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Understanding Anaesthesia
Story supplied by LU Press Office
Researchers from the Physics Department are spearheading a project, which has the potential to shed light on the mysteries of anaesthesia.
Anaesthesiology is a subtle and imperfect science that is not currently well understood. Without it most modern surgical procedures would be impossible but the mechanisms causing loss of consciousness are not clear. This can result in complications such as a patient regaining consciousness during an operation or, in the most extreme circumstances, death.
The Lancaster University-led BRACCIA project is exploring ways in which the brain's electrical activity varies with the depth of anaesthesia and how waves present in these electrical signals interact with heart and respiration rhythms.
Changes in these three signals, and how they interact with one another, can be used to provide a crucial insight into the changes taking place in the human body during anaesthesia.
The ultimate aim of the project - which is backed by a €1.42 million grant from the European Commission - is to develop the understanding needed to create a new, effective anaesthetic monitor which could be used in operating theatres to keep track of a patient's level of consciousness.
Medical Physicists at Lancaster University are co-coordinating an international team including physicists, biomedical engineers, information scientists, physiologists, neuroscientists and anaesthesiologists working within the Czech Republic, Germany, Norway, Slovenia and Switzerland as well as the UK.
More than 140 patients undergoing surgery will be monitored at both the Ulleval Hospital in Oslo and at the Royal Lancaster Infirmary, Lancaster. The volunteers will have their brain, heart and respiratory signals monitored and recorded before during and after anaesthesia. This should give researchers important information about the progression from unconsciousness to consciousness.
The research will also bring new insights into relationships between brain, heart and breathing - exploring how they interact and which function is driving the others.
Data collected during these experiments will be monitored and interpreted at Lancaster University using some of the latest analysis techniques under development by other BRACCIA partners.
Project scientific coordinator Dr Aneta Stefanovska, of Lancaster University's Physics Department, on whose earlier research in Ljubljana the whole project is based, said: "This is ground breaking research using nonlinear dynamics to deepen our understanding of the body and how its systems interact. This new knowledge has a very clear application and we hope it could eventually be used to develop a failsafe system for measuring anaesthesia levels in patients. It would also enable us to explore the effects of anaesthetic drugs on consciousness."
Professor Peter McClintock, also of Lancaster University's Physics Department, said: "This is a very exciting project, and a wonderful note on which to introduce our new undergraduate degree schemes in Physics with Medical Physics."
Professor Andrew Smith of the Royal Lancaster Infirmary said: "'Unintentional awareness - that is, when anaesthetised patients are awake when they should be asleep - is an uncommon but potentially traumatic complication. There are a number of electronic monitors available to assist anaesthetists in trying to avoid this problem, but none is 100 per cent reliable. We hope that BRACCIA will help us shed light on how the brain's activity changes during anaesthesia and in the future this may go some way towards developing a more reliable monitor of depth of anaesthesia."
Thu 22 June 2006
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Wed 10 June 2015
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Fri 05 June 2015
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Tue 02 June 2015


text:
Our dancers are more
than just students to us -
they are family
than just students to us -
they are family
Free Advanced Class
June 30, 4:30-5:30 pm.
June 30, 4:30-5:30 pm.
Join us for a free Contemporary/Jazz class at our Eugene studio location. Open to all dancers. Recommended for placement for next season.
From toddlers in tutus to teens winning trophies, we have something for everyone. Ballet, Jazz, Tap, Hip Hop, Ballroom – All That! Dance Company has it all. Our dancers are more than just students to us – they are family. We personally invest in every student who walks through our door and build lasting relationships with our dancers and their families. We believe that confidence, poise, dedication and self-expression are just as important as dance itself.Come on in and check us out. We'd love for you to be a part of the All That! family.

subset: commoncrawl


text:
Blood donation: Falling cut-out
Saving one's life now, save your own later.
Advertising Agency: McCann Erickson, Shanghai, China
Creative Director: Kevin Lee
Art Director: Jeremy Guo
Copywriter: Ben Chen
Photographer: Yang Shi
Published: Feb 2007
27 comments
As soon as it went up. (or at least that's what I'd do. i'm sorry but it's just asking to be messed with...)
If they were inteligent they would have made this in a sort of paper that can't be ripped off. Not laminated. It's a rubber-papper that...just...can't...be ripped off.....wonders of the graphic production!
So rubber is a sort of paper?
wonders of graphic production indeed.
Ad looks cool but not sure it would immediately communicate the idea...I've changed my mind, it rocks.
"I don't know Butchie instead"
Doin' it for the points
I love the die cut. That's just great creativity! I do see what people are talking about the copy not being that strong though.
TopCreatives, the premier online community for creative pros.
I love Peter Callesen !
hi, rog
if u ask 100 people what red colour represents, i am comfident they will come out with the answer blood.
i think it's enough to answer ur question.
i like the idea and execution too !!!
good done
That's flat out stealing.
Not cool dudes.
Changing the colour and adding a line doesn't make it yours.....unless you're America. ha ha Hi-5! c'mon who's with me?.no one? ya bunch 'a' republicans.
"I don't know Butchie instead"
Doin' it for the points
Sad truth is, the first chav to walk past (50/50 chance its the first person) would rip this off here, then the ad would be irrelevant.
Nice thinking though.
Rules?! What rules?


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|Bruins use their own comeback vs. Canadiens to keep perspective vs. Flyers
|05.04.11 at 1:20 pm ET
A 2-0 series lead is a good thing, but not the thing that a team ultimately wants. It's a case of a team having desired results so far, but still not having the desired result. One game can change everything, and with the Bruins holding a 2-0 lead on the Flyers entering Game 3 of the Eastern Conference semifinals Wednesday night, the Bruins know that. They should have as good a perspective on that as anyone else.
No, this isn't about the players who were on last year's team thinking back to the blown 3-0 series lead in 2010. Instead, the B's can simply think back to the last series. With the Canadiens winning the first two games of the quarterfinals, the Bruins took Games 3 and 4 in Montreal and eventually won the series in seven games. It all started with that 4-2 Game 3 win, and they know it.
"[We were thinking] that if we got the third game, the series would completely turn around, and that the pressure would be on them, and we'd be right back in it," Brad Marchand recalled Wednesday. "Anything could happen from that point forward, so the third game is a huge turning point. We knew that, and that's what we want to focus on. They're definitely doing that [in the Flyers' room] right now."
The similarities are there for the Bruins in the first round and the Flyers in the second round. Both teams lost the first two games at home, the second of which they had to play without their key defenseman. If the two teams are to share another thing in common, it could come in the form of a win on the road for the Flyers in Game 3.
"We want to make sure that we're ready and not waiting. We're prepared for that. We know that we were down 2-0, and we came back," Marchand said Wednesday. "You kind of use that to put ourselves in this situation here and make sure that we don't give them any opportunity to get back in this series."
While some players are using their first-round triumph to give themselves perspective on how possible a Flyers' comeback is, others are blocking everything out altogether. For Shawn Thornton, it's as simple as winning a game.
"We're not really talking about last series. We know that this is Game 3. It doesn't matter what the record is. It's Game 3, either way. I haven't really put too much thought into anything except for preparing for tonight's game as best as possible."
The idea of not thinking about the score of the series is one shared by Thornton's linemate in Daniel Paille. The fourth-liner remembers the feeling of having to "prove a point" after Game 2 of the last series, but doesn't want to even consider the fact that the B's could potentially have a stranglehold on the series with a win Wednesday. The way he sees it, they haven't accomplished anything yet.
"[Leading] 2-0 doesn't mean much. The way we look at it, it's still 0-0 right now because if start thinking ahead of ourselves, we get in trouble. When we start doing that, it's just not good a team, so we try to do everything we can to stay focused and avoid all of those types of situations."
The Bruins are in the right situation entering Wednesday, but they know as well as anyone that it could be a completely different story when the game is concluded.
|Shawn Thornton laughs off 2010 comparisons, sort of
|04.29.11 at 12:38 pm ET
Following their final practice Friday morning at TD Garden, the Bruins packed their bags and headed for Philadelphia and Saturday's Game 1 of the Eastern Conference semifinals with the Flyers. But before departing, the Bruins addressed the media and spoke of their thoughts on the even of the playoff rematch with the team that came from 3-0 down in the series and Game 7 to eliminate them last spring.
'You think if I answer this question right now, I won't have to answer it the rest of the series? Promise?" Shawn Thornton said with a smile, before adding, "For some of the guys, obviously, here last year, it should be a little bit of motivating tool and a learning lesson. But that being said, last year was last year, this year is this year. Half the team has been turned over. We've brought in some great people.
"So, it's a whole new year. They have new players, we have new players. It doesn't really have a factor on this year's series, except for the fact we haven't forgotten about it because you guys remind us day in and day out, and I'm sure you will for the next two weeks.'
"It's always a new situation, a new opportunity, and that's how we're looking at it," added coach Claude Julien. "Just a new opportunity for us to get past these guys and hopefully, win this series."
Game 1 is 3 p.m. on Saturday with Tim Thomas in net for the Bruins and Brian Boucher expected to get the call for the Flyers. Game 2 is Monday night, also at Wells Fargo Center before the series shifts to Boston next Wednesday and Friday for Games 3 and 4.
|Bruins aren't worried about quick turnaround
|04.27.11 at 5:24 pm ET
A lot has been made of the fact that the Bruins and Canadiens will be playing Game 7 less than 22 hours after the conclusion of Game 6, raising questions about whether fatigue could be a factor Wednesday night. But the Bruins themselves aren't too concerned about the turnaround.
