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A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.
1. A method for depositing a single crystalline silicon film, comprising:
providing a substrate disposed within a chamber;
introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source that reacts to decelerate reactions between the silicon precursor and the chlorine-containing etchant; and
selectively depositing a crystalline Si-containing film onto the substrate.
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18. A method of depositing a crystalline Si-containing film, comprising:
providing a substrate disposed within a chamber;
introducing a silicon precursor and a chlorine gas (Cl2) to the chamber;
decelerating reactions between the silicon precursor and the chlorine gas by introducing a carbon-containing inhibitor source to the chamber; and
selectively depositing the single crystalline Si-containing film onto the substrate.
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1. Field of the Invention
This application relates generally to the deposition of silicon-containing materials in semiconductor processing. More particularly, this application relates to the selective deposition of silicon-containing films.
2. Description of the Related Art
It is often desirable to selectively deposit silicon on semiconductor surfaces without depositing on insulating surfaces. For example, heterojunction bipolar transistors are often fabricated using selective deposition techniques that deposit epitaxially-deposited single-crystal, e.g., semiconductor films only on active areas. Other transistor designs benefit from elevated source/drain structures, which provide additional silicon that can be consumed by the source/drain contact process without altering shallow junction device performance. Selective epitaxy on source/drain regions advantageously reduces the need for subsequent patterning and etch steps. Generally speaking, selective deposition takes advantage of differential nucleation during deposition on disparate materials. The precursor of choice will generally have a tendency to nucleate and grow more rapidly on one surface and less rapidly on another surface. At the beginning of a nucleation stage, discontinuous films on oxide have a high exposed surface area relative to merged, continuous films on silicon. Accordingly, an etchant added to the process will have a greater effect upon the poorly nucleating film on the oxide as compared to the rapidly nucleating film on the silicon. The relative selectivity of a process can thus be tuned by adjusting factors that affect the deposition rate, such as precursor flow rates, temperature, pressure and the rate of etching, such as etchant flow rate, temperature, pressure. Changes in each variable will generally have different effects upon etch rate and deposition rate. Typically, a selective deposition process is tuned to produce the highest deposition rate feasible on the window of interest while accomplishing no deposition in the field regions.
Selective deposition of semiconductors is of considerable commercial importance for a variety of industrial applications. Thus, there is a need for improved methods to selectively deposit silicon onto semiconductor surfaces.
An embodiment provides a method for depositing a single crystalline silicon film. The method includes providing a substrate disposed within a chamber. A silicon precursor is introduced to the chamber under chemical vapor deposition conditions. A chlorine-containing etchant is introduced to the chamber. An inhibitor source is introduced for decelerating reactions between the silicon precursor and the chlorine-containing etchant. A crystalline Si-containing film is selectively deposited onto the substrate.
Another embodiment provides a method of depositing a crystalline Si-containing film. The method includes providing a substrate disposed within a chamber. A silicon precursor and a chlorine gas are intermixed in the chamber. Exothermic reactions between the silicon precursor and the chlorine gas are decelerated by intermixing a carbon-containing inhibitor source in the chamber. A single crystalline Si-containing film is selectively deposited onto the substrate.
Another embodiment provides an apparatus for depositing semiconductor films. The apparatus includes a silicon vapor source, a chlorine-containing etchant gas source and a carrier gas source. The apparatus also includes an inhibitor vapor source selected from the group consisting of propylene, butadiene, benzene, napthalene, phenanthrene, anthracene, cycloheptatriene cation, cycloheptatriene, furan, pyridine, pyrrole and thiophene. The apparatus also includes a gas distribution network connecting the silicon vapor, chlorine-containing etchant gas, carrier gas and inhibitor vapor sources to a chemical vapor deposition chamber. The apparatus also includes a control system configured to deliver silicon vapor, chlorine-containing etchant gas, carrier gas and inhibitor vapor to the gas distribution network under conditions suited to selectively deposit a silicon-containing layer on portions of a substrate within the chamber without depositing on other portions of the substrate.
These and other embodiments are described in greater detail below.
The term "Si-containing material" and similar terms are used herein to refer to a broad variety of silicon-containing materials including without limitation Si, Si:C, SiGe, SiGe:C, Si:Sn, (Ge:Sn, Sn:C), SiGe:Sn, SiSn:C and SiGe:Sn:C. As used herein, "carbon-doped Si," "Si:C," "SiGe," "carbon-doped SiGe," "SiGe:C" and similar terms refer to materials that contain the indicated chemical elements in various proportions and, optionally, minor amounts of other elements. For example, "SiGe" is a material that comprises silicon, germanium tin and carbon, and optionally, other elements, such as Group III (B, Ga) and V (P, As, Sb) dopants. Thus, carbon-doped Si may be referred to herein as Si:C or vice versa. Terms such as "Si:C," "SiGe," and "SiGe:C" are not stoichiometric chemical formulas per se and thus are not limited to materials that contain particular ratios of the indicated elements. The percentage of a dopant such as carbon, germanium, phosphorous, arsenic or boron in a Si-containing film is expressed herein in atomic percent on a whole film basis, unless otherwise stated.
The amount of germanium, tin and/or carbon substitutionally incorporated into a Si-containing material may be determined by measuring the perpendicular lattice spacing of the doped Si-containing material by x-ray diffraction, then applying interpolation between single crystal Si and diamond (single crystal carbon), in a manner known to those skilled in the art [Salvador Kelieres, Bertil]. Those skilled in the art are aware of the relationships between substitutional doping levels, lattice spacing and strain. See, e.g., Judy L. Hoyt, "Substitutional Carbon Incorporation and Electronic Characterization of Si1-yCy/Si and Si1-x-yGexCy/Si Heterojunctions," Chapter 3 in "Silicon-Germanium Carbon Alloy," Taylor and Francis, NY, pp. 59-89, 2002. Amounts of electrically active, substitutionally incorporated dopants such as P, As, and B may be determined by electrical resistivity measurements, e.g., four point probe measurements as known to those skilled in the art.
"Substrate," as that term is used herein, refers either to the workpiece upon which deposition is desired, or the surface exposed to the deposition gas(es). For example, the substrate may be a single crystal silicon wafer, or may be a semiconductor-on-insulator ("SOI") substrate, or may be an epitaxial Si, SiGe, Ge, GeSn or III-V material deposited upon such wafers. Workpieces are not limited to wafers, but also include glass, plastic, or any other substrate employed in semiconductor processing. A mixed or patterned substrate is a substrate that has two or more different types of surfaces. For example, a mixed substrate may comprise a first surface having a first surface morphology and a second surface having a second surface morphology. In certain embodiments, doped Si-containing layers are selectively formed over single crystal semiconductor materials while minimizing and more preferably avoiding deposition over adjacent dielectrics. Examples of dielectric materials include silicon dioxide, silicon nitride, metal oxide and metal silicate. The terms "epitaxial," "epitaxially," "heteroepitaxial," "heteroepitaxially" and similar terms are used herein to refer to the deposition of a crystalline Si-containing material onto a crystalline substrate in such a way that the deposited layer adopts or follows the lattice constant of the substrate. Epitaxial deposition is homoepitaxial when the composition of the deposited layer is the same as that of the surface on which it is deposited. Epitaxial deposition is heteroepitaxial when the composition of the deposited layer is different from that of the surface on which it is deposited.
Even if the materials are made from the same element, the surfaces can be different if the morphologies or crystallinity of the surfaces are different. The processes described herein are useful for depositing Si-containing films on a variety of substrates, but are particularly useful for mixed substrates having mixed surface morphologies. Such a mixed substrate comprises a first surface having a first surface morphology and a second surface having a second surface morphology. In this context, surface morphology refers to the crystalline structure of the substrate surface. Amorphous and crystalline are examples of different morphologies. Polycrystalline morphology is a crystalline structure that consists of a disorderly arrangement of orderly crystals and thus has an intermediate degree of order. The atoms in a polycrystalline material are ordered within each of the crystals, but the crystals themselves lack long range order with respect to one another. Single crystal morphology is a crystalline structure that has a high degree of long range order on an atomic scale. Epitaxial films are characterized by a crystal structure and orientation that is identical to the substrate upon which they are grown, typically single crystal. The atoms in these materials are arranged in a lattice-like structure that persists over relatively long distances on an atomic scale. Amorphous morphology is a non-crystalline structure having a low degree of order because the atoms lack a definite periodic arrangement. Other morphologies include microcrystalline and mixtures of amorphous and crystalline material. As used herein, single-crystal is used to describe a predominantly large crystal structure that may have a tolerable number of faults therein, as is commonly employed for transistor fabrication. The skilled artisan will appreciate that crystallinity of a layer generally falls along a continuum from amorphous to polycrystalline to single-crystal; the skilled artisan can readily determine when a crystal structure can be considered single-crystal, despite low density faults. Specific examples of mixed substrates include without limitation single crystal/polycrystalline, single crystal/amorphous, single crystal/dielectric, conductor/dielectric, and semiconductor/dielectric.
Selective Deposition of Silicon With an Etchant and an Inhibitor
The selective growth of intrinsic silicon-containing epitaxial layers at low temperatures raises challenges. As an example, in order to incorporate high levels of substitutional carbon into the silicon lattice, a low temperature, e.g., ideally about 500°-600° C., and high growth rate, e.g., at least about 5 nm/min, preferably at least about 10 nm/min, are desirable. However, selective growth of intrinsic silicon typically occurs at high temperatures, such as about 800°-850° C. Moreover, conventional precursors used for the selective epitaxial growth of silicon, such as dichlorosilane or silane, typically give very low growth rates at lower temperatures, with the growth rate dropping by a factor of about 2 every 200°C. On the other hand, precursors that decompose much more easily at low temperatures, including silicon hydrides such as SiH4, Si2H6, or Si3H8, tend to form silicon nuclei on the insulator, which also leads to non-selective growth.
