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1,892pages on
this wiki
this wiki
Welcome to the Metal Gear Wiki
The Metal Gear Wiki is a collaborative encyclopedia for everything related to the Metal Gear series. There are 1,892 articles and growing since this wiki was founded in August 2005. The wiki format allows anyone to create or edit any article, so we can all work together to create a comprehensive database for the Metal Gear series.
|Canonical games
|Metal Gear
|Metal Gear 2
|Metal Gear Solid
|Metal Gear Solid 2
|Metal Gear Solid 3
|Portable Ops
|Metal Gear Solid 4
|Peace Walker
|Metal Gear Rising
|Ground Zeroes
|The Phantom Pain
|Non-canonical games
|Snake's Revenge
|Ghost Babel
|Metal Gear Acid
|Metal Gear Acid 2
|Updates, remakes, and collections
|The Twin Snakes
|20th Anniversary
|The Essential Collection
|Portable Ops Plus
|Acid Mobile
|HD Collection
|Snake Eater 3D
|The Legacy Collection
|Metal Gear (NES)
|Digital Graphic Novel
|Metal Gear Arcade
|Social Ops
Release dates
|Upcoming release dates
|Recent releases
- Helping out
There are many ways people can help out the Metal Gear Wiki, ranging from adding high-quality screenshots pertaining to the games to improving stub articles on the wiki.
- Registering
For viewers who want to contribute, making an account is simple. Just go here and fill in the required spaces and there you go; you'll be an editor of the Metal Gear Wiki.
- Adding content
Latest news
- On March 4, 2015, it was revealed that Metal Gear Solid V: The Phantom Pain will be released for the PlayStation 4, Xbox One, PlayStation 3, and Xbox 360 on September 1. The PC version will be released on September 15.
Did You Know
- ...that Cécile Cosima Caminades' name and appearance is based on Cécile Caminades, the former Communications Manager of Konami Paris?
- ...that completing all the VR missions in Metal Gear Solid: VR Missions will unlock a promotional image of Metal Gear RAY?
- ...that GW's AI possesses a parallel processing capacity of 980 trillion hammets?
Gaming Wikis


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Update: Police appeal as 56-year-old woman remains in critical condition after being rescued from River Exe in Exeter
Posted: May 12, 2014|
Exeter police have issued an appeal for witnesses after a woman was rescued from the fast flowing river Exe.
Shortly before 9.15am on Sunday , police and other emergency services were called to the river near the Port Royal public house after a woman was reported to be floating in the river.
At 9.34am a fire service officer entered the water and pulled the woman ashore.
The 56-year-old woman was taken to the Royal Devon and Exeter Hospital where she remains in a critical condition.
She is described as white, of slim build, with ginger hair. She was wearing a grey jacket, blue jeans and black boots.
Local resident Marion Snow said: "I was walking my dog along the river when I saw a man throw a life ring into the water.
"I thought at first it was a dog in the water but then I saw it was a woman. She was face up with her mouth open and bubbles coming out of her nose.
"She did no make any attempt to grab the ring and the police arrived.
"It was terrible and I have kept thinking about it. I couldn't sleep all night."
Anyone who saw the woman in the area of the Port Royal public house or Exeter Quay, prior to entering the water, is asked to call police on 101 quoting log 228 of 11 May.

subset: commoncrawl


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|Kids Craft: Peek-a-Boo Apples
Event Type: Children's Program
Date: 9/20/2013
Start Time: 3:30 PM
End Time: 4:30 PM
Celebrate the season with this festive apple craft! For ages 3 & up. Register in person, online at oppl.org/events or by calling 708.386.9032 beginning September 6.Library: Oak Park Public Library Dole Branch
Location: Meeting Room - Dole Branch
Registration Ends: 9/20/2013 at 3:00 PM
Contact: Dole Branch Library
Contact Number: 708.386.9032
Status: Closed
We're sorry. The registration deadline was 9/20/2013 at 3:00 PM.


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ABCbodybuilding - View Single Post - Daily Devotional
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Join Date: Nov 2008
Location: Reno, NV
Posts: 5,162
Oct. 14
Lessons From A Fence
October 14, 2012
Read: Matthew 7:21-29
Whoever hears these sayings of Mine, and does them, I will liken him to a wise man who built his house on the rock. Matthew 7:24
When a section of fence around our house blew down in a howling March wind, my first reaction was to blame the man who built it for me only a few months before. On further reflection, I knew the fault was mine. As the fence was nearing completion, I told him there was no need to replace four existing posts from the previous fence with new ones set in concrete. Just attach the new fence to the old posts, I said. It will be fine. It wasuntil the winds came. Jesus told a powerful story to emphasize the importance of building our lives on the solid foundation of obeying His Word. Whoever hears these sayings of Mine, and does them, I will liken him to a wise man who built his house on the rock: and the rain descended, the floods came, and the winds blew and beat on that house; and it did not fall, for it was founded on the rock. But everyone who hears these sayings of Mine, and does not do them, will be like a foolish man who built his house on the sand (Matt. 7:24-26). When the wind and rain beat against the houses, only the one built on the rock remained standing. Hearing Gods Word is essential, but doing what He says is the key to weathering the storms of life. Its never too late to start building on the Rock.
The wise man builds his house on rock Instead of sinking sand; For when the storms of life descend, That house will surely stand. Sper
When the world around you is crumbling, God is the Rock on which you can stand.
"Whatever you do, work at it with all your heart, as working for the Lord, not for men"
Colossians 3:23
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Have you ever had a really great beauty makeover at a counter/store?
Have you ever had a really great beauty makeover at a counter/store? Have you had any bad experiences?
Best was definitely by Nicholas Lujan who works for Make Up For Ever, and it was at the MUFE Boutique at the Venetian Sephora. I believe he's based out of NYC now doing stuff for MUFE, but he was fantastic. Easily best ever makeover I've had. There was one where they over-drew my lips, didn't blend the eyeshadow, put on lashes that were half-on, and that was pretty disastrous.
Discussion and debate are highly encouraged, and we expect community members to participate respectfully. When asking a question, please check the FAQ section (above) for information about purchasing, price, dupes, and the like. If you have general feedback or need technical support, please contact us.
Comments that include advertisements, self-promotion, insults, etc. may be in violation of our comment policy and subject to deletion. Please see our comment policy for more information.


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Posted on 21 February 2014
- 15:05
If you are travelling by train for our Premier League match against Norwich City at Carrow Road – kick-off 4pm – supporters are advised to travel via Cambridge to Norwich where an enhanced train service will be in operation.
Due to these engineering works, fans are advised to leave extra time to complete your journey.
Further details are available at http://www.greateranglia.co.uk/travel-information/journey-planning/service-alterations/details?ew_id=953
22 July 2015
20 July 2015
27 March 2015
View mobile site
© Tottenham Hotspur Ltd 2014. All rights reserved.
All photography copyright Action Images plc (unless otherwise stated)


text: On November 6, 2011, elite students of Pace Universitygathered to be inducted into the prestigious Golden Key International Honour Society. With their family and friends in attendance, the students became official members during a fine ceremony honoring their achievements. After the distribution of certificates, elections were held for the new E-board. Once that piece of business was concluded, students joined their family and friends for some delicious food and beverages to celebrate the day.


text: Prev | Next Purchase this photo Bishop Nash/For The Herald-Dispatch Cabell Midland's Karlee Alderman (11) moves the ball upcourt against Huntington on Friday, Feb. 7, 2014, at Huntington High School. Gallery: Huntington rolls over Cabell Midland, 46-30 Feb. 07, 2014 @ 10:55 PM Bishop Nash The Huntington Lady Highlanders cruised past the Cabell Midland Lady Knights, 46-30, Friday night in Huntington. ()


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Join Elaine Viets as she speaks and signs her newest 'Mystery Shopper' novel, Murder Is a Piece of Cake. Mystery shopper Josie Marcus is thrilled to be getting married, but Josie will have to catch a murderer before she tosses the bouquet!
You may know about Goldilocks and the three bears — but have you heard of Goldilocks and the Three Dinosaurs? Let's laugh along with Trish as she reads Mo Willems' newest tale.
Sophie's Tales: Overcoming Obstacles is a story about a little dog with hearing loss who uses a cochlear implant to hear. Sophie makes new friends and shares that winning isn't the only way to have fun! This is a featured event for the JCC ECC bookfair.
Join us as Trish reads Fancy Nancy and the Posh Puppy by Jane O'Connor. Fancy Nancy's family decides to get a dog!


