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New amorphous semiconductor and chalcogenide compositions are provided exhibiting n-conductivity characteristics. Chalcogenide compositions, which are normally formed as p-type materials, are converted to n-type materials or are initially formed as n-type materials, by elevating the temperatures thereof below their crystallization temperature and substantially in excess of the temperature at which its conductivity at room temperature versus annealing temperature curve decreases sharply from a relatively high constant value and allowing the same to cool to room temperature.
1. An n-type chalcogenide amorphous material as measured by the Seebeck coefficient, said n-type material being that obtained by subjecting a normally p-type amorphous chalcogenide composition to a temperature below its crystallization temperature and which is located at a point on its room temperature versus annealing temperature curve which is sufficiently in excess of the temperature at which its conductivity at room temperature decreases sharply from a relatively high constant value that its Seebeck coefficient has a negative value, and then cooling the same to room
2. The n-type amorphous chalcogenide material of claim 1 and where the composition has at least about 2% of one or more of the chalcogenide elements of sulfur, selenium and tellurium and has the formula:
Gex Tey Dz Em
D=selenium or sulfur or combinations of both
E=arsenic or antimony or combinations of both
x is between and including 0 and 98% (atomic)
y is between and including 0 and 90%
z is between and including 0 and 75%
3. The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and tellurium in atomic percentages
4. The n-type chalcogenide material of claim 3 which consists essentially of a mixture of germanium, selenium and tellurium in atomic percentages determined by the areas encompassed by the inclined hatched areas of FIG.
5. The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, tellurium and arsenic in atomic percentages
6. The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and arsenic in atomic percentages
7. The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and antimony in atomic percentages
8. The n-type chalcogenide material of claim 1 which is a sputter or vapor
9. The n-type chalcogenide material of claim 2 which is a sputter or vapor
10. The n-type chalcogenide material of claim 4 which is a sputter or vapor deposited film on a substrate.
The invention herein described was made in the course of or under a contract with the Department of Defense of the U.S. Government.
The present invention relates to chalcogenide amorphous semiconductor materials, their application to the making of current control devices and methods of making the same. In this context, chalcogenide materials are construed as materials containing at least 2 percent of one or more of the chalcogenide elements, sulfur, selenium or tellurium.
Chalcogenide amorphous semiconductor materials have been used in recent years for the manufacture of two types of switching devices, one of which devices is sometimes referred to as a threshold switch device and the other of which is sometimes referred to as a memory switch device. Such devices are disclosed in U.S. Pat. No. 3,271,591 to S. R. Ovshinsky granted Sept. 6, 1966. When a film of such chalcogenide material is sandwiched between or extends between two suitable electrodes, the application of electrical pulses of the correct energy time profile can cause the structure to display either a high or a low resistance, with a resistance ratio at least from about 103 to 104. In its high resistance or relatively non-conductive state, these devices have resistivities in the range from about 103 to 1012 ohm-centimeters, and in their low resistance or conductive states they commonly have resistivities in the range of from about 10 to 10- 6 ohm-centimeters.
The threshold switch devices are driven into a low resistance or conductive state by a voltage in excess of a given threshold voltage value and remain in their conductive states until the current flow therethrough drops below a given holding current value. Examples of chalcogenide materials used in threshold switch devices include compositions of (a) 40% tellurium, 35% arsenic, 18% silicon, 6.75% germanium and 0.25% indium; and, (b) 28% tellurium, 34.5% arsenic, 15.5% germanium and 22% sulfur.
Memory switch devices are driven into a low resistance or conductive state by a voltage in excess of a given threshold voltage value and remain in their conductive states even after all sources of energy are removed therefrom, and are resettable to their relatively non-conductive state by application of a reset pulse, as explained in the aforesaid U.S. Pat. No. 3,271,591. The voltage pulse which sets a memory device-forming material is generally a pulse of milliseconds duration. A reset pulse is a very short current pulse lasting generally less than about 6 microseconds in duration. Memory switch semiconductor materials are vitreous semiconductor materials which are reversibly changed between two stable structural states generally between relatively dis-ordered or amorphous and relatively ordered crystalline states. Their compositions are at the border of the glass regions, and are generally binary compositions of tellurium and germanium with germanium comprising generally greater than 10% of the composition or compositions like this including additional elements of group V or VI of the periodic table. Examples of memory material compositions are (a) 15% (atomic) germanium, 81% tellurium, 2% antimony and 2% sulfur; and (b) 83% tellurium and 17% germanium.
The useful chalcogenide compositions used in making threshold and memory switch devices have been materials which have had p-type conductivity, as generally indicated by a positive thermopower or Seebeck coefficient measurement. (The designation of a material as an n-type conductivity material in the semiconductor art generally refers to a material which has electrons as majority current carriers rather than holes characteristic of p-type conductivity materials.) The conductivity type of chalcogenide materials used to make threshold or memory switch devices was not considered to be of any real significance, since the threshold and semiconductor switch devices referred to are not p-n junction devices like transistors where successive layers of different conductivity type are associated together to form an amplifier device or the like. However, it has been recently proposed to make two and three terminal devices from chalcogenide compositions to form rectifiers and transistors, where the particular conductivity type of the material involved can be of significance.
While it was sometimes heretofore stated that it was believed that n-type chalcogenide materials existed or could be made prior to the present invention, specific n-type chalcogenide compositions were not reported and chalcogenide materials were generally thought to be p-type materials. Also, while some experimental work has heretofore been carried out in testing various electrical characteristics of germanium-tellurium binary compositions of varying percentages of these two elements, measurements were not reported from which it could be determined whether any of these compositions were of the p or n conductivity type. However, applicants have taken measurements of such binary compositions and found that within the range of compositions of these two elements useable in making memory switch devices (namely where tellurium constituted 35-95% of the binary composition), the material is of the p-type. It was discovered, however, that this binary composition is of the n-type for tellurium percentages in the range of from near 0 to near 35%. The resistivities of these n-type germanium-tellurium compositions are of from very low to modest magnitudes, making them suitable as layers for junction devices where low resistivities are desirable. (However, all switch device-forming chalcogenide compositions will generally be in a useful low resistance state to form satisfactory two and three terminal p-n junction devices in their switched conductive state even when their unswitched high resistance state has a high resistivity.)
A useful feature of some of these new n-type amorphous chalcogenide compositions is that some of them have significantly lower resistivities at room temperature than resistivities reported before by other workers testing resistivities of amorphous germanium of the n conductivity type. Thus, it was discovered that some of these new alloys of germanium with small amounts of chalcogenide materials were fabricated having lower resistivities than germanium itself.
