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A method for producing, without etching, a perforated layer of epitaxial metal silicide, especially CoSi2, on a single crystal Si substrate, with epitaxial Si overlying the silicide layer. The layer thickness, and the number and size of the openings in the layer are such as to make the structure suitable as an electronic device, in particular, as a permeable base transistor. The number and/or size of the openings is a function of processing parameters such as the substrate orientation, the annealing temperature of the film, or the Co/Si ratio of the deposited material. A device comprising a perforated silicide layer is also disclosed.
1. A transistor comprising
(a) a single crystal substrate comprising doped Si, the substrate having a major surface having an orientation with respect to the substrate crystal lattice;
(b) a layer of metal silicide in contact with the major surface of the substrate and forming a junction therewith, associated with the junction being a zero bias depletion width W, the thickness of the silicide layer being between about 5% and about 50% of W, the silicide layer having been formed by a process that comprises deposition of metal, or of metal and silicon, or of metal followed by silicon, onto the major surface of the substrate, and annealing of the deposit;
(c) a layer of silicon overlying at least a part of the silicide layer, the layer of silicon comprising doped silicon;
(d) means for making electrical contact to the substrate, the silicide layer and the layer of silicon, respectively; characterized in that
(e) the silicide layer is perforated by a multiplicity of apertures, with silicon, or doped silicon, extending through at least some of the apertures, associated with each aperture being an effective diameter of the aperture, with the average of the effective diameter of the apertures being in the range from about 10% to about 100% of W, with the apertures in the silicide layer having been formed during formation of the silicide layer without use of lithography and/or etching.
2. Transistor of claim 1, wherein an electron means free path is associated with the silicide layer, the electron mean free path at 25° C. in the silicide layer being greater than the thickness of the silicide layer.
3. Transistor of claim 1, wherein the major surface of the substrate forms an angle θ with a (111) lattice plane of the substrate, with θ≲6°.
4. Transistor of claim 1, wherein the device is associated with at least one other electronic device on a common silicon body.
5. Transistor of claim 1, wherein the metal is chosen from the group consisting of Co, Ni, and Pd.
6. Transistor of claim 5, wherein the metal is Co.
7. Method of fabricating a transistor comprising
(a) providing a single crystal Si substrate comprising doped silicon and a major surface;
(b) forming on at least a part of the major surface a metal silicide layer, the substrate with the silicide layer thereon forming a junction, associated with the junction being a zero bias depletion width W, the silicide layer thickness being between about 5% and about 50% of W, at least substantial part of the silicide layer being epitaxial with the substrate, the silicide layer formed by a process that comprises deposition of metal, or of metal and silicon, or of metal followed by silicon, onto the major surface of the substrate, and annealing of the deposit;
(c) forming a layer of silicon on at least a part of the silicide layer, the silicon layer comprising doped Si; and
(d) providing means for electrically contacting the substrate, the silicide layer, and the silicon layer, respectively; characterized in that
(e) the silicide layer is perforated silicide layer comprising a multiplicity of apertures, with silicon, or doped silicon, extending through at least some of the apertures, associated with each aperture being an effective diameter of the aperture, with the average of the effective diameter of the apertures being in the range from about 10% to about 100% of W, the apertures in the silicide layer formed during step (b) without use of lithography and/or etching.
8. Method of claim 7, wherein forming the silicide layer comprises depositing a metal selected from the group consisting of Co, Ni, and Pd, or of the metal and Si, or of the metal followed by Si, onto the major surface of the substrate, and maintaining the substrate at a temperature in the range from about 500° to about 800° C. for a time effective for producing the silicide layer.
9. Device of claim 7, wherein the orientation of the major surface of the substrate is within about 6° of a (111) lattice plane of the substrate.
This application is a continuation of application Ser. No. 717,649, filed Mar. 29, 1985, now abandoned.
This invention pertains to the field of semiconductor devices comprising an active metallic region, and to methods for producing such a device.
From the beginning of semiconductor device technology, physicists have postulated a host of semiconductor hetercstructures, i.e., combinations of layers of different materials in a single composite crystal. The fascination in this kind of structure is traceable to the large selection of electrical properties thus potentially available to device designers. The early visions of a wide variety of combinations have not yet been realized, and it is now recognized that some semiconductor heterostructures of sufficient crystalline quality for state of the art devices are difficult to produce.
A class of heterostructures comprising a single crystal silicon substrate and an epitaxial metal silicide layer thereon, with epitaxial silicon overlying the silicide layer, has been disclosed in U.S. Pat. No. 4,492,971, and a method for producing such structures is disclosed in U.S. patent application Serial No. 445,014, filed Nov. 29, 1982, both incorporated herein by reference. A ballistic transistor advantageously embodied in a silicon/silicide/silicon heterostructure, with the silicide preferably being cobalt silicide or nickel silicide, is disclosed in U.S. patent application Serial No. 637,061 ('061), filed Aug. 2, 1984, also incorporated herein by reference.
A Semiconductor device, commonly referred to as a permeable base transistor (PBT) was disclosed by C. O. Bozler et al. in U.S. Pat. No. 4,378,629 ('629), also incorporated herein by reference. As described in the '629 patent and in a series of subsequent publications, a PBT comprises a semiconductor substrate, typically GaAs, with a patterned metal (typically W) layer deposited thereon, and with a further semiconductor layer deposited onto the metal layer, with semiconductor material connecting the semiconductor layer to the substrate through apertures etched through the metal layer. The metal layer is patterned by known processes, typically photolithography and subsequent dry etching. Typically, the patterned metal layer comprises metal fingers, with the spaces between the fingers being semiconductor-filled apertures. However, '629 also discloses that other geometries, e.g., comprising holes, are possible, but may not offer the high transconductance-to-capacitance ratio ascribed to the preferred grating structure (see column 14 of '629).
The operation of a PBT is significantly affected by the choice of metal layer thickness and aperture size. As taught by the prior art, the thickness of the metal layer should in the order of 10% of the zero bias depletion width of the semiconductor material, and the width of the slits in the metal layer should be of the order of the zero bias depletion width. For example, for a carrier concentration of 1.1016 cm-3 in the substrate material, a grating consisting of 200 Å thick metal fingers of 2000 Å width, separated by slits of 2000 Åwidth, meets the above criteria.
As can be seen from the above exemplary dimensions, the patterned metal layer has small features indeed, and the production of such a pattern by conventional means is difficult. Furthermore, lithography and etching generally require operations that are not carried out in UHV, resulting in contamination problems. This may increase defect densities.
A metal base transistor of the above described type, i.e., comprising a patterned metal layer comprising a grating, embodied in silicon/silicide/silicon, is disclosed in U.S. Pat. No. 4,488,038. See also A. Ishizaka and Y. Shiraki, Japanese Journal of Applied Physics, Volume 23(7), pp. L499-L501 (1984), where the formation of an embedded monocrystalline NiSi2 grid in silicon is reported.
The mode of operation of a PBT is well known to those skilled in the art and requires no detailed discussion here. See, for instance, C. O. Bozler et al, IEEE Transactions on Electron Devices, Volume ED-27(6), pp. 1128-1141 (1980), and the '629 patent. Briefly, due to the small width of the slits in the metal layer, there exists a potential barrier in the semiconductor material extending through the slits. The height of this barrier can be varied by means of a voltage applied to the metal layer, whereby the flow of electrons between the semiconductor overlayer and the semiconductor substrate can be changed. One of the semiconductor regions is conventionally referred to as the emitter, and the other as the collector, whereas the metal layer is referred to as the base. For the sake of clarity of exposition, we will herein generally refer to the substrate layer as the collector and to the semiconductor overlayer as the emitter, without thereby foreclosing the possibility of a device in which the active regions are reversed, or which otherwise differs from the conventional three-terminal structure.
As is known to the prior art, a possible base configuration is that of a "grid". The minimum dimension of grid openings typically should not exceed the depletion layer thickness. For most practical doping levels, such openings are too small to be produced conveniently by known methods.
A structure which comprises a metal layer that was said to act similar to a very fine grid is reported in J. Lindmayer, Proceedings of the IEEE, Volume 52, page 1751 (1964). The metal base layer in question was reported to be nonuniform, with current flowing through a large number of thin portions (also referred to as "weak" points) of the polycrystalline base layer. K. Ishibashi et al., Extended Abstracts of the 15th Conference on Solid State Materials, Tokyo 1983, pp. 11-14, disclose that relatively thick (100 nm) CoSi2 films grown on Si by solid phase epitaxy often are of poor crystalline quality and often "break", exposing the substrate. See, for instance, FIG. 1 of that reference. These authors also give prescriptions for improving the quality of such films. This reference thus exemplifies the proposition that workers in the field have generally directed their efforts towards producing silicide layers of the highest possible perfection.
