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I purchased Hershey's chocolate chips and modified the recipe on the back of the package because I wanted to try to create a different twist to the recipe using different ingredients. This instructable will share my experience modifying their recipe and some experiences I had while doing just that.
Let us get started!
Step 1: Ingredients and Utensils
2 1/4 Cups all purpose flour
1/4 Cup Fine Almond flour
1 teaspoon Kosher salt plus a little extra to sprinkle over the top of the cookies
3/4 cup softened butter ( imported butter is superior for baking because of the flavor and flakier texture. I could not find any here without driving an hour.) I have heard Trader Joe's sells good butter. Look for imported butter in the frozen food section of a store.
1/4 Cup Cream cheese
1/2 Cup Organic pure cane sugar
1 Cup Brown sugar organic would be even better
1 and 1/4 teaspoon Pure Vanilla Extract ( this makes a big difference in the flavor of the cookie dough.)
2 Large eggs( room temperature ) (farm fresh eggs are superior )
5 Squares of Ghirardelli Dark
3/4 Package Hersey's Chocolate chips
Pam or parchment paper
Notes: these cookies are chewy. If you prefer a crisp cookie omit the brown sugar and use regular sugar. Because this recipe was altered from the original recipe I suggest baking two cookies to see how the dough will work for you. Slowly add more flour to the mixture a couple of tablespoons at a time. You need to add enough flour that the cookie mixture will be more like a bread dough (just not quite as dry as bread dough. I hope I explained that well enough.
Step 2: Measure Ingredients
Step 3: Cream Together
Butter, cane sugar, brown sugar, cream cheese, and vanilla.
Add eggs and mix until creamy.
Step 4: Mix Dry Ingredients
All purpose flour, almond flour,baking soda,and salt
Step 5: Add Flour To Sugar Mixture
Step 6: Add Chocolate Chips and Chirardelli
Step 7: Refrigerate
Step 8: Drop Dough Onto Cookie Sheet
Oil the cookie sheet and drop the cookie dough onto the sheet at least 2 inches apart.
Bake approximately 10-12 minutes or until the edges begin to brown. Careful not to over bake them as they will
continue to cook when you remove them from the oven.
Step 9: Modifications To Recipe
When I made the batter I kind of thought it was too much like cake batter, but decided to bake a small batch anyway.
After seeing the results I decided to make 2 cookies by adding 1 1/2 teaspoons of regular flour to the mixture. I baked the two and they turned out perfect. I then added 1/4 cup of regular flour to the rest of the batter and it was the perfect solution. Using different flours can change the texture of the batter. I suggest when you modify a recipe; bake a couple of cookies at a time to see how well they bake. I decided to use regular flour to the mixture because that is what the original recipe called for. Almond flour is not a true flour but rather a nut flour which is much courser than regular all purpose flour. That is why I chose to add 1/4th cup to the original recipe reducing the regular flour by 1/4th cup.
I changed the measurements to the ingredients page and wanted to mention altitude can be a factor in recipes. If your first 2 samples of using 2 1/4 cups of all purpose flour and 1/4 cup of almond flour does not bake up nicely; then slowly add a couple of tablespoons of regular flour at a time and baking 2 cookies at a time until you get the desired results. I say this because I had already baked 11 cookies before adding more flour.
Step 10: Sunshiine's Final Thoughts
All of us liked this recipe. It was a chewy chocolatey cookie. I enjoyed tweaking an original recipe and the experience of correcting the batter to achieve a great tasting cookie! I hope you like this recipe as much as we did.
I wish to thank Instructables, our sponsors, contributors, and all my visitors for making this a great place to share. Thanks for stopping by and do have a safe and happy day!
Wow, these look good! :D
Aw thanks nerfrockerteer, they were very good. Thanks for checking them out and as always have a super day.
If I could eat one thing right now after a heavy Indian Dinner, this would be it :). I bet it is so yummmy :)
+1 haha
More in the oven after I post this!
Haha, I wish I lived near the Land of Enchantment! :D
You are close enough! Right out of the oven! They are better after 24 hours as you can see the difference! Enjoy!
Wow! They are awesome, the chocolate chips melted look so yummy! :D
*stomach rumbles*
Thanks for the (cyber) cookie sunshiine! :-)
They were the best after 24 hours but it is hard to wait to bake them. Making 2 batches is the best way then you get nice fluffy ones that melt in your mouth! Glad you liked the cyber cookie.
Yeah, I might make these sometime! And I'll be sure to post a picture when I do! (favorited)
I hope you do! Thanks!
Awesome, I hope you cleaned your monitor first. I will be experimenting with this recipe again and have some ideas! Stay tuned!
Ha ha :)
Well i dont know about the cookies ( not allowed to eat eggs :( They look delicious though ) !!
But i loved that milk Mug's design !!! :P
Thanks . . . i guess I should modify this recipe so you can try them! The mug belongs to my daughter whom I am visiting. My hubby wanted me to bring it home after seeing the picture but I told him our daughter probably would not part with it. I thought it was the perfect mug for these cookies. thanks so much for commenting and I hope you find you a perfect mug!
& mission find that kind of mug has begun, will let you know if any success :P !!!
I will be playing around with it again, I will probably work on it more when I get back home. Are eggs the only thing you can't eat from this recipe? Thanks for sharing!
I think I would have eaten the cookie dough before it got to cookies. LOL!
I actually did that and it was very good. I did not eat a lot because of the raw egg, I am not that brave. Thanks for sharing and I hope you night shines!
The purpose was to experiment using that flour because I had not used it before. I wanted to create a nutty flavor without adding chopped nuts. We did not notice the nutty flavor but I have used a small amount of coconut flour in a recipe and it was perfect for the recipe. The next time I will increase the amount of almond flour and reduce the regular flour and try to alter the recipe so I won't need to add regular flour. Unique flours are tricky to use when altering recipes or at least that has been my experience. I am learning along the way. Thanks for commenting and do have a great day!
Awesome (as always) sunshiine! Keep it up :-)
Thanks hunter! Have a very w=sweet day!
No problem sunshiine and thanks so much - you are a very kind hearted person :-)
: )
yummy! It is always good to see you swing by with your kitty! Thanks so much for stopping by!

subset: commoncrawl


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38+ weeks and DH and I are still DTD..who else is still trucking along?!?
Who's still DTD?
Posted 12/01/2012
Posted 12/01/2012
40 weeks on Monday and stiiiiill going at it lol my drive is extremely high.
Posted 12/01/2012
Still trucking. Gonna spice it up next week. He may get lucky twice! :0)
Posted 12/01/2012
37 weeks tomorrow and we do it just about every night. Not really trying to induce but trying to get it while we can ;)
Finnegan Demetri 10/2/14
Sebastian Silas 1/2/13
Finnegan Demetri 10/2/14
Posted 12/02/2012
We are!! Lol and it's better everytime lol don't know where this came from all of a sudden
Married 9/18/2010
First time parents to the love our lives, our beautiful baby boy born DEC 14 2012 @ 9:18pm!!
Posted 12/02/2012
We are!
Posted 12/02/2012
36wks and still get it twice a day to get things going. Honestly its just for fun but if it does double duty it can't hurt right lmbo!
Posted 12/02/2012
I've been on pelvic rest since 13 weeks and finally got my cerclage out on Wednesday. We are only just BEGINNING to dtd LOL! I'm getting as much as I can before this LO arrives haha!!
