text:
A non-volatile memory cell is constructed from a chalcogenide alloy structure and an associated electrode side wall. The electrode is manufactured with a predetermined thickness and juxtaposed against a side wall of the chalcogenide alloy structure, wherein at least one of the side walls is substantially perpendicular to a planar surface of the substrate. The thickness of the electrode is used to control the size of the active region created within the chalcogenide alloy structure. Additional memory cells can be created along rows and columns to form a memory matrix. The individual memory cells are accessed through address lines and address circuitry created during the formation of the memory cells. A computer can thus read and write data to particular non-volatile memory cells within the memory matrix.
1. A non-volatile, integrated circuit memory structure, comprising:
a semiconductor substrate having a substantially planar surface;
at least one chalcogenide alloy structure coupled to the substrate and having a side wall, which is not parallel to the surface; and
at least one electrode having a side wall, which is not parallel to the surface and which is coupled to the side wall of the at least one chalcogenide alloy structure.
2. The memory structure as set forth in
the at least one chalcogenide alloy structure and the at least one electrode are deposited films; and
the side walls of the at least one chalcogenide alloy structure and the at least one electrode are substantially perpendicular to the surface.
3. The memory structure as set forth in
the at least one electrode comprises a plurality of electrodes;
the at least one chalcogenide alloy structure comprises a plurality of chalcogenide alloy structures; and
a side wall of each electrode has a surface area, which is smaller than a surface area of a side wall of a corresponding chalcogenide alloy structure to which the side wall of the electrode is connected.
4. The memory structure as set forth in
5. The memory structure as set forth in
surfaces of the electrodes opposite the substrate are polished; and
at least portions of the side walls of the electrodes are disposed within the chalcogenide alloy structures.
6. The memory structure as set forth in
at least one address row;
at least one contact connecting the at least one address row to the at least one electrode; and
at least one address column connected to the at least one chalcogenide alloy structure;
wherein the at least one address row and the at least one address column are disposed perpendicularly to one another on different horizontal planes.
7. The memory structure as set forth in
a surface of the at least one electrode opposite the substrate is polished; and
a diode is disposed between the at least one electrode and the at least one address row.
8. The memory structure as set forth in
the least one electrode comprises a plurality of electrodes;
the at least one chalcogenide alloy structure comprises a plurality of chalcogenide alloy structures; and
the at least one address row and the at least one address column comprise pluralities of conductive address rows and columns formed within trenches that were etched into a dielectric material.
9. A non-volatile, integrated-circuit memory cell structure, comprising:
a substrate;
a chalcogenide alloy structure; and
an electrode layer formed on the substrate, the electrode layer having both a layer thickness and a contact surface, the contact surface being coupled to the chalcogenide alloy structure and having a dimension substantially equal to the layer thickness.
10. The memory cell structure as set forth in
11. The memory cell structure as set forth in
12. The memory cell structure as set forth in
13. The memory cell structure as set forth in
14. The memory cell structure as set forth in
both the electrode and the chalcogenide alloy structure have elongated shapes which are perpendicular to one another; and
the contact surface is orthogonally disposed relative to the elongated shape of the chalcogenide alloy structure.
15. The memory cell structure as set forth in
an address column connected to the chalcogenide alloy structure; and
an address row connected to the electrode;
wherein the address row and the address column are orthogonally disposed on different horizontal planes.
16. A memory cell structure, comprising:
a substantially planar substrate;
at least one electrode coupled to the substrate and having a substantially planar surface terminated by at least one side wall; and
at least one non-volatile, phase-changeable structure coupled to the at least one side wall, the at least one structure being capable of being switched between a first state and a second crystalline state, wherein the first state and the second crystalline state have different impedances and an energy required to switch the structural is proportional to a thickness of the at least one side wall, the thickness being measured in a direction orthogonal to the planar substrate.
17. The memory cell structure as set forth in
18. The memory cell structure as set forth in
the first state is a crystalline state; and
the at least one structure comprise at least one chalcogenide alloy structure.
19. The memory cell structure as set forth in
the at least one electrode comprises a plurality of film electrodes;
the at least one structure comprises a plurality of film structures; and
the electrodes and the structures are coupled between address rows and address columns.
20. A method of fabricating a memory matrix of phase-changeable memory cells, comprising:
forming a plurality of address rows on a semiconductor substrate;
forming electrodes above the address rows, each of the electrodes having a substantially planar surface and a side wall, which is not parallel with the planar surface;
forming chalcogenide alloy structures above the address rows, wherein upon formation of both the electrodes and the structures the side walls are electrically coupled to the structures; and
coupling the structures to a plurality of address columns.
21. The method as set forth in
22. The method as set forth in
the sidewalls are substantially perpendicular to a plane formed by the address rows and the address columns; and
the structures are disposed in juxtaposition with the side walls.
23. The method as set forth in
[0001] 1. Field of the Invention
[0002] The present invention relates generally to a memory cell structure for semiconductors, and more particularly, to chalcogenide memory cells.
[0003] 2. Description of Related Art
[0004] Integrated circuits, typically in the form of microprocessors, microcontrollers, or other logic circuits, are used to control the functions of many modern electronic devices. For example, integrated circuits are used to control the functions of computers, telephones, and many other consumer electronics. It is generally necessary for the integrated circuits to retrieve (read) and store (write) data as they perform their functions. The data may be in the form of instructions for the integrated circuits (e.g., a program), data necessary for the execution of a program, or data generated during the execution of the program. It is highly advantages to store the data in memory devices which are easily accessible by the integrated circuits.
[0005] Many different types of memory devices are known for the storage of data. In selecting a memory device, one should keep in mind the particular requirements for the data with which the memory device will be used. For example, the quantity of data and the required access time to the data can play an influential role in memory device selection. Regarding high-capacity memory devices, floppy disk drives, hard disk drives, compact disks (CDs) and digital video disks (DVDs) are commonly used to store large amounts of data and/or large programs. While facilitating dense storage of data/programs in a nonvolatile format, these memory devices require motors and other electro-mechanical devices to operate. Accordingly, relatively large amounts of electricity can be consumed and access time to the data can be attenuated.
[0006] Integrated circuits may also be used to form memory devices. Two common types of integrated circuit memory devices are random access memory (RAM) and read only memory (ROM). Many improvements and variations of RAMs and ROMs have been advanced to further their performance, a substantial percentage of which improvements are commercially available. Memory devices constructed of integrated circuits are relatively small, durable, and consume small amounts of electricity making them very adaptable and easy to use. In addition, integrated circuit memory devices typically have faster access, reading and writing times, compared to other types of memory devices.
[0007] However, conventional RAMs and ROMs have their own disadvantages. RAMs, while having fast data transfer rates and efficient writing architectures, must be continuously powered or their memory contents may be compromised. Thus, RAMs may loose their data, i.e. they are volatile, when power is inadvertently or accidentally removed. ROMs, while retaining their contents even in the absence of power, are limited in the number of times to which they may be written, the speed, and the manner in which they may be written. RAMs and ROMs, even with their limitations, find overwhelmingly practical applications in a majority of electronic devices. However, a need exists in the prior art for memory devices that can harness the advantages of integrated circuits while avoiding the disadvantages of RAMs and ROMs.
[0008] In an effort to create integrated circuit memory devices which are nonvolatile and which may be quickly and repeatedly written to, phase changing materials have been researched. Specifically, chalcogenide materials have been studied for their use as storage media for data. Chalcogenide materials generally comprise one or more of the elements Ni, Se, Te, Sb and Ge and are considered as being able to change phases, or states, while being incorporated into integrated circuits. Specifically, chalcogenide materials may be switched from a generally amorphous state to a generally crystalline state, or to an intermediate state there between, through the application of a switching current. Chalcogenide materials have greater resistances in the amorphous state than they have in the crystalline state. Thus, the resistance of the chalcogenide material may be set to represent or encode specific data to be stored. Once the data has been set in the form of a varying resistance level, resistances of the chalcogenide material may later be measured, without altering the data, in order to read the data that was stored.
[0009] Regarding the storage of binary code, chalcogenide materials may be configured to store either high or low resistive states, corresponding to logic "1" and logic "0" values, respectively. In addition, they may be used to store analog information by storing a resistive state along a spectrum of continuous resistive states. Chalcogenide materials are also fast and consume very little electrical current. Specifically, they are capable of being repeatedly switched between different resistive states within nanoseconds while consuming only picojoules of electrical energy. Another advantage of chalcogenide materials is that they are nonvolatile, being capable of retaining their resistive state for extended periods of time without the need for continuous power.
[0010] Methods of making and using chalcogenide materials to form chalcogenide memory cells are disclosed in U.S. Pat. No. 5,687,112 to Ovshinsky; U.S. Pat. No. 5,789,277 to Zahorik et al.; U.S. Pat. No. 5,837,564 to Sandhu et al.; U.S. Pat. No. 5,879,955 to Gonzalez et al.; U.S. Pat. No. 6,031,287 to Harshfield; U.S. Pat. No. 6,104,038 to Gonzalez et al.; U.S. Pat. No. 6,111,264 to Wolstenholme et al.; U.S. Pat. No. 6,147,395 to Gilgen; and U.S. Pat. No. 6,150,253 to Doan et al., all of which are hereby incorporated by reference in their entireties. As set fourth in the prior art, a typical chalcogenide memory cell will comprise a storage region which may be adjusted between an amorphous and a crystalline phase state. A current pulse, of only a few picojoules of energy having a current density between about 105 and 107 amperes per square centimeter, may be used to set the phase state of the storage region. This electrical current, which can become quite significant when millions or more memory cells are being used, may be reduced with the creation of smaller storage regions. In addition, smaller storage regions would allow for a greater density of memory cells to be created, thereby enhancing the commercial value of chalcogenide memory cells.
