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A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostructure diode laser. The mirror surfaces are preferably formed using a mass-transport heating process. Other mirror shapes may be formed in accordance with the invention.
1. The method of forming a collimating element on a semiconductor surface comprising the steps of:
(a) forming layers of semiconductor material on a substrate;
(b) selectively etching the semiconductor layers to form a surface profile approximating the desired profile of the collimating element;
(c) smoothing the surface to the shape of the desired profile by a heat treatment without etching.
2. The method of claim 1 wherein the surface is smoothed by relocating material by heating the material at a sufficient temperature for a sufficient duration to cause the material outside the desired profile to migrate and fill the voids in the approximated profile.
3. The method of claim 2 wherein the etch stop layer material is a quaternary III-V alloy and the material of the other layer is a binary compound.
4. The method of claim 3 wherein the quaternary III-V alloy is GaInAsP and the binary compound is InP.
5. The method of claim 1 wherein the collimating element is a spherical lens.
6. The method of claim 5 wherein the spherical lens is a paraboloid.
7. The method of claim 1 wherein the surface is smoothed by depositing a layer of material over the approximated surface.
8. The method of claim 1 wherein the collimating elements are formed adjacent a light emitting edge of an active layer of a laser diode formed in said semiconductor.
9. The method of claim 1 wherein the semiconductor layers form planar p-n junctions therebetween and light is collimated in a plane normal to the p-n junction.
10. The method of claim 1 wherein the collimating element comprises a vertical partly light transmissive surface adjacent a parabolic reflective surface.
11. The method of forming an array of surface emitting laser semiconductor devices comprising the steps of:
(a) making a plurality of adjacent mesa structures on a substrate by:
(i) forming a substrate;
(ii) forming a first layer of semiconductor material over said substrate;
(iii) forming a second layer of semiconductor material on the first layer;
(iv) forming a first coating over a portion of said second layer;
(b) removing a plurality of portions of said second layer on two adjacent sides of said protective coating down to the top surface of said first layer;
(c) removing a plurality of portions of said first layer underlying adjacent sides of said second layer so as to produce undercut areas beneath the remaining second layer with volumes of first layers therebetween, said volumes of first layer having top, bottom and four side walls, with two adjacent side walls thereby being exposed to the atmosphere; and
(d) heating the structure in a controlled environment to a temperature which causes the material in the regions of the undercut areas to travel into the undercut area and enclose the exposed side walls;
(e) forming a second coating over said second layer with striped openings aligned with the portions of the first layer; and
(f) removing portions of said second layer and first layer to expose first and second opposing walls;
(g) forming in said mesa structure a partly light transmissive surface on the first opposing side wall and a light reflective parabolic surface adjacent said partly light transmissive surface on the second opposing wall.
12. The method of claim 11 wherein the light transmissive and light reflective surfaces are formed by heating the structure and coating the parabolic surface with a reflective coating.
13. The method of claim 11 wherein the substrate and second layer is InP and the first layer is GaInAsP.
14. The method of claim 11 wherein the light transmissive surface is formed in step (g) by:
(a) removing a portion of the substrate vertically below the striped openings until a nearly vertical profile groove is obtained below the striped openings;
(b) selectively removing the exposed first layer and forming a small undercut region in the first layer below the second layer; and
(c) heating the structure to a temperature which will cause the material in the area of the vertical profile to migrate and fill in the undercut and form a smooth flat vertical mirror surface adjacent the side wall of the first layer and coating the surface with an oxide.
15. The method of claim 14 wherein the parabolic surface is formed by removing a portion of the first and second layers on a side of the groove down to the substrate in the groove adjacent the side upon which the vertical mirror surface is to be formed to form a step-like profile in which the upper second layer is laterally recessed a distance "s" and wherein t2 is the thickness of the first layer and t1 is the thickness of the second layer with respect to the lower first layer then forming said step-like profile into a parabolic profile by subjecting the side to the heat treatment of step (b) of claim 23 and coating the profiled surface with a light reflective material.
16. The method of claim 11 wherein the substrate includes a buffer layer with an etch stop layer beneath the buffer layer.
17. The method of forming smooth vertical surfaces on a semiconductor device comprising the steps of:
(a) making a body by:
(i) forming a substrate;
(ii) forming an active layer of semiconductor material on the substrate;
(iii) forming a top layer on the active layer; and
(iv) forming a coating over a portion of the top surface with openings provided where the smooth surfaces are to be located;
(b) removing a portion of said top layer through said openings down to the top surface of the active layer;
(c) removing the exposed portion of said active layer;
(d) removing a portion of the substrate below said opening to form a nearly vertical cross-sectional profile below the openings;
(e) removing the newly exposed active layer and producing a small undercut area beneath the remaining top layer; and
(f) heating the body to cause the material in the top layer and substrate in the region of the undercut to fill in the undercut area and embed the exposed edge of the active layer and form a smooth mirror surface adjacent thereto.
18. The method of forming a smooth vertical surface on a heterostructure semiconductor laser device comprising the steps of:
(a) making a heterostructure by:
(i) forming a substrate;
(ii) forming an active layer of quaternary III-V alloy semiconductor material on the substrate;
(iii) forming a top layer of a binary compound semiconductor material on the active layer; and
(iv) forming a coating over a portion of the top surface of the top layer with strip openings over the area where the smooth vertical surface is to be formed;
(b) removing a portion of said top layer down to the top surface of the active layer by etching said binary compound but not said III-V alloy;
(c) removing the exposed portion of said active layer by etching said quaternary III-V alloy but not said binary compound;
(d) further removing portions of said substrate below the strip openings;
(e) removing the newly exposed portion of the active layer; and
(f) heating the heterostructure to cause the material in the region of the undercut area to migrate into the undercut area adjacent the active layer and form a smooth vertical surface adjacent said active layer.
19. The method of forming a surface light emitting quarternary III-V layer in a heterojunction device having alternate layers of quaternary III-V material and binary III-V material comprising the steps of:
(a) selectively etching only the binary material until a mesa of binary material is formed over the layer of quaternary material and a surface of quaternary material is exposed on two sides of said mesa;
(b) selectively etching only the quaternary material at the exposed surfaces until two undercut regions are formed under the mesa with a layer of quaternary material therebetween which is exposed on two sides; and
(c) filling in the undercut region with binary material from said means sufficient to bury the exposed portion of said quaternary material;
(d) selectively etching only the binary material on the means at an area where a smooth vertical surface is to be located to expose the two previously unexposed sides of the quaternary material;
(e) selectively etching only the quaternary material thus exposed;
(f) selectively etching the binary material in the space below and between the adjacent undercut regions; and
(g) filling in the two adjacent undercut regions with binary material to bring the exposed portions of the quaternary material and form a smooth vertical surface adjacent one of the filled-in undercut regions and a parabolic surface adjacent the other.
20. The method of claim 15 wherein "t1 " is approximately equal to (2+8/3ε-8/9ε2)σ, "t2 " is approximately equal to (2-4/3ε-32/9ε2 -64/9ε3)σ, "s" is approximately equal to (2+2/3ε+4/9ε)σ and wherein: ε is σ/2a;
a is 2L;
L is the focal length of the parabolic profiled surface; and
σ is the horizontal distance between the parabolic profiled surface and the adjacent smooth vertical surface.
21. The method of claim 18 wherein the active layer is formed of GaInAsP and the top layer is formed of InP.
22. The method of claim 19 wherein the quaternary material is GaInAsP and the binary material is InP.
23. A method of forming an array of surface emitting laser semiconductor devices comprising the steps of:
(a) forming a plurality of edge emitting active laser devices on a monolithic substrate, said edge emitting active laser devices comprising p-n junctions formed of III-V material wherein laser light is emitted from said devices in a direction parallel to the plane of the p-n junction; and
(b) forming a smooth partly light transmissive surface extending vertically normal to said plane and adjacent said junction; and
(c) forming a parabolic light reflective surface opposite said normal surface to direct laser light emitted from said laser in a direction normal to said plane of the p-n junction.
24. The method of claim 1 wherein at least one of said layers comprises an etch step layer.
25. The method of claim 24 wherein the semiconductor material comprises InP and the etch step layer is comprised of GaInAsP.
The Government has rights in this invention pursuant to Contract No. F19628-85-C-0002, awarded by the Department of the Air Force.