Mommy to three beautiful girls... An ^angel^, a princess, and one due in December
Posted 12/02/2012
We have been here and there... Last night we did and I am hoping to again tonight to move things along.
Chelsea (28) & Savino (32)
MC 9/03, Gabriel Diaz 11/04, MC 4/07, Elliana Elizabeth 09/09... and making his debut 12/12 Cruz Edward!!
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Kansas Has Elite 8 Gift-Wrapped, Will Need to Keep Focus Early On
After just one day of games — sorry, I refuse to count the play-ins — the 2011 NCAA Tournament has already featured a ton of excitement. The coverage has been brilliant, there have been games decided on last-second lay-ups, another decided a last-second three-pointer, and upsets that were nearly impossible to forecast. Despite having not…Read More


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ANNUAL REPORT 2011/12 DEPARTMENT HIGHER EDUCATION AND TRAINING Presentation to the Portfolio Committee on Higher Education and Training 16 October 2012 Presentation Outline • Background Information • Performance on Predetermined Objectives • Financial Statements • Auditor-General Report 2 Background Information • The 2011/12 Annual Report is the second report post the split of the Department of Education • The Annual Report includes the following information: - General information - Information on predetermined objectives - Annual Financial Statements - Human Resources Management 3 Background Information • National Skills Fund: Performance information and annual financial statements is incorporated • Department of Education: The Department is still listed in Schedule 1 of the Public Service Act as a functional Department. All outstanding balances have been closed by 31 March 2012 and balances that could not be cleared were transferred to the Departments of Basic Education as well as Higher Education and Training • Predetermined objectives: - Key achievements - Status of targets - Challenges experienced - Measures put in place 4 Programme 1: Administration Purpose: To conduct the overall management of the Department and provide centralised support services Key Achievements: • The focus for 2011/12 was to build on the work that commenced during 2010/11 and put the necessary administrative systems, policies and procedures into place, as well as to provide core capacity for the smooth running of the department • 133 Appointments were made 5 Programme 1: Administration • 847 Funded posts of which 843 are filled • Staff turnover has been reduced from 12% to 7.6% • A number of policies were developed and approved in Information Communication Technology, Human Resources and Supply Chain Management (3, 16 and 8 respectively) • Call centre has continued to provide a meaningful service to citizens by responding to 95% of the Presidential Hotline queries 6 Programme 1: Administration • Macro-organisational structure approved and consulted with MPSA • Human Resource and Employment Equity Plans approved • 27 Posts for regional offices created and pilot started in KwaZulu-Natal and Eastern Cape Challenges: • ICT services – LAN Desktop support has been slow in addressing user calls • Training levels of the security staff needs to be improved 7 Programme 1: Administration • Lack of modern call centre technology and inadequate facilities for call centre operators • Procurement of new offices did not materialise • No risk management capacity Mitigation: • Appoint an external service provider for LAN and end- to-end user desktop support • Increased capacity in security advisory services and provide training • Develop a new integrated system for the Call Centre • Acquisition of land for office construction • Contract appointment for risk management 8 Programme 2: Human Resource Development, Planning and Monitoring Coordination Purpose: To provide strategic direction in the development, implementation and monitoring of the Department policies. Coordinate activities in relation to the HRDS for South Africa Budget sub-programmes: • Academic Planning and Management Support • Human Resource Development, Strategic Planning and Coordination • Planning, Information, Monitoring and Evaluation Coordination • International Relations • Legal and Legislative Services • Social Inclusion in Education 9 Programme 2: Human Resource Development, Planning and Monitoring Coordination Key Achievements: • Work on the integrated information system continued and three integrated strategic information systems, namely Higher Education and Training Management Information System, Labour Market Intelligence System (LMIS) and Career Advice System are being built • The Information Framework and Career Advice Services Framework were developed • Education Policy of 2004 was updated • Partnership with HSRC to conduct research for LMIS • UNESCO data mission hosted and data plan for SA developed 10 Programme 2: Human Resource Development, Planning and Monitoring Coordination • Data collection of FET and Artisan sectors was strengthened and an electronic web based data collection system were developed • DHET hosted IBSA Academic Forum • Study visits were undertaken for accessing and sharing best practices, enhance cooperation with Switzerland, Finland, Sweden, Denmark, Germany, Norway, Oman, Cuba, Rwanda, and Burundi • Agreements of cooperation were signed with Cuba, Rwanda and Burundi • A new trilateral cooperation project supported by USAID was approved 11 Programme 2: Human Resource Development, Planning and Monitoring Coordination • Higher Education Laws Amendment Bill, 2011 and Skills Development Bill 2011, were promulgated • Further Education and Training Colleges Amendment Bill, 2011 were approved by both houses of Parliament • 3 Sets of Regulations and 8 notices were drafted and published • 42 Legal opinions were drafted or vetted • 60 Agreements were drafted and/or vetted • 24 Court cases administered • Supported the establishment of the Ministerial Task Team on Recognition of Prior Learning and received public submissions on the proposed qualifications sub- frameworks 12 Programme 2: Human Resource Development, Planning and Monitoring Coordination Challenges: • No major challenges, all programmes operated on a reduced and constrained budget • 8 Targets were partially achieved and 1 target was not achieved • Some of the targets were not achieved within the programme as a result of capacity constraints: - Director only assumed duty on the 1 September 2011 - Deputy Director was temporary seconded to another unit 13 Programme 2: Human Resource Development, Planning and Monitoring Coordination Mitigation: • Seconded Deputy Director is back within the Branch • To date 2 of these targets have been achieved and remaining 8 will be achieved before the end of the financial year 14 Programme 3: University Education Purpose: To develop and coordinate policy and regulatory frameworks for an effective and efficient university education system. To provide financial support to universities, the National Student Financial Scheme and the National Institute for Higher Education Budget sub-programmes: • Academic Planning and Management Support • Financial Planning and Information Systems • University Subsidies • Policy and Development • Teacher Education 15 Programme 3: University Education Key Achievements: The Ministerial Statement on Enrolment Planning in Universities for 2011/12-2013/14 was approved and communicated to all universities Approved Project Plan, Project Management Team and Project Steering Committee to oversee the establishment of the two new universities Final draft of the Policy framework for the provision of distance higher education in South Africa was submitted to the Minister for approval to publish in government gazette for public comment 16 Programme 3: University Education Project plan for the establishment of a national Central Application Service was developed and work has started Report of the Ministerial Committee for the Review of the Provision of Student Housing at South African Universities was published and launched by the Minister Implementation of Phase 3 of the Higher Education HIV/AIDS Programme was successfully implemented • A National Transformation Seminar was held as a follow-up to the Higher Education Stakeholder Summit held in 2010 17 Programme 3: University Education • Launch of the Ministerial panel on African languages • Integrated Strategic Planning Framework for Teacher Education and Development in South Africa (2011-2025) was published and launched • The Minimum Requirements for Teacher Education Qualifications (MRTEQ) was published in the Government Gazette as policy and implementation started • The draft Minimum Requirements for FET College Lecturer Qualifications was completed and ready to publish for public comment 18 Programme 3: University Education • Foundation Phase Teacher Education was strengthened: - 20 Universities involved in Foundation Phase Teacher Education (up from 13 in 2009; 14 offering programmes and 6 preparing to offer by 2014) - 24 New childhood education academics employed at universities - 13 Research and development projects involving 20 universities supported - Publication of 33 journal articles - Scholarship support for 4 Honours students, 34 MEd students