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Exercise Eqpt Classifieds (Page 8)
Health & Fitness
Exercise Eqpt
Page 8
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Fitness & Recreation Equipment-13403
Scottsdale, Arizona
fitness & recreation equipment government liquidation online auction event- 13403 bidding opens - january 8th,2015at 12am est bidding closes - january 12,2015at 5pm est opening bid - $25 2 lots avail...
Scifit Ac5000m Treadmill
scifit ac5000m treadmill acm5000m is the medical version and has side handrail switches click here for more information & price.
Proform Performance 1450 Treadmill
target your weight-loss, performance and other fitness goals with the brand new performance 1450 treadmill! this treadmill is packed with superior technology, incredible power and overall convenience features to help you...
Lifespan Tr5000i Non-folding Treadmill
the lifespan fitness non-folding tr5000i treadmill click here for more information & price.
Fitness & Recreation Equipment-13270
Scottsdale, Arizona
fitness & recreation equipment government liquidation online auction event- 13270 bidding opens - november 26th, 2014at 12am est bidding closes - december 1st, 2014at 5pm est opening bid - $25 3 lots...
Life Fitness F1 Smart Treadmill
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Nautilus T516 Treadmill
nautilus t516 treadmillwell known for their health club quality commercial fitness equipment, nautilus has debuted a residential line. bringing many of the same comfort features and programs from the club into your home....
Sole Fitness F85-2013 Folding Treadmill (35 X 80)
as the top model of the folding series, the f85 treadmill offers a 4.0 cont. duty hp motor with output and performance second to none. the f85 also incorporates the largest deck that sole offers, an exceptional 22" wide ...
Discounted Weight Lifting Equipment - Buy Online!
lifting iron specializes in discount weight lifting equipment deals. you can't get it cheaper than by auction, and lifting iron aggregates available fitness and weightlifting auctions for you to see.check out lifting iro...
Apex Jd2.2 Flat Bench
apex flat exercise bench has a heavy duty, square tube frame and comfortable high density boxed deluxe upholstery. the bench has a durable powder coated finish. click here for more information & price.
Bowflex Tc5000 Treadclimber
reduce your exercise time with a super-efficient, low-impact workout. the treadclimber tc5000 has twelve (12) intensity settings make it easy to tailor your workout specifically to your fitness and comfort level - from b...
Best Fitness Bfob10 Olympic Bench
best fitness home workout equipment is manufactured to the same high standards as those set by industry leader body solid. affordably priced and ergonomically designed to fit any household, best fitness machines are test...
Marcy Deluxe Utility Bench
the marcy deluxe utility bench is constructed from top grade, high density foam. the 6-position back pad adjusts to incline, decline and flat positions. the seat can adjust to three positions. this bench will adapt to mo...
Ironmaster Super Bench Adjustable Weight-lifting
super strong, super versatile, flat, incline, decline, upright, 11 angle bench! 11 lock out angles: inclines, declines, flat and upright. 0, 5,10, 20, 30, 40, 50, 60, 70, 75, 80 and 85 degrees. powder coated grey metalli...
Fitness & Recreation Equipment - 20775
Scottsdale, Arizona
fitness & recreation equipment government liquidation online auction event- 20775/12757 bidding opens - june 19th, 2014 at 12am est bidding closes - june 23rd, 2014 at 5pm est opening bid - $25 2 lots ...
Proform Pro 4500 Treadmill
get the most out of your performance training with the proform pro 4500 treadmill. built with a powerful 3.8 chp mach z commercial pro motor, this treadmill will run with you for thousands of miles. the included wireless...
Weider X-factor Door Gym
you don't need a membership to get a great gym workout. grab hold of the weider® x-factor door gym and tone your muscles at home! click here for more information & price.
Lifespan Fitness Pro3 Treadmill
pro3 features: -the pro3 non-folding treadmill makes no compromises when it comes to stability and performance. built on a professional series frame, the pro3 is constructed with larger tubing for increased rigidity and ...
Kymaro Rhythm Rocker
dance your way to a better body rock it...crunch it...roll it unleash the dancer in you while sitting down and actually have fun while working out the rhythm rocker's exclusive stabilizing inter-axial technologytm (s.i.t...
Cheap Elliptical Cardio Machines
elliptical cardio machines on sale!are you searching for a good exercise machine? we have a wide selection of cheap elliptical cardio machines on sale. there are a lot of different brands we carry such ...
Set Of Six Medicine Balls With Rack
Doylestown, Pennsylvania
shipping is included in the price of this item. troy medicine ball set. our rubberized medicine balls come in 6 attractive colors with an easy grip surface and lasting durability. these heavy duty medicine balls are grea...
►::exercise Equipment Sale, Treadmills, B...
best prices on exercise equipment in ab & waist machines. check us out for great deals on ab & waist machines from slendertone, champion and body-solid. best prices on ultimate home gyms. use our latest onli...
24 Hour Fitness 1 Year Membership Specials (save)
24 hour fitness membership: you get more as a membercongratulations for exploring a health club membership. making the decision to improve your health with a 24 hour fitness membership can change your life.at 24 hour fit...
Ab Circle Pro
ab circle pro the fastest, easiest way to those sexy abs you always wanted. ab circle helps you lose your love handles. ab circle pro helps you burn fat and trim and tone your buns, hips and thighs. ab circle pro targe...
** Proform 985 Audio Trainer Treadmill Review
proform 985 audio trainer update: there's a sale! see proform 985 audio trainer sale price product review what would it be like to lose...
** Proform Performance 600 Treadmill Discount Sale
***limited time offer*** (click for more pictures) regular price: $999.00 sale price: see discounted price the proform performance 600 is on sale for a l...
** Proform 780 Crosswalk Treadmill Review
proform 780 crosswalk update: there's a sale! see proform 780 crosswalk sale price product review time is precious and that is precisel...
** Proform 380 Csx Bike Review
proform 380 csx update: there's a sale! see proform 380 csx sale price product review make your fitness dreams come true with the profo...
** Proform 480 Csx Bike Review
proform 480 csx update: there's a sale! see proform 480 csx sale price product review just cycling endlessly on a bike with nothing to ...
** Smooth Agile Dmt X2 Elliptical Review & Sale
smooth agile dmt x2 update: there's a sale! see smooth agile dmt x2 sale price product review the smooth agile dmt x2 elliptical featur...
** Smooth Ce 3.7 Elliptical Review/sale/best Price
smooth ce 3.7 elliptical update: there's a sale! see smooth ce 3.7 elliptical sale price product review are you spending more time than...
** Smooth Ce 2.7 Elliptical Review/sale/best Price
smooth ce 2.7 elliptical update: there's a sale! see smooth ce 2.7 elliptical sale price product review the smooth ce 2.7 elliptical is...
Marcy Sb222 4-position Utility Bench
this marcy utility exercise bench is ideal for those in need of a multi purpose workout bench. with a four position back pad; military, incline, flat and decline; you have the ideal dumbbell bench that will help you work...
Proform 790 T Treadmill
the proform 790 t features proshox elite 2 cushioning, delivering a comfortable running surface while reducing impact on your joints with each step. an easy-to-read display, as well as quickspeed and quick incline contro...
Elite Fitness Deluxe Manual Treadmill
deluxe folding manual treadmill with functional electronics. enjoy the convenience of walking or running on a compact treadmill, without the worry of motors, or using electricity. this product is part of the green tachno...
New Fitness Elliptical Trainer Exercise Bike
you are viewing a brand new premium fitness elliptical trainer. we purchase our products directly from the manufacture, passing all the savings to you. typically these elliptical trainers can reach up to $349.99. feel fr...
Phoenix 98900 Power Rower
the power rower utilizes a patented magnetic resistance system with a belt drive for a smooth and quiet workout. the four window lcd display lets you monitor all functions during use. the power rower folds up and rolls a...
Classic Full-size Bullworker & Case
the new red handle "professional & gym quality" bullworker in design and craftsmanship. super smooth, super quiet. custom full-size rubber coated handles. 100% increase in resistance and custom carry case. before you...
Trx Rip Trainer
introducing the newest trx - the rip trainer. using an innovative resistance cord system to create a variable, unbalanced load, it engages and helps to develop core strength, explosive power, flexibility, and endurance t...
Valor Athletics Inc. Bd 7 Power Rack
valor athletics, inc. bd - 7 power rack with lat pull for intense strength training. step into this "cage" to complete a myriad of exercises... lat pull downs, squats, military press, pull-ups and more! you want to bulk ...
Xmark Fitness Fid Weight Bench With Leg Curl
the xmark fid weight bench with leg extension and preacher curl xm-4419 will effectively build and strengthen your body in its flat, incline, and decline positions. this adjustability allows you to work arms, chest, and ...
