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Aggies Continue Road Stretch at Denver
This Week: NM State looks to snap its four-game losing streak as the team continues on the road on Saturday, Jan. 26, against Denver. The game can be heard on the Aggie Sports Network and KSNM AM570 in Las Cruces with Jay Sanderson making the call. The Aggies are 9-9 overall with a 3-5 record in conference play going into the week.
Tickets: Tickets are $6 for Adults and as always, kids 12 and under are FREE. A group rate of $4 is available. Call the NM State ticket office at 575-646-1420.
Over the Airwaves: The Aggie Sports Network is producing 15 games on KSNM AM 570 this season, along with any contests in the post season with Jay Sanderson giving the play-by-play. Each of the Aggies road games along with those home games not aired on AggieVision will be available through KSNM. All games aired on radio are produced by the Aggie Sports Network on KSNM AM 570 in Las Cruces. The broadcasts can also be heard from anywhere around the world on the Internet by logging onto www.NMStateSports.com. Just click on the live events link to access the coverage for a fee.
Aggies on TV: Eight games are scheduled to air on television this season on AggieVision. The next game broadcast is the Aggies home game versus WAC foe Texas State on Jan. 31, from the Pan American Center. Fans can also go to www.AggieVision.TV for channel listings.
Live Stats on the Web: Live stats will be available for fans at www.NMStateSports.com at no cost for the entire season. Fans can click on the Live Events link at the top of the NMStateSports.com home page to access the live stats. Live stats for away games may direct fans to the opposing team's athletics page.
Getting Social: Get all the updates of Aggie Athletics on Twitter and Facebook. Get in-game statistics and in-game updates on Twitter @NMStateAggies. Find out about all Aggie Athletics promotions and events on Facebook (NMSU Athletics and The Aggie Student-Athlete).
Looking Ahead: After a tough road stretch the Aggies look to gain traction at home versus Texas State on Jan. 31 and UTSA Feb. 2, after losing their last two games in the Pan Am. Both games will be televised on AggieVision and streamed live on ESPN3.
Looking Back: The Aggies went 0-2 on the weekend with a heartbreaking loss at the buzzer to Utah State after leading 63-62 in the final seconds. The team attempted to bounce back at San Jose State on Saturday, but came up short with a 51-50 loss.
About the Aggies: NM State continues WAC play with a 9-9 overall record and 3-5 in league play. Going into the weekend with three straight losses, the Aggies are looking for a comeback in San Jose, Calif. on Jan. 19. NM State holds the third-best winning percentage (.529) in the conference, after winning three straight early in WAC play. The Aggies held their longest win streak of the season around Thanksgiving when they won four in-a-row at home and had not lost more than two consecutive games this season until dropping four straight as of late. NM State is averaging 58.2 points a game with a .345 team shooting percentage. Senior transfer Stefanie Gilbreath leads the Aggies with 15.9 points per game, while fellow senior Kelsie Rozendaal is averaging 6.9 rebounds a game, good for first on the team. . Rozendaal still manages to average 8.5 points per game and Gilbreath has scored at least 15 points in every conference game this season to bring her league average to 19.4 per game. Starting 14 games this season, Rozendaal leads the team with a .495 shooting percentage through her 15 games played. Sasha Weber is on top for the freshmen this season with nine points per game. She is shooting best on the team from three-point range with .379 percent.
In the WAC: The Aggies went on a three game winning streak on the second week of WAC play before dropping four straight including two at home, giving the team a 3-5 record. Gilbreath leads the Aggies with 18.6 points per game, while Williamson is on top with 30 assists this season. The Aggies have not lost a conference game by a margin larger than six points.
Small Margins: The Aggies have lost the last four WAC games by a combined 15 points.
Last Second Bummer: The last two WAC games (Utah State and SJSU) were decided by two and one point, respectively.
Road to Las Vegas: With three weeks of WAC play complete, the Aggies hold the\ second highest overall winning percentage (.563) in the conference with a 9-8 record. Sitting in the seventh in the league, NM State is even with Denver with a 3-4 record. Seattle U is the outright leader in the WAC thus far with a perfect 5-0 record and LA Tech sits second with a 4-2 conference record. The Aggies are one of three teams in the conference with a winning overall record.
Big D in LC: Aggie defense proves to be the game changer this season as NM State ranks second in the WAC for scoring defense with an average of 59.8 percent.
Leading the Pack: Gilbreath is the third leading scorer in the conference with WAC games. She is averaging 19.4 points per game, only topped by SJSU's Ta'Rea Cunningan (22.7) and Texas State's Diamond Ford (22.2). Gilbreath is also second during league play with 10 blocked shots, she is only bested by Riana Byrd of SJSU.
Home-Court Comfort: The Aggies are 6-4 in the Pan American Center this season. Prior to the Dec. 18 loss to Rio Grande Rival New Mexico, the Aggies boasted a perfect record at home. During the 2011-12 season, five of NM State's six wins came at the Pan Am.
Weekly Standouts
Stefanie Gilbreath: Gilbreath had a standout week with 24 rebounds and an average of 19.0 points on a 35.9 field goal percentage despite two losses for the Aggies. The senior worked for a career high 25 points on Thursday evening against Utah State while gathering nine rebounds with three blocks and three assists. She turned around two days later to pick up her third double-double of the season with a career best 15 rebounds and 13 points. Gilbreath had another three blocks on the day against SJSU as well. Gilbreath now sits on an 18.6 point average in conference play by scoring in the double digits in each WAC game this season.
Kelsie Rozendaal: Playing just one game this week for NM State, Rozendaal worked for the third double-double this season with 10 points and 10 rebounds in the tough loss to SJSU on Saturday, Jan. 19. The senior had a team-high six offensive rebounds in the game in her 24 minutes played. Rozendaal moves her reason average to 7.1 rebounds a game, while still managing 8.6 points per game this season.
Double Doubles: Seniors Kelsie Rozendaal and Stefanie Gilbreath as well as freshman Sasha Weber have collected double-doubles this season in three games this season.
Gilbreath: 15 pts, 10 reb; UTA, 12/29
Gilbreath: 21 pts, 11 reb; Idaho, 1/12
Gilbreath: 13 pts, 11 reb; at SJSU 1/19
Rozendaal: 22 pts, 11 reb; Loyola Marymount, 11/12
Rozendaal: 11 pts, 11 reb; at Texas State, 1/5
Weber: 11 pts, 10 reb; at Texas State, 1/5
It's a Three-Point Game: The Aggies have started eight games with a three pointer this season.
vs. George Mason W, 55-52 (D. Williamson)
vs. UC Irvine W, 50-44 (Sasha Weber)
vs. UTEP W, 69-68 (Sasha Weber)
at Southern Utah W, 70-68 (S. Gilbreath)
vs. UT Arlington L, 62-59 (Abby Scott)
vs. LA Tech W, 71-67 (Abby Scott)
at UTSA W, 69-52 (Abby Scott)
at Texas State W, 61-58 (S. Gilbreath)
at Utah State L, 65-63 (Sasha Weber)
About Denver: Averaging 65.6 points per game, the Pioneers of Denver sit at a 3-5 conference record, and are just 8-11 overall. The team won four of five before going on a four-game losing streak. Two of their four recent losses came in very close fashion, losing 67-68 to the SJSU Spartans and 66-69 to Seattle U. Stand out Morgan Van Riper-Rose is averaging 13.6 ppg, over five more points than the second leading scorer at 8.4 ppg. Van Riper-Rose leads the team in almost every statistical category. As the Pioneers look to get back on a winning track, they will need the consistent play of Van Riper-Rose and improve as a team from the field.
Series History versus the Pioneers: The NM State Aggies are 5-5 all-time against the Denver Pioneers. This is the first year Denver is a part of the WAC. The most recent contest was played in 2005 when the Aggies convincingly beat the Pioneers 55-42. The team revisits the Aggies eight years later trying to improve their all-time record to 6-5, but more importantly trying to regain momentum and stay competitive in conference play.
