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A method is described for non-contact measuring the capacitance and the equivalent oxide thickness of ultra thin dielectric layer on a silicon substrate. The surface of a dielectric layer is electrically charged by a flux on ions from a corona discharge source until a steady state is reached when the corona flux is balanced by the leakage current across a dielectric. The flux is abruptly terminated and the surface potential of a dielectric is measured versus time. The steady state value of the surface potential is obtained by extrapolation of the potential decay curve to the initial moment of ceasing the corona flux. The thickness of a dielectric layer is determined by using the steady state potential or by using the value of the surface potential after a predetermined time. The method produces highly accurate results for oxide thickness below 40 Å with a demonstrated repeatability of a 0.03 Å in a series of 10 measurements. Alternatively, the rate of surface potential decay is calculated at the initial moment providing a measure of the charge dissipation on a dielectric capacitor. The capacitance of a dielectric layer is calculated from this rate.
1. A method of determining the thickness of a dielectric layer deposited on a semiconducting wafer, the method comprising:
depositing an ionic charge onto a surface of the dielectric layer disposed on the semiconducting wafer with an ionic current sufficient to cause a steady state condition;
measuring, via a non-contact probe, a voltage decay on the dielectric surface as a function of time; and
determining the thickness of the dielectric layer based upon the measured voltage decay.
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27. A method of determining the thickness of a dielectric layer deposited on a semiconducting wafer, the method comprising:
illuminating the dielectric surface;
depositing a precharging ionic charge on the dielectric layer;
depositing an ionic charge onto a surface of the dielectric layer with an ionic current sufficient to cause a steady state condition;
ceasing ionic charging after establishing the steady state condition;
measuring, via a non-contact probe, a voltage decay on the semiconducting wafer as a function of time after ceasing the ionic charging;
analyzing the voltage decay to determine a characteristic of the measured voltage decay, the characteristic of the measured voltage decay being selected from the group consisting of an initial surface potential, V0, a surface potential at a time greater than t=0, VD, and an initial rate of voltage decay, dV/dt|t=0; and
determining the thickness of the dielectric layer based upon the characteristic of the measured voltage decay.
Under 35 USC �119(e)(1), this application claims the benefit of provisional application Ser. No. 60/264,571, filed Jan. 26, 2001.
The invention relates to semiconductor wafer testing and more particularly to characterizing the thickness and capacitance in the presence of substantial leakage current of a dielectric layer on a semiconductor wafer.
As is known in the art, semiconductor devices often contain dielectric layers (e.g., silicon dioxide) grown/or deposited on a semiconductor substrate (e.g., silicon). Semiconductor wafers including dielectric layers are used in manufacturing microelectronic devices such as metal-oxide-semiconductor (MOS) capacitors, MOS-field effect transistors (MOSFET), and related integrated circuits.
During manufacture of microelectronic devices, the thickness of the dielectric layer must be frequently monitored with high precision. Typically, the dielectric thickness is measured by optical or electrical methods. Optical ellipsometric methods for determining a dielectric thickness are described for example in U.S. Pat. No. 5,343,293 and the references therein. An electrical method for determining the thickness of a dielectric utilizes capacitance measurements of MOS capacitors fabricated, for the test purposes, on the dielectric layer. Once measured, the capacitance can be used to calculate an "equivalent oxide thickness" (EOT), i.e. the thickness of a SiO2 layer that would produce the same measured capacitance. In other electrical methods, the dielectric thickness can be determined without fabricating MOS test capacitors by charging the surface of the dielectric layer with a corona discharge and measuring the resulting surface potential of the charged dielectric layer with a Kelvin or a Monroe probe. These techniques are discussed, for example, in U.S. Pat. Nos. 5,485,091, to R. L. Verkuil, and 6,037,797, to J. Lagowski et.al. In these methods a known electric charge ΔQC is placed on the surface of a dielectric layer (for example, on the surface of a SiO2 layer on a silicon wafer) by a precisely calibrated corona discharge source. The dielectric layer thickness can be determined from the value of ΔQC /ΔV where ΔV is the change of the dielectric surface potential caused by the charge ΔQc.
Due to substantial leakage of current across the dielectric layer, via tunneling, the methods described in U.S. Pat. Nos. 5,485,091 and 6,037,797 are ineffective for determining the thickness of ultra-thin dielectrics films, i.e. dielectric films having an EOT equal to or less than about 40 Å. When leakage current tunnels through the dielectric layer, the charge ΔQC is reduced by the amount of charge transported across a dielectric layer during the time of charging and measuring ΔV. In thicker dielectric layers, such as SiO2, the leakage current is typically below 10−12 A/cm2 for a corona charge, ΔQC, of about 2�10−7 C/cm2. During a typical measuring time for these techniques, e.g., 100 seconds, the leakage of current via tunneling through the thicker dielectric layer reduces ΔQC by about 10−10 C/cm2. The value 10−10 C/cm2, however, is practically insignificant relative to ΔQC, i.e., 2�10−7 C/cm2. For ultra-thin dielectric layers, the leakage currents are orders of magnitude larger than the leakage currents for thicker dielectric layers, e.g., often exceeding 10−9 A/cm2. As a result, leakage of current over a measuring time of 100 seconds will reduce the value of ΔQC by about 10−7 C/cm2 and will cause significant errors in calculating the thickness of the dielectric layer. Additionally, in high accuracy measurements on thin dielectric layers, the value of ΔV is typically corrected to account for a voltage drop, ΔVSB, across the semiconductor surface space charge layer by replacing ΔV with the expression ΔV-ΔVSB. Errors in determining the dielectric layer thickness are more severe in this instance because leakage current not only corrupts the value of ΔQC but also the calculation of ΔVSB.
In general, the invention relates to an apparatus and method for producing non-contact electrical measurements of capacitance and thickness of ultra-thin dielectric layers on semiconductor substrates (wafers). The apparatus and method produces effective and accurate measurements of the dielectric layer thickness despite substantial leakage of current across the layer and no apriori knowledge of the relationship between the leakage current characteristics, i.e., measured electrical properties such as voltage and current, and thickness of the dielectric layer. Ultra-thin dielectric layers have an equivalent oxide thickness equal to or less than about 40 Å. As used herein, the term "dielectric" includes but is not limited to oxides, e.g., SiO2, Ta2O5, Al2O3, nitrides, e.g. Si3N4, and barium strontium titianate (BST). The non-contact electrical technique can be used to record multiple, repeatable measurements of ultra-thin dielectric capacitance and thickness at the same location on the wafer under highly reproducible conditions.
In an aspect, the method of determining the thickness of a dielectric layer on a semiconductor wafer includes depositing an electric charge sufficient to cause a steady state condition in which charge current is equal to the leakage current; measuring the potential of the dielectric surface; and comparing the measured parameters to calibrated parameters to derive the dielectric layer thickness.
In another aspect, the method of determining the thickness of a dielectric layer deposited on a semiconducting wafer includes depositing an ionic charge onto a surface of the dielectric layer deposited on the semiconducting wafer with an ionic current sufficient to cause a steady state condition; measuring, via a non-contact probe, a voltage decay on the dielectric surface as a function of time; and determining the thickness of the dielectric layer based upon the measured voltage decay. The method can further include measuring the voltage decay after terminating the deposition of ionic charge.
In another aspect, the method of determining the thickness of a dielectric layer deposited on a semiconducting wafer includes depositing an ionic charge onto a surface of the dielectric layer with an ionic current sufficient to cause a steady state condition; ceasing ionic charging after establishing the steady state condition; measuring, via a non-contact probe, a voltage decay on the semiconducting wafer as a function of time after ceasing the ionic charging; analyzing the voltage decay to determine a characteristic of the measured voltage decay, the characteristic of the measured voltage decay being selected from the group consisting of an initial surface potential, V0, a surface potential at a time greater than t=0, VD, and an initial rate of voltage decay, dV/dt|t=0; and determining the thickness of the dielectric layer based upon the characteristic of the measured voltage decay.
Embodiments of the invention can include one or more the following. The dielectric layer has a thickness of about 40 Å or less. The steady state condition results when the ionic current equals a leakage current flowing from the semiconducting wafer and across the dielectric layer. The step of determining the thickness of the dielectric layer includes determining the initial surface potential, V0, on the dielectric layer from the measured voltage decay. The initial surface potential, V0, is determined by extrapolating the measured voltage decay back to t=0. The step of determining the thickness of the dielectric layer further includes using the initial surface potential, V0, in a linear expression to calculate an equivalent oxide thickness, T, of the dielectric layer, the linear expression given by the relationship V0=aT+b. The coefficients a and b in the linear expression are determined by a calibrating procedure. The calibrating procedure comprises recording a decay voltage on a plurality of semiconducting wafers each having a known dielectric layer thickness, and determining from each measured voltage decay an initial surface potential. The semiconductor wafer is p-type silicon having a doping of about 1�1015 cm3, the dielectric layer is SiO2, the corona charge has positive polarity, the thickness of the dielectric layer is about 40 Å or less, a is about 88 mV per Å, and b is about −550 mV. The method further includes rescaling the coefficient b by adding the value Δb, where Δb[mV]=−26 ln(NA2/NA1) in which NA1 is a dopant concentration in a calibrating semiconducting wafer having a known dielectric layer thickness and NA2 is a dopant concentration in the semiconducting wafer being measured. The step of determining the thickness of the dielectric layer includes determining the surface potential at a time greater than t=0 on the dielectric surface from the measured voltage decay. The surface potential is determined at a time of about 1 second after t=0. The step of determining the thickness of the dielectric layer includes using the surface potential at a time greater than t=0, VD, to calculate a dielectric thickness, T, via the expression VD=cT+d, in which the coefficients c and d are derived from a calibrating procedure. The method further includes the step of determining the thickness of the dielectric layer includes using the surface potential at a first time greater than t=0, VD1, and a second time greater than t=0 and different than the first time, VD2, to calculate a dielectric thickness, T, via the expression VD1−VD2=c1T+d1, in which the coefficients c1 and d1 are derived from a calibrating procedure. The calibrating procedure includes measuring a voltage decay on a plurality of semiconducting wafers each having a known dielectric layer thickness, and determining from each measured voltage decay a surface potential, VD, at the same time in the decay, the time being greater than t=0. The steps of depositing a charge onto a surface of the dielectric layer, measuring the voltage, V0, and determining the thickness of the dielectric layer all occur in about 7 seconds or less. The method further includes determining the capacitance of the dielectric layer deposited on the semiconducting wafer. The capacitance is obtained from the relationship Cox=JC/R, where JC the ionic current at the steady state condition, R is the initial voltage decay rate, dV/dt|t=0, derived from the measured voltage decay. The voltage decay is measured after terminating the deposition of ionic charge. The steps of depositing ionic charge, measuring the voltage decay, and determining the thickness are performed on a measurement area smaller than a total surface area of the semiconducting wafer. The method further includes depositing a precharging ionic charge on the dielectric layer. The method further includes illuminating the dielectric surface to eliminate the semiconductor surface depletion layer and its contribution to V0, VD, and dV/dt|t=0. The method further includes performing the steps of depositing ionic charge, measuring voltage decay, and determining the dielectric thickness on a plurality of measurement sites on the dielectric layer.