[0011] While advantages of smaller storage regions for chalcogenide memory cells are suspected, improved designs and manufacturing techniques are still needed to further reduce their size. The present invention is directed to overcoming, or at least reducing the affects of, one or more of the problems set forth above.
[0012] The present invention addresses the needs of the prior art by providing, in accordance with one or more aspects of the present invention, an improved memory cell structure and method for creating the memory cell structure. The different embodiments of the invention may include one or more of the following objectives, but may not necessarily include them all. One objective of the invention is to produce a non-volatile chalcogenide alloy memory cell having a very small data storage region. Another object is to produce a chalcogenide alloy memory cell where the storage region size is not limited by current photolithography resolution. Another object is to produce a chalcogenide alloy memory cell that can readily be produced using conventional integrated circuit processes. Another object is to produce a chalcogenide alloy memory cell wherein the thickness of an electrode can be used to control the contact area between the electrode and a chalcogenide alloy structure, and, accordingly, small pores are not required. Another object is to produce a chalcogenide alloy memory cell where program currents are injected into a side wall of a chalcogenide alloy structure. Another object is to produce a chalcogenide alloy memory cell with increased memory cell density. Another object is to produce a chalcogenide alloy memory cell with decreased power consumption requirements. Any feature or combination of features described herein are included within the scope of the present invention, provided that the features included in any such combination are not mutually inconsistent as will be apparent from the context, this specification, and the knowledge of one of ordinary skill in the art.
[0013] The present invention relates to a particular arrangement of materials used to produce a chalcogenide alloy memory cell and a method for manufacturing the memory cell. Millions of these chalcogenide alloy memory cells may be created in a memory matrix to achieve one or more of the stated objectives. Each memory cell has a chalcogenide alloy structure having a side wall juxtaposed against a side wall of an electrode. This design permits a storage region within the chalcogenide alloy structure to be created in the area juxtaposed against the electrode. One of the advantages of the invention is that conventional integrated circuit processing techniques allow for very tight and repeatable control in manufacturing very thin electrodes. The precision manufacturing process of the electrodes allows for the creation of uniform storage regions within each memory cell across the entire memory matrix.
[0014] In a preferred embodiment, the thickness of the electrode is specifically controlled using chemical mechanical polishing (CMP) or is controlled only as a function of the deposited thin film thickness. For example, an electrode may be deposited by chemical vapor deposition or other known deposition processes over an insulating layer and into an opening etched into the insulating layer. CMP may be used to remove material from the insulating layer and the electrode until the desired thickness of the electrode has been achieved. Optical or other metrology instruments may be used to verify the thickness either in-situ or after the completion of the CMP step.
[0015] The invention also describes a method for reading and writing to a particular memory cell within a memory matrix. Each memory cell is positioned above one of a plurality of address rows and below one of a plurality of address columns. The rows and columns are preferably perpendicular to one another and in their own horizontal planes. The memory cells are thus positioned between the planes containing the rows and columns and at the intersecting points of the rows and columns if the rows and columns were in the same plane. This allows each memory cell to be addressed by a unique combination of one address row and one address column. The address rows or columns may be formed, as is known in the art, by depositing conductive materials into trenches etched into an insulating layer.
[0016] A contact may be created for each memory cell to provide a connection between the address rows and the electrodes. The contact may be comprised of a diode, connected in series with the contact, to thereby facilitate electrical isolation the memory cells from one other. Electrically isolating the memory cells insures that during an operation on a particular memory cell, the data contained within the remaining memory cells will not be corrupted by the operation.
[0017] In another embodiment, a computer may be used to read and write data to particular memory cells within a memory matrix. The computer may, through the use of other integrated circuits and address rows and columns, connect a power source to a selected memory cell. The power source drives a current through the memory cell sufficient to set a desired physical state (crystalline, amorphous or somewhere therebetween) in the storage region of the chalcogenide alloy material. The state of the chalcogenide alloy material will remain constant without additional power consumption until another current is driven through the storage region. The computer can read the data in the memory cell by connecting an ohm meter (or other circuitry that can detect different resistance levels) to the memory cell and detecting the physical state of the chalcogenide material by its resistance. Other types of measurements, using other types of metrology instruments, may also be made on the chalcogenide material to detect different physical states of the chalcogenide alloy material.
[0018] Additional advantages and aspects of the present invention are apparent in the following detailed description and claims. It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
[0019] Various other objects, features and attendant advantages of the present invention will become fully appreciated as the same becomes better understood when considered in conjunction with the accompanying drawings, in which like reference characters designate the same or similar parts throughout the several views, and wherein:
[0020]FIG. 1 is a magnified cross-sectional view of a first dielectric layer that has been deposited over a wafer;
[0021]FIG. 2 is a magnified cross-sectional view of the wafer in FIG. 1 after a first conductive layer has been deposited in trenches formed in the first dielectric layer;
[0022]FIG. 3 is a magnified plan view of the wafer in FIG. 2 illustrating address rows separated by dielectric material;
[0023]FIG. 4 is a magnified cross-sectional view of the wafer in FIG. 3 after a second dielectric layer has been deposited over the wafer;
[0024]FIG. 5 is a magnified cross-sectional view of the wafer in FIG. 4 after a first opening has been etched into the second dielectric layer and a conductive material has been deposited into the first opening to form a contact;
[0025]FIG. 6 is a magnified cross-sectional view of the wafer in FIG. 5 after a third dielectric layer has been deposited over the wafer;
[0026]FIG. 7 is a magnified cross-sectional view of the wafer in FIG. 6 after a second opening has been etched into the third dielectric layer and a conductive material has been deposited into the second opening to form an electrode;
[0027]FIG. 8 is a magnified cross-sectional view of the wafer in FIG. 7 after a fourth dielectric layer has been deposited over the wafer;
[0028]FIG. 9 is a magnified cross-sectional view of the wafer in FIG. 8 after a third opening has been etched into the fourth dielectric layer and a phase changing material has been deposited into the third opening to form a chalcogenide alloy structure;
[0029]FIG. 10 is a magnified cross-sectional view of the wafer in FIG. 9 after a second conductive layer has been deposited;
[0030]FIG. 11 is a magnified plan view of the wafer in FIG. 10 illustrating address columns separated by dielectric material;
[0031]FIG. 12 is a magnified plan view illustrating the direction of a possible current flow direction of the present invention;
[0032]FIG. 13 is a functional block diagram of a system for reading and writing data to selected ones of the memory cells within a memory matrix; and
[0033]FIG. 14 is a flow chart of a method for producing a chalcogenide memory cell according to one embodiment of the present invention.
[0034] Reference will now be made in detail to the presently preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts. It should be noted that the drawings are in greatly simplified form and are not to precise scale. It should be noted that the drawings are in simplified form and are not to precise scale. In reference to the disclosure herein, for purposes of convenience and clarity only, directional terms, such as, top, bottom, left, right, up, down, over, above, below, beneath, rear, and front, are used with respect to the accompanying drawings. Such directional terms should not be construed to limit the scope of the invention in any manner. In the following description, numerous specific details are set forth illustrating Applicant's best mode for practicing the invention and enabling one of ordinary skill in the art to make and use the invention. It will be understood, however, to one of ordinary skill in the art that the present invention may be practiced in certain applications without these specific details. Thus, the illustrated embodiments set forth herein are presented by way of example and not by way of limitation.
[0035] The intent of the following detailed description is to describe how to make and use the preferred embodiments, along with exemplary alternatives, of the invention. However, the scope of the invention is defined by the appended claims. Preferred embodiments for the chalcogenide alloy memory cells and methods for making the memory cells will now be described. In certain instances, well-known machines and process steps have not been illustrated or described in particular detail in order to avoid unnecessarily obscuring the present invention.
[0036] A flowchart illustrating a method for creating a matrix of chalcogenide memory cells according to the present invention is shown in FIG. 14. FIGS. 1-11 illustrate possible stages of a memory cell during the manufacturing process for the memory matrix. FIG. 1 illustrates a substrate 100 having a first deposited thin film of a dielectric material 101. Although the substrate 100 preferably comprises a silicon substrate, in alternative embodiments the substrate can comprise materials such as gallium nitride (GaN), gallium arsenide (GaAs), or other materials commonly recognized as suitable semiconductor materials to those skilled in the art. Initially, the substrate 100 is prepared prior to the dielectric layer 101 being formed using conventional deposition techniques, such as by sputtering, physical vapor deposition (PVD) or chemical vapor deposition (CVD). The dielectric layer 101 may comprise, for example, boron and phosphorous doped silicon glass (BPSG), silicon dioxide or silicon nitride.
[0037] A plurality of address rows comprising conductive material may be created in the first dielectric layer 101 using known semiconductor processing steps to complete step 1500. For example, a thin film of photoresist may be applied (e.g., spun) over the first dielectric material 101. A mask photolithography process may be used to harden (negative photoresist) or soften (positive) the photoresist, depending on the type of photoresist used, so that the photoresist adheres only over areas between designated trench locations. As an example, the wafer can be placed into a stepper (photolithography tool for patterning wafers) where it is aligned to a mask and exposed to ultra violet (UV) radiation. The mask may only be large enough to cover a small portion of the wafer, in which case the stepper steps the wafer through many quadrants, each of them being exposed in turn, until the entire or desired portion of wafer has been exposed to UV light. A cleaning step may be used implementing a chemical bath (developer) to dissolve the softened photoresist in areas designated for trenches while leaving hardened photoresist in areas between designated trenches, thereby yielding a patterned photoresist.
