text:
A negative resist material consists of poly (silsesquioxane) of weight average molecular weight 2000 or more represented by the general formula (1):
(CH2 ═CHCH2 SiO3/2)m (ClCH2 SiO3/2)n
where m and n denote the molar percentages of each component of the polymer, and m+n=100. A method of producing such a resist material and a method of forming a bi-layer resist pattern using the resist material are also disclosed.
1. A negative resist material, consisting of poly(silsesquioxane) of weight average molecular weight 2000 or more represented by the general formula (1):
(CH2 ═CHCH2 SiO3/2)m (ClCH2 SiO3/2)n ( 1)
where m and n denote the molar percentages of each component of the polymer, wherein both are positive numbers and m+n=100.
2. A material as set forth in claim 1 wherein the weight average molecular weight is 2500 or more.
3. A material as set forth in claim 2 wherein the weight average molecular weight is 3000 to 100,000.
4. A material as set forth in claim 1 wherein m is not more than 30.
5. A process for manufacturing a silicone resin used as resist material, wherein an oligomer is first obtained by hydrolyzing the trifunctional silane monomers represented by formulas (2) and (3) below for a time and temperature sufficient to produce said oligomer:
CH2 ═CHCH2 SiX3 ( 2)
ClCH2 SiY3 ( 3)
X, Y being chlorine, bromine, methoxy, ethoxy or acetoxy that is susceptible to hydrolysis, said oligomer thus obtained is then further polymerized in the presence of an amine basic catalyst in an amount sufficient to further polymerize the oligomers to higher molecular weight polymers having a weight average molecular weight of 2000 or more, said catalytic polymerization reaction being carried out in ketonic solvent for a time and temperature sufficient to give a compound represented by formula (1) below:
(CH2 ═CHCH2 SiO3/2)m �(ClCH2 SiO3/2)n ( 1)
m and n being molar percentages in which m and n are positive numbers and wherein m+n=100.
6. A process as set forth in claim 5, wherein the solvent in the polymerization is acetone, methyl isobutyl ketone, methyl ethyl ketone, dioxane or tetrahydrofuran.
7. A process as set forth in claim 5, wherein the basic catalyst used in the polymerization is triethylamine, tri-n-butylamine, pyridine, lutidine or --collidine.
8. A process as set forth in claim 5, wherein m is not more than 30.
9. A negative resist material according to claim 1 wherein m varies from 20 to 80 and n varies from 80 to 20.
10. A process according to claim 5 wherein m varies from 20 to 80 and n varies from 80 to 20.
11. A process according to claim 5 wherein the hydrolysis is carried out in the presence of an acid.
12. A process according to claim 5 wherein the hydrolysis is carried out in the presence of triethylamine.
This invention concerns a negative resist material used for manufacturing active elements, metallization patterns and the like involved in constructing semiconductor devices, a method of manufacturing such a negative resist material, and a method for forming resist patterns using this negative resist material.
In recent years, due to the higher degree of integration in semiconductor devices, a technique has come to be required in the manufacturing process which is capable of forming a fine resist pattern with a high aspect ratio (ratio of height of pattern/width of pattern). When carrying out multi-layer metallization, however, steps occur between the metallization formed on the substrate and the substrate surface, and these steps interfere when it is desired to form a new resist pattern for the next metallization.
In order to form a resist pattern on such a substrate with a high degree of dimensional precision, it is desirable to form a resist layer of sufficient thickness to cover these steps, thereby planarizing the surface following which the planarized surface can be exposed to electron beam or the like. By direct irradiation, however, it is extremely difficult in practice to form a pattern of the order of several submicrons in thickness on a film which may be as thick as, for example, 2 μm. This is particularly due to the fact that, although the number of backscattered electrons can be reduced by making the film thicker, forward scattering or scattering of incident electrons within the film becomes more marked for thicker films.
To overcome the above disadvantages, a bi-layer resist process has been proposed by which a fine resist pattern with a high aspect ratio can be obtained even from a resist film of considerable thickness.
This bi-layer resist process will be briefly explained with reference to FIGS. 1A to 1C. These drawings show part of the wafer in sectional outline.
In the bi-layer resist process, a resist pattern is obtained by using a lower resist layer 15 consisting of a thick film to absorb step 13 on substrate 11 thereby planarizing the surface, and an upper resist layer 17 containing silicon which is formed on lower layer 15 (see FIG. 1A). This upper layer 17 normally has a film thickness of about 0.15-0.3 μm, and is patterned by exposure to light or an electron beam, or other suitable means to obtain a resist pattern 17a (see FIG. 1B). The lower layer 15 is removed by O2 --RIE (Reactive Ion Etching) during which the resist pattern 17a is then used as an etching mask. In this way, the upper layer resist pattern 17a can be transferred to the lower layer 15, and a fine bi-layer resist pattern 19 with a high aspect ratio can thus be obtained (see FIG. 1C). Electron beam lithography using a bi-layer resist process can effectively reduce both the back scattering and forward scattering mentioned above.
Different resists have been proposed for this bi-layer process, and those used as the upper layer will now be described. As the upper layer must have resistance to O2 --RIE, various materials containing silicon were developed, for example that which is disclosed in "Journal of the Electrochemical Society, 130 [9], p. 1962 (1983)). The material proposed in this reference is a copolymer of trimethylsilylstyrene (denoted by SiSt) as a silicon-containing photoresist, and chloromethylstyrene (denoted by CMS), in a copolymerization ratio of 90:10. It is reported that the copolymer P (SiSt90 --CMS10) has both excellent O2 --RIE resistance and sensitivity to electron beams. According to this report, when P (SiSt90 --CMS10) is subjected to O2 --RIE, the amount of etching (which may hereafter be also refer to as the initial etching amount), which takes place until the decrease in film thickness shows the very small value of several A/min, is 220-290 Å. Further, the sensitivity to electron beams (radiationdose at which gelation being, DG i.) is stated to be 2.1 μC/cm2.
It is also stated that when P (siSt90 --CMS10) was used, a resist pattern of submicron order with thickness 1.6 μm was formed when the dose was 4.5 μC/cm2.
Conventional photoresists of the type described above present a problem in that, because the initial etching amount is as high as 220�-290 Å, they do not permit much uch process latitude. More specifically, since the initial etching amount is so high when this resist is used as an etching mask, the resist film has to be deposited fairly thickly. If on the other hand the upper resist layer is too thick, it is no longer possible to obtain a fine resist pattern with a high aspect ratio. There is therefore a limit to the thickness of the upper layer, and for this reason, the lower resist layer also cannot be made too thick.
