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The basic rule that shall govern University Living is to respect the property and rights of others. Treat other people and their property, as you would expect yourself or your property to be treated.
A student is in violation of regulations when they are involved in any of the following:
- Possession or use of illegal drugs or narcotics;
- Possession, use, or in the presence of alcoholic beverages in the residence hall;
- Excessive noise and/or disturbance which infringes on the rights of others;
- Possession or use of weapons and/or explosives;
- Violation of escort/visitation policy;
- Misuse of residence hall services or property;
- Physical abuse, intimidation, verbal abuses or threats of violence;
- Failure to comply with the reasonable directions of University officials, including residence life staff, acting the performance of their duties;
- Use of the roof or ledge of the hall;
- Misuse of common area furniture;
- Theft or possession of stolen goods, including street signs;
- Malicious destruction, damages or misuse of private, public or University property;
- Breaking the peace or contributing to the breaking the peace;
- Lewd, indecent or obscene conduct or expression;
- Solicitation in the residence hall without approval from Student Life;
- Possession of pets;
- Removal of window screens;
- Failure to honor decisions of judicial authority or giving false testimony to a judicial board;
- Skating, skateboarding, bicycling or roller-blading in the hall;
- Behavior that threatens the safety of others;
- Violation of policies that a student has reasonable access to, such as this guide, the Student Housing Contract and the policies outlined in the Code of Student Rights and Responsibilities.
Specific Policies
Off-Campus Housing Policy
When demand for campus housing exceeds capacity, students who meet the following criteria may be considered for lodging in University-leased, off-campus lodging.
- Sophomore classification
- 2.50 cumulative GPA required; 3.00 cumulative GPA preferred
- No disciplinary violations
All students who meet these criteria will be interviewed by the coordinator of student life staff for selection and final recommendation to the dean of student services.
Air Conditioners
To reduce the cost of maintaining the building, students are asked to turn off their air conditioners and heaters when the temperatures are between 55 to 75 degrees Fahrenheit. The air conditioners can freeze up if the windows are left open and the air conditioners are being run. Please give your air conditioner a break occasionally and let it thaw out.
Alcoholic beverages are not permitted on University property, which includes the hall. All alcohol confiscated from a resident will be disposed of by the resident in the presence of residence life staff.
Due to the possibility of breakage and the potential for injury ball playing is not permitted in the residence hall. Ball bouncing is also not allowed because of noise.
Common Area Damage
In situations where responsible parties can not be determined all residents will be charged for damages to common areas, such as hallways, the recreation room and stairways.
Controlled Substances
The use, possession or distribution of any illegal substance in or around the residence hall is prohibited and will result in West Plains Police involvement.
Courtesy Hours
Students are asked to extend courtesy to their fellow residents. Please extend courtesy to residents. If they ask you to turn something down please do so. At no point should your stereo or television be heard more than one door down.
Darts and Dartboards
Due to the potential personal injury and property damage, darts and dartboards are not permitted at any time in the residence hall.
Electrical appliances
No open coil appliance should be in the residence hall. If you have a question ask the Coordinator.
Escort Policy
For safety's sake residents must accompany guests wherever they go in the hall. You are responsible for the actions of your guests during their stay.
For safety's sake and for peace and quiet no fireworks or other explosives are allowed in the residence hall or around it.
Fire Alarms and Equipment Abuse
The fire alarm system, fire extinguishers, exit doors, sprinkler system, and lights are installed for the residents' protection. Tampering with fire equipment including smoke detectors, and sprinklers, can result in civil prosecution, disciplinary measures and/or possible fines.
The University regards false fire alarms and arson as serious threats to the well being of the residence hall community. Reflecting this priority, rewards are paid to individuals assisting in the conviction of persons tampering with the fire alarm system and/or those involved in arson activities.
A $100 reward shall be paid to an individual(s) providing information that leads to the conviction in the campus judiciary system or in a court of law of a person(s) guilty of turning in a false fire alarm or activating the sprinkler system on the university campus.
A $100 reward shall be paid to an individual(s) that leads to the conviction in the campus judiciary system or in a court of law of an individual(s) responsible for arson activities on the University campus.
Fire Doors
The fire doors at either end of the hallway are considered part of the fire safety equipment of the residence hall. Improper propping or rigging of the door to prevent it from closing is a direct violation of University policy.
Flammable Fluids/Chemicals
Use of storage of flammable fluids and/or chemicals is prohibited.
All guests shall be registered with the coordinator. No guest shall stay over 2 days and the visitation policy should be followed during the stay of the guest.
The University prohibits acts of hazing. Hazing includes any act that puts a student in mental, physical, or emotional danger. At no point should a student feel unsafe during any initiation ceremony or at any activity of the University. Students may contact the office of student life, for further information about this policy.
Insurance Coverage
The University cannot be responsible for any damage or loss of property due to fire, facility failure, theft, severe weather or other acts of nature. Students are, therefore, encouraged to carry their own personal property insurance.
To replace burned out light bulbs, contact a resident assistant so a work order can be submitted for replacements. Also, to reduce the electrical usage you are asked to turn off your electronic items when you are not using them.
Maintenance and Damages
The University employs staff to keep the residence hall in good working order. Any requests for maintenance should be taken to an RA or the coordinator.
Any damages that occur during the year should be reported to the RA or coordinator. Damages will be assessed at the end of the year and charged to the student. Damages to common areas will be charges to all residents if a responsible party can not be determined.
Offensive Odors and Open Flames
Candles and incense are not to be burned in the residence hall.
Only animals that can survive under water for 24 hours, i.e. fish are allowed in the hall.
Posting Policy
There are bulletin boards in the residence hall. The coordinator must approve all postings. Materials must be taken to the office from 8 AM to 5 PM, Monday through Friday, to obtain approval for the posting. Residence Life staff will then post approved materials.
Room Decorations
General Guidelines
- Nails, screws, foam backed, double-stick or duct tape on or in the walls, furniture, or fixtures are prohibited. Only masking tape or poster putty are to be used to hang posters and other decorations;
- All furniture must stay in the assigned room/suite;
- A receipt must accompany Traffic/street signs if a student wished to hang them in his/her room;
- Pictures that could be considered objectionable must not be visible outside a student's room (alcohol posters, nudity, etc.);
- Alcohol or other can collections are not allowed in the residence hall;
- No candles or open flames are allowed;
- You may not cover an entire wall with decoration, as it is a fire hazard.
Holiday Decorations
- All the above rules apply for holiday decorations.
- All materials used must be flame-resistant.
- Trees and other greenery must be artificial.
- Lights must be UL-approved and of low wattage.
Room Entry
The University respects a student's right to privacy. University staff may enter a resident's room for any of the following conditions:
- To provide room maintenance inspections or repair service.
- To conduct periodic trash or health inspections
- When there is reasonable cause to believe that University regulation or laws are being violated.
- When there is reasonable cause to believe an emergency situation has arisen that requires that the room be entered.
- When a resident permanently vacates the room.
- When a resident vacates a room for a break period, authorized personnel may enter a room to provide room maintenance inspections, repair service or trash and safety inspections.
Illegal materials in plain view may be confiscated if they are noticed in the course of inspections or in response to violation of University or departmental policy. The resident will receive written notification of this action if confiscation is required.
A student's room will never be entered without knocking. A sufficient lapse of time will be given for the student to answer the door. Before entering a room with the use of a key, staff members will identify themselves.
Room Modifications
Talk to the Coordinator about painting or other modifications.
Telephone Harassment
Telephone harassment includes, but is not limited to, annoying, abusive or obscene phone calls designed to irritate, anger or threaten a listener. Such harassment is in violation of University and housing policy. Students found responsible for or associated with the harassment of a resident are subject to University and residence hall disciplinary action.
Students receiving harassing phone calls should notify an RA or other staff immediately.
Threats to Community Safety and Security
No student shall engage in any activity that compromises the safety of property or the safety or well being or another member of the University community or their property. The following are defined specifically as dangerous practices in a residential community:
- Propping open doors or permitting unauthorized access to the building by persons not in possession of a key.
- Providing keys to any person other than the individual to whom the keys have been assigned.
- Entering restricted areas such as the roof.
- Tampering with safety equipment, such as elevators, fire equipment, exit signs or other such notices.
- Possession, use or storage of flammable materials, open coil devices, or open flames.
- Throwing objects, including but not limited to, bottles, cans, food, trash, water balloons and balls in or from the hall.
- Removal of screens.
- Group activities that may lead to injury or destruction of property.
Tobacco Policy
Smoking and the use of smokeless tobacco are prohibited on campus and at all University activities.
Visitation Policy
Residents of the hall may have guests visit them in the hall. This is provided that it does not cause problems with the roommates or suite-mates. Visitation hours for the residence hall are:
Sunday – Thursday
8 AM – 10 PM for non-residents
8 AM - 12 Midnight for residents
Friday and Saturday
24 hour visitation
During these times guests may be of either sex. At times other than these only same sex guests will be allowed. Overnight guests of the same sex may stay once the resident has notified the coordinator.
Waterbeds are not allowed in the residence hall.
Weapons such as firearms, BB guns, ammunition, bows and arrows, and knives for other than cooking and kitchen purposes are prohibited in the residence hall due to the inherent danger.