Because the characteristics of a PBT depend, inter alia, on the size and geometry of the apertures in the base, it would be desirable to have available a lithography-free method, that allows uninterrupted growth of the heterostructure in clean UHV conditions, for producing an appropriately perforated thin silicide layer on Si, with the openings in the layer having a most likely effective diameter of the order of the depletion layer thickness in the semiconductor. This application discloses such a method, and devices produced by the method.
We have discovered that it is possible to produce, without lithography or etching, by appropriate choice of processing parameters, a layer of silicide on Si, typically CoSi2, of thickness suitable for use in a PBT, that has a substantially predetermined density of openings or perforations, of average effective diameter of the order of the depletion layer thickness in the silicon. We have constructed an electronic device that comprises such a perforated layer and have demonstrated transistor action in such a device.
For instance, we have found that CoSi2, when grown on a single crystal silicon substrate, prepared such that the relevant substrate surface makes an angle θ less than about 6° with a (111) lattice plane, can grow in the form of perforated epitaxial single crystal on silicon. Appropriate choice of processing conditions, to be discussed later, can produce perforated silicide layers of the type discussed herein on substrates of other orientation.
A device according to the invention typically comprises an epitaxial doped Si region (the emitter) atop the epitaxial perforated base silicide layer, with columnar silicon from the emitter extending through the perforations in the base to the single crystal doped Si substrate (the collector). The thickness of the silicide layer is advantageously between about 5 and 50% of the zero bias depletion width of the semiconductor, the apertures in the silicide layer advantageously have a most likely effective diameter in the range from about 10 to about 100% of the zero bias depletion width, and the perforated silicide layer is produced by a process that does not comprise etching of the silicide layer, to thereby produce the apertures in the silicide layer. Instead, the apertures are naturally produced during growth of the heterostructure. The inventive process thus comprises a departure from the general spirit of the prior art, in that it deliberately produces a structurally nonhomogeneous silicide layer.
Since CoSi2 can have a relatively long mean free path, it may be possible to construct devices in which part of the collector current is transmitted ballistically through the silicide, and such hybrid devices are contemplated by us to be within the scope of this invention.
FIG. 1 schematically depicts a portion of a heterostructure according to the invention;
FIG. 2 shows schematically and in cross section an exemplary three terminal device according to the invention; and
FIG. 3 shows a schematic model for electron transport in a hybrid device according to the invention.
In the broadest sense, the invention is an electronic device comprising a composite structure, the structure comprising a single crystal Si substrate, a perforated silicide layer overlying the substrate, and crystalline Si overlying the silicide layer and extending through the perforations, and an etch-free method for producing the perforations. Typically, the silicide is a single crystal, epitaxial with the substrate, and, at least in currently preferred embodiments, the silicon overlayer is single crystal epitaxial with the silicide. The device may, in principle, comprise further layers, including a further silicide layer, but the discussion herein will be in terms of a three-level structure only. The device can be n-type or p-type, i.e., emitter and collector can be doped to have either n-type or p-type conductivity, with the doping levels in emitter and collector not necessarily equal.
A quantity that is significant for a description of the invention is W, the zero bias depletion width of a semiconductor. It can be approximately determined by the expression ##EQU1## where εS is the semiconductor permittivity,
Vbi is the built-in potential of the junction,
k is the Boltzmann constant,
T is the absolute temperature,
q is the electron charge, and
Nb is the net acceptor or donor density, as appropriate.
A central aspect of the invention is the requirement that the silicide layer (the base) be perforated, the openings extending through the layer. In at least some cases, the aspect ratio of the openings is of order 1 (i.e., 0.1≲ dmin /dmax ≲1, where dmin and dmax are the minimum and maximum diameters of a typical opening, respectively). However, some growth conditions may result in formation of more elongated apertures, including strip-like apertures.
The disclosed method does not result in openings of uniform size, but rather in pinholes having a statistical size distribution. We currently believe that D, the average effective diameter of the openings, can be substantially controlled by appropriate choice of substrate orientation and/or processing conditions, as will be discussed in more detail below. The spread of opening sizes, measured by the variance θ, frequently is such that σ/D <0.25, i.e. about 95% of all openings have an effective diameter within about 50% of D. Methods for determining the average value of a parameter of a distribution are known to those skilled in the art. The "effective diameter" of the apertures herein is twice the distance from the potential minimum in the aperture to the nearest edge of the aperture.
The perforation area density Ap =1-As (where As is the area fraction of the base that is silicide) is, for a given silicide thickness, a function of substrate orientation, annealing temperature, and deposition ratio of Co and Si, and possibly of other processing conditions. For practical reasons, the useful lower limit of Ap is currently considered to be about 0.01, and the useful upper limit about 0.5. Ap 3/80.5 is believed to result in impractically high base resistance. We currently believe that films having perforations within the useful range of Ap can, inter alia, be produced on substrates having a growth surface oriented to within 6° from (111). The details of the aperture distribution can be varied by appropriate choice of processing conditions. Although it is not necessary to use a "misoriented" (i.e., not parallel to (111)) substrate, we currently prefer such substrates, since we believe that their use results in perforated films having a more uniform distribution of aperture size.
We currently believe that formation of a perforated silicide layer according to the invention requires existence of a moderate lattice constant mismatch between Si and the silicide. Such mismatch exists in the Si/CoSi2 system, and CoSi2 is currently the preferred silicide. However, it may be possible to produce perforated silicide layers with mixed silicides (e.g., of composition xCoSi2 +(1-x)NiSi2, 0<x<1), or with silicides other than cobalt silicide (e.g., nickel silicide or palladium silicide).
The prior art teaches that the base layer thickness of a PBT should be of the order of 0.1W, and that the width of the openings in the grating should be of the order of W. Similar requirements apply to the inventive device, with the silicide thickness advantageously between about 0.05W and about 0.5W, and D advantageously between about 0.1W and W.
This choice of dimensions results in a structure in which the current through the Si columns extending through the openings in the base can be controlled by changing the potential barrier height in the columns, and in which such potential barrier control is possible over a relatively wide range of VE, the voltage between emitter and base.
FIG. 1 schematically shows a portion of a heterostructure according to the invention, with silicide layer 11 overlying Si single crystal 10, and Si crystal 12 overlying 11 and extending through openings 14 in the silicide layer to the underlying Si. Layers 13 and 15 serve as means for making electrical contact with the emitter and the collector of the heterostructure. Means for making electrical contact with the base are not shown.
FIG. 2 shows schematically and in cross section a simple exemplary transistor structure according to the invention. A mesa 21 is formed in p-type Si substrate 20, with a cobalt silicide layer 22 of appropriate thickness (e.g., 100 Å) thereon. Layer 22 has perforations 23, with silicon columns extending from p-type Si overlayer 24 (exemplary thickness 0.25 μm) through thereby connecting the emitter with 21. Contacts 25 and 26 serve for making electrical contact to emitter and collector of the PBT, and base 22 can be contacted by means of point contact 27.
FIG. 3 schematically depicts the potential distribution in a n-type device according to the invention, showing equipotential lines 36. A forward bias VE is applied between emitter contact 30 and base 31, and bias Vc, between 31 and collector contact 33, serves to reverse-bias the base-collector junction in the conventional manner. The equipotential surfaces close to the base layer have a "dimple" in the region of the opening, indicating the presence of a finite potential barrier between emitter and collector. Electrons 34 can flow through the Si column if they are sufficiently energetic. For VE =0 the net flow of electrons is zero, but for VE <0 the flow from emitter to collector increases approximately exponentially with decreasing VE. Space charge limited operation is expected to occur if the emitter potential approaches the zero-bias barrier height in the opening. The behavior of the inventive device is thus qualitatively similar to prior art PBTs. However, due, inter alia, to the use of smaller openings in inventive devices, the operating characteristics of such devices resemble those of a bipolar transistor, in distinction from the more FET-like characteristics of prior art devices. The unique ability to control the zero-bias barrier height through choice of growth conditions permits a tailoring of the device operating characteristics. We believe that it may be possible to simultaneously achieve a very high transconductance as well as a large common emitter current gain (β) in inventive devices.
In preferred devices the silicide is a single crystal, epitaxial with the Si substrate. By this we mean that at least one crystal lattice direction [hkl], e.g., [111], in a substantial fraction of the overlying material is essentially parallel to the [uvw] crystal lattice direction in the substrate. In preferred embodiments, the Si material atop the silicide layer is epitaxial with the silicide.
As was disclosed in the previously cited patent application '060, the electron mean free path in CoSi2 can be exceptionally long, making possible manufacture of ballistic electron devices in which the thickness of the silicide layer is less than the electron mean free path in the silicide at 25° C. Use of silicide having such long mean free path in devices according to the invention may result in a novel hybrid device in which a part of the collector current is injected into the base (the metal injection (MI) current), with a fraction thereof being transmitted ballistically across the silicide layer, and part flows through the columns of Si connecting emitter and base (the semiconductor transport (ST) current). This is schematically indicated in FIG. 3, where arrow 34 refers to the ST component of the current, and arrow 35 to the MI component.
