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Ogden Women
1. Mindful Women SpaServices
1525 E 6000 S Ste BOgden, UT 84405
From Business: Welcome to Mindful Medical & Spa where we dedicate ourselves to the awakening, the balancing and transforming of ourselves, our clients and our community. We believ…
2. Where Women Create
215 25th StOgden, UT 84401
3. Circle Of Life Womens Center
1525 E 6000 SOgden, UT 84405
From Business: At Circle of Life Womens Center in South Ogden, Utah, we provide a full range of services for women's health care. Our practice has grown from its founding by Dr. J…
4. Monarch Women's Cancer Center - Ogden
5405 S 500 E Suite 203Ogden, UT 84405
From Business: The Monarch Women's Cancer Center provides care to women and their families.
5. Mc Kay-Dee Women's & Childrens
4401 Harrison Blvd # 4Ogden, UT 84403
6. Women's Center At McKay
4403 Harrison Blvd # 4650Ogden, UT 84403
7. Utah Women's Clinic
515 N Washington BlvdOgden, UT 84404
8. Women's Center At Ogden Regl
5495 E Ridgeline DrOgden, UT 84405
9. Utah Blitz Womens Football
2188 W 2220 NClearfield, UT 84015
10. PINK! Fitness for Women Inc
I have been going to PiNK fitness for about two years now, and I love it ! I am so uncoordinated and I was reluctant to try Zumba but the owner Si…
11. Antelope Women's Center
I love doctor Boheen. I've been going to her for 4 years. I found her by asking the nurses at the hospital who they would recommend and Dr. Boheen w…
12. Rocky Mountain Women's Health Center
This is a great office with nice staff. Usually lengthy waiting room wait but worth it. If you are thinking of delivering a baby they use Davis Hosp…
13. Rocky Mountain Women's Health
3110 W 300 N # BClearfield, UT 84015
14. Women's Recovery Center
2250 N 1700 WLayton, UT 84041
15. Brigham Center for Women's HealthServices
984 Medical Dr Suite 4Brigham City, UT 84302
From Business: We offer full OB/GYN and midwife services to Brigham City and surrounding communities.
16. Brigham City Women's Ctr
980 Medical Dr # 1Brigham City, UT 84302
17. Brigham Center for Women's Health
984 Medical Dr # 4Brigham City, UT 84302
18. American Assn Univ Women
625 W 600 SBrigham City, UT 84302
19. Wasatch Women's Center
715 E 3900 S Suite 203Salt Lake City, UT 84107
From Business: Wasatch Women's Center has been caring for Utah women for over 25 years. Our OB/ GYN physicians are board certified, insured, and specially trained. Our services ar…
20. Group USA and Camille LaVie Women's Apparel
Great customer service. Great cellection of Bridal attire at very reasonable prices. Awesome selection of clothes, posters, bags, body jewelry etc. …
21. Massage For Women - CLOSED
573 W 2600 SBountiful, UT 84010
22. Bridal Brilliance Rentals
From Business: Welcome to Bridal Brilliance Rentals my name is Valerie Ljungberg & I can't wait to help you find the Dress of your Dreams! We carry the largest inventory of design…
23. Blu Dot Ink
890 Marshall WayLayton, UT 84041
24. Scrubs Plus
811 S 500 W Suite 101Bountiful, UT 84010
From Business: Located in Bountiful, Utah. Serving the Wasatch Front. Unbelievable prices on the largest selection of Cherokee uniforms on the web. Choose from the latest styles i…
25. Salt Lake Running Company
2454 S 700 ESalt Lake City, UT 84106
26. Play It Again Sports
These guys have so a good selection of sporting goods to choose from. I came away with just what I needed at a fraction of the cost. Great to work w…
27. Freeski Brands
Serving the Ogden Area.
28. Rush Order Tees Screen Printing & Embroidery
Dear: Good day! I am glad to have this chance to introduce myself. we are the international transportation company and specialized on the ocean …
29. Bodycandy.com
How much do belly button piercings cost? Please let me know asap
30. G&K Services
From Business: G&K Services: Uniform Rental and Facilities Services A leader in uniform rental and facility products for more than 100 years, G&K Services is committed to enhancin…


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Woman assaulted
A 78 year old woman has been assaulted in her own home in the early hours of the morning.
A 78 year old woman has been assaulted in her own home in the early hours of the morning.
Police have released a picture of a 78 year old woman's injuries, after she was attacked in her home.
Officers were called to Whinlatter Road, in Whitehaven in the early hours of Wednesday morning (31st October).
The woman said two men in balaclavas came into her bedroom, threatened her and pushed her, before stealing money and valuables.
A 25 year old man from Whitehaven was arrested and has since been released.
A 48-year-old man has been jailed for 5 years, after he sexually assaulted a 20-year-old man whilst he slept.
The SNP government is determined to press ahead with 'standardised testing' in schools across Scotland, despite teaching union opposition.
Many are hoping the good weather, the reopening of the A591 and uncertainty over some foreign travel could help boost visitor numbers.

subset: commoncrawl


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Missing Boston College student found alive
Check out some of these adorable furry pals looking for new homes at Buddy Dog Humane Society!
Click here to meet some of the available pets!
Model/actor Nyle DiMarco won season 22 of "Dancing With the Stars" tonight, beating out UFC fighter Paige VanZant and "GMA" meteorologist Ginger Zee to take the coveted mirror ball trophy, ABC News reported.
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Awards in Business
Emerald Isle Marketing, New Berlin, received two Bronze Telly Awards.
Francis Investment Council was named as a Top 100 Retirement Plan Adviser in the country by PlanAdviser Magazine.
Richard Tinder , Merrill Lynch financial adviser, was named as a top adviser in Barron's magazine's "America's Top 1,000 Advisers: State-by-State" list.
Professional services
David J. Frank Landscape Contracting , Germantown, received six awards, including Judges' Choice, from the Wisconsin Landscape Contractors Association.
Stano Landscaping received a Gold Award from the Wisconsin Landscape Contractors Association.
Hyrax Energy, Madison, received the top honor in the Chicago Clean Energy Challenge.
MSPmentor named LockNet, La Crosse, and Applied Tech, Madison, among the top 200 managed services providers nationally.
Four Wisconsin companies were named among the "World's Most Ethical Companies" by the global think-tank the Ethisphere Institute: Johnson Controls Inc., Glendale, was honored in the automotive category; Rockwell Automation, Milwaukee, in electronics; Wisconsin Physicians Service Insurance Corp., Madison, in health insurance; and ManpowerGroup, Milwaukee, in staffing services.
The Journal Sentinel publishes notable awards and achievements earned by companies and individuals in Wisconsin. The newspaper reserves the right to not publish certain types of awards, and not all awards submitted will be published. E-mail items to email@example.com, using the subject line "Awards."
