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High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
1. A semiconductor structure comprising:
a monocrystalline silicon substrate;
an amorphous oxide material in contact with the monocrystalline silicon substrate;
a monocrvstalline metal oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material; and
a monocrystalline compound semiconductor material overlying the monocrystalline metal oxide.
2. The semiconductor structure of
3. The semiconductor structure of
4. The semiconductor structure of
5. The semiconductor structure of
6. The semiconductor structure of
7. The semiconductor structure of
8. The semiconductor structure of
9. The semiconductor structure of
This application is a Divisional of application Ser. No. 10/076,450, filed Feb. 19, 2002 now abandoned, which is a Divisional of application Ser. No. 09/502,023, filed Feb. 10, 2000 now U.S. Pat. No. 6,392,257.
This invention relates generally to semiconductor structures and devices and to a method for their fabrication, and more specifically to compound semiconductor structures and devices and to the fabrication and use of semiconductor structures, devices, and integrated circuits that include a monocrystalline compound semiconductor material.
The vast majority of semiconductor discrete devices and integrated circuits are fabricated from silicon, at least in part because of the availability of inexpensive, high quality monocrystalline silicon substrates. Other semiconductor materials, such as the so called compound semiconductor materials, have physical attributes, including wider bandgap and/or higher mobility than silicon, or direct bandgaps that makes these materials advantageous for certain types of semiconductor devices. Unfortunately, compound semiconductor materials are generally much more expensive than silicon and are not available in large wafers as is silicon. Gallium arsenide (GaAs), the most readily available compound semiconductor material, is available in wafers only up to about 150 millimeters (mm) in diameter. In contrast, silicon wafers are available up to about 300 mm and are widely available at 200 mm. The 150 mm GaAs wafers are many times more expensive than are their silicon counterparts. Wafers of other compound semiconductor materials are even less available and are more expensive than GaAs.
Because of the desirable characteristics of compound semiconductor materials, and because of their present generally high cost and low availability in bulk form, for many years attempts have been made to grow thin films of the compound semiconductor materials on a foreign substrate. To achieve optimal characteristics of the compound semiconductor material, however, a monocrystalline film of high crystalline quality is desired. Attempts have been made, for example, to grow layers of a monocrystalline compound semiconductor material on germanium, silicon, and various insulators. These attempts have generally been unsuccessful because lattice mismatches between the host crystal and the grown crystal have caused the resulting thin film of compound semiconductor material to be of low crystalline quality.
If a large area thin film of high quality monocrystalline compound semiconductor material was available at low cost, a variety of semiconductor devices could advantageously be fabricated in that film at a low cost compared to the cost of fabricating such devices on a bulk wafer of compound semiconductor material or in an epitaxial film of such material on a bulk wafer of compound semiconductor material. In addition, if a thin film of high quality monocrystalline compound semiconductor material could be realized on a bulk wafer such as a silicon wafer, an integrated device structure could be achieved that took advantage of the best properties of both the silicon and the compound semiconductor material.
Accordingly, a need exists for a semiconductor structure that provides a high quality monocrystalline compound semiconductor film over another monocrystalline material and for a process for making such a structure.
The present invention is illustrated by way of example and not limitation in the accompanying figures, in which like references indicate similar elements, and in which:
Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of embodiments of the present invention.
In accordance with one embodiment of the invention, structure 20 also includes an amorphous intermediate layer 28 positioned between substrate 22 and accommodating buffer layer 24. Structure 20 may also include a template layer 30 between the accommodating buffer layer and compound semiconductor layer 26. As will be explained more fully below, the template layer helps to initiate the growth of the compound semiconductor layer on the accommodating buffer layer. The amorphous intermediate layer helps to relieve the strain in the accommodating buffer layer and by doing so, aids in the growth of a high crystalline quality accommodating buffer layer.
Substrate 22, in accordance with an embodiment of the invention, is a monocrystalline semiconductor wafer, preferably of large diameter. The wafer can be of a material from Group IV of the periodic table, and preferably a material from Group IVA. Examples of Group IV semiconductor materials include silicon, germanium, mixed silicon and germanium, mixed silicon and carbon, mixed silicon, germanium and carbon, and the like. Preferably substrate 22 is a wafer containing silicon or germanium, and most preferably is a high quality monocrystalline silicon wafer as used in the semiconductor industry. Accommodating buffer layer 24 is preferably a monocrystalline oxide or nitride material epitaxially grown on the underlying substrate. In accordance with one embodiment of the invention, amorphous intermediate layer 28 is grown on substrate 22 at the interface between substrate 22 and the growing accommodating buffer layer by the oxidation of substrate 22 during the growth of layer 24. The amorphous intermediate layer serves to relieve strain that might otherwise occur in the monocrystalline accommodating buffer layer as a result of differences in the lattice constants of the substrate and the buffer layer. As used herein, lattice constants refers to the distance between atoms of a cell measured in the plane of the surface. If such strain is not relieved by the amorphous intermediate layer, the strain may cause defects in the crystalline structure of the accommodating buffer layer. Defects in the crystalline structure of the accommodating buffer layer, in turn, would make it difficult to achieve a high quality crystalline structure in monocrystalline compound semiconductor layer 26.
Accommodating buffer layer 24 is preferably a monocrystalline oxide or nitride material selected for its crystalline compatibility with the underlying substrate and with the overlying compound semiconductor material. For example, the material could be an oxide or nitride having a lattice structure matched to the substrate and to the subsequently applied semiconductor material. Materials that are suitable for the accommodating buffer layer include metal oxides such as the alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide. Additionally, various nitrides such as gallium nitride, aluminum nitride, and boron nitride may also be used for the accommodating buffer layer. Most of these materials are insulators, although strontium ruthenate, for example, is a conductor. Generally, these materials are metal oxides or metal nitrides, and more particularly, these metal oxide or nitrides typically include at least two different metallic elements. In some specific applications, the metal oxides or nitride may include three or more different metallic elements.
Amorphous interface layer 28 is preferably an oxide formed by the oxidation of the surface of substrate 22, and more preferably is composed of a silicon oxide. The thickness of layer 28 is sufficient to relieve strain attributed to mismatches between the lattice constants of substrate 22 and accommodating buffer layer 24. Typically, layer 28 has a thickness in the range of approximately 0.5–5 nm.
The compound semiconductor material of layer 26 can be selected, as needed for a particular semiconductor structure, from any of the Group IIIA and VA elements (III–V semiconductor compounds), mixed III–V compounds, Group II(A or B) and VIA elements (II–VI semiconductor compounds), and mixed II–VI compounds. Examples include gallium arsenide (GaAs), gallium indium arsenide (GaInAs), gallium aluminum arsenide (GaAlAs), indium phosphide (InP), cadmium sulfide (CdS), cadmium mercury telluride (CdHgTe), zinc selenide (ZnSe), zinc sulfur selenide (ZnSSe), and the like. Suitable template materials chemically bond to the surface of the accommodating buffer layer 24 at selected sites and provide sites for the nucleation of the epitaxial growth of the subsequent compound semiconductor layer 26. Appropriate materials for template 30 are discussed below.
The following non-limiting, illustrative examples illustrate various combinations of materials useful in structure 20 and structure 40 in accordance with various alternative embodiments of the invention. These examples are merely illustrative, and it is not intended that the invention be limited to these illustrative examples.
In accordance with one embodiment of the invention, monocrystalline substrate 22 is a silicon substrate oriented in the (100) direction. The silicon substrate can be, for example, a silicon substrate as is commonly used in making complementary metal oxide semiconductor (CMOS) integrated circuits having a diameter of about 200–300 mm. In accordance with this embodiment of the invention, accommodating buffer layer 24 is a monocrystalline layer of SrzBa1−zTiO3 where z ranges from 0 to 1 and the amorphous intermediate layer is a layer of silicon oxide (SiOx) formed at the interface between the silicon substrate and the accommodating buffer layer. The value of z is selected to obtain one or more lattice constants closely matched to corresponding lattice constants of the subsequently formed layer 26. The accommodating buffer layer can have a thickness of about 2 to about 100 nanometers (nm) and preferably has a thickness of about 10 nm. In general, it is desired to have an accommodating buffer layer thick enough to isolate the compound semiconductor layer from the substrate to obtain the desired electrical and optical properties. Layers thicker than 100 nm usually provide little additional benefit while increasing cost unnecessarily; however, thicker layers may be fabricated if needed. The amorphous intermediate layer of silicon oxide can have a thickness of about 0.5–5 nm, and preferably a thickness of about 1.5–2.5 nm.
In accordance with this embodiment of the invention, compound semiconductor material layer 26 is a layer of gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs) having a thickness of about 1 nm to about 100 micrometers (μm) and preferably a thickness of about 0.5 μm to 10 μm. The thickness generally depends on the application for which the layer is being prepared. To facilitate the epitaxial growth of the gallium arsenide or aluminum gallium arsenide on the monocrystalline oxide, a template layer is formed by capping the oxide layer. The template layer is preferably 1–10 monolayers of Ti—As, Sr—O—As, Sr—Ga—O, or Sr—Al—O. By way of a preferred example, 1–2 monolayers of Ti—As or Sr—Ga—O have been shown to successfully grow GaAs layers.
In accordance with a further embodiment of the invention, monocrystalline substrate 22 is a silicon substrate as described above. The accommodating buffer layer is a monocrystalline oxide of strontium or barium zirconate or hafnate in a cubic or orthorhombic phase with an amorphous intermediate layer of silicon oxide formed at the interface between the silicon substrate and the accommodating buffer layer. The accommodating buffer layer can have a thickness of about 2–100 nm and preferably has a thickness of at least 5 nm to ensure adequate crystalline and surface quality and is formed of a monocrystalline SrZrO3, BaZrO3, SrHfO3, BaSnO3 or BaHfO3. For example, a monocrystalline oxide layer of BaZrO3 can grow at a temperature of about 700 degrees C. The lattice structure of the resulting crystalline oxide exhibits a 45 degree rotation with respect to the substrate silicon lattice structure.
An accommodating buffer layer formed of these zirconate or hafnate materials is suitable for the growth of compound semiconductor materials in the indium phosphide (InP) system. The compound semiconductor material can be, for example, indium phosphide (InP) or indium gallium arsenide (InGaAs) having a thickness of about 1.0 nm to 10 μm. A suitable template for this structure is 1–10 monolayers of zirconium-arsenic (Zr—As), zirconium-phosphorus (Zr—P), hafnium-arsenic (Hf—As), hafnium-phosphorus (Hf—P), strontium-oxygen-arsenic (Sr—O—As), strontium-oxygen-phosphorus (Sr—O—P), barium-oxygen-arsenic (Ba—O—As), indium-strontium-oxygen (In—Sr—O), or barium-oxygen-phosphorus (Ba—O—P), and preferably 1–2 monolayers of one of these materials. By way of an example, for a barium zirconate accommodating buffer layer, the surface is terminated with 1–2 monolayers of zirconium followed by deposition of 1–2 monolayers of arsenic to form a Zr—As template. A monocrystalline layer of the compound semiconductor material from the indium phosphide system is then grown on the template layer. The resulting lattice structure of the compound semiconductor material exhibits a 45 degree rotation with respect to the accommodating buffer layer lattice structure and a lattice mismatch to (100) InP of less than 2.5%, and preferably less than about 1.0%.