[0038] The patterned photoresist allows for the trenches to be etched into the exposed dielectric material 101 using conventional etching techniques. For example, by controlling the concentration and etch time, CHF3 may be used to anisotropically etch portions of the dielectric material 101 not protected by photoresist to thereby form trenches. The above process may also be used to etch openings into dielectric layers as is known in the art. While a specific etching process has been described, other conventional etching processes may also be used for etching these trenches and for etching other later described trenches and openings during the manufacturing process of the present invention.
[0039] A conductive material 200, such as carbon, aluminum, titanium, tungsten, or copper, along with combinations and alloys of these materials, such as aluminum copper, titanium nitride and titanium tungsten, can then be deposited over the dielectric layer 101 and into the trenches, using conventional means for depositing such materials such as PVD, CVD or sputtering. Chemical mechanical planarization (CMP) may be used to remove excess conductive material 200 deposited onto the first dielectric layer 101 thereby leaving the conductive material 200 only in the trenches as shown in FIG. 3. As is well-known to those having skill in the semiconductor processing art, CMP comprises an abrasive process performed on oxides and conductive materials for polishing the surfaces of the targeted objects. For example, chemical slurries can be used in combination with fine-grinding circular movements to reduce thicknesses of and planarize surfaces. The surfaces and thin structures which can be generated by CMP can have particular relevance in the context of the processing of, for example, the electrodes 700, as set forth below. In the instant application, CMP may be used to reduce the thickness of the dielectric layer 101 and conductive materials 200 so that the combined layer of material is at a predetermined thickness. The above-described preferred embodiment thus creates rows 200 for individually accessing each memory cell.
[0040] Alternative methods and materials may be substituted to simulate the function of the address rows 200. For example, a functional equivalent to the address rows 200 may be obtained by heavily doping N+ material into areas designated for the address rows 200 on a P-type substrate 100. Other known doping steps may also be implemented to improve the conductivity of the doped material in the address row areas.
[0041] A second dielectric thin film 400 may be deposited over the plurality of address rows 200 as illustrated in FIG. 4. The same materials and deposition techniques used to form the first dielectric layer 101 may also be used to form the second dielectric layer 400. A plurality of openings may be etched into the dielectric layer 400 using conventional etching techniques. The openings are positioned in rows and columns thereby forming a matrix pattern. The openings are also positioned over, and are etched deep enough to expose, the address rows 200. Contacts 500, as shown in FIG. 5, are created in the openings, as stated in step 1501, by depositing one or more layers, comprising one or more conductive materials, into the openings. For example, tungsten or polysilicon may be deposited into the openings using conventional deposition techniques. CMP may be used to remove excess conductive material from the second dielectric layer 400 and provide a flat planar top surface for the contacts 500.
[0042] In an alternative embodiment, each contact 500 comprises a diode. The diode electrically isolates its associated memory cell, the structure of which is set forth below, so that during an operation on one memory cell the remaining memory cells are electrically protected. This structure can prevent data contained in non-accessed memory cells from being accidentally corrupted during reading or writing to an accessed memory cell. Contacts 500 comprising diodes may be created, for example, by depositing a layer of P+ doped polysilicon followed by depositing a layer of N doped polysilicon into the openings as is well known to those skilled in the art.
[0043] Referring now to FIGS. 6, 7 and 14, a plurality of electrodes is created with each electrode 700 formed overlaying a corresponding contact 500 as stated in step 1502. The first step in forming the electrodes 700 is to deposit a third dielectric layer 600 over the previously deposited second dielectric layer 400 and contacts 500. The same materials and deposition techniques used to form the first dielectric layer 100 can be used to form the third dielectric layer 600 for the resulting structure shown in FIG. 6. Openings may then be aligned and etched into the fourth dielectric layer 600 so that each opening exposes a top surface of a corresponding one of the contacts 500 as shown in FIG. 7. A conductive material can then be deposited over the fourth dielectric layer 600 to conform to and fill the openings. CMP may be used to remove excess conductive material on the fourth dielectric layer 600, thereby leaving the remaining conductive material only in the openings to form electrodes 700.
[0044] In accordance with a presently preferred embodiment, the electrodes 700 may be formed to a desired thickness by continuing the CMP process and removing material from the fourth dielectric layer 600 and the electrodes 700 until the desired thickness for the electrodes 700 is achieved. The electrodes 700 are preferably formed to have thicknesses ranging from about 10 to about 2000 Angstroms and, more preferably, are constructed to be about 500 Angstroms thick. The electrodes 700 are also preferably about 1000 Angstroms wide, but in alternative embodiments may have widths ranging from about 1000 to about 4000. The CMP process may thus be used for forming electrodes 700 into structures having very thin vertical side walls with very tight tolerances. The thickness of electrodes 700 is not only controlled by the CMP process, but also by the thickness of dielectric 600.
[0045] In accordance with an aspect of the present invention the thickness of the electrodes 700 c a n be an important factor in determining the contact areas of the electrodes 700 with the later-deposited chalcogenide alloy material. The contact area between each electrode 700 and the corresponding chalcogenide alloy material, also known as the pore size, determines the size of the storage region within the memory cell. Consequently, reducing the size of the contact areas can advantageously decrease power consumption, and increase manufacturing densities, switching-time speeds and sensitivities of the resulting chalcogenide alloy memory devices.
[0046] Referring to FIGS. 8, 9 and 14, a process for fabricating a chalcogenide alloy structure 900 juxtaposed against an electrode 700 will now be described in association with step 1503. This fabrication is accomplished by depositing a fourth dielectric layer 800 over both the third dielectric layer 600 and the electrodes 700. The same materials and deposition techniques used to form the first dielectric layer 100 may also be used to form the fourth dielectric layer 800. As can be seen from FIG. 8, the fourth dielectric layer 800 serves to electrically isolate the electrodes 700 from one another and, furthermore, tends to provide structural support to the memory cell once its construction has been completed.
[0047] With particular reference to FIG. 9, a plurality of openings is then etched into the fourth dielectric layer 800 and partial electrodes 700, wherein each opening is positioned with an alignment and depth sufficient to expose a vertical side wall of a corresponding electrode 700, using conventional etching techniques. In a preferred embodiment, a portion of each vertical side walls extends into a corresponding opening. Each of the openings may be about 2000 to about 500 Angstroms wide. Chalcogenide alloy material 900 is then deposited over the fourth dielectric layer 800 and into the etched openings on the side wall. The chalcogenide alloy material 900 fills the openings, thereby establishing contacts with vertical side walls of the electrodes 700. The chalcogenide alloy material is preferably shaped to have a thickness ranging from about 10 to about 1000 Angstroms thick.
[0048] The chalcogenide alloy material 900 and a vertical side wall of each electrode 700 are thus manufactured juxtaposed against one another. The resulting contact area between the elements 700 and 900 forms a storage region 901 for each chalcogenide memory cell formed. The storage regions 901 may be made very small, since the side walls of the electrodes 700 produced by the inventive method may be made smaller than the resolution of current photolithography processes normally used to produce the contact areas for chalcogenide memory cells.
[0049] The chalcogenide alloy material 900 may comprise, for example, one or more of tellurium, antimony, germanium, selenium, bismuth, lead, strontium, arsenic, sulfur, silicon, phosphorous, nickel, and oxygen. Exemplary compositions for the chalcogenide alloy material 900 include average concentrations of Te in the amorphous state well below 70%, typically below about 60% and ranging in general from as low as about 23% up to about 56% Te and most preferably to about 48% to 56% Te. Concentrations of Ge are typically above about 15% and range from a low of about 17% to about 44% average in the high resistance state, remaining generally below 50% Ge, with the remainder of the principal constituent elements in this class being Sb. The percentages given are atomic percentages which total 100% of the atoms of the constituent elements. A preferred chalcogenide alloy material 900 uses a minimal amount of energy and rapidly switches between states. Chalcogenide alloys known in the art that use only picojoules to switch between states within nanoseconds, for example, may be implemented. Alloys that may be particularly advantageous include tellurium, antimony, and germanium having approximately 55 to 85 percent tellurium and 15 to 25 percent germanium, such as Te6Ge22Sb22. Another may comprise Ge2Sb2Te5 chalcogenide alloy. The particular alloy selected should be able to alter its state between an amorphous structure and a crystalline structure, or between various crystalline structures, wherein each structure has a different level of electrical resistance. The chalcogenide alloy may be advantageously selected based on its particular characteristics, including, among other things, energy requirements and time required for switching between states.
[0050] Referring to FIGS. 10-11 and 14, a plurality of horizontal columns of conductive material, i.e. address columns 1100, can be created to complete step 1504. The address columns 1100 are preferably disposed above, on a horizontal plane with, and perpendicularly aligned with the earlier created address rows 200. The address columns 1100 and address rows 200 operate together to facilitate an individual selection of every memory cell based on a unique pairing of one address row 200 and one address column 1100.
[0051] A conductive material 1100 can then be deposited over the chalcogenide alloy material 900 and into the trenches. CMP may be used to remove excess conductive material 1100 and chalcogenide alloy material 900 above the dielectric layer 800, thereby leaving the conductive material 1100 in the trenches as shown in FIGS. 10 and 11. This process completes the formation of the address columns 1100. In one exemplary embodiment, the contact 500 can comprise polysilicon; the dielectric layers above the electrode 700 can comprise silicon dioxide, and the electrode above the chalcogenide memory cell can comprise an aluminum copper material. In another exemplary embodiment, the two electrodes contacting the chalcogenide memory cell can comprise carbon, and in still another embodiment these two electrodes can be formed into one or both of the address row 200 and address column 1100. In certain embodiments, the electrodes may comprise molybdenum and/or titanium nitride.
