text:
No, that won't be an April Fool's Day prank by The New York Times. I'm told that, on April 1st, the Grey Lady is planning to drop its Monday-through-Friday stock listings and to replace them with some kind of new web access. In the paper will be a very limited 1 1/2 pages, trimming those thousands of stock tables to just hundreds. Plans are being finalized what to do on the weekends. Newspaper industry sources tell me that this could represent a $10 million savings to the NYT in newsprint costs and editorial space: "The way for papers to save money short of getting rid of people is to get rid of stock pages." For years, the nation's 900+ newspapers have run the AP's stock tables, so the trend is going to hurt non-profit AP's revenues. In the past month alone, the Atlanta Journal-Constitution, Chicago Tribune, Newsday, and the Denver Post are just some of the papers that have eliminated their stock listings. But the NYT is the biggest newspaper yet to follow the trend: after the Grey Lady, comes le deluge. Could it be possible that the Wall Street Journal is next? Speaking of the WSJ, I'm told to expect another round of staff cuts through layoffs and attrition.
April Fool's: No NYT Stocks
by Nikki Finke
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41 year old woman | Littleton, CO, USA | Seeking men 35-50 within 20 miles
I don't like headlines.
I recently perfected walking and chewing gum at the same time, took years of practice but it was worth it. I enjoy repeatedly lifting heavy objects... if I have to translate you can stop reading here... I love the gym, I am there most days. You don't need to be cut or shredded, but you need to know your way around the weight room... If I can curl more than you it's a deal breaker. Oh, by the way, if you tell me you are Mr. Sensitive, a good listener, into philosophy, Pilates and a vegetarian, I will puke. I don't want to puke, I just ate. You are a man, you think about one thing, how to get it, when to get it and where to get it. All women know that, you're not fooling any of us. Obviously, I need sarcasm, goofiness, and a strong, smartass personality to keep up with me! :-) I like the gym, hiking, movies, camping, skiing, cooking, board games, poker, walking and chewing gum. I can go from tiling a bathroom floor to wearing heels and little black dress for a night out. I have kids who keep me busy as well, but you won't meet them anyway because you might be a psycho stalker. I like most kinds of music, live music at local bar is always fun. I also like a night in just relaxing and watching movies, almost anything from Tommy Boy to The Notebook... yup, you might have to watch a bunch of chick flicks, but we can watch Caddyshack, too... once... See, it's all about the give and take. I'm supposed to talk about my ambitions, too... not sure what other major task to tackle after that walking and chewing gum thing, that kind of exhausted me. I think I'll rest for a while.
Camping , Cooking , Movies/Videos , Music and concerts , Exploring new areas , Playing cards
Other types of exercise, Skiing, Walking / Hiking, Weights / Machines
I exercise 5 or more times per week.
Middle of the Road
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
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|5'6" (167cms)
|5'9" (175cms) to 6'10" (208cms)
|Body type:
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|No Way
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|Have kids:
|Yes, and they sometimes live at home (2)
|Yes, and they sometimes live at home, Yes, and they live away from home, Yes, and they live at home
|Wants kids:
|I'll tell you later
|No preference
|White / Caucasian
|No preference
|No preference
|Bachelors degree
|No preference

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Hundreds Turn Out for Florence A. De George Pavilion Groundbreaking
JUPITER - Officials and VIPs of Jupiter Medical Center celebrated the groundbreaking of The Florence A. De George Pavilion on Monday, March 18 with a ceremony and ice cream social that attracted hundreds from the community. The groundbreaking celebration, which was open to the public, including the Town of Jupiter's Mayor Karen Golonka and Lawrence F. De George, whose family's donation helped spearhead building the new facility.
"The groundbreaking celebration for the new Florence A. De George Pavilion at Jupiter Medical Center was a momentous occasion for us and for the surrounding community," said John D. Couris, President and CEO of Jupiter Medical Center. "Beginning this second phase of the Medical Center's three-phase expansion plan is another example of fulfilling our commitment to provide world-class healthcare to the residents of Northern Palm Beach County and beyond."
The new 81,000 square foot, three-story Pavilion will provide 44 new rooms and a dedicated floor to The Anderson Family Orthopedic & Spine Center, which will provide a seamless patient experience from surgery to recovery and rehab along with more than 15 private patient rooms, a family and staff lounge, gym, dining and direct access to existing surgery suites.
In addition, the new building will encompass an expanded Florence A. De George Children's and Women's Healthcare Services which will include an obstetrics unit with six labor rooms, 12 post-partum rooms and two operating rooms. The addition will boost the Medical Center's obstetrics capacity from the current 1,200 births annually to 2,000. The existing birthing suites will be converted to patient rooms.
The Florence A. De George Children's and Women's Healthcare Services will also incorporate the hospital's existing pediatric therapy services for children ages newborn to 17. Through this program, speech/language pathologists, and occupational and physical therapists provide specialized, comprehensive and individualized treatment to meet a child's particular ongoing healthcare issues. Treatment addresses a wide range of needs, from Attention Deficit Disorder and autism to neurological disorders, pediatric diabetes education and a new pediatric swallowing program, among many others.
The development of the Florence A. De George Pavilion was made possible by $10 million gift to the Jupiter Medical Center Foundation from The Lawrence J. and Florence A. De George Charitable Trust. The donation - the largest single donation in the hospital's history at the time - paved the way for Jupiter Medical Center (JMC) to advance children's and women's healthcare services in northern Palm Beach County.
To learn more about supporting this project, please contact the Jupiter Medical Center Foundation at (561) 263-5728 or email@example.com.
About Jupiter Medical Center
A not-for-profit 283-bed regional medical center consisting of 163 private acute care hospital beds and 120 long-term care, sub-acute rehabilitation and Hospice beds, Jupiter Medical Center provides a broad range of services with specialty concentrations in oncology, imaging, orthopedics & spine, digestive health, emergency services, lung & thoracic, women's health, weight management and men's health. Founded in 1979, the medical center has approximately 1,500 team members, 520 physicians and 700 volunteers. Jupiter Medical Center is the recipient of the HealthGrades 'America's 50 Best' Award™ for three years in a row (2011-2013) and the Distinguished Hospital Award - Clinical Excellence™ for nine years in a row (2005-2013). For more information on Jupiter Medical Center, please call (561) 263-2234 or visit http://www.jupitermed.com.
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I read a post this morning that warmed my heart! You all are so great and supportive..Hugs to you all!Mar 24 2012 06:40 AM
I read a post this morning that warmed my heart! You all are so great and supportive..Hugs to you all!Mar 24 2012 06:40 AM
This has not been the summer I had planned. Things come at you for a reason, it's up to you to roll with it, it has purpose.Jul 25 2011 04:09 PM
Today you may be asking "why me?" There is a reason and one day you will know : ) You may see only darkness, but there is always hope, even if you do not feel it...never give in or up..May 19 2011 03:32 PM
Even though I'm having reactions tonight(oo much fruit today)..it's a good day : ) It was so overwhelming in the beginning...It gets better!May 17 2011 03:57 PM
So, I want to tell off a co worker who has no compassion and has said neg. things about Celiac! She was like "Lays chips are gluten-free"! why aren;'t you eating them everyday! Well because that's junk food!!! Almost lost my religion! She acted like I should be so happy I can eat plain lays chips!! URGHJ!May 11 2011 04:36 PM
Another fuzzy headache : ( On the upside, I had an almost pain free day this past week!May 07 2011 08:08 AM
Endo scheduled for July...still having some painful days...my gastro said I had severe damage...that I had silent celiac for many years to have this damage....time..time...is my friend..hoping in time I can healMay 03 2011 04:45 PM
GFREEGURLDid you any symptoms of celiac disease before getting the diagnosis? I'm sorry you are still feeling pain. I have been gluten-free for two-three weeks now and still feeling tired, depressed at times, headaches and fat; on the good side (LOL), they are slowly dissipating with time. The weight is slowly coming off. I hope you do get better.
May 09 2011 02:48 PM
CarolinaKipI had some slight symptoms for years. Reflux, migraines, tummy problems. I started having diarrhea and more fatty stools, I lost a lot of weight, and then in Nov 08 I started having intense abdominal pain. It spread to side pain, so bad I ended up in the ER. I also had abdominal distention plus what I know know to be brain fog. I went through 7 months of doctors and many meds and testing to it to come down to a blood test and endo. I knew it was gastro related because every time I would eat t...
