text:
A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.
1. A method for depositing a layer over a substrate disposed in a process chamber, the substrate having an electrical resistivity between about 1 and 100 Ωcm, the method comprising:
flowing a gaseous mixture comprising a silicon-containing gas and a hydrocarbon-containing gas to the process chamber;
generating a plasma from the gaseous mixture, the plasma having an ion density greater than about 1011 ions/cm3; and
applying an electrical bias to the substrate, the electrical bias having a power density between about 0.65 and 1.30 W/cm2.
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15. A computer-readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system including a process chamber; a plasma generation system; a substrate holder; a gas delivery system configured to introduce gases into the process chamber, the computer-readable program including instructions for operating the substrate processing system to form a layer on a substrate disposed in the processing chamber, the substrate having an electrical resistivity between about 1 and 100 Ωcm, in accordance with the following:
flowing a gaseous mixture comprising a silicon-containing gas and a hydrocarbon-containing gas to the process chamber;
generating a plasma from the gaseous mixture, the plasma having an ion density greater than about 1011 ions/cm3; and
applying an electrical bias to the substrate, the electrical bias having a power density between about 0.65 and 1.30 W/cm2.
16. The computer-readable storage medium recited in
17. A substrate processing system comprising:
a housing defining a process chamber;
a plasma-generating system coupled to the process chamber;
a substrate holder, configured to hold a substrate during substrate processing;
a bias generator coupled to the substrate holder;
a gas-delivery system configured to introduce gases into the process chamber;
a controller for controlling the gas delivery system and the plasma generating system; and
a memory coupled to the controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the substrate processing system, the computer-readable program including:
instructions directing the gas delivery system to flow a gaseous mixture comprising a silicon-containing gas and a hydrocarbon-containing gas to the process chamber;
instructions directing the plasma-generating system to generate a plasma from the gaseous mixture, the plasma having an ion density greater than about 1011 ions/cm3; and
instructions directing the bias generator to apply an electrical bias to the substrate, the electrical bias having a power density between about 0.65 and 1.30 W/cm2.
18. The substrate processing system recited in
In conventional integrated circuit fabrication, circuit elements are formed by etching a pattern of gaps in a layer of metal such as aluminum. The gaps are then filled with a dielectric such as silicon dioxide. Copper has increasingly been used as an on-chip conductor for all types of integrated circuitry because of its lower resistance when compared with aluminum alloys. It is, however, difficult to etch copper and, as a result, damascene processes have been developed particularly for the fabrication of copper-based integrated circuits. In such damascene processes, dielectric layers are deposited to form an integrated stack and then etched to form gaps that are subsequently filled with copper.
Fluorosilicate glass ("FSG") is an attractive replacement for conventional silicon dioxide as an intermetal dielectric for damascene structures. Not only can FSG be deposited with a conventional high-density-plasma ("HDP") chemical-vapor-deposition ("CVD") system, it also has a good process scheme in terms of reliability, stability, and throughput. The electrical performance of integrated circuits is generally significantly improved by the lower dielectric constant of FSG (k about 3.3-3.6) as compared with conventional silicon oxides (k about 4.1-4.3). The lower dielectric constant reduces the capacitance between metal lines in the same layer and reduces crosstalk across layers.
The dielectric layers that separate layers of copper in a damascene structure are often referred to as intermetal dielectric ("IMD") layers. Such IMD layers typically include a barrier layer to prevent diffusion of copper into adjacent dielectric layers such as FSG. Some integrated stacks used in damascene processes also use an etch stop or hardmask to provide for selective etching of the layer. Silicon nitride SixNy is commonly used for such a barrier layer in damascene applications, such as when forming vias between layers containing metal lines. The dielectric constant for silicon nitride is, however, about 7.0 to 7.5, substantially higher than for either conventional undoped silicon oxide or FSG. As a consequence, a dielectric layer containing silicon nitride has an undesirably high fringe capacitance.
Accordingly, silicon-carbon-hydrogen-based low-k barrier layers, such as Applied Materials' BLOK™, have been developed. Such low-k barrier layers are typically deposited by plasma-enhanced chemical-vapor deposition ("PECVD") using trimethylsilane ("TMS"). While the deposition of BLOK™ provides capping solutions suitable for numerous processes, alternative applications remain desirable to enhance process integration. In addition, it is generally desirable that there be a process capable of depositing a SiC-based layer with a high refractive index, good hardness, and low current leakage.
There thus remains generally a need in the art for an inexpensive method for depositing a SiC-based layer with materials properties that make it suitable for particular desired applications.
Embodiments of the invention provide a method for depositing a SiC-based layer on a substrate. The resulting layer has desirable materials properties, including a low dielectric constant, good hardness, and an electrical breakdown voltage suitable for fuse applications. The layer deposited according to embodiments of the invention thereby finds applications as a barrier layer in dual damascene structures, in printer-head structures, in packaging structures, and in programmable logic devices.
The layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ωcm. The substrate is disposed in a process chamber. A gaseous mixture comprising a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011 ions/cm3 is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.
In one embodiment, the hydrocarbon-containing gas is provided to the process chamber with flow rate that is between 10 and 30 times as great as the flow rate for the silicon-containing gas. The resulting SiC-based layer may have an atomic C:Si ratio less than 7:1. In some embodiments, the hydrocarbon-containing gas comprises an alkane and the silicon-containing gas comprises a silane. The gaseous mixture may also include an inert gas, such as Ar.
The methods of the present invention may be embodied in a computer-readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system. Such a system may include a process chamber, a plasma generation system, a substrate holder, a gas delivery system, and a system controller. The computer-readable program includes instructions for operating the substrate processing system to form a thin layer on a substrate disposed in the processing chamber in accordance with the embodiments described above.
A further understanding of the nature and advantages of the present invention may be realized by reference to the remaining portions of the specification and the drawings.
The present invention, as well as its advantages and features, is now described in detail with reference to the accompanying drawings. In some instances, several figures are identified as subparts. Reference to such a group of figures generically without specific reference to a subpart is intended to refer to all subparts of the figure.
1. Introduction
Embodiments of the invention thus permit deposition of a low-k SiC layer with an HDP-CVD process that uses a gaseous mixture that includes a hydrocarbon-containing gas such as methane and a silicon-containing gas such as silane. The plasma has a high density, meaning that the ion density exceeds 1011 ions/cm3. By applying a small RF bias to the substrate during deposition of the SiC layer, it forms with materials properties that make it widely suitable for a variety of applications. For example, the low dielectric constant makes the layer suitable as a barrier to Cu diffusion in dual damascene semiconductor structures. The layer also has a large breakdown voltage and low leakage current density, making it especially suitable for fuse applications in, for example, programmable logic devices. The layer has a large hardness, which makes it suitable, for example, for packaging and printer-head applications.
Hydrocarbon gases generally contain only carbon and hydrogen in a formula of the type CxHm. Such hydrocarbon compounds include alkanes having the general formula CxHx+2. Typical alkanes include methane CH4, ethane C2H6, butane C3H8, propane C4H10, pentane C5H12, hexane C6H14, etc. These compounds are inexpensive, readily available at high purity (e.g., electronic or CMOS grade), nonproprietary, and are normally gases at ambient temperature and pressure. Alternatively, other hydrocarbons, including alkenes or alkynes such as acetylene C2H2 may be used as the hydrocarbon-containing gas. The term "hydrocarbon" as used herein also includes all isomers of the various alkanes, alkenes, alkynes, and other hydrocarbons. Additionally, the hydrocarbon-containing gas may be a mixture that includes two or more different types of hydrocarbon compounds.
The silicon-containing gas is generally a hydride of silicon having the general formula SiyHn. Hydrides of silicon include silanes having the general formula SiyH2y+2. Such silanes include monosilane SiH4, disilane Si2H6, trisilane Si3H8, tetrasilane Si4H10, pentasilane Si5H12, hexasilane Si6H14, etc. Alternative silicon-containing gases include halides of silicon such as silicon tetrafluoride SiF4 and silazanes. The silicon-containing gas may also be a mixture that includes two or more different types of hydrides of silicon or other silicon compounds.
In the plasma, the hydrocarbon- and silicon-containing gases are dissociated and react to form a layer on a surface of the substrate. In some embodiments, the gaseous mixture may also include an inert gas, such as argon Ar, to promote gas dissociation. Gas dissociation is also further promoted by the high plasma density of the HDP process. The high plasma density is also desirable for barrier-layer deposition when forming integrated stacks, including an IMD layer since HDP-CVD can deposit other layers of the stack, such as an FSG layer. Deposition with HDP-CVD of both the barrier layer and the FSG layer enhances process integration since a barrier layer typically lies on top of or underneath an FSG layer in the stack.
The refractive index and other properties of the barrier layer depend on the relative content of carbon in the deposited layer. Generally, the higher the carbon content in the layer, the lower the refractive index. To provide deposited SiC-based layers having a refractive index greater than 2.0, the atomic ratio of carbon to silicon in the layer should be less than about 7:1. As described below, suitable adjustment of the ratio of the flows of the hydrocarbon-containing gas to the silicon-containing gas controls the relative carbon content in the deposited layer.
