text:
Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.
1. A method of fabricating a MEMS device, comprising:
providing a substrate;
depositing an electrode layer over the substrate;
depositing a sacrificial layer over the electrode layer;
patterning the sacrificial layer to form apertures;
forming support structures at least partially within apertures in the sacrificial layer, wherein forming the support structure comprises depositing a layer of conformal support post material over the sacrificial layer and apertures, the support post having an internal residual stress; and
depositing a movable layer over the support structures after forming the support structures, wherein the movable layer comprises a material having an internal residual stress, and wherein the materials of the movable layer and the support structures are selected such that the residual stress in the movable layer is balanced by residual stress in the support structures such that deflection of the movable layer caused by the residual stresses is minimized.
2. The method of
3. The method of
4. The method of
5. The method of
6. The method of
7. The method of
forming a reflective sublayer; and
forming a mechanical sublayer over the reflective layer, wherein the reflective sublayer comprises a different material than the mechanical sublayer.
8. The method of
forming a first sublayer, wherein the first sublayer comprises the same material as the mechanical sublayer; and
forming a second sublayer, wherein the second sublayer comprises the same material as the reflective sublayer.
9. The method of
10. The method of
11. The method of
12. The method of
13. The method of
14. The method of
15. A MEMS device fabricated by the method of
16. A MEMS device, comprising:
a substrate;
an electrode layer located over the substrate;
a movable layer located over the electrode layer, wherein the movable layer is generally spaced apart from the electrode layer by an air gap, wherein the movable layer comprises a reflective sublayer and a mechanical sublayer, the reflective sublayer on the side of the movable layer facing the electrode layer, and wherein the reflective sublayer comprises a different material than the mechanical sublayer; and
rigid support structures formed vertically adjacent the movable layer such that the support structures and the movable layer overlap one another within a support post region, wherein the support structures comprise a first sublayer comprising the same material as the mechanical sublayer and a second sublayer comprising the same material as the reflective sublayer, the first and second sublayers formed of different materials.
17. The MEMS device of
18. The MEMS device of
19. The MEMS device of
20. The MEMS device of
21. The MEMS device of
22. The method of
23. The MEMS device of
24. The MEMS device of
25. The MEMS device of
26. The MEMS device of
27. The MEMS device of
a processor that is configured to communicate with at least one of said electrode layer and said movable layer, said processor being configured to process image data; and
a memory device that is configured to communicate with said processor.
28. The MEMS device of
29. The MEMS device of
30. The MEMS device of
31. The MEMS device of
32. The MEMS device of
33. The device of
34. The device of
35. An electromechanical device, comprising:
a substrate;
an electrode layer located over the substrate;
a plurality of rigid support structures each comprising a first sublayer of a first material and a second sublayer of a second material, the first and second materials being different from one another; and
a movable layer extending over at least a portion of the rigid support structures, wherein the movable layer is generally spaced apart from the electrode layer by an air gap, wherein the movable layer comprises a reflective sublayer and a mechanical sublayer, the reflective sublayer on the side of the movable layer facing the electrode layer, wherein the reflective sublayer comprises the first material and the mechanical sublayer comprises the second material.
36. The electromechanical device of
37. The electromechanical device of
38. The electromechanical device of
39. The electromechanical device of
40. The method of
This application claims priority under 35 U.S.C. §119(e) to U.S. Provisional Application Ser. No. 60/710,019, filed Aug. 19, 2005, which is hereby incorporated by reference in its entirety.
Microelectromechanical systems (MEMS) include micro mechanical elements, actuators, and electronics. Micromechanical elements may be created using deposition, etching, and/or other micromachining processes that etch away parts of substrates and/or deposited material layers or that add layers to form electrical and electromechanical devices. One type of MEMS device is called an interferometric modulator. As used herein, the term interferometric modulator or interferometric light modulator refers to a device that selectively absorbs and/or reflects light using the principles of optical interference. In certain embodiments, an interferometric modulator may comprise a pair of conductive plates, one or both of which may be transparent and/or reflective in whole or part and capable of relative motion upon application of an appropriate electrical signal. In a particular embodiment, one plate may comprise a stationary layer deposited on a substrate and the other plate may comprise a metallic membrane separated from the stationary layer by an air gap. As described herein in more detail, the position of one plate in relation to another can change the optical interference of light incident on the interferometric modulator. Such devices have a wide range of applications, and it would be beneficial in the art to utilize and/or modify the characteristics of these types of devices so that their features can be exploited in improving existing products and creating new products that have not yet been developed.
In one embodiment, a method of fabricating a MEMS device is provided, the method including providing a substrate, depositing an electrode layer over the substrate, depositing a sacrificial layer over the electrode layer, patterning the sacrificial layer to form apertures, depositing a movable layer over the sacrificial layer, forming support structures adjacent the movable layer and at least partially within apertures in the sacrificial layer, where the support structures include a material selected to minimize the tendency of the support structures to laterally deform relative to the movable layer.
In another embodiment, a MEMS device is provided, including a substrate, an electrode layer located over the substrate, a movable layer located over the electrode layer, where the movable layer is generally spaced apart from the electrode layer by an air gap, and rigid support structures formed adjacent the movable layer and at least partially within the depressions in the movable layer, where the rigid support structures comprise a material selected to minimize the tendency of the support structures to laterally deform relative to the movable layer.
In another embodiment, a method of fabricating a MEMS device is provided, the method including providing a substrate, depositing an electrode layer over the substrate, depositing a sacrificial layer over the electrode layer, patterning the sacrificial layer to form apertures, forming underlying support structures at least partially within the apertures, forming a movable layer over the underlying support structures, forming overlying support structures overlying the movable layer and at least partially within apertures in the sacrificial layer, wherein the support structures are configured to minimize deflection resulting from a tendency of the overlying support structure to laterally expand or contract with respect to the underlying support structure.
In another embodiment, a MEMS device is provided, including a substrate, an electrode layer located over the substrate, a movable layer located over the electrode layer, where the movable layer is generally spaced apart from the electrode layer by an air gap, underlying support structures formed under the movable layer, and overlying support structures formed over the movable layer, where at least some of the overlying support structures overly underlying support structures beneath the movable layer, and where said support structures are configured to minimize deflection resulting from a tendency of the overlying support structure to laterally expand or contract with respect to the underlying support structure.
In another embodiment, a MEMS device is provided, including first means for electrically conducting, second means for electrically conducting, and means for supporting the second conducting means over the first conducting means, where the second conducting means is movable relative to the first conducting means in response to generating electrostatic potential between the first and second conducting means, and where the supporting means are configured to minimize deflection resulting from a tendency of components within a support region to laterally expand or contract with respect to one another.
The following detailed description is directed to certain specific embodiments of the invention. However, the invention can be embodied in a multitude of different ways. In this description, reference is made to the drawings wherein like parts are designated with like numerals throughout. As will be apparent from the following description, the embodiments may be implemented in any device that is configured to display an image, whether in motion (e.g., video) or stationary (e.g., still image), and whether textual or pictorial. More particularly, it is contemplated that the embodiments may be implemented in or associated with a variety of electronic devices such as, but not limited to, mobile telephones, wireless devices, personal data assistants (PDAs), hand-held or portable computers, GPS receivers/navigators, cameras, MP3 players, camcorders, game consoles, wrist watches, clocks, calculators, television monitors, flat panel displays, computer monitors, auto displays (e.g., odometer display, etc.), cockpit controls and/or displays, display of camera views (e.g., display of a rear view camera in a vehicle), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., display of images on a piece of jewelry). MEMS devices of similar structure to those described herein can also be used in non-display applications such as in electronic switching devices.
Individual MEMS elements, such as interferometric modulator elements, may be provided with support structures both within and at the edges of individual elements. In certain embodiments, these support structures may include "rivet" structures overlying a movable layer and/or "post" structures underlying the movable layer. Due to variations in both the residual stresses of the layers as deposited and stresses which result due to variations in operating conditions (e.g., internal strain or stresses caused by differences in the coefficients of thermal expansion), the movable layer may undesirably deflect, altering the operation of the MEMS device. Such undesirable stresses can be minimized or eliminated through material selection and symmetrical arrangement of support structures, such as support structures having the same material and thickness as either the movable layer or an underlying support structure. In further embodiments, stress mismatch between two layers within a MEMS device can be minimized when the layers are mirror images of one another.
One interferometric modulator display embodiment comprising an interferometric MEMS display element is illustrated in
The depicted portion of the pixel array in
The optical stacks 16 a and 16 b (collectively referred to as optical stack 16), as referenced herein, typically comprise several fused layers, which can include an electrode layer, such as indium tin oxide (ITO), a partially reflective layer, such as chromium, and a transparent dielectric. The optical stack 16 is thus electrically conductive, partially transparent, and partially reflective, and may be fabricated, for example, by depositing one or more of the above layers onto a transparent substrate 20. The partially reflective layer can be formed from a variety of materials that are partially reflective such as various metals, semiconductors, and dielectrics. The partially reflective layer can be formed of one or more layers of materials, and each of the layers can be formed of a single material or a combination of materials.
In some embodiments, the layers of the optical stack 16 are patterned into parallel strips, and may form row electrodes in a display device as described further below. The movable reflective layers 14 a, 14 b may be formed as a series of parallel strips of a deposited metal layer or layers (orthogonal to the row electrodes of 16 a, 16 b) deposited on top of posts 18 and an intervening sacrificial material deposited between the posts 18. When the sacrificial material is etched away, the movable reflective layers 14 a, 14 b are separated from the optical stacks 16 a, 16 b by a defined gap 19. A highly conductive and reflective material such as aluminum may be used for the reflective layers 14, and these strips may form column electrodes in a display device.
With no applied voltage, the cavity 19 remains between the movable reflective layer 14 a and optical stack 16 a, with the movable reflective layer 14 a in a mechanically relaxed state, as illustrated by the pixel 12 a in
In one embodiment, the processor 21 is also configured to communicate with an array driver 22. In one embodiment, the array driver 22 includes a row driver circuit 24 and a column driver circuit 26 that provide signals to a display array or panel 30. The cross section of the array illustrated in
In typical applications, a display frame may be created by asserting the set of column electrodes in accordance with the desired set of actuated pixels in the first row. A row pulse is then applied to the row 1 electrode, actuating the pixels corresponding to the asserted column lines. The asserted set of column electrodes is then changed to correspond to the desired set of actuated pixels in the second row. A pulse is then applied to the row 2 electrode, actuating the appropriate pixels in row 2 in accordance with the asserted column electrodes. The row 1 pixels are unaffected by the row 2 pulse, and remain in the state they were set to during the row 1 pulse. This may be repeated for the entire series of rows in a sequential fashion to produce the frame. Generally, the frames are refreshed and/or updated with new display data by continually repeating this process at some desired number of frames per second. A wide variety of protocols for driving row and column electrodes of pixel arrays to produce display frames are also well known and may be used in conjunction with the present invention.
