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Native Plants
Q. Who is Mr. Smarty Plants?
A: There are those who suspect Wildflower Center volunteers are the culpable and capable culprits. Yet, others think staff members play some, albeit small, role. You can torture us with your plant questions, but we will never reveal the Green Guru's secret identity.
Did you know you can access the Native Plant Information Network with your web-enabled smartphone?
Ask Mr. Smarty Plants is a free service provided by the staff and volunteers at the Lady Bird Johnson Wildflower Center.
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Monday - May 02, 2011
From: Redding, CA
Region: California
Topic: Trees
Title: Trees non-toxic for horses in California
Answered by: Nan Hampton
QUESTION:I would like to plant next to my pasture. Please send a good variety of nontoxic (for horses) plants for shade. I live in Redding Cal.
First, let me tell you which trees are not safe to plant around horses. Avoid all Quercus species (oaks) and Prunus species (plums, peaches, cherries, apricots, etc.). Also, do not plant Acer rubrum (scarlet maple) or any Acer species—see Toxic Plants of Texas. Most pine species are not listed on any toxic plant database, but Pinus ponderosa (Ponderosa pine) does appear on several of the databases below and should not be planted near cattle or horses.
Now, here are some trees native to Shasta County that are safe and will provide shade for them:
Fraxinus dipetala (California ash) is a small deciduous tree (up to 20 feet) with fragrant white flowers. Here are photos and more information.
Populus fremontii (Fremont cottonwood) is fast-growing and grows to 60 feet, but it does like moderate water. Female plants produce cotton (the seeds), male plants do not. The 'Nimbus' variety is male. Here are more photos and information.
Platanus racemosa (California sycamore) grows fast and can reach 30 to 80 feet, but will need water until established. Here are more photos and information.
Cercis orbiculata [syn. Cercis occidentalis var. orbiculata] (California redbud) is a small tree (up to 15 feet) with pink blossoms in the spring. Here are more photos and information.
Umbellularia californica (California laurel) is evergreen and a slow-grower to 40 feet. Here are more photos.
Abies concolor (Balsam fir) is evergreen and grows 50 to 150 feet high.
Cornus nuttallii (Pacific dogwood) grows 15 to 40 feet high and has showy flowers.
Here are databases that you can use to check on toxicity of plants to horses and other animals:
ASPCA's Toxic and Non-Toxic Plant List - Horses [Note: The first list is for plants toxic to horses and the second list is for plants non-toxic to horses.]
Horse Nutrition: Poisonous Plants from Ohio State University Extension Service
10 Most Poisonous Plants for Horses from Equisearch
California Poison Control System
Pennsylvania's Poisonous Plants from the Universtiy of Pennsylvania
Cornell University Plants Poisonous to Livestock
Poisonous Plants of North Carolina
Canadian Poisonous Plants Information System
Here are photos from our Image Gallery of some of the plants listed above:
More Trees Questions
Need trees to screen view of parking garage in Houston, TX.
December 29, 2011 - We live in Houston, TX with a beautiful lot except a 4 story parking garage has been built behind us. How can we screen this and the lights out of site. It looks terrible from the second story espec...
view the full question and answer
Effects of concrete patio poured around tulip poplar tree
July 01, 2008 - We have a beautiful tulip poplar tree in our back yard that we wanted to be the focal point of our patio. We had seen pictures of patios with trees incorporated in patios leaving two to three feet of...
view the full question and answer
Mid-sized tree that does not attract moths for Katy, TX
December 25, 2010 - I recently started to get interested in gardening. I live in Katy Texas and am looking for a medium sized tree I can grow in my backyard. I don't mind a tree that attracts birds or butterflies but I...
view the full question and answer
Native specimen tree for Houston, Texas
September 23, 2009 - Looking for recommendations for a specimen tree to flank our front steps. Evergreen, 15 feet tall, maybe 10 feet wide. Will be near icee blue Japanese yews and nearly wild rose bushes. Ideas?
view the full question and answer
Flowering problems with Mexican Plum and Mimosa in Austin, TX
March 18, 2010 - Greetings, My Prunus mexicana (Mexican Plum) did not produce flowers before its leaves. Can you tell me why? I was hoping to have some fruit this year. Also, as of this morning March 13. My...
view the full question and answer
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The equation between ex married couple Hrithik Roshan and Suzanne Khan are slowly getting better. The duo was spotted partying together last evening in Mumbai. An exclusive picture from the party was revealed on net which shows Hrithik and Suzanne hugging and posing for the camera. The duo was fu ... read more
It is said that behind every successful man there is a woman. The same holds true for the star of Indian Filmdom whose debut film Kaho Na Pyar Haai took Bollywood by a startle. The star in question is Hrithik Roshan, with the woman being Suzanne Khan; the youngest daughter of Zarine and actor director Sanjay Khan.
Suzanne Khan born on 26th of October 1975 happened to share a common locality in Mumbai with the current superstar. The two families always shared a common rapport in spite of their religious difference. According to Suzanne Khan it was their similarity in nature and thought that helped change friendship into love which culminated in marriage, in 2000 on 26th October.
Suzanne Khan who happens to be a woman by her own right has always played a pivotal role in the star's life. Very few of us are aware of her involvement with the making of Kaho Na Pyar Hai. She gave her designing business a backseat to assist Rakesh Roshan before its release.
Suzanne Khan, the pillar of strength in Hrithik Roshan's life attributes her independence and confidence to the days spent in U.S.A where she went to acquire a degree in designing. Incidentally she was financially settled even before Hrithik Roshan could make his mark in Bollywood. Her flawless complexion, gorgeous beauty and above all her dignified poise made her the cynosure of all eyes.
A proud mother of Hrihaan and Hridhaan she strikes a perfect balance between her personal and professional world. Her role in the supposed affair of Hrithik- Barbara was particularly laudable. It was one of maturity, dignity and poise.
All About Suzanne Khan
Hrithik Roshan and Kangana Ranaut's ugly spat has become the talk of the town for quite some time. The two actors have been indulged in blaming and abusing one another for quite a long time and at this point of argument, everyone is curious to know about Hrithik Roshan's ex-wife Suzanne Khan reac ... read more
Suzanne Khan put the speculation on rest that she will reconcile with her separated husband and actor Hrithik Roshan. The rumour of the divorced couple Hrithik and Suzanne are getting back together surfaced when the duo celebrated their son's birthday Hridhaan together recently. Suzanne K ... read more
Hrithik Roshan and Suzanne Khan proved that though legally separated they are doting parents to their two children, Hridhaan and Hrehaan. Post divorce, this is the first time the divorced couple came together for a special occasion. Hridhaan's birthday brought Hrithik Roshan and Suzanne Khan toge ... read more
Hrithik Roshan's ex-wife Sussanne Khan, who has been maintaining a stoic silence on the actor's murky legal battle with Kangana Ranaut, has finally spoken up on the issue. After a leaked picture of Hrithik hugging Kangana started circulating, Hrithik's team released the same picture and a ... read more
Arjun Rampal goes tipsy. Never before the hunk was spotted in such a distressed manner. He looked dull and tired as he was spotted outside Olive, in Bandra carrying a bottle of liquor in hand. Arjun was dressed ... read more
Hrithik Roshan's ex-wife Suzanne Khan has called off her relationship with actor Arjun Rampal. Suzanne's alleged relationship with Arjun is touted to be one of the reasons of her split with Hrithik Roshan and now this new relationship is also nearing towards the end. For the past 15 month ... read more
Kangana Ranaut and Hrithik Roshan's fiasco has been grabbing eyeballs since the past week. They bonded while filming the 2010 movie 'Kites' and their friendship allegedly culminated into a romantic relationship during the shoot of 'Krrish 3'. Their alleged affair which was kept under wraps ... read more
Salman Khan met with Hrithik Roshan's ex-wife Suzanne Khan and Preity Zinta over dinner at a high-end restaurant in Mumbai. It was not too late when Salman Khan threw an impromptu birthday for his best friend Preity and now ... read more
Bollywood heartthrob Hrithik Roshan turned 42 on 10 January and and the hunk has thrown a grand birthday party at a five star hotel. He has invited all his close buddies and as expected the 'Dhoom 2' boy did not invite his ex-wife Suzanne Khan. Hrithik planned his birthday party and a week before ... read more