An unusual discovery of the inventors regarding the deposition of SiC-based layers with hydrocarbon- and silicon-containing gas flows is the need for careful temperature control of the substrate. Unlike the deposition of many varied types of layers, including undoped silicon oxide, phosphorus-doped silicon oxide, fluorine-doped silicon oxide, silicon nitride, and SiON, the temperature of the substrate tends to decrease as the deposition of the SiC-based layer progresses by HDP-CVD. The decrease in temperature has been observed to be as great as 50į C. within 120 seconds of the deposition. It is speculated that freon may be formed in the plasma and then acts as a refrigerant to cool the wafer.
Regardless of the actual mechanism that causes the cooling, controlling the substrate temperature improves the depth homogeneity of the SiC-based layer as it is deposited. It has been found that the substrate temperature is not adequately controlled simply with source power for a number of reasons. For example, there is considerable diversity in the materials properties of substrates, which may include, for example, patterned, nonpatterned, low- and high-resistivity wafers. This diversity renders the application of source RF power is inconsistent. Also, the efficiency of substrate heating is highly dependent on it surface properties, with metallic-covered substrates tending to reflect heat and oxide-covered substrates tending to store heat. Furthermore, chamber-to-chamber matching issues are significant when source RF power is used as a substrate heating mechanism.
Accordingly, embodiments of the invention apply electrical bias to the substrate to deposit SiC-based layers using HDP-CVD. The bias power density is generally between about 0.65 and 1.30 W/cm2. For a 200-mm wafer, this corresponds to a power range of about 200-400 W, and for a 300-mm wafer corresponds to a power range of about 450-900 W. This should be contrasted with the bias typically applied in, for example, gapfill applications where sputter is desirable; there the bias power density is typically on the order of 25 W/cm2. The application of the relatively very low bias during HDP deposition of SiC-based layers, however, results in an increased refractive index, mitigates low-temperature outgassing, and results in a layer having the same bonding structure as HDP-CVD SiC deposited without the application of bias.
Bias power has not normally been used in such deposition processes for two reasons. First, the plasma contains hydrogen that is readily dissociated from the alkane and silane gases, and ionized in the high-density plasma. The application of bias to the substrate tends to energize the resulting hydrogen ions, causing them to bombard the wafer. If the bias is sufficiently high, this results in implantation of hydrogen into the wafer, which is normally undesirable since implanted hydrogen can easily diffuse into elements of the integrated-circuit device structures that may be formed on the substrate. Second, if an inert gas such as argon is present in the high-density plasma, the application of bias will tend to increase its effect as a sputtering agent by causing Ar ions to bombard the substrate energetically. The energetic bombardment can sputter material from the substrate, causing sputtered material to be deposited on the walls of the chamber and thereby requiring more frequent cleaning. Perhaps more importantly, however, argon sputtering can also break bonds, such as Si—C bonds, in the layer being deposited, thereby making the deposited layer more susceptible to moisture absorption.
Copending and commonly assigned U.S. application Ser. No. 09/431,411, filed Nov. 1, 1999 by Hichem M'Saad et al. and entitled "BARRIER LAYER DEPOSITION USING HDP-CVD," the entire disclosure of which is herein incorporated by reference for all purposes, teaches the application of a low bias power for deposition of SiC-based layers on low-resistivity wafers. In particular, it discloses that RF bias may be used for heating epitaxial silicon ("epi") wafers, which have a resistivity of only 0.01-0.02 Ωcm. By contrast, the inventors have discovered that the application of a low bias power with HDP-CVD can be used to achieve the desired refractive index of SiC-based layers deposited on normal silicon wafers having a resistivity in the range 1-100 Ωcm. The bias power density used, in the range 0.65-1.30 Ωcm, is sufficient to achieve the desired properties and low enough to minimize the potential sputtering and hydrogen implantation problems.
2. Exemplary HDP-CVD Substrate Processing System
The upper portion of chamber 13 includes a dome 14, which is made of a ceramic dielectric material, such as aluminum oxide or aluminum nitride. Dome 14 defines an upper boundary of a plasma processing region 16. Plasma processing region 16 is bounded on the bottom by the upper surface of a substrate 17 and a substrate support member 18.
A heater plate 23 and a cold plate 24 surmount, and are thermally coupled to, dome 14. Heater plate 23 and cold plate 24 allow control of the dome temperature to within about Ī10 C. over a range of about 100 C. to 200 C. This allows optimizing the dome temperature for the various processes. For example, it may be desirable to maintain the dome at a higher temperature for cleaning or etching processes than for deposition processes. Accurate control of the dome temperature also reduces the flake or particle counts in the chamber and improves adhesion between the deposited layer and the substrate.
The lower portion of chamber 13 includes a body member 22, which joins the chamber to the vacuum system. A base portion 21 of substrate support member 18 is mounted on, and forms a continuous inner surface with, body member 22. Substrates are transferred into and out of chamber 13 by a robot blade (not shown) through an insertion/removal opening (not shown) in the side of chamber 13. Lift pins (not shown) are raised and then lowered under the control of a motor (also not shown) to move the substrate from the robot blade at an upper loading position 57 to a lower processing position 56 in which the substrate is placed on a substrate receiving portion 19 of substrate support member 18. Substrate receiving portion 19 includes an electrostatic chuck 20 that secures the substrate to substrate support member 18 during substrate processing. In a preferred embodiment, substrate support member 18 is made from an aluminum oxide or aluminum ceramic material.
Vacuum system 70 includes throttle body 25, which houses twin-blade throttle valve 26 and is attached to gate valve 27 and turbo-molecular pump 28. It should be noted that throttle body 25 offers minimum obstruction to gas flow, and allows symmetric pumping, as described in co-pending, co-assigned U.S. patent application Ser. No. 08/574,839, filed Dec. 12, 1995, and which is incorporated herein by reference. Gate valve 27 can isolate pump 28 from throttle body 25, and can also control chamber pressure by restricting the exhaust flow capacity when throttle valve 26 is fully open. The arrangement of the throttle valve, gate valve, and turbo-molecular pump allow accurate and stable control of chamber pressures from between about 1 millitorr to about 2 Torr.
The source plasma system 80A includes a top coil 29 and side coil 30, mounted on dome 14. A symmetrical ground shield (not shown) reduces electrical coupling between the coils. Top coil 29 is powered by top source RF (SRF) generator 31A, whereas side coil 30 is powered by side SRF generator 31B, allowing independent power levels and frequencies of operation for each coil. This dual coil system allows control of the radial ion density in chamber 13, thereby improving plasma uniformity. Side coil 30 and top coil 29 are typically inductively driven, which does not require a complimentary electrode. In a specific embodiment, the top source RF generator 31A provides up to 2,500 watts of RF power at nominally 2 MHz and the side source RF generator 31B provides up to 5,000 watts of RF power at between 1.8 and 2.2 MHz, nominally at 2 MHz. The operating frequencies of the top and side RF generators may be offset from the nominal operating frequency (e.g. to 1.7-1.9 MHz and 1.9-2.1 MHz, respectively) to improve plasma-generation efficiency.
A bias plasma system 80B includes a bias RF (BRF) generator 31C and a bias matching network 32C. The bias plasma system 80B capacitively couples substrate portion 17 to body member 22, which act as complimentary electrodes. The bias plasma system 80B serves to enhance the transport of plasma species (e.g., ions) created by the source plasma system 80A to the surface of the substrate. BRF generator 31C provides RF power at a frequency ranging from about 1-100. In a specific embodiment, BRF generator 31C provides up to 5,000 watts of RF power at 13.56 MHz.
RF generators 31A and 31B include digitally controlled synthesizers and operate over a frequency range between about 1.8 to about 2.2 MHz. Each generator includes an RF control circuit (not shown) that measures reflected power from the chamber and coil back to the generator and adjusts the frequency of operation to obtain the lowest reflected power, as understood by a person of ordinary skill in the art. RF generators are typically designed to operate into a load with a characteristic impedance of 50 ohms. RF power may be reflected from loads that have a different characteristic impedance than the generator. This can reduce power transferred to the load. Additionally, power reflected from the load back to the generator may overload and damage the generator. Because the impedance of a plasma may range from less than 5 ohms to over 900 ohms, depending on the plasma ion density, among other factors, and because reflected power may be a function of frequency, adjusting the generator frequency according to the reflected power increases the power transferred from the RF generator to the plasma and protects the generator. Another way to reduce reflected power and improve efficiency is with a matching network.
Matching networks 32A and 32B match the output impedance of generators 31A and 31B with their respective coils 29 and 30. The RF control circuit may tune both matching networks by changing the value of capacitors within the matching networks to match the generator to the load as the load changes. The RF control circuit may tune a matching network when the power reflected from the load back to the generator exceeds a certain limit. One way to provide a constant match, and effectively disable the RF control circuit from tuning the matching network, is to set the reflected power limit above any expected value of reflected power. This may help stabilize a plasma under some conditions by holding the matching network constant at its most recent condition.
Other measures may also help stabilize a plasma. For example, the RF control circuit can be used to determine the power delivered to the load (plasma) and may increase or decrease the generator output power to keep the delivered power substantially constant during deposition of a layer.
A gas delivery system 33 provides gases from several sources, 34A-34F chamber for processing the substrate via gas delivery lines 38 (only some of which are shown). As would be understood by a person of skill in the art, the actual sources used for sources 34A-34F and the actual connection of delivery lines 38 to chamber 13 varies depending on the deposition and cleaning processes executed within chamber 13. Gases are introduced into chamber 13 through a gas ring 37 and/or a top nozzle 45.
