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The sedimentation rate (sed
rate) blood test measures how quickly red blood cells (erythrocytes) settle in
a test tube in one hour. The more red cells that fall to the bottom of the test
tube in one hour, the higher the sed rate.
inflammation is present in the body, certain
proteins cause red blood cells to stick together and
fall more quickly than normal to the bottom of the tube. These proteins are
produced by the liver and the
immune system under many abnormal conditions, such as
an infection, an
autoimmune disease, or cancer.
There are
many possible causes of a high sedimentation rate. For this reason, a sed rate
is done with other tests to confirm a diagnosis. After a diagnosis has been
made, a sed rate can be done to help check on the disease or see how well
treatment is working.
Last Revised:
June 4, 2012
Healthwise Staff
Medical Review:
Anne C. Poinier, MD - Internal Medicine & Kathleen Romito, MD - Family Medicine
This information does not replace the advice of a doctor. Healthwise disclaims any warranty or liability for your use of this information. Your use of this information means that you agree to the Terms of Use.
How this information was developed to help you make better health decisions
To learn more visit Healthwise.org
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choices about online behavioral advertising, please click here.


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Area officials and those who work with children are being sought to attend an upcoming child passenger safety conference in Bismarck Oct. 1 and 2.
The North Dakota Department of Health's Child Passenger Safety Program is sponsoring the "Celebrating 30 Years of Buckling up Children" Child Passenger Safety Conference at the Ramada Bismarck.
More in Tuesday's issue of the Times-Record.
Valley City was host to the state Rec and Park Conference last week, and one event they hosted was a walk audit in which community leaders could participate. On Thursday, Mark Fenton, nationally-acclaimed authority on transportation, streets, planning and public health, visited the conference, spoke to local leaders and took them on a walk, explaining how an audit works along the way.
Thursday's walk served the purpose of showing leaders how to conduct an audit, but also gave participants an idea of how accommodating the area is for pedestrian traffic.
Read more in Tuesday's Times-Record.
The Barnes County Sheriff's Department and local farmers who participated in the 2011 capture of an escaped prisoner from an area corn field will be reimbursed for their efforts.

subset: commoncrawl


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Smart and agile, with a touch of humor, Australian Shepherds are a fun and active breed. Lovers of these intelligent dogs get to wear their favorite canine close to their hearts with these darling necklaces. Designed by artist Stephanie Conrad, these extraordinary handcrafted pieces feature the ultimate rendering of a charming breed. Hanging perfectly off of a ball chain, these are works of wearable art.
Set of 2 necklaces. Pendants measure 1" x 1". Silver-plated ball chain is 24" long but can be cut with scissors if a shorter necklace is desired. Pendant is not waterproof. Remove before showering or wherever excessive moisture is present. Materials are animal friendly—including resins and glazes (made from tree sap; no animal products).
The Pet Studio helps support animal rescue and donates a percentage of all artwork to reputable rescue organizations.
This product has no reviews yet. Be the first to review this product. Write a review
Enjoy 10% off your first order*


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I have a strange problem. I found out when I tried to fetch the rss2 feed into planetplanet and got an error.
I belive it's a problem with the character "&".
This is a part of the original url: viewer.php?albid=14&stage=2&imgid=22
WP returns exactly the same in the rss feed as the link indicates.
I tried to to this with another blogsite (not wp):
(I don't know if this page messes up this text, but it seems to me that other blogsites convert the "and-character: &" with &+amp; )
I hope this makes sense. Is it a bug? Should WP also add "amp;" after the character "&" in the RSS feed?


text:
Last week the StarTribune published a three-part series on youth and high school sports booster clubs....Read More
Must Read
This year's choice of Spring Lake Park Tower Days grand marshal was an obvious choice, except to the grand marshal herself. ...Read More
An Andover man and former Minneapolis police officer already accused of having or talking about sex with young girls faces six new charges in Anoka County....Read More
Gabbi Guimont led an Anoka sweep in the high jump at the St. Thomas select meet March 30. She cleared 5-2 while Lauren Sherva and Courtney Hlavka placed second and third in the event....Read More
The first debate between Republican 6th District Congresswoman Michele Bachmann and her Democratic challenger, hotel magnate Jim Graves, made up in feistiness what it lacked in timeliness....Read More
It's pretty typical for Halloween to be in the news come early October in Anoka....Read More
Forty years ago on Oct. 12, 1972, Northtown Mall officially opened....Read More
Richard Carlbom, campaign manager for Minnesotans United for All Families, looks at his parents and sees their marriage as a testimony to love, commitment and responsibilty. Their marriage, he says, is also a sign that the married couple will be in each other's lives forever....Read More
The votes have been counted and six Coon Rapids City Council candidates will move on to the Nov. 6 general election. ...Read More
When voters head to the polls this November, there will be two Scotts on the ballot in Minnesota House District 35B....Read More
The city of Anoka is at a crossroads over what to do about the well-known stone house on the Rum River....Read More


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All Fall Down
A mid-western melodrama from a Wiliam Inge script, ala Picnic, Come Back Little Sheba, or Splendor in the Grass. Good as any of those, perhaps blacker in tone. This was when Frankenheimer was on a roll. He'd recently left directing TV dramas and had an estimable run which began with this one, followed by Birdman of Alcatraz, The Manchurian Candidate, Seven Days in May, The Train, and Seconds. Good cast, a surprise.


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Taking Care: What is private duty care?
Do you, a loved one, or a neighbor feel unsafe at home due to a medical condition or age-related issues? Are you having difficulty preparing food, bathing, or getting into or out of bed? Are you unable to manage your medications and take them as prescribed? Is it a struggle to do your grocery shopping or errands? If you answered yes to just one of these questions, you should learn more about private duty care.
Private duty services are for individuals of all ages who need assistance with daily living within the comfort, security, and privacy of their own home. Private duty services foster independence and help create and maintain a safe living environment. Private duty caregivers offer peace of mind, also provide respite for a family caregiver, and may work alongside with home health and hospice care teams.
Unlike the intermittent home care paid for by Medicare, Medicaid, or private insurances, private duty care is paid for by the client and/or family, trusts, and some long-term care insurance plans. While private duty care is always tailored to the individual client's needs, services are provided by nurses, home health aides, and trained caregivers, and often include:
• Client advocacy and care management
• Skilled nursing care
• Medication management
• Bed and bath assistance
• Companion and homemaker services
• Personal transportation
• Help with laundry, meal preparation, and errands
• 24-hour care, if needed
There are three types of organizations that can provide private duty care in the home; a private duty agency, a nurse registry, and private care giver. Each type of agency provides in-home care, however there are differences regarding how the care is managed, licensure, and employment laws. I will include more information on these three types of organizations in a future article.
Many private duty home care organizations provide a broad range of services. The goal is to provide whatever a client needs to remain safe and independent in their home. Care Management may also be provided, along with a wide array of other services such as home health aides and specialty nursing programs including wound care and pain management.
As more Americans choose to remain in their homes while they age, finding the right type of private duty care for loved ones can be a challenge. To find a qualified private duty agency in your area, turn to the National Private Duty Association (NPDA), the nation's leading association for providers of private duty home care.
You deserve the peace of mind, trust, and security that working with a member of the NPDA can provide. All NPDA members must adhere to the organization's policies, procedures and ethical standards for home care. They have an "Agency Educator" to provide consumers with a comprehensive list of NPDA members nationwide. Visit www.privatedutyhomecare.org for more information, or visit the Private Duty Homecare Association at www.pdhca.org .
For more information about Private duty services, please contact Nightingale Private Duty Nursing at 772 778-0159.
Joyce Baldrica is president and CEO of the VNA of the Treasure Coast and Nightingale Private Duty Nursing, Vero Beach-based non-profit organizations providing home healthcare, hospice care, homemaker services, companions, and transportation. To contact her with your questions, feedback, or suggestions about healthcare topics you'd like to learn more about, please call 772 202-8570 or email email@example.com.
This story is contributed by a member of the community and is neither endorsed nor affiliated with TCPalm.
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text:
Check HQ man! I want you too see the match first.
Ok just sent it to CT for his approval and it will be with you after.
KZ promo will be with you in a couple minutes just need to color and format
KZ promo will be with you tomorrow *well today now* morning. I was going to complete it tonight, but I had homework to do.
Heading there now bro.
Dude, could you pop to HQ quickly to check everything. I'll send the first and last now, and'll send the rest if everything is okay
I'll start it off tomorrow night if you want, I have a bit of a hectic day planned but should be able to get to it then.
Sort some space out mate!
sweet bro, I'm free all Saturday from around 1-3, then 7-till around 10 so I should have time to get it done then
The Trinity
Normal Member
Black Ninja!
Super Member
© 2011 eWrestlingNews, All Rights Reserved.


text:
June 1, 2012
Photo by Derrick Mahone
Former Mundy's Mill third baseman Rashad Crawford will play in Saturday's Clayton County All-Star Game at Lovejoy High. This past season, the Region 4-AAAA Player of the Year hit .507 with 41 runs scored.
Stories this photo appears in:
Clayton County all-stars take to the diamond
The cream of the crop in Clayton County high school baseball will have one more chance to rise Saturday at the third annual Clayton County All-Star Game at Lovejoy High.
Use the comment form below to begin a discussion about this content.


