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Being an entrepreneur is good preparation for being a government chief technology officer (CTO).
Year CTO Position Created
Reports to
Previous Jobs
Aneesh Chopra, Executive Office of the President
President/White House chief of staff
Applies new technologies to strengthen the U.S. economy, connect people with the government, and promote government oversight and accountability. Acts as vice chairman of White House health care IT task force.
Virginia's secretary of technology; venture capitalist.
Chris Kemp, NASA
Chief information officer
Oversees NASA's Enterprise Architecture division and efforts for introducing emerging IT into the agency. Will manage a new CTO Council and explore ways to increase the energy efficiency of NASA's IT environment.
Co-founder of Web start-ups; business development director at NASA.
Peter Levin,Veterans Affairs Department
Office of the Secretary
Identifies technologies for improving electronic health records for veterans. Also spearheads a VA drive to convert paper-based claims processing to a system that uses electronic documents.
Founder and executive of software company start-up; venture capitalist; university dean.
Todd Park, Health and Human Services Department
Identifies technologies related to health care reform. Runs the agency's response to the White House's Open Government Directive. Leads the Community Health Data Initiative for distributing health information to the public.
Founder and chief executive officer of a Web start-up.
Bryan Sivak, District of Columbia
Mayor's office
Acts as top IT official for the District of Columbia. Manages the district's centralized data center operations and directs an internal research lab for identifying and prototyping new technologies. Oversees new initiatives proposed by departmental CIOs.
Founder and executive at a software start-up.
Roger Smith, Army's Program Executive Office for Simulation, Training and Instrumentation
Program Executive Officer
Identifies, evaluates and champions new technologies for next-generation simulation, training and instrumentation systems.
CTO and manager of private-sector hardware and software companies.
* Norm Lorentz was the first CTO at the Office of Management and Budget in 2002.
Source: Federal Computer Week
Related stories
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CTO résumés shine with entrepreneurial success stories
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Woman arrested for alledged murder of husband
BISBEE — A Bisbee woman is facing second degree murder charges after allegedly killing her husband during a possible domestic violence situation.
According to Sgt. Taron Maddux, public information officer for the Bisbee Police Department, a 911 call came in at 11:33 p.m. on Tuesday from Cristi Sue Luna, 52, who reported that her husband 70-year-old Daniel Patrick McNary had a cord around his neck and was not breathing.
"Police and fire rescue personnel responded to the call on O'Hara Avenue in Old Bisbee and upon arrival officers made contact with the female caller," he stated. "McNary was transported to the Copper Queen Community Hospital where he was later pronounced deceased."
A search warrant was executed by officers at the residence. Due to the information obtained on scene, as well as information provided by Luna, officers believed that a domestic violence situation had occurred between the married couple, continued Maddux.
Luna was arrested and booked into Cochise County Detention for Second Degree Murder, a class two felony, he said.
An autopsy was to be performed Wednesday morning on McNary by the Pima County Medical Examiner's Office in Tucson to determine the exact cause of death, but no further details were available to him.
If you find a correction for this story, please contact our editorial department
That 911 call, at least she was honest.

subset: commoncrawl


text:
Recent Headlines
in Viral Videos
WATCH: Girls dive out of window in daring escape from fire
Two girls were trapped in a burning apartment, but thanks to the help of some alert neighbors they made it out alive.
in Music
Journey drummer Deen Castronovo denied bail
The troubled drummer will remain in an Oregon jail.
in Sports
Ex-Cowboys player C.J. Spillman charged with sexual assault
Spillman, who has played six seasons in the NFL, is suspected of sexual assaulting a woman at a Dallas hotel.
in Music
Rolling Stones planning career xhibition
The veteran band will display dozens of items from their past, including instruments, personal diaries, and audio and video tracks for the special project, titled "Exhibitionism."


text: Does anyone know if you have Kaiser, do you have to deliver at Zion? Can you chose a different hospital? I have heard mix things about the PP rooms. I also had a GF that deliver there and room was VERY small and she had to share with another mother. On top of that there is really is no where for father or guests. I had my daughter who is now 12 at Grossmont hospital and loved every minute of it. The PP room was wonderful.


text:
Barry Gutierrez, Associated Press
DENVER (AP) — Wilin Rosario failed to come through in the ninth. He got to come home in the 12th as a consolation prize.
He scored from second on Yorvit Torrealba's single to left and the Colorado Rockies rallied to beat the Atlanta Braves 6-5 in 12 innings on Wednesday.
"I got the opportunity to win the game and I struck out against one of the best closers we have in the National League," he said.
Rosario redeemed himself for whiffing against Craig Kimbrel when he led off the 12th with a double to left against Luis Ayala (1-1). After Cuddyer was intentionally walked, Belisle, who had to bat with no one else available on the bench, struck out on a bunt attempt.
Torrealba ripped a single to left, and Upton's throw home was wide as Rosario slid in with the winning run.
"When I got the double I said we've got it because we need one hit and I was 100 percent sure I was going to score," Rosario said.
The Rockies used all available position players and by the 11th inning Torrealba, a catcher, was playing first base. He had one assist in two innings before delivering the game-winning hit.
"Usually in winter ball I just played first, but I also played once last year when I was with the Toronto Blue Jays," he said. "Still, it's not my position so I was a little bit nervous."
Michael Cuddyer and Josh Rutledge homered for the Rockies, who ended a three-game skid behind one-hit pitching by the bullpen over the last six innings. Matt Belisle (1-1), the fourth reliever used by Colorado, pitched two perfect innings.
The Rockies rallied off Kimbrel in the ninth to deny Tim Hudson his 200th career win. Dexter Fowler hit a tying double off the wall in left with two outs. Jonathan Herrera hit a one-out double and pinch-hitter Troy Tulowitzki followed with a single before Eric Young Jr. struck out.
Hudson looked set for his milestone win after he allowed three runs on six hits in six innings, struck out three and helped out with an RBI single in the fourth.
It was 48 degrees at first pitch, more than double Tuesday's 23-degree start to the doubleheader. Sunshine bathed Coors Field in the final game of a 10-game homestand that included three postponements due to snow.
There was little evidence of the wintry weather Wednesday.
Right-hander Tyler Chatwood was recalled from Triple-A Colorado Springs before the game and made his first major league start of the season. He allowed five runs, four earned, on nine hits and struck out three in six innings.
He left trailing 5-3 after Atlanta scored twice in the fourth on Herrera's throwing error and Jordan Schafer's RBI single.
Schafer was tagged out on a failed squeeze in the ninth.
"We tried to get another run. Every run you add on is important," Braves manager Fredi Gonzalez said. "We tried to get a three-run lead. I thought we had a great combination of guys doing it, we just couldn't execute it."
The Rockies took a 2-0 lead when Cuddyer and Rutledge homered off Hudson on consecutive at-bats. It was the first time this season Colorado has hit back-to-back home runs this season.
Atlanta rallied to take the lead in the fourth. Freddie Freeman's double to right scored Upton from first, Juan Francisco singled to center to drive in Freeman and Hudson's single made it 3-2.
Chatwood answered in the bottom of the inning with an RBI single that bounced off home plate, allowing Chris Nelson to score from third.
NOTES: Atlanta OF Jason Heyward was released from the hospital Tuesday after an appendectomy Monday night. ... Colorado 1B Todd Helton (strained left forearm) was out of the lineup for the fifth straight game. The Rockies have not determined if Helton needs to go on the DL. ... The Rockies will send lefty Jorge De La Rosa (2-1) against the Diamondbacks' Trevor Cahill (0-3) in the opener of a four-game series in Arizona on Thursday. ... Paul Maholm (3-1) will start Atlanta's series opener in Detroit on Friday.
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text:
Weekend Preview: Light slate with two heavyweight battles
Dec 27, 2013, 1:00 PM EDT
GAME OF THE WEEKEND: No. 8 Villanova at No. 2 Syracuse, Sat. 2:00 p.m. (all times eastern)
Raphielle Johnson wrote about this game extensively here.
THE OTHER GAME OF THE WEEKEND: No. 6 Louisville at No. 18 Kentucky, Sat. 4:00 p.m.
I wrote 600 words on this game right here.
- Wake Forest at Xavier, Sat. 5:00 p.m.: The Skip Prosser Classic. Gregg Doyel of CBSSports.com wrote a really touching preview for this game.
- Providence at No. 23 UMass, Sat. 6:00 p.m.: Chaz Williams and Bryce Cotton are two of the nation's most entertaining guards to watch. Both the Friars and the Minutemen love uptempo basketball. Both of them score plenty of points. The Friars are coming off of a disappointing non-conference, not because of results but because of the loss of Kris Dunn (shoulder), Brandon Austin and Rodney Bullock (suspensions). UMass lost their last time out to Florida State.
- No. 25 Missouri at N.C. State, Sat. 8:00 pm.: Wanna talk about teams with something to prove? Missouri's best win at this point in the season is over UCLA at home. They lost to Illinois in the Braggin' Rights game and haven't done much else of note. The Wolfpack are in a similar situation. They've beaten Tennessee, but their resume isn't all that impressive. T.J. Warren and Jordan Clarkson are two of the best players you haven't seen yet.
- Alabama at UCLA, Sat. 10:00 p.m.: Talk about a contrast of styles. Alabama likes to muck-it-up defensively while UCLA is going to try to get out and run as much as humanly possible. Who wins out?
- UC-Irvine at Arizona State, Sat. 2:00 p.m.: Jahii Carson is always must-see TV, but the Sun Devils can struggle on nights when he's not playing his best. Irvine already has a win at Washington this season and they have a must-watch player in their own right in Mamadou N'Diaye, who stands 7-foot-6.
- UIC at Illinois, Sat. 2:00 p.m.: Kelsey Barlow is having a huge season for UIC, averaging 16.6 points, 5.2 boards and 4.5 assists. Illinois will have to slow down the former Boilermaker is they want to avoid getting upset.
1) Two of the nation's best mid-major teams, Belmont and Indiana State, will square off at 1:05 on Saturday afternoon in Terre Haute.
2) BYU will head to LMU on Saturday at 4:00 p.m. to kick off WCC play. Anthony Ireland will be fun to watch facing BYU's uptempo offense.
3) Notre Dame's first game without Jerian Grant will take place on Sunday at 5:00 p.m. when they host Billy Baron and Canisius.
- shockertalk - Dec 27, 2013 at 2:07 PM
Davidson's 6'7″ 230lb power forward, who is the Southern Conference Preseason Player of the Year, played his first game back from injury when Davidson took North Carolina to overtime.
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EACE offers members the opportunity to attend employer site visits throughout the region. This year choose from 35 site visits, including Google, Kayak, Crayola, GE, the FBI, and the American Red Cross to name a few.
Click here for more information!
5/12/2015 » 7/22/2015
Professional Exchange - Registration Open!
Learn why our members love EACE! Join us at the 2015 Annual Conference in Pittsburgh, PA from June 17-19, 2015!Find out more