[0052] The memory matrix created by the described process includes a plurality of memory cells arranged in generally orthogonally arranged rows and columns. The memory cells in each row are coupled together by a respective address row 200, and the memory cells in each column are coupled together by a respective address column 1100. In the illustrated embodiment, each memory cell includes a contact 500 coupled to a respective address row 200, and each memory cell includes a chalcogenide alloy structure in electrical contact with an address column 1100. The address rows 200 and the address columns 100 may collectively be referred to as address lines. The described structure allows each memory cell to be accessed based on a unique pairing of one address row 200 and one address column 1100. These address lines may be connected to periphery circuitry, as illustrated for example in FIG. 13, so that each of the memory cells can be accessed for the storage and retrieval of data.
[0053] The plan view of FIG. 12 illustrates that the current flow through the storage area of the memory cell travels along a substantially horizontal plane, with some directional movement from a plane of the electrode 700 to a plane of the address column 1100 in the illustrated embodiment. This current flow path is made possible by passing the current from a side wall of the electrode 700 to a side wall of the chalcogenide alloy structure 900. The dimensions of the side walls for the electrodes 700 may be constructed very small and of a uniform thickness. The uniform thickness dimensions can improve the reliability of the memory cells, and the thin side walls can allow for low current and high density memory cells to be formed.
[0054]FIG. 13 illustrates a simplified functional block diagram architecture in which a method of reading and writing data to a chalcogenide alloy memory cell matrix can be practiced according to one aspect of the invention. A memory matrix 1405 may be manufactured according to the previously described manufacturing process. While a specific method for producing the memory matrix 1405 has been provided, those skilled in the art will recognize that the same or functionally similar structures and arrangements may be created using various other integrated circuit manufacturing techniques. The memory matrix 1405 is shown with rows R1-R6 and columns C1-C7. Only six rows and seven columns are illustrated to simplify the drawing and the operation of the memory matrix 1405. The six rows and seven columns may be paired in 42 unique combinations allowing for 42 memory cells to be addressed in the memory matrix 1405 as shown. Commercial memory matrixes may comprise, for example, more than one million memory cells and, thus, may require more than one thousand rows and more than one thousand columns.
[0055] The row address 1403 circuit electrically connects the line RX to one, and only one, of the rows R1-R6 and the column address 1404 circuit electrically connects the line CX to one, and only one, of the columns C1-C7. The row address 1403 and column address 1404 circuits insure that only one memory cell in the memory matrix 1405 is addressed at a time. The row address 1403 and column address 1404 may comprise integrated circuits, such as one-to-many circuits, that are well known in the art. The row address 1403 and column address 1404, although illustrated in different boxes, are preferably integrated circuits manufactured on the same substrate with the memory matrix 1405.
[0056] A read/write select circuit 1402 determines whether lines RX1 and CX1, from a power supply 1400, or lines RX2 and CX2, from an ohm meter 1401, are connected to lines RX and CX. The read/write select circuit 1402 may also be an integrated circuit manufactured on the same substrate with the memory matrix 1405. Combining all the functions on one substrate can save manufacturing time and lower the cost of producing the product.
[0057] Connecting lines RX1 and CX1 to corresponding lines RX and CX connects the power supply 1400 to a single memory cell in the memory matrix 1405. The memory matrix 1405 does not require very much power so the power supply 1400 does not have to be very robust. The power supply 1400 may comprise a current source or other known means of supplying a very controlled, but small amount of current to a memory cell. Once connected to a memory cell via the read/write select 1402, row address 1403, and column address 1404, the power supply 1400 may then write data to a particular memory cell. For example, a relatively high or low current may be directed through the particular memory cell thereby changing the state of the chalcogenide alloy material to a crystalline or amorphous state respectively.
[0058] Connecting lines RX2 and CX2 to corresponding lines RX and CX connects the ohm meter 1401 to a single memory cell in the memory matrix 1405. The ohm meter may then read the resistance, and thus the data in the memory cell. For example, a relatively low or high resistance may indicate a corresponding crystalline or amorphous state. The state of the material, crystalline, amorphous or somewhere in between, may be used to represent binary or analog data. While an ohm meter 1401 has been illustrated in the diagram, those skilled in the art will recognize that other instruments or techniques may be used to detect the state of the chalcogenide material within each memory cell. In engineering such a circuit, it should be kept in mind that various parameters can be adjusted according to design parameters, including the electrode and chalcogenide dimensions and compositions, post deposition anneal processes, signal pulse duration, impurities such as oxygen present in the composition, crystallite size, and signal pulse waveform shape. As will be understood by those skilled in the art, these and other parameters can be adjusted to control, for example, the dynamic ranges of the resistances, the end-point resistances of the dynamic ranges, and the voltages required to set the chalcogenide alloy cells at such resistances.
[0059] A computer 1406 is preferably integrated into the system to allow the computer 1406 to read data from, or write data to, a specific memory cell in the memory matrix 1405. The computer 1406 may be connected to the power supply 1400 so that the computer 1406 can control the output of the power supply 1400 and thus control the data written to a memory cell in the memory matrix 1405. In an exemplary embodiment, a relatively low voltage, in the range of between 1 and 5 V, is required to program the chalcogenide material.
[0060] The computer 1406 may be connected to an ohm meter 1401, or circuits able to detect different resistive states, so that the computer 1406 can read the resistance and thus the data from a memory cell in the memory matrix 1405. Once the state of the chalcogenide material has been set by an appropriate programming voltage, the state does not change until another programming voltage is applied. Therefore, once the chalcogenide material has been programmed, a low voltage may be applied to the chalcogenide material to determine its resistance without changing its crystalline or amorphous state.
[0061] The computer 1406 may be connected to the read/write select 1402 to allow the computer 1406 to select between reading data from, or writing data to, a memory cell in the memory matrix 1405. The computer 1406 may also be connected to the row address 1403 and column address 1404 so the computer can select a specific row and a specific column, thereby selecting a specific memory cell to access. The computer 1406 thus has the capability to read from or write data to any memory cell in the memory matrix 1405.
[0062] It should be noted that while a system has been shown that reads and writes data to a single bit or memory cell at a time in a memory matrix, the shown system may be duplicated many times, preferably even on the same substrate. Such a megasystem would be able to read or write multiple bits of data at the same time equal to the number of times the system was duplicated, thereby greatly expanding the capabilities of the system.
[0063] In view of the foregoing, it will be understood by those skilled in the art that the methods of the present invention can facilitate formation of chalcogenide memory cells having improved characteristics in relation to those of the prior art. The above-described embodiments have been provided by way of example, and the present invention is not limited to these examples. Multiple variations and modification to the disclosed embodiments will occur, to the extent not mutually exclusive, to those skilled in the art upon consideration of the foregoing description. For example, while the electrical resistivity of chalcogenide alloy materials was discussed, the state of a state phase-changeable material may also be detected by measuring the electrical conductivity, optical transmissivity, optical absorption, optical refraction, optical reflectivity, or a combination of these properties. Furthermore, although described in the context of a memory cell matrix, the chalcogenide memory cells of the present invention are not limited to such configurations and applications. Other constructions and applications can be embodied, so long as the cells are constructed consistent with the recitations broadly set forth in the following claims. Such variations and modifications, however, fall well within the scope of the present invention as set forth in the following claims.
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Brad Pitt and Catherine Zeta-Jones, together? Well, onscreen, at least. The two sexy stars make a love connection in the upcoming caper sequel, Ocean's Twelve (opening Dec. 10). "Apparently there was some ambiguity about (my character's) sexuality in the first one, and we really wanted to clear that up," says Pitt of the romantic pairing. The two so enjoyed working together that he hopes they can find another project. "I'm thinking a musical. Interpretive dance, that's kind of my specialty. I haven't unleashed that on the world yet," jokes Pitt. "The great thing about Catherine is that there is this great beauty and elegance, but at the same time she'll drink anyone under the table. So (the chemistry) was pretty much automatic."
Cause Celeb
Thin-again Bridget Jones star Renée Zellweger did her part recently to make sure others have enough to eat when she joined up with Barbara Walters, Paula Zahn, Kathleen Turner and Ivana Trump at a luncheon benefiting Citymeals-On-Wheels. "I have a lot of affection for this charity," Zellweger tells us of the organization, which provides hand-delivered meals for New York City's homebound elderly. "It's such an easy way to make a contribution that is substantial and can be felt immediately. I hope that people feel inspired because it's such an easy thing to do." The event, which raised more than $850,000, was co-anchored by Zahn and her daughter, Haley Cohen. Zahn says she remembers friends Gloria Steinem and Liz Smith encouraging her to come to the program about seven years ago and hasn't missed one since. "The most extraordinary thing about this program is, not only are we feeding people, but a lot of the people who receive the meals have no contact with any other human being than those who deliver their meals."
Just for Laughs
Drew Carey was quite the snark-meister when he took the stage at Carnegie Hall during the recent New York Comedy Festival. During his brief opening monologue, Carey talked about what a "s---hole" it was backstage and how the hangers in his room were sealed at the top so they couldn't be stolen. "I guess Leonard Bernstein used to steal wire hangers," Carey joked. Regarding the angioplasty surgery he had some years ago, Carey said, "It was the same thing Dick Cheney had, but they left my heart in."
