text:
Minocin Injection
European Commission Approves Late Post-MI Ticagrelor at 60 mg »
"LONDON, UK â" The European Commission (EC) has followed the recommendation last year from its Committee for Medicinal Products for Human Use (CHMP) for an additional indication for the oral platelet inhibitor ticagrelor (Brilique, AstraZe"...
Read the European Commission Approves Late Post-MI Ticagrelor at 60 mg article »
Minocin Injection
(minocycline) for Injection 100 Mg/Vial Intravenous
To reduce the development of drug-resistant bacteria and maintain the effectiveness of MINOCIN® (minocycline) Injection and other antibacterial drugs, MINOCIN® (minocycline) injection should be used only to treat or prevent infections that are proven or strongly suspected to be caused by bacteria.
MINOCIN, minocycline for injection, a sterile formulation of a semisynthetic derivative of tetracycline, is 4,7-Bis(dimethylamino)-1,4,4a,5,5a,6,11,12a-octahydro-3,10,12,12atetrahydroxy-1,11-dioxo-2-naphthacenecarboxamide monohydrochloride.
Its structural formula is:
C23H27N3O7•HCl M.W. 493.94
Each vial, dried by cryodesiccation, contains minocycline HCl equivalent to 100 mg minocycline. When reconstituted with 5 mL of Sterile Water for Injection USP the pH ranges from 2.0 to 2.8.
What are the precautions when taking minocycline inj (Minocin Injection)?
See also Side Effects section.
Before using minocycline, tell your doctor or pharmacist if you are allergic to it; or to other tetracycline medication (such as doxycycline, tetracycline); or if you have any other allergies. This product may contain inactive ingredients, which can cause allergic reactions or other problems. Talk to your pharmacist for more details.
Before using this medication, tell your doctor or pharmacist your medical history, especially of: kidney disease, liver disease.
This drug may make you dizzy or drowsy. Do not drive, use machinery, or do any activity that requires alertness until you are sure you can perform such activities safely. Limit alcoholic beverages.
This medication may rarely make you more sensitive to the sun. Avoid...
Last reviewed on RxList: 12/1/2014
This monograph has been modified to include the generic and brand name in many instances.
Minocin Injection FDA Prescribing Information
Additional Minocin Injection Information
Report Problems to the Food and Drug Administration
You are encouraged to report negative side effects of prescription drugs to the FDA. Visit the FDA MedWatch website or call 1-800-FDA-1088.
Women's Health
Find out what women really need.


text:
Active Media Products Launches Ultra Tiny Pink Wink USB Drive
Active Media Products Launches Ultra Tiny Pink Wink USB Drive
Waterproof Pink Wink Drive Measures only 1.2 inches Long and Weighs Less Than 1/20 Oz
Fremont, California - December 8, 2009 - Active Media Products, manufacturer of SSDs and innovative USB drives, today released a new model of their popular, ultra-tiny 16GB Wink USB drive in Pink.
The incredibly small Pink Wink drive is available today in 16GB capacity, and will be available in smaller capacities later this month. The drive, model number MC16G-PINKWINK, is listed on now Amazon for about $39. According to Jerry Thomson, vice president of sales at Active Media Products, "the Wink drive has been enormously popular, but the number one request from customers is for a warmer color. In response to customer requests we're happy to launch the Pink Wink, which should arrive in time for the holidays for customers who order now."
About Active Media Productsgg
Based in the heart of Silicon Valley, Active Media Products LLC is dedicated to developing creative new media products that improve performance and enhance the user's experience. Our focus on innovative product development enables us to bring new technology to market a step ahead of the competition. AMP is a leader in netbook SSD upgrades and manufactures the Obama and the endangered species line of USB drives.
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Forum Activity
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- Mangstor's NX-Series storage arrays accelerate HPC throughput with new burst buffer capabilities

subset: commoncrawl


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Hotels near Stadium Armory Station
Search hotels near Stadium Armory Station in Washington
Trending now in Washington
307 people looked at this hotel in the last hour
Most recent review
"Our family stayed two nights and were thankful for the peaceful and comfortable accommodations. The staff was helpful. The location was a less than $10 uber ride to the Capitol and we appreciated being away from the tourist crowds when it was time to rest at the hotel. We recommend this hotel and..."
M, Jun 2016, US
245 people looked at this hotel in the last hour
Most recent review
"Very well styled and large room. Great linens, super comfortable and awesome service. The hot restaurant is a DC gem too. The pool deck is a great place to relax and/or work. Bar serving drinks until 11pm every night too."
A Traveller, Jun 2016, US
204 people looked at this hotel in the last hour
Most recent review
"Overall hotel is good but didn't get chance to test in restaurant due to renovate."
A Traveller, Jun 2016, US
102 people looked at this hotel in the last hour
Most recent review
"Stayed 4 nights with spouse and 2 grandkids ages 8 & 10. Room was a double Queen. Parked the car at a nearby lot and left it for the 4 day visit. Cheaper than paying for the Hotel valet and didn't plan to drive in DC. Close to Union Station and used hop-on, Hop-off bus tours to get around to DC a..."
C, Jun 2016, US
100 people looked at this hotel in the last hour
Most recent review
"Well-kept and modern hotel in attractive neighborhood and next to Capitol and House and Senate office buildings. Cordial staff and comfortable room. Continental breakfast but no restaurant, although there are plenty within easy walking distance."
Y, Jun 2016, US
97 people looked at this hotel in the last hour
Most recent review
"Although there was construction during my stay, I didn't mind. The hotel would have been more expensive if it was clear. I slept well, my room was great, and I did have a good view of the stadium and area. I loved being close to Downtown D.C., and if you are just using the room for rest and then ..."
A Traveller, Jun 2016, US
90 people looked at this hotel in the last hour
Most recent review
"Service was awesome! Place was perfect for our stay!"
A Traveller, Jun 2016, US
86 people looked at this hotel in the last hour
Most recent review
A Traveller, Feb 2016, US
79 people looked at this hotel in the last hour
51 people looked at this hotel in the last hour
Most recent review
"Really great for a hostel! The staff are lovely, the place is super clean, got clear fair rules to make everyone's stay enjoyable and provided towels and sheets. For such a low price couldn't have asked for better, much more than expected for cost. Although I didn't particpate , there was also da..."
A Traveller, May 2016, GB
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Map of hotels near Stadium Armory Station
- White House
- National Mall (The Mall)
- Smithsonian Institution
- United States Capitol
- Union Station Shopping Center
- Vietnam Veterans Memorial
- Walter E. Washington Convention Center
- Nationals Park
- Old Town Alexandria
- Smithsonian's National Zoo
- Newseum
- Verizon Center (MCI Center)
- National Harbor
- Georgetown University
- George Washington University
- Tysons Corner Center
- FedEx Field
- Arlington National Cemetery
- Washington Monument
- Howard University
Hotels in Washington near Stadium Armory Station
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When you search for hotels near Stadium Armory Station with Hotels.com, you need to first check our online map and see the distance you will be from Stadium Armory Station, District of Columbia.
Our maps are based on hotel search and display areas and neighborhoods of each hotel so you can see how close you are from Stadium Armory Station and refine your search within Washington or District of Columbia based on closest public transportation, restaurants and entertainment so you can easily get around the city. All the hotels details page show an option for free or paid onsite parking.
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...I'm passionate about arts education and along with my husband established the world's only scholarship in cabaret at Long Island University in 2007. Outside the arts, I've facilitated life success workshops for PSI Seminars. Shakespeare declared it: "All the world's a stage, And all the men and...
9 Subjects: including German, English, writing, ESL/ESOL
Brooklyn, NY
...I went to college for english and music, and I am excited to pass some of that knowledge on. I think it is very important for everyone to find their own voice in their writing, as well as their own voices as singers and artists. I am very talented at finding creative ways to teach and help a student understand.
32 Subjects: including German, English, reading, writing
Long Island City, NY
I love all things German. I majored in German in college, lived in the former German Democratic Republic in the early 1980s, studied for two semesters in Marburg an der Lahn and have been a regular attender at the New York University German Book Club. Recently, I began tutoring a graduate student in German using the book "German Quickly" and have found it rewarding.
2 Subjects: including German, grammar
New York, NY
...I also tutor high school and middle school kids regularly. Additionally, since I am a Certified Spanish Teacher for the public schools, I work as a "sub" at 5 of the "magnet schools" of the county where I live. My method in teaching all these languages is to speak as much as possible in the lan...
