text:
A method for soft programming memory cells and floating gate memory device. During soft programming, a gate voltage is supplied to the control gate, a drain voltage it supplied to the drain, a well voltage is supplied to the well, and an active current limiter is coupled to the source. A circuit for soft programming supplies a gate voltage to the control gate, couples a constant current source to the drain, supplies a well voltage to the well, and supplies a source voltage to the source. The gate voltage may be approximately 2 V, the drain voltage may be approximately 4 V, and the well voltage may be approximately -2 V. According to another embodiment of the invention, the gate voltage is approximately 2 V lower than the drain voltage, and the well voltage is approximately 4 V lower than the gate voltage.
1. A method for correcting an over-erase condition within a non-volatile memory array, comprising:
providing a non-volatile memory array having a plurality of single transistor memory cells, each memory cell comprising a stacked pair of control and floating gates spaced above a channel region interposed between a source and drain region; and
applying a first voltage to the control gate, an active current limiter to the source region, a non-positive voltage to the channel region, and a positive voltage to the drain region.
2. The method as recited in claim 1, wherein said providing step comprises patterning the stacked pair of control and floating gates from a stacked pair of polysilicon layers having a dielectric layer interposed therebetween.
3. The method as recited in claim 1, wherein said channel region comprises a portion of a single crystalline substrate material, wherein said portion is adapted to receive a non-positive voltage.
4. The method as recited in claim 1, wherein said non-positive voltage is a voltage having an absolute magnitude greater than 0.5.
5. The method as recited in claim 1, wherein said non-positive voltage is a voltage having an absolute magnitude greater than 1.
6. The method as recited in claim 1, wherein said positive voltage is a voltage having an absolute magnitude less than 5.
7. The method as recited in claim 1, wherein said positive voltage is a voltage having an absolute magnitude less than 4.5.
8. The method as recited in claim 1, wherein said first voltage is between -1 V and 6 V.
9. The method as recited in claim 1, wherein the active current limiter is a current mirror.
10. The method as recited in claim 1, wherein the active current limiter is an NMOSFET operating at saturation mode.
11. The method as recited in claim 1, wherein the active current limiter is a current source.
12. The method as recited in claim 1, wherein the active current limiter provides current in a range of 1.5 mA to 1.2 mA per 512 K memory cells.
13. The method as recited in claim 1, as a result of said applying step, inducing electrons onto said floating gate for neutralizing positive charge thereon.
1. Field of the Invention
This invention relates to floating gate memory devices, such as flash memory, and in particular to methods and circuits for repairing over-erased floating gate memory cells.
2. Description of Related Art
Non-volatile memory design based on integrated circuit technology represents an expanding field. Several popular classes of non-volatile memory are based on arrays of floating gate memory transistors which are electrically erasable and programmable.
The act of programming a memory array of floating gate memory transistors in one popular approach involves injecting the floating gate of addressed cells with electrons which causes a negative charge to accumulate in the floating gate and the turn-on threshold of the memory cell to increase. Thus, when programmed, the cells will not turn on, that is, they will remain non-conductive when addressed with read potentials applied to the control gates. The act of erasing a cell having a negatively charged floating gate involves removing electrons from the floating gate to lower the threshold. With the lower threshold, the cell will turn on to a conductive state when addressed with a read potential to the control gate. For an opposite polarity array, programming involves selectively removing electrons from the addressed cells' floating gates.
Floating gate memory cells suffer the problem of over-erasure, particularly when erasing involves lowering the threshold by removing electrons from the floating gate. During the erase step, over-erasure occurs if too many electrons are removed from the floating gate leaving a slight positive charge. The positive charge biases the memory cell slightly on, so that a small current may leak through the memory even when it is not addressed. A number of over-erased cells along a given data line can cause an accumulation of leakage current sufficient to cause a false reading.
In addition to causing false readings, when floating gate cells are over-erased, it makes it difficult to successfully reprogram the cells using hot electron programming, particularly with embedded algorithms in the integrated circuits. This difficulty arises because the program current will be large and, due to series resistance, the effective VDS across cell will drop so that the e- injection efficiency will decrease.
Further, because the erase and program operations can affect different cells in a single array differently, floating gate memory designs often include circuitry for verifying the success of the erasing and programming steps. See, for instance, U.S. Pat. No. 4,875,188, entitled VOLTAGE MARGINING CIRCUIT FOR FLASH MEMORY, invented by Jungroth. If the array does not pass erase verify, the entire array is usually re-erased. The re-erase process can aggravate over-erased cells in the array.
One solution to the over-erase problem associated with the erase verification process is disclosed in U.S. Pat. No. 5,414,664, FLASH MEMORY WITH BLOCK ERASE FLAGS FOR OVER-ERASURE PROTECTION, issued to Lin et al. on May 9, 1995, which shows a method and a device where only those blocks which fail the erase verify operation are re-erased. Accordingly, a re-erase of the entire array after each verify operation is not required. This mitigates the over-erase phenomenon, but does not solve it entirely.
Thus, a repair process has been developed to correct over-erased cells. U.S. Pat. No. 5,233,562, entitled METHODS OF REPAIRING FIELD-EFFECT CELLS IN AN ELECTRICALLY ERASABLE AND ELECTRICALLY PROGRAMMABLE MEMORY DEVICE, issued to Ong, et al., describes processes for such repair using so called drain disturb, source disturb or gate disturb techniques. After each repair in the Ong patent, a time consuming repair verification operation of the entire array is provided. See, also, U.S. Pat. No. 5,416,738 to Shrivastava for further background information.
Another attempt to solve the over-erase problem is described in U.S. Pat. No. 5,546,340, entitled NON-VOLATILE MEMORY ARRAY WITH OVER-ERASE CORRECTION, issued to Hu et. al. Hu describes a negatively biased substrate. Hu describes bulk correction of over-erased devices within in array. Hu describes bulk correction of an array of over-erased devices as carried forth in a convergence technique which utilizes higher floating gate injection currents.
A low current method of programming flash EEPROMS is described in U.S. Pat. No. 5,487,033, entitled STRUCTURE AND METHOD FOR LOW CURRENT PROGRAMMING OF FLASH EEPROMS, issued to Keeney et. al. Keeney indicates that a control gate voltage may be stepped or ramped from a minimum value to a maximum value to further reduce the peak channel current and to allow the flash cell threshold voltage to be placed to an exact value, for MLC applications.
For further discussion of a technique for correction of over-erasure of flash EPROMS, please refer to U.S. Pat. No. 5,467,306, entitled METHOD OF USING SOURCE BIAS TO INCREASE THRESHOLD VOLTAGES AND/OR TO CORRECT FOR OVER-ERASURE OF FLASH EPROMS, issued to Kaya, et. al.
In any case, the repair and repair verification processes are time-consuming. Therefore, a method and device which repairs over-erased cells in FLASH memory, and other floating gate memory, more quickly and efficiently is needed.
The present invention includes a method for soft programming memory cells and a floating gate memory device. During soft programming, a gate voltage is supplied to the control gate, a drain voltage it supplied to the drain, a well voltage is supplied to the well, and an active current limiter is coupled to the source.
An embodiment of the invention includes a circuit for soft programming that supplies a gate voltage to the control gate of a floating gate, couples a constant current source to the drain, supplies a well voltage to the well, and supplies a source voltage to the source.
According to one embodiment of the invention, the gate voltage is approximately 2 V, the drain voltage is approximately 4 V, and the well voltage is approximately -2 V. According to another embodiment of the invention, the gate voltage is approximately 2 V lower than the drain voltage, and the well voltage is approximately 4 V lower than the gate voltage.
An embodiment of the invention includes a method for correcting an over-erase condition within a non-volatile memory array. A method includes providing a non-volatile memory array having a plurality of single transistor memory cells, each memory cell comprising a stacked pair of control and floating gates spaced above a channel region interposed between a source and drain region. A non-negative voltage is applied to the control gate, an active current limiter to the source region, a negative voltage to the channel region, and a positive voltage to the drain region.
FIG. 1 is a schematic block diagram providing an overview of an integrated circuit according to an embodiment of the present invention.
FIG. 2A is a circuit diagram showing a segmented array architecture for a floating gate memory cell device.
FIG. 2B is a circuit diagram showing a segmented array architecture for a floating gate memory device, with a common well line and current limiter.
FIG. 3 is a flow chart showing soft programming.
FIG. 4 is a circuit diagram of a floating gate memory cell with bias voltages and current sink.
FIG. 5 is a diagram of a floating gate memory cell and a current limiter.
FIG. 6 is a flow chart illustrating a two stage soft programming process.
FIG. 7 is a timing diagram of a programming sequence.
A detailed description of preferred embodiments of this invention is provided with reference to the figures. The soft program of this invention may be part of an embedded erase sequence of a floating gate memory cell device, such a device including an array of cells arranged in blocks. The soft program generates pulses for quickly repairing over-erased cells block by block, while limiting the amount of current generated during the process.
During soft programming, a gate voltage is supplied to the control gate, a drain voltage it supplied to the drain, a well voltage is supplied to the well, and an active current limiter is coupled to the source. Embodiments of the invention have the advantage that usable electrons flowing from the current source are conducted to cells having lower VT, where cell conductance is much higher, increasing soft program efficiency.
The use of the active current limiter coupled to the source has advantages over approaches that use a ground or a constant voltage source coupled to the source or approaches that use a diode connection. The active current limiter also has advantages over approaches where a source bias is established by a diode connection, a series resistance, or feedback circuitry monitoring the flash cell's drain and gate. Unlike various prior approaches, using the active current limiter has an advantage of helping to keep electron flow constant.
FIG. 1 shows the basic structure of a 4 megabyte floating gate memory cell integrated circuit incorporating an embodiment of the invention. The circuit includes a memory array, generally 1, which is divided into a plurality of blocks (32 blocks in the figure). The segmentable architecture of the memory array allows application of the repair pulse of this invention to cell blocks individually, thus allowing block by block repair of over-erased cells. The array architecture is described in detail below with reference to FIG. 2.
Still referring to FIG. 1, coupled with the array 1 are a voltage bias/active current limiter, generally 6, and a read/program control/block erase/erase verify/repair circuit, generally 2. Voltage bias/active current limiter, generally 6, provide enhanced efficiency during soft programming. The read/program control/block erase/erase verify/repair circuit 2 is coupled to block erase flags 3. An address counter 4 is included for incrementing through memory cells, blocks or the entire array for the erase/erase verify/repair sequence.
The chip includes command logic 5 which is coupled to the address, data, and other control lines such as the output enable and chip enable signals. The command logic 5 interprets inputs to set a mode of operation for the voltage bias/active current limiter 6 and the read/program control/block erase/erase verify/repair circuit 2.
Command logic 5 may be implemented as done in standard floating gate memory integrated circuits, such as Am28F020 flash memory chip manufactured by Advanced Micro Devices, Inc. of Sunnyvale, Calif. with additional commands of this invention for cell, block, or array erase. In response to commands issued by the command logic 5, an embedded erase operation is executed by state machines in the read/program control/block erase/erase verify/repair circuit 2. The user, through a host CPU or otherwise, supplies address and data signals to the command logic 5 to indicate a preferred mode of operation. The modes executed by read/program control/block erase/erase verify/repair circuit 2 include a chip erase mode in which all blocks in the array 1 are to be erased and a block erase mode in which selected blocks in the array 1 are to be erased. In response to user input, blocks to be erased are identified by block or sector erase flags 3 stored on the chip.
FIG. 2A illustrates the details of a segmentable array architecture in a drain-source-drain configuration of the floating gate memory circuit in which this invention may be implemented, and like that described U.S. Pat. No. 5,399,891, entitled NON-VOLATILE MEMORY CELL AND ARRAY ARCHITECTURE, issued Mar. 21, 1995 which is incorporated by reference herein. Other array architectures may be used, as well.
The circuit includes a first local bit line 10 and a second local bit line 11 which are implemented by buried diffusion conductors. Also, included is a common source connection line 12 implemented by buried diffusion. A plurality of floating gate transistors have drains and sources coupled to the local bit lines 10, 11, and common source connection line 12. Any number of these floating gate transistors in a single block may suffer from over-erasure as a result of the erase step mentioned above, and in varying degrees.
The drains of the first column of transistors, generally 13, are coupled to the first local bit line 10, and the drains of the second column of transistors, generally 14, are coupled to the second local bit line 11. The gates of the floating gate transistors are coupled to word lines WL0 through WLN, where each word line (e.g., WL1) is coupled to the gate of a transistor (e.g., transistor 15) in the first local bit line 10 and a transistor (e.g., transistor 16) in the second local bit line 11. The transistors 15 and 16 can be considered a two transistor cell with a shared source diffusion.
The act of charging the floating gate is called the program step for the floating gate memory cell. This is accomplished on a byte by byte basis through hot electron injection by establishing a large positive voltage between the gate and the source, such as twelve volts, and a positive voltage between the drain and the source, such as six volts.
The act of discharging the floating gate is called the erase step for the floating gate memory cell. This is accomplished through the F-N (Fowler-Nordheim) tunneling mechanism between the floating gate and the source (source erase) or between the floating gate and the substrate (channel erase). The source erasing is performed by applying a positive bias to the source, such as twelve volts or seven volts, while the gate is grounded or negatively biased, such as minus seven volts. The channel erasing on a block basis is performed by applying a negative bias to the gate and/or a positive bias to the substrate.
Individual blocks of cells are controlled by select signals, that is, top block select signals TBSELA and TBSELB and bottom block select signals BBSELA and BBSELB. The individual control of the blocks provides the ability to apply a repair pulse to selected local bit lines 10 and 11.
Still referring to FIG. 2A, a first global bit line 17 and a second global bit line 18 are associated with each drain-source-drain block. The first global bit line 17 is coupled to the source of top block select transistor 19 through a metal-to-diffusion contact 55. Similarly, the second global bit line 18 is coupled to the source of top block select transistor 21 through a metal-to-diffusion contact 56. The drains of the top block select transistors 19, 21 are coupled to the first and second local bit lines 10 and 11, respectively. The gates of the top block selector transistors 19, 21 are thus controlled by a top block select signal TBSELA on line 23.
