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United States Patent Nakanuma et al.
[ 51 May 23, 1972 [54] MEMORY MATRIX USING MIS SEMICONDUCTOR ELEMENT [56] References Cited [72] Inventors: Sho Nakanumn; Tohru Tsqiide; Toshio UNI D STATES PATENTS Wada; Ryo Igarashi; Katsuhiro Onoda, all f Tokyo, Japan 3,508,211 4/1970 Wegener ..340/1 73 [73] Assignee: Nippon Electric Company, Ltd., Minato- PfimaUEmMner 1-e"el]w Fears Tokyo Japan Att0mey-Sandoe, Hopgood and Calimafde [22] Filed: Mar. 13, 1970 57 ABS 21 Appl. No.: 19,217 1 CT A memory matrix device is disclosed in which an MlS semiconductor elementis employed as the memory element. [30] Foreign Application Priority Data The semiconductor element has an insulating film disposed Mar. 15, 1969 Japan ..44/20670 between the semiconductor substrate and conductor electrode. That film contains capture centers which capture elec- [52] LS. Cl. 307/238, 307/279 trons upon the application of a voltage exceeding a critical [5 1 1 Int. 1c value across the electrode and ubstrate [58] Field of Search ..340/l73 R, 173 FF; 307/238,
307/279 6-Clairm, 14 Drawing Figures l l I I I l W39 i i .L 1' .i.
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INVENTORS suo NAKANUMA TOHRU TSUJIDE TOSHIO WADA RYO IGARASHI KATSUHIRO ONODA @TW M ATTORNEYS MEMORY MATRIX USING MIS SEMICONDUCTOR ELEMENT The present invention relates to memory matrices using semiconductor memory elements having memory function, and, more particularly to a, non-destructive readable word arrangement type matrix in the form of an integrated circuit.
Known conventional memory devices having memory function include magnetic memory devices, associative memory devices utilizing bistable flip-flop circuits, and memory devices using insulated gate type semiconductor elements (hereinafter referred to as MIS semiconductor elements) having metal-insulator-semiconductor structure (hereinafter referred to as MIS structure) in which the hysteresis characteristics of the capacity-voltage characteristics of siliconnitride are utilized.
Among these memory devices the magnetic memory device is not preferred as a large scale memory device in which high speed is required, because of its difficulty of read out at high speed, complexity of providing connection to the peripheral electronic circuits, and difficulty of microminiaturization. Bipolar integrated circuits are used in high speed memory device and insulated gate field effect integrated circuits (hereinafter referred to as MIS integrated circuits) are used in large capacity memory device wherein the draw-backs of magnetic memories are largely overcome inferiority as described above is improved. In a bipolar integrated circuit an epitaxial layer is formed on a silicon substrate of one conductivity type and circuit elements such as transistors, diodes and/or resistors are formed on the epitaxial layer and electrically isolated from each other by a diffused layer of the same conductivity type as the silicon substrate, while the epitaxial layer is of the opposite conductivity type. The bipolar integrated circuits are fabricated through a number of diffusion and various other processes wherein the final yields are inevitably low. The bipolar integrated circuits have such defective characteristics that a considerable portion of the epitaxial surface area is occupied by the isolation region and many components are required in a unit function. On the other hand in the MIS integrated circuits in which insulated gate field effect transistors are used, the isolation region is not required and hence a higher integration density may be obtained in bipolar integrated circuits while the electronic circuits are similar to those of the bipolar integrated circuits and the number of components is not reduced. For example, a flip flop circuit which performs as a one bit memory cell in an integrated circuit consists of two active elements, two load elements and two interfacing elements with external circuits, or a total of six circuit elements. It is a serious defect for a semiconductor device that the number of required components is high in realizing a large scale integrated circuit, increasing the capacity of its function and improving its reliability and yields. Another defect of such integrated circuits is that the stored information is completely destroyed if the power supply is cut off. It is desirable for a low power memory or a high speed read only memory in which a wide range of application is expected that the stored information is conserved when the power supply is cut off.
In order to reduce the number of components required for a unit function much has been expected in the MIS semiconductor devices using silicon nitride as the gate insulation layer which has hysteresis characteristics in its capacity-voltage curve. Applied Physics Letters, vol. 12, No. 8, pp 260-263 is referred for the application of MIS semiconductor device as a memory element. In this MIS semiconductor device the surface charge density distribution directly under the insulated gate film in influenced by applying a voltage above a threshold value across the metal electrode and semiconductor substrate of the MIS structure, thereby maintaining a predetermined surface charge density for a predetermined period of time. The maintenance of surface charge density in the MIS structure is given rise to by the electrons injected into the silicon nitride film and captured by the temporary capture center existing therein, and is destroyed easily by applying voltage of an opposite sense across the metal electrode and semiconductor substrate or spontaneous discharge.
In the memory element of an MIS semiconductor device using the hysteresis of this silicon nitride film, the reduction in the number of circuit elements required in a unit function enables an increase in the capacity of function; however, as the captured electrons easily escape from the capture center due to an external electric field thereby, deteriorating the memory stability or reproducibility, practical application is almost impossible. The increment of voltage transferred by the memory is small and the noise margin and output signal are both low.
Therefore, it is an object of the present invention to provide a memory device having high reliability and integration density with stable memory function.
It is another object of the present invention to provide a high speed memory device with advantageous electrical characteristics having an extremely simple structure which is suitable for mass production.
It is still another object of the present invention to provide a semiconductor memory device in the form of an integrated circuit wherein a given information may be stably stored for a desired period of time.
The present invention is based upon new knowledge that negative charges are stably stored within a certain insulating material upon the application of a voltage above a critical value. Such a phenomenon may be explained by hypothesizing the existence of permanent capture centers which semipermanently capture electrons injected into the insulating material. A call for such a novel capture center enables a clear distinction from a temporary capture center in silicon nitride or the like from which an electron easily escapes upon the application of an opposite electric field. In an MIS semiconductor device an insulating material having such permanent capture center is employed as the insulating gate film. The capacity-voltage curve of the device significantly shifts toward a predetermined direction along the voltage axis when voltage above a threshold value is applied to the gate electrode, wherein the threshold value is independent of the polarity or type of current such as-direct or alternating current, and the transferred characteristics are stable and not restorative when followed by the application of an electric field.
The present invention provides a memory matrix device using as the memory element an MIS semiconductor element having an insulating material disposed between the semiconductor substrate and the conductor electrode containing permanent capture centers which capture electrons semipermanently upon the application of an electric field above a critical value, wherein the row and column lines of the matrix are electrically connected with the two electrodes. The connection of row and column lines is realized byapplying write drive signals across row and column lines thus causing capture of electrons within the insulating gate film. The row and column lines are disposed such that output signals are obtained from the column lines by applying read signals at row lines or word lines. The row and column lines of the word arrangement type memory device are designated as word and digit lines, respectively, wherein either write or read drive signals are applied at the word lines. Drive signals are applied across the digit line and word line during write cycles and output signals are read at the digit lines during read cycles. The memory device in accordance with the present invention is preferably provided with a plurality of MIS structures within a common semiconductor substrate wherein electrons are injected into the insulating material film of a predetermined MIS structure within the matrix selected by the application of a drive signal across a particular set of row and column lines, thereby causing a significant storage of negative charges in the insulating film due to the capture of electrons.
The memory device in accordance with the present invention is provided with a large capacity of functional integration density while the number of circuit elements required in a unit function is reduced by using an MIS semiconductor element of simple structure. The extremely simple structure enables high production yields and high reliability of the resulting device. The memory device in accordance with the present invention also provides high noise immunity due to the significant number of charges stored in the semiconductor element upon the application of drive signals in excess of a predetermined critical voltage, and semipermanent memory with good stability due to the secure capturing of injected electrons at the capture centers. Such a memory device is extremely useful in practical application in that electrons are injected into the gate insulating film either from the conductor electrode or semiconductor substrate and the capture of injected electrons is independent of the polarity of the applied signal, enabling thereby an easy write operation.
The present invention will be described hereinafter referring to the embodiments described in the accompanying drawings for a better understanding of the above characteristics and advantages of thememory device.
FIGS. 1A and 1B graphically illustrate the capacitance-applied voltage characteristics of MIS-type devices for explaining the principles of operation of the invention;
FIG. 2 is a cross-sectional view of an MIS transistor memory device according to one embodiment of the invention;
FIGS. 3A and B graphically illustrate the static characteristics of the device of FIG. 2;
FIG. 4 is a schematic circuit diagram of a first embodiment of the invention;
FIG. 5 is schematic circuit diagram of a second embodiment of the invention;
FIG. 6 is a plan view of third and fourth embodiments of the invention;
FIGS. 7A and 7B are cross-sectional views of the third embodiment respectively taken across lines a-a and bb' of FIG. 6;