In accordance with one of the features of the invention, unique and useful n-type amorphous chalcogenide compositions not heretofore used in the making of the threshold and memory switch devices referred to are obtained by vapor or sputter depositing on a substrate, held at such modest temperatures as 70° or 80° C and lower temperatures, various specific amorphous chalcogenide compositions not heretofore fabricated. Such compositions will be more fully disclosed hereinafter.
In accordance with another feature of the invention, we have discovered that many chalcogenide compositions having a p-conductivity type when deposited on a substrate at a modest temperature, like the p-type compositions used to make threshold switch devices as described, can be converted to a unique useful state for which the material is still amorphous but the conductivity is n-type. This p-type to n-type transformation is accomplished by annealing the material at a desired elevated temperature which is below the crystallization temperature thereof and substantially in excess of the temperature at which the conductivity at room temperature versus annealing temperature curve thereof decreases sharply from a relatively high value flat portion of the curve. Thus, if the temperature of such a normally p-type amorphous chalcogenide composition is repeatedly raised to various progressively increasing temperatures and held at such temperature for a given period (e.g. 5 minutes) and then returned to a reference temperature like 25° C where the resistance thereof is measured, a curve can be drawn of conductivity versus the annealing temperature involved. When a temperature is reached at which the conductivity starts to sharply decrease, measurements are taken to determine whether the material is of a p or n-type. (One conventional way of determining whether a composition is p or n-type is a thermopower or Seebeck coefficient measurement where the materials thermo-electric voltage versus the temperature difference producing the voltage is plotted. A p-type conductivity is indicated by a positive slope in the above plot and an n-type conductivity is indicated by a negative slope). It is observed that as the annealing temperature is raised in the region where the conductivity sharply decreases as explained, the degree of p conductivity will progressively decrease until a temperature is reached where a weak n-conductivity composition is obtained. Then, as the annealing temperature is increased further, the degree of n conductivity progressively increases to a maximum at a given annealing temperature value. Temperatures of the order of magnitude of from 200° to 400° C were generally required to maximize the n-type character where these temperatures were maintained for five minutes. It should be understood that annealing effects are both time and temperature dependent, so that a given annealing effect could be achieved at somewhat lower than a given temperature if the composition involved is held at that lower annealing temperature for a longer time.
Instead of obtaining an n-conductivity amorphous chalcogenide material from an initially p-type material by the annealing procedure just outlined, a similar result can be achieved by heating the substrate upon which the composition is sputter or vapor deposited to the elevated temperature which was the annealing temperature for the composition involved which produced an n-type composition in the annealing process described, and then allowing the same to cool to room temperature. However, this would require sputtering apparatus capable of maintaining substrates at relatively high temperatures, which may not be as practical or feasible as initially depositing the chalcogenide glass compositions as p-type compositions and then, in a separate annealing furnace, carrying out the desired annealing process.
Many of the amorphous chalcogenide materials produced by the temperature elevating or annealing processes produce a high resistivity n-type amorphous semiconductor material which could be used in making threshold switch devices and also making use of its n-type character in the high resistance state through the electronic interaction of this layer with the other layers where a high resistivity is needed or is of no consequence. For example, base layers in p-n-p devices can be so thin that a high resistivity will have no adverse effect. The n-type amorphous chalcogenide compositions of the invention also provide compositions of low resistivity. Examples of applications for low resistivity n-type material are as cathode or anode layers in p-n rectifier devices or as emitter and collector as well as base electrode-forming layers in amplifier transistor-like devices. (However, the layers used in such junction devices can also have high resistivities provided they are used in their low resistance switched state.)
In the past, since amorphous semiconductor materials were known as p-type, they have appeared unsuitable for any of the above mentioned devices requiring the presence of both p and n type regions. Hence, the n-type materials described herein opens up applications for active devices consisting of n and p-type regions of amorphous semiconductors. The advantage of using p and n-type amorphous chalcogenide films to make p-n junction devices is that these devices can be inexpensively mass produced by a simple film deposition process and they are radiation hard so the devices will operate effectively in the presence of ionizing and neutron radiation, unlike conventional semiconductor devices like transistors made of crystalline semiconductor compositions.
In accordance with another aspect of the invention, p-n junction amorphous semiconductor devices replacing crystalline p-n junction devices are mass produced by film depositing techniques replacing the more cumbersome processes used to make p-n crystalline junction devices like transistors and the like. Thus, p-n junctions can be formed by sputter or vapor deposition an amorphous chalcogenide layer which is initially formed as an n-type material or is formed n-type by annealing the same, and sputter depositing a p-type layer over the n-type layer or vice versa.
The various n-type chalcogenide compositions have at least about 2% of one or more of the chalcogenide elements of sulfur, selenium and tellurium and with which the present invention deals can generally be identified by the following formula (although this formula also includes compositions which are p-type):
Gex Tey Dz Em
D=selenium or sulfur or combinations of both
E=arsenic or antimony or combinations of both
x is between and including 0 and 98% (atomic)
y is between and including 0 and 90%
z is between and including 0 and 75%
m is between and including 0 and 98%
For n-type materials, the percentage limits on a given component depend in a complex way on the relative percentages of the other components. New n-type amorphous chalcogenide compositions are covered by the above formula where if tellurium or germanium is present there is present also significant amounts (e.g. about 2 percent or more) of one or more of the D and E elements.
Specific examples of these materials and specific processes for making the same will be later described.
