text:
|Numéro de publication
|Type de publication
|Numéro de demande
|Date de publication
|20 juin 2002
|Date de dépôt
|18 déc. 2000
|Date de priorité
|10 aoűt 2000
|Autre référence de publication
|Numéro de publication
|Bulent Basol
|Cessionnaire d'origine
|Bulent Basol
|Exporter la citation
|BiBTeX, EndNote, RefMan
|Référencé par (14), Classifications (26), Événements juridiques (6)
|Liens externes: USPTO, Cession USPTO, Espacenet
[0001] The present invention relates generally to a semiconductor plating method and apparatus. More particularly, the present invention is directed to a method and apparatus that creates a differential between additive adsorbed on a top surface of a workpiece and additive adsorbed within a cavity portion of the workpiece using an external influence to enhance plating of a conductive material in the cavity portion of the workpiece.
[0002] There are many steps required in manufacturing multi-level integrated circuits (IC). Such steps include depositing conductive and insulator materials on a semiconductor wafer or substrate followed by full or partly removal of these materials using photo-resist patterning, etching, and the like. After photolithography, patterning and etching steps, the resulting surface is generally non-planar as it contains many cavities or features such as vias, lines, trenches, channels, bond-pads, and the like that come in a wide variety of dimensions and shapes. These features are typically filled with a highly conductive metal material before additional processing steps such as etching and/or chemical mechanical polishing (CMP) is/are performed. Accordingly, a low resistance interconnection structure is formed between the various levels/sections of the IC.
[0003] Copper (Cu) is quickly becoming the preferred material for interconnections in ICs because of its low electrical resistively and high resistance to electro-migration. Electrodeposition is one of the most popular methods for depositing Cu into the features on the substrate surface.
[0004] As can be expected, there are many different designs of Cu plating systems that have been used in this industry. For example, U.S. Pat. No. 5,516,412 issued on May 14, 1996, to Andricacos et al. discloses a vertical paddle plating cell that is designed to electrodeposit a film on a flat article. Next, U.S. Pat. No. 5,985,123 issued on Nov. 16, 1999, to Koon discloses yet another vertical electroplating apparatus, which purports to overcome the non-uniform deposition problems associated with varying substrate sizes. Further, U.S. Patent No. 5,853,559 issued on Dec. 29, 1998, to Tamaki et al. discloses an electroplating apparatus that minimizes waste of the plating electrolyte and accomplishes high recovery of the electrolyte.
[0005] During the Cu electrodeposition process, specially formulated plating solutions or electrolyte are used. These solutions or electrolyte contain ionic species of Cu and additives to control the texture, morphology, and the plating behavior of the deposited material. Additives are needed to make the deposited layers smooth and somewhat shiny.
[0006] There are many types of Cu plating solution formulations, some of which are commercially available. One such formulation includes Cu-sulfate (CUSO4) as the copper source (see James Kelly et al., Journal of The Electrochemical Society, Vol. 146, pages 2540-2545, (1999)) and includes water, sulfuric acid (H2SO4), and a small amount of chloride ions. As is well known, other chemicals can be added to the Cu plating solution to achieve desired properties of the deposited material.
[0007] The additives in the Cu plating solution can be classified under several categories such as suppressors, levelers, brighteners, grain refiners, wetting agents, stress-reducing agents, accelerators, etc. In many instances, different classifications are often used to describe similar functions of these additives. Today, solutions used in electronic applications, particularly in manufacturing ICs, contain simpler additives consisting of two-component two-ingredient packages (e.g., see Robert Mikkola and Linlin Chen, "Investigation of the Roles of the Additive Components for Second Generation Copper Electroplating Chemistries used for Advanced Interconnect Metallization", Proceedings of the International Interconnect Technology Conference, pages 117-119, Jun. 5-7, 2000). These formulations are generically known as suppressors and accelerators.
[0008] Suppressors are typically polymer formulated from polyethylene glycol-PEG or polypropylene glycol-PPG and is believed to attach themselves to the substrate surface at high current density regions, thereby forming a high resistance film and suppressing the material deposited thereon. Accelerators are typically organic disulfides that enhance Cu deposition on portions of the substrate surface where they are adsorbed. The interplay between these two additives and possibly the chloride ions determines the nature of the Cu deposit.
[0009] The following figures are used to more fully describe the conventional electrodeposition method and apparatus. FIG. 1 illustrates a perspective view of a cross-section of a substrate 3 having an insulator 2 formed thereon. Using conventional etching techniques, features such as a row of small vias 4 a and a wide trench 4 b are formed on the insulator 2 and the substrate 3. In this example, the vias 4 a are narrow and deep; in other words, they have high aspect ratios (i.e., their depth to width ratio is large). Typically, the widths of the vias 4 a are sub-micron. The trench 4 b, on the other hand, is typically wide and has a small aspect ratio. In other words, the width of the trench 4 b may be five to fifty times or more greater than its depth.
[0010]FIGS. 2a-2 c illustrate a conventional method for filling the features with Cu. FIG. 2a illustrates a cross sectional view of the substrate 3 in FIG. 1 having various layers disposed thereon. For example, this figure illustrates the substrate 3 and the insulator 2 having deposited thereon a barrier/glue or adhesion layer 5 and a seed layer 6. The barrier layer 5 may be tantalum, nitrides of tantalum, titanium, tungsten, or TiW, etc., or combinations of any other materials that are commonly used in this field. The barrier layer 5 is generally deposited using any of the various sputtering methods, by chemical vapor deposition (CVD), or by electroless plating methods. Thereafter, the seed layer 6 is deposited over the barrier layer 5. The seed layer 6 material may be copper or copper substitutes and may be deposited on the barrier layer 5 using various sputtering methods, CVD, or electroless deposition or combinations thereof.
[0011] In FIG. 2b, after depositing the seed layer 6, a conductive material 7 (e.g., copper layer) is generally electrodeposited thereon from a suitable acidic or non-acidic plating bath or bath formulation. During this step, an electrical contact is made to the Cu seed layer 6 and/or the barrier layer 5 so that a cathodic (negative) voltage can be applied thereto with respect to an anode (not shown). Thereafter, the Cu material 7 is electrodeposited over the substrate surface using the specially formulated plating solutions, as discussed above. By adjusting the amounts of the additives, such as the chloride ions, suppressor/inhibitor, and the accelerator, it is possible to obtain bottom-up Cu film growth in the small features.
[0012] The Cu material 7 completely fills the via 4 a and is generally uniform in the large trench 4 b, but does not completely fill the trench 4 b because the additives that are used are not operative in large features. For example, it is believed that the bottom up deposition into the via 4 a occurs because the suppressor/inhibitor molecules attach themselves to the top of the via 4 a to suppress the material growth thereabouts. These molecules can not effectively diffuse to the bottom surface of the via 4 a through the narrow opening. Preferential adsorption of the accelerator on the bottom surface of the via 4 a results in faster growth in that region, resulting in bottom-up growth and the Cu deposit profile as shown in FIG. 2b. Without the appropriate additives, Cu can grow on the vertical walls as well as the bottom surface of the via 4 a at the same rate, thereby causing defects such as seams and/or voids.
[0013] Adsorption characteristics of the suppressor and accelerator additives on the bottom surface of the large trench 4 b is not expected to be any different than the adsorption characteristics on the top surface of the field regions 8 of the substrate. Therefore, the Cu thickness t1 at the bottom surface of the trench 4 b is about the same as the Cu thickness t2 over the field regions 8.
[0014] As can be expected, to completely fill the trench 4 b with the Cu material 7, further plating is required. FIG. 2c illustrates the resulting structure after additional Cu plating. In this case, the Cu thickness t3 over the field regions 8 is relatively large and there is a step s1 from the field regions 8 to the top of the Cu material 7 in the trench 4 b. For IC applications, the Cu material 7 needs to be subjected to CMP or other material removal process so that the Cu material 7 as well as the barrier layer 5 in the field regions 8 are removed, thereby leaving the Cu material 7 only within the features. These removal processes are known to be quite costly.
[0015] Thus far, much attention has been focused on the development of Cu plating chemistries and plating techniques that yield bottom-up filling of small features on substrates. This is necessary because, as mentioned above, lack of bottom-up filling can cause defects in the small features. As part of these development efforts, it was discovered that the filling behavior of the small features could be affected not only by the solution chemistry, but also by the type of the power supply used for electrodeposition.
[0016] Recent studies suggest that it might be preferable to use pulse or pulse-reverse plating methods to deposit defect free Cu into the small vias (e.g., U.S. Pat. No. 5,972,192 issued to Dubin et al. on Oct. 26, 1999, and Gandikota et al. "Extension of Copper Plating to 0.13 um Nodes by Pulse-Modulated Plating", Proceedings of the International Interconnect Technology Conference, pages 239-241, Jun. 5-7, 2000). In the pulse-reverse plating process, a cathodic voltage pulse rather than a cathodic DC voltage is applied to the substrate surface. After a short period of plating during the cathodic pulse, the polarity of the voltage is reversed for a brief period causing electrochemical etching from the deposited material. Plating and etching cycles are then repeated until the small features are filled with high quality Cu. A recent study (e.g., C. H. Hsieh et al., "Film Properties and Surface Profile after Gap Fill of Electrochemically Deposited Cu Films by DC and Pulse Reverse Processes", Proceedings of the International Interconnect Technology Conference, pages 182-184, Jun. 5-7, 2000), shows that the filling of the vias is controlled mainly by the additive diffusion when the DC process is used, whereas it is mainly controlled by additive adsorption when a pulse-reverse process is used.
[0017] As described above, the attention in the semiconductor industry has mainly been concentrated on filling the various features on semiconductor wafers with Cu. Both DC and pulsed power supplies have been used in the deposition of these Cu films. Filling properties of Cu into small features was found to be a strong function of the type of the power supply used. Although the exact roles of the plating solution additives and their interaction with the applied voltage waveforms are not well understood, it is clear that the kinetics of the additive adsorption and diffusion processes influence the way metals deposit on non-planar substrate surfaces.