- May 20, 2016 | Journal Sentinel work on open records, medical labs wins national honors
- Mar 5, 2016 | Reporters recognized for health stories
- Sep 22, 2015 | Journal Sentinel food coverage wins three national awards
- Apr 16, 2015 | Awards tout efforts to improve distressed neighborhoods
- Dec 24, 2014 | Awards season heating up with Oscar nominations coming soon
- Nov 18, 2014 | Milwaukee police to honor officers, citizens at award ceremony
- May 15, 2013 | Milwaukee police honor 21 citizens, 65 department members
- Mar 16, 2013 | Washington Park improvement effort wins award
- Jan 10, 2013 | Haudricourt, McGinn named Wisconsin sportswriters of the year
- Aug 19, 2012 | Awards in Business
- Aug 12, 2012 | Awards in Business
- Aug 5, 2012 | Awards in business
- Jul 29, 2012 | Awards in Business
- Jul 15, 2012 | Awards in Business
- Jul 8, 2012 | Awards in Business
- Jul 1, 2012 | Awards in Business
Johnson Controls expands battery research partnership with UW-Madison
As Sears' losses mount, company looks for ways to leverage its strongest brands
Harley-Davidson rolls out new racing bike
Six start-ups to pitch at Water Summit in June
Casino magnate Wynn envisions water park in the desert
Modine Manufacturing reports quarterly profit, reversing a loss
LGO Group companies in Franklin file for receivership
Unemployment rates dip in Wisconsin metro areas
CEO pay climbs again, even as their stock prices don't
Bank of Montreal is cutting 4% of workforce
American Family Insurance inks baseball great Jeter as 'brand ambassador'
Boston Store to hold open house to show off renovated space in downtown store
Memorial Day weekend kicks off projected record summer of travel
Bayshore Town Center plans include razing former Sears store and building apartments
L.L.Bean plans first Wisconsin store at The Corners in Brookfield
Muskego mixed-use project, including Sendik's, wins key approval
Schaefer to resign as CEO of Citizens Community Federal Bank
Business Wire
Recent national business updates from the Associated Press


text:
I have been taking a diet pill that possibly contained sibutramine and have also been on acyclovir are there side effects
Can I take sibutramine with acyclovir?
- Posted:
- 30 Jan 2011 by :(
- Topics:
- acyclovir, sibutramine, side effect, diet
Answers (1)
2 Feb 2011
There appears to be no drug interactions between sibutramine and acyclovir.
However you should check with your doctor that this combination is safe.
(Sibutramine was withdrawn from the U.S. market in October 2010.)
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Private Sellers
- Sell your item in the UK's best Classic Marketplace.- Totally free to advertise, with UK-based phone support one call away- Fully self-serve. >> ADVERTISE YOUR PRIVATE CAR NOW
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Some view the Jaguar XJS 3.6 as the Diet Coke equivalent to the full fat 5.3-litre V12. Although power may be down in comparison to the silky-smooth twelve cylinder, and...+MORE
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Frogeye Sprite
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Must sell, 300 miles since total rebuild, no rust and waxoyled, very later Solihull built car, 4 months MoT, small tear in hood.
MoT July, previous restoration work carried out and in excellent condition. Blue mohair hood with blue check interior. Refurbished alloy wheels.
Selling 1980 Coupe soft top TR7/8 convertible with 3.5 V8 engine (brand new). Engine runs beautifully and clean. Stored in garage but selling as my Dad sadly can't drive any more. Clock has 41,000 on it, but engine not used as completed restoration project. Lovely car with tartan cloth interior and soft top hood. Just needs driver door mirror adding. We are open to offers and have invoices for parts etc.
MOT 12 months 08 / 06 / 2016
99241 miles
My tr7 has been finished for about 2 weeks and drives great for a 34 year old car, I am selling as I have another project on the go all ready, I am open to offers as close as possible to the asking price, viewing is recommended at any time ( no silly offers as they will be refused )I have a lot of receipts for the car plus many photos of the work in progress so if you wish photos I can email them to you on request.
£2450.00 ono
Under body
new petrol tank
new petrol pipes
welding to the under section to the floors
new brake pipes
new track rod ends and steering gators
under sealed
new carpet
new recliner bucket seats
new custom door panels
new relays, pektron unit, fuses etc
refurbished dash in black
new radio & speaker system
new roof
new gas boot stays
polished alloys
new tyres 200 miles ago
custom fit fibre glass front and back bumpers
Engine bay
new pancake air filters
serviced oil, spark plugs, leads, etc
new water hoses
new coil pack
new brake fluid
new fan belt
new battery
Triumph TR7 V8 convertible for sale
This convertible has been in the family for 24 years and is in excellent condition. It was last road taxed in 2003 and since has only been displayed at special occasions. Last year £1300 was professionally spent on decarbonising, renew gaskets/seals, rear brake shoes and cylinders, new battery, radiator, windscreen, steering column bushes etc for MOT. This car is in excellent mechanical condition and very clean inside and out.
TR7 convertible,2.0l, runs drives for resto, pretty solid needs tlc 07484293247
CALL US FOR A DETAILED DESCRIPTION OF THE CAR! WE DO A 150+ POINT CHECK ON EACH VEHICLE AND ARE HAPPY TO SHARE THESE DETAILS! If you want to know the reserve or 'Buy it now' please CALL US at (603) 818-8511. For more information please ask for Brandon or Josh. After business hours the line is always forwarded to one of our personal phones. CALL US (603) 818-8511 If you would like to see the car in person, please call 24 hours in advance to schedule an appointment. (603) 818-8511 We can email and Skype too! Our Skype is DustyOldCars2012; for email please contact email@example.com. Thanks! International Bidders from ANY country are welcome to bid and make offers. *** THIS CAR IS LOCATED IN DERRY, NEW HAMPSHIRE *** We are happy to pick you up at the Manchester, NH or Boston, MA Airport, any train or bus station, or anywhere else!
2.0 4 speed. Restored 8 years ago. Dry stored since. Engine runs well but needs clutch & brake hydraulics looking at.
Restoration project or swap for a classic British motorcycle in same condition, prefer 60's to 70's Triumph or BSA WHY? Cash either way. Please call for more info
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text:
|Publication number
|Publication type
|Application number
|Publication date
|Jul 30, 1996
|Filing date
|Sep 25, 1995
|Priority date
|Apr 5, 1993
|Fee status
|Also published as
|Publication number
|Robert F. Kwasnick, George E. Possin
|Original Assignee
|General Electric Company
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (9), Non-Patent Citations (10), Referenced by (19), Classifications (20), Legal Events (3)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a Continuation of application Ser. No. 08/309,564 filed Sep. 20, 1994, now abandoned, which is a Continuation of application Ser. No. 08/043,043 filed Apr. 05, 1993, now abandoned.
This invention is related to G. Possin et al. application Ser. No. 08/024,050 filed Mar. 1, 1993 and assigned to the present assignee.
This invention relates to the manufacture of thin-film field effect transistors and, in particular, concerns a process for patterning the source-drain contacts in such transistors.