FIG. 1 is a ternary diagram of germanium (Ge), tellurium (Te), and selenium (Se) compositions based on atomic percentages of these elements, the stippled areas thereof indicating those compositions having an n-conductivity type in an unannealed state;
FIG. 2 is a ternary diagram corresponding to FIG. 1 with isoresistivity lines thereon showing the resistivity of the various compositions depicted therein;
FIG. 3 is a curve showing the conductivity at room temperature of the composition GeTeSe (which is p-type in its unannealed state) for various progressively increasing annealing temperatures;
FIG. 4 is a curve showing the variation in conductivity at room temperature with progressively increasing annealing temperatures of the composition Ge80 Te20 (which is n-type in its unannealed state);
FIG. 5 is a ternary diagram of the compositions of FIGS. 1 and 2 and shows in the various hatched areas thereof those compositions which are converted to an n-conductivity type when annealed in accordance with the invention, the inclined hatched areas having a substantial n-conductivity and being homogeneous compositions which have a substantial glass transition temperature (100° C and higher), and the stippled areas thereof indicating those compositions having an n-conductivity type whether the materials are unannealed or annealed;
FIG. 6 is a diagram corresponding to FIG. 5 showing the various iso-resistivity lines from the annealed compositions of FIG. 5;
FIG. 7 is a ternary diagram for various compositions of germanium, tellurium and arsenic and shows in the stippled areas thereof those compositions which have an n-conductivity type in their unannealed state;
FIG. 8 is a ternary diagram corresponding to FIG. 7 which indicates in the hatched areas thereof those compositions which are converted to an n-conductivity type by the annealing process of the invention;
FIG. 9 is a ternary diagram for germanium, selenium and arsenic compositions and shows in the stippled areas thereof those compositions which have an n-conductivity type in the unannealed state thereof;
FIG. 10 is a ternary diagram corresponding to FIG. 9 and shows in the hatched areas thereof compositions which are converted to an n-conductivity type by the annealing process of the invention;
FIG. 11 is a ternary diagram for germanium, selenium and antimony compositions and shows in the stippled areas thereof those compositions which have an n-conductivity type in the unannealed state thereof;
FIG. 12 is a ternary diagram corresponding to FIG. 11 and shows in the hatched areas thereof those compositions which are converted to an n-conductivity state in accordance with the annealing process of the invention;
FIGS. 13A and 13B show the steps in the preparation of an n-p junction current control device by successive deposition of amorphous chalcogenide layers with an annealing treatment applied to one of the layers to provide an n-conductivity type layer;
FIGS. 14A and 14B show a process of fabricating an n-p junction current control device by depositing only a single layer of a p-type chalcogenide glass and subsequently irradiating a selected portion thereof to form an n-conductivity type region therein; and
FIG. 15 illustrates the successively applied layers of a p-n-p junction current control device with associated electrodes which can be fabricated by the film deposition techniques of the present invention.
Refer now to FIG. 1 which shows Ge-Te-Se compositions sputter or vapor deposited upon a substrate held at modest temperatures, for example, temperatures commonly used in sputtering equipment which are at or below about 70°C. (While sputter deposition is preferred, these films can also be made by vapor deposition.) The compositions shown in the stippled areas are unexpectedly deposited as n-conductivity materials as measured by the Seebeck coefficient measurements. Boundary line 2a in FIG. 1 separates the stippled n-conductivity type compositions from those which are deposited in their p-conductivity state. As previously indicated, (except for the binary compositions of germanium and tellurium) the various compositions shown as having n-conductivity states are not believed to have been heretofore fabricated, and the Ge-Te binary compositions which were fabricated were probably not known to have been of an n-conductivity type since it was previously thought that these chalcogenide glass compositions were of the p-conductivity type.
FIG. 2, which illustrates the resistivities of the various compositions of FIG. 1, shows that the unannealed compositions rich in germanium and tellurium have relatively low resistivities which increase in the direction of the compositions which are rich in selenium.
In accordance with the method aspect of the invention, it was discovered that many of the compositions which are of the p-conductivity type in FIG. 1 can be converted into the n-type region or formed as n-conductivity type materials by elevating the same to a temperature which can be determined in a manner illustrated in FIG. 3, and then allowing the same to cool to room temperature. First, of all, a film of the composition involved is heated to a test temperature which is maintained for a given test period (e.g. 5 minutes), and then is allowed to cool to room temperature, at which the resistivity and Seebeck coefficient is measured. This procedure is repeated at various progressively increasing test temperatures. As shown in FIG. 3 for the particular composition of GeTeSe, the conductivity at room temperature of the annealed composition remains substantially constant as indicated by curve portion 6a. However, for annealing temperatures in excess of about 110° C, the conductivity starts sharply to decrease to form an inclined curve portion 6b which terminates in a horizontal curve portion 6c at an annealing temperature of about 270° C. No further significant changes in room temperature conductivity occur for annealing temperatures in excess of 270° C, until the annealing temperature reaches the crystallization temperature where the conductivity suddenly increases as indicated by curve portion 6d. The glass transition temperature Tg of 290° C for this composition is at a point along the horizontal curve portion 6c.
While the conductivity of the material decreases along the inclined curve portion 6b, the Seebeck coefficient (which is a measure of its conductivity type) progressively decreases from a given positive value to a value of 0 at an annealing temperature of about 195°C. At an annealing temperature of about 210°C., the Seebeck coefficient turns negative (indicating n-conductivity material) and progressively increases reaching an approximate maximum n-type value at an annealing temperature of about 270°C, which is about at the point where the inclined curve portion 6a joins the relatively flat curve portion 6c.
FIG. 4 illustrates the room temperature conductivity versus the annealing temperature curve for compositions rich in germanium such as Ge80 Te20, which are formed in their n-conductivity state in their unannealed state (and so fall in the stippled area of FIG. 1). During the annealing process, the n-conductivity state of such a material remains and it will be noted that the conductivity at room temperature remains substantially flat as indicated by curve portion 6a' until an annealing temperature is reached where the conductivity curve suddenly starts to progressively decrease along an inclined curve portion 6b'. The inclined curve portion 6b' terminates at the crystallization temperature for the composition involved, there being no Tg therefore.
FIG. 5 indicates the results of the annealing process described applied to all of the Ge-Te-Se compositions of FIG. 1. Those compositions shown in FIG. 5 by hatched areas are those compositions which are converted from a p-conductivity state to an n-conductivity state by annealing. The solid boundary line 2a' separates compositions having n and p-conductivity states. The boundary line 8 separates compositions having moderate to strong n-type behavior (that is the negative Seebeck coefficients are at least about 0.5 millvolt/° C) from those having weak n-type behavior. Those compositions identified by vertical hatched areas have either relatively small n-conductivity characteristics or are commercially inacceptable for most applications either because the annealed composition is non-homogeneous because of separation into different phases or have glass transition temperatures of modest value (i.e. at or below about 100° C). The endless line 9 encloses the compositions which are non-homogeneous. Those compositions encompassed by inclined hatch lines extending upwardly to the right are the most desirable n-type compositions in that they are homogenous, have substantial negative Seebeck coefficient values and have glass transition temperatures above 100° C.
FIG. 5 also shows a boundary line 10 separating those compositions to the left of the line which have moderate to strong p-type behavior (i.e. positive Seebeck coefficients in excess of 0.5 millvolt/° C) from those having lower p-conductivity characteristics.
FIG. 6 indicates the iso-resistivity lines for the compositions of FIG. 5, and it will be noted that the various iso-resistivity lines have moved upwardly from their position in FIG. 2 where they were in their unannealed state, which is consistent with FIG. 3 which shows a reduction in conductivity as a result of the annealing operation.
Arsenic (As) can be added to the Ge-Te-Se and Ge-Se-Sb alloys disclosed in FIGS. 5 and 11 to provide amorphous films having n-type behavior. Amorphous arsenic itself is n-type both before and after annealing. As further examples, consider the following amorphous alloy films, which are outlined in three categories:
A. GeTe is p-type in both the unannealed and the highly-annealed states. GeTeAs is also p-type in the unannealed state but is n-type in the highly-annealed state. Arsenic is n-type in both the unannealed and highly annealed states. Any intermediate composition between GeTe and As can be fabricated and the p-type or n-type behavior progresses continuously from that described above for GeTe, through that described for GeTeAs, to that described for As.