In order to achieve or maintain selectivity, a silicon etchant is typically added to the deposition reactants. When HCl is used as an etchant to enhance selectivity, the surface can become Cl-terminated at temperatures of about 750° C. or below. The Cl-terminated surface can lead to low growth rate due to the saturation of reactive sites. Accordingly, it is desirable to employ etchants more reactive than HCl for low temperature deposition such as at temperatures suited for high substitutional incorporation of carbon, e.g., below about 650° C. In one embodiment, Cl2 can be more effective as an etching source because of its high etch efficiency in dissolving and etching silicon nuclei. In other embodiments, however, other low temperature and aggressive etchants, and particularly chlorine-based etchants such as Cl2, may be used.
However, various exothermic reactions can occur when aggressive etchants like Cl2 are used as etchants. For example, when H2 is used as a carrier gas or generated as a byproduct of other reactions, an exothermic chain reaction of Cl2 with H2 is possible, resulting in the formation of HCl [Cl2+H2→2HCl] (−92.5 kcal/mol HCl). Silicon precursors that decompose at low temperatures can also produce highly exothermic reactions with Cl2. For example, trisilane can react with Cl2 to form HCl and considerable heat in the following reaction:
Thus, there is a need for improved methods for the selective deposition of silicon-containing films particularly at low deposition temperatures that avoid highly exothermic reactions and detrimental heat formation, while maintaining high deposition rates and selectivity.
Embodiments of the invention provide methods for selectively depositing Si-containing materials using a silicon source, an etchant, an inhibitor source and, optionally, source(s) of other elements such as electrical active dopant(s), carbon, germanium, and/or tin are used or added. Under the CVD conditions taught herein, the delivery of the silicon source, etchant and inhibitor source to the surface of a substrate preferably results in the formation of a Si-containing film selectively over single crystal substrates or single crystal regions of mixed substrates. The addition of the inhibitor decelerates or suppresses exothermic reactions with the etchant to maintain high deposition rates and selectivity at low deposition temperatures.
Exothermic reactions can cause considerable heat, and if excessively high can cause a gas mixture to self-ignite. The self-ignition of gases from rapid exothermic reactions has been found to occur immediately after mixing pure dichlorosilane and chlorine at P>1 Torr (DCS: Cl2=1:1). However, it has also been found that additions of propylene (C3H6) cause an inhibiting effect on the self-ignition of dichlorosilane mixtures with Cl2 at 293 K, as further described below. An induction period or delay for the self-ignition of gases was found to arise at P<1 Torr with the addition of C3H6, and was measured as high as 6 seconds at the lower self-ignition threshold of 0.55 Torr. Although the present application is not limited to theory, the existence of a threshold and the absence of immediate self-ignition above this threshold under experimental conditions suggest that a chain branching reaction occurs with reactive intermediaries.
A polymerization reaction typically includes chain origination, chain branching or propagation, and chain termination. Chain branching is a process in which a reactive intermediary is continuously regenerated during the course of a chemical reaction. For example, in a polymerization reaction chain branching occurs when the reactive end-groups of a polymer chain react in each propagation step with a new monomer molecule, transferring the reactive group to that unit. Chain termination occurs when any chemical reaction leads to the destruction of a reactive intermediary in a chain propagation step in the course of a polymerization reaction, effectively bringing the reaction to a halt.
Chemiluminescence and absorption spectra have shown that at least two reactive intermediaries formed during self-ignition of the dichlorosilane mixtures include the silylenes SiHCl and SiCl2. (See, e.g., C. P. Conner and E. W. Stewart, J. Am. Chem. Soc., 1977, 99, 2544; F. T. Chau, D. C. Wang, E. P. F. Lee, J. M. Dyke and D. K. W. Mok, J. Phys. Chem., A, 1999, 103, 4925). Although not limited to theory, it accordingly appears that silylene radicals participate in the chain branching reactions of the chlorination of silicon precursors. A number of chain branching reactions with reactive intermediaries such as silylene radicals, including the ones observed, such as SiHCl and SiCl2, can occur in silicon-chlorine reactions, including but not limited to the following:
Enhancing chain termination reactions can decelerate or suppress the above reactions, and delay or prevent self-ignition of the gas mixtures. One rapid chain termination reaction with a silylene radical includes the following reaction:
Other molecules may be added as inhibitors to the deposition feed gas for inhibiting the self-ignition of the gas mixtures by, for example, reacting rapidly with chain carriers and thereby increasing the chain termination of silicon-chlorine reactions. According to another embodiment, butadiene (C4H6) molecules are added to the feed gas along with a silicon source and a chlorine-containing etchant. Butadiene can stabilize silylene radicals such as :Si2H4 in the gas phase by bonding to the reactive intermediary by weak bonding forces, such as hydrogen and Van der Waals bonding, or strong bonding forces, such as donor-acceptor, covalent bonding, etc. More generally, inhibitor molecules that can bond to chain carriers such as silylene radicals and that can be added to the feed gas along with a silicon source and a chlorine-containing etchant, include but are not limited to: conjugated systems, such as compounds containing one or more sequences of alternating single and multiple, including double or triple, bonds, such as carbon-carbon or carbon-oxygen bonds. Inhibitor molecules include aromatic hydrocarbons, such as benzene, napthalene, phenanthrene, and anthracene; non-benzenoid aromatic compounds such as cycloheptatriene and aromatic annulenes; and other linear or cyclic aromatic compounds, such as furan, pyridine, pyrrole (nitrogen-containing compounds) and thiophene (sulfur-containing compound).
Conjugated systems include molecular structures that comprise alternating single and multiple bonds, such as CH2═CH—CH═CH2, CH2═CH—C≡N. In such systems, conjugation is the interaction of one p-orbital with another across an intervening σ-bond in such structures, although in other molecular entities, d-orbitals may be involved. Conjugated systems also include the analogous interaction of an element having a p-orbital with an unshared electron pair, e.g. :Cl—CH═CH2. Conjugated systems also include polyenes, which are acyclic hydrocarbons having a molecular structure containing alternating carbon-carbon double and single bonds. A cyclically conjugated molecular entity having stability, due to delocalization, that is greater than that of a hypothetical localized structure, such as a Kekulé structure, is considered as possessing 'aromatic' character. If the structure is of higher energy, e.g., less stable, than such a hypothetical classical structure, the molecular entity is considered 'antiaromatic.' The most widely used method for determining aromaticity is the observation of diatropicity in the 1H NMR spectrum. The terms 'aromatic' and 'antiaromatic' have been extended to describe the stabilization or destabilization of transition states of pericyclic reactions.
Although not limited to theory, it is possible that adducts of the above molecules that are bound by weak bonding forces can split when hitting the depositing surface. However, the inhibitor molecules nonetheless enhance the efficiency of deposition even if they only inhibit chain propagation in the gas phase prior to decomposing on the depositing surface. Even if the exothermic reactions with silylene radicals as described herein are not completely suppressed, the addition of inhibitor molecules can cause sufficient deceleration of the excessive heat emission and self-ignition that would occur in the absence of the inhibitors. Moreover, a small temperature increase may not in itself be harmful, and may even be beneficial for achieving high growth rates, particularly in a cold wall, quartz chamber.
Thus, the highly exothermic reaction of, for example, trisilane in the reaction Si3H8+10Cl2→3SiCl4+8Cl at low temperatures during the selective deposition of silicon-containing materials can be decelerated according to embodiments of the invention. Other less exothermic but significant reactions with Si2H6, SiH4, dichlorosilane (DCS), partially chlorinated disilanes and other silicon precursors can likewise be decelerated. In one embodiment, the silicon precursor and etchant source chemicals are at least as reactive, or produce at least as exothermic reactions, as mixtures containing dichlorosilane and chlorine gas (Cl2).
Accordingly, an embodiment provides a method for depositing a single crystalline silicon film, comprising: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate. The inhibitor is preferably a carbon-containing molecule, such as propylene, butadiene or benzene. According to an embodiment, the silicon source is disilane, trisilane, tetrasilane, cyclopentasilane, neopentasilane, monochlorodisilane or dichlorodisilane and the chlorine-containing etchant is chlorine gas. According to an embodiment of the invention, the Si-containing film is selectively formed over a single crystal semiconductor surface while minimizing or avoiding deposition over a dielectric surface in a ratio of preferably about>10:1. According to another embodiment, the ratio of selective deposition is about>50:1. According to yet another embodiment, the ratio of selective deposition is about 100% such that no deposition occurs on the dielectric surface at all.
Deposition may be suitably conducted according to the various CVD methods known to those skilled in the art, but an exemplary deposition process is conducted according to the CVD methods taught herein. The disclosed methods may be suitably practiced by employing CVD, including plasma-enhanced chemical vapor deposition ("PECVD") or thermal CVD, utilizing a silicon source, a chlorine-containing etchant and an inhibitor source to selectively deposit a single crystalline Si-containing film onto a substrate within a CVD chamber. In some embodiments, the Si-containing film is a carbon-doped epitaxial Si film. In the following description, reference may be made to the use of a silicon source, a chlorine-containing etchant and an inhibitor source to deposit a Si or Si-containing film. It will be recognized that those descriptions are also generally applicable to the deposition of other Si-containing films, e.g., the deposition of SiGe:C, Si:Sn, SiGe:Sn, Ge:Sn, SiSn:C, SiGe:Sn:C or Ge:Sn:C films or films involving the use of a germanium source and/or a tin source to the deposition of electrically doped Si:C, SiGe:C, Si:Sn, SiGe:Sn, Ge:Sn, SiSn:C, SiGe:Sn:C or Ge:Sn:C films or films involving the use of a dopant precursor for an electrical dopant, unless otherwise stated. Thermal CVD is preferred, as deposition can be achieved effectively without the risk of damage to substrates and equipment that can occur with plasma processing.