In accordance with a further embodiment of the invention, a structure is provided that is suitable for the growth of an epitaxial film of a II–VI material overlying a silicon substrate. The substrate is preferably a silicon wafer as described above. A suitable accommodating buffer layer material is SrxBa1−xTiO3, where x ranges from 0 to 1, having a thickness of about 2–100 nm and preferably a thickness of about 5–15 nm. The II-VI compound semiconductor material can be, for example, zinc selenide (ZnSe) or zinc sulfur selenide (ZnSSe). A suitable template for this material system includes 1–10 monolayers of zinc-oxygen (Zn—O) followed by 1–2 monolayers of an excess of zinc followed by the selenidation of zinc on the surface. Alternatively, a template can be, for example, strontium-sulfur (Sr—S) followed by the ZnSeS.
This embodiment of the invention is an example of structure 40 illustrated in
This example also illustrates materials useful in a structure 40 as illustrated in
Referring again to
In accordance with one embodiment of the invention, substrate 22 is a (100) or (111) oriented monocrystalline silicon wafer and accommodating buffer layer 24 is a layer of strontium barium titanate. Substantial matching of lattice constants between these two materials is achieved by rotating the crystal orientation of the titanate material by 45� with respect to the crystal orientation of the silicon substrate wafer. The inclusion in the structure of amorphous interface layer 24, a silicon oxide layer in this example, serves to reduce strain in the titanate monocrystalline layer that might result from any mismatch in the lattice constants of the host silicon wafer and the grown titanate layer. As a result, in accordance with an embodiment of the invention, a high quality, thick monocrystalline titanate layer is achievable.
Still referring to
The following example illustrates a process, in accordance with one embodiment of the invention, for fabricating a semiconductor structure such as the structures depicted in
In accordance with an alternate embodiment of the invention, the native silicon oxide can be converted and the substrate surface can be prepared for the growth of a monocrystalline oxide layer by depositing strontium oxide onto the substrate surface by MBE at a low temperature and by subsequently heating the structure to a temperature of about 750� C. At this temperature a solid state reaction takes place between the strontium oxide and the native silicon oxide causing the reduction of the native silicon oxide and leaving an ordered 2�1 structure with strontium, oxygen, and silicon remaining on the substrate surface. Again, this forms a template for the subsequent growth of an ordered monocrystalline oxide layer.
Following the removal of the silicon oxide from the surface of the substrate, in accordance with one embodiment of the invention, the substrate is cooled to a temperature in the range of about 400–600� C. and a layer of strontium titanate is grown on the template layer by molecular beam epitaxy. The MBE process is initiated by opening shutters in the MBE apparatus to expose strontium, titanium and oxygen sources. The ratio of strontium and titanium is approximately 1:1. The partial pressure of oxygen is initially set at a minimum value to grow stochiometric strontium titanate at a growth rate of about 0.3–0.5 nm per minute. After initiating growth of the strontium titanate, the partial pressure of oxygen is increased above the initial minimum value. The overpressure of oxygen causes the growth of an amorphous silicon oxide layer at the interface between the underlying substrate and the growing strontium titanate layer. The growth of the silicon oxide layer results from the diffusion of oxygen through the growing strontium titanate layer to the interface where the oxygen reacts with silicon at the surface of the underlying substrate. The strontium titanate grows as an ordered monocrystal with the crystalline orientation rotated by 45� with respect to the ordered 2�1 crystalline structure of the underlying substrate. Strain that otherwise might exist in the strontium titanate layer because of the small mismatch in lattice constant between the silicon substrate and the growing crystal is relieved in the amorphous silicon oxide intermediate layer.
After the strontium titanate layer has been grown to the desired thickness, the monocrystalline strontium titanate is capped by a template layer that is conducive to the subsequent growth of an epitaxial layer of a desired compound semiconductor material. For the subsequent growth of a layer of gallium arsenide, the MBE growth of the strontium titanate monocrystalline layer can be capped by terminating the growth with 1–2 monolayers of titanium, 1–2 monolayers of titanium-oxygen or with 1–2 monolayers of strontium-oxygen. Following the formation of this capping layer, arsenic is deposited to form a Ti—As bond, a Ti—O—As bond or a Sr—O—As. Any of these form an appropriate template for deposition and formation of a gallium arsenide monocrystalline layer. Following the formation of the template, gallium is introduced to the reaction with the arsenic and gallium arsenide forms. Alternatively, gallium can be deposited on the capping layer to form a Sr—O—Ga bond, and arsenic is introduced with the gallium to form the GaAs.
The structure illustrated in
The process described above illustrates a process for forming a semiconductor structure including a silicon substrate, a monocrystalline strontium titanate accommodating buffer layer, and a monocrystalline gallium arsenide compound semiconductor layer by the process of molecular beam epitaxy. The process can also be carried out by the process of chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), migration enhanced epitaxy (MEE), atomic layer epitaxy (ALE), or the like. Further, by a similar process, other monocrystalline accommodating buffer layers such as alkaline earth metal titanates, zirconates, hafnates, tantalates, vanadates, ruthenates, and niobates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide can also be grown. Further, by a similar process such as MBE, other III-V and II-VI monocrystalline compound semiconductor layers can be deposited overlying the monocrystalline oxide accommodating buffer layer.
Each of the variations of compound semiconductor materials and monocrystalline oxide accommodating buffer layer uses an appropriate template for initiating the grown of the compound semiconductor layer. For example, if the accommodating buffer layer is alkaline earth metal zirconate, the oxide can be capped by a thin layer of zirconium. The deposition of zirconium can be followed by the deposition of arsenic or phosphorus to react with the zirconium as a precursor to depositing indium gallium arsenide, indium aluminum arsenide, or indium phosphide respectively. Similarly, if the monocrystalline oxide accommodating buffer layer is an alkaline earth metal hafnate, the oxide layer can be capped by a thin layer of hafnium. The deposition of hafnium is followed by the deposition of arsenic or phosphorous to react with the hafnium as a precursor to the growth of an indium gallium arsenide, indium aluminum arsenide, or indium phosphide layer, respectively. In a similar manner, strontium titanate can be capped with a layer of strontium or strontium and oxygen and barium titanate can be capped with a layer of barium or barium and oxygen. Each of these depositions can be followed by the deposition of arsenic or phosphorus to react with the capping material to form a template for the deposition of a compound semiconductor material layer comprising indium gallium arsenide, indium aluminum arsenide, or indium phosphide.
Insulating material 58 and any other layers that may have been formed or deposited during the processing of semiconductor component 56 in region 53 are removed from the surface of region 54 to provide a bare silicon surface in that region. As is well known, bare silicon surfaces are highly reactive and a native silicon oxide layer can quickly form on the bare surface. A layer of barium or barium and oxygen is deposited onto the native oxide layer on the surface of region 54 and is reacted with the oxidized surface to form a first template layer (not shown). In accordance with one embodiment of the invention a monocrystalline oxide layer 60 is formed overlying the template layer by a process of molecular beam epitaxy. Reactants including barium, titanium and oxygen are deposited onto the template layer to form the monocrystalline oxide layer. Initially during the deposition the partial pressure of oxygen is kept near the minimum necessary to fully react with the barium and titanium to form monocrystalline barium titanate layer 60. The partial pressure of oxygen is then increased to provide an overpressure of oxygen and to allow oxygen to diffuse through the growing monocrystalline oxide layer. The oxygen diffusing through the barium titanate reacts with silicon at the surface of region 54 to form an amorphous layer 62 of silicon oxide on the second region and at the interface between the silicon substrate and the monocrystalline oxide.
In accordance with an embodiment of the invention, the step of depositing monocrystalline oxide layer 60 is terminated by depositing a second template layer 64, which can be 1–10 monolayers of titanium., barium, barium and oxygen, or titanium and oxygen. A layer 66 of a monocrystalline compound semiconductor material is then deposited overlying the second template layer by a process of molecular beam epitaxy. The deposition of layer 66 is initiated by depositing a layer of arsenic onto the template. This initial step is followed by depositing gallium and arsenic to form monocrystalline gallium arsenide. Alternatively, strontium can be substituted for barium in the above example.
In accordance with a further embodiment of the invention, a semiconductor component, generally indicated by a dashed line 68 is formed in compound semiconductor layer 66. Semiconductor component 68 can be formed by processing steps conventionally used in the fabrication of gallium arsenide or other III–V compound semiconductor material devices. Semiconductor component 68 can be any active or passive component, and preferably is a semiconductor laser, light emitting diode, photodetector, heterojunction bipolar transistor (HBT), high frequency MESFET, or other component that utilizes and takes advantage of the physical properties of compound semiconductor materials. A metallic conductor schematically indicated by the line 70 can be formed to electrically couple device 68 and device 56, thus implementing an integrated device that includes at least one component formed in the silicon substrate and one device formed in the monocrystalline compound semiconductor material layer. Although illustrative structure 50 has been described as a structure formed on a silicon substrate 52 and having a barium (or strontium) titanate layer 60 and a gallium arsenide layer 66, similar devices can be fabricated using other substrates, monocrystalline oxide layers and other compound semiconductor layers as described elsewhere in this disclosure.
A semiconductor component generally indicated by a dashed line 92 is formed at least partially in monocrystalline semiconductor layer 86. In accordance with one embodiment of the invention, semiconductor component 92 may include a field effect transistor having a gate dielectric formed, in part, by monocrystalline oxide layer 88. In addition, monocrystalline semiconductor layer 92 can be used to implement the gate electrode of that field effect transistor. In accordance with one embodiment of the invention, monocrystalline semiconductor layer 86 is formed from a group III-V compound and semiconductor component 92 is a radio frequency amplifier that takes advantage of the high mobility characteristic of group III–V component materials. In accordance with yet a further embodiment of the invention, an electrical interconnection schematically illustrated by the line 94 electrically interconnects component 78 and component 92. Structure 72 thus integrates components that take advantage of the unique properties of the two monocrystalline semiconductor materials.
By way of more specific examples, other integrated circuits and systems are illustrated in
An integrated circuit is generally a combination of at least two circuit elements (e.g., transistors, diodes, resistors, capacitors, and the like) inseparably associated on or within a continuous substrate. The integrated circuit 102 includes a compound semiconductor portion 1022, a bipolar portion 1024, and an MOS portion 1026. The compound semiconductor portion 1022 includes electrical components that are formed at least partially within a compound semiconductor material. Transistors and other electrical components within the compound semiconductor portion 1022 are capable of processing signals at radio frequencies of at least approximately 0.8 GHz. In other embodiments, the signals could be at lower or higher frequencies. For example, some materials, such as indium gallium arsenide, are capable of processing signals at radio frequency signals at approximately 27 GHz.
The compound semiconductor portion 1022 further includes a duplexer 10222, a radio frequency-to-baseband converter 10224 (demodulating means or demodulating circuit), baseband-to-radio frequency converter 10226 (modulating means or modulating circuit), a power amplifier 10228, and an isolator 10229. The bipolar portion 1024 and the MOS portion 1026 typically are formed in a Group IV semiconductive material. The bipolar portion 1024 includes a receiving amplifier 10242, an analog-to-digital converter 10244, a digital-to-analog converter 10246, and a transmitting amplifier 10248. The MOS portion 1026 includes a digital signal processing means 10262. An example of such means includes any one of the commonly available DSP cores available in the market, such as the Motorola DSP 566xx (from Motorola, Incorporated of Schaumburg, Ill.) and Texas Instruments TMS 320C54x (from Texas Instruments of Dallas, Tex.) families of digital signal processors. This digital signal processing means 10262 typically includes complementary MOS (CMOS) transistors and analog-to-digital and digital-to-analog converters. Clearly, other electrical components are present in the integrated circuit 102.