6 Subjects: including German, English, Spanish, French
Fair Haven, NJ
...In addition to helping my students improve in specific study areas, I try to equip them with critical thinking and reasoning skills that will benefit them in every realm of their lives. If you think I sound like a good fit, please do get in touch. As I am new on WyzAnt, I will happily provide references.
31 Subjects: including German, English, reading, writing
Mahwah, NJ


text:
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There is still unbelievers of Iran,US nuclear deal - official
03 February 2014 [17:40] -
It is clear that there are people both in Iran and the U.S., that are skeptical of an agreement on Iran's nuclear program, U.S. State Department's Persian-speaking spokesman Alan Eyre told
on Jan. 30.
The official was commenting on certain bodies that opposed the nuclear deal in Geneva, between Iran and the P5+1 group.
It should be noted that Iran and the P5+1 reached a nuclear agreement on Nov. 24. Iran has agreed to curb some of its nuclear activities for six months in return for sanctions relief. Iran and the P5+1 group agreed to implement the agreement starting January 20, 2014.
Under the agreement, six major powers agreed to give Iran access to $4.2 billion in revenues blocked overseas if it carries out the deal, which offers sanctions relief in exchange for steps to curb the Iranian nuclear program.
Some members of the U.S. congress proposed a bill for new sanctions on Iran, however U.S. President Barack Obama said he would veto the bill. Alan Eyre says there will be no additional sanctions on Iran, if the country sticks to the agreement.
"The U.S. Constitution respects the principle of separation and independence of powers in America, so the Geneva agreement reads that: the U.S. government, within the authority of the president and the Congress will not impose new sanctions against Iran," Eyre said.
As for Iran, Eyre said that the Islamic Republic should ratify and implement additional protocol on the nuclear program within the authorities of the Iranian president and the parliament as well.
"In other words, both sides indirectly mention the separation of their countries' executive and legislative powers," Eyre said.
The official went on to add that there are no differences in viewpoints within the administration of the U.S.president about the goal.
"The Obama administration believes that if such a trend continues, it will be able to offer a powerful argument to the Congress that now is not the time to impose new sanctions on Iran," Eyre noted.
He went on to say that there are still serious differences between the two sides (Iran and the U.S.), and the negotiations will be complicated.
"However, both parties have shown seriousness, good faith and mutual respect," he said. "Creating more confidence needs more time, and both sides should continue moving forward," Eyre noted.
"The administration of the U.S. president is obligated to use dynamic diplomacy to find a peaceful solution to Iran's nuclear program and prevent it from making a nuclear weapon," Eyre said. "The long-term agreement which is mentioned in the Joint Plan of Action will help to realize this goal."
Eyre noted that the U.S. will enter the new negotiations with Iran, carefully eyeing the future challenges.
"As it is mentioned in the Joint Plan of Action, we have an unprecedented opportunity to peacefully resolve this serious national security concern," the official noted. "This is our goal, and challenge too."
Eyre also spoke about Iranian president Hassan Rouhani's speech at the Davos Economic Forum on Jan. 23.
"We've listened to president Rouhani's speech carefully. The key point is that Iran-U.S. relations will need time to improve. The global community expects and hopes that not only Iranian leaders' words change, but the administration would take some new and constructive approaches as well," Eyre said.
Eyre went on to add that good relations can be developed on values and common interests, adding that the global community is searching for a peaceful solution to Iran's nuclear program, based on common interests and dynamic diplomacy.
"We're very hopeful that the process between Iran and the P5+1 will continue for reaching a comprehensive agreement on the nuclear issue," he said, adding that the U.S. has taken important steps for implementing the Geneva deal.
"It should be recalled that Iran's unsparing support for Syria's brutal and ruthless regime, and also refusing to support the core element of the "Geneva 1" framework, indicates that the change in words is not sufficient, and the world expects Iran to take constructive actions towards establishing peace and stability," Eyre underscored.
The official noted that the U.S. has shown its readiness to use powerful and dynamic diplomacy to resolve Iran's nuclear issue peacefully.
Answering the question about whether the U.S. would be willing to send its delegation to Iran, if invited, Eyre said that making estimates about the possible forms of diplomacy is not constructive.
The U.S. and its Western allies suspect Iran of developing a nuclear weapon - something that Iran denies. The Islamic Republic has on numerous occasions stated that it does not seek to develop nuclear weapons, using nuclear energy for medical researches instead.
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Stealth. Gorgon. Regenerator. Cerberus. Zzzap. The Mighty Dragon. They were heroes. Vigilantes. Crusaders for justice, using their superhuman abilites to make Los Angeles a better place. Then the plague of living death spread around the globe. Despite the best efforts of the superheroes, the police, and the military, the hungry corpses rose up and overwhelmed the country. The population was decimated, heroes fell, and the city of angels was left a desolate zombie wasteland like so many others.
Now, a year later, the Mighty Dragon and his companions must overcome their differences and recover from their own scars to protect the thousands of survivors sheltered in their film studio-turned-fortress, the Mount. The heroes lead teams out to scavenge supplies, keep the peace within the walls of their home, and try to be the symbols the survivors so desperately need. For while the ex-humans walk the streets night and day, they are not the only threat left in the world, and the people of the Mount are not the only survivors left in Los Angeles. Across the city, another group has grown and gained power. And they are not heroes.
©2010 Peter Clines (P)2011 Audible, Inc.
"Weak story"
The Characters in this book are in "connectable". The story is so shallow and disjointed.
If you can endure the swearing and barrage of smashing zombie heads, you may muddle thru.
Grandma bibliophile! Audible books make reading with an active life possible.
I was pretty entertained by this book, enough so that I just got the rest of the series. It was a little less impressive for me than "14" and The Fold" but it was still really good I liked the way he introduced the heroes. The narration was good too. I liked having two voices.
"What if superheroes existed in a zombie apocalypse?"
If you like zombies and superheroes this book and this series is for you. There is strong character development throughout. Clines also manages to fill the book with an insider's insight into L.A. that lends a nice regional authenticity.
Clines' world building is sound. He asks and answers all the right questions about how super heroes would function before and after zombie doomsday.
"Hooked on Peter Cline"
Just bought the next two books in this series- fun listen, keeps me entertained and I don't loose interest.
"Meh. Utterly unsatisfying."
I have read 14 and Fold. Loved them! Most people will disagree with me about this review. Thought I would give Ex-Heroes a try. Felt like a bad screenplay. Characters that I could not relate to. I really didn't even like them. Two dimensional; immature banter; hopeless plot line; over done zombie violence.
Not a fun listen. At. All.
Bulls Fan
"Worth a Cedit"
I do not think this book is as good as "14" or "The Fold," but it is still worth a listen. I was not sucked in as quickly as Clines other books, but if you have already listened to those, give this one a chance as once it started rolling, I was engulfed in the plot and characters.
The double narrator (male and female) bothered me a little at first as most of the books I have listened to have only one narrator, but after the first chapter I hardly noticed as it was well read.
Now I need to get book two.
"Super Heroes + a Zombie Apocalypse. YES Please!"
The action, suspense and desire to find out what happens next.
Saint George, a big character that has a big heart in a heartless world.
A middle of the street battle between two factions, it was intense.
Yes, a big reveal about the EX's behavior.
I purchased this book after reading "14" & then "The fold". I figured I would give my new favorite author some more of my money. This book is not written in the same style as "14" & "The fold", so at the start I was a little disappointed, artists must write as they feel I get that. Which is why it doesn't take long to realize again that Peter Clines is a great story writer who has the ability to see ahead of his writing and story.
The narration is fantastically delivered by two seasoned professionals who perform multiple characters and accents. The production is equally fantastic, not a harsh breath or noise in the production.
Overall the story sets the stage for things to come.
If you like the idea of fighting a Zombie Apocalypse with Super Heroes than this is the book for you.
"Not bad."
Not really a big fan of multiple narrators. Got a little confusing at the end.
Also hair and fingernails DO NOT keep
Growing once you are dead.
"One Likable Character"
The main character is likable, but the others are so hard to care about that it that parts of it were a little hard to get through. Luckily, the concept and the backdrop of the story is compelling enough that I was able to overlook it. Realizing that this is a series, I'm hoping the characters develop into something a little more relatable. The least likable character is the leader of the group - even a Vulcan would find her cold, calculating, and emotionless - to the point that's it's really hard to understand why anyone else defers to her.