Windows and Screens
For safety purposes residents must follow the below policies:
- Residents may not remove the screens from their room window or other residence hall windows at any time, nor take any action that may tend to damage the window, screens, tracks or closures.
- Residents are instructed not to lean against any window or to stand upon any structure(s) or item(s), such as heating unit, crates or books in front of any window in the residence hall.
- No objects may be thrown, dropped, pushed out of, placed outside of or allowed to fall from any residence hall window.
- No one is permitted on ledges, nor are items to be placed on ledges.
Due to the severity of this safety concern, the office of student life and development will hold the resident of the room responsible for any damage to any part of the window and the students will be assessed a $100 fine.


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|Terry Ray Brown
|Friday, 30 May 2014 13:03
Terry Ray Brown age 47 of Cave City, passed away Thursday, May 29, 2014 at the Medical Center of Bowling Green. Terry was born in Frankfort, Indiana, former employee of Dart Container and an auto parts salesman. He was also a volunteer firefighter for the Horse Cave Fire Department, enjoyed fishing, working on motor vehicles and attended Immanuel Ministry Church.
Survivors include his fiance, Suzette Kumba of Cave City, 4 children, Cayla Wagner of Kokomo, Indiana, Joshua Brown of Cave City, Jaron Brown of Kokomo, Indiana and Summer Brown of Cave City, 6 grandchildren, 3 sisters, Debby Schneider and husband Kenny of Munfordville, Sheila Cole and husband Phillip of Tennessee and Sandra Shirrell of Greenwood, Indiana, 3 brothers, William Thomas Brown and wife Patricia of Cave City, Danny Lee Brown and Thomas Jesse Brown and wife Christal of Rossville, Indiana and several nieces, nephews, aunts, uncles and cousins.
He was preceded in death by his parents, Harvey Thomas Brown and Everee Harper Lane and a sister, Diana Brown.
Funeral service will be conducted 1:00 p.m. Monday, June 2, 2014 in the chapel of Winn Funeral Home with burial in the Horse Cave Municipal Cemetery.Visitiation 11:00 a.m. - 1:00 p.m. Monday at the funeral home.

subset: commoncrawl


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A semiconductor integrated circuit structure and method of fabrication is disclosed. The structure includes a FET gate with adjacent double or triple layered gate spacers. The spacers permit precise tailoring of lightly doped drain junction profiles having deep and shallow junction portions. In addition, a self-aligned silicide may be formed solely over the deep junction portion thus producing a reliable low contact resistance connection to source and drain.
1. A method of semiconductor integrated circuit fabrication comprising:
forming a gate stack over a substrate, said gate having a first overlying nitride layer;
forming a first oxide layer upon said gate stack and selected portions of said substrate;
depositing a second layer of nitride upon said first oxide layer;
depositing a second oxide layer upon said second nitride layer;
etching said second oxide layer to form a first spacer;
etching said second nitride layer to form a second spacer underlying said first spacer; said first nitride layer remaining upon said gate stack.
2. The method of claim 1 further including the steps of forming at least two junctions in said substrate;
depositing a conductive material upon said substrate and upon at least one gate stack, said gate stack having said first nitride layer upon it, said conductive material contacting both of said junctions;
patterning said conductive material.
3. The method of claim 2 wherein said conductive material is chosen from the group consisting of polysilicon, aluminum, tungsten, titanium, tantalum, metal silicide, or molybdenum.
4. The method of claim 1 which said step of forming a gate stack includes:
growing an oxide layer upon said substrate;
depositing a polysilicon layer on said oxide layer;
depositing a nitride layer upon said polysilicon layer; and
etching said oxide layer, said polysilicon layer, and said nitride layer to form said gate stack having an overlying nitride layer.
This application is a continuation of application Ser. No. 07/692,860, filed on Apr. 29, 1991, now abandoned, which is a continuation of application Ser. No. 07/422,834, filed Apr. 17, 1989, now U.S. Pat. No. 5,153,145.
This invention relates to integrated circuits and, more particularly to integrated circuits with field effect transistors (FETs) and methods for making same.
Those concerned with the development of integrated circuit technology have continually sought to develop structures and methods of fabrication which will increase circuit packing density, circuit performance, and improve process yields.
For example, some designers of submicron MOSFETs have employed a so-called lightly-doped drain structure (LDD). The LDD structure features a shallow junction near the device gate and a deeper junction spaced more remotely from the gate. The shallow junction helps to avoid punch-through and short channel effects. However, the shallow junction exhibits a high sheet resistance and therefore may, taken alone, adversely affect device performance.
Various approaches to LDD technology have been investigated in the past. Among them are: Pfiester, "LDD MOSFETs Using Disposable Side Wall Spacer Technology," IEEE Electron Device Letters V. 9(4), p. 189-192 (1988) and Oh et al., "Simultaneous Formation of Shallow-Deep Stepped Source/Drain for Submicron CMOS," VLSI Technology Symposiums p. 73-74 (1988).
Some of the above-mentioned publications feature the use of silicide processes in an attempt to reduce the high sheet resistance problems mentioned above. However, an examination of the published processes reveals various practical difficulties with their implementation.
Whether or not an LDD structure is employed, various other problems may occur during device processing which may subsequently degrade integrated circuit performance. For example, various steps associated with silicide processes may cause either damage to the silicon substrate surface or may contribute to shorting between the source/drain and gate.
Another problem confronting integrated circuit designers is the need to interconnect individual transistors with increasingly complex interconnection schemes. Designers frequently employ gate-level local interconnection schemes. However, if it is either necessary or desirable for a local interconnection line to cross over a gate runner, care must be taken to prevent electrical contact between the gate runner and the local interconnection line. Those concerned with the development of integrated circuits have consistently sought processes which will solve the above and other problems.
The present invention provides for a field effect transistor with a gate stack formed upon a semiconductor substrate. During fabrication, three material layers are formed over the gate stack and upon the substrate. At least the outer two material layers are sequentially anisotropically etched, creating two spacers adjacent the gate stack (and gate runners).
The spacers perform a variety of useful functions in various alternative embodiments of the invention. For example, in one embodiment, the spacers may facilitate creation of LDD junction profiles, the spacers serving to mask potions of the substrate while partial junctions are formed. The spacers simultaneously facilitate the formation of a self-aligned silicide contact over only the deep portion of the LDD junction. The self-aligned silicide-over-deep junction structure has a desirably low sheet resistance.
In another embodiment the gate stack and runners are covered with a dielectric layer. At least one spacer together with the dielectric layer serves to insulate the runner so that local conductive interconnection may extend over the runner without risk of shorting.
The spacers perform a variety of other useful functions in various embodiments. For example, one of the spacers may be chosen from a material which is impervious to migration of metal from silicide contacts over source/drain regions to the conductive portion of the gate. Such migration has been observed through conventional spacer arrangements and has contributed to shorting of the gate to the source/drain. Other advantages of the invention are discused below.
FIGS. 1-15 are cross-sectional views depicting illustrative processing sequences for fabricating various embodiments of the present invention.
The inventive concept may be best understood by a discussion of the various procedures which may illustratively be utilized to fabricate the inventive device.
FIG. 1 generally shows a representative cross-section of a potion of a wafer during initial steps of typical fabrication. Reference numeral 11 denotes a substrate which may typically be silicon or epitaxial silicon. Reference numeral 13 denotes a potion of a field oxide, while reference numeral 15 denotes a gate dielectric layer which is typically an oxide. Reference numeral 17 denotes a layer conductive material which may be, for example, polysilicon. Typical thicknesses for layers 15 and 17, respectively, are 100-200Å and 2500-4000Å, respectively.
Turning to FIG. 2, layers 15 and 17 have been patterned by methods known to those skilled in the art to create FET gate stack designated by reference, numeral 18. Next, another oxide layer 19 is formed, as illustrated in FIG. 3. Oxide layer 19 is desirably a thermal oxide, such as one grown at approximately 900� C. in oxygen. However, a deposited oxide might also be used. It will be noted that oxide layer 19 surrounds gate 18, covering sides 20 and 22 and top 24 of gate 18. A typical thickness for oxide layer 19 is 150-250Å. Layer 19 is desirably as thick as or thicker than gate oxide 15. Generally a thermal oxide is preferred because of its low interface trap density. Next, dielectric layer 21 which is typically silicon nitride or silicon oxynitride is deposited. An exemplary thickness for layer 21 is 150-400Å.
Finally, layer 23 is deposited upon layer 21. Layer 23 may desirably be a deposited oxide of silicon. Such an oxide may be formed from silane or by decomposition of a variety of organometallic precursors such as tetraethoxysilane, (known by the acronym "TEOS"), or diacetoxy-ditertiarybutoxysilane (known by the acronym "DADBS"), or tetramethylcyclotetrasilane known by the acronym "TMCTS" and sold by J. C. Schumacher, a unit of Air Products and Chemicals Inc., under the trademark "TOMCATS." Layer 23 may be doped, if desired, with boron or phosphorous. An exemplary thickness for layer 23 is 800-4000Å. Alternatively, layer 23 may be polysilicon.
