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A device layer layout methodology, and method and apparatus for patterning a photosensitive layer. Device features are placed on lines running in rows and/or columns during layout. The lines and/or columns are extracted from the database to produce a layout of the phase-edge phase shifting layer. The photosensitive layer may be exposed to a mask corresponding to this layout, to produce latent image of the rows and/or lines. The photosensitive layer is also exposed to the device layer layout to expose unwanted portions of the phase-edge layer. Methods of forming a variety of device features, including contact/via openings and contact/via plugs are disclosed.
1. A method of patterning a photosensitive layer comprising the steps of:
providing said photosensitive layer on a substrate;
exposing said photosensitive layer to a first mask having a pattern of first regions and second regions, said first regions and said second regions transmitting at least a portion of radiation incident thereon, said first regions phase-shifting radiation transmitted therethrough with respect to radiation transmitted through said second regions, said pattern arranged to produce a plurality of substantially unexposed lines in said photosensitive layer;
exposing said photosensitive layer to a second mask comprising a plurality of device features, each of said plurality of device features overlying at least a portion of one of said lines;
wherein said first mask and said second mask are produced from a device layer layout produced by a method comprising the steps of:
defining said plurality of lines;
defining said plurality of device features, wherein said features on said second mask comprise segments extending in a first and a second direction; and,
placing each of said plurality of device features in a known relationship with respect to one of said lines.
2. The method as described in claim 1 wherein said pattern of said first regions and said second regions are arranged in rows and columns, each of said segments extending in said first direction overlying one of said lines arranged in said rows, and each of said segments extending in said second direction overlying one of said lines arranged in said columns.
3. The method as described in claim 2 wherein said photosensitive layer comprises a positive photosensitive layer, said method producing photosensitive members having a shape corresponding to said plurality of features and having a linewidth produced by said substantially unexposed lines.
4. The method as described in claim 2 wherein said photosensitive layer comprises a negative photosensitive layer, said method producing trenches in said photosensitive layer having a shape corresponding to said features and having a linewidth produced by said substantially unexposed lines.
5. The method as described in claim 1 wherein said lines of said layout are arranged in a plurality of rows and a plurality of columns, wherein said plurality of rows are used to produce said first mask having said first regions and second regions arranged such that said plurality of unexposed lines are substantially arranged in said rows, said method comprising exposing said photosensitive layer to a third mask, said third mask produced from said columns, said third mask comprising a pattern of third regions and fourth regions, said third regions and said fourth regions transmitting at least a portion of radiation incident thereon, said third regions phase-shifting radiation transmitted therethrough relative to radiation transmitted through said fourth regions, said pattern of said third regions and said fourth regions arranged to produce a plurality of substantially unexposed second lines in said photosensitive layer, said substantially unexposed second lines arranged in said columns, said first mask and said second mask having an aligned position such that said rows and said columns have intersections thereof, wherein said second mask has an aligned position with respect to said first and said third mask such that said features are disposed over said intersections.
6. The method as described in claim 5 wherein said photosensitive layer comprises a negative photosensitive layer, and wherein said features comprise contact or via openings.
7. The method as described in claim 5 wherein said photosensitive layer comprises a positive photosensitive layer, and wherein said method further comprises steps of:
providing a conductive layer on said substrate prior to said step of providing said photosensitive layer;
developing said photosensitive layer subsequent to said steps of exposing said photosensitive layer to said first, said second, and said third masks, to form a developed photosensitive layer exposing first regions of said conductive layer and masking second regions of said conductive layer; and
removing first portions of said conductive layer from said first regions, while leaving second portions of said conductive layer in said second regions.
8. The method as described in claim 7 further comprising depositing a dielectric layer over and around said second portions of said conductive layer.
9. The method as described in claim 8 wherein said dielectric layer is deposited to a thickness such that said second portions are covered by said dielectric layer, said process further comprising removing a portion of said dielectric layer to expose an upper region of said second portions of said conductive layer.
10. The method as described in claim 1 wherein said photosensitive layer comprises a positive photosensitive layer, said method producing photosensitive members having a shape corresponding to said plurality of features and having a linewidth produced by said substantially unexposed lines.
11. The method as described in claim 1 wherein said photosensitive layer comprises a negative photosensitive layer, said method producing trenches in said photosensitive layer having a shape corresponding to said features and having a linewidth produced by said substantially unexposed lines.
This is a divisional of application Ser. No. 08/413,405, filed Mar. 30, 1995, now U.S. Pat. No. 5,595,843.
1. Field of the Invention
The present invention relates to the field of semiconductor device fabrication, and more specifically to a methodology for laying out a device layer, a mask set produced by the layout, and a method of patterning a photosensitive layer.
2. Background Information
In the semiconductor industry, there is a continuing effort to increase device density by scaling device size. In order to form small dimensioned features, a variety of phase-shifting techniques have been proposed. In some of these methods, features are defined by forming open regions in an opaque layer on a mask or reticle (referred to generally as "mask" herein). The open regions transmit substantially all radiation incident thereon. Near or surrounding these open regions are phase-shifters which also transmit some or all of the radiation incident thereon, but which shift the phase of the radiation approximately 180° relative to the openings forming the features. In this way, the radiation from the phase-shifter destructively interferes with the radiation from the feature, providing good contrast at the feature's edge.
A further method of using phase-shifting to form small features may be referred to as phase-edge phase-shifting. In this method, the destructive interference at the interface of two regions that transmit radiation approximately 180° out of phase is used to form the feature. This method is illustrated in FIG. 1. Mask 100 comprises a first region 101, which may be referred to as the 0° phase, and a second region 102, which may be referred to as the 180° phase. As shown, the second region 102 is adjacent to the first region 101 along interface 105.
Intensity curve 110 shows the intensity of radiation at the image plane, I, as a fraction of the intensity incident on the mask 100,IO. As shown, the intensity 111 underneath region 101 away from the interface 105 is nearly equal to the intensity incident on region 101. Similarly, the intensity 112 underneath section 102 away from interface 105 is nearly equal to the intensity incident on region 102. However, underneath the interface 105 there is a sharp drop 115 in the intensity at the image plane due to the destructive interference between the radiation transmitted through regions 101 and 102. The exposure conditions can be adjusted such that the portion of the photosensitive layer underneath interface 105 is substantially unexposed, while portions of the photosensitive layer under regions 101 and 102 away from interface 105 are substantially exposed. In the case of a positive photoresist layer, after exposure and development, a thin line of photoresist will remain in the region underneath interface 105, while the remainder of the photoresist layer will be removed. In the case of a negative photoresist layer, after exposure and development, the unexposed region underneath interface 105 will be removed while photoresist under the remainder of the photosensitive layer will be hardened, and will remain after development. Thus, the phase-edge method may be used to form a narrow line in a positive photoresist layer, or a narrow opening in a negative photoresist layer.
One problem in implementing the phase-edge method is the difficulty in producing the device layer layout used to produce the masks used to define the device layer in the lithographic process. The phase-edge method typically requires at least two masks to implement. One mask, which may be referred to as the phase-edge mask, comprises phase-shifted regions to produce the small dimension lines described above. A second mask is used to eliminate unwanted lines produced from the phase-edge mask. The second mask may comprise device features defined by opaque and transparent regions on the mask. As will be described below, while there are known methods to produce a layout of the device features, there is no simple way to generate a layout of the phase-edge layer.
Referring to FIG. 2, a plan view of a portion of a device layer is shown. As can be seen, a plurality of features 201-205 are present. It will be appreciated that the features 201-205 are for illustration purposes, and the device layer may have many different features and/or the features may have different configurations, depending upon the device layer being formed. It will further be appreciated that there will typically be many more features in other regions of the device layer not shown.
To form the features of FIG. 2 using the phase-edge method, a mask such as that shown in FIG. 3 may be employed. As shown, the mask 300 comprises a plurality of 180° regions and a plurality of 0° regions. As described above, in the case of positive photoresist, a thin line will be formed at every interface.
Note that since the 0° regions and the 180° regions are two dimensional regions, it is not practical to form an isolated 0°/180° interface. That is, an isolated line cannot be formed by a mask such as mask 300 of FIG. 3, but rather loops or closed polygon structures are formed. Thus, as mentioned above, a second exposure must be performed to remove unwanted portions of the phase-edge layer. For example, a photoresist layer may be exposed to mask 300 and to a mask having features 201-205, etc., prior to development. The exposure to mask 300 will produce very small dimension lines, and the exposure to the second mask will eliminate unwanted portions. For example, a latent image corresponding to the interface 301 will be formed in the photosensitive layer due to exposure to mask 300, while portions 301a of the latent image will be exposed and therefore eliminated after exposure to the second mask. Thus, in a positive photosensitive layer, a thin line corresponding to interface 301, without sections 301a, will remain.
Many techniques are known for generating a layout such as that shown in FIG. 2. Typically, circuit requirements, and various design rules, are input into a design system which then creates a layout. For example, as is well known, device layers are typically laid out with reference to points of a pre-defined grid. The grid points may be spaced at, for example, 0.1μ. Features are defined in relation to the grid, by placing all vertices at some grid point. For example, referring to FIG. 2, corner 250 of feature 201 may be defined at a certain grid point. If feature 201 is to have a width of 0.6μ, corner 251 will be spaced six grid points to the right. Similarly, the other vertices points 252-255 will be placed at the appropriate grid points to give feature 201 the desired shape, width, and length. In placing features such as features 201-205, the program will take in to account the desired circuit, as well as various design rules. For example, features typically have minimum dimensions (for example, a design rule may be that a feature must be at least 0.6μwide). In addition, the design rules include a minimum spacing requirement between any portion of the features. Also, the design rules typically specify a minimum pitch between features. For example, if the minimum pitch were 1.2μ, then a portion of, for example, feature 203 such as edge 203a must be at least 1.2μfrom edge 204a of feature 204. In addition, there may be other design rules dictated by device or process requirements that must be obeyed by the program in creating the layout.