In ultra-thin dielectric layers, the leakage current mechanism may differ from the mechanism of leakage in thicker dielectrics layers. For example, Fowler-Nordheim (F-N) tunneling dominates in thick SiO2 layers that exceed 40 Å. In this process, electrons tunnel over a distance of about 40 Å from the Silicon to the SiO2 conduction band and then travel across the rest of SiO2 layer. For SiO2 layers thinner than 40 Å, electrons tunnel directly across the entire dielectric layer, producing much larger currents for lower oxide voltages. For non-SiO2 dielectrics, leakage current mechanisms, other than F-N tunneling or direct tunneling, such as Schottky emission or Frenkel-Poole emission can be dominant. (For discussion of conduction processes in insulators, see for example, "Physics of Semiconductor Devices" by S. M. Sze, John Wiley & Sons, 1981; p. 402 to 407). As a result, the exact tunneling current equation relating the layer thickness to electrical parameters such as the tunneling leakage current and the voltage drop across a dielectric layer may not be known apriori. Advantageously the method of this invention, unlike the method discussed in U.S. Ser. No. 09/451,652, can be used to determine the thickness of a dielectric layer without knowing apriori the exact tunneling current equation relating the measured electrical parameters to the dielectric layer thickness. The apparatus and methodology can be used to determine dielectric layer thicknesses with a 0.01 Å sensitivity, a factor of 10 better than standard methods, a repeatability of about 0.03 Å for a 30 Å thick dielectric layer and about 0.04 Å for a 17.6 Å thick dielectric layer, and a tolerance to changes in the corona ionic current of about a factor of 20 greater than standard methods.
The details of one or more embodiments of the invention are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will be apparent from the description and drawings, and from the claims.
FIG. 1 is a schematic representation of a wafer measurement system for determining dielectric layer thicknesses.
FIG. 2 is a graph of the surface potential decay.
FIG. 3 is a graph of calibrating data for ultra-thin SiO2 dielectric layers recorded with the test system.
FIG. 4 is graph of calibrating data for SiO2 dielectric layers having thicknesses greater than about 40 Å recorded with the test system.
FIG. 5 is a graph of tunneling currents as a function of oxide field.
FIG. 6 is a graph schematically representing the effects of self-adjusting surface potentials.
FIG. 7 is a graph of calibrating data for SiO2 layers utilizing time delay methodology and negative corona charging.
FIG. 8 is a graph schematically representing a time delay methodology based on two delayed measurements.
The methodology for measuring ultra-thin dielectric layer thicknesses includes depositing an electric charge using a corona current, JC, from a corona discharge source, onto a dielectric layer of a semiconductor wafer to produce a steady state condition in which the leakage current, JLEAK, equals JC; terminating the corona current; measuring electrical parameters of the wafer, such as the dielectric potential or the potential decay rate; and comparing the measured electrical parameters to calibrated parameters to derive the ultra-thin dielectric thickness.
Referring to FIG. 1, a computer controlled test system 10 is used to measure the oxide thickness of a top dielectric layer 13 a placed on a semiconductor wafer 5 on a testing site 15 a. An example of the computer controlled test system 10 can be found in U.S. Pat. application Ser. No. 09/451,652 by Lagowski et al. which is incorporated herein in its entirety by reference.
Semiconducting wafer 5 includes a semiconductor substrate wafer 11 (e.g., silicon) disposed between overlying and underlying dielectric layers (e.g., SiO2, Ta2O5, A1 2O3, Si3N4, and barium strontium titanate (BST)) 13 a, 13 b. Semiconductor substrate wafer 11 is connected to the ground potential via a back-contact device 17 in electrical contact with grounded wafer chuck 18. Test system 10 measures the oxide thickness by depositing electric charge onto a surface 15 of top dielectric layer 13 a, and then monitoring the voltage decay due to current flow through this dielectric layer into or from semiconductor substrate wafer 11.
Test system 10 includes a computer 12 that controls components of the system to apply electric charge to and measure the voltage decay rate, ΔV/Δt, at testing site 15 a. Computer 12 also calculates an initial surface potential, V0, i.e., the steady state surface potential that results when the electric charging is first terminated, an initial rate of voltage decay, R=dV0/dt|t=0, the oxide capacitance, and the oxide thickness from voltage data obtained for testing site 15 a. The term "initial" denotes values of surface potential and decay rate that are extrapolated back to time zero, t=0, i.e., the moment of ceasing corona charging of the dielectric layer. The system 10 includes a testing device that contains a charging station 14 and a charge measuring station 19 both of which are translatable, using a solenoid 20, relative to a chuck 18.
Wafer 5 is held, e.g., by vacuum suction, onto chuck 18, which is formed of an electrically conductive material (e.g., aluminum) and is connected to ground potential. A back-contact device 17 protrudes through dielectric layer 13 b making electrical contact to semiconductor substrate wafer 11, and connecting it to the ground potential. An example of a back-contact device capable of protruding through dielectric layer 13 b can be found in U.S. patent application Ser. No. 09/295,919 by Lagowski et al. which is incorporated herein in its entirety by reference. Chuck 18 is mounted on a moveable stage (not shown in FIG. 1) which can position wafer 11 under charging station 14 (X1-position) and charge measuring station 19 (X2-position). Charging station 14 and the charge measuring station 19 are spaced apart from each other on a mount 21 at a fixed distance X0, e.g., about 2 cm, between their centers. Solenoid 20 is used to translate charging station 14 and measuring station 19 by a distance X0 such that the measuring station is precisely above the wafer at the X1-position, i.e., the position previously occupied by the charging station.
Charging station 14 includes a corona discharge source 16 and a light source 23. Corona discharge source 16 includes a corona charging wire 14 a which receives a high voltage potential of either a positive or negative polarity as needed and a corona-confining electrode ring 14 b, e.g., a metal ring, held at ground potential or a bias so that corona charge is deposited uniformly on a surface 15 of dielectric layer 13 a preferably within a radius of about 6 to about 10 mm. Charging station 14 is able to produce a controlled ionic discharge flux (ionic) current suitable for depositing charge with a flux adjustable from about 10−6 to about 5�10−6 A/cm2. In general, test system 10 deposits a corona ionic current on the oxide to reach, in less than about 10 seconds, a steady state condition in which the tunneling current, JLEAK, flowing across dielectric layer 13 a is equal to corona ionic current, JC, without generating traps in the dielectric that result from large corona ion fluxes. Typically, for ultra-thin dielectric layers, a corona ionic current of about 2 μA/cm2 will reach a steady state condition in about 3 seconds without creating dielectric traps. The control of the corona ionic current results from adjusting the high voltage corona power supply current, the height of corona electrode above the wafer, and/or the bias voltage applied between the corona charging wire and the ion flux confining electrode.
Test system 10 can deposit either a positive or negative charge on the surface. Typically, test system 10 positively charges the surface with a positive corona discharge because a negative corona discharge is more difficult to control with respect to charging uniformity. Non-uniform surface charging can produce non-uniformity in the initial voltage, V0, which in turn would generate errors in deriving the oxide thickness. As will be described in greater detail below, non-uniformities in surface charging can be overcome by deriving a dielectric layer thickness from electrical parameters measured after a specific delay time relative to the moment of ceasing the corona charging, rather than at a time t=0.
Charge measuring station 19 includes a light source 25 and a contact potential sensor 22, such as a Kelvin probe or a Monroe-type probe, which is used to measure the contact potential of dielectric layer 13 a with respect to a reference electrode 30, i.e., the contact potential difference VCPD respectively. Sensors of these types are described, respectively, in G. W. Reedyk and M. M. Perlman: Journal of the Electrochemical Society, Vol. 115, p. 49 (1968); and in R. E. Vosteen: Conference Records, 1974 IEEE-IAS 9th Annual Meeting, p. 799, the entire contents of which are incorporated herein by reference. An example of a commercially available device is the Isoprobe model 162 by Monroe Electronics, Lyndonville, N.Y. 14098. Typically, electrode 30 is separated from the top surface of the dielectric film by an air gap of about fraction of about a millimeter. The oxide surface potential, V, measured with respect to a vibrating reference Kelvin or Monroe electrode is often referred to as contact potential difference. The change of V caused by a dose of corona charge on the wafer's surface is equal to the change in the voltage drop across the dielectric layer (ΔVOX) plus the change in the semiconductor surface barrier (ΔVSB);
The dielectric surface potential, V, decays with time, t, after charging, i.e., V=V(t), due to a neutralization of charge by leakage current, J(t), flowing across the dielectric.
Test system 10 includes light sources 23, 25, preferably green or blue light emitting diodes, to illuminate testing site 15 a during charging (light source 23) and during measuring (light source 25) thereby reducing the value of VSB by collapsing the surface depletion region in the semiconductor. Illuminating the dielectric surface is especially necessary in the case of positive charging of an oxide, e.g., SiO2, on the most frequently used substrate in IC-fabrication, i.e., p-type silicon. This specific case, i.e., a SiO2 film on p-type Si substrate, is used as an example to illustrate the method. For p-type (n-type) silicon substrates, positive (negative) corona charge creates a very large depletion layer surface barrier, VSB, ranging from 10 to 200 volts, which in dark would decay slowly after terminating corona charging. Illuminating test site 15 a efficiently generates excess minority carriers (electrons in the p-type Si and holes in n-type Si) in a silicon depletion layer beneath the Si/SiO2 interface rapidly collapsing the depletion layer and removing the contribution to V. Without illumination, the potential drop across the silicon depletion region would dominate the non-contact potential measurements and thereby prevent reliable measurement of the oxide thickness. For silicon, light having a wavelength less than 1 μm produces electron-hole pairs which can suppress VSB. Typically, green or blue diodes are used that emit light at a wavelength of about 500 nm to 350 nm. Shorter wavelengths of light are not desired since they can change trap occupation in the dielectric layer.