In FIG. 4, layers 23, 21, and 19 have been anisotropically etched in sequence. The figure shows gate stack 18 surrounded on sides 20 and 22 by the nested remnants of layers 23, 21, and 19. For convenience in the following discussion each of the above-mentioned remnants will be termed a "spacer." However, it should be noted that spacers 19 and 21 (which are nested beneath spacer 23) have a generally "L-shaped" appearance (in cross-section). Spacer 23 has a generally rounded outer contour resembling a fillet. Of course, in actual practice the rounded contour of spacer 23 may become somewhat distorted by various processing procedures. Similarly, "L-shapes" of spacers 19 and 21 may become somewhat distorted, producing tilted spacers with slightly irregular sides or other irregularities. However, in general, the anisotropic etching procedures in current common use will produce a nested set of spacers, the inner two 19 and 21 having comparatively flat sides and the outer are 23 having a rounded or curved outer surface.
The presence of layer 21 between layers 23 and 19 makes it possible to fairly precisely control the etching of layer 19 to avoid over-etching and damage to substrate surface 26. For example, if layer 23 is BPTEOS, layer 21 is silicon nitride, and layer 19 is thermal oxide, it will be found that layer 21 serves as an etch step against the etching of layer 23. Once layer 21 is reached, the artisan is on notice that the remaining two thin layers must be etched with care.
It may be considered desirable to protect the surface 26 of substrate 11. If protection for surface 26 is desired, then layer 19 need not be etched at this juncture. Of course, if layer 19 is not etched, only two spacers 21 and 23 will be formed and layer 19 will overlie surface 26. (For convenience, FIG. 4 shows layer 19 etched to form a spacer.)
Layer 19 is, as mentioned before, desirably a thermally grown oxide. The oxide exhibits a low interface trap density and serves as a stress relief buffer for overlying layer 21. (Typical silicon nitride films, such as that recommended for layer 21, may exhibit considerable stresses.) Thus layer 19 prevents high stresses in layer 21 from distorting substrate 11.
Now that formation of a nested double or triple layer spacer has been described, a variety of applications of the inventive structure together with alternative embodiments and their advantages will be described.
FIGS. 5-7 illustrate how the inventive concept may now be utilized to form a lightly-doped drain structure. Referring first to FIG. 5, an ion implantation step, shown schematically by species denoted by reference numeral 31 is performed to form deeply-doped junctions 25 and 27. The appropriate ion species 31 is determined by whether an NMOS or PMOS device is to be formed. Of course, should a CMOS pair of devices be desired, photoresist 29 is deposited upon that portion of the structure which must be shielded from the implantation species 31. It will be noted, as illustrated in FIG. 5, that gate 18 flanked by spacers 19, 21, and 23 effectively mask portions 28 and 30 of substrate 11 from implantation species 31. (If layer 19 has not been etched, it may serve to protect surface 26 during the implantation step. Spacers 21 and 23 will still serve as protective masks for regions 28 and 30.)
A variety of other techniques may be utilized to form junctions 25 and 27. In each case spacers 21, 23 (and spacer 19 if formed) will mask portions 28 and 30 of substrate 11. For example, a variety of gaseous and solid diffusion techniques known to those skilled in the art may be employed to form junctions 25 and 27.
Next, as illustrated by FIG. 6, spacers 23 are removed in anticipation of formation of the shallow portion of the device junctions. If spacers 23 are made from undensified TEOS or even densified TEOS or BPTEOS, they may be etched much more quickly than field oxide 13 or any protective oxide (such as layer 19 or another regrown oxide layer) which may cover deep junction 27. For example, using a 15:1 HF etch, the etch rate for thermal oxide is approximately 200Å per minute, while for undensified TEOS the etch rate is approximately 1400Å per minute and for phosphorous doped TEOS, 20,000Å per minute. If spacer 23 has been made from polysilicon, it may be removed by plasma etching. (However, if material 17 is also polysilicon, it will also be attacked by the plasma etching process. Consequently, it is desirable that there be a protective layer such as silicon nitride material 17 if spacer 23 is polysilicon. The use of various layers, such as silicon nitride over the gate stack is discussed in greater detail in subsequent paragraphs.)
After spacer 23 has been removed, a second implant using ion species 37 shown in FIG. 6 is performed. The second implantation species must penetrate the "foot" of spacers 21 and 19. The foot serves to absorb some of the ionic species, thus creating shallow junction regions 33 and 35 in potions 28 and 30 of substrate 11. Proper tailoring of the implant energy and dosage and the thickness of the feet of layers 21 and 19 permits the achievement of carefully controlled shallow junctions 33 and 35.
If a CMOS pair is being formed, photoresist 29 may be stripped, a new photoresist may be positioned over the already-formed device depicted in FIG. 6 and the complementary device formed by similar steps.
Next, as illustrated in FIG. 7, a thermal drive-in may be performed. Other techniques such as laser heating may also be employed to remove implant damage and activate the dopant species. Next, if desired, a self-aligned salicidation (salicide) may be performed. FIG. 9 illustrates the structure of FIG. 7 after a salicidation step has been performed. Typically, a metal such as titanium, tantalum, molybdenum, or tungsten is blanket-deposited over the structure depicted in FIG. 7. Then the structure is heated by methods known to those skilled in the art, causing the metal to react preferentially with underlying silicon, forming silicide regions 51, 53, and 55, respectively, above junctions 25 and 27 and gate 18. The unreacted metal which may cover, for example, spacer 21, is subsequently easily washed away.
At this juncture, it is worthwhile to note several advantages of the structure depicted in FIG. 9 and formed by the sequence of steps in FIGS. 1-7. Silicide regions 51 and 53 are self-aligned with respect to the deep junctions 27 and 25, respectively. For example, silicide region 51 covers all of the deep junction 27 but does not cover the shallow junction 35 (due, of course, to the presence of layers 21 and 19). It is undesirable for silicide region 51 to extend over the shallow junction 35 because leakage from the shallow junction to the substrate will be dramatically increased. The leakage will be caused by tunneling induced by asperities in the bottom of the silicide layer through the depletion region between the lightly doped area such as 35 and substrate 11. Another difficulty caused by formation of silicides upon lightly doped regions such as region 35 is that specific contact resistivity is likely to increase at the interface between the silicide and the doped silicon. The increased resistivity is due to the light doping at the interface between the silicide and the doped silicon.
The inventive process may be contrasted with the process discussed in Oh et al. mentioned above. The Oh et al. process employs two layers (oxide followed by nitride) after gate formation. A nitride spacer is formed which serves to define the limits of an underlying oxide spacer. The nitride spacer is removed, leaving only a single oxide spacer prior to junction formation. The oxide spacer serves to screen some of the incident ion species during ion implantation, thus forming a one-stop LDD junction. However, the Oh et at. process does not admit the use of a protective oxide layer (such as layer 19) over the entire silicon surface to protect against implant damage. Furthermore, applicants' two-step junction formation procedure allows more precise tailoring of the junction profiles. In the Oh et al. process, a subsequent additional CVD spacer must be formed prior to silicide formation. However, it is not possible to precisely align the CVD spacer with the initial oxide spacer (which defines the edge of the deep portion of the junction) and consequently the silicide contact cannot be precisely aligned with the deep junction edge.
By way of further comparison, applicants' process presents various advantages over the process mentioned in the Pfiester article mentioned above. In particular the Pfiester article shows a single spacer with rounded sides to separate two separate implantation doses, thus creating an LDD structure. By contrast, applicants' invention permits the formation of deep and shallow junction regions by implantation through two different thicknesses of dielectric. Consequently, very precise tailoring, of the final junction profile is achievable with applicants' invention. Furthermore, the Pfiester article does not mention silicidation. If silicidation were attempted with the Pfiester, there is no method for self-aligning the silicide with the deep junction.
Furthermore, the inventive structure possesses yet another set of advantages over conventional transistor structures and processes. These advantages are enumerated below:
The present invention requires less masking than conventional LDD processes. Typical CMOS LDD fabrication requires three or four masks. However, the present invention requires only two masks (one mask covering the p-substrate while the n-substrate is being processed and vice versa) to form a CMOS LDD structure.
The present invention helps to prevent shorting between source/drain silicide and the gate. It has been found that certain metals such as titanium (commonly used in silicidation of source/drain contacts) may tend to migrate through TEOS-type spacers toward the gate and cause shorting between the source/drain and the gate. However, the present invention helps to eliminate this failure mode because spacer 21 (which is typically silicon nitride or silicon oxynitride) forms a protective shield or barrier against metal migration.
Another important advantage of the present invention is that layer 21 may help prevent the migration of other types of particles into the gate stack. In particular, it has been found that some devices fabricated without layer 21 may experience various failures during burn-in. Some failures are believed due to the migration of silicon particles through conventional silicon oxide gate spacers. The silicon particles may cause shorting of the gate to the source/drain. The present invention helps to eliminate this failure mode when spacer 21 is a material which forms a shield or barrier against silicon migration, such as silicon nitride or silicon oxynitride.
When the present invention is compared to structures which utilize a single silicon oxide spacer, another advantage is manifested. The anisotropic etching process which is used to create a single silicon oxide spacer is frequently carried out beyond nominal completion, i.e., over-etching is performed. The over-etching frequently creates trenches in the field oxide. A trench may occur at the edge where the field oxide contacts the source/drain junction (i.e., where the oxide bird's beak meets the doped silicon surface). The trench exposes some of the undoped silicon substrate.