Another problem with conventional resists is that the actual dose required for formation of submicron pattern is 4.5 μC/m2, which is high (meaning low sensitivity). Considering the fact that throughput with electron beam exposure is lower than with light exposure, a resist of higher sensitivity is required.
Many linear (or straight-chain) siloxanes consisting of silicone resins become insoluble in solvents when they are irradiated by an electron beam and, as they are also resistant to reactive ion etching with oxygen (O2 --RIE), various applications in bi-layer electron beam resists have been proposed. In cases where the molecular weight is not sufficiently high, however, many of these siloxanes approach the liquid state, so that their use as resists involves problems.
In this connection it is thought that "ladder" type siloxane resins, which are trifunctional silane polymers, may provide an answer to most of these problems on account of their special structure, wherein the two siloxane chains are fixed through an oxygen atom. Ladder structure siloxane resins are usually manufactured by polymerizing lower polymers obtained by the hydrolysis of trifunctional silane monomers with three functional groups, in the presence of an alkali catalyst, so as to give polymers of higher molecular weight.
It is, for example, widely known that phenyl trichlorosilane, which is one of the trifunctional silane monomers mentioned above, can be hydrolysed to give a oligomer, from which high molecular weight, benzene-soluble poly(phenylsilsesquioxane) can be obtained by heating in benzene in the presence of trace amounts of KOH as catalyst (J. Amer. Chem. Soc., Vol. 82, 1960, p. 6194-6195).
Silicone resin homopolymers or copolymers, where the substituent attached to silicon is allyl or chloromethyl, have properties of coatability and electron beam sensitivity which make them eminently suitable as bi-layer electron beam resists of the type the inventors have been considering. If the above method is applied to their synthesis, however, a gel is formed if the polymerization temperature is higher than 150� C., and it is difficult to obtain a polymer which is soluble in solvents. Further, even if the polymerization is carried out at a lower temperature, part is still converted to gel with the result that most of the siloxane extracted by solvent consists of lower molecular weight polymers.
An object of the invention is to provide a negative resist material with O2 --RIE resistance, and excellent sensitivity to electron beams and other high energy beams.
Another object of the invention is to provide a method capable of forming fine resist patterns with a high aspect ratio and with high throughput.
A further object of the invention is to provide a method of obtaining a solvent-soluble silicone resin under mild reaction conditions, eliminating the problem of gel formation in the polymerization reaction.
A negative resist material according to one aspect of the invention consists of poly(silsesquioxane) of weight average molecular weight not less than 2000, preferably not less than 2500, more preferably 3000 to 100,000 represented by the general formula (1) below:
(CH2 ═CHCH2 SiO3/2)m (ClCH2 SiO3/2)n ( 1)
where m and n denote the molar percentage of each component of the polymer, and m+n=100.
The poly(silsesquioxane) represented by formula (1) is a polymer of silsesquioxane. It may be prepared for example by hydrolysing a mixture of allyl trichlorosilane and chloromethyltrichlorosilane in a mixed solvent consisting of methyl isobutyl ketone and tetrahydrofuran, and polymerizing the resultant low copolymer at room temperature in the presence of, for example, triethylamine. The product is a colorless solid.
The negative resist material of this invention is a poly(silsesquioxane) wherein the molecule contains allyl and chloromethyl substituent groups. Allyl groups have a high tendency to polymerize, and if large numbers of them are included, the sensitivity of the negative resist to electron beams and X-rays is increased. Chloromethyl groups affect the contrast of the negative resist, and if large numbers of them are included, the contrast of the resist is heightened.
The molecules of the negative resist of this invention contain a substantial amount of silicon, and from the viewpoint of composition, there are 3/2 oxygen atoms for each silicon atom. As this is close to the composition of silicon dioxide, it may be expected that the O2 --RIE resistance of this resist material will also approach that of silicon dioxide.
Further, this resist material dissolves in ketones such as methyl isobutyl ketone and methyl ethyl ketone, or aromatic solvents such as xylene and chlorobenzene, and a resist solution for forming a resist pattern can therefore be easily obtained.
A method for a bi-layer resist pattern according to a second aspect of the invention comprises the steps of: forming a lower layer resist on a foundation, forming an upper layer resist on this lower layer, selectively irradiating the upper layer with an energy beam, developing the irradiated upper layer so as to form an upper layer resist pattern, and selectively removing the lower layer in an oxygen plasma using the upper layer pattern acting as a mask, said upper layer being formed of poly(silsesquioxane) of weight average molecular weight not less than 2000, preferably not less than 2500, more preferably 3000 to 100,000 represented by the general formula (1) above.
Said energy beam, moreover, may conveniently be an electron beam or an X-ray beam.
According to a third aspect of the invention, low polymers are first obtained by the hydrolysis of the trifunctional silanes described below. The low polymers are then further polymerized in a ketonic solvent in the presence of a basic solvent such as an amine.
This method permits the manufacture of ladder type silicone resins, represented by the general formula below, where the substituent group on silicon is allyl or chloromethyl:
(CH2 ═CHCH2 SiO3/2)m �(ClCH2 SiO3/2)n ( 1)
m and n being molar percentages.
More specifically, the silane monomers represented by formulae (2) and (3) below are hydrolyzed under acid conditions either alone or in admixture with one another in any molar fraction, and the resulting oligomer of molecular weight approx. 800 is then condensation polymerized in the presence of a basic catalyst. The final product is purified by precipitation:
CH2 ═CHCH2 SiX3 ( 2)
ClCH2 SiY3 ( 3)
In the above formulae (2) and (3), X and Y are groups susceptible to hydrolysis, such as chlorine, methoxy, ethoxy or acetoxy.
The basic catalyst used in the above condensation polymerization should preferably be one in which the reaction can proceed in a homogeneous system, such as an amine. Inorganic bases such as alkali metal hydroxides are not soluble in the solvents used, and are therefore unsuitable. Typical bases such which are used include triethylamine, tri-n-butylamine, pyridine, lutidine or γ--collidin. The condensation polymerization can be carried out with or without a solvent. The use of a solvent is, however, much more preferable, due to the fact that the reaction conditions are easier to control (from the viewpoint of stirring or stopping the reaction), the yield of polymer is higher, the properties of the resist are improved, and operations are more reproducible. The solvent used may for example be tetrahydrofuran, dioxane, acetone, methyl ethyl ketone or methyl isobutyl ketone.