In operation, computer 12 sends a signal to move chuck 18 into position below charging station 14. Computer 12 presets these charging conditions, such as ionic current and charging duration, (i.e., the fluence value determined by a charging current multiplied by the charge time) and sends signals to activate the charging station's light source 23 and to activate the corona discharge source 16. After depositing the charge onto testing site 15 a of dielectric surface 15, computer 12 sends signals to turn the discharge source off, to turn on the charge measuring station's light source, to turn off the discharge station's light source, and to move the charge measuring station, via the solenoid, to position the contact potential sensor above the charged surface of the wafer, i.e., above testing site 15 a. This set of operations is done fast enough, e.g., typically about 50 milliseconds, to reduce the amount of charge neutralized prior to starting the measurement.
Once measuring station 19 is above charged testing site 15 a, the computer acquires the measured data of the surface potential, V, vs. time, t, as shown in FIG. 2. The typical time period of acquiring the data is about 3 seconds. Based on the measured voltage decay, the computer calculates the time derivative of V as dV/dt, determines an initial surface potential, V0, by extrapolating the measured voltage back to the initial time, t=0, at which the corona charging was terminated, and the initial rate of decay, R=dV/dt|t=0. The computer can derive these values by fitting the measured voltage decay to a polynomial expression or other appropriate mathematical model. Typically, the computer begins measuring the surface potential decay after terminating corona charging and then monitors and samples the voltage decay at a rate sufficient to facilitate an accurate determination of the initial surface potential value V0, the initial decay rate R=dV/dt|t=0, and the oxide thickness. For example, the computer can being monitoring the decay less than about 200 milliseconds after terminating corona charging and continue monitoring the surface potential at a sampling rate of about 10 voltage measurements per seconds or more so that the computer can accurately determine the initial surface potential value V0, the initial decay rate R=dV/dt|t=0, and the oxide thickness in about 3 seconds, after terminating the corona charging or in less than the total time of 7 seconds after initiating corona charging of the dielectric surface.
After calculating the initial surface potential, the computer can determine an equivalent oxide thickness, (EOT), by using the relationship:
where the coefficients a and b are empirical parameters determined from calibrating measurements obtained from a calibrating procedure. The calibrating procedure includes measuring the surface potential and determining V0 for several different thicknesses of SiO2 layers on silicon (e.g., p-type with known doping concentration). Each of the calibrating measurements are conducted with the same predetermined corona flux that achieves the steady state condition without generating corona stress and dielectric traps. In general, the corona flux is predetermined by depositing a corona flux sufficient to cause the steady state condition but small enough not to generate corona stress and dielectric traps. The latter can be ascertained by monitoring the stress-induced leakage current (SILC). Methods for measuring SILC are described for example in U.S. patent application Ser. No. 09/451,652 by Lagowski et al. A predetermined corona charge between about 1 μA/cm2 to 2 μA/cm2 produces a steady state condition in dielectric layers having thicknesses of about 40 Å or less without generating SILC or traps in under 5 seconds. For calibration, each thickness of the SiO2 layers must be known (e.g. from high precision optical measurements performed immediately after oxidation to avoid thickness error associated with adsorbed water or organic contaminants). The calibrating corona charging and V0 measurements, typically, are performed on the same surface location used to record the optical thickness measurement.
Referring to FIG. 3, the coefficients a and b are determined from the plot of V0 vs. T using a linear regression. For positive corona charging of ultra-thin dielectric layers, e.g., less than about 40 Å, V0 increases with oxide thickness with a rate of about 0.0878 volt per angstrom (or 87.8 mV per Å) for p-type silicon. Typically, Test system 10 can measure the surface potential with a precision of 1 mV and thereby determine the dielectric thickness with a precision of 0.01 Å. The coefficient b is in this case negative and equals −0.5472 volts (or −547 mV). This value of b is representative if the reference electrode used for the potential measurements is made of platinum. This coefficient can be scaled for different electrodes, e.g., different electrode materials, by considering different electrode work functions. It can also be scaled to account for different wafer doping concentrations between the calibrated wafers and the measured wafers. For instance, b can be rescaled by adding the value Δb [mvolt]=−26 ln(NA2/NA1) where NA1 and NA2 are the dopant concentration in the calibration wafer and the measured wafer respectively. The coefficient b also includes a correction for the semiconductor space charge contribution to the surface voltage, ΔVSB. For example, in p-type substrates, ΔVSB is related to the inversion space charge layer, or the accumulation layer for positive and negative corona charge, respectively. Although illuminating the wafer, as described above, eliminates contributions from the depleted surface space charge layer, illuminating the wafer does not completely eliminate the inversion or accumulation space charge layer. Test system 10 can also be used to derive an EOT for dielectric layers thicker than about 40 Å. Test system 10 follows the same protocol used in determining EOT's for the ultra-thin dielectric layers, except that the computer uses different values of coefficients a and b.
Referring to FIG. 4, the coefficient a=0.074 volt per angstrom (or about 74 mV per Å), and coefficient b=−0.55, can be determined by from a linear regression of calibrating data, i.e., known oxide thicknesses greater than 40 Å and measured V0 of the known oxide thicknesses.
Referring to FIG. 5, a plot illustrates the "self adjustment" of V0, i.e., the robustness of the above described methodology to deviations in the corona ionic current. The robustness results from the steady state condition and the strong dependence of the tunneling leakage current, JLEAK, on the electric field, F. The voltage drop across a dielectric layer is related to the electric field by V=T�F, where T is the thickness of the dielectric layer. Under a steady state condition JLEAK equals the corona ionic current, JC, such that for every value of JC that produces a steady state condition, the initial surface potential, V0, assumes a value equal to T�F in which F is dictated by the tunneling current characteristics shown in the plot. Different values of JC result in different values of V0. For instance, tunneling current characteristics 210 and 220 correspond to a semiconducting wafer including a SiO2 layer having a thickness of 27 Å and 15 Å respectively. Focusing on characteristic 210, a typical corona ionic current of about 1 μA/cm2 corresponds to a field, F, of about 7.25 MV/cm. A change in the corona ionic current of about �30%, which still produces a steady state condition, results in a change of field, F, of about �0.05 MV/cm and a relative change in V0 of only about �0.7%. Similarly, characteristic 220 reveals that a change in the corona ionic current of about �30%, at a corona ionic current of about 1 μA/cm2, only results in a change of V0 of only about �2.5%. Changes in V0 due to changes in corona ionic current are significantly smaller than the deviation of current. The steady state condition facilitates dielectric thickness measurements that are robust and tolerant of significant changes in corona ionic current either between different test systems or repeat measurements of wafers on the same test system due to changes in ambient conditions such as humidity and temperature. The steady state condition also facilitates self-adjustments of the oxide surface charge, QC, and the surface barrier, VSB. As a result, the steady state condition methodology facilitates excellent quantative matching of thickness measurements performed on different semiconductor monitoring tools, e.g., the testing systems described above.
In certain embodiments for achieving extremely accurate measurements, the test system 10 employs a method of measuring the surface potential at a delayed time after terminating corona charging. This method further reduces errors in determining the dielectric layer thickness due to deviations of the initial surface potential, V0, caused by different corona ionic currents. Referring to FIG. 6, a surface potential curve 310 results from applying corona flux 1 and a surface potential curve 320 results from applying corona flux 2 to the dielectric. The difference between corona flux 1 and 2 results in different initial surface potential values. As described above with respect to FIG. 5, at 1 μA/cm2, a deviation of 30% in the corona ionic current causes a deviation, ΔV0, of about �2.5% in a 15 Å thick dielectric layer and about �0.7% in a 27 Å thick dielectric layer of SiO2. The errors in Vo cause equivalent errors in the calculated dielectric layer thickness, T (see equation 2). Test system 10 reduces the errors in T by determining the surface potential from the voltage decay at a time, Δt, after t=0, i.e., the surface potential, VD, at the delayed time. After the steady state condition is reached, the potential decay obeys a logarithmic time dependence given by
where t0 depends on the value of the corona ionic current. As the corona charging increases the value of t0 decreases and vice versa. For a 27 Å thick dielectric layer of SiO2, t0 is about 0.05 seconds when the corona ionic current is about 1 μA/cm2, but increases to about 0.5 seconds when the corona ionic current decreases by a factor of ten to 0.1 μA/cm2. After t0, the surface potential decay curves resulting from different corona ionic currents merge such that differences between the delayed measured surface potentials, ΔVD, have decreased relative to the differences between the initial measured surface potentials, ΔV0. In general, the surface potential, VD, is determined using a delay time t larger than t0. For example, VD can be determined at a time delay of about 1.2 seconds for a corona current of 2 μA/cm2. If necessary, the relationship
ΔV D αΔV 0(t 0/(t+t 0)) (4)
can be used to determine the length of a time delay needed to reduce errors in V0 by a specific amount. For instance, when t0 is 0.05 seconds, a delay time, t, of 1 second will reduce errors caused by deviations in corona ionic current by about a factor of 20, i.e., ΔVDα0.05 ΔV0. Test systems that determine the surface potential after a time delay are particularly useful in negating instabilities of the corona ionic current magnitude, typically found in negative corona discharges. As shown in FIG. 7, for negative corona charging, VD scales linearly with T via the relationship given by equation 2. Coefficients a and b are determined by fitting calibrating data, VD and known T, to a linear regression. Of course, these coefficients are different than those determined for calibrating data from positive corona charging. VD calibrating data are recorded for each known thickness at the same corona ionic current and time delay. VD also scales linearly with a positive corona charging. Advantageously, when using negative corona charging, as opposed to positive corona charging, the coefficient "a" is large, i.e., larger for negative charging than for positive charging. Large values for "a" provide a larger sensitivity in measuring the dielectric thickness.
Referring to FIG. 8, a method using two delayed time measurements of the surface potential is illustrated. In this approach VD1 is measured after time interval Δt1 and VD2 is measured after time interval Δt2, in which both times are delayed relative to terminating corona charging. The thickness of a dielectric layer, T, can be determined from the expression