subset: commoncrawl


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In Venezuela the ruling by the vice president and the government that cancer-stricken President Hugo Chavez's inauguration could be postponed has been backed by the supreme court and the military.
The court ruled the delay is constitutionally legitimate as the President's terms of office have run uninterrupted.
"The President is currently functioning as the Republic's president, head of state, head of the government, so at no point in time has he been absent. On the contrary, it does not even qualify as a temporary absence, nor permanent absence. On the contrary, it opens the opportunity for flexibility because the popular will of the people – the general will of the nation – is being respected," said Vice President Nicolas Maduro.
Opposition leaders insisted the constitution was clear that Chavez must be sworn in before the National Assembly on January 10th. They have expressed outrage at the decision.
Prayers and vigils have been held across the country for the 58-year-old who has not been seen or heard from for almost a month. The government has called for a rally outside the presidential palace on Thursday, that is the day when the inauguration had been scheduled.
- 1Fears grow for missing Japanese boy left in woods as punishment
- 2'Tourists go home' say Spanish locals in backlash to holiday boom
- 3Iraqi army enters Falluja as assault approaches decisive phase
- 4Rescuers publish image of drowned migrant baby
- 5Turkey: Muslim families should forget birth control says Erdogan
Wires > News
- 07:28 CET Fire breaks out in Indian arms depot, several feared dead
- 07:24 CET Saudi says intercepts and destroys ballistic missile from Yemen
- 07:12 CET Good morning, North Korea! Defector preaches dangers of cult…
- 06:17 CET El Salvador gang truce mediator released from detention
- 05:36 CET Haiti commission recommends scrapping disputed election results
- 05:31 CET Hitler's older brother was in fact younger and died early…
- 04:47 CET Attempted North Korea missile launch fails – South Korea
- 04:30 CET Top North Korean official visits China – Kyodo


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Most Expensive Falmouth Neighborhoods
Falmouth is a somewhat small coastal town (i.e. on the ocean, a bay, or inlet) located in the state of Maine.
With a population of 11,734 people and two constituent neighborhoods,
Falmouth is the 17th largest community in Maine.
Falmouth home prices are not only among the most expensive in Maine, but Falmouth real estate also consistently ranks among the most expensive in America.
Falmouth is a decidedly white-collar town, with fully 91.15% of the workforce employed in white-collar jobs, well above the national average. Overall, Falmouth is a town of professionals, managers and sales and office workers. There are especially a lot of people living in Falmouth who work in management occupations (17.07%), healthcare (11.24%) and sales jobs (11.22%).
One interesting thing about the economy is that relatively large numbers of people worked from their home: 9.32% of the workforce. While this number may seem small overall, as a fraction of the total workforce this is high compared to the rest of the county. These workers are often telecommuters who work in knowledge-based, white-collar professions. For example, Silicon Valley has large numbers of people who telecommute. Other at-home workers may be self-employed people who operate small businesses out of their homes.
Because of many things, Falmouth is a very good place for families to consider. With an enviable combination of good schools, low crime, college-educated neighbors who tend to support education because of their own experiences, and a high rate of home ownership in predominantly single-family properties, Falmouth really has some of the features that families look for when choosing a good community to raise children. Is Falmouth perfect? Of course not, and if you like frenetic nightlife, it will be far from your cup of tea. But overall this is a solid community, with many things to recommend it as a family-friendly place to live.
Falmouth is also nautical, which means that parts of it are somewhat historic and touch the ocean or tidal bodies of water, such as inlets and bays. Such areas are often places that visitors and locals go for waterfront activities or taking in the scenery.
Do you have a 4-year college degree or graduate degree? If so, you may feel right at home in Falmouth. 66.17% of adults here have a 4-year degree or graduate degree, whereas the national average for all cities and towns is just 21.84%.
The per capita income in Falmouth in 2010 was $54,273, which is wealthy relative to Maine and the nation. This equates to an annual income of $217,092 for a family of four.
The people who call Falmouth home describe themselves as belonging to a variety of racial and ethnic groups. The greatest number of Falmouth residents report their race to be White, followed by Asian. Important ancestries of people in Falmouth include English, Irish, French, German, Scottish and Italian.
The most common language spoken in Falmouth is English. Some people also speak French.
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Billionaire Yuri Milner leaves Mail.ru board
Mail.ru Group , the largest Internet company in Russia, has announced that Yuri Milner steps down from his position as chairman of the board of directors. Milner, who founded Mail.ru in 1998, will pass the position to the company's current CEO Dmitri Grishin.
Mail.ru Group owns:
Impressive, huh?
With net profit of $208 million in 2011, Mail.ru today is more profitable than Yandex, which reported $179 million net profit last year. Will Mail.ru perform the same without Mr. Milner as chairman? I'll keep you posted.
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At its 10th Annual Dubrow Vocational Celebration Breakfast in November 2015, the Samost Jewish Family & Children's Service honored Bright Lights USA for its efforts to hire people with disabilities. 163 more words
Tags » People With Disabilities
What Moves You? A Simple Guide to Disability Story-Sharing
The other day, I shared a great story about Chef Austin, a man with Down Syndrome in Texas who operates his own food truck ( 696 more words
Clearly David Cameron is facing a number of questions that require something approaching answers rather than his predicable, tiresome and carefully rehearsed weasel words.
Like all elected representatives in a supposedly mature and functioning democracy, the Prime Minister is answerable to the electorate at the ballot box but with questions regarding electoral fraud being firmly asked and robustly ignored, the certainty of legitimate parliamentary representation is far from certain. 623 more words
Commentary: A Different Way of Seeing Museum Exhibits
This year marks the 10th anniversary of the United Nations Convention on the Rights of Persons with Disabilities. The Canadian Museum for Human Rights is commemorating the anniversary with… 497 more words
Thank you for your prayers and support for our recent visit to Uganda. Here is our first video telling Gloria's story. We hope you enjoy getting to know her. 70 more words
Most Iowa School Districts Don't Comply With Americans With Disabilities Act
Originally published on IowaWatch.org.
When Cael Rudkin was in first grade at West Marshall Elementary School he got stuck outside one day because none of the school's doors had handicap accessible push buttons. 1,843 more words
Criminalizing People With Disabilities: The Ugly Face Of Fascism In The USA
Texas Congressman Ted Poe has introduced the ADA Education and Reform Act of 2015 (H.R.3765 — 114th Congress (2015-2016) , which would make accessibility much harder to get for people with disabilities, delay the ability to have our Civil Rights enforced, and would charge us with criminal penalties for not following the bill's onerous and restrictive process. 1,247 more words


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Christie making an interesting pitch to Iowa voters
He's telling them they can trust him because his poll numbers are horrible in New Jersey based mostly on how voters feel about Christie spending a lot of time away from the Garden State.
Trump looking to spend big on TV advertising
Billionaire Republican presidential candidate Donald Trump said he plans to spend at least $2 million a week on television advertising in the first three voting states which are Iowa,New Hampshire, and South Carolina.
Christie not responding to latest jabs from Trump
In New Hampshire, Christie's poll numbers have been surging, and he has become the only real threat to Trump in the race.
Trump continues attack against news media
New Hampshire's largest newspaper, The Union Leader, is the latest target of Republican presidential candidate Donald Trump's attacks against the news media.
Trump looks to control media covering his campaign
Trump routinely orders news cameras to show off the large crowds gathered at his rallies.
Abortion becoming volatile topic for both sides in presidential campaign
Typically, candidates have tried to avoid this issue but Republicans in particular are being more vocal about positions that could alienate women voters.
Christie on main stage for GOP Debate tomorrow night
While he continues to be near the back of the pack in national polls, he has surged to second in New Hampshire.
Trump says Republican leaders better get used to him being in the race
Trump said he has been hearing rumors of a brokered convention where party officials, not voters actually choose the nominee.
Republican voters don't think Trump is likable according to a new poll
They don't think he's compassionate and many don't consider him particularly honest.
Hillary Clinton has plans for husband if elected president
On Late Night, Clinton said she would consult with Bill Clinton on the economy, foreign affairs, and other matters as they come up.