Semiconductor devices according to the invention can be used as discrete devices, or be part of an integrated circuit of any desired complexity. In particular, they can be used in a variety of logic gates, in a manner similar to the use of PBTs as disclosed in '629. Potentially, devices according to the invention can be used at high frequencies, with a possible upper limit being an excess of 10 GHz.
The method for manufacturing devices according to the invention is an outgrowth of the method disclosed in '060. Briefly, an appropriately oriented and cut Si substrate is cleaned and prepared by methods well known in the art (A. Ishizaka et al., Proceedings of the 2nd International Symposium on Molecular Beam Epitaxy, Tokyo 1982, page 193), is maintained in a UHV environment (about 10-9 Torr or less) typically below about 100° C., during deposition of metal, or of metal and Si. Deposition can be by any appropriate method, suc as molecular beam or other vapor deposition method, by co-deposition, or by sequential deposition. Although we currently prefer deposition of metal at a low temperature, other conditions are also believed to result in useful perforated silicide layers. For instance, co-deposition of metal and Si at elevated temperature, e.g., about 600° C., can produce such layers. The fluxes are advantageously adjusted such that the deposit is metal-rich.
After deposition of the appropriate quantity of metal, metal and Si, or metal followed by Si, the substrate temperature is typically raised to a final (annealing) temperature, typically in the range 500°-800° C., and maintained at the final temperature for a few minutes, typically less than about 30 minutes. Optionally, the substrate temperature can first be raised to an intermediate temperature (300°-500° C.), and maintained at that temperature for a few minutes (typically less than 30 minutes).
In a typical processing sequence, we deposit about 30 Å of Co onto a doped Si substrate (θ=3°) at 70° C. The rate of deposition typically is about 0.5 Å/sec. However, we believe that the deposition rates are not critical process parameters. Following metal deposition, the substrate is heated to about 450° C. and maintained at that temperature for about 1 minute. Following this optional intermediate temperature step, the substrate is maintained at about 700° for about 5 minutes.
With the above technique, we have produced suitably perforated single crystal CoSi2. Layers produced by this technique were as thin as 50 Å, and we know of no reason why even thinner layers of device quality could not be formed.
Atop the thus produced perforated silicide layer is deposited silicon by any appropriate method. For instance, after raising the substrate temperature to a temperature between about 400° C. and about 700° C., preferably between about 500° C. and about 600° C., Si is deposited until the desired thickness of doped Si is reached. Again, the deposition rate is not critical; we have used rates between about 1 Å/sec and about 10 Å/sec.
By way of example, we have deposited a 2500 Å layer of Sb-doped Si onto an approximately 100 Å thick layer of Co Si2, the substrate being at about 560° C. The Si was deposited from an evaporation source at a rate of about 5 Å/sec, Sb is evaporated from an effusion cell.
Silicon layers formed by the above process can also be doped by ion implantation, followed by an anneal. This and other doping techniques are known to those skilled in the art and require no elaboration.
The areal density of openings in a silicide layer of given thickness (in the thickness range of interest herein) increases with increasing angle θ between the substrate surface and the nearest (111) lattice plane, at least for θ≲6°. A similar relationship may exist for other major lattice planes, e.g., (100).
The areal density is also a function of processing parameters such as annealing temperature and the metal/silicon ratio of the deposit. It is to be emphasized that orientation of the substrate close, but not parallel, to (111) may not be a necessary requirement of the inventive method, and we currently believe that a finite density of openings of appropriate size can be produced also in silicide layers of exactly (111) orientations, and also in layers of (100), or close to (100), orientation.
It is also to be emphasized that choice of processing conditions not only affects the number of openings in the silicide, but also the size, and possibly the shape of the apertures. For instance, we have observed that aperture size increases with increasing annealing temperature. By way of example, in a 90 Å CoSi2 layer (θ=3°, grown from 25 Å of Co, with 50 Å of Si thereon) annealed at 690° C., the average effective diameter of the openings was observed to be nearly an order of magnitude larger than in a similar film annealed at 590° C.
We have also observed that number and size of openings, for a given film thickness, is a function of the metal/Si deposition ratio, i.e., the ratio of the amounts of the two materials deposited, in sequence of metal followed by Si, onto the substrate prior to annealing. In particular, silicide films formed from a Si-free deposit typically have greater Ap than do films formed from a deposit that contains Si (e.g., Co/Si ratio 1:1), and the former films have a larger D than the latter. We currently believe that useful perforated CoSi2 films can result from deposits of overall composition CoSix, 0≦x≲2.
Other processing conditions, e.g., substrate preparation, cleaning, surface roughness, or vacuum conditions, may also affect the condition of the perforated silicide film.
Elevated temperatures mentioned throughout this application typically were determined by means of optical pyrometry, and thus are subject to the known uncertainty of that method. We believe that the temperatures are accurate to within ±25° C.
A wafer of n-type silicon (As-doped, resistivity about 0.07Ωcm, θ about 3°), was cleaned and otherwise prepared substantially as described in A. Ishizaka et al, op. cit.). With the substrate being at room temperature, we deposited in UHV a 22 Å thick layer of Co, followed by deposition of a 44 Å thick layer of Si. The temperature was raised to about 460° C., the wafer maintained at that temperature for about 1 minute, then the temperature was raised to about 600° C. and the wafer annealed at that temperature for about 15 minutes. This resulted in formation of a CoSi2 layer of about 80 Å thickness. After cooling of the wafer to about 80° C., and without breaking of the vacuum, we deposited a 20 Å thick layer of Si onto the CoSi2 layer. After raising the temperature of the wafer to about 670° C., we deposited about 0.25 μm of Sb-doped Si onto the previously deposited Si layer. After cooling below 100° C., we deposited 300 Å of heavily Sb-doped (n+) amorphous Si, raised the temperature to 650° C. for 10 minutes to allow epitaxial regrowth, lowered the temperature to about room temperature, and deposited a continuous metal layer to complete the ohmic contact. Collector contacts were formed by evaporating Sb onto the back surface of the wafer, and laser melting and recrystallizing appropriately located Sb-covered surface regions. This resulted in formation of degenerate contact regions.
The structure was examined by means of electron microscopy. We observed Ap to be about 7%, with D about 800 Å.
We formed mesa structures on the top surface of the wafer by standard lithography and etching techniques. The mesas were basically circular (collector and base, respectively), having about 300 μm diameters, and the top Si layer (emitter) a diameter of about 200 μm. Electrical measurements were made on the mesa-type transistors by a conventional method. From the DC measurements we derived that the device had a common base current gain (α) of about 0.5, and β of about 1.2. Operated as a transistor, we observed an AC (1 MHz) voltage gain of about 10 (common base configuration, load resistance 5000Ω).
A heterostructure is prepared by depositing, onto a n-type Si substrate, (θ=0°±0.5°, about 0.01Ωcm), prepared as discussed in Example 1, at room temperature about 30 Å of Co, raising the temperature to 590° C., for 3 minutes, lowering the temperature of 550° C., and depositing 0.25 μm of Sb-doped Si onto the silicide layer. The remaining processing steps are substantially as described in Example 1. The silicide layer has an areal density of apertures similar to that observed in Example 1.