In some types of imaging and display devices, a thin-film field-effect transistor (TFT) is associated with each pixel. The TFT must be small for several reasons. One, it consumes space within the pixel, which would otherwise be devoted to light collection or light control. Two, the TFT must be small because the pixels themselves are small; over one million pixels may be constructed on a plate measuring 8�8 inches. Three, the TFT must be small to minimize (a) the total gate capacitance, (b) the gate-to-source capacitance, and (c) the gate-to-drain capacitance.
The total gate capacitance should be small in order to reduce the total capacitance of the address line (i.e., scan line) which controls a row of TFTs in the imaging or display device. The charging time of this address line is controlled by the product of the line resistance and line capacitance. The total gate capacitance is added to the line capacitance in determining the address line charging time.
The gate-to-drain and source-to-gate capacitances should be small to minimize the coupling capacitance between the input address line, which is connected to the gate, and the imaging or display element connected to the source or drain.
In pursuit of reduced capacitances, the gate-to-drain and gate-to-source overlaps in the TFT should be kept minimal. However, it can be difficult to manufacture small TFTs in which the overlap is exactly a desired amount. One reason is that a photolithographic process is commonly used to form the source and drain. In such process, there is a typical positioning misalignment of about 2 microns or more which must be accounted for in the device layout. This amount of misalignment requires that the regions where the gate overlaps the source and drain be made larger than otherwise required, to allow for this misalignment. These enlarged sizes increase the capacitances discussed above, which is undesirable.
One approach to reducing this misalignment is found in commonly-assigned G. Possin et al. U.S. Pat. No. 5,010,027, issued Apr. 23, 1991. This patent, which discusses a self-alignment technique for constructing thin-film transistors, is hereby incorporated by reference. Another approach is found in the aforementioned G. Possin et al. application Serial No. 08/024,050, which is also incorporated by reference.
One object of the invention is to provide improvements in alignment of the source and drain contacts in the manufacture of thin-film transistors.
Another object of the invention is to provide a thin-film transistor of reduced size.
Briefly, in accordance with a preferred embodiment of the invention, during construction of a thin-film field-effect transistor, a dielectric island is formed between the source and the drain. A cap which overhangs the island is constructed. A coating of material, which will form the source and drain contacts, is next deposited. An etchant is then applied, which etches away the island, causing the material which coated the cap to lift away, leaving the source and drain contacts in place.
The features of the invention believed to be novel are set forth with particularity in the appended claims. The invention itself, however, both as to organization and method of operation, together with further objects and advantages thereof, may best be understood by reference to the following description taken in conjunction with the accompanying drawing(s) in which:
FIG. 1 is a schematic illustration of a field-effect transistor;
FIGS. 2-5 are a simplified representation of part of the sequence of steps used in constructing one form of the invention;
FIGS. 6 and 7 are schematic illustrations of a simplified representation of a lift-off procedure used in the invention;
FIGS. 8-14 illustrate in more detail the construction of one form of the invention;
FIGS. 15 illustrates in detail a dielectric cap, its two-layer coating, and a gap which separates the coating from the cap;
FIGS. 15A-15F illustrate in greater detail the sequence of steps used in lift-off; and
FIG. 16 illustrates a passivation layer applied to the thin-film transistor of the invention.
FIG. 1 illustrates a TFT of the type known in the art, showing an overlap O between the gate electrode G and each of the source S and drain D electrodes or contacts. The metallic source and drain electrodes are attached to the transistor semiconductor layer 10, typically of silicon, through a thin N+ silicon layer 11. The metallic gate electrode is spaced from layer 10 by a layer of insulation 12. The channel region exists in layer 10 above gate electrode G, primarily in the region not overlapped by drain and source electrodes D and S, respectively.
In pursuit of reduced capacitances, overlap O should be kept small. However, manufacture of small TFTs in which the overlap is exactly a desired amount is known to be difficult due, at least in part, to the typical positioning misalignment of about 2 microns or more resulting from the photolithographic process commonly used to form the source and drain contacts. This positioning misalignment requires that the regions where the gate electrode overlaps the source and drain contacts be made larger than otherwise necessary, to allow for the misalignment, resulting in the undesirable increases in the capacitances discussed above.
FIG. 2 shows a starting structure, which can be constructed using known techniques. The substrate (or carrier) 20 may be comprised of glass; however, other materials may be substituted therefor, provided they are sufficiently transparent to ultraviolet light in the 400 nanometer (nm) range. The gate electrode G is deposited on substrate or carrier 20, as by sputtering and is formed by conventional methods. Gate electrode G and substrate 20 are then overlaid, in sequence, by a layer of insulation 21 and a layer of silicon 22. Thereafter, as shown in FIG. 3, an island 34 is constructed from dielectric material, such as silicon nitride. The island is centered on the gate between the source and drain regions by use of a self-aligned technique, such as described in the aforementioned U.S. Pat. No. 5,010,027, in its formation. A cap 32, having a brim 33, is then formed on the island. The brim prevents material, deposited in the next step, from accumulating in region 31.
As the next step, the conductive source and drain contacts 41 and 42, respectively, are formed, as shown in FIG. 4. Although these contacts are shown as single layers, in practice they can be constructed of two layers 51 and 52 shown in FIG. 5, wherein they comprise SD metal and n+ silicon, respectively. During this step, the material forming source and drain layers 41 and 42, respectively, also accumulates as unwanted material 43 upon cap 32; however, brim 33 prevents accumulation of source and drain material in region 31.
The entire structure shown in FIG. 4 is next subjected to an etch, which attacks not only cap 32, but also island 34 which is exposed in region 31, due to overhanging brim 33 of cap 32. The cap and the island both etch away, as indicated by the sequence of FIG. 6, and the unwanted material 43 eventually lifts off, as indicated by the arrows and phantom lines shown in FIG. 7, leaving an overlap O between the gate electrode and each of the source S and drain D contacts. In the resulting structure, the extents of each overlap O are equal. No masking and patterning operation is required to remove the unwanted material 43 which accumulated upon the cap. A similar result is obtained if the structure subjected to the etch is that shown in FIG. 5 instead of FIG. 4.
The starting structure is shown in FIG. 8 and is built up by conventional techniques. Amorphous silicon layer 22 is about 20 to 100 nm thick. Two layers of dielectric 61 and 23 (shown in FIG. 9) are then applied, each in the range of 50 to 500 nm thick. Dielectric layer 61 and 23 are of different materials.
Upper dielectric layer 61 must react much slower with the etchant used (later described) than lower dielectric layer 23. Accordingly, dielectric layer 61 can be comprised of silicon nitride having a low silicon fraction. Such silicon nitride has a low etch rate in hydrofluoric acid. Dielectric layer 23 can be also be constructed of silicon nitride, but having a high silicon fraction. Such silicon nitride has a high etch rate in hydrofluoric acid. Alternatively, layer 61 can be a nitride having a low silicon fraction, as above, and layer 23 can be an oxide of silicon.
A layer of photoresist 62 is next applied, as shown in FIG. 9, and the photoresist is exposed to near ultraviolet light 65 (in the range of 400 nm), as indicated in FIG. 10. Because the light reaching the photoresist must travel through layer 22 of amorphous silicon, the exposure time must be longer than if the light reached the photoresist directly, as occurs in a front-side exposure step. For example, for a 25 nm layer of amorphous silicon, the exposure time should be about ten times longer (using light sources of comparable intensity), because the amorphous silicon attenuates the light by about 90%.