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James Earl Jones
42 Fans
Jan. 17th, 1931
Born in
Arkabutla, Mississippi, USA
6' 1 1/2"
Guest TV Roles
[Complete List]
Show Name
Characters Played
Ep Count
Neb Langston
Dr. Lou Rush
Darth Vader (Voiced)
Will Cleveland
Felix Wilson
Narrator (Voiced)
Reverend Harris Bonham
Chief Bella
Chief Justice Caleb Thorne
James Earl Jones was born in 1931 in Arkabutla, Mississippi, USA. At an early age he started to take dramatic lessons to calm himself down. It appeared to work as he has since starred in many films over a 40-year period, beginning with the Stanley Kubrick classic Dr. Strangelove or: How I Learned to Stop Worrying and Love the Bomb (1964). Probably best known for his role as Darth Vader (for the voice only, as the man in the Darth Vader suit was David Prowse (I), whose voice was dubbed because of his British West Country accent). Has appeared on "The Simpsons" (1989) a couple of times and played Mufasa in The Lion King (1994). James Earl Jones returned as the voice of Darth Vader in Star Wars: Episode III - Revenge of the Sith (2005).
- He's the commanding voice that says "This is CNN".
- He won a Tony in 1969 for "The Great White Hope".
- Was once an Army officer after college.
- His vocal performance of Darth Vader is ranked #84 on Premiere Magazine's 100 Greatest Movie Characters of All Time.
- To help get over his stuttering, he would write poetry, and his schoolteachers would let him read it in front of the class.
- Has appeared in two films with 'Madge Sinclair' (qv) where they play the main character's parents. In _Coming to America (1988)_ (qv), they play the mother and father of 'Eddie Murphy (I)' (qv)'s character, Hakeem. In _The Lion King (1994)_ (qv), they play the mother and father of Simba. In _Coming to America (1988)_ (qv), he appears with 'Samuel L. Jackson' (qv), who also appears with him in _Star Wars: Episode III - Revenge of the Sith (2005)_ (qv), in which 'James Earl Jones' (qv) voices Darth Vader, the father of original trilogy hero Luke Skywalker. In _The Lion King (1994)_ (qv), Jones' character is named Mufasa. In _Star Wars: Episode III - Revenge of the Sith (2005)_ (qv), Darth Vader is severely injured on the planet Mustafar, which necessitates the synthesized voice Jones provides.
- He received the 'John F. Kennedy' (qv) Centre Honour in December 2002.
- He was the first established celebrity to appear on the series _"Sesame Street" (1969)_ (qv).
Related sites for this celeb
» BuddyTV
» TVGuide
» AceShowbiz
» Celebrity-Mania
» Zap2it.com
» BuddyTV
» TVGuide
» AceShowbiz
» Celebrity-Mania
» Zap2it.com


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Virtual TART - Art from Taranaki, New Zealand
(Press "Refresh" if you've visited before -
Sign up for our monthly Email Newsletter about new exhibitions
These pages are updated very frequently)
Showcase - the work of 51 Taranaki artists
Click to see the exhibition
Pink plane in blue landscape
(The Artist meets with Disappointment)
An exhibition of political art
by Roger Morris, New Zealand
Click on the image to see
one image from each artist.
or on a name if you're looking for a particular artist.
Dorothy Andrews, Mark Bellringer, Jenny Bielawski, Deirdre Brockhill, Maria Brockhill, Amanda Burgess, Alby Carter, Anne-Marie Clegg, Barbara Clegg, Robert Clement, Dale Copeland, Laurel Davis, Lester Earl, Carl Fairweather, Amanda Griffin, Lesley le Grove, pip Guthrie, Karen Hamer, Waldo Hartley, Amanda Hewlett, Anne Holliday, Glenys Howland, Jan Huijbers, Leila Hunter, Paul Hutchinson, Graham Kirk, Anna Korver, KM Gallery, Darren Mackey, Helen Mays, Karen McDell (Vasalisa), Linda McFetridge, Tanya Mercer, Al Millard, Steve Molloy, Roger Morris, Wayne Morris, Marianne Muggeridge, Caryl Murray, Fern Petrie, Chris Poletti, Mili Purpil, Frances Rookes, Tony Rumball, Lee Russell, Margaret Scott, Katie Smith, MB Stoneman, Filipe Tohi, Nora West, Joanne Wilkes, Vickie Worthington, Click here if you'd like to see what the artists look like
And here to get an idea of where to find their studios.
Front Page Exhibition Showcase News Links Guestbook
Coming Soon - (a new exhibition each month)
(email Dale if you're interested in having an exhibition on the Virtual TART site)
2016 June - The Ship of Fools
An open exhibition. Details for taking part can be seen here.
July -TARANAKI @ WAIHEKE
Showing the works in an exhibition at UPCYCLE on Waiheke Island
by a group of Taranaki artists who work on or with recycled materials,.
Opening June 26th.
August -
September - .......?
October - .......?
November - .......?
2017 January - .......?
February - .......?
April - .......?
May - Art Taranaki - de retour � Paris
Taranaki artists are exhibiting in Paris. You will be able to see a large part of the exhibition here.
(See our 59Rivoli page to see our methods for carrying a huge exhibition in our luggage.)
September - ICE19
Yes, Ice19 will go ahead.
click here for details about taking part.
June - .......?
Sign up for our monthly Email Newsletter about new exhibitions
News about Taranaki art and artists.
The TARANAKI ART AWARDS
of Opunake now on its own website.
International Collage Exchanges
One collage from each of the hundreds of artists who have taken part in previous International Collage Exhibition/exchanges (previously called Bakers Dozen) can be found on outofsight.co.nz
(with links to information on how to take part in this annual open exhibition.)
For payments, click here for * * PayPal * * Thank you.
To convert between currencies, click here $ XE.com Currency Converter €Then close the currency window to return
|Front Page
* These pages are frequently updated - use your bookmark, come back soon. *
Copyright of all images remains with the artists.
These pages are written and maintained by Dale Copeland
Please email me if something's not working. Thanks.


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Most Americans and Germans agree: More trade between the United States and the European Union would be a good idea.
But when you get down to details of a possible trade pact, suspicions pop up, according to a new poll conducted by the Pew Research Center in association with Germany's Bertelsmann Foundation.
"There is a lot of fear" now in Europe about how much Americans might pry into Europeans' lives if they could impose their more relaxed privacy standards on the EU, Aart De Geus, CEO of the Bertelsmann Foundation, said at a conference in Washington on Thursday.
De Geus presented the survey results along with Bruce Stokes, director of Global Economic Attitudes at Pew Research.
First, the two pointed to the overall positive response: When asked whether a U.S.-EU trade deal would benefit their respective countries, 53 percent of Americans and 55 percent of Germans said that "it sounds like a pretty good thing," Stokes said.
But when asked whether they would welcome one of the key provisions — namely, adoption of uniform regulatory standards for U.S. and EU goods and services — a trade deal becomes much less attractive to Germans. In the wake of last year's revelations about U.S. spying, 85 percent of Germans say they prefer European regulations for data privacy.
Documents released last summer by Edward Snowden, a former contractor for the National Security Agency, suggested the United States gathered information from around the world, including Germany. That has generated "a huge backlash" in Germany, De Geus said.
In contrast to the Germans, about 3 Americans in 4 think it would be good to harmonize regulations among trading partners, but that positive attitude may reflect their assumption that U.S. standards would prevail, Stokes said.
Stokes said the White House will continue to work on building support for a proposed Transatlantic Trade & Investment Partnership, and likely would ask Congress to vote on it next year. That's because "failure will have a cost," he said.
For example, Europeans may draw closer to China, and end up selling more goods into the growing market, leaving the United States behind, Stokes said.
Read original article – Published April 10, 2014 5:38 PM ET
German Fears About U.S. Spying Could Hurt Trade Deal
Recent headlines
How Mendenhall Glacier staff explain climate changeThe U.S. Forest Service wants tourists to take in the dramatic views, but also consider why the glacier is shrinking.
Photos: Memorial Day in JuneauPhotos from Monday's observances at Evergreen Cemetery and Warrior Park.
Juneau man's icebreaker Storis documentary was an 8-year 'labor of love'It took Damon Stuebner eight years to make this documentary. It traces Storis' journey from World War II to its long history in Alaska dating to 1948 when it came to Juneau.
Despite Federal Changes, 'Eskimo' Still in Use in Western AlaskaHattie Keller says her 'Eskimo name' is Iviilik, but when asked about her ethnicity, she says she's Inupiaq instead of Eskimo.