In one embodiment, first and second gas sources, 34A and 34B, and first and second gas flow controllers, 35A′ and 35B′, provide gas to ring plenum 36 in gas ring 37 via gas delivery lines 38 (only some of which are shown). Gas ring 37 has a plurality of first source gas nozzles 39 (only one of which is shown for purposes of illustration) that provide a uniform flow of gas over the substrate. Nozzle length and nozzle angle may be changed to allow tailoring of the uniformity profile and gas utilization efficiency for a particular process within an individual chamber. In a preferred embodiment, gas ring 37 has 12 source gas nozzles made from an aluminum oxide ceramic.
Gas ring 37 also has a plurality of second source gas nozzles 40 (only one of which is shown), which in a preferred embodiment are co-planar with and shorter than first source gas nozzles 39, and in one embodiment receive gas from body plenum 41. In some embodiments it is desirable not to mix different types of source gases before injecting the gases into chamber 13. In other embodiments, and source gases may be mixed prior to injecting the gases into chamber 13 by providing apertures (not shown) between body plenum 41 and gas ring plenum 36. In one embodiment, third and fourth gas sources, 34C and 34D, and third and fourth gas flow controllers, 35C and 35D′, provide gas to body plenum via gas delivery lines 38. The nitrogen source 34F provides nitrogen gas (N2) to the second source gas nozzles 40 of the gas ring to the chamber for process steps utilizing nitrogen plasma. Alternatively, the nitrogen gas could be delivered to the chamber through other or additional inlets, such as the top nozzle 45 via gas flow controller 35F′. Additional valves, such as 43B (other valves not shown), may shut off gas from the flow controllers to the chamber.
In embodiments where flammable, toxic, or corrosive gases are used, it may be desirable to eliminate gas remaining in the gas delivery lines after a deposition. This may be accomplished using a 3-way valve, such as valve 43B, to isolate chamber 13 from delivery line 38A and to vent delivery line 38A to vacuum foreline 44, for example. As shown in
Referring again to
A remote microwave-generated plasma cleaning system 50 is provided to periodically clean deposition residues from chamber components. The cleaning system includes a remote microwave generator 51 that creates a plasma from a cleaning gas source 34E (e.g., molecular fluorine, nitrogen trifluoride, other fluorocarbons or equivalents) in reactor cavity 53. The reactive species resulting from this plasma are conveyed to chamber 13 through cleaning gas feed port 54 via applicator tube 55. The materials used to contain the cleaning plasma (e.g., cavity 53 and applicator tube 55) must be resistant to attack by the plasma. The distance between reactor cavity 53 and feed port 54 should be kept as short as practical, since the concentration of desirable plasma species may decline with distance from reactor cavity 53. Generating the cleaning plasma in a remote cavity allows the use of an efficient microwave generator and does not subject chamber components to the temperature, radiation, or bombardment of the glow discharge that may be present in a plasma formed in situ. Consequently, relatively sensitive components, such as electrostatic chuck 20, do not need to be covered with a dummy wafer or otherwise protected, as may be required with an in situ plasma cleaning process.
System controller 60 controls the operation of system 10. In a preferred embodiment, controller 60 includes a memory 62, such as a hard disk drive, a floppy disk drive (not shown), and a card rack (not shown) coupled to a processor 61. The card rack may contain a single-board computer (SBC) (not shown), analog and digital input/output boards (not shown), interface boards (not shown), and stepper motor controller boards (not shown). The system controller conforms to the Versa Modular European (VME) standard, which defines board, card cage, and connector dimensions and types. The VME standard also defines the bus structure as having a 16-bit data bus and 24-bit address bus. System controller 31 operates under the control of a computer program stored on the hard disk drive or through other computer programs, such as programs stored on a removable disk. The computer program dictates, for example, the timing, mixture of gases, RF power levels and other parameters of a particular process. The interface between a user and the system controller is via a monitor, such as a cathode ray tube (CRT) 65, and a light pen 66, as depicted in FIG. 1C.
System controller 60 operates under the control of a computer program 63 stored in a computer-readable format within memory 62. The computer program dictates the timing, temperatures, gas flows, RF power levels and other parameters of a particular process. The interface between a user and the system controller is via a CRT monitor 65 and a light pen 66, as depicted in FIG. 1C. In a preferred embodiment, two monitors, 65 and 65A, and two light pens, 66 and 66A, are used, one mounted in the clean room wall (65) for the operators and the other behind the wall (65A) for the service technicians. Both monitors simultaneously display the same information, but only one light pen (e.g. 66) is enabled. To select a particular screen or function, the operator touches an area of the display screen and pushes a button (not shown) on the pen. The area touched confirms being selected by the light pen by changing its color or displaying a new menu, for example.
The computer program code can be written in any conventional computer-readable programming language such as 68000 assembly language, C, C++, FORTRAN, Pascal or other language. Suitable program code is entered into a single file, or multiple files, using a conventional text editor and is stored or embodied in a computer-usable medium, such as a memory system of the computer. If the entered code text is in a high level language, the code is compiled, and the resultant compiler code is then linked with an object code of precompiled windows library routines. To execute the linked compiled object code, the system user invokes the object code causing the computer system to load the code in memory. The CPU reads the code from memory and executes the code to perform the tasks identified in the program.
The signals for monitoring the process are provided by the analog and digital input boards of system controller 60, and the signals for controlling the process are output on the analog and digital output boards of system controller 60.
A process sequencer subroutine 75 comprises program code for accepting the identified process chamber and set of process parameters from the process selector subroutine 73 and for controlling operation of the various process chambers. Multiple users can enter process set numbers and process chamber numbers, or a single user can enter multiple process set numbers and process chamber numbers; sequencer subroutine 75 schedules the selected processes in the desired sequence. Preferably, sequencer subroutine 75 includes a program code to perform the steps of (i) monitoring the operation of the process chambers to determine if the chambers are being used, (ii) determining what processes are being carried out in the chambers being used, and (iii) executing the desired process based on availability of a process chamber and type of process to be carried out. Conventional methods of monitoring the process chambers can be used, such as polling. When scheduling which process is to be executed, sequencer subroutine 75 can be designed to take into consideration the "age of each particular user-entered request, or the present condition of the process chamber being used in comparison with the desired process conditions for a selected process, or any other relevant factor a system programmer desires to include for determining scheduling priorities.
After sequencer subroutine 75 determines which process chamber and process set combination is going to be executed next, sequencer subroutine 75 initiates execution of the process set by passing the particular process set parameters to a chamber manager subroutine 77 a-c, which controls multiple processing tasks in chamber 13 and possibly other chambers (not shown) according to the process set sent by sequencer subroutine 75.
Examples of chamber component subroutines are substrate positioning subroutine 80, process gas control subroutine 83, pressure control subroutine 85, and plasma control subroutine 87. Those having ordinary skill in the art will recognize that other chamber control subroutines can be included depending on what processes are selected to be performed in chamber 13. In operation, chamber manager subroutine 77 a selectively schedules or calls the process component subroutines in accordance with the particular process set being executed. Chamber manager subroutine 77 a schedules process component subroutines in the same manner that sequencer subroutine 75 schedules the process chamber and process set to execute. Typically, chamber manager subroutine 77 a includes steps of monitoring the various chamber components, determining which components need to be operated based on the process parameters for the process set to be executed, and causing execution of a chamber component subroutine responsive to the monitoring and determining steps.
Operation of particular chamber component subroutines will now be described with reference to
Process gas control subroutine 83 has program code for controlling process gas composition and flow rates. Subroutine 83 controls the open/close position of the safety shut-off valves and also ramps up/ramps down the mass flow controllers to obtain the desired gas flow rates. All chamber component subroutines, including process gas control subroutine 83, are invoked by chamber manager subroutine 77 a. Subroutine 83 receives process parameters from chamber manager subroutine 77 a related to the desired gas flow rates.
Typically, process gas control subroutine 83 opens the gas supply lines, and repeatedly (i) reads the necessary mass flow controllers, (ii) compares the readings to the desired flow rates received from chamber manager subroutine 77 a, and (iii) adjusts the flow rates of the gas supply lines as necessary. Furthermore, process gas control subroutine 83 may include steps for monitoring the gas flow rates for unsafe rates and for activating the safety shut-off valves when an unsafe condition is detected.
In some processes, an inert gas, such as argon, is flowed into chamber 13 to stabilize the pressure in the chamber before reactive process gases are introduced. For these processes, the process gas control subroutine 83 is programmed to include steps for flowing the inert gas into chamber 13 for an amount of time necessary to stabilize the pressure in the chamber. The steps described above may then be carried out.
Additionally, when a process gas is to be vaporized from a liquid precursor, for example, tetraethylorthosilane (TEOS), the process gas control subroutine 83 may include steps for bubbling a delivery gas such as helium through the liquid precursor in a bubbler assembly or for introducing the helium to a liquid injection valve. For this type of process, the process gas control subroutine 83 regulates the flow of the delivery gas, the pressure in the bubbler, and the bubbler temperature to obtain the desired process gas flow rates. As discussed above, the desired process gas flow rates are transferred to process gas control subroutine 83 as process parameters.
