's easier that way to control.
But the truth is I have a problem with another group of People of Color buying into white supremacy.(that's why the statement I'm anti mexican)
However I understand white surpremacy and how it affects people who are poor and miseducated, so I can't really hold it against them..(that's my human statement)
Any questions?
United States
#17 Mar 1, 2008
No offense Black-Injun..but how much do you really know about the history of Afro-Mexicans in Mexico? Much of the anti-sentiment and abuse came from the arriving Criollos of Spain, the natives themselves, which is currently most of Mexico viewed and revered black people, they saw and opposed slavery. In fact in a black man named Gaspar Yanga is held in such high regards that he is a national hero in Mexico. As such Mexico is by far less (as you say) "Anti-African". Your ideology stems from the media hyped attitudes you view here in the U.S. and by the Criollo controlled governments in Mexico.
Again are there Mexicans who despise black people? Yes...are their Blacks who despise Mexicans? Of course. All this really says though is that this is not a black or brown condition but a human one.
Believe as you wish, but look at the situation a little deeper. View the factual history.
#18 Mar 1, 2008
No offense Black-Injun..but how much do you really know about the history of Afro-Mexicans in Mexico?
None taken..I know that blacks have been in that area since 1200 B.C. or before. However you are speaking of the most recent arrivals, the ENSLAVED.
Much of the anti-sentiment and abuse came from the arriving Criollos of Spain, the natives themselves, which is currently most of Mexico viewed and revered black people, they saw and opposed slavery. In fact in a black man named Gaspar Yanga is held in such high regards that he is a national hero in Mexico.
The black in Mexico is more complex than the negro in America. First Yanga is still a "slave"..do you have any black "heroes" that were, let's say, Great Political leaders?
The indios didn't mind the blacks because the mestizo was kickin both their azzes. Black racism maybe started with the criollos system, but it was continued with the mestizo with a vengence.
and I do know enough about mexican history to tell your ticky azz that slavery was outlawed because of the treatment of the indians, not the blacks but when texax wanted slavery, the mexican constitution had already outlawed it for the indios.
As such Mexico is by far less (as you say) "Anti-African".
One of the main reasons mexico is not as "anti-African is because the Africans have been treated so poorly, they don't want to identify as African. Therefore no problem if they don't exist as a group. I was looking for an article by a Mexican that I read years ago about the attitude of Black and mestizo marriage in mexico. If I remember correctly, the governer had to leave town and move to Cuba because he married a black.
Your ideology stems from the media hyped attitudes you view here in the U.S. and by the Criollo controlled governments in Mexico.
Don't blame that shty on the Criollos, that's like these white folk here blaming disavowing their past history. My ideology stems from a lot of reading and living in california for 18 years.
#19 Mar 1, 2008
They can't be human in Mexico? They are criminals, nothing but. Pretending to make this a Human Rights issue is a dasterdly disception.
#20 Mar 1, 2008
boy white foke love to throw that word "criminal" around..lol here a mexican steals a loaf of bread and you mofo steal a country..
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Skirting the map in Tower Control - Blaster, E-litre 3K, and Splatling on the other team, with my Tri-slosher equipped. I envisage having a hard time, if I try to face them head on. I try to ...
11 hours ago
LMAO Nice :))
LOL! Awesome, boy that brings back memories.
That video was really loud. Almost blew my speakers out.
If you liked that, you should like this...as long as you're not a homo...
Also, you blog is kind of gay. Not what's in the blog, but the actual blog itself. It's making my type 'toungman' in the little word verification box. Gay.
lol where did u find this (didnt want that scientist anyway)
LOL - very nice.


text:
When Obama Ran Against The Mandate
Democrats and conservatives alike are fond of attacking Mitt Romney and Newt Gingrich for their previous support of a health insurance mandate. But they're not the only flip-floppers: In 2008 President Obama, while debating his Democratic primary opponents and attempting to drawn a contrast, railed against the individual mandate which is now at the center of his current landmark piece of legislation. Here's a video mash up of then Senator Obama criticizing the idea of forcing individual to buy health care.
