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Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
1. A method for depositing silicon oxide on a substrate disposed in a process chamber, the method comprising
flowing a process gas comprising H2, a silicon source, and an oxidizing gas reactant comprising hydrogen peroxide or H2O into the process chamber;
forming a plasma having an ion density of at least 1011 ions/cm3 from the process gas; and
depositing the silicon oxide within a gap in the substrate having an aspect ratio of at least 4:1 with the plasma using a process that has simultaneous deposition and sputtering components,
wherein the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
2. The method recited in
3. The method recited in
4. The method recited in
5. The method recited in
6. The method recited in
7. The method recited in
8. The method recited in
9. The method recited in
etching the silicon oxide within the gap; and
thereafter, depositing a remainder of the silicon oxide within the gap.
10. The method recited in
11. The method recited in
One of the persistent challenges faced in the development of semiconductor technology is the desire to increase the density of circuit elements and interconnections on substrates without introducing spurious interactions between them. Unwanted interactions are typically prevented by providing gaps or trenches that are filled with electrically insulative material to isolate the elements both physically and electrically. As circuit densities increase, however, the widths of these gaps decrease, increasing their aspect ratios and making it progressively more difficult to fill the gaps without leaving voids. The formation of voids when the gap is not filled completely is undesirable because they may adversely affect operation of the completed device, such as by trapping impurities within the insulative material.
Common techniques that are used in such gapfill applications are chemical-vapor deposition ("CVD") techniques. Conventional thermal CVD processes supply reactive gases to the substrate surface where heat-induced chemical reactions take place to produce a desired film. Plasma-enhanced CVD ("PECVD") techniques promote excitation and/or dissociation of the reactant gases by the application of radio-frequency ("RF") energy to a reaction zone near the substrate surface, thereby creating a plasma. The high reactivity of the species in the plasma reduces the energy required for a chemical reaction to take place, and thus lowers the temperature required for such CVD processes when compared with conventional thermal CVD processes. These advantages may be further exploited by high-density-plasma ("HDP") CVD techniques, in which a dense plasma is formed at low vacuum pressures so that the plasma species are even more reactive. While each of these techniques falls broadly under the umbrella of "CVD techniques," each of them has characteristic properties that make them more or less suitable for certain specific applications.
HDP-CVD systems form a plasma that is at least approximately two orders of magnitude greater than the density of a standard, capacitively coupled plasma CVD system. Examples of HDP-CVD systems include inductively coupled plasma systems and electron cyclotron resonance (ECR) plasma systems, among others. HDP-CVD systems generally operate at lower pressure ranges than low-density plasma systems. The low chamber pressure employed in HDP-CVD systems provides active species having a long mean-free-path and reduced angular distribution. These factors, in combination with the plasma density, contribute to a significant number of constituents from the plasma reaching even the deepest portions of closely spaced gaps, providing a film with improved gapfill capabilities compared with films deposited in a low-density plasma CVD system.
Another factor that allows films deposited by HDP-CVD techniques to have improved gapfill characteristics is the promotion of sputtering by the high density of the plasma, simultaneous with film deposition. The sputtering component of HDP deposition processes slows deposition on certain features, such as the corners of raised surfaces, thereby contributing to the increased gapfill ability of HDP deposited films. Some HDP-CVD systems introduce argon or a similar heavy inert gas to further promote the sputtering effect. These HDP-CVD systems typically employ an electrode within the substrate support pedestal that enables the creation of an electric field to bias the plasma towards the substrate. The electric field can be applied throughout the HDP deposition process for further promotion of sputtering and to provide better gapfill characteristics for a given film.
It was initially thought that because of their simultaneous deposition/sputter nature, HDP-CVD processes could fill the gaps or trenches that were created in almost any application. Semiconductor manufacturers have discovered, however, that there is a practical limit to the aspect ratio of gaps that HDP-CVD processes are able to fill. For example, one HDP-CVD process commonly used to deposit a silicon oxide gapfill film forms a plasma from a process gas that includes silane SiH4, molecular oxygen O2, and argon Ar. It has been reported that when such a process is used to fill certain narrow-width high-aspect-ratio gaps, the sputtering caused by argon in the process gas may hamper the gapfill efforts. Specifically, it has been reported that material sputtered by argon in the process redeposits on the upper portions of the sidewalls of the gaps being filled at a rate faster than at the lower portions. This, in turn, may result in the formation of a void in the gap if the upper areas of regrowth join before the gap is completely filled.
A variety of techniques have been developed to extend the gapfill capabilities of silicon oxide HDP-CVD processes. Two specific examples include U.S. Pat. No. 5,872,058 ("the '058 patent") and U.S. Pat. No. 6,395,150 ("the '150 patent). The '058 patent discloses that the gapfill capabilities of a silicon oxide film may be extended by reducing the amount of argon or other inert components in the HDP process. This is intended to reduce the amount of sputter and thereby reduce the rate of redeposition. The '150 patent discloses that if argon, which is a diluent gas in addition to a sputtering agent, is eliminated from the process gas as suggested in the '058 patent, deposition rate uniformity may suffer. The '150 patent then teaches that this problem may be overcome by substituting a flow of argon with a flow of helium.
Embodiments of the invention thus provide a method for depositing silicon within a gap on a substrate that produces improved redeposition characteristics. The inventors have identified that in addition to Ar, a further significant source of redeposition is the presence of molecular-oxygen ions in the plasma of a SiH4+O2 HDP-CVD process, even while they provide the source of oxidation as an oxidizing gas reactant. Accordingly, the effect of such molecular-oxygen ions is reduced in embodiments of the invention by maintaining certain ionic-species distributions in the plasma. In particular, the plasma is constrained by the process conditions to have a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
In a specific set of embodiments, silicon oxide is deposited on a substrate in a process chamber. The silicon oxide is formed by flowing a process gas into the process chamber and forming a high-density plasma, i.e. a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into a gap having an aspect ratio of at least 4:1 is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
There are various specific characteristics of the plasma in specific embodiments, which may be achieved in part by the use of specific oxidizing gas reactants. In some embodiments, the ions having a single oxygen atom comprise hydroxyl radicals. In other embodiments, they may comprise atomic-oxygen atoms. The oxidizing gas reactants may include, for example, O3, H2O2, H2O, N2O, and NO, among others. In one specific embodiment, the oxidizing gas reactant comprises remotely generated atomic oxygen.
The flow of H2 acts to reduce the sputtering of molecular-oxygen ions further by reducing the partial pressure of O2 +. In some instances, this light fluent gas may be the dominant part of a premixture that includes another heavier inert gas in a small concentration, such as He or another inert gas. The relative flows of the H2 and heavier inert gas may vary over time. In one embodiment, H2 is flowed with a rate of at least 300 sccm.
For particularly aggressive gapfill applications, the deposition with a plasma having these ionic species characteristics may form part of a dep/etch/dep process. Such a dep/etch/dep process includes at least two deposition steps separated by an etching step, and may include multiple such cyclings. Depending on the particular application, the deposition step that has the greater density of single-oxygen-atom ions may be the initial deposition, the final deposition, or some other intermediate deposition. In a particular embodiment, every deposition step of the dep/etch/dep process has a greater density of single-oxygen-atom ions than of ions having more than one oxygen atom.
The methods of the present invention may be embodied in a computer-readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system. Such a system may include a process chamber, a substrate holder, a pressure-control system, and a gas-delivery system. The computer-readable program includes instructions for operating the substrate processing system to deposit a film in accordance with the embodiments of the present invention.
A further understanding of the nature and advantages of the present invention may be realized by reference to the remaining portions of the specification and the drawings.
Embodiments of the invention are directed to a method of depositing a silicon oxide layer to fill a gap in a surface of a substrate using a high-density-plasma CVD process. Silicon oxide films deposited according to the techniques of the invention have excellent gapfill capabilities and are able to fill high-aspect-ratio gaps encountered in, for example, shallow-trench-isolation ("STI") structures. Films deposited by the method of the invention are suitable for use in the fabrication of a variety of integrated circuits, and are particularly useful in the fabrication of integrated circuits having minimum feature sizes of 0.10 μm or less.