Trakh-ing Down No. 300: Coach Trakh picked up his 300th career win as a Division I head coach on Saturday, Dec. 1, against Southern Utah. The Aggies pulled off a last minute 70-68 defeat over the Thunderbirds, helping Trakh to earn the milestone victory. Trakh holds a 304-220 career record.
Rivalry Rundown
UNM: The Lobos swept the Rio Grande Rivalry Series this season with a 60-37 win over the Aggies at The Pit on Nov. 20 and a 60-44 victory in Las Cruces on Dec. 18. In game one, the Aggies had trouble making shots, but kept the stats similar to the Lobos. The Aggies collected 44 rebounds on the evening with six assists and two blocks. The Lobos were quite similar to NM State with 43 boards, but tallied 16 assists on the evening. Game two finished in similar fashion with the Lobos claiming a 60-44 victory over NM State at the Pan Am on Dec. 18. The loss at home marked the first of the 2012-13 season. Sasha Weber led the Aggies with 10 points and three rebounds on the evening. The Aggies shot 30.4 percent from the floor but tallied eight steals as a team with 27 rebounds. Those stats were not enough to hold off the Lobos who finished the game shooting 47.5 percent from the field and picking up 42 rebounds on the night.
UTEP: NM State took game one of the Battle of I-10 rivalry series with a late game battle to a 69-68 win over the Miners. UTEP maintained the lead throughout most of the game, gaining as much as a 15 point lead in the first half, but Stefanie Gilbreath finished her first Battle of I-10 game with a stellar 22 points to collect a regular-season career high. She went 5-for-8 on three pointers and picking up eight rebounds to match her career-high. Sophomore Danesia Williamson also picked up a career-high with 23 points on the game with a solid 10-of-12 at the line. Game two was set to a different tune with the Miners running away early with the 66- 44 win over NM State in El Paso. The Aggies struggled on offense, scoring just 14 points in the first half of play. The second half was a bit more positive as Williamson collected 13 points in the half with two field goals and one three pointer. She was 6-for- 6 at the line with four rebounds. Jasmine Rutledge finished the game with 11 points on the evening and compiled nine points at the line to mark a new career best for the junior.
Tournament Champs: The New Mexico State Aggies claimed the Aggie Hotel Encanto Thanksgiving Classic tournament title with a stellar 50-44 win over UC Irvine on Saturday evening at the Pan American Center. The previous night, the Aggies claimed a 55-52 win over the Patriots of George Mason. With the 2-0 record on the tournament, NM State's Kelsie Rozendaal and Sasha Weber were named to the All-Tournament team. Rozendaal was also selected tournament MVP for her work on the hardwood.
Trakh Signs Five to NLI: Head coach Mark Trakh announces that five high school players have signed National Letters of Intent to join the Aggies in the fall of 2013. Trakh is in his second season with NM State and has led the Aggies to a 1-0 start to the 2012-13 season. Joining the Aggies in 2013 are Tamera Williams of Centennial High School (Las Vegas, Nev.), Brianna Freeman of Harker Heights High School (Killeen, Texas), Vanessa Garner of Archbishop Mitty High School (Milpitas, Calif.), Moriah Mack of Reagan High School (San Antonio, Texas), and Brandee Walton of St. Mary's High School (Phoenix, Az.)
Last Season: Under the helm of first-year head coach, Mark Trakh, the Aggies finished the 2011-12 season with a 6-24 overall season record. This left NM State with a 3-11 Western Athletic Conference record. The Aggies made an appearance at the WAC Championships at the Orleans Arena in Las Vegas, Nev. (3/7). The Aggies were seeded eighth in the tournament but were quickly booted out by No. 1 66-58 State. Senior guard Tabitha Wampler was the most recent Aggie to join the 1,000 Point Club with a career 1,254 points (2008-12). She joins former teammates Danisha Corbett and Madison Spence along with Aggie great Anita Maxwell (2,601) and Andrea Kabwasa (1,788). Another highlight for the Aggies in 2011-12 was coach Trakh coaching his 500th game of his career as a Division I head coach. In his 17th year on the sidelines, the floor general notched the milestone against Hawai'i in Las Cruces Feb. 16.
Historical Season:
-- The 2012-13 season marks the 40th season of Aggie women's basketball. The first season was 1973-74.
-- This season also marks 25 years since the Aggies last NCAA tournament appearance. The 1987-88 team was the last in program history to receive an NCAA berth.
Potential Milestone: With 12 total wins this season, NM State will make its 600th victory in program history. With the current 9-9 record, the Aggies sit at 596-533 all-time.


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subset: commoncrawl


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In addition, the former 205-pound champion claims the only reason he ended up inside the Octagon was because UFC inherited his WFA contract.
"I never wanted to be in the UFC hall of fame. I don't give a fuck about UFC or their name. I never even wanted to go to the UFC! Dana White bought my contract from another organization, from the WFA. What the fuck does being in the UFC hall of fame gonna do for me and my kids' college tuition? Do you get a pension for being in the UFC hall of fame? If it gives me money for being in it every year, okay then, I want to be in it. My fans are gonna remember me as a fighter who always came to fight, always brought it. I don't do this for the recognition, to be in some hall of fame. I don't fight to be famous, I fight to pay my bills."
A fired-up Quinton Jackson (via Fight Hub) lets his mixed martial arts (MMA) fans know what he really thinks about Ultimate Fighting Championship (UFC) and its hall of fame, which I think is safe to say will not include "Rampage" anytime soon.


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Pretty solid this time. As long as page stays healthy. Tito will always be a gamble but page should make it to this fight.
Pretty solid this time. As long as page stays healthy. Tito will always be a gamble but page should make it to this fight.
The Mo/Rampage fighters yesterday and the Rampages silliness is giving me total Elite XC vibes. Not a good look for Bellator.
Excited to see if Eddie can win this, doesn't his contract give him an out to the UFC if he beats Chandler twice?
Why can't Chandler and Eddie just go to the ufc already? Lol
Those two alone have more talent then the rest of Bellator's roster.
Now, Vince Russo was nothing more than a wrestling mark when he got hired on to write kayfabe pieces for the WWF Magazine in the mid-90s. He weaselled his way into Vince's booking meetings by pushing ideas akin to ECW and Vince was desperate for something to change the product since they were crippled by the federal trial and Turner's WCW spending spree, that he listened-TO A DEGREE. That's a major factor in the Vince Russo saga, because he went through McMahon's filter and the rule was, for every one GOOD Russo idea, there were a hundred HORRIBLE ones. And even for the good ideas, Vince would tweak and alter what actually saw the air. So here's Russo claiming credit for Austin 3:16 etc, when in reality, he simply was pushing for a more crass and vulgar overall product with nudity and language.
Consider for a moment that Vince Russo was such a fucking mark that on the WWF LiveWire radio show, where he was a co-host, he smugly predicted who'd win the 1997 Royal Rumble, stating that his pick was Bret Hart. Thing is, Russo KNEW Bret was going to win since he was on creative and by stupidly trying to boost his cred with the smarks who listened and inflate his own ego, he went against a major WWF policy and McMahon CHANGED THE FINISH so Bret wouldn't win, because back then, they wanted to maintain some level of kayfabe or at the very least, an element of surprise. The number of examples of Russo's markdom are too many to list, but it's silly.
Now, the problem with Russo was that his impact became really negligible in WWF because he knew nothing about actual long-term wrestling booking and just booked raunch and tastelessness. Everything was a hotshot and everything needed to be edgy and Springer-esque and logic and continuity didn't matter- that's how you kill a territory/promoton, you need fans to have a reason to come back every week and you need to think far in advance, Russo didn't care and the result would be incoherent dribble. So when WCW started hemorrhaging money(thanks to Bischoff, Hogan and Nash etc) and was losing to WWF (when by all accounts, WWF should've gone bankrupt due to the trial costs and financial restraints that WCW simply didn't have)and looked for a new head of creative, so they brought in Vince Russo and his associate, Ed Ferrara, under the auspices that RUSSO was responsible for Austin, Rock and DX and was the major source for the WWF's turn around. WCW paid Russo a shitload of money and without the filter, he booked a horrendous product that was incomprehensibly bad, they lost something like 60 million in a year under his control and he got fired from that job..... He's the one who booked David Arquette AND HIMSELF to win the WCW title!!!