Phoenix 99226 Power Pro Olympic Bench
full olympic size, not a "cheater". uprights are 42" apart on inside dimensions. deluxe lat tower and arm curl included - great value! with built in squat rack in rear. this sturdy, heavy duty machine is multi-stationed ...
Body-solid Powerline Folding Utility Weight Bench
best price on the web!free shipping!fast fedex service!why do customers love body-solid's powerline folding utility weight bench? read for yourself!"i give the bench five stars.""best part about it was no assembly requir...
Exerpeutic 100xl Heavy Duty Manual Treadmill
treadmill fitness walking is an effective way to burn extra calories and achieve a healthy lifestyle. walking or even running on the exerpeutic magnetic 100xl is one of the easiest and most effective ways to achieve a re...
Lifespan Fitness Tr3000i Folding Treadmill
the lifespan tr3000i folding treadmill is durable, reliable, and loaded with valuable features, helping you walk, jog, or run with confidence in the comfort of your own home. the award-winning treadmill's pleasing design...
Schwinn 840 Treadmill
100178 features: -warranties: frame 5 years, motor 10 years, electronics 1 year, part 6 months, wear part 90 days. dimensions: -product weight: 285 lbs.-product dimensions: 54'' h x 32'' w x 74'' l. click here...
Bowflex Treadclimber Tc5
go ahead, put the tc5 anywhere you want! our new, "green," treadclimber® machine is not only the most affordable and space saving model we've ever offered, it's also powered with our unique step 'n go technology that mak...
Can A Bob Jogging Stroller Help You Lose Weight?
will a bob jogging stroller help you get in shape?are you a new parent who loves to stay in shape?there's no reason to give up your healthful way of life just because your baby is here now. in reality, that's a good reas...
Www.buytc.com - Bowflex Treadclimber
www.buytc.com get the best deal on a bowflex treadclimber, choose from the tc5500, the tc5000, tc3000 or tc1000. the bowflex treadclimber is like having a treadmill, elliptical machine and stair stepper all in one! cu...
Ab Flyer Discount
ab flyer discount limited time only: get your special discount to ab flyer now... ...
Sole F85 Treadmill Vs Sole S77 Treadmill - Review
***click here to reveal the 2013 new year price for sole treadmills*** quick links the sole s77 is currently selling at a special $600 discount take $500 off the regular price of the sole f85 ...
Sole F83 Treadmill Vs Sole S73 Treadmill - Review
***click here to reveal the 2013 new year price for sole treadmills*** quick links the sole s73 is currently selling at a special $400 discount take $300 off the sole f83's regular price important...
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text:
Angry Birds theme park opening in the UK this summer
Nottinghamshire will play host to the first UK Angry Birds theme park opening at the end of this summer.
Sundown Adventureland has ordered £250,000 of playground equipment for the park, which has the official backing of Angry Birds creators Rovio.
Lappset Group, the same manufacturer that put together the rides at the Angry Birds theme park in Finland that opens this month, is providing the equipment.
The Nottinghamshire Angry Birds theme park will predominantly cater for children, but families of all ages are being encouraged to attend, with the game's mass appeal hopefully generating wide interest.
"We were very keen to have an Angry Birds Activity Park at Sundown as the brand is so well known throughout the world," said Paul Tomlinson, Sundown's park manager.
"It's currently one of the most downloaded games and appeals to all ages – something that was very important for us as although the park is designed for under-10s, we are keen to welcome families."
The team at the Sundown Adventureland Angry Birds Park is said to be working on opening as soon as possible, with late summer being the target.
The Angry Birds series of games have been downloaded more than 1 billions times since flying into mobile app stores in 2009.
Would you be an Angry Birds Theme Park a visit? Let us know what you think.
At internetmatters.org parents can find all the advice they will need to keep their children safe online. Designed specifically for parents, the site offers a wealth of up-to-date, unbiased information and advice about how to deal with online safety. Parents can learn about the latest issues and technologies, get great tips on how to talk about online safety with their children and get the best advice on dealing with issues and taking action. Created with experts, Internet Matters provides detailed information, but also signposts to best-in-class resources from individual expert organisations. Our goal is to ensure parents can always access the information that they need, in a format that is clear and concise.

subset: commoncrawl


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You'll be a scream when you wear the blue makeup from the Blue Body Paint. This opaque blue makeup will stay all night long and fits any costume need
Make Up Tips Craft your own blue period with this professional-grade Blue Grease Makeup. Transform into a Blue Man with this Spirit exclusive and bang on some PVC piping. Anything – Jack Frost to Ice Queen to Clown – is possible! Add Translucent Powder to "set and hold" your look all night long.
Why be blue? Why not! Paint your face to show your support for your team or create a custom costume of your own design. You can do it all with this royal blue Fanatics makeup stick - the water washable makeup is easy to apply and easy to remove.
Make Up Tips Bruises, Clowns, and Scotsmen all come gloriously to life in this rich, safe, non-toxic Blue Cream Makeup. Blend with other colors to create breathtakingly real bruises or use alone to rally your mates as Braveheart's William Wallace. Take the compact 1 oz. tube wherever you go!
Create an awesome look this Halloween when you use the Blue Liquid Latex 2oz Jar and 1" Brush. Liquid Latex is easy to use and take off, it's ammonia free and hypoallergenic, so it's safe to use as well!
Transform your look and create a new and enhanced identity with this set of five Pearlescent Makeup Crayons in gray, blue, purple, orange and pink.
Make Up Tips Brush on this rich, non-toxic Purple Cream Makeup for fairy, mermaid, or superhero highlights; or mix it with red or black or blue and lather it on to create frightful ghoul masks or accident victim bruises. Spice it up with Purple Glitter and "set" the look with Translucent Powder.
…light responsive art that glows in the dark with this colorful 6 pack of neon paint. The bright paint set includes neon colors yellow, orange, blue, pink, purple and green. Make fantastic landscapes or decorations for any crazy party, event or hang out. All you need is a surface, brush and…


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Eye Candy: Patriotic Rings
In celebration of our country's independence, we rounded up our favorite jeweled sparklers in red, white and blue! read more
Escort cards are extremely easy to personalize and an excellent way to bring in your wedding day colors -- from calligraphed seating cards set atop a textured linen to apples tagged with each guest's name or small personalized bundles of lavender tied off with string. Other ways to display escort cards: Pin them to a clothesline, post them on a board covered in color-coordinated ribbon, or incorporate them into your cocktail hour using personalized stirrers tagged with guests' names.see more


text:
A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.
1. A method of processing a semiconductor substrate, comprising:
forming an epitaxial layer on the substrate in a single substrate chemical vapor deposition chamber;
forming an oxide layer directly on the epitaxial layer in the same chamber;
removing the substrate from the chamber after forming the oxide layer; and
transporting the substrate to a remote location for further processing,
wherein removing is conducted immediately after forming the oxide layer, further comprising growing a sacrificial oxide layer and sublimating the sacrificial oxide layer within the deposition chamber before forming the epitaxial layer.
2. The method of
3. The method of
4. The method of
5. The method of
6. A method of processing a semiconductor substrate, comprising:
forming an epitaxial layer on the substrate in a single substrate chemical vapor deposition chamber;
forming an oxide layer directly on the epitaxial layer in the same chamber;
removing the substrate from the chamber after forming the oxide layer; and
transporting the substrate to a remote location for further processing,
wherein removing is conducted immediately after forming the oxide layer,
further comprising cleaning an interior of the deposition chamber while the substrate is outside of the deposition chamber, wherein cleaning comprises exposing interior surfaces of the deposition chamber to an etchant, wherein cleaning is performed after forming the epitaxial layer and before forming the oxide layer.
7. The method of
8. The method of
9. The method of
10. The method of
11. The method of
12. The method of
13. A method of processing a semiconductor substrate, comprising:
forming an epitaxial layer on the substrate in a single substrate chemical vapor deposition chamber;
forming an oxide layer directly on the epitaxial layer in the same chamber
removing the substrate from the chamber after forming the oxide layer; and
transporting the substrate to a remote location for further processing,
wherein removing is conducted immediately after forming the oxide layer, wherein HCl is added to a flow of the oxidant source gas.
14. The method of
15. The method of
This application is a continuation of Application No. 09/227,679, filed Jan. 8, 1999 (now U.S. Pat. No. 6,749,687, issued Jun. 15, 2004), which claims the priority benefit of provisional Application No. 60/070,991, filed Jan. 9, 1998.
The present invention relates to forming oxide and silicon layers within a single semiconductor processing chamber, and more particularly to thermal oxidation within a single-wafer epitaxial silicon deposition chamber.