and 39 PhD students (human resource development for expansion) 19 Programme 3: University Education - South African Journal for Childhood Education (SAJE) supported and launched with two editions published - South African Association for Research in Early Childhood Education (SAARECE) established Challenges: • 3 Universities were placed under administration (University of Zululand; Tshwane University of Technology, Walter Sisulu University) and independent assessments in 2 other universities (Vaal University of Technology and Central University of Technology) were undertaken 20 Programme 3: University Education • 26 Targets were partially achieved and 10 targets were not achieved • Staff shortages remain the biggest internal challenge Mitigation: • To date 11 of these targets have been achieved, 19 partially achieved and 6 not achieved • Increase capacity in the Branch (4 Director posts have been advertised in this regard) • Improved communication and relations with universities 21 Programme 3: University Education • Improved monitoring and evaluation measures, including implementation of new reporting regulations and criteria for earmarked grants • Strengthen relations with CHE and SAQA with respect to their responsibilities as described in the NQF Act to ensure better alignment with the DHET objectives • Improve performance management in certain sections of the Branch 22 Programme 4: Vocational and Continuing Education and Training Purpose: To plan, develop, evaluate, monitor and maintain national policy, programmes and systems for vocational and continuing education and training, including further education and training colleges and post- literacy Adult Education Budget sub-programmes: • Planning and institutional support • Programmes and qualification 23 Programme 4: Vocational and Continuing Education and Training Key Achievements: • The community education and training centres and the conversion of DFET Colleges into VCET Institutions has been gazetted as delivery institutions for the VCET sector • The National Senior Certificate for Adults was published for public comment • An additional National Certificate (Vocational) programme, namely Transport and Logistics has been introduced • A Ministerial Task Team was established to review the NCV qualifications at levels 2-4 24 Programme 4: Vocational and Continuing Education and Training • The curriculum for an additional programme, namely Primary Health was completed in partnership with the HWSETA and the Department of Health for implementation in 2013 • The internal continuous assessment (ICASS) guidelines were developed to strengthen the NCV delivery • 26 units of lecturer training delivered in the last financial year supported the implementation of the Internal Continuous Assessment guidelines in all 50 colleges 25 Programme 4: Vocational and Continuing Education and Training • Access into FET colleges was significantly expanded through the R1.270 billion bursary allocation awarded to 165 273 students enrolled in the state-subsidized programmes • The Quality Council for Trades and Occupations (QCTO) has assumed the role of quality assurance for N4-N6, including the National Diploma in Report 191 • On-site training of NC(V) Level 4 and ABET-GETC Level Panel is in setting of question papers and site- based assessments tasks was held 26 Programme 4: Vocational and Continuing Education and Training • 9 National Examination Cycles were held (7 were for FET College sector, and 2 for AET) with the following achievements: - Registration of 866 491 candidates for National Examination - Monitoring and registration of 382 Public and Private examinations centres - Setting and moderation of 1 417 question papers and 65 site-based assessment tasks - Printing, packing and distribution of question papers for the FET College sector 27 Programme 4: Vocational and Continuing Education and Training - Marking of 2.5 million scripts for the FET College sector - Capturing of 5.08 million marks for the FET College candidates - Monitoring of examination centres during the conduct of examinations and marking sessions throughout the year - Standardisation of all examination marks - Resulting and certification of candidates for the FET college sector - Enrolment rates rose by 34% from 2011 28 Programme 4: Vocational and Continuing Education and Training - The success rates based on November 2011 results showed a dramatic improvement in success rates averaging 40% across levels • In regulating private FET colleges, the following were achieved: - 501 Private colleges were registered - 123 Private colleges were registered as examination centres - Compliance and performance reports on 384 provisionally registered colleges - Identification of 28 illegally operating private colleges and the arrest of their managers 29 Programme 4: Vocational and Continuing Education and Training Challenges: • Capacity constraints were experienced in the areas of on-site security, staff allocation and budget allocation in regard to the examination function • 15 Targets were partially achieved and 13 targets were not achieved • Delays in securing the National Treasury Technical Assistance Unit to provide technical expertise in scoping and supporting the move of the provincial VCET functions, budgets and personnel to the Department 30 Programme 4: Vocational and Continuing Education and Training • Continued operation of unregistered private institutions • Lack of readiness across the AET system to implement the funding norms for public Adult Learning Centres Mitigation: • To date 11 of these targets have been achieved, 9 partially achieved and 8 not achieved • Amendment to FET Colleges Act of 2006 in May 2011 resulted in new consultative structures • Draft Policy on Professional Qualifications for FET College Lecturers was published in the Government Gazette 31 Programme 4: Vocational and Continuing Education and Training • Piloting of the Integrated Financial Management Systems (IFMS) • Draft document - National Norms and Standards for Funding FET Colleges • All remaining outstanding policies, reports, curriculum and programme development will be completed within this financial year 32 Programme 5: Skills Development Purpose: To promote and monitor the National Skills Development Strategy Budget sub-programmes: • SETA Coordination • National Skills Development Services • Quality Development and Promotion 33 Programme 5: Skills Development Key Achievements : • The National Artisan Moderation Body (NAMB) was partly operationalised and appointed as the first assessment quality partner for the QCTO • 13 168 Artisan learners completed training nationally • Convened the Skills conference on the deepening of understating of the NSDS III • SETA levies were managed and disbursed on a monthly basis • Scarce skills information was aggregated as per the sector skills plans • The OFO codes and guidelines were updated 34 Programme 5: Skills Development • New SETA landscape and establishment of SETAs were published in government gazette • SETAs were supported in the development and alignment of their sector skills plan through the SSP framework and Strategic Plan Framework Challenges: • Staff vacancies at INDLELA relating to technical persons who are able to carry out testing due to the scarcity of qualified artisans who are also assessors • 14 Targets were partially achieved and 13 targets were not achieved 35 Programme 5: Skills Development • Full operationalisation of NAMB • Regular breakdown of IT services due to cable theft limits the efficiency of INDLELA operations • Delay in the provision of advice on the Annual Performance against the NSDS III by NSA Mitigation: • To date 12 of these targets have been achieved, 8 partially achieved and 7 not achieved • Ongoing advertising and head hunting. Started the re- engineering of INDLELA to focus on RPL for artisans aides 36 Programme 5: Skills Development • Lack of funding from National Treasury has been replaced with funds from National Skills Funds • Recruitment in process for 16 Deputy Directors and 36 Interns • Process to purchase a wireless micro link to avoid reliance in cables in process with SITA/GITO • NSDS data collection in progress from all stakeholders 37 Financial Statements Actual Allocation Programme Expenditure % Spent R'000 R'000 1: Administration 155 688 152 404 97.9% 2: Human Resource Development, 38 734 38 074 98.3% Planning and Monitoring Coordination 3: University Education 23 428 991 23 428 356 100.0% 4: Vocational and Continuing Education 4 545 463 4 540 838 99.9% and Training 5: Skills Development 130 638 122 025 93.4% 6: Direct Charges (SETAs and NSF) 10 095 113 10 025 251 99.3% Total 38 394 627 38 306 948 99.8% 38 Allocation versus Expenditure Variances • Programme 1: Administration – Slow filling of vacant positions and concomitant under-expenditure on machinery and equipment – Lower than expected invoicing of Audit work by 31 March 2012 • Programme 2: Human Resource Development, Planning and Monitoring Coordination; Programme 3: Universities and Programme 4: Vocational and Continuing Education and Training – Had no material allocation versus expenditure variances • Programme 5: Skills Development – Under-spending on the Indlela security