In a similar manner, the gate of the transistor 65A is controlled by a bottom block select signal BBSELA across line 26. The local common source connection line 12 is coupled to a terminal across conductor 54A through transistor 65A. The drain of the transistor 65A is coupled to the common source connection line 12. The source of the transistor 65A is coupled to the conductor 54A. In this architecture, the conductor 54A is a buried diffusion conductor which extends to a metal-to-diffusion contact 60A at a position displaced horizontally through the array, which provides contact to a vertical metal bus 25.
For sense amps and program data in structures, a data line 29 is coupled to the global bit lines 17 and 18 which extend vertically through the array to respective column select transistors 70, 71. Thus, the source of column select transistor 70 is coupled to global bit line 17, the gate of column select transistor 70 is coupled to a column decode signal Yn0, and the drain of the column select transistor 70 is coupled to data line conductor 29.
The blocks of floating gate memory cells as shown in FIG. 1 are configured into a plurality of subarrays as illustrated in FIG. 2A which illustrates two subarrays within a larger integrated circuit. The subarrays are divided generally along dotted line 50 and include subarray 51 A generally above the line 50 and subarray 51 B generally below the line 50. A first group 52 of cells is laid out in a mirror image with a second group 53 of cells along a given bit line pair (e.g., 17, 18). As one proceeds up the bit line pair, the memory subarrays are flipped so as to share conductors 54A, 54B (buried diffusion) and metal-to-metal diffusion contacts 55, 56, 57, 58. The conductors 54A, 54B extend horizontally across the array to a vertical metal line 25 through metal-to-diffusion contacts 60A, 60B. The subarrays repeat on opposite sides of the metal bus 25 so that adjacent subarrays share a metal bus 25. The metal bus 25 is coupled to array ground and erase high voltage circuitry. Thus, the subarray layout requires two metal contact pitches per column of two transistor cells for the global bit lines and one metal contact pitch for the metal bus 25.
Floating gate memory cells include wells 73A-73L. Well lines 72A-72C are shown in FIG. 2A. Well lines 72A-72C are for applying bias voltages to wells 73A-73L. Well line 72A is coupled to wells 73A through 73D. Well line 72B is coupled to wells 73E through 73H. Well line 72C is coupled to wells 731 through 731.
During a soft program pulse, a gate voltage is applied to gates of the floating gate cells via the word lines (WL0-n), a drain voltage is applied via bit lines 17 and 18, a well bias is applied via well lines 72a-72c, and an active current limiter is applied to the sources via a structure including transistors 65A-D and the additional circuitry shown in FIG. 5, which forms a current mirror. In such an architecture, transistors 65A-D of FIG. 2A each correspond to a transistor such as transistor 516 shown in FIG. 5. BBSELA and BBSELB each correspond to the line 540 in FIG. 5, which is coupled to the gate of transistor 516. Not shown in FIG. 2A are additional well lines for the other floating gates shown in FIG. 2. However, additional well lines are used to apply well bias voltages to the other wells. Transistors 65A, 65B, 65C, and 65D are also selector decode transistors. These transistors on their source sides are connected to a generator to support 0 volts or a positive voltage depending on the mode of operation.
In this approach, using an active current limiter rather than grounding the source, the power of the pumping circuitry can be better utilized as to program the over-erased cells and decrease the leakage current from most of the cells by orders in magnitude. In an alternative system, the gate voltage can be stepped to decrease the current contribution from the over-erased cells.
The sector decode ability provided by the circuit of FIG. 2A, allows the circuitry to be implemented which applies a drain disturb style soft program pulse only to selected segments of the array by applying about 4 volts to the local drain lines, while coupling the source to an active current limiter.
Also an alternative system will apply the soft program pulse of about 4 volts, or more depending on circuit parameters, through the source terminal of devices being soft programmed, while coupling the bit lines or drain terminals to an active current limiter. The same segment-by-segment decoding, and word line drivers can be utilized in this source disturb approach.
FIG. 2B is similar to FIG. 2A. FIG. 2B includes common well line 74. Common well line 74 allows application of a well voltage to multiple cells. Instead of transistors 65A-D, FIG. 2B includes switch 75 and an active current limiter 76. Active current limiter 76 is coupled to metal bus 25 via switch 75. Active current limiter 76 provides a current sink commonly to multiple cells throughout the array.
Referring to FIG. 3, an overall flow chart of a chip or block erase process, including the soft program steps of an embodiment of the invention, is shown. After starting the erase operation (step 80), pre-programming is initiated for the chip or block selected for erase, through a host CPU or otherwise through command logic 5 (step 81). At step 82, a program recovery period occurs allowing the voltage to settle out or stabilize after pre-programming. At step 83, a program verify process occurs. The system then checks to see if the last address in the chip or block has been preprogrammed (step 84). If not, the process starting at the pre-programming step is repeated until all cells in the chip or block have been preprogrammed.
After pre-programming, the erase operation at step 85 is executed which is followed by the erase recovery period 86 to allow the erase voltage to settle out. Next, an erase verify operation 87 is performed. Then, the system checks to see if the erase process is complete at step 88. If not, it returns to step 85, performing the erase operation until complete. When complete, the soft program at step 89 is initiated in which the soft program pulse is applied to all cells in the entire chip or block subject of the erase operation in parallel. The soft program step 89 includes applying a gate voltage to the gates, a drain voltage to the drains, a well voltage to the wells, and a constant source current to the sources. The soft program recovery occurs at step 90. The process ends at step 91.
FIG. 4 shows a floating gate memory cell configured for soft programming according to an embodiment of the invention. Floating gate memory cell 400 includes a control gate 401, a floating gate 402 under the control gate, a source 403, a well 404, and a drain 405. The cell 400 comprises a control gate and a floating gate from a stacked pair of polysilicon layers having a dielectric layer interposed between them. Gate switch 410 is coupled to control gate 401 and provides a control gate voltage of approximately 2 volts. Source switch 411 is coupled to source 403 and provides an active current limiter 420 to source 403. Well switch 412 is coupled to well 404 and provides a well bias voltage of approximately -2 volts to well 404. Drain switch 413 is coupled to drain 405 and provides a drain voltage of approximately 4 volts to drain 405.
The configuration shown in FIG. 4 allows for soft programming of floating gate memory cell 400. The soft programming causes hot electron injection of electrons onto the floating gate. In one embodiment of the invention the length (Lmask) of a cell is 0.6 micrometers, and the width (Wmask) is 0.4 micrometers. The tunnel oxide is 100 Angstroms, and the oxide nitrite oxide (ONO) layer is approximately 140 Angtroms. The floating gate cell is an n-channel transistor.
A triple well architecture is used for a cell. The triple well structure includes a deep N-well, a P-well, and an N-well. If the P-well is kept grounded, a twin well structure can be used. The P-well acts as a channel well and the deep N-well acts as the isolation well. During soft programming, the channel well can be biased to an non-positive voltage, while the isolation well is kept equal to or larger than VCC.
An advantage of use of an active current limiter is that usable electrons flowing from the source are conducted to lower VT bits where the cell conductance is much higher. Therefore, the soft program efficiency will be greater. The conductance modulation is through the charged source voltage and may be proportional to log10 {- VS +αG ΔVT (VSB)!/110 mV}, where αG is the gate coupling ratio. The active current limiter 420 applies a negative constant current to the source. The configuration shown has the additional benefit that the drain current could be supplied directly from VCC =5 volts, which may be larger than the current available from charge pumping circuitry. If VCC is lowered, the relative voltage can be changed accordingly. The use of a negative well bias will require another pumping circuit. If a positive pump circuit is used for the drain voltage, then the negative pump circuitry will not be needed. The difference between the drain voltage and the well bias voltage is important.
A fast VT convergence is desirable. The longer the soft program time, the tighter the VT convergence. The upper limit is the total sector electrical erase time. Initially bits (cells) will have a wider VT distribution, and the initial source voltage will be high. Optionally, a stepped or ramped word line voltage (gate voltage) may be used to change the drain to source voltage margin. The voltage between gate and source will affect the saturated value of converged VT.
Since the soft program current is also suppressed through the ΔVT (VSB) from body effect, the higher impurity concentration of a substrate is helpful. The high impurity concentration of the substrate will suppress the short channel effect and its related leakage. The drain coupling ratio, which may affect the leakage, may also be reduced. The drain coupling is a capacitance coupling effect from the N+ floating gate overlap.
More details regarding methods of soft programming floating gates are described in U.S. patent application entitled METHOD AND SYSTEM FOR SOFT PROGRAMMING ALGORITHM, application Ser No. 08/619,485, filed on Mar. 21, 1996, inventors: Yiu, et al., which is incorporated herein by reference.
FIG. 5 is a diagram of a memory cell and an active current limiter according to an embodiment of the present invention. The current limiter circuit corresponds to active current limiter 420 of FIG. 4. The current limiter switch includes transistor 510 coupled to VCC and Vload, rcsistor 512, transistor 514, and transistor 516. Iout is coupled to source switch 411. Vload is used to control the current from Iout. Iout is coupled to array VSS 520, which is coupled to sources of memory cells including memory cell 522. Also shown in FIG. 5 are wordline 526, array well 524, and drain line 528. With the configuration shown in FIG. 5, current is limited from the sources of memory cells in an array of memory cells.
A block of memory cells may be programmed simultaneously. To program a block of 512 K cells is simultaneously, the current limiter is constructed to cause the total current through the current limiter to be approximately 2 mA for the block. In an alternative embodiment, the current for the 512 K cell block may be less than 10 mA.
Turning to FIG. 6, another embodiment of this invention is shown. Optionally, as shown here, the repair pulse may be applied in two sequential steps. In the first step, the word line voltage is maintained at a first level about ground, and in the second step, the word line voltage is maintained at a second level about ground. FIG. 6 shows that during steps 607 through 610, the word line voltage is maintained at two different levels while the repair pulse is applied to the bit line.
First, step 607 provides that the word line voltage is maintained above ground, e.g. between 0.1 volts and 0.2 volts, for a period of time, e.g. approximately 100 milliseconds. The first stage of the repair pulse is maintained during step 608. By first applying a lower word line bias during the first soft program steps 607 and 608, the current of the "over-erased" cells is less than would occur with higher word line voltage, yet the majority over-erased cells are pushed toward being "normal cells" (i.e. they recover the threshold voltage to a better value). Thus, after the first soft program steps 607 and 608, some over-erased cells have been recovered and the second step can be applied. The second steps 609 and 610 include setting the word line voltage to about 0.6 V, which is applied for an additional period of time, e.g. approximately 100 milliseconds while the repair pulse is applied.
Accordingly, during the repair pulse, the word line voltage is driven in two stages, the first stage occurring during the 100 ms period while the word line voltage is maintained between approximately 0.1 volts and 0.2 volts, the second stage occurring during the 100 ms period while the word line voltage is maintained about 0.6 V. This two step process enhances the soft programming of the over-erased cells with less operating current and better operating efficiency.
The following table shows alternative values for a two-step soft programming process:
______________________________________3V Technology Source Is for a 512K Drain Gate cell block Substrate Time______________________________________1st step +5.5 V +2.5 V 1.5 mA GND 50 ms2nd step +5.5 V +3.1 V 1.5 mA GND 100 ms______________________________________
______________________________________5V Technology Source Is for a 512K Drain Gate cell block Substrate Time______________________________________1st step VCC 0 V 1.2 mA GND 50 ms2nd step VCC 0.6 V 1.2 mA GND 50 ms______________________________________
The following shows voltage and current ranges for soft programming:
______________________________________Drain Gate Source Substrate______________________________________<Drain Junction VGS > -1 V IS /512K cells ≦0 V <10 mABreakdow Voltage VDG > 2 V VSB > -0.5 VVDB < 8 V______________________________________
Accordingly, the method and circuit for substrate current induced hot e- injection for VT convergence at low VCC voltage have been provided. The method and circuit provide quicker and more efficient repairing of over-erased cells in a flash memory.
FIG. 7 is a timing diagram of one embodiment of a programming sequence. Voltage is applied to drain as shown by trace 700. A changing voltage is applied to the word line during programming as shown by trace 702. The drain and gate voltage may be applied simultaneously at each step, or the gate voltage may be applied first.
The foregoing description of embodiments of the invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations will be apparent to practitioners skilled in this art. It is intended that the scope of the invention be defined by the following claims and their equivalents.
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YIELD: Makes 8 first-course servings
ACTIVE TIME: 40 min
TOTAL TIME: 2 1/2 hr
Put oven rack in lower third of oven and preheat oven to 400°F.
Cut off stalks from fennel bulb. Chop enough fronds to measure 1/4 cup and discard stalks. Cut bulb (including core) into 1/4-inch dice.
Cook fennel bulb, scallions, and 1/4 teaspoon salt in 2 tablespoons butter in a 10-inch heavy skillet, covered, over moderate heat, stirring occasionally, until tender, about 10 minutes. Remove lid and cook until any liquid is evaporated, 1 to 2 minutes more. Transfer to a large bowl and stir in cheeses, eggs, semolina, fennel fronds, dill, pepper, and remaining 1/4 teaspoon salt until combined.
Melt remaining 6 tablespoons butter and brush springform pan with some of butter, then sprinkle bottom with 1 tablespoon bread crumbs. Unroll phyllo and cover stack with plastic wrap and a dampened kitchen towel. Working quickly, brush 1 phyllo sheet with some butter (keep remaining sheets covered) and gently fit it into springform pan, allowing ends to hang over. Rotate pan slightly, then butter another phyllo sheet and place on top (sheets should not align). Sprinkle with remaining tablespoon bread crumbs. Butter and fit 4 more phyllo sheets into pan, rotating pan for each sheet (overhang should cover entire rim).
Spread cheese mixture in phyllo shell.
Butter another phyllo sheet, then fold in half crosswise and butter again. Fold again (to quarter) and brush with butter, then lay over center of filling. Repeat with remaining phyllo sheet, laying it over folded sheet in opposite direction. Fold overhang toward center to enclose filling and folded phyllo, then brush top with butter.
Bake until puffed and deep golden brown, 40 to 50 minutes. Once pie is golden brown, loosely cover pan with a sheet of foil to prevent overbrowning. Cool in pan on a rack 5 minutes. Remove side of pan and continue to cool pie on rack.
Cut into wedges (leave bottom of pan under pie). Serve warm or at room temperature.
*Available at D. Coluccio & Sons (718-436-6700).
Cooks' note: Pie can be baked 6 hours ahead and kept, uncovered, at room temperature.


