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A proximity effect correction method for electron beam lithography suitable for high voltages and/or very dense patterns applies both backscatter and forward scatter dose corrections. Backscatter dose corrections are determined by computing two matrices, a "Proximity Matrix" P and a "Fractional Density Matrix" F. The Proximity Matrix P is computed using known algorithms. The elements of the Fractional Density Matrix are the fractional shape coverage in a mesh of square cells which is superimposed on a pattern of interest. Then, a Dose Correction Matrix D is computed by convolving the P and F matrices. The final backscatter dose corrections are assigned to each shape either as area-weighted averages of the D matrix elements for all cells spanned by the shape, or by polynomial or other interpolation of the dose correction field defined by the D matrix. The D matrix also provides a basis for automatic shape fracturing for optimal proximity correction. Optionally, forward scattering correction may be included in the correction process. Forward scattering correction consists of boosting the dose applied to shape i by a factor bi. These boost factors are computed in a separate and independent step which considers only forward scattering. They are combined with those resulting from the backscatter correction scheme either by simple multiplication to form the final correction factors, or by inputting them to the backscatter correction scheme as numerical weights for each shape.
1. A backscatter correction method for electron beam lithography suitable for high voltages and small feature sizes and/or very dense patterns so as to make an exposure pattern less sensitive to proximity effects, the exposure pattern consisting of a plurality of shapes, said method comprising the steps of:
superimposing on said pattern a mesh of square cells Cij ;
computing a proximity matrix P with elements Pkl (k=-n, . . . , n; l=-n, . . . , n), where k and l label the surrounding cells such that the term Pkl refers to the interaction of cell Cij with cell Ci+k,j+l ;
computing a fractional density matrix F, such that cells Fij of matrix F are a fractional shape coverage in cells Cij ;
extending the F matrix by adding a rectangular collar of n elements around the F matrix representing empty space surrounding the pattern;
computing a dose correction matrix D by convolving the P and F matrices as: ##EQU7## assigning a dose correction di to each shape as a function of the dose correction matrix; and
computing final doses from the dose corrections di and modifying the exposure pattern according to these final doses.
2. The method as recited in claim 1 wherein said step of assigning is performed based on area-weighted averages of D matrix elements for all cells spanned by the shape.
3. The method as recited in claim 1 wherein said step of assigning is performed by interpolation of the dose correction field defined by the D matrix.
4. The method as recited in claim 1 wherein a final backscatter-corrected dose si for shape i is given by
si =1+η+di,
where where η is the ratio of total backscattered energy to total forward scattered energy.
5. The method as recited in claim 4 further comprising the steps of:
computing a forward scattering correction boost bi separately and independently of any other kind of correction; and
multiplying the computed backscatter dose correction si with the computed forward scattering correction to arrive at said final dose corrections.
6. The method as recited in claim 1 further comprising the steps of:
computing a forward scattering correction boost bi ;
using said forward scattering correction boost bi to weight said F matrix, said D matrix being computed with the weighted F matrix to determine said backscatter correction term di ; and
wherein said step of assigning is performed by determining a final dose ti as
ti =(1+η)bi +di,
where η is the ratio of total backscattered energy to total forward scattered energy.
1. Field of the Invention
The present invention generally relates to the technology of electron beam lithography, and more specifically to a method for proximity effect correction in high voltage electron beam lithography systems. The invention may also advantageously be applied to proximity correction of very dense patterns at lower beam voltages.
2. Description of the Prior Art
U.S. Pat. No. 4,264,711 issued Apr. 28, 1981, to Greeneich entitled METHOD OF COMPENSATING FOR PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY describes a process of constructing microelectronic circuits on a semiconductor chip wherein electron-beam lithography is utilized to fabricate high resolution resist patterns. The resolution however, is limited by proximity effects which are due to scattering of the electron-beam as it passes through the resist. In the disclosed method, those proximity effects are compensated for by making the energy that is absorbed by the resist from the electrons, substantially greater at the perimeter of each shape in the pattern than at the interior of those shapes by using extra energy dosage at the perimeter.
U.S. Pat. Nos. 4,426,564 and 4,504,558 issued Jan. 17, 1984, and Mar. 12, 1985, to Bohlen et al. entitled METHOD OF COMPENSATING THE PROXIMITY EFFECT IN ELECTRON BEAM PROJECTION SYSTEMS describes a system for compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry and exposing selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, a specific mask with corresponding correction openings can be used which is applied with the same, or with a different electron beam intensity. In a particularly advantageous manner, the correction of the proximity effect can be achieved when complementary masks are used; the correction openings for the partial areas of the once complementary mask are arranged in the other complementary mask. The proximity effect is then corrected without an additional exposure step. For measuring the proximity effect, a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process of the photoresist is discontinued prematurely. The ridge edges which in the presence of proximity effect are asymmetrical, can be easily detected under the microscope.
In U.S. Pat. No. 4,498,010 issued Feb. 5, 1985, to Biechler et al., entitled VIRTUAL ADDRESSING FOR E-BEAM LITHOGRAPHY, a technique is performed in a fixed address particle beam lithographic system where the writing is performed in the normal manner for writing a pattern, for example, a stripe on a resist having a selected feature width except that an additional row of alternate pixels is written either before or after the selected feature is written. The alternate pixels, when the resist is developed, will provide a feature width of approximately 1/2 a pixel wider than the selected feature width due to blurring of the latent image caused by scattering of the particle beam within the resist. Thus, the resolution of selectable feature widths is enhanced with little or no loss of throughput. The same technique can also be utilized to lengthen a feature by 1/2 a pixel width. The technique is disclosed primarily in a raster scan machine but also disclosed is the technique in a vector scan machine. Also disclosed is a flow chart showing the invention used while preparing the data to be written by the machine.
In U.S. Pat. No. 4,520,269, issued May 28, 1985, to Jones entitled ELECTRON BEAM LITHOGRAPHY PROXIMITY CORRECTION METHOD, proximity effect is reduced or eliminated by breaking each shape of a lithographic exposure pattern into two parts, a perimeter part having a width on the order of the lithographic exposure pattern minimum line width and the remaining central part or parts (if any) which are completely surrounded by the perimeter part. The lithographic exposure pattern is then modified by moving or setting back the edges of each central part away from the perimeter part which surrounds it (similar to reducing the size of the central part) to form a nominally unexposed band separating each central part from the perimeter part which surrounds it.
The width of the nominally unexposed band in the modified exposure pattern is preferably chosen as large as possible so long as the condition is met that upon developing a radiation sensitive layer directly exposed to the modified exposure pattern, the nominally unexposed band develops (i.e., dissolves, resists dissolution, or is otherwise modified) substantially as it were also exposed. The nominally unexposed band is exposed, in fact, by electrons scattered from the directly exposed part(s) of the shape (the perimeter part plus the central part, if any). The width of the nominally unexposed band is preferably about twice the edge bias applied to outside edges of each shape.
European Patent Application 83106013.2, Publication Number 0097903, by Komatsu, filed June 20, 1983, entitled METHOD OF ELECTRON BEAM EXPOSURE, describes a method of electron beam exposure comprising selectively exposing a resist film, on a substrate a plurality of times with an electron beam whose dose is lower than a desired dose sufficient to produce a difference in molecular weight between the exposed area and nonexposed area, the cumulative dose corresponding to said desired dose.
European Patent Application 83303812.8, Publication Number 0098177, filed June 30, 1983, by Osada, entitled SCANNING ELECTRON-BEAM EXPOSURE SYSTEM, describes a scanning electron-beam exposure system for exposing a desired rectangular area which is larger than a predetermined maximum rectangle wherein the desired rectangular area is divided into a plurality of areas. Two sets of such divided areas are shifted two-dimensionally from each other. The one set of divided areas are exposed with half of a predetermined electron-beam dose and the other set of divided areas are also exposed with half of the predetermined dose. This serves to reduce undesirable effects at boundaries between scanned areas.
European Patent Application 83302399.7, Publication Number 0097417, filed Apr. 28, 1983, by Owen, entitled ELECTRON BEAM LITHOGRAPHY, describes an electron beam lithography system wherein a beam of incident electrons exposes a preselected circuit pattern in a thin resist layer deposited on top of a substrate to be etched. Some of the electrons scatter from the substrate back into the resist layer producing an undesired exposure which produces variable resolution of features. In accordance with the disclosed technique, the region of the resist which is complementary to the desired circuit pattern is also exposed by an electron beam which has been adjusted to produce an exposure approximating that due to backscattering. This additional exposure removes the spatial variability in resolution attainable by the electron beam lithography.
European Patent Application 85303998.0, Publication Number 0166549, filed June 5, 1985, by Pavkovich, entitled METHOD FOR PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY SYSTEMS, describes a method for electron beam lithography writing of a micro-miniature pattern P(x,y) in a resist-coated workpiece, the method comprising the steps of calculating, at a plurality of grid points on the workpiece, the electron dosage required to produce uniform exposure of the pattern P in accordance with the expression ##EQU1## where S represents the backscattered exposure distribution produced by an incident electron beam, and A, B and β are constants. The pattern is then written on the workpiece with the electron beam while varying the applied electron dosage in accordance with the calculated values of required electron dosage, in a preferred embodiment, the electron dosage applied by the electron beam lithography system is varied between a number of discrete levels. The features of the pattern P are partitioned into subfeatures in accordance with the calculated values of required electron dosage. The subfeatures are then assigned to one of the discrete dosage levels of the system.