In the
The display device 40 includes a housing 41, a display 30, an antenna 43, a speaker 45, an input device 48, and a microphone 46. The housing 41 is generally formed from any of a variety of manufacturing processes as are well known to those of skill in the art, including injection molding and vacuum forming. In addition, the housing 41 may be made from any of a variety of materials, including, but not limited to, plastic, metal, glass, rubber, and ceramic, or a combination thereof. In one embodiment, the housing 41 includes removable portions (not shown) that may be interchanged with other removable portions of different color, or containing different logos, pictures, or symbols.
The display 30 of the exemplary display device 40 may be any of a variety of displays, including a bi-stable display, as described herein. In other embodiments, the display 30 includes a flat-panel display, such as plasma, EL, OLED, STN LCD, or TFT LCD as described above, or a non-flat-panel display, such as a CRT or other tube device, as is well known to those of skill in the art. However, for purposes of describing the present embodiment, the display 30 includes an interferometric modulator display, as described herein.
The components of one embodiment of the exemplary display device 40 are schematically illustrated in
The network interface 27 includes the antenna 43 and the transceiver 47 so that the exemplary display device 40 can communicate with one or more devices over a network. In one embodiment, the network interface 27 may also have some processing capabilities to relieve requirements of the processor 21. The antenna 43 is any antenna known to those of skill in the art for transmitting and receiving signals. In one embodiment, the antenna transmits and receives RF signals according to the IEEE 802.11 standard, including IEEE 802.11(a), (b), or (g). In another embodiment, the antenna transmits and receives RF signals according to the BLUETOOTH standard. In the case of a cellular telephone, the antenna is designed to receive CDMA, GSM, AMPS, or other known signals that are used to communicate within a wireless cell phone network. The transceiver 47 pre-processes the signals received from the antenna 43 so that they may be received by and further manipulated by the processor 21. The transceiver 47 also processes signals received from the processor 21 so that they may be transmitted from the exemplary display device 40 via the antenna 43.
In an alternative embodiment, the transceiver 47 can be replaced by a receiver. In yet another alternative embodiment, the network interface 27 can be replaced by an image source, which can store or generate image data to be sent to the processor 21. For example, the image source can be memory device such as a digital video disc (DVD) or a hard-disc drive that contains image data, or a software module that generates image data.
The processor 21 generally controls the overall operation of the exemplary display device 40. The processor 21 receives data, such as compressed image data from the network interface 27 or an image source, and processes the data into raw image data or into a format that is readily processed into raw image data. The processor 21 then sends the processed data to the driver controller 29 or to the frame buffer 28 for storage. Raw data typically refers to the information that identifies the image characteristics at each location within an image. For example, such image characteristics can include color, saturation, and gray-scale level.
In one embodiment, the processor 21 includes a microcontroller, CPU, or logic unit to control operation of the exemplary display device 40. The conditioning hardware 52 generally includes amplifiers and filters for transmitting signals to the speaker 45, and for receiving signals from the microphone 46. The conditioning hardware 52 may be discrete components within the exemplary display device 40, or may be incorporated within the processor 21 or other components.
The driver controller 29 takes the raw image data generated by the processor 21 either directly from the processor 21 or from the frame buffer 28 and reformats the raw image data appropriately for high speed transmission to the array driver 22. Specifically, the driver controller 29 reformats the raw image data into a data flow having a raster-like format, such that it has a time order suitable for scanning across the display array 30. Then the driver controller 29 sends the formatted information to the array driver 22. Although a driver controller 29, such as a LCD controller, is often associated with the system processor 21 as a stand-alone Integrated Circuit (IC), such controllers may be implemented in many ways. They may be embedded in the processor 21 as hardware, embedded in the processor 21 as software, or fully integrated in hardware with the array driver 22.
Typically, the array driver 22 receives the formatted information from the driver controller 29 and reformats the video data into a parallel set of waveforms that are applied many times per second to the hundreds and sometimes thousands of leads coming from the display's x-y matrix of pixels.
In one embodiment, the driver controller 29, the array driver 22, and the display array 30 are appropriate for any of the types of displays described herein. For example, in one embodiment, the driver controller 29 is a conventional display controller or a bi-stable display controller (e.g., an interferometric modulator controller). In another embodiment, the array driver 22 is a conventional driver or a bi-stable display driver (e.g., an interferometric modulator display). In one embodiment, a driver controller 29 is integrated with the array driver 22. Such an embodiment is common in highly integrated systems such as cellular phones, watches, and other small area displays. In yet another embodiment, the display array 30 is a typical display array or a bi-stable display array (e.g., a display including an array of interferometric modulators).
The input device 48 allows a user to control the operation of the exemplary display device 40. In one embodiment, the input device 48 includes a keypad, such as a QWERTY keyboard or a telephone keypad, a button, a switch, a touch-sensitive screen, or a pressure- or heat-sensitive membrane. In one embodiment, the microphone 46 is an input device for the exemplary display device 40. When the microphone 46 is used to input data to the device, voice commands may be provided by a user for controlling operations of the exemplary display device 40.
The power supply 50 can include a variety of energy storage devices as are well known in the art. For example, in one embodiment, the power supply 50 is a rechargeable battery, such as a nickel-cadmium battery or a lithium ion battery. In another embodiment, the power supply 50 is a renewable energy source, a capacitor, or a solar cell including a plastic solar cell, and solar-cell paint. In another embodiment, the power supply 50 is configured to receive power from a wall outlet.
In some embodiments, control programmability resides, as described above, in a driver controller which can be located in several places in the electronic display system. In some embodiments, control programmability resides in the array driver 22. Those of skill in the art will recognize that the above-described optimizations may be implemented in any number of hardware and/or software components and in various configurations.
The details of the structure of interferometric modulators that operate in accordance with the principles set forth above may vary widely. For example,
In embodiments such as those shown in
In certain embodiments, it may be desirable to provide additional support to a movable layer such as the movable reflective layer 14 illustrated in
An exemplary layout of such support structures is shown in
Advantageously, these support structures 62 are made small relative to the surrounding area of the modulator element 60. As the support posts constrain deflection of the movable layer 66 and may generally be opaque, the area underneath and immediately surrounding the support structures 62 is not usable as active area in a display, as the movable layer in those areas is not movable to a fully actuated position (e.g., one in which a portion of the lower surface of the movable layer 14 of
In certain embodiments, these support structures may comprise a depression in the movable layer, along with a substantially rigid structure(s) above and/or below the movable layer which helps to maintain the shape. While such support structures may be formed of a polymer material, an inorganic material having greater rigidity is preferably used, and provides advantages over similar structures comprising polymeric materials.
For instance, a polymeric support structure may not maintain a desired level of rigidity over a wide range of operating temperatures, and may be subject to gradual deformation or mechanical failure over the lifetime of a device. As such failures may affect the distance between the movable layer and the optical stack, and this distance at least partially determines the wavelengths reflected by the interferometric modulator element, such failures may lead to a shift in the reflected color due to wear over time or variance in operating temperatures. Other MEMS devices experience analogous degradation over time when supports are formed of polymeric material.
One process for forming an interferometric modulator element comprising overlying rivet support structures is described with respect to
The conductive layer 72 and partially reflective layer 74 are then patterned and etched to form bottom electrodes, also referred to as row electrodes, which run cross-wise (e.g., perpendicular) to the movable layer 66 of
The conductive layer 72 and partially reflective layer 74 may be patterned via photolithography and etched via, for example, commercially available wet etches. Chromium wet etches include solutions of acetic acid (C2H4O2) and cerium ammonium nitrate [Ce(NH4)2(NO3)6]. ITO wet etches include HCl, a mixture of HCl and HNO3, or a mixture of FeCl3HCl/DI in a 75%/3%/22% ratio and H2O. Once the apertures 76 have been formed, a dielectric layer 78 is deposited over the conductive and partially reflective layers 72 and 74, as seen in
A variety of methods can be used to perform the patterning and etching processes discussed with respect to the various embodiments disclosed herein. The etches used may be either a dry etch or a wet etch, and may be isotropic or anisotropic. Suitable dry etches include, but are not limited to: SF6/O2, CHF3/O2, SF2/O2, CF4/O2, and NF3/O2. Generally, these etches are suitable for etching one or more of SiOx, SiNx, SiOxNy, spin-on glass, Nissan™ hard coat, and TaOx, but other materials may also be etched by this process. Materials which are resistant to one or more of these etches, and may thus be used as etch barrier layers, include but are not limited to Al, Cr, Ni, and Al2O3. In addition, wet etches including but not limited to PAD etches, BHF, KOH, and phosphoric acid may be utilized in the processes described herein, and may generally be used to etch metallic materials. Generally, these etches may be isotropic, but can be made anisotropic through the use of a reactive ion etch (RIE), by ionizing the etch chemicals and shooting the ions at the substrate. The patterning may comprise the deposition of a photoresist (PR) layer (either positive or negative photoresist), which is then used to form a mask. Alternately, a hard mask can be utilized. In some embodiments, the hard mask may comprise metal or SiNx, but it will be understood that the composition of the hard mask may depend on the underlying materials to be etched and the selectivity of the etch to be used. The hard mask is typically patterned using a PR layer, which is then removed, and the hard mask is used as a mask to etch an underlying layer. The use of a hard mask may be particularly advantageous when a wet etch is being used, or whenever processing through a mask under conditions that a PR mask cannot handle (such as at high temperatures, or when using an oxygen-based etch). Alternate methods of removing layers may also be utilized, such as an ashing etch or lift-off processes.
The thickness and positioning of the layers forming the optical stack 16 determines the color reflected by the interferometric modulator element when the element is actuated (collapsed), bringing the movable layer 66 into contact with the optical stack. In certain embodiments, the optical stack is configured such that the interferometric modulator element reflects substantially no visible light (appears black) when the movable layer is in an actuated position. Typically, the thickness of the dielectric layer 78 is about 450 Å, although it will be understood that the desired thickness will vary based on both the refractive index of the material and the desired color reflected by the interferometric modulator in a collapsed state. While illustrated for simplicity as planar (which can be achieved if the dielectric layer 78 is a spin-on glass), the dielectric layer 78 is typically conformal over the patterned lower electrode formed from layers 72 and 74.
As seen in
In an embodiment in which the sacrificial layer is to be etched by a XeF2 etch, both the reflective layer 90 and the mechanical layer 92 are preferably resistant to XeF2 etching. If either of these layers is not resistant, an etch stop layer may be used to protect the non-resistant layer. It can also be seen that the taper of the tapered apertures 86 facilitates the conformal deposition of the reflective layer 90 and mechanical layer 92. Absent this taper, it may be difficult to deposit these layers such that the layers have substantially even thicknesses over surfaces outside and within the apertures 86.
In an alternate embodiment, the movable layer 66 may comprise a single layer which is both highly reflective and has the desired mechanical characteristics. However, the deposition of two distinct layers permits the selection of a highly reflective material, which might otherwise be unsuitable if used as the sole material in a movable layer 66, and similarly allows selection of a suitable mechanical layer without regard to its reflective properties. In yet further embodiments, the movable layer may comprise a reflective sublayer which is largely detached from the mechanical layer, such that the reflective layer may be translated vertically without bending (See, e.g.,