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32 year old man | Denver, CO, USA | Seeking women 25-35 within 50 miles
A man who has a grasp on quality living, and appreciates the motivation women bring to the human experience.
I'm trained as a PERSONAL TRAINER and MASSAGE THERAPIST, so at the very least I'm good to befriend ;) I'm not a typical guy and probably not what you think. I understand that energy is what everything operates from and my goals and desires are made manifest into physical form when my feelings of belief are strong enough. I am not here for the fairy tale relationship or a life companion. You women are wonderful, for many reasons, but I want a muse; an attractive intelligent woman that I can have a fun flirty relationship with to give me that extra dose of testosterone and excitement. As far as I know we get one shot at life, let's share a little love with no strings attached and no rules set forth by unenlightened people, shall we??? I rarely kiss on the first date and am not hard up for sex, so I don't want a 'wham bam, thank you ma'am'...had too many hot dummies in my life so there's no pressure or feeling of me trying to get in your pants when we meet. Just an easy, go with the flow setting. Let's be friends first. Besides the same benefit of increased excitement in your life, I will treat you like a lady and spoil you as much as I can(deservingly of course) Goals: * I will be the best fitness model in America * Moved to Colorado to search for mineral rich land with running water to start a farmstead and be completely self-sufficient, then teach others and start a commune to rid ourselves of the need to use a fiat money system. * Start a mentorship program to remind kids and adults of our true divinity and how to use the law of attraction properly together. Side notes: * I can be a bit of a goof ball, and am a complete dork * I mix well with ANY crowd (I'm a social chameleon) * I'm polyamorous All the nitty griddy: * Let's meet up at a coffee shop (or similar) or...we can chat on here but I might not be on this site long... We're all here to uplift each others' spirits and live a joyful fulfilled life! You want more honesty, openness, and love in the world? Then you must be the example. Let's lead the pack by spreading a little love with each other ;)
Camping , Dining out , Gardening/Landscaping , Music and concerts , Exploring new areas , Nightclubs/Dancing , Travel/Sightseeing , Video games , Wine tasting
Dancing, Golf, Inline skating, Martial arts, Other types of exercise, Swimming, Tennis / Racquet sports, Walking / Hiking, Weights / Machines, Yoga
I exercise 5 or more times per week.
I have Cats
I like Birds, Dogs, Exotic Pets, Fish, Horses, Other
Some other viewpoint
New to the area...but I love to get away from the city when I can to clear my mind.
Camping, transforming my body, giving massages, providing energy work, expanding my consciousness, sharing love, meeting beautiful cool women ;)
Hang out with you and explore this great state!
'How to Use the Science of the Mind' by Ernest Holmes. Just about to finish 'Sacred Journey of the Peaceful Warrior' by Dan Millman
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What he is looking for
|6'1" (185cms)
|5'0" (152cms) to 6'1" (185cms)
|Body type:
|Athletic and toned
|Curvy, Athletic and toned, Full-figured
|No preference
|Dark brown
|Auburn / Red, Black, Light brown, Dark brown
|No Way
|No Way
|Social Drinker
|Never, Social Drinker
|Sales / Marketing
|No preference
My real job is becoming a fitness model.
|$35,001 to $50,000
|No preference
|Never Married
|No preference
|Have kids:
|No preference
|Wants kids:
|No preference
|White / Caucasian
|No preference
It's a good mix..you'll likey ;)
|Spiritual but not religious
|Agnostic, Atheist, Buddhist / Taoist, Spiritual but not religious, Other, Christian / Other
We are all gods within, fully integrated with each other into the oneness most people call God.
|Some college
|No preference
I'm always researching new things and learning. This is the information age, so don't let my lack of degrees fool you.


text:
The 3rd quarter marks a seminal moment in the history of The Coca-Cola Company and of its bottlers, as Coke has begun to devolve power to bottlers in Latin America for the first time in decades, and will now share decisions and profits that were long the sole domain of Coke. This marks improvement for the entire system.
Target (NYSE:TGT) will report October comps of 3-5%, within its original plan, versus a 5.7% comparison. Mid-month, the company said comps were tracking in line with plan. In October 2005, comps were in line with plan for the first two weeks of the month but trended at the high end of plan for the last two weeks. Target faces the most difficult comparisons in women's apparel, boys' and girls' apparel, household/personal/baby, and shoes, which were the top-performing categories last year.
Home was still a weak category (it had been lackluster last year as well); but continue to look for pockets of improvement in areas such as domestics and home décor, where the retailer introduced a new line from designer Victoria Hagan (Perfect Pieces). Women's apparel should get a boost from the new Go International line from Behnaz Sarafpour, which officially debuts on November 1 (but might be set in stores a little earlier). Toys, which were a top category in September 2006, could continue to see strength in October as we head into the holiday season. In electronics, Target introduced extended service plans with relatively simple pricing compared to those offered at Wal-Mart; a year after WMT introduced them, the extended service plans have an attach rate in the mid-20s.


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34 year old man | Amargosa Valley, NV, USA | Seeking women 23-35 within 100 miles
Good guy seeks good woman
I'm a 32 yr old man who's always on the go anymore. I own a construction company and it does take up quite a bit of my time but I like the pressure of making my own destiny work wise. I live a hr north of Vegas but I'm getting ready to move there I'm on a house hunt Lol. I like anything outdoors from camping and fishing too 4 wheeling and riding dirt bikes. Lookin for someone who can have fun getting out and enjoy doing stuff but at the same time is ok with eating popcorn and watching a good flick. I'm pretty easy going and dont like stress. I'm a total believer in carma and I try and live my life as positive as possible. So if your a down to earth honest person who likes to b treated like a Lady then feel free to write anytime :-) Submitted from mobile
Camping , Coffee and conversation , Business networking , Cooking , Dining out , Fishing/Hunting , Gardening/Landscaping , Movies/Videos , Music and concerts , Exploring new areas , Playing sports , Shopping/Antiques , Video games , Watching sports , Wine tasting
Auto racing / Motorcross, Baseball, Basketball, Billiards / Pool, Bowling, Football, Golf, VolleyBall
I exercise 1-2 times per week.
I have Dogs
I like Horses, Other
I have a blue nose pit bull named rocky who is the best friend a guy could have
Some other viewpoint
Parts of Cali , Boston beautiful , Denver , Joes crab shack ,Outback , Yama Sushi the best Dumont and my home Big Dunes
Tryin new things I love adventure , love my guitars and my toys
. I like to see new things and try new resturaunts anything with a little adventure in it is a plus. I love all water (guess cause I live in the dessert lol). I'm a huge music fan love to see a good concert.
Four-wheeler magazine,las Vegas news papers
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What he is looking for
|5'10" (177cms)
|3'0" (91cms) to 8'11" (271cms)
|Body type:
|About average
|Slender, About average, Athletic and toned
|Blue, Brown, Green, Hazel
|Light brown
|Auburn / Red, Black, Light brown, Dark brown, Blonde, Dark blonde
|No Way
|No Way, Occasionally, Yes, but trying to quit
|Social Drinker
|Social Drinker
|Labor / Construction
|Administrative / Secretarial, Artistic / Creative / Performance, Executive / Management, Financial / Accounting / Real Estate, Labor / Construction, Legal, Medical / Dental / Veterinary / Fitness, Political / Govt / Civil Service / Military, Retail / Food services, Sales / Marketing, Self-Employed / Entrepreneur, Student, Education / Teacher / Professor, Technical / Science / Computers / Engineering, Travel / Hospitality / Transportation, Other profession, Law enforcement / Security / Military, Fashion / Model / Beauty, Architecture / Interior design
I own a small construction company.
|$75,001 to $100,000
|Less Than $25,000, $25,001 to $35,000, $35,001 to $50,000, $50,001 to $75,000, $75,001 to $100,000, $100,001 to $150,000, $150,001+
|Never Married, Currently Separated, Divorced
|Have kids:
|Yes, and they sometimes live at home (1)
|Yes, and they sometimes live at home, No, Yes, and they live away from home, Yes, and they live at home
|Wants kids:
|White / Caucasian
|Asian, Latino / Hispanic, Native American, Pacific Islander, White / Caucasian
I'm German black Dutch Irish and like a little Indian of some sort I'm a mutt I guess but whos not
|Spiritual but not religious
|Christian / Protestant, Spiritual but not religious, Other, Christian / Other
|English, Spanish
|High school
|High school, Some college, Associates degree, Bachelors degree, Graduate degree, PhD / Post Doctoral
I graduated high school then I did a carpenter / concrete apprenticeship.


