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Energy absorption in Ni-Mn-Ga/ polymer composites
Feuchtwanger, Jorge
In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...
The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa
ųzduran, Mustafa [Ahi Evran ▄niversitesi Fen Edebiyat Fak³ltesi Fizik B÷l³m³, K?r?ehir (Turkey); Turgut, Kemal [Y³ksek Lisans ų?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran ▄niversitesi E?itim Fak³ltesi ?lk÷?retim B÷l³m³, K?r?ehir (Turkey); ?yig÷r, Ahmet; Candan, Abdullah [Ahi Evran ▄niversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)
We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.
Transverse acoustic actuation of Ni-Mn-Ga single crystals
Simon, Jesse Matthew
Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...
Review: Bernard Rajh : G·?ati po ant∙joÜko . Gradivo za nare?ni slovar severozahodnoprleÜkega govora
Benko, Anja
je zdelo nare?no gra- divo zapisati na poenostavljen na?in (z ozna?evanjem narave naglaÜenih samo- glasnikov), npr. lßdl m [?la?d? -la] predal; kl¾j?ov -a -o [k?l?????f -va] tak v zvezi s krhlji; mņtlst?na × [?mit?s?t??na -e] predelna stena. V... oglatih oklepajih je dodan dia- lektoloÜki foneti?ni zapis posameznih besed in njihovih slovni?nih oblik (npr. [?la?d? -la], [k?l?????f -va], [?mit?s?t??na -e]). Iz slednjega so razvidne pomemb- nejÜe nare?ne oblikotvorne oziroma oblikospreminjevalne...
Synthesis and Characterization of NiMnGa Ferromagnetic Shape Memory Alloy Thin Films
Jetta, Nishitha
for fabricating NiMnGa thin films with desired composition and microstructure and hence unique properties for future MEMS actuator materials and characterize their properties to aid better understanding of their behavior. In this project NiMnGa thin films have...
Bending properties of epoxy resin matrix composites filled with NiMnGa ferromagnetic shape memory alloy powders
Zheng, Yufeng
Bending properties of epoxy resin matrix composites filled with NiŁMnŁGa ferromagnetic shape memoryŁMnŁGa Composite materials Mechanical properties Microstructure Two types of epoxy resin matrix composites filledŁMnŁGa epoxy resin composites were reported, yet the bending property of NiŁMnŁGa-polymer smart composites has
Electronic structure of Co-Ni-Ga Heusler alloys studied by resonant photoemission
Baral, Madhusmita, E-mail: email@example.com; Banik, Soma, E-mail: firstname.lastname@example.com; Ganguli, Tapas, E-mail: firstname.lastname@example.com; Chakrabarti, Aparna, E-mail: firstname.lastname@example.com; Deb, S. K. [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Thamizhavel, A. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India); Wadikar, Avinash; Phase, D. M. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore-452017 (India)
The electronic structures of Co{sub 2.01}Ni{sub 1.05}Ga{sub 0.94} and Co{sub 1.76}Ni{sub 1.46}Ga{sub 0.78} Heusler alloys have been investigated by resonant photoemission spectroscopy across the 3p-3d transition of Co and Ni. For the Ni excess composition Co{sub 1.76}Ni{sub 1.46}Ga{sub 0.78}, the valence band peak shows a shift of 0.25 eV as compared to the near stoichiometric composition Co{sub 2.01}N1{sub 1.05}Ga{sub 0.94}. Also an enhancement is observed in the Ni related satellite features in the valence band for the Ni excess composition. Due to hybridization of Co and Ni 3d states in these systems, the Co and Ni 3p-3d resonance energies are found to be higher as compared to Co and Ni metals. Theoretical first principle calculation is performed to understand the features in the valence band and the shape of the resonance profile.
Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme
Kumar, Ashish, E-mail: email@example.com; Kumar, Mukesh; Singh, R. [Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kaur, Riajeet [Department of Physics, National Institute of Technology, Kurukshetra 136119 (India); Joshi, Amish G. [CSIR - National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi - 110 012 (India); Vinayak, Seema [Solid State Physical Laboratory, Timarpur, Delhi 110054 (India)
Wet chemical passivation of n-GaN surface using Ru based solution has been reported. X-ray photoelectron spectroscopy characterization of the GaN surface revealed removal of surface oxides by the introduction of Ru complex species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated GaN and a remarkable improvement in Schottky barrier height from 0.76?eV to 0.92?eV was observed.
Understanding and development of combined acoustic and magnetic actuation of Ni?MnGa single crystals
Techapiesancharoenkij, Ratchatee, 1979-
Ni-Mn-Ga based ferromagnetic shape memory alloys (FSMAs) have emerged as a promising new class of active materials capable of producing a large (several %) magnetic-field-induced strain (MFIS). FSMAs still have several ...
Frequency Response of Acoustic-Assisted Ni¢Mn¢Ga Ferromagnetic- Shape-Memory-Alloy Actuator
Techapiesancharoenkij, Ratchatee
A prototype of Ni¢Mn¢Ga based ferromagnetic-shape-memory-alloy (FSMA) actuator was designed and built; an acoustic-assist technique was applied to the actuator to enhance its performance. A piezoelectric stack actuator was ...
Computational Thermodynamics of CoNiGa High Temperature Shape Memory Alloys
Chari, Arpita
Alloys (HTSMAs), with possible applications in the aerospace and automotive industries. Although the CoNiGa system shows significant promise for its use as HTSMAs, limited studies are available on them. Hence, a more intensive investigation...
Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials
Nicholson, Don M [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Rios, Orlando [ORNL; Hodges, Jason P [ORNL; Ludtka, Gerard Michael [ORNL; Porter, Wallace D [ORNL; Sefat, A. S. [Oak Ridge National Laboratory (ORNL); Rusanu, Aurelian [ORNL; Evans III, Boyd Mccutchen [ORNL
Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system have been explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering (LSMS) method to explore the magnetic states responsible for the magnet-caloric effect in this material. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy were investigated using differential scanning calorimetry (DSC) and superconducting quantum interference device (SQUID). Neutron scattering experiments were performed to observe the structural and magnetic phase transformations at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL) on alloys of Ni-Mn-Ga and Ni-Mn-Ga-Cu-Fe. Data from the observations are discussed in comparison with the computational studies.
Electronic Structure and Lattice Dynamics of the Magnetic Shape Memory Alloy Co2NiGa
Siewert, M.; Shapiro, S.; Gruner, M.E.; Dannenberg, A.; Hucht, A.; Xu, G.; Schlagel, D.L.; Lograsso, T.A.; Entel1, P.
In addition to the prototypical Ni-Mn-based Heusler alloys, the Co-Ni-Ga systems have recently been suggested as another prospective materials class for magnetic shape-memory applications. We provide a characterization of the dynamical properties of this material and their relation to the electronic structure within a combined experimental and theoretical approach. This relies on inelastic neutron scattering to obtain the phonon dispersion while first-principles calculations provide the link between dynamical properties and electronic structure. In contrast to Ni{sub 2}MnGa, where the softening of the TA{sub 2} phonon branch is related to Fermi-surface nesting, our results reveal that the respective anomalies are absent in Co-Ni-Ga, in the phonon dispersions as well as in the electronic structure.
Neutron diffraction study of MnNiGa{sub 2}ŚStructural and magnetic behaviour
Wang, J. L., E-mail: email@example.com [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Ma, L.; Wu, G. H. [Institute of Physics, Chinese Academy of Science, Beijing 100190 (China); Hofmann, M. [FRM-II, Technische Universitõt M³nchen, 85747 Garching (Germany); Avdeev, M.; Kennedy, S. J. [Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); Campbell, S. J. [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Md Din, M. F.; Dou, S. X. [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Hoelzel, M. [FRM-II, Technische Universitõt M³nchen, 85747 Garching (Germany); Fachbereich Materialwissenschaften, Technische Universitõt Darmstadt, 64287 Darmstadt (Germany)
MnNiGa{sub 2} crystallizes in the L21 (Heusler) structure and has a ferromagnetic ordering temperature T{sub C}???192?K. Rietveld refinement of the neutron diffraction patterns indicates that the Ga atoms occupy the equivalent 8c position, while Mn and Ni share the 4a (0, 0, 0) and 4b (0.5, 0.5, 0.5) sites with a mixed occupancy of Mn and Ni atoms. It is found that that ?83% of Mn and ?17% Ni are located at the 4a site while ?83% of Ni and ?17% Mn occupy the 4b site. There is no evidence of a magneto-volume effect around T{sub C}. In agreement with this finding, our detailed critical exponent analyses of isothermal magnetization curves and the related Arrott plots confirm that the magnetic phase transition at T{sub C} is second order.
Magnetic field-induced phase transformation and variant reorientation in Ni2MnGa and NiMnCoIn magnetic shape memory alloys
Karaca, Haluk Ersin
The purpose of this work is to reveal the governing mechanisms responsible for the magnetic field-induced i) martensite reorientation in Ni2MnGa single crystals, ii) stress-assisted phase transformation in Ni2MnGa single crystals and iii) phase...
Structural transformations in Mn{sub 2}NiGa due to residual stress
Singh, Sanjay; Maniraj, M.; D'Souza, S. W.; Barman, S. R. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001 (India); Ranjan, R. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India)
Powder x-ray diffraction study of Mn{sub 2}NiGa ferromagnetic shape memory alloy shows the existence of a 7M monoclinic modulated structure at room temperature (RT). The structure of Mn{sub 2}NiGa is found to be highly dependent on residual stress. For higher stress, the structure is tetragonal at RT, and for intermediate stress it is 7M monoclinic. However, only when the stress is considerably relaxed, the structure is cubic, as is expected at RT since the martensitic transition temperature is 230 K.
Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials
Nicholson, Don M [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Shassere, Benjamin [ORNL; Rios, Orlando [ORNL; Hodges, Jason P [ORNL; Ludtka, Gerard Michael [ORNL; Porter, Wallace D [ORNL; Safa-Sefat, Athena [ORNL; Rusanu, Aurelian [ORNL; Brown, Greg [ORNL; Evans III, Boyd Mccutchen [ORNL
Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system are explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering method. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy are investigated using differential scanning calorimetry and superconducting quantum interference device. Experiments are performed at the Spallation Neutron Source at Oak Ridge National Laboratory to observe the structural and magnetic phase transformations.
Development of Co-Ni-Ga Ferromagnetic Shape Memory Alloys (FSMAs) by Investigating the Effects of Solidification Processing Parameters
Kalaantari, Haamun
T. Nishizawa, K. Ishida, Co-Ni (Cobalt-Nickel). In: BinaryOhio, 1990, pp. [92] H. Okamoto, Co-Ga (Cobalt-Gallium). In:23 Fig. 14. DSC curve of Co-23.5at%Ni-30at%Ga (a) and
Modulation on Ni{sub 2}MnGa(001) surface
D'Souza, S. W.; Rai, Abhishek; Nayak, J.; Maniraj, M.; Dhaka, R. S.; Barman, S. R.; Schlagel, D. L.; Lograsso, T. A. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, Madhya Pradesh (India); Ames Laboratory U. S. DOE, Iowa State University, Ames, Iowa 50011-3020 (United States)
We report periodic modulation on (001) surface of Ni2MnGa ferromagnetic shape memory alloy. For the stoichiometric surface, analysis of the low energy electron diffraction (LEED) spot profiles shows that the modulation is incommensurate. The modulation appears at 200 K, concomitant with the first order structural transition to the martensitic phase.
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN
Li, X. J.; Zhao, D. G., E-mail: email@example.com; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Le, L. C.; Yang, J.; He, X. G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083 (China); Zhang, S. M.; Zhang, B. S.; Liu, J. P. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Yang, H. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083 (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China)
The significant effect of the thickness of Ni film on the performance of the Ohmic contact of Ni/Au to p-GaN is studied. The Ni/Au metal films with thickness of 15/50?nm on p-GaN led to better electrical characteristics, showing a lower specific contact resistivity after annealing in the presence of oxygen. Both the formation of a NiO layer and the evolution of metal structure on the sample surface and at the interface with p-GaN were checked by transmission electron microscopy and energy-dispersive x-ray spectroscopy. The experimental results indicate that a too thin Ni film cannot form enough NiO to decrease the barrier height and get Ohmic contact to p-GaN, while a too thick Ni film will transform into too thick NiO cover on the sample surface and thus will also deteriorate the electrical conductivity of sample.
Inverse magnetocaloric effect in Mn{sub 2}NiGa and Mn{sub 1.75}Ni{sub 1.25}Ga magnetic shape memory alloys
Singh, Sanjay, E-mail: email@example.com; Barman, S. R. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001 (India); Esakki Muthu, S.; Arumugam, S. [Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024 (India); Senyshyn, A. [Forschungsneutronenquelle Heinz Maier-Leibnitz FRM-II, Technische Universitõt M³nchen, Lichtenbergstrasse 1, 85747 Garching b. M³nchen (Germany); Rajput, P. [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, F-38000 Grenoble (France); Suard, E. [Institut Laue-Langevin, BP 156, 38042 Grenoble Cedex 9 (France)
Inverse magnetocaloric effect is demonstrated in Mn{sub 2}NiGa and Mn{sub 1.75}Ni{sub 1.25}Ga magnetic shape memory alloys. The entropy change at the martensite transition is larger in Mn{sub 1.75}Ni{sub 1.25}Ga, and it increases linearly with magnetic field in both the specimens. Existence of inverse magnetocaloric effect is consistent with the observation that magnetization in the martensite phase is smaller than the austenite phase. Although the Mn content is smaller in Mn{sub 1.75}Ni{sub 1.25}Ga, from neutron diffraction, we show that the origin of inverse magnetocaloric effect is the antiferromagnetic interaction between the Mn atoms occupying inequivalent sites.
Systematic analysis of the crystal structure, chemical ordering, and microstructure of Ni-Mn-Ga ferromagnetic shape memory alloys
Richard, Marc Louis
Ni-n-Ga based ferromagnetic shape-memory alloys (FSMAs) have shown great promise as an active material that yields a large output strain over a range of actuation frequencies. The maximum strain has been reported to be 6% ...
Elastic Constants of Ni-Mn-Ga Magnetic Shape Memory Alloys
Stipcich, M. [Universitat de Barcelona; Manosa, L. [Universitat de Barcelona; Planes, A. [Universitat de Barcelona; Morin, M. [INSA de Lyon; Zarestky, Jerel L [ORNL; Lograsso, Tom [Ames Laboratory; Stassis, C. [Ames Laboratory
We have measured the adiabatic second order elastic constants of two Ni-Mn-Ga magnetic shape memory crystals with different martensitic transition temperatures, using ultrasonic methods. The temperature dependence of the elastic constants has been followed across the ferromagnetic transition and down to the martensitic transition temperature. Within experimental errors no noticeable change in any of the elastic constants has been observed at the Curie point. The temperature dependence of the shear elastic constant C' has been found to be very different for the two alloys. Such a different behavior is in agreement with recent theoretical predictions for systems undergoing multi-stage structural transitions.
Direct evidence of detwinning in polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloys during deformation.
Nie, Z. H.; Lin Peng, R.; Johansson, S.; Oliver, E. C.; Ren, Y.; Wang, Y. D.; Liu, Y. D.; Deng, J. N.; Zuo, L.; Brown, D. E.; Northwestern Univ., China; Linkoping Univ.; Rutherford Appleton Lab.; Northern Illinois Univ.
In situ time-of-flight neutron diffraction and high-energy x-ray diffraction techniques were used to reveal the preferred reselection of martensite variants through a detwinning process in polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloys under uniaxial compressive stress. The variant reorientation via detwinning during loading can be explained by considering the influence of external stress on the grain/variant orientation-dependent distortion energy. These direct observations of detwinning provide a good understanding of the deformation mechanisms in shape memory alloys.
Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys
Merida, D., E-mail: firstname.lastname@example.com [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); GarcĒa, J. A. [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); BC Materials (Basque Centre for Materials, Application and Nanostructures), 48040 Leioa (Spain); Sßnchez-Alarcos, V.; Pķrez-Landazßbal, J. I.; Recarte, V. [Departamento de FĒsica, Universidad P·blica de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Plazaola, F. [Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain)
Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173?K show a vacancy concentration of 1100?▒?200?ppm. The vacancy migration and formation energies have been estimated to be 0.55?▒?0.05?eV and 0.90?▒?0.07?eV, respectively.
Anti-site disorder and improved functionality of Mn?NiX (X = Al, Ga, In, Sn) inverse Heusler alloys
Paul, Souvik; Kundu, Ashis; Ghosh, Subhradip, E-mail: email@example.com [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Sanyal, Biplab [Department of Physics and Astronomy, Uppsala University, Box 516, 75120 Uppsala (Sweden)
Recent first-principles calculations have predicted Mn?NiX (X = Al, Ga, In, Sn) alloys to be magnetic shape memory alloys. Moreover, experiments on Mn?NiGa and Mn?NiSn suggest that the alloys deviate from the perfect inverse Heusler arrangement and that there is chemical disorder at the sublattices with tetrahedral symmetry. In this work, we investigate the effects of such chemical disorder on phase stabilities and magnetic properties using first-principles electronic structure methods. We find that except Mn?NiAl, all other alloys show signatures of martensitic transformations in presence of anti-site disorder at the sublattices with tetrahedral symmetry. This improves the possibilities of realizing martensitic transformations at relatively low fields and the possibilities of obtaining significantly large inverse magneto-caloric effects, in comparison to perfect inverse Heusler arrangement of atoms. We analyze the origin of such improvements in functional properties by investigating electronic structures and magnetic exchange interactions.
Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy
Veis, M., E-mail: email@example.com; Beran, L.; Zahradnik, M.; Antos, R. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 12116 Prague (Czech Republic); Straka, L. [Aalto University School of Engineering, PL14200, FIN-00076 Aalto (Finland); Kopecek, J.; Fekete, L.; Heczko, O. [Institute of Physics, ASCR, Na Slovance 2, 182 21 Prague (Czech Republic)
Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323?K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4?eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.
Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors
Prokof'eva, M. M., E-mail: email@example.com [Lobachevsky State University (Russian Federation); Dorokhin, M. V.; Danilov, Yu. A.; Kudrin, A. V.; Vikhrova, O. V. [Lobachevsky State University of Nizhni Novgorod, Physicotechnical Research Institute (Russian Federation)
Electroluminescence characteristics of light-emitting diodes based on InGaAs/GaAs quantum well heterostructures with an injector layer made of ferromagnetic metal (Ni), semimetal compound (MnSb), or magnetic semiconductor (InMnAs) were comparatively studied. The general feature is electroluminescence quenching as the spacer layer thickness between a quantum well and a magnetic injector decreases. It was found that the temperature dependence of the electroluminescence in diodes with Ni and MnSb is caused by thermal ejection of carriers from the quantum well; in diodes with InMnAs, it is caused by the temperature dependence of the carrier concentration in magnetic semiconductor and thermal ejection of carriers from the quantum well in the high-temperature region.
Extended investigation of intermartensitic transitions in Ni-Mn-Ga magnetic shape memory alloys: A detailed phase diagram determination
Ūakir, Asli; Akt³rk, Selńuk [Mu?la ▄niversitesi, Fizik B÷l³m³, 48000 Mu?la (Turkey); Righi, Lara [Dipartimento Chimica GIAF, Universita di Parma, Parco Area delle Scienze 17/A, 43010 Parma (Italy); Albertini, Franca [IMEM-CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy); Acet, Mehmet; Farle, Michael [Faculty of Physics and Center for Nanointegration (CENIDE), Universitõt Duisburg-Essen, D-47048 Duisburg (Germany)
Martensitic transitions in shape memory Ni-Mn-Ga Heusler alloys take place between a high temperature austenite and a low temperature martensite phase. However, intermartensitic transformations have also been encountered that occur from one martensite phase to another. To examine intermartensitic transitions in magnetic shape memory alloys in detail, we carried out temperature dependent magnetization, resistivity, and x-ray diffraction measurements to investigate the intermartensitic transition in Ni{sub 50}Mn{sub 50¢x}Ga{sub x} in the composition range 12?x?25 at. %. Rietveld refined x-ray diffraction results are found to be consistent with magnetization and resistivity data. Depending on composition, we observe that intermartensitic transitions occur in the sequences 7M?L1{sub 0},?5M?7M, and 5M?7M?L1{sub 0} with decreasing temperature. The L1{sub 0} non-modulated structure is most stable at low temperature.
Effect of ball milling and post-annealing on magnetic properties of Ni49.8Mn28.5Ga21.7 alloy powders
Zheng, Yufeng
, The University of Western Australia, Crawley WA6009, Australia c Department of Advanced Materials mechanical energy absorption [8,9]. NiŁMnŁGa powders have been prepared by various methods, including spark
Static critical phenomena in Co-Ni-Ga ferromagnetic shape memory alloy
Sethi, Brahmananda, E-mail: firstname.lastname@example.com; Sarma, S., E-mail: firstname.lastname@example.com; Srinivasan, A., E-mail: email@example.com; Santra, S. B., E-mail: email@example.com [Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
Ferromagnetic shape memory alloys are smart materials because they exhibit temperature driven shape memory effect and magnetic field induced strain. Thus two types of energy, i.e. thermal and magnetic, are used to control their shape memory behaviour. Study of critical phenomenon in such materials has received increased experimental and theoretical attention for better understanding of the magnetic phase transition behavior as well as further development of ferromagnetic shape memory materials. In the present study we report the preparation and characterization of bulk Co{sub 45}Ni{sub 25}Ga{sub 30} alloy, prepared by a sequence of arc melting technique followed by homogenization at 1150 ░C for 24 hours and ice-water quenching. Structural and magnetic properties of the alloys were studied by means of X-ray diffraction and vibrating sample magnetometer in an applied field range of ▒18 kOe equipped with a high temperature oven. We have determined the critical temperature T{sub C} (?375.5 K) and the critical exponents viz; ?=0.40, ?=1.68 and ?=5.2. Asymptotic critical exponents ?, ?, and ? obey Widom scaling relation, ?+?=??, and the magnetization data satisfy the scaling equation of state for second-order phase transition in the asymptotic critical region.
Delocalization and hybridization enhance the magnetocaloric effect in Ni2Mn0.75Cu0.25Ga
Roy, Sujoy; Blackburn, E.; Valvidares, S. M.; Fitzsimmons, M. R.; Vogel, Sven C.; Khan, M.; Dubenko, I.; Stadler, S.; Ali, N.; Sinha, S. K.; Kortright, J. B.
In view of the looming energy crisis facing our planet, attention increasingly focuses on materials potentially useful as a basis for energy saving technologies. The discovery of giant magnetocaloric (GMC) compounds - materials that exhibit especially large changes in temperature as the externally applied magnetic field is varied - is one such compound 1. These materials have potential for use in solid state cooling technology as a viable alternative to existing gas based refrigeration technologies that use choro-fluoro - and hydro-fluoro-carbon chemicals known to have a severe detrimental effect on human health and environment 2,3. Examples of GMC compounds include Gd5(SiGe)4 4, MnFeP1-xAsx 5 and Ni-Mn-Ga shape memory alloy based compounds 6-8. Here we explain how the properties of one of these compounds (Ni2MnGa) can be tuned as a function of temperature by adding dopants. By altering the free energy such that the structural and magnetic transitions coincide, a GMC compound that operates at just the right temperature for human requirements can be obtained 9. We show how Cu, substituted for Mn, pulls the magnetic transition downwards in temperature and also, counterintuitively, increases the delocalization of the Mn magnetism. At the same time, this reinforces the Ni-Ga chemical bond, raising the temperature of the martensite-austenite transition. At 25percent doping, the two transitions coincide at 317 K.
Synthesis of the Sterically Related Nickel Gallanediyl Complexes [Ni(CO)3(GaAr?)] (Ar?Ā=ĀC6H3-2,6-(C6H3-2,6-iPr2)2) and [Ni(CO)3(GaL)] (LĀ=ĀHC[C(CH3)N(C6H3-2,6-iPr2)]2): Thermal Decomposition of [Ni(CO)3(GaAr?)] to give the Cluster [Ni4(CO)7(GaAr?)3
Serrano, Oracio; Hoppe, Elke; Power, Philip P.