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Latino Life
Elaine Ayala comments on Latino news, cultura y más.
Posts filtered on Tag
Jill Biden to speak at women's event Oct. 22 in S.A.
The rest of the lineup is just as impressive with Gloria Steinem, Eva Longoria, Dolores Huerta, Diane von Furstenberg and Sister Rosemary Nyirumbe from Uganda. [Read More]
Eva Longoria launches Latino Victory PAC
Congressman Pete Gallego is among the first endorsements the PAC announces. [Read More]
Eva Longoria funds UCLA Latina education study
The Civil Rights Project/Proyecto Derechos Civiles at UCLA produced the report, "Making Education Work for Latinas in the U.S." [Read More]
Eva Longoria, Tigres will top Hispanic Heritage honorees in D.C.
Eva Longoria, one of the most notable Latina activists in the United States today, will receive the Hispanic Heritage Foundation's community service Award [Read More]
Spanish for soul, ALMA Award nominees are announced
Prime-time awards show on NBC is the only one to focus on Latinos in Hollywood [Read More]
'Glory' leaves big hole in its slice of Mexican history
The Cristeros fought to the death for religious freedom in the face of fierce restrictions by President Calles. [Read More]
Longoria options rights to 'A Class Apart'
The documentary centered on Hernandez v. Texas, brought by the legendary San Antonio attorneys Gus Garcia and Carlos Cadena, who won the case before the Supreme Court. [Read More]
Alma Awards back on the air this year on NBC Sept. 16
Fans can vote online for their favorite movie, TV and music stars. [Read More]
MALDEF's big gala has several S.A. links
San Antonio's Nina Perales' father Cesar A. Perales will be honored for lifetime achievement. [Read More]
National Latino museum a bit closer to reality
A federal bipartisan committion sends its final report to Congress, recommending the building of the National Museum of the American Latino on the National Mall. [Read More]


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Search VIFF Films
Find Your Film
Use our search function below to sort the films by their English title, the names of directors, or their country of origin. Films can also be filtered by series, genre, or Vancouver International Film Festival venue. You can also browse by film series by visiting our Browse By Series page.
The majority of films in the Vancouver International Film Festival are unrated and you must be 18 and purchase a $2 VIFF membership to attend a screening. However, a selection of films are open to all ages.
Before you make your purchase, please note The Rio is 19+ exclusively with the exception of the rated High School Screenings at this venue.
Yamada Ryoji
A seriously weird animation which plays on two meanings of "wait": "wait on (someone)" and "to wait (for something)." Yamada himself says "it might be a criticism of nuclear power." Award for Excellence, Image Forum Festival 2014. Tony Rayns
Adilkhan Yerzhanov
Decamping to the countryside, three siblings discover an alcoholic squatter holed up in their late mother's cabin. Given that the local police chief is the intruder's brother, an escalating blood feud becomes unavoidable. "Kafka meets Kaurismäki… [Adilkhan Yerzhanov's film] is a caustic critique of small-town corruption and croneyism in contemporary Kazakhstan. It is also poetic, surreal and visually arresting."—Hollywood Reporter
Heather Young
As a woman and her dog go about their day, our understanding of their relationship shifts dramatically.
Lily Yu
One morning, the pressure finally gets to a high-school student.


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I (seemingly) found a solution to my question at http://answers.google.com...threadview/id/779573.html - but when I tried that, the result doesn't look so hot... the stationery (a PDF file that looks great by itself) I was using looked kinda crappy (fuzzy) in the resulting PDF when pdfedit995 (http://www.pdf995.com/pdfedit.html) printed the text on it (from Word). The text itself (in the resulting PDF) looks very clean... strange.
Any ideas?


text: It apparently became bad enough that select forums had to be switched over to Read Only mode for improved accessibility, Zarhym says. I assume this is a response to very, very seriously increased traffic on the official forums. The forums (and the official website) went up and down throughout maintenance today, keeping many players in the dark about what was going on. Communication with the playerbase is one of the primary roles of the community managers, and it's really hard to do that when the forums are in the state they were. I'm a regular poster on my realm forums and it's a bit jarring not being able to post there, but it's for the best.


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Every single of our cakes have a special design. Wether you need it elegant, tall, unique or maybe a cake that screams attention we do it. Of course they all taste delicious, we only use the best fresh raw materials.
Cupcakes is our middle name. You probably read about our cupcakes, or maybe even seen us on tv. All flavors, all sizes, all colors! Nothing is impossible. If you have a birthday and can't decide between a cake or cupcake, why not both?! See our pictures below and you see what we mean :)
We are one of South Floridas largest makers of wedding cakes. We supply numerous banquet halls, wedding consultants and catering firms with our wedding cakes in Miami, Broward and Palm Beach counties. They need stunning design, top quality, top ingredients, and on-time delivery - don't you?
We offer a wide assortment of desserts. Among our customers favorites are Key Lime Pie, Apple Pie and Original Tiramisu. We sell by the piece over the counter or we can cater to your restaurant or any event in South Florida. We can even decorate your company logo on many of our desserts.
We make the cutest cake pops too! In beautiful colors and delicious tastes dipped in delicious chocolate, vanilla or red velvet. Cake Pops can be eaten alone or as decorations for our designer cakes. We can make them in almost any color, shape or size.
We deliver handmade designer cakes to Miami, Ft. Lauderdale, Palm Beach, Pembroke Pines, Hollywood and Weston. Call us to inquire if we deliver to your area in South Florida. We have contract with many banquet halls and caterers. Call Mery to discuss how we can increase your sales of pastry.
Marriott International, Inc., Fort Lauderdale, FL
Luisa and Fernando Goicochea, Key Biscayne, FL
We create custom cupcakes for all occasions as birthdays, baby showers, weddings and religious events as well as corporate gifts with your logo.
Tons of delicious flavors such as chocolate, vanilla, Oreo, red velvet, dulce de leche, guava with cream cheese, coconut, marble, peanut butter, strawberry, banana, Nutella, key lime, carrot, cream cheese, apple and much more...
A beautiful custom designed cake worthy a princess!
A custom made cake with extensive decorations in your choice of silver, gold or pink.
For larger parties we have two- or three layer cakes available in same design.
Rent a layer stand for a truly professional presentation.
A themed birthday cake with one dozen of matching cupcakes presented beautifully in three layers.
Delicious custom made cake suitable for 12 portions.
One dozen of matching cupcakes, additional quantities available.
Rent a layer stand for a truly professional presentation.
Our gourmet cakes are big favorites and made fresh everyday, please call in advance to reserve yours.
Dulce de Leche with Almond Cake.
Premium Vanilla & Strawberry Cake
Creamy Ghirardelli Chocolate Cake.
Executive Pastry Chef
As an owner, I'm in charge of making a close design process that will help create the dream cake of every customer. Specialized in making spectacular, traditional, extravagant or modern cakes, cupcakes and gourmet pastries. Credited at Le Cordon Bleu College of Culinary Arts, Miami, Florida.
Pastry Designer. Works close with executive chef from design to implementation. Graduated at Le Cordon Bleu College of Culinary Arts, Miami, Florida.
Pastry and Bakery Chef works directly with head chef. Assists customers with choosing and creating their dream cakes. Graduated at Le Cordon Bleu College of Culinary Arts, Miami, Florida.
Our creativity starts with you. We sit down and discuss what your vision, amount of guests and budget. Of course you can also just select from our wast menu.
All our personell are graduated from Le Cordon Bleu. We are the bakery with the highest percentage with culinary graduated personel in South Florida, 100%!
We use the absolutely best raw materials available. When making our desserts and other pastries we slow bake it. All our pastries are guaranteed delicious!
Merylu custom made desserts are the best in South Florida! On the day of the event we can either deliver the desserts or you can pick it up at a time suitable.
Delicious Spanish Alfajores
Almond cookies filled with dulce de leche, strawberry or cherry
Linzar cookies filled with dulce de leche, strawberry or cherry
Mini croissants filled with chocolate, dulce de leche or pastry cream
Super premium Ghirardelli brownie bites
Mini Eclair filled with pastry cream and topped with chocolate and caramel
Macaroon and Merengues
Petit Fours, filled and decorated mini cakes
Cakepops and Cake Balls
Cupcakes in your preferred taste in jumbo, large, medium, small or mini size
Exquisitely decorated cookies


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Audio Tours
This Official Harvard self-guided tour begins at the Smith Campus Center in historic Harvard Square, Cambridge, Massachusetts. The audio tour is read by current Harvard students and is composed of tracks describing landmarks throughout the Harvard Yard, providing a history of the university, general information, and a unique view on the student's individual experience! The tour is completely free of charge.
We welcome your ideas and feedback as we continue to improve and develop this tour. For those who have an opportunity to visit Harvard, tours regularly leave the visitor center allowing visitors to see these amazing landmarks in person.


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Posted 1 year ago
By Post Staff
The U-S Forest Service is hosting a public input and information meeting Thursday in Chadron on the Pine Ridge Landscape Restoration Project, a proposal to improve forest and rangeland health in Dawes County.
The meeting runs from 3:00-7:00 pm in the Upper Niobrara-White Natural Resource District Offices at 430 E. 2nd Street. Acting Pine Ridge District Ranger Tim Buskirk says anyone should feel free to come in anytime.
((Tim Buskirk
The Pine Ridge Landscape Restoration Project is intended to help federal land south of Highway 20 between Chadron and Crawford recover from a series of natural disasters highlighted by the devastating wildfires of 2006 and 2012.
The proposed plan calls for removing "dead and down" timber from the fire areas, clearing roads and riparian areas of debris and timber litter from last fall's blizzard and other storms, and thinning green timber to establish healthier stands and reduce the chances of future major fires
Buskirk says the meeting is a chance for shareholder groups and individuals to learn about the proposal, look at maps with Forest Service staffers, and offer both comments and suggestions.
The Forest Service is currently in a formal 20-day comment period, the only one for this phase of the project. Buskirk says there will be similar comment periods later in the process open to everyone, but only those who give input now will be able to challenge the final plan..
There will be online and printed copies of the proposal and maps available to the public…but there's no timetable yet for that.