In other embodiments in which the MEMS devices being formed comprise non-optical MEMS devices (e.g., a MEMS switch), it will be understood that the movable layer 66 need not comprise a reflective material. For instance, in embodiments in which MEMS devices such as MEMS switches are being formed comprising the support structures discussed herein, the underside of the movable layer 66 need not be reflective, and may advantageously comprise a single layer, selected solely on the basis of its mechanical properties or other desirable properties.
As discussed with respect to the mechanical and reflective layers, it may be desirable to select for the rivet layer 96 a material that is resistant to XeF2 etching, which may be used to etch the sacrificial layer in certain embodiments. In addition, the rivet layer 96 is preferably selectively etchable with respect to the upper surface of underlying movable layer 66, which in the illustrated embodiment is mechanical layer 92, so as to permit etching of the rivet layer 96 while leaving the movable layer 66 unaffected. However, if the rivet layer 96 is not selectively etchable relative to the movable layer 66, an etch stop layer (not shown) may be provided between the rivet layer 96 and the movable layer 66.
Referring still to
Next, in
Finally, in
In another embodiment, the support structures may take the form of posts, and preferably inorganic posts, underlying the movable layer. An exemplary process for fabricating an interferometric modulator comprising inorganic support posts includes the steps of
In one embodiment, the inorganic post layer 84 and resultant post 88 comprise diamond-like carbon (DLC). In addition to being extremely hard and stiff (roughly 10× harder than SiO2), the DLC inorganic post layer 84 can be etched with an O2 dry etch. Advantageously, an O2 dry etch is highly selective relative to a wide variety of sacrificial materials, including but not limited to Mo and a-Si sacrificial material, as well as other sacrificial materials discussed above. An inorganic post comprising DLC thus provides a very stiff post, lessening the likelihood and amount of downward flexure of the edges of the support post 88 when overlying moving or mechanical layers are pulled downward during MEMS operation, while permitting the use of an etch which is relatively benign to a wide variety of materials.
Undesired flexure of the support structures and the mechanical layer may occur as a result of a tendency for the layers within the post structure to expand or contract relative to the other layers in a lateral direction along the length of the layers, particularly the layers within the support structures and the movable layer. In some situations, these tendencies are the result of inherent stresses within the materials forming the support structures and the movable layer, which are a function of the materials forming those layers and the manner of deposition. An additional source of such tendency for relative deformation is the differential thermal expansion of the layers, which is a function of the mismatch between the coefficients of thermal expansion of two different materials; the operating temperature of the MEMS device; the moduli of elasticity of the materials; and the material deposition conditions. When adjoining or otherwise integrated layers have different coefficients of thermal expansion, deflection may not only be caused by the relative change in size of integrated layers, but the total deflection may vary as the result of the operating temperature. Because such deflection will alter the height of the interferometric cavity, and therefore affect the color reflected by the interferometric modulator element, it is desirable to eliminate or minimize such deflection to the extent possible. Similar problems can arise for non-optical MEMS. It will be understood that the term "tendency to expand or contract" and similar terms is used herein to refer to both tendencies for relative deformation which are brought about as a result of unbalanced residual stresses in the affected area (such as the support post region), and stresses that result due to, for example, deformation brought about as a result of differing coefficients of thermal expansion in integrated or adjoining layers.
In one embodiment, the materials and thicknesses of the support structures are selected such that the tendency of certain layers in the region of the support structures to laterally expand or contract with respect to one another is minimized, so that deflection of the edges of the support structure is minimized or eliminated. In a particular embodiment, depicted in
Because the sublayer 110 should be selectively etched relative to the mechanical layer 92 in order to form the rivet structure 62, but is formed from the same material as the mechanical layer 124, an etch stop layer 114 may be deposited between the sublayer 110 and the mechanical layer 92, as illustrated. While residual stresses within the etch stop layer 114 will not be balanced by stresses within any other layer, the symmetry of this embodiment results in the etch stop layer 114 being located along or very close to the neutral axis of the structure. Thus, any stresses within the etch stop layer 114, or any stresses due to the thermal expansion of the layer 114 relative to the other layers, will not exert significant moments on the structure, and will not result in significant deflection either upwards or downwards. In certain embodiments, the etch stop layer 114 may comprise materials deposited by either chemical vapor deposition or plasma-enhanced chemical vapor deposition including, but not limited to, SiO2, TEOS, carbon-doped oxides, or SiNx. Silicon oxide-based materials serve as suitable etch stop layers when the rivet and mechanical layers comprise Ni, Cr, or NiCr alloys. These etch stop layers may have thicknesses of between 200 and 2000 Angstroms, but may also be thicker or thinner. Other etch barrier layers may also be used. One etch suitable for etching certain rivet layers (e.g., Ni, Cr or NiCr alloys) relative to the etch stop layer (e.g., a form of silicon oxide or silicon nitride) is a nitric acid (HNO3) etch. Etches suitable for removal of such etch barrier layers selectively relative to the rivet/mechanical layers include, but are not limited to, fluorine-based (e.g., reactive ion etch) etches or buffered oxide etch (BOE) wet etches.
Multiple variations on the above structure are possible. It is possible to select a material or materials for use in the rivet structure 62 which are not identical to the materials in the movable layer 66, but which will contain a net residual stress which is similar or identical to that in the movable layer 66, providing the desired effect. Advantageously, some of these materials may be selectively etchable relative to the mechanical layer 92, obviating the etch barrier layer 114. Similarly, materials may be selected which will eliminate or minimize deflection of the total structure as a result of the differing thermal expansion of the component layers.
In a further embodiment, the above structures may be modified to eliminate or minimize deflection of the support structures, particularly at the edges, in embodiments in which rivet structures 62 overlie inorganic posts 88. In one particular embodiment, shown in
In a further embodiment, the movable layer 66 may itself be made symmetric, as shown in
In another embodiment, shown in
In another embodiment, the structures discussed above may be applied to post structures, rather than rivet structures. This,
It will be understood that the above structures may be modified to minimize the tendencies for relative deformation in the support structure region in MEMS element having a substantially separated mechanical and reflective layer, such as the interferometric modulators depicted in and described with respect to
It will be understood that various combinations of the above embodiments are possible. Various other combinations of the support structures discussed above are contemplated and are within the scope of the invention. In addition, it will be understood that support structures formed by any of the methods above may be utilized in combination with other methods of forming support structures, in order to improve the rigidity and durability of those support structures, or to minimize the tendency of layers within the support structure area to laterally deform with respect to one another.
It will also be recognized that the order of layers and the materials forming those layers in the above embodiments are merely exemplary. Moreover, in some embodiments, other layers, not shown, may be deposited and processed to form portions of an MEMS device or to form other structures on the substrate. In other embodiments, these layers may be formed using alternative deposition, patterning, and etching materials and processes, may be deposited in a different order, or composed of different materials, as would be known to one of skill in the art.
It is also to be recognized that, depending on the embodiment, the acts or events of any methods described herein can be performed in other sequences, may be added, merged, or left out altogether (e.g., not all acts or events are necessary for the practice of the methods), unless the text specifically and clearly states otherwise.
While the above detailed description has shown, described, and pointed out novel features of the invention as applied to various embodiments, it will be understood that various omissions, substitutions, and changes in the form and details of the device of process illustrated may be made by those skilled in the art without departing from the spirit of the invention. As will be recognized, the present invention may be embodied within a form that does not provide all of the features and benefits set forth herein, as some features may be used or practiced separately from others.
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73% of Charlotte reviewers said Lifestyle Lift was worth it
I had a gastric bypass over 12 years ago and had excess skin and because of it I felt old. I keep to my diet and exercise and felt I should look as good as I felt. I have lost over 260 pounds and have started the process of making my self over inside and out. The staff and Dr. Gus A. Diaz made it a great expriance and I would do it again if they did it . I was 309 pounds now 130 pounds. more
"Sagging Jowls -Huntersville, NC"
Experience with the entire process very positive. The personnel were great; outcome was wonderful. Dr. Guba answered all questions, very informative, and told me what to expect. The results were extremely pleasing. Positive comments from friends and family. Friends say I look years younger but they do not know why!! more
"Thank You Dr. Diaz! - Charlotte, NC"
I chose Dr. Diaz to do my surgery, which was a brow lift, Life Style Lift and laser treatment around my mouth and chin. Initially, I was having just the Life Style Lift and upper eyelids and the laser. When Dr. Diaz saw me he asked if I had a lot of headaches. The answer was "yes". He felt the eyelids could wait but a brow lift was in my best interest. Trying to get more light into my line of... more
"Absolutely Delighted with Results! -..."
I was embarrassed about my "turkey neck" and sags. I saw the ads and looked very closely at others who had had the procedure. My husband and I decided that it probably be worth the cost. We are so glad we did, we love it. Monday morning I woke with with my neck swollen and sore. I immediately blamed it on the procedure. I called Dr. Diaz during his (Christmas holiday), and he... more
"Fifty and Fabulous! - Huntersville, NC"
This procedure was my 50th birthday present to myself. I had the unfortunate turkey wattle neck issue going on, and it's now completely gone, and my jawline and neck are also nicely tightened up. I am beyond thrilled with the results! The doctor and the entire staff were professional, caring and friendly. I had MANY questions before and after the procedure, and all were answered... more
"Miracle Worker! - Huntersville, NC"
Five years ago I went to a doctor that claimed he did a face lift on me only to find out he only pulled the skin and didn't touch any of the facial muscles. This lower face lift was to include my neck and underneath my chin a huge incision was made which got infected and scarred horribly. I was very self conscience about it as people would continually ask me what had happened. To make... more
"I Love the New Me - Charlotte, NC"
Of course, I was nervous before the procedure but the staff and the doctor put me at ease and the medication I received before the surgery made me sleep. I only remember the beginning of the procedure, after that it seemed I would go in and out of a dream and then they woke me up and said it was over. That is exactly what I wanted to happen as I didn't want to be awake for any of it. more
Best staff ive ever seen. had lifestyle lift in huntersville nc. had the best outcome. i would do this again in a minute i tell all my freinds and even strangers people ask what have you done you look 20 years younger and much happier. love my docyor hes a the best if anyones thinking of getting a lifestyle lift go to my doctor hes great if your thinking of geting this ... more
"I Love my Results from the Lifestyle..."
I was very unhappy when I looked in the mirror each day so I decided to do this for myself. My husband actually said I was beautiful. I love the results. The turkey neck is now smooth and the jowls are gone. Of course there was a few weeks for recovery however I could wear my makeup in a week after the stitches were removed. The doctor and staff made me feel good with all the attention and... more
"Supposedly "Weekend Procedure"..."
I went into Lifestyle Lift to simply lose the jowls that are hereditary in my family. At 45 I was a fairly attractive woman but looked like I was frowning all the time.Well let me warn all of you that the MD did more than a "simple weekend lift". I was told I would only have a small incision into my ear and at my hair line but they felt I needed lipo of my neck also so just a tiny... more
"Embarrassed and Disappointed - I..."
I fell for television commercials, magazine ads, the one hour procedure, immediate improvement and the pre-procedure red carpet treatment.I cannot see any noticeable improvement in my face. Several months after the procedure, I had a neck revision and six months following that procedure, I am stuck with what the physician describes as swelling that will eventualy go away. I believe at this... more
I went for my initial consult and was greeted by a most warm and friendly receptionist. I believe her name was Penny. That was the only positive thing I can say about my experience. The consultant lied to me sold me things that when I met with the doctor he said I didn't need. Who are these consultants are they medically trained or just salespeople dressed up to look like professionals?... more