As used herein, a high-density-plasma process is a plasma CVD process that includes simultaneous deposition and sputtering components and that employs a plasma having an ion density on the order of 1011 ions/cm3 or greater. The relative levels of the combined deposition and sputtering characteristics of the high-density plasma may depend on such factors as the flow rates used to provide the gaseous mixture, the source power levels applied to maintain the plasma, the bias power applied to the substrate, and the like. The combination of such factors may conveniently be quantified with a "deposition/sputter ratio," sometimes denoted D/S to characterize the process:
Other equivalent measures may be used to quantify the relative deposition and sputtering contributions of the HDP process, as is known to those of skill in the art. A common alternative ratio is the "etching/deposition ratio,"
The desired D/S ratios for a given step in the HDP-CVD processes are generally achieved by including flows of precursor gases and, in some instances, flows of a fluent gas, which may also act as a sputtering agent. The elements comprised by the precursor gases react to form the film with the desired composition. For example, to deposit a silicon oxide film, the precursor gases may include a silicon-containing gas, such as silane SiH4, and an oxidizing gas reactant. Dopants may be added to the film by including a precursor gas with the desired dopant, such as by including a flow of SiF4 to fluorinate the film, including a flow of PH3 to phosphorate the film, including a flow of B2H6 to boronate the film, including a flow of N2 to nitrogenate the film, and the like. The fluent gas may be provided with a flow of H2 or with a flow of an inert gas, including a flow of He, or even a flow a heavier inert gas, such as Ne, Ar, or Xe. The level of sputtering provided by the different fluent gases is inversely related to their atomic mass (or molecular mass in the case of H2), with H2 producing even less sputtering than He. In some embodiments of the invention discussed in greater detail below, the sputtering agent is provided with a premixture of at least two of these gases.
The inventors have discovered that while the reduction in redeposition that may be achieved by using He or H2 as a fluent gas is significant, there remains a substantial redeposition component in processes that use O2 as an oxidizing gas reactant. While the deposition chemistry is relatively complex, O2 has sufficient binding strength that the oxygen components of the high-density plasma are dominated by O2 + ions. These ions have a relatively large atomic mass and therefore continue to provide substantial sputtering that is manifested by redeposition and cusping. Accordingly, embodiments of the invention provide HDP-CVD process conditions in which the O2 + component of the high-density plasma is instead dominated by RO+ ions, usually O+ or OH+ ions. The RO+ ions have about half the molecular mass of O2 + ions when R=1 or H, and therefore provide less sputtering. Reference to plasmas having a greater density of RO+ ions than O2 + ions is intended to include the circumstance where the plasma has no O2 + ions, but has a nonzero density of RO+ ions.
In order to better understand the invention, reference is made to
As shown in
The relative dominance of RO+ ions over molecular-oxygen ions may be achieved in different ways in different embodiments. In some embodiments, it is achieved by flowing an oxidizing gas reactant that dissociates more predominantly into RO+ components. Suitable oxidizing gas reactants include ozone O3, hydrogen peroxide H2O2, and steam H2O. The greater production of O+ ions may be understood from a comparison of the relevant ionization and dissociation energies of O2 with other oxidizing gas reactants:
In other embodiments, dominance of the plasma by O+ (R=1) ions is ensured by supplying atomic oxygen directly. This atomic oxygen is produced in a remote plasma system ("RPS") or in a downstream plasma reactor, and introduced in the HDP process to reduce sputtering. In one embodiment, atomic oxygen is generated in the RPS plasma at a higher pressure than is used in the HDP process chamber, and it is subsequently flowed to the HDP process chamber with the silicon source to deposit the silicon oxide film. With the dominance of atomic oxygen in the plasma provided in this alternative fashion, the sputtering is also reduced in comparison with the use of O2 as an oxidizing gas reactant.
The RO+-dominated plasma is used to deposit silicon oxide in the gap at block 220. In some embodiments, the D/S ratio of the process is set to be between 4 and 20, which in combination with the dominance by RO+ ions, helps to ensure that a substantially bottom-up gapfill process is used without clipping corners of the features. The bottom-up gapfill is illustrated schematically with the sequence of structures 308, 312, and 316 in
In some such embodiments, illustrated with the flow diagram in
The use of molecular hydrogen H2 as a fluent gas is described in copending, commonly assigned U.S. Pat. No. 6,808,748, entitied "HYDROGEN ASSISTED HDP-CVD DEPOSITION PROCESS FOR AGGRESSIVE GAP-FILL TECHNOLOGY," filed Jan. 23, 2003 by Bikram Kapoor et al., the entire disclosure of which is herein incorporated by reference for all purposes. In copending, commonly assigned U.S. Pat. No.6,812,153, entitled "METHOD FOR HIGH ASPECT RATIO HDP CVD GAPFILL," filed Apr. 30, 2002 by Zhong Qiang Hua et al., the entire disclosure of which is herein incorporated by reference, the improvements in gapfill that may be achieved through a reduction in O2 + partial pressure were described, but were limited to situations in which the oxidizing gas reactant and applicable reaction pathways resulted in a dominance of O2 + ions in the plasma. Furthermore, that application was directed towards the use of He as a fluent gas. The inventors have now made the unexpected discovery that the effects of reducing the ionic concentration of O2 + ions and the effects of reducing the partial pressure of O2 + ions through use of fluent gas comprising H2 combine synergistically to permit filling of very aggressive gaps. In one embodiment, H2 is provided as a fluent gas at a rate of 300 sccm or greater.
In some instances, it is beneficial for the fluent gas to comprise a mixture that includes H2 with a heavier inert gas. For example, in some embodiments, the fluent gas may comprise a premixture of H2 with He or Ar. Inclusion of the heavier inert gas provides better deposition uniformity than the use of H2 alone and may permit a significant cost saving because of the relatively high cost of H2 sources compared with sources of other inert gases. These benefits are realized even where the amount of H2 used in the premixture is significantly greater than the amount of the other inert gas. For example, in one embodiment, the premixture comprises greater than 95 wt. % H2 and in another embodiment comprises greater than 99 wt. % H2.
In other embodiments, aggressive gaps may be filled by integrating the RO+-dominant process within a deposition/etch/deposition process ("dep/etch/dep") process. Such dep/etch/dep processes rely on a sequence of steps in which some material is initially deposited in the gap, with the deposition stopping before redeposition causes the breadloafing of material to form a void. This is followed by an etching step, in which the partially filled gap is reshaped, opening it so that more material can be deposited before it closes up and leaves an interior void. The reopened gap is then filled using a subsequent deposition step. Such cycling of deposition and etching steps was traditionally view by those of skill in the art as inutile the context of HDP-CVD processes because of its simultaneous deposition and sputtering components. Despite this view, it was demonstrated in U.S. Pat. No. 6,194,038, filed Mar. 20, 1998 by Kent Rossman that gapfill could be improved by using a dep/etch/dep process under certain HDP-CVD process conditions. The inventors have discovered that even more aggressive gaps may be filled by integrating the RO+-dominant HDP-CVD process into such an HDP-CVD dep/etch/dep process.
This integration is illustrated with the flow diagrams of
The process illustrated in
The gapfill characteristics may be further enhanced by using a light fluent gas such as H2 during the RO+-dominant deposition step to reduce the partial pressure of O2 + as described above. The fluent gas may be provided by a premixture with a heavier inert gas, such as Ar, to reduce cost and improve uniformity, or may be provided as a time-varying mixture of He and H2. The use of such a time-varying He/H2 mixture has particular advantages when used as part of an RO+-dominant HDP-CVD deposition in a dep/etch/dep process. During that deposition step, the mixture is initially dominated by He, which provides a minimal level of redeposition to provide material that will protect structures during the subsequent etching step. Later in the deposition, the mixture is dominated by H2, which helps to minimize any further redeposition and keep the gap open for improved overall gapfill. The variation may be performed continuously or in a stepwise fashion, including the circumstance where initially only He is flowed as a precursor gas and it is replaced by a flow of only H2 later in the process. A further discussion of such a time variation of He and/or H2 for the fluent gas is discussed further in Kapoor.
In some embodiments, the transition between the various deposition and etching steps, including any change in gas flows, chamber pressure, RF power levels, and other parameters, is done while a plasma is maintained in the chamber. In other embodiments, the plasma is extinguished between steps, gas flows and other parameters are adjusted in preparation for the next step, and a plasma is reformed. Embodiments in which the plasma is extinguished can be performed in situ either within a single chamber or in different chambers of a multichamber mainframe system, or performed ex situ in different chambers. In some embodiments, in situ processes are preferred for throughput and performance reasons.
Exemplary Substrate Processing System
The methods described above may be implemented with a variety of HDP-CVD systems, some of which are described in detail in connection with
The upper portion of chamber 713 includes a dome 714, which is made of a ceramic dielectric material, such as aluminum oxide or aluminum nitride. Dome 714 defines an upper boundary of a plasma processing region 716. Plasma processing region 716 is bounded on the bottom by the upper surface of a substrate 717 and a substrate support member 718.
A heater plate 723 and a cold plate 724 surmount, and are thermally coupled to, dome 714. Heater plate 723 and cold plate 724 allow control of the dome temperature to within about ±10° C. over a range of about 100° C. to 200° C. This allows optimizing the dome temperature for the various processes. For example, it may be desirable to maintain the dome at a higher temperature for cleaning or etching processes than for deposition processes. Accurate control of the dome temperature also reduces the flake or particle counts in the chamber and improves adhesion between the deposited layer and the substrate.