During the exposure step, gate G casts a shadow 66 upon photoresist layer 62 within the region bounded by dashed lines, as indicated in FIG. 10. The shadow ultimately creates a pattern. The photoresist is then developed, allowing the exposed photoresist to be easily removed while the shadowed (unexposed) portion remains, forming the pattern. The resulting structure is shown in FIG. 11.
Upper dielectric layer 61 is next etched away by using, for example, 10% by volume buffered hydrofluoric acid; however, dielectric layer 61 remains where protected by the pattern, as shown in FIG. 12. Continued etching removes some of lower dielectric layer 23 located beneath upper dielectric layer 61, as shown in FIGS. 13 and 14. Dielectric layer 61 now forms a cap over an island of dielectric layer 23. The cantilevered rim of the cap forms an overhang or brim 66.
FIG. 14A shows, in greater detail (but not necessarily with correct proportions), the amount d by which cap 61 overhangs island 23. The size of overhang d should be several times the thickness of island 23. An overhang of 0.5 microns, for the representative thicknesses of layers 61 and 23 given above, can be readily achieved.
Photoresist pattern 62, shown in phantom in FIG. 13, is next stripped, and the now-exposed amorphous silicon surface is cleaned, such as by a 2.5-minute etch in 1% by volume buffered hydrofluoric acid.
A layer of n+ amorphous silicon (or microcrystalline silicon) 64, about 10-100 nm thick, shown in FIG. 15, is then deposited by, for example, plasma enhanced chemical vapor deposition (PECVD). This is followed by deposition of a layer about 10-200 nm thick of SD metal 65, shown in FIG. 15, by sputtering or evaporation, for example.
Because brim 66 of cap 61 acts as an overhang, regions 27 are not significantly covered by amorphous silicon layer 64 and SD metal layer 65; instead, the two layers 64 and 65 deposit onto cap 61 and amorphous silicon layer 22 and are thus interrupted by a discontinuity at the sides of the cap. This discontinuity electrically disconnects the portions of layers 64 and 65 on cap 61 from layers 64 and 65 on amorphous silicon layer 22, respectively, and allows cap 61 to be attacked by etchant. However, a discontinuity in layers 64 and 65 is not strictly necessary since etchant can breach through layers 64 and 65 in region 27 if they are sufficiently thin in that region, such as in the range of 5 nanometers.
Cap 61 and island 23 are next etched away as schematically shown in the sequence of FIGS. 15A-15E, using 10% by volume hydrofluoric acid, causing the two-layer films coating cap 61 to lift off, as represented by the path indicated by the arrow shown in FIG. 15E. Ultimately, the entire cap 61 and entire island 23 are etched away by the etchant (not shown) which invades through the discontinuity in layers 64 and 65 in region 27 shown in FIG. 15. The resulting structure is shown in FIG. 15F.
As shown in FIG. 15F, a well 37 now exists in the region formerly occupied by island 23. This well is then filled with a passivation layer 70, as shown in FIG. 16. Passivation layer 70 may be a polyimide, plasma-deposited silicon nitride, a silicon oxide, or silicon oxynitride. Passivation layer 70 is applied after the SD metal layer 65 is patterned into source and drain contacts S and D, respectively, shown in FIG. 15F. This patterning of SD metal layer 65 does not define the overlap O (shown in FIGS. 7 and 15F) of the source S or drain D contacts over gate G. The overlap is defined by the steps which position photoresist layer 62 shown in FIG. 11. The position and shape of photoresist layer 62 determines the overlap O by virtue of defining the location of the edges of island 23, as shown in FIGS. 13-15.
The structure shown in FIG. 16 is a precursor to the final TFT, and can be processed in a known manner to produce the TFT. The aforementioned U.S. Pat. No. 5,010,027 provides details on one such type of further processing.
Undercutting dielectric layer 23 so that dielectric layer 61 attains an overhang, as shown in FIG. 13, can be accomplished by reactive ion etching (RIE) in combination with wet etching. Layers 61 and 23, shown in FIG. 12, are removed by RIE down to amorphous silicon layer 22 except where protected by the overlying photoresist layer 62. A wet etch using hydrofluoric acid or buffered hydrofluoric acid is then applied and etches laterally, causing the undercut of layer 23 and resulting overhang.
RIE, however, causes damage to the amorphous silicon. For example, in RIE using CHF3 /CO2 as the etchant, the etch rates of layers 61, 23 and 22 are as follows:
______________________________________Layer Etch Rate______________________________________61 (Silicon Nitride) 21.5 nm/min23 (Oxide of Silicon) 12.5 nm/min22 (Amorphous Silicon) 3 nm/min______________________________________
This table indicates that erosion of the amorphous silicon layer can be expected because its etch rate is about 25 percent of that of the adjacent layer. To avoid this damage, a low power corrective etch of the outer 20 to 30 nm of amorphous silicon layer 22 is performed as a post etch. Because this corrective etch can result in excessive thinning of the amorphous silicon layer, the previous RIE of layers 61 and 23 may be timed to avoid etching the amorphous silicon, leaving the island etch to be completed by a brief wet etch.
While only certain preferred features of the invention have been illustrated and described herein, many modifications and changes will occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
|Cited Patent
|Filing date
|Publication date
|Apr 28, 1987
|Nov 29, 1988
|Fuji Xerox Co., Ltd.
|Method of fabricating a thin film transistor
|Nov 27, 1987
|Aug 29, 1989
|Sharp Kabushiki Kaisha
|Thin-film transistor
|Nov 1, 1988
|Jun 19, 1990
|Sharp Kabushiki Kaisha
|Thin film transistor array
|Mar 21, 1990
|Apr 23, 1991
|General Electric Company
|Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
|Feb 12, 1992
|Nov 24, 1992
|Matsushita Electric Industrial Co., Ltd.
|Thin film transistor array and method of manufacturing same
|Title not available
|Title not available
|Title not available
|Title not available
|B. Diem et al., "a-Si:H TFT: Potential Suitabilities for Gate and Source-Drain Self-Aligned Structure", Mat. Res. Soc. Symp. Proc., vol. 33 (1984), pp. 281-285.
|B. Diem et al., a Si:H TFT: Potential Suitabilities for Gate and Source Drain Self Aligned Structure , Mat. Res. Soc. Symp. Proc., vol. 33 (1984), pp. 281 285.
|G. Possin, et al., "Contact-Limited Behavior in Amorphous-Silicon FET for Applications to Matrix-Addressed Liquid-Crystal Displays", pp. 183-189, Proc. of the SID, vol. 26/3, 1985.
|G. Possin, et al., Contact Limited Behavior in Amorphous Silicon FET for Applications to Matrix Addressed Liquid Crystal Displays , pp. 183 189, Proc. of the SID, vol. 26/3, 1985.
