text:
It's All About Design
A well-designed publication presents your message in an organized and attractive way. It attracts attention, holds interest and inspires the reader to action. Design involves size, number of pages, layout, illustrations and photographs, type, paper and ink color. You and University Marketing will collaborate on these matters, considering your special communication needs.
The audience, format, purpose and budget of your publication, as well as your own ideas, will be important considerations. The design will fit within the graphics standards adopted by CLU. Following these standards helps ensure that the image of the University remains consistent. The graphics standards are flexible and allow creativity.
Because of our volume planning is the key to the on-time project completion which of paramount importance to us all. The project guidelines are designed to help you with the planning and scheduling of your projects. For the benefit of the University and your office in particular we request that you plan your project in accordance with these guidelines.


text: Lisa Ostrikoff Video: Want an online audience? Twitter users are a goldmine Add to ... Lisa Ostrikoff Special to The Globe and Mail Published Wednesday, Sep. 12, 2012 4:53PM EDT Last updated Wednesday, Oct. 10, 2012 12:52PM EDT BizBOXTV creator Lisa Ostrikoff covers the latest research in the digital domain, including the rise of smartphone privacy awareness, productivity in the work-from-home space and the increase in surfing by Twitter users in this new video series for The Report on Small Business Watch More Video: How the 'belly-button challenge' is heating up on social media Olympic gold medallist using Twitter to name baby Apple's new tune: Music service kicks off today Justin Trudeau: Liberals would put a 'price' on carbon if elected Market Call Tonight: Top Picks from Northland's David Cockfield Autonomous cars have close call in California MTV revamp wants users to upload their own videos World's first commercial jetpack set for 2016 launch Rogers-Mobilicity deal: The implications Mobile payments set to gain traction in Canada BlackBerry reports: Street-level analysis This cockroach robot uses its shell to overcome obstacles Rogers and Telus in the hunt for Mobilicity Altice eyes Bouygues in telco expansion Drones, missiles, and fighter jets at Paris Airshow Will the Fitbit novelty wear off? Robot designed to recognize human emotions unveiled in Japan Regina barbershop apologizes to woman refused haircut St. Louis Cardinals investigated for hacking into computers of Houston Astros MLB on hacking: 'This is ongoing investigation' Comments AA More Related to this Story Social media Video: Practical tips for small business owners new to social media Gary Vaynerchuk Video: Gary Vaynerchuk reveals passions and regrets Inside Jobs Video: From Oreos to Pop Tarts, vendors deep fry 'almost anything'

subset: commoncrawl


text:
Eating disorders remain one of the most troubling health problems in the country. Yoplait yogurt released a new advertisement that the National Eating Disorders Association (NEDA) felt was offensive. In the 30-second clip, a woman has an internal discussion with herself that certainly seems to resemble what someone struggling with an eating disorder might think.
In it, the woman eyes a piece of cheesecake and says "What if I just had a small slice? I was good today. I deserve it!' To Yoplait's credit, though, the company agreed to remove the advertisement from television as soon as possible after hearing the concerns of NEDA.
NEDA president and CEO Lynn Grefe said of the decision, "The language in this advertising campaign was seriously problematic for those affected by eating disorders and anyone who may have a predisposition towards developing one. We applaud Yoplait and General Mills for taking the time to speak with us, listening to our concerns and their quick action to provide a solution. I believe the company had no intent to harm and gained insight into a very serious issue that we hope will influence their marketing decisions in the future."
What do you think of the advertisement (seen above)? Did Yoplait make the right decision?
Image Sources:
December 31, 2011
Not offensive. We women frequently make jokes like this when we choose to indulge. (If a cookie breaks, the calories fall out, eh?) That's not having an eating disorder. It's female bonding! As for rationalizing cheesecake, if I want a slice, it better darn well be full sized with lots of topping. Yoplait will just not suffice. To me it's a breakfast (maybe lunch) food, not a dessert.
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text: I use my Arca-Swiss monoball with my LF camera (in fact, all my cameras). It's quite a beast, well-engineered and I find I have no problems with it all. Someone made a comment about the contact area between ball head and camera - I have a Manfrotto quick release on the top (hexagon style) and this gives a large surface area.


text:
Advanced techniques for programmable photolithography provide enhanced resolution and can image features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask may be used to engineer the wavefronts of the light striking the resist to achieve better resolution.
1. A method of patterning a wafer that is at least in part coated with a layer comprising a non-integrating photoresist to achieve superresolution, comprising:
at least partially coating said wafer with a non-integrating photoresist;
configuring an array of programmable pixels with a first pattern;
performing at least a first exposure with said first pattern, said first exposure comprising directing energy along a path toward said wafer through said array of programmable pixels configured with said first pattern, said directed energy having a first energy distribution including center spots and associated side lobes;
providing, in said path, at least one apodizing aperture, said at least one apodizing aperture modifying the phase and/or amplitude of said first energy distribution, resulting in narrower center spots and larger associated side lobes as compared to said first energy distribution;
said center spots of said modified energy distribution at least partially exposing said non-integrating photoresist, said side lobes of said modified energy distribution substantially not exposing said non-integrating photoresist;
moving said wafer relative to said array of programmable pixels;
configuring said array of programmable pixels with at least a second pattern;
performing at least a second exposure with said second pattern, said second exposure comprising directing energy along a path toward said wafer through said array of programmable pixels configured with said second pattern, said directed energy having a second energy distribution including center spots and associated side lobes;
said at least one apodizing aperture provided in said path modifying the phase and/or amplitude of said second energy distribution, resulting in narrower center spots and larger side lobes as compared to said second energy distribution;
said center spots of said modified second energy distribution at least partially exposing said non-integrating photoresist, said side lobes of said modified second energy distributions substantially not exposing said non-integrating photoresist; and
further processing said wafer to create a structure corresponding to the patterns of at least the first and second exposures.
2. The method of
3. A system for exposing a wafer that is at least in part coated with a layer comprising a non-integrating photoresist, to achieve superresolution, comprising:
an array of programmable pixels;
means for programming said array;
an energy source that directs energy along a path toward said wafer through said programmable pixel array;
said directed energy having an energy distribution including center spots and associated side lobes;
at least one apodizing aperture disposed in said path, said apodizing aperture modifying the phase and/or amplitude of said energy directed toward said wafer resulting in narrower center spots and larger side lobes as compared to said unmodified energy distribute on, said modified energy at least partially exposing said non-integrating photoresist
means for moving said wafer relative to said programmable pixel array; and
means for reprogramming said array.
4. The system of
This is a divisional application of application Ser. No. 11/315,136 filed Dec. 23, 2005, to be abandoned, which application is a divisional application of application Ser. No 10/283,322 filed Oct. 30, 2002 now U.S. Pat. No. 7,050,155 issued May 23, 2006, which application claims priority from the following US provisional patent applications each of which is incorporated by reference herein as if expressly set forth:
This application is also related to commonly-assigned application Ser. No. 09/871,971, now U.S. Pat. No. 6,480,261 B2, to Cooper et al. entitled "Photolithographic System For Exposing A Wafer Using A Programmable Mask" and filed Jun. 4, 2001 incorporated by reference herein.