The lower portion of chamber 713 includes a body member 722, which joins the chamber to the vacuum system. A base portion 721 of substrate support member 718 is mounted on, and forms a continuous inner surface with, body member 722. Substrates are transferred into and out of chamber 713 by a robot blade (not shown) through an insertion/removal opening (not shown) in the side of chamber 713. Lift pins (not shown) are raised and then lowered under the control of a motor (also not shown) to move the substrate from the robot blade at an upper loading position 757 to a lower processing position 756 in which the substrate is placed on a substrate receiving portion 719 of substrate support member 718. Substrate receiving portion 719 includes an electrostatic chuck 720 that secures the substrate to substrate support member 718 during substrate processing. In a preferred embodiment, substrate support member 718 is made from an aluminum oxide or aluminum ceramic material.
Vacuum system 770 includes throttle body 725, which houses twin-blade throttle valve 726 and is attached to gate valve 727 and turbo-molecular pump 728. It should be noted that throttle body 725 offers minimum obstruction to gas flow, and allows symmetric pumping. Gate valve 727 can isolate pump 728 from throttle body 725, and can also control chamber pressure by restricting the exhaust flow capacity when throttle valve 726 is fully open. The arrangement of the throttle valve, gate valve, and turbo-molecular pump allow accurate and stable control of chamber pressures from between about 1 millitorr to about 2 torr.
The source plasma system 780A includes a top coil 729 and side coil 730, mounted on dome 714. A symmetrical ground shield (not shown) reduces electrical coupling between the coils. Top coil 729 is powered by top source RF (SRF) generator 731A, whereas side coil 730 is powered by side SRF generator 731B, allowing independent power levels and frequencies of operation for each coil. This dual coil system allows control of the radial ion density in chamber 713, thereby improving plasma uniformity. Side coil 730 and top coil 729 are typically inductively driven, which does not require a complimentary electrode. In a specific embodiment, the top source RF generator 731A provides up to 2,500 watts of RF power at nominally 2 MHz and the side source RF generator 731B provides up to 5,000 watts of RF power at nominally 2 MHz. The operating frequencies of the top and side RF generators may be offset from the nominal operating frequency (e.g. to 1.7-1.9 MHz and 1.9-2.1 MHz, respectively) to improve plasma-generation efficiency.
A bias plasma system 780B includes a bias RF ("BRF") generator 731C and a bias matching network 732C. The bias plasma system 780B capacitively couples substrate portion 717 to body member 722, which act as complimentary electrodes. The bias plasma system 780B serves to enhance the transport of plasma species (e.g., ions) created by the source plasma system 780A to the surface of the substrate. In a specific embodiment, bias RF generator provides up to 5,000 watts of RF power at 13.56 MHz.
RF generators 731A and 731B include digitally controlled synthesizers and operate over a frequency range between about 1.8 to about 2.1 MHz. Each generator includes an RF control circuit (not shown) that measures reflected power from the chamber and coil back to the generator and adjusts the frequency of operation to obtain the lowest reflected power, as understood by a person of ordinary skill in the art. RF generators are typically designed to operate into a load with a characteristic impedance of 50 ohms. RF power may be reflected from loads that have a different characteristic impedance than the generator. This can reduce power transferred to the load. Additionally, power reflected from the load back to the generator may overload and damage the generator. Because the impedance of a plasma may range from less than 5 ohms to over 900 ohms, depending on the plasma ion density, among other factors, and because reflected power may be a function of frequency, adjusting the generator frequency according to the reflected power increases the power transferred from the RF generator to the plasma and protects the generator. Another way to reduce reflected power and improve efficiency is with a matching network.
Matching networks 732A and 732B match the output impedance of generators 731A and 731B with their respective coils 729 and 730. The RF control circuit may tune both matching networks by changing the value of capacitors within the matching networks to match the generator to the load as the load changes. The RF control circuit may tune a matching network when the power reflected from the load back to the generator exceeds a certain limit. One way to provide a constant match, and effectively disable the RF control circuit from tuning the matching network, is to set the reflected power limit above any expected value of reflected power. This may help stabilize a plasma under some conditions by holding the matching network constant at its most recent condition.
Other measures may also help stabilize a plasma. For example, the RF control circuit can be used to determine the power delivered to the load (plasma) and may increase or decrease the generator output power to keep the delivered power substantially constant during deposition of a layer.
A gas delivery system 733 provides gases from several sources, 734A-734E chamber for processing the substrate via gas delivery lines 738 (only some of which are shown). As would be understood by a person of skill in the art, the actual sources used for sources 734A-734E and the actual connection of delivery lines 738 to chamber 713 varies depending on the deposition and cleaning processes executed within chamber 713. Gases are introduced into chamber 713 through a gas ring 737 and/or a top nozzle 745.
In one embodiment, first and second gas sources, 734A and 734B, and first and second gas flow controllers, 735A′ and 735B′, provide gas to ring plenum 736 in gas ring 737 via gas delivery lines 738 (only some of which are shown). Gas ring 737 has a plurality of source gas nozzles 739 (only one of which is shown for purposes of illustration) that provide a uniform flow of gas over the substrate. Nozzle length and nozzle angle may be changed to allow tailoring of the uniformity profile and gas utilization efficiency for a particular process within an individual chamber. In a preferred embodiment, gas ring 737 has 12 source gas nozzles made from an aluminum oxide ceramic.
Gas ring 737 also has a plurality of oxidizer gas nozzles 740 (only one of which is shown), which in a preferred embodiment are co-planar with and shorter than source gas nozzles 739, and in one embodiment receive gas from body plenum 741. In some embodiments it is desirable not to mix source gases and oxidizer gases before injecting the gases into chamber 713. In other embodiments, oxidizer gas and source gas may be mixed prior to injecting the gases into chamber 713 by providing apertures (not shown) between body plenum 741 and gas ring plenum 736. In one embodiment, third, fourth, and fifth gas sources, 734C, 734D, and 734D′, and third, fourth, and fifth gas flow controllers, 735C, 735D, and 735D′, provide gas to body plenum via gas delivery lines 738. Additional valves, such as 743B (other valves not shown), may shut off gas from the flow controllers to the chamber.
In embodiments where flammable, toxic, or corrosive gases are used, it may be desirable to eliminate gas remaining in the gas delivery lines after a deposition. This may be accomplished using a 3-way valve, such as valve 743B, to isolate chamber 713 from delivery line 738A and to vent delivery line 738A to vacuum foreline 744, for example. As shown in
Referring again to
A remote microwave-generated plasma cleaning system 750 is provided to periodically clean deposition residues from chamber components. The cleaning system includes a remote microwave generator 751 that creates a plasma from a cleaning gas source 734E (e.g., molecular fluorine, nitrogen trifluoride, other fluorocarbons or equivalents) in reactor cavity 753. The reactive species resulting from this plasma are conveyed to chamber 713 through cleaning gas feed port 754 via applicator tube 755. The materials used to contain the cleaning plasma (e.g., cavity 753 and applicator tube 755) must be resistant to attack by the plasma. The distance between reactor cavity 753 and feed port 754 should be kept as short as practical, since the concentration of desirable plasma species may decline with distance from reactor cavity 753. Generating the cleaning plasma in a remote cavity allows the use of an efficient microwave generator and does not subject chamber components to the temperature, radiation, or bombardment of the glow discharge that may be present in a plasma formed in situ. Consequently, relatively sensitive components, such as electrostatic chuck 720, do not need to be covered with a dummy wafer or otherwise protected, as may be required with an in situ plasma cleaning process. In one embodiment, this cleaning system is used to dissociate atoms of the etchant gas remotely, which are then supplied to the process chamber 713. In another embodiment, the etchant gas is provided directly to the process chamber 713. In still a further embodiment, multiple process chambers are used, with deposition and etching steps being performed in separate chambers.
System controller 760 controls the operation of system 710. In a preferred embodiment, controller 760 includes a memory 762, such as a hard disk drive, a floppy disk drive (not shown), and a card rack (not shown) coupled to a processor 761. The card rack may contain a single-board computer (SBC) (not shown), analog and digital input/output boards (not shown), interface boards (not shown), and stepper motor controller boards (not shown). The system controller conforms to the Versa Modular European ("VME") standard, which defines board, card cage, and connector dimensions and types. The VME standard also defines the bus structure as having a 16-bit data bus and 24-bit address bus. System controller 731 operates under the control of a computer program stored on the hard disk drive or through other computer programs, such as programs stored on a removable disk. The computer program dictates, for example, the timing, mixture of gases, RF power levels and other parameters of a particular process. The interface between a user and the system controller is via a monitor, such as a cathode ray tube ("CRT") 765, and a light pen 766, as depicted in FIG. 7C.