|K. Asama et al., "A Self-Alignment Processed a-Si TFT Matrix Circuit for LCD Panels", Fujitsu Laboratories, Ltd, Atsugi, Japan, SID Digest, 1983, pp. 144-145.
|K. Asama et al., A Self Alignment Processed a Si TFT Matrix Circuit for LCD Panels , Fujitsu Laboratories, Ltd, Atsugi, Japan, SID Digest, 1983, pp. 144 145.
|Webster s II New Riverside University Dictionary, 1984, p. 296.
|Webster s II New Riverside University Dictionary, pp. 69 and 78, 1984.
|Webster's II New Riverside University Dictionary, 1984, p. 296.
|Webster's II New Riverside University Dictionary, pp. 69 and 78, 1984.
|Citing Patent
|Filing date
|Publication date
|Jan 2, 1998
|Mar 23, 1999
|Mitsubishi Denki Kabushiki Kaisha
|Method of manufacturing thin-film transistor
|Jun 24, 1996
|Apr 18, 2000
|Fujitsu Limited
|Method for manufacturing magnetoresistance head
|Jul 29, 1997
|Jul 25, 2000
|Sony Corporation
|Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor
|Jan 11, 1999
|Aug 15, 2000
|Mitsubishi Denki Kabushiki Kaisha
|Thin-film transistor and method of manufacturing the same
|Apr 13, 1998
|Dec 5, 2000
|Lucent Technologies Inc.
|Trilayer lift-off process for semiconductor device metallization
|Dec 17, 1996
|Nov 27, 2001
|Semiconductor Energy Laboratory Co., Ltd.
|Method of manufacturing a thin film transistor using light irradiation to form impurity regions
|Dec 22, 1998
|Dec 18, 2001
|Semiconductor Energy Laboratory Co. Ltd.
|Insulated gate semiconductor device and process for fabricating the same
|Nov 17, 1999
|Aug 20, 2002
|Semiconductor Energy Laboratory Co., Ltd.
|Insulated gate semiconductor device and process for fabricating the same
|Oct 1, 1997
|Dec 31, 2002
|Semicondcutor Energy Laboratory Co., Ltd.
|Insulated gate semiconductor device and process for fabricating the same
|Nov 14, 2001
|May 27, 2003
|Semiconductor Energy Laboratory Co., Ltd.
|Insulated gate field effect transistor and method for forming the same
|Nov 12, 1999
|Aug 12, 2003
|Fujitsu Limtied
|Method for manufacturing magnetoresistance head
|May 16, 2003
|May 3, 2005
|Semiconductor Energy Lab
|Insulated gate field effect transistor and method for forming the same
|Sep 28, 2004
|Jul 18, 2006
|Lg.Philips Lcd Co., Ltd.
|Manufacturing method of a thin film transistor array substrate
|Dec 27, 2002
|Jun 3, 2008
|Semiconductor Energy Laboratory Co., Ltd.
|Insulated gate semiconductor device and process for fabricating the same
|Jun 27, 2006
|May 12, 2009
|Lg Display Co., Ltd.
|Method and apparatus of fabricating liquid crystal display device
|Jun 2, 2003
|Nov 6, 2003
|Gosain Dharam Pal
|Method of manufacturing a semiconductor device and a process of a thin film transistor
|Oct 29, 2004
|Apr 21, 2005
|Sony Corporation
|Method of manufacturing a semiconductor device and a process of a thin film transistor
|Jun 27, 2006
|Jan 4, 2007
|Yoo Soon S
|Method and apparatus of fabricating liquid crystal display device
|Apr 8, 2009
|Aug 13, 2009
|Heung Lyul Cho
|Method and apparatus of fabricating liquid crystal display device
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Feb 22, 2000
|Maintenance fee reminder mailed
|Jul 30, 2000
|Lapse for failure to pay maintenance fees
|Oct 3, 2000
|Expired due to failure to pay maintenance fee
Effective date: 20000730


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Ill raise public issues if elected to RS: Vivek TankhaVivek Krishna Tankha, former additional solicitor general of India, has been fielded as Congress nominee to Rajya Sabha from Madhya Pradesh. In MP, three Rajya Sabha seats will soon go vacant. Two are likely to go to BJP and one to Congress ... Hindustan Times, 5 hours ago
Congress fields Vivek Tankha for RS elections - HT Syndication, 17 hours ago
480 images for krishna
In Saath Nibhana Saathiya, Dr Krishna has been treating Gopi for a while, helping her to come out of the shock of losing Ahem. But now it seems that Gopi will be getting some love filled moments courtesy Dr Krishna as he will openly speak about his ...Financial Express, 5 hours ago Khalid Siddiqui happy to join cast of 'Saath Nibhaana Saathiya' Prokerala, 1 week ago
ONGC mulling buying majority stake in GSPC's KG gas block
State-owned ONGC is mulling buying majority stake in GSPC's Krishna Godavari basin gas block which will help prevent the Gujarat government firm's Rs 19,500 crore loan from turning into an NPA. Since the BJP-led government took power in the Centre, ...Business Standard, 11 hours ago ONGC plans to buy majority stake in GSPC's KG gas block Smart Investor, 1 hour ago ONGC plans buying majority stake in GSPC's KG gas block Livemint.com, 6 hours ago
Another first for Krishna
Yesteryear actor Krishna is credited for many firsts in Tollywood. His debut film Tene Manasulu was the first film to be shot in Eastman Colour. His film was also the first detective film in Telugu Goodachari 116. He has also introduced ...Deccan Chronicle, 21 hours ago Krishna's comeback on June 3 Deccan Chronicle, 4 days ago Geetanjali Krishna: 'Beauty' treatment for 'ugly' food Business Standard, 2 weeks ago U.S. FDA warns Sri Krishna Pharma, citing drug-data manipulation Reuters, 1 month ago
UG cabling along flyover, Pushkar ghats
District Collector Babu A. said underground electrical cabling of global standards is to be done along the Krishna Pushkar ghats and Kanaka Durga flyover, to last for a long time to come.At a review...The Hindu, 17 hours ago DGP, DC inspect ongoing Krishna Pushkaram works NetIndia123.com, 1 week ago Construct bathing ghats for Krishna pushkaralu in Srisailam, officials told The Hindu, 1 week ago Collector inspects Pushkaram arrangements The Hindu, 3 weeks ago
'Make Mahbubnagar a role model': Telangana Panchayat Minister
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Boost to inland waterways
Eluru: The Krishna - Godavari canal system is being spruced up to enable inland waterways project to take off. A meeting was convened by West Godavari district collector Bhaskar Katamneni with officials from the inland waterways, revenue and ...Times of India, 14 hours ago Precious water wasted The Hindu, 2 weeks ago Water scarcity due to favours done to sand mafia: Krishna Palemar Daiji World, 2 weeks ago Water level in Prakasam Barrage head pond dips to half The Hindu, 1 month ago
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Vulnerable spots on banks of Krishna river neglected
Vijayawada: Officials neglected to find several dangerous areas in the Krishna River course area where arrangements are being made for Krishna Pushkaralu. Several areas like Seethanagaam, Sittammavari paadalu and some points at Prakasam barrage are ...Deccan Chronicle, 16 hours ago Krishna River to be dredged from Vijayawada to Muktyala The Hindu, 2 weeks ago Four youth drown in Krishna river in Andhra Prokerala, 1 month ago Four teens drown in Krishna river The Hindu, 1 month ago
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Deoghar's RK Mission shines with of education
Education HTRanchi Newspapers RANCHI, May 29 -- Students from Deoghar's Rama Krishna Mission School in Jharkhand that follows the ageold gurukul system of education, have beaten their city counterparts in the Central Board of Secondary Education ...HT Syndication, 16 hours ago Deoghar's RK Mission shines with gurukul style of education Hindustan Times, 7 hours ago
Telangana creating trouble for A.P.