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Hong Kong Zoological and Botanical Gardens
Memorial Gate for British Chinese Soldiers
|Date opened
|Mid-levels, Victoria Peak, Hong Kong
|22°16′40.03″N 114°9′22.70″E / 22.2777861°N 114.1563056°ECoordinates: 22°16′40.03″N 114°9′22.70″E / 22.2777861°N 114.1563056°E
|Number of animals
The Hong Kong Zoological and Botanical Gardens (Chinese: 香港動植物公園) is one of the oldest zoological and botanical centres in the world. It occupies an area of 5.6 hectares at Mid-levels, on the northern slope of Victoria Peak in Hong Kong. Founded in 1871, its first stage had been opened to the public in 1864.[1]
Similar to Hong Kong Park, Hong Kong Zoological and Botanical Gardens provides a natural environment and atmosphere in Central District. It is bigger than Hong Kong Park and contains more plants, birds and facilities.
The park was previously named Bing Tau Fa Yuen (「兵頭花園」).[1] "Bing Tau" literally means "the head of the soldiers" or the "Commander-in-Chief". Some said it was named such way by the Chinese because it was once the private garden of the governor. Other said Bing Tau was just the phonetic transliteration of the first two syllables of the word botanical. In the old days, many lovers liked to go there on a date.
At the southern entrance to the gardens, at Upper Albert Road, is a memorial arch dedicated to the Chinese who died assisting the Allies during the two World Wars. The inscription on the lintel reads: "In Memory of the Chinese who died loyal to the Allied cause in the Wars of 1914-1918 and 1939-1945". The granite arch in the shape of a paifang was erected in 1928. Reference to the Second World War was added later.[2]
A bronze statue of King George VI was erected in commemoration of the 100th anniversary of British colonial rule over Hong Kong (1841–1941).[3]
There are more than 1,000 species of plants in the gardens,[4] mostly indigenous to tropical and sub-tropical regions. It includes some rare species like the Dawn Redwood and the local Ailanthus. Besides these, some species which can produce flowers throughout the year can also be found there, like the Hong Kong Orchid Tree.
Different Species are grown in the Thematic gardens in the Hong Kong Zoological and Botanical Gardens.
Bamboo Garden[edit]
This garden grows about 20 species from 7 genera of Bamboo family.
Camellia Garden[edit]
More than 30 species are grown in this garden. Crapnell's Camellia (Camellia crapnelliana), Grantham's Camellia (Camellia granthamiana) and Hong Kong Camellia (Camellia hongkongensis) are native to Hong Kong.
Some introduced rare species such as Yunnan Camellia (Camellia reticulata) and Golden Camellia (Camellia nitidissima & Camellia euphlebia) can also be found in this garden.
Magnolia Garden[edit]
This garden grows 5 species of Magnolia:
- Chinese Magnolia (Magnolia coco)
- Yulan (Magnolia denudata)
- Purple Magnolia (Magnolia liliiflora)
- Saucer Magnolia (Magnolia × soulangeana)
- Southern Magnolia (Magnolia grandiflora).
Various species of Orchids, Ferns, Bromeliads, Vines and Carnivorous Plants are grown in the Greenhouse.
Palm Garden[edit]
This garden grows over 30 species under 22 genera of the Palm family.
Bauhinia Garden[edit]
This garden grows 8 species including Hong Kong Orchid Tree (Bauhinia blakeana), Purple Camel's Foot (Bauhinia purpurea) and Camel's Foot Tree (Bauhinia variegata).
Azalea Garden[edit]
This garden grows over 10 Azalea species including Red Azalea (Rhododendron simsii), Lovely Azalea (Rhododendron pulchrum), Purple Azalea (Rhododendron pulchrum var. phoeniceum) and White Azalea (Rhododendron mucronatum), those are native to Hong Kong. There are also rare species such as Yellow Azalea (Rhododendron x molle) and Westland's Rhododendron (Rhododendron moulmainense).
Herb Garden[edit]
Various species of herb are grown in the garden.
Apart from the plants, there are over 600 birds, 70 mammals and 40 reptiles, including many different species.
Mammals and Reptiles[edit]
The size of the Garden precludes the keeping of very large mammal species such giraffes. Nevertheless the collection of primates is varied, including such diverse creatures such as golden lion tamarin, orangutan, ring-tailed lemur and black-and-white ruffed lemur. The reptiles are primarily snakes and turtles such as the Malaysian giant turtle, Chinese alligator and Burmese python.
Birds include the Red-crowned Crane, Flamingo and Peacock Pheasant.The small brick buildings that house some of the smaller birds were once staff quarters for Chinese workers at the park. These were recently renovated, resulting in the destruction of a row of disused Victorian gas lamp posts, probably the last remaining such row in Hong Kong, and possibly in East Asia.
The main entrance is located at Upper Albert Road. A number of bus routes give access to the facility.[5] Admission is free to all parts of the Zoological and Botanical Gardens.
See also[edit]
- Central and Western Heritage Trail
- King George V Memorial Park, Hong Kong
- List of urban public parks and gardens of Hong Kong
- ^ a b HKZBG website: Background
- ^ Lau, Ka-fai, Joseph, "Planning of interpretation strategy for Chinese style : 'Pai-type portal structure' before 1941 on Hong Kong Island", Dissertation, University of Hong Kong, September 2005
- ^ The Film Services Office: Hong Kong Zoological and Botanical Gardens
- ^ HKZBG website: Plants
- ^ "How to Access". Leisure & Cultural Services Department. Retrieved 2014-02-12.
External links[edit]
- Media related to Hong Kong Zoological and Botanical Gardens at Wikimedia Commons
- Official website


text: Puma presents Mad Decent Block Party 2012 - Mixed by Paul Devro by Mad Decent published on 2012/07/30 22:07:57 +0000 MAD DECENT BLOCK PARTY 2012 PRESENTED BY PUMA® DATES July 28 Toronto August 4 Philadelphia August 5 New York August 18 Chicago August 25 Los Angeles RSVP HERE: http://on.fb.me/MDBP2012 Mixed by Paul Devro https://www.facebook.com/djpauldevro Tracklist Major Lazer - Get Free feat. Amber Coffman (What So Not Remix) ZEDS DEAD - Crank Bonde Do Role - Bang (feat. Kool A.D.) Icky Blossoms - Babes Reptar - Please Don't Kill Me Zebra Katz - Ima Read (Paul Devro Remix) French Fries - Yo Vogue (Claude VonStroke Remix) El Coluplo Asesino- Toro (Toy Selectah Raverton Refix) Tanlines - All of Me DJ Sega - Angry Birds Jim-E Stack - Bubble Boy Joachim Garraud & Alesia - Hook (Clockwork Remix) Faux No - Velma Kelly 3 Loco feat. Diplo - We Are Farmers Theophilus London - Crew-York Action Bronson- Bird on a Wire ft. RiFF RAFF SpaceGhostPurrp - The Black God TNGHT - Higher Ground Flosstradamus - Rollup (Baauer Remix) Chrome Sparks - Marijuana Mr. Muthafuckin Exquire - Huzzah! Diplo Feat JAHAN LENN☮N - About That Life The ever expanding, incredibly successful and now two country expedition that is the MAD DECENT BLOCK PARTY, this year presented by PUMA®, will continue it's ascent to outdoor festival extravaganza takeover with 5 parties across North America this summer! Tearing through the USA and Canada with stops in Toronto, Philadelphia, New York, Chicago and Los Angeles, Diplo's Mad Decent is teaming up with sportslifestyle brand Puma to provide a full day of musical performances with FREE admission, the best local food and drinks, and tons of fun onsite activities for attendees of all ages! With over 40 thousand attendees last year alone,Mad Decent and Puma are bringing even bigger and better surprises to the masses this year including the PUMA Social Truck® where fans will be able to customize Mad Decent t-shirts and play ping-pong and foosball. Each block party event will feature unique lineups and surprise guests appearing in each city from the Mad Decent family and more. The block party tour kicks off this year on Saturday July 28th in the first ever stop in Toronto and concludes in Mad Decent's home town of Los Angeles on August 25th. Stay tuned for more details and lineups to be revealed in weeks to come! Heineken will be available to attendees 21+ with proper ID. Please enjoy responsibly. Mad Decent Block Party 2012 SPONSORS INCLUDE: Puma, Red Bull, Heineken, SPIN http://maddecentblockparty.com/ http://www.facebook.com/Maddecentblockparty http://www.puma.com/social


text:
The coupling agent dispenser serves to guide and, at the same, possibly to warm up the coupling agent, which is required for many medical examinations, directly during the examination from a reservoir to a diagnostic probe.
