text:
WASHINGTON, D.C. ALUMNI RECEPTION Tuesday, February 4 6:00 p.m. to 7:30 p.m. Baker Botts L.L.P. The Warner 1299 Pennsylvania Avenue, N.W. Washington, D.C. 20004-2400
If you need an accommodation to participate in this event, please contact the sponsor listed above or the UT Law Special Events Office at firstname.lastname@example.com no later than seven business days prior to the event.


text:
TATG LLC, a Northern California Bookkeeping & Accounting
Implementation consulting firm, We understand that it's difficult to make confident decisions
without reliable financial information. While you focus on turning your vision
into reality, we'll work to make the accounting function easy and ensure that
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clients get personalized and responsive service from dedicated accounting
professionals who will help you manage your business and keep your finances on
track. We want you to feel confident that your accounting system accurately
reflects your current situation so you can concentrate on running your business
instead of trying to stay on top of your books.
QuickBooks is the number one accounting software used by Northern New Jersey
small businesses. TATG LLC, has
the skills and knowledge to install, setup, train, and support our QuickBooks
As Certified QuickBooks ProAdvisors, we can work with you to
ensure that you are getting the most out of your QuickBooks accounting software.
We understand the challenges you face and know that keeping accurate records
is vital to your business success. We can offer guidance on everything from
complex accounting questions to mastering advanced features of your QuickBooks
accounting software.
As part of our QuickBooks accounting services we review your bookkeeping on a
regular interval to ensure your accounts are accurate. Anytime you call with a
question or need advice for an important business decision, which you are always
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Our QuickBooks accounting services include:
Outsourced Accounting/Bookkeeping
In today's economy, company resources are stretched more than ever, and it's
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When you outsource accounting responsibilities to TATG LLC
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important financial issues.

subset: commoncrawl


text:
Several Colorado universities land a spot on Best Colleges rankingDenver Business Journal (9/9/2914)
Startups make pitch on a Fort Collins trolleyDenver Post (6/30/2015)
CSU veterinary professors build booming startupUSA Today College (6/29/2015)
Smithsonian Recognizes Fort Collins As A 'Place Of Invention'KUNC radio (6/29/2015)
CSU stadium moves slower than similar projectsColoradoan (6/28/2015)
Supreme Court rules on marriage equality, Colorado reactsCollegian (6/27/2015)
Colorado Garden to-do list: Check on trees and shrubsDenver Post (6/26/2015)
Colorado State football coaches learn new surroundingsLoveland Reporter-Herald (6/26/2015)
Colorado State University prof lives entrepreneurshipColoradoan (6/26/2015)
Inside The World's Largest Food Company You've Probably Never Heard OfKUNC radio (6/26/2015)
More CSU in the News
For Immediate ReleaseTuesday, February 12, 2008
Contact for Reporters:
Jennifer Dimas
FORT COLLINS - Dean Tsao, CEO of Genemed Biotechnologies, Inc., has pledged
$1 million to Colorado State University to support teaching and research in the Department of Biochemistry and Molecular Biology. Tsao earned his Ph.D. in biochemistry from Colorado State in 1973.
The pledge will fund graduate fellowships in honor of Emeritus Professor Parviz Azari in the Department of Biochemistry and Molecular Biology. Presidential Initiatives such as internships, Native American scholarships and presidential science education initiatives also will be funded.
"We are grateful to the Tsao family for their generous gift to Colorado State University," said Colorado State President Larry Edward Penley. "Dean has enjoyed tremendous success in his career after graduating from Colorado State, and we are very proud of all he has achieved throughout his distinguished career. This gift will help perpetuate the quality education Dean received here for the benefit of the next generation of scientists and scholars."
One half of the gift will go to support the establishment of a graduate fellowship named in honor of Azari and to enhance undergraduate research opportunities in CSU's biochemistry research laboratories. Azari, a CSU biochemistry professor for 39 years, was Tsao's adviser.
About 10 percent of the gift will be directed to the establishment of scholarships, including the Tsao Native American Scholarship that will support a worthy student from the Southwest Native American community to attend CSU. Also included is the Dean Tsao Presidential Internship program, the first named internship in the Presidential Internship Program.
The remaining 40 percent of Tsao's gift will support a Presidential Science Education Initiative that will provide small grants for education initiatives in science and mathematics. These initiatives include outreach programs such as Triunfo, which pairs CSU students with local K-12 students for one-on-one tutoring and a College of Natural Sciences program that is preparing licensed science teachers through curriculum development, and the annual Colorado Science and Engineering Fair.
"The College of Natural Sciences is extremely grateful for the generosity of the Tsao family," said Rick Miranda, dean of the College of Natural Sciences. "The support of our students and research capabilities will create a lasting positive impact, and our outreach efforts to better the science education of young students while strengthening the pipeline of science teachers will also be bolstered."
Since earning his Ph.D. from CSU in 1973, Tsao has established four biotechnical research and diagnostic companies that have together created thousands of products now used in the research and diagnosis of cancer, infectious diseases, Down Syndrome and other medical conditions. Originally from Taiwan, Tsao built an extensive background in teaching and advising throughout Taiwan and China before entering the biotechnology industry. He came to the United States in 1968 to begin the doctoral program at CSU.
Tsao, who has been honored with an American Heart Association post-doctoral fellowship, has advanced medical research through personal experience. In 2003, a lump was detected in his chest. After surgery, Zymed Laboratories, a leading immuno-pathology company founded in 1980 by Tsao that was later acquired by Invitrogen in 2005, created a rapid test for detecting cancerous cells in biopsied lymph nodes that cut analysis time from 60 minutes to 8 minutes.
"Dean was an excellent student, very creative, productive and an entrepreneur," Azari said. "He was instrumental in advancing protein chemistry and pushed the research in the right direction. Dean is a world traveler and established clinical trial research in Taiwan on liver and esophagus cancer which are very prevalent in Taiwan."
Tsao and his wife, Ping-Ping, reside in the San Francisco area. They have two daughters.


text:
The Petticoat Doctor - eBook
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Nothing in Abbie's life ever prepared her for the West! When Doctor Abigail Hayes decided to join her long-lost brother in Utah, she could not have imagined the journey she set out upon. Before she reaches her destination, she must survive a train robbery, a kidnapping, an Indian massacre, and other dangers. Apparently no one in the West is who they seem to be. Jake Maverick has come to escort his partner's sister home from the train depot. When he finally catches up with her, the trouble she brings makes him wonder if they'd have been better off if she never showed up at all. While Jake tries to figure out who Abbie really is, Abbie tries to figure out a God who could let tragedy happen. Can either of them find the amount of trust required to survive?
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PAIGE WINSHIP DOOLY is the author of over a dozen books and novellas. She enjoys living in the coastal Deep South with her family, after having grown up in the sometimes extremely cold Midwest. She is happily married to her high school sweetheart and loves their life of adventure in a full house with six homeschooled children and two dogs.
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text:
Experimental and Therapeutic Studies
Inflammopharmacology is the official publication of the Gastrointestinal Section of the International Union of Pharmacology (IUPHAR) and the Hungarian Experimental and Clinical Pharmacology Society (HECPS).
Inflammopharmacology publishes papers on all aspects of inflammation and its pharmacological control emphasizing comparisons of (a) different inflammatory states, and (b) the actions, therapeutic efficacy and safety of drugs employed in the treatment of inflammatory conditions. The comparative aspects of the types of inflammatory conditions include gastrointestinal disease (e.g. ulcerative colitis, Crohn's disease), parasitic diseases, toxicological manifestations of the effects of drugs and environmental agents, arthritic conditions, and inflammatory effects of injury or aging on skeletal muscle.
The journal has six main interest areas:
- Drug-Disease Interactions - Conditional Pharmacology - i.e. where the condition (disease or stress state) influences the therapeutic response and side (adverse) effects from anti-inflammatory drugs. Mechanisms of drug-disease and drug disease interactions and the role of different stress states
- Rheumatology - particular emphasis on methods of measurement of clinical response effects of new agents, adverse effects from anti-rheumatic drugs
- Gastroenterology - with particular emphasis on animal and human models, mechanisms of mucosal inflammation and ulceration and effects of novel and established anti-ulcer, anti-inflammatory agents, or antiparasitic agents
- Neuro-Inflammation and Pain - model systems, pharmacology of new analgesic agents and mechanisms of neuro-inflammation and pain
- Novel drugs, natural products and nutraceuticals - and their effects on inflammatory processes, especially where there are indications of novel modes action compared with conventional drugs e.g. NSAIDs
- Muscle-immune interactions during inflammation: mechanisms of inflammation and anti-inflammatory actions of therapeutic agents on skeletal muscle under conditions of aging or injury.
Requirements for manuscripts on the pharmacological or inflammatory properties of natural products are described in the editorial Inflammopharmacology Vol. 15, issue 5 or on the journal website: www.springer.com/10787.
- 23 Volumes
- 103 Issues
- 915 Articles
- 8 Open Access
- 1991 - 2015 Available between
Latest Articles
Research Article
Neuroprotective mechanism of losartan and its interaction with nimesulide against chronic fatigue stress
Anil Kumar, Barinder Singh, Jitendriya Mishra… (June 2015)
Research Article
Regulatory role of guanine nucleotide exchange factor (GEF) Dock180 phosphorylation on Tyr/Ser in mediation of gastric mucosal Rac1 activation in response to Helicobacter pylori and ghrelin
B. L. Slomiany, A. Slomiany (June 2015)
Research Article
Exposure to non-steroid anti-inflammatory drugs (NSAIDs) and suppressing hydrogen sulfide synthesis leads to altered structure and impaired function of the oesophagus and oesophagogastric junction
Oksana Zayachkivska, Nazar Bula, Dzvinka Khyrivska, Elena Gavrilyuk… (June 2015)
- Journal Title
- Inflammopharmacology
- Coverage
- Volume 1 / 1991 - Volume 23 / 2015
- Print ISSN
- 0925-4692
- Online ISSN
- 1568-5608
- Publisher
- Springer Basel
- Additional Links
- Topics
- Industry Sectors
Continue reading...
To view the rest of this content please follow the download PDF link above.