This application is a division of applicaiton Ser. No. 693,207, filed 1/22/85, U.S. Pat. NO. 4,718,070.
This invention is in the field of semiconductor lasers and more particularly relates to GaInAsP/InP double-heterostructure (DH) lasers capable of pulsed and cw operation at room temperature.
Semiconductor lasers capable of producing continuous stimulated radiation at wavelengths in the vicinity of 1.1-1.7 μm (micrometers) at room temperature are of interest for communications systems using fiber optics, since it is in this wavelength range that both the transmission losses and the dispersion in high-quality glass fibers are low.
Semiconductor lasers of quaternary III-V alloys of GaInAsP grown on a binary compound of InP (double-heterostructures or DH) have proven practical for operation at this frequency range. Furthermore, a particular type of laser construction, i.e., the buried layer type or BH laser for "buried heterostructure" laser; wherein the active layer (GaInAsP) is both vertically and laterally confined (Proceedings of the IEEE, Vol. 64, No. 10, October 76, pp 1528-1529) has been of particular importance for reducing threshold current Ith, and for increasing mode stability in semiconductor lasers.
As a result of this interest, various techniques for fabricating BH laser diodes have evolved.
Recently, a novel technique for fabricating BH lasers was described in U.S. Pat. No. 4,468,850 to Liau et al. issued Sept. 4, 1984, which utilizes a "mass transport phenomenon" to bury the active layer. In this device, an active layer of quaternary III-V alloy is grown on a binary III-V compound substrate using conventional liquid phase epitaxial (LPE) techniques. A top layer of a binary III-V compound is similarly epitaxially grown on the active layer.
Next, an oxide stripe mask is formed by conventional photolithography techniques on the top layer.
An undercut mesa structure is then formed by a two-step selective chemical etch. A first etchant is used to remove the top layer where it is not protected by the oxide coating. This top layer is removed down to the active quaternary layer at which point the first etchant step is immediately terminated and a new etchant is used to remove the active layer underneath the remaining top layer, except for a thin volume of active material underlying the remaining top mesa structure.
Next, the structure formed as above, is subjected to a controlled temperature cycle which produces a transport of material so as to fill in the void left at the undercut region and thereby enclose the sides of the remaining volume of the active material.
Lastly, ohmic contacts are provided across the device to enable current to be passed through the structure to produce lasing.
This process produces an improved double heterostructure laser diode of the BH type wherein the active layer is uniformly and narrowly defined, conventional epitaxial regrowth on a non-planar surface is eliminated, the yield is high and the threshold current is low.
Another application of the "mass transport phenomenon" is described in U.S. Pat. No. 4,468,850. In this application, the "mass transport phenomenon" is used to improve fabrication of etched mirror surfaces of laser diodes. This process is shown in FIG. 1 herein, labelled Prior Art. FIG. 1 is a progression of sectional side views of a buried heterostructure laser diode in which a mirror surface is formed on the surface of the diode shown by the arrow M in FIG. 1a. The starting structure consists of a n-doped indium phosphide buffer layer 14 formed over a n-doped indium phosphide substrate 16. A very thin gallium indium arsenide phosphide active layer 18 is formed over layer 14 and a p-doped indium phosphide top layer 12 is formed over the active layer 18.
Next, an oxide coating 20 is applied to the top layer 12 to form a mask by conventional photolithography techniques which ends at surface 42.
After the sample is fabricated, as described above, it is placed in an etchant bath of HCL for a sufficient length of time, such that the indium phosphide material 12, that is not under the oxide 20, is etched away. The etchant process is continued for a little while longer until the indium phosphide is etched a small distance (A), providing an overhang 43 underneath the oxide 20 (See FIG. 1b).
In the next step of the process, (step 3 shown on FIG. 1c), the oxide 20 is removed by conventional techniques and the gallium indium arsenide phosphide quaternary active layer 18 is etched away using an aqueous solution of KOH and K3 Fe(CN)6 (potassium ferricyanide). This etching process is allowed to continue uttil an undercut region is produced for a distance (B), (as shown in FIG. 1c). Next, the sample is subjected to a heat treatment, in which it is heated to a temperature of about 670� C., in an LPE chamber with flowing phosphine gas.
This temperature treatment results in transport of the indium phosphide in layers 12 and 14 to fill in the undercut 44 of FIG. 1c, resulting in the structure shown in FIG. 1d.
Next, as shown in FIG. 1e an oxide 20' is formed on the top layer 12 and layers 12 and 14 are etched in a solution of HCL for a sufficient time to produce an optically flat mirror surface 40, with a small separation B' between the end of the laser active region 18 and the mirror surface 40.
The semiconductor diode lasers described in U.S. Pat. No. 4,468,850, as well as all other known diode lasers now in use, are very small discrete, edge-emitting devices, with the laser mirrors formed by cleaving, i.e., by breaking the substrate along certain crystallographic directions or, in the case of U.S. Pat. No. 4,468,850, by etching along a crystallographic plane. A need exists for a surface-emitting diode laser, i.e., one which emits laser radiation in a direction normal to or perpendicular to the substrate surface. Such a device lends itself to a major advantage of batch processing in a large-area chip containing a great number of laser diodes forming a two dimensional array along with other monolithic circuitry, since substrate-cleaving is no longer necessary.
Attempts to form a surface-emitting diode laser have not been particularly successful. For example, Iga et al. "Lasing Characteristics of Improved GaInAsP/InP Surface Emitting Injection Lasers", Electronic Letters, June 23, 1983, Vol. 19, No. 13, have fabricated short cavity lasers in which light is propagated perpendicular to the plane of the p-n junction and the semiconductor layers. This type of structure suffers from the serious disadvantage that it is difficult to get sufficient cavity path length in such a structure. Also, to realize adequate gain to sustain laser emission, nearly 100% reflective mirrors are required.
Itaya, et al., "New 1.5 um Wavelength GaInAsP/InP Distributed Feedback Laser", Electronic Letters, Nov. 11 1982, Vol. 18, No. 23 describe a distributed feedback DFB laser of GaInAsP/InP with an etched tilted facet wherein the DFB corrugations are designed to reinforce light waves propagated perpendicular to the active layer and obtain a laser beam coupled out normal to the plane of the p-n junction. This device suffers from the problem that gratings are difficult to make and that the coupling efficiency is low.
Surface-emitting lasers may find particularly useful application as monolithic two-dimensional arrays, as optical interconnects for integrated circuitry and as sources for optical pumping of solid state lasers.
Additionally, the process of forming etched mirror surfaces, as described in U.S. Pat. No. 4,468,850 would be significantly improved if the mirror surface could be formed without the use of an etchant to finally form the mirror surface. It is generally difficult, if not impossible, to obtain the flat perpendicular surfaces required for diode laser mirrors using etchants because the etchant process is extremely sensitive to crystallographic orientation and crystallographic defects.
Consequently, a need also exists for a method of forming mirror surfaces on diode lasers wherein the formation of the final mirror surface, per se, is achieved without the use of etchants.
The present invention relates to a novel process and apparatus for making diode lasers, preferably of the BH type in which an array of such lasers are formed on a single substrate and laser emission is perpendicular to the substrate surface. Furthermore, the mirror surfaces, which enable perpendicular emission, are formed by a process which eliminates use of etchants in the final step of mirror surface formation, per se.
In a preferred embodiment, the foregoing is accomplished by adding parabolic reflective mirrors to a two dimensional array comprising a plurality of BH lasers formed on a substrate.
Buried active layers are first formed on the substrate in a plane parallel to the substrate surface. A planar p-n junction is formed between the buffer layer and an oppositely doped top layer. The diode thus formed emits photons out an edge of the active layer. A light transmissive mirror surface which is partially reflective (hereinafter sometimes called a "partly light transmissive surface" or simply "transmissive surface") is formed adjacent the light emitting edge of the buried active layer and perpendicular to the plane of the active layer and the p-n junction. A light reflective parabolic mirror surface is formed opposite to and adjacent the transmissive surface. The parabolic mirror collimates light emitted from the edge of the active layer which passes through the transmissive surface and reflects the light in a plane perpendicular to the p-n junction.