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"Where Fillmore County News Comes First"
Online Edition
Friday, May 27th, 2016
Volume ∞ Issue ∞
- 3:16:33, May 26th 2016 - SV resident - Wish this report included more of the specifics about what the public h ... [Read More]
- 1:46:00, May 26th 2016 - Livin' The Dream - grow up....Man, your parents were twisted to give you that name. ... [Read More]
- 12:26:28, May 26th 2016 - Kim Wentworth - @Paul- I have read through the above commentary and can not find muc ... [Read More]
- 10:51:07, May 26th 2016 - grow up - People that are to afraid to put there name on something they post are not ... [Read More]
- 7:23:26, May 25th 2016 - ### - You want to tell your school putting a handicap sign up on steet that will bloc ... [Read More]
- 12:35:31, May 25th 2016 - Kit Kat Bar - I don't know... Everyone gets awards these days, but that, is ONE HUGE ... [Read More]
- 4:18:09, May 24th 2016 - Give me a break - This paper has officially turned into what every comedy movie think ... [Read More]
- 1:43:25, May 24th 2016 - Cervidae - In my husband's defense, he is the most unselfish person I know and anyon ... [Read More]
- 4:29:20, May 23rd 2016 - - His house and all his surrounding land is for sale, yet he's not going to move and ... [Read More]
- 11:16:49, May 23rd 2016 - Paul - Well read does not mean only reading books that you find that are in-line wit ... [Read More]
Hampel's pitching downs GMLOK
Fri, Apr 22nd, 2011
Posted in Sports
Posted in Sports
Just days removed from a senior class trip, a number of FC-L seniors returned to wreak havoc on opponent GMLOK. Colton Hampel calmly took the hill and effectively shutdown the Bulldog's bats. Over seven innings, he surrendered only four hits and two runs. Meanwhile, his teammates supplied plenty of offense. FCL batters cracked 13 hits and scored 12 runs. Three Falcons went 3-4, Tyler Eickhoff (HR, 2 RBI's, 2 runs, SB), senior Zach Olstad (3 runs, RBI), and senior Jordan Ristau (5 RBI's, 2 runs). Sophomore Dan Gatzke also reached safely in 3 of 4 plate appearances, notching a hit and walking twice (2 RBI's, 2 runs, SB). FCL was able to get in their first win in as many tries, 12-2 in six innings. GMLOK's Alan McCaulley had half his team's hits, going 2-3 with an RBI double.


