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I would like to report the only problem I have had with CM7 on my DX2 is one of my apps not restoring data I backed up before flashing. Other than that, I LOVE THIS ROM! I used this ROM on my old Dinc and absolutely loved it then too. I feel at home with CM7, and since this is only a beta version, I can't wait for the final release!
It's been stated by a Google engineer that wiping battery stats will do nothing to help improve battery life.
Here's the article:
It's main purpose is to keep track of what has been using the battery. Wiping it just means you start over the monitoring of what is using the battery. It does nothing to improve or worsen your battery life.
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By ANGIE CARNATHAN
The experts tell us that New Year's Resolutions are more likely to be carried out if we 1) set reasonable goals, and 2) break those goals into bite-sized pieces.
A suspect allegedly involved in a Monday shooting at 1816 Stowood Road has been charged with murder, according to Oktibbeha County Deputy Sheriff Chadd Garnett.
Bail for Kewon Delarryous Doss, 19, of 1816 Stowood Road, will be set Wednesday. It is not currently known what time he will appear before the Oktibbeha County Justice Court. He is charged with killing 38-year-old Larry Davis, his uncle, with what authorities are saying is a medium caliber handgun.
The pursuit for Doss, which Garnett said lasted approximately five hours, ultimately took officers to a pasture in the Rock Hill Road area in eastern Oktibbeha County. When deputies returned to the sheriff's office to develop a new search plan, Doss, with the assistance of family members, turned himself in at approximately 9:45 p.m.
EUPORA — Mr. Frank Reid, 85, died Sunday, Jan. 8, 2012, University of Mississippi Medical Center in Jackson.
The Oktibbeha County School District Board of Directors received an evaluation report from the Mississippi Department of Education on both East Oktibbeha County Elementary School and East Oktibbeha County High School, which need to raise test scores this year or risk becoming charter schools.
Each school was visited in early September by a six-person observation team made up of highly experienced educational professionals contracted by MDE. The observations were simply a "snapshot," one MDE representative said, which included classroom observations, interviews and building walk-throughs to examine factors that would impact academic performance.
The report lists each school's strengths and challenges, along with findings and recommendations on leadership, curriculum and assessment, delivery of instruction and school climate and safety.
A suspect allegedly involved in a Monday afternoon shooting turned himself into authorities after alluding law enforcement for almost eight hours.
Shortly after 10 p.m., Oktibbeha County Chief Deputy Chadd Garnett said Kewon Delarryous Doss, 19, of 1816 Stowood Road, surrendered to authorities after he was sought for questioning in the shooting death of Larry Davis, his uncle.
At press time, charges were still pending.
Deputies responded to a call of shots fired with injuries at 1816 Stowood Road shortly after 2 p.m. Monday and found Davis, 38, inside the home with a single gunshot wound to the torso. Oktibbeha County Coroner Michael Hunt pronounced Davis dead at the scene.
Incoming Gov. Phil Bryant's swearing-in ceremony will begin at 11 a.m. today on the Mississippi State Capitol's south steps, weather permitting.
If the morning weather deteriorates, the ceremony could move into the Capitol. After taking the governor's oath of office, Bryant will officially become the state's 64th governor, succeeding two-term Republican Gov. Haley Barbour.
On Monday, Bryant's communication director, Mick Bullock, confirmed the cancellation of the inaugural parade due to the possibility of heavy afternoon rains in Jackson. The parade, Bullock said, is postponed until noon Jan. 21.
The Starkville School District Board of Trustees is expected to produce a list of candidates to interview for the district's superintendent position during tonight's 6 p.m. meeting in the Greensboro Center.
"I still have a very positive impression of the pool," board President Keith Coble said. "(The meeting) is going to start the process in how we move forward."
The Mississippi School Board Association spent several weeks in November interviewing candidates, checking references and writing up a report. The school board received the report in December, but took the holiday break to review the extensive report and make decisions.
Coble said the board members will discuss whom they would like to interview in executive session tonight.
Friends and family gathered at Calvary Baptist Church Sunday afternoon to pay tribute and celebrate the life of Devin Mitchell, the Starkville High School student and athlete who died on New Year's morning.
An overflow crowd came to the church, and many did not make it inside the doors.
As friends came around to pay their final respects, a slide presentation with photos of Mitchell at school, on the athletic fields and among friends was shown prior to the service.
The Mississippi State University-Meridian campus will expand today with the opening of the Newberry Building on Fifth Street, adjacent to the MSU Riley Center in downtown Meridian.
The Newberry Building was donated by the Riley Foundation in 2009, after sitting empty for nearly three decades. The 20,175 square-foot facility will house classrooms and offices of the MSU-Meridian Division of Business.
The building is a historical landmark and required some renovations before the university could take it over, which cost approximately $4 million, along with an additional $1.1 million to furnish and equip the building. City and university officials said they hoped the renovations would help bring new life to downtown Meridian.


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Rachael Wilson on the 'fast track' to the OlympicsComment
Just last month, Rachael Wilson smashed a national record. It took her about 72 seconds to circle the 200-meter track twice. That's more than five seconds faster than the previous U.S. record for girls 8 and under.
Oscar Pistorius lawyers file appeal against bail restrictionsComment
Lawyers for Oscar Pistorius have filed an appeal in a South African court against bail restrictions imposed on the Olympian, who is charged with murdering his girlfriend, according to papers released by the Pistorius family on Monday.
Oscar Pistorius case: South African PR company won't represent PistoriusComment
A South African public relations company says it will no longer represent Oscar Pistorius, the double-amputee athlete charged with murdering his girlfriend.
Oscar Pistorius case: Lead investigator in case replaced over his own attempted murder chargesComment
South African police on Thursday appointed a new chief detective in the murder case, replacing a veteran policeman who was himself charged with attempted murder.
2024 Summer Olympics: Would Washington, D.C. serve as a possible host?Comment
Would Washington, D.C. make a good Olympic host? The District was among a fairly large group of cities approached by the U.S. Olympic Committee to consider a bid for the 2024 Summer Olympics.
Oscar Pistorius: Testosterone, needles found in Olympian's bedroom, police sayComment
A substance found in Oscar Pistorius' bedroom was an "herbal remedy" and not banned, his defense lawyer said Wednesday, after police claimed they discovered two boxes of testosterone and needles in the Olympic athlete's house.
Reeva Steenkamp murder: Oscar Pistorius charged in girlfriend's shooting deathComment
Oscar Pistorius has been charged with the murder of his girlfriend Reeva Steenkamp, a model who spoke out against rape and abuse of women. In downtown D.C. Thursday, news of the crime added outrage to a rally protesting violence against women.
2020 Olympics: IOC drops wrestlingComment
In a surprise decision Tuesday, the IOC executive board decided to retain modern pentathlon and remove wrestling from the 2020 Olympics.
Olympics 2020: Turkish companies sponsor Turkey's bid to hostComment
Istanbul signed up seven leading Turkish companies Monday to sponsor the city's bid for the 2020 Olympics, a $20 million deal that organizers said underlines the country's economic muscle at a time of global financial uncertainty.
Suzy Favor Hamilton: Former 3-time Olympian admits to working as 'escort'Comment
Three-time Olympian Suzy Favor Hamilton says she coped with depression and a troubled marriage by turning to a life of prostitution.
Kellogg's Tour of Gymnastics Champions 2012 comes to D.C.Comment
Olympic gymnasts, including some 2012 gold medalists, are coming to town as part of the Kellogg's Tour of Gymnastics Champions 2012.
Shaun White arrested on charges of public intoxication and vandalismComment
Two-time Olympic gold medalist snowboarder Shaun White faces charges of public intoxication and vandalism, accused of drunkenly destroying a phone at a Nashville hotel and ending up in the hospital after he hit his head.
Gabby Douglas: Racism claims rebutted by Virginia Beach gymComment
Today's session on the pop-culture bars finds a disgruntled gold medalist charging unpleasant things, people lining up to talk to Katie, other things, and the mystery music video.
Team USA wins gold in men's basketballComment
The U.S. men's basketball team defended its title by fighting off another huge challenge from Spain, pulling away in the final minutes for a 107-100 victory Sunday that gave the Americans their second straight gold medal.
Caster Semenya: Gender test behind her, an Olympic silver will doComment
Three years after being forced to undergo gender tests after winning the world title in a stunningly fast 1 minute, 55.45 seconds at age 18, Caster Semenya can introduce herself as an Olympic medalist.
London 2012 closing ceremony set for SundayComment
The curtain comes down today on the two-week festival of sports with a thunderous celebration of British music, from the classical compositions of Elgar to the classic rock of The Who.
Money-saving tips for your future OlympianComment
The 2012 games has a lot of youngsters starry-eyed with dreams of Olympic glory, but a commitment to a sport can take a financial toll on a family, as lesson, travel and equipment adds up.
Allyson, Misty, Kerri, Kobe, LeBron give US big Olympic nightComment
Highlights, Wednesday, Day 12 of the London Olympics: -Allyson Felix leads American surge at track. -May-Treanor, Walsh take all-American final in beach volleyball. -Kobe's long-range display leads U.S.
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Foodist Approved: Maple and Spice Baked Apples
I can't decide what wins me over more, the aroma of apples baking or the first steaming bite of a bursting baked apple. When it comes to these Maple and Spice Baked Apples both are equally mesmerizing.
If you're hunkered down due to the snow and rain slamming much of the country, here's a heartwarming sweet treat guaranteed to turn this winter slog around. This dressed up version of classic, whole baked apples calls on browned butter, sweet spices and maple syrup.
Follow the recipe below or get creative and stuff your apples with whatever variation of nuts, dried fruit, chocolate or nut butters you have on hand.
Bonus: you have our full permission to eat the leftovers for breakfast—simply warm and serve with a spoonful of whole milk yogurt.