text:
I am a hopeless romantic.
My question is... I am a hopeless romantic. Ladies, is that bad in a guy? I am not like all soft and feminine about things, I just love to be in love... Show More
Most Helpful Opinion
I would love to meet a guy like you one day, for me its not bad at all in a guy. I find it very adorable that someone like you is a hopeless romantic, I wish there were more guys like you than the bad ass ones. Chivalry is not dead, but some guys choose to act like jerks around girls and they fall for them I don't know why.
Don't give up on relationships just yet, your time will come and that right girl is out there for you. Just not your time yet;
But yeah I would want my guy to open doors for me without me telling him or hold my heavy bags when I grocery shop for my mother instead of me hinting I need help. Some guys are clueless.
What Girls Said 13
honestly I am not sure. at my age (20) I m attracted to guys that are more sweet but somehow they are only putting on an act. so make sure that when you meet a girl, you keep it real. I know I do, I m a very respectful and committed girl. I am a hopeless romantic too. but I tend to meet ass holes.
aww you reminded me of my boyfriend ^_^
thats not bad that's a great thing there should be more guys like you in the world
its one of the things that drawed me to my bf
i've never been with some one like him
and my love for him grows and grows each day.
whichever girl goes out with you is gonna be a lucky one :)
no. I don't think being a romantic is bad.
My guy does romantic stuff for me. like when I was mad once, he went out and got me a dozen of red roses. oh and one time when I was mad he went out and bought my fav chocolates for me. haha. And for valentines he ordered me a huge fluffy white robe with my name engraved on it, that's romantic! plus a disney romantic songs album. Oh and he writes me lots of long love letters every day =) (we've been together a year so far) so romantic... and we have dinner and wine all the time. I like being romantic. Lovely piano music, roses, nice meal and some sweet red wine. I think that being romantic with your love one is suppose to be special times... so I want to make lots of special times with him. He loves wine, he loves writing to me, he loves to tell me he loves me, and he loves buying stuff for me. And I LOVE all of it... I mean... why should I say no?
I don't think your a hopeless romantic sometimes I wish the guy I was seeing would show how he feels. Its great that you like your partner to be happy. Not allot of guys nowadays are thoughtful enough .
I am very thoughtful
But showing your emotions would remove the mystery and the tension and the guy would just come off as boring.
Ya I've just given up on relationships. There is no winning with women. If you're a jerk, you're mean. If you're too nice, they hate it. If you don't chase them, you're not worth it. Guys aren't hard to keep happy, why can't women be the same? Everyone also wonders why there are so many single guys in their early 30's? No wonder to me.
What Guys Said 7
Im like you man. I've partially just given up, it seems like people just aren't capable of loving til the end anymore. You do one thing wrong and the girl just sits on it and thinks about it til it eats her up and breaks up with you. Or you're too nice and like me too much so you seem boring and predictable. Or you don't care about them enough when you try to back off a little. All while its expected to do the courting, paying for dates, and take the action on everything. Even when sometimes the action you take is "too much" for them and you need to slow down. It gets extremely bothersome. its not that I'm not confident or attractive, its just that this sh*t makes me want to join most of the people my age and just try to hookup.
In some senses, it's good. In some senses, it's bad.
You are a great guy- I'm largely the same way. I would do all I can to please my girl, so long as she loves me back. A lot of girls do appreciate that stuff, and they'll want to come home at the end of the day to snuggle and cuddle with you. You're probably the kind of guy she'd want to marry and come home to every night.
However, for the majority of girls, you're not the one that really gets them riled up. The edgier, badder boys are the ones that really get them excited. They may enjoy slow, passionate sex with you, but if they're looking to get roughed up a little, dominated, and would rather have a rough f*** than make love, you will be the last thing they look for. Even if you ARE able to give it to her rough, it's just not the same feeling for them. The jerks who do as they please are the ones women look to when they really want to be dominated. For some women, they'll choose to marry the bad boy for the sex. Some women will marry the romantic guy and cheat on him with the bad boys. And some women will be content with the romantic guy.
It all depends on the individual.
Well that sucks for me then, huh? Honestly, I just give up even trying. It's depressing. I just don't have it in me to be a jerk. Oh well.
- Show Older Hide Older
I had the girl I wanted for 2 1/2 years and she just walked out on me. Glad to hear you're a good dude too, I hope everything works out for you as well. I just wonder if these women will ever get sick of being used and treated like crap and want to end up with the good guy.
Some will, and some won't. My girl of 2 years left because she found another guy she liked at college orientation, just like that. It sucks, but it's probably for the best. That's life.
Have an opinion?


text:
Tips on migrating to x64?
View Single Post
Join Date: Jan 2008
Posts: 184
Tips on migrating to x64?
I am planning on migrating from Vista 32 to Vista 64, and am looking for any tips.
I have my C drive with quite a few programs (and games with all the mods and patches that go with them) that would be a pain to re-install/download them - I can't imagine the process taking less than an entire weekend.
One thing I do have on my side is a huge amount of reserve disk space on a 1TB external. My idea is to simply copy a huge portion of my C:/program files folder onto the external, and also the accompanying registry keys from HKEY_LOCAL_MACHINE and HKEY_CURRENT_USER. Then of course, after the new OS is running, it should just be a matter of copying back over the programs/games and adding back in the saved reg keys. Has anyone ever tried this before and did it work well?
Finally, if anyone knows good software that can do what I am describing in a less painful way, then please do tell.
View Public Profile
Find More Posts by Zhivago


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39 year old man | Austin, TX, USA | Seeking women 27-37 within 5 miles
Lets try it!
I am looking for a relationship that is sweet, honest and loving. I have a big heart and some have taken that kindness for weakness....that's why they are ex's! Lol I am not looking for a certain type but there are things that are a must to have an honest relationship: pretty, affectionate, loving, complimentary, good body, able to dance, morals, respectful, not a cheater, family oriented, a good kisser, nice butt and genuinely a nice person. Don't mean to seem picky but I know what I want and what will make me happy! Phewwww....ok ok no mas seriousness! I am very easy going and constantly looking to laugh and smile. I am hardly in a bad mood and will try anything once...maybe twice. Hope to talk to you soon!
Camping , Coffee and conversation , Cooking , Dining out , Fishing/Hunting , Movies/Videos , Music and concerts , Exploring new areas , Nightclubs/Dancing , Playing cards , Playing sports , Video games , Watching sports , Wine tasting
Billiards / Pool, Bowling, Dancing, Football, Hockey, Martial arts, Skiing, Swimming, VolleyBall, Walking / Hiking, Weights / Machines
I exercise 3-4 times per week.
I like Dogs, Exotic Pets, Horses
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What he is looking for
|6'3" (190cms)
|3'0" (91cms) to 8'11" (271cms)
|Body type:
|Athletic and toned
|Slender, About average, Curvy, Athletic and toned
|No preference
|No preference
|No Way
|No preference
|Social Drinker
|No preference
|I'll tell you later
|No preference
|$35,001 to $50,000
|No preference
|No preference
|Have kids:
|Yes, and they live away from home (2)
|No preference
|Wants kids:
|Not sure
|No preference
|White / Caucasian
|No preference
|Christian / Other
|No preference
|I'll tell you later
|No preference
|Some college
|No preference


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You can now invite anyone to meet at your favorite Starbucks.
Limited-time feature
52 year old man | Hydes, MD, USA | Seeking women 38-54 within 20 miles
Intimacy Required!
Only 4000 characters to allow for an intro? That's crazy! I am a divorced father of 2 (one daughter and one son), (The next part is being written by a female friend.) This guy is fun and outgoing, very well versed in everything and anything. He can talk sports, politics, religion, economy, fashion, cars, electronics, jewelry, cuisine, travel and on and on. An extremely selfless person who hears you when you speak and manages to even hear the unspoken (which is a great quality in a guy). Loves to have a good time in any venue. Very outgoing and friendly, always inviting to new people. Your girlfriends will love him, your dad will want to hang with him and your mom will want to know where he's been hiding! He's a romantic at heart and has a great set of values. He's the kind of guy that gives 100% to everything in his life. I promise you, he is everything you could want and more...you won't be disappointed! The above part was written by a female friend, who convinced me to do this whole "Match.com" thing! . She actually took it upon herself to write my profile and then ask me for my credit card to sign me up, LOL. It turned out that she found her "match" here, and they just had their first child together. Thanks D ! :-) I'm looking for a women who wants and is capable of having a deep intimate relationship... Intimacy is not sex, FYI! Someone to share my life with, both the good times and the bad times. So many women say that want a relationship like this, but my experience has shown me that few have the tools needed to be in an intimate relationship. We all have baggage, but please be healthy enough to have worked thru yours. If you haven't dealt with it your not ready for any relationship. No man is going to wave a magic wand and take it away from you. Looking for someone to spend the rest of my life with, to grow old with. I want to be that couple that everyone looks at and says "Look at how in love they are!" I know this is possible, and hopefully you do too.
Alumni connections , Camping , Coffee and conversation , Business networking , Cooking , Dining out , Fishing/Hunting , Gardening/Landscaping , Hobbies and crafts , Movies/Videos , Museums and art , Music and concerts , Exploring new areas , Nightclubs/Dancing , Performing arts , Playing cards , Playing sports , Religion/Spiritual , Shopping/Antiques , Travel/Sightseeing , Volunteering , Watching sports
Auto racing / Motorcross, Baseball, Billiards / Pool, Football, Golf, Other types of exercise, Skiing, Swimming, Tennis / Racquet sports, VolleyBall, Walking / Hiking, Weights / Machines
I exercise 3-4 times per week.
I have Cats
I have two Bengel cats, which are bred from South East Asian Leopards... They are amazing animals. Google them if you want to see the most amazing cats in the world! I recently got a Siberian Husky puppy for my son.
Middle of the Road
I've seen most of the world for business and pleasure. Paris and Hawaii are my favorite destinations and where I like to visit the most. I would also place Mexico, New Orleans, San Fran, Fand Washington DC at the top of my list for fun and relaxation
Lehigh University, Bethlehem, PA
I love spending time with my children, the color green, Thai food, movies, shopping, lounging on a rainy day while enjoying great food, spending time with friends and live music. I am up for anything as long as I enjoy the people/person I am with.
I am easy to get along with. I enjoy staying at home with dinner and movie as much as strolling through a new city. I enjoy finding a new destination and checking out all the local activities, clubs, restaurants, etc.
The Road Less Traveled and my text messages/email on my phone.
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What he is looking for
|5'9" (175cms)
|4'9" (144cms) to 6'0" (182cms)
|Body type:
|Athletic and toned
|Slender, Athletic and toned
|Black, Blue, Brown, Grey, Green, Hazel
|Dark brown
|No preference
|No Way
|No Way, Occasionally, Daily, Cigar aficionado, Yes, but trying to quit
|Never, Social Drinker, Moderately
|Executive / Management
|No preference
Would rather discuss directly.
|$75,001 to $100,000
|$35,001 to $50,000, $50,001 to $75,000, $75,001 to $100,000, $100,001 to $150,000, $150,001+
|Never Married, Widow / Widower, Divorced
|Have kids:
|Yes, and they sometimes live at home (2)
|Yes, and they sometimes live at home, No, Yes, and they live away from home, Yes, and they live at home
|Wants kids:
|Probably not
|Not sure, Probably not, No, No, but it's OK if my partner has kids
|White / Caucasian
|Asian, East Indian, Latino / Hispanic, Middle Eastern, Native American, Pacific Islander, White / Caucasian, Other
|Spiritual but not religious
|No preference
|English, French
|No preference
|Bachelors degree
|No preference