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text: I ordinarily wouldn't start this thread until much later, but at its upcoming meeting later this month, the Division 1 Women's Soccer Committee is going to be reviewing the RPI. That being the case, here are some of the questions I'm guessing the Committee will consider: 1. Game Location. Presently, game locations show up in the RPI only in the adjustment process for good wins/ties and poor ties/losses. In some other sports (including men's basketball), the "winning percentage" portion of the RPI formula weights games based on whether they are home, away, or at a neutral site. A home win counts as less than 1 win, a home loss counts as more than 1 loss, an away win counts as more than 1 win, and an away loss counts as less than 1 loss. A neutral site win or loss counts as 1 win or 1 loss. The Committee could consider making this kind of change. 2. Bonus and Penalty Adjustments. Once the NCAA computes the "normal" RPI, for some sports it makes adjustments for good wins/ties and poor ties/losses. The adjustment structure and amounts can vary from sport to sport. For Division I women's soccer, the structure has been to award, in descending order of amount, bonuses for wins against teams ranked 1 to 40 in the "normal" RPI rankings, for wins against teams ranked 41 to 80, for ties against teams ranked 1 to 40, and for ties against teams ranked 41 to 80. Within each of those groupings, the amount of the bonus depends on whether the win or tie was away, at a neutral site, or at home. Conversely, the structure has imposed mirroring penalties for poor ties and losses, with the ranking groups being the teams ranked 135 to 205, and teams ranked 206 and poorer. (The penalties for ties and losses to teams ranked 206 and poorer also apply for ties and losses to non-Division 1 teams.) The Committee could consider changing the bonus and penalty structure and/or amounts. Also, in sports in which the NCAA has moved to weighting the "winning percentage" element of the RPI based on game location, the tendency has been to eliminate the bonus and penalty adjustments altogether. The Committee thus could consider doing this. 3. Region and Conference Problem. As I've discussed many times, the RPI has a problem rating teams from different regions and also rating teams from different conferences in a single national system. The NCAA staff and the Committee are well aware of this. To try to address the conference problem, the NCAA has developed the Non-Conference RPI, which doesn't really solve the problem and is significantly less reliable than the RPI as a measure of teams' performance. Although the NCAA never has admitted, so far as I know, that the RPI also has a regional problem, I am well satisfied that the NCAA staff knows there is a significant problem and I suspect that the staff has tried to address it within the structure of the RPI. (For example, I believe that the reason RPI Element 2 is the average of a team's opponents' results against other teams is because the "against other teams" qualification slightly helps reduce the region and conference problem.) I'm guessing that the Committee will be talking about the region and conference problem at its upcoming meeting. Further, the bonus and penalty adjustments can help moderate the problem, and I'm guessing that the Committee specifically will be considering bonus and penalty variations and how they might help with the problem. I think it's going to be very interesting to see what comes out of the Committee's meeting -- if we ever are able to find out what the Committee decides. It could be consequential -- or not. One thing I know after running a great number of experiments with RPI modifications is that the RPI's basic structure is quite "rigid" and it is not possible to make reasonable modifications that will solve the region and conference problem. It might, however, be possible to make modifications, particularly to the bonus and penalty amounts, that will slightly moderate the problem. If anyone finds out exactly what the Committee has on its agenda or what the Committee decides, please post it on this thread (or pm me and I'll post it).


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Hill Scholars - Scholarship Opportunities
Applying for Scholarships at Carroll
Applying for Carroll's institutional scholarships is simple. In addition to a possible merit-based scholarship for the Hill Scholars program, you may be eligible for other merit-based and need-based institutional scholarships. To be considered, you must apply online.
Follow these simple steps:
- Visit our Financial Aid web page and click the Stars Online link.
- Create a profile and answer some simple questions so that we can provide you with scholarship options that fit your eligibility.
- Once scholarships have been identified, apply for each applicable scholarship before the April 21 deadline.
Need-Based Scholarships
You may complete the Free Application for Federal Student Aid (FAFSA) application online. Determining your financial need involves a careful review of your information from the FAFSA. This standard need analysis system treats all students equally and fairly.
Financial Aid also includes the ability to receive student loans. Completing the FAFSA is the first step for apply for loans as well.
Merit-Based Scholarships
Certain scholarships are awarded based on your academic record and your intended major. For example, the Commissioners' Student Leadership Scholarships are open to graduating high school seniors who demonstrate leadership qualities and academic excellence. You need to write an essay about a service experience or a community activity in which you have participated.
If you have any questions about the scholarship process, call our Financial Aid Office at 410-386-8437 or email the Director of the Hill Scholars Program at email@example.com.


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MOBILE, Ala.—On the second day of Senior Bowl practices, several players stood out for different reasons. It was clear the South squad has more overall talent. History tells us that means the North will win Saturday's game.
Here are the players who impressed and those who struggled:
Players who helped themselves
Melvin Ingram, DE, South Carolina, 6-2, 276, 4.75 (South). Ingram was impressive for the second consecutive day. He is explosive off the ball and sudden with his initial movements, which makes it difficult for offensive linemen to sustain their blocks on him. He displayed an excellent variety of pass-rush moves during the one-on-one period to consistently beat the offensive tackle. He has a rare combination of quickness, agility and power closing. If he continues playing at this level the rest of the week and has a strong spring, we are confident Ingram will end up as a first-round pick.
Cordy Glenn, OG, Georgia, 6-5, 346, 5.35 (South). Glenn is, quite simply, an immovable object. He is so big and strong that he makes the defender's task of running around him far too tough. During the one-on-one pass rush drill, he emerged victorious on nearly every rep. He consistently was able to anchor himself against bull rushers with his combination of size, strength and wide, low base. Through two days, Glenn looks like a second-round pick.
Juron Criner, WR, Arizona, 6-2, 220, 4.5 (South). Criner is the most impressive of the bigger receivers on either team. He shows the rare ability to contort his body to snatch off-target throws away from his frame. He has great balance, body control and lateral agility when running his routes and gains good position on opposing cornerbacks in tight man-to-man coverage. He also shows smooth change-of-direction ability and suddenness against zone coverage. On one play against cornerback Casey Hayward during the one-on-one period, he ran a quick out route and Hayward was quick to jump the route. However, the ball was on the other side of the cornerback, so Criner reached out with one arm and snared the ball far outside his frame to make the difficult one-handed catch.
Dwight Bentley, CB, Louisiana-Lafayette, 5-10, 176, 4.45 (South). Bentley impressed this afternoon by showing off his fluidity in transition and excellent closing burst. He displayed tremendous reaction skills in man-to-man coverage and constantly put himself in position to make plays on the ball. However, Bentley needs to improve his ball skills going forward as he missed numerous opportunities to deflect or intercept passes.
Kelechi Osemele, OT, Iowa State, 6-5, 333, 5.00 (North). In the scouting world, athletic offensive linemen are commonly referred to as "dancing bears." Osemele is certain to be admitted as the newest member of the club. He showed a rare combination of foot quickness, lateral agility and flexibility as both a run and a pass blocker. On one play during the 9-on-7 drill, he put his athleticism on display by blocking two defenders with ease. He reminds us of Villanova tackle Ben Ijalana, who the Colts drafted in the second round last year.
Players who hurt themselves
Zebrie Sanders, OT, Florida State University, 6-5, 308, 5.20 (South). Sanders made up for being beaten regularly around the edge by being beaten regularly to the inside as well. His performance during the one-on-one pass rush drill was beyond disappointing. He constantly played on his toes with straight legs, while bending at the waist, extending his arms and dropping his head. Due to poor technique and footwork, he struggled to sustain his blocks in either the 9-on-7 or the team periods as well.
Dwight Jones, WR, North Carolina, 6-3, 226, 4.65 (South). Jones followed his underwhelming performance in Monday's practice by being less impressive Tuesday. He runs upright routes and takes far too long to come out of his breaks to get open. He does not play with any real sense of urgency and seems content going through the motions. While he catches the ball well, he has a bad habit of not using his length to snatch the ball away from his body. Despite impressive game film, Jones has done nothing to help himself thus far.
Terrance Ganaway, RB, Baylor, 5-11, 241, 4.70 (South). Despite having a big physique, Ganaway struggled to distinguish himself athletically. He didn't show any burst or acceleration and also lacked the vision to find the cutback lane. He also does not lower his shoulders before contact to make himself more difficult to tackle.
Donnie Fletcher, CB, Boston College, 6'0, 201, 4.55 (North). Film showed Fletcher might need to transition to safety in the NFL, and his performance Tuesday backed up that thought. He showed no explosiveness or closing ability and struggled to stay with his man on downfield routes.
Jake Bequette, OLB, Arkansas, 6-4, 264, 4.90 (South). Bequette has been playing strongside linebacker for this All-Star game after playing defensive end in college. Despite his great effort, he simply looks lost. Despite being good enough to be a productive defensive end in a 4-3 scheme, he looks bad playing outside linebacker in a 3-4 scheme.


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How do historians know what to believe?
This session aims to prepare year 5/6 pupils to study history at secondary school. It will help pupils to understand that different types of sources can be used to find out about the past, and how historians can use these sources as evidence. It will also introduce pupils to the concepts of reliability and usefulness.
The workshop begins with a discussion led by the education officer, considering what types of evidence a historian needs in order to find out about the past, and where they might find this evidence. Pupils will then be asked to think about the types of questions a historian needs to ask when faced with different types of evidence – the education officer will guide pupils to consider the four Ws: who, what, why, and when – key questions about a document and its creation.
For the second part of the workshop, pupils work in groups looking at different types of documents, including a map of London created just after the Great Fire, a Victorian criminal register complete with photographs of child convicts, a Plea Roll taken from the reign of Henry VIII and propaganda posters used during the Second World War. Pupils are given no prior information about any of these documents, but have to use their questioning techniques as historians to try and determine what each document is, when it was made and how it can tell us about the past. Pupils are given a workbook to fill in with the results of their investigation.
For the final part of the workshop, pupils are given the opportunity to feed back on their findings and time to ask the education officer any questions they would like about the documents they have been investigating.
A really useful session, led by experts who were skilled at getting students to analyse documents. All of our students were engaged throughout, and asked lots of relevant and interesting questions. A fantastic foundation for future work in the classroom
KS 2 teacher
This session can be delivered as a workshop, videoconference or virtual classroom. Find out more about the types of session we offer.