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by RII
Review: We have eaten there several times. Enjoyed it every time. They have a covered outdoor room and an air conditioned room Especially recommend the Margareta pizza,Verdue (roasted veg) and 4 cheese pizza (only if you talk to the manager Fabio who will personally select rennetless cheeses), Mista salad, Greek salad and Ricotta mouse desert.
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2341-2355 of 6467 retirement properties and retirement homes, managed by Small private care home owner.
15 Cann Hall Road, Leytonstone, London E11 3HY.
Care home
"St Catherine's is a small Home that prides itself on quality care. Clients and their relatives are encouraged to view St Catherine's as their Home staff do not wear uniforms and are addressed by their Christian names. We all respect that ..."
0208 5552583
Email your enquiry
61 St George's Square, London SW1V 3QR.
Care home with nursing
020 7821 9001/2
27 The Drive, Chingford, London E4 7AJ.
020 8529 7952
16 The Drive, Ilford IG1 3HT.
"The home has a qualified training consultant and counsellor. We assess dietary needs and help plan suitable nutritional menus. The home also assesses and monitors residents who suffer from dementia. We then create an activity programme esp..."
020 8518 3004 / 8554 3755
29-31 Mayfield Road, Sutton SM2 5DU.
020 8643 1335
7 Southborough Road, Surbiton, Surrey KT6 6JN.
020 8399 2085
3/5 Priestlands Park Road, Sidcup DA15 7HR.
"A small friendly home with a friendly environment. All meals are cooked fresh each day using fresh meat and vegetables"
020 8300 2745
80 Aldersbrook Road, London E12 5DH.
020 8530 5972
86 Culverley Road, London SE6 2JY.
0208 697 1304
Burlington Lane, Chiswick, London W4 2QE.
"St Mary's is run as an extended Christian family and has a peaceful and informal atmosphere. The Home is still an active Church of England site, some religious sisters still live and work here as part of the Home. As a result, the Home cele..."
020 8994 4641
71 Ormond Avenue, Hampton TW12 2RT.
020 8979 2847
81/83 Cheam Road, Sutton SM1 2BD.
020 8661 6215
327 Main Road, Sidcup DA14 6QG.
020 8302 7289
40/46 Roland Gardens, London SW7 3PW.
020 7373 5820
12 Lansdowne Road, Wimbledon, London SW20 8AN.
020 8879 7366
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- The first step is to check your current insulation: is there any? What state is it in?
- Check what the R values are for your climate zone (see 'Building Code requirements' above).
- Make sure all leaks (roof and pipes) are repaired so the new insulation doesn't get wet. Damp insulation is less effective.
- Have an electrician check you can safely cover electrical wiring that can't be placed outside the insulation.
- If you have recessed downlights that are not closed abutted (CA) rated, replace them to eliminate the air gaps. CA rated recessed light fittings are now available that allow insulation to touch them. If you're not replacing the downlights, check to see how big a gap in the insulation is needed around each light fitting to prevent over-heating.
- Choose a product that is independently accredited and complies with the standard AS/NZS 4859.1: 2002. Compliance with this standard is mandatory under the Building Code. A compliance statement must be on the label of the insulation.
- Wear a dustmask, goggles, gloves, long sleeved shirt and closed footwear when installing fibre insulation products.
The quality of installation is of paramount importance. Even small gaps will undermine the performance of the insulation. A comprehensive easy-to-use guide on installing insulation is available as a free download from www.energywise.govt.nz.