Then TNA starts up after WCW folds(shocker, but I don't blame Russo for that, since Turner's AOL merger simply hated wrestling) and despite Russo's horrible reputation from WWF and WCW and his recognized failings, Jeff Jarrett brought Russo in to book the promotion because Russo was the guy who put the World Title on Jeff and there was a sense of loyalty. Thing is, Russo can't book wrestling and he doesn't want to, he "writes action/adventure television". The result again, was a complete clusterfuck, he'd start angles and abruptly drop them, book horrible match ups that make no sense with regards to consistency or existing story lines and WOULDN'T BOOK WRESTLING ON THE CARDS. So you end up watching a two hour broadcast and there'd be maybe 22 minutes(or some goofy number close to that) of actual "in ring action". You also have a shitload of "reality TV" BS, where you get great wrestlers doing bad acting and worked-shoots and doing humiliating shit.
But still, Russo wasn't fired. He booked Jarrett on top and they were dying as a company. So when the Carter's come in with their boatloads of money from Panda Energy, they deferred to the wrestling people, like Vince Russo, because they were mindless money marks whose daughter, Dixie worked for TNA's PR firm and wanted to give her something to do with all their money, call it a "rich kid investment". Dixie running TNA basically gave Russo free reign and that's largely the reason why, despite having a major television deal with SPIKE TV and a big budget from the Carters, TNA bombed and never made an impact as the #2 company in the US wrestling scene. TNA had a chance, but under Russo's booking, he killed any chance of them succeeding. His booking was simply that bad. Watch the infamous "Last Rites" Match between Sting and Abyss where a casket comes down from the top of the building, you can actually hear the fans chanting "FIRE RUSSO!" over and over and over again. It became a popular TNA chant.
It cannot be overstated, Vince Russo is THE WORST. He is a complete and utter fucking idiot and the WORST booker in wrestling history, and that's saying something. To this day, people think that his work in WCW and TNA was all a part of some crazy conspiracy, whereby McMahon sent him over to sabotage the competition because nobody could possibly be THAT BAD. In truth, Vince Russo is and he's now completely unemployable in the wrestling industry to anybody with a brain, but he may be back with TNA. He hasn't had a single success since working under McMahon and we're looking at 14+ years now of nothing but shit. Again, Russo is the absolute WORST.
Endrant lol, I hate Vince Russo, he's a cunt.
Last edited by Fedorlei Gomipierre; 03-01-2014 at 09:44 PM.
I used to love WCW far more that WWF when I was an adolescent because of it's unpredictability. WWF was always easy to predict and always bored me until Stone Cold/Rock era when WCW crashed and burned. NWO was the best saga in pro-wrestling for me.
Don't know if Russo had a hand in it but I loved it.
Then again, I loved DX as well because I have always had the anti-authoritative streak in me.
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A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
1. A method for depositing an intermetal dielectric layer on a semiconductor substrate, the method comprising:
reacting an organosilicon compound and an oxidizing gas at RF plasma conditions sufficient to deposit an intermetal dielectric layer on the semiconductor substrate, wherein the organosilicon compound comprises one or more silicon atoms and two methyls bonded to each silicon atom, the RF plasma conditions comprise a power density less than 1 W/cm2, and the intermetal dielectric layer has a carbon content of from 1% to 50% by atomic weight and a dielectric constant of less than 3.
2. The method of
3. The method of
4. The method of
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7. The method of
8. The method of
9. A method for depositing a dielectric layer on a semiconductor substrate, the method comprising:
reacting an organosilicon compound and an oxidizing gas at RF plasma conditions sufficient to deposit a dielectric layer on the semiconductor substrate, wherein the organosilicon compound comprises one or more silicon atoms and two methyls bonded to each silicon atom, the RF plasma conditions comprise a power density less than 1 W/cm2, and the dielectric layer has a carbon content of from 1% to 50% by atomic weight and a dielectric constant of less than 3;
etching the dielectric layer to define an interconnect; and
filling the interconnect with a conductive material.
10. The method of
11. The method of
12. The method of
13. The method of
14. The method of
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16. The method of
This application is a continuation of U.S. patent application Ser. No. 10/647,959, filed Aug. 26, 2003, now U.S. Pat. No. 6,869,896, which is a continuation of U.S. patent application Ser. No. 10/229,992, filed on Aug. 27, 2002, now U.S. Pat. No. 6,734,115, which is a continuation of U.S. patent application Ser. No. 09/594,186, filed on Jun. 13, 2000, now issued as U.S. Pat. No. 6,562,690, which is a continuation of U.S. patent application Ser. No. 09/185,555, filed on Nov. 4, 1998, now issued as U.S. Pat. No. 6,303,523, which was a continuation-in-part of U.S. patent application Ser. No. 09/021,788, filed on Feb. 11, 1998, now issued as U.S. Pat. No. 6,054,379, a continuation-in-part of U.S. patent application Ser. No. 09/114,682, filed on Jul. 13, 1998, now issued as U.S. Pat. No. 6,072,227, and a continuation-in-part of U.S. patent application Ser. No. 09/162,915, filed on Sep. 29, 1998, now issued as U.S. Pat. No. 6,287,990.
1. Field of the Invention
The present invention relates to the fabrication of integrated circuits. More particularly, the invention relates to a process and apparatus for depositing dielectric layers on a substrate.
2. Background of the Invention
One of the primary steps in the fabrication of modern semiconductor devices is the formation of metal and dielectric films on a substrate by chemical reaction of gases. Such deposition processes are referred to as chemical vapor deposition or CVD. Conventional thermal CVD processes supply reactive gases to the substrate surface where heat-induced chemical reactions take place to produce a desired film. The high temperatures at which some thermal CVD processes operate can damage device structures having layers previously formed on the substrate. A preferred method of depositing metal and dielectric films at relatively low temperatures is plasma-enhanced CVD (PECVD) techniques such as described in U.S. Pat. No. 5,362,526, entitled "Plasma-Enhanced CVD Process Using TEOS for Depositing Silicon Oxide", which is incorporated by reference herein. Plasma-enhanced CVD techniques promote excitation and/or disassociation of the reactant gases by the application of radio frequency (RF) energy to a reaction zone near the substrate surface, thereby creating a plasma of highly reactive species. The high reactivity of the released species reduces the energy required for a chemical reaction to take place, and thus lowers the required temperature for such PECVD processes.
Semiconductor device geometries have dramatically decreased in size since such devices were first introduced several decades ago. Since then, integrated circuits have generally followed the two year/half-size rule (often called Moore's Law), which means that the number of devices that will fit on a chip doubles every two years. Today's fabrication plants are routinely producing devices having 0.35 μm and even 0.18 μm feature sizes, and tomorrow's plants soon will be producing devices having even smaller geometries.
In order to further reduce the size of devices on integrated circuits, it has become necessary to use conductive materials having low resistivity and insulators having low k (dielectric constant <4.0) to reduce the capacitive coupling between adjacent metal lines. Liner/barrier layers have been used between the conductive materials and the insulators to prevent diffusion of byproducts such as moisture onto the conductive material as described in International Publication Number WO 94/01885. For example, moisture that can be generated during formation of a low k insulator readily diffuses to the surface of the conductive metal and increases the resistivity of the conductive metal surface. A barrier/liner layer formed from conventional silicon oxide or silicon nitride materials can block the diffusion of the byproducts. However, the barrier/liner layers typically have dielectric constants that are significantly greater than 4.0, and the high dielectric constants result in a combined insulator that does not significantly reduce the dielectric constant.