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Village Voice
from Adam Mansbach – Rage is Back (Chapter 1) on Genius
I remember changing this from "newspaper pages" in an early draft, because it was a missed opportunity for specificity. What newspaper would Dondi read/use? The free arts weekly. Not the Times, which costs money. Not the Post, which he might get handed for free on the train at rush hour, because he'd think it was a trashy tabloid. Etc.
To help improve the quality of the lyrics, visit Adam Mansbach – Rage is Back (Chapter 1) and leave a suggestion at the bottom of the page


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Your little one will love cruisin' in TT Toys Spiderman 6-volt Ride On car. You'll tell your little speed-lover to slow his roll when he reaches max speed of 4 mph and carries friend-cargo of up to 66 pounds. This cool spiderman car runs on the included 6-volt battery and provides hours of real driving fun for kids ages 3 and up. Some assembly is required, and your Spidey-fan is on his way to the next battle of good versus evil.
Manufacturer 3 Years and Up
Maximum Weight Capacity: 66.14 Lb.
Maximum Speed: 4 MPH
Material: Iron, Polystyrene, Polyethylene
Dimensions: 18.5 " H x 20.47 " W x 43.31 " L
Product Weight: 28.66 Lb.
Battery: required, included, quantity: 1
Assembly Details: assembly required
other Info.
- Online Item #: 14200302
- Store Item Number (DPCI): 082-03-0444
- Item can be gift wrapped.
- Imported


text: Where is your God now? Flag By: abaraxus (More by author: Most viewed, Newest, Most Thumbs) previous next random - Fav + Fav Comment How could you...I don't even...tags what do you think? Tags: Hey dont ask me Read the following SAT test question and then dick on a button to select your answer. ... Recommend tagsx +9 Views: 981 Favorited: 0 Submitted: 04/01/2012 Share On Facebook Remove from favorites Add to favorites Unsubscribe from abaraxus Subscribe to abaraxus


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There should be zero stress when working with energy. If there is stress than something is wrong way wrong.
Try it again and let me know where your mind wonders too.
Alright.. I believe I can explain what is going on. Remember I described to you how I get pulled to all these different places/scenarios? Well.. I am constantly.. I mean literally 24/7 being pulled to these experiences. The stress I was referring to.. maybe stress was the wrong word. I don't stress. But if I don't focus on releasing my resistance to wherever I'm being pulled then a lot of tension builds in my energy/physical body. That is what makes it difficult to focus on anything else. I can focus on something else.. but at the expense of a ton of tension.
The tension has different stopping points at different times.. sometimes back of head.. sometimes chest.. sometimes lower right abdomen.. sometimes right shoulder. Usually if I focus and release resistance the energy goes somewhere. I feel the energy in my body begin to flow. Inevitably when I come back to my normal physical state the pulling builds tension again until I relax, recognize the tension is there, and begin to focus on it again.
This is exactly the same as the experiences I've had in the other realm.. where I am very present and mostly in control. The difference is I'm never able to transition over to fully perceive what's going on during the waking state. Only during my sleeping hours and when I first wake up have I been able to do that.
During the waking state I can perceive it by feelings/vibrations and visuals. The visuals can be any number of things. A lot of times I see them through what feels like another set of eyes when I close my eyes. I get the sense of movement sometimes. There are times that immediately when i close my eyes I can feel and see a very fast movement. Just like when I get pulled and I'm transitioned. I see images that are frightful sometimes. I see images that are very complex geometry sometimes. I never see them in their fullness because the vision that I'm seeing is veiled by darkness. Like I'm wearing some 90% vision blocking blindfold. There have been a few times where my vision has pierced through so to speak and I transition into what has the feel of a dream. I've yet to be able to experience that for more than a few seconds.
If I relax and don't focus my energy such as when I'm trying to go to sleep at night. A ton of random crap comes up. Voices that make no sense at all saying completely irrelevant things. Images that at times are relevant and other times make no sense at all. But usually the voices. The things that I hear literally make 0 sense to me. They are words and sentences.. but completely irrelevant to whats going on. Don't know what energy causes the random chatter.
I know that about 5% of the time during this random chatter another voice will come in. It comes through complete silence and will say my name or something that is actually relevant. It usually shocks me lol and I get knocked from the silence the few times I get there.
Not sure if this will help at all. This morning I transitioned into the other realm. The smoothest transition I've ever had. So fluid that at first I thought my normal physical body was levitating. It started with a vibration/noise that was very loud on the right side of my brain/head. Usually noises startle the hell out of me.. it did initially but I didn't allow myself to be rattle. Stayed calm and present. Lifted from my body moved a bit.. my eyes opened as if I had been sleeping over there and off I go being pulled somewhere. My alarm went off before I was able to see where I was going. When I woke up I felt the energy at the top of my head releasing to wherever it was going. Did what I could with my lack of perception to try and let the process complete.. felt like I did. Had to get up and get ready for work.
I really appreciate your assistance. It has always left something to be desired.. working with all these things and not really knowing the specifics of what's going on. It's very helpful and reassuring to hear what you have to say. Thank you very much
Your are reaching the higher octaves but you need to slow down a bit. Your physical body is not ready for it.
Most of your experiences to day have been mental but soon the more physical ones will start enforce and you need to be ready.
Damn.. you are right. My physical body could be much healthier. Out of shape and I've had this abdominal problem forever that has gotten worse and worse. The same problem led me into all of this through meditation.
I recognized about 2-3 weeks ago that literally everything I've done for as long as I can remember has been mental. It is so tough at this point to do the opposite. I feel like a baby learning to crawl. I'm working on it. Time to kick it into overdrive I suppose =]
Also, do you mean earth experience physical or physical in other dimensions?
One last question and I'll take it easy for a while lol. A couple of experiences have lead me to believe I should try lsd. I've never tried anything like this and I want to be very certain before I do. Can you see what energy suggests about this being in my best interest?
Oh yea! The valerian root is awesome. I slept so soundly last night. I never have problems falling asleep but my mental facilities run as they always do preventing deep sleep. Valerian root was like an off switch. Really good stuff.
That would be a loud NO
Stay away from that stuff.
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Whether it's removing camera shake or tracking a camera's movement, After Effects has you covered. You can apply a variety of techniques to smooth out the camera movement in a shot, using the After Effects Warp Stabilizer VFX effect, and track the camera to add objects into a scene realistically. Rich Harrington shows you how in this installment of After Effects Guru.
Hi. My name's Rich Harrington. And in this course, in the After Effects Guru series, we're going to be taking a look at two core technologies that are interrelated inside of After Effects. One is tracking cameras. essentially figuring out where the real camera was in the footage and then creating a virtual camera that we can move around. This opens up all sorts of interesting things that you can do with compositing, visual effects and even just editorial changes. Then we'll take a look at the Warp Stabilizer effect and stabilizing the clip.
Now, some of you got used to using this effect inside of Adobe Premiere Pro, but there are so many more options inside of After Effects. Hence, the effect actually got renamed to the Warp Stabilizer VFX. And this is going to allow you to do all sort of things, from compositing new elements to truly stabilizing footage, to removing rolling shutter errors caused by CMOS-type sensors. So, there's a bunch of things we're going to look at. All in all, this is a very practical course whether you work in motion graphics, visual effects, or even just editing video.
There are so many times when you're going to be called upon to improve the look of your footage and that's what this is all about. How to make things look believably composited, how to repair common production problems and how to make your footage look its best. With that in mind, let's jump in.
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|Instructor Info:
|Megan Dobro
Office Extension x5541
|TA Info:
|Isaac Marshall
Carlos Vasquez
|Meeting Info:
This course will explore the fundamental aspects of cell biology and the experiments that taught us what we know today. Students will design and perform an independent research project using tissue-culturing techniques and write a literature review.
|Course Objectives:
|Evaluation Criteria:
Course evaluations are based on attendance, punctuality and meeting deadlines, respect for peers, academic honesty, assignment quality, final projects, and participation in and preparation for class discussions. If you feel you are falling behind on material, it is important that you use the TA discussion sections and/or my office hours. You are responsible for contacting me about making up work that you have missed. I will not email you if you missed class to tell you what you missed. It is important that you work on your final projects consistently throughout the semester. A last minute final project will be evident and will result in a "no eval". On the last day of the class, you will turn in a portfolio of all of your work with the feedback, so save everything.
|Additional Info:
Choose One Textbook:
Essential Cell Biology,4th edition
Bruce Alberts, et al.
Garland Science publisher
Molecular Biology of the Cell, 5th edition
Bruce Alberts, et al.
Garland Science publisher
Additional Books:
Power, Sex, Suicide by Nick Lane
Life Ascending by Nick Lane (I will provide this as an audiobook, so you do not need to purchase this book unless you want to read along.)
Research Groups:
Tuesday 3:30-6:30 with Carlos:
Sam, Aidan, Anna, Alee, Adrienne
Wednesday after class with Megan:
Hannah, Schuyler, Jesse, Adam, Julia, Emily
Friday 1-4pm with Isaac:
Aaron, Nicole, Alex, Sophia, Wren
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0 comments by MajorMurray on Feb 24th, 2010
The reason for MajorMurray is well my Great Grandfather who servered in WWII, and when i first used it in world in conflict, I use it here and in Xboxlive (MajorMurry) I thought the neglected account I had here need liveing up so that the history of my name. I'm actully a 13 year old boy in texas, ya leave it to mom to fill out an account :(.
No one is friends with MajorMurray awww. You should invite your mates to the site, or make new ones.