23.9 (CH(CH 3 ) 2 ). IR m CO (cm -1 ): 2024 (s), 1972 (vs).Synthesis of Ni 4 (CO) 7 (GaAr 0 ) 3 (2) A deep greena toluene (5 mL) solution of Ni(CO) 4 (0.038 g, 27 lL, 0.205
Effect of Heat-Treatment on the Phases of Ni-Mn-Ga Magnetic Shape Memory Alloys
Huq, Ashfia [ORNL; Ari-Gur, Pnina [Western Michigan University; Kimmel, Giora [University of the Negev; Richardson, James W [Argonne National Laboratory (ANL); Sharma, Kapil [Indian Institute of Technology, Kanpur
The Heusler alloys Ni50Mn25+xGa25-x display magnetic shape memory effect (MSM) with very fast and large reversible strain under magnetic fields. This large strain and the speed of reaction make MSM alloys attractive as smart materials. Our crystallographic investigation of these alloys, focused on non-stoichiometric composition with excess of manganese. Using neutron diffraction, we revealed the necessary processing parameters to achieve and preserve the homogeneous metastable one-phase martensitic structure that is needed for an MSM effect at room temperature.
Thickness dependence of magnetic anisotropy in thin Ni films electrodeposited onto the (011) and (001) surfaces of n-GaAs
Gubbiotti, G.; Carlotti, G.; Tacchi, S.; Liu, Y.-K.; Scheck, C.; Schad, R.; Zangari, G. [INFM CRS-SOFT, c/o Universita di Roma 'La Sapienza', I-00185, Rome (Italy); INFM UdR-Perugia, c/o Dipartimento di Fisica, Universita di Perugia, Via A. Pascoli, 06123 Perugia (Italy); INFM-National Center for nanoStructures and bioSystem at Surfaces (S3) Modena, and Dipartimento di Fisica, Universita di Perugia, Via A. Pascoli, 06123 Perugia (Italy); IINFM UdR-Perugia, Dipartimento di Fisica, Universita di Perugia, Via A. Pascoli, 06123 Perugia (Italy); MINT Center, University of Alabama, Tuscaloosa Alabama 35401 (United States); Department of Materials Science and Engineering and Center for Electrochemical Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
Brillouin light scattering from thermal spin waves has been exploited to investigate the thickness dependence of magnetic anisotropy of Ni films, with thickness in the range 7-35 nm, grown by electrodeposition onto either (011)- or (001)-GaAs substrates. In the former case, Ni films exhibit a well-defined in-plane uniaxial anisotropy induced by the symmetry of the substrate. In the case of the (001)-GaAs substrate, instead, the magnetic anisotropy results from a combination of both a fourfold and a twofold contribution. The physical mechanisms responsible for the observed anisotropy, as well as its dependence on film thickness, are discussed in detail.
4D STUDY OF STRAIN GRADIENTS EVOLUTION IN TWINNED NiMnGa SINGLE CRYSTALS UNDER MAGNETIC FIELD
Barabash, Rozaliya [ORNL; Xu, Ruqing [Argonne National Laboratory (ANL); Barabash, Oleg M [ORNL; Sozinov, Alexei [AdaptaMat, Finland
Time-resolved 3D X-ray microscopy with a submicron beam size was used to follow the evolution of strains in off-stoichiometric NiMnGa twinned crystals near type I (hard) twin boundary under magnetic field. Laminate A/B microstructure was revealed near the twin boundaries in A variant. Large strain gradients are observed in the C variant in the immediate vicinity of the type I twin boundary: the lattice is under large tensile strains ~0.4% along the c- axes within first micron. Distinct a and b lattice parameter evolution with temperature and magnetic field is demonstrated. In an applied magnetic field the strain field was observed at larger distances from the twin boundary and becomes more complex. Stochastic twin boundary motion was observed after the magnetic field reaches a certain critical value.
Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
Zhao, Jingtao; Lin, Zhaojun, E-mail: firstname.lastname@example.com; Luan, Chongbiao; Zhou, Yang; Yang, Ming [School of Physics, Shandong University, Jinan 250100 (China); Lv, Yuanjie; Feng, Zhihong [National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
In this study, we investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with Ti/Al/Ni/Au gate electrodes using the measured capacitance-voltage, current-voltage characteristics, and micro-Raman spectroscopy. We found that the uneven distribution of the strain caused by the Schottky metals was a major factor that generates the polarization Coulomb field scattering in AlGaN/AlN/GaN HFETs, and after appropriate rapid thermal annealing (RTA) processes, the polarization Coulomb field scattering was greatly weakened and the two-dimensional electron gas electron mobility was improved. We also found that the Schottky barrier height and the DC characteristics of the devices became better after appropriate RTA. Of course, the electrical performances mentioned above became deteriorated after excessive annealing.
Institut Jozef Stefan Odsek za reaktorsko tehniko
?umer, Slobodan
Institut ╗Jozef Stefan½ Odsek za reaktorsko tehniko 1 Nuclear energy - four months after Fukushima fuel pool #12;Nuclear physics and engineering - fundamentals ... Fission ~200 MeV energy Out Scheme of High pressure Emergency Core Cooling System (ECCS) #12;Sever accident - core melting Energy
Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics
Arehart, A R; Moran, B; Speck, J S; Mishra, U K; DenBaars, S P; Ringel, S A
on two types of GaN templates on sapphire substrates toepitaxially overgrown? substrate. The uid n-GaN layers were
Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200?MeV Ag{sup 14+} ions
Kumar, Ashish [Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Tanuj; Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Hõhnel, A. [Max-Planck Institute for Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Singh, R. [Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Ni/GaN Schottky barrier diodes were irradiated with 200?MeV Ag ions up to fluence of 1?ū?10{sup 11} ions/cm{sup 2} at the substrate temperature of 80?K. Post-irradiation current-voltage measurements showed that the ideality factor, n increased and the reverse leakage current, I{sub R} decreased with increase in fluence. But Schottky barrier height, ?{sub b} increased only marginally with increase in ion fluence. In situ resistivity measurements showed orders of magnitude increase in resistivity of GaN epitaxial film with irradiation fluence. Cross-sectional transmission electron microscopy images revealed the presence of defect clusters in bulk GaN after irradiation.
Single crystal neutron diffraction study of lattice and magnetic structures of 5M modulated Ni2Mn1.14Ga0.86
Pramanick, Abhijit [ORNL] [ORNL; Wang, Xiaoping [ORNL] [ORNL; An, Ke [ORNL] [ORNL; Stoica, Alexandru Dan [ORNL] [ORNL; Hoffmann, Christina [ORNL] [ORNL; Wang, Xun-Li [ORNL] [ORNL
A comprehensive description of the crystal and magnetic structures of Ni-Mn-Ga magnetic shape memory alloys is important to understand the physical origins of their magnetoelastic properties. These structural details for an off-stoichiometric Ni2Mn1.14Ga0.86 alloy have been obtained from refinement of high-resolution single crystal neutron diffraction data following a (3+1)-dimensional superspace formalism. In particular, the structure adopts a P2/m( 0 )00 (3+1)-D superspace symmetry with the following fundamental lattice parameters: a=4.255(4) , b=5.613(4) , c=4.216(3) , a commensurate periodicity of 5M and a modulation wave vector of . The magnetic moments are aligned along the b-axis. The modulations for atomic site displacements, site occupancies and magnetic moments are elucidated from a (3+1)-D refinement of the neutron diffraction data. In addition to atomic displacements corresponding to shear waves along <110>, distortions of Ni-centric tetrahedra are also evident. Physical interpretations for the different structural distortions and their relationship with magnetic properties are discussed.
Konferenca Komisije za slovansko besedotvorje pri MSK
Breznik, Irena Stramlji?
imenih za moÜki in ×enski spol z vidika sistemskih mo×no- sti in besedilnih realizacij v bolgarÜ?ini. Mesto besedotvornih prilo×nostnic v oglasih je zanimalo dve referntki: E. Korjakowcewa je predstavila tvorbeno kompresijo v oglasih v razmerju tvor... v tekstih. V Radeva (Sofija) pa je razpravljala o razmerju besedo- tvornih in leksikalnih parametrov v tvorjenkah z vidika tvorbenih zmo×no- sti in leksikalne norme. Mestu izimenske leksike v besedo- tvorju sta bila posve?ena dva referata. C...
Effects of the interplay between atomic and magnetic order on the properties of metamagnetic Ni-Co-Mn-Ga shape memory alloys
SeguĒ, C., E-mail: email@example.com [Departament de FĒsica, Universitat de les Illes Balears, Campus universitari. Cra. de Valldemossa km 7.5, 07122 Palma de Mallorca (Spain)
Ni-Co-Mn-Ga ferromagnetic shape memory alloys show metamagnetic behavior for a range of Co contents. The temperatures of the structural and magnetic transitions depend strongly on composition and atomic order degree, in such a way that combined composition and thermal treatment allows obtaining martensitic transformation between any magnetic state of austenite and martensite. This work presents a detailed analysis of the effect of atomic order on Ni-Co-Mn-Ga alloys through the evolution of structural and magnetic transitions after quench from high temperatures and during post-quest ageing. It is found that the way in which the atomic order affects the martensitic transformation temperatures and entropy depends on the magnetic order of austenite and martensite. The results can be explained assuming that improvement of atomic order decreases the free energy of the structural phases according to their magnetic order. However, it is assumed in this work that changes in the slopeŚthat is, the entropyŚof the Gibbs free energy curves are also decisive to the stability of the two-phase system. The experimental transformation entropy values have been compared with a phenomenological model, based on a Bragg¢Williams approximation, accounting for the magnetic contribution. The excellent agreement obtained corroborates the magnetic origin of changes in transformation entropy brought about by atomic ordering.
Study of the N=50 major shell effect close to $^{78}$Ni : First evidence of a weak coupling structure in $^{83}\\_{32}$Ge$\\_{51}$ and three-proton configuration states in $^{81}\\_{31}$Ga$\\_{50}$
D. Verney; F. Ibrahim; O. Perru; O. Bajeat; C. Bourgeois; M. Ducourtieux; C. Donzaud; S. Essabaa; S. Gales; L. Gaudefroy; D. Guillemaud-Mueller; F. Hammache; C. Lau; H. Lefort; F. Le Blanc; A. C. Mueller; F. Pougheon; B. Roussiere; J. Sauvage; O. Sorlin
New levels were attributed to $^{81}\\_{31}$Ga$\\_{50}$ and $^{83}\\_{32}$Ge$\\_{51}$ which were fed by the $\\beta$-decay of their respective mother nuclei $^{81}\\_{30}$Zn$\\_{51}$ and $^{83}\\_{31}$Ga$\\_{52}$ produced by fission at the "PARRNe" ISOL set-up installed at the Tandem accelerator of the Institut de Physique Nucl\\'eaire, Orsay. We show that the low energy structure of $^{81}\\_{31}$Ga$\\_{50}$ and $^{83}\\_{32}$Ge$\\_{51}$ can easily be explained within the natural hypothesis of a strong energy gap at N=50 and a doubly-magic character for $^{78}$Ni.
Univerza v Ljubljani Fakulteta za matematiko in fiziko
Ramsak, Anton
velja za mogoŻ opis zikalne realnosti. Tudi pri Everettovi interpretaciji je cilj vpeti postulate v ▓ir lahko opi▓emo z valovno funkcijo, ki se spreminja deterministiŻno skladno z: i t = H (2.1) dokler ne. Njuno stanje zapi▓e z O1+M . ObiŻajno ne zaŻrtamo natanŻne meje, do katere lahko sistem ▓e opi▓emo z
In-situ high-energy x-ray diffuse-scattering study of the phase transition in a Ni{sub 2}MnGa ferromagnetic shape-memory crystal.
Wang, G.; Yan-Dong, W.; Yang, R.; Yan-Dong, L.; Peter, L. K.; X-Ray Science Division; Northeastern Univ.; Univ. of Tennessee
The full information on the changes in many crystallographic aspects, including the structural and microstructural characterizations, during the phase transformation is essential for understanding the phase transition and 'memory' behavior in the ferromagnetic shape-memory alloys. In the present article, the defects-related microstructural features connected to the premartensitic and martensitic transition of a Ni{sub 2}MnGa single crystal under a uniaxial pressure of 50 MPa applied along the [110] crystallographic direction were studied by the in-situ high-energy X-ray diffuse-scattering experiments. The analysis of the characteristics of diffuse-scattering patterns around different sharp Bragg spots suggests that the influences of some defect clusters on the pressure-induced phase-transition sequences of Ni2MnGa are significant. Our experiments show that an intermediate phase is produced during the premartensitic transition in the Ni{sub 2}MnGa single crystal, which is favorable for the nucleation of a martensitic phase. The compression stress along the [110] direction of the Heusler phase can promote the premartensitic and martensitic transition of the Ni{sub 2}MnGa single crystal.
Influence of boron on the microstructural and mechanical properties of Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5} shape memory alloy
Ramudu, M., E-mail: email@example.com; Kumar, A. Satish, E-mail: email@example.com; Seshubai, V., E-mail: firstname.lastname@example.com [School of Physics, University of Hyderabad, Central University P. O., Hyderabad - 500 046 (India); Rajasekharan, T. [Department of Physics, Rajiv Gandhi University of Knowledge Technologies, IIIT-Campus, Gachibowli, Hyderabad - 500 032 (India)
Boron addition to Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5} alloy is found to modify the microstructure and mechanical properties substantially. Studies on (Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5})B{sub x} alloys reveal that boron addition causes grain refinement which led to an increase in compressive strength in x=0.5 alloy which also retained multimode twinning. Substantial second phase segregation rich in Ni was seen at grain boundaries, the extent of which increased with boron content. This led to a compositional shift in the matrix phase which resulted in a reduction in the martensitic transformation temperature and which in turn caused an easy deformation at low stresses and suppression of multimode twinning in x=1.0 alloy.
Low Energy States of $^{81}_{31} Ga_{50}$ : Elements on the Doubly-Magic Nature of $^{78}$Ni
David Verney; C. Bourgeois; C. Donzaud; S. Essabaa; S. Gales; L. Gaudefroy; D. Guillemaud-Mueller; F. Hammache; F. Ibrahim; C. Lau; F. Le Blanc; A. C. Mueller; O. Perru; F. Pougheon; B. Roussiere; J. Sauvage; O. Sorlin; D. Verney
Excited levels were attributed to $^{81}_{31}$Ga$_{50}$ for the first time which were fed in the $\\beta$-decay of its mother nucleus $^{81}$Zn produced in the fission of $^{nat}$U using the ISOL technique. We show that the structure of this nucleus is consistent with that of the less exotic proton-deficient N=50 isotones within the assumption of strong proton Z=28 and neutron N=50 effective shell effects.
Control of domain wall pinning by localised focused Ga?{sup +} ion irradiation on Au capped NiFe nanowires
Burn, D. M., E-mail: firstname.lastname@example.com; Atkinson, D. [Department of Physics, Durham University, Durham (United Kingdom)
Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.
Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As
Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: email@example.com [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)
Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D}?=?3?ū?10{sup 19?}cm{sup ?3}) with a specific contact resistance (?{sub c}) of 4.0 ū 10{sup ?8?}▒?7 ū 10{sup ?9} ?Ęcm{sup 2} and 4.6 ū 10{sup ?8?}▒?9 ū 10{sup ?9} ?Ęcm{sup 2}, respectively, after annealing at 350?░C for 60?s. With an ammonium sulfide pre-metallization surface treatment, ?{sub c} is further reduced to 2.1 ū 10{sup ?8?}▒?2 ū 10{sup ?9} ?Ęcm{sup 2} and 1.8 ū 10{sup ?8?}▒?1 ū 10{sup ?9} ?Ęcm{sup 2} on epilayers with and without 10?nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.
Synthesis of the Sterically Related Nickel Gallanediyl Complexes [Ni(CO)3(GaAr?)] (Ar?Ā=ĀC6H3-2,6-(C6H3-2,6-iPr2)2) and [Ni(CO)3(GaL)] (LĀ=ĀHC[C(CH3)N(C6H3-2,6-iPr2)]2): Thermal Decomposition of [Ni(CO)3(GaAr?)] to give the Cluster [Ni4(CO)7(GaAr?)3
Serrano, Oracio; Hoppe, Elke; Power, Philip P.
of the Sterically Related Nickel Gallanediyl Complexesof the Sterically Related Nickel Gallanediyl Complexes [Ni(4. Keywords Gallium ┴ Nickel ┴ Steric hindrance ┴ Carbonyl
E-Print Network 3.0 - avaryiyi za dopomogoyu Sample Search Results
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for: avaryiyi za dopomogoyu Page: << < 1 2 3 4 5 > >> 1 Identification of the protein folding transition state from molecular dynamics trajectories Summary: - ble S-1 12;Muff...
High strain in polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys under overlapped static and oscillating magnetic fields
Montanher, D. Z.; Pereira, J. R. D.; C¾tica, L. F.; Santos, I. A. [Department of Physics, State University of Maringß, Av. Colombo 5790, Maringß - PR 87020-900 (Brazil); Gotardo, R. A. M. [Technological Federal University of Paranß, Av. Alberto Carazzai 1640, Cornķlio Proc¾pio - PR 86300-000 (Brazil); Viana, D. S. F.; Garcia, D.; Eiras, J. A. [Department of Physics, Federal University of SŃo Carlos, Rod. Washington Luiz, Km 235, SŃo Carlos - SP 13565-905 (Brazil)
Martensitic polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys, with a stacking period of 14 atomic planes at room temperature, were innovatively processed by combining high-energy ball milling and powder metallurgy. Bulk samples were mechanically coupled to a piezoelectric material in a parallel configuration, and the mechanical deformation of the studied system due to the twin's variant motion was investigated under overlapped static and oscillating magnetic fields. A reversible and high mechanical deformation is observed when the frequency of the oscillating magnetic field is tuned with the natural vibration frequency of this system. In this condition, a linear deformation as a function of the static magnetic field amplitude occurs in the ▒4 kOe range, and a mechanical deformation of 2% at 10 kOe is observed.
Shape memory response of ni2mnga and nimncoin magnetic shape memory alloys under compression
Brewer, Andrew Lee
In this study, the shape memory response of Ni2MnGa and NiMnCoIn magnetic shape memory alloys was observed under compressive stresses. Ni2MnGa is a magnetic shape memory alloy (MSMA) that has been shown to exhibit fully reversible, stressassisted...
TISKOVINFORMACE Cenu Siemens 2012 za nejvznamnjs inovaci zskali vdci z Brna
Savicky, Petr
TISKOV┴INFORMACE Cenu Siemens 2012 za nejv²znamnjsĒ inovaci zĒskali vdci z Brna (Brno, 4. prosince soutze Werner von Siemens Excellence Award 2012 v kategorii: Nejv²znamnjsĒ v²sledek v²voje/inovace. K vyhlßsenĒ vĒtz Ceny Siemens pro letosnĒ rok doslo vcera v prazskķ Betlķmskķ kapli. Jde o v²razn² ·spch
Ni-Mn-Ga shape memory nanoactuation
Kohl, M., E-mail: firstname.lastname@example.com; Schmitt, M.; Krevet, B. [Karlsruhe Institute of Technology, IMT, P.O. Box 3640, 76021 Karlsruhe (Germany); Backen, A.; Schultz, L. [IFW Dresden, P.O. Box 270116, 01171 Dresden (Germany); Fõhler, S. [IFW Dresden, P.O. Box 270116, 01171 Dresden (Germany); Technische Universitõt Chemnitz, Institute of Physics, 09107 Chemnitz (Germany)
To probe finite size effects in ferromagnetic shape memory nanoactuators, double-beam structures with minimum dimensions down to 100?nm are designed, fabricated, and characterized in-situ in a scanning electron microscope with respect to their coupled thermo-elastic and electro-thermal properties. Electrical resistance and mechanical beam bending tests demonstrate a reversible thermal shape memory effect down to 100?nm. Electro-thermal actuation involves large temperature gradients along the nanobeam in the order of 100?K/?m. We discuss the influence of surface and twin boundary energies and explain why free-standing nanoactuators behave differently compared to constrained geometries like films and nanocrystalline shape memory alloys.
alloy films ni: Topics by E-print Network
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memory alloy Elastic modulus Wrinkling Thermoelastic strain in a polycrystalline Fe-Pd thin film 22 Magnetic and Structural Properties of Ni-Mn-Ga Films Produced Via Physical...
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Chiao, Jung-Chih
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Author Addresses: J.A. van Biljon, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; email@example.com
Williamson, John
Addresses: J.A. van Biljon, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; email@example.com P Kotze, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; firstname.lastname@example.com K. V. Renaud, Department of Computing Science, The University
Generalized Uhlenbeck-Goudsmit hypothesis 'Magnetic' S^{a} and 'Electric' Z^{a} Spins
Tomislav Ivezic
In this paper, the connection between the dipole moment tensor D^{ab} and the spin four-tensor S^{ab} is formulated in the form of the generalized Uhlenbeck-Goudsmit hypothesis, D^{ab}=g_{S}S^{ab}. It is also found that the spin four-tensor S^{ab} can be decomposed into two 4-vectors, the usual `space-space' intrinsic angular momentum S^{a}, which will be called `magnetic' spin (mspin), and a new one, the `time-space' intrinsic angular momentum Z^{a}, which will be called `electric' spin (espin). Both spins are equally good physical quantities. Taking into account the generalized Uhlenbeck-Goudsmit hypothesis, the decomposition of S^{ab} and the decomposition of D^{ab} into the dipole moments m^{a} and d^{a}, we find that an electric dipole moment (EDM) of a fundamental particle, as a four-dimensional (4D) geometric quantity, is determined by Z^{a} and not, as generally accepted, by the spin $\\mathbf{S}$ as a 3-vector. Also it is shown that neither the T inversion nor the P inversion are good symmetries in the 4D spacetime. In this geometric approach, only the world parity W, Wx^{a}=-x^{a}, is well defined in the 4D spacetime. Some consequences for elementary particle theories and experiments that search for EDM are briefly discussed.
Suppression of g phase in Ni38Co12Mn41Sn9 alloy by melt spinning and its effect on martensitic transformation and magnetic properties
Zheng, Yufeng
Ni43Co7Mn39Sn11 alloy fabricated by spark plasma sintering (SPS) [3]. In NiMnSn, NiMnGa and Ni by spark plasma sintering [3]. The g phase usually deteriorates shape memory effect due to its impediment
WORLDVIEW THEORY AND THE CONCEPTUALISATION OF SPACE Marc Schfer, Rhodes University, Grahamstown, South Africa, firstname.lastname@example.com
Spagnolo, Filippo
, Grahamstown, South Africa, email@example.com Introduction The aim of this paper and presentation is to shareMathematicsin South Africa for example, sees space and shape within a context of social experiences. One and representexperienceswithshape,space,timeand motion, using all available senses" (Republic of South Africa, 1997). This apparent
Crystallographic, magnetic, and electronic structures of ferromagnetic shape memory alloys Ni{sub 2}XGa (X=Mn,Fe,Co) from first-principles calculations
Bai, J. [Key Laboratory for Anisotropy and Texture of Materials (MOE), Northeastern University, 110004 Shenyang (China); LETAM, CNRS FRE 3143 (former UMR 7078), University of Metz, 57045 Metz (France); Raulot, J. M.; Zhang, Y. D.; Esling, C. [LETAM, CNRS FRE 3143 (former UMR 7078), University of Metz, 57045 Metz (France); Zhao, X.; Zuo, L. [Key Laboratory for Anisotropy and Texture of Materials (MOE), Northeastern University, 110004 Shenyang (China)
The crystallographic, magnetic and electronic structures of the ferromagnetic shape memory alloys Ni{sub 2}XGa (X=Mn, Fe, and Co), are systematically investigated by means of the first-principles calculations within the framework of density functional theory using the VIENNA AB INITIO SOFTWARE PACKAGE. The lattice parameters of both austenitic and martensitic phases in Ni{sub 2}MnGa have been calculated. The formation energies of the cubic phase of Ni{sub 2}XGa are estimated, and show a destabilization tendency if Mn atom is substituted by Fe or Co. From Ni{sub 2}MnGa to Ni{sub 2}CoGa, the down spin total density of states (DOS) at Fermi level is gradually increasing, whereas that of the up spin part remains almost unchanged. This is the main origin of the difference of the magnetic moment in these alloys. The partial DOS is dominated by the Ni and Mn 3d states in the bonding region below E{sub F}. There are two bond types existing in Ni{sub 2}XGa: one is between neighboring Ni atoms in Ni{sub 2}MnGa; the other is between Ni and X atoms in Ni{sub 2}FeGa and Ni{sub 2}CoGa alloys.