text:
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(26 customer ratings)
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Write an online review and share your thoughts with other customers.
Pure brilliance November 23, 2011
Reviewer: legs and bums
This is by far the best Lesbian flick I've seen in a while. When Club 59 bought out Celeste I was in love but now I've seen this I've fallen love all over again. The best thing about this flick is that all the girls are natural and no toys are involved, it's just all natural amazing lesbian sex at its best, and you can tell the girls love to do what they do best. If you're a fan of lesbian sex I recommend this film to you.
Brilliant! 5 stars.


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Watseka, Illinois Pet Friendly Hotels & Lodging
United States » Illinois » Watseka
Looking for a hotel in Watseka, IL that you can bring your pet to? We made sure that each one of the hotels below are pet friendly, so you can enjoy your trip with your pet by your side! Once you have found a pet friendly hotel, you can book your stay instantly from our website or call 866-212-1803 to speak with a pet travel agent.
Browse Pet Friendly Hotels In Watseka, Illinois
Rates from
710 West Walnut Street - Watseka, IL (Map)
When you stay at Super 8 Motel - Watseka in Watseka, you'll be minutes from Iroquois County Old Courthouse Museum.Rooms Make yourself at home in one of the guestrooms featuring mic...
Overview | Pet Policy | Map


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Will China Rule the Waves
Eric Margolis | Posted 08.13.2011 | World
Read More: Indian Ocean, Indian-Navy-Movement-Towards-Pak, China Aircraft Carrier, China Oil Supply Lines, Port of Gwadar, Burma, World News
Judging from all the alarms coming from Washington's national security establishment, revelation of China's first aircraft carrier poses a major threat to world peace and stability. It does not, but the timing is noteworthy.
As Washington's paralysis deepens and Afghanistan slips further into chaos, the U.S. faces a crisis of credibility. A Chinese challenge to the war's legitimacy is of no minor consequence.


text:
The Voice
Pitbull Comments on Christina Aguilera's Weight: "She Looks Great!" (VIDEO)
Plenty of rappers make headlines for starting celebrity brawls, but Pitbull just wants to make sure "y'all havin' a good time." At the 2012 American Music Awards on Nov. 18, the rapper took to the stage to pump up the crowd and to keep the party going.
He was joined onstage by none other than the fabulous Christina Aguilera following her show-stopping AMA performance. Christina's performance and red carpet look from that night have been in the tabloids for weeks as critics continue to discuss her weight. But Pitbull has a message for the haters.
"She looks great!" he said during a radio interview with 92.3 NOW/New York. "I guess when people see her on television, you know, television can put on 10 to 12 pounds, easy. But to me, it's not about what she looks like. Everybody's so caught up on criticizing. No one's positive anymore. Everything's negative about people. I think it's all about being happy. And I think there's two words you can't define: normal and happy."
Well said, Mr. Worldwide.
We love Pitbull's words of inspiration! What about you? Weigh in below!
Source: 92.3 NOW/New York
Wanna chat with fellow fans of The Voice? Join the discussion on our The Voice Facebook page!
Follow @VoiceWetpaint on Twitter
More About The Voice
The Voice News
The Voice Performances
Christina Aguilera
Adam Levine