This enables emitted light to be reflected off the parabolic mirror surfaces perpendicular to the planar array of BH lasers. Preferably, the vertical mirror surfaces and the parabolic mirror surfaces are each fabricated by selective chemical etching to form profiles which approximate the final shape followed by a heat treatment which induces mass transport of material to produce a smooth mirror surface of the finally desired shape.
More specifically, for the parabolic shape, a step structure approximately a parabola is first formed by etching. The desired parabolic surface is obtained if the height of the top step, t1, and lower step, t2, and the width of the step, S, is made to solve the equal volume requirement. By equal volume requirement we mean that the volume to be relocated should be made equal to the volume to be filled. Other embodiments will be shown directed to a lens forming process, a crystallographic 45� mirror with air gap, and forming a bowl of cylindrical, parabolical or spherical shape.
FIGS. 1a-1e show cross-sectional views of the use of the double etched mass transport phenomenon technique to fabricate laser diode mirror surfaces in accordance with the prior art U.S. Pat. 4,468,850.
FIGS. 2a-2d show cross-sectional views similar to FIGS. 1a-1e of the process of the present invention to form laser diode mirror surfaces.
FIG. 3 is a partly sectioned perspective view of a portion of an array of surface emitting BH laser diodes in accordance with the invention.
FIG. 3a is an enlarged cross-sectional view of the device of FIG. 3.
FIGS. 4a-4c show cross-sectional views illustrating the process of forming adjacent vertical and parabolic mirror surfaces on an array of BH laser diodes.
FIG. 5 is a perspective view of a series of steps of further embodiment of the invention in which the mass transport phenomenon is used to fabricate a lens on a semiconductor structure.
FIG. 6 is a cross-sectional view of the FIG. 5 structure showing the details of the various steps in the process shown in perspective in FIG. 5.
FIG. 7a is a perspective followed by cross-sectional views 7b -7d of the process of forming crystallographic 45� mirrors on a buried layer heterostructure to reflect light in a plane perpendicular or normal to the p-n junction and out the bottom substrate surface underlying a laser mesa diode.
FIG. 8 is a perspective view of a cylindrical lens surface of spherical or paraboloidal curvature formed adjacent the edge of a buried active layer laser diode for the purpose of collimating and focusing light emitted from the layer edge.
I. Transported Mirror
FIG. 2 shows the method of making a first embodiment of the invention in which a smooth mirror facet is formed at the end of a BH laser mesa by a mass-transport procedure. Except for a surface treatment for improved adhesion of the oxide mask, the initial steps in the procedure are, as described in the prior art patent process shown in FIG. 1. Note that like reference numerals have been used in FIGS. 1 and 2 to facilitate comparison.
The starting structure 10 consists of a n-doped indium phosphide buffer layer 14 formed over a n-doped indium phosphide substrate 16. A gallium indium arsenide phosphide very thin active layer 18 is formed over layer 14 and a p-doped indium phosphide top layer 12 is formed over the active layer 18. All of these layers may be formed by conventional epitaxial growth techniques, such as Liquid Phase Epitaxy (LPE).
An oxide mask coating 20 is applied to the top layer 12. Coating 20 ends at surface 42 and is formed by conventional photolithography techniques. The active region 18 may be buried, in accordance with the techniques described in U.S. Pat. No. 4,468,850, or other, more conventional techniques or may alternatively be appropriately confined instead of buried.
The wafer structure 10 is first treated in an aqueous solution of K3 Fe(CN)6 and KOH. Next, a SiO2 (or phosphosilicate glass, PSG) layer is pyrolytically deposited on the top surface of layer 12. Photolithographic techniques are then used to open up the layer 20 in the region where the mirror is to be formed. The longitudinal cross-section of the laser mesa at this stage is illustrated in FIG. 2a.
The wafer is then cleaned and steps of selective chemical etching are taken in order to obtain the profile shown in FIG. 2c. First, a mixture of H3 PO4 and HCl is used to remove the unprotected InP cap layer 12, as shown in FIG. 2b. Next, an aqueous solution of K3 Fe(CN)6 and KOH is used to remove the exposed GaInAsP active layer 18. These two etching steps are then repeated and the now exposed InP buffer layer 14 is also removed and the desired profile in FIG. 2c is obtained. The wafer is then loaded into a furnace system at a temperature of 670�-690� C. for effectively 30 minutes to form a smooth mirror facet 40, as shown in FIG. 2. The heat treatment results in transport of the InP in layers 12 and 14 to fill in the undercut 44 and results in a remarkably smooth mirror facet 40.
We have found that the pre-oxide-deposition surface treatment is important in preventing large and irregular undercuts when etching. Depending upon the amount of material to be relocated, we have also found that higher transport temperatures, in the order of 690� to 740� C., are more effective in smoothing the mirror facet.
II. Surface Emitting BH Lasers
We will now describe how the new technique for fabricating transported mirrors in BH lasers may be used with some modifications to provide two adjacent mirror facets opposite the light-emitting edge of the active layer of BH diode lasers to reflect light emerging from the light emitting edge of the active layer in a direction perpendicular or normal to the plane of the planar p-n junction formed between the buried layer and the adjacent layer of opposite conductivity. One of the mirror facets is a flat vertical light transmissive adjacent the light-emitting edge and formed in a plane normal to the plane of the buried layer while the other mirror surface is a parabolic reflective mirror surface which collimates and reflects light emerging from the edge to direct the light in a plane perpendicular to the plane of the buried layer and planar p-n junction and out the top surface of the device. The parabolic mirror is formed by smoothing a chemically etched, multi-step structure, using the aforementioned mass-transport phenomenon.
Referring now to FIGS. 3 and 3a (wherein like reference numerals have been retained for elements corresponding to elements in FIG. 2) there is shown a partial cutaway perspective of a portion of a two-dimensional array 10 of BH diode lasers formed on a substrate 16. For simplicity, only 3 laser diode mesa structures 62 underlying contact strips 24 are shown in FIG. 3. It should be understood, however, that one wafer may contain a multitude of such lasers 10. Furthermore, it may be desirable to provide support mesas, as in FIG. 7 of U.S. Pat. No. 4,468,850, between the laser mesas 62 for the reasons recited therein. Prior to fabricating the mirror facets 40 and 32, the structure 10 is preferably formed as described in U.S. Pat. No. 4,468,850. However, it should be understood that other well-known techniques for forming stripe geometry laser diodes may be substituted therefore.
Briefly, the starting structures may be formed as described below. The substrate 16 is doped with a concentration of 1�1018 cm-3 n-dopant such as tin. Next, a layer 14 of indium phosphide is formed by LPE over the substrate 16. This layer serves as a buffer layer and is preferably n-doped with tin to a concentration of about 2�1018 cm-3. The thickness of layer 14 is about 2.5 microns. The buffer layer 14 of indium phosphide is formed on the substrate 16 prior to LPE growth of active layer 18 to eliminate surface defects in the substrate surface of the type caused by thermal etching, etc. Thus, layer 14 and substrate 16 may be considered generally to constitute a substrate for the diode structure formed thereon.
An active layer 18 of GaInAsP is formed over the buffer layer 14, again by conventional LPE techniques. The active layer is a very thin film of about 0.2 um and is n-doped to a concentration of about 1�1017 cm-3.
Next, a top layer 12 of indium phosphide is provided over layer 18 with a p-type dopant to a concentration of about 5�1017 cm-3 to form a planar p-n junction at the interface between the layers. Top layer 12 is about 3 um thick. Using photolithographic techniques, oxide stripes (not shown) are provided over the top layer 12. The stripes of oxide are 5-6 um wide on 250 um centers with the stripes parallel to the (011) crystallographic planes. Preferably the substrate 16 is oriented in the (100) crystallographic plane.
Next, mesa structures 62 are formed by etching. Concentrated HCL or Bromine-methanol etchant is used to remove the portions of the InP top layer 12 not underlying the oxide stripes down to the active layer 18. The oxide is then removed and both sides of the exposed active layer are removed and undercut to a depth of about 4 microns. The sample structure is then heat-treated at a temperature of about 650�-700� C. in the presence of phosphine to cause migration of the material adjacent the undercut thereby burying the active region 18 on both sides of the mesa 62.