B. GeSe is p-type in the unannealed state and n-type in the annealed state. GeSeAs is just barely n-type in the unannealed state and distinctly n-type in the highly-annealed state. Arsenic, as described above, is distinctly n-type in both the unannealed and highly annealed states. Any intermediate composition between GeSe and As can be fabricated and the p-type or n-type behavior progresses continuously from that described above for GeSe, through that described for GeSeAs, to that described for As.
C. Amorphous four-component alloys containing any arbitrary percentages of the elements Ge, Te, Se or As can be fabricated and will have n or p-type behavior depending upon their composition and upon their annealing state. A guide to this behavior is indicated by the above description for Ge-Te-As alloys and GeSe-As alloys and the description for Ge-Te-Se alloys as indicated in FIGS. 1 and 2. For example, if an arbitrary proportion of Ge, Te and Se constituents is selected from the Ge-Te-Se ternary system, addition of arsenic to this alloy will increase the likelihood of n-type behavior beyond the regions shown as n-type in FIG. 5. As a specific example, Ge2 TeSeAs2 is p-type in the unannealed state and n-type in the highly annealed state. A feature of adding arsenic to those Ge-Te-Se alloys which are on the Se-rich side of the ternary (for example, near GeSe and GeSe2 ) is that addition of arsenic reduces the resistivity while maintaining the n-type behavior. The addition of arsenic to tellurium rich materials such as GeTe or GeTe2 increases the resistivity however.
Generally, antimony is similar in effect to that of arsenic but does not have as strong an n-type tendency. For example, unannealed GeSe is moderately p-type while unannealed GeSeSb is n-type. Also, annealed GeTe is strongly p-type whereas annealed GeTeSb is weakly p-type. These two examples show that antimony does increase the n-type tendency of a Ge-Te or Ge-Se alloy.
FIGS. 7 and 8 confirm the general principle that many different amorphous chalcogenide compositions can be converted from p-type to n-type materials using an annealing process like that previously described or by otherwise elevating the temperature thereof to a point where it falls within the region where the conductivity decreases with increase in annealing temperature. Thus, FIGS. 7 and 8 show the different n and p compositions for two or three element alloys comprising germanium, tellurium and arsenic, the hatched areas in FIG. 8 showing the p-type unannealed compositions of FIG. 7 which are converted to n-type materials by an annealing process like that described. The boundary lines 2b and 2b' respectively in FIGS. 7 and 8 separate the n and p compositions.
FIGS. 9 and 10 show the different n and p compositions for two or three element alloys comprising germanium, selenium and arsenic, the hatched areas in FIG. 10 showing the p-type unannealed compositions of FIG. 9 which are converted to n-type materials by an annealing process like that described. The boundary lines 2c and 2c' respectively in FIGS. 9 and 10 separate the n and p type compositions.
FIGS. 11 and 12 show the different n and p compositions for two or three element alloys comprising germanium, selenium and antimony, the hatched areas of FIG. 12 showing the p-type unannealed compositions of FIG. 7 which are converted to n-type materials by an annealing process like that described. The boundary lines 2d and 2d' respectively in FIGS. 11 and 12 separate the n and p type compositions.
Selenium can be partially or completely replaced by sulfur in the compositions of FIGS. 5, 9 and 11. If selenium were replaced by sulfur in FIG. 5, the boundaries between n and p regions would shift somewhat, but the general results are similar, particularly if the sulfur content is less than about 80%. However if the sulfur content is as high as 90 or 100%, the results will be much different than those for 90 or 100% selenium.
As previously indicated, one of the main applications of the new n-type compositions of the present invention and previously unknown but presently discovered n-type chalcogenide compositions are in p-n junction devices like rectifiers and transistor-type devices and the like which, heretofore, have been primarily doped crystalline semiconductor devices which are difficult to fabricate and are affected by radiation. With the discovery and development of n-type amorphous chalcogenide materials it is possible by film deposition to make current control devices like rectifiers and amplifiers on an inexpensive mass production basis. N-type layers of such devices may be selected from the various n-type compositions referred to in this specification and p-type layers in such devices can also be selected from those materials described above or from other p-type amorphous semiconductor materials. Examples of such other p-type amorphous semiconductor materials include As2 Te3 Tl2 Te, As2 Te3 Tl2 Se, As2 Te3, As2 Se3, Te48 As30 Si12 Ge10 and Ge15 Te81 Sb2 S2. A large and continuous range of optical band gaps, as well as resistivities, is available for both p and n type materials.
The p-n current control device can also be formed with p-n type layers of identical composition but formed in a different way, as exemplified by the process shown in FIGS. 13A and 13B to which reference should now be made. FIG. 13A shows a substrate 15, which may be any suitable substrate material like glass or a semiconductor silicon chip substrate, upon which is deposited one or more layers of conductor material forming electrodes, like the electrode-forming layer 17 in FIG. 13A. Upon this electrode-forming layer 17 and the substrate on one side thereof is sputter deposited a layer 19 of initially n-type or an initially p-type chalcogenide glass material which is converted to an n-type material by the annealing process described. A p-type layer 20 of amorphous semiconductor material is deposited over the n-type layer 19 and the substrate on one side thereof. An electrode-forming layer 21 is then deposited over the p-type layer to form the second electrode of a two terminal rectifier device. The electrode-forming layers 17 and 21 can be comprised of any one or more well-known electrode materials which are preferably refractory metals like molybdenum used as electrodes in chalcogenide glass semiconductor switches. These electrode materials may be overlaid with aluminum or the like (not shown), or other commonly used highly conductive terminal-forming materials.
FIGS. 14A and 14B show another technique for forming p-n junction current control devices in accordance with the method aspects of the present invention. As there shown, a substrate 15 has applied thereto spaced electrodes 17' and 21' upon which is preferably sputter-deposited a p-type amorphous chalcogenide material like those previously described. The amorphous chalcogenide layer 19' overlays the electrodes 17' and 21' and fills the gap therebetween. Then, a portion of the amorphous chalcogenide layer 19' between the space edges of the electrodes 15' and 17' may be irradiated with a beam from a laser or other suitable intense light source, which raises the temperature of the radiated portion to one which will anneal the material to a point where it will be converted to an n-type material as previously described, thereby forming a p-n junction current control device.