"Fairly decent zombie read"
The super power hero vs walking dead was a new twist on a very well trodden genre. Once I got through the first few chapters I stuck with it but I had a hell of a time getting started.
I tried listening to this book several times but I was put off by something about it. Maybe it was the voice performance. I'm not a big fan of multiple voices in an audio book. Some can carry it off but I found it distracting here.
Report Inappropriate Content
If you find this review inappropriate and think it should be removed from our site, let us know. This report will be reviewed by Audible and we will take appropriate action.


text:
Season 7, Episode 10 Baby, It's Cold Outside
First Aired: November 13, 1978
Charles' winter coat is the envy of the camp during a cold snap; Hawkeye must treat a patient suffering from severe hypothermia. Baker: Jan Jorden. Patient: Teck Murdock. Patient: David Cramer. Driver: Terry Mills. Charles: David Ogden Stiers. Hawkeye: Alan Alda. Margaret: Loretta Swit. Gary David Goldberg's teleplay won a Writers Guild Award.
Guest Cast
Terry Wills Terry Wills Driver
Jan Jorden Jan Jorden Nurse Baker
David Cramer David Cramer Patient
Teck Murdock Teck Murdock Patient
Cast & Details See all »
- Premiered: September 17, 1972
- Rating: TV-PG
- Premise: A beloved, multi-Emmy-winning series about Army surgeons cutting up amid the Korean War. 'War is hell. So is TV,' said Larry Gelbart, who developed the series for TV from the 1970 Robert Altman film. ' 'M*A*S*H' and the medium,' Gelbart added, 'were made f… (more)
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M*A*S*H - Martinis and Medicine Complete Collection
By 20th Century Fox Home EntertainmentBuy New: $159.99
Gary Burghoff: To M*A*S*H and Back
By BearManor MediaBuy New: $19.95
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By Cumberland House PublishingBuy New: $15.70
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text:
...From my experience, I have found many creative ways of explaining common problems. I love getting to the point when the student finally understands the concept and tells me that they want to finish the problem on their own. I look forward to helping you with your academic needs.
Long Beach, CAView Tutor
...Since some classes combine Precalculus and Trigonometry, please also review my Trigonometry subject description. At the college level, I am familiar with Math 2 at SMC. With Trigonometry, it is easy to feel like you're going in circles, but I can help students understand the order of the Unit Circle and what the six trigonometric functions (Sin, Cos, Tan, Sec, Csc, and Cot) mean.
Culver City, CAView Tutor
...Regardless, I work with that student to be the best that they can be, which is usually much better than they even thought they could do on their own. With over 1,250 hours of tutoring with WyzAnt, I am proud of all that I have been able to give to my students and their feedback and responses are...
Carson, CAView Tutor
...By now it is expected to have solid algebra techniques developed in algebra I, which is where a lot of students need help. As geometry is commonly taken after algebra 1, it is a large deviation from previous topics. Because of this students are commonly confused at the beginning and might not recover well.
Glendora, CAView Tutor
...I believe in addressing each student's individual needs and/or learning disabilities to develop an effective tutoring program, emphasizing positive reinforcement. I work very well with children and adults alike and love to see the sudden light of understanding shine through my student's eyes.Whe...
Burbank, CAView Tutor


text:
List all words ending with biznaga
Only the word biznaga was found, nothing longer.
Some random words: eke cuvette luau krona veal isinglass wrack
This is not a dictionary, it's a word game wordfinder.
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text:
Chris Paul, Clippers rally from blown lead to top Isaiah Thomas, Kings
SACRAMENTO, Calif. -- Los Angeles Clippers point guard Chris Paul didn't let a slow start against the Sacramento Kings throw him off course.
A quick pep talk by coach Doc Rivers and some encouraging words from his teammates convinced Paul to keep jacking up shots until they started to fall.
Just like that, Paul's sizzling start to the season rolled on.
Paul had 26 points and 10 assists for his third straight double-double, and the Clippers came back after blowing a 15-point lead in the second half to beat the Kings 110-101 on Friday night.
"I came out a little slow and tried to let the game develop, but I can't be that way," Paul said. "I have to be more aggressive. Once I got more aggressive, that opened up things for everybody."
Blake Griffin added 20 points, 17 rebounds and six assists while reserve Jamal Crawford had 18 points for the Clippers, who have won two straight since a season-opening loss to the Lakers.
Six players scored in double figures for Los Angeles, which trailed 92-90 midway through the fourth quarter before going ahead for good on a 3-pointer by Paul. The Clippers point guard had nine points over the final six minutes, including four consecutive free throws to extend the lead to 108-101.
Paul got into it with Sacramento center DeMarcus Cousins. The two exchanged words and had to be separated in the first quarter after it appeared Paul tried to push on Cousins' face while the Kings center was on the ground.
Cousins later drew a technical in the fourth quarter after blocking a shot by Paul when he appeared to taunt the guard. Isaiah Thomas, who led the Kings with 29 points, also was hit with a technical foul while Los Angeles reserve Matt Barnes was called for a flagrant foul.
"It was a track meet and it was physical, too," Rivers said. "It had a little bit of everything."
The Clippers led most of the game and were ahead 66-51 early in the third quarter before the Kings made their best run of the night behind Thomas.
Thomas, Sacramento's diminutive backup point guard, scored seven points, including a driving layup as he crashed to the court. That helped the Kings trim the gap to single digits, and Travis Outlaw's tip-in following Cousins' missed 18-footer cut the Clippers' lead to 79-77 heading into the fourth quarter.
"I love the fact that we got back in the game and we didn't stop competing," Sacramento coach Michael Malone said. "But you can't beat a good team if you allow them to shoot 50 percent from the field and from the 3-point line."
A driving layup by Thomas tied the game at 90-all, and Jason Thompson's jumper gave the Kings their first lead since early in the first half.
It didn't last long.
Paul scored five straight points and fed DeAndre Jordan with an alley-oop pass for a dunk that gave Los Angeles a 97-94 lead.
Cousins, who finished with 24 points and 10 rebounds, scored on a short hook to pull the Kings within 102-99, but Jared Dudley and Paul made two free throws apiece to help the Clippers seal the win.
"I'm one of those people that let my teammates get me going, and I need that," said Paul, who shot 7-of-14 from the field. "Doc talks to me about it but it's my teammates that help me."
Los Angeles led comfortably until Sacramento's push in the second half.
Barnes and J.J. Redick made consecutive 3s as part of a 12-0 run by the Clippers midway through the first quarter. The Kings pulled even at 22-all on two free throws from Thomas before Crawford made a runner in the lane to give Los Angeles the early lead.
Crawford scored six of the Clippers' first nine points in the second quarter, and Griffin added four on a driving layup and two free throws to help Los Angeles take a 41-31 lead.
The Kings shot just 38.1 percent in the first half but pulled within 52-45 on a free throw by Thomas with 21.5 seconds left. Paul answered with a 15-footer to extend the Clippers' lead to nine at halftime.
Sacramento made it close in the second half but couldn't close out after taking a lead with just more than six minutes left.
"We have to get better on the defensive end," Cousins said. "They got going, and instead of us stopping the bleeding, we let them continue to do that. They didn't beat us. We beat ourselves."
Game notes
Paul is averaging 27.3 points through the first three games. ... Crawford was 7-of-10 from the field. ... Former NBA star and current Sacramento Mayor Kevin Johnson was among those seated courtside.
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Star Tracks
The sidelined soccer star spends his recovery time shopping with wife Victoria in Spain. Plus: J. Lo, Leonardo DiCaprio and more
Credit: Splash News
Published: Thursday Mar 08, 2007 | 05:10 PM EST
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Immelt: I Wish I Had Thought Of SolarCity (SCTY)
Published 12:53 pm, Tuesday, May 20, 2014
America is undergoing a twin energy boom. You may have heard about the shale revolution, which helped make natural gas plants the No. 1 new energy source in the U.S. last year.
Though not on the same scale, the rise of solar energy has been just as impressive. New photovoltaic and concentrated solar installations constituted the second-largest source of new energy in 2013, and the number of solar jobs in the U.S. climbed 20%, according to The Solar Foundation, making it one of the fastest-growing industries in the country.