As will be clear from the preferred embodiments to be described, the silicone resins obtained in this invention can be manufactured easily by choosing arbitrary values for the molar percentages m and n in formula (1). The silicone resins also have all the properties required of resists, i.e. solvent solubility, coatability and electron beam sensitivity.
Their sensitivity to electron beams is particularly high. In many cases, for example, the sensitivity was 2 μC/cm2 or higher (of a lower sensitivity) on the surface of the polymer film, which is a necessary condition for considerably reducing the backscattering.
When the resins of this invention are used to form patterns using an actual bi-layer electron beam resist, they have at least 30 times the resistance of conventional photoresists to the O2 --RIE mentioned above. This resistance is also more or less independent of compositional changes due to variation in the values of m and n, and they are, therefore, very suitable materials.
As described above, the method of forming negative resist material according to this invention involves the formation of a low polymer by hydrolysis of said trifunctional monomers, and the further polymerization of the low polymer in a ketonic solvent in the presence of a basic catalyst. Although the reason is not clear, this method conveniently avoids the gelation mentioned above. It also gives stable properties to the silicone resin product including solvent solubility, coatability, electron beam sensitivity and O2 --RIE resistance.
Now further consideration on the values m and n in the formulae (1) and (2) will be given below.
FIG. 3 shows variation in radiation dose (μC/cm2) required for removing 50% of the initial thickness of the resist layer, before and after curing in vacuum for 2 hours. When m was 30 and 20 respectively, the dose required for removing 50% of the initial thickness of the resist layer is almost unchanged. When m was 50 and 80, respectively, the dose required for removing 50% of the initial thickness of the resist layer is lowered after 2 hours of curing. This means there was marked post polymerization when m was 50 and 80, respectively. Accordingly, it can be said that m should be not more than about 30 to substantially eliminate post polymerization.
FIGS. 1A to 1C are diagrams illustrating the bi-layer resist manufacturing process.
FIG. 2 is a characteristic diagram showing the sensitivity of the negative resists of this invention to an electron beam.
FIG. 3 is a diagram showing the effect of post-polymerization in relation to the value of m.
Preferred embodiments of the invention will now be described.
7.0 g (40 mmol) of allyl trichlorosilane (manufactured by Petrach Systems, further purified by distillation) was dissolved in a mixed solvent consisting of 37 ml of methyl isobutyl ketone (dried over molecular sieves, abbreviated hereafter as MIBK), and 13 ml of tetrahydrofuran (dried over molecular sieves, abbreviated hereafter as THF). The mixture was cooled to 0� C. with stirring, and 4.0 g (40 mmol) of triethylamine (dried over molecular sieve, abbreviated hereafter as Et3 N) was added dropwise over a period of 5 min. After stirring for 5 min, 6.3 g (350 mmol) of water was added dropwise into the solution over a period of 20 min. Stirring was continued for 1 hour, and the mixture was then heated. While maintaining the temperature of the reaction mixture at 80�-85� C., stirring was continued for a further 4 hours. The solution obtained was cooled to room temperature, and diluted with 200 ml of ethyl acetate. After removing the aqueous layer with a separating funnel, the organic layer was washed with water until the solution became neutral, then with brine. This organic layer was dried with anhydrous magnesium sulfate, and the solvent was distilled off under reduced pressure on a water bath at 50� C. or a lower temperature to give 3.6 g of an oily substance. The weight average molecular weight of this oily substance was 850, which was judged to be an oligomer of polymerization degree about 8-10.
To 3.0 g of the above oily substance, 3.0 g of MIBK was added at room temperature with stirring, then 0.3 g of Et3 N was added and the mixture reacted for 15 min. After dilution with 4.0 g of MIBK, this was poured into 200 ml of methanol cooled in ice, and a white precipitate was obtained. This precipitate was filtered, washed twice with 50 ml of cold methanol, and dried under vacuum at room temperature to give 1.3 g of a resinous substance (Polymer (1)). The weight average molecular weight of this polymer (MW) was 3,000. It was dissolved successfully by benzene, toluene, xylene, chlorobenzene, acetone, methyl ethyl ketone, MIBK, diisobutylketone, 2-methoxyethyl acetate, 2-ethoxyethyl acetate, cyclohexane, ethyl acetate, trichlene, chloroform, THF, dioxane dimethyl formamide and dimethyl sulfoxide.
7.0 g (40 mmol) of allyl trichlorosilane was dissolved in a mixed solvent consisting of 37 ml MIBK and 13 ml of THF, and the mixture was cooled to 0� C. with stirring. 4.0 g (40 mmol) of Et3 N was then added dropwise over a period of 5 min. After stirring for 5 min, 1.1 g (60 mmol) of water was added dropwise into this solution over a period of 5 min, stirring was continued for 1 hour and the mixture heated. While maintaining the temperature of the reaction mixture at 80�-85� C., stirring was continued for a further 4 hours. The solution obtained was cooled to room temperature, 200 ml of ethyl acetate was added, and the aqueous layer was removed with a separating funnel. The organic layer was washed with water until neutral, and then washed with brine.
This organic layer was dried over anhydrous magnesium sulfate, and the solvent was distilled off under reduced pressure to give 3.6 g of an oily substance. The oily substance obtained was dissolved in 14.4 g of MIBK, 0.18 g of Et3 N was added, then the mixture was heated to 80� C. and stirred for 2 hours. After cooling to room temperature, it was poured into 200 ml of cold methanol, and a white precipitate was obtained. This was washed twice with 50 ml of cold methanol, and dried under vacuum to give 2.4 g of resin (MW=11,000: Polymer (2)).
A polymer was synthesized by exactly the same procedure as in Example 1-1, excepting the silicon compound starting materials were 5.6 g (32 mmol) of allyl trichlorosilane and 1.5 g (8 mmol) of chloromethyl trichlorosilane. The yield of the intermediate oligomer was 3.5 g. Starting from 3.0 g of prepolymer, the yield of product after condensation polymerization was 1.4 g (MW=8,500, Polymer (3)).
The results in Table 1 at the end of the Specification were obtained by the same procedure as in Example 1-1, excepting the ratios of allyl trichlorosilance and chloromethyl trichlorosilane in Example 1-3 above were as shown in the table, and were such that their total amount was 40 mmol. The amount of prepolymer used in the condensation polymerization was 3.0 g in all cases.
The procedure was the same as in Example 1-8, i.e. the ratio of allyl trichlorosilane and chloromethyl trichlorosilane was 20/80, but the condensation of the prepolymer was carried out in 9.0 g of MIBK. 1.1 g of resin (Polymer (11), MW=24,000) was obtained.
