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Posts filtered on Tag
Relive Game 3 with NBA.com's 'mini-movie'
Relive all the highlights of the Spurs' Game 3 victory with a special "mini-movie" at NBA.com. [Read More]
Spurs set Finals record for first-half shooting to retake control of series
The Spurs shot 75.8 percent in the first half to set franchise playoff and Finals records and Kawhi Leonard set a career-high with 29 points as they crushed Miami 111-92 in Game 3 to retake a 2-1 lead in the Finals. [Read More]
Scouting the Finals, Game 3
Breaking down Game 3 of the Finals with the series tied at 1-1 entering tonight's game in Miami. [Read More]
Spurs execution withers in fourth quarter
The Spurs have mastered the art of ball movement. But their defining characteristic abandoned them down the stretch in Game 2 in the face of Miami's heated defensive pressure. [Read More]
James dominates as Miami evens Finals with 98-96 victory
LeBron James answered his critics in resounding fashion, following up his cramp-induced absence late in Game 1 with 35 points in Game 2, leading the Heat to a 98-96 victory that tied the Finals at 1-1 heading out to Miami. [Read More]
Scouting the Finals, Game 2
The Spurs lead Miami 1-0 entering Game 2 of the Finals tonight at the AT&T Center. [Read More]
Spurs vs Heat Game 2 Preview
Express-News Spurs writer Jabari Young previews Game 2 between the Spurs and Heat and hear from Tony Parker, Boris Diaw, Danny Green, LeBron James, Chris Bosh and Ray Allen in this Express-News Game Preview. [Read More]
Heat put their streak to the test, and other notes
Miami has followed each of their last 12 playoff losses with victories, a streak they'll put to the test Sunday in Game 1 of the Finals. [Read More]
Beating the blitz: Spurs precision vs. Heat pressure
The chess match of the Finals has begun. The Spurs generally had their way offensively with Miami in Game 1, but not without committing 23 turnovers and defensive ace LeBron James sitting for much of the fourth quarter with cramps. [Read More]
Podcast: Quick thoughts from Sam Mitchell on Spurs-Heat
Express-News Spurs writer Jabari Young is joined by former NBA head coach and current NBA TV Analyst Sam Mitchell to discuss Game 1 of the NBA Finals. [Read More]
Show More


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Coded references to risqué and sexual matters were catnip to the lyricists Lorenz Hart and Cole Porter.
A feisty, Steve Jobs gee-whizzing in his black turtleneck about his latest gizmo is catnip.
In a culture that worships celebrities while pretending to disdain them, the Sony emails are catnip for the masses.
1712, American English, from cat (n.) + nip, from Old English nepte "catnip," from Latin nepta, name of an aromatic herb. The older name is Middle English catmint (mid-13c.).

subset: commoncrawl


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Views: 125
Tags: fearandloathing, johnnydepp, journalist
one of my favorite books. As your attorney I advise you to.......
take a hit out of the little brown bottle in my shaving kit.
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My Facebook account got hacked and the password was changed without my knowledge. I e-mailed Facebook to let them know about the issue, they e-mailed asking to send across details on prove that i am the owner of the account which we are talking about here. After 2 e-mails, no reply. Doe's anyone who i can get in touch with directly or how i would go about getting it re-actived? They "locked" it on me so that they can figure out the issue, and while they are doing this, no one has access to it.
Its been over 6 hours since i've had a response if anyone could help me its really appriciate it
the e-mail address in question is : email@example.com
Help get this topic noticed by sharing it on Twitter, Facebook, or email.
Need help getting in touch with Facebook to get my "locked" account re-active


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Ben Stiller to Direct Childress' THE MOUNTAIN for Fox
As first reported on Deadline.com, 20th Century Fox has acquired a spec script of Helen Childress' THE MOUNTAIN. According to the report, actor Ben Stiller will develop and direct the film. Stiller, along with his Red Hour partner Stuart Cornfeld, will also produce. This is not the first time that Stiller has collaborated with Childress. The two also wrote the 1994 comedy "Reality Bites".
Their current project will be a horror tale based on characters from Edith Wharton's Summer. It will be set in the early 1900s and center on a young woman who is forced to confront her past after she stumbles upon a mysterious object which holds many secrets. Stiller and Childress are also collaborating on an adaptation of the children's book The Snowy Day under his deal with Fox Studios. In addition, the busy actor is working on a remake of The Secret Life of Walter Mitty at Fox that he'll direct and star in. He's is also currently filming the Akiva Schaffer-directed comedy Neighborhood Watch with Jonah Hill and Vince Vaughn for Fox.
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Doesn't seem to stop some people from wearing a kilt - I'm sure that some people just treat it as fancy dress!
However, OH has Scottish forefathers on his mother's side - think it would be a good investment for him to get himself kitted out with a kilt, jacket etc rather than keep buying/hiring suitable suits for weddings etc. I think he'd look really good in a kilt
I wonder if Lidl are selling the right tartan
Nice link obelixx - I wonder if the molinia I saw is the shorter form that they have, as it's certainly not as tall as the other one pictured!
Have a look at the Purple Moor Grass, Molinia caerulea - it has lovely purplish seedheads - there's also a variegated form.
If you're soil's slightly acid and on the damp side it would be great.
Scale will put the plant under stress so it is less able to cope with other things. They should be selling plants in an optimum condition to cope with changing to a new environment. They're trying to pull the wool over your eyes. I'd still take it back.
But whatever you decide to do - good luck.
If I bought a tree which came complete with 30 scale insects I would take it back and demand a refund
Lily - don't tempt me! It's a Fast Day!!!
KEF, she'd look like this and I'd look like this
My experience of Scotland is a bit limited nightgarden - it is acknowledged that the week we chose to spend Midsummer's Day on the Hebrides had some particularly grim moments but some magical ones as well
Think you're doing brilliantly Johannele - and thanks for joining in with this - I saw some of your Whooper swans the other day, they're spending the winter over here in Norfolk and Cambridgeshire
Mine too


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Spanky Ham wrote:Apparently Nolan doesn't agree with you Pudge. If he thought Peters was good enough, then he probably wouldn't have asked/lobbied for Sol.
Doesn't make him right...
dirtybirdnw wrote:It's less about whether or not Peters is good and more about the fact that Peters isn't an NT that can be used in a 3-4. The Falcons brought in Soliai because they want to run 3-4 sets and you need a big meaty NT to do so. Peters is more a DE in the 3-4.
Yeah, I don't buy that. There is a long-held myth that in order to be an effective 3-4 nose, you gotta be massive. You need some size, but it's less about how much bulk you have and how you play.
The top 4 highest-graded NTs this past year were all the massive guys we've come to know: Damon Harrison (NYJ), Marcell Dareus (BUF), and Dontari Poe (KC) and Haloti Ngata (BAL). But you know who was 5th? 6-1/297-pound Glenn Dorsey.
And on tape, Peters and Dorsey are very similar players.
And there's nothing that is stopping Peters from putting on 10-15 pounds if that makes you feel better if he's 315-320.