Next, in accordance with the present invention, partly light transmissive vertical mirror facets 40 and 32 are formed adjacent the light-emitting edge 30 of the buried active layer 18 and a reflective parabolic mirror surface 32 is formed opposite the light transmissive mirror 30, as will nbw be described in connection with FIGS. 4a-c. FIGS. 4a-c are schematicized cross-sectional views of the wafer structure 10 during various steps in the process taken at the area wherein the mirror surfaces 40 and 32 are to be located.
First an oxide mask of SiO2 or PSG 46 is formed on the top surface of layer 12 with openings formed to expose portions of the p-InP layer 12 in the area where the mirrors are to be located. A groove G is formed down to the top of layer 14 by the two-step selective chemical etch procedure described above in Section I.
Next, the mask 46 is partially removed on the side in which the parabolic mirror surface 32 will be formed using photolithography and buffer-HF etching. The selective chemical etch procedure is then repeated to produce the two-step or stair structure shown in FIG. 4b on one side of the groove G and a nearly vertical profile on the opposite side adjacent light-emitting edge 30.
Note that for better control of the etched profile, an optional GaInAsP etch-stop layer 48 may be incorporated in the BH laser during initial fabrication, as indicated in FIGS. 4a-c. Note, also, that active layer 18 acts as an etch stopping layer in the first part of the process. After etching, the wafer 10 is stripped of the mask layer 46 and loaded into a furnace system for mass transport at a temperature of 690�-740� C. in an H2 and PH3 atmosphere, to form a nearly parabolic mirror surface 32 out of the stair structure and a smooth vertical surface 40 out of the nearly vertical profile (FIG. 4c).
A mirror profile which exactly follows the curve of a parabola (the dotted curve in FIG. 4c) with a focal length L and a focus F near the buried-heterostructure laser output edge 30 will reduce laser-beam divergence. In order to achieve this highly desirable profile, the stair structure should be fashioned such that regions I, II, III and IV between he parabolic curve and the stair structure have approximately equal areas, as illustrated in FIG. 4c. By integrating the equation for a parabola, expressed as y=x2 /2a, it can be verified that the equal-area requirement is fulfilled to within 3 percent (for ε<0.13) by making the height t1 of the top step in FIG. 4b equal to:
t1 =(2+8/3ε-8/9ε2)σ
and the height of the bottom step:
t2 =(2-4/3ε-32/9ε2 -64/9ε3)σ
and the width of the step s:
where "a" is twice the focal length L of the parabolic surface 32 and σ is the horizontal distance between the parabolic mirror surface and the vertical top step and ε=σ/2a. Note that this simplified analysis has ignored the rounded edges generally observed on actual mirrors (see FIG. 4c).
We have found that mass-transport temperatures of about 690� to 740� C. are necessary to smooth out larger stair structures. Nevertheless, the wafer surface remains mirror-smooth without a sign of degradation after mass transport at temperatures as high as 740� C.
We have found that to maintain the parabolic mirror surface 32 to within �5� of the desired 45� angle, the deviation of "s" from the optimum value must be less than about �0.5 um. This estimation was made for a specific mirror size by using the above-mentioned equal-area requirement.
Referring back to FIGS. 3 and 3a, to complete the process, the sample is coated with an oxide by conventional techniques and striped openings made through the oxide layer 20 by photolithography techniques. A shallow zinc diffusion 36 is made through the openings in the oxide. After the zinc diffusion, Au-Zn alloy contacts 24 are made to the p+ indium phosphide zinc diffused layer 36 on the indium phosphide mesa top layer 12. The sample is then lapped from the substrate side to a thickness of 100 um and a AuSn alloy contact 28 applied to the bottom surface of the structure 10, followed by Ti/Pt/Au layers 68.
The wafer is metallized with Au over Ti layers 54 to facilitate contacting and provide a reflective coating over the parabolic mirror surface. An angle evaporation method of coating is preferred over sputtering for metallization to avoid coating the partially light transmissive vertical mirror surface 40 facing the reflective parabolic mirror surface 32. Note that the laser diode, per se, as shown in FIG. 3, consists of two vertical mirrors comprising a front partly transmissive mirror surface 40 and a back reflective mirror surface 50 and no cleaved mirror is used.
Surface-emitting lasers constructed in accordance with the invention, with low threshold current and high efficiency have been obtained with good yield. For example, 70% of the 26 devices tested without preselection from a single wafer show pulsed threshold currents of 12-18 mA. The active region dimensions measured on this wafer are 0.20 um thickness, 1.1-2.0 um width and 157 um length (the distance between the vertical mirror surfaces 40 and 50). Four devices were mounted p-side up on copper heatsinks and all show room-temperature cw operation (with no increase in threshold current) and very similar surface-emitting far-field patterns.
Far-field patterns, as narrow as 12�, were obtained which are considerably narrower than corresponding patterns of the conventional edge-emitting lasers (typically ≧30�) and are close to the diffraction-limited angular width estimated from the parabolic mirror size. The parabolic mirrors were made from a stair structure with a t1 of 2.7 um, t2 of 2.2 um and s of 2.5 um. The far-field patterns typically show about 5� deviations from the exact vertical direction and could be improved by a more precise control of the stair structure. Some side lobes are observed, especially at large angles. These are possibly due to light scattered off the rounded edges of the parabolic mirror and light that escapes the parabolic mirror due to the large beam divergence of the buried-heterostructure laser diode output. A larger parabolic mirror would probably solve this problem and also achieve a still narrower diffraction-limited beam.
An essentially single-longitudinal-mode operation within an approximately 10-mA current range has been observed. At 30 mA the device produces at a wavelength of 1.3393 um a dominant mode with intensity greater than 125 times the side modes which are 15-Å spaced. This degree of mode purity was not observed in the buried-heterostructure lasers of the 4,468,850 patent and can possibly be attributed to the fact that the present devices have a relatively short cavity, a heavier p-doping, one mirror 32 reflectively coated with Ti/Au and the other (moderately) anti-reflectively coated with PSG or SiO2.
It should be noted that the surface-emitting lasers of the preferred embodiments thus described of the invention have all mirror surfaces fabricated by the mass-transport process and show encouragingly low threshold current and high efficiency comparable to the best of the conventional cleaved-mirror edge-emitting lasers. Moreover, these device characteristics are obtained even though the wafers have been subjected to considerably higher temperatures than used before for mass transport.
III. Lens Formation
Yet another embodiment of the invention will now be described in connection with FIGS. 5 and 6. In this embodiment, a plurality of lenses 80 may be formed on a semiconductor substrate 70. While only one such lens is shown, it is to be understood that many such lenses could be formed on a single substrate and the substrate could be bonded, for example to the top of the array 10 previously described, to collimate light emitted from the surface of the array. Alternatively, the lens could be formed in the process to be described in connection with FIG. 7 to locate the lens at the bottom of the substrate 98, shown on FIG. 7, and further collimate light emitted from the bottom of the substrate 98.
Substrate 70 may comprise semiconductor material of crystallinity compatible with the device to which it is to be attached or in which it is to be formed. In this specific example, indium phosphide would be a suitable material for the substrate. The first step in the process is to form a circular oxide mask 74, as shown in FIGS. 5a and FIG. 6a. This mask is formed by well-known photolithographic techniques on the top surface 72 of the substrate 70.
Next, the material which is not underlying the mask 74 is etched away to expose a new surface 73 leaving an etched mesa 76 of cylindrical configuration protruding therefrom. (See FIGS. 5b and 6b.) Another circular oxide mask 77 is formed over the mesa 76 and the new surface 73, as shown in FIG. 6c.
Next, the material not underlying the mask 77 is etched away exposing another new surface 75 leaving a protruding stepped etched cylindrical mesa with a top mesa 76 and a bottom mesa 78, each of cylindrical shape, as shown in FIG. 5c and FIG. 6d.
Next, the substrate is subjected to a heat treatment, as previously described, to relocate the material of the cylindrical mesas to form a lens surface 80. Suitable etchants, as indicated in the previous descriptions, may be utilized to make the stepped cylindrical structures 76 and 78 and the principle explained earlier of the equal volume requirement should be satisfied in designing the dimensions of the steps on the mesa to obtain the desired lens surface shape. Grown quarternary layers can be used as etch-steps for precise control of the step sizes.