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|Publication number
|Publication type
|Application number
|Publication date
|Sep 8, 2009
|Filing date
|Mar 16, 2007
|Priority date
|Nov 29, 2002
|Fee status
|Also published as
|Publication number
|Crocifisso Marco Antonio Renna, Luigi La Magna, Simona Lorenti, Salvatore Coffa
|Original Assignee
|Stmicroelectronics S.R.L.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (13), Non-Patent Citations (3), Referenced by (3), Classifications (31), Legal Events (1)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a Divisional of U.S. patent application Ser. No. 10/726,005, filed on Dec. 1, 2003 now U.S. Pat. No. 7,193,256 which claims priority from European patent application No. 02425742.0, filed Nov. 29, 2002, which is incorporated herein by reference.
Embodiments of the present invention relate generally to a method for manufacturing a semiconductor substrate comprising at least a buried cavity.
More specifically, embodiments of the invention relate to a method for manufacturing a semiconductor substrate of a first concentration type comprising a buried insulating cavity.
Embodiments of the invention also relate to devices manufactured with a method according to the embodiments of the invention.
Embodiments of the invention relate particularly, but not exclusively, to a method for manufacturing a semiconductor substrate comprising buried microchannels and the following description is made with reference to this field of application for convenience of illustration only.
As it is well known, demands for circuits with higher operating speeds, affecting at present most electronic applications, particularly at radio frequency, and the need to produce chip integrated mechanical structures (MEMS-Micro Electro-Mechanical System), make the use of SOI (Semiconductor On Insulator) substrates more and more frequent. In fact, most of the limitations of electronic-circuit performance are due to the dispersion and parasitic effects occurring between the integrated devices and the substrate.
A first prior-art solution to insulate the semiconductor integrated electronic devices from the substrate provides for the creation under said devices of highly doped "buried" wells, which form charge-depletion areas in order to block the charge flow towards the substrate.
Although advantageous in many aspects, this first solution has several drawbacks. In fact, with the increase of circuit operating frequencies, this solution cannot meet the insulation requirements needed for the correct operation of the single devices.
As already mentioned, a second solution provides, on the contrary, the use of SOI substrates, whose structure is shown in
In particular, a SOI structure comprises a first substrate 1 and a second substrate 2 insulated from each other by an oxide layer 3. Such a structure allows the first substrate 1, whereon all devices are integrated, to be electrically insulated from the second substrate 2.
It is evident that the dispersion currents between the first and second substrates are almost null, and the parasitic capacitance effects are reduced, allowing, therefore, the integration of devices operating at higher cut-off frequencies than typically possible in a non-SOI structure.
As already said, SOI structures are used considerably also in MEMS and MOEMS (Micro Optical-Electro-Mechanical System) applications to form suspended structures, because it is possible to selectively remove the buried oxide layer since it is used as sacrificial layer.
Nevertheless, the formation of SOI structures is rather expensive, and it heavily affects the calculation of the final cost of the finished product. Moreover, these manufacturing processes are rather critical and often involve a significant decrease in yield, both because of structural defects and because of the effective reduction in useable area.
The main process steps of a traditional SOI structure manufacturing process are now described.
A first and second substrate 1 and 2 are superficially oxidized, so that the thickness of the oxide layer 3 thus obtained on the surface of the two substrates 1 and 2 is about half the thickness of the final layer 3 as shown in
After performing a polishing step of the surfaces which will come into contact, the first and second substrates 1 and 2 are initially aligned with micrometric precision, and are then put in surface contact. By means of a pressure exerted by a body B, in order to eliminate the air between the oxide layers 3 belonging to two substrates 1 and 2, a virtually perfect adhesion is obtained as shown in
The first and second substrates 1 and 2 are then subjected to a thermal process at high temperature (e.g., 1100�1200� C.) which allows the oxide layer 3 to reflux and then bond of the two substrates (
The SOI structure thus obtained is superficially refaced and polished in order to obtain the surface ready for the integration of the electronic devices. The thickness of the first substrate is set at a chosen value, which varies according to the applications used as shown in
Although the process can seem simple, the high cost of the single SOI structure is, however, due to the low yield. In fact, in order to make the SOI structure usable, the alignment of the two substrates 1 and 2 must be practically perfect, with the ideal being to keep the crystallographic orientation of the substrates 1 and 2 the same in the SOI structure.
Moreover the thermal processes create a series of stress phenomena which produce the so-called "warp" effect. This effect causes a bending of the SOI structure because of a bending-radius decrease by more than one order of magnitude. This "warp" effect is even higher if the oxide layer 3 on the back side of the substrate 2 facing away from the substrate 1, of the SOI structure is removed, because this layer balances at least partially the "warp" effect induced on the SOI structure by the oxide layer 3 on the first substrate 1. The removal of this back oxide layer 3 is quite common in most devices having a back contact. In some SOI structures, the bending is so high as to create problems in the photolithography both in the alignment step and in the focusing step. Moreover, in some cases, the "warp" effect of the SOI structure does not allow the vacuum system that holds the SOI structure in place to seal.
It is therefore expensive from the economic point of view to manufacture SOI structures characterized by close tolerances from the point of view of thickness, uniformity, and "warp" effect. Moreover the external circular oxide crown called the "terrace" must be taken into consideration for each SOI structure, because it reduces, by more than 1 cm, the diameter of the area effectively usable for the integration. Also, the terrace negatively affects the wafer yield, greatly on small and middle-sized substrates (4, 5 and 6 inches), and in a more limited way on large-sized substrates (8 and 12 inches).
A second method to form higher-quality substrates, but also more expensive, exploits the so-called SIMOX method, whose main steps are indicated herebelow.
With particular reference to
An annealing is then performed at extremely high temperature in an inert atmosphere for the diffusion of the implanted ions and the restoration of the crystalline characteristics of the semiconductor substrate above the layer 5 damaged by ion implantation, with subsequent extension of the area which will become the SOI structure oxide layer.
A further annealing step at extremely high temperature in an oxidizing atmosphere is performed to realize the oxidation of the buried layer 5 and complete the SOI substrate structure oxide layer 5′.
The surface oxide layer 6 is then removed to complete the definite SOI structure.
Although the SIMOX method allows improved substrates to be obtained, from the physical-mechanical characteristic point of view, this process is, as already mentioned, rather expensive. Moreover, limitations exist on the achievable thickness; for example, the thickness of the buried oxide layer typically does not exceed 500 nm, and the thickness of the overall SOI structure typically does not exceed one micron.
If compared to the first method for manufacturing a SOI structure, this last method allows an improved thickness tolerance, a greater uniformity, the absence of the terrace and, thus, a larger exposable surface for the same wafer size, and finally the so-formed SOI structures are less affected by the "warp" effect.
Therefore, a need has arisen for a structure comprising a low-cost buried insulation layer capable of providing good physical-mechanical characteristics and a wide thickness choice of the buried oxide layer and of the final structure, overcoming the limitations and drawbacks which still limit the SOI structures formed according to the prior art.
An embodiment of the present invention provides a cavity in a semiconductor substrate starting from trench structures formed therein by exploiting the properties of the silicon self-organizing surface migration process.
Features and advantages of the device according to the invention will be apparent from the following description of an embodiment thereof given by way of non-limiting example with reference to the attached drawings.
In the drawings:
With reference to the drawings, a method for manufacturing SOI structures according to an embodiment of the invention is now described.
In particular, as shown in
The semiconductor substrate 7 is formed by a crystalline silicon wafer with any P-type crystallographic orientation, for example doped with acceptor ions with a concentration between 1E13 and 5E20 [cm−3] (P−, P, P+, P++ type etc.). In alternative, the semiconductor substrate 7 is doped with donor ions (N-type) with a concentration between, for example, 1E13 and 5E20.
If the substrate 7 is of the N− type, an N+-type epitaxial layer is formed on the substrate 7. The so-formed epitaxial layer thickness can vary by several microns, according to the chosen application type.
In a first embodiment, the trenches 8 are equally-spaced grooves formed in the substrate 7, for example, having a width between 0.3 and 5 μm, a depth between 1 and 40 μm, and having a distance between adjacent trenches of between 10 and 40 μm.
As shown in
This semiconductor material layer 9 is formed for example with epitaxy.
The semiconductor material layer 9 is of the same dopant type and with the same impurity concentration as the substrate 7 (relative to the P-type substrate 7 case) or as the first epitaxial layer being formed (in the case of the N−-type substrate). The thickness of this semiconductor material layer 9 is, for example, between 1 and 10 μm.
In order to partially close trenches 8 the silicon self-organizing surface migration process can be also exploited.
Particularly, cylindrically developing trenches 10 are formed in the substrate 7, which have a diameter comprised, for example, between 0.2 and 2 μm and a depth comprised between 2 and 30 μm, as shown in
It is however possible to form trenches 8 developing in parallel lines, as shown for example in
After forming trenches 10 in the substrate, an annealing process is performed at high temperature, for example between 1000� C.�1300� C., in a non-oxidizing environment, for example H2, for about some tens of minutes.
A structural rearrangement of atoms towards the lowest energy layers occurs in the substrate 7, so that the cylindrically-developing trench 10 turns into a spherical cavity 10 a buried in correspondence with the surface-distal trench and forming a surface layer 7 a on the cavities.
Particularly, the annealing thermal process changes the morphology of trenches 10 as shown in
This silicon self-organizing surface migration process has also some advantages with respect to the traditional methods for manufacturing SOI structures, in fact it does not produce defects in the upper crystalline structure.
If very close trenches 10 are formed in the substrate 7, it is possible to form the structure shown in
Experimental tests have shown that, with Rs indicating the radius of the depleted sphere 10 a produced at the end of the annealing process by the trench 10, and RR indicating the radius of the starting trench 10, having cylindrical symmetry, it results:
Rs=1.88 RR
As shown in
The number of depleted spheres 10 a formed inside the semiconductor layer 7 is highlighted, depending on the depth L and the radius R of the trench 10, in the diagram of
By changing the depth L of the trench 10, it is possible to determine the number and the radius of the depleted areas formed after the silicon self-organizing surface migration process inside the single trench 10.
Advantageously, by forming the trenches 10 in such a way that the distance DNT between the centers of two consecutive trenches is equal to 2RS=3.76 RR, each depleted sphere 10 a being formed can thus join the first sphere close thereto. In this way an infinite number of depleted spheres 10 a can be connected obtaining several geometries as shown in
Once the trench 8 or 10 closing process is completed, through the deposition of the surface layer 9 a or the annealing process, the SOI structure manufacturing process continues, however, with the formation on the surface layer 7 a, 9 a of the semiconductor material layer 9 which forms the final SOI structure final substrate layer.
The type of doping and the concentration of this semiconductor material layer 9 are conveniently selected on the basis of the application.
If the starting substrate 7 is of the N-type, the N-type epitaxial layer exists between this semiconductor material layer 9 and the microchannels.
As shown in
The distance between these orthogonal trenches 11 depends on the size of the device, or of the circuit, which is to be integrated on the SOI structure (even several mms).
The structure thus obtained is subjected to a step of transforming of a layer 10 c comprising microchannels 10 b into a porous silicon layer. Particularly, the structure is subjected to a wet electroerosive process of the crystalline silicon in a hydrofluoric acid water solution. Therefore the layer 10 c comprising microchannels 10 b turns into a porous silicon layer 12.
The electrochemical process occurs in a cell wherein the crystalline silicon layer 10 c is the positive electrode, while the cathode is a metallic electrode.
Particularly, once an operating voltage is set, porous silicon is not formed in the N− type layers, because it is as if a reverse-biased junction preventing the current flow was formed. Vice versa, in the P+, N+ and P− type substrate portion, with the same voltage, porous silicon is formed, since it is as if a directly biased junction allowing the current to flow is formed, closing the electric circuit being created. Nothing prevents operating selectively between areas P+ and N+, it is simply enough to correctly define the process parameters.
The diagram of
After the electrochemical etching, the structure obtained therefrom is the same as in
The structure obtained comprises therefore, on a crystalline silicon substrate 7, a porous silicon layer 12 crossed by a series of equally-spaced microchannels 10 b, whereon a semiconductor material layer 9 is formed on which it is possible to perform the integration of devices and circuits. The semiconductor material layer 9 is crossed by a series of trenches 11 being orthogonal to the microchannels 10 b which, through their intersection, create a network of channels allowing the electrochemical solution to permeate during the electroerosion process, and the output of reaction products of the process for forming porous silicon. Afterwards the same channels 11 will serve to carry the gas required for the oxidation, or the thermal treatment of the porous silicon layer 12.
A scheme of the structure obtained seen from above is the one shown hereafter in
As shown in
After the oxidation step the filling of the surface trenches 11 is performed through a dielectric layer formation step, for example by depositing a TEOS (Tetra Ethyl Orthosilane) layer or a PVAPOX layer. The surface dielectric layer is then removed, respectively for the case of the N-type substrate as shown in
Several additional embodiments of the invention are now described.
In a first embodiment of the process according to the invention, as shown in
Through an anisotropic removal some trenches 8 and 10 of predetermined size are opened.