text:
Los Angeles Review of Books
Golden Ages Past
Desire in a Drought
The Endocannabinoid Comes of Age
Can Jazz Musicians and Short Order Cooks Make You Less Narcissistic?
The Warm Equations
Excavating a Future
What Are Novels For?: Privilege, Race, and Shelter in Nell Zink's "Mislaid"
A Visit to the City of Dada
How Cherokee Territory Became the "Deep South"
Everything Was in the Making
Signs and Wonders
Antoine Volodine's Post-Exoticism
see all reviews »
Sheeps and Dogs: On "Far From the Madding Crowd"
Radio Hour: Part Two with Bookworm's Michael Silverblatt
The Afterlife of a Manuscript
What to Make of Heidegger in 2015?
Greening Justice: Can Disparate Actors Heed Pope Francis's Call for Unity?
True Detective, Season 2: "The Western Book of the Dead"
Between Victimhood and Power: The Female Detectives of Television's Crime Dramas
The Economics of Mad Max and Star Trek
Lies Like Truth: On Fiction, Reality, and Fictional Reality
The Melancholy Muse: Mylene Fernández Pintado on Stories, Sentinels, and Staying in Cuba
The Holy City: Charleston, A Remembrance
see all essays »
Interview with Mallory Ortberg of "The Toast"
Live Through This: A Pioneering Rock Critic Looks Back with Love and Sorrow on the 1960s
A Father's Day Interview with Jerry Stahl
"We Are a Bunch of Remittance Addicts": An Interview with Imee Marcos, Governor of Ilocos Norte, Philippines
Enigmatic Interiors: On Love, Death, Divorce, and Michael White's New "Travels in Vermeer"
The "Cosmological Nothingness" of Azareen Van der Vliet Oloomi
History, the Closet, and the LAPD
The 56th Venice Biennale Exhibition: Meet the Curator
Forever Pushing Agendas: An interview with Jessica Hopper
Writer on Fire
PODCAST #81: Sam Sweet
Life Is Governed by Intention
see all interviews »
About LARB
Book Club
Print Journal
Alice Munro
Alice Munro was born in July, 1931 in Wingham, which is in the Canadian province of Ontario. Her mother was a teacher, and her father was a fox farmer. After finishing high school, she began studying journalism and English at the University of Western Ontario, but broke off her studies when she got married in 1951. Together with her husband, she settled in Victoria, British Columbia, where the couple opened a bookstore. Munro started writing stories in her teens, but published her first book-length work in 1968, the story collection
Dance of the Happy Shades
, which received considerable attention in Canada. She had begun publishing in various magazines from the beginning of the 1950's. In 1971 she published a collection of stories entitled
Lives of Girls and Women
, which critics have described as a
. Munro is primarily known for her short stories and has published many collections over the years. Her works include
Who Do You Think You Are
? (1978),
The Moons of Jupiter
The View from Castle Rock
(2006) and
Too Much
(2009). The collection
Hateship, Friendship, Courtship, Loveship, Marriage
(2001) became the basis of the film
Away from Her
from 2006, directed by Sarah Polley. Her most recent collection is
Dear Life
(2012). Alice Munro currently resides in Clinton, near her childhood home in southwestern Ontario.
Lives of Girls and Women
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text:
Domke Announces New Rugged Bags and Gear
Pre-PMA@CES NewsRead More
F-3X RuggedWear Super Compact Bag...
Like your favorite pair of jeans, Domke bags get better with age and with the new Domke RuggedWear collection you don't have to wait. The fabric produces a unique distressed and weathered look right from the start.
The RuggedWear classic bags feature high-quality, weather-tough, durable cottoncanvas that is treated with special non-solvent, environmentally friendly waxes to afford the fabric a lifelong resistance to inclement weather.
The special formula allows the fabric to breathe while the waxes produce a unique, timeless,weathered, distressed patina finish. By using the included refinishing wax, bagscan be restored to its original finish quickly and easily.
Resized to fit today's digital SLR's, but still deceptively compact, the Domke F- 3X is the bag to grab when the assignment doesn't call for dozens of pieces of equipment. No space wasted, because the inside and outside dimensions are nearly identical. The result is a very inconspicuous camera bag that carries a surprising amount of gear.
Includes removable, padded partition wall, adjustable non-slip Gripper Strap with durable cotton webbing, removable hand carrying strap, YKK zippers, and steel snap hook. Ideal For: 1 Pro SLR, 2-3 lenses, pro flash and accessories.
The Domke F-3X is commonly used for Daily usage and more.The Domke F-3X is most used by customers who consider themselves to be a Photo enthusiast, Semi-pro photographer among others.The Domke F-3X is popular because customers like the following qualities of the Domke F-3X: Comfortable, Easily accessible equipment, Lightweight, Strong construction and Well padded
Most Liked Positive Review
Great bag!
the bag easily fits a 40d witha large zoom lens the lens seprators can hold a EF 70-200 f/2.8L IS USM lens snugly. the bag can just just hold more gear then you can imagine a bag this size holding. the flaps are awkward for completely covering the side pockets. the bag is very water resistant i rode my bike in the rain with this back water spraying all over the bag from the back tire and all the camera gear was perfectly dry
Reviewed by 19 customers
Before i went digital, back in the day, i used a domke bag for both my 4 x 5 Linhof and another for my 35mm. The bags i've been using recently have finely driven me crazy. Yes, they are fancy with space-age materials but in the long run they are travel bags, not working photographers bags. I finally returned to the simplicity of the working mans bag, the domke. It takes a beating, it protect my gear and keeps it ready to use. It doesn't look too flashy and actually that is great for the places i go. If you are serious about shooting efficiently and hassle-free, it's domke or nothing.
I am amazed at how much gear I can carry in this bag. the layout and number of pockets suit me perfectly. I also have the bigger Domke F2, but this one usually is plenty. Be aware there is no padding, so if you slam your bag around this might not be the one for you. On the other hand, less padding means more room in a smaller bag, and that's the reason I bought it. The quality/ruggedness is very impressive. I've had mine for years, but shows no sign of wearing out. I'm sure I'll be using it for a long time to come.
used for overseas travel
Great fit to your form - not one of those boxy bags that gets in the way. Fits a lot of gear for it's size.
I've been using Domke bags since the early 80's. Nothing beats them as long as you stick with the canvas versions. This bag is the perfect size for my D700 and Fuji X100 with a couple of lenses. Domke bags excel at keeping your gear easily available while your shooting. Designed by a pro for pros. On a side note, I have an original Domke F2 that I've used at least a few times a week for 29 years. And it's still going strong.
My first Domke bag wore out after 30 years and I really wanted the exact same bag. This was as close as it came and it is even better (though I didn't want to admit it) than the first one. Easy to access, padded well, lightweight, and completely unassuming, all the things I love. I don't want to go into a crowd looking like I am carrying expensive equipment, so this bag is perfect becuase it is good looking but not so much like a fancy camera bag. Domke did it again but even better! And it seems this one might last even longer it is built so well!
it does hold more than you might think but still i wish that i had chosen the nest size larger
First off - THANK YOU Adorama! you guys are FAST! I just got this bag and I did think it would be a bit bigger, but it's perfect for my Panasonic GF1 and two lens + a few other odds and ends... It doesn't look too much like a camera bag either, which I LOVE and it's very casual and "outdoorsy" - another + for me! I did think it was a bit pricey , but well worth it for the construction and functions!
This is a great day bag. This bag is built for speed; no armor on the sides or the top. It is a good looking bag but if you don,t like good looking, put some duct tape on it and be a pro.
I use it for street photography in Mexico City. The bag is not flashy and provides easy access to my D200 and two other lenses with space to spare for my BlackBerry, iPod Touch, Canon G9, Rocket Blower, and an SB600 speed flash.
Pre-PMA@CES NewsRead More


