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32nd out of 118 books — 38 voters
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Chimpanzee Cultures: With a Foreword by Jane Goodall
Bringing together studies of behavioral variation within and among chimpanzees and bonobos - the sibling species of the genus Pan - this book provides the basis for answering such questions. In Chimpanzee Cultures, the world's leading authorities on chimpanzees and bonobos compare the animals' behaviors from one study site to the next, and in both captive and wild groups. ...more
Paperback, 448 pages
Published September 1st 1996 by Harvard University Press
(first published October 31st 1994)
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Richard W. Wrangham, Ruth Moore Professor of Biological Anthropology, Harvard College Professor, Head Tutor in 2008-2009, Director of Graduate Studies in 2009-2010More about Richard W. Wrangham...
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Creamy, dense, and brought to life with caramelized onions and garlic.
Recipe: http://www.thrivelife.com/recipes/recipe/view/id/1517
Product highlights and how to's that show you how easy THRIVE is.
See how some of our consultants are thriving in their kitchens at home.
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subset: commoncrawl


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Located in Antigua Guatemala, Casa Capuchinas is minutes from Las Capuchinas Convent and Choco Museum. This family-friendly bed & breakfast is within close proximity of Nim Po't Traditional Textiles Center and Santa Catalina Arch.
Treat yourself to a stay in one of the 8 individually decorated guestrooms, featuring fireplaces. Complimentary wireless Internet access keeps you connected, and cable programming is available for your entertainment. Conveniences include desks and separate sitting areas, and housekeeping is provided daily.
Rec, Spa, Premium Amenities
Relax and unwind with massages and facials. Additional features at this Colonial bed & breakfast include complimentary wireless Internet access, concierge services, and babysitting/childcare (surcharge). Getting to nearby attractions is a breeze with the area shuttle (surcharge).
Take advantage of the bed & breakfast's room service (during limited hours).
Business, Other Amenities
Featured amenities include a business center, a 24-hour front desk, and luggage storage. A roundtrip airport shuttle is provided for a surcharge (available on request), and free self parking is available onsite.


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It's Never a Good Time to Get Pregnant
Just returned from Vegas, and what happened there will stay there*, but the conversation I had with my friend Emily before we left, will not.
Emily was pretty pumped for this weekend. It was her little sister's bachelorette party, and it had been a while since she'd been to Vegas. After we were done discussing our plans (trapeze show at Circus Circus, the $3 sirloin at Binion's Horseshoe – you know, the classy stuff), talk turned to babies since two of them were making noise in the background on her end.
I asked if she was having a third and she said she thought so. (I guess I'd want to have another one too if I was popping out super-model babies like this.)
But she quickly followed that up with an exasperated sigh and the following proclamation:
"There's just never a good time to get pregnant!"
Vegas this weekend, a Ladies-Only vaca in June, her sister's wedding in the Spring…the occasions that called for – nay, demanded – a non-pregnant Emily seemed to stretch endlessly through 2012. There certainly wasn't a 9-month pocket hiding where she'd etched into her calendar Prop swollen ankles on couch, have hysterical hormonal breakdown over Beverly getting kicked off Top Chef, designate-drive husband and friends to and from bars.
I'm not saying this is what all pregnant women do, or that they can't have fun. Some women – my mom is one of them – have amazing pregnancies and say they never felt better in their lives than when they were pregnant. There's even an urban legend that some remarkable ladies can enjoy the company of others while sober.
But imagine some of your upcoming events sans alcohol, caffeine and/or a svelt figure:
- That shower curtain ring sales conference for work, where you'll need no less than an army tank of Starbucks' Sumatra blend to survive
- The 10-year high school reunion where you must either not be pregnant at all, or be so obviously pregnant that no one mistakes you for just getting super fat since graduation. Like that cow Teresa Jones.**
- Being nine months pregnant in Texas in August. Nuff said.
- The bachelorette party that requires enough vodka (exact quantity unknown) to make it okay that you're wearing stuff like this. Yeeeeeeeeeeeeeah, that's me I guess. ↓
That ain't all
You can't swing a dead cat without hitting some soiree for which it's going to suck to be pregnant. But if you do bite the bullet and find a good slot, the distressing news is that it's not over in nine months! Unless you have unlimited babysitter funds or grandparents nearby, you don't just need a clear three-quarters of a year. You need a clear rest-of-your-life.
Let's not panic yet
For those of you holding off on the baby bandwagon until later, the situation may rectify itself. The Singles herd is thinning. Unless there's a massive swell of Marriage #2 related debauchery on the horizon, the number of weddings and raucous bachelorette parties will eventually die out. Your friends will stop switching apartments every year and a half and there'll be fewer and fewer housewarming (or their rowdier cousin, housecooling) parties. Nearly everyone you know will start having babies and stop dragging you out to the bars. Hangovers will become increasingly unbearable with age*** and we'll have to – gasp! – settle down.
And maybe that's okay. Who says you always have to stay till the end of the party, till last call, till the lights come on? We all know that's the most frightening moment anyways. Perhaps it's better to go out on top ala Seinfeld and not hang on till the bitter end. Or perhaps these are just the ramblings of a girl suffering from post-Vegas exhaustion.
What do you guys think – is there EVER a good time to get pregnant?
*Okay, this won't stay in Vegas: I woke up this morning with this super-classy Girls Night Out + martini glass tattoo. It's in that exact location where I can't reach it in the shower so I haven't been able to figure out if this is fake or not. This looks fake, right?!
**All names have been changed and any resemblance real persons, living or dead, is purely coincidental. No cows were emotionally scarred in the typing of this post.
***For any of you who may also have gone to Vegas this weekend, here's 13 natural hangover cures.
Want to read more? Visit my blog at: www.maybebabymaybenot.com


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Key things you need to know aboutDr. Khan:
Dr. Khan's Experience
Research training, expertise and qualifications
Dr. Khan's Specialties
Procedures Dr. Khan Performs
- Ablation for Treatment of Cardiac Arrhythmias
- Cardiac Catheterization (incl. Coronary Angiography)
- See all 14 procedures
Conditions Dr. Khan Treats
- Aneurysm
- Angina and Acute Coronary Syndrome
- See all 45 conditions
More About Dr. Khan's Background
Hospital Quality
The right hospital is as important as the right doctor
- Iowa Methodist Medical Center
- 1200 Pleasant St
- Des Moines, IA 50309
- Greater Regional Medical Center
- 1700 W Townline St
- Creston, IA 50801
9 Facts About Hospital Quality
Patients' risk of dying during a hospital stay for heart bypass surgery could be 87.4% lower, on average, at a hospital rated 5 stars compared to a hospital rated 1 star for that procedure. Choosing the right hospital is critical to your health. View Slideshow
Patient Satisfaction
Patients' feedback on their experience with Dr. Khan
Likelihood of recommending Dr. Khan to family and friends is 5 out of 5 5 1 2
See More Survey Results
8 Facts About Patient Satisfaction Surveys
Patient satisfaction surveys provide a standardized way of reporting about healthcare experiences. But there can be more than meets the eye when reviewing scores. Here's what you should know
Appointments & Offices
Check insurance plans, locations and make an appointment
Accepting new patients?
- Yes
- Heart and Vascular Cardiology
- Heart and Vascular Cardiology
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- Des Moines, IA 50309
- (515) 241-5735
- Directions
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- Iowa Clinic CAR SVS
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- West Des Moines, IA 50266
- (515) 875-9090
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7 Tips to Prepare for Your Appointment
The key to a successful appointment is communication. To get the most out of your visit, prepare ahead of time so you can lead the conversation with your doctor. These 7 tips will get you ready
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Mayor Paul R. Soglin
Protecting the Board of Estimates
In the next 60 days, on May 17, 2016, the Madison Common Council plans to enact drastic changes in the structure of city government. The so-called "City Government Reform Initiative" was announced on March 16, 2016. It removes from the mayor the authority to make aldermanic committee appointments.
More importantly, the initiative strips the mayor of the authority to appoint the Board of Estimates and to serve in a tie-breaking role.
Part of the rationalization for the changes is the balance of powers between the legislative and executive branches. Of course, the structure they envision takes place when there are two legislative branches to provide a check on one another. In Madison, we have one legislative house, the city council, so the only formal balance is the executive branch, the mayor.
BlogView all Blog Postings
A Sure Sign of SpringMay 3, 2016 11:43 AM | Madison motorists should be on the lookout for turkeys! I spotted this young female on East Washington Avenue this week. As you can see, she appears to be a little confused with her reflection. Enjoy the Spring weather, but watch out for wildlife!
NewsView all News Releases
Madison Partners to Provide New Free Summer Meal SitesPosted 4/29/2016 | An innovative partnership has formed to address food insecurity for children in Madison this summer. REAP Food Group, Madison Metropolitan School District, the City of Madison, Madison Parks, Public Health Madison & Dane County and Midvale Baptist Church are coming together to improve and...


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Star Wars Action Figures / Re: Master Phruby's Customs Thread - Update Cobra Commander (1/6/06)« on: January 6, 2006, 11:01 AM »
I don't know if posting this is against the rules or not but I'll give it a try. This is my first GI Joe custom. This is of course, Cobra Commander in this battle armor. I gave him a new color scheme that reminds me of Jango Fett. I guess from a certain point of view its star wars related. Kind of.