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From the can't-the-season-just-start-already file, Steve Spurrier made headlines Sunday by making a jab at the Big Ten. Spurrier, in reference to Nick Saban's idea for the "Power Five" conferences to only play one another, knocked the Big Ten's depth. See the quote in this post.
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Really, I'm not so sure this is so much a knock on the Big Ten as it is a compliment to East Carolina. The Pirates are fresh off a 10-3 season and are expected to have another solid team.
One expert seems to agree:
That said, Spurrier might want to consider his own conference, too, when referencing a lack of depth. The SEC had two winless teams in conference last season, with Arkansas and Kentucky both going 0-8, and six of its 14 teams finished under .500 in SEC play; in comparison, the then-12-team Big Ten had one and five, respectively.
|About Brent Yarina
|BTN.com senior editor Brent Yarina covers football and men's basketball for BTN.com. He writes the popular uniform feature "Clothes Call," which also focuses on the latest cosmetic changes across Big Ten arenas and stadiums. Read all of his work here. You can subscribe to Yarina's RSS feed and follow him on Twitter @BTNBrentYarina.


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This page contains Cheats for X-Men Vs. Street Fighter organized by sections for Saturn. This game has "Action Fighting" as genre, made by Capcom, released on Nov 27, 1997. If you can't find a hint or secret in our list, then please check this page periodically for the latest updates.
- Developer: Capcom
- Publisher: Capcom
- Genre: Action Fighting
- Release: Nov 27, 1997
- ESRB: Not Set
Highlight any character on the left-hand or right-hand side of the screen, then press and hold LEFT or RIGHT (depending on which side of the screen you chose) until the random selection starts. Now press any button to choose a random fighter...From: Jaignnuthdita
When the winner is saying thier victory words, have the loser press Left Shift or Right Shift to start a rematch...From: bondedcpu
At the Options screen highlight AUDIO and press L or R to select "Sharp SE" mode...From: RCoheed
After the screen says K.O. when you win press START and you can beat up the character that you destroyed. Have Fun!..From: sqwfty
Go to Chun-Li and press and hold START for five seconds, then press any button and you will see that Chun-Li is in a different Costume...From: abctroupz
Press C or Z when you select your character. There are two new colors in the Saturn version exclusively...From: valseviltwin
Beat the game twice and get the following option: COMBO GAUGE "Normal" is regular (ie: build up with attacks), and "Full" is already level three, and stays that way...From: runningrules
Go to the uppermost character and press UP to select Akuma...From: HopeIX
To play as Chun-Li in her Street Fighter Alpha costume, hold START while highlighting her then press any button...From: matt000
Highlight any character in the top row then press START...From: dork
Complete the game in normal mode and start a new game. You can now choose any character twice...From: beaches
If you are getting tired of watching the credits scroll, hold down the START button and they will quickly speed through...From: tairon45
If you know cheats, secrets, hints, glitches or other level guides for this game that can help others leveling up, then please Submit your Cheats and share your insights and experience with other gamers.
Stuck in this game? Set a specific, clearly defined question and let other gamers answer your question or view answers to previously asked questions. If you think you are an expert then please try to help others with their questions.
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text:
Kevin Federline Fails to Escape From Dogs' Attack on TV Show
Britney Spears' ex-husband Kevin Federline had attack dogs on his heels as he tried to lose weight on a U.S. reality TV show. During one challenge on "Celebrity Fit Club", which will air in America on Monday, February 22, out-of-shape and overweight Federline and three teammates were chained together as they crossed an obstacle course, while savage dogs hunted them down.
The gracious star agreed to help his pals through the course before competing it himself - and that meant he had to dash for the safety of a cage to avoid what he feared would be a mauling when one teammate struggled to get over a wall. He says, "I see the dogs coming over the f**king hill... The dogs are maybe 20 yards away."
Federline failed to lock the cage on time and one of the dogs charged through the gate, leaving the dancer/rapper to fend the animal off inside. But the Spears' ex-husband had nothing to worry about - as the raging beast jumped up at him, Federline realized the dogs had been muzzled.
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Home > Press > Rigid polyurethane foam an essential link in effective refrigeration chains
* Invaluable contribution to energy saving and climate protection
* Urbanization increases the distance that food has to travel to reach the consumer
The exceptionally important role played by rigid polyurethane foams in the insulation of cold stores, refrigerated containers, refrigerated displays and refrigerators is set to become even more vital in the future. As the most effective conventional insulating material in this field of application, they make an invaluable contribution when it comes to saving energy and cutting CO2 emissions. With urbanization constantly increasing the distance foodstuffs need to travel before they reach the consumer - particularly in the expanding megacities of Asia and Latin America - a functioning refrigeration chain is essential to safeguarding the supply of food to the inhabitants. With that in mind, Bayer MaterialScience is working hard to further improve the insulating properties and technical performance of rigid polyurethane foam systems for use in the refrigeration chain. Such measures would, for example, boost the energy efficiency of refrigerating appliances, thereby helping to conserve resources.
"We are committed to integrated solutions in terms of materials, processes and technologies, and develop these in close cooperation with refrigerating appliance manufacturers. In addition to improving energy efficiency, our main aim is to ensure high productivity in the manufacture of cooling systems," explained Dr. Reinhard Albers, an expert in technical insulation at BaySystems, the global umbrella brand for the polyurethane systems business of Bayer MaterialScience.
State-of-the-art household refrigeration appliances demonstrate the potential that rigid polyurethane foams offer when it comes to cutting CO2 emissions. The energy efficiency of such appliances depends largely on rigid polyurethane foams. If all old appliances with an energy efficiency rating lower than "A" were replaced by new, economical "A++" appliances, carbon dioxide emissions could be cut by around 22 million metric tons annually in the European Union alone. The resultant drop in energy consumption would be equivalent to around six percent of the energy savings stipulated in the Kyoto Protocol.
Rigid foams with nanopores
One area of research Bayer MaterialScience is pursuing could result in significant progress in the field of refrigerating appliance insulation within a matter of years. The plan is to use a new foam technology and microemulsions to create rigid polyurethane foams with "nanopores". The cells in conventional rigid polyurethane foams for refrigeration appliances currently measure around 150 micrometers. "With this new technology, we are aiming for cell sizes of less than 150 nanometers. This type of foam system would lead to a significant drop in the energy consumption of refrigeration devices," said Dr. Stefan Lindner, an expert in nanoporous rigid foams at Bayer MaterialScience. The smaller the pore size, the lower the thermal conductivity - and the better the insulating properties of the polyurethane foam.