[0018] As mentioned above, special bath formulations and pulse plating processes have been developed to obtain bottom-up filling of the small features. However, these techniques have not been found effective in filling the large features. In large features, the additives can freely diffuse in and out of them. The use of standard pulse plating techniques in conjunction with the commonly used additive systems containing chloride ions, accelerators and suppressors/inhibitors do not yield accelerated growth from the bottom surface of the features where the width of the feature is considerably larger than its depth. The growth of Cu in such features is conformal and the film thickness deposited on the bottom surface of the large features is approximately the same as that deposited on the field regions.
[0019] Methods and apparatus to achieve accelerated bottom-up plating in small as well as large features on a substrate would be invaluable in terms of process efficiency and cost since such a process would yield a Cu deposit that is generally planar as illustrated in FIG. 3. The Cu thickness t5 over the field regions 8 in this example is smaller than the traditional case as shown in FIG. 2c, and the step height s2 would also be much smaller. Removal of the thinner Cu layer in FIG. 3 by CMP or other methods would be easier, providing important cost savings.
[0020] Others have previously recognized attractive features of a plated Cu structure such as the one shown in FIG. 3. For example, in a PCT application ("Electroplated Interconnection Structures on Integrated Circuit Chips", WO 98/27585, Jun. 25, 1998) researchers from International Business Machines Corporation state that the plating processes described therein produce super-filling of only the sub-micron size cavities when plating was carried out in a conventional plating cell. However, it also states that a further benefit could be realized when a cup plating cell is used as described in U.S. Pat. No. 4,339,319 issued on Jul. 13, 1982, to Aigo. In addition, when the substrate surface was held in contact with the meniscus of the electrolyte during plating in a cup plating cell, cavities of greatly different widths could be filled rapidly at the same rate yielding a structure similar to that shown in FIG. 3. The PCT application also mentions that superior performance of the meniscus plating approach was due to the higher concentration of the surface active additive molecules at the air-liquid interface.
[0021] In the co-pending U.S. application Ser. No. 09/201,928, entitled "Method and apparatus for electrochemical mechanical deposition", commonly owned by the assignee of the present invention, a technique is disclosed that achieves deposition of the conductive material into the cavities on the substrate surface while minimizing deposition on the field regions by polishing the field regions with a pad as the conductive material is deposited. The plating electrolyte in this application is supplied to the small gap between the pad and the substrate surface through a porous pad or through asparities in the pad.
[0022]FIG. 4 shows a schematic depiction of an electrochemical mechanical deposition apparatus that can be used for planar or near-planar Cu deposition on a semiconductor wafer. A carrier head 10 holds a semiconductor wafer 16 and provides an electrical lead 17 connected to the conductive portion of the wafer 16. The head 10 can be rotated clockwise or counter-clockwise about a first axis 10 b and can be moved in x, y, and z directions. A pad 18 is provided on top of an anode assembly 19, which pad 18 faces the wafer 16. An electrolyte 20 containing the plating material is applied to the wafer 16 surface using the anode assembly 19. The electrolyte 20 can be flowed through the holes/openings in the pad 18, which makes physical contact with the wafer 16 surface. The electrolyte 20 then flows in the narrow gap between the wafer 16 and the pad 18, eventually flowing over the edges of the pad 18 into a chamber 22 to be re-circulated (not shown) after cleaning/filtering/refurbishing. A second electrical lead 24 is connected to the anode assembly 19. Any other known method for providing the electric potentials to the anode assembly 19 and cathode wafer 16 can be used herein.
[0023] The anode assembly 19 can also be rotated around a second axis 10 c at controlled speeds in both the clockwise and counter-clockwise directions. It is also understood that axes 10 b and 10 c are substantially parallel to each other. The gap between the wafer 16 and the pad 18 is adjustable by moving the carrier head 10 in the z direction. When the wafer 16 surface and the pad 18 are in contact, the pressure that is exerted on the two surfaces can also be adjusted. The co-pending U.S. application Ser. No. 09/511,278, entitled "Pad Designs and Structures for a Versatile Materials Processing Apparatus", filed Feb. 23, 2000, describes various shapes and forms of the holes in the pad 8, through which the electrolyte flows to the wafer surface.
[0024] During operation, a potential is applied between the electrical lead 17 to the wafer 16 and the electrical lead 24 to the anode assembly 19, making the wafer 16 surface more negative than the anode assembly 19. The electrolyte 20 can be introduced to the pad 18 from a reservoir (not shown) located in proximity to the anode assembly 19. The anode assembly 19 can have an in-channel and holes that are made therein, which together provide a path for the electrolyte 20 to be fed to the gap between the pad 18 and the wafer 16.
[0025] Under applied potential, Cu plates out of the electrolyte 20 onto the wafer 16 surface. The moving pad 18 that is pushed against the wafer 16 surface at a controlled pressure minimizes accumulation of Cu over certain portions of the wafer 16 surface by polishing the same.
[0026] The pad 18 is preferably nonconductive, hard, porous, or perforated type material so that an electric field can pass through it, while preventing shorting between the anode assembly 19 and the cathode wafer 16. The spacing or gap between the pad 18 and the cathode wafer 16 may range from less than 1 micron up to 2 millimeter. The diameter or cross sectional length of the pad 18 and the wafer 16 may range from about 5 millimeter to over 300 millimeter. The larger the wafer 16 diameter, the larger the pad 18 diameter.
[0027] It is an object of the present invention to provide a method and apparatus that plates a conductive material on a substrate surface in a highly desirable manner.
[0028] It is another object of the present invention to provide a method and apparatus that plates a conductive material in both small and large features of a substrate surface with greater efficiency, cost-savings, and superior quality than prior art methods and apparatus.
[0029] It is a further object of the present invention to provide a method and apparatus that plates a conductive material in small and large features on a substrate surface using a mask having one or more opening therein.
[0030] It is yet another object of the present invention to provide a method and apparatus that plates a conductive material in small and large features while electrical power is locally pulsed on the substrate surface due to the movement of the opening(s) in the mask with respect to the substrate surface.
[0031] It is a further object of the present invention to provide a method and apparatus that removes additive that has been previously adsorbed onto the top surface portion of a workpiece in order to enhance the plating of a conductive material on a cavity feature surface portion of the workpiece that did not have previously adsorbed additive removed.
[0032] It is yet another object of the present invention to create a differential between additive adsorbed on a top surface of a workpiece and additive adsorbed within a cavity portion of the workpiece to enhance plating of a conductive material in the cavity portion of the workpiece.
[0033] The above objects of the invention, among others, taken alone or in combination, are achieved by the present invention, which provides an apparatus for, and a method of, plating a conductive material on the surface of a workpiece.
[0034] In one aspect of the method, an electrolyte solution with at least one additive disposed therein is applied over the workpiece, such that the additive becomes adsorbed onto the top portion and the cavity portion of the workpiece. An external influence is applied so that the additive adsorbed onto the top surface is removed, and plating of the conductive material take place before the additive fully re-adsorbs onto the top portion, thereby causing greater plating of the cavity portion relative to the top portion.
[0035] In another aspect of the method, an electrolyte solution with at least one additive disposed therein is applied over the workpiece, such that the additive becomes adsorbed onto the top portion and the cavity portion of the workpiece. An external influence is applied so that a differential in the amount of additive that is adsorbed on the top portion relative to the cavity portion is achieved. Plating takes place while the differential still exists, thereby causing greater plating of the cavity portion relative to the top portion.
[0036] In one aspect of the apparatus, a mask disposed between an anode and the workpiece and is movable with respect to the workpiece physically sweeps a top portion of the workpiece, thereby reducing additive adsorbed thereon, while additive adsorbed on a cavity portion remains. An anode that assists in creating an electric field between it and the workpiece is used to promote plating of the conductor within the electrolyte that is disposed over the workpiece.
[0037] In another aspect of the apparatus, the mask contains an open area that is used to help define where the electric field will exist, thus allowing greater control over where plating will occur on the workpiece.
[0038] These and other objects and advantages of the present invention will become apparent and more readily appreciated from the following detailed description of the presently preferred exemplary embodiments of the invention taken in conjunction with the accompanying drawings, of which:
[0039]FIG. 1 illustrates a perspective view of a cross section of a substrate having an insulator layer and various features formed thereon;
[0040]FIGS. 2a-2 c illustrate cross sectional views of a conventional method for depositing a conductive material on the substrate of FIG. 1;
[0041]FIG. 3 illustrates a cross sectional view of a substrate having a conductive material deposited thereon in accordance with another conventional method;
[0042]FIG. 4 illustrates an example of an electrochemical mechanical deposition apparatus;
[0043]FIG. 5 illustrates a conventional plating cell having an anode, cathode, and electrolyte disposed therein;
[0044]FIG. 6 illustrates a partial view of an apparatus in accordance with the preferred embodiment of the present invention;
[0045]FIGS. 7a-7 d illustrate a mask pulsed plating method in accordance with the preferred embodiment of the present invention;
[0046]FIG. 7e illustrates a graph corresponding to FIGS. 7a-7 d in accordance with the preferred embodiment of the present invention;
[0047]FIG. 8 illustrates a perspective view of an apparatus in accordance with the first preferred embodiment of the present invention;
[0048]FIG. 9 illustrates a perspective view of an apparatus in accordance with the second preferred embodiment of the present invention; and
[0049]FIG. 10 illustrates a side view of an apparatus in accordance with the third preferred embodiment of the present invention.
[0050] The preferred embodiments of the present invention will now be described with reference to the following figures. The inventors of the present invention have found that by mask-pulse plating the conductive material on the substrate surface, a more desirable and high quality conductive material can be deposited in the various features therein.
[0051] The present invention can be used with any substrate such as a semiconductor wafer, flat panel, magnetic film head, packaging substrate, and the like. Further, specific processing parameters such as time, pressure, mask designs, and the like are provided herein, which specific parameters are intended to be explanatory rather than limiting.