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Displaying unusual or unexpected props in the classroom can grab students' attention and engage them in a lesson. Use multicultural dolls to enhance a social studies lesson, playing cards or dice to teach a math lesson, or fortune cookies to introduce a writing assignment, for example.
For an example of a lesson using engaging props, check out Fortune Cookies Motivate Writing.
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Dear visitors, we are proudly present the newest C&C community site: C&C Society.
C&C Society is created as a community site that will focus on C&C Universums, And a bit Computer Graphics & Basic Game Design.
You are not logged in, your comment will be anonymous unless you join the community. Or sign in with your social account:
Blue Model version


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iHerb Customer Reviews
Savings of: $0.00 (0% off)
Posted by marjaana on Oct 01, 2014
It was a small sample so I don't have much to say. It didn't impress me, I'm not going to buy the product.
♥ ♥ ♥ ♥ ♥ Best Skin Cream EVER !!
Posted by Sickness-ELIMINATOR on Dec 21, 2013
This is meant for "Made for Babies + Kids" but works also perfectly on my Exxtra-sensitive skin. Me likes!! Soothes so well. 99% of creams burn my skin. ♥ ♥ ♥ ♥ ♥ You can find other products I use on my Page! I use only products that have Scientifically Proven benefits (or taste good).
Nice and soothing
Posted by ekstravirgin on Oct 11, 2013
This was given to a guest at our house who brought their baby, and I was told it was really good - smooth, nice to spread, and it did the trick
This was your average basic cream.
Posted by acumen on Aug 19, 2013
Can't say much more of it, it was ok but nothing spectacular. PS. Be sure to check my profile page for +180 reviews on iHerb products.
Good eczema cream
Posted by eathealthy on Jul 02, 2013
This is a wonderful eczema cream for all ages. Using on my sons eczema patch after bath time with great success. Also, compared with prescribed eczema creams I don't have to worry about him applying the cream on his own, or about it thinning his skin or decreasing immunity.It has good ingredients for sensitive skin such as jojoba oil, calendula and oat extract. The probiotics and neem help to soothe itchy eczema patches and keep them at bay. Great sample! If you like my review check out my page by clicking eathealthy in blue above to see reviews of all the products I have purchased from iHerb!
Posted by bugajuk on Jun 10, 2013
good lotion, softens skin good.
Posted by poleonella on May 25, 2013
good cream
Was this review helpful to you?
4 people found the following review helpful
Posted by ugilee on May 05, 2013
Good cream
Helps my baby's eczema!
Posted by shoppingmama on Apr 25, 2013
Beats applying steroid creams which thins their skin. This is an all natural solution which contains oats, calendula and jojoba oil. Soothes rash and itchiness. I've grown skeptical after visiting many doctors and tried so many lotions, potions and whatever they prescribed. Great that they give this out as a sample for you to try! Give it a shot! >>>>>>> Click on my iHerb review page link above to read the rest of my product reviews. I use each and everyone of the iHerb products I bought and take time to review it properly. You can read more about other baby, bath, beauty and health items that I bought from iHerb. >>>>>>> Please click "Yes" if you found my review helpful. Thanks a lot!
Gentle and mild.
Posted by 5276494079979824353 on Mar 15, 2013
Gentle, smell good, feels good on the skin. I would certainly use this one my baby.


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Once again, a Phillies fan has made the news. This time, there was no underage drinking or vomit involved and nobody had to be tasered. Instead, this Phillies fan didn't see the chain attached from a seat to a nearby handrail, tripped and fell down the seats behind home plate. Scroll down to watch the video.
WATCH: (via Busted Coverage)


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- Score:
- rated 4.04 / 5 stars
- Views:
- 489,004 Views
- Share Links:
- Genre:
- Adventure - Point 'n Click
- halloween
- halloween2005
Credits & Info
- Uploaded
- Aug 18, 2005 | 5:47 PM EDT
- Frontpaged August 19, 2005
If you liked this, check these out!
Plenty more like this here!
Author Comments
Rated 4 / 5 stars
holy crap
scary i dont like scary stuff such as movies and now im scared from this... good work :D very addicting yet i want to leave... oohhh pizza is ready
Rated 4 / 5 stars
OMG this is such a good game! I literally jumped during one of the scenes
Rated 4 / 5 stars
I like what youve done. Its great. Its pretty neato how the eyes and stuff faintly appear when the light is barely on them, but when you shine it on them fully, they disappear, and stuff... creepy. Only some of the osunds seem strange... Like a cat coughing a hairball. But that just might be me. I loev this flash so far.
Rated 4 / 5 stars
A good game
A game that is actually complicated... good work. I liked it.
Rated 4.5 / 5 stars
Very, very spooky =P but very, very good. You're right, there aren't a lot of horror games on Newgrounds. Very nice detail, and it was very challenging.
Teh Spoiler: That TV Puzzle was impossible =P I couldn't get it. Also, that cat in the kitchen in the dream was cool, good job. I like how things stared at you but went away. This is one great horror game. Good job =D
Just so you know, all you have to is click 4 specific squares along the border of the TV in order to solve it. I actually didn't figure that out until after I did the walkthrough, I'll probably update it with the solution.


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We love visiting zoos, and since the Cedar Rapids metro area doesn't have an actual zoo, we placed this cache so you could come visit all sorts of animals in one place. This is a themed cache so please try to keep with the theme when swapping items. Of course all trackables are welcome.
We suggest cachers use the given parking coords for safety, and it's a fairly short walk to the cache. Parking along Hwy 13 is not advised. Squaw Creek Park hours are 4:00 AM - 10:30 PM. Enjoy the hunt!
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Current Time: 5/2/2016 12:58:45 PM Pacific Daylight Time (7:58 PM GMT)Last Updated: 2016-04-05T00:17:16Z on 4/4/2016 5:17:16 PM Pacific Daylight Time (12:17 AM GMT) Rendered From:UnknownCoordinates are in the WGS84 datum


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Supreme Court extends same-sex marriage nationwide
WASHINGTON (AP) — The Supreme Court declared Friday that same-sex couples have a right to marry anywhere in the United States. Gay and lesbian couples…
You really like him, but you're questioning whether he's serious about you. Here ares some signs that he's not.
It's super obvious when a man wants to wife you. Here's how you know.
Don't let Beyonce's vegan diet fool you. There's still plenty of women who love to eat and men love that!
It's one of America's greatest paradoxes that no matter how diverse we become, the discomfort people feel when talking about race is never appeased. In most parts of the country, you will see countless mixed-race couples and yet, the complicated nature of our country's sordid racial past means many people still have that initial knee-jerk reaction to […]
We have all been there before. You know, those awkward, scary stages when you realize you're falling for someone hard.
Dating your ex isn't always the smartest idea. There's always a reason you broke up in the first place.
There are endless conversations about black women and relationships, and this time it was brought up on Comedy Central's The Nightly Show with Larry Wilmore. He had…
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Spring wouldn't be spring without floral lingerie! Blooming with bright flowers and beautiful bouquets, the new season calls for new bras and we're falling for florals. Here's what we're coveting… Look and feel great in the Freya Strawberry Fields Plunge … Continue reading
Spring Forward With Bright FloralsAdd to favorites68
April 8, 2016


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To provide a clean environment for wildlife and community recreation within the Elkhart River and Goshen Dam Pond watershed. The Elkhart River Restoration Association, Inc. is a group of concerned citizens, landowners, organizations, businesses, and governments, that promote good stewardship to improve, preserve and … [Read More...]
In 2008, after years of research and stakeholder meetings, the Elkhart River Restoration Association completed a Watershed Management plan for the entire 447,000 acre Elkhart River Watershed. - Click for the Watershed Management Plan - … [Read More...]
Post Auction Photos Click HERE ________________________________________ 2015 ERRA Rain Barrel Auction, June 5 at 6:00 - Goshen First Friday's Main Stage Half of the proceeds go to the barrel artist and the other half goes to the Elkhart River Restoration Association's Walleye … [Read More...]
Exciting news this week for the Goshen Pond dredging project. We have hired dredging company Gro America! The Goshen Board of Works approved the proposed contract Monday January 25, 2016 and Gro America signed it the following day. Phase 1 of the project involves designing the spoils basin … [Read More...]
Want to take a canoe trip? Gene from the Elkhart River Restoration Association has put together a Google Map designed to help you plan your canoe trip down the Elkhart River. Click Here for the Map … [Read More...]
We are very excited about this project and need your help. While putting walleye fingerlings in the Elkhart River is super exciting, it is also expensive. The biennial cost is $5,500 (about $2.00 … [Read More...]
The following is a high resolution map of the entire 447,000 acre Elkhart River Watershed. Click on the graphic to see larger version. What is a Watershed? … [Read More...]
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clarification on pg. 21 Was it appropriate for the Target cashier to tell me to smile?
Sounds like neither of you were in the right, imo. She should not have told you to smile, but it sounds like she may have had reason to be a bit irked with you.
Chica (2003)
Chappie (2005)
Elizabeth; Aaron's wife & Juliana and Ryder's mommy.
i guess i can see it as being rude too from my side. i am for the most part pretty friendly and respectful of retail and supermarket workers because i used to be one and i truly hated rude customers.
on the flipside, it seemed like she did need help but didn't want to ask. i was frustrated with that. i do think my frustration came across as rudeness.
I also think it sounds as if you were being rude.
If I was her I would have said "Have a great day!" and then in my head said some other words.
Love my two
Okay well we all have days when things irk us, I mean that's human. I think you both were fed up with each other.
"Do what you want with my body, do what you want with my body. You can't stop my voice cause you don't own my life"
Maybe it's just the impression I get from the onslaught of "debates" like this one, but I just get sick of every single human interaction being put under the microscope of "appropriateness." Not every thing that upsets you* is "inappropriate."
*general "you."
"I choose to laugh but that's to hide my pain and incredulity." - Ms. Miyagi
she was irked at me because she was taking up unnecessary time and being inefficient. i use coupons at many many stores and i've NEVER seen it done that way where a cashier will check each item individually.
That Track Girl ♥ That Football Guy = Baby Beast (4)
Maurine. Wtf are you talking about?- meganlomaniac
^mmm i see, I get that you have never seen them done this way, but does her way = not correct. Maybe she wanted to do them her way...who knows?
"Do what you want with my body, do what you want with my body. You can't stop my voice cause you don't own my life"