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lakira_tho... Model
Tiffany CPhotographer Female Atlanta, Georgia, US
My Website: Photography by Tiffany CMy MM URL: http://www.modelmayhem.com/TiffanyCainesPhotography
Mayhem # 1648364
About MeFASHION | GLAMOUR | EDITORIAL | LIFESTYLE | LINGERIE | FINE ART | COMMERCIAL
Studio Style and Travel/Location Shoots available!
Located in GEORGIA. LOUISIANA. FLORIDA
Hello and Thank you for dropping by. My name is Tiffany. I'm a Female Photographer. Originally from US Virgin Islands but now residing in Atlanta. I have and am very capable of shooting a wide range of genre. I shoot everything from Head shots, Family, Lifestyle/Editorial, Glamour/Fashion, Lingerie/Boudoir, Artistic, to Events such as Weddings and etc. I have worked with models ranging from no experience to very experienced including a wide range of ages. I have been told I am very comfortable to work with. I am easy going, respectful, discrete and confidential. With working with me I make sure you (client) is completely comfortable in your environment. I am very experienced at proper lighting and I do my own editing. I do offer Makeup and Hair services upon requests. I am very creative Aside from Photography I've been exploring inner fields. From Videos to Painting and soon Modeling. There's always someone mentioning that I should consider Modeling. So I will definitely be seeking other Dope Shooters to capture shots of myself.
TF Sessions to selected Artists. If interested in working with me, feel free to shoot me a Mayhem Message or reference the Contact information below for direct contact. I am always Casting Models for photo, music video and acting opportunities. My work has been shown in Magazines, Model's portfolios, and Model's comp cards. My work has also been used as content for business cards, greeting cards, announcements, company websites and advertisements.
I offer competitive and negotiable Modeling packages for portfolio development for beginners, and portfolio enhancement for professionals. For those Models that will be interested in Shooting with us regularly, you will receive a Special Model Rate for Services.
My Packages can be adjusted to fit your requirements and your budget. I aim to keep my Rates below my competitors. Giving you a great rate with, outstanding quality products.
I see lots of New models with profiles that say "Paid Assignments Only" If you are really focused and serious about modeling and you want paying gigs, you need to invest. Life is an investment, careers are investments. I can help you expand your Portfolio and get you to where you can command pay for your work. If you believe in yourself, then you need to invest in yourself.
Due to high number of last minute cancellations and flakes aka "no-shows", I will confirm all Photo / Video Sessions 3-5 days prior to your Shoot Date. If you do not respond to my confirmation call or message, I will consider the shoot cancelled. Please confirm your participation.
Upcoming Traveling Dates:
Feb 3 -18th, 2015
Now Casting FEMALE Models for Mardi Gras Photo Shoots, Clothing Line Shoots and Music Video Shoots. Contact me with Name & Model Mayhem Number. You can send a message or Email firstname.lastname@example.com
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(404) 913-4204
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Casting Calls
lakira_tho... Model
5am7all Model
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To mitigate risk and remain compliant in accordance with US Department of Labor Occupational Safety and Health Administration (OSHA) guidelines, a number of firms have protected themselves with EHS compliance software solutions. Given that EHS software's primary task is to identify and mitigate risk that will harm, hinder or hurt an organization'
Foremost among EHS compliance software solutions, is Knorr Associates' DataPipe. DataPipe is a smart and simple, comprehensive modular software solution for collecting, managing, interpreting and reporting environment, occupational health, safety and industrial hygiene data. Knorr Associates has engineered EH&S software solutions since it's founding in 1979 – far longer than any other company in the industry.
See DataPipe live as Knorr system architects' walk you through the actual forms, demonstrate the customization and flexibility of the system and run live reports.
# # #
Knorr Associates Inc. has been providing DataPipe, the complete EH&S information management software solution for over 30 years. DataPipe is a smart and simple, modular software solution for collecting and managing EHS data.


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Science & Nature Activities for Ages 6-7
Science & Nature Activities for Ages 6-7
Make a home for a caterpillar — and observe the magic!
You might have heard that an egg will stand on end on the spring equinox. We researched the truth behind this science myth.
They're one-of-a-kind — and tasty, too!
Space enthusiasts will enjoy this quick, hands-on experiment.
What kinds can your child find?
A blizzard of playful activities that you can do outdoors and in.
Dress up an ordinary jar with natural materials.
by Ellen Church
The season's colors and textures provide a harvest of natural playthings to collect, observe, and manipulate.
by Teri Cettina
Suggest these 3 easy experiments that will give kids a lesson in biology and physics.
Get crafty, creepy, and crawly with magnets.
If your child adores undersea life, help him create an ocean scene in a box.
by Robin Smith
Learn about insect bodies with these creepy crawlers.
Optical illusions defy the old saying, "What you see is what you get."
by Lynne Kepler
Recycle a plastic soda bottle and feed your family's feathered friends.


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This member hasn't added any personal information yet.
Leave Brighton811 a message to find out more.
Posted 03/10/2013 09:46:24 EDT
Ortiz is, and has always been, a fraud.
Posted 02/17/2013 08:15:30 EST
Another clown who's very average numbers will be masked by the medias love for him and his oh so funny rhetoric.Remember this is the same media that that describes fraud Ortiz as very intelligent and more »
Posted 02/06/2013 12:05:52 EST
I cant wait to see him fail miserably-hes a bum.Its a team full of frauds from top to bottom starting with the neanderthal himself- the cheat Ortiz.
Posted 01/29/2013 05:43:30 EST
Lived in this great city of Boston for 15yrs and still find it unbelievable that people here are so obsessed with NY.Its embarassing.Ortiz and Ramirez are as big a frauds as A Rod.And please do me a f more »
Posted 07/02/2012 08:47:21 EDT
There are third world countries with better transportation systems than Boston.The MBTA is an embarassment to the city. more »
Posted 07/01/2012 02:07:46 EDT
Oh sorry i forgot,its only the yankees that take PED's and cheat. more »
Posted 07/01/2012 02:05:18 EDT
Well done you cheating,drug taking,neanderthal. more »
Posted 05/06/2012 01:23:37 EDT
Was that Puntos first hit? more »
Posted 04/11/2012 08:22:15 EDT
Good for you Tito,a top manager and a class act.Fenway is a dump. more »
Posted 04/10/2012 02:13:03 EDT
And this in a country boasting the likes of Cheney and Kissinger,wankers who are right up there with Castro. more »
Posted 03/18/2012 09:01:15 EDT
Bassfishing is nuts,i love him! more »
Posted 03/11/2012 09:07:13 EDT
Gotta love the propaganda in this country more »
Posted 03/06/2012 08:32:15 EST
Top player,top guy. more »
Posted 03/03/2012 07:43:35 EST
We have been lied to,cheated and disgraced by 2 con men in the White House for the last 11 years so why not give in to a con man who is actually going to bring some revenue and jobs to the area. more »
Posted 01/23/2012 04:00:12 EST
2000 more »
Posted 01/23/2012 03:57:39 EST
I hope he would do the same if it was a republican because all they have contrived to do since 200 is destroy the middle class of our country while managing to let the rich get richer.Obama is pretty more »
Posted 12/11/2011 06:35:37 EST
As a Pats fan i believe that the first playoff game is going to be a disaster if we come across a Pittsburgh or the like.Stop listening to the hometown media,we are awful.McCourty might go from being more »
Posted 12/09/2011 07:46:02 EST
see ya later bum. more »
Posted 12/03/2011 11:45:12 EST
A lot of this is bollocks.Its going to be very interesting in january when we get dumped out of the playoffs because of an inept defence built on the 'value' system. more »
Posted 11/17/2011 08:19:11 EST
Rumors circulated that their arguments over who was the more talentless was a contributing factor to the split. more »
Posted 11/10/2011 08:08:13 EST
What a fraud and a dispicable human being Paterno is.He could have saved many boys from being raped if he pursued it.I hope he dies roaring and the civil suits bring this dump to its knees. more »
Posted 10/15/2011 07:38:52 EDT
'Josh Beckett is one of the most competetive guys ive ever met'-John Henry.How can he say this when its obvious (even some pink hats have noticed) this guy has been lazy,overweight and very unprofessi more »
Posted 10/13/2011 02:01:25 EDT
go f... yourself Ortiz,you fat,drug taking neanderthal. more »
Posted 10/03/2011 05:30:59 EDT
Counterpoint,i think you should try a thing called education. more »
Posted 09/30/2011 07:02:14 EDT
Good luck Tito,a very good manager and a better man.It amazes me how smug boy Epstein gets off scot free,hes a joke. more »
©2015 Boston Globe Media Partners, LLC
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text: doi:10.15468/kg0bst 13050 Kieppi bird collection Mari Mäenpää Kokkola Nature Collection KieppiProject employee KokkolaFINLAND firstname.lastname@example.com Hannu Saarenmaa Digitisation Centre of the Finnish Museum of Natural History and the University of Eastern Finland JoensuuFINLAND email@example.com Veikko Salkio FINLAND ORIGINATOR 2013-01-29 ENGLISH The bird collection consists 221 species and 536 individual specimen. The specimen in the collection have been prepared by Veikko Salkio. Species that occur rarely in Finland are represented among others. As a separate group featured are colour variations, hybrids and deformities in birds. Almost all specimens are from Finland. 19.89 32.5 70.21 59.34 Paula Hyttinen Kokkola Nature Collection KieppiCurator Pitkänsillankatu 26Kokkola67100FINLAND +358 6 email@example.com No animal has been killed for the collection, they have died due to road traffic or other accidental means. They have been brought by the authorities, helpers and also the public. Digitizing the culture heritage Mari Mäenpää ADMINISTRATIVE_POINT_OF_CONTACT 2015-05-13T11:59:10.944+02:00 Kokkola Nature Collection Kieppi: Kieppi bird collection http://ipt.digitarium.fi/ipt/logo.do?r=kieppi_birds Veikko Salkio's Nature Collection Kieppi Veikko Salkio's Nature Collection Kieppi Veikko Salkio's Nature Collection Kieppi