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42 year old woman | Mableton, GA, USA | Seeking men 37-45 within 50 miles
Active within 24 hours
Lets see what happens..........
I am a fiercely independent woman. I love dancing, long baths and reading, watching movies, working out, trips to the beach (which I do not get to do nearly enough), spending time with my kids, drinks on the deck in nice weather and basically just being out with friends. I love doing anything outdoors - camping, rafting, deep sea fishing, hanging out at the beach, whatever, I just like being outside- in the NICE weather. I don't mind cold weather activities but would prefer beach stuff like horse back riding, four wheeling and snorkeling. I love to cook and I am pretty good at it. My son and daughter are the most important things in the world to me and they come first.. My son is 8 years old and my daughter is 5 going on 16. She is a LOT like her mommy and really independent and outgoing. She is going to be my payback for being the wild child. I am the middle girl of three girls and the only one to get in trouble, sneak out.... basically the black sheep of the three girls. But at least now I can say I am the only one that has worked hard for the things she owns. (again independent). I am really outgoing and have a sense of humor, I am respectful, loyal, hard working, supportive, and I have a big heart. I love my friends and spending time with them. I would do anything for the people I care about. Family means the world to me. My sister is one of my best friends and I can always count on her to pick me up or make me laugh when needed. I believe in the old fashioned way of dating. I guess I am a romantic at heart. Who I am looking for.... I would really just like to find a nice, mature, funny person to spend some time with. :-) Fifteen years ago, you couldn't tell me I would be ok with being single with two kids, but I am. I am totally content and happy with my two beautiful kids but wouldn't be opposed to finding a good man to spend some time with.
Book club , Camping , Cooking , Dining out , Music and concerts , Exploring new areas , Nightclubs/Dancing , Travel/Sightseeing , Watching sports , Wine tasting
Auto racing / Motorcross, Baseball, Bowling, Dancing, Football, Hockey, Swimming, Walking / Hiking
I do have two cats but they drive me nuts. They are old and once they go- no more. Sorry, that sounds insensitive but with two messy kids I have enough to clean without worrying about them.
Middle of the Road
Cabo, well basically anywhere with a beach
Movies, sporting games, hiking, beach, reading, I am pretty easily entertained
I read all the time (when I actually HAVE extra time). I love murder mysteries. Hate romantic novels. I am really more of a fiction girl -love the escape books bring me.
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What she is looking for
|5'7" (170cms)
|6'0" (182cms) to 8'11" (271cms)
|Body type:
|About average
|About average
|No preference
|No preference
|No Way
|No Way, Yes, but trying to quit
|Social Drinker
|Social Drinker
|Other profession
|No preference
|I'll tell you later
|No preference
|No preference
|Have kids:
|Yes, and they live at home (2)
|No preference
|Wants kids:
|Not sure
|No preference
|White / Caucasian
|White / Caucasian
|Christian / Other
|No preference
|Some college
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text:
In order to reduce the integrated circuit area that is occupied by an array of a given number of flash memory cells, floating gate charge storage elements are positioned along sidewalls of substrate trenches, preferably being formed of doped polysilicon spacers. An array of dual floating gate memory cells includes cells with this structure, as an example. A NAND array of memory cells is another example of an application of this cell structure. The memory cell and array structures have wide application to various specific NOR and NAND memory cell array architectures.
1. A method of making an array of non-volatile memory cells on a semiconductor substrate, comprising:
forming a first set of trenches in a surface of the substrate that are spaced apart in a first direction and elongated in a second direction across the substrate surface, the first and second directions being orthogonal with each other,
forming source and drain regions in at least bottom surfaces of the first set of trenches along their lengths,
isotropically depositing first material over and into the first set of trenches,
anisotropically removing the deposited first material in a manner to leave spacers along opposite side walls of the first set of trenches with spaces therebetween in the first direction, wherein the spacers become charge storage elements of the array of memory cells, and
forming conductive first control gates that extend in the second direction in the spaces in the first set of trenches between the spacers and conductive first control gate lines that extend in the second direction over the first control gates to which they are electrically connected.
2. The method of
3. The method of
4. The method of
prior to depositing the first material, forming a second material between the trenches in at least the first direction,
thereafter depositing the first material over the second material and over and into the first set of trenches,
anisotropically removing the deposited first material in a manner to leave spacers along opposed side walls of the trenches and walls of the second material above the trenches, and
thereafter removing the deposited second material, thereby to leave the spacers extending a distance above the surface of the substrate.
5. The method of
forming conductive second control gates in spaces between the trenches in the first direction along with second control gate lines that extend in the first direction over second control gates to which they are electrically connected, the second control gates being formed to be field coupled with both the substrate surface between the trenches in the first direction and the charge storage elements extending a distance above the surface of the substrate.
6. The method of
7. The method of
8. The method of
9. The method of
10. A method of making an array of non-volatile memory cells on a semiconductor substrate, comprising:
forming trenches into a surface of the substrate that are spaced apart in a first direction and elongated in a second direction across the substrate surface, the first and second directions being orthogonal with each other,
forming source and drain regions in at least bottom surfaces of the trenches along their lengths,
depositing first polysilicon material across the substrate and into the first set of trenches,
anisotropically removing the deposited first polysilicon material in a manner to leave conductive spacers along opposite side walls of the trenches with spaces therebetween in the first direction,
forming control gates in the spaces between the spacers,
separating the spacers into floating gates, and
forming select gates over the substrate surface in between the trenches in the first direction and connecting them to word lines elongated in the first direction and spaced apart in the second direction.
11. A method of making an array of non-volatile memory cells on a semiconductor substrate, comprising:
forming a first set of trenches into a surface of the substrate that are spaced apart in a first direction and elongated in a second direction across the substrate surface, the first and second directions being orthogonal with each other,
forming source and drain regions in at least bottom surfaces of the first set of trenches along their lengths,
depositing first polysilicon material across the substrate and into the first set of trenches,
anisotropically removing the deposited first polysilicon material in a manner to leave regions within the first set of trenches along opposite side walls that do not extend outside of the trenches in the first direction but which leave spaces between the polysilicon regions in the first direction,
forming second polysilicon material in the spaces within the first set of trenches,
forming a second set of trenches into the substrate surface and first and second polysilicon material that are elongated in the first direction and spaced apart in the second direction, a depth of the second set of trenches being substantially equal to a depth of the first set of trenches, thereby to separate the side wall regions of the first polysilicon into individual floating gates,
forming conductive material in the second set of trenches between the floating gates in the second direction,
forming strips of conductive material elongated in the second direction and spaced apart in the first direction to pass over and contact the second polysilicon material in the first set of trenches and the conductive material in the second set of trenches, and
forming select gates over the substrate surface in between the first set of trenches in the first direction and connecting them to word lines elongated in the first direction and spaced apart in the second direction.
This application is related to an application Ser. No. 11/533,313, filed on Sep. 19, 2006, by Nima Mokhlesi, entitled "Array on Non-volatile Memory Cells With Floating Gates formed of Spacers in Substrate Trenches," now publication no. 2008/0067572 A1, which application is incorporated herein in its entirety by this reference.
This invention relates generally to non-volatile flash memory systems, and, more specifically, to a structure and process of forming arrays of memory cells that utilize substrate trenches to reduce the overall size of the arrays.
There are many commercially successful non-volatile memory products being used today, particularly in the form of small form factor cards, which use an array of flash EEPROM (Electrically Erasable and Programmable Read Only Memory) cells. Arrays with either a NOR or a NAND architecture are commonly used. One or more integrated circuit chips containing a memory cell array are commonly combined with a controller chip to form a complete memory system. Alternatively, part or all of the controller function may be implemented on the same chip that contains all or part of the memory cell array.
In one type of NOR array, each memory cell has a "split-channel" between source and drain diffusions. The floating gate of the cell is positioned over one portion of the channel and the word line (also referred to as a control gate) is positioned over the other channel portion as well as over the floating gate. This effectively forms a cell with two transistors in series, one (the memory transistor) with a combination of the amount of charge on the floating gate and the voltage on the word line controlling the amount of current that can flow through its portion of the channel, and the other (the select transistor) having the word line alone serving as its gate. The word line extends over a row of floating gates. Examples of such cells, their uses in memory systems and methods of manufacturing them are given in U.S. Pat. Nos. 5,070,032, 5,095,344, 5,315,541, 5,343,063, and 5,661,053, and 6,281,075.
A modification of this split-channel flash EEPROM cell adds a steering gate positioned between the floating gate and the word line. Each steering gate of an array extends over one column of floating gates, perpendicular to the word lines. The effect is to relieve the word line from having to perform two functions at the same time when reading or programming a selected cell. Those two functions are (1) to serve as a gate of a select transistor, thus requiring a proper voltage to turn the select transistor on and off, and (2) to drive the voltage of the floating gate to a desired level through an electric field (capacitive) coupling between the word line and the floating gate. It is often difficult to perform both of these functions in an optimum manner with a single voltage. With the addition of the steering gate, the word line need only perform function (1), while the added steering gate performs function (2). The use of steering gates in a flash EEPROM array is described, for example, in U.S. Pat. Nos. 5,313,421 and 6,222,762.
In one specific type of memory cell that efficiently utilizes integrated circuit area, two floating gates are included, each of which may be operated in binary (one bit per floating gate) or with multiple programming states (more than one bit per floating gate). The two floating gates are positioned over the substrate channel between source and drain diffusions with a select transistor in between them. A steering gate is included along each column of floating gates and a word line is provided thereover along each row of floating gates. When accessing a given floating gate for reading or programming, the steering gate over the other floating gate of the cell containing the floating gate of interest is raised sufficiently high to turn on the channel under the other floating gate no matter what charge level exists on it. This effectively eliminates the other floating gate as a factor in reading or programming the floating gate of interest in the same memory cell. For example, the amount of current flowing through the cell, which can be used to read its state, is then a function of the amount of charge on the floating gate of interest but not of the other floating gate in the same cell.
Examples of an array with dual floating gate memory cells, and operating techniques therefore, are described in U.S. Pat. Nos. 5,712,180, 6,103,573 and 6,151,248. The dual floating gate memory cell arrays are usually formed entirely on a surface of a semiconductor substrate. However, U.S. Pat. No. 6,151,248 additionally describes, primarily with respect to
The NAND array utilizes series strings of more than two memory cells, such as 16 or 32, connected along with one or more select transistors between individual bit lines and a reference potential to form columns of cells. Word lines extend across cells in a row direction, across a large number of these columns. An individual cell within a column is read and verified during programming by causing the remaining cells in the string to be turned on hard so that the current flowing through a string is dependent upon the level of charge stored in the addressed cell. Examples of NAND architecture arrays and their operation as part of a memory system are found in U.S. Pat. Nos. 5,570,315, 5,774,397, 6,046,935, 6,522,580, 6,888,755 and 6,925,007.
There are various programming techniques for causing electrons to travel through the gate dielectric from the substrate onto the floating gate. The most common programming mechanisms are described in a book edited by Brown and Brewer, "Nonvolatile Semiconductor Memory Technology," IEEE Press, section 1.2, pages 9-25 (1998). One technique, termed "Fowler-Nordheim tunneling" (section 1.2.1), causes electrons to tunnel through the floating gate dielectric under the influence of a high field that is established thereacross by a voltage difference between the control gate and the substrate channel. Another technique, channel hot electron injection in the drain region, commonly referred to as "hot-electron injection" (section 1.2.3), injects electrons from the cell's channel into a region of the floating gate adjacent the cell's drain. Yet another technique, termed "source side injection" (section 1.2.4), controls the substrate surface electrical potential along the length of the memory cell channel in a manner to create conditions for electron injection in a region of the channel away from the drain. Source side injection is also described in an article by Kamiya et al., "EPROM Cell with High Gate Injection Efficiency," IEDM Technical Digest, 1982, pages 741-744, and in U.S. Pat. Nos. 4,622,656 and 5,313,421. In a further programming technique, termed "ballistic injection" high fields are generated within a short channel to accelerate electrons directly onto the charge storage element, as described by Ogura et al., "Low Voltage, Low Current, High Speed Program Step Split Gate Cell with Ballistic Direct Injection for EEPROM/Flash", IEDM 1998, pages 987-990."
One of two techniques for removing charge from floating gate charge storage elements to erase memory cells are primarily used in both of the two types of memory cell arrays described above. One is to erase to the substrate by applying appropriate voltages to the source, drain, substrate and other gate(s) that cause electrons to tunnel through a portion of a dielectric layer between the floating gate and the substrate.
The other erase technique transfers electrons from the floating gate to another gate through a tunnel dielectric layer positioned between them. In the first type of cell described above, a third gate is provided for that purpose. In the second type of cell described above, which already has three gates because of the use of a steering gate, the floating gate is erased to the word line, without the necessity to add a fourth gate. Although this later technique adds back a second function to be performed by the word line, these functions are performed at different times, thus avoiding the necessity of making compromises to accommodate the two functions. When either of these erase techniques is utilized, a large number of memory cells are grouped together into blocks of a minimum number of cells that are simultaneously erased, in a "flash." In one approach, the individual blocks include enough memory cells to store the amount of user data stored in a disk sector, namely 512 bytes, plus some overhead data. Erasure of a number of blocks at once, defect management and other flash EEPROM system features are described in U.S. Pat. No. 5,297,148. In another approach, each group contains enough cells to hold several thousand bytes of user data, equal to 8, 16 or more host sectors' worth of data that are individually programmable and readable. Examples of operating such a large block memory are given in U.S. Pat. No. 6,968,421.
In place of electrically conductive floating gates, some flash memories utilize a non-conductive dielectric material that traps electrons. In either case, an individual memory cell includes one or more charge storage elements. Examples of the use of dielectric are described in aforementioned U.S. Pat. No. 6,925,007 and documents referenced therein. In the case of a dielectric trapped charge memory cell, two or more charge storage elements may be formed as two or more regions of a single continuous layer of dielectric that are spaced apart thereacross. One example of a suitable charge storage dielectric material is a three-layer oxide-nitride-oxide (ONO) composite. Another example is a single layer of silicon rich silicon dioxide material. As in almost all integrated circuit applications, the pressure to shrink the silicon substrate area required to implement some integrated circuit function also exists with flash EEPROM systems. It is continually desired to increase the amount of digital data that can be stored in a given area of a silicon substrate, in order to increase the storage capacity of a given size memory card and other types of packages, or to both increase capacity and decrease size. Another way to increase the storage density of data is to store more than one bit of data per memory cell. This is accomplished by dividing a window of a memory cell threshold voltage range into more than two states. The use of four such states allows each charge storage element to store two bits of data, eight states stores three bits of data per charge storage element, and so on. A multiple state flash EEPROM structure and operation is described in U.S. Pat. Nos. 5,043,940 and 5,172,338, as examples.
An array of floating gate charge storage element memory cells is formed with the use of trenches or cavities in which the floating gates are positioned along sidewalls thereof, having a gate dielectric therebetween, and without overlying the substrate surface adjacent the trenches. That is, the floating gates remain within the area of the trenches in plan view. This is preferably accomplished by utilizing spacers as the floating gates, wherein a layer of floating gate material, such as conductively doped polysilicon, is isotropically deposited over the array and into the trenches, followed by anisotropically etching away all of the deposited floating gate material except for spacers that remain along the trench sidewalls. Conductive control gates can then be formed in the trenches between the floating gate spacers, and/or select transistors can be positioned in substrate surface areas adjacent the trenches, depending upon the exact configuration desired for the memory cells.
An overall advantage of this structure is its efficient use of substrate surface area. A significant portion of the length of the memory cell channel is vertically oriented along the trench walls, thus reducing the amount of substrate surface area required for each memory cell. Source and drain regions may be implanted into the bottoms of the trenches between the floating gates therein. This floating gate structure and method of forming floating gates may be used in a wide variety of types of flash memory arrays. If used to form a NOR array of dual floating gate memory cells, for example, each such cell is formed from two floating gates along sidewalls of adjacent trenches and a select transistor formed therebetween in the substrate surface. If used to form a NAND array, the series strings of memory cell transistors are formed along the trench sidewalls with connecting diffusions in the bottoms of the trenches between the floating gates therein and along the substrate surface between adjacent trenches.
One specific advantage of this positioning of floating gates along the walls of substrate trenches is that, in memory architectures where appropriate, the floating gates may be programmed by ballistic injection with increased efficiency. That is, electrons may be accelerated along the lengths of the substrate channels between trenches and parallel to the substrate surface onto the floating gates in a direct line path, impinging at a normal or near normal angle to an interface between the substrate trench sidewall and the tunnel dielectric sandwiched between the floating gate and the sidewall. Therefore, it is not necessary that the electrons be redirected by a scattering mechanism, which scattering occurs during use of the more usual source side injection and hot-electron injection programming mechanisms. By avoiding wrapping the floating gates out of the trenches and along the substrate surface, and by applying a voltage to the select gate that is slightly higher than the select gate's VT, a high lateral electric field is created which accelerates the channel electrons to kinetic energies sufficient to overcome the tunnel oxide barrier. Many of these hot electrons will impinge on the tunnel oxide without having to be first scattered in order to re-direct their momentum. The high voltage on the floating gate may also help accelerate the electrons along a path to the floating gate as they traverse the channel region. The walls of the trenches along which the floating gates are formed may be perpendicular to the substrate surface, which is optimum for efficient programming by ballistic injection and allows the size of the memory cell to be minimized, but this is not a requirement. Substrate trenches with perpendicular sidewalls are conveniently formed by anisotropically etching into the substrate surface.
Rather than forming floating gates as the memory cell charge storage elements, a dielectric charge trapping material may be substituted. The middle nitride layer of ONO, for example, can be deposited by use of the same spacer techniques. Uniform thickness layers of oxide are formed in a manner to be on either side of the nitride spacer to provide the ONO structure. Alternatively, spacers of silicon rich silicon dioxide can be formed in the same manner as the conductive floating gates, and the dielectric layers provided on either side of the floating gates need not be formed on such dielectric spacers.
Additional aspects, advantages, embodiments and features of the present invention are included in the following description of exemplary examples thereof, whose description should be taken in conjunction with the accompanying drawings.
All patents, patent applications, articles, book portion, other publications, documents and things referenced herein are hereby incorporated herein by this reference in their entirety for all purposes. To the extent of any inconsistency or conflict in the definition or use of terms between any of the incorporated publications, documents or things and the present application text, those of the present application text shall prevail.
An example memory system incorporating the various aspects of the present invention is generally illustrated in the block diagram of
The controller 27 is connectable through lines 35 to a host device (not shown). The host may be a personal computer, notebook computer, digital camera, audio player, various other hand held electronic devices, and the like. The memory system of
The decoder and driver circuits 13, 19 and 21 generate appropriate voltages in their respective lines of the array 11, as addressed over the bus 25, according to control signals in respective control and status lines 29, 31 and 33, to execute programming, reading and erasing functions. Any status signals, including voltage levels and other array parameters, are provided by the array 11 to the controller 27 over the same control and status lines 29, 31 and 33. A plurality of sense amplifiers within the circuit 13 receive current or voltage levels that are indicative of the states of addressed memory cells within the array 11, and provides the controller 27 with information about those states over lines 41 during a read operation. A large number of sense amplifiers are usually used in order to be able to read the states of a large number of memory cells in parallel. During reading and program operations, one row of cells is typically addressed at a time through the circuits 19 for accessing a number of cells in the addressed row that are selected by the circuits 13 and 21. During an erase operation, all cells in each of many rows are typically addressed together as a block for simultaneous erasure.
The bit line decoder and driver circuit 13 is connected through lines 15 with global bit lines, which are in turn selectively connected with the source and drain regions of the array. The sources and drains of columns of individual memory cells are connected to proper programming voltages for either reading or programming in response to addresses supplied over the bus 25 and control signals over the lines 19.
The steering line decoder and driver circuit 21 connects though lines 23 to the steering gates and is able to individually select steering lines and control their voltages in response to addresses provided on the bus 25, control signals in the lines 33, and data from the drivers and sense amplifiers 13.
The select gate decoder and driver circuit 19 is connected with the word lines in order to individually select one row of the cell array. Individual cells within a selected row are then enabled for reading or writing by the bit line and steering gate decoder and driver circuits 13 and 21.
Operation of a memory system such as illustrated in
Exemplary Embodiment of a Dual Floating Gate Memory Cell Array
The structure of an example NOR memory array formed on a single integrated circuit chip with the floating gates formed by a spacer technique is illustrated in
The components formed in the trenches 51-66 are illustrated in
The gates 103, 105 and 109, the dielectric layer 101 along the sidewalls and the intermediate dielectric layer 107 together fill the trench 61 in the x-direction. A buried N+ diffusion 110 is elongated in the y-direction and positioned under trenches 53, 57, 61 and 65, providing source and drain regions for the memory cells of which they are a part. The remaining trenches include the same structure and form. As identification for use below, the neighboring trench 60 includes floating gates 111 and 113, a steering gate 115 and dielectric layers positioned in the same manner as in the trench 61. A buried diffusion 117 exists under the trench 60 and other trenches in the same column.
The floating gates are preferably formed by depositing polysilicon material over the entire memory cell array being formed including within the trenches, and then anisotropically etching that layer until the spacers, such as floating gate spacers 103 and 105, remain within the trenches. A chemical-mechanical-polishing (CMP) step may be performed to remove any portion of the floating gate spacer material that may remain on the substrate surface 49. In this embodiment, the resulting floating gates are positioned entirely within their respective trenches, below the substrate surface 49. The steering gates 109 and 115 are also conveniently positioned entirely within their trenches below the substrate surface 49.
Conductive control gate lines are positioned across the trenches, over the substrate surface 49. The steering gate lines 75-78 extend across the trenches in the y-direction, making contact with the steering gates in the trenches and conductive shields between the trenches. The line 77, for example, extends across and electrically contacts the steering gate 109 and the other steering gates in that column, as well as contacting the intermediate conductive shields 83, 87 and 91. An isolating layer of dielectric (not shown) will be positioned between the steering gate lines and any portions of the substrate surface 49 that are crossed by those lines. Dielectric material surrounds the steering gate lines. The line 77, for example, has two dielectric layers 121 and 123 positioned on its top surface and coextensive with that surface. The layer 121 is preferably made of silicon dioxide and the layer 123 of silicon nitride. Spacers 125 and 127 are formed along the sidewalls in the x-direction of the conductive line 77 and dielectric strips 121 and 123 on top of the line 77.
The word lines 69-72 are positioned across the dielectric enclosed steering gate lines, perpendicular thereto. Because of the thicknesses of the intermediate dielectric, there is little or no coupling between the word and steering gate lines. The word lines are further separated from the substrate surface between the trenches in the x-direction by a layer 129 of gate dielectric, preferably silicon dioxide. Regions of the word lines adjacent the gate dielectric 129 form select gates of the memory cells. Channel regions of select transistors exist in the substrate surface 49 on opposite sides of the gate dielectric layers 129 between trenches.
The shields are surrounded by dielectric, such as layers 131 and 132 along sidewalls of the shield 91 that separate it from edges of the floating gates on either side in the y-direction and a layer 133 between a bottom surface of the shield 91 and the substrate surface 49. The bottom layer 133 is made relatively thick to minimize coupling between the shield 91 and the substrate surface 49. The side layers 131 and 132, on the other hand, are made relatively thin to maximize coupling between the shield 91 and edges of the floating gates on either side of the shield. Since the shield 91 is electrically connected with the steering gate line 77, this provides an increased area of coupling between each steering gate and the floating gates in the same column as the steering gate. Memory cells with an increased coupling ratio couple a larger percentage of the voltage placed on a steering gate to a floating gate with which it is capacitively coupled. At the same time, coupling between the floating gates and the buried bit line diffusions can be kept small, as can be seen from
One specific example configuration for array of
The example structure of
As indicated in
The preferred programming mechanism for the memory cells shown in
There are several possibilities for removing charge from the floating gates to erase the memory cells, three of which are mentioned here. One is to cause electrons to tunnel through the select gate dielectric 129 from the relatively sharp top edge of the floating gate to the adjacent word line 71. A high erase voltage is placed on the word line for this. Alternatively, a floating gate may be erased to its vertical channel portion through the floating dielectric layer along a vertical face of the trench. For this, a voltage in the range of zero to −0.5 volts is applied to the bit line (alternatively the bit line can be allowed to float to prevent the possibility of also erasing to the bit line), zero volts is applied to the substrate and up to −20 volts is applied on the steering gate. Another possibility is to erase between the bottom of a floating gate and a buried diffusion bit line under the bottom of the trench, through the floating gate dielectric layer on the bottom of the trench. Example voltages include 5 volts on the bit line, 0 volts on the substrate and up to −15 volts on the steering gate. This last alternative has an advantage of not erasing through either of the floating gate or select gate dielectric layers, thus avoiding trapping charge in these layers over time from many erase operations that will usually affect programming and reading.
It will be noted that the memory cell array of
Process of Making the Dual Floating Gate Memory Cell Array
One set of process steps (recipe) for making the memory cell array of
A negative ion gradient with increasing depth may be installed near the substrate surface, which is beneficial for enhancing generation of hot electrons used during programming. Further, control of the doping level at the corners of the channels, where gaps exist between the select gates and the floating gates, can result in the gaps not dominating behavior of the memory cell.
After the implants, a thin silicon oxide layer is grown over the region of the surface of the substrate where the array is being formed. This serves as a buffer for a layer of silicon nitride that is next deposited over the oxide layer. The nitride layer is then masked and etched into a pattern of strips having lengths extending in the y-direction, preferably with a minimum width and spacing between them in the x-direction as is possible with the lithography and other aspects of the particular process being used. Areas of the substrate surface and thin oxide layer between the nitride strips are then anisotropically etched away with the nitride strips serving as a mask. Trenches with substantially vertical walls are formed in the substrate by this etching step to a depth slightly greater than the desired floating gate vertical channel length T1. Each column of the trenches 51-66 (
A thick layer of oxide is then isotropically deposited over the entire region of the array over the nitride strips and into the trenches. This oxide layer is then anisotropically etched to leave oxide spacers along the common sidewalls of the trenches and nitride strips. The thickness of the deposited oxide layer and the etching are chosen to leave a narrow space between the spacers in the x-direction. These spacers and nitride strips are then used as an implant mask. Buried N+ implants, using arsenic for example, of various energies are made into the bottoms of the trenches through this mask between the spacers. The bit line diffusions are thus formed as strips extending along the bottoms of the trenches in the y-direction. The implanted ions later diffuse outward in the x-direction as a result of further processing steps at elevated temperatures, forming the bit line diffusions 110, 117 et al. shown in
The oxide spacers, nitride strips and oxide under them are then all etched away. An oxide layer is then grown over the entire memory array area to a thickness of 8 nm to 10 nm, following the stepped contour of the substrate surface. The portions of this layer within the trenches eventually become the oxide layer 101 of
An ONO layer is then formed over the array area, the portions over the polysilicon spacer strips that remain as floating gates forming the inter-poly dielectric layer 107 of
A second layer of polysilicon (Poly2) is isotropically deposed over the array area to a thickness sufficient to completely fill the trenches between the ONO coated strips of Poly1. A CMP step is then performed to remove all material down to the substrate surface. This leaves strips of Poly2 extending in the y-direction, which, when later separated, form the steering gates 109, 115 et al. of
The next several steps form a nitride mask and use that mask to etch the Poly 1 and Poly 2 strips, the dielectric layers surrounding them and the substrate in strips having lengths extending in the x-direction. The depth of the resulting x-direction trenches is preferably the same as the earlier floating gate trenches etch. A non-preferential etch is preferred so that each of Poly1, Poly2, oxide layer, ONO layer and silicon substrate are etched at about the same rate. It is in these trenches that the shielding elements 51-66 (
Next, a dielectric layer is formed over the array area, such as by both growing an oxide layer and isotropically depositing oxide to result in the dielectric layers 131, 132 and 133 (
Indeed, a next series of steps performs this separation. It is preferable that the lengths of the resulting shields in the x-direction be greater than the widths of the adjacent trenches 51-66, as is the case in the plan view of
A next series of steps forms the steering gate lines 75-78. A fourth layer of polysilicon (Poly4) is deposited over the area of the array. An etch mask is then formed over the Poly4 layer in the form of strips extending in the y-direction to cover portions of the layer that are to remain and become lines 75-78. Since this mask is not aligned with other elements previously formed, it is desirable to make the widths of the remaining Poly4 strips narrower than the line width of the process. Some degree of misalignment in the x-direction can then be tolerated.
These narrow mask openings may be obtained by first forming an oxide mask over the Poly4 layer with strips having widths and spaces between them in the x-direction equal to the minimum line width of the process being used. Spacers of oxide material are then formed along the edges of the openings to narrow them. A nitride layer is then deposited over the oxide material and onto the Poly4 layer through the narrowed openings between the oxide spacers. This structure is then subjected to CMP down to the oxide material, thereby leaving nitride strips extending in the y-direction with widths of the desired steering gate lines. The oxide material between the nitride strips is then removed by a selective etch. The Poly4 layer is then anisotropically etched through the resulting nitride mask to remove material from the Poly4 layer except where the nitride strips exist. The result is the steering gate lines 75-78.
The nitride masking strips are preferably left in place on the Poly4 strips, as shown in
Next, a layer of oxide is grown, deposited or both, in order to form the select gate dielectric layer 129 (
Further steps (not shown) include forming a first set of metal lines separated by dielectric layers that are periodically connected to the polysilicon steering gate lines 75-78 along their lengths, and a second set of metal lines connected along the lengths of the word lines 69-72, according to standard processing technology.
Alternative Embodiments of a Dual Floating Gate Memory Cell Array
There are many modifications that may be made to the architecture and process described above that retain their advantages and provide others. One modification is to make the trenches in the substrate shallower than shown in
A primary advantage of the embodiment of
Another advantage of the
Further, increased coupling between the word line and the floating gates in its row allows the word line to be driven with an alternating current (AC) signal during read and verify operations of in its row in order to reduce noise. This technique is described in U.S. Pat. No. 6,850,441.
It will be noted from
The modified array of
Since the nitride mask strips remain after the floating gate spacers are formed, the buried bit line diffusions may be implanted at this time, using the nitride strips and floating gates as an implant mask. Since the floating gates narrow the width of the trenches through which ions are implanted, the oxide spacers formed in the above description of the
If it is desired to have the steering to floating gate coupling ratio increased but maintain a word line (select gate) to floating gate coupling ratio low, the word line and its select gate structure shown in
Referring first to
Although the embodiments of
Embodiment of a NAND Memory Cell Array
The use of the above-described spacer techniques to form floating gates in trenches can also be used to form arrays of memory cells with a NAND architecture. One NAND embodiment is shown in
After dielectric layers are formed on exposed surfaces of the floating gates 171-178 and on the substrate surfaces 159 between trenches, word line control gates are formed to extend across the array in a direction perpendicular to that of the memory cell string. Indeed, the array is made up of a large number of such strings in parallel columns with the word lines extending across the strings along rows of memory cells. Since there is a separate word line crossing each floating gate, two such word lines need to be formed in each of the trenches 163, 165, 167 and 169, rather than the single steering gate of the earlier described embodiments.
Therefore, the word lines are formed from two layers of polysilicon that are deposited and etched in sequence. A first word line layer of polysilicon (Poly2) covers the entire array including extending into the trenches between the floating gates. A mask formed over the Poly2 layer allows its removal in a pattern that leaves a first set of word lines 191-194, every other word line along the memory cell string. After exposed surfaces of these word lines are covered with a dielectric, the next layer of polysilicon (Poly3) is deposited over the array including into the remaining space of the trenches. The Poly3 layer is then masked and etched to leave a second set of word lines 197-201 that are the remaining word lines of the array. Because the word lines are not self-aligned with other components of the strings and the trenches each contain four layers of polysilicon and five layers of dielectric, the size of the trenches in a direction along the string may in some cases need to be larger than the smallest resolution element of the process being used.
An electrical equivalent circuit of the NAND memory cell string of
Although the various aspects of the present invention have been described with respect to exemplary embodiments thereof, it will be understood that the present invention is entitled to protection within the full scope of the appended claims.
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GQF Manufacturing Chick-Bator Egg Incubator w/ 4 Quail Eggs 9105$30.97Clear plastic dome Chick-Bator with 4 Quail Eggs (available year round) and Egg Hatchers Guide Book Complete - nothing else to buy. GQF Manufacturing Chick-Bator Incubator w/ 4 Quail Eggs 110V 9105 Learn More
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Nutrena Empower Boost Equine Supplement 40lb$31.99Product Features
- An extruded combination of high-fat rice bran and flaxseed for an improved blend of omega-6 and omega-3 fatty acids.
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Begin feeding at a rate of 0.5 lbs. (0.23 kg) per head per day with good quality forage or feed. Increase gradually over a 2-week period to recommended levelsLearn More
Weaver Leather Harness Leather Browband Headstall 10-0347$31.97
On-trend, wheat-colored stitching is the perfect accent to this 5/8" golden brown harness leather headstall. This headstall features a doubled and stitched browband, a single-ply throat latch and brown latigo leather ties at bit ends. Nickel plated hardware. Horse size.Learn More
Weaver Leather Doubled and Stitched Off Billet, Rich Brown, 1-3/4" x 39" 30-2005$31.97
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Merrick's Calf Milk Replacer Regular 25 lb$30.99
Instant Milk Replacer is a high quality, multi-purpose milk replacer for dairy and beef calves, baby pigs, foals and kids and as a nursing supplement for puppies and kittens. It is very palatable and easy to mix. The high quality ingredients provide superior digestibility to help meet the protein and energy needs for strong animal development. Instant Milk Replacer contains 20% protein and 15% fat for rapid animal growth with balanced levels of essential minerals and vitamins such as A, D and E for building strong sturdy frames. It can also be used as a dry feed supplement to encourage intake during weaning. Instant Milk Replacer provides a guaranteed level of direct-fed microbials. These lactic acid and enzyme-producing bacteria support the growth of beneficial bacteria in the small intestine and promote a healthy digestive tract. This milk replacer is medicated with 20g/ton of Neomycin Sulfate and 20g/ton Oxtetracyline Hydrochloride.Learn More
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Farm Innovators Bucket Heater W-449$31.98The Farm Innovators Bucket Heater is a submergible bucket heater and is designed to heat 5 gallons of water up to 110ºF.Product Features:
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This stainless steel gag bit features a 5" sweet iron snaffle mouth and 7-1/2" cheeks. Depending on the degree of slide on the gag, these bits aid in lifting the shoulders, allow more flex for turning and provide more control at a higher rate of speed, making them popular for barrel racing and other speed events. These bits should be used with a loose chain curb.
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46 year old woman | Fort Myers, FL, USA | Seeking men 42-49 within 50 miles
Cajun Lost in Florida
Like I said I am employed fulltime in a high demand job and the only parent to three kids. I am not going to say the kids are perfect, because they have their days just like adults do. I am not tolerant of liars. Just be who you are without trying to make yourself be someone you are not. I like sports, all kinds of sports as well as music and almost anything else. I am not perfect and will never say I am perfect- none of us are. I am honest, hardworking and love keeping a smile on my mate's face
Coffee and conversation , Cooking , Dining out , Movies/Videos , Museums and art , Music and concerts , Exploring new areas , Performing arts , Playing cards , Playing sports , Travel/Sightseeing , Watching sports , Wine tasting
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I exercise 3-4 times per week.
Don't display my sign
I have Dogs
Middle of the Road
in my free time I am usually at the ballpark with my kids or enjoying the beautiful scenery in Florida. I also enjoy wathing live sports and sports on TV as well as movies, The beach in the rain on a perfect evening is also fun
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
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|5'4" (162cms)
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Home / Promotional Products and Promotional Items / Golf Products / Golf Kits / Aluminum Divot Repair Tool
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A multi-functional golf repair tool that is a must have for any golfer. Includes a removable ball marker, knife, file, and club groove cleaner.