Development work at BaySystems is also focusing on adapting the polyurethane formulations for rigid foams to new, more environmentally friendly blowing agents that have a far lower ozone depletion potential (ODP) and global warming potential (GWP).
Zero-emissions concept for cold stores
Cold stores are a core component of the portfolio covered by Bayer MaterialScience's EcoCommercial Building Program. This business model is designed to help decision-makers in the construction industry provide energy-optimized, sustainable building solutions and customized products for new construction projects such as kindergartens, schools and office buildings. "At present, we are working with selected partners to develop integrated energy and material concepts for cold stores. Customized rigid polyurethane foams play a central role in this process. The aim is to provide the know-how required to construct cold stores as zero-emission buildings," explained Dr. Thomas Braig, head of the EcoCommercial Building Program in the EMEA region.
A futuristic vision - a mobile refrigerator for supermarket trips
What might a trip to the supermarket look like in the future? The New Business section of Bayer MaterialScience and Folkwang University in Essen put their heads together to come up with an answer to this very question. The result was "Alohas" - a polyurethane-insulated, multifunctional cooler box equipped with an RFID chip. At home, the box serves as a normal refrigerator - but it can also be wheeled to the supermarket, just like a trolley. There, the cooling box's containers are filled with the right volume of goods, generating considerable savings in terms of packaging materials and interrupting the refrigeration chain for no more than a brief moment. "The excellent insulation provided by rigid polyurethane foam is fundamental to ensuring this concept actually works and that the goods purchased arrive home still fresh and in top quality condition," said Eckhard Foltin, head of the Creative Center at Bayer MaterialScience.
Refrigeration chain - not just for foodstuffs
Perishable foods are not the only products that benefit from a functional refrigeration chain that uses rigid polyurethane foam as insulation. Numerous pharmaceutical products, including many vaccines, have to be temporarily stored in refrigerated rooms on the manufacturers' premises and delivered cooled to pharmacies, hospitals and doctors' practices. Once delivered, they are again stored at low temperatures. One new field of application for rigid polyurethane foam is containers for transporting temperature-sensitive electronic goods.
About Bayer MaterialScience
With 2009 sales of EUR 7.5 billion, Bayer MaterialScience is among the world�s largest polymer companies. Business activities are focused on the manufacture of high-tech polymer materials and the development of innovative solutions for products used in many areas of daily life. The main segments served are the automotive, electrical and electronics, construction and the sports and leisure industries. At the end of 2009, Bayer MaterialScience had 30 production sites and employed approximately 14,300 people around the globe. Bayer MaterialScience is a Bayer Group company.
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If we listened to our intellect, we'd never have a love affair. We'd never have a friendship. We'd never go into business, because we'd be cynical. Well, that's nonsense. You've got to jump off cliffs all the time and build your wings on the way down.
Find on Amazon: Ray BradburyCite this Page: Citation


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In-game Freezing, Only certain games.
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The Disney Geek Fantasy Cabaret attraction, January 6, 1957, 1:91 p.m.
This is the place to be if you have on a geek outfit. Here you can drool at geek garb, hear geek religious works, learn geek traditions, buy geek ice cream, and chase after an actual geek!
We suggest you don't try Pirate Mode
© copyright 2011–2016
A Pants Aflame production


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Fiberoptic front sight replacement ??
Discussion in 'Tactical Shotguns' started by mike28w, Jun 18, 2010.
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Mountain / Prairie Discussion, Black Hills Overdrive - June 11-14, 2009 in Cadillac Clubs, Local Chapters and Regional Forums; Hey everybody, I just wanted to post up that there is a pretty cool car show in the Black Hills ...
Black Hills Overdrive - June 11-14, 2009
Hey everybody,
I just wanted to post up that there is a pretty cool car show in the Black Hills of South Dakota (where Mount Rushmore is located, for the uninitiated). The car show is called Black Hills Overdrive and if you are within 4 hours of the area I would highly recommend signing up. The event lasts like 4 days with a bunch of really scenic cruises through the hills with a couple of show 'n shines scattered in, it should be a great time this year. I would love to see more Vs there or anything with an LS motor in it. You can sign up at bhoverdrive.com.
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Seachem Flourish Excel
|Seachem Flourish Excel is a source of bioavailable organic carbon. All plants require a source of carbon. This is typically obtained from CO2, but, may also be derived from simple organic compounds (such as photosynthetic intermediates). Provides aquarium plants with a source of essential carbon Great for use alone or in conjunction with CO2 injection Iron reducing properties to promote ferrous state of iron One can derive a substantial benefit with the use of Flourish Excel either alone or in conjunction with CO2 injection. Flourish Excel also has iron reducing properties which promote the ferrous state of iron (Fe+2), which is more easily utilized by plants than ferric iron (Fe+3).Seachem Flourish Excel is an integral component of Seachem's plant products and is recommended for use with the entire Flourish line as well as our Flourite and Onyx Sand substrates. Contains no phosphate or nitrate.Directions: On initial use or after a major (> 40%) water change, use 1 capful (5 mL) for every 40 L (10 gallons). Thereafter use 1 capful for every 200 L (50 gallons) daily or every other day. Dosing may be slowly increased in high-growth aquariums. For smaller dosing please note that each cap thread is approximately 1 mL.