In an embodiment, a silicon source, a chlorine-containing etchant, an inhibitor source, and optionally an electrical dopant precursor, are introduced to the chamber in the form of separate gases or by intermixing to form a feed gas. The intermixing to form the feed gas may take place within the chamber or upstream of the chamber prior to introduction of the feed gas to the chamber. According to preferred embodiments of the invention, the silicon source, chlorine-containing etchant and inhibitor source are introduced to the chamber in separate gases in order to minimize the harmful effects of self-ignition of the gas mixtures, such as preventing those that could occur at the gas panel. Intermixing to form a feed gas can take place in the chamber upstream of the substrate.
According to one embodiment, the total pressure in the CVD chamber is in the range of about 0.001 Torr to about 1000 Torr. According to another embodiment, the total pressure in the CVD chamber is in the range of about 0.1 Torr to about 350 Torr. According to another embodiment, the total pressure in the CVD chamber is in the range of about 0.25 Torr to about 200 Torr. This latter range of 0.25 Torr to 200 Torr is sometimes referred to as "reduced pressure" CVD ("RPCVD") as distinct from even lower pressure ranges for "low pressure" CVD ("LPCVD"), which are conducted in the milliTorr range. RPCVD and atmospheric CVD carry even higher risk of damaging exothermic and potentially explosive reactions. The chamber pressure may be referred to herein as a deposition pressure. The feed gas can also include a gas or gases other than the silicon, chlorine-containing etchant and inhibitor source, such as other silicon sources, germanium sources, tin sources, etchant sources, dopant precursor(s) and/or inert carrier gases. The term "dopant precursor(s)" is used herein to refer in a general way to various materials that are precursors to various elements, such as boron, gallium, indium, arsenic, phosphorous, and/or antimony, which may be incorporated into the resulting deposited film in relatively minor amounts. It will be recognized that silicon sources may also be considered dopant precursors for the deposition of SiGe, Si:Sn or SiGe:Sn films that contain relatively minor amounts of silicon. The silicon source, if liquid under storage conditions, can be introduced to the chamber by way of a vaporizer such as a bubbler used with a carrier gas to entrain the silicon source vapor. A gas concentration sensor can measure the amount of the silicon source in the carrier gas flowing from the bubbler. Such sensors are commercially available, e.g., Piezocon® gas concentration sensors from Lorex Industries, Poughkeepsie, N.Y., USA.
Examples of suitable carrier gases for the methods described herein include He, Ar, H2, and N2. It should be understood by one skilled in the art that other suitable carrier gases may be used. However, preferably the main carrier gas, representing the largest source of gas in the system, is a non-hydrogen carrier such as He, Ar and/or N2. Hydrogen gas (H2) is most commonly used as a carrier gas in vapor deposition for semiconductor processing, and particularly in epitaxial deposition. There are several reasons for the popularity of H2H2 can be provided with a high degree of purity, and the thermal properties of hydrogen are such that it does not have as great a thermal effect on the wafer. Additionally, hydrogen has a tendency to act as a reducing agent, such that it combats the formation of native oxide that results from less than perfect sealing of the reaction chamber. However, in embodiments where Cl2 is an etchant, when free H2 is present as a carrier gas, or in large quantities, the exothermic reaction Cl2(g)+H2(g)→2HCl (g) will take place. As discussed above, this reaction in large quantities can lead to very high emission of heat as exemplified by the chain branching reactions with silylene radicals of Equations 4-6, and generate considerable HCl, thereby reducing selective deposition. Accordingly, the use of a non-hydrogen carrier gas (which is generally the dominant gas in the system) can avoid the consumption of Cl2.
Moreover, particular advantages have been found from employing a non-hydrogen carrier gas in gas mixtures for selective deposition of silicon, particular in the combination of trisilane/chlorine deposition with a substitutional dopant precursor. Preferably helium (He), argon (Ar), neon (Ne), xenon (Xe) or nitrogen gas (N2), or a combination of such inert gases, is employed in place of hydrogen. According to an embodiment, He is employed, as it has thermal behavior close to that of H2 and thus entails less tuning of the reactor for the adjustment from use of H2 carrier gas.
The silicon precursor and supplemental silicon sources may include: silane, disilane, trisilane, tetrasilane, cyclopentasilane, neopentasilane, monochlorosilane, dichlorosilane, monochlorodisilane as silicon sources. The feed gas may also contain other materials known by those skilled in the art to be useful for doping or alloying Si-containing films, as desired, such as a supplemental silicon source, germanium source, tin source, boron source, gallium source, indium source, arsenic source, phosphorous source, and/or antimony source. Specific examples of other such sources include: germane and digermane as germanium sources; monosilylmethane, disilylmethane, trisilylmethane, tetrasilylmethane, monomethyl silane (MMS), and dimethyl silane as both silicon and a supplemental source of carbon; and various dopant precursors as sources of electrical dopants (both n-type and p-type) such as antimony, arsenic, boron, gallium, indium and phosphorous. Chlorosilylmethanes of the general formula (SiH3-zClz)×CH4-x-yCly, where x is an integer in the range of 1 to 4 and where y and z are each independently zero or an integer in the range of 1 to 3, with the provisos that x+y≦4 and at least one of y and z is not zero, have been found to be particularly useful as sources of carbon, silicon and chlorine.
A suitable manifold may be used to supply feed gas(es) to the CVD chamber. The CVD chamber is preferably in a single wafer reactor, e.g., a single wafer, horizontal gas flow CVD chamber. Most preferably, the CVD chamber is in a single-wafer, single pass, laminar horizontal gas flow reactor, preferably radiantly heated. Suitable reactors of this type are commercially available, and preferred models include the Epsilon™ series of single wafer reactors commercially available from ASM America, Inc. of Phoenix, Ariz. While the methods described herein can also be employed in alternative reactors, such as a showerhead arrangement, benefits in increased uniformity and deposition rates have been found particularly effective in the horizontal, single-pass laminar gas flow arrangement of the Epsilon™ chambers, employing a rotating substrate, particularly with low process gas residence times. CVD may be conducted by introducing plasma products in situ, or downstream of a remote plasma generator, to the chamber, but as noted above, thermal CVD is preferred.
Thermal CVD is preferably conducted at a substrate temperature that is effective to deposit a crystalline Si-containing film over the substrate. Preferably, thermal CVD is conducted at a temperature less than about 750° C. According to another embodiment, thermal CVD is conducted at a temperature less than about 650° C. According to another embodiment, thermal CVD is conducted at a temperature in a range of about 500-600° C. For selective deposition of intrinsic silicon with high levels of substitutional dopants, thermal CVD is most preferably conducted at a temperature in the range of 500-600° C. PECVD is preferably conducted at a temperature in the range of about 300° C. to about 700° C. Those skilled in the art can adjust these temperature ranges to take into account the realities of actual manufacturing, e.g., preservation of thermal budget, deposition rate, different sizes of chambers, including single wafer and batch reactors, preferred total pressures and partial pressures, etc. In general, higher partial pressures entail lower temperatures for a given desired result, whether it be deposition rate, layer quality or a combination of the two. The substrate can be heated by a variety of methods known in the art, e.g., resistive heating and lamp heating.
Doped Silicon-Containing Films
According to embodiments of the invention, an inhibitor source for decelerating exothermic reactions between a silicon precursor and chlorine-containing etchant contains carbon-containing molecules including but not limited to, for example, propylene, butadiene, benzene, napthalene, phenanthrene, anthracene, cycloheptatriene cation, cycloheptatriene, furan, pyridine, pyrrole and thiophene. According to embodiments, the carbon-containing inhibitor source is the source for carbon incorporation in the Si-containing film. Thus, the single crystalline Si-containing films may be substitutionally doped with carbon, e.g., where the dopants replace Si in the lattice structure. According to an embodiment, the inhibitor source is the only source for substitutional carbon in the Si-containing film. According to another embodiment, supplemental carbon sources may be used in addition to the inhibitor source to provide for substitutional doping of carbon. As is known in the art, the lattice constant for single crystal silicon is about 5.431 Å, whereas single crystal carbon in the form of diamond has a lattice constant of 3.567 Å due to the small size of the carbon atoms. Accordingly, tensile strain may be introduced into single crystalline silicon by substitutional doping with carbon, because carbon atoms are smaller than the silicon atoms that they replace.
In some embodiments, the thickness of a single crystalline silicon film comprising a strain-modifying amount of substitutional carbon as described herein is preferably less than a critical film thickness. Those skilled in the art understand that a critical film thickness is a film thickness at which a strained film relaxes under a particular set of conditions. As the concentration of substitutional dopant (e.g. carbon) increases, the critical thickness generally decreases. Films having a thickness less than the critical thickness typically remain strained under those conditions. For example, a single crystalline silicon film comprising about 1.8 atomic % substitutional carbon may have a critical thickness of about 200 mn at 550° C., whereas an otherwise similar film comprising 3.5 atomic % substitutional carbon may have a critical thickness of about 15-20 mn at the same temperature. Films having a thickness that is less than a critical thickness for that film will tend to remain strained unless or until sufficiently perturbed, or exposed to sufficient heat to cause relaxation. In an embodiment, a Si:C, SiGe, SiGe:C, Si:Sn or Ge:Sn film is configured to exert a strain on an adjacent layer. For example, a tensile strain may be exerted on a Ge film that is deposited onto a relaxed Ge:Sn layer. In another example, a compressive strain may be exerted on a Ge:Sn film that is deposited onto a relaxed Ge layer. In an embodiment, a strained Si:C film that is selectively formed in a recessed source/drain region exerts a tensile strain on a silicon channel formed between the source and drain, as described in greater detail below. Such configurations may be used in various applications, e.g., to improve electron mobility for NMOS devices. In another embodiment, a strained SiGe film that is selectively formed in a recessed source/drain region exerts a tensile strain on a germanium channel formed between the source and drain. Such configurations may also be used to improve electron mobility for NMOS devices. In another embodiment, a strained Ge:Sn film that is selectively formed in a recessed source/drain region exerts a compressive strain on a germanium channel formed between the source and drain. Such configurations may be used in various applications, e.g., to improve hole mobility for PMOS devices.