System controller 760 operates under the control of a computer program 763 stored in a computer-readable format within memory 762. The computer program dictates the timing, temperatures, gas flows, RF power levels and other parameters of a particular process. The interface between a user and the system controller is via a CRT monitor 765 and a light pen 766, as depicted in FIG. 7C. In a preferred embodiment, two monitors, 765 and 765A, and two light pens, 766 and 766A, are used, one mounted in the clean room wall (665) for the operators and the other behind the wall (665A) for the service technicians. Both monitors simultaneously display the same information, but only one light pen (e.g. 766) is enabled. To select a particular screen or function, the operator touches an area of the display screen and pushes a button (not shown) on the pen. The touched area confirms being selected by the light pen by changing its color or displaying a new menu, for example.
The computer program code can be written in any conventional computer-readable programming language such as 68000 assembly language, C, C++, or Pascal. Suitable program code is entered into a single file, or multiple files, using a conventional text editor and is stored or embodied in a computer-usable medium, such as a memory system of the computer. If the entered code text/is in a high level language, the code is compiled, and the resultant compiler code is then linked with an object code of precompiled windows library routines. To execute the linked compiled object code, the system user invokes the object code causing the computer system to load the code in memory. The CPU reads the code from memory and executes the code to perform the tasks identified in the program.
The signals for monitoring the process are provided by the analog and digital input boards of system controller 760, and the signals for controlling the process are output on the analog and digital output boards of system controller 760.
A process sequencer subroutine 820 comprises program code for accepting the identified process chamber and set of process parameters from the process selector subroutine 810 and for controlling operation of the various process chambers. Multiple users can enter process set numbers and process chamber numbers, or a single user can enter multiple process set numbers and process chamber numbers; sequencer subroutine 820 schedules the selected processes in the desired sequence. Preferably, sequencer subroutine 820 includes a program code to perform the steps of (i) monitoring the operation of the process chambers to determine if the chambers are being used, (ii) determining what processes are being carried out in the chambers being used, and (iii) executing the desired process based on availability of a process chamber and type of process to be carried out. Conventional methods of monitoring the process chambers can be used, such as polling. When scheduling which process is to be executed, sequencer subroutine 820 can be designed to take into consideration the "age" of each particular user-entered request, or the present condition of the process chamber being used in comparison with the desired process conditions for a selected process, or any other relevant factor a system programmer desires to include for determining scheduling priorities.
After sequencer subroutine 820 determines which process chamber and process set combination is going to be executed next, sequencer subroutine 820 initiates execution of the process set by passing the particular process set parameters to a chamber manager subroutine 830A-830C, which controls multiple processing tasks in chamber 713 and possibly other chambers (not shown) according to the process set sent by sequencer subroutine 820.
Examples of chamber component subroutines are substrate positioning subroutine 840, process gas control subroutine 850, pressure control subroutine 860, and plasma control subroutine 870. Those having ordinary skill in the art will recognize that other chamber control subroutines can be included depending on what processes are selected to be performed in chamber 713. In operation, chamber manager subroutine 830A selectively schedules or calls the process component subroutines in accordance with the particular process set being executed. Chamber manager subroutine 830A schedules process component subroutines in the same manner that sequencer subroutine 820 schedules the process chamber and process set to execute. Typically, chamber manager subroutine 830A includes steps of monitoring the various chamber components, determining which components need to be operated based on the process parameters for the process set to be executed, and causing execution of a chamber component subroutine responsive to the monitoring and determining steps.
Operation of particular chamber component subroutines will now be described with reference to
Process gas control subroutine 850 has program code for controlling process gas composition and flow rates. Subroutine 850 controls the open/close position of the safety shut-off valves and also ramps up/ramps down the mass flow controllers to obtain the desired gas flow rates. All chamber component subroutines, including process gas control subroutine 850, are invoked by chamber manager subroutine 830A. Subroutine 850 receives process parameters from chamber manager subroutine 830A related to the desired gas flow rates.
Typically, process gas control subroutine 850 opens the gas supply lines, and repeatedly (i) reads the necessary mass flow controllers, (ii) compares the readings to the desired flow rates received from chamber manager subroutine 830A, and (iii) adjusts the flow rates of the gas supply lines as necessary. Furthermore, process gas control subroutine 850 may include steps for monitoring the gas flow rates for unsafe rates and for activating the safety shut-off valves when an unsafe condition is detected.
In some processes, an inert gas, such as argon, is flowed into chamber 713 to stabilize the pressure in the chamber before reactive process gases are introduced. For these processes, the process gas control subroutine 850 is programmed to include steps for flowing the inert gas into chamber 713 for an amount of time necessary to stabilize the pressure in the chamber. The steps described above may then be carried out.
Additionally, when a process gas is to be vaporized from a liquid precursor, for example, tetraethylorthosilane (TEOS), the process gas control subroutine 850 may include steps for bubbling a delivery gas such as helium through the liquid precursor in a bubbler assembly or for introducing the helium to a liquid injection valve. For this type of process, the process gas control subroutine 850 regulates the flow of the delivery gas, the pressure in the bubbler, and the bubbler temperature to obtain the desired process gas flow rates. As discussed above, the desired process gas flow rates are transferred to process gas control subroutine 850 as process parameters.
Furthermore, the process gas control subroutine 850 includes steps for obtaining the necessary delivery gas flow rate, bubbler pressure, and bubbler temperature for the desired process gas flow rate by accessing a stored table containing the necessary values for a given process gas flow rate. Once the necessary values are obtained, the delivery gas flow rate, bubbler pressure and bubbler temperature are monitored, compared to the necessary values and adjusted accordingly.
The process gas control subroutine 850 may also control the flow of heat-transfer gas, such as helium (He), through the inner and outer passages in the wafer chuck with an independent helium control (IHC) subroutine (not shown). The gas flow thermally couples the substrate to the chuck. In a typical process, the wafer is heated by the plasma and the chemical reactions that form the layer, and the He cools the substrate through the chuck, which may be water-cooled. This keeps the substrate below a temperature that may damage preexisting features on the substrate.
Pressure control subroutine 760 includes program code for controlling the pressure in chamber 713 by regulating the size of the opening of throttle valve 726 in the exhaust portion of the chamber. There are at least two basic methods of controlling the chamber with the throttle valve. The first method relies on characterizing the chamber pressure as it relates to, among other things, the total process gas flow, the size of the process chamber, and the pumping capacity. The first method sets throttle valve 726 to a fixed position. Setting throttle valve 726 to a fixed position may eventually result in a steady-state pressure.
Alternatively, the chamber pressure may be measured, with a manometer for example, and the position of throttle valve 726 may be adjusted according to pressure control subroutine 860, assuming the control point is within the boundaries set by gas flows and exhaust capacity. The former method may result in quicker chamber pressure changes, as the measurements, comparisons, and calculations associated with the latter method are not invoked. The former method may be desirable where precise control of the chamber pressure is not required, whereas the latter method may be desirable where an accurate, repeatable, and stable pressure is desired, such as during the deposition of a layer.
When pressure control subroutine 860 is invoked, the desired, or target, pressure level is received as a parameter from chamber manager subroutine 830A. Pressure control subroutine 860 measures the pressure in chamber 713 by reading one or more conventional pressure manometers connected to the chamber; compares the measured value(s) to the target pressure; obtains proportional, integral, and differential (PID) values from a stored pressure table corresponding to the target pressure, and adjusts throttle valve 726 according to the PID values obtained from the pressure table. Alternatively, pressure control subroutine 860 may open or close throttle valve 726 to a particular opening size to regulate the pressure in chamber 713 to a desired pressure or pressure range.
Plasma control subroutine 870 comprises program code for controlling the frequency and power output setting of RF generators 731A and 731B and for tuning matching networks 732A and 732B. Plasma control subroutine 870, like the previously described chamber component subroutines, is invoked by chamber manager subroutine 830A.
An example of a system that may incorporate some or all of the subsystems and routines described above would be the ULTIMA™ system, manufactured by APPLIED MATERIALS, INC., of Santa Clara, Calif., configured to practice the present invention. Further details of such a system are disclosed in commonly assigned U.S. Pat. No. 6,170,428, filed Jul. 15, 1996, entitled "Symmetric Tunable Inductively-Coupled HDP-CVD Reactor," having Fred C. Redeker, Farhad Moghadam, Hirogi Hanawa, Tetsuya Ishikawa, Dan Maydan, Shijian Li, Brian Lue, Robert Steger, Yaxin Wang, Manus Wong and Ashok Sinha listed as co-inventors, the disclosure of which is incorporated herein by reference. The described system is for exemplary purpose only. It would be a matter of routine skill for a person of skill in the art to select an appropriate conventional substrate processing system and computer control system to implement the present invention.
Those of ordinary skill in the art will realize that processing parameters can vary for different processing chambers and different processing conditions, and that different precursors can be used without departing from the spirit of the invention. Other variations will also be apparent to persons of skill in the art. These equivalents and alternatives are intended to be included within the scope of the present invention. Therefore, the scope of this invention should not be limited to the embodiments described, but should instead be defined by the following claims.