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Weeds of Canada and the Northern United States: A Guide for Identification1999by Royer, France; Dickinson, Richard
Aphids on the World's Crops: An Identification and Information GuideApr 7 2000by R. L. Blackman and V. F. EastopOnly 1 left in stock - order soon.More buying choicesEligible for FREE ShippingExcerpt
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Ukraine: domestic prices for peas continue growing - APK-Inform
The current price situation largely determines the interest of Ukrainian agrarians in cultivation of peas and efficiency of the reporting market segment. The analysis of dynamics of the domestic prices for peas in Ukraine during 5 recent seasons shows that the general price trend is bullish, with characteristic busts in the beginning of each season. Since the beginning of the reporting period (July 2008) until the last month of 2012/13 MY (June 2013) the price for peas in Ukraine increased by nearly 74%, and reached 2845-2887 UAH/t, depending on the delivery terms. At the same time, the minimum bid price for peas (1096 UAH/t) was observed in June 2009.
You can become acquainted with the supply and demand balances for peas, the price situation on the domestic market and other issues on development of the pulses market from the new study of APK-Inform Agency "Market of peas, beans, chickpeas in Ukraine and Russia" .
Also, we should note that the analysis of the price situation on the Ukrainian market of niche crops is regularly monitored in the edition Agrimarket Weekly.
Special offer: after purchasing the reporting study, you get the opportunity to receive Agrimarket Weekly in electronic form for free during two months.
Contacts: +38 0562 32 15 95 (ext. 115), email@example.com
You should be authorized to post comment
Ukraine harvested nearly 29 mln tonnes of grains - Ministry of Agrarian Policy
July 29, 17:00
APK-Inform to present the updated review "Market of high-oleic sunflower oil in Ukraine - 2016"
July 29, 13:35
Expert of risk management on the world market of grains and oils became the sponsor of Oilseeds&Oils-2016
July 29, 09:21
Grains - the main driver of development of agricultural products export from Ukraine
July 28, 14:05
Ukraine harvested over 24 mln tonnes of grains - Ministry of Agrarian Policy
July 27, 10:30


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Prince George's passions: Planes, dinosaurs and so much more
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X-Pro1 w/ Metabones Speed Booster and Voigtlander 58/1.4 Nikon
Started Aug 11, 2014 | Discussions thread
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nikon201068 • Forum Member • Posts: 94
X-Pro1 w/ Metabones Speed Booster and Voigtlander 58/1.4 Nikon
Aug 11, 2014
My X-Pro1 with Metabones Speed Booster and Voigtlander 58/1.4 Nikon lens. Shot through the crib between the vertical (crib) wooden rails so there's vignetting on the sides. So far, I am happy with this combo. I have few more Nikon, Zeiss and Voigtlander lenses I will test out.
f2.8, 1/30s, ISO 1250 hand held. SOOC jpeg. No PP.
Fujifilm X-Pro1
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text: Home > Daily-tips 15 December 2009 Marriage a cure-all? 0 Married people are less likely to suffer from depression, anxiety and substance abuse, a study has found. This, despite the bad press marriage gets from cartoonists and stand-up comedians. But this is no reason to rush out and get married to the first person who looks faintly willing. Those who have been down this road know that there are few things that can make you more lonely and miserable than a marriage that doesn't work. Forever is a long time and marriage partners have to be chosen with the utmost care. Then throw everything you have at it to make it work. But by the same token, you should also know when there's no hope and it's time to bail. Read more: Marriage good for mind and body Win with Health24's awesome competitions More in Daily-tips Healthier meals cost families more More: Daily-tips advertisement Read Health24's Comments Policy Comment on this story 0 comments Comments have been closed for this article. Logout Comment 0 characters remaining Share on Facebook Loading comments... Other news Lifestyle Smokers who are giving up may drink less Sex 9 facts you should know about chlamydia Diet and nutrition When a healthy diet becomes unhealthy Medical Surgery not always needed for meniscal tears in the knee Sex Hope for vaccine against chlamydia Medical 1 in 10 Americans has experienced ringing in the ears From our sponsors Update on Equazen acquisition by Flordis South Africa 2016 When lice just keep coming back! Cipla Community Hero: Ana Rocha Innovation in Diabetes Care Live healthier Did you know? » Allergies less common in kids who suck their thumbs Two-dose chickenpox shot gets the job done What nits and lice look like in your hair 5 diseases your child can pick up at school School is a place for learning, but it also creates the perfect environment for an infectious disease to spread like wildfire. Healthy legs » The results you should know from the Healthy Legs Survey Could your job be causing varicose veins? Varicose veins? Don't do these exercises 5 stages of vein disease Weak or damaged valves in the veins can cause varicose veins.