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Photo by Alan Richardson
YIELD: Makes 4 servings
ACTIVE TIME: 1 hr
TOTAL TIME: 1 hr
Pat squid dry, then cut bodies lengthwise into 1/4-inch-wide strips and quarter tentacles lengthwise. Season with salt and pepper.
Heat 1 teaspoon oil in a 12-inch nonstick skillet over high heat until hot but not smoking, then cook oregano, rosemary, red pepper flakes, and 1 teaspoon garlic, stirring, until fragrant, about 30 seconds. Add squid strips and tentacles and sauté, stirring constantly, until opaque and curled, about 1 minute. (Do not overcook, or squid will toughen.) Transfer to a sieve set over a bowl to catch juices squid releases.
Combine squid juices from bowl with fish stock in a saucepan and bring to a simmer. Season with salt and keep at a bare simmer.
Heat remaining 2 teaspoons oil in a large heavy saucepan over moderate heat until hot but not smoking, then cook remaining garlic, stirring frequently, until pale golden, 2 to 3 minutes. Stir in rice and cook, stirring constantly, until rice is translucent, 4 to 5 minutes. Add wine and cook, stirring constantly, until absorbed. Stir in 1 cup simmering broth mixture and cook at a strong simmer, stirring frequently, until broth is absorbed. Continue cooking at a strong simmer and adding broth, 1/2 cup at a time, stirring frequently and letting each addition be absorbed before adding the next, until rice is tender but still al dente and creamy looking, 18 to 20 minutes total. (There may be broth left over.)
Stir in squid and parsley and cook just until heated through, about 1 minute. Add lemon juice and salt and pepper to taste.
Each serving about 386 calories and 4 grams fat.
Nutritional analysis provided by Self


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You can now invite anyone to meet at your favorite Starbucks.
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45 year old man | Oakville, ON, CAN | Seeking women 34-46 within 18 miles
New and improved!
Me: Intelligent, athletic, sometimes funny, occasionally cute, friendly, social, loyal, amusing (I have my moments), a Gemini, and a twin. I work hard, but I'm also looking forward to summer to be physically active outside - enjoying riding my bike to work now, and started running again. Not setting any records, but it still feels good. In my spare time I enjoy working on my house, buying things I surely don't need, and generally avoiding television. Looking for chemistry and that connection... You -- must like brunch, laughing, sweating, and a cold beverage on a hot day (maybe not exactly in that order)... Super bonus points for a sense of humour, even if it's at my expense!
Coffee and conversation , Dining out , Movies/Videos , Museums and art , Music and concerts , Playing sports , Shopping/Antiques , Travel/Sightseeing , Wine tasting
Cycling, Inline skating, Running, Skiing, VolleyBall, Weights / Machines, Yoga
I exercise 3-4 times per week.
I like Cats, Fish
Interesting combination - doesn't look good for the fish!
Middle of the Road
I've lived a number of places (Vancouver, Ottawa, Toronto) and worked all over (Baja Mexico, South Africa, Australia) but I love coming home. It would be nice to find a travel companion too -- hope that Ireland and France are on your list(?)!
Queen's University at Kingston, Kingston, ON
I have a weakness for anything Hugo Boss, Starbucks coffee, and good music (alternative rock, but also appreciate RandB and new country) -- but what makes me happiest is physical activity and time with friends and family. And of course laughing!
I love seeing my brothers, we're 5 boys (!) so it's nice to get together and catch up, and joke around a bit too (all in good fun)... sarcasm, inappropriate humour, etc. They're generally accompanied by cute little short people, always lots of fun!
I just finished Joe Strummer's biography (lead singer of the Clash). It was fascinating to follow the creation of an entirely new genre of music that influenced so many new bands that followed.
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What he is looking for
|5'10" (177cms)
|5'1" (154cms) to 6'0" (182cms)
|Body type:
|Athletic and toned
|Slender, About average, Athletic and toned
|Black, Blue, Brown, Grey, Green, Hazel
|Light brown
|Auburn / Red, Black, Light brown, Dark brown, Blonde, Dark blonde, Platinum
|No Way
|No Way
|Social Drinker
|Never, Social Drinker, Moderately
|Technical / Science / Computers / Engineering
|No preference
Coastal Engineer - ask me (hint: big wave geek)
|$100,001 to $150,000
|$35,001 to $50,000, $50,001 to $75,000, $75,001 to $100,000, $100,001 to $150,000, $150,001+
|Never Married
|No preference
|Have kids:
|No preference
|Wants kids:
|Not sure
|No preference
|White / Caucasian
|East Indian, Middle Eastern, White / Caucasian
|Christian / Protestant
|Agnostic, Atheist, Christian / Catholic, Christian / LDS, Christian / Protestant, Spiritual but not religious, Other, Christian / Other
|English, French
|Graduate degree
|Some college, Associates degree, Bachelors degree, Graduate degree, PhD / Post Doctoral
4 years in Kingston for my bachelor's, 2 years at U.B.C. for my masters (did some skiing)...


text:
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text:
Allan Lichtman, the American University professor whose election formula has correctly called every president since Ronald Reagan's 1984 re-election, has a belated birthday present for Barack Obama: Rest easy, your re-election is in the bag.
"Even if I am being conservative, I don't see how Obama can lose," says Lichtman, the brains behind The Keys to the White House.
Lichtman's prediction helps to explain a quirk in some polling that finds that while Americans disapprove of the president, they still think he will win re-election.
Working for the president are several of Lichtman's keys, tops among them incumbency and the scandal-free nature of his administration.Undermining his re-election is a lack of charisma and leadership on key issues, says Lichtman, even including healthcare, Obama's crowning achievement.
Lichtman developed his 13 Keys in 1981. They test the performance of the party that holds the presidency. If six or more of the 13 keys go against the party in power, then the opposing party wins."The keys have figured into popular politics a bit," Lichtman says. "They've never missed. They've been right seven elections in a row. A number that goes way beyond statistical significance in a record no other system even comes close to."
Originally posted by queenannie38
"Even if I am being conservative, I don't see how Obama can lose," says Lichtman, the brains behind The Keys to the White House.
Originally posted by TDawgRex
reply to post by queenannie38
just look at the BLS report om unemployment.
Originally posted by karen61057
reply to post by beezzer
Beezy old friend. that sounds more like a wish than a conviction.
Edited to add, all hail the bunny. I still remember my friend.edit on 10-10-2012 by karen61057 because: (no reason given)