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Royalty Free Music Unique To Your Project - Every Time
Royalty Free Music » Instruments » Synthesizer » Exuberant
Royalty Free Music — Synthesizer & Exuberant
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Royalty Free Synthesizer & Exuberant MusicSynthesizer Sub-Instruments: Instrumental Electronic Rock/Pop Band Drums Piano Guitar (Electric) Strings Bass (Electric) Guitar Percussion MORE »
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The following tracks match: Exuberant, Synthesizer
Up The Ladderhttps://www.smartsound.com/strata/images/STRATPWP_200.jpgSingle7100056-ST$ 39.957100056-EX$ 59.957100056-W$ 149.95Instrument: Rock/Pop Band, Bass (Electric), Drums, Guitar (Electric), Synthesizer, Instrumental, Guitar Emotions: Driving, Energetic, Exciting, Edgy, Positive, Uplifting, Atmospheric, Competitive, Confident, Extreme, Exuberant, Inspiring, Intense, Motivating, Powerful, Pulsating, Thrilling Genre: Indie Rock, Alternative Rock, Rockin, Pop Rock Production Types: Sports, Commercials, Corporate, Indie Film, Corporate Communications, Product Videos, Background
Up The Ladder from the album Power Play
Global EnergyA continuous flow of enthusiastic world-music rhythms. A sparkling variety of percussion instruments complements the busy acoustic guitars, creating an exciting crescendo of positive feelings, resourcefulness, motivation.https://www.smartsound.com/music/images/project.jpgSingle1305-ST$ 39.951305-EX$ 59.951305-W$ 149.95Instrument: Synthesizer, Instrumental Emotions: Sleek, Exciting, Happy, Uplifting, Carefree, Cheerful, Confident, Effervescent, Exuberant, Fresh, Lively, Pulsating, Spirited, Striving, Action, Upbeat Genre: Futuristic, Corporate/Technology Production Types: Corporate, Action-Drama, Science
Global Energy from the album Project Millennium
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Pick a Tuesday and come tour campus, get your questions answered, and enjoy lunch on us at the Spartan Cafe. #TourTuesdays will be great days to see the SWCC campus and meet other future SWCC students. Parents are welcome!
#TourTuesday Schedule
10 a.m. - Welcome & general college information, Administration Center
10:25 a.m. - Tour of campus
11:30 a.m. - Spartan Talk with SWCC students
12 p.m. - Lunch at the Spartan Cafe
1 p.m. - Thank you for coming!


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Apple: Same dog food, reheated
Cupertino is resting on its iLaurels while fierce competition from the valley is eating its lunch. 2014 will be a seminal year for Apple and all eyes are on what Tim cooks up at WWDC this June.
Cupertino is resting on its iLaurels while fierce competition from the valley is eating its lunch. 2014 will be a seminal year for Apple and all eyes are on what Tim cooks up at WWDC this June.
Drill down on the latest and greatest gadget deals with our guide to Black Friday 2011.
iTunes is a free application for Mac and PC. It plays all your digital music and video. It syncs content to your iPod, iPhone, and...
HP's webOS tablet, the TouchPad, has landed. It's not the entertainment powerhouse that the iPad is, but there's a lot to like for business professionals. Here's a look.
In my last posting, I blogged about whether cloud computing will survive the storm, where I concluded that the cloud is not going to go away despite some high-profile outages that have hit the headlines recently.
Let's take a look into our crystal ball and try to figure out what Apple has up its collective sleeve for tomorrow's announcements at WWDC.
CopyTrans Manager is the free iTunes alternative. Lightweight and easy to use, it allows you to manage iPhone songs, videos, playlists...
I'm betting a FaceTime-equipped iTV device will create entire new legions of rabid, insane, Apple fans. Oh, joy.
There's plenty to like about the Apple iPad, but there are also some serious annoyances that hinder the overall product experience. Here's a look at Jason Hiner's top 5 annoyances.
With CopyTrans transfer iPod, iPod Touch, iPhone and iPad music, videos, podcasts, audiobooks, movies, home made videos, apps, and...
Episode 130 PowerPage Podcast has been uploaded, listen to Tom and Jason riff on the new MacBook Pro
When the iPad was announced, I suggested that the tablet could be used in bed (or on your lap in general) as a personal movie viewer, but it does appear to offer a couple of limitations. First, you don't get a widescreen aspect ratio, and you may be limited to the iTunes monopoly for your video choices.
Ten tips to make Google Chrome faster and reduce how much RAM it uses
Enterprise Software
How to block Windows 10 upgrades on your business network (and at home, too)