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A method of forming an improved planarization mask for shallow trench isolation process area in integrated circuit manufacturing is disclosed. The planarization mask is generated automatically by using actual mask data as a reference. The invention discloses an algorithm which measures the geometric and relative separation distances of the active areas and performs the necessary merging, deletion and differential biasing to produce the planarization mask which has relaxed geometric boundaries, thereby allowing low cost and simplified manufacturing.
1. A method of making a planarization mask, comprising the steps of;
(a) measuring dimensions of active areas;
(b) measuring a distance between adjacent active areas;
(c) merging adjacent active areas when the measured distance between the adjacent active areas is less than a first threshold value; and,
(d) increasing the dimension of an active area when the width of the active area is greater than a second threshold value.
2. The method of claim 1, wherein the first threshold value has a range of 0.355 μm-0.375 μm.
3. The method of claim 1, wherein the second threshold value has a range of 0.5 μm-0.625 μm.
4. The method of claim 2, wherein the first threshold value is 0.375 μm.
5. The method of claim 3, wherein the second threshold value is 0.5 μm.
6. The method of claim 1, further including the step of:
(e) decreasing the mask size over an active area having a width greater than a third threshold value.
7. The method of claim 6, wherein the third threshold value is 0.625 μm.
8. A method of forming an integrated circuit structure comprising the steps of:
(a) forming a plurality active areas on a substrate, said active areas forming an integrated circuit structure;
(b) depositing an oxide layer over the active layers;
(c) forming a patterned mask over the oxide layer, the patterned mask having a plurality of openings having a width in registry with the active areas by,
(c1) determining the size of the active areas;
(c2) determining the distances between the active areas;
(c3) including in the mask area the distance between the plurality of active areas, inclusive of the active areas, when the distances between adjacent active areas is below a first threshold value;
(c4) including in the mask area the distance between active areas, inclusive of the active areas, when the distance between adjacent active areas is below a second threshold value, the second threshold value being different from said first threshold value; and
(c5) reducing the size of an active area when the size of a resulting active area is greater than a third threshold value;
(d) etching the areas not in registry with the mask; and
(e) polishing the masked areas to obtain a highly planarized layer over the integrated circuit structure.
9. The method of claim 8, wherein the first threshold value is 0.375 μm.
10. The method of claim 8, wherein the second threshold value is 0.5 μm.
11. The method of claim 8, wherein the third threshold value is 0.625 μm.
12. A method of making an integrated circuit structure having a plurality of adjacent active areas spaced apart by a distance, a method for providing a planarization mask used to form a planarization layer on the integrated circuit structure, comprising the steps of:
(a) measuring the sizes of the individual active areas;
(b) increasing the active areas to merge the adjacent active areas when the distance between adjacent active areas is below a first value; and
(c) increasing the size of an active area when the active area has a width smaller than a second value.
13. The method of claim 12, further including the steps of:
(d) reducing the size of an active area when the width of the active area is greater than a third value; and
(e) reversing the polarity of the mask.
14. The method of claim 12, wherein the first value is 0.375 μm.
15. The method of claim 12, wherein the second value is 0.5 μm.
16. The method of claim 13, wherein the third value is 0.625 μm.
17. The method of claim 12, wherein step (d) includes the following steps:
(B1) measuring the width of a first individual active area on the semiconductor substrate;
(B2) measuring the width of a second individual active area;
(B3) measuring the distance between the first active area and the second active area; and
(B4) merging the resist width covering the first individual active area and the second individual active area when the measured distance between the first and second active areas is a predetermined value.
18. The method of claim 12, wherein the width of the resist mask in step (c) is increased by the value of 0.0625 μm.
19. The method of claim 13, wherein the size of the resist mask in step (d) is reduced by 0.0625 μm per side.
A portion of the disclosure of this patent document contains material which is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure as it appears in the U.S. Patent and Trademark Office patent file or records, but otherwise reserves all copyright rights whatsoever.
This invention generally relates to integrated circuit technology and, more particularly, to an improved method of forming highly planarized oxide portions on integrated circuits through the use of an improved planarization mask.
Integrated circuit structures have field oxide grown on the surface of a semiconductor substrate to provide oxide isolation between active regions formed on the semiconductor substrate. The isolation is performed by masking the active regions of the substrate and then oxidizing the remaining portions of the substrate. For example, when growing an oxide layer of a particular thickness, the oxide growth will extend down into the substrate about one-half the total thickness and also extend about one-half the total thickness above the original semiconductor substrate surface. Such a technique, called local oxidation of silicon (LOCOS), is widely used in the semiconductor industry.
An advanced integrated circuit fabrication technique, called shallow trench isolation (STI), is used in forming planar integrated circuit topographies. In the STI manufacturing process, a silicon trench is etched and then filled with a non-conducting material such as oxide. A planarization step is performed to remove the previously deposited oxide from the top of the active areas while keeping the silicon trenches filled with oxide. The active areas are then ready to have active devices built on them while the oxide filled trench regions provide electrical isolation. U.S. Pat. No. 4,954,459, which is assigned to the same assignee as the present application, describes a planarization method using a reverse etch mask to etch away oxide present in the active areas to achieve a first order planarization which is then followed by a chemical and mechanical polish (CMP) to complete the planarization process.
While the conventional manufacturing methods described above provide planarized structures, they are not well suited to provide the small planarized active regions required in present IC structure.
The present invention solves the aforementioned and related drawbacks associated with highly planarized integrated circuit structures having very dense active regions. A method of providing a planarization layer using a novel planarization mask is provided. The planarization mask provides that photoresist is placed only where needed within a semiconductor structure. Very narrow spaces between active regions where resist actually is needed for reverse masking schemes are removed. Thus, the planarization mask can be made much more loosely as compared to conventional methods, allowing less expensive lithographic techniques to be used during manufacturing.
The mask used to provide the planarization layer is provided by: measuring the width of the active areas formed on a semiconductor substrate; measuring the distance between the adjacent active areas; merging the adjacent active areas of the semiconductor substrate when the measured distance between adjacent active areas is below an initial threshold value; increasing the mask size of an active area when the width of the active area is below a second threshold value; decreasing the mask size over an active area having a width above a third threshold value, and reversing the polarity of the mask. This method results in a mask which opens all of the active areas of an integrated circuit structure. Thus, upon etching of the oxide layer, a highly planarized integrated circuit structure results.
An advantage of the present invention is the ability to loosen the geometry requirements of a photoresist mask to provide for better planarization.
Another advantage of the present invention is that it makes the chemical and mechanical polish process easier by exposing a larger amount of oxide in the active areas which allow them to be removed during planarization etch.
Yet another advantage of the present invention is that it reduces manufacturing costs.
Still another advantage of the present invention is that it allows for the fabrication of high density integrated circuits.
Yet still another advantage of the present invention is that it simplifies the manufacturing process.
A feature of the present invention is that it can be implemented with standard processing techniques.
Another feature of the present invention is that the planarization mask can be produced by an automated process.
These and other advantages and features of the present invention will become apparent from the following description of the embodiments, taken in conjunction with the accompanying drawings, where like numerals represent like elements, in which:
FIGS. 1-7 present schematic cross-sectional side views of a conventional shallow trench isolation process;
FIGS. 8 and 9 present schematic cross-sectional diagrams showing the relaxed planarization mask being applied according to the present invention;
FIGS. 10a-10d depict a flow chart showing the steps performed to provide the planarization mask according to the present invention;
FIGS. 11-18 illustrate a top view of the development of a planarization mask according to the present invention.
The present invention is directed to an improved manufacturing process for forming highly planarized topologies on integrated circuit structures by providing a planarization mask having relaxed boundary conditions. The process described below is discussed with respect to shallow trench isolation techniques. However, it may be used in conjunction with any manufacturing technique.
FIGS. 1-7 illustrate an example of a conventional STI manufacturing process for providing a planar integrated circuit structure.
As shown in FIG. 1, the process starts with a substrate 10 of p-type semiconductor material such as, for example, silicon having an oxide layer 12 grown thereon. The oxide layer 12 is grown to a thickness of approximately 150 Å. Next, a nitride layer 14 is deposited on the oxide layer 12 using low pressure chemical vapor deposition (LPCVD) techniques.
Following the nitride deposition (FIG. 2), photoresist 16 is applied over the nitride layer 14 which defines a resist pattern of active regions where active devices such as transistors, diodes, capacitors, etc. will be built. A trench etch is then performed to etch away the nitride layer 14 and oxide layer 12 to form a step 13 in the silicon 10 having a depth of between 3000 Å-4000 Å below the top of the silicon surface.
As shown in FIG. 3, the photoresist 16 is removed and a layer of thermal oxide 18 having a thickness of approximately 500 Å is grown inside silicon trench 13.
Next, as shown in FIG. 4a, a layer of conformal oxide 20 having a thickness of approximately 6200 Å is deposited at a temperature in the range of between 700� C.-800� C. over the structure. The conformal oxide 20 is preferably a highly conformal oxide such as, for example, LPCVD tetraethyl orthosilicate (TEOS). Another layer of photoresist 22, having a polarity opposite of the photoresist layer 16 is applied in FIG. 2, is used to form the resist mask pattern which defines the field (isolation) regions.
After the resist mask 22 has been placed over the isolation regions, an etch is performed, generally an isotropic etch, achieved by either wet chemistry (such as diluted HF) or by reactive ion etching (RIE) to etch the conformal oxide layer 20 down to a distance approximately 800 Å above the nitride layer 14 as shown in FIG. 5. After the etching step, two pillars 17, 19 are present at the junction between the conformal oxide 20 and the photoresist mask 22. A CMP is then performed to remove the pillars 17, 19 to achieve global planarization as shown in FIG. 6. The resulting structure, shown in FIG. 6, has a more planar topography than the structure shown in FIG. 4.
The nitride layer 14 acts as a CMP stop which is exposed free of oxide to allow the subsequent processing step to completely strip off the nitride in a phosphoric acid bath. The phosphoric acid has a temperature in the range of between 100� C.-180� C., and preferably 150� C. The resulting structure is shown in FIG. 7 where the nitride layer 14 is removed, exposing the active regions 2, 4 where active devices may be constructed. However, as the density of integrated circuit structures increases and the physical area available on semiconductor wafers decreases, the gap 13 (FIG. 2) between active regions 2 and 4, for example, becomes more narrow. For example, as gap widths between active regions are approaching the 1/4 μm size, it becomes increasingly difficult and expensive to use the standard reverse planarization mask scheme because it requires the printing of very narrow lines (for example photoresist 22 in FIG. 4a) and very narrow spaces (labeled 23') in FIG. 7b. Resolving such fine line and space dimensions are extremely difficult even with expensive, state of the art equipment.
FIG. 8a presents a cross-sectional side view of the planarization mask 22 produced according to the present invention. FIG. 8a should be compared with FIG. 7b where the conventional reverse mask 22 is applied. The small photoresist line 22 in FIG. 4a is purposely removed in FIG. 8a according to the method of the present invention. By eliminating the thin resist line 22, the necessity of printing fine lines required by the conventional reverse mask scheme is obviated. In areas where narrow spaces are required by the conventional reverse mask scheme (space 23' in FIG. 7b), the current invention will oversize such space, as shown in greater detail in FIG. 8b, such that it can be resolved by conventional lithography processes.
A potential hazard of achieving the structure shown in FIG. 8a is the exposure of a TEOS seam 25 which, during a subsequent etching step, etches much faster than the plain TEOS surface 20. As shown in FIG. 9a, when the TEOS seam 25 becomes overetched, a depression 13 in the field region (TEOS region 20) is formed which acts as a trap for unwanted contaminants. Such unwanted contaminants can cause the devices formed in the active regions 2 and 4, respectively, to short.
A potential hazard of achieving the structure shown in FIG. 8b is that if the oversized space created according to the method of the present invention is too large, the subsequent etching step will etch into the field region, causing the depression as shown in FIG. 9b. The inventor recognizes, through experimentation, that seams in narrow gaps are stronger (i.e., less likely to be overetched) than those in wider gaps. Therefore, by choosing a maximum width whose seams are strong enough not to be overly etched, fine resist lines can be removed, thereby achieving the relaxed planarization mask geometry shown in FIG. 8a without creating the problems discussed with respect to FIG. 9a. Also helping to prevent excessive seam depression is a properly designed etched target for removing the deposited TEOS such that the maximum seam depression is above the nitride surface 14 so that the subsequent CMP can polish the depression. Such etch target is about 800 Å in the case the of a 6,200 Å TEOS depression layer.
The method of the present invention also provides for a limit to the oversizing of narrow spaces in order to avoid the potential hazard as discussed with respect of FIG. 9b. The recognized limit (or threshold value) is used in the algorithm described below to generate a relaxed planarization mask without compromising the final STI structure.
FIGS. 10a-10d illustrate a flow chart presenting the steps used to form the novel planarization mask according to the present invention. In real application, the steps are performed on a Hewlett-Packard engineer workstation using IC verifier software, produced by Mentor Graphics of San Jose, Calif., which converts the active mask data (input data) into the planarization mask data (output data) which is then used to generate the mask. The relevant portions of the program code � 1997 Advanced Micro Devices, Inc., is presented below as Exhibit A.
The first step 100 (FIG. 10a) in forming the planarization mask of the present convention is to measure the widths of all the active regions. Step 102 requires measuring the widths of the gaps between the active regions. All active regions having a width less than or equal to 0.375 μm which touch an adjacent larger regions (width of greater than 0.625 μm) are removed in step 104. The function of the following steps is to delete small active areas that form part of a larger active piece. These small areas will not present any planarization problems, so they can be ignored. By ignoring small areas, the active area geometry is simplified, allowing more room for subsequent manipulation.
As shown in step 106 if the gap width between adjacent active regions is less than or equal to 0.375 μm and the widths of the adjacent active regions are also less than or equal to 0.375 μm, then you merge the adjacent active regions with the gaps in step 108. If the gap width between the adjacent active regions and the width of the active regions are both greater than 0.375 μm, then reduce the width of the active regions by 0.0625 μm per side in step 110.