The procedure was the same as in Example 1-8, excepting 0.3 g of pyridine was used as the basic catalyst and the condensation polymerization was carried out for 1 hour, 1.0 g of Polymer (12) (MW=39,000) was obtained.
The procedure was the same as in Example 1-8, excepting 0.3 g of 4-dimethylaminopyridine was used as the basic catalyst and the condensation polymerization was carried out for 1 hour. 1.2 g of resin (polymer (13), MW=15,000) was obtained.
1.3 g (8 mmol) of allyl trimethoxysilane (manufactured by Petrach Systems, and purified by distillation), and 6.8 g (32 mmol) of chloromethyl triethoxysilane (manufactured by Petrach Systems, and purified by distillation), were dissolved in a mixed solvent consisting of 37 ml MIBK and 13 ml THF. 4.0 g (40 mmol) of Et3 N was added, and the mixture cooled to 0� C. with stirring. 10 ml (120 mmol) of 12N HCL was then dripped in over a period of 20 min. The mixture was stirred for 1 hour, heated, and stirring was continued at a temperature of 80�-90� C. for 4 hours. After cooling to room temperature, this was extracted by the same procedure as in Example 1-1, and the solvent was distilled off to give 3.7 g of oligomer. 3.0 g of this oligomer was then used for condensation polymerization and further processing as in Example 1-1 to give 1.4 g of Polymer (14) (MW=85,000).
0.9 g of the above Polymers (1)-(14) were dissolved in 5.1 g of MIBK, and filtered through a filter of pore size 0.2 μm so as to prepare a resist solution of 15 wt% concentration. The resist solution was spin-coated, onto a substrate consisting of a silicon wafer with a hard-baked 2 μm film of Microposit 2400 photoresist (Shipley). This was baked at 80� C. for 1 min on a hot plate so as to form a resist film of thickness specified in Table 2.
A desired test pattern was then written on the resist by an electron beam of accelerating voltage 20 KV. This pattern consisted of 10 sets of 1 μm lines and spaces. Several patterns were written by varying the radiation dosage. Each of 1 μm lines was scanned with 8 electron beams. The substrate was developed in MIBK for 1 min, rinsed with 2-propanol for 15 sec, and the remaining film thickness for each set evaluated with a Taly Step instrument. This value was divided by the original coating thickness to give the normalized remaining film thickness. The normalized values were plotted against the logarithm of the amount of radiation to give a characteristic curve. The sensitivity of this resist (the radiation dosage when the film thickness is 0.5 of its original value, Dn 0.5) on the organic film (Microposit 2400), as determined from the curve, and the slope of the tangent at this point which is the resist contrast γ0.5, are also shown in Table 2.
Three specimens were prepared, i.e., a silicon wafer with a hard-baked, 2 μm film of Microposit 2400 photoresist, and two silicon wafers with films of Polymer (1) and Polymer (8) deposited to thicknesses of 0.42 μm and 0.47 μm respectively. The O2 --RIE resistance of these specimens was determined by a parallel plate dry etcher, operated at a power density of 0.08 W/cm2, an etching chamber pressure of 1.5 Pa, and an O2 gas flow rate of 20 sccm. When the 2 μm film of photoresist had almost been completely etched (this required about 25 min), the substrates were removed, and the remaining film thickness of each polymer layer was measured. It was found that there had been slight decreases of film thickness, i.e. 0.05 μm for Polymer (1) and 0.06 μm for Polymer (2), which may be considered to be substantially the same. The O2 --RIE resistance of the silicone resins prepared in this invention was, therefore, approximately constant regardless of the copolymer ratio, and was also about 30 times greater or more than that of the photoresists commonly used.
On a silicon substrate with an SiO step pattern of height 1.1 μm, a hard-baked 2 μm film of Microposit 2400 photoresist was deposited for planarization, and on the latter film, a 0.3 μm film of polymer (1) was deposited. After writing various test patterns on this substrate with an irradiation of 3.5 μC/cm2, they were developed in MIBK, and rinsed in 2-propanol to give a negative resist pattern. This substrate was then subjected to O2 --RIE for 42 min under the same conditions as in Example 1 -16 to give a bi-layer resist pattern. The product was observed with a scanning electron microscope, which revealed 0.5 μm lines and spaces, 0.4 μm isolated lines, and 0.7 μm isolated spaces.
A bi-layer resist was formed by the method of Example 1-17, consisting of a bottom layer resist film of 1.0 μm thickness, and an upper layer resist film (Polymer (8) of thickness 0.23 μm. The radiation intensity was 2.2 μC/cm2, and O2 --RIE was carried out for 20 min. As a result, 0.4 μm lines and spaces, 0.3 μm isolated lines and 0.7 μm isolated spaces were found.
17.6 g (0.1 mol) of allyl trichlorosilane and 18.6 g (0.1 mol) of chloromethyltrichlorosilane were dissolved in a mixed solvent consisting of 186 ml methyl isobulyl ketone (also referred to as MIBK) and 64 ml tetrahydrofuran (also referred to as THF), and the solution was stirred while being cooled in ice.
To this solution, 22.9 ml triethylamine was added, followed by 31 ml water dripped in over a period of 15 min. While cooling in ice, stirring was continued for 3 hours, and the solution was heated under reflux for 2 hours.
This solution was cooled to room temperature, and the aqueous layer separated. The remaining organic layer was washed with water, an aqueous solution of NaHCO3, water again and brine, and was then dried over MgSO4 (magnesium sulfate). The organic layer was filtered, and the solvent was distilled off from the filtrate under reduced pressure to give a colorless, oily copolymer with a low degree of polymerization. The yield was 28.4 g.
4 g of the oily substance were taken, 0.4 ml of triethylamine were added and, after mixing thoroughly, the mixture was left for 30 min. This mixture solidified about 15 min after addition of the triethylamine. It was dissolved in a large amount of MIBK, then washed with water and brine. After drying over MgSO4, the filtrate from the solution was evaporated under reduced pressure to give a colorless or pale yellow solid. This solid is the negative resist material of this invention, and consists of poly(silsesquioxane) represented by general formula (1) below:
CH2 ═CHCH2 SiO3/2)m (ClCH2 SiO3/2)n (1)
where m and n denote the molar fractions of each component of the polymer, and m+N=100.