As shown in
As devices get smaller, liner layers and cap layers having high dielectric constants contribute more to the overall dielectric constant of a multi-component dielectric layer. Furthermore, known low k dielectric materials generally have low oxide content which makes the material inadequate as an etch stop layer during etching of vias and/or interconnects. Silicon nitride has been the etch stop material of choice for making interconnect lines in low k dielectric materials. However, the silicon nitride has a relatively high dielectric constant (dielectric constant of about 7) compared to the surrounding low k dielectric layers. It has also been discovered that the silicon nitride may significantly increase the capacitive coupling between interconnect lines, even when an otherwise low k dielectric material is used as the primary insulator. This may lead to crosstalk and/or resistance-capacitance (RC) delay that degrades the overall performance of the device. Thus, the silicon nitride etch stop layers are typically removed after etching of the underlying dielectric layers.
Ideally, a low k dielectric layer having both good barrier properties for use as a liner layer and sufficient oxide content for use as an etch stop could be identified and deposited in the same chambers as existing low k dielectric materials. Such barrier layers would not increase the overall dielectric constant of the dielectric layers, and such an etch stop layer would not have to be removed after etching the underlying layers.
U.S. Pat. No. 5,554,570 describes barrier layers for use with thermal CVD silicon oxides wherein an organosilane having a C—H group is oxidized instead of silane to increase the density of deposited films and to improve adhesion between the layers. For example, a thermal CVD layer produced from tetraethoxysilane (TEOS) and ozone, may be deposited between PECVD silicon oxide films produced from an organosilicon and N2O or O2.
The barrier layers described in the '570 patent are preferably dense silicon oxide layers having low carbon contents. The dense layers are deposited using 400 W of high frequency RF power although the use of low frequency RF power is asserted to improve film stress. The barrier layers are preferably produced from alkoxysilanes or chlorinated alkylsilanes and N2O to reduce carbon content and increase the density of the layers.
The '570 patent does not identify process conditions for making barrier layers having low dielectric constants or for making etch stop layers having high oxide contents. The '570 patent also does not suggest use of the described layers as a barrier layer adjacent a low k dielectric layer or as an etch stop.
There remains a need for dielectric layers having low dielectric constants, good barrier properties, and high oxide content for use as barrier layers or etch stop layers in sub-micron devices.
The present invention provides a method and apparatus for depositing a silicon oxide layer having a low dielectric constant. The silicon oxide layer is produced by plasma assisted chemical vapor deposition of an organosilane, an organosiloxane, or combinations thereof, using RF or microwave power to generate reactive oxygen atoms. The properties of the silicon oxide layers are readily controlled by process variations, and different layers can be deposited in one deposition chamber as shown for an improved dual damascene process. In addition, the silicon oxide layers can be used as an adhesive layer between different layers, or as an intermetal dielectric layer. A preferred silicon oxide layer is produced by reaction of nitrous oxide, N2O, and a silicon compound containing Si—H bonds, such as methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2.
The silicon oxide layers are cured at low pressure and high temperature to stabilize properties. The silicon oxide layers are most preferably produced using separate applications of RF power to the deposition chamber to increase porosity of the deposited layers. The use of low levels of RF power is preferred at chamber pressures less than about 10 Torr. Microwave power is preferably provided to oxidizing gases in a dissociation chamber to control formation of reactive oxidizers without increasing the power level in the deposition chamber.
In a preferred embodiment, a silicon oxide layer is deposited on a patterned metal layer by plasma assisted reaction of one or more organosilane and/or organosiloxane compounds that include Si—H bonds.
The silicon oxide of the present invention has further utility in an integrated process for manufacture of reliable dual damascene structures in one deposition chamber to reduced capacitive coupling between interconnect lines. In a preferred embodiment, a low k dielectric film having high carbon content, greater than about 20% by atomic weight, is deposited as a via level dielectric layer. A low k dielectric film having a low carbon content, less than about 10% by atomic weight, is then deposited on the high carbon layer to form a trench level dielectric layer. A dual damascene etch then forms the trenches in the trench level dielectric layer and stops at the via level dielectric layer. After etching the vias in the via level dielectric layer, the upper surface is then planarized to leave a planar surface on the trench level dielectric layer.
The invention further provides an intermetal dielectric material (IMD) comprising the silicon oxide which is deposited on a conventional etch stop such as silicon oxide or silicon nitride. The silicon oxide can also be deposited as a thin adhesive layer.
So that the manner in which the above recited features, advantages and objects of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
For a further understanding of the present invention, reference should be made to the ensuing detailed description.
The present invention provides a method and apparatus for depositing a silicon oxide layer having a low dielectric constant, a high oxide content, and sufficient carbon content to provide barrier properties. The silicon oxide layer comprises an oxidized organosilane or organosiloxane and can be used as a lining layer adjacent other dielectric materials, as an etch stop layer adjacent dielectric materials having lower oxide content, as an intermetal dielectric layer, and as an adhesion layer between different materials. The oxidized organosilane material is deposited by plasma assisted oxidation of the organosilane or organosiloxane compounds using from about 10 W to about 200 W of constant RF power, or from about 20 W to about 500 W of pulsed RF power. The silicon oxide layer can also be deposited using frequent breaks, such as changing chambers or providing cooling time, to improve porosity. The RF power is preferably provided at a high frequency such as between 13 MHz and 14 MHz. The RF power is preferably provided in short duration cycles wherein the power is on at the stated levels for cycles less than about 200 Hz and the on cycles total from about 10% to about 30% of the total duty cycle. Intermittent RF power can operate at higher peak power levels and provide the same total power input as constant RF power at a lower power level.
Carbon which remains in the silicon oxide layer contributes to low dielectric constants and barrier properties. The remaining carbon is between about 1% and about 50% by atomic weight, and preferably includes sufficient C—H or C—F bonds to provide hydrophobic properties to the silicon oxide layer resulting in significantly lower dielectric constants and improved moisture barrier properties.
The silicon oxide layers are produced from silicon compounds that include carbon in organo groups that are not readily removed by oxidation at processing conditions. Preferably the —C—H bonds are included such as in alkyl or aryl groups, or fluorinated carbon derivatives thereof. Suitable organo groups also can include alkenyl and cyclohexenyl groups and functional derivatives. The organo silicon compounds include:
The organo silicon compounds are oxidized during deposition by reaction with oxygen (O2) or oxygen containing compounds such as nitrous oxide (N2O), ozone (O3), carbon dioxide (CO2), and water (H2O), preferably N2O, such that the carbon content of the deposited film is from 1 to 50% by atomic weight, preferably about 5 to 30%. The oxidized organo silicon layer has a dielectric constant of about 3.0 and has excellent barrier properties. The oxidized organo silicon layers further have high oxide contents in comparison to conventional low k dielectric layers and good adhesion properties.
Oxygen and oxygen containing compounds are preferably dissociated to increase reactivity when necessary to achieve a desired carbon content in the deposited film. RF power can be coupled to the deposition chamber to increase dissociation of the oxidizing compounds. The oxidizing compounds may also be dissociated in a microwave chamber prior to entering the deposition chamber to reduce excessive dissociation of the silicon containing compounds. Deposition of the silicon oxide layer can be continuous or discontinuous. Although deposition preferably occurs in a single deposition chamber, the layer can be deposited sequentially in two or more deposition chambers. Furthermore, RF power can be cycled or pulsed to reduce heating of the substrate and promote greater porosity in the deposited film.
The organosilane and organosiloxane compounds preferably include the structures:
The hydrocarbon groups in the organosilanes and organosiloxane may be partially or fully fluorinated to convert C—H bonds to C—F bonds. Many of the preferred organosilane and organosiloxane compounds are commercially available. A combination of two or more of the organosilanes or organosiloxanes can be employed to provide a blend of desired properties such as dielectric constant, oxide content, hydrophobicity, film stress, and plasma etching characteristics.