Taking It Off
Who says stars can't be losers? In the "tradition" of NBC's The Biggest Loser, celebs such as plus-size model Mia Tyler, Living Single star Kim Coles, "Snapple Lady" Wendy Kaufman, Divorce Court Judge Mablean Ephriam, actor Joe Gannescolli (Vito on The Sopranos) and '80s rapper Biz Markie will submit themselves to weigh-ins and challenges on VH1's Celebrity Fit Club, debuting in January. Tyler says she intends to keep her curvy figure, and just wants to lose 20 pounds. "I love being chunky, that's my job," she says. Also, she and her husband, Papa Roach drummer Dave Buckner, are trying to have a baby. "We were going to wait but we don't get to see each other all the time," she says. Tyler also says she is looking forward to being an aunt to sister Liv's baby, due at the end of December.
By ANNE MARIE CRUZ, BRIANA HAAS and BRENDA RODRIGUEZ
Brad Clears Things Up
Alex Berliner/BEI

subset: commoncrawl


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Local Roundup: KVA boys advance in conference tourney
No. 3 Kerr-Vance defeated No. 6 Parrott Academy, 67-53, in Tuesday's 2-A Eastern Plains Independent Conference tourney first-round boys game.
The Spartans advanced to meet No. 2 Rocky Mount Academy Friday at 8:30 p.m. at KVA. The Spartans lost both regular season meetings against RMA. The Eagles advanced to the semifinal matchup with a win over No. 7 Faith Christian.
Brandon Dickerson led KVA Tuesday with 20 points and six assists.
"He really controlled the game the whole time he was in there," said Spartan coach Dave Carrier. "He made great decisions. He was the best player on the court tonight."
R.J. Hunt added 13 points and Derrius Perry had 12.
Lady Spartans eliminated in Raleigh
The Kerr-Vance varsity girls were eliminated from the 2-A Eastern Plains Independent Conference Tournament Tuesday with a 44-24 loss at St. David's.
The seventh-seeded Spartans trailed the No. 2 Warriors 18-8 at halftime.
"In my opinion, they have the best man-to-man defense in the conference," said KVA coach Brian Russell. "They really shut us down."
Rachel Ross led the Spartans with 10 points.
KVA finished 10-14 overall in Russell's first season as head coach.
"It was a really good season," said Russell. "It was fun and it was a pleasure to coach a great group of young ladies."
Northern boys fall in close match at Chapel Hill
Northern Vance held Chapel Hill without a field goal in the fourth quarter Tuesday, but the Tigers held on for a 41-37 win.
Chapel Hill, tied atop the 3-A Carolina Standings with J.F. Webb, scored each of its 14 fourth quarter points at the free throw line.
The Vikings need a win Friday at Orange to stay alive in the 3-A state playoff hunt.
Northern coach Wilton Baskett said Tuesday's game was played at a much slower pace than in Chapel Hill's 59-48 win in Henderson last week.
"Both teams were being very selective with their shots," said Baskett. "It was a slow-paced, deliberate game by both teams."
Le'Darius Brandon led the Vikings with 12 points and Tavin Moore had 10.
Lady Colts' season ends at Cresset
For the third time this season, Crossroads Christian played Cresset Christian to a close game, but couldn't come out with a win.
No. 2 Cresset eliminated No. 7 Crossroads from the 1-A Carolina Christian Conference Tournament Tuesday with a 56-51 overtime win. The Colts lost the three meetings with Cresset this season by a combined 11 points.
The game was tied at 45 at the end of regulation.
Jessi Hayes led Crossroads with 27 points, 12 rebounds, seven steals, and five assists. Hayes leaves as the Colts' all-time leading scorer (1,058 points), averaging 19.5 points, 8.5 rebounds and 5.1 steals this season.
Lizzy Long had eight points and nine rebounds Tuesday. Also scoring for Crossroads, which finished 9-14 on the season, were Caroline May (seven points), Michaela Nicholas (five points), Ali Arnold (five points), and Ashton Hayes (two points).


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It was 'A Good Thanksgiving'
Felicia Haney | 12/4/2013, 9:13 a.m.
Cleveland Cavaliers Jarrett Jack and C.J. Miles teamed up with Cavs DJ Steph Floss – one half of the Good Guys – to bring Cleveland a Good Thanksgiving. The Good Guys, DJ Steph Floss and DJ Meel, did a good service by providing 500 turkeys to Clevelanders in need. In true "New Jack City" fashion, the turkeys were distributed at two locations – B&M Bar-B-Que, 3965 Lee Road in Cleveland, and Next, 4779 Northfield Road – via a U-HAUL truck. Sliding door comes open and turkeys came flying out assembly line style. Although distribution time was scheduled between 2-4 p.m. at the first location and 5-6 p.m. at the second location, the lines started to form around noon full of hopeful turkey take homers waiting in the 20-something-odd-degree temperature.
Fortunately for participants, there was enough hot chocolate to go around. And even more fortunate for this reporter, I was able to snag the last cup! I didn't manage to get my hands on one of those turkeys, but I did speak with someone who did. Bearing a big grin and toting his turkey back to the car, I caught up with Jarvis Noble after hearing him utter aloud…"man, I lucked up on a turkey." Jarvis is new to the Cleveland area out of Chicago and was looking forward to enjoying his "welcome to Cleveland" present on Turkey Day. A gift he happened to stumble upon just driving by. "I knew what was happening when I got off of the freeway and saw everyone in line," Jarvis said. "I needed a turkey too, so I decided to pull over and join the crowd."
Good decision Jarvis. The Next location where he received his turkey only handed out 50 birds due to the overwhelming response at B&M two hours prior where 450 turkeys were distributed. Lucky for Jarvis he was in the right place at the right time to get blessed by some of the city's good guys. When asked how he planned to prepare his turkey for the big day, Jarvis replied, "I'm going to put a whole bunch of seasoning on it and let it slow grind in the oven on about 300." Although the Chi-Town native has a few family members here locally, the self-proclaimed loner said he planned to spend his first Thanksgiving in Cleveland at home, alone watching football.
When it was all said and done and all the turkeys were gone, all those who helped make the event possible were treated to dinner at B&M Bar-B-Que's Maple Heights location. Good food provided by good dudes makes for one Good Thanksgiving. Sounds like a recipe for success.


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About Apollo
Apollo has an unsurpassed reputation nationwide and is a leader in Vietnam's rapidly expanding English language and business training market, having won several prestigious awards...
Find us by city...
Why Apollo?
Apollo is the only International House (IH) recognised CELTA trainers in Vietnam. The International House World Organization (IHWO) is a network of language schools worldwide that are committed...
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Working at Apollo
For eleven years I have taught in language schools all over the world: in Thailand, Canada,
Charity May 2011
Hello everyone
It's ben a really busy few months and I want


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My name is Clifford Reese, I am CIA torture whistleblower John Kiriakou's cousin. I was proud to attend the action started by Firedoglake to put pressure on Senate and Congress members to request John be moved to a halfway house near his family.
The day began at the Capitol Cafe the morning of May 9th. I was first joined by Suzanne O'Hatnick from Interfaith Action for Human Rights who has strongly come out against torture and in support of John. We were also with Dr. Lih Young, Todd Wetzelberger, Sarah Damian from GAP and Cayman Kai of Code Pink. Thanks to Sarah and Cayman for tweeting information and photos throughout the day.
It was a small but committed and diverse group, very representative of John's supporters.
We had packets provided to us by Firedoglake with information on John, letters of support by Congressmen Doggett and Moran and John's op-ed from the LA times. For the day we visited 18 Senate Offices and 6 offices in the House.
In most of our visits we talked to front office staff and left our information. We didn't expect to meet with any Senators and Representatives themselves, as most of the staff would tell us "It's Friday". Most of the office staff we talked to seemed to be aware of John's case and were happy to listen to us and take our information. The fact we could show support from Representatives Moran and Doggett helped us a great deal. We got to sit in longer meetings with staff of Senators Susan Collins, Angus King and Elizabeth Warren.
Senator Collins' staff commented she was surprised that House Representatives wrote letters and wasn't sure they could do anything in a DOJ case because of "separation of powers". I reminded her we are not asking to change or reduce his sentence and that halfway house is still punishment which he is eligible for.
Senator Warren's staff briefly came out to talk with us, didn't know much about John's case but listened to us, seemed genuinely concerned and would show the Senator our concerns.
Senators King's staff had a scheduled meeting with us. We got to meet with Dep. Press Secretary Margaret Williams and assistant Jim Catella. They were well prepared to speak. They talked about Senator King's commitment to getting the torture report out. Mr. Catella said though that there were "proper channels" for whistleblowers to follow and mentioned John and Edward Snowden as not following those channels. They knew John's case well and said that in the light of him possibly getting 20+ years for espionage charges, 30 months seemed "lenient". We countered that the nature of the DOJ charges assumed he meant harm to his country where all he did is verify a name known to reporters that was never published. No more than Leon Panetta did as John has pointed out. We insisted it was part of a culture of CIA retribution that continues even now while John is in prison. We said John would be better served being in a halfway house and being able to add to the discussion on the torture report than in prison. They ended up saying they could see our points and would forward the information to the Senator.
Overall I felt it was a good day and am hopeful that John will get some more support on his behalf. I know that many that couldn't be with us in DC made calls to their representatives and I thank them all.


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Now I don't have best the camera but sometimes a moment is just so cute it looks good fuzzy, out of focus and blurry.
Can you Out-Cute This Disneyland Resort Photo?
Now I don't have best the camera but sometimes a moment is just so cute it looks good fuzzy, out of focus and blurry.
Can you Out-Cute This Disneyland Resort Photo?
do you really want me to???? LOL Cause I will.....jk. Cute pic.
Founding member of the BA I LOVE us!!!
That is cute. Kids are so proud of themselves with cameras and now with digital they can take all they want.