"We're at the stage here that we got trainers, we got good people around," Claude Julien said. "That's all been taken care of, and I'm sure it's the same for the other side. I don't think there's much that gets left behind nowadays. Everybody has a job to do and everybody knows how to do it. You rely on your people around you. And our players are pretty well trained athletes as well that know how to hydrate themselves. Certainly we don't plan on having that as an obstacle tonight."
Shawn Thornton said Wednesday hasn't been any different than any other game day.
"I can't speak for everybody in the dressing room, but nothing," Thornton said when asked what, if anything, changed in his game-day routine. "We got in early enough last night that I got the same amount of sleep as I normally would. I drank the same amount of coffee. '¦ Back-to-backs aren't a big deal. We do them all the time."
|Bruins Game 5 Live Blog: B's, Habs head to overtime
|04.23.11 at 6:29 pm ET
Join DJ Bean, Mike Petraglia and others at the TD Garden for Game 5 of the Eastern Conference quarterfinals.
WEEI.com Bruins Game 5 Live Blog
|Michael Ryder proves Claude Julien right, plays hero in pivotal win over Canadiens
|04.22.11 at 12:09 am ET
MONTREAL — To say that Michael Ryder has been the whipping boy of Bruins fans is an understatement. The $4 million man was far from that for too long after the Bruins' Feb. 9 win over the Canadiens. The free-agent-to-be totaled just two goals over his final 25 games, and was even a healthy scratch three times.
Since the playoffs began, fans and some media members have lobbied for Ryder to watch them from the press box in order to make room for Tyler Seguin in the lineup.
On Thursday, Ryder showed that Claude Julien's decision to stick with him was the right one, ending his lengthy disappearing act with a pair of goals in Game 5 against the Canadiens, including the game-winner in overtime. Julien has coached Ryder everywhere from juniors to the AHL to Montreal to Boston, so it was only fitting that Ryder prove Julien right at Bell Centre.
'I've been with him for a while,' Ryder said of Julien. 'Just for him to give me the ice time and give me the confidence, for me, it just gives me that extra boost to show people that I can still play and still got it.'
Ryder's big night began when he tied the game at one in the second period, beating Habs netminder Carey Price with a wrist shot after taking a pass from Tomas Kaberle. From there, the weight was finally off the struggling winger's shoulders.
'You always get a little frustrated when you don't score and you don't get that many opportunities, but it was definitely a confidence boost,' Ryder said. 'Hopefully now our line keeps generating stuff, helping to do whatever we can to help this team.'
He would go on to assist Chris Kelly's game-tying goal at 13:42 of the third period, which marked the third time in the game that the B's came back to tie it up. They actually never led in the game until Ryder beat Price for the game-winner just 119 seconds into overtime.
'I'm happy for Rydes,' Shawn Thornton said of the winger. 'A couple of guys talked about it before, he usually plays pretty well in this building,' Shawn Thornton said of the former Canadien. 'I'm happy his hard work paid off. Maybe some people in Boston will lay off him now. He's a good guy.'
|Shawn Thornton doesn't think Bruins should be feeling pressure
|04.16.11 at 3:37 pm ET
The Bruins certainly don't want to fall down two games to the Canadiens as they hit the road for Montreal Sunday, but they still haven't strayed from their calm, optimistic view on what they face. One would think they might be facing pressure, but Shawn Thornton doesn't see it that way.
"I think pressure is five kids and no job," he said. "This is just a game. This is fun."
The Bruins were blanked by Carey Price in Game 1, as they got 20 shots blocked and saw their top line produce just one shot on goal through the first two periods.
"There's always pressure," Milan Lucic said. "Game 1 was a big game, and Game 2 is an even bigger game. They're going about it the same way we are. It's a big game for us. We want to get ourselves a split here at home, and we're going to do everything we can to have the preparation and focus to get the result that we want.
"For myself, I obviously played just OK last game," he later added. "For myself, I'm definitely going to do whatever I can to raise my game to another level and see what happens."
|Bruins still not feeling intended effect following frustrating Game 1 loss to Canadiens
|04.15.11 at 12:59 pm ET
WILMINGTON — After failing to score (or get many quality chances) on Canadiens goaltender Carey Price in a 2-0 loss in Game 1 of the Eastern Conference quarterfinals, there was very little, if any, frustration expressed by the Bruins at Ristuccia Arena Friday.
The B's hit the ice for practice, while the Habs regulars were given the day off. Still, optimism filled the Bruins' room. Never mind talk of how ineffective the top line was, or how they couldn't get second or third chances on Price. The way the players see it, thinking about Game 2 is more important than thinking about Game 1.
"It's one game, and we're not going to dwell on it," Brad Marchand said. "It's tough when you run into a hot goalie, but that stuff happens. You've got to find a way around it. '¦ No one wins the Stanley Cup in the first game of the first series. We're not frustrated at all. It's one game, and we've got to put it behind us."
Forward Shawn Thornton, who was given just 5:10 of ice time in the game, shared the same logic.
"It's fine. We're good. It's one game," Thornton said. "We're aware that it's a long series, and we know we can be better, so we're going to be better tomorrow."
Both of the Canadiens' goals were scored by Brian Gionta following Bruins turnovers. Gionta's first-period tally was set up by Scott Gomez after Tomas Kaberle put too much on a reverse, while Gionta's third-period goal came following a Milan Lucic turnover in the Bruins' zone.
"The game's not perfect. There's going to be turnovers every now and again," Thornton said. "You try and limit them as much as possible, but when they happen, you hope that you can get back and bail each other out. That being said, you try and make the right plays at the right time.
"Give them credit, too. They're a pretty good team. Defensively, they did a really good job of clogging up the neutral zone and clogging up the front of the not and blocking people out. You have to give them credit. They're a pretty good team over there."
The B's will host the Habs for Game 2 at TD Garden on Saturday.


text:
A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.
1. A process for imaging a photoresist comprising the steps of,
a) forming a stack of multiple layers of organic antireflective coatings on a substrate comprising coating the layers, and curing and insolubilizing each of the layers of the multiple layers by heating, where each of the organic antireflective coatings independently comprises a polymer comprising an absorbing chromophore;
b) forming a coating of a photoresist over an upper layer of the stack of multiple layers of organic antireflective coatings;
c) imagewise exposing the photoresist with an exposure equipment; and,
d) developing the coating with a developer;
wherein a refractive index of the upper layer of the multiple layers of organic antireflective coatings has a refractive index which is equal to or greater than a refractive index of the photoresist layer and where the refractive indices of the upper layer and the photoresist range from about 1.65 to about 1.75.
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This application is a continuation-in-part of U.S. patent application Ser. No. 11/054,723 filed Feb. 10, 2005, now abandoned, the contents of which are hereby incorporated herein by reference.
The present invention relates to a process for imaging a photoresist, where the photoresist is coated over multiple layers of organic antireflective coatings. The process is especially useful for imaging photoresists using radiation in the deep ultraviolet (uv) region.
Photoresist compositions are used in microlithography processes for making miniaturized electronic components such as in the fabrication of computer chips and integrated circuits. Generally, in these processes, a thin coating of film of a photoresist composition is first applied to a substrate material, such as silicon wafers used for making integrated circuits. The coated substrate is then baked to evaporate any solvent in the photoresist composition and to fix the coating onto the substrate. The photoresist coated on the substrate is next subjected to an image-wise exposure to radiation.
The radiation exposure causes a chemical transformation in the exposed areas of the coated surface. Visible light, ultraviolet (UV) light, electron beam and X-ray radiant energy are radiation types commonly used today in microlithographic processes. After this image-wise exposure, the coated substrate is treated with a developer solution to dissolve and remove either the radiation exposed (positive photoresist) or the unexposed areas of the photoresist (negative photoresist).
Positive working photoresists when they are exposed image-wise to radiation have those areas of the photoresist composition exposed to the radiation become more soluble to the developer solution while those areas not exposed remain relatively insoluble to the developer solution. Thus, treatment of an exposed positive-working photoresist with the developer causes removal of the exposed areas of the coating and the formation of a positive image in the photoresist coating. Again, a desired portion of the underlying surface is uncovered.
Negative working photoresists when they are exposed image-wise to radiation, have those areas of the photoresist composition exposed to the radiation become insoluble to the developer solution while those areas not exposed remain relatively soluble to the developer solution. Thus, treatment of a non-exposed negative-working photoresist with the developer causes removal of the unexposed areas of the coating and the formation of a negative image in the photoresist coating. Again, a desired portion of the underlying surface is uncovered.
Photoresist resolution is defined as the smallest feature which the resist composition can transfer from the photomask to the substrate with a high degree of image edge acuity after exposure and development. In many leading edge manufacturing applications today, photoresist resolution on the order of less than 100 nm is necessary. In addition, it is almost always desirable that the developed photoresist wall profiles be near vertical relative to the substrate. Such demarcations between developed and undeveloped areas of the resist coating translate into accurate pattern transfer of the mask image onto the substrate. This becomes even more critical as the push toward miniaturization reduces the critical dimensions on the devices.
The trend towards the miniaturization of semiconductor devices has led to the use of new photoresists that are sensitive at lower and lower wavelengths of radiation and has also led to the use of sophisticated multilevel systems, such as antireflective coatings, to overcome difficulties associated with such miniaturization.