Russian Patent Application 938339, publication date June 23, 1982, by Ulianov, entitled METHOD OF ELECTRONOLITHOGRAPHY, describes a technique to eliminate the influence of scattered electrons during the exposure of a resist in electron beam lithography by surrounding the border areas between the semiconductor substrate and resist with an electrical field which deflects electrons toward the semiconductor substrate.
In IBM Technical Disclosure Bulletin, Vol. 20, No. 9, February 1978, at page 3809, the publication "Partitioning E-Beam Data For Proximity Corrections" by T. P. Chang et al. describes an algorithm for solving the proximity effect problem due to the partial exposure of resist near a shape written by an E-beam due to electron scattering in the resist and substrate. The shape written near to the original one should have its exposure corrected because of the fact that some of the resist in which it is written has been partially exposed in writing the first shape. There are two steps to this method for solving this problem:
1. The second shape must be subdivided into two (or more) shapes so that it now consists of a shape which lies on unexposed resist and one which lies on the resist partially exposed by writing the original shape which preceded it.
2. The subshapes can now be given different exposures, depending on whether they lie in partially exposed or unexposed resist.
In IBM Technical Disclosure Bulletin, Vol. 26, No. 12, May 1984, at page 6291, the publication by W. J. Guillaume et al. entitled "Proximity Correction Technique for Electron-Beam Tools" points out that proximity correction algorithms are required to vary electron-beam dose levels to compensate for intra proximity effects and tool focus deviations and discloses a method for determining which shapes are to be presented to the proximity correction algorithm for dose assignment. The technique provides smoother dose transition, consistent dose assignment, and dramatically reduces proximity correction algorithm processing time.
The method operates on electron-beam mask writing shape data with the following steps.
1. The outside edges of the shapes are separated from the interior, reflecting the observation that dose assignment to the edges is far more critical than dose assignment to the interior.
2. The interior shapes are assigned an empirically determined dose and are not corrected any further, dramatically reducing proximity correction algorithm processing time.
3. The edges are divided into coarse segments of 40-50 micrometers to minimize the number of neighboring shapes and reduce the overall execution time.
4. The neighborhood of shapes in the immediate vicinity of each coarse segment is built by including all shapes within a predefined radius around the coarse segment. This occurs in an algorithmically reproducible manner, thus assuring that similar shapes in similar environments will be assigned similar doses.
5. All of the coarse segments are subdivided further to provide more accurate dose assignment in small local areas.
6. The proximity correction algorithm assigns a dose to each subdivided coarse segment.
7. After dose assignment is completed, shapes with the same dose are merged together and an electron writing beam pattern is produced.
In the publication entitled "Proximity effect in electron-beam lithography", by T. H. P. Chang in J. Vac. Sci. Technol., Vol. 12, No. 6, November/December 1975, at page 1271, a simple technique for the computation of the proximity effect in electron-beam lithography is presented. The calculations give results of the exposure intensity received at any given point in a pattern area using a reciprocity principle. Good agreement between the computed results and experimental data was achieved.
The publications in J. Appl. Phys., 50 (6), June 1979, at pages 4371, 4378 and 4383, "Corrections to proximity effects in electron beam lithography. (I. Theory) (II. Implementation) (III. Experiments)" by M. Parikh disclose three correction techniques for proximity effects. The self-consistent technique computes the incident electron dose such that identical average specific exposure occurs in each written shape of the pattern. A unique solution, that depends only on the form and on the magnitude of proximity function, is obtained. The unaddressed-region compensation technique attempts to compensate for proximity effects in regions between shapes. This, however, leads to computational complexities and impracticalities. The shape-dimension adjustment technique attempts to compute dimension of exposed shapes such that the shapes developed in the resist will have the designed dimension. A set of nonlinear (and impractical) equations are obtained in this case. The implementation of these techniques and the experimental results obtained therefrom are the subject of the two succeeding papers (II and III).
In the publication, "Proximity effect correction for electron beam lithography by equalization of background dose" by G. Owen et al., J. Appl. Phys., 54 (6) June 1983, at page 3573, it is disclosed that compensation for the proximity effect in electron lithography can be achieved by equalization of the backscattered dose received by all pattern points. This is accomplished by exposing the reverse tone of the required pattern with a calculated beam diameter and electron dose.
The publication "Proximity effect correction calculations by the integral equation approximate solution method" by J. M. Pavkovich, J. Vac. Sci. Technol., B4 (1) January/February 1986, at page 159 describes a method which provides a relatively accurate approximate solution to the integral equation which is easy to calculate and which provides information on where features should be fractured to obtain good dose compensation.
The publication "Measurements of electron range and scattering in high voltage e-beam lithography" by P. M. Mankiewich et al., J. Vac. Sci. Technol., B3 (1) January/February 1985, at page 174, states that proximity effect from electron scattering is a major limitation to using e-beam lithography for high density, submicron patterns At higher voltages, the proximity effect becomes a relatively uniform background dose without the local pattern distortions characteristic of conventional e-beam lithography at lower voltages. However, the total magnitude of the effect is not reduced and its variation over longer distances remains a serious problem.
The publication, "Proximity correction on the AEBLE-150" by O. Otto et al., J. Vac. Sci. Technol., B6 (1) January/February 1988, at page 443, describes a variant of Parikh's self-consistent method. Rather than requiring equal average exposure for every shape, this method requires equal exposure at a single "test point" in each shape or sub-shape. The locations of the test points are chosen according to specific rules. As in Parikh's method, a set of simultaneous equations is constructed and solved numerically to obtain the doses to be applied to each shape.
The publication, "Proximity correction on a vector scan e-beam machine by dosage variation" by B. J. Hughes et al., Microelectronic Engineering, 9 (1-4) May 1989, at page 243, describes yet another variation on Parikh's self-consistent method. As in Parikh's method, the doses are chosen to equalize the total average exposure received by each shape or sub-shape. The influence coefficients which define the resulting simultaneous equations are computed by a technique of "dose sampling" at meshes of grid points which are placed over each shape.
The publication, "Proximity effect correction for high-voltage electron beam lithography" by T. Abe et al., J. Appl. Phys., 65 (11) June 1989, at page 4428, describes an approximate dose correction method which is especially effective for a high acceleration voltage. An approximate formula is described which expresses the backscatter dose correction at any point as a simple sum of contributions from nearby shapes.
An object of the present invention is to provide a method for proximity effect correction in electron beam lithography, suitable for high beam voltages and/or for very dense patterns.
Another object of the present invention is to provide a method for proximity effect correction in electron beam lithography by dose correction.
A further object of the present invention is to provide a method of dose correction for reducing proximity effects in high voltage electron beam lithography wherein cells are imposed on a chip pattern and a correction process is applied based on fractional shape density matrices of patterns.
Still another object of the present invention is to provide a proximity effect correction technique for electron beam lithography including backscattering corrections and forward scattering corrections.
According to the present invention, the backscatter dose corrections are determined as follows. The process begins by superimposing on the pattern of interest a mesh of square cells, whose size is β/a. To compute the backscatter correction required for shapes within a given cell, its interaction with all other cells with a radius of cβ must be considered. β is the electron backscatter range, and values for a and c may be empirically determined. Two matrices are computed, a "Proximity Matrix" P and a "Fractional Density Matrix" F. The Proximity Matrix P is computed using any of a variety of approximate or exact linear solutions to the backscatter problem. The elements, Fij, of the Fractional Density Matrix are the fractional shape coverage in cells Cij. For computational convenience, the Fractional Density Matrix is extended by adding a rectangular "collar" of elements around it. Then, a Dose Correction Matrix D is computed by convolving the P and F matrices. The final backscatter corrections are assigned to each shape either as area-weighted averages of the D matrix elements for all cells spanned by the shape, or more accurately by polynomial or other interpolation of the correction field defined by the D matrix.
The Dose Correction Matrix produced by this method contains sufficient information to be useful as a basis for making automatic decisions on shape fracturing for optimal proximity correction.
Optionally, forward scattering correction may be included in the correction process. Forward scattering correction consists of boosting the dose applied to shape i by a factor bi. These boost factors are computed in a separate and independent step which considers only forward scattering. They may be computed using any desired algorithm; for example, the one specified by Parikh in the J. Appl. Phys. publication. These boost factors may be combined with those resulting from the backscatter correction scheme in two ways. The dose correction factors resulting from each separate phase of correction may simply be multiplied together to form the final correction factors. Alternatively and more accurately, the forward-scatter boost factors may be inputted to the backscatter correction scheme as numerical weights for each shape.