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|Customer Login Contact Us Join Mailing List
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contact us
Follow Us:
Compliance 360 will be hosting a series of free educational webinars. Please register below to attend. NOTE: All registrations close one hour prior to the start time.
Upcoming Webinars
Global Compliance: China's Anti-Trust Laws | A Practical Guide
Two Midnight Rule: Updates and Lessons Learned | Plus Probe & Educate
On-Demand Webinars
Compliance & Ethics Programs: Leveraging Cloud-based Technology for Regulatory Change Mgmt
Creating Behavioral Changes Within Your Compliance Program
Medical Claims Audits and Denials: Top Things to Know to Get Your Claims Paid!
Shades of Gray: Conquering Complexity and Uncertainty in the World of Compliance & Risk
CFPB's Enforcement Push on Mortgage Advertising Regulations
What's the Rap on UDAAP?
Developing Policies and Documents for a More Effective Compliance Program (Healthcare focused)
Corporate Governance, Enterprise Risk Management And the Expanded Role of the Compliance Officer in the Board Room
Holding Everyone Accountable for Their Part in the GRC Process
RESPA Section 8 Enforcement Trends: The CFPB sets its sights on Marketing Services Agreements
Social Media and Advertising Quality Control
Addressing Two Midnight Rule Documentation Challenges:
Plus! Findings from MAC Probe & Educate
E.H.R. Management: Mitigating Risks When Using Scribes
OIG Workplan: Prioirities for 2015 (sponsored by GA HFMA)
Corporate Governance Disclosure; NAIC Updates and New Rules
Using GRC Technology to Ensure Compliance with HIPAA
Medicare and Medicaid Audits: The Wave of the Future
Date: Wednesday, November 19, 2014
ACA and Health Insurance Exchange Litigation: Lessons Learned and Emerging Trends
UDAAP: The Latest Developments and Best Practices
Market Conduct Exams: Triggers, Trends and Top Findings
The Role of ORSA in Modernizing Enterprise Risk Management: Transitioning from Compliance to Value - An Introduction
Consumer Financial Practice Bureau (CFPB) Compliance Risk between Hospitals and Vendors
Building an Audit Workplan - Beyond Risk Assessments (Healthcare)
ALL PAYERS ARE AUDITNG! It's All About the Patient's Story & Documentation Plus New! Transmittal 534
Building a Case for Your Policy Management Program
Preparing for a CFPB Mortgage Lending Examination
The Credit and Collections Industry and the Consumer Financial Protection Bureau
Exploring an Integrated Clinical Documentation Improvement Program
Consumer Complaints and the Consumer Financial Protection Bureau
The Affordable Care Act's Impact on Reimbursements and Steps You Can Take to Mitigate the Risk
Managing Risk in Financial Institutions' Third-Party Relationships
OIG Workplan: Compliance Priorities for 2014
CFPB Enforcement Update: Takeaways and Future Areas of Focus
Mastering the (continuing) Chaos of RAC and MAC Audits
Healthcare Reform & Insurance: Reimbursement with the New Qualified Health Plan Enrollees
Attacking the Two Midnight Rule:An Operational Approach
Mortgage Rule Update: Navigating the Complex and Changing Regulatory Environment
2014 OIG & DOJ Enforcement Priorities: Hot Topics to Review for Your Compliance Program
Denials Management Updates | Throwing ICD-10 in the Mix
Practical and Effective Strategies for Managing Conflicts of Interest
How the New Guidelines for Enterprise Stress Test Can Be a Powerful Tool
Mastering the Chaos of Audits with Day Egusquiza:
Recent Updates, Hot Issues, and Lessons Learned
ERM + FSGO - A Powerful Combo to Keep Your CEO Out of Jail!
Basel III: The Changing Capital Landscape
CFPB COMPLIANCE | Interaction Between Compliance Assessments and Systems Issues
Implementing a Premiere P O L I C Y Program: Step 2 | Organizing the Policy Management Lifecycle
Omnibus, Business Associates and Breaches: Innovative Approaches for Identifying and Mitigating Risk
Compliance Pitfalls & Pathways | Current Trends in Predictive Modeling/Analysis
UDAAP: Practical Guidance for Navigating Compliance & Risk Management Challenges
You've Identified a Corporate Risk - Now What?
Implementing a Premier P O L I C Y Program
Pearls of Wisdom II: Recent Updates and Guidance from the Ever-Changing World of RAC, MAC, Medicaid, and the OIG
ZPIC Audits: Recent Trends and Best Practices to Minimize the Risk
Protecting Your Revenue: Current Trends and Best Practice Recommendations
FCPA Guidance: Practical Recommendations for Ensuring Compliance
Critical Illness Insurance Compliance: A Practical Guide to Success
Compliance Program Effectiveness: What Will the Fed Prosecutors Look For?
Understanding UDAAP: Know Before You Loan
Denials Management: Current Trends and Best Practices Recommendations
Congressional Oversight Priorities and Perspectives: CMS Oversight and Contractor Coordination
Regulatory Compliance Priorities and Preventive Strategies for Managed Care
Pearls of Wisdom: Recent Updates and Guidance from the Ever-Changing World of RAC, MAC, Medicaid, and the OIG
Insurance Advertising Compliance - A Practical Guide to Success
Personal Risk and the Chief Compliance Officer: How to Avoid Regulatory and Civil Liability
Wage and Hour Compliance: Assessing the DOL's Enforcement Initiatives for 2012
How to Prepare for CMS' 60-Day Overpayment Refund Rule
Minimizing the Compliance Risks of Proactive OCR HIPAA Audits
Ensuring Compliance with the New HHS Conflict of Interest Regulations
Old Data Learns New Tricks: Managing Patient Privacy and Security on a New Data-Sharing Playground
Utilization Management - Patient Status Challenges and Better Practice Ideas to Reduce Vulnerabilities
Enterprise Risk Management: Addressing the Growing Expectations for Risk Oversight by Executives and their Board
Medicare Compliance Challenges in the Age of Healthcare Accountability
Wage and Hour Compliance: Mitigating Risks in a New Era of Enforcement
Best Practices for Adopting a Risk Management Approach for NCAA Compliance
Regulatory Reform and the Emerging Role of Risk Management for CCOs
RAC and MAC Updates Plus Appeals Strategies
Congressional Oversight Priorities and Perspectives on Fraud and Abuse
Stark Compliance: Addressing the Operational Challenges
Meaningful Use and Compliance - An Operational Guide to Success
Dodd-Frank Act: Addressing the New Regulatory Compliance Challenges
Strategic Risk Oversight - Identifying & Addressing Key Challenges to Success
A Practical Guide to Stark Compliance: Part 2
A Practical Guide to Stark Compliance: Part 1
How to Develop and Manage Compliance-Related Policies (for Healthcare)
ICD-10 Changes Everything - An Operational Guide to a Successful Transition
Healthcare Reform: Trends in DOJ Fraud Enforcement
Medicaid RACs Are On the Way: Tips & Guidance to Protect Your Payments
RAC APPEALS: Latest Recommendations for Protecting Your Payments
Medicare Part D Compliance Audits - An Operational Guide to Success
The Pharmacy 340B Drug Discount Program - Compliance Strategies for Covered Entities
Measuring the Effectiveness of Your Compliance Program - An Operational Guide
Practical Techniques for Managing Third Party Risk
Transparency What It Really Means in the Wake of Health Care Reform (Self-Disclosure)
RAC Audits: Updates, Audit Findings and Best Practices to Reduce Vulnerabilities
A Guide to the CMS Medicare Secondary Payer Clinical Trial Billing Alert
Managing Delegated Entities: Ensuring Compliance and Minimizing Risks
Fraud Risk Management: Techniques for Prevention, Detection & Mitigation
RAC Audits: When to Appeal, How to Appeal | A Guide to Success
Healthcare Reform | Fraud & Abuse: Challenges and Opportunities in a Stricter World
Managing Medicaid MIC Audits and Appeals: An Operational Guide
Innovative Strategies to Measure, Report and Improve the Efficiency of a Compliance Program
ZPIC Audits: Steps You Can Take to Minimize the Risks
Hot Topics in Medicare Secondary Payer Reporting
Identity Theft Red Flags: An Operational Guide for Financial Services
|Home | Solutions | Industries | Resources | News & Events | Company | Privacy | Terms of Use | Contact Us
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The Piper Jaffary analyst Gene Munster has shared his predications for Apple's Q4 financial earnings which will be announced today and has put their stock valuation at $640. What is more interesting than Munster's financial prediction, however, was what he had to say about the iPhone 6.
According to Munster Apple will release the iPhone 6 next Summer, months before its usual September refresh, and that it will feature a larger display. Business Insider has the full scoop:
But even more important than the 5S, says Munster, is the iPhone 6, which he expects to be out in the Summer, sooner than expected. The 6 is going to have a bigger screen, and Munster thinks it's going to be a "blockbuster."
Enthusiasm about the iPhone 6 should more than offset any concern about 5S sales inevitably slowing, says Munster.
Munster didn't just stop at the iPhone 6, he is also predicting Apple will finally release the iWatch next year. He stated that Apple is working on a "computerized wristwatch" which will pair with iOS Devices.
How's this for an iWatch concept? It was designed by Thomas Bogner.
For the most part Munster's predictions are sound and match up with what we have heard from other sources. Apple needs to release something next year besides its usual updates to existing products and the iWatch is looking closer to seeing the light of day than an Apple TV.
Speaking of an Apple TV Munster also does believe the Fruit Company will release a "television set" in 2014. It is worth noting though that he has been saying this for the past 2 years now with zero results. Apple could very well update its existing Apple TV though, considering it has been left in the dark for ages now.