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Below are top resources on SparkPeople for Yams Uses.
The poor potato. It really has gotten a bad rap.
A plentiful crop that's easy and inexpensive to produce, the potato has been a dietary staple across the globe for centuries. (Ireland, a country whose diet once relied almost entirely o... Read more
Dishes are usually packed with lots of fresh ingredients, and have many hot, spicy, flavorful, along with some sweet and sour options.
Common Ingredients:
These foods feature chili peppers, rice, noodles, sugar, citr... Read more
Faster than a speeding bullet…
More powerful than a locomotive…
Nutrient-packed with health enhancing properties…
Here come the SUPER FOODS!
These foods benefit your body in so many ways. They power your brain, and... Read more
Your immune system is important. Very much like your own personal army, it guards your body against attacks from invaders (like bacteria, fungi, and viruses), defending against infections and several kinds of cancer. And it's smart, too, often... Read more
I am using straight text
... Read more
I used to use Nexercise, but none of my friends would do it with me, so I stopped. It's a similar "earn XP to level up" system, but it was mostly solo unless you had friends on the leaderboard.... Read more
just starting using this app for motivation..trying to get into a healthier lifestyle... Read more
Orange county, ca
Hey guys! Just started using this app, looking for a group of people to keep eachother in check and motivate one another, whether its getting up in the morning or after work to get a workout in.... Read more
Question: anyone using the meal plan? And if so, how does it work... Read more
Did you know yams aren't just for the holiday meals? We have switched to yams. They are so good natural sweet and better for you less in calories then regular potatoes higher in fiber. You can bake them, broil them, boil them put them on the Bar-B... Read more
Consumption of natural resistant starch has been shown to result in decreased glycemic response in healthy individuals & diabetics. Resistant starch has an impact on weight loss, as it is a starch which goes undigested by the body. Foods with the... Read more
For those of you using GoodLife Fitness Centres as your tool to get fit! It's a good day!!... Read more
Have you heard about the new noodles that have no calories? It's true. These noodles have no calories, fat, gluten or carbs. Made from a soluble fiber derived from a Japanese yam, the noodles have been available in Japan for years.
Some health pro... Read more
This is the first in a series of blog posts about how to slim down your Thanksgiving side dishes and treats. For more information about healthier Thanksgiving cooking, read this article. The poor yam and sweet potato. These brightly colored and antio... Read more


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Where Can I Propose?
It's a classic question: What would that be, and how can I make sure it's unforgettable?
Coming to the rescue—rather gallantly—are Vir Sanghavi; author and host to several travel shows (including TLC), Ashwini Kakkar; the force behind one of India's leading luxury travel companies Mercury Travels, and Fiona Caulfield; the creator of the Love Travel brand of guidebooks.
Vir Sanghavi, Editorial Director, Hindustan Times - One man's romance is another man's cliché. But let me suggest the Taj Lake Palace, Udaipur.
Ashwini Kakkar, Executive Vice-Chairman, Mercury Travels - I have two options for you—the first being a luxurious spa vacation at Ananda–in the Himalayas, a serene location for your unforgettable day. Then there is another stunning destination in the high reaches of Himachal Pradesh, Wildflower Hall, Shimla in the Himalayas.
Fiona Caulfield, Founder and Creator, Love Travel Guides - I would suggest you head to Devi Garh, Udaipur. It's such a uniquely romantic spot.
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Why didn't we do that before?!
.... *looks left, looks right*
Oh yeah.
From Mark Rosewater's Tumblr: the0uroboros asked: How in the same set can we have a hexproof, unsacrificable(not a word) creature AND a land that makes it uncounterable. How does this lead to interactive play? I believe I'm able to play my creature and you have to deal with it is much more interactive than you counter my creature.
Post #777
MaRo: One of the classic R&D stories happened during a Scars of Mirrodin draft. Erik Lauer was sitting to my right (meaning that he passed to me in the first and third packs). At the end of the draft, Erik was upset because I was in his colors (black-green). He said, "Didn't you see the signals? I went into black-green in pack one." I replied, "Didn't you see my signals? I started drafting infect six drafts ago."
MaRo: I redesigned him while the effect was on the stack.
LSV narrating for the WIN!!
EDH decks I play:
Prossh: http://community.wizards.com/forum/commander-edh/threads/4101381
Derevi: http://community.wizards.com/forum/commander-edh/threads/4115936
Kaalia (the beats)
Zur (disgusting combo)
Damia (Bug Elf deck)
Numot (Stax)
Griselbrand (French)
Ghave (Uber combo)
Muzzio (Oops, Blightsteel)


text: Of all the members of this family of restaurants in the area, the T Bones in W Manchester/Bedford is by far our favorite. We were seated quickly for our Sunday early PM dinner, and both had and enjoyed the excellent baked haddock after sumptuous salads. The service was generally prompt, friendly... read more