1. A mechanism for transporting a coupling agent useable for various medical examination such as ultrasonic and doppler examinations, the mechanism comprising:
a moveable probe;
a reservoir for holding a coupling agent;
a flexible hose having an inlet end adapted to be placed in communication with said reservoir and an outlet end in communication with said probe;
pumping means coupled to said reservoir and to said probe to pump coupling agent from said reservoir through said flexible hose to said probe for application to a patient;
control means adapted to work with said pumping means, said control means being positioned in said moveable probe, said control means for controlling the flow of coupling agent from said reservoir to said probe;
said pumping means providing transport of said coupling agent in solely one direction, from said reservoir to said probe;
flexible electrical cable means coupled to said probe, said flexible electrical cable means for providing information signals relevant to the examination; and
said flexible hose and said flexible electrical cable means being the sole physical constraint on movement on said moveable probe.
2. The mechanism of claim 1 and further including a heater at said flexible hose for heating said coupling agent as it passes through said flexible hose from said reservoir to said probe.
3. The mechanism of claim 1 wherein said control means is a valve capable of assuming an open state in which coupling agent flows through said hose from said reservoir to said probe or a closed state in which said coupling agent does not so flow.
4. The mechanism of claim 3 wherein said control means is a valve capable of assuming an open state in which coupling agent flows through said hose from said reservoir to said probe or a closed state in which said coupling agent does not so flow.
5. The mechanism of claim 1 wherein said pumping means includes a cartridge filled with compressed gas to pressurize said reservoir, said cartridge being in communication with said reservoir.
This application is a continuation of application Ser. No. 016,539, filed 2/19/87, and now abandoned.
The invention relates to a device, by means of which the ultrasound coupling agent, required for a series of medical examinations, such as ultrasonic examinations and Doppler examinations, can be transported from a reservoir to the diagnostic probe and, at the same time, also heated if necessary.
For said examinations, an area of a diagnostic probe, for example, the so-called sound head in the case of ultrasonic examinations, is brought into contact with the anatomically specified area above the part of the body to be examined. The diagnostic probe may also be brought into contact with an inanimate object. The oscillations employed for the examination, for example, ultrasound in the megahertz range in the case of ultrasonic examinations, are incapable of negotiating the air-filled gap that occurs between the ultrasonic probe and the surface of the body. For this reason, a coupling agent, which usually is a water-containing gel but may also be a fatty oil, is applied on the surface of the body before the actual examination is carried out. This coupling agent displaces the air that hinders the examination and thus makes the examination possible.
At present, before the start of the actual examination, said coupling agent is applied by means of a plastic wash bottle or similar device on the surface of the body above the part of the body that is to be examined, after which the examination is commenced. Usually however, it proves to be necessary to interrupt the examination one or more times in order to apply coupling agent once again, since additional areas of the body, which have previously not been provided with the coupling agent, are to be examined or since the coupling agent, due to the heat of the body, has dried up in the course of the examination.
Some examining equipment has a heating chamber, in which said wash bottle is placed for some time before the examination and the coupling agent can be warmed up. Heating the contact medium is absolutely advisable since, by so doing, tension in the patient, which is produced by the coldness of the coupling agent and can hinder the examination, can be avoided. Warming up the coupling agent is, however, made much more difficult by the gel character of the coupling agent and the lack of thermal convection in the gel associated therewith, so that the heat output of the heating chamber is is overtaxed if several examinations are carried out directly one after the other.
It is the object of the invention to provide a device, by means of which said coupling agent can be dispensed from a reservoir to the site of the diagnostic probe and, at the same time, perhaps heated without interrupting the examination.
This equipment comprises a reservoir for the coupling agent, a hose line from the reservoir to the site of the diagnostic probe, such as the sound head, as well as a device for conveying the coupling agent, such as a pump or a reservoir under pressure. If the coupling agent is not to be transported continuously to the site of the diagnostic probe, but on demand by activating a pump, a valve or an electrical contact, an appropriate control device has to be provided.
The coupling agent may be warmed up at a suitable location. If the warming up takes place in or near the reservoir, attention must be paid to adequate heat insulation of the hose line. The output of the warming-up device may also be controlled in a suitable manner, for example, by a thermostat or by using thermostated water.
Some companies package the coupling agent, which is produced by them, in a plastic bag for transport. This plastic bag may function, at the same time, as the above-mentioned reservoir, so that, under certain circumstances, a transfer of the coupling agent to the reservoir may be omitted.
The objective device for conveying and possible warming up the aforementioned coupling agent may be constructed as an independent piece of equipment, an addition to a piece of equipment requiring the use of coupling agents, or as a part of such a piece of equipment.
In the following, three possible embodiments of the objective device are explained by means of schematic drawings.
FIG. 1 shows a very simple version. From the reservoir V, coupling agent is conveyed through hose line L1 to the pump P, which is activated by the foot of the examiner, and from there further through the hose line L2 to the location of the diagnostic manipulation. Hose line L2 may be connected to the electric cable K and to the diagnostic probe S of the diagnostic instrument.
FIG. 2 shows the diagrammatic view of equipment operating with pressure. The reservoir V is placed under pressure by means of pump P or cartridge C, which is filled with compressed gas. If the valve A, disposed in the region of the diagnostic probe S, is opened, the pressure drives the coupling agent through hose lines L1 and L2 as well as through the heater E, where the coupling agent is heated by warm water according to the counter current principle.
FIG. 3 shows the diagrammatic view of equipment operated with an electrically driven pump. From the reservoir V, the coupling agent is forced by means of pump P through the hose line L1, the electrically operated heater E in the region of the diagnostic probe S and through the hose line L2. The pump P is switched on and off through electrical contact B by means of the electric lead EL. Electric power is supplied to the pump P through electric lead SZ. The pump may also be driven by a parameter obtained from the diagnostic instrument, such as "image freeze".
The section 1-2 may intersect two separate electrical leads K and EL and a hose line L1; the leads and line may, however, also be combined to a uniform strand.
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Now that you have an understanding of what oxalates are, how they can cause or aggravate IC (see Hyperoxaluria and IC), and how they can be absorbed in excess into the body (see The Cause), the next step is to look at the levels of oxalates in food.
Oxalates can be found in all vegetables, fruits, nuts, grains and legumes. However the amount of oxalates in each food item varies greatly, from very low to very high. Below is a table to give you a basic overview of the level of oxalates in various foods.
NOTE: Unprocessed meat, fish and eggs contain negligible amounts of oxalate so are not included in the table. However, eating large quantities of meat can cause the body to make its own oxalates so this should be avoided. Rice may also need to be avoided or eaten in moderation due to the high level of inorganic arsenic it contains. Details of this can be found below the table.
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Source : http://lowoxalate.info. This is one of the most up to date lists available
*The level of oxalates in these foods varies according to cooking method. This is the lowest level these foods can be and it is after they have been boiled.
I have recently discovered the current research on high levels of inorganic arsenic in rice and rice products. Please see the links below:
What is arsenic?
Arsenic is a naturally occurring substance in our environment, as well as being the result of contamination due to human activity. It is found in our air, water, soils and foods – with levels of arsenic varying in each region of the world. Arsenic can be inorganic arsenic (the most toxic form) or organic arsenic. It cannot be totally eliminated from food, however having too much arsenic in the diet could increase the risk of illnesses, including cancer.
Additional concerns for IC patients
For IC patients I believe there is further health concern. The main route of arsenic excretion out of the body is in the urine. For someone with a highly sensitive bladder (potentially caused by a damaged lining) the irritating effects of high levels of arsenic could be problematic. (Note: there have been no studies on this yet).
Which rice has the lowest levels of inorganic arsenic?
Professor Andrew Meharg, Professor of Biological Sciences at Queen's University Belfast, answered some questions about rice in a Channel 4 documentary aired in the UK. He stated that the rice with the lowest inorganic arsenic is from African nations. Unfortunately rice from this region is not widely available in the UK, although Egyptian rice can be bought in some Halal shops. Out of all the types of rice on our supermarket shelves the one that contains the lowest levels of inorganic arsenic is basmati rice (from India, Pakistan and Nepal). Second to this, polished rice is always lower than brown rice.
Are there ways to reduce the inorganic arsenic in rice?
Arsenic can be reduced quite significantly by following correct cooking procedures. It has been advised that rice is thoroughly rinsed before cooking, and then cooked it in a large volume of water (around 6parts water to one part rice). Eating it 2-3 times a week is considered 'safe'. However, you will need to make up your own mind and decide if you want to continue eating rice and rice products. For those on a gluten free diet be aware that many gluten free-foods contain rice in one form or another.
So where does this leave you when you're cutting down on oxalates as well?
Cutting out, or cutting down, on rice can cause a problem when trying to eat low oxalate as you still need to consume the necessary carbohydrates for health and vitality. I don't think there is simple answer – what solves one problem causes another – so all we can do is our best. I have eliminated rice completely and substituted it with oats (medium oxalate), peeled and boiled red potatoes (medium oxalate - FYI red potatoes are not on the chart above as it is just a general overview. A more detailed chart is discussed in LOD part 2) and starchy vegetables like butternut squash and turnip (both low oxalate). By eating medium foods (such as oats and red potatoes) in moderation I can still follow an acceptable low oxalate diet. If you want more help or suggestions on what to eat I would advise asking the many knowledgeable and helpful people on the oxalate forum (12,000+ members).