[0052] The plating method described herein is called "mask-pulsed" plating. The present invention describes a method and apparatus for mask-pulse plating the conductive material onto the substrate by intermittently moving the mask to make contact with the substrate surface and applying power between an anode and the substrate, the mask being positioned in between the anode and the substrate. Furthermore, the present invention is directed to novel plating method and apparatus that provide enhanced electrodeposition of conductive materials into the various features on the substrate surface.
[0053]FIG. 5 illustrates a plating cell 30 having therein an anode 31, a cathode 32, and an electrolyte 33. It should be noted that the plating cell 30 is a conventional cell and the exact geometry of the plating cell used in the present invention can vary. The electrolyte 33 is in contact with the top surface of the cathode 32. The cathode 32 in the examples provided herein is a wafer (substrate) having various features on its top surface. When a DC or pulsed voltage is applied between the wafer 32 and the anode 31, Cu from the electrolyte 33 is deposited on the wafer 32 as described above. The differences between the DC or pulsed power determines the quality of the Cu that is filled in the small features.
[0054]FIG. 6 illustrates a preferred embodiment of the present invention. In the present invention, a mask 40 is positioned in close proximity to the cathode wafer 32, where the mask 40 includes an opening 42 through which the electrolyte 33 makes physical contact with a section of the wafer 32. For ease of understanding and explanation, FIG. 6 does not illustrate the electrical connections, the anode, and the plating cell containing the electrolyte 33. When an appropriate voltage is applied between the cathode wafer 32 and the anode, the opening 42 allows the Cu from the electrolyte 33 to be plated onto the surface of the substrate 32 directly below the opening 42. If the mask 40 makes physical contact with the cathode wafer 32, then the plating would largely be limited to the area of the substrate directly underneath the opening 42. When the mask 40 is moved in a side to side motion as indicated by arrow 43, the electrical current passing through a section on the wafer surface will vary. This is discussed in greater detail later herein.
[0055]FIGS. 7a-7 d illustrate a mask pulsed plating method in accordance with the preferred embodiment of the present invention. The mask 40 is moved to the left with respect to the cathode wafer 32 (or alternatively, the wafer 32 may be moved to the right, or both the mask 40 and the wafer 32 may be moved relative to each other). In FIG. 7a, at time t=t1, a section 45 on the wafer 32 surface is positioned under the electrically insulating mask 40 and is not directly exposed to the electrolyte. Accordingly, the plating current at the section 45 at t=t1 is very small or near zero as depicted in the graph of FIG. 7e. FIG. 7e illustrates a graph depicting the deposition/plating current in relation to time at the section 45.
[0056] In FIG. 7b, as the mask 40 and/or the wafer 32 is moved such that the opening 42 is above the section 45, the plating current at the section 45 at time t=t2 increases sharply as the opening 42 aligns with the section 45. In FIG. 7c, the high current remains steady until t=t3. Thereafter, when the section 45 is again positioned underneath the non-opened portion of the mask 40 as shown in FIG. 7d, the current density is again very small or near zero.
[0057] Referring back to FIG. 7e, the time interval At (time between t2 and t3) is a function of the speed of the mask 40 as well as the size of the opening 42. In addition, At will be a small value if the mask 40 is moved rapidly in relation to the wafer 32. Also, if there are multiple openings in the mask 40 or if the movement of the mask 40 is back and forth, then the corresponding current vs. time plots would consist of multiple pulses. By controlling the size of the opening(s) on the mask 40 and the relative speed of the substrate and the mask, the shape, duration and repetition rate of the current pulses at any section on the substrate can be controlled.
[0058] As can be seen from the above example, a DC power supply can be used for this plating technique. By moving the solid insulating mask 40 that makes physical contact with the wafer 32, any section on the wafer surface can be suddenly and briefly exposed to the electrolyte and to the applied plating current. This is quite different from the prior art techniques defined above. For instance, in the present invention, certain sections of the wafer surface are substantially free from the electrolyte. The electrolyte is applied to a section of the wafer only when that section is exposed to the electrolyte and a pulse of current is simultaneously applied.
[0059] If the current mask-pulsed plating method is used with simple metal deposition electrolytes with no additives (i.e., inhibitors and accelerators), it would not be expected to be much different than conventional plating. This is because the size of the openings 42 in the mask 40 is much larger than the feature size on the wafer 32 surface. Therefore, when a section is exposed through the opening 42 to the electrolyte, regular plating would commence. However, if additives are added that influence polarization, then the mask-pulsed plating method can offer advantages that is not existent in conventional pulsed plating techniques.
[0060] For example, consider a Cu plating bath containing conventional solutions/chemicals (Cu sulfate, water, sulfuric acid and chloride ions) and an additive A. The additive A enhances deposition when it is adsorbed on the wafer surface. When this electrolyte is used in a conventional plating cell such as the one depicted in FIG. 5, the entire surface of the wafer 32 will be exposed to the electrolyte and the additive A. The field regions on the wafer surface, as well as the bottom surface of the large features would likewise adsorb the additive A and plating begins on these surfaces at comparable rates.
[0061] If, however, the mask-pulsed plating technique is used with the same electrolyte, the mask would clear away the additive A from the field regions since it makes physical contact with these regions. Both the small and large features, however, will still contain the adsorbed additive A since these features are not in direct physical contact with the mask. When a section of the wafer is suddenly exposed to the electrolyte, the bottom and side surfaces of the features with the previously adsorbed additive A would immediately start plating at a higher rate than the field regions. If the time period At is less than the adsorption period required for the additive A to attach itself to the substrate surface, the applied plating current preferentially flows through the features to be filled, thereby yielding an enhanced deposition rate within the features in relation to the deposition rate on the field regions.
[0062] The mask-pulsed plating method of the present invention utilizes the differences between response times of various additives to achieve enhanced plating into the various features of the substrate surface. The mechanism involves "sweeping" of the top surface of the substrate (field regions) by the mask, which does not make physical contact with the regions inside the features. The sweeping on the field regions establishes a differential between the concentration of the adsorbed species in those regions that are swept away and the regions that are within the features. When the surface is then suddenly exposed to the electrolyte and the electric field, the features with the adsorbed species attracts most of the plating current from the field regions.
[0063] This present method works equally well using multiple additives. For example, if the plating solution contains an inhibitor B and an accelerator C with the adsorption kinetics of the inhibitor being much faster than that of accelerator, the following mechanism can be used by the mask-pulsed plating method. Both the inhibitor B and the accelerator C would be partially or wholly swept off the field regions of the substrate by the mask. However, both species would still be present in the features. When the substrate is exposed to the electrolyte and the electric field, the inhibitor B would readily adsorb onto the field regions introducing a high resistance path for the plating current. The accelerator C, which is already present within the features, compensates for the action of the inhibitor in those regions and the current can easily flow through these features. Therefore, until the accelerator C is properly adsorbed onto the field regions, the film growth rate within the features will be higher.
[0064] This same result can also be expected from yet another chemistry where an inhibitor D has the property of strong adsorption and the accelerator E is weakly bonded to the field regions. In this case, the mask can readily remove the weakly bonded accelerator E from the field regions whereas, the accelerator E remains attached to the surfaces within the features. Upon exposure to the electrolyte and electric field, the plating current flows through the features preferentially until the accelerator E begins to get adsorbed again onto the field regions.
[0065] It should be noted that the above descriptions are just some examples of the mechanisms involved in the present invention and are not meant to be limiting. The present invention utilizes differences between adsorption/de-sorption kinetic of various electrolyte additives. The present invention accomplishes this by applying a solution and power suddenly and simultaneously to a specific section of the substrate surface that has been previously cleared off, partially or wholly, of one or more of the additive species.
[0066] The geometry of the plating system shown in FIG. 6 is quite simplistic. There are many possible designs that can be used to practice this invention. Some important aspects of the present invention are as follows.
[0067] (1) The mask needs to be flat when using a wafer that is also flat. The mask should be made of an insulating rigid material and the surface facing the wafer may be hard and even contain abrasives to help "sweep" away the additives more efficiently.
[0068] (2) There should be a relative movement between the wafer and the mask. The wafer, mask, or both may be moved in linear or orbital manner or combination thereof.
[0069] (3) There should be substantially no electrolyte between the mask and the wafer surface. The wafer surface should be exposed to electrolyte only through the opening(s) in the mask.
[0070] (4) The size of the opening(s) in the mask and the speed of the relative motion between the mask and the wafer should be such that any section on the wafer should be exposed to the electrolyte only briefly, typically for less than two seconds, preferably less than one second, e.g., 10-500 msec. This time interval should be adjusted with respect to the adsorption characteristics of the additives being used.
[0071]FIG. 8 illustrates a perspective view of an apparatus in accordance with the first preferred embodiment of the present invention. In FIG. 8, a mask 80 and an electrolyte channel plate 300 are mounted on an anode assembly 90. The electrolyte 100 is supplied to the anode assembly 90 by a pumping conventional system (not shown). The electrolyte 100 is pumped through the holes 210 into the channels 310 in the channel plate 300. In operation, the substrate/cathode is positioned facing the top surface of the mask 80 and the substrate and/or the mask 80 is/are rotated. The substrate may be pushed against the mask 80 at a pressure in the range of 0.01 psi and 0.5 psi. Higher pressures may be used, but may not be necessary. If the mask 80 is rotated, the entire anode assembly 90 may likewise be rotated. A cathodic voltage is applied to the substrate (not shown) with respect to an anode (not shown) placed within the anode assembly 90. The electrolyte 100 flowing through the channels 310 make physical contact with the wafer surface through the openings 250 in the mask 80. The electrolyte 100 is continuously discharged from the small bleeding holes 320 to be filtered and re-circulated. Very little, if any electrolyte actually get into the interface between the mask 80 and the wafer surface, which are in intimate contact during operation.