The single crystalline Si-containing films may further comprise an electrically active dopant, e.g., a dopant selected from the group consisting of phosphorous and arsenic for NMOS applications. Incorporation of electrically active dopants into Si-containing films by CVD is preferably accomplished by in-situ doping using dopant sources or dopant precursors. Preferred precursors for electrical dopants are dopant hydrides, including p-type dopant precursors such as diborane, deuterated diborane, and n-type dopant precursors such as phosphine, arsenic vapor, and arsine. Silylphosphines, e.g., (H3Si)3-xPRx, and silylarsines, e.g., (H3Si)3-xAsRx, where x=0-2 and Rx=H and/or deuterium (D), are alternative precursors for phosphorous and arsenic dopants. SbH3 and trimethylindium are alternative sources of antimony and indium, respectively. Such dopant precursors are useful for the preparation of preferred films as described below, preferably boron-, phosphorous-, antimony-, indium-, and arsenic-doped silicon, Si:C, SiGe, SiGeC, SiGe:Sn:C, SiGe:Sn, Si:Sn:C, SiSn and Ge:Sn films and alloys. The amount of dopant precursor in the feed gas may be adjusted to provide the desired level of dopant in the Si-containing film. Preferred concentrations of dopant precursor in the feed gas are in the range of about 1 part per billion "ppb" to about 20% by weight based on the total weight of reactive gas, excluding inert carrier and diluent gases.
For the inhibitor source such as olefin, butadiene, etc., concentrations in the feed gas can be in the range of about 1 standard cubic centimeters per minute "sccm" up to about 100 sccm, although higher or lower amounts are sometimes preferred in order to achieve the desired property in the resulting film. For electrical dopants, preferred concentrations of dopant precursor, such as pure phosphine or equivalent diluted phosphine, arsine or diborane, in the feed gas can be between about 0.1 sccm to about 5 sccm, although higher or lower amounts are sometimes preferred in order to achieve the desired property in the resulting film. In the preferred Epsilon™ series of single wafer reactors, dilute mixtures of the dopant precursor in a carrier gas can be delivered to the reactor via a mass flow controller with set points ranging from about 3 sccm to about 1000 sccm, depending on desired dopant concentration and dopant gas concentration. Dilution of dopant gases can lead to factors of 10−7 to 10−2 to arrive at equivalent pure dopant flow rates. Typically commercially available dopant sources are dopant hydrides diluted in H2, e.g., 1% arsine or 1% phosphine in H2. However, as described above with respect to preferred non-hydrogen carrier gases, in some embodiments dopant precursors are diluted in a non-hydrogen inert gas. The dilute mixture is preferably further diluted by mixing with the silicon source, chlorine-containing etchant, a suitable carrier gas, and the inhibitor source which also acts as a strain-influencing sour for substitutional doping. Since typical total flow rates for deposition in the preferred Epsilon™ series reactors often range from about 5 standard liters per minute ("slm") to about 50 slm, the concentration of the dopant precursor used in such a method is generally small relative to total flow.
The relative amounts of the various feed gas components may be varied over a broad range depending on the composition desired for the resulting Si-containing film and the deposition conditions employed, such as temperature, pressure, deposition rate, etc., and may be determined by routine experimentation in view of the guidance provided herein. The feed gas components may be intermixed and then delivered to the chamber or substrate. However, according to preferred embodiments of the invention, the feed gas is formed by mixing the components in the chamber upstream of the substrate, e.g., by supplying the feed gas components to the CVD chamber separately.
Process Integration
In the embodiments of
The elevated S/D structure 32 of
The selective nature of the silicon source/chlorine/inhibitor process obviates subsequent pattern and etch steps to remove excess deposition from over field regions. Even imperfect selectivity can permit use of a timed wet etch to remove unwanted deposition over insulating surfaces, rather than requiring an expensive mask step. Furthermore, superior film quality is obtained at relatively high deposition rates, improving throughput. For example, certain process embodiments may be used to selectively deposit boron-doped SiGeC using a silicon source, methylsilane, B2H6, chlorine and inhibitor source to form, e.g., a base structure of a heterobipolar transistor ("HBT").
The flow through this MFC 112 merges with the main carrier gas through the main carrier gas MFC 114 and other reactants at valve 140, upstream of the injection manifold 120 for the deposition chamber 122. The flow through MFC 112, MFC 114 or valves for other reactants is determined at a gas panel (not shown), which is typically a panel that includes valves to all the sources and all the MFC's shown in
As illustrated, the reactor system 100 also includes a central controller 150, electrically connected to the various controllable components of the system 100. The controller is programmed to regulate gas flows, temperatures, pressures, etc., to practice the deposition processes as described herein upon a substrate housed within the reaction chamber 122. As will be appreciated by the skilled artisan, the controller 150 typically includes a memory and a microprocessor, and may be programmed by software, hardwired or a combination of the two, and the functionality of the controller may be distributed among processors located in different physical locations. Accordingly, the controller 150 can also represent a plurality of controllers distributed through the system 100.
In the illustrated embodiment, with the carbon-containing inhibitor source 132 in combination with trisilane and chlorine, selective deposition of a Si-containing layer at low deposition temperatures can be achieved, as disclosed hereinabove. In another embodiment, the dopant hydride source 134 is preferably also provided to produce in situ doped semiconductor layers with enhanced conductivity. According to an embodiment, a boron source such as diborane (B2H6) is provided as the dopant hydride source 134 along with a germane source and/or tin source (not illustrated) for SiGe, SiGeSn or GeSn epitaxy, and the layer is electrically doped. Preferably, for Si:C epitaxy with carbon-containing inhibitor 136 and optionally with supplemental carbon source MMS 132, the dopant hydride is arsine or phosphine, and the layer is n-type doped. More preferably, the diluent inert gas for the dopant hydride is a non-hydrogen inert gas as noted above. Thus, the MMS, phosphine and the inhibitor are preferably stored at their source containers 132, 134 and 136 in, e.g., helium. Typical dopant hydride concentrations are 0.1% to 5% in helium, more typically 0.5% to 1.0% in helium for arsine and phosphine. Typical inhibitor source concentrations are 5% to 50% in helium, more preferably 10% to 30% in helium.
Selective deposition of Si-containing films with inhibitor molecules along with a silicon source and chlorine-containing etchant as described herein offer significant advantages over the use of conventional precursors when conducted as described herein. In particular, high growth rates (at least about 5 nm/min, preferably at least about 10 nm/min) and high etch capabilities of a silicon etchant as desired for the selective deposition of Si-containing films are enabled at low deposition temperatures, e.g., at a deposition temperature below about 750° C. In other words, high deposition rates can be achieved while still maintaining selectivity. Moreover, the process is highly tunable by adjusting the amount of inhibitor molecules that are added to the feed gas.
The embodiments illustrated and described above are provided only as examples of certain preferred embodiments. Various changes and modifications can be made to the embodiments presented herein by those skilled in the art without departure from the spirit and scope of the disclosure, which is limited only by the appended claims.
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text:
A remote place for couch potatoes
Monthly Archive for March, 2007
Kicking back
Paul DiMeo relaxed in a Colonie hotel conference room Friday morning. He had done a round of media calls, talking about how the Oatman project was special. DiMeo, a 49-year-old Philly area native, said he sometimes watches the show and thinks, "That's not the week I just lived." That's because the show is not likely […] [Read More]
Think of the neighbors
After ABC packs up, you may want to take a drive down Fairway Lane and see the home. It's your right. It's a public street. But this is not a through-street; the house is at the end of a cul-de-sac not built nor used to traffic. Bottom line: Just keep in mind that neighbors have […] [Read More]
`Pay It Forward'
Here is the story from today. [Read More]
Hey, whaddya know: It's a story
WNYT Ch. 13 showed up today. Finally. [Read More]
A long day
The "reveal" to the family happened an hour or so later than originally scheduled. But spectators started arriving shortly after dawn. A hundred yards or so from the house, several hundred fans had packed into a barricaded pen at 10 a.m., carrying signs and chanting, "We Want Ty! We Want Ty!" They had another five […] [Read More]
A volunteer's view
An e-mail from just one volunteer, Susan Sims of Colonie: I signed up around midnight on Thursday the 22nd and they called me just after I had gotten to work on Friday evening at 5:30 p.m. I was so excited that I had three shifts given to me. I had signed up for 5 p.m. […] [Read More]
The bus — and family — are moved
As crowds chanted, "Move that bus!" Debbie Oatman and her family were introduced to their new home. The family arrived by limo at 3:05 p.m. and were greeted outside the house by host Ty Pennington. Debbie Oatman sobbed as she hugged Pennington and wiped tears as she waved to the crowd, estimated to be 4,000 […] [Read More]
Listen to a volunteer
A conversation with Times Union staffer Carin Lane, a volunteer at the Extreme Makeover: Home Edition in Colonie, March 2007. [Read More]
Show More

subset: commoncrawl


text:
We Talk Over Microsoft's Gamescom Press Conference
Become Premium to Watch
This re-release seems unnecessary at first glance, but the conclusion of Kratos' journey serves up a level of spectacle that remains impressive in 2015.