text:
AUSTIN, Texas—Harry Rajak, former dean of the University of Sussex Law School in England and a visiting professor at the University of Connecticut School of Law, will deliver the Akard Lecture at The Four Seasons Hotel in Austin on Wednesday, Nov. 15, from 5:30 p.m. to 7:30 p.m., with a reception to follow.
The lecture, "Bankruptcy in the United States and the United Kingdom—Contrast and Convergence," is free and open to the public. The lecture kicks off the 25th Annual Bankruptcy Conference, which takes place at the Four Seasons on Nov. 16 -17 and is offered by The Office of Continuing Legal Education (CLE) at The University of Texas School of Law.
For over a century, the United Kingdom has had a system of secured lending and bankruptcy very different from the United States, but recent amendments to its laws appeared to move British procedures closer to those in America, especially with regard to reorganizing financially troubled corporations. Rajak, who is one of England's most highly regarded experts in the field, will describe the changes and compare the results to the experience in the United States.
Professor Jay Westbrook, who teaches bankruptcy at The University of Texas School of Law, commented that "Harry Rajak is not only a leading expert, but a charming speaker, able to make a technical area of the law clear and interesting. We are very lucky to have been able to bring him to Austin."
Rajak earned a B.A. degree in classics and an L.L.B. degree at the University of the Witwatersrand in South Africa and then a master's degree in law at the University of London. He is a barrister who practiced law both in South Africa and England, before joining the faculty of law at King's College, University of London. , He subsequently moved to the University of Sussex, where he was the Dean of the Law Faculty between 1997 and 2003.
He was for a number of years the joint editor of the leading UK journal, Insolvency Law and Practice, and was a consultant at the London-based law firm, Lovells. Rajak was a member of the United Kingdom's Department of Trade and Industry and Treasury Department's Review of Company Rescue and Business Reconstruction Mechanisms, which reported in 2000 and he has been a consultant and author on studies of the bankruptcy laws for the World Bank and for a number of foreign jurisdictions. He has written widely on Company Law, Corporate Insolvency and Commercial Law issues. His books include Company Liquidations (2nd ed., 2006) and he is one of the editors of a leading UK volume on Company Director Disqualification.
This will be the third John C. Akard Distinguished Lectureship. In 2001, Harvard Law Professor Elizabeth Warren discussed "Bankruptcy and The Changing Economics of Divorce." In 2003, UT Law Professor Ronald Mann lectured on "Policy Implications of the Global Growth of Card-Based Payment Systems."
The John C. Akard Distinguished Lectureship Program was endowed by the generous gifts of many members of the Texas bankruptcy bar in honor of Judge John C. Akard, a 1957 UT Law graduate who served with great distinction for 14 years as the U.S. Bankruptcy Judge in the Northern District of Texas, sitting in Lubbock and throughout much of West Texas.
Related Links:
25th Annual Bankruptcy Conference: http://conferences.utcle.org/law/cle/conferences/fall2006/BK06/index.html
Professor Elizabeth Warren to deliver first Akard Lecture: http://www.utexas.edu/law/news/2001/akard.html
UT Law Expert Offers Broad-Ranging Critique of Credit Card Policy, Nov. 19: http://www.utexas.edu/law/news/2003/111703_credit.html


text:
10 Radical Sayings of Jesus
Not Everyone Enters the Kingdom
Not Everyone Enters the Kingdom
Not everyone who says to me, Lord, Lord, will enter the kingdom of heaven, but the one who does the will of my Father who is in heaven. On that day many will say to me, Lord, Lord, did we not prophesy in your name, and cast out demons in your name, and do many mighty works in your name? And then will I declare to them, I never knew you; depart from me, you workers of lawlessness.
— Matthew 7:21-23
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Arizona Diamondbacks
Gambo: D-backs never close to trading Upton to Texas
The internet has been abuzz with rumors about the Arizona Diamondbacks trading right fielder Justin Upton to (fill in the blank).
Over the last few days, the most prominent and frequent rumors have had the Texas Rangers strongly pursuing Upton. Friday morning, MLB Network's Peter Gammons went as far to tweet that he witnessed a Rangers official telling an official from the Houston Astros that they had landed Upton.
Not so fast, says Arizona Sports' John Gambadoro on Twitter.
Contrary to reports the Diamondbacks were never close to trading Justin Upton to Texas, that report is 100% false!— John Gambadoro (@Gambo620) December 7, 2012
Acknowledging the absent punctuation that muddles the meaning, the Diamondbacks were never close to making the deal with Texas.
Gambadoro acknowledged in a phone conversation that Arizona does hold Texas shortstops Elvis Andrus and Jurickson Profar in high regard, but Texas isn't interested in moving either player right now.
Most Popular
- Tony La Russa, Diamondbacks chief baseball officerCan the Dbacks get to .500 before the break?
- Chip Hale, D-backs managerChip Hale talks about the D-backs big win over the Dodgers and the health status of the team.
- HardwareThe Justin Bieber award, the You're Just Mean award, and more of the best/worst of the weekend
- Can of Corncast - Future Stars and Scherzer's Impressive StretchAndy shares his favorite prospects from this year's All-Star Futures rosters
- 6-26-15 The Sports Kabob with Jarrett CarlenTopics include the NBA Draft and Pete Rose. It's sports news skewered.


text:
Thanks for coming to the 2015 Annual Meeting & Trade Show
Save the Date for February 8-12, 2016!
Great Exhibitors This Year!!
Remember, you must be a 2015 WAWGG member to qualify for the member rates for the 2015 Annual Meeting
Questions? Email firstname.lastname@example.com or call 509-782-8234.
2015 Presentations - Please Click Here


text:
PADRES: Estes is ready for his return to majors
Left-hander is a candidate to start Thursday in Atlanta
"We certainly don't want to lose him."
The Padres also are curious to see if Estes, who has started all but one of his 274 career games, could pitch out of the bullpen. Either way, Estes said he can only worry about his next start.
"I can't focus on what's happening up there on every fifth day," Estes said. "I have to stay focused on what I'm doing. As much as I want to pitch for the Padres, I'm pitching right now to pitch in the big leagues."
Padres notes
General manager Kevin Towers said the club hasn't overlooked the hot start by OF Jody Gerut at Triple-A Portland. Gerut is hitting .326 with 15 extra-base hits, including five home runs, and 16 RBIs. Towers said the Padres wouldn't hesitate to put Gerut in center field. … The Padres have no interest in OF Jacque Jones, who was designated for assignment by the Detroit Tigers on Monday. Jones is hitting .165 with one homer in 79 at-bats. At this point, Towers said, any moves would be internal. "I don't know if there's that guy out there that's going to turn us around," he said.
Contact staff writer Dan Hayes at email@example.com .


text:
David Baumann Show : What's Next for Celtics ?
Host, The David Baumann Show
Follow @ davidbaumann33
With Rajon Rondo out for the year with torn acl, what do the Celtics do now ? Jessica Camerato of Comcast Sports New England join the show to discuss what the future holds in Boston?
David Baumann Show 1-28-13- Press Play
The David Baumann Show comes to you live Monday through Friday 6-9am from the Culpepper | Kurland Sports Talk 1040 Studios in Tampa
Talk with us during the show: 1080 Studio Line: 407-482-3776 Toll Free: (877) 380-1080
Chat with us online: Sports Talk Florida – @SportsTalkFLA
David Baumann – @DavidBaumann33
Eric Lopez – @EricLopezELO
Read more at http://www.sportstalkflorida.com/christian-laettner-on-david-baumann-show/#Ljp7KF6VsWjxkHsj.99
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Real Clear Science has an excerpt from Yuval Harari's recent book Sapiens: A Brief History of Humankind:
Scientists also agree that about 70,000 years ago, Sapiens from East Africa spread into the Arabian peninsula, and from there they quickly overran the entire Eurasian landmass.
When Homo sapiens landed in Arabia, most of Eurasia was already settled by other humans. What happened to them? There are two conflicting theories. The 'Interbreeding Theory' tells a story of attraction, sex and mingling. As the African immigrants spread around the world, they bred with other human populations, and people today are the outcome of this interbreeding.
For example, when Sapiens reached the Middle East and Europe, they encountered the Neanderthals. These humans were more muscular than Sapiens, had larger brains, and were better adapted to cold climes. They used tools and fire, were good hunters, and apparently took care of their sick and infirm. (Archaeologists have discovered the bones of Neanderthals who lived for many years with severe physical handicaps, evidence that they were cared for by their relatives.) Neanderthals are often depicted in caricatures as the archetypical brutish and stupid 'cave people', but recent evidence has changed their image.
According to the Interbreeding Theory, when Sapiens spread into Neanderthal lands, Sapiens bred with Neanderthals until the two populations merged. If this is the case, then today's Eurasians are not pure Sapiens. They are a mixture of Sapiens and Neanderthals. Similarly, when Sapiens reached East Asia, they interbred with the local Erectus, so the Chinese and Koreans are a mixture of Sapiens and Erectus.
The opposing view, called the 'Replacement Theory' tells a very different story – one of incompatibility, revulsion, and perhaps even genocide. According to this theory, Sapiens and other humans had different anatomies, and most likely different mating habits and even body odours. They would have had little sexual interest in one another. And even if a Neanderthal Romeo and a Sapiens Juliet fell in love, they could not produce fertile children, because the genetic gulf separating the two populations was already unbridgeable. The two populations remained completely distinct, and when the Neanderthals died out, or were killed off, their genes died with them. According to this view, Sapiens replaced all the previous human populations without merging with them. If that is the case, the lineages of all contemporary humans can be traced back, exclusively, to East Africa, 70,000 years ago. We are all 'pure Sapiens'.
A lot hinges on this debate. From an evolutionary perspective, 70,000 years is a relatively short interval. If the Replacement Theory is correct, all living humans have roughly the same genetic baggage, and racial distinctions among them are negligible. But if the Interbreeding Theory is right, there might well be genetic differences between Africans, Europeans and Asians that go back hundreds of thousands of years. This is political dynamite, which could provide material for explosive racial theories.
In recent decades the Replacement Theory has been the common wisdom in the field. It had firmer archaeological backing, and was more politically correct (scientists had no desire to open up the Pandora's box of racism by claiming significant genetic diversity among modern human populations). But that ended in 2010, when the results of a four-year effort to map the Neanderthal genome were published. Geneticists were able to collect enough intact Neanderthal DNA from fossils to make a broad comparison between it and the DNA of contemporary humans. The results stunned the scientific community.
It turned out that 1-4 per cent of the unique human DNA of modern populations in the Middle East and Europe is Neanderthal DNA. That's not a huge amount, but it's significant. A second shock came several months later, when DNA extracted from the fossilised finger from Denisova was mapped. The results proved that up to 6 per cent of the unique human DNA of modern Melanesians and Aboriginal Australians is Denisovan DNA.