This session is delivered as a:
at The National Archives
2 hours
in your classroom
1 hour
in your classroom
1 hour
Available: All year
Cost: Free to UK schools
Suitability: Key stage 2Request a booking
All activities must be booked in advance.
Tel: +44 (0)20 8392 5365
Fax: +44 (0)20 8487 9202Contact the education team


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Selby Town 0 Nostell MW 4
Coughlan 38, Eyles 44,77, Hope 86. Att 60
Caution; 10. Roy Fogarty 52'
Team; 1.Ciaran Gibson 2.Rueben Pearse 3.Liam Tuck 4.Mat Friend 5.Jamie Hainsworth 6.Steve Garner 7.Matthew Marshall(15.Aidan Wintersgill 60) 8.Craig Aspinall(capt) 9.Calum Ward 10.Roy Fogarty( 17.Louis Blackwell 60) 11.Abbas Sadeghian( 16.Jonathon Wileman 75) subs not used; 12.Fran Pariente 14.Ben Yorke
For the third game running The Robins have lost four nil and they have lost by that figure seven times this season. Selby could have been three up after half an hour with Callum Ward going close twice and Fogarty hitting a chance wide. Debutant keeper, Ciaran Gibson made a great save with his leg from a 12yard shot by Coughlin. But a free kick from just outside the area saw Liam Coughlin score with relative ease as he shot over the wall into the net. For a few minutes The Robins looked shocked and they panicked a little bit. Hardly surprising that their confidence is low. They have not kept a clean sheet, in the league, all season. The lads rallied a bit and looked dangerous at times going forward. If they could keep the score down at half time they could regroup and take the game on. But almost inevitably, they lost concentration on the stroke of half time and conceded a second when Eyles scored with a lob from the edge of the area. James Eyles scored two last Tuesday in the cup tie and he went on to score two again Tom Hope finished off the scoring with a late strike The season is almost over but there is still a mathematical chance for the Robins to fly away from the bottom with 15 points still attainable The lads must hold onto that thought as they keep battling on.
On the plus side, Selby's junior section keep churning out quality players with two players recently snapped up by Grimsby Town, one excellant young keeper now plying his trade with Huddersfield Town, to name but a few. We now have a pass certificate for the floodlights which will allow us to enter the FA Vase and FA Cup next season Mark Shooter and Dave Wilson 2 Selby Town season ticket holders are going to Sri Lanka for the cricket armed with two flags sporting the Robins badge. We wish them well and we will keep an eye out for the flags.
Next week we visit Armthorpe Welfare and I hope I am not tempting fate, but we won there last season which went a long way towards keeping our Premier status that season.
Sat 24 Armthorpe Welfare
Sat 31 NO GAME
Sat 7 RETFORD UNITED
Sat 14 PARKGATE
Sat 21 Tadcaster Albion
Sat 28 Maltby Main
Home games in bold capitals and kick off at 3.00pm unless stated


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The difficulty for me, with pants, is that my midsection is the shape of an egg. Have you ever tried to put pants on an egg? Nothing stays up. I like to call my belly, affectionately, 'the medicine ball,' and it is now so large that none of my shirts entirely cover it. People are just going to have to get used to seeing the bottom strip of my egg/medicine ball/belly (just so long as I don't spring any short and curlies above the rolled down elastic waist of my pants!)
I'm in the home stretch!
And I want to add that although I complain for laughs or for real on here, 90% of this pregnancy has been wonderful, and I'm very very happy about it. The nausea sucked, and lasted longer than anticipated. The heat sucks. But everything else has truly been good. I know I complain, but I wanted to share that there is another side to all this too, that I don't always mention because it's not as funny nor as compelling to write about! I had hoped to enjoy being pregnant this time and I have!
I'm getting better, with the fear of labour and my fear of parenting three. I have a game plan: relax and do only what I can do. If I can't wash a load of dishes or somebody's underwear before it's time to leave for school, we'll deal with dirty. If CB doesn't sleep at night, we'll have naps. If I need a break, I'll sign Matthew up for an activity, or send him to a friend's house AND THAT IS OKAY! (I feel guilty about needing time apart from him, but I'm getting realistic about this). One day at a time, one hour at a time, and try to enjoy as many minutes as I can. Dude, they really do grow up fast. It was only a few minutes ago that Ayden was born, wasn't it? That five years went by in a heartbeat. Another five and he'll be TEN! Somebody tell me the magic formula to STOP TIME!?!
Boys will be home from grandma camp tomorrow night. I miss them, but DAMN if this past four days hasn't been relaxing! Just what I needed!
Monday, July 21, 2008
The trouble with pants
2 comments:
- Janet said...
Glad you have had a relaxing four days!!!!
I LOVE your attitude about your new baby!!!
- July 21, 2008 at 12:55 PM
- Breanne said...
When you start talking about time going fast...sigh. I can't help but well up. Isn't it so true? Time literally vanishes before our eyes.
Being a parent is so tough, but your right, you can only handle one moment at a time. We are so blessed to have these healthy, happy, beautiful kids, and we have to cherish every moment!
God bless them!!
- July 21, 2008 at 10:22 PM
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Apparatuses and methods for removing veins, usually varicose veins, rely on endoluminal capture of a distal end of the vein segment to be removed. In the illustrated embodiments, a shaft having reciprocatable penetrating elements is used to engage and capture the distal end of the vein. After rotating the shaft to pull the distal segment of the vein away from the connecting tissue, the shaft is withdrawn proximally, invaginating the segment back to the point of insertion.
1. A method for removing a blood vessel having a vessel wall from tissue, said method comprising:
introducing a shaft having retracted penetrating elements into a lumen of the vessel at a proximal location;
advancing a distal end of the shaft to a distal location within the vessel lumen; exposing the penetrating elements and capturing the vessel wall at the distal location within the lumen with the distal end of the shaft; and
manipulating the shaft to remove the vessel from the tissue while the vessel wall remains captured by the penetrating elements;
wherein exposing and capturing comprise advancing at least one penetrating element from the shaft into the vessel wall and rotating the shaft to separate the vessel wall from surrounding tissue;
wherein the at least one penetrating element is deformable and advancing comprises advancing the element over a ramp which deflects the element radially outwardly.
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The present application claims the benefit of U.S. Provisional Patent Application Serial No. 60/342,719, filed Dec. 21, 2001, the full disclosure of which is incorporated herein by reference.
The present invention relates generally to medical devices and methods. More particularly, the present invention relates to methods and apparatus for removing veins from surrounding connective tissue.
Various techniques have been developed to treat varicose veins. In simple cases, elevation of the legs and compression stockings may be sufficient therapy to mitigate the progression of the varicose veins. An alternative therapy includes "sclerotherapy." In the procedure, the diseased veins are injected with a sclerosing solution, such as sodium tetradecyl sulfate, along the tract of the varicose vein. Typically, multiple injections are administered during a treatment session. The sclerosing solution causes subsequent inflammation and damage to the endothelial cell lining of the vein. This damage and contraction in conjunction with post-procedural external compression results in localized occlusion or contraction of the vessel which forces rerouting of the blood through other conduits and in ideal circumstances causes the vein to become a fibrin cord which is resorbed over time. With this therapy, patients typically require two or more treatment sessions in order to satisfactorily alleviate the varicose veins. However, typically the technique does not provide a permanent or complete solution with varicose veins reoccurring over time. Consequently, sclerotherapy is often combined with a more invasive operation such as ligation and/or stripping of the saphenous vein. In additionally, sclerotherapy is not without the potential for complication. These can include the potential for browning splotches or bruising of the skin, formation of blood clots in the veins, inflammation, adverse allergic reactions, ulceration, phlebitis, anaphylactic overdose, ischemia, skin or fat necrosis, and peripheral neuropathy.
In another technique, varicose veins are removed by "stab-avulsion phlebectomy" with small surgical hooks. In this technique, the varicose veins are removed and/or ligated through a series of separate small skin incisions. These incisions are made along the vein path and the vessel is exteriorized using small hooks and forceps. Once exteriorized, the loop is put under traction, divided, and both ends avulsed separately. When a loop of a larger varicose vein is exteriorized, it is pulled with rocking motions. These alternating traction movements permit detachment from perivenous tissue as well as allow for further identification of the vein path. During this procedure compression is applied at the incision locations to promote hemostasis. With this therapy patients typically only require one treatment session. However, in many cases dependent on the skill of the surgeon and on the extent of the varicose anatomy, the procedures is very time intensive and can take between 2–3 hours to complete. In addition, the procedure also requires multiple incisions and in many cases the veins tend to fragment into small segments while being avulsed making it difficult to entirely remove the targeted veins. Finally, patients typically experience ecchymosis (bruising) for up to four weeks post-operatively and in more extreme instances can experience complications including infection, deep or superficial thrombophlebitis, lymphorrhea, paresthesia and hematoma.