Her Story is a bold and largely successful experiment in interactive crime fiction.
Rocksteady's gorgeous-looking third Arkham game refines its open-world format a bit and lets you drive a whole hell of a lot of Batmobile.
Game »
consists of 5 releases.
Released Oct 16, 2007
About a Blob is the first entry in the fledgling Tales From Space series. It's a puzzle-platformer about a race of Blobs that eat and grow along the way. Featuring a retro monster movie art style, it supports Single-player and Co-operative gameplay.
Play as a quick-witted natural disaster, and wreak havoc down below.
You are put in the shoes of the titular, happy-go-lucky Munchables, a hungry race of googly-eyed, brightly colored things that must defend themselves against Don Onion & his Space Pirates by eating them. Space Pirate consumption means bigger Munchables.
Noby Noby Boy is the much awaited follow up to the Katamari Damacy series by eccentric artist and employee of Namco-Bandai, Keita Takahashi. Players control an unusual entity named BOY in surreal, randomly generated, physics-based sandbox worlds.
A unique puzzle game exclusive to the DS, the more your dog eats the bigger it becomes.
Tornado incorporates a unique gameplay mechanic that has players transforming into tornadoes so that they may collect stolen items from Earth and return them to their proper locations.
Mix and match colors to paint de world, and defeat de evil I.N.K.T. Corporation, in this colourful "splatformer" from THQ.
A sinister storybook-like series that introduces the dwarf Grimm who is on a quest to return his classic stories to their original, macabre versions.
The Wonderful End of the World is a PC-only puzzle-action item collection game, similar to Katamari Damacy.
flOw was conceived as a college project by creator Jenova Chen, whose company later ported the game to the PlayStation Network with upgraded graphics and motion control.
Designed by Alexey Pajitnov, best known as the original creator of Tetris. It was originally released on the MSN Games service in July 2003, later it came pre-installed on the Xbox 360, and further down the line MumboJumbo released a retail version for the PC called Hexic Deluxe.
Catch suitcases flying out of planes, and watch out for bombs.
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text:
Wine 4 Red Sangria 1 1
Wow! Upon a recommendation from a staff member at WM I picked up a box. At checkout it rang up as $1.78. Turns out they were just marked as clearance. After checking the expiration dates, the most we could come up with was they're discontinuing it or changing the box design or something. I walked out with 4 boxes for a little under 8$...that's equivalent of 16 bottles! I have not yet tried it--a box is in the fridge now...but hopefully it's as good as the white sangria reviews. April 30, 2014
1-1 of 1


text:
Arizona copper mine strike of 1983
|This article's tone or style may not reflect the encyclopedic tone used on Wikipedia. (April 2014)
The Arizona copper mine strike of 1983 began as a bargaining dispute between the Phelps Dodge Corporation and a group of union copper miners. The subsequent strike lasted nearly three years and is regarded as an important moment in the history of the United States labor movement[1]
|This section is too long to read comfortably, and needs subsections. (April 2014)
In 1981, the price of copper plummeted from a high of $1.40 in February 1981 to $.75 (seventy-five cents) per pound by December 18, 1981, resulting in losses for the entire copper industry. During 1981, the copper industry, as a whole, laid off approximately 50%, or 11,000 workers statewide. Phelps Dodge continued to operate with full manpower throughout most of 1981, although they continued to lose money.
In December 1981, Phelps Dodge announced that it would lay off 108 workers in Arizona and New Mexico on January 3, 1982, and place the rest of the workers on a four-day work week in order to minimize the impact of the layoffs. In doing so, unlike the rest of the copper industry, Phelps Dodge was able to continue to operate and pay their workers, while reducing their production by 20%.[2]
Phelps Dodge announced salary cuts to management personnel, and laid off 100 salaried employees. On April 7, 1982, Phelps Dodge announced it would lay off all 3,400 of its hourly workers in Texas and Arizona, because of its losses. Not only did Phelps Dodge lay off workers, but a total of approximately 12,000 copper workers had been laid off across the industry. None of the copper mines in Arizona continued to operate.
Company chairman George B. Munroe decided to hold a series of "town hall meetings" to talk directly to the workers. "The copper you produce here", he told the miners, had to compete with copper produced in Canada, South America, Africa, Asia, Europe, and Australia. Essentially the price for copper is the same all over the world. And no U. S. producer can continue operating for very long when its cost of producing a pound of copper approaches or exceeds the price for which it can be sold. Munroe also pointed out that Arizona miners wages had risen at an annual rate of nearly 15 percent during the 1970s, while the average U. S. manufacturing employee had seen only a 10 percent increase.[3]
"The same eight dollars that Phelps Dodge pays for forty minutes of work", Munroe went on to say, "would buy more than a full shift of work from the average mining employee at a large South American copper company."[citation needed] Many of the unions in other industries had already agreed to pay cuts. Munroe said that the copper industry could be no exception.
Although copper prices remained stagnant throughout 1982, Phelps Dodge ended its shutdown, calling more than half the work force back about five months after Munroe's visits.[4] All of the other copper companies continued their shutdown.
Over one year later, in May 1983, the copper mining company began negotiations with the United Steelworkers and other unions in Phoenix, Arizona. The unions agreed to a freeze of their members' wages for three years, but attempted to bargain for cost-of-living adjustments (COLA) and to prevent job combinations.[5] In recent years, similar agreements had been accepted by other mining corporations, including Kennecott, Asarco, Magma Copper, and Inspiration Consolidated Copper. Though these companies struck an agreement with the union, none of them were operating; only Phelps Dodge remained operational. However, Phelps Dodge was facing competition from overseas producers during a particularly low period of metals pricing. Increased media scrutiny, highlighted by the July 1983 cover of Business Week, declaring a "Management Crisis at Phelps Dodge", implicated chairman George B. Munroe in the company's financial woes.
The strike[edit]
The subsequent negotiations with the unions failed to lead to an agreement, and on midnight of July 30 a strike began, including workers from Morenci, Ajo, Clifton, and Douglas, Arizona. Thousands of miners walked out and a picket line was formed at the Morenci Mine. The next day, Phelps Dodge increased security personnel in and around the mine. Within days, miners were subject to firings, evictions,[citation needed] and undercover surveillance by the Arizona Criminal Intelligence Systems Agency.[6] At the beginning of August, Phelps Dodge announced that they would be hiring permanent replacement workers for the Morenci Mine. The company took out large employment ads for new workers in the Tucson and Phoenix newspapers. Meanwhile, the local government passed injunctions limiting both picketing and demonstrations at the mine.
The company offered new workers virtually the same deal it had offered the unions, who turned them down. Instead of an annual cost of living raise pegged to inflation, Phelps Dodge offered an annual wage review pinned to the price of copper. If copper increased, employees would receive a raise. They offered new workers $7.00 an hour instead of over $9.00. Instead of offering free doctor visits in the company hospital, they began to require a $5.00 co-pay. The union bosses turned this down, but hundreds of workers from Tucson and Phoenix accepted it. Eventually, many of the union workers went back to work as well.[citation needed]
Throughout the day, approximately 1,000 strikers and their supporters gathered at the gate to the mine in response to the company's announcement that they would hire new workers. Phelps Dodge stopped production and, later that day, Arizona Governor Bruce Babbitt flew in to meet with the company, and persuaded the company to shut down for 24 hours. Phelps Dodge agreed to continue the shutdown for ten days, along with a ten-day moratorium on hiring replacement workers, and it was decided that a federal mediator would be called in for negotiations.
Assisted by a display of military force, on the morning of August 19, Phelps Dodge smoothly reopened and appeared to get the upper hand in the 51-day siege by the United Steelworkers Union. Military vehicles, tanks, helicopters, 426 state troopers and 325 National Guard members arrived in Clifton and Morenci as part of "Operation Copper Nugget" to end the violence.[citation needed] Entering replacement workers were subjected to obscene gestures, name calling, and threats of violence. Strikers at the gate were unable to prevent the replacement workers from entering the mine. Eight days later, 10 strikers were arrested in Ajo and charged with rioting. From that point on, the strike lost much of its momentum. Some of the laid off workers returned to work and crossed the picket line. However, there continued to be outbreaks of violence, and workers being subjected to shouting and name calling when going to work. On several occasions, strikers blocked the highway from Safford to Morenci, preventing workers from reporting for duty.
In September 1984, all the workers voted whether they wanted to be represented by the unions or not. Almost unanimously, the workers voted out the unions. After a series of confrontations and controversies, the strike officially ended on February 19, 1986, when the National Labor Relations Board rejected appeals from the unions attempting to halt decertification.[citation needed]
Shortly after the strike ended, world copper prices began to climb. This and the introduction of new mining technology led to a marked increase in profits at Phelps Dodge. While their annual profits in 1985 were just $29.5 million, profits rapidly climbed to $205.7 million in 1987 and $420 million in 1988. In 1989, the Wall Street Journal published a front page story describing how Phelps Dodge restructured and avoided bankruptcy.[7] The Arizona copper mine strike would later become a symbol of defeat for American unions. The Economics of Labor Markets and The Transformation of American Industrial Relations singled out the Arizona strike as the start of overt company strikebreaking in the 1980s.[citation needed] Journalists referred to the miners' strike as a precedent for subsequent labor failures.
- ^ Rosenblum, Jonathan D. Copper Crucible: How the Arizona Miners' Strike of 1983 Recast Labor-Management Relations in America, Ithaca, N.Y.: ILR Press, 1995, p.217.