[0072]FIG. 9 illustrates a perspective view of an apparatus in accordance with the second preferred embodiment of the present invention. The apparatus in FIG. 9 is similar to that shown in FIG. 8, except for the holes 510 and the channel plate 600. The channel plate 600 includes different shaped channels 610, which are used to distribute the electrolyte 100 in a serial manner to the openings 250 of the mask 80.
[0073]FIG. 10 illustrates a side view of an apparatus in accordance with the third preferred embodiment of the present invention. In yet another embodiment, FIG. 10 shows the electrolyte 100 coming into a reservoir 110 that resides on the top portion of the anode assembly 90. The electrolyte 100 makes contact with the surface of the wafer 350 through holes 250 in the mask 80. The electrolyte can be discharged from the reservoir 100 through bleeding holes 200.
[0074] The power supply used in the present invention may be pulsed or DC power supply, but preferably it is a DC power supply. The power supply can be used in the current controlled or voltage controlled mode, i.e., it either keeps the applied current constant or applied voltage constant. For the case of using a current controlled mode, it is important that the size of the opening(s) in the mask be large enough to cover portions of the field regions as well as portions of the features simultaneously. In other words, when the wafer surface is exposed to the electrolyte through the opening(s), there should not be just the field regions that are exposed to the electrolyte at any given time. For example, if the opening is very small or the number of features on the wafer surface is low (low density features), the field regions are exposed to the electrolyte. In this case, since the power supply pushes through a fixed current, all the current would flow through the field regions and the Cu will be plated on the field region without discrimination. But if both field regions and features are exposed simultaneously, then the current would preferentially flow through the features and more Cu would be plated into the features and less on the field regions. This situation can be assured by increasing the number of openings in the mask so that there are always portions of the both regions (field and feature) exposed through some of the holes simultaneously.
[0075] If a constant voltage power supply is used, then the current automatically adjusts itself depending upon the resistance on the wafer surface. Therefore, if the mask hole exposes only the field regions of the wafer, less current is supplied to that surface and the plating amount is smaller. When features are exposed to the solution, more current flows into the feature and thus preferential plating takes place into the features. Therefore, it is more appropriate to use voltage controlled mode of the power supply if wafers with low feature density is coated and/or the number of holes in the mask is limited.
[0076] This invention can be used to fill both small and large features. However, a serial process can also be utilized. In that approach, there are two processing steps. During the first step the mask is pulled away from the wafer surface allowing substantial amount of plating solution between the mask and the wafer surface. In this position, the system acts just like a traditional plating cell. With the help of the additives in the plating solution, the small features are filled during this step and the situation as shown in FIG. 2b occurs. During this first step, the mask and the substrate are moved with respect to each other for uniform deposition. Then the mask is brought in contact with the surface squeezing out the solution from the wafer/mask interface except at the holes/openings on the mask. Mask-pulsed plating then commences to preferentially fill the larger features as described earlier. It is important to note that in the mask-pulsed plating technique, there is substantially no plating solution between the mask and the wafer surface except where the mask holes/openings are positioned.
[0077] Along with using copper and its alloys as the conductive material, other conductive materials such as copper alloys, iron, nickel, chromium, indium, lead, tin, lead-tin alloys, nonleaded solderable alloys, silver, zinc, cadmium, ruthenium, their respective alloys may be used in the present invention. The present invention is especially suited for the fabrication of high performance and highly reliable chip interconnect, packaging, magnetic, flat panel and opto-electronic applications.
[0078] In the previous descriptions, numerous specific details are set forth, such as specific materials, mask designs, pressures, chemicals, processes, etc., to provide a thorough understanding of the present invention. However, as one having ordinary skill in the art would recognize, the present invention can be practiced without resorting to the details specifically set forth.
[0079] Although various preferred embodiments have been described in detail above, those skilled in the art will readily appreciate that many modifications of the exemplary embodiment are possible without materially departing from the novel teachings and advantages of this invention.
|Brevet citant
|Date de dépôt
|Date de publication
|3 janv. 2002
|2 nov. 2004
|Applied Materials Inc.
|Planarization of substrates using electrochemical mechanical polishing
|22 sept. 2011
|12 juin 2012
|Ibiden Co., Ltd.
|Plating apparatus, plating method and multilayer printed circuit board
|21 déc. 2001
|26 juin 2003
|Alain Duboust
|Electrolyte composition and treatment for electrolytic chemical mechanical polishing
|6 juin 2003
|25 déc. 2003
|Applied Materials, Inc.
|Method and composition for polishing a substrate
|26 juin 2003
|18 mars 2004
|Applied Materials, Inc.
|Method and composition for polishing a substrate
|14 mai 2004
|9 déc. 2004
|Liu Feng Q.
|Method and composition for fine copper slurry for low dishing in ECMP
|25 oct. 2004
|17 mars 2005
|Liang-Yuh Chen
|Planarization of substrates using electrochemical mechanical polishing
|1 oct. 2004
|5 mai 2005
|Applied Materials, Inc.
|Methods and apparatus for polishing a substrate
|7 mars 2005
|7 juil. 2005
|Applied Materials, Inc.
|Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP
|5 mai 2005
|6 oct. 2005
|Zhihong Wang
|Process and composition for conductive material removal by electrochemical mechanical polishing
|19 déc. 2005
|18 mai 2006
|Applied Materials, Inc.
|Method and composition for electrochemical mechanical polishing processing
|14 oct. 2005
|9 nov. 2006
|Applied Materials, Inc.
|Process and composition for electrochemical mechanical polishing
|27 mars 2006
|9 nov. 2006
|Applied Material, Inc.
|Process and composition for electrochemical mechanical polishing
|12 janv. 2012
|Ibiden Co., Ltd.
|Plating apparatus, plating method and multilayer printed circuit board
|Classification aux États-Unis
|Classification internationale
|Classification coopérative
|Classification européenne
|7 mai 2001
|18 févr. 2005
|28 aoűt 2006
|Fee payment
Year of fee payment: 4
|12 mars 2007
Owner name: NOVELLUS SYSTEMS, INC.,CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ASM NUTOOL, INC.;REEL/FRAME:019000/0080
Effective date: 20061204
|20 sept. 2010
|Fee payment
Year of fee payment: 8
|18 sept. 2014
|Fee payment
Year of fee payment: 12


text:
Woman called to minister to victims of Ugandan warlord Joseph Kony
Next weekend at the Azalea Festival in Pickens, Kathie Burgess will bring her ministry to the people.
Burgess, the director of Hands of Kindness Children's Ministry, hopes to bring attention to the child victims of Joseph Kony, and to provide them with essentials for survival. Burgess lives in Cleveland, S.C., a town in northern Greenville County and about five miles east of the Pickens County border.
"I've traveled to Indonesia and Tanzania, and I've seen the poverty that people live in," Burgess said. "But in Uganda it's different because not only are the people living in poverty conditions, but they are traumatized by the 20 years of cruelty perpetrated by Joseph Kony."
Kony, a Ugandan warlord and Acholi tribe member from the Odek village of Uganda, was head of the Lord's Resistance Army. Once revered by the people he led, Kony turned on them in an effort to turn the country into a theocracy using his own religion, a mix of mysticism, Acholi nationalism and Christian fundamentalism.
Kony was indicted in 2005 by the International Criminal Court in The Hague for war crimes and crimes against humanity but has evaded capture. Kony is believed to have ordered the kidnapping of more than 66,000 children in Uganda to use as sex slaves and child soldiers.
In March, filmmaker Jason Russell released a 30-minute video titled "KONY 2012" about Kony and the impact of his actions on the children of Uganda. The film brought international attention to Kony, and numerous people around the United States hope to provoke a large overnight poster campaign on Friday.
But Burgess didn't need posters or videos to see that something needed to be done.
On a mission trip to Uganda, Burgess said she was asked by Michael Okwakol, president of the Baptist Union in Uganda, to start a ministry to help an estimated 2.5 million orphans in Uganda obtain the basic necessities of life.
"There are 2.5 million orphans, as well as many indigent children in Uganda, due to AIDS and the devastation of war by the Lord's Resistance Army," Burgess said. "I have personally seen these children whose daily existence is a struggle to survive. I have sat and tried to mend their ragged clothes, because for many, what they were wearing was all they had. Many children receive one meal a day, have no access to medical care and no chance for an education. Many children have experienced extreme brutality by the Lord's Resistance Army, and others have lost their parents due to the LRA or AIDS."
Burgess' ministry works to raise money to help the children. Instead of donating $35 for a wristband and T-shirt, as the Kony 2012 video requests, Burgess's ministry asks people for monthly donations to feed, clothe, medically care for and educate the orphans.
"We're trying to raise $20,000 for a dormitory for the children to live in," she said. "So many of them are on their own. They have nothing. There are schools in Uganda, but parents still have to pay a good bit for their children to go to school. There's no one there to pay for the orphans."
So Burgess travels to churches, speaks in front of groups and works to bring attention to the cause.
It is a ministry that Burgess says she was called by God to do.
"I was ready to go back to school to be a nurse," she said. "But before I went back to school, I went on a mission trip to Uganda. Something called me to go. When I came back, I felt pulled to go to North Greenville University. I had no idea why the Lord was pulling me there. Now I believe he had a mission for me. "
In May 2011, Burgess graduated from the school with a master's degree in ministry.
Her Hand of Kindness ministry is now in its second year, and Burgess estimates she has been able to sponsor more than 40 children.
"When you look at the number of children, it can be a little overwhelming, but we're just trying to get to as many as we can," she said.
Burgess works with her home church in Travelers Rest as well as visiting other churches in the area. But anyone can make a donation to the ministry, she said. The ministry takes online donations through Allegro Organizational Solutions, an organization that handles all finances, including online giving, for smaller ministries. Donations can be made at www.allegrosolutions.org using the Allegro account code Hkindness.001.
Hands of Kindness has its own website, www.handsofkindnesschildren.com.
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text:
With No Rings Till The End Of The Year Star Wars saga has new secrets Drew Goddart opened 3 mysteries about Martian MORE ›
Lyrics/song texts are property and copyright of their owners and provided for educational purposes only.