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Blaska: make Democrats pay the taxpayers back for this recall
Madison blogger David Blaska — make that Madison conservative blogger David Blaska, which I know sounds like an oxymoron — is sending this bill to the Democratic Party of Wisconsin:
Dave writes:
I am sending a taxpayers' bill for $16 million c/o Mike Tate, Democrat(ic) Party of Wisconsin, 110 King St., Suite 203, Madison, WI 53703. I invite you to do the same. Copy this graphic and email it to [email protected]
I love how he throws that extra $15 onto the bill. Graeme Zielinski is the WisDems' communications director, who burned a flag while a student in 1995 and last year tweeted:
He may have taken that back since. Dunno. Regardless, his personal failings are small stuff next to the $16 million these recall elections are costing Wisconsin's taxpayers. But remember: we have to raise taxes in order to pay schoolteachers!
(Posted by The TrogloPundit)
Also see...
"We are not a nation of immigrants. We are a nation of citizens." – Mark Levin Immigration is not good for America. At least, not anymore. Immigration has benefitted our...Read More
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|Blackwell Chapter VII: A Mad Tea-Party 1.8
draught@Erzbierschof -hazy pale blond beer; strong aroma of rancid milk; thin-bodied, low carbonation, sour,rancid lactic finish with notes of vomit - without me, thanks
Saturday, March 05, 2016
|Blackwell Chapter VII: A Mad Tea-Party 2.9
Bottle from Beersnmore. Lots of elderflower over an incredibly sour Weisse. Impressive flavour for such an ABV. Is overly dominated by pinchy sourness and lacticity, making the whole thing one-sided.
Wednesday, February 10, 2016
|Blackwell Cherry Cherry Lady 3.9
draught@Armageddon, Liebefeld - black beer without foam; decently woody with notes of black cherries, hints of licorice and tobacco; low carbonation; full-bodied, assertive, sourish; dry and with a long woody aftertaste of black cherries
Tuesday, September 15, 2015
|Blackwell Waldbeeren Krisengipfel 3.9
draught@Armageddon, Liebefeld - pours a hazy pinkish-red beer without foam; aroma of red fruits, light herbal, citrus and vanilla; quite low carbonation, decently sourish, thin-bodied, rounded and clean; quite dry; accurate and assertive red fruits finish - subtle, delicate and very pleasant
Tuesday, September 15, 2015
|Blackwell the Saison Horror Show 3.7
draught@Au Trappiste - light hazy amber-orange beer with a moderate foam left; aroma of tea, quinces and prunes; moderate malt backbone and a low carbonation, light sweetness and decently bitter; light spicy; long hoppy finish dominates by notes of passion fruits
Tuesday, September 01, 2015
|Blackwell I Can See your Flanders 4.5
draught@Meet the Brewer, Au Trappiste - hazy reddish-brown beer without foam; sourish and very fruity aroma (plums, apples, sour cherries); medium-bodied, lively and fairly sour, dry, woody notes and more prunes, cherries and an everlasting sourness in the finish - great !
Tuesday, August 11, 2015
|Blackwell Tonnerre de Brett 4.1
draught@Meet the Brewer, Au Trappiste - cloudy orange beer under a solid creamy beige foam; delicate aroma of mango and litchies; clean, rounded, full-bodied, moderate carbonation, light sweetness; very fruity aromatic finish (ripe tropical fruits), light funky - wonderful
Tuesday, August 11, 2015
|Blackwell One Night in Lima 3.9
draught@Meet the Brewer, Au Trappiste - black beer with a modest foam left; gently lactic with fair notes of chocolate, light roasted, coffee notes appear while the beer gets warmer; medium-bodied, subtle carbonation, light sweetness and gently sour and tart; quite dry and long chocolatey finish with lingering lactic notes
Tuesday, August 11, 2015
|Blackwell Mermaid on the Rock 3.2
draught@Meet the Brewer, Au Trappiste - cloudy ruby-brown beer without foam; aroma of boiled red fruits and vinegar; quite thin-bodied, low carbonation and fairly sour; dry and long sour fruity finish (plums, cherries)
Tuesday, August 11, 2015
|Blackwell Peat Show 3.8
draught@Meet the Brewer, Au Trappiste - fully cloudy lactic-orange beer without foam; aroma of smoked bacon, light flowery; moderate malt body, low carbonation and fairly sour; short and dry sour finish where the smokey notes are more discrete; light astringent
Tuesday, August 11, 2015
|Blackwell Drahtesel 4.4
draught@Meet the Brewer, Au Trappiste - fully cloudy lactic-orange beer with a little white foam left; very fresh citrusy, pear-ish aroma, hints of apples and yeast; moderate malt backbone, low carbonation, very dry, light bitter and solidly sourish; very citrusy finish with more notes of pears and mango - fresh, lively and deeply pleasant
Tuesday, August 11, 2015
|Blackwell Sahti 3.3
draught at erzbierschof a while back, uploading now. Dark orange color with hardly any head. Lots of juniper berries in the aroma, maybe some other more exotic fruits. Taste is intensely sweet with the berries, ripe fruits in the aftertaste. Sticky. Something very special.
Tuesday, June 02, 2015
|Blackwell Nelsons Sour Power 4.2
courtesy of Tobias and Samuel Aeschlimann - pours a hazy lactic-blond beer without foam; sourish aroma of fresh fruits (berries, apples and citrus), moderate malt body, lively and tasty palate; fairly sour and very dry; long fruity hoppy finish with notes of lemon, grapefruit, berries and pineapple - deeply pleasant
Thursday, April 30, 2015
|Blackwell / Full Measure Nelson Terro{i}r! 4
courtesy of the Aeschlimann brothers; rated from memory - pours a bright and cloudy orange beer with a little foam left; fairly hoppy aroma of lichies and berries; full-bodied, tasty and gently sourish, clean palate and with a long hoppy finish of exotic fruits - balanced and very enjoyable
Thursday, April 16, 2015
|Blackwell Tannenbaum Effect 2.0 3.2
from Au Trappiste - light gusher; cloudy brown beer under a giant beige foamy head; piney and woody aroma, light earthy and malty; overcarbonated, astringent and solidly bitter; quite dry resiney, piney and woody aftertaste with notes of marzipan, herbs and spices - the excessive carbonation is a bit ruining this one
Tuesday, March 24, 2015
|Blackwell Tannenbaum Effect 2.0 2.4
Bottle courtesy of Philippe (Bov)
Gushing bottle. Dark brown color, huge frothy head. Chocolatey beer with a huge amount of spruce tips, resiny, artificial. Not good.
Tuesday, March 24, 2015
|Blackwell Shishiga 4.3
courtesy of the Aeschliman brothers - pitch black beer with no head retention; lot of vanilla and licorice; black cherries and tar; then come the 3 H: huge sweetness, huge malt backbone and huge bitterness; very long sweet/bitter finish with tons of chocolate, vanilla, plums and a robust warming alcohol presence - the perfect beer for women
Saturday, March 14, 2015
|Blackwell Huell Melon TArtagnan 4.1
courtesy of Andreas and Nadja Otz - hazy and bright blond-orange beer with a little foam left; aroma of melon and sour berries, lemongrass; moderate malt body, sourish and assertive, solid carbonation; light salty and long sourish fruity finish of melon, sour apples and berries; bitter and very dry - fresh, charming and classy
Thursday, March 05, 2015
|Blackwell Tannenbaum Effect 2.0 3.6
Bottle at Trappist biere Cafe bern. Pours dark opaque brown w foamy head. Aroma is a bit sour earthy with pine and spruce. Palate is heavy full bodied. Taste is strong pine and spruce balanced by the caramel malt. Great but not sure I could drink more than 1 in a sitting.
Saturday, February 14, 2015
|Blackwell Tannenbaum Effect 2.0 3.6
Brown color with huuuge beige head. Overfoaming immediately. Nice lacing soon. Very ethereal smell, like forest oils, resin. Forest forest forest (well, what do you expect when its brewed with spruces). Taste is more oily ethereal forest feeling, gingery. Earthy finish. Very full-bodied, it also tastes very strong. Fine perlage. This is very interesting, but Im not sure if I really like it. Nonetheless, well-brewed. I guess this would be a fine brew for sipping after a long hike.
Tuesday, February 03, 2015
|Blackwell Hop Suicide! 3.5
Pours a completely hazy dark amber/light brown color, topped with lots of lasting off-white head. Very pleasant citrusy aroma, some other fruits as well. Taste starts slightly fruity, but immediately hoppy bitterness kicks in - strong one. Some spices and fruity notes in the aftertaste. Pretty decent and strong.
Thursday, December 25, 2014
|Blackwell Sahti 3.7
draught@Erzbierschof - pours a cloudy copper-orange beer with a little foam left; aroma of ripe bananas, litchies and juniper; low carbonation, rounded and pretty sticky, moderate malt backbone compared to its alcohol content, sweet (very) and salty (a bit); manages to have few residual sweetness; long and light chewy aftertaste of ripe fruits (apples, bananas) - pretty nice
Wednesday, December 10, 2014
|Blackwell Hop Suicide! 4.5
courtesy of Nadja and Adrian Otz - pours a cloudy dark amber-orange beer under a long lasting foam; a solid hoppiness with notes of oranges, resine and grapefruits; full-bodied, some malt sweetness soon overwhelmed by a huge bitterness: tasty and assertive; pretty dry and very long fruity hoppy finish (orange peels, grapefruit and citrus) - a beauty !
Wednesday, November 26, 2014
|Blackwell Vanilla Polunocnica 4.5
courtesy of Toni - quite opaque black beer with no head retention; strong aroma of vanilla in the front and a fair presence of black chocolate behind; notes of tobacco and Bourbon wood; a solid sweetness, sticky, huge malt backbone, a late but robust bitterness yet the 200 IBU are almost not enough to balance the sweetness; tons of pralines, vanilla and hints of wood again in the finish - amazing !
Saturday, November 08, 2014
|Blackwell Motueka TArtagnan Neo-Berliner Weisse 4.1
courtesy of Samuel Aeschlimann - pours a hazy bright lactic blond beer under a white and long lasting head; very aromatic fruity nose (star fruits, lemon pie); moderate malt body, a fair carbonation and a solid tart acidity; lively and tasty; quite dry and long sourish, citrusy and grapefruity finish - beautiful !
Friday, August 29, 2014
|Blackwell Brewers Reserve Bipolar Frostitute 3.9
courtesy of Samuel Aeschimann - pitch black beer leaving a brown hute on the side of the glass; no foam; apparent alcohol, notes of Portwine, tar, black chocolate, nuts and black cherries; decently roasted; thick and with a huge malt backbone; gigantically bitter, warming alcohol, more chocolate, tar and marzipan in the finish - a beer to sip very carefully ... with a cigar maybe ? Impressive !
Tuesday, July 22, 2014
|Blackwell Koschei 4
Courtesy of Philippe (Bov); bb 29.03.2018
Pitch black color, small head, a few big bubbles; thick. Nice aroma, roasted malts with a delicate woody and vanilla component. Strong body; round mouthfeel; strong flavor of roasted malt, dark caramel, with moderate residual sweetness; it has a bit too much liquorice for my taste, but also a light vanilla drop; correct bitterness level; warming alcohol.
Very good; American take.
Tuesday, November 12, 2013
|Blackwell Koschei 4
courtesy of the Aeschlimanns brothers - pitch black with no foam left; aroma of whisky and prune; full-bodied, thick and sticky; hints of vanilla; some sweetness soon overwhelmed by a powerful bitterness; quite dry oily, chocolatey and coffeish finish with more notes of whisky, licorice and marzipan - beautiful
Monday, November 04, 2013
|Blackwell Brewers Reserve Blueberry Sour Ale 3.8
courtesy of the Aeschlimanns brothers - cloudy red-violet beer with no foam; light yeasty notes in the front; blueberry and vinegar take control afterwards; low carbonation and with some initial sweetness; a lively palate and wit a pretty high concentrated sourness; decently dry with a lingering blueberry finish with notes of cheese and vinegar
Thursday, September 19, 2013
|Blackwell Saurerstoff 4.1
courtesy of the Aeschlimanns brothers - dark beer with a poor head retention; some smokyness, deep roasted aroma of black chocolate, cocoa, vinegar and sour cherries; medium-bodied, a solid lactic sourness, very dry; long aftertaste of licorice, chocolate with a lingering sourness and smokyness - deeply interesting and very good !
Thursday, September 05, 2013
|Blackwell Grodziskie/Graetzer Resurrection Series 3.3
courtesy of the brewers - hazy blond-yellow beer with no head retention; a decent smokyness with notes of melon underneath; thin-bodied, decently tasty, subtle carbonation and a light sweetness; a long and well integrated smokyness in a quite dry and gently fruity finish - interesting
Sunday, August 18, 2013
|Blackwell Flying Dutchman 3.2
courtesy of Samuel Aeschlimann - pours a cloudy dark brown beer under a little beige foam; aroma of candi sugar, ripe bananas and biscuit; very sweet and full-bodied, lot of residual sweetness with hints of prunes and banana in the finish - pretty stylish
Sunday, February 10, 2013
|Blackwell Baroness Framboos 3.5
courtesy of Samuel Aeschlimann - gusher ... pours a cloudy reddish beer with a modest head left; dry raspberry aroma with some herbal tones; moderate malt body, some herbal tartness; quite long grassy and raspberry-ish aftertaste; pretty dry - very interesting
Thursday, January 24, 2013
|Blackwell Wellington Boots 3.3
courtesy of Samuel Aeschlimann - very dark brown beer with a long lasting beige foam; a medium and well-integrated smokyness, roasted malts, coffee and walnuts; medium-bodied, low carbonation, moderate bitterness; the finish is chalky, chocolatey with a lingering smokyness and dusty notes
Thursday, January 24, 2013
|Blackwell Rusalka 3.8
courtesy of Samuel Aeschlimann - black beer under a long lasting dark beige foam; fairly roasted with notes of vanilla, pralines and tar; full-bodied and with some fair sweetness, creamy palate yet pretty thick; solidly bitter, some residual sugars; strong notes of coffee, walnuts and roasted malts - solid and very well-made
Thursday, January 24, 2013