- ^ Kingman Daily Miner, December 18, 1981
- ^ Copper Crucible: how the Arizona miners' strike of 1983 recast labor
- ^ Copper Crucible: how the Arizona miner's strike of 1983 recast labor, by Jonathan D Rosenblaum
- ^ Book On 1983 Copper Strike Draws Wrong Lessons, The Militant, Dan Fein, August 21, 1995
- ^ Union Busting: How Arizona's 'CIA' Helped Phelps Dodge Destroy The Unions, Tucson Weekly, Jonathan Rosenblum, June 29-July 5, 1995
- ^ Swasy, A., Long road back: How Phelps Dodge struggled to survive and prospered again, Wall Street Journal, November 24, 1989
Further reading[edit]
- Kingsolver, Barbara. Holding the Line: Women in the Great Arizona Mine Strike of 1983. Ithaca, N.Y.: ILR Press, 1989.
- Rosenblum, Jonathan. Copper Crucible: How the Arizona Miner's Strike of 1983 Recast Labor-Management Relations in America. Ithaca, N.Y.: ILR Press, 1995.


text:
The Kryptonite New York Fahgettaboudit Chain and Padlock is the ultimate chain lock for high theft areas. With 14mm six sided chain links made of triple heat-treated boron manganese for the ultimate strength in a…
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For UK next day delivery
The Kryptonite New York Fahgettaboudit Chain and Padlock is the ultimate chain lock for high theft areas. With 14mm six sided chain links made of triple heat-treated boron manganese for the ultimate strength in a chain, Narrow inner width of individual links defends against leverage attacks. Includes maximum security New York disc lock with 14mm hardened steel shackle, Hardened steel sleeve over crossbar for double security, Double deadbolt locking for extensive holding power. Sliding dustcover protects cylinder and the Durable nylon protective cover prevents scratching your precious equipment. Approved to Gold Sold Secure standard.
- Construction:
14mm six-sided chain links made of 3t hardened manganese steel, Includes maximum security New York Disc Lock with 15mm MAX-Performance steel shackle, Patented, oval hardened steel crossbar for extra security, Hardened double deadbolt locking for extensive holding power, High security disc-style cylinder
- Size:
5' (150cm) chain length, 15mm shackle diameter
- Unlock Method:
Stainless steel keys – one lighted with high intensity bulb and replaceable battery
- Sold Secure Rating:
Level 10
- Weight:
15.25lbs (6.92kgs)
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text:
national Council on Systems Engineering [INCOSE], and the System of Systems Center of Excellence) is paying increasing attention to issues of SoS, complex systems, and enterprise systems domains. In this report, the committee has loosely used the term SE to apply to tools, techniques, and processes for all of these domains.
Primary products of good SE are robust and efficient architectures. Architectures are multidimensional representations or combinations of "what, how,


text:
How to Wake Up Faster… (so you won't be late for work, again)
|July 2, 2012
|Posted by Dave under Health, Job, Life, School, Work
Waking up is a bitch. You know that feeling when your body is still totally engulfed in sleep, but that loud-ass alarm clock is annoying the hell out of you? Yeah, waking up is a bitch.
There's nothing more you'd rather do than get two more hours of sleep… but you gotta get up. You know, because your boss from hell is ready to chew your ass if you're late… again.
Or school, getting up early for school is annoying.
So here are 8 tips to screw your system and wake up faster!
Disclaimer: when your body is resisting waking up, it means you're still in REM (rapid eye movement) when the alarm blew off. This means, your brain was still too busy repairing your body from all that self-inflicted damage you induced yourself through, by that stressful life you chose to live.
1. Put the alarm clock far away from you
There's nothing more annoying than having to get up because that damn alarm is pissing you off in the morning. And by the time you get back to bed, you'd already be pissed off (and be a little bit awake).
And yes, if your alarm clock is close by, you're just gonna hit snooze and sleep again. And be late for work, again.
Wisdom from the Almighty Universe: Alarm clocks are the most annoying sons-of-bitches in the universe. Trust me when I say this, I am the Master of the Universe.
2. For desperate measures, leave coffee by your bedside.
I know, I know, lukewarm coffee is sacrilegious for coffee lovers. That's why I said "desperate measures," didn't I?
Alternative: Have iced or cold coffee instead, and leave it inside a small cooler. It should still be cold enough come morning.
3. Open windows
Having sunlight in at dawn, stops your body from producing melatonin (hormones that regulate sleep), and tells your brain that it's morning already. Time to wake up, biatch!
Alternative: (for enclosed apartments with barely any sun shining in)
Just turn the damn lights on. This will require more effort though. So keep your alarm clock far away from you, when your get up to hit snooze, turn on the lights on your way back.
4. Highway to mental breakdown
Didn't I just say alarm clocks are the most annoying things in the universe? I lied... So what could be more annoying than having an alarm clock?
Two alarm clocks!
Sheesh, this is for desperate times only. Warning: having two alarms every morning is the fastest way to a mental breakdown.
5. Stretch
Having blood circulate through your body will get you pumped up with energy, making it easier to wake up.
Add-on goodie: Pull your hair!
This can be a bit nasty (and painful), but pulling your hair is the fastest way to get blood to circulate through your head.
6. Wet yourself
It's not as disgusting as it sounds. Leave a wet towel in a bowl by your bedside, and wet yourself in the morning. This is an oldie but goodie. It works!
Note: The colder, the better. Cold water on your face will get the blood flowing through your head faster.
7. Minty freshness
Ever wonder why so many car-fresheners are mint? That's because mint is the stimulant that keeps your brain awake! Ergo, mint is great for long drives.
Keep a mint freshener inside a sealed container (because it can keep you awake at night), and sniff it by morning. Effervescent oils work too. And so do doublemint gums, mentos, etc.
8. And the grand finale, Boom that Adrenaline!
I used to program my mini-component as my alarm clock. I program it to turn on the next morning to a rock station or to my very own rock cds. Crank up the volume!
Most radio/components have that feature. Or you can use your desktop as your alarm clock. Set it loud in the morning. There's a bunch of free alarm software(s) all over the web, I'm too lazy to search (I used to have it).
Or it will work with your iPod, iPhone, whatever, too. Hook it up to a loud speaker and set it to BOOM the next day! Cool!
Nothing wakes us up in the morning faster than adrenaline!
And by the way, again, disclaimer: forcing yourself to wake up every morning, until you're 65, is a really fucked up way to live.
And so, tip 9! The best tip of all… (Wait, Didn't I say "only 8 tips?" Whatever…)
9. Reprogram your life, so you won't be forced to wake up early anymore
Don't wake up for somebody else's sake anymore… Not for that damn boss, or for school (your boss is mean, and your professor is boring), not for anybody else again! That way, the only thing that wakes you up in the morning, is that crying baby.
Just because the "traditional old people" who worked their butts off (for somebody else) all their lives told you, "that's the only way to live, you have to wake up early every morning and work for somebody else,"—– doesn't make it so.
Find yourself, be your own man, be your own boss! And more importantly, live free.
About Dave
You've been had. You've been blind. You've been asleep. You've been bound. You are a prisoner. Now wake up! Smell freedom! Engulf yourself in the beauty of nature! Be free! For the first time, stop listening to others and DO WHAT YOU WANT! Be free, my friend. Soar and be free.Web | Facebook | More Posts
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Temporary Certificate of Occupancy (TCO)
Application and Deposit information for TCO can be obtained from One Stop Shop.
The following are the minimum requirements for Temp C of O:
- Paperwork completed & deposit or Irrevocable Letter of Credit submitted before scheduling the 25, 32, 36, and 13.
- Lock Out/Tag Out Agreement to be filled out & handed in.
The following inspections need to be scheduled & approved prior to requesting the Temporary Certificate of Occupancy inspection:
- #36 - final fire approval - contact Scottsdale Fire Dept. @ 312-1855
- #32 - temporary site approval - contact Building Inspection @ 312-5750
- #13 - temporary off-site approval - contact Field Engineering @ 312-5750
When you get the above approvals, then schedule a #25 (Temporary C of O) inspection.
Only after all inspections are approved can you legally occupy the home.
We are ready to assist you in this endeavor. Please phone 312-5750 if you have questions or concerns.
Inspections Required for Temporary Certificate of Occupancy (TCO)
Inspection types 013, 032, 036 (037 on Commercial or Multi-Family) MUST be requested and approved before requesting the 025. After the 025 approval the TCO will be issued. Without application, deposit and approvals, no occupancy is allowed.
For your convenience, inspections are listed in the order they are typically requested.
|Inspection Type
|TCO Off-Site
|Completed By: Public Works
Required on all Commercial, Multi-Family and SFR structures prior to the issuance of the TCO.
Inspection to assure all offsite work (if any) is in compliance with MAG specification and approved plans. 013 must be approved before 025 is approved.
|TCO On-Site
|Completed By: Building Inspections
Required on all Commercial, Multi-Family and SFR structures prior to the issuance of the TCO.
Inspection to assure compliance with DRB stipulations and city approved plans. 032 must be approved before 025 is approved.
|TCO Fire
|Completed By: Fire Inspections
Request 036 on Commercial, Multi-Family and SFR structures.
Inspection to assure compliance with Fire Code, city approved fire plans and amending ordinance. An approved tag will be left in the electric panel on SFR after fire inspection is approved. 036 must be approved prior to 025 approval.
|Backflow Preventer
|Required on Commercial or Multi-Family.
2 inspections required: 1st inspection - to check size, type, and location per city approved plans and to check the installation per city approved detail; 2nd inspection - to check testing and certification by an approved testing agency prior to issuance of either a TCO or FCO. 037 must be tested, certified and approved before 025 is approved.
|TCO Building
|Inspection includes building, electrical, mechanical and plumbing inspections to assure compliance with city codes, city approved plans and amending ordinances.