High-temperature ovens, called reactors, are used to create structures of very fine dimensions, such as integrated circuits on semiconductor substrates. One or more substrates, such as silicon wafers, are placed on a wafer support inside the reaction chamber. Both the wafer and support are heated to a desired temperature. In a typical wafer treatment step, reactant gases are passed over the heated wafer, causing the chemical vapor deposition (CVD) of a thin layer of the reactant material on the wafer. Various process conditions, particularly temperature uniformity and reactant gas distribution, must be carefully controlled to ensure the high quality of the resulting layers.
Through a series of deposition, doping, photolithography and etch steps, the starting substrate and the subsequent layers are converted into integrated circuits, with a single layer producing from tens to thousands or even millions of integrated devices, depending on the size of the wafer and the complexity of the circuits.
Batch processors have traditionally been employed in the semiconductor industry to allow multiple wafers to be processed simultaneously, thus economically presenting low processing times and costs per wafer. Recent advances in miniaturization and attendant circuit density, however, have lowered tolerances for imperfections in semiconductor processing. Accordingly, single wafer processing reactors have been developed for improved control of deposition conditions.
Among other process parameters, single wafer processing has greatly improved temperature and gas flow distribution across the wafer. In exchange for greater process control, however, processing time has become even more critical than with batch systems. Every second added to processing times must be multiplied by the number of wafers being processed serially, one at a time, through the same single-wafer processing chamber. Conversely, any improvements in wafer throughput can translate to significant fabrication cost savings.
One process for which process control is particularly critical, and for which single wafer processing is particularly useful, is the formation of epitaxial layers. If the deposited layer has the same crystallographic structure as the underlying silicon wafer, it is called an epitaxial layer. Through careful control of deposition conditions, reactant gases are passed over a heated substrate such that the deposited species precipitates in conformity with the underlying crystal structure, which is thus extended into the growing layer. As is known in the art, epitaxial layers can be formed of intrinsic or doped silicon, silicon germanium, or other semiconductor materials. The lowest level of devices, including transistors, are often formed within an epitaxial layer formed over a semiconductor substrate.
Because integrated devices are formed within the epitaxial layer, it is important that the epitaxial layer maintain a pure crystal structure, free of contamination which could affect device operation. The purity and crystalline structure of the underlying substrate (or other base layer) prior to epitaxial deposition is one factor affecting the resultant epitaxial layer. Contaminants at the substrate surface can interfere with the crystal structure of the epitaxial layer, or with the electrical properties of devices made out of the epitaxial layer. Similarly, crystal dislocations in the underlying layer are propagated through the growing epitaxial layer. Of course, contamination of the epitaxial layer after formation can also critically affect electrical characteristics of the devices formed therein.
A need exists, therefore, for methods of purifying substrate surfaces prior to chemical vapor deposition, and of maintaining the purity of a deposited layer after formation. Desirably, such methods should be compatible with single-wafer, epitaxial silicon deposition chambers without increasing system costs or reducing wafer throughput.
These and other needs are satisfied by several aspects of the present invention.
In accordance with one aspect of the present invention, an atmospheric silicon deposition reactor includes a single-substrate reaction chamber. A reaction gas inlet and an outlet of the chamber define a gas flow path between them. A support is included for supporting a substrate within the gas flow path. The reactor includes a source of hydrogen gas suitable for flowing through the reaction chamber as a carrier gas during epitaxial silicon deposition, a source of silicon-containing gas, and a source of a gaseous oxidizing agent suitable for thermal growth of silicon dioxide from a silicon layer. Gas lines connect the sources of gases to the reaction chamber.
In accordance with another aspect of the invention, a chemical vapor deposition reactor includes a process chamber with a gas inlet and a gas outlet. A first gas line communicates hydrogen gas between a hydrogen container and the gas inlet. A second gas line communicates a mixture of O2 and a non-reactive gas between an oxidant source container and the gas inlet. The level of oxygen in oxidant source container is non-explosive in the presence of any amount of hydrogen under operating conditions of the process chamber.
In accordance with another aspect of the invention, a method of processing semiconductor substrates includes forming an epitaxial layer containing silicon in a chemical vapor deposition chamber and forming an oxide layer over the epitaxial layer within the chamber.
In accordance with another aspect of the invention, a method of fabricating integrated circuits on a semiconductor substrate includes loading the substrate into a chemical vapor deposition processing chamber. An epitaxial silicon layer is deposited on at least part of the substrate within the chamber. A thermal oxide layer is grown over the epitaxial silicon layer within the chamber, and a polysilicon layer is deposited over the thermal oxide layer, also within the chamber.
In accordance with another aspect of the invention, a method of processing a semiconductor substrate includes loading the substrate into a chemical vapor deposition chamber. An oxidant source gas including O2 is introduced into the chamber, and an oxide is grown from a silicon surface of the substrate. The flow of the oxidant source gas is shut off, and the oxidant source gas purged from the chamber with a gas containing hydrogen.
In accordance with another aspect of the invention, a method of forming layers over a semiconductor substrate in a single substrate reactor includes loading the substrate into a single-substrate reaction chamber. An oxide layer is grown over the substrate, within the reaction chamber at about atmospheric pressure, by exposing a top surface of the substrate to an oxidant. A silicon layer is deposited, within the reaction chamber at about atmospheric pressure, directly on the oxide layer.
These and further aspects of the invention will be readily apparent to the skilled artisan from the following description and the attached drawings, wherein:
While the preferred embodiments are discussed in the context of single-substrate, epitaxial silicon deposition, it will be understood that certain aspects of the invention will have application to non-epitaxial layers and deposition reactors of other types. Furthermore, while a series of process steps are disclosed herein for treating a single substrate, one of ordinary skill in the art will recognize the utility of certain of the disclosed steps even in the absence of some of the disclosed steps.
Preferred Reactor
A plurality of radiant heat sources are supported outside the chamber 12, to provide heat energy to the chamber 12 without appreciable absorption by the quartz chamber 12 walls. While the preferred embodiments are described in the context of a "cold wall" CVD reactor for processing semiconductor wafers, it will be understood that the processing methods described herein will have utility in conjunction with other heating/cooling systems, such as those employing inductive or resistive heating.
The illustrated radiant heat sources comprise an upper heating assembly of elongated tube-type radiant heating elements 13. The upper heating elements 13 are preferably disposed in spaced-apart parallel relationship and also substantially parallel with the reactant gas flow path through the underlying reaction chamber 12. A lower heating assembly comprises similar elongated tube-type radiant heating elements 14 below the reaction chamber 12, preferably oriented transverse to the upper heating elements 13. Desirably, a portion of the radiant heat is diffusely reflected into the chamber 12 by rough specular reflector plates above and below the upper and lower lamps 13, 14, respectively. Additionally, a plurality of spot lamps 15 supply concentrated heat to the underside of the wafer support structure (described below), to counteract a heat sink effect created by cold support structures extending through the bottom of the reaction chamber 12.
Each of the elongated tube type heating elements 13, 14 is preferably a high intensity tungsten filament lamp having a transparent quartz envelope containing a halogen gas, such as iodine. Such lamps produce full-spectrum radiant heat energy transmitted through the walls of the reaction chamber 12 without appreciable absorption. As is known in the art of semiconductor processing equipment, the power of the various lamps 13, 14, 15 can be controlled independently or in grouped zones in response to temperature sensors.
A substrate, preferably comprising a silicon wafer 16, is shown supported within the reaction chamber 12 upon a substrate or wafer support structure 18. Note that while the substrate of the illustrated embodiment is a single crystal silicon wafer, it will be understood that the term "substrate" broadly refers to any surface on which a layer is to be deposited. Moreover, cleaning and prevention of contamination is often required in depositing layers on other substrates, including, without limitation, the deposition of optical thin films on glass or other substrates.
The illustrated support structure 18 includes a wafer holder 20, upon which the wafer 16 rests, and a support spider 22. The spider 22 is mounted to a shaft 24, which extends downwardly through a tube 26 depending from the chamber 12 lower wall. Preferably, the tube 26 communicates with a source of purge gas which can flow during processing, inhibiting process gases from escaping to backside of the wafer
A plurality of temperature sensors are positioned in proximity to the wafer 16. The temperature sensors may take any of a variety of forms, such as optical pyrometers or thermocouples. The number and positions of the temperature sensors are selected to promote temperature uniformity, as will be understood in light of the description below of the preferred temperature controller. Preferably, however, the temperature sensors directly or indirectly sense the temperature of positions in proximity to the wafer.
In the illustrated embodiment, the temperature sensors comprise thermocouples, including a first or central thermocouple 28, suspended below the wafer holder 20 in any suitable fashion. The illustrated central thermocouple 28 passes through upon the spider 22 in proximity to the wafer holder 22. The reactor 10 further includes a plurality of secondary or peripheral thermocouples, also in proximity to the wafer 16, including a leading edge or front thermocouple 30, a trailing edge or rear thermocouple 31, and a side thermocouple 31 (not shown). Each of the peripheral thermocouples are housed within a slip ring 32 which surrounds the wafer holder 20 and wafer 16. Each of the central and peripheral thermocouples are connected to a temperature controller, which sets the power of the various heating elements 14 in response to the readings of the thermocouples.