Unfortunately, a subsequent salicidation process creates an electrical short circuit between the junction and the exposed silicon in the trench via the salicide. The present invention helps to avoid the over-etching problem because layer 21 serves as an etch step during etching of layer 23. When layer 21 is reached, the artisan is on notice that further etching must be done with care. (Another type of over-etching which may be avoided by the present invention is trenching which may occur in a field oxide between two runners which overlie the oxide. The trenching may exaggerate the aspect ratio of the space between the runners and makes subsequent dielectric coverage difficult Again, the presence of layer 21 which may serve as an etch-stop helps to prevent the over-etching and trenching problem.)
Although application of the inventive concepts has been discussed so far chiefly in connection with formation of a lightly doped drain (LDD) structure, the inventive concept may also be applied to devices which do not require a lightly doped drain. An example of such application is provided by FIG. 8. The structure depicted in FIG. 8 is obtained after the structure depicted in FIG. 4 is fabricated. The structure of FIG. 8 is produced by an ion implantation step and drive-in applied to the structure of FIG. 4. Examination of FIG. 8 shows source and drain regions 41 and 43 formed beneath gate stack 18 which is flanked by layers 19, 21, and 23. It will be noted that layer 23 need not be removed from the structure depicted in FIG. 8 because there is no need for a lightly doped junction.
Another application of the inventive concept is depicted in FIGS. 11-15. FIG. 11 is a cross-sectional view of a portion of a semiconductor wafer during typical initial steps of fabrication. Substrate 111 may be silicon or epitaxial silicon. Field oxide 113 is formed upon substrate 111. Gate oxide 115 is formed overlying substrate 111. Layer 117, which may be typically polysilicon, is formed aboved layer 115. Layer 118, which may be silicon nitride or silicon oxynitride, covers layer 117. Layers 115, 117, and 118 are formed typically during initial steps of semiconductor wafer fabrication. Comparison of FIG. 11 with FIG. 1 reveals that an extra layer (layer 118) has been deposited in FIG. 11 and is absent in FIG. 1. Typical thicknesses for layers 115, 117, and 118 are 100-200Å, 2500-4000Å, and 1500-3000Å, respectively.
Turning to FIG. 12, it may be noted that layers 118, 117, and 115 have been patterned to produce gates 201 and 205 together with runner 203 which extends over field oxide 113. Thus, it will be noted that FIGS. 12-15 depict the formation of two adjacent transistors separated by field oxide 113. Furthermore, gate level runner 203 extends along field oxide 113. Gate level runner 203 may be connected (although not shown in the particular cross-section of FIG. 12) to gate 201 or 205 or to the gate, source, or drain of some other transistor (not shown).
In FIG. 13 layer 119, which may be silicon dioxide, is formed on substrate 111. Next layer 121 is deposited. Layer 121 may be silicon nitride, or silicon oxynitride. Layer 123 is deposited upon layer 121. Layer 123 may be formed from TEOS, or BPTEOS, or any of a variety of other deposited dielectrics. Typical thicknesses for layers 119, 121, and 123 are similar to the thicknesses for aforementioned layers 19, 21, and 23 in FIGS. 1-7.
Next, in a manner analogous to that depicted in FIGS. 4-10, layers 123, 121, and (optionally) 119 are anisotropically etched to create spacer layers 119, 121, and 123 illustrated in FIG. 14. Some/drain regions 300, 301, and 302 may be formed in a manner similar to that discussed before. Although FIG. 14 shows the shapes of junctions 300, 301, and 302 to have standard profiles, lightly doped drain (LDD) profiles may be created, if desired, by the process discussed in connection with FIGS. 5-7. Should salicidation be desired over source/drain regions 300, 301, and 302 it may also be performed in a manner analogous to that depicted in FIG. 9. Therefore it should be apparent that although FIG. 14 depicts spacer layer 123 adjacent gates 201 and 205 and runner 203, layer 123 would be removed if a lightly doped drain structure were created. Furthermore, examination of FIG. 14 shows that gates 201 and 205, unlike the gates of FIGS. 3-10, has an overlying protective nitride layer 118. Furthermore, gate runner 203 has a similar overlying protective nitride layer 118'. Thus it can be seen that the structures depicted in FIG. 14 have at least two protective layers flanking the gate and have an overlying protective nitride layer.
Also depicted in FIG. 14 is an overlying conductive layer 170. Layer 170 may be polysilicon, aluminum, gold, tungsten, metal silicide, or any other conductive material.
In FIG. 15 layer 170 has been patterned. The remaining portion of layer 170 connects source/drain region 300 to source/drain region 301. Patterned layer 170 extends over gate runner 203 without electrically contacting it. The presence of protective nitride layer 118 together with nitride layer 121 which flanks runner 203 prevents electrical contact between patterned layer 170 and the conductive polysilicon heart 117' of runner 203. (It will be noted that even fillet-like layers 123 have been removed as would occur during the fabrication of an LDD structure, electrical contact between patterned layer 170 and polysilicon 117' is still prevented by spacers 121 and 119.) Thus, the inventive structure has facilitated the formation of a sub-gate level interconnection between junction regions of different transistors (i.e., a connection formed prior to passivation dielectric deposition and contact window opening) without the possibility of shorting to a gate runner.
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A method and apparatus for inserting source identification data into a video signal prior to its transmission, recording or display. The source identification data (Finger Print) is injected into the active picture area of a video signal without disturbing the viewing of the video signal and the data is retrieved by a data reader, called a Fingerprint Reader. The data injection or "fingerprinting" process consists of dynamically offsetting the video pedestal to carry information which can then be read back from any videotape made from the output of the data-injecting unit. In particular, the fingerprint carries the ID number of the unit used and the current date. The offset lasts for one entire field and has an amplitude of approximately 0.5 IRE-- that is, a given field either has the nominal setup or a setup value differing from nominal by 0.5 IRE. The data is repeated every 128 fields in order to provide ample samples for the reader to detect and display the source identification data.
1. An apparatus to incorporate source identification data into a video signal comprising:
a video processor having a video input signal, wherein said video input signal is coupled to a sync separator;
said sync separator generates a vertical triggering pulse, wherein said vertical triggering pulse is coupled to a data modulator;
source identification data is inputted to said data modulator;
said data modulator generates a serial data stream comprising a sync word and said source identification;
horizontal and vertical blanking pulses are generated in said video processor and coupled to a data blanker;
said serial data stream is coupled to said data blanker wherein said serial data stream is blanked during horizontal and vertical blanking intervals of said video input signal to create a blanked data signal: and
said blanked data is combined with said video input signal.
2. An apparatus as in claim 1, wherein said source identification data comprises data identifying a source of said video input signal and a date and time stamp.
3. An apparatus as in claim 2, wherein said source comprises a specific theater displaying said video signal.
4. An apparatus as in claim 2, wherein said source is a specific video cassette duplicator or recorder that originally recorded said video signal.
5. An apparatus as in claim 1, wherein said sync word is preprogrammed into a read only memory.
6. An apparatus as in claim 1, wherein said sync word is generated by a user controlled keyboard or keypad.
7. An apparatus as in claim 1, wherein said video processor is part of a video projection system.
8. An apparatus as in claim 1, wherein said video processor is part of a video recording system.
9. An apparatus to incorporate source identification data into a video signal comprising:
said video signal is inputted to a means for processing a video signal;
said video signal is also inputted to a means for generating a vertical triggering pulse;
means for providing a sync word;
means for providing source identification data; said vertical triggering pulse, said source identification data said sync word are inputted to a means for data modulation to produce formatted finger print data;
inputting said finger print data to a means for blanking said formatted fingerprint data during video blanking intervals;
inputting said blanked formatted fingerprint data to a means for coupling said blanked formatted fingerprint data to said video signal.
10. A method for incorporating source identification data to the active picture of a video signal comprising the steps of:
inputting a video signal;
detecting a vertical trigger pulse from said video signal;
generating blanking signals from said video signal;
generating source identification data;
generating a sync word;
coupling said vertical trigger pulse, said source identification and said sync word to a data modulation means to generate a formatted finger print signal;
using said blanking signals to blank said formatted fingerprint signal during blanking intervals of said video signal;
combining blanked fingerprint signal with said video signal.
A portion of the disclosure of this patent document contains material that is subject to copyright protection. The copyright owner has no objection to the facsimile production by any one of the patent disclosure, as it appears in the Patent and Trademark Office files or records, but otherwise reserves all copyright rights whatsoever.
With video piracy becoming more rampant by the day, it is becoming more desirable to have a method for identifying whether a video recording or video transmission is originating from an authorized source. Source or tape identification processes using the data transmission capability of the vertical interval have been known to those skilled in the art. However such system suffer from the ease of eliminating the source identification data by blanking and reinsertion techniques. The source identification or "fingerprint" systems known do not transmit the data during the active time of the video signal.
One form of video piracy has been to use a video camera to record the picture and sound off the screen and speakers in a theater displaying a movie. Admittedly this method produces a very inferior copy. However, in certain parts of the world, generally outside of the United States, such a copy is acceptable. The use of video movie projection systems in theaters is becoming more popular. Generally, these systems incorporate a form of video scrambling to protect the electronic video signals prior to projection. However, vertical interval source identification and video scrambling do not protect the projected image once the signal has been descrambled.