As mentioned above, methods of automatically producing a design layer layout wherein desired circuits, and design rules, are specified and a corresponding design is then automatically produced are well known in the art. The design system typically may have one or more compaction routines which shrink or otherwise optimize the layout. Although a device layer comprising features such as those shown in FIG. 2 may be generated automatically, it is not an easy task to generate the layout for mask 300. This is because existing systems have no way to convert existing rules, using existing systems, into a layout of regions such as that shown in FIG. 3. Further, the existing systems have no way to convert a layout for features such as those shown in FIG. 2 into a layout for a reticle 300 of FIG. 3 using existing rules and design systems. While a small portion, such as that shown in FIG. 3 may be drawn by hand, such would be an extremely difficult task for an entire chip, as many devices contain millions of transistors, and devices in the future can be expected to contain tens of millions of transistors.
The phase-edge technique has also been proposed to form contacts in a negative resist. In one method, a negative photosensitive layer is exposed to a first reticle having strips of alternating 0° and 180° regions to form a first set of phase-edges. Then, the photosensitive layer is exposed to a second reticle also having strips of alternating 0° and 180° regions, to form a second set of phase-edges which are arranged substantially orthogonal to those of the first reticle. After these two exposures, a small dimension latent image is formed at every intersection of the first and second sets of phase-edges. Finally, a third exposure is performed using a standard contact mask to expose those latent images where no contact is desired, and mask those where a contact opening is desired. However, as described above in relation to FIG. 2, it is difficult to produce automatically a layout of the masks using known layout techniques.
It should also be noted that at least one further photolithographic technique, referred to herein as the single-edge feature method has the same layout problem as described above for the phase-edge technique. In this method, a layer of, for example, oxide may be deposited on a substrate. The layer is patterned using a mask similar to mask 300 of FIG. 3, except that one of the 0° or 180° regions are replaced with opaque regions, while the other of the 0° and 180° regions remain transmitting. If desired, enhancement techniques such as phase-shifting may be used. After development of, e.g., a positive photosensitive layer, and etching of the oxide, oxide regions corresponding to the opaque regions remain. For example, referring to FIG. 4A, an oxide region 402 on a substrate 401 is shown. Next, a layer 403, such as polysilicon, is deposited. Following deposition of layer 403, an anisotropic etch is performed to leave structures similar to sidewall spacers along the edges of the region 402. The substrate after etch is shown in FIG. 4B. After removal of the oxide 402, the single edge features 403a remain, as shown in FIG. 4C. By use of this method, the single edge features 403a may have a dimension of approximately 0.1μor less. This method may be used to form, for example, a polysilicon gate of a transistor. Since the single edge feature 403a is formed along all edges of oxide region 402, it has the loop like structure described above in connection with the phase-edge layer. Therefore, deposition of a further photosensitive layer, and exposure to a second mask (such as mask 200) is performed, followed by a polysilicon etch to remove unwanted portions of spacer 403a. The patterning and etch steps may be performed either before or after removal of the oxide layer 402. This method has the same problem as described for the phase-edge method, wherein it is extremely difficult to layout the layer which forms the regions 402.
What is needed is a method for producing a layout for the phase-edge technique, or for the single edge feature technique. The method should provide a circuit designer with an efficient way to automatically produce a layout from which the phase-edge layer and feature layer may be produced. Further, methods of patterning photoresist layers using masks designed according to the layout method are needed.
A method of producing a device layer layout is disclosed. A plurality of lines are defined, and the device features are placed on the lines. In this way, a phase-edge or single edge feature mask can be produced from the layout to pattern an image corresponding to the lines. A second mask having the device features overlying the lines is also produced from the layout and is used to preserve wanted portions of the image and to remove unwanted portions of the image.
Additional features and benefits of the present invention will become apparent from the detailed description, figures, and claims set forth below.
The present invention is illustrated by way of example and not limitation in the accompanying figures in which:
FIG. 1 illustrates the intensity profile obtained in the phase-edge technique.
FIG. 2 illustrates a portion of a prior art device layer.
FIG. 3 illustrates a portion of a phase-edge mask needed to pattern the features of FIG. 2.
FIGS. 4A, 4B, and 4C illustrate fabrication of a single edge feature.
FIG. 5 illustrates the layout of a portion of a device layer according to a currently preferred embodiment of the present invention.
FIG. 6 illustrates the phase-edge layer extracted from the layout shown in FIG. 5.
FIG. 7 illustrates a phase-edge mask fabricated according to the layout of FIG. 6.
FIG. 8 illustrates features formed according to the method of the present invention.
FIG. 9 illustrates use of the present invention to layout a contact/via opening layer.
FIG. 10 illustrates a first phase-edge layer obtained from the layout of FIG. 9.
FIG. 11 illustrates a second phase-edge layer obtained from the layout shown in FIG. 9.
FIG. 12 illustrates the latent image formed in a photosensitive layer after exposure to the masks shown in FIGS. 10 and 11.
FIG. 13 shows device features formed after exposure to the masks of FIG. 10, 11, and the contact layer.
FIGS. 14A-14D illustrate fabrication of contact plugs using the present invention.
FIG. 15 illustrates a plurality of aerial images at various defocus positions obtained with the contact/via plug lithography method of the present invention.
FIG. 16 illustrates a close-up view of a portion of the aerial images of FIG. 15.
FIG. 17 illustrates the modulation transfer function of the contact/via plugs of the present invention.
A device layout methodology and a method and apparatus for forming a device layer is disclosed. In the following description, numerous specific details are set forth such as specific materials, mask patterns, dimensions, process steps, etc. in order to provide a thorough understanding of the present invention. It will be obvious, however, to one skilled in the art that these specific details need not be employed to practice the present invention. In other instances, well known materials or methods have not been described in detail in order to avoid unnecessarily obscuring the present invention. In addition, although the present invention is described in conjunction with the phase-edge technique, it will be appreciated that the present invention may also be used in the practice of, for example, the single-edge feature technique.
For convenience, regions are nominally referred to as the 0° phase, or as the 180° phase, and regions may nominally be referred to as phase-shifted ±180° relative to each other. It will be appreciated that this nomenclature is not necessarily meant to indicate the actual phase of radiation transmitted through a region or the actual phase difference between two regions. It will also be appreciated that any nominal or actual phase of a region or phase difference between regions encompasses all 360° multiples of the phase or phase difference. It will further be appreciated that for the phase-shifted mask to be effective, the phase difference between a phase-shifting element and a proximate or adjacent opening does not need to be exactly 180° but may be anywhere between approximately 160°-200° (or 160°-200° plus a multiple of 360°).
In many instances, a phase difference as close as possible to 180° is desirable to maximize the destructive interference so that, referring to FIG. 1, the difference in intensity between the bottom of spike 115 and the levels 111/112 is maximized. In other cases, a phase difference other than 180° and even outside of the ranges given above may be sufficient. In general, any difference in phase creates a spike in intensity such as that shown in FIG. 1. In this regard, it will be appreciated that what is desired is that a portion of the photosensitive layer underneath an interface such as interface 105 of FIG. 1 is substantially unexposed, while portions of the photosensitive layer a distance from the interface are substantially exposed.
Whether the phase difference and resulting intensity profile are acceptable will depend upon the lithography process, materials, and process and device requirements. For example, a negative photosensitive layer is substantially exposed when the exposure is such that, upon development, a sufficient amount of the substantially exposed portion of the photosensitive layer remains for the purposes of the process in which the photosensitive layer is used. For a positive photosensitive layer, sufficient exposure is such that, upon development, the substantially exposed portion of the photosensitive layer is sufficiently removed for the purposes of the process in which the photosensitive layer is used. Similarly, a negative photosensitive layer is substantially unexposed when the exposure is such that the substantially unexposed portion of the photosensitive layer is sufficiently removed for the process in which the photosensitive layer is used. Finally, a positive photosensitive layer is substantially unexposed when the exposure is such that the substantially unexposed portion of the photosensitive layer remains in an amount sufficient for the process for which the photosensitive layer is used.
In the present specification, device features, or a portion of a device layer are illustrated in the accompanying drawings. As is well known, device features of a device layer exist as physical structures on a substrate. These device features on a substrate are formed using a mask having a corresponding pattern thereon. The pattern on the mask may be a negative or positive image of the device layer to be formed, and may be, for example, at some magnification, such as 5:1. Finally, a layout of the features of a device layer exist in the design system database, as is well known. Since the layout, features on the reticle, and features on the substrate correspond to one another, and are visually similar on a conceptual level, the same figure may be used interchangeably to illustrate the features on the substrate, and/or the features on the mask, and/or the features of the layer layout as is exists in the database, depending upon the context.