Next, a measurement of the gap width between the active regions is taken in step 112. If the gap width is less than or equal to 0.375 μm, the mask width is increased by 0.0625 μm per side so that the mask partially covers the adjacent active region in step 114. If the gap width between the active regions is greater than 0.375 μm, the width of the active region is measured in step 116 (FIG. 10b). If it is determined in step 116 that the width of the adjacent active regions are greater than 0.5 μm, the active regions are shifted into an adjacent gap in step 122. Steps 118 and 120 provide for the removal of all active regions having a width less than 0.5 μm which are separated by a distance of less than 0.5 μm. After those steps are completed, the very narrow features present in the base structure are removed, thereby relaxing the boundary conditions of the active regions.
In step 124, a differential bias operation is performed on the base structure which results in mostly rectangular surfaces being present on the mask. In step 130 the widths of the active regions are measured. If the width is less than 0.375 μm, the width of the active regions are increased by 0.125 μm per side in step 131. On the other hand, if the width of the active region is between 0.375 μm and 0.5 μm (step 132), the active region is increased by 0.0625 μm per side. Next, all the active regions having a width smaller than a pre-defined value are combined in step 134. In one embodiment of the present invention, all active regions having a width less than approximately 0.5 μm are combined in step 134. After the differential bias of step 124 has been completed, the remaining substructures present on the integrated circuit are cleaned up in step 126.
FIG. 10d shows the cleanup process of step 126 in greater detail. After the active regions having a width smaller than below approximately 0.5 μm are merged in step 135, any remaining small substructures having an area less than or equal to 0.0625 μm are removed in step 136. In step 137, remaining if the gap width is less than 0.375 μm, the gap width is subsequently increased by 0.125 μm per side in step 138. If the gap width is between 0.375 μm and 0.5 μm (step 139), the gap width is increased by 0.0625 μm per side in step 140. Next, in step 141, the previously increased gaps are merged with any adjacent active regions having widths less than 0.5 μm. At this point, any notches or openings having widths less than or equal to 0.375 μm are filled in step 142. Finally, any adjacent gaps having widths less than or equal to 0.375 μm are merged together and any holes within the remaining structure less than 0.5 μm are filled in in step 143. At this point all small features present in the base structure have been removed, thereby providing features mask having widths 0.5 μm and higher which are easier to finely and cleanly etch than features present in conventionally developed masks.
Returning to FIG. 10d, after the gap widths of the mask are increased in steps 138 and 140, respectively, the gaps are merged with adjacent active regions having widths less than 0.5 μm in step 141. Notches having widths less than or equal to 0.375 μm are filled in step 142 and finally gaps having widths less than or equal to 0.375 μm are merged and any remaining active regions having widths of less than 0.5 μm are filled in step 143. At this point the polarity of the completed mask is reversed. In general, the reversing of the mask polarity is done at the mask manufacturer.
FIGS. 11-18 provide the top view of the steps used to develop the planarization mask according to the method of the present invention.
FIG. 11 illustrates the top view of a base integrated circuit structure. In FIG. 11, a plurality of active regions 30-46 are separated by gaps of various widths. For example, active region 30 is separated from active region 32 by a gap width greater than 0.5 μm. Active region 32 is separated from active region 34 by a gap width greater than 0.5 μm. Active region 34 has a width of approximately 0.4 μm and is separated from larger, active region 36 by approximately 0.4 μm. Active regions 38-42 are each separated from one another by a gap width greater than 0.5 μm. Active regions 44 and 46 each have a width of approximately 0.375 μm and are separated by a gap width of approximately 0.375 μm.
As discussed above, the first steps performed to develop the planarization mask of the present invention steps call for measuring the active regions and removing those active regions having a width less than or equal to 0.375 μm and a total area less than or equal to 0.1875 μm2. This results in active regions 30 and 32 being transformed into active regions 30' and 32' having regions 30a-30d being removed from active region 30 and regions 32a-32d being removed from active region 32 as depicted in FIG. 12. Also, as shown in FIG. 12, active region 40' is shown as original active region 40 with extra portion 41 being removed.
The next step in forming the planarization mask is to merge all active areas having a gap width less than or equal to 0.375 μm when the adjacent active region has a width of less than or equal to 0.375 μm. This results in active regions 44 and 46 being merged to form a new active region 44' as shown in FIG. 13.
FIG. 14 shows the result of performing step 110 where all active regions are reduced by 0.0625 μm per side with all active regions having a width of greater than 0.625 μm being reduced by 0.0625 μm per side. The slashed regions represent the active regions after being reduced by 0.0625 μm per side. This results in the gap widths between active regions being increased 0.0625 μm per side which results in active regions that are easy to clearly etch.
FIG. 15 represents the mask structure according to the present invention after performing steps 112 and 114 where the gap width is increased by 0.0625 μm per side into any adjacent larger active region when the measured gap width is less than or equal to 0.375 μm.
This is shown in FIG. 10 by the newly formed indent 36a in active region 36". Also, as a result of such an operation, element 31' has forced the increase in gap width into elements 29' and 29a' thereby resulting in newly formed elements 29" and 29a". The same effect also occurs in active element 32' where the active element 33 causes the gap width between active region 33 and active regions 35' and 35a' to form new active regions 35" and 35a'.
FIG. 16 shows the results of performing step 122 where a portion of the active region is shifted into a nearby adjacent gap when the active region has a width of less than 0.5 μm and a gap width of less than 0.25 μm. Thus, elements 29" and 29a" are now pushed out, thereby forming larger rectangular structures which are easier to etch. Active regions 35" and 35a" are also enlarged.
FIG. 17 shows the results after the differential bias of step 124 is performed. The result of the differential bias 124 is that all active regions will have a width of approximately 0.5 μm, thereby making the active regions easy to clean and etch. Differential bias of step 124 causes active region 34' to be increased by 0.0625 μm per side, to form a new active region 34'. The differential bias of step 124 also causes an increase in the active regions of 36" and 40", where each of the active regions is increased by 0.0625 μm per side resulting in new active regions 50 and 60 respectively.
The final step in fabricating the planarization mask of the present invention is to merge and clean up any remaining active regions such that there are no small active features nor a very narrow gap width in the resulting semiconductor structure. An example of the merging process 126 is shown in FIG. 18a which illustrates an original base structure 62 having a hole 62a formed therein and another active region 64 having a notch 64a formed therein. After step 126 is performed, the hole 62a is removed thereby forming a new active region 62a which is completely filled in. At the same time, the notch 64a of previous active element 64 (FIG. 18a) is filled in thereby forming rectangular active region 64'.
FIG. 18b shows the resulting planarization mask structure according to the present invention. As shown in FIG. 14, active regions 30", 32", 34", 50, 38', 60, 42' and 44' are all generally rectangular in shape and have a width of approximately 0.5 μm. Also, the active regions listed above are all separated from each other by a distance of approximately 0.5 μm which makes the gaps between the active regions much easier to etch than in conventional systems where etching of widths in the 1/8 μm range is sometimes necessary. By forming the planarization mask according to the present invention, larger dimensions and more loose boundary conditions result which provides planarized structure.
The foregoing description of the embodiments has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and obviously, modifications and variations of the invention are possible in light of the above teaching. The generation of a loose planarization mask having relaxed boundary conditions for use in shallow trench isolation processes was described in order to best explain the principles of the invention and its practical application to thereby enable others skilled in the art to best utilize the invention and various embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims appended hereto.
______________________________________EXHIBIT A � 1997 Advanced Micro Devices, Inc.______________________________________//Layer Names and GDS Number AssignmentsLAYER NWM 2LAYER NACT 3LAYER PACT 4//Special Mask DataLAYER TCSPEC 35LAYER L36 36LAYER L37 37LAYER L41 41LAYER SPECIAL 59LAYER BLOCK 62//Special LVS LayersLAYER XCLUDE 6//LAYER CAPID 21LAYER BPR 32//BLOCKPRE = EXTENT//BLOCK = SIZE BLOCKPRE BY 1.0////____________________________________;// Mask Layer: 18 PLN (Planarization) ;// Field :DARK ;// Mebes-Unit : 0.125u//____________________________________;//setup SDM (R10) firstSDM = OR NACT PACTR10TM1 = OR SDM L41//start R18 generationL35EL37 = TCSPEC ENCLOSE L37L37IL35 = L37 INSIDE TCSPECR18TM3 = R10TM1 NOT L35EL37R18TM4 = R18TM3 or L371L35R18TM5 = R18TM4 NOT L102//delete small polygons (area <=0.375 � 0.5)touchinglarge polygonsR18TM610 - INTERNAL R18TM5 <=0.375 REGION OPPOSITEPARALLEL ONLYR18TM611 = R18TM5 NOT R18TM610R18TM612 = INTERNAL R18TM611<=0.375 REGION OPPOSITEPARALLEL ONLYR18TM61 = R18TM610 or R18TM612R18TM62 = AREA R18TM61>0 <=0.188 //round off from0.1875R18TM63 = R18TM5 NOT R18TM62.R18TM64 = R18M62 TOUCH R18TM63R18TM6 = R18TM5 NOT R18TM64//merge spaces <=0.375 with polygons <= 0.5R18TM711 = INTERNAL R18TM6<0.5 REGION PPOSITE PARALLELONLYR18TM712 = R18TM6 NOT R18TM711R18TM713 = INTERNAL R18TM712<0.5 REGION OPPOSITEPARALLEL ONLYR18TM71 = R18TM711 OR R18TM713 //include cornersand bendsR18TM721 - EXTERNAL R18TM6<=0.375 REGION OPPOSITESPACE PARALLEL ONLYR18TM722 = R18TM6 NOT R18TM721R18TM723 = EXTERNAL R18TM722<=0.375 REGION OPPOSITESPACE PARALLEL ONLYR18TM72 = R18TM721 or R18TM723 //include corners andbendsR18TM73 = R18TM72 TOUCH R18TM71R18TM74 = AREA R18TM73>= 0.14 //round from 0.140625make sure the overlap is >= 0.375R18TM7 = R18TM74 or R18TM6//size down every polygon by 0.06u/sideR18TM8 = SIZE R18TM7 BY -0.06//size up space by 0.06u from adjacent large polygonR18TM911 = EXTERNAL R18TM8 <=0.495 REGION OPPOSITESPACE PARALLEL ONLYR18TM912 = INTERNAL R18TM8 < 0.495 REGION OPPOSITEPARALLEL ONLYR18TM913 = R18TM911 TOUCH R18TM912R18TM9131 = R18TM912 TOUCH R18TM911R18TM914 = INTERNAL R18TM8<0.625 REGION OPPOSITEPARALLEL ONLYR18TM915 = R18TM8 NOT R18TM914R18TM9151 = INTERNAL R18TM915 <0.625 REGION OPPOSITEPARALLEL ONLYR18TM9152 = R18TM915 NOT R18TM9151R18TM9153 = R18TN915 NOT TOUCH R18TM9131 //not part ofsmall polygonR18TM916 = COINCIDENT EDGE R18TM9153 R18TM913R18TM917 = EXPAND EDGE R18TM916 INSIDE BY 0.06//delete small poloygons <=0.5 � 0.125R18TM918 = R18TM8 NOT R18TM917R18TM9181 = INTERNAL R18TM918<0.495 REGION OPPOSITEPARALLEL ONLYR18TM9182 = AREA R18TM9181 <= 0.062 //rounded off from0.0619R18TM92 = R18TM918 NOT R18TM9182//shift small polygons <0.495 near minimum space<=0.495 into nearby large spaceR18TM921 = EXTERNAL R18TM92 <=0.495 REGION OPPOSITESPACE PARALLEL ONLYR18TM93 = R18TM912 TOUCH R18TM921R18TM94 = INTERNAL R18TM93! <0.495R18TM95 = EXPAND EDGE R18TM94 OUTSIDE BY 0.12R18TM96 = R18TM95 NOT R18TM921R18TM961 = R18TM92 or T18TM96R18TM971 - R18TM92 NOT R18TM93//differential sizing// polygons < 0.375 bias up 0.12u/sideR18TM9711 = INTERNAL R18TM971 <0.375 REGION OPPOSITEPARALLEL ONLYR18TM9712 = R18TM971 NOT R18TM9711R18TM9713 = INTERNAL R18TM9712 <0.375 REGION OPPOSITEPARALLEL ONLYR18TM972 = R18TM9713 or R18TM9711 //included cornersand bends <0.375R18TM973 = SIZE R18TM972 BY 0.12//polygons >=0.375<0.495 bias up 0.06u/sideR18TM9731 = INTERNAL R18TM961 >=0.375<0.495 REGIONOPPOSITE PARALLEL ONLYR18TM9732 = R18TM961 NOT R18TM9731R18TM9733 = INTERNAL R18TM9732 >=.375 <0.495 REGIONOPPOSITE PARALLELONLYR18TM974 = R18TM9733 OR R18TM9731 //included cornersand bends >=0.375<0.5R18TM975 = SIZE R18TM974 BY 0.06// add all polygons togetherR18TM97 = R18TM973 or R18TM975R18TM98 = R18TM97 or R18TM96R18TM9 = R18TM98 or R18TM92//FINAL MERGE AND CLEAN UPS//delete small active width <=0.25, area <=0.25 � 0.125R18TM1011 = INTERNAL R18TM9 <=0.25 REGION OPPOSITEPARALLEL ONLYR18TM1012 = AREA R18TM1011 <=0.031 //round off from0.03125R18TM1013 = R18TM9 NOT R18TM1012//delete larger polygons again <=0.495, area <=0.495 �0.125R18TM1014 = INTERNAL R18TM1013 <=0.495 REGION OPPOSITEPARALLEL ONLYR18TM1015 = AREA R18TM1014 <=0.062 //round offfrom 0.06188R18TM101 = R18TM1013 NOT R18TM1015//size up narrow spaces and fill them up inside largepolygonsR18TM1021 = EXTERNAL R18TM101 <0.495 REGION OPPOSITESPACE PARALLEL ONLYR18TM10211 = R18TM1021 INSIDE R10TM1R18TM10212 = INTERNAL R18TM10211 <0.375 REGION OPPOSITEPARALLEL ONLYR18TM10213 = SIZE R18TM10212 by 0.12R18TM10214 = R18TM10211 NOT R18TM10212 //for sizes>=0.375 <0.5R18TM10215 = SIZE R18TM10212 BY 0.06R18TM10221 = R18TM10213 or R18TM10215R18TM102 = R18TM101 or T18TM10221//merge small spaces <=0.495 with adjacent smallpolygons <0.495R18TM1031 = EXTERNAL R18TM102 <0.495 REGION OPPOSITESPACE PARALLEL ONLYR18TM1032 = INTERNAL R18TM102 <0.495 REGION OPPOSITEPARALLEL ONLYR18TM1033 = R18TM1031 TOUCH R18TM1032R18TM1034 = AREA R18TM1033 >=.25 //make sure overlap is>=0.5R18TM1035 = R18TM102 or R18TM1034//remove small notchesR18TM1036 = EXTERNAL R18TM1035 <=0.375 REGION OPPOSITENOTCH PARALLELONLYR18TM103 = R18TM1035 OR R18TM1036//merge small spaces <=0.375R18TM1041 = EXTERNAL R18TM103 <=0.375 REGION OPPOSITESPACE PARALLEL ONLYR18TM1042 = ARE R18TM1041 >=0.140625 //round offfrom 0.140625R18TM1043 = R18TM103 OR R18TM1042//and small holes <0.4375 (number from CS34 0.7)R18TM10441 = HOLES R18TM1043R18TM10442 = INTERNAL R18TM10441 <0.437 REGION OPPOSITEPARALLEL ONLYR18TM104 = R18TM1043 OR R18TM10442 //taking out allholes <0.5//selectively bias isolated 0.495�0.495 polygons by0.035/side (round off from 0.03125)R18TM1051 = INTERNAL R18TM104 <=0.495 REGION OPPOSITEPARALLEL ONLYR18TM1052 = AREA R18TM1051 =<0.246 //round up from0.24503R18TM1053 = R18TM104 NOT R18TM1052 //rest of polygonsR18TM1054 = R18TM1052 NOT TOUCH R18TM1053 //not touchother polygonsR18TM1055 = SIZE R18TM1054 BY 0.035 //round up from0.03125R18TM105 = R18TM104 or R18TM1055//global fracture bias of -0.025/sideR18TM106 = SIZE R18TM105 BY -0.025//final R18 outputR18 = AND BLOCK R18TM106R1837 { AND BLOCK R18TM106______________________________________
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BSG ratings rock!
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February 8 2009, 10:08 PM
Temis the Vorta
Fleet Admiral
Location: Tatoinne
Re: BSG ratings rock!
Given that, and the generally abysmal SciFi ratings, getting anything near last season's numbers is a win.
Yes, the way TV is going, just holding decently steady is respectable. It's not really the bad economy that's driving ratings down across the board - this has been a problem for a while now.
Also, we have no idea what
) costs to make. Without that number, we can't interpret what ratings actually mean for the ongoing survival of the show or future shows.
Seeing that a show is often downloaded off the internet or is DVRed typically makes marketers look at other time periods and ignore that as a possible choice for ad buys.
They still have the "real" numbers (the Nielsons - sorry folks, those are the only real numbers) to look at. I doubt marketers gvie a shit about bitorrent numbers either for good or ill. It's just an indicator that a show is popular, and means nothing in business terms. And DVR numbers are worth something, because some DVR users watch ads, strange but true. Also, for shows that are based in the real life modern world, DVR numbers can be worth something for product placement value.
ratings were never relevant to BSG's fate. The whole ratings obsession is just weird
They can't be horrible, or the show will get cancelled. As long as they are reasonable, they don't need to rock the house. The show stays alive,
has a shot and we can watch something decent on Skiffy and not idiotic monster movies and comical "reality" shows about ghosts.
Some people like to reward shows that they love as a way of getting studios to produce more shows of that nature.
I wouldn't put much hope on that as a significant factor. The way
has stayed alive and
will hopefully stay alive is by going well enough among US-based Nielson households to pay the bills - which means the other part of the equation, keeping costs down, is just as important as those Nielsons.
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This Kelsyus Horseshoe Set features solid steel shoes and stakes with rust-proof coating and solid steel 24" stakes. The stakes un-screw for compact storage.
Number of Pieces in Set: 6
Includes: Stakes, Carrying Case, Horseshoes
Features: Portable
Skill Level: Beginner
Number of Players: 2 or More Players
Material: Cast Iron, Steel
Frame Material: Steel
Manufacturer's Suggested Age: 18 Years and Up
Care and Cleaning: Wipe Clean With a Damp Cloth
Dimensions: 6.5 " L x 1.0 " W x 7.5 " H
Weight: 12.8 Lb.
Warranty Description: Replacement Parts Available
Battery: no battery used
Assembly Details: assembly required, no tools needed
other Info.
Warranty Information
To obtain a copy of the manufacturer's warranty for this item, please call Target Guest Services at 1-800-591-3869.
- Online Item #: 14315510
- Store Item Number (DPCI): 091-16-1081
- Item can be gift wrapped.
- Imported


