text:
Joined: 10 October 2011
Posts: 16118
Previous Shop
I m opening my 2nd gallery in just few months,God I m so happy and excited and the all credit goes to my dear visitors
Thank You Guyz
I'm Kriti
I m a Student and live in New Delhi,India
I'm 17 years old &
Just completed my schooling in March
I m a big big big big fan of Karan Singh Grover
I can Make everything which is non- animated
I accept requests only when the shop is open
So request only at that time'.or else your request will not be considered
(O) indicates OPEN and (C) indicates CLOSE
For request
Provide me HQ pics
Provide me Text
One Request at a time
You will get your requests asap
(c)KITTY CREATIONS/INDIA-FORUMS
p.s - Buddy me for Pms
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shakurox15, Andy_Loves_ASYA, Kiarawinget16, reet_26, siliya21, BeyondHorizon, SheLooks18ToMe, smileysmi, -Chaitra-, tragedy, Surbhilover, Afr.uu, prettyji, -Soha-, Enchantress, zona_malik, cool_star14, maneesha_sanker, supriya.arshi, Ohmyjerryworld, Shonadeepa, Fimmy, mysticlover, TANVI_SEXY, anniemathiaskr, yogini64, Coolioqueen, ...Mallu..., TheSexyDevil, Kanchi.., SwaNia_2, sadffi, 18mypride, sadafarsha, shalini_arsha, ..Roop.., Cherishh, dreamyharika, Legilimens., Roxxy47, Keisha., anjoriiii., starsanjana, OceanicHeart., AnnyLaughaholic, -MissBoiiVamp-, MSN_Vanny, 01aaradhya, sweetydiyafrien, .Mandy., MS-meghasharma, Ianoconic., OptimisticEyes, KaSh-Maneet-Fan, prava55663, crazysky, pakpearl, Radhikerani, kuhu_Arsha, chand1234, lazychick.maria, dancersqueen, ruhiluvzaya, MrToolConfuser, ..vidhi.., Cieli.Santi, _Maggie_, DreamCatcher.., Dark_Chocolate, HR-DMG4life, -FrozenRain-, Black_Stone, Born2Dance, Madhu_ArSha, Anapneo3003, nishuu93, pikychu, .Glyceriene., Roses-khushi, Trouble., Fearless_Lover, -Araina-, sweetdesire, ara_000, Joseph_A, NandiniRaizadaa, Reenatyzed, dumas, leelaa9, spvd, .CookieMonster.,
Joined: 10 October 2011
Posts: 16118
KSG,Kajen,AsYa,Kriyansh,shakti,AJS,VivianD'sena,Drashti,Jennifer,Surbhi Jyoti,RishBala,ArmaanRiddhima,Deepika,Katrina,RajatTokas,Ranbeer,Varun Dhawan,Sidharth Malhotra,Maaneet,PriyanksChopra,Honey Singh,SelenaGomez,Miley Cyrus & many mores
There are so many peeps on I-F
& many mores
Photoshop CS5
I use textures From Deviantart
some from kinjal & maria
& some from naureen
& random google search
Do not claim my work as yours
Do not crop my work
Don't post my creation on any other sites without my permission
Give me my credit
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Joined: 10 October 2011
Posts: 16118
1. ArSha , AsYa,AJS,Surbhi Jyoti,Drashti Dhami & icons (Page 17)
2. Requests (Page 31)
3. Drashti Special Update (Page 50)
4. Requets + Gift + We want KR back siggie (Page 70)
5.KaJen,Parineeti,Ranbir-Dips,AJS,Shakti,Lungi Dance,Texture & Req (Page 85)
6. Requests + Gift (Page 109)
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Joined: 10 October 2011
Posts: 16118
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Joined: 10 October 2011
Posts: 16118
Hey Guyz
I know now u all expecting a update today
but sorry to disappoint u all i m not going to update tonight coz i didnt make any siggie yet
I m down with fever from last one week so didnt get any time to make
ohfo kaam ki baat bolna toh bhul hi gyi
Thank u so much guyz for all the likes and comments u shower on my first thread
and i m expecting the same in this thread too
Love u guyz
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Bijal's Creations Gallery [Updated Pg 119]
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||CinderellaCreations#1||[O][email protected]/Closed
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text:
A private student loan that's personalized for you
Welcome students!
SunTrust is here to assist you with any questions you have about financing your education at Cabrini College.
With Custom Choice, you can personalize your private student loan:
The Custom Choice Loan can help fill the gap when federal loans, scholarships, and grants aren't enough.
- Competitive interest rates
- Several repayment options and choice of rate type (fixed or variable)
- No origination, application or prepayment fees
- Interest rate reduction for ACH payments1 (SunTrust clients earn extra)
- Graduation reward2
Interest Rates
- Interest rates are determined by (1) borrower's and cosigner's (if applicable) credit histories, (2) the repayment option and loan term selected, and (3) the requested loan amount and other information provided on the online loan application
- Current variable rates range from 3.741% APR to 9.154% APR3
- Current fixed rates range from 4.601% APR to 10.330% APR4
Loan Options
- Choose what's best for you: upon approval, applicants can compare loan options to determine the impact to their monthly payment amount and total loan cost
- Choice of rate type: fixed or variable
- Choice of repayment term: 7, 10 or 15 years5
- Choice of repayment option:6
- Immediate Repayment7, Interest-Only7, Partial Interest7, Full Deferment7
- Students can select full deferment or can select a repayment type that allows them to make partial or full payments while in school7
- Grace period generally six months8
Loan Limits
- Minimum loan amount: $1,0019
- Annual loan maximum: $65,00010
- Aggregate student loan limit (total amount of student loan debt allowable): $150,00011
- Graduation reward: 1% principal reduction2
- Up to 0.50% interest rate reduction for automatic payments1
- No application, origination or prepayment fees
- Cosigner release option available12; for more details, click here.
- Student loan protection in case of death/disability14
To be eligible for a SunTrust Custom Choice Loan, the student must:
- Be enrolled at least half-time or more in a Title IV program at an eligible school
- Be a U.S. citizen or permanent resident
- Be the legal age of majority, or at least 17 years of age at the time of application if applying with a cosigner who meets the age of majority requirements in the cosigner's state of residence13
- Have a permanent residency address that is NOT in Iowa or Wisconsin
Do students need a cosigner?
- A cosigner is not always required, but most students, especially those without a substantial credit history, may need a creditworthy cosigner to qualify
- Either the cosigner or the student can start the application the EasyInviteSM tool, within the online application, allows the cosigner or the student to be invited to the application
- Find out more about how a cosigner can help
- A cosigner release option is available12; for more details, click here.
Any questions?
- Review Frequently Asked Questions about the Custom Choice Loan
- Call a SunTrust representative at 866-232-3889
Step one - Apply Online:
- Students and cosigners, if applicable, apply online (they may apply at the same time or during separate sessions)
- An Application and Solicitation Disclosure outlining current interest rate ranges, loan cost examples, federal loan alternatives, and other general loan information is presented electronically to the student borrower and cosigner, if applicable
Step two - Loan Options:
- Upon passing the initial credit review15, loan options (including interest rates, repayment plans and repayment terms) are presented online
Step three - Loan Documentation:
- Once loan options are selected, a list of required documentation, including an Applicant Self-Certification Form, is presented
- Required documentation must be submitted before the loan process will continue
- Documentation can be uploaded online or submitted by fax or mail
Step four - Approval Disclosure:
- After all required documentation has been received and approved, an Approval Disclosure will be sent outlining the terms of the loan based on the preliminary loan amount before school certification
- The Approval Disclosure must be accepted within 30 calendar days if the student and cosigner, if applicable, agree to the loan terms
- Acceptance of this can be given through the applicant's online account, by fax or by mail
Step five - School Certification:
- Certification of the loan is required by the student's school of attendance and will be requested by SunTrust
- The school will certify the loan ensuring that the student is enrolled at least half time, that the loan amount is correct, and will confirm disbursement specifications
Step six - Final Disclosure:
- After school certification is received, the final loan terms will be outlined in a Final Disclosure which will be mailed to both the student borrower and cosigner, if applicable; for convenience, the Final Disclosure is also available online
- 3 Day rescission period the student borrower and cosigner, if applicable, will have three business days to cancel or rescind the loan
- SunTrust must wait until this three business day period has expired before disbursement of funds can take place
- No action is required by the borrower and cosigner, if applicable, unless either desires to cancel or rescind the loan
Step seven - Loan Disbursement:
- Amounts and timing of when a loan is disbursed is given to SunTrust by the school
- A loan may have up to four disbursements and disbursement amounts do not have to be equal
- Funds are sent to the school and applied to the student's account; any overage of funds above/beyond what is owed to the school is handled between the school and student
What is a cosigner?
A cosigner is an additional applicant besides the student, such as a parent, guardian, grandparent or other person, who will bear the same legal responsibility as the student.
Why is a cosigner important?
Many students don't have a substantial credit history or have other concerns about being approved for a private student loan, and adding a creditworthy cosigner may help them qualify and also obtain a lower interest rate.
What makes a good cosigner on a loan?
A good cosigner:
- Has a substantial credit history
- Does not have any serious negative items on their credit report
- Meets their credit obligations on time
- Is not over burdened with debt
- Has steady employment and/or income sufficient to meet debt obligations
Can a cosigner be released from the loan?
The cosigner can be released from liability after the first 48, consecutive principal and interest payments are made on time12. The borrower must meet credit criteria on their own at that time. For more details, click here.
What if there is an unfortunate event, such as death or disability, of the student borrower?