text:
|The most helpful favorable review
|The most helpful critical review
0 of 0 people found the following review helpful:
By Shingletom from USA on 2013-08-10 18:01:10Things I liked:The M4-177 shoots like the good old Crosman 760 but, more accurate, quicker sight acquisition. The Black Tac Combo kit is a great deal for the money. I like the carry handle/rear sight & front sight which are fairly accurate but, the UTC 30mm scope makes the rifle very accurate, 3 shots in the bull @ 30 ft. Smaller group than a dime.
Things I would have changed:Pistol grip has some excess plastic from the molding process that, needs to be shaved off to make holding the grip more comfortable. I used a single edge razor blade and cleaned /shaved off excess plastic. Grip feels good now and did Not hurt the looks of the rifle.
What others should know:Buy two, 4 packs of Crosman pellet magazines to save time. The rifle comes w/ 3 magazines. You can never have enough loaded magazines.
0 of 0 people found the following review helpful:
By CB from USA on 2014-12-17 20:33:37Things I liked:Rifled barrel for shooting pellets.
Things I would have changed:Adjustable front sight.
What others should know:The description states tool included for front sight adjustment. There was no tool included for this & after further inspection, I noticed front sight has no adjustment. In fact, the front sight pin is molded to sight & is not adjustable. The carry handle also was defective & mounts crooked to rail. Also the sight on handle has not been drilled properly as both holes are same size & not counter sunk as on the others I've purchased. The UTG red dot sight was not shipped to me either, but I'm working w/ PA about this. I've purchased several Crosman airguns over course of my life & this is the first time their gun has fallen short of quality as advertised.
CheckoutSubtotal (USD):
does not include shipping and tax


text:
Regime and rebel forces evacuate besieged Syrian civilians in rare moment of cooperation
1,800 civilians were able to flee a beseiged suburb of Damascus Tuesday due to a rare moment of cooperation and coordination between Syrian government and rebel forces, according to Reuters.
The Syrian Arab Red Crescent and related civil society groups helped the almost 2,000 civilians flee the besieged town of Moudamiya, but thousands remained trapped in the area will little to no food, water and medicine.
One of the residents who was evacuated told Reuters, "I was living in terror and now I am free and safe with the army, thank God. There [was] no food or water. We got out with a new spirit now.".
Regime forces have sieged rebel-controlled towns, like Mouadamiya, in an effort to force the opposition groups out of the areas. However, the sieges have left civilians in the towns in dire humanitarian conditions, with many dying from treatable illnesses and starvation due to lack of food and access to medical services.
Powerful international actors have called on Syrian authorities to allow open humanitarian routes and access to the besieged towns, but relief agencies have largely reported that they have still not been granted such access.
This is the third evacuated from Moudamiya. Opposition forces say that 12,000 people are still starving in the sieged area and UN reports suggest that 3,000 women and children have already successfully left the town.


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You can now invite anyone to meet at your favorite Starbucks.
Limited-time feature
36 year old woman | Sacramento, CA, USA | Seeking men 29-43 in California, United States
Active within 2 weeks
Hello, I consider myself a pretty, slender, loyal, honest, loving, sweet, easy going woman and with good sense of humor.
I like to enjoy and make the best of whatever situation. I am open to fresh experiences and discovering places. I really enjoy being out in nature. Hiking, cooking and gardening are some of my favorite hobbies. I am not looking to casually date. I would like to find a gentleman with good values. Someone who would like to be married someday when he meets the right woman and raise a wonderful family. A man who does not take himself too seriously, can be silly and makes me laugh and truly appreciates the value of a good lady. I am not perfect by any means but I do have a lot to offer to the right person.
Dining out , Movies/Videos , Music and concerts , Exploring new areas , Travel/Sightseeing , Wine tasting
Aerobics, Dancing, Swimming, Walking / Hiking, Yoga
I exercise 3-4 times per week.
Don't display my sign
I like Birds, Dogs, Fish, Horses
Middle of the Road
Santa Barbara
Favorite TV show "Friends".
Like hiking, dancing, road trips, outdoor events,
Z{{Cta}} {{#if HasMoreInfo}} ?{{CtaSecondary}} {{/if}}
|What she is looking for
|5'3" (160cms)
|5'7" (170cms) to 6'2" (187cms)
|Body type:
|No preference
|Black, Blue, Brown, Grey, Green, Hazel
|Light brown
|Light brown
|No Way
|No preference
|Social Drinker
|Social Drinker
|Administrative / Secretarial
|Administrative / Secretarial, Labor / Construction, Medical / Dental / Veterinary / Fitness, Political / Govt / Civil Service / Military, Retail / Food services, Sales / Marketing, Self-Employed / Entrepreneur, Education / Teacher / Professor, Technical / Science / Computers / Engineering, Travel / Hospitality / Transportation, Other profession, Nonprofit / Volunteer / Activist, Law enforcement / Security / Military, Architecture / Interior design
|I'll tell you later
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|Have kids:
|Yes, and they sometimes live at home, No, Yes, and they live away from home, Yes, and they live at home
|Wants kids:
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|Latino / Hispanic, Middle Eastern, Native American, Pacific Islander, White / Caucasian
I was born and raised in Mexico.
|Christian / Catholic
|Agnostic, Christian / Catholic, Christian / LDS, Christian / Protestant, Spiritual but not religious, Other, Christian / Other
|English, Spanish
|Some college
|High school, Some college, Associates degree, Bachelors degree, Graduate degree, PhD / Post Doctoral


text:
Why is The Spirit rated PG-13?
Official MPAA Rating: The Spirit is rated PG-13 for for intense sequences of stylized violence and action, some sexual content and brief nudity.
With two immortal characters battling it out from beginning to end, violence without any consequence is a continuous concern. Gunfights, stabbings (with characters seen with bloody knives and swords sticking out of their bodies), and a decapitation are just some of the examples. A huge battle has two men shot repeatedly, with one literally being blown to bits. Sexual banter is heard. The main character is known for his womanizing ways and reputation of having had sexual relations with various females. A woman is seen completely naked from the rear. Frequent moderate and mild profanities are heard, along with terms of deity. Cigarette smoking is glamorized.