The organosilane and organosiloxane compounds are preferably oxidized during deposition by plasma assisted reaction with oxygen which is formed during the deposition process by decomposition of nitrous oxide (N2O). Nitrous oxide does not react with the organosilanes or organosiloxanes without plasma assistance, and the oxygen-nitrogen bonds are readily broken at lower energies than the bonds in the organosilanes and organosiloxanes. The oxidized compounds adhere to contacted surfaces such as a patterned layer of a semiconductor substrate to form a deposited film. The deposited films are cured at low pressure and at temperatures from about 100 to about 450� C., preferably above about 400� C. to stabilize the barrier properties of the films. The deposited film has sufficient carbon content to provide barrier properties. The carbon content preferably includes C—H or C—F bonds to provide a hydrophobic film that is an excellent moisture barrier.
The present invention further provides a substrate processing system having a vessel including a reaction zone, a substrate holder for positioning a substrate in the reaction zone, and a vacuum system. The processing system further comprises a gas/liquid distribution system connecting the reaction zone of the vessel to supplies of an organosilane or organosiloxane compound, an oxidizing gas, and an inert gas, and an RF generator coupled to the gas distribution system for generating a plasma in the reaction zone. The processing system further comprises a controller comprising a computer for controlling the vessel, the gas distribution system, and the RF generator, and a memory coupled to the controller, the memory comprising a computer usable medium comprising a computer readable program code for selecting the process steps of depositing a low dielectric constant film with a plasma of an organosilane or organosiloxane compound and an oxidizing gas.
The processing system may further comprise in one embodiment computer readable program code for selecting the process steps of depositing a liner of the oxidized organo silicon compound, depositing a different dielectric layer, and optionally depositing a capping layer of the oxidized organo silicon compound.
Further description of the invention relates to a specific apparatus for depositing silicon oxide layers of the present invention and to preferred silicon oxide films.
Exemplary CVD Plasma Reactor
One suitable CVD plasma reactor in which a method of the present invention can be carried out is shown in
The reactor 10 includes heating of the process gases and substrate, such as by resistive heating coils (not shown) or external lamps (not shown). Referring to
When susceptor 12 and the wafer are in processing position 14, they are surrounded by a an insulator 17 and process gases exhaust into a manifold 24. During processing, gases inlet to manifold 11 are uniformly distributed radially across the surface of the wafer. A vacuum pump 32 having a throttle valve controls the exhaust rate of gases from the chamber.
Before reaching manifold 11, deposition and carrier gases are input through gas lines 18 into a mixing system 19 where they are combined and then sent to manifold 11. An optional microwave applicator 28 can be located on the input gas line for the oxidizing gas to provide additional energy that dissociates only the oxidizing gas. The microwave applicator provides from 0 to 6000 W. Generally, the process gases supply line 18 for each of the process gases also includes (i) safety shut-off valves (not shown) that can be used to automatically or manually shut off the flow of process gas into the chamber, and (ii) mass flow controllers (also not shown) that measure the flow of gas through the gas supply lines. When toxic gases are used in the process, several safety shut-off valves are positioned on each gas supply line in conventional configurations.
The deposition process performed in reactor 10 can be either a thermal process or a plasma enhanced process. In a plasma process, a controlled plasma is typically formed adjacent to the wafer by RF energy applied to distribution manifold 11 from RF power supply 25 (with susceptor 12 grounded). Alternatively, RF power can be provided to the susceptor 12 or RF power can be provided to different components at different frequencies. RF power supply 25 can supply either single or mixed frequency RF power to enhance the decomposition of reactive species introduced into the high vacuum region 15. A mixed frequency RF power supply typically supplies power at a high RF frequency (RF1) of 13.56 MHz to the distribution manifold 11 and at a low RF frequency (RF2) of 360 KHz to the susceptor 12. The silicon oxide layers of the present invention are most preferably produced using low levels of constant high frequency RF power or pulsed levels of high frequency RF power. Pulsed RF power preferably provides 13.56 MHz RF power at about 20 W to about 500 W, most preferably from 20 W to about 250 W, during about 10% to about 30% of the duty cycle. Constant RF power preferably provides 13.56 MHz RF power at about 10 W to about 200 W, preferably from about 20 W to about 100 W. Low power deposition preferably occurs at a temperature range from about −20� C. to about 40� C. At the preferred temperature range, the deposited film is partially polymerized during deposition and polymerization is completed during subsequent curing of the film.
When additional dissociation of the oxidizing gas is desired, an optional microwave chamber can be used to input from 0 to 3000 W of microwave power to the oxidizing gas prior to entering the deposition chamber. Separate addition of microwave power would avoid excessive dissociation of the silicon compounds prior to reaction with the oxidizing gas. A gas distribution plate having separate passages for the silicon compound and the oxidizing gas is preferred when microwave power is added to the oxidizing gas.
Typically, any or all of the chamber lining, distribution manifold 11, susceptor 12, and various other reactor hardware is made out of material such as aluminum or anodized aluminum. An example of such a CVD reactor is described in U.S. Pat. No. 5,000,113, entitled A Thermal CVD/PECVD Reactor and Use for Thermal Chemical Vapor Deposition of Silicon Dioxide and In-situ Multi-step Planarized Process, issued to Wang et al. and assigned to Applied Materials, Inc., the assignee of the present invention.
The lift motor 14 raises and lowers susceptor 12 between a processing position and a lower, wafer-loading position. The motor, the gas mixing system 19, and the RF power supply 25 are controlled by a system controller 34 over control lines 36. The reactor includes analog assemblies, such as mass flow controllers (MFCs) and standard or pulsed RF generators, that are controlled by the system controller 34 which executes system control software stored in a memory 38, which in the preferred embodiment is a hard disk drive. Motors and optical sensors are used to move and determine the position of movable mechanical assemblies such as the throttle valve of the vacuum pump 32 and motor for positioning the susceptor 12.
The system controller 34 controls all of the activities of the CVD reactor and a preferred embodiment of the controller 34 includes a hard disk drive, a floppy disk drive, and a card rack. The card rack contains a single board computer (SBC), analog and digital input/output boards, interface boards and stepper motor controller boards. The system controller conforms to the Versa Modular Europeans (VME) standard which defines board, card cage, and connector dimensions and types. The VME standard also defines the bus structure having a 16-bit data but and 24-bit address bus.
The system controller 34 operates under the control of a computer program stored on the hard disk drive 38. The computer program dictates the timing, mixture of gases, RF power levels, susceptor position, and other parameters of a particular process. The interface between a user and the system controller is via a CRT monitor 40 and light pen 44 which are depicted in
Referring to
The signals for monitoring the process are provided by the analog input and digital input boards of system controller and the signals for controlling the process are output on the analog output and digital output boards of the system controller 34.
A process sequencer subroutine 430 comprises program code for accepting the identified process chamber and set of process parameters from the process selector subroutine 420, and for controlling operation of the various process chambers. Multiple users can enter process set numbers and process chamber numbers, or a user can enter multiple process chamber numbers, so the sequencer subroutine 430 operates to schedule the selected processes in the desired sequence. Preferably the sequencer subroutine 430 includes computer readable program code to perform the steps of (i) monitoring the operation of the process chambers to determine if the chambers are being used, (ii) determining what processes are being carried out in the chambers being used, and (iii) executing the desired process based on availability of a process chamber and type of process to be carried out. Conventional methods of monitoring the process chambers can be used, such as polling. When scheduling which process is to be executed, the sequencer subroutine 430 can be designed to take into consideration the present condition of the process chamber being used in comparison with the desired process conditions for a selected process, or the "age" of each particular user entered request, or any other relevant factor a system programmer desires to include for determining the scheduling priorities.