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Jody Lakeman-Brown, Kevin Gibbons, Emma 'Swinners' Swinton and 5 others installed the Pitchero iPhone App.
London Irish are looking to even the score this Saturday, following a very close game in September last year, when the Spit's just pipped them. View News Item »
Spitfires supporter Paul Goodricke has kindly offered to run the London Marathon, donating 50% of his sponsorship money to SASRA (SAS Regimental Assn). View News Item »
Club news, fixtures and results, match reports and team selection now available through the Pitchero iPhone app. View News Item »
As ever the Spitfires Irish fixture was a winner for all who attended. Thanks to all who supported the event, lots of money being raised for Charity. View News Item »


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That lonely Manor on the hill, sorrowful song drifting...
HBG looks great!!! I hope they put him in the Mansion. I gave up my AP this year, sent Disney an email detailing why I wasn't coming back any time soon, but if he goes back ... that would be worth a trip.
I pledge allegiance to the Earth, one planet, many gods, and to the universe in which she spins.
Originally, that attic had genuine antiques (and was a LOT less full), but they replaced it with ersatz antique junk. I wouldn't be surprised if the furniture in the ballroom along the back wall under the balcony and in the dancing area is genuine antique stuff.
Lonesome Ghost has pretty well-placed contacts, so I believe his account. Plus, preparing an AA like that isn't just a matter of throwing some clothes and a mask on a generic robot. You're looking at some money. And if he was just a display piece, why isn't he at least holding the hatbox? And what's so special about having an AA, any AA, no matter how advanced, strike two or three poses over and over?
Of course, they could change their plans, especially now that the story is out and about. It would be nice if the detail about it actually being in the HM with a sheet over it for a day a couple weeks ago was confirmed by a report from someone who may have seen it.
"My mental facilities are twice what yours are, pea brain!"
The conversation continues at Long-Forgotten, the blog.
Coming soon -- Antiques Roadshow: Haunted Mansion. "Mr. Ghost Host, what you've got is an original 1876 rope. Worth $78,000."
Faux-antique style furniture was all the rage in the late 1960's/early 1970's as we wound up to the Bicentennial. You could get it all all price ranges from handmade replicas down to the cheesiest factory knockoffs. I'm sure a lot of stuff that ended up in the Mansions was probably not actual antiques, but not specialty-built, either.
Oh, the amazing yard sale and thrift store finds we had in the '80's and '90's when we were doing our Halloween haunted houses every year! I remember getting a whole king-size bedroom's worth of red velvet fringed draperies for $2.00. I still have some of the big oval mirrors with the filigreed plastic gold frames.
Jump to 12:50 in this video for a display of a smaller Pepper's Ghost/projection effect utilizing the castle in basically a shadowbox.
Theorized in the HBG figure/Expo thread by WhiteWhale:And then added by JDisneyB:When I asked about Hatty's disappearing head gag they simply pointed me over to the illusioneering section stating something along the lines of, "Well if you want to get an idea of how that WOULD be accomplished you can head across to the illusioneering demonstration." It was also interesting to see that one of the main displays illusioneering demonstrated was a figure of Figment "appearing" out of an otherwise "solid" curtain. An effect that seemed VERY much like the Hatty effect we all know so well.Are you guys talking about the special effects section that had the figment in front of it? In there there was a book with a castle that would disappear and reappear really nicely. The imagineer working said that this technology was ready to go and mentioned it being used in the sleeping beauty walkthrough but I think it could work for the hatbox ghost. Maybe that was why they were pointing people over that way?
when the spooks have a midnight jamboree....
"My mental facilities are twice what yours are, pea brain!"
The conversation continues at Long-Forgotten, the blog.
"My mental facilities are twice what yours are, pea brain!"
The conversation continues at Long-Forgotten, the blog.
Doombuggies Facebook had some coverage of the Mansion stuff at the Expo and had this picture from one of the displays.
GRD999 - The Ghost Relations Dept.
"The show's called Pirates of the Caribbean, not Boy Scouts of the Caribbean. They're my babies, you know? I hate to see them fool around with 'em."
-X. Atencio
"Whether I like it or not doesn't matter. Each new generation has the right to come in and do what they feel is right for the show -- and that's what they did."
~Alice Davis
I think the crazy eyes are what really made the Hatbox Ghost as distinctive and creepy as he was. The D23 animatronic doesn't have them.
I think the reason that the attic junk was replaced was that some guests kept swiping the antiques closer to the track. I don't remember if I read that here. I do remember a story of a guest taking a prop of out of the attic, and security was waiting for him at the exit crypt.
I must have read that here or on the Long-Forgotten blog.
(after 7 years and 7 threads that are almost 500 pages, this should be called the the "Short- Remembered Haunted Mansion Effect thread")
(I may have told that joke years ago)


text: Looking for PeopleSoft Financial Techno functional person Hourly - Est. Time: More than 6 months, 30+ hrs/week - Posted 24 days ago Hi, I am looking for a Peoplesoft Techno Functional financial person with 6 or more years of experience. This is for a long Term support and enhancement project. Thanks, ERP Consulting Group Skills: PeopleCode Oracle Peoplesoft Administration Oracle Peoplesoft Development


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Test and enhance the depth of your knowledge. Taking this quiz will be a self-assessment for you. Playing on daily basis will also help make you more conscious of the world surrounding you. Also help others by sharing your own invaluable knowledge and enlighten the world through education. The main goal for developing this android app is to help you know about the world a little bit better. Any kind of suggestions and recommendations are highly appreciable. Please keep posting your comments
Send beautiful Holi greetings right now from your phone.Create your own greeting card by choosing everything from the background to the various extras that adorn it. Or if you're feeling too lazy, just pick from a range of ready-made cards.This app also lets you sign at the end to let your loved ones know it's really you and not some evil robot. Once you're happy with the card, send it as an email, Facebook or through your favorite communication app.
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You Can Send beautiful greetings to loved ones via mail or share on Facebook and others. Diwali is celebrated through festive fireworks, lights, flowers, sharing of sweets and worship of Goddess Keywords: Diwali, Pooja, Arti, Crackers, Sweets, Family, Love, Blessings, Wishes, Dhanteras, Laxmi, Ganesh, New Year, Lights, Festival, Festivities, Children, Food, Mahurata, Vidhi, Samagri, Vrat, Preparation, Techniques, Kalasha, Saraswati, Cards, Greetings, Govardhan,
Its time to do more with your hair. - Decorate Hair with flowers Going to attend any special occasion - (Wedding, Birthday Celebration, Get together, Party, Meeting or festival) & wanna be Eye-Catcher... We are here with 225+ style images on how to decorate hair using flowers as per any occasion (and also relevant to different hairstyle). Features * You can set any style image on your phone's wall. * You can save any style image in gallery. So, blossom your beauty & enjoy the application.


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A trench which provides electrical isolation between transistors on an integrated circuit substrate is described. The trench is lined with a diffusion barrier, typically a thermal oxide followed by a thermal stress relief layer, typically formed from TEOS. Then a filler material, typically BPTEOS, is deposited to fill the trench and cover the upper surface of the wafer. The filler material is heated to make it flow. Next the outer surface of the flowed filler material is next subjected to an etch-back which makes the top surface of the filled trench protrude slightly above the upper surface of the substrate. The resulting trench contains the diffusion barrier layer, the thermal stress relief layer, and the filler material. The filler material and the thermal stress relief layer will soften during subsequent heat treatments of the wafer, thus relieving thermal stresses, and preventing the occurrence of defects and dislocations within the wafer.
1. A method of semiconductor device fabrication comprising:
forming a trench into a substrate;
forming a diffusion barrier layer in said trench;
characterized by the further steps of
depositing a thermal stress-relief layer upon said barrier layer;
depositing a filler material upon said thermal stress relief layer, said filler material having an outer surface and filling said trench, said filler material having a flow temperature which is lower than the flow temperature of said thermal stress relief layer;
heating said filler material to at least its flow temperature to smooth said outer surface; and etching back said upper surface of filler material.
2. The method of claim 1 wherein said substrate is silicon.
3. The method of claim 1 wherein said thermal stress relief layer is formed by deposition of a material chosen from the group consisting of tetraethoxysilane, diacetoxyditertiarybutoxysilane, and tetramethylcyclotetrasiloxane.