In addition to these procedures which are in clinical use, it has been proposed in the patent and medical literature to use intravenous devices for invaginating and stripping vericose veins. For example, U.S. Pat. No. 6,030,396, describes a device which is introduced through a venous penetration and advanced to a distal location within the venous lumen. The lumen is surgically opened at the distal location and the vein severed. The severed end of the vein is then sutured to the device, and the device withdrawn proximally to evert and remove the vein. Although a promising procedure, the need to surgically open the proximal venous location and suture the vein to the device is a drawback of the procedure. An analogous procedure for removing varicose veins using an endoscope is described in published PCT Application WO 00/45691. In that patent application, an endoscope having several channels is introduced through a penetration into the venous lumen, preferably over a guidewire. While visualizing the luminal wall, a balloon is inflated and facilitates frictional engagement of the vein segment prior to removal. WO 94/21177 describes use of a device with exposed barbs for endoluminal introduction and capture of a vein prior to avulsion and removal.
In view of the above, it would be desirable to provide improved apparatus and methods for venous removal, particularly for the removal of vericose veins in a minimally invasive. It would be particularly useful to provide apparatus and methods which may be performed endovascularly, i.e., through the venous lumen and which simplify capture and retraction of a distal end of the vein to remove, and optionally without the need for visualization, particularly endoscopic visualization, during the procedure. Such procedures should preferably require only a single tissue penetration to permit introduction of the removal apparatus, while providing for simplified and improved methods for capturing and avulsing a distal end of the vein remote from the introductory point. At least some of these objectives will be met by the inventions described hereinafter.
Relevant U.S. Patents include U.S. Pat. Nos. 6,077,289; 6,030,396; 5,893,858; 5,011,489; 4,517,965; 3,764,427; 3,568,677; and 3,508,553. Relevant PCT Publications include WO 01/37739; WO 00/45691; WO 99/17664; and WO 94/21177. Descriptions of phlebectomy and related procedures are found in Ambulatory Phlebectomy, Ricci and Georgiev with Goldman, pp 67–126 Mosby—Year book, Inc., St. Louis, Mo. and Vein Diagnosis and Treatment: A Comprehensive Approach, Weiss et al. Eds., McGraw Hill Medical Publishing Division, New York 2001, Chapter 22, pp 197-210.
The methods and apparatus of the present invention permit the endoluminal removal of blood vessels, usually veins, and more usually varicose veins. By "endoluminal" it is meant that the removal device is introduced into the venous lumen and manipulation of the removal device accomplishes detachment of the vessel wall from the surrounding connecting tissue and removal of the separated vessel wall through a tissue penetration that has been made to introduce the removal device. Penetration can be made through a small incision and venotomy, or through a less invasive percutaneous approach where an introductory sheath is introduced through the tissue into the vein. Optionally, after being accessed, the proximal end of the vein can be severed and removed through the access incision to provide for vein exteriorization. The removal device of the present invention can then be introduced through the free end of the vein which has been exteriorized. The methods of the present invention will typically be used for removing varicose or other damaged veins.
Methods according to the present invention for removing a vein or other blood vessel having a vessel wall from tissue comprise introducing a shaft of the removal device through a tissue penetration and into a lumen of the vein at a proximal location. A distal end of the shaft typically has fully retracted penetration element(s) and is advanced in a distal direction through the lumen to a distal location. References to "proximal" and "distal" refer to the position relative to the initial venous access point. The initial access point will be considered the proximal location while the remote target site at which the vein is first captured and detached from the surrounding connective tissue is the distal location. Generally, the shaft may be advanced in either a prograde (i.e., in the direction of blood flow) or retrograde (i.e., opposite to the direction of blood flow) direction. Usually, however, the shaft will be advanced in the prograde direction since it will pass more easily through the venous valves.
The proximal location and the distal location represent the terminal ends of the vein segment which is desired to be removed. The penetrating element(s) is (are) advanced from the shaft and exposed so that the vessel wall is captured with the penetrating element(s) at the distal location from within the lumen with the distal end of the shaft. After capturing the wall, and optionally severing or dissecting the vein at the proximal location, the shaft is manipulated to remove the vessel, usually by retracting the shaft in a proximal direction to avulse or invaginate the vessel wall from the tissue.
The shaft of the removal device may be manipulated in a variety of ways to remove the target length of vein or other blood vessel, either as a single piece or in a plurality of segments. Usually, the shaft will be initially rotated about its longitudinal axis in order to capture the end of the blood vessel and draw down the blood vessel onto the outside of the shaft. The shaft may then be withdrawn proximally in order to avulse the blood vessel to be removed, or at least a portion or segment thereof. If only a portion or segment of the target blood vessel length is removed, the procedure may be repeated. Alternatively, the shaft of the removal device may be rotated an amount sufficient to draw down at least one-half of the length of the blood vessel to be removed, sometimes drawing down the entire length of the blood vessel to be removed. In the latter case, the blood vessel may be removed with little or substantially no avulsion. In all these cases, if less than the target length of blood vessel has been removed, the removal steps may be repeated in order to remove the remaining length or segments of the blood vessel.
Optionally, the vessel wall may be captured without having to form any external tissue penetrations in the region of the distal location. Alternatively, however, a percutaneous or open surgical incision could be made near the distal location in order to sever the distal end of the vein segment to be removed. As a still further alternative, the vessel wall could be severed at or near the distal location in an endoluminal manner, i.e., using a tool which has been endoluminally introduced to the distal location, for example using a blade or other severing instrument which is present on the removal device itself.
Capturing the distal end of the vein segment to be removed typically comprises engaging at least one penetrating element from the shaft of the removal device into the vessel wall to permit manipulation thereof. Preferably, the shaft is then rotated and/or axially retracted in order to separate the vessel wall from the surrounding connecting tissue at that location. The shaft is then proximally retracted in order to complete avulsing the vessel wall to separate the wall from connecting tissue and remove the wall through the proximal tissue penetration. Usually, the removed venous segment will be severed or torn from the remaining portion of the vessel wall after the shaft has been retracted back through the tissue penetration at the proximal wall location.
Optionally, a signal may be emitted from the distal end shaft prior to capturing the distal end of the vessel segment to be removed. By observing the position of the signal, which is usually a visible light signal, the position of the removal device can be tracked to determine when the distal end of the shaft has reached the distal location of the venous lumen which is within the venous segment to be removed. Usually, multiple venous segments will be removed sequentially, and availability of the light or other signal allows the physician to mark the patient's skin at the distal location which then becomes the proximal access point for the next avulsion step.
In addition to these methods, the present invention provides apparatus for removing a vein segment from tissue. The apparatus comprises a shaft having a proximal end and a distal end. A mechanism is disposed at or near the distal end of the shaft for endoluminally penetrating a venous wall to a depth selected to capture the wall and permit separation of the wall from underlying connective tissue. A handle is disposed at the proximal end of the shaft and includes an actuator coupled to the penetrating mechanism so that the user may selectively actuate and engage the distal end of the venous segment when it has been properly located. The shaft may be rigid or may be flexible to facilitate introduction through the venous lumen.
The penetrating mechanism will include at least one penetrating element which is reciprocatably attached to the shaft to shift between a fully retracted position and a radially extended position. Usually, at least two such penetrating elements will be provided, and three, four, or even more may be provided in certain instances. The penetrating elements may be resilient or malleable and will be deployable to protrude from the shaft in a radial direction (or at least a direction having a significant radial component) such that the distance of the distal tip of the penetrating element from the surface of the shaft will be in the range from 0.25 mm to 10 mm when fully extended, preferably being in the range from 0.5 mm to 1.5 mm when fully extended. The resilient penetrating elements will be preshaped to deflect outwardly as they are advanced. In contrast, the soft or malleable element will typically be formed in situ as they are advanced over a ramp or cam which deflects them outwardly. The penetrating elements will typically have a maximum width in the range from 0.1 mm to 2 mm, usually from 0.25 mm to 1 mm. In the case of penetrating elements having circular geometries, the width will of course be a diameter. The length of the penetrating elements 20 is less critical and will depend largely on the extent to which the elements extend proximally into the shaft. The length and diameter of the shaft will vary depending on the nature of the target needed to be removed. For typical varicose veins, the shaft will have a length in the range from 5 cm to 40 cm, preferably from 10 cm to 20 cm, and a maximum width, typically a diameter for circular shafts, in the range from 1 mm to 6 mm, preferably from 1 mm to 2 mm.
In the exemplary embodiments, the penetrating elements are inclined at an angle relative to the axis of the shaft when radially extended from the shaft. Typically, the penetrating elements are disposed distally and inclined at an angle in the range from 5� to 80� relative to the shaft axis, usually from 5� to 60� relative to the shaft axis when radially extended. Alternatively, the penetrating element(s) may be proximally disposed and at an inclined angle when radially extended. Such proximally inclined penetrating elements will be disposed at an angle relative to the axis of the shaft in the range from 5� to 80�, usually from 5� to 60�. The invention, however, is not limited to inclined penetrating elements and in some instances elements which are disposed at 90� relative to the shaft axis will also find use.