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-
Demir, Hilmi Volkan
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN
Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes
Yang, Peidong
from the substrate. Ni/Au (20 nm / 20 nm) contacts were deposited on the p-GaN substrate in a geometryS1 Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes Christopher Hahn, Zhaoyu. The straight line represents the Vegard's law correlation between GaN (c = 5.188 ┼) and InN (c = 5.709 ┼). (b
Bulk Migration of Ni/NiO in Ni-YSZ during Reducing Conditions...
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
of NiNiO in Ni-YSZ can potentially help to design a better solid oxide fuel cell (SOFC) anode. We have observed that extensive hydrogen reduction and methane steam reforming...
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for
Demir, Hilmi Volkan
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN
DYNAMICAL PROPERTIES OF Ni 2 MnGa DETERMINED FROM
Entel, P.
, Germany b Physics Department, Chelyabinsk State University, 454021 Chelyabinsk, Russia (Phase Transitions
A GINZBURG-LANDAU THEORY FOR Ni-Mn-Ga
Entel, P.
Tieftemperaturphysik, Gerhard-Mercator-Universit┬©at, 47048 Duisburg, Germany b Physics Department, Chelyabinsk State University, 454021 Chelyabinsk, Russia (Received ...) Abstract We present an effective Ginzburg-Landau theory
CoNiGa High Temperature Shape Memory Alloys
Dogan, Ebubekir
Shape memory alloys (SMAs) are an important class of smart materials that have the ability to remember a shape. Current practical uses of SMAs are limited to below 100 degrees C which is the limit for the transformation temperatures of most...
Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors
Ma, Xiao-Hua, E-mail: email@example.com, E-mail: email@example.com; Chen, Wei-Wei; Hou, Bin; Zhu, Jie-Jie [School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071 (China); Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China); Zhang, Kai; Zhang, Jin-Cheng; Zheng, Xue-Feng; Hao, Yue, E-mail: email@example.com, E-mail: firstname.lastname@example.com [Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)
Forward gate-bias stress experiments are performed to investigate the variation of trap states under Schottky contact in GaN-based high electron mobility transistors. Traps with activation energy E{sub T} ranging from 0.22?eV to 0.31?eV are detected at the gate-semiconductor interface by dynamic conductance technique. Trap density decreases prominently after stressing, particularly for traps with E{sub T}?>?0.24?eV. X-ray photoelectron spectroscopy measurements reveal a weaker Ga-O peak on the stressed semiconductor surface. It is postulated that oxygen is stripped by Ni to form NiO upon electrical stress, contributing to the decrease in O{sub N} donor sates under the gate contact.
Ni Ni: University of California - Los Angeles
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for Renewable Energy:Nanowire Solar541,9337,2April 2013 ESH&SNextNexus of EnergyNi
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Musolino, M., E-mail: email@example.com; Tahraoui, A.; Limbach, F.; Lõhnemann, J.; Jahn, U.; Brandt, O.; Geelhaar, L.; Riechert, H. [Paul-Drude-Institut f³r Festk÷rperelektronik, Hausvogteiplatz 5¢7, D-10117 Berlin (Germany)
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices fabricated with either Ni/Au or indium tin oxide (ITO) top contact. The NW-LEDs with ITO exhibit a number density of NWs emitting electroluminescence about ten times higher, significantly lower turn-on voltage and series resistance, and a relative external quantum efficiency more than one order of magnitude higher than the sample with Ni/Au. These results show that limitations in the performance of such devices reported so far can be overcome by improving the p-type top-contact.
Bulk Migration of Ni/NiO in Ni-YSZ during Reducing Conditions
Saraf, Laxmikant V.; Baer, Donald R.; Lea, Alan S.; Zhu, Zihua; Strohm, James J.; Sitzman, S. D.; King, David L.
Understanding the migration of Ni/NiO in Ni-YSZ can potentially help to design a better solid oxide fuel cell (SOFC) anode. We have observed that extensive hydrogen reduction and methane steam reforming of Ni-YSZ caused bulk migration of Ni/NiO to at least ~ 5 Ąm deeper from the Ni-YSZ surface. No significant bulk migration effects were detected after simple thermal treatments in non-reducing/non-reforming environment. Surface analysis of a single zirconia grain in the first 10-20 nm region from annealed, hydrogen reduced and methane steam reformed Ni-YSZ shows Ni-enriched surface supporting earlier claims of Ni exsolution. 3D-EBSD analysis of thermally treated sample before exposing it to reducing and reforming environment indicated mixed NiO/YSZ phase with some porosity and random grain orientation. The surface analysis and mapping were carried out using ToF-SIMS and AES whereas EDS maps on FIB sliced areas on Ni-YSZ were utilized for the bulk analysis. The results provide additional information related to complex reactions occurring in SOFC during internal reforming conditions.
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
Demir, Hilmi Volkan
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer
Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures
Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing
Ga nanoparticle-enhanced photoluminescence of GaAs
Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)
We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.
High temperature stable W and WSi{sub x} ohmic contacts on GaN and InGaN
Pearton, S.J.; Abernathy, C.R.; Durbha, A. [Florida Univ., Gainesville, FL (United States)] [and others
Conventional III-V metallizations chemes such as Au/Ge/Ni, Ti/Pt/Au, and Au/Be were found to display poor thermal stability on both GaN and InGaN, with extensive reaction and contact degradation at {le}500 C. By contrast, W was found to produce low contact resistance ({rho}{sub c}{similar_to}8x10{sup -5}{Omega}cm{sup 2}) to n-GaN. Ga outdiffusion to the surface of thin (500 A) W films was found after annealing at 1,100 C, but not at 1000 C. Interfacial abruptness increased by 300A after 1,100 C annealing. In the case of WSi{sub X} (X=0.45), Ga outdiffusion was absent even at 1,100 C, but again there was interfacial broadening and some phase changes in the WSi{sub X}. On In{sub 0.5}Ga{sub 0.5}N, a minimum specific contact resistivity of 1.5 x10{sup -5}{Omega}cm{sup 2} was obtained for WSi{sub X} annealed at 700 C. These contacts retained a smooth morphology and abrupt interfaces to 800 C. Graded In{sub X}Ga{sub 1-X}N layers have been employed on GaAs/AlGaAs HBTs (heterojunction bipolar transistors), replacing conventional In{sub X}Ga{sub 1-X}As layers. R{sub C} values of 5x10{sup -7}{Omega}cm{sup 2} were obtained for nonalloyed Ti/Pt/Au on the InGaN, and the morphologies were superior to those of InGaAs contact layers. This proves to have significant advantages for fabrication of sub-micron HBTs. Devices with emitter dimensions of 2x5{mu}m{sup 2} displayed gains of 35 for a base doping level of 7x10{sup 19}cm{sup -3} and stable long-term behavior.
AlGaN/GaN-based power semiconductor switches
Lu, Bin, Ph. D. Massachusetts Institute of Technology
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...
GaAs/InGaP/AlGaAs quantum-well infrared photodetectors
Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)
In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.
Large -Delayed Neutron Emission Probabilities in the 78Ni Region
Winger, J. A. [Mississippi State University (MSU); Rykaczewski, Krzysztof Piotr [ORNL; Gross, Carl J [ORNL; Grzywacz, Robert Kazimierz [ORNL; Shapira, Dan [ORNL
The -delayed neutron branching ratios (P n) for nuclei near doubly magic 78Ni have been directly measured using a new method combining high-resolution mass separation, reacceleration, and digital - spectroscopy of 238U fission products. The P n values for the very neutron-rich isotopes 76 78Cu and 83Ga were found to be much higher than previously reported and predicted. Revised calculations of the n process, accounting for new mass measurements and an inversion of the 2p3/2 and 1f5/2 orbitals, are in better agreement with these new experimental results.
N. Aoi; S. Kanno; S. Takeuchi; H. Suzuki; D. Bazin; M. D. Bowen; C. M. Campbell; J. M. Cook; D. -C. Dinca; A. Gade; T. Glasmacher; H. Iwasaki; T. Kubo; K. Kurita; T. Motobayashi; W. F. Mueller; T. Nakamura; H. Sakurai; M. Takashina; J. R. Terry; K. Yoneda; H. Zwahlen
The neutron-rich nucleus 74Ni was studied with inverse-kinematics inelastic proton scattering using a 74Ni radioactive beam incident on a liquid hydrogen targetat a center-of-mass energy of 80 MeV. From the measured de-excitation gamma-rays, the population of the first 2+ state was quantified. The angle-integrated excitation cross section was determined to be 14(4) mb. A deformation length of delta = 1.04(16) fm was extracted in comparison with distorted wave theory, which suggests that the enhancement of collectivity established for 70Ni continues up to 74Ni. A comparison with results of shell model and quasi-particle random phase approximation calculations indicates that the magic character of Z = 28 or N = 50 is weakened in 74Ni.
Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well
Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)
We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.
Bdlolo@omlIXmn ~ry E** UbmmrlOm mumoRY a C!EOPPIN Q.DA= O'KELLET F'10ri&~ tlbiwrd~ W IU~ N-MI hho~ GxmE A
Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs
Compositionally-graded InGaAsŁInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem
ISSN 0378-4738 = Water SA Vol. 27 No. 1 January 2001 71Available on website http://www.wrc.org.za Plant-soil interactions of sludge-borne heavy metals and the
://www.wrc.org.za Plant-soil interactions of sludge-borne heavy metals and the effect on maize (Zea mays L.) seedling 0002, South Africa Abstract The use of sewage sludge as an organic fertiliser under South African interpreted as total metal content is limiting the agricultural use of sludge. A glasshouse experiment, which
Structure, transport and thermal properties of UCoGa
Purwanto, A.; Robinson, R.A. [Los Alamos National Lab., NM (United States); Prokes, K. [Amsterdam Univ. (Netherlands). Van der Waals Lab.] [and others
By means of neutron powder diffraction, we find that UCoGa crystallizes in the hexagonal ZrNiAl structure and orders ferromagnetically at low temperatures with magnetic moments stacked along the c axis. The magnetic-ordering temperature is reflected in anomalies in the temperature dependencies of the electrical resistivity and the specific heat at Tc = 47 K. Furthermore, the strong anisotropy in the electrical resistivity for i {parallel} c and i {perpendicular} c indicates a significant contribution of the magnetic anisotropy to the electrical resistivity.
Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors
Pala, Nezih
Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect
Polarization-engineered GaN/InGaN/GaN tunnel diodes
Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.
Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators
Demir, Hilmi Volkan
Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three
Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1
Nabben, Reinhard
Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence
Influence of nuclear structure on sub-barrier hindrance in Ni+Ni fusion
C. L. Jiang; K. E. Rehm; R. V. F. Janssens; H. Esbensen; I. Ahmad; B. B. Back; P. Collon; C. N. Davids; J. P. Greene; D. J. Henderson; G. Mukherjee; R. C. Pardo; M. Paul; T. O. Pennington; D. Seweryniak; S. Sinha; Z. Zhou
Fusion-evaporation cross sections for $^{64}$Ni+$^{64}$Ni have been measured down to the 10 nb level. For fusion between two open-shell nuclei, this is the first observation of a maximum in the $S$-factor, which signals a strong sub-barrier hindrance. A comparison with the $^{58}$Ni+$^{58}$Ni, $^{58}$Ni+$^{60}$Ni, and $^{58}$Ni+$^{64}$Ni systems indicates a strong dependence of the energy where the hindrance occurs on the stiffness of the interacting nuclei.
Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers
Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: firstname.lastname@example.com [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.
Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers
Keogh, David Martin
T. Henderson, ōHigh- Speed InGaP/GaAs HBTÆs Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite
Investigation of the GaN-on-GaAs interface for vertical power device applications
M÷reke, Janina, E-mail: firstname.lastname@example.com; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)
GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.
Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta
Svane, Axel Torstein
69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure
Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions
Feenstra, Randall
1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region
Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs
del Alamo, Jes·s A.
Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA firstname.lastname@example.com; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High
Li, Yat
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN
Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.
We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...
Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets
Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.
Infrared diode laser spectroscopy of jet-cooled NiCO, Ni,,CO...3,,13 and Ni,,CO...3,,C18
Morse, Michael D.
Infrared diode laser spectroscopy of jet-cooled NiCO, Ni,,CO...3,,13 CO..., and Ni,,CO...3,,C18 O infrared spectroscopic investigations of the CO vibration of jet-cooled NiCO, Ni CO 3 13 CO , and Ni CO 3 C diode laser spectrometer. The rotationally resolved spectrum of NiCO was collected as it was formed
Microstructural Characterization and Shape Memory Response of Ni-Rich NiTiHf and NiTiZr High Temperature Shape Memory Alloys
Evirgen, Alper
NiTiHf and NiTiZr high temperature shape memory alloys (HTSMAs) have drawn a great deal of attention as cheaper alternatives to Pt, Pd and Au alloyed NiTi-based HTSMAs while NiTiZr alloys also providing at least 20% weight reduction then its Ni...
Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system
Coldren, Larry A.
Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. ® 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
Afroz Faria, Faiza; Guo Jia; Zhao Pei; Li Guowang; Kumar Kandaswamy, Prem; Wistey, Mark; Xing Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)
Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n{sup +} metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R{sub C}) and sheet resistance (R{sub sh}) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R{sub C} values (<0.09 {Omega} mm) were obtained, with a minimum R{sub C} of 0.035 {Omega} mm on a sample with a room temperature carrier concentration of {approx}5 Multiplication-Sign 10{sup 19} cm{sup -3}. Based on the systematic study, the role of R{sub C} and R{sub sh} is discussed in the context of regrown n{sup +} GaN ohmic contacts for GaN based high electron mobility transistors.
Red emitting photonic devices using InGaP/InGaAlP material system
Kangude, Yamini
In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...
Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors
Florida, University of
energy loss spectroscopy [23]. In contrast, HEMTs utilizing a Pt liner layer did not show the same gate electrical contact to the 2DEG. However, when stressing occurs in O2 or air, the O2 present reacts
AlGaAs/InGaAs/AlGaAs Double Barrier
Perera, A. G. Unil
-state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due
Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam
Uedono, Akira, E-mail: firstname.lastname@example.com; Yoshihara, Nakaaki [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Fujishima, Tatsuya; Piedra, Daniel; Palacios, Tomßs [Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307 (United States); Ishibashi, Shoji [Nanosystem Research Institute ōRICS,ö National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan); Sumiya, Masatomo [Wide Bandgap Material Group, National Institute for Materials Science, Tsukuba 305-0044 (Japan); Laboutin, Oleg; Johnson, Wayne [IQE, 200 John Hancock Road, Taunton, Massachusetts 01581 (United States)
Vacancy-type defects near interfaces between metal contacts and GaN grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for Ti-deposited GaN showed that optically active vacancy-type defects were introduced below the Ti/GaN interface after annealing at 800?░C. Charge transition of those defects due to electron capture was observed and was found to correlate with a yellow band in the photoluminescence spectrum. The major defect species was identified as vacancy clusters such as three to five Ga-vacancies coupled with multiple nitrogen-vacancies. The annealing behaviors of vacancy-type defects in Ti-, Ni-, and Pt-deposited GaN were also examined.
Composition and Interface Analysis of InGaN/GaN Multiquantum...
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Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...
GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study
Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)
The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.
Imaging Chemical Aggregation of Ni/NiO Particles from Reduced...
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from Reduced NiO-YSZ. Abstract: Energy dispersive X-ray spectroscopy (EDS) mapping of nickel oxide yttria-stabilized zirconia (NiO-YSZ) was carried out after various hydrogen...
PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS
McCluskey, Matthew
-Ąm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-Ąm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied
Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1
As, Donat Josef
) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN
InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker
Woodall, Jerry M.
InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1Ł4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single
InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor
Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)
We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.
InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor
Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.
The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.
Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes
Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul, E-mail: firstname.lastname@example.com [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Yoo, Hyobin; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)
We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal¢organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1¢x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.
Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction
Sirenko, Andrei
Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced
GaN0.011P0.989¢GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates
Tu, Charles W
and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)
Youngblood, David H.; Lui, YW.
PHYSICAL REVIEW C VOLUME 44, NUMBER 5 Monopole strength in Ni NOVEMBER 1991 D. H. Youngblood and Y.-W. Lui Cyclotron Institute, Texas AdkM Uni Uersi ty, College Station, Texas 77843 (Received 20 June 1991) Differential cross-section data from... strength is locat- ed nearer the quadrupole (for Ca [3] and Si [4] at vir- tually the same energy). Only two reports of substantial strength in lighter nuclei are in the literature. Lui et al. [4] reported 66%%uo of the EO energy-weighted sum rule...
AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor
Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.
The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.
Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures
Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.
Superior radiation-resistant properties of InGaP/GaAs tandem solar cells
Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)
The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}
anketo chosa ni: Topics by E-print Network
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Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...
anteisei ni kansuru: Topics by E-print Network
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...
atsumitsu katei ni: Topics by E-print Network
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Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...
arikata ni kansuru: Topics by E-print Network
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...
ataeru eikyo ni: Topics by E-print Network
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...
aisorui ni taisuru: Topics by E-print Network
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...
anzensei ni kansuru: Topics by E-print Network
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Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...
Electrodeposited NiCo/Cu Superlattices
Safak, M.; Alper, M. [Department of Physics, Faculty of Science and Literature, University of Uludag, Goeruekle, Bursa (Turkey)
NiCo/Cu superlattices were electrodeposited on polycrystalline Cu substrates from a single electrolyte under potentiostatic control. The X-ray diffraction (XRD) patterns showed that NiCo/Cu superlattices have the same crystal structure and texture as in their substrates. The films exhibited giant magnetoresistance (GMR) or anisotropic magnetoresistance (AMR), depending on the Cu layer thicknesses.
Nanoscale structural heterogeneity in Ni-rich half-Heusler TiNiSn
Douglas, Jason E., E-mail: firstname.lastname@example.com; Pollock, Tresa M. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Materials Research Laboratory, University of California, Santa Barbara, California 93106 (United States); Chater, Philip A. [Diamond Light Source, Chilton, Oxfordshire OX11 0DE (United Kingdom); Brown, Craig M. [Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Department of Chemical Engineering, University of Delaware, Newark, Delaware 19716 (United States); Seshadri, Ram [Materials Department, University of California, Santa Barbara, California 93106 (United States); Materials Research Laboratory, University of California, Santa Barbara, California 93106 (United States); Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106 (United States)
The structural implications of excess Ni in the TiNiSn half-Heusler compound are examined through a combination of synchrotron x-ray and neutron scattering studies, in conjunction with first principles density functional theory calculations on supercells. Despite the phase diagram suggesting that TiNiSn is a line compound with no solid solution, for small x in TiNi{sub 1+x}Sn there is indeed an appearanceŚfrom careful analysis of the scatteringŚof some solubility, with the excess Ni occupying the interstitial tetrahedral site in the half-Heusler structure. The analysis performed here would point to the excess Ni not being statistically distributed, but rather occurring as coherent nanoclusters. First principles calculations of energetics, carried out using supercells, support a scenario of Ni interstitials clustering, rather than a statistical distribution.
Purification and Characterization of [NiFe]-Hydrogenase of Shewanella...
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Purification and Characterization of NiFe-Hydrogenase of Shewanella oneidensis MR-1. Purification and Characterization of NiFe-Hydrogenase of Shewanella oneidensis MR-1....
al ni shape: Topics by E-print Network
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NiAl NANOLAMINATES . Open Access Theses and Dissertations Summary: ??To characterize the self-propagating, high-temperature exothermic alloying reactions of NiAl nanoscaled...
Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.
from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...
GaN nanowires show more 3D piezoelectricity than bulk GaN
Espinosa, Horacio D.
Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic
Self-aligned AlGaN/GaN transistors for sub-mm wave applications
Saadat, Omair I
This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...
Invited Paper GaN HEMT reliability
del Alamo, Jes·s A.
Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier
New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems
Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.
GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.
InAs=InGaP=GaAs heterojunction power Schottky rectifiers
Woodall, Jerry M.
InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier
Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs
York, Robert A.
Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN
Role of strain in polarization switching in semipolar InGaN/GaN quantum wells
Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112┬»2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd┬ŁScuseria┬Ł Ernzerhof
GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges
Perera, A. G. Unil
GaN/AlGaN heterojunction infrared detector responding in 8Ł14 and 20Ł70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1sŁ2p▒ transition of Si donors in GaN
Enthalpy of mixing of liquid Ni-Zr and Cu-Ni-Zr alloys
Witusiewicz, V.T.; Sommer, F.
Since the Al-Cu-Ni-Zr system is a basis for the production of bulk amorphous materials by rapid solidification techniques from the liquid state, it is of great scientific interest to determine the partial and the integral thermodynamic functions of liquid and undercooled liquid alloys. Such data, as was pointed out previously, are important in order to understand their extremely good glass-forming ability in multicomponent metallic systems as well as for processing improvements. In order to measure the thermodynamic properties of the Al-Cu-Ni-Zr quaternary, it is necessary to have reliable thermochemical data for its constituent canaries and ternaries first. In a series of articles, the authors have reported in detail the thermodynamic properties of liquid Al-Cu, Al-Ni, Cu-Ni, Cu-Zr, Al-Zr, Al-Cu-Ni, and Al-Cu-Zr alloys. This article deals with the direct calorimetric measurements of the partial and the integral enthalpies of mixing of liquid Ni-Zr and Cu-Ni-Zr alloys and the heat capacity of liquid Ni{sub 26}Zr{sub 74}. In a subsequent article, the authors will present similar data for the liquid ternary Al-Ni-Zr and for the liquid quaternary Al-Cu-Ni-Zr alloys.
Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability
Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL
AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)
Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.
Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy
Feenstra, Randall
1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources
AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN
York, Robert A.
AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN
AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate
York, Robert A.
AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field
In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a
Yang, Kyounghoon
205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN
A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach
Itoh, Tatsuo
A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate
Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,
Boyer, Edmond
Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR
Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)
Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.
Acoustic assisted actuation of Ni-Mn-Ga ferromagnetic shape memory alloys
Peterson, Bradley William
Ferromagnetic shape memory alloys (FSMA) have been shown in recent work to exhibit large magnetic field induced strains. The material generally requires a large threshold field (of order 3-4 kOe) to initiate the strain. ...
Computational Thermodynamics of CoNiGa High Temperature Shape Memory AlloysĀ
Chari, Arpita
for the present work. In this work, a thermodynamic model of the ternary system is calculated based on the CALPHAD approach, to investigate the thermodynamic properties, phase stability and shape memory properties of these alloys. The CALPHAD approach is a...
Structural and Dynamical Fluctuations in Off-Stoichiometric NiMnGa Shape-Memory Alloys
Barabash, Rozaliya [ORNL] [ORNL; Barabash, Oleg M [ORNL] [ORNL; Karapetrova, Evgenia [University of Illinois, Urbana-Champaign] [University of Illinois, Urbana-Champaign; Manley, Michael E [ORNL] [ORNL
3D diffuse scattering dataset in the temperature region of the existence of high temperature cubic L21 phase reveals localized intensity maxima related to phason modes. Peierls instability induced tetragonal distortions in the pre-martensitic phase cause strong diffuse scattering. Around (H0H) reflections diffuse scattering is strongly compressed along the [H0H] and enhanced along the [-H0H] direction.
Magnetocaloric effect in Ni-Mn-Ga thin films under concurrent magnetostructural and Curie transitions
Niewczas, Marek
refrigeration applications where low magnetic fields are favorable. VC 2011 American Institute of Physics. [doi in the magnetic refrigerant element, a material system exhibiting a large entropy change is highly advantageous to magnetic refrigeration technologies. An entropy change can be induced in magnetic refriger- ant materials
Structure and magnetic properties of CeŌéā(Ni/Al/Ga)ŌéüŌéü-A new phase
Office of Scientific and Technical Information (OSTI)
AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem Not FoundInformation DOEInformation Summary Big* - ' E 1 1"Stability
Structure and magnetic properties of Ce?(Ni/Al/Ga)??-A new phase with the
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del SolStrengthening a solid ... Strengthening a solidRadiationStructure
Structure and magnetic properties of CeŌéā(Ni/Al/Ga)ŌéüŌéü-A new phase
Office of Scientific and Technical Information (OSTI)
AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy, science,SpeedingWu, Stephen G" Name Name ORCIDand
Thermal diffusion in Ni/Al multilayer
Swain, M.; Bhattacharya, D.; Singh, S.; Basu, S. [Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Gupta, M. [UGC-DAE-Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)
Two Ni/Al multilayers deposited by ion beam sputtering of nominal design [Ni(200A)/Al(100A)] Multiplication-Sign 5 and [Ni(50A)/Al(227A)] Multiplication-Sign 5 on Si substrates were annealed at 200 Degree-Sign C. As-deposited and annealed samples were characterized by x-ray diffraction (XRD) and x-ray reflectometry (XRR). The effort was to study the path of alloying in the above two multilayers of same elements but of opposite stoichiometric ratio. We find distinct differences in alloying of these samples.