4. The method of claim 1 wherein said thermal stress relief layer is borophosphosilicate glass.
5. The method of claim 1 wherein said filler material is formed by deposition of a material chosen from the group consisting of: tetraethoxysilane, diacetoxyditertiarybutoxysilane, and tetramethylcyclotetrasiloxane, together with dopants to promote flowability.
6. The method of claim 1 wherein said diffusion barrier is silicon dioxide.
7. The method of claim 1 wherein said filler material contains 3�1/2 percent each boron and phosphorous by weight.
8. The method of claim 1 wherein said etching-back step includes the steps of:
depositing a resist material upon said outer surface of said filler material;
planarizing said resist; and,
etching said resist and said filler material to expose the outer surface of said filler material.
9. The method of claim 1, wherein said heating step and said etching-back step are performed more than once.
10. The method of claim 1, wherein said heating step is performed in a furnace at 950� C.�50� C.
11. The method of claim 1, wherein said heating step is accomplished by rapid thermal annealing at 1050�50� C.
12. The method of claim 1 wherein said filler material contains dopants and wherein said thermal stress relief layer contains dopants in a lesser concentration than said filler material.
13. A method for semiconductor device manufacture comprising:
depositing a first silicon dioxide layer upon a surface of a silicon substrate;
depositing a layer of silicon nitride upon said first layer of silicon dioxide;
selectively etching through said silicon dioxide layer and said silicon nitride layer into said silicon substrate to form at least one trench, said trench having sidewalls and a bottom, a portion of said first silicon dioxide layer, and said silicon nitride layer remaining on said silicon surface;
forming a second silicon dioxide layer on said sidewalls and said bottom of said trench;
depositing a thermal stress relief layer upon said second silicon dioxide layer, said thermal stress relief layer being formed by the decomposition of an oxide precursor gas, said thermal stress relief layer defining a cavity within said trench;
depositing a flowable filler material into said cavity, said filler material being produced by the decomposition of an oxide percursor gas, together with boron and phosphorous, said filler material being thick enough to substantially fill said cavity and to have a thickness above said surface of said silicon substrate, said flowable filler material having a flow temperature lower than the flow temperature of said thermal stress relief layer;
heating said flowable filler material to cause said filler material to flow;
etching back said filler material, together with said portion of said first silicon dioxide layer remaining on said silicon surface and together with the said portion of said silicon nitride layer remaining on said silicon surface to expose said silicon surface and to create an upper surface on said filler material which protrudes slightly above said silicon surface.
1. Field of the Invention
This invention relates to semiconductor integrated circuits and more particularly to integrated circuits with trenches for inter-device isolation.
2. Description of the Prior Art
As integrated circuits become smaller, the need for effective isolation between individual devices becomes more critical. Structures used for inter-device isolation should desirably provide effective electrical isolation while occupying little space and allowing good surface planarity.
One method of inter-device isolation is the use of a field oxide between devices. Field oxides provide acceptable isolation between devices with shallow active regions. However, field oxides grown by conventional processes often exhibit birds beaks and other formations which not only cause undesirable encroachments into device areas but also adversely affect surface planarity.
Trench isolation is another way of providing inter-device isolation. Trench isolation is applicable to both bipolar and field effect transistor technologies. Trenches generally consume less space than field oxides. Traditionally, trench isolation involves etching a narrow, deep trench or groove in a silicon substrate and then filling the trench with a filler material such as a silicon oxide or polysilicon. Trenches are also often used in memory design to provide information storage capacity which requires good electrical connection to selected transistors. However, isolation trenches described here are designed to have minimal charge storage and no electrical connection to any transistor.
As already mentioned, trenches are often filled with "hard" materials such as silicon oxide or polysilicon. However, existing techniques do not permit wide variations in the dimensions of the trench. For example, if a wafer contains both large and small trenches and polysilicon is deposited so that it fills the small trenches, the large trenches will not be completely filled. Furthermore, since polysilicon deposition is not always completely conformal, voids, or at least seams, may form in the polysilicon, especially in narrow trenches. The voids may trap various impurities which may later cause reliability problems.
Another problem with the use of "hard" materials is that they may cause dislocations and other defects in the silicon substrate during subsequent high temperature processing of the wafer due to the differences in rates of thermal expansion between the "hard" filler material and the silicon substrate. Furthermore, trenches formed by traditional techniques have upper surface which are difficult to planarize. Consequently, most designers who employ trenches use them in narrow inter-device regions and use conventional thermally grown field oxides in wider inter-device regions.
Those concerned with the development of advanced semiconductor integrated circuit technology have engaged in a continuous search for improved methods of inter-device isolation and particularly for improved methods of inter-device trench formation of various sizes.
One approach to trench construction is illustrated in Becker et al., "Low Pressure Deposition of Doped SiO2 by Pyrolysis of Tetraethylorthosilicate (TEOS)", J. Electrochem. Soc., Vol. 134, No. 11, pp. 2923-2931 (1987). The publication discusses trenches which contain silicon dioxide spacers and a silicon dioxide block in the center of the trench. The silicon dioxide block effectively reduces the size of the trench cavity; thus making a wide trench into two or more narrow trenches which may, of course, be more easily filled.
Applicants have invented a method for fabricating trenches in a wide range of sizes that avoids a variety of problems associated with prior art techniques, such as thermally generated stresses in the substrate and voids in the trench filler material. In a typical embodiment of this invention, a trench is etched into a substrate, typically silicon, around the device area which is to be isolated. The interior of the trench is then covered with a primary diffusion barrier; for example, a thermally grown oxide. The primary diffusion barrier serves to prevent diffusion of dopants contained in materials which may subsequently be used to fill the trench. Next, a thermal stress-relief layer (i.e., one that absorbs stresses due to heating efforts), for example, a conformal dielectric, is deposited in the trench over the primary diffusion barrier. The thermal stress-relief layer also serves as a secondary diffusion barrier. Next a third layer of filler material, such as a flowable dielectric is deposited within the trench on top of the thermal stress-relief layer. The filler material has a flow temperature which is lower than the flow temperature of the stress-relief layer. The filler material is deposited with sufficient thickness to completely fill the remainder of the trench and cover the upper surface of the silicon wafer. Then the filler material is flowed by heating it to its flow temperature. During the heating process, the stress-relief layer softens without flowing. The relatively soft stress-relief layer absorbs the stresses generated during the heating process and prevents cracking or dislocations in the diffusion barrier or silicon substrate. Meanwhile, the resulting surface topography of the filler material becomes comparatively flat after flow. Finally, an etch-back planarization step is used to etch the flowed filler material back to the surface of the substrate. After the trench is filled, device processing steps may be started.
FIGS. 1-8 are cross sectional views of structures of one illustrative embodiment formed by an exemplary sequence of processing steps; and
FIG. 9 is a cross sectional view of an additional illustrative embodiment of the present invention.
FIGS. 1-9 have not been drawn to scale so that they may be more clearly understood. Furthermore, the details of individual transistor structures have been eliminated to make the figures clearer. Only cross-sections of trenches are shown. The figures schematically show both a narrow trench and a wide trench. Alternatively, the pair of illustrated structures may be considered cross-sectional views of different points through the same trench.
In FIG. 1, reference numeral 11 denotes a substrate, which may be typically silicon. Substrate 11 may include an upper epitaxial layer, if desired. Reference numeral 13 denotes a grown or deposited dielectric pad which may be typically silicon dioxide. Reference numeral 15 denotes a masking layer which may be typically silicon nitride. Reference numeral 17 refers to a patterned material such as a photoresist. Those skilled in the art will realize that pad 13 and masking layer 15 may be formed by conventional techniques during typical initial stages of semiconductor processing. Representative thicknesses for layers 15 and 13 are 1000-3000 Å and 100-400 Å, respectively.
Alternatively, if desired, masking layer 15 may be polysilicon with a thickness of 1000-4000 Å. Polysilicon may be desired as the masking layer instead of silicon nitride because an etchback planarization step (to be described later) typically has greater selectivity for polysilicon than silicon nitride. Other materials may also be used.
Photoresist 17 may be patterned by conventional techniques. Then, the entire structure is etched by techniques well-known to those skilled in the art to "dig" trenches 51 and 53 (illustrated in FIG. 2). (If cover layer 15 is a nitride layer, photoresist 17 may be stripped if desired, before trenches 51 and 53 are created. Nitride layer 15 can then serve as an etch mask. However, if cover layer 15 is polysilicon, photoresist 17 typically remains in place during creation of trenches 51 and 53 because polysilicon does not serve as an effective mask for the common etchants used in etching the underlying silicon substrate.)