In preferred aspects, the apparatus of the present invention may comprise a signal generating element disposed near the distal end of the shaft. The signal generating element will be selected to provide an observable signal external to the patient and indicative of the position of the distal end of the shaft. Conveniently, the signal generating element can be a visible or infrared light source which can be visually tracked or tracked using appropriate detectors, on the skin of the patient.
Referring now to
The shaft 12 may be rigid, semi-rigid, or flexible. Rigid structures may be formed from stainless steel. Semi-rigid and flexible structures may be formed from shape memory alloys, such as nickel-titanium alloy, reinforced polymeric materials, close wound coils, or may be formed as gooseneck or other conventional shapeable shaft structures. The length and width (usually diameter) of the shaft will be selected to accommodate the target vein segment to be removed. Exemplary lengths and widths are set forth above.
The bullet tip 18 is attached to the distal end of the shaft 12 by conventional techniques and will usually include at least one passage therethrough for deployment of at least one penetrating element. As illustrated in
The geometry of the bullet tip and penetrating element deployment passages may be selected to deploy the penetrating elements in a desired pattern. For example,
Referring now to
For distally extending penetrating elements 20, as illustrated in
Numerous other designs and configurations for the penetrating elements of the present invention will also be possible. Referring to
Referring to
Referring now to
Referring now to
Referring now to
Referring now to
As described thus far, the devices have employed resilient penetrating elements formed from a material having a good spring memory, such as spring stainless steel or a nickel-titanium alloy. It will also be possible to fabricate penetrating elements from a deformable or malleable material. Such deformable penetrating elements will be deflected and deformed as they are advanced over a ramp or other surface which changes their direction of travel.
Also, as described thus far, the penetrating elements have been shown to advance in a single direction. It may sometimes be advantageous to employ multiple penetrating elements where different elements advance in different or opposite directions. For example, as shown in
Once it is confirmed that the apparatus 10 is properly located, the penetrating elements 20 will be deployed radially outwardly to engage the inner surface of the vessel wall (VW). Optionally, proper engagement of the penetrating elements 20 can be confirmed by imaging techniques, such as fluoroscopy or duplex ultrasound.
After it is confirmed that the penetrating elements 20 have properly engaged the vessel wall (VW), the apparatus 10 is rotated about its axis, as indicated by arrow 72 in
After a distal portion or segment of the vessel wall VW has been drawn down to the outside of the apparatus 10 shaft, as shown in
In other instances, prior to removal of the vein, it may be desirable to disrupt the attachment of the vein to surrounding connective tissue, either by mechanical dissection techniques and/or through the use of tumescent anesthesia fluid infiltration. In order to assist in capture of the vein by the penetrating elements, it may be desirable to externally compress the capture site. That is, by applying manual external compression at the site (which may be observed using the light signal described previously), the ability of the penetrating elements to penetrate and capture the vessel wall may be enhanced.
Once the capture step has been successfully completed, and the vein separated from remaining portions thereof, the apparatus 10 may be drawn proximally, as shown by arrow 74 in
After the device 10 is withdrawn completely from the original axis penetration, the vessel can be severed and the remaining end closed by conventional surgical techniques or simply allowed to heal without further intervention. The vessel wall will have been completely withdrawn from the surrounding connective tissue, as shown in
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text:
Corn Pudding ( Epicurious.com)
Nutritional Info
- Servings Per Recipe: 10
- Amount Per Serving
- Calories: 136.7
- Total Fat: 4.3 g
- Cholesterol: 101.8 mg
- Sodium: 185.4 mg
- Total Carbs: 20.1 g
- Dietary Fiber: 1.8 g
- Protein: 6.2 g
View full nutritional breakdown of Corn Pudding ( Epicurious.com) calories by ingredient
Number of Servings: 10
4 tablespoons (1/2 stick) unsalted butter, melted, divided, plus additional for dish
1 cup chopped red onion
1 1/2 cups whole milk
4 large eggs
3 tablespoons all purpose flour
2 tablespoons sugar
1 teaspoon salt
1/2 teaspoon freshly ground black pepper
3 15- to 16-ounce cans corn kernels, drained, divided
Preheat oven to 400°F. Butter 13 x 9 x 2-inch oval or rectangular baking dish. Heat 1 tablespoon butter in heavy medium skillet over medium heat. Add onion and sauté until soft, about 5 minutes; cool in skillet.
Whisk milk, eggs, flour, sugar, salt, pepper, and remaining 3 tablespoons butter in large bowl. Scrape in onion mixture. Add 2 cans drained corn. Puree remaining 1 can drained corn in processor until smooth. Add puree to bowl with custard mixture and stir to blend well; transfer to prepared dish.
Bake pudding until set in center and beginning to brown on top, 40 to 45 minutes. Serve warm.
Number of Servings: 10
Recipe submitted by SparkPeople user ALLIE716.


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The composition of the author photo is purposely contrived to convey the appropriate authorly attributes specific to his or her genre. It is no accident that Margaret Atwood, queen of Canadian fiction, is photographed with a small, monarchical smile and not Robert Munch's exclamatory, eye-popping enthusiasm and Where's Waldo fashion sense. The photo is a kind of visual resumé — it is offered as a testimony to the nature and quality of the book's contents. The author's image does not only complement the book, it is the visual encapsulation of the book itself.
from Deconstructing the Author Photo by Lorie Boucher
Now here's a group of authors who know how to pose for a photo shoot.
House of Anansi
Ms. Boucher goes on to say:
Visual stimuli are a daily assault on our senses and on our intellects. Correlations between dissimilar things are made for us to consume daily, unquestioningly. But there is no relationship between a photo of an author and the text he or she creates. It is a marketing ploy that plays on our basic instinct to assign value to what we see, rather than to expend energy analyzing what is being purposefully contrived for our consumption.
Nicholas Blincoe of the Telegraph would argue that he feels lost when he doesn't find an author's picture inside the back flap of the book jacket.
Perhaps I'm alone, but I need a face to project my warm feelings on to; even if the face resembles a lump of squashed Plasticine, matted with dog hair. But, then, I am a huge fan of Anthony Burgess.
Jim Cox, in his article Author Photo Advice claims that author photos make good business sense for both publisher and author, and that human beings are "conditioned to notice what our fellow homo sapiens look like". Here's what he had to say about his experience with a photo shoot.
As those who have seen me can attest, I'm overweight, wear a beard to cover up a multitude of chins, and have never won a beauty contest in my life. But I took my non-photogenic self to a portrait photographer, and after an hour's session, the guy came away with a picture of me that makes me look like I was a Fortune 500 magnate and a Hollywood star rolled into one.
I think I will be buried with that framed photo clasped firmly in my moribund hands.
The funniest account of an author shoot I have read was in Neil Gaiman's journal for American Gods.
As the shoot wound down, Jeff and I got to chat a little. "How would you like me to make you look?" he asked. "Brooding, mysterious, scary, friendly -- what kind of impression are you trying to give?"
I thought for a moment, and realised that I had no idea. "Could you make me look surprisingly f*able (the spelling has been bleeped as to not to offend those who will probably be offended anyway) for a writer, please?"
He laughed (and so did the rest of the crew) and said he'd do his best.
And we wrapped up the shoot, then I ate and drove another three hours back.
Actually, I'd settle for brooding.
Really, I'd settle for not very goofy.
I think I need an image consultant...or maybe I'll just read Kathleen O'Reilly's latest,
The Diva's Guide To Selling Her Soul instead.
What would you sacrifice to be a size zero? For more than a few women, the promise of thin thighs in 30 seconds might just convince them to deal with the devil. Award-winning author Kathleen O'Reilly's The DIVA'S GUIDE TO SELLING HER SOUL (Apr., Downtown Press) is a story for every woman who knows that getting celebrity-style skinny involves a pact with Lucifer‹or in this case, the silver-tongued Lucy. She's the trashiest gossip columnist in the city and she's working a pyramid scheme that's truly evil. The more clients our "innocent" heroine V recruits for her "Life Enrichment Program," the more of V's decadent desires will come true. Unfortunately, V soon discovers there maybe something worth saving in her after all, which means when she made the deal with the devil she may have truly damned herself - unless she can figure a way out.
(However she gets out of it, I hope it involves chocolate. ;-)


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When Richard Vedder started teaching economics at Ohio University 47 years ago, a year's tuition there cost a state resident the equivalent of $3,500 in today's money. The fee today is triple that. This kind of runaway cost escalation can't go on, he says. Higher education's business model is simply unsustainable.
Colleges have so far gotten away with their price hikes by making it easy for students to borrow money. But now the customers are tapped out. They owe $1 trillion, and they are having a rough time repaying that debt with the kinds of jobs available in today's economy. Vedder notes that 115,000 janitors have bachelor's degrees.