For more informations contact Inspection Services, 480-312-5750.


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Hands up who saw Kelly Rowland in her androgynous tux on the Sunday night edition of X Factor? Yes I watch it, it's a guilty pleasure but lets focus on her look as opposed to the reality show circus – what did you think of it? I LOVED it but then I'm a bit of a sucker when it comes to the whole androgynous trend and especially in a YSL Le Smoking vibe.
A simple white shirt tucked into trousers, slicked back hair, brogues or a sleek double breasted coat slung casually around the shoulders all add a touch of mannish tailoring. Wear as separate elements or all together if you're really going for it. This season I've succumbed to buying a pair of brogues, these in fact which really didn't break the bank at £20 and are so comfortable to walk in, and my Jaeger London coat that I recently snaffled at Bicester Village has a air of Man Up about it.
I think it's a great trend to play with as the variables are all pieces that would make the perfect addition to any wardrobe
To saving you stealing from your mans wardrobe, here are a few of my favourite pieces to bring a little masculinity into the mix. For evening switch a crisp white shirt for something in silk, throw in a sequin or two and swap the brogues for glossy patent pointed courts.
Satin detail city coat – £279 Isabella Oliver 365 Collection, White fitted shirt – £65 The White Company, Sportmax Black Belbo felt peaked Fedora – £98 My-Wardrobe.com, Kenneth lace up brogues – £55 Topshop, Moschino Cheap & Chic black pleat front trousers – £260 My-Wardrobe.com,
MICHAEL by Michael Kors Sequin pleat front pant – £215 My-Wardrobe.com, Oyster satin collar blazer – £49 Dorothy Perkins, Elliot courts – £195 Kurt Geiger London, Silk shirt – £89 Pure Collection,


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In 2009: Redshirted the season, he was named the Offensive Scout Team Player of the Week prior to the Maryland game ... Originally signed with NC State in the spring of 2008, but attended Hargrave Military Academy ... Enrolled in January and went through spring drills.
Prep: Played offensive guard and tackle at Hargrave for Coach Robert Prunty ... Was ranked as the nation's No. 11 Prep school player in the nation after his high school campaign... Also earned the Military Order of the World Wars Leadership Award ... An all-conference performer for David Riggs at Fuquay-Varina High School, where he played defensive end and offensive tackle ... Enrolled in the first-year college program. Born 11/7/89.


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Anxiety: Stress & Worry Anxiety: Stress & Worry • What Is Anxiety? • What Causes Anxiety? • Dangers Of Anxiety • Overcoming The Problem What is Anxiety? • Distress about future, either near or distant, uncertainties… – It is characterized by mental agitation and uneasiness – It may be mild or severe • Tears at the soul, keeps us up at night, consumes our thoughts, causes stress. • A direct attack from Satan. (1 Pet. 5:6-8) – Paralyzes Christians from being effective – Draws them to sins to distract them from their work What is Anxiety? 8% Legitimate Concerns 40% 10% Never Petty Happen Miscellaneous 12% Health 30% Past, or Cannot Be Changed What Causes Anxiety? • Anxiety is caused by real or imagined threats to our well being. – We feel vulnerable and inadequately protected against these threats – Threats such as social rejection, physical injury or disease, poverty, death, and a wide range of other threats What Causes Anxiety? • Anxiety has three main elements: – Insecurity: "Something bad is going to happen to me." – Helplessness: "There is nothing I can do." – Isolation: "There is no one to help me." – These causes may operate individually or in various combinations • Emotionally, they cause just as much anxiety if they are imagined as if they were real Dangers of Anxiety (Matt. 6:24-34) • Directly opposes God's commands – v. 25, 31, 34; Phil. 4:6; 1 Pet. 5:7 • Demotes human worth - v. 26 • Futile - v. 27, 32; Mk. 16:3-4 • Causes people to rely on themselves – v. 30; 8:26; 14:31; 16:8 • Heathenistic - v.32 • Deters from Christian duty - Eph. 5:15-16 • Impairs health - 1 Cor. 6:20 • Creates lack of trust – Jas. 1:5,6; Mk. 11:24 • Chokes the Word in Christian's life - Luke 8:14 • Robs Christian of joy, peace, and happiness – Phil. 4:4, 1 Thes. 5:17; Prov. 17:22 Overcoming Anxiety • Trust In God… – The best remedy is to deal with the problem's causes, not just its symptoms – What is the truth about insecurity, helplessness, and isolation with regard to the Christian? • While the Christian may feel insecure, the reality is that he is very secure - Pro. 3:21-26; Heb. 4:16 • While the Christian may feel helpless, the reality is that he has great help – Rom. 8:31; Psa. 27:5 • While the Christian may feel isolated, the reality is that God is always at his side – Psa. 23:4; Matt. 28:20; Heb. 13:5,6 Overcoming Anxiety • Trust In God… – The remedy for anxiety is complete trust and confidence in God's ability to deal with anything that threatens us – Jn. 14:1; Phil. 4:13; Deut. 31:7,8; Rom. 8:31 • The more we learn about God, the more we know His infinite power and His concern for us - 1 Pet. 5:6,7 • The avenue of prayer is open to the Christian to request God's help- 1 Jn. 5:14 • God has promised peace of mind to those who are willing to commit their anxieties to Him – Jn. 16:33; Phil. 4:6,7; 1 Pet. 4:19 Overcoming Anxiety • Trust In God… – This term appears on our coinage, but has lost its meaning – If we fully trust in God, we shall have peace. Acts 27:25; Isa. 26:3 Overcoming Anxiety • Read The Bible – Committing ourselves to God's safekeeping requires that we grow in our knowledge of God and love for Him – Thus, the most important thing we can do is study the Scriptures, pray, and meditate on God's promises to His faithful people – Rom. 15:4 Overcoming Anxiety • Be Realistic – Peace of mind does not depend on solving all the problems, righting all the wrongs, removing all the imperfections, or getting all we want - Eccl. 8:16-17 – Some things will not change and we need to be realistic enough to accept that • There are problems that have no solutions • There are situations that must simply be lived through • "The art of being wise is the art of knowing what to overlook" - William James • Pro. 19:11 Overcoming Anxiety • Be Realistic – Realistic knowledge of our own limitations ought to cause us to relax and slow down • Besides the noble art of getting things done is the noble art of leaving things undone • "The wisdom of life consists in the elimination of nonessentials" -- Gladstone – We must learn to let go of some problems and allow the Lord to be in charge of them – 1 Pet 5:7; Pro. 3:5,6 Overcoming Anxiety • Set Our Minds To Overcome Worry – Little girl explaining why she is happy today and not the other day: "Today I pushed my thoughts around, and the other day I let my thoughts push me around" – Abraham Lincoln: "I have been as happy as I have made up my mind to be." – 2 Cor. 10:5 - take every thought captive Overcoming Anxiety • Be Flexible – Change is inevitable; we have got to be resilient, adaptable, adjustable - Phil. 4:11-12 – Under stress, if we can't bend, we will surely break – Our faith must be in Him who changes not – There are some changes we ought to resist without compromise; wisdom can tell us when to change and when to hold our ground Overcoming Anxiety • Focus On The Good Cares, Minimize The Unnecessary Ones – In the Bible, cares can be either good or bad • Good - 1 Cor. 12:25; 2 Cor. 11:28; Phil. 2:20 • Bad – Matt. 13:22; Phil. 4:6; 1 Pet. 5:7 – We tend to become distracted by many relatively unimportant cares, and don't care enough about the things we ought to - Matt. 13:22 – When the mind is distracted by many pursuits, it derives but little benefit from any of them – Really only one thing is necessary – Luke 10:41,42; Matt. 6:33,34 Overcoming Anxiety • Learn To Live One Day At A Time – Proper use of today diminishes anxiety about tomorrow - Matt. 6:34 • Anxiety does not empty tomorrow of its worries and sorrows; it only empties today of its strengths • Worry is the interest paid on trouble before it falls due – Many, if not most, of our fears will turn out to be unfounded • Winston Churchill said on his deathbed that he had a lot of trouble in his life, most of which never happened • "In headaches and in worry vaguely life leaks away, and time will have his fancy tomorrow or today" -- W. H. Auden Overcoming Anxiety • Stay Busy – Anxiety and idleness often go hand-in-hand • Despair is a form of laziness • Blessed is the person who is too busy to worry in the daytime, and too sleepy to worry at night Overcoming Anxiety • Stay Busy – Much good can be accomplished, even in adverse circumstances, if we will quit concentrating on what cannot be done and do what CAN be done • "Don't waste time in doubts and fears; spend yourself in the work before you, well assured that the right performance of this hour's duties will be the best preparation for the hours or ages that follow it" -- Ralph Waldo Emerson • "Our great business in life is not to see what lies dimly at a distance, but to do what lies clearly at hand." -- Thomas Carlyle Overcoming Anxiety • Stay Busy – There is no tranquilizer as effective as the knowledge that we have done our best and there is no pillow as soft as a good conscience Overcoming Anxiety • Learn Contentment – A lesson Paul had learned – Phil. 4:11-13 • We need to be able to rejoice in the Lord, which we can do if we continually count our blessings – Phil. 4:4,6 • The Christian ought to be able to see the silver lining in the darkest cloud Overcoming Anxiety • Learn Contentment – The discontented Christian may lose his soul because of it - 1 Tim. 6:6-8; Heb. 13:5,6 • Anxiety often comes from having too much, rather than too little – Eccl. 5:12 • Our wealth depends not so much on what we have, as what we can do without – When a problem produces anxiety within us, the very best thing we can do than bathe the problem in two things: reverence and gratitude Conclusion • The Christian is given the means to deal with anxiety... – Peace that comes through prayer - Phil. 4:6-7 – Reassuring confidence from trusting in God – Psa. 23:1-6 Conclusion • Whenever the feelings of insecurity, helplessness, and isolation produce anxiety... – Trust in God – Read The Bible – Be Realistic – Set Our Minds To Overcome Worry – Be Flexible – Focus On The Good Cares, Minimize The Unnecessary Ones – Learn To Live One Day At A Time – Stay Busy – Learn Contentment Conclusion • If you haven't been baptized, you don't have that first step to overcome anxiety (Trust in God). To obtain that, you must: – Hear the word of the gospel - Rom. 10:17; Acts 18:8 – Believe the gospel - Acts 18:8; 1 Cor. 1:2 – Repent of your sins - Acts 2:38, 47 – Confess Christ - Acts 8:37; Rom. 10:10 – Be baptized - Acts 2:38; 1 Pet. 3:21 • If you have been but have sinned: – Repent - Acts 8:22 – Confess – Jas. 5:16 – Pray - Acts 8:22; Jas. 5:16
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Milem JF. 2001. Increasing diversity benefits: How campus climate and teaching methods affect students outcomes. In: Orfield G, Kurlaender M, eds. Diversity Challenged: Evidence on the Impact of Affirmative Action. Cambridge, MA: Harvard Education Publishing Group. Pp. 233–249.