The foregoing and other objects, aspects and advantages of the invention will be better understood from the following detailed description of the preferred embodiment with reference to the drawings, in which:
FIG. 1 is a graph of postprocessor runtimes, for a fragment of a dense memory chip level, as a function of β;
FIG. 2 is a schematic diagram of a mesh of cells superimposed on a chip pattern according to the principles of the present invention;
FIGS. 3(a) and 3(b) are flow diagrams illustrating the steps of the backscatter correction algorithm in two preferred embodiments according to the invention;
FIGS. 4(a) and 4(b) are flow diagrams illustrating two preferred embodiments of the method used to provide full correction including both forward and backward scattering effects;
FIG. 5 is a graph showing cpu times for backscatter correction, as a function of β, for a fragment of a dense memory chip level; and
FIG. 6 is a graph showing cpu times for backscatter correction for a relatively sparse proximity test pattern.
In lithographic methods of fabricating integrated microelectronic circuits,it is common practice to cover a layer of some material which is to be patterned with a layer of electron sensitive resist. Subsequently, variousportions of the resist which correspond to the pattern that is to be formedon the underlying material are bombarded with a scanning electron beam. This changes the solubility of the resist in the bombarded regions. Then either the bombarded portions of the resist or the unbombarded portions may be selectively removed by exposing the resist to a suitable etchant and the portions of the resist which thereafter remain are then used as a mask for patterning the underlying material.
Conventionally, the bombarding electrons have energies in the range 15 to 25 keV. However, for practical engineering reasons (which are not directlyrelevant to the present invention), it is becoming increasingly common for higher electron voltages, in the range of 50 to 100 keV, to be used.
A limitation to the effectiveness of the electron beam lithographic technique is caused by electron scattering. Electron scattering refers to the fact that as the electron beam passes through the resist, some of those electrons collide with the molecules of the resist and are thereby scattered in various directions. Thus, the amount of energy which a particular point in the resist receives is not simply a function of the energy of the overlying electron beam, but it is also a function of the energy and all of the electron beams which are in close proximity to that point. This is a problem because all of the points in the resist portions that are bombarded do not receive the same number of scattered electrons. Consequently, the solubility of the bombarded resist portions varies from one point to another, and this limits the fidelity with which the resist can be patterned.
The electron scattering effects are usually represented quantitatively by adouble Gaussian model. This model represents the radial distribution f(r), or energy deposited at a given depth in a substrate by electrons scatteredfrom a nominal point source, as follows: ##EQU2##The forward scattering width α is in practice used to account both for electron scattering on entry to the substrate and for the finite beam spread in real e-beam systems. For high-resolution applications, the beam spread dominates and α may be as much as 25% of the minimum feature size. The backscattering width β is typically 3 to 4 μm at 25 keV,and is usually larger than the minimum feature size. η, the ratio of total backscattered energy to total forward scattered energy, is typically0.5 to 0.9 at 25 keV.
The effect of increased voltage on the parameters α, β, and η is as follows. The relationship of α to minimum feature size probably will not change significantly (i.e., tools will always be operated close to the limits of their resolution). The ratio η dependsonly weakly on beam voltage (i.e., the importance of backscattering does not diminish as beam voltage increases). β increases approximately asthe 1.7th power of the electron energy. Thus at 50 keV, typical β values are 9 to 15 μm.
In the prior art, it is known that to obtain high quality patterning at small critical dimensions, the backscattering proximity effects must be corrected. For leading edge applications, it is also necessary to correct for forward scattering effects. The objective of such corrections is to approximately equalize the total energy density deposited in all shapes irrespective of their local environments. Such correction is required bothat conventional electron beam energies of 15 to 25 keV, and also at higher energies (above 25 keV).
For vector scan and shaped beam machines, where the applied electron dose can be adjusted dynamically on a shape-by-shape basis, the preferred correction method is to adjust the electron dose applied to each shape according to its local environment. The required dose for each shape must be computed numerically, according to some algorithm which takes account of the local environment of the shape.
The most efficient existing methods and algorithms for computing these corrections approximate the dose correction for each shape as a sum of contributions from each nearby shape, the individual contributions being afunction only of α, β, η, and the relative geometrical configurations of the pair of shapes concerned. Self-correction of a shapeis not a special case for these algorithms. Such an algorithm is disclosed,for example, by Pavkovich in the J. Vac. Sci. Technol. publication.
Proximity correction programs incorporating such algorithms give good results, and have acceptable CPU time requirements, for 25 keV lithographyat all feature sizes down to 0.5 μm. For example, for dense patterns at 0.5 μm minimum feature sizes, in chips on the order of 5 mm square, with 25 keV lithography, the computational effort can be on the order of 103 to 105 CPU seconds on an IBM 3090 mainframe computer.
However, as minimum feature sizes shrink to 0.25 μm and below, and as high voltage electron beam tools come into use, the CPU time usage of these existing methods increases dramatically. For the above example, if the features are shrunk to 0.25 μm and the electron beam voltage is increased to 50 keV, the required CPU time will increase to be 50 to 100 times larger. The situation rapidly gets even worse as electron energy increases and feature sizes decrease.
This runtime problem arises for the following reasons. In computing the backscattering corrections, it is necessary to consider an interaction range around each shape of radius cβ (where c is typically about 2). Therefore, the computational effort involved is proportional to β2. Doubling the electron voltage approximately quadruples β, and thereby increases the runtimes roughly 15-fold. In shrinking agiven pattern to smaller feature sizes while retaining exactly the same total number of shapes, the computational effort is also proportional to d-2, where d is the minimum feature size. This follows from considerations of mean shape density. Combining these effects, one obtainsthe prediction of dramatic increases in cpu time stated above.
FIG. 1 is a graph showing experimental verification of the predicted dependence of runtime on β at a constant minimum feature size of 0.5 μm. The input to this experiment was symbolic design data for a small fragment of a dense memory chip level. FIG. 1 shows the cpu time usage of an IBM 3090 computer, as a function of β, for the postprocessor program which prepares this data for exposure on the IBM EL-3 shaped beam tool. Also shown is the proportion of this time devoted to proximity correction. The predicted β2 dependency is clearly exhibited, and at β=12 μm, proximity correction accounts for about 96% of thetotal runtime.
Such increases in CPU time usage are not merely undesirable cost-wise, but are actually so dramatic as to make the proximity correction process completely impracticable for large commercial chip designs. The implied runtimes are on the order of hundreds of CPU hours.
A new method for dose correction in high voltage, high-resolution e-beam lithography is disclosed herein. The method can give accurate results withrelatively modest CPU time requirements, and the CPU time dependence on β and minimum feature size is the exact inverse of existing algorithms.
The method is first described as applied purely to long range (backward) scattering correction. Its extension to include forward scatter correctionis then disclosed.
As shown in FIG. 2, a mesh of square cells, whose size is some fraction of β, for example β/a, is superimposed on the pattern of interest. Each cell is labeled by a pair of integers in a (row, column) notation, starting from (1,1) at the top left. Thus, for a chip size of, for example, X by Y, the cells are denoted Cij (i=1, 2, . . . , M; j=1, 2, . . . , N), where ##EQU3##and the "I" operator truncates to the next smaller integer.
a is chosen such that, to within some acceptable tolerance such as a few parts per thousand, the backscattered energy density delivered to any point in the pattern by shapes (or shape fragments) in a given cell is independent of the exact distribution of shapes (or shape fragments) within the cell. Thus, this energy density depends only on β, the fractional shape coverage within the cell, the dose applied to shapes in the cell, and the distance from the center of the cell to the point concerned. Such a choice of cell size implies that, to a similar tolerance, all shapes or shape fragments within the cell may be assigned the same dose after backscattering corrections have been applied.
To compute the dose correction required for shapes (or shape fragments) within a given cell, its interaction with all other cells within a radius cβ must be considered. For convenience of presentation, this circularinteraction range is expanded to its exscribed square (conceptually increasing the required work by about 27%). Thus, the interaction of each cell with approximately (2ac)2 other squares must be considered Note that this number is independent of β. If
n=I(ac)+1, (4)
then the number of cells influencing any given one is (2n+1)2.
Suppose now that the cell of interest, together with the (2n+1)2 -1 surrounding ones, are completely filled with shapes. Then existing linear-combination algorithms, such as provided in the Pavkovich J. Vac. Sci. Technol. publication, would approximate the dose correction for the cell of interest by a sum of terms, each term being a function only of β and the relative geometrical configuration of two cells. The individual cell-cell correction terms defined by such an algorithm may conveniently be arranged into a matrix, the "Proximity Matrix". This matrix is denoted as P, with elements Pkl (k=-n, . . . , n; l=-n, . .. , n). k and l label the surrounding cells such that the term Pkl refers to the interaction of cell Cij with cell Ci+k,j+l. Thus, POO is the self-correction term. For convenience, the discussion hereis expressed in dose units such that the base dose (that applied to an infinitely large shape) is 1.0. Then the dose to be applied to an infinitely small isolated shape is (1+η) and the sum of all elements of the proximity matrix (for sufficiently large n) is -η. Note that the Proximity Matrix is negative definite, because the dose reductions mandated by the presence of nearby shapes are cumulative; there is no cancellation of terms of opposing sign when the correction terms are totalled up.