In one mode of operation, the communicating device 100 receives a signal from an antenna, which is part of the signal transceiving means 101. The signal passes through the duplexer 10227 to the radio frequency-to-baseband converter 10224. The analog data or other information is amplified by receiving amplifier 10224 and transmitted to the digital signal processing means 10262. After the digital signal processing means 10262 has processed the information or other data, the processed information or other data is transmitted to the output unit 103. If the communicating device is a pager, the output unit can be a display. If the communicating device is a cellular telephone, the output unit 103 can include a speaker, a display, or both.
Data or other information can be sent through the communicating device 100 in the opposite direction. The data or other information will come in through the input unit 104. In a cellular telephone, this could include a microphone or a keypad. The information or other data is then processed using the digital signal processing means 10262. After processing, the signal is then converted using the digital-to-analog converter 10246. The converted signal is amplified by the transmitting amplifier 10248. The amplified signal is modulated by the baseband-to-radio frequency converter 10226 and further amplified by power amplifier 10228. The amplified RF signal passes through the isolator 10229 and duplexer 10222 to the antenna.
Prior art embodiments of the communicating device 100 would have at least two separate integrated circuits: one for the compound semiconductor portion 1022 and one for the MOS portion 1026. The bipolar portion 1024 may be on the same integrated circuit as the MOS portion 1026 or could be on still another integrated circuit. With an embodiment of the present invention, all three portions can now be formed within a single integrated circuit. Because all of the transistors can reside on a single integrated circuit, the communicating device can be greatly miniaturized and allow for greater portability of a communicating device.
Attention is now directed to a method for forming exemplary portions of the integrated circuit 102 as illustrated in
A p-type dopant is introduced into the drift region 1117 to form an active or intrinsic base region 1114. An n-type, deep collector region 1108 is then formed within the bipolar portion 1024 to allow electrical connection to the buried region 1102. Selective n-type doping is performed to form N+ doped regions 1116 and the emitter region 1120. N+ doped regions 1116 are formed within layer 1104 along adjacent sides of the gate electrode 1112 and are source, drain, or source/drain regions for the MOS transistor. The N+ doped regions 1116 and emitter region 1120 have a doping concentration of at least 1E19 atoms per cubic centimeter to allow ohmic contacts to be formed. A p-type doped region is formed to create the inactive or extrinsic base region 1118 which is a P+ doped region (doping concentration of at least 1E19 atoms per cubic centimeter).
In the embodiment described, several processing steps have been performed but are not illustrated or further described, such as the formation of well regions, threshold adjusting implants, channel punchthrough prevention implants, field punchthrough prevention implants, as well as a variety of masking layers. The formation of the device up to this point in the process is performed using conventional steps. As illustrated, a standard N-channel MOS transistor has been formed within the MOS region 1026, and a vertical NPN bipolar transistor has been formed within the bipolar portion 1024. As of this point, no circuitry has been formed within the compound semiconductor portion 1022.
All of the layers that have been formed during the processing of the bipolar and MOS portions of the integrated circuit are now removed from the surface of compound semiconductor portion 1022. A bare silicon surface is thus provided for the subsequent processing of this portion, for example in the manner set forth above.
An accommodating buffer layer 124 is then formed over the substrate 110 as illustrated in
A monocrystalline compound semiconductor layer 132 is then epitaxially grown overlying the monocrystalline portion of accommodating buffer layer 124 as shown in
At this point in time, sections of the compound semiconductor layer 132 and the accommodating buffer layer 124 are removed from portions overlying the bipolar portion 1024 and the MOS portion 1026 as shown in
A transistor 144 is then formed within the monocrystalline compound semiconductor portion 1022. A gate electrode 148 is then formed on the monocrystalline compound semiconductor layer 132. Doped regions 146 are then formed within the monocrystalline compound semiconductor layer 132. In this embodiment, the transistor 144 is a metal-semiconductor field-effect transistor (MESFET). If the MESFET is an n-type MESFET, the doped regions 146 and monocrystalline compound semiconductor layer 132 are also n-type doped. If a p-type MESFET were to be formed, then the doped regions 146 and monocrystalline compound semiconductor layer 132 would have just the opposite doping type. The heavier doped (N) regions 146 allow ohmic contacts to be made to the monocrystalline compound semiconductor layer 132. At this point in time, the active devices within the integrated circuit have been formed. This particular embodiment includes an n-type MESFET, a vertical NPN bipolar transistor, and a planar n-channel MOS transistor. Many other types of transistors, including P-channel MOS transistors, p-type vertical bipolar transistors, p-type MESFETs, and combinations of vertical and planar transistors, can be used. Also, other electrical components, such as resistors, capacitors, diodes, and the like, may be formed in one or more of the portions 1022, 1024, and 1026.
Processing continues to form a substantially completed integrated circuit 102 as illustrated in
A passivation layer 156 is formed over the interconnects 1562, 1564, and 1566 and insulating layer 154. Other electrical connections are made to the transistors as illustrated as well as to other electrical or electronic components within the integrated circuit 102 but are not illustrated in the figures. Further, additional insulating layers and interconnects may be formed as necessary to form the proper interconnections between the various components within the integrated circuit 102.
As can be seen from the previous embodiment, active devices for both compound semiconductor and Group IV semiconductor materials can be integrated into a single integrated circuit. Because there is some difficulty in incorporating both bipolar transistors and MOS transistors within a same integrated circuit, it may be possible to move some of the components within bipolar portion into the compound semiconductor portion 1022 or the MOS portion 1024. More specifically, turning to the embodiment as described with respect to
In still another embodiment, an integrated circuit can be formed such that it includes an optical laser in a compound semiconductor portion and an optical interconnect (waveguide) to an MOS transistor within a Group IV semiconductor region of the same integrated circuit.
Another accommodating buffer layer 172, similar to the accommodating buffer layer 164, is formed over the upper mirror layer 170. In an alternative embodiment, the accommodating buffer layers 164 and 172 may include different materials. However, their function is essentially the same in that each is used for making a transition between a compound semiconductor layer and a monocrystalline Group IV semiconductor layer. A monocrystalline Group IV semiconductor layer 174 is formed over the accommodating buffer layer 172. In one particular embodiment, the monocrystalline Grout IV semiconductor layer 174 includes germanium, silicon germanium, silicon germanium carbide, or the like.
A monocrystalline Group IV semiconductor layer is epitaxially grown over one of the doped regions 177. An upper portion 184 is P+ doped, and a lower portion 182 remains substantially intrinsic (undoped) as illustrated in
The next set of steps is performed to define the optical laser 180 as illustrated in
Contacts 186 and 188 are formed for making electrical contact to the upper mirror layer 170 and the lower mirror layer 166, respectively, as shown in
An insulating layer 190 is then formed and patterned to define optical openings extending to the contact layer 186 and one of the doped regions 177 as shown in
The balance of the formation of the optical waveguide, which is an optical interconnect, is completed as illustrated in
Processing is continued to form a substantially completed integrated circuit as illustrated in
In other embodiments, other types of lasers can be formed. For example, another type of laser can emit light (photons) horizontally instead of vertically. If light is emitted horizontally, the MOSFET transistor could be formed within the substrate 161, and the optical waveguide would be reconfigured, so that the laser is properly coupled (optically connected) to the transistor. In one specific embodiment, the optical waveguide can include at least a portion of the accommodating buffer layer. Other configurations are possible.
Clearly, these embodiments of integrated circuits having compound semiconductor portions and Group IV semiconductor portions, are meant to illustrate embodiments of the present invention and not limit the present invention. There are multiplicity of other combinations and other embodiments of the present invention. For example, the compound semiconductor portion may include light emitting diodes, photodetectors, diodes, or the like, and the Group IV semiconductor can include digital logic, memory arrays, and most structures that can be formed in conventional MOS integrated circuits. By using embodiments of the present invention, it is now simpler to integrate devices that work better in compound semiconductor materials with other components that work better in Group IV semiconductor materials. This allows a device to be shrunk, the manufacturing costs to decrease, and yield and reliability to increase.
Although not illustrated, a monocrystalline Group IV wafer can be used in forming only compound semiconductor electrical components over the wafer. In this manner, the wafer is essentially a "handle" wafer used during the fabrication of the compound semiconductor electrical components within a monocrystalline compound semiconductor layer overlying the wafer. Therefore, electrical components can be formed within III–V or II–VI semiconductor materials over a wafer of at least approximately 200 millimeters in diameter and possibly at least approximately 300 millimeters.
By the use of this type of substrate, a relatively inexpensive "handle" wafer overcomes the fragile nature of the compound semiconductor wafers by placing them over a relatively more durable and easy to fabricate base material. Therefore, an integrated circuit can be formed such that all electrical components, and particularly all active electronic devices, can be formed within the compound semiconductor material even though the substrate itself may include a Group IV semiconductor material. Fabrication costs for compound semiconductor device should decrease because larger substrates can be processed more economically and more readily compared to the relatively smaller and more fragile, conventional compound semiconductor wafers.
In the foregoing specification, the invention has been described with reference to specific embodiments. However, one of ordinary skill in the art appreciates that various modifications and changes can be made without departing from the scope of the present invention as set forth in the claims below. Accordingly, the specification and figures are to be regarded in an illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of present invention.
Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any element(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential feature or element of any or all the claims. As used herein, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
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text:
Spoilers ahead, of course.
Am I implying that the evilest of creatures in the Ponyverse is...MAN?
That's right, the Pony Conversion bureau fanfics were correct. Ponies are superior to us in every conceivable way.
In the Ponyverse, the Element of Magic cannot work without the other Elements because it is based on dependence on friends. In the human world, it not only works regardless of any other Elements (proof that humans are selfish beings who only depend on themselves) but turns lone human wielders into demonic monsters. It's implied this is so not because Sunset is a powerful unicorn in her homeworld, but because the human world has corrupted the element.
When the Elements DO work properly, they cannot process that humans could POSSIBLY use it for harmonious purposes. So they partially convert the wielder into a pony so that "True" harmony can be restored.
Final proof can be seen when the Human Six have NO PROBLEMS WHATSOEVER with being turned into anthropomorphic pony abominations, complete with horse ears, and when Pinkie tries escaping the hell that is the human world with Twilight.
Basically, Lyra is the Ponyverse equivalent of a Satan worshiper.
And personally, I'm offended by this treatment and image of humans.