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September (Swedish dance singer, real name: Petra Eos Marklund)
~ Person
Legal name: Petra Marklund
Petra Linnea Paula Marklund (Swedish pronunciation: [ˈpɛtra ˈmarklɵnd]; born 12 September 1984), better known as her stage name September, is a Swedish singer-songwriter. When September was younger, she started recording in professional studios around the age of twelve, and when she was in a rock band, she received a record deal. She first came to the music scene with her debut single "La La La (Never Give It Up)" in 2003, which was released from her first studio album September (2004). In 2005 she released her second studio album In Orbit, which spawned the hits "Satellites" and "Cry for You", the latter became a worldwide hit and Septembers biggest hit to date. Her third studio album Dancing Shoes (2007), produced the hit single "Can't Get Over" and was nominated for Best Dance Album at Grammis, she previously won the award for In Orbit. Her first Swedish language single "Mikrofonkåt" became her first number one hit in her native country, the song was included on her fourth studio album Love CPR (2011) which also hit number one in Sweden and subsequently became her best selling album so far. September released her first Swedish language studio album Inferno in 2012 along with the lead single "Händerna Mot Himlen" under her real name Petra Marklund.
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text:
Aivars was amazing. Everything you could ask for in a real estate professional. He was great to work with, very patient and understanding and was straightforward with process and recommendations. Would be glad to work with him again if I ever end up back in the Greenville area.
Aivars Mecs
20 Recent Sales (last 12 months)
Real Estate Broker-Owner (16 years experience)
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Ratings & Reviews
Aivers, was not only very professional and knowledgable, but he also took time to educate us in our first home purchase. I shopped around for real estate agents, and Aivers was the best by far.
We couldn't have asked for a better real estate agent and home buying experience! Aivars is extremely knowledgeable in his field. With our busy schedules Aivars was always willing and able to meet us at times that were convenient for us. We became more than just his clients, as he got to know us as a family and really understood our needs.
My husband and I couldn't have found a better real estate professional to help us through the process of finding and purchasing our first home. Aivars Mecs is well educated and extremely knowledgeable in the real estate market and proved to be an invaluable resource from start to finish. He was highly responsive and always had an answer or solution to any question or concern. But most importantly, it was clear to both my husband and myself that Aivars' main goal was to build a relationship with us, not just close a quick sale. That made all the difference in the world. We will certainly continue to build that relationship in future business dealings with Mecs Home Realty and would highly recommend him to anyone looking to buy or sell a home.
I have worked with Aivars Mecs for about two years on several transactions. He has assisted me in buying homes as well as selling homes in the Upstate South Carolina market. He is knowledgable of local and national trends and is very familiar with the market regarding investment properties. He also laughs alot which makes dealing with even the negative issues bearable. Steve M.
Worked for 6 months prior to buying reviewing homes in area. Visited area and saw about 50 homes. Agent was very organized had homes lined up for us to look at, discussed each home pluses and negatives. It was a very good experience and highly recommend Aivars as an agent.


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Go on a magical adventure with PINKIE PIE® pony from MY LITTLE PONY. This PINKIE PIE® plush has a bright pink mane and tail. Her bubbly personality makes PINKIE PIE® pony the perfect pal. Personalize this pretty PINKIE PIE® plush with clothing and accessories to make the perfect unique gift.
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Popular Chess Terms
A mastery of tactics is essential to a competitive chess player and Lev Psakhis is ideally qualified to show the way. In Advanced Chess Tactics Psakhis showcases many beautiful attacking games to make his points. Psakhis has the ability to explain deep analysis while also offering simple yet wise tips gleaned from his lifetime of experience.
Advanced Chess Tactics
Full notes to all the games PLUS some excellent photos and extensive commentary on the prelude and aftermath to this great event, the strongest tournament ever held up to that time. The AVRO tournament was held in the Netherlands in 1938, sponsored by the Dutch broadcasting company AVRO. The event was a double round-robin tournament.
AVRO 1938 International Chess Tournament
International Chess Tournament
Notes by Grekov and a host of great annotators including Lasker, Alekhine, Tartakower, Rabinovich, Burn, Grunfeld, Grigoriev, Levenfish, Romanovsky, Sozin, a.o., A tournament book worthy of this great event, which was one of Alekhine's finest performances. Easily one of the best tournament books ever published in English with a cornucopia of great games from the golden age of hypermodern chess.
Baden Baden 1925
International Chess Tournament
Notes by Maroczy, Charousek, & other contemporary masters with editing and additional commentary by John Owen. Chigorin & Charousek tied for first followed by Pillsbury, Schlechter/Janowsky, Winawer/Walbrodt, Tarrasch, Albin/Maroczy, Marco, Noa, & Popiel. Includes the Chigorin-Charousek tie-breaking match. Photos & career records of the contestants.
Budapest 1896
At Buffalo 1901 Pillsbury won ahead of Delmar, Napier, Howell, Marshall, and Karpinski in a double-round event. At Buffalo 1894 Showalter edged Pillsbury out by half a point, followed by Albin and Farnsworth also in a double-round format. Both tournaments are previously unpublished.
Buffalo 1901 and 1894
In 2013 chess returned to world headlines. The energetic Norwegian prodigy Magnus Carlsen was front page news and his fans were not disappointed: the World Number 1 won the World Championship. Carlsens Assault on the Throne gives an inside view of Carlsens dramatic journey: from one of eight challengers in the London Candidates tournament, with the near disaster in the final rounds, ending with triumph in Chennai. With behind-the-scenes stories and top-level analysis of the games, Kotronias & Logothetis have written the ultimate book on how Carlsen became the 16th undisputed World Chess Champion. This hardcover edition includes over a hundred colour photographs
Carlsen's Assault on the Throne
Chess Evolution 1 concludes Artur Yusupov's award-winning instructional series. Chess Evolution 1 is at the Fundamentals level, which shows chess players the basic ideas they should know as they set off on the road to mastery. Yusupov guides the reader towards a higher level of chess understanding using carefully selected positions and advice. This new understanding is then tested by a series of puzzles.
Chess Evolution 1 - The Fundamentals
The Fundamentals series shows players the basic ideas they should know, then the Beyond the Basics series sets off on the road to mastery. Yusupov guides the reader towards a higher level of chess understanding using carefully selected positions and advice. This new understanding is then tested by a series of puzzles.
Chess Evolution 2 - Beyond the Basics
This volume completes Artur Yusupov's course of chess improvement. The Fundamentals series showed players the basic ideas they should know. The Beyond the Basics series set off on the road to mastery, and now in the Mastery series we have arrived at our final destination. Yusupov guides the reader using carefully selected positions and advice. This new understanding is then tested by a series of puzzles.
Chess Evolution 3 - Mastery
It is widely accepted that learning chess has a very positive effect on children. Many parents want to help their children to study chess, but don't know how to do it. This book is the solution. It is a practical handbook that teaches the mysteries of chess with a light touch.
Chess for Kids and Parents
A supplement to the Chess player's handbook, containing all the most important modern improvements in the openings, illustrated by actual games; a revised code of chess laws; and a collection of Mr. Morphy's matches, &c., in England and France.
Chess Praxis
A Grandmaster Guide
An in-depth study of the 28 most common structures in chess practice, it offers a carefully selected model games showing each structure's main plans and ideas, Strategic patterns to observe and typical pitfalls to avoid and 50 positional exercises with detailed solutions
Chess Structures
Understanding Chess Tactics
These players clearly needed a good book, but when Weteschnik looked for it he found nothing suitable, so he decided to write it himself. But Weteschnik was not completely satisfied with the book and decided to restructure and rewrite it completely.
Chess Tactics from Scratch - 2ND EDITION
Publisher Dale Brandreth has a fine track record of bringing out high quality tournament books and best games collections. Here he rescues two lesser known US tournaments with the help of the energetic Robert Sherwood who provides detailed analyses to all the games. The Chicago International of 1926 saw Frank Marshall top the field ahead of Maroczy and Torre, with other famous names such as Edward Lasker and Isaac Kashdan in the chasing pack. Lake Hopatcong 1926 was a stronger double-round event with Capablanca winning ahead of Kupchik, Maroczy, Marshall and Ed.Lasker.
Chicago 1926/Lake Hopatcong 1926 Chess Tournaments
The Rules, the Moves, and the Strategies - All You Need to Know to Play the Game
If you're looking to learn about the game of chess and win, The Everything Chess Basics Book provides you with the perfect introduction! Endorsed by the United States Chess Federation, The Everything Chess Basics Book is an authoritative guide that appeals to chess players of all ages and skill.
Everything Chess Basics Book
In Attack & Defence Jacob Aagaard presents the main principles of how to attack and defend in chess. By carving dynamic chess into separate areas of ability, he gives the reader a clear way to expand his understanding of this vital part of the game.
Grandmaster Preparation - Attack & Defence
If you are human, then this book will offer you practical advice and an effective training plan to think differently and make decisions far more efficiently.