In addition to housing the peripheral thermocouples, the slip ring 32 absorbs and emits radiant heat during high temperature processing, such that it compensates for a tendency toward greater heat loss or absorption at wafer edges, a phenomenon which is known to occur due to a greater ratio of surface area to volume in regions near such edges. By minimizing edge losses and the attending radial temperature non-uniformities across the wafer 16, the slip ring 32 can reduce the risk of crystallographic slip. The slip ring 32 can be suspended by any suitable means. For example, the illustrated slip ring 32 rests upon elbows 34 which depend from a front chamber divider 36 and a rear chamber divider 38. The dividers 36, 38 desirably are formed of quartz.
The illustrated reaction chamber 12 includes an inlet port 40 for the injection of reactant and carrier gases, and the wafer 16 can also be received therethrough. An outlet port 42 is on the opposite side of the chamber 12, with the wafer support structure 18 positioned between the inlet 40 and outlet 42.
An inlet component 50 is fitted to the reaction chamber, adapted to surround the inlet port 40, and includes a horizontally elongated slot 52 through which the wafer 16 can be inserted. A generally vertical inlet 54 receives gases from remote sources, as will be described more fully with respect to
An outlet component 56 similarly mounts to the process chamber 12 such that an exhaust opening 58 aligns with the outlet port 42 and leads to exhaust conduits 60. The conduits 60, in turn, communicate with suitable vacuum means (not shown) for drawing process gases through the chamber 12. In the preferred embodiment, process gases are drawn through the reaction chamber 12 and a downstream scrubber without the aid of a pump. While, in other arrangements, a pump or fan may be included to aid in drawing process gases through the chamber 12, the preferred reactor is not configured as a vacuum chamber as that term is understood in the art of chemical vapor deposition.
Wafers are preferably passed from a handling chamber (not shown), which is isolated from the surrounding environment, through the slot 52 by a pick-up device. While a fork or paddle can serve as the handling device, the preferred pick-up device comprises a wand which shoots high velocity streams of gas at angles, as described in U.S. Pat. No. 4,846,102, the disclosure of which is hereby incorporated by reference. When brought close to the top of a wafer surface, the gas streams create a low pressure zone above the wafer, causing the wafer to lift. The handling chamber and the processing chamber 12 are preferably separated by a gate valve (not shown) of the type disclosed in U.S. Pat. No. 4,828,224, the disclosure of which is hereby incorporated by reference.
The total volume capacity of single wafer process chambers designed for processing 200 mm wafers, for example, is preferably less than about 30 liters, more preferably less than about 20 liters, and most preferably less than about 10. The illustrated chamber has a capacity of about 7.5 liters. Because the chamber 12 is divided by the dividers 32, 38, wafer holder 20, ring 32, and the purge gas flowing from the tube 26, however, the effective volume through which process gases flow is around half the total volume (about 3.77 liters in the illustrated embodiment). Of course, it will be understood that the volume of the single-wafer process chamber 12 can be different, depending upon the size of the wafers meant to be processed therein. For example, a single-wafer processing chamber of the illustrated type, but for 300 mm wafers, preferably has a capacity of less than about 100 liters, preferably less than about 60 liters, and more preferably less than about 30 liters. One 300 mm wafer processing chamber has a total volume of about 24 liters, with an effective processing gas capacity of about 11.83 liters.
As indicated in
Such exposure and contamination is inevitable in transporting wafers from vendors to fabrication facilities, and transporting wafers among processing equipment. Typically, for example, polished silicon wafers are provided by independent suppliers. Yet another set of suppliers often obtain wafers, apply epitaxial layers, and furnish these wafers to fabrication facilities. Even when epitaxial layers and later fabrication steps performed at the same facility, wafers are often exposed to atmospheric contaminants and plastic handling equipment between processing steps in different parts of the facility.
One method of removing native oxide is to expose the substrate to hydrogen in high temperature bake or anneal steps. Silicon dioxide (SiO2) at the substrate surface tends to sublimate as SiO, leaving a clean substrate surface ready for epitaxial deposition. Such hydrogen bake steps have generally been effective only at relatively high temperatures for long periods of time (e.g., at about 1200° C. for about 90 seconds). The high temperatures and long exposures are believed to be required to diffuse carbon contaminants into the substrate bulk and away from the surface, small temperature non-uniformities during such high temperature steps can itself cause crystallographic slip, or dislocations. Furthermore, ramping the temperature up to hydrogen anneal temperatures and then back down to epitaxial deposition temperatures adds to production time and costs for each wafer processed.
Traditional alternatives to hydrogen annealing include hydrofluoric acid (HF) wet pre-cleaning, or HF vapor etches. However, the extra handling and process steps necessitated by ex situ processes raise production times and costs considerably, while fluorine processes are incompatible with most cold-wall (quartz chamber) reactors.
U.S. Pat. No. 3,926,715, issued to Süssmann, discloses another method of cleaning silicon substrates prior to epitaxial deposition. In the context of batch processing reactor, Süssmann discloses oxidizing and annealing multiple silicon wafers at high temperatures. Total exposure to these high temperature steps, however, is about 7 to 22 minutes. As noted above, the high likelihood of small temperature non-uniformities during such extended high temperature steps tends to produce crystallographic slip to an extent unacceptable for today's high density circuitry.
Moreover, use of oxygen and hydrogen in the same reactor creates a serious risk of explosion. While flowing purge gas between oxygen steps and hydrogen steps may be effective for the reactor type disclosed in Süssmann, it is unlikely to be so effective for the single-wafer reactor design illustrated in
In particular, the percentage of oxidant in the mixture is less than the explosive limit for mixtures of the oxidant with H2. For oxygen gas, the explosive limit is about 6.1% O2 by volume at room temperature and atmospheric pressure. It will be understood that at different temperature and pressure conditions, the explosive limit will differ slightly from that given above, and can be readily obtained for particular reactor conditions by one of skill in the art.
Below the explosive limit, the mixture of O2 and inert gas will not explode even if all of the inert gas is replaced with H2. Accordingly, the stored mixture is "safe" when attached to a reactor with high H2 flow rates, even operated at atmospheric pressure, and even if MFCs or gas valves should fail. The oxidant mixture 70 can be mixed with any amount of pure H2 and remain non-explosive, as the additional gas can only dilute the oxidant level.
The lower limit for the percentage of oxidant depends upon its intended use and time acceptable for oxidation, but can be as low as 0.1% (for pre-epitaxial cleaning, e.g., as will be understood from the discussion of
Accordingly, the oxidant source for the preferred reactor conditions preferably comprises less than about 6% O2 in a mixture with a noble gas, and particularly between about 1% and 5% O2.
As also shown in
A source 74 of silicon-containing gas is also shown. The silicon source gas can comprise, for example, silane or dichlorosilane (DCS), trichlorosilane (TCS), or other known silicon sources. The illustrated silicon source 74 includes a bubbler and a gas line for bubbling H2 through a liquid silicon source such as the illustrated TCS, to more effectively transport silicon to the reaction chamber in gaseous form.
Desirably, the reactor 10 will also include other source gases such as dopant sources (e.g., the illustrated phosphine 76, arsine 78 and diborane 80 sources) and etchants for cleaning the reactor walls (e.g., HCl source 82). Additional illustrated source gases include a germanium source 84, which can be utilized for doping or formation of SiGe films, and a silane source 86, which may be used for deposition of silicon (polycrystalline, amorphous or epitaxial, depending upon deposition parameters). While not shown, a source of ammonia (NH3) can also be provided.
Each of the gas sources may be connected to the inlet 54 (
Substrate Cleaning Process
Referring again to
Prior to flowing process gases for reaction in the first process, however, purge gas is preferably flowed through the chamber to remove any atmospheric contaminants which may have been introduced through the gate valve during loading of the substrate. Desirably, H2 is flowed from the inlet port 40 to the outlet port 42, as well as through the depending tube 26 to the underside of the wafer holder 20 (see
During purging, the temperature of the substrate can be ramped to the desired process temperature by increasing power output to the lamps 13, 14, 15. Preferably, the sacrificial oxidation 102 is conducted between about 700° C. and 1100° C., more preferably between about 800° C. and 1000° C. Since the sacrificial oxide is to be removed and the thickness is not critical, temperature ramping can also be performed during oxidation 102.
The oxidizing agent is introduced to the reaction chamber in a non-explosive mixture. An oxidant source such as pure O2, for example, can be introduced with the flowing H2 gas serving as the carrier, such that the ratio of O2:H2 is below the explosive limit for the given conditions.