subset: commoncrawl


text:
Posted at: 02/15/2013 11:55 AM
Updated at: 02/15/2013 12:28 PM
By: Subrina Dhammi
GLENS FALLS - A dozen people have been left homeless after an early morning fire causes substantial damage to an apartment building.
One woman says she, and several others, jumped out of a second story window to escape the flames.
Fire fighters remained on the scene, ripping apart pieces of the roof, and hitting the building with more water.
The flames spread quickly around five Friday morning.
The building on Shermantown Road has three full apartments, and six rooms for rent on the top floor.
About a dozen people lived here.
The fire started in a first floor apartment in the back of the building.
The damage is substantial; it's not safe for residents to return.
The building has been damaged by fire before


text:
Hey guys,
I'm suddenly getting a low memory crash on older devices (iPad1). I don't know what specifically has changed, other than upgrading my Unity version (from 3.5.0 to 3.5.1), but is there any way to diagnose this? I suspect it has to do with using 2048^2 textures, but shouldn't the PVRTC compression reduce memory usage?
Any help would be much appreciated!
asked Apr 26, 2012 at 08:56 PM
More info: The game crashes as I load the following sequence of scenes: Menu -> Game -> Menu -> Game crash
I think some assets may not be clearing from memory.
Apr 27, 2012 at 12:55 AM sandworm
add new comment (comments are locked)
I've seen similar results. What I recommend doing is, crunch your poly count down, compress textures, try not to use alphas, and try to bring your texture size down. 2048 is huge!
answered Apr 27, 2012 at 01:51 AM
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text:
Early childhood development centres have opened in Hong Kong to provide alternative learning opportunities. Demand is rising for more informal educational spaces that can help children build skills not taught in the classroom.
Course overview
Course profile
The aim of the program is to provide students with analytical framework and practical tools necessary to manage financial risk in global financial markets. The program covers a number of units that are similar to the Financial Risk Manager levels 1 & 2 exams and offers in-depth coverage of financial risk management, valuation of relevant derivative instruments, hedging strategies and the usefulness of the financial instruments in managing financial risk. The program is both analytical and practical and students will acquire skills and knowledge that are highly relevant for their professional career development. Cases will be used to provide many real-life examples.
Course details
Primary Area of Study
Applicants should
a) hold a bachelor's degree awarded by a recognized institution;
b) provide evidence of English proficiency (if the degree or equivalent qualification is from an institution where the language of teaching and assessment is not English) such as one of the following:
i)an overall band of 6.0 with no subtests lower than 5.5 in the IELTS;
ii)a score of 550 in the paper-based TOEFL or a score of 213 in the computer-based TOEFL, or a score of 80 in the internet-based TOEFL;
iii)HKALE Use of English at Grade E.
c) have passed Calculus or Statistics at university first-year level.
Applicants with other qualifications will be considered on individual merit.
(This course is closed for application.)
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Questions about writing in specific genres, such as science fiction, or about genres in general.
60 views
What are common academic categories of a story's relationship to an audience?
I'm trying to understand the concept of an audience. I feel like exposure to modern stories has given me a vague sense about aspects of this concept but I would really like someone with more formal ...


text:
The Talera trilogy--Swords of Talera, Wings Over Talera, and Witch of Talera--was published in book form in 2007, although it was written years earlier. In 2008 I started a new arc in the Talera story, a novel to be called Wraith of Talera. I completed 21,000 words on the book over the summer, but when school started I had to put it away for various nonfiction projects that I needed to work on related to my professional career. Various other fiction and nonfiction projects intervened in the ensuing years, and so the partial has lain dormant on my computer ever since.
Labels: New book, Talera Trilogy, Wraith of Talera


text:
It's that time of the week, y'all, to take a look at the most sizzlin' styles from all your favorite VH1 stars. This week we know that lots of our VH1 fam were busy taking the ALS ice bucket challenge or hearing the news that their ex husbands were engaged but that didn't stop them from turning it out.
From Atlanta Exes' Torrei Hart in white to newly single Nicole Murphy looking ultra fierce to newly divorced Malaysia Pargo rocking a sexy selfie, the single ladies were not playing around.
But that's not all, everyone from The Game to Hit The Floor's Robert Christopher Riley were on point. Take a look and let us know who you think is the best dressed for this week.
Happy Weekend!