Photoresists sensitive to short wavelengths, between about 100 nm and about 300 nm, are often used where subhalfmicron geometries are required. Particularly preferred are deep uv photoresists sensitive at below 200 nm, e.g. 193 nm and 157 nm, comprising non-aromatic polymers, a photoacid generator, optionally a dissolution inhibitor, and solvent.
High resolution, chemically amplified, deep ultraviolet (100-300 nm) positive and negative tone photoresists are available for patterning images with less than quarter micron geometries.
Another recent way to improve the resolution and depth of focus of photoresists, has been to use immersion lithography to extend the resolution limits of deep uv lithography imaging. In the traditional process of dry lithography imaging, air or some other low refractive index gas, lies between the lens and the wafer plane. This abrupt change in refractive index causes rays at the edge of the lens to undergo total internal reflection and not propagate to the wafer (
For 193 nm and 248 nm and higher wavelengths immersion lithography, water is of sufficient inherent transparency so that it can be used as the immersion fluid. Alternatively, if a higher NA is desired, water's refractive index can be increased by doping with UV transparent solutes. However, for 157 nm lithography, water's high absorbance makes it unsuitable as an immersion fluid. Currently certain oligomeric fluorinated ether solvents have been used as suitable immersion fluids.
Bottom antireflective coatings are also used to prevent reflection from the various substrates used in IC processing for both dry and immersion lithography. The use of high NA lenses (typically NA greater than 1), especially in immersion lithography, with a wide range of angles of incidence, together with very diverse topographical features on substrates has reduced the effectiveness of single layer antireflective coatings. Multiple layers of bottom antireflective coatings (BARCs) with varying values of refractive index (n) and, especially, absorption (k), for each layer, provide a solution to the difficulties of dry or immersion lithography. Inorganic bottom antireflective coatings allow a gradual change in n and k values through the chemical vapor deposition (CVD) of inorganic materials, as discussed by Chen et al, in Proceedings of SPIE Vol. 4690, pg. 1085-1092, 2002. However, the process complexity of incorporating into the manufacturing process of the device another step requiring a chemical vapor deposition tool is not preferred. Similarly, combinations of organic BARCs and inorganic BARCs are not preferred, since an additional CVD tool is still required. Multiple layers of organic BARCs are more desirable since these layers are formed through a cheaper spin coating process. In most cases with smaller and more complex devices, BARCs which can form planarizing coatings are preferred. Inorganic coatings are conformal, whereas organic BARCs are capable of forming planarizing coatings, thus organic BARCs are preferred. Multiple layers of organic BARCs can provide the gradient in n and k values, but too many layers can add to the complexity of the imaging process. However a minimal number of layers, especially a two layer organic BARC stack, could provide an acceptable compromise. Thus there is a need for a simple multiple stack of organic BARCs which can effectively reduce reflection from the substrate during the imaging process of a photoresist.
The inventors of the present application have found that a process for lithography, especially immersion lithography, which comprises coating a substrate with at least two distinct organic antireflective coatings under a deep uv photoresist, where each antireflective coating having a different set of optical properties, provides unexpectedly good lithographic results.
The present invention relates to a process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the photoresist coating. Preferably the exposure equipment comprises a lens with numerical aperture of greater than one, especially where the exposure equipment uses immersion lithography. The process is particularly suited for stack of multiple layers of antireflective coatings comprising two layers, a lower layer and an upper layer.
The present invention relates to the process for imaging a photoresist using dry or immersion lithography, where a stack of multiple layers of organic antireflective coatings are coated on a substrate with a photoresist coating on top of the antireflective coatings. The photoresist coating is then imagewise exposed. The process is particularly suited for imaging using lithography, especially where the numerical aperture of the lens in the exposure system is greater than one, and more especially for immersion lithography. The process is also suitable for imaging on transparent or partially transparent layers that form part of the substrates. A two layer antireflective coating stack is preferred from a process simplicity point of view, although more layers may also be used based on other lithographic advantages.
In a simple two layer antireflective coating stack, the lower layer antireflective coating (ARC) is formed on a reflective substrate, and over this lower ARC layer an upper layer antireflective coating is formed. The lower layer ARC is more absorbing than the upper layer ARC. Thus, in a multiple stack of ARCs the lower layers are more absorbing than the top layers, thus setting up a gradient of decreasing absorption from the substrate to the photoresist layer. The multiple stack of ARCs reduce the total reflectivity from the substrate to values near 2%, preferable less than 1% by a combination of absorption of exposure radiation in the lower layer and interference effects in the upper layer. Overall absorption can range from 25% to 90% of the light that has penetrated the resist/upper layer ARC interface and the remaining radiation is reduced by destructive interference. A layer of photoresist is then coated over the uppermost layer of antireflective coating. The coatings are then imagewise exposed to radiation in an exposure unit. Immersion lithography, where a suitable immersion liquid is present between the exposure equipment and the coatings, is preferred. After exposure the coatings are baked and developed using an aqueous alkaline developer.
In a multilayer ARC system for one embodiment the absorption of each layer is increased with the highest absorbing layer closest to the substrate and the lowest absorbing layer closest to the photoresist. In a dual layer ARC the lower layer is more highly absorbing than the upper layer. Through computer modeling, as exemplified below, it has been found that for a dual stack system, the absorption of the lower layer ARC ranges from about 0.3 to about 1.2, and the absorption of the upper layer ranges from about 0.05 to about 0.4. Since it is desirable to minimize the thickness of the BARC layers, coatings with high refractive indices (n) are preferable, since the compressed wavelength effectively reduces the thickness necessary to establish the correct phase change. With respect to reflectivity the demands on the refractive index of the lower ARC layer is not as stringent but should be as close to the value of the upper layer to reduce reflections from the upper/lower layer interface. The refractive index for both the ARC layers can range from about 1.5 to about 2.2. Reflectivity is suppressed through a wider range of angles if the topmost ARC layer has a refractive index which is equal to or higher than the refractive index of the photoresist layer. Typically, for most commercial photoresists the refractive index ranges from about 1.65 to about 1.75. Photoresist thickness is carefully chosen to avoid pattern collapse near the maximum thickness and yet maintain a suitable thickness for etch masking near the minimum thickness. Typically the photoresist thickness usually does not exceed 3 times the smallest photoresist feature width. However, mechanically robust resist can exceed this value. Lower photoresist thicknesses can be acceptable depending on the type of processing required for the photoresist. Thus, photoresist thickness can typically range from 15 nm to 300 nm. The exact ARC thickness may also be determined by computer simulations. A first approximation for the photoresist film thickness can be determined to be equivalent to twice the distance of a � multiple of the compressed wavelength (λ/n), increased by 1/cos θ (θ is the angle of light in BARC). Film thickness for the BARC layers should be optimized through simulations, and usually range from 15 nm to 100 nm.
Any type of antireflective coating may be used for the present invention. Most often, the antireflective coating solutions used to form the BARC layers of the present invention comprise a curable polymer. Typically the antireflective coating comprises a polymer, a crosslinking agent, an acid generator and a solvent. The absorbing chromophore may be present in the polymer or as a dye additive. The polymer is capable of crosslinking with the crosslinking agent, preferably in the presence of an acid. The acid may be generated thermally or photolytically. The polymer comprises a moiety containing a crosslinking site and a moiety containing a chromophore which absorbs at the exposure wavelength. The polymer may contain other functionalities which provide the necessary solubility characteristics and other properties for good lithographic performance. In order to meet the physical parameters required for the ARC layers, the polymer of the different layers are designed differently. The lower layers require higher absorption characteristics than those above them, and thus must have more units which have functionalities that absorb radiation of the exposure wavelength or functionalities with higher extinction coefficient. As an example, 248 nm ARC polymers may contain anthracene functionalities, and 193 nm and 157 nm ARC polymers may contain aromatics with one ring, carbonyls and imides. The absorbing units may also provide a crosslinking site. The ARC polymers may be synthesized typically by condensation or free radical polymerization, though any type of polymerization may be used. Typical condensation polymers are exemplified, without limitation, by a) polyamides which are formed by reacting diamines with dicarboxylic acids, diamines with acid chlorides of a dicarboxylic acids; b) polyesters which are formed by reacting dialcohols with dicarboxylic acids, dialcohols with diesters; and c) polyurathanes which are formed by reacting dialcohols with diisocyanates. Typical examples of absorbing monomers for condensation polymerization are 1,4-benzenedimethanol, terephthalic acid, dimethyl terephthalate, alpha,alpha,alpha′,alpha′-tetramethyl-1,4-benzenedimethanol, 4-(aminomethyl)benzylamine terephthalamide: the proceeding examples are all 1,4 substituted which need not be the case and any substitution pattern will work.
Typical polymers for free radical polymerization are exemplified, without limitation, by the polymerization of monomers containing at least one double bond, which include, alkenes, vinyl aromatics, alkyl alkyl acryate and halogenated analogs of each example of the previous examples. Typical absorbing monomers for free radical polymerization are exemplified, without limitation, by monomers containing at least one double bond, such as such as methyl (2Z)-3-phenyl-2-butenoate, vinyl cinnamate, benzyl methacrylate and styrene.