In its simplest form, the backscatter correction method is now summarized as follows with reference to FIGS. 3(a) and 3(b):
Step 1. Choose suitable values of c and a.
Step 2. Use any prefeHxed linear-combination proximity correction algorithmto compute the Proximity Matrix P.
Step 3. Process the pattern data to compute a "Fractional Density Matrix" F, such that Fij is the fractional shape coverage in cell Cij. This is a straightforward "binning" operation; no computationally intensive sorting is needed. Fij ranges from 0.0 for an empty cell to1.0 for a completely full cell.
Step 4. For computational convenience, extend the F matrix by adding a rectangular "collar" of elements around it. The collar is of width n elements, and all of these elements have the value zero. Thus the extendedF matrix has elements F1-n,1-n and FM+n,N+n as its top left and bottom right corners respectively. This collar represents the empty space surrounding the pattern. It is not an essential feature of the invention.
Step 5. Compute a Dose Correction Matrix D by convolving the P and F matrices as: ##EQU4##Step 6. Assign final dose corrections to each shape, either as area-weighted averages of the D matrix elements for all cells spanned by the shape (FIG. 3(a)), or more accurately by averaging over the shape a suitable polynomial or other interpolation function approximating the correction field defined by the D matrix (FIG. 3(b)).
If the resulting dose correction for shape i is denoted by di, then with the convention that base dose=1.0 and with the above definition of the Proximity Matrix, the final backscatter-corrected dose si for shape i is given by:
si =1+η+di (6)
The conceptual validity of this method is now addressed. In the limit as a→∞ (i.e., infinitely small cells), all cells are either fullor empty and the F matrix elements are all 0 or 1. This algorithm then reduces to an implementation of existing methods by numerical integration.Therefore this approach is conceptually valid. Its utility depends on how small a value of a may be used in practice to give acceptably accurate results.
Next, the CPU time requirements are analyzed step by step.
In Step 1, default values of the parameters c and a could in practice be chosen by experiment, once and for all, to give a prescribed accuracy for any possible pattern.
Step 2 involves computing a relatively small local convolution matrix (because of symmetry, only about (2n+1)2 /4 terms need be explicitly computed). Its runtime would be insignificant.
Step 3 is only included for convenience of presentation, and might be omitted from a practical implementation.
Steps 4 and 6 require only a single pass through the pattern data. Again, the runtime would be insignificant.
Step 5 is the computationally intensive one. It requires a total of
Nflop =2(2n+1)2 MN (7)
floating point operations (multiplications and additions). Since n is independent of β (Equation (5)), Equations (2) and (3) show that the runtime would be proportional to β-2. In shrinking a given pattern to smaller feature sizes, the total number of squares MN would decrease correspondingly. Thus, in this situation the runtime dependency on minimum feature size is d2.
The CPU time requirements of the new method are now compared with those forexisting algorithms.
The above analysis clearly shows that, as β increases and d decreases,the new algorithm must at some point become more efficient than the existing ones. The precise crossover point depends on the relative values of K1 and K2 in the expressions ##EQU5##for the runtimes of programs embodying existing algorithms, and ##EQU6##for the runtime of a program embodying the new algorithm. For the existing algorithms, K1 is determined by a relatively lengthy computation required to generate the interaction term for two rectangles or other shapes of arbitrary size and relative orientation. For the new algorithm, each cell-cell interaction is accounted for by a single multiply-and-add operation. However, the value of would depend critically on the required cell size (i.e. , on a). Comparing Equations (2), (3), (4), and (7), one sees that the runtime is proportional to a4.
In practice, the value of a required to achieve a specified worst relative error in the computed total doses for a real pattern is considerably smaller than predicted from naive consideration of worst-case errors in the individual cell-cell interaction terms. The reason for this is that Equation (5) specifies convolution of a negative definite matrix (P) with a positive semi-definite one (F). This implies that there is no cancellation of terms with opposite signs. Therefore, the relative errors in the final Dose Correction Matrix cannot be worse than the worst-case error in any individual cell-cell interaction. Moreover, for the final doses to approach this worst-case relative error would require construction of a pathologically bad distribution of shapes around a givencell, such that every surrounding cell was approximately half full of shapes, with the shapes in every cell distributed to cluster away from thegiven cell. In the context of, for example, a 20 by 20 local convolution, such a pathologically bad distribution is vanishingly unlikely to occur, even in a large chip, for real patterns. Instead, for practical applications, the local convolution would "wash out" the errors in individual cell-cell terms by cancellation of errors with opposite signs. In practice, therefore, the relative errors in the final doses would be expected to be much smaller than the worst-case error in individual convolution terms.
Another factor affecting the relative values of K1 and K2 is vectorizability. The convolution of Equation (5) is ideally suited for usewith pipelined vector processing hardware. By contrast, the "neighborhood search" procedures required by existing prior art algorithms are not suited to such hardware.
The theoretical discussion of CPU time requirements is now completed. Some other practical details and implications of the invention are discussed next.
A practical implementation of the convolution Equation (5) requires that not only the densest of patterns be efficiently corrected, but also relatively sparse ones where many cells are completely empty. This may be achieved by flagging empty cells and omitting them from the convolution.
Memory constraints might prohibit retention in memory of the entire F and Dmatrices for a large chip. In this case, the convolution may be carried outin a segmented manner.
The backscatter correction method of the present invention has application to automatic shape fracturing. Shape fracturing is the process of breakingup a shape into two or more smaller shapes. In the context of proximity correction, this is desirable if the corrected doses which would be assigned to the sub-shapes differ significantly from the average correcteddose which would be assigned to the entire original shape. This in turn depends on the detailed local environment of each shape. Existing prior art postprocessor programs are not in general very useful for this kind ofshape fracturing and in certain circumstances, these programs may do an inadequate job of proximity correction.
The Dose Correction Matrix which is calculated in the course of backscattercorrection by the method of the present invention provides an ideal database for making decisions on shape fracturing. The dose corrections computed for all cells spanned by a large shape are simply compared and fracturing decisions are made based on the variations in these values across the shape. Thus, the method of the present invention disclosed herein provides an ideal basis for smart, automatic shape fracturing.
The method of the present invention also provides for incorporation of forward scattering corrections, and this aspect is now described. Physically in the lithography process, the requirement for forward scattering corrections arises as follows. The effect of forward scatteringis that some fraction of the dose delivered to a shape spills just outside the boundary of the shape. For portions of the shape which abut other shapes, this does not matter because there is, to a good approximation, anequal and opposite spillage from the abutting shape. But for "outside perimeters", that is, parts of the shape boundary which abut empty space, this constitutes a real loss of dose from the boundaries of the nominal shape. Thus, the forward scattering correction essentially consists of boosting the dose applied to shape i by a factor bi to correct for this spillage. If f is the net fractional dose spillage from a shape, thenthe appropriate factor will be roughly 1/(1-f). In practice, numerous different recipes for forward scatter correction exist in the prior art; however, they all seek to achieve objectives similar to that just described.
This physical picture has two important implications. Firstly, forward scattering correction, because of its short range, requires explicit consideration of the immediate (abutting) environment of each shape. Therefore, an "average shape density" approach is not applicable. Secondly, the forward and backward scattering corrections are at a certainlevel of approximation mathematically separable. This separability is ultimately a consequence of the difference in length scales between the forward and backward scattering effects. It leads directly to the herein-disclosed methods for inclusion of forward scattering correction.
In all cases, the first step is to compute forward scattering boost factors, separately and independently of any other kind of correction. Forcomputing these factors, any desired or convenient existing algorithm may be used. For example, one could use the algorithm disclosed by Parikh in the J. Appl. Phys. publications, with the backscatter correction turned off (i.e. , with β=η=0). In any case, since the interaction of each shape with only relatively few abutting neighbors need be considered,the CPU time needed for forward scatter corrections is expected to be insignificant compared with that needed for backscatter corrections.
In one preferred embodiment of the full correction method, the dose correction factors to account for backward scattering are then computed, completely independently of the forward scatter, using the hereinabove-disclosed method. The back and forward scatter correction factors are then multiplied together to form the final correction factor. This process is illustrated by the flow diagram of FIG. 4(a). In terms of the computed forward scatter boost factor bi, and the backscatter correction si defined by Equation (6), the final dose ti for shape i is given by:
ti =bi si (10)
In a second preferred embodiment of the full correction method, the boost factors bi resulting from the forward scatter calculations are used as input data to the hereinabove-disclosed backscatter algorithm. They areused as weights for each shape during Step 3, the computation of the Fractional Shape Density matrix F. In effect, each shape is assigned a "grey-scale" level. With this change, it is possible for an element of F to exceed 1.0. Other details of the backscatter correction through to computation of the dose correction term di are unchanged.