With nearly a quarter of the residential installation market, Elon Musk's SolarCity has been at the vanguard of this movement, thanks to its leasing model and its financing strategy, which includes things like solar-backed bonds.
An infuriating series of scientific findings suggest an 'air of mystery' might help you get a date
Viacom owner Sumner Redstone's signature has changed, and it has people talking
Andrew Luck signs monster contract extension that will reportedly make him the highest paid player in football
Scientists predict that 60 percent of these miniature penguins could be gone by 2099
Markets are lifting off (SPY, SPX, DJI, IXIC, NKE, TLT, TLO, USD, DXY)
Still, as GigaOm's Katie Fehrenbacher reports, this could have been an opportunity that an established energy player like GE could have tapped — and GE is now acknowledging as much. She writes:
At the World Energy Innovation Forum at the Tesla factory in Fremont, Calif. this week, the CEO of GE, Jeff Immelt, said during an onstage interview that GE had focused so intently on how bad the solar panel business was that they "missed SolarCity." "My God I wish I had thought of that," said Immelt.
In its latest earnings presentation, SolarCity says it now expects to install a full gigawatt's worth of solar — or up t0 1 million homes — by 2015.
Join the conversation about this story »
See Also:
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SEE ALSO: How Solar Surged In America


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Monday, December 2, 2013
It's Tea-Time: Tasty Rosehip Tea
10 comments:
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- AnonymousApril 1, 2014 at 10:39 PM
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Teas are really good for our body. Good job Hui :)ReplyDelete
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text:
|Publication number
|Publication type
|Application number
|Publication date
|Dec 9, 2003
|Filing date
|Apr 7, 1998
|Priority date
|Apr 7, 1998
|Fee status
|Publication number
|Robert Dawson, Mark I. Gardner, Frederick N. Hause, H. Jim Fulford, Jr., Mark W. Michael, Bradley T. Moore, Derick J. Wristers
|Original Assignee
|Advanced Micro Devices Inc
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (9), Referenced by (25), Classifications (37), Legal Events (7)
|External Links: USPTO, USPTO Assignment, Espacenet
1. Field of the Invention
The present invention relates in general to semiconductor integrated circuit device structures and associated methods of fabrication. More particularly, the invention pertains to tri-level control transistors having segmented control gates.
2. Description of Related Art
An insulated-gate field-effect transistor (IGFET), such as a metal-oxide semiconductor field-effect transistor (MOSFET), uses a gate electrode to control an underlying surface channel joining a source and a drain. The channel, source and drain are located in a semiconductor substrate, with the channel being doped with a conductivity type opposite the conductivity type of the source and drain. The gate electrode is separated from the semiconductor substrate by a thin insulating layer such as a gate oxide. The operation of the IGFET involves application of an input voltage to the gate electrode, which sets up a transverse electric field in the channel in order to modulate the longitudinal conductance of the channel.
In typical IGFET processing, the source and drain are formed by introducing dopants of a second conductivity type (P or N) into the semiconductor substrate of a first conductivity type (N or P) using a patterned gate electrode as a mask. This self-aligning procedure tends to improve packing density and reduce parasitic overlap capacitances between the gate electrode and the source/drain regions.
Polysilicon (also called polycrystalline silicon, polysilicon-Si or polysilicon) thin films have many important uses in IGFET technology. One of the key innovations is the use of heavily doped polysilicon as the gate electrode in place of aluminum. Since polysilicon has the same high melting point as a silicon substrate, it can be deposited prior to source and drain formation, and serve as a mask during introduction of the source and drain regions by ion implantation. The resistance of polysilicon can be further reduced by forming a silicide on its top surface.
There is a relentless trend to miniaturize semiconductor dimensions. The number of IGFETs that can be manufactured on an integrated circuit chip can be increased by decreasing the horizontal dimensions. Resolution refers to the horizontal linewidth or space that a lithographic system can adequately print or resolve. Lithographic systems include optical projection and step and repeat equipment, and electron beam lithography equipment. In optical systems, for instance, resolution is limited by the equipment (e.g., diffraction of light, lens aberrations, mechanical stability), optical properties of the photoresist (e.g., resolution, photosensitivity, index of refraction), and process characteristics (e.g., softbake step, develop step, postbake step, and etching step).
Furthermore, scaling down the horizontal dimensions generally is attained by a corresponding decrease in the vertical dimensions. As IGFET vertical dimensions are reduced and the supply voltage remains nearly constant (e.g., 3V), the maximum channel electric field εymax near the drain tends to increase. If the electric field becomes strong enough, so-called hot-carrier effects may occur. For instance, hot electrons can overcome the potential energy barrier between the substrate and the gate insulator thereby causing hot carriers to become injected into the gate insulator. Trapped charge in the gate insulator due to injected hot carriers accumulates over time and can lead to a permanent change in the threshold voltage of the device.
A number of techniques have been utilized to reduce hot carrier effects. One such technique is a lightly doped drain (LDD). The LDD reduces hot carrier effects by reducing the maximum channel electric field εymax. Reducing the electric field on the order of 30-40% can reduce hot-electron-induced currents by several orders of magnitude. The drain is typically formed by two ion implants. A light implant is self-aligned to the gate electrode, and a heavy implant is self-aligned to the gate electrode on which sidewall spacers have been formed. The spacers are typically oxides or nitrides. The purpose of the lighter first dose is to form a lightly doped region of the drain (or LDD) at the edge near the channel. The second heavier dose forms a low resistivity region of the drain, which is subsequently merged with the lightly doped region. Since the heavily doped region is farther away from the channel than a conventional drain structure, the depth of the heavily doped region can be made somewhat greater without adversely affecting the device characteristics. The lightly doped region is not necessary for the source (unless bidirectional current is used), however LDD structures are typically formed for both the source and drain to avoid the need for an additional masking step.
Disadvantages of LDDs are their increased fabrication complexity compared to conventional drain structures, and parasitic resistance. LDDs exhibit relatively high parasitic resistance due to their light doping levels. During operation, the LDD parasitic resistance can decrease drain current, which in turn may reduce the speed of the IGFET.
In the manufacture of integrated circuits, the planarization of semiconductor wafers is becoming increasingly important as the number of layers used to form integrated circuits increases. For instance, the gate electrode and/or metallization layers formed to provide interconnects between various devices may result in nonuniform surfaces. The surface nonuniformities may interfere with the optical resolution of subsequent lithographic steps, leading to difficulty with printing high resolution patterns. The surface nonuniformities may also interfere with step coverage of subsequently deposited metal layers and possibly cause open circuits.
Accordingly, a need exists for an IGFET that can be manufactured with reduced horizontal dimensions, that preferably includes an LDD with reduced parasitic resistance as well as a substantially planar top surface. It is especially desirable that the IGFET have a channel length that can be significantly smaller than the minimum resolution of the available lithographic system.
A transistor is formed in an active area having a segmented gate structure. The segmented gate structure advantageously provides for dynamic control of a channel region formed within the transistor.
In accordance with an embodiment of a method for fabricating a transistor, lightly doped source and drain (LDD) regions are formed aligned to a gate electrode. After forming an insulating layer adjacent the exposed surfaces of the gate electrode, conductive spacers are formed disposed overlying the LDD regions. These spacers are electrically isolated from the gate electrode by the insulating layer. Heavily doped source and drain (S/D) regions are formed which are aligned to the spacers and make electrical contact, for example through a salicide process, supplied to the conductive spacer, the gate electrode, and the S/D regions. The described structure advantageously supplies dynamic control of the channel region through dynamic, independent control of the LDD portions of the S/D regions.
In some embodiments, the tri-level control transistors are controlled to have a gate electrode modify the drain potential of a transistor. In still other embodiments, the tri-level control transistors allow independent bias of the main gate electrode and source/drain regions. Independently biasing the gate electrode and source/drain regions permits precise control of transistor performance to improve transistor reliability and enhance operating speed.
Many advantages are attained by the described semiconductor integrated circuit and associated fabrication method. The semiconductor integrated circuit attains a reduced surface area through active area isolation by shallow trench isolation (STI) and electrical contacts formed to S/D regions within the STI region.
The features of the described embodiments believed to be novel are specifically set forth in the appended claims. However, embodiments of the invention relating to both structure and method of operation, may best be understood by referring to the following description and accompanying drawings. For ease of understanding and simplicity, common numbering of elements within the illustrations is employed where the element is the same between illustrations.