subset: commoncrawl


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6. We'd like to think that this goes for every day, but Friday is officially Don't Step on a Bee Day, and Buzz Bakery is celebrating. The Alexandria bakery/cafe is selling cheap bee-themed cupcakes and giving away free miniature cupcakes for children. Apparently the day is meant to discourage people from walking around barefoot during the summer, but maybe you should just be more careful.
7. Break-dance crews from all over the world will congregate at St. Stephen's Church Friday night at around 6. And when break-dance crews meet, they inevitably spin on their heads in flashy displays of one-upmanship. Which sounds like fun to watch, especially for free.
8. More free sweets this weekend! Various bakeries around town will be giving out samples of Divine Chocolate on Saturday, a fair-trade brand made with cocoa beans from Ghana. For a list of stores participating, look here.
9. The Hip Hop Theater Festival is coming to a close, but catch one last performance of Don't Hit Mama at 7 on Saturday. It's a performance incorporating hip-hop and traditional African dances. Afterward, party with DJ RBI at Warehouse. Not Biggie? No money? No problems—the performance is free.
10. Couldn't get enough exploding gunpowder last weekend? Alexandria's got your pyro fix this Saturday. Celebrate the one-week anniversary of July 4 and the 260th anniversary of Alexandria with the Alexandria Symphony Orchestra, a cannon, and fireworks at Oronoco Bay Park. Fireworks start at 9:30 PM, but the music concert starts an hour earlier.
More>> After Hours Blog | Arts & Events | Happy Hour Finder | Calendar of Events


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The Department of Defense announced today the death of two soldiers supporting Operation Iraqi Freedom. They died Nov. 28 in Ar Ramadi, Iraq, when their unit was conducting a dismounted patrol and they encountered enemy forces using small arms fire. Both were assigned to the 1st Battalion, 503rd Infantry Regiment, 2nd Brigade Combat Team, 2nd Infantry Division, Camp Howze, Korea.
Killed were:
Staff Sgt. Michael B. Shackelford, 25, of Grand Junction, Colo.
Sgt. Carl W. Lee, 23, of Oklahoma City, Okla.


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Quality assurance is our priority. Our pharmacy is supported by internal standard operating procedures governing the storage, dispensing and handling of medicines, in line with General Pharmaceutical Council (GPhC) standards.
All services are under the professional control of a qualified pharmacist and are overseen by the Superintendent Pharmacist.
Evolution Homecare's dedicated dispensing pharmacy team is on hand to give advice and ensure the right medicines are dispensed at the right doses, to the right patients. The Patient Services Coordinators liaise with the pharmacy team and the appropriate customer contact, ensuring the smooth running of the entire prescription management process – always functioning within the framework provided by the Patient Management System.


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Coverage: GamePlan
3:30 PM ET, September 29, 2012
Kenan Stadium, Chapel Hill, NC
Top Performers
Passing: B. Renner (UNC) - 231 YDS, 3 TD, 1 INT
Rushing: G. Bernard (UNC) - 2 CAR, 70 YDS, 2 TD
Receiving: Q. Davis (UNC) - 4 REC, 89 YDS, 2 TD
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(Peru, Neb.) More than 100 handmade and purchased Valentine's Day cards are on their way to hospitalized veterans in Nebraska courtesy of Peru State College (PSC) students, faculty and staff. The cards are being sent as part of the U.S. Department of Veteran's Affairs National Salute to Hospitalized Veterans Week, Feb. 10-16. Hundreds of thousands of cards and letters are expected to be delivered to hospitalized veterans across the country. The Valentines from PSC are being delivered to the VA Medical Centers in Lincoln and Omaha.
PSC President Dr. Ben Johnson said, "Valentine's Day cards are a simple way to let our veterans know how much we appreciate their love for our country and the sacrifices they made so that we can live in freedom. Their courage, valor and service will never be forgotten."
PSC students involved in Peru's Individual Leaders of Today (PILOT) Club, a community service group, and Phi Beta Lambda, a state and national business association, were among those involved in the project.