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Scott's finance chairman Mike Fernandez and the political committee switch
When Gov. Rick Scott peered up at the House visitors' gallery in his State of the State speech last week, he saw his wife Ann, their daughters, sons-in-law and grandchildren. Seated close by and joining in the applause was Mike Fernandez, a wealthy Cuban-American health care executive from Coral Gables and one of Scott's leading fund-raisers.
Fernandez has donated $1 million to Scott's campaign and serves as its co-finance chairman, and he has lucrative contracts under the state's Medicaid managed care program. In separate interviews, Scott and Fernandez said the contributions and contracts have no relation to each other.
"Whatever business Mike does with the state of Florida, he does on his own," Scott said. "He believes in what I'm doing. He believes in good government. If you listen to his story, he was escorted out of Cuba on a government plane ... He believes in the dream of America, which is what I believe in."
Of course, not everyone will believe that, and a $1 million check from Fernandez to Scott's Let's Get to Work committee won't end the talk. The mere size of the donation invites cynicism (all told, Fernandez has given $1.25 million to Let's Get to Work).
Continue reading "Scott's finance chairman Mike Fernandez and the political committee switch" »


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"Surface on the Lake" by Liz Jardine 1 1
Love this painting! This was reminiscent of a painting that was in my family growing up. I adore this and it looks amazing in my living room - we get tons of compliments on it. May 11, 2015
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- Organization
- Leadership
- Reports
Peter Gaytan, executive director of the Legion's Washington office, will represent the Legion at a roundtable discussion between the House Committee on Veterans' Affairs and veterans service organizations. Committee Chairman Jeff Miller is bringing VSO leadership together for a frank discussion regarding the challenges facing America's veterans and how to overcome those challenges.
Find out what else we are doing for veterans »


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Fails to fully import. Very annoying.
Fails to fully import. Very annoying.
I agree. I have run into the same issue. Left a few years! Now I am afraid to try again as I might get duplicate data. I wish some one could advices us.
I have the same issue, however it seems to cut off the latest week of posts. I export today and import it to the new domain I am moving to, and I have 2/28 as the last post.
This topic has been closed to new replies.