Grandmaster Preparation - Calculation
Jacob Aagaard presents the reader with a few key concepts in the endgame and invites him to test his skills with a lot of examples from recent tournament practice. Where many endgame books are theoretical and emphasize memorization, Endgame Play is based entirely in the real world, where the ability to react precisely in technical positions is a life skill.
Grandmaster Preparation - Endgame Play
In Positional Play Jacob Aagaard shares his simple three-step tool of positional analysis that he has used with club players and famous grandmasters to improve their positional decision-making. Working from the starting point that all players who aspire to play at international level have a certain amount of positional understanding, Aagaard lays out an easy-to-follow training plan that will improve everyone's intuition and positional decision-making.
Grandmaster Preparation - Positional Play - HARDBACK
In Positional Play Jacob Aagaard shares his simple three-step tool of positional analysis that he has used with club players and famous grandmasters to improve their positional decision-making. Working from the starting point that all players who aspire to play at international level have a certain amount of positional understanding, Aagaard lays out an easy-to-follow training plan that will improve everyone's intuition and positional decision-making.
Grandmaster Preparation - Positional Play - PAPERBACK
In Strategic Play Jacob Aagaard digs deep into the most complex area of chess thinking. The games and exercises in this book transcend regular chess skills, such as pattern recognition, calculation and positional analysis. Building on the two previous books in the Grandmaster Preparation series, this book challenges the reader to explore the complexities of chess, offering clarity and understanding through Aagaard's straightforward approach.
Grandmaster Preparation - Strategic Play - PAPERBACK
The French Defence is one of the most popular and reliable responses to 1.e4. Black invites his opponent to gain space in the centre, with the intention of undermining the enemy position and launching a counterattack. Although the amount of theory has expanded in recent years, the French often leads to positions where positional and strategic understanding prove more relevant than long sequences of computer-generated moves. Grandmaster Repertoire 14 - The French Defence 1 introduces the Winawer Variation after the opening moves 1.e4 e6 2.d4 d5 3.Nc3 Bb4, and provides expert recommendations against all of White's major possibilities
Grandmaster Repertoire - The French Defence - Vol. 1
The Modern Benoni arises after 1.d4 Nf6 2.c4 c5 3.d5 e6. It leads to unbalanced structures and exciting play, so it has naturally been a favourite of ambitious attacking players such as Tal, Fischer and, more recently, Topalov, Ivanchuk and Gashimov.
Grandmaster Repertoire 12 - The Modern Benoni
AN-Algebraic Notation.. Good notes to the games. An Alekhine victory ahead of Fine, Eliskases, Vidmar, among others.
Hastings 1936
Judit Polgar Teaches Chess - Volume 3
Game of Queens completes the trilogy in which one of the greatest players of our time transforms her personal journey to the top into a roadmap for everyone who ever wanted to better themselves in the game of chess. This volume covers the period from 2001 until the present day. These were the years when Judit was in the Top Ten in the world, and facing the likes of Kasparov, Karpov, Korchnoi and Anand.
Judit Polgar - A Game of Queens
Judit Polgar Teaches Chess - Volume 2
From GM to Top Ten continues the unique project where one of the greatest players of our time transforms her personal journey to the top into a roadmap for everyone who wanted to better themselves in the game of chess. In this volume, Judit tells the story of her rise from teenage grandmaster to Top Ten superstar.Judit Polgar has been ranked 1st on the Women's rating list from 1989 to this present day. In 2005, she became the only women in chess history to participate in the World Championship final. The previous volume, How I Beat Fischer's Record, won the 2013 ECF Book of the Year Prize.
Judit Polgar - From GM to Top 10
Judit Polgar Teaches Chess - Volume 1
In this very personal book Judit Polgar describes her early moments of success and the chess ideas she needed to master in order to achieve them.
Judit Polgar - How I Beat Fischer's Record
An English translation of this original famous tournament book in German by George Marco and Carl Schlechter. This edition has the advantage of enhancements such as the addition of 15 photos of many of the players along with corrections and additional analysis using the new, very strong program, Rybka.
Karlsbad 1907
The Making of a Champion
Anatoly Karpov was World Champion from 1975 to 1985 and is universally regarded as one of the greatest players of all time. Award-winning author Tibor Karolyi explains Karpov's genius with a particular focus on Karpov's unrivaled grasp of strategy. Karolyi has selected Karpov's most entertaining and instructive strategic wins from 1961-1985 as the Russian star proved he was a worthy successor to Bobby Fischer.
Karpov's Strategic Wins - 1961-1985 - VOLUME 1
The Prime Years
Anatoly Karpov was World Champion from 1975 to 1985 and is universally regarded as one of the greatest players of all time. Award-winning author Tibor Károlyi explains Karpovs genius with a particular focus on Karpovs unrivalled grasp of strategy. In this second volume, Károlyi has selected Karpov's most entertaining and instructive strategic wins from 1986-2010 when Karpov was battling with his young rival Garry Kasparov for chess supremacy.
Karpov's Strategic Wins - 1986-2010 - VOLUME 2
Every chess player loves to win with a devastating attack. But even beginners know the importance of early castling, so the most significant attacking strategies are those against a castled king.
Mating the Castled King
1949 - 1959 - The Magic of Youth
Mikhail Tal is one of the most celebrated chess players of all time. The eighth World Champion not only won the title at a record young age, but did so using a ferocious, high-risk attacking style. Tal's spectacular games, along with his charming personality and witty sense of humour, endeared him to the chess public like no other player.
Mikhail Tal's Best Games - VOL. 1
Aron Nimzowitsch was one of the greatest chess players of the 1920s and 1930s, ranked just behind the famous World Champions Alekhine and Capablanca. His reputation as an author is higher still.
My System is at the top of a very short list of chess classics. Nimzowitsch's ideas have had a profound influence on modern chess thinking. Most chess masters will at some point have studied Nimzowitsch's work, and not to have read My System is by many regarded as a shocking gap in a chess player's education.
My System
A first-rate tournament book for a strong US Championship in which Reshevsky just edged out Fine by 1/2 point. Kashdan was third followed by Pinkus, Simonson, Denker, Kupchik, Bernstein, Polland, Reinfeld, Shainswit, Adams, Seidman, Green, Hanauer, Woliston, and Littman. Notes to most of the games are from contemporary sources, and Fritz 7 checked many of the critical positions.
New York 1940
Although Rashid Nezhmetdinov (1912-1974) was not widely known in the West, his games have a great reputation among connoisseurs of attacking play. Among his many distinctions in chess are his score of six wins, nine draws and five losses against World Champions.
Nezhmetdinov's Best Games of Chess
International Chess Tournament
Notes to all the games plus two photos, bibliography, openings index, and tournament records of the contestants.
Nuremberg 1896


text: We've just enjoyed a few restful days in Cornwall staying at Coombe Farmhouse. Very peaceful spot and just down the road from St Ives with ample parking. We were able to drive to St Ives easily and visited all parts of Penwith without any traffic problems. Roslyn and Keith are great hosts who made us feel very 'at home'. Comfortable,... More


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This relaxing fountain is made of a lightweight and sturdy resin with an Italian rustic stone finish. This regal fountain includes LEDs for night time illumination. Powered by an energy efficient Infinity magnetic drive pump that recycles water from a hidden reservoir. It's easy to install and enjoy and creates a relaxing atmosphere on your patio, deck or in your garden. Infinity electric pump included, UL listed.
Features: Lighted
Frame Material: Resin
Finish: Textured
Protective Qualities: Weather-resistant
Power Source: Electric
Includes: Pump, Light Bulbs
Safety and Security Features: UL Listed
Care and Cleaning: Clean with Water and Stiff Brush
Dimensions: 37.0 " H x 17.5 " W x 26.0 " D
Weight: 50.6 Lb.
Warranty Description: 1 Year Limited Manufacturer Warranty
Assembly Details: assembly required
other Info.
Warranty Information
To obtain a copy of the manufacturer's warranty for this item, please call Target Guest Services at 1-800-591-3869.
- Online Item #: 13294312
- Store Item Number (DPCI): 084-09-0314
- Imported


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My quick is they work well for their designed purpose
from Temecula, CA Area
on 11/16/2013
This product works well for its designd purpose, however in my case & probably some other men with same body type will find that to get the ideal fit you will have to downsize in the waist one size considering the Lycra Spandex material will allow that and still maintain overall comfort while acquiring a better & tighter fit. For example I utilize this type of spandex shorts to go surfing in the summer or swim laps all year round. I have a fairly large waist with short legs, so if I downsize one size I still get comfort with shorter inseam for a overall better fit.
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Fine so far
David J. Anderson (Dave)
from Cedar Park, TX
on 7/28/2013
Hope these last better then my earlier Sporti Jammers. They stretched out of shape and wore thin and had to be thrown away. The compression jammers fit better and hold their shape and last longer.All my jammers are rinsed out of chlorine after every use.