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The Search Continues For Vittorio Missoni
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The fashion community is holding their breath as the search continues for Missoni. The plane, which was carrying Vittorio Missoni and his wife along with other passengers, has been missing since Friday.
The plane disappeared from radar during a trip was from Los Roques to Simón Bolívar International Airport located near Caracas, Venzuela. Vittorio is the CEO of the Italian fashion house that bears his namesake, Missoni.
Emem James | Elite.
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The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.
1. A method of forming a patterned polysilicon layer in a single chemical etch solution, comprising:
exposing a substrate having a photo-resist pattern on a polysilicon layer to a liquid chemical etch solution containing at least tetra methyl ammonium hydroxide and water at a preselected temperature and first concentration;
adding an ammonium hydroxide solution at approximately the same time as exposing the substrate; and
removing the substrate from the etch solution after a preselected time period.
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16. A method of etching polysilicon, comprising:
adding a first volume of an ammonium hydroxide solution to a second volume of a tetra methyl ammonium hydroxide solution;
immersing at least one surface of a polysilicon layer having a patterned photo-resist mask in the ammonium hydroxide and tetra methyl ammonium hydroxide solution within a specified time period after adding the ammonium hydroxide solution, the solution having a preselected temperature; and
removing the polysilicon layer after a preselected time period.
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This application relates generally to semiconductor devices and device fabrication and, more particularly, to etching polysilicon layers without a separate oxide decapping procedure.
The semiconductor device industry has a market driven need to reduce the size of devices such as transistors, capacitors and electrically conductive interconnects in order to produce smaller integrated circuit devices (ICs). Smaller ICs result in improved operational speed and clock rate, and reduced power requirements in both the standby and operational modes. Smaller ICs need thinner dielectric layers, thinner diffusion layers and more closely spaced conductive interconnect layers, such as doped polycrystalline silicon (poly). Producing these closely spaced (finer pitch) poly lines requires improved poly etching techniques. Micro electro-mechanical (MEM) devices may use etched poly patterns as a portion of the device. Reducing the size of MEM devices increases their utility and decreases their price and power consumption in many cases.
It is known to improve poly pitch by use of plasma etch techniques to increase the slope of the etched poly sidewall to approaching 90 degrees, and to reduce the amount of sideways etching that occurs under the edge of the photo resist mask. However, plasma etch processes are slow, require substantial expensive equipment, and may have problems with what may be known as etch selectivity ratios. The etch selectivity ratio is the rate of etching of a first material divided by the rate of etch of a second material. A high etch selectivity of a material layer being etched over the underlying layer is important in IC and MEM manufacture, since it allows increased margin for timed etches by providing what may be called an etch stop. The increasingly small and reliable integrated circuits (ICs) devices will likely be used in products such as processor chips, mobile telephones, and memory devices such as dynamic random access memories (DRAMs).
Thus there exists a need in the art for a simple, inexpensive and uniform poly etch method that has both a high poly etch rate (to decrease manufacturing cost), and high etch selectivity of poly over the underlying single crystal silicon, doped oxide, or other material layers. It is known to etch poly layers using wet chemical etch tanks. Wet etching is simple and inexpensive, but there is an issue with the etch uniformity, both in terms of across the single wafer variations, and in lot to lot variations over time. One reason for this lack of uniformity in poly etching relates to the fact that if a poly layer is exposed to the oxygen in the air, which may be hard to avoid, the surface atoms of the poly oxidize to form what may be called a native oxide. Such a native oxide may be from 10 to 20 Angstroms (Å) in thickness, and the oxide may grow in a few hours. Wet chemical etches that have high poly etch rates and high etch selectivity over underlying oxides may be non uniform since the etching of the poly can not begin until the native oxide, which may be call a cap oxide, is etched (or decapped). Since the thickness of the oxide cap is a variable that depends at least in part on how long the poly layer has been exposed, and the storage conditions, then the amount of time it takes to decap the poly layer before etching begins may result in non-uniform etching.
It is known to place the wafers having the poly layer to be etched in a decapping solution, such as a hydrofluoric acid (HF) bath, prior to placing the wafers in a poly etch bath. However, the wafers must be washed in deionized water (DI water) and dried prior to going into the poly etch bath, and such a washing procedure may cause sufficient native oxide to regrow to again inhibit the initiation of the poly etch. Further, the variations in the amount of time that pass between the end of the decap process and the beginning of the poly etch may again result in lot to lot variations in the amount of poly etched. Yet further, the need to have two different wet chemical baths and the increase in production time and cost make this solution less than optimal. There may also be an operator safety issue in having an acid bath in the same general vicinity as the typically caustic poly etch bath, since acids and bases should not be mixed without safety precautions.
The above-mentioned issues are addressed by the present invention and will be understood by reading and studying the following specification. A method of etching a polysilicon layer consists essentially of adding a spike of an ammonium hydroxide solution to a bath of tetra methyl ammonium hydroxide (TMAH) solution, and then immersing the substrate with the polysilicon layer in the solution. In an embodiment, the substrate is immersed in the ammonium hydroxide and TMAH solution within one hour of when the ammonium hydroxide spike was added. The substrate is removed after the preselected etch time period, and the substrate is washed to remove the ammonium hydroxide and TMAH etching solution from the substrate, and the substrate is dried. The ammonium hydroxide and TMAH solution provides a rapid decap and polysilicon etch rate in a temperature range of approximately 60° C. to 90° C. It is possible to increase the etch rate by use of a pressure cooker type arrangement that allows the temperature of the TMAH to be raised to above the boiling point of the solution. The etch process may also be preformed on a spin vacuum chuck with either pressure spray dispense nozzles, carrier gas mist dispense nozzles, or with low pressure stream flow dispense nozzles. The TMAH concentration has a broad manufacturing tolerance and may vary between 2.5% and 25% in deionized (DI) water, but a preferred concentration is 12.5% to account for both dilution due to repeated spikes of ammonium hydroxide solution, and to account for evaporation during the course of the life of the etch bath. One method of controlling the life of the etch bath is to maintain the pH of the solution at a greater value than 13. The ammonium hydroxide solution used as the spike concentration is preferably approximately 35% in water, and the volume of the spike may vary from as low as 0.2% to as much as 2% of the total volume of the etch bath.
The decapping etch rate of the native silicon oxide layer on the top surface of the polysilicon layer may be greater than 800 Angstroms per minute. The etch rate of the polysilicon layer is approximately 4000 Angstroms per minute with the etch rate of the underlying oxide layer less than 20 Angstroms per minute.
These and other aspects, embodiments, advantages, and features will become apparent from the following description and the referenced drawings.
The following detailed description refers to the accompanying drawings that show, by way of illustration, specific aspects and embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the present invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.
The terms wafer and substrate used in the following description include any structure having an exposed surface with which to form an integrated circuit (IC) structure or a micro electro-mechanical (MEM) structure. The term substrate is understood to include semiconductor wafers. The term substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art. The term conductor is understood to generally include n-type and p-type semiconductors and the term insulator or dielectric is defined to include any material that is less electrically conductive than the materials referred to as conductors or as semiconductors.
The term "horizontal" as used in this application is defined as a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate. The term "vertical" refers to a direction perpendicular to the horizontal as defined above. Prepositions, such as "on", "side" (as in "sidewall"), "higher", "lower", "over" and "under" are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
The wafer 110 either remains stationary, or spins at a predetermined speed or program of spin speeds, while an etch mixture is dispensed from dispense fixture 112, illustratively shown as a shower head drip system. The subject matter is not so limited, and the fixture 112 may be a simple open tube nozzle, a high pressure atomizer (using purge gas 114 to break the etchant into tiny droplets), a linear array of drip nozzles, or other liquid dispense methods. The dispense fixture 112 receives materials such as a purge gas 114 through control valve 116, or deionized water (DI water) 118 through valve 120, or tetra methyl ammonium hydroxide (TMAH) 122 through valve 124, or ammonium hydroxide 126 through valve 128, or mixtures thereof, via pipe 130.
The etchants may be stored and dispensed in their final solution concentrations, or they may be mixed in pipe 130. As an illustrative example, the TMAH 122 may be in the form of 100% TMAH and the valve 124 may be opened sufficiently to provide a 10% mixture of TMAH mixed with 90% DI water 118 through valve 120. Alternatively, the TMAH 122 may be stored in the form of a 10% solution and dispensed through valve 124 directly through pipe 130 and dispense fixture 112 onto the substrate 110 without any mixing with any of the other stored materials 114, 118 or 126.
In an embodiment, the TMAH is provided as a 12.5% solution in DI water, and is mixed with 35% ammonium hydroxide during an initial decap etch stage prior to the main poly etch cycle. The TMAH storage 122 has a thermocouple and heater element to maintain a TMAH temperature of 90° C. The substrate 110 may be spun slowly during the initial oxide decap etch, or it may be held stationary in a puddle etch.
The polysilicon layer 420 may have what may be known as a native oxide layer 424 that may form in varying thicknesses due to exposure of the polysilicon layer 420 to the oxygen or moisture in the air during the time period after the polysilicon deposition, during the patterning process, and before the poly etch process. Removing this native oxide, also known as an oxide cap, may be known as a decapping process. A patterned photoresist layer 422 is formed on those portions of the polysilicon layer 420 that are desired to remain after the poly etch process.
A number of patterned and etched poly lines are shown with an orientation that is into and out of the plane of the figure. The poly lines such as 412 may be used to make an electrical contact to the diffused region 404 through the TiN layer 410, and may also make contact with an overlaying layer of metal, such as aluminum. The TiN layer may be used in the contact recess 408 to prevent aluminum to silicon alloy spikes, or to prevent impurity contamination from reaching the sensitive electrical region at the diffusion to substrate boundary. Since the poly line 412 may be unintentionally (or intentionally) not completely covering the bottom of the contact recess 408, it may be important to have a poly etch process that has a large poly to TiN etch ratio, so that the TiN may act as an etch stop. In a similar fashion, the poly lines 414 on the top of the dielectric layer 406 should have a etch process that has a large poly to oxide etch ratio, so as to not unnecessarily thin the protective dielectric layer 406.
Structures such as shown in
The use of an integrated decapping and polysilicon etch in a single etch bath has cost and time of manufacture benefits over etch systems that use separate etch baths for the decap etch versus the poly etch. Typically, a dilute hydrofluoric acid (HF) is used to remove the cap oxide, since HF solutions may be buffered to provide an etch rate that is consistent over a fairly long time period. After the HF decapping etch, the substrates must be washed and dried because of safety concerns with acids in general, and that acids and basic solutions such as TMAH have exothermic reactions when mixed. Thus, the poly etch process requires two different and typically incompatible etch baths that should not be located near each other due to safety concerns. This increases the cost and the amount of fabrication area needed for the etch process, and causes increased safety concern and chemical disposal problems. In addition, the time to etch the poly has increased, which also increases manufacturing cost.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. This application is intended to cover any adaptations or variations of embodiments of the present invention, including TiN layers with graded compositions. It is to be understood that the above description is intended to be illustrative, and not restrictive, and that the phraseology or terminology employed herein is for the purpose of description and not of limitation. Combinations of the above embodiments and other embodiments will be apparent to those of skill in the art upon studying the above description. The scope of the present invention includes any other applications in which embodiments of the above structures and fabrication methods are used. The scope of the embodiments of the present invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
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I heard a rumor that this would be coming out soon and Rhymefest throws some serious jabs at Charles. But something just doesn't seem genuine about the track for me, I guess I just never saw Rhymefest as a diss track artist. The verses were OK at first but continue to get better all the way until the end when he speeds up the tempo and is spitting really fast and kills it. I would like to hear more from Rhymefest too about this, I just don't know enough about the whole situation to comment, but I do know Charles has been getting into lots of trouble recently with other rappers. He seems to piss people off like Rhymefest and that whole Soulja Boy thing that was made up. That or Interscope is doing some serious leg work to get this dude exposure any way possible.
Tagged: charles hamilton, chucky cheese, diss, Rhymefest