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The REAL Schoolhouse Rock Anthem.
Okay, so they're not really played at once. But this mashup of Katy Perry, LMFAO, Rihanna, One Direction, Carly Rae Jepsen, and more will make you question whether we aren't just listening to the same song on repeat whenever we turn on the radio.
"WhoopWhoop?" Is Zoidberg a closet Juggalo?


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Shrimp Curry For A Crowd
31 May 2009
Shrimp Curry For A Crowd is perfect for all the all the shrimp lovers out there. This flavors and texture of this shrimp curry is simple irresistible. Try this brilliant Shrimp Curry For A Crowd recipe!
|1⁄2 Cup (8 tbs)
|Chopped onion
|1 1⁄2 Cup (24 tbs), chopped
|Chopped celery
|1 1⁄2 Cup (24 tbs)
|Cleaned shrimp
|2 Pound (3 Pound In Shell)
|Canned applesauce
|1 Pound
|Condensed cream of celery soup
|4 Can (40 oz)
|Canned broiled sliced mushrooms
|6 Ounce (1 1/3 Cups, Undrained)
|Curry powder
|2 Tablespoon
|1⁄4 Teaspoon
Melt batter in 12 inch electric skillet preheated to about 300°.
Add onion and celery ; cook uncovered 5 minutes or till almost tender.
Lower heat to simmering (220° to 240°); add remaining ingredients; stir.
Simmer uncovered, stirring frequently, about 15 minutes.
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Shrimp Curry For A Crowd Recipe


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Be sure to visit the Arts Faculty's Summer Semester pages.
For summer semester, you can enrol after September 1st.
Note that it is not possible to enrol in Summer units via WES.
Your home faculty may ask you to have an Enrolment Amendment Form approved by the School of Philosophical, Historical and International Studies. If so, please call in to Room W604A in Building 11 (Menzies).
Summer semester officially starts in early November and ends with exams scheduled for early February. Summer off campus units run the same over summer as they do in semester 1 and 2, spread over 12 weeks.
There are no lectures or tutorials. Some units have recorded lectures and there is always someone available to help if it is needed.
Once you have the study materials for your unit, you are up and running and ready to make a start with your studies.
Philosophy units offered in off campus mode do not have timetabled contact hours. Introductory workshops (optional) may be held early in semester (whether Semester 1, 2 or Summer) and you're encouraged to attend. Additional workshops may be held if there is sufficient interest.
As an off campus student your exam location can be anywhere in the world and is dependant upon your home address. If you will be living away from your usual address during the exams you should plan ahead and amend your address accordingly.
Please note that we will be here all through Summer semester (excluding the Christmas closure) and you're most welcome to phone, email or call in with any queries.
If you have any queries, feel free to contact us or call in and see us … Carole and Monima will be happy to help.
|Flexible Learning Program
Philosophy Department
Ph: (03) 9905 3222
Fax: (03) 9905 3221
Email: email@example.com
|Flexible Learning Program
Philosophy Department
Room W604A
Building 11 (Menzies)
Monash University VIC 3800
Philosophy Flexible Learning
Several philosophy units are offered in flexible/OCL mode. Most of these units can be taken in any semester, … Continue reading Philosophy Flexible Learning
Resources for Undergraduate Students
Reference and Citation Rules If you are using someone else's work – from a book, … Continue reading Resources for Undergraduate Students
Undergraduate Studies in Philosophy Department
There are numerous good reasons for studying philosophy and the Department of Philosophy at Monash offers a … Continue reading Undergraduate Studies in Philosophy Department
Undergraduate Study in Human Rights
The Philosophy Department oversees the administration of the Human Rights area of study within the … Continue reading Undergraduate Study in Human Rights
Flexible Learning mode units
The following units are offered in Flexible Learning/OCL mode in Semesters 1 and 2 as well as … Continue reading Flexible Learning mode units
VCE Extension Program in Philosophy
The VCE extension program is offered by Monash to enable students in their last year at school … Continue reading VCE Extension Program in Philosophy


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Limiting surveillanceJuly 29,2014The New York Times said the following in an editorial:
The Senate is about to begin debate on a bill that could, at long last, put an end to the indiscriminate bulk collection of Americans telephone records and bring needed transparency to the abusive spying programs that have tarnished the nations reputation.
The bill, to be introduced on Tuesday by Sen. Patrick Leahy of Vermont, chairman of the Judiciary Committee, is a significant improvement over the halfhearted measure passed by the House in May. That legislation was notable for putting even Republicans on the record in opposition to the broad domestic spying efforts of the intelligence agencies, but its final version was watered down at the insistence of the White House.
Leahy said at the time that he wanted to write a stronger bill, and, after negotiating with the White House, he has. Both bills would stop the flow of telephone data into the computers of the National Security Agency, keeping the information with the phone companies, where it belongs. But the Senate bill takes a major step in limiting how much of that data the NSA can request.
It would require the agency to ask for the records of a specific person or address it is tracking, instead of conducting a broad dragnet of an entire area code or city in the hopes of turning up something useful. The government would have to show why it thinks the records it requests are related to a foreign terrorist agent. The vague language in the House bill could easily have been exploited by the agencys lawyers to conduct far more snooping on personal records than is really needed during a terrorism investigation.
The new bill would also make the process more transparent by requiring the government to disclose how many peoples data was collected by intelligence agencies, and how many of those people were American. It eliminates the one-year waiting period before a recipient can raise a legal challenge to a national security letter, which has been used as a form of extrajudicial subpoena by the FBI.
One of the best parts of the bill is a set of changes to the operation of the secretive Foreign Intelligence Surveillance Court, which is often asked to approve the governments intelligence actions. Currently the judges on the court hear the governments case without hearing an opposing side. Leahys bill would create a panel of advocates to argue before the court in support of privacy rights and civil liberties, and would require the court to issue public summaries of its decisions that specifically detail the impact on those rights.
The bill could have gone further in allowing the advocates to intervene in a case on behalf of surveillance targets, as a former judge on the surveillance court advocated recently. In addition, privacy advocates and other senators have backed a proposal requiring the government to get the courts permission before examining communications of Americans that were collected when tracking foreigners. (Spying on noncitizens does not require a judicial warrant, but sometimes that spy data also turns up the records of Americans.) Leahy should add that provision to his bill, following a similar amendment approved last month by the House.
Overall, the bill represents a breakthrough in the struggle against the growth of government surveillance power. The Senate should pass it without further dilution, putting pressure on the House to do the same.MORE IN CommentaryChristianity is in decline in the United States. Full StoryIn 1965, the City College of New York student government received a telegram from Dr. Full StoryI am writing this letter to the editor in response to an article written by Larry Wilfong... Full Story
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- RICHARD'S POOR ALMANACK: On this day 1739, 'Richard Palmer' identified in prison at York Castle as the notorious outlaw DICK TURPIN; IN 1836, Battle of the Alamo begins near San Antonio de Bexar, Texas; 1896, the Tootsie Roll invented by LEO HIRSCHFELD.
- RICHARD'S POOR ALMANACK: On this day in 1472, Orkney, Shetland islands put up as collateral by Norway to Scotland in lieu of dowry for MARGARET OF DENMARK on her marriage with JAMES III, king of Scotland; 1962, JOHN GLENN first American to orbit Earth.
- TOMORROW'S HEADLINES TODAY: City mayoral candidates debate campaign issues; Hartford, Conn., woman still missing; Neal Goswami reports attempts to legislate suicide; local woman loses 100 pounds through TOPS program.
- RICHARD'S POOR ALMANACK: On this day in 1878, JOHN TUNSTALL murdered near Lincoln, New Mexico, by the outlaw JESSE EVANS; in 1930, ELM FARM OLLIE first cow to fly in aircraft, first to be milked airborne; 1955, nuke test WASP; '79, snow in Sahara.
- TOMORROW'S HEADLINES TODAY: Rutland Herald News Editor Alan J. Keays and staff writer Gordon Dritschilo discuss stories planned for the February 18, 2015, edition of the newspaper: Winter budgets maxed, legal marijuana, Springfield bank job, USPS slowdown
- RICHARD'S POOR ALMANACK: On this day in 1249 AD, ANDRE of LONGJUMEAU is dispatched by LOUIS IX of France to meet the KHAGAN, ruler of the Mongol Empire; in 1804, during 1st Barbary War, STEPHEN DECATUR scuttles the pirate-held USS Philadelphia in Tripoli.


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Qayot designs Pac-Man stools
Those fond memories of watching a little munching man chase dots around a screen.
Well now you can relive those days with these kitsch stools - designed to look like the gaming hero that is Pac-Man.
These leather stools have been designed by Italian firm Qayot and have been named the Pouf-Man range (see what they've done there?)