text: We decided to give this restaurant a try when our two regulars on a Saturday were packed full. We should ran when we walked in and the place was empty. We had one person with our party of 7 that needed something gluten free, their were no options on the menu. The special most of us had included a... read more


text:
Out of Stock
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With Our "Find This For Me" Service we notify you via email once we have stock!
Piece Code: SLD2PS
Piece Name: 2 Piece Salad Serving Spoons Set
Size: 11 in
© 2015 Replacements, Ltd. All rights reserved
Piece Code: SSSPL
Piece Name: Left Salad Serving Spoon, Solid
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text:
Grill Myrtle Beach
(>197) for Grill in Myrtle Beach
Dayton House Resort2400 North Ocean Blvd29577 Myrtle Beach(843) 448-2441
... features complimentary wireless internet, indoor and outdoor pools, Yella Umbrella pool bar and grill, spas and lazy river, game room, ATM, fitness center and a guest laundry facility. Restaurant...
Thorny's Steakhouse600 S Kings Hwy29577 Myrtle Beach(843) 448-2333Closed
... Grill Restaurants, Weddings, Myrtle Beach South Carolina Steakhouse, Restaurant in Myrtle Beach SC,...
Request for Quotation
Are you looking for Household Appliances ?Use our "Request for Quotation" service to get customized offers from companies in Myrtle Beach, tailored for your exact needs!
Bowery118 9Th Avenue North29577 Myrtle Beach(843) 448-5832Closed
The Myrtle Beach bar, The Bowery, is home to country music supergroup Alabama. The Myrtle Beach bar provides the best in Myrtle Beach nightlife and live music
Bonefish Grill7401 North Kings Highway29572 Myrtle Beach(843) 497-5294Closed
... Grill Restaurants, Bar Restaurants, Grills, Restaurant Cuisines, Seafood Restaurants, Food,...
Charley's Grilled Subs2000 Coastal Grand Cir # 429577 Myrtle Beach(843) 448-2096Closed
Charley's Grilled Subs are freshly prepared with quality ingredients and grilled right in front of you ... Shops, Fresh Subs, Restaurant Cuisines, Grill Restaurants, Bar Restaurants, Grills, Fresh Grilled,...
Cat Island Bar & Grill2272 Glenns Bay Road29575 Myrtle Beach(843) 650-3157Closed
Island Bar and Grill - Pawleys Island, SC Best Bar on the Grand Strand. Please dont be confused as we are a full service restaurant and bar located in the Village Shops. We also offer live music.
Handleys Pub & Grub3873 Renee Dr29579 Myrtle Beach(843) 903-4904Closed
... Barbecue, Bar Restaurants, Bars, Grill Restaurants, Bar Grill Restaurants, bar, Pub Restaurants,...
Bodos German Restaurant & Pub407 8Th Ave N29577 Myrtle Beach(843) 448-1310Closed
... Restaurants, Bar Grill Restaurants, Brew Pubs, Restaurant Cuisines, Club, Grill Restaurants, pub,...
Hooters Of South Myrtle Beach3901 North Kings Highway29577 Myrtle Beach843-626-3467Closed
Are you looking for a restaurant to enjoy tasty food in a friendly environment with your family or friends? You should visit Hooters. The restaurant offers products such as: salads, soups, appetizers...
Hooters Of Myrtle Beach10133 North Kings Highway29572 Myrtle Beach843-272-3739Closed
Are you looking for a restaurant to enjoy tasty food in a friendly environment with your family or friends? You should visit Hooters. The restaurant offers products such as: salads, soups, appetizers...
Key West Grill1214 Celebrity Cir29577 Myrtle Beach(843) 444-3663
..., Restaurants, Barbecue, Grill Restaurants, Grills, Bars, Restaurant Cuisines, Bar Grill Restaurants
Ocean Front Grill100 9Th Ave N29577 Myrtle Beach(843) 448-5142
... Grill Restaurants, Restaurant Cuisines, Grill Restaurants, Seafood Restaurants, Barbecue, Grills...
Broadway Louies1318 Celebrity Circle29577 Myrtle Beach(843) 445-6885
... CLUB, ENTERTAINMENT, Orchestras, Games, SPORTS, BAR, Sporting Events, ART, Live Music, Restaurant...
Giant Crab9597 North Kings Hwy29572 Myrtle Beach(843) 449-1097
One of the best things about a trip to Myrtle Beach is the abundance of tasty seafood. Nowhere in Myrtle Beach will you find more abundance or tastier seafood than Giant Crab Seafood Restaurant. Our...
Comedy Cabana9588 North Kings Highway29572 Myrtle Beach(843) 449-4242
... Adult Entertainment Comedy Dance Clubs, Comedy Clubs, Performing Arts, Live Theater, Art, Adult...
Blarney Stones Irish Pub & Cigar Martini Bar1318 Celebrity Cir # Cs429577 Myrtle Beach(843) 626-6644
... Pubs, Lounges, Irish Restaurants, Club, Nightclubs, Bars, Restaurant, Art, Entertainment
2001 Night ClubHighway 17 North29572 Myrtle Beach(843) 449-9434
... Entertainment, Clubs, Pub, Nightclub, Art, Bar
Aspen Grill2501 North Kings Highway29577 Myrtle Beach(843) 449-9191
..., Steak Restaurants, Chop Restaurants, Bar Grill Restaurants, Bar Restaurants, Grill Restaurants
Mister Fish Seafood Grill919 Broadway St29577 Myrtle Beach(843) 946-6869
..., Bar Restaurants, Pubs, Seafood Restaurants, Grills, Restaurant Cuisines, Bars, Grill Restaurants
Eleventh Hour Bar and Grill709 N Ocean Blvd29577 Myrtle Beach(843) 712-2611
... Grills, Restaurants, club, Pubs, Bar Restaurants, Restaurant Cuisines, Food, Grill Restaurants, bar
Nagano Japanese Grill4544 Socastee Boulevard29588 Myrtle Beach(843) 293-4544
... Pubs, Grill Restaurants, Grills, Bars, Sushi Restaurants, Grills Pubs, Bar Grill Restaurants,...
Madisons Bar & Grill2002 North Kings Hwy29577 Myrtle Beach(843) 444-0132
... Bars, Bar Grill Restaurants, Restaurants, Restaurant
Remedies Bar & Grill4803 Highway 17 Bypass South29577 Myrtle Beach(843) 293-4833
... Clubs, Bar Grill Restaurants, Club, Nightlife, Bars, Restaurant, Restaurants
Jay Bos Pizza & Grill2005 North Ocean Boulevard29577 Myrtle Beach(843) 626-2552
... Pubs, Grill Restaurants, Pizza, Restaurant Cuisines, Bars, Grills Pubs, Bar Grill Restaurants,...
Back Deck Bar & Grill The407 Yaupon Cir29577 Myrtle Beach(843) 626-8816
... Bar Grill Restaurants, Grills, Grills Pubs, Restaurant Cuisines, Bar Restaurants, Pubs, Grill...
Boathouse Waterway Bar & Grill201 Hard Rock Pkwy29579 Myrtle Beach(843) 903-2628
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Dog House Bar & Grill607 South Kings Highway29577 Myrtle Beach(843) 448-2663
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Wagon Wheel Bar & Grill1665 Racepath Street29577 Myrtle Beach(843) 916-8630
... Clubs, Nightlife, Bar & Grill Restaurants, Nightclub, Club, Restaurant, Nightclubs
Dirty Dons Oyster Bar/Grill I408 21St Ave N29577 Myrtle Beach(843) 448-4881
... Grill Restaurants, Southern Style Restaurants, Seafood Restaurants, Restaurant Cuisines, Bar...
Village Bar & Grill3901 North Kings Highway29577 Myrtle Beach(843) 444-9092
... Pubs, Nightlife, Club, Bars, Clubs, Restaurants, Pub
Parrot Bar & Grill1005 Withers Drive29577 Myrtle Beach(843) 626-9486
... bar, Restaurants, club, pub, Bars, Nightclub
Michaels Bar & Grill709 North Ocean Blvd29577 Myrtle Beach(843) 448-0654
... Nightclubs, Nightlife, Nightclub, Clubs, Club, Restaurants
Rodz and Rolls Bar & Grill503 8Th Ave N29577 Myrtle Beach(843) 916-4444
... Tavern, Club, Nightlife, Pub, Taverns, Clubs, Bars, Pubs
Shamrocks Sports Bar & Grill2510 North Kings Highway29577 Myrtle Beach(843) 448-2532
... Bars, Pub, Pubs, Nightlife, Club, Sport Bars, Clubs, Restaurants
Boardwalk Bills Bar & Grill910 North Ocean Boulevard29577 Myrtle Beach(843) 448-5765
... Restaurant, bar, pub, Food
Dee Big Dawgs Bar & Grill4803 Highway 17 Bypass South29577 Myrtle Beach(843) 293-3733
... Grill Restaurants, Pub, Cocktail Lounges, Restaurants,...
Heads Up Tails Down Sports Bar & Grill4735 South Kings Highway29575 Myrtle Beach(843) 828-4180
... Sport Bars, Club, Bars, Restaurant, Food, pub, bar, Bar Grill Restaurants
Dog House Raw Bar & Grill-North9814 North Kings Highway29572 Myrtle Beach(843) 692-9663
... pub, Restaurants, Bars, bar, Club, Food
Sun Up Sports Pub & Grill4520 Socastee Blvd29588 Myrtle Beach Horry843 293 1499
... Eating Places, Eating Drinking, Drinking Places
St Clements Beach Bar & Grill202 70Th Avenue North29572 Myrtle Beach(843) 449-1112
... Club, Pubs, Clubs, Bars, Bar, Nightlife, Pub
Howard b Fishers Grill & Raw Bar1902 North Kings Highway29577 Myrtle Beach(843) 626-6889
... Family Restaurants, Restaurant, Lunch Restaurants, Restaurant, Oyster Bars, Bar, Raw Bar...
Martis510 North Kings Hwy29577 Myrtle Beach(843) 626-9058
... Bar Grill Restaurants, Restaurant, Bars
Drifters Saloon2903 N Kings Hwy29577 Myrtle Beach(843) 626-4464
... Grill Restaurants, Bar Grill Restaurants, Bars, Restaurant Cuisines, Food, Pubs, Restaurants, Bar...
Murphys Law Sports & Raw Bar405 South Kings Highway29577 Myrtle Beach(843) 448-6021
... Restaurants, Grills Pubs, Bars, Restaurant Cuisines, Bar Grill Restaurants, Grill Restaurants, bar
Margarita Ville2501 North Kings Hwy29577 Myrtle Beach(843) 448-5455
... Bar & Grill Restaurants, Restaurant
Fosters Cafe & Bar6307A North Kings Highway29572 Myrtle Beach(843) 449-7945
..., Restaurant Cuisines, Cafeteria Restaurants, Restaurants, Grill Restaurants, Cafes, Bars
Margaritas Mexican Restaurant9906 North Kings Hwy29572 Myrtle Beach(843) 497-5960
... Grill Restaurants, Mexican Restaurants, Grills Pubs, Cocktail Lounges, Pubs, Restaurants, Steak...
City Bar7604 N Kings Hwy29572 Myrtle Beach(843) 449-7013
... Restaurants, Bars, Restaurant Cuisines, Pubs, Grill Restaurants, Grills, Reservations Accepted,...
Droopy's5201 N Kings Hwy29577 Myrtle Beach(843) 449-2620
... Bar Restaurants, Pubs, Grills, Grill Restaurants, Food, Bars, Restaurants, Restaurant Cuisines
Buddha Lounge & Grille1715 N Kings Hwy29577 Myrtle Beach(843) 626-5541
... Grill Restaurants, pub, Japanese Restaurants, Bar Restaurants, bar, Grills, Restaurants, Cocktail...
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text:
In one embodiment, a compound semiconductor vertical FET device (11) includes a first trench (29) formed in a body of semiconductor material (13), and a second trench (34) formed within the first trench (29) to define a channel region (61). A doped gate region (59) is then formed on the sidewalls and the bottom surface of the second trench (34). Source regions (26) are formed on opposite sides of the double trench structure (28). Localized gate contact regions (79) couple individual doped gate regions (59) together. Contacts (84, 85, 87) are then formed to the localized gate contact regions (79), the source regions (26), and an opposing surface (21) of the body of semiconductor material (13). The structure provides a compound semiconductor vertical FET device (11, 41, 711, 712, 811, 812) having enhanced blocking capability and improved switching performance.
1. A vertical FET device comprising:
a body of semiconductor material comprising a first conductivity type, wherein the body of semiconductor material has an upper surface and a lower surface opposing the upper surface, wherein the lower surface provides a drain contact;
a first trench formed in the body of semiconductor material and extending from the upper surface, wherein the first trench has a first width, a first depth from the upper surface, first sidewalls, and a first bottom surface;
a second trench formed within the first trench, wherein the second trench has a second width, a second depth from the first surface, second sidewalls and a second bottom surface, wherein the first and second trenches form a first trench structure;
a first source region formed in the body of semiconductor material extending from the upper surface and spaced apart from the first trench; and
a first doped gate region formed in at least a portion of the second sidewalls and the second bottom surface, wherein the doped gate region comprises a second conductivity type, and wherein the first doped gate region extends into the body of semiconductor material.
2. The device of
3. The device of
4. The device of
a first passivation layer formed over the doped gate region; and
a planarized passivation layer formed over the first passivation layer.
5. The device of
6. The device of
7. The device of
8. The device of
9. The device of
a second trench structure formed in the body of semiconductor material;
a second source region formed in the body of semiconductor material extending from the upper surface and spaced apart from the second trench structure;
a second doped gate region formed in the second trench structure;
a first source contact region coupled to the first source region;
a second source contact region electrically isolated from the first source contact region and coupled to the second source region;
a common drain region formed in the body of semiconductor material; and
a gate contact region coupled to the first and second doped gate regions.
10. A compound semiconductor vertical FET device comprising:
a first groove formed in a compound semiconductor layer of a first conductivity type, wherein the first groove has first sidewalls and a first lower surface, and wherein the first groove extends from a first surface of the compound semiconductor layer;
a second groove formed within the first groove, wherein the second groove has second sidewalls and a second lower surface;
a doped gate region formed in the second lower surface and at least a portion of the second sidewalls and extending into the compound semiconductor layer, wherein the doped gate region comprises a second conductivity type;
a first source region of the first conductivity type formed in the compound semiconductor layer adjacent to the first groove;
a source contact coupled to the first source region;
a gate contact coupled to the doped gate region; and
a drain contact formed on a second surface of the compound semiconductor layer.
11. The device of
12. The device of
13. The device of
This application is related to co-pending U.S. patent application Ser. No. 10/623,390, entitled "DC/DC CONVERTER WITH DEPLETION MODE COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR SWITCHING DEVICE", by Peyman Hadizad, assigned to the same assignee, Semiconductor Components Industries, LLC, filed concurrently herewith, and which is incorporated by reference for purposes.
This application is further related to co-pending U.S. patent application Ser. No. 10/623,392, entitled "METHOD OF MAKING A VERTICAL COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR DEVICE", by Peyman Hadizad, assigned to the same assignee, Semiconductor Components Industries, LLC, filed concurrently herewith, and which is incorporated by reference for all purposes.
This invention relates generally to high frequency power semiconductors, and more specifically to compound semiconductor field effect transistor (FET) structures and applications thereof.
In the area of computer and peripheral power supply applications, there are several factors driving future performance and demand. Such factors include an increase in output power requirements because of higher microprocessor speeds, smaller system size (i.e., reduced circuit board space), lower cost, improved transient response, and lower output voltage ripple (i.e., lower microprocessor operating voltages). Additionally; advancing microprocessor needs, which include decreasing operating voltage and increasing current requirements, will require power conversion devices and circuits that enable highly efficient and tightly regulated power. These devices and circuits must operate at higher frequencies and exhibit enhanced thermal characteristics.
Electronic systems such as computer and peripheral power supply applications often require that multiple dc voltage levels be produced from a single dc voltage source. This conversion is done with electronic circuits such as dc/dc converters. A basic converter circuit is a two-port network having a pair of input terminals and a pair of output terminals. A dc power source is coupled across the two input terminals, and a dc load is coupled across the two output terminals. Within the two-port network, the circuit typically comprises multiple switching devices, appropriate control circuitry, one or more capacitors, and one or more inductors. Typical dc/dc converters include the buck converter, the boost converter, and the buck-boost converter.
An ideal switching device has two states: on and off. In the on state, the ideal device conducts current between two terminals with zero voltage drop across the terminals. In the off state, the ideal device will support any voltage drop across the terminals while conducting zero current between them. A number of different semiconductor devices are used as switches in dc/dc converters, all of which depart from the ideal switching device in one or more ways. Examples of such devices include diodes, bipolar transistors, MOSFETs, silicon controlled rectifiers, and junction field effect transistors.
One problem with typical switching devices is a non-zero voltage between the terminals when in the on state. This results in power dissipation in the switching device, which generates heat and reduces overall circuit efficiency. A second problem involves the dynamic characteristics of the switching device when transitioning between the on state and the off state. Slow switching speeds place a limit on system operating frequency and duty cycle. Each time a device switches between states, a certain amount of energy is lost. The slower a device switches, the greater the energy lost in the circuit. This has significant impact on high frequency and/or high power applications, and contributes significantly to the reduction of overall efficiency of a dc/dc converter.
Most losses in switching power circuits are determined by the physical properties of semiconductor devices. Although silicon based MOSFET devices are a primary choice for many power conversion applications, they have inherent limitations for high frequency applications due to their physical structure. Such limitations include high reverse recovery charge, high gate charge, and high on resistance, which detrimentally impact power dissipation and thermal response characteristics.
Multi-phase dc/dc conversion is a preferred technique for addressing the high current/low operating voltage requirements of present and future microprocessors. In multiphase dc/dc converter architectures, a load is distributed evenly across phase-shifted pulse-width-modulation (PWM) channels and associated switching devices and inductors. This approach spreads power and current dissipation across several power handling devices thereby lowering stress on components. This approach also reduces output ripple on inductor current.
By way of example, a typical silicon-based multi-phase dc/dc converter for a 120 Amp, 500 kHz microprocessor system consists of four phases. A silicon-based multi-phase dc/dc converter for 1 MHz/120 Amp microprocessor system may consist of five phases, and a silicon-based multi-phase dc/dc converter for a 2 MHz/120 Amp system may consist of seven phases.
In multi-phase dc/dc converters, current levels are often sensed in each phase as a means of feedback control within a system. This is done typically using on-resistance of a silicon switching MOSFET device or series resistance of an output inductor. The on-resistance method current sensing is problematic due to variations in processing for silicon MOSFETs devices, which becomes even more of a problem at higher current levels. Additionally, with improvements in inductor designs and fabrication methods, the series resistance current sensing technique has become less reliable because the improvements make it difficult to distinguish the inductor resistance from system noise.