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Deviant Art
Remind Me -LDR-They tell me long distance relationships never work. But if they did, how would anyone know?
They tell me to give up and find someone closer, but i refuse.
Long Distance:
It's the hard times, the longing, the dying to be with them. It's the sting left on your lips after waking up from a dream of their kiss.
It's knowing somewhere, far away, someone holds your heart in their hands so carefully, so sweetly. Patiently waiting to hold you, in their hands, instead. Though, they will not give your heart up, they will just keep it safe in their pocket as they finally hold their love.
It's knowing that you will wait forever to be with them, and wish the best for them.
It's knowing you hold their heart, too. Their precious heart.. beating for you. Knowing YOU are the one that holds it, no matter the distance.
It's knowing that of all the other guys/girls they know, they picked YOU. They chose to love YOU.
It's knowing what it is like to be so far apart, and cherishing the moments together twice
Adding Up The MilesAdding up the milesAdding Up The Miles8 years ago in Free Verse More Like This
between here and there
between one day and then next
...the hours
...the minutes
...the seconds
Adding up the baited breaths
between now and then
between "love" and "you"
...the words
...the thougts
...the waiting
Calculating just what it might take
to get me from the here and now
to where you're waiting...
LDR Guide Part 1Long Distance Relationship Tips!LDR Guide Part 15 years ago in Reviews & Guides More Like This
Part 1
By Michelle Williams
© 2010
Hey, I'm Michelle and I've been in my long-distance relationship with my sweetheart, Jorge, since January 2009. Here I am going to share some tips and tricks that my boyfriend and I have come across and used to keep our relationship going. This guide is targeted mainly at those of you in serious, long-term LDR relationships, but many of these tips can be applied to any relationship of any distance. Hope it helps!
1. Talk About What's Going On
One of the downsides of a long-distance relationship is the lack of actually being there to know what's going on in your partner's life. So how do you keep each other up to date? Talk. Talk about your day, what happened, who you talked to, what you ate, what you talked about, etc. Be sure to fill each other in on as many details as possible about your day. Do it everyday! Be descriptive and be thorough! This builds trust in your relationship and doesn't leave your part
The Curse of the New HeartThe events that took place on the roof were still a bit of a blur to Sherlock. He could remember his fear, the hopelessness that had engulfed him as he called John to say goodbye. He fell, and everything turned black. Then he woke up.The Curse of the New Heart2 years ago in General Fiction More Like This
The next few days had been worse than his panic in Dartmoor. He had found himself alone in an old sewer tunnel, lost and without his phone. All he had was his blood stained clothes and a pocket watch.
He was unscathed, but everything felt off. His mind was working faster than ever, but at the same time he did not feel overwhelmed. At least not by the work. The new, random, impossible information flooding his head was the problem. He could not believe it, the whispers that he was not human, but an alien from a planet galaxies away.
Sherlock had wondered if he was in some sort of afterlife, despite his disbelief of such a thing.
The whole idea of life after death was to comfort those who needed it, and so he discarded that theory.
There was a simple test, b
The Child in the WoodsThe Tardis landed on the bank of a quiet river and Sherlock Holmes emerged alone. He could see a boy sitting a few meters away tracing pictures into the dirt with a stick and oblivious to his presence. Sherlock circled around him, keeping out of sight in the forest of trees. When he was in position to approach the boy head on he started forward.The Child in the Woods2 years ago in Drama More Like This
Sherlock observed the boy. He was wearing old clothes that covered his bony frame and he had thick brown hair despite his malnutrition. Bruises ran up both sides of his head, the pattern suggesting they were intentional blows from an adult. Sherlock knew they would leave him partially deaf. The boy's legs were bent beneath him, ready to flee at a moment's notice.
There was a loud crack as Sherlock accidentally stepped on a brittle twig. The boy jumped up, eyes feral as he scanned the trees for the source of the sound.
Fearing the boy would run off Sherlock slowly walked into view with his arms raised at waist hight, similar to when
The Empty WatchJohn Watson stood at the grave of his best friend holding a watch in his hands. The early morning fog curled around him as he clutched it, feeling the clasp bite into his palm. It was just another painful reminder that Sherlock was gone. This stupid pocket watch.The Empty Watch2 years ago in Drama More Like This
He sat down on the grass and traced the circles etched on its case, remembering a time when when he had felt a living presence behind the doors. He had not seen it since a few months before his best friend's death and now, two years latter, it had appeared on his door step.
John closed his eyes as he remembered the bizarre situation that had led to his knowledge of the watch.
John and Mycroft were having a chat at 221b on one of the days Sherlock had left the country for a case. Mycroft had been giving him the usual talk when the door bell rang. A second latter Mrs. Hudson shouted something indiscernible as someone thundered up the steps.
The door crashed open and a woman stood bent double catching her breath. Mycroft ra
Returning HomeThe Tardis flew through the vortex and Sherlock tapped lightly at the control panel. "Have you ever reunited with someone after disappearing for years?" He asked abruptly.Returning Home2 years ago in Drama More Like This
The Doctor looked up from his side of the controls and replied, "I have disappeared for centuries. You are wonder about the best way to tell John that your alive, aren't you?"
Sherlock nodded and the Doctor smiled, "One time I disappeared for two years and reintroduced my self by jumping out of a cake at my friend's stag party."
"I will keep that in mind," Sherlock replied with feigned interest.
The Tardis landed with its usual 'vworps' and Sherlock turned on the cloaking device. "Can I do this alone?" he requested.
"Of course. You have been doing a lot alone of late."
Sherlock stepped out of the Tardis into a dimly lit office. He nervously paced around the room wishing he had his violin. His brother's voice could be
An Involuntary VacationHe had dropped the phone. Steeling himself, he took a deep breath and jumped.An Involuntary Vacation2 years ago in General Fiction More Like This
Sherlock's eyes snapped open and he let out a low growl of annoyance. It seemed every time he tried to analyze his 'death' the Tardis would start chiming. A second latter the Doctor rushed past him, mallet raised. Sherlock observed as the Doctor, manic as always when he heard the chime, hit the controls wildly.
The Tardis fell silent and the Doctor looked up, the mania and fear starting to fade from his face. "Sorry," the older man said as he ruffled his hair, "she is rather persistent."
Sherlock rose form his seat and walked over to the controls. He smoothed his palm over the ancient ship, which purred contently. "That is the fortieth time this month," Sherlock said studying the other man's face. The Doctor looked uncomfortable, anticipating his companion's next question. "What are you avoiding?" Sherlock asked, a hint
DreamsGun fire could be heard from the medial tent. John glanced at his only patient who was sleeping with the aid of powerful sedatives. A bullet shot through the air and John fell forward clutching his shoulder. Eyes watering with pain he could hear boot-clad foot steps rapidly approaching the tent. John looked up in time to see a soldier trying to enter pitch forward as a bullet caught him in the back.Dreams2 years ago in Drama More Like This
Wincing in pain John crawled to the man and felt his wrist for a pulse. Unable to detect one he rolled the man over to check his neck. He froze in horror as when he saw a mass of dark curls under the helmet. Sherlock's lifeless eyes stared up at him for the second time...
John woke up shaking, the image of Sherlock lying dead still raw in his mind. He remembered when he had watched Sherlock jump from the hospital and dry sobs rose in his chest. He rolled onto his side and felt on his table for the pocket watch. When his hand came in contact with the cold metal he let out a little sigh
The Waiting GameThe purple dress shirt was torn, shredded from the fray it had endured. The collar was stained a deeper cerise from the gaping wounds at his face and neck, spouting blood like a fountain spouts water. His body lay limply on the stretcher as he was wheeled through the endless rush of the white, sterile halls of the hospital.The Waiting Game3 years ago in Drama More Like This
He followed his inert friend, concern tattooing his brow, and heart pounding out a frantic tribal beat that could be heard the world over. Someone, maybe the D.I, pulled on his sleeve, trying to get him to retreat, trying to get him out of the way of the running nurses and doctors who shouted orders for drugs and procedures in some strange, clandestine tongue.
He could be treating him...after all, he was a doctor, and a damn good one at that. He had seen wounds far worse then this, far more bloody and bruised.
...but the tears that pooled up on the bottom of the raw sienna eyes was enough to convince him that he wasn't the man for the job. Not this time.
He stood, p
Soaked (Mycroft x Reader One Shot)It was raining. Pouring actually. Normally this wasn't a problem, you loved the rain, but today it was entirely unwelcome. It had been pleasantly sunny when you left the flat and you had dressed appropriately in a light sweater and jeans with a pair of flats but now it was raining.Soaked (Mycroft x Reader One Shot)2 years ago in General Fiction More Like This
You were soaked and shivering, as you trudged down the street towards the flat where John and Sherlock were waiting for you to come back from work. There hadn't been any time for you to duck under an awning before you were drenched by the sudden down pour, the sky seemingly dumping a bucket of water on you, and what was little more water when you were already wet. Your teeth had just begun to chatter when the rain suddenly wasn't hitting you anymore.
"You are going to catch a cold running about in weather like this my dear." Came a familiar voice and you looked up to find Mycroft softly smiling down at you, holding his umbrella over your head.
Despite your current state,
Slenderman -3-Slenderman -3-4 years ago in Introductions & Chapters More Like This
I actually never thought of that before.
In his pondering, he ceased his hold on the boy he possessed. The person got up and tried to run. Slenderman got back to his senses and jumped to his own feet. He almost caught the boy again when I stepped out of my circle in the opposite direction. I saw my chance to escape and took it. He sensed that and turned to me, but I was too far away now. He stood there, torn on who to pursue.*
*Because of this, both the boy and myself managed to get away. This may have infuriated Slenderman.
Another, more abrupt time-lapse took place. I saw the images of myself finding hiding places in classrooms, but shortly ditching them, regardless if Slenderman was anywhere nearby. I finally found myself in a strange, blank room that reminded me of a nurse's office. I found all of the other teens from before there, lying on their backs. They were all lying on their own salt pinnacles, and I found one for myself. In time, too: Slenderman was in the open
|Sta.sh Submit


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Busselton 5 star hotels
Find quality 5 star hotels in Busselton, Australia. Busselton 5 star hotels are also well known for their Location and Hotel Staff.
- 5 star hotels
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1 Aqua Resort Busselton
4.5 / 5 2 reviews
605 Bussell Highway Map
Aqua Resort Busselton delivers attractive luxury beach houses in the secluded privacy of the seaside town of Busselton. Vacationers have the freedom to easily explore the Margaret River Wine Region... More
Prices reflect the lowest "base rate" found over the next 30 days. Rates are subject to change and may not include taxes and fees, hotel service charges, extra person charges, or incidentals, such as room service. Converted rates are provided for your convenience. They are based on today's exchange rate, but the hotel will charge you in the local currency. Taxes may be payable in addition.