Once the sequencer subroutine 430 determines which process chamber and process set combination is going to be executed next, the sequencer subroutine 430 causes execution of the process set by passing the particular process set parameters to a chamber manager subroutine 440 which controls multiple processing tasks in a process chamber 10 according to the process set determined by the sequencer subroutine 430. For example, the chamber manager subroutine 440 comprises program code for controlling CVD process operations in the process chamber 10. The chamber manager subroutine 440 also controls execution of various chamber component subroutines which control operation of the chamber component necessary to carry out the selected process set. Examples of chamber component subroutines are susceptor control subroutine 450, process gas control subroutine 460, pressure control subroutine 470, heater control subroutine 480, and plasma control subroutine 490. Those having ordinary skill in the art would readily recognize that other chamber control subroutines can be included depending on what processes are desired to be performed in the reactor 10.
In operation, the chamber manager subroutine 440 selectively schedules or calls the process component subroutines in accordance with the particular process set being executed. The chamber manager subroutine 440 schedules the process component subroutines similarly to how the sequencer subroutine 430 schedules which process chamber 10 and process set is to be executed next. Typically, the chamber manager subroutine 440 includes steps of monitoring the various chamber components, determining which components needs to be operated based on the process parameters for the process set to be executed, and causing execution of a chamber component subroutine responsive to the monitoring and determining steps.
Operation of particular chamber component subroutines will now be described with reference to
The process gas control subroutine 460 has program code for controlling process gas composition and flow rates. The process gas control subroutine 460 controls the open/close position of the safety shut-off valves, and also ramps up/down the mass flow controllers to obtain the desired gas flow rate. The process gas control subroutine 460 is invoked by the chamber manager subroutine 440, as are all chamber components subroutines, and receives from the chamber manager subroutine process parameters related to the desired gas flow rates. Typically, the process gas control subroutine 460 operates by opening the gas supply lines, and repeatedly (i) reading the necessary mass flow controllers, (ii) comparing the readings to the desired flow rates received from the chamber manager subroutine 440, and (iii) adjusting the flow rates of the gas supply lines as necessary. Furthermore, the process gas control subroutine 460 includes steps for monitoring the gas flow rates for unsafe rates, and activating the safety shut-off valves when an unsafe condition is detected.
In some processes, an inert gas such as helium or argon is flowed into the reactor 10 to stabilize the pressure in the chamber before reactive process gases are introduced into the chamber. For these processes, the process gas control subroutine 460 is programmed to include steps for flowing the inert gas into the chamber 10 for an amount of time necessary to stabilize the pressure in the chamber, and then the steps described above would be carried out. Additionally, when a process gas is to be vaporized from a liquid precursor, for example 1,3,5-trisilano-2,4,6-trimethylene (1,3,5-trisilanacyclo-hexane), the process gas control subroutine 460 would be written to include steps for bubbling a delivery gas such as helium through the liquid precursor in a bubbler assembly. For this type of process, the process gas control subroutine 460 regulates the flow of the delivery gas, the pressure in the bubbler, and the bubbler temperature in order to obtain the desired process gas flow rates. As discussed above, the desired process gas flow rates are transferred to the process gas control subroutine 460 as process parameters. Furthermore, the process gas control subroutine 460 includes steps for obtaining the necessary delivery gas flow rate, bubbler pressure, and bubbler temperature for the desired process gas flow rate by accessing a stored table containing the necessary values for a given process gas flow rate. Once the necessary values are obtained, the delivery gas flow rate, bubbler pressure and bubbler temperature are monitored, compared to the necessary values and adjusted accordingly.
The pressure control subroutine 470 comprises program code for controlling the pressure in the reactor 10 by regulating the size of the opening of the throttle valve in the exhaust pump 32. The size of the opening of the throttle valve is set to control the chamber pressure to the desired level in relation to the total process gas flow, size of the process chamber, and pumping set point pressure for the exhaust pump 32. When the pressure control subroutine 470 is invoked, the desired, or target pressure level is received as a parameter from the chamber manager subroutine 440. The pressure control subroutine 470 operates to measure the pressure in the reactor 10 by reading one or more conventional pressure manometers connected to the chamber, compare the measure value(s) to the target pressure, obtain PID (proportional, integral, and differential) values from a stored pressure table corresponding to the target pressure, and adjust the throttle valve according to the PID values obtained from the pressure table. Alternatively, the pressure control subroutine 470 can be written to open or close the throttle valve to a particular opening size to regulate the reactor 10 to the desired pressure.
The heater control subroutine 480 comprises program code for controlling the temperature of the heat modules or radiated heat that is used to heat the susceptor 12. The heater control subroutine 480 is also invoked by the chamber manager subroutine 440 and receives a target, or set point, temperature parameter. The heater control subroutine 480 measures the temperature by measuring voltage output of a thermocouple located in a susceptor 12, compares the measured temperature to the set point temperature, and increases or decreases current applied to the heat module to obtain the set point temperature. The temperature is obtained from the measured voltage by looking up the corresponding temperature in a stored conversion table, or by calculating the temperature using a fourth order polynomial. The heater control subroutine 480 gradually controls a ramp up/down of current applied to the heat module. The gradual ramp up/down increases the life and reliability of the heat module. Additionally, a built-in-fail-safe mode can be included to detect process safety compliance, and can shut down operation of the heat module if the reactor 10 is not properly set up.
The plasma control subroutine 490 comprises program code for setting the RF bias voltage power level applied to the process electrodes in the reactor 10, and optionally, to set the level of the magnetic field generated in the reactor. Similar to the previously described chamber component subroutines, the plasma control subroutine 490 is invoked by the chamber manager subroutine 440.
The above CVD system description is mainly for illustrative purposes, and other plasma CVD equipment such as electrode cyclotron resonance (ECR) plasma CVD devices, induction-coupled RF high density plasma CVD devices, or the like may be employed. Additionally, variations of the above described system such as variations in susceptor design, heater design, location of RF power connections and others are possible. For example, the wafer could be supported and heated by a resistively heated susceptor. The pretreatment and method for forming a pretreated layer of the present invention is not limited to any specific apparatus or to any specific plasma excitation method.
Deposition of the Oxidized Organosilane or Organosiloxane Dielectric in a Three-Layer Gap Filling Process
The oxidized organosilane or organosiloxane layer of the present invention can be used in a three-layer gap filling process as shown in
Referring to
Referring to
For an 8″ single wafer chamber, the high frequency RF source of approximately 13.56 MHz is preferably connected to a gas distribution system and driven at about 10 to about 500 W while a low frequency RF source of about 350 KHz to 1 MHz is optionally connected to a susceptor and driven at about 0 to about 100 W. In a preferred embodiment, the high frequency RF source is driven at about 20 W to about 250 W of pulsed RF power, and the low frequency RF source is driven at about 0 to about 50 W of pulsed RF power at a duty cycle from 10% to 30%. The pulsed RF power is preferably cycled in short intervals, most preferably having a frequency less than about 200 Hz. When the high frequency RF power is constant, the power level preferably ranges from about 20 W to about 100 W.
The oxidized organosilane or organosiloxane layer is then cured at a pressure less than about 10 Torr a temperature from about 100� C. to about 450� C. Optionally, curing could be conducted after deposition of additional dielectric layers.
The above process conditions result in the deposition of a PECVD lining layer 300 (at about 2000 Å per minute) with improved barrier characteristics for the subsequent deposition of the gap filling layer 302 shown in
The process gases for the gap filling layer 302 are preferably SiH4, CH3SiH3, or (CH3)2SiH2 and 50 wt % of hydrogen peroxide (H2O2) which is vaporized and mixed with an inert carrier gas, such as helium. However, the gap filling layer can be any dielectric layer which has an acceptable dielectric constant. Alternative silicon containing compounds can be used if byproducts are vapors at deposition conditions. Preferred alternative compounds incorporate oxysilano or silano groups, such as:
The process gas flows range from 0-2000 sccm for He, 10-200 sccm for CH3SiH3, and 0.1 to 3 g/min. for H2O2. The preferred gas flows range from 100-500 sccm for He, 20-100 sccm for CH3SiH3, and 0.1 to 1 g/min. for H2O2. These flow rates are given for a chamber having a volume of approximately 5.5 to 6.5 liters. Preferably, reactor 10 is maintained at a pressure of about 0.2 to about 5 torr during deposition of the gap filling layer 302. The gap filling layer 302 may be partially cured as shown in
Gap filling layers produced from methylsilane are typically hydrophilic and have poor moisture barrier properties. When deposited on a lining layer produced from methylsilane, a gap filling layer produced from methylsilane surprisingly is hydrophobic and has good moisture barrier properties.