One recipe for "digging" a suitable trench is a two-step reactive ion etching process practiced by those skilled in the art. The first step utilizes 150 sccm O2, together with 15 sccm SF6 at 500 Watts power and 400 milliTorr for 1-7 minutes. The second step utilizes 2.5 sccm Freon-13B1 at 500 Watts and 600 milliTorr until a satisfactory trench depth and profile is achieved. Typical trench depths are 1-5 μm. Numerous other etching recipes will occur to those skilled in the art.
Trench 51 has been illustrated in FIG. 2 as being narrower than trench 53. The invention described herein is applicable to trenches with a wide variety of widths. Trenches as narrow as 0.6 μm and as wide as 30 μm have been created with the present technique.
After trenches 51 and 53 have been created, as illustrated in FIG. 2, photoresist 17 is stripped if it has remained in place (e.g., if masking layer 15 is polysilicon). Next, a primary diffusion barrier layer 21 is formed on the sidewalls and bottom of trenches 51 and 53. The diffusion barrier 21 should be a material which exhibits relatively few interface charge traps with substrate 11. Interface charge traps are undesirable because trapped charges attract opposing charges in the substrate, thus creating a channel on the trench wall which, in combination with adjacent source/drain regions, will comprise a parasitic transistor.
An exemplary candidate for layer 21 is a thin, high-quality undoped silicon dioxide layer. FIG. 3 illustrates oxide layer 21. A steam-grown thermal oxide formed at approximately 850� C. is a good candidate for oxide layer 21 because of its low stress and low silicon-interface trap density. A representative thickness for layer 21 is 100-400 Å. A uniform thickness for layer 21 is desirable and achievable by the above process.
Next, as illustrated in FIG. 4, a thermal stress-relief layer 23 is formed upon diffusion barrier layer 21. As can be seen from FIG. 4, stress-relief layer 23 completely covers oxide layer 21 on the bottom and sidewalls of trenches 51 and 53. A comparatively uniform thickness for layer 23 is desirable. A representative thickness for layer 23 is 1000-3000 Å.
Stress relief layer 23 may be, for example, borophosphosilicate glass (BPSG) or an oxide layer deposited by the pyrolysis and decomposition of tetraethoxysilane [(Si(OC2 H5)4 ], abbreviated TEOS. Methods for depositing BPSG or pyrolyzing TEOS are well-known to those skilled in the art. Consequently, the expression "depositing a layer of TEOS" is generally understood by those skilled in the art to mean the deposition of a dielectric layer by decomposition and pyrolysis of TEOS in a reactor. The resulting oxide of silicon exhibits excellent step coverage. Other oxide precursor gases, for example, silane, may be employed, if desired. However, TEOS is comparatively safer to handle than, for example, silane.
Other materials may also be used for layer 23. Whatever material is utilized for layer 23, it should have a low charge trap density and a comparatively high flow temperature. The significance of the comparatively high flow temperature layer 23 will be subsequently explained.
After layer 23 is deposited, a filler layer 25, illustrated in FIG. 5, is deposited. The filler layer 25 is a material which flows at a lower temperature than stress-relief 23. Furthermore, filler layer 25 is deposited in sufficient quantity to fill the trench.
An exemplary candidate for filler layer 25 is an oxide formed by the pyrolysis and decomposition of TEOS with approximately 3 percent boron and 3 percent phosphorous by weight added. The resulting dielectric material is often assigned the acronym, BPTEOS, associated with the chemical precursors used in its deposition. Thus, the expression "depositing a layer of BTPEOS" is generally understood by those skilled in the art to mean the deposition of a dielectric layer by decomposition of TEOS in the presence of phosphorous and boron dopants in a reactor. The phosphorous and boron dopants may be obtained, for example, from trimethylphosphite, phospine, trimethylborate, trimethylphosphate, triethylphosphite, or triethylphosphate.
A variety of other materials may be selected to produce layers 23 and 25. For layer 23, the chemical precursors, diacetoxytditertiarybutoxysilane (C10 H26 O4 Si), known by the acronym "DADBS", or tetramethylcyclotetrasiloxane (C4 H16 Si4 O4), known by the acronym "TMCTS", sold by J. C. Schumacher, a unit of Air Products and Chemicals Inc. under the trademark "TOMCATS", may be used. Deposition techniques for these materials are known to those skilled in the art.
For layer 25, any of the above chemical precursors may be combined with dopants to provide a suitable flowable filler material. Furthermore, layer 23 may be also formed from any of the above precursors, together with dopants, provided the doping level in layer 23 is lower than in layer 25 so tht layer 25 will have a lower flow temperature than layer 23.
For example, the flow properties of dielectrics deposited from BPTEOS are substantially influenced by the percentages of included boron and phosphorous. Consequently, one might use BPTEOS to form thermal stress relief layer 23 if layer 23 includes lesser amounts of dopants from filler material 25 so that the flow temperature of layer 25 remains below the flow temperature of layer 23. Alternatively, a thermal stress-relief layer 23 formed from TEOS with a small amount of phosphorous and no significant amount of boron (known by the acronym PTEOS) may be used, provided the phosphorous content is adjusted so that the flow temperature of layer 25 remains below the flow temperature of layer 23. It should also be noted that the flow temperature of filler material 25 should desirably be higher than the temperatures of all subsequent furnace heat treatments to which the wafer is subjected.
After filler material 25 has been deposited, it is flowed by heating it, either in a furnace or by a rapid thermal anneal (RTA) process. The resulting structure after flow is illustrated in FIG. 6. If BPTEOS is used for layer 25, with the specified amounts of boron and phosphorous, it may be flowed at a temperature of between 850� C. and 950� C. for 1/2 to 2 hours in an atmosphere of either nitrogen or oxygen. Alternatively, the BPTEOS may be rapidly thermal annealed (RTA) at 1000� C. for 30-60 sec.
The structure of FIG. 6 is next subjected to an etchback planarization technique to planarize the surface of the wafer. Various etchback planarization techniques are well-known to those skilled in the art. Typically, a photoresist 81 is deposited on top of layer 25. The photoresist 81 is spun to create a planar upper surface. Then the combination photoresist and layer 25 is etched with an etchant that attacks both materials at the same rate. U.S. Pat. No. 4,481,070 issued to Thomas et al. illustrates an etchback planarization technique.
If trench 51 is very narrow (i.e., has a high aspect ratio), voids may be formed in layer 25 after it is deposited. To prevent voids, a repeated flow and etchback procedure can be performed. The repeated flow and etchback procedure can be accomplished by those skilled in the art in separate reactors, or in a single reactor. During the repeated flow and etchback procedure, a photoresist material is applied to the surface of layer 25 and planarized, for example, by spinning. Then, the combination photoresist and layer 25 are etched downward for some distance. Layer 25 is then heated to its flow temperature. Then, another photoresist is applied and the entire process repeated one or more times.
Referring to FIG. 5, the height of trench 53 is denoted by h2. The thickness of layer 25 within trench 53 is denoted by h3. It is desirable that h3 be greater than h2 so that the trench will be completely filled before flow and etchback begins. The thickness, h1 of layer 25 above the upper surface of the wafer is, typically, equal to h3. Dimples, or hollows, 61 and 63, may be noted in the upper surface of layer 25 above trenches 51 and 53, respectively. Because trench 53 is wider than trench 51, dimple 63 is wider than dimple 61, due to the fairly conformal properties of layer 25. Of course, no matter how wide the trench, it will be virtually completely filled if the thickness of deposited layer 25 is chosen to be equal to or greater than the depth of the trench.
FIG. 7 illustrates the wafer after photoresist 81 and layer 25 have been etched back until the upper surface of layer 15 (typically silicon nitride or polysilicon) has been reached. Comparisons of FIGS. 6 and 7 shows that the upper portion of layer 23 has also been removed. The upper portion of layer 23 may be removed by the same etchback procedure if layer 23 is, for example TEOS or BPTEOS and layer 25 is formed from BPTEOS. Should layer 23 be a material which is not easily etched by the procedure which etches layer 25 and photoresist 81, it may be stripped by a separate procedure using a different etchant.
When the configuration depicted in FIG. 7 is reached, layers 15, 13 and a small portion of layer 23 which is adjacent those layers may be stripped away to produce the configuration shown in FIG. 8. FIG. 8 illustrates the wafer with trenches 51 and 53 filled and upper surface 71 of silicon ready for further processing, such as device formation, according to procedures known in the semiconductor art.
FIG. 8 shows that the upper surfaces 531 and 511 of trenches 51 and 53 protrude somewhat beyond upper surface 71 of the silicon wafer. The protrusions 531 and 511, which are typically a few hundred Angstroms, are advantageous because they help prevent parasitic channel formation around the sidewalls of the trench, which may occur with trenches formed by conventional processes. A parasitic channel may be formed when the gate runner contacts exposed oxide on the trench sidewall. If the exposed oxide is thinner than the gate oxide of an adjacent MOS transistor, the parasitic channel causes increased transistor leakage current. (A discussion and diagram of parasitic channel formation is contained in Kurosawa et al., "A New Birds'-Beak Free Field Isolation Technology for VLSI Devices", IEEE IEDM Technical Digest, pp. 384-387, 1981.)