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Crews free entangled whale off California coast
Marine biologists managed to free a humpback whale that had become entangled with a steel rope attached to a 300-pound crab trap.
Marine biologists managed to free a humpback whale that had become entangled with a steel rope attached to a 300-pound crab trap.
Pinterest on Friday confirmed that another $200 million has been pumped into its coffers to build up search capabilities at the booming, bulletin board-style social network.
Google said Friday it could take weeks to devise a way to comply with a European Court of Justice ruling that it honor requests to be "forgotten."
Google on Friday confirmed it has bought a startup specializing in using smartphones to translate signs, billboards or other written words in real time.
April launches bring May research returns. While the splashdown of SpaceX's Dragon spacecraft on May 18 will conclude the company's third contracted resupply mission to the International Space Station, it ...
Researchers at The University of Akron are again spinning inspiration from spider silk—this time to create more efficient and stronger commercial and biomedical adhesives that could, for example, potentially ...
To quote the American cartoonist Gary Larson: all things play a role in nature, even the lowly worm—but perhaps never in such a visually stunning way as that presented in two papers published today in the ...
Facebook Camera, Poke and Square Wallet have been removed from app stores, bringing an end to three apps from notable tech companies that were never able to catch on.
The seven-year legal battle between business software rivals Oracle and SAP may have another round or two left.
If you just launched a company from your apartment last week and are looking for some cash, don't go to knocking on a venture capitalist's door.
For months, reports have said the next iPhone, or iPhones, will feature significantly larger screens than the one on the iPhone 5s. Now, a new report says they may also feature a significantly higher resolution.
Casting some doubt on a proposed $324 million settlement with four Silicon Valley powers, a lead plaintiff in a lawsuit alleging illegal hiring practices in the tech industry has urged a federal judge to reject the pact, ...
When it comes to smartphones, these days bigger seems to be better.
The smartwatch is an interesting form factor but a Carnegie Mellon team that is focused on interfaces noted its limitations and addressed the size challenge. Because the device is worn on the wrist, the sophistication ...
Multitaskers, rejoice: Apple is reportedly planning on adding a split-screen feature to the iPad that will allow the tablet to run two apps at the same time.