where c1 and d1 are the parameters determined from calibrating measurements. The calibrating measurements are recorded as discussed above with respect to single measurements of the surface voltage, i.e., same corona charging, except that the voltage decay is sampled at the same two time delays for several semiconductor wafers having known dielectric thicknesses. The doping correction to the surface voltage is constant over the voltage decay. As a result, measuring the relative voltage change at two specific delay times within the decay and taking their difference eliminates the need to correct the parameter d1 to account for differences in doping levels between the semiconductor wafers used in the calibrating measurements and those being tested. The dual decay measurements also provides a parameter d1 that is insensitive to changes in the work function of the reference electrodes used in potential measurements.
In alternative embodiments, test system 10 can determine dielectric layer thicknesses from capacitance measurements by using the initial rate of the voltage decay, R=dV0/dt, after ceasing the corona charging. Assuming test system 10 reaches the steady state condition, at the moment of ceasing corona charging JLEAK=JC and JLEAK equals
COX is the capacitance and is equal to ∈O ∈OX/T where ∈0 is the permittivity of free space and ∈OX is the dielectric constant of dielectric layer. The value of COX is determined from initial value of the voltage decay rate, R=dV/dt|t=0, according to the expression
where JC is the known corona flux, R=dVSB/dt is measured, and RSBO is the rate of the surface barrier decay that constitutes a small correction to R of about 5% or less. For high precision measurements RSBO can be calculated from surface electrostatic equations that take into account Quantum corrections and Fermi Dirac Statistics. Such calculations can be done using treatment developed for MOS capacitors in strong inversion or accumulation as described by C. Raynaud et.al in Mat. Res. Soc. Symp. Proc. Vol 592, p. 159 (2000). In some embodiments, such as in performing preliminary or low level manufacturing controls, RSBO can be neglected such that COX=JC/R. In general, neglecting RSBO may be justified when the electric field is high in both the dielectric layer and in the semiconductor. In low electric field measurements of T, the contribution from the surface barrier changes, dVSB, usually cannot be neglected since doing so can cause COX to be underdetermined by about 30% to 50% for SiO2 dielectrics having thicknesses at or below about 40 Å.
In some instances of high humidity or high surface ionic contamination, a dissipation of charge deposited on a dielectric, may be enhanced by the surface leakage. The magnitude of this process can be reduced by reducing the magnitude of the lateral surface charge gradient between the measurement site and the area surrounding the measurement site. Reducing the lateral surface charge gradient can be accomplished by predepositing corona charge of the same polarity as the one used in the thickness measurements, described above, and on an area larger than the measurement site. Corona charge can be predeposited over an area including or surrounding the measurement site. For example, corona precharging can be deposited over the whole dielectric surface with a uniform blanket of corona charge. A suitable device for a whole wafer corona charging is described in U.S. Pat. No. 6,037,797 by Lagowski et al. A device of this type can be readily incorporated into the apparatus for measuring the dielectric thickness. The amount of corona precharging depends on the amount of corona charging necessary to produce a steady state condition in the measurement site, i.e., measurement charging. If the measurement charging is large, a small precharge may not reduce the lateral surface charge gradient. In general, the amount of corona precharging is of sufficient magnitude relative to the measurement charging necessary for establishing the steady state condition so that corona charge in the measurement site does not dissipate, laterally, into surrounding areas when the testing system is measuring the voltage decay. Several combinations of corona precharging and measurement charging can be employed. For example, the precharging and measurement charging can be equal or one charging can be greater than the other. A number of embodiments of the invention have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the invention. Accordingly, other embodiments are within the scope of the following claims.
Patent Citations
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Hey, Ladies!
It's officially 2011. I am praying for sticky beans for those of us TTC.
Hey, Ladies!
It's officially 2011. I am praying for sticky beans for those of us TTC.
Kenny ? Brandi = Lillian�+ ^J^ (11/10)
Wow 2011...I'm still in shock that the time is going by so quickly!
I have my first acupuncture appt today and I'm pretty excited. I know I should guard myself better against this sort of hype, but I can't help but feel the tingle of hope in my little tummy. When I called to make the appt, I first had to inquire as to whether she practiced fertility acupuncture and the receptionsist was very enthusiastic. She said (and I quote) " Oh yes. Dr. A usually sees a patient three times a week for a month before they get pregnant." Now I know I won't get pg the first month..nothing is that easy for me. But then she continued with "and it can sometimes take a little longer if you can only come twice a week or less" I wanted to jump for joy...and I wanted to slap her across the face at the same time. Does she not realize how hope inspiring she sounds to someone like me? How she could be setting me up (and she totally is setting me up) for complete and utter disappoinement? I wonder if they've ever had a case like mine? I live in a small town and the acupuncturist is in the next big town over (gosh don't I sound like a hick?) and I sometimes feel like no one has ever gone through as much as I have. I know that's crazy...but I feel like I am the exception to the rule.
Anyway...I will let you guys know how the acupuncture goes and keep everyone up to date with any changes I notice. I will admit, I am hugely skeptical...but am open to try if it gets me closer to our bambino.
Have a great day ladies! and sorry for the crazy post!
Happy New Year! I really hope this is the year for you two girls.
Miranda...I bet you'll love acupuncture...I was seeing someone here in Houston, TX who really only deals with fertility issues. Now it didn't get me pregnant, but she was okay with me only seeing her every 7-10 days. I really hope this works for you. Also, check out the book "The Infertility Cure"...very interesting.
Brandi...How are you?
Hope everyone had a great holiday.
AFM...Four weeks from tomorrow is my csection - Feb 1st. I'm scared!!
Mama to 3 girls
2006 / 2011 / 2011
Miranda - How'd your appointment go?!?!? Did s/he do any needles in the back? I'm curious to see because I really believe that is what helped me get preggo a couple cycles ago. I believe that acupuncture really does something. To someone who has experienced it, I am a believer! *Sending sticky dust your way!
Nickie - Woohoo! I am so happy for you. Just try to relax. I know easier said than done. lol You will be great and the babies will do marvelous! Have you had your babyshower yet? Will you post the girls' names on FB? I'd love to hear their names.
AFM - I should be o-ing soon, if I haven't already. I hope to be preggo soon.
Kenny ? Brandi = Lillian�+ ^J^ (11/10)
Ladies the first appointment was good. We talked for a while and she told me that she has a 60-70% success rate with people kind of like me. Those people being generally heathly and with no obvious reasons for infertility. She really pressed the importance of trying to be stress free. I know that's part of my problem...but it's so hard not to stress and obsess! But it is one of my NYR to stop stressing over everything...to be more laid back...basically trying to get back to the person I was at the before all the IUI's, clomid, negative HPT's, arguments and tears. She did a few needles today (two in the abdomen, one in each hand and one in each ankle.) and I'm going back Friday...which should be cd 1. Then the plan of attack is to go three times a week until I ovulate and then once a week till I get a BFP or AF shows.
Glad your first appt. went well, Miranda. KUP on what you think of it.
Brandi...I had a baby shower at work, but that was it. I did get my double stroller and a second high chair, plus a bunch of little things...so I made out pretty good ;-) We're keeping the names a secret from everyone, but I'll tell you girls. Just don't say anything on FB until it's been announced there...or else...lol
Baby A will be Elsa Claire
Baby B will be Lilah Renee...I'm not sure I love Renee, but can't find a name I love with Lilah - so unless I find something else in the next four weeks, that will be her name. I'm willing to listen to suggestions if either of you have them...
Mama to 3 girls
2006 / 2011 / 2011
Nickie I love the names! But if you want to entertain ideas for Lilah's middle name...have you thought of Lilah Rose or Lilah Grace. Very feminine in my opinion. I can't believe your only 4 weeks out! It seems like it has really flown by...
Brandi - Thanks for the sticky dust! I didn't realize that you were doing acu when you conceived. She seemed totally confident that it would happen...I hope she's right. My mom was especially excited that I was getting pro-active in my fertility mess again. Of course...she wants a baby just as bad as I do...maybe more!
Miranda - I was with my mom today and she has baby fever really bad too. I didn't realize how ready she is for another grandBABY. The last baby is 4 years old. Yep, I was doing acupuncture. She was working on my back more than my front. She did do the one between my big toe and second toe, the one on the ankle and there's one below the knee that she did. She also did the one in the web of my hands. I miss it and cannot wait to get back to seeing her... I'm glad that your appointment went well. Did she do the point between your eyes? If not, I highly recommend it. I forget what it's called, but she'll know. It releases stress and quiets the mind.
Nickie - I LOVE both names and like the suggestions that Miranda provided. Mum's the word! Please keep us posted on your progress as you get closer. I think the stroller will be invaluable with the girls. What kind of stroller is it?
AFM - I think I am o-ing soon, so we have been BD-ing EOD pretty much. I am trying not to stress, but I want to know ASAP so I can start progesterone right away or at least get in for b/w.
Kenny ? Brandi = Lillian�+ ^J^ (11/10)
Brandi - good luck catching that egg. I'm praying for you. The stroller is just a Graco double stroller...nothing fancy. I got carseats from a friend of mine who had twins 3 years ago...they don't expire until 2012...and they will work with the stroller...so I saved some money there ;-)
Miranda...Thanks for the name suggestions. They are both beautiful names and I think we considered them both at one time...I'd lean towards Grace first. I think I may tell my husband I'm not lovin' Renee and start the name arguments again. His mom's name is Mayola and I thought about Lilah Mae...after his mom...but is that too Southern/hill billy? IDK.
Mama to 3 girls
2006 / 2011 / 2011
Nickie - That's smart and savy to get carseats from a friend. Good for you! Lilah was on our list of girl names and we considered Mae as a middle name. We liked it. You will find a good fit, and honestly, it doesn't matter what other people think. You and DH will find a middle name you both like.
Nedra - How is your pregnancy? I'm not sure if you still come on here, but we'd love to hear how you are doing.
Tracy - Did AF ever show?!?!?! How are you? I love your posts, especially since we only live a few hours away from each other.
Kenny ? Brandi = Lillian�+ ^J^ (11/10)
Brandi - She didn't do the needle between the eyes...but the first visit was very basic since I'm so close to AF. She said I will be her little pincushion the week before O...lol...so I anticipate a lot of needles then! But I definitley want to try the forhead one if it relieves stress! Perfect!! I did a lot of reading on it and it says that there are points on your back, arms and legs(feet maybe) that stimulate egg production and thinckening of the lining. I definitley need those!
Nickie - I like Lilah Mae. It's sweet! But I agree with Brandi...you guys will find the perfect name and it will fit her to a T.