Furthermore, the process gas control subroutine 83 includes steps for obtaining the necessary delivery gas flow rate, bubbler pressure, and bubbler temperature for the desired process gas flow rate by accessing a stored table containing the necessary values for a given process gas flow rate. Once the necessary values are obtained, the delivery gas flow rate, bubbler pressure and bubbler temperature are monitored, compared to the necessary values and adjusted accordingly.
The process gas control subroutine 83 may also control the flow of heat-transfer gas, such as helium (He), through the inner and outer passages in the wafer chuck with an independent helium control (IHC) subroutine (not shown). The gas flow thermally couples the substrate to the chuck. In a typical process, the wafer is heated by the plasma and the chemical reactions that form the layer, and the He cools the substrate through the chuck, which may be water-cooled. This keeps the substrate below a temperature that may damage preexisting features on the substrate.
Pressure control subroutine 85 includes program code for controlling the pressure in chamber 13 by regulating the size of the opening of throttle valve 26 in the exhaust portion of the chamber. There are at least two basic methods of controlling the chamber with the throttle valve. The first method relies on characterizing the chamber pressure as it relates to, among other things, the total process gas flow, the size of the process chamber, and the pumping capacity. The first method sets throttle valve 26 to a fixed position. Setting throttle valve 26 to a fixed position may eventually result in a steady-state pressure.
Alternatively, the chamber pressure may be measured, with a manometer for example, and the position of throttle valve 26 may be adjusted according to pressure control subroutine 85, assuming the control point is within the boundaries set by gas flows and exhaust capacity. The former method may result in quicker chamber pressure changes, as the measurements, comparisons, and calculations associated with the latter method are not invoked. The former method may be desirable where precise control of the chamber pressure is not required, whereas the latter method may be desirable where an accurate, repeatable, and stable pressure is desired, such as during the deposition of a layer.
When pressure control subroutine 85 is invoked, the desired, or target, pressure level is received as a parameter from chamber manager subroutine 77 a. Pressure control subroutine 85 measures the pressure in chamber 13 by reading one or more conventional pressure manometers connected to the chamber; compares the measured value(s) to the target pressure; obtains proportional, integral, and differential (PID) values from a stored pressure table corresponding to the target pressure, and adjusts throttle valve 26 according to the PID values obtained from the pressure table. Alternatively, pressure control subroutine 85 may open or close throttle valve 26 to a particular opening size to regulate the pressure in chamber 13 to a desired pressure or pressure range.
Plasma control subroutine 87 comprises program code for controlling the frequency and power output setting of RF generators 31A and 31B and for tuning matching networks 32A and 32B. Plasma control subroutine 87, like the previously described chamber component subroutines, is invoked by chamber manager subroutine 77 a.
An example of a system that may incorporate some or all of the subsystems and routines described above would be the ULTIMA™ system, manufactured by APPLIED MATERIALS, INC., of Santa Clara, Calif. configured to practice the present invention. Further details of such a system are disclosed in U.S. patent application Ser. No. 08/679,927, filed Jul. 15, 1996, entitled "Symmetric Tunable Inductively-Coupled HDP-CVD Reactor," having Fred C. Redeker, Farhad Moghadam, Hirogi Hanawa, Tetsuya Ishikawa, Dan Maydan, Shijian Li, Brian Lue, Robert Steger, Yaxin Wang, Manus Wong and Ashok Sinha listed as co-inventors, the disclosure of which is incorporated herein by reference. The described system is for exemplary purpose only. It would be a matter of routine skill for a person of skill in the art to select an appropriate conventional substrate processing system and computer control system to implement the present invention.
3. Exemplary Structures
A premetal dielectric (PMD) layer 221 separates transistors 203 and 206 from metal layer 240 with connections between metal layer 240 and the transistors made by contacts 224. Metal layer 240 is one of four metal layers, 240, 242, 244 and 246, included in integrated circuit 200. Each metal layer 240, 242, 244, and 246 is separated from adjacent metal layers by respective inter-metal dielectric (IMD) layers 227, 228, or 229. Adjacent metal layers are connected at selected openings by vias 226. Deposited over metal layer 246 are planarized passivation layers 230.
It should be understood that simplified integrated circuit 200 is for illustrative purposes only. One of ordinary skill in the art could implement use of the present invention in relation to fabrication of other integrated circuits such as microprocessors, application specific integrated circuits (ASICs), memory devices, and the like. Further, the present invention may be applied to PMOS, NMOS, CMOS, bipolar, or BiCMOS devices.
a. Exemplary Barrier-layer Deposition
Certain applications of the invention provide for deposition of a low-dielectric-constant barrier layer. Such applications may be understood with reference to
The first of the two embodiments may be understood by referring to
The desired materials properties of the barrier layer 404, including its dielectric constant k and refractive index, depend on the ratio of carbon to silicon atoms in the layer. As stated above, a refractive index greater than 2.0 can be achieved with an atomic ratio of carbon to silicon in the layer ("C:Si ratio") less than about 7:1. The C:Si ratio in the layer depends in turn on the ratio of carbon to silicon atoms in the gaseous flows. This may be understood with reference to
It has been discovered that the refractive index may be used to characterize different process regimes. For a refractive index less than about 1.8, the SiC layer has a columnar structure; for a refractive index between about 1.8 and 2.0, the SiC layer has an amorphous graphite structure; and for a refractive index greater than about 2.0, the SiC layer has a hydrogenated amorphous carbon structure.
The gas mixture is energized at block 306 to form a plasma for depositing the barrier layer 404 on a substrate 402, such as silicon. For HDP-CVD applications, the plasma has an ion density of about 1011 ions/cm3 or greater. The plasma may be generated by any suitable plasma generating system, such as source plasma system 80A and/or bias plasma system 80B of FIG. 1A. For example, in an HDP chamber such as chamber 13, between 1000 and 1500 W of RF power are applied to top coil 29 and between 2000 and 3500 W applied to side coil 30 for a 200-mm wafer. A bias with a power density between about 0.65 and 1.30 W/cm2(200-400 W for a 200-mm wafer) is applied to the substrate at block 308 so that the barrier layer 404 is deposited at block 310. Appropriate flow rates when using CH4, SiH4, and Ar are between 150 and 300 sccm of CH4, between 150 and 250 sccm of Ar, and a relative flow rate of CH4 to SiH4 between 10 and 30.
A barrier layer such as barrier layer 404 may be part of an integrated stack that comprises several layers of material as shown in FIG. 4B. The method of
In an exemplary version of this embodiment, stack 401 is deposited on a substrate 409, such as a semiconductor wafer. In this embodiment the method 320 begins at block 322. The first layer is deposited at block 324 and a gaseous mixture with hydrocarbon- and silicon-containing gases is introduced to a process chamber containing substrate 409 at block 326. The gaseous mixture is energized at block 328 to form a high-density plasma and a bias is applied to the substrate 409 at block 330 for depositing the barrier layer 405 at block 332. The barrier layer 405 need not be very thick compared to the overall desired thickness of the integrated stack 401. In one exemplary embodiment, the barrier layer 405 amounts to between about 500-1000 Å out of a stack 401 having a total thickness of approximately 10,000 Å. Following deposition of barrier layer 405, second layer 407 may be deposited at block 334. In one embodiment, both the first and second layer 403 and 407 comprise layers of FSG deposited by HDP-CVD using SiH4, SiF4, O2, and Ar.
b. Exemplary Damascene Process
The barrier layer and integrated stack deposition described above with respect to
After the first etch, photoresist 508 is stripped, e.g., by ashing in an oxidizing environment. Gaps 510 and first FSG layer 506 are then covered with a layer of metal, such as aluminum or copper. In the case of copper, a seed layer 512 (
After planarization of copper layer 514, a second barrier layer 516, a second FSG layer 518, a third barrier layer 520, and a third FSG layer 522 are deposited to form an IMD layer 521 as shown in FIG. 6E. Layers 518, 520, and 522 may be deposited in the same HDP chamber to enhance process integration for forming IMD layer 521. A second lithography and etch forms vias 524 through layers 516, 518, 520 and 522 down to copper layer 514 as shown in FIG. 6F. In
Damascene processes are used in devices that use copper interconnects because there is currently no acceptable way to etch copper. Structures formed by damascene processes do not require a gap-fill dielectric and generally provide lower RC delays than similar structures formed using metal lines aluminum, tungsten, titanium or other metals. Furthermore, higher deposition rates may be used in damascene processes since gap-fill is not an issue. Any of barrier layers 506, 516 and 520 can be deposited using the alkane-silane barrier layer deposition described above with respect to
c. Applications
The properties of the SiC-based layers deposited according to embodiments of the invention makes them especially suitable for applications in which good hardness and low current-density leakage are useful. Some examples of such applications are described below, but those of skill in the art will recognize many other applications appropriate for the materials properties of the deposited layers.
One example of an application in which good hardness is beneficial is for printer heads. A typical ink-jet printer uses a non-impact method. Ink is emitted from nozzles as they pass over a variety of possible media, with liquid ink in various colors being squirted at the paper to build up an image. A printer head scans the page in horizontal strips, using a motor assembly to move it from left to right and back, as another motor assembly rolls the paper in vertical steps. The printer head may be fabricated using the techniques described above, the hardness of the barrier layer being useful for ensuring a long life for the printer head when used in this way.