High efficiency InGaP solar cells for InGaP/GaAs tandem cell application
Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.
In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.
Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation
Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP
AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates
Manfra, Michael J.
PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth
ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors
MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown
Green light emission by InGaN/GaN multiple-quantum-well microdisks
Hsu, Yu-Chi; Lo, Ikai, E-mail: firstname.lastname@example.com; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)
The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.
InGaAsN/GaAs heterojunction for multi-junction solar cells
Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)
An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0
Metastable phase diagram for Ni-implanted Al and pulse surface melted Al(Ni)
Follstaedt, D.M.; Picraux, S.T.
The microstructure of <110> Al implanted with Ni was examined before and after subsequent electron beam pulsed surface melting (65 ns, 1.7 J/cm/sup 2/). Both processes were done with the Al substrate at room temperature. Implantation at several energies (160 to 15 keV) into a given sample produced a nearly constant measured Ni concentration through a approx. 0.1 ..mu..m region below the surface (7). Such samples with concentrations from 8 to 25 at. % Ni were examined, along with a sample with a peak concentration of 32 at. % Ni.
Layering and temperature-dependent magnetization and anisotropy of naturally produced Ni/NiO multilayers
Pappas, S. D.; Trachylis, D.; Velgakis, M. J. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Kapaklis, V.; Joensson, P. E.; Papaioannou, E. Th. [Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala (Sweden); Delimitis, A. [Chemical Process Engineering Research Institute (CPERI), Centre for Research and Technology Hellas (CERTH), 57001 Thermi, Thessaloniki (Greece); Poulopoulos, P. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Materials Science Department, University of Patras, 26504 Patras (Greece); Fumagalli, P. [Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Politis, C. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)
Ni/NiO multilayers were grown by magnetron sputtering at room temperature, with the aid of the natural oxidation procedure. That is, at the end of the deposition of each single Ni layer, air is let to flow into the vacuum chamber through a leak valve. Then, a very thin NiO layer ({approx}1.2 nm) is formed. Simulated x-ray reflectivity patterns reveal that layering is excellent for individual Ni-layer thickness larger than 2.5 nm, which is attributed to the intercalation of amorphous NiO between the polycrystalline Ni layers. The magnetization of the films, measured at temperatures 5-300 K, has almost bulk-like value, whereas the films exhibit a trend to perpendicular magnetic anisotropy (PMA) with an unusual significant positive interface anisotropy contribution, which presents a weak temperature dependence. The power-law behavior of the multilayers indicates a non-negligible contribution of higher order anisotropies in the uniaxial anisotropy. Bloch-law fittings for the temperature dependence of the magnetization in the spin-wave regime show that the magnetization in the multilayers decreases faster as a function of temperature than the one of bulk Ni. Finally, when the individual Ni-layer thickness decreases below 2 nm, the multilayer stacking vanishes, resulting in a dramatic decrease of the interface magnetic anisotropy and consequently in a decrease of the perpendicular magnetic anisotropy.
Electroslag surfacing of steel shafting with Ni alloy 625 and 70Cu-30Ni strip
Devletian, J.H.; Gao, Y.P.; Wood, W.E. [Oregon Graduate Inst. of Science and Technology, Portland, OR (United States)
A comprehensive study of electroslag surfacing (ESS) of steel with Ni Alloy 625 and 70Cu-30Ni strip electrodes was conducted to establish the feasibility of replacing forged bearing sleeves on propulsion shafting with integral weld surfacing. The base material was MIL-S-23284, Class 1 steel in the form of 41--66 cm (16--26 in.) diameter shafting and 76 mm (3 in.) thick flat plate. All ESS was carried out at a heat input level of approximately 5.9kJ/mm (150 kJ/in.) using 30 x 0.5 mm (1.2 x 0.02 in.) strip electrodes. Assessments of mechanical properties and microstructure of Ni Alloy 625 surfacing and 70Cu-30Ni surfacing were conducted to establish the structure-property relationships in these complex alloy systems. In addition, a solidification cracking test was developed to determine the relative cracking susceptibilities of these strip surfacing alloys. Although the Ni Alloy 625 surfacing contained small islands of interdendritic MC type carbides and Laves phase, the mechanical properties of this surfacing were satisfactory. The 70Cu-30Ni surfacing required a buttering layer of 30Cu-70Ni or pure Ni to prevent solidification cracking. The inherent ductility-dip sensitivity of 70Cu-30Ni surfacing was overcome by the development of a suitable ESS procedure.
Giant Quadrupole-Resonance in Ni Isotopes
Youngblood, David H.; Lui, YW; Garg, U.; Peterson, R. J.
PHYSICAL REVIEW C VOLUME 45, NUMBER 5 MAY 1992 Giant quadrupole resonance in Ni isotopes D. H. Youngblood and Y.-%. Lui Texas A&M UniUersity, College Station, Texas 77843 U. Garg University of Notre Dame, South Bend, Indiana 46556 R. J...R )' 0.53 0.68 0.69 0.78 E2 EWSR (%) 58+12 76+14 78+14 90+16 Cp 0.80+0.04 0.84+0.04 0.82+0. 12 1.05+0. 10 2174 YOUNGBLOOD, LUI, GARG, AND PETERSON 45 1000 100 60Ni(n, n') E = 129 MeV 1 000 100 58Ni(n, n') 10 10 100 z' 1000 64Ni...
InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells
Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others
Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.
Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures
Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: firstname.lastname@example.com [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)
The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)
We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.
A Resistive-Gate InAlAs/InGaAs/InP2DEG CCD D.V. Rossi, A.-N. Chengl, H.H. Wiederl, and E.R. Fossurn2
Fossum, Eric R.
GaAs cap layer and recess of the InAlAs layer was performed using the AuGeNi contacts as a mask and H2S04:H thermal annealing at 4OO0C for 15 sec under a forming gas ambient, and the subsequent removal of the In
Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells
Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.
The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.
September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer
Pala, Nezih
0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 Ł Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN
Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen
York, Robert A.
Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X
Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells
Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial pŁiŁn multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1└x N/GaN undoped QW system is coated over both
High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors
Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)
The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.
Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates
Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we
Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method
Okamoto, Koichi
Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized
N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
Chung, Jinwook
We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...
Development and Industrialization of InGaN/GaN LEDs on Patterned...
Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site
of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...
Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
Lu, Bin
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...
Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA
McGaughey, Alan
Industrial Design ┬Ł Shanghai, China Eaton Corporation ┬Ł Pittsburgh, PA CMU, CTTEC ┬Ł PittsburghSiemens ┬Ł Pittsburgh, PA Novelis Corporation ┬Ł Atlanta, GA Expense
Electronic circuits having NiAl and Ni.sub.3 Al substrates
Deevi, Seetharama C. (Midlothian, VA); Sikka, Vinod K. (Oak Ridge, TN)
An electronic circuit component having improved mechanical properties and thermal conductivity comprises NiAl and/or Ni.sub.3 Al, upon which an alumina layer is formed prior to applying the conductive elements. Additional layers of copper-aluminum alloy or copper further improve mechanical strength and thermal conductivity.
nucl-ex/970400924Apr1997 Charged pions from Ni on Ni collisions
Boyer, Edmond
, Poland 11 Rudjer Boskovic Institute, Zagreb, Croatia 1 #12;Abstract Charged pions from Ni + Ni reactions number of participants increase with beam energy, in accordance with earlier studies of the Ar + KCl and La + La systems. The pion kinetic energy spectra have concave shape and are fitted
Strain-balanced InGaN/GaN multiple quantum wells
Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN ōstrain-balancedö multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the ōgreen gap.ö.
High current gain InGaN=GaN HBTs with C operating temperature
Asbeck, Peter M.
with an $20 nm low-temperature (Tg ╝ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cm└3 Buffer GaN 2.5 mm Ł Substrate Sapphire Ł Ł HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung
Ni Sorption on Pyrophyllite: Evidence for the Formation of Ni-Al Hydroxide and Its Transformation into Ni-Silicate by Visible,
Sparks, Donald L.
into Ni-Silicate by Visible, Infrared and XANES Spectroscopy and Thermogravimetry A. C. Scheinost, R. G suggest either the formation of layered double hydroxides or of layer silicates. Desorption studies polymerization of SiO causes the formation of 1:1 or 2:1 Ni silicates, where the original Ni-Al hydroxide
Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators
Weinstein, Dana
This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...
Spontaneous emission in GaN/InGaN photonic crystal nanopillars
Boyer, Edmond
. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators
Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.
We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.
Recycling of used Ni-MH rechargeable batteries
Yoshida, T.; Ono, H.; Shirai, R. [Mitsui Mining and Smelting Co., Ltd., Ageo, Saitama (Japan). Corporate R and D Center
The Ni-MH (nickel metal hydride) rechargeable battery was developed several years ago. Its higher electrochemical capacity and greater safety compared with the Ni-Cd rechargeable battery have resulted in very rapid increase in its production. The Ni-MH rechargeable battery consists of Ni, Co and rare earth metals, so that recycling is important to recover these valuable mineral resources. In this study, a basic recycling process for used Ni-MH rechargeable batteries has been developed, in which the Ni, Co and rare earth elements are recovered through a combination of mechanical processing and hydrometallurgical processing.
Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content
Kleinerman, Nadezhda M., E-mail: email@example.com; Serikov, Vadim V., E-mail: email@example.com; Vershinin, Aleksandr V., E-mail: firstname.lastname@example.com; Mushnikov, Nikolai V., E-mail: email@example.com; Stashkova, Liudmila A., E-mail: email@example.com [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)
Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe M÷ssbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of M÷ssbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)
TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer
Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL
It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.
Nickel recovery from electronic waste II Electrodeposition of Ni and Ni¢Fe alloys from diluted sulfate solutions
Robotin, B. [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania); Ispas, A. [Fachgebiet Elektrochemie und Galvanotechnik II, Technische Universitõt Ilmenau, D-98693 Ilmenau (Germany); Coman, V. [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania); Bund, A. [Fachgebiet Elektrochemie und Galvanotechnik II, Technische Universitõt Ilmenau, D-98693 Ilmenau (Germany); Ilea, P., E-mail: firstname.lastname@example.com [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania)
Highlights: Ģ Ni can be recovered from EG wastes as pure Ni or as Ni¢Fe alloys. Ģ The control of the experimental conditions gives a certain alloy composition. Ģ Unusual deposits morphology shows different nucleation mechanisms for Ni vs Fe. Ģ The nucleation mechanism was progressive for Ni and instantaneous for Fe and Ni¢Fe. - Abstract: This study focuses on the electrodeposition of Ni and Ni¢Fe alloys from synthetic solutions similar to those obtained by the dissolution of electron gun (an electrical component of cathode ray tubes) waste. The influence of various parameters (pH, electrolyte composition, Ni{sup 2+}/Fe{sup 2+} ratio, current density) on the electrodeposition process was investigated. Scanning electron microscopy (SEM) and X-ray fluorescence analysis (XRFA) were used to provide information about the obtained depositsÆ thickness, morphology, and elemental composition. By controlling the experimental parameters, the composition of the Ni¢Fe alloys can be tailored towards specific applications. Complementarily, the differences in the nucleation mechanisms for Ni, Fe and Ni¢Fe deposition from sulfate solutions have been evaluated and discussed using cyclic voltammetry and potential step chronoamperometry. The obtained results suggest a progressive nucleation mechanism for Ni, while for Fe and Ni¢Fe, the obtained data points are best fitted to an instantaneous nucleation model.
Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots
Fonoberov, Vladimir
Excitonic properties of strained wurtzite and zinc-blende GaNšAlxGa1└xN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1Ł8 Molecu- lar beam epitaxial growth in the StranskiŁKrastanov mode of wurtzite WZ Ga
Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices
Feenstra, Randall
Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP
Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1
Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have
Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates
Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2Ł0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication
Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra
Feenstra, Randall
1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap
Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1
Dietz, Nikolaus
Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C
High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop
Itoh, Tatsuo
High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies
Exchange bias beyond the superparamagnetic blocking temperature of the antiferromagnet in a Ni-NiO nanoparticulate system
Roy, Aparna, E-mail: email@example.com, E-mail: email@example.com; Ferreira, J. M. F. [Department of Materials and Ceramics Engineering and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); De Toro, J. A.; Muniz, P.; Riveiro, J. M. [Departamento de Fisica Aplicada, Universidad de Castilla-La Mancha, 13071 Ciudad Real (Spain); Amaral, V. S. [Department of Physics and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal)
We report magnetic and exchange bias studies on Ni-NiO nanoparticulate systems synthesized by a two-step process, namely, chemical reduction of a Ni salt followed by air annealing of the dried precipitate in the temperature range 400¢550?░C. Size of Ni and NiO crystallites as estimated from X¢ray diffraction line broadening ranges between 10.5¢13.5?nm and 2.3¢4?nm, respectively. The magneto-thermal plots (M-T) of these bi-magnetic samples show a well developed peak in the vicinity of 130?K. This has been identified as the superparamagnetic blocking temperature ōT{sub B}ö of NiO. Interestingly, all samples exhibit exchange bias even above their respective NiO blocking temperatures, right up to 300?K, the maximum temperature of measurement. This is in contrast to previous reports since exchange bias requires the antiferromagnetic NiO to have a stable direction of its moment in order to pin the ferromagnet (Ni) magnetization, whereas such stability is unlikely above T{sub B} since the NiO is superparamagnetic, its moment flipping under thermal activation. Our observation is elucidated by taking into account the core-shell morphology of the Ni-NiO nanoparticles whereby clustering of some of these nanoparticles connects their NiO shells to form extended continuous regions of NiO, which because of their large size remain blocked at T?>?T{sub B}, with thermally stable spins capable of pinning the Ni cores and giving rise to exchange bias. The investigated samples may thus be envisaged as being constituted of both isolated core-shell Ni-NiO nanoparticles as well as clustered ones, with T{sub B} denoting the blocking temperature of the NiO shell of the isolated particles.
Slovene as a Foreign Language: The Pilot Learner Corpus Perspective
Stritar, Mojca
¢145. Ili?, Milena, Kalin, Katja, Povhe, Janja, Razpotnik, Barica, Ŗter, Darja, ÄnidarÜi?, Tina. 2008. Prebivalstvo. Statisti?ni letopis Republike Slovenije. Ljubljana: Za- vod Republike Slovenije za statistiko: 72¢101. Izumi, Emi, Uchimoto, Kiyotaka...
Impact ionization in N-polar AlGaN/GaN high electron mobility transistors
Killat, N., E-mail: firstname.lastname@example.com, E-mail: firstname.lastname@example.com; Uren, M. J.; Kuball, M., E-mail: email@example.com, E-mail: firstname.lastname@example.com [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)
The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.
Michael J. Poston Atlanta, GA 30307
Orlando, Thomas
Page | 1 Michael J. Poston Atlanta, GA 30307 email@example.com Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR Ł Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J
Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor
Peale, Robert E.
of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored
FUPWG Meeting Agenda - Atlanta, GA | Department of Energy
Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site
Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...
AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering
Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: firstname.lastname@example.com [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)
GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?ū?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.
56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs
Haller, Gary L.
56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency
Structure Analysis of a Precipitate Phase in an Ni-Rich High...
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
Structure Analysis of a Precipitate Phase in an Ni-Rich High Temperature NiTiHf Shape Memory Alloy. Structure Analysis of a Precipitate Phase in an Ni-Rich High Temperature NiTiHf...
Preparation of PtNi Nanoparticles for the Electrocatalytic Oxidation of Methanol
Deivaraj, T.C.
Carbon supported PtNi nanoparticles were prepared by hydrazine reduction of Pt and Ni precursor salts under different conditions, namely by conventional heating (PtNi-1), by prolonged reaction at room temperature (PtNi-2) ...
Rare-earth transition-metal gallium chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se)
Rudyk, Brent W.; Stoyko, Stanislav S.; Oliynyk, Anton O.; Mar, Arthur, E-mail: email@example.com
Six series of quaternary rare-earth transition-metal chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se), comprising 33 compounds in total, have been prepared by reactions of the elements at 1050 ░C (for the sulphides) or 900 ░C (for the selenides). They adopt noncentrosymmetric hexagonal structures (ordered Ce{sub 3}Al{sub 1.67}S{sub 7}-type, space group P6{sub 3}, Z=2) with cell parameters in the ranges of a=9.5¢10.2 ┼ and c=6.0¢6.1 ┼ for the sulphides and a=10.0¢10.5 ┼ and c=6.3¢6.4 ┼ for the selenides as refined from powder X-ray diffraction data. Single-crystal structures were determined for five members of the sulphide series RE{sub 3}FeGaS{sub 7} (RE=La, Pr, Tb) and RE{sub 3}CoGaS{sub 7} (RE=La, Tb). The highly anisotropic crystal structures consist of one-dimensional chains of M-centred face-sharing octahedra and stacks of Ga-centred tetrahedra all pointing in the same direction. Magnetic measurements on the sulphides reveal paramagnetic behaviour in some cases and long-range antiferromagnetic behaviour with low Nķel temperatures (15 K or lower) in others. Ga L-edge XANES spectra support the presence of highly cationic Ga tetrahedral centres with a tendency towards more covalent Ga¢Ch character on proceeding from the sulphides to the selenides. Band structure calculations on La{sub 3}FeGaS{sub 7} indicate that the electronic structure is dominated by Fe 3d-based states near the Fermi level. - Graphical abstract: The series of chalcogenides RE{sub 3}MGaS{sub 7}, which form for a wide range of rare-earth and transition metals (M=Fe, Co, Ni), adopt highly anisotropic structures containing chains of M-centred octahedra and stacks of Ga-centred tetrahedra. Display Omitted - Highlights: Ģ Six series (comprising 33 compounds) of chalcogenides RE{sub 3}MGaCh{sub 7} were prepared. Ģ They adopt noncentrosymmetric hexagonal structures with high anisotropy. Ģ Most compounds are paramagnetic; some show antiferromagnetic ordering. Ģ Ga L-edge XANES confirms presence of cationic Ga species.
Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers
Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.
Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi
Carbon Nanotube Growth Using Ni Catalyst in Different Layouts
Nguyen, H. Q.
Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated on silicon substrates ...
ag fe ni: Topics by E-print Network
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
conduction-band states of NiO 100 thin films grown onto Ag 100 have charac- terized NiO monocrystalline thin films has shown up both onto insulating i.e., MgO, Ref. 21 Marcon,...
Fabrication and temperature-dependent magnetic properties of one-dimensional multilayer Au¢Ni¢Au¢Ni¢Au nanowires
Ishrat, S. [School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Maaz, K. [School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, Islamabad (Pakistan); Lee, Kyu-Joon [Department of Physics, Sogang University, Seoul 121-742 (Korea, Republic of); Jung, Myung-Hwa, E-mail: email@example.com [Department of Physics, Sogang University, Seoul 121-742 (Korea, Republic of); Kim, Gil-Ho, E-mail: email@example.com [School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Multilayer Au¢Ni¢Au¢Ni¢Au nanowires with a controlled diameter of ?100 nm were synthesized by electrochemical deposition in porous alumina templates. The length of each Ni-segment was controlled up to ?230 nm, while the length of the Au segment sandwiched between two Ni segments was ?180 nm. X-ray diffraction patterns and energy-dispersive X-ray spectra confirmed the formation of purely crystalline nanowires. The magnetic properties of the multilayer Au¢Ni¢Au¢Ni¢Au nanowires were investigated in the temperature range 2¢300 K. Room-temperature magnetic hysteresis confirmed the ferromagnetic nature of the nanowires. The plot of coercivity as a function of temperature (from 2 to 300 K) followed law applicable for ferromagnetic nanostructures. The magnetization tended to increase as the temperature decreased, following the modified Bloch's law similar to ferromagnetic nanoparticles. - Graphical abstract: (a) SEM image of Au¢Ni¢Au¢Ni¢Au nanowire with 230 nm Ni segment length and 180 nm Au sandwiched between Ni segments (b) Kneller's law (c) Bloch's law Display Omitted - Highlights: Ģ Electrochemical fabrication of Au¢Ni¢Au¢Ni¢Au nanowires in alumina templates. Ģ Formation of beadlike structure of Ni segments. Ģ Coercivity versus T follows Kneller's law for ferromagnetic materials. Ģ Magnetization as a function of temperature follows the modified Bloch's law.
Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well
Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: firstname.lastname@example.com [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)
The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.
AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh
Itoh, Tatsuo
AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: firstname.lastname@example.com Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d
Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN
Nabben, Reinhard
Microcalorimetric measurements of small absorption coefficients have been performed on thin GaNŁAlGaN quantum wells in GaNŁAlGaN quantum wells Axel Go©ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily
Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors
Dietz, Nikolaus
substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors
Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs
Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others
This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.
High Temperature coatings based on {beta}-NiAI
Severs, Kevin
High temperature alloys are reviewed, focusing on current superalloys and their coatings. The synthesis, characerization, and oxidation performance of a NiAl¢TiB{sub 2} composite are explained. A novel coating process for Mo¢Ni¢Al alloys for improved oxidation performance is examined. The cyclic oxidation performance of coated and uncoated Mo¢Ni¢Al alloys is discussed.
Structural and optical properties of InGaN¢GaN nanowire heterostructures grown by molecular beam epitaxy
DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)
Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J³lich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J³lich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J³lich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J³lich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J³lich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)
InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.
Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy
in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using
High-efficiency radiation-resistant InGaP/GaAs tandem solar cells
Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)
A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.
Three-Dimensional EBSD Analysis of YSZ, NiO-YSZ and Ni-Alloy
Saraf, Laxmikant V.
In this report, a method is discussed to perform successive milling on yttria-stabilized zirconia (YSZ), NiO-YSZ and Ni-alloy at the intervals of 85 nm 50 nm and 100 nm, respectively using a focused ion beam (FIB) followed by electron backscatter diffraction (EBSD) analysis on each slice. The EBSD data is then reconstructed to generate 3D volume. The 3D-EBSD band quality data is superimposed on inverse pole figure (IPF) grain orientation analysis to get a correlation with quality of band indexing. For the NiO-YSZ case, grain orientations and band quality factors were matched for grains {approx}250 nm diameters producing a high resolution 3D-EBSD data. For this case, a pore space in 3D volume was visible due to nanocrystalline NiO-YSZ grain network. The advantages of 3D EBSD are discussed in the context of its applications to SOFC research community.
Magnetic Properties of Monodisperse NiHx Nanoparticles and Comparison to Those of Monodisperse Ni Nanoparticles
Kim, Bongsoo
for hydrogen storage for both fuel cells and electrodes in batteries.3-7 As a solid, NiHx has an advantage over Yongmin Chang Department of Diagnostic Radiology, School of Medicine, Kyungpook National Uni
Geometric structures of thin film: Pt on Pd(110) and NiO on Ni(100)
Warren, O.L.
This thesis is divided into 3 papers: dynamical low-energy electron- diffraction investigation of lateral displacements in topmost layer of Pd(110); determination of (1{times}1) and (1{times}2) structures of Pt thin films on Pd(110) by dynamical low-energy electron-diffraction analysis; and structural determination of a NiO(111) film on Ni(100) by dynamical low-energy electron-diffraction analysis.
Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire
Tatebayashi, J., E-mail: email@example.com; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.
Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells
Alpay, S. Pamir
Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with Į1210InGaN//Į1210GaN and Į0001InGaN//Į0001GaN epitaxial
Electronic structure mechanism of spin-polarized electron transport in a NiC60Ni system
Pandey, Ravi
Laboratory, Weapons and Materials Research Directorate, ATTN: AMSRD-ARL-WM, Aberdeen Proving Ground, MD 21005 Abstract The nature of chemical bonding and its effect on spin-polarized electron transport in NiŁC60ŁNi couple with metallic electrodes (e. g. Ni and Au), a key requirement for the Kondo effect
Influence of Ni on Martensitic Phase Transformations in NiTi Shape Memory Alloys
Frenzel, J. [Ruhr University, Bochum, Germany; George, Easo P [ORNL; Dlouhy, A. [Institute of Physics of Materials, Brno, Czech Republic; Somsen, Ch. [Ruhr University, Bochum, Germany; Wagner, M. F.-X [Ruhr University, Bochum, Germany; Eggeler, G. [Ruhr University, Bochum, Germany
High-precision data on phase transformation temperatures in NiTi, including numerical expressions for the effect of Ni on M{sub S}, M{sub F}, A{sub S}, A{sub F} and T{sub 0}, are obtained, and the reasons for the large experimental scatter observed in previous studies are discussed. Clear experimental evidence is provided confirming the predictions of Tang et al. 1999 regarding deviations from a linear relation between the thermodynamic equilibrium temperature and Ni concentration. In addition to affecting the phase transition temperatures, increasing Ni contents are found to decrease the width of thermal hysteresis and the heat of transformation. These findings are rationalized on the basis of the crystallographic data of Prokoshkin et al. 2004 and the theory of Ball and James. The results show that it is important to document carefully the details of the arc-melting procedure used to make shape memory alloys and that, if the effects of processing are properly accounted for, precise values for the Ni concentration of the NiTi matrix can be obtained.
Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells
Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: email@example.com; Shen, B., E-mail: email@example.com [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)
Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.
High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor
Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: firstname.lastname@example.com; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)
In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.
Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures
Kuppulingam, B., E-mail: firstname.lastname@example.com; Singh, Shubra, E-mail: firstname.lastname@example.com; Baskar, K., E-mail: firstname.lastname@example.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)
Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.
Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)
Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.
InGaN/GaN single-quantum-well microdisks
Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)
We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.
Properties of electroless Ni-W-P amorphous alloys
Zhang Bangwei [Academia Sinica, Shenyang (China). International Centre of Materials Physics] [Academia Sinica, Shenyang (China). International Centre of Materials Physics; [Hunan Univ., Changsha (China). Dept. of Applied Physics; Hu Wangyu; Zhang Qinglong; Qu Xuanyuan [Hunan Univ., Changsha (China). Dept. of Applied Physics] [Hunan Univ., Changsha (China). Dept. of Applied Physics
This paper describes work performed to determine some of the properties of the electroless Ni-W-P amorphous deposits. Phosphorus contents were varied up to 32 at.%, and the amorphous structure was found to be present at phosphorus contents above 5 at.%. Irrespective of P content, all the deposits exhibits excellent adhesion to metallic substrates. The addition of even small amounts of W provided greatly increased hardness compared with the plain Ni-P deposits. The wettability properties of the Ni-W-P deposits were found to be comparable to those of Ni-P and N-B-P deposits but inferior to those of Ni-B deposits.
Microstructure of electrodeposited Cu-Ni binary alloy films
Mizushima, Io; Chikazawa, Masatoshi; Watanabe, Tohru [Tokyo Metropolitan Univ. (Japan). Dept. of Industrial Chemistry
The codeposition of Cu and Ni in the electrodeposition method without a complexing agent is difficult, since the standard electrode potentials of Cu and Ni differ by approximately 600 mV. In this study, the electrodeposited Cu-Ni alloy films with various compositions were obtained using glycine as the complexing agent. Consequently, composition of the deposited Cu-Ni alloy films can be controlled by bath composition and pH, and the crystallographic structure of all the deposited Cu-Ni alloy films consists of a single solid solution and is not influenced by pH.
In Situ XAS of Ni-W Hydrocracking Catalysts
Yang, N. [Argonne National Laboratory, Argonne, IL 60439 (United States); Mickelson, G. E.; Greenlay, N.; Bare, Simon R. [UOP LLC, Des Plaines, IL 60016 (United States); Kelly, S. D. [EXAFS Analysis, Bolingbrook, IL 60440 (United States)
Ni-W based catalysts are very attractive in hydrotreating of heavy oil due to their high hydrogenation activity. In the present research, two catalyst samples, prepared by different methods, that exhibit significant differences in activity were sulfided in situ, and the local structure of the Ni and W were studied using X-ray absorption spectroscopy (XAS). The Ni XANES spectra were analyzed using a linear component fitting, and the EXAFS spectra of the WS2 platelets in the sulfided catalysts were modeled. The Ni and W are fully sulfided in the higher activity sample, and there are both unsulfided Ni ({approx}25%) and W (<10%) in the lower activity sample.
Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona
Anderson, Timothy J.
be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP
Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures
Morozov, S. V.; Kryzhkov, D. I., E-mail: firstname.lastname@example.com; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)
In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.
AlGaN/GaN field effect transistors for power electronicsŚEffect of finite GaN layer thickness on thermal characteristics
Hodges, C., E-mail: firstname.lastname@example.com; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.
Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy
Jenkins, Catherine; Scholl, Andreas; Kainuma, R.; Elmers, Hans-Joachim; Omori, Toshihiro
The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe{sub 2}MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 22.214.171.124 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni{sub 2}MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e#11;ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.
InGaAsP/InGaP buried heterostructure lasers at 810 nm
Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.
InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.
Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT
Das, Palash, E-mail: email@example.com; Biswas, Dhrubes, E-mail: email@example.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)
The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.
Large {beta}-Delayed Neutron Emission Probabilities in the {sup 78}Ni Region
Winger, J. A.; Ilyushkin, S. V. [Department of Physics and Astronomy, Mississippi State University, Mississippi State, Mississippi 39762 (United States); Rykaczewski, K. P.; Gross, C. J.; Shapira, D. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Batchelder, J. C. [UNIRIB, Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831 (United States); Goodin, C.; Hamilton, J. H. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Grzywacz, R. [Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Korgul, A. [Institute of Experimental Physics, Warsaw University, Warszawa, PL 00-681 (Poland); Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Joint Institute for Heavy-Ion Reactions, Oak Ridge, Tennessee 37831 (United States); Krolas, W. [Institute of Nuclear Physics, Polish Academy of Sciences, Krakow, PL 31-342 (Poland); Joint Institute for Heavy-Ion Reactions, Oak Ridge, Tennessee 37831 (United States); Liddick, S. N. [UNIRIB, Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831 (United States); Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Mazzocchi, C. [Dept. of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); IFGA, University of Milan and INFN, Milano, I-20133 (Italy); Padgett, S.; Rajabali, M. M. [Dept. of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Piechaczek, A.; Zganjar, E. F. [Dept. of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803 (United States)] (and others)
The {beta}-delayed neutron branching ratios (P{sub {beta}}{sub n}) for nuclei near doubly magic {sup 78}Ni have been directly measured using a new method combining high-resolution mass separation, reacceleration, and digital {beta}-{gamma} spectroscopy of {sup 238}U fission products. The P{sub {beta}}{sub n} values for the very neutron-rich isotopes {sup 76-78}Cu and {sup 83}Ga were found to be much higher than previously reported and predicted. Revised calculations of the {beta}n process, accounting for new mass measurements and an inversion of the {pi}2p{sub 3/2} and {pi}1f{sub 5/2} orbitals, are in better agreement with these new experimental results.
Yang, Zhengchong
In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...
The structure of GaAs/Si(211) heteroepitaxial layers
Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.
Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.
Jiang, Daqiang, E-mail: email@example.com; Cui, Lishan; Jiang, Jiang; Zheng, Yanjun
Graphical abstract: - Highlights: Ģ In situ NiTi/Nb(Ti) composites were fabricated. Ģ The transformation temperature was affected by the mixing Ti:Ni atomic ratios. Ģ The NiTi component became micron-scale lamella after forging and rolling. Ģ The composite exhibited high strength and high damping capacity. - Abstract: This paper reports on the creation of a series of in situ NiTi/Nb(Ti) composites with controllable transformation temperatures based on the pseudo-binary hypereutectic transformation of NiTi¢Nb system. The composite constituent morphology was controlled by forging and rolling. It is found that the thickness of the NiTi lamella in the composite reached micron level after the hot-forging and cold-rolling. The NiTi/Nb(Ti) composite exhibited high damping capacity as well as high yield strength.
Influence of the surface potential on electrical properties of Al{sub x}Ga{sub 1-x}N/GaN heterostructures with different Al-content: Effect of growth method
Koehler, K.; Mueller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H. P.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O. [Fraunhofer-Institut fuer Angewandte Festkoerperphysik, Tullastrasse 72, 79108 Freiburg (Germany); Granzner, R.; Schwierz, F.; Buchheim, C. [Institut fuer Mikro- und Nanotechnologien, Technische Universitaet Ilmenau, PF 100565, 98684 Ilmenau (Germany); Goldhahn, R. [Institut fuer Experimentelle Physik, Otto-von-Guericke-Universitaet, Universitaetsplatz 2, 39106 Magdeburg (Germany)
The influence of the growth method on the surface potential and thus on the sheet carrier concentration of GaN capped Al{sub x}Ga{sub 1-x}N/GaN heterostructures was evaluated. Nominally undoped low pressure metal-organic vapor-phase (MOVPE) and plasma-assisted molecular beam epitaxial (PA-MBE) grown structures with an Al-content between 12% and 30% yield carrier concentrations from 3.6x10{sup 12} to 1.2x10{sup 13} cm{sup -2}. A difference of the concentrations for a fixed Al-content was found between the different epitaxial techniques. This result indicates unambiguously different surface potentials determined quantitatively from the carrier concentration, and is verified in addition by the results of photoreflectance spectroscopy. The GaN surface potentials of MOVPE and PA-MBE grown samples amounts to (0.26{+-}0.04) and (0.61{+-}0.10) eV irrespective of the Al-content of the barrier layer. After device fabrication, we find that due to the identical surface potential defined by the Ni Schottky gate, the threshold voltage for a given Al-content is the same for samples grown with different techniques. Thus, the interplay between epitaxy and process technology defines the threshold voltage.
Over 30{percent} efficient InGaP/GaAs tandem solar cells
Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)
A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}
GaTe semiconductor for radiation detection
Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
Magnetic field-induced phase transformation in NiMnCoIn magnetic shape memory alloys - a new actuation mechanism with large work output.
Karaca, H. E.; Karaman, I.; Basaran, B.; Ren, Y.; Chumlyakov, Y. I.; Maier, H. J.; X-Ray Science Division; Texsas A& M Univ.; Univ. of Kentucky; Siberian Physical-Technical Inst.; Univ. of Paderborn
Magnetic shape memory alloys (MSMAs) have recently been developed into a new class of functional materials that are capable of magnetic-field-induced actuation, mechanical sensing, magnetic refrigeration, and energy harvesting. In the present work, the magnetic field-induced martensitic phase transformation (FIPT) in Ni{sub 45}Mn{sub 36.5}Co{sub 5}In{sub 13.5} MSMA single crystals is characterized as a new actuation mechanism with potential to result in ultra-high actuation work outputs. The effects of the applied magnetic field on the transformation temperatures, magnetization, and superelastic response are investigated. The magnetic work output of NiMnCoIn alloys is determined to be more than 1 MJ m{sup -3} per Tesla, which is one order of magnitude higher than that of the most well-known MSMAs, i.e., NiMnGa alloys. In addition, the work output of NiMnCoIn alloys is orientation independent, potentially surpassing the need for single crystals, and not limited by a saturation magnetic field, as opposed to NiMnGa MSMAs. Experimental and theoretical transformation strains and magnetostress levels are determined as a function of crystal orientation. It is found that [111]-oriented crystals can demonstrate a magnetostress level of 140 MPa T{sup -1} with 1.2% axial strain under compression. These field-induced stress and strain levels are significantly higher than those from existing piezoelectric and magnetostrictive actuators. A thermodynamical framework is introduced to comprehend the magnetic energy contributions during FIPT. The present work reveals that the magnetic FIPT mechanism is promising for magnetic actuation applications and provides new opportunities for applications requiring high actuation work-outputs with relatively large actuation frequencies. One potential issue is the requirement for relatively high critical magnetic fields and field intervals (1.5-3 T) for the onset of FIPT and for reversible FIPT, respectively.
Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography
Hodges, C., E-mail: firstname.lastname@example.com; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)
We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.
Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin
with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high
Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting
Wetzel, Christian M.
of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode
The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based
InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall
Woodall, Jerry M.
░C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown
GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer
GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies
GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization
Wetzel, Christian M.
GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn
Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
Nabben, Reinhard
Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems
Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes
Wetzel, Christian M.
-emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate
Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes
Wetzel, Christian M.
quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy
Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy
Nabben, Reinhard
. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures
Stripe-to-bubble transition of magnetic domains at the spin reorientation of (Fe/Ni)/Cu/Ni/Cu(001)
Wu, J.; Choi, J.; Won, C.; Wu, Y. Z.; Scholl, A.; Doran, A.; Hwang, Chanyong; Qiu, Z.
Magnetic domain evolution at the spin reorientation transition (SRT) of (Fe/Ni)/Cu/Ni/Cu(001) is investigated using photoemission electron microscopy. While the (Fe/Ni) layer exhibits the SRT, the interlayer coupling of the perpendicularly magnetized Ni layer to the (Fe/Ni) layer serves as a virtual perpendicular magnetic field exerted on the (Fe/Ni) layer. We find that the perpendicular virtual magnetic field breaks the up-down symmetry of the (Fe/Ni) stripe domains to induce a net magnetization in the normal direction of the film. Moreover, as the virtual magnetic field increases to exceed a critical field, the stripe domain phase evolves into a bubble domain phase. Although the critical field depends on the Fe film thickness, we show that the area fraction of the minority domain exhibits a universal value that determines the stripe-to-bubble phase transition.
Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy
Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)
GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.
Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm
Mezdrogina, M. M., E-mail: firstname.lastname@example.com [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)
Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.
Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes
Odnoblyudov, Vladimir
on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,
InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
Krishnamoorthy, Sriram, E-mail: firstname.lastname@example.com, E-mail: email@example.com; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: email@example.com, E-mail: firstname.lastname@example.com [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 ū 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?ū?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.
ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures
Paris-Sud XI, Universitķ de
ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN
DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS
Honsberg, Christiana
DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
Boyer, Edmond
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
Bowers, John
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN
Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities
Boyer, Edmond
, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton
Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells
As, Donat Josef
molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 ░C. The layers were
Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.
AlGaN/GaN HEMT With 300-GHz fmax
Chung, Jinwook W.
We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...
Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications
Piner, Edwin L.
This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...
High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
Hartono, Haryono
The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...
Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
Lu, Bin
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...
Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques
Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)
Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.
Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets
Bietti, Sergio, E-mail: email@example.com; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L¢NESS and Dipartimento di Scienza dei Materiali, UniversitÓ di Milano Bicocca, Via Cozzi 55, I¢20125 Milano (Italy); Fedorov, Alexey [L¢NESS and CNR¢IFN, via Anzani 42, I-22100 Como (Italy)
We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano¢disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31▒0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(ū2.1▒1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad¢atoms on III¢V crystal surfaces and the fabrication of designable nanostructures.
Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices
Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)
The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.
Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)
Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: firstname.lastname@example.com [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.
NiW and NiRu Bimetallic Catalysts for Ethylene Steam Reforming: Alternative Mechanisms for Sulfur Resistance
Rangan, M.; Yung, M. M.; Medlin, J. W.
Previous investigations of Ni-based catalysts for the steam reforming of hydrocarbons have indicated that the addition of a second metal can reduce the effects of sulfur poisoning. Two systems that have previously shown promise for such applications, NiW and NiRu, are considered here for the steam reforming of ethylene, a key component of biomass derived tars. Monometallic and bimetallic Al{sub 2}O{sub 3}-supported Ni and W catalysts were employed for ethylene steam reforming in the presence and absence of sulfur. The NiW catalysts were less active than Ni in the absence of sulfur, but were more active in the presence of 50 ppm H{sub 2}S. The mechanism for the W-induced improvements in sulfur resistance appears to be different from that for Ru in NiRu. To probe reasons for the sulfur resistance of NiRu, the adsorption of S and C{sub 2}H{sub 4} on several bimetallic NiRu alloy surfaces ranging from 11 to 33 % Ru was studied using density functional theory (DFT). The DFT studies reveal that sulfur adsorption is generally favored on hollow sites containing Ru. Ethylene preferentially adsorbs atop the Ru atom in all the NiRu (111) alloys investigated. By comparing trends across the various bimetallic models considered, sulfur adsorption was observed to be correlated with the density of occupied states near the Fermi level while C{sub 2}H{sub 4} adsorption was correlated with the number of unoccupied states in the d-band. The diverging mechanisms for S and C{sub 2}H{sub 4} adsorption allow for bimetallic surfaces such as NiRu that enhance ethylene binding without accompanying increases in sulfur binding energy. In contrast, bimetallics such as NiSn and NiW appear to decrease the affinity of the surface for both the reagent and the poison.
Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.
Nabben, Reinhard
Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald H÷nig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald H÷nig, Christian Kindel, Sven
Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.
Gilchrist, James F.
Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple
Quantum confinement in GaP nanoclusters
Laurich, B.K.; Smith, D.C.; Healy, M.D.
We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.
Transformation Induced Fatigue of Ni-Rich NiTi Shape Memory Alloy Actuators
Schick, Justin Ryan
TRANSFORMATION INDUCED FATIGUE OF NI-RICH NITI SHAPE MEMORY ALLOY ACTUATORS A Thesis by JUSTIN RYAN SCHICK Submitted to the O ce of Graduate Studies of Texas A&M University in partial ful llment of the requirements for the degree of MASTER... OF SCIENCE December 2009 Major Subject: Aerospace Engineering TRANSFORMATION INDUCED FATIGUE OF NI-RICH NITI SHAPE MEMORY ALLOY ACTUATORS A Thesis by JUSTIN RYAN SCHICK Submitted to the O ce of Graduate Studies of Texas A&M University in partial ful llment...
Engineering the Martensitic Transformation Hysteresis of Ni-Rich NiTi AlloysĀ
Franco, Brian Eelan
Ti is an intermetallic compound that forms in the Ni-Ti system when the Ni content is between 49-57% (at%) [21]. Its structure can take three distinct forms depending on the temperature; the CsCl B2 structure, the trigonal R phase, and the 9 monoclinic B19....2.1. Thermodynamic aspects of the martensitic transformation The martensitic transformation occurs via nucleation and growth of martensite inside of the austenite matrix. The condition for nucleation of martensite is described by: = 0...
UID-GaN doping1016 cm-3 2 m 5 m2 m
Paris-Sud XI, Universitķ de
2 Ąm Drain Silicon UID-GaN Ł doping1016 cm-3 1.1 Ąm 2 Ąm GateSource 2 Ąm 5 Ąm2 Ąm AirAir Al0.25GaN Ł doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30
Proton inelastic scattering on {sup 56}Ni in inverse kinematics
Kraus, G.; Egelhof, P.; Fischer, C.; Geissel, H.; Himmler, A.; Nickel, F.; Muenzenberg, G.; Schwab, W.; Weiss, A. [GSI, Darmstadt (Germany); Chulkov, L.; Golovkov, M.; Ogloblin, A. [I.V. Kurchatov Inst., Moscow (Russian Federation); Friese, J.; Gillitzer, A.; Koerner, H.J.; Peter, M. [TU, Munich (Germany); Henning, W.; Schiffer, J.P. [Argonne National Lab., IL (United States); Kratz, J.V. [Univ. of Mainz (Germany)
Inelastic proton scattering to the first excited 2{sup +} state at 2.701 MeV in doubly magic {sup 56}Ni was studied at 101 MeV/u in inverse kinematics. The radioactive {sup 56}Ni ion beam was obtained from the SIS heavy ion synchrotron at GSI Darmstadt via fragmentation of a {sup 58}Ni beam, and separation by the fragment separator (FRS). A value B(E2, 0{sup +} {yields} 2{sup +}) = 600 {+-} 120 e{sup 2} fm{sup 4} was obtained which corresponds to a deformation parameter {beta} ({sup 56}Ni) = 0.173 {+-} 0.017.
Fusion of radioactive $^{132}$Sn with $^{64}$Ni
J. F. Liang; D. Shapira; J. R. Beene; C. J. Gross; R. L. Varner; A. Galindo-Uribarri; J. Gomez del Campo; P. A. Hausladen; P. E. Mueller; D. W. Stracener; H. Amro; J. J. Kolata; J. D. Bierman; A. L. Caraley; K. L. Jones; Y. Larochelle; W. Loveland; D. Peterson
Evaporation residue and fission cross sections of radioactive $^{132}$Sn on $^{64}$Ni were measured near the Coulomb barrier. A large sub-barrier fusion enhancement was observed. Coupled-channel calculations including inelastic excitation of the projectile and target, and neutron transfer are in good agreement with the measured fusion excitation function. When the change in nuclear size and shift in barrier height are accounted for, there is no extra fusion enhancement in $^{132}$Sn+$^{64}$Ni with respect to stable Sn+$^{64}$Ni. A systematic comparison of evaporation residue cross sections for the fusion of even $^{112-124}$Sn and $^{132}$Sn with $^{64}$Ni is presented.
Computing Free Energy Landscapes: Application to Ni-based Electrocatal...
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
Computing Free Energy Landscapes: Application to Ni-based Electrocatalysts with Pendant Amines for H2 Production and Oxidation. Computing Free Energy Landscapes: Application to...
Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers
Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)
Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.
Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets
Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)
Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.
GaAs photoconductive semiconductor switch
Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.
A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.
GaAs photoconductive semiconductor switch
Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)
A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.
Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.
The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.
High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)
We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.
Defect studies in low-temperature-grown GaAs
Bliss, D.E.
High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.
PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities
Vuckovic, Jelena
in materials systems, including InP/InGaP,6Ł9 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17
Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes
Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)
We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.
Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots
Robert, C., E-mail: firstname.lastname@example.com, E-mail: email@example.com; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Universitķ Europķenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coļsmes, 35708 Rennes (France)] [Universitķ Europķenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coļsmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de FĒsica, Universidade Federal do Cearß, P.O. Box 6030, Fortaleza¢CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Go±i, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig LluĒs Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Universitķ de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Universitķ de Rennes 1, F-35042 Rennes Cedex (France)
The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.
Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates
Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)
We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.
Wide magnetic field range of Ni-P/PZT/Ni-P cylindrical layered magnetoelectric composites
Volinsky, Alex A.
magnetoelectric (ME) composites were prepared by electroless deposition. The Ni-P layer has an amorphous with epoxy,5 electrodeposition,6,7 and electroless deposition.8,9 The objective and the develop- ment trend films with good interfacial bonding.12 Nickel is a kind of conventional magnetic material suitable
Epitaxial growth of NiTiO3 with a distorted ilmenite structure...
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growth of NiTiO3 with a distorted ilmenite structure. Epitaxial growth of NiTiO3 with a distorted ilmenite structure. Abstract: MTiO3 (M Fe, Mn, Ni) compounds have received...
ag ni zn-addition: Topics by E-print Network
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Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...
Ni(II) Salts and 2-Propanol Effect Catalytic Reductive Coupling of Epoxides and Alkynes
Beaver, Matthew G.
A Ni-catalyzed reductive coupling of alkynes and epoxides using Ni(II) salts and simple alcohol reducing agents is described. Whereas previously reported conditions relied on Ni(cod)2 and Et3B, this system has several ...