Game Over Lyrics
This composition "Game Over" contains no lyrics and completely instrumental.
Melody was included in original CD album "Ender's Game" from official Movie soundtrack in year 2013.
Ender's Game Song List
›Ender's War (Instrumental)
›Stay Down (Instrumental)
›Battle School (Instrumental)
›Move It Launchies (Instrumental)
›The Battle Room (Instrumental)
›Mind Game Part 1 (Instrumental)
›Salamander Battle (Instrumental)
›Mind Game Part 2 (Instrumental)
›Dragon Army
›Dragons Win (Instrumental)
›Bonzo (Instrumental)
›Ender Quits (Instrumental)
›Mazer Rackham (Instrumental)
›Enemy Planet (Instrumental)
›Command School (Instrumental)
›Graduation Day (Instrumental)
›Final Test (Instrumental)
›Game Over (Instrumental)
›The Way We Win Matters (Instrumental)
›Ender's Promise (Instrumental)
›Commander (Instrumental)


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10 of the best 50 things events 2014
This summer holiday fill your days with challenges and adventures. We're encouraging children to show nature they care by getting them up off the sofa, jumping into the great outdoors and having lots of fun discovering the natural world.
With an extra hour of sunlight on your side and hundreds of adventurous ideas for all the family to enjoy, including hunting for bugs, flying kites and even snail racing, here's our top 10 activities and events to get you started on the '50 things' list.
1. Climb a tree
Croome, Worcestershire
Tree Climbing, 22 August, 20 September, 27 October 10.30am–4.30pm
Spend an hour with two highly-skilled instructors who will teach you how to use ropes, knots, carabineers and a harness to climb to the top of a tree and zip wire back down. While you're up there take a look at the view from the top over the landscaped park. Afterwards let the children run wild, have fun and make their own adventures. There's lots of space to run around and miles of interesting walks and follies to discover with the whole family.
Activity led by the Great Big Tree Climbing Company. Booking essential, email Adam for more info.
Watch our YouTube video
2. Hunt for bugs
White Park Bay, County Antrim
Go Wild with the Wardens, 22 August, 10am–12pm
Join the rangers for a morning of fun and adventure on a beautiful stretch of golden sand on the North Antrim coast. Have a go at completing some of your 50 things with building a den, hunting for bugs and much more. What's the creepiest crawly you can find on this stretch of golden sand. Meet at the car park in White Park Bay.
Watch our YouTube video
Visit White Park Bay to tick off your 50 things
3. Create some wild art
Allan Bank and Grasmere, Cumbria
Wild Art Wednesdays, 20 & 27 August, 11am–4pm
Set your creativity free and find lots of materials that vary in colour and texture from around the grounds once owned by William Wordsworth. Create some wild art using the natural materials found in the woodland. With ranger tips and activity sheets available, you're sure to create a masterpiece.
Get creative at Allan Bank and Grasmere
4. Fly a kite
Brancaster Estate, Norfolk
Wild Wednesdays, 20 & 27 August. 10am–12.30pm & 2pm–4.30pm
Join the team on the Brancaster Estate for a day of '50 things' themed family fun on the Norfolk Coast. There's a lot to do from kite flying to stone skimming, tracking a wild animal or making some coastal wild art. You can visit for as little or as long as you like and you can dip into activities throughout the day. So grab your scrapbook and start ticking off your '50 things' and have some adventures.
Booking essential
5. Play pooh sticks
Morden Hall Park, London
Morden Hall Park is a green oasis in the city. It used to be a deer park and is one of the last remaining country estates in South London, lining the River Wandle. Surrounded by meadows, trees and the gentle sounds of birdsong and running water, the park offers a rare sense of discovery and is the perfect place to play pooh sticks. The park has several bridges where you can challenge your family to a race, so choose your stick wisely and take on the challenge.
6. Plant it, grow it, eat it
Biddulph Grange Garden, Staffordshire
Children's Gardening Club, 31 August, 1pm–2.30pm
Just like you, fruit and vegetables need a bit of time to grow but they're definitely worth the wait. If you're willing to get your hands dirty and you want to have a go at growing your own fruit and vegetables, then the gardening club at Biddulph is the place to be this summer. Learn to grow an array of different fruit and vegetables from seed. Find out how to care for them and then take all of the produce you grow home to make a delicious meal.
Booking essential, Price: £3.
Grow your own fruit and veg at Biddulph Grange
7. Build a den
The Vyne, Hampshire
Build a den, 29 August, 12pm–1pm
Visit The Vyne this summer and see if you can build one of the biggest dens you've ever seen. The Vyne's outdoors team are holding special woodland workshops where kids can pick up top tips on how to make a brilliant hideaway. Spend some time collecting together the best materials, and use them to make a den that you can even stand up in. Collect branches, twigs and leaves to make a cosy den. After you've built your den explore the woodlands and see if you can spot any woodpeckers, jays and rare waterfowl.
Price: Suggested donation £2.
8. Set up a snail race
Wimpole Estate, Cambridgeshire
50 things - Snail racing, 20 & 26 August, 11am-4.00pm
There are lots of animals to discover this year at Wimpole. A working estate still guided by the seasons, you can visit the piggery, goats and Longhorn cattle. It's not all about the big animals though, take part in a snail race and tick off number 17 on your list.
Discover the animals at Wimpole Estate
9. Explore inside a tree
Dyrham Park, Gloucestershire
It's time to tick off number 22 of your '50 things' list and climb into one of the amazing hollow tree trunks at Dyrham Park, near Bath. Some of the great trees at Dyrham are over 300 years old and their trunks are massive. Down by the house is a set of ancient plane trees that are perfect for climbing inside. Just remember, there could be a big black crow lurking inside who might be surprised to see you. Lots of insects live inside hollow trees, like beetles, eating the rotting wood. Look closely and you'll see their burrowing holes.
10. Make a daisy chain
Basildon Park, Berkshire
50 things - Create some wild art, 21 & 28 August, 10am–5pm
Get creative with twigs, leaves and flowers you can find in grounds at Basildon Park. You can find lots of daisies around the garden and parkland. Pick a few and make a beautiful chain for the summer time. While you're there follow the new wild wood walk up to the house. There's lots to explore, including stepping stones a woodland tunnel and a bridge.
Price: £3.


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Was the U.S. Team the Victim of Anti-Americanism?
June 18, 2010
Every fan is a bit of a conspiracy theorist. Every outcome can be chalked up (unjustly) to poor judgment or prejudice on the part of the referee. If the U.S. wanted to insure themselves against such a fate, they could have learned from their match against England and played with urgency from the first whistle. Torres could have tucked back and picked up Birsa rushing on to score the first goal. Demerit and Onyewu could have communicated to keep Ljubijankic offsides on the second.
The Shaman
March 22, 2004
ONE EVENING LAST OCTOBER, Mark Fisher, a nineteen-year-old student at Fairfield University in Connecticut, who had gone into Manhattan with friends, met a girl in a bar on First Avenue on the Upper East Side, got separated from his group, and was found dead the next morning on a Brooklyn sidewalk, his body wrapped in a yellow blanket, five gunshot wounds in his chest. According to a long article in The New York Times, Fisher's case remains unsolved mostly because no one who was with him that night seemed to want to tell the police everything that they knew.