Another application that makes use of good hardness is in the area of packaging. After a wafer is processed, the individual chips on the wafer surface are completed and the electrically functioning ones identified. The chips are subsequently incorporated into an individual protective package, mounted with other components in a hybrid or multichip modules, or connected directly onto a printed circuit board. The hardness of the SiC-based layer is useful in ensuring that the chips are well protected when packaged.
The electrical characteristics of the SiC-based layer, with its moderate breakdown voltage and low current-density leakage, make it especially suitable for fabricating fuses in a programmable logic device ("PLD"). As used herein, the term "programmable logic device" is used broadly to include a variety of devices where the logic may be programmed, including, without limitation, programmable read-only memories ("PROM"), field-programmable gate arrays ("FPGA"), and application-specific integrated circuits ("ASIC"), for example. Such devices typically function by using an array of fuses such as may be formed with the SiC-based layers, and selectively blowing some of those fuses to program the chip with user-specified information.
4. Experimental Results
A typical recipe for using HDP-CVD with substrate bias to deposit a SiC-based layer on a 200-mm wafer is set forth in Table I. The experimental results that follow explore the effect of varying some of the parameters, particularly on the refractive index and electrical properties.
The electrical characteristics of a SiC-based layer deposited with a small bias may be further understood from
The general trends for the breakdown electric field and leakage current density as a function of the refractive index are shown in FIG. 7F. The left ordinate shows the breakdown electric field and corresponds to the triangular data points, while the right ordinate shows the leakage current density and corresponds to the diamond-shaped data points. An increase in the refractive index has the effect of both increasing the breakdown electric field and reducing the leakage current density.
Various additional studies have been performed to evaluate the materials properties of a SiC-based layer deposited as described above, including testing its adhesion to layers formed with various other materials. A summary of the properties of a layer deposited with the recipe of Table I is set forth in Table II.
Having fully described several embodiments of the present invention, many other equivalent or alternative methods of depositing the low dielectric constant oxide layer according to the present invention will be apparent to those skilled in the art. These alternatives and equivalents are intended to be included within the scope of the present invention.
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platonic 1
See definition in Oxford Advanced Learner's DictionarySaltos de línea: pla|ton¦ic
Pronunciación: /pləˈtɒnɪk/
(Of love or friendship) intimate and affectionate but not sexual: their relationship is purely platonic platonic love
Más ejemplos en oraciones
- The widowed pair found their platonic arrangement suited them both.
- The relationship between Bob and Charlotte remains at the film's core, and remains platonic despite strong sexual undercurrents.
- Thirty previously unseen letters from the writer to the German-born actress and singer reveal an intense and flirtatious but apparently platonic relationship.
- 1
- Oraciones de ejemplo
- We would meet in dining halls, grab late meals and chat between classes - all platonically.
- I was platonically sharing a flat with a fellow student who, of course, slept in a separate bedroom.
- I have this friend that I've known platonically for about ten years.
Pronunciación: /pləˈtɒnɪk(ə)li/adverbio
Mid 17th century: from Platonic, with reference to a discussion of love in the Symposium by Plato.
Definición de platonic en:
See definition in Oxford Advanced Learner's DictionarySaltos de línea: Pla|ton¦ic
Pronunciación: /pləˈtɒnɪk/
1Of or associated with the Greek philosopher Plato or his ideas: readers of the Platonic dialogues a kind of Platonic ideal of a New York City apartment
Más ejemplos en oraciones
- An authoritarian response would be to delegate power to a paternalistic dictator, a Platonic philosopher king.
- I think that Greek Tragedy and the Platonic dialogues are positively riddled with irony.
- Garbo's face, still, white, perfect, like a mask, resembles the timeless Platonic ideal of beauty as it exists in the mind of God.
2Confined to words, theories, or ideals, and not leading to practical action: a Platonic gesture
Más ejemplos en oraciones
- An anti-capitalist movement must be equal to this, otherwise it will not be effective, unless of course you intend your movement to be merely Platonic.
- It would be more useful if our West European partners' position was less platonic and if they made a more energetic and persistent effort to pound it into the Americans.
- An eminent diplomatic commentator wrote that the action taken by France in response to atomic tests by South Africa would not be purely platonic.
Palabras que riman con Platonicanachronic, animatronic, bionic, Brythonic, bubonic, Byronic, canonic, carbonic, catatonic, chalcedonic, chronic, colonic, conic, cyclonic, daemonic, demonic, diatonic, draconic, electronic, embryonic, euphonic, harmonic, hegemonic, histrionic, homophonic, hypersonic, iconic, ionic, ironic, isotonic, laconic, macaronic, Masonic, Miltonic, mnemonic, monotonic, moronic, Napoleonic, philharmonic, phonic, Plutonic, polyphonic, quadraphonic, sardonic, saxophonic, siphonic, Slavonic, sonic, stereophonic, subsonic, subtonic, symphonic, tectonic, Teutonic, thermionic, tonic, transonic, ultrasonic
Definición de platonic en:
- Diccionario Inglés de EE.UU.
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Pepto Bismol's new slogan is "Pink tastes better than you think". Joint marketing agreement with Taco Bell in the works
Despite his booming film career, "American Pie" star Jason Biggs claims he'd be up for another AP sequel.
Still out of ideas, Hollywood plans to bring "Transformers", "Voltron", "Miami Vice", and "Dallas" to big screen…
George Clooney to remake "Network" on live TV; will play deranged
protagonist Howard Beale. Apparently, Clooney is a method actor.
Python bites off more than he can chew, ends up with indigestion.
'Super koala' habitat to be bulldozed. Nick Cage's baby wakes suddenly from a dream, cries a little.
Charlize Theron was spanked and whipped as a child. I'm sorry… I know this is horrible so I'm trying very hard to read this without finding it hot…and I can't do it. I just can't. In fact, I'm going to end this post now, as I lost the ability to function properly.
Please excuse me for a moment…


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Gardner Reaches Two Milestones
Fort Fairfield basketball coach Larry Gardner has had a big week. On Saturday he picked up his 300th career coaching win. On Tuesday night he picked up his 200th win as girls coach. Gardner spent nine years coaching the boys and has been running the girls program for the last 15 years.
Category: Sports


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in Problem solving
hello,I have a problem with moss on a stone wall,the moss has started to be covered in a jelly like substance that is killing it.Can anybody help identify the problem and offer a solutionto stop it from spreading? Joy.
It is a function of the wet weather. It will disappear when we get lots of sunshine and dry weather.
When will that be then ?!!


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Texas Three-Step: A daily look at Spurs, Rockets and Mavs
Mavericks only team to win; Spurs dominated by Lob City
CORPUS CHRISTI - This is the inaugural post in a new series I'll be doing called the Texas Three Step. This will be my daily recap post any time one of the Texas team plays an NBA game. All three Texas teams played last night, so let's get started.
STAR OF THE GAME: This one is tough to choose on a night in which the Clippers really spread the wealth around, but I'll go with center DeAndre Jordan. Jordan was a liability for the Clippers during their post-season series against the Spurs last year but he completely changed the game for them last night. He did a very good job on Tim Duncan (10 points and six rebounds), getting a tiny bit of redemption for the mastery Duncan performed on him in the post-season, and was rotating out to San Antonio's shooters, something he failed to do consistently last year. Jordan also grabbed 11 rebounds, blocked four shots (including a Duncan post shot, which doesn't happen very often) and scored 20 points on 10-of-12 shooting. Jordan's offense is just icing on the cake if he can deliver defensively, and last night for the best of both words for a very important player in the Clippers future.
WINNING MOMENT: Los Angeles put this game away with an explosive third quarter thanks to Chris Paul's usual brilliance. Paul had an off series against the Spurs last year (partly due to injury) but he looked great in this game and he was distributing the ball all over the place in the third. He assisted on five of the first six baskets that the Clippers scored coming out of halftime and he really set the tone for his teammates, who continued to move the ball well for the remainder of the game.
NUMBERS GAME: This was just the third time in the past three seasons that the Spurs scored 84 points or fewer when all three members of the big three took the floor. The other two sub-85 point outings came against a Los Angeles team, too: The Lakers.
TRENDING: Not much to like about last night's Spurs' performance. If there was one bright spot, it would be that Danny Green continued his hot start from deep to start the season. He shot 3-of-5 from deep last night and is sporting a 55% clip from long range on the season.
RECORD: 4-1, t-1st in the Southwest Division (t-1st in the West)
QUICK RECAP: The two things that stuck out in this game that made me think that this Clippers team has a shot to make it to the Conference Finals this season (particularly right now with OKC adjusting to their new team and the Lakers continuing to employ Mike Brown) is how well their depth matched San Antonio's and how well they defended.
Defense was not the strongsuit of their squad last year but I wrote about how impressive Eric Bledsoe was on that end of the floor during their series against the Spurs and the youngster has carried over his momentum to this year. Bledsoe really sets the tone defensively, and that's what he told me his goal was last year, and his ball pressure gets his teammates going. The Clippers have also added guys like Matt Barnes, Ronny Turiaf and Grant Hill (has not played yet due to injury) that are extremely active on that end of the floor and give their second unit a defensive identity. And, as I mentioned before, Jordan's improvements on defense are going to make a huge difference for Los Angeles, especially if he keeps talking on D like he did last night, if he keeps it up. That's not a guarantee - consistency is not his forte - but it's obvious that Vinny Del Negro wanted him to get him more involved in games this year (they like to start off games by posting him up on the first play) and it paid off last night.