subset: commoncrawl


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The Global FlyFisher - The Largest and Best Place to go for Online Fly Fishing and Fly Tying
The ide are often found in the brackish water along the Danish shoreline. They are spooky fish, not easy too hook and not really great fighters. But good fun to fish for anyway.


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STAGE TUBE: Highlights From MTV's 2012 MOVIE AWARDS
Winners of the 2012 MTV Movie Awards were announced last night with THE HUNGER GAMES and BREAKING DAWN taking home top prizes. Check out highlights from the show below!
Among the highlights of the evening was a moving tribute to the late Heath Ledger by actor Christian Bale and a rocking performance by Johnny Depp and The Black Keys. The Dark Knight Rises director Christopher Nolan gave a sneak peek at the highly anticipated film.
Winners of the 2012 MTV MOVIE AWARDS are as follows:
Movie of the Year: The Twilight Saga: Breaking Dawn Part 1
Best Female Performance: Jennifer Lawrence, The Hunger Games
Best Male Performance: Josh Hutcherson, The Hunger Games
Breakthrough Performance: Shailene Woodley, The Descendants
Best Comedic Performance: Melissa McCarthy, Bridesmaids
Best Cast: Daniel Radcliffe, Emma Watson, Rupert Grint, Tom Felton and the entire cast of Harry Potter and the Deathly Hallows: Part 2
Best On-Screen Transformation: Elizabeth Banks, The Hunger Games
Best Fight: Jennifer Lawrence and Josh Hutcherson vs. Alexander Ludwig, The Hunger Games
Best Kiss: Robert Pattinson and Kristen Stewart, The Twilight Saga: Breaking Dawn Part 1
Best Gut-Wrenching Performance: Kristen Wiig, Maya Rudolph, Rose Byrne, Melissa McCarthy, Wendi McLendon-Coven and Ellie Kemper, Bridesmaids
Best On-Screen Dirtbag: Jennifer Aniston, Horrible Bosses
Best Music: "Party Rock Anthem," LMFAO, 21 Jump Street
About Author
- Mark Wahlberg Partners With Indian Motorcycle on Limited Edition Apparel Line
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- VIDEO: Joan Rivers Snubbed? Watch OSCARS' In Memoriam Tribute
- Kirk Cameron, Kelsey Grammer, ANNIE and More Top 2015 RAZZIE AWARDS; Full List!
- LA Kings & San Jose Sharks Face-Off in First Outdoor NHL Game, Live in Theaters Today
- VIDEO: New Trailer for HBO Scientology Doc 'GOING CLEAR'
- Actor Joe Mantegna Becomes Saint Pio Foundation Goodwill Ambassador
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- Rebecca Wang Supports 68th BAFTA Film Awards Ceremony
- Gay Men's Health Crisis to Honor THE NORMAL HEART's Larry Kramer with Lifetime Achievement Award


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|posted 1 year, 5 months ago
"Onward, to the defeat of the invader Dr Wiley and the downfall of humanity for the society of robots!"?
|posted 1 year, 5 months ago
|1 reply
"Forward, toward the destruction of the usurper Doctor Wily and the destruction of of all humans for robot kind".
Must be logged in to post
Our Kickstarter is in the final stretch now. We've not yet met our funding goal so we could really use the help! Stay tuned and we might give out some Beta keys, and we're definitely going to have a free beta weekend coming up. Or if you're in the media, totally bug me and I'll give you that key RIGHT NOW.
War of omens Check it out! This is the first game I've ever worked on that I've also played for fun. Took me 10 years in the industry.


text:
A Father's Last Request
John Calvin offers comments about the patriarchs, saying that "not even death itself could extinguish the power of their faith." All of us must look beyond the end of our own lives and trust God to keep all of His ...Read More
A Knife Is Drawn
We do not need a major tragedy to make us feel as if we are clinging to God's promises by our fingernails. Sometimes our daily problems can build to the point where we hardly feel like keeping the promises ...Read More
A Gift From God
Our experience also demonstrates the reality of the grace of faith. Imagine two people with the same background hear the Gospel. Yet only one of them believes, thus showing that it is not merely our surrounding environment that leads us ...Read More
Examples of Faith, Part II
Around the world, many worship in fear of the government killing them for their faith. If that is your situation, continue holding fast to God's promises. In other places, standing for Jesus may mean befriending the social pariah, disciplining ...Read More
Examples of Faith, Part I
Faith entails believing God will fulfill His promises despite the world's opinion. The world tells us to store up treasures for ourselves, but Jesus says we must hold our blessings loosely so we can share them with others (Matt ...Read More
Faith and Evidence
Christian faith is manifest in the lives of those who seek to please the Lord. Only those who by their words and deeds show love to the one, true God and their neighbor can rightly expect a place in the ...Read More
A Hopeful Vision
The Christian life is a pilgrimage of faith. Hebrews 11:2 tells us that by faith "the people of old received their commendation." Is your faith worthy of commendation? Do you trust the Lord in all your circumstances? To strengthen ...Read More
Faith Is Counted
Again and again the New Testament warns us that our works cannot add anything to our justification. Neither can sin take away the right status of all those truly justified, though it may disrupt our fellowship with God (Eph. 4 ...Read More
Captivity Promised
Being a servant in the kingdom of God does not carry with it a life of ease. In His wisdom, the Lord has seen fit to exact His reign through weak disciples in whom His power is made perfect (2 ...Read More
Faith and Reason
When the Sadducees confronted Jesus with the doctrine of the resurrection (Matt. 22:23–33), our Lord answered them with an inductive argument (looking at the biblical text and drawing a logical conclusion based on the evidence). Logic is essential ...Read More
Contend for the Faith
Take some time today to read through the epistle of Jude once more and at least one of the other General Epistles we have studied this past year. Ask the Lord to help you recall His apostles' teaching as you ...Read More
Overcoming the World
Do you believe Jesus is the divine Word of God who became incarnate for the sake of our salvation? Do you believe He is truly God and truly man? If so, this verse promises you will overcome the world. Are ...Read More
Blessed Assurance
Take some time today to read through 1 John in preparation for our upcoming study. As we study this epistle we will be concerned with false teaching, much as we were during our study of 2 Peter, but we will ...Read More
Supplement Your Faith
The order of the virtues listed in today's passage emphasizes faith and love. Faith is listed first because without true faith we cannot be holy, and love is listed last because it is both our final goal and the ...Read More
Be Watchful
Calvin and other commentators agree that Ephesians 6:10–20, and the armor of God described therein, provides a guide for how we might stand firm and resist Satan's devices. Persevering faith, prayer, and the Word of God can ...Read More


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*sorry for the novel*
I'm care leasing a friends mare and getting her back into shape. She's a 9-10 year old 14.3 hh Quarter horse/Paso fino. We're working on her english form and she's very responsive, great under saddle but an absolute bitch on the ground. On the lunge line she respects space, responds to voice commands, but just walking around on a leadline she's very high strung and pushy. She gets that way when she's had too much time off so she's under a strict manners make over right now. Lots of backing, waiting, standing, turning circles. She's starting to remember some of her manners. I let her out in the front pasture by herself earlier and snapped some pictures of her I thought I'd share. I've been her handler for schooling shows and training for the past 5 years along with the other horses I've worked with. The friend is a family friend who's pasture was sold out from underneath her (long story). She has room for one horse at her house down the street so I offered to take Mocha, the one I'm familiar with until she can find a self care facility she likes.
Anyway here's the pictures. My equipment is a bit dirty so the pictures aren't great great but I like them, I'll be taking my lenses and cameras in this week for a good cleaning.