The ARC polymers may contain other comonomers which are nonabsorbing or weakly absorbing. These monomers may provide other properties, such as crosslinking sites, functionalities that modify the solubility of the polymer in various solvents used to formulate the ARC, monomers to modify the absorption of the polymer to the desired range, monomers that adjust the dry etch rate to the desired values. Typically the etch rate of the ARC layers is the same or higher than the etch rate of the photoresist coated over the ARCs. Aromatic functionalities have a slower etch rate than alicyclic functionalites, which are slower than linear or branched aliphatic functionalities. Such comonomers are exemplified, without limitation, by methyl acrylate, methyl methacrylate, methyl vinyl ether, hydroxyethyl methylacrylate, and 2-hydroxypropyl methylacrylate.
Some useful polymers for antireflective coatings and useful monomers to make the polymers of the present invention are disclosed in the following patents and patent application, U.S. Pat. Nos. 5,994,430, 6,187,506, 6,114,085 and 2004/0101779, and incorporated herein by reference.
The exact proportion of the various monomers incorporated into the polymer is predicated on the exact lithographic properties required. The polymer, once formed, may also be further reacted with compounds to give the final polymer.
The weight average molecular weight of the polymer may range from about 1500 to about 180,000, preferably from about 4,000 to about 60,000 and more preferably from about 10,000 to about 30,000. When the weight average molecular weight is below 1,500, then good film forming properties are not obtained for the antireflective coating and when the weight average molecular weight is too high, then properties such as solubility, storage stability and the like may be compromised.
Since spin coating of a stack of multiple ARCs can lead to nonuniform intermixing between the layers, it is desirable to have very little or no intermixing between the ARC layers.
Typically the antireflective coating composition comprises a polymer, a crosslinking agent, an acid or/and an acid generator, and a solvent.
A variety of crosslinking agents can be used in the composition of the present invention. Any suitable crosslinking agents that can crosslink the polymer in the presence of an acid may be used. Examples, without limitation, of such crosslinking agents are resins containing melamines, methylols, glycoluril, benzoguanamine, urea, hydroxy alkyl amides, epoxy and epoxy amine resins, blocked isocyanates, and divinyl monomers. Monomeric melamines like hexamethoxymethyl melamine; glycolurils like tetrakis(methoxymethyl)glycoluril; and aromatic methylols, like 2,6 bishydroxymethyl p-cresol are preferred.
Other types of polymers (which also refers to oligomers) which contain functionalities that enhance dry etch resistance may be used, such as polymers having incorporated into them silicon, germanium or boron. These functionalities, especially silicon, may be part of the polymer backbone or be pendant from the polymer backbone and these polymers may further incorporate into them absorbing organic chromophores as described previously. Such antireflective coatings comprising, for example, organo-silicon materials, such as those described in WO 2004/113417, are desirable for their dry etch resistance and for their ability to form coatings that are spin coatable. Siloxane-type of polymers with attached chromophores can be used; examples of chromophores are phenyls, anthracenyls and naphthyls. The polymers may be crosslinked by heating the antireflective coating alone and may not require a crosslinking agent, although a crosslinking agent may be used. The polymers may be used dissolved in a solvent and optionally contain other additives. Examples of additives are thermal acid generator, photoacid generator, plasticizers, etc.
The (thermal or photo) acid generator of the present invention, preferably a thermal acid generator, is a compound which, when heated to temperatures greater than 90� C. and less than 250� C., generates an acid. The acid crosslinks the polymer. The antireflective film after heat treatment becomes insoluble in the solvents used for coating photoresists, and furthermore, is also insoluble in the alkaline developer used to image the photoresist. Preferably, the thermal acid generator is activated at 90� C. and more preferably at above 120� C., and even more preferably at above 150� C. The antireflective film is heated for a sufficient length of time to crosslink the coating. Examples of thermal acid generators are nitrobenzyl tosylates, such as 2-nitrobenzyl tosylate, 2,4-dinitrobenzyl tosylate, 2,6-dinitrobenzyl tosylate, 4-nitrobenzyl tosylate; benzenesulfonates such as 2-trifluoromethyl-6-nitrobenzyl 4-chlorobenzenesulfonate, 2-trifluoromethyl-6-nitrobenzyl 4-nitro benzenesulfonate; phenolic sulfonate esters such as phenyl, 4-methoxybenzenesulfonate; alkyl ammonium salts of organic acids, such as triethylammonium salt of 10-camphorsulfonic acid.
Thermal acid generators are preferred over free acids, although free acids may also be used, in the novel antireflective composition, since it is possible that over time the shelf stability of the antireflective solution will be effected by the presence of the acid, if the polymer were to crosslink in solution. Thermal acid generators are only activated when the antireflective film is heated on the substrate. Additionally, mixtures of thermal acids and free acids may be used. Although thermal acid generators are preferred for crosslinking the polymer efficiently, an antireflective coating composition comprising the polymer and crosslinking agent may also be used, where heating crosslinks the polymer. Examples of a free acid are, without limitation, strong acids, such as sulfonic acids. Sulfonic acids such as toluene sulfonic acid, triflic acid or mixtures of these are preferred.
The novel composition may further contain a photoacid generator, examples of which without limitation, are onium salts, sulfonate compounds, nitrobenzyl esters, triazines, etc. The preferred photoacid generators are onium salts and sulfonate esters of hydoxyimides, specifically diphenyl iodnium salts, triphenyl sulfonium salts, dialkyl iodonium salts, triakylsulfonium salts, and mixtures thereof.
The amount of the polymer in the ARC composition can vary from about 95 weight % to about 50 weight %, preferably about 85 weight % to about 70 weight % and more preferably about 80 weight % to about 70 weight %, relative to the solid portion of the composition. The amount of the crosslinker in the present composition can vary from 5 weight % to about 50 weight %, preferably 15 weight % to about 30 weight % relative to the solid portion of the composition. The amount of the acid or acid generator in the present composition can vary from 0.1 weight % to about 5 weight %, preferably 0.5 weight % to about 3 weight % and more preferably 1 weight % to about 2 weight %, relative to the solid portion of the composition.
Typical solvents, used as mixtures or alone, that can be used for the present composition, without limitation, are propylene glycol monomethyl ether acetate (PGMEA), propylene gycol monomethyl ether (PGME), and ethyl lactate (EL), 2-heptanone, cyclopentanone, cyclohexanone, and gamma butyrolactone, but PGME, PGMEA and EL or mixtures thereof are preferred. Solvents with a lower degree of toxicity, good coating and solubility properties are generally preferred.
The antireflective coating composition comprises the polymer, crosslinker and the acid generator of the instant invention and a suitable solvent or mixtures of solvents. Other components may be added to enhance the performance of the coating, e.g. monomeric dyes, lower alcohols, surface leveling agents, adhesion promoters, antifoaming agents, etc. Other polymers, such as, novolaks, polyhydroxystyrene, polymethylmethacrylate and polyarylates, may be added to the composition, providing the performance is not negatively impacted. Preferably the amount of this polymer is kept below 50 weight % of the total solids of the composition, more preferably 20 weight %, and even more preferably below 10 weight %.
Since the antireflective film is coated on top of the substrate and is further subjected to dry etching, it is envisioned that the film is of sufficiently low metal ion level and of sufficient purity that the properties of the semiconductor device are not adversely affected. Treatments such as passing a solution of the polymer through an ion exchange column, filtration, and extraction processes can be used to reduce the concentration of metal ions and to reduce particles.
The substrates over which the antireflective coatings are formed can be any of those typically used in the semiconductor industry. Suitable substrates include, without limitation, silicon, silicon substrate coated with a metal surface, copper coated silicon wafer, copper, aluminum, polymeric resins, silicon dioxide, metals, doped silicon dioxide, silicon nitride, tantalum, polysilicon, ceramics, aluminum/copper mixtures; gallium arsenide and other such Group III/V compounds. The substrate may comprise any number of layers made from the materials described above.
The lower layer antireflective coating composition is coated on the substrate using techniques well known to those skilled in the art, such as dipping, spin coating or spraying. The film thickness of the antireflective coating ranges from about 15 nm to about 200 nm. The optimum film thickness is determined by the type of the stack of ARC coatings. The coating is further heated on a hot plate or convection oven for a sufficient length of time to remove any residual solvent and induce crosslinking, and thus insolubilizing the antireflective coating to prevent intermixing between the antireflective coatings. The preferred range of temperature is from about 90� C. to about 250� C. If the temperature is below 90� C. then insufficient loss of solvent or insufficient amount of crosslinking takes place, and at temperatures above 250� C. the composition may become chemically unstable. Likewise, the second layer of the antireflective coating is coated over the lower layer and baked. Multiple layers of antireflective coatings are coated. A film of photoresist is then coated on top of the uppermost antireflective coating and baked to substantially remove the photoresist solvent. An edge bead remover may be applied after the coating steps to clean the edges of the substrate using processes well known in the art.
Photoresists can be any of the types used in the semiconductor industry, provided the photoactive compound in the photoresist and the antireflective coating absorb at the exposure wavelength used for the imaging process.
To date, there are three major deep ultraviolet (uv) exposure technologies that have provided significant advancement in miniaturization, and these use lasers that emit radiation at 248 nm, 193 nm and 157 nm. Photoresists for 248 nm have typically been based on substituted polyhydroxystyrene and its copolymers/onium salts, such as those described in U.S. Pat. No. 4,491,628 and U.S. Pat. No. 5,350,660. On the other hand, photoresists for exposure below 200 nm require non-aromatic polymers since aromatics are opaque at this wavelength. U.S. Pat. No. 5,843,624 and GB 2320718 disclose photoresists useful for 193 nm exposure. Generally, polymers containing alicyclic hydrocarbons are used for photoresists for exposure below 200 nm. Alicyclic hydrocarbons are incorporated into the polymer for many reasons, primarily since they have relatively high carbon to hydrogen ratios which improve etch resistance, they also provide transparency at low wavelengths and they have relatively high glass transition temperatures. U.S. Pat. No. 5,843,624 discloses polymers for photoresist that are obtained by free radical polymerization of maleic anhydride and unsaturated cyclic monomers. Any of the known types of 193 nm photoresists may be used, such as those described in U.S. Pat. No. 6,447,980 and U.S. Pat. No. 6,723,488, and incorporated herein by reference.