Not applicable.
This technology herein relates to programmable mask lithography, and more particularly to the use of a programmable mask for exposing a photoresist. In more detail, the technology herein relates in at least one of its aspects to techniques for building up the desired pattern of resist exposure in a manner which permits the pattern to be created by a sequence of exposures using a programmable mask, including pattern decomposition for exposure using pixel overlap, the use of a shape library of phase shifted pixels, programmable phase shifting of pixels, and/or apodization of pixels.
By way of general background, lithography is used to transfer a specific pattern onto a surface. Lithography can be used to transfer a variety of patterns including, for example, painting, printing, and the like. More recently, lithographic techniques have become widespread for use in "microfabrication"—a major (but non-limiting) example of which is the manufacture of integrated circuits such as computer chips or semiconductor wafers.
In a typical non-limiting microfabrication operation, lithography is used to define patterns for miniature electrical circuits. Lithography defines a pattern specifying the location of metal, insulators, doped regions, and other features of a circuit printed on a silicon wafer or other substrate. The resulting semiconductor circuit can perform any of a number of different functions. For example, an entire computer can be placed on a chip.
Improvements in lithography have been mainly responsible for the explosive growth of computers in particular and the semiconductor industry in general. The major improvements in lithography are mainly a result of a decrease in the minimum feature size (improvement in resolution). This improvement allows for an increase in the number of transistors on a single chip (and in the speed at which these transistors can operate). For example, the computer circuitry that would have filled an entire room in 1960's technology can now be placed on a silicon "die" the size of a thumbnail. A device the size of a wristwatch can contain more computing power than the largest computers of several decades ago.
One idea to improve lithography performance is to use a programmable mask to expose the substrate. Generally, a programmable mask is a large array of "pixels" that can be individually controlled to either be open (transmit light to the substrate) or be closed (not transmit light to the substrate). There have been several suggested mechanisms for making programmable masks. One is to use liquid crystals to rotate the polarization of light incident on a pixel. In this case only the rotated (or not rotated) polarization would be transmitted to the substrate, and the other polarization would be blocked. Another mechanism for making the pixels is to use mechanical mirrors that can move to either reflect light into or out of the optics of the lithography system. Yet another mechanism is to use electric fields to make semiconductor pixels either transparent or not transparent (pixels made using the semiconductors or liquid crystals can also be referred to as shutters). By individually controlling the shutters, any desired pattern can be easily produced and then easily changed to produce any other pattern. See for example commonly-assigned U.S. Pat. No. 6,291,110 to Cooper et al. entitled "Methods For Transferring A Two-Dimensional Programmable Exposure Pattern For Photolithography" incorporated herein by reference.
Using a programmable mask allows the lithography process to have a high throughput as in conventional parallel lithography since a large number of features are printed in each step. A non-exhaustive list of some of example and illustrative features and advantages provided by performing lithography using a programmable mask may be found in the above Cooper et al. U.S. Pat. No. 6,291,110.
While programmable masks have the potential to fundamentally improve modern photolithography, further improvements are possible and desirable to take better advantage of programmable lithographic techniques and to solve problems related to the use of programmable lithography. We have developed such improvements and enhancements in the following areas:
These various techniques can be used independently, together in any combination, and/or in combination with other techniques (e.g., photoresist exposure techniques such as disclosed in our commonly-assigned application Ser. No. 10/298,224 filed Nov. 18, 2002, now U.S. Pat. No. 6,879,376, based on provisional application No. 60/331,515 filed Nov. 19, 2001), to improve performance such as resolution of programmable photolithography.
For example, one issue that arises is the variability of feature placement and size. In conventional parallel lithography, the feature size and pitch are limited by the smallest achievable intensity profile. However, the features can be placed with an accuracy significantly greater than resolution, and can have an arbitrary size so long as it is larger than the minimum resolution. With a programmable mask, the shutters are spaced at regular intervals so it can be more difficult to place a feature with very high accuracy, or of arbitrary size. Using each shutter in a programmable mask to expose a portion of resist equal in size to the single shutter intensity profile may limit the minimum feature size to the size of the single shutter intensity profile.
One way of dealing with this is to have the exposure system do multiple exposures. In between each exposure, it is possible to move the mask a small amount relative to the wafer. A combination of multiple exposures and movement of the mask relative to the wafer may correct for defective pixels and allow one to choose the location of the feature.
Another way of dealing with feature size limitations due to pixel size and to diffraction limits is to use one (or more) darkfield exposure(s) in combination with programmable lithography, in such a way that the inherent limitations of the darkfield method (excessive space between features) is overcome. This is achieved by overlapping pixel images at the resist in such a way as to create dark regions which are closely spaced, as detailed below.
Yet another approach to improved resolution is to directly modify the single pixel intensity profile (the spatial distribution of energy at the resist due to a single shutter, or pixel) so as to improve the overall flexibility of the programmable lithography system. In certain circumstances it is advantageous to have a steep sided intensity profile, such as in the case where features are created using pixel overlap. In other circumstances it is advantageous to have a peaked intensity profile, such as in the case where feature widths are adjusted by adjusting the amount of time during which light is permitted to fall on the resist (timing control).
Another area in which programmable lithography can be improved is in the case where there is some amount of overlap (due to diffraction) between the light distribution of adjacent shutters. Depending on the pattern being exposed, this may be either desirable or undesirable. In the case where it is desirable, obviously we need do nothing. But in the case where overlap is undesirable, we can compensate for its effects by placing a phase shifting material on one or both shutters, so that the light passing through one shutter is phase-shifted, e.g. by 180 degrees, relative to the light passing through the other shutter. The light in the region of overlap then interferes destructively, reducing the total energy deposited in the overlap region. However, we cannot necessarily predict a priori whether or not we will need to phase-shift a particular set of shutters, since the same mask will be used to expose multiple patterns.
We can solve this problem of arbitrary feature size and placement by, for example, using multiple exposures with local control of the exposure timing, by the use of a phase shifted shape library, by use of pixel-by-pixel programmable phase shift, and by the use of apodization of the limiting aperture of the optical system.
For example, an illustrative method for decomposing a desired resist exposure pattern and using the decomposed pattern to perform programmable lithography involves expressing the desired resist exposure pattern in vector form, and expressing the relationship between the shutter energies and the resulting total energy delivered to the various regions of the resist as a matrix. The pseudo-inverse of the matrix is then calculated, and applied to the desired resist exposure pattern in vector form in order to generate a vector representing the shutter exposure energies. A mask is programmed using the generated shutter exposure energy vector. Electromagnetic energy is then passed through the programmed mask to expose a substrate having resist disposed thereon.