Preferably, however, the oxidant is stored in a safe mixture with a non-reactive gas, as disclosed above with respect to
In one embodiment, HCl or other chlorine-containing vapor is added to the oxidant flow, to aid in removal of metal contaminants from the substrate surface. Alternatively, HCl can be added to the hydrogen bake step, described below, for the same purpose.
The oxidation 102 proceeds long enough to clean contaminants from the surface of the substrate. In particular, surface carbon is burned off as CO2 or CO during the oxidation 102. The targeted oxide thickness is between about 0.5 Å and 100 Å, more preferably between about 0.5 Å and 20 Å, and most preferably between about 1 Å and 5 Å. Preferably, the oxidant is flowed for about 2 seconds to 60 seconds, depending upon the chosen temperature and oxidant concentration. One of ordinary skill in the art can optimize the length of time or oxide thickness required for the oxidation 102 to sufficiently clean the substrate of contaminants without wasteful oxide growth.
Referring again to
In accordance with the preferred embodiment, the overall time required for initiation and performance of the hydrogen bake 104 is minimized by many factors. Preferably, the substrate on which the oxide is grown is not removed from the process chamber 12 between oxidation 102 and hydrogen bake 104. Additionally, when the oxidant flow is shut off, the oxidant need not be purged with an inert gas in a separate step. Rather, due to the safe mixture of the preferred oxidant, the oxidant can be purged with hydrogen, which immediately begins the sublimation process. The hydrogen bake can also be conducted within the same temperature range as the oxidation, if desired, such that temperature ramping is not necessary. On the other hand, increasing temperature during the hydrogen bake will increase the rate of sublimation. One of ordinary skill in the art can optimize the process temperature to maximize wafer throughput by determining, for different temperatures in a particular system, the time required for each of temperature ramping and sublimation.
Because carbon has been burned off during the oxidation 102, the hydrogen bake need only evaporate the oxide and can thus be conducted rapidly and at lower temperatures than conventional atmospheric pressure hydrogen bakes. Preferably, the hydrogen bake is conducted below 1150° C. More preferably, the hydrogen bake is conducted at between about 900° C. and 1070° C. for between about 10 seconds and 60 seconds, depending on the oxide thickness.
The rate of sublimation has been found to depend upon hydrogen bake temperature and upon the purity (i.e., level of oxidant partial pressure) of the reducing environment. Most preferably, the hydrogen is pure enough to contain less than about 1 part per billion (ppb) of oxidants. Such purity of the reducing environment can be accomplished, in alternative arrangements, by vacuum pumping the process chamber to about 10 −7 to 10 −6 Torr. For the preferred atmospheric reactor, pure H2 can be obtained through evaporation from cryogenic sources, and the reactor chamber can be effectively sealed from the surrounding "clean room" to provide the desired level of reducing environment purity.
With a reducing environment containing less than about 1 ppb oxidants, an oxide of about 10 Å, the bake step can be completed at 900° C. in only about 10 seconds. Alternatively, with a reducing environment containing greater than about 7 parts per million (ppm) of oxidants, sublimation of 10 Å oxide can be completed at about 1070° C. in about 10 seconds. Similarly, higher temperatures can compensate for higher levels of oxidant leakage into the chamber. Preferably, the oxidant level is kept at least below about 0.1% by volume in the process chamber during hydrogen baking 104.
With reference to
The hydrogen bake 104 leaves a clean substrate surface for further processing. Carbon is burned off during oxidation 102, while the grown oxide is cleaned during the hydrogen bake 104 by two possible reactions:
The reactions thus convert the sacrificial oxide to H2O or SiO vapor, which is exhausted from the process chamber. The substrate surface is thus cleaned of carbon, oxide, and metal impurities can also be removed if HCl is added to either of the oxidation 102 or hydrogen bake 104 processes.
Epitaxial Deposition
In accordance with the preferred embodiments, a silicon source gas is then introduced to initiate deposition 106 of a semiconductor layer, and in particular of an epitaxial silicon layer. H2 flows as a carrier gas. In the illustrated embodiment, the epitaxial layer is deposited 106 upon the substrate within the same process chamber 12 (
As is known in the art, epitaxial deposition is a CVD process whereby the deposited layer grows in conformity with the crystal structure of the underlying layer. Temperature ranges and deposition rates depend in general upon the source gas used and other reactor conditions, but in general epitaxy is effected by silane (SiH4) between about 900° C. and 1150° C., by dichlorosilane (DCS or SiH2Cl2) between about 1000° C. and 1100° C., or by trichlorosilane (TCS or SiHCl3) between about 1050° C. and 1150° C. Significantly, for any of the above silicon sources, the epitaxial deposition 106 can be conducted at the same temperature or higher than the preferred sublimation process 104. Thus, time and energy need not be wasted in elevating the temperature to a high level for hydrogen baking, and then reducing the temperature again for epitaxy.
It will be understood by one of skill in the art that epitaxial semiconductor layers can be intrinsic or in situ doped, selective or non-selective, and can comprise silicon or silicon germanium.
An exemplary epitaxial deposition comprises forming about 3 μm of epitaxial silicon on the substrate by flowing 15 g/min of TCS in a 45 slm flow of H2 carrier for about 45 seconds, with the substrate temperature at about 1120° C. A dopant gas can also be added to the flow to achieve a background dopant level for devices to be formed in the layer in subsequent processing steps. Reactant gases are shut off when a layer of sufficient thickness has formed. H2 can continue to flow until the reactant gases are purged from the chamber.
The resultant epitaxial layer has a contaminant-free, hydrogen-terminated surface (i.e., hydrogen occupies otherwise available valence electrons of surface silicon atoms), which protects the layer from absorbing any contaminants.
Post-Epitaxial Oxidation and Chamber Cleaning
In accordance with one aspect of the invention, the surface can be kept clean by performing an oxidation 108 to grow a protective layer over the epitaxial layer within the same process chamber 12 (
To maintain the purest possible epitaxial layer, the oxidation 108 is performed in situ, i.e., without removing the substrate from the process chamber 12 in which the epitaxial layer was formed. Furthermore, growing a protective oxide in situ, i.e., without removing the substrate from the chamber, will greatly improve wafer throughput. Preferably, therefore, the oxide layer is grown in situ.
Such in situ oxide growth, however, may come at the expense of increased chamber cleaning costs. Residue from silicon source gases is generally left on surfaces of the reaction chamber 12 after the epitaxial deposition 106. In the past, such residues have been removed with simple HCl vapor etch steps between depositions. Without frequent cleaning, the residue can cloud the quartz reactor walls through which radiant heat must pass for normal operation. Exposing the residue to an oxidation step before the etch step, however, tends to harden the residue, requiring more harmful or costly cleaning steps. Ex situ acid washing the coated surfaces, for example, entails considerable costs in dismantling the process chamber, not to mention the costs of reactor down time during ex situ cleaning of reactor components.
Accordingly, after oxidation 108 and any further processing to be performed within the chamber, the wafer can be removed from the process chamber 12 (
Alternatively, the substrate with the epitaxial layer can be temporarily removed from the process chamber 12 (
In accordance with this alternative arrangement, the wafer with the epitaxial layer is transported to the wafer handling chamber by a pick up device which minimizes risk of damage or contamination of the substrate. The preferred pick-up device, described above, shoots high velocity streams of gas outwardly from a downward-facing surface. Use of H2 for the pick-up wand gas streams is preferred, since hydrogen is chemically compatible with the silicon layer to be protected, and can typically be provided in greater purity (i.e., fewer contaminants) than nitrogen. Not only does the preferred pick-up device avoid direct contact with the wafer, but the continual shower of hydrogen gas protects the silicon surface from contamination and maintains the hydrogen-termination.
The substrate can be maintained upon the pick-up device or on a staging station within the load lock chamber while the chamber is cleaned. In the interim, the gate valve to the reaction chamber remains closed. After the cleaning cycle is complete, the etchants are purged from the reaction chamber 12, the gate valve is opened, and the substrate is returned to the reaction chamber 12 from the load lock chamber.
The oxide can serve solely as a protective layer, in accordance with one embodiment. For such use, the oxidation 108 should be conducted until a layer is formed of sufficient thickness to inhibit any contamination from diffusing through the oxide to the silicon surface prior to conducting the next processing step, under normal handling conditions. Preferably, a protective oxide should be between about 20 Å and 200 Å, more preferably between about 30 Å and 100 Å.
As noted above, in situ oxidation 108 is preferred, in order to maximize wafer throughput. After the epitaxial layer has been deposited 106, the oxidizing agent is again turned on. The H2 and silicon source gas need not be purged in a separate step. Rather, the oxidant, in a safe mixture with an inert gas, can perform the purging while immediately beginning the oxidation 108.