text:
Fundamental Advisors is a leading alternative asset manager dedicated to the municipal markets. Founded in 2007 as a private equity firm focused on revitalizing distressed assets, Fundamental now offers a range of investment vehicles that capitalize on the growing opportunity set in the municipal market.
With decades of experience in the municipal markets and a senior management team that previously held top positions at the leading financial institutions in the space, the expertise at Fundamental is unparalleled. This best-in-class team allows Fundamental to be one of the only alternative asset managers focusing exclusively on distressed and special situations tied to the municipal market.
Judge Strikes Down Puerto Rico's Debt Restructuring Law
February 8, 2015 | DealBook
Investors in billions of dollars of Puerto Rico bonds secured a major legal victory when a federal judge ruled that the commonwealth's recently enacted debt-restructuring law was unconstitutional.


text:
The Big Picture: The New Testament and the Mission of God from Calvin Seminary on Vimeo.
SARAH BRUSCO – Make Your home inside my heart
To find out more about Sarah's inspiring work, visit: Morning & Night Music.
In 1992, Bob Sorge, pastor and renowned worship leader at the time, loses his voice after an operation to remove an ulcer from his throat… When "why me? why now" doesn't cut it…
The Watches of the Night
Free The Dancers Forum
"Soften our hearts…"
by Jennifer Goodson
Relationships come and go . . .
We've heard this said so many times and there is truth in it. However, how many of those relationships were ended because our flesh was offended in a way that brought in a wall of unforgiveness? Being a human is tough enough, being a woman seems to be even more so. Nevertheless, for God to ask us to walk in love towards another person who has wronged us . . .
How many questions have we listed on our 'secret notepad' to ask God in heaven?
We toss relationships so easily in a minimal way in the words of 'what doesn't kill me makes me stronger'? To be honest, strength is a good God characteristic; but when not balanced with the love of God we lose our gentleness towards others killing our reflection of Christ. The question then rises . . . How tough do we want to be; tough enough that we miss God's leading in areas that exemplify His love.
Yes, there are those relationships God does direct us to end because they are unhealthy. Then there are those relationships that we need strong Godly boundaries in order that God's hand can be in the midst. However, how many relationships did we deny, shove out of the way, cut off with a sliver blade in the name of God when in fact it was our offense, our fear, our past hurts that caused us to walk away and in some cases run.
There is a fine line in knowing
which relationships are God given gifts;
which ones are God assignments;
which ones are God given to strengthen us.
As women, we tend to run our lives by emotions if we are not living in the spirit of God. This causes us to compare, judge, accuse, and make assumptions of others. Why do we do this . . . because we are a vessel that lives in a spiritual and natural world that ultimately is directed orchestrated by our choices – our responses.
When we are living in the spirit, (our goal), we make Godly choices producing Godly responses that lead to Godly relationships. Likewise, when we are living out of our flesh, (our emotions), we allow our choices and responses to lead us into areas of fear and doubt which in turn opens the door for offense. In some cases leading us to isolation or areas of control and manipulation.
"Like a Warrior She Rises"
VIDEO: What will it take for you to love God?
with Rolland Baker of Iris Ministries Global
CALLING YOU HOME – Alberto Rivera
"Life from the dead could be describing a time nearly upon us, when the body of Messiah will be utterly captivated by the beauty and holiness of Yeshua; when the church will be given a revived spirit to love God with all her heart, soul and strength; when intimacy with God will be the believer's crown, and purity and power will be the jewels; when compassion and kindness, healing and humility will characterize Messianic believers. Will this end-time revival be catalyzed by a mighty army of on-fire Jewish prophets and evangelists, spiritual shock-troops preaching the holiness and compassion of God to men and women across this planet?"
Avner Boskey : Israel – The Key to World Revival
Nine Models of Intercessory Prayer For Israel
- Moses (Exod.32:11-13, 32; Deut.9:18-19, 25-29; Num. 14:13-19)
- Solomon (1 Ki.8:46-53; cf. Deut.30:1-10; 2 Chron. 20:5-12)
- Nehemiah (Neh. 1:4-11)
- Asaph and the sons of Korah (Psa.74; 79; 80; 83; 44; 85; 123)
- Joel (Joel 1:8, 13-14; 2:12-17)
- Isaiah (Isa.63:15 through 64:12; 58:1; 62:1,6)
- Jeremiah (Jer.14:7-9,17-22; 15:5; 9:1; Lam.33:43-51; 5:19-22)
- Daniel (Dan.9:1-19)
- Paul (Romans 9:3-5; 10:1)
VIDEO – The Father Heart of God
DISCLAIMER: I believe the Canon of Scriptures as we have them today is necessary and inspired. I'm basically exploring how the early disciples lived their faith and what texts they used as basis to teach and make disciples. And what we can learn from it.
How many times have we heard the longing expressed for a return to the power and simplicity of the Early Church? What gave them this experience and reputation we so envy? Is it possible we are missing something as to where they drew their "doctrine" from? I am becoming more and more convinced that it is the case.
Even Paul in his writings was basically unpacking the massive prophetic legacy contained in the Law and the Prophets, the Torah and the Tanakh. Just as Jesus did for the disciples on the road to Emmaus in Luke 24. Just as the Bereans did after hearing the Gospel preached to them – they went back to the Hebrew Scriptures of their day. Just as Peter preached on the day of Pentecost. Just as Steven did before being martyred. And so on.
Now, tradition tells us that the first book of the New Testament was written "around" 50 AD. That would be close to 20 years after Jesus' ascension. Yet, merely 50 days after his ascension the first revival broke in Jerusalem. The Church was born then. Not in 325 AD. Under the power of the Spirit, not under the authority of Constantine. Their Scriptures? Torah and Tanakh. And these are the ones of whom it is said they loved one another so much they shared their wealth, and acted like Christ so much that they were called "Christians."
So what happened? Have we seen over the centuries the rise of a doctrine born of the New Testament rather than the Old? Indeed we have. There has been a clear Hellenization of Yeshua, the stripping of the Jewish roots of our Messiah, and therefore we ended up with a religious mixture called Christianity, based almost solely on the Canon of the New Testament. History recorded the extreme abominations the Church drew the world into. So completely different from the teachings of Yeshua and the Apostles. Continue reading