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Click Here to Watch the Whole Video in HD at Unglory Hole
See straight guys think they are going to get free blowjobs from a girl, when its really a guy!
Wassup guys'? So I convinced my buddy to take this new guy down to my favorite spot "The Glory Hole" of course he was too excited to hear about this, he was blowing up my cell for weeks!!!! Finally, we set up a date & time to meet at my secret spot, only so I can get a great laugh. So I told him what to do, he went in, saw a pretty little face in there & pulls his dick out LMAO!!! He still doesn't know who really blew him! I guess he will now. Check it out!
Pixels: 320X240 | Bitrate: 350K
Pixels: 640X480 | Bitrate: 700K


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Henry Soto, better known as "Pops", once again led his Tavern 16 Team 1 to another clearly defined first place in the local area "Pops" pool league. To make matters even sweeter Tavern 1 defeated Tavern 2 in the end of season shoot out held at the New Star Bar in scenic downtown Corinth. The finals were well attended with team members. The Star Bar also hosted a delightful pool league party banquet and awards ceremony, that was also well attended. (Great Ribs).
A big thank you to Henry Soto from all your team mates and your rivals. We all appreciate the knowledge and expertise you share concerning the humbling game of pocket billiards.
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Hotels in 12077 - Glenmont NY
Only hotels in 12077 zip code are listed below. Search for cheap and discount hotel rates in Glenmont, NY for your upcoming leisure or conference / group travel. We list the best 12077 hotels and motels so you can review the Glenmont hotel list below to find the perfect lodging. Hotels in Albany county and area code 518 are also listed.
12077 Hotels, Motels & Accommodations
Next: Show All Available 12077 Hotels with Pricing >


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Student Ambassadors
We can't wait to show you around!
When you visit Central Penn College, you will get a chance to meet one of our Student Ambassadors! These students know their stuff - and they love to share their personal experiences with our campus guests. Before you visit us, take a few minutes and check out their short bios below, you may make a friend before you even step foot on campus!
Reason why I choose Central Penn: Central Penn has everything that I was looking for in a college!
Campus Involvement: I am involved in nearly all of the campus clubs. I love finding new things to do on campus.
Reason why I choose Central Penn: The fact that I can complete my degree faster than my friends at other colleges.
Favorite Central Penn Memory: Performing at Open Mic Night in the Student Lounge.
Reason why I choose Central Penn: Student to faculty ratio, living in apartments and townhouses and getting my Bachelor's degree in 3 years, plus an internship.
Campus Involvement: CCM (Campus Christian Ministries), Creative Writing, Cooking Club
Reason why I choose Central Penn: The small class sizes and living in an apartment or townhouse.
Campus Involvement: SGA (Student Government Association), Leadership Development Program, American Marketing Association Marketing Club
Yonnashae Newsome
Favorite Central Penn Memory: Summerfest is always a blast!
Campus Involvement: Armored Dance Team
Favorite Central Penn Memory: Paintballing with SGA, Summerfest (and the huge slip-n-slide) and Summer beach trips.
Campus Involvement: PTA Club, Campus Activities Board, SGA (Student Government Association)
Favorite Central Penn Memory: Summerfest!
Campus Involvement: Circle K, Residence Hall Council
Reason why I choose Central Penn: Condensed schedule and Central Penn offers Criminal Justice.
Campus Involvement: Knight Writers (creative writing club), Knights of Liberty
Reason why I choose Central Penn: The small classroom learning environment.
Campus Involvement: Armored Dance Team
Reason why I choose Central Penn: Their PTA program was highly recommended.
Campus Involvement: SGA (Student Government Association), PTA Club, Campus Activities Board


text:
Child Safety Statement for Tin Toys
Child Safety is a priority at TinManTinToys, LLC. Most tin toys are not really toys at all. They are intended for adult collectors, and are not necessarily designed to comply with Toy Safety Legislation. As a responsible company, our intention is to display and sell our tin toys primarily as collector items.
TinManTinToys, LLC, requires placement of warning information on all products, as may be required by the law and government regulation. Tin toys often contain small parts and sharp edges that can pose hazards to children. TinManTinToys, LLC, cannot assume any liability for how tin toys are used.
We urge buyers to be attentive at all times, in the interest of child safety.


text:
In response to BabeParilli's comment:
In response to bredbruu's comment:
did you see the firestorm after my posts around the time?
Don't recall them specifically. But then, you've had a lot of firestorms.
You were right. He was a big difference maker.
you are right. and on this site any thought or idea not what the mainstream dogma purports (party line) is attacked. including any observation made before pundits write a lot about it or all ones allies begin to say it, is immediately attacked.
(i think you know this from personal experience)
cant tell you the number of things ive posted that were excoriated by people who 2 years later (often sooner) are promoting all kinds of observations that they formerly excoriated as wrong.


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Re: Professor Pans 'Learning Style' Teaching Method
I spent a fair amount of time with this hypothetical construct in the 70s when it was high on the ASCD program agenda. I still think that it is a useful idea but have seen it misused more often than not. The most egregious abuse IMHO is thinking of it as an immutable personality trait that is either accommodated or not.
A more fruitful approach would be to use it in an effort to understand how preferred learning styles evolve over the lifespan and how they might be broadened and deepened. It is all too easy for most of us to find something that appears to work for us and get stuck in that modality. Like fomenting cognitive dissonance, teaching also obligates us to instigate dissatisfaction with preferred learning styles as well.
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Address: 625 Black Lake Blvd., Olympia, WA, 98502
- Hours:
- 10:00 - 21:00 ( Mon - Sat ) 11:00 - 18:00 ( Sun )
Westfield Capital, formerly known as Capital Mall, is a shopping mall owned by The Westfield Group, and is located in Olympia, Washington. Its major anchor stores include Macy's, JCPenney, American Eagle, Hollister, and Best Buy.History
Opened in 1977 by The Hahn Company and acquired in 1998 by Westfield America, Inc., a precursor of The Westfield Group, which renamed it "Westfield Shoppingtown Capital", dropping the "Shoppingtown" from the name in 2005. It has undergone a $50 million expansion and renovation, adding the "Promenade at Westfield Capital" with Borders Books and Music in August 2006. A 14-screen Century Theatres multiplex opened on May 25 2007, while Mervyn's closed their 99,924 sq. ft. store on December 31 2006, after a clearance sale.Anchors
Best Buy (34,755 sq. ft.)
JCPenney (93,481 sq. ft.)
Macy's (113,190 sq. ft.)
Borders Books (33,500 sq. ft.)
Century Theatres(80,000 sq. ft.)
Reviews of Capital
Capital in the media
HAAD opens new service countersABU DHABI — The Health Authority-Abu Dhabi (HAAD) has opened two new customer service counters at Abu Dhabi Chamber of Commerce and Industry (ADCCI) and ...
- From Khaleej Times, @ Capital
- 2010-06-08
"This year's event was special"The procession passed down the Capital Mall by the former federal courthouse, which is a symbol of the 1973 Roe v Wade and several subsequent pro-abortion ...
- From California Catholic Daily, @ Capital
- 2010-01-01
Mall voyeur to be sentencedA 35-year-old former loss prevention officer at the JC Penney store in the Westfield Capital mall will be sentenced in Olympia on Jan. ...
- From TheNewsTribune.com, @ Capital
- 2009-12-29
Local retailers dare to hopeTraffic backed up at intersections near Westfield Capital mall and in Lacey; the mall was set to stay open until 11 pm Wednesday. A year earlier, it closed ...
- From The Olympian, @ Capital
- 2009-12-24
New family docs in TownCapital Medical Center on Capital Mall Drive opened the Olympia Family Medicine clinic last summer. Both practices serve an area that one hospital executive ...
- From TheNewsTribune.com, @ Capital
- 2009-12-22
Questions on Capital
Jobs at Capital
Part-Time Replenishment Associate-Early AM - Capital MallJCPenney Olympia, WA
Holiday/Seasonal Retail Cosmetics Cashier - Temp/Part Time Flexable H...Macy's Olympia, WA
Part Time Retail Sales Consultant Capital Mall OlyAT&T Olympia, WA
Part Time Retail Sales Consultant Capital Mall OlyAT&T Olympia, WA
Part Time Retail Sales Consultant Capital Mall OlyAT&T Olympia, WA
Mall newsletters
'Tis the Season at Westfield Capital
- @ Capital
- 2010-11-27
Back To Cool: Get Geared Up for Back To School at Westfield Capital
- @ Capital
- 2010-08-26
Limited Time Deals at JCPenney Portraits, Now thru 8/26
- @ Capital
- 2010-08-12
Join Us: Forever 21 Grand Opening at Westfield Capital, Sat. 8/14
- @ Capital
- 2010-08-10
VIP Sex and the City 2 Shopping Event + free goodies, 5/27
- @ Capital
- 2010-05-26


text:
Eau Des Merveilles Elixir
Eau Des Merveilles Elixir
Eau De Parfum
by Hermes
WFor Women
Item #
Free Shipping in U.S. (orders over $59.00)
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- Voyage d'Hermes
- Design House: Hermes
- Fragrance Notes: pink pepper, elemi, Italian lemon, Indonesian pepper, oak, cedar, ambergris accord, vetiver, bitter orange
- Year Introduced: 2006
- Recommended Use: casual
No reviews written for this product
1 - 2 (of 2 Reviews)
I was in Vegas recently with some girlfriends. I asked one of them what the perfume was that she was wearing, and she told me it was Eau Des Merveilles Elixer. It smelled heavenly! So, I decided to order some, I have loved it from day one! The smell stays on your skin all day, I can still catch a whiff of it when I go to bed. I think this will be the perfume of choice from now on!!!
Written by J Mcfarlane on June 14, 2015Read Review details ►
This will become your signature scent! I get stopped everywhere, requesting the name. It is distinct but very subtle, and lasts all day. I used to use it for special occasions but now I wear it always. You will smile when you go to sleep and are still able to get a wiff from putting it on in the morning. Don't hesitate - buy it now (because it is often out of stock) and feel great when strangers have to know what you are wearing.
Written by sunny on November 02, 2014Read Review details ►
1 - 2 (of 2 Reviews)