A method of source identification of movie and other material is needed to provide a source code to reduce the likelihood of illegal copying and if such copying is done, identify the theater or source of the duplication.
A method and apparatus for the injection of data (Finger Print) into the active picture area of a video signal without disturbing the viewing of the video signal and the retrieval of the data by a data reader, a Fingerprint Reader. The data injection or "fingerprinting" process consists of dynamically offsetting the video pedestal to carry information which can then be read back from any videotape made from the output of the data-injecting unit. In particular, the fingerprint carries the ID number of the unit used and the current date. The offset lasts for one entire field and has an amplitude of approximately 0.5 IRE units. A given field either has the nominal setup or a setup value differing from nominal by 0.5 IRE unit. The reader detects the finger print data from the video signal and process the data for display. From this data the source of the video information can be determined such as a specific theater and date the video material was played. Another application may be to include such source data at the video when recorded.
FIG. 1 is a block diagram of the data insertion apparatus; and
FIG. 2a-2e is a series of wave forms representing sync word;
FIG. 3 is a block diagram of the Fingerprint Reader.
The data injection or "fingerprinting" process consists of dynamically offsetting the video pedestal to carry information which can then be read back from any videotape made from the output of the data-injecting unit or from a video tape of a screen display of a signal containing the data. In particular, the fingerprint carries the ID number of the unit used and the current date. The offset lasts for at least one entire field and has an amplitude of approximately 0.5 IRE unit. A given field either has the nominal setup or a setup value differing from nominal by 0.5 IRE.
Video Signal 12 to be fingerprinted is inputted to Video Processor 14. Video Processor 14 provides Video Signal 12 to Sync Separator 16 and H a V Blanker 18. Finger Print Data 20 is inputted to Data Modulator 22. Finger Print Data 20 may be in serial or parallel form.
The fingerprint data format is a 64-bit block. The first 16 bits are a (data) frame synchronization word generate by Sync Word Generator 21; the next 16 bits are the source ID number; and the final 32 bits are the date code. A typical sync word is shown in FIG. 2a. The block is repeated indefinitely. The signal format is binary Manchester: a "0" is represented by a 0-1 transition, a "1" by a 1-0 transition, with the phase reference supplied by the sync word as shown in FIG. 2b. Each data bit therefore occupies two fields. It will be apparent to one skilled in the art that other data formats can be used, with the recovery process adjusted accordingly.
Data Modulator 22 receives the Finger Print Data 20 in either serial or parallel form and Sync Word Data Generator 21 and generates Formatted Finger Print Data as described above consisting of 16 bits as synchronization word followed by 16 bits for a source ID and 32 bits for a date code. Since the data is to be inputted to a video signal, it is necessary to synchronize the data to the video signal. An output of Sync Separator 16 consists of Vertical (field) Synchronizing Pulse 24. Sync Separator 16 uses techniques known to one skilled in the art of television engineering to separate Vertical Synchronizing Pulse 24 from the video signal. In addition to putting the data in a format usable by the system, Data Modulator 22 synchronizes the beginning of any Formatted Finger Print Data to the field rate using Vertical Synchronizing Pulse 24.
Since the individual bits of the data (30) outputted from Data Modulator 22 one or more field, it is necessary to blank out the data during the horizontal and vertical blanking periods of the inputted video signal. H & V Blanking Generator 18 receives the video signal from Video Process 14 and generates a combined H & V Blanking Signal 26 that is coupled to Data Blanker 28. Formatted Finger Print Data 30 is coupled to a data input of Data Blanker 28. Data Blanker 28 uses H & V Blanking Signal 26 to blank out the data during the horizontal and vertical blanking intervals of the input video signal. The output of Data Blanker 28 is Blanked Formatted Finger Print Data 32 which is coupled back into Video Processor for adding to the video signal thus producing Fingerprinted Video Signal 34.
When Fingerprinted Video Signal 34 is projected on a screen or displayed on a video monitor, the variation in video level due to the insertion is imperceptible to a viewer, but is detected by any video recorder recording the signal directly or via a television camera doing an off-screen recording of the projected image.
The recovery or "reading" process operates is shown in FIG. 3. A Finger Print Reader 40 is used to detect and analyze any Formatted Finger Print Data 30 present in a Fingerprinted Video Signal 42 is coupled to Low Pass Filter 44 with a cut-off frequency of about 1 Khz. The output of Low Pass Filter 44 is coupled to 30 Hz Notch Filter 82. The 30 Hz Notch Filter 82 is used to remove a 30 Hz component that can be observed in the data as a frame to frame variation in tape output level due to differences in playback video heads. The 30 Hz Notch Filter can be places either before or after Matched Filter 52.
The output of LPF is coupled to Analog to Digital Converter 46. Analog to Digital Converter 46 also receives Clock Signal 48 from Clock Generator 50. The clock frequency is approximately 4 Khz. However clock frequencies from 1 Khz. to 15 Khz. are equally usable. The clock frequency also may be locked to the incoming video. The output of Analog to Digital Converter 46 that is shown in FIG. 2b is coupled to 30 Hz Notch Filter 82. The output of 30 Hz Notch filter is coupled to Matched Filter 52. Matched Filter 52, to a first approximation, doubles the data amplitude and largely cancels the video content. The output of Matched 52 is represented by FIG. 2c.
The output of Matched Filter 52 may not always provide a sufficiently clean signal for further processing due to time base errors in the playback signal. To improve the usability of the output signal of Matched Filter 52 is coupled to Squarer 84 to Phase Lock Loop 86 to generate a clock signal at the bit of the data. This clock signal is coupled to Storage Register 56 to eliminate variations in the data due to time base errors.
The output of Matched Filter 52 that contains data with canceled video is then correlated to the sync word to establish the data framing. Once the data is properly framed, it is digitally integrated to further improve the Signal to Noise Ratio (SNR). This process consists of writing the digitized values of 128 consecutive fields into Storage Register 56 that contains 128 individual registers that have been clocked by Clock Signal 57. Shift Register 56, Correlator 58, Sync Word Generator 60, Peak Detector 62 and Address Control 64 are in a loop that is used to synchronize the data to make it readable by the user. The output of Storage Register 56 is coupled to Correlator 58. In addition a preprogrammed Sync Word Generator 60 couples a unique Sync Word 66, as shown in FIG. 2d, to Correlator 58 to correlate the sync word information in the Fingerprint Data 32 with Sync Word 66. Correlation Data 68, as shown in FIG. 2e is coupled to Peak Detector 62. If there is a match between sync word 66 and the sync word information in the fingerprint data 32, the digitized values of the next 128 fields are added to the first field, and the process is continued as required. As the accumulation proceeds, the data value in each register will be directly multiplied by the number of passes while the video and noise will tend to average out. After a suitable number of passes, generally in excess of twenty, the recovered sequence of 128 high or low offset fields is coupled to Adder 72 and 64 Word register 76 where the data is decoded to the original 64 bits, and the pertinent data is read out to output terminal 80.
The apparatus described above may use a hardware implementation or a combination of hardware and software. Attached is the source code information using the Matlab language for a software implementation of part of the fingerprint reader.
The data that is read out can be connected to any display device capable of reading a 64 bit data stream. Such a device could be an alphanumeric display, a computer screen or incorporated back into the video signal for an on screen display. The display device displays the ID number and date code.
During an experiment using the elements described above, data has been found to be recoverable down to the vicinity of 1/2 millivolt on a 1 volt video signal, less than 0.1 IRE.
It is important to note, that unless the sync word in the insertion device and the reader are identical, no output will result or misleading results will be obtained. In order to make the reading device have a more universal use, the sync word generator in the reader has an ability to be preprogrammed either by the manufacturer for the user or by the user.
In principle, while using the system described above, a person attempting to defeat the system could simply blank or otherwise distort one or two fields out of every 128 fields, a distortion which might be brief enough not to significantly affect the utility of the pirated signal. Since the data is periodic, this would distort one of the characters. Which character in particular would not be known, but with the present data format, there is be a 25% probability of hitting one of the ID number characters, thereby disguising the identity of the pirated unit. Alternatively a pirate may add a signal that will swamp or override the original fingerprint so that the fingerprint reader produces inconsistent or incorrect results.
An alternative implementation has some advantages. In a technique similar to that used for spread-spectrum transmission, the basic data rate may be slowed, and Exclusive-Ors with a known pseudo-random sequence at the original frame rate. Normally the pseudo random sequence will be much longer than the data sequence. This has the advantage of keeping the setup variation rate high, to minimize visibility of the data, while insuring that any attempt to mask a data character would blank an unacceptably long portion of the signal. A second alternative would simply randomly interchange the position of data bits within the block in a time-variant manner, such that no periodic distortion would suffice to distort any particular data character. Data recovery for this second method is clearly more complex, but well within the state of the art. A third alternative may be to encrypt the data prior to it being added to the signal and using complementary decryption techniques for detection.