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I have a friend who is (was...) a single mom to 2 little boys -- 6 and 1. She swore she was never going to meet a guy because of her boys and gave up trying to find someone. Well, I introduced her to my little brother and they hit it off. He proposed to her in October after dating for 9 months. Of course, she said yes.
They started to plan the wedding, but being a single mom unexpected expenses came up (as we all know!) and they kept postponing the wedding. There was a radio contest for 3 couples to win a wedding (dress, cake, flowers, photography, tux, and honeymoon suite for 3 nights). Little brother and I decided to enter them into the contest with out her knowing. Well, they won! We managed to keep it a surprise from her until the wedding day -- Last Friday 2/13.
I thought that was the end of it. But I was wrong!!! (This is where my little brother brag comes into play). He called me today and asked if I was free next Monday because on Monday he is going to be a dad for the first time and wants me there. I was confused and not sure what he was talking about, so I called my friend. It turns out he has petitioned to adopt both boys and the hearing is on Monday! I am shocked and really happy for both of them.
I guess good guys really do exist. Now I think she needs to return the favor and find me one!!!
mommy to Bria (1/26/04) and "Peanut" (edd 10/13/09)


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Report claims next-gen iPhone gets iOS 6, keeps A5, SGX543 chip
A new report has emerged claiming knowledge of a number of details related to the hardware inside the next-generation iPhone. Citing an unnamed source, 9to5Mac reports that the handset is powered by a new variant of the A5 chip found in the iPhone 4S, iPad 2, and third-generation iPad, with a SGX543-based GPU, now with 1GB of RAM. The chip is dubbed the ARM S5L8950X, and the GPU is currently being called SGX543RC*, with the asterisk representing a "sensitive number that could identify people working on the device." These details are noteworthy only in that they reduce the possibility that the new iPhone will sport an A6 processor with more power than the current-generation iPad; it appears more likely that this new A5-based chip will focus on lower power consumption, instead.
The report claims that prototypes of the handset are running iOS 6, with a Darwin Kernel Version of 13.0.0, or a full release higher than found in the most recent developer beta of OS X Mountain Lion. According to the source, Apple is in the latter stages of iOS 6 development, to the point where an October release would seem easily reachable, and an earlier release is a possibility. Finally, the report claims that the revamped Maps application in iOS 6 will not feature a 3D button next to the location button, as previously reported—that button will be hidden underneath the main map interface, in the bottom right scroll/menu—and that the application will likely undergo several changes before release.
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Kodak's GC/UltraMax 400 is a high-speed daylight-balanced color negative film offering a wide exposure latitude for greater versatility, as well as a fine grain structure with consistent and accurate colors. Optimized skin tone reproduction makes this film suitable for portraiture while a vibrant overall color palette benefits general and outdoor photography. It has a nominal sensitivity of ISO 400/27° and is well-suited to both scanning and enlarging applications.
This item is one 24-exposure roll of 35mm film.
|Film Type
|Daylight-balanced color negative film
|Film Format
|35 mm (24 exposures)
|Packaging Info
|Package Weight
|0.1 lb
|Box Dimensions (LxWxH)
|4.8 x 3.8 x 1.7"