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Thursday, October 10, 2013
© Copyright 2015 Clayton News Daily
DULUTH — A diverse gathering at the Gwinnett Center heard a message of compassion, kindness and the importance of education from the spiritual leader of Tibet, the Dalai Lama, Tuesday.
Metro Atlanta has an emerging Buddhist population with Hwa Duk SA Buddhist Temple and the Gum-Gang-Gyon-Dok-Song-Haw in Jonesboro, the Laotian BuddhistCommunity Temple in Riverdale and the very visible Wat Loa Budda Phothisaram in Conley just north of Henry and Clayton counties.
However, Christians, Jews, Muslims and individuals from various faiths and denominations came together for what was called "The Visit" from the Dalai Lama.
The Visit 2013 was hosted by Emory University as part of the Emory-Tibet partnership that dates back to 1987.
Since that time Emory University has sent hundreds of students and faculty to Tibet and hosted Tibetan monks for a fusion of modern science and what the Dalai Lama has called "an ancient science of the mind."
After leaving the stage and going for an impromptu walk into the crowd to greet a man he described as his "hero" because of the non-violent ways he reacted to being wounded and blinded in conflict in Northern Ireland as a young man, the 14th Dalai Lama began his public address decrying world violence.
He said in his lifetime he has seen WW II, the Korean War, Vietnam and "some violence even today like Syria."
Despite what he described as the destruction and violence of the 20th Century, his message was one of hope for the 21st Century.
He lamented, "The 20th century — a wonderful century with a lot of innovations finding many useful things — however it has also brought violence."
In contrast, he said, "There is a possibility to create a peaceful century. We must realistically face problems and potential conflict in order to create peace. We must develop talk, [and] solve problems by creating a century of dialogue and reduce extreme self-centered attitudes," he said.
The Nobel Peace Prize winner told the crowd that peace and nonviolence come from a sense of compassion.
"We must make this century a century of compassion," he said.
Compassion, he suggested, must begin on a personal level. "Our happy life depends on community," he taught, urging what he called "a sense of the oneness of humanity."
Delivering his version of the adage "actions speak louder than words," the Dalai Lama said, "It is not enough just to complain. We have intelligence to try to find the way to solve this problem … pray to God maybe God will do something. I don't know … I believe that action is more important than faith and prayer."
Born Tenzin Gyatso, and titled His Holiness the Dalai Lama, he describes himself as "a simple Buddhist monk," and told the large crowd, "We need vision. We need enthusiasm."
With a message that was simple, sometimes intentionally repetitive, he was also notably personable and often humorous, drawing both laughter and applause throughout the presentation.
Many of his themes and truism could have just as easily been spoken in a Catholic or Protestant church, and his words obviously resonated with a very diverse group of people who paid large sums of money to hear him speak.
"Faith and reason must go together," he said, explaining that while some people might rely on what they call faith, "The real purpose of faith is the practice of love."
Regarding world peace, he said nations must find "common interests, use common sense and based on common sense" focus on their "common experiences."
"Common interest is more important than individual nation's interests," he said
The highly-respected spiritual leader said small children have a sense of right and wrong, but added "Even dogs and cats, if you teach them sincerely they respond very sincerely" as he expressed the importance of parents raising their children with a sense of compassion.
"Dogs and cats, if you show them compassion, they appreciate that," he said.
While talking about how even animals respond to compassion, he did admit that he is not so sure the same principle could be applied to mosquitoes, saying their brains might just be "too small."
Contrasting what he called "a sense of compassion for fellowman" with being self-centered, he said that often, "Our way of thinking (is) based on extreme self-centered attitudes" — what he called "the basis of violence."
When asked if helping others and living a compassionate lifestyle is in fact selfish behavior because being kind to others make us feel good about ourselves, he responded it is "Wise-selfish, not foolish-selfish."
More like this story
- A Burning question: Extremists on 9/11 ( September 6, 2010 )
- JOE LAGUARDIA: St. Patrick inspires us to build bridges with other faiths ( March 13, 2015 )
- Worshipping the boob tube - R.H. Joseph ( September 29, 2003 )
- Worshipping the boob tube - R.H. Joseph ( September 26, 2003 )
- Worshipping the boob tube - R.H. Joseph ( September 27, 2003 )