The apparatus and method described above describes a system and method of adding a finger print signal to a video signal. One of the principle uses of this method and apparatus is to prevent piracy or identify the source of the pirated video material. Another embodiment of the concept is to fingerprint an original film that is ultimately recorded into a video format. This can be accomplished by one of two methods. The film as it is being duplicated in film has a bias light source with a short turn on/off time to provide a small increase of illumination in the film printer. This bias light would be sufficiently low to create a very small shift in the brightness, but not be visible to a viewer of the film. A second method is to provide such a bias during the projection of the film. The rate of the bias light takes into account the various projection media, direct film projection at 24 frames per second, 25 frames per second when used in a 50 Hz television system or the 3/2 mechanism when used in a 60 Hz television system.
The programming code for the finger print detection system is outlined following this Detailed Description of the Invention.
The above description is illustrative and not limiting. Further modifications will be apparent to one of ordinary skill in the art in light of this disclosure.
______________________________________function zc,y,loc! = finger2(file-- name,sim)% This function computes the fingerprint values given the input% filename. It also plots intermediate results for debugging and% visualation. This function assumes that the input is in voc% type 1 format digitized at 4 KHz. The data is assumed to be% frame of 64 bits manchester encoded with a sync word of 16 bits% followed by 16 bits of decoder id, 3 bytes of date data (in bcd)% and finally 1 byte of spare presently set to 0's. Data is% assumed to non-inverted, although it is believed that the decoder% now outputs inverted fingerprint. The sound blaster used did not% invert the data on input, but the sound blaster inverted the data% on output. The data was collected using the program named% fingrprt.exe and executed from the DOS prompt.% Greg Copeland 8/16/94% Get the data and decimate by 8 using a 256 tap% low pass filter. Each bit before decimation is approximately% 133 samples long (4000 Hz sample rate/30 Hz bit rate). After% decimation each symbol period then becomes% approximately 16.7 (4000 Hz/30 Hz/8) samples long.%if sim==1 % 1 for data, 0 simulationfid = fopen(file-- name);% open the input filex = fread(fid,100,`uint8`); % eliminate the header infoi=0; x0 = zeros(8,1); % clear filter statex1 = x0; x2 = x0; x3 = x0; % create lpf for decimationlpf = firls(123, 0 .08 .125 1!, 1.0 1.0 0.0 0.0!);m = -ones(1,66) 0 ones(1,66) !;% and conv with matched filtlpf = conv(lpf,m); % for combined filteringplot(20*log10(abs(fft( lpf zeros(1,8*size(lpf))!)+.00001)));pause(1);dec = 8;flag = 1;x0 = zeros(256,1);x=zeros(dec,1);while flag % loop for each 8 sample blkx0(1:256-dec)=x0(dec+1:256);% until no more data avail x,count! = fread(fid,dec,`uint8`); % read input fileflag = count == dec; % full block to use ?if(flag)x0(256-dec+1:256)=x(1:dec);% shift state infoi = i+1;z(i) = x0' * lpf'; % find decimation sampleendendy = z;clear lpf % free memory for later useclear x0 % these vars are no longerclear x % neededclear zelse % if here generate test datapad = rand(1,48) > .5; % generate some random datadatain = 1 0 1 0 1 1 0 0 1 0 0 0 1 1 1 0 pad!; % with syncy = 2*datain - ones(1,64),y = kron(y, ones(1,8) 0 -ones(1,8)!); % symbol waveformy = kron(ones(1,3),y); % gen 3 framesy = 0.0625*conv(y, -ones(1,8)!) ones(1,8)!); % matched filteringy = y + 0.25*randn(y); % additive noiseendz = y; % this is a simple agc m,n!=size(z);y(1:16) = y(1:16)/std(z(1:31)); % normalize data by thefor i=17:16:n-32 % max in the block ands = 1.0/std(z(i-16:i+31)); % adjacent blocksy(i:i+15) = s*z(i:i+15);endi=i+15;y(i:n)=zeros(1,n-i+1); % clear tailclear z; % free some more memoryplot(y); % plot agc'ed datapause(1);%% next we aquire symbol clock and decimate again by this clock% This phase consists of taking the matched filter output,% differentiating, multipling by the matched filter output and% filtering around twice the symbol clock frequency. The filter% is complex, so that the phase of the filtered data may be found% for later use in the Kalman filter symbol synchronizer%dif=0.5*conv( 1 0 -1!,y); % differentate datay = 0 y 0!; % pad input to same lengtherr = dif.*y; % product of each a,b!=size(err); % build bpf around clockbitfilt = sin((-63:63)*(pi/4.15))-j*cos((-63:63)*(pi/4.15))!;bitfilt = bitfilt'.*hanning(127);% freqencyerr = conv(err,bitfilt); % band pass the data c,d!=size(err);err(1:63)= !; err(b+1:d)= !;phase = -atan2(imag(err),real(err))/pi; % find the phase of bpf outerr = real(err)/max(real(err)),m=400; n=450; t=m:n; % plot some debug stuffplot(t,y(m:n),`w`,t,err(m:n),`b`,t,dif(m:n),`r`,t,phase(m:n),`g`);pause(1);clear dif % free memory%% This is the Kalman filter for tracking the symbol clock%% Kalman filter parameters%% X(k+l) = A * X(k) + U(k)model% Z(k) = C * X(k) + W(k) observationx= 10 8.35 0!'; % initial state var (phase,period,aux1,aux2)A = 1 1 0 % state transition matrix0 1 0 % phase,period,aux1,aux20 0 .8!; % aux to decorrelate err measurementsC = 1 0 1!; % observation matrixRw = 1; % observation noise covarianceRx = 20*eye(3); % initial state covarianceRu = 0 0 0 % model driving covariance0.00001 00 0 .00001!;%% This is an interpolation filter for finding the% interpolated matched filter output. This is required% because the symbol clock may not land exactly on a% sample.%interp = firls(64, 0 .12. 13 1!, 1 1 0 0)); % simple Is firinterp(65) = 0;interp = interp/sum(interp(33));% normalize interp filterj=1; k = 1; % init some loop varsz = zeros(1,128); n,m!= size(y);pass = 1;while x(1) < m-10 % x(1) is the sample #i = floor(x(1)); frac = x(1) - i; % i is the integer sample #e = -(phase(i) + 0.255*frac);% find the phase errRv = C*Rx*C' + Rw; % update the error varianceRvi = inv(Rv); % and its inverseG = A*Rx*C'*Rvi; % calculate Kalman gainx = A*x + 2*G*e; % compute prediction stateRx = Rx - Rx*C'*Rvi*C*Rx; % find prediction covarianceRx = A*Rx*A' + Ru; % find state est covarianceiindex = 9-floor(8*frac); % interpolate sampleyt = y(i-3:1 :i+4); it = interp(iindex:8:56+iindex);yi = yt * it'; % this is the interp resultif(pass > 1) % allow 1 frame pass toze = yi - z(j); % establish good clockif(ze > 1) ze = .5; end% hard limit for noiseif(ze < -1) ze = -.5; end % spikesz(j) = z(j) + ze/(pass-1); % accumulate data each passendloc(k,:) = x(2)-8 x(3) e yi!;% diagnostic vectork=k+1 ; j=j+1; % update loop countersif(j > 128) % mod 128 for accumulationj = 1; pass = pass+1;% (128 1/2 symbols/frame)endendplot(z); % data accumulated at symbolpause(1); % intervalsplot(loc); % plot vco freq, aux var,pause(1); % phase error, and sample value%% find the sync word, using correlation and display results%m= 1 0!;% A C 8 Esync= m -m m -m m m -m -m m -m -m -m m m m -mzeros(1,96)!;zc = real (ifft(fft(z).*conj(fft(sync))));zc = zc/max(abs(zc)); % normalize cross correlation dataplot(zc); % plot corr for debugpause(1); % Oh, you want to see the results?index = find(zc==max(zc)) % find the location of the corr peakzs = zeros(1,128); % and rotate the data to the normalzs(index) = 1; % orientationzc = real(ifft(fft(z).*conj(fft(zs))));zc = zc/std(abs(zc));zc = zc-mean(zc(1:2:32)); % offset compensationplot(zc(1:2:128)) % due to flutter @ 30 Hzdataout = zc(1:2:128)>0; % decode bitsif sim == 0 % test for errors`bit errors = `,sum(xor(datain,dataout))else`bit errors = `,sum(xor( 1 0 1 0 1 1 0 0 1 0 0 0 1 1 1 0!,dataout(1:16)))endbyte-- w = 8 4 2 1!; % convert bits to hex outbytes = zeros(1,16);hexstr= `0` `1` `2` `3` `4` `5` `6` `7` `8` `9` `A` `B` `C` `D` `E``F`!;for i=0:15 % loop for each hex digitt = byte-- w*dataout(1+4*i:4+4*i)' + 1;bytes(i+1) = hexstr(t);end`sync dec id date spare` % display decoded databytes % here______________________________________
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1. rock - noun
· a lump or mass of hard consolidated mineral matter; "he threw a rock at me"
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9. rock - verb
· cause to move back and forth; "rock the cradle"; "rock the baby"; "the wind swayed the trees gently"
Synonym(s): sway
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After a 27-day hiatus, the first CSeries aircraft took off from Montreal's Mirabel airport today for its fourth test flight.
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The aircraft, a 110-seat CS100 variant, left Mirabel's runway 24 at 15:36 local time and climbed northeast from the airport, reaching an altitude of 12,000ft, according to FlightAware.com
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Elton John
Apple Music's Beats 1 Radio Will Feature Shows From Drake, Elton John and Jaden Smith
Pharrell Williams, Disclosure and Dr. Dre will also host shows on the digital music streaming network.