Desirably, the oxidation 108 comprises a high quality dry oxidation, and can be grown to any desired thickness, depending upon its intended use. Parameters for the oxidation 108 can be as described with respect to the sacrificial oxidation 102, except for desirably longer oxidation times. As is known, HCl can be added in small amounts to the flow, to improve the quality of the resultant oxide layer.
After formation of such a protective oxide layer, oxidant flow is turned off, and the substrate can be removed 110 to remote sites for further processing. During handling and transportation through normal clean room environments, the epitaxial silicon surface is kept sealed beneath the protective oxide.
In accordance with another embodiment, the oxidation 108 can not only protect the underlying semiconductor layer from contamination, but also forms a gate dielectric over the epitaxial layer formed by deposition 106. As with the previously described embodiment, the oxidation 108 in accordance with this embodiment is preferably performed in situ, i.e., without removing the substrate from the processing chamber after the epitaxial deposition. There is thus little or no chance for contamination of the epitaxial layer prior to formation of the gate oxide. The base layer in which transistors will be built thus remains of high quality, and the oxide/epitaxial layer interface can be free of charge-trapping sites. Furthermore, by growing the oxide in the same chamber as the epitaxial layer, several steps can be avoided, such as transportation and cleaning prior to forming a gate oxide with different equipment.
Oxidation for creating a gate oxide can be as described above, although gate oxides are also frequently formed with NO or N2O, which would be provided in a safe mixture, as described with respect to the preferred O2/Ar mixture. As described with respect to the oxidation 108 for forming a protective layer, HCl can be added to the oxidant flow to improve oxide quality.
For this embodiment, regardless of the particular oxidant, oxidation 108 is extended until a thermal oxide is formed of sufficient thickness for use as a gate oxide. Currently, gate oxides are greater than about 20 Å, and tend to be between about 40 Å and 60 Å. As critical dimensions continue to shrink, future gate oxides may be about 25 Å to 30 Å. Gates designed to allow quantum tunneling, such as for EPROMS, can be thinner still.
Most preferably, oxidation 108 in accordance with a gate dielectric embodiment is followed by a post-oxidation anneal 111. In particular, a high temperature ammonia (NH3) anneal nitridizes the oxide surface, thereby reducing the oxide's boron (or other dopant) diffusion coefficient, as is known in the art. Advantageously, the safe mixture of oxidant 70 (
Gate Conductor Deposition
If the oxidation 108 is used for formation of a gate oxide, a conductive gate layer can also be formed 112 within the same process chamber. Gate conductors typically comprise polysilicon, at least as a first layer over the gate oxide. As the preferred reactor 10 includes a gaseous silicon source and gas line to the process chamber 12, formation of the silicon layer in situ would be advantageous over transporting the substrate 16 to other equipment for deposition.
Accordingly, after oxidation 108 to produce an oxide suitable for use as a transistor gate dielectric, a polysilicon layer is deposited 112 over the oxide layer. It will be understood that the polysilicon is considered directly deposited over the oxide layer, even though the gate oxide is slightly nitridized in accordance with the preferred post-oxidation ammonia anneal 111. Preferred parameters for the polysilicon deposition 112 comprises flowing 350 sccm silane and 45 slm of H2, with the substrate heated to about 650° C. Desirably, the polysilicon layer is also in situ doped for conductivity. The chamber can be maintained at about atmospheric pressure. Under such conditions, a polysilicon layer of about 1,000 Å can formed in about 90 seconds.
After formation of the polysilicon layer, the wafer 16 is transferred to other semiconductor processing equipment for further processing, such as the application of metal strap layers, photolithography and etching to define gates, formation of insulative spacers, self-aligned doping of source and drain regions, metallization steps, etc.
Preferred Structures
All of layers 122, 124 and 126 can be formed sequentially within the same single wafer CVD reactor. All three layers are preferably formed without removing the wafer from the processing chamber 12 (
As a result of the pre-clean, high quality layers, and particularly epitaxial silicon layers, can be formed on the cleaned substrate. The preferred process also provides a method of keeping the surface of such layers clean. Since epitaxial layers are often the base layer in which logic devices (e.g., transistors) for integrated circuits are made, the cleaner epitaxial layers produced by the methods disclosed herein can reduce device failure and improve yields for IC fabrication.
Conducting several consecutive processes in the same processing tool or reactor also improves wafer throughput, and hence production costs, considerably. As disclosed herein, three layers of an integrated circuit can all be formed in the same reactor. Furthermore, these layers (epitaxial silicon, gate oxide, and polysilicon gate layers) can be formed in a single-wafer processing chamber, with the attendant high degree of process control.
It will be appreciated by those skilled in the art that various modifications and changes may be made without departing from the scope of the invention. For example, gate oxide growth 108 in a single wafer CVD reactor, followed by in situ formation 112 of a conductive gate layer, can be advantageous even without previous deposition of an epitaxial layer. Similarly, wafers can be cleaned within the preferred reactor by the disclosed sacrificial oxidation 102 and in situ hydrogen bake even without subsequent in situ layer formation. Similar other modifications and changes are intended to fall within the scope of the invention, as defined by the appended claims.
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Reselling used shirts, pants and skirts is the crux of B-thrifty's
business model. But when it came time to swap out unsold clothing for fresh inventory, the owners of the Woodbridge thrift store were uncertain of what to do with the excess merchandise.
With 103,000 square feet of sales floor space brimming with apparel for men, women and children, the company needed every inch of its 30,000-square-foot warehouse.


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Seed Study - Andropogon gerardii
NPS Graphic
Species: Andropogon gerardii
Vegetative identification: Young shoots are reddish brown with sheaths that are very pubescent and flattened. Leaf blades have long hairs on the margins and upper surface of the blade.
Andropogon gerardii – big bluestem
Average number of good seeds per gram bulk matter: 22, 9, and 17, depending on collection site
Average number of good seeds per gram cleaned: n.m.
Commercial estimates of seeds per gram: 364
Percent seed: n.m.
Percent live: 59
Collection dates: September 7, 11, 12, 18
Collection effort: 578 g in 21 person-hours
Collection notes: Species is common in park, but flowering plants were rare in 2004 due to grazing and drought.
Cleaning notes: Bulk seed includes small pieces of stem, leaves, lemmas, glumes, etc.


text:
Press release from Marketwire
Paladin Energy Ltd: Kayelekera Illegal Strike-Discussions On Return To Work
Thursday, May 17, 2012
Paladin Energy Ltd: Kayelekera Illegal Strike-Discussions On Return To Work07:00 EDT Thursday, May 17, 2012PERTH, WESTERN AUSTRALIA--(Marketwire - May 17, 2012) -Paladin Energy Ltd. (TSX:PDN)(ASX:PDN) (Paladin or the Company) advises that discussions with the Local Staff Association (LSA) and government officials on an agreed return to work by striking Malawi employees at the Kayelekera Mine continued through Wednesday, 16 May.The LSA requested additional time to consult employees based in Karonga town, some 53 kilometres from the mine. The LSA asked to meet management on Thursday morning, 17 May to facilitate a full return to work. Paladin has agreed to this request. Employees have indicated a strong willingness to return to work. Some night shift staff reported for duty last night. Paladin remains confident of an early return to full production.ACN 061 681 098FOR FURTHER INFORMATION PLEASE CONTACT: Paladin Energy LtdIn Australia:John BorshoffManaging Director/CEO+61 8 9381 4366 or Mobile: +61 419 912 firstname.lastname@example.com Energy LtdIn Canada:Greg Taylor905 337-7673 or Mobile: 416 605-5120 (Toronto)email@example.com


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Home > Woodworking Plans & Components > Clock Plans and Components > ATKINS Reproduction Woodworking Mantel Clock Plan
This clock plan will guide you to build a stately mantel clock that was styled after the original design of a prominent Early American clock designer, Joseph Ives. The Atkins Clock Company produced it during the mid 1800s. While the original clock was equipped with a wagon spring, time-only movement, our version uses a Hermle 8-day key-wound mechanical movement, which plays the full Westminster melody on the hour, progressive melody on the quarter-hours and strikes out the hours on five tuned chime rods. Great care has been taken to replicate the original clock style in this precision-machined kit. You'll enjoy completing this clock and displaying it with pride in your home or giving it as a special heirloom-quality gift.
Clock Plan contains dimensional drawings for each wood piece required for assembly. The clock plan will also illustrate recommended machining options for producing the profiles illustrated, plus step-by-step assembly instructions and supporting illustrations.
Mechanical Component Package features the #13006 mechanical movement as well as all necessary hardware and fasteners required to complete assembly. This clock movement features a Hermle 8-day key wound mechanical movement and plays the Westminster melody on the hours, progressive melody on the quarter hours and strikes out the hours on five tuned chime rods. The package will also contain required components such as pre-punched 7-1/4-inch square Roman clock face dial with raised corners, glass panel, hinges, knobs, door latch, magnetic door catch and hands.