In the event of the primary borrower's death or permanent disability, the loan will be forgiven. Proper documentation is required and the cosigner won't be responsible for repayment.14
How is a cosigner added to a Custom Choice loan?
Applying as a cosigner takes about 15 minutes. Either the cosigner or the student can start the application the EasyInviteSM tool, within the online application, allows the cosigner or the student to be invited to the application.
SunTrust recommends comparing all aid alternatives including grants, scholarships, and federal loans, prior to applying for a private student loan. Before selecting a private student loan, compare options offered by SunTrust.
1 Interest rate reductions offered for automatic payment from a bank account: 0.25% interest rate reduction for ACH payment from any bank account and an extra 0.25% interest rate reduction when ACH payments are made from a SunTrust Bank account. ACH interest rate reduction(s) apply when full payments (including both principal and interest) are automatically drafted from a bank account. Interest rate reduction(s) will remain on the account unless (1) the automatic deduction of payments is stopped (including times during deferment or forbearance) or (2) there are three automatic deductions returned for insufficient funds within the life of the loan. The additional SunTrust Bank account ACH interest rate reduction will be applied after the first automatic payment is successfully deducted from a SunTrust Bank checking, savings or money market account and will be removed for the reasons stated above or if you close your SunTrust Bank account. In the event the benefit(s) is removed, the interest rate stated in the Credit Agreement shall be applied in accordance with the terms of the Credit Agreement.
2 Proof of graduation (certified copy of diploma) must be submitted to the loan servicer within 90 days after graduation. The 1% principal reduction is based on the net disbursed loan amount which is the total dollar amount of all disbursements made, excluding the dollar amount of any reductions, cancellations, or returns, as applicable. To receive the reward, no more than one late payment (payment received more than 10 calendar days after the due date) is allowed and the student borrower must have earned a bachelor's degree or higher. This reward is available once during the life of the loan, regardless of whether the student borrower receives more than one degree.
3 The variable interest rate for each calendar month is calculated by adding the current One-month LIBOR index (captured on the 25th day of each month, or the next business day thereafter, of the month immediately preceding such calendar month and rounded up to the nearest 1/8th of one percent) to the margin. The current One-month LIBOR index is 0.500% on 05/01/16. LIBOR stands for London Interbank Offered Rate. The One-month LIBOR is the Current Index, as published in the "Money Rates" section of the Wall Street Journal (Eastern Edition). The interest rate will be determined after you apply. The variable interest rate and Annual Percentage Rate (APR) depend upon (1) the student's and cosigner's (if applicable) credit histories, (2) the repayment option and loan term selected, and (3) the requested loan amount and other information provided on the online loan application. If approved, applicants will be notified of the rate qualified for within the stated range. The variable interest rate will increase or decrease if the One-month LIBOR index changes. Rates and terms effective for applications received on or after 05/01/16.
4 Current fixed interest rates depend on (1) the student's and cosigner's, if applicable, credit histories, (2) the repayment option and loan term selected, and (3) the requested loan amount and other information provided on the online loan application. If approved, applicants will be notified of the rate qualified for within the stated range. The fixed rate assigned to a loan will never change except as required by law or if you request and qualify for the ACH reduction benefit(s). Rates and terms effective for applications received on or after 05/01/16.
5 Click here to see payment examples. Certain repayment terms are only available for loan amounts of $5,000 or more. Click here to find out more about available options.
6 Any applicant who applies for the loan the month of, the month prior to, or the month after their graduation date, as stated on the application or certified by the school, will only be offered the immediate repayment option. Partial Interest Repayment is available on loans of $5,000 or more.
7 Making interest only or partial interest payments while in school will not reduce the principal balance of the loan. Partial Interest Payment plan of $25 per month is available on loans of $5,000 or more; click here to see a payment example. For Partial Interest and Fully Deferred loans, any accrued and unpaid interest will be capitalized (added to your principal loan balance) when repayment of principal and interest begins. Payments may be deferred (a) while student is enrolled at least half-time at an approved school, and (b) during the 6 month grace period after graduation or dropping below half-time status, but the total initial deferment period, including grace period, may not exceed 66 months from the first disbursement date. There are no prepayment penalties. For Immediate Repayment loans, repayment of principal and interest begins 30-60 days after the final disbursement. The minimum monthly payment is $50.00.
8 Typically the grace period is six months from (a) the date the student graduates, (b) the date the student drops below half-time status or (c) the date that is 60 months from the first disbursement date. The immediate repayment option does not have a grace period.
9 The minimum loan amount is $1,001 with exceptions based on the student's state of permanent residence, as follows: Alaska: $5,001, Colorado: $3,001, New Mexico: $2,501, Oklahoma: $4,901, Rhode Island: $5,001, South Carolina: $3,601. The Custom Choice Loan is not available to students whose permanent residency state is Iowa or Wisconsin.
10 The maximum annual loan amount is determined by the school's cost of attendance, minus other financial aid such as federal student loans, scholarships or grants, up to $65,000.
11 The aggregate maximum student loan debt allowed is $150,000 (includes all student loans and certain unsecured consumer debt).
12 Request for the cosigner to be released can be made after making (1) the first 48 consecutive monthly principal and interest payments on-time (received within 10 calendar days after the due date) or (2) an amount equal to the first 48 consecutive principal and interest payments, provided that (a) such payments are made during the first 48 months of principal and interest repayment and (b) no prior late payments were made. At the time of the request, the student borrower must be a U.S. Citizen or permanent resident alien, meet credit criteria, be enrolled for automatic deduction of monthly payments from a bank account, and have had at least one payment on the loan transferred electronically from a bank account. Cosigner release may not be available for loans in a forbearance status.
13 The legal age for entering into contracts is 18 years of age in every state except Alabama (19 years old), Nebraska (19 years old, only for wards of the state), and Mississippi and Puerto Rico (21 years old).
14 If the student borrower on a loan dies after disbursement of all or part of the loan and the loan has not previously become a charged off loan due to non-payment or bankruptcy, then the outstanding principal and accrued interest balance on such loan shall be forgiven if the servicer is informed of the student borrower's death and receives acceptable proof of death. If the student borrower on a loan becomes totally and permanently disabled and the loan has not previously become a charged off loan due to non-payment or bankruptcy, the student borrower may apply to have the loan balance discharged by completing a discharge application.
15 The initial credit review is based on all the information you and your cosigner (if applicable) provide during the application process and the information obtained from your credit report (and any cosigner's credit report). If you pass the initial credit review, documentation will be requested to verify your identity and annual income. A signed Credit Agreement and Applicant Self-Certification Form are required before a final loan decision is made. Your school will be required to certify a SunTrust private student loan prior to disbursement.
EasyInvite is a registered service mark of First Marblehead Corporation.
Certain restrictions and limitations may apply. SunTrust Bank reserves the right to change or discontinue these programs without notice. Availability of all loan programs is subject to approval under the SunTrust credit policy and other criteria and programs may not be available in certain jurisdictions.

subset: commoncrawl


text:
Brenda was taught acting by Sanford Meisner at the Neighborhood Playhouse in New York.
Though, she was born in Brooklyn, she grew up in Dallas, Texas.
Dated Michael Douglas around the time she was promoting "Zorro: The Gay Blade".
She was arrested for posession of drugs in 1984, which she claimed were a set-up from her boyfriend.
No one has discussed Brenda Vaccaro yet. Start a conversation!
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text:
Another great week! In between college football games, check out these five links to articles guaranteed to make you think a little bit . . .Dear Stay-At-Home Mom - to all the stay-at-home moms out there (including my wife), this article is for you.Be Bold, Go Out and Chase Your Dreams - challenging post based off of Diana Nyad's failed attempts to swim from Cuba to Florida.Christians Victims of Rising Hostility - do you think Christians are getting picked on for their faith? You're … [Read more...]
Archives for August 2012
Five for Friday
Children of Hope
If you've come to Mt Vernon the past few weeks, you've heard about an incredible ministry partnership opportunity. For those of you who haven't heard, let me share an incredible ministry opportunity we have called Children of Hope. Several years ago, Mt Vernon took a mission trip down to the Dominican Republic. While there, our church saw God open a door for us in the Batey (slums) of Baharona. If you don't know, Haiti and the Dominican Republic share the same island. Dominican Republic is poor. … [Read more...]
Work Hard
BIG Idea: Work hard at whatever you do.When I landed my first "ministry" job, I had a choice to make. I had just returned from a missionary stint in Africa and got a job as a youth pastor in Mississippi. I was in full-time pursuit of my Master's degree from seminary. I was engaged to be married to my wife Robin. The pastor at the time told me honestly, "this is a full-time job, but we can only pay you 3/4 time." Their budget cuts did not allow them to pay a full-time salary. With a starting … [Read more...]
God, If You're Not Up There, by Darrell Hammond
I was drawn to this book because I'm an avid Saturday Night Live fan. The show's ability to weave entertainment with contemporary social commentary makes it a show that continues to be relevant into its third decade. Darrell Hammond is one of the more recognizable faces on the show because of his longevity (14 seasons, a record). His brilliance was his ability to impersonate almost anybody. While his most famous impersonation was Bill Clinton, he did a whole host of other impersonations, inc … [Read more...]
Step One: Pray Together
I don't know where you are in your marriage. You may be just starting out or rounding out twenty years together. Your fire may still be burning bright or may have died out a long time ago, leaving only lukewarm embers.As I've counseled with couples about their marriages, I've found that every situation is unique. Every marriage has its own baggage and history. But there are a few things that will help any marriage. Here's one I want to share with you today.Your marriage may be on the rope … [Read more...]