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About KNM Smile Dental Clinic
KNM Smile Dental Hospitals with four branches in the city is in the forefront of providing quality dental care in all the specialties of dentistry. It is promoted by Dr Madhu Vasepalli, M.D.S, Dr Hari Jangala, M.D.S, Dr RVSS Prasad, BDS and Dr Kiran Kotha M.D.S. In our endeavour to provide quality care, emphasis on preventive, corrective and also the restorative aspects of dental treatment are provided without compromising the ethics and values. It is an acknowledged hospital with ISO certification and also a referral center for the Government Hospitals in providing speciality care.
|Dental Hospital
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Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.
1. A method of reading multiple bits of data stored as different ones of a plurality of levels of charge in storage elements of individual memory cells of a first group, wherein the data read is corrupted by other data stored as different ones of the plurality of levels of charge in storage elements of adjacent memory cells of a second group to which the storage elements of the cells of the first group are field coupled, comprising:
reading the charge levels stored in the storage elements of the second group of memory cells, thereby to read the data stored in the second group of memory cells,
storing the data read from the storage elements of the second group of memory cells in a location outside of the first or second group of memory cells,
thereafter altering the levels of charge stored in the individual storage elements of the memory cells of the second group, thereby to alter apparent levels of charge read from the storage elements of the first group of memory cells, and
thereafter reading the charge levels stored in the storage elements of the first group of memory cells, thereby to read the data stored in the storage elements of the first group of memory cells with altered charge levels stored in the storage elements of the second group of cells.
2. The method of
3. The method of
4. The method of
5. The method of
6. The method of
7. The method of
8. The method of
9. The method of
10. The method of
11. The method of
12. A method of reading data stored as different ones of a plurality of levels of charge in individual storage elements of memory cells in an array of memory cells that includes at least first and second groups of memory cells having charge levels of their storage elements field coupled with each other, comprising:
reading the charge levels stored in the storage elements of a first group of memory cells with use of a first set of reference levels, thereby to provide a reading of the data stored in the storage elements of the first group of memory cells,
determining whether or not the data read from the storage elements of the first group of memory cells are valid,
if the data read from the storage elements of the first group of memory cells is determined not to be valid, reading the charge levels stored in the storage elements of the second group of memory cells, thereby to provide a reading of the data stored in the second group of memory cells,
storing the data read from the second group of memory cells,
thereafter altering the levels of charge stored in the individual storage elements of the memory cells of the second group, thereby to alter apparent levels of charge stored in the storage elements of the first group of memory cells due to the field coupling therebetween, and
thereafter reading the charge levels stored in the storage elements of the first group of memory cells with use of a second set of reference levels different from the first set of reference levels, thereby to provide a reading of the data stored in the first group of memory cells that is compensated for the effects of the field coupling between the storage elements of the first and second groups of memory cells.
13. The method of
14. The method of
15. The method of
16. The method of
17. The method of
18. The method of
19. The method of
20. The method of
21. In a flash non-volatile memory system including an array of memory cells connected in NAND strings to form columns and having word lines extending across the columns over rows of cells, wherein adjacent rows are capacitively coupled with each other and programmed in a fixed sequence by increasing the charge levels stored in the individual cells to one of four or more charge levels in a first programming step and to one of at least the highest two or more charge levels in a second programming step, a method of reconstructing data stored in a first row that is read as invalid on account of data subsequently stored in an adjacent second row, comprising:
reading the charge levels stored in the cells of the second row and writing the data represented thereby to another location within the memory system,
thereafter increasing the charge levels of the individual cells of the second row from their programmed levels to the highest programming charge level, and
thereafter reading the charge levels stored in the cells of the first row.
22. The method of
23. The method of
This invention relates generally to the field of data memories, and, more specifically, to memories of the type that store data as levels of electronic charge, including, but not limited to, flash electrically erasable and programmable read-only memories (flash EEPROMs) utilizing either conductive floating gates or dielectric material as charge storage elements.
It is common in current commercial products for each storage element of a flash EEPROM array to store a single bit of data by operating in a binary mode, where two ranges of threshold levels of the storage element transistors are defined as storage levels. The threshold levels of transistors correspond to ranges of charge levels stored on their storage elements. In addition to shrinking the size of the memory arrays, the trend is to further increase the density of data storage of such memory arrays by storing more than one bit of data in each storage element transistor. This is accomplished by defining more than two threshold levels as storage states for each storage element transistor, four such states (2 bits of data per storage element) now being included in commercial products. More storage states, such as 16 states per storage element, are contemplated. Each storage element memory transistor has a certain total range (window) of threshold voltages in which it may practically be operated, and that range is divided into the number of states defined for it plus margins between the states to allow for them to be clearly differentiated from one another.
As the number of states stored in each memory cell increases, the tolerance of any shifts in the programmed charge level on the storage elements decreases. Since the ranges of charge designated for each storage stat necessarily be made narrower and placed closer together as the number of states stored on each memory cell storage element increases, the programming must be performed with an increased degree of precision and the extent of any post-programming shifts in the stored charge levels that can be tolerated, either actual or apparent shifts, is reduced. Actual disturbs to the charge stored in one cell can be created when programming and reading that cell, and when reading, programming and erasing other cells that have some degree of electrical coupling with the that cell, such as those in the same column or row, and those sharing a line or node.
Apparent shifts in the stored charge levels occur because of field coupling between storage elements. The degree of this coupling is necessarily increasing as the sizes of memory cell arrays are being decreased, which is occurring as the result of improvements of integrated circuit manufacturing techniques. The problem occurs most pronouncedly between two groups of adjacent cells that have been programmed at different times. One group of cells is programmed to add a level of charge to their storage elements that corresponds to one set of data. After the second group of cells is programmed with a second set of data, the charge levels read from the storage elements of the first group of cells often appear to be different than programmed because of the effect of the charge on the second group of storage elements being capacitively coupled with the first. This is known as the Yupin effect, and is described in U.S. Pat. No. 5,867,429, which patent is incorporated herein in their entirety by this reference. This patent describes either physically isolating the two groups of storage elements from each other, or taking into account the effect of the charge on the second group of storage elements when reading that of the first group.
In the types of memory systems described herein, as well as in others, including magnetic disc storage systems, the integrity of the data being stored is maintained by use of an error correction technique. Most commonly, an error correction code (ECC) is calculated for each sector or other unit of data that is being stored at one time, and that ECC is stored along with the data. The ECC is most commonly stored together with the sector of user data from which the ECC has been calculated. When this data is read from the memory, the ECC is used to determine the integrity of the user data being read. One or a few erroneous bits of data within a sector of data can often be corrected by use of the ECC but the existence of more errors renders the attempted data read to fail. Thus, the existence of bits that are read incorrectly because of close field coupling with adjacent memory cells can cause an attempted data read to fail.
In order to be able to recover valid data from a failed read of a first group of memory cells, as determined to have failed by the use of an ECC or otherwise, the data in at least an adjacent second group of memory cells, which are field coupled with the first group being read, are read and written elsewhere, either temporarily or permanently, followed by adjusting the programmed levels of the cells in the second group to that which allows the data originally written in the first group of cells to be accurately read. Ideally, the programmed levels of the second group of memory cells are returned to those existing when the first group of cells was programmed with the data that is now being read. The data is then accurately read from the first group since the fields coupled from the second group of cells are then the same as when the first group was programmed. But since it is often not practical to return the second group to the condition that existed when the first group was programmed, either because that initial condition is not known or for other reasons, the programmed levels of the cells of the second group are alternatively adjusted to a common level, usually the highest programmed level of the memory system.
The present invention can be implemented in various types of flash EEPROM cell arrays. A NOR array of one design has its memory cells connected between adjacent bit (column) lines and control gates connected to word (row) lines. The individual cells contain either one storage element transistor, with or without a select transistor formed in series with it, or two storage element transistors separated by a single select transistor. Examples of such arrays and their use in storage systems are given in the following U.S. patents and pending applications of SanDisk Corporation that are incorporated herein in their entirety by this reference: U.S. Pat. Nos. 5,095,344, 5,172,338, 5,602,987, 5,663,901, 5,430,859, 5,657,332, 5,712,180, 5,890,192, 6,091,633, 6,103,573 and 6,151,248, and applications Ser. No. 09/505,555, filed Feb. 17, 2000, Ser. No. 09/667,344, filed Sep. 22, 2000, Ser. No. 09/925,102, filed Aug. 8, 2001, and Ser. No. 09/925,134, filed Aug. 8, 2001.
A NAND array of one design has a number of memory cells, such as 8, 16 or even 32, connected in a series string between a bit line and a reference potential through select transistors at either end. Word lines are connected with control gates of cells across different series strings. Relevant examples of such arrays and their operation are given in the following U.S. patents and patent application that are incorporated herein in their entirety by this reference: U.S. Pat. Nos. 5,570,315, 5,774,397 and 6,046,935, and application Ser. No. 09/893,277, filed Jun. 27, 2001. Briefly, two bits of data from different logical pages of incoming data are programmed into one of four states of the individual cells in two steps, first programming a cell into one state according to one bit of data and then, if the data makes it necessary, re-programming that cell into another one of its states according to the second bit of incoming data.
The above-referenced patents and patent applications describe flash EEPROM systems that use conductive floating gates as memory cell storage elements. Alternatively, flash EEPROM systems with memory cells employing charge trapping dielectric material in place of floating gates are operated in substantially the same way. Examples of this are included in patent application Ser. No. 10/002,696, filed Oct. 31, 2001, by Harari et al., entitled "Multi-State Non-Volatile Integrated Circuit Memory Systems that Employ Dielectric Storage Elements," which application is incorporated herein by this reference. Field coupling between dielectric storage elements of adjacent memory cells can also affect the accuracy of the data read from such memory systems.
Additional aspects, features and advantages of the present invention can be had from the following detailed description of exemplary embodiments thereof, which description should be read along with reference to the accompanying drawings.
FIG. 1 schematically illustrates an example memory system and operation in which the present invention may be implemented;
FIG. 2 is an example, in plan view, of storage elements of memory cells within the array of memory cells of the system of FIG. 1;
FIGS. 3A and 3B are curves of programmed memory cell level distributions that illustrate one application of the present invention.
FIG. 4 is a flow chart that provides one example of the operation of the memory system of FIGS. 1-3B;
FIGS. 5A, 5B and 5C illustrate exemplary structures and operation of three types of memory cell arrays in which the present invention may be implemented;
FIGS. 6A and 6B show one technique for programming data into a particular type of existing non-volatile memory cell array;
FIG. 6C illustrates another programming technique that is carried out as part of the special operation illustrated in FIG. 8;
FIG. 7 illustrates one format of repetitive programming pulses used to program non-volatile memory cells, which may be used with the programming illustrated in FIGS. 6A, 6B and 6C; and
FIG. 8 is a flow chart showing a special operation of the particular type of existing non-volatile memory cell array whose normal data programming is illustrated in FIGS. 6A and 6B.
In order to explain the present invention and example implementations, a general diagram of the interrelationship of major components of an example mass memory system is shown in FIG. 1. A primary component of this system is a memory 11, such as an array of memory cells formed on a semiconductor substrate, wherein one or more bits of data are stored in the individual memory cells by storing one of two or more levels of charge on individual storage elements of the memory cells. A non-volatile flash EEPROM is a common type of memory for such systems, and is used in this example.
A second primary component of the memory system of FIG. 1 is a controller 13. The controller 13 communicates over a bus 15 to a host computer or other system that is using the memory system to store data. The controller 13 also controls operation of the memory cell array 11 to write data provided by the host, read data requested by the host and perform various housekeeping functions in operating the memory. The controller 13 normally includes a general purpose microprocessor, with associated nonvolatile software memory, various logic circuits, and the like. One or more state machines are often also included for controlling the performance of specific routines.
The memory cell array 11 is addressed by the controller 13 through address decoders 17. The decoders 17 apply the correct voltages to gate and bit lines of the array 11 in order to program data to, read data from, or erase a group of memory cells being addressed by the controller 13. Additional circuits 19 include programming drivers that control voltages applied to elements of the array that depend upon the data being programmed into an addressed group of cells. The circuits 19 also include sense amplifiers and other circuits necessary to read data from an addressed group of memory cells. Various specific forms of the circuits 17 and 19 are described in the patents and patent applications identified in the previous Background section. Data to be programmed into the array, or data recently read from the array, are typically stored in a buffer memory 21 within the controller 13. The controller 13 also usually contains various registers for temporarily storing command and status data, and the like.
The array 11 is divided into a large number of BLOCKS 0-N of memory cells. As is common for flash EEPROM systems, the block is the unit of erase. That is, each block contains the minimum number of memory cells that are erased together. Each block is typically divided into a number of pages, as also illustrated in FIG. 1. A page is the unit of programming. That is, a basic programming operation writes data into a minimum of one page of cells. One or more sectors of data are stored within each page. As shown in FIG. 1, one sector includes user data and overhead data. Overhead data typically includes an ECC that has been calculated from the user data of the sector. A portion 23 of the controller 13 calculates the ECC when data is being programmed into the array 11, and also checks it when data is being read from the array 11. Alternatively, the ECCs are stored in different pages, or different blocks, than the user data to which they pertain.
A sector of user data is typically 512 bytes, corresponding to the size of a sector in magnetic disk drives. Overhead data is typically an additional 28 bytes. One sector of data is most commonly included in each page but two or more sectors may instead form a page. A large number of pages form a block, anywhere from 8 pages, for example, up to 512, 1024 or more pages. The number of blocks is chosen to provide a desired data storage capacity for the memory system. The array 11 is typically divided into a few sub-arrays (not shown), each of which contains a proportion of the blocks, which operate somewhat independently of each other in order to increase the degree of parallelism in the execution of various memory operations. An example of the use of multiple sub-arrays is described in U.S. Pat. No. 5,890,192, which patent is incorporated herein by this reference.
FIG. 2 shows an arrangement of storage elements (squares) in an array of memory cells in order to illustrate the capacitive coupling (dashed lines) between rows of them. Considering a storage element 25 of a row 35, for example, it is field coupled to storage elements in each of the adjacent rows 37 and 39. The storage element 25 is most closely coupled with the storage elements 27 and 31, because of their proximity, but also have a lesser degree of coupling with storage elements 26, 28, 32 and 30 that are further away. The amount of coupling between two storage elements depends upon the distance between them, the dielectric constant of insulating material between them, whether there are any conductive surfaces between them, and the like.
Although FIG. 2 illustrates only field coupling between rows of storage elements, such coupling also exists between columns of storage elements. This is not being considered in the examples being described herein because, in these examples, data is programmed into memory cells in units of individual rows, the coupling between the rows has been found to be the cause of the apparent shift in programmed levels. For example, if data are programmed as distinct charge levels on the storage elements of the row 35, a later change in the charge levels on either or both of the adjacent rows 37 and 39 will cause a shift in the apparent charge levels that are then read from the storage elements of the row 35. The amount of such a shift in the apparent charge level read from a particular storage element of the row 35 depends upon the degree of coupling with other storage elements whose charge was later changed in level and the amount of that change. When the later change is caused by programming data into the adjacent row, the amounts of the shifts that result are unknown unless the patterns of data programmed into each row are monitored and calculations of their effect made as part of each read operation.
FIG. 3A shows an example of the effect upon a first group of memory cells, such as a row of cells, of the later programming of a second group of memory cells, such as an adjacent row of cells. In this example, four distinct charge levels are defined for each storage element, thereby to store two bits of data on each storage element. Since the level of charge stored on a storage element changes the threshold voltage (VT) of its memory cell transistor, the threshold voltage is shown on the horizontal axis of the curves of FIG. 3A. The solid lines show the distributions of the number of threshold voltages of all the cells in a page immediately after being programmed, before any change is made to the adjacent pages. The vertical axis is the number of cells at each threshold level, the curves having essentially a Gaussian distribution. A curve 45 is the distribution of the cells in the erased state, which, in this example, is also designated as a programmed state of the bits 11. When a block of cells is erased, the cells are reset to the 11 state.