text:
Joe D. Hutchins is the President of 4139 Management, Inc. and inactive roles in one additional company .
4139 Management, Inc. filed as a Domestic Non Profit Corporation in the State of Florida filed on Tuesday, June 14, 1983. This corporation is approximately thirty-two years old according to documents filed with Florida Department of State. 4139 Management, Inc. also lists Nelson A. Brooke as Treasurer.
Joe D. Hutchins is connected to other officers through these corporate roles. One of the top connections is Nelson A. Brooke .
Joe's past corporate interests include the Treasurer of Society for Information Management, South Florida Chapter, Inc. .
Key roles for Joe D. Hutchins
4139 Management, Inc.
President, Secretary Vice President, Director
Society for Information Management, South Florida Chapter, Inc.
Treasurer, Director


text:
Warren Ellis
WARREN ELLIS is a graphic novelist and author of the NYT best-selling novel GUN MACHINE. His graphic novel GLOBAL FREQUENCY is being developed for television by Jerry Bruckheimer and FOX. He is the writer of the graphic novel RED, adapted into the film starring Bruce Willis and Helen Mirren. His next book is NORMAL from FSG.
And now I'm attempting to test the desktop blogging system.


text:
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These two studs hook up for a night of unbridled passion, flipping a coin to see who goes top and who goes bottom. The thuggish skinhead ends up being the cocksucker for the night, leaving on his bright yellow jumper to hide his chubby stomach while he gets down on his knees and sucks. The other man lays a paternal hand on the skinhead's head, urging him to suck faster and deeper. He lays there like a king as the skinhead impales himself anally on the dick, grinding up and down with practiced ease. The skinhead takes the cumload in his mouth, and then the two gentlemen swap the warm jism.
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text:
Alternator Ravage Sighted in US
Thursday, February 3rd, 2005 9:04AM CSTCategories: Reviews, Sightings
Posted by: Alex Kingdom Views: 18,815
Smokestreak of the 2005 boards has posted an image confirming sighting of Alternator Ravage in the US. He picked Ravage up in his local Target in Berkeley California. You can view the image of Alt ravage with Target receipthere.
Credit(s): TFW2005.com
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text:
The Australian Cyber League (ACL) will be partnering with the Blizzard World Championship Series for the third round of the Starcraft II regionals to be held around Australia in June.
First- and second-place winners from the ACL round of regionals will score a spot at the nationals event of the Starcraft II World Championship Series, which consists of tournaments held around the world.
Starting with national qualifiers, players will battle it out for a chance to prove they have what it takes to be the best in the country, and if successful, they will qualify for the Oceanic finals in their part of the world. Winners of the Oceanic finals will earn a place in the Starcraft II World Championship Series to compete for the title of World Champion.
ACL regionals are open-invite to compete for season points in each city, followed by the national events. ACL hosts four national events per year.
Dates and locations for the third round of the ACL's Starcraft II regionals can be found below:
Sunday, June 3
City Hunter Cyber Cafe, Level 1, 154-156 Burwood Road, Burwood.
Sunday, June 10
Venue TBA.
Sunday, June 17
ARENA Net Cafe, 264 Rundle Street, Adelaide.
BRISBANE Sunday, June 30
LanSmash WinterSmash, QSAC, Kessels Road, Nathan.
For more information, visit the official ACL site.


text: Following up such a revered classic as 2K Boston's BioShock was never going to be easy. The game's vibrant, deadly and compelling dystopian world proved an absolute revelation when it was unleashed in 2007. Thankfully, 2K Marin has honoured the work of its big sister by making BioShock 2 a worthy sequel, with the undersea city of Rapture being as alive and intoxicating as ever, brimming with new mysteries to be uncovered. 5/5