As described earlier, although the layout for conventional features may be produced automatically by specifying circuitry, and design rules, there is no simple way to automatically produce a layout for the phase-edge portion of a device layer. Therefore, in the present invention the conventional device features are laid out along lines. In general, in a preferred embodiment, the lines are substantially straight lines, which may be arranged such that some lines intersect others in, for example, a substantially orthogonal relationship. From the present specification it will be appreciated that other arrangements may be used, so long as the relationship between the lines and features is known, so that the layouts for masks may be produced as described herein. In the following description, the lines may be described as being in rows and columns, or as being horizontal or vertical. It will be appreciated that such nomenclature is for purposes of illustration and not meant to indicate any absolute orientation. Referring now to FIG. 5, the layout methodology of the present invention is illustrated. A plurality of vertical lines 520-527, and a plurality of horizontal lines 530 and 531 are defined. These lines may be pre-defined with respect to the grid system described earlier, or may be defined in conjunction with placement of the features. That is, as the design systems' program encounters a first feature, it defines a line with respect to that feature, and then defines subsequent lines with respect to this line, or with respect to subsequent features.
In one embodiment, the lines may be defined in a periodic manner as shown in FIG. 5 for lines 520-527, with each line spaced a distance equal to approximately the minimum pitch or greater. Alternatively, the lines may be placed irregularly or only where needed, as shown for lines 530 and 531. Any combination of periodic lines or irregularly placed lines may be used. For example, the lines may be periodic for a distance, and then skip a distance. The lines may be pre-defined, such that the system first defines the lines, and then places features on the pre-defined lines as the layer is created. Alternatively, the lines may be created as the device layer layout is created - i.e., lines are created as features are defined. In general, whether the lines are pre-defined or are defined as the system creates the layout, a series of lines should be placed at approximately the minimum pitch.
For example, referring again to FIG. 5, the lines 520-527, and 530-531 may be defined by the system before the features are laid out. Next, as the system creates the layout which is to have features similar to those shown in FIG. 2, for example, the features are placed along the lines 520-527. As can be seen, vertical segments of the features are placed along vertical lines, and horizontal segments are placed along horizontal lines. For example, segment 501 a of feature 501 is placed along vertical line 521, while horizontal segment 501 b is placed along horizontal line 530. Next, all other features are placed along one of the lines as each feature is defined by the design system.
In the case where the lines are defined as the layout is created, the system checks to see if there are lines nearby that have been defined during the placement of a previously defined feature. If so, a new feature is placed on the previously defined line. When the system defines a feature which is not on or near a line previously placed by the system, the system defines a new line and places the feature along that line. As described above, the line should be spaced apart from other lines at approximately the minimum pitch, or greater.
Thus, as the device layer is produced, all horizontal and vertical segments of all features fall on one of the lines. Referring briefly to FIG. 2, note that vertical segment of 201a of feature 201 is offset slightly from vertical segment 202a of feature 202. In the layout shown in FIG. 5, segment 202a would fall approximately between lines 521 and 522. In contrast, in the present invention, the program requires that segment 502a of feature 502 be on a line, such as line 521 as shown. Alternatively, it may be that feature 502 could be placed such that segment 502a is disposed on line 520 or 522, for example. The program may be designed to place a feature on the closest available line, or may have other criteria specified by the circuit design with regard to placement of features. Similarly, feature 506 has been placed such that vertical segment 506a is on line 526, i.e., in line with feature 505, and horizontal portion 506b is on line 531, i.e., lined up with horizontal section 502b of feature 502.
In the present invention the layout 500 of FIG. 5 is used to produce one or more phase-edge layers to produce thin lines as discussed generally herein. The layout 500 is also used to produce what will be referred to herein as the device feature layer. The device feature layer will contain the features, such as features 501-506 of FIG. 5, and is used to block wanted portions of the phase-edge lines from exposure, while exposing unwanted portions. In the present invention, the photosensitive layer will be exposed to the phase-edge layer or layers, and the device feature layer, to produce the final device layer. In general, the device feature layer of the present invention is similar to prior art device layers wherein a single exposure is used. It should be noted that in the present invention, a single photosensitive layer will be exposed multiple times with multiple masks. However, the order of exposure typically is not important. Therefore, reference to a first mask, second mask, etc., or first exposure, second exposure, etc. is not meant to indicate the order in which the exposure is performed or the mask is used.
Once the features have been placed on the lines as described above, the lines are extracted from the design system's database to produce the phase-edge layer layout 600 shown in FIG. 6. Then, the layout 600 is used to produce a mask such as mask 700 illustrated in FIG. 7. As shown in FIG. 7, each area bounded by the lines is designated as either a 0° region 701 or a 180° region 702. As described earlier, for the purposes of the present invention, the designation of one region as 0° and one region as 180° is arbitrary and may be reversed. As described in relation to FIG. 1, there will be a drop in intensity of radiation transmitted through mask 700 of FIG. 7 at every 0°/180° interface. After exposure to mask 700, a latent image corresponding to the grid shown in FIG. 6 will thus be formed in the photosensitive layer.
The photosensitive layer is additionally exposed to the device feature layer, that is, to a mask having features such as 501-506 of FIG. 5. After exposure to the above described masks, and development, the photosensitive layer will appear as shown in FIG. 8. As shown, the features 801-806 correspond generally to the features 501-506. However, because the width of each feature has been formed by use of phase-edge phase-shifting, it is of very small dimension. For example, the width of the lines of each of the features 801-806 may be well below 0.25μ depending upon the particular lithographic process.
Note that some of the features comprise cross members 825 which result from the fact that a crossing in the lines formed from mask 700 of FIG. 7 is covered by one of the features 501-506. The length of these cross members 825 will depend upon the width of the features 501-506. Typically, for various wiring structures such as interconnects, these cross members 825 will be of no consequence. In some structures, such as gates, it may not be desirable to have the cross members 825. As shown in FIG. 8, portions of the features may be without such cross members 825 by virtue of the placement of the lines. For example, referring back to FIG. 5, the lines 530 and 531 are disposed such that features 503-505 have no cross members 825, and such that features underneath the vertical portion 501a of feature 501,502a of feature 502, and 506a of feature 506 have no cross members. That is, in laying out the circuit, regions can be reserved where gates are to be present such that no crossing lines exist. Even in embodiments where periodic horizontal and vertical lines are used, the spacing of the lines, and the geometry and dimensions of the diffusion regions may be such that no cross members 825 are present on gate portions of the features.
Note that the present invention is not restricted to use of a positive photosensitive layer as described above to form gates, interconnects, or other structures. In addition, the present invention may be utilized with a negative photosensitive layer. For example, exposure to mask 700 of FIG. 7, followed by exposure to mask 500 of FIG. 5, and then development, results in trenches or channels being formed in the photosensitive layer. This may be used as an etch mask to form, for example, channels in an underlying layer, such as a underlying dielectric layer, into which a conductive material may be deposited to form interconnects.
With regard to an embodiment used to form single edge features, one of the regions 701 and 702 of mask 700 of FIG. 7 is opaque, while the other one of the regions 701 and 702 is transmitting, depending upon whether a positive photosensitive layer or a negative photosensitive layer is used, and depending upon which areas it is desired to build sidewall structures upon to form device features.
The present invention may be used to produce a layout to form small dimension openings in a photosensitive layer, which may be used to form, for example, contact or via openings. Referring to FIG. 9, a plurality of contact openings 901 are defined on the intersection of the plurality of vertical lines 920-927, and horizontal lines 930-936. As described earlier, the lines may be pre-defined or may be defined as the contacts are defined. In addition, the lines need not necessarily be periodic and need not necessarily be orthogonal as shown. In the embodiment shown herein, note that the contacts are defined over intersections of the lines. As will be seen, this ensures that the phase-edge layers and device feature layer may automatically be extracted from the database to produce the appropriate masks. Generally, it may be possible to use the same lines as those used for the layer to which contact is being made. Some additional lines may need to be defined in the contact layer to produce intersections at each contact opening, where, for example, a contact overlies a portion of an underlying line not at an intersection. For example, referring back to FIG. 5, if it were desired to contact line 503, it would be necessary to add a line intersecting line 524 at some point along line 524 where feature 503 is present to produce an intersection. Furthermore, the contact layer need not necessarily have all the lines of the underlying layer, as the underlying layer typically has a greater density of features than the contact layer.
After the features 901 have been placed on the lines 920-927, and 930-936, the vertical lines 920-927 are extracted to create mask 1000 of FIG. 10 having alternating 0° regions and 180° regions defined by the lines 920-927. Also, as shown in FIG. 11, the horizontal lines 930-936 are extracted to create a mask 1100, also having alternating regions of 0°, and 180° defined by the lines 930-936.
To create contact openings, a negative photosensitive layer is exposed to mask 1000 at approximately 50% or more of the typical dose needed for a contact opening. Similarly, the photosensitive layer is exposed to mask 1100 at approximately 50% or more of the exposure needed for contact patterning in the lithographic process being used. Typically, one half the dose used in a standard contact opening process - i.e., a single exposure to a mask having features 901, is sufficient to substantially expose open field regions. If desired, more than this amount may be used. Use of approximately one half the dose of the standard contact opening process dose, as opposed to greater dosage, helps prevent overexposure of the contact openings. One of skill in the art may readily determine the appropriate dose to ensure that the horizontal lines, other than at the intersections, are substantially exposed during the exposure to the vertical lines, and vice versa, without overexposing the intersections.