Elton John's Missing Heart-Shaped Glasses Found
Memphis police found the suspect after lifting his fingerprint off a display case in the museum.
Elton John's Heart-Shaped Glasses Stolen From Memphis Museum
A pair of vintage glasses worn by Elton John have been swiped from Tennessee's Rock 'n' Soul Museum.
Elton John and Michael Stipe Come to the Defense of Transgender Prisoners
"Transgender women in male prisons have an equal right to protection from violence and abuse in prison, yet they continue to face horrific injustices."
Elton John Spotted with Dolce & Gabbana Bag After Declaring He'd Boycott It
Apparently it was a lunch bag, so that's OK…?
Elton John Calls For Dolce & Gabbana Boycott After Comments About His Children
Ricky Martin, Courtney Love and Victoria Beckham are also calling out the designing duo for their comments about surrogacy.
Elton John & 'True Blood' Creator Alan Ball to Write Musical Pilot For HBO
The show follows a class of musical prodigies at an Academy of Musical Excellence in 18th century Vienna. And yes, it will be a musical.
New Orleans Jazzfest 2015: Tony Bennett & Lady Gaga, Ed Sheeran, Elton John Headlining
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Elton John Marries Longtime Love David Furnish: See The Photos
Elton John married his longtime love David Furnish over the weekend and invited all his fans to the celebration.


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I have an online business in Australia. What are the steps required to register the business name and the Domain name in the USA?
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text: Hello to all of my friends with Lupus!!!!! A few months ago after kidney surgery I found myself sitting in bed and feeling really down about the situation I was in. I needed to talk to some, anyone! So, I decided I would start a blog for myself and others navigating the unknown waters of autoimmune disease. I named the blog The Things The Don't Tell You. I share when I make a new post on Facebook but I also thought I could share it with all of you and you could also pass it on to others who are struggling. Here it is and please feel free to comment on anything you read. i hope it brings a smile to your face and a feeling of not being so alone.


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Adjustable height steel cart with pullout keyboard tray.
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|101 posts found
If there is one thing that I'm certain of in the MMORPG genre it's that true sandbox games don't work
For the vast majority of the players that are out there.
I began my MMORPG journey in 1998 in what I still consider the ultimate sandbox game, Ultima Online.
Back in 1998 only 2 mainstream MMO's existed, Ultima Online and Lineage and as far as anyone in the West was concerned Lineage didn't exist because we didn't hear about it, so for most western gamers it was Ultima Online or nothing.
Ultima Online was the great experiment, a free roaming, do anything, skill based world to explore. There were no quests to do, no guides, no tutorials, nothing to nudge you in any one direction. You chose your starting city and you were thrown into the world.
Ultima Online was a dangerous place to be, far more dangerous than any other MMORPG I have ever played since. Seeing another player while out exploring the world was a very tense moment, you could almost feel the tension between the two of you, it was this way because Ultima Online was a true sandbox in that anything could happen, you could lose everything you had on you, you could make a new friend, or you could choose to avoid one another.
There were no true safe areas in Ultima Online. The city's were a lot safer than the wilds though you could still be robbed by a thief without ever knowing it or even killed outright before the guards could respond. A common macro in that game when going to a bank in town was "Bank, Guards!, Thief!" since the thieves would hang out at the banks to relieve you of your adventuring loot before you could deposit it.
Playing the game could be incredibly frustrating, for example on several occasions after jumping in my boat and sailing to a resource rich mining area on one of the coasts I would mine for hours only to have a couple guys sail into view, block me in with their boat before I could react and subsequently murder me. I would have to stand there on my boat which was now their boat as a ghost and watch as they looted my lifeless body, transferred all the ore it took me hours to mine to their boat, use my boat key which was now their boat key to deconstruct my boat to sell later. If they were nice they would rez me and gate me to some town, or more often than not just ignore my poor ghost until they sailed to a port and I could get off their boat and go to a healer to get rez'd.
People couldn't really handle a true sandbox game back then, the crying and loss of subscriptions became so great that Ultima Online had to change to survive so they split the game in two and created Trammel, an exact mirror of the old world Felucca but with one twist, it was no longer a true sandbox for there was no player vs. player allowed, you could live in absolute security and thus the great experiment ended and the first true sandbox game had failed.
In my opinion if any AAA dev studio put out a true open world sandbox game today the tears would be endless and the screams of rage deafening.
Anyone who posts that they want a true sandbox game but wasn't around to play Ultima Online before Trammel doesn't really understand what they are asking for in my opinion.
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Novice Member
Joined: 12/26/12
because for the millionth time a shot caller who use to be at Mythic did what Mythic does best, rehash their old work.
As much as I want to rally around your flag or whatever, I'm pretty sure they just said something like "we just wanted to create WoW with Elder Scrolls lore."
Novice Member
Joined: 3/12/06
throw as many stones as you want and pray when your turn comes I have ascended
It doesn't have to be all or nothing. It is possible to have safeguards to almost whatever extent you wish. Look at eve, probably the most successful sandbox game, it has relatively safe zones and some themepark elements.
Joined: 11/07/08
Originally posted by Rthuth434
Tried: EQ2 - AC - EU - HZ - TR - MxO - TTO - WURM - SL - VG:SoH - PotBS - PS - AoC - WAR - DDO - SWTOR
Advanced Member
Joined: 1/31/09
Well Archeage will be sandbox, so all sandbox lovers could go play it. I would love TESO as sandbox, but i like both sandbox MMOs ( played EvE, UO, Darkfail) and themepark MMOs (AOC, SWToR, GW2) But most people dont like sandbox games so i dont see Big AAA MMO as viable option. They need to make money they are not charity, they are company, whose purpose is to maky money by making games.
Joined: 6/14/12
Originally posted by walltar
Archeage sadly atm don't have any economy or anything else that would make it anymore sandbox than the others. If someone is really looking for a true sandbox time to get back in time for 15 years. These days games are made for masses.
Bitter Vet™
Joined: 9/13/06
Fools find no pleasure in understanding, but delight in airing their own opinions. Pvbs 18:2, NIV
-1 to the OP for failing to realize that having FFA PVP with full loot does not make a MMORPG a "true" sandbox. Might have been true for the first sandbox MMO, but isn't required by any means to have a sandbox style MMO.
I consider EVE to be a good sandbox style game, and while you can kill people just about anywhere, there are some severe restrictions in certain areas that make it not only challenging but sometimes downright expensive to do so.
More importantly, EVE lets each player determine how much risk they are willing to take, which is so very important if one wishes to create a commercially successful PVP title in this day and age.
Look at SKYRIM, when you die do the NPC's loot your corpse? Do you start over with no gear? Yet people hold it up as a free form single player title.
We need to stop looking at UO as the only "true model", it died out even there when Trammel was created. Heck, even Aventurine has realized the value of providing safe zones in DF:UW, proving developers can learn after all.
Edit: One final note, I don't see TESO being developed in any sandbox fashion, at best it will be a DAOC hybrid with modern day theme park elements rolled in.
In my day MMORPG's were so hard we fought our way through dungeons in the snow, uphill both ways.
Hard Core Member
Joined: 6/06/12
We live in a fantasy world, a world of illusion. The great task in life is to find reality.
Originally posted by Rthuth434
Pure Sandbox games are horribly bland, boring and doesn't sell at all.
Apprentice Member
Joined: 1/02/07
Imagination is the only weapon in the war against reality.
Devs dont know how to make a sandbox. so they make a themepark.
Having FFA PvP and full loot is a big part of what makes a game a sandbox, without that a game can only be described as having elements of a sandbox experience.
My original post was not to debate what makes a sandbox game a sandbox game, it was to point out that most people would not enjoy a sandbox game.
But since I believe a lot of people are confused about what a sandbox game actualy is, it's a game in which you can do whatever you want within the game environment, good or bad and this would include killing other players and looting them.
Eve Online IS just like Ultima was, it has larger "safe" areas only because it's a space sim and space is massive. You can in fact be killed and looted in High Sec space, its harder to do but there are ways around the restrictions, just like there were in towns in Ultima Online.
Bitter Vet™
Joined: 9/13/06
Fools find no pleasure in understanding, but delight in airing their own opinions. Pvbs 18:2, NIV
Originally posted by Zaskar70
According to who? The International Association of MMORPG Manufacturers and Developers? The MMORPG Game Players Union? By what official body do you claim this definitive characteristic of a sandbox style MMORPG is so declared?
If you follow these forums at any length you'll know there is no commonly accepted defintinon of what makes a "true" sandbox style game. A title like WURM is mostly definitely a sandbox game, more so than most, but there's no PVP to be found as I understand it.
See, the thing is, you do not get to decide what is a sandbox and what isn't, only whether or not you'll play a certain title or not.
Some people would argue that having any sort of restrictions anywhere for any reason make it not a FFA PVP title, and such accusations are routinely hurled at DF:UW, EVE and others who provide some measure of risk management to their player base.
Your argument is specious.
In my day MMORPG's were so hard we fought our way through dungeons in the snow, uphill both ways.
Joined: 11/07/08
Originally posted by Zaskar70
Utter BS!