text:
A process and resultant devices is described for forming MOSFET, CMOS and BICMOS devices of Group IV alloys, in particular Six Ge1-x wherein 0<x<1, using ion beam oxidation (IBO) or ion beam nitridation (IBN) by CIMD to form insulators of the Group IV alloys.
1. A structure formed of a Group IV alloy layer on a substrate with an insulative spacer formed of a material from the group comprising ternary compound oxides, nitrides, or quaternary compound oxynitrides of said alloy formed thereon.
2. The structure of claim 1 wherein the alloy is Six Ge1-x wherein 0<x<1 and the insulative spacer is formed of Six Ge1-x Oy and 0<y≦2.
3. The structure of claim 2 wherein the substrate is formed of Si.
4. The structure of claim 1 wherein the alloy is Six Ge1-x wherein 0<x<1 and the insulative spacer is formed of Six Ge1-x Hz and 0<z≦4.
5. A device formed on a substrate, the device having a structure comprising a source region and drain region with a channel region formed therebetween and a gate electrode formed over the channel region and spaced therefrom by a gate spacer and wherein the structure is formed of a heteroepitaxial Group IV alloy and the gate spacer is a dielectric from the group comprising ternary compound oxides, nitrides or quaternary compound oxynitrides of said alloy.
6. The device of claim 5 wherein the gate spacer is formed of a nitride of said alloy.
7. The device of claim 5 wherein the gate spacer is formed of material from the group comprising ternary oxides, nitrides or quaternary oxynitrides of said alloy.
8. The device of claim 7 in which the substrate is Si and the alloy is Six Ge1-x where 0<x<1.
9. A MOS device having a source and drain region separated by a channel region and wherein said regions are formed of a heteroepitaxial Group IV alloy on a substrate, a gate electrode over said channel region and insulated therefrom by a ternary oxide of said alloy.
10. A MIS device having a source and drain region separated by a channel region and wherein said regions are formed of a heteroepitaxy Group VI alloy on a substrate, a gate electrode over said channel region and insulated therefrom by a ternary nitride of said alloy.
11. The MIS device of claim 10 wherein the Group IV alloy is Six Ge1-x and 0<x<1.
12. A heterostructure bipolar transistor having a collector, base, and emitter formed of a doped Group IV alloy base disposed between a silicon collector and emitter and wherein a surface of said base is insulated by a ternary oxide of said alloy.
13. The transistor of claim 12 wherein the alloy is Six Ge1-x in which 0<x<1 and the oxide is Six Ge1-x Oy in which 0<y≦2.
14. A heterostructure bipolar transistor having a collector, base, and emitter formed of a doped Group IV alloy base disposed between a silicon collector and emitter and wherein a surface of said base is insulated by a ternary nitride of said alloy.
15. The transistor of claim 14 wherein the alloy is Six Ge1-x which 0<x<1 and the nitride is Six Ge1-xl Nz in which 0<x<4.
16. An integrated structure comprised of a heterojunction bipolar transistor (HBT) device and a complementary metal insulator semiconductor (CMIS) device formed on a common substrate and wherein:
a) the HBT comprises:
(i) a collector, base, and emitter formed of a doped Group IV alloy base disposed between a silicon collector and emitter and wherein a surface of the base is insulated by a material taken from the group comprising a ternary oxide, a ternary nitride, or a quaternary oxynitride of said alloy;
b) the CMIS device comprises a pair of metal insulator semiconductor devices formed laterally adjacent each other and each having;
(i) a source and drain region separated by a channel region and wherein said regions are formed of a heteroepitaxial Group IV alloy on a substrate, and
(ii) a gate electrode over said channel region and insulated therefrom by a material taken from the group comprising a ternary oxide, a ternary nitride, or a quaternary oxynitride of said alloy.
17. The integrated structure of claim 16 wherein the Group IV alloy is Six Ge1-x and 0<x<1.
Group IV semiconductors form an important class of electronic materials which can be used to implement new, high mobility devices. These materials include in particular, Si, Ge and their alloys, (Six Ge1-x) wherein 0<x <1. Most of the research and development on (Six Ge1-x) devices has focused on the creation of high quality heteroepitaxial (Six Ge1-x) layers on Si substrates to take advantage of the higher carrier mobilities provided by Ge (3900ν1500 electron mobility cm2 /V-sec at 300K°) and to engineer bandgap properties. The bandgap of Si is 1.1 eV and Ge is 0.7 eV, therefore, Six Ge1-x alloys can be formed having bandgaps intermediate these values. Stacked or layered structures of Si/Ge alloys can be used to form quantum wells. One of the keypoints of such research is the choice of the alloy composition, which determines both the bandgap and the limits of heteroepitaxy: the larger the amount of Ge, the more difficult the elimination of defects. Another keypoint is the kinetic path and/or the processing sequence by which these materials are grown. Since these heteroepitaxial structures are metastable, the choice of the kinetic path or processing sequence determines the limit on the microstructural perfection of both the interface and the (Six Ge1-x) layer. Once the basic Six Ge1-x structures are grown to a high degree of perfection they still need to be processed further to be made into operational devices. However, the metastability of these structures strongly limits thermal processing required to convert these structures into devices.
Promising results for (Six Ge1-x) manufacturing technology have previously been demonstrated: a (Si0.8 Ge0.2)/Si Heterojunction Bipolar Transistor (HBT) with a gain four times larger than that of a Si homojunction bipolar transistor was fabricated at Stanford University in 1988 [C. A. King, J. L. Hoyt, C. M. Gronet, J. F. Gibbons, M. P. Scott and J. Turner, IEEE Elec. Dev. Lett., 10, 52, (1989)]. But little progress has been made in the specific area of processing (Six Ge1-x) heterostructures for the purpose of integrating devices. One important problem is the formation of an adequate passivation layer and a good quality dielectric on heteroepitaxial (Six Ge1-x) structures. Typical passivation layers and dielectrics for silicon based devices are silicon nitrides and silicon oxides. But presently those skilled in the art have been frustrated in attempts to grow oxides and nitrides of Six Ge1-x. For example, if Six Ge1-x structures are subjected to conventional thermal oxidation, the (Six Ge1-x) decompose and the bandgap engineering is lost [O. W. Holland, C. W. White and D. Fathy, Appl. Phys. Lett., 51 (7), 520-2 (1987)]. The authors of the above-reference report that during steam oxidation of Ge ions in Si "the implanted Ge is totally rejected by the growing oxide leading to the formation of an almost pure layer of Ge between the oxide and underlying Si." p. 520. More recently, LeGoues et al. Appl. Phys. Lett. (7) p. 644 (1989) attempted to oxidize Six Ge1-x formed by UHVCVD at 550 C. The samples were oxidized in steam at 800° C. and by dry O2 at 800° and 1000° C. with the same result--Ge is rejected from the oxide and piled up at the SiO2 /Si interface.
U.S. Pat. No. 4,800,100 issued 24 January 1989 to Herbots et al. and Herbots et al. in AVS4, AIP Vol. 167, pp 229-250 (1988) "Semiconductor-Based Heterostructure Formation Using Low Energy Ion Beams: Ion Beam Deposition (IBD) and Combined Ion Beam Deposition (CIMD)" disclose a process for growing thin films by using simultaneously, concurrently, or sequentially molecular beam evaporation (MBE) and ion beam deposition (IBD) within a single chamber i.e. without breaking vacuum. They also disclose a number of potential uses of the CIMD process for growing oxides or nitrides, such as, oxides of GaAs; Ge based oxides, and silicon oxides, nitrides, or oxynitrides, formed on germanium or aluminum arsenide substrates with atomically sharp interfaces. In the growth of these materials by CIMD, the oxygen species is provided by the ion beam and the other species by molecular beams.
According to Herbots et al. a typical process would proceed as follows:
(a) GaAs is supplied from a Ga molecular beam and As from molecular beam to form a GaAs film on a substrate.
(b) The molecular beams are switched "off" while, simultaneously, an oxygen or nitrogen ion beam is switched "on" and an Si molecular beam, also switched "on". A low temperature Si oxide or nitride is thereby deposited on the GaAs substrate, forming a heterodielectric structure. Other examples suggested comprise Si oxides or nitrides on Ge, InP, AIGaAs, and CdTe.
Recently, oxidation of stable phase pure Si has been accomplished, "Todorov et al., IEEE Electron Device Letters, Vol. EDL-7, No. 8 Aug. 1986, Herbots et al., AIP Vol. 167 supra. But the formation of oxides and nitrides on a completely metastable material, such as, Six Ge1-x /Si heteroepitaxial films is much more difficult. The Six Ge1-x films decompose under thermal treatment and their behavior is unpredictable due to their non-equilibrium nature. For example, one could have expected that the Si in the Si-Ge alloy would have enhanced thermal oxidation if the SiGe were in the equilibrium phase. However, as noted above, the opposite occurs and the alloy decomposes.
This process limitation is critical if silicon germanium alloys are to be used in Metal Oxide Silicon (MOS) technology for high speed digital electronics. Indeed, if the channel region of a MOS Field Effect Transistor (MOSFET) is made of (Six Ge1-x) to take advantage of the high carrier mobilities of the material, a solution must be found to the problem of growing a reliable dielectric gate material with a good quality interface on top of it.
A need exists therefore for a process of reliably forming an oxide or nitride of a Group IV alloy such as Six Ge1-x for the reasons stated above.
The invention in general comprises the formation of new metastable oxides or nitrides of metastable Group IV heteroepitaxial films. More specifically, in accordance with the invention oxides of silicon germanium alloys are grown on silicon germanium alloys formed on silicon substrates [Si/Six Ge1-x)/(Six Ge1-x)Oy ] also nitrides of silicon germanium alloys are grown on silicon germanium alloys formed on silicon substrates [Si/Six Ge1-x)/(Six Ge1-x)Nz ]. These structures can be used for a (Six Ge1-x)MOS device, a SiGe HBT, or for other integrated devices and combinations thereof. The oxide or nitride structures are formed in accordance with the invention using a low energy ion beam process. Silicon nitrides on silicon substrates [Si/SiNz ] and germanium nitride on germanium substrates [Ge/GeNz ] using low energy ion beams are also formed in accordance with the nitride method of the invention wherein the strain in the formed films can be predictably controlled by varying the ion beam energy and process temperature.
The method comprises introduction of oxygen or nitrogen into the grown IV semiconductor or IV semiconductor alloy using a low energy ion beam (0.15-3 keV with 0.1 to 1 keV being most preferred). The use of the ion kinetic energy allows the introduction of atomic species 0.5 to 10 nm below the surface without using high temperature processing. Because point defects created in the ion collision are mobile at room temperature, the solid reaction progresses beyond the implantation/damage region and forms an atomically sharp interface comparable to that found in thermal oxides, with film thicknesses larger than the ion range.
The Group IV elements and alloys are formed as thin films, preferably on Si, using a molecular beam epitaxy (MBE) process in a CIMD reactor. This material is then oxidized or nitridized by Ion Beam Oxidation (IBO) or Ion Beam Nitridation (IBN) respectively in situ and the oxide or nitride layer is then covered with a protective capping layer, also in situ so that the oxide or nitride layers are protected from the environment when removed from the reactor. Preferably, the capping layer comprises SiO2 formed of Si, deposited by MBE co-deposited with O2 from the ion beam in a CIMD chamber.
The method of the invention enables the creation of Group IV oxide and nitride materials never grown before, such as, (Six Ge1-x)Oy, (Six Ge1-x)Nz, GeN. and SiNz, It is contemplated that other Group IV alloys, such as, SiC, SiSn, GeSn can be oxidized or nitrized in this manner. These materials are unique in their compositions, their homogeneity, and in their controlled thicknesses and clean interfaces. The process used to grow these materials occurs at relatively low temperatures (300K to 700K). The direct ion beam provides the deposited species in an Ultra High Vacuum (UHV) environment. The growth of SiGe oxides by IBO has the potential of making a strong impact in the integration of (Six Ge1-x) structures and (Six Ge1-x) based devices.
Specifically, the growth of insulators on (Six Ge1-x) makes possible the fabrication of MIS (Metal-Insulator-Semiconductor) devices using the ion beam formed insulator as the gate dielectric. It also makes possible the patterning and passivation of multi-layer structures used for (Six Ge1-x)-based HBTs. Used in tandem, the combination of (Six Ge1-x) based MIS-devices and HBT technology will result in a truly integrated hybrid technology, resulting in the combination of high-speed, high-gain and low power complementary devices.
Nitrides formed using ion beam nitridation are superior to conventional nitrides in their mechanical properties such as homogeneity, strength and adherence. In addition, a room temperature process for encapsulation is preferred over a higher temperature process. The low temperature synthesis of a silicon nitride phase also makes possible a new method of encapsulation, the process used to protect devices from environment-induced degradation.