After exposure to the masks 1000 and 1100, portions of the photosensitive layer not under either the vertical or horizontal lines, have received two exposures. Portions of the photosensitive layer under either the vertical or horizontal lines, but not at an intersection thereof, have received a single exposure, which, as described above, is sufficient to substantially expose the photosensitive layer. Therefore, after these exposures, a latent image at each of the intersections is created as shown in FIG. 12. In FIG. 12, each of the latent images 1201 has a dimension of less than 0.25μ in a preferred embodiment. Of course, the dimension will depend upon the lithographic process. In FIG. 12, only some of the latent images 1201 are labeled. However, it will be understood that after exposure to mask 1000 and mask 1100, there will be a latent image at every intersection.
Next, the photosensitive layer is exposed to a mask having the features 901 disposed at those intersections where contact openings are desired. After this exposure and development, contact openings will be present as shown in FIG. 12, as all other regions of the photoresist layer are substantially exposed in one or more of the above-described three exposures. Again, it will be appreciated that the masks 1000, 1100, and the mask having the features 901 may be exposed in any order. As shown in FIG. 13, a plurality of contact openings 1301 are formed in the photosensitive layer in the regions underneath the features 901. Again, only some of the contact openings 1301 are labeled for clarity.
The present invention may be used to form contact or via plugs using positive photoresist. The positive photosensitive layer is exposed to three masks and then developed substantially as described in relation to FIGS. 9-13. In the case of a positive photosensitive layer, the features 1301 of FIG. 13 will now be columns or pillars of resist. For example, FIG. 14A shows a side view of a plurality of pillars 1401. The pillars 1401 are formed on conductive layer 1405 which is deposited on substrate 1400. Following formation of pillars 1401, an etch is performed on layer 1405 during which portions of layer 1405 are masked by the resist pillars 1401. The etch is followed by removal of the photosensitive pillars 1401. The resulting structure is shown in FIG. 14B where plugs 1406 of conductive material have been formed from layer 1405. Next, as shown in FIG. 14C dielectric layer 1410 is deposited on the substrate. Next, a thickness of dielectric layer 1410 is removed to expose the plugs 1406, as shown in FIG. 14D. The layer 1410 after removal of the upper portion is shown as layer 1410a. The process to remove a thickness of layer 1410 to produce layer 1410a exposing the plugs 1406 may be any well known process such as a damascene process.
In the above-described embodiment for forming small openings or resist pillars, two phase-edge layers were used to reduce the dimensioning of the opening or plug. Alternatively, if desired, the phase-edge masking may be performed in a single step with a checkerboard-like structure. However, this embodiment has a disadvantage that cross-like structures will be formed. These cross-like structures will have a larger dimension than the above-described embodiment, wherein the entire photosensitive layer, except at the intersection of the lines, is exposed. FIG. 15 shows intensity profiles (aerial images) of two dark images (e.g., two of the latent images 1201 of FIG. 12, or 1301 of FIG. 13) spaced a distance 0.5μapart. In FIG. 15, a plurality of these aerial images, at several defocus positions from -0.5μ-+0.5μ are superimposed. The drops in intensity 1501 correspond to the above described intersection of the vertical and horizontal phase-edges.
Referring now to FIG. 16, a close up of one of the images 1501 is shown. The conjugate isofocal plane, which is the position on the aerial image where the image size is the same regardless of defocus, is shown at position 1605. The feature size is less than 0.1μ at the conjugate isofocal plane, indicating that sub-quarter micron features with very good process latitude may be formed by the present invention. Referring now to FIG. 17, the modulation transfer function (MTF) of the images is shown. Note that even at defocus of +/±0.5μ, the MTF is greater than 0.8, indicating good contrast. The aerial images of FIGS. 15 and 16, and the MTF's of FIG. 17 were produced using an exposure wavelength of 193 mm, a numerical aperture (NA) of 0.6, and a partial coherence of 0.4. In contrast to the present invention, aerial images for 0.1μ resist pillars using a conventional mask with opaque features to form the resist pillars, show that the MTF for the prior art process is below 0.35 even at best focus.
As described herein, the present invention comprises defining a plurality of lines which, depending upon the features, may be arranged in rows and/or columns. The definition of the lines may be done in a variety of manners. In one embodiment, lines may be pre-defined with respect to the earlier described grid points in relation to which features are typically defined. For example, in one embodiment the lines may be laid out in rows and columns spaced at approximately the minimum pitch. Features can then be placed on these lines as they are encountered by the system. Alternatively, lines can be defined as features are created. In this embodiment, it should be ensured that no two lines are spaced closer than approximately the minimum pitch, although lines may be placed apart greater than the minimum.
In any embodiment, it may desirable to skip definition of lines where no patterns exist. For example, referring back to FIG. 5, lines 522 and 523 may be skipped, assuming there are no features above or below the portion of the layout 500 shown in FIG. 5. More typically, device patterns may contain regions where numerous features are present, and other regions where few features are present. In this case, even if it is not efficient to skip writing lines in small regions such as where lines 522 and 523 are present, it may be advantageous to skip writing lines in other portions of the device layer. In addition, it will be appreciated that devices are often broken down into functional units, and the units may further be broken down into various subunits. Each unit or subunit need not follow the same system of lines. Rather, each unit or subunit can follow its own system as appropriate. Often, various units, or subunits repeat, so that once the lines for such a unit or subunit are defined, the layout can simply be repeated for all the repeating units, subunits, etc. It should be noted that in embodiments where a single system of lines are not used for an entire chip, but rather portions such as the above described units or subunits may have their own system of lines, it may be necessary to further specify that no line is placed closer to the edge of a unit or subunit than approximately half the minimum pitch. Alternatively, when units or subunits are assembled together, the design system can check to ensure no two lines are closer than approximately the minimum pitch, and adjust as necessary. In this way, a line from a particular unit, and another line from an adjacent unit, are no closer together than approximately the minimum pitch.
In the present invention, since all features are disposed on one or more lines which are then extracted to form the phase-edge mask, the layout problem of defining the phase-edge mask for randomly placed features is avoided. It should be noted that the present invention has been shown and described in conjunction with features being placed approximately along the center of the lines. It will be appreciated that in defining the device layer layout, the features may be defined in relation to the lines with an offset, for example. Then, when the various portions are extracted to form masks, the lines and/or the features may be shifted, so that upon exposure the features cover the lines as described herein. The offset need not be the same for every line. Further, it will be appreciated that use of one or more mathematical rules or design constraints for placement of the features as described herein, and use of the rules to extract the phase-edge layer, is within the scope of defining lines and placing features in a known relationship to the lines, even if no actual lines are created in the design system database.
As described above, the lines of the present invention should be spaced no more closely than approximately the minimum allowable pitch, features should be placed no closer than the minimum spacing, and feature size should be no smaller than the minimum dimension. However, since the purpose of the device feature layer in the present invention is merely to block some portions of the phase-edge layer from exposure, causing other portions to be exposed, the minimum pitch, spacing, or dimension for purposes of the present invention may be a smaller than the corresponding minimum for a device layer used alone, and may in essence be dictated by the phase-edge layer lithography. That is, in the prior art, a mask having device features is the sole mask used to define the device features so that the minimum pitch, minimum spacing, and minimum dimension requirements must be adhered to. For example, in the prior art, if features are spaced too closely together, there may be bridging between the features. Typically, this may not be overcome by, for example, increasing the exposure as this may cause other problems, such as blurring of the feature edges or loss of linewidth control. In the present invention, since the phase-shift edges are disposed some distance from the edge of the device layer features, it may be possible to, for example, decrease the pitch and spacing by making some adjustment to the lithographic process, such as increasing the exposure dose, to prevent bridging. For example, referring back to FIG. 5, if line 503 were made to extend such that the end of line 503 were closer to feature 502 than the minimum spacing, it may be possible to prevent bridging by adjusting e.g., the exposure. Because the linewidth of feature 503 is determined by the phase-edge produced from line 524, overexposure to a having feature 503 would have no appreciable affect on the linewidth, although the length may be affected slightly.
Thus, a layout methodology and a method and apparatus for patterning a device layer have been described. Although specific embodiments, including specific equipment, parameters, methods, and materials have been described, various modifications to the disclosed embodiments will be apparent to one of ordinary skill in the art upon reading this disclosure. Therefore, it is to be understood that such embodiments are merely illustrative of and not restrictive on the broad invention and that this invention is not limited to the specific embodiments shown and described.
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text:
August 3, 2015
HOOKS, Texas (AP) - A military depot in Northeast Texas will lay off nearly 370 workers amid the downsizing of U.S. troops in Iraq and Afghanistan.
The Red River Army Depot on Wednesday announced plans for layoffs in February due to completion of work such as military vehicle and rocket system repairs. A news release says changes in troop strength and budget requirements translate to workload reductions and personnel adjustments.
More than 4,000 people work at the Red River Army Depot - making it the largest employer in Bowie County. The complex is located near Hooks, about 15 miles from the Texas border with Arkansas.
The depot has established a transition support center, with assistance from both states, to help laid-off employees.
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text:
Savannah earns its reputation as the epicenter of antebellum grace and Southern charm. Nowhere on earth are there so many delightful, small boutique hotels and interesting bed and breakfast inns, serving up pleasantly surprising menus of manners, gardens, and elaborate furnishings.