IV. Substrate Surface Emitting Laser Array
Referring now to FIG. 7, a further embodiment of the invention will be explained in connection therewith. In this embodiment of the invention, a pair of crystallographic 45� light reflective mirrors are fabricated adjacent the light emitting edge of a buried active layer diode laser. Laser radiation is directed at a 90� angle to the plane of the active layer and out the substrate surface to provide a directed surface emitting laser diode structure. Two partly light transmissive mirrors are provided by forming air gaps between the 45� mirrors and the substrate to provide optical feedback.
The starting structure for fabrication of such a device is shown in perspective in FIG. 7a to comprise a substrate layer 98 which may be formed of n-doped indium phosphide. Over this substrate, a layer 102 of gallium indium arsenide phosphide is formed to provide an etch stop layer which will be subsequently used to expose an air gap 106 (FIG. 7d).
Next, a further n-doped indium phosphide buffer layer 96 is formed over layer 102 and an active layer 100 of gallium indium arsenide phosphide formed over the indium phosphide layer 96. A top layer of p-doped indium phosphide 94 is then formed over layer 100, providing a planar p-n junction at the interface between the layers. Preferably, the substrate layers have their crystallographic planes oriented, as shown in FIG. 7.
An oxide mask 92 is formed on the top surface 94. By selective chemical etching using the etchants previously described, surfaces 104 underlying the oxide mask are formed at a 45� angle to the plane of the p-n junction device 90. The 45� angle is obtained by virtue of the fact that the crystallographic plane of the top layer 94 is oriented as shown with the 001 plane being at the long face of the active layer and the 010 plane being oriented normal thereto.
Next, a different etchant is used to undercut layer 100 below layer 94. In this manner, the structure shown in FIG. 7b is formed. Next the wafer is subjected to a heat treatment at the temperature and for a time period previously given to transport some of the material from layers 94 and 96 into the undercut region to bury the active layer 100 and form the structure shown in FIG. 7c.
Next, as shown in FIG. 7d, an oxide mask 92' again is formed again over the structure shown in FIG. 7c and the selective etching process is resumed to form mirror surfaces 104' at a 45� angle with respect to the plane of the p-n junction formed between layer 96 and top layer 94. These mirror surfaces 104' extend down to the top of etch stop layer 102. A second etchant is then used to remove a portion of layer 102 to form an undercut region 106. This undercut region 106 results in an air gap which has a different index of refraction than the index of refraction of the light transparent material forming layer 96. Thus, light emitted from the edges of active layer 100 may be totally reflected off the 45� mirror surfaces 104' and allowed to partially reflect to provide feedback for the active laser diode layer 100 and, ultimately, laser emission out through the bottom of substrate 98, in a plane normal to the plane of the p-n junction, as shown by the dotted lines in FIG. 7d.
V. Fabrication of Spheroids
FIG. 8 will be used to describe yet a further embodiment of the invention in which a spherical surface 202 may be formed adjacent a buried active layer 218 formed in a laser diode device. In the device of FIG. 8 it is assumed that the starting structure is basically as shown in FIG. 3 with certain details omitted for simplicity. In the embodiment of FIG. 8, curved terraces instead of planar terraces or steps are formed on wall 220 opposite to, but adjacent the light emitting edge 230 of buried active layer 218 to provide a two-dimensional parabaloid mirror for light emitted from the edge 230. In this example, the mask forming oxide would be appropriately dimensioned to project circular curves at the etch-stop surfaces 228 and 226.
This completes the description of the preferred embodiments of the invention, however, it is to be understood that while lasers using a heterojunction of the quaternary III-V alloys of indium gallium arsenide phosphide have been chosen to illustrate the invention; other alloys may be utilized equally as well. As an example, alloys of the IV-VI semiconductors, such as germanium IV and selenium VI and lead and tellurium may be utilized. Similarly, instead of indium phosphide, other III-V alloys could be considered, such as gallium antimonide.
The term quaternary III-V alloy of InGaAsP means that the elements are proportioned according to the formula, Inx Ga1-x Asy P1-y or the equivalent mole fraction formula In0.5x Ga0.5-0.5x As0.5y P0.5-0.5y. Also, the invention is not to be limited to any particular etchant, merely that the second etchant has to be capable of etching the active layer with negligible etching of the buffer layer or the top layer.
While the heretofore described embodiments have been explained in connection with the use of a wet chemical etching process, it is also contemplated that other means of producing the undercuts or grooves may be realized by those skilled in the art, such as plasma etching.
The process herein described could be used for fashioning any type of mirror surface, not merely vertical or parabolic. Hyperbolic and elliptical surfaces can be envisioned utilizing the teachings of this invention.
While the particular embodiments of the invention disclosed herein have been fabricated utilizing LPE techniques, it should be emphasized that suitable layers could be formed using other deposition techniques, such as vapor phase epitaxy or molecular beam epitaxy. Additionally, whereas the substrates enumerated herein have been n-type indium phosphide, it is clear that the substrates could be p-type, in which case the top layer would be of opposite type conductivity. Also, additional quaternary or other layers may be present in addition to those layers above enumerated.
It is envisioned that the approximate final contour of the mirror surfaces may be achieved by discrete etchant steps, as explained herein, and the steps filled in by supplying material from an external source, such as by depositing material by LPE, instead of using the mass transport phenomenon to smooth out the approximated surface contour.
While most of the embodiments herein described are primarily concerned with laser oscillator devices, it is possible to use the concepts of the invention for light amplification. For example, in the embodiment of FIG. 7, the undercut volume 106 may be omitted and instead of reflecting light at this interface for feedback purposes, light may be fed into the substrate on one side and amplified in the acitve layer 100 and taken out the other side.
Hence, the invention is not to be construed as limited to the particular embodiment shown and described herein. There are many equivalents to these specific embodiments and such equivalents are intended to be covered by the following claims:
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2005 Ft. Lauderdale FL. (FUN) Signature Sale #360
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Choice Mint State 1801 Capped Bust Eagle1801 $10 MS64 PCGS. Breen-6843, B. 2-B, Taraszka-25, R.3. A magnificent coin for the specialist who demands Choice quality and eye appeal for their collection. The surfaces are clean and pleasing to the eye, although we'll note some minor nicks to serve as identification markers. Two small scrapes reside in the field inside the third star a bit closer to Liberty's curl, another tick is found mid-field between Liberty and the sixth star point. Faint adjustment marks through LI of LIBERTY with others even fainter along the rim of the obverse. A couple of other ticks reside above and left of Liberty's ear, hidden somewhat by her copious curls. Satiny mint luster throughout, and the coin displays very even yellow-gold color. The obverse die has clashed with the reverse die with vertical lines from the shield on Liberty's cap but the reverse die shows no evidence of clashing. About as nice as this date is ever found, and despite being the commonest die variety the total known in this lofty grade remains paltry. NGC and PCGS have graded a combined 60 specimens this high, but importantly just two finer.(#8564) (Registry values: P1) (NGC ID# 2627, PCGS# 8564)
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text:
Rural Housing Service:
Agency Has Overestimated Its Rental Assistance Budget Needs over the Life of the Program
GAO-04-752: Published: May 20, 2004. Publicly Released: May 20, 2004.
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The Rural Housing Service's (RHS) Section 521 Rental Assistance Program provides rental subsidies to about 250,000 rural tenants through 5-year contracts with project owners; 20-year contracts were also issued from 1978 through 1982. In early 2003, RHS reported hundreds of millions of dollars in unexpended balances, primarily tied to 5- and 20-year contracts issued from 1978 through 1982. Since contracts remain active until all funds are expired, some of these contracts will likely last as long as 38 years. GAO was asked to assess (1) the activity level of rental assistance contracts issued from 1978 through 1997 that have unexpended balances and the possibility of deobligating these balances, and (2) the activity level of rental assistance contracts issued from 1998 through 2002 and the accuracy of RHS's estimates of the rate at which these funds would be used. The Department of Agriculture commented on our responses to these questions.