This method is more accurate than the first embodiment, because it explicitly includes the "spilled dose" from forward scatter into the backscatter calculation. This removes the biggest approximation inherent in assuming complete separability of the forward and backward scatter problems. This embodiment is illustrated by the flow diagram of FIG. 4(b).In terms of the forward scatter boost factor bi and the backscatter correction term di (see Equation (6)), the final dose ti for shape i is now given by:
ti =(1+η)bi +di (11)
where the di is now computed by the above-specified method but using the weighted version of the Fractional Density Matrix.
Practical implementations of the backscatter algorithm have been made in two computer programs, denoted programs A and B. Program A is a straightforward translation of the algorithm of FIG. 3(a) into FORTRAN. Assuch, it does not include any interpolation of the final dose correction field. A segmentation capability is included to permit processing of arbitrarily large patterns. The matrix convolution is coded exactly as written in Equation (5), with no tests for sparseness (except that the range of the convolution is limited to the exscribed rectangle of the pattern). This program is run on a conventional IBM 3090 computer with no vector processing facilities. The computer achieves peak hardware speeds of about 10 to 15 Mflops for the kind of computations required. Program B is identical to program A, except for the coding of the matrix convolution. The convolution is coded in optimized S/370 assembler and takes advantage of the S/370 Vector Facility. The latter is a pipelined vector processor with peak hardware speeds of 100 Mflops for the kind of computations required here. The assembler routine includes tests for sparseness in the Fractional Density Matrix and takes advantage of the symmetry of the Proximity Matrix.
A first test pattern in the form of a small fragment (approximately 1% of the total chip) of a dense level (ROX) of a 64K SRAM chip with 0.5 μm minimum feature size was used. The characteristics of this first test pattern are as follows:
Size: 230 by 320 microns
Number of Rectangles: 16716
Shape Coverage: 33.9%
Shape Density: 229 shapes per 1000 square microns
All calculations were carried out for η=0.6 and with the interaction range cβ set at 2β. For η=0.6, the maximum possible range ofbackscatter-corrected doses is from 100% to 160% of the base dose. For thispattern, the doses computed by the existing postprocessor range from 122% to 150% of base dose at β=3.0 μm and range from 130% to 154% of base dose at β=12.0 μm. These dose ranges would be considerably greater if forward scattering corrections were included.
The process latitude of IBM's current high-resolution resist systems is such that dose errors of approximately 5% of base dose can be tolerated. The cell sizes for the new programs were accordingly adjusted to give worst-case dose errors (i.e., the worst error for any shape in the patternas compared with the existing postprocessor) much smaller than this. The required cell sizes, and resulting worst-case errors, are shown as a function of β in the following Table I:
TABLE I______________________________________ Worst Errorβ (microns) Cell Size (% Base Dose)______________________________________3.0 β/6 0.66.0 β/6 0.79.0 β/6 0.912.0 β/6 1.1______________________________________
FIG. 5 shows CPU times, as a function of β, for the two programs A andB, together with the existing postprocessor The range of β values has been extended to 24 μm to simulate the effect on runtimes of shrinking the pattern to 0.25 μm feature sizes. The runtimes for the existing postprocessor at β=18 and 24 μm were obtained by extrapolation. All other values were obtained experimentally, using the cell sizes given above in the case of the programs A and B.
The main conclusions to be drawn from FIG. 5 are as follows:
1. Program B (the vector version) is about 1500 times faster than the existing postprocessor at β=24 μm (i.e., for the case of 50 keV and 0.25 μm features).
2. For this dense pattern, program B is also nearly 10 times faster than the existing postprocessor at β=3 μm. This means that the algorithm according to the invention is also attractive for use with densepatterns even at 25 keV.
3. The vectorized program B is about 2-20 times faster than the scalar program A.
4. Curve C represents the contribution of matrix convolution processing to curve B, and demonstrates that matrix convolution is generally the dominant component of the CPU time.
5. Comparing the existing postprocessor at 25 keV (e.g., β=3) with thealgorithm according to the invention at 50 keV (e.g., β=9), it can be seen that the higher voltage offers a speed-up of about a factor of 20 in backscatter correction for this dense pattern.
A second test pattern, in the form of a proximity effect test pattern with 0.25 μm minimum feature sizes, was used. The characteristics of the second test pattern are as follows:
Size: 1640 by 1640 microns
Number of Rectangles: 87023
Shape Coverage: 6.5%
Shape Density: 32.5 shapes per 1000 square microns
This pattern provides a particularly severe test of the algorithm accordingto the invention for two reasons. Firstly, the low density of shapes (comparable to that of a relatively sparse logic chip level) favors the existing shape-oriented algorithm compared with the density-oriented algorithm of the invention. Secondly, the pattern is deliberately designedto provide extreme variations in the environments of its shapes and, hence,to require dramatically different doses for different shapes.
All calculations were carried out for η=0.6 and with the interaction range cβ set to 2β. For η=0.6, the maximum possible range ofbackscatter-corrected does is from 100% to 160% of the base dose. For this pattern, the doses computed by the existing postprocessor range from 100% to 159% of base dose at β=3.0 μm and range from 104% to 160% of base dose at β=12.0 μm. These dose ranges would be considerably greater if forward scattering corrections were included. The cell sizes for the programs A and B were again adjusted to give worst-case dose errors much less than 5% of base dose. The required cell sizes, and the resulting worst-case errors, are shown as a function of β in the following Table II:
TABLE II______________________________________ Worst Errorβ (microns) Cell Size (% Base Dose)______________________________________3.0 β/8 1.26.0 β/8 1.89.0 β/10 1.612.0 β/11 1.7______________________________________
FIG. 6 shows CPU times, as a function of β, for the two programs A andB, together with the existing postprocessor. The range of β values hasbeen extended to 24 μm to simulate the effect on runtimes cf shrinking the pattern to 0.125 μm feature sizes. The runtimes for the existing postprocessor at β=18 and 24 μm were obtained by extrapolation. All other values were obtained experimentally, using the cell sizes given above in the case of programs A and B.
The main conclusions to be drawn from FIG. 6 are as follows:
1. New program B (the vector version) is about 200 times faster than the existing postprocessor at β=24 μm, about 15 times faster at β=9 μm, and runs about the same speed at β=3 μm. Thus, thealgorithm according to the invention is successful even for this very demanding case.
2. The vectorized program B is about 20 times faster than the scalar program A through the whole range of β values.
3. Comparing the existing postprocessor at 25 keV (e.g., β=3) with thealgorithm according to the invention at 50 keV (e.g., β=9), it can be seen that the higher voltage offers a speed-up of about a factor of 2.5 inbackscatter for this sparse pattern.
What has been disclosed is a new correction method for electron beam lithography suitable for high voltages and small feature sizes and/or verydense patterns (in the sense of many shapes per unit area). The new method,expressed as an algorithm, is based on Fractional Shape Density Matrices. It has the merits of running faster and faster, as electron energy increases and feature sizes decrease, and of being ideally suited to implementation on pipelined vector processing hardware.
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A Celebration Of Thanksgiving
NWACC administrators, supporters gather for holidays
Posted: December 16, 2012 at 4:41 a.m.
Becky Paneitz, president of NorthWest Arkansas Community College, and the NorthWest Arkansas Community College Foundation hosted a holiday reception Dec. 6.
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SparkFun Electronics will be closed on July 3rd, 2015 in observance of Independence Day. Any orders placed after 2:00pm MT on July 2nd will be shipped out after the weekend. Thanks!
Description: These are very small rare earth magnets - 0.125" cubed. Composed of Neodymium/Iron/Boron (NdFeB), these magnets are curiously strong and make for a great way to attach tools to a metal workbench, hold small children to a fridge, and as a trigger for reed switches. Don't let the photo fool you - these are very small magnets.
Activates the reed switch (shown below) at a distance of about 1cm.
Sold in single units.
Wait, so how big are these, really? Next to the quarter, they do indeed look to be about 0.125", but according to the ruler picture, it's over 0.25" to a side…
Scales must be wrong. They are 0.125" cube.
I just noticed that myself. The scale is wrong for some reason.
Would this magnet paired with a Hall Effect Sensor or a Insulated Reed Switch be able to work mounted to the front wheel and fork on my MC?
(I'm looking into building a wireless speedsensor).
The distance from fork to wheel is some inches. (10 cm or so)
I'm using these to trigger a Hall effect sensor. A bit more sensor sensitivity is nice on these since they pack less punch than a bulkier magnet, but they're still plenty strong if you have good sensitivity and a reasonable sensing distance.
Could you share numbers? It would be great to know what cm distance (even roughly) it takes for this magnet to trigger a Hall Effect sensor (itself rated to switch at 0.5-9.5mT or 5-95gauss).
I tested this magnet with a Hall effect sensor rated at 85G (see the test, this magnet at 1:20), and it switched at about 0.5cm.
Could i use these to trigger a Hall Effect Sensor?
No reviews yet.


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Broadway headliner and popular rising TV and film star Darren Criss offers a preview of the new season of FOX's hit musical dramedy series Glee as well as provides a useful recap of the events of the past season in a new promo for the show now available.