Why We Adopted
Adoption has become a central part of my life story, and it's a blessing that I'm thankful for every day. Why did Robin and I adopt? There were several reasons that led us to adopt our first two children (Zeke and Shepherd).1. We wanted children. We both knew even before we married that we wanted several kids. Before it was even time to start trying for kids, we had agreed that we wanted to have several of our own and adopt several (nationally and internationally). Our plan was to have a few of … [Read more...]
Kicking the Crutch
BIG Idea: There is no excuse for sitting on the sidelines of the Kingdom.A few days before my sixteenth birthday, my family moved several hours away to a new city and a new church. This experience was as traumatic as you might imagine. No kid likes moving to a new area and having to make new friends. I had been very attached to my previous youth group, which ran around 50-60 kids. The first Sunday at my new church, there were five students, including my brother and I. It was … [Read more...]
Eisenhower: The White House Years, by Jim Newton
I've read several books where Dwight D. Eisenhower was a principal player, most notably as a general in World War II. This book, however, was the first historical biography (I've read) that exclusively chronicled the White House years of Eisenhower. Part of my interest in the 1950s stems from the idyllic place it holds in the lore of American culture. For many, the 1950s was the high point, the pinnacle of American success. Many older Americans who look at today's culture with disdain hearken lo … [Read more...]
Marriage: The First Decade (part 2)
This past June Robin and I celebrated ten years of marriage. I wanted to take a moment and share ten things I learned. Last week I shared the first five. Today I'll share five more things I've learned over the years.6. I know why so many couples think divorce is the easiest option. I know this is something I'm probably not supposed to admit as a pastor, but I know why divorce can be so tempting. During our first ten years, Robin and I have been at places where Robin and I dug in so hard on oppo … [Read more...]


text:
The FCC Chairman's Many Excuses
Tom Wheeler tries, and fails, to justify his execution of net neutrality.
A few years ago, Internet users, democracy activists, and entrepreneurs got wind of a proposed law, SOPA, that would have changed the Web's basic architecture to the benefit of a few media giants. So they organized protests for several months to oppose the law. Faced with this opposition, some senators and members of Congress who supported the Stop Online Piracy Act had a moment of sudden insight: They realized they were wrong. They had gone to Washington to help the very people who were now protesting them—the risk-takers, the job builders, the social changers. Instead of digging in or just brushing off the criticism, these policymakers learned from the protests and chose to stay on the right side of history.
Today, millions of Americans from every sector are up in arms over Federal Communications Commission Chairman Tom Wheeler's proposal to end network neutrality and authorize cable and phone companies to discriminate among websites and charge Web giants for "fast lanes" while keeping the rest of us in a "slow lane."
Despite the outcry, Wheeler isn't changing sides, he's making excuses. In the past week, the chairman has published two blog posts and given one speech (at the cable lobbying association he used to head), while two law school professors, Kevin Werbach and Phil Weiser, have taken to the Huffington Post to defend him.
Wheeler's posts attempt to placate critics, but let's get one thing straight: He is not backing off his plan to hand the keys to the Internet over to the cable and phone industries. The chairman told the cable industry to "put away the party hats" because he's not actually going to kill network neutrality. But his proposal is the same plan offered by the largest cable and phone companies, which have tried to kill network neutrality for almost a decade. Since 2006, the phone and cable industries have proposed a world where they won't "block" any websites, but they will simply create a lane for all websites and then charge anyone who wants better service for a fast lane. They have fought a nondiscrimination rule for at least eight years, using tens of millions of dollars. The tolls for the fast lane may be tied to bandwidth or a company's revenue. Finally, the cable and phone giants want this world to have no clear rules—just vague principles about what might be "commercially reasonable," which is an invitation for small companies to sue the giants if they're unhappy. Since the cable and telephone companies have more FCC lawyers than most companies have employees, they will scare off most potential companies suing and then beat the rest in "FCC court."
That's basically what the chairman is backing—the often proposed AT&T/Verizon plan. It's the plan that President Obama repeatedly opposed, beginning in 2006. It's the plan that network neutrality advocates have fought against for eight years. He is emphasizing what AT&T always conceded: that carriers would be unable to "block," that a provider will not "degrade" whatever is today's existing service (and tomorrow's "slow lane"), and therefore the Internet will remain an "open pathway." But as Wheeler, Werbach, and Weiser concede, he will permit paid fast lanes. He will even permit cable and phone companies to offer fast lanes exclusively to one competitor and not to others. The only real restriction is that fast lanes can't be offered exclusively to a company also owned by the cable or phone company. So Comcast wouldn't be able to offer a fast lane only to NBC.com—which it owns—but could offer it only to Netflix or only to Apple, and nobody else, under the terms of his proposed rule.


text:
Will Nanopore Sequencing Make it Obsolete?
Financial Structures Can Determine Where Startups...
Bridging Drug Discovery's Valley of Death...
From Our May 1 Issue: Immunoassays...
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|Publication number
|Publication type
|Publication date
|Jul 31, 1962
|Filing date
|Jul 21, 1958
|Priority date
|Jul 21, 1958
|Publication number
|Metz E David
|Original Assignee
|Pacific Semiconductors Inc
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (12), Referenced by (15), Classifications (11)
|External Links: USPTO, USPTO Assignment, Espacenet
July 31, 1962 E. D. METZ 3,047,780
PACKAGING TECHNIQUE FOR FABRICATION oF VERY SMALL sEMIcoNDUcToE DEVICES Filed July 21, 1958 \-Q J5 \9 J5 j! fav 20 @QA N INVEN TOR. @camice eg,
United States Patent G r' 3,047,780 PACKAGING TECHNIQUE FOR FABRICATION F VERY SMALL SEMICONDUCTOR DEVICES? E. David Metz, Los Angeles, Calif., assignor to Pacific Semiconductors, Inc., Culver City, Calif., a corporation of Delaware Filed July 21, 1958, Ser. No. 750,008 6 Claims. (Cl. 317--234) This invention relates to semiconductor devices and more particularly to improved microminiature devices.
It has long been recognized in the semiconductor art that a hermetically sealed package, wherein the semiconductor crystal is mounted within a miniaturized housing, the central region of which is composed of glass, affords a foundation for designing the ideal package.
In the semiconductor art, a region of semiconductor material containing an excess of donor impurities and yielding an excess of free electrons is considered to be an impurity-doped N-type region. An impurity doped P- type region is one containing an excess of acceptor impurities `resulting in a deficit of electrons, or an excess of holes. Stated differently, an N-type region is one characterized by electron conductivity, whereas a P-type region is one characterized by hole conductivity. When a continuous, solid crystal specimen of semiconductor material has an N-type region adjacent a P-type region the boundary between the two regions is termed a P-N or an N-P junction, or simply a junction. Such a specimen of semiconductor material is termed a junction semiconductor device and may be used as a rectifier. A solid crystal specimen having two such junctions is termed a transistor. In addition to the junction type semiconductor devices, the point Contact type and diffused junction type semiconductor devices are also now well known to the art.
The term semiconductor material as utilized herein is considered generic to germanium, silicon and germaniumsilicon alloys, and is employed to distinguish these semiconductors from metallic oxide semiconductors such as copper oxide and selenium.
As the art of miniaturization has recently developed in the electronics industry it has been found necessary to reduce still further in size glass-to-metal packages housing the semiconductor devices. Inasmuch as the active crystal element of a semiconductor diode, for example, amounts to but a very small fraction of the total volume of the completed package, it is clear that as the volume of the package approaches that of the crystal the more nearly will optimum miniaturization be achieved. None of the prior art semiconductor devices presently available even approach this desired goal.
The prior art devices are typically housed in packages which involve a glass-to-metal seal requiring close manufacturing tolerances. Whisker contact must generally be made to one surface of the crystal which imposes a further manufacturing problem due to the tolerances which must be maintained. Due to the above limitations, the present art semiconductor crystal devices are expensive of manufacture and sometimes are not as reliable as is desired.
The present invention overcomes all of the above diiiiculties attendant in the manufacture of small semiconductor devices.
According to the basic concept of the presently preferred embodiment of this invention there is produced in accordance with well known prior art techniques such as fusion or diffusion a P-N junction semiconductor crystal. Metal tabs whose thermal coefficient of expansion is close to that of the semiconductor crystal material are ohmically bonded to opposite sides of the crystal, thus providing a -low resistance contact to the P and N regions of the crystal. The perimeters of the tabs are made to approximate those of the crystal. Thereafter a passivating film Patented July 3l, i962 or coating is bonded to the exposed surfaces of the crystal to eventually seal the same from the ambient, the film also making a hermetic seal with the tabs. If desired, wire leads may be butt welded or otherwise joined to the metal tabs. Thus, the size of the completed device, in accordance with the present invention, is not very much larger than that of the active crystal itself.
Accordingly, it is an object of the present invention to provide an improved semiconductor hermetically sealed device.
Another object of this invention is to provide a semiconductor device, the total size of which approaches that of the active crystal element.
Still another object of this invention is to provide a very small semiconductor device whose mechanical stability is greater than has heretofore been achievable.
Yet another object of this invention is to provide a very small semiconductor device of increased reliability.
A further object of the present invention is to provide a very small semiconductor device which lends itself to ease of manufacture thereby making it cheaper to produce.
A still further object of this invention is to provide a very small semiconductor device which requires fewer and less critical operations in manufacture.