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Free Convert MP4 to AVI FLV MPEG WMV MOV Converter is the most simple converter software. It has ability to convert mpeg, mp4, 3gp, iphone to avi, divx, mp4, wmv, vcd, svcd, dvd, 3gp, ipod, iphone, zune, xbox, pmp, psp, apple tv, pocket pc, flv, swf, mov etc stream formats.
Convert DVD to AVI is a program to rip DVDs to other formats. This program is able to convert the .VOB files that can be found in any commercial DVD to other popular formats, such as DivX, Xvid, H264/AVC, MPEG4, MPEG2, WMV, Flash video, Quicktime MOV, PSP or MP3.
Free Convert FLV to AVI MP4 MOV WMV 3GP Converter is the most powerful converter. It can convert FLV to stream formats as avi, divx, mp4, wmv, vcd, svcd, dvd, 3gp, ipod, iphone, zune, xbox, psp, pmp, apple tv, pocket pc, flv, swf, mov etc. Also , you can use it to extract beautiful music as mp3, amr, ogg, m4a, aac, ac3 etc from flv to support as iPod, Zune etc portable device.
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ImTOO AVI MPEG Converter is a powerful AVI converter which can convert AVI to MPEG, convert WMV to AVI, convert MPEG to AVI. The AVI MPEG Converter supports convert AVI, MPEG, MP4, 3GP, MOV, RM, H264 AVC, WMV to AVI or MPEG.
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"Convert VOB to AVI" is a free video converter that not only transforms DVD video using codecs that can be packed into an AVI container, but which can also extract sound streams from videos to separate MP3 files or convert audio and video using some other codecs, such as MOV, FLV, or 3GP.
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text:
|Publication number
|Publication type
|Application number
|PCT number
|Publication date
|Jun 15, 2010
|Filing date
|Jan 13, 2004
|Priority date
|Jan 13, 2003
|Fee status
|Also published as
|Publication number
|Jurgen Weichart
|Original Assignee
|Oc Oerlikon Balzers Ag
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (28), Referenced by (6), Classifications (19), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
The invention relates to an installation, in particular a vacuum process installation, for processing a substrate, in particular a semiconductor wafer, having at least one processing station. The invention also relates to a processing station for an installation of this type, to a frame for an installation of this type, for holding and/or transporting the substrate, to a film which is to be clamped into the frame and to a method for processing a substrate, in particular a semiconductor wafer, in a vacuum process installation.
Semiconductor wafers for the production of integrated circuits are usually processed in vacuum process installations which comprise one or more processing stations, in which the wafer is etched or coated in a vacuum chamber, e.g. by means of a CVD (chemical vapor deposition) or PVD (physical vapor deposition) process. In this context, it is important for the wafer to be held in a mechanically stable position in the chamber during processing, and for its temperature to be monitored, so that in particular process heats applied to the wafer can be dissipated. Otherwise, there is a risk of the wafer being excessively heated, which can lead to damage or destruction of the wafer.
To increase productivity, increasingly large wafers are being used, in some cases with a diameter of 300 mm; in future, it is likely that even larger diameters will be used. The large surface area and low thickness of these substrates (typically 0.8 mm or less) impose additional mechanical demands both on the holding of the wafers while they are being processed and on the transporting of the wafers through the vacuum process installation, since even low levels of forces can lead to damage or destruction of the substrates. To improve the monitoring of the temperature, the wafers are partially ground down on the back surface until their thickness is 200 μm or less, and in some cases even just 50-75 μm. Then, the ground wafers are metallized on their back surface in a vacuum process installation. With such thin substrates, the demands imposed on holding and transport are even higher.
At the same time, good dissipation of the process heat which occurs, for example, in sputtering processes has to be ensured, since otherwise the thin substrates, with their low heat capacity, will very quickly reach temperatures of more than 150� C., at which existing layer systems on the wafers can already be damaged. Moreover, even when heated to temperatures lower than this, there is a risk of internal thermal stresses occurring in a layer which has been deposited on the substrate, and during cooling these stresses lead to deformation of this layer. Dissipation of the process heat is difficult in vacuum chambers since the heat transfer has to be effected primarily through thermal radiation.
U.S. Pat. Nos. 4,680,061 and 4,743,570 (Varian) show a method for controlling the temperature of wafers in a vacuum chamber. The wafers are held in openings in a carrier disk over their circumference by means of a plurality of clips. To be cooled, they are moved into a position adjacent to a planar surface of a cooling element, with argon being introduced into a narrow gap between the cooling element and the back surface of the wafer, so as to boost the transfer of heat from the wafer to the cooling element through heat conduction in this back-surface gas.
U.S. Pat. No. 6,477,787 B2 (Applied Materials) relates to a method for heating and cooling substrates in the same chamber, so that there is no need for a separate cooling chamber. The cooling mechanism comprises a cooling plate, onto which the substrate can be transported by a transport mechanism, e.g. a transport ring with inwardly directed carrying fingers or a plurality of lifting pins. The cooling can be improved by a flow of gas between the cooling plate and the substrate.
However, the mechanical transport and holding apparatuses disclosed in these documents are relatively unsuitable for large-area substrates with a low thickness, since the holding forces are unevenly distributed over the wafer, resulting in mechanical stresses. The maximum pressure of the back-surface gas, and therefore the maximum transfer of heat, are limited, since beyond a certain gas pressure the wafer, which is held on the circumferential side or in punctiform fashion, starts to be deformed. This means that it is impossible to achieve effective cooling for thin substrates.
U.S. Pat. No. 5,880,924 (Applied Materials) describes an electrostatic chuck which allows a substrate to be securely held in place and released quickly by shortening the chuck loading and unloading times. For this purpose, the chuck comprises a dielectric layer, onto which the substrate is placed, a charging electrode, which is embedded in the dielectric layer, and a discharging electrode, which is arranged so as to be insulated from the charging electrode and contact-connects the substrate at the surface of the dielectric layer.
U.S. Pat. No. 6,238,160 B1 (Taiwan Semiconductor Manufacturing) describes a method for transporting and electrostatically chucking a semiconductor wafer in a processing chamber, in which an electrostatic gripper arm is used. The gripper arm charges the wafer and holds it during its transportation by electrostatic forces. This has the advantage that the wafer is at the same time partially pre-charged, thereby simplifying chucking on the electrostatic chuck and making it possible to avoid a gas plasma within the chamber or a charging electrode for contact-connection of the wafer. When the wafer has been chucked on the chuck, its temperature can be controlled, with the assistance of a back-surface gas, e.g. helium, which is introduced into the space between the wafer and the chuck.
The electrostatic chuck improves the holding of the substrate. In particular, it is also possible to use a higher pressure for the back-surface gas without the substrate being deformed, which allows the dissipation of process heat to be improved.
However, the chuck is complex to produce and requires frequent maintenance; in particular, the component which contact-connects the substrate has to be replaced at regular intervals. The operation of releasing the mechanically sensitive substrate from the surface of the chuck is also critical. This is generally done using spaced-apart pins, and if the chuck is insufficiently discharged can lead to damage or destruction of the substrate.
It is an object of the invention to provide an installation which belongs to the technical field mentioned above, has a simple structure, is easy to maintain and in which a thin and/or large-area, mechanically sensitive substrate can be processed without the risk of damage or destruction.
The object is achieved by the features of claim 1. According to the invention, to hold and/or transport the substrate, the installation comprises at least one frame with a clamped-in carrier, it being possible for the substrate to be secured to the carrier over a large area.
The large-area securing means that the substrate is held securely on the carrier and is thereby mechanically stabilized, unlike when using a holding arrangement in which the substrate is held only at its edge or at spaced-apart points. Moreover, the substrate can remain on the carrier during processing, which means that there is no need for complex clamping or release operations, which are likely to cause damage, and the structure of the installation is simplified. Therefore, it is preferable for the substrate to be secured to the carrier prior to processing, and for it to remain there during the transport and processing operations and only to be released from the carrier again after processing has taken place, outside the installation. The frame with the carrier is generally transported out of the installation and is therefore easy to inspect and maintain or replace if necessary.
The invention is not restricted to the processing of semiconductor wafers, but rather can also be used for a wide range of in particular large-area and/or thin workpieces, e.g. based on glass or plastic. It is therefore suitable in particular for the processing of electronic components, including after they have been divided from one another, or solar cells.
The substrate is preferably adhesively bonded onto a first planar main surface of the carrier by means of a vacuum-compatible and releasable adhesive. This ensures large-area securing to the carrier. It is preferable for the adhesive to have a good thermal conductivity, resulting in optimum dissipation of heat.
It is advantageous for the at least one processing station to comprise an electrostatic chuck device, or electrostatic chuck for short, i.e. a chuck electrode having a planar outer surface, it being possible for the carrier to be positioned parallel and adjacent to the outer surface of the electrode. The combination of the large-area securing on the carrier and the large-area holding on the chuck allows extraordinarily stable mechanical supporting of the substrate and accordingly also good dissipation of heat. It is preferable for the extent of the planar outer surface to correspond at least to a main surface of the substrate. In certain cases, however, the useful area of the substrate may be smaller than the total surface area of the substrate main surface, e.g. if a single, quadrilateral semiconductor component is being produced on a round wafer. In this case, the planar outer surface can be selected in such a way that not all of the substrate, but rather only the useful surface area, which has been reduced for technical reasons, can be held on the chuck.
The stable securing of the substrate to a carrier clamped in a frame is also advantageous for processing stations in which cooling is not required.
It is preferable for the carrier to consist of a nonconductive dielectric material and to be provided with a conductive layer on one side. The frame is conductive at least regionally, and the carrier is clamped in the frame in such a way that the conductive layer is contact-connected to the conductive region of the frame. The conductive layer of the carrier, together with the dielectric material and the chuck electrode, forms the electrostatic chuck device, the conductive layer and the chuck electrode, as it were, forming two plates of a plate-type capacitor. If the carrier is arranged in such a way that the conductive layer faces away from the chuck electrode, i.e. that the conductive layer contact-connects the substrate, the dielectric material of the carrier increases the attraction force in the parallel-plate field.
An electrostatic chuck which is formed in this way by the electrode and the carrier clamped in the frame has a simple structure. The fact that part of the electrostatic chuck device is generally transported out of the installation together with the carrier simplifies maintenance work on the chuck device, since this extremely maintenance-intensive part can be routinely inspected and replaced if necessary. The part which remains in the installation, namely the chuck electrode, is protected during the processing of the substrate by the carrier arranged in front of it, and consequently the level of maintenance required for this part is low.
The conductive region of the frame and the contact-connection of the conductive layer of the carrier by this region allows simple connection of the second plate of the chuck device by simply having to contact-connect a contact location on the frame.