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|Publication number
|Publication type
|Application number
|Publication date
|Apr 12, 1977
|Filing date
|Sep 11, 1975
|Priority date
|Sep 20, 1974
|Also published as
|Publication number
|Yuichi Ono, Kazuhiro Kurata, Masao Kawamura, Makoto Morioka, Kazuhiro Ito
|Original Assignee
|Hitachi, Ltd.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (7), Non-Patent Citations (2), Referenced by (12), Classifications (26)
|External Links: USPTO, USPTO Assignment, Espacenet
1. Field of the Invention
The present invention relates to a light emitting semiconductor device, more particularly, to a high output light emitting semiconductor device made of a III-V mixed compound semiconductor crystal having a p-n junction, and to a method for making the same.
2. Description of the Prior Art
Various types of light emitting semiconductor devices are already known. They are often made of a III-V mixed compound semiconductor crystal, such as GaAs1 -x Px and Ga1 -x Alx As, having a dome or hemispherical shape so that light generated at a p-n junction, which is formed mostly at the center of the planar surface of the hemisphere, can be emitted outside the crystal without total reflection at the surface of the crystal. In one of these hemispherical dome type geometry devices, the major part of the crystal is of n-conductivity type, and a p-conductivity type region is formed by diffusion at the central portion of the hemispherical crystal. One electrode is formed on the planar surface of the p-conductivity type region and another electrode, in a circular band shape, is also formed on the planar surface of the n-conductivity type region near the circular edge of this surface. The band gap is narrowest at the planar surface and becomes wider as the distance from this surface increases. This distribution of band gap width is most easily obtained by using segregation during crystal growth. Owing to this distribution of band gap width, light generated at the p-n junction formed between the p and n conductivity type regions is hardly absorbed in the crystal and is externally emitted with high efficiency.
In another type of device, a p-conductivity type layer is epitaxially grown on the surface of an n conductivity type III-V mixed compound semiconductor substrate which has a narrower band gap than the surface of opposite side. A circular portion including a part of this layer, which is slightly thicker than the p conductivity type layer, is removed by mesa-etching so that a p-n junction is delimited by this mesa-etching. The crystal is shaped in a dome or hemisphere, and two electrodes are formed on the n- and p-conductivity type layers as described for the type where the surface on which electrodes are provided is planar, and the p conductivity type region is formed by diffusion.
The first type of light emitting device, where the p-conductivity type region formed by selectively diffusing impurities is used directly as one of the two regions forming a p-n junction, has the disadvantage that carrier mobility is small and light emission efficiency is low due to the coexistenance of donars, such as Te, and acceptors, such as Zn, in the p-conductivity type region.
The second type of light emitting device, where the p-n junction is formed by epitaxial growth and delimited by mesa-etching, has the drawback that the diode must be mounted face-down on an auxiliary mounting device having two surfaces, the difference in height of which is equal to the height of the mesa, in order to connect the positive and negative electrodes to their respective external leads.