Most Savannah hotels are located right in the center of the city on the south banks of the Savannah River, in what is referred to as the Historic District. One after the other, each inn just as beguiling as the next, these beautiful architectural creations lure guests with details that defy description and gardens so luxurious they'll make you blush. Furnishings, linens, and accent pieces will astound you with their beauty and authenticity, whispering back to a more gracious time. There are, of course, modern chain hotels as well, but it would seem almost sinful not to at least explore these grand dames while on vacation in Savannah.
Savannah-area hotels abound at locations near the Hilton Head resort area. While the ride from the airport is a bit farther, the scenery is magnificent and the beaches are both wild and beautiful. As a rule, hotels on the beach are a bit more expensive than those in town, but there are a few exceptions. Overall, for a resort area, hotel rates in both Savannah and Hilton Head are not overly expensive.
While most of the area hotels in the historic district do not have pools, the seashore awaits just a short drive away. Hotels on the beach in Hilton Head almost all offer pools and spas in addition to having the seashore just steps away. Tennis and golf are also big amenities at the resort hotels, and are often made available to those staying in the city of Savannah.


text:
Cisco debuts stadium Wi-Fi system
Cisco has introduced a stadium Wi-Fi system that incorporates a multicast capability. Cisco StadiumVision Mobile gives stadium operators the option of creating channels of additional content, such as a replay channel, a broadcast channel for out-of-town games and feeds from stadium cameras, all accessible through a mobile app.
Cisco contends the multicast Wi-Fi approach increases scalability, previously a problem in high-density environments, the company said, as the potential stress on the network is the same whether one mobile device or tens of thousands are viewing a particular video feed.
The in-venue app is the interface for the delivery of live video and data feeds. Video channels can provide alternate camera views and replays, while the data channel can be used for stats, trivia contests and multi-player games, for example.
Options exist for targeted advertising, sponsorship activations, promotions, branding and more, Cisco said. That includes taking over every user screen at the same moment, with what Cisco refers to as a "Moment of Exclusivity" – displaying a message simultaneously on every screen in the venue (big board, HD displays, and now mobile devices) to "deliver high-impact brand exposure for one specific sponsor."
Stadiums are proving to be ideal sites for publicly available Wi-Fi installations. Comcast has installed a Wi-Fi network at Boston's Fenway Park, fed by a Metro Ethernet network; AT&T has installed Wi-Fi at AT&T Park in San Francisco; and The New England Patriots hired Enterasys Networks to provide Wi-Fi at their stadium.
Cisco said that among the first customers for StadiumVision Mobile will be the Brooklyn Nets (Barclays Center), Real Madrid (Estadio Santiago Bernabéu) and Sporting Kansas City (Sporting Park).


text:
Thursday, October 3, 2013
There was another fire on Front Street this morning. Fortunately, this one was minor.
At about 8:45 a.m. Georgetown firefighters were sent to Old Fish House in the 800 block of Front Street because of a kitchen fire.
Fire Chief Joey Tanner said the fire started in a hood over a stove and spread to a wall. The fire was extinguished by 9 a.m.
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text:
Being evaluated for sleep apnea. American Sleep Apnea Association website. Available at:
http://www.sleepapnea.org/resources/pubs/evaluated.html. Published May 2005. Accessed September 17, 2008.
Getting a diagnosis. American Sleep Apnea Association website. Available at:
http://www.sleepapnea.org/resources/pubs/evaluated.html. Accessed June 3, 2013.
NINDS sleep apnea information page.
National Institute of Neurological Disorders and Stroke website. Available at:
http://www.ninds.nih.gov/disorders/sleep%5Fapnea/sleep%5Fapnea.htm. Updated December 28, 2010. Accessed June 3, 2013.
Obstructive sleep apnea (OSA). EBSCO DynaMed website. Available at:
http://www.ebscohost.com/dynamed/what.php. Updated May 23, 2013. Accessed June 3, 2013.
American Academy of Otolaryngology-Head and Neck Surgery website. Available at:
http://www.entnet.org/HealthInformation/snoring.cfm. Accessed June 3, 2013.
What is sleep apnea? National Heart, Lung, and Blood Institute website. Available at:
Updated July 10, 2012. Accessed June 3, 2013.
This content is reviewed regularly and is updated when new and relevant evidence is made available. This information is neither intended nor implied to be a substitute for professional medical advice. Always seek the advice of your physician or other qualified health provider prior to starting any new treatment or with questions regarding a medical condition.
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Virtue Paintball Destroy Headwraps and headbands give you the look and comfort of a professional paintball player. Choose from a variety of styles and colors to complete your outfit!
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text:
General Guidelines for Managing Sinusitis
Stop Smoking
Smoking increases your risk of sinusitis and probably hampers your ability to heal from the infection. The sooner you stop smoking, the better off you'll be. Talk to your doctor about programs and medications that may help you stop smoking .
Drink More Water
Drinking more water might help keep your nasal secretions thinner, and therefore easier to blow out. However, there is no evidence showing that fluid intake changes the outcome of sinus infections. It is also reasonable to increase the consumption of fluids in hot weather or following intense exercise.
Avoid Flying
If possible, avoid flying when you are congested. Changes in air pressure may make your condition worse.
Revision Information
- Reviewer: David L. Horn, MD, FACP
- Review Date: 09/2014 -
- Update Date: 09/17/2014 -


text:
Softball Sweeps Cazenovia
- Release Date:
- April 3, 2012
- Contact:
- The Office of Sports Information
- (716) 649-7900 ext. 333
box scores will be posted once they are made available
HAMBURG, NY - Hilbert College swept Cazenovia College, 15-7 and 10-0, in softball April 3. The Hawks hit the ball well to open the double header and carried that confidence into the second game to secure the win in the fifth inning.
Natalie Whitman earned her first home run of the season early in the game and Emili Ripley followed suit by sending her ball over the fence to earn her second home run of the year. The most exciting hit of the game was when Halsey Baker's powerful swing connected on the pitch. The softball rocketed over the fence to give the senior her first grand slam of the season. Hilbert continued to run the bags for additional scores and finished the game with 15 runs, their highest run total in 2012.
The Hawks continued to play with confidence and hit well enough early enough to build a 10-0 lead by the middle of the fifth inning. At that point, the game was called based on the run-rule and Hilbert got the win.
Hilbert begins AMCC play again this weekend when they travel to Pittsburgh, PA to face La Roche College at 1pm.
Hilbert College, located in suburban Hamburg, N.Y., south of Buffalo, is a private four-year college founded in 1957 in the Catholic Franciscan tradition. With nearly 1,100 students, Hilbert is a dynamic Western New York college that offers career-focused majors, including one of the top criminal justice programs in the region, and more than 50 minors and concentrations. The college's engaging, student-centered campus community offers numerous leadership, internship, and service learning opportunities from which students launch successful careers while making positive changes in their communities. The Hilbert Blueprint promotes a well-rounded student experience over four years – starting with the Foundations Seminar in the freshman year, followed by Sophomore Service, Junior Symposium, and culminating with the Senior Capstone. Hilbert has expanded its academic offerings with the college's first graduate programs and new Accelerated Degree Programs geared to adult learners.
Upcoming Events
- First Year Student Orientation
- Aug 14, 2015
- Summer Session A2 Ends
- Aug 21, 2015
- First Year Student Orientation
- Aug 28, 2015


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Originally published on Wed November 6, 2013 5:26 am
The CEO of the firm that's about to take over the New York Stock Exchange has criticized alternative market trading. Jeffrey Sprecher said equity markets, including the NYSE, allow sophisticated traders to take advantage of small investors. He added such models are destined to fail and that people outside the markets have a sense things aren't fair.


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Naomi Frances "Vicky" Dehart, 72, died Monday, Feb. 4 at the Hazard ARH medical center.
She was born on Nov. 17, 1940 in Clark County, Ky., to the Late David Hopper and Mable Collway, and was also preceded in death by her mom, Lottie Mae Hopper, and brother JD Hopper.
She is survived by her husband, Delmer Dehart; son Billy Dehart and wife Marie; granddaughter Tracy Holbrook and husband James Ronald; great-grandchildren Jayden, Keira, Chaselyn, and Shylee Holbrook; and a host of other relatives and friends.
Funeral services were held on Thursday, Feb. 7 at the Big Leatherwood Old Regular Baptist Church at Cornettsville with Shane Pippen and Jeff Sloan officiating. Burial was at the Arch Halcomb Cemetery located at Little Leatherwood.


text:
AQUA SPHERE Kids' Vista Jr Goggles - Clear Lens
|Eligible for 20% Off Your Entire Purchase! (see promotion details)
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Young swimmers will love exploring below the surface with these AQUA SPHERE® Vista Jr. youth goggles.
The ultra-durable Plexisol® lenses provide 180-degree panoramic vision and have anti-fog and UV treatments for long-lasting clarity. The Quick-Fit Buckle™ allows for simple adjustments, even while you're wearing them.
Get your new AQUA SPHERE® youth goggles today from Sports Authority.