Each cell of a page being programmed to one of the other programmed states 47, 49 or 51 has electrons injected onto its storage element until its threshold reaches the state corresponding respectively to the data 01, 00 or 01 being programmed into the cell. Suitable programming techniques are described in other patents identified above in the Background. Briefly, cells of a page being programmed are programmed in parallel with chunks of data that are a fraction of the capacity of the page or, if the array and system allow, the entire page. Those being programmed into the 10 state are alternately pulsed with programming voltages and then verified by use of a read threshold level V10. When it is determined that a cell has been programmed to a threshold level above V10, programming stops as to that cell but continues for other cells that have not yet reach their verify level. If being programmed to 00, a verify level V00 is used. If to 01, a verify level V01 is used. The particular data bit pair assigned to each of the distributions 45, 47, 49 and 51 may be different that shown in FIG. 3A, and may even be rotated during operation of the memory system in order to even out wear on the array.
It is desired to maintain a sufficient margin between the states 45, 47, 49 and 51 so that the state of each cell can be unambiguously read. When a page of cells programmed as described above are to be read, their states are individually compared to reference threshold levels within the margins between these states. These are shown in the example of FIG. 3A as R10 (VT=0), R00 and R01. Of course, in order to be able to fully use an available threshold window, as many different states are included as is practical, four states being shown. Another example is sixteen states. A larger number of states can result from the width of the distributions being narrowed by programming with smaller voltage increments in successive pulses but this then takes more time to perform the programming. It is therefore desirable, either alone or along with narrowing the programmed cell distributions, to take steps to reduce the need for such large margins between states. Rather large margins are usually maintained in order to allow for the programmed cell distributions to shift or spread as a result of repetitive operating cycles that occur after the programming, as experience has shown to occur. It is highly desirable to reduce such shifting and spreading in order to be able to reduce the amount width of the margins between states.
The spreading of the distributions that occurs as the result of subsequently programming an adjacent row of cells is shown in dashed lines in FIG. 3A. Even when significant margins are maintained during the initial programming of a row of cells, these margins can be significantly narrowed when the distributions spread as a result of later programming an adjacent row of cells. If just a few of the cells spread from below to above one of the reading thresholds R10, R00 and/or R01, there can be enough erroneous readings to overwhelm an ECC. In such a case, the data cannot be read with those thresholds, so are designated as invalid unless some corrective action is taken. One corrective technique used in the past is to read the page again by simply moving the reading threshold levels R10, R00 and/or R01 within the margins to avoid the effect of the spreading. Since the spreading can come from both sides of each margin, this requires that the margins be maintained wider than is normally desired in order to prevent the distributions of adjacent states from overlapping. It is thus preferable to take some other action to recover the data, in such a circumstance, that does not require maintaining wide margins between the programmed states.
The programmed distributions appear to spread in the manner shown in FIG. 3A when the data subsequently programmed into the adjacent page is random; that is, when the state stored in each storage element can be any of the four possible states. A storage element programmed to a level at the lower edge of the distribution 47, for example, will be read to have the same level in the distribution 47′ if the charge level on adjacent storage elements does not change during the subsequent programming. On the other hand, a storage element initially programmed to a level at the upper edge of the distribution 47 will, if the adjacent storage elements are subsequently programmed from an erased state 11 to the highest state 01, be read to have a level that is increased by an amount Δ. The higher charge levels on the adjacent storage elements are coupled with the previously programmed storage element whose level is being read. Other combinations of initial and later programming of adjacent cells of the distribution 47 fall between these two extremes, thereby resulting in the apparent distribution 47′. The lower end of the apparent distribution 47′ remains at the same level but its spread is increased by Δ.
If the data read from the initial row is invalid, a heroic process takes place to recover the data. The system is designed to have sufficient margins so that this does not occur very often but, at the same time, to provide a technique to handle it when necessary, thus avoiding the need to make the margins so wide that this condition never occurs. The recovery process involves changing the charge levels on the later programmed page. If the memory array is of a type having only one page per block, the subsequently programmed block can be erased (after reading its data and writing it in another location, of course). This returns the adjacent page of cells to their condition when the problematic page was initially programmed. That initial page will then exhibit the original distributions 45, 47, 49 and 51 and should then be readable with the same read reference levels. At least the effect of the later programming of the adjacent page has been removed.
However, most flash EEPROM systems are of the type illustrated in FIG. 1, where a block contains a large number of pages. The later programmed page cannot then be erased without erasing all other pages of the block. Therefore, in such a case, charge is added to the storage elements of the later written page that are not already in the highest state by further programming until they are all in the highest threshold state. The result on the originally programmed page is shown in FIG. 3B, where the apparent distributions are tightened. The upper end of the distribution 47″, for example, remains the same as that of the distribution 47′ of FIG. 3A, while the lower end is moved upward by approximately Δ. Every storage element of the originally programmed page is pulled up by the influence of the high charge level of the storage elements of the other page. The originally programmed page is then read with thresholds that are also shifted by Δ, the same amount that the apparent distributions 45″, 47″, 49″ and 51″ have been shifted from the respective original distributions 45, 47, 49 and 51. The new read threshold levels are R10+Δ, R00+Δ and R01+Δ, as shown on FIG. 3B.
The reading process for a page of data is outlined by the flow chart of FIG. 4. A first step 55 is to read the user data and its stored ECC in a normal manner. This can be, for example, a page formed by the row 37 of memory cells illustrated in FIG. 2. The read data is then compared with the ECC, in a step 57. If there are no errors in the data, as determined by comparison with the ECC, as indicated by the step 59, the read data is sent to the host, as shown by a step 65. This is the process that is followed for most all reads. In other cases, where one or more bit errors in the read data are present, the errors may be correctable, as determined by a step 61. If so, the read data is corrected, in a step 63, and the corrected data than sent to the host, through step 65. Almost all of the pages read in a useful system will follow this process.
But for the rare occasion where the data is determined by the step 61 to not be correctable, the extra steps described above are taken. The charge levels of a next adjacent page, such as the page formed by the row 35 of FIG. 2, are then adjusted to the highest programmed level. A first step 67 of this process is to read the data from that next page. If there are no errors in the data, as determined by steps 69 and 71, or if there are errors that are correctable, as accomplished by steps 73 and 75, this read data is stored elsewhere, as indicated by a step 79. The page of data can be directly written to another page in the memory cell array, or can first be temporarily stored in the controller memory 21 for later writing back into the array. After a copy of the data of the page 35 is safely stored somewhere, the charge levels of the storage elements of that page are increased to a common level, most conveniently to the maximum threshold level of a normal programming operation. This is indicated by a step 81. Those storage elements within the page 35 that are already at that level are not further programmed, and the others are subjected to the usual program/verify cycles until each storage element contains the maximum charge (the threshold level 01 is reached). This can be done by the system's normal programming operation but, of course, user data is not being programmed. All memory cell transistors are programmed to the highest 01 state.
Thereafter, as indicated by a step 83, the page 37 is again read with the higher read threshold levels, as previously explained with respect to FIG. 3B. This read data is then subjected to an ECC check, as indicated by the steps 85, 87, 89 and 91. If there are no errors in the data, or if any errors can be corrected, the read data are sent to the host by the step 65. The data recovery process has then been a success. On the other hand, if the data read by the step 83 has too many errors to be used, then the address of the page that cannot be read is stored, as indicated by the step 93. The attempted data recovery process is then ended. Unless there is some other alternate technique that is available for trying to recover the data, that page of data cannot be returned to the host. The system and this recovery process are designed, however, for such an absolute failure to seldom, if ever, result from the field coupling between adjacent pages of the memory array.
If, at step 73, it is determined that the data read from the next page 35 is not free of errors and is not correctable, a next step 77 is to store the address of the failed page and then return to the step 67 for the next page in physical proximity to the page 37, the page 39 of FIG. 2 being this page. What this determines is that both of the pages 37 and 35 require the process of to be applied to recover data from them. The step 81 is then applied to the next page 39, in proximity to the pages 37 and 35. At a step 95, the data reading steps 83-91 are then caused to be repeated for the second failed page 35. If there are more than two failed pages in succession, the process steps through each until valid data is read from a page.
FIG. 5A illustrates the sequence in which rows of memory cells are programmed according to one technique that is used in at least one commercial NAND array. Each row of an erased block is programmed in sequence, one after the other, wherein one row includes one or more pages of the memory. The details of the data recovery described above with respect to FIGS. 2-4 apply to this type of memory. Since the order of programming of the rows of the pages are known, the row written after the failed read of a row is known. It is that subsequently written row that is written to the higher state in order to recover data of the failed read row. For example, if valid data cannot be read from the row 101, it is the cells of the subsequently programmed row 103 that are programmed to their highest states. Data is then read from the row 101, more likely now to be valid data. The adjacent row 105 on the other side of the failed read page need not be considered since its data were written before that of the row 101, so the data levels stored in the row 105 have not changed the apparent data levels read from the row 101.
In other types of memory systems, however, this order of programming rows is not a constraint. Referring to FIG. 5B, for example, it is shown that rows within a block are programmed in an order that is independent of their relative positions. For example, a row 105 is first programmed, followed by rows 107, 109, 111, 113 and 115, in that order. But during a read operation of the pages formed by these rows, the order of their programming may not be known. For example, if data read from the row 107 are not valid and cannot be corrected by the ECC, it may not be known which of the adjacent rows 105 and 109 was later programmed and thus a likely cause of the error in reading the row 107. If this is not known, both adjacent rows 105 and 109 are reprogrammed to their highest states before again reading data from the row 107. If the order is known, of course, only the adjacent row that was later programmed is treated in this way. In this case, the row 109 would be so treated while the row 107 would not. The order can be known, for example, by maintaining a time stamp or programming order number as part of the overhead data associated with the individual sectors of user data.
A couple of interesting things about the particular example shown in FIG. 5B may be noted. If invalid data is initially read from the row 105, which was the first to be programmed in the block, the levels of the cells of the rows 107 and 113 on both sides of the row 105 would need to be raised to their highest levels, since they have both been programmed with user data after programming the row 105. Fields from one or both of the rows 107 and 113 can be causing the invalid read of the row 105, so they both need to be raised in level. Further, if invalid data is initially read from the row 113, the fields created from the adjacent rows 105 and 111 are likely not the cause of the error because the row 113 was programmed before either of its adjacent rows. In such a case, the recovery process can be avoided and the data in the row 113 marked as invalid.
FIG. 5C illustrates another array architecture in which the data recovery process being described may be implemented. One specific example of this architecture is described in U.S. Pat. No. 5,579,259, which patent is incorporated herein by this reference. Memory cells within two adjacent rows 117 and 119 form a block, in that the cells of both rows are erased from a common erase gate line 121. The capacity of the block is one up to many sectors of data but the block is also the unit of programming. This structure of a pair of memory cell rows with an intermediate erase gate is repeated across the array. When invalid data is read from one such block, the recovery process herein is applied to an adjacent block that was subsequently programmed, or, if it is not known which adjacent block was programmed later, to both of the blocks adjacent the block from which invalid data has been read, on either side.
FIGS. 6A and 6B demonstrate an existing programming technique that is employed with a particular NAND system discussed in the Background above, in connection with patents and a patent application there incorporated by reference. They illustrate threshold voltage distributions for the memory cell array when each storage element stores two bits of data, namely four data states, similar to illustration of FIGS. 3A and 3B. The curve 125 represents a distribution of the threshold levels VT of the cells within the array that are in the erased state ("11" data state), being negative threshold voltage levels. Threshold voltage distributions 126 and 127 of memory cells storing "10" and "00" user data, respectively, are between 0 volts and 1 volt and between 1 volts and 2 volts. A curve 128 shows the distribution of cells that have been programmed to the "01" data state, being the highest threshold voltage level, set more than 2 volts and less than 4.5 volts.
Each of the two bits stored in a single memory cell, in this example, is from a different logical page. That is, each bit of the two bits stored in each memory cell carries a different logical page address from each other. The lower bit shown is accessed when a lower page address is input. The upper bit shown is accessed when an upper page address is input.
FIGS. 6A and 6B also illustrate the specific existing technique used to program a 4-state NAND memory cell in an array of the type described above. In a first programming pass, the cell's threshold level is set according to the bit from the lower logical page. If that bit is a "1", nothing is done since it is in that state as a result of having been earlier erased. However, if that bit is a "0", the level of the cell is increased to the first programmed state 126. That concludes the first programming pass.
In a second programming pass, the cell's threshold level is set according to the bit being stored in the cell from the upper logical page. If a "1", no programming occurs since the cell is in one of the states 125 or 126, depending upon the programming of the lower page bit, both of which carry an upper page bit of "1". If the upper page bit is a "0", however, the cell is programmed a second time. If the first pass resulted in the cell remaining in the erased state 125, the cell is programmed from that state to the highest most state 128, as shown by the upper arrow FIG. 6B. If the cell has been programmed into the state 126, however, as a result of the first programming pass, the cell is further programmed in the second pass from that state to the state 127, as shown by the lower arrow of FIG. 6B. The result of the second pass is to program the cell into the state designated to store a "0" from the upper page without changing the result of the first pass programming.
Of course, if the memory is operated with more than four states, there will be a number of distributions within the defined voltage threshold window of the memory cells that is equal to the number of states. Further, although specific bit patterns have been assigned to each of the distributions, different bit patterns may be so assigned, in which case the states between which programming occurs can be different than those shown in FIGS. 6A and 6B. A few such variations are discussed in the patents previously referenced in the Background.
A typical programming voltage Vpgm waveform is illustrated in FIG. 7. The programming voltage Vpgm is divided into many pulses, and increased 0.2 volt pulse-by-pulse. The Vpgm step size is 0.2 volt. The maximum width of the resulting distribution is thus 0.2 volt.
In periods between the pluses, the program verify operations are carried out. That is, the programmed level of each cell being programmed in parallel is read between each programming pulse to determine whether it is equal to or greater than the verify level to which it is being programmed. If it is determined that the threshold voltage of a given memory cell has exceeded the verify level, Vpgm is removed by raising the voltage of the bit line to which the series cell unit of the given cell is connected from 0 volts to Vdd. Programming of others of the cells being programmed in parallel continues until they in turn reach their verify levels.
With the specific NAND system operation described with respect to FIGS. 6A, 6B and 7, the normal programming operation does not allow all the cells of a page to be increased to the highest level 128 when the recovery of data from an adjacent page is taking place. For a cell in the state 127, there is no standard programming operation to move the threshold level VT of the cell to the highest state 128. Therefore, in order to be able to move all cells of any page to the highest level 128 as part of recovering data from an adjacent page, another programming-like operation is added. This additional operation, initiated in response to an "ALL01" command, is shown in the flow chart of FIG. 8.
First, the system programming algorithm is set (131) to execute the ALL01 command, following by an act 133 of setting the address of the page whose memory cells are to have there threshold voltages raised to the 01 programmed state. Next, the data stored in the cells of the addressed page are read (135), followed by locking out all of those cells that are already in the 01 state (137). That is, none of the cells of the page in the 01 state are to receive programming voltages. For the remaining cells that are in other than the highest 01 state 128, a programming voltage Vpgm is set at 14 volts, in this specific example, and a pulse counter ("PC") is set to 0, as shown at 139.
The operation then follows a loop beginning with the application of one programming or more pulses (141), followed by reading the states of the cells being programmed (143). If any cells have reached the 01 state, as indicated by 145, they are noted to have passed (149) and further programming of them is locked out. But if some of theses cells are not yet in the 01 state, the process continues to a determination (147) of whether a certain maximum number of programming pulses, in this case 35, have been applied. If so, it is noted (151) that the process has failed as to the cells not in the 01 state, and the process is ended (153). If fewer than 35 programming pulses have been applied, however, the programming voltage Vpgm is increased by 0.2 volt and the pulse counter incremented by one (155). The programming cycle of acts 141-155 is then repeated. In the usual case, the process ends (153) when all the cells of the page have been programmed to the 01 state. FIG. 6C illustrates this method of programming the memory cells of the addressed page to the highest state 128. Data in the adjacent page that was first read to be invalid is now read again in order to recover that data, as described above.
Although the present invention has been described with respect to exemplary embodiments, it will be understood that the invention is entitled to protection within the full scope of the appended claims.
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It seems the only folks happy about No. 16 Northern Illinois playing in the Orange Bowl against No. 13 Florida State are the Huskies and their fans.
CINCINNATI (AP) Kyle Fuller scored a career-high 25 points, including all 12 of Vanderbilt's overtime points, as the Commodores outlasted Xavier for a 66-64 win on Thursday night.
NASHVILLE, Tenn.
NASHVILLE, Tenn. (AP) Vanderbilt is trying to prove the Southeastern Conference's smallest and only private university is serious about competing in the power conference of college football.
NASHVILLE, Tenn. (AP) Mouphtaou Yarou scored 16 points to lead Villanova to a 62-52 victory over Vanderbilt on Saturday.