Based on their age, contracts (both 5 and 20 year) issued from 1978 through 1997 should have expired by the end of 2002. As of June 2003, approximately 18 percent of these contracts were still active, accounting for $605 million in unexpended balances. Most of this amount ($510 million, or 84 percent) involved the 32 percent of the contracts from 1978 through 1982 that were still active. At current spending rates, it will take another 7 years for these contracts to expend their funds, 8 years after the last of the 20-year contracts were expected to expire. Contracts issued from 1983 through 1997 should expend their remaining funds in 2004. According to USDA, any effort to recapture the remaining unexpended funds associated with rental assistance agreements entered into from 1978 through 1982 would result in a breach of those contracts and would subject USDA to liability. A s of June 2003, 74 percent of the total number of contracts issued in 1998 were still active, even though RHS expected these contracts to run out during 2003, suggesting that these contracts may have been overfunded. About 25 percent, or $114 million, of the funds remain from the 1998 contracts, and about 35 percent, or $208 million, remain from the 1999 contracts. Furthermore, only 11 percent of the funds from the contracts issued in 2002 were spent during the contracts' first 1.5 years, suggesting that many of these contracts are expending their funds more slowly than RHS anticipated. Based on current spending rates, and allowing for inflation, the average contract issued during these years will likely run out of funds during its sixth year. GAO analysis of rental assistance payment data showed that the agency has overestimated its budget needs almost every year since 1990, the earliest year for which GAO gathered data. Just as GAO found that contracts issued from 1978 through 1997 have lasted beyond their intended terms, it appears that RHS has overestimated its budget needs over the life of the rental assistance program.
Jul 6, 2015
Troubled Asset Relief Program:Treasury Could More Consistently Analyze Potential Benefits and Costs of Housing Program ChangesGAO-15-670: Published: Jul 6, 2015. Publicly Released: Jul 6, 2015.
May 19, 2015
Rural Housing Service:Progress on GAO Recommendations and Preliminary Observations on Loan Guarantee Risk ManagementGAO-15-625T: Published: May 19, 2015. Publicly Released: May 19, 2015.
Apr 16, 2015
Persons with HIV:Funding Formula for Housing Assistance Could Be Better Targeted, and Performance Data Could Be ImprovedGAO-15-298: Published: Apr 16, 2015. Publicly Released: Apr 16, 2015.
Apr 9, 2015
- Data Use and Regulatory Status of the Indian Housing Block Grant ProgramGAO-15-353R: Published: Mar 10, 2015. Publicly Released: Apr 9, 2015.
Mar 16, 2015
Military Base Realignments and Closures:Process for Reusing Property for Homeless Assistance Needs ImprovementsGAO-15-274: Published: Mar 16, 2015. Publicly Released: Mar 16, 2015.
Feb 4, 2015
Department of Housing and Urban Development:Violation of Anti-Lobbying Provision and the Antideficiency ActGAO-15-360T: Published: Feb 4, 2015. Publicly Released: Feb 4, 2015.
Oct 7, 2014
Housing Finance System:A Framework for Assessing Potential ChangesGAO-15-131: Published: Oct 7, 2014. Publicly Released: Oct 7, 2014.
Aug 1, 2014
Manufactured Housing:Efforts Needed to Enhance Program Effectiveness and Ensure Funding StabilityGAO-14-410: Published: Jul 2, 2014. Publicly Released: Aug 1, 2014.
Mar 31, 2014
Programa Para Mitigar Activos Problemáticos:Es necesario un mayor esfuerzo en el control de préstamos equitativos y en el acceso a los programas de vivienda por parte de personas sin dominio del inglésGAO-14-457: Published: Mar 31, 2014. Publicly Released: Mar 31, 2014.
Mar 27, 2014
Native American Housing:Additional Actions Needed to Better Support Tribal EffortsGAO-14-255: Published: Mar 27, 2014. Publicly Released: Mar 27, 2014.
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Giesler, B; Salb, T; Weyrich, T; Dillmann, R; (2002) Using a Panoramic Camera for 3D Head Tracking in an AR Environment. In: Proceedings of 9th IEEE Int. Conference on Mechatronics and Machine Vision in Practice 2002. (pp. 10 - 12). : Chiang Mai, Thailand.
Full text not available from this repository.
|Proceedings paper
|Using a Panoramic Camera for 3D Head Tracking in an AR Environment
|UCL classification:
|UCL > School of BEAMS > Faculty of Engineering Science > Computer Science
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30 year old woman | Martinez, CA, USA | Seeking men 18-35 within 50 miles of Vallejo, CA
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I would love to meet someone that can handle my strong personality and a man that can appreciate me for me. I'm currently a business manager for a French cosmetic line, and I'm enjoying it so far. I just don't have enough time to meet my Mr. Right; so, hopefully Match.com will help! I love to learn knew things and would love a stimulating conversation with someone. I love going to the beach and going out to the city for the day. Night life is always fun!! I love comedies; they are my favorite because I love to laugh. I know there is so much more...please just ask! I do have a request. Please do not write me an email with one word written in the body of the message it's really annoying when I get a "hey ;)" message I mean honestly what is my response supposed to be? Let's get a little interesting fellas! Also, if you have 26 pictures of you jumping out of a plane, you with your friends, you in college when you graduated in 2003, and anything really unnecessary please do us ladies a favor and cut it down to I don't know maybe 4-5 pictures of just YOU the way you look now that would be amazing. Im really blunt, but a really nice, funny, happy person. I just don't want to waste my time or yours. Thank you come again and have a nice day!!!!!! :)
Coffee and conversation , Business networking , Cooking , Dining out , Hobbies and crafts , Movies/Videos , Museums and art , Music and concerts , Nightclubs/Dancing , Performing arts , Playing cards , Shopping/Antiques , Travel/Sightseeing , Volunteering , Wine tasting
Baseball, Bowling, Dancing, Running, Swimming, VolleyBall, Walking / Hiking, Yoga
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I have two Yorkies named Zeus and Venus, and I love them dearly!
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California State University, Sacramento, Sacramento, CA
I know this is weird, but I Love Lucy literally...
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Blow by Blow, it was fabulous!
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
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Business Manager of a cosmetics line.. Its my passion.. =) Although I am thinking of going back to school in the future because I would like to teach when I retire from this career.
|$50,001 to $75,000
|$35,001 to $50,000, $50,001 to $75,000, $75,001 to $100,000, $100,001 to $150,000, $150,001+
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text:
Originally written on Inside the Hall | Last updated 11/7/12
Indiana coach Tom Crean joined SiriusXM's "Inside College Basketball" show Tuesday evening and talked to Jeff Goodman and Bruce Pearl about the suspensions of Peter Jurkin and Hanner Mosquera-Perea. His comments are below. On the facts of the case, specifically Mark Adams being labeled a booster for donations from 1986-1992: "The facts are pretty self-explanatory when you really read through it and that's really what it is. Now there's going to be an appeal process, I don't know how you couldn't when you get something like that." On the team's depth, and the ruling's effects on Jurkin and Masquera-Perea: "There's no question that that hurts us. And they are going to play for this team, there's no question they're contributors in this program right away. The bigger concern right now is for both Hanner and Peter individually. Because right now, they don't really know why this is happening. And it's really hard for us to explain it to them because I don't really know why thi
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A leaked HTC roadmap details future firmware updates
We love leaked roadmaps. The popular tipster LlabTooFeR is giving us another spicy document detailing the upcoming firmware updates for the latest HTC smartphones.
The recently announced and launched Android 4.4.4 KitKat revision will become available this summer on the five latest One devices - One, One mini, One (E8), One mini 2 and One (M8). The dual SIM flavor of the original One (M7) won't be getting the Android 4.4.4 though.
HTC Sense v6.0 is coming to the KitKat-running HTC One mini in July. The update was previously confirmed and will begin rolling out any moment now.
Finally, the recently announced Android L is under evaluation for a plethora of HTC smartphones - One (M8), One (M8) GPE, One (M8) Dual SIM, One mini 2, One (E8), One, One GPE, One Dual SIM, One Max, One mini, Butterfly S, Desire 816 and Desire 610. The Android L compatible devices will be announced this Fall with proper release dates for the new firmware.
We've seen already such roadmaps turn out the real deal and LlabTooFeR has a good track record. So, if you own some of these HTC smartphones, you should probably put some trust into this roadmap.
A leaked HTC roadmap details future firmware updates - reader comments
- Gamesbond
What about HTC One Dual Sim? Not even a year old and it is under evaluation for Android L. HTC, are you insane?
- Reply
- 2014-07-21 13:10
- bCfH
- PhoneNerd
Before rooting my phone, I'm going to stick with the stock rom and wait for the new update for my M8.