Two basic classes of photoresists sensitive at 157 nm, and based on fluorinated polymers with pendant fluoroalcohol groups, are known to be substantially transparent at that wavelength. One class of 157 nm fluoroalcohol photoresists is derived from polymers containing groups such as fluorinated-norbornenes, and are homopolymerized or copolymerized with other transparent monomers such as tetrafluoroethylene (Hoang V. Tran et al Macromolecules 35, 6539, 2002, WO 00/67072, and WO 00/17712) using either metal catalyzed or radical polymerization. Generally, these materials give higher absorbencies but have good plasma etch resistance due to their high alicyclic content. More recently, a class of 157 nm fluoroalcohol polymers was described in which the polymer backbone is derived from the cyclopolymerization of an asymmetrical diene such as 1,1,2,3,3-pentafluoro-4-trifluoromethyl-4-hydroxy-1,6-heptadiene (Shun-ichi Kodama et al Advances in Resist Technology and Processing XIX, Proceedings of SPIE Vol. 4690 p 76 2002; WO 02/065212) or copolymerization of a fluorodiene with an olefin (WO 01/98834-A1). These materials give acceptable absorbance at 157 nm, but due to their lower alicyclic content as compared to the fluoro-norbornene polymer, have lower plasma etch resistance. These two classes of polymers can often be blended to provide a balance between the high etch resistance of the first polymer type and the high transparency at 157 nm of the second polymer type.
After the coating process, the photoresist is imagewise exposed. The exposure may be done using typical dry exposure or may be done using immersion lithography. Multiple layers of antireflective coatings are particularly advantageous for imaging with immersion lithography where the lens has high numerical aperture (NA), especially where the NA is greater than 1.
The exposed photoresist is then developed in an aqueous developer to remove the treated photoresist. The developer is preferably an aqueous alkaline solution comprising, for example, tetramethyl ammonium hydroxide. An optional heating step can be incorporated into the process prior to development and after exposure.
The process of coating and imaging photoresists is well known to those skilled in the art and is optimized for the specific type of resist used. The image transfer through to the substrate from the imaged photoresist and through the antireflective coatings is carried out by dry etching in a similar manner used for etching through a single layer organic antireflective coating. The patterned substrate can then be dry etched with an etching gas or mixture of gases, in a suitable etch chamber to remove the exposed portions of the antireflective film, with the remaining photoresist acting as an etch mask. Various gases are known in the art for etching organic antireflective coatings, such as O2, Cl2, F2 and CF4.
In one embodiment any of the top antireflective coatings may be an organic coating which when exposed can be developed with the same aqueous alkaline developer as the photoresist and in the same step. Such developer soluble antireflective coatings are known in the art and examples of which are in the following references which are incorporated by reference: U.S. Pat. No. 6,844,131 and US 2005/0214674.
In the processing of semiconductors and other substrates antireflective coatings are used to suppress reflections in photoresist. Bottom antireflective coatings are coated on top of a substrate and underneath a photoresist film. Antireflective coatings help suppress reflection effects like standing waves in the photoresist, reflective notching and exposure dose changes due to natural fluctuations in the thickness of the photoresist and substrates. If the photoresist and antireflective coatings are coated over a substrate that contains a layer that is not totally opaque to the actinic light, then changes in the thickness of transparent or partially transparent layer(s) in the substrate underneath the photoresist can cause the photoresist to see a different effective exposure dose for different thicknesses of that layer, resulting in unwanted changes in the critical dimensions (CD) in the exposed and developed photoresist pattern. Examples of materials that could make up such a transparent or partially transparent layer are 1) silicon nitride, which is transparent at 248 nm and 365 nm and partially transparent at 193 nm, 2) silicon dioxide, which is transparent at 157, 193 nm, 248 nm and 365 nm, and 3) porous variants of oxide, which can be used as low k dielectrics and have partial or full transparency at these wavelengths. For a transparent layer, it takes one quarter the wavelength of the actinic light in that material to go from destructive interference to constructive interference. Therefore, as an example for silicon dioxide transparent layer on a substrate, using 193 nm exposure wavelength, this thickness change is about 31 nm (193 nm/(1.56�4), where 1.56 is the refractive index of silicon dioxide at 193 nm). Given that in many cases silicon dioxide can be many hundreds of nanometers thick, and that thickness tolerances including cross wafer, wafer to wafer and lot to lot variation are often +/−10% or more, it is clear that oxide thickness can make a significant contribution to the reflected component of light in the photoresist, known as "oxide swing".
In order to avoid the effect of oxide swing the applicants have found that a multilayer antireflective coating works much better than a single layer antireflective coating. If a single layer antireflective coating is used on top of a transparent layer on a substrate, then a high absorbance, typically a k value of 0.5 or greater will have to be used to suppress the swing due to variations in the thickness of the transparent layer. However, photoresists have to be transparent, with k values less than 0.05 to function well, which makes the difference between the refractive indices of the antireflective coating and the photoresist large enough that there is substantial residual reflection from the surface of the antireflective coating into the photoresist, leading to a significant CD swing curve for changes in photoresist thickness. However, if a dual layer antireflective coating is used, where the underlayer has a high absorbance, and the top layer has a lower k value, then the effect on CD of the oxide swing and the photoresist swing can be minimized simultaneously. Thus in one embodiment the multilayer antireflective coatings are formed on a transparent or partially transparent substrate layer, where the substrate may comprise various compositionally different layers.
Each of the documents referred to above are incorporated herein by reference in its entirety, for all purposes. The following specific examples will provide detailed illustrations of the methods of producing and utilizing compositions of the present invention. These examples are not intended, however, to limit or restrict the scope of the invention in any way and should not be construed as providing conditions, parameters or values which must be utilized exclusively in order to practice the present invention.
The refractive index (n) and the absorption (k) values of the antireflective coating in the Examples below were measured on a J. A. Woollam VASE32 ellipsometer.
The molecular weight of the polymers was measured on a Gel Permeation Chromatograph.
Computer simulation studies were carried out in Prolith v8.1 (available from Finle Corp. Austin, Tex.) to investigate the comparative performance of three organic antireflective systems: two single-layer BARCs designed for 1st and 2nd minimum film thickness application, and the dual layer BARC system.
The response evaluated was substrate reflectivity, Sr, and the % resist critical dimension (CD) swing amplitude evaluated for a range of k1 values ranging from 0.6 to 0.28 at 193 nm. The inputs for all BARCs were film thickness. The optical constants for each BARC were fixed; the film thickness (FT) ranges evaluated were for:
Single Layer BARC:
For 1st min SLR: AZ� 1C5D, FT 20 nm to 80 nm, n=1.6−0.51i at 193 nm
For 2nd min SLR: AZ� ArF38, FT 50 nm to 120 nm, n=1.7−0.34 i at 193 nm
Dual layer: Upper Layer BARC, FT 13 nm to 77 nm, n=1.702−0.196i at 193 nm; Lower Layer BARC, 0 nm to 64 nm, n=1.904−0.67i at 193 nm
The AZ� solutions are available from AZ� Electronic Materials USA Corp., Somerville, N.J.
The modeled illuminator and mask conditions for 193 nm dry lithography were: 0.78 NA, 0.3 conventional sigma, alternating phase shift mask.
For each single layer BARC film thickness or, in the case of the dual layer BARC combination of film thicknesses, and photoresist film thicknesses were varied from 10 nm to 200 nm in steps of 2 nm. Photoresist CDs for each discrete photoresist thickness were evaluated at the approximate Esize dose for each k1 value, where k1=(resolution)�(numerical aperture)/(wavelength of exposure radiation).
The CD swing amplitude for each combination of BARC film thickness and k1 was approximated by evaluation of the fitted parameters derived from least-squares regression analysis. The trigonometric mathematical model used was a form of the physical equation for simple harmonic motion with 5 adjustable parameters, and by analyzing the fitted amplitude parameter the CD swing amplitude can be evaluated. CD swing data sets with fit R-square values of less than 0.8 were filtered from the data set.
Additionally, the larger range of dual layer BARC film thickness tolerance suggests better planarization properties, an important consideration with regard, at least, to usable resist depth-of-focus.
83.2 g of benzyl methacrylate, 25.8 g of hydroxyethyl methacrylate, 500 ml tetrahydrofuran (THF) and 2 g 2,2 azobisisobutyronitrile (AIBN) were combined, in that order, to a 1 L round bottom flask. The solution was refluxed for 12 hr under nitrogen. After cooling, the polymer was recovered by precipitation into 4 L of hexane, filtered and dried in a vacuum desiccator. The polymer was produced with a 98.5% yield. The reaction scheme for this procedure is shown below. The molecular weight of the HB polymer as measured using GPC with a polystyrene standard was 30,000. The NMR for the polymer was measured using 300 MHZ, H1-spectrum in acetone-d6, and the results were S, br, 7.35 ppm, 5H, phenyl protons; S, br, 7.35 ppm, 2H, CH2-phenyl; M, br, 3.6 to4.2 ppm, 1H O—CH2—CH2.