system 39 Spending Trends per Economic Classification Actual Allocation Economic Classification Expenditure % Spent R'000 R'000 Compensation of Employees 310 168 305 598 98.5 Goods and Services 159 166 155 165 97.5 Financial transactions in assets and liabilities - 96 - Transfer Payments Provinces and municipalities 4 375 311 4 375 311 100.0 Departmental agencies and accounts 14 177 158 14 107 295 99.5 Universities and Technikons (current) 19 354 159 19 354 159 100.0 Foreign governments and international organisations 2 443 2 379 97.4 Non-profit institutions 3 000 3 000 100.0 Households 245 240 98.0 Capital Expenditure Machinery and equipment 12 862 3 591 27.9 Software and other intangible assets 115 114 99.1 Total 38 394 627 38 306 948 99.8 40 Auditor-General Report • Received an unqualified audit opinion • Key matters raised by the Auditor-General: – Significant Uncertainties Defendant in a number of law suits. The department is opposing the claims and the ultimate outcome of these cannot be presently determined – Restatement of Corresponding Figures Lease commitments for the 2010/11 financial year has been restated – Performance Information Major variances are not in all cases supported by sufficient appropriate evidence 41 Action Plan • The Department has developed action plans to address matters raised • These plans include all areas raised in the Audit Report as well as all other matters identified during the audit that resulted in audit queries • Progress on the action plans will be monitored on a monthly basis and will be reported to the Audit Committee and Senior Management 42 Thank You 43
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Priorities: Obama Used Autopen To Sign "Fiscal Cliff" Legislations
Roughly since mid-November (NMP) Obama has been Cranking up the pressure on passing "fiscal cliff" legislation. He's been excoriating Republicans. He made dire predictions. He came out to make statements and Blame Republicans. Of course, he himself created a situation whereby the deal was done after the last minute. Nor did he excoriate Harry Reid for refusing to allow a vote on Obama's fiscal cliff plan. But, we were told how super duper massively important this legislation was. So, how did he sign it? The Washington Post tells us in a story that is web-only
The hard-fought legislation that allowed the United States to avoid the "fiscal cliff" was signed into law on Wednesday by autopen, the White House said, less than a day after being approved in a contentious vote in the House of Representatives.
President Obama, who interrupted a family vacation here to oversee the cliff negotiations in Washington, returned to Hawaii on an overnight flight that arrived early Wednesday. He spent the day working out a local gym, golfing and dining with first lady Michelle Obama and some friends at a favorite Hono:lulu restaurant, Alan Wong's.
In between, Obama reviewed a copy of the cliff legislation, titled the "American Taxpayer Relief Act of 2012," and directed that the original – still in Washington – be signed by autopen.
It tells you where Obama's priorities lay in that he couldn't wait to receive a copy of the legislation and sign it in Washington. Nor could he be bothered to even read it on the long taxpayer funded flight back to Hawaii. Nor even read it first thing in the morning. No, he waited till he fooled around while on vacation, and could not be bothered to actually sign the legislation.
Crossed at Pirate's Cove. Follow me on Twitter @WilliamTeach.
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Coming soon: Did BSkyB beat its rivals?
Sunday 27 January 2013
BSkyB investors are anxious to hear what impact online rivals such as Netflix and LoveFilm are having on its pay-TV business – and how its own cut-price web service Now TV, launched last summer, is performing.
Jeremy Darroch, the chief executive, has not released any numbers so far, but he will be under pressure to say more at Thursday's half-year stage.
The broker Jefferies believes that YouView, the new internet-enabled set-top box from BT, TalkTalk and others, is a threat; but Numis Securities counters that Sky is "structurally robust".
Sky, whose shows include The Following, starring Kevin Bacon, will report a jump in revenue for the first full quarter since an annual price rise came into effect, following a freeze for customers in 2011.
Numis forecasts a 16 per cent rise in earnings, with half-year profit at £600m.
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Evidence shows that, in the event of a disaster, the education sector is one of the hardest hit. In Pakistan, not only have all major disasters greatly affected school children and school buildings, but also internal conflicts and direct attacks on schools have made them more vulnerable.
Evidence shows that, in the event of a disaster, the education sector is one of the hardest hit. In Pakistan, not only have all major disasters greatly affected school children and school buildings, but also internal conflicts and direct attacks on schools have made them more vulnerable.
Department of Economics
in association with Capacity Africa Training Institute
Short-courses and Consultancy Programme in Monitoring and Evaluation
We invite you to our next practical training program on Public Procurement Practice. The practice of public procurement in Kenya is now at its Third Generation. This training prepares practitioners engaged in public procurement as well as public-private partnerships for the emerging procurement regime.
Unit 1:Procurement Systems: Analysis of the national and county structures for procurement, the functions of National Treasury, procurement regulatory authority, national professional body, and PPP structures.
El Programa de las Naciones Unidas para el Desarrollo en Colombia (PNUD), en alianza con el equipo de formación Virtual de la Dirección Regional para América Latina y el Caribe (DRLAC) y el apoyo de ONU Mujeres y la CEPAL, están lanzando la Iniciativa de Formación Virtual Los Objetivos de Desarrollo Sostenible, Colombia y los Planes de Desarrollo Local, en aras de sentar una base de entendimiento común sobre la Agenda Post 2015, los Objetivos de Desarrollo Sostenible y dar herramientas a …
Gender equality has become a generally accepted refrain and gained secure positioning within international approaches to, and discourse on, development and human rights. However, it took decades of advocacy for gendered diversities to become effectively acknowledged as relevant to the international human rights system. In this process, the recognition that "women's rights are human rights" played a central role.
This e-learning course aims to equip professionals who hold responsibilities for implementing child safeguarding policies within their organisations with a basic understanding of the key issues, concepts and frameworks pertaining to child protection and safeguarding. This course will help build the knowledge and skills to enable them to strengthen, develop and implement protection measures to keep their organisations safe for children.
This e-learning course provides participants with knowledge of the concept, types, venues and strategies of human rights litigation. It focuses on strategic litigation and legal aid both internationally and domestically, and explores a variety of strategies: issue or group oriented litigation, community based services, legal clinics, NGO or law firm resourced actions and others. Participants are familiarised with court ordered structural relief, as well as with conventional victim-centered legal remedies.
Project Management Monitoring and Evaluation - 24th to 27th November 2015.
We're pleased to offer three dynamic, two-day workshops that deliver the essential elements of participatory assessments, program design, monitoring, evaluation, and learning from programs.
The training lays out a step by step process starting with how to engage key stakeholders: the people directly affected by the project, and the people you need to influence to make it happen. Then we identify ways to build participation into program design, planning, monitoring and evaluation - with practical tools at each step.
Now in its seventh year, the conference will be hosted in Africa for the first time by the University of Pretoria Gordon Institute of Business Science and co-organized by Georgia Tech, INSEAD, MIT and Northeastern University. The mission of the conference is to stimulate innovation and build capacity to manage global health and humanitarian supply chains around the world. It brings together high level speakers from across the health and humanitarian sectors, including non-governmental organizations (NGOs), industry, government, etc.
Governments worldwide are increasingly facing more challenges in dealing with rising public expectations. In order to make the needs of the future, the fundaments of public governance should be in place to serve as an anchor in a turbulent world economy. This programme will provide an in-depth examination of the structure and workings of the government and demonstrate how it has created a networked government to facilitate policy formulation and implementation so that it is better positioned to serve its people.