An annealing step is performed at high temperature in a hydrogen environment so as to let the self-organizing surface migration process occur, which, by planarizing the substrate 7 surface, leaves the round-section channel 10 b buried.
Nothing prevents these trenches 8 from being closed by a semiconductor material layer 9 a formed on the substrate 7.
Once the "trench closing" is performed, a semiconductor material layer 9 is formed, as shown in
The semiconductor material layer 9 is formed in order to be selective during the porous layer formation. In alternative, a doped polysilicon layer is deposited, also in this case what has been said for the formation process selectivity due to the dopant type and quality is still valid.
Through a masking step and an etching process some trenches 11 are Opened on the surface layer, which intersect the underlying microchannels 10 b, which will serve as channel input, output as shown in
As shown in
Through a basic etching, at room temperature, the porous silicon layer 12 is selectively removed, leaving therefore a far wider microchannel 10 d than the microchannel formed by the thermal process. It is however possible to form surface trenches 11 after forming the microchannel 10 d.
This embodiment is particularly advantageous in the microfluid field. In fact, by exploiting the self-organizing surface migration principle and the following porous silicon selective formation, buried microchannels for "lab on chip"-type applications are formed.
A second embodiment of the process according to the invention is shown in
Through an anisotropic removing process some trenches 10 of predetermined size are opened.
An annealing step is performed at high temperature in an hydrogen environment so as to let the self-organizing surface migration process occur, which, by planarizing the substrate 7 surface, leaves a depleted portion of microchannel 10 b buried, whose form will depend directly on the geometry defined by trenches 10, covered by a layer 7 a or membrane, totally formed by defectless crystalline silicon.
Once the "trench thermal closing" is completed, if it is necessary to have a membrane being more than some microns thick, an epitaxial growth of a semiconductor material layer 9 can be performed without any problem in order to reach the desired thickness.
If a higher thickness, and thus volume, of the microchannel 10 b cavity is required, it may be necessary to grow epitaxially a further layer having a different doping with respect to the substrate 7 and being selective in the porous layer 12 formation. In the alternative, a doped polysilicon deposition can be performed. At this point, after opening on the surface small trenches 11 connecting the cavity 10 b with the surface, the porous silicon layer 12 is formed, through an anodizing electrochemical process in an hydrofluoric acid solution. This porous silicon layer 12 is dissolved afterwards by a basic etching (KOH, NaOH, etc.).
The final structure is shown in
If a condenser microphone is to be formed as shown in
A second embodiment to obtain an integrated microphone is shown in
After defining the features to be possessed by a membrane, trenches 10 are defined on the substrate 7 by photolithography and anisotropic etching.
Afterwards, the annealing at high temperature is performed to form the buried microchannel 10 b which will have the desired geometry previously defined.
After manufacturing the membrane 7 a the thickening thereof or the microchannel 10 b extension can be performed by forming a further layer. Finally a layer 14 of polysilicon or other material having piezoresistive features is deposited on the membrane and the geometries of the piezoresistors which will transduce the pressure variation signal into an easily-detectable electric signal are defined through photomasking and etching. A scheme of a pressure sensor structure is shown in
This third embodiment of the method according to the invention is thus particularly advantageous when manufacturing suspended structures, as in the case of microphones and pressure sensors, and generally in each device requiring a stiff membrane 7 a.
Advantageously, the structure and geometry of the membrane 7 a are formed with different features according to the pressure field to be undergone in the application in terms of rigidity, elasticity, thickness.
A fourth embodiment of the process according to the invention to manufacture a MOSFET transistor with buried channel (ISFET Ion sensitivity FET) is now described.
Trenches 10 with predetermined size are formed on the silicon substrate 7.
Through a thermal process at high temperature in an hydrogen environment trenches are closed, in order to planarize the surface and leave a microchannel 10 b buried.
Advantageously, through a selective formation and removal process of transformation of the silicon layer into a porous silicon layer 12, the extension step of the buried microchannel 10 d is performed, as shown in
Advantageously, on the previously obtained structure, a semiconductor material layer 9 of the same type of material which will form the microchannel 10 b is made to grow epitaxially.
Afterwards, drain and source regions 15 are formed in the substrate 7 or in the semiconductor material layer 9 if it is present. These drain and source regions are formed at the edges of the buried microchannel 10 c being formed in the substrate 7.
A gate oxide layer and the MOSFET gate region 16 are then formed, as shown in
At this point the contacts of the MOSFET gate 16, drain and source 15 regions are formed conventionally.
The so-formed device will have, far from the electrode area, two large ports according to the application and the package type, which intercept the buried microchannel 10 b 10 d and serve as inlet/outlet, through which gases can go in and out, and the solutions which will be required to etch chemically the surface or which are to be monitored by the system.
Obviously the MOSFET manufactured with the method according to embodiments of the invention will be biased in a static way by means of surface electric contacts in the transistor active area. The interaction with the solutions and molecules anchored to the inner surface of the buried microchannel 10 b will produce a modulation of the MOSFET channel which, if detected, allows the chemical composition of the fluids which are caused to flow in the buried microchannel 10 b to be studied in real-time.
An application of an ISMOSFET transistor manufactured with a method according to an embodiment of the invention is for example the detection of the AND anchorage for determining the genetic expression.
In fact ISFETs (Ion sensitivity FET) manufactured with a method according to an embodiment of the invention are sensitive to the changes induced by the chemical bonds between the molecules and the surface of the buried microchannel 10 b. This device allows, after a convenient calibration, PH, charge, molecular bond changes to be studied and detected.
In conclusion, the above-described methods allow SOI structures to be manufactured, which are to be used in the manufacturing of fast electronic circuits having reduced costs which affect negligibly the product final price.
In fact these substrates are formed only by combining different techniques, such as wet etching of the silicon surfaces for trench definition, electrochemical etching of the crystalline silicon for porous silicon formation, exploitation of the selectivity with respect to the dopant type and quantity of the crystalline substrate of this etching, exploitation of the crystalline silicon surface self-organization properties and, finally, epitaxial growths.
Therefore, devices are manufactured, which combine the crystalline silicon surface self-organization technique with the following formation of a conductive layer, the selective formation of a porous silicon layer 12 around the cavity 10 b and the following oxidation thereof, the hole through the already-formed buried cavities 10 b (microchannels) allowing a porous silicon buried layer to be uniformly formed around the cavities 10 b. Advantageously, layer 12 is oxidized. This layer 12 can be then removed with a very short etching time. The so-formed SOI substrates easily allow therefore traditional electronic devices to be integrated on the so-formed surface portion. Also, the cavity 10 b can remain void (or be made void by removal of the layer 12) to allow formation of other devices such as microphones, transducers, and ISFETs. An integrated circuit having such a substrate structure can be used in electronic systems such as computer system.
From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention.
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Tattoo Ideas, Sugar Skull Tattoo, Skull Tattoos, Half Sleeve, Sugar Kull, Tattoos Piercings, Candy Skull, Henna Tattoo
sugar skull and flowers arm tattoo Blind Nobility Offers a superior experience in Tattooing & Piercing. We guide you through the planning process and come up with a design that is exactly what you imagined.
Sugar skull tattoo. Would be neat for thigh...would look cool as a henna tattoo
Being half Mexican, i'm getting a sugar skull tattoo to honor my tradition
henna tattoos for men with sugar skull tattoo designs on half sleeve ...
Sugar skull tattoo. Would be neat for thigh. Definitely on my list.
Sugar skull tattoo http://www.tattooesque.com/?s=skullsearch-send=l
sugar skull and flowers arm tattoo Human Canvas,Looove...,My Style,sugar skulls,Tattoo Ideas,Tattoos,You guys made me INK!,
30 candy skull tattoo designs
dandelion watercolor tattoo
Tattoo Idea, Dandelion Tattoo, Water Color, Tattoo Design, Tattoos Piercing, Watercolour Tattoo
#watercolor #water #color #tattoo #tatuaggio #tattooidea #tattooart #tattooartist #ink #inked #inkmaster #tattooideas
Dandelion Tattoos And Meanings-Dandelion Tattoo Designs And Ideas-Dandelion Tattoo Images
Watercolor #tattoo design #tattoo patterns| http://tattoo-patterns-520.blogspot.com
water color tattoo #watercolor #tattoo | http://awesometattoopics.lemoncoin.org
Dandelion Watercolor tattoo my-body-is-my-journal-my-tattoos-piercings-are-my-
water color tattoo #watercolor #tattoo #tattoo patterns #tattoo design
Love the watercolour tattoo idea.
Unique Tattoo Ideas: 20 Breathtaking Dandelion Tattoo Designs
Tattoo Ideas, Marilyn Monroe, Audrey Marilyn, Audrey Hepburn, Body Art, Pinup, My Style
Audrey Hepburn, cigar, jack daniels, Marilyn Monroe, black and white,tattoo. Good gone bad I love it
pinups of marilyn monroe | marilyn monroe, pin up, audrey hepburn, b&w - image #537921 on Favim ...
If Shakespeare were a tattooist We'd appreciate body art more / Marilyn Monroe, Audrey Hepburn
Audrey Hepburn tattooing Marilyn Monroe with a bottle of Jack Daniels! I love this so much!
Not really a tattoo idea but I love Audrey and Marilyn and this picture is just perfect!
Audrey Hepburn Tattooing Marilyn Monroe by James Danger Harvey. Oh, I love this!
#pinup #audrey hepburn and #marilyn monroe
Audrey & Marilyn...I love it!
Divas and #tattoo s
Flower tattoo - love how the colors pop!
Tattoo Ideas, Colors Pop, Tattoo Tattoo, Tattoo Beautiful, Tattoos Piercings, Bright Flower, Flower Tattoos
Flower tattoo | Tattoo Ideas Central 8531 Santa Monica Blvd West Hollywood, CA 90069 - Call or stop by anytime. UPDATE: Now ANYONE can call our Drug and Drama Helpline Free at 310-855-9168.
Flower tattoo - love how the colors pop! Make money pinning! JOIN MY TEAM! Start here: http://www.earnyouronlineincomefast.com
Flower tattoo - love how the colors pop! This would match my tree really nicely!
Flower tattoo - love how the colors pop! One of my brother's birth month flowers
love it with no outline! Flower tattoo - love how the colors pop!
Flower tattoo - love how the colors pop, esp the purple ones
Love these whimsical bright flowers
Flower tattoo Beautiful
Flower tattoo - color
Frida Kahlo tattoo really do not love where it is but first Frida tattoo I have seen!
Tattoo Ahhaa, Frida Kahlo Tattoos, Tattoo Badassss, Tattoo Chloe, Tattoo Ink
Las mejores fotos de Frida Kahlo #frida #fridakahlo #mexico #arte #pintura #fridafrases #kahlo
Frida Kahlo tattoo. It's weird and a little awkward but I dig it.
Frida Kahlo tattoo @Melynda Eason Lucky Eason Lucky Snowden
Frida Kahlo tattoo. Love the location of the tattoo.
Frida Kahlo tattoo. @Chloe Singla Hahaha
Frida Kahlo tattoo. Ahhaa i loved it !!
Frida Kahlo tattoo Frida Kahlo
Frida Kahlo tattoo: badassss
Roses tattoo
Tattoo Idea, Flower Thigh Tattoo, Art Tattoo, Future Tattoo, Ink Tattoo, Tattoos Piercing
I don't usually like leg tattoos but this one is awesome! #ink #tattoo
Flower tattoo ideas
Flower Thigh Tattoo
Tattoo by Troy St at Timeless Tattoo in Kansas City, MO
Tattoo Ideas, Abstract Owl, Bird Tattoo, Unique Tattoo, Tattoo Inspiration, Body Art, Tattoo Design, Owl Tattoos
See more tattoo ideas on http://tattooswall.com/colorful-owl-bird-tattoo-design-080.html Colorful Owl Bird Tattoo Design #080 - http://goo.gl/5JCTno #080, #Bird, #Colorful, #Design, #Owl, #OwlTattoos, #Tattoo
Colourful Owl Tattoo Meaning And Design Ideas -Readmore : http://tattoosclick.com/owl-tattoo-designs
Colorful Owl Bird Tattoo Design - http://tattooideastrend.com/colorful-owl-bird-tattoo-design/ -
Tattoo•Ideas•Tattoo Ideas•Ink•Body Art•Art•Love
vintage patterned owl tattoo...inspiration?!?!
Abstract owl tattoo
Unique tattoo
It is time to feast your eyes upon some lovely, unique, lustworthy owl tattoos. – Follow me on Pinterest to see more Lovely Tattoo's.
Free Tattoo Design: Bird Tattoo Design Picture 14, Tattos, Tattoos, Ideas, Pictures, Gallery, Art, Downloads and More
Tattoos by Berlin-based Peter Aurisch
Very Cool
Ink Splatter, Water Color, Inkblot, Tattoo Design, Tattoos Piercing, Ink Blot
This is beautiful. Can be taken as ink blots or paint drips. Being that I love creating pen and ink drawings, this has to be one of my favorite tattoos I have EVER seen. Very unique. Makes me want to take my giraffe spots on my arm up and across my shoulder and back. and turn them into ink splatters
Watercolor tattoo Design Idea - Tattoo Design Ideas - AwwOMG.com: Aww-worthy Stuff Worth Your Internet Browsing Time
A different kind of art -Best Watercolor tattoo design idea. See unique Watercolor tattoo ideas for men and women.
I loooooove the water color look! flower tattoo
Watercolor tattoo Idea | Tattoo Design Ideas
Watercolour inkblot flower tattoo
Ink splatter and flower tattoo
Watercolor tattoo Design Idea
Best Watercolor tattoo design idea 2016. See unique Watercolor tattoo ideas for men and women. See more about Watercolor tattoo
Love this back tattoo
Indian Skull Tattoos, Tattoo Placement, Art Tattoo, Back Tattoo, Tattoos Piercings, American Tattoo
Love this back tattoo!!!! Make it smaller then put this on my shoulder, like my dad.
Love this back #tattoo patterns #tattoo design| http://tattoo.flappyhouse.com
this is the sickest back tattoo, like ever
I want this as a thigh tattoo
Back Tattoo - Tattoologist
indian skeleton tattoo
Native American tattoo
big tattoo placement
Tattoo idea
lovely flower tattoo
Flowertattoo, Tattoo Design, Pretty Tattoo, Beautiful Tattoo, Tattoos Piercing, Floral Tattoo
Arm Tattoo for Women| Meaning| Pictures| Tattooing,Arm Tattoo for Women| Meaning| Pictures| Tattooing designs,Arm Tattoo for Women| Meaning| Pictures| Tattooing ideas,Arm Tattoo for Women| Meaning| Pictures| Tattooing tattooing,Arm Tattoo for Women| Meaning| Pictures| Tattooing piercing, more for visit:http://tattoooz.com/arm-tattoo-for-women-meaning-pictures-tattooing/
http://tattoo-ideas.us #Shaded floral tattoo...I probably would not have the pain tolerance for this. #floral #tattoo #flowertattoo #flowertattoos
black and grey flower tattoo // great use of negative space // feather and stone tattooed bride // shoulder tattoo //
Pretty#tattoo #tattoo design #tattoo patterns| http://awesometattoopics624.flappyhouse.com
#flowers#tattoo design #tattoo patterns #tattoo| http://wonderfultatoosthelma.blogspot.com
soft floral tattoo design, flowers, black and white, half sleeve, shoulder
Floral Tattoo Best Side Body Flower Tattoo Design sugar skull Tiny white tattoo #tattoos
most beautiful flower tattoo design and ideas for men and women ,,flower tattoo design,flower tattoo ideas ,flower tattoos,flower tattoo ideas and design
Chest tattoos for women are a beautiful way to hide mastectomy scars. For more beautiful tattoo designs, see our female tattoo ideas here. (Page 5) of results
10 Annoying Things People Say And Do In Tattoo Shops.
Pirate themed sleeve