In this example, m and n in formula (1) above are both 50. The weight average molecular weight of the poly(silsesquioxane) in this Example was 8000. Other polymers were also synthesized in a similar manner to the procedure described in this Example, apart from the fact that the copolymerization ratio of starting materials was chosen such that m=66 or m=80 (see Table 3).
The results of experiments carried out regarding the sensitivity of the negative resist material to an electron beam will be explained.
2 g of a copolymer synthesized as described above (m=50) was dissolved in 3 g of chlorobenzene, and the solution was filtered through a membrane filter of pore size 0.2 μm to give a resist solution.
The resist solution was then spin-coated onto several silicon substrates which had been prepared in advance, using a spinner rotation speed of 1500 rpm. The substrates were pre-baked at 100� C. on a hot plate for 1 min so as to give several sample wafers each with a resist film thickness of 0.4 μm. This thickness of resist film was taken as the initial thickness.
A 10 μm line pattern was then written on these sample wafers using a 20 KV electron beam, varying the dose for each sample.
The sample wafers which had been irradiated by the electron beam were developed in MIBK for 1 min, and rinsed with IPA (isopropyl alcohol) for 15 sec. A post-bake was then carried out on each wafer at 100� C. on a hot plate for 1 min.
The film thicknesses remaining on the resist patterns formed on the surfaces of the sample wafers treated as described above, were then measured by a Taly Step (commercial name of the film thickness measuring device manufactured by Taylor Hobson) in the case of each wafer.
A graph was constructed with remaining film thickness normalized by said initial thickness (fraction of film remaining) on the vertical axis, and dose on the horizontal axis (FIG. 2.). The characteristic curve I is the fraction of film remaining on each sample wafer, plotted against the dose received by each wafer. It was found that the electron beam radiation for a film fraction of 50%, i.e. the sensitivity Dn 0.5, was 1.4 μC/cm2.
The resist therefore had a high sensitivity.
For copolymers with m=66 and m=80, resist solutions were prepared and their electron beam sensitivites were investigated in a similar way to the case of m=50. In FIG. 2, curve II shows the sensitivity characteristics of the resist with m=66, and curve III the characteristics of the resist with m=80.
The sensitivities of the resist with these copolymerization ratios were also found in a similar way to the case of m=50. The Table 3 shows the copolymerization ratios of all three types and their sensitivities Dn 0.5.
The following examples are those of the method of forming a bi-layer resist pattern described with reference to FIGS. 1A to 1C. In the following description, the numerals designating the corresponding layers are also reffered to. An explanation of the steps on the foundation (in this case, a silicon substrate) is omitted.
Microposit 2400-33 (product name of a resist manufactured by Shipley) was first spin coated onto silicon substrates 11 using a rotation speed of 3000 rpm. The silicon substrates were then post-baked in an oven at 220� C. for 1 hour, so as to form lower layer resist 15. The film thickness of this lower resist 15 was 2 μm.
Next, a chlorobenzene solution of the resist material of this invention having a copolymerization ratio with m=50% (20% by weight), was coated onto this lower layer 15 using a rotation speed of 2000 rpm. This silicon substrate was pre-baked on a hot plate at 100� C. for 1 min so as to form an upper resist 17. The film thickness of the upper resist 17 was 0.26 μm.
Various line patterns were then written on upper resist 17, using a 20 KV electron beam at a dose of 1.6 μC/cm2. This electron beam irradiated upper resist 17 was developed, rinsed and post-baked under similar conditions to those of Example 2-2 to give an upper resist pattern 17a. O2 --RIE was carried out on silicon substrate 11 for 25 min using a parallel plate dry etcher, operating conditions being an RF power density of 0.12 W/cm2, O2 gas pressure of 2.0 Pa and O2 gas flowrate of 10 sccm. The exposed portion of lower resist 15 which is not covered by upper resist pattern 17a is removed to give a bi-layer resist pattern 19.
After etching, the bi-layer resist was examined by an SEM (Scanning Electron Microscope). It was found that a 0.6 μm line and space resist pattern of height 2.2 μm, and a 3 μm width line pattern of pitch 3.5 μm, had been well-formed.
It was also found that when O2 --RIE was carried out on the negative resist of this invention, the amount (initial etching amount) of etching that took place until the etching rate had effeetively dropped to zero, was 100-140 Å.
A bi-layer resist pattern was formed in the same way as in Example 2-3a, excepting that the film thickness of Tower resist 15 was 3 μm, and O2 --RIE was carried out for 35 min. In this case, a 0.6 μm line and space resist pattern of height 3.2 μm was found to have been well-formed.
It should be noted that the Examples described herein are not exhaustive. The copolymerization ratio used in synthesizing the negative resist material of the invention, the film thicknesses used in forming resist patterns, and the accelerating voltages of the electron beams, may all be varied depending on the purpose.
It should also be noted that in the Examples above, similar results can be expected even if X-rays are used instead of electron beams. In this case, X-rays with the Pd-Lα characteristic are suitable.
As is clear from the above discription and the results of the examples, if silicone resins for resists are manufactured by the method of this invention, the disadvantage of gel formation in the polymerization is almost avoided, and a solvent-soluble silicone resin with a high degree of polymerization can be obtained in good yield. The silicone resins obtained have excellent properties for use as electron beam resists, i.e. they have good coatability, they gelate well when exposed to a low radidation dose with an electron beam, thereby rendering them insoluble in solvents, and they have excellent O2 --RIE resistance.
A resist pattern can be formed using the negative resist according to the invention, by an electron beam at a dose of 1.6 μC/cm2 or less, and therefore the exposure time can be considerably shortened in comparison with conventional resists.
Its O2 --RIE resistance is about 50 times higher than that of ordinary resists such as Microposit 2400-33, and it is thus very suitable as the upper resist in a bi-layer resist process. A fine resist pattern can moreover be formed with an aspect ratio of 5 on a lower resist layer of about 3 μm thickness.
This invention consequently offers negative resists with O2 --RIE resistance, and excellent sensitivity to electron beams and other high energy beams. It also permits the formation of fine patterns of high aspect ratio with a high throughput.