FIGS. 1A, 1B, 1C, 1D, 1E, 1F, 1G, and 1H are simplified cross-sectional views of embodiments at a plurality of steps in a fabrication process.
FIG. 2 is a schematic block diagram illustrating a computer system including an integrated circuit including vertical transistors with spacer gates fabricated using a method as depicted in FIGS. 1A through 1H.
Embodiments of the present invention are described with reference to the aforementioned figures. These drawings are simplified for ease of understanding and description of embodiments. Various modifications or adaptations of specific methods and or structures may become apparent to those skilled in the art. Various suitable modifications, adaptations or variations that rely upon the disclosure herein, and through which these teachings have advanced the art, are considered to be within the spirit and scope of the present invention. For example, referring to FIGS. 1A through 1H, while substrate 10 is shown with a minimum of detail for ease of understanding, typically substrate 10 is tailored to maximize the yield and performance of semiconductor circuitry formed therein. Therefore, while in some embodiments of the present invention substrate or wafer 10 is a silicon wafer as is depicted in FIG. 1A, in other embodiments substrate 10 has an epitaxial silicon layer disposed thereon and in still other embodiments substrate 10 is a silicon bonded wafer structure such as used for fabrication of Silicon On Insulator (SOI) circuits. Thus, substrate 10 can be any structure known to those of ordinary skill in the art to be suitable for semiconductor device fabrication.
Referring to FIG. 1A, an early step in the fabrication of a semiconductor device is depicted. Semiconductor substrate or wafer 10 has isolation regions 14 formed in the substrate 10. Isolation regions 14 are depicted as being formed using a Shallow Trench Isolation (STI) technique. However, in other embodiments other isolation schemes, such as any of the LOCalized Oxidation of Silicon (LOCOS) schemes, are employed. While isolation regions 14 appear in FIG. 1A as two distinct regions, other views and other embodiments may have a different structure. For example, the appearance result from the particular cross-sectional view employed. In addition, in some embodiments more than one type of isolation scheme can be used to form active area region 12. Thus the nature of the isolation structure selected is a design choice, and any such design choice is meant to fall within the scope and spirit of the present disclosure.
The active area region 12 is depicted in FIG. 1A between and adjacent to the two isolation regions 14. Gate dielectric layer 20 is formed overlying wafer 10 in general and active area 12 specifically. The gate oxide layer 20 is typically a silicon dioxide (oxide) layer that is formed by a thermal oxidation process using a known suitable thermal oxidation processes. In some embodiments other materials, such as oxynitrides and nitrogen (N2) bearing oxides, are employed to form gate dielectric 20. The thickness for the gate oxide layer 20 is chosen based on the gate material and the specific application for the device. For example, a silicon dioxide gate oxide layer 20 typically has a thickness in a range between approximately 25 Å and 250 Å. Once the gate oxide layer 20 is formed, a gate electrode 30 is fabricated using a known suitable fabrication method. Typically, the gate electrode 30 is formed by deposition and a pattern and etch process. First, a polysilicon layer (not shown) with a thickness of between approximately 1000 Å and 3000 Å is deposited using a deposition process such as a low pressure Chemical Vapor Deposition (LPCVD) process. A photoresist layer (not shown) is patterned and used as an etch mask for an RIE etch process that forms the electrode 30. While the specified thickness range for the gate electrode 30 is desirable, other thicknesses outside the specified range may also be appropriate. The choice of a thickness for the gate electrode 30 is a design choice from among known suitable choices.
Referring to FIG. 1B, the gate electrode 30 is oxidized to form an isolation layer 34. An implant operation forms lightly doped source and drain (LDD) regions 42 and 44, respectively. The isolation layer 34 is typically a silicon dioxide layer, approximately 50 Å to 1000 Å or greater in thickness, and is formed by thermal oxidation of a portion of polysilicon gate electrode 30. However, the gate electrode layer 30 may otherwise be formed using a deposition process that results in a conformal silicon oxide film, or using a combination of oxidation and deposition processes. The isolation layer 34 supplies electrical isolation between the gate electrode 30 and segmented gate portions shown in FIG. 1C that are formed in subsequent process steps. The thickness and physical integrity of layer 34 determine the performance of the device. In addition, the thickness of isolation layer 34 is a factor in successfully employing a subsequent salicide process (see FIG. 1E) for electrical contact to each gate segment.
LDD regions 42 and 44 are typically formed using an ion implant 40 process. If the active area 12 is formed in P-type silicon, the ion implant 40 operation forms N-type regions 42 and 44. If the active area 12 is formed in N-type doped silicon, the ion implant 40 operation forms P-type regions 42 and 44. The specific N and P-type dopants that are selected are not essential to fabrication of described embodiments. Design choices may be made from among known suitable dopants.
Referring now to FIG. 1C, polysilicon spacers 36 are shown formed adjacent isolation layer 34, and implant 50 is shown forming heavily doped regions 52 and 54. Once formed, heavily doped regions 52 and 54 combine with LDD regions 42 and 44 to form S/D regions 62 and 64 respectively. In addition, S/D regions 62 and 64 define transistor channel region 66 as indicated.
Techniques for the formation of spacers, such as dielectric spacers and polysilicon spacers, adjacent a gate electrode are well known. Although the polysilicon spacers 36 of the illustrative embodiment are not dielectric, the basic process sequence employed for spacer formation is essentially unchanged from the process for forming dielectric spacers. In particular, a second polysilicon layer (not shown) having a predetermined thickness is deposited overlying the device structure shown in FIG. 1B. The overlying polysilicon layer etched back to form the polysilicon spacers 36 typically having a width 38 slightly less than the thickness of the second polysilicon layer. In the illustrative embodiment, the polysilicon spacers 36 are formed to dynamically control the profile of a channel 66. The width of the polysilicon spacers 36 is to be sufficient to achieve a desired amount of dynamic control.
Dynamic channel control is achieved through biasing voltages applied to electrical contacts to the polysilicon spacers 36. The width 38 of the polysilicon spacers 36 is set to a sufficient dimension to supply a suitable electrical contact. Typically, the minimum dimension for width 38 is determined by the minimum contact geometry or the minimum overlay capability of the lithography equipment. The determination of width 38 and thickness that are suitable for the second polysilicon layer depends both on the desired amount of dynamic channel control and the process design rules for the fabrication process.
Referring to FIG. 1D, a semiconductor device is depicted during fabrication following an optional oxide strip and reoxidation step. The oxide strip operation is typically performed using a short wet etch process in a buffered HF solution so that all of the silicon oxide overlying the gate electrode 30 and doped regions 52 and 54 is removed. The wet etch process does not remove the isolation layer 34 between the gate electrode 30 and the polysilicon spacers 36, and does not remove the portion of the gate oxide layer 20 underlying the gate electrode 30 and the polysilicon spacers 36.
The reoxidation operation grows an oxide layer 35 on the polysilicon spacers 36 and the gate electrode 30. In addition, the reoxidation operation increases the spacing between the polysilicon spacers 36 and the gate electrode 30 indicated in a highlighted area 1. The reoxidation operation also increases the spacing between the polysilicon spacers 36 and the wafer 10 indicated in highlighted area 2.
The mechanism of the increase in spacing in the highlighted areas is not critical to the practice of described embodiments. However, the increase in spacing is conjectured to result from oxygen diffusion through the silicon oxide of layer 34 and the gate oxide layer 20 in a manner similar to the diffusion that occurs in LOCOS isolation schemes, producing the "bird's beaks" characteristic of LOCOS schemes.
Referring to FIG. 1E, source/drain (S/D) silicide contact regions 72 and 74 are shown overlying a portion of S/D regions 52 and 54, respectively. A gate silicide contact region 70 overlies the gate electrode 30 and a spacer silicide contact region 76 overlies each polysilicon spacer 36. In some embodiments, the silicide contact regions are formed by a salicide process. A salicide is a self-aligned silicide. A metal that reacts with silicon to form a metal silicide is deposited over the entire surface of the wafer 10. The wafer 10 is then heated to a temperature sufficient to induce the metal-silicon reaction such that only the metal in contact with silicon reacts to form the metal silicide. Metal that is not in contact with silicon remains unreacted and is removed without affecting the metal silicide regions. In this manner, the exposed silicon pattern is precisely reproduced in metal silicide and is self-aligned to the silicon pattern. However, the salicide process utilizes a minimum separation between regions of exposed silicon to be effective. The minimum separation distance, while depending on a variety of factors such as the specific metal selected, reaction time, and temperature, is often in the range of approximately 50 nm. While titanium (Ti) is a suitable choice for the salicide process, other metals, for example metals included in Group VIII of the Periodic Table, are alternate choices from among known suitable choices.