FIGS. 8A, 8B, and 8C are cross-sectional views of the fourth embodiment of the invention respectively taken across lines a-a', bb' and c-c in FIG. 6; and FIG. 9 is a schematic circuit diagram of a fifth embodiment of the invention.
Referring to FIGS. 1A and 1B, the capacity-voltage characteristic curves are shown of MIS structures formed by sequentially depositing alumina film containing a permanent capture center and an aluminum electrode onto a p-type silicon substrate having 2 ohm-cm resistivity and an n-type silicon substrate having I ohm-cm resistivity, respectively. Shown in FIGS. 1A and 1B are the characteristics of the two structures, respectively, with C/Co being plotted along the ordinate and applied voltage V across the aluminum electrode and silicon substrate being plotted along the abscissa wherein C/Co is the capacity of the MIS structure normalized by the capacity Co due to the insulating film alone. The alumina film on the device has thickness of 1,800 A and is formed through vapor growth by introducing a mixture of 0.5 mol. percent aluminum chloride gas, 1.5 mol. percent carbon dioxide, and 98 mol. percent hydrogen over a silicon substrate heated at 850 C. The critical voltage required for the permanent capture center within the alumina film of such an MIS structure to capture electrons is 40 volts or 20 volts applied to the aluminum electrode with the silicon substrate at 0 volt.
The capacity-applied voltage characteristics shown in FIG. 1A is obtained by varying the voltage below critical values between 30 and volts across the aluminum electrode and the silicon substrate of a sample in storage state 11 at 0 bias voltage, and above critical values between 70 volts and 35 volts. When the voltage is increased positively from the initial state 11, an inversion state indicated at 13 is reached after the initial curve 12, and when the voltage is decreased after a few minutes to below the critical value, the initial state 1 I is restored via the curve 12. Therefore, it is understood that electrons are not captured in the alumina film at 30 volts. When the voltage is decreased and kept at 15 volts and increased again to the inversion state 13, the initial curve 12 is obtained. However, when the sample is kept at 70 volts or 35 volts for approximately 1 minute, the characteristic curve is transferred toward positive direction by approximately volts and a curve 14 is obtained in either case. The obtained characteristics are extremely stable and are reproducible between 0 and 30 volts. The upper limit of transfer of the plied voltage and time during which the sample is held at the I maximum voltage. Since the characteristics obtained after transfer are so stable that the curve is distinctive from the initial curve. The noise immunity may be sufficiently increased by transferring the curve as desired.
FIG. 1B shows the capacity-applied voltage characteristic of an MIS structure using an n-type silicon substrate, wherein an inversion state 1 1, initial characteristic curve 12', storage state 13', and characteristic curve 14 are obtained by applying voltage in the same manner as in the sample of FIG. 1A.
Referring now to FIG. 2, an MIS transistor is described using as the gate insulating film an insulating film having the capacitance-voltage characteristics shown in FIGS. 1A and 1B, wherein a silicon substrate 21 of one conductivity type has a drain region 22 and a source region 23 with opposite conductivity type vapor diffused therein. A thin silicon dioxide film 24 and an alumina film are 25 deposited on substrate 21, a gate electrode 26 is formed on the insulating film, and interconnections 27 and 28 form ohmic contacts with the drain and source regions 22 and 23, respectively. A substrate gate electrode 29 ohmic-contracts the bottom side of the substrate 21. The alumina film 25 is vapor grown as described in conjunction with FIG. 1B and has a thickness of 1,800 A. The silicon dioxide film 24 may be formed by thermal oxidation or vapor deposition and has a thickness in the range of 0 580 A. The channel length and width of the transistor used in measuring the transfer characteristics are 7 p. and 300 a, respectively.
FIG. 3A illustrates n-channel operation of a transistor of the type shown in FIG. 2 using p-type silicon substrate 21 having a resistivity of 2 ohm-cm, wherein the ordinate represents drain current I and abscissa represents gate voltage V During the measurement the voltage across drain and source is held at 15 volts. A curve 31 represents the characteristics of a transistor having 200 A of silicon dioxide 24, wherein the gate voltage is kept below critical value, and a curve 32 shows the characteristics of the same transistor after the gate voltage has been increased above the critical value. A curve 32 represents the characteristics of the same transistor after the application of 50 volts AC at a commercial frequency for approximately 20 seconds across the gate electrodes 26 and 29, thereby injecting electrons into the permanent capture centers of the alumina film 25. Since the operation of such an MIS transistor may be transferred from depletion region to enhancement region by applying an external electric field, i.e., the transistor operating in depletion region, or along the curve 31, may be transferred to operate in enhancement region, or along the curve 32. Such performance is preferable in the associative memory element or unit memory element of a memory matrix using the bistable characteristics of the conventional electronic circuit. As the information once written is not destroyed during the electrical operation for reading the information, it provides a miniaturized integrated circuit having high reliability. The characteristics of an n-channel MIS transistor in the initial state when the silicon dioxide is removed is represented by a curve 33 in enhancement region. In this MIS transistor having a simpler structure the operating characteristics with higher gate threshold voltage is obtained by captured electrons in the alumina film. As a result various memory devices may be realized by providing gate biasing between the initial and transferred characteristics.
FIG. 3B shows the relation between drain current I and gate voltage V of a p-channel insulated gate field effect transistor using an n-type silicon substrate having 1 ohm-cm resistivity. Curves 31, 32, and 33' are the characteristics at initial, after application of 50 volts AC, in excess of critical value, and without silicon dioxide, respectively.
Referring now to FIG. 4, the first embodiment of the present invention will be described. The first embodiment is a semiconductor memory device wherein gate electrodes, drain electrodes, source and substrate gate common electrodes of MIS transistors O O Q are connected, respectively, write row lines W W W and read row lines R R R are intersected by write-read column lines D D D forming a matrix line, and the MIS transistor uses as a gate insulating film an insulating material having permanent capture centers at the predetermined intersections of the rows and columns. The MIS transistors Q Q Q are of the p channel type. The write operation into the transistor Q for example, is achieved by applying a positive voltage across write row line W and column line D with the row line being more positive. According to such application of voltage the gate and substrate electrodes of the transistor Q connected to the row line W and column line D respectively, provide an electric field in the gate insulating film in excess of the critical value, resulting in electrons being captured within the insulating film. Due to the captured electrons the transistor Q located at the intersection of the row and column lines W and D respectively, will have operating characteristics in deplection region with significantly high gate threshold voltage as shown in FIG. 33. Such a write operation will take place for all predetermined intersections in a similar manner.
The read operation in the embodiment of FIG. 4 is performed by applying a gate biasing voltage between gate threshold voltages before and after the transfer of the MIS transistor at predetermined row lines, and providing read lines of the same row with read signal, thereby performing linear selection. In order to prevent signal detouring a deep biasing voltage is applied to such row lines in which data are not to be written, wherein the deep bias is sufficient to cut ofi' such transistors that are transferred. When the transistor Q alone for example, among the transistors Q Q Q of which the drain electrodes are connected to the read row line R has transferred characteristics, the drive signal applied to the read row line R gives rise to an output signal at output column line D alone via -channel of the conducting transistor Q In this embodiment a unit memory function consists of only one MIS transistor, thereby improving the capacity of function as much as 6-fold compared with the conventional integrated memory circuit with the same semiconductor substrate size, and also increasing the reliability because of its simple structure. The distinctive gate threshold voltages of the transferred and initial states provide sufficient noise immunity, and high speed reading is feasible since the read current is not affected by the stray capacitance of the gate circuit. It is needless to say that the transistors in this embodiment may be n-channel, in which case the operation is reversed.
The second embodiment of the present invention will now be described referring to FIG. 5. The substrate gate electrode of each MIS transistor in each column is connected respectively to the write column lines WD WD WD It is preferred in the second embodiment that the write operation be performed by applying a gate voltage in excess of critical value at a selected pair of the write row lines W W W and write column lines WD WD WD The read operation is performed by detecting conduction and non-conduction of the current path at the pair of read row and column lines R, and D, which are connected to the drain and source electrodes of the selected transistor, while the gate electrodes of the transistors at selected intersections of the matrix are held at predetermined gate biasing voltage through the write row and column lines connected to the respective gate electrode.
While in the second embodiment interconnection is more complex in constructing a matrix, an additional degree of freedom in write and read of information enables either linear selection or current coincidence.
FIG. 6 shows a layout of an integrated circuit structure of the second embodiment, wherein solid lines outline the surface metal interconnection and broken lines indicate each semiconductor region. The metal interconnections are write row lines W W and W and read row lines R R and R deposited on the upper face of insulating film which, in turn, is