LA's depth is impressive because of the versatility of their role players. Bledsoe is the best defensive point guard in the league and he's flashing playmaking ability now. He's can be a bit out of control at times because he is too fast for his dribble to keep up with and he isn't a great shooter, but he had 15 points and five assists last night, which is more than enough for him to add offensively when you consider what he does on the other end. Jamal Crawford is the early favorite for the Sixth Man of the Year award and he is absolutely scorching the net right now. Barnes can occasionally hit an open three and he's a smart cutter that is active defensively. Turiaf is a solid rebounder and cad defend a little bit. And this is without Hill and Chauncey Billups being active (I would assume Willie Green will drop to the bench when Billups returns) and with Lamar Odom (a huge wild card that could swing the Clippers to an elite level if he regains his Laker form once he's in shape) still getting back into basketball rhythm. The options they have allows for VDN to mix and match with Gregg Popovich's line-ups and that can be a key factor in the post-season.
It's hard to tell if the Clippers have been an extremely up-and-down team this season or if their two home losses to the Cavaliers and Warriors were a bit fluky (Dion Waiters and Carl Landry went bananas in those games). Either way you look at it, Los Angeles does have three pretty impressive wins against the Grizzlies, Lakers and Spurs.
STAR OF THE GAME: There were a couple of solid choices here but I'll go with Chris Kaman, who made his first start of the season in place of Elton Brand, who missed last night's game to be with his wife for the birth of their child. Kaman had two impressive games off the bench against the Bobcats and Blazers and he followed that up by putting up 22 points and eight rebounds against the Raptors. Kaman has been a key cog in Dallas' flowing pick-and-roll game because he's been hitting the mid-range jumper with consistency.
WINNING MOMENT: Dallas was up double digits for the majority of the third quarter and they had a 15 point lead with eight minutes left in the game, but the Raptors, who have been pesky and fun to watch all season long, wouldn't go away and made it a game in the fourth. It was just a five point game with five seconds left, which is when the Mavs posted up a German to hit a game icing shot. Sound familiar? Only instead of Dirk, it was Kaman, who posted up on the right block, backed down with two dribbles, faked the inside hook and spun to the baseline for a hookshot that went down.
NUMBERS GAME: Through five games, the Dallas Mavericks are scoring 1.032 points per possession, giving them the third most efficient offense in basketball (behind only Miami and New York), according to Synergy Sports Technology, despite missing Dirk Nowitzki. The key has been Dallas' spot-up shooting, as they have the most efficient collection of spot-up shooters in the league at this point of the season.
TRENDING: As I predicted in my season preview, O.J. Mayo has found his comfort zone in Rick Carlisle's offense and he is looking like a capable number one option on the perimeter. He's done a bit of ball-handling and a lot of spot-up shooting and he's scoring at an efficient clip. He had 22 points and six assists last night, marking his third straight game with at least that many.
A DIFFERENT DEBUT: Jae Crowder has played in all of Dallas' games this season, but last night he made his first career start. Crowder was replacing Shawn Marion, who will miss a few more games with a sprained MCL, and he played well, knocking down a couple of threes, grabbing four rebounds and making a difference defensively.
A VALIANT RETURN: After Portland head coach Terry Stotts made his first return to the American Airlines Center since leaving Carlisle's staff on Monday, former Mavs' assistant coach Dwane Casey made his second trip back to the AAC as the head coach of the Raptors. Casey had his Raptors fighting despite missing their best player (point guard Kyle Lowry) but they came up short at the end.
RECORD: 4-1, t-1st in the Southwest Division (t-1st in the West)
GAME RECAP: I said in my season preview for the Mavericks that I thought they had a good team but not one capable of withstanding their opening slate of games with Nowitzki on the shelf. Well, Dallas has obliterated that criticism and shocked the league by coming out of the gates ready to go. They embarrassed the Lakers on national TV to start the season and that performance kickstarted the confident run they are on right now. Darren Collison and Mayo have combined to form one of the league's more dynamic, exciting and fluid guard combinations and the litany of effective big men (Troy Murphy not included) that Carlisle have added a sense of completion to all of the line-ups he puts on the floor. I think Carlisle is the best coach in the league when it comes to assembling a rotation and despite numerous injuries to start the year, he's found a way to build highly effective units.
STAR OF THE GAME: Kenneth Faried had a couple of highlight dunks and was an absolute monster on the glass last night for the Nuggets, grabbing nine offensive rebounds and 16 total boards. In what ended up being a six point game and on a night when the Nuggets turned the ball over 21 times, the extra possessions that Faried created made a huge difference.
WINNING MOMENT: Thanks to all of Denver's turnovers, the Rockets were only down four with a minute left in this game despite James Harden having his worst game with the team. Houston got the stops they needed, but their offense couldn't deliver, and after Chandler Parsons missed a transition three that would have cut the lead to one with 15 seconds left, the rebound bounced hard off the rim, allowing Faried to not only chase it down, but to race to the ball and past the Rocket players for a wide open dunk to seal the game.
NUMBERS GAME: Jeremy Lin is shooting 36% from the field so far this season and he has only made seven of his 27 (26%) of his attempts away from the rim. Meanwhile, Omer Asik has only made 11 of his 28 attempts at the basket this season (39%).
TRENDING: In lieu of his inability to make shots at the rim, Asik remains a one of the league's top rebounders. After four games, he has the second highest rebounding rate in basketball, grabbing 22.6% of available rebounds (Anderson Varejao ranks #1 with a 25.1% rebound rate).
RECORD: 2-2, t-4th in the Southwest Division (t-9th in the West)
GAME RECAP: Denver did not play particularly well in this game, compiling a massive turnover rate and getting some volume scoring from their better players. Regardless, having Andre Iguodala to throw at James Harden made all of the difference in this one. Harden never got into a rhythm, turning the ball over six times while scoring a season low 15 points (on 15 shots). This is the second game out of three straight that Harden has faced an athletic perimeter defender that would be assigned to him (Nic Batum was first and Tony Allen is next) and the returns weren't great. Facing off against the opposition's top perimeter defender will be the toughest thing for Harden to adjust to this season and we saw a prime example of that last night. And if you can take Harden out of his game, Houston turns into a very beatable team.
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MMA News
Lyoto Machida: "Title shot should be on the line" | UFC NEWS
On today's UFC 157 conference call, Lyoto "The Dragon" Machida sounded off on the implications of his upcoming bout with Dan Henderson.
Machida, who is coming off a win over Ryan Bader at UFC on Fox 4 in August, said the winner of UFC 157's co-main event deserves a crack at Jon Jones. For the "Dragon", this would mean facing Jones in a rematch after having been put asleep by the champion via guillotine choke at UFC 140 in December.
"I believe, out of this fight, whoever wins should definitely be the contender for the title," Machida said. "If we're number one and number two then the title shot should definitely be on the line for this fight."
Henderson was scheduled to fight Jones for September's UFC 151main event, but the event was canceled due to an injury to Henderson, and in turn Jones' refusal to switch opponents on short notice. Henderson, who rides a four fight win streak is coming off an even longer layoff, last fighting over one year ago at UFC 139 when he defeated Mauricio "Shogun" Rua in an epic five round main event decision.
The two decorated light heavyweights will duke it out on February 23rd at the Honda Center in Anaheim, setting the stage for the UFC's first female bout between bantamweight champion, Ronda Rousey, and contender Liz Carmouche.
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15 Responses to "Lyoto Machida: "Title shot should be on the line" | UFC NEWS"
It won't be. Gray Maynard will call Dana & say he wants a crack at jones & Dana will set up the super fight.
Jones & Maynard a super fight? What are you smokin? Maynard can't even handle Edgar…
i think hes exaggerating
its called a joke guy… SMH
got a feeling lyoto machida knocks dan henderson out & retires him.. hope dan henderson wins though, want to see him fight jon jones before he goes to heavyweight.
No chance. Hendo doesnt know how to get knocked out. Machida might win a decision but if shogun can ko machida then no doubt hendo can. Should be a good fight but if machida wins it will be decision or submission and hendo by ko or decision. Too bad dana will find another way to screw hendo out of a title shot if he wins. Would much rather see hendo get a crack at jones then machida again
Umm Hendo had a shot but he got injured… Then it was supposed to be who had the more devastating win and clearly it was when Machida ko'd Bader… Both Machida and Hendo are in line for a shot that's why they are fighting
actually i believe that gustaffson (however you spell his name) IF he wins his next match is in line next, these two dont matter as of right now. i believe that the next fight for the belt should be whoever wins between these two also! i like gustaffson but i really dont believe he is ready yet especially if its against jones.
I thought it would be for the title shot, no? If you can fight for one weight class and get a title shot for another weight class, then these two should get that next slot.
Looks like A. Gus gets the next crack at JBJ if he gets past Gegard, which I give a 50% chance of that happening. Mousasi's the real deal and should NOT be over looked.