Accordingly, a need exists for switching devices suitable for the increasingly stringent demands of applications such as dc power conversion. Additionally, it would beneficial for such devices to make possible accurate phase current sensing.
FIG. 1 illustrates, an enlarged cross-sectional view of a portion of a vertical FET device according to the present invention;
FIG. 2 illustrates a partial top plan view of a gate control structure for device of FIG. 1;
FIG. 3 illustrates an enlarged cross-sectional view of a portion of an edge termination structure for the device of FIG. 1;
FIG. 4 illustrates a circuit diagram including the device of FIG. 1 together with a sense FET device according to the present invention;
FIG. 5 illustrates a simplified top plan view of embodiment of FIG. 4; and
FIG. 6 illustrates an enlarged cross-sectional view of a portion of the embodiment of FIG. 4.
In general, the present invention pertains to a vertical compound semiconductor junction field effect transistor (JFET) structure. In a preferred embodiment, a first trench is formed in an upper surface of an n-type conductivity compound semiconductor layer, and a second trench is formed within the first trench to form a gate region. The gate region is then doped by ion implanting a p-type dopant species such as Be+ into the lower sidewalls and bottom surface of the second trench. N-type source regions are formed on both sides of the double trench gate region. The opposite surface of the n-type conductivity compound semiconductor layer provides a drain region. The doped gate region extends along the channel region and is separated from the source regions to provide, among other things, an improved gate blocking characteristic. A gate-coupling region is used to connect a plurality of closely spaced doped gate regions. In a preferred embodiment, the structure comprises an n-channel depletion mode GaAs FET.
Unlike silicon, GaAs is a direct bandgap compound semiconductor material with an inherent property of high electron mobility (8500 cm2/V-sec), which is greater than 4� that of silicon (1500 cm2/V-sec). Also, GaAs has a larger bandgap of 1.42 eV compared to 1.1 eV for silicon, which provides, among other things, enhanced performance at elevated temperatures. Additionally, the reverse recovery charge of a GaAs FET device is approximately 100� lower than that of a silicon FET device. The double trench gate design according to the present invention together with a compound semiconductor material provides a vertical FET structure with improved switching and on resistance characteristics compared to silicon switching devices.
The present invention is better understood by referring to FIGS. 1-6 together with the following detailed description. For ease of understanding, like elements or regions are labeled the same throughout the detailed description and FIGURES where appropriate. Although the embodiment shown and described is a depletion mode n-channel FET device, the structure according to the present invention is suitable for p-channel and enhancement mode devices as well.
FIG. 1 shows an enlarged cross-sectional view of a vertical FET device or compound semiconductor vertical FET or JFET structure 11. Structure 11 comprises a body of semiconductor material 13, which preferably includes a starting or supporting substrate or wafer 14 having an upper surface 16. An epitaxial or drift layer or layers 17 is formed on upper surface 16. Body of semiconductor material 13 includes an upper or source surface 19 and a lower or opposing surface 21. Preferably, body of semiconductor material 13 comprises a compound semiconductor such as GaAs, InP or the like. Although only a portion of a FET device or cell is shown, structure 11 comprises a plurality of individual vertical FET devices or cells connected in parallel. Structure 11 forms, for example, a power switching FET or a sense FET.
In a preferred embodiment for an n-channel depletion mode (i.e., normally on) device, substrate 14 comprises n-type GaAs, and layer 17 comprises an n-type GaAs epitaxial layer, which preferably has a lower dopant concentration than substrate 14. The thickness and dopant concentration of layer 17 varies as a function of the desired device characteristics. Preferably, for a depletion mode FET device, layer 17 has a dopant concentration on the order of less than 5�1017 atoms/cm3 and a thickness greater than about 0.1 microns. Layer 17 is formed using conventional compound semiconductor epitaxial growth methods. The dopant profile of layer 17 is substantially constant, or the profile is graded depending on desired device characteristics. Alternatively, body of semiconductor material 13 comprises InP.
Source regions 26 are formed in and extend from upper surface 19. When layer 17 comprises an n type material, source regions 26 comprise n+ regions and preferably are formed using ion implantation techniques. For example, source regions 26 are formed using Si+ implantation at a dose sufficient to lower contact resistance to subsequently formed contact layers. For example, a Si+ dose of about 4.0�1013 atoms/cm2 with an implant energy on the order of 85 KeV being typical. Alternatively, selenium, tin, or tellurium is used to form source regions 26. In an alternative embodiment, multiple source implants at different implant doses and implant energies are used.
Structure 11 further includes a double trench gate, double groove gate, multiple trench gate, trench within a trench gate, or stepped trench gate structure 28 formed in and extending from upper surface 19 into layer 17. Preferably, trench structure 28 includes a first trench or groove portion 29 having a width 31 in a range from about 0.3 microns to about 1.5 microns, and a depth 32 in a range from about 0.5 microns to about 5 microns.
Trench structure 28 further includes a second trench or groove portion 34 having a width 36 in a range from about 0.25 microns to about 1.4 microns, and a depth 37 in a range from about 0.5 microns to about 5 microns. Preferably, the pitch or centerline-to-centerline distance 41 of adjacent trench gate structures 28 is in a range from about 1.3 to about 4.5 microns. These dimensions are variable according to specific device requirements. That portion of layer 17 between gate structures 28 forms channels or channel regions 61.
Structure 11 also includes doped gate regions 59, which preferably extend along sidewalls and lower surfaces of second trenches 34. For an n-channel device, doped gate regions 59 are p-type, and are formed preferably using angled ion implantation. Preferably, gate regions 59 and source regions 26 are activated using rapid thermal processing with a temperature up to about 900� C. for about 10 to 30 seconds being sufficient.
Trench structures 28 preferably are formed using reactive ion etching (RIE) or damage free electron cyclotron resonance (ECR) etching, which provides clean and straight sidewall features. A chlorine-based etch chemistry is preferred. In a preferred embodiment, second trench 34 is formed using spacers formed on the sidewalls of first trench 29, which are subsequently removed.
A dielectric or passivation layer 63 is formed over upper surface 19 including trench structures 28. Preferably, passivation layer 63 comprises a silicon nitride with a thickness in a range from about 0.05 microns to about 0.3 microns. Preferably, plasma enhanced chemical vapor deposition (PECVD) is used to form passivation layer 63. A dielectric layer is then formed over passivation layer 63, and planarized to form a trench-fill layer 66. Trench-fill layer 66 provides for, among other things, better step coverage for subsequently formed conductive layers, and preferably comprises a low temperature oxide, silicon nitride, or a spin on dielectric. Trench-fill layer 66 is formed using etch-back or chemical mechanical planarization (CMP) techniques.
Openings are then formed in dielectric layer 63 to provide contacts to source regions 26. Additionally, portions of trench-fill layer 66 and passivation layer 63 are removed to expose portions of a gate connecting region 79 (shown in FIG 2). A first metal or contact layer is formed over upper surface 19, and patterned to provide a source contact 84 and a gate contact 86 (shown in FIG. 2). Source contact layer 84 and gate contact layer 86 preferably comprise NiGeAu, NiGeW, or another suitable metal. A second contact layer or metal layer 87 is formed over source contact 84 and gate contact 86. Second metal layer 87 preferably comprises nickel or gold, and is formed using electroplating or electroless plating techniques. Body of semiconductor material 13 is thinned using a backgrind step, and a back metal or drain contact layer 88 is deposited on lower surface 21. Drain contact layer 88 comprises NiGeAu, or another suitable metal.
FIG. 2 shows an enlarged partial top plan view of a preferred gate contact structure 71, which includes doped connecting region 79. Doped gate connecting region 79 ties or couples together a plurality of doped gate regions 59 in a single contact region. For ease of understanding, structure 11 shown in FIG. 1 is taken along reference line 1—1 of FIG. 2. Phantom line 89 represents an alternative placement for gate contact layer 86. Doped termination region 159 and termination contact layer 186 are part of a preferred termination structure 91, which is described next in FIG. 3.