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Wow, so desperate....
It was a great game, I think they will play Japan and revenge what happened in 2011.
This is a gift, only idiots will sell quality stocks tomorrow or rest of the week, this Greece BS is over blown.
Greece stuff is BS, market is over reacting, every few months there is a European country that causes a sell off and later you will realize that it was buying opportunity. in a few weeks this will be forgotten and we will move to Italy or Spain. Europe is incompetent to get anything done and it starts with Germany, France.
England was the smart country not to get involved with the EURO.
Talk to us in a few months when it's sitting at $160 or higher. It's not matter of if, but when.
It will move when least expected, this is the prefect set and calm before the storm. It has been a while since last big move, but it's coming soon. When it comes it will be +10 - 15 in a week or 10 days.
Greece is nothing and will be forgotten again, This song has played way too many times.
It's already priced in, market will rally if they do it today.
Is coming, I love the fact that the stock has not done much in a few months, when the move comes it will be fast and furious.
Best thing to do is buy 2016 and 2017 leaps and sit tight.
SEC has been incompetent and useless from the top to the bottom for the past 20 years. They were warned about Madoff, but never took action until it was too late. In a few years they will come and say back in 2014 - 2015 there were some illegal option trading that took place on stocks like AAPL, AMZN, PCLN, etc. They are running about 5-7 years behind. It is all about the number of puts and calls.
They will miss.
Once again the MM's at their best, took the price up in the monring and sucked in more cal buyers, little by little they will take it down and close it at $125. Look at the price at 1:00 PM PST.
You have to remember, all stocks go up and down based on what the MM's decide to do with them. It no longer matter if earnings are good or bad? look at AMZN, NFLX and what they did after earnings were announced. In the 80's and 90's the stocks moved on fundamentals without the option manipulation. Today its a different game. No matter AAPL did the stock would have gone down.
Your logic would have applied to the stock price in the 80's and early 90's, but not in 2015.
All this means nothing, it goes down and up based on MM's and number of calls and puts that are sold. People can believe what they want.
$124.60 - $125.25 and will close at $125.01
Charts? are you serious? did the chart tell you we will be at $125 this week or the options?
You are 100% correct, this has nothing to do with the watch, EU tax, Ipad sales or anything else. $125 is the number and we will see where it ends tomorrow. How else the WS crooks van afford expensive cars and houses.
If you ask SEC, they will tell you this is normal trading and there is not enough there for an investigation. they are backed up with other important investigations.
Will not see below $120 unless the market gets ugly. Bottom line is in 6 months you will make profit, so it doesn't matter if you guys at $125 or $120 or $133. This is the stock to on in 2015 - 2016 and maybe even 2017.
Is that why the big volume after hours?
This is not new, it's very depressing and disappointing, but it it what it is. Options have taken control over this stock and MM's are not being monitored, it is a bunch of HP servers that are programmed by crooked Humans to kill the options prices every Friday. This is reality for now.


text:
Empty Promises: And Other True CasesCD-Audio Ann Rule's Crime Files
List price $14.99
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Additional formats available
- Format
- CD-Audio $19.98
- Publisher: Brilliance Corporation
- Format: CD-Audio
- Dimensions: 140mm x 165mm x 18mm | 204g
- Publication date: 3 July 2013
- Edition: Abridged
- Edition statement: Abridged
- Sales rank: 1,238,402
Product description
In this unnerving collection drawn from her personal crime files, "America's best true-crime writer" (Kirkus Reviews) Ann Rule brilliantly dissects the convoluted love affairs that all too often end in violence. Expertly analyzing a shocking, headline-making case, Rule unmasks the deadly motives inside a seemingly idyllic marriage: a beautiful young wife, a rising star in America's top-ranked computer corporation, and a prosperous husband, the scion of a family building business. With an adorable son and a gorgeous home, the couple seemed to have it all. But a furtive evil permeated their days and nights, dragging them into a murky world of drugs, sordid sex, and con operations. In this realm, one of them would prove to be a virtual innocent, the other a manipulator with no conscience. Sudden, violent death brought their charade of a fairy-tale romance to a tragic end - with a brutal crime that might never have come to light were it not for the stubborn detectives and prosecutors whose fight for justice spanned an entire decade. Empty Promises recounts several other cases where the search for love brought only lies and betrayal - a cautionary primer, perhaps, for those who trust too much too soon. Powerful because they strike so close to home, the cases in Empty Promises will leave readers shaken by the realities of love gone terribly - and fatally - wrong.
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Get your vintage fix from amongst thousands of classic items of clothing & accessories on Oxfam's Online Shop. For more from Oxfam Vintage why not visit our Vintage page for tips on looking after your vintage clothing, the Oxfam vintage blog, and more!
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text:
We've got a lot of shared libraries in our project which reside under specific path (but not in Perl's default @INC).
By default,
cover -t would report coverage on both the modules being tested and our common modules. I only need coverage figures on the modules I'm developing.
I've tried adding the path to the --ignore_re, but it didn't help.
So the question is: is there a way to exclude a module path from coverage test?


text:
If you create a class with related joins and use them,
the entries on the intermediate table won't be deleted
along with the object itself. I have found this really
Attached patch deletes these related join rows from all
objects refering to the object being destoyed and from
the joins of the object itself.
The patch is against SQLObject subversion head as of
9th November 2006.
Markus Niemistö
New patch with a small bug fixed
Oleg Broytman
Logged In: YES
Applied and committed in the revisions 2072-2074. Many
thanks! I added a test, see test_delete.py.
Oleg Broytman


text:
up to 50%
Sarah & Bendrix is a small design studio based in Surrey, United Kingdom. est. 2009 by Veronika. We enjoy making our products which are not massed produced and we only sell items from other small independent shops and designers. We specialise in personalised framed pictures but also sell posters, wooden toys, paper products, jewellery and clothes.
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"A very good quality product, with a customer service model to match. Perfectly presented, wrapped and delivered. I would definitely use 'Sarah & Bendrix' again."


text:
Book your room at Hotel Senacki
Get an overview of this hotelFamily-friendly Krakow hotel in Old Town, walk to Wawel Castle
This family-friendly Krakow hotel is located in the historical district, within a 5-minute walk of Jagiellonian University – Collegium Juridicum and Wawel Castle. Main Market Square and St. Mary's Basilica are also within 10 minutes.
Hotel Features
This smoke-free hotel features meeting rooms, concierge services, and dry cleaning. Free buffet breakfast and free WiFi in public areas are also provided. Additionally, laundry facilities, a 24-hour front desk, and free newspapers are onsite.
Room Amenities
All 20 rooms offer free WiFi and free wired Internet, plus minibars and room service. Guests will also find coffee makers, free bottled water, and hair dryers.Information missing or incorrect? Tell us!
Hotel Amenities
Hotel Amenities
A complimentary breakfast is offered each morning. Public areas are equipped with complimentary high-speed wireless Internet access. This family-friendly hotel also offers tour/ticket assistance, gift shops/newsstands, and concierge services.
Hotel Senacki is a smoke-free property.
- 24-hour front desk
- Babysitting or childcare (surcharge)
- Airport transportation (surcharge)
- Total number of rooms - 20
- Number of floors - 4
- Free newspapers in lobby
- Free breakfast
- Concierge services
- Dry cleaning/laundry service
- Elevator/lift
- Gift shops or newsstand
- Tours/ticket assistance
- Laundry facilities
- Meeting rooms
- Porter/bellhop
- Safe-deposit box at front desk
- Smoke-free property
- Wedding services
- Free WiFi
Family Friendly Amenities
- Family Hotel
- Free Wi-Fi
- Laundry facilities
- Babysitting or childcare (surcharge)
Available in all rooms: Free WiFi , Free wired high-speed Internet
Available in some public areas: Free WiFi
Room Amenities
- Hypo-allergenic bedding available
- Minibar
- Coffee/tea maker
- Free bottled water
- Daily housekeeping
- Private bathroom
- Hair dryer
- Iron/ironing board (on request)
- Desk
- Cribs/infant beds available
- Free WiFi
- Free wired high-speed Internet
- Room service (limited hours)
Where to Eat
A complimentary buffet breakfast is served each morning between 7 AM and 10 AM.
Room service (during limited hours) is available.
To make requests for specific accessibility needs, complete the "Special or Accessibility Requests" section of "Trip Preferences" when you book your hotel.
- Accessible path of travel
- Accessible bathroom
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Hotel Policies
Check-in time starts at 2 PM
Check-out time is noon
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Children and extra beds
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You need to know
Extra-person charges may apply and vary depending on hotel policy.
Government-issued photo identification and a credit card or cash deposit are required at check-in for incidental charges.
Special requests are subject to availability upon check-in and may incur additional charges. Special requests cannot be guaranteed.
- A tax is imposed by the city: PLN 1.60 per person, per night
- Airport shuttle fee: PLN 80-110 per vehicle (one way)
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- Pet fee: PLN 60 per pet, per night
- Rollaway bed fee: PLN 60-130 per night
We should mention
Children 4 years old and younger stay free when occupying the parent or guardian's room, using existing bedding.