deposited on the surface of the semiconductor substrate. In this embodiment are used as column lines semiconductor regions 61, 61 and 61" of opposite conductivity type formed perpendicular to the row lines in the semiconductor substrate of one conductivity type, and source regions 62, 62' and 62" of one conductivity type formed in the semiconductor regions are used as column lines. These regions enable intersection without the expense of multi-metal layer interconnection, with each row line underpassing at each intersection. External connection around the periphery of semiconductor substrate through read electrodes 63, 63', and 63" and write electrodes 64, 64 and 64" are provided as required. Formation of the surface interconnection using a single metallization improves yields significantly. MIS transistors are formed at the intersections of each row and column lines as follow: rectangular regions 61, 61' and 61" of opposite conductivity type are semiconductor substrates common to each column, regions 62, 62', and 62" of one conductivity type are source regions common to each column, and regions 65, 65 and 65" of one conductivity type formed parallel to the source region at each intersection in the semiconductor region 61, 61' and 61" are drain regions. Within the insulating film coating the surface of the semiconductor substrate permanent capture centers are contained as previously described, and fingers 66, 66" and 66" of the read interconnections R R and R operate as gate electrodes extending between the source and drain regions over the insulating film. The fingers 67, 67 and 67 extending from the write interconnections W W and W to drain regions 65, 65 and 65" of each MIS transistor are drain electrodes. On the source regions 62, 62 and 62" which are common to each column are formed source electrodes 68, 68' and 68". These source electrodes are merely for internal connections and are not for external connection.
FIG. 7A is a cross sectional view sectioned along the line aa of FIG. 6 and FIG. 7B is a cross sectional view sectioned along the line bb of FIG. 6, wherein the source electrode 68 short circuits the source region 62 and semiconductor region 61, and the external electrode 63 similarly short circuits the source region 62 and semiconductor region 61. These electrodes ohmically-contact the source region 62 and region 61 for reducing the series resistance of the column line. As shown in these drawings, the regions 61, and 61' of opposite conductivity type are formed in a semiconductor substrate 71 of one conductivity type, each region electrically being insulated from the others with the pn junction formed between each region and the substrate. Voltage is supplied to the semiconductor substrate 71 through the bottom ohmic-electrode 72 for reverse biasing the pn junctions between each region and the substrate. Aspects of such pn junction isolation and reverse biasing are exactly the same as conventional semiconductor integrated circuits.
In the third embodiment of the present invention the common source region 62 of the MIS transistor in each column and semiconductor region 61, i.e. the semiconductor substrate of MIS transistor, are short circuited, and it is an MIS integrated circuit having the circuit structure shown in FIG. 4. According to the third embodiment an integrated memory circuit may be obtained with large capacity of memory function, higher reliability of operation and good yields.
FIGS. 8A, 8B and 8C show the fourth embodiment of the present invention, which is cross sectioned along the lines aa', b-b and cc' of FIG. 6, respectively. As clearly shown in the cross sectional views of FIGS. 8A-C and in FIG. 6, the ohmic electrode 63 contacting the source region 62 which is common to the column and the external electrode of ohmic electrode 64 contacting the semi-conductor region 61 are separately formed. In accordance with the fourth embodiment a large scale memory device may be obtained having the same circuit structure as shown in FIG. 5. It is needless to say that the common source region 62 corresponds to the read column line D, and the semiconductor region 61 corresponds to the write row line WD,
In the third and fourth embodiments described referring to FIGS. 7 and 8, an alumina film 73 of a uniform thickness of approximately 2,000 A is deposited over the entire surface of the semiconductor substrate. The alumina film 73 contains permanent capture centers for electrons within the film as shown in conjunction with FIG. 2, wherein the gate insulating film directly under the gate electrode 66 stores negative charges upon a write operation such that electrons are captured by the centers and surfacehole charges of 10 l charges/cm are induced in the semiconductor region 61. The operation of the embodiment shown in FIGS. 6 through 9 is identical to that in FIGS. 4 and 5.
FIG. 9 shows the fifth embodiment of the present invention, wherein the number of external leads is significantly reduced. In the embodiment of FIG. 4 write lines W W W and read lines R R R are provided. It is desirable that the number of external terminals of memory devices be reduced by as much as possible. The fifth embodiment is provided with three additional column lines T T and T and transistors P,, P,, P P,', P,, P which are identical with the MIS transistors constructing the matrix. In this embodiment the read row lines R,, R R and write row lines W W W are combined using the transistors P P P;,,...., as shown in FIG. 9. The gate and drain electrodes of each memory element Q11, Q1 Q31, are respectively connected to the source electrodes of the transistors P,, P P, and to the source electrodes of the transistors P,, P P When a write operation is to be enabled a write command voltage is applied across the electrodes T and T in order to turn on the transistors P, P P thus enabling the write operation through write row lines W W and column lines D D thereby storing information in each memory element. When a read operation is to be enabled, transistors P P P, are turned off and read command voltage is applied across the electrodes T and T turning on the transistors P P P and a read signal is applied to row lines W,, W W giving rise to output signals from column lines D D D Therefore, the number of external electrodes are reduced significantly and if all transistors P P P are turned on and positive pulses below the critical voltage are given as read signal, output signals without detouring are obtained through the column lines with unidirectional current from those memory elements .which have information stored. The transistors P P,, P P are also memory elements having memory capability. After each memory element Q Q Q has information written, a do or ac voltage above critical value may be applied across the electrodes T and T and across electrodes T, and T to convert the memory into a read only memory.
In any of the foregoing embodiments the conducting channel of each MlS transistor is selected according to the requirement.Besides the use of alumina as described above other insulating materials such as oxides of titanium, tantalum, molybdenum, zircon, etc. may exhibit similar performance characteristics by storing a large amount of negative charges upon the application of a voltage in excess of a certain critical voltage, and such materials may be used. Although in the foregoing description the column lines are the substrate regions, source regions and drain region each column being common to each line, each transistor may be separately formed, the intersection may be underpassed using a diffused region of opposite conductivity type to that of the source and drain regions, or by using multi-layer metallization.
Although specific embodiments are disclosed in the description herein, it will be understood that the embodiments are for purposes of clarifying the disclosure only and are not to be interpreted as any limitation on the scope of the present invention. Therefore, it will be appreciated that variations of the present invention will be apparent to those skilled in the art a and that the present invention will spirits and scope.
What is claimed is:
l. A memory device employing insulated gate field efiect memory transistors comprising a first group of row lines, a second group of row lines, a plurality of column lines, and a plurality of insulated gate field efiect memory transistors respectively arranged at the intersections of said first group of row lines and said column lines, the gate electrodes of said memory transistors arranged in each of. said first group of row lines being commonly connected to the respective ones of said first group of row lines, one of the, source and drain electrodes of said memory transistors arranged in each of said second group of row lines being connected in common to the respective ones of said second group of row lines, the other of the source and drain electrodes and the substrate of said memory transistors arranged in each of said column lines being connected in common to the respective ones of said column lines, each of said insulated gate field eflect memory transistors having an alumina film as an insulating gate film, said alumina film having the characteristic of exhibiting a storage capability of negative charges upon the application in the gate film of an electric field of a magnitude exceeding a predetermined critical value.
2. The memory device of claim 1, in which said first group of row lines includes a plurality of write row lines, said second group of row lines including a plurality of read row lines said plurality of column lines including a plurality of read column lines and further comprising a plurality of write column lines respectively connected to thesubstrates of the insulated gate field effect transistors in each of said column lines.
3. The memory device of claim 1, further comprising three additional column lines, and a pair of additional field effect transistors for each of said row lines, the gate electrodes of each of said transistor pairs being respectively connected to two of said additional column lines, said first and second groups of row lines being respectively connected to the output electrodes in both transistors in each of said transistor pairs, the substrates of each of said transistor pairs being connected to the third of said additional column lines.
4. The memory device of claim 3, in which the gate electrodes of said memory transistors in each of said row lines are respectively connected to one of the output electrodes of one transistor in each of said transistor pairs, one output electrode of said memory semiconductor elements in each of said row lines being respectively connected to said one of the output electrodes in the other transistor in said transistor pair.
5. The memory device of claim 4, in which said write row lines are respectively connected to the other output electrode of both transistors in each of said transistor pairs.
6. The memory device of claim 4, in which the other output electrode in each of said memory semiconductor elements are connected respectively to said column lines and to the substrate of said elements.
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MODESTO, CA - A man died early Friday morning after being shot in a west Modesto neighborhood Thursday afternoon.
Modesto police responded to the 100 block of Maple Street around 2 p.m. after getting a call about a shooting.
Sgt. Ivan Valencia said when officers arrived at the scene, they found a man suffering from at least one gunshot wound. As they waited for EMTs, officers began CPR. The man was then taken to the hospital by medical personnel.
The man, identified as Sir Jay Louis Taylor, 25, of Modesto, was pronounced dead at the hospital around 3 a.m. Friday.
Witnesses told police they saw two men running from the area after hearing gunshots. Valencia said it is unclear how, or if, the two men were involved in the shooting.
The motive behind the shooting is unclear, Valencia said.
Anyone with information about the shooting is urged to call police at (209) 521-4636. Callers to Crime Stoppers can remain anonymous and may be eligible for a cash reward. Tipsters can also text information to Crime Stoppers by sending a text message to 274637. Just type "TIP704" along with your message.