"At the end of Season Four, we had a little bit of a cliffhanger... a little box behind Blaine's back," Criss teases in the new promotional package, referring to the potential marriage proposal on the horizon.
And, what about Rachel (Lea Michele) and her audition for a Broadway revival of FUNNY GIRL? "As a fan of the show, I hope she gets the part! She'd be really good," Criss asserts.
Additionally, as for old friends and foes appearing on the new season: "Sue Sylvester is up to her old tricks!" Criss relates.
"Five years later, Sue continues to try to destroy the Glee club," Criss says of what we can expect from the events of the first episodes of the new year.
Additionally, Criss adds, "The Beatles is a big deal for me!" in discussing the tribute to the iconic rock band by the pop cultural TV touchstone.
GLEE Season Five premieres on September 26 at 9 PM. The complete Glee SINGS THE BEATLES soundtrack is available now.
View Darren Criss's Glee S4 "Criss-cap" and preview S5 below.
About Author
- SOUND OFF World Premiere Exclusive: Joel Grey In GEORGE M! On THE ED SULLIVAN SHOW
- SOUND OFF: Four Fabulous Features Of This Week's GLEE
- New Rehearsal Sneak Peek Of SOMETHING ROTTEN! Featuring Christian Borle
- Christian Borle & Brian D'Arcy James Talk SMASH Reunion In Rehearsal For SOMETHING ROTTEN!
- GLEE's Darren Criss & Chris Colfer Explain The Klainomenon
- SHAKESPEARE UNCOVERED: SERIES 2 DVD Out Today
- Behind The Scenes With Matthew Morrison In FINDING NEVERLAND Rehearsals
- Ultra-Glam New KINKY BOOTS Academy Awards Social Media Image
- Darren Criss Says Goodbye To GLEE With Emotional Message To Fans
- Lea Michele, Darren Criss & More In Group Photo Of Cast & Crew At GLEE Finale


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Our location guide for Zyryanka provides some basic essentials for the more adventurous visitor. A simple location map is provided but also a detailed topography map that shows the location of the nearest places where you can surf, ski or mountain climb (if they are close by). Of course some of these will be at long distances from Zyryanka and those far flung spots are provided on the 'nearest' tables. If you are traveling to other cities or towns near Zyryanka you will also find weather forecasts for those locations below.
|Other places close to Zyryanka:
|Place Name
|1–3 Day Summary
|4–6 Day Summary
|7–9 Day Summary
681 km
|Some drizzle, heaviest during Sat morning
|Light rain (total 3mm), mostly falling on Wed afternoon
|Heavy rain (total 30mm), heaviest during Sat night
1095 km
|Light rain (total 2mm), mostly falling on Sat afternoon
|Mostly dry
|Some drizzle, heaviest during Sat morning
1423 km
|Light rain (total 4mm), mostly falling on Sat morning
|Mostly dry
|Mostly dry
1459 km
|Light rain (total 2mm), mostly falling on Sat afternoon
|Moderate rain (total 17mm), heaviest on Tue night
|Mostly dry
1481 km
|Light rain (total 2mm), mostly falling on Sat afternoon
|Moderate rain (total 17mm), heaviest on Tue night
|Mostly dry
Outdoor Activities near Zyryanka
If you are in Zyryanka and would like to go mountain climbing, hiking, skiing or surfing, click below for detailed forecasts.
Ski Resorts close to Zyryanka:
|Closest ski resort1
|Kamchatka (Russia)
|1189 km SSE
|Second closest ski resort2
|Klyuchevskaya (Russia (Russian Federation))
|1195 km SSE
|Third closest ski resort3
|Korjakskij (Russia (Russian Federation))
|1449 km SSE
|Fourth closest ski resort4
|Moroznaja sopka (Russia (Russian Federation))
|1456 km SSE
|Fifth closest ski resort5
|Wakkanaishi Koen (Japan)
|2329 km S
Mountains close to Zyryanka:
|Closest mountain peak1
|Gora Pobeda (Russia)
|231 km SW
|Second closest mountain peak2
|Mus-Khaya Mountain (Russia)
|596 km SW
|Third closest mountain peak3
|Orlinaya (Russia)
|619 km ESE
|Fourth closest mountain peak4
|Anjuisky (Russia)
|655 km ENE
|Fifth closest mountain peak5
|Voyampolsky (Russia)
|964 km SE
The above topographic map of Zyryanka and the surrounding area has been derived from satellite mapping. The topographic data has been illuminated by a light source corresponding to the position of the sun at mid afternoon in summer. Major roads, railways rivers and other water features are derived from global GIS data.


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AgustaWestland is continuing to push its family concept for civil rotorcraft with a static display at Paris featuring two of its in-development helicopters, the AW169 and its bigger brother, the AW189.
The AW189 on display is a flight-test prototype painted in the livery of Bristow Group, which is due to take delivery of its first of six offshore transport-configured aircraft later this year.
So far, the 8t type has accumulated around 1,500h across the four aircraft test fleet and will be certificated "in the next two to three months", says the Anglo-Italian airframer. EASA approval for the latest variant of the GE CT7 that powers the AW189 is imminent, it adds.
Meanwhile, the 4t AW169, represented at Paris with a flight-test example, has accumulated over 300h ahead of certification next year. AgustaWestland has around 80 commitments for the type, it says.
Two operators, Bond Offshore Helicopters and Weststar Aviation Services, have orders in place for the entire rotorcraft family, which also includes the medium twin AW139, says AgustaWestland.
Additional orders for all three types are anticipated this week, it adds.
Check out the latest news and views from this year's Paris air show, including:
Aircraft | Aerospace | Aviation | Military | Business aviation | MRO | General aviation | Space | Airports | Engines and propulsion | Flight tests | Accidents and incidents | Flightglobal blogs | E-newsletters |
Flightglobal dashboard | ACAS | MiliCAS | Ascend Fleets | Flightglobal Insight | ICAO | CapStats | Airport charges | Ascend Values | Aviation Exchange | Aircraft Ratings | Helicopter Fleets | Market Commentaries | FlightMaps Analytics | Industry resources
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StartUpHire is the place to find PRODUCT MARKETING MANAGER jobs. Review the list of PRODUCT MARKETING MANAGER career opportunities to the left. These PRODUCT MARKETING MANAGER jobs represent some of the most rewarding careers available.
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Originally written on Around the Arc | Last updated 5/10/13
Posted on Pattison Ave. this morning: "The team formerly known as the New Orleans Hornets is comprised of a young, athletic, up-and-coming core. Anthony Davis, Xavier Henry, Eric Gordon, and Austin Rivers highlight a nucleus looking to put New Orleans basketball back on the map. With both eyes clearly focused on the future, the franchise felt that they should use the youth movement to launch a complete re-branding campaign, with a new name and all.The idea wasn't awful; fan bases can often be re-energized by a new franchise identity, especially if it is meant to represent the entering of a new era. Plus, the city wanted something that was more representative of itself, since New Orleans is not especially known for Hornets, having inherited the name from Charlotte. It all made sense. The organization had the opportunity to come up with an exciting new nickname that encompassed the spirit and energy of the young squad, while serving to intimidate opponents, at least a little. New Orl...
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Ares Multi-Strategy Credit Fund, Inc. (ARMF) Ex-Dividend Date Scheduled for January 21, 2014
Ares Multi-Strategy Credit Fund, Inc. ( ARMF ) will begin trading ex-dividend on January 21, 2014. A cash dividend payment of $0.1525 per share is scheduled to be paid on January 31, 2014. Shareholders who purchased ARMF stock prior to the ex-dividend date are eligible for the cash dividend payment. This marks the 3rd quarter that ARMF has paid the same dividend. At the current stock price of $22, the dividend yield is 8.32%.
The previous trading day's last sale of ARMF was $22, representing a -10.75% decrease from the 52 week high of $24.65 and a 8.86% increase over the 52 week low of $20.21.
For more information on the declaration, record and payment dates, visit the ARMF Dividend History page. Our Dividend Calendar has the full list of stocks that have an ex-dividend today.


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Kitchen style and kitchen layout are two things you must consider when you make the decision to do a kitchen remodeling project. A galley style kitchen is a very popular design. And here's why. A galley style kitchen is ideal for smaller spaces. For example, you will often find a galley style kitchen in smaller houses and apartments because the kitchen must be long and narrow to make use of the space available. A galley style kitchen makes use of all the floor space so none of it is wasted or underutilized.
However, if you are remodeling your long, narrow kitchen, you can do a galley kitchen remodel and eliminate the cramped, out of space feeling when using your current kitchen. A galley kitchen remodel will help you make the most efficient use of space. Here are some tips on how to begin!
Many times, a galley style kitchen does not have access to as much natural light. Because of this, you will need to use artificial lighting that will provide well for the space. Consider these lighting options if you do not have a window. Sunken lighting placed in the ceiling will not take up space and it can even be pointed toward different directions. For a more stylish look, there are many decorative light fixtures made just for smaller galley style kitchens. And these lighting options will not take up much space.