FIG. 15, to which reference should now be made, shows a three terminal p-n-p current control amplifier device analogous to a transistor. The glass or other substrate 15 has initially applied thereto three spaced electrode-forming layers 17", 23 and 25. A layer of insulating material 27, which can be silicon dioxide especially when the substrate 15 is a silicon chip, is applied in the space between the electrode-forming layers 23 and 25 and an insulation layer 29 is deposited on the side of the electrode-forming layer 23 facing the electrode-forming layer 17", leaving a gap between layer 29 and layer 17". Then an amorphous p-type material 19" may be deposited over the electrode-forming layer 17" and in the gap between the latter layer and the insulating layer 29. Next, a layer 21" of chalcogenide glass material is applied over the p-type layer 19" which layer 21" extends over the insulating layers 29 and the electrode-forming layer 23. An insulating layer 27' is then deposited over the insulating layer 27 to insulate the adjacent edge of the just deposited chalcogenide glass layer 21" and the electrode-forming layer 25. The initially deposited layer 21" is in a p-conductivity state which can be converted by annealing to an n-type material at a temperature which is below that which will convert the layer 19" to an n-type material if the latter is of a type which can be annealed into an n-type material.
Lastly, a p-type amorphous layer 31 is deposited over the n-type layer 21" so the layer 31 overlaps the insulating layer 27' and the electrode-forming layer 25. The electrode-forming layer 17", 23 and 25 act respectively as connecting electrodes to the respective p-n-p layers 19", 21" and 31.
It should be apparent that the present invention has materially advanced the art of fabricating current control devices using n-type amorphous films in one or more layers of the current control devices involved. Also, new n-type compositions have been developed as a result of the method aspects of the present invention that have great commercial value.
It should be understood that numerous modifications may be made of the more preferred form of the invention described without deviating from the broader aspects of the invention.
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Our winery and tasting room is located at
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We are a family-owned and operated winery located in the Puget Sound Convergence Zone located in the Artisan Hill section of Woodinville's Warehouse Winery District. Grapes from some of Washington's best vineyards in the Red Mountain, Snipes Mountain and Columbia Valley areas are vinted and blended by winemaker Scott Greenberg into award-winning small production, premium quality wines. Our current production is about 1,200 cases. Our tasting room is open Noon-5:00 pm on Saturdays and for special events. We invite you to join our e-mail list, become our Facebook fan, follow us on Twitter or Yelp, or see what we're doing on Flickr.
We are often asked "what is a convergence zone"? First, it's a weather phenomenon in the Puget Sound area, and our winery is in the middle of the CZ. Here is a good article on the convergence zone. "Zone" is also a city planning term--residential zone, commercial zone, industrial zone, etc. Since Scott is a city planner we thought it was only fitting to create a "convergence zone" bringing together city planning and wine. Finally, it means a convergence of different grapes, vineyards and winemaking styles to produce drinkable, ageable, aromatic, palate-pleasing and long-finishing wines.

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PrepZone Picks: Week 1
Vote on which teams you believe will win! This week's games are listed to the left ... simply click on the team you believe will win the game. Whichever team draws the most votes will serve as the readers' pick.
The 89th season of high school football on the Treasure Coast is hitting the ground running.
Two rivalries normally associated with the middle or end of the season highlight a 10-game Week 1 schedule.
Fort Pierce Central and Fort Pierce Westwood played one of the most compelling games in area history just nine months ago to wrap up the 2010 regular season.
This year, Showdown 32 kicks off the regular season.
School officials hope the move will generate more season-long interest in the programs. Back in 1993, Showdown 16 kicked off Fort Pierce Central's season (the Cobras had a Week 1 bye while Westwood opened with a win over Gateway).
A year ago, Fort Pierce Westwood rallied for a 22-21 win to complete its first undefeated regular season since 1989.
Martin Bowl 28, the annual Martin County-South Fork game, is a season opener for the first time. Martin County won 14-7 last season to take a 14-13 lead in the series, which began in 1984.
Eric Pfahler: 74-21 (.779)
Laurel Pfahler:74-21 (.779)
PrepZone readers: 70-25 (.737)
Dennis Jacob: 68-27 (.716)
Jacob returns for another season. Laurel Pfahler will rejoin our merry band later this season. Sports editor Mike Graham and contributor Jon Santucci also will make weekly predictions this season.
Just remember ... the picks are for fun. Take the time to vote on the games, then tell us why you think a particular team will win.
Fort Pierce Central at Fort Pierce Westwood, 7
Martin County at South Fork, 7
Merritt Island at St. Lucie West Centennial (at Port St. Lucie), 7
St. Edward's at Warner Christian, 7
Jupiter Christian at Jensen Beach, 7
Gulliver Prep at Okeechobee, 7
Village Academy at Treasure Coast, 7
Sebastian River at Evans, 7:30
Port St. Lucie at Vero Beach, 7:30
Berean Christian at John Carroll, 7
Mike Graham
Fort Pierce Central 35, Fort Pierce Westwood, 14: This showdown is pretty much one sided this year
Martin County 24, South Fork 21: Bulldogs make it interesting, but late field goal decides it
St. Lucie West Centennial 21, Merritt Island 14: Eagles win the battle up front and the game, too
Warner Christian 42, St. Edward's 14: The Pirates are finding the going tough against road FHSAA opponents
Jensen Beach 20, Jupiter Christian 17: Good showing at Vero Beach inspires Falcons in tight game
Okeechobee 28, Gulliver Prep 21: Brahmans' balanced ground game is the difference in this one
Treasure Coast 14, Village Academy 7: Titans get off to good start after taking a beating in Kickoff Classic
Evans 24, Sebastian River 21: Sharks make this a close one, but Evans escapes with narrow home win
Vero Beach 28, Port St. Lucie 14: No problems with Indians' offense, but defense still finding their way
John Carroll 31, Berean Christian 7: Golden Rams have it all working against an outmanned visitor
Jon Santucci
Fort Pierce Central 34, Fort Pierce Westwood 14: Westwood's defense will have a hard time with the Marcuses (Sigmon and Levy).
Martin County 31, South Fork 21: The Tigers' secondary should be able to handle the Bulldogs' new offense.
Merritt Island 24, St. Lucie West Centennial 13: Centennial has a strong defense, but will have its hands full with Merritt Island.
Warner Christian 42, St. Edward's 0: Warner Christian is very, very good and should have no trouble with the Pirates.
Jupiter Christian 31, Jensen Beach 24: The Eagles win another close game against the Falcons.
Gulliver Prep 30, Okeechobee 21: D.J. Washington and Co. should be able to move the ball, but probably will come up short.
Treasure Coast 31, Village Academy 7: The Titans should have no trouble with Village Academy.
Sebastian River 27, Evans 14: The Sharks go on the road and get the win.