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Photo editing tool Fotor makes in-app-purchases free for a limited time
With an update to version 4.5.1, photo editing tool Fotor is making all of its in-app-purchases free until June 27th. Fotor allows you to resize, crop, rotate and add effects to your photos easily. The app comes with a host of features, like the ability to create collages, add frames and borders, adjust brightness, contrast, saturation and add text and stickers to images along with depth-of-field effects.
While the base app is free, there are several in-app-purchases available for you to buy, which include additional filters, effects and themes. If you're interested, head on over to the App Store link below to download Fotor and take advantage of a pretty great deal.
What do you think of the features offered by Fotor? Do you guys already have a preferred photo editing client? Share your thoughts in the comments.
- Fotor - free Download Now
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Reader comments
Photo editing tool Fotor makes in-app-purchases free for a limited time
Downloading now.
Very nice. When you download the app make sure you go through every editing tool and individually unlock everything that has a shopping cart or padlock on it. At least 20 different items. There is no central store, so don't think just because you unlocked all of the FX in one section there aren't more. Just open up a pic and go through each type of option and work your way through. Took about 3-4 minutes but worth it.
After downloading and unlocking the content, I got to thinking that maybe they are going to release a 5.0 update to the app and this is to generate interest?


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Video: Squirrel Gets Head Stuck in Yogurt Cup
This poor little squirrel, no doubt looking for a snack, got its head stuck in what looks like a discarded Yoplait cup. So are yogurt cups the new six-pack plastic rings? (Video, after the jump.) Remember to dispose of containers properly, kids!