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Neato Knows
The minds behind the Neato Robotic Vacuum understand that life is full of unanticipated messes. Well…unanticipated by you. They know they're coming and they're ready for them. In their edgy new ad campaign, Neato identifies five different situations where you'll need a quick cleanup, one you probably won't want to deal with on your own. In situations like these, you'll ...Read More »
Do You Play Online Games? Then You Would Love This
It's hard to look for decent, online, in-browser games nowadays. This is where Poki comes in. Poki is your one-stop-shop for all things fun and games but without a price tag. For game buffs who don't want the hassle of downloading apps or software, then this is where it's at. Games by Poki are all free and can be played ...Read More »
Runtastic Premium: Makes Sports Funatstic
What's Runtastic? In essence, Runtastic is nothing new – it's an app made for health and fitness buffs who want to track their performance. But what makes this app stand out is the fact that it's a feature-rich app that really wants you to succeed and achieve your fitness goals. Runtastic actually offers different kinds of free (basic) and paid ...Read More »


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Julianne Phillips
|This article relies largely or entirely upon a single source. (November 2011)
|Julianne Phillips
Julianne Phillips on the red carpet at the 1994 Emmy Awards
May 6, 1960
Chicago, Illinois, U.S.
|Model, actress
|Bruce Springsteen (1985-89; divorced)
Julianne Phillips (born May 6, 1960[1]) is an American model and actress. She is the ex-wife of Bruce Springsteen.
Born in Chicago, Illinois[2] and raised in Lake Oswego, Oregon.[1] Her parents are William Phillips, an insurance broker, and his wife, Ann.[1] Julianne was the youngest of six children in a Roman Catholic family.[1] Phillips is a graduate of Lake Oswego High School and Brooks College. [3]
Early career[edit]
She began work as a model in Manhattan in the early 1980s. By 1982 she was represented by the Elite Modeling Agency, which characterized her as a "perfect ten package," earning as much as $2,000 a day.[1] She then moved to Los Angeles, where she appeared in a .38 Special music video.[1] This led to her first notable acting roles, in 1984's made-for-TV movies Summer Fantasy and the Robert Urich vehicle His Mistress.[1] She also appears at the end of the Bruce Springsteen music video "Glory Days".
Marriage and divorce[edit]
Phillips ultimately became best known for being the girlfriend, and later the first wife, of musician Bruce Springsteen. Phillips met him in October 1984,[1] and they were married in Lake Oswego, Oregon on May 13, 1985,[1] surrounded by intense media attention.[1]
The marriage did not endure. Springsteen's 1987 album Tunnel of Love described some of his unhappiness in the relationship. During the subsequent Tunnel of Love Express Tour, Springsteen took up with backup singer and fellow New Jersey resident Patti Scialfa. The couple's breakup is perceived to have inspired several Springsteen songs, including most notably "Light of Day", which Springsteen wrote for the film of the same name.
Acting Career[edit]
Phillips continued her acting career during and after the marriage. She appeared opposite Chevy Chase in Fletch Lives and John Ritter in Skin Deep, both in 1989. Two years later she began the role of Frankie Reed, the business-oriented character on the popular television drama, Sisters, in which she played until 1995; it became her best-known role. She left the show one season before it concluded its run (but did appear in the series finale).
Post 1997[edit]
Phillips has not acted in either television or film roles since 1997. She resides in Los Angeles. According to a USA Today profile in 2006, she spent time in Toronto, Ontario, Canada, and El Salvador.[citation needed]
- ^ a b c d e f g h i j Dave Marsh, Glory Days: Bruce Springsteen in the 1980s, Pantheon Books, 1987; ISBN 0-394-54668-7. pp. 303, 316-18.
- ^ For now, per reliance on Talk:Julianne Phillips.
- ^ [1], people.com; accessed October 29, 2014.
External links[edit]
- Julianne Phillips at the Internet Movie Database
- Julianne Phillips profile, NNDb.com; accessed October 29, 2014.