Wear Out Fast
from Plainfield, IL
on 5/14/2013
I swim 2-3 times/week (1 hr. each) and these show signs of wearing out after 5 weeks. They are cut low on the stomach.
Certainly worth the sale price
from Pittsburgh, PA
on 3/19/2013
The "too small" comment means, the 34 I bought fits more like a 33 1/2; that is, there is not as much extra room as anticipated. The leg elastic is strong. The suit is a bit thirsty; is heavy when removed.All that said, if you get it at a sale price, you've done very well re a common-man's laps suit. Looks sleek, too.
Neon jammer
Swim mom
from Arkansas
on 10/17/2012
Thicker material. My swimmer really likes it.
Great. Finally wore them out.
L E Mallinckrodt
from Kirkwood, MO
on 1/30/2015
Nice suit. I'll order another.
Consistent quality
from Horsheads, NY
on 2/24/2014
I have been a customer for a few years. The product is just what I need. The price is right and the quality is consistent. Ordering and shipping are easy. I will return as a customer
Son's favorite
from Rome, GA
on 10/7/2013
My 12 yr old loves these. Wears them as often as possible.
good for the price
from Wichita
on 10/5/2013
Runs a little big...can't beat the price for practice jammers.
Just fine
Larry P.
from RI
on 10/2/2013
Works great, fits fine. Perhaps a bit low cut on waist but no big deal. Would buy again.
Everyone should swim in neon!
mary k.
from oak lawn, IL
on 9/26/2013
My son is enjoying the suit, and I enjoyed the value. Great product and great value.
Great Shorts
from Columbus, GA
on 9/14/2013
They fit well although next pair I order will be smaller size. I noticed a faster swim time with them versus regular swim suit.
Splice Jammer
Coach B
from Syracuse, NY
on 8/20/2013
great suit
Jammer review :(
from Oak Grove, MO
on 2/8/2013
Great while I had them... Only got to wear them once. Stolen in the locker room. Bet you've never received a comment like that before.?
Neon Jammer
Good material.
from Laredo, Texas
on 10/6/2012
This jammer is commfortable, true size. The price is acording to product.
Swim suit jammer
Jerry S.
from Shaver Lake, CA
on 4/5/2012
The fit is perfect and comfortable. True to size. Thanks Sporti.
Love the look & performance
Bruce A.
from Vancouver, WA
on 3/29/2012
I like the thin, double lining in the front. The sides look great. they are very comfortable to swim in. I like a longer leg so really like these Jammers a lot. Great value.
from bay city, Michigan
on 3/9/2012
Ideal suit for my daily lap swimming. Never thought the difference a " Jammer " suit makes. Very well pleased and glad that I ordered this suit. THANKS
Commenting on Sporti Neon Jammer Suit
David G.
from Bay City, MI
on 3/3/2012
This bathing Item " SUITS" me absolutely just fine and really put me In " The Swim of Things "! Best part is that for the quality and fit.... " It did Not cost me an arm and a leg through SwimWear Outet. Thanks


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Mill Creek Biotin Conditioner -- 16 fl oz
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The Search Party: Exploring New Media
Your guide to increasing sales with SEO and digital marketing
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How To Make Facebook Posts That Get More Likes
Posted by Rob Cibelli on Wednesday, October 3 at 10:10am
If your business has a Facebook page, it's time to start posting more pictures and writing your posts in the first person. Dan Zarella, award-winning and self-proclaimed Social Media Scientist, collected data on more than 1.3 million Facebook posts published on the top 10,000 most-liked Facebook pages. He put together his findings in an infographic to […] [Read More]
Categories: Facebook for businesses, Social Media, Statistics
Tags: Facebook | Facebook Business Listings | Facebook Likes | Rob Cibelli | SMO | More
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Small Business, the Web and Advertising
Posted by Jon Knott on Friday, July 13 at 10:44am
Join us! SmAlbany 2012 Small Business Expo, Sponsored by Times Union and GoogleFREE Admission Meet area small businesses from around the Capital Region Event: Tuesday, July 17, 2012 Location: College of Nanoscale Science and Engineering (CNSE) of the University at Albany Check out Keynote Speaker: Joe DeMike, Google at 10am & 1pm Recruiters and Vendors […] [Read More]
Categories: Backlinks , Backlinks , Bloggers , Blogging for Small Businesses , Content | More
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- Backlinks, Backlinks, Bloggers, Blogging for Small Businesses, Content, Facebook for businesses, Google, Google Analytics, Google: Maps and Local, LinkedIn, Local Search Engine Optimization, Meta Tags, Mobile Search, Pay Per Click, Pinterest, Search Engine Marketing, Search Engine Optimization, SEO Ranking Factors, Social Bookmarking Links, Social Media, Statistics
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Facebook Changes Are Coming March 30, 2012!
Posted by Geoff Schaake on Thursday, March 1 at 3:38pm
Like the way this looks? Come April, your Facebook fan page will have this sleak new look. Log into facebook now and click on your page to preview what this may look like. Click on this article to see the major changes and what it means for your business. [Read More]
Categories: Facebook for businesses, Social Media
Top 10 Social Media Tips for Bloggers
Posted by Jon Knott on Thursday, March 1 at 11:14am
We share this list of tips written by Liz Borod Wright, a freelance writer based in New York City, and runs the popular travel blog, Travelogged, to help you make blogging efforts more effective. More and more bloggers are driving traffic and building an audience by sharing with friends and fans on social media. Twitter, Facebook, StumbleUpon and Pinterest […] [Read More]
Categories: Bloggers , Blogging for Small Businesses , Content , Facebook for businesses , General | More
How To Grow Your Business With Facebook
Posted by Rob Cibelli on Monday, December 12 at 3:02pm
According to the December 2011 Netcraft Web Server Survey, there are currently more than 175 million active registered websites to date. By comparison, in 1995 the total number of websites registered on the internet (including inactive sites) was slightly less than 19,000. That being said, businesses today need more than ever to have (and maintain) an online presence […] [Read More]
Categories: Facebook for businesses, General, Social Media, Statistics
Tags: Facebook Business Listings | Hearst Digital Media | Rob Cibelli | Search Engine Optimization | SEO | More
"It's a lot of work and I have nothing to say"
Posted by Geoff Schaake on Thursday, December 1 at 10:51am
Chances are, small business owners in the Albany, NY Capital region opened their respective businesses for a reason. They are experts in their field of study and the business fills a niche or hole in the market. Successful business owners love to talk about their businesses with me and I love to listen to every […] [Read More]
Why Albany Businesses Need Search Engine Optimization (SEO)
Posted by Anthony Troia on Thursday, November 24 at 2:10pm
Local businesses fuel the overall economy, and coming out of a major recession, they need all of the help they can get. Search engine optimization and social media when used properly, has given local businesses a leg up on the competition. Google, Google Places and Facebook all work together in helping small businesses rank on […] [Read More]
Categories: Facebook for businesses , General , Google: Maps and Local , Local Search Engine Optimization , Search Engine Optimization | More
Tags: Albany NY Search Engine Optimization | Albany NY SEO Company | Anthony Troia | Anthony Troia - Social Media & Search Engine Optimization Strategist - Hearst Digital Media | Facebook Business Listings | More
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text:
The airport hit the century mark by 2 p.m. and hit 101 degrees an hour later, with high humidity causing a heat index of 111 degrees. The day started out at a low of 77 degrees at BWI.
Despite the heat's intensity, the record for June 29 at BWI could be hard to beat at 105 degrees, hottest on record for Baltimore in June.
Still, the region was bearing down for dangerous heat that could span a week or more.
Maryland health officials activated a statewide heat plan for Friday, urging residents to seek relief from the heat and be wary of heatstroke and heat exhaustion. The plan is in effect for Central Maryland and the Eastern Shore through Sunday.
Baltimore health officials said they plan to open cooling centers Friday through Sunday; Anne Arundel County is opening cooling centers Friday through Monday.
Smog is expected to reach unhealthy levels through the weekend. As of 2 p.m. ozone is at code red levels in Calvert County, Horn Point and southern Maryland.
Stay tuned for more updates on the mercury rising.
Have a weather question? E-mail me at firstname.lastname@example.com or tweet to @MdWeather.


text:
This MOD is being developed for American Conquest: Divided Nation/ The MOD is an American Revolution MOD
The American Revolution
The second half of the 18th century represented the bloodiest period of the 13 english colonies existence in America. Britain's high taxes, ever-lasting work and native american assaults on frontier settlements became unbearable for the colonists. The colonial congress voted to go to war with England, although some colonies weren't too keen on fighting the most powerful empire on earth. But regardless of what only 10% of the colonists thought, the english colonies turned their guns towards the British army. Diplomatic and military alliances were established between the american colonists and indian tribes in order to provide effective military inteligence. In 1775, the first two battles fought against the british in Massachusetts (Concord, Lexington) gave the green light to the war that would change the world for ever.