Morphology and composition of Ni-Co electrodeposited powders
Maksimovic, V.M., E-mail: firstname.lastname@example.com [Institute of Nuclear Sciences, 'Vinca', University of Belgrade, 11001 Belgrade, P. O. Box 522 (Serbia); Lacnjevac, U.C. [Institute for Multidisciplinary research, University of Belgrade, P.O. Box 33, 11030 Belgrade (Serbia); Stoiljkovic, M.M. [Institute of Nuclear Sciences, 'Vinca', University of Belgrade, 11001 Belgrade, P. O. Box 522 (Serbia); Pavlovic, M.G. [Institute of Electrochemistry, ICTM, University of Belgrade, 11000 Belgrade, Njegoseva 12 (Serbia); Jovic, V.D. [Institute for Multidisciplinary research, University of Belgrade, P.O. Box 33, 11030 Belgrade (Serbia)
The morphology, phase and chemical composition of Ni-Co alloy powders electrodeposited from an ammonium sulfate-boric acid containing electrolyte with different ratio of Ni/Co ions were investigated. The ratios of Ni/Co ions were 1/1, 1/2 and 1/3. The morphology, chemical composition and phase composition of the electrodeposited alloy powders were investigated using AES, SEM, EDS and XRD analysis. Composition of the electrolyte, i.e. the ratio of Ni/Co concentrations was found to influence both, the alloy phase composition and the morphology of Ni-Co alloy powders. At the highest ratio of Ni/Co = 1/1 concentrations typical 2D fern-like dendritic particles were obtained. With a decrease of Ni/Co ions ratio among 2D fern-like dendrites, 3D dendrites and different agglomerates were obtained. X-ray diffraction studies showed that the alloy powders mainly consisted of the face-centered cubic {alpha}-nickel phase and hexagonal close-packed {epsilon}-cobalt phase and minor proportions of face-centered cubic {alpha}-cobalt phase. The occurrence of the latter phase was observed only in the alloy powder with the higher cobalt concentration in electrolyte. The electrodeposition of Ni-Co powders occurred in an anomalous manner. - Highlights: Black-Right-Pointing-Pointer Ni-Co alloys powders were successfully electrodeposited. Black-Right-Pointing-Pointer Composition of the electrolyte (Ni/Co ions ratio) was found to influence on morphology of powders. Black-Right-Pointing-Pointer The electrodeposition of Ni-Co powders occurred in an anomalous manner.
Degradation mechanisms of GaN high electron mobility transistors
Joh, Jungwoo
In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...
On strongly GA-convex functions and stochastic processes
Bekar, Nurg³l Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande G³nay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)
In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.
TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur
Schubart, Christoph
TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen f©ur optoelektronische Anwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.1.2 Versetzungen bei Homoapitaxie auf GaN-Substraten . . . . 79 5.2 Versetzungsreduktion durch
GaN Nanopore Arrays: Fabrication and Characterization
Wang, Yadong
GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...
atis vallis rihards: Topics by E-print Network
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po antjoko . Gradivo za nare?ni slovar severozahodnoprlekega govora University of Kansas - KU ScholarWorks Summary: .: mastjk m mast??a?k -a 1. izdelovalec (jedilnega)...
Height stabilization of GaSb/GaAs quantum dots by Al-rich capping
Smakman, E. P., E-mail: email@example.com; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.
2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators
Weinstein, Dana
A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...
High-field quasi-ballistic transport in AlGaN/GaN heterostructures
Danilchenko, B. A.; Tripachko, N. A. [Institute of Physics, NASU, Pr. Nauki 46, Kiev 03028 (Ukraine); Belyaev, A. E. [Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev 03028 (Ukraine); Vitusevich, S. A., E-mail: email@example.com; Hardtdegen, H.; L³th, H. [Peter Gr³nberg Institute (PGI-8,PGI-9), Forschungszentrum J³lich, J³lich D-52425 (Germany)
Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?ū?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.
AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
Seo, Kwang Seok
AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching 16, 2004; accepted May 10, 2005; published September 8, 2005) We have proposed and fabricated an AlGaN/GaN: GaN, AlGaN, HEMT, switch 1. Introduction GaN has attracted attention for high-power and high
Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off
As, Donat Josef
Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero insulation of 3C-SiC was realized by Ar+ implantation before c-AlGaN/GaN growth. HFETs with normally
A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs
York, Robert A.
WE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high
IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)
Cohen, Philip I.
IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN, firstname.lastname@example.com GaN grown on Ga polar GaN templates prepared by metal-organic vapor deposition shows to equilibrium models of the growth. The results indicate that Ga-polar GaN(0001) has a step energy of the order
Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid-and Deep-Ultraviolet Lasers
Gilchrist, James F.
Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers Volume.1109/JPHOT.2013.2248705 1943-0655/$31.00 ė2013 IEEE #12;Engineering of AlGaN-Delta-GaN Quantum-Well firstname.lastname@example.com). Abstract: The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions
Recent progress in InGaAsSb/GaSb TPV devices
Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)
AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.
AlGaAs/GaAs photovoltaic converters for high power narrowband radiation
Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)
AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.
Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures
Haj?asz, M., E-mail: email@example.com [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)
For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.
TEM and HRXRD Analysis of LP MOVPE Grown InGaP/GaAs epilayers
Pelosi, Claudio; Bosi, Matteo; Attolini, Giovanni; Germini, Fabrizio; Frigeri, Cesare [CNR-IMEM Institute, Parco Area delle Scienze 37a, Loc Fontanini 43010 Parma (Italy); Prutskij, Tatiana [Instituto de Ciencias, BUAP, Privada 17 Norte, no. 3417, colSanMiguel Hueyotlipan, 72050 Puebla, Pue. (Mexico)
The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.
Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes
Cornelius S. Bausch; Aune Koitmõe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick
We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.
InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening
Glauser, Marlene; Mounir, Christian; Rossbach, Georg; Feltin, Eric; Carlin, Jean-Franńois; Buttķ, Raphaļl; Grandjean, Nicolas [╔cole Polytechnique Fķdķrale de Lausanne (EPFL), Institute of Condensed Matter Physics, CH-1015 Lausanne (Switzerland)
Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadening issue can prevent a microcavity (MC) system entering into the strong light-matter coupling regime (SCR). The impact of excitonic disorder in low indium content (x???0.1) In{sub x}Ga{sub 1¢x}N/GaN MQW active regions is therefore investigated for the subsequent realization of polariton laser diodes by considering both simulations and optical characterizations. It allows deriving the requirements for such MQWs in terms of absorption, emission linewidth, and Stokes shift. Systematic absorption-like and photoluminescence (PL) spectroscopy experiments are performed on single and multiple In{sub 0.1}Ga{sub 0.9}N/GaN quantum wells (QWs). Micro-PL mappings reveal a low temperature PL linewidth of ?30?meV, compatible with SCR requirements, for single QWs for which the microscopic origin responsible for this broadening is qualitatively discussed. When stacking several InGaN/GaN QWs, a departure from such a narrow linewidth value and an increase in the Stokes shift are observed. Various possible reasons for this degradation such as inhomogeneous built-in field distribution among the QWs are then identified. An alternative solution for the MC design to achieve the SCR with the InGaN alloy is briefly discussed.
Microscale Investigations of Ni Uptake by Cement Using a
Microscale Investigations of Ni Uptake by Cement Using a Combination of Scanning Electron Laboratory, IMX, Ecole Polytechnique Fe┤de┤ral de Lausanne (EPFL), 1015 Lausanne, Switzerland Cement is used-level radioactive waste. In this study, Ni uptake by hardened cement paste has been investigated with the aim
Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants
Gschneidner, K.A. Jr.; Takeya, Hiroyuki
A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd{sub 0.54}Er{sub 0.46})AlNi alloys having a relatively constant {Delta}Tmc over a wide temperature range. 16 figs.
Rapid Communications Strong piezoelectricity in individual GaN nanowires
Espinosa, Horacio D.
Rapid Communications Strong piezoelectricity in individual GaN nanowires Majid firstname.lastname@example.com (Received 12 July 2011; accepted 15 September 2011) Abstract GaN nanowires are promising building blocks piezoelectricity in individual single-crystal GaN nanowires revealed by direct measurement of the piezoelectric
GaN Radiation Detectors for Particle Physics and
Glasgow, University of
GaN Radiation Detectors for Particle Physics and Synchrotron Applications James Paul Grant and monitoring applications. Gallium nitride (GaN) was investigated as a radiation hard particle detector diameter on three epitaxial GaN wafers grown on a sapphire sub- strate. Two of the wafers were obtained
New Faces of GaN: Growth, Doping and Devices
California at Santa Barbara, University of
New Faces of GaN: Growth, Doping and Devices James S. Speck Materials Department University of California Santa Barbara, CA LEO of a-GaN from circular opening Engineering Insights 2006 #12;#12;Personnel. Wraback (ARL) $$$ JST Ł ERATO UCSB SSLDC AFOSR ONR #12;Reversed direction of polarization Bulk GaN
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)
The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.
A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+
McKittrick, Joanna
A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion
Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves
improve the room-temperature carrier mobility in wurtzite AlN/GaN/AlN heterostructures, which is limited consider a narrow groove made of InxGa1-xN with small In content x inside a wurtzite AlN/GaN/AlN heteroN 2 nm /GaN 3 nm /AlN 3 nm . A well-known feature of wurtzite heterostructures is a strong buit
Growth of GaN on porous SiC and GaN substrates C. K. Inoki1
Feenstra, Randall
1 Growth of GaN on porous SiC and GaN substrates C. K. Inoki1 , T. S. Kuan1 , Ashutosh Sagar2 , C, Albuquerque, NM 87185 4 Beckman Institute, University of Illinois, Urbana, IL 61801 GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal
Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer
Ozbay, Ekmel
N buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL. In the present study, we investigate the effects of an AlN BL on an Al2O3 substrate and an AlN IL between an AlGaNStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer
Hydrides of CeNi/sub 5/, MmNi/sub 5/, Ca/sub 0/ /sub 2/(Ce/sub 0/ /sub 65/Mm/sub 0/ /sub 35/)/sub 0/ /sub 8/Ni/sub 5/, Ca/sub 0/ /sub 2/Ce/sub 0/ /sub 8/Ni/sub 5/, Ca/sub 0/ /sub 2/Mm/sub 0/ /sub 8/Ni/sub 5/, and mixed CeNi/sub 5//MmNi/sub 5/
Lakner, J.F.; Chow, T.S.
Six intermetallic alloys (CeNi/sub 5/, MmNi/sub 5/, Ca/sub 0/ /sub 2/(Ce/sub 0/ /sub 65/Mm/sub 0/ /sub 35/)/sub 0/ /sub 8/Ni/sub 5/, Ca/sub 0/ /sub 2/Ce/sub 0/ /sub 8/Ni/sub 5/, Ca/sub 0/ /sub 2/Mm/sub 0/ /sub 8/Ni/sub 5/, and a mixed alloy, CeNi/sub 5//MmNi/sub 5/) were investigated with respect to their suitability to provide high hydrogen capacity and their potential for use in providing substantial hydrogen pressure at both low and high temperatures. A second phase of our investigation dealt with ball-milling and hydriding and dehydriding cycles to produce fine particles for use in hydride powder transfer studies. A summary of several Van't Hoff plots is also included for hydride-forming alloys.
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure
Fisichella, G. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy); Department of Electronic Engineering, University of Catania, 95124 Catania (Italy); Greco, G.; Roccaforte, F.; Giannazzo, F. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy)
The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1?x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (?{sub B}???0.6?eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (?{sub B}???0.9?eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (?{sub B} ? 0.4?eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.
Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding
Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.
Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.
X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition
Nittono, T.; Hyuga, F. [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)] [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)
InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH{sub 3} to InGaP surface produces an InGaAs-like interfacial layer at the GaAs-on-InGaP interface, indicating P atoms of the InGaP surface are easily replaced by As atoms. The flow of PH{sub 3} to GaAs surface, on the other hand, does not make any detectable interfacial layer, indicating that almost no As atoms of the GaAs surface are replaced by P atoms. It is also found that the flow of trimethylgallium (TMG) to the InGaP surface produces a GaP-like interfacial layer. This interfacial layer is probably formed by the reaction between TMG and excessive P atoms on the InGaP surface or residual PH{sub 3} in the growth chamber. {copyright} {ital 1997 American Institute of Physics.}
Physica B 376377 (2006) 486490 Preferential substitution of Fe on physically equivalent Ga sites in GaN
Nabben, Reinhard
in GaN W. Gehlhoff├, D. Azamat1 , U. Haboeck, A. Hoffmann Institute for Solid State Physics, Technical freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with C3v symmetry in the wurtzite structure of GaN. Aside from the displacement of their magnetic axis
Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation
Wetzel, Christian M.
and bulk GaN substrates, respectively. Under intense pulsed photo excitation, we observed strong the same excitation conditions, the blue shift for the m-axis grown structure on bulk GaN substrate is less-plane sapphire substrate and along the non-polar m-axis on m-plane bulk GaN substrate. The frequently used
Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography
Liu, Fang; Huang, Li; Davis, Robert F.; Porter, Lisa M.; Schreiber, Daniel K.; Kuchibhatla, S. V. N. T.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Preble, Edward; Paskova, Tanya; Evans, K. R.
In0.20Ga0.80N/GaN multi-quantum wells grown on [0001]-oriented GaN substrates with and without an InGaN buffer layer were characterized using three-dimensional atom probe tomography. In all samples, the upper interfaces of the QWs were slightly more diffuse than the lower interfaces. The buffer layers did not affect the roughness of the interfaces within the quantum well structure, a result attributed to planarization of the surface of the 1st GaN barrier layer which had an average root-mean-square roughness of 0.177 nm. The In and Ga distributions within the MQWs followed the expected distributions for a random alloy with no indications of In clustering.
Point defect balance in epitaxial GaSb
Segercrantz, N., E-mail: email@example.com; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 G÷teborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p¢type conductivity is caused by different defects in GaSb grown with different methods.
Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy
Wakao, K.; Nishi, H.; Kusunoki, T.; Isozumi, S.; Ohsaka, S.
InGaAsP/InGaP lasers emitting at 724--727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm/sup 2/ by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.
Self-assembled In0.5Ga0.5As quantum dots on GaP Yuncheng Song,a
Haller, Gary L.
SAQDs . Several groups have investigated the growth of both InP and In-rich InGaP SAQDs on GaP.7Ł12 Most temperature operation of vis- ible light emitting diodes LEDs using InP/GaP and InGaP/ GaP SAQDs, respectively
Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns
Jahns, J³rgen
Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J spreading in a mesa-structure GaN-based LED grown on an insulating or semi-insulating substrate. (b. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating
Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes
Odnoblyudov, Vladimir
? G, Kcal/mol GaP GaN AlN o Substrate temperature, C Figurenm-thick GaN 0.006 P 0.994 layer on substrate temperature.substrate temperature for Reactions formation of AlP, GaP, GaN and
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN HFET Power Amplifier Integrated With
Itoh, Tatsuo
the first demonstration of a GaN-based HFET was done on a sapphire substrate in 1993 [1]Ł[3]. This is due crystal quality compared to that of the sapphire substrate. Thanks to steadfast progress in AlGaN/GaN HFETIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN
Preparation of Ni-Sn alloys by an electroless-deposition method
Shimauchi, Hidenori; Ozawa, Susumu; Tamura, Keiu; Osaka, Tetsuya (Waseda Univ., Tokyo (Japan). Dept. of Applied Chemistry)
Ni-Sn alloy is expected for as a functional material, because of its excellent corrosion resistance, wear resistance, and solderability. Electroless-deposited Ni-Sn alloy films were investigated to increase tin content in the deposit. The maximum tin contents of electroless Ni-Sn-P and Ni-Sn-B were ca. 30 atom percent (a/o) and 42 a/o, respectively. The maximum tin contents in the case of Ni-Sn-B was nearly equal to that of electrodeposited Ni-Sn alloy already reported. The crystallinity of Ni-Sn-P and Ni-Sn-B alloys was raised up with an increase in tin content. The corrosion resistance of Ni-Sn-P and Ni-Sn-B alloys was between that of amorphous and crystalline electroless-deposited Ni-P. Codeposition of tin into Ni-P films improved solderability, but into the Ni-B films, the solderability of Ni-Sn-B films situated in the region between those of Ni-P and NiB, because the solderability of NiB is higher.
Tunable THz plasmon resonances in InGaAs/InP HEMT R. E. Peale*a
Peale, Robert E.
, high ns, and small m*. A variety of materials systems such as GaAs/AlGaAs [3], InGaP/InGaAs/GaAs [4
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates
fabricated on freestanding GaN substrates T. Koyama and T.on freestanding m-plane GaN substrates. Although the ? inton the freestanding GaN substrate. cause the current was
Reactive codoping of GaAlInP compound semiconductors
Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)
A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.
Ni/metal hydride secondary element
Bauerlein, Peter
A Ni/metal hydride secondary element having a positive nickel hydroxide electrode, a negative electrode having a hydrogen storage alloy, and an alkaline electrolyte, the positive electrode, provided with a three-dimensional metallic conductive structure, also contains an aluminum compound which is soluble in the electrolyte, in addition to nickel hydroxide and cobalt oxide. The aluminum compound is aluminum hydroxide and/or aluminum oxide, and the mass of the aluminum compound which is present in the positive bulk material mixture is 0.1 to 2% by weight relative to the mass of the nickel hydroxide which is present. In combination with aluminum hydroxide or aluminum oxide, the positive electrode further contains lanthanoid oxidic compounds Y.sub.2 O.sub.3, La.sub.2 O.sub.3 and Ca(OH).sub.2, as well as mixtures of these compounds.
Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1?x}Ga{sub x} thin films on GaSb(100)
Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae, E-mail: firstname.lastname@example.com [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Phan, The-Long [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)
The Fe{sub 1?x}Ga{sub x} thin films (x?=?0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc ?-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570?emu/cm{sup 3} and 180?emu/cm{sup 3} and the coercivities to be 170 and 364?Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.
Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy
Ueda, O.; Wakao, K.; Komiya, S.; Yamaguchi, A.; Isozumi, S.; Umebu, I.
Catastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of <110> dark-line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of <110> dark-line defects from the defects inside the stripe region. These <110> dark-line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double-heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double-heterostructure lasers are rather similar to those in GaAlAs/GaAs double-heterostructure lasers concerning the catastrophic degradation.
Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN
Binder, J.; Korona, K. P.; Wysmo?ek, A.; Kami?ska, M. [Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw (Poland); K÷hler, K.; Kirste, L.; Ambacher, O. [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Zaj?c, M.; Dwili?ski, R. [AMMONO SA, Czerwonego Krzy?a 2/31, 00-377 Warsaw (Poland)
In this work, we present measurements of the dynamics of photoexcited carriers in GaInN/GaN quantum wells (QWs) grown on ammonothermal GaN, especially thermalization and recombination rates. Emission properties were measured by time-resolved photoluminescence (PL) and electroluminescence spectroscopy. Due to the use of high quality homoepitaxial material, we were able to obtain very valuable data on carrier thermalization. The temperature dependence of the QW energy observed in PL shows characteristic S-shape with a step of about 10?meV. Such a behavior (related to thermalization and localization at potential fluctuations) is often reported for QWs; but in our samples, the effect is smaller than in heteroepitaxial InGaN/GaN QWs due to lower potential fluctuation in our material. Absorption properties were studied by photocurrent spectroscopy measurements. A comparison of emission and absorption spectra revealed a shift in energy of about 60?meV. Contrary to PL, the QW energy observed in absorption decreases monotonically with temperature, which can be described by a Bose-like dependence E(T)?=?E(0) ? ?/(exp(?/T) ? 1), with parameters ??=?(0.11?▒?0.01) eV, ??=?(355?▒?20)?K, or by a Varshni dependence with coefficients ??=?(10?▒?3) ū 10{sup ?4}?eV/K and ??=?(1500?▒?500) K. Taking into account absorption and emission, the fluctuation amplitude (according to Eliseev theory) was ??=?14?meV. The time resolved PL revealed that in a short period (<1?ns) after excitation, the PL peaks were broadened because of the thermal distribution of carriers. We interpreted this distribution in terms of quasi-temperature (T{sub q}) of the carriers. The initial T{sub q} was of the order of 500?K. The thermalization led to a fast decrease of T{sub q}. The obtained cooling time in the QW was ?{sub C}?=?0.3?ns, which was faster than the observed recombination time ?{sub R}?=?2.2?ns (at 4?K)
Reaction synthesis of Ni-Al based particle composite coatings
Electrodeposited metal matrix/metal particle composite (EMMC) coatings were produced with a nickel matrix and aluminum particles. By optimizing the process parameters, coatings were deposited with 20 volume percent aluminum particles. Coating morphology and composition were characterized using light optical microscopy (LOM), scanning electron microscopy (SEM), and electron probe microanalysis (EPMA). Differential thermal analysis (DTA) was employed to study reactive phase formation. The effect of heat treatment on coating phase formation was studied in the temperature range 415 to 1,000 C. Long-time exposure at low temperature results in the formation of several intermetallic phases at the Ni matrix/Al particle interfaces and concentrically around the original Al particles. Upon heating to the 500--600 C range, the aluminum particles react with the nickel matrix to form NiAl islands within the Ni matrix. When exposed to higher temperatures (600--1,000 C), diffusional reaction between NiAl and nickel produces ({gamma})Ni{sub 3}Al. The final equilibrium microstructure consists of blocks of ({gamma}{prime})Ni{sub 3}Al in a {gamma}(Ni) solid solution matrix, with small pores also present. Pore formation is explained based on local density changes during intermetallic phase formation and microstructural development is discussed with reference to reaction synthesis of bulk nickel aluminides.
Development of Co-Ni-Ga Ferromagnetic Shape Memory Alloys (FSMAs) by Investigating the Effects of Solidification Processing Parameters
Kalaantari, Haamun
alloys. These materials are promising candidates for biomedical devices, Micro-Electro- Mechanical-System (MEMS) [4] and aerospace
Delocalization and hybridization enhance the magnetocaloric effect in Ni2Mn0.75Cu0.25Ga
Roy, Sujoy
new system for magnetic refrigeration. J. Phys: Condense! ect and magnetic refrigeration. J. Mag. Mag. Mater 200,
Microstructural Investigations On Ni-Ta-Al Ternary Alloys
Negache, M. [Laboratoire de Science et Genie des Materiaux Universite of Sciences and Technologies Houari, Boumediene, FGMGP, BP32 El Alia Bab Ezzouar 16111 Algiers (Algeria); Department of Metallurgy, Nuclear Research Center of Algiers, BP 43 Sebala/Draria (Algeria); Taibi, K.; Lounis, Z. [Laboratoire de Science et Genie des Materiaux Universite of Sciences and Technologies Houari, Boumediene, FGMGP, BP32 El Alia Bab Ezzouar 16111 Algiers (Algeria); Souami, N. [Departement of Spetroscopie, Nuclear Research Center of Algiers, 2Bd Frantz Fanon BP399 Algiers (Algeria)
The Ni-Al-Ta ternary alloys in the Ni-rich part present complex microstructures. They are composed of multiple phases that are formed according to the nominal composition of the alloy, primary Ni(gamma), Ni{sub 3}Al(gamma'), Ni{sub 6}AlTa(tau{sub 3}), Ni{sub 3}Ta(delta) or in equilibrium: two solid phases (gamma'-tau{sub 3}), (tau{sub 3}-delta), (tau{sub 3}-gamma), (gamma-delta) or three solid phases (gamma'-tau{sub 3}-delta). The nature and the volume fraction of these phases give these alloys very interesting properties at high temperature, and this makes them attractive for specific applications. We have developed a series of ternary alloys in electric arc furnace, determining their solidification sequences using Differential Thermal Analysis (DTA), characterized by SEM-EDS, X-ray diffraction and by a microhardness tests. The follow-up results made it possible to make a correlation between the nature of the formed phases and their solidifying way into the Ni{sub 75}Al{sub x}Ta{sub y} (x+y = 25at.%) system, which are varied and complex. In addition to the solid solution Ni (gamma), the formed intermetallics compounds (gamma', tau{sub 3} and delta) has been identified and correlated with a complex balance between phases.We noticed that the hardness increases with the tantalum which has a hardening effect and though the compound Ni{sub 3}Ta(delta) is the hardest. The below results provide a better understanding of the complex microstructure of these alloys.
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de SŃo Carlos, Universidade de SŃo Paulo, 13560-970 Sao Carlos, SP (Brazil)
Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.
Graphene Monolayer Rotation on Ni(111) Facilities Bilayer Graphene Growth
Batzill M.; Sutter P.; Dahal, A.; Addou, R.
Synthesis of bilayer graphene by chemical vapor deposition is of importance for graphene-based field effect devices. Here, we demonstrate that bilayer graphene preferentially grows by carbon-segregation under graphene sheets that are rotated relative to a Ni(111) substrate. Rotated graphene monolayer films can be synthesized at growth temperatures above 650 C on a Ni(111) thin-film. The segregated second graphene layer is in registry with the Ni(111) substrate and this suppresses further C-segregation, effectively self-limiting graphene formation to two layers.