Seachem Flourish Planted Aquarium Supplement
|Seachem Flourish is a comprehensive plant supplement for the natural freshwater aquarium. Its rich assortment of important micro elements, trace elements and other nutrients promotes healthy, vigorous growth, health and color in aquatic plants. Comprehensive freshwater aquarium plant supplement Contains rich assortment of important micro elements Helps keep plants healthy and beautiful Seachem Flourish provides essential micronutrients to encourage vigorous, healthy growth of live freshwater aquatic plants, including calcium, magnesium, iron and other important elements with proven benefits for aquatic plants. This base of micro-nutrients supports macro element (NPK) fertilization in your aquarium.Flourish provides a wide variety of micro-nutrients, but may also be used with nutrient-specific supplements (including Flourish Nitrogen, Flourish Phosphorus or Flourish Potassium) as needed. Other manufacturers try to include ALL necessary nutrients in one supplement, leading to overdoses of micro-nutrients in an attempt to raise macro-nutrient levels.Directions: Use 1 capful (5 mL) for each 250 L (60 gallons) once or twice a week. For smaller doses, please note that each cap thread is approximately 1 mL. Refrigeration after opening is recommended but not required.Guaranteed Analysis:Total Nitrogen - 0.07%Available Phosphate (P2O5) - 0.01%Soluble Potash - 0.37%Calcium (Ca) - 0.14%Magnesium (Mg) - 0.11%Sulfur (S) - 0.27%Boron (B) - 0.009%Chlorine (Cl) - 1.15%Cobalt (Co) - 0.0004%Copper (Cu) - 0.0001%Iron (Fe) - 0.32%Manganese (Mn) - 0.01%Molybdenum (Mo) - 0.0009%Sodium (Na) - 0.13%Zinc (Zn) - 0.0007%
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V. Narayanasamy to become new Puducherry CM
Where are the jobs?: Congress asks government
Udta Punjab has not been banned: Anurag Kashyap
Shiv Pandit starrer 7 hours to go trailer released
Rado introduces chocolate brown collection in India
Amitabh Bachchan's upcoming song from 'TE3N' released
Mark Zuckerberg to connect with space station astronauts via Facebook Live
Congress declares nominations for RS
WHO Public Health advice regarding the Olympics and Zika virus
West Bengal: Explosion in TMC rally injures 9
EC rescinds poll notification for two seats in TN Assembly, a first for the country
Doctor held for allegedly raping his patient in Kolkata nursing-home
CBSE class ten result out, 96.21 per cent pass
BLU Mobile launches five smart and two feature phones in West Bengal
Valley of Flowers national park of Uttarakhand to open on June 5
Kolkata: Worker dies while dismantling Mamata's swearing-in stage at Red Road
FIFA sanctions several football associations after discriminatory chants by fans
Mega show in Delhi today to mark Modi Govt's two year
WHO rejects scientists' call to postpone Rio games over Zika outbreak
Copyright 2015 newkerala.com. All rights reserved. Unauthorised use of any content from this website is strictly prohibited. | Contact Us


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Modular Robotics. Brad writes –
This morning we announced that we have just led a $3m investment in Modular Robotics. I've joined the board and am psyched to now be an investor in two Boulder-based robotics companies – ModRobotics and Orbotix. In the spirit of "show" vs. "tell" (which everyone in TechStars has driven into their brains over and over again) here's a short three minute video that shows how ModRobotics first product – Cubelets – works.
Check out all the Circuit Playground Episodes! Our new kid's show and subscribe!
Have an amazing project to share? Join the SHOW-AND-TELL every Wednesday night at 7:30pm ET on Google+ Hangouts.
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Learn resistor values with Mho's Resistance or get the best electronics calculator for engineers "Circuit Playground" – Adafruit's Apps!
Maker Business — RadioShack .. is back? Names new CEO and more…
Wearables — The needle for the job
Electronics — = != ==.
Biohacking — Gene editing can now change an entire species — forever
1 Comment
Cubelets = Little Bits in 3D.
Sorry, the comment form is closed at this time.


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Date: 1966-11-18
Description: Two men carry signs to protest exploitation of tenants who are members of Local 404 by their landlord who is manager of College Barber Shop.
Date: 1899 ca.
Description: View from street of workers, including some African Americans, loading (and/or unloading) agricultural equipment and parts outside a general office of the...
Date: 1977-01-16
Description: An exaggerated keystone decorates an arch above the window of a house at 1052 East Gorham Street.
Date: 1944-09
Description: The cover page for International Harvester's "Store Technics" September to October edition of magazines and newsletters. The article titled "Presenting the...
Date: 1941-04-24 ca.
Description: Factory workers pull equipment with an International TracTracTor (crawler tractor), most likely at International Harvester's Tractor Works. Original captio...
Date: 1910 ca.
Description: View of West Bend featuring the Washington County Court House in the distance.
Date: 1949-06-29
Description: The steeple of First Congregational Church, 1609 University Avenue, encased in scaffolding for repair.
Date: 1935-05-17
Description: A group of high school musicians, from East Waterloo (Iowa?) High School, sleeping on bleachers in Field House during a National School Music contest.
Date: 1878 ca.
Description: Greek revival frame house with Doric columns. A man stands on the porch tipping his hat. A woman sits on the porch, and a woman is standing on walkway in f...
Date: 1920 ca.
Description: Side view of entrance to the University of Wisconsin-Madison College of Agriculture.
Date: 1916 ca.
Description: Black and red halftone print of the Model Home J902 perspective drawing. Frank Lloyd Wright outlined his vision of affordable housing. He asserted that the...
Date: 1900 after
Description: A view of the neoclassical-style facade of Ingraham Hall at Ripon College. The building is made of brick with a stone foundation. A column flanks each si...
Date: 1922 ca.
Description: A man walks through debris along a metal railing at Cottonwood Villa after an ice storm. The lake, with houses and trees along the shoreline are in the bac...
Description: Interior view of the South Milwaukee Public Library. A sign on a table reads: "Story Hour Saturday 11 A.M." There is a large, brick fireplace along the far...
Date: 1948-08 ca.
Description: Two men sheering sheep on a stage surrounded by a crowd of fair-goers, possibly in a competition at the Wisconsin Centennial Exposition.
Date: 2010-04
Description: A woman is on her cellphone in the foreground, while two women run up the escalator in the background.
Date: 1949-02-14
Description: Beulah Williamson, wife of the University of Wisconsin's new football coach, with her twin sons, Jack and David.
Date: 1958
Description: Elevated, exterior view of the Dane County Courthouse as it is being razed. Much of it is still intact in this image.
Date: 2004
Description: Harold and Florence Wiedmeyer live at N7821 West Bend Rd (Section 25). Florence has played the accordion all her life. Even as a very young girl she playe...
Date: 1970-04-25 ca.
Description: Close-up of an unidentified singer performing with an unidentified band on stage at night at the Sound Storm music festival.
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- 365 OutdoorWear: Up to 5.0% Cash Back
- 800Bear: 7.0% Cash Back
- 360Training: 9.0% Cash Back
- 3.1 Phillip Lim: 5.0% Cash Back
- River Island: 3.5% Cash Back
- 48HourPrint: 5.0% Cash Back
- 4 Wheel Drive Hardware: 3.0% Cash Back
- 4 Wheel Parts: 3.0% Cash Back
- 39dollarglasses: 8.0% Cash Back
- 4imprint: 1.0% Cash Back
- SeaWorld: 2.5% Cash Back
- 5.11 Tactical: 3.0% Cash Back


text:
Vancouver, BC - Jan 8, 2008 - Danagger Audio Works has reduced the list prices of its popular audio loss prevention systems. Danagger's Plan B Classic is a digital and analog dead air prevention system that provides replacement audio from an integrated audio player. Also affected by the price break is the Plan B Classic Plus, which features additional silence detection, switching and remote monitoring for a secondary STL or any other digital or analog program feed.
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text:
Very beautiful picture. L+F.
Great capture!!! YSL
best greetings, sete
Bel Taglio: Like!
que belleza!! L&F. Saludos. Maria. =)
Beautiful photo from unique pretty buildings - L&F. Friendly greetings from Brazil to Nepal.
Thanks for your visit Sonja.
Best regards, Eddie.
Thank you very much Majka for your visit and kind comments.
Friendly greetings from Poland :)
Amazing and spectacular!
Interesting picture - L
Kind regards, Finn
Lovely picture - L
Kind regards, Finn