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All it took to convince the cast to do 'Star Trek 4′ was a tremendous amount of money!
His role is steeped in mystery but my money's on The Gorn.
Beam me up, Angelo! (They're going for a more diverse cast this time. No, not really.0
'The Bourne Complacency"
A film about a neighborhood home to a Guy Fieri restaurant AND the flagship Sbarro can have my money any day.
He's far too busy for all of these sequels.
He was heads above the rest.
Summit is searching for a new director to poop on my childhood.
Director Bobby Glickert went from robot fluffer to sci-fi super-player.
Does it even count as 'narrowing down' if there are still 8 names left?
Megan Ellison won the war!
2 Fast, 2 Oscar-Worthy.
Let's all play!
Just how many cars were destroyed, director Justin Lin?
When he said "I'll be back," he meant "like seven or eight more times."
Justin Lin needs time to make a decision, OK?
Sometimes this job is really tough.
Since "The Great Arnold Schwarzenegger Tweet of 2011," offers have been coming in for the former Kindergarden Cop.
"Cranberry leather looks good on you.""I stole it from your closet after the sex we had together."We all knew this day would come, we were just waiting for the title. Vin Diesel, Paul Walker, and director Justin Lin are back for another Fast (fill it in) Furious, and they're naming this one after an instant scratchers lottery ticket. Fast Five, the fourth sequel in the franchise, promises more car chases, car crashes, Diesel and Walker disagreeing then agreeing on a plan of action, and latina cleavage.Fast & Furious made over $500 million at the box office so it's not surprising that Universal is rushing another one into production. I'm sure it didn't take long to get the key players together. An exec had to go over to Vin Diesel's place and get his okay, then stop by the dumpster outside where Paul Walker was eating breakfast. He threw a banana peel and scampered off, solidifying his involvement. (Variety)


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Alembic Exporter for DAZ Studio is confusing to me- (nothing new.) Does this work with, say, Lightwave? Is it just for animations? Totally lost. Below is the product description. It's 50% off plus you can use your PC coupon for another $6 off as it's a DO.
The Alembic format is used in production pipelines involving many of the top 3D modeling/animation applications.
With this exporter plugin for DAZ Studio you gain the ability to use DAZ Studio assets, as well as "Vertex Exact" animations, in your favorite 3D modeling/animation applications.
One possible pipeline where the Alembic exporter will be useful is when doing the following:
Animate a figure such as Victoria 6 in DAZ Studio
Export to Alembic format
Import Alembic file into preferred 3D application
Set up surfaces, lighting and cameras
The animation of Victoria 6 will deform exactly the same in the target 3D application as it did in DAZ Studio due to the way Alembic handles animation.


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New research suggests that a potential strategy for treating Duchenne muscular dystrophy (DMD) may be to increase levels of heat shock proteins inside muscle fibers.
Heat shock proteins exist naturally inside cells, where they assist in the folding and unfolding of other proteins. Their levels are increased when cells are exposed to various stresses, such as high temperatures.
The progress of several experimental therapies currently in development for neuromuscular diseases was discussed at MDA's 2012 Clinical Conference, held in Las Vegas March 4-7.
The Muscular Dystrophy Association has awarded $120,000 to Cambridge, Mass.-based Catabasis Pharmaceuticals as part of a strategic partnership under which the pharmaceuticals company will test two compounds called CAT-1004 and CAT-1040 in the mdx research mouse model of Duchenne muscular dystrophy (DMD).
New evidence suggests that relatively aggressive management of seemingly minor cardiac conduction defects in adults with type 1 myotonic dystrophy (MMD1, or DM1) can prolong survival.
Editor's note: This story was updated on April 27, 2012, and revised April 3, 2012.
More than 500 physicians, allied health care professionals and MDA staff attended the MDA's 2012 Clinical Conference in Las Vegas, March 4-7.
The program emphasized:
A March 2012 podcast from Nationwide Children's Hospital in Columbus, Ohio, presents the results of a phase 1 trial of gene therapy for gamma-sarcoglycan-deficientlimb-girdle muscular dystrophy (LGMD), also known as LGMD2C.
In type 1 myotonic dystrophy (MMD1, or DM1), expansions of DNA on chromosome 19 known as CTG repeats are converted to expansions in RNA called CUG repeats, which are toxic to nerve and muscles cells in a variety of ways.
Several MDA-supported research teams are targeting the toxic CUG repeats, with the goal of either blocking their interaction with other cellular substances or destroying them entirely.
Update 5/21/12: A podcast on this topic is now available; see Podcast Explores Newborn Screening for DMD.
Researchers at Baylor College of Medicine in Houston and Isis Pharmaceuticals in Carlsbad, Calif., have announced encouraging results for their antisense-based strategy in development for the treatment of type 1 myotonic muscular dystrophy (DM1, or MMD1).
Muscular Dystrophy Association — USA
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Chicago, Illinois 60606(800) 572-1717
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©2015, Muscular Dystrophy Association Inc. All rights reserved.


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Colin Kaepernick QB SF 6 months ago
Kaepernick completed 15-of-26 passes for 204 yards and two touchdowns in Sunday's 20-17 win over the Cardinals. He also rushed for 67 yards on 17 carries.
Kaepernick had one of his best passing games in weeks, but it was too little too late, as the 49ers end their disappointing season with just an 8-8 record. The young QB had a rough year, averaging a shade over 200 passing yards per game, while tossing only 19 touchdowns. It will be interesting to see how the new coaching staff handles Kaepernick next season, as Jim Harbaugh officially coached his last game Sunday.
Colin Kaepernick QB SF 6 months ago4 Comments
Kaepernick completed 15 of 24 passes for 114 yards and a touchdown in Saturday's overtime loss to the Chargers. He made his biggest impact on the ground, rushing seven times for 151 yards and another score.
A measly 4.8 yards per passing attempt isn't going to win any fantasy championships, but fortunately Kaepernick salvaged his fantasy stat line with a breathtaking 90-yard touchdown run in the third quarter. This is now four straight games under 200 passing yards for the 126 million dollar man, so unless he rips off a 90-yard run again next week, it's hard to consider him a strong fantasy option against the Cardinals.
Colin Kaepernick QB SF 7 months ago3 Comments
Kaepernick completed 11-of-19 passes for 141 yards and ran for 46 yards on nine carries in Sunday's 17-7 loss at Seattle.
Kaepernick was sacked six times, and failed to throw a touchdown pass against the Seahawks for the second time in three weeks. He had to deal with a couple of drops, but he also missed some throws as well, most notably to a wide-open Anquan Boldin in the second half that would have gone for a key first down. The 49ers were eliminated from playoff contention with the loss, so it will be interesting to see how they and Kaepernick respond this Saturday against the Chargers.
Colin Kaepernick QB SF 7 months ago7 Comments
Kaepernick completed 18-of-33 passes for 174 yards, with one touchdown and a pair of interceptions, in Sunday's 24-13 loss at Oakland. He was sacked five times, and ran three times for 26 yards.
Kaepernick made a couple of ill-advised throws, although he was under a lot of pressure throughout. Whether it's a lack of playmakers on offense, a failure to develop as a passer, or a combination of both, it's been an extremely disappointing season for Kaepernick and the entire 49ers' offense. It seems unlikely that things will all-of-a-sudden start clicking for San Francisco's offense, so don't expect Kaepernick to post big numbers next week against a defensive-minded Seahawks' squad.
Colin Kaepernick QB SF 7 months ago6 Comments
Kaepernick completed 16-of-29 passes for 121 yards, with no touchdowns and two interceptions, in Thursday's 19-3 loss to the Seahawks. He took four sacks and gained 17 yards on three carries.
The 49ers were completely unable to drive down the field, and both of Kaepernick's interceptions were ugly throws right into Richard Sherman's hands. There's really no way to sugarcoat this one, as Kaepernick played his worst game of a disappointing season. He did try to get things going with his feet outside of the pocket, yet still failed to crack 25 rushing yards for a sixth consecutive week. Kapernick has mostly been pretty good in easier matchups this season, but he's shown a complete inability to direct the offense against tougher defensive teams, at least since the end of September. He does get a favorable matchup in Oakland next week, though the game may not be conducive to a high volume of pass attempts.
Colin Kaepernick QB SF 7 months ago
Kaepernick completed 20-of-29 passes for 256 yards, with one touchdown and an interception, in Sunday's 17-13 win against the Redskins. He also had 14 yards on nine rushing attempts.
Kaepernick had some nice numbers, completing 69 percent of his passes with an 8.8 YPA, but it did not translate into fantasy production. He did suffer through some miscues from teammates, however, as Michael Crabtree and Vernon Davis each dropped catchable balls on what would have been long pass plays. He'll have a tough test this week against Seattle on Thanksgiving, but at least the game will be at home.
Colin Kaepernick QB SF 8 months ago9 Comments
Kaepernick completed 15 of 29 passes for 193 yards and a touchdown, while adding 24 rushing yards on eight carries in Sunday's win over the Giants.
Kaepernick connected with seven different receivers, throwing his lone touchdown to wideout Michael Crabtree. While Kaepernick has failed to rush for a touchdown this season, he has thrown for at least one in every game. And while he has only one touchdown in each of the last four games, Kaepernick could break the streak in Week 12, as the 49ers face off against a Redskins defense that has allowed more passing touchdowns than all but two teams this season.
Colin Kaepernick QB SF 8 months ago4 Comments
Kaepernick completed 14 of 32 passes for 210 yards and a touchdown Sunday against the Saints. He also added four carries for 24 rushing yards but lost a fumble.
51 of Kaepernick's 210 yards came on a huge play on fourth-and-10 late in the fourth quarter that set up Phil Dawson's game-tying field goal to send it into overtime. Kaepernick still hasn't rushed for a touchdown this season, and he has only a single passing score in three straight games, as his passing yards have decreased in each game over that span. Things may turn around from the yardage standpoint in Week 11, as the 49ers will face a Giants defense allowing the fifth-most passing yards per game this season.
Colin Kaepernick QB SF 8 months ago13 Comments
Kaepernick completed 22-of-33 passes for 237 yards and a touchdown in Sunday's 13-10 loss to the Rams. He also lost a pair of fumbles, including a costly one at the goal line in the closing seconds of regulation.
Kapernick put the 49ers in a position to win in the final minute, but lost the ball while trying a QB sneak from the Rams' one-yard line with under 10 seconds left. While it wasn't a terrible game from Kaepernick, he was sacked eight times, and didn't make a lot of big plays. The young QB has a chance to rebound from a fantasy perspective next week in a possible shootout at New Orleans.
Colin Kaepernick QB SF 8 months ago
Kaepernick completed 24-of-39 passes for 263 yards, with a touchdown and an interception in Sunday's 42-17 loss to the Broncos. He added 18 yards on three carries.
Kaepernick kept his team in the game with an excellent second quarter, but his ugly interception after halftime contributed to the 49ers getting outscored 21-0 in the third quarter. He padded his stats with a long drive in garbage time that didn't result in points, but it was Blaine Gabbert who led the 49ers to a meaningless fourth-quarter touchdown on the team's final possession. The unstoppable Denver offense forced the 49ers to go pass-heavy, and the Broncos' pass-rushing duo of Von Miller and DeMarcus Ware hassled Kaepernick all night. Though he's been inconsistent even in favorable matchups this season, Kaepernick should find a Week 9 tilt with the Rams more to his liking, after the 49ers have a bye week.