While the novel and distinctive features of the invention are particularly pointed out in the appended claims, a more expository treatment of the invention, in principle and in detail, together with additional objects and advantages thereof, is afforded by the following description and accompanying drawing in which like reference characters are used to refer to like parts throughout the various views.
In the drawing:
FIGURE l is a cross-sectional view showing a diffused junction semiconductor crystal diode 'and a plated metal tab during an early step in the production of a device in accordance with the present invention;
FIGURE 2 is a cross-sectional view of the metal tab :and crystal of FIGURE 1 showing how they would appear after being joined together;
FIGURE 3 is a cross-sectional view showing a second metal tab joined to the subassembly of FIGURE 2;
FEGURE 4 is a cross-sectional view of a completed semiconductor device in accordance with the presently preferred embodiment of this invention;
FIGURE 5 is a cross-sectional View of `a rst alternate embodiment of a semiconductor device in accordance with the present invention;
FIGURE 6 isa cross-sectional View of a second alternative embodiment of a semiconductor device in accordance with the present invention;
FIGURE 7 is a cross-sectional view of a third alternative embodiment of a semiconductor device in accordance with the present invention; and
FIGURE 8 is a cross-sectional view of a fourth alternative embodiment of a semiconductor device in accordance with the present invention.
Referring now to the drawings, and more particularly to FIGURE 1 there is shown a cross-sectionl view of a semiconductor crystal body 10 and a metal tab 11 which is to be lbonded to the crystal body itl' to provide `a low resistance ohmic contact thereto. For purposes of example, it will be assumed that the semiconductor body ltl is of silicon and includes a P-type conductivity region 12 and an N-type conductivity region 13 separated by a P-N junction 14. The P-N junction may be produced by any method known -to the art, such as diffusion, for example. It should be pointed out, that while this invention will generally -be described with reference to P-N junction devices, it is equally applicable to semiconductor electrical translating devices which do not necessarily include a P-N junction but which nevertheless provide rectification at a barrier such as by the disposition Iof a film on the surface of a semiconductor body. Such a film may permit the device to exhibit diode action or even exhibit the characteristics of a voltage sensitive variable capacitor.
In the illustrative example under consideration the metal tab l1 should preferably be of a metal whose thermal coefficient of expansion is close to that yof the semiconductor material. Such metals as Kovar and molybdenurn have been found by the inventors to be particularly satisfactory.
In order to better form a low resistance contact between .the crystal l@ and the metal tab 11 a coating of gold 1S is predeposited about the outer surface of the tab 11. It has been found advantageous to slightly dope the gold with a conductivity-determining active impurity of the same type as that of the semiconductor crystal region with which the metal tab is to make contact. Thus, with P- type conductivity it would be desirable to use a P-type conductivity impurity as the dopant in the gold layers 15; such a dopant might be aluminum, for example.
Referring now to FIGURE 2, the metal tab 11 is shown to be bonded to the crystal 10 to form a subassembly. The bond between the crystal and the tab is accomplished by a method well known to the art, whereby the metal tab and the semiconductor crystal are placed in an oven, and heated to a temperature suiiicient to cause alloying between the silicon and the gold to produce a silicongold eutectic or an alloy region 18 (if, for example, silicon is to be the semiconductor material used). Temperatures ranging from about 360 to 385 C. may be suitably employed.
Next, the subassembly of FIGURE 2 Will have a second metal tab 19` coated with a layer of gold 20 bonded to the opposite face of the crystal l to produce a low resistance contact to N-type conductivity region 13 (see FIGURE 3). Again there will be produced a silicongold euctectic at 21, intermediate to the semiconductor crystal body and the metal tab 19. It should be pointed out that it may also be desirable to dope the gold layer 20 `with an N-type conductivity determining impurity, such as Phosphorus, for example, for reasons hereinabove explained with ref erence to tab 11.
Referring now to FIGURE 4, there is shown a completed diode to which contacts have been provided. A first metal electrode 23 which may be made of copper, for example, is bonded to the metal tab 11 by means such as welding well known to the art. A gold coating 22 should be predeposited upon the electrode 23 to insure better bonding of the electrode to the tab. In order to provide some resilience to the completed package a thin metal ribbon 25 which should preferably have a gold coating 26 deposited thereupon is employed as the second electrode,
`it being bonded to the second metal tab 19 as shown. A
second heavier electrode may then be welded to the ribbon 25 to lend greater mechanical stability to the package. The electrode 30` should also preferably be coated with a layer of gold 31. After the two electrodes have been connected to the metal tabs as hereinabove described, a relatively thick polysiloxane film 32, i.e., greater than l micron in thickness will be deposited around and surrounding the crystal 10 and the tabs 11 and ll'9 as may 4be seen in FIGURE 4.
A thin passivation film underlying the polysiloxane film 32 is deposited in accordance with the methods described and claimed in co-pending US. patent application entitled Improved Surface Treatment of Semiconductor Bodies7 by Allan L. Harrington and Stanley Pessok, Serial No. 749,624, and U.S. patent application entitled Improved Method and Means for Forming Passivation Films on Semiconductor Bodies by Allan L. Harrington and Stanley Pessok, Serial No. 749,622, both filed concurrently herewith and assigned to the assignee of the present invention.
More particularly, a relatively thick polysiloxane film 32 is produced atop the thin film by a method hereinafter to be described which causes it Ito be molecularly bonded to the underlying silicon surface. The lm can be Ibuilt up to any thickness desired and for the purposes of this invention thicknesses ranging from l to 25 microns will normally be adequate.
In order to produce the relatively thick film a preesterilied semiconductor surface, herein silicon, for purposes of example, is reacted with polyfunctional organosilicon monomers to produce cross-linked or space polymers integrally bonded to the silicon surface. The major reactive ingredient in the polymerization reaction is a tri-functional organo-silicon compound having the general formula: RSiX3 where R is a monovalent hydrocarbon radical (eg, methyl, ethyl, phenyl, epoxy, vinyl, nitrile, etc.), and X is a reactive group capable of propagating a chain and cross-linking it to other chains. Among the many examples of suitable compounds are ethyl, triethoxy, silane, methyl, triethoxy silane, phenyl trihydroxy silane, and the like.
In addition to the tri-functional compound, various amounts of di-functional and/ or mono-functional organosilicon monomers are included to modify the mechanical and electrical properties of the resulting cross-linked polymer.
The underlying relatively thin dilm comprising an ester of the silicon material which is integrally and chemically bonded to the silicon surface may be formed by the method described and claimed in co-pending application, Serial No. 749,624, supra.
The subassembly of vFIGURE 4 is immersed in an etch solution containing hydrolluoric acid as a principal element for a length of time sufficient to remove foreign matter, contaminants and work damage from the surface of the crystal body. The etch solution contains, for example, two parts by volume of hydrotiuoric acid (about 40% concentration in water) and one part of nitric acid (about concentration in water). The subassembly is then removed from the etch and immersed in a quench solution comprising primarily an organic liquid which has in its chemical structure a reactive hydroxyl group, broadly designated herein as ROH, speciiically, a monohydric or polyhydric aliphatic alcohol containing from l to 4 carbon atoms per molecule. A ethanol solution is particularly preferred. It is necessary to transfer the subassembly including the silicon body quickly from the etch solution to the quench solution to prevent undue exposure to the ambient. Briefly, hydroliuorsilicic acid (H2SiH6) formed at the silicon surface when the body is immersed in the quench solution will react with the ROH at the silicon surface to form ester groups which are molecularly bonded with the silicon as a film upon the silicon surface. The film is less than 1 micron and normally on the order of 100 to 1000 angstrom units in thickness. Quenching times ranging from about 5 seconds to 5 minutes may be suitably employed.
After formation of the relatively thin film comprising an ester of the underlying semiconductor material, i.e., silicon, the ester is reacted by reacting the ester groupings and the surface of the semiconductor material, in the thin lilm formed thereon, with a mixture comprising trifunctional silane monomers and monoor di-functional monomers, or both, in predetermined proportion; together With reactive and inert catalysts as described in detail hereinafter. The body is immersed in the liquid monomeric mixture in this embodiment and the mixture is agitated to insure complete wetting of the surface. Other methods of wetting can, of course, be utilized as long as the wetting action is complete.
The esteriiied film is reacted with a mixture of organosilane compounds, in which a trifunctional monomer predominates. The reactive group X of such monomers having the formular RSiXg can be any of a wide variety. The most reactive is the hydroxyl group but trihydroxy compounds have the disadvantage that they rapidly autopolymerize. Consequently it is preferred to use, as a starting material, a tri-alkoxy compound such as ethyl triethoxy silane and then hydrolyze the alkoxy compound to the hydroxy compound just prior to use. Such hydrolysis may be effected in a medium of water, amyl alcohol, toluene (which is a solvent for the hydrolysis products) and hydrogen chloride, which acts as a catalyst.
The reactive groups may also be groups such as mercapto, amino, or halide groups. 'Ihese groups are not quite so effective as the preferred alkoxy or hydroxy substituted silanes. iChloride groups, for example, form only relatively thin pasivating films, whereas alkoxy and hydroxy compounds can be used to build up polymers of any desired thickness.
The addition of difunctional organo-silanes (R2SiX2) where R and X have the same definition as previously, increases the plasticity of the resulting cross-linked polymer. D iphenyl dihydroxy silane is particularly useful in this respect. Where the triand di-functional monomers are kused alone, the ratio of trito di-functional compounds in the reaction mixture will be about to 50% cli-functional compound, and the balance tri-functional.
The addition of mono-functional organo-silanes (R3SiX)` serves to provide chain-terminating groups on the cross-linked polymer. When used in combination with the tri-functional compound alone, the monofunctional compound may be present in amounts of l to 10% by weight.