This complicates the process and lowers the yield rate of fabrication. Furthermore, this type of mounting increases both the thermal and electrical resistances. For this type of light emitting device, the electrical contact resistance at the positive and negative electrodes and the series resistance component of the p-conductivity type Ga1 -x Alx As layer cannot be significantly reduced, because the majority carrier concentration in the p-conductivity type layer and that in the n conductivity type layer are preferably 1 - 2 � 1018 cm- 3, taking the injection efficiency and crystallographical structure into account. Since the external quantum efficiency of these high output power light emitting devices is ordinarily from 5 to 15%, high thermal and electrical resistances are serious drawbacks of this type of light emitting device.
An object of this invention is, therefore, to provide a high power limit emitting device, the feasibility of which is high and at the same time the assembly of which is easy.
Another object of this invention is to provide a new method for making such a high power light emitting device.
According to the invention, a p-conductivity type and then an n conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a wider band gap than the two above-mentioned layers. A surface portion of the epitaxially grown layers which is not covered by a mask deposited on the n conductivity type layer, at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape, so that the n-conductivity type region is located at the central portion of the hemisphere.
According to another more advantageous mode of realization of this invention, a ditch reaching the n conductivity type layer is formed by removing a peripheral portion of the p-n junction by selective etching so as to isolate the p-n junction by air.
The invention will be better understood from the following detailed description thereof taken in conjunction with the drawing. It should, however, be understood that the present invention is not limited to the particular embodiments shown hereinbelow, but that various changes and modifications can be made without departing from the spirit of the present invention.
FIGS. 1 to 5 are sectional views illustrating various stages in the fabrication of a high power limit emitting diode according to this invention.
FIG. 6 is a graph of the variation of the forbidden band gap width along the center line of the diode depicted in FIG. 5, and
FIG. 7 is a sectional view of another high power light emitting diode according to the invention.
FIGS. 1 to 5 illustrate various stages in the fabrication of a light emitting diode made of Ga1 -x Alx As according to this invention. A Ga1 -x Alx As substrate 1 was prepared by liquid phase crystal growth method. The conductivity type of the substrate can be either p or n. The mixing ratio was greater than 0.2 at one surface and increased toward the opposite surface. A p conductivity type Ga1 -x Alx As 0 ≦ x < 0.2 layer 2, 20 to 30μ thick, doped with Zn, and an n conductivity type Ga1 -x Alx As 0 ≦0 x < 0.2 layer 3, 2 to 3 μ thick, doped with Te, were successively grown epitaxially on the surface of the substrate 1, each having a narrower forbidden band gap than the substrate 1. The thickness of the p conductivity type layer is preferably between 20 and 30μ. A layer thinner than 20μ may contain many crystal defects or stress at the upper surface due to mismatching of the lattice constant, as will be discussed later, and for a layer thicker than 30μ, it is difficult to obtain an appropriate mixing ratio at the upper surface because of the great segregation coefficient of AlAs with respect to GaAs. The thickness of the n conductivity type layer 3 is preferably between 2 and 3μ. The thinner the layer, the better the heat generated at the p-n junction is dissipated. The layer should be, at most, 3μ thick. However, for a layer thinner than 2μ, the formation of an ohmic contact on it will be difficult. The impurity concentration of p- and n-conductivity type layers was 2 � 1018 cm- 3 and 1 � 1018 cm- 3 respectively. After having well washed and dried the crystal thus obtained, an Al2 O3 layer about 1000 A thick and a phosphosilicate glass layer about 2000 A thick were deposited by chemical vapor deposition method on the n-conductivity type layer 3. A part of this double oxide layer was removed, leaving a circle having a diameter of 150μ by photoetching method so as to form a mask 4. The crystal was placed in a quartz ampoule and Zn impurities were diffused in the surface at 700� C for 1.5 hours using a diffusion source of ZnAs2. By this process a p+ conductivity type layer 5 having a diffusion depth of about 5μ was formed and, at the same time, a p-n junction 6 formed between the p-conductivity type layer 2 and the n-conductivity type layer 3 was bounded in a desired shape, as shown in FIG. 2.