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Men's Golf
Lobo TV Archives
2005-06 Men's Golf Archive
Season Results
July 06, 2006
Anderson, Bierbaum and Geyer Named Spring 2006 Academic All-Mountain West Conference
June 08, 2006
Choi Named PING Second Team All-American
June 06, 2006
Four Former Lobos to Play in 2006 U.S. Open
June 01, 2006
Choi and Beljan Named All-Southwest Region
May 20, 2006
Lobos End Season at NCAA West Regional
May 19, 2006
New Mexico Moves Up to 15th After Two Rounds
May 18, 2006
Lobos Tied for 18th At NCAA West Regional
May 16, 2006
New Mexico Travels to NCAA West Regional
April 29, 2006
Lobos Make it Four Straight MWC Titles
April 29, 2006
Choi Earns All-Conference Honors
April 28, 2006
UNM Alone in First After Two Rounds at the MWC Championships
April 27, 2006
New Mexico Tie for First Round Lead at MWC Championships
April 25, 2006
Lobos Look to Make it Four Straight MWC Championships
April 17, 2006
Lobos Finish Tied for Sixth at Aggie Invitational
April 11, 2006
Lobos Finish Tied for Third at Wyoming Cowboy Classic
March 28, 2006
Choi Wins Medalist Honors, Lobos Finish Eighth
March 27, 2006
UNM is Tied for Sixth at the National Invitational Tournament
March 26, 2006
Lobos Fourth at the National Invitational Tournament
March 21, 2006
Lobo Junior Varsity Tied for Ninth at Ron Moore Invitational
March 19, 2006
New Mexico Finished 12th at Hall of Fame Invitational
March 18, 2006
UNM Remains 12th After Second Round of Hall of Fame Invitational
March 17, 2006
Lobos Tied for 12th at Hall of Fame Invitational
March 15, 2006
Lobos Head to Texas for Hall of Fame Invitaional
March 12, 2006
Lobos Finish 12th at the Southern Highlands Intercollegiate
March 11, 2006
New Mexico is 10th at the Southern Highlands Collegiate
March 10, 2006
Lobos 14th at Southern Highlands Colllegiate
March 09, 2006
Lobos Face Tough Field at Southern Highlands Collegiate
February 24, 2006
Lobos Move Up to Finish Third at John Burns Intercollegiate
February 23, 2006
New Mexico Tied for Seventh at John Burns Intercollegiate
February 22, 2006
Lobos Tied For Sixth After 18-Holes at John Burns Intercollegiate
January 31, 2006
Lobos Move Up One Spot to Fourth at PING Arizona Intercollegiate
January 30, 2006
Lobos Fifth at PING Arizona Intercollegiate
January 27, 2006
Lobos Look to Defend Title at PING Arizona Intercollegiate
November 12, 2005
Lobos End Fall Season With Loss to Oklahoma State at Hooters Collegiate Match Play Championships
November 11, 2005
Lobos Fall to Arizona State, Defeat Missouri at Hooters Collegiate Match Play
November 10, 2005
Lobo Men's Golf Sign Kyle Nielsen to National Letter of Intent
November 08, 2005
Lobos Will End Fall Season at Hooters Collegiate Match Play Championship
November 01, 2005
Lobo Junior Varisty 13th at Herb Wimberly Intercollegiate
November 01, 2005
UNM JV Finishes 14th at Herb Wimberly Intercollegiate
October 25, 2005
New Mexico Moves Up to Finish Ninth at Isleworth Collegiate Invitational
October 23, 2005
Lobos Tied for 15th at Isleworth Collegiate Invitational
October 21, 2005
Lobos Travel to Florida for Isleworth Collegiate Invitational
October 04, 2005
Chris Wall Named Assistant Men's Golf Coach
September 28, 2005
UNM Finished Tied for Eighth at PING NCAA Championship Preview
September 27, 2005
Lobos Move Up One Spot to Tie for Sixth at PING NCAA Championship Preview
September 26, 2005
Lobos Tied for Seventh at NCAA Fall Preview
September 25, 2005
Lobos Head to Familiar Territory for NCAA Championship Preview
September 17, 2005
Lobos Move Up to Finish Tied for 8th at 51st Annual William H. Tucker Invitational
September 16, 2005
Lobos Struggle to 11th Place at William H. Tucker Invitational
September 14, 2005
Lobos Host 51st Annual William H. Tucker Invitational
August 25, 2005
Choi Drops Third Round Match at U.S. Amateur
August 25, 2005
Jay Choi Advances to Round of 16 at the 105th U.S. Amateur
August 24, 2005
Jay Choi Advances to Second Round of 105th U.S. Amateur
August 23, 2005
Beljan and Choi Adavance to Match Play at 105th U.S. Amateur
August 22, 2005
Beljan Leads First Round of US Amateur Stroke Play
More Headlines
Lobos Get Record Number of All-MW Academic Picks
It's Another National Honor For Gavin Green
Gavin Green Three-Peats As An All-American
UNM's Gavin Green Named to PING West Region Team
Lobo Golf Men's Season Ends at NCAA Regional
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text:
2008-2009 (Junior Season)
Won a national championship with the 200 medley relay at the NCAAs.
Posted a second-place finish in the 50 freestyle and an eighth-place effort with the 200 freestyle relay at the NCAAs.
Finished 41st in the 100 freestyle at the NCAAs.
Named First Team All-SEC after winning the 50 freestyle at the SECs.
Finished third with the 200 freestyle relay, ninth in the 100 butterfly and17th in the 100 freestyle at the SECs.
Swam on the school-record 200 freestyle and 200 medley relay teams and ranks third in the 50 freestyle and fifth in the 100 butterfly.
Named to the Fall Athletic Director's Honor Roll.
Named to the SEC Winter Academic Honor Roll.
Named a CSCAA Scholar All-American.
2007-2008 (Sophomore Season)
Finished 36th in the 50 freestyle and the 100 butterfly at the NCAAs.
Swam on the 200 medley relay that came in sixth and the 200 freestyle relay that placed 14th at the NCAAs.
Came in eighth in the 50 freestyle and 10th in the 100 butterfly at the SECs.
Helped the 200 medley (fourth) and 200 freestyle (sixth) relays score at the SECs.
Named to the Fall Semester Athletic Director's Honor Roll as the Lady Bulldogs recorded the highest GPA among Georgia's women's sports.
Named to the SEC Winter Academic Honor Roll.
2006-2007 (Freshman Season)
Swam on the 200 freestyle and 200 medley relay teams that placed second and fifth respectively at the NCAAs.
Placed 26th in the 50 freestyle and 30th in the 100 butterfly at the NCAAs.
Named Second-Team All-SEC by the league's coaches and Honorable Mention All-SEC by the Knoxville News Sentinel following the SEC Championship.
At the SECs, finished third in the 100 butterfly and fourth in the 50 freestyle and was on the 200 and 400 freestyle and 200 and 400 medley relays that placed second.
High School
Graduated from McDonogh.
Swam for Eagles Swim Team (EST) for Coach Scott Ward
Was a 16-time High School All-American.
Was the independent high school national champion in the 100 butterfly.
Was an Olympic Trials Qualifier in the 50 freestyle and 100 butterfly.
Was the Maryland state champion and record holder in the 50 freestyle.
Finished seventh at the 2005 World Championship Trials.
Born Feb. 29, 1988.
Daughter of John and Linda Botek.
Majoring in Marketing.
Collegiate Personal Bests
50 Freestyle 21.80 03/19/2009
100 Freestyle 49.48 03/19/2009
100 Butterfly 52.94 12/06/2008


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ALBUQUERQUE, N.M. – Baseball is a crazy game. An inch here or there can mean the difference between victory and defeat. Luckily for the Lobos, they came away with a 2-1 10-inning win over the visiting Air Force Falcons Thursday night at Lobo Field.
After a wild bottom of the ninth that saw UNM tie the game, Aaron Siple's bases-loaded single over a five-man infield in the bottom of the 10th kept the Lobos (36-17-1, 19-9) alone in the first place in the Mountain West.
"It was definitely strange (seeing five infielders)," Siple said. "I was looking, honestly, to get a way to the outfield any way possible. We were looking at maybe squeezing there, but there were five infielders and they were all playing in. So I took a breath and said to myself, let's get a ball to the outfield, and I just poked one out there."
The Lobos wasted a great performance by Josh Walker, who was trying to tie both the UNM and Mountain West record for career wins. The senior from Rio Rancho, N.M., tossed 7.1 innings and allowed a single unearned run. He allowed nine hits, but eight of them were singles, and he walked just one. He struck out four and threw 74 of his 104 pitches for strikes.
"The good thing is Josh Walker pitched his tail off, and the bad thing is he didn't get a W for it," head coach Ray Birmingham said. "The young man that had a chance to get a W, should have got a W, and we, collectively, didn't come through when we needed to (early in the game)."
Trailing 1-0 in the bottom of the ninth, Siple led off with an infield single to shortstop. Chase Harris, who went 4-for-4, was then hit in the arm on a 1-2 pitch to put men on first and second. That brought John Pustay to the plate.
He smashed a 2-2 pitch off the bag at third. Typically, that would mean good things for UNM, but the ball bounced straight up into the air and it came down in the glove of Air Force's third baseman, Tyler Saleck, while he was standing on the bag. What had the potential to be a game-ending walk-off double turned into a force out at third.
"None of us have ever seen a play like that before," Birmingham said. "I've seen it hit the bag and skip down the line or into the outfield, but I've never seen it pop straight up and wait for the third baseman to step on the bag and catch it at the same time. It was a crazy night."
The Lobos still had men on first and second with just one out, though, for Alex Real. He hit a 2-2 comebacker right to the pitcher. He turned and quickly threw to second for the force, but the throw to first was just wide and it pulled the Falcon first baseman off the bag. Harris was running all the way and scored standing up to tie the game and force extra innings.
"I had made up my mind before the play (to keep running) in case there was a double-play ball," Harris said. "The only downside was that it was hit right back to the pitcher, and I didn't know if I had a chance to get there without having what happened happen. I think if it's a good throw, Real would've been out. I didn't even look at (third base coach Ken) Jacome. I just get going."
Harris' hustle allowed the Lobos to win it in the 10th. The rally began with a great piece of two-strike hitting by Andre Vigil, who lined an 0-2 pitch to center with one out. Jered Meek then worked a five-pitch walk before Sam Haggerty walked on four pitches to load the bases. That led to a pitching change for Air Force and the unique defensive alignment.
After looking at two close strikes, Siple fouled one off to the left side on a very defensive swing. Then he looped the next pitch over the drawn-in infield into right center to score Vigil and set off a wild celebration by the Lobos.
"I was just looking for a ball up because there were only two outfielders," he said. "Then once I got two strikes I was just battling. That's all I could've done, just poked it out there."
Siple's single was UNM's only hit in five tries with the bases loaded as the Lobos left 14 men on base. But on a night when the Lobo hitters struggled to collect key hits, the Lobo pitchers did a tremendous job.
Freshman Carson Schneider relieved Walker and was perfect in one inning of work. Junior Jake Cole (3-1) pitched the final 1.2 innings and struck out a pair. The only base runner he allowed was a one-out walk in the 10th.
"We pitched very well," Birmingham said. "We gave up one run and that came because of a defensive mistake. That's just the way it goes."
The Falcons' only run came in the fourth. Following a leadoff double by Seth Kline, Walker induced a bouncer to Haggerty at short. Kline broke for third, but Haggerty's throw was a bit wide to Vigil and Kline slid in safely. He scored on a sacrifice fly by the next batter to give Air Force a 1-0 lead that it held until the ninth.
Aside from Harris' four-hit performance, Lane Milligan went 3-for-5 and both Siple and Vigil finished 2-for-5 as UNM out-hit the Falcons 13-9.
With the win UNM remains a game up on UNLV in the Mountain West standings after the Rebels defeated the Nevada Wolf Pack 8-1 in Las Vegas. A win by UNM in either of its next two games against Air Force, or a single loss by UNLV, will guarantee a share of the regular-season title for the third straight year for the Lobos.
UNM and Air Force will meet Friday night at 7 at Lobo Field. Junior Colton Thomson will get the start on the mound for UNM and will be opposed by freshman Griffin Jax, who shut out the Lobos in Colorado Springs, Colo., earlier this season.
"Any game you win at the end can get you a little momentum," Harris said. "Hopefully we can keep that going tomorrow and Saturday."
Notes: Haggerty recorded his seventh double of the season … Walker lowered his season ERA to 3.86 and the Lobo pitching staff is now at 4.25 on the season … attendance was 756 … it was UNM's fourth straight one-run game … they are 3-1 over that stretch.