The formulation consisted of 9.21 g of HB copolymer (Example 2), 2.76 g MX-270 (available from Sanwa Chemical Co Ltd. 6520, Tamura, Hiratuka-city, Kanagawa, Japan), 2 g dodecylbenzylsulfonium triethylammonium salt, 2 g of p-toluenesulfonic acid triethylammonium salt, and 460 g 70/30 PGMEA/PGME.
The formulation consisted of 6.2 g EHMA (available from DuPont Electronic Technologies, P.O. Box JJ, Ingleside, Tex.), 3.01 g EHMV2 (Dupont ET.), 1.86 g dodecylbenzylsulfonium triethylammonium salt, 1.86 g of p-toluenesulfonic acid triethylammonium salt, triphenylsulfonium nonaflate and 460 g 70/30 PGMEA/PGME. The formulation for this procedure is shown below.
A two layer bottom antireflective coating stack was applied to a silicon wafer by spin coating at 2000 rpm a lower layer (LDL1, Examples 3) and baking at 200� C. for 60 seconds followed by spin-coating at 2000 rpm an upper layer (UDL1, Example 4) and baking at 200� C. for 60 seconds. The optical indices and film thicknesses are recorded in Table 1. Optical constants, n and k, and film thicknesses were measured on a J. A. Woollam� VUV VASE� Spectroscopic Ellipsometer.
Using AZ� EXP IRC1000, (available from AZ Electronic Materials, Somerville, N.J.) different photoresist films thicknesses were spin coated onto the two layer ARC coated wafers from Example 5, and the wafers were baked at 130� C. for 60 seconds. The resultant films were exposed on a Exitech 193 nm immersion stepper located at Rochester Institute of technology; NA=1.07; illumination, quadrapole center sigma=0.812; sr=0.15, binary reticle; field step 2 mm�2 mm. Wafers were then post-exposure baked (PEB) at 115� C. for 90 s. The films were developed in 0.26N tetramethyammonium hydroxide aqueous solution for 30 seconds. The exposure dose at 0.0 focus was 52 mJ/cm2. The imaged photoresist features were analyzed using SEM. Line and space photoresist features were observed for 80 nm L/S up to 150 nm L/S on all wafers and were of good lithographic quality with no standing waves.
A two layer antireflective coating stack and photoresist were coated as in Example 5. The resultant films were exposed on an Amphibian 193 nm immersion interferometer stepper located at Rochester Institute of technology; NA was 1.05. The wafers were then post-exposure baked (PEB) at 115� C. for 90 s. The films were developed in 0.26N TMAH aqueous solution for 30 seconds. Features were viewed using JEOL JWS-7550 electron micrographs. The 65 nm line/space pattern was of good lithographic quality.
A DL-BARC and photoresist were coated as in Example 5. The resultant films were exposed on a Nikon 306D 193 nm scanner; NA was 0.78; illumination, ⅔ annular, 6% attenuated phase shift reticle. Wafers were then post-exposure baked (PEB) at 115� C. for 90 s. The films were developed in 0.26N TMAH aqueous solution for 30 seconds. Coating, bake and development were done on a TEL� ACT 12 track which was linked to the Nikon tool. Top Down SEM pictures were obtained with a KLA8100 CD-SEM. The 95 nm line/space patterns with an exposure dose of 30 mJ/cm2 showed no standing waves and the images were of good lithographic quality.
An organo-silicon polymer of the type disclosed in WO 2004/113417 available from Dow Corning Corporation, 2200, West Salzburg Road, Midland, Mich. which had high absorption at 193 nm wavelength (n of 1.82 and k of 0.67 at 193 nm) was used as an lower-layer BARC material of the dual layer scheme. The solid content of this solution was adjusted with PGMEA so that 88 nm film thickness was achieved by spin-coating. This diluted solution, was spin-coated on bare silicon and the coated wafer was hard-baked at 250� C. for 90 seconds to cure the material. Then an additional organic antireflective coating material UDL1 from Example 4, (n of 1.7 and k of 0.2 values at 193 nm), was applied on the top of the cured lower film as an upper-layer BARC of dual-layer BARC scheme. A second hard bake, 200� C./60 s was applied to cause a cross-linking of the spin-coated film of upper organic BARC. The spin speed was adjusted so that 45 nm of the film thickness of the upper-layer BARC material was obtained.
A positive working 193 nm resist formulation, AZ� EXP IRC1500 (available from AZ Electronic Materials, Somerville, N.J.), was spin-coated on top of the wafer coated with the dual layer antireflective coatings and baked at 130� C./60 s to give a film thickness of 190 nm. The photoresist was then exposed by a Nikon 306D scanner (numerical aperture of 0.85 and dipole-illumination). After exposure, the wafer was subjected to a post-exposure bake step at 110� C. for 60 sec. The imaged photoresist was then developed with a 2.38 weight % aqueous solution of tetramethyl ammonium hydroxide for 30 sec. The line and space patterns were then observed by a scanning electron microscope. The photoresist showed an excellent resolution of 80 nm (1:1) free from scum and resist residue.
A photoresist was coated on top of an antireflective coating which was on top of silicon oxide layer which in turn was on top of a silicon nitride layer, all of which are on a silicon substrate. The silicon oxide had a thickness tolerance of +/−75 nm and was transparent at the actinic wavelength of 193 nm. Using a calibrated photoresist model for AZ� T8328 photoresist (available from AZ Electronic Materials, Somerville, N.J.), the CD swing curves for 100 nm dense contact holes were simulated for two antireflective coating cases. CD swing curve is the variation of the critical dimensions of a photoresist pattern as a parameter is changed, such as the photoresist film thickness or the oxide thickness. An optimized single layer antireflective coating, 60 nm thick AZ� ArF-11 (available from AZ Electronic Materials, Somerville, N.J.), with n=1.75, k=0.57, and for a dual layer antireflective coating, 35 nm thick UDB1, n=1.70, k=0.20 over 52 nm LDB1, n=1.91, k=0.67 assuming a 6% attenuated contact hole mask with a 30 nm mask bias, 0.78NA and 0.80 sigma conventional illumination. Both antireflective coating options suppressed the CD swing curve due to oxide thickness variations to less than about 2 nm. However the CD swing curve due to photoresist thickness variations was very different for the two cases. In the case of the single layer antireflective coating the CD swing from changes in photoresist thickness was 27 nm, much more than desired. In the case of the dual layer antireflective coating, the CD swing from changes in photoresist thickness was 5 nm, a very desirable result. This result was achieved with a dual layer antireflective coating system whose n and k values were optimized for use on silicon. Better reflectivity control could have been obtained on oxide with a dual layer antireflective coating that has somewhat higher k values, for example 0.3 and 0.9 for the upper and lower antireflective coating layers, respectively.
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What's New
Air Hockey Deluxe
Time to hit the ice with this No.1 Android version of Air Hockey game. Designed to deliver the amazing graphic quality of glow display, see and feel the real air hockey experience. With three levels of difficulty the computer can be a good match for anyone, from new comer to hockey expert! You can also play against a friend on the same device.
Game Features:
- Visually stunning glow graphics
- 1 Player (Classic and Timed) & 2 Players Mode
- 6 different set of tables, mallets and pucks
- Amazing game sound effects
Air Hockey Ultimate
"Best I played and found it great fun. Graphics is superb." - Dinesh
"great game, my kids and I love this game" - Kiandra
"Exelente Tiene mas formas de juego y escenarios que otros de su tipo ademas y os buenusimos efectos especiales lo recomiendo!" - Ramon
"Super spiel für jeden zu empfehlen" - Marcel
Discover this top free air hockey game with championship mode and amazing features!
- VS CPU: Battle it out against 4 settings of computer, or select a custom A.I. setting
- VS HUMAN: Same device air hockey battle against your friend
- CHAMPIONSHIP: 4-10 players, A.I. or human, full championship with a reward in the end
- AWESOME GRAPHICS, running on all Android 2.3 and newer devices
- Smooth and responsive gameplay based on REALISTIC PHYSICS
- 10 TABLE THEMES (football, ice hockey, soccer, racing, classic, christmas, valentine, metal, denim, retro) different not only in graphics, but gameplay feel
- GREAT EFFECTS, sparks, explosions, and lights glow when you make a goal
- Completely FREE, FULLY FEATURED game
- Integrated with Immersion Tactile Effects
- Can be installed on SD card too
The beloved air hockey game of Fat Bat Studio Ltd available now on Android! Amazing graphics, great effects, easy to learn, hard to master gameplay, and a small install size makes it a great air hockey experience, one of the best of it's kind, and for free!
You can play against different level AI opponents, to choose the best one matching your skills, set up a custom AI to beat, making it harder and harder as your skills get better, or play against your friend on the same device, trying to be the best.
In the additional Championship Mode you can play against 4, 6, 8 or 10 opponents, human or computer controlled! The present version contains 10 skins, which not just look very different, but also plays different! An addictive air hockey sports game for every generation, with metal hockey, real hockey, classic air hockey, soccer (european football), american football, neon retro glow, christmas, valentine, racing and button hockey themes now, which will be expanded upon with updates.