- Quick-Fit Buckle™ system
- Ultra-durable Plexisol® lenses
- 100% UVA and UVB protection
- 180-degree distortion-free visibility
- Scratch-resistant coating
- Anti-fog coating


text:
Book your room at Steigenberger Frankfurter Hof
Superior RoomMax Occupancy: 2 guests (up to 1 child, 1 infant)
Grand Deluxe Room One Double Bed One Queen BedMax Occupancy: 2 guests (up to 1 child, 1 infant)
Junior SuiteMax Occupancy: 2 guests (up to 1 child, 1 infant)
Executive Suite, 1 King BedMax Occupancy: 2 guests (up to 1 child, 1 infant)
Studio Suite, 1 King BedMax Occupancy: 2 guests (up to 1 child, 1 infant)
Deluxe Double RoomMax Occupancy: 2 guests (up to 1 child, 1 infant)
Get an overview of this hotelFrankfurt luxury property near Frankfurt Opera House
Collect 200 points
Simply enter your Nectar card number when prompted. Your points will be credited 30 days after you return from your trip.*Offers may apply
+VIP Access™ Hotel
We carefully hand-picked this hotel based on its dedication to service and excellent guest reviews.
At VIP Access hotels, our elite customers are invited to enjoy the free room upgrades and other benefits upon availability at check-in.See details
Luxury hotel on the Kaiserplatz in central Frankfurt, less than 500 metres from the Opera House; Alte Oper and Goethehaus are within walking distance. Shopping on the Kaiserstrasse is a few steps away.
Free WiFi
Guests can enjoy the gourmet French inspired cuisine and wine in one of the four restaurants and bars.
Air-conditioned guestrooms feature high ceilings and marble bathrooms; all have cable television and wireless Internet.Information missing or incorrect? Tell us!
Renovations & Closures
- Bar/lounge
Hotel Amenities
Hotel Amenities
Easily reachable by taxi or public transportation from the main train station, this Frankfurt hotel includes a terrace, a fitness center, a piano and a library, and a multilingual staff can organize event catering and provide currency exchange. The hotel has a 24-hour business center, a conference center, 19 large and small meeting rooms totaling 13,730 square feet (1,276 square meters), free WiFi, as well as a computer station; technology support staff and audio-visual equipment are also available. The property also features a 500-square-meter ballroom that can accommodate 10 to 700 people.
An airport shuttle can be arranged per request. The hotel provides secure, garage parking (surcharge); height restrictions may apply. Valet parking is available. Pets and service animals are permitted.
- Fitness facilities
- Total number of rooms - 303
- Number of floors - 6
- Number of buildings/towers - 1
- Conference space size (meters) - 1276
- Number of meeting rooms - 19
- Conference space size (feet) - 13730
- Meeting rooms
- Conference space
- Free newspapers in lobby
- Breakfast available (surcharge)
- Coffee shop or café
- Bar/lounge
- Limo or Town Car service available
- Multilingual staff
- Safe-deposit box at front desk
- 24-hour front desk
- Porter/bellhop
- Express check-out
- Express check-in
- Dry cleaning/laundry service
- Laundry facilities
- Barbecue grill(s)
- Year Built 1876
- Elevator/lift
- Full-service spa
- Free WiFi
- Computer station
- Rooftop terrace
- Designated smoking areas
- Tours/ticket assistance
- Luggage storage
- Library
- Valet parking (surcharge)
- Terrace
- Self parking (surcharge)
- Conference center
- Number of restaurants - 4
- 24-hour business center
- Airport transportation (surcharge)
- Spa services on site
Family Friendly Amenities
- Free Wi-Fi
- Rollaway/extra beds available
- Laundry facilities
- Sofa bed
- Refrigerator
- Cribs/infant beds (complimentary)
Available in all rooms: Free WiFi
Available in some public areas: Free WiFi
Self parking (surcharge), Valet parking (surcharge)
Room Amenities
- Connecting/adjoining rooms available
- Free cribs/infant beds
- Premium TV channels
- Pay movies
- Premium bedding
- Hypo-allergenic bedding available
- Separate sitting area
- Room service (24 hours)
- Climate control
- Blackout drapes/curtains
- Air conditioning
- Ceiling fan
- Phone
- Refrigerator
- Minibar
- Daily housekeeping
- Turndown service
- Designer toiletries
- Private bathroom
- Bathrobes
- Hair dryer
- Slippers
- Shower/tub combination
- Bidet
- Cable TV service
- Iron/ironing board
- Desk
- Sofa bed
- Rollaway/extra beds available
- Free WiFi
- Free newspaper
- In-room safe
Where to Eat
Restaurant Francais - Michelin starred restaurant serving classic French dishes in elegant surroundings with crystal chandeliers, tapestries and historic murals. Open for dinner Monday to Friday. Closed at the weekend.
Hofgarten - Breakfast is served each morning from 6:30 AM to 10:30 AM in a bright restaurant with views of the city. Sunday brunch is available.
Oscar's - Casual café bar serving light snacks all day from an international menu. Outside dining on the street terrace in the summertime.
Iroha - Japanese sushi bar open for lunch and dinner Monday to Saturday. Closed Sundays.
Autorenbar Lounge - Lounge bar and winter garden serving late breakfasts, traditional afternoon teas, and drinks throughout the day until late. Live piano music.
Cigarrum - Offers selected cigars, and a variety of rums and wines.
Nearby Things to Do
The recreational activities listed below are available either on site or near the hotel; fees may apply.
- Golfing nearby
Spa Services
- Hot stone massage
- Deep tissue massage
- Steam room in spa
- Thai massage
- Detoxification wrap
- Manicures and pedicures
- Aromatherapy treatments
- Thalassotherapy treatments
- Hydrotherapy treatments
- Sauna in spa
- Massages
- Body treatments
- Facial treatments
Hotel Policies
Minimum check-in age is 18
Check-in time starts at 2 PM
Check-out time is Noon
Payment types
Pets allowed
You need to know
Extra-person charges may apply and vary depending on hotel policy.
Government-issued photo identification and a credit card or cash deposit are required at check-in for incidental charges.
Special requests are subject to availability upon check-in and may incur additional charges. Special requests cannot be guaranteed.
Parking height restrictions apply
- Fee for full breakfast: EUR 35 per person (approximately)
- Self parking fee: EUR 20 per day
- Pet fee: EUR 60 per pet, per night
- Rollaway beds are available for an additional fee
We should mention
This property offers transfers from the airport (surcharges may apply). Guests must contact the property with arrival details before travel, using the contact information on the booking confirmation. Children 12 years old and younger stay free when occupying the parent or guardian's room, using existing bedding. The property has connecting/adjoining rooms, which are subject to availability and can be requested by contacting the property using the number on the booking confirmation. Guests can arrange to bring pets by contacting the property directly, using the contact information on the booking confirmation (surcharges apply and can be found in the Fees section).
National Rating
Hotelstars Union assigns an official star rating for properties in Germany. This property is rated 5 star Superior and is displayed on this page as 5.0 stars.


text:
The first annual Zia Summit offers a world-class lineup of presenters covering cutting edge topics from Enterprise Open Source, to Managed Cloud deployments, to next generation Enterprise Mobile CMS solutions. We are thrilled to now announce the following Keynote presenters:
John Newton – CTO and Chairman, Alfresco Software
Ike Kavas – CTO and Co-Founder, Ephesoft
In addition, we will have partner presentations on Liferay, Mulesoft, and WeWebU – and Customer case studies featuring Zia delivered solutions. Plus, our top practice and technical leaders will provide information and interactive demonstrations on new Zia products, services, and solutions.
Zia Consulting is a leading provider of enterprise business solutions for content management from paper to mobile. Zia Consulting's Fresh Products and Mobile Applications for ECM enables users to create, store, share, and find content across the enterprise and on the go. Zia Consulting has worked with both the public and private sector to provide end to end business solutions for Procurement, Sales Automation, Contract and Records Management, eDiscovery, Knowledge and Business Process Management, Project and Expense Management, to name a few. Zia Consulting, content anywhere, solutions here.


text:
TV's classic Bionic Man returns in new comic bookWritten by Jim Beard | | email@example.com
The final episode of TV's The Six Million Dollar Man aired in 1978 after five seasons of bionic action. Now, Dynamite Comics is not only reviving the property in a new comic book, but also continuing right where the popular TV series left off. The Six Million Dollar Man: Season Six #1 will debut next month in comic shops; better, stronger, faster.
John S. Drew, host of Cyborgs: A Bionic Podcast at www.abionicpodcast.com, seems excited by the announcement, but also a bit wary of what it might bring. "I love the idea of a Season Six comic book, personally," he says. "I wonder if it's going to work though for a modern audience of readers in general. In order for it to work with the fans, there has to be a respect for the fact that [in the comic it] will be 1979, not 2014. While the government may have technological advances we are not aware of, it can't be too obvious in the story telling or it will kill a lot of the charm of the stories from that time period."
The new title boasts likenesses of the original show's cast, including Lee Majors as Steve Austin, and touchstones like Austin's boss Oscar Goldman and OSI, the government agency they work for. Even better for grown-up children of the 1970s, though, is the news that the comic will also bring one of the Six Million Dollar Man toy concepts into the storyline: the chameleonic Maskatron. Again, Drew's glad for the inclusion, but hopes that the book's creators know their SMDM history. "Maskatron's origins stem from the first season episode 'Day of the Robot'," he notes. "If they remember that, it will work fine and may draw in more readers."
Overall, Drew sees something special happening with the property, which celebrates its 40th anniversary this year. "There is definitely a renaissance going on," he says. "I think it has to do with the fact that out of all the elements of 1970s culture to get nostalgic about, Steve Austin is the kind of hero who never compromises on what it means to be a hero. He stands for what he believes in and he doesn't put up smoke screens to be something he isn't. We need that kind of a hero today when our TV, movie, and comic books are filled with dark, brooding characters."