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Originally written on The Victory Formation | Last updated 2/13/13
Gronk is "Sorry for Partying". So sayeth the bright green and pink tank top he wore out for some pizza at Universal Studios in Orlando when a fan got a photo with him and posted to her Twitter account. You may remember that Gronk was filmed throwing down on stage just after the Super Bowl this year, despite recovering from a second surgery on a broken arm. That comes on the heels of last year's post-Super Bowl escapades, when Gronkowski needed surgery to repair damage to his ankle sustained in the AFC Championship game. As funny as this is, and as much as I like Gronk both as a player and as a person (or at least what I've seen of him through the media; I've never met the man), this smacks of another self-promoting NFL Star who took to not-so-subtle attempts to "apologize" for his outlandish behavior. Here's hoping Gronk's career has a different arc than Chad Johnson's did.
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The University of Vermont Honors College offers talented and committed students the intellectual opportunity of a lifetime.
A residential college enrolling some of the most capable students from the full spectrum of academic programs at the University of Vermont, the Honors College provides students a rigorous, multi-disciplinary academic challenge that complements and enriches the entire undergraduate experience.
Top Honors College News
Get to Know the Grads
This year, UVM will award its 100,000th bachelor's degree at commencement ceremonies taking place Sunday, May 17. Here's a sampling of some of the graduates who make up the milestone Class of 2015. Learn about their time at UVM, what's in store for their future and the advice they have for the incoming class.
Field Research in Mongolia Informs Senior's Thesis
Fly fishing in Mongolia for the world's largest trout species, Hucho taimen, may be a fly fisherman's dream, but for Frances Iannucci, a senior honors student in UVM's Rubenstein School of Environment and Natural Resources, it was all about serious research last summer. Mongolia's inland rivers, including the Eg-Uur, are ...
UVM Students' Research Supported by Beckman Scholars Program
Nationwide, there are only 61 undergraduates who are part of the prestigious Beckman Scholars Program. At the University of Vermont, there will soon be five.