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So much dirt, so little time!!
I don't know who came up with that, but I do know that it sounds really cool...so I know it could not'ave been me!
Now ... I wish I could have lived my life by those words, but as with most of us, life has a way of getting in between us, and the fun we are supposed to be having.:dunno
So mostly I've been growing old the last few years. Sad hey!!:cry
Anyhowz....before this starts to sound like a Dear Abby.... some background ....
This is us: Snr and Jnr.
We are called that because we have the same name. I'm called Snr because I'm older. I don't like that much, but my wife says that is how it works, and I should just "suck it up". :bluduh
A while ago we sold our dirt bikes, and in this last week we replaced them with street legal alternatives :clap ........ figuring that now we could start exploring the backroads on weekends, without having to trailer bikes all over.
Yamaha TTR250 for Jnr, because he is light, and the 650X for me, because I'm not.
And so begins a new adventure. Hope to inject some play back into life & at the same time show you some of the nice places around our valley.
I'm Snr :gerg, he is Jnr :rayof, and this is Jackass ....
OK, so early this morning we set off on our first road/dirt ride together.
How much more fun it is to just get on your bike and drive to the gas station. I could even nod at the cop without looking for the best get away route at the same time!! I can like this...:thumb
The plan was to go on a short ride so Jnr could familiarize himself with the TTR. We headed to the train tracks and used the service road to wind through the local farms. The route would take us to Swinburne from where we would head north easterly to circle town. Around 80km and a 2 hour ride.
Riding along the tracks.
Even though we started the ride with sunshine, the clouds quickly started to roll in. It was clear that if we should do the full loop that we might end riding in the rain. Not a problem for me, as I actually love wet dirt, but I was not that sure Jnr would find it as much fun.
It was easy going. The service roads are all used by locals so were in reasonable condition. That was until we got to this bridge. Nothing much, but for the fact that the gate to route you around it was locked. Again not a problem, we'll just ride over the bridge....
But this is where the day went kinda pear shaped. The steel floor was rusted out, and as I was riding over the sleepers, I found that the space between them was exactly the size of the an X Challenge's rear wheel. It was also at this time that I found that the X Challenge is not exactly in the same weight division as our old motocrossers!! This thing is a PIG if you are tired, thirsty, and have to manhandle it over a flowing river with just rusted steel between you and the water.
Yes, my name is Snr :gerg, and I am Jackass...
Much blood and sweat later we were on the other side!!:clap
Not sure why this stupid bridge looks so small in the pictures. Dragging that stupid X over it it felt like it was miles long!!
From here on it was smooth sailing again...some places had standing water from the recent rain...
....but we could just cruise along enjoying the scenery...
How is that for taking you back to the past, 1990 to be precise. AXO jersey in dayglo green. I had the matching Dayglo pink/green/yella Alpinestars boots and way funky pants too...but thankfully they did not survive.
We got to the turn off and Jnr said he had no desire to gamble riding in the rain, so we slabbed it back home....did I mention how much fun it is to have a road legal scoot...:thumb
Not many pictures, and not that big a ride, but an important one, as today another adventure rider was born!!
Till next time.
I'm Snr :gerg, he is Jnr :rayof, and this is Jackass ....
Very cool.
One from the Gopro
Some pics from a quick trip we made yesterday into Lesotho. It was probably the last road trip for now as the weatherman predicts wet and cold weather from the end of the week to lead us into winter....:cry
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The .exe extension on a filename indicates an executable file. Executable files may, in some cases, harm your computer. Therefore, please read below to decide for yourself whether the dfsvc.exe on your computer is a Trojan that you should remove, or whether it is a file belonging to the Windows operating system or to a trusted application.
The process known as dfsvc.exe belongs to software Microsoft .NET Framework (version 4 Client Profile, 4 Client) by Microsoft (www.microsoft.com).
Description: Dfsvc.exe is not essential for the Windows OS and causes relatively few problems. Dfsvc.exe is located in a subfolder of C:\Windows.
Known file sizes on Windows 8/7/XP are 5,120 bytes (83% of all occurrences), 4,608 bytes or 11,592 bytes.
The program is not visible. Dfsvc.exe is not a Windows system file. Dfsvc.exe is located in the Windows folder, but it is not a Windows core file. dfsvc.exe appears to be a compressed file. Therefore the technical security rating is 48% dangerous, however you should also read the user reviews.
If you experience any issues with installation of dfsvc.exe, you may want to look for help from the software company Microsoft, make sure that you have installed the latest version or uninstall the program using the Control Panel ⇒ Add/Remove programs ⇒ Microsoft .NET Framework or Microsoft .NET Framework 4 Client Profile.
Recommended: Identify dfsvc.exe related errors
External information from Paul Collins:
Important: Some malware camouflages itself as dfsvc.exe, particularly when located in the C:\Windows or C:\Windows\System32 folder. Therefore, you should check the dfsvc.exe process on your PC to see if it is a threat. We recommend Security Task Manager for verifying your computer's security. This was one of the Top Download Picks of The Washington Post and PC World.
Summary: Average user rating of dfsvc.exe: based on 15 votes with 11 user comments. 4 users think dfsvc.exe is essential for Windows or an installed application. 5 users think it's probably harmless. 5 users think it's neither essential nor dangerous. One user suspects danger. 2 users don't grade dfsvc.exe ("not sure about it").
A clean and tidy computer is the key requirement for avoiding problems with dfsvc. This means running a scan for malware, cleaning your hard drive using cleanmgr and sfc /scannow, uninstalling programs that you no longer need, checking for Autostart programs (using msconfig) and enabling Windows' Automatic Update. Always remember to perform periodic backups, or at least to set restore points.
Should you experience an actual problem, try to recall the last thing you did, or the last thing you installed before the problem appeared for the first time. Use the resmon command to identify the processes that are causing your problem. Even for serious problems, rather than reinstalling Windows, you are better off doing a repair of your installation, or in the case of Windows 8, executing the DISM.exe /Online /Cleanup-image /Restorehealth command. This allows you to repair the operating system without losing data.
To help you analyze the dfsvc.exe process on your computer, the following programs have proven to be helpful: Security Task Manager displays all running Windows tasks, including embedded hidden processes, such as keyboard and browser monitoring or Autostart entries. A unique security risk rating indicates the likelihood of the process being potential spyware, malware or a Trojan. Malwarebytes Anti-Malware detects and removes sleeping spyware, adware, Trojans, keyloggers, malware and trackers from your hard drive.
tlntsvr.exe adsmsrv.exe imjpapi.dll dfsvc.exe icon09db8a851.exe regedit.exe lexbar.dll comcastantispyservice.exe tbpanel.exe loggingserver.exe jsloader.dll [all]


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11th Street
St. Paul To Begin Tackling 11 Of The 'Terrible 20' Roads
St. Paul officials are laying out their plan to fix about half of the city's "Terrible 20″ roads. Eleven roads will undergo maintenance beginning the week of Sept. 8, and the work is expected to run until mid-October.
Metro Transit Bus Barrels Out Of Control In DT Mpls., Driver Dies
A Metro Transit bus went out of control Friday morning, driving up on the sidewalk of a downtown Minneapolis block and causing major damage. The accident happened at about 10:10 a.m. between 10th Street and 11th Street on the Nicollet Mall.


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In my free time I watch Anime, Play games (Swat 4 with my clan www.crack-babies.tk), Sporting, listening to Japanese Music and anime openings and to trance/nightcore music, and learning japanese language.
No blog entries have been posted here. Boring yes, but as confucius says - if you have nothing good to say, why say anything at all? Check back later, perhaps something exciting will pop-up and be worth blogging about, like season 3 of the teletubbies.
Speak your mind, rant about games, mods and the development scene, it's simple and who knows maybe someone will read it and agree. It will feel right!


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JavaScript Node server-side variable parser
jsn is an open-source Node to JavaScript variable parser.
jsn will take variables you pass as a context, and parse the source code to produce valid JavaScript.
Sample .jsn file:
var thatMuch = '@how.awesome';alertthatMuch;
You will need to install jsn, you can do that directly from npm
npm install jsn
In your Node.JS code, you can parse these variables by accessing the jsn compiler.
var jsn = require'jsn'; jsnparsesource how: awesome: 'well, very much, tee-hee!' iferr throw err; console.logjs; // valid js. ;
This is particularly useful when you have small pieces of data you want to pass to your JavaScript files. It's often most useful when paired with node-assetify, which supports jsn out the box.
To keep things simple, JSN supports only context variable names with [A-z], -, or _ characters.