- Reply
- 2014-07-01 11:53
- pWQx
- Anonymous
I absolutely love HTC phones I have had HTC desire (bravo) the sensation and the one x and I'm using the HTC one m8 absolutely love them all and I don't mind waiting for the updates #htc forever
- Reply
- 2014-06-30 23:05
- 9AdT


text:
New to linux need help
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Join Date: Jan 2004
Location: PA
Posts: 1
New to linux need help
Ok I have Mandrake Linux 9.1. I got it cause it's suppose to be the easiest one to install and use. Riiight
Well Im new to Linux. This will be my first time using it. Okay so I did the install everything was going fine. The computer rebooted and everything seemed fine everything loaded. Then I got to this login screen, so I put my user name and password and I got some username@localhost thing and thats not want I want I want the GUI. So I started looking around to see what to do. I found that this is cause if the monitor was not configured.
So I log back in. typed the xf86config and set all that up. After all that I put startx and I got some errors.
Failed to initialize the Nvidia Kernel module
Screen found, but none have a usable configuration
Fatal server error: no screen found
XIO: fatal error 104 (connection reset by peer) on x server .0.0
I then tried reinstalling and the same problem and I selected everything I had for the video card and screen, but it still says the same thing.
Then after that I tried installing windows, but it wont install cause it says there is no hard drive install.
So Im pretty much lost right now. This is my computer setup.
Athlon XP 2100+
Crucial 512mb DDR PC 2100
Plextor Plexwriter 52x32x52
WD Raptor 36gig
Leadtek Geforce3 TDH 64mb
NEC MultiSync FE700+
Ok I was told to download the lastest linux drivers. I downloaded the no my windows machine and burned it to a cd. Now how do I install it from the cd?
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- Musician's Friend Best Selection, Price & Service. Guaranteed.
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The redesigned 4 1/3 octave, height-adjustable Cadenza Rosewood Marimba features graduated tone bars that promotes full tone quality and projection, pneumatic struts for easy height adjustment and hinged resonators and rails and a two-piece crossbar make tear down a simple task. Standard with 4" casters and drop cover.
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United States
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Labdanum 18 / Ciste 18 by Le Labo
I 'get' why some people love this, but also why some are totally underwhelmed. This fragrance is everything that's wonderful about amber - warm, cuddly, powdery, grounding, close to earth, hearth, and security. That's a lovely set of adjectives, and why amber is consistently loved. I just can't diss its raison d'etre. This one does the job.
18th July, 2012


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1825 $2 1/2 MS66 NGC. Breen-6128, BD-2, High R.4. ...
2011 October 13-16 US Coins Signature Auction- Pittsburgh #1160
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David L. Lawrence Convention Center
1000 Ft. Duquesne Blvd.
Pittsburgh, PA 15222
|Printable auction results for all items in the 2011 October 13-16 US Coins Signature Auction- Pittsburgh.
1825 BD-2 Quarter Eagle, MS661825 $2 1/2 MS66 NGC. Breen-6128, BD-2, High R.4. Bass-Dannreuther Die State a/a, struck from perfect dies with no clash marks, die cracks, or lapping on either side. The total mintage of quarter eagles in 1825 was reported as 4,434 coins, from three different die marriages, the combination of two obverse dies and two reverse dies. The varieties designated as BD-1 and BD-2 used a reverse die that had been used earlier for the 1821 quarter eagles.
Second Finest Known of the Issue
Second Finest Known of the Issue
With an estimated population of 80 to 100 coins, the BD-2 is the only available 1825 quarter eagle variety. The other two varieties are both major rarities with an estimated population of 12 to 15 coins each, according to Dannreuther. The present piece is the finest NGC-certified 1825 quarter eagle, while PCGS has graded one finer PR67 coin (9/11). The finer PCGS certified specimen, graded MS67, appeared in Auction '88 (RARCOA, 8/1988), lot 1872. We believe the present example is the second finest known 1825 quarter eagle.
This impressive Premium Gem has sharp design motifs. The brilliant yellow obverse is fully prooflike with satin luster on the devices. The reverse is also pristine with satin luster. The fields are reflective though not as deeply mirrored as on the obverse. This amazing coin, the second finest known, behind the aforementioned MS67 specimen, is a coin destined for the finest cabinet.
Ex: Stack's (3/1985), lot 756; Auction '89 (David Akers, 7/1989), lot 1363; Stack's (10/2008), lot 1149; Stack's (3/2009), lot 5743; Stack's (1/2010), lot 3452.(Registry values: P5) (NGC ID# 25FG, PCGS# 7664)
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34 year old man | Baltimore, MD, USA | Seeking women 25-37 within 50 miles
Live life to the fullest! Never regret ,mostly be happy
I'm a loyal, driven, goal orientated person. I'm looking for the same qualities in a women I like a driven woman who can enjoy a night out as well as a quiet evening at home. Although I can be guarded at first, once you earn my trust I'm an open book.I'll try anything once I love going out ,movies walking around downtown Baltimore, all types of sports ,& a good conversation about almost anything especially a good political debate I like to cook & hang out with my family especially my daughter so you must love kids I do, nothing more innocent than a kid there awesome been single for a while finally decided to give match a try reluctantly ready to settle down with that one person that completes me hope that doesn't sound too corney lol but its the truth I'm a very passionate ,loving, loyal guy I love love music any kind it doesn't matter what it is but I listen to mostly rock & alternative rock Indi Rock & r&b I love instruments Especial GUTAIRS so if one is playing I'll probably listen I love to break down a song like what is the meaning & why the artist wrote it I like meeting new people &trying new things I'm very open minded & traditional at the same time lol if that makes since I'll try almost anything once I'm not perfect who is but I'm trying to get there with all that being said lol if you like my profile send me an email or wink & I'll get back at you as soon as I can
Coffee and conversation , Cooking , Dining out , Hobbies and crafts , Movies/Videos , Museums and art , Music and concerts , Playing cards , Playing sports , Political interests , Religion/Spiritual , Travel/Sightseeing , Watching sports , Wine tasting
Baseball, Basketball, Billiards / Pool, Bowling, Football, Golf, Hockey, Martial arts, Other types of exercise, Soccer, Swimming, Tennis / Racquet sports, Walking / Hiking, Weights / Machines
I exercise 1-2 times per week.
Buffalo Wild wings
Food: steak and potatoes Movies: Life, Shawshank Redemption, The Notebook.
Wallstreet Journal, Huffington Post
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What he is looking for
|5'10" (177cms)
|4'9" (144cms) to 6'2" (187cms)
|Body type:
|Slender, About average, Curvy, Athletic and toned
|No preference
|No preference
|No Way
|No preference
|No preference
|Travel / Hospitality / Transportation
|No preference
|$35,001 to $50,000
|No preference
|Never Married
|No preference
|Have kids:
|Yes, and they sometimes live at home (1)
|No preference
|Wants kids:
|Black / African descent
|No preference
|Christian / Catholic
|No preference
|High school
|High school


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EXCLUSIVE: Hamptons Resident On 1-Woman Crusade Against 'McMansions'
They are the homes that dreams are made of – 12-foot ceilings, eight bedrooms. Mega mansions are popping up all over the Hamptons. But one resident said "not in my backyard," so she's taking her fight to federal court.
Beach Barriers In Hamptons Pit Summer People Against Regular Residents
Some of the summer people are building barriers to protect their homes from future storms, but they are forcing the water to eat away at public peaches.
Hamptons Small Businesses Prepare For Summer, Hope For Good Weather
It's a very busy time for business owners in the Hamptons, as they prepare for what is for many their only season – the summer season.
New Jersey Man Sues Dr. Oz Over Insomnia Treatment
A New Jersey man claims an insomnia cure promoted on "The Dr. Oz Show" left third-degree burns on his feet.
Southampton Goes To Court Over Sandy-Damaged Cars
Environmentalists say they threaten the water supply and residents are deeply concerned, as the cars could catch fire or leak chemicals.
Report: Another Alligator Found On Long Island
Yet another alligator has been found on Long Island, this time in the window well of a home in the Hamptons.
Former New York Times Publisher Arthur Ochs Sulzberger Dead At 86
The newspaper reported that his family said Sulzberger died Saturday at his home in Southampton, N.Y., after battling a long illness. He had retired in 1992 after three decades at the paper's helm, and was succeeded by his son, Arthur Jr.