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MMA News
UFC NEWS – Overeem Would Like More Fair And Frequent PED Testing In MMA
"I'll be tested four times in three weeks this month, so after this, there cannot be any more doubts. The thing is, I've fought in the States before and every time I got tested, I've never tested positive. So I don't where all [the speculation about steroid use] is coming from. I'm too focused on my career, and I don't really pay attention to these messages… I cannot judge other fighters, though of course sometimes you have your suspicions. Do I think testing should be [done] more [frequently]? Yes, I do think it should be done more, but I think it should be applied to all athletes and not just a randomly select few. That would be the fair thing to do, right? Otherwise, you would have select testing, and that is unfair."
UFC heavyweight contender Alistair Overeem took to YahooSports! to talk about the Performance Enhancing Drug testing procedures in MMA amongst other things.
His call for more frequent and fair testing guidelines is a very relevant topic, especially in light of what he has gone through this week while trying to obtain a license to fight in Nevada.
But is he right? Should someone step up and implement more stringent testing guidelines in our sport? Especially considering that 99% of fighters claim that 99% of fighters use some form of performance enhancer yet outside of a select few fighters none get caught or are even tested?
Speak on it BJPENN.COM!
Click here for the latest ufc 141 coverage provided by BJPENN.COM
27 Responses to "UFC NEWS – Overeem Would Like More Fair And Frequent PED Testing In MMA"
Uber-reem wants frequent PED testing about as much as Lohan wants a sobriety test. What a joke.
hahaha i LoL'd. Reem.should get blood tested as frequentlyy as possible for the rest of.his life. That oughtta do it
-]. Welcome to UFC man .[-
is it though? this is his career and future, i mean i know he'll be fine without the UFC just like fedor, but still, he's a professional and his future is on the line
I think the solution is to simply make the penalities more meaningful. You gotta make it to where the punishment is too much of a risk to take. More and more testing isn't really the answer. Make it hurt badly when you get caught…that's the only way.
More and more tests are really just an inconvience to the fighters that are clean and sets up chance for one of them to legitimately miss a test and then have suspicion cast upon them and possibly a suspension, even though they are clean. It punishes the good guys in order to catch the bad guys.
"…For a guy who is already under public scrutiny as a suspected steroid abuser, Overeem's decision to skip the country last month on the same day the Nevada State Athletic Commission notified him of a "random" drug test prior to his UFC 141 bout against Brock Lesnar is the kind of public relations gaffe he absolutely can't afford." Do you really want more frequent testing, 'Reem? Do you really?
he booked his flight to return to holland, even before he was notified.
how about, you don't know the full story, so stop speculating.
I wish is mother a speedy recovery. But you are blind if you do not see how this could be viewed as suspect. The guy gains 60+ pounds of sheer muscle while competing internationally under questionable commissions and bolts from the states the day he is asked to submit his PED testing. I understand he says he booked in advance of the notice, and his family is more important, no doubt, but this looks bad. Be a fan, that's fine, but don't be blind. Perception is everything and this is not perceived well .
You're ignoring the fact the fact that he had huge problems cutting down to 205 and he was walking around much bigger than that.
Look at Hendo, the difference of him @185 or at 205…
So he didn't put on 60 pounds of muscle, he stopped dieting and cutting a lot and could finally let himself gain musclemass, instead making sure that he never got any bigger. Which is natural thing to get if you train all the time, you gain mass and muscles…
Its a big problem and it can affect your performances in big way.
But now he must go out of his way to show everybody that he is indeed clean…
Let the comission know in advance if he goes away for example when he's got a fight coming up.
By the way, Lesnar doesn't exactly look like he got his muscles the regular way either.
For me personally, i don't care if they are roided or not because i think a vast majority are on something TRT or whatever.
Hey chango when did he cut to 205?
50 pounds not 60 and it was in 5 years, hell I can go to a buffet and gain 2 pounds before I take a crap, I can also go to a buffet every night and then go hit the weight room and gain 10 pounds of muscle easily in a month, so 50 pounds in 5 years is easy. Hell when I started weight training I gained 30 pounds of muscle in 2 years without any supplements or steroids, and that is a fact.
How about you take the time to figure out The definition of the word 'speculate' and figure out if it really makes sense in the way you used it. I quoted an article and asked a question.
He was not notified of any random test on the day he left, get that crap straight. When he applied for his license he was told he needed to submit a urine sample within usually 10 days of the fight, they can notify you of a random test, but if you read the article that was clearly not done, NSAC got their panties in a bunch because he has a life and wanted to help his SICK mother. Reem NEVER skipped out on a mandatory test get that crap straight! Maybe you should start to read everything instead of piecing things from one article to another to another, if you had then you would realize your comments are totally off base and you sound like an idiot.
Hes only being asked to do more because he didn't do the same basic test that everyone takes. Had he followed simple direction he would not be recivei g any different treatment from anyone else. He only has himself to blame for this
i think everyone is missing the point here, typical though, hes asking more more tests across the board.. i think there needs to be more testing across the board. cos you will find 95% of your favourite fighters are using some crap to cut weight.. look at Rampage.. how the fuck do you cut to 205 from 265 within months? -60lbs diff anybody?
Really 95%? I'd love to know how you know so much about all the top guys? Just because the do stuff you can't doesn't mean they're using! If every top guy was using then more would get caught, or hell they might even get rid of testing just so all the fan favourites won't get caught! Also out of curiosty when was rampage 265?
Pedro what did he go thru? He failed to take the tests while he was here in the States, He failed to do that and the test have to be at approved sites not his own doctor. his doctor could have tested him 100x .
Yeah I could really careless if they are roided up or not. Everyone that is speculated of using them have lost before so its not doing much for their winning lol. Just cause your on roids doesn't mean you have a chin of steel. Your a human if you get hit in the right place your going down. Yeah its bad for your health and mind but fuck it. If they want to screw up their lives let them. It will take the dumb cheats out of the equation.
IF he comes back clean all u jackasses doubting the REEM can kiss his testosterone makers (nuts)..LMAO! Fingers crossed dammit..
Reem wants better testing? LOL funniest shiit I heard all day.. Talk about irony.. Funny thing is everyone is so focused on his physique but the truth lies in his face, sorry but there is not a diet or exercise regimen on the planet that will alter the structure of your face and jaw.. His face tells the true story of what he is on..
I got the same features on my pretty face, and I'm straight! It's our Scandinavian blood bred by Vikings .. the conquerors! [ ' _ ' ]
His face changed from when he was already well into his mid 20's.. It is not the features, and no you don't have the same features.. I know your a fan so your really trying to stretch the explanations but you really cant. If you want me to break it down I will.. I don't even know where to start so many points I can use..
No need bro.. Let's just hope he's clean for the fights to come..
Yes… more testing more often. Every round of fights each night… 1 out of 2 has serious back acne, not the kind you get from dirty sheets… if anyone involved in sports doesn't realize that is a sign they are simply not willing to see it. If we can see if on the cameras… its beyond bad.
this guy takes roids point blank period… aint no way u got that big by eating horse meat… sorry bra that shit dont fly in the states..lol..
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Grey's Anatomy
Who Died on Grey's Anatomy Season 8? It Was (SPOILER)
Dying (ugh, sorry) to know who was killed off during the highly-buzzed Grey's Anatomy Season 8 finale? Read on to find out!
Warning, this contains major spoilers about the finale! Read spoilers at your own risk, For more on Wetpaint Entertainment's philosophy on spoilers, click here.
Are you sure that you really want to know?
Okay ... Lexie (Chyler Leigh) passed away. She was fatally injured after getting trapped under some plane debris during the crash. She died while Mark (Eric Dane) held her hand and told her that they were going to be fine and have kids. Suffice to say, it was heartwrenching and bittersweet, just as creator Shonda Rhimes had promised.
Stay tuned for our short review of the finale and be sure to check back tomorrow for our in-depth recap.
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text: After combing the faq under the Documentation link at www.openbsd.org I was unsuccessfull in finding a link leading to information about how to access the os when some thing is scewing up normal booting. I see no troubleshooting section or something similar. I've jacked up /etc/fstab somehow while editing it I think. Booting leads to repeated message: Init: can't exec getty '/usr/libexec/getty' for port /dev/ttyCO: No such file or dir DATE_STAMP The last thing I did before a reboot was add `softdep' to all slices in /etc/fstab. I am conducting some experiments to see how much speed up it gives me. I think I may have left trailing garbage or some other edit booboo. Not really sure if this is the source of my trouble. Things were working fine with my new install till this, so it seems pretty likely. So where is the documentation for accessing a crippled OS? How do I get to ftab and clean it up? Either I've missed some obvious link at: http://www.openbsd.org/faq/index.html Or there is none there that is clearly about emergency proceedures.


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The ACLU filed suit in federal court yesterday seeking to force the White House to turn over records related to the killing of Anwar al-Awlaki, the US citizen assassinated in a drone attack in Yemen last year.
The lawsuit, filed in the U.S. District Court for the Southern District of New York, charged the Justice and Defense departments and the CIA with illegally failing to respond to requests made in October under the Freedom of Information Act (FOIA). It cited public comments made by President Obama, Defense Secretary Leon E. Panetta and other officials in arguing that the government cannot credibly claim a secrecy defense.
"The government's self-serving attitude toward transparency and disclosure is unacceptable," the ACLU said in a statement. "Officials cannot be allowed to release bits of information about the targeted killing program when they think it will bolster their position, but refuse even to confirm [its] existence" when asked for information "in the service of real transparency and accountability."
In addition to statements by Obama and Panetta, the lawsuit notes that "media reports about the targeted killing program routinely quote anonymous government officials describing details of the program."
Just the other day President Barack Obama talked openly about the drone program in a YouTube interview. And Panetta spoke about the Awlaki case on 60 Minutes this past Sunday. Yet when the ACLU tried to FOIA the Office of Legal Counsel document justifying the killing of American citizens, or the evidence used to confirm Awlaki's role as a terrorist the government has always denied them citing state secrets. The lawsuit cites several other instances where the President or top officials have mentioned the drone program or the killing of Awlaki publicly.
The New York Times has also filed suit seeking the legal memos. The request for the evidentiary basis for the killing of Awlaki, along with his son Abdulrahman and Samir Khan, another US citizen killed in the initial Awlaki strike, is new.
Last week, the Daily Beast reported that the Administration was about to release information about the Awlaki killing, but reportedly the planned speech by Eric Holder will not even mention Awlaki by name. So the Administration keeps playing this game of public comment when it serves them and secrecy when it doesn't.
As Adam Serwer notes, the ACLU has sued before over information about the drone program and a judge sided with the government in denying disclosure. But the Administration has spoken much more openly in the ensuing months about the program so there's a chance the ACLU will be successful this time around.