Patrick Kane's Arcade Hockey
Ditch the rules and rip a slapshot past the goalie in this fun-filled 3-on-3 puckfest with exaggerated 3D visuals, 18 national teams and classic arcade gameplay. Beam your opponents up to another galaxy with eye-popping game changers in the Power Hockey League, all while racking up the cup trophies at home and on foreign land.
Earn coveted KANE cards to unlock extra game modes, over 40 city teams and the chance to play as the scoring maestro himself: Patrick Kane!
Power up and blast off to another dimension in the Power Hockey League, where pucks explode and UFOs collect pesky opposing players. This otherworldly mode comes complete with a variety of power-ups, boosts and custom rinks for a magical game of arcade hockey.
Give your rivals a cold welcome to the big leagues with twisted wristers and screaming Howitzers all aimed at your opponent's top shelf. Choose from one of 18 national teams from the get-go and unlock more squads to showcase your hockey prowess on a city level.
From classic international clashes of the hockey giants to socking it to your city rivals, there's more than enough glory to be won in the City and Nations Cups.
Claim all the achievements and unlock KANE cards to show the fellow hockey hounds just exactly who runs this rink. Post your achievements on leaderboards and Facebook to see if your friends can beat you at your own game.
Phoenix™ engine powers the big-headed action with eye-popping 3D graphics and classic arcade controls. No tutorials needed beyond a rink, a stick and some flavored ice to get your puck on.
Want more Kane and hockey? If it's a resounding YES, check out Patrick Kane's Hockey Classic on Google Play for more Kane-infused hockey shenanigans on ice.
Want in on all the community action? Come and join our Facebook posse at facebook.com/patrickkanegame
McDonald's, the Golden Arches logo and I'm lovin' it are trademarks of McDonald's Corporation and its affiliates, used with permission.
Mini Hockey Stars
Play with your friends online. Play blitz games against players from all over the world.
You can play offline against a friend in the same device or play with AI.
Choose your hockey team, defend your nation's colors or choose premium skin. Collect all
hockey teams, collect all formations and improve your skills. Good luck!
- Online and offline multiplayer game
- Simple and fun gameplay
- Amazing ice physics
- Play against your friends
- Collect all teams and formations
Puppet Ice Hockey: 2015 Czech
Focus on the fun on the rink:
- Funny cartoon caricatures
- All the famous ice hockey sock puppets and teams from 2014/2015
- Silky smooth gameplay available for every device
- Big head 2-player mode in splitscreen multiplayer
Faceoff, crossed sticks, body check, cross check it is all there. Watch out for holding and roughing, your nofeet marionetas might look loony, but they can be dangerous.
Can you shoot hattrick in top shelf like Jagr, Chelios, Iginla, Sakic, Forsberg, Malkin, Lemieux, Gretzky, Ovechkin, Bure, Coffey, Larionov, Jokinen, Hertl or Yzerman?
If you are defensive goalie guy watching your top shelf, you will find your place on the rink. Keep forechecking and roughing and save like Hasek.
All the best 2014/2015 nofeet players ready to fight for their countries overtime.
Change your controls to suit your style to give your marioneta players the best chance of victory. Practice forechecking, holding, roughing, crosschecking overtime to make yourself a marionette master on the rink. Play nofoot striker, goalkeeper, defense and wing all at the same time…
Tournamet features:
- 16 top sock puppet teams
- More than 60 cartoon hand puppets of famous players
- Splitscreen multiplayer for two players on a single device
- Win the tournament of 2015 with achievements and highscores
- Big head nofeet marionettes from NOXGAMES 2014
- Upgrade your marionettes – improve skating speed, slapshot power, jump of goalies to catch the puck
Ballanced difficulty suits to all players, but this tournament is the best for casual puppeteers, it is easy to hit top shelf with any slapshot. Nofoot puppets skate easily.
Don't forget to try amazing splitscreen multiplayer. Imagine duel between Iginla, Chelios, Tretiak, Abdelkader, Girgensons, Brodeur, Bure, Coffey, Iginla, Mackinnon, Sawchuck, Yzerman, Jokinen, Vezina, Hasek, Jagr, Mezin, Sakic, Immonen, Larionov, Ovechkin, Komarov, Bobrovskij, Lidstrom, Forsberg, Lemiuex, Laco, Orr, Malkin, Larkin, Jensen, Huberdeau or Gretzky. It would have to be overtime.
We added czech lion because we don't have Bob and Bobek.
Created by NOXGAMES 2014/2015
Patrick Kane's Hockey Classic
Dominate the ice across four net-busting game-modes; instant action FACE-OFF, thrilling PLAYOFFS, exhilarating WINTER GAMES and the challenging RIVALS SERIES.
Take on all of the internationally acclaimed national teams from around the World, with Patrick himself skating for both Team USA and Chicago. Perform faultless face-offs, slamming slap-shots and perfect poke-checks to bring down even the toughest of nations. Built with the innovative Phoenix™ technology, Patrick Kane's Hockey Classic features incredibly fluid controls and the highly detailed 3D visuals provide an electrifying backdrop to the most entertaining hockey simulation on Android.
Take to the ice right away with the 'no fuss' FACE-OFF mode. Pick your team and opposition from 18 top national teams, set your strategy and hit that puck between the opposition's pipes.
Stakes are high with the finest teams fighting their way to the top in the thrilling PLAYOFFS. Go all in for the win with Patrick Kane playing for Chicago or play for your favourite city from over 40 teams in the greatest puck battle of the year.
Hockey giant Russia is hosting the majestic WINTER GAMES, where 12 teams battle through group and knockout stages with only ONE nation crowned as the winner in the gold medal ceremony - will it be your team?
Your chance to change history, recreating some of the hockey world's greatest moments and rivalries, that are set to challenge your skills with the puck.
Strategize your game and change your strategy on the fly for the optimal team play on the ice. Deliver your shots with the ultimate precision and keep away from the penalty box to annihilate your opposition.
Phoenix™ engine delivers high-poly 3D player models, motion-captured skating animations and instinctive controls for the most complete hockey gaming ever seen on Android. Eye-popping particle effects and cheering crowds lift the atmosphere to new heights for the ultimate hockey experience.
Rack up the Google Game Services-powered ACHIEVEMENTS and collect all KANE CARDS for the ultimate top hockey dog bragging rights. Challenge fellow puckheads to beat your score with Google Game Services, Facebook or Twitter.
McDonald's, the Golden Arches logo and I'm lovin' it are trademarks of McDonald's Corporation and its affiliates, used with permission.
Hockey Nations 2011
Get ready to join in on the ultimate hockey experience with Hockey Nations 2011! Pick your team from 18 international teams or play as your favorite team from anywhere around the World by customizing any of the 40 available city teams.
Jam-packed with hockey action across 6 game modes from practice mode to World League, Hockey Nations 2011 will turn any puckhead into an international ice warrior of all time.
Puck is dropping – what are you waiting for??
USA, Canada, Finland, Sweden, Denmark, Norway, Germany, Austria, Switzerland, France, Latvia, Czech Republic, Belarus, Slovakia, Slovenia, Great Britain, Japan and Russia.
Now you can customize the city and the team name to match your favorite team from anywhere in the World and bag the trophy from the Playoff Cup.
Dive into the action with 6 game modes including World League, Go for Gold, Shootout, Exhibition, Playoff, and Practice.
You asked for it and now it's yours! Gloves are off so fight your way into the penalty box for a cooldown.
Enjoy the sleek 3D graphics and realistic motion-captured animations. Intuitive controls let you dive into the game without complex tutorials.
Choose and change your strategy on the fly to suit your play, including pull goalie.
FOLLOW US: twitter.com/distinctivegame
FIND US: facebook.com/distinctivegames
Bonecruncher Soccer, Dead Runner, Rugby Nations 2010, Heli Rescue and Pool Ninja.
Virtual Table Tennis 3D
* Intense Ping Pong action
* 30 levels across 3 difficulty settings
* 3D rendered table tennis environments
* Intuitive touch screen controls to control your game of ping pong
* Vibration force feedback
Please rate the game if you like it. Positive feedback will help support development. Thanks!
To buy the ad-free version, search for "Virtual Table Tennis 3D Pro"
Dynasty Hockey
Incredibly Realistic Games
Play hockey games using our advanced, real-time simulation. Compete against a massive online universe of hockey fans or take on some of the greatest historical hockey teams from yesterday and today. Join daily leagues to earn valuable rewards, feature unlocks, and team advancement.
2000+ Real-Life Players
Use daily drafts and free agency to acquire real-life hockey players for your team. Enhance your roster by making savvy line adjustments, training players, hiring coaches, adding skill bonuses, and achieving statistical milestones.
Build a Dynasty
Advance to the Legends levels to get access to hockey's all-time greats. Sign these Hall of Famers and build your team into one of the greatest dynasties in the history of the game.
Lace 'em up!
3D Bowling
Be the world's best player in 3D bowling game. How many consecutive strikes can you score?
Game Features:
- Stunning 3D graphics
- State-of-the-art 3D physics engine for real pin action
- 5 outrageous bowling scene
- Multiple bowling balls in each scene
- Detail stats tracking
How to Play:
1. Drag the ball to the left or right to position the ball for your throw
2. Flick the ball with your finger to bowl
3. Gesture a curve the screen to throw a hook ball
Notes: The permissions required in this game is only used for online leader board. Thanks.
Hockey Nations 2010
Hockey Nations is the first full scale 6 on 6 Hockey game for your Android phone.
Touchscreen and keyboard controls.