text: First Year Student Housing Application Important Dates for the 2015-2016 Application Process March 18 2015 Applications are NOW OPEN! Applications opened via MyHousing at 10am (EST) May 15 2015 Priority Housing Deadline June 1 2015 Last day to apply for a College Learning Community June 2015 Last day to submit any requests for medical accommodations to the Office of Disability Resources July 2015 Time Tickets are sent to all students who have a completed MyHousing and submitted the $200 housing deposit via the Student E-Bill. July 2015 Online Room Self Selection Round 1 Opens: All students with Priority Housing and received a Time Ticket July 2015 Online Room Self-Selection Round 2 Opens: All students who applied for housing after the priority housing deadline and received a Time Ticket July 2015 Online Room Self-Selection closes August Move-In Date Registration A Complete 2015-2016 Housing Application is BOTH: A MyHousing Application with electronic signature. In DrexelOne, click on "MyHousing" and A submitted $200 housing deposit via the Student E-Bill, accessible in the "Student Tab" of DrexelOne Students under the age of 18 at the time of MyHousing Application must have a Parent Pin number which was provided to the parents of matriculated students via e-mail. University Housing can provide Parent Pin to parents via phone (215-895-6155) In order to access MyHousing, the student must have activated their Drexel University Computer Accounts. It will take up to 48-hours for access to MyHousing to be granted after accounts are activated. University Housing is unable to expedite this. Freshmen students must live in a University Housing Main Campus residence hall. Freshmen are not eligible to live in Greek Housing, University-Affiliated Housing, or a University-Approved Property. Things to Know Before You Apply: Priority Housing for 2015-2016 Preferred Roommate Selection The Honors CLC College Learning Communities Priority Housing for 2015-2016 Students who apply by May 15, 2015 receive Priority Housing. A student with Priority Housing will be in the first round of issued Time-Tickets for Self-Selection. Self-Selection is the process where students log into the system at a specific date and time to select their Residence Hall and Room. Time-Tickets for New Students are generated by lottery (randomly) based on their Priority status. This means that students who apply between March 18 and May 15 will be randomly assigned a Time-Ticket for the first round of Self-Selection. Self-Selection is scheduled to take place in July 2015. Details regarding the Self-Selection process will be emailed to students' Drexel e-Mail accounts in early July. Preferred Roommate Selection The Preferred Roommate Selection will close for editing in early July. Roommates accepted prior to the deadline will be able to participate in Self-Selection together. Students applying after the Roommate Selection deadline will not see the Preferred Roommate Selection step on their application. On the MyHousing application, each student will complete a required Living Style Questionnaire. This short survey can be used to help search for a potential roommate. Students can also create and update a Roommate Profile about themselves; including the ability remove themselves from being searched in the roommate process. University Housing will utilize the Living Style Questionnaire to assign students who choose not to participate in, or are not eligible for, Online Room Self-Selection. Students who go through Self-Selection without a preferred roommate will be able to log into MyHousing at any time to see who else has self-selected into their room (or suite, if applicable.) This information will not be emailed but will be available in "real time" through MyHousing. Students have several options when searching for roommates in MyHousing Search for a specific student using their Last Name and their Web Screen Name (which is the Drexel User ID, i.e. ABC123). Browse for roommates by selecting answers to the Living Style Questionnaire Browse roommates who match the Living Style Questionnaire Students must mutually confirm each other. For example, if Bruce requests Clark, Clark must re-log back into MyHousing to confirm Bruce. You may only have up to 3 preferred roommates. Because of this, the system will only allow you to have three roommate requests or confirmed roommates total on your application. If you have already sent or received 3 preferred roommate requests, you will not be able to send new roommate requests until the other requests have been resolved. The Honors CLC Students who are accepted into the Honors Program, as part of the Pennoni Honors College, will have the ability to select The Honors CLC on the Housing Application. Only students accepted into the Honors Program, and whose Official Drexel administrative system record says this, are able to see this selection on the MyHousing Application. Participation in the Honors Program Learning Community precludes the student from participation in another College Learning Community. A student is not automatically placed into the learning community because they are in the Honors Program; this is a self-selected housing option. College Learning Communities College Learning Communities are available to students who are enrolled in the colleges, schools and programs listed below. In college learning communities, students live with other students from the same academic college, making it easier to form study groups or project teams. Each community is assigned to a specific area in a residence hall with a central common area, and they organize their own social and academic activities, from informal gatherings to ongoing lecture series. Please see the links for more information about the programs. After completing your application in MyHousing, you will be directed to information on any additional application steps specific to each program. Learning Communities for the 2015-2016 academic year: Biomedical Engineering Learning Community Center for Hospitality and Sport Management - College Learning Community Close School of Entrepreneurship's Living Learning Community College of Arts and Sciences Emerging Scholars College of Computing and Infomatics College of Engineering Learning Community College of Nursing & Health Professionals Learning Community Liberty Scholars Learning Community LeBow College of Business Learning Community LeBow College of Business - Business & Engineering Learning Community LeBow College of Business - Economics Learning Community LeBow College of Business - Global Classroom Learning Community Westphal Learning Community


text:
AAA Monday: d'Arnaud Homers. Still Waiting on BabyBuck
AAA: New Orleans Zephyrs (MIA) 12, @ Las Vegas 51s 9 The Las Vegas homeruns: C Travis d'Arnaud, CF-LF Brian
AAA: New Orleans Zephyrs (MIA) 12, @ Las Vegas 51s 9 The Las Vegas homeruns: C Travis d'Arnaud, CF-LF Brian
[sny-editorial userid="48679619″]Salt Lake Bees (LAA) 6, @ Las Vegas 51s 3 RHP Jacob deGrom (pictured) made his second start for
[sny-editorial userid="48679619″]The Las Vegas 51s prepare to open a four game series in Tacoma Thursday night with a 31-26 overall
AAA: Las Vegas 51s 2, Fresno Grizzlies (SF) 1 RHP Zack Wheeler put together his first quality start in his
AAA: Tacoma Rainiers (SEA) 10, @ Las Vegas 51s 1 Yuck, yuck, yuck. Carlos Torres: 5 IP, 9 H, 6
AAA: @ Colorado Springs Sky Sox (COL) 8, Las Vegas 51s 7 The Sox scored twice in the bottom of
– Ted Berg at USA Today has a wonderful in-depth look at how difficult Las Vegas is for player development
AAA: Colorado Springs Sky Sox (COL) 19, @ Las Vegas 51s 5 The wind was blowing out at Cashman Field
Once again Robert Brender contributes this from Vegas. Poor starting pitching put the Las Vegas 51s in a hole they
AAA: Las Vegas 51s 14, Fresno Grizzlies 3 An efficient Vegas offense, helped by four (!) Fresno errors scored 12


text:
Most Popular in:
Controversial Ingredients: One Brand's Perspective
By: Ada Polla and Anne Pouillot
Posted: November 29, 2011, from the December 2011 issue of GCI Magazine.
page 7 of 11
Why the bad reputation? Silicone polymers have been known to form a non-oily film on the surface of the skin, which can obstruct pores. Furthermore, the synthetic origin of silicone polymers is not in accordance with some brand positioning. Although derived from a natural resource (sand), the processes necessary to obtain the actual silicone polymer have been unwelcome.
Should it be replaced? Not necessarily. Scientific data suggest that silicones are neither dangerous nor allergenic. Indeed silicone has been utilized in many consumer/medical products for 50 years without causing significant side effects.17
What are the alternatives? There is currently no alternative that provides the silky feel that silicone creates in a cosmetic product. We propose that it is adequate to keep dimethicone in formulations for which a silky texture is preferable.18 Alchimie Forever uses silicone derivatives in a single product, so far without any adverse consequences on the skin such as pore-clogging.
Mineral oil
What is it? Mineral oil or paraffinum oil belongs to the class of chemicals called hydrocarbons, i.e., residues from the distillation of petroleum. Mineral oil used in cosmetics is purified by a refining process. Mineral oil is used in oil phase products as an emollient because of its low volatility and smooth texture.19 Mineral oil has hydrophobic effects, namely it protects the skin against moisture loss.
Why the bad reputation? Mineral oil is derived from petroleum. That very word has negative connotations among consumers. Furthermore, mineral oil creates a film on the skin,20 potentially leading to clogged pores and obstructing the skin. Should it be replaced? Probably. Consumers are increasingly rejecting raw materials derived from petroleum and hydrocarbons, and easy-to-use alternatives are available.


text:
Former Lancer Jordan Brescacin signed a free-agent contract with the Blue Bombers while linebacker Akeem Whonder inked a free-agent deal with the Stampeders.
Lancers optimistic entering OUA football season
Time for real Lancers to stand up and be counted
As the Windsor Lancers got training camp for the OUA football season underway, one question seemed to be on everyone's mind: Would the real Lancers please stand up?
Brescacin helped change Lancers offence
Lancers open by whipping Gee-Gees
The Windsor Lancers wanted to start the OUA football season by continuing the forward strides they made a year ago and you aren't about to find anyone to suggest that they didn't. Ranked 10th in the CIS to start the […]
Lancers nearly overcome loss of top receiver
Minus their leading receiver, the Windsor Lancers fought gamely against the Western Mustangs and very nearly earned the first appearance in the Yates Cup final before falling 33-27 Saturday at TD Waterhouse Stadium in London. When Jordan Brescacin (971 receiving […]


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Rita Ora is doing her best Beyonce impression!
The blonde beauty sang a stripped-back version of Beyonce's "Drunk in Love" on Sunday during an appearance on the French television show "Le Before du Grand Journal" -- and though she's no Queen Bey, the 23-year-old does a great job channeling the superstar.
Check out the video above to see Rita's cover of the hit single!
The "I Will Never Let You Down" singer, who's been mentored by Beyonce's hubby Jay Z since she was discovered, also performed a cover of the song at the Radio 1's Big Weekend in Glasgow on Sunday.
What do you think of Ora's rendition? Tell toofab in the comment section, and click "Launch Gallery" below to see Beyonce's candid photos!
© 2015 EHM Productions, Inc. All rights reserved. Reproduction in whole or in part without permission is prohibited.
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text:
- Filed Under
The seed for Courtney Carroll's dream profession was planted when she was a little girl, just starting school, shopping for school clothes with her mom.
Few of the dresses or pants or skirts or shirts or shoes worked for Courtney. The clothes were hard to even try on. And if they came close to fitting, they were designed for really little kids, and made Courtney feel silly.
"I just got tired of trying on this outfit and that outfit and nothing fit," she recalled. "I asked my mom, 'Do they not have just one aisle for us special kids?' " ...


text:
Hey Everyone,
In yesterday's blog I mentioned the VA had not published the numbers for this week's Monday Morning Report. Good news! The VA finally published the numbers. Even better news is the number of pending claims has GREATLY decreased. Wooo Hoooo! In fact, the VA processed almost 43,000 claims in the past week. I had to look closely to find the improvement.
At first glance, I quickly reviewed the number of compensation claims. Surprisingy, the number had gone from 801,528 to only 799,818. That's only 1,710 claims. That is an improvement. But where were the other 42,000 claims?
There was an increase in award adjustments and an increase in program reviews. These didn't increase much at all. There was a slight decrease in the "other category." But again not enough to write home about.
I finally found the improvement in the Pension category. The winners in the claims process (if you want to say they are winners) are those who've had claims pending for Survivor benefits. The number of claims pending for survivor benefits went from 43,951 to 0. That's right – zero!! That means the VA has made decisions on over 43,000 claims for the surviving spouses of veterans who have died. These surviving spouses are usually in need of a monthly payment or benefits. They usually have severe difficulties if they are without monthly funds for any significant time. And YES the VA does provide benefits to surviving spouses and children. Good job VA!!!
Here's the link to this week's numbers: http://www.vba.va.gov/REPORTS/mmwr/index.asp
In another blog, I'll discuss survivor benefits and pension. For now, I'm still focusing on compensation and basic entitlements. I promise I'll get to Pension soon.


text:
Quality of Research
Cardiff School of City and Regional Planning
Research Assessment Exercise (2008)
|Unit of Assessment
|Staff submitted (FTE)
|By percentage, research activity in the submission judged to reach quality standard
|Town and Country Planning (H31)
(Overall quality profile in blocks of 5%)
Research Profile
|Town and Country Planning
|Research Power
|Cardiff University
|University of Leeds
|University of Newcastle upon Tyne
|Oxford Brookes University
|University of Cambridge
|University College London
|University of the West of England, Bristol
|University of Sheffield
|University of Manchester
|Sheffield Hallam University
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The School of City and Regional Planning is the only planning school in the UK to have been awarded the top research rating in all previous Research Assessment Exercises. The School plays a leading international role in its fields of expertise and its research has an agenda-setting influence in key debates on the development, management and sustainability of cities and regions.