After having etched away the mask 4, a new layer of phosphosilicate glass 7 about 5000 A thick was deposited on the surface of the crystal by chemical vapor deposition. An opening for an electrode for the n-conductivity type layer was provided in this phosphosilicate glass layer 7 by photoetching. An ohmic contact 8 of AuGe-Ni-Au was deposited in this opening by evaporation, as illustrated in FIG. 3. After having removed this phosphosilicate glass layer 7 by etching, a new phosphosilicate glass layer 9 about 5000 A thick was deposited and a circular band shaped opening was formed near the edge of the surface of the crystal by photoetching. Through this opening an ohmic contact 10 of an alloy of AuZn or AnSbZn was formed by evaporation, as shown in FIG. 4. The crystal was formed in a hemispherical dome shape by mechanical and chemical polishing so that the center of the hemisphere was approximately in accordance with the center of the planar surface, as shown in FIG. 5.
FIG. 6 shows the variation of the forbidden band gap width along the center line of the diode indicated in FIG. 5. The variation of the forbidden band gap width of each layer is easily obtained by using the difference of the segregation coefficient of GaAs and that of AlAs, because the latter solidifies faster and has a wider forbidden band gap than the former.
The light emitting dioe of this structure can overcome the drawbacks of the above-mentioned traditional techniques, namely, difficulty of the control of wavelength of the emitted light and difficulty of assembly, simultaneously. The contact resistance of the ohmic contact formed on the n-conductivity type layer can be reduced by increasing the n-conductivity type impurity concentration at the surface. The contact resistance of the ohmic contact formed on the p+ conductivity type layer is very low, because the impurity concentration at the surface of this layer formed during the process of isolation diffusion is very high. In this way, one can prevent the saturation phenomena in the output power of generated light due to heat production, which is a characteristic of high power light emitting diodes according to prior art techniques.
Furthermore, for light emitting diodes, it is more advantageous to form a p-conductivity type layer at first and then an n-conductivity type layer as indicated above than to form a p-conductivity type layer on an n-conductivity type substrate in accordance with the prior art techniques. The reason for this is believed to be as follows.
In general, the mobility of electrons is greater than that of holes in substances used for injection type light emitting semiconductor diodes, such as GaAs,Ga1 -x Alx As, and other mixed crystal compound semiconductors which have a direct transition type band structure. Consequently, the number of electrons injected into the p-conductivity type region forming a p-n junction is greater than the number of holes injected into the n-conductivity type region. Therefore, light is generated mostly in the p-conductivity type region. Thus, in order to increase the light emission efficiency, it is very important to improve the crystallographical properties of this region. For this purpose, it is advantageous that the p-conductivity type region be very thick so that, near the upper surface of this region, there exist practically no crystal defects due to the difference in lattice constants and so forth, which defects can exist in abundance near an interface between a substrate and a layer epitaxially grown on it. Another reason consists in the fact that carbon is an amphoteric impurity with respect to III-V compound semiconductors. It behaves as n-type impurity in a lower temperature region and as p-type impurity in a higher temperature region. III-V compound semiconductor crystals are often grown in a jig made of graphite and some carbon is inevitably introduced into these crystals during the crystal growth process. In the structure described above, since the p-conductivity type region is placed inside the n-conductivity type region, the temperature is higher in the former than in the latter. Consequently, carbon impurities are not a problem, even if some carbon is contained in the light emitting region.
Several characteristics of diodes thus assembled were measured and it was verified that the light output was about 50 mW (for a direct current of 300 mA), the peak wavelength of the emitted light was 8020A, the thermal resistance was about 20-25 deg/W, and the saturation phenomena of light output were not so evident as for traditional type devices due to the fact that the thermal resistance was reduced. The yield rate for the assembly was also increased to 95%, which was greater by about 25% than the yield rate for traditional devices which is 70%. The I-IV characteristics, which are the most important electric properties, were as good as those of traditional type devices.