The described optional reoxidation step is not necessary to realize the advantages of the described embodiments. In some embodiments, the spacing for a salicide process to form contact regions 70, 72, 74 and 76 is determined by choosing an appropriate thickness for the gate oxide layer 20 and the isolation layer 34. In other embodiments, an oxidation of the structure depicted in FIG. 1C is performed without initially removing exposed portions of layers 20 and 34. Alternatively, contact regions 70, 72, 74 and 76 are formed using a photolithographic and etch process to define contact openings (not shown) in an overlying silicon oxide layer.
Referring to FIG. 1F, a blanket layer of silicon oxide (SiO2) 80 is formed over the substrate 10 and covers the gate electrode 30 and the polysilicon spacers 36 of the semiconductor device. The oxide layer 80 with a thickness in the range of 5000 Å to 20000 Å is conformally deposited over the substrate 10 by chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD) at a temperature in the range of 300� C. to 400� C. Deposition is followed by a chemical-mechanical polish (CMP) operation to planarize the substrate surface.
Referring to FIG. 1G, a contact via-defining photoresist mask is patterned over the oxide layer 80. The contact via-defining photoresist mask is deposited in a continuous layer on the oxide layer 80 and irradiated using the photolithographic system to form a predefined two-dimensional image pattern on the horizontal planar surface of the oxide layer 80. The contact via-defining photoresist mask defines a plurality of contact vias 82 for accessing and forming electrical connections to selected regions of the semiconductor device through the oxide layer 80. In the illustrative embodiment, contact vias 82 are formed for contacting the gate electrode 30 and the polysilicon spacers 36 through the oxide layer from an interconnect layer (not shown). The contact via-defining photoresist mask is developed and irradiated portions of the mask are removed to expose the oxide layer 80 overlying the prospective locations of the contact vias 82. In the illustrative embodiment, the contact via-defining photoresist mask forms some contact vias 82 that extend essentially across that lateral dimension of a spacer and other contact vias extending over a portion of the gate electrode 30.
The oxide layer 80 is etched using a reactive ion etch (RIE) that etches the contact vias 82 to the surface of the substrate 10. The reactive ion etch (RIE) etches the oxide layer 80 and portions of the polysilicon spacers 36 that are exposed by the contact via-defining photoresist mask.
Referring to FIG. 1H, metal interconnects 84 form electrical connections to the gate electrode 30, the polysilicon spacers 36, and the S/D regions 80 with the metal serving as a conductor. The metal interconnects 84 are connected to interconnect structures (not shown) in an interconnect layer overlying the oxide layer 80 to form a connection to an interconnect structure selectively connecting multiple transistors including biasing connections to the conductive polysilicon spacers 36. In an illustrative embodiment, the metal interconnects 84 are formed by first depositing a titanium sacrificial barrier 86 into the contact vias 82 in contact with the gate electrode 30, the polysilicon spacers 36, and the S/D regions 52, 54 of the substrate 10. Titanium films are used as a diffusion barrier since titanium (Ti) is an oxygen-gettering material and oxide-reducing agent. Accordingly, titanium dissolves a native oxide layer on the silicon surface of the gate electrode 30, the polysilicon spacers 36, and the S/D regions 52, 54 during annealing and adheres well to both silicon and oxide (SiO2). In addition, titanium forms good ohmic contacts to heavily-doped silicon whether the doping is N-type doping or P-type doping. The illustrative structure advantageously facilitates circuit arrangements in which the sources of two or more transistors are connected.
In the illustrative embodiment, the metal interconnects 84 form a tungsten (W) interconnect. The titanium sacrificial barrier 86 between the polysilicon of the gate electrode 30, the polysilicon spacers 36, and the S/D regions 52, 54 of the substrate 10 and the tungsten metal interconnects 84 function as a sacrificial barrier through the reaction of titanium with silicon to form titanium-silicide. The titanium sacrificial barrier 86 is formed by depositing a very thin layer of titanium onto the gate electrode 30, the polysilicon spacers 36, and the substrate 10 including deposition into the contact vias 82. The wafer 10 is annealed to react the titanium with the silicon in the undoped polysilicon, thereby forming TiSi2. The titanium is deposited as a very thin layer to avoid absorption of dopants from undoped polysilicon during formation of TiSi2.
Following the formation of the titanium sacrificial barrier 86, a titanium nitride (TiN) passive barrier 88 is formed over the titanium sacrificial barrier 86. The TiN passive barrier 88 serves as a contact diffusion barrier in silicon integrated circuits by operating as an impermeable barrier to silicon and by virtue of a high activation energy for the diffusion of other impurities. TiN has a high thermodynamic stability and a relatively low electrical resistivity of transition metal carbides, borides or nitrides. The TiN passive barrier 88 is formed using one of multiple techniques. For example, the TiN passive barrier 88 is formed by: (1) evaporating titanium in a nitrogen (N2) ambient, (2) reactively sputtering the titanium in an argon (Ar)-nitrogen (N2) mixture, (3) sputtering from a TiN target in an inert argon ambient, (4) sputter depositing titanium in an argon (Ar) ambient and converting the titanium to TiN is a separate plasma nitridation step, or (5) chemical vapor deposition (CVD).
The tungsten metal interconnects 84 are formed by chemical vapor deposition (CVD) of tungsten in a low pressure CVD reactor. Typically tungsten hexafluoride WF6 used as a source gas for reduction by hydrogen or silicon in a two-step process. In a first step, the tungsten source is reduced by silicon typically from silane (SiH4) or dichlorosilane (SiCl2H2) to form a layer of tungsten approximately 100 Å thick. In a second step, hydrogen H2 reduction is performed to deposit additional tungsten only on the tungsten layer formed in the first step. The metal interconnects 84 are formed in the contact vias 82 over the titanium sacrificial barrier 86 and the TiN passive barrier 88 by silicon reduction of tungsten hexafluoride WF6 leaving solid tungsten, silicon fluoride vapor, and sometimes hydrogen fluoride vapor.
Once the metal interconnects 84 are formed, chemical-mechanical polishing (CMP) is used to planarize the oxide and metal surface overlying the substrate 10. CMP creates a smooth, planar surface for intermediate processing steps of an integrated circuit fabrication process and removes undesirable residues that remain from other substrate processing steps. CMP involves simultaneous chemically etching and mechanical polishing or grinding of a surface so that a combined chemical reaction and mechanical polishing removes a desired material from the substrate surface in a controlled manner. The resulting structure is a planarized substrate surface with any protruding surface topography leveled. CMP is typically performed by polishing a substrate surface against a polishing pad that is wetted with a slurry including an acidic or basic solution, an abrasive agent and a suspension fluid.
The metal interconnects 84 may be formed of metals other than tungsten. Tungsten advantageously tolerates high temperatures that occur during annealing.
Referring to FIG. 2, a computer system 200 includes an integrated circuit 202, a central processing unit 204, a memory 206, and an interface 208, and sometimes connected to a modem 210. The computer system 200 also includes a keyboard 212 and a display 214 forming a user interface.