Here are two I got some nice comments on from back in March.
I have no idea who these kids are, but it was just a good photo opportunity
I think Frogbertos picture of his little Tadpole and Pluto sitting on the ground has to be the winner!!!
Froggie can you repost it?
All of the photos are adorable, but, this one really is SOOOOOOO darn cute!!!
Cute, but...a lot of those baby duck pix are hard to beat on the ol' cute-o-meter.
"I, not events, have the power to make me happy or unhappy today. I can choose which it shall be. Yesterday is dead, tomorrow hasn't arrived yet. I have just one day, today, and I'm going to be happy in it. "Groucho Marx
Love the one dancing with the Mad Hatter, Frecky! Adorable!!!
Why did Cinderella have to tell her about the Tom Sawyer Island makeover???
Great photos everyone!
We went for President's Day Weekend with our close friends and their 6 month old.
I took these photos while at Ariel's Grotto and thought these were pretty darn cute...
It will be hard to top it, but lets see what I can do.
In 1979 When i first visited Disneyland I was really nervous about meeting Donald. At first I would not approach, but Donald cried so I gave him a kiss on his bill.
My sister and I were very happy.
And in case those 2 can't top it. How about this one? My dad and Cinderella in 1986. She was a real flirt.


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Upgraded to iLife '11 and now iPhoto/iMovie issues galore
Forum noob, but Mac user of 20 years. Please be gentle.
Last night, I finally made the leap to Snow Leopard then iLife '11 on my MacBook Pro (2.16 Ghz Intel Core Duo, with 1 GB 667 MHz RAM). I tried to upgrade to 10.6.6 2X, but both times it failed to expand, so after spending hours with this, I started to settle on 10.6.3.
I was aware of the issue with the new iPhoto, causing it to appear as if one's photos have disappeared. So I made sure to download 9.1 before I opened the new iPhoto. I'd read of no problems with iMovie '11, so I thought that would be fine.
Here's what happening for me. With iMovie, I tried to open old projects, and was unable to. After looking around the forums, I see that '11 is not backwards compatible with '09 (6.0.3). Annoying, but not the end of the world. But I'm still having two major problems.
1. When I open old iMovie Projects, iMovie HD (6.0.3) opens and the movies load as normal. BUT there are no PLAY, FAST FORWARD or REWIND buttons. I can see the first frame of my movie and the clips, but I can't do anything with them. I've found the appropriate plist pref and moving that to the desktop and restarting does nothing.
2. When I open iMovie 9, I can't do anything at all with that. New project is grayed out. Import is grayed out. Again, moving plist does nothing. Nice icon, though.
With iPhoto, I open the new version and no album appears and I can't see any of my photos. I'm not panicked that my pictures are gone, because I've read enough about this and see the pictures still exist. But when I click on them individually, they only open in preview. As with iMovie, movie plist pref does nothing.
In a nutshell, help. I thought by being patient and waiting for everything to get patched I could safely upgrade now and everything was fine. Sadly, that is not the case. I would really appreciate any assistance from people more capable than myself (of which I am sure there many).
try a repair permissions in disk utility. this is usually a source of wierdness going on.
Rob, I appreciate the suggestion.
I tried Disk Utility > Repair permissions. It took about ten minutes, then I restarted. No difference. Do I need to boot from the Snow Leopard disc? Would that make a difference?
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Blackboard Inc. introduced an open enrollment option for CourseSites, letting instructors open registration so any number of students can sign up for courses they are teaching with the free, fully-hosted and supported online system.
Blackboard Inc. introduced an open enrollment option for CourseSites, letting instructors open registration so any number of students can sign up for courses they are teaching with the free, fully-hosted and supported online system.
Think engineers are made in college? Think again.
Calvin Phelps, national chair of the National Society of Black Engineers (NSBE) says engineers are built in the third or fourth grade.
President Obama hopes to bring high-speed wireless Internet to all rural areas in the next five years.
This "Short List" of emerging technologies, trends, and challenges reveals the thought process behind what will make the final full Horizon Report.
Like seemingly everyone else connected to K12 education, vendors that offer student information systems are being called upon to do more with less. Where past generations of these systems focused on nuts and bolts such as time, attendance and behavioral issues, the latest generation has created-and drawn inspiration from-districts' desires for all-in-one solutions that blend finance, HR and student data.
Hatch, a leading provider of technology for early learning, is accepting applications through May 31 for a free pilot program of their mobile technology solution.
Samsung Electronics America Inc. announced the hire of Tod Pike, formerly of Canon USA Inc.
Which products and services make a difference in your district? Nominate your favorite products by the deadline of Sept. 12 to be considered for the Reader's Choice Top 100 Products of 2012.
Meru Networks, Inc. is partnering with Northgate Managed Services to provide state of the art Wi-Fi connectivity to over 350,000 teachers and pupils in 1,200 schools.
Rocky Mountain Microfilm and Imaging is helping an online charter school with more than a dozen locations stay productive and organized with the help of EPSON WorkForce Pro document scanners.
Should students and teachers ever be friends on Facebook? School districts across the country, including the nation's largest, are weighing that question as they seek to balance the risks of inappropriate contact with the academic benefits of social networking.
Pearson announced an agreement with SchoolMessenger to provide customers of PowerSchool student information system with turnkey access to the leading notification solution in K12 education, increasing the flow of information between schools, parents, and staff.
The Power Supply Selector Web app helps installers and equipment wholesalers' sales staff quickly determine the appropriate power supply for fire alarm, video, intrusion and access control systems.
The ASU Skysong Education Innovation Summit has become the can't-miss education innovation event of the year in just the three years since it was founded.
Leader in web and cloud-based educational solutions, ClassLink announces its nomination in four major 2012 CODiE award categories for its LaunchPad solution.


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Trader Joe's Honey Mango Shave
94 reviews
91% would repurchase
Package Quality: 4.1
Price: $
Package Quality: 4.1
Price: $
on 4/17/2015 2:07:00 PM
Age: 19-24
Skin: Normal, Tan, Not Sure
Hair: Blond, Other, Other
Eyes: Brown
I don't know about this being able to help with not getting nicks and prepping your skin for shaving like other reviewers have said because I use Venus Embrace and can't remember the last time I've cut myself. That being said I really do love this product anyways. It smells freakin amazing, I want them to start a body lotion line with this scent, it's to die for. It's creamy not foamy like other shaving "creams" and it leaves my legs ridiculously soft through to the next day (my leg hairs grow quickly lol) but regardless, they feel smooth. I previously had stopped buying shaving cream and used my hair conditioner to shave instead which I thought was the best idea ever until I found this product. This beats anything else for sure.
on 2/11/2015 12:33:00 AM
Age: 19-24
Skin: Combination, Fair, Neutral
Hair: Brunette, Curly, Fine
Eyes: Brown
I am so glad that I read all these reviews and went to buy this product. All my life I've just shaved using whatever soap I had in the shower. Never again! I ADORE this shaving cream!
First of all, it smells absolutely amazing. The packaging is nice, the cap is on the bottom so it's easy to get the product out. The shaving gel has a nice medium consistency that's easy to spread over my skin.
It helped my razor glide so much smoother over my skin. I didn't get any nicks, razor bumps, or irritation like I used to while shaving. My legs were so smooth and moisturized after using this product.
The only con I found is that when using this I need to take more time so clean my razor after each swipe. It seems to clog my razor.
I totally recommend this!
on 2/6/2015 6:10:00 PM
Age: 25-29
Skin: Acne-prone, Fair, Warm
Hair: Blond, Wavy, Medium
Eyes: Blue
Great smelling shaving cream! I use this and so does my husband. It feels smooth, leaves my skin soft, smells great, and has good ingredients.
on 12/17/2014 1:57:00 PM
Age: 30-35
Skin: Acne-prone, Fair-Medium, Neutral
Hair: Brunette, Wavy, Coarse
Eyes: Brown
Smells delicious! Every shower is now a wonderful spa-like experience :). Left my legs super smooth with a really close shave. I used to dread shaving my legs before I tried this; I have sensitive skin and thick hairs = Dry, irritated Itchy skin after shaving.
The Best! shaving cream I've ever used, and does not irritate.This applied to wet skin just makes the razor glide.
The packaging is perfect for conveniently storing in shower.
Trader Joe's has the best bath and beauty products; once I try one I'm usually hooked!
on 11/25/2014 10:33:00 PM
Age: 30-35
Skin: Dry, Fair-Medium, Not Sure
Hair: Brunette, Other, Other
Eyes: Blue
Great shave cream. Long lasting. Nice scent. I like it better than gels and foams.
on 10/20/2014 12:33:00 AM
Age: 36-43
Skin: Dry, Fair, Neutral
Hair: Blond, Straight, Fine
Eyes: Blue
I received this as a gift and I'm glad I did because I probably would've never purchased it. This is a gel cream and a little goes a long way. Provides a smooth shave and I love the scent -- not too strong -- yet very nice. I did seem to go thru this pretty quickly (2 months) so that is the only con.
on 10/13/2014 3:43:00 PM
Age: 25-29
Skin: Acne-prone, Tan, Warm
Hair: Other, Curly, Medium
Eyes: Brown
This has a cream texture and is very moisturizing, inexpensive and has great ingredients. It has a subtle fruity smell
on 9/21/2014 4:39:00 PM
Age: 36-43
Skin: Normal, Medium, Not Sure
Hair: Brown, Other, Other
Eyes: Brown
Men!! This is such a good shaving cream! It smells good too and no bumps.
on 9/13/2014 5:49:00 PM
Age: 30-35
Skin: Sensitive, Fair, Not Sure
Hair: Brunette, Other, Other
Eyes: Blue
HG status, this stuff freaking rules. I noticed that people at Trader Joe's literally buy this stuff by the caseload and for good reason. It smells good, feels good and provides the perfect amount of slip without clogging your razor. Did I mention this stuff is also insanely cheap? Yay!
on 7/20/2014 11:08:00 PM
Age: 30-35
Skin: Combination, Olive, Not Sure
Hair: Brown, Curly, Medium
Eyes: Hazel
HG for sure. I use an epilator pretty regularly, so a lot of the regrowth is very fine. This leads to a lot of breakage. Shaving every once in a while helps keeps legs smooth. I decided to try this cream after reading the reviews... It is the most amazing shave product! After using this, my legs are so smooth and moisturized. I might make shaving my regular means of leg hair removal. Price is ok, I believe it went up recently.