In Embodiment 1, Zn impurities were diffused into the crystal. In this way, the interface between the n-conductivity type region 3 and the p+-conductivity type region 5 is curved not only due to normal lateral diffusion but also due to extraordinary diffusion between a diffusion mask and a semiconductor body. This may sometimes shorten the life of the diode by strengthening the electric field at the edge of the p-n junction formed between the n-conductivity type layer 3 and the p-conductivity type layer 2. This disadvantage is obviated by using ion implantation techniques.
After having formed the mask 4, Zn+ ions were implanted in the crystal, the temperature of which was maintained between room temperature and 400� C using the mask 4 with a dose between 2.5 � 1015 cm- 2 and 2 � 1016 cm- 2. The mask 4 intercepted the Zn ions and the surface region, which was not covered by the mask 4, was converted into a p+-conductivity type region. The phosphosilicate glass layer on the Al2 O3 layer was removed by using an etching solution of HF : NH4 F = 1 : 6. After having washed and dried the crystal, an SiO2 layer about 2000 A thick was deposited by chemical vapor deposition on the Al2 O3 layer and on the exposed surface of the p+-conductivity type layer. The crystal was then put in a vacuum sealed quartz ampoule and heated for a period of 150 minutes at a temperature of 700� C. By this process the implanted Zn ions were diffused so as to form a p+-conductivity type layer 5 reaching the p-conductivity type layer 2, so that the remaining part of the n-conductivity type layer 3 was completely surrounded by the p+-conductivity type layer 5 and a well-defined p-n junction 6 was formed, as indicated in FIG. 2. A part of the crystal was cleft in order to examine, by using a scanning electron microscope, how the p-n junction was formed, and it was observed that there was no extraordinary diffusion at the interface between the Al2 O3 layer and the compound semiconductor crystal and that the p+-conductivity type layer formed by diffusion reached well into the p-conductivity type layer 2.
After the formation of the p+-conductivity type layer the diode was assembled just as in Embodiment 1. The high power light emitting diode thus obtained had mechanical and electrical properties identical to that obtained in Embodiment 1 and a longer life.
The diode obtained in Embodiment 1 an be improved by mesa-etching for isolating the n-conductivity type layer 3 by air. A circular band-shaped opening was formed in the phosphosilicate layer 7 so as to expose a narrow region of the surface of the crystal, which comprised the circular boundary between the n-conductivity type layer 3 and the p+-conductivity type layer 5. The crystal was dipped in an etching solution (temperature 18� � 0.2� C) having a composition of ethylene glycol : hydrogen peroxide : sulfuric acid = 7 : 2 : 1 for a period of about 10 minutes under agitation. In this way a ditch 11 about 5μ deep was obtained. Since the n conductivity type layer 3 was thinner than 3μ, it is evident that a part of the p-n junction was etched away. Another phosphosilicate layer 12 about 6000 A thick was deposited on the crystal in order to passivate the surface, which layer was removed except for the region in the ditch by photoetching method. The crystal was formed into a hemispherical dome by mechanical and chemical polishing, as shown in FIG. 7, and as described in Embodiment 1.
In the above Embodiments, liquid phase epitaxial growth of Ga1 -x Alx As on a Ga1 -x Alx As substrate is described. However, it is evident that the method described above can be applied to other combinations such as GaP-Ga1 -x Inx P (0.3 < x < 1), GaP-GaAs1 -x Px (0 < x < 0.4), etc.
|Cited Patent
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|Potemski, I.B.M. Tech. Discl. Bull., vol. 15, No. 1, June, 1972, p. 147.
|Citing Patent
|Filing date
|Publication date
|Feb 24, 1977
|Oct 24, 1978
|Hitachi, Ltd.
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|Jan 25, 1979
|Matsushita Electric Ind Co Ltd
|Lichtemittierende halbleitervorrichtung und verfahren zu ihrer herstellung
|Dec 22, 1999
|May 6, 2004
|Epigap Optoelektronik Gmbh
|Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstb�ndelnden Halbleiterk�rper
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification


text:
Spree to Be You and Me
Apparently, few years back there was some contest going on involving the Polyphonic Spree and fan-made videos. Which explains this just-posted video. --Robert Wilonsky
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