subset: commoncrawl


text:
"A mother is a person who seeing there are only four pieces of pie for five people, promptly announces she never did care for pie." Tenneva Jordan
Normally, I miss my mother every single millisecond, every day; But Today right at this moment I miss her so much that I just feel this urge to write it down and this is dedicated to all the mothers in the world. I want you to know that nomatter how your children might behave or not listen to you, At the end of the day, You are the only last thought on your children's minds.
I don't know if we have ever thought about it, specially boys, we never think about it. Scientifically, A normal person can only bear a pain of 45 Del but when our mother gave birth to us they had to reach a limit of 70 Del. Can you jus believe it?? It sounds pure frictional right?? But lets take it practically. Our mother had us in her womb for around like 9 months. Now, How about this, you carry a bag , you eat carrying your bag, you take shower carrying your bag, you go out carrying your bag, just for 9 days. It is just dead hard, and Think how our mother carried a whole single new body for 9 months and gave birth to us. I hope each and every one of you value this effort and be a good person for our mothers.
I once had a conversation with a new born mother and will never forget what she said. "I was born the day, I gave birth to my child". The most amazing words I ever heard in my life. I will olways cherish those words and deeply have it engraved it to my heart. Mother are just so great cause their love for us is greater than all. The heart of a mother is a deep abyss at the bottom of which you will always find forgiveness. A mothers love is greater than every love that exists in this world more than the term humanity. Its jus so warm and deep.
I olways can feel my mother prayers everywhere I go and It is just so warm even shes not right here. I want to share briefly about my mother today. When I was small around grade 1, I guess; I suffered from jaundice, Can you believe it she left her job just to make sure I never had to suffer from any of those diseases? It still makes me so happy that I happy someone beside me that I can literally lean on when am very helpless. Every day I returned from school, nomatter how busy she would be; She would come home by 3 pm and prepare food for me, just so that I wouldn't have to fall sick again. I want my mother to know I appreciate every effort of hers to keep me happy and healthy on every step of my life. It did take a lil longer to realize it by I want to tell her, Never now will ever this son ever make u unhappy. You will olways be in my heart.<3
If today was my last day of my life, You would be the last person I would want to visit
If this was my last second of my life, You would be the only last thought on my mind.
I Love you Mommu.


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Welcome to the new and improved website for Wyoming Central A.B.A.T.E.
We have a fun filled year planned. Please check out the site and give us some feedback.
If you are on FaceBook, our page is: WCA FaceBook Page
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Graduate Education at TAMBCD
Graduate education programs at Texas A&M University Baylor College of Dentistry seek to provide an educational experience that emphasizes the development of a strong basic science background coupled with advanced diagnostic and clinical competence.
The goal is to develop a highly skilled specialist with the analytical, clinical and management abilities necessary to provide optimum oral health care and to produce a graduate who will have the ability to critically evaluate research literature, as well as have the inquiring attitude necessary to pursue advancement in the practice, research and/or teaching of specialized oral health care.
The Research and Graduate Studies Office administratively coordinates all faculty and student research projects at Texas A&M University Baylor College of Dentistry.


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Posted by christina on 10/19/2012
i lived in the neighborhood for 26 years and ive tried every mexican joint on the ave. My favorite growing up was playa del mar but they closed in mid 2000 and from there i started trying new spots...ive had traspasada, taco veloz, tecalitclan, mr tacos. Anyways dona natys i tried last night got pico and chips large horchata 2 steak tostadas and side rice food was awesome!! tostadas were hot when delivered and humungous...steak piled high with lots of toppings. rice was good. ive had better but cant complain i love rice period!!! horchata nice and cold which was great cause I asked for no ice. Pico very spicy so watch out if you dont like spice. Chips were excellent not greasy perfect size...prices very reasonable and very fast delivery!! I'm definately going back and i definately reccommend this joint too friends and family...
Posted by Nick on 06/15/2006
Naty's is the bomb. Where else can you get an awesome casual meal for two, for less than $9? The food is great, fast and cheap. The salsa is fantastic as well. The service is attentive, friendly, and always helpful. The steak torta is my favorite, but everything is good.


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This page introduces students to the materials and information they need in order to start their computer-assisted class. If you have a question that is not listed below, please contact your instructor or another student in your class.
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DWRL classes are identified in the course schedule by a CA designation, which stands for "Computer Assisted." The DWRL hosts courses in the Department of Rhetoric and Writing ("RHE") and the English Department (course prefix "E").
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In a computer-assisted classroom, you will often work with your writing in electronic, not paper form. Therefore, you will need a reliable method of transporting your files from a home or lab computer to a classroom computer. The following methods are available, listed in order of preference:
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Many students who use a home computer or non-DWRL lab computer end up using a different operating system to compose and edit documents. For example, you may have a Windows-based computer at home but may may lot in to Mac OS X in the lab. Generally, most documents (such as Word and HTML documents) will be readable on both provided you have used Webspace or have a USB flash drive compatible with both computers.
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What is Open Lab?
Open Lab is another name for the DWRL Multimedia Lab (PAR 102), which is open for DWRL students who want to work on classwork. Since the lab is available only to students currently enrolled in DWRL classes, they are often much less crowded than regular times at the Student Microcomputing Facility (SMF) in the Flawn Academic Center.
During open hours, at least one proctor is available to assist you with technological questions. Feel free to ask questions of proctors concerning technical issues, such as how to use specific software or hardware. Keep in mind that some instructors may have you use software or hardware with which not all proctors are familiar; in this case, your instructor will have to provide the technical support. All proctors do, however, have a general knowledge of most of the software and hardware used in DWRL classes. But proctors are not writing tutors. For questions about writing go to the the Undergraduate Writing Center on the second floor of the Flawn Academic Center (FAC).
You can find out more information about Open Lab and its operating hours here.