The presence of protrusions 531 and 511 is ensured by layer 15. Layer 15 serves as an etch-stop for the planarization etch-back process and helps to govern the height of protrusions 531 and 511.
As mentioned before, the technique just described works nicely to fill trenches of various sizes on the same wafer. Returning to FIG. 5, it will be noted, as mentioned before, that narrow trench 51 has a relatively narrow dimple, 61, in layer 25. By contrast, wide trench 53 has a much wider dimple, 63 in layer 25. However, the planarization step illustrated by FIG. 6, permits adequate filling of wide trench 53, as well as narrow trench 51.
Another advantage of the present invention is that relatively few crystalline defects are generated in silicon substrate 11 during the fill-in sequence illustrated in FIGS. 3-6. Thermal stress-relief layer 23 softens during the deposition and subsequent heating of filler material 25. The soft layer 23 absorbs the thermal stresses generated during the deposition and subsequent heating of layer 25, thus preventing, or at least reducing, the occurrence of defects and dislocations in layer 21 or substrate 11. Furhermore, subsequent heat treatments performed after the creation and filling of trenches 51 and 53 are not likely to induce cracks, defects, or dislocations in substrate 11. During subsequent heat treatments, both dielectrics 25 and 23 soften and absorb thermally generated stresses.
Layer 21 (and, to a lesser extent, layer 23) serves as diffusion barriers. They prevent dopants which may be used in filler material 25 from diffusing into the substrate.
The above-described technique exhibits a variety of advantages over prior art techniques. One already-mentioned prior art technique creates a silicon dioxide block within the trench itself. The block effectively partitions a large trench into two or more smaller trenches. However, creation of the block requires an additional mask. Applicants' invention avoids the use of such an additional mask. An additional advantage of applicants' invention is the prevention of parasitic transistor formation. Convex protrusions 511 and 531 are instrumental in preventing parasitic transistor-formation. The presence of protrusions 511 and 531 is ensured by mask layer 15 (which is subsequently etched away). By contrast, some prior art trench designs have concave upper surfaces which, under various circumstances, may increase the liklihood of parasitic transistor formation. For example, the structure shown in FIG. 15 of the Becker et al. article (as noted above) has a concave upper surface. The sides of the trench have spacers which are formed by depositing and then etching TEOS. However, in a manufacturing environment, the spacers cannot be consistently made with an upper surface which is smooth with the top of the silicon substrate. Some overetching will inevitably occur on some spacers. Consequently, the trench will have a region of exposed silicon on its sidewall (above the slightly overetched spacer). Subsequent normal device processing steps may create a parasitic device at the upper exposed portion of the trench wall.
A few other advantages of the inventive design are also worthy of mention. Prior art trenches filled with polysilicon may exhibit voids or seams which may trap various impurities. The impurities may later escape and cause device reliability problems. Applicants' invention may be practiced, as mentioned before, with a repeated flow and etchback procedure which is very helpful in eliminating voids in the filler material. Furthermore, polysilicon is not an ideal insulator, having a resistivity of roughly 106 Ω-cm. The oxides employed in applicants' trench have resistivities approximately eight orders of magnitude greater--thus, providing better isolation.
The present invention is not limited to trenches with straight sidewalls. FIG. 9 illustrates two trenches 151 and 153 with slanted sidewalls. Trench 151 is "V" shaped with slanted walls 163 and 165 and bottom 161. Trench 153 has a flat bottom and slanted sidewalls 173 and 175. Various methods for making trenches with slanted sidewalls are known to those skilled in the art. These methods include wet chemical etches utilizing KOH or plasma taper etches.
Both trenches are filled and processed in the manner previously described. The resulting structures shown in FIG. 9 contain layers 121, 123, and 125 which are akin to layers 21, 23, and 25 of FIG. 8.
Other embodiments of the inventive principles disclosed herein are also contemplated, including use with Groups III-V substrates, such as gallium arsenide.
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Tonight's football menu at Starkville High School comes with a little bit of egg.
The clash between the Starkville Yellowjackets and the Oxford Chargers has been given the title of Little Egg Bowl and there will be a trophy awarded to the winner.
It's a situation that both cities have embraced and something SHS football coach Jamie Mitchell hopes turned into a tradition. Kickoff is set for 7 p.m.
"With reclassification, it kind of opened up a spot or two on the non-division schedule so it just made sense," Mitchell said. "I'm thankful that (Oxford coach) Johnny (Hill) wanted to do it. It can be a good game for both of us.
"It is a unique spin and our kids are excited about it. They know there's going to be a trophy given away and that gets kids excited so it will be a pretty good deal for us."
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Giant corporations pay little or no federal taxes
Robert Lorei
Radioactivity: Live Call-In (Thursday) | Listen to this entire show:
On part two of today's Radioactivity an interview with Chuck Collins who is a senior scholar at the Institute for Policy Studies where he directs the Program on Inequality and the Common Good. He is co-author of "The Moral Measure of the Economy" and with Bill Gates Sr. of "Wealth and Our Commonwealth: Why America Should Tax Accumulated Fortunes.
Collins recently wrote the piece "Pay Up, Corporate Tax Dodgers," which states: "Instead of cutting state and federal budgets, the United States should crack down on the corporate tax dodgers thumbing their noses at us." He writes of several well known corporations who pay little or underpay their federal taxes. The companies he writes about include Exxon Mobil, Pfizer, Apple, Boeing and Bank of America.comments powered by Disqus
CommentsBREAK THE CODE!!!
Another outstanding interview⦠Mr. Collins knew his stuff!!! But seriously⦠are protesters standing at the entrance of their US corporate offices⦠the way to get them to pay-up??? Personally⦠I believe this to be another good argument to scrap the existing Tax-Code. There must be a way for a âFair Taxâ or âConsumption Taxâ â¦blended with the USITC and the Harmonized Tariff Schedule (to cover offshore subsidiaries)⦠to stop this!!! And, adding another couple of hundred pages to the existing 51,000 pages of the Tax-Code aint the way to do it. You want to fix the budget??? BREAK THE CODE!!!


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After three years of Northwest business, Ninkasi Brewing Co. plans to expand its presence.
The retail giant announces plans to build a second Portland store at Hayden Meadows.
A Bend RV dealer switches to smaller vehicles and downsizes its staff to stay in the game.
Petitioners collect enough signatures to allow residents to vote on legalizing hard-liquor sales.
The Pacific region will see an 11.2% increase in holiday travel this winter.


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One hot trend in corporate America is to use quick, real-time experiments in grocery stores, restaurants and hospitals to measure the impact of various interventions on customer behavior. A common example is testing a variety of website layouts and messages. Those accessing a site will randomly be shown different versions, and the site owner compares reactions (say, click-throughs) by the visitors to see which configurations get the best response.
It is time to introduce the idea of quick experiments into government. As with the example above, agencies could use that approach to test alternative website configurations. Or they could use it to test the impact of different versions of public service announcements, perhaps randomly shown in different TV markets, or other government initiatives designed to influence behavior.
I am especially interested, however, in a different use of experiments: to check the impact of various management interventions on the performance of employees or teams inside agencies.
Recently, I came across some fascinating academic papers by Gary Latham, a professor at the University of Toronto's Rotman School of Management and the world's leading researcher on the impact of goal-setting on human performance, and his colleague Amanda Shantz. They tested the impact of "priming" an unobtrusive performance-enhancing message on the performance of call-center employees.
Priming is a technique commonly used to set up social psychology experiments. Say the researcher wants to test the impact of power on behavior. It turns out to be possible to prime feelings of power or powerlessness among experimental subjects — in this case, by asking members of the experimental group to think about a situation in which they felt powerful, while asking members of the control group to think about a situation in which they felt powerless. Amazingly, for most of us, priming succeeds in evoking the feelings whose impact can then be tested in the lab.
Rather than using priming to set up the experiment, Shantz and Latham made it the experiment itself. They gave a group of call-center employees information about the cause and the organization for which they were being asked to raise money. For half the group, the background of the information sheets had a photo of an Olympic race winner crossing the finish line, arms raised toward the sky and face beaming. The control group's information sheets had a plain background.
The result: The group that received the information sheets with the Olympic photo raised more money than the control group during a four-hour shift.