The mono-functional compounds may be added per se, as in the case of triphenyl silanol, or they may be added in a form which yield mono-functional groups in the reaction medium. The addition of hexamethyl siloxane which dissoriates into triniethyl silanes is an example of the latter.
When all three types of silane monomers are ernployed, the preferred amounts of each in the reaction mixture will be as follows:
Percent by Weight Mono-functional 1 5 Di-functional 5-45 Tri-functional Balance An illustrative quench solution comprises an alcohol solution which can be broadly designated as ROH in which R is a hydrocarbon radical, preferably containing one to four carbon atoms. Hydrofluorylicic acid (I-IZSiFG) forms at the silicon `surface when the silicon is immersed in the quench solution and will react with the ROI-I at the silicon surface to form an esterified lrn which is molecularly bonded with the silicon as a film upon the surface thereof. This iilm is synthesized by condensation polymerization of `the Si-O linkagesy 500 angstroms in thickness. Thereafter the lm 32 is produced by the generation by copolymerization of a mixture of polyfunctional, organo-silicon monomers which interact and react with the silicon semiconductor surface and the thin film formed thereon by the above-described previous treatment to yield a space polymer which i-s integral with the previously treated and real surface of the semi-conductor body 10. The monomeric organo-silicon materials utilized in accordance with this invention are more fully described in the co-pending U.S. patent application Serial No. 749,620 entitled Method 'and Means for Forming Passivation Films on Semiconductor Bodies, filed July 21, 1958, and assigned to the assignee of the present invention, and now Patent No. 2,913,358. Generally, the previously treated semiconductor material forms a relatively thin (less than 1 micron in thickness) film comprising an ester of -silicon which has been integrally and chemically bonded to the surface thereof, and it is upon this thin film that the thickened polysiloxane film 32 is deposited. Thus, the completed device as shown in FIGURE 4 is hermetically sealed from the ambient by means of lm 32 and the resulting device is thoroughly miniaturized, its overall `size being not substantially greater than that of the active crystal element itself.
Referring now to FIGURE 5, there is shown the first alternative embodiment of a semiconductor device constructed in accordance with the present invention. In FIGURE 5, two fine wire conductor leads 35 and 36 are directly bonded to opposite faces of semiconductor crystal I0. A method by which Wires 35 and 36 Amay be bonded is described in an article entitled Electrical Contact With Thermo-Compression Bonds by H. Christensen, at page of the April 1958 issue of Bell Laboratories Record. After the leads 35 and 36 have been bonded to the semiconductor crystal 10, a polysiloxane coating 37 is deposited about the semiconductor crystal and part of the wires 35 and 36 to produce an integral unit as shown in FIGURE 5. The FIGURE 5 device therefore represents the ultimate in miniaturization. Therein, no additional elements other than the active crystal and the connecting leads are included; the polysiloxane ilm serving to protect and hermetically seal the complete unit from the ambient.
In FIGURE 6 a second alternative embodiment of a device similar to that in FIGURE 4 is shown. In the embodiment of FIGURE 6 the semiconductor crystal 10 is sandwiched between two thin copper tabs 40` and 41. It may be desirable to include a gold coating over the copper tabs 4i) and 41 to insure a complete mechanical and electrical bond to the crystal, in much the same manner described with reference to the FIGURE 4 embodiment, but for purposes of simplicity such is not here shown. About the periphery `of the crystal l@` which is not in contact with the tabs 40 and 41 there is disposed a polysiloxane ilm indicated at 42. In the FIGURE 6 embodiment as well as those previously designated it may be assu-med that the semiconductor crystal is cylindrical in shape although this is not necessary. The film 42 is sealed to the opposite inner surface of the metal tabs 40 and 41 therein completing the hermetic sealing of the device. While copper has a thermal coeflicient of expansion which is considerably greater than that of molybdenum or Kovar, it has been found that if the tabs 40 and 41 are made thin enough that the difference in the coefficient of expansion between that of the vsemiconductor materials and the other metal tabs will not cause any serious problems.
Referring now to FIGURE 7, a transistor 50 including a collector region 51, a base region 52, and an emitter region 53 is shown to be packaged between two intermediate tabs 54 and 55, with a polysiloxane iilm 56 surrounding both the tabs and the transistor 50. Direct contact to the tabs 54 and 55 may be made by means of leads 60 and 61 while contact to the base region 52 of the transistor is shown to be made by two separate thin wire leads 62 and 63 which may be bonded to the base region 52 in a manner similar to that described with reference to wires or leads 35 and 36 shown in FIGURE 5 embodiment.
In FIGURE 9 still another embodiment in accordance with the present invention is shown. Two stacked diodes 65 and 66 are shown to be advantageously arranged within a package similar to that shown in FIGURE 8. The polysiloxane film 70 will, of course, surround the three metal tabs 71, 72, and 73 as well as the outer peripheries of the two diodes 65 and 66.
While the principles of the invention have been set forth hereinabove there will be obvious to those skilled in the a-rt many modifications in structure, arrangement, proportions, the elements and components of the invention and otherwise which are particularly adapted for specific environments and operating requirements without departing from those principles.
The appended claims are therefore intended to cover and embrace any such modifications within the limits only of the true spirit and scope of the invention.
W-hat is claimed as new is:
1. A semiconductor crystal wafer havin-g substantially parallel planar upper and lower surfaces; a first metal acazveo tab in low resistance Contact to the entirety of said upper planar surface; a second metal tab in llow resistance contact with the entirety of said lower planar surface; a first elongate electrical lead having a portion thereof ohmically bonded to said first metal tab; a second elongate electrical lead having a portion -thereof ohmically bonded to said second metal tab; and a polysiloxane film completely surrounding said crystal wafer, said metal tabs, and the portions of sai-d electrical leads bonded to said metal tabs to hermetically seal said crystal wafer from the ambient.
2. A semiconductor crystal wafer having substantially parallel planar upper and lower surfaces of opposite conductivity types; a first metal tab in low resistance contact to the entirety of said upper planar surface; a second metal tab in low resistance contact with the entirety of said lower planar surface; a first elongate electrical lead having a portion thereof ohmically bonded to said first metal tab; a second elongate electrical lead having a portion thereof ohmieally bonded to said second metal tab; and a polysiloxane` film completely surrounding said crystal wafer, said metal tabs, and the portions of said electrical leads bonded to said metal tabs to hermetically seal said crystal wafer from the ambient.
3. A semiconductor transistor comprising, in combination: a semiconductor crystal wafer including upper and lower regions of one conductivity type separated by an intermediate region of the opposite conductivity type, said upper region defining a first planar contacting surface, said lower region defining a second planar contacting surface; a first metal tab in low resistance contact -With the entirety of said first contacting surface; a second metal tab in low resistance contact with the entirety of said second contacting surface; a first elongate electrical lead having a portion thereof ohmically bonded to said first metal tab; a second elongate electrical lead having a portion .thereof ohmically bonded to said second metal tab; a third elongate electrical lead having a portion thereof bonded to said intermediate region of said crystal wafer; and a continuous encapsulating coating completely surrounding said crystal wafer, said metal tabs, and the bonded portions of said elongate electrical leads to hermetically seal `said crystal wafer from the ambient.
4. A semiconductor transistor comprising, in combination: a semiconductor crystal wafer including upper and lower regions of one conductivity type separated by an intermediate region of the opposite conductivity type, said upper region defining a first planar contact-ing surface, said lower region defining a second planar contacting surface; a first metal tab in low resistance contact with the entirety of said first contacting surface; a second metal tab lin low resistance Contact with the entirety of said second contacting surface; a first elongate electrical lead having a portion thereof ohmically bonded to said first metal tab; a second elongate electrical lead having a portion thereof ohmically bonded to said second metal tab; a third elongate electrical lead having a portion thereof bonded to said intermediate region of said crystal wafer; and a polysiloxane film completely surrounding said crystal wafer, said metal tabs, and the bonded portions of said elongate electrical leads to hermetically seal said crystal wafer from the ambient.
5. A semiconductor electrical translating device as defined by claim 4 wherein said polysiloxane til-m hasa thickness in excess of one micron, said film being molecularly bonded to said semiconductor wafer.
6. A transistor as defined in claim 4 wherein said polysiloxane film has a thickness in excess of one micron, said film being molecularly bonded to said crystal wafer.
References Cited in the file of this patent UNITED STATES PATENTS Harrington et al Nov. 17, 1959
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|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification


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WEST POINT -- First impressions at speaking engagements are extremely important for new coaches. New University of Mississippi football coach Hugh Freeze is trying to impress at 16 of those engagements this week as the Rebel Road Tour treks through Mississippi and into the states of Tennessee and Alabama.
WEST POINT -- Pat and Judy Clark, of Columbus, have been attending football games at the University of Mississippi almost all of their lives.
Andy Kirk didn't know what to expect from Kristyn Atkins and Anna Holley. On one hand he had a pitcher who was coming off surgery to repair a torn labrum in her shoulder. On the other hand the first-year Itawamba Community College softball coach had a high school standout who was recruited to be an infielder win the starting job as catcher.
PEARL -- Mississippi State University baseball coach John Cohen said his team needed to make it easier to manufacture runs. It can't get much easier than hitting the ball over the fence.
PEARL -- Nick Routt knew he wouldn't have any excuses if he didn't perform Tuesday night after a long layoff.