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Health Policy, Biotechnology and the Law Journal Club
April 17, 2007 12:30pm - 1:30pm
April 17, 2007 12:30pm - 1:30pm
Meeting for students and faculty from around the University to gather and discuss articles and issues related to health policy, medicine, biotechnology and the law. Please expose the event to the public.
- Jaime King - firstname.lastname@example.com


text:
Medicine Mama's, Vmagic, Skin Cream, 2 fl oz
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THE Best - Absolutely Lovely
6 people found the following review helpful
Posted by 5043001629835423471 on Aug 11, 2013
A truly 'magical' cream. A little dab will do, so a little goes a long way. Feels lovely as just a cream for the intimate areas. However, this is THE Best lubricant my husband I have found. Feels so natural, lasts a long time and stays where it's needed. We have both enjoyed benefits from this magical cream. We will always keep a jar handy.
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5 people found the following review helpful
Posted by Reviewer2900762 on Jun 27, 2013
Amazing at getting rid of any rashes down there whether it be from shaving ( ladies you know those bumps we get on the second or third day of shaving=well this lessens them and with time gets ride of them). As well, if you wax down there or anywhere else, it helps get rid of redness very fast with no irritation/break out ( and I have extremely sensitive skin on my face and apply it after waxing)
Would recommend to anyone.
Nice cream
3 people found the following review helpful
Posted by Reviewer1445976 on Nov 23, 2012
Nice cream for your private areas. I think it smells great and offers good comfort to shaved areas as well as softness. will purchase again
Good but pricey
1 person found the following review helpful
Posted by Reviewer1093705 on Dec 16, 2013
Really seems to sooth my skin after waxing, a little expensive for a small jar
Very soothing
Posted by Reviewer2900284 on Mar 19, 2014
Very soothing to sensitive tissues. I will definitely purchase again.


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A man in a fedora walks into an empty classroom on the second floor of a building on Washington University's campus and waits in the darkened... More >>
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Bottle-blond bangs swept over one eye — this, the other boys whispered, was not a man's haircut. One of them — a popular, handsome... More >>


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Click Here To Watch This Video at Butt Machine Boys
Hot studs getting ass rammed by machines. Gay, straight bi-curios, twinks, ass whores and first timers submit to powerful ass fucking and cock sucking machines.
Description: Mike was very excited to come back here after his last visit with Rhet. He has one of the prettiest holes in our stable of models. This time you can see him work his little pink-brown hole in this sol
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Lawrence G. McMichael has more than 37 years of trial experience in state and federal courts including numerous major jury and non-jury cases. In the last few years, he has appeared four times in the U.S. Court of Appeals for the Third Circuit. He is one of only a handful of attorneys in the U.S. to be a Fellow of both the American College of Bankruptcy and the American College of Trial Lawyers.
Our Web site's search function employs a variety of techniques to help you make the most of your queries. In this tips section we use square brackets [ ] to signal queries, so [antitrust and litigation] is one query, while [antitrust] and [litigation] are two.


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Math - Geometry - Area Worksheets
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Determine the area, or number of square units within the given shapes.� Includes basic shapes with squares drawn on it, rectangles where students multiply length times width, and other shapes that require formulas.
To see Common Core Standards for these worksheets, click on the apple core
symbol ().
Very Basic
(Counting Squares)
Count the squares to determine the number of square units each shape has.Area Worksheet 2 (Basic) Member
Find the area of each shape by counting the square units.Area & Perimeter 1 (Basic) Member
Count the centimeters to find the perimeter and area of each shape.Area & Perimeter 2 (Basic) Member
Find the perimeter and area of each rectangle. Includes examples.
BasicArea of a Rectangle 1 Member
Calculate the areas of the given rectangles by multiplying the width by the length. Requires only basic multiplication skills.Area of a Rectangle 2 Member
Find the area of each rectangle by multiplying the length by the width.Area of a Rectangle 3 Member
Write the area of each rectangle in the picture. Which one has the largest area? Which two are have the same area?Area of a Rectangle 4 Member
Draw a quadrilateral on the grid that has 20 square units. On the next grid, draw a square that has an area of 4 units. Then draw a square with an area that is 9 times greater.Game: Scoot (Area) Member
In this game, students move from desk to desk, around the classroom, and calculate the area of rectangles.Game: Area of Rectangle
"I have... Who has..." Member
In this whole-class chain reaction game, students must find the area of a shape on a card, and be ready to announce it when his card is called.Area of Right Triangles Member
Calculate the area of each right triangle using the formula given.Area of a Triangles & Rectangles (Basic) Member
Find the area of each rectangle and right triangle illustrated.Area & Perimeter of a Rectangle Member
Find the area and perimeter of each rectangle.
IntermediateArea of a Rectangle (Intermediate) Member
Students must multiply to find the areas of the rectangles shown. Requires knowledge of 2-digit multiplication.Area of a Circle 1 (Intermediate) Member
Students use the formula to calculate the area of each circle.Area of a Circle 2 (Intermediate) Member
Calculate the area of each of the eight circles shown.Area of a Circle 3 (Intermediate) Member
This area-of-a-circle worksheet has an explanation and example at the top of the page.Area of Circles with Example (Intermediate) Member
This area-of-a-circle worksheet has an explanation and example at the top of the page.
AdvancedArea of a Rectangle (Advanced) Member
Students must use their multiplication skills to find the areas of the rectangles shown. Requires knowledge of 2-digit multiplication, multiplying decimals, and multiplying fractions.Farm: Area of Rectangles Member
Use your ruler to measure the pigs' pen, the corn field, and the cows' pasture. Multiply to find the area of each.Area of a Triangles & Rectangles (Advanced) Member
Calculate the area of each triangle and rectangle picture. This activity teaches the relationship between the areas of right triangles and rectangles. Requires knowledge of 2-digit decimal multiplication.Area of a Circle (Advanced) Member
Determine the area of each circle shown. This worksheet includes radius amounts with double digit numbers and areas with decimals.Area of a Trapezoid Member
Use the formula to calculate the area of the three trapezoids shown.
See Also:Area of Triangles
These worksheets focus specifically on the finding areas of triangles.Perimeter Worksheets
Students must find the perimeter, or distance around a shapes, on each of these worksheets.Geometry Worksheets
All types of geometry skills, including polygons, lines, angles, symmetry, congruent shapes, and moreSurface Area
Calculate the surface area of rectangular prisms and other three-dimensional shapes.
Sample Images of
Area Worksheets


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|Danielle Clark
Clark, a junior forward, leads the Wildcats with 14.8 points and 6.5 rebounds per game. She has scored in double figures 16 times this season, including five games of 20 or more points. Clark is presently fourth in America East in scoring, fourth in free throw percentage (.821), and fifth in three-point field goal percentage (.403).
Previously this season, Clark was named MVP of the Lehigh Christmas City Classic and America East Wilson Player of the Week after averaging 20.0 points and 7.5 rebounds per game in UNH's overtime victories over Towson and Lehigh. She was also named to the All-Tournament Team at the Wildcat Classic after averaging 18.5 points and 5.0 rebounds per game against Cornell and Boston College.
Majoring in journalism, Clark was named to the America East Academic Honor Roll in 2004 and 2005. She has written news articles for The New Hampshire, UNH's student newspaper. This is the second consecutive year that a UNH women's basketball player has been voted First Team All-District, as Lindsay Adams (Theresa, N.Y.) earned the recognition last season.
Clark is joined on the All-District First Team by Brooke Queenan (Boston College), Brittany Keil (Holy Cross), Joy Gallagher (Wagner College), and Ann Strother (Connecticut). The members of the All-District First Team are now eligible for Academic All-America status, to be decided later this month.
The Academic All-America Teams program honors 816 male and female student-athletes annually who have succeeded at the highest level on the playing field and in the classroom. Individuals are selected through voting by CoSIDA, the College Sports Information Directors of America; a 2000-member organization consisting of sports public relations professionals for colleges and universities in the United States and Canada.