I love this mousasi is the man! … Right? R we talking pre or post jardine fight? regard is like lombard a legitimately guy, but ALL fighters have a peak he spent his fighting clowns w/ 'names' he will be a solid guy but he will stay @ the line between A&B list guys like a kongo , bader, he'll maybe he's even like basping a definite a list guy that always chokes in the #1 contender fights
Now that Gegard's actually training for fights, I think he's just starting to peak.. wait and see.
What is machida complaining about? If he wanted the title shot, he should of taken it when it was offered to him.
HAHA… rude
Machida was on his way to Brazil and got the call after he landed.. Then he would have had to get back on the plane and head back to the states.. And said he would have done it if he would get paid more cause he would have no time to even prepare for the fight.. And which he has everything to lose, if he lost again.. Of course Vitor and Sonnen will take the fight they, were middleweights.. What do they have to lose? Nothing and everything to gain! It was smart for machida cause he is a top contender and im not even a fan of his..
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ST. ANN, MO (KTVI) – Northwest Plaza is coming down. Construction on a new development is ramping up. The former Sears Automotive is scheduled to be the first to come down.
80 percent of the old mall is coming down to make room for a $106 million redevelopment. $33 million of that is reportedly coming form Tax Increment Financing. When the project is done, the city of St. Ann and developers are looking forward to new big-box stores, restaurants and a renovated JC Penney and Macy's.
The groundbreaking starts at 10 a.m. Tuesday morning on St. Charles Rock Road near Lindbergh at the Sears Auto Center.


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GW's Andy Aledort helps you unlock the guitar mysteries of Delta blues great Robert Johnson.
Andy Aledort shows you how to play a renowned live version of Hendrix's "Little Wing."
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The former Guns N' Roses guitarist shows you how to play key riffs from "Paradise City."
Watch John 5 break down his 'Ode to Django' column, which originally appeared in Guitar World June 2011.
AC Alexander offers up this month's six-string challenge.
Ty Tabor shows you how to play King's X classics like "Lost In Germany," "Dogman," "Goldlox," and "It's Love."
Andy Aledort shows you the essential techniques for playing grunge.
Metal Mike Chlasciak shows you 10 licks that any metal guitarist should have in their bag of tricks.
Anthony Armstrong of the band Red shows you how to play two cuts from their 2011 album, 'Until We Have Faces.'
In this video lesson, learn how to play Paul McCartney's classic hit "Maybe I'm Amazed."
Jimmy Brown shows you how to play Mumford & Son's hit song "Little Lion Man."
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From 3.1 to 3.5: Version leap for Firefox?
Mozilla is considering changing the version number of the expected Firefox 3.1 to Firefox 3.5. This, according to developers, will emphasize the sheer volume of work and vast changes already undertaken in version 3.1.
The leap in version number, suggested at a Firefox/Gecko meeting on Wednesday, will not mean users having to wait another two years for the next ready-to-run Firefox release. Rather, the aim of the developers is to underline the amount of work and the number of changes in the finished version 3.1, (named Shiretoko, after a Japanese national park), including the implementation of TraceMonkey and support for video codecs Ogg/Theora and Dirac.
"The increase in version number is proposed due to the sheer volume of work which makes Shiretoko feel like much more than a small, incremental improvement over Firefox 3..." say the developers. Should the suggestion be accepted, the next Firefox will keep the version number 3.1 Beta 3, and Firefox 3.5 Beta 4 would follow. This will also result in changes in the Firefox repository, with trunk being renumbered 3.6a1.
Issue 178/2015
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Qemu Flaw Lets the Guest Escape
Xen project announces a privilege escalation problem for Qemu host systems
Android Bug Threatens Millions of Users
Attackers can compromise an Android phone just by sending a text message
Lenovo and Canonical Announce Laptop Deal
PC vendor will pre-install Ubuntu on portables in India.
Mozilla Firefox Blocks Flash
More embarrassment for Adobe's embattled multimedia tool
Security Problem in Firefox's NoScript Add-On
Mozilla's script blocker add-on could be putting malware sites on the whitelist.
RIP SSLv3
The Internet community officially banishes the notoriously unsafe Secure Sockets Layer protocol.
Mate 1.1 Arrives
Popular desktop environment continues the Gnome 2 legacy – with new support for the Gnome 3 toolkit.
US Government Requires HTTPS
The Obama White House has issued a memorandum telling all US government agencies they must use HTTPS for all websites and web communication.
Mozilla Signs Firefox Add-Ons
New program will dial up security for the Firefox browser.
Fedora 22 Arrives
Red Hat's community distro embraces the cloud.


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The tomb of King Sejong the Great (Yoengneung) is in Yeoju, about an hour away from Seoul by bus. We went last weekend and even though it was coming to the end of March, it was still cold – minus 2 and very windy. It even snowed for a bit on the way too. But while we were there the sun came out. It seems to be a popular place for school / church trips and there was a constant stream of people arriving – families, adjummas, groups of kids. And as we were leaving, a huge (and I mean HUGE) party of children and adults with megaphones arrived. But we were on our way out by then. Good timing.
The tomb is up on a hill surrounded by pine trees following geomantic rules Continue reading "Tomb of King Sejong the Great in Yeoju" »


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UHS to begin early college program
The computer lab at Eastern New Mexico University-Roswell will be a place for University High School early college students to study and do homework in between classes or on days off. (Dylanne Petros Photo)
Students will have the chance to get a head start on their college education this year with the Eastern New Mexico University Early College Program.
The program allows students to start earning college credit, along with their high school credit, at the beginning of their high school career.
"The concept is…to complete their…four years of high school with an associate's (degree) and a high school diploma all at the same time," said Porter Cotrell, University High School principal.
The program has been in the works for a year now and gives the students the opportunity to be in a college environment, as the program will be held at University High School and Eastern New Mexico University-Roswell.
"We're really excited about this early college high school model. It has career pathways that lead to jobs within our community that are those high-paying jobs," said Roswell Independent School District Superintendent Tom Burris.
For the first two years, students will attend UHS where they will be taught by adjunct professors. The professors are UHS teachers who have been certified as adjunct professors.
"The great thing about that is (teachers are) able to weave the Login to read more
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Chris CK Kröll, Simon Schweiger and Loui Purucker are Kung-Fu Fighting through japanese powder and urban jungle. After a big snowfall the conditions in Niseko were insane! Enjoy this highlight straight from the road! Here is number two of the podcast trilogy from the japan team trip.
Since Völkl's conception, more than 90 years ago, our goal has remained the same: to build outstanding products, with unbeatable riding characteristics. Our motivation is happy shredder! It's their ultimate ride that we live and work for. But what really sets us apart from the competition is our in-house research and development department. They try, test and incorporate new high-tech materials into our products, which other brands haven't even heard of. In so doing we forever better the performance of our gear, staying one step ahead of the progression of snowboarding. If technology is the brain of Völkl Snowboards, our team riders are its heart. They are out there every day, putting our boards to the test in the most extreme conditions. As a result, only technology that has proved its worth in powder, pipe or park, is incorporated into our line, so more happy customers. As long as the snow keeps falling our aims won't change for the next 90 years… ever improving, more tech products that make your snowboard experience better. For more information go to www.volkl-snowboards.com


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Allegra online pharmacy
Allegra 24, 1989, Bellingham, Seattle, Washington, sailboat for sale from Sailing TexasHull, deck, and all structural bulkheads were professionally built by Scandia Custom Yacht Builders in 1989. The Roo has a custom layup. Although the original specs were more than adequate to meet Lloyd's specs for offshore use, this boat was built with additional layups measuring a full 3/8" on the shear, 5/8" on the turn, and 3/4" on the keel. She was built with modified epoxy resins and Cofab making her one of the strongest boats of this size ever built and almost impervious to osmosis. Friendster - Allegra Site Hawk Allegra's Comments and TestimonialsCopyright © 2010 Allegra Online Pharmacy. Buying Allegra Without Prescription.Good Old Boat Newsletter: October 2006Try to remember those days of September We recommend a broadband Internet connection to download, since it is such a large file. to be featured in SailNet newsletters and as the original publishers of some feature articles on the SailNet homepage. This is a partnership we re proud to be a part of.It began when I called a catalog retailer to order a couple of pair of socks made of that warm fleece material. I intended to wear them on early spring and late fall cruises. Transaction nearly completed, they asked it I d like to hear the week s specials. It s the McDonald s approach of upselling: Want fries with that? They even do this at the post office: Do you need stamps today? This book is divided into several sections.


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iMac G3 noob.
hi all. have just bought a imac g3 of ebay. was cheap at £21. it works and everything but it is a bit slow. it is currently running mac os 9. 30gb hard drive. 256mb ram. :D
See i bought a new(used) hard drive for it. just a 120gb one cause i know that the max is 128gb. well it was already formatted. and i know now that i need to partition it. but i am not sure how? i mean it is already formatted.
Any help on how i can partition it would be of much help!
Kind Regards
Welcome to Mac-Forums
You can install the HD to the computer then boot the imac into the OSX disc. Then open disk utility and it gives you all the options for formatting, partitioning etc.
- Simon
There really is no need to partition unless you just want to, or you're planning on installing more than one OS.
Just install and go...