While the invention has been described with reference to various embodiments, the embodiments are illustrative and that the scope of the invention is not limited to them. Many variations, modifications, additions and improvements of the embodiments described are possible. For example, those skilled in the art will readily implement the steps necessary to provide the structures and methods disclosed herein, and will understand that the process parameters, materials, and dimensions are given by way of example only and can be varied to achieve the desired structure as well as modifications which are within the scope of the invention. Variations and modifications of the embodiments disclosed herein may be made based on the description set forth herein, without departing from the scope and spirit of the invention as set forth in the following claims.
|Cited Patent
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|Self-aligned overlap MOSFET and method of fabrication
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|Integrated circuit degradation resistant structure
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|Motorola, Inc.
|Insulated gate semiconductor device and method of fabricating
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|Combined JFET and MOS transistor device, circuit
|Jan 10, 1997
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|Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon
|Feb 26, 1993
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|MIS transistor with gate sidewall insulating layer
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|Semiconductor fabrication process with asymmetrical conductive spacers
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|Method and system for controlling the presence of fluorine in refractory metal layers
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|Texas Instruments Incorporated
|Integration scheme for using silicided dual work function metal gates
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|Transistor with independent gate structures
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|In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability
|Jun 28, 2001
|Jan 3, 2002
|Faust Richard A.
|In-situ co-deposition of Si iN diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability
|May 10, 2002
|Sep 19, 2002
|Rudeck Paul J.
|Modified source/drain re-oxidation method and system
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|Jul 15, 2004
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|Low-GIDL MOSFET structure and method for fabrication
|Apr 6, 2004
|Sep 23, 2004
|Rudeck Paul J.
|Modified source/drain re-oxidation method and system
|May 21, 2004
|Oct 28, 2004
|Salman Akram
|Device isolation for semiconductor devices
|Apr 30, 2003
|Nov 4, 2004
|Leo Mathew
|Semiconductor fabrication process with asymmetrical conductive spacers
|May 22, 2003
|Nov 25, 2004
|Leo Mathew
|Transistor with independent gate structures
|Oct 13, 2004
|Sep 29, 2005
|Hirotaka Komatsubara
|Semiconductor device and manufacturing method thereof
|Apr 5, 2004
|Oct 6, 2005
|International Business Machines Corporation
|A low thermal budget (mol) liner, a semiconductor device comprising said liner and method of forming said semiconductor device
|May 20, 2004
|Nov 24, 2005
|Texas Instruments, Incorporated
|Integration scheme for using silicided dual work function metal gates
|Aug 8, 2005
|Dec 8, 2005
|Rudeck Paul J
|Modified source/drain re-oxidation method and system
|Jun 11, 2004
|Dec 15, 2005
|International Business Machines Corporation
|Low capacitance fet for operation at subthreshold voltages
|Jan 10, 2006
|Jun 8, 2006
|Yang Haining S
|Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern
|Apr 27, 2006
|Aug 24, 2006
|Oki Electric Industry Co., Ltd.
|Manufacturing method for semiconductor device
|May 15, 2008
|Oct 9, 2008
|International Business Machines Corporation
|Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern
|Aug 5, 2014
|Feb 10, 2016
|Nxp B.V.
|Semiconductor device
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Apr 7, 1998
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|Certificate of correction
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Sonu Sood does a cameo for a Pakistani filmAfter shooting for an Indo-Chinese film with Hollywood actor Jackie Chan, Sonu Sood will soon be seen in a Pakistani film. The Bollywood hunk has done a cameo for a romcom titled 'Ishq Positive', which features Wali Hamid Ali, who is also a singer ... Times of India, 4 hours ago
IIFA Awards 2016: Sonu Sood Talks About Working With Jackie Chan - News18.com, 1 day ago
Jackie Chan grooves to Punjabi number at Shanghai Festival - Business Standard, 1 week ago
2,308 images for chan
The Handmaiden pulls in 4 million
Award-winning director Park Chan-wook's The Handmaiden has attracted more than 4 million viewers so far. The film, which opened in local theaters on June 1, has attracted 4,005,806 moviegoers by Saturday, according to the Korean Film Council on ...Korea Herald, 16 hours ago Destiny's dictates The Financial Chronicle, 1 month ago
Cambodia opposition leader, speaking at refuge, says PM is scared
By Prak Chan Thul PHNOM PENH (Reuters) - After a month living in an office at his party's headquarters to avoid arrest, Cambodian opposition leader Kem Sokha remains defiant and said Prime Minister Hun Sen is scared of losing the 2018 election. ...Yahoo! UK and Ireland, 21 hours ago
Salman Khan rape remark: Mistakes happen, says Sonu Sood
The actor will be seen sharing screen with Jackie Chan in 'Kung Fu Yoga'DNA, 1 day ago Sonu Sood on Salman Khan's comments: Mistakes happen Times of India, 1 day ago Mistakes happen: Sonu Sood on Salman's comments Press Trust of India, 1 day ago
More from: ABP Live, Siasat Daily...and 3 other sources
Thailand pledges to protect rights of Myanmar migrants
BANGKOK -- Myanmar State Counselor Aung San Suu Kyi and Thai Prime Minister Prayuth Chan-ocha signed an agreement on Friday to safeguard the basic rights of migrant workers from Myanmar. "We both agreed that the Thai private sector and Myanmar ...Nikkei Asian Review, 2 days ago Group eyed to study repatriation of Myanmar refugees Brunei Times, 1 day ago Prayut, Suu Kyi pledge to help Myanmar workers Bangkok Post, 2 days ago PM proposes joint working group to study repatriation News EasyBranches.com, 1 day ago
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Axis Bank, KBank of Thailand ink pact for trade, investment
Agreement between the two banks were signed as the Thailand Prime Minister Prayut Chan-o-cha is on a three-day visit to India Press Trust of India | New Delhi June 17, 2016 Last Updated at 19:59 IST An employee speaks on his mobile phone as he walks inside ...Business Standard, 1 week ago Invest more, Thailand tells Indian Inc DNA, 1 week ago Thai PM Chan-ochan arrives in India for three-day visit First Post.com, 1 week ago Thai PM arrives; to hold talks with Modi tomorrow Business Standard, 1 week ago
More from: DNA, Business Standard...and 5 other sources
From legend of Rama to wisdom of Buddha, India shares common cultural heritage with Thailand: PM Modi
New Delhi: Prime Minister Narendra Modi today reminded the visiting Thailand PM Prayut, Chan-o-cha that the two countries share a common cultural heritage. "From the Legend of Rama to the Wisdom of Buddha our ties are...IndiaTV News, 1 week ago PM Modi to hold talks with Thai counterpart Sify, 1 week ago PM Narendra Modi to host Thai counterpart Prayut Chan-o-cha today; discussion on South China Sea likely Zee News, 1 week ago PM Modi to host Thai counterpart Prayut Chan-o-cha today Rediff.com, 1 week ago
PM of Thailand Prayut Chan-o-cha meets with Vice President Hamid Ansari
June 20, 2016 India , Photos Leave a comment Prime Minister of the Kingdom of Thailand, General Prayut Chan-o-cha (R) calling on the Vice President, M. Hamid Ansari, in New Delhi on Friday.Siasat Daily, 6 days ago India, Thailand to deepen maritime, defence ties Asian Age, 1 week ago India, Thailand to forge close ties in defence, cyber security, economy Rediff.com, 1 week ago India, Thailand to speed up free trade agreement talks MSN India, 4 days ago
More from: , Prokerala...and 1 other sources
Australia PM urges voters to support coalition
By Gabrielle Chan /Guardian News & Media Malcolm Turnbull has used the win by the leave campaign to warn that the result could cause a shock and he has urged Australians to vote for the Coalition government's strong economic leadership. ...Gulf Times, 2 days ago
Prayut presents 2017 deficit budget to NLA [Bangkok Post, Thailand]
June 23--Prime Minister Prayut Chan-o-cha presented his government's 2.73 trillion baht budget for fiscal 2017 to the National Legislative Assembly on Thursday, admitting that fast rising costs were limiting projects and will require cuts to the ...Bloomberg, 3 days ago National Budget for the 2017 Fiscal Year The Government Public Relations Department, 2 days ago
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June 16, 2016
'Hamilton' trio to accept National Archives Foundation award
The creator and star of the musical "Hamilton" will appear alongside two other creative forces of the Broadway smash at the ...
June 16, 2016
Bradley Cooper to produce Stand Up To Cancer telecast
Bradley Cooper is throwing his weight behind a Stand Up To Cancer telecast, serving as executive producer for the fundraiser ...
June 10, 2016
Private Buffett lunch goes to highest bidder for over $3.4M
For the second time, an anonymous bidder has agreed to pay more than $3.4 million for a private lunch with billionaire Warren ...
June 08, 2016
Illinois community center finds $19,000 donation from Pryor
A central Illinois community center where Richard Pryor made his first performance as a child has received $19,000 from the ...
June 02, 2016
Review: Train faithfully, needlessly cover 'Led Zeppelin II'
Train, "Does Led Zeppelin II" (Crush Music/Atlantic) Train's "Does Led Zeppelin II" is a faithful, needless cover of the ...