Epic Battles for Independence:
- The MOD will add 4 new nations (Americans; Great Britain; Canadians; France)
- The MOD will add up to 50 new American Revolution units.
List of unit lines/regiments Americans:
1. 7th Connecticut Regiment Infantry
2. 1st Delaware Regiment Infantry
3. 10th Massachusetts Regiment Cavalry
4. 9th Pennsylvania Regiment Infantry
5. 5th Virginia Regiment Cavalry
6. 1777 Virginia Militia Infantry
List of unit lines/regiments Great Britain:
1. Kings's 5th Regiment of Foot
2. Royal Highland Regiment of Foot
3. Glasgow's Royal Regiment of Cavalry
4. Yorkshire Royal Regiment of Cavalry
5. Westminister Volunteer Regiment of Foot
6. Hessian Mercenary Regiment of Foot
List of unit lines/regiments Canada:
1. Canadian Militia Regiment Infantry
2. Mountain Regiment of Cavalry
3. Royal French Regular Regiment Infantry
List of unit lines/regiments France:
1. Royal "Garde Francaises" Infantry
2. Regiment "De La Sarre" Infantry
3. "Cuirassiers Du Roi" Cavalry
4. "Colonel-Generale Dragoons" Cavalry
Four New Campaigns: "Invasion of Canada"; "Saratoga"; "Massachusetts"; "The Path To Liberty!"
The MOD will add new skins to the original Divided Nation
New epic-battle sounds
Improved American and British figting abilities and AI for an "epic"revolutionary feeling
2 New Hero units that boost formation and unit morale; "General George Washington" (Americans); "General LaFayette" (France) - Feature not yet decided.
MOD under construction!
The mod you are trying to view has been deleted and is no longer available. This may have occured at the developers request because it is no longer active and was not released, or it may have occured because it violated the sites Terms of Use. If this is a mistake and you are a member of this mods team and would like it re-activated, please contact us with the details.
If you would like to view other mod profiles, we suggest you browse the entire mod list.


text:
All Hail the Prints of England
Flora, Fauna and Fabergé Eggs Inspire Vibrant Colors and Patterns in a City Known for Showcasing Innovation
The runway collections this week showed off the city's reputation for fashion innovation, with a kaleidoscope of electric colors and cutting-edge prints.
Designers at the shows, which ended Wednesday, seemed to be in a cheery mood, at least in terms of color. "There's a strong trend for color and very loud color, you might say," said Colin McDowell, a longtime fashion writer and fixture at the London shows.
Nowhere was that more evident than in the designs of Daniella Helayel and Roksanda Ilincic. The atmosphere at the show for Ms. Helayel's Issa brand—a favorite of Prince William's fiancée, Kate Middleton—was euphoric, with the final look, a bright red gown, summing up the party feel as the 1980 song "Celebration" played. Meanwhile, Ms. Ilincic's eponymous line punctuated oatmeal and black looks with "shockingly strong" oranges, purples and reds that the Serbian-born designer said she worked closely with mills to create.
Many of the vibrant colors on the runway were showcased in strong graphic prints. From the prim yet decadent plants of Jonathan Saunders to Erdem's artsy collages and Mary Katrantzou's home décor, the use of digitally manipulated prints put London's creative talents on display.
'So Many Prints Going On'
"In the past five years, there have been so many prints going on, and it's kind of amazing because it allows you to express this desire for color," said Christopher De Vos, one half of the Peter Pilotto label. Peter Pilotto's youth-inspired collection was rife with chain prints that mimicked a checked pattern as they criss-crossed dresses and trousers and blurred into beams of color.
Erdem Moralioglu used vibrant color to a different effect. Erdem's darkly beautiful collection combined a modern artist's brush stroke of bright, chaotic patterns with luscious black velvet, chiffon and satin, moving away from his trademark feminine florals into something slightly more sinister.
Meanwhile, prints altered the mood of Jonathan Saunders's minimalist creations. This season, influenced by seductive 1940s photographs by Paul Outerbridge, the Scottish designer created patterns of flora and fauna in vibrant oranges, greens and blues that added an old-fashioned elegance to modern shapes. Mr. Saunders, whose background is in printed textiles, often begins his collections with hand-crafted designs and builds his pared-down silhouettes around them. He says that with this collection, it felt right to combine simple shapes "with the kind of opulent, opium, poppy prints and the jewel-like colors."
Images of Persian Textiles
Clements Ribeiro also went for a feeling of decadence. The label, designed by husband-wife team Inacio Ribeiro and Suzanne Clements, photographed antique documents of Ottoman and Persian textiles and morphed them into one another, using digital technology to blend and dissolve the patterns. When the prints were paired with Victorian jet beads, North African embroideries and longer, leaner silhouettes, the designers' collection took on a decidedly luxurious feel.
But no one is pushing the boundaries of printing quite like Ms. Katrantzou, a Greek designer who has made waves ever since she came on the scene three years ago. Last season, in her first solo catwalk show, she referenced interior design by sending out models dressed in skirts that resembled lamp shades and strong structured shapes, along with prints that replicated living spaces you'd expect to see in Architectural Digest. This season, Ms. Katrantzou built on that idea with designs inspired by Fabergé eggs and Meissen porcelain, moving deeper into the realm of decorative arts.
Heard on the Runway
Get the latest news and buzz from the fashion world. London fashion week recaps:
She said her spring collection had emboldened her to test the boundaries and push forward. "I was giving myself a master class in print and pattern and color," the designer said. She said that when she was creating the current collection, she "almost cried because my prints were controlling me." But by the time the designs hit the runway, her well-received trompe l'oeil and bias-cut dresses were fashion at its most innovative.
They were also London at its best, proving that this city, with its plethora of design colleges, is an incubator for the kind of talent that isn't afraid to question established rules. "I think the great vibe about London is that people aren't scared to express themselves," said Bridget Cosgrave, fashion and buying director at U.K. boutique chain Matches. "It's that sort of quirky individuality."
But the city's fall runways also included a refined, buttoned-up side that seemed an homage to history—and, perhaps, a delayed reaction to government austerity measures. Whether it was high ruffled collars and leather corsets over silk gowns at Giles, longer hemlines at Clements Ribeiro or Emilio de la Morena's sheer and structured refinement, designers seemed inspired by the prim past. But their creative twists offered a glimpse of London's future.
Write to Beth Schepens at email@example.com


text:
Rusbase and RVK get together for a picnic
Volleyball, kebabs and 'Venture Cherades' were on the menu last Sunday at Serebryany Bor
Patrick Schneider-Sikorsky
COO Russia at Black Ocean Group. I focus on building companies in Russia and helping them fundraise. email@example.com
Sophie Rigby
I study Russian, German and French at Sheffield University in the UK, and I love travelling, reading and singing.
Anton Yakovlev
Serial entrepreneur in IT, finance and marketing. Blogging about building global business with Russian bias. Twitter @tonyyakovlev firstname.lastname@example.com
Futuresay provides a better way to learn English - one-on-one lessons that are created around your personal needs and interests. (We launched under the name Learn2.) email@example.com
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text:
Airhead engine, trans, final drive swap question
I've got a 1974 r75 frame with a 1976 r90/6 engine and trans mounted. I've got a deal on a one owner 1977 r100s. Seems the bike has been sitting, does not presetly run and shows 40k actual miles ( all records with the bike). Question: would the r100 engine fit my frame? Would the trans fit my r90/6 engine? Would the final drive be of any use to me, either mount with the r100 installed given it can, or be used with the present r90? I looked on max BMW and the only numbers that swap out for sure it seems is the trans. I'd buy the bike as spares for my r90 cafe, with the idea of rebuilding the 100s and installing it in the r75/6 frame at some point.. Any info would be appreciated. If none of the above swaps is possible I'd pass ( as I don't need another project). Asking price is $750.00. Seems just for parts the bike is work that.
You should pass on that old piece of junk. What did you say the sellers phone number is????:evil
The later the better IMO regarding engines and frames. Get the bike and use the one you have now to fix up the later model. It will all swap but you have to mind what you are doing.
Well, I thought about that, but I've got tons of work on the old bike. Would the tank and cafe seat fit the r100? If so, I'd just need two swap over the headers and instrument cluster and a few ods and ends. Perhaps would be a better choice. But call me crazy, I rescued the old r90, got it working and looking great, and I'd hate to take her off the road.
So to sum up, we re saying I could in fact use all the parts from the r100 swapped to my present build?
My SWB /5 has a 77 R100s engine, trans, final drive, and front end. It all bolted in there as though BMW wanted for me to do so. It was no harder that if I had just taken out the original stuff and put it back in.
Oh what the hell, I'll get it and start another project..... I'll be airhead poor, got two now! :huh
can I have the rear drive off the R100S ? :D
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