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Investment Companies - Buying and Redeeming Mutual Funds
Mutual fund shares are a continuous public offering as defined by the SEC. All sales must be accompanied by a prospectus. Because of the continuous offering nature of mutual fund shares, a rule called Regulation T prohibits the purchase of mutual fund shares on margin.
An investor can redeem fractions or whole shares of a mutual fund by selling them at the NAV. When will the redemption price be determined? At the same time that the fund company computes the daily NAV for the fund and determines at what price investors purchased shares after the close of trading yesterday or before the close of trading today, or 4pm.
Mutual fund companies must pay the proceeds of the redemption amount to the investor within seven calendar days.
Look Out!
You will need to know the time within which an investment company has to forward the proceeds of the mutual fund redemption to the investor. Do not confuse this time period with stock or bond settlement, and remember: CALENDAR days, not business days like other securities!
Offers of Exchange
Section 11 of the Investment Company Act of 1940 requires offers of exchange to be made at NAV only. This applies to exchanges within a single fund family and to exchanges from one fund family into another. The only exception to this rule is if the terms of the offer have been submitted to and approved by the SEC.
Distribution, Redemption and Repurchase
Section 22 of the Investment Company Act of 1940 requires the following for investment companies:
- They must determine a method for computing the minimum price at which a member of a securities association may purchase shares.
- They must prescribe the minimum time period that must pass after the sale or issue of shares before any resale to the investment company by a member or its redemption upon surrender by a member.
- No investment company can sell any redeemable security it has issued at any price except the public offering price, except to or through a principal underwriter for distribution.
- A securities association may prohibit its members from purchasing redeemable shares from the issuer except at a price equal to the public offering price minus a commission, spread or discount.


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The 2015 Ford F-150 crew cab is the firstaluminum-body vehicle to earn Top Safety Pick.
Automated enforcement can curb red light running and reduce crashes.
States continue to raise speed limits despite clear evidence that doing so leads to more deaths. See our speed limit map and table for a state-by-state breakdown.
Most vehicles get low marks forease of use of child seat anchors.
Search our crash test ratings and seethe full list of 2015 TOP SAFETY PICK+and TOP SAFETY PICK winners.
Take a look at the IIHS Vehicle
Research Center, a state-of-the-artcrash testing facility.
A new study could steerthe design of front crashprevention systems thatrecognize bicyclists.
IIHS research covers diverse territory to identifyhighway safety solutions, a new online video explains.
Many states still need improvementwhen it comes to teen driver laws.
The Insurance Institute for Highway Safety (IIHS) is an independent, nonprofit scientific and educational organization dedicated to reducing the losses — deaths, injuries and property damage — from crashes on the nation's roads.
The Highway Loss Data Institute (HLDI) shares and supports this mission through scientific studies of insurance data representing the human and economic losses resulting from the ownership and operation of different types of vehicles and by publishing insurance loss results by vehicle make and model.
Both organizations are wholly supported by these auto insurers and insurance associations.
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PDT Staff Writer
The Board of Trustees of the Community Action Organization of Scioto County (CAO) has appointed Bill Thacker as its executive director, succeeding the late Bob Walton, Sr.
"I have always made the statement that I'm succeeding Bob, but I have no pretensions of replacing him," Thacker said Tuesday afternoon."I am very grateful for the vote of confidence, and I look forward to working hard and validating their choice."
Thacker is a long time employee of CAO, beginning his career as director of the Head Start program, followed by his tenure as head of Planning and Development. He had served as the agency's interim executive director during Walton's extended illness. Walton died on April 27 at SOMC Hospice. He was 70.
"Bill is an excellent choice to continue the CAO tradition of effective and efficient service that was always evident under Bob's leadership," Chairman of the Board E.P Matthews said.
Thacker said CAO has become more relevant and necessary in recent years.
"As our economy seems to go even further into the tank here locally, the services we provide, which are basically a lot of safety net services, are more and more critical in the community," Thacker said. "We have more and more people who are uninsured in terms of access to health care. Both of our clinics are available for that. We still have the Comprehensive Employment Training Program as well."
Thacker said CAO has diversified over the years as the needs have changed in the community.
"Over a long period of time there is a great diversity," Thacker said. "The agency has grown, split into a whole lot more areas of concern, and areas of service than originally. We started out - day one - with about three different programs. Now we're operating somewhere in the neighborhood of 20 every year."
Frank Lewis may be reached at 353-3101, ext. 232, or at firstname.lastname@example.com.


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10:49 am
Mon May 14, 2012
'Law & Order' Star Inspired By Jazz, Soul, Blues
By Staff
Award-winning actress S. Epatha Merkerson is best known for her role on Law & Order as Lt. Anita Van Buren. She spoke to Tell Me More earlier this year about hosting Finding Our Own, a program spotlighting the cases of missing people of color. For the series, "In Your Ear," Merkerson shares the music that inspires her.


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The media pressure on Israel to refrain from launching a preemptive strike on Iranian nuclear facilities continues apace. The New York Times and Washington Post each have stories dedicated to either downplaying the Iranian threat or exaggerating the costs of attacking Iran, and both stories undermine their arguments.
First, the Times seeks to lay on the guilt with an article titled "U.S. Sees Iran Attacks as Likely if Israel Strikes." It is a warning to Israel to consider the fact that the U.S. would also be a target of Iranian attacks if the country's nuclear installations are bombed. But then the reporters seem to make the opposite case:
While a missile retaliation against Israel would be virtually certain, according to these assessments, Iran would also be likely to try to calibrate its response against American targets so as not to give the United States a rationale for taking military action that could permanently cripple Tehran's nuclear program. "The Iranians have been pretty good masters of escalation control," said Gen. James E. Cartwright, now retired, who as the top officer at Strategic Command and as vice chairman of the Joint Chiefs of Staff participated in war games involving both deterrence and retaliation on potential adversaries like Iran.
The Iranian targets, General Cartwright and other American analysts believe, would include petroleum infrastructure in the Persian Gulf, and American troops in Afghanistan, where Iran has been accused of shipping explosives to local insurgent forces.
That is, Iran may possibly target American troops overseas, which it is already doing. Additionally, the U.S. recently prevented a massive Iranian terrorist operation on U.S. soil, so an attack on the homeland would not be an escalation. And Cartwright's quote suggests an attack on Iran might have the reverse effect. As does this quote from the story:
Both American and Israeli officials who discussed current thinking on the potential ramifications of an Israeli attack believe that the last thing Iran would want is a full-scale war on its territory…. If Israel did attack, officials said, Iran would be foolhardy, even suicidal, to invite an overpowering retaliation by directly attacking United States military targets — by, for example, unleashing its missiles at American bases on the territory of Persian Gulf allies.
So in fact, an attack on Iran might encourage the Iranians to stand down for fear of inviting more attacks on their soil. The Washington Post story, on the other hand, tries to portray Israeli Prime Minister Benjamin Netanyahu as the boy who cried wolf. He's been warning the world of an Iranian nuclear threat for 16 years now, the article notes. Most of the story is armchair psychoanalysis that is almost entirely irrelevant, now that we know Iran has indeed been working toward a nuclear weapon all these years. The article also spends some time ridiculing the notion that Netanyahu, for some strange reason, believes that as prime minister of Israel his job entails the protection and safety of the Jewish people.
But the last two paragraphs of the story are where the action is. Here's the first:
Aluf Benn, editor-in-chief of the liberal daily Haaretz, who covered Netanyahu for years as the newspaper's diplomatic correspondent, said the prime minister had succeeded in shifting the diplomatic conversation, after the Obama administration had been focused previously on peace efforts with the Palestinians. Then, Netanyahu's rhetoric on Iran was seen as an effort to divert attention from Israeli settlement building in the West Bank, which was loudly opposed by Washington.
Leave aside the fact that Netanyahu's concentration on Iran "was seen as an effort to divert attention from Israeli settlement building" only by extreme partisans on the left who obsess about Jews adding rooms to their homes in West Bank towns that will be part of Israel in any peace agreement anyway. Also leave aside the fact that anyone who thinks that clearly doesn't take the Iranian threat seriously, and is thus not paying much attention to reality. The claim itself is disputed by the entire article leading up to it. If Netanyahu has been obsessing about the Iranian threat for 16 years, then it long preceded President Obama's bizarre decision to pick a fight with Netanyahu about settlements.
And here's the final paragraph:
"He did a very good job of changing the world's priorities," Benn said, "and he achieved that by saber-rattling vis-à-vis Iran. The problem is that you can reach a point when the political price of not going to war becomes too much to bear. If the Iranian nuclear program is a Holocaust, then the question becomes: What did you do, Mr. Netanyahu, to prevent it? You have to deliver."
Here's a riddle for you: When, in a democracy, does the political price of not doing something become too much to bear? Answer: When the public overwhelmingly supports that action. The ongoing attempt to paint Netanyahu as the leader of some kind of military junta is exactly the sort of thing you expect to hear from a Haaretz editor, but it's not something that will earn the Washington Post or its reporter much credibility.