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Specs and Warranties
Stingray Spec Sheet ( Click on image to see Spec Sheets in more detail )
Connect Spec Sheet
Vista Spec Sheet
Trilogy Spec Sheet
Returns and Warranties
For full T's and C's please see Tick Box link upon Check out
6 Week Return Policy (standard distance selling terms).
Products can be returned, unused within this time period and fully refunded.
1 Year Product Warranty
Ensures that product will be in full working order upon delivery and will be of a quality which, within parameters of reasonable* use, is guaranteed for this period. If a manufacturing defect occurs within this time, the product can be returned for repair/exchange
*Reasonable use does not include damage caused by behaviour that would cause damage to a conventional tent or are outside the guidelines as stated in the Tentsile Instructions: No usage of fire in or around the tent, no use of sharp objects including but not limited to, knives, tools etc, shoes should not be warn inside the tent.


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Getty Images
Logline: Rebel Wilson writes and co-stars as one of three nerdy female friends who embark on a quest to make every Friday night, you guessed it, super fun.
Why we're interested: Since CBS passed on Wilson's first go at this show last season, our appetite for her has only grown, thanks to a star-making turn in last fall's "Pitch Perfect." Thankfully, ABC snatched this one up, transitioned it to a single-camera format, and replaced key characters. (So long, Jenny Slate. Welcome, Liza Lapira!) Out fingers are crossed that this second iteration finds a place on the Alphabet network's schedule this fall.
-- Billy Nilles, Zap2it
Search This Weekend's Events
CTnow.com, 285 Broad St., Hartford, CT 06115
A Hartford Courant website


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Awakening Works, LLC is located in Seattle, Washington.
200 West Mercer Street
Queen Anne Square, Suite 201
Seattle, WA 98119
p: 206.357.2735
If you are interested in scheduling an appointment, the quickest way to hear back from us is by using the contact form below. Also, please note what type of session you're interested in and what window(s) of time work best. It will really expedite the process.
[gravityform id="1″ name="Contact" title="false" description="false"]
Before requesting an appointment, please note we are not licensed therapists or counselors and do not accept medical insurance. If you are interested in seeing a practitioner who accepts insurance, please see our resource section and contact the practitioners directly to inquire about their payment options.


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Originally written on Fox Sports Southwest | Last updated 2/6/13
Texas Rangers general manager Jon Daniels might have spoken too soon in his Tuesday media conference call. Daniels said that Jurickson Profar, the No. 1 prospect in baseball, had informed the club that he had decided not to play in the World Baseball Classic for the Netherlands this year. Once word got back to Profar's native Curacao Tuesday of that decision, Profar is now rethinking his decision. "24 days till the first game excited to play with guys I grew up with @jonathanmamba46 @andrelton," Profar tweeted Wednesday. That may or may not happen. Mike Daly, the team's director of international scouting, talked with Profar Wednesday. Profar said he'll now wait until he gets to spring training with the Rangers next week before he makes his decision. Two weeks ago Profar said he was excited about playing in the WBC but was unsure if he would play. He said it was more important for him to make the Texas roster.
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This Easy Steam mop gathers up dirt and dust off tiles, vinyl, and sealed hardwood floors using steam and a washable microfibre cleaning pad. The easy-to-use contraption requires only a top-up of tap water before it's ready to go in 30 seconds, and has a five-metre power cable to easily reach dusty corners.
Choose from the following options for Easy Steam mop:
- £34.99 for mop in white, red, green, or yellow
- £40 for mop and three additional micro fibre mop pads in white, red, green, or yellow
See here for Groupon Goods Global GmbH's returns information
The discount on this deal was calculated using the original selling prices of £80 and £94.99. The original selling prices are based on a comparable online retailer, where the products were being sold for £80 and £94.99. These prices were checked on 7 October 2013 at 5.54pm.


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#CineBecks Pick #2 - Fantastic Man : A Film About William Onyeabor
What sort of f***wit brings a white plastic patio chair to a gig?
Can you identify these pixelated album covers?
Song Club #264
An All-Irish Playlist For The All-Ireland
11 things you *probably* didn't know about Fleet Foxes' Debut album.
Good News For David Bowie Fans
Souled Out Playlist 29th June 2015
WIN: Amy Winehouse Fans This One Is For You
Can You Spell A-C D-C
Saturday Lunch playlist, 27th June 2015
Hot singles are in your area now, waiting to be listened to
Dublin Rock Radio Limited T/A TXFM, Marconi House, Digges Lane, Dublin 2 Tel: (01) 4218651 Email: email@example.com Registered in Ireland No: 387609 / Registered for VAT: 6407609O Ratecard | Sponsorship & Promotions | Get In Touch | About TXFM | Terms & Conditions | Privacy Policy | Google+ | buyandsell.ie | Streamed by gocaster


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Show quality 1938 packard six all original car with fresh service and new tires . runs and drives excellent straight 6 cylinder flat head... More
Complete Nut and Bolt Restoration Original Sheet Metal and Floors 233 Straight Eight/3 Speed Manual Functional Rear Windows/Heater/Artillery Wheels Presented in the proper Buick colors of Moderne Grey... More
You are looking at a restored 1930 Ford Model A Coupe. This Ford is powered by a 201 cubic inch Four cylinder engine. The... More
1931 FORD Five Window Coupe This 1931 FORD FIVE WINDOW COUPE, is Henery Ford Steel Body with Brookville Steel Fenders. Lets start with a 3"... More
``AMAZING`` !!...1932 Chevrolet ``Confederate`` Special Sedan. A Top notch restoration...46 miles fresh !! ..Multi show winner !!! 2 time national award winner, AACA... More
1937 DKW SB200 MotoeXotica is proud to announce another vintage motorcycle to our inventory, a very original and rarely seen 1937 DKW SB200. Once the world's... More
"Ask the Man Who Owns One." For most of Packard's 58-year life, the slogan was an integral part of the company's existence. No mere... More
West Coast Classics are proud to present an absolutely stunning all steel 1930 Ford Model 'A' custom Roadster Hot Rod which is titled as... More
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1930 Ford Model A Deluxe Roadster For Sale or Trade Lovely Model A roadster that drives well and was meticulously restored and preserved by long-time... More
There are those who say that interest in pre-war cars is waning, but this 1930 Model A will always have a ready, willing, and... More
GR Auto Gallery is pleased to present this 1931 Ford Model A 5-window Coupe with a rumble seat for purchase. The successor to the... More
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Magnificent original Ahrens-Fox CT4 Triple Pumper! Very rare 1 of approximately 5 built featuring a massive 935ci Inline 6 cylinder valve-in-head engine and 6... More
This beautiful Hudson is in immaculate condition! As you can see from the pictures, it's in flawless condition. The paint, interior and frame/Chassis is... More