Another example non-limiting method for exposing a resist by use of programmable lithography involves the use of a library of shapes. These shapes can for example be created by the use of phase shifting or other means. The desired pattern of resist exposure is built up by successive exposures of the resist, with possible relative movement of the programmable mask and the wafer between exposures.
A material with changeable refractive index can be applied to the shutters of a programmable mask, or on a separate submask interposed between the programmable mask and the resist, such that the phase of the light from an individual shutter may be programmably changed so as to modify the intensity distribution of light impinging upon the resist.
A material can be applied to the limiting aperture of a lithography system, with specified refractive index and transparency such that the phase and amplitude of the light passing through the limiting aperture are modified so as to create features on the resist smaller than the features created by the system in the absence of said material.
These and other features and advantages will be better and more completely understood by referring to the following detailed description of exemplary non-limiting illustrative implementations in conjunction with the drawings of which:
Exemplary Illustrative Non-Limiting Pattern Decomposition Techniques, Methods and Systems
In an illustrative and exemplary non-limiting implementations, we use a combination of multiple exposures and movement of the mask relative to the wafer to overlap single shutter exposures to create features smaller than the single shutter intensity profile (sub-pixel resolution). An example process for doing this is illustrated in
The examples given so far have all been one dimensional. However, the resist pattern we want is inherently two dimensional, so the problem is appreciably more complex, since there is risk of overlap between many more shutter exposures in even the simplest case.
Exemplary Illustrative Non-Limiting Photolithographic System Including Shutter Timing Control to Prevent Unwanted Features
In the exemplary illustrative non-limiting implementation, programmable mask M may be of the type described in U.S. Pat. No. 6,291,110 referenced above. Generally, this programmable mask is an array of shutters used to expose a resist or other substrate. Each shutter in the programmable mask M preferred implementation comprises a single light modulating element on the programmable mask. In one example implementation, this single light modulating element may comprise a wide band gap semiconductor with an opacity that may be changed by an applied electric field. However, in other implementations, a shutter may comprise a micromirror, a wide band gap semiconductor in transmission mode or in reflection mode, or any other means of modulating light.
In the exemplary illustrative non-limiting implementation, the exposure system permits the pattern of electromagnetic radiation to pass through the programmable mask M at a given position. In general, the mask M and/or the substrate S is moved and multiple exposures made in order to create a desired pattern. In the exemplary non-limiting implementation, a resist pattern (i.e., the pattern on the photoresist of areas exposed to electromagnetic energy) is formed.
The exemplary illustrative non-limiting implementation controls the intensity profile of the pattern of light that is passed through the mask M to the substrate S. The resulting resist pattern results from selective exposure of areas of the substrate to light intensities above and below a predetermined threshold. Generally, a photo-resist will change its physical and/or chemical properties when it receives electromagnetic energy exposure above a certain intensity threshold. The exemplary illustrative non-limiting implementation takes advantage of this threshold by in some cases providing exposure of the resist while ensuring that in the regions of overlap between pixels, where a feature is wanted, the combined effect of the exposures from the pixels contributing to the overlap region is enough to result in exposure of the resist above the threshold, while in those regions of overlap where no feature is wanted, the combined exposures from the pixels contributing to said region is below the threshold for change in the physical or chemical properties of the resist.
Example Intensity Control Technique
For concreteness, let's look at a specific illustrative but non-limiting example of how computer C determines the programmable configuration of shutters of programmable mask M to achieve sub-pixel resolution. Let the desired resist pattern lie on a 3 by 3 grid, with an L shaped feature to be exposed. We'll assume that the size of the single shutter exposure pattern is twice the size of an individual grid square (side length—four times the area—see
Since we have 9 grid units in this example, we will have 9 equations, each with 4 unknowns (for each of the 4 exposures per grid unit). Example overlap of shutters with grid units is shown in
From the grid unit exposure equations we can construct the matrix equation:
By means discussed in the next section, we construct a matrix, {tilde over (X)}:
Now we need to come up with some numbers: let the exposed grid elements (G2, G5, G6 ) have a target exposure value of 1.2 (taking 1 a the threshold) and assign all the others a value of 0.6. Multiplying {right arrow over (G)} by {tilde over (X)} we obtain an estimate for {right arrow over (E)} (why this works will be clarified below).
Obviously E4=−0.15 is unacceptable, since it means we have a negative exposure energy, which is impossible. Since we don't care about details of grid element exposure (the numbers chosen earlier were only for concreteness, so we could calculate exposure values), only whether it is above or below threshold we can simply set the offending element to zero, calculate the grid exposure, and see if the result is satisfactory. Setting E4=0 and carrying out the matrix multiplication, we find
We start with a desired pattern to be projected onto a resist using a programmable mask. For now we make the following assumptions:
These requirements are imposed purely to simplify the presentation of the technique in an illustrative, non-limiting example. They may be relaxed or changed in different contexts depending on requirements. Further discussion of the effect of relaxing these assumptions is set forth below in this document.
The process of exposing the desired pattern involves moving the mask to an initial position, opening the shutters for the appropriate time (or number of pulses of the light source if pulsed), and then moving to the next position and repeating the process. In each step each shutter may be open for a different amount of time, independent of what neighboring shutters are doing, so that the exposure dose is controlled shutter by shutter. It is this individual shutter exposure dose that we wish to calculate, based on the desired resist pattern.
Example Technique for Finding Exposure Values
In order to find the desired value of the individual shutter energies at each mask position, we start by assigning a variable to each such energy: E1, E2, . . . Eq. Next we apply the constraints—for each grid square, let the desired total energy be G, so that we have a set G1, G2, . . . , Gm, where m is the total number of grid squares.
This set of coupled equations may be solved using the technique of matrix inversion (though note that at this point we have not assigned any values to the grid exposure variables G). We may write the equations in matrix form as
The matrix {tilde over (X)} may be found using well known techniques (for example, the Mathematica function Pseudolnverse
÷{tilde over (X)}�{right arrow over (G)}={right arrow over (G)}
This condition is satisfied if {right arrow over (G)} is an eigenvector of {tilde over (M)}=÷{tilde over (X)} with eigenvalue 1. Fortunately, {tilde over (M)} is idempotent, so it has only two eigenvalues, 1 and 0, and the eigenspace of the unit eigenvalue is the column space of {tilde over (M)}. This allows us to easily assess whether or not we can create the whole desired pattern in a single set of exposures, or whether we need to do one set of exposures, etch, reapply resist, and expose the remainder of the pattern. Assuming we find {tilde over (X)} by known methods, we calculate {tilde over (M)}, and project {right arrow over (G)} onto the rowspace of {tilde over (M)}. If we find that {right arrow over (G)} is in the rowspace of {tilde over (M)}, then we know we can create the desired pattern in a single set of exposures. We then use the freedom offered by {right arrow over (T)} to tweak the shutter energies to optimize the resist exposure pattern (and to ensure that all shutter energies are positive). If {right arrow over (G)} is not in the rowspace of {tilde over (M)}, then we will need multiple expose/etch cycles. The only caveat is that if we cannot ensure that all exposure energies are positive by using the freedom given by {right arrow over (T)}, or by adjusting the values in {right arrow over (G)}, then we will need to break the pattern down further.