Join us on Thursday, 6 August for a live online consultation event organized by PHAP in support of the World Humanitarian Summit on the topic of Gender-Based Violence in Humanitarian Crises.
Event Description
Join us on Tuesday, 4 August, to hear from Under-Secretary-General and Emergency Relief Coordinator (USG/ERC) Stephen O'Brienregarding his perspectives on the World Humanitarian Summit and to ask your questions about the Summit and the process leading up to it.
Event Description
There is increasing demand from multilateral agencies, funding bodies as well as boards of private companies for a strong demonstration that projects are being monitored and evaluated effectively.
Effective project monitoring allows a project team to make appropriate decisions on a day-to-day basis and ensures that projects are carried out as planned and modified when necessary.
Asset Africa Institute (www.assetsafrica.org), is a premier development training brand in Africa which endeavors to build and enhance the skills development needs of public benefit organizations to produce better, more skilled organization staff , with increased ability to manage projects with greater confidence, effectively monitor projects to improve results and quality while instituting strong, well focused and highly motivated project teams. We are pleased to announce the following training workshop for the month of September 2015.
With human capital being a key resource of any government, it is important to deepen the capabilities of HR officers to enable them to become strategic partners who can add value to their organization's performance. This programme will provide you with a better understanding of the Human Resource framework, policies, strategies and practices in the Public Service and the global best practices in HR management.
For whom the course is relevant
Learning is key to continuous improvement ....
What is this course about?
Keeping track of the progress of a project or programme is key in determining the success and relevance of development interventions. The set-up of practical and user-friendly monitoring systems will greatly assist efficient project management. The M&E system should be based on identification of the real information needs of an organisation and systematically collecting and using data for good decision-making. This course explains how to go about it.
Strategic Human Resources Workshop
From 25th to 27th August, 2015 in Kabul
We recommend using this service, if you need to make a change in HR strategy
****Call for Applications: Humanitarian Assistance in West Africa****
Course Date/Duration: 26 October – 06 November 2015
Course Capacity: 25 participants
Application Deadline: 06 September 2015


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oral probs
Mar 10, 2001
Dear Doc,
what is this?? (I search over inetrenet sites regarding hereunder probs but to no avail, hope you had any ideas)
I had unremovable white sponge-like nerves (or white cracking lines or nerves) both in my cheeks, that would stick some of its white paste-like bet. my gums and teeth DURING waking up in the morning and/or having toothbrush w/ colgate total which are removable. This is associated also w/ a white coating on my tongue (particularly on the middle); dark red tonsil; thinning on my gum. (theres no any soreness or irritating feelings so far for 44 days after it started)
WHAT are these tiny small red dots on the tip (front) on my tongue?? indicates what??
Hope for your kind attention and reply. Thank you very much.
Regards, John
Response from Dr. Henry
You don't mention what your HIV status is (that would influence my answer). White patches could be due to infections like yeast (candida) or viruses (Epstein-Barr-Virus) in the setting of HIV infection. Often they are simply accumulations of dead cells (sometimes worse with bad hygiene, smoking, vitamin deficiencies). The read areas could simply be irritated areas of the tongue. You should see an experienced HIV doc if you are HIV infected or a good primary care doc if you are not to sort out. KH
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Mulayam Singh Yadav threatens to review support if quota bill is passed
Mainpuri: Terming the proposed legislation on SC/ST quota in promotion as anti-national, Samajwadi Party supremo Mulayam Singh Yadav on Saturday said his party would review its stand on supporting the UPA government from outside, if the Bill is passed.
"If voting is done on the Bill in the House, I will reconsider my party`s support to the government.... We will review party`s outside support to the government," he told reporters here.
"The bill is anti-national and will divide the people. My party has opposed the bill inside and outside the House and will continue its opposition," Yadav said.
He said it was unfortunate that his party members who were opposing the "anti-people" bill were thrown out of the House.
Yadav said that he had asked the Prime Minister why he was not "bringing out the facts about the posts that will be captured by people" due to reservation in promotion.
"For just 22 per cent people, rest of the population including general candidates, backward castes and other communities will suffer immensely creating problem in society," he warned.
Yadav claimed that if the bill was passed "then no Prime Minister will get a cabinet secretary nor any chief minister will get chief secretary of any other caste".
The UPA has just over 250 MPs in the Lok Sabha after the TMC withdrew support from the government. The UPA is provided crucial support from outside by 21 MPs of the Samajwadi Party and 22 MPs of Mayawati-led Bahujan Samaj Party, which is batting for the quota bill.
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Vintage Knight's Templar Ceremonial Belt W/ Sword Hangers Red Enameled Buckle For Sale
PLEASE READ THE ENTIRE DESCRIPTION! I'M NOT AN EXPERT IN ANY AREA. EVERYTHING SOLD AS IS. I do not pre-pack my items so shipping estimates may be high. I will refund the majority of the difference if my shipping estimates are wrong. I almost always ship items out 1 or 2 days after payment is received. I ship USPS first class, priority, media mail(when applicable). Currently does not offer parcel select as an option for shipping. I can ship parcel but would have to send you an invoice after item is purchased. Please let me know if you are interested in a quote and send me your zip code. I do combine shipping. I do combine shipping.
INTERNATIONAL SHIPPING- I ship USPS first class and priority. First class has a 4 pound max. Anything higher must go priority. Any item that is offer on and won (or a combination of items) with a value of over $20 USD (including the cost of shipping) will be required to be shipped priority or first class with registered mail added. Registered mail starts at $10.95 on top of shipping. I will have to pack item or items and and give you an estimate including registered mail after. If you pay before I add registered mail costs I WILL NOT SHIP UNTIL YOU PAY THE ADDITIONAL COSTS! This is because I am having packages disappearing (I prefer to say stolen) when shipped first class without registered mail because first class has no tracking without registering.Up for offer is a vintage Knight's Templar ceremonial belt w/ buckle & sword hangers.Apron has some wear. Leather/rawhide has a little wear. Could use moisturizer. Scratches on metal. Overall decent condition. Owners name marked as shown. Belt measures about 42", hangers about 9" and 20" off belt.
If you have any questions or would like more pictures, feel free to ask.
Thanks and good luck on your offerding!
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Nice to meet you here at ringtone download service Audiko.net, where you can aquire the best ringtones for your smartphone. Today we have a ringtone of "Long, Long Way To Go" by def leppard as well as 552 other ringtones by def leppard. "Long, Long Way To Go" is a gorgeous track from the "X" album that was produced by def leppard at their major label together with other 5 tracks. You can listen to all 7 def leppard – "Long, Long Way To Go" ringtone variations available here and download it for free to your hard drive. You can also select other 13 albums produced by def leppard for all time. "Long, Long Way To Go" is referred to Hard Rock, and Audiko offer a huge amount of Hard Rock compilations absolutely for free. And finally, we have collected lyrics for this track and you can view it here as well. So feel free to browse, listen, download ringtones at Audiko.net. Make your phone sound cool!
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"Rowdy" Roddy Piper Reported Dead at 61
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A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.