text:
- Summer, long weekends and holidays: free 3 days ago.
- Date on closures, Easter week, Christmas and New Year: free 7 days before.
- Rest of the year: free 1 day before.
Weddings, honeymoon, anniversaries, as you always dreamed in Cancun, a great place to reaffirm your love with a romantic moment in an unforgettable location.
Events, meetings and conventions in Cancún in our facilities for adults that were designed to please even the most intense meetings, providing ample flexibility for all schedule and space needs.
Our SPA in Crown Paradise Club Cancun has facilities designed for you to achieve your highest state of relaxation. We take care of every detail for you to live an unforgettable experience ...
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27 year old man | Elk River, MN, USA | Seeking women 20-32 within 100 miles
Active within 24 hours
I am a very laid back person. I am also shy,...
I am a very laid back person. I am also shy, but once you get to know me, I am an interesting person. Loyalty and commitment are two qualities that I possess. I am a spiritual person and I believe in God. The thing I take most pride in is my family. I am close with both of my siblings. I have two older sisters, leaving me to be the youngest child, which has its positives. I also have a niece and a nephew, which makes me a very proud uncle. I am very much into being outdoors. I like to take my dog for a walk. Walking is a good way to get in touch with nature. It is nice to be outside when the sky is clear. I love seeing all the stars. There is nothing like a Texas sky because it is unlike any other sky I have seen. The view of the Cascade mountain range, Mt. Rainier in particular, and the Olympic mountain range in Washington are awesome sights. The view from the observation deck from the Space Needle in Seattle is cool as well. I am originally from Seattle, WA, but currently living in Elk River, Mn. I have also lived in Arizona and Texas. Living in different parts of the country has helped me keep an open mind. It is an eye-opener to see what life is like in other parts of the country. As far as where I would like to travel, I would like to visit countries such as Germany and Norway because of my ancestry. Australia would be another country that I would like to visit as well. The kind of woman that I am looking for first and foremost, is one that has a great personality. Intelligence is another trait which is beautiful. Intelligent conversations are very stimulating. A sense of humor is key because it helps lighten the mood. If you like a man with a Southern twang or drawl, then I can be your country man.
Dining out , Hobbies and crafts , Music and concerts , Nightclubs/Dancing , Playing sports , Watching sports
Baseball, Basketball, Football, Golf, Walking / Hiking, Weights / Machines
I exercise 5 or more times per week.
I have Dogs
I like Horses
I have a dog that is half pug and half dachshund.
Middle of the Road
I have lived in a few different places, but one I would like to visit again is Seattle. I also like to go to Fort Worth Stockyards.
Country music is my favorite music to listen to by far. I enjoy listening to George Strait, which I grew up on, to newer acts like Jason Aldean and Eli Young Band. I enjoy listening to Texas Country and Red Dirt music as well.
I like to relax at home. Going out dancing is something that I enjoy. Listening to music is also something that I like to do very much.
I don't read a whole lot of hardbound or paperback books, but I do more reading on the computer than anything else.
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What he is looking for
|6'0" (182cms)
|4'8" (142cms) to 5'8" (172cms)
|Body type:
|Athletic and toned
|Slender, About average, Curvy, Athletic and toned
|Blue, Brown, Green, Hazel
|Light brown
|Auburn / Red, Black, Light brown, Dark brown, Blonde, Dark blonde
|No Way
|No Way
|Never, Social Drinker
|Labor / Construction
|No preference
|I'll tell you later
|No preference
|Never Married
|Never Married
|Have kids:
|Wants kids:
|I'll tell you later
|No preference
|Native American, White / Caucasian
|Asian, Latino / Hispanic, Native American, White / Caucasian
I am one-quarter Native American (Chippewa), one-quarter Norwegian, one-quarter German, one-eighth Dutch and one-eighth Belgian.
|Christian / Other
|Christian / Catholic, Christian / LDS, Christian / Protestant, Jewish, Spiritual but not religious, Christian / Other
|High school
|No preference


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Data replication is often used to increase the availability of data in a database system. Voting schemes can be used to manage this replicated data. The authors use a simple model to study the capacity of systems using voting schemes for data management. Capacity of a system is defined as the number of operations the system can perform successfully, on an average, per unit time. The capacity of a system using voting is examined and compared with the capacity of a system using a single node. It is shown that the maximum increase in capacity by the use of majority voting is bounded by 1/


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Do you have any museums nearby? It's actually not such a bad idea.
The one near my house (The Minneapolis Institute of Arts) have rails in the ceiling with spotlights. You can move them and direct them in different directions. Being that they are in the ceiling they are out of the way. I like the idea of lighting from above.
Hope that helps!
Wish I had a significant other putting pressure on to hang more of my art on the walls...


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Vaccines, Dewormers, and Nutrition for Senior Horses
Ensure your horse's "healthspan" equals his lifespan by optimizing his immunity, parasite control, and feed programs.
Photo by iStock
A Day Spent at an Equine Clinic Abroad
Take a behind-the-scenes look at the goings-on of a U.K. vet clinic and its differences from ones stateside.
Photo by Erica Larson, News Editor
Does Equine PPID Affect Immune Responses to Vaccination?
Horses with PPID had lessened antibody titers following vaccination for rhinopneumonitis and West Nile virus.
Photo by Kevin Thompson/The Horse
Horse Owners Should Take Precautions Against EEE, WNV
July 01, 2015
Vaccinating, eliminating standing water, and stalling horses can reduce the risk of mosquito-borne disease.... Read More
Phase II of NAHMS Equine 2015 Study Postponed
June 30, 2015
The study is postponed due to a large-scale highly pathogenic avian influenza outbreak requiring officials' attention.... Read More
Horse Owners: There's Still Time to Take Action Against WNV
June 26, 2015
Vaccination and good horse and pest management can help protect horses from WNV during peak mosquito season.... Read More
Vaccines, Dewormers, and Nutrition for Senior Horses
June 26, 2015
Ensure your horse's "healthspan" equals his lifespan by optimizing his immunity, parasite control, and feed programs.... Read More
New South Wales Confirms First Equine Hendra Case of 2015
June 24, 2015
Officials said an unvaccinated 19-year-old gelding died after showing clinical signs of infection for two to three days.... Read More
A Day Spent at an Equine Clinic Abroad
June 23, 2015
Take a behind-the-scenes look at the goings-on of a U.K. vet clinic and its differences from ones stateside.... Read More
West Nile Virus Vaccine in Horses
June 14, 2015
Learn how vaccination can help protect horses from this potentially deadly zoonotic disease.... Read More
Does Equine PPID Affect Immune Responses to Vaccination?
June 14, 2015
Horses with PPID had lessened antibody titers following vaccination for rhinopneumonitis and West Nile virus.... Read More
Designing an Equine Wellness Plan for Your Practice
June 13, 2015
Wellness plans are a win-win-win for clinic, client, and patient. Learn how to implement one in your vet practice.... Read More
Know Your Horse's Health Parameters
June 12, 2015
Be familiar with what's normal for your horse so it's obvious when something's not right.... Read More
Horse Owners: Consult Your Vets Regarding Vaccinations
June 08, 2015
Following floods, Texas animal health officials say mosquito-borne disease incidence could increase.... Read More
Vaccinate Australian Horses Against Hendra Virus Now
June 05, 2015
Veterinarians say vaccination is the most effective way to protect people and their horses from the deadly hendra virus.... Read More
Ensure Horses are Vaccinated Against EEE, WNV, and Rabies
May 26, 2015
Timely vaccination has been shown to decrease disease incidence drastically.... Read More
Protect Yourself and Your Animals From Rabies
May 20, 2015
Vaccination can help reduce horses' risk of developing rabies if bitten by an infected animal.... Read More
Researchers Working to Develop New Strangles Vaccines
May 12, 2015
Researchers tested whether a novel S. equi vaccine could better prime a vaccinated horse's immune response.... Read More
Vaccination Checklist
April 30, 2015
Use this handy checklist and work with your veterinarian to determine which vaccinations are right for your horse. ... Read More
Horse Owners: Vaccinate Against WNV, EEE
April 27, 2015
Owners are encouraged to vaccinate their horses prior to the onset of peak mosquito season.... Read More
Stop Sale Placed on Pigeon Fever Vaccine
April 16, 2015
The voluntary stop sale is due to reports of unexpected post-vaccination gastrointestinal issues in some horses.... Read More
Vaccinate Horses Against West Nile Virus Now
April 14, 2015
Horses require two doses of the West Nile vaccine initially, and then boosters at least annually.... Read More
Vaccine Strategies for the Whole Herd
April 12, 2015
Design vaccination protocols to maximize each horse's innate and adaptive responses to disease challenges.... Read More
Spring Health Preparations
March 31, 2015
Check all these tasks off your list as you transition your horse into spring riding season.... Read More
It's Not Too Early to Vaccinate Horses Against EEE, WNV
March 27, 2015
Horses require two doses of the vaccinations initially and then boosters at least annually.... Read More
Equine Pigeon Fever Vaccine Granted Conditional License
March 05, 2015
A conditionally licensed vaccine must have demonstrated field safety and a reasonable expectation of efficacy.... Read More
How to Own a Horse Without Breaking the Bank
February 28, 2015
While you can't cut costs in all areas, here are several ways to reduce your horse-related expenses.... Read More
Shipping Horses Long Distances
February 16, 2015
Consider these factors when transporting horses afar, be it to a show or a new home. ... Read More
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Farm Call: Your Questions Answered
How Do I Get My Horse to Behave for the Veterinarian?
Q. I bought a 7-year-old Arabian mare that was supposed to be good for the veterinarian, farrier, etc. Not! She is very difficult to give shots to. Do you have any tips on how to get her to accept shots better?


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Without the generosity of people like you, our doctors, nurses and experts in rebuilding communities would not be able to do any of their lifesaving work.
Donations to International Medical Corps UK can be used to support all our work. Our 30 years experience of working with people in crisis situations around the world means we can allocate our resources in the most effective ways possible.
With our world-class programmes and expertise, we aim to train more health workers, respond quicker in emergencies and help relief the suffering of more individuals, families and communities build a better, healthier future, wherever they are and whatever the conditions.


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Expands cloud and software offerings for clients
Hewlett-Packard is partnering with fast-growing networking vendor Arista Networks to deliver more choices for an open converged infrastructure
Versatile President David Cote is pleased to announce three exciting changes to the company's growing team.
Big Data impacts everyone. Data centers, marketing systems, legal departments, information security systems, and IT operations are constantly flooded with data. It's changed everything we do and has impacted the way business gets done...