Popular Shave Products
28 Reviews
21 Reviews
94 Reviews
29 Reviews
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Wondering if anyone else read the story also this am in the paper about the Tri-met driver who again kicked someone off her bus because the children were crying?????? This is the same driver who it seems pretty much got away with the horrible beheavor eariler when she kicked off the young mothers with a baby who was crying. I understand she got a leave with no pay that time but obviously was reinstated to do her dirty work another day! I am retired now but I worked for 35 years in a union job so I'm not anti-union, but, this seems to me a case where the union should not continue to defend these kinds of actions by drivers. In most service jobs the customer is right and if a child is crying certainly the parents need a liitle sympathy not a kick off the bus or anywhere else!
OK Sorry remembering the mess that Oden was, (especially since we now see where Durant and OKC is right now) lets hope that this organization has some plan to get some good free agents along with the draft pics. That said maybe we should be saying that with a pray instead of just hoping!
Management of this team is really bad and doesn't seem to get any better from year to year. Most of these guys are young and need to play every day, so why doesn't the team send them down for a few weeks and so maybe they can get their head on straight. If you are in the big leagues you should not stand up there in the batters box and take 3 strikes and not take a swing! How many strike outs in one game should guys be allowed? The pitchers have not been nearly as bad a problem as the hitters coming to bat with men on and strking out!!!!!!! A pitcher makes one bad pitch and then you blame the guy for the game getting out of hand, but many a time he works great for most of the game and can't get any run support. I won't even mention the game with LA where League, the closer?, came in and gave up the win. When a relief pitcher comes in and immediately walks guys, the manager should mention to him, "that wasn't what I put you out here to do, GOT IT??????????????" Getting pretty hard to watch.
Really a neat marriage proposal!! Brings a tear to the eyes of any woman because we also get off on watching a "chich flick". Hope and pray their lives are forever touched with Love and Happiness.
Murder/suicide is the absolute worst offense I can think of. Suicide to such a selfish act and is unforgiveable! Women seem to have so much more compassion in them and men should perhaps try to learn from them. How many others are affected when someone is this selfish? It seems all we can do is pray that someday this won't happen so often.
Wow! interbeav, this is the best blog comments of this whole bunch! This NBA has to long let these prima donna players call the shots and it's time that the coach got the respect he should receive. Fans should also realize that these guys are getting paid just the same as each of us who have a job and should perform their duties as such without so much complaining. This last year, with the ways some players undermined the coach should be absolutely unacceptable in any organization!!!!!!!!!!!!!! Spoiled super stars, or rather some who think they are, should just do their job and shut up!!!!!!!!!! Why? is it that the coach gets all the blame when the players are the ones on the FLOOR supposedly playing the game????????? Anyone doubt how far you would get on the job if you tried to undermine your boss as some of these players did last year? Here's hoping that Allen and crew do as you suggested and check with Sloan about both GM and coach, we sure could stand some good news from these guys for a change!
You know 503 that Batum is a restricted free agent which means the Blazers have a right to cover any offer he receives from any other team. Why let San Antonio have him, why don't the Blazers go out and try to get Parker from them for point guard. This Blazer team really needs a point guard so lets set our sights high! Please Nic stay in Portland, you're one of the only reasons I watch.
It's so very sad to say but I don't feel that we'll ever see the day when religion is absent from politics. Mostly because Repubicans have found it so advantageous to use it is the past. I only wish those hypocritics could remember Jesus and his teachings about the POOR. He would be, I'm afraid, quite disappointed in many of us who declare ourselves Christians! From the beginning of the Obama presidency the Rep. party has had one goal, to make Pres. Obama a one term president so they have never once tried to work in a bipartisn manner in the Congress. Why else would they not give the President any credit for getting Osama Bin Laden?!? He gave credit to all the people, of which there were very many, who were in any way resposible for helping catch and kill Osama, but all the right wing people can say is he does not deserve any credit. Folks, we are all Americans, and should be proud of the feat and give credit when due! In Time magazine a week ago there was a run down on the whole operation and a great read for anyone who is really interested in what really when on. Please, lets all pledge to be open minded on our politics and keep religion in the places of worship for each of us.
To Clackamas Captive, I would like to say AMEN, and I wish I had said all of that!!!!!!! thanks
I do seem to remember the last administration saying you are either with us or against us, and callewd anyone who disagreed on the Iraq war unpatriotic. Also I seem to recall all the to do about color coding the level of fear we as a nation was supposed to feel almost on an everyday basis. Do these conservatives jerks not remember this garbage we were subjected to for most of the 8yrs of these war woning group??? Lies that lead this country into a war of choice with so many of our dear young people killed or wounded and still they want to have the country somehow forget that this happened. They don't seem also tp remember that 9/11 happened on their watch and they had been repeatedly warned of the REAL possibility of this attack. As I recall the Bushies ignored many warnings of intelligence poeple and Richard Clark the terrorism expert from the previous Clinton administration saying Osama bin Laden was making plans to attack our homeland. Now these same jerks ignore any who try to remind them of these past mistakes by Bush/Cheney. Not surprising, consider the source!!!
One of the main problems with PERS as I see it is why are people allowed to retire at such young ages? Do we not realize that people are living much longer these days and retiring in your early 50's with such high retirement benifits is where the problem really is. Most will live into at least their 70's or 80's so they will be collecting a very long time. These people should be able to retire of course but not to collect said retirement benifits until at least the age of 60. in most private sector jobs there is a certain level of age requirement to retiring and receiving benifits from a pension. Just a suggestion that i'm sure will be really hooted at by most public employees!
May not be the same thing but iI for one am sure that the Bulls fans would have loved it if their coach had left Rose on the bench for the last few minutes of the 1st game of the play-offs. Maybe he would have had the injury anyway in the next game but who knows. Now we know they will have a hard time pulling out of the 1st round. Popovich is by far the best coach in the league now that Phil has retired and maybe even before. He has taken a lot of players that perhaps weren't more than satisfactory and made them look awful good. His teams play as a team and he lets them know when he feels they aren't getting it. More power to him and the Spurs, they look awful good and I see them in the Western Finals against OKC.
Has anyone read the Nicholas Kristof article on the Oregonian editorial page this week? It was about exactly this same type of brain injury in our fight men in the Iraq and Afgan wars. Research on the injury called chronic traumatic encephalopathy or CTE is being done by the Veterans adminstration. So many injuries by these fight men are from explosions that rattle the brain and many return with all sorts of conditions and PTSD for which there are still no real answers. This article was very timely and should be read by all. I'm sure it could be found at the Oregonian archives. Cansano did a great job reminding people that though we enjoy seeing these wonderful guys on the field, we owe them respect and sympathy when their personal problems become almost to much for their abilities to cope. RIP Jr. and we will Pray for you and your family!
This last comment from Badass, which to me sounds very accurate, is insulting to anyone but especially a women. I would naturally assume that said badass is a man who would blame a woman he had assaulted by saying she dressed to provocativly and asked for it!!!! This kind of guy is to be feared by most women in a civil society. Hopefully most of us will never run into this creep but who knows maybe there are others out there in our neighborhoods. Ladies Beware!!!!!!!!!
It's amazing to me that anyone would make a comment about how easy it is to make a wide open three! If it were so easy I'm sure we wouldn't have seen so make BRICKS thrown up by some of the guys this past season. Luke has a lot of potential and should be given a chance to stay on the team. I know very little about any of this but I'm a Blazer fan who watches all the games, even the last ones this year, and I think he certainly is better at the three than Jamal and Crawford was a horrible ball hog! He would not pass off even if a man near by was wide open. Team play is the only way to be successful in the NBA. Hope this organization will get it to together and get a GM and a coach soon. But I'm not holding my breath!
Many years ago I remember hearing from my Mom, "there but for the grace of God go I" I often think about that whenever I pass an car accident and feel sorry for those involved. Maybe we all, and especially those in leadership, should remember that. The Republicans say we need to cut all these services for the poor but absolutly continue with the enormous tax cuts for the rich "JOB CREATORS" but where are all the jobs they are supposed to have created? Mostly they are in the military, fighting wars at lesst one of which was a war of choice. Please do not Mr Ryan pretend to be a Christian with this budget plan of yours as that is a true joke!!!!!!!!!! Remember we could be down on our luck as early as tomorrow!
Most of the comments and critics of Pitts about his columns have probaly never "walked a mile" in a black persons shoes. I never have either as I am a retired white women. But I was luckly to have a great set of parents who taught me that "all people are created equal and should be treated that way". Please remember the video of the Rodney King beating and the viciousness of what the police did that night. NOTHING can excuse the riots but they are far easier to understand when you're told justice will prevail and it defintly doesn't end that way. Absolutely parents in all families should be held accountable when their children act out in a way that causes harm to others or to property, but it isn't always the way that justice works. Sometimes there just isn't any justice!