1. Introduction
InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with lateral geometries grown by metal-organic chemical vapor deposition (MOCVD) are very attractive and give variable applications covering visible emission from yellow-green to blue spectra. Recently, due to the significant improvement on epitaxial technique of nitride-based material system, the perfect crystalline quality of InGaN/GaN-based LEDs has become possible. However, the current-crowding phenomenon [1] still limits their light output efficiency. This drawback is known to be mainly originated from the high-resistive p-GaN contact layer [2], due to the high activation energy of Mg dopants and low acceptors (holes) mobility. A higher operation voltage of a GaN-based LED is inevitable because of the Schottky-like characteristic of the p-GaN contact layer, and the induced joule-heating effect underneath n- and p- metal pads deteriorates optical, electrical properties, and the reliability of LEDs [1].
Up to date, the indium tin oxide (ITO) layer has been reported to enhance the current spreading performance of GaN-based LEDs [3]. However, the poor Ohmic nature between the ITO current-spreading layer and high-resistive p-GaN contact layer [3, 4] seems still remain a miserable problem. Recently, many approaches have been raised trying to enhance this Ohmic contact property. For example, one could apply an InGaN/GaN superlattice (SL) structure above (increases hole concentration for contact) [5]/underlying (modulate current and release strains) [3] the p-GaN contact layer, or an InGaN capping layer on the p-GaN layer [6] to lower down the contact resistivity. However, these methods cause a relatively complicated growth process and high cost of LEDs. Without complicating epitaxial growth conditions, a lower contact resistivity was achieved by an In2O3/ITO structure [7] studied by our group. Nevertheless, the p-GaN Ohmic contact property needs to be further improved.
One could find some significant progresses related to enhancing p-GaN Ohmic contact by means of a Ni/Au current-spreading layer [8] or a Pd contact layer with a surface treatment by aqua regia solution [9]. However, many extracted photons from active region will be sacrificed underlying these opaque metal contact/current-spreading layers. In this work, based on an Au thermal-diffused and removed thin layer, an easy and feasible method to form an ITO direct-Ohmic contact characteristic on the p-GaN layer is implemented, without significant photon loss within blue spectra. The corresponding mechanism will be explored in detail.
2. Experimental
The studied LED device (denoted as device B) was grown by a Thomas Swan metal organic chemical vapor deposition (MOCVD) system on a c-plane (0001) oriented sapphire substrate with a 0.2° off toward (1-100) plane. The epitaxial structures consisted of 30 nm GaN buffer layer, 2 μm-thick undoped GaN layer, 2 μm-thick Si-doped n-GaN layer (n=1×1018cm−3), 12-period In0.2GaN/GaN (3 nm/12 nm) MQW as active layers, followed by a 0.3 μm-thick Mg-doped p-GaN layer (p=4×1017cm−3). Then, the as-grown wafers were first cleaned by acetone and deionized water sequentially. An Au metal thin film (10 nm in thickness) was thermally evaporated on the p-GaN contact layer. In order to diffuse Au atoms into p-GaN layer, samples were annealed in N2 ambient at 400°C for 30 min. in a quartz furnace. Referring to the metal thermal-annealing followed by removed processes, different kinds of metal films (such as Ni, Cr, and Au) with the same thickness of 1 nm treated by various annealing temperatures (200, 300, 400, and 470°C) and times (10, 20, 30, and 40 min.) have been carried for choosing a better specific contact resistance for p-GaN/ITO contacts, as shown in Fig. 1 . Generally, it was found that optimized thermal-annealing conditions are 400°C for 10 min., 470°C for 20 min., and 400°C for 30 min. for Ni, Cr, and Au, respectively. Of all these, the better contact resistance is found for Au metal, at thermal-annealing conditions of 400°C for 30 min.. This result may be ascribed to the facts that gallium exhibits higher soluble in Au rather than other metals [10] including Ni and Cr. The residual Au metal film after annealing process was totally removed by using aqua regia solution (HNO3: HCl = 1:1) for 5 min.. For comparison, the conventional device (device A) which did not need Au film evaporation as well as the followed thermal annealing processes, was dipped in the same aqua regia solution for the same etching time. In fact, for the device B, the residual Au film could be removed completely within etching time of 30 sec., but a longer etching time is chosen to keep p-GaN layers of devices A and B exposing to aqua regia solution for nearly the same time. This progress is very important to verify that the improved p-GaN Ohmic contact property for the device B is not related to a pure surface treatment by the aqua regia solution proposed by Lee et al. [9]. Also note that the epitaxial structures of these two devices need to be grown for the same run. After the wet-etching process, top-view high resolution scanning electron microscope techniques were applied to examine whether all Au residuals were removed or not on the p-GaN layer. Prior to chip processes, X-ray diffraction (XRD), Hall measurements, room temperature micro-Photoluminescence (RT μ-PL, Jobin-Yvon U1000) techniques, secondary ion mass spectrometry (SIMS), and X-ray photoelectron spectroscopy (XPS, PHI Quantera SXM) were used to analyze the exposed p-GaN surface. An inductively coupled plasma (ICP) system was utilized to define mesa regions. A 250 nm-thick ITO layer was deposited on the p-GaN layer by an electronic beam evaporator. Cr/Pt/Au metal was deposited as n- and p- pad Ohmic contacts. The ITO layer and n-p pads were activated for 30 min. in N2 ambient at 470°C and 380°C, respectively. These wafers were diced into individual chips with the dimension of 300 × 300μm2. The current-voltage (I-V) characteristics of devices were measured at room temperature by a semiconductor parameter analyzer (HP 4156). The specific contact resistances of p-pad/ITO/p-GaN interface were obtained by square
Fig. 1
transmission line model (s-TLM). The light output power was measured by a Si photopic detector integrated with a current source. Dominant wavelengths are around 457 nm for both devices at 20 mA, determined by electroluminescence spectra.
3. Results and discussion
Figure 2 shows Au4f and Ga3d XPS analyses for the device B before and after 400°C thermal annealing process. A location of "0.0 nm depth" in this figure is defined by the p-GaN contact surface after removal of Au metal film. Clearly, after thermal annealing, Au atoms exhibit an in-diffused distance of around 2 nm. Note that a shallower in-diffusion width of around 1 nm is still found before annealing, probably due to thermal-annealed effect during metal evaporation. Moreover, a gallium out-diffused phenomenon is found with about 1 nm width after annealing. This indicates that an Au in- and Ga out-diffused (AuinGaout) layer with thickness of 1 nm is formed after 400°C annealing, accompanied by presence of many gallium vacancies which could be regarded as deep-level acceptors [8] on the p-GaN contact layer. Furthermore, the lower Ga3d intensity (20% reduction) on the p-GaN surface for the device B after annealing than that for the device A also suggests this finding. According to Hall measurement results for studied devices A and B summarized in Table 1 , the holes concentration, mobility, resistivity, and sheet resistance of the device A (B) are 3.15×1017 (1.83×1018) cm−3, 13.1 (13.0) cm2/V.s, 1.53 (0.26) Ω-cm, and 5.1×104 (8.6×103) Ω/□. These results demonstrate that a gallium-vacancy-rich p-GaN contact layer is formed after the Au thermal-diffused and removed processes. In other words, these gallium vacancies contribute to the remarkable increase in holes concentration and reduction in resistivity. In Fig. 3 , PL analyses are performed. It is found that the MQW (450 nm) and defect-related (560 nm) bands for both devices are similar, except for a slight reduction in intensity of p-GaN impurity (around 380 nm) band for the device B. This indicates that the AuinGaout layer in the device B has little influence on emission property and epitaxial quality. Only slight light absorption at 360-400 nm wavelength region induced by Au atoms occurs within the shallow (about 2 nm, underlying where less Au atoms can reach (see Fig. 2)) p-GaN layer. Furthermore, based on previous reports [11,12], the formation tendency of this AuinGaout layer possibly could be attributed to the coupling effect of GaAu2 inter-metallic compound, and/or related to the more rapidly diffusing Au species. To confirm that, XRD analyses of θ–2θ scan (Gonio scan) are performed. It is found that both devices show the same satellite peaks of GaN (0002) at 34.9° (2θ), GaN (0004) at 73.2°, and sapphire (0001) at 42.1°. However, only the device B exhibits a crystal peak at 16.5°, which is very close to that of the GaAu2 compound at 16.1° [12]. Note that this peak also could not be observed for the device B before Au thermal-diffused and removed processes. It indicates that this peak detection doesn't belong to a pure data variation between samples. Previously Lee et al. [9] also revealed that an Ni/Au Ohmic contact to the p-GaN surface was achieved after thermal annealing, due to the creation of many gallium vacancies, and this could be explained by the fact that Ga exhibits high soluble in Au [10]. Therefore, obviously this mechanism could be directly referred to our result. In fact, according to Waki et al.'s researches, the reason for higher holes concentration on p-GaN contact layer for the device B may also be explained by the metal (Ni) catalytic effect to achieve hydrogen desorption [13]. However, the similar hydrogen SIMS profiles (not shown) for both devices in this work seem don't support this hypothesis.