SCOOBA -- Kate Neely and the East Mississippi Community softball team are ready for a clean slate. The EMCC coach and the Lions will get just that Thursday when they will take on fifth-ranked Jones Junior College (36-7, 22-2 MACJC South Division) at 2 p.m. in the opening round of the MACJC state tournament. The eight-team, single-elimination tournament will run through Friday at Itawamba C.C. in Fulton.
Johnny Fisher has made a lot of decisions in his life.
STARKVILLE - While most Mississippi State University students have already started planning for next week's final examinations, the softball team is getting geared up for a busy of week of competition.
STARKVILLE -- This is the point in which freshman are supposed to figure out how to perform at this new level of competition.
STARKVILLE -- A Super Bulldog Weekend that began Thursday with the Mississippi State University baseball team winning in walk-off fashion ended Sunday afternoon with the MSU softball team doing the same thing.
OXFORD -- After taking the first two games of the weekend series, the No. 22 University of Mississippi baseball team missed a chance for a sweep Sunday, losing to the No. 15 University of Arkansas 11-3.
STARKVILLE -- While the concept of a difference-maker is thrown around loosely in big-time college football, two Mississippi State University receivers showed the potential Saturday to earn that billing. Sophomore athlete Jameon Lewis and freshman wide receiver Joe Morrow made a instant impact on MSU's passing game in the annual Maroon-White spring game.
STARKVILLE -- It's a well-known fact the Mississippi State baseball team has walked away from Southeastern Conference weekends thinking it could've won one or two more games. This wasn't one of those weekends.
STARKVILLE -- Mississippi State University men's tennis coach Per Nilsson has many reasons to be unhappy this weekend.
STARKVILLE -- For most of the spring season, Mississippi State University defensive tackle Quay Evans has been in the learning stage.
STARKVILLE -- Mississippi State University softball player Sam Lenahan talked earlier in the week about her desire to attend lots of Super Bulldog Weekend activities.
« previous Page 180 of 295 next »
1. Cooper sets tone for Heritage Academy HIGH SCHOOL SPORTS
2. Starkville baseball drops series opener to Tupelo HIGH SCHOOL SPORTS
3. Caledonia softball continues playoff push HIGH SCHOOL SPORTS
4. Murphy, others will miss West Point spring football game HIGH SCHOOL SPORTS
5. Walk-off home run lifts Simpson Academy past Starkville Academy HIGH SCHOOL SPORTS


text:
Beautiful rooms, great location
Amphawa canal (just south of the market) T: (081) 986 1762, (089) 919 5563
This homestay is set in a gorgeous teak wood home built in traditional Thai style and is perched along the southeast side of the canal just before it empties into the Mae Khlong river.
The location couldn't be better -- the market and town centre are a short stroll away but because it's so close to the river the homestay's canalside terrace sees little foot traffic compared to other nearby options. River views through wide windows in the top floor rooms are an added bonus. Rooms come in a few sizes, but all feature rich dark wood walls with tastefully placed framed Thai art and polished teak floorboards that are a joy to walk on with bare feet. Firm beds are on the floor and draped in mosquito nets, so you can sleep with the huge screen-free windows open at night -- don't be surprised if a firefly or two buzzes in. Rooms also have small TVs, free WiFi and air-con, but hot-water bathrooms are shared. The only drawback here is that sleeping in could be a challenge as walls are thin, though this is the case at most of Amphawa's accommodation. The young couple who run the homestay typically cater to weekending Thais, but all are welcome. It's 25% off room rates on weekdays.
By David Luekens
Last updated on 12th November, 2012.


text:
|Publication number
|Publication type
|Application number
|Publication date
|Dec 21, 1993
|Filing date
|Jun 28, 1991
|Priority date
|Sep 12, 1990
|Fee status
|Also published as
|Publication number
|Heinz Rilling, Armin Witzig
|Original Assignee
|Robert Bosch Gmbh
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (4), Referenced by (27), Classifications (16), Legal Events (6)
|External Links: USPTO, USPTO Assignment, Espacenet
The invention is based on a rotary position transducer for generating electrical rotational angle signals as a function of the swiveled position of a rotating device, in particular a throttle valve in a fuel supply system of an internal combustion engine.
A known rotary position transducer of this type (German Patent 21 11 262), a so-called acceleration signal transducer, serves to affect the control electronics in a fuel injection system, so that fast acceleration from low rpm is possible. In this acceleration signal transducer, two concentric contact tracks are disposed, insulated from one another, on a printed circuit board that is secured to the stationary carrier embodied as a metal base plate. The two contact tracks are provided with radial transverse ribs with teeth facing one another. A wiper secured to a wiper plate seated rotatably on a bush retained in the base plate cooperates with the two contact tracks. The wiper plate has a radially protruding support arm with two stop bolts disposed side by side spaced apart from one another in the direction of rotation. One stop bolt carries the wiper on the underside of the wiper plate; the wiper rests on the contact tracks with axial biasing. The wiper plate and thus the wiper is rotated by a coupler, which protrudes through the bush in the base plate and has a receptacle for inserting the end of the throttle valve shaft, which is held in it in a positively engaged manner. The coupler has a radially protruding coupler fork, which carries with it, in both directions of rotation, an indexing arm pivotably seated on the support arm of the wiper plate; this arm in turn protrudes between the stop bolts on the support arm. Upon rotation of the throttle valve, the coupler fork rotates the indexing arm, which via the stop bolts rotates the wiper plate with the wiper. The wiper slides over the contact tracks, alternatingly contacting one transverse web belonging to one or the other contact track, and as a result tripping control pulses in the control electronics.
Because of the fixed coupling of the coupler and the throttle valve shaft, on the one hand, and the coupler and the wiper plate, on the other hand, all the radial and axial oscillations of the throttle valve shaft are transmitted to the wiper position. This can cause locally high wear on the contact tracks, particularly in the geometrically defined end positions. This wears away the contact track and/or wiper severely and causes functional problems.
The rotary position transducer according to the invention has the advantage that because of the play-free spring coupling, all the axial and radial motions of the rotating device are compensated for. The spring coupling, which is highly elastic in the axial and radial directions, is embodied as torsionally rigid in the rotary direction, so that the transmission of rotational angle takes place with low hysteresis. Because the jittering of the rotary device transmitted to the wiper and contact track system is minimized, the service life of these components is maximized. At the same time, even axial and angular offsets of the axes of the rotary position transducer and rotary device can be compensated for by spring coupling.
The invention will be better understood and further objects and advantages thereof will become more apparent from the ensuing detailed description of preferred embodiments taken in conjunction with the drawings.
FIG. 1 is a longitudinal section through a rotary position transducer for a throttle valve in an internal combustion engine;
FIG. 2 is a view of the rotary position transducer in the direction of the arrow II in FIG. 1 with the housing cap removed;
FIG. 3 is an enlarged view of a wiper carrier in the rotary position transducer of FIGS. 1 and 2;
FIG. 4 is a view of the wiper carrier in the direction of the arrow IV in FIG. 3;
FIG. 5 is a section taken along the line V--V of FIG. 3;
FIG. 6 is a section taken along the line VI--VI of FIG. 3;
FIG. 7 is a longitudinal section through a rotary position transducer in a further exemplary embodiment, taken in the direction of the line VII--VII of FIG. 8;
FIG. 8 is a section taken along the line VIII--VIII of FIG. 7; and
FIG. 9 is a section taken along the line IX--IX of FIG. 7.
The rotary position transducer shown in FIGS. 1 and 2, for generating a rotational angle signal dependent on the pivoted position of a throttle valve 10, which because of its additional switching functions is also known as a throttle valve switch, has a housing 15, held on a mounting plate 14 enclosed on its face end by a covering cap 16. By means of two straps 32 embodied o the mounting plate 14, the housing 15 is secured to the intake tube 12 of an internal combustion engine, the inside cross section of which tube is controlled by the throttle valve 10. To this end, the throttle valve 10 is mounted in a manner fixed against relative rotation on a throttle valve shaft 11 that is rotatably supported in the intake tube 12 and protrudes as far as the inside of the recess 13 in the wall of the intake tube 12. The recess 13 is covered by the mounting plate 14 and housing 15; in the region of the recess 13, the mounting plate 14 has a through opening 17.
Two contact tracks 18, 19 are disposed concentrically and in an electrically insulated manner on the mounting plate 14. Cooperating with the contact tracks 18, 19 are two wipers 20, 21, which are secured to the underside of a rotatably retained coupler 23 and rest with axial pressure on the contact tracks 18, 19. The coupler 22 is seated in a manner fixed against relative rotation on a bearing journal 23, which slidingly rests in a bearing bush 24 retained on the mounting plate 14. On its face end remote from the coupler 22, detent protrusions 25 are provided, distributed over the circumference, on the plastic bearing journal 23; with them, the bearing journal 23 grips the face end of the bearing bush 24 from behind. In the position of the rotary position transducer mounted on the intake tube 12, the bearing journal 23 protrudes into the recess 13 in the wall of the intake tube 12, where it is connected to the throttle valve shaft 11 via a spring coupling. The spring coupling 26 is torsionally rigid, but axially and radially it is highly elastic. In the rotary position transducer of FIGS. 1 and 2, this spring coupling is embodied by an S-shaped leaf spring 27.