text:
The Best of America's First Couturier, Charles James
Wednesday, May 7, 2014 | 1 year ago
The annual fashion exhibition at the Met, which is kicked off by the Costume Institute Gala Benefit, is always one of the most anticipated openings each year. "Beyond Fashion," this year's retrospective about America's first couture designer, Charles James, promises to be just as grand: It features 75 of the most notable designs produced by the self-taught New York native over the course of his career, from the 1920s until his death at the Chelsea Hotel in 1978. This exhibit spans two locations inside the Met: The first floor features James's ball gowns from the '40s and '50s, worn by such clients as Austine Hearst, Millicent Rogers, and Dominique de Menil. The second part takes place in the new Anna Wintour Costume Center and features the designer's biography through archival pieces including sketches, pattern pieces, swatches, ephemera, and partially completed works from his Chelsea Hotel studio. The exhibition runs through August 10, The Metropolitan Museum of Art, $25 suggested donation.
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text:
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text:
Disclosed is a method of making ohmic and/or Schottky barrier contacts to a silicon semiconductor substrate in which before depositing the metal on silicon semiconductor substrates containing integrated circuits which are covered by a mask having contact windows, the metal is initially deposited on freshly cleaned blank silicon semiconductor substrates mounted in the same vacuum chamber. In this manner any traces of oxygen present in the vacuum chamber are chemisorbed by the blank substrate resulting in deposition of a high quality oxide-free metal contacts on the device substrates.
The disclosed apparatus comprises a deposition chamber maintained at a predetermined low pressure, a substrate holder carrying a plurality of blank silicon substrates and silicon substrates containing integrated circuit structures covered by a mask having contact windows, a source of metal placed in the chamber for evaporation or sputtering and a shutter arranged in close proximity with said substrate holder for shielding selected substrates during the initial stages of metal deposition.
1. A low temperature method for fabricating a silicon dioxide-free conductive contact on a semiconductor substrate having integrated circuit devices thereon, said method comprising:
(a) placing a semiconductor substrate having integrated circuit devices (device substrate) and atleast one clean, blank silicon substrate in a deposition chamber maintained at a predetermined low pressure;
(b) heating said substrates to a low temperature in the range of 330� C. to 550� C.;
(c) shielding said device substrate by means of a shutter arranged in close proximity to said device substrate;
(d) depositing a conductive metal on said atleast one blank substrate at said low temperature and pressure for a short period of time to remove any trace of oxygen in said chamber by chemisorption of said oxygen by said atleast one blank substrate and thereby establishing an oxygen-free environment in said chamber;
(e) unshielding said device substrate by opening said shutter; and
(f) depositing on atleast a selected portion of said device substrate said conductive metal at said low temperature and pressure in said oxygen-free environment, whereby is formed on said atleast a selected portion of said device substrate a conductive metal contact free of an oxide layer.
2. The method as recited in claim 1 wherein said metal is selected from the group consisting of platinum, palladium, nickel, rhodium, zirconium, hafnium, aluminum, tantalum, titanium, tungsten and titanium-tungsten.
3. The method as recited in claim 2 wherein said device substrate exhibits N- type conductivity and said contact is a Schottky barrier diode contact.
4. The method as recited in claim 2 wherein said contact is an ohmic contact.
5. The method as recited in claim 2 wherein said deposition steps are accomplished by E-beam evaporation.
6. The method as recited in claim 2 wherein said deposition steps are accomplished by high frequency cathode sputtering.
7. The method as recited in claim 5 or 6 wherein prior to placing said blank substrate in said chamber cleaning said blank substrate surface in a diluted hydrofluoric acid solution.
8. The method as recited in claim 5 or 6 wherein said predetermined low pressure is in the range 2.5�10-6 -4�10-7 torr.
9. The method as recited in claim 8 wherein said metal depositing on said blank substrate is accomplished for about 30 seconds.
10. A low temperature method of forming silicon dioxide-free metal silicide connecting contact on a semiconductor silicon substrate having integrated circuit structures thereon, said method comprising:
placing a semiconductor silicon substrate having integrated circuit structures which are covered with a mask having contact windows (device substrate) and atleast one clean, blank silicon substrate in a deposition chamber maintained at a predetermined low pressure;
heating said substrates to a low temperature in the range of 330� C. to 550� C.;
shielding said device substrate by a substrate shield arranged in close proximity to said device substrate;
depositing a metal on said atleast one blank substrate at said low temperature and pressure for a short period to remove any traces of oxygen in said chamber by chemisorption of said oxygen by said atleast one blank substrate and thereby establishing an oxygen-free environment in said chamber; exposing said device substrate by removing said substrate shield;
depositing in said contact windows of said device substrate said metal at said low temperature and pressure in said oxygen-free environment; and
sintering said device substrate at a sufficient temperature and time in a suitable ambient to convert said metal in said contact windows to corresponding metal silicide.
11. The method as recited in claim 10 wherein said short period is about 30 seconds.
12. A low temperature method for forming a silicon dioxide-free platinum silicide contact on a semiconductor wafer having integrated circuit structures, said method comprising:
placing a silicon wafer having integrated circuit structures (device wafer) and atleast one clean, blank silicon wafer in a deposition chamber maintained at a low pressure; heating said wafers simultaneously to a low temperature in the range of 330� C.-550� C.;
shielding said device wafer by means of a shutter arranged in close proximity to said device wafer;
depositing platinum metal on said at least one blank wafer at said low temperature and pressure for a period of about 30 seconds to remove any traces of oxygen present in said chamber by chemisorption of said oxygen traces by said atleast one blank wafer as the platinum is deposited and thereby establishing an oxygen-free environment in said chamber;
exposing said wafer substrate by removing said shutter; depositing on at least a selected portion of said device wafer said platinum at said low temperature and pressure in said oxygen-free environment; and
sintering said device wafer at a sufficient temperature and time in a suitable ambient to react the deposited platinum with the silicon thereunder forming platinum silicide contact.
1. Field of the Invention
The invention relates to a method of making ohmic and/or Schottky barrier diode contacts to a semiconductor substrate, more particularly, to a method of making oxide-free contacts and to an apparatus for implementing the method.
2. Description of the Prior Art
The requirements for a material or combination of materials to provide ohmic and Schottky barrier diode contacts to semiconductor substrates are extremely high both from an electrical and chemical standpoint.
Numerous metallurgical systems which are known to semiconductor designers have been proposed and utilized as ohmic and Schottky barrier diode contacts. The single most successful metal used in interconnections of integrated circuits is aluminum or aluminum doped with a small amount of copper or silicon. Aluminum makes good ohmic and mechanical contact to the silicon and to the surrounding insulating layers. It is easy to deposit by standard evaporation or sputtering techniques and can be easily patterned by etching or similar techniques. However, aluminum has a tendancy to interact with silicon, particularly at high temperature processing, causing short circuits between the aluminum and the semiconductor substrate. In addition, aluminum alone forms neither a very high, nor a low, barrier height Schottky barrier contact to silicon.