Referring to
A dual damascene structure which includes an oxidized organosilane or organosiloxane layers as an etch stop or as an intermetal dielectric layer is shown in
Referring again to
A preferred dual damascene structure fabricated in accordance with the invention includes a lining layer as shown in
As shown in
The metallization structure is then formed with a conductive material such as aluminum, copper, tungsten or combinations thereof. Presently, the trend is to use copper to form the smaller features due to the low resistivity of copper (1.7 μΩ-cm compared to 3.1 μΩ-cm for aluminum). Preferably, as shown in
A dual damascene structure which includes an oxidized organosilane or organosiloxane layer as an adhesive layer between a premetal dielectric layer and an intermetal dielectric layer is shown in
A preferred dual damascene structure comprising an adhesive layer in accordance with the invention is shown in
As shown in
The metallization structure is then formed with a conductive material such as aluminum, copper, tungsten or combinations thereof. Presently, the trend is to use copper to form the smaller features due to the low resistivity of copper (1.7 μΩ-cm compared to 3.1 μΩ-cm for aluminum). Preferably, as shown in
Another preferred dual damascene structure comprises silicon oxide layers having different dielectric constants to resist crosstalk between layers, and is deposited as shown in
As shown in
As shown in
The metallization structure is then formed with a conductive material such as aluminum, copper, tungsten or combinations thereof. Presently, the trend is to use copper to form the smaller features due to the low resistivity of copper (1.7 μΩ-cm compared to 3.1 μΩ-cm for aluminum). Preferably, as shown in
The invention is further described by the following examples.
The following example and demonstrates deposition of an oxidized organosilane or organosiloxane film having excellent barrier and adhesion properties. This example was undertaken using a chemical vapor deposition chamber, and in particular, a "CENTURA DxZ" system which includes a solid-state RF matching unit with a two-piece quartz process kit, both fabricated and sold by Applied Materials, Inc., Santa Clara, Calif.
Non-Pulsed RF Power
An oxidized dimethylsilane film was deposited at a chamber pressure of 3.0 Torr and temperature of 15� C. from reactive gases which were flowed into the reactor as follows:
The following hypothetical examples describe deposition of an oxidized organosilane or organosiloxane film of the present invention. These examples are written for the chemical vapor deposition chamber described in the prior example.
Pulsed RF Power
An oxidized 1,3,5-trisilano-2,4,6-trimethylene (cyclic) film is deposited at a chamber pressure of 3.0 Torr and temperature of 15� C. from reactive gases which flow into the reactor as follows:
An oxidized 1,3-dimethyldisiloxane film is deposited at a chamber pressure of 3.0 Torr and temperature of 15� C. from reactive gases which are flowed into the reactor as follows:
An oxidized 1,3-dimethyldisiloxane film is deposited at a chamber pressure of 3.0 Torr and temperature of 15� C. from reactive gases which are flowed into the reactor as follows:
While the foregoing is directed to preferred embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims which follow.
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text: Your investment in Scouting plays a vital role in helping to build character and create a foundation of leadership for the youth of our community. Your Friends of Scouting dollars work to provide a year-around program of activities, leadership training, and community service that instills positive ethical and moral values in our youth. The Dan Beard Council serves over 33,000 young people and their families. Through the Scouting program they learn teamwork, participate in new and adventurous opportunities, and build positive character traits. Scouting programs like Exploring even offer a look at exciting career development opportunities. With your support, we can grow our community and build leaders for tomorrow.


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Monday, April 29, 2013
The Sangaree Elementary Staff participated in an Amazing Race team building activity on staff development day, Wednesday April 10 to promote wellness at the school. Sangaree Elementary plans to incorporate wellness into all facets of its school community. The school want to promote health by encouraging staff, parents, and students to exercise, eat a balanced diet and find ways to reduce stress.
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It was certainly an interesting year for sports in the High Country, to say the least. We saw two major coaching changes at Ashe County High School, a legendary college coach get forced out at Appalachian State, and the best soccer season in ACHS history. Here are the top five sports stories of 2012.
5. Brian Hampton returns to Ashe County
In December of 2011, Bill Strong announced his retirement from coaching Husky football, which left the door wide open for Ashe County native Brian Hampton to come and take over the ACHS football program.
Faced with the tough task of replacing some outstanding players, including defensive player of the year Josh Wineberg, starting quarterback Sam Gammons, conference leading receiver Matthew Sexton and starting tailback Kole Goss, Hampton was able to put the Huskies in the playoffs for the 10th consecutive season, and guided the junior varsity squad to the 2012 Mountain Valley Conference Championship.
4. ACHS soccer team has record-setting season
The Husky soccer team, led by MVAC Coach of the Year Wes Rousseau and MVAC Player of the Year Miguel Ramos, finished the best season in school history.
While the playoff run ended much sooner than anybody had expected, there is still no denying the tremendous season that ACHS put together. The Huskies finished the season with a record of 21-2-1, the best winning percentage and the highest win total in school history.
Ashe reeled off 19 consecutive wins before a tie with Forbush on Oct. 22. The Huskies finished the year without a single MVAC loss, which gave them the conference championship.
3. Josh Wineberg wins wrestling state championship
Anytime a team or athlete wins a state championship, it has to be considered one of the top sports moments of the year.
Wineberg did just that when he captured the 2A State Championship in the 285-pound division. Wineberg defeated East Davidson's Josh White by a 2-0 decision to win the title.
In regional action, Wineberg had lost to White, but it would be the Husky grappler that won the top prize, the coveted state championship.
Wineberg signed to play football at Western Carolina, where he was a key part to the Catamounts' offensive line this year.
2. Jerry Moore let go at Appalachian State
The most controversial event of the 2012 year had to be the recent termination of Coach Moore as Appalachian State University's head football coach.
Moore was a legend at the school, winning more games than anybody in ASU history, and more games than any coach in Southern Conference history.
Moore finished with a record of 215-87 at ASU and a SoCon record of 146 wins against just 40 defeats in 24 years with the Mountaineers.
Coach Moore had wanted another year of coaching, but ASU Athletics Director Charlie Cobb would not grant him that wish. Instead, assistant head coach Scott Satterfield will take over a program that rose to prominence over the last eight years. During that span, ASU won three FCS National Championships, and won or shared the Southern Conference Championship in seven of those eight seasons.
1. Marc Payne retires
The top story of 2012 had to be the retirement of Ashe County head coach Marc Payne. Payne coached high school basketball for 37 years and picked up 574 victories along the way.
Even more important than the wins, 17 Coach of the Year awards, and the 13 conference championships Coach Payne won during his career, was the number of student athletes that he has influenced over nearly four decades of coaching. Former players and students never had a bad word to say about Payne, and were honored to have played for him at some point, or to have had him as a teacher.
Payne coached at Beaver Creek High School for 14 years, and then made the move to Watauga, where he coached for 13 years. In his final stop, Payne returned home to coach the Huskies for the previous 10 years.