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Michael Weidrich
Founder/Coordinator, 1st Friday: Albany
Monthly Archive for August, 2009
Scientific Maps
LarkFEST Chronicles- Day 4 Next up on the Townsend Park Stage: Scientific Maps A four piece (and oftentimes two-piece) band from Albany, N.Y. with songs reflecting influences as varied as the supernatural and crypto-zoological to British invasion to Sherlock Holmes to Elephant 6 and then back to the supernatural. "Smith's tweaking of conventions belies a […] [Read More]
We Are Jeneric
LarkFEST Chronicles- Day 3 Next up on the Townsend Park Stage: We Are Jeneric Songs by lovers, from the funeral parlor of a haunted house. Musicians Jen and Eric collaborated for four years without nomenclature until one of their friends dubbed them "Jeneric" (get it?). After moving to Thailand in 2005, Jen and Eric got […] [Read More]
Matthew Loiacono
The LarkFEST Chronicles. Day 2. Next up on the Townsend Park Stage….. Matthew Loiacono Performing original and adapted / rearranged music in the moment on mandolin, banjo, acoustic & electric guitars, drums, percussion and much more, Matthew is mildly obsessed with marrying traditional instruments to modern technology and sounds. Known to utilize live on-the-fly […] [Read More]
Barons in the Attic
In anticipation of LarkFEST, I will be spotlighting all the performers for this year's event. We have so much talent coming to Lark Street for the day to share their music with us. So lets find out a little bit more about our LarkFEST performers…… Appearing on the Townsend Park Stage (corner of Washington & […] [Read More]
1st Friday 3rd Anniversary
September 4th marks the 3rd Anniversary of Albany's 1st Friday. I can't believe this little art night that started with just 3 galleries in the Lark Street neighborhood has grown to become a huge city-wide arts celebration. I was adding up some numbers the other day and was a little surprised with what I came […] [Read More]
LarkFEST- An All-America City Event
In less than 6 weeks, thousands of people will descend upon Lark Street for the largest one-day street festival in NYS. Last year, we had approximately 80,000 people attend the event. This year looks to be even bigger! As usual, WEQX does not disappoint by bringing in top notch talent to perform on the Main Stages […] [Read More]
LarkFEST is coming…..
Yep, it's almost that time of year again. LarkFEST. It's only 6 weeks away. September 19th. I know we say every year is going to be bigger than the last, but I really think we're going to out do ourselves on this one. Next Tuesday, 8/11, we will be announcing our line-up for the event […] [Read More]
Albany – The Upstate Culture Capital
Another 1st Friday is almost upon us. It amazes me how this event continues to grow and expand. It seems like every month we're welcoming someone new to our 1st Friday family. Like a garden, Albany has been a rich and fertile community to grow the arts in. It doesn't happen over night. Sometimes the […] [Read More]


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My DH and I are looking at options for my working at home when Peanut comes. Not sure exactly what we will do yet. I still have some unanswered questions from my current job. Anybody in this group a SAHM that works (at night or from home)?
SAHM + job ideas?
*~*DD born May 12, 2011*~*
*~*DS born September 2, 2014*~*
Comments (5)
I'm trying out the blogging thing. I've been at home with Conway since he was born, and it is great but I'm sick of not having my own money. Sure, I don't really know what I'm doing but with time and practice, I hear it can be pretty darn successful.
Conway 11/17/09
You could start your own business - either through something like network/direct marketing (think Avon, Amway, etc.) or freelancing doing something you're good at. You could become a virtual assistant or something similar.
USMC wife to Mr. Wonderful since 10-17-08
Munchies�12-11-09� LOVE
I've looked into a lot of things but I think avon, secret shopper, and telemarketing are probably the most popular.
I've had some clients that started their own websites.
UC'ing SAHM to Stacy 4/09, Zinnia 7/13
Anti: circ, vax. Pro: cooking, cosleep, cd
*Bronze (@)(@)*
Fave Shopping: Sweetbottoms Baby Boutique
I got certified to teach group fitness, and I teach a few classes a week. Gets me some workouts and some cash.
I am a marketing executive for a non MLM company that has been in business for over 25 years that focuses on wellness and has a great line of better safer more cost effective products that we all use every day. I love that I can stay home with my three kids and be able to work around my schedule and not interfer with all the activities that comes with three kids. I make my own schedule!
I love my job because I dont have to sell anything, do parties, take orders, and I didnt have to spend a ton to get my account started and start working.
It has helped supplement our families income and been a great blessing. The best part is that there is NO risk and it is very reliable and legit. you dont find that too much these day.


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This simple doily and watercolor art for preschoolers uses basic art materials and encourages children to explore the medium of watercolors through process-based creating. This project, like so many others that you'll find on TinkerLab, is process-based. It's set up as a Creative Invitation, meaning that the materials are laid out in an inviting way, and then the child … [Read more...]
Toddler Watercolor Painting, Keeping it Neat
I'm not afraid of messes, but I'm also not looking for them. Are you with me? So when my almost 2-year old said that she wanted to paint, I was ready with my spill-management toolbox: an ice cube tray and a wooden serving tray. In case you're wondering how the wooden tray is paint-free (I'd wonder about that), it's seen better days and was just treated to a new paint job … [Read more...]
Sticker Resist with Watercolors
Do you have a set of watercolors? If not, this fun project will give you reason to pick one up. My kids and I have been keeping sketchbooks for a few months, and we enjoy the challenge of testing out new techniques, materials, and ideas as we move through our books. Painting over stickers (and then peeling them back) presents children with the opportunity to learn about … [Read more...]
Straw-blown Watercolor Painting
Oh, how I love an art project with unexpected results. We took your usual watercolor painting activity and added some straws to create this loopy, drippy beautiful mess. The fun was in trying to control the flow of paint with the droppers and straws, which was near impossible, but totally worth a try. Note: This post contains affiliate links for your … [Read more...]
Coffee Filter Flowers
We recently started using a Chemex coffee pot (next to Blue Bottle, it makes the BEST coffee ever -- anyone else with me?) and we had a stack of old filters collecting dust, waiting to be repurposed into watercolor coffee filter flowers! I mixed a little water to liquid watercolors, and added droppers. You could also use food coloring and scavenge droppers from old … [Read more...]


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In June, the U.S. Department of Energy (DOE), Washington, D.C., sent Congress a report that highlights various issues that keep industry from achieving better energy efficiency. "Barriers to Industrial Energy Efficiency" also pinpoints opportunities to address many of these factors. The report and the study that underpins it were prepared in response to Section 7 of the American Energy Manufacturing Technical Corrections Act; it directs the Secretary of Energy to conduct a study, in coordination with industry and other stakeholders, of barriers to better industrial energy efficiency. The report examines three areas that could improve industrial energy efficiency:•…Full Story
Cover Story: Alarm Management: Pick the Real Culprit
A recent international alarm management standard is ratcheting up pressure for improvement


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Certain things can be overwhelming in your wife's daily life. Find out what they are and how you can help protect her from them. read more
Charisma Magazine
Page 52 of 97
10 Ways to Be a Man of Integrity
Are you honest, true, noble, trustworthy, kind and selfless? Discover other ways you can build godly character. read more
Promise Keepers Keeping Its Promise to Disciple Men
America needs Christian men to stand up and be bold for the gospel. Find out how Promise Keepers is fueling the fire. read more
How a Christian Can Conquer Unbelief
Are you completely trusting in the Lord? Discover what good things can happen if you give your problems to God. read more
How to Balance Strength and Vulnerability in Your Marriage
Most husbands have no problem showing their wives how strong they can be. But find out why she needs to see your godly, meek side as well. read more
5 Summer Project Ideas for Dads and Kids
Have you found yourself suffering from boredom this summer? Here are some great ideas on how to get involved and spend time with your children in the process. read more
How to Strike Your Arrows
Do you ever wonder how passivity subtly creeps in until life becomes dull? Find out how to avoid it. read more
How to Eliminate the Cancerous Emotion of Anger
All men will be triggered and experience anger. But find out why receiving, indulging, retaining and expressing it is a choice. read more
How to Find Your Fathering Comfort Zone
Find out how you can embrace your important role as a father and find your comfort zone there. read more
Patriotism and Faith Go Hand in Hand
We might show our patriotism to our country on Independence Day, but read and find out why we should show our patriotism to God like we should every day. read more
Faith Comes by Hearing
Get quality Christian content in a variety of programs including news, leadership, inspiring stories, women's topics, sports, and even more.
A Surprising Prophetic Word About the Supreme Court Same-Sex Marriage Ruling
While many prophetic voices are declaring judgment, God spoke these words to one ...
33 Things the Holy Spirit Does
Though many Christians overlook the importance of the Holy Spirit, Scripture is clear about not only His vital role, but also His divine actions.
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10 Texts to Send To Your Husbands in the Next 10 Days
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Get quality Christian content in a variety of programs including news, leadership, inspiring stories, women's topics, sports, and even more.
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Could the Supreme Court Ruling Spark an Awakening?
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text:
Molasses Spice Loaf
16 Oct 2010
|Unsifted all purpose flour
|2 Cup (32 tbs)
|Baking soda
|1 Teaspoon
|Baking powder
|1 Teaspoon
|3⁄4 Teaspoon
|Mixed pastry spice
|1 1⁄2 Teaspoon
|Brown sugar
|1⁄3 Cup (5.33 tbs)
|Boiling water
|1 1⁄4 Cup (20 tbs)
|1 Cup (16 tbs)
|Salad oil
|2 Tablespoon
|1 , beaten
|Fancy molasses
|1⁄3 Cup (5.33 tbs)
Sift the first five ingredients into a bowl and stir in the sugar.
Pour boiling water over the raisins and let cool.
Stir in oil, egg and molasses.
Pour into the dry mixture and blend thoroughly without beating.
Scrape into a greased 9 X 5-inch loaf pan and bake at 350F for 40 to 50 minutes.
Cool and remove from the pan.
Rate It
0 Comments
Molasses Spice Loaf Recipe