Quartz Component Package contains #12012 quartz chiming clock movement as well as all necessary hardware and fasteners required to complete assembly. The quartz clock movement features a Westminster chime which plays the melody on the hour, progressive melody on the quarter hours and strikes out the hours. This package will also contain required components such as the 7-1/4-inch square Roman clock face dial, glass panel, hinges, knobs, door latch, magnetic door catch and hands.
Finished Size: 16-7/8"H x 12"W x 6-7/8"D
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Because we at Klockit understand that this is possibly a once in a lifetime purchase, the delivery of your Howard Miller grandfather clock
is completed with our Ultimate white glove delivery crew.
The delivery is completed by a 2 man service and placed in the room of your choice.
The unit is then unpacked, the carton packaging is removed, and any light assembly (up to 30 minutes) is completed.
Finally, you get the opportunity to inspect and sign off on the delivery before the delivery crew leaves your house to insure your satisfaction.


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Originally written on Fox Sports Carolinas | Last updated 11/13/12
CHARLOTTE, N.C. --- When Tyrus Thomas dove for a loose ball heading out of bounds near the baseline in the second quarter Tuesday night against the Washington Wizards, it was clear the collective mindset of the Charlotte Bobcats was to execute at maximum effort. Thomas saved the ball to a teammate, and about 12 seconds later Ramon Sessions converted a driving layup. It was one of many effort plays the Bobcats made in their 92-76 victory over the fledgling Wizards and was an indication the team was dialed in. Dialed in for the Lakers or Heat, sure, that's one of the NBA's consistencies for all opposing franchises. But geared up for the winless Wizards? Perhaps when you're a franchise that set the NBA record for the worst winning percentage in a season a year ago, that's the only way to approach things. First-year Bobcats coach Mike Dunlap is not only fighting the residue of that horrid season hanging over the franchise, but he's also battling human nature. He understands that a...
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Originally written on The Penalty Flag | Last updated 11/22/12
Forget about the 2013 NFL draft, because the Jacksonville Jaguars already have a Franchise in Chad Henne. This is going to develop a lot of controversy, but give the concept a chance. The Jags are not exactly a team that just needs one quarterback and they are back on top. It's going to be a 2-3 year process and it definitely won't include Maurice Jones-Drew, but that high draft pick the Jags will acquire after the 2012 season is over, needs to be spent on other priorities. The Jaguars need offensive lineman, defensive lineman, linebackers, cornerbacks, safeties and the list goes on. Not to mention pass rushers and special teams. The Jags need a lot of work and the only good news is that they have Chad Henne on the roster.… Read more
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I find KHB is terrible because of extremely high prices and awful customer service. Each time I have gotten stuff from them I have been let down on a number of levels. The last and worst example was when I called them about a manual for a late model Beseler CB7. I told them that I was specifically looking for detailed information on alignment. I have had this enlarger since I was 18 or so which means I have had it for around 40 years. It has been shipped a number of times when I moved. They told me that they did indeed have a manual for the enlarger and it did have detailed info on alignment. Bought the manual. When it arrived, it had nothing about alignment except for a phrase in it that said I should purchase the extra technical manual to do the alignment. I called them and they told me that I should have looked at the manual before I bought it! Huh? OK, it was only twelve bucks. So I asked if they could do the alignment. They said yes, they could, it would cost a minimum of $250, more likely $500. I asked them how they know how to align the machine. They told me they had a manual. I asked if I could buy the manual since that was what I wanted in the first place. They said no. They wanted me to bring the enlarger to them and then take it back And that's when things go out of alignment. This is typical of their service and their attitude. I will NEVER buy anything from them again and would recommend nobody does either. Better to wait for something to come up on Craigslist or on forums like this and Large Format Photography, even eBay.
I now this is a long diatribe abut what might seem like a trivial matter, but it was the last straw of many.


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EWS Immobilizer antenna threadfest
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Gnarly Adventurer
Joined: Feb 2006
Location: SE MA
Oddometer: 149
EWS and me.....
This past week in WV:
3 2007 R1200GS motorcycles from MA on a one week trip to ride WV, VA and more based at Snowshoe, WV
2 EWS Failures ( 2 different bikes 2 days apart )
I have a spare which we use on the first bike....the dealer we go to has none in stock for warranty, but comes through with overnight replacement in case we need another....great service at Hammersley in VA.
Second bike...BMW Roadside Assistance....Sorry you are on your own...we don't have anyone in that area under contract. 9 Hours on the side of the road while my buddies ride to get another from the overnight at Hammersley....can't say enough good things about them. Also I met some very helpful people in Richwood,WV. Thank you Four Season's Outfitters.
Yes, I immediately called BMW on North America....I had 9 hours... they were polite and agreed that was unacceptable...I have not heard anything back...THEY PROMISED....the letters will be sent this week!!!
The day got better as I pushed the bike (cooled down by now ) to the gas station next door...in case I got it started... which happened to have a faulty pump nozzle...no notice...which sent a plume of fuel over the bike...they made me pay for the extra gas on the ground and clean up. All the locals knew about it!! We road home through the mountains around 9:30 PM at which I had a close encounter with a large deer....very close...she will be easy to recognize...it says Conti Trail Attack on her left side. I have never been face to face with a live deer before....they have very pretty eyes...I wonder what she thought??. No real harm done...I really love ABS. The hot tub and the bar made everything better at the Inn at Snowshoe.
Back to Hammersley for the third time...6+ hour round trip plus service time.... in three days...for warranty replacement.....nice twisty roads on the way to Lynchburg.
Another motorcycling adventure....all in all it was still a great time.
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RIR brings exposure, money to county
The construction of RIR ranks No. 21 on the list of 24 moments in Henrico history
It began 65 years ago as little more than a dusty oval at a rural fairgrounds. Today, it hosts more than a quarter-million visitors annually, is home to the only major league sporting events in Virginia and perhaps does more than any other single entity to attract national and international attention to Henrico County.
It's the Richmond International Raceway, and its legacy has earned it the No. 21 spot on the Henrico Citizen's list of the most significant moments in Henrico history.
The raceway holds an important spot not only in Henrico history but also in the history of its sport and NASCAR (the National Association for Stock Car Auto Racing). Only three tracks (in Daytona, Fla., Martinsville, Va. and Darlington, S.C.) have continuously hosted NASCAR races at their present locations longer than RIR. Unlike many of the now-defunct tracks that hosted races in the sport's early years, RIR has survived – and thrived.
As a result, it's help stamp Henrico County on the national and international racing landscape.
"We think this adds a lot to the quality of life in this community," said RIR President Doug Fritz, who has been at the helm of the raceway since International Speedway Corporation purchased it from its longtime owners, the Sawyer family, in 1999. "We're very proud to be part of Henrico County and the history of Henrico County. Our entire life has been here in Henrico County.
The last 50 years have been great years for Henrico County, and we like to think that we're some of the reason for that success."
The raceway, which hosts two race weekends annually, generates an estimated $417 million each year in total economic impact for the Metro Richmond region and helps employ nearly 7,000 people, according to the Richmond Metropolitan Convention and Visitors Bureau. Even non-NASCAR fans who live in the county and have never attended a race feel the benefits produced by RIR.
"The economic benefit you can see both directly and indirectly," said John Vithoulkas, Henrico County finance director, who said the county receives $1 million annually in direct real estate, business license tax and business personal property tax payments and hotel taxes. "And that doesn't include sales taxes generated by all the fans."
RIR and tourism officials estimate that the track's events generate $75 million a year in overall tax revenue to the county, state and federal governments.
A changing landscape
It's hard to say how Ted Horn would fare in a modern racecar at RIR today – where drivers exceed 120 mph and sometimes race three-wide – but it's safe to say he was adequately prepared for its first official race, which he won on Oct. 12, 1946 in an open-wheel car that averaged nearly 46 mph. The track was then a half-mile dirt oval at the Atlantic Rural Exposition Fairgrounds known to some as the Strawberry Hill Speedway.
The track held its first NASCAR event April 19, 1953 – a 100-mile race won by legend Lee Petty. Two years later, Paul Sawyer and driver Joe Weatherly purchased the facility, presiding over its growing reputation that led to a second NASCAR race being added to its annual schedule in 1959. The twice-yearly schedule has continued since, and today RIR is one of 13 tracks to host two Sprint Cup Series races a year and one of only 10 to host two Nationwide Series races annually.
In 1968, the track was paved for the first time, and in 1988, it was lengthened to its current and distinctive three-quarter-mile shape. It's the only track on the NASCAR circuit of that length, and drivers and fans alike appreciate its unique elements that often result in exciting, competitive races rather than monotonous ones. RIR's capacity has grown steadily from 58,000 in 1992 to its officially listed capacity of 98,000 today (though a number of races in recent years have attracted crowds of more than 100,000). The raceway's 33-race sellout streak ended in Sept. 2008.