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For its opening act of the 2009 season, the Westhill softball team immediately got engaged in the sort of contest that tests one's willpower.
And the defending Section III Class B champion Warriors passed that test, needing a run in the top of the eighth inning to beat West Genesee 1-0 in Camillus.
Many stars are back from Westhill's 2008 title team, none more important than pitcher Toni Secreti, who would find herself in a fierce mound duel with the Wildcats' Ashley Amidon.
Over the course of seven regulation innings, Secreti kept WG hitters in check -- but Amidon did the same against the Westhill bats, a 0-0 duel that stretched into extra frames.
Finally, in the top of the eighth, the Wildcats blinked, as Shannon Flattery's double brought home the game's only run. Brittany Kizer and Jordan Arsenault also doubled in the Warriors' winning effort.
Meanwhile, Secreti surrendered five hits, but they were all singles. What's more, Westhill did not commit an error, while WG got three errors.
As this was going on, Bishop Ludden flattened Tully 14-0, doing so with pitchers Grace Rooney and Korky Kibling combining on a no-hitter.
No doubt, Rooney (who pitched at CBA before transferring to Ludden) and Kibling were helped by error-free defense on Ludden's side, plus an attack that got four runs in the first, fourth and fifth innings.
Rooney yielded a potent bat, smacking a home run and double and finishing with three RBIs. Kibling and Kim Balla also drove in runs, though many of Ludden's tallies came from a porous Tully defense that picked up nine errors.
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» Features
Threads of Lao tradition
Publication Date : 01-11-2012
Carol Cassidy's works are more than just textiles; woven among the vibrant silk are the threads of her passion for the craft, her efforts to preserve traditions, and her determination to empower struggling communities.
Hailing from the United States, Cassidy has been based in Laos for the last 23 years, where she established her own textile business to preserve and nurture the tradition of hand-weaving silk. Lao Textiles has helped to not only to introduce traditional Loatian weavings to a global market, but also provided scores of women with a means of livelihood – and perhaps even more importantly, empowerment.
The first American to own a business in the country, she was granted permission by the government to set up her company in 1990. After spending years building a relationship with rural silk farmers, she now wholly relies on them for her supply of domestic silk.
Cassidy calls Laos "a weaver's paradise". "It has both a rich history in design and weaving techniques, and weaving is a national treasure here," she says.
Over the years, her works have become renowned for incorporating and reinterpreting traditional Laotian colours, images, symbols and myths with a contemporary aesthetic, as well as using ancient local weaving techniques with a markedly artistic touch.
"We work with ancient and complex weaving techniques that include brocade, tapestry and ikat. I also experiment with new and original combinations; my goal is to create original designs with ancient methods."
A recognised Guggenheim Studio Artist, Cassidy's works have been shown at various prestigious exhibitions around the world, including the Fashion Institute of Technology in New York, and the Museum of Craft and Folk Art, San Francisco, in the United States. Her textiles will also be featured in a group exhibition, Out Of Southeast Asia: Art That Sustains, at the Textile Museum in Washington DC next April.
Her weavings, currently on show at Glorious Weaves at Shalini Ganendra Fine Art gallery in Petaling Jaya, are a gorgeous example of her ability to fuse the traditional and the modern. It is on until November 10.
"I love discovering hidden meanings in the animist pieces of historic Lao textiles," Cassidy says. "I also love exploring their motifs and the way they tell a story, reflect dreams and reveal the weavers' beliefs. I try to honour their work by revisiting their story and telling it again in a different way."
She goes on to explain that some of her pieces begin with an exact replica of rare, historic Lao fabrics, which she then re-stylises, interprets and modifies, while other designs are purely contemporary yet inspired by nature and her surroundings in Laos.
"My passion for weaving over the past 40 years has given me experiences that are unique. I have intense focus on colour, details and design. My work often employs a complex construction but has a simplicity.
"Over two decades in Laos has seen my designs evolve. Most importantly, our senior Lao designers embrace this creative spirit as well."
Even from the beginning of her career, Cassidy's craft seems inextricably linked to rural communities and their development. Having studied weaving in Norway and Finland, she then completed degrees in fine arts, political science and women studies at the University of Michigan.
She then worked for eight years as a textile/fibre consultant for development programmes that improved the lives of indigenous women in southern Africa. On a CARE project, she trained women in Lesotho to produce hand-spun mohair yarn for export, and later, on a rural development project for the United Nations, she helped set up sustainable cottage industries for women in rural Lesotho, Botswana and Zimbabwe.
It was her work with the UN that initially brought her to Vientiane, Laos, where she worked as an advisor on a weaving project. The rest, is weaving history.
Cassidy's efforts in the field of Laotian weaving extend beyond simply raising the craft's profile; indeed, she contributed towards reviving the country's weaving industry as a whole.
For this, Lao Textiles was given the Product Excellence Award by Unesco in 2001, and the first Preservation of Craft award from Aid to Artisans in 2002.
She continues to advise the UN and other development agencies on income-generating activities for rural women, and shares her model of success with weavers, artisans and audiences throughout the world.
Cassidy's work has also made a tremendous impact on the lives of the Laotian female weavers she employs.
"I have worked with a generation of Lao women weavers who have enjoyed a lifetime of professional employment and all the benefits that come with it – better education for their children, better health, and improved life conditions," she says, adding that she feels privileged to witness the transformation she sees in the community.
"In our 23 years in business in Laos, we have mostly the same staff, and we've watched our young weavers of 19 or 20 get married, have children, build houses and become middle-aged with family."
Cassidy is convinced that textile traditions in Asia play a vital role in national identity as well as community building. Having advised weavers in Assam in northeast India, Nepal, Tibet, Bhutan, Vietnam and Myanmar, among other countries, she has been working closely for the last several years with a group of weavers in Cambodia who are landmine survivors.
"There is a great need and urgency in South-East Asia to focus on preserving textile traditions and other traditional crafts. Textiles are at the heart of many cultures here. I hope that my voice and experience can help play a role in raising awareness," she says.
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● TOKYO: 'Eki-naka' convenience rush to Tokyo
● TOKYO: Boy's death draws attention to washing machine safety issues
● SEOUL: Korea's working moms worn out on weekends
● EDMONTON, Canada: Nadeshiko make World Cup final
● MANILA: Isabel Preysler's new man
● ALMATY, Kazakhstan: A country of horses
● MANILA: Pacquiao may be back in ring in 2016
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● BALI/ BANDUNG: A mecca of natural wonders
● BAGAN, Myanmar: Bagan waits for Unesco nod
● TOKYO: How weather changes affect your health
● TOKYO: Japanese robots aren't much help in disasters
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● MANILA: 6.1 quake jolts Philippines' central and southern regions
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● HANOI: Vietnam's leaders welcome Clinton, laud role in normalisation of US ties
● KUALA LUMPUR: Beware of smartphone obsession, sister of M'sian ISIS recruit warns
● HONG KONG: 'Make opposition pay in elections'
● MEDAN/SEMARANG: PLANE CRASH: Families urge release of bodies
● KUALA LUMPUR: Najib didn't take our money, insists 1MDB
● MANILA: Millions of Filipinos don't have access to clean water, toilets—report


text: A few highlights from the final round of the 2013 USADGC, with interviews from Steven Jacobs who finished 2nd place from the second card, and 2013 Champ Raymond Oberley Jr talks about his final round and what was going through his head. The video also features the entire final round of the lead card with nearly every shot. Congrats to all of the competitors for a well played event, it was truly a pleasure to be experience it!


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Presumptive GOP presidential nominee Mitt Romney also condemned Akin's statement Monday, as did Obama. Echoing Cornyn, Romney said Akin "he should spend 24 hours considering what will best help the country at this critical time." Sens. Scott Brown, R-Mass., who is up for reelection this year and Sen. Ron Johnson, R-Wis., who backed businessman John Brunner against Akin in the Missouri GOP primary also called on Akin to withdraw, as did New Mexico Senate nominee Heather Wilson. Other Republicans senators were expected to issue similar calls Monday.
Don't Miss Today's Top Stories
Rick, Executive Director for Policy
Concise coverage of everything I wish I had hours to read about."
Chuck, Graduate Student
The day's action in one quick read."
Stacy, Director of Communications
I find them informative and appreciate the daily news updates and enjoy the humor as well."
Richard, VP of Government Affairs
Chock full of usable information on today's issues. "
Michael, Executive Director


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Irish writer of:
Irish American Fantasy:
Kate and the Raptor Dinosaurs
Druids Raptors and Egyptians
The New York Druid
The Chicago Druid and the Ugly Princess
The San Francisco Leprechauns
The Boston Druid and the Wizard
Other Novels:
Hard Boiled/Irish humor:
Dark Drink and Conversation
More Dark Drink and Conversation
The Irish Detective
Love on the Dark Side of the City
Twisted Love and Money
These books are also available on Amazon.com (print) and Kindle, Barnes and Noble etc,.
Review by:
Monique Ferrer
on May 15, 2013 :
After reading the story, I had one thought.. What the hell was that about?!?
(review of free book)


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Graeme Hart Tops New Zealand's Rich List, Chandler Advances
July 28 (Bloomberg) -- Graeme Hart, owner of the world's second-largest drink-carton maker, retained his position as New Zealand's richest person, with an estimated NZ$6.5 billion ($5.7 billion), according to National Business Review's 2011 Rich List.
Hart's wealth rose from NZ$5.5 billion a year earlier, the Review said. He has topped the list in nine of the past 10 years. Last month, his Reynolds Group Holdings Inc. said it planned to borrow $5 billion to buy York, Pennsylvania-based Graham Packaging Co., a plastic container company with customers such as PepsiCo Inc.
Second on the list is Richard Chandler, who's wealth has surged to NZ$4 billion from NZ$1.4 billion a year earlier. The Singapore-based investor this month raised his stake in Sino-Forest Corp., the Chinese tree-farm operator, to 15 percent.
The Todd family, with an estimated NZ$2.7 billion through closely held Todd Corp. is third on the list. They have interests in New Zealand's largest oil and gas fields, as well as in media and coal mining. Eamon Cleary, who owns Southland dairy farms and commercial property in Queenstown, is worth an estimated NZ$2 billion and ranks fourth.
Lynette Erceg, who sold her late husband Michael's Independent Distiller Group company in 2006 and has reinvested in wine and property, is fifth with NZ$1.5 billion. Dubai-based Christopher Chandler, Richard's brother, is equal fifth with NZ$1.5 billion, the Review said.
The 2011 list includes 151 entrants with a combined wealth of NZ$45.2 billion, up from NZ$38.2 billion last year.
To contact the reporter on this story: Tracy Withers in Wellington at firstname.lastname@example.com.
To contact the editor responsible for this story: Iain Wilson firstname.lastname@example.com


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Scientists discover secret of more precise carbon dating
A number of sediment cores and plant fossils from Japan's Lake Suigetsu will provide scientists with more accurate benchmarks for carbon dating the oldest objects, according to a statement from Oxford University's Radiocarbon Accelerator Unit.
Professor Christopher Ramsey, his doctoral student Richard Staff and chemist Dr Fiona Brock worked with the NERC facility at East Kilbride, Scotland, and Groningen in the Netherlands to extract the lake's radiocarbon record as part of an international research team led by Professor Takeshi Nakagawa of Newcastle University, whose main focus has been studying cores for clues about past climate and environmental change.
Although the ultimate goals of the larger research group are to examine climate change, the data gathered by the team may illuminate many mysteries of science. Certainly, the Radiocarbon Accelerator Unit has been able to take advantage of the large amounts of data necessary for Professor Nakagawa's exploration of climate change as a means of refining the complex method of carbon dating.
The process of radiocarbon dating relies on the known rate at which radioactive isotopes decay and measuring the remaining amount of radiocarbon within a sample. This ratio provides scientists with a precise estimate of how old a certain artifact might be. Complications in these calculations arrive from how the initial radiocarbon in the environment varies from year to year and from one part of the global carbon cycle to another.
Therefore, carbon dating often has a wide range, which could stretch anywhere from a couple hundred to a few thousand years. To help resolve this, the ratios of each unknown artifact are compared against other known artifacts and means of measurement in order to more accurately pinpoint the date.
"In most cases the radiocarbon levels deduced from marine and other records have not been too far wrong. However, having a truly terrestrial record gives us better resolution and confidence in radiocarbon dating," said Professor Ramsey.
Previously, the longest and most important radiocarbon dates have come from marine sediments of cave formations. Now, however, even these dates have been corrected and a more direct record of radiocarbon from the atmosphere will assist scientists in narrowing the range of radiocarbon dating.
Using what Oxford University calls beautifully preserved layers of sediment from the bottom of Lake Suigetsu, where organic material has lain undisturbed for tens of thousands of years, scientists have been able to narrow down the accuracy of carbon dating the oldest artifacts.
"This record will not result in major revisions of dates. But, for example in prehistoric archaeology, there will be small shifts in chronology in the order of hundreds of years," said Professor Ramsey.
Researchers typically use a composite records called IntCal to identify the ages of objects, according to their radiocarbon measurements. Researchers are likely to incorporate data from Lake Suigetsu into the latest iteration of IntCal.