Alternatively, the carrier material selected may be a weakly doped dielectric material which has semiconducting properties. This results in the abovementioned Coulomb attraction being replaced by what is known as a Johnsen Rahbek attraction, which can be significantly stronger on account of a shorter effective plate spacing. However, the semiconducting action of the doped dielectric material often only occurs at elevated temperatures, and a continuous charging current is required to compensate for the leakage current which occurs, making the structure of the device more complex.
To release the substrate, the conductive layer of the carrier is advantageously short-circuited with the chuck electrode. With the assistance of the carrier film, this allows the substrate to be lifted off safely without any risk of damage, since there are no localized residual forces which can act on the substrate.
It is preferable for the carrier to be formed by a vacuum-compatible, thermally stable film, and for the conductive layer to be formed by a vapor-deposited metallization or a conductive polymer. An example of a suitable material for the film is polyimide. A film of this type is inexpensive; moreover, in some cases wafers are already secured to carrier films during the grinding operation, in order to be mechanically stabilized, and if an appropriate film material is selected, the same carrier can also be used for the subsequent coating, without the wafer having to be secured to a new holding device.
Alternatively, the carrier may also be produced from another nonconductive dielectric material, e.g. a ceramic or glass.
The film is advantageously from 50-200 μm, preferably approximately 100 μm, thick, and the metallization is advantageously from 0.03-0.5 μm, preferably approximately 0.1 μm, thick. This type of film thickness allows a high mechanical stability and durability of the film. At the same time, however, the cross section of the carrier is still sufficiently small for a high attracting force to be possible if the film material is used as dielectric and for it to be possible to keep the material and production costs at a low level. A metallization of the thickness indicated above can be realized at low cost and has good electrical properties for use in the electrostatic chuck according to the invention; in particular, the high conductivity of a conductive layer of this type breaks down any residual charge which may remain after the chuck has been switched off within a short time.
The thickness of the film or metallization can, of course, be adapted to the particular application, i.e. in particular the dimensions of the substrate, the mechanical conditions or the expected effects of processing. Different carriers can be used in the same installation without problems, for example including carriers made from a film material for certain substrates and different carriers, for example made from glass, for other substrates.
If radiofrequency is to be used during the processing of the substrate, e.g. during etching, the chuck electrode can be constructed on a base body which comprises a radiofrequency electrode, the chuck electrode being electrically insulated from the radiofrequency electrode. The chuck electrode is preferably contact-connected by an insulated leadthrough passing through the radiofrequency electrode. In this case, it is advantageous for the electrostatic chuck to be floating, i.e. not to be connected to the radiofrequency source or to ground potential. This also allows a radiofrequency voltage to be used in a simple way to process the substrate which has been secured to the carrier and is held by the chuck.
If the carrier is arranged in front of the chuck electrode in such a way that the conductive layer faces the chuck electrode, a dielectric is arranged in front of the chuck electrode, in such a way that it is located between the chuck electrode and the carrier. By selecting a thin dielectric with a high dielectric constant ∈r, it is possible to achieve a high attracting force irrespective of the material of the carrier. A particularly suitable dielectric is a plate of aluminum oxide Al2O3 with the high dielectric constant ∈r≈10.
Alternatively, as has already been mentioned, it is possible for the carrier to be arranged in front of the chuck electrode in such a way that the carrier material forms the dielectric between the chuck electrode and the conductive layer. This allows a simpler and less expensive structure of the installation, but on account of the typically lower dielectric constants of economically viable carrier materials, leads to lower attraction forces. However, the forces which can be achieved in this way are sufficient for many applications.
It is advantageous for the processing station to comprise a voltage source for applying a voltage between the frame and the chuck electrode, it being possible in particular to generate a DC voltage of 200-1500 V, preferably 500-1000 V. On account of the conductive connection between the frame and the conductive layer of the carrier, it is thus possible, in a simple way, to form an electrostatic chuck device, without either direct contact-connection of the substrate or a gas plasma for charging and discharging being required. The voltages indicated, for standard carrier cross sections, lead to a contact pressure which is suitable for the processing of semiconductor wafers.
The chuck electrode may comprise a plurality of regions of different polarity. This makes it possible to form a bipolar or multipolar electrostatic chuck device which does not require a counterelectrode or counterplate. In this case, therefore, there is fundamentally no need for the conductive layer of the carrier and the corresponding electrical contact-connection. In general, however, the attraction forces which can be achieved with bipolar or multipolar chuck devices are lower than with a unipolar structure.
It is preferable for the processing station to comprise a gas feed for feeding a gas into a space between the chuck electrode and the carrier, it preferably being possible to generate a gas pressure of more than 100 Pa. This allows effective dissipation of heat through heat conduction in the back-surface gas. There is an upper limit on the gas pressure which can be achieved with substrates clamped at their edge in the conventional way, since if this upper limit is exceeded, the back-surface gas pressure leads to excessive bending of the substrate, which is only clamped at the circumference. In the case of large and thin semiconductor wafers, by way of example, it is possible to reach a gas pressure of approx. 20 Pa, which is insufficient for effective cooling. The solution with an electrostatic chuck and large-area securing of the substrate to a carrier allows a significantly higher pressure of the back-surface gas and therefore significantly improved dissipation of heat from the substrate.
During certain processing steps, a chucked substrate can also be heated, for example by suitable control of the temperature of the planar outer surface of the chuck electrode. The heating can also be accelerated by a back-surface gas. Finally, there are processing steps in which there is no need to control the temperature of the substrate. In these cases, however, the chuck device according to the invention ensures that the substrate is held stably and can easily be lifted off the chuck device again after processing has taken place.
The installation according to the invention may comprise a plurality of processing stations and means, e.g. vacuum robots, for transporting the frame together with the clamped-in carrier and the substrate from a first processing station to a second processing station. By way of example, an installation of this type may be of star-shaped construction, so that vertically oriented frames are moved along a circular path, the axis of which is parallel to the main surfaces of the frames. A cluster-type structure with horizontally arranged frames is also possible. Depending on the particular objective, the frames together with the substrate are laid down in the processing stations or held during processing. The processing and transport accordingly take place at the same time or individually. On account of the fact that there is no need for a plasma as conductor or return conductor, a chuck device according to the invention can also be used for pure cooling stations, in which no plasma is built up. Cooling stations of this type may be arranged in an installation between two stations in which more extensive processing of the substrate takes place.
The following detailed description and all the patent claims give further advantageous embodiments and combinations of features of the invention.
In the drawings, which are used to explain the exemplary embodiment:
In principle, in the figures identical parts are denoted by identical reference numerals.
The dimensions of the frame 110 are such that the substrate 130 can be secured over its entire surface to the carrier film 120 clamped in the frame 110. The securing is effected between the underside 131 of the substrate 130 and the upper main surface 121 of the carrier film 120, by means of a vacuum-compatible, advantageously thermally conductive adhesive which is subsequently easy to release again. The frame 110 is composed of an annular bottom part 111 and a corresponding annular top part 112 releasably connected to the bottom part. The carrier film 120 is clamped between the bottom part 111 and the top part 112. The clamping may be effected by a pure compressive clamping action, or in addition or as an alternative, the carrier film 120 may have openings along its periphery, through which corresponding pins of the frame 110 engage.
Both the bottom part 111 and the top part 112 of the frame 110 are made from a conductive metal. The carrier film 120 is made from polyimide and is 100 μm thick. A metallization 122 with a thickness of 0.1 μm, which is electrically contact-connected by the top part 112 of the frame 110, has been vapor-deposited along the upper main surface 121 of the carrier film 120.
The frame 110 with the clamped-in carrier film 120 is arranged adjacent to a planar upper outer surface 141 of a metallic electrode 140, the lower main surface 123 of the carrier film 120 being positioned parallel to and at a short distance from the upper outer surface 141 of the electrode 140. The positioning of the frame 110 in front of the electrode 140 is advantageously effected by a guide (not shown) for the frame 110. The surface area and shape of the upper outer surface 141 of the electrode 140 substantially corresponds to the shape and surface area of the substrate 130 which has been adhesively bonded to the carrier film 120; however, the same electrode 140 also allows substrates of smaller or larger area to be held stably in place.
In the region of its axis of symmetry, the electrode 140 has a gas feed 142, through which a back-surface gas can be fed to the space between the carrier film 120 and the outer surface 141 of the electrode 140. For this purpose, a gas source, which is known per se, is not illustrated and releases the gas, e.g. argon, at a controllable pressure, is connected to the gas feed 142.
A voltage source 150, which generates a DC voltage of, for example, 700 V between the metallization 122 and the outer surface 141 of the electrode 140, is connected between the metallic electrode 140 and the frame 110, which is electrically connected to the conductive metallization 122. The frame 110 and therefore the metallization 122 are at ground potential, while the outer surface 141 is held at a potential of 700 V. This results in an attracting electrostatic force between the metallization 122 of the carrier film 120 and the outer surface 141 of the electrode 140, and the carrier film 120 with the substrate 130 secured to it is pressed onto the electrode 140. The force exerted per unit area F/A corresponds to the known formula
F/A=�∈0∈r U 2 /d 2,
in which U denotes the applied voltage and d denotes the thickness of the dielectric. With the arrangement illustrated, with a film thickness d=100 μm, voltage U=700 V and a dielectric constant ∈r=2.5 of the carrier film 120, a contact pressure p=F/A of approx. 540 Pa results. The back-surface gas pressure must not exceed the contact pressure of the electrostatic chuck, to ensure that the carrier film 120 with the substrate 130 is not pressed away from the electrode 140 by the gas pressure. In the example illustrated, therefore, it is possible, for example, to select a back-surface gas pressure of up to approx. 500 Pa, which allows very good heat transfer from the substrate to the chuck. The k value of the back-surface gas at this type of pressure is at least 50 W/m2K. The following situation results for the heat transfer:
Si wafer
Thermal conductivity
Thickness [μm]
k value [W/m2K]
7.5 � 105
5 � 103
2 � 103
% of the thermal
Under an assumed thermal load of 0.3 W/cm2 and a temperature of the electrode surface of 21� C., under stead-state conditions the result is a wafer temperature of just 83� C.
This compares with the situation without a chuck, in which the back-surface gas can only be used at a pressure of 20 Pa, since otherwise the substrate is excessively bent:
Si wafer
Thermal conductivity
Thickness [μm]
k value [W/m2K]
7.5 � 105
5 � 103
2 � 103
% of the thermal
On account of the lower gas pressure, the k value of the back-surface gas is at most 10 W/m2K. Under stead-state conditions, at the same thermal loading of 0.3 W/cm2 and the same temperature of the cooler surface of 21� C., the result is a wafer temperature of 323� C. This leads to destruction of existing layer structures and to internal thermal stresses in newly formed layers, so that the substrate is damaged or destroyed.
The frame 110 can be short-circuited with the outer surface 141 by a switch 151, so that both components are brought to ground potential. The carrier film 120 together with the substrate 130 can then be released from the electrode 140 without being impeded.