I cite this research partly because it raises some intriguing questions. For example, could we improve the performance of U.S. Patent and Trademark Office staff by putting pictures of great American inventions as their computer screen savers? More broadly, are there management interventions that could significantly enhance the public service motivation of civil servants? (Adam Grant, an associate professor at the Wharton School at the University of Pennsylvania, has done some fascinating experiments along those lines.) Furthermore, are there management interventions that could improve information sharing among employees or encourage cost-saving ideas?
I also raise this example to illustrate a broader point: A quick-experiment revolution is spreading fast in companies. That revolution needs to spread to government, too.
About the Author
Kelman is professor of public management at Harvard University's Kennedy School of Government and former administrator of the Office of Federal Procurement Policy. Connect with him on Twitter: @kelmansteve
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Three-time Federal 100 winner is leaving government in July.
Members of Congress heaped hard questions on federal IT leaders at a June 16 hearing and suggested strongly that somebody needs to be fired.
Senate bill carves out exemption for supercomputing and other lab IT; an earlier version of the measure would have exempted the entire Department of Energy.
OPM is partnering with CSID to try to manage the fallout from a massive breach of some 4 million federal personnel records.
Steve Kelman applauds the OMB's move to make career employees "goal leaders" for performance management initiatives -- but wishes it had come far earlier in the administration.
In an exclusive interview, Jimaye Sones, who was Defense Information Systems Agency comptroller from 2005 to 2013, says he was reassigned after revealing questionable accounting practices at the agency.
Through computer forensics training and internships, veterans are helping Immigration and Customs Enforcement tackle a backlog in child exploitation cases.
After two months on the job studying DOD's cybersecurity and IT needs, Secretary Ashton Carter is set to unveil a new Pentagon cyber strategy in Silicon Valley.
The failure of massive federal IT projects can usually be traced to poor management. The solution is as multilayered as the projects themselves.
The best way to get performance from a Fed is to treat them like a scum-of-the-earth contractor.
One problem with experiments is that you never know how much is hype and how much is reality. Also, you need to weigh the benefit against the cost of the experiment. Yeah, these experimenters are quick to mention the supposed benefits but neglect to mention how much they are going to charge you for the experiment that may or may not work and may even backfire. Also, you need to include the continuing cost of whatever action you need to implement to get your improved performance. The only group guaranteed to come out ahead are the people hired to run the experiment.
Subliminal messages on my PC? OK - I still get paid right?
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Camping , Coffee and conversation , Dining out , Hobbies and crafts , Movies/Videos , Museums and art , Exploring new areas , Travel/Sightseeing , Video games
Auto racing / Motorcross, Billiards / Pool, Bowling, Cycling, Inline skating, Swimming, VolleyBall, Walking / Hiking
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I have Dogs
I like Cats, Fish, Other
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text:
Essential Guide
FAQ: Backing up virtual servers today
A comprehensive collection of articles, videos and more, hand-picked by our editors
How virtual machine replication to the cloud is changing data protection
Brien Posey discusses how the ability to replicate and run virtual machines in the cloud is changing data protection and DR for SMBs.
FAQ: Backing up virtual servers today
How is server virtualization changing data protection today -- more specifically, how is virtual machine replication...
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to the cloud changing data protection?
Having the ability to run virtual machines in the cloud is having a rather dramatic impact on data protection. This is especially true for smaller organizations.
One of the most fundamental and long-lasting concepts of data protection is that the only way to achieve adequate protection is to have a copy of your data stored securely off-site. Even so, the way in which this off-site protection is achieved varies widely, depending on the size of the company.
For instance, large companies often have remote data centers. Line-of-business applications may be protected by stretching failover clusters to include remote nodes. Similarly, virtual machines (VMs) might be configured in a way that allows them to fail over to a remote facility. Conversely, smaller organizations are often limited to shipping tapes off-site or perhaps performing cloud backups. In other words, large organizations tend to use remote facilities as part of their continuity of business solution, while smaller organizations usually lack the budget for such protection.
Virtual machine replication gives companies the ability to run VMs in the cloud. This is beginning to level the playing field, so to speak. Now, an organization might not need to invest in a remote data center. For the first time, smaller organizations can have continuity-of-business solutions that rival those of larger organizations. If something were to happen to an organization's primary data center, virtual machine replication allows the VM replicas to be brought online and used to keep the business running.
Next Steps
New CTO previews VMware hybrid cloud strategy beyond DRaaS
How Hyper-V Recovery Manager works and where it falls short
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What are the pros and cons of using BRIC for a redundant cloud architecture?
Expert Brien Posey explains how using a Bunch of Redundant Independent Clouds architecture can protect data, but not without three common hurdles.continue reading
What complications can arise when thin provisioning VMware storage?
Brien Posey dives into the complications users might run into with thinly provisioned VMware data stores and how to address them.continue reading
What is VMware VAIO and why is it important?
VSphere APIs for I/O Filters, available with the next release of the hypervisor, lets third-party products access a VM's I/O stream to provide ...continue reading
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Originally written on Fox Sports Arizona | Last updated 4/23/13
By ALAN FERGUSON STATS Writer After watching his team add to its early dominance against division foes, the San Francisco Giants' Matt Cain will attempt to continue his versus the Arizona Diamondbacks. While trying to bounce back from a rough outing, Cain will also look to lead the Giants to an eighth consecutive home win and a season-high fifth in a row overall Tuesday night as he opposes the red-hot Patrick Corbin. San Francisco (13-7) improved to 9-1 against the NL West by rallying for a 5-4 victory in Monday's series opener at AT&T Park. Buster Posey hit a tying two-run homer in the eighth inning, and Brandon Belt singled in the winning run in the ninth. "There's no quit in this team. I can tell you that," pitcher Ryan Vogelsong said. "We fight til the last out. It's pretty fun to watch." Cain (0-2, 7.15 ERA) will try to help his team register its 10th consecutive win against a division foe while earning his first of the season. The right-hander, though, could use a far...
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a1 Development and Cell Biology, Biomedical Sciences Building, University of Southampton, Bassett Crescent East, Southampton SO16 7PX, UK
a2 Developmental Origins of Health and Disease Division, University of Southampton, Princess Anne Hospital, Coxford Road, Southampton SO16 5YA, UK
a3 MRC Epidemiology Resource Centre, Southampton General Hospital, Tremona Road, Southampton SO16 6YD, UK
a4 Institute of Human Nutrition, Southampton General Hospital, Tremona Road, Southampton SO16 6YD, UK
Prenatal nutritional constraint induces an altered metabolic phenotype in the offspring which in humans confers an increased risk of non-communicable disease. Feeding a protein-restricted (PR) diet to pregnant rats causes hypomethylation of specific gene promoters in the offspring and alters the phenotype. We investigated how altered epigenetic regulation of the hepatic glucocorticoid receptor (GR) 110 promoter is induced in the offspring. Rats were fed a control (180 g casein/kg) or a PR (90 g casein/kg) diet throughout pregnancy, and chow during lactation. Offspring were killed at postnatal day 34 (n 5 per maternal dietary group). Methylation-sensitive PCR showed that GR110 promoter methylation was 33 % lower (P < 0·001) and GR expression 84 % higher (P < 0·05) in the PR offspring. Reverse transcription–PCR showed that DNA methyltransferase-1 (Dnmt1) expression was 17 % lower (P < 0·05) in PR offspring, while Dnmt3a/b and methyl binding domain protein-2 expression was not altered. Thus hypomethylation of the GR110 promoter may result from lower capacity to methylate hemimethylated DNA during mitosis. Histone modifications which facilitate transcription were increased at the GR110 promoter (147–921 %, P < 0·001), while those that suppress methylation were decreased (54 %, P < 0·01) or similar to controls. In human umbilical cord (n 15), there was a 2-fold difference between the highest and lowest level of GR1-CTotal promoter methylation. Dnmt1, but not Dnmt3a, expression predicted 49 % (P = 0·003) of the variation in GR1-CTotal promoter methylation. These findings suggest that induction in the offspring of altered epigenetic regulation of the hepatic GR110 promoter, and hence metabolic phenotype, may be due to reduced Dnmt1 expression.
(Received July 14 2006)
(Revised December 12 2006)
(Accepted December 18 2006)
Key Words:
c1 *Corresponding author: Dr G. C. Burdge, fax +44 (0) 23 80594379, email email@example.com
Abbreviations: ChIP, chromatin immunoprecipitation; Dnmt, DNA methyltansferase; GR, glucocorticiod receptor; HDAC, histone deacetylase; HMT, histone methyltransferase; MBD, methyl binding domain protein; MeCP2, methyl CpG-binding protein; PEPCK, phosphoenolpyruvate carboxykinase; PPAR, peroxisomal proliferator-activated receptor; PR, protein restricted; RT–PCR, reverse transcription–PCR; UC, umbilical cord