The matrix � may be very large (on the order of 1010 elements), so inversion by non-optimized techniques is likely to take too long to be of any practical use. Fortunately, � is sparse, and there is regularity in the ordering of the nonzero elements, so fast inversion routines may be used which yield a result quickly. In addition, due to the fact that the exposure pattern will probably require some tweaking after initial determination of the pattern, we can use approximate methods for inversion, leading to still greater reductions in time required to compute the generalized inverse. Fast routines for finding the pseudo inverse based on regularities in the matrix being inverted are known, as are fast routines for finding approximations to the pseudo inverse.
Finally, some comments on the nature of {tilde over (T)}—this is the vector that permits tweaking of the solution: In practice, the thing we add to the solution in our exemplary illustrative non-limiting implementation is not {tilde over (T)}, but (Ĩ−÷{tilde over (X)})�{tilde over (T)}. This vector has no effect on the derived values for {right arrow over (E)} because it lies in the null space of the operator �. The operator (Ĩ−÷{tilde over (X)}) projects any vector into the null space of �. With this observation, we can simplify the equation for a solution to {right arrow over (E)}={tilde over (X)}�{right arrow over (G)}+{right arrow over (T)}N(A), where {tilde over (T)}N(A) is any vector lying in the null space of �. Using standard techniques we can calculate a set of vectors spanning the null space of �, and therefore construct a basis for {tilde over (T)}N(A). It is entirely possible that our pseudo inverse is such that there is no null space (i.e. ÷{tilde over (X)}=Ĩ), in which case we have to turn to other methods of tweaking the exposure values, such as adjusting the grid pattern vector {right arrow over (G)} for example.
Example Pattern Decomposition Process
Example Relaxation of Illustrative Constraints
We now return to the assumptions made at the beginning and examine how relaxing them affects the technique presented above. Examining each assumption in order:
The technique of wavefront engineering provides for closer control of the light intensity pattern at the resist surface. This precise control is attained by selectively shifting the phase of the light and correcting for proximity effects so as to improve depth of focus and reduce feature size.
The light passing through a clear area of the mask will spread out due to diffraction as it passes through the optical system to the resist. The limit on the separation of adjacent features due to diffraction is given by the lithographer's equation
The image formed at the resist consists of the convolution of the (demagnified) image of the mask (or pixel) with the imaging system point spread function. In classical lithography (and microscopy/telescopy) the imaging system point spread function is the Airy disc. The Airy disc produces a small central spot containing most of the power, with very small wings, and it is derived from an imaging system with a clear circular aperture.
One way that features substantially smaller than the wavelength of light can be created is by using not the light to create the features, but rather the dark spaces between light patches. This technique is called darkfield exposure. The obvious drawback of using darkfield to create features is that the minimum separation of features (the pitch) is the width of the bright spots on either side, which are still constrained by the lithographer's equation. In order to use darkfield exposure to create narrow features it is desirable in one exemplary illustrative arrangement to have very sharp edged bright regions (so that they can be placed close together while defining a clear edged dark region). One technique which has been shown to meet this criterion is to use a phase shift mask (PSM) in which the dark features are defined by phase edges. The mask in this case has regions selectively etched (or with phase shift material selectively applied) so that the net phase shift between adjacent regions is 180 degrees. The wavefronts passing through the mask then interfere destructively at the resist in regions corresponding to the lines on the mask marking the boundaries of phase shifted regions. The destructive interference produces a very narrow and sharp edged dark region which is ideal for darkfield exposure. In the literature it has been reported that features as small as ˜25 nm have been fabricated using 248 nm light. See M. Fritze, et al., "Sub-100 nm silicon on insulator complimentary metal-oxide semiconductor transistors by deep ultraviolet optical lithography," J. Vac. Sci. Technol. B 18(6) 2886-2890. The features exposed by this technique are necessarily separated by large distances, as explained above.
Programmable Phase Shift Mask with Shape Library
The combination of phase shifting and programmable lithography enables the rapid and convenient exposure of large, complex patterns with a minimum of difficulty, and with a substantial improvement in resolution. As an example (non-limiting) implementation, consider a programmable mask consisting of an array of square shutters with phase shift material applied to them so that the pattern of light and dark at the resist is as shown in
In order to explain how to place darkfield features closer together than the width of the adjacent bright patches, we need to look closer at how the phase shift mask produces narrow lines.
An exemplary process is illustrated in
The phase shifting produces an amplitude pattern as in the upper plot of the figure, with a resulting intensity pattern as in the lower plot. Because the resist responds to intensity rather than amplitude, a narrow gap is formed between the peaks. This gap defines the width of the dark field exposed feature. The region outside the intensity pattern also remains unexposed in this example—this will be addressed below.
In one exemplary arrangement, it is desirable that the resist 'remembers' the intensity of the light to which it has been exposed, even though the intensity may not have exceeded the threshold for exposure. Variations on this technique may use advanced resists (i.e., non-integrating photoresists) that do not integrate the total light dose, but for the purposes of this illustrative discussion we restrict ourselves to a simple resist which integrates the total intensity to which it is exposed without regard for the details of exposure timing, etc.
Given an integrating resist and a programmable pixel with a pattern of phase shift material applied to it as in
From the figure we can see that the overlap of two successive exposures, each one individually below the threshold for the resist, can create darkfield exposed features that are closer together than would be allowed by the lithographers' equation. As in
We now have all of the elements needed to create a pattern of densely packed small features on the resist. The exemplary shapes shown in
In order to create the desired pattern on the resist the pattern must first be analyzed and broken down into a set of discrete exposures suitable for application by either overlapping or by abutting shutter patterns. Because the edges of the shutter intensity patterns are not sharp, but rather smoothly go to zero, butting shutter exposures together potentially presents some problems. The total intensity when two shutter exposures are adjacent is ideally flat at the transition region. This will not necessarily be realized in practice. For this reason one of the shutter shapes should be a simple small shape with no darkfield features. This shutter shape can then be used to smooth out the boundary region between shutter exposures. In addition this shape can be used to locally enhance the energy deposited in a given region, either to delineate a shape not already on a shutter, or to make fine adjustments in the shape projected by another shutter.