A carrier film 220, to which a large-area and thin substrate 230 has been secured, is clamped in a frame 210. Once again, the underside 231 of the substrate 230 is adhesively bonded to the upper main surface 221 of the carrier film 220. The frame 210 corresponds to the frame 110 of the first embodiment and is composed of an annular bottom part 211 and a corresponding annular top part 212, which is releasably connected to the bottom part, with the carrier film 120 clamped between the two parts of the frame.
A first difference between the second embodiment and the first embodiment consists in the fact that the metallization 222 has been vapor-deposited along the lower main surface 223 of the carrier film 220, i.e. the carrier film 220 is clamped in the reverse orientation in the frame 210. The metallization 222 is contact-connected by the bottom part 211 of the frame, which once again is made from a conductive metal.
The frame 210 with the clamped-in carrier film 220 is arranged adjacent to a dielectric plate 243, which represents the upper termination of a metallic electrode 240. The dielectric plate 243 consists of aluminum oxide Al2O3, which has a high dielectric constant ∈r≈10; the thickness is approx. 100 μm. The lower main surface 223 of the carrier film 220 bearing the metallization 222 is positioned parallel to and at a short distance from the upper main surface 244 of the dielectric plate 243.
The surface area and shape of the upper main surface 244 of the dielectric plate 243 and therefore of the electrode 240 once again correspond at least to the shape and surface area of the substrate 230 which has been adhesively bonded to the carrier film 220. Once again, the electrode 240 has a gas feed 242 in the region of its axis of symmetry, through which gas feed a back-surface gas can be fed to the space between the carrier film 220 and the upper main surface 244 of the dielectric plate 243.
A voltage source 250 is connected between the metallic electrode 140 and the frame 210, which is electrically connected to the conductive metallization 222; this voltage source once again generates a DC voltage of, for example, 700 V between the metallization 222 and the electrode 240, with the frame 210 and therefore the metallization 222 once again being at ground potential, while the electrode 240 is held at a potential of 700 V. This results in an attracting electrostatic force between the metallization 222 of the carrier film 220 and the electrode 140, so that the carrier film with the substrate 230 secured to it is pressed onto the electrode 140. Compared to the first embodiment, for the same thickness of the dielectric, the force F/A exerted per unit area in accordance with the abovementioned formula is increased by a factor of approximately 3, on account of the higher dielectric constant ∈r of the dielectric plate 243. Therefore, for the same voltage a contact pressure of approx. 1600 Pa results, so that the back-surface gas pressure can be increased if necessary, in order to further improve the control of the temperature of the substrate.
The frame 210 can once again be short-circuited with the electrode 240 by a switch 251, so that both components are brought to ground potential and the carrier film 220 together with the substrate 230 can be lifted off the electrode 140.
The electrode 340 has a base body, which is formed by a radiofrequency electrode 345 fed by a radiofrequency voltage source 360. On its top side, the radiofrequency electrode 345 is terminated by a ceramic insulator plate 346, the surface area of which corresponds to the cross section of the radiofrequency electrode 345. The chuck electrode 347, once again with the same surface area, is arranged on the insulator plate 346. Once again a gas feed 342 runs through the radiofrequency electrode 345, the insulator plate 346 and the chuck electrode 347. The frame 340 is arranged in such a way that the lower main surface 323 of the carrier film 320 is positioned parallel to and at a short distance from the upper outer surface 341 of the chuck electrode 347.
Once again, a voltage source 350, which generates a DC voltage between the metallization 322 and the upper outer surface 341 of the chuck electrode 347, is connected between the chuck electrode 347 and the frame 310, which is electrically connected to the conductive metallization 322. In this case, however, the metallization 322, unlike in the first embodiment, is not at ground potential, but rather the chuck circuit is floating and is not connected either to the radiofrequency circuit or to ground potential. The contact-connection of the chuck electrode 347 is effected through an insulated leadthrough 348 which passes through the radiofrequency electrode 345 and the insulator plate 346.
An annular shield 370, which is connected to ground potential and the cross section of which approximately corresponds to that of the frame 310, is arranged above the frame 310. This creates a dark space over the frame 310 with respect to the sputtering source used in the etching operation. This prevents material of the frame 310 from being etched away and also prevents material which has been etched from the substrate 330 from being deposited on the frame 310.
Once again, the frame 310 can be short-circuited with the outer surface 341 by a switch 351, so that both components are brought to the same potential. The carrier film 320 together with the substrate 330 can then be released from the chuck electrode 347 without being impeded.
The mechanical structure and arrangement of the frame 410 are identical to the frame of the first and third embodiments, as illustrated in
The frame 410 with the clamped-in carrier film 420 is arranged adjacent to a planar upper outer surface 441 of a metallic electrode 440, with the lower main surface 423 of the carrier film 420 positioned parallel to and at a short distance from the upper outer surface 441 of the electrode 440. The surface area and shape of the upper outer surface 441 of the electrode 440 substantially corresponds to the shape and surface area of the substrate 430 which has been adhesively bonded to the carrier film 420.
A second electrode 449, the upper surface of which is flush with the upper outer surface 441 of the electrode 440, is recessed in a central region of the upper outer surface 441 of the electrode 440. The second electrode 449 is electrically insulated from the electrode 440 by a ceramic insulator plate 446. The diameter of the second electrode 449 is approximately half the diameter of the electrode 440.
Once again, in the region of its axis of symmetry the electrode 440 has a gas feed 442, which also passes through the insulator plate 446 and the second electrode 449 and through which a back-surface gas can be fed to the space between the carrier film 420 and the outer surface 441 of the electrode 440.
A voltage source 450, which generates a DC voltage between the two electrodes 440, 449, is connected between the metallic electrode 440 and the second electrode 449. The contact-connection of the second electrode 449 is in this case effected by means of an insulated leadthrough 448 which passes through the electrode 440 and the insulator plate 446. The electrode 440 is at ground potential, while the second electrode 449 is held at a potential of 700 V. This results in a scattered electric field, which generates electrostatic charges in the metallization along the upper main surface 421 of the film 420 and possibly also in the substrate 420. These electrostatic charges, the polarity of which is opposite to that of the respectively adjacent electrode, result in an attracting force, by which the film 420 with the substrate 430 adhesively bonded to it is pressed onto the electrode 440. The embodiment illustrated, therefore, realizes the principle of a bipolar electrostatic chuck within the context of the invention. There is no need for electrical contact-connection of the metallization which has been vapor-deposited on the film 420 or of the substrate 430.
The electrodes 440, 449 can be short-circuited with one another by a switch 451, so that both components are brought to ground potential. The carrier film 420 together with the substrate 430 can then be released from the electrode 440 without being impeded.
The arrangement of the individual electrodes at the upper outer surface of the electrode is not restricted to the annular shape illustrated. The two poles may also be distributed in other ways along the surface; by way of example, the inner electrode may be designed in a star shape. Furthermore, multipolar electrodes with more than two sub-electrodes can be designed in a similar way. An example of a possible arrangement is one in which the circular outer surface is divided in annular form as in the example illustrated and is additionally halved, so as to form four regions. Then, adjacent regions are connected to the current source in such a way that they in each case have a different polarity.
A substrate 530, which has been adhesively bonded to a carrier film 520 clamped in a frame 510, is introduced into the installation at a transfer station 581 and removed from the installation again after processing, likewise at the transfer station 581. The transfer station 581 comprises, for example, a vacuum lock. The frame 510 remains vertically oriented throughout the whole of the processing. After the frame 510 together with the substrate 530 has been moved to the electrode 581 a, a voltage is applied to the electrode (and if appropriate the frame) in accordance with one of the four embodiments which have been presented, so that the frame is held securely on the electrode 581 a. The frame is then received in a star-shaped transport device (not shown), which can be used to simultaneously transport eight frames, each positioned in a processing station, in the clockwise direction into the next processing station.
The transport is followed by the first processing step in the degassing station 582, where the frame 510, as in all the processing stations 581 . . . 588, is held securely on the electrode 582 a during the processing operation. This is followed by a cooling station 583. Since no plasma is required for electrical contact-connection of the substrate in the holding device according to the invention, it is easy to cool the substrate held on the electrode 583 a. Next, there follows an etching station 584, which is in turn followed by a cooling station 585. Finally, there are three successive sputtering stations 586, 587, 588, after which the processed substrate 530 can be removed from the installation again at the transport station 581.
The dimensions indicated for the various pieces of equipment are to be understood merely as examples. They can be adapted to the particular electrical and mechanical requirements. This applies in particular to the extent and thickness of the electrode and its component parts, the frame and the film clamped therein. The materials may also be selected differently on the basis of the intended use. By way of example, it is possible for a film of a plastic other than polyimide, or as an alternative to a film a small plate of a ceramic, of glass or of another dielectric material, to be clamped into the frame as carrier for the substrate.
The voltage indicated for the direct current source can be adapted to the particular application and the dimensions of the electrode and the dielectric, so that it is possible to achieve a back-surface gas pressure which allows sufficient cooling of the substrate.
Significant influencing options result from adapting the material of the dielectric (the film in the first, third and fourth embodiments or the dielectric plate in the second embodiment). If a weakly doped dielectric material is used instead of a non-conductive dielectric material, the result is a "semiconducting dielectric". In this case, the charge shifts from the surface of the electrode into the dielectric, resulting in a shortened effective distance between the two mutually attracting "plates", which leads to a significantly higher contact pressure for the same voltage compared to an electrically insulating dielectric. What is known as a Johnsen Rahbek attraction results instead of a Coulomb attraction. A drawback of a doped dielectric of this type compared to a non-conductive dielectric may be that the semiconducting effect often only occurs at relatively high temperatures, which the installation according to the invention is in fact intended to avoid. Moreover, it is additionally necessary to provide a certain continuous charging current, so that the attraction is maintained.
The vacuum process installation illustrated is only an example. It is possible for a larger or smaller number of processing stations to be arranged in a ring or for the processing stations to be positioned linearly one behind the other. The apparatus according to the invention can also be used to load installations in which the substrates are transported on horizontally arranged carriers, e.g. in the known form of a cluster with a central handling station.
To summarize, it can be concluded that the invention provides an installation for processing a substrate which is of simple structure, easy to maintain and in which a thin and/or large-area, mechanically sensitive substrate can be processed without the risk of damage or destruction.
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|U.S. Classification
|156/345.51, 118/724, 279/128, 118/728, 156/345.52, 361/234, 118/725
|International Classification
|Cooperative Classification
|European Classification
|Jan 19, 2006
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