Fig. 2
Fig. 3
Figure 4 depicts p-GaN/ITO/p-pad Ohmic contact properties (derived from I-V curves in Fig. 5 ) of devices A and B from −5V to 5V. These characteristics are measured directly from two p-contacts on the same mesa regions respectively, as referred in the schematic diagram of the device B in the inset of Fig. 4(where the location of AuinGaout layer is also drawn). Due to the lack of an AuinGaout layer which significantly improves Ohmic contact between p-GaN and ITO layers, the device A still exhibits poor voltage-dependent contact resistances ranging from 44.7 to 67.1 KΩ. On the other hand, Ohmic-like contact resistances from 11.8 to 12.2 KΩ are found for the device B. The corresponding specific contact resistances are evaluated to be 6.60×10−3 and 2.30×10−3 for devices A and B respectively, based on s-TLM. In other words, with a help of an AuinGaout layer on the p-GaN contact layer, the higher holes concentration and improved ITO direct-Ohmic contact property have become possible.
Fig. 4
Fig. 5
Figure 6 shows forward-biased I-V curves of devices A and B. The detailed I-V relations are also depicted in the inset. At 20 mA operation current, the devices A and B exhibit turn-on voltages (Vf) of 3.25 and 3.07 V, respectively. The 0.18 V reduction in Vf for the device B than the device A could be explained by the improved ITO direct-Ohmic contact property which relieves parasitic contact resistance [3, 14] between p-GaN and ITO layers. Basically this is ascribed to the higher hole concentration resulted from increased density of gallium vacancies on the p-GaN contact layer, as mentioned above. In addition, since the current injected from p-pad is effectively spread through the ITO current spreading layer due to the good Ohmic contact behavior, a lower dynamic resistance could also be expected. The corresponding dynamic resistances for both devices are shown in Fig. 7 . Clearly the dynamic resistances of the device B are always lower than those of the device A from 10 to 50 mA current operation region, suggesting that the p-GaN/ITO/p-pad contact resistance plays a significant role in device performance. At 20 mA, the device A exhibits dynamic resistance of 25.6 Ω, while device B only 18.0 Ω. The nearly 30% reduction in dynamic resistance is very important to shrinkage joule heating effect and increase power efficiency of LEDs.
Fig. 6
Fig. 7
Figure 8 demonstrates light output power as a function of injection current. At 20, 100, and 150 mA, light output power of 10.0 (11.8), 30.5 (37.4), and 38 (47.5) mW for the device A (B) are obtained, and the corresponding output power improvement are 18.0, 22.6, and 25.0%, respectively. It is clear that the improvement is increased with increasing current injection. We reasonably conclude that this mainly originates from the enhanced internal quantum efficiency of the device B, since both devices were designed as the same geometrical structure which confirms tiny variation in light extraction efficiency. In other words, the LED with an ITO direct-Ohmic contact film to p-GaN obtains a more linear and stable light output power increase with increasing current, due to the reduction of current crowding effect nearby the p-metal. It infers that the device B shows an improved current-spreading performance which results in a larger and more uniform light-emission area. On the other hand, the conventional device A easily suffers from current crowding phenomena, i.e., the injection current is mainly confined around the p-metal contact region. This certainly gives the increase of joule heating which results in rapid saturation of light output power [15].
Fig. 8
Figure 9 shows the emission dominant wavelength as a function of current. The wavelength shift for the device B is around 0.9 nm from 40 to 100 mA. This value is better than that of 1.7 nm for the device A. It could be explained by the fact that the studied p-GaN/AuinGaout/ITO structure exhibits a more uniformity of current spreading, giving rise to a relieved joule-heating effect from LED hetero-junctions. Accordingly, it lowers the current-crowding effect and LED junction temperature which results in a smaller wavelength variation. This means that the proposed structure could significantly improve the performance of GaN LEDs.
Fig. 9
Figure 10 shows light output power life time behaviors for both studied devices A and B, respectively. During testing conditions, both devices are always biased at 20 mA operation current. There are only around 1.5 – 2% output power degradations after 260 hrs aging time for both devices, indicating that the Au thermal-diffused and removed process for the device B would not severely influence reliability of light behavior.
Fig. 10
Figure 11 illustrates the output light images of devices A and B under 20 mA dc current. The output light intensity and uniformity on the device surface are clearly displayed referring to the color bar. From these photographs, a more uniform light emission could be observed for the device B, indicating its superior current spreading ability. Nevertheless, the injected current is always crowded nearby the p-metal pad for the device A. This result agrees well with the discussion in Fig. 8.
Fig. 11
4. Conclusion
In conclusion, an InGaN/GaN based MQW LED with an ITO direct-Ohmic contact to the p-GaN layer is achieved by means of Au thin film thermal-annealing and followed removed processes. An Au in- and gallium out-diffused (AuinGaout) layer is the primary origin to cause the performance improvement. Experimentally, the AuinGaout layer helps improving holes concentration, resistivity, and sheet resistance of the p-GaN contact layer from 3.15×1017, 1.53, and 5.1×104 to 1.83×1018 cm−3, 0.26 Ω-cm, and 8.6×103 Ω/□. At 20 mA operation current, the studied device (device B) exhibits lower dynamic resistance of 18.0 Ω and forward voltage of 3.07 V, as compared with a conventional device (device A) without the AuinGaout layer (25.6 Ω and 3.25 V). An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the reduced current-crowding effect by means of an ITO direct-Ohmic contact to the p-GaN layer.
This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 97-2221-E-006-237-MY3 and Chi Mei Lighting Technology Company.