Tried: EQ2 - AC - EU - HZ - TR - MxO - TTO - WURM - SL - VG:SoH - PotBS - PS - AoC - WAR - DDO - SWTOR
Novice Member
Joined: 9/25/12
Originally posted by asmkm22
Games like Eve and UO have more subs than most so called "sure shot success" themepark games.
But sandboxes don't work! Neither do WOW clones, as seen by the complete failure of all the WoW clones of the last 8 years.
Hard Core Member
Joined: 8/04/04
If you define sandbox as "it must clone the original UO" then you are indeed correct.
Just because UO was the first sandbox doesn't mean it defines what it is. I think a lot of us define a sandbox game as a game where the players define and are able to change the world and make a lasting impact on it. Sandbox games gives players many things to do outside combat (one of the biggest lacking features of MMO's currently). While PvP seems to be a constant with most sandbox games, FFA loot doesn't have to be nor do I understand how FFA defines a sandbox.
Elite Member
Joined: 1/07/06
The adult I am takes care of most things real life. However my inner-child is a GAMER!!
I want a true sandbox, but full loot FFA PVP only if it's optional else it's not a sandbox game but yet a game where the developers force you to play a certain way. Which is not what a true sandbox should be like in my opinion.
There for my MMORPG love started with SWG even though I have played UO and even Meridian59. SWG gave me that experiance that unfortunaly never have been matched....to me..
But I will agree that I feel that a sandbox game how ever it may have been developed will not be a game for many of today's people into games, mainly cause I feel they lack the skill of patience, because most want it now and want it all and many even feel disappointed if they are not able to make use of 75 to 98% of the games content. They want a player run economy to be working flawless from almost release day. They will scream and shout that prices on sale are over-prices even after a few day's or even weeks of playing.
A sandbox game is about freedom to do what you want, how you want it and when you want it. Not how developers want you too play, but just developers given players the tools to shape or make a name in that world.
If I want my name on some leaderboard I already play multiplayer games for that. Do I want my name to be know within a virtual world I play MMORPG's but at the same time I could be that unknow quite person in a MMORPG world.
I do however feel strongly about when a known singleplayer IP turns into a MMORPG then I "wish" expect it to be closer to a virtual world/sandbox game because MMO's simply are not cappable of bring story the way it's done in singleplayer games simply for this tiny fact is that your story in most MMORPG do not influences the world or it's players, where in a singleplayer game your story truly effects the ingame world around you, that's what makes us RPG gamers feel so good as you feel and see the effects around you. So too me it's already a failed attempt if a MMORPG tries to do story in their game as they seem only able to do so in personal type of story's which often seperate's you completely from the over-all ingame world.
Now TESO doesn't go the sandbox route, but it seems to be trying to give us gamers a different experiance than that what we already love and play in their singleplayer series yet still in familiar visual settings. Which some would be more openminded, play the singleplayer series for what it's already great for and try to look at this MMORPG "trying" to give us something different yet familiar.
Originally posted by Kyleran
We could argue this all day and from a thousand different viewpoints. In my opinion most MMORPG vet's would agree that Ultima Online pre trammel is/was the model of what a true sandbox game was/is.
We could argue about perma death, ffa pvp with zero safe areas etc etc, but to my knowlege the closest thing to a true sandbox game that has ever been released and gone mainstream was Ultima Online pre trammel.
If there has been a different game released since 1998 with fewer restriction's, perma death ffa pvp with zero safe areas etc that went mainstream and I hadnt heard about it I would stand corrected.
To MY knowlege there hasnt been one since Ultima Online.
Novice Member
Joined: 7/16/11
Simply, they started making it when Devs still thought they could achieve success vs WoW by making a themepark with a twist, SWTOR, WoW with story, TESO, WoW with RvR etc.
More recently started developments show the genre swinging back to containing more sandboxy elements.
Joined: 11/22/05
"what a boring life, HATING everything" -Gorilla Biscuits
Originally posted by DavisFlight
I guess we should be glad it's not a WOW clone then, instead they decided to try something else from the past.
For every minute you are angry , you lose 60 seconds of happiness."-Emerson
It is a sign of a defeated man, to attack at ones character in the face of logic and reason- Me
Originally posted by steelwind
FFA PvP doesnt define a sandbox but is a part of it, just like the freedom to explore doesnt define a sandbox but is a part of it.


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I don't care if we noticed who we had because of an injury to a starter, he was clearly better when he was starting, and then just for extra measures, we brought Deihl back just to make sure and it's become painfully obvious for those who are hard headed. Why they're still sticking with this ridiculous assessment is beyond me. I don't know if its an ego issue or if they actually think Deihl's individual performance is actually better than Locklear.
Even if they have other reasons to start DD (can't even imagine one)...saying it this way just angers me as I'm sure it does many other fans as well.
Last edited by egyptian420; 11-13-2012 at 02:42 PM.
Odell Beckham Junior: The future of the Giants
Why the **** do the continue to feed us this bull**** and give Diehl the benefit of the doubt. Diehl got abused by an undersized DE that no one outside of Bengals nation even knows about. How about they just keep it real and bench Diehl's sorry ***?
The O-Line is a unit and if one part of that unit is attrocious it can bring down the whole line. With Locklear in the unit seemed more cohesive. With Diehl in they seem overmatched. Simple.
Benching him would hurt his feelings, and since he's a vet they don't want his feelings to get hurt.
he doesnt deserved to get benched. He, like the rest of the O, has to step the **** up and start playing better
"Measure Twice......Cut Once"
You couldn't be more full of **** if you were break dancing in a Port-a-Potty.......Kruunch
"They come to the line of scrimmage and the first thing they do is start looking for me....I know, and they know. When theyd find me theyd start screaming: 56 left ! 56 left!....So theres this thing I did. After the play was over Id come up behind them and whisper: dont worry where I am. Ill tell you when I get there."
- Lawrence Taylor


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Sasquatch Music Festival 2011
Sasquatch 2011: Gold Panda, Live In Concert
By Andy Hess
Language Advisory: This is a live concert recording, and may not contain language suitable for all audiences.
Derwin Panda, who performs as Gold Panda, has said in interviews that he likes to start with a blank page when he makes music. That mindset of starting from scratch can be heard throughout his excellent debut album Lucky Shiner and in this live set. Layering found sound upon found sound, Panda teases the familiar noise from his debut while adding an improvisational element to his music.
Recorded live at The Gorge on Sunday, May 29, Gold Panda performs here as part of the 2011 Sasquatch Music Festival outside Seattle, Wash.
Copyright 2011 National Public Radio. To see more, visit http://www.npr.org/.


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AS affects an estimated 129 out of 100,000 people in the United States and commonly develops between the ages of 15 and 40. Men are three times more likely than women to develop AS. Although the course and severity of AS varies from person to person, some patients with progressive AS can develop spinal deformities leading to significant disability.
The cause of AS is not known, though genetics may play a role: 90 percent of people with AS share a common genetic marker, but having this genetic marker does not mean a person will develop the disease.
Important Safety Information
Serious infections, sepsis, tuberculosis (TB) and opportunistic
infections, including fatalities, have been reported with the use of
TNF-blocking agents, including HUMIRA. Many of these serious infections
have occurred in patients also taking other immunosuppressive agents that
in addition to their underlying disease could predispose them to
infections. Infections have also been reported in patients receiving HUMIRA
alone. Treatment with HUMIRA should not be initiated in patients with
active infections. TNF-blocking agents, including HUMIRA, have been
associated with reactivation of hepatitis B (HBV) in patients who are
chronic carriers of this virus. Some cases have been fatal. Patients at
risk for HBV infections should be evaluated for prior evidence of HBV
infections before initiating HUMIRA. The combination of HUMIRA and anakinra
is not recommended and patients using HUMIRA should not receive live
|SOURCE Abbott
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At Buffalo Medical Group, P.C. (BMG) our physicians, health care professionals, and support staff are dedicated to delivering a comprehensive range of services in a compassionate, comfortable and patient-centered environment.
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Buffalo Medical Group Names Radiation Medicine Director
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History and Heritage in Cardiff
From the ancient Romans and Normans to the industrial revolution and coal industry, a rich and diverse history has left its mark on the Welsh capital and now you can enjoy this interesting past at Cardiff's historical attractions. Enjoy your own bit of Cardiff's history during your stay at the Parc Hotel. The grand Victorian building that houses our elegant hotel is one of the architectural highlights of Cardiff's city centre.
A rich history
The Romans set up a fort at Cardiff nearly two thousand years ago but most of the remains are now buried beneath the impressive Cardiff Castle. This imposing stronghold was built in the 11th century and is now one of the premier historical attractions in Cardiff. The years since this castle was established have seen Cardiff rise to its current significant position and this history, as well as the wider story of Wales, is traced out at the National Museum of Wales. A trip to this impressive museum reveals an educational and engaging historical attraction.
Enjoy the past during your stay
Cardiff is proud of its long history and the city celebrates its roots in the many historical attractions dotted around the streets. If you are a history lover then you will be spoilt for choice during your stay in the city. Staying in the historic Parc Hotel will put you right into the heart of this exciting city. From our attractive rooms and suites all of Cardiff's many and varied historical attractions are within easy reach.


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