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Session Y16: Magnetic Theory II
8:00 AM–11:00 AM, Friday, March 22, 2013
Room: 318
Sponsoring Unit: GMAG
Chair: Khorgolkhuu Odbadrakh, Oak Ridge National Laboratory
Abstract ID: BAPS.2013.MAR.Y16.9
Abstract: Y16.00009 : Numerical simulation of 2D ferromagnetic films with perpendicular magnetic anisotropy using a hexagonal lattice and a long range RKKY interaction potential
Preview Abstract MathJax On | Off Abstract
Zachary Howard
(Rochester Institute of Technology)
Michael S. Pierce
(Rochester Institute of Technology)
A numerical $\varphi^4$ model combined with a RKKY potential was used to simulate 2-D ferromagnetic domains. A small random field component was added to allow for a controlled amount of disorder to be introduced into the system. A hexagonal lattice allows for more realistic domains patterns than a square lattice due to the higher density of lattice sites compared to the conventional square lattice. We find that appropriate regions of parameter space produce realistic domain patterns, major hysteresis loops, and reversal curves. For parameters that produce regions of rapid nucleation and growth we observe reversal curves that can extend outside the major hysteresis loops, due to highly frustrated domain configurations as recently observed by Ref. [1]. We also observe a significant region of exponential dependence of the domain spacing upon the interaction potential. Future work will include increasing the random field contribution to determine if the dependence of the domains and hysteresis loops upon disorder matches experimental systems [2].\\[4pt] [1] J.E. Davies et al., Appl. Phys. Lett. 95, 022505 (2009).\\[0pt] [2] M.S. Pierce, et al., submission to Phys. Rev. B
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2013.MAR.Y16.9


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* * *This position is for 10 months per year. Work months are approximately from August thru May * * *
The Nurse Practitioner working under the supervision of a collaborating physician provides primary care to students by assessing and managing routine acute/chronic problems and performs routine health prevention care, while consulting with the appropriate medical staff when further consultation is warranted. Responsibilities include; obtaining health history and performing physical examinations, recommending appropriate treatments, prescribing under physician supervision unless has independent prescriptive license, and assisting in the development of nursing and nurse practitioner protocols. In addition, the Nurse Practitioner provides gynecologic care to female students, coordinates follow-up for patients seen, documents clearly and appropriately in medical charts, performs phlebotomy, participates in staff meeting, and promotes health education and illness prevention initiatives throughout the university. Perform other duties as assigned.
Required Education and Experience:
B.S.N. with a Master's degree in nursing, and must be licensed and certified as nurse practitioner in the state of Pennsylvania with a minimum of three years of directly related experience. An equivalent combination of education and experience may be considered.
Required Skills and Abilities:
*Must have the ability to travel to other campuses to render care as needed.
*Ability to use all standard office equipment, and software including MS Office.
*Ability to use the following equipment: stethoscope, otoscope, ophthalmoscope, blood pressure cuffs, pelvic exam instruments, culture swabs, syringes, needles, test tubes, vacutainers, butterfly syringes, and other supplies.
*Must maintain continuing education requirements for licensure, and remain up-to-date in area of practice.
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*Experience in college health, woman's health care, family practice or emergency medicine.
To apply for this position, and view other Temple opportunities, please visit our website at www.temple.edu [1], and click on Careers @ temple. Please apply to Requisition # TU-16221 AA, EOE, m/f/d/v.


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|132 posts found
I really like the game, i've just started not logging in normally etc. It's getting boring.... I've seen what the content has to offfer, having 5 50's..
Yes i've done BC up to turn4, I've done crafting classes and Land classes (50 mining was worse than fishing by far) I've got a paladin in DL with relic+1. Great character and a lot of time was spent on him. I'm simply just loosing interest. End game is the same thing. Crafting is the same just with different materials. DoL's are the only thing i found fun personally.
Anyone else in my situation?
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Novice Member
Joined: 6/26/13
"I thought what I'd do was, I'd pretend I was one of those deaf-mutes.
[mod edit]
I was thinking the same thing. Five 50's? Dude, I have been sick and I don't have one. Other things to do man!
Hard Core Member
Joined: 2/11/11
Originally posted by Whiskeydust
Are you my long lost brother? lol
[mod edit]
So, back on topic, yes 5 50's and soon another(non legacy player) Some may say i've burnt myself out but that isn't my fault, it's the games for not offering enough content. Running AK 8 times a week and doing coil once a week get's old. Don't even want to get started on the 1-2-3 crafting.
At least the graphics are nice
Advanced Member
Joined: 11/10/05
Are you saying there is not enough content for anybody or just speaking for yourself?
Advanced Member
Joined: 11/10/12
This is ridiculous. I don't see anyting in this game to justify a sub. But I have to say spending so much time in the game and then complaining you are bored, really? There is no game that would satisfy this poster considering how he lives in these games. I can't blame the game on this one.
Apprentice Member
Joined: 1/12/07
Originally posted by Foreverdream
Before people start flaming you "WHY DONT YOU GET TURN 5 DOWN THEN!" let me just say... turn 5 is a content gate created by SE. Watch the videos, it's actually IMPOSSIBLE to legit beat without glitching. They could have fixed it a month ago. The fight has been taken down (and it's currently off as I type this).
Now to your points...
I have 2 level 50's a avg ilvl 80 pld (6 ilvl 90 items, only 2 are allegan). I have been server top 3 (with 3 different groups) on 1-2-3-4 coil on my server. I have 50 mining and a few crafts 10-25 range. I clear coil up to turn 5 on a monday night (within 2 hours unless someone has to go early).
I feel your pain. I just last night got my blackmage relic staff and felt not one sense of accomplishment from it. Relics are a joke. You can get a relic within 2 hours if you have the philo tomes. I was sitting on 1900 tomes and had nothing else to use them on, so I got it.
"Level another job!"...
I find no point in gearing up/leveling other classes as the game currently stands. I will never ever be able to go to (nor do I want to) coil as anything but my main job (paladin). People get allegan gear for their main classes, and spend myth tomes on those classes. I would be gimping myself and my group if I (or someone else) came as something they haven't put myths/allegan into. What's the point of all ilvl70 hq'd gear 5x materia when I'm just using that job to run ak's?
"Level up a craft!"...
Why? The bubble has started to burst on profits from crafters. 2 star item HQ's net 20-30k profit (When they sell). I'm sure you can still make good money doing melds... but a ton of people have 50 crafts now so the "competition" for melds is very high. I suppose once housing comes out there will be an influx of gil back into crafters, but it's too early to make an assumption on potential profits with that one.
"That's what you get when you rush content!"...
I didn't fate grind to 50. I wasn't one of the first 50's on my server (non-legacy). I hit 50 august 30th and I only know that because I took a screen shot. I hit 50 and have really enjoyed the game/grind up until a week or so ago.
Do I regret my 3 month subscription? Very much. The unknown date of 2.1 (most think late december) has me sort of irritated. I'll have to resub again just to get into most of that content. But then again if the pvp doesn't pan out (this is a PVE game) I'll have crystal tower to do right? Oh wait... that content is for people who just got relics and darklight gear. By then I'll be full myth/allegan.
Turn 5 is still going to be the hardest battle in the game for another 5-6 months. Over 100 groups are at the same point in turn 5 with the gate that SE created and hasn't fixed (imo on purpose) already, what will be the case by the time 2.1 actually comes out?
Sooo yes OP. I feel your pain.
edit:[mod edit]You guys don't understand after you get your first 50 and do fates the exp just rolls in. You can get a 50 battle class in a weekend just by doing fates.
Originally posted by Blazeyer
Yup, glad you understand where i'm coming from on this, after the first 50, the next ones come easier, the fate grind is boring as hell, and like ya said, we can't do turn 5 because SE has it blocked off currently. Doing the same thing i've been doing for about a month now has really gotten stale. I too took my time on my first 50, was not the first by a long shot, i did like the story line a lot though.
I really hope teso doesn't fall into the same gear wheel as FFXIV did.
I'm in the same boat myself. Warrior at 50, paladin 38, mining and black smithing around 24 each. End game got repetitive really fast(and gathering/crafting is mind numbing at best). Taking a break until 2.1 which will hopefully bring enough new content to get me to play again.
Apprentice Member
Joined: 1/11/13
Originally posted by Foreverdream
This old chestnut again , It really puzzles me that dev's make games this short these days. I said a few weeks ago that ESO would be as short as SWTOR , I never thought FF would be too. Why don't game dev's make enough content to last 8 months but upon release just give the user about 50 levels to play with , then bam when they look at the metrics of people at max level add the next layer of massive content say 40 levels more and so on. It's not difficult. End game obsession isn't just a user wide thing , the dev's seem obsessed with it too.
In PSO v2 and PSO episode 1 and 2 on the DC and GC respectfully. You could basically get to about level 100 - 110 in say 6 weeks or even a month , but to then get to level 200 would take at least 4-8 months. Why change something great ?
Tl;Dr - MMO's are too short these days , not all of us are obsessed with end-game.
PSO 4 years , EQOA 4 months , PSU 7 years , SWTOR launch ongoing , PSO2 SEA launch ongoing , Destiny 360 launch ongoing.
Novice Member
Joined: 4/22/06
You're approaching MMOs the wrong way. Yes people ahve different play styles, but you're just playing through this game like hot lava through butter. How about taking the time to make friends and hang out with them in the game. Determine common goals and go out and explore together and see what you can find all while chatting.
Most of you MMO players just go through the content without even caring about it. You just click away and then go where the markers tell you to and kill what you're told to killed not having fun at all in the process, just trying to get a reward that will make you feel better for a brief time. The fun in an MMO comes from interacting with each other. The problem is that MMOs are enabling these anti social behavior. They no longer require you to team with people so no one bothers unless they're already friends. Back when games required teaming up, people would actually get along because they had to and thus had more fun because they were sharing an experience.
A game like Guild Wars 2 is the perfect example of an anti-social game. It no longer requires you to team up. You just ignore who ever is fighting beside you because the game automatically shares the xp and items for you. No need to talk to anyone through the entire game. All these MMOs are single player games and MMO players just keep playing them that way never seeing the problem.
Novice Member
Joined: 7/22/09
I say cancel your, sub take a month off, and come back when 2.1 is released and see how you feel about it then. I see nothing wrong with doing this you have done just about everything you can do for now so it won't hurt taking a break and coming back later. PVP should really help people who have content burnout.
Apprentice Member
Joined: 3/14/12
Enjoyed the game a lot during first lvl 50, by the time i was leveling second boredom set in and i started looking at things more objectively. End game is another issue which completely discouraged me from playing further. I lasted one month in game which isn't bad for a themepark fast food MMO.
"The problem is that the hardcore folks always want the same thing: 'We want exactly what you gave us before, but it has to be completely different.'
"Online gamers are the most ludicrously entitled beings since Caligula made his horse a senator, and at least the horse never said anything stupid."
Advanced Member
Joined: 12/23/07
Originally posted by Foreverdream
FF XIV didn't have one 50 worth of compelling content to me much less 5 so you got a lot farther than I did. Regardless it sounds like you have reached that point where you either shift your focus away from character development and to social aspects of the game or you walk away.
Hard Core Member
Joined: 10/11/06
You exhaust everything the game has to offer or outright skip most of it, and as the result you become bored of the game.
Really, there's nothing wrong with this. I just don't see the reason to come in here to tell us about it.
Yes, many people play MMO's in a way that doesn't really offer them much enjoyment in the long-term. They have the right to do so and SE is right to offer these people the opportunity to do so. But let's not act like this is anyone's problem but the person's in question. Because it isn't. If the players are enjoying themselves and SE is getting their investment's worth then it doesn't matter in the slightest. And even if it did, there's nothing SE can do if the players skip most of the game or play such staggering amounts of time that no company can deal with it.
FFXIV (or any MMO, really) is only a fast-food themepark experience if you make it one. And in most cases you only make it one when you didn't really want to play the game in the first place, but merely a tiny portion of it.
"Housing is standard in most mmo's."
It's funny some of you say, oh you just burn through content and forgot the social aspect!!1!
Not true, Last time i check BC isn't pugged, not on my server at least, I'm in a FC and talk to them daily, If i want a glorified chat room there is a lot better options out there.
explore? They took that out with 1.0. The zones are so small now, not like before. Exploration was fun in 1.0 ARR killed "exploration" Besides i have mapped the entire game...
Im sure the ones defending the game will see it the same way i do in due time.
Advanced Member
Joined: 11/10/05
Is that what this is about?
Good luck in your future gaming endeavors. Maybe come back and check out this one when they add more stuff. I think its a great foundation for a long term mmo. OF course your mileage may vary.
Novice Member
Joined: 4/24/09
And once again we see some serious delusion on what makes the average "casual" player. Forget about expansions, the average player will not have close to being done with everything in 3-4 months. I play somewhere in the neighborhood of 20-25 hrs per week, have 1 lvl 50 (A Culinarian), and still have a ways to go on the main storyline. And while I'm sure that sounds super casual to many of you, that is still probably above average for the typical player.
For those of you that have burned through all the content and are getting bored, I'm not going to blame you, or say you are playing the wrong way. As I have said many times here, people are entitled to play how they like. But you are deluding yourself if you think you are the main target audience for this game.
Novice Member
Joined: 12/31/04
Some folks are like Slinkies, totally useless but great fun to watch when pushed down stairs
Originally posted by Foreverdream
I hope TESO is decent too...
Apprentice Member
Joined: 10/24/12
Originally posted by Foreverdream
i have to say im glad i dont suffer from this. I have a job that allows me to play on my laptop, discretly of course, but even then i only put about an hour maybe 2 a week into FF14. currently im on my first character at level 19, same character ive had since release day. I take my time and honestly every time i play its exciting because theirs always a ton of content for me.
I would suggest delete your characters and cancel your sub and take a break from the game for a month or two and enjoy other games. If your into FPS games i strongly recommend Arma 2 Combat operations with the ACE, ACEX, and ACRE mods, and Arma 3. Next time you re-sub moderate your game time. You seem like the kind of player who chews through content very rapidly and thats not a good time.
FYI ive only ever maxed out one Character in my entire MMO career. And ive been playing since the launch of Ultima online. People complain of lack of content? i can go back to any older MMO and their will always be tons of hours of Content for me.
EDIT: probably doesnt help that i spend most of my time in roleplaying lol. but every one has there own play style.