Vero Beach 41, Port St. Lucie 7: The Jaguars struggled defensively against Gardens. Vero will be a tough test.
John Carroll 28, Berean Christian 10: The Golden Rams offense should click against Berean.
Dennis Jacob
Fort Pierce Central 28, Fort Pierce Westwood 14: Cobras begin Josh Shaffer era with Showdown trophy.
South Fork 21, Martin County 17: Bulldogs pull big upset to even Martin Bowl series at 14.
Merritt Island 21, St. Lucie West Centennial 13: Mustangs make it 4-for-4 against Eagles.
Warner Christian 48, St. Edward's 3: Perennial power flexes its muscles.
Jupiter Christian 28, Jensen Beach 21: Will any area team stop the mighty 1B Eagles?
Gulliver Prep 31, Okeechobee 14: Brahmans piled up points in preseason game, but may have problems against Gulliver Prep
Treasure Coast 24, Village Academy 7: Titans open sixth season with a victory over 1B program.
Sebastian River 24, Evans 23: Trojans won only one game last season, but veteran coach Chip Gierke, a perennial winner in Orlando, is the new head coach.
Vero Beach 38, Port St. Lucie 14: Port St. Lucie has never finished closer than 17 points against the Fighting Indians.
John Carroll 21, Berean Christian 10: Golden Rams begin 57th season with a win.
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Dear Scarlett Johansson you're doing it right.
Oh ho, look at the wave. That's an entire wave of water you could be filling up this water bottle with. We could just sit here and drink all that water right from that one wave.
If I had that chair I couldn't really enjoy laying flat like this. Those chairs aren't designed to tan the bun side of your body. Got my elbows ALL in the sand.
Can you walk me past the sand crabs real fast? They know you, they wont attack me if they see you.


text:
Hold down Control (PC) or Command (Mac) key + mouseclick to select more than one option
|Avg. Dinner Entrée
|Greater than $25
|$18.01 - $25
|$12.01 - $18
|$7.01 - $12
|Less than $7
Posted by John on 08/25/2014
Have been to Catahoula a few times, and would suggest the restaurant for brunch over other meal times. Their outdoor dining area is very cute and great for warm mornings. Sadly, their dinner isn't up to snuff. I've been disappointed on a few occasions for standard fare and their NOLA inspired cuisine.
Posted by Keely on 11/17/2010
Amazing food! A refreshing change in the neighborhood with unique and super yummy dishes and drinks. Just a few blocks from South Street, great outdoor dining on a summer day. The Po Boys are fantastic, crispy with just the right amount of seasoning, and the fries that accompany them are the best in the City. The flat...breads are crispy and have the perfect amount of toppings and seasonings, a wonderful appetizer to share or to devour on your own. The BBQ shrimp with the grilled corn bread is another "must try." I don't eat red meat but my carnivorous friends are super picky about their burgers and say that the quality of the meat it self is above and beyond anything they've experienced at far pricier restaurants in the area. The fried green tomato and goat cheese toppings on the burger make it a one-of-a-kind experience. Desserts are out of this world and not to be skipped. They're worth the extra calories! Brunch is equally as delicious, the pancakes I ordered last time I was there were nearly bigger than the plate they were served on and were simply scrumptious. The atmosphere is intimate and inviting. The game is always on and the fellow diners are pleasant and willing to talk about the great play and the great food. Even if your team loses, you'll leave happy since the food is so good! It's defiantly worth trying out. I found Catahoula in early August and have been back nearly every week. The prices are very reasonable, especially for the quality of the food and drinks.
Posted by Samantha on 08/22/2010
This place is delicious and they have great Happy Hour/ Phillies game deals! The brunch shrimp and grits were superb as are the hushpuppies, collard greens and fried green tomatoes. I have yet to try the entrees but I cant wait! Great neighborhood place.


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IPA Source is now available for WSC students and faculty.
This music database focuses on literal lyrical translations of foreign language art songs and opera. This expanding source contains translations for works in Latin, Italian, German, and French. Users can easily search by composer, poet, title, opera aria, or Latin text. When the work is identified, click on "download this file" for a printable copy of the translations.
To access IPA, navigate to "Article Databases" on the site menu and click on "IPA Source" or go to this summary page.


text: Udonis Haslem out vs. Thunder with Lower Leg Contusion From @MiamiHEAT Feb 14, 2013 Share Tweet Next ARTICLE » Use your ← → (arrow) keys to browse more stories Christian Petersen/Getty Images 9 Reads 0 Comments Udonis Haslem (lower right leg contusion) did not make the trip to Oklahoma City. He is listed as day-to-day. Continue Reading on @MiamiHEAT »


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Jayou sent over his brand new remix of "I Don't Like You". I don't think I have heard a bad track from him yet. Mad respect for the guy. And it gave me a chance to post a Lil Jon pick, that is always a good thing.
Lil Jon & Diplo – I Don't Like You (Jayou Remix) (YSI)
Trouble Andrew just finished a new mixtape which is released this week entitled "The Trouble Gang Mixtape". The mixtape features a wide range of collaborators including Lil Jon, Spankrock, Amanda Blank, Santigold, Diplo, John Hill, Stunnaman, Hollywood Holt, Curren$y, Ninjasonik, Jackie Chain and many more. Go grab it now.
Pic from The Rumble
Whoa, it's the remix of "I'm The Shit" from b-more club legend DJ Class with additional vocals (shouting) from the one and only Lil Jon. This is our jam right here! (Via Emynd)
Pitbull and Lil Jon done did it again. On new track "Crazy" they sample yet another electro/techno anthem, this time they use Federico Franchis "Cream" which happens to be one of our favorite jams. Crazy indeed but we have a feeling this will pop off in the clubs…
Pitbull (ft. Lil Jon) – Crazy (YSI)


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Wynton Marsalis
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con struct
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Join Date: Apr 2009
Location: Lumpen post-industrial district
Posts: 2,072
Re: Wynton Marsalis
Originally Posted by
I know you'll probably like this Jay but I'll ask anyway. Why should people be looking for "innovation" in an art form that is 100 years old? I just don't hear it happening and if it is I am asking the question, where? please inform me. That doesn't mean I like what I hear any less. It doesn't man that I don't like to be challenged with what I hear. I could roll off 20 pieces of music, 10 of which would be radically innovative, and for me, I wouldn't love them any more than the other 10 that weren't. In 1913, Stravinsky was writing The Rite of Spring and Ravel was writing his neo-classical Le Tombeau dun Couperin. In ten years, Stravinsky was a neo-classicist. Ravel never became an expressionist. But you now, there something wrong with me if I think like that. Not everyone is going to innovate.