FIG. 1a-1d is a schematic cross-sectional flow diagram of the main steps in a process for forming N-type MOSFETS in accordance with the invention.
FIG. 2 is a schematic cross-section of a SiGe HBT in accordance with the invention.
FIG. 3A is a schematic cross-section of a precursor structure for a SiGe Bipolar Transistor and CMOS (BICMOS) formed on a single substrate.
FIG. 3B is a schematic cross-section of the completed structure of FIG. 3A.
FIG. 4 is a plot of SiN thickness (□) versus ion beam energy level and amount of nitridation (a/o) labelled Δ.
FIG. 5 is a plot of amount of nitridation versus ion beam energy level for various structures.
FIG. 6 is a plot of wafer curvature (Arc Height) in Å versus temperature for IBN of Si with 200 eV and 100 eV.
FIG. 7 is a plot of stress in dyne/cm2 versus temperature in ° C. for IBN of Si using N ions at 200 eV and 100 eV.
FIG. 8 is a plot of the material composition of Six Ge1-x where x=0.8 after IBO for different energy levels.
FIG. 9 is a pilot of the percent Ge retained after IBO versus energy, level for oxidized Ge curve ( ) and total Ge curve (O).
FIG. 10 is a plot of composition of Si samples oxidized by IBO at various energy levels.
FIG. 11 is a plot of oxide thickness per energy level of the samples of FIG. 10 as measured by various techniques.
Referring now the FIGS. 1aand 1d a preferred method of the invention will be described in connection therewith.
The method will be illustrated by the formation of a Group IV alloy thin film 14 on a suitable substrate 10 wherein by way of example the film is formed of Six Ge1-x wherein 0<x<1 and the substrate is formed of Si since such a combination is highly desirable for high speed integrated circuit applications. It is to be understood however that any Group IV alloy may be formed and oxidized or nitrized in accordance with the invention. Other potential Group IV alloys include any alloy combination of C, Si, Ti, Ge Zr, Sn and Hf although presently Six Ge1-x has the greatest potential for semiconductor applications.
A silicon wafer 10 is cleaned and dried and quickly loaded into a Combined Ion Beam Molecular Beam Deposition (CIMD) chamber of the type described in the Herbot et al. U.S. Pat. No. 4,800,100 (incorporated herein by reference) at an ultra high vacuum of 10-9 to 10-10 Torr. An optional buffer layer 12 of 0.1 microns thick epitaxial silicon is formed by MBE on wafer 12. Next, an alloy layer 14 of 0.1 microns thick Six /Ge1-x with X=0.8 is deposited by simultaneous MBE of Si and Ge at a wafer temperature of 500°-550° C.
Without breaking vacuum, the alloy layer 14 is oxidized by IBO using O+ or O2 ions to oxidize layer 14 to a depth of about 0.01 microns forming oxide layer 16. The oxide can be formed at a wafer temperature ranging from a room temperature of 300K to 900K, with oxygen ion energies between 0.015 and 3 keV, although best results are obtained at lower energies in the order of 100 to 200 eV.
A capping layer 18 of 0.02 microns thick SiO2 is formed over the oxide layer 16 promptly thereafter by IBO and Si MBE (CIMD). Layer 18 is a protective layer which allows the structure to be removed from the UHV chamber for processing into devices without damaging the oxides 18 & 16.
An optional layer 20 of polysilicon may be formed by MBE on layer 18 as shown in dotted lines in FIG. 1a before removal from the chamber. This polysilicon layer may be used as the gate electrode for MOSFET devices in a self-aligned gate process, as will be shown in connection with FIGS. 1b-1d.
To form N-type MOSFETS 100 and 102, first the polysilicon is etched except where gate electrodes 20' are to be formed, using well known photolithographic techniques. Source 26, gate 20" and drain 24 regions are then formed by ion beam implantation with impurities of suitable conductivity. Alternatively, the electrode regions may be doped during CIMD formation of the films by co-depositing dopants from an MBE source.
For N-MOS structures 100,102, n-type impurities such as phosphorous atoms would be implanted to dope the structure to n-type conductivity down to the substrate 10. Note: It is assumed that the substrate wafer is p-type as supplied. If not p-type donors, such as boron may be implanted initially to form a p-type substrate.
The polysilicon gate 20" acts as a mask preventing implantation of n-type ions beneath the gate 20" thereby forming a p-type channel region 60 between the source 26 and drain 24. As shown in FIG. 1c, a trench 104 may be formed between devices 100 and 102; such as by reactive ion etching to isolate devices.
A thick isolation oxide layer 28 is then formed, as by a Low Temperature Oxidation (LTO) process or CIMD, over the structure. Layer 28 is selectively etched away down to the device electrode regions and contacts 34, 32 and 30 are formed by a conventional metal evaporation process to complete the device structure.
As shown in FIG. 2 a Group IV alloy based heterojunction n-p-n bipolar transistor (HBT) 50 can also be formed in accordance with the invention. In FIG. 2 the precursor structure is a p-doped Si substrate 110 supplied with an n-type isolation well 112. Successive layers of n-doped Si, p+doped SiGe and n-doped Si are formed on substrate 110 by MBE in a CIMD chamber and the layers etched away on all sides to form a mesa with collector 114, base 115, and emitter 117 regions.
The exposed mesa structure is then subjected to IBO in situ forming an Six Ge1-x Ox layer 116 on the sidewall of base 115 and an SiO2 layer 118 over the side-walls of the emitter 117 and collector 114. When layer 116 achieves a sufficient thickness Si is added by MBE and combines with the O2 ion beam to form a protective SiO2 layer 118 over the mesa structure. An LTO layer of thick oxide 128 is then formed over the structure and etched away to expose contact regions for diffusing or implanting dopants to form ohmic contacts 120, 122, 124 to the emitter, base and collector regions 117, 115, 114 respectively.
FIG. 3A illustrates a precursor structure for the BICMOS structure 90 shown in cross-section in FIG. 3B. The structure 90 consists of successive layers of n Si 114', SiGe 14', P+SiGe and n-type Si 117' formed on P-type Si substrate 10' formed with n-type wells 112'.
FIG. 3B illustrates the completed structure comprising a bipolar transistor 50' and a complementary MOS structure of p-n-p MOS device 100' laterally disposed opposite n-p-n MOS device 102' on a Si substrate forming an integrated BICMOS device of a Group IV alloy in accordance with an alternate embodiment of the invention.
The structures of the CMOS device comprising MOS devices 100' and 102' are fabricated as in FIG. 1 except that an n-well 112' is included in the substrate for isolation because the conductivity of the channel 60' is reversed to p-type conductivity for the n-p-n MOS device 100'. The layers 114', 14', 115' and 117' for both devices are formed simultaneously by CIMD and afterwards processing of each device may be accomplished separately as required. While the CMOS devices 100' and 102' are being fabricated the Bipolar transistor region may be masked in situ and then processed as in FIG. 2 while the CMOS region is covered. This is made possible by the low temperature nature of the CIMD process which does not adversely affect previously formed devices. Note that bipolar transistor 50' has an added layer 14' not found in FIG. 2. This layer is not needed in the bipolar transistor, but is required for the channel 60' of the CMOS devices.
Table I below summarizes experimental data for producing IBN of Si, Ge, SiGe and IBO of Si and Ge at various ion beam energy levels i.e. 100, 200, 500, 1000 eV and the resulting % of the various constituents formed thereby.
TABLE I______________________________________Energy 100 200 500 1,000______________________________________IBN Si% Si 50 47 45 45.5% N 50 53 55 54.5% Si--N 75 82.5 91 95.4N/Si 1.38 1.37 1.34 1.25IBN Ge% Ge 62 64.6 73 75% N 38 35.4 27 25% Ge--N 38.5IBN SiGe% Si 42.8 41.5 44 44.8% Ge 4.8 4.5 4 3.7% N 52.4 54 52 51.5% Si--N 72.4 80 79 87.2Si Ge--N 42.9 54.4 36 53Ge/(Si + Ge) 38.5 82.5 1.34 45.5IBO Si% Si 36.5 33.5% O 63.5 66.5% Si--O 77.3 89.4O/Si 2.25 2.2IBO Ge% Ge 34% O 66% Ge--O 70O/Ge 2.8______________________________________
Heretofore silicon nitride structures have typically been formed by Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced CVD (PECVD) at low pressure. As reported in the text Electronic Materials Science: For Integrated Circuits in Si and GaAs, by Mayer et al. P. 270 Table 9.6 J. W. Mayer and S. S. Lau, "Electronics Materials Science for Integrated Circuits," MacMillan, N.Y. (1990) the stress of such films, as deposited, on Si is tensile for LPCVD and may be either compressive or tensile for PECVD. Utilizing the IBN process of the present invention low temperature nitride films can be grown without subjecting the films to strain relaxation due to thermal expansion and/or mismatch in atomic arrangement between Si3 N4 and the Si substrate which leads to cracking. The ion beam process forms films in compressive strain rather than tensile strain, as is usually found in low temperature deposited nitride films which tend to be porous. The amount of compressive strain, which is related to the ion beam compaction effect of Direct Ion Beam Nitridation (DIBN), can be adjusted by the ion beam energy, over more than order of magnitude: low energies (<100 eV) give low strain, while higher energies (>200 eV) tend to increase it. In addition, by using selective thermal anneals, the strain obtained by DIBN can be modulated from compressive to tensile or adjusted to be nihil. These strain-free nitride films have a wide range of applications, from stress-free semiconductor passivation and packaging, to coatings to nitride layers used in nanotechnology.
The low reactivity of Si nitride films, combined with the unique control of smoothness and thickness by DIBN, makes IBN nitrides uniquely suited for multilayer applications where very thin films of low reactivity and sharp and smooth interfaces are needed, such as in X-ray mirrors.
The technique used to measure strain include curvature measurements by stylus and thickness measurements by cross-section TEM microscopy. Stoichiometry is quantified by ESCA. Refraction index is measured by combining ellipsometry with cross-section TEM. The nitrides are grown by direct reaction of a low energy nitrogen ion beam with a substrate or a thin film having been grown heteroepitaxially or amorphous by MBE temperature, at liquid nitrogen temperature and in a continuous temperature range from 77 K to 1700 K.
Unique properties have been achieved using this process. The stoichiometry and thickness of the nitride films can be controlled independently by temperature and ion energy as shown in the plots of FIGS. 4 & 5. It can be seen that the amount of N (FIG. 4) and nitrided Si (FIG. 5) increases as a function of E, resulting in differences in atomic density, atomic structure, and strain at the interface. This has important implication in strain control in nitride films grown over Si substrate films for instance.
Directly ion beam grown films with a well controlled directionality (normal incidence) and ion energy have highly reproducible and controllable properties, especially in regard to atomic density.
This is shown in FIGS. 6 and 7 where the amount of stress in a nitride film is shown to decrease linearly with processing temperature for a given energy, from a very high value of compression to tensile. The plots also show a variation of one and a half order magnitude in stress for a given temperature by simply changing the energy of deposition.
The plot of FIG. 6 illustrates how the stress in a SiN film formed on a Si (100) substrate by IBN may be predictably varied from tensile to compressive over a wide range by adjusting the temperature and energy of deposition, or by a thermal anneal after deposition at a reflected energy and temperature. The same procedure can be used to adjust the electronic properties, such as interface density of states of IBO and CIMD oxides of Group IV alloys on heterostructures.
FIG. 8 is a plot of the material composition of Six Ge1-x where x =0.8 after IBO for different energy levels.
FIG. 9 is a plot of the percent Ge retained after IBO versus energy level for oxidized Ge curve () and total Ge curve (0).
FIG. 10 is a plot of composition of Si samples oxidized by IBO at various energy levels.
FIG. 11 is a plot of oxide thickness per energy level of the samples of FIG. 10 as measured by various techniques.
This completes the description of the preferred embodiments of the invention. Those skilled in the art will recognize, or be able to ascertain, using more than routine experimentation, many equivalents to the specific embodiments of the invention described herein.
These and all other equivalents are intended to be encompassed by the following claims.
For example N or N2 may be substituted for O+ or O2 ions in the embodiments of FIGS. 1-3 to form nitride insulators of Si2 Ge1-x in the MOS, CMOS, HBT and BICMOS structures.
Also, oxynitrides can be formed by this method by alternating N, O or N2 and O2 gas in the ion source. Another structure that can be formed is an oxide/nitride/oxide multilayer taking advantage of superior electronic properties of oxide interfaces versus superior dielectric strength in the bulk for nitrides and vice versa.
The method of adjusting stress in nitrides can also be applied to oxides to adjust stress and electronic properties.
It is also important to note that the layer thickness formed by the IBO and IBN process can be made self-limiting by controlling the energy level and/or wafer temperature and if thicker layers are desired, the process can be switched to use of an MBE deposited specie. Finally, while the layers formed using the properly prepared suitable substrates are generally epitaxial, as formed, amorphous films can be formed using very low temperatures.
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