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Oliver Hohl
first of all thank you for this really interesting product!
I tried it a few times and it looks quite good for us. The only
thing we would need is a way to create reports based on a formerly
made .xml file from the command line.
Is there any way to accomplish this?
So that you could create a report with openrpt, save it as a xml
file and afterwards call a command line program without having to
have a x-session to create a printable version of that report.
I would appreciate any answer on that.
Thanks in advance
Chris Ryan
Unfortunately the way Qt's rendering/print engines work they require an x-session on linux for rendering the fonts. Because of this you won't be able to use any of the existing tools to render reports from a server process or other environment where an x-session environment is not present.
If you have an x-session and just need to be able to script printing from the command line then you can either write you own progam to process reports using the renderer library or you could use the rptrender application. With the 2.0 version the rptrender application has a number of command line arguments that it supports for loading and printing reports with different levels of user interaction depending on the arguments giving on the command line.
I hope this helps give you a better idea on what you are working on.
I didn't found the command-line parameter to print to PDF instead of to a printer. Does it exist? If not, any plan to add it soon? IMHO the ability to run the render from the command line is one of killer features if you manage lots of reports.
Chris Ryan
The code to print to pdf from the command line options was recently submitted and added to the rptrender application recently. It is in the latest CVS code for your use now.
Michael Hipp
Can anyone give me some examples of command-line usage with RPTrender (or a pointer to some documentation)?
I've looked at the stable source and I think I can see what the available options are, but haven't yet been able to get it to run 'fonts.xml' as mentioned in this thread: http://sourceforge.net/forum/forum.php?thread_id=1622897&forum_id=452903 .
Usually it does nothing but put up the "login" window or else it just dies with "Unable to load the database driver".
Here's an example of the sorts of command line options I've tried in various combinations...
rptrender.exe -noauth -pdf -databaseURL="" fonts.xml
I'm on W2k at the moment using 2.2.0 .
John Rogelstad
There is a user guide for OpenRPT at the xTuple downloads site with information about ODBC and run time switches. Hopefully that should get you pointed in the right direction. xTuple downloads can be found here: http://www.xtuple.org/?q=node/2077.
Michael Hipp
Thanks. That's the User Guide I've been using but never thought to look in the ODBC section as I'm not using ODBC.
chris newey
Somewhat off topic but what the hell,
If when opening a database that contains an OpenRpt table why why not throw up a report selection form as opposed to having to ferret around creating an xml file?
I think I'll play with this - essentially the code is there - just a question of calling it
Ned Lilly
Hi Chris,
You might want to take a look at our PostBooks project (http://sf.net/projects/postbooks) - a full ERP/accounting/CRM system that includes an embedded OpenRPT. It does just what you're talking about, under System / Master Information / Reports.
John Rogelstad
Actually the code already exists to do this. It was sponsored by an xTuple customer and is documented on our Issue Tracker log at http://www.openmfg.org/modules/bugbits/view.php?id=5563. It hasn't been documented in our help files yet, however. You can now select a report out of the database from the RPTRender File menu, or pass a command line argument -loadfromdb={reportname} to load a report from the db.
Note this is designed to work directly with the xTuple PostBooks/OpenMFG client, but it would work with any application that had a table called "report" that had the same data structure as the xTuple application. To see the report table structure, you can download a copy of the database schema from the PostBooks project on SourceForge.


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Jasmine, Sweet Orange and Vanilla
Temporarily Out of Stock
Take a drive down Sunset, or maybe Pico or the 10, and take in the scents of jasmine vines hanging over fences and orange blossoms left from a time when this land was covered with groves with a cozy dose of vanilla. Take a dip in the soothing salt water and you are there. Beach day.
California Sun-Dried Salt and Celtic Sea Salt from Brittany, France with Essential Oils. A day at the beach in your bath tub. Without the sand.
Directions: Add Salt Soak into the tub as it fills with water (preferably warm). Soak for 20-30 minutes. One pound bag is good for approximately 1-3 baths. Store in a cool, dark, dry place. enJOY!
Ingredients: Celtic Sea Salt (From Brittany France), Sodium Chloride (Salt Product of USA) Magnesium Sulfate (Epsom Salt), Sodium Bicarbonate (Baking Soda), Tocopheryl Acetate (Vitamin E), Vanilla Compound, Sweet Orange & Jasmine Essential Oils & LOVE.


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1. Mix all the dry ingredients- all purpose flour, wheat flour, salt, garlic powder if desired, yeast, sugar and olive oil well.
2. Mix milk and water, add into the flour and knead for about 5 minutes sprinkling over a little flour to get smooth dough.
3. Let it rise for about 25 to 30 minutes.
4. Heat a broad fry pan with lid to warm up.
5. On a rolling board, sprinkle little flour and pat with your hand applying force that is enough to spread the dough apart into a circle.
6. Pull the dough to spread if needed.
7. Place the pizza crust over the hot pan till golden brown in color.
8. Once bubbles start forming for about 3 to 5 minutes, flip and coat with pizza sauce.
9. If desired smear the sides of the crust with olive oil, lift and rotate the pan.
10. Spread a layer of cheese, cover the pan with lid and let the cheese to melt.
11. Scatter some olives on the pizza and serve.


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Welcome to www.orientalarchitecture.com, a photographic survey of Asia's architectural heritage. Here you can view over 20,000 photos of 896 sites in twenty-one countries, with background information and virtual tours. This website is a collection of photos from many different contributors.
Want to contribute to this website? Questions or comments? Read the FAQ.
Please spare a moment to sign our guestbook. Thank you!
Recent Additions
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If you find this site useful, please consider donating a small amount (1, 2, or 5 USD) to maintain this site and keep it totally free of advertising.


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Victoria Sandwich
|Dried egg powder
|60 Milliliter
|90 Milliliter
|100 Gram
|Caster sugar
|100 Gram
|Self-raising flour
|100 Gram
|1⁄3 Cup (5.33 tbs)
1. Grease 2 18 cm/7 in sandwich tins, line the bases with circles of greaseproof paper and grease the paper.
2. Blend the dried egg and 60 ml/4 tbls of the water together to a smooth cream. Stir in the remaining water.
3. Cream the butter or margarine and the sugar together until light and fluffy.
Gradually blend in the egg mixture, alternately with about 30 ml/2 tbls of the flour. Fold in the remaining flour.
4. Divide the cake mixture between the tins and level the tops. Bake in the centre of a moderately hot oven at 190°C/375°F/Gas mark 5 for 20 to 25 minutes. Cakes should spring back when pressed lightly with a finger and have begun to shrink from the sides of the tins.
5. Turn out the cakes on to a wire rack and remove the paper. Leave to cool. Sandwich the cakes together with jam and sprinkle a little caster sugar on the top.


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Britain's most senior Catholic leader, Cardinal Keith O'Brien, will now not take part in the conclave to chose a successor to Pope Benedict XVI, having been forced to resign early by allegations of "inappropriate conduct" made to the Vatican by several priests, both now retired and still serving.
Cardinal Peter Turkson may have badly damaged his prospects of becoming pope by suggesting that child sexual abuse is not a major problem in churches in Africa because homosexuality is looked on negatively. The remark is not only offensive but also reveals a dangerous ignorance that may undermine attempts to protect children.
The full roster of LentFest 2013 events in Glasgow can be found here: http://www.agap.org.uk/lentfest/lentfest-2013/
During discussions surrounding One Billion Rising, it was pointed out that, when it comes to creating a culture in which women may be viewed as inferior in some way, religion has a lot to answer for.


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Launcher icon for the notifffy application released recently by LunchCode Ind.
notifffy is Android homescreen widget and the easiest way to know about any incoming activity on the most creative community yet! It mimics @Dribbble website header and notifies you in case of any incoming activity.
Get the app right now from Google Play
More Alexey Chistyakov
keyboard shortcuts: ← previous shot → next shot L or F like Z toggle zoom


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The Sweetwater Texas Theatre Acquisition & Renovation (STTAR) board of directors announces "Live on Stage at the Texas", a live music performance on the original stage of the Texas Theatre, on Saturday, March 12, with Jay Boy Adams.
Several guests were on hand at the Sweetwater Rotary Club meeting held on Monday, Feb. 28 at the Texas State Technical College banquet room. The meeting held a double purpose in raising funds for the End Polio campaign spearheaded by Rotary International and highlighting the Rotary Youth Exchange program with a Powerpoint presentation from Jack Campbell.
FORT HOOD, TX--The United States Army Operational Test Command inducted long-time director Wayland Smith into the Testers' Hall of Fame during a ceremony celebrating the 17th year of the program recently at west Fort Hood.
Smith, a 1959 graduate of Sweetwater High School, is the son of Stella M. Smith, formerly of Sweetwater, and the late Cleave A. Smith. He is a 1966 graduate of Texas Tech University with a bachelor's degree in electrical engineering and a 1968 graduate of Texas A&M University with a master's degree in industrial engineering.


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All students desiring to pursue a Bachelor of Music, Bachelor of Music Education, or Bachelor of Arts in Music degree must audition before members of the appropriate applied music faculty for acceptance into a music degree program. Students may pursue either a BM or BA in Church Music.
The Church Music major in the Bachelor of Music (BM) program at Baylor allows students to concentrate on one of three different emphases depending on their primary instrument: keyboard, instrumental, or voice. The Bachelor of Arts program is designed in the liberal arts tradition and is a good fit for students who want a church music degree and who want to take additional courses outside of their major course of study.
All majors offered through the School of Music require ensemble participation each semester. The School of Music offers a variety of ensemble opportunities in the following areas: Band, Choir, Early Music Ensemble, Handbells, Jazz, Opera Theater, Orchestra and Chamber Music. The School of Music presents more than 300 concerts every year.
For more information: Church Music
|Here are the ten most popular topics for prospective students and parents.
|1. Scholarship and Cost Estimator
|6. Financial Aid
|2. Join the Mailing List
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|5. Value of a Baylor Education
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