Termination structure 91 is formed on a periphery or perimeter of vertical FET structure 11. Structure 91 includes a termination region 159 that is formed at the same time as doped gate regions 59, and comprises the same conductivity type (e.g., p-type when structure 11 comprises an n-channel device). Termination structure 91 provides a means for controlling electric field spread and electric field shape during device operation, and preferably is coupled to gate connecting region 79 as shown in FIG. 2.
By using multiple trench structure 28 according to the present invention, gate region 59 is placed deeper into channel regions 61 and is more separated from source regions 26 thereby improving gate blocking characteristics. Also, by using a doped gate region, the blocking characteristics are further improved compared to conventional Schottky gate designs. Also, because structure 11 comprises a compound semiconductor material, structure 11 has a reduced gate charge, reduced gate resistance, and enhanced switching speeds compared to silicon based devices.
In addition, for a given output current and switching frequency, structure 11 dissipates less power thereby allowing one to use a smaller chip size and a reduced number of phases. Additionally, by using a reduced width second trench 34 and gate connecting regions 79 to couple a plurality of gate regions together, the plurality of doped gate regions 59 are placed close together thereby improving device performance. Moreover, compound semiconductor structure 11 provides a preferred depletion mode or normally on FET device that has advantages for advanced multi-phase power conversion applications because, among other things, a depletion mode device has a lower series resistance compared to an enhancement mode device.
Furthermore, structure 11 can handle more current per phase in a multiphase power conversion application compared to silicon-based or enhancement mode devices. For example, for a 120A/500 kHz application, three phases are required with structure 11 compared to four for a silicon-based device. For a 120A/1 MHz application, four phases are required with structure 11 compared to 5 for a silicon-based device. For a 120A/2 MHz application, four phases are sufficient using structure 11 compared to seven for a silicon-based device. This also enables a smaller system size thereby saving on pc board space, which makes the structure according to the present invention a cost effective alternative for high power/high frequency applications.
Vertical FET device 11 further provides a structure that enables an integration of an improved sense FET in a multi-chip configuration or a single chip configuration. FIG. 4 shows a circuit diagram of a main vertical FET device or cells 41 and a vertical sense FET device or cells 42 according to the present invention. Main FET 41 and sense FET 42 includes source nodes 43 and 46 respectively. The FET devices share a common gate node 47 and a common drain node 48.
FIG. 5 is a top plan view of one embodiment of FIG. 4 showing a simplified chip layout 51. Gate pad 47 is coupled to main FET cells 41 through connecting region 53, and is coupled to sense FET cells 42 through connecting region 49. Common drain 48 (not shown) is a backside contact in this embodiment. The desired current sensing ratio and accuracy is what determines the total area of sense FET cells 42 compared to the total area of main FET cells 41. The physical location of sense FET device 42 on chip 51 is determined by electrical, thermal and package/board layout requirements. As shown, the source regions of sense FET 42 are electrically isolated from the source regions of main FET 41. Typically, the space requirements for sense FET 42 are less than main FET 43, which provides a cost effective integration. Additionally, sense FET 42 preferably comprises a depletion mode double trench compound semiconductor design.
FIG. 6 shows enlarged cross-sectional views of main FET 41 and sense FET 43 according to the present invention. Main FET 41 and sense FET 42 can be separate devices or integrated as shown in FIG. 6. In this embodiment, main FET 41 and sense FET 42 comprise a body of semiconductor material 613. Body of semiconductor material 613 preferably includes a starting substrate or wafer 614 and an epitaxial or drift layer 617 formed on wafer 614. Preferably, epitaxial layer 617 has a dopant concentration on the order of less than 5.0�1017 atoms/cm3, and a thickness greater than about 0.1 micron.
Main FET 41 further includes source regions 43, and sense FET 42 further includes source regions 46, which are formed, for example, in the same as source regions 26 in structure 11. Both FET devices include double gate structures 628, which are formed in the same way as gate structures 28. Both FET devices include doped gate regions 659, which are formed, for example, in the same way as doped regions 59. Sense FET source contact layer or layers 684 provide contact to sense FET source regions 46, and main FET source contact layer or layers 685 provide separate and electrically isolated contact to main FET source regions 43. Contact layer 688 provides a common drain contact for both main FET 41 and sense FET 42.
Thus it is apparent that there has been provided, in accordance with the present invention, a vertical compound semiconductor FET device. A trench within a trench gate structure provides a FET device with improved gate blocking characteristics. Additionally, the FET device has improved high frequency performance characteristics compared to conventional silicon FET devices including enhanced mobility, improved reverse recovery, lower on resistance, and reduced gate charging effects. In addition, the structure according to the present invention provides a sense FET structure that is integrated with a main vertical FET to provide current sensing for applications such as multi-phase power conversion. Furthermore, the structure according to the present invention provides an improved switching device for high power/high frequency dc/dc power conversion applications compared to silicon-based switching devices and other enhancement mode switching mode devices.
Although the invention has been described and illustrated with reference to specific embodiments thereof, it is not intended that the invention be limited to these illustrative embodiments For example, the structure according to the present invention is suitable for p-channel structures. Those skilled in the art will recognize that modifications and variations can be made without departing from the spirit of the invention. Therefore, it is intended that this invention encompass all such variations and modifications as fall within the scope of the appended claims.
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Recipe by JMOUDY
"The unique combination of coffee liqueur, bacon, and creamy cheese sets off these shrimp in a melt-in-your-mouth meal."
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1 cup
coffee-flavored liqueur (such as Kahlua®)
4 ounces
Chihuahua cheese, sliced into strips
large shrimp, peeled and deveined, or more to taste
10 slices
smoked bacon, or more to taste
I had a few problems with this recipe. The bacon took way longer to cook than 5 minutes....almost 15 minutes so the shrimp overcooked & tougened. The Kahlua drizzle seemed like a very sweet syrup. Just didn't get that sweet salty bang we were looking for. Thanks for sharing.
1 Rating
* Percent Daily Values are based on a 2,000 calorie diet.
El Dorado Shrimp
Serving Size: 1/4 of a recipe
Servings Per Recipe: 4
Amount Per Serving
Calories: 481
Calories from Fat: 168
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MLB Baseball Preview 2013: American League West
The AL West is packed with talent and one team that probably already wishes it were September.
The AL West is packed with talent and one team that probably already wishes it were September.
Opening Day in MLB is here. It's time for predictions. You will see predictions on divisions, award winners, rookies who will shine, and veterans who will fade. Just about anything you can think of will be predicted
After having his best season in the big leagues in 2012, New York Mets pitcher Jon Niese was named the Opening Day starter for his team, which begins the 2013 campaign against the San Diego Padres at Citi Field on Monday
Our season preview will get your geared up for the upcoming season as we rundown each division covering the ins and outs of all 30 teams.
Out in the West, the Dodgers grabbed all the headlines with their free-spending ways, but they will have trouble steamrolling the division as the defending World Series Champs and even the Arizona Diamondbacks look to make their lives difficult all summer long
This season, one player will make more in salary than all of the players on another team. Does that sound right?
Opening Day is right around the corner with a 12-game slate on April 1st (technically it's March 31st with Texas heading to Houston – likely a token from MLB to Houston for moving to the AL without incident) followed by another seven on April 2nd that will see the remaining four open up plus provide a buffer for those opening in potential inclement weather spots.
As the Milwaukee Brewers win baseball games this season, their fans can win, too. Marking the coolest thing the team has done for its fans since the Sausage Race, the Brewers are giving fans who buy the Chance 2 Advance ticket plan a seat upgrade each time the Brewers win one of the nine games included in the package.
Arizona Diamondbacks pitcher Daniel Hudson will never forget blowing out his elbow during a game against the Braves in Atlanta on June 26 of last season.