Another metallurgical system that has been suggested for utilization as ohmic and Schottky barrier contacts to silicon semiconductor substrates is a metal-silicon compound known as a silicide. In this connection silicides such as platinum silicide, palladium silicide, nickel silicide, rhodium silicide, zirconium silicide, hafnium silicide, have been proposed. A prior art reference in this context is IBM Technical Disclosure Bulletin, Vol. 13, No. 3, August 1970, pp. 646-648, C. I. Kirchner and H. N. Yu, "Fabricating a Gate Field-Effect Transistor".
Reference is made to U.S. Pat. No. 3,274,670 which discloses a method of forming low-resistance electrical contacts to semiconductor devices by depositing on a silicon substrate a thin layer of platinum and heat treating to form platinum silicide. Thereafter, a composite layer of platinum, titanium and gold is deposited over the platinum silicide.
Reference is made to U.S. Pat. No. 3,290,127 which discloses forming an active contact layer of palladium silicide as a surface barrier with the semiconductor material. Silver-gold metallization is then formed over the contact layer. According to this patent other suitable metals in place of palladium include nickel, copper, rhodium, platinum, tungsten, molybdenum.
U.S. Pat. No. 3,893,160 discloses a resistive connecting contact for a silicon semiconductor substrate formed from a layer sequence of platinum silicide-titanium-molybdenum-gold.
Referring to the prior art on Schottky barrier diode contacts, it is known, for example, from U.S. Pat. No. 3,906,540 to form on the surface of a silicon semiconductor body a layer of a metal silicide such as platinum silicide, then applying a refractory metal barrier layer such as molybdenum, titanium, tungsten, tantalum, followed by forming an aluminum contact layer. The refractory metal barrier layer prevents intra-diffusion of aluminum and silicon constituents during subsequent heat treatments.
From U.S. Pat. No. 3,995,301 a Schottky barrier structure is known where a metal layer of Al2 Pt is in contact with a high resistivity semiconductor region. The structure is fabricated by first forming a platinum silicide layer on a silicon substrate and then applying an aluminum layer thereon after which the structure is sintered at a temperature of at least 400� C. for at least one hour.
Thus, the literature is replete with a multitude of metallurgical systems which fulfill one or more functions as metallurgical contacts. One of the most successful of these systems for ohmic contacts is platinum silicide/aluminum and for Schottky barrier contacts is a system which utilizes a barrier layer consisting of chromium, titanium, tungsten or a titanium-tungsten alloy between aluminum and the silicide layer.
The above discussed metals which are known for their suitability for contact metallization are usually applied on carefully cleaned silicon semiconductor subtrates provided with a mask layer having the desired contact openings, typically, by electron beam evaporation or cathode sputtering techniques in a high vacuum at temperatures higher than approximately 350� C. These methods of application in a high vacuum present a number of problems which hitherto could not be solved satisfactorily. For example, in the production of platinum silicide semiconductor contacts by evaporation of platinum in a high vacuum at a temperature of approximately 350� C. and subsequent sintering, forming of platinum silicide in the contact region is impeded by the presence of a thin surface layer of silicon which is rich in oxygen. This oxygen-rich layer, which can be detected by means of Auger-electron spectroscopy, causes a deterioration of the electrical contact properties. Schottky barrier diodes fabricated in this manner exhibit a high contact resistance and a non-linear behavior. Also, during the cleaning of the contacts prior to the evaporation of the aluminum metallization it was even possible to completely remove the platinum silicide due to etching of the underlying oxygen-rich layer. The application of other metals for the contacting of semiconductor substrates revealed similar phenomena.
It is believed that the oxygen-rich layer is a layer of silicon dioxide which grows in the exposed contact regions of the silicon substrate during the above-mentioned 350� C. process step, due to the presence of oxygen and steam residues in the vacuum chamber. Consequently, to improve the contact behavior attempts were made to reduce the oxygen content in the vacuum chamber. One approach is to improve the vacuum in the evaporation by installing a Meissner trap and a cryopump. However, the long cooling and heating cycle of the Meissner trap reduces the throughput.
Another approach is to reduce the substrate temperature during the deposition of the platinum layer. The disadvantage of this method, however, is poor adhesion of the platinum silicide film to the silicon semiconductor substrate resulting in poor electrical contact properties. Attempts were also made to initially deposit the platinum film on cold silicon wafers and as the deposition progressed heat the wafers to a temperature of approximately 350� C. The disadvantage of this method is that it is difficult to control and therefore not suitable for manufacturing purposes.
The cleaning of the substrate surface by means of high frequency cathode sputtering in a vacuum chamber prior to the deposition of a metallic film has been described in the literature (e.g., see the article by R. M. Anderson and T. M. Reith in J. Elec. Chem. Soc., Vol. 122, 1337, 1975). This method although leads to a cleaning of the substrate surface, due to resputtering during cleaning metallic impurities such as iron and nickel are deposited on the surface of the silicon wafers. In addition to forming metallic impurities, the cleaning technique does not fully remove the oxygen.
Reference is also made to German Offenlegungsschrift No. 2,758,576 which concerns a high temperature method for reducing traces of undesired heavy metals such as nickel, copper, iron and gold which entered the doped semiconductor wafer during fabrication of silicon semiconductor devices. In this method one or more doped semiconductor wafers are arranged along the longitudinal axis of a sealed quartz tube and flanked on either side by high purity unprocessed silicon semiconductor wafers. The undesired traces of heavy metals are removed by maintaining in the quartz tube an inert gas atmosphere at a pressure of approximately 1�10-6 torr and temperature of 1100� C. for a period of at least 10-60 minutes.
It is therefore an object of the invention to provide an improved method of making ohmic and/or Schottky barrier contacts to semiconductor substrates.
Another object of the invention is to provide a method for making oxide-free ohmic and Schottky barrier contacts to semiconductor substrates.
It is still another object of the invention to provide a method of making ohmic and/or Schottky barrier metal or metal silicide contacts to semiconductor substrates by reducing the oxygen content in the high vacuum system utilized for depositing the metal.
These and other objects of the invention are achieved by a novel method of forming ohmic and/or Schottky barrier contacts to a silicon semiconductor substrate in which before depositing the metal, typically, by utilizing a high vacuum deposition system maintained at a temperature of about 350� C., on a substrate having various integrated circuit structures which are covered with a suitable mask having contact windows (device substrate), the metal is deposited on one or more clean, blank silicon substrates mounted in the same deposition system. Due to chemisorption, any traces of oxygen present in the deposition chamber are removed by the blank substrates. Thereafter, the metal is deposited on the device substrate forming the metal contacts in the exposed areas of the device substrate. Since the oxygen has been effectively removed from the deposition chamber before depositing the contact metal, no oxidation of the device substrate occurs during the metal deposition and the contacts to the device substrate are free of oxide.
The apparatus in accordance with the invention is a deposition system having a high vacuum deposition chamber suitable for evaporation or sputtering of a source of metal placed therein. Arranged inside the deposition chamber is a rotatable substrate holder carrying a plurality of freshly cleaned blank silicon substrates and silicon substrates having integrated circuit devices with contact windows formed thereon. Adjacent the substrate holder are provided a combination of heating elements and reflectors for uniformly heating the substrates to a desired temperature. The chamber is fitted, in close proximity with the substrate holder, a rotatable shutter for shielding selected substrates from metal deposition. Another rotatable shutter, arranged in close proximity with the metal source, controls not only the initiation and termination but also the rate of metal deposition on the substrates.