Milem JF, Dey EL, White CB. This volume. Diversity considerations in health professions education. In Smedley BD, Stith-Butler A, Bristow LR, eds. In the Nation's Compelling Interest: Ensuring Diversity in the Health-Care Workforce. Washington, DC: The National Academies Press.
Monts LP. 1995. Diversity and multiculturalism: Institutional leadership at the University of Michigan. Journal of Dental Education 59(12):1113–1118.
Myers HF, Echemendia RJ, Trimble JE. 1991. The need for training ethnicity minority psychologists. In: Myers HF, Wohlford P, Guzman LP, Echemendia RJ, eds. Ethnic Minority Perspectives on Clinical Training and Services in Psychology Washington, DC: American Psychological Association. Pp. 3–11.
Rainey ML. 2001. How do we retain minority health professions students? In: Smedley BD, Stith AY, Colburn L, Evans CH, eds. The Right Thing to Do, The Smart Thing to Do: Enhancing Diversity in the Health Professions. Washington, DC: National Academy Press. Pp. 328–357.
Rosseter R. 2002. Reshaping recruiting strategies for increasing diversity in academic nursing programs. Association of Women's Health, Obstetric and Neonatal Nurses (AWHONN) 6(3):196–200.
Smith D. 2000. How to diversify the faculty. Academe 86(5):48–52.
Steinhardt R, Connell M. 2002. Reporting of wrongdoing and resolving disputes: The value of ombudsmen and hotlines in the corporation. In: Banks TL, Banks FZ, eds. Corporate Legal Compliance Handbook. New York: Aspen Publishers. Pp. 6-1–6-34.
Tedesco L. 2001. The role of diversity in the training of health professionals. In: Smedley BD, Stith AY, Colburn L, Evans CH, eds. The Right Thing to Do, The Smart Thing to Do: Enhancing Diversity in the Health Professions. Washington, DC: National Academy Press. Pp. 36–56.
University and College Ombuds Association (UCOA). 2003. The Role of a University or College Ombuds Office . [Online]. Available: http://www.ucoa.org/the_ombuds.html.
University of Michigan. 2000. The Compelling Need for Diversity in Higher Education. [Online]. Available: http://www.umich.edu/~urel/admissions/legal/expert/index.html [accessed April 10, 2000].
Whitla DK, Orfield G, Silen W, Teperow C, Howard C, Reede J. 2003. Educational benefits of diversity in medical school: A survey of students. Academic Medicine 78(5):460–466.


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PSC Students, Peru Kiwanis to Hold Pancake Feed to Benefit Nemaha County Relay for Life
(Peru, Neb.) The Peru State College (PSC) Bobcat Relay for Life Team will join the Peru Kiwanis Club in raising funds at their annual pancake feed benefit for the Nemaha County Relay for Life.
The pancake feed will be held from 7 – 11 a.m. on Saturday, March 27 at the Peru City Hall. There is no admission fee, but free will donations will be accepted to support the cause.
Peru Kiwanis President Dave Pease said, "This is just the type of cause we like to support. Cancer has affected most people's lives in one way or another. The pancake feed is a great opportunity for the college, the Peru community and Nemaha County to work together for a common cause. We look forward to having students work with our local Kiwanis to ensure everyone leaves 'full and happy' after a delicious meal of pancakes, sausage, eggs and coffee."


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All Out of Bubblegum
Posted On:3/12/2007 10:57pm
Style: FMA
sirc is boxing a style?
There's no choice but to confront you, to engage you, to erase you. I've gone to great lengths to expand my threshold of pain. I will use my mistakes against you. There's no other choice.
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Then about noon EDT, many well-populated servers were given the opportunity to move. Communities on PvP servers like The Swiftsure were asked to go to The Bastion. According to TORStatus.net, The Swiftsure's population out-ranked The Bastion's by several points. This was not the only case of the confusion in the population. Lord Adraas, arguably the largest roleplay community in the US, was asked to move to an equally populated server The Ebon Hawk.
Taking into account some of the comments on the official forums and on the roleplay fan site SWTOR-RP, many players are confused as to what BioWare's ultimate goal might be with these server transfers, and if the players on the origin servers don't take this opportunity to transfer now, will they have opportunity to do it again in the future? Because no communication has come from BioWare regarding fate of the origin servers, some like Vlayue on the official forum believe that the server transfers are meant to "even out server populations not just tip the entire server over and pour it into another." However, a large majority have voiced their opinions by transferring their characters and guilds to the new server because they see it as BioWare's way of killing off the origin server's population.
Unfortunately, because of the PR speak surrounding the situation, even BioWare appears to be uncertain of what's happening. On the blog addressing the transfers specifically, the team writes (emphasis ours): "This character transfer service will be available as long as is required to help maintain population balance across the service and create a better overall gameplay experience." However, a few weeks ago, Lead Designer Daniel Erickson suggested that the team was looking to make massive servers and not keep the current server landscape. "We are coming up on a huge move to servers with massively higher population caps than we have today," he told PC Gamer.
Which is it: balance across the servers or massive servers? Hopefully, BioWare will clear up this unanswered question soon so that people on origin servers are not holding on to false hope.
[We originally marked The Swiftsure as a PvE community; it is in fact a PvP server, and we have fixed the post to reflect that, with thanks to tipster Dengar.]


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Teacher receives 10 years deferred adjudication probation
CORPUS CHRISTI - A former Robstown track coach and science teacher set to face trial Monday on a dozen counts related to accusations he had sexual relationships with two students instead agreed to a plea deal with probation on one of the charges.
Jesse Hastey, 32, was indicted on five counts of sexual assault of a child and seven counts of improper relationship between an educator and a student. But before the trial's start on Monday morning, Hastey pleaded guilty to one of the counts of improper relationship between an educator and a student, a second-degree felony. As part of the plea deal, the prosecution agreed to drop the remaining 11 counts and recommended he be fined and placed on probation.
District Judge Tom Greenwell then sentenced Hastey to 10 years deferred adjudication probation, a $1,500 fine and 240 hours of community service.
Hastey resigned from Robstown High School in November 2006 after allegations surfaced that he had sex with a female student. According to an arrest affidavit, the 17-year-old student told school officials and police that she had consensual sex with Hastey at his home and in his classroom.
Consensual sex with anyone 17 or older is not illegal in Texas, because 17-year-olds are considered to be adults. But state law prohibits school employees from intentionally or knowingly engaging in sexual acts with students.
The counts of sexual assault of a child that were dismissed against Hastey stemmed from allegations he had sex with a 15-year-old student who was a member of the Robstown High School cross-country team he coached.
Prosecutor Sandra Eastwood said Hastey's two former students had not wanted to deal with testifying about the incidents in a public trial and wanted the case resolved.
Unlike standard probation, Hastey could be sentenced to as many as 20 years in prison, the maximum punishment for the second-degree felony, if he violates this type of probation, Eastwood added.
Hastey's attorney, John Gilmore said his client, who agreed to voluntarily surrender his teaching certificate, has no plans to return to the profession.
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Juanita Hughett
Juanita Hughett, age 87 of Seymour, passed away June 15, 2014. She was a member of Trinity Baptist Church.
Mrs. Hughett was preceded in death by her husbands JF Hughett and Edgar Jones, daughter Ann Massey, sons Johnny and Roger Hughett, grandson Billy Foster, granddaughter Rebecca Barnes, and several sisters and brothers.
Survivors: Daughter: Stella Foster and husband Bill; Sons: Ronnie Hughett and wife Jean, Kenneth Hughett and wife Carolyn; Grandchildren: Kenny, Linda, Mary, Jackie, Lisa, Debbie, Michael, Aric, Marc, and Penny; Several great-grandchildren and great-great-grandchildren; Sister: Norma Crowley; Brothers: Frank and JD McGill; Daughter-in-law: Margaret Hughett; Stepdaughter: Sandy Hamilton and Husband Charles; Stepson: Randy Jones. Special thanks to the nurses and staff at Pigeon Forge Care and Rehab and UT Hospice.
Funeral service 7PM Wednesday in Atchley's Seymour Chapel with Rev. Jerry Little and Rev. Ronnie Beeler officiating. Interment 10 AM Thursday in Boyd's Creek Cemetery. The family will receive friends 5-7 PM Wednesday. Arrangements by Atchley Funeral Home, 122 Peacock Court, Seymour, Tn. 37865 (865)577-2807.