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Scooby's Night with A Frozen FrightScooby's Night with A Frozen Fright (1970) Season 2 Episode 45-21- Scooby Doo, Where Are You! Cartoon Episode Guide
This page has been viewed 42 times this month, and 4581 times total.
- 1970
- Hanna-Barbera Studios
- Scooby Doo, Where Are You! Episode Guide
- Cartoon Characters: Scooby-Doo, Freddy Jones, Daphne Blake, Shaggy Rogers, Velma Dinkley, Professor Wayne, Professor Ingstrom, The Caveman.
- Vocal Talent: Don Messick (Scooby-Doo), Frank Welker (Freddy), Heather North (Daphne), Casey Kasem (Shaggy), Nichole Jaffe (Velma), Viz Perrin, Barry Richards, George A. Robertson, Hal Smith, John Stephenson, Swan Steward, Michael Stull, Jean Vander Pyl.
- Directed By William Hanna, Joseph Barbera.
Animation Director: Charles Nichols (as Charles A. Nichols).
- Produced By William Hanna, Joseph Barbera.
Associate Producer: Alex Lovy.
- Animated By George Rowley, Bill Keil, Ray Abrams, Isadore Ellis, Volus Jones, Carlos Alfonso, George Goepper, Dick Cundy.
- Written By Lar Bourne, Tom Dagenais, Bill Lutz.
Story Direction: Paul Sommer, Bob Singer, Howard Swift.
Story Editors: Joe Ruby, Ken Spears.
Additional Crew:
- Production Design: Iwao Takamoto, Victor O. Schipek.
- Layout: Bob Singer, Dick Bickenbach, Mike Arens, Gary Hoffman, Rick Gonzales, Terry Slade, Jack Huker, Mo Gullub, Alex Ignatier, Jim Fletcher, Mario Uribe.
- Background Styling: F. Montealegre.
- Backgrounds: Rene Garcia, Richard Khim, Bob Gentle, Peter Van Elk, Curtis Perkins, Gino Giudice, Gary Hiblet, Eric Smones.
- Titles: Richard Schaefer.
- Music Supervisor: La Productions.
- Technical Supervisor: Frank Paiker.
- Ink & Paint Supervisor: Roberta Greutent.
- Xerography: Robert "Tiger" West.
- Sounds Directions: Richard Olson, Bill Getty.
- Editorial Supervisor: Larry Cowan.
- Music Editor: Joe Sandusky.
- Effects Editing: Earl Bennet, Ron Sawade.
- Negative Consultant: William E. DeBoer.
- Post Production: Joe Eaton.
- Camera: George Epperson, Ralph Migliori, Roy Wade, Bill Kotler.
Credits Couresty of Scottish's Scooby-Doo Page
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Cartoon Summary:
Shaggy Rogers and Scooby-Doo hook a prehistoric caveman frozen in ice when the pro ghost chasers go fishing during a beach party. To unload their catch, the... (more)
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Chairmans Reserve Finest St Lucia Rum is a blend of double distilled pot still and column still rums. These are aged in once-used Bourbon barrels, and, after blending, it undergoes a further 6 to 9 months in barrel to allow the blend to marry. A favourite with leading West End bartenders, its quality has also earned it the accolade of Best in Class in 2008, 2009 and 2010 at the International Wine and Spirit Competition.
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- flowgomanic.wordpress.com - Review by Drinks Enthusiast, Manchester
(Posted on 23/09/2011)