Example Variations
There are many variations on the technique presented above. The shape library need not be placed directly on the shutter. The phase shift material that creates the shapes could be placed on a diffraction limiting mask near the wafer, or on a separate mask close to the shutters, or at some other location within the optical train. Separating the phase shift material from the shutter itself makes it simpler to use a micromirror array. In addition separating the phase shift material from the shutters permits greater flexibility in that it permits custom shape library phase shift submasks to be used depending on the particular type of pattern being exposed. Different phase shift submasks may be needed because the shapes being exposed are different, or simply for process optimization, in which case the number of any given shape may vary from mask to mask, even though all shapes are present on both submasks. This allows for phase shift submasks to be selected based on which will give the greatest throughput.
The shapes in the phase shift submask library need not be those intended to be present in the final resist pattern. They may be selected so that they give the greatest flexibility when overlapped, or so that the overlap of certain shutter exposures produces desirable resist patterns. This is one possible technique for reducing the number of elements needed in the phase shift shape library, while maintaining the ability to expose the desired pattern.
Programmable Phase Shift Shutters
It is well known that there are certain materials whose refractive index depends on the applied electric field, either linearly (Pockels effect) or quadraticaly (Kerr effect). In such materials, an applied electric field modifies the manner in which light interacts with the material, so that the light passes through the material either slower or faster than it would without the applied electric field. In the case of a linear material the refractive index varies as
One illustrative arrangement places an electro-optic material (EOM) on each shutter of a programmable mask, along with electrical contacts to apply an electric field individually to the material on each shutter. The phase shift material may be used in two ways, either in a homogeneous mode (a uniform field applied across the whole of the EOM) or in an inhomogeneous mode (in which the field is non-uniform across the EOM).
Where the phase-shifting is done homogeneously, it can be used to compensate for interference between the light distributions of adjacent shutters in a manner analogous to the way PSMs are used in conventional lithography. In this case the phase-shifting is electronically controlled, so it may be used only where it is helpful. Since the programmable mask will have different shutters open at different times, the most desirable phase-shift pattern will vary depending on the pattern of shutters open and closed. Homogenous programmable phase shifting allows the phase shift pattern to be intelligently programmed to give the best results based on the particular pattern being exposed at the time.
In the case where the programmable phase shift is done inhomogeneously, the effect is to either focus or defocus the light from the shutter. In this case the advantage conveyed by the programmable phase shift is in control over the detailed shape and width of the single shutter intensity profile. In conjunction with the advanced exposure techniques described elsewhere, this provides additional flexibility, and therefore a greater degree of control over the exposure dose at the resist. Control of the single shutter intensity profile provides an additional degree of freedom which may be exploited to improve resolution, throughput, or both.
Homogeneous Phase-Shifting
Homogeneous phase-shifting corrects for the effects of overlapping nearby shutter intensity profiles, or enables the overlap to be used to create pattern elements.
From exemplary non-limiting
Inhomogeneous Phase-Shift
Inhomogeneous phase-shift allows the intensity profile of a single shutter to be individually adjusted, either to steepen the sides or to make the sides of the pattern less steep. This permits greater flexibility in the application of advanced exposure techniques.
The exemplary inhomogeneous effect shown in
Other exemplary arrangements can provide the phase shift elements in a structure that is physically separate from or integrated with the programmable mask. For example, the phase shift elements might comprise a separate plate or other structure defining an array of programmable or non-programmable (i.e., fixed refraction index) phase shift elements, or the phase shift elements and the pixels of the programmable mask can be integrated into a common structure. In one illustrative arrangement, the phase shifting structure comprises an array of phase shift elements in registry with and having correspondence (e.g., one-to-one or other correspondence) with pixel elements of a programmable mask. The phase shift elements can have fixed or programmable phase shifts. Fixed or programmable phase shifts might for example provide a "checkerboard" pattern of alternating phase shift amounts (e.g., a certain angle A, and A�180 degrees). In the case of a programmable array, the particular phase shifts being applied by particular phase shift elements in the array can be changed by applying a stimulus such as an electric field, a voltage, a current, magnetic stimulus, etc.
Sub Wavelength Pixel Images by Apodization
The image formed at the resist consists of the convolution of the (demagnified) image of the mask (or pixel) with the imaging system point spread function. In classical lithography (and microscopy/telescopy) the imaging system point spread function is the Airy disc. The Airy disc produces a small central spot containing most of the power, with very small wings, and it is derived from an imaging system with a clear circular aperture.
If we apply material to the limiting aperture which modifies the phase and amplitude of the incoming light we can reduce the size of the central spot, which can come at the cost of reducing the energy in the central spot and creating larger wings (e.g., there is a redistribution of energy from the central spot to the sidelobes). The apodization function is the phase and amplitude modulation at the limiting aperture, and it is this apodization which allows superresolution for a finite field at the image plane. In this finite field the point spread function can be substantially smaller than the Airy function and in certain cases can be approximated by a delta function. This technique has been discussed in detail by Frieden (Frieden, B. Roy, "On arbitrarily perfect imagery with a finite aperture," Optica Acta, Vol. 16, pp. 795-807, 1969) for the specific cases of microscopy and telescopy.
In the Fraunhofer approximation (low Numerical Aperture, NA) the point spread function a(x) is related to the optical pupil function U (β) through a Fourier transform:
To derive the desired pupil function, we first select the desired finite field at the image plane over which we wish to approximate a delta function. For the purposes of programmable lithography this field need not be particularly large, since we can eliminate light outside the field with a diffraction limiter or we can use a non-integrating resist such as a two-photon resist with light of the second wavelength concentrated inside the field.
The technique described here expands the desired point spread function in terms of normalized "angular functions" given by
An example illustrative apodized point spread function is shown in
In order to control the sidelobes we can either apply an additional apodization, modify the apodization we already have, or use a diffraction limiting mask close to the resist (but not necessarily in contact). If we choose to use a diffraction limiting secondary mask, we can have a standoff distance on the order of a wavelength or so, unlike the case of a diffraction limiter used with an unapodized imaging system.
The point spread function of example
Exemplary Implementation (Lithography)
The apodization techniques known in the literature (see Frieden) are generally used in purely imaging systems, i.e., systems that capture as opposed to projecting an image. In the case of programmable lithography, however, we have substantially complete control over the object being imaged onto the resist (namely the pixel). It is very likely that proper shaping of the pixel will allow for improvements in or reduce the side effects from the apodizing aperture. It may be possible to apply phase shift material and opaque material directly to the pixel itself in place of the apodizing aperture. In this concept, the pixel itself effectively becomes the apodizing aperture.
An exemplary apodization function that produces the exemplary
The phase shift can be introduced with varying thicknesses of material with a high index of refraction, such as quartz. The opacity can be implemented by applying layers of semi-opaque material in various thicknesses.
Example Implementation (Metrology)
In order to implement an apodized imaging system for metrology, we can take one of several approaches. For example, we can apodize the imaging system or we can create an apodized projection system which projects a substantially sub-wavelength spot onto the wafer or mask being imaged, and the spot is scanned to image the whole object.