When choosing kitchen cabinets, wall coverings, and kitchen flooring for a galley style kitchen, be sure to choose light colors. This will improve the success of your galley kitchen remodel by making the space feel larger as a result of the lighter colors. This would include lighter wood cabinets, light or white colors on the walls, and a light wood or tile floor. You will be surprised at just how much bigger a small kitchen will look when light colors are incorporated as part of the design style.
There are three important items in the kitchen and they are often referred to as the "kitchen work triangle". These three items include the oven, sink and refrigerator. For maximum efficiency, design the kitchen work triangle in a manner where all three items are all within reach with just a step or two. This is especially important if you prepare meals on a regular basis. The kitchen work triangle is a great way to save time and effort. And it adds wonderfully to the functionality of your galley style kitchen.
With some thoughtful planning, you can accomplish a galley kitchen remodel that is functional and designer stylish!
How can we help?
"I choose Kitchen Solvers to retrofit my existing kitchen cabinets with new doors as well as the installation of four new cabinets and a breakfast nook. I am very pleased with the results; particularly with the curved walnut cupboard doors you matched to my original kitchen when other said they couldn't do it. I am particularly impressed with the workmanship of your carpenter and how flexible you remained. You truly are the Kitchen Solver! "
Darlene MRead more


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Pennsylvania Governor signs immunization bill
Gov. Tom Wolf signed into law on Friday House Bill 182, which allows pharmacists to administer the flu vaccine to patients 9 years of age and older, with parental consent.
Gov. Tom Wolf signed into law on Friday House Bill 182, which allows pharmacists to administer the flu vaccine to patients 9 years of age and older, with parental consent.
The Food and Drug Administration is concerned that too great a deviance from a reference drug appearance could affect compliance.
For 12 years, the Council for Responsible Nutrition has been educating members of Congress on the value and benefit of a regulated supplement industry.
Federal regulations governing unmanned aircraft systems, or drones, will be in place by this time next year. Most retailers won't be ready, but Amazon says it will be as soon as the feds are.
The FDA announced on Tuesday that it determined that partially hydrogenated oils, the primary dietary source of artificial trans fat in processed foods, are not generally recognized as safe for use in human food.
Sens. Richard Blumenthal, D-Conn., and Sen. Dick Durbin, D-Ill., proposed three amendments to the National Defense Authorization Act that would impact how the military addresses supplementation.
"As it stands now, TPP will make it harder for the U.S. generic industry to sell its products overseas," GPhA's Ralp Neas reported.
The Patient Access to Pharmacists' Care Coalition, a group of more than 25 organizations representing patients, has released newspaper and radio advertisements calling for passage of the Pharmacy and Medically Underserved Areas Enhancement Act.
In light of the re-emergence of vaccine-preventable diseases in the United States, the American Medical Association is seeking more stringent state immunization requirements to allow exemptions only for medical reasons.
The Food and Drug Administration hopes to boost the effectiveness of the influenza vaccine for this coming season, the Centers for Disease Control and Prevention reported.


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hire a professional motivator? that probably takes some motivation though. i think motivation has to come from inside. its a hard one to help someone with, sorry.
thats about the size of it. once you get started its easier. good luck
In the service, you get up at 6 a.m. even if you just got in at at 4 a.m. The old "just do it" I suppose. When I wrote my novel I would whine (to myself) about writer's block and definitely felt a lack of motivation but, tenaciously I wrote everyday until it was done. Same thing now with my weight loss and exercise program.
Usually wait until it's unavoidable
Ah, there's some people that can do fine with that but others cannot. I suppose, for me, it's a blessing and a curse. I could do much better but I can't get motivated so it's always last minute crunch.
I think about the consequences if I don't motivate myself to get the task done.
find a fat ugly guy or girl and then say if u slack off they get naked...
Unfortunately I don't but sometimes thats for the best.
Yes this can be a problem too sometimes. I guess that might be why it"s for the best huh? lol at your comment :)
Hey if you can't make fun of yourself, who can you make fun of.
Very well said. I'm managing to have a good time so far today and hope that you are as well. Nice chatting with you :)
OK I've come up with your perfect motivator for getting started on your paper. It's a bit risque but I think it will work.
If you don't get started on that paper I'm afraid I'll just have to turn around.
I warned you. I guess I was wrong this time.
Sorry about that. I know thats really not your thing but but I have been feeling a little playful today. I hope that I didn't offend you to much.
Brave... Dumb...tomato tamato. Like I said before just feeling playful. Had to change back though to a little less offensive to most.
No pic for that in my profile so I guess that remains unanswered for the time being. If I ever come up with something, I promise to let you know. :)
btw, I knew you were familar so I did a little digging. I let you know in a minute where.
I have experienced that with school work. I force myself to begin the task and after a short time I find I am actually involved in what I should have started an hour earlier.
Start a document. Begin composing this paper. Don't worry about orginization, grammar, spelling etc. Just let things fly. This may get those creative juices flowing within you.
It was something I saw in a writer's guide as a way to break writer's block. My literature professore suggested the same as a way of finding your voice. There will probably be something usable in your "ramblings". That is what I intend to do with the paper I have ahead of me. Good luck.
caffeine and a kick to the jimmy
more caffeine and watch an mma fight, or the view... they tend to get the adrenal glands pumping.
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She is also known as Shubhamkari
|Tamil script
|Avatar of Adi Parashakti/Durga
|Thorn like weapon and dagger
Maa Kala Ratri is the seventh form amongst the Navadurga or the nine forms of the Hindu goddess Parvati or (Shakti). She is worshipped during the nine nights of Navratri celebrations.[1] . The seventh day of Navratri pooja (ritual) is dedicated to Durga Kalaratri and she is considered the most violent form[2] of Goddess Durga. Kalaratri is the one of the fiercest forms of Durga and her appearance itself evokes fear.
This form of Goddess is believed to be the destroyer of all demon entities, ghosts, spirits and negative energies, who flee upon knowing of her arrival.[3]
Kaal Ratri means the One who is "the Death of Kaal". Here Kaal is dedicated as time & death and ratri means night. Kaal Ratri is the one who destroys ignorance and removes darkness. This form primarily depicts that life also has a dark side – the violence of Mother Nature, creating havoc and removing all dirt. She is also known as Shubhamkari or "good-doing".
Once, there was a demon named Raktabeej, who has obtained a boon from Lord Brahma that every drop of his blood will fall on the ground and another clone of his would be born. After getting the boon, he started to torment the innocent humans and Gods. To kill him, they all went to Goddess Parvati to the Kailash Mountains and told her the story of the demon Raktabeej. She promised them that she will stop him. When Raktabeej was egoistic about his power, Parvati watched from below from the skies, he said to himself that no one can kill him, Parvati was furious, she disappeared and her voice echoed to Raktabeej, he did not know where it was coming from, and soon enough, it was. Parvati transformed her appearance when invisible, now her new appearance became ferocious, she wore a girdle of severed human hands, a garland of human skull heads representing the fifty letters of the Sanskrit alphabet or a garland or flowers, for her clothing, she wears tiger skin like Lord Shiva. She has three eyes that symbolizes past, present and future and sometimes, when she gets too furious, her eyes looked bright red. She has two dead heads for her earrings and a black complexion, she rode on a donkey, she has four hands holding a trident, sword, scimitar and vajra. Raktabeej was scared of Parvati's new form, she was none other than Goddess Kaalratri. A long battle ensued, and at the end, she stabbed and decapitated him with her weapons and she drank all his blood.
The complexion of Maa Kalaratri is like dark night with bountiful hair and heavenly shaped form, and, she has four hands. The left two hands holds a cleaver and a torch, and the right two are in the mudras of "giving" and "protecting". She wears a necklace that shines like the moon. Kalaratri has three eyes which emanate rays like lightning. Flames appear through her nostrils when she inhales or exhales.[4] Her mount is the donkey, often considered as a donkey's corpse. Blue, red and white colors should be used to wear on this day.
The appearance of Maa Kalaratri can be seen as being very dangerous for evil-doers. But she always bears good fruits for her devotees who are not afraid of her and all should avoid fear when faced with her, for she removes the darkness of worry from life of her bhaktas or worshipers. Her worship on 7th day of Navratri has very much a high importance to Yogis and Sādhakas. Yogis & Sādhaka penance on Shahtra Chakra on this day. For the worshipers on this day door opens of every siddhi, power and practice in the universe.
- Kalratri -Varanasi Temple, D.8/17, Kalika Galli, which is a lane parallel to Annapurna – Vishwanath
- ^ The Seventh form of Durga
- ^ "Maa Kaal Ratri". jai-maa-durge.blogspot.com. Retrieved 19 December 2012.
- ^ Saraswati, Yogi Ananda. "Kalaratri". vedicgoddess.weebly.com. Retrieved 19 December 2012.
- ^ Rampuri, Baba. "Navdurga – the nine forms of Durga". rampuri.com. Retrieved 19 December 2012.