June 01, 2016
10 Things to Know for Today
Your daily look at late-breaking news, upcoming events and the stories that will be talked about today: 1. SIGNALS REPORTEDLY ...
May 30, 2016
Glass House to host more arts, outreach programs on grounds
The museum that operates the Glass House, the internationally known modernist landmark designed by architect Philip Johnson, ...
May 18, 2016
NASCAR champion Johnson gets animated for Nickelodeon
From cars to cartoons, Jimmie Johnson's next dash at the track comes in animated form. The six-time NASCAR champion lends his ...
May 12, 2016
Nothing to learn from Trump's taxes? Experts beg to differ
Donald Trump told The Associated Press this week "there's nothing to learn" from all those income tax returns he won't ...
May 12, 2016
Departing chair leaves $55M to Curtis Institute of Music
The departing chairwoman is leaving Philadelphia's Curtis Institute of Music with quite a parting gift: $55 million. Philly.
May 11, 2016
What's in Trump's returns? A look at how he plays tax game
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May 09, 2016
US creating pink commemorative coin to fund cancer research
U.S. officials are developing a new, pink commemorative coin to promote breast cancer awareness and raise money for cancer ...
May 05, 2016
Tourists use Alaska homeless shelter to grab coffee, snack
Cruise ship passengers have been hanging out at an Alaska homeless shelter to get free coffee and a bite to eat, but few have ...
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Saoirse Ronan to host Irish Rep gala of 'Finian's Rainbow'
The Irish Repertory Theatre has tapped a star of the Emerald Isle to host a gala benefit performance of "Finian's Rainbow" ...
April 15, 2016
Obama's income fell to $436,000, lowest of his presidency
President Barack Obama's income fell to just over $436,000 in 2015, the lowest of his presidency, and he and first lady ...
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Devon Still reflects on life, daughter Leah's cancer journey
Leah Still is a lively, outgoing 5-year-old who's looking forward to some special things. Her dad, Houston Texans defensive ...
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Taking a Deeper Look at the Presidential Race
I figured I'd do a look through every platform, proposal, and plan that the current candidates have, and give my take on them. While Wild … preberi več »
Hey everyone, it's been a time. I was last spotted playing or writing in this game around 400 days ago, giving quite a bit of emphasis if I recall correctly. While I may or may not be fully returning, I can't deny that this game has a lot of appeal… preberi več »


text:
With the NFL combine coming up, Steve Muench of Scouts Inc., took a look at three players who could see their draft stock increase dramatically with a strong performance. His list of three includes former Washington running back Chris Polk.
Muench on Polk:
Polk is coming off a somewhat underwhelming performance at the Senior Bowl, where he didn't look as quick as he appears on film, so running well in Indianapolis would help Polk regain some momentum. He's said he expects to run in the 4.4-second range in the 40, which would be well below the four-year combine average (4.60) for running backs.
The link also includes a very cool, behind-the-scenes video of former USC offensive tackle Matt Kalil training for the combine, plus five additional players to keep an eye on, including former Arizona State defensive back Omar Bolden, who enters the workouts with some medical questions.


text:
Relevant offers
I have been to Southland. One thing that stood out - the incredible number of rotting hovels in the area.
OPINION: Southland small towns, Invercargill itself - even the ''posh'' areas.
Many were locally owned, many were lived in. Some were rentals.
I have never seen it anywhere - except the student rental zone in Dunedin.
You see reports of, say, the poor zones in Auckland and shabby houses. Car wrecks on lawns, rubbish around . . . but not falling down, rotted-out ruins. There have been one or two, but it is rare to see. In Southland it is common as dirt.
I have a theory, and saw this first-hand while there.
A house is advertised, in need of work, and an out-of-town person buys it sight unseen as in one case.
They think of ''needs work'' as in shabby - not completely falling apart to the extent even the demolition guys down South aren't interested.
Why are they like that in the first place? Beats me. Seems a lot of Southland home owners don't believe in upkeep.
- The Southland Times
Sponsored links
Haast to Hollyford road project heads to its battleground
Letters to the editor - July 1, 2016
Call to rename State Highway 1 won't get traction
Letters to the editor - June 29
Moko's killers face huge infamy atop their penalty
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Getting personal over all that poisoning
Star Spangled Kiwi: Lost in translation
Letters to the editor - June 22
Letters to the editor - June 21
Letters to the editor - June 20
Man dressed as woman allegedly assaults another man in Dunedin
Deportation order cancelled for Invercargill mum Clarissa Garces
Southland businesses join forces to empower women
Reports of 15 crashes after frosty morning
Girls' High, St Mary's Men and Ex-High remain unbeaten in Southland-wide netball league
Homeless shelter to open in Invercargill
Invercargill teen on star-studded flag panel
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Cue TV turns off transmissions
Southland Sharks coach Paul Henare wants to go out with a bang
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Man dressed as woman allegedly assaults another man in Dunedin
The tiny South Otago town with the big heart
Reports of 15 crashes after frosty morning
Deportation order cancelled for Invercargill mum Clarissa Garces
Two dogs killed after being attacked by other dogs in Invercargill


text:
Oregon won the Pac-12 tournament on Saturday night, earning an automatic bid to the NCAA tournament, where the Ducks were slotted as the No. 12 seed in the Midwest bracket. They will play Thursday in San Jose, Calif., against Oklahoma State in a second-round game.
Mailbag: Questioning Oregon's 'decline'
2dTed Miller
Former Oregon defenders looking to make NFL mark
3dTed Miller
The games where 10 players can cement their Heisman candidacy
3dAdam Rittenberg
Ranking Pac-12's defensive triplets: No. 11 Oregon
5dChantel Jennings
Ten players who could play their way into the Heisman Trophy mix
21hAdam Rittenberg
Better know a nonconference opponent: Virginia
5dChantel Jennings
QB Vernon Adams to use CFL as a launchpad
3dKevin Seifert
Better know a nonconference opponent: Nebraska
10dChantel Jennings
Quarterback the big Pac-12 question entering 2016
11dDavid Lombardi
New Oregon QB coach David Yost has a decision to make
11dChantel Jennings
Stat burns: Each top 25 team's best number to brag about
12dChris Fallica, Bryan Ives, Sharon Katz and Paul Kinney


text:
|Sent on:
|Thursday, December 2, 2010 3:55 PM
We've been going on sundays for brunch with the kids.? We'll be there this coming Sunday again, but my SO works saturdays.? :(
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Maritime Today
The Maritime Industry's original and most viewed E-News Service
Global excess oil supply still looks likely to average 0.5m bpd in 2016 – sufficient, it would seem, to stop oil prices rising much above $50/bbl and therefore
Britain's BP Plc this month received a Venezuelan crude cargo from state-run PDVSA, according to Thomson Reuters trade flows data, the first since the companies
Oil prices surged 4 percent on Wednesday, with Brent settling above the psychological $50 a barrel mark, after a larger-than-expected drawdown in U.S. crude inventories.
The American Waterways Operators (AWO) and ClassNK have signed an agreement under which ClassNK will be authorized to conduct audits of AWO's Responsible Carrier Program,
The U.S. Coast Guard has opened the Red River from mile marker 40 to mile marker 42 for vessel traffic, Monday.
The Red River had been closed due to a barge that had run aground at mile marker 41,
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Lloyd's Register (LR) announced it


text:
Trouble in Paradise "Ellecil" recalls the dark days when our presidents were of questionable ethics. Wait a minute...
"LonelyKing" looks forward to the good days just around the corner:
I don't see what's wrong with this "Hi-Standard" picture. I'd be happy if my new dad was a robot
"Xealot" unwraps a surprise! I love surprises.
We clear up the BREXIT for confused Americans wondering why the global economy is collapsing this time.
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Insanely twisted and messed up stick figure families... holy sh*t...
with a slight motion of his hands, he appeared to remove and then reattach his thumb repeatedly
Mission: Unwatchable, now in glorious Italian 3D!
Photoshop Phriday showcases the tremendous image manipulation talents of the Something Awful Forum Goons. Each week they tackle a new theme, parodying movies, video games, comics, history, and anything else you can think of. If you want in on the action, join us on the Something Awful Forums!
Copyright ©2016 Rich "Lowtax" Kyanka & Something Awful LLC.


text:
Is America's Next Generation Out Of Luck?
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