The system is ripe for an upheaval. Cheap online courses seem poised to deliver it. Traditional colleges at opposite ends of the glamour spectrum will probably survive. At one end, community colleges could deliver bankable skills in fields like nursing and computer network installation. At the other end, elite institutions like Princeton will carry on for a few more centuries.
In between? "It's going to wipe out high-cost mediocre private schools without big endowments," Vedder says.
For more on this debate, see The Scary Economics of Higher Education.


text: Washington Update Obama Delivers State of the Union Address 2/15/2013 Permissions President Barack Obama delivered his annual State of the Union on Tuesday, Feb. 12, urging Congress to act on a litany of public policy issues – many of which are HR public policy issues. The President called for passage of comprehensive immigration reform, tax and entitlement program reform, the enactment of the Paycheck Fairness Act, an increase over three years of the federal minimum wage from $7.25 to $9 per hour and his jobs bill, stating that, "A growing economy that creates good, middle-class jobs – that must be the North Star that guides our efforts." In the face of a looming budget deficit and record national debt, Obama called for cooperation from both Democrats and Republicans in order to find solutions to some of Americans' greatest concerns. "Let's agree, right here and now, to keep the people's government open, pay our bill on time, and always uphold the full faith and credit of the United States of America," he said. The president went on to say that economic growth and prosperity were not just possible through legislative measures but through the training and education of the middle class. President Obama also urged Congress to pass comprehensive tax reform in order to level the tax burden across all income levels. While he called for a reduction in the corporate tax rate, he did not allude to any specific reforms to the tax code, nor did he indicate the types of entitlements on which he and the Democrats would be willing to compromise. With the tax preference of employer-sponsored health care and contributions to retirement making up two of the largest potential pots of revenue available for deficit reduction purposes, HR professionals will play a key role in the coming months in educating lawmakers of the importance such benefits have for employees and employers alike. SHRM, as the chair of the Coalition to Protect Retirement, will play a pivotal role in leading the employer associations in this education effort. Click www.howamericasaves.com to learn more about the coalition. As anticipated, President Obama voiced strong support for immigration reform, calling for the need to fix the "legal immigration system to cut waiting periods, reduce bureaucracy, and attract the highly skilled entrepreneurs and engineers that will help create jobs and grow our economy." SHRM and its affiliate, the American Council on International Personnel, will be working to ensure any agreement on immigration reform includes a series of reforms that provide employers with the tools needed to secure the highly skilled workforce necessary to remain competitive in a global marketplace and that any employment verification system that is enacted provides employers effective tools to ensure they are hiring a legal workforce. Permissions In This Issue Washington UpdateObama Delivers State of the Union Address WARN Act DevelopmentsHouse Panel Considers Employer Responsibilities Following Sequestration Immigration ReformBoth Parties Appear Ready to Tackle Reform This Year 2013 Employment Law & Legislative ConferenceHR Professionals Offer Key Perspective on State of the Union Policy Issues Workplace FlexibilityCommunity Partners – The Key to Success for the When Work Works Initiative Health Care ReformBenefits Expert Answers Your Health Care Questions TOP PICKS: LEGAL & REGULATORY DEVELOPMENTS FLSA Essentials Manual Online compliance guide with update service. Webcast: Who and What Federal Contractors Must Count Cara Crotty on new rules for employers doing business with the government. Available on demand. Seminar: California HR Learn critical California workplace regulations. Oct. 26-27, L.A. Labor Law Posters State and federal labor law posters with one-year update service. U.S. Immigration Essentials SHRM Seminar - Oct. 2015 in Los Angeles; Nov. 2015 in Houston Workplace Compliance E-Newsletter Free weekly update, summarizing legal decisions, legislative news and regulatory news. Whistleblowing, Reporting, & Retaliation Online course from SHRM E-Learning Express Request: Same-Sex Marriage Learn implications of Supreme Court's recent ruling. Webcast: The ACA After the Supreme Court Sibyl Bogardus discusses what employers should do now. Available now on-demand. Swipe for more! ADVERTISING LINKS


text:
Falling Trees in Queens Claim First Victim
A 38-year-old woman was hit by a falling "tree branch or limb" in Ridgewood, Queens, and is in critical condition at Wycoff Hospital, WNBC reports.
1010 WINS elaborates: "The woman was reportedly walking down the sidewalk Sunday around 3:30 p.m. when the branch, about 14-feet long and 10-inches wide, fell from alongside a Long Island Railroad overpass."
Residents told the New York Post that "heavy rains probably loosened its weak roots and vibrations from the passing train likely caused it to finally fall." "If it was a few moments later it would have been me," said a passer-by.
It might have been any number of Queens residents. As NY1 previously reported, a storm last weekend had already taken down at least 25 trees in Queens, by the Parks Department's count.
During the storm one tree "fell into some power lines that caught on fire and forced residents on 161st Street to evacuate for about two hours"; another hit a house on 37th Street.
These are far from the first tree-falling incidents reported in Queens this year, though it is the first to critically injure a pedestrian. On March 10, a storm dropped trees on cars in Rosedale, Hollis, and Corona, reported NY1. During another storm on June 10, per NY1, a car owned by Syed Jamil of Jamaica Hills was crushed by a tree of which Jamil had previously complained to the authorities.
Parks Department personnel had been summoned, Jamil said, but "they said there was nothing wrong with that. But I had my landscaper, he told me the tree was dying."
New Yorkers are always well-advised to keep their heads up, especially in heavily-wooded precincts such as Queens. So should LIRR officials, considering that the tree that hit the woman in Queens today appears to have been rooted "alongside a Long Island Railroad overpass": local law firm Sakkas & Cahn, LLP reports winning a settlement of $3 million for "Pedestrian Struck by Falling Tree --Death of Victim -- Emotional Injuries to Family."
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text:
Holiday Home sites available at one of our exclusive caravan parks. Caravan Park Locations: Ballycastle, Castlerock, Kesh(Lough Erne), Rossnowlagh (Co.Donegal)
A wide selection of New and Used Holiday Homes available at Hayes Caravans.
'Crevenish Castle Holiday Park & Marina' development is situated on the scenic route to Enniskillen just one mile from the village of Kesh.


text:
Massage Services
Sports and Remedial Massage
Sport & Remedial Massage therapy has been developed to aid sports performance and the body's functional movement, provide assistance in postural correction and the treatment and prevention of injury.
This involves the use of deep massage, soft tissue manipulation techniques and exercise advice to reduce aches and pains caused by sport, injury or simply the stresses and strains of daily life. Whatever the cause we have something to offer.
Sports massage techniques stimulate the neuro-muscular system by integrating the muscular and skeletal systems. As an athlete training schedule develops, muscle overuse is common resulting in strains, tears and imbalances in the soft muscle tissue. If the aches and pains are ignored, serious injuries may occur, and the more susceptible the athlete is to further strain and injury.
One way to encourage muscle repair after training is with sports massage. Sports massage will help release any built up tension and lactic acid in the overworked muscles so that blood and oxygen can return to the muscle and effectively promote muscle repair. Sports massage, if received as part of a sports program, can help an athlete prevent injury due to overuse.
In addition to using regular sports massage sessions as part of your sports program, it can also benefit an athlete in the following ways:
Pre-Event Massage - Preparation for a competitive event.
Post-Event Massage – Active recovery post event.
Post Travel Massage- De-stress, release tension and relax after traveling.
Injury Prevention, Rehabilitation & Post Surgery Care.
PT:U Holistic offers deep tissue sports massage to customers in the comfort of their own home or your chosen venue, which makes it even easier to fit your appointments around your life.


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iMac G3 RAM
I currently have 192mb RAM in my iMac G3 DV 400MHz.
It has the original 64mb (which will be replaced with a 512mb stick) and an additional 128mb.
However, I am having a bit of a problem trying to find compatible RAM for it. Crucial want £63 for a 512mb stick, which is quite pricey in my opinion when you can get some for around £35 from eBay. However, I have emailed quite a few sellers about compatibility but they do not know.
Would any 512mb PC100 or PC133 SDRAM stick work in my iMac, such as this Kingston KVR133X64C3/512:
Or this:
Thanks in advance.
I don't know if they ship to the U.K. though...
Thanks, but $109 is £62, which is not much different from Crucial (and thats without delivery).
I think I'm going to risk eBay, the seller of the Kingston ram says that if it doesn't work he will give me a refund.
My 80GB hard drive should arrive on Tuesday, so hopefully if the RAM works I should be able to install OS X on it :)
Well, if the seller will refund you if it doesn't work, go for it :) FWIW, Apple is usually pretty good about using "standard" memory in their systems, and not something strange/proprietary.
Received the RAM today, popped it into my iMac and it works fine!
Got a 512mb and 128mb stick of PC133 RAM totalling 640mb, which should be fine for OS X.
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