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Got my PC running a few days ago, and wow. Everything on max settings and the framerate is still as smooth as butter. I've successfully been converted.
Got my PC running a few days ago, and wow. Everything on max settings and the framerate is still as smooth as butter. I've successfully been converted.
That's awesome, dude.
Waiting on Black Friday sales. But that recent price drop on Nvidia GPUs almost made me dive in.
Hoping to get a monitor in whatever form BF has over here this year. It seems to get bigger every year.
Just got this badass monitor.
Only $150 with warranty after rebates.
Nice, ASUS makes some good stuff!
My bro and I grabbed an HP 22BW for my mom and it looks great!
I snagged myself a 23" Dell UltraSharp last year for $180, best screen I have ever owned.
My laptop:
Not sure if my GPU idling at that temp is bad or not.
Means it's staying nice and cold - probably not flexing any serious muscle at the moment.
Now, fire up something demanding, and watch it sweat.
The laptop is probably very good at knowing when to not use the GPU for the sake of battery life. It could even just use the integrated for light stuff and that temp is just coming off other things.
You terrible person.
I have two monitors as of this day. Now I want my new monitor for my surfing and chatting and stuff, and #1 for playing and watching videos etc. Watching videos works fine, but games give me a bit of trouble. When I start a game and it runs, then go into my ICQ window on monitor #2, the game is minimized. As if I ALT+TABbed out of it with just one screen. Is there a way to prevent this, except playing games in windowed mode? If I have a game on monitor #1 running, I want it be up no matter what I do on monitor #2.
I actually don't think there's any way to solve this outside of windowed mode.
That sucks. Sorry about that.
I can split the two on my MacBook using VMWare Fusion, so you may want to try a virtual machine for the least system-intensive process.
Last edited by Wedge; 10-29-2013 at 11:19 PM.


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The Ohalavaru are a Bajoran religious group whose name translates as "Ohalu truthseekers". It was given to those members of the Bajoran faith who believed in the Ohalu texts which were considered heretical by others. (DS9 novel: Unity)
In 2376, Vedek Solis Tendren was the leader of the Ohalavaru movement and his supporters were pushing for him to run for the position of Kai against Vedek Yevir Linjarin. (DS9 - Mission Gamma novel: Cathedral)


text: Washougal -- The East County Family Resource Center will be able to continue its good works -- early-learning, child and family counseling and other support services -- thanks to a donation of $9,038 from the Rotary Clubs of Clark County. The money was raised at the Rotarians Fore A Cause golf tournament on Oct. 10 at Orchard Hills Country Club. The East County Family Resource Center, operated by the Children's Home Society of Washington, is at 1702 C St. in Washougal.


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Using the Media (Resource Book Only) eBookGrade 6|Grade 7|Grade 8
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Using the Media: Fact, Fiction, and Opinion presents middle school students with clues to discriminating among fact, fiction, and opinion in media messages.
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As part of Percona Remote DBA for MySQL service we recognize that reliable backups are one of the most important things we can bring to the table. In my experience handling emergencies, the single worst thing that can happen is finding out you don't have backups available when some sort of data loss or catastrophic […]
Search Results for: mysql error 150 frm
More on MySQL Error Messages
I wrote about MySQL Error Messages before and as you might guess I'm not very happy with quality for error messages it produces. Now I'm revisiting this subject with couple of more annoying examples I ran into during last couple of days.
mysql> drop database test;
ERROR 1010 (HY000): Error dropping database (can't rmdir './test/', errno: 17)
MySQL Error Message Nonsenses
What MySQL honestly was never good at is giving good helpful error messages. Start with basics for example – The error message in case of syntax error gives you information about tokens near by but little details:
mysql> select * from user oder by pwd;
ERROR 1064 (42000): You have an error in your SQL syntax; check the manual that corresponds to your MySQL server version for the right syntax to use near 'by pwd' at line 1
It would be much better if MySQL would give error give exact position of error (with complex […]