A view of the bearing journal 23 and S-shaped leaf spring 27 on a larger scale is provided in FIGS. 3-6. As seen in FIGS. 4, 5 and 6, the leaf spring 27 has a circular shank 271 (FIG. 4), extending transverse to the axis of the throttle valve shaft 11 and bearing journal 23; a rectangular shank 272 (FIG. 6) extending parallel to the shank 271; and a circular middle part (FIG. 5) extending between and parallel to the two shanks 271, 275. The shank 271 in the middle part 273, on the one hand, and the middle part 273 and the shank 272, on the other, are each joined together by a rectangular elbow. The leaf spring 27 is fixed by one shank 272 on the face end of the bearing journal 23 and with its other shank 271 engages the end of the throttle valve shaft 11 protruding into the recess 13. Specifically, to this end the shank 272 of the leaf spring 27 that rests on the face end of the bearing journal 23 is bent at right angles in its last portion and inserted into an axial slit 28 beginning at the face end of the bearing journal 23. Additionally, the shank 272 is secured axially without play to the bearing journal 23 by means of a rivet 29. The fixation of the leaf spring 27 to the bearing journal 23 is shown in a plan view in FIG. 6. The fixation of the leaf spring 27 toward the throttle valve shaft is effected by means of a receiving opening 30 (FIG. 4), in the shank 271 of the leaf spring 27 resting on the face end of the throttle valve shaft 11. When the rotary position transducer is mounted, this receiving opening 30 can be slipped onto a corresponding shaped segment 31 on the free face end of the throttle valve shaft 11, so that the throttle valve shaft 11 and the leaf spring 27 are joined together form-fittingly and without play in the rotational direction.
Upon installation, first the bearing journal 23 with the coupler 22 secured to it is inserted into the bearing bush 24 until the detent protrusions 25 have locked into place behind the rim of the bearing bush 24. After that, the leaf spring 27 with its bent end on the shank 272 is inserted into the slit 28 in the bearing journal 23 and riveted at the face end of the bearing journal 23. Next, the housing 15 is closed with the covering cap 16, and the mounting plate 14 with the housing 15 is brought to its position on the wall of the intake tube 12; the receiving opening 30 is slipped form-fittingly onto the shaped portion 31 of the end of the throttle valve shaft 11 protruding into the recess 13 in the wall of the intake tube 12. Next, the mounting plate 14 is secured to the tube wall by its strap 32, by means of threaded screws 33. By means of the leaf spring 27, the bearing journal 23 is no pressed constantly against the rim of the bearing bush 24, even if the throttle valve shaft 11 is executing axial and radial motions. Now that the position of the bearing journal 23 is fixed, the position of the coupler 22 retained on the bearing journal 23 is fixed as well, and the wipers 20, 21 secured to the coupler 22 rest on the contact tracks 18, 19 with a constant pressing force. Axial and radial motions of the throttle valve shaft 11 are thus kept away from the wipers 20, 21 and contact tracks 18, 19.
To maintain the spring characteristic of the leaf spring when there are wide tolerances or a long axial stroke of the throttle valve shaft, a through opening 34 is provided in the middle part of the leaf spring 27, and its inside diameter is greater than the maximum diameter of the shaped portion 31 on the throttle valve shaft 11. This through opening 34 for the shaped portion 31 can be seen in plan view in FIG. 5.
FIGS. 7-9 show a further exemplary embodiment of a rotary position transducer for a throttle valve, in various views. The rotary position transducer or throttle valve transducer has a two-part plastic housing 40, with a first housing shell 41 and a second housing shell 42, which rest on one another by their open sides and are joined together by two detent sleeves 43. The detent sleeves 43 are passed through corresponding bores in the two housing shells 41, 42 and rest, with an annular flange 44, on an annular shoulder 45 in the first housing shell 41 and are locked into place on an annular radial protrusion 39 in the second housing shell 42. The fastening of the rotary position transducer to the engine intake tube is don with threaded screws, which are passed through the detent sleeves 43.
A bearing journal 46 that protrudes into the interior of the housing shell 42 is retained on the bottom of the second housing shell 42. Via a ball bearing 47 braced in the axial direction, a support cylinder 48 rests on the bearing journal 46, and a wiper plate 49 is secured without play to the support cylinder 48. In a known manner, the ball bearing 47 has an inner bearing race 471 seated on the bearing journal 46, an outer bearing race 472 firmly joined to the support cylinder 48, and balls 473 that roll along the bearing races 471, 472. A support disk 50 is retained without play on a hollow riveted connection on the free end of the bearing journal 46; the inner bearing race 471 is pressed against the support disk 50 by a cup spring 51, which in turn is supported between the other face end of the inner bearing race 471 and an annular protrusion 52 on the bearing journal 46. Secured to the wiper plate 49 is a wiper spring 53 having two wiper bridges 54, 55 (shown in dashed lines in FIG. 8), which rest with axial biasing force on two contact tracks 57, 58 disposed concentrically with the bearing journal 46 on a printed wiring board 56. The two contact tracks 57, 58 are diametrically opposite one another and take the form of arcs of a circle.
A housing connection piece 59, the hollow interior of which opens a housing opening 60, is formed in the housing shell 41 coaxially with the bearing journal 46. An annular collar 61 protrudes radially from the inner wall of the housing connection piece 59 and serves as a slide bearing for an insertion sleeve 62. For installation of the insertion sleeve 62, this sleeve is provided with a chamfer 63 on one face end and with slits 64 distributed over its circumference beginning at the face end. By means of the chamfer 63 and the slits 64 it is possible to pass the insertion sleeve 62 through the clear opening uncovered by the annular collar 61, until the annular collar locks into place in an outer annular groove 65 provided in the insertion sleeve 62. The insertion sleeve 62 serves to receive the end of a throttle valve shaft without play.
The insertion sleeve 62 and the wiper plate 49 are joined together by a spring coupling--which as in the exemplary embodiment of FIGS. 1 to 6--is torsionally rigid in the rotational direction and highly elastic axially and radially. The spring coupling is embodied here by a double-hoop cross coupling 67, which has two intersecting double hoops 68 (FIG. 7) and 69 (FIG. 9) extending transversely to the axes of the bearing journal 46 and insertion sleeve 62. Each approximately S-shaped double hoop 68, 69 is connected at one end to the insertion sleeve 62 and at the other to the wiper plate 49. The wiper plate 49, double hoop cross coupling 67 and insertion sleeve 62 are here embodied as an integral plastic injection-molded part. By means of the double hoop cross coupling 67, on the one hand any radial and axial play of the throttle valve shaft is kept away from the wiper plate 49, and on the other hand even a tolerance-dictated offset of the axes of the bearing journal 46 and insertion sleeve 62 is compensated for.
The foregoing relates to a preferred exemplary embodiment of the invention, it being understood that other variants and embodiments thereof are possible within the spirit and scope of the invention, the latter being defined by the appended claims.
|Cited Patent
|Filing date
|Publication date
|Mar 6, 1961
|May 1, 1962
|Collins Radio Co
|Coupling mechanism
|Oct 27, 1966
|Jan 9, 1968
|Mc Graw Edison Co
|Rotary selector switch with improved rotary brush contact assembly
|Jun 5, 1986
|Aug 25, 1987
|Nippondenso Co., Ltd.
|Throttle valve position-detecting device for a vehicle engine
|Mar 9, 1971
|Sep 28, 1972
|Bosch Gmbh Robert
|Beschleunigungssignalgeber fuer eine Kraftstoffeinspritzanlage
|Citing Patent
|Filing date
|Publication date
|Jul 12, 1996
|Sep 30, 1997
|Robert Bosch Gmbh
|Throttle valve adjusting unit
|Jun 18, 1997
|Oct 20, 1998
|Illinois Tool Works Inc.
|Accelerator module
|Aug 21, 1997
|May 18, 1999
|Cts Corporation
|Bearing free spring free throttle position sensor
|Feb 16, 1996
|Jul 6, 1999
|Illinois Tool Works Inc.
|Electrical switch and variable resistance module for vehicle brake pedal or accelerator and method of operation
|Mar 16, 1999
|Feb 6, 2001
|Illinois Tool Works Inc.
|Accelerator module for electric vehicle
|Sep 23, 1999
|May 8, 2001
|Mannesmann Vdo Ag
|Device for contact-connecting a circuit board
|May 17, 1999
|Jun 5, 2001
|Luk Automobiltechnik Gmbh & Co. Kg
|Radial piston pump
|Jan 21, 2000
|Apr 23, 2002
|Delphi Technologies, Inc.
|Rotary position transducer and method
|Dec 21, 2001
|Aug 5, 2003
|Alps Electric Co., Ltd.
|Rotary encoder having code member rotating along accurate circle as shaft rotates
|Dec 30, 2002
|Jan 18, 2005
|Keihin Corporation
|Throttle opening degree sensor
|Sep 25, 2002
|Mar 29, 2005
|Pieburg Gmbh
|Throttle valve adjustment unit
|Aug 13, 2004
|Oct 3, 2006
|Cts Corporation
|Actuator with integral position sensor
|Oct 24, 2002
|Mar 20, 2007
|Ford Global Technologies, Llc
|Rotary position sensing assembly for internal combustion engine
|May 28, 2013
|Cts Corporation
|Rotary position sensor
|Aug 23, 2011
|Nov 5, 2013
|Manitowoc Crane Group France Sas
|Rotary position transducer assembly which compensates for radial play
|May 20, 2013
|Apr 8, 2014
|Cts Corporation
|Rotary position sensor
|Feb 12, 2014
|Mar 29, 2016
|Cts Corporation
|Rotary position sensor
|Sep 25, 2002
|May 22, 2003
|Thomas Schroder
|Throttle valve adjustment unit
|Dec 30, 2002
|Jul 10, 2003
|Takeo Kure
|Throttle opening degree sensor
|Oct 24, 2002
|Apr 29, 2004
|Mayol Dale Mathew
|Rotary position sensing assembly for internal combustion engine
|Aug 13, 2004
|Nov 10, 2005
|Donald Robertson Lawrence
|Actuator with integral position sensor
|Sep 13, 2006
|Jan 11, 2007
|Cts Corporation
|Rotary actuator with non-contacting position sensor
|Aug 23, 2011
|May 17, 2012
|Schroeder Dierk
|Rotary position transducer assembly which compensates for radial play
|May 26, 2009
|Nov 22, 2011
|Hitachi, Ltd.