text: There have been a variety of aspects of the new Ford Shelby GT350 Mustang left a mystery by the automaker since the 2014 Los Angeles Auto Show debut last year and one of those mysteries is the model year of the new GT350. At first, it was believed that it would be a 2016 model year, following up the 2015 debut model year, but if that was the case, then why didn't Ford just call it the 2016 GT350? Well, a comment made by a Ford executive about there being a special reason for the delay in announcing the model year got us all thinking.


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text:
Orr & Reno is
looking for an enthusiastic, energetic individual to join our administrative
team. The successful candidate will
possess a professional demeanor, strong organizational skills and be able to
multi-task. Must be detail-oriented,
have strong computer skills including Microsoft Office, and be a team
player. Responsibilities to include
assisting staff with administrative projects (scanning, file organization, etc)
and providing back up to our receptionist and building & supply
coordinator. A valid drivers' license and the ability to lift up to 50 lbs is
required. This is a full-time position.
Please forward resume to:
Orr & Reno P.A.
Attn:Human Resources
CoordinatorP.O. Box 3550Concord, NH 03301-3550Fax: 603 223-9060email: email@example.com Opportunity Employer
Please click here to apply for this opening.
Orr & Reno is currently
recruiting for 2017 Summer Associates. Applicants must be in the
top 20% of their class, have excellent writing and interpersonal skills, and
have a desire to work in or have ties to Northern New England. The firm
is dedicated to meeting the highest standards of legal excellence and service.
To accomplish these goals, the firm's 25+ attorneys and technical specialists
have diverse practices that include litigation, business, employment, estate
planning and administration, insurance, energy, telecommunications, health
care, government relations, domestic relations, real estate, media, and
immigration, to name only a few. Please forward your resume, transcript,
cover letter and writing sample to firstname.lastname@example.com.
Orr & Reno is looking for an enthusiastic,
energetic, experienced legal secretary. The successful candidate will
possess a professional demeanor and exceptional communication skills, very
strong organizational skills and be able to multi-task. Must be
detail-oriented, have strong computer skills including Microsoft Office, be a
team player and have the ability to work independently. Familiarity with
all aspects of the legislative process, state regulatory agencies and insurance
companies is a plus. This is a full-time, 40 hour per week position.
Orr & Reno offers a competitive salary and benefits
package, which includes medical, dental, life, 401(k), paid vacation, holidays and
sick leave.Please send resume and cover letter to:
Orr & Reno, P.A.
Attention: HR Coordinator
PO Box 3550
Concord, NH 03302-3550
Fax: 603 223-9060
Email: firstname.lastname@example.com
(please send in Word format only)
phone calls please
Orr & Reno PA is seeking
an experienced (1-3 years) litigation attorney to join our law firm.
Qualified candidates will be energetic, possess superior academic credentials,
and have stellar communication and writing skills.
Please submit a cover letter,
resume, transcript and writing sample to:
Orr & Reno, PA
Attention: HR
PO Box 3550
Concord, NH 03302-3550
Fax: (603) 223-9060
Email: firstname.lastname@example.com (Word format)