In operation, the substrates having the integrated circuits are arranged such that they are initially shielded by the substrate shield. After establishing the desired temperature and pressure inside the chamber the metal is deposited exclusively on the blank substrates for a short period of time, about 30 seconds. During this step, any traces of oxygen present in the chamber will be chemisorbed by the blank substrates leaving the chamber oxygen-free. Thereafter, the substrates having the integrated circuits are exposed by removing the substrate shield and the metal is deposited in the contact windows therein.
The method of the invention can be advantageously used for making Schottky barrier diodes with low barrier height taught in U.S. Pat. No. 4,215,156 which is assigned to the present assignee. In this method the contact metal is tantalum which is deposited using an evaporator at a low pressure on the opened contact windows of a silicon substrate maintained at a low temperature. Consistently excellent electrical properties can be obtained if prior to depositing the tantalum in the contact windows it is deposited on freshly etched blank silicon semiconductor substrates mounted in the same evaporation system as discussed hereinabove.
The invention will now be described in detail with reference to the attached drawings which illustrate a preferred embodiment.
FIGS. 1A to 1F are fragmentary, sectional views of a semiconductor device incorporating the process of the invention during various stages of fabrication.
FIG. 2 is a novel apparatus for making oxide-free ohmic or Schottky barrier contacts on a semiconductor substrate.
Oxide-free metal or metal silicide contacts to silicon substrates in accordance with the invention are formed by utilizing the novel apparatus schematically illustrated in FIG. 2. The apparatus consists of a deposition chamber 100 which is connected to a vacuum pump (not shown) for maintaining a uniform high vacuum therein. Inside chamber 100 is mounted near the ceiling thereof, in a rotatable arrangement, a substrate holder 103 for holding a plurality of substrates 101 and 102. Substrates 101, for example, are freshly cleaned blank silicon semiconductor substrates and substrates 102 are silicon substrates containing integrated circuit devices and covered with a mask having contact windows. Above the substrate holder 103 are provided a plurality of heating elements 108 and a reflector 104 for uniformly heating the substrates 101 and 102 to a desired temperature in the range 330�-550� C.
A source 105 of a desired metal for deposition in the contact windows of substrates 102 is placed at the bottom of the deposition chamber. The metal source 105 is provided with a rotatable shutter 106 for not only setting the starting and end points of the metal evaporation, but also controlling the rate of metal deposition on the substrates.
The deposition chamber 100 is also provided, in close proximity with the substrate holder 103, a rotatable shutter 107 for effectively shielding substrates 102 during the initial stages of the metal deposition.
In operation, all the substrates mounted on the substrate holder 103 with the surface on which the metal is to be deposited facing down. The substrates are heated by means of the heating elements 108 in a high vacuum in the range 2.5�10-6 -4�10-7 torr to a desired substrate temperature in the range 330�-550� C. The shutter 107 is then arranged such that the device substrates 102 are effectively shielded during the initial stages of metal deposition. The metal 105 is then caused to evaporate and the evaporated metal is allowed to deposit on the blank substrates 101 by opening the shutter 106 for a period of about 30 seconds. During this short initial deposition step any oxygen present in chamber 100 is chemisorbed by the exposed blank substrates 101 thereby establishing an essentially oxygen-free high-vacuum environment therein. Thereafter, shutter 107 is opened and the metal is allowed to deposit on the device substrates 102 forming the metal contacts with these substrates in the areas corresponding to the contact windows. Since all traces of oxygen have been removed from the deposition chamber prior to depositing the contact metals on the device substrates, no silicon dioxide layer is formed in the contact areas and the resulting metal contacts are oxide-free.
Having described in detail the apparatus for forming oxide-free metal contacts, a detailed description of forming Schottky barrier diodes and ohmic contacts will now be provided.
Referring to the drawings, FIG. 1A illustrates that portion of a semiconductor chip which is to contain ohmic contacts and Schottky barrier diodes made using the method of the invention. The semiconductor chip substrate 1 is illustrated as P-type silicon, for example, having a resistivity of 10 ohm-cm. Disposed on substrate 1 is an N- epitaxial layer 3 which preferably exhibits a conductivity of 1�1016 to 8�1016 atoms/cm3. Buried within the structure are N+ regions 4 and 6 having associated therewith reachthrough regions 5 and 7, respectively. The substrate also contains P+ subisolation region 2 which, in association with P+ isolation region 8, separates the N+ regions from each other.
Regions 2, 4 and 6 are advantageously formed by the standard process of diffusing said regions into windows which expose portions of the bare substrate 1. Typical N+ impurities are arsenic and phosphorous; a typical P+ impurity is boron.
The masking layer is then stripped from substrate 1 by conventional etching techniques and layer 3 is grown epitaxially thereby causing regions 2, 4 and 6 out-diffuse into layer 3. A masking layer which is typically composed of a silicon dioxide layer 9 and a silicon nitride layer 10 is then formed on the surface of layer 3 and windows are made in this masking layer through which N+ and P+ impurities are diffused to form reach-through regions 5 and 7 and isolation region 8, respectively.
The next step is deposition in blanket fashion a platinum layer 15 atop the silicon nitride layer 10 and within windows 11, 12, 13 and 14. This is accomplished by utilizing the apparatus shown in FIG. 2. The wafers are first pre-cleaned in an aqueous hydrofluoric acid solution (having a ratio of H2 O: HF in the range 15:1 to 5:1) and then placed on the substrate holder 103 in the deposition chamber 100 in the position corresponding to one of the two substrates 102 (FIG. 2). The substrates designated by numeral 101 in FIG. 2 are freshly cleaned silicon substrate blanks (i.e. unprocessed silicon semiconductor substrates having no integrated circuits). All silicon substrates in the substrate holder 103 are then heated in a high vacuum of 2.5�10-6 torr by heating elements 108 to a desired substrate temperature, e.g. 350� C. Before depositing the platinum by evaporation or cathode sputtering the substrate containing integrated circuits 102 is masked from the platinum source 105 by shutter 107 so that at first platinum will deposit only on the blank silicon semiconductor substrates 101. During this pre-platinum deposition step, lasting for less than about 30 seconds, any oxygen remaining in the vacuum chamber is chemisorbed by the blank semiconductor substrates, resulting in a practically oxygen-free high vacuum environment in the deposition chamber 100. Subsequently, shutter 107 is opened and platinum is allowed to deposit on the silicon semiconductor substrate 102 until a layer thickness of approximately 400Å has been formed.
Referring to FIG. 1A silicon dioxide layer 9 in window 13 prevents the platinum in this window from contacting substrate 3.
Referring to FIG. 1B, the wafer is then sintered at a temperature of 550� C. for approximately 20 minutes in a nitrogen ambient causing the platinum to react with the silicon to form platinum silicide 15' in windows 11, 12, and 14. The unreacted platinum, including that which is atop silicon dioxide layer 9, is then removed by etching in aqua regia. In the next step of the process as shown in FIG. 1C, the portion of silicon dioxide layer 9 which is deposited in window 13 is removed by standard wet or dry etching techniques to expose that portion of the substrate which is to constitute the anode of low-barrier-height Schottky barrier diode.