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Manufacturing Area
Category: Electric Boiling Pot
electric kettle Model No.:7A3 Brand:OEM Quality Certificate:CCC Test standard:GB4706.1-1998;GB4706.19-2004 Voltage:220V Frequency:50HZ Power W:1350W Material:Plastic Caliber:mm Capacity:1. ...Keyword : electric kettle | stainless steel kettle | plastic kettle
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FireKing Key Operated Lock Gary Trim Safe
FireKing Key Operated Lock Gary Trim Safe
Weights & Dimensions
|Product Type: Depository safe
|Exterior Finish: Graphite
|Interior Finish: Graphite
|Material: Metal
|Hardware Material: Stainless steel
|Number of Items Included: 1
|Water Resistant: No
|Fire Resistant: No
|Impact Resistant: No
|Lock Type: Key
|Key Required: Yes
|Keypad Lock Included: Yes
|Finger Scan Lock Included: No
|Gun Safe: No
|Shelves Included: No
|Drawers Included: No
|Tray Included: No
|Bolt Down: Yes
|Batteries Required: No
|Interior Light: No
|Humidity Control: No
|Drop Box Included: Yes
|Portable: Yes
|Wheels: No
|Capacity: 0.2 Cubic Feet
|Commercial Use: No
|Country of Manufacture: Sweden
|Assembly Required: No
|Additional Parts Required: No
|Product Warranty: 1 year
|UL Listed: No
|GSA Approved: No
About the ManufacturerFKI Security Group has been committed to loss prevention since its beginning in 1951 as a manufacturer of high-quality FireKing fireproof files. After acquiring Meilink in 1991 and Gary Safe Company and NKL Industries in 1999, it evolved from records protection into a broad-based security company. Today, having added Image Vault™ (multifunction digital recorders) FireKing is fast becoming one of the premier security and loss prevention companies in the nation.
Every product they make, whether it carries the FireKing name or that of one of their subsidiaries, is manufactured using the latest available technology. So, whether you're looking for a simple fire safe to store overnight receipts or a computer-based intelligent safe to protect against employee theft, or anything in between, if it's from the FireKing family of products, you know it'll protect your company's assets. FireKing products have stood up to tornadoes, fires, falls and break-ins. And just as important, they've stood up to the test of time. No wonder FireKing works with America's foremost companies and their products are distributed in over 85 countries worldwide.
FireKing Key Operated Lock Gary Trim Safe
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OUR SKU # FK1192Key Operated Lock Gary Trim Safe is also sometimes listed under the following manufacturer numbers: MS1206