I wonder that myself at times. No, I don't see it happening but maybe it is happening, it's just that it hasn't blossomed yet, I don't know.
What's troubling to me is the adherence to functional harmony, to the old standards and to the tried-and-true chord-scale approach to improvising that's taught in every jazz program in every school everywhere.
It could well be that to expect the sort of innovations that rocked jazz in the past is to be chasing rainbows. You can't get any more "inside," and I don't see how you could get any more "outside" either.
When I see jazz performed I enjoy the musicianship but to be honest I'm never hearing anything new. Is it possible to do anything new and still call it jazz? :)
Jazz is a funny thing that way. It's so codified, you know? Everyone knows what it sounds like. But I guess all genres of music are that way.
Call me J
con struct
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The 2nd National ACI conference on Planning, Building and Operating Successful Proton Therapy Centers, co-sponsored by the National Association for Proton Therapy, was held February 22-24, 2012 at the KingsMill Resort & Spa in Williamsburg Virginia. The event nearly tripled the previous year attendance, demonstrating the burgeoning interest in this nascent industry. This event is the foremost gathering for executives who run or want to run one of the most advanced, and expensive, medical technologies on the planet.
The event included a tour of the newly opened Hampton University Proton Therapy Institute, the largest of the free-standing proton centers in the U.S. The conference featured many of the most highly regarded experts in the proton community, including; Lynda Mischel, Chief Operating Officer
UNIVERSITY OF PENNSYLVANIA HEALTH SYSTEM; Donald Kooy, President and CEO, MCLAREN REGIONAL MEDICAL CENTER, Michael E. Mermall, Partner, DRINKER BIDDLE & REATH LLP, Les Yonemoto, MD, Radiation Oncologist, PROTON KNIFE, LLC, Cynthia Keppel, PhD, Scientific and Technical Director HAMPTON UNIVERSITY PROTON THERAPY INSTITUTE and more. The event was chaired by Leonard Arzt, Executive Director of the National Association for Proton Therapy
Proton therapy, which uses high-energy protons to eradicate cancer, allows more precise radiation dosage than traditional radiation therapy. This is generally thought to be most beneficial for pediatric patients with complicated brain or spine tumors, and for whom limiting radiation dose is critical. Some studies hint that it might also help curb side effects of radiation treatment for prostate cancer patients, who make up the bulk of people treated by this modality.
There was overwhelming interest for the pre-conference workshops lead by Philips, VOA and Varian with a majority of delegates in attendance the day prior to the general sessions.
The event was overwhelming rated very highly by a majority of delegates, many citing the quality of speakers, outstanding tour, and excellent location.
This event will be held February 20-23, 2013, location to be determined, shortly.
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Watch some dude hit a golf ball off Mount Kilimanjaro
At nearly 20,000 feet above sea level, the Uhuru Peak on Mount Kilimanjaro in Tanzania is the highest spot in Africa and the highest free-standing mountain in the world. People come from all over the world...
Monday, 10/13/2014 at 9:01AM
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7 countries you might be surprised to learn have professional golfers
By Luke Kerr-Dineen If you've been following the Women's British Open, you'll know that history is being made this week. Laetitia Beck, a 22-year-old from Caesarea, Israel, will become the first Israeli golfer ever...
Wednesday, 7/9/2014 at 11:23AM
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July 2010
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Hotels in 79562 - Tuscola TX
Only hotels in 79562 zip code are listed below. Search for cheap and discount hotel rates in Tuscola, TX for your upcoming leisure or conference / group travel. We list the best 79562 hotels and motels so you can review the Tuscola hotel list below to find the perfect lodging. Hotels in Taylor county and area code 325 are also listed.
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Hold down Control (PC) or Command (Mac) key + mouseclick to select more than one option
|Avg. Dinner Entrée
|Greater than $25
|$18.01 - $25
|$12.01 - $18
|$7.01 - $12
|Less than $7
Posted by Eric on 12/22/2010
I stopped by tonight for a glass of wine. Halfway through my glass of wine(10 minutes or so), the server dropped the bill on my table saying thanks sarcastically. A couple minutes later, said server comes back around and says are you going to pay? I've been around the trendy exclusive spots. You can be as exclusive as you want to be, rudeness does not improve your standing as a restaurant. It makes you look bad.
Posted by Anonymous on 11/08/2010
Went here this past friday evening and paid so much for nothing. I ordered the scallops- which I received three of for a main meal- I don't eat much, but that's the equivalency of an appetizer is most restaurants. My boyfriend had the braised short ribs which were so salty, I can't believe he actually ate them. The place is nice inside- looks like a wanna be south beach, but 90.00 for a glass of wine and two entrees that was unappetizing was not worth it.
Posted by anonymous on 10/22/2010
I don't know what all these people are talking about. They must be used to Applebees or something horrid like that. The House is one of the most chic, cozy and delightful restaurants in NYC. The food is incredible and the staff is amazing. The portions are just perfect and they shouldn't change a thing.
Posted by mac on 10/08/2010
I can't believe I just spent so much money on such a completely unremarkable meal...
Posted by Mark on 09/12/2010
This place had shockingly bad food. Greasy and wildly overpriced for the smallest portions I've ever been served. I wanted to ask the waitstaff if they were kidding. Service was fine as was the atmosphere.
Posted by CM on 08/27/2010
I've been to The House many times for drinks and always wondered why I had never eaten there. Last night I found out why... First we had the trio of hummus, tzatziki, and avocado. I've literally had far superior versions of all these dishes from a bodega. Even though I was starving this was so inedible I couldn't touch it. The food was so bad I opted not to have an entrée. My partner then had the fish, which was so overcooked and over salted he couldn't eat it either. I've never written one of these reviews before (an a native Manhattanite) but I was so shocked by the poor quality of the food (which is also very overpriced) that I had to speak up. Do not eat here. You will be disappointed. The space is lovely for drinks, but after that subpar meal I'm not even suer I'll go back for that!
Posted by paula on 08/08/2010
what a beautiful restaurant. the food was so so. the waiter didn't offer a cocktail, had to ask. menu is very limited. would go back for drinks.


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When it comes to luxury brands, it's all about being seen in the right places: such as between the sheets of the top luxury and lifestyle magazines, or on the best looking websites on the internet.
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The Sennheiser SH 350 IPchannels perfect quality sound to both ears for sustained levels of concentration during conversations. A stylish, high-quality solution for professionals who value premium comfort and superlative speech quality.
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Posted at: 01/27/2013 2:56 PM
Updated at: 01/27/2013 7:58 PM
By: Justin Granit
No. 2 University of Rochester basketball team beat Brandeis 69-65 in UAA conference play. John DiBartolomeo scored 36 points. The U of R is now 18-0 (7-0).