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My Body Stories Navy Weight Requirements
I have been overweight most of my life and have been active on and off throughout as well. I began seeing the effects of my weight in high school, and got my father to sign me up for a gym membership, which I kept for about 3 years until dropping it to change gyms. I went from 197 down to 160 in a matter of about 3 to 4 months. BUT my right knee continued to give me problems. Lo and behold, when I had my ACL strained back in 2008, no one knew I had torn my meniscus. By December 2012 I had only a few strands of my ACL intact. December 13, 2012, I received knee surgery. My weight of 160 was buried in its grave, and I quickly gained weight until I was nearly 250 pounds. January 2014 I recommitted to fitness and continued my workouts through the gym on a military base. I have lost roughly 50 pounds. My Navy friends keep me motivated, and I have also decided to eventually pursue a career in the Navy. So I had a deadline to make - to be military fit in 4 years if I am able to get my BS degree.Going To Love Myself
As I'm reading all of these entries, I have tears streaming down my face...at the age of 25, I've struggled with my weight since middle school. Throughout my childhood I was stick thin and could eat anything without thinking twice. Fast forward to middle school and my first experience with being called fat, and that was when I realized I hated my body. I've never been naturally athletic. I've struggled to run for more than a few minutes at a time for as long as I can remember--even at my lowest weight I wasn't in shape.View More Submit Story
News Image Upload Guidelines FAQ
Among the most common questions we get asked is: why was my photo upload rejected? So we thought we'd put together this FAQ... (And we'll update this with some picture examples soon!) Things that will get your uploaded picture rejected:The War on Female Nipples Impacts Body Image Too
This issue's feature story for the newletter was going to be about our updated guidelines for picture uploads, but a little Facebook snafu provided a more provocative topic. On our Facebook page (which you should follow if you don't already), we regularly post articles of interest about body image and body positivity. Sometimes these venture into areas that some people might consider risqué. We try to flag such articles as NSFW (not safe for work) or somehow indicate that the content might be problematic. Usually the thumbnail images accompanying articles have been chosen to be "Facebook friendly" (e.g. no female nipples), but occasionally they are borderline.View More
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The My Body Gallery project needs real Women! We need your help to develop the project and build a collection of photos that will help more women see themselves more clearly. Upload a picture of your full body. Our photo submission process also allows you to block out part of the image to protect your identity, if you wish. Please note that you must be 18 to upload a photo.
Test your body-image awareness with our quiz! The results might surprise you...BEGIN QUIZ


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One for t-mobile and one for verizon !
if iPhone 4 is version 3,1, what are 3,2 and 3,3?
iPhone 4's internal version is 3,1, so what then are the iPhone 3,2 and iPhone 3,3 versions referenced in the just-posted Apple TV iOS firmware? Seth Weintraub from 9to5Mac speculates:
Verizon? Sprint? China Mobile? T-Mobile? Antennas? All very good questions. No answers yet.
To put things in context, the original iPhone 2G was iPhone 1,1, iPhone 3G was iPhone 1,2 and iPhone 3GS was 2,1. So we're looking at the difference between iPhone 2G and iPhone 3G, which mainly consisted of a new shell and new 3G radio, not the completely revved up guts the iPhone 3GS or iPhone 4 got.
CDMA (like Verizon, Sprint, or some parts of Asia), or the higher frequency AWS radios needed for US T-Mobile and new Canadian providers like Wind and Videotron are certainly possibilities. Since there are two new product versions, how about both?
And if that's not tease enough, there's also reference to a 20547 unknown device. New iPad, iWatch, iOS desktop? Who knows, but feel free to give us your best guesses in the comments.
Have something to say about this story? Leave a comment! Need help with something else? Ask in our forums!
Reader comments
if iPhone 4 is version 3,1, what are 3,2 and 3,3?
One is the new 7 inch iPad and the other is the a new iPhone for sprint. My 2c.
I don't know, call me crazy, but those are probably for international carriers as at&t had apple sign a five year exclusive contract in 2007 making the earliest date for an iPhone on either verizon, sprint or t-mobile 2012. conveniently enough that is when verizon plans on having the their 4G network fully functional, my guess is they are already developing this phone (by that I mean apple) so there is a chance that one of these two is that prototype, but only time will tell.
Since Apple has made it clear the external antenna is not an issue I wouldn't expect a new case design. I would bet on T-Mobile and Non-USA CDMA carriers before a US one, although I bet they could get sprint to jump through many, many hoops for this one.
I am hoping iPhone 5 shell remains with internal isolation of the antenna and 64GB storage and 4G.
@Raptormd Couldn't agree more. But I do think the next iPhone won't have death grip issues!
How many non US CDMA carriers are there? I can count them one hand. None. China has WCDMA which is a gsm derivative.
One is for GSM phone firmware and the other is for CDMA and other differences like that. Here, look: http://theiphonewiki.com/wiki/Firmware#iPhone_4


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Great conversations starters will be found in this selection of games specifically designed in mind for large groups, social gatherings, and dinner time fun. Perfect for getting to know new roommates or the in-laws.
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Feeding My Hair with an Indian Head Massage
I gave my digestion a break today by skipping solid food and drank Energy Soup (inspired by Ann Wigmore) all day. So, I decided to feed my hair instead with an Indian Head Massage.
Our climate's dry here in Los Angeles (a dessert), and the sun's been bright this summer, reeking havoc on my locks. My hair felt dry and my ends brittle. So, I took my bottle of organic, extra-virgin, cold pressed olive oil into the bathroom, and poured a heaping tablespoon into the palm of my hand. I massaged the oil into my scalp and hair, and worked it through to the ends. Note to self: next time, pour the oil directly onto scalp…I have a lot of hair.
Our skin is our largest organ, and you know I like to avoid putting things on my skin that I can't drink since it absorbs into my blood stream. Well, did you know our scalp is one of the most absorbent areas of our skin? Mine drank up more than a 1/4 cup of olive oil, and was happy for the increased blood flow and circulation from the massage.
I first discovered this massage, also known as Indian Head Massage, at a spa in Portland, OR. It alleviates stress and tension, increases blood flow and circulation, and promotes hair growth. Supposedly, this treatment done in the evening before bed helps alleviate sleeping issues, so I'm hoping it will cure the insomnia I've been suffering from all week long.
Choose almond, coconut, sesame, and/or olive oil since they moisturize, condition our hair, stimulate hair growth, and have a neutral scent. After your massage, wash your hair, and dry. I always choose to air dry.
Try this trick:
tags: asian, Beauty, clean, condition, deep, do it yourself, eco, extra virgin, green, hair, hair growth, hair loss, head, healthy, how to, indian, LIFESTYLE, massage, moisture, moisturize, natural, olive oil, organic, protect, raw, raw food diet, remedy, scalp, shampoo, stimulate, treatment, Vegan, Vegetarian, wash
categories: - Beauty - Green Living - Health - LIFESTYLE
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The Aiken County Sheriff's Office is searching for a man said to be connected with a Monday night shooting in Graniteville.
Deputies responded to 340 Aiken Road about 10:20 p.m., on Monday, where one of the victims told officers that the suspect, 20-year-old Devron Duncan, approached the other victims and her while presenting a handgun, according to a sheriff's report.
The caller told officers Duncan fired two shots toward his girlfriend and her children while they sat in a vehicle and fired again as she ran toward the entrance to an apartment.
One victims suffered injuries from being physically assaulted by Duncan, police said. She was treated at Aiken Regional Medical Centers.
The victim told officers she did not know who dropped her off at the hospital, and hospital staff did not see who dropped her off, according to the report.
Duncan fled the area in a vehicle before law enforcement arrived.
Investigators have obtained warrants for Duncan for attempted murder and other associated charges, police said.
Anyone with information on the whereabouts of Duncan is asked to call the Sheriff's Office at 803-648-6811, or Crime Stoppers of the Midlands at 888-CRIME-SC.
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Physician Consortium for Performance Improvement
The AMA-convened PCPI works to enhance quality and patient safety.
About PCPI
A leader in health care quality improvement, the AMA-convened Physician Consortium for Performance Improvement® (PCPI®) is a national, physician-led program dedicated to enhancing quality and patient safety. The ongoing mission of the PCPI is to align patient-centered care, performance measurement and quality improvement.
The PCPI develops evidence-based performance measures that are clinically meaningful, meet the current and future needs of the PCPI membership and are used in national accountability and quality improvement programs.