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Marcus Rivera
Aaron Ortiz
Aaron Ortiz
Our team purpose is to learn and to become inspired. We want to learn how to surpass our goals in life, and become inspired enought to pursue our dreams.
Roadtrip Nation Exploration
Zina Zarco
Home Base:
The Arbor Win Youth Opportunity Center
All Rights Reserved
The beginning to a good looking start
Hey ya'll i'm Marcus rivera, i"m the team leader and my two cool and awesome teammates are Aaron Ortiz and Rafael Beltran. We are excited to get our first interview and we are nervous (read more)
Written on July 7, 2010 at 12:00am
The beggining to a good looking start
What's up everybody, I am Aaron Ortiz and I am a student at Coachella Valley High School. Me and my teammates Marcus Rivera and Rafael Beltran, we are here because we want to find out what we (read more)
Written on July 7, 2010 at 12:00am
Start Date: Roadtrip not started.
Start Location: Indio, CA
Total Interviews: 0
Miles Logged:
End Date: Roadtrip not started.
End Location: Indio, CA
Total Views: 986
Inspiring (3)
Helpful (4)
Entertaining (1)


text:
Out of context
Here's a photograph I thought was funny when I shot it but after thinking about publishing it in the newspaper, figured it would bring an incorrect connotation. I just finished dinner while in Twisp last week waiting for an evening assignment and noticed two businesses, side-by-side, at the local strip mall. I liked how they played off each other so knelt down to make a photograph and was happy when the massage business employee looked out her window and pulled the blinds down.
It was funny enough I thought to use but it implies that the massage business is more than just a massage business (I guess it is with their business name - but you know what I mean).
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Wed November 28, 2012
Jon Spencer Blues Explosion On World Cafe
By editor
Originally published on Wed November 28, 2012 4:48 pm
The Jon Spencer Blues Explosion — Jon Spencer, drummer Russell Simins and bassist Judah Baer — has kicked out the jams for more than 20 years. Formed in 1991, the band draws on punk, blues and rockabilly, and has collaborated with artists ranging from Elliott Smith to Solomon Burke to Martina Topley-Bird to Steve Albini and even Ad-Rock of The Beastie Boys.
JSBX recently released its 10th proper studio album, Meat and Bone. The trio joined World Cafe host David Dye to play two songs from the record and discuss its two decades as one of rock's rowdiest bands.
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yes oranges, lemons, lime, apricots from our backyard.... we have, at times also grown tomatoes... and some herbs too!

Oh and we had chickens and we ate the eggs they laid .. super yummy!
Oranges from my backyard. They are the old variety.. juicy, thin skinned, delicious!
Yes several times, grapes, cherries, various berries, apples, bananas, apricots, and I am sure there are some I am forgetting
apples, oranges, pears, figs, strawberries, tomatoes, grapes, blackberries, bananas, watermelons, lemons, limes

they are sooo delicious right out of the backyard
Oranges in Sicily - delicioso.
Apples, cherries, peaches, apricots, grapes, strawberries, tomatoes, beans, okra, squash, melons, corn.

Those are just a few.

Fresh is always the best.


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2015 Nissan Murano spied showing new details
Could be introduced sometime next year
The 2015 Nissan Murano has been spied wearing less camouflage than ever before.
Caught undergoing testing in the United States, the latest pictures reveal the model will be heavily influenced by the Resonance concept which debuted at the North American International Auto Show earlier this year. As a result, the crossover has boomerang-shaped headlights, a dual exhaust system and a prominent character line. We can also see protruding taillights and a distinctive C-pillar.
Little else is known about the Murano but it could be equipped with a 3.5-liter V6 engine that develops 260 bhp (193 kW) and 240 lb-ft (325 Nm) of torque. It could be paired to an XTRONIC continuously variable transmission that can be connected to an all-wheel drive system.
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Comments (3)
Please don't make a cabriolet version like last time...
Jan 3rd, 2014 6:29pm
i like the look so far, but it would be nice to see a 8-speed transmission for the premium vehicles on Nissan's Line up, like the Maxima.
Dec 22nd, 2013 8:33am
Im pretty sure it will still use a craptastic CVT
Dec 19th, 2013 11:05pm


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Academics . Illustration . Courses
Illustration for Publication
Course No. ILL 363 Credits: 3.0
Faculty George Vlosich | John Chuldenko
This course will focus on applications of digital and tactile processes, materials, and techniques from concept development through final reproduction. Offered fall.
Illustration II
Course No. ILL 364 Credits: 3.0
Faculty George Vlosich | John Chuldenko
Prerequisite(s) Fundamentals of Illustration
This course will prepare illustration students to become working professionals within the marketing communications community. It will motivate the student's visual awareness, teaching the student to conceptualize, design and execute on a professional level. Students learn to produce quality illustrations and to be responsible for the conceptual aspects of a project whenever necessary. This course encourages students to develop a confident knowledge of design in illustration, the thinking process, and production techniques necessary to compete in the field of applied arts. Prerequisite: ILL 263 Fundamentals of Illustration. Offered spring.
Illustration: Advanced Illustration Studio Projects
Course No. ILL 463B Credits: 3.0
Faculty John Chuldenko | Suzanne McGinness
Students are required to begin thinking of their upcoming BFA thesis project over the summer. On the first day of class students will be expected to present their thesisÕ central idea and have first iterations for visual expression of that idea. The beginning of the thesis project consists of research, discussion and tightening up of the central idea. Offered fall.
Illustration: BFA Preparation
Course No. ILL 463A Credits: 3.0
Faculty James Groman | Suzanne McGinness
An independently initiated illustration thesis project is defined in a statement detailing the nature and purpose of the project, medium, and procedural timetable. A year-long project is created displaying technical competence, solution-based ideas, responsibility to professional standards, self-reliance, determination and perseverance learned throughout a student's years of education. Offered fall.
Illustration: BFA Thesis and Exhibition
Course No. ILL 464A Credits: 3.0
Faculty John Chuldenko | Suzanne McGinness
Students will develop saleable skills and perform in a professional manner, demonstrating good attitude and work habits. The artwork produced for the BFA Thesis Exhibition emphasizes clarity of concepts, professional responsibilities and developmental procedures necessary to work in the field. Offered spring.
Illustration: Final Project: Illustration Portfolio
Course No. ILL 464B Credits: 3.0
Faculty John Chuldenko | Suzanne McGinness
The illustration department emphasizes the understanding of contemporary themes and concepts as a basis for nurturing the student's ability to translate this acquired thematic vocabulary into inventive visual solutions. The main objective is to motivate students' visual awareness to a professional level to meet marketplace needs. Offered spring.
Illustration: Internship
Course No. ILL 399-499 Credits: 0.0
Elective credit can be given on a case-by- case basis for an internship developed by student through the career services office, with advance permission of instructor and head of department.
Image, Narrative, and Sequence
Course No. IME 267 Credits: 3.0
Faculty Elizabeth Halasz | Larry O'Neal | Mary Jo Toles
The concentration of this course is an intensive study on discussion and research of the aesthetics, techniques and problems of pre-production for digital media visual storytelling, for both linear and non-linear output. We will investigate ways in which to use more than characters to define mood and forward the narrative. We will focus on how elements such as subject/object positioning, background, props, timing, audio, camera angles, lighting, graphic design, composition of frames, and using suitable text enhance the communication of your ideas. We will hold regular presentations and critiques analyzing your composition of all visual and audio elements in progress and discuss methods in which to enhance everything to work together to tell a more complete, fully realized narrative. Emphasizing the importance of interdisciplinary experimentation, students are encouraged to pursue personal and independent expression while giving full attention to researching and developing original concepts. Offered fall and spring.
Illustration students in Adjunct Professor Bradley Ricca's Graphic Narratives class wowed the crowd at the fifth annual Genghis Con Comics and Arts Festival.
Larry O'Neal
Assistant Professor/Chair of Graphic Design
Larry O'Neal is a graphic designer/illustrator with a unique professional history that allows him to pro...more
While at CIA, you'll learn from the masters through our rigorous, world-class curriculum and connect with working professionals to begin your career.


text:
Below is the poem entitled MSN Messenger which was written by poet
Attal. Please feel free to comment on this poem. However, please remember, PoetrySoup is a place of encouragement and growth.
Read Poems by
Gael Attal
I'm not an anti-social person, I insist.
See, I have 184 people on my contact list.
Granted only 22 of them are online
And only 3 on mobile, which is really fine.
Let's just say I enjoy the company.
And honestly 22 people is plenty.
Even though I only talk to one or two,
Besides, I haven't got much else to do.
The thing that I enjoy the most
Is the concept of talking coast to coast.
I like the little box in a window so blue.
And the thought that someone else has one too.
I'm not an anti-social person. I'm just a teen
Sitting alone in a room. Facing a bright screen
As the hours of my life slowly tick away.
Before you know it, I've been here all day.
But I like the silence. It makes me strong.
Sometimes I break it, and play a song.
I could surf the web, find something I like.
If not I could just play Counter-Strike.
But then I stop and begin to think.
I've been sitting here all day, no food or drink.
And pretty soon I start to stink.
I don't think I can even blink.
What if I was to go outside?
Would I succeed, if I tried?
But the web is so awesome! I laughed and I cried.
Sitting very lonely, as the planets collide.
Now I feel distraught,
Obnoxious to the clocks.
Am I really anti-social? Am I starting to rot?
Behind these bolts and locks
Lies the answer I have sought.
I think hard, holding on to my socks.
But before I could finish my thought...
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