It is one of the most diverse and interdisciplinary planning school in the world, thanks in part to a distinctive approach to research. Priority research themes are examined across multiple scales and sectors, thereby working to generate knowledge that informs all levels of academic scholarship, policy-making, and professional practice.
Cardiff Bay development.
Research is structured around five large research groups: environment; housing; spatial analysis; spatial planning and city environments; and urban and regional governance. The broadly based research activity across the groups draws heavily upon interdisciplinary social science and research outputs fall under one or more of the following themes: sustainability; social inclusion; governance and planning; and innovation and regeneration.
With its international links and research profile the School provides a rich and lively scholarly environment in which to conduct postgraduate research. There are around 30 full-time PhD students in the School. The School has been awarded ESRC recognition for both 1+ 3 and +3 PhD programmes (the former including an initial year on the MSc in Social Science Research Methods).
The School runs, or co-runs with other Schools, eight Research Centres, providing platforms for sustained programmes of funded research and interdisciplinary work:
- Regeneration Institute (joint with the School of Social Sciences);
- Urban China Research Centre;
- Centre for Research on Environment, Society and Space;
- Centre for Advanced Social Studies;
- Centre for Education in the Built Environment;
- Centre for Local and Regional Government Research;
- Centre for Business Relationships, Accountability, Sustainability and Society (BRASS)
- Wales Institute for Social and Economic Research and Data.
With an average annual research income of £1.7M, over 40 active researchers from eleven countries, plans for a significant expansion of its physical environment and seven exciting new appointments in the coming year, the School looks forward to more years of success as one of the most active and respected of the world's top planning schools.
Learn More
Learn about research at the Cardiff School of City and Regional Planning
Visit the Cardiff School of City and Regional Planning website


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Five days into the New Year, we had our first big meeting. In 2011, PHA will deliver over three million dollars of medical education across five programs in our Medical Education Fund. » Read more
» Spotlight On... Generation Hope Blog » Get Smart» Website Discoveries» PH Community Scoop
» From the PHA News Desk» Medical Community Bulletin» Also of Interest» PH News Headlines
Young Adults Write to InspireGeneration Hope, PHA's virtual community for young adults with PH, now has a blog! Read about Jenny and friends, who tackle all the adventures of life as 20- and 30-somethings while living with PH. » Visit the Generation Hope blog
When we hosted our First International Leaders' Summit at the 2010 PHA Conference last June, we knew the need for leader development and resources was greater than could be met in one day in California – the 30 participants (including us!) went home hungry for more. » Read more
Just in time for 2011, new recordings from our 9th International PH Conference are available in PHA Classroom. Topics include: Exercising Your Way to a Healthier and Happier State, Defensive Dining, Conserving Your Energy and Strength and more. More sessions coming soon! » View new sessions
Wednesday, Jan. 19, 1:00 p.m. ETIf you or someone you know was recently diagnosed with PH, you probably have a lot of questions. In this webinar, Louise Durst, RN, will review the basics of what every PH patient should know about PH, treatment and coping with this disease. » Register now
Thursday, Jan. 20, 8:30 p.m. ETTake part in a telephone discussion on coping with your child's diagnosis. This conversation will be open for one hour; join us for as long as you'd like. Dial toll-free from the U.S. or Canada: 1-866-1260. When prompted, enter access code 5653004. » Learn more about PHA's Parent Support Resources
Tuesday, Jan. 25, 8:00 p.m. ET Want to meet another pulmonary hypertension patient in your area but not sure where to start looking? Join PHA's Debbie Castro and Sophie Klein to learn how to find other patients in your area. » Register now
Wednesday, Jan. 26, 12:00 p.m. ETDeborah Levine, MD, will discuss strategies for communicating effectively with medical professionals, and methods for opening communication between your primary care provider, PH team and other specialists. » Register now
Learn about PH treatments on the horizon with Dr. Michael McGoon on Tuesday, Feb. 1, at 3:30 p.m. ET! Join PHA's Jessica McKearin and Jenna Roe on Thursday, Feb. 3, at 3:00 p.m. ET to find out about planning a spring special event. » Learn more
One of the common threads in my correspondence with people new to PH is that they know nothing about it. They had not ever heard of PH before their diagnosis. If they do some reading, they know that transplant is sometimes an option. » Read more
Thanks to our awareness-raising efforts in November, the world is a brighter place for PH patients and their loved ones. Each of our 2010 victories provide opportunities for new successes in 2011. » Read more
Silver Spring and DC Capital Breathers Support Groups Leader Kimberlee Ford shared her story in the American Thoracic Society Public Advisory Roundtable (ATS PAR) e-newsletter. The same issue also features an interview with PHA President Rino Aldrighetti. » Read their stories (PDF)
To help those of you who are interested in applying for a Tom Lantos Innovation in Community Service Award of up to $5,000, but got caught up in holiday madness, we have good news. The deadline to apply has been extended until Tuesday, Jan. 18. » Learn more and apply now
Enhance the impact of your center's medical education program by partnering with PHA in 2011! PHA's Building Medical Education in PH events are designed to foster partnerships between PHA and PH Centers to promote continuing education in the field of PH through CME educational events. » Learn more
Virginia Steen, MD, will host a live webinar "PH in Systemic Sclerosis" on PHA Online University on Jan. 27. This webinar is free for medical professionals and is eligible for CME/CEU credits after completion. (This is not a patient-oriented presentation.) » Learn more
Beginning last October, Arizona implemented budget cuts and stopped financing certain transplant operations under the state's version of Medicaid. Consequently, 98 beneficiaries were removed from the transplant waiting list. » Read more
If you're looking for the most tax-effective gift to make to a charitable organization, your individual retirement account (IRA) may now be the best choice. Donors aged 70.5 or older are once again eligible to move up to $100,000 from their IRAs directly to qualified charities without having to pay income tax on the money. » Read more
In December 2010, the Department of Health and Human Services (HHS) proposed new rules that would require many insurers to publicly disclose and justify rate increases above a set percentage. » Learn more
The new Pre-Existing Condition Insurance Plan is available for people who have a pre-existing condition, like PH, and have been without health coverage for at least six months. » Find out if you qualify and learn more about your state's plan
» What Pulmonary Hypertension Is - and Why You Should Know
» Holiday Miracle: Sick Infant Comes Home for Christmas
» New Diagnostic Tool to Detect Complications In Lung Transplant Patients
» More News
Jan. 18, 2011How Can You Get a Helping Hand? Grassroots Power! webinar: online and phone
Jan. 19, 2011Newly Diagnosed? What You Need to Know webinar: online and phone
» Go to the Events Calendar
PH patient Liz Brigham shares her personal story and hits the PH talking points in this television interview. For more information on sharing your story with the media, contact Elisabeth: 301-565-3004 x753 or email@example.com.
Who is your biggest support as a PH patient?
77.8% – Spouse/Partner11.1% – Parent or other relative11.1% – Friend
Look for a new question in the next issue!
Need more information? Contact email@example.com Hypertension Association 801 Roeder Road, Ste. 1000 Silver Spring, MD 20910Office: 301-565-3004 | Fax: 301-565-3994
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The information provided on the PHA website is provided for general information only. It is not intended as legal, medical or other professional advice, and should not be relied upon as a substitute for consultations with qualified professionals who are familiar with your individual needs.
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The National Organization for Rare Disorders (NORD) awarded PHA the Abbey S. Meyers Leadership Award in 2012 for outstanding service to PHA members in advocacy, education and other key areas.


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Form 46A "Request For Conference In Conjunction With Lump Sum Under § 48 and accompanying guidelines are available from the Department at the front desk and online.
The following instructions apply to the use of Form 46A:
- Requests for M.G.L. ch. 152, § 46A conferences must be made by filing a Departmental Form 46A with the Central Scheduling Unit. A notice giving the name of the assigned judge, the time and place will be sent to all parties.
- Failure to fully complete the 46A Form will result in the rejection of the form, which may delay the scheduling of a § 46A conference.
- At least ten (10) days prior to the proceeding, the moving party must submit a memorandum to the administrative law judge, with copies to all parties, including the lienholder, stating the reasons why, and for what amount, the lien should be discharged. (PLEASE NOTE THAT THIS HAS BEEN DONE).
- At least five (5) days prior to the proceeding, the lienholder must submit a response memorandum to the administrative law judge, with copies to all parties.
Questions regarding the scheduling of § 46A conferences should be directed to the Central Scheduling Unit, 617-727-4900, x 7442 or x 7440.
Print Form 46A - Request For § 46A Conference In Conjunction With Lump Sum Under § 48


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Moderators: Ryall, JohnBarber, Bobby Curnow, Denton J. Tipton, Mariah
Bobby Curnow wrote:Yeah, we'll have lots of B & W art, as well as other behind the scenes stuff in the tpb.
The price point would not be my first choice, but I don't have say in the matter.
Thanks for the nice words!
Bobby Curnow wrote:Thanks Swordmaster, I think that's a very fair take on the book!
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Santa will hear requests from good girls and boys at the 17th annual Pancake Feed, from 7 a.m. to noon, Saturday, December 1. The pancake feed, hosted by East Pierce firefighters Local 3520, will be held at the Sumner fire station located at 800 Harrison Street. The firefighters, fire commissioners and local dignitaries will be flipping the flapjacks and serving ham, coffee and orange juice while Santa hobnobs with the crowd.
The breakfast is a benefit to raise money for the Sumner Family Center, a local program that provides support and services to families living within the Sumner School District, including Bonney Lake, South Prairie and Sumner. Money that is left over is used through out the rest of the year to help families who live with in East Pierce fire district with fuel, medications, hotel rooms for domestic violence families and other uses.