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Spout Springs Emergency Services celebrates completion of renovation
Spout Springs Emergency Services (SSES) held a grand opening ceremony on March 4 at Station #2 on Highway 24/27 to celebrate the completion of the renovation project.
The ceremony was the highlight of a day-long open house that was hosted by Bob Doberstein, president of the Spout Springs Emergency Services Fire Board, and SSES Fire Chief Alan Jarvis.
Members of the local community, SSES firefighters and Harnett County leadership were on hand for the ribbon-cutting ceremony that marked the formal re-opening of Station 2, which covers the western portion of Harnett County.
During the ceremony, Jarvis presented Doberstein with a bronze plaque that will be mounted on the front of the firehouse. The plaque describes the dedication of Station 2 to Doberstein in honor of the many years of service to Spout Springs Emergency Services. He has been involved with Spout Springs Emergency Services for more than 30 years, back when the department was known as Spout Springs Rural Volunteer Fire Department.
The renovation of Station #2 was a four-month project that involved major modifications to the existing kitchen, dining area and bathrooms, as well as the addition of a training room, lounge and sleeping quarters.
To see more pictures and information about Spout Springs Emergency Services, go to www.spoutspringsfirerescue.com, or on Facebook at Spout Springs Emergency Services.


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August 4, 2015
Former Denison High School basketball standout T.J. Taylor has agreed to join the North Texas Mean Green, by announcing his decision on Twitter.
Taylor has made several stops since leaving Denison, including Oklahoma, Paris Junior College and Marquette.
Taylor returns to the North Texas area by saying that he will "take his talents to the University of North Texas" via his announcement on Twitter.
Taylor left Denison as the all-time scoring leader by piling up 2,630 points. He averaged 20.7 points, 7.4 rebounds and 4.4 assists as a senior in 2009-10, helping the Yellow Jackets to a 16-win season. He led them to a 21-11 record as a junior. Taylor was a three-time district offensive player of the year.
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St. Lucie County felony arrests: March 27, 2012
Michael Shiver, 41, 6500 block of North U.S. 1, Fort Pierce, aggravated assault with a deadly weapon.
Ryan McCann, 18, 3800 block of Southwest Kolsted Street, Port St. Lucie, burglary of an unoccupied conveyance unarmed; first degree petty theft.
Richard Petruccelli, 43, 2300 block of Southeast Rich Street, Port St. Lucie, criminal mischief; resisting arrest with violence.
Jennifer Gaynor, 39, 6700 block of Northwest Dorothy Street, Port St. Lucie, simple battery domestic.
Stephanie George, 57, Fort Lauderdale, arrested on an active warrant for uttering a forged bill check or draft.
Scott Turner, 32, 4400 block of Wabash Street, Port St. Lucie, possession of cocaine; smuggling contraband into a detention facility; possession of drug equipment; possession of oxycodone; burglary of a dwelling; dealing in stolen property; giving false information to a pawn broker; loitering and or prowling.
Vanessa Winford, 22, 1400 block of Southwest Glastonberry Avenue, Port St. Lucie, possession of a controlled substance (arrested in Martin County).
Cleveland Jamison, 21, 500 block of Southwest Butler Avenue, Port St. Lucie, dealing in stolen property; giving false information to a pawn broker (arrested in Martin County).
Robert Lewandowski, 32, 1600 block of Southeast Minorca Avenue, Port St. Lucie, possession of cocaine; possession of drug paraphernalia; resisting an officer without violence; driving while licenses is suspended (arrested in Martin County).
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Real Relationship Advice
Special needs means a lot. When a child is labeled as special needs, this activates a whole system that is mandated by law and implemented by educational professionals. Perhaps you have little faith in our educational system but we have total faith in the system and the professionals that run it. No, this does not mean we throw our children into a public school and hope for good results. We have educated ourselves, consulted with experts (Aida Reyes- Check her out) and advocated for our kids with the same ferocity of a grizzly caring for her cubs. One of the things people do not acknowledge and do not see as special needs is when you happen to be the parent of a gifted child.
In many places, gifted kids are actually part of the Special Ed departments of school systems. You see, their education is special. Gifted kids get bored. Gifted kids need to be stimulated or, if not, they will get frustrated and decide that school is not for them.
As parents of a multiply handicapped child and a gifted child (jury is still out on our 5 year old), we don't see much of a difference in how one was easier than the other. Yes, physically, our son is fine and is very capable. However, when you have a child with a high IQ, they sometimes get the idea that they are smarter than you and know better. My son on a regular basis tests our intelligence with questions. In fact, he gets upset because we know the answers!!! I need to remind him daily that his smarts were not created out of spontaneous generation.
At the same time we need to ride the fine line of not crushing him when he tries to assert his intelligence and control of the family. Crushing a kid is easy. Breaking a child's spirit is as easy as the wrong word or gesture. This is easier when your child is so smart that he can carry on a conversation that would elude most adults. It is so much easier to tell a child to 'shut up' or something crass like that when their questions are more than you can handle and you just don't want to explain how a lack of atmosphere allows the heat of the earth to escape thus lowering the temperature.
Gifted kids also tend to have a higher level of anxiety. They may understand abstract concepts but are unable to deal with them like death or old age. They can be manipulative and argumentative. All of these things can make your child moody and different from other kids. They can be abused and bullied by their peers because they are different. They can be ostracized because of their abnormal IQ; all of this from knowing too much too soon.
It is exhausting sometimes. Staying on top of things and making sure your kid is stimulated intellectually and yet still gets to be a little boy is a full time job. Sometimes we wish for the days of doctor visits for our daughter rather than another lesson on the periodic table. But alas, this is what we have. This is our blessing.
Our son is special. He has a very high IQ. He still does karate, plays video games and plays with friends. Sure, at night he will read a book on world religions and perhaps learn more about the periodic table that a regular 8 year old should know but that his him, brains and all.
I would share but the pic I have of my son with this woman isn't digital!
As a teacher of gifted, and the parent of a highly creative child....I nodded all the way through this post. It is so true.
I was very lucky in that my elementary school had its own special gifted & talented program. In 2-4 grade, I got to take 1-2 hours out of regular classes each week to attend an enrichment in one of the "mobile education units" our school had. In 5th and 6th grade, I got to go to the Young Scholars program, where I was pulled out of an entire school day each week for an off-site program. I loved the program, but other kids teased us mercilessly when they found out we were going to the BOCES building. While BOCES stands for Board of Cooperative Educational Services, it was well-known among students that this was where the stereotypical special ed kids went... and I was subjected to a wide array of highly offensive "retard" (how I hate that word) insults. My 6th grade English teacher egged on this sort of bullying and carried out some of it himself because he disliked when some of us missed HIS class each week.
Even with the bullying, though, that program was instrumental in helping to challenge me in keeping me invested in my own education. I got to read Homer's Odyssey in the 5th grade, as well as write and produce my own plays, design sturdy bridges with popsicle sticks, and experience guided imagery meditation.
Gifted students certainly require special educational services to nurture their minds. I agree with you strongly that parents should advocate for their gifted kids if the school is not already providing adequate challenges for them.


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Posted at: 01/26/2013 10:35 PM
RACINE, Wis. (AP) - A Racine man convicted of molesting a girl over a 14-year span has been sentenced to the maximum 25-year prison sentence, a far longer sentence than prosecutors sought.
A Journal Times of Racine report (http://bit.ly/X0SPTi ) says 51-year-old Kerry L. Chase berated his defense attorney when the sentence was handed down Friday. Prosecutors say Chase began assaulting the girl when she was in diapers.
The criminal complaint says he acknowledged to investigators that fondling escalated to full sexual assault when the girl was 11 or 12.
As part of a plea deal, prosecutors agreed to recommend a nine- to 10-year sentence. But Judge Tim Boyle said the least he could do for the victim was impose the strongest sentence possible.
Before sentencing Chase said he was sorry and accepted responsibility.
Information from: The Journal Times, http://www.journaltimes.com
(Copyright 2013 The Associated Press. All rights reserved. This material may not be published, broadcast, rewritten or redistributed.)


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200 Introduction to Comparative Studies: Cultures
in Conflict
CMPL 399 Critical Analysis
Major in CMPL with Language emphasis: Students will select all
six elective courses in their first and second foreign language of study.
Students must achieve an advanced proficiency level equivalent to one 400-level
seminar in their first foreign language of choice and complete two 300-level courses
or equivalent in their second foreign language.
Upon completion of all their electives, students will register for the Capstone Seminar on Political Fictions. In this seminar they will also conclude their individual research in their area of concentration and write a Senior Thesis. Additional information about the Capstone Seminar and Guidelines for the Senior Thesis are available on canvas.
Majors in Comparative Literature and
Culture are strongly encouraged to study abroad. Students should consult with the
Center for Global Education in UC 5th floor for information about USF Sponsored Study
Abroad programs.
enrolled in CMPL will register their progress toward
completion of their Major in an e-portfolio.
Students may transfer up to
twelve (12) units toward their elective requirements from another
institution or a study abroad program. To transfer, courses must be at the
minimum level of 300 or above, or its equivalent. To facilitate transfers,
student will provide the course syllabus, a major paper written for that course
and a petition form for each course.
minimum of twenty-four (24) of the total forty-four (44) units required for
the Comparative Literature and Culture Major must be completed in residence at
No more than eight units of
the CMPL major or minor can count toward a second major and/or minor.
To make an advising appointment, please write to:
Learning Goals/Outcomes for the Major in Comparative Literature and Culture
Students will be able to