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Sugar to Stay Steady as Brazil Cane Crop Falls, HSBC Says
Nov. 21 (Bloomberg) -- Sugar prices are likely to remain around current levels as the cane crop declines in top global producer Brazil, according to HSBC Global Research.
Cane output in the Center South, Brazil's main producing region, will be 488.5 million metric tons in the 2011-12 season that started in March, according to industry group Unica. That compares with 556.9 million tons a year earlier.
"In the near term, sugar prices should remain near current levels as the weak Brazilian harvest offsets improvements in Northern Hemisphere production," Pedro Herrera, a Latin America agribusiness analyst at HSBC, wrote in a report e-mailed today.
Raw sugar is unlikely to fall below 20 cents a pound, according to Herrera, who singled out that level as the cost of production. He cited the "weak" harvest in Brazil, a "low probability" of unrestricted sugar exports from India and higher output costs. The Asian nation is the world's second-biggest sugar producer.
Prices are set to weaken in the "medium term" as larger crops in the European Union, Russia, India and the Black Sea region leave supply outpacing demand, according to the bank.
"We expect improvements in the Northern Hemisphere harvests to provide a sugar surplus," Herrera said. "The peak of sugar prices may be behind us."
White, or refined, sugar for March delivery advanced 0.3 percent to $625 a ton by 11:42 a.m. on NYSE Liffe in London, leaving prices down 20 percent this year. Raw sugar for March delivery rose 0.5 percent to 24.08 cents a pound on ICE Futures U.S. in New York, for a 25 percent annual drop.
To contact the reporter on this story: Isis Almeida in London at firstname.lastname@example.com
To contact the editor responsible for this story: John Deane at email@example.com


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Getting Down to Business: The Origins of Tattoo Charlie's Signature Ink
Louisville's Flavorman Talks Business
Getting Down to Business: The Origins of Shively Sporting Goods
Getting Down to Business: The Origins of Highland Cleaners, a Clothes Workhorse
Start-up Success: Wild Eggs Egged on Toward Success
Let us serve you an appetizer and socialize with you. We don't bite, promise.
Muth's Candy Clan
Margie Richmond, theater star, is a aregular fixture at Village 8.
Here, we round up the six players in town that have us craving a cold one.
You won't have much time to dawdle at any of these 23 bars if you want to complete our rendition of the Bambi Walk.
Thirsty for some local flavors, we went to six bartenders and requested they invent drinks based on historic local events and people.
Maggie Heely, a licensed marriage family therapist in the state of Kentucky, offers advice.
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Natural disasters such as tornadoes, thunderstorms, and winter storms may impact campus at any given time. It is important to recognize the difference between the following weather definitions:
- Watch – Conditions are favorable for the development of severe weather. Closely monitor the situation.
- Warning – Severe weather has been observed. Listen closely to instructions provided by officials.
In addition to natural hazards, the University of Richmond has the potential for impact from human-caused events such as an active shooter or hazardous materials incident.
An earthquake is the sudden, rapid shaking of the earth, caused by the breaking and shifting of subterranean rock as it releases strain that has accumulated over a long time. An earthquake and its terrible aftereffects is one of the most frightening and destructive phenomena of nature.
For additional information about what to do before, during, and after an earthquake. visit http://www.ready.gov/earthquakes .
Tornadoes are nature's most violent storms. Spawned from powerful thunderstorms, a tornado appears as a rotating, funnel-shaped cloud that extends from a storm to the ground with whirling winds that can reach 300 miles per hour. Damage paths can be in excess of one mile wide and 50 miles long. Every state is at some risk from this hazard. Some tornadoes are clearly visible, while rain or nearby low-hanging clouds obscure others. Occasionally, tornadoes develop so rapidly that little, if any, advance warning is possible. Before a tornado hits, the wind may die down and the air may become very still. A cloud of debris can mark the location of a tornado even if a funnel is not visible. Tornadoes generally occur near the trailing edge of a thunderstorm. It is not uncommon to see clear, sunlit skies behind a tornado.
For additional information about what to do before, during, and after a tornado, visit http://www.ready.gov/tornadoes.
Winter storms can range from a moderate snow over a few hours to a blizzard with blinding, wind-driven snow that lasts for several days. Many winter storms are accompanied by dangerously low temperatures and sometimes by strong winds, icing, sleet and freezing rain.
One of the primary concerns is the winter weather's ability to knock out heat, power and communications services sometimes for days at a time. Heavy snowfall and extreme cold can immobilize an entire region.
The National Weather Service refers to winter storms as the "Deceptive Killers" because most deaths are indirectly related to the storm. Instead, people die in traffic accidents on icy roads and of hypothermia from prolonged exposure to cold.
For additional information about what to do before, during, and after a winter storm, visit http://www.ready.gov/winter-weather.
Floods are one of the most common hazards; however, not all floods are alike. Some floods develop slowly, while others such a flash floods, can develop in just a few minutes and without visible signs of rain. Additionally, floods can be local, impacting a neighborhood or community, or very large, affecting entire river basins and multiple states. If you come across a road covered by water, TURN AROUND, DON'T DROWN!
For additional information about what to do before, during, and after a flood, visit http://www.ready.gov/floods.
All thunderstorms are dangerous. Every thunderstorm produces lightning. While lightning fatalities have decreased over the past 30 years, lightning continues to be one of the top three storm-related killers in the United States. Other associated dangers of thunderstorms include tornadoes, strong winds, hail and flash flooding.
For additional information about what to do before, during, and after a thunderstorm, visit http://www.ready.gov/thunderstorms-lightning.
A hurricane is a type of tropical cyclone or severe tropical storm that forms in the southern Atlantic Ocean, Caribbean Sea, Gulf of Mexico, and in the eastern Pacific Ocean. The Atlantic hurricane season lasts from June to November, with the peak season from mid-August to late October. A hurricane can produce winds exceeding 155 miles per hour as well as tornadoes and mircrobursts. Additionally, hurricanes can cause extensive damage from heavy rainfall. Floods and flying debris from the excessive winds are often the deadly and destructive results of these weather events.
For additional information about what to do before, during, and after a hurricane, visit http://www.ready.gov/hurricanes.
The University of Richmond works hard to protect you and campus, but sometimes bad people do bad things. Their motivations are different and the warning signs may vary, but the devastating effects are the same. Unfortunately you need to be prepared for the worst. Know that in an incident like this, victims are generally chosen randomly, the event is unpredictable and may evolve quickly. The first responders on scene are not there to evacuate or tend to the injured. They are well trained and are there to stop the suspect. Your actions can make a difference for your safety and survival. Be aware and be prepared. Your survival may depend on whether or not you have a plan. The plan doesn't have to be complicated. There are three things you could do: Run. Hide. Fight.
Using the Emergency Notification System, the University, whenever possible, will notify the campus community of the location or area of the active shooter/dangerous person. Individuals should use the information provided by the University to determine the appropriate course of action and/or direction to run.
For additional information about surviving an active shooter/dangerous person situation check out the Run, Hide, Fight video.
Fire spreads quickly; there is no time to gather valuables or make a phone call. In just two minutes, a fire can become life-threatening. In five minutes, a residence can be engulfed in flames.
Heat and smoke from fire can be more dangerous than the flames. Inhaling the super-hot air can sear your lungs. Fire produces poisonous gases that make you disoriented and drowsy. Instead of being awakened by a fire, you may fall into a deeper sleep. Asphyxiation is the leading cause of fire deaths, exceeding burns by a three-to-one ratio.
University-specific Fire Safety Information from the Office of Risk Management and Safety Services.
For additional information about fires and fire prevention as well as and what to do before, during, and after, visit http://www.ready.gov/home-fires.
Hazardous materials in various forms can cause death, serious injury, long-lasting health effects and damage to buildings, homes and other property. Many products containing hazardous chemicals are used and stored in homes routinely. These products are also shipped daily on the nation's highways, railroads, waterways and pipelines.
Chemical manufacturers are one source of hazardous materials, but there are many others, including service stations, hospitals and hazardous materials waste sites. Hazardous materials come in the form of explosives, flammable and combustible substances, poisons and radioactive materials.
Material Safety Data Sheets: http://www.msds.com/
For additional information about what to do before, during, and after a hazardous materials incident, visit http://www.ready.gov/hazardous-materials-incidents.


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Sourdough Starter
|Active dry yeast
|1 Teaspoon
|Warm water
|1⁄4 Cup (4 tbs)
|3⁄4 Cup (12 tbs)
|All purpose flour
|1 Cup (16 tbs)
Dissolve yeast in warm water in 3-quart glass bowl.
Stir in milk.
Gradually stir in flour.
Beat until smooth.
Cover with towel or cheesecloth; let stand in warm, draft-free place until starter begins to ferment, about 24 hours (bubbles will appear on surface of starter).
If starter has not begun fermentation after 24 hours, discard and begin again.
If fermentation has begun, stir well; cover tightly with plastic wrap and return to warm, draft-free place.
Let stand until foamy, 2 to 3 days.
When starter has become foamy, stir well.
Pour into 1-quart crock or glass jar with tight-fitting cover.
Store in refrigerator.
Starter is ready to use when a clear liquid has risen to the top.
Stir before using.
Use 1 cup starter in recipe; reserve remaining starter.
Add % cup milk and 3/4 cup flour to reserved starter.
Store covered at room temperature until bubbles appear, about 12 hours; refrigerate.
Use starter regularly (every 7 to 10 days).
If the volume of the breads begins to decrease, dissolve 1 teaspoon active dry yeast in 1/4 cup warm water.
Stir in 1/2 cup milk, 3/4 cup flour and the remaining starter.