You say it is already formatted? With what? If this is a new drive, probably FAT32 or NTFS for Windows.
You may need to reformat it to HFS to install OS 9.
What OS are going to install. If its never had OSX on the machine and you install a clean HD you may run into firmware issues. The boot rom has to be 4.19 before you install OSX.
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Destruction Derby and Siphon Filter? These are the games we really want to play...
The Sony Ericsson Xperia Play has been in our smartphone lives for just a brief time, promising to deliver a true mobile gaming experience with the odd text message, tweet and phone call thrown in for good measure.
With 60 games available at launch, we were suprised to hear that just six titles would come from the original PlayStation back catalogue. The good news is that E3 2011 will see the launch of new Xperia Play games.
Yanking mobile gamers away from their iPhones and Android handsets could prove a tall order for Sony Ericsson, but if they are going to make the PSP/phone mash-up a homage to PS One gaming, we've selected five games from the original PlayStation console that we think will instantly make the Xperia Play more desirable.
See below for PlayStation One games we want on the Xperia Play
1/Resident Evil 2 (1998)
Who says sequels are always a disappointment? RE2 went against the gaming grain by delivering possibly the best game in the series. Graphically RE2 came on leaps and bounds from the original, and with the overall depth of the gameplay enhanced, it is one game that we'd love to see get the Xperia Play treatment.
MORE Resident Evil: The whole bloody legacy
2/Metal Gear Solid (1998)
Remember Psycho Mantis reading your memory card? Hiding inside cardboard boxes to avoid being spotted by the guards? Solid Snake's first outing was iconic for the PlayStation One for so many reasons. We'd even make time for those long cinematic-style cut scenes...
3/Parappa the Rapper(1998)
"Kick, punch, it's all in the mind." If not just to have the opportunity hear the magnificent Chop Chop Master Onion spit his mad lyrics again, who could really pass up the opportunity to kick, punch, chop and throw in the odd freestyle move all in the pursuit of coolness?
4/Gran Turismo
It's safe to say that GT revolutionised the virtual driving gaming genre, earning your right to get behind some of the sleekest rides in the business. We may have waited what seemed like an eternity for GT5, but we imagine a port of the originial GT should prove a much speedier affair.
MORE 20 Games that changed it all
5/Tomb Raider (1996)
Way before Angelina Jolie brought the tiny short-wearing, cliff-leaping Lara Croft to life on the big screen, teenagers and the odd adult or two were locked in their rooms with the very first Tomb Raider title. Large environments to explore, a bit of puzzle-solving and a dual gun toting-heroine are all good reasons why Lara should get the Xperia Play treatment.


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Finally, a kit to make home brewed sake using real koji mold spores. Each kit makes 22 liters (about 5 gallons) of fine grade sake with an alcohol content of 14- 18%. This kit has carefully packaged freeze dried koji mold spores and basic directions for brewing your own Sake. In addition to the koji provided with the kit, ingredients necessary to make a 2.5 gallon batch of Sake are 4.2 pounds of medium grain rice, wine yeast, and 5 grams of citric acid.
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Sake Kit with Koji -
Complete Sake Ingredient Package with Rice & Yeast -
Organic Sushi Grade Rice, 4.2 Lb. Package -
Organic Sushi Grade Rice, bulk per lb. -


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Deal Might Be The Key To Save Detroit
By editor
The city's leaders agreed to a compromise with state officials this week, that may save Detroit from bankruptcy. But Detroit Free Press columnist Rochelle Riley tells host Michel Martin that a lot more work needs to be done to save the struggling city. They're also joined by NPR Senior Business Editor Marilyn Geewax.


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This little one will love this super fun, bright Moshi Monsters Moshlings stylus pack which features one of the popular Moshling characters: Jeepers.
Each pack contains a character stylus along with a matching game card case and a screen wipe. The Moshi Monsters Moshlings stylus pack is compatible with any 3DS, DSi or XL consoles.
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Gender Discrepancies Can Be Narrowed
Israeli researchers find the female brain can be modified to bridge gender gaps.
By: Bev Spritzer
According to Dr. David Tzuriel, professor of psychology and education at Israel's Bar-Ilan University , the gap in gender-specific brain functions can be narrowed through educational intervention.
Israeli researchers have found that males are better than females when it comes to spatial capabilities. "Boys are better than girls in spatial abilities and especially in the domain of mental rotation, the ability to rotate some visual aspect in your mind and visualize how it will look when rotated," said Tzuriel.
"Mental rotation has been found to be related to many skills in which males perform better than females," he continued. "That's why there are so many males in exact sciences like architecture, physics and chemistry, theoretically because they require these spatial abilities."
According to researchers, differences in the brains of boys and girls become evident from infancy.
Tzuriel and doctoral student Gila Egozi learned from preliminary findings that females apparently find it more difficult to gain control over spatial tasks, especially those involving mental rotation.
According to Tzuriel and Egozi, girls are genetically programmed to apprehend details in what Tzuriel refers to as a "local" way, while males have a more "global" perspective. This may contribute to the controversial perception that males are better drivers.
"But that doesn't mean it's not possible for females to develop their skills and become equal to males in a particular domain," Tzuriel told Israel 21c. "What is needed is a way to look at information in a holistic way rather than details. That makes it easier to control the data and manipulate the visual stimuli."
But that which is considered genetic, according to studies, can, in fact, be modified.
The researchers ran an interventional study on more than 100 randomly selected Israeli first-grade boys and girls to arrive at this end.
"When tested before and after, we found that the girls in the experimental group who had started at a lower level had closed the gap afterwards," explained Tzuriel. "At the end of the program they performed as well as the boys, meaning they made more progress than the boys did."
While the research doesn't yet prove that the training leads to better achievement in science, math and engineering for girls, according to Tzuriel, it is a promising first step - at least in the face of gender-related stereotypes.
Tzuriel is the editor of the Journal of Cognitive Education and Psychology, and is a professor at Bar-Ilan, where he used to chair the School of Education.
He is regarded as a world leader in the field of dynamic assessment of learning potential, used widely in England, Italy, the Netherlands, Belgium and North America.


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so i decided to put it onto DFU mode and have it restore to its factory settings, so i set it onto DFU mode and waited like an hour for the software update to download, and when it finished, it restored perfectly fine, but when it was done, it didnt reboot, so i made sure my computer wasnt doing anything, and unplugged it without any problem and i had it reboot.
after that, it looks perfectly allright, you see the shiny silver apple logo in the middle, until the screen goes white for a fraction of a second and reboots. Why is this happening?
and now i cant shut it down, so i straighly put it onto dfu mode and it shows the ipod cable to itunes thing and itunes says its on recovery mode. :U i cant do anything. i restored it 3 times now. and it still wont boot up.
right now im downloading the 2.2.1 firmware for the ipod thinking that it only is an update error :/
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Member Since: Oct 03, 2009
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This probably explains why it isn't functioning properly. What in the heck is DFU?
The only thing that I can think of: plug it into iTunes, do a Restore.
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Struck By Lighting's Roberto Aguire on Working With Rebel Wilson and Chris Colfer — Exclusive
Switzerland-raised actor Roberto Aguire makes his big screen debut in this January's Struck By Lightning, a dark comedy that both stars and was written by Glee's Chris Colfer's (Kurt).
In his dual roles as both an actor and a producer on the film, Roberto got the chance to work with Chris on a daily basis. So what is it like to spend time with the infamously overachieving 22-year-old author/scriptwriter/TV and movie star? Roberto spoke exclusively with Wetpaint Entertainment about working with Chris — and his hilarious co-star Rebel Wilson.
Plus, are Chris and his Glee character, Kurt, anything alike in real life? Take a look at what Roberto had to say.
Author. Screenwriter. Movie star. Chris seems like he's always hard at work on one project or another. What's it like to be in the same room as him?
I think the first thing that you're kind of shocked by is how down to earth he is. You'd expect him to have his mind completely elsewhere, and you'd expect him to not really be able to pay attention to you, but when you're in a room with him, his whole focus is on you and he's so quick-witted.
I mean, he's just pulling out things left and right that have you laughing. And then he's able to switch, and suddenly he's coming up with these super-creative ideas. He's just this huge conglomerate of talent and wit and humor and everything. Everything that people think he is, he's that and more. That's honestly what he's like.
Is he similar to Kurt on Glee at all?
No, I don't think he is, honestly. I think there's parts of him that he's been able to draw from for Kurt, and to play that character. But he's very different, actually, in person. Just the way he is in life, he is pretty different.
You got to work with so many other cool people, too. Like Rebel Wilson?
Yeah. Oh my god. [laughs] She was someone that I don't think any of us were ready for. She got cast the day before she started filming, and she came in and like a powerhouse. She's one of the most amazing improvisational actresses that I've ever seen work. She's pulling out these ad libbed lines that have the entire crew rolling on the floor with laughter.
We had to stop takes because people can't stop laughing. It's so hard to act opposite her, because she's taking your lines and making them hilarious, and you're like How can I even have a scene where I'm supposed to be blackmailed by this girl who has me laughing? She honestly is beyond-belief talented.
Honestly, you meet her and she just goes and goes and goes. She has this whole cool kind of gangster side where she pretends to rap, but actually she can rap, and then she can use nunchucks and she's so hip. You're like, Where'd you come from?
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