TABLE 1______________________________________ Prepolymer Polymer PolymerExample m/n Yield Yield --M--W Number______________________________________1-4 60/40 3.5 1.5 22.000 (4)1-5 50/50 3.6 1.4 27.000 (5)1-6 40/60 3.4 1.3 32.000 (6)1-7 30/70 3.4 1.3 44.000 (7)1-8 20/80 3.4 1.4 63.000 (8)1-9 10/90 3.6 1.4 47.000 (9) 1-10 0/000 3.7 1.5 6.000 (10)______________________________________
TABLE 3______________________________________Copolymer Sensitivity Dn 0.5Number m:n (μC/cm2)______________________________________I 50:50 1.4II 66:34 1.3III 80:20 1.0______________________________________
TABLE 2______________________________________ Film Sensitivity Dn 0.5Polymer Number ThicknessNumber (μm) (μC/cm2) γ0.5______________________________________1 0.46 3.3 1.62 0.50 1.1 0.93 0.42 1.8 0.74 0.42 1.2 1.25 0.44 1.4 1.16 0.52 1.6 1.37 0.41 1.8 0.88 0.40 1.9 0.69 0.38 4.3 0.810 0.41 5.8 1.311 0.44 5.0 1.312 0.45 3.1 1.013 0.44 8.0 1.214 0.44 1.4 0.9______________________________________
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Sports Purpose – Magnus Walker's 67SAndrew Ritter
There are car classifieds that you just have to pass on when you stumble upon them. Perhaps your budget has already been dwindled by a recent wheel purchase, your garage can't store another car, or your sense of better judgment finally speaks up. We've all been there. You muster up the strength and continue on in your web browsing, leaving behind a car that was calling your name.
All-American – KC's 1934 Dodge One-Ton PickupMike Burroughs
Photography by Curtis Pogue
The "Pickup Truck" is as American as baseball and the cheese burger. It is as American as our flag itself. KC's personal example shows what truly came of the American Pickup once it reached its prime. From the subtleties to the obvious, his 1934 Dodge 1-Ton Pickup is definitively true to its origins.
The pickup truck was born in 1925 with the introduction of Henry Ford's "Model T Runabout with a Pickup Body.
For the Wheel Guys – Livery WheelMike Burroughs
For as long as I've been modifying cars, it has been inarguable that wheels are the most defining, if not most important change one can make to a car. The wheel stands as one of the few components whose aesthetic contributions to a build can match the performance benefits of its unsrpung weight. Anyone with a cheque book can start a wheel company, but imagining, designing, and building truly impressive wheels is an art form.
H2Oi 2013 was filled with truly impressive cars, as it is every year – but no matter how many Volkswagens, Audis, Porsches, and BMWs you gather in one place, nothing will define "cool" quite like Jason Sellers's 1964 Lincoln Continental Convertible. Despite my love for German cars, the American yacht stole the show, encompassing a lengthy number of things I truly love about cars and style.
A Volvo Guy – Greg Keysar and his 1974 Volvo 142 GLMike Burroughs
With each new article comes a new story, often entirely unique. From the car to the owner, each presents a story that tells of what is often a lifelong love for automobiles – I find myself prodding each owner with questions, inquiring about the idiosyncrasies that define each car's uniqueness and history. My favorite question of all, however, is about the owner.

subset: commoncrawl


text: La Samaritaine from £12.30 to £22.45 Per unit Contact Us Book It Images Map Overview Set in the lovely Ardennes countryside, ideal for couples and young families A very attractive site with large pitches separated by flowering shrubs, beautifully kept grounds and facilities and a friendly atmosphere. Worth visiting are weekly farmers' markets, a beer museum, a zoo where day is turned into night, a historic iron furnace with a dazzling multimedia show, the Great War sites of the Maginot Line and Verdun, the Museum of War and Peace – and in Belgium, a brewery in a Trappist monastery Location Quiet countryside setting one mile from the village, next to public fishing and swimming lakes Villy Maginot Line fort 20 miles, Belgium 26 miles, Verdun 35 miles, Charleville-Mézières 36 miles, Reims 49 miles, Luxembourg city 73 miles, Calais 218 miles Modern facilities among attractive trees and shrubs Information High season – usually peaceful; friendly atmosphere with an international clientèle; ideal site for couples and young families Low season – tranquil, beautiful countryside location, convenient for discovering region Municipal site run by Franco-Dutch couple Tony and Petrie Mauget, English spoken Can be noisy during weekends in September due to group bookings All types of BBQs permitted and two communal BBQs provided Dogs welcome. Site Accessibility Dedicated accessible facilities - please ask for further details Reviews There are currently no reviews for this Site. Why not be the first? Leave a Review Facilities La Samaritaine has the following facilities on or around the site. Large pitches (mostly 100m2-150m2); open and part-shaded; with or without electricity (10A); some with water and drainage Basic provisions TV/recreation room Washing machines Please note that some facilities may not be available for the full opening period of the campsite Snacks and take-away Activities for younger children Modern wash block Wi-Fi on pitches (charge) Pricing Sites often charge for an additional vehicle, including a car towed by a motorhome. You should also expect to pay extra for pets and awnings. We only charge you for extra equipment if the site charges us. Solo campers may be entitled to reduced pitch fees on some sites. Please proceed to book in order to find the latest prices, availability, or if you are looking to start your stay within less than 2 weeks please call us. More information on pricing can be found here.


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UPDATED: 'Top Chef: New Orleans': Who dat gonna be Top Chef?
Top Chef chooses a winner. [Read More]
'Top Chef New Orleans': See? Food!
For the love of Louisiana: more seafood, less foam, please. [Read More]
'Top Chef: New Orleans:' Warancini
A question for the ages: Is there such a thing as "too many risotto balls?" [Read More]
'Top Chef: New Orleans': Commandeering the palace
The chefs have to replicate famous dishes from Commander's Palace and I come to realize the Top Chef website doesn't have a command of the English language.[Read More]


text: Once again, the Clearwater Christian College Lady Cougars Volleyball team has received the Team Academic Award from the American Volleyball Coaches Association. In order to be a recipient of this award, the team must maintain at least a 3.30 cumulative grade point average on a 4.0 scale. The Lady Cougars have received the AVCA Team Academic Award eight times. Since its inception in the 1992-1993 academic year, the Team Academic Award has steadily grown into one of the most highly sought after awards in the area of high school and collegiate sports. Not only does the receipt of this award stand as a testament to competent teamwork and athletic ability, but also a dedication to collectively excel in scholastic pursuits. Coach Vickie Denny said, I am very proud of our team's academic accomplishments. This is the eighth time we have received the AVCA Team Academic Award. This year's team GPA was the highest ever. The Lord blessed us with some really smart young ladies, but more important is their heart for God. For more information on the award and the AVCA, please visit 2009-2010 AVCA Team Academic Award Release. Congratulations, Lady Cougars! Print Article


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O-H-I-O Share your pride
"Families" Images (424)
"Rocky O-H-I-O"
by Rod Gasch - Laurie's husband
A statute of movie icon Rocky, outside the Philadelphia Museum of Art, assists Laurie Kirsch (Class of 1976) and her sons Noah Gasch (right) and William Gasch. Kirsch is on the faculty of the University of Pittsburgh, and lives near Evans City, Pa.Alumni, Families, US
by Jon Mundorf - Buckeye fans living in Naples, Florida
OSU vs TTUN November 24, 2012Families
"The Jennice Family OHIO"
by Greta Jennice - fan of the best team in USA, GO BUCKS
The Jennice family from TrimbleFamilies
by Kristin
Family getting pumped for the game tomorrow.Families
"O-H-I-O on Top of the Rock - NYC"
by Jeri Lynn Houck - 1983 graduate from School of Allied Medical Professions with Bachelor of Science degree in Physical Therapy; now living in Tampa, Florida area working in Home Health
in NYC on Top of the Rock - Rockefeller Center; left to right: Jennifer Jarvis (sister, North Canton, Ohio), Esther Hunter (mom, from Mansfield, Ohio, now of Ocala, Florida), Empire State Building, and me (Jeri Lynn Houck)Alumni, Families, US
"Buzz is a Buckeye!"