The deposition of a metallization system, e.g. of tantalum in windows 11 to 14 is carried out subsequently. The preferred process includes lift-off technique described in U.S. Pat. No. 4,004,044 which is assigned to IBM Corporation, the present assignee. This process is illustrated in abbreviated form in FIGS. 1D to 1F and will be described below. Alternative techniques for forming the metallurgy are standard wet or reactive ion (plasma) subtractive etching processes which are well known to those skilled in the art. However, the lift-off process is capable of providing superior definition of the metallurgy, thereby minimizing the area required for wiring.
Turning now to FIG. 1D the lift-off process commences with the blanket deposition of a thin layer of polyether sulfone 20 which facilitates the lift-off process. The use of polysulfone is a modification of the method disclosed in the aforementioned patent and has been described in the article by Carr et al in IBM Technical Disclosure Bulletin, Vol. 19, No. 4, September 1976, p. 1226. Disposed atop polyether sulfone layer 20 a layer 22 of an organic polymer material such as a novolak-resin-based positive photoresist which is baked at 210�-230� C. to render it non-photosensitive. Atop photoresist layer 22 is coated a barrier layer 24 consisting of a methylsiloxane resin followed by a layer 26 of a radiation sensitive resist.
Layer 26 is then subjected to radiation and is developed to provide a patterned relief image corresponding to windows 11, 12, 13 and 14 of FIG. 1C. Photoresist mask 26 is then used to permit selective removal of the underlying layers 20, 22 and 24 to expose windows 11', 12', 13' and 14' illustrated in FIG. 1E, which correspond to the windows illustrated in FIG. 1C.
After the windows are formed, the exposed substrate, including the platinum silicide layer 15', is precleaned in a 15:1, or lower, ratio of water to hydrofluoric acid etchant solution under controlled radiation conditions disclosed fully in U.S. Pat. No. 4,215,216 which is assigned to the present assignee. A ratio of 5:1 is most advantageous. This surface preparation step is a requirement to achieve a low-barrier height (i.e. around 0.5 eV) Schottky barrier diode.
Attempts have made to clean the semiconductor surface by the technique of in-situ sputter cleaning in a sputtering chamber. This method did yield a barrier height of approximately 0.5 eV but the barrier height was not repeatable from run to run.
Returning to FIG. 1E, a metallization layer 28 is blanket deposited atop the substrate and the lift-off mask. In the present embodiment tantalum is used. To achieve a low-barrier-height Schottky barrier contact, the tantalum deposition process also must conform to an exacting procedure. The deposition is best accomplished with an E-beam evaporation source using the same deposition system used for the deposition of the platinum layer 15 discussed above in connection with FIG. 1A. The maximum pressure in the evaporation chamber during the process is approximately 2.5�10-6 torr, with the initial pressure in the chamber being less than approximately 4�10-7 torr. The maximum temperature of the substrate is 200� C. The importance of the pressure lies in the amount of moisture, hydrocarbons and other gaseous contaminants present in the chamber. The higher the pressure, the greater the moisture and contaminants which cause tantalum layer to oxidize slightly, resulting in a barrier height of greater than 0.5 eVolt.
In spite of the stringent vacuum requirements during tantalum deposition process a sufficient constancy of the electrical properties of the Schottky barrier diode was not guaranteed and occasional yield loss was inevitable. The reproducibility of the electrical properties, however, can be considerably improved if prior to depositing the tantalum on the silicon semiconductor substrates containing integrated circuit structures tantalum is deposited on blank silicon semiconductor substrates. This is accomplished utilizing the apparatus shown in FIG. 2 wherein the metal source 105 is tantalum, substrates 101 correspond to blank silicon substrates and either of the two substrates 102 correspond to the substrate under consideration. During the initial stages of tantalum evaporation, using shutter 107 the semiconductor substrate 102 containing integrated circuit structure under consideration is shielded. After all traces of oxygen have been removed from the deposition chamber shutter 107 is opened and tantalum is deposited on substrate 102. The evaporation which is executed at a rate of approximately 2Å per second is continued until a layer thickness of 600�150Å has been reached. The tantalum deposition of the semiconductor substrates can be carried out by means of electron beam evaporation or under the same pressure and temperature conditions by means of high frequency sputtering. The tantalum which is formed using this method is body-centered-cubic.
Following the deposition of tantalum layer 28, layer 30 of chromium and layer 32 of aluminum or copper-doped aluminum or copper-doped aluminum-silicon are deposited, preferably in the same evaporation chamber 100 (FIG. 2).
The chrome is deposited to a preferred thickness of between 600Å and 1000Å. Water vapor must be bled into the chamber during the evaporation. The substrate is held at a maximum temperature of 160� C. The chromium which is deposited with water vapor being bled into the chamber acts as an effective barrier layer between aluminum and tantalum.
The aluminum is advantageously deposited to a thickness of approximately 8500-10,000Å. Aluminum doped with a small amount of copper is preferable to pure aluminum. The resultant intermediate structure thereby achieved is illustrated in FIG. 1E.
The remaining lift-off structure 20-22-24 and overlying metal layers 28, 30 and 32 are quickly lifted off using N-methylpyrrolidone or another suitable solvent to leave a pattern of metal adhered to the surface of the substrate or oxide layer 10 as shown in FIG. 1F.
Next, the structure is sintered at 400� C. for approximately 1 hour and then resintered for another 2 hours at 450� C. This sintering is necessary to achieve a Schottky barrier diode barrier height of 0.5 eV.
This completes the basic process and leaves both high-barrier height and low barrier height Schottky barrier diodes. The anode and cathode of the high-barrier height Schottky barrier diode are identified in FIG. 1F by the reference numerals 34 and 35, respectively. The anode and cathode of the low-barrier-height Schottky barrier diode are identified by the reference numerals 36 and 37, respectively. Thus, using the same metallurgy (tantalum) three different types of contacts were fashioned. The cathodes 35 and 37 of both diodes are ohmic contacts to N+ regions 5 and 7 in layer 3. The anode 34 of the high-barrier height Schottky barrier diode uses the chromium-tantalum metallurgy between the platinum silicide 15 and the aluminum 32, the chromium layer 30 acting as a diffusion barrier. Platinum silicide 15' yields an increased barrier height as compared to anode 36 of the low-barrier-height Schottky barrier diode, where no platinum silicide is present. In region 36 the tantalum 28 itself directly contacts the N-conductive silicon substrate 3.
In practice, the tantalum is not necessary in forming the high-barrier height Schottky barrier diode. A contact comprising aluminum, chrome and platinum silicide is perfectly satisfactory. However, it is more practical in a manufacturing environment to deposit the tantalum in blanket fashion within all contact openings.
While the invention has been particularly shown and described with reference to a preferred embodiment thereof, it will be understood by those skilled in the art that changes in form and detail may be made therein without departing from the spirit and scope of the invention.
For exaample, although the invention has been described with particular reference to an integrated circuit structure wherein ohmic contacts and high- and low-barrier Schottky barrier contacts are made, it is not necessary to fabricate all such contacts to be within the purview of the invention.
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Monday night was the last Raw before WrestleMania XXX down in New Orleans. The final stop on the road to WrestleMania was the Verizon Center in Washington, D.C.
The fans in our nation's capital got to see a solid show with some good wrestling and a very hot ending. Before we dig deep into my observations, here are the results of the matches that took place Monday night:
- Alberto Del Rio def. Big E
- Summer Rae def. Natalya


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