L.I. Sex Offender Accused Of Placing Hidden Camera In Dressing Room At Fashion Show
The 51-year-old placed a hidden video camera inside the dressing room and recorded four women disrobing, police said.
L.I. Boy Begins Season On All-Girls Field Hockey Team
Earlier this year, Keeling Pilaro had been denied permission to compete on an all-girls varsity team on the basis that he was too skilled to play against girls.
On Foreign Soil: British U.N. Ambassador Talks NYC's 'Vibrancy' And More
He's been posted to Pretoria, Islamabad, and Paris. But now, Sir Mark Lyall Grant is an Englishman in New York.
Jason Kidd Appears In Long Island Courtroom On DWI Charge
A former star on one area NBA team, now a new player on the other, was in a Long Island courtroom Wednesday morning.
Southampton Police: Man Arrested After Trying To Steal Chips And Beer
If you want chips and beer, you're going to have to pay for them. Otherwise, prepare to be arrested.
BBQers Rescued By Coast Guard After Getting Stuck On L.I. Sandbar
Having a barbecue on a sandbar off Shinnecock Inlet on Long Island didn't appear to be dangerous, that is until the tide came in.
Search To Resume For Missing Jet Skier On L.I.
Southampton police said the 29-year-old man and a woman he was with fell into Mecox Bay when their jet ski overturned around 7 p.m. Sunday.
Lawyer: Knicks' Jason Kidd Pleads Not Guilty To DWI In Hamptons
Jason Kidd mentoring Jeremy Lin was a nice story last week. Then Kidd was arrested on a drunken-driving charge, and Lin's departure from New York for a "ridiculous contract" in Houston became more realistic.


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Recipe by Campbell's Kitchen
"Rolls of tender Pepperidge Farm® Puff Pastry are filled with spicy keilbasa and honey mustard and are served with extra honey mustard for dipping."
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1 sheet
Pepperidge Farm® Puff Pastry
1 tablespoon
2 tablespoons
honey mustard
1 (16 ounce) package
turkey or beef kielbasa , cut into 8 pieces
I loved these...simple, yet a bit different than the typical "pigs in a blanket." They were perfect for our Super Bowl supper and the leftovers were good for breakfast. Tasty stuff!!
I've done this with crescent rolls. Just open the tube, roll each piece up with the ends sticking out, add a small piece of cheese if you like, and bake. They are wonderful! And much easier to work with than puff pastry.
8 Ratings
I made a bunch of changes to the recipe - But it was fabulous! I only had filo dough - so i used 5 sheets of that (I sprayed PAM in between the sheets.) I used turkey deli and honey-mustard salad dressing to coat it. I placed the deli in the middle of the filo dough and folded the sides in. I brushed the top with an egg wash and sprinkled it with sesame seeds - I baked it for about 25 minutes - It was sooo good!
This is a very easy recipe. However, the only thing I did not like was the inside of the puff pastry was soggy. I cooked them until golden which was 25 minutes. So as a result the puff pastry kept falling off making it messy. I used mild pork sausage and dijon mustard instead.
This was just o.k. for me. Thought that the puff pastry was just too bland. I will stick with the crescent roll version. We wanted to love it, but just o.k. for us.
These were yummy, but I haven't worked with Puff Pastry too much and could use a bit more direction written into the recipe to help me work with the pastry.
* Percent Daily Values are based on a 2,000 calorie diet.
Spicy Honey Mustard Sausage Wraps
Serving Size: 1/8 of a recipe
Servings Per Recipe: 8
Amount Per Serving
Calories: 235
Calories from Fat: 127
French toast is such a perfect breakfast, light lunch, or even supper on these warm days.
Try one of our 100-plus cool cucumber salads.
Delicious recipes, party ideas, and cooking tips! Get a year of Allrecipes magazine for $7.99!
See how to make an elegant stuffed puff pastry main dish!
See how to make sausage in bite-size Pepperidge Farm® Puff Pastry cups.
These tasty apple morsels are an elegant alternative to traditional pie.


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CEF to Host Book Launch for The River Runs Black: The Environmental Challenge to China's FutureApr 29, 2004
Co-Sponsored by the Wilson Center's Asia Program and the Council on Foreign Relations
Nations Find Common Ground, Not Conflict, in Water PoliticsApr 29, 2004
Director Geoff Dabelko chaired "Water, Peace and Sustainable Development: Implementing Johannesburg to Prevent and Resolve Conflicts"
"Is Anybody Listening? The Impact of Global Environmental Politics Research"Apr 12, 2004
ECSP Director Geoff Dabelko participated in a roundtable discussion at the International Studies Association's annual conference in Montreal.
Experts Discuss NOVA's Earth Day Episode "World in the Balance" Airing April 20 on PBSApr 08, 2004
Lester Brown, Joel Cohen, Shanti Conly, and the producers Paula Apsell and Linda Harrar discussed stories from NOVA's new episode.
Wilson Center Scholar Quoted in Christian Science MonitorMar 31, 2004
Wilson Center Senior Scholar John Sewell was quoted extensively in the March 25, 2004, issue of the Christian Science Monitor
CEF Coordinator to Speak at Asia Society MeetingMar 17, 2004
CEF's Jennifer Turner will speak on Thursday, March 25, 7:00-8:30 pm at the Freer Gallery of Art, Meyer Auditorium for an Asia Society meeting: Yellow River: China's Sorrow, Glory and Disappearing Resource
Spotlight on New Environmental and Energy Initiatives in ChinaMar 11, 2004
Hoffman Institute's water work in Hunan; WRI's New Center for Transport and the Environment in Shanghai; and EPA's eebuildings Initiative
ECSP Director Speaks to Military Officers about Population, Health, and SecurityMar 10, 2004
Geoffrey Dabelko and Richard Cincotta of PAI addressed a group of senior military officers at the U.S. Army War College in Carlisle, PA.


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20 Bracelet Patterns: Macrame Bracelets, Friendship Bracelets, Hemp Bracelets, and More
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Vintage Inspired Eggshell Mosaic Bracelets
By: Tiffany Windsor
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Looking for jewelry craft ideas? Make Vintage Inspired Eggshell Mosaic Bracelets from Tiffany Windsor. This project looks great and won't take all day.
- Resin jewelry shapes
- Egg shells (brown or white)
- Aleene's Original Tacky Glue (in the gold bottle)
- Alcohol ink (color(s) of your choice)
- Beads (to coordinate with alcohol ink color)
- Thick clear glaze (for topcoat)
- Beading wire
- Jewelry clasp
- White craft pearls
- Crimp beads
- Bowl with water
- Sanding block
- Paper towels
Remove eggshells from eggs. Place shells in lukewarm water and soak overnight.
Remove white membrane from back of eggshells.
Set cleaned eggshells on paper towel to dry completely.
Break eggshells into small pieces.
Apply glue to jewelry shape.
Smooth glue with finger. Be sure to spread glue to all edges.
Place eggshell onto glue.
Press with finger. The eggshell will crack under finger and the glue will hold the cracked pieces in place. If desired, gently move pieces slightly to add space in between pieces.
You will need to move fairly quickly to add each eggshell piece as the glue can dry quickly.
Continue to cover entire surface with eggshells. Let glue dry overnight.
When glue is dry, use thumbnail to break off shells which overhang on edge.
Apply alcohol ink directly from bottle to top surface.
For a darker appearance, apply a generous amount. Let dry. Apply ink to side and bottom surface. Let dry.
For matching pearls, apply ink to surface of pearl.
When ink has completely dried, place face down on sanding block and rub back and forth.
Continue to sand top and edges until desired coloring is achieved. Check edges to see if any sharp edges remain. Sand to remove any remaining sharp edges. Wipe off excess dust with paper towel.
Apply glaze over top surface. Let dry overnight.
String pearls and jewelry pieces together to create bracelet.
To watch a video tutorial for this project, check out How to Make an Eggshell Mosaic Bracelet Video.
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maryellie 0224214
Jul 03, 2013
I love the idea, will probably try making the bracelet. Do not like the hidden advertisement.
- WAS THIS HELPFUL? YesNo
cindimuir 3755033
Jul 17, 2012
I can't wait to try this. What a wonderful way to use some of the eggshells from my hens. I actually have blue and green eggs!
- WAS THIS HELPFUL? YesNo
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