Nondestructive evaluation of Ni-Ti shape memory alloy
Meir, S.; Gordon, S.; Karsh, M.; Ayers, R.; Olson, D. L. [Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO (United States); Wiezman, A. [Netania (Israel)
The nondestructive evaluation of nickel titanium (Ni-Ti) alloys for applications such as heat treatment for biomaterials applications (dental) and welding was investigated. Ni-Ti alloys and its ternary alloys are valued for mechanical properties in addition to the shape memory effect. Two analytical approaches were perused in this work. Assessment of the microstructure of the alloy that determines the martensitic start temperature (Ms) of Ni-Ti alloy as a function of heat treatment, and secondly, an attempt to evaluate a Friction Stir Welding, which involves thermo-mechanical processing of the alloy.
Minority anion substitution by Ni in ZnO
Pereira, Lino Miguel da Costa; Correia, JoŃo Guilherme; Amorim, LĒgia Marina; Silva, Daniel Josķ; David-Bosne, Eric; Decoster, Stefan; da Silva, Manuel Ribeiro; Temst, Kristiaan; Vantomme, Andrķ
We report on the lattice location of implanted Ni in ZnO using the $\\beta$? emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors.
0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell
Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.
We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.
Excess Ni-doping induced enhanced room temperature magneto-functionality in Ni-Mn-Sn based shape memory alloy
Pramanick, S.; Giri, S.; Majumdar, S., E-mail: firstname.lastname@example.com [Department of Solid State Physics, Indian Association for the Cultivation of Science, 2A and B Raja S. C. Mullick Road, Jadavpur, Kolkata 700 032 (India); Chatterjee, S. [UGC-DAE Consortium for Scientific Research, Kolkata Centre, Sector III, LB-8, Salt Lake, Kolkata 700 098 (India)
Present work reports on the observation of large magnetoresistance (??30% at 80 kOe) and magnetocaloric effect (?12?JĘkg{sup ?1}ĘK{sup ?1} for 0¢50 kOe) near room temperature (?290?K) on the Ni-excess ferromagnetic shape memory alloy Ni{sub 2.04}Mn{sub 1.4}Sn{sub 0.56}. The sample can be thought of being derived from the parent Ni{sub 2}Mn{sub 1.4}Sn{sub 0.6} alloy, where excess Ni was doped at the expense of Sn. Such Ni doping enhances the martensitic transition temperature and for the Ni{sub 2.04}Mn{sub 1.4}Sn{sub 0.56} it is found to be optimum (288?K). The doped alloy shows enhanced magneto-functional properties as well as reduced saturation magnetization as compared to the undoped counterpart at low temperature. A probable increment of antiferromagnetic correlation between Mn-atoms on Ni substitution can be accounted for the enhanced magneto-functional properties as well as reduction in saturation moment.
Application of cluster-plus-glue-atom model to barrierless Cu¢Ni¢Ti and Cu¢Ni¢Ta films
Li, Xiaona, E-mail: firstname.lastname@example.com; Ding, Jianxin; Wang, Miao; Dong, Chuang [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Chu, Jinn P. [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)
To improve the thermal stability of copper and avoid its diffusion into surrounding dielectrics or interfacial reactions with them, the authors applied the cluster-plus-glue-atom model to investigate barrierless Cu¢Ni¢M (M?=?Ti or Ta) seed layers. The dissolution of the third element (Ti or Ta) in the Cu lattice with the aid of Ni significantly improved the thermal stability of the Cu seed layer. The appropriate M/Ni (M?=?Ti or Ta) ratio was selected to obtain a low resistivity: the resistivity was as low as 2.5??? cm for the (Ti{sub 1.5/13.5}Ni{sub 12/13.5}){sub 0.3}Cu{sub 99.7} film and 2.8??? cm for the (Ta{sub 1.1/13.1}Ni{sub 12/13.1}){sub 0.4}Cu{sub 99.6} film after annealing at 500?░C for 1?h. After annealing at 500?░C for 40?h, the two films remained stable without forming a Cu{sub 3}Si compound. The authors confirmed that the range of applications of the cluster-plus-glue-atom model could be extended. Therefore, a third element M with negative enthalpies of mixing with both Cu and Ni could be selected, under the premise that the mixing enthalpy of M¢Ni is more negative than that of M¢Cu.
Comparison of S, Pt, and Hf adsorption on NiAl(110) Karin M. Carling a
Carter, Emily A.
Gunaydin b , Tracy A. Mitchell b , Emily A. Carter a,b,* a Department of Mechanical and Aerospace. Keywords: NiAl alloy; (110) surface; Adsorption; Hf; Pt; S; DFT 1. Introduction NiAl alloys alloys either contain primarily Ni, with Cr, Al, and Y do- pants [6Ł8], or are based on NiAlPt alloys [9
TiNi shape memory alloy thin films for microactuator application
Fu, Yongqing
TiNi films were prepared by co-sputtering TiNi target and a separate Ti target. Crystalline structure and phase transformation behaviors of TiNi films were investigated. Results showed that TiNi films had fine grain size ...
Perpendicular magnetic anisotropy in ion beam sputtered Co/Ni multilayers
Rasin, Boris
Co/Ni multilayers display perpendicular magnetic anisotropy and have applications in magnetic devices that could lead to a large increase in the density of magnetic storage. Co/Ni 10-(2 ┼ Co/ 8┼ Ni) and 10-(2 ┼ Co/ 4 ┼ Ni) ...
Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction
Brown, J S; Koblmuller, G; Wu, F; Averbeck, R; Riechert, H; Speck, J S
PA-MBE GaN growth conditions, with substrate temperatures ofthe GaN surface roughness evolution, substrate vicinality,vapor and substrate temperature could form the basis for GaN
Refractive index of erbium doped GaN thin films
Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: firstname.lastname@example.com [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States); Zavada, J. M. [Department of Electrical and Computer Engineering, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States)
GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540?nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300?arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540?nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.
Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors
Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.
GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.
Graphene in ohmic contact for both n-GaN and p-GaN
Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: email@example.com [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)
The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I¢V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.
Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells
Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.
Efficiency enhancement of InGaN/GaN solar cells with nanostructures
Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)
We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.
Intersubband absorption in AlN/GaN/AlGaN coupled quantum wells
Driscoll, Kristina; Bhattacharyya, Anirban; Moustakas, Theodore D.; Paiella, Roberto; Zhou, Lin; Smith, David J. [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215 (United States); Department of Physics and School of Materials, Arizona State University, Tempe, Arizona 85287 (United States)
AlN/GaN/AlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.
GaN based nanorods for solid state lighting
Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)
In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.
Reduction of gap states of ternary IIIV semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP
Kim, Sehun
studies of AlGaAs and InGaP J. M. Seo School of Physics and Technology, Jeonbuk National University on liquid-phase-epitaxy-grown n-type InGaP and AlGaAs surfaces have been studied using x-ray photoelectron treatment in air. For InGaP, sulfur atoms initially reacted with both surface In and Ga atoms and reacted
In0.6Ga0.4AsGaAs quantum-dot infrared photodetector with operating temperature up to 260 K
Florida, University of
the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current 100 K by us- ing a large band gap material such as AlGaAs or InGaP as the blocking barrier to reduce temperature up to 260 K without using the wide band gap AlGaAs or InGaP current blocking bar- rier. The sample
Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection
Eisenstein, Gadi
Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct relaxation oscillator is demonstrated. The diode is an Al-free InP/InGaP/InGaAs structure in the InP/InGaAs/InGaP aluminum-free material system, following the work of Cohen and Ritter [6
Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
Demir, Hilmi Volkan
the last quantum barrier in InGaN/GaN light-emitting diodes Zabu Kyaw, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple- quantum distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers Appl. Phys. Lett. 102
IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation-Doped
Rodwell, Mark J. W.
IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation--We demonstrate dual-gate AlGaN/GaN modula- tion-doped field-effect transistors (MODFETs) with gate-lengths of 0 power amplifiers. Index Terms--AlGaN/GaN, broadband power amplifiers, dual-gate FETs. I. INTRODUCTION
Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a
Asbeck, Peter M.
Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a M. Feng, G; published online 25 August 2006 The authors report radiative recombination from a graded-base InGaN/GaN microwave power has been obtained from GaN field-effect transistors, very few operational GaN-based HBTs
InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination
Demir, Hilmi Volkan
InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing://scitation.aip.org/content/aip/journal/apl/105/3?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High efficiency InGaN/GaN (2014); 10.1063/1.4867023 Effect of V-defects on the performance deterioration of InGaN/GaN multiple
Polarized emission lines from A-and B-type excitonic complexes in single InGaN/GaN quantum dots
Nabben, Reinhard
Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots M Cathodoluminescence measurements on single InGaN/GaN quantum dots QDs are reported. Complex spectra with up to five spectral region have been realized based on InGaN structures.1 Single-photon emission from GaN/AlN quantum
Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate C. Hums, T. Finger, T. Hempel, J. Christen, and A. Dadgara
Nabben, Reinhard
Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate C. Hums, T. Finger, T. Hempel, J spectra of InGaN/GaN heterostructures and quantum wells epitaxially grown on Si 111 substrates. This Fabry-Perot effect results from the high refractive index contrasts at the GaN/Si and the Air/InGaN interfaces
Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal
Ozbay, Ekmel
on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal undoped Al0.25Ga0.75N/GaN/ AlN heterostructures grown on sapphire substrate. ® 2007 Elsevier B.V. All of AlGaN on a thick GaN epilayer on a semi- insulating substrate. Spontaneous and strain induced
Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3CSiC ,,001...
As, Donat Josef
through the substrate. Cubic AlGaN/GaN heterostructures were grown in a RibeNonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3CŁSiC ,,001... E HFET was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3CŁSiC 001 by molecular beam
Ni(NiO)/single-walled carbon nanotubes composite: Synthesis of electro-deposition, gas sensing property for NO gas and density functional theory calculation
Li, Li; Zhang, Guo; Chen, Lei [Key Laboratory of Chemical Engineering Process and Technology for High-efficiency Conversion, College of Heilongjiang Province, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Chemical Engineering Process and Technology for High-efficiency Conversion, College of Heilongjiang Province, Heilongjiang University, Harbin 150080 (China); Bi, Hong-Mei [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China); Shi, Ke-Ying, E-mail: firstname.lastname@example.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)
Graphical abstract: The Ni(NiO)/semiconducting single-walled carbon nanotubes composite collected from the cathode after electro-deposition shows a high sensitivity to low-concentration NO gas at room temperature (18 ░C). Display Omitted Highlights: ? Ni(NiO) nanoparticles were deposited on semiconducting SWCNTs by electro-deposition. ? Ni(NiO)/semiconducting SWCNTs film shows a high sensitivity to NO gas at 18 ░C. ?Theoretical calculation reveals electron transfer from SWCNTs to NO via Ni. -- Abstract: Single-walled carbon nanotubes which contains metallic SWCNTs (m-SWCNTs) and semiconducting SWCNTs (s-SWCNTs) have been obtained under electric arc discharge. Their separation can be effectively achieved by the electro-deposition method. The Ni(NiO)/s-SWCNTs composite was found on cathode where Ni was partially oxidized to NiO at ambient condition with Ni(NiO) nanoparticles deposited uniformly on the bundles of SWCNTs. These results were confirmed by Raman spectra, transmission electron microscopy (TEM), scanning electron microscopy (SEM), UV¢vis¢NIR and TG characterizations. Furthermore, investigation of the gas sensing property of Ni(NiO)/s-SWCNTs composite film to NO gas at 18 ░C demonstrated the sensitivity was approximately 5% at the concentration of 97 ppb. Moreover, density functional theory (DFT) calculations were performed to explore the sensing mechanism which suggested the adsorption of NO molecules onto the composite through N¢Ni interaction as well as the proposition of electron transfer mechanisms from SWCNTs to NO via the Ni medium.
$^{64}$Ni+$^{64}$Ni fusion reaction calculated with the density-constrained time-dependent Hartree-Fock formalism
A. S. Umar; V. E. Oberacker
We study fusion reactions of the $^{64}$Ni+$^{64}$Ni system using the density-constrained time-dependent Hartree-Fock (TDHF) formalism. In this formalism the fusion barriers are directly obtained from TDHF dynamics. In addition, we incorporate the entrance channel alignments of the slightly deformed (oblate) $^{64}$Ni nuclei due to dynamical Coulomb excitation. We show that alignment leads to a fusion barrier distribution and alters the naive picture for defining which energies are actually sub-barrier. We also show that core polarization effects could play a significant role in fusion cross section calculations.
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Demir, Hilmi Volkan
. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in Ga. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light. Van de Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride light
Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Nakajima, Akira, E-mail: email@example.com; Ogura, Masahiko; Makino, Toshiharu; Nishizawa, Shin-ichi; Ohashi, Hiromichi; Yamasaki, Satoshi [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba 305-8568 (Japan); Liu, Pucheng; Kakushima, Kuniyuki; Iwai, Hiroshi [Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori, Yokohama, Kanagawa 226-8503 (Japan)
The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80¢460?K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm{sup 2}/Vs at 300?K was achieved with a density of 1?ū?10{sup 13}?cm{sup ?2}.
Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; H÷fling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad R÷ntgen-Research Center for Complex Material Systems, Universitõt W³rzburg, Am Hubland, D-97074, W³rzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.
Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces
Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)
We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.
Wavelength limits for InGaN quantum wells on GaN
Pristovsek, Markus, E-mail: firstname.lastname@example.com [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)
The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.
Application of the ASME code in the design of the GA-4 and GA-9 casks
Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))
General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.
Application of the ASME code in the design of the GA-4 and GA-9 casks
Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)
General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.
Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAs/AlxGa1 xAs and InGaP2 /AlxGa1 xAs heterostructures
Hohng, Sung Chul
-transfer phenomena in GaAs/AlxGa1 xAs and InGaP2 /AlxGa1 xAs heterostructures S. C. Hohng, D. W. Khang, Y. H. Ahn, J evidence of the two-step absorption process in anti-Stokes photoluminescence in both GaAs/AlxGa1 xAs and InGaP
Focus Article El Ni ~no and our future climate
Wittenberg, Andrew
Focus Article El Ni ~no and our future climate: where do we stand? Gabriel A. Vecchi and Andrew T activity, including a decrease in Atlantic hurricane activity6 and an eastward shift of western Pacific
Grain boundary relaxation strengthening of nanocrystalline Ni¢W alloys
Rupert, Timothy J.
The hardening effect caused by the relaxation of nonequilibrium grain boundary structure has been explored in nanocrystalline Ni¢W alloys. First, the kinetics of relaxation hardening are studied, showing that higher annealing ...
Mechanical Behavior of Cryomilled Ni Superalloy by Spark Plasma Sintering
Ni Superalloy by Spark Plasma Sintering Z. ZHANG, B.Q. HAN,cryomilling and spark plasma sintering (SPS) was studied.prepared by the spark plasma sintering (SPS) technique. To
TiNi-based thin films for MEMS applications
Fu, Yongqing
In this paper, some critical issues and problems in the development of TiNi thin films were discussed, including preparation and characterization considerations, residual stress and adhesion, frequency improvement, fatigue ...
The stellar (n,gamma) cross section of 62Ni
H. Nassar; M. Paul; I. Ahmad; D. Berkovits; M. Bettan; P. Collon; S. Dababneh; S. Ghelberg; J. P. Greene; A. Heger; M. Heil; D. J. Henderson; C. L. Jiang; F. Kaeppeler; H. Koivisto; S. O'Brien; R. C. Pardo; N. Patronis; T. Pennington; R. Plag; K. E. Rehm; R. Reifarth; R. Scott; S. Sinha; X. Tang; R. Vondrasek
The 62Ni(n,gamma)63Ni(t_1/2=100+-2 yrs) reaction plays an important role in the control of the flow path of the slow neutron-capture (s-) nucleosynthesis process. We have measured for the first time the total cross section of this reaction for a quasi-Maxwellian (kT = 25 keV) neutron flux. The measurement was performed by fast-neutron activation, combined with accelerator mass spectrometry to detect directly the 63Ni product nuclei. The experimental value of 28.4+-2.8 mb, fairly consistent with a recent theoretical estimate, affects the calculated net yield of 62Ni itself and the whole distribution of nuclei with 62
Electrodeposition of amorphous matrix Ni-W/Wp╠│ composites
Jenket, Donald R. (Donald Robert)
An amorphous Ni-W alloy matrix was incorporated with W particulate through two types of electrodeposition. The plating bath for the electrodeposition contained nickel sulfate, sodium tungstate, sodium citrate, ammonium ...
Double dumbbell shaped AgNi alloy by pulsed electrodeposition
Dhanapal, K.; Vasumathi, M.; Santhi, Kalavathy [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600 025 (India); Narayanan, V., E-mail: email@example.com; Stephen, A., E-mail: email@example.com [Department of Inorganic Chemistry, University of Madras, Guindy Campus, Chennai-600 025 (India)
Silver-Nickel is the well-known thermally immiscible system that makes them quite complex for the formation of alloy. This kind of alloy can be attained from electrodeposition method. In the present work, AgNi alloy was synthesized by pulsed electrodeposition in a single bath two electrode system with the use of anodic alumina membrane. The prepared AgNi alloy and pure Ag were characterized with X-ray Diffraction (XRD) for structural confirmation, Scanning Electron Microscopy (SEM) for morphological, and magnetic properties by Vibrating Sample Magnetometer, respectively. The X-ray Diffraction study shows the formation of cubic structure for pure Ag. SEM analysis reveals the double dumbbell morphology for AgNi alloy and spherically agglomeration for pure silver. Hysteresis behaviour from VSM measurement indicates that the AgNi alloy have good ferro-magnetic properties.
alloying ni yoru: Topics by E-print Network
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memory alloy Elastic modulus Wrinkling Thermoelastic strain in a polycrystalline Fe-Pd thin film 213 (X?1.5) Alloys 1 CiteSeer Summary: A series Ni41-xMn50Sn9+x of Heusler...
Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode
InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated
Distributed bragg reflector using AIGaN/GaN
Waldrip, Karen E.; Lee, Stephen R.; Han, Jung
A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.
Ion-beam-induced chemical disorder in GaN
Ishimaru, Manabu; Zhang, Yanwen; Weber, William J.
Atomistic structures of high-energy ion irradiated GaN have been examined using transmission electron microscopy (TEM). Single crystalline GaN substrates were irradiated at cryogenic temperature with 2 MeV Au2+ ions to a fluence of 7.35x1015 Au/cm2. Cross-sectional TEM observations revealed that damaged layers consisting of amorphous and nanocrystalline phases are formed at the surface and buried depth of the as-irradiated GaN substrate. Atomic radial distribution functions of the amorphous/poly-nanocrystalline regions showed that not only heteronuclear Ga-N bonds but also homonuclear Ga-Ga bonds exist within the first coordination shell. It was found that the ratio of heteronuclear-to-homonuclear bonds, i.e., the degree of chemical disorder is different between the surface and buried damaged layers. The alternation of chemical disorder was attributed to the difference in the defect formation processes between these layers.
Radiation Hard AlGaN Detectors and Imager
Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.
Anomalous magnetic behavior in nanocomposite materials of reduced graphene oxide-Ni/NiFe{sub 2}O{sub 4}
Kollu, Pratap, E-mail: email@example.com, E-mail: email@example.com, E-mail: firstname.lastname@example.com [DST-INSPIRE Faculty, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Prathapani, Sateesh; Varaprasadarao, Eswara K.; Mallick, Sudhanshu; Bahadur, D., E-mail: email@example.com, E-mail: firstname.lastname@example.com, E-mail: email@example.com [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Santosh, Chella; Grace, Andrews Nirmala, E-mail: email@example.com, E-mail: firstname.lastname@example.com, E-mail: email@example.com [Centre for Nanotechnology Research, VIT University, Vellore 632014 (India)
Magnetic Reduced Graphene Oxide-Nickel/NiFe{sub 2}O{sub 4} (RGO-Ni/NF) nanocomposite has been synthesized by one pot solvothermal method. Respective phase formations and their purities in the composite are confirmed by High Resolution Transmission Electron Microscope and X Ray Diffraction, respectively. For the RGO-Ni/NF composite material finite-size effects lead to the anomalous magnetic behavior, which is corroborated in temperature and field dependent magnetization curves. Here, we are reporting the behavior of higher magnetization values for Zero Field Cooled condition to that of Field Cooled for the RGO-Ni/NF nanocomposite. Also, the observed negative and positive moments in Hysteresis loops at relatively smaller applied fields (100?Oe and 200?Oe) are explained on the basis of surface spin disorder.
Shape memory behavior of ultrafine grained NiTi and TiNiPd shape memory alloys
Kockar, Benat
The cyclic instability in shape memory characteristics of NiTi-based shape memory alloys (SMAs), such as transformation temperatures, transformation and irrecoverable strains and transformation hysteresis upon thermal and mechanical cycling limits...
O?[]O? nuclear ?-decay of ?▓Ga
Hyman, Bruce Carl
information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...
Wong, R.K.
After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.
Segregation of In to dislocations in InGaN
Horton, Matthew K.; Rhode, Sneha; Sahonta, Suman-Lata; Kappers, Menno J.; Haigh, Sarah J.; Pennycook, Timothy J.; Humphreys, Colin J.; Dusane, Rajiv O.; Moram, Michelle A.
.; Fischer, A. J.; Thaler, G.; Banas, M. A. Effect of dislocation density on efficiency droop in GaInN?GaN light-emitting diodes. Applied Physics Letters 2007, 91, 231114 DOI: 10.1063/1.2822442. (3) Schubert, M. F.; Xu, J.; Kim, J. K.; Schubert, E. F.; Kim... , M. H.; Yoon, S.; Lee, S. M.; Sone, C.; Sakong, T.; Park, Y. Polarization-matched GaInN?AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Applied Physics Letters 2008, 93, 041102 DOI: 10.1063/1.2963029. (4) Hsu, J. W. P...
Surface Science Analysis of GaAs Photocathodes Following Sustained...
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Analysis of GaAs Photocathodes Following Sustained Electron Beam Delivery. Abstract: Degradation of the photocathode materials employed in photoinjectors represents a challenge for...
Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application
Ren, F.; Abernathy, C.R.; Pearton, S.J.; Lothian, J.R.; Wisk, P.W.; Fullowan, T.R.; Youngkai Chen (AT and T Bell Labs., Murray Hill, NJ (United States)); Yang, L.W.; Fu, S.T.; Brozovich, R.S. (General Electric Co., Syracuse, NY (USSR))
As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBT's) for microwave applications, InGaP/ GaAs HBT's with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) are demonstrated with excellent dc, RF, and microwave performance. As previously reported, with a 700-[angstrom]-thick base layer (135-[Omega]/[open square] sheet resistance), a dc current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2 [times] 5-[mu]m[sup 2] emitter area device. A device with 12 cells, each consisting of a 2 [times] 15-[mu] m[sup 2] emitter area device for a total emitter area of 360 [mu] m[sup 2], was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50%.
High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: firstname.lastname@example.com [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)
In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.
Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy
Schubert, F. [NaMLab gGmbH, N÷thnitzer Stra▀e 64, 01187 Dresden (Germany); Merkel, U.; Schmult, S. [TU Dresden, Institute of Semiconductors and Microsystems, N÷thnitzer Stra▀e 64, 01187 Dresden (Germany); Mikolajick, T. [NaMLab gGmbH, N÷thnitzer Stra▀e 64, 01187 Dresden (Germany); TU Dresden, Institute of Semiconductors and Microsystems, N÷thnitzer Stra▀e 64, 01187 Dresden (Germany)
Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate.
Structure and phase transformation behaviour of electroless Ni-P composite coatings
Balaraju, J.N. [Surface Engineering Division, National Aerospace Laboratory, Bangalore 560017 (India)]. E-mail: email@example.com; Narayanan, T.S.N. Sankara [National Metallurgical Laboratory, Madras Centre, CSIR Complex Taramani, Chennai 600113 (India)]. E-mail: email@example.com; Seshadri, S.K. [Department of Metallurgical Engineering, Indian Institute of Technology Madras, Chennai 600036 (India)]. E-mail: email@example.com
This paper addresses the structural characteristics and phase transformation behaviour of plain electroless Ni-P coating and electroless Ni-P-Si{sub 3}N{sub 4}, Ni-P-CeO{sub 2} and Ni-P-TiO{sub 2} composite coatings. The X-ray diffraction patterns of electroless Ni-P-Si{sub 3}N{sub 4}, Ni-P-CeO{sub 2} and Ni-P-TiO{sub 2} composite coatings are very similar to that of plain electroless Ni-P coating, both in as plated and heat-treated conditions. Selected area electron diffraction (SAED) patterns obtained on the Ni-P matrix of Ni-P-Si{sub 3}N{sub 4}, Ni-P-CeO{sub 2} and Ni-P-TiO{sub 2} composite coatings exhibit diffuse ring patterns resembling the one obtained for plain electroless Ni-P coating. Phase transformation behaviour studied by differential scanning calorimetry (DSC) indicates that the variation in crystallization temperature and the energy evolved during crystallization of plain electroless Ni-P coating and electroless Ni-P-Si{sub 3}N{sub 4}, Ni-P-CeO{sub 2} and Ni-P-TiO{sub 2} composite coatings is not significant. The study concludes that incorporation of Si{sub 3}N{sub 4}, CeO{sub 2} and TiO{sub 2} particles in the Ni-P matrix does not have any influence on the structure and phase transformation behaviour of electroless Ni-P coatings.