Tags: Bionic Podcast, Dynamite Comics, Lee Majors, Maskatron, Oscar Goldman, OSI, Six Million Dollar Man, Steve Austin


text: Prev | Next Purchase this photo Lori Wolfe/The Herald-Dispatch Masons work on the exterior of the gymnasium as construction continues on the new recreation center Monday, Sept. 29, 2008, at Marshall University. Gallery: MU Recreation Center Construction Sep. 29, 2008 @ 03:40 PM LORI WOLFE Construction continues Monday, Sept. 29, 2008, on the recreation center at Marshall University. ()


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im a lover of the adidas boost technology, this is my 3rd pair & they haven't disappointed. I run most days & wear these trainers to do so, I can't wear them for fitness classes that I teach as not enough support for movement in different directions but there made for running so that's what they're best suited for. The only down side is possibly the "sock" style, I don't find that this suits & fits every foot properly. The look & design is fabulous, I ordered the black ones & they look amazing. ... read more
I am so happy with this latest generation! I have several pairs of Adidas Boosts but my favorite has always been the first generation until these came out (The Energy Boosts 2 never felt as cushiony or comfortable to me). I had to splurge on the pre-launch and I'm so glad I did! I couldn't imagine this shoe getting any better from the first generation but the Supers have blown them out of the water as far as cushion and comfort goes - for me anyway. Thank you Adidas! I'm sure I will be buying more once they are on the market again. ... read more
These shoes are absolutely fantastic and better than anything I have worn previously. I was slightly worried about the size and as has been previously stated they are slightly (and only very slightly) narrow. The thing is that it doesn't really matter because of the flexibility of the top part of the shoe. It's like wearing a really flexible sock and it moulds to the shape of your foot. I trialled them on a 7 mile run and the cherry on an already delicious cake is the sole. They are springy and bouncy and they provide strength on the hills and comfort on the flats. I cannot recommend them enough! ... read more
This is my 4th pair of boost sneakers. I have worn out 2 pairs of Energy Boosts( 1 and 2) and have one in my closet, still in the box. I bought the Ultras when they were offered at introduction a couple of weeks ago. I have worn them to work out in and run in at the gym. The extra "boost" is nice, but the overall shoe is somewhat larger than the Energy Boost 1 and 2. I like the original fit better. Glad I have an new pair of the "old" design in my closet! I hope Adidas brings back the Boost 2's in more colors and sizes. ... read more
I tried these out in a test run . I normally wear a size 8.5 in the adios boost. So I picked out and 8.5. They were EXTREMELY comfy when I first put them on. The beginning of the run was good but the shoes felt loose in the front. Halfway through the run my mid foot started to hurt. I think maybe it's just adjusting to the shoe though because it didn't hurt afterwards. When I got back to the store I tried on size 8 thinking they might fit nicer but they were sooooo narrow that it hurt just standing there. I love the shoe but don't think it fits quite right. If there was a size 8 1/4 it would be perfect! Maybe I'll try men's sizes to get some width. ... read more
I have been waiting for these running shoes and they are worth the wait. I love the Adistar shoe and the Boost energy heel is amazing. I am used to Adidas running shoes so I am accustomed to their fit. I do not find them to be shoes that run small or a tight. These are phenomenal shoes that help with my slight pronating issue and very high arch. The Adistar shoes are good, sturdy light weight shoes. I have to agree that the black and bright pink look a bit "young" for my age....but I could learn to live with the colour. Excellent shoe! ... read more
I love the feel of the upper, so soft and comfortable like a slipper. The cushioning is great as well. I definitely feel more than the Energy Boost. My only disappointment ( as mentioned by others) is that the sole shows wear early. I have about 30 miles on mine and already some of the nubs have worn down. For a running shoe in this price range I would not have expected this. The cushioning many last 100s of miles but I doubt the sole will. ... read more
I am a retired semi elite 10km runner (but I still run seriously without racing). I've been running in saucony guide and their predecessors for twenty years. They recently changed it so majorly I can't wear them anymore. I've been struggling ever since to find "my" shoe. I've tried all sorts of models of asics, saucony, Nike, brooks, etc., and none of them were right. I finally tried Adidas boost and was pleasantly surprised at the cushioning and especially their durability. I later bought a pair of Adistar boost and their superiority was apparent immediately. They offer far more cushioning, especially in the heel, than almost all the other brands I've tried (and more than the regular boost), a necessity for the mountainous terrain I run on. Yet the Adistar achieves this without adding weight or compromising durability, the two problems often associated with extra heel cushioning. The divided heel section is brilliant, offering superior cushioning during the initial heel strike. It also provides the smoothest heel to forefoot transition of any shoe I've run in for the last twenty years. This makes it a quick shoe. The easy transition also means it limits runners fatigue, as you're not labouring through each stride but transitioning quickly. You can run a lot further in them for the same amount of every expenditure. Another awesome feature is the continental rubber on the outsole. These shoes last a long time in both the outer and midsole. They outlast other running shoes by an extra 25-50% distance. This makes them well worth the price. The only thing I wish was different was more traction. Half of what I run are mountain trails, and these are really designed for road use only. ... read more
These are seriously the most AMAZING shoes to ever grace my feet. I was having some pretty bad knee pain when I was running, so I went to a specialty running store and got a gait analysis done (which I highly recommend and is usually free), and after trying on many other shoes, I was amazed when I put these on. They are light, breathe extremely well, provide awesome support while maintaining good flexibility, and they come in more neutral colors than some of the more ostentatious colors by other brands. I can't say enough about them! The price can be a little shocking, but the guy at the running store told me that because of their high quality build, they last for 500-600 miles per pair, instead of the usual 300-400 in other shoes. They are worth every penny. My husband and I now both own a pair, and they have been great to us for over 6 months now. ... read more
I have been a fan of Boost since the very first pairs were launched. I heard about them on Marathon Talk podcast and Haile was promoting them. I have since purchased in excess of 10 pairs and have converted 5 people to wearing them. The Ultra Boost are the best yet! They combine the best features of the first Boost and upped their game. The wider toe box and light weight upper plus the extra Boosting is th reason I'll be wearing these at Boston. ... read more
I think these shoes are amazingly comfortable, light weight, and flexible. Loved the colors and the material. If I didn't know better, I would have kept them... But over the years, I have realized that I really need better arch support for long days on my feet, or for high impact workouts. I have chosen to return these ONLY because of my dumb high arches. I decided to purchase a second pair of the Supernova Sequence Boost 7 shoes instead. They feels amazing on my arches, and I seriously feel like I jump higher in them! LOL ... read more
I just wore my new Ultra Boost shoes in a half marathon, and I didn't even have time to break them in properly. I always have trouble with the bottoms of my feet burning on long runs, and they still did, but the other issues I had been having (shoes rubbing little toes, tongue of shoe rubbing top of foot, Achilles tendonitis etc) all were alleviated by the Ultra Boost. My heel and ankle felt much better and didn't bother me during the race. ... read more
I love everything about this shoe related to performance. Excellent, really. I have already ordered a second pair. Ultra Boost compared to my Energy 2.0 ATRs has put a "spring" in my run that I didn't expect. The sock style fit threw me off at first and the fit isn't perfect. It is a little large, yet as others are reporting I agree with being narrow. My only real complaint is the wear on the bottom of the sole is heavy in such a short time. I had read others with the mens had this issue so I was paying attention more than I have with other shoes. Sure enough after my third use, they were worn down greatly. I could pull out my 2.0's and compare after 4 months of wear to the Ultra Boost only three times and the Ultra Boost were worn out more. I love the shoe and what it does for performance and it is hands down the best shoe I have ever owned, but it is going to be pretty expensive keeping these stocked in my closet if I have to keep replacing much more often than normal use. Adidas please fix the sole! You do it so well with the Energy 2.0 ATR! Combine the two and I will be a customer for life. ... read more
I've had the original Adidas boosts before and it was time for a new pair so I thorght I'd go for the Ultra Boosts, I'm not in no way disappointed, the fit is amazing and with not having a tongue they literally fit like a pair of socks!! I have to wear orthotics in my running shoes and even with them in the shoes they still fit great!. Overall I'm very happy with them!! ... read more
I have been eagerly waiting for them to arrive to Cyprus. I bought them a week ago and have performed 3 runs so far about 10km each. I have an issue with my feet , they tend to give me sharp burning pains when the shoes are not right. I experienced this pain in my first run but I think it was only because I was not used to them. The boost is unbelievable, I have improved my time and I cant wait for the Limassol marathon end of March!! Love them!!!! ... read more


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According to reports provided by the Aiken Department of Public Safety:
A 29-year-old Aiken man was detained for DUI on Saturday after he was pulled over on Whiskey Road for drifting in his lane of travel. The man smelled strongly of alcohol and failed multiple field sobriety tests. He refused a breath test.
A burglary was reported on Wednesday at a home on Shady Lane. The owner reported a trunk of personal documents and antiques and a television converter box missing.
A vehicle was reported stolen Wednesday from Linden Street.
According to reports provided by the Aiken County Sheriffs Office:
A 59-year-old Graniteville man who reported trespassing on Wednesday believes an unknown person has been sleeping in the shed behind his home on Glass House Road. The homeowner said he found a chair wrapped in insulation and an empty beer can in the shed.