In the case of an apodized imaging system, we choose the apodizing function to create a narrow central distribution with a flat region on either side. The size of this flat region dictates the maximum size of the region on the object that can be imaged at any one time. The sensor used to detect the image (for example a CCD) need be no larger than the size of this flat region. In order to image the whole of the object the imaging system must be scanned relative to the object, unless the object is so small that it fits entirely within the flat region. One possible improvement is to implement the metrology system as a series of parallel imaging systems. The individual optical columns can each have their own apodized pupil and CCD so that large wafers can be imaged efficiently.
In the case of an apodized illumination source, the source optics are apodized to produce a small (substantially sub-wavelength) spot. This spot can be scanned so as to build up a rasterized image of the object. The scattered light from the scanning spot can be detected by a CCD or other imaging device. This technique would be similar to confocal microscopy.
Example Implementation to Expose Semiconductor Wafers
Any or all of the above techniques can be used in programmable lithography using steppers or other known apparatus to expose semiconductor wafers. For example, one type of lithography that is commonly used in the mass production of computer chips is known as "parallel lithography". Parallel lithography generally prints an entire pattern (or a significant portion of a pattern) at one time. This is usually accomplished by projecting photons through a mask onto a photoresist-coated semiconductor wafer. The mask provides a template of the desired circuit. A photoresist coat, which may be a thin layer of material coated on the wafer which changes its chemical properties when impinged upon by light, is used to translate or transfer the mask template onto the semiconductor wafer. The mask allows photons (e.g., incident light) to pass through the areas defining the features but not through other areas. An example of a typical mask construction would be deposits of metal on a glass substrate. In a way analogous to the way light coming through a photographic negative exposes photographic paper, light coming through the mask exposes the photoresist. The exposed photoresist bearing the pattern selectively "resists" a further process (e.g., etching with acid, bombardment with various particles, deposition of a metallic or other layer, etc.) Thus, this lithography technique using photoresist can be used to effectively translate the pattern defined by the mask into a structural pattern on the semiconductor wafer. By repeating this technique several times on the same wafer using different masks, it is possible to build multi-layered semiconductor structures (e.g., transistors) and associated interconnecting electrical circuits.
For mass production, parallel lithography is usually done using a machine known as a "stepper." Generally, a stepper consists of a light source, a place to hold a mask, an optical system for projecting and demagnifying the image of the mask onto a photoresist-coated wafer, and a stage to move the wafer. In each exposure, a stepper only exposes a small part of the wafer, generally the size of one chip. Since there are often many separate chips on each wafer, the wafer must be exposed many times. The stepper exposes the first chip, then moves ("steps") over to expose the next chip and repeats this process until the entire wafer is exposed. This process is known as "step and repeat" and is the origin of the name "stepper."
A stepper is generally capable of precisely positioning the wafer relative to the mask. This precise positioning (overlay accuracy) is needed because each lithography step must line up with the previous layer of lithography. A stepper spends a significant portion of its time positioning the stage and the rest exposing the photoresist. Despite the great precision necessary, steppers are also capable of high throughput to be useful for mass production. For example, there are steppers that can process one-hundred 8-inch wafers per hour.
One way to increase the usefulness of a chip is to increase its size. In the "step and repeat" example described above, the size of the chip is limited to the exposure size of the stepper. The exposure size is small (roughly 20 mm�40 mm) because of the cost of an optical system that is capable of projecting a high quality image of the mask onto the wafer. It is very expensive to increase the size of a chip by increasing the exposure size of the stepper (for example, this would require larger lenses—which by themselves can cost millions of dollars). Another approach is to modify a stepper so that light only shines on a subsection of the mask at a given time. Then, the mask and wafer can be scanned (moved relative to the fixed light source) simultaneously until the entire mask is imaged onto the wafer. This modified stepper is known as a "scanner" or "scanner/stepper". The scanner serves to disconnect the exposure size from the chip size.
Scanners offer increased chip size at the expense of increased complexity and mask costs. Because scanner masks are larger, the masks are more fragile and are more likely to contain a defect. The increased size and fragility of the mask mean that the masks for a scanner will be more expensive than the masks for a stepper. Also, because the image is being demagnified, the mask and wafer must be scanned at different speeds. Because of the great precision required, differential scanning increases the cost and complexity of a scanner when compared with a stepper.
Many chip manufacturers are looking toward future improvements in resolution and/or exposure size to help continue the growth that has driven the semiconductor industry for the past thirty years. Improvements in these areas have been partly the result of improvements in the optical systems used to demagnify the mask and of the use of shorter wavelength light. In particular, modern lithography systems used for mass production are "diffraction limited", meaning that the smallest feature size that it is possible to print is determined by the diffraction of light and not by the size of features on the mask. In order to improve the resolution, one must use either a shorter wavelength of light or other techniques such as optical proximity correction or phase shifting. The wavelength used in leading edge lithography has shifted from 436 nm to 365 nm to 248 nm to 193 nm and is expected to move to 157 nm in the future. There is also considerable efforts to move to much shorter wavelengths such as EUV (13 nm) and x-rays (1 nm). Additionally there are research efforts to use other forms of radiation such as electron (SCALPEL and EPL) and ions (IPL) which have still shorter wavelengths.
While the technology herein has been described in connection with exemplary illustrative non-limiting implementations, the invention is not to be limited by the disclosure. The invention is intended to be defined by the claims and to cover all corresponding and equivalent arrangements whether or not specifically disclosed herein.
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if I hear breast milk is better for babies then formula, yes another one of those threads! IDC I am sick of it, I tried so hard to do it and still I try to pump several times a day but it does work for me. I am sick of people thinking that they are better then me or that their kid is going to be smarter then mine just because they could BF. If formula was so effing bad for babies don't you think they would have taken off the market by now? Argh sorry needed to get that out
I am going to have a freak out
Alison loving mom to Kaden 4/1/04, Kyler 8/11/06, and Kenadi 1/26/09
K+L+C+L = our family complete!
1/5 GOs July 2014
Sorry, being rude is not a vio, it is just someone being rude.
i am ebf right now cause it works for us. My oldest was ff after a few months because it wasn't working and I got so many comments! If he was sick...it was cause I didn't bf....it drove me crazy! Do what works for you and your lo and I assure you they will be just fine!
Proud mama to 4 beautiful kids....I'd have a clean house, more money and my sanity...but my heart would be empty.
5/13/04, 3/07/07, 9/17/08, 9/15/12
Proud eff, c section, full time working mommy of 2 beautiful boys!!
Married my air force love on December 1, 2011
Elizabeth Anne arrived September 17th at 5lbs 14oz and 18in
DS - Cyrus 1/29/2010
DD - Saffron 10/6/2012


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Texas A&M-Kingsville students identified
Pair drowned in pool on Sunday
Texas A&M University-Kingsville officials identified the two students pronounced dead Sunday after being pulled from an apartment complex swimming pool as Pravesh Kumar and Vijay Mahadevan.