by Chris Furbee - RN @ Richard M. Ross Heart Hospital and MS nursing student in Adult Health
The Furbee kids of Grandview Heights, OH prove once and for all that Buzz is a Buckeye during a recent visit to Walt Disney World!Current students, Faculty/Staff, Families, Travel/Vacation, US
"O-H-I-O From The Farm!"
by Luke Citro - Biophysics Graduate Student (2013, hopefully, haha)
My nephew Duval, brother Jake, and nieces Aubrey and Coral (left to right) giving us a big O-H-I-O from atop a lumber pile on my parents' farm in Scio, Ohio.Current students, Families
"Jim Shirilla and family at Disney"
by Jim Shirilla - OSU Graduate, Economic Degree class of 1991
Alumni Jim Shirilla celebrating his birthday with his wife and two daughters Ashley and Lauren and doing O-H-I-O with Eeyore at Disney in Orlando, Florida.Alumni, Families, US
"Family photo session Myrtle Beach"
by Chrissi Anderson
Uploaded via iPhone Application.Beach, Families, US
"Family on gameday!"
by Samantha - 4th year food science major
Family ready for the game!Current students, Families, Game day, On campus
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And I make my return with some good ol' fashioned horseplay! Started this 6 months ago then left it on stand by with one scene left and decided to finish it off today. Hope u enjoy it http://www.newgrounds.com/portal/view/638698
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Welcome Zoo, this is the human zoo.....
I'm on other forums as ZOOLANDER but apparently someone already has that username on here. Damn them. All well.
Welcome Zoo, this is the human zoo.....
"Poo"-lander? That doesn't sound right lol.
"Pick up the bar! that shit aint gonna lift itself!" M. Philp
Uncle - Z Sponsored Athlete
Welcome to the big leagues homie.
This probably one of the best welcomes I've gotten
Poolander is equally fine lol. Jk
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Lol, it could be worse.
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Welcome to the community.
Hello, poo bear. Welcome!
What up zooooooo
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Wedding Day Bliss
The historic houses and beautiful grounds of CarriageLaneInn are the perfect location for your upcoming wedding. Carriage Lane boasts a romantic wedding garden or intimate chandelier lit ballroom ideal for indoor wedding up to 150 guests. Our romantic garden is surrounded with magnolias, a backdrop of large shade trees, and a lovely border of flowers. A timeless arbor is the focal point, creating the ideal framework for ceremony. Our knowledgeable wedding coordinators can help you organize the wedding of your dreams. We provide in house catering. There is a wide variety of hors d' oeuvres, buffets, and plated options. We also offer menus for children and special dietary needs. Our exceptional staff prides themselves in providing outstanding service and presentation.
8 hour Saturday Wedding & Reception $2300- $3800
Wedding Packages
Luxury Package:
- 8 Hour Wedding
- Wedding Coordinator
- Use of the Wedding Garden
- Garden Lanterns
- 2 Fresh Floral Arrangements
- VIP Suite (Based on Availability)
- Valet Parking (100 guest minimum)
- Deluxe Bar Package
- House Centerpieces
- Minister
- Chair Bows
- Table Runners
- Cake Tables
- Cake Cutting
Your Special Day:
- 8 Hour Wedding
- Wedding Coordinator
- Use of Wedding Garden
- Garden Lanterns
- Discounted Use of VIP Suite
- House Table Centerpieces
- Cake Cutting
- Bartender (additional $300-$650)
- Minister (additional $200)
All for the Love of You:
- 5 Hour Wedding
- Wedding Coordinator
- Use of Wedding Garden
- Discounted Use of VIP Suite
- Cake Table
- Groom's Cake Table
- Bartender (additional $300-$650)
- Minister (additional $200)
At Carriage Lane Inn we also have 2 hour weddings, reception only, and wedding only packages available. We find it most benefical to set up an appointment with our experienced staff in order to tour the property and further discuss packages.


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The Gun Box Reader
A Collection of Extraneous Gunner Information
The files are loosely grouped under the headings below. Submissions may be made to RHQ RCA for possible inclusion.
~ The 1st Locating Regt RCA 1Apr 46 – 15 Mar 65 (Placed on the Supplementary Order of Battle) .
~ Vimy in 1916 and Vimy in 2010 (These are powerpoint slideshows, nice pictures.) .
Remembrance Day Aide-de-memoire 2014 (Gun Salute timing not correct see CANFORGEN). CANFORGEN on Remembrance Day Gun Salutes
~ TRAINING TO FIGHT AND WIN – TRAINING IN THE CANADIAN ARMY (Edition 2, May 2001) Brigadier-General Ernest B. Beno, OMM, CD (Retired) Foreword By – Brigadier-General S.V. Radley-Walters, CMM, DSO, MC, CD (Retired)
~ The Geoffrey Brooks Memorial Essay Competition Submissions 2010 .
Did You Know
~ Think you were working hard on your last live FTX or on your last tour? Think again. War diary entry for the 1st Canadian Siege Battery, 31 August 1917, "We fired 5,169 rounds this month, and for 23 days we only had 2 guns". They were firing 9.2 inch Howitzers in support of operations against Hill 70 and Lens. (Gunners of Canada, Vol 1)
~ The Guns of Kingston, by David Francis and Barry Porteous (1991). In and around the historic City of Kingston Ontario there are many Artillery pieces on display; here is a booklet containing details on them.