References and links
1. X. Guo and E. F. Schubert, "Current crowding in GaN/InGaN light emitting diodes on insulating substrates," J. Appl. Phys. 90(8), 4191 (2001). [CrossRef]
2. L. Zhou, W. Lanford, A. T. Ping, I. Adesida, J. W. Yang, and A. Khan, "Low resistance Ti/Pt/Au ohmic contacts to p-type GaN," Appl. Phys. Lett. 76(23), 3451 (2000). [CrossRef]
3. Y. J. Liu, C. H. Yen, L. Y. Chen, T. H. Tsai, T. Y. Tsai, and W. C. Liu, "On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice structure," IEEE Electron Device Lett. 30(11), 1149–1151 (2009). [CrossRef]
4. K. M. Chang, J. Y. Chu, and C. C. Cheng, "Highly reliable GaN-based light-emitting diodes formed by p–In0.1Ga0.9N–ITO structure," IEEE Photon. Technol. Lett. 16, 1807 (2004). [CrossRef]
5. C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, and J. K. Sheu, "High brightness InGaN green LEDs with an ITO on n ++ -SPS upper contact," IEEE Trans. Electron. Dev. 50(11), 2208–2212 (2003). [CrossRef]
6. T. Gessmann, Y. L. Li, E. L. Waldron, J. W. Graff, and J. K. Sheu, "Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers," Appl. Phys. Lett. 80(6), 986 (2002). [CrossRef]
7. Y. J. Liu, C. H. Yen, C. H. Hsu, K. H. Yu, L. Y. Chen, T. H. Tsai, and W. C. Liu, "Impact of An indium oxide/indium–tin oxide mixed structure for GaN-based light-emitting diodes," Opt. Rev. 16(6), 575–577 (2009). [CrossRef]
8. S. K. Julita, G. Szymon, L. S. Elzbieta, P. Ryszard, N. Grzegorz, L. Michał, P. Piotr, T. Ewa, K. Jan, and K. Stanisław, "Ni–Au contacts to p-type GaN – Structure and properties," Solid-State Electron. 54(7), 701–709 (2010). [CrossRef]
9. J. L. Lee, M. Weber, J. K. Kim, J. W. Lee, Y. J. Park, T. Kim, and K. Lynn, "Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy," Appl. Phys. Lett. 74(16), 2289 (1999). [CrossRef]
10. Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami, "Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN," J. Electron. Mater. 28(3), 341–346 (1999). [CrossRef]
11. S. Nakahara and E. Kinsbron, "Room temperature interdiffusion study of Au/Ga thin film couples," Thin Solid Films 113(1), 15–26 (1984). [CrossRef]
12. M. Puselj and J. Schubert, "Kristallstruktur von Au2Ga," J. Less-Common Met. 38(1), 83–90 (1974). [CrossRef]
13. I. Waki, H. Fujioka, M. Oshima, H. Miki, and A. Fukizawa, "Low-temperature activation of Mg-doped GaN using Ni films," Appl. Phys. Lett. 78(19), 2899 (2001). [CrossRef]
14. J. S. Jang, "High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice," Appl. Phys. Lett. 93(8), 081118 (2008). [CrossRef]
15. Y. J. Liu, C. H. Yen, K. H. Yu, P. L. Lin, L. Y. Chen, T. H. Tsai, T. Y. Tsai, and W. C. Liu, "Characteristics of an AlGaInP-based light emitting diode with an indium-tin-oxide (ITO) direct Ohmic contact structure," IEEE J. Quantum Electron. 46(2), 246–252 (2010). [CrossRef]


text:
Windows 95
seeders: 12
leechers: 0
Added on Dec 7, 2009 in Applications > Windows
Downloaded 98 times.
Windows 95 (Size: 458.7 MB)
Windows 95 + Serial
Tested on VMware 6.5
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Top Comments
GBerlusconi415 • 25 Mar 2011, 00:31
Great, thanks! Fun to play with.
anonymous • 05 Mar 2013, 19:40
good for you
anonymous • 08 Apr 2013, 01:57
Windows 95 cannot have a hdd bigger the 3gb let alone 2.5tb.
All Comments
worxoxo1 • 17 January 2015, 21:08 Show comment
how to install on Parallels Desktop for mac??
anonymous • 09 May 2014, 08:57 Show comment
The serial's not working for me, says that it's not valid. Anybody else got this problem?
anonymous • 28 December 2013, 08:52 Show comment
how can it have 458 mb as size?? It should not be more than 23 mb cross checked with msdn
130gb444 • 16 August 2014, 02:44
Show comment
yeah, should be like 6-8 floppies. maybe its pre-expanded?
anonymous • 20 October 2013, 16:37 Show comment
i used this install on a old laptop i have laying around and now it only starts up in save mode. windows site tell me to test the 4 boot options and it only gives me the options to test 2. and i need the thirth one -_- gg windows 95
anonymous • 26 September 2013, 16:48 Show comment
This the best, using it for some old need for speed
anonymous • 28 August 2013, 06:41 Show comment
Works with a few hiccups on virtualbox. Near the end I got errors "THE FILE NDIS.VXD ON WINDOWS 95 cd-rom" After 1st restart got an error and not loading the system about ndis file not existing. I got it to work which I don't know how. I think it's worth the download, cheers.
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Scientists show bad androgen receptor impairs body's ability to dispose of damaged cells
Researchers at University of California, San Diego School of Medicine have identified the mechanism by which a rare, inherited neurodegenerative disease causes often crippling muscle weakness in men, in addition to reduced fertility.
The study, published August 10 in the journal Nature Neuroscience, shows that a gene mutation long recognized as a key to the development of Kennedy's disease impairs the body's ability to degrade, remove and recycle clumps of "trash" proteins that may otherwise build up on neurons, progressively impairing their ability to control muscle contraction. This mechanism, called autophagy, is akin to a garbage disposal system and is the only way for the body to purge itself of non-working, misshapen trash proteins.
"We've known since the mid-1990s that Alzheimer's disease, Parkinson's disease and Huntington's disease are caused by the accumulation of misfolded proteins that should have been degraded, but cannot be turned over," said senior author Albert La Spada, MD, PhD and professor of pediatrics, cellular and molecular medicine, and neurosciences. "The value of this study is that it identifies a target for halting the progression of protein build-up, not just in this rare disease, but in many other diseases that are associated with impaired autophagy pathway function."
Of the 400 to 500 men in the U.S. with Kennedy's disease, the slow but progressive loss of motor function results in about 15 to 20 percent of those with the disease becoming wheel-chair bound during later stages of the disease.
Kennedy's disease, also known as spinal and bulbar muscular atrophy, is a recessive X-linked disease men inherit from their mother. Women don't get the disease because they have two copies of the X chromosome. The genetic abnormality causes men to produce a mutant androgen receptor protein, which impairs the body's sensitivity and response to male sex hormones, sometimes resulting in testicular atrophy and enlargement of male breasts.
In experiments with mice, scientists discovered that the mutant androgen receptor protein besides disrupting male reproductive biology also deactivates a protein called transcription factor EB (TFEB) that is believed to be a master regulator of autophagy in nerve and other cell types.
Specifically, the mutant androgen receptor protein in Kennedy's disease binds to TFEB and blocks its ability to mediate the break-down and removal of non-working proteins and aggregated proteins.
"Our study tells us that if we can find a way to keep TFEB working, we likely can prevent this disease and others like it from progressing," La Spada said. "We now have a target for new therapies to treat not only Kennedy's disease, but also many more common neurological disorders."
Co-authors include Constanza J. Cortes, Helen C Miranda, Harald Frankowski, Yakup Batlevi, Jessica E. Young, Amy Le and Cassiano Carromeu, UC San Diego; Nishi Ivanov, Bryce L. Sopher and Gwenn A. Garden, University of Washington; and Alysson R. Muotri, UC San Diego and Rady Children's Hospital-San Diego.
Funding for this study was provided by the National Institutes of Health (R01 NS041648, R01 AG033082 and DP2-OD006495-01), Muscular Dystrophy Association and the California Institute for Regenerative Medicine.
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