With the win, Rochester is in line to become the No. 1 ranked team in the country. No. 1 St. Thomas lost earlier in the week at Concordia-Moorhead.


text: Prev | Next Purchase this photo Marcus Constantino/For The Herald-Dispatch Wayne's Payton Fetty (27) runs to third base during the West Virginia class AA Region IV, Section IV sectional championship game between the Wayne Pioneers and the Mingo Central Miners at Wayne High School, Monday, April 29, 2013, in Wayne, W.Va. Gallery: Wayne softball wins sectional Apr. 30, 2013 @ 07:05 AM The Herald-Dispatch / 2015 The Wayne softball team beat Mingo Central, 10-0, in the West Virginia class AA Region IV, Section 4 sectional championship Monday. ()


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Charlie Ergen, the billionaire founder and chairman of Dish Network, has made a $12 billion bet on sports and spectrum.
Ergen has been buying up spectrum for years–most recently paying $1.56 billion for H-Block spectrum in 176 U.S. markets–and cutting deals with Walt Disney Walt Disney for programming with the idea of winning the race of offering over-the-top programming. As media guru Chris Bevilacqua explains during a segment of the YES Network's Forbes SportsMoney below, the crux of the Disney deal was to get ESPN ESPN.
But time may be running out for Ergen. Over-the-top programming is still a few years away because providers still need to obtain a critical mass of content. Dish Network has $12.6 billion of debt stacked on top of just $997 million of equity. And Ergen is currently embroiled in a nasty legal fight over $1 billion with billionaire Phil Falcone, whose Harbinger Capital Partners owns bankrupt wireless company LightSquared.
Exit strategy? Ergen could merge with his bigger rival, DirecTV, or perhaps be purchased by Google Google, which is reportedly interested in entering the sports game big time.


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Sarah Palin probably won't run for Senate, but Sen. Mark Begich, D-Alaska, likely doesn't mind the chatter that she's considering joining the race.
Few Republicans -- other than perhaps Michele Bachmann -- engender a more viscerally negative response among Democrats, or a more positive response among the Tea Party base, than Palin does. That makes her a valuable commodity both to Fox News and, counterintuitively, Democratic politicians. Sen. Debbie Stabenow, D-Mich., sent out an email pitch Wednesday with the subject line "Senator Palin?", a thought sure to give nightmares to many on the left. Stabenow's email warns that Begich will be a "top target" and "the SuperPACs and right-wing activists will pour millions of dollars into Alaska to finance [Palin's] campaign."
Stabenow asked for $10 donations to help Begich ward off Palin's bid. That money will spend just as well when Palin inevitably rules out a race.
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Margaret Brooks 5805 Mackall Rd Annapolis, MD 20685 (443)555-2974 firstname.lastname@example.com Objective: To continue expanding my extensive career as a Personal Trainer in the fitness industry . Experience: Dec 2010 - Krav Maga New York, Somers, NY Aug 2011 Assistant Instructor Assistant instructor responsible for teaching Krav Maga self defense techniques and Krav Maga history and discipline to children ages 5-12. Also assist in training adults. Responsible for cleaning the facility twice a week and keeping equipment organized. Aug 2010 - Stop-n-Shop, Somers, NY Dec 2010 Stock Clerk Responsible for the stocking and maintenance of the Dairy department. Duties included receiving trucks of merchandise, loading U-boats destined for the customer shelves, leveling the refrigerated cases for visual appeal, cleaning of the back room and customer service. Apr 2008 - Yorktown Total Fitness, Yorktown Heights, NY Aug 2008 Front Desk Clerk Main duties included signing in existing members, collecting monthly dues, signing up new members, selling clothing, merchandise and nutritional supplements and answering calls. Responsible for cleaning up the front area and keeping the waiting area clean. Education: Lakeland High School, Shrub Oak, NY Graduated June 2010, HS Diploma attained ACT Certification CPT Program Skills: CERTIFICATIONS Sept 2011 CPRed (American Heart Association) CPR/AED Certification – 2 Year
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Hang tight!
Recipe by Kim
"This salad is great at cookouts and is quick to fix! If salad is too dry or gets too dry add a little milk."
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1 (15.25 ounce) can
whole kernel corn, drained
1 (15.25 ounce) can
white corn, drained
tomatoes, chopped
1/2 (15 ounce) can
sweet peas, drained
cucumber, diced
purple onion, diced
3 tablespoons
1 cup
salt and pepper to taste
I love it when people change a whole recipe, including ingredients, and then give it three lousy stars. Sheesh, if you're going to do that, send in your own recipe!
As written I have to give this recipe 3 stars. I liked the basic idea, but I had to change the ingredients. First of all, I used fresh corn, cooked and cut off the cob. I used frozen peas instead of canned because....Yuck! Canned peas are icky. I used grape tomatoes, cut in half instead of large tomatoes to cut down on the liquid, and seeded the cucumber for the same reason. I also made a vinaigrette instead of mayonnaise. My husband said he didn't think he would like a corn salad, but he really liked this one. Although I made several changes, I thank you for the recipe!
36 Ratings
This is a fast salad that is great as a side dish. I have served it twice now, followed the recipe exactly and both times it was a hit. Everyone went home asking for the recipe.
A good way to get your veggies. I used frozen corn and peas instead of canned. I substituted scallions for onion and orange bell pepper for pimentos.
I had a corn salad from a small town grocery store deli several years ago that was so delicious, but have never found it anywhere else or was able to recreate it. When I found this recipe, I thought I'd give it a try and let me tell you, this is it! The only change I made was leaving out the peas as the salad I had didn't have them and I don't care for them. Delicious! You have to try this, it is perfect for summer and so easy to make.
This was delicious and a perfect substitute for a lettuce salad. I used Green Giant Steam Crisp Super Sweet White Corn (11 oz.), Green Giant Steam Crisp Super Sweet Yellow and White (11 oz.), Le Sueur Very Young Small Sweet Peas, a small jar of pimientos, the 2 tomatoes, and cucumber and green onion to our taste preference. I used only 1/4 cup light mayonnaise, which was perfect for this amount of vegetables. It makes a lot!
Left out the pomento's. It was awsome! I served it as a dip with tortilla chips. Everyone liked it! Especially those that dont care for tomato base salsas.
This is excellent! I scaled it X3 for 40 servings (but just used one can of peas). Got lots of compliments on it. I wil definately make it again.
* Percent Daily Values are based on a 2,000 calorie diet.
Kim's Summer Corn Salad
Serving Size: 1/12 of a recipe
Servings Per Recipe: 12
Amount Per Serving
Calories: 209
Calories from Fat: 138
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