Electron Density Distributions Calculated for the Nickel Sulfides Millerite, Vaesite, and Heazlewoodite and Nickel Metal: A Case for the Importance of Ni-Ni Bond Paths for
Downs, Robert T.
Electron Density Distributions Calculated for the Nickel Sulfides Millerite, Vaesite, and Heazlewoodite and Nickel Metal: A Case for the Importance of Ni-Ni Bond Paths for Electron Transport G. V. Gibbs's)) have been calculated for the bonded interactions comprising the nickel sulfide minerals millerite, Ni
Ferromagnetic semiconductors based upon AlGaP M. E. Overberg,a)
Hebard, Arthur F.
band-gap ternary InGaP, which is lattice matched to GaAs. An immediate application of the DMS, with its wide band-gap binary GaP, AlP and ternary InGaP, AlGaP, AlInP components, is used for devices
Radiation response of single and dual junction p{sup +}n InGaP/GaAs space solar cells
Walters, R.J.; Xapsos, M.A.; Summers, G.P. [Naval Research Lab., Washington, DC (United States); Cotal, H.L.; Messenger, S.R. [SFA, Inc., Largo, MD (United States)
The radiation response of single and dual-junction p{sup +}n InGaP/GaAs solar cells is studied. The degradation mechanisms of single-junction InGaP cells are identified, and characteristic degradation curves in terms of displacement damage dose are calculated. The response of dual-junction cells is presented, and the response of each sub-cell is discussed. The cell response is compared with those of other technologies. The effect of current injection on irradiated InGaP cell is presented.
DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs
Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.
The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.
Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures
Goyal, Nitin, E-mail: email@example.com [Carinthian Tech Research CTR AG, Europastra▀e 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria); Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway); Fjeldly, Tor A. [Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)
In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.
Free-standing AlxGa1-xAs heterostructures by gas-phase etching of germanium
As compounds encompassing low aluminum content AlGaAs, InGaAs, InGaP, etc. , typi- cally, a sacrificial Al
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
Killat, N., E-mail: email@example.com, E-mail: firstname.lastname@example.com; Montes Bajo, M.; Kuball, M., E-mail: firstname.lastname@example.com, E-mail: email@example.com [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; ųzg³r, ▄.; Morkoń, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)
To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.
Anomalous codeposition of Fe-Ni alloys and Fe-Ni-SiO{sub 2} composites under potentiostatic conditions: Experimental study and mathematical model
Ramasubramanian, M.; Popova, S.N.; Popov, B.N.; White, R.E. [Univ. of South Carolina, Columbia, SC (United States). Dept. of Chemical Engineering; Yin, K.M. [Yuan-Ze Inst. of Tech., Taoyuan (Taiwan, Province of China)
A mathematical model has been developed to describe the electrodeposition of Fe-Ni alloys and Fe-Ni-SiO{sub 2} composites under potentiostatic conditions. This model can be used to predict the polarization behavior, partial current densities, and alloy composition of each of the components as a function of the applied potential. Fe-Ni-SiO{sub 2} samples were deposited on platinum rotating disk electrodes from sulfate electrolytes under potentiostatic conditions, and the results obtained were compared to the model. The model predictions were found to agree well with the experimental observations for the Fe-Ni and Fe-Ni-SiO{sub 2} systems.
Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat
Shepelyansky, Dima
Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given
GROWTH OF GaN ON POROUS SiC AND GaN SUBSTRATES C. K. Inoki and T. S. Kuan
Feenstra, Randall
1 GROWTH OF GaN ON POROUS SiC AND GaN SUBSTRATES C. K. Inoki and T. S. Kuan Department of Physics Institute, University of Illinois, Urbana, IL 61801 ABSTRACT We have studied the growth of GaN on porous SiC and GaN substrates, employing both plasma-assisted molecular beam epitaxy (PAMBE) and metalorganic
GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector
Fan, Shanhui
GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg 14 December 2007; published online 11 January 2008 GaN-based two-dimensional 2D surface-emitting photonic crystal PC lasers with AlN/GaN distributed Bragg reflectors are fabricated and demonstrated
Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates
Manfra, Michael J.
Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures-dimensional arrays Appl. Phys. Lett. 100, 203117 (2012) Partially filled intermediate band of Cr-doped GaN films Appl at telecommunication wavelengths J. Appl. Phys. 111, 093721 (2012) GaN epitaxy on Cu(110) by metal organic chemical
Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures
Luryi, Serge
Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In
Free excitons in wurtzite GaN A. V. Rodina*
Nabben, Reinhard
Free excitons in wurtzite GaN A. V. Rodina* I. Physics Institute, Justus Liebig University in wurtzite GaN. Using polarization-dependent measurements we were able to resolve the fine-structure energy these data a theory is developed for the exciton energy structure in hexagonal semiconductors with wurtzite
Jorge Estevez, Humberto Angel
was measured by the Cox-Strack method. Ohmic contacts based on the Zn/Pd system were developed. The Zn(350A)/Pd(IOOA)/p-GaP and Zn(350A)/Pd(IOOA)/p-GaP gave rather high values of the contact resistivity, 3-8xl 0-4 f2CM2. An improvement in the contact...
The development of integrated chemical microsensors in GaAs
Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.
Jorge Estevez, Humberto Angel
was measured by the Cox-Strack method. Ohmic contacts based on the Zn/Pd system were developed. The Zn(350A)/Pd(IOOA)/p-GaP and Zn(350A)/Pd(IOOA)/p-GaP gave rather high values of the contact resistivity, 3-8xl 0-4 f2CM2. An improvement in the contact...
Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P)
Wadley, P.
quaternary diluted magnetic semiconductor (Ga,Mn)(As,P) as aIn diluted magnetic semiconductors such as (Ga,Mn)As, whichquaternary diluted magnetic semiconductors such as (Ga,Mn)(
Amorphization Processes in Au Ion Irradiated GaN at 150 - 300...
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Processes in Au Ion Irradiated GaN at 150 - 300 K. Amorphization Processes in Au Ion Irradiated GaN at 150 - 300 K. Abstract: Epitaxial single-crystal gallium nitride (GaN) films...
Damage Evolution in GaN Under MeV Heavy Ion Implantation. | EMSL
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Evolution in GaN Under MeV Heavy Ion Implantation. Damage Evolution in GaN Under MeV Heavy Ion Implantation. Abstract: Damage evaluation processes in patterned GaN implanted by 3...
Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates
Liliental-Weber, Z.; Ni, X.; Morkoc, H.
Overgrown GaN Layers Grown on Non-polar Substrates Z.in GaN layers grown on polar and non-polar substrates areGaN-based layers, since they are grown heteroepitaxially on foreign substrates (
Imaging of InGaN inhomogeneities using visible apertureless near-field scanning optical microscope
Stebounova, Larissa V.; Romanyuk, Yaroslav E.; Chen, Dongxue; Leone, Stephen R.
InGaN dots deposited on a GaN substrate. 44 In that work, itGaN buffer layer is grown after the nitridation of the substrate.
Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction
coefficients between GaN and the substrate. Understandingpenetrate both the GaN layer and the substrate. Two samplespattern from the GaN layer and the substrate on a charge-
Modified Ni-Cu catalysts for ethanol steam reforming
Dan, M.; Mihet, M.; Almasan, V.; Borodi, G. [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath Street, 400293, Cluj-Napoca (Romania)] [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath Street, 400293, Cluj-Napoca (Romania); Katona, G.; Muresan, L. [Univ. Babes Bolyai, Fac. Chem. and Chem. Eng.,11 Arany Janos, 400028, Cluj-Napoca (Romania)] [Univ. Babes Bolyai, Fac. Chem. and Chem. Eng.,11 Arany Janos, 400028, Cluj-Napoca (Romania); Lazar, M. D., E-mail: email@example.com [65-103 Donath Street (Romania)
Three Ni-Cu catalysts, having different Cu content, supported on ?-alumina were synthesized by wet co-impregnation method, characterized and tested in the ethanol steam reforming (ESR) reaction. The catalysts were characterized for determination of: total surface area and porosity (N{sub 2} adsorption - desorption using BET and Dollimer Heal methods), Ni surface area (hydrogen chemisorption), crystallinity and Ni crystallites size (X-Ray Diffraction), type of catalytic active centers (Hydrogen Temperature Programmed Reduction). Total surface area and Ni crystallites size are not significantly influenced by the addition of Cu, while Ni surface area is drastically diminished by increasing of Cu concentration. Steam reforming experiments were performed at atmospheric pressure, temperature range 150-350░C, and ethanol - water molar ration of 1 at 30, using Ar as carrier gas. Ethanol conversion and hydrogen production increase by the addition of Cu. At 350░C there is a direct connection between hydrogen production and Cu concentration. Catalysts deactivation in 24h time on stream was studied by Transmission Electron Microscopy (TEM) and temperature-programmed reduction (TPR) on used catalysts. Coke deposition was observed at all studied temperatures; at 150░C amorphous carbon was evidenced, while at 350░C crystalline, filamentous carbon is formed.
Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors
Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei, E-mail: email@example.com [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.
Elastic properties of Pu metal and Pu-Ga alloys
Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A
We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.
Nucleation of GaN/AlN quantum dots
Adelmann, C; Daudin, B; Oliver, R; Briggs, G; Rudd, R
We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, bidimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, the height and the density of the islands increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth [R. E. Rudd et al., Phys. Rev. Lett. 90, 146101 (2003)].
Impact of GaN cap on charges in Al?O?/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations
?apajna, M., E-mail: email@example.com; Jurkovi?, M.; Vßlik, L.; HaÜ?Ēk, Ŗ.; GreguÜovß, D.; KuzmĒk, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, D·bravskß cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, E.-M. [Ferdinand-Braun-Institut, Leibniz Institut f³r H÷chstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Hashizume, T. [Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, 060-0814 Sapporo, Japan and JST-CREST, 102-0075 Tokyo (Japan)
Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al?O?/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (?5¢8?ū?10╣▓eV?╣?cm?▓) was found at trap energies ranging from EC-0.5 to 1?eV for structure with GaN cap compared to that (D{sub it}???2¢3?ū?10╣▓eV?╣?cm?▓) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement between experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10╣│eV?╣?cm?▓) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about EC-0.6?eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al?O? thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.
First principles phase diagram calculations for the wurtzitestructure systems AlN--GaN, GaN--InN, and AlN--InN
Burton, Benjamin P.
First principles phase diagram calculations for the wurtziteŁstructure systems AlN--GaN, GaN for the wurtziteŁstructure quasibinary systems AlN--GaN, GaN--InN, and AlN--InN. Cluster expansion Hamiltonians. Miscibility gaps are predicted for all three quasibinaries, with consolute points, #X C , T C #, for AlN--GaN
AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers
Jiang, Hongxing
AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers Z. Y. Fana 66506-2601 Received 23 November 2005; accepted 5 January 2006; published online 16 February 2006 AlGaN/GaN/AlN quantum-well field-effect transistors have been demonstrated. By replacing a semi-insulating GaN epilayer
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by Plasma-Enhanced ALD
Paris-Sud XI, Universitķ de
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by Plasma-Enhanced ALD R(0)438782894 Abstract - In this work we evaluate the influence of the Al2O3 ALD deposition technique on AlGaN/GaN MIS drastically reduced with a measured average of 1e-11 A/mm for a drain-source bias of 5V. 1. Introduction AlGaN
Low Phase-Noise 5 GHz AlGaN/GaN HEMT Oscillator Integrated with BaxSr1-xTiO3 Thin Films
York, Robert A.
Low Phase-Noise 5 GHz AlGaN/GaN HEMT Oscillator Integrated with BaxSr1-xTiO3 Thin Films Hongtao Xu -- A C-band MMIC oscillator in GaN HEMT technology with BaxSr1-xTiO3 (BST) film capacitors integrated with the common gate HEMT to generate negative resistance. The oscillator, based on AlGaN/GaN HEMT with 0.7um gate
Large linear magnetoresistance in a GaAs/AlGaAs heterostructure
Aamir, Mohammed Ali, E-mail: firstname.lastname@example.com; Goswami, Srijit, E-mail: firstname.lastname@example.com; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)
We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.
Sidewall passivation for InGaN/GaN nanopillar light emitting diodes
Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: firstname.lastname@example.com [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: firstname.lastname@example.com [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.
Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings
Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.
Single photon emission from site-controlled InGaN/GaN quantum dots
Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: email@example.com [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: firstname.lastname@example.com [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%¢25% exhibited single photon emission at 10?K.
High internal and external quantum efficiency InGaN/GaN solar cells
Matioli, Elison; Neufeld, C. J.; Iza, Michael; Cruz, S. C.; Al-Heji, Ali A.; Chen, Xu; Farrell, Rober M.; Keller, Stacia; DenBaars, Steven; Mishra, U. K.; Nakamura, Shuji; Speck, J. S.; Weisbuch, Claude
High internal and external quantum efficiency GaN/InGaN solar cells are demonstrated. The internal quantum efficiency was assessed through the combination of absorption and external quantum efficiency measurements. The measured internal quantum efficiency, as high as 97%, revealed an efficient conversion of absorbed photons into electrons and holes and an efficient transport of these carriers outside the device. Improved light incoupling into the solar cells was achieved by texturing the surface. A peak external quantum efficiency of 72%, a fill factor of 79%, a short-circuit current density of 1.06?mA/cm{sup 2} , and an open circuit voltage of 1.89 V were achieved under 1 sun air-mass 1.5 global spectrumillumination conditions.
Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
Wetzel, Christian M.
Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared
Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes
Wetzel, Christian M.
Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase
Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
Seo, Kwang Seok
, such as current collapse (power slump), the self-heating effect and the power scaling problem. In this paper, we have studied the self-heating effect using pulsed current-voltage (IV) and current- voltage self-heating affects the AlGaN/GaN HEMT's operation. It can be thought that a reason for the power
Self-Heating Effects in GaN/AlGaN Heterostructure Field-Effect Transistors and Device Structure Optimization
Self-Heating Effects in GaN/AlGaN Heterostructure Field-Effect Transistors and Device Structure time, performance of these devices has been limited by self-heating and other problems associated-3]. At the same time, performance of these devices has been limited by self-heating and other problems associated
Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip
Hohls, Frank
by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsšAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving
Reconstructions of GaN,,0001... and ,,0001... surfaces: Ga-rich metallic A. R. Smith and R. M. Feenstraa)
wurtzite material.1Ł9 A common theme regarding the growth of these surfaces in the absence of hydrogen and elec- tronic properties of two reconstructions for wurtzite GaN: the 1 1 structure of the GaN 0001
Electronic band-structure engineering of GaAs/AlxGa1(xAs quantum well superlattices with substructures
Cao, Wenwu
Electronic band-structure engineering of GaAs/AlxGa1(xAs quantum well superlattices investigation on the band structures of electrons in both infinite and finite semiconductor quantum well of these two materials, narrower passbands and/or broad stopbands can be obtained for electrons with energy
OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT
Honsberg, Christiana
on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus
Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors
Johnson, Derek Wade
the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...
Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach
Itoh, Tatsuo
Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high
Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study
Khare, Sanjay V.
Diffusion of a Ga adatom on the GaAs(001)c(4ū4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features
Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
Demir, Hilmi Volkan
Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. ® 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has
Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser
Chow, W.W.; Schneider, R.P. Jr.; Lott, J.A.; Choquette, K.D. (Sandia National Laboratories, Albuquerque, New Mexico 87185-0350 (United States))
The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.
Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility TransistorsĀ
Johnson, Derek Wade
the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...
Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate
Kumar, Praveen; Kuyyalil, Jithesh; Shivaprasad, S. M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, 560 064 Bangalore (India)
High quality GaN is grown by plasma assisted molecular beam epitaxy on Ga induced superstructural phases of Si(111)7x7. Three stable surface phases induced by Ga adsorption, viz., (1x1), (6.3x6.3), and ({radical}3x{radical}3)R30 deg., are employed as templates to grow epitaxial (0001) GaN thin films. GaN grown on Si({radical}3x{radical}3)R30 deg. -Ga is found to be highly crystalline with intense (0002) x-ray diffraction and photoluminescence peaks with low full width at half maximum, low surface roughness, and stoichiometric surface composition. The high quality of these GaN films formed at a low temperature of 400 deg. C is explained by the integral (x2) lattice matching between the unit cell of GaN and the ({radical}3x{radical}3) phase. The experiments demonstrate a plausible approach of adsorbate induced surface modifications as templates for III-V hetroepitaxy on Si surfaces.
High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
Lu, Bin
In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...
Mitigation of Sulfur Poisoning of Ni/Zirconia SOFC Anodes by Antimony and Tin
Marina, Olga A.; Coyle, Christopher A.; Engelhard, Mark H.; Pederson, Larry R.
Surface Ni/Sb and Ni/Sb alloys were found to efficiently minimize the negative effects of sulfur on the performance of Ni/zirconia anode-supported solid oxide fuel cells (SOFC). Prior to operating on fuel gas containing low concentrations of H2S, the nickel/zirconia anodes were briefly exposed to antimony or tin vapor, which only slightly affected the SOFC performance. During the subsequent exposures to 1 and 5 ppm H2S, increases in anodic polarization losses were minimal compared to those observed for the standard nickel/zirconia anodes. Post-test XPS analyses showed that Sb and Sn tended to segregate to the surface of Ni particles, and further confirmed a significant reduction of adsorbed sulfur on the Ni surface in Ni/Sn and Ni/Sb samples compared to the Ni. The effect may be the result of weaker sulfur adsorption on bimetallic surfaces, adsorption site competition between sulfur and Sb or Sn on Ni, or other factors. The use of dilute binary alloys of Ni-Sb or Ni-Sn in the place of Ni, or brief exposure to Sb or Sn vapor, may be effective means to counteract the effects of sulfur poisoning in SOFC anodes and Ni catalysts. Other advantages, including suppression of coking or tailoring the anode composition for the internal reforming, are also expected.
Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets
Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Casta±o, Manuel, E-mail: email@example.com [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)
This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.
Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well
Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.
Electrodeposition and corrosion resistance of Ni-W-B coatings
Steffani, C.P.; Dini, J.W. [Lawrence Livermore National Lab., CA (United States). Manufacturing and Materials Engineering Div.; Groza, J.R.; Palazoglu, A. [Univ. of California, Davis, CA (United States). Dept. of Chemical Engineering and Materials Science
A ternary nickel-base alloy Ni-W-B has been developed for surface corrosion and wear resistance to replace chromium plating, which uses environmentally hazardous solutions. The deposition conditions used an alkaline bath and insoluble anodes. The as-deposited alloy typically contains 40 wt% W and 1 wt% B and has an amorphous or partially amorphous structure. These deposits compare favorably with hexavalent chromium deposits in throwing power, color uniformity, and reflectivity. The corrosion resistance of Ni-W-B alloy was compared with hexavalent chromium and electroless nickel deposits in a variety of acids, including hydrochloric, sulfuric, fluoroboric, and phosphoric. In all cases, best results were obtained with the Ni-W-B deposits.
Hydrotreatment of Athabasca bitumen derived gas oil over Ni-Mo, Ni-W, and Co-Mo catalysts
Diaz-Real, R.A.; Mann, R.S.; Sambi, I.S. (Univ. of Ottawa, Ontario (Canada). Dept. of Chemical Engineering)
The hydrotreatment of Athabasca bitumen derived heavy gas oil containing 4.08% S and 0.49% N was carried out in a trickle bed reactor over Ni-W, Ni-Mo, and Co-Mo catalysts supported on zeolite-alumina-silica at 623-698 K, LHSV of 1-4, gas flow rate 890 m[sup 3][sub H2]/m[sup 3][sub oil] (5,000 sef/bbl), and pressure of 6.89 MPa. Analyses for viscosity, density, aniline point, ASTM mid boiling point distillation, C/H ratio, and percentage of N and S in the final product were carried out to characterize the product oil. The amounts of N and S removed indicated the hydrodenitrogenation and hydrodesulfurization activity of the catalysts. Results of zeolite-alumina-silica-supported catalysts are compared to those obtained with commercially available Ni-Mo, Ni-W, and Co-Mo on [gamma]-alumina. Ni-Mo supported on zeolite-alumina-silica was most active and could remove as much as 99 % S and 89% N present in the oil at 698 K. The data for HDN and HDS fitted the pseudo first order model. The kinetic model is described in detail.
Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a
Peinke, Joachim
by metal- organic vapor phase epitaxy on a n-type GaAs substrate. The red-emitting laser employs an InGaP
Partially filled intermediate band of Cr-doped GaN films
Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)
We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.
Electrochromic devices embodying W oxide/Ni oxide tandem films
Azens, A.; Vaivars, G.; Veszelei, M.; Kullman, L.; Granqvist, C. G.
Six-layer electrochromic devices of indium tin oxide (ITO)/NiO{sub x}H{sub y}/WO{sub 3}/ZrP-electrolyte/WO{sub 3}/ITO were made by reactive dc magnetron sputtering and lamination. The WO{sub 3} layer between the acidic ZrP-based electrolyte and the NiO{sub x}H{sub y} layer served as optically passive protective layer. The optical inactivity of the protective layer could be understood from arguments based on electron density of states. {copyright} 2001 American Institute of Physics.
A Hydrogen-Evolving Ni(P2N2)2 Electrocatalyst Covalently Attached...
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A Hydrogen-Evolving Ni(P2N2)2 Electrocatalyst Covalently Attached to a Glassy Carbon Electrode: Preparation, Characterization, A Hydrogen-Evolving Ni(P2N2)2 Electrocatalyst...
SciTech Connect: Neutron Scattering of CeNi at the SNS-ORNL:...
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Conference: Neutron Scattering of CeNi at the SNS-ORNL: A Preliminary Report Citation Details In-Document Search Title: Neutron Scattering of CeNi at the SNS-ORNL: A Preliminary...
Proton Delivery and Removal in [Ni(PR2NR?2)2]2+ Hydrogen...
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
Delivery and Removal in Ni(PR2NR?2)22+ Hydrogen Production and Oxidation Catalysts. Proton Delivery and Removal in Ni(PR2NR?2)22+ Hydrogen Production and Oxidation...
Dynamical deformation effects in subbarrier fusion of $^{64}$Ni+$^{132}$Sn
A. S. Umar; V. E. Oberacker
We show that dynamical deformation effects play an important role in fusion reactions involving the $^{64}$Ni nucleus, in particular the $^{64}$Ni+$^{132}$Sn system. We calculate fully microscopic interaction potentials and the corresponding subbarrier fusion cross sections.
Study of Martensitic Phase transformation in a NiTiCu Thin Film...
Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)
Martensitic Phase transformation in a NiTiCu Thin Film Shape Memory Alloy Using Photoelectron Emission Microscopy. Study of Martensitic Phase transformation in a NiTiCu Thin Film...
Bulk Glass Formation in Eutectic of La-Cu-Ni-Al Metallic Alloys
Zhang, Yong
A eutectic in La-rich La-Cu?.?Ni?.?-Al alloys was determined by studying the melting behaviors and the microstructure observations. The microstructures of the La-Cu-Ni-Al alloys prepared by ...
Origin of transverse magnetization in epitaxial Cu/Ni/Cu nanowire arrays
Ciria, M.
The patterning-induced changes in the magnetic anisotropy and hysteresis of epitaxial (100)-oriented Cu/Ni(9, 10, 15 nm)/Cu planar nanowires have been quantified. When the Ni films are patterned into lines, strain relaxation ...

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