I firmly agree Life with your entry and though I do not live near Steens wilderness area I feel that wind farms are no more unsightly then many other sources of energy. As you say coal extraction is most places is really tough on the landscape and the run-off can be a disaster also. The sight of the wind turbines in the hills of California are really quite magestic to see and seem to be a better choice than more nuclear plants. We, as a country will never agree to cut down and conserve as we should, so better to use energy sources that are better than nuclear and fracking for natural gas. I read that it's possible that this fracking could cause earthquakes. That seems like something we then should not be doing.
Where are you sports fans??????????? Did you not watch this really great game? Just because Portland no longer has the Beavers you can't possibly have forgotten about baseball. The Seattle Mariners are THE Pacific Northwest team, so lets get behind them and support their efforts. Remember also that ALL the Mariners games are on TV if you have any cable hook-up, instead of as the Blazers games are only Comcast unless counting the few on KGW/TV. Check out the games and enjoy!!!!!
Sure, as a REAL FAN, I will watch the game tonight. It is kinda a relief that this season is finally over, but this team has needed our support all season so real fans will tune in. Of all the things this team needs to address first and foremost they should get a general manager who can then get a line on what the draft will bring. Upper management has NOT done a very satisfactory job of almost anything this season and all we can hope for is they will finally get it together before the draft. Hope burns eternal in the Blazer Fans Hearts!!!!!!!!!!!! Go Blazers!!!!!!!!!!!!!


text: theme includes the question, What were the primordial sources of organic matter, and where does organic synthesis continue today? The surfaces and interiors of the icy satellites display a rich variety of organic molecules—some believed to be primordial, some likely being generated even today; Titan presents perhaps the richest planetary laboratory for studying organic synthesis ongoing on a global scale. Europa, Enceladus, and Titan are central to another key question in this theme: Beyond Earth, are there modern habitats elsewhere in the solar system with necessary conditions, organic matter, water, energy, and nutrients to sustain life, and do organisms live there now? Exhibiting a global methane cycle akin to Earth's hydrologic cycle, Titan's complex atmosphere is key to understanding the workings of the solar system theme and the question, Can understanding the roles of physics,


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Plan DescriptionAre you looking for a beach house plan that works well on a narrow lot? This two-story design may be just what you are looking for. Step inside to find the living areas neatly arranged on the first floor. Formal living areas combine and enjoy the warmth of the fireplace. The secluded office is the ideal workspace for those who work from home. You will love the pass-thru kitchen with its grand island snack bar serving the great room, ideal for family get-togethers. A large deck extends the living areas outdoors providing a restful space to listen to the waves crashing on the shore. Four bedrooms enjoy the privacy of the second floor. Two master suites boast walk-in closets and privates baths while the secondary bedrooms share a full bath. Finished with a two-car, drive-under garage, you will love coming home to this coastal two-story home.
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Body paint and rainbow hair color were the trends of the day during this year's edition of the Vans Warped Tour at Verizon Wireless Amphitheater on July 2, 2014. The all-day music festival -- which primarily focuses on pop-punk but also includes hardcore, alternative and other genres -- was filled with an electric energy as bands such as Less Than Jake, Yellowcard, Bad Rabbits, I Fight Dragons and the Devil Wears Prada performed on the event's many stages.
Photos by Caroline Yoo for the Riverfront Times.
Published on July 3, 2014


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Three Law Faculty Members Receive University Merit Awards
USF offers semester abroad study opportunities at Charles University in Prague to 2 students each fall. All classes are taught in English. No foreign language required.
Exchange students often attend courses from the English program, "Czech Legal System in the European Context." Click here for the list of courses. In addition, students may choose courses from the LL.M. program (usually 2-3 courses per semester.) Click here for additional information about the LL.M. program.
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Fat bikes a more frequent sight on beach at Port Aransas
CORPUS CHRISTI - It takes a lot to turn heads on the beach in Port Aransas, but a new type of bicycle is doing just that. With four-inch-wide tires, so-called fat bikes look part cruiser, part motorcycle, part circus, and they are riding a rising tide of local interest.
"They look like someone put something together for a joke," said Johnscott Buerger, whose Port Aransas bike shop, Big Shell Bicycles, started renting and selling the bikes three years ago.
At the time, no dealers in Texas carried fat bikes, and few people had seen or heard of them. The tires are about double the width of many mountain bike tires. An extra-wide tire means that they traverse loose ground better than other bicycles. This has made them popular in snowy climates, and they are gaining traction in beach regions as well.
A basic fat bike weighs around 40 pounds, which sounds like a lot until people start rolling over terrain that would confound narrower tires.
"They come back with their mouths open, saying, 'Wow, that was easier than I thought,'" Buerger said.
Despite their hefty-sounding name, fat bikes are increasingly becoming a favorite for fitness.
"It really surprises you how good of a workout you can get, because you're on sand," Buerger said. "It elevates your heart rate like you're going up a hill."
The beach also provides a refuge from fast road traffic, a forgiving surface in case of falls, and an unbeatable view.
For those who like to combine cycling with other recreation, the possibilities are limited only by imagination. Buerger will rent fat bikes with fishing rod holders, trailers, or surfboard racks. He has even tried a gun rack on his own handlebars for off-road hunting excursions.
Some customers take the bikes to neighboring Saint Joseph Island, and Buerger dreams of a group ride one day to Big Shell Beach, approximately 90 miles down the coast.
Fat bike rentals at Big Shell Bicycles begin at $25 per four hours, and sales begin at $699. More information is available at bigshellbikes.com or 361-749-8479.
Goodwill Spring Sun 5K Run & Walk: 7:20 a.m. Saturday, Heritage Park.
Musical Miles 5K run & walk: 8 a.m. March 9, Cole Park.
Whooping Crane Strut 8K run, 5K run & 2-mile walk: 8 a.m. March 9, Memorial Park, Rockport.
Details and registration available at www.corpusroadrunners.com.
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Accommodations include a master bedroom with king-size bed, two bedrooms with twin beds, and a loft with two sofas. A well-appointed kitchen allows you to stay home and eat in the spacious dining area or eat al fresco on the screened deck.
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Holistic, Compassionate Care.
Hospice Care is the specialized comfort care provided to the terminally ill. It is a holistic, patient-centered approach which includes physical, spiritual, and psychosocial care and support for both the patient and family.
Care is provided for a wide variety of disease processes in many different community settings such as homes, skilled care nursing facilities and hospitals. The Hospice Team is made up of caring and compassionate nurses, social workers, a spiritual counselor, home health caregivers, and dedicated volunteers, and includes the assistance of other Berks VNA services when necessary.
Berks VNA also provides bereavement support for 13 months after your loved one has passed away. We understand that grieving is a process, and you don't have to go through it alone. Families have the option to speak one on one with our spiritual counselor, attend support group meetings, or participate in special events in memory of loved ones.
"The nurse who came to the hospital was great and provided excellent guidance during the last days of my mother's life."
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Meet Tammy: Our Community Educator for Hospice
Tammy will be working within the community to promote and educate about our Hospice Care. Our program stands apart from others because we are compassionate, responsive, and flexible in providing the best in care.
If you would like to set up an appointment to learn more about Hospice, or what sets our Hospice program apart, click the flyer below to contact us.


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Having made its highly anticipated debut on Fab, The Limited Edition Neon Pill is a portable wireless speaker powerful enough to rock any room in the house. Control playback right from your phone, laptop, or any other Bluetooth-enabled device from up to 30 feet away. The Pill is lightweight and small enough to fit in whatever you're carrying out the door. The included carrying case even comes with a handy carabiner so you can attach it to your backpack. And when calls come through, don't fumble for your phone—go hands free thanks to the Pill's internal microphone.
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Beats By Dre began with a simple thought, offered by Dr. Dre, himself. "People aren't hearing all the music." The legendary artist and producer teamed up with Chairman of Interscope Geffen A&M Records Jimmy Iovine to remedy this with headphones, devices, and services that create a high quality, end-to-end experience—delivering music that way the artists intended.
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This pastry will appear a little wet at first but will absorb the liquid when it is resting. Follow the instructions below to make a pie or quiche base. To make a gluten free pastry lid roll out the pastry between two pieces of cling film then remove one piece and use the other to support the pastry as you invert it over the pie. Remove the remaining film before baking.


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Holiday Inn Trenton Hotel is situated at the start of the Trent Severn Waterway, three miles from RCAF Memorial Museum, and approximately 95 miles from
We are conveniently located just off the 401 (behind Tim Horton's) at exit 526. Numerous fine restaurants are within a 5 minute drive.
The preferred airport for the Hotel Howard Johnson Trenton is Pearson International. The local attraction includes Pinnacle Playhouse.
This Travelodge is located on Old Highway 2, approximately four miles from downtown Trenton, and is 116 miles from Lester B. Pearson International Airport.
Find great deals on quality Trenton, Ontario hotels & resorts, or indulge at one of our luxury resorts. Take advantage of the many amenities that can be included with your stay such as in-room internet access, wifi, room service, fitness center, pool, hot tub, steam room, and shuttle services to and from the airport. Browse our Trenton, Ontario hotels and resorts and plan your Trenton, Ontario vacation today!


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Famous Single Moms
7 Mary Louise Parker
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From: Famous Single Moms
7. Mary Louise Parker. Unlike some of the moms on our list, Mary didn't choose to be a single mother, her boyfriend Billy Crudup left her for the much-younger Claire Danes when Mary was seven months pregnant. However, Mary was able to survive the breakup, raise her son, star in a hit TV show, and even adopt a daughter to add to her family.