text:
By working closely with you, we can understand your business and develop a bespoke recruitment and/or training package, which reacts to your business needs and delivers an effective solution.
If you are searching for a new job, take a look at the vacancies we have available. We want to help you to make your next career move.
Our candidates are vital to our success. We place great emphasis in ensuring we find you the right employment opportunity. We therefore assess not only your skills and competencies but also personal goals and aspirations.
Here at LMR, we offer the full recruitment solution for your company. As an independent specialist recruitment company, we are able to provide a flexible and bespoke service, for all your staffing requirements.
We have high quality trainers available who have vast experience over many different topics. If your business has a particular training issue, we can work with you to create a bespoke training course that fits your exact requirements.
Our client, a leading global manufacturer of PVC products for the domestic, commercial and industrial markets, based in Teesside, is recruiting for a CAD Technician Designer to join their project team on an […] Read more
Our client, a successful manufacturing business based in Teesside, with a global customer base, are looking to appoint a qualified and experienced Management Accountant to join their growing team. This is […] Read more
Our client, a leading manufacturer of bespoke engineering components based in Wellingborough, wishes to recruit a Part Time Data Input Clerk to join their team. The Role: Your main duties will […] Read more
How has the minimum wage increased over the last 16 years? There has been a lot written in the newspapers and on-line about the recent increases in the National Minimum Wage and the […] Read more


text:
Another save with insane shuttering.
This is summer save.
So if you have 2nd heroless stack as reinforcement for first line of troops, they will not get bonus from the current main army hero.
Hey there
1) No, the extractor is still here and working, so you keep your resources.
2) The malus counts for all the Empire
2) You'll get -10x per each city you have (excluding capitals) empire-wide for as long as you own those cities. On top of that, each city haveSublustris 14 Hours Ago
Which version of the .NET framework are you running ? Is it up-to-date (Windows Update) ? Did you try re-installing it ?
Do you have any special
Sorry if I chime in : wouldn't it be possible to add the production below the stored amount ?
I personally don't have an issue with hovering the
I have attempted everything in the workarounds thread to no avail, and have nearly pulled my hair out in frustration. I played this
for complaining about the lack of a feature you'd never use...
...Maybe that's why pretty much nobody implements this feature
1) If you got the extractor tech and you build a district on that place, you get the extractor for free. So if you build a district on existing watchtower/extractor,Groo 1 Day Ago


text:
Status Updates From Magic Bites (Kate Daniels, #1)Magic Bites (Kate Daniels, #1)
by Ilona Andrews (Goodreads Author)
Status Updates (showing 1-30 of 7,425)
Rachel is on page 52 of 260
Oooh. I like. Fast pace, funny, UF, PNR.... just my kind of book.— May 25, 2016 08:19AM Add a comment
Aria von Dimple is on page 105 of 260
I can't believe I ever forgot how GOOD those books are . . .— May 23, 2016 10:48PM Add a comment
Maxine Robinson is on page 90 of 260
"Thank you very much, Maxine," I said, unable to take my gaze off the monster at my window. "I have to go now." "Any time, dear. Play nice with the wolf." Seriously I think Maxine is an awesome minor character. I like her name, it's pretty great.— May 21, 2016 03:21AM Add a comment
Maxine Robinson is on page 2 of 260
time for a re read and to catch up.— May 20, 2016 08:57AM Add a comment
Aria von Dimple is on page 41 of 260
FINALLY rereading the series. I feel like I've postponed this for so long and I've missed Kate so much.— May 20, 2016 12:10AM Add a comment
Enid is finished
3.5 stars. An okay read, not sure I'll be picking up the next one in the series.— May 14, 2016 11:54AM Add a comment
moon lit is on page 160 of 260
I want to get into this book. I really do. However I am having trouble with the writing style. It feels clunky at times. Maybe a product of two authors? I hope it smoothes out soon.— May 14, 2016 04:13AM Add a comment
moon lit is on page 85 of 260
This was recommended to me by several people. While I can see why they liked it I am having trouble getting into it. I don't know.— May 13, 2016 12:58PM Add a comment
Leo is 70% done
You know when you're in the middle of a group and they're talking about something but you have no idea what it is? Yiup, that's how I feel while reading this book, like i've just been dropped in the middle of a story and no one is making an effort to let me catch up.— May 12, 2016 12:55PM Add a comment
Leo is 51% done
Getting harder and harder to finish, don't remember the last time I spent so many days reading a book.— May 12, 2016 07:44AM Add a comment
Anna Serene is 79% done
I'm still not sure how this is Kate's fault. The fact that Crest isn't their guy doesn't negate the fact that there was a head in her front yard.— May 10, 2016 04:40PM Add a comment


text:
Meek Mill Beat Drake and Kendrick Lamar for a 2016 Billboard Music Award | Meek Mill | Music | BET
Wiz Khalifa and Drake took home other hardware.
Wiz Khalifa and Drake took home other hardware.
"I'm so thankful he got the chance to join his idol on stage."
Two gods, side by side.
Azealia went on a rampage yesterday and added 3 more beefs to her list.
The radio host doesn't think the two are on the same level.
Ice Cube has been manifesting this for quite some time.
The creator of 'Hamilton' is a man of many talents and music tastes.
From one king to another.