Both students were 23 years old and natives of India. They were discovered in an apartment complex swimming pool around noon Sunday; Kingsville police have not determined causes of death and are awaiting autopsy results.
Kingsville Police Chief Ricardo Torres said Sunday that the incident appeared to be an accident.
Kumar, from Chennai, India, was business administration graduate student. Mahadevan, from Thane, India, was an electrical engineering graduate student.
A&M-Kingsville officials released a statement to students, staff and faculty Monday about the incident.
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Originally written on Fox Sports | Last updated 2/7/13
Alex Tanguay scored on a one-timer 1:07 into overtime to lead the Calgary Flames past the Columbus Blue Jackets 4-3 on Thursday night in a battle of Western Conference cellar-dwellers. Shortly after Columbus threatened on two shots by Fedor Tyutin, the Flames had an odd-man rush and Jarome Iginla saucered a cross-ice setup to Tanguay, who unloaded from the right dot. Roman Cervenka, Mikael Backlund and Lee Stempniak scored for the Flames, who won their second in a row. Jiri Hudler and T.J. Brodie each had two assists. Mark Letestu had a goal and two assists for the first three-point game of his 145-career, while Vinny Prospal had a goal and an assist and Matt Calvert also scored for the Blue Jackets. The teams came into the game with the fewest points in the Western Conference, Calgary (2-3-2) last with six and Columbus (3-6-1) 14th with seven. The Flames were without two of their top players. Goalie Miikka Kiprusoff is listed as day to day with a leg injury. Center Mike Cammal...
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One thing I didn't see posted was Hendersons punches to the theighs. I see GSP useing that blueprint too.
TDD GSP has taken down the best of the best so at some point Nick will be on his back even if thats all he trained since he retired. So working on sub's will lessen GSP's GNP due to being extra careful.
My prediction is GSP will leg kick, fake shots punch to the theigh, and take him down late in the round to secure a strong dec.
Shouldn't read too much into this. All CJ said is that Diaz is going to make sure he's really strong off his back by training a shitload with Shields, who has a very strong top game. It would be insane for him not to work on his guard for this fight.
I just hope he doesn't go in with a really shitty game plan. I think fighting off of his back CAN work, Condit busted up GSP pretty good off of his back, but it's not going to win rounds. The main problem with fighting off of your back is that any legit MMArtist has spent countless hours in another guys guard. All the triangle/armbar escapes are deeply ingrained in their muscle memory. Subbing a guy like GSP from the guard is almost impossible. Landing something when he's already hurt is another story though.


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From Our Editors
Independent Records & Video stocks a superb selection of new and used CDs and LPs, DVDs, and games. Invite the eccentric musical stylings of Erykah Badu's New Amerykah Part Two ($9.95) into your eardrums, pick up Jimi Hendrix's recently released posthumous studio album, Valleys Of Neptune ($6.97 used), or pan for gold in stacks of classic and contemporary blues, jazz, electronic, and pop music. To rest eyes weary from searching old copies of National Geographic for photos of giant pinecones, take a look at Independent's stock of movies, which are available on DVD and Blu-ray and span every genre and time period. Classic comedies such as Caddyshack ($9.99) line shelves alongside newer releases that dive deep into unexplored depths of Earth and man (Oceans costs $28.99, season seven of Curb Your Enthusiasm costs $32.99.) Though stock varies in each store, Independent is committed to customer satisfaction and will place a special order at no extra charge.


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Two Naval Academy midshipmen, one of them the son of an admiral and on the academy baseball team, were detained early Wednesday in what Annapolis police said were unrelated property damage incidents.
Michael Christopher Guadagnini, 22, a midshipman first class, was found laying by a tree in the woods near the 1400 block of Regent St. wearing an academy uniform and bleeding from the nose, police said. Maj. Scott Baker said that at about 1 a.m. the homeowner, reporting a burglary, said that he confronted a man who smelled of alcohol and who had kicked in his back door, entered and left. Police said the homeowner identified Guadagnini as the person he'd confronted. Charges were pending Wednesday.


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Horse Riding in Chianti Day Trip from Florence
Read what other Viator.com travelers think about the Horse Riding in Chianti Day Trip from Florence. What they loved, what they liked and what they think could be improved, it's all here to help you make the most of your next trip.
Click here for tour details, schedule and pricing
our guide was fantastic. Debbie her name was. informative and fun. our horses were great and well behaved. the dinner at the winery was excellent.and our guide was very knowledgeable, I forgot his name but he was funny and friendly. the whole day was well woth it. I would've like a bit more time for dinner so we could've had time to digest and enjoy a little more relaxation before we went back, but it was great none the less.
Loved every second of this tour, just do it!! This was the highlight of our trip to Florence, in fact it was the highlight of our trip to 9 different countries!!
this trip was cancelled due to the weather but it was arranged for another day and was pleased it was as it was a great day out.
Do it!! We had a great time. My daughter said It was a perfect day. So much fun, very professionally run, the horses were beautiful, the food during the lunch was fabulous, the farmhouse beautiful, the people were gracious and lovely and lastly our tour guide Eduardo was so funny and sweet. Just fantastic. We would do it again and have been telling everyone we know about it. The only thing I wish was that we had a wine tasting available if we wanted it at the Ruffino vineyard. But that is really stretching to find something not perfect about this tour or our day!
This tour was great! it was a nice combination of various things horse back riding, wine tasting and lunch. I chose to do this rather than a fully dedicated wine tour and am happy I did!!
The trail ride on horseback was very enjoyable. Helmets are provided and the whole ride is done at a walk but you are there for the scenery so this is fine.
Our guide Sephora was an excellent and funny person! : My horse Diabolo awesome, the view, the place and the visit to Ruffino was excellent! :
I don't know where to begin, there simply aren't enough characters to express how absolutely amazing this trip was, I would definitely recommend ! I got so much more than I was expecting. I want to say a special thanks to the instructors, they were extremely friendly.
This booking was a lot of fun. The driver, people at the stables and the winery were all very nice and outgoing.
The lunch was excellent!
Great experience. We loved it.
So much more than I expected! I have been to Florence many times and wanted to get out in the hills of Tuscany for a bit. We started with a charming drive to a lovely winery where we were given a tour (no tasting yet) and after a bit of a wait on the estate grounds, were transported to horseback riding. I had thought this would be the most interesting aspect of the tour, and it was really nice and diverse, but really, the last part was the best. After riding, we were again transported through the lovely winding roads to a rustic location which had more wine cellars. We then started the wine tasting. Since I booked the afternoon riding, I can't say what lunch is like, but I can tell you about the dinner. It was AWESOME! We were seated at long tables in this lovely sophisticated rustic cellar/wine tasting /trattoria sort of room. Boards of salami, prosciutto, cheese were on the tables. To the side was a long table set up buffet style where we could load our plates with lovely veggies, pasta and other items. I was so pleased, I can't tell you. The staff and our tour guide Steven were more than wonderful. I would have done this again the next day if I only had been able. Thanks for offering this tour and we all enjoyed it so much!