While many other tracks on the NASCAR circuit are located on the outskirts of cities, surrounded by asphalt and little else, RIR is clearly the product of humble beginnings, still sitting adjacent to modest neighborhoods and surrounded by industrial parks and suburban roads.
When ISC bought the facility, it was still sharing some "amenities" with its neighbor, the State Fair of Virginia.
"We still had chicken coops and horse stalls and hen houses and all that," Fritz said.
ISC and RIR have added new amenities during the past 12 years, including the Torque Club, which sits high above the track and offers spectators what Fritz calls "one of the best fan experiences you can have in any sport," and a new LED scoring tower and video screen that debuted last year, allowing every spectator to see the race leaders. Today, "we're considered one of the most premier sports facilities in this country," he said.
Fritz made a point to take advantage of the track's unique setting to develop relationships with its neighbors. He opened the facility to the community, inviting residents of Essex Village and other neighborhoods to enjoy National Night Out cookouts and take pace-car laps around the track. He's also involved track employees in a plethora of community initiatives through the years.
"It's the right thing to do," he said. "We wanted people to see that we're not just the 'Green Giant' across the street. We do care about this community, and a lot of our efforts are focused on the youth."
Wide-reaching impact
The overall impact that RIR has on Henrico County and Metro Richmond from a national and international standpoint may be difficult to judge specifically, but it's clear that the exposure it provides to the region through a sport with an estimated 75 million fans is significant. For those who watch races in person, on television or who listen on radio, Richmond International Raceway is a familiar name.
"We are drawing fans on every NASCAR weekend from all 50 states, and that's great exposure for Henrico County," Fritz said. "Some of the fans come back to visit Henrico County. And this is a part of the country that they may not have seen if not for Richmond International Raceway."
In addition to hosting two weekends of NASCAR racing every year – each of which makes the complex the eighth-largest city in Virginia for one day – the raceway complex hosts dozens of conventions, expos and shows in its expo halls throughout the year, bringing thousands more regional visitors to Henrico County.
When NASCAR switched to a new playoff system in 2004, RIR realized more good fortune as the host of the final race before the 10-race playoff began. Each year since, drivers on the fringe of the playoff chase have come to Richmond anxious to make one final push before the watchful eyes of NASCAR nation.
Late last year, the Richmond Metropolitan Convention and Visitors Bureau launched a proactive effort to encourage businesses and fans to purchase tickets to both of this year's races as a way to solidify RIR's hold on its twice-annual schedule. This year, Atlanta and Fontana, Calif., each lost one of their two races, and Fritz said there's no guarantee from year to year that any track will maintain two races.
"I feel pretty good, but we can't be complacent," he said. "This is very important for us as a community. It's not going to be easy, and it's going to take a lot of work on a lot of people's parts, including mine, to keep two races here.
"But as long as people keep supporting Richmond International Raceway, we're going to be here a long time"
Richmond International Raceway will host its 110th Sprint Cup Series race April 30, one day after it hosts the Nationwide Series race. For tickets or details, visit http://www.rir.com
Short Pump Rotary volunteers help with rebuild, repair
On June 13, the Short Pump Rotary Club partnered with Schnabel Engineering for a day of volunteer work with Rebuilding Together Richmond. Team members (among them [from left] Chris Rufe, Melissa Abraham, Rick Naschold, and Micky Ogburn) completed a variety of repairs and home improvements ranging from painting and landscaping to cabinet installation and fence building.
"It was a privilege to be involved in this project," said club president Melissa Abraham. "The homeowner kept thanking the volunteers, but I think all of us would agree we are the ones who actually benefited. It was an opportunity to help a community member, fellowship with great people and improve our handyman skills." > Read more.
'Proof of Heaven' coming to Glen Allen
Dr. Even Alexander, a New York Times best-selling author who has been featured on Oprah and Dr. Oz, was in town last week to promote his June 27 talk, "Proof of Heaven," at Glen Allen High School.
Alexander (pictured, at right, while Unity of Bon Air church member Harry Simmons interviews him) has written about what he considers to be his journey through the afterlife.
Tickets to this month's event are $25 and will support the new Bon Secours Hospice House being built later this year. > Read more.
A triumphant return
Pixar's 'Inside Out' is a magnificent, emotional ride
Explaining the nuts and bolts of Pixar's new, exciting, innovative Inside Out – really digging into the film's shape-and-color explanation of the human mind – would take up the entirety of this review. And probably three or four more (if movies had instruction manuals, Inside Out's would be the size and general poundage of a cinder block).
It's a complicated movie. So here's the gist, in as simply-put terms can be. > Read more.
Henrico Extension ready to help residents grow SMART Lawns
HCPS students add skills, lobby Congress for technical education
State Police to increase patrols for Fourth of July weekend
Local fifth-grader to perform at Carnegie Hall
Lakeside girl to compete at MLB All-Star Game event
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Jul. 2, 2015Click here to read the print edition.
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Weekend Top 10
Voltaggio to host three-course dinners at Family Meal July 21-22
Fan favorite shines in new West End home
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Obituary – Ruby White
Obituary – Thomas Stewart Gammon
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Short Pump Rotary volunteers help with rebuild, repair
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Innsbrook Rotary celebrates 25 years
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My daughters' other dads
All hail to mothers and the hardest job of all
Cabin fever cures - and blessings
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Athlete of the Week – July 3: Kayla Sell
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CalendarThe Short Pump Ruritan Club is seeking crafters for its 25th annual Short Pump Ruritan Craft Show on October 17 at Short Pump Middle School, 4701 Pouncey Tract Rd. For… Full text


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'GREAT for music - not so much for everything else'
'A bit expensive, Feature-poor in some respects, Low-res screen'
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'slim casing'
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'troublesome touch interface'
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Providence, RI, USA < change city >
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All That Events DJ Up Li...
ALL New England, NH, ME. RI, CT, NY, VT, MA
(978) 204-7364
DJs, Photo Booths, Lighting
1 rating, 1 review, 1 wedding
All That Events is a boutique event company with concierge style service at some of the best prices in the region! We offer: D...
Dragonfly Photography
Newburyport, MA 01950, USA
Photographers, Photo Sites
Dragonfly Photography is "The" creative wedding photography company. It combines vibrant colors and style to that perfectly ca...
DJ Connection
P.O. Box 1512
Pepperell, Ma 01463, USA
DJs, Ceremony Musicians, Ceremony & Reception
DJ Connection has been Serving New England for 30yrs. As New England's Premier Entertainment Company. we have the experience an...
Faith Dugan Photography
79 Connection Street
Newport, RI 02840, USA
5 ratings, 5 reviews, 5 weddings
IF you do not hire Faith as your photographer you will truly miss out. Faith is t...
Crowne Plaza Hotel Provi...
801 Greenwich Avenue
Warwick, RI, United States
(401) 732-6000
Reception Sites, Hotels/Acc...
4 ratings, 4 reviews, 19 weddings
Call Lois Infantolino in sales there- she is a DOLL to work with. Not only did sh...
Carl Anthony
1460 Park Avenue
Cranston, RI, United States
3 ratings, 3 reviews, 4 weddings
Their location is actually Cranston, but their service is SUPERB!!! Each person ...
Hull Grenier Studios
195 River Ave
Providence, RI 02908
3 ratings, 3 reviews, 3 weddings
Brian was so nice and helpful--he went above and beyond on the day of the wedding...
Viking Tours of Newport ...
P.O Box 330
Newport, RI 02840, USA
3 ratings, 3 reviews, 3 weddings
We dealt with Kirtley, who was professional, prompt and super easy. The trolley ...
Five Bridge Inn
152 Pine St
Rehoboth, MA 02769, US
Ceremony Sites, Reception S...
3 ratings, 2 reviews, 5 weddings
FIVE BRIDGE INN--Rehoboth, MA. Tucked away in the woods, the Inn is a perfect and...
Lisa Mancuso Photography
Lynnfield, MA 01940, USA
Photographers, Photo Sites
3 ratings, 2 reviews, 4 weddings
I wanted to extend a HUGE thank you to you for how absolutely beautiful my weddin...


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Results 1 to 4 of 4
June 5th, 2008 #1
Illustrations for ladies...UPDATE!
Hi everyone, here are a few images from the latest update of our blog. Fell free to go and check these, and a lot more images.
A new update every friday!!!!!!
Hide this ad by registering as a memberJune 5th, 2008 #2
Great post, great blog and fantastic characters! Post more!
June 6th, 2008 #3
Original and very sad.
Thanks, it changes from the useful apocalyptic warriors.
June 26th, 2008 #4
hehe I love the look on the guy's face with all the tattoos. He just seems so surprised/curious to have a birthday cupcake! Keep up the good work!
Come check out my site!
RachelCreates -Digital Life and Design