Event Admission Fee (if any): $3
Phone Number: (253) 863-1800
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Carly Fagan Neals, J.D.
Senior Wealth Advisor & Vice President
Carly Fagan Neals brings over a decade of experience in banking, wealth advising and trust/estate administration to her current role as Senior Wealth Advisor with First Commonwealth Advisors. In her role, she contributes to the efforts of developing new Wealth business through collaboration with First Commonwealth's Pittsburgh-based Wealth Market Team.
Ms. Neals and her team work closely with high net worth individuals to provide comprehensive wealth management services, including investment management and asset allocation, tax planning, trust services, estate planning including charitable and gifting strategies, customized banking services, insurance analysis, as well as cash flow and retirement projections. As the Trust specialist on her Wealth Team, Carly works hand-in-hand with clients and their accountants, attorneys, and other outside advisors to ensure their short- and long-term financial goals and objectives are being met.
Additionally, Ms. Neals and her team cater to the wealth advisory needs of not-for -profit organizations by working to establish the necessary framework to carry out the organizations' missions. Thereafter, Carly and her team provide ongoing support and oversight to ensure continued progress toward the organizations' short and long term financial goals.
Prior to joining First Commonwealth, Ms. Neals spent several years as a Trust professional for a large Pittsburgh based financial institution in addition to practicing law for a firm in Pittsburgh where she specialized in estate and trust administration and estate and tax planning.
Carly Fagan Neals attended the University of North Carolina at Greensboro where she earned a Bachelor of Science degree in Business Administration. She studied at the Duquesne University School of Law to achieve her Juris Doctor. Ms. Neals is a member of the Allegheny County Bar Association and the Estate Planning Council of Pittsburgh; she is also active in her community where she serves on the Board of Trustees for the Homeless Children's Education Fund (HCEF) and frequently participates in public outreach and service initiatives.
Born and raised in Western Pennsylvania, Ms. Neals currently resides in Wexford with her three children. In her free time, Carly enjoys spending time with her family; she also avidly enjoys yoga and has competed in two marathons.
First Commonwealth Advisors is a registered trademark used to market various wealth management products and services. Investment management, trust and fiduciary services are provided by First Commonwealth Bank. Certain insurance products are offered through First Commonwealth Insurance Agency, a licensed insurance affiliate. Securities, insurance products and advisory services are offered through Essex National Securities LLC, member FINRA/SIPC and an SEC registered investment advisor. Essex is not affiliated with First Commonwealth Bank.


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The 6 Best -- and 5 Worst -- Hand Creams
When was the last time you showed your hands some love? Before you reach for any old lotion, check out these best hand creams -- and which ones to skip
Why: One reader says, "I keep this on my desk at work and use it regularly. While it does moisturize my hands without that greasy feeling, other hand lotions have worked better." Another writes, "While it does soften, it lacks the necessary ingredients for repairing chapped hands (one of the product's claims). Sea fennel and wakame are top ingredients, but only small amounts of allantoin (for repair) and vitamin E (for moisture) are present."
Agree? Disagree? Write your review of H2O+ Hand & Nail Cream here.
*At time of publication
SEE NEXT PAGE: The Worst Hand Cream No. 4 Origins Make A Difference Rejuvenating Hand Treatment, $20
Older comments
i've read about the new techniques of skin anti age care ...
by stylezza Monday, April 8, 2013 at 05:01AM Report as inappropriate
The L'Occitane shea butter hand cream is my favorite!!!!! It makes your hands instantly baby butt soft and isn't greasy. The lotion sinks in right away!!!!!
by maddy_c Monday, April 8, 2013 at 04:28AM Report as inappropriate
My hands have become so dry this winter. I really did need this list and will be trying some of these out. I was genuinely surprised to see Burt's Bees taking up two spots on the worst list. I always hear good things about them. Ah well.
by NillaButterfly Saturday, March 16, 2013 at 04:08PM Report as inappropriate
it's great when cheap creams make it to the top picks. but i don't really see a big difference in rating between the bottom best and the worst creams...
by AstridB Thursday, February 28, 2013 at 04:37AM Report as inappropriate
I really want to try the best number 1 hand cream now!
by PrincessBear3 Tuesday, February 26, 2013 at 01:31PM Report as inappropriate
Will try some of these thank you. Just ordered a large bottle of the Jaqua and can't wait to try it. My skin is always dry
by Alana_Danes Saturday, February 23, 2013 at 02:50PM Report as inappropriate
Agree w/you on the1's I've used. Just a FYI the hemp lotion made my skin red and sting. I'm not sensitive to anything usually, but I had a big intense skin reaction to it. jumped in shower. had to get it off
by misty_finley_clark Wednesday, February 13, 2013 at 11:48AM Report as inappropriate
You nailed most of the best, but you did leave out wonderful Neutrogena's "Norwegian Formula Hand Cream" and Anthropologie's hard-working formula.
by GigiSD Sunday, February 10, 2013 at 09:35PM Report as inappropriate
These sound about correct from what i have tried from the list!
by HxCookie Sunday, February 10, 2013 at 05:14PM Report as inappropriate
Jaqua sounds good. Need to try it.
by Amanda16 Thursday, February 7, 2013 at 09:32PM Report as inappropriate
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Science Friday® is produced by the Science Friday Initiative, a 501(c)(3) nonprofit organization.
Science Friday® and SciFri® are registered service marks of Science Friday, Inc. Site design by Pentagram; engineering by Mediapolis.
By Kaitlyn Gerber, Carleton College The other day, we attended a lecture called "Toxic and Venomous Marine Organisms." (Or something along the lines of "things that can kill you." You get the drift.) I learned something very important: Australia has many, many creatures that can kill the unsuspecting traveler. Don't get me wrong -- this is a wonderful country, and I love it here. But since we're doing fieldwork here, with a future emphasis on snorkeling, it pays to be careful. So, if you're curious, here are a few of the things I've learned about surviving in Australia -- and a few of the creatures that I'll be watching out for.
By Kaitlyn Gerber, Carleton College Exactly a week ago, I arrived in Brisbane, Australia after close to 40 hours of travel. There was no time to sleep, though -- we arrived at 8 in the morning and got to work after roughly 48 hours with no sleep. When you travel to Australia, you lose a day because you cross the international dateline. Since I'm here studying ecology, I'm going to put up some more detailed information of Australian flora and fauna in my next few posts. For now, however, here's a basic overview of the ecology of the Land Down Under.
Kaitlyn Gerber, Carleton College I was lucky enough to interview Dr. Annie Bosacker, a Visiting Assistant Professor of Biology at Carleton College, who has done significant research studying babboons in Gombe National Park, Tanzania. Her main research interest is in the social behavior of primates, specifically how social circumstances influence an individual's exposure to stress. Here, Dr. Bosacker speaks about her previous work, her interests in biology, and what it's like balancing a family and a successful career in biology.
Kaitlyn, Gerber, Carleton College For years, parental concerns regarding the dangers of heading the ball have been brushed off by players, coaches, and even FIFA, the international soccer federation. In 2001, a study conducted by the U.S. Soccer Federation and the UNC Orthopedic Clinic found that that intentionally heading the ball spreads out the impact over the entire body, minimizing risk of a concussion. But what if they were wrong?
By Kaitlyn Gerber, Carleton College Earlier this year, JCPenny's immediately discontinued a t-shirt from their store that read "I'm too pretty to do homework, so my brother has to do it for me." Customers complained that the shirt was sexist and -- more importantly -- that it conveyed the message that girls are not as intelligent as boys. But while these items may cater to a dated stereotype, they inadvertently bring up an important issue in today's society: why is there still a "gender gap" between men and women when it comes to science and technology? Could it really be that, genetically, girls are inferior when it comes to doing math?
By Kaitlyn Gerber, Carleton College Scientists have long known that the lungfish, a four-legged freshwater fish that can breathe through lungs as well as gills, is evolutionarily unique. However, a team of researchers at the University of Chicago have made another startling discovery: lungfish can "walk," using their thin limbs to lift their bodies and propel themselves along the bottoms of streams and lakes.
By Kaitlyn Gerber, Carleton College NASA's Kepler mission, which seeks to detect and analyze extraterrestrial planets of near-Earth size, has confirmed the existence of a planet that could be suitable for life. With a radius that is 2.4 times that of Earth, Kepler-22b is the smallest confirmed planet in the "habitable" zone, the region around a star where conditions could permit liquid water to form.
By Kaitlyn Gerber, Carleton College What are the physical laws that govern our universe, and how can we explain distant phenomena using basic materials here on Earth? On Wednesday, July 26, the New York Academy of Sciences hosted Professor Brian Cox, of the University of Manchester, as he introduced his new book and its accompanying Science TV series, "Wonders of the Universe."
By Kaitlyn Gerber, Carleton CollegeA new study shows that no matter how good we think we are, more often than not, liars cannot suppress all signs of a lie. But if this is true, why aren't we better at detecting lies ourselves? And is the ability to lie really programmed into our genes?
By Kaitlyn Gerber, Carleton CollegeAn extensive new study by the University of Exeter has confirmed the warning that no one wants to hear: if the current global warming trend continues, one out of every ten species could face extinction by the year 2100.
By Kaitlyn Gerber, Carleton College After a decade of research, scientists at the University of Pennsylvania have successfully transformed brain and skin cells into new heart cells, a discovery with amazing potential to fight America's leading killer of adults.
Click image above to learn more and view the photo.
By Kaitlyn Gerber, Carleton CollegeWith the warmer weather comes a variety of so-called "health tips" for surviving the summer months. But which of these are really true, and which are simply urban myths?
By Kaitlyn Gerber, Carleton CollegeLast Saturday, an Exxon-Mobil pipeline ruptured, spilling up to 42,000 gallons (approximately 1,000 barrels) of crude oil into the Yellowstone River and forcing the evacuations of many nearby residents.
To access older blog posts, navigate via the archive links in the sidebar at left.