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so here i am with "maybe another stupid question" so here i want to ask how to redirect to previous page if the case is somehow like this: i have view:
a. home_view b. about_view c. contact_view
then i have login view that (now currently after i login it'll redirect me into the home_view)
I want if i access login_view from about_view then the redirect function will redirect me to about_view, or if i access login_view from contact_view then the redirect function will redirect me to contact_view and so on. How to make redirect function to the previous page(not a single page) ? Maybe some tricks using php? or codeigniter itself?


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User Tip: If you're unsure of your vehicle type, you may skip the machine type selection box.
Please select make, model and yearShock Linkage Bearings
Are you rebuilding your ATV's shock linkage? Starting a rebuild of anything is always an exciting project. Whether it's your first time or your twenty-first, you're sure to feel a great sense of accomplishment, and you'll enhance your mechanical skills. With the shock linkage in particular, you'll need all sorts of items:
We've got what you need at Rocky Mountain ATV/MC. You can piece out each individual component using our OEM page, or you can make it easy and pick up an aftermarket linkage bearing kit. Each one includes many of the pieces you need for the link arm.
We have several ATV shock linkage bearing kits available. The brands we carry include All Balls, Pivot Works and Bearing Connections. Each one is a little different in what it includes, so make sure you read the product description. You can also check out past customer reviews to get a feel for how it worked out for others.
Treat yourself (and you quad) right and get a full shock linkage bearing kit. It will make your rebuild a little bit easier and reduce your stress level. (And everyone knows that rebuilds include that one moment where stress is a little high.)
DAVID in PA
Good qualityRead All Reviews
ROBERT in FL
Apparently pivot works is lacking in quality control. The kit came with one of the bearings missing a needle. Straight out of the packaging, not lost or fell out, just missing. I used all balls before, they weren't great but at least the bearings weren't missing any needles. I will skip the aftermarket for bearings from now on and pay a little more for oem.Read All Reviews
Dave in GA
Complete Kit and works great.Read All Reviews
Doug in WA
Perfect fit and priced at or below the after market suppliers offerings, good stuffRead All Reviews


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Michael Goforth: Downtown Farmers Market as much festival as shopping experience
Stop and smell the roses.
And the pastel orchids.
And all the other fresh flowers in a rainbow of bright colors like a transplanted garden in paradise.
Or smell the freshly baked breads and pastries, a nostalgic and hunger-inducing reminder of grandmother's kitchen on a chilly morning.
Smell the aromas of delicate green herbs. And fresh vegetables grown just a short distance away.
Savor the scents of handmade soaps and candles as they tantalize the senses.
They are there every Saturday morning along the Indian River Lagoon waterfront in downtown Fort Pierce.
Taste the exotic coffees and teas. Dig into delectable omelets and crepes, made as you watch. Sip on a cool smoothie made with fresh strawberries and bananas. Chow down on sweet and tangy barbecue.
Fifteen years ago, the Downtown Farmers Market was just an idea for bringing local produce to the heart of the city. Only about 10 vendors signed up. Today, more than 50 vendors set up 8 a.m. to noon around tables under tents and in kiosks, sharing their wares with hundreds to thousands of visitors who have made the market, as its slogan says, "a Saturday morning tradition."
The vendors come from all over the Treasure Coast. And so do the customers. Many customers also come from states throughout the nation during their visit to the region, especially during these winter months when such an activity would be inconceivable in other climates.
Last weekend, the Farmers Market celebrated its 15th year.
Parking for that celebration, as it is on most Saturdays, was at a premium. Even the free parking garage next to City Hall, which is normally just about empty, was filled almost to capacity.
As I walked the few blocks from the garage to the market, I thought of how much the downtown has changed since the market began. I've been here long enough to remember when the downtown was dead on Saturday mornings as it was during much of the week. The area was in serious decline with vacant buildings and few activities. Main Street Fort Pierce began the revitalization efforts that have transformed the downtown into one of the most vibrant locations on the Treasure Coast.
The Farmers Market, Friday Fest, the Sunrise Theatre and its Black Box Theatre have helped to rejuvenate the downtown, along with successful boutiques and a wealth and variety of restaurants.
The Farmers Market Saturday morning was filled with people, shoulder to shoulder and elbow to elbow. More than a shopping experience, there was a festival atmosphere among the outdoor sculptures, the towering palms and the fountain at Marina Square.
Hundreds of people also gathered just to the west for the Fort Pierce Jazz and Blues Society arts and crafts market that operates each Saturday alongside the Farmers Market.
Music drifts upon the gentle sea breeze as live entertainment is offered up during Farmers Market with favorite local bands such as the Critters and Moonshadow.
Smiles abound. This is a special place.
But a dark cloud for the Farmers Market appeared a few months ago as Fort Pierce officials said that in conjunction with an upcoming project to build a protective barrier and to rebuild the city-owned marina, the Farmers Market and the arts and crafts market would have to move westward, away from the waterfront, to a paved parking lot.
Last week, I spoke with Ed Seissiger, engineering project manager for the city. He told me the contract for the project had just been signed and work may begin in the next 35 to 40 days and take about 20 months to complete. Some of the staging will be at the parking lot of the Backus Museum and Manatee Observation and Education Center. If the Farmers Market must move, he said, that relocation may be only for four to six weeks and occur as late as next year.
Mayor Bob Benton told me, "All of this is part of the puzzle of making the downtown successful. Hopefully, everybody will bear with us and, in a few weeks, we'll be back on the waterfront we all love."
Yes, let's hope the market move is very short.
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Overall, others give this:
Flemington, NJ
via sears.com
I grow many varieties of organic berries and was looking for a way to store and extend the shelf life of my berries. This does the job but it's very small. It's only large enough for a small amount of berries and my extra large strawberries barely fit. I recommend this if you're only storing a small amount of berries but if you're like me and have a lot this berry keeper is not for you.
Syracuse, NY
Dixon, IL
I was very happy to see this product included in the Sandra lee line at Kmart! I can't tell you how many times I have had berries go bad because of improper storage! With the Sandra Lee berry keeper, I no longer have to worry about that! I love that this doubles as a colander. It is very easy to use because of the printed on directions! I love throwing this in the picnic basket! It is a very nice quality of acrylic material. This is just another product in the Sandra Lee line that I Love! The price is right and the quality and design is great! With summer getting closer, this product is a must have!


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Vonn ready to make '10 Olympic debut in downhill
WHISTLER, British Columbia It's finally time for Lindsey Vonn's Olympics to begin.
After so much speculation about her badly bruised right shin, detailed discussion of treatment with painkillers and Austrian curd cheese - yes, cheese - and delay upon delay because of bad weather, Vonn will make her Vancouver Games debut in Wednesday's downhill.
"I'm definitely getting antsy," she said.
As a two-time reigning overall World Cup champion entered in all five Alpine events, Vonn is pegged as a contender to win multiple medals, and is the favorite for gold in the downhill.
It's her best event, and she has won five of six World Cup downhills this season.
"She certainly feels that she has a chance to win the downhill," her husband, Thomas, said in a telephone interview with The Associated Press. "She feels like, although it's going to be extremely painful in the run, that she can still fight through it and put down some of her best skiing."
Vonn was drawn Tuesday night to race 16th, generally considered the ideal starting spot for the speed events, because she'll get to ski before her chief rivals. Among them are Vonn's best friend, Germany's Maria Riesch, the only other woman to win a downhill this season; Sweden's Anja Paerson, owner of five Olympic medals; and Canada's Emily Brydon, who knows this hill well.
Other challengers could include Vonn's U.S. teammate Julia Mancuso, the 2006 Olympic giant slalom champion; Switzerland's Nadia Styger, who beat Vonn by a hundredth of a second on this course two years ago; and Canada's Britt Janyk, who grew up in Whistler.
"Lindsey is the fastest skier out there," said Patrick Riml, Canada's head women's Alpine coach, "and the goal is to beat her."
Riml is rather familiar with Vonn's skill and determination, because he used to coach the U.S. women's team. He and Vonn's opponents expect nothing less than her best Wednesday, no matter the state of the sports world's most famous shin.
"She's skiing," Paerson said, "and that makes me know that she's in good shape."
Vonn did stay off the slopes completely Tuesday to rest her leg, which her husband said had a bit of a setback and was "throbbing" a day after she was the fastest woman in the first part of Monday's split training session.
"It was definitely sore today, much more sore than it had been in a couple days," he said. "The full-length downhill run yesterday definitely took its toll."
That's why Vonn probably wouldn't have taken part in the downhill training run that was scheduled for Tuesday but was called off because of an overnight snowstorm.
Still, there was good news. Even though she was bothered by the shin, Monday's practice proved that "she knows her leg will hold up at those speeds, and that she can be fast even if it's painful," said Thomas Vonn, who serves as a coach and adviser to his wife.
"I was able to ski the way I wanted to," Lindsey Vonn said. "It was really painful, but I made it down, and I guess that was a real positive step."


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|The writer is an old friend of mine, and this is her first collection.
There's an extensive preview of the book at the link, too.
I wrote a quick blurb for the book, as close to the nature of the content as I could get in one line:
As fine a collection of short fictions as you'll see today.
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