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GRAND RAPIDS, MICHIGAN (April 15, 2009) –
April 15, 2009 - E.P.I.C, Aquinas College's Environmental Political Interactive Change club, will host a town meeting at 2 p.m. on April 18, 2009 as a part of a nationwide campaign called Focus the Nation. The meeting will be held in the Jarecki-Lacks Center on the Aquinas campus, adjacent to the Woodward parking lot at 157 Woodward Lane SE. The event is free and open to the public. >>Download AQ Campus Map (pdf)The Focus the Nation campaign concentrates on clean and just energy alternatives as well as other environmental concerns related to clean energy. Currently, the main effort is to encourage Congress to pass bold national policies that will help solve the climate crisis, create jobs, and make the United States transition to a clean energy economy.The town hall meeting will consist of 3-5 panelists with specialties in business, academics/science and organizations/nonprofits and political leaders speaking on topics that E.P.I.C believes to be particularly relevant to citizens of Grand Rapids. Topics of discussion will be water issues, including Governor Granholm's proposed cut for protecting Michigan's wetlands, coal fired power plants and alternative energy and the proposed Silver Line bus that will run through Grand Rapids parallel to US-131. The panel will speak on each topic and will answer questions from the public.Tentative panelists include Aquinas professors, business owners from the Grand Rapids community and local politicians. Mayor George K. Heartwell, Grand Rapids city commissioners and Congressman Vern Ehlers will also be in attendance.This event is a collaborative effort between Aquinas College, Grand Valley State University and the Grand Rapids community.For further information or questions, contact Jessica Spagnuolo at email@example.com.


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Updated at: 11/19/2013 11:05 PM
(AP) NASHVILLE, Tenn. - Kelly Clarkson says she's expecting her first child.
The 31-year-old singer said Tuesday on Twitter that she and husband Brandon Blackstock are expecting their first child together.
The original "American Idol" champion says in her tweet that the baby is the "best early Christmas present ever."
Clarkson's publicist, Mika El-Baz, later confirmed the information.
Clarkson and Blackstock were married last month. Blackstock is the son of Clarkson's manager, Narvel Blackstock, and the stepson of Reba McEntire. He manages country star and close Clarkson friend Blake Shelton.
Blackstock has two children from a previous marriage. No word on when the baby is due.
(Copyright 2013 by The Associated Press. All Rights Reserved.)