A Beech Island woman reported vandalism on Wednesday after finding that someone scratched obscenities into the hood and side of her vehicle on Atomic Road.
An Aiken man reported a bicycle and an air conditioner unit missing from his home on Mistyland Loop on Wednesday.
A 51-year-old North Augusta woman reported fraud on Wednesday after learning that her Social Security check never arrived in the mail but had been cashed in Mississippi.
A burglary was reported on Mark Anthony Drive in Aiken on Wednesday. Electronics were reported stolen.
An additional burglary was reported on Reynolds Pond Road in Aiken on Wednesday. Money and a wallet were reported missing.
A vehicle was reported stolen from Townsend Street in Warrenville on Wednesday.
A vehicle break-in was reported on Dunbar Street in Warrenville on Wednesday. The door was left unlocked.
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Thursday, June 6, 2013
If what Charlie Patterson observed over spring football practice last month is any indication, the Hanahan Hawks could be salty on defense this upcoming fall.
"We feel pretty good about the guys we've got (on defense)," Patterson said. "I'd say, without question, this is the best defense we've had since I've been here. We've got a lot of guys with experience. We've got a lot of guys that can run. We've got a lot of guys that will hit you."
The Hawks bring back 10 starters on that side of the ball and have a number of others that got substantial experience in 2012.
Depth is an asset for sure as the Hawks aim for big things. Last season, they finished 11-2 and advanced to the third round of the Class AAA playoffs.
The offense is a lot less seasoned and that showed up over spring practice. Missteps and mental blunders were quickly exposed.
"With all those new guys over there, any mistake they make it shows up," Patterson said. "It's not like we can get a false sense of being good (on offense) because they're going up against good people."
Defensive linemen Vontrell Grant, Jacob Garibay, Corbin Heyward and Dominique Lucas combine with linebacker corps Lyndon Young, Ronald England, Avery Drake and Marquise Mack to form a stout front eight for the Hawks. Drake is the lone non-returning starter.
Free safety Marlon Washington leads the group coming back in the secondary. Andrew Conyers and Deandre Thompson are the corners.
Kyle Spigner will be back as kicker/punter.
On offense, the Hawks return offensive linemen Jacob Billings and Anthony Tolliver. They are returning starters along with wide receiver Terrell Green.
Quarterback Mason Schwerzler takes over for Anthony Smalls, a North-South selection last season.
Quan Wade and Haven Horlback give Hanahan a 1-2 punch at running back.
Along with Green, the Hawks are athletic at wide receiver, Patterson said. Sam Denmark and Kahlim Denmark are outside with Green, while Chase Pfaff, Saaehim Brooks and Greg Casselman. Corbin Heyward and Chase Patterson are the tight ends.
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Defense to continue in Arizona boyfriend slaying
PHOENIX — Defense attorneys for a woman charged with killing her lover are
set to continue their case in a Phoenix courtroom.
Jodi Arias is accused of fatally shooting and stabbing Travis Alexander in June
2008 at his Mesa home.
The 32-year-old could become just the fourth woman on Arizona's death row if
Defense attorneys have been trying to portray the victim as a liar and cheat
who repeatedly deceived his friends and family, claiming he was a devout Mormon
saving himself for marriage when he was, in fact, sexually involved with
numerous women, including Arias.
Testimony continues Monday.
Prosecutors claim Arias killed Alexander in a jealous rage. She said it was
Alexander was stabbed and slashed 27 times, shot in the forehead and had his
throat slit.


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What is Chemotherapy? [1]
This is the first article in a three-part series, and it provides an overview of the basics of chemotherapy. The other articles in this series address what to expect when receiving chemotherapy [2] and the side effects of treatment [3].
Chemotherapy is the use of drugs to kill cancer cells. However, when most people use the word chemotherapy they are referring specifically to drug treatments for cancer that destroy cancer cells by stopping their ability to grow and divide. Your doctor may call this standard chemotherapy, traditional chemotherapy, or cytotoxic chemotherapy. These powerful medications circulate in the bloodstream and directly damage the cells that are actively growing. Because cancer cells generally grow and divide faster than normal cells, they are more susceptible to the action of these drugs. However, damage to healthy cells is unavoidable, and this damage accounts for the side effects linked to these drugs.
Several other types of drugs are also used to treat cancer, including hormone therapy and various types of "targeted" therapy. In fact, many of the drugs recently approved for use in cancer treatment fall into these categories. Because these treatments are much more specific to cancer cells, there is usually less damage to normal cells, leading to different side effects. Learn more about targeted therapy [4] and immunotherapy [5].
Uses of traditional chemotherapy
Chemotherapy is often used as an adjuvant treatment (treatment given after surgery or radiation therapy) to kill any cancer cells that remain. It may also be used as neoadjuvant therapy (treatment given before surgery or radiation therapy to shrink tumors). For cancers of the blood or lymph system, such as leukemia and lymphoma, chemotherapy may be the only treatment given. In addition, chemotherapy is used to treat recurrent cancer (cancer that comes back after treatment) or metastatic cancer (cancer that has spread to other parts of the body).
Goals of chemotherapy
The goals of treatment with chemotherapy depend on the type of cancer and how much it has spread. In some situations, the primary goal of chemotherapy is to eliminate cancer cells and prevent recurrence. If it is not possible to eliminate the cancer, chemotherapy may be used to control the cancer by slowing its growth and/or to reduce symptoms caused by the cancer (called palliative therapy). Learn more about palliative care [6].
The chemotherapy treatment plan
More than 100 drugs are available to treat cancer. Often, medical oncologists, doctors who specialize in treating cancer with medication, will combine drugs to more effectively treat a patient's cancer. The drug or combination of drugs—as well as the dose and treatment schedule—that the doctor recommends depends on many factors, including the type and stage of cancer (describes the size and location of the tumor and whether it has spread); the patient's overall health, age, and ability to cope with certain side effects; the presence of other medical conditions [7]; and previous cancer treatments.
Depending on the type of chemotherapy recommended, some people may receive treatments in their doctor's office, at an outpatient clinic, or at the hospital, while others may take the chemotherapy at home. Some chemotherapy regimens (schedules) consist of a specific number of cycles given over a specific period of time, while others are given for as long as they are effective against the cancer.
Many of the traditional chemotherapy drugs cannot be given every day without causing serious side effects. As a result, they are usually given intermittently, with periods of treatment followed by periods of recovery. This allows healthy (noncancerous) cells time to heal. For example, a patient may receive one week of treatment followed by three weeks of recovery (one cycle). Several of these cycles complete a course of chemotherapy, which generally lasts three months or longer. For some cancers, it may be beneficial to use a dose-dense schedule, meaning there is less recovery time between treatment cycles. Although this can improve the effectiveness of the chemotherapy for some types of cancer, it also increases the risk of side effects. Talk with your doctor about the schedule that will work best for you.
Ways of receiving chemotherapy
Intravenously (IV). The medication goes directly into a vein. Many of the traditional chemotherapy drugs are given by this method. A dose of IV chemotherapy usually lasts a few minutes to a few hours; however, a few drugs are more effective when given at a slow continuous rate for a few days or weeks at a time.
Orally. Some of the traditional chemotherapy drugs can be taken by mouth, meaning they are swallowed as a pill, capsule, or liquid. This is becoming a much more common method of administration, particularly with newer targeted therapies.
As an injection. The medicine is given as a shot to a muscle or to the fatty part of the arm, leg, or abdomen.
Intra-arterially (IA). The medicine goes directly into the artery that supplies blood to the cancer.
Intraperitoneally. The medicine goes directly into the abdomen or peritoneal cavity (the part of the body that contains the intestines, liver, stomach, and—in women—ovaries).
Topically. The medicine is applied as a cream and rubbed into the skin.
Other types of drug treatment for cancer
Traditional chemotherapy drugs remain an important part of treatment for most types of cancer. However, many newer cancer drugs target processes that are specific to cancer cells but not normal cells, and therefore have different side effects. They are sometimes used alone but are usually given in combination with traditional chemotherapy.
Hormone therapy. These treatments change the amount of hormones (natural chemicals that circulate in the bloodstream and regulate the activity of certain cells or organs) in the body, which helps because several types of cancer—including some breast [8] and prostate [9] cancers—can only grow and spread when certain hormones are present.
Targeted therapy. These treatments target specific genes, proteins, or the tissue environment that contributes to cancer growth and survival. As a result, this type of treatment blocks the growth and spread of cancer cells while limiting damage to normal cells.
Immunotherapy. This type of treatment is designed to boost the body's natural defenses to fight the cancer. It uses materials made either by the body or in a laboratory to bolster, target, or restore immune system function.
More Information
ASCO Answers Fact Sheet : Chemotherapy (PDF) [10]
Types of Treatment [11]
Additional Resources
National Cancer Institute: Questions and Answers About Chemotherapy [12]


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Small Wonders is a full-time daycare in Minden, Nevada, providing care for children 0-6 years of age. We offer extra-care for children 6 to 11 years of age for those needing before and after school care. We will provide their morning snack, lunch and afternoon snack. Curriculum, learning activities, centers and art to enhance their individual developmental growth physically, socially and cognitively will be part of our daily routine. All activities will be developmentally appropriate for each child. Our goal is to create a comfortable, safe, and fun environment in which your child can thrive. Our center is willing to accommodate each child based on their needs. Please do not hesitate in letting us know if your child needs extra attention in any areas pertaining to his daily life and general health.
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