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Hang tight!
Recipe by MISSTHIS
"Living in a house of two, I'm constantly looking for ways to use up my fresh produce. I have little frozen tart shells in my freezer at all times. They are great for canapes, desserts, and anything you can think of!"
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15 (2 inch)
frozen, miniature pastry shells
1 (10.75 ounce) can
cream of chicken soup
1/4 cup
hot chile pepper, seeded and minced
1 dash
Worcestershire sauce
1 dash
hot sauce
salt and ground black pepper to taste
2 tablespoons
extra-virgin olive oil
2 cloves
garlic, minced
1/4 cup
finely chopped sweet onion
1/4 cup
chopped red bell pepper
3/4 cup
chopped asparagus
1/2 cup
grated Parmesan
1/4 cup
chopped flat-leaf parsley
Absolutely Devine!! I did not have any sweet onions, I used a finely chopped yellow onion and it still turned out very nice :)
I made it for a party, and there were a few left over. I ate them the day after cold - nice :)
I followed the recipe exactly and they were delicious! I made them for an all girl party to celebrate my sister finishing chemo therapy. Everyone loved them and they were gone in a flash!
7 Ratings
I had high hopes for this but we were disappointed in the end. They look pretty but the taste is just not quite there. The flavor of the soup was too prevalent. I also think they need something to thicken them a bit to improve the texture. As it was they were a bit too "soupy" all the way around for our taste.
Even though these are always the first things to disappear on the buffet these tarts are too good and to easy to save for company. Wonderful in the extreme. Close your eyes and savor the flavor. Yummy!
I took these to a party and they were a hit. I didn't have asparagus, so I used broccoli. After reading reviews about this being soupy, I added 2 eggs to the mix and they were perfect.
* Percent Daily Values are based on a 2,000 calorie diet.
Ashley's Savory Summer Veggie Tarts
Serving Size: 1/15 of a recipe
Servings Per Recipe: 15
Amount Per Serving
** Calories: 181
** Calories from Fat: 93
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See how to make summer squash stuffed with sausage and goat cheese.


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Panther in the Basement (Paperback)
|Author: Amos/ De Lange Oz
|Translator: N. R. M. de Lange
(Save 25%)
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CONDITION: Brand New
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Learn more about Panther in the Basement:
Format: Paperback
Publisher: Lightning Source Inc
Sku: 30359870
Publish Date: 4/10/2007
Dimensions: (in Inches) 8H x 5.25L x 0.75T
Pages: 160
See more in Literary
|Oz revisits here the Jerusalem of his childhood in the last days of the British mandate in Palestine. Our hero's name is Proffy (short for Professor), and he is twelve years old, his head filled with dreams of dying heroically in battle. Together with his friends Ben Hur and Chita, he spends the summer of 1947 as a member of a make-believe underground movement fighting the British. Indoctrinated by his patriotic father and his zealous Bible teacher, Proffy becomes "an excited panther in the basement, seething with oaths and vows, knowing exactly...to what he will dedicate his life, for what he will sacrifice it when the moment of truth comes". But when his comrades accuse him of treason for his friendship with Sergeant Dunlop - a fat, good-natured British soldier who revels in the Bible and shares with him the love of language - Proffy must vindicate himself in the eyes of his family and friends.
From the Publisher:
A twelve-year-old boy dreams of fighting and dying heroically as part of an imaginary underground movement fighting English soldiers in Palestine during the British mandate
Author Bio
Born Amos Klausner, Oz was raised in Jerusalem and attended an Orthodox Jewish school. Rebelling against his conservative and domineering scholar-father, he left home at 14, changed his name, and joined a kibbutz, where he espoused the leftist politics of David Ben-Gurion. He served in the Israeli army and studied at Hebrew University in Jerusalem, becoming skilled as a writer and teaching English and literature in the kibbutz school. His novels are rooted in Israeli society, and he is both a fearless innovator and a realist, always deeply involved in Israel's politics and struggle for survival.
New York Times Book Review
"[A]n insightful, inventive and lyrical expression of this writer's forbearing vision of life under the aspect of mortality. Its effect is not that of a powerful, steady torrent, as in some of Oz's other novels, but that of an intermittently fine, stinging rain." - Lee Siegel 10/26/1997
"[A]n insightful, inventive and lyrical expression of this writer's forbearing vision of life under the aspect of mortality. Its effect is not that of a powerful, steady torrent, as in some of Oz's other novels, but that of an intermittently fine, stinging rain." - Lee Siegel 10/26/1997


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Dr. Terry Mah's Ratings
Dr Mah is an outstanding Dentist. He excels at his job!!! Dr Mah is so friendly and welcoming. His staff is amazing. I would never trust any other Dentist with my teeth and will never go anywhere else!
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Dr. Mah is an excellent dentist, truly the best around. I would not hesitate recommending him to anyone. He's been my dentist for 25 years and now my children see him too. I trust Dr. Mah and his office for all my dental needs.
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I have been going to Terry for over 20 years. I am the worse 'white knuckle' patient and takes his time and will continually ask me if he needs to stop for a minute for me to compose myself. I keep telling him he cannot retire ever!!
Was this rating useful? 0 [[ userState['ratings'][2778039].votes_count ]]
DR MAH is honestly the best dentist! I have been very unhappy with a lot of dentists in the past because of their lack of knowledge and poor demenor. Dr mah made me feel very welcomed and explained my treatment very well. I am glad I have finally found a dentist I can trust and be friends with. Dr mah your the best and your staff is just as good!!!
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I've been to Dr. Mah's office a few times now and what I've noticed is that his entire staff is extremely friendly and professional.
I've had a tooth extraction and even a root canal done and I've felt ZERO pain after my procedures. It's amazing!
Dr Mah is awesome!
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I came here for my first visit today.
The staff is extremely friendly, quick and professional. Dr.Mah is really nice and REALLY knows his stuff.I will definitely come back here again!
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Awesome dentist. Very personable & caring. Great hygienist, especially the hot looking guy. His style is very gentle & he is pleasing on the eyes. He spent an hour on me & I wish the appointment was longer. Took his time to explain things to me. I'm definitely keeping my hygienist & dentist.
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Office was very clean, staff very friendly and efficient . I was very impressed with dr mah and the procedure he did to repair my broken tooth. I would recommend this office to anyone.
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I've been a patient of Dr Mah for 25 years. He's the best. Great staff, awesome service.
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Terry Mah an okay dentist. Polite knowledgeable .but dicede never more put my feat in his office after his hygienist was rude with me. She treat horrible . Pull my lips and hurt me. Was unbelievable never see this in my life .pay to be assaulted. besides it , he put some stuff my insurance bill that I really don't understand ....anyways. dentist okay. Receptionists amazing nice and friendly hygienist crazy monster.. Need find another dental clinic
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Here is the link to access the Creative Cities project.
Choose your city carefully!
Here is the link to access the Creative Cities project.
Choose your city carefully!
I'm a teacher, of course I'm a big believer in learning new things!
But really, more than that, I really do love to learn new things. I think the world is an interesting place and there are so many new things to learn about. I was very interested in astronomy a few years ago. I love history. I'm always interested in learning new things about new technologies.
What about you? What are you interested in? What are you learning about or what would you like to be learning about?
Here is the link that you need for the Netvibes subscription.
How would you like a whole computer for just $35?
Sounds to be good to be true doesn't it? But that fact is that the Raspberry Pi computers are an entire computer for just $35. You need to add your own mouse, keyboard and monitor, but a lot of people have those around their house.
Raspberry Pi's were invented to help teach kids to program computers. Most people know how to run computers, but not very many people know how to actually program them and make them do what they want. This is actually too bad because there are unlimited numbers of cool things that you can do with a little programming knowledge.
We have one Raspberry Pi running in the classroom right now and I'm going to set up at least one more (as soon as I can figure out where to put it….)
There's a lot of cool stuff on their website and a lot of stuff online that people have done with these little machines. Just Google it up and see some of the cool projects people are doing.
This school year is going to be busy and interesting.
So much of what we do is about your questions and about your ideas.
This is not a classroom filled with worksheets and spelling tests, but it is one where I expect you to think deeply and carefully about a lot of different issues to try to build up your place in the world.


text:
By John Grabski - September 27, 2004
A ¾ view, showing the stockiness of the copper heatsinks.
This card sports an original
heatsink/fan setup which Gainward calls "2 Slot". In some systems, this card
would take up the first PCI slot, but in the review motherboard (Abit KV8-MAX3)
it does not take up any, as the first PCI slot is spaced a bit farther out than
most motherboards. US card enthusiasts wanting a single slot solutions for their
SFF pc's need not worry, however, as the US market version of this card is
merely a single slot solution using the same PCB.
I guess I'm lucky, none of my PCI slots have been taken.
Next Page: Test System, UT2K4, Doom3, SS:SE
Last Updated on September 27, 2004