~ That The Royal Regiment of Canadian Artillery has the Older "brother" of the CFL's "Grey Cup" on display in The RCA Museum at the Home Station in Shilo, MB. Here is a great video recorded by TSN for the 2012 Grey Cup pre-game show.
"Remembering the Alamo", A series of articles written by Col P Williams on the Kabul Training Mission.
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~ New Calgary school named after fallen soldier Nichola Goddard
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~ RCA Posters – Which one do you like best? Poster # 1, Poster # 2, Poster # 3, Poster # 4, Poster # 5, or Poster # 6.
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~ Radio interview with Melanie Murray the aunt of Jeff Francis, who was killed along with five other soldiers by a roadside bomb in Afghanistan, she set out to tell the story of how his death affected his family. Her book is called For Your Tomorrow, The Way of An unlikely Soldier. The interview is part three at this link, www.cbc.ca/asithappens/episode/2011/06/08/wednesday-june-8-2011/
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~ A Newspaper Interview with a WWII 4th Light Ack Ack veteran, Bombardier George Skinner. He provides a really good snapshot of his war, a good read. De Nederlandse, 7 Mei 2011, Interview with a WWII Veteran.
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~ A You tube video on the 40mm Bofors Gun the that 4AD had decicated at the Juno Beach Centre this past summer. Juno Beach, 06 june 2011, 40mm Bofors Dedication
————————- ——————————– —————————- —————– .
15mins of Fame (Perhaps somewhat longer, it is the digital age)
– A New FOO talks about his first large FTX.
~ FORTISSIMO 2011 some good youtube videos, there are more on the right side – http://youtu.be/aIdQisaigtE
Fortissmo slide show – Courtesy of Jean Lapointe From the Col Comdt Fortissmo slide show 2
~ The Canadian Army from an American point of view http://www.archive.org/details/gov.archives.arc.2569680?start=1619.5
~ PoW Camp in Northern Manitoba – The RCA Museum partners with Universities to explore this fogotten part of WWII. A newspaper article from the thestar.com
– Canoe River Memorial 2010


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COLUMBIA CITY— Columbia City's girls golf team fell to visiting Warsaw at in the team's home-opener at Eagle Glen Monday.
The Lady Eagles shot 201 — 11 strokes behind the Lady Tigers.
Taylor Daniel paced Columbia City with a 43, two strokes behind Alexis Manwaring of Warsaw, who was the meet leader at 41.
Mackenzie Lane carded a 48 for the Lady Eagles, Allison Yoder and Cheyenne Johnson both shot 55 and Bethany Yoder rounded out the Columbia City varsity scoring at 56. For the season, the Lady Eagles are 0-3.
To read the rest of this story, see the Aug. 13 issue of The Post and Mail. Don't have a subscription? Call (260) 244-5153 or subscribe to our e-edition. For breaking news, sports updates and additional coverage, bookmark the homepage and find us on facebook and twitter.View more articles in:


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It's odd to be writing the final "Drance Numbers" post of the regular season. It feels like only just yesterday I was writing the first, a detailed post projecting the Canucks' likely offensive output back on October 6th, 2011. Looking back on that post, it seems uncannily prescient now:
So how many goals are the Canucks going to score this season? According to my detailed forecast: the Canucks should manage in the ball park of 247 Goals For in 2011/12. That total would have put them in the top five in both of the past two seasons. Though it represents an 11-goal regression from last season's league leading total, it should be enough to keep the team in contention for the top spot in the Western Conference.
With one game to play, the Canucks are sitting at 246 goals. So, barring an offensive explosion in game 82 (like we saw from the Canucks in 2009), my 247 projection is likely to be very close to the team's actual total.
While I'd like to claim to possess the powers of clairvoyance, that's demonstrably not the case, and anyway, there's only room in the Canucks blogosphere for one nostradamus figure.
But my October prediction is close enough that I'll enjoy a quick Homer dance (while the wall catches fire behind me).
Let's look briefly at the numbers and the methodology I used at the start of season. We'll evaluate where my work was legitimately dead-on, and where I just got lucky.
Not surprisingly, my educated guess began with some guess-work. At the outset, I tried to project how much ice-time each Canucks skater would receive at both even-strength and on the power-play. To do that, I used average ice-time based on the roles players played on the team over the past two seasons.
Here's what I got wrong: I didn't foresee Ryan Kesler or Mason Raymond returning from injury as soon as they did, I expected Tanev to play the entire season in Vancouver, and I didn't realize that Alain Vigneault would radicalize the deployment of his fourth line to the extent that he did. Vigneault also leaned more heavily on his top-three defenseman (Edler, Bieksa, Hamhuis) than he had in the two seasons prior.
In terms of what I got right, there isn't much, though I nailed Henrik Sedin's even-strength ice-time and got most of the first power-play unit ice-time dead on (though, I'd pencilled Mikael Samuelsson in to play 250+ power-play minutes for the Canucks this season).
I then went through three seasons worth of goals and came up with an "expected goals per sixty minutes" for each skater, based on that large sample. The numbers worked really well for calculating the even-strength scoring rates of the top-four defenders, and for most of the forwards. Several of the team's depth forwards (Chris Higgins, Jannik Hansen, Maxim Lapierre) outperformed their recent career scoring rates, while the team's offensive "stars" (Kesler, Alex Burrows and both Sedins) uniformly saw their G/60 rates fall off.
For what it's worth, considering the unique way he was deployed this season and the chatter over his regression as a player, Malhotra's goals per sixty rate this season wasn't substantially different from his recent career rate.
Generally my model's individual results were way off, though it did predict 28 goals for Alex Burrows. Henrik Sedin underperformed my projection the most, with only 13 goals (model projected 22), while Chris Higgins was the standout overperformer, exceeding my projection with 18 (model predicted 9).
My overall team predictions were much more successful: I had the Canucks scoring 57 power-play goals (they have 55), 178 even-strength goals (they've scored 176), 7 short-handed goals (the Canucks have 7) and 5 shootout winners (they've scored 8). That my friends, is some serious Rainman schtick.
How much credit can I really take for being "right" when I had the likes of Sturm and Samuelsson potting 37 combined? While there was doubtless a lot of luck involved here, numbers are powerful and if you combine them with some luck and some common sense, you can do astonishing things. For Gillis and Gilman, trusting the math has helped them to construct a perennial contender.
In my more humble case, numbers have merely helped me see the future.Tags: drance is a genius, drance numbers


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