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Okay I just saw Martha's Apprentice and their is NOTHING different between hers and Donalds! What is NBC thinking? well with that being said, who would you prefer to watch?
Martha Stewart's
Donald Trump's
Both Donald & Martha's
None of theirs
Okay I just saw Martha's Apprentice and their is NOTHING different between hers and Donalds! What is NBC thinking? well with that being said, who would you prefer to watch?
neither one, I do not like the bad hair on either one of them !
LOLOriginally Posted by hakuna makarla
I also don't like Martha's (Stands up, gets dressed like martha, poses like martha in a non prison but very british way, and begins to speak like martha) "rich accent". (Smiles like Martha, then takes a sip of coffee, and sits down in a patient, yet freakily disturbing manner)
And I want to take donalds hair and shave it off. it is to freaking weird! And that red color, oye, it hurts my eyes!!Originally Posted by Disney Wrassler
I loathe martha....I used to watch donald, but it's all the same now...boring...
Neither, Donalds hair frightens me, Marthas faux kind personality and smiles freak me out equally the same.
Both, but only because I like the train wrecks of reality tv shows. I never really watched Martha on anythign before, but, boy is she bland. I didn't find her to be charming or interesting.
okay NBC striked gold with the first apprentice. But then after that, nothing.
Neither. Except for one thing (his WTC idea) I hate Trump and I find it stange that Martha has this show when she got put in jail because what she did in buisiness. Is that someone you want to model your business life around?
Well, the "catchphrase" is a bit different. Donald says "You're Fired!" while Martha says "You don't fit in. Goodbye."Originally Posted by Disney Wrassler
Yep, that gold mine is running empty. It's season premiere was only watched by 9.83 million people (which is 6.05 million down from last year).okay NBC striked gold with the first apprentice. But then after that, nothing.
You can design and create, and build the most wonderful place in the world. But it takes people to make the dream a reality. - Walt Disney
I watch 'em both. i'm addicted. What can I saty?
Good morning, son
In twenty years from now
Maybe we'll both sit down and have a few beers
And I can tell you 'bout today
And how I picked you up and everything changed
It was pain
Sunny days and rain
I knew you'd feel the same things...
Neither. I liked the first Apprentice but that's it. Plus Donald and Martha annoy the heck out of me.
I don't really watch reality shows anymore... Now that I have seen what really goes on. Not to say it isn't real it's just there are many takes and then editing.
TLC life unscripted, yes but they sure know what questions to ask. 10 yrs younger in 10 days...NOT try 2 months.
aka Sara
One of my childrenisn't pictured,
ABE is still hibernating
bleh...i'm so over reality shows.
I gave Donald a shot (be it only occassionally) during season one, but haven't watched since. I just don't see how the premise can continue to be effective or amusing once it's already been done. I would expect to see major changes soon. Martha got her butt kick last week by Lost, so she will either be gone soon, or at least exiled to another night to finish out her time. I heard somewhere last week that she wasn't Donald's first choice for the show. If i recall correctly it was originally Richard Branson that he wanted to do a second version of Apprentice, but then another network gave Branson his own copycat show so Trump had to look for someone else.
I watched both of them. Didn't like Martha. So I'll stick to Trump only.


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Rachel Denny Clow/Caller-Times Rosita Brosig, a fourth-grade teacher at West Oso Elementary School, wipes away tears as one of her students tells her how she made a difference in her life during a candle ceremony at the school in May. It was the final day of Teacher Appreciation Week.
Rachel Denny Clow/Caller-Times Evans Elementary School students Tanya Sorola, 9 (from left), Deyanira Simms, 9, Alvaro Jimenez III, 11, Winnie Johnson, 6, release doves at the conclusion of the school's Peace Walk last January. The students were winners in their grade levels for essays on the topic of peace and classroom projects. The event was a way to help the school teach students about Martin Luther King Jr. Day.
Rachel Denny Clow/Caller-Times Chris and Megan Waters get married in the mouth of a papier-mache shark at Palace Beachwear and Gifts on North Shoreline Boulevard in February. The couple said the wedding was a chance for them to do something just for them.
Rachel Denny Clow/Caller-Times A family of ducks, including 14 fledgling ducks, was found in a pool in the backyard of Gretchen Arnold and Robert Ball on Atlantic Street in June. They said they weren't sure how the ducks managed to get into their fully fenced backyard.
Rachel Denny Clow/Caller-Times Jack Prentiss shows off an owl butterfly last January, which is one of the butterflies in his collection he donated to the South Texas Botanical Gardens and Nature Center.
Rachel Denny Clow/Caller-Times Avery Skoglund, 4, holds a butterfly while another one rests on her flower bow in March during a butterfly release in honor of the opening of Carolyn's Corner at the library for First Baptist School and First Baptist Church. Avery's family attends the church as will be one of the children who gets to use the new children's area in the library.
Rachel Denny Clow/Caller-Times Susie Ramos leans against a tree dedicated to her son, Johnny Joe Ramos, with his daughter Jelina Ramos, 9, after a dedication at Tuloso-Midway High School in September. Johnny Joe Ramos was struck and killed jogging near the high school.
Rachel Denny Clow/Caller-Times Patrick Smith was one of more than 430 riders in the South Texas Trail Riders 54th annual Trail Ride from Edroy to San Antonio. Hundreds of members converged in Edroy on Jan. 31 to get a few hours sleep before a 5 a.m. wake up, aka cattle call.
Rachel Denny Clow/Caller-Times Moody's Brandon Cantu cries after losing the 4A state championship game against Tomball at Dell Diamond in Round Rock on June 7, 2013.
Rachel Denny Clow/Caller-Times Donald Harris, the business manager for the Corpus Christi Cathedral, makes ashes in February that are used in Ash Wednesday services. Ashes are made from palm fronds used on Palm Sunday. The ash is placed on the forehead at the beginning of Lent.
Rachel Denny Clow/Caller-Times/Instagram A brown pelican takes flight from a marker in Baffin Bay in August.
Rachel Denny Clow/Caller-Times A hummingbird sucks nectar from a plant at the South Texas Botanical Gardens and Nature Center in September.
Rachel Denny Clow/Caller-Times Amy Nickle picks up trash at Lindale Park in July. It was the first park cleanup held by A Clean Generation, a group focused on environmental activism. The group plans to hold a park cleanup once week at parks throughout the city.
Rachel Denny Clow/Caller-Times Kaitlyn Naquin, 12, learns guitar cords while participating in Chicas Rock, a one-week girls only music summer camp, in July. Girls participating in the camp get instruction in drums, keyboard or guitar.
Rachel Denny Clow/Caller-Times Julian Olalde says a prayer for a friend he lost to breast cancer in 2006 during the First Friday's annual Inter-Faith prayer service and breakfast at First United Methodist Church in January. The service included representatives from several area religious faiths as well as a speaker who is a survivor of breast cancer.
Rachel Denny Clow/Caller-Times An owl sits in a transitional cage at the Texas State Aquarium in October. The owl was rescued as part of the Second Chances Wildlife Rehabilitation Program and is being conditioned to be released.
Rachel Denny Clow/Caller-Times Jerry Madrigal waits to meet with Dr. Narain D. Mangla on Wednesday, Feb. 20, 2013 to assess his need for a kidney transplant.
Rachel Denny Clow/Caller-Times Volunteer Ethan Harvey, 17, a member of the National Honor Society at Aransas Pass High School, takes a break in May among bags full of T-shirts, programs, coupons, batons and other items for runners participating in Beach to Bay.
Rachel Denny Clow/Caller-Times A Santa Cruz heifer (mix between Red Angus and Santa Gertrudis cow) munches on grass at King Ranch in April 2013. The King Ranch has two calving seasons, one in the fall and spring. The gestation period is similar to a human and usually one calf is born to a heifer at a time.


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According to the governing body, Bennett has breached FA Rule E3 - Use of abusive and/or insulting and/or threatening words in comments posted on a Twitter account.
He has until 4pm on Friday 26 April to respond to the charge.
Bennett, who joined the Canaries from Peterborough in January 2012, netted the opener in Saturday's 2-1 win over Reading.
He is understood to have been involved in exchanges with supporters on the micro-blogging site following Norwich's recent 3-1 defeat at Arsenal.
Norwich have already announced an internal investigation into the matter. Bennett's Twitter account has since been deactivated.


text: SeaWolves Bowling Bash (7-24-13) 07/25/2013 12:58 AM 07/25/2013 01:01 AM 2nd Annual Bowling Bash Attracts Crowd SeaWolves players and fans joined together at Greengarden Lanes for the 2nd Annual SeaWolves Bowling Bash. The event raised money for United Way of Erie County. Copyright 2013 Nexstar Broadcasting, Inc. All rights reserved. Page: [[$index + 1]] sports sports connection top stories


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Only hotels in 29511 zip code are listed below. Search for cheap and discount hotel rates in Aynor, SC for your upcoming leisure or conference / group travel. We list the best 29511 hotels and motels so you can review the Aynor hotel list below to find the perfect lodging. Hotels in Horry county and area code 843 are also listed.
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|Comfort Inns Buena Park hotels are listed below. Search for cheap and discount Comfort Inns hotel rates in Buena Park, CA for your upcoming individual or group travel. We list the best Comfort Inns Buena Park hotels/lodging so you can review the Buena Park Comfort Inns hotel list below to find the perfect place.
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Tyrone McKenzie
Position: LB
Height: 6-2 Weight: 244 lbs.
Born: December 11, 1985 in Queens, NY
High School: Riverview
College: South Florida (school history) (McKenzie college stats)
Drafted by the New England Patriots in the 3rd round (97th overall) of the 2009 NFL Draft.
Weighted Career AV (100-95-...): 1 (12808th overall since 1950)
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Output includes all games from 1920 to 2014.