|Air flow rate control apparatus
|Jul 3, 1997
|Jan 14, 1998
|Hella KG Hueck & Co.
|Variable resistance rotation sensor
|Sep 18, 1999
|Mar 29, 2000
|Mannesmann VDO Aktiengesellschaft
|Device to realize a contact with a contact plate
|Aug 24, 2000
|Mar 7, 2001
|Honda Giken Kogyo Kabushiki Kaisha
|Intake system of engine
|U.S. Classification
|73/114.15, 338/98
|International Classification
|Cooperative Classification
|European Classification
|Jun 28, 1991
Owner name: ROBERT BOSCH GMBH
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:RILLING, HEINZ;WITZIG, ARMIN;REEL/FRAME:005769/0913
Effective date: 19910617
|May 27, 1997
|Fee payment
Year of fee payment: 4
|May 31, 2001
|Fee payment
Year of fee payment: 8
|Jul 6, 2005
|Maintenance fee reminder mailed
|Dec 21, 2005
|Lapse for failure to pay maintenance fees
|Feb 14, 2006
|Expired due to failure to pay maintenance fee
Effective date: 20051221


text:
I was just having lunch with Ficus and the hunt sort of came to us this time. We were having lunch and Reena sat right by us. She over heard me mention how good the salmon was and decided to order it. I struck a conversation with her and realized she was there on vacation without her husband. Always a good sign. She flashed us and showed us she wasnt wearing panties and was ready for some strange. We went up to her hotel room and she let me bang her hard. Once we were done she took charge once again and kicked us right out. I was roaming the hallways of the hotel butt naked and with my budy filming me. Its alright though. I would rather that than have to figure out an escape route once I get what I want from these MILFs.
"Milfs Of Our Lives"
"Rekindled Sex"
"Ultra Hot"
"Morning Snack"
"Private Play"
"Panties Down"
"Love To Love Ya"
"Easy Rider"
"Gash Flash"
"Plant The Seed"


text:
Upcoming Events
9th Annual Community Service Learning (CSL) Conference
April 2, 2016
UT Health Science Center
San Antonio, TX
University-wide Alumni Reception - Corpus Christi
April 5, 2016
Harrison's Landing
Corpus Christi, TX
Questions or rsvp: email@example.com
University-wide Alumni Reception - Houston
April 14, 2016
Houston, TX
Questions or rsvp: firstname.lastname@example.com
Save the Date: Reunion Weekend 2016
October 14-15, 2016
San Antonio, TX
Center for Medical Humanities & Ethics Events
Events are free and open to alumni.
Alumni News
Dr. Larry Driver '80
Dr. Larry Driver, '80 received the 2015 Distinguished Alumni Award during the School of Medicine Reunion Weekend..
Founding Faculty
Watch video interviews of Dr. Colette Kohler and other members of UTHSCSA Founding Faculty.
View the digital collection of Medical School Yearbooks.
Alumni Association
Contact Information
Chantel Maldonado
Senior Alumni Relations Officer
210-567-6803 | email@example.com
Lisa Ganocy
Development Coordinator
210-567-3743 | email@example.com


text:
Hailey Logan
Embellished Fit & Flare Dress (Juniors) (Online Only)
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A sweetheart bodice wrapped in panels of glittering sequins meets a flouncy chiffon skirt at the gently pleated waist of a party-ready dress.
- Approx. length from center front to hem: 27 1/2".
- Measurements taken from size 7 and may vary slightly by size.
- Back-zip closure.
- Fully lined, with rubber gripper material and padding in bodice.
- Polyester; spot clean.
- By Hailey Logan; imported.
Use bust measurement to determine size.
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text:
UCLA forward Tyler Honeycutt, the Bruins' leading rebounder and second-leading scorer, had an X-ray on his right elbow Tuesday after acknowledging that the elbow has been ailing him for more than six weeks.
The results of the X-ray weren't immediately available, but Honeycutt said he's been feeling sharp pain in his shooting elbow ever since he fell on it Dec. 2 in UCLA's loss at Kansas.
"I've been playing through it," Honeycutt said. "It's been really weak as far as squeezing stuff and pushing stuff."
Honeycutt said he has been taking pain killers to help deal with it, but the injury has clearly affected his play.
In the six games up to and including the Kansas game, when Honeycutt scored 33 points, he averaged 17.7 points on 54.8 percent shooting. In the 10 games since, he's averaging 10.9 points on 36.7 percent shooting.
In UCLA's last three games, he's averaged 8.3 points on 34.6 percent shooting. His rebounding has remained consistent, however. He's averaging 7.9 for the season -- 8.2 per game before the injury and 7.7 after.
"Some weeks it will really hurt a lot," he said. "Lately it's been like, when I go out to shoot, if it's not warmed up, I can barely get the ball to the rim."
Honeycutt, who also missed a game Dec. 23 because of a sprained shoulder, said he wanted to get his elbow X-rayed because the pain hasn't subsided.
"It's just a nagging injury so I want to make sure everything is good with it," he said. "It's been kind of an issue the whole time."
Peter Yoon covers the UCLA Bruins for ESPNLosAngeles.com.


text:
The following is a list of upcoming area events as provided to The Brazil Times:
Clean Up!
Brazil Main Street, Ind., will conduct a Community Clean Up Day Saturday, June 2, from 8-11 a.m.
The "clean teams" are asked to meet at Brazil City Hall at 8 a.m.
For more information, call 446-0050 or e-mail email@example.com.
Street Dedication
A street sign dedication will take place Saturday, June 2, at 9 a.m., in memory of Kenneth McClelland. The dedication will be at Forest Park; the first street south of Pinckley Street on the east side will be renamed Ken McClelland Street. The public is invited to attend.
Memorial Service
The 85th Calcutta Cemetery Memorial Service for veterans and those who have passed away this year will be Sunday, June 3, at 2 p.m., at the cemetery, located on North County Road 200 East (Harmony Road), just north of the railroad tracks.
McKinley Hill Church of Christ Pastor Rick Thomas will give the message. In addition, music will be provided by members of the church.
Meeting Set
The Clay County Historical Society will meet June 4, at 7 p.m., in the lower level of the museum.
The guest speaker will be Terre Haute resident Joy Sacapulos.
Special Meeting
The Clay County Health Department is sponsoring an informational meeting for all area businesses June 5, from 7-8:30 p.m., regarding Indiana becoming a smoke-free state and how to transition into a smoke-free environment. The meeting will take place at the YMCA of Clay County, located on Kruzan Street, Brazil. The law takes affect July 1.
Pool Party
According to Meridian Elementary School Principal Karen Phillips, students reached their goal on ISTEP+ this year.
Because of this, a pool party for students in grades kindergarten through fifth-grade has been scheduled for Wednesday, June 6, from 6-8 p.m., at the Forest Park Pool.
Students under 10 must be accompanied by an adult to the party.
All students must be signed out by a parent or guardian by 8 p.m.
Forest Park Pool rules will apply during the party.
Blood Drives
The Indiana Blood Center will host three blood drives in June in Clay County.
The following are the locations of the blood drives, including date and times:
* June 7 -- Clay County Sheriff's Department, 1:30-6:30 p.m.,
* June 11 -- Holly Hill, 10 a.m.-noon, and
* June 16 -- Annunciation Church, 9 a.m.-noon.
Open House
According to officials with the Southern Indiana Vintage Camper Rally, registrations for the upcoming event are no longer being accepted as the event -- scheduled for June 9-10 -- is sold out.
However, all are invited to the Show and Shine Open House Saturday, June 9, from 1-4 p.m., at Fowler Park and Pioneer Village, located south of Terre Haute on United States 41 on East Oregon Church Road.
All visitors will be given the opportunity to walk through 55 vintage trailers.
Quilt Show
The Clay City Calico Quilters will sponsor the 25th quilt show at the Clay City Lion's Club Pottery Festival June 9-10.
Show hours are Saturday, June 9, from 9 a.m.-6 p.m., and Sunday, June 10, from 11 a.m.-5 p.m.
The show will be open before other festival activities Friday, June 8, from 6-8:30 p.m.
Admission at all viewings is $2.
The quilt show will be set up in the R.E.I.N. Center Community Library, 700 Main St., Clay City.
Food Giveaway
The Church of Our Lord Jesus, 708 E. Hendrix St., Brazil, will conduct a food giveaway Saturday, June 9, from 1-3 p.m.
For more information, call 446-3110.
Truck Pull
The annual Saline City Truck Pull will take place Saturday, June 9.
Pulling will begin at 5:30 p.m. Weigh-ins will run from 2-5 p.m.
Cost is $8 for adults. Children 10-under will be admitted free.
There are limited bleacher seats.
Those interested are encouraged to bring lawn chairs.
Cost to enter a truck is $20 per hook.
For more information, call Greg Nicoson at 812-249-5903.
Bloomfield Festival!
The 2012 Bloomfield Art Festival will take place Saturday, June 9, in the Bloomfield Town Park.
The festival will be open from 9 a.m.-5 p.m.
For further information, call 812-384-6505 or e-mail firstname.lastname@example.com.