I chose this tour because it seemed different, it went way beyond expectations. Jean Luca and the other guides were fabulous, the wine tasting short but great, the horse ride was lovely thru the olive groves, the girls were darling and I was surprised at finishing with such a great dinner, grazie!!
Amazing day!!! Great for beginning horse riders.
We had a really great day. Tour was excellent as were the guides. The family whose farm we rode at were very friendly. This was one of our favourite days while in Italy!
The people at the stables were very helpful and kind. We did not feel rushed, they took their time in showing us around, the horse riding was amazing. Riding through the Tuscany counryside on a horse was by far one of the most memorable parts of our holiday.
Next time we are going to book a full day.
Excellent experience! Very special countryside in fiorentino Chianti! One hour of peaceful riding in vineyards! The tour guide was very helpful and smiling and always caring about our safety!
And the finale, very nice choice of wine- tasting in Chianti!
We definetely recommend it!
This was one of my favorite things I did in ALL of Italy! The tour was a small group and we literally rode horses through a winery and hills of Tuscany. It was ABSOLUTELY fabulous and breathtaking! The wine tour and meal after the riding was delicious too! Highly Recommend!
A most excellent time! The guide driving the van, Martina, was personable and very informative. Then the guide on the horseback riding tour (can;t recall her name but she was fabulous. SHe told us so much about the neighbors and grounds. SHe was very patient with us and the horses. She also snapped all the photos for us with our cameras because I was afraid of falling off, given the steep hills we climbed. It was a lot of fun, even though it was a hot day. Bring water!! ALso, they do not let you take backpacks or purses on the ride. I had to leave my purse with Martina - it had over 250 euros in it and it was all there when I returned. A fabulous lunch and wine tasting is provided, and then we got a special treat as Martina let us stop for gelato because our group was small. IT was a great time - well worth the money!!
By far one of the best trips ever to Florence!! Horses were amazingly beautiful and lazy ;) HA! Wine tour was fantastic and the wine and food we had was to die for! Ended up buying the wine we tasted right there! Highly recommend!!
Unfortunately due to major traffic in the city we came to late on the meeting and missed the tour on horses but thanks to the nice people in charge of the vespa tours that were around and that invited us to join the group instead of the horses , we enjoyed a fabulous day ! Tks to all the team
this tour was above and beyond what we expected I hadn't ridden since I was a teen but the horses were
calm and workable. The view was breathtaking and he food was delicious also the wine tour was very enlightening. My husband also enjoyed this tour. Totally recommend this if you are in Tuscany or Florence.
EXCELLENT tour. Loved the horseback riding and enjoyed the meal/wine-tasting and short tour of the winery. This was one of our favorite days in three weeks in Tuscany. Was with two 16 year olds - they LOVED it.
The most enjoyable trip I have had here. Riding slowly round the Tuscan hills on shady pathways was delightful. Really nice driver on way back a really good way to experience Tuscany. I loved it.
Thank you Beatrice and staff for a wonderful way to see Tuscany! Highly recommended.
My wife and I were the only two people on this guided tour through the wine country of Tuscany. What a beautiful, memorable and fun way to see this beautiful countryside. After riding for over an hour we were treated to a delicious lunch at a beautiful winery and villa where we were able to sample some of the wines produced there. While being driven back to Florence, we stopped at a small, local grocery store and met a lovely Italian lady who insisted we sample the local salami, sweet wine and biscotti. We then drove a short distance and stopped to enjoy yummy gelato. I couldn't imagine a better way to spend an afternoon in Tuscany.
Although the vines were not in leaf, the vineyard is surrounded by olive trees and the distant views were dotted with evergreens. The riding was easy, the horses are relaxed and the western saddles are a good idea as the tracks go downhill steeply to the winery. Lunch was interesting and we had two samples of the wine produced here. The winery tour was more detailed than we were expecting and we learnt a lot about Chianti as well as this family-run vineyard. We stopped for a gelato on the way back to the city at about 3pm. The day was excellent value and we did not hesitate to book the walking tour with florencetown.


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Typically, a collections specialist is an individual that specializes in the collection of debt owed to their organization. They use a variety of means to contact individuals who have defaulted on debts and/or who have not paid past-due bills. Collections specialists usually work in a call center with other collections specialists, although they may telecommute from a remote location such as a home office.Read More...
Usually a collections specialist has some experience working in a lending or banking role. Many collections specialists have at least a bachelor's degree in finance, economics, or a related field, although it is not an industry-wide requirement for a collections specialist to hold a college degree. Often, a collections specialist also has a background working in sales or another field that requires an individual to be comfortable directly engaging with others in high-pressure scenarios.
A collections specialist must have exceptional communication skills, as well as listening abilities. Good attention to detail is another important skill for a collections specialist to possess, as is a proficient understanding of consumer credit reports. A collections specialist usually works under the guidance of a departmental manager who assigns them a caseload of debtors whom they are to attempt to contact in an effort to procure payment. A collections specialist often must be resourceful and creative to locate and successfully contact an individual for whom they do not have current contact information.
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Collections Specialists who transition into Collections Managers are few and far between. The job pays an average $49K per year. With an annual salary of $45K, Collections Supervisor is the most common role for Collections Specialists to subsequently assume on their way up the ladder. Transitioning into a Bill & Account Collector role — which usually pays $31K — is also typical for Collections Specialists, though less common by comparison.
Collections Specialists report using a wide range of professional skills. Most notably, skills in Negotiation, Accounts Receivable, Customer Relations, and Collections are correlated to pay that is above average, with boosts between 5 percent and 12 percent. Skills that pay less than market rate include Medicaid & Medicare Billing. Most people who know Collections also know Accounts Receivable.
Median of all compensation (including tips, bonus, and overtime) by years of experience.
For Collections Specialists, experience does not seem to be a major factor in determining pay. Salaries for the relatively untried average out to around $32K, but survey participants with five to 10 years of experience earn a significantly higher median of $36K. Collections Specialists who work for 10 to 20 years in their occupation tend to earn about $39K. Collections Specialists who surpass 20 years on the job report pay that isn't as high as one would expect; the median compensation for this crowd sits around $41K.
For Collections Specialists, working in the bustling city of San Francisco has its advantages, including an above-average pay rate. Collections Specialists can also look forward to large paychecks in cities like New York (+17 percent), Chicago (+14 percent), Dallas (+11 percent), and San Diego (+8 percent). In San Antonio, salaries are 18 percent below the national average and represent the lowest-paying market. Workers in Nashville and Indianapolis earn salaries that trail the national average for those in this profession (16 percent less and 11 percent less, respectively).
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|None: 18%