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A new circulating bus route in Elkin is gaining traction, and it only costs $1.
YVEDDI started the Elkin Circulator bus, which makes a loop around Elkin every hour. The exact route is currently being accessed by YVEDDI, as they continue with efforts to develop the most practical way to expand its services and help the community.
"We start at the municipal parking lot in downtown Elkin and travels up Main Street to Johnson Ridge Road," said coordinator Mitzi Hutchens. "We proceed to Walmart, then back to Food Lion, Goody's, the Elkin Center of Surry Community College, Colonial Village, and back to Town Hall.
"It's a continuous loop," said Hutchens, who indicated some people are even using the bus to go back and forth to work.
Community transportation is one of many services operated by YVEDDI, a private non-profit corporation designated as the local Community Action Agency for the four counties it serves; Yadin, Wilkes, Surry, Davie. In addition to transportation, YVEDDI also provides services in the areas of education, health and nutrition, support for victims and prevention of domestic abuse, and weatherization.
The Circulator also meets up with the Connector bus which goes to Dobson (community college) and then up to Mt. Airy (only $2 each way) three times per day.
For exact locations and to pinpoint the exact time the bus will be near your neighborhood, The Tribune recommends that you call YVEDDI at 679-2073. The Circulator is still a pilot program in development.
YVEDDI officials say that the organization director of transportation's, Jeff Cockerham, is strongly looking at reaching residents of neighboring Jonesville.
"If that bus can take me to Walmart so I can do a bit of shopping, just sign me up," said Angela White, a retired teacher who is new to Jonesville.
The Circulator starts at 7 a.m. from Monday through Friday with the last run at 5:30 p.m.
Reach Anthony Gonzalez at 835-1513 or email at firstname.lastname@example.com.


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|Posted by email@example.com on September 1, 2012 at 9:45 PM
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Ordinarily internet sites are named following the individual who performs on it, but with Abby Winters we have now a web-site named following the woman who developed it. And i do have to state that this girl justifies lots of praise!
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True Blood
True Blood Season 6: Major Character's Dad Is a New Series Regular
Looks like Alcide will get a lot more quality dad time in Season 6.
Deadline announced this morning that Robert Patrick has signed on for True Blood's sixth season as a series regular, meaning we'll see his character, werewolf Jackson Herveaux, in nearly every episode.
We last saw Jackson as a lone wolf, helping Alcide fend off baby vampires and reclaim the title of packmaster of the Shreveport pack in Season 5.
Robert, 54, is beloved to film and TV audiences as John Doggett in The X-Files, Thomas Ryan in The Unit, and as the T-100 in Terminator 2: Judgment Day. Most recently, he starred in this season's sovereign submarine drama Last Resort until ABC pulled the plug on the show last month.
Source: Deadline
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Typical cronyism - When I was employed by the city in the 60's, I had to take a civil service test and was told that if I failed would lose my job. Yet many City Hall employees didn't even show up for the test and they kept their jobs - go figure
Cronyism never ends. I was employed by Syracuse Urban Improvement in the '60's and was told I had to pass Civil service exam or I would lose my job. I passed it, however quite a few people at City Hall never even took exam and they still kept their jobs - go figure that!
What about foreign countries burning US Flag? Do they apologize?
So sad to hear about stolen pumpkin. Years ago when my kids were little we grew pumpkins in our garden and we had one big one which we were going to decorate for Halloween. But my kids never got the chance because someone stole it right from our garden. Some people get their jollies from doing stuff like that.
Sounds like dejavu. Quite a few years ago when I was employed by the Syracuse Dept. of Urban Improvment as secretary to Commissioner I was demoted and replaced by a woman who supposedly had a degree in Journalism? I found out later that she had no college degree at all but was politically connected and had moved to Syracuse as her husband was attending medical school. Cronyism hasn't changed in all those years!
If these people think their salaries are too low then quit. There are qualified people looking for jobs who would be happy with the salary! Why should their salaries be raised and yet they can't afford to keep the Ida Benderson Center open - go figure that out!
If they allowed priesrts to be married there would be no shortage.
This guy deserves to be imprisoned for a LONG time. He is a menace on the road.
I guess the same holds true here if you have money and power you can get away with anything. A poor working slob would not receive the same treatment!
What kind of experience does this man have to run the Parks dept. This definitely has a political smell to it.
Libraries are a very important educational tool. They should be a top priority for funding instead of raising public officials' salaries. Where is this country going to?
In regards to Edwards Santa Claus I remember bringing my 4 year old daughter Lisa to see Santa Claus and at that time Frank Runeari was "Santa Claus". (My daughter is now in her 40's) Those were the "good old days"
Do you proofread articles? Check spelling of separate.
Do you proofread articles? Check spelling of separate.
Do you proofread articles? Check spelling of separate.
If they allowed women to become priests they would have no shortage of priests. Women are allowed to be Eucharist Ministers so why no priests.
If they allowed women to become priests they would have no shortage of priests. Women are allowed to be Eucharist Ministers so why no priests.
Congratulations Sean. This award is well deserved by you. I retired to Florida seven years ago and I still enjoy reading your column via the internet. Keep up the good work!


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Tags break up, sad, missing someone
Artists blink-182, Relient K, Incubus
June 17, 2012
Here you will find music to cry to, and some songs to smile to. Either way, they truly express the emotions of heartbreak. Includes artists such as Blink-182, Relient K, and Incubus
Wild At Heart by xcaribbeanqueen3
Some fun country songs to get ready for summer, for the days out in the sun and those late night drives.
summer, country, happy
A Daydream Away by xcaribbeanqueen3
Eleven calm, acoustic tracks that will make you think of that person your mind always goes to when you're left alone with your thoughts.
indie acoustic, soft and calm, thoughtful, folk
My Love Will Be There Still by xcaribbeanqueen3
A random mix of songs that basically describe my summer.
chill, alternative, end of summer, city and colour, mumford & sons
Misery Loves Company by xcaribbeanqueen3
Here are over one hundred songs to be your companion through your pain and struggles.
sad, chill, calm, slow, sleep


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Mac & Charlier Die- Its always sunny in PA
Frank's Charlie manakin
That episode had me rollin....!
Anyone else think Katlin Olsen is trying too hard to be pretty now? She's attractive without trying, but now she's not as attractive as she was in the earlier seasons.
Is Katlin Olsen Dee in the show? If so I would say her personality in the show makes her unattractive to me. Call me weird but thats just what i think.
hahah, charlie pulling out his teethe.... hahahahahah
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Thursday, March 30, 2006
© Copyright 2015 Gwinnett Daily Post
LAWRENCEVILLE - Gwinnett County has hired a new company to run its transit system.Connex ATC will replace McDonald Transit Associates, which has operated the county's crimson buses since they hit the road in 2002. The switch was unanimously approved Tuesday night by Gwinnett County commissioners. "I think it's going to be a significant improvement to the system and save money," said County Commissioner Lorraine Green. Three companies bid for the contract and Connex's $8.4 million offer was not the lowest, but its price combined with its expertise and other qualifications led to it being picked, said Gwinnett Transportation Director Brian Allen. Just like its predecessor, Connex will manage the day-to-day operations of the bus system, with oversight provided by the county and a board of citizens appointed by county commissioners. Connex has plans to add wireless Internet service to the county's buses, said Art Sheldon, who chairs the Gwinnett Transit Advisory Board. For a fee, passengers will be able to access the Internet during their commute, he said. The company also will create a Web site where transit riders can check to see if their bus is running late or on time, Sheldon said. A call left Wednesday with Connex was not returned. Its parent company is based in Paris. The company operates Cobb County's bus system. Its contract there was recently extended five years. "They have done an outstanding job for us," said Cobb Transportation Director David Montanye.
More like this story
- Shelters, with ads, going up at bus stops ( December 27, 2005 )
- Deal puts nine buses on roads ( February 9, 2006 )
- Gwinnett Transit looks at Norcross requests ( January 14, 2006 )
- Transit system to receive more buses ( August 22, 2007 )
- Local transit pursues regional fare card ( April 1, 2006 )