Update: Touch-controls & bug fixes
Bob and Bobek: Ice Hockey
The game is an attractive arcade ice hockey with a multiplayer function for more players on mobile and tablet devices. Shoot goals! Pass through an intensive training, move zigzag, take a puck, combine your play and shoot accurately!
Hockey game with Bob and Bobek, official mascot of IIHF World Championship 2015. Become a national hero of your country after you will win The Ice Hockey World Championship of 2015.
• The game has characters Bob and Bobek from famous author Mr. Vladimir Jiranek.
• The game with the official mascots of The Ice Hockey World Championship of 2015.
• Multiplayer with any person gaming on the internet.
• Easy and intuitive game control.
• Entertainment, action, fouls, shots to a cage and goals ...
• Optionally selected teams from 16 countries of Ice Hockey World Championship.
• Every team has their own specific attributes to improve.
• Training levels.
• Tournament mode, play-off for a gold medal with Bob and Bobek.
• Ambient sound from a real stadium.
Ice Rage: Hockey
• Single-device multiplayer for 2 people
• Awesome 3D graphics
• Tournament mode: Can you defeat the legendary Skar?
• Over 2 million players can't be wrong!
• The best single-player Hockey game around.
4/5 "Ice Rage is an excellent game." - androidheadlines.com
4/5 "If you find that you don't have a lot of time for games, Ice Rage might be ideal for you. " - talkandroid.com
"If you're looking for a simple, frantic hockey game for one or two people, look no further than Ice Rage." - androidspin.com
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FOLLOW US: http://twitter.com/herocraft
WATCH US: http://youtube.com/herocraft
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© Original developer Mountain Sheep, porting and publishing Herocraft, 2015.
Hockey Fight Pro
Are you a diehard hockey fan? Do you have what it takes to step on the ice? Drop the gloves and test your skills in this unique 3D hockey fighting game!
The game is rough and the stakes are high. Fueled by pride or desperation, when it's game time, nothing else matters. Once the players are ready to engage, they are bound for an altercation. Hockey Fight Pro is the only hockey fighting game available on the Android Marketplace. Real hockey fighting! Can you handle it? *Not recommended for the light-hearted.
Using an intuitive control system, fight your opponents on the ice by executing punch combinations and unique combos.
Complete the tournament mode to fight against 9 of the world's most dangerous hockey fighters.
Fight against any opponent to improve your skills and practice your combos.
Post your results on Facebook and Twitter to claim your fame and expose your achievements.
Customize and upgrade your character's attributes to improve their skills.
Complete 14 unique achievements while gaining additional respect points. Complete the game to unlock a special "hardcore" mode.
Stunning 3D graphics using the multi-touch capabilities of your device to simulate an authentic hockey fighting experience.
Submit your career stats to a global cross-platform leaderboard and become one of the world's toughest hockey fighters. The top 100 positions are also displayed on the official Hockey Fight Pro game website.
•The only 3D hockey fighting game available on the market.
•Intuitive controls for a realistic hockey fighting experience.
•Follow the interactive tutorial to learn the basics.
•Real-time damage system, see your opponent taking punishment.
•Next gen 3D graphics with HD support.
•Fight against 9 of the world's most dangerous hockey fighters.
•Execute over 40 unique combos and punch combinations.
•Gain respect from your opponents and upgrade your character attributes.
•View your fighting stats and replay highlights to improve your skills.
•Complete a list of over 14 unique achievements.
•Online global cross-platform leaderboard to become the world's toughest hockey fighter.
•Share your victory with your friends on Facebook and Twitter.
•Complete the game to unlock a special hardcore mode.
•Support for multiple profiles and extensive game options to adjust the game to your preferences.
•Compatible with all Android based phones and tablets running a resolution of 800x480 or higher.
In praise of the tough guy. hockeyfights.com provides an outlet for fans to follow their favorite old school hockey players, past and present.
SUPPORT: hockeyfightpro.com
VISIT US: Ratrodstudio.com
FOLLOW US: twitter.com/ratrodstudio
Hockey Nations 2011 THD Demo
Full version features:
By incorporating improved skin meshing, specular maps, and increased polygon count on player models, Hockey Nations 2011 THD is the most visually enhanced version of the game on any mobile platform. Distinctive Games took advantage of the NVIDIA® Tegra™ processor even further by adding player reflections on the ice and animated crowd behavior.
These added graphical features continue their mission of bringing the ultimate experience of international hockey to the hands of hockey lovers – first and without compromise.
Pick your team from 18 international teams or play as your favorite team from anywhere around the World by customizing any of the 40 available city teams. Jam-packed with hockey action across 6 game modes from practice to World League, Hockey Nations 2011 THD will turn any puckhead into an international ice warrior.
NVIDIA® Tegra™ Enhancements
Specular maps on players, reflections on ice, increased polygon count, improved skin meshing and animated crowd behavior.
18 International Teams
USA, Canada, Finland, Sweden, Denmark, Norway, Germany, Austria, Switzerland, France, Latvia, Czech Republic, Belarus, Slovakia, Slovenia, Great Britain, Japan and Russia.
40 Customizable City Teams
Now you can customize a city to match your favorite team from anywhere in the World and bag the trophy in Playoff Cup.
6 Game Modes
Dive into the action with 6 game modes including World League, Go for Gold, Shootout, Exhibition, Playoff and Practice.
Fight it Out
You asked for it and now it's here! The gloves are off so fight your way into the penalty box for a cool down.
Hockey Hysteria
The following nations are included:
Austria (AUT), Belarus (BLR), Canada (CAN), Czech Republic (CZE), Denmark (DEN), Finland (FIN), France (FRA), Germany (GER), Italy (ITA), Kazakhstan (KAZ), Latvia (LAT), Norway (NOR), Russia (RUS), Slovenia (SLO), Switzerland (SUI), Slovakia (SVK), Sweden (SWE), United States of America (USA).
More from developer
Bomber Friends
Collect powerups to get more powerful bombs! Use the explosive bombs to blast your friends from across the map!
And don't worry if you get blasted, then the fun has just begun! Dead bombers can haunt the living players and make their play harder with curses!
Game Features:
- Online multiplayer for 2-4 players! Challenge your friends or play against random opponents.
- Classic Bomberman gameplay, with controls polished for touchscreen!
- Collect powerups and watch out for evil curses.
- Customize your character with cool hats, taunts, and greetings!
- The best bomber man or woman collects the most in-game coins.
- Includes google play achievements and leaderboards.
- Bomber Friends is MOGA-Enhanced! Available at major retailers, carrier stores and online at www.MOGAanywhere.com (Universal game controllers also supported)
Have fun!
*Important message: This game includes in-app purchases. You can set up password protection for in-app purchases in the settings of your Google Play Store app.*
Monster Car Stunts
Collect coins and destroy cars in a beautiful Arizona environment! Enjoy the monster stunt car mayhem, develop your car and get new cars to run with!
Monster truck games have never been this much fun. Perform amazing loops and jumps with the wrecking havoc and destruction of scrap cars in many levels of pure fun and joy.
- 30 fun to play levels.
- 3 cars to play with.
- Upgradable cars.
- Breakable environments, destructable scrap cars, exploding boxes, breakable trailers.
- Moving trucks to jump over.
- Different loops on tracks to have fun with.
- Collectable coins you can use to upgrade the cars.
- Long jumps.
- Powerful monster trucks.
- Challenge other players, using Gumbler.
Ultimate Combat Fighting
- Great fighting action!
- Lots of different opponents
- Develop your character to earn the black belt!
- Find and learn new smashing moves!
- Incredible new swipe based control! Easy to learn, hard to master
- Beat your opponents on many awesome locations!
- Free to play
- A cool mobile fighting game in the style of Street Fighter and Tekken, but also suitable for anybody looking for a casual fighting game
- Log in with Google+ to enable achievements and global leaderboards.
Stunt Car Challenge
Complete the Arizona levels, to open up San Francisco levels! Beware of the trolley cars in San Francisco though.
Finally, you can start destroying other vehicles in the Monster Truck levels!
Now the game comes with sensor control option for the air control!
Version 1.02 has improved Arizona graphics, and 7 new Monster Truck levels filled with fun mayhem!
Stunt Car Challenge 3
Perform amazing stunts with a stunt car! Drive on tracks with jumps and obstacles! Race against a train! Beat the cops in San Francisco! Start playing the fun tracks right now, and challenge yourself to get three stars from all levels!
Complete the Arizona levels, and open San Francisco city and port levels! Beware of the trolley cars and cops in San Francisco though.
Bubbles Touch
The idea is to create a group of at least three bubbles to explode them. Bubbles that are not attached to anything get dropped. Each dropped bubble gives you an extra bubble to shoot! Drop special balls to get extra features like the chainsaw ball!
Game Features:
- Puzzle and arcade mode
- Global high scores
- Precise shooting (tap to shoot, or keep your finger pressed for direction arrow)
- Beautiful graphics and superb gameplay!
Stunt Car Challenge 2
*Destructible muscle cars!
*Loads of fun and challenging tracks with jumps and obstacles!
*Upgrade your car to perform even better!
*Earn coins by doing flips in the air!
*Cool slow-motion jump!
*Fires and destructible tires!
Stunt Car Challenge 2 is the best stunt car game available, with upgradable and destructible muscle cars!
Play different locations across the US, starting in sunny Florida, then on to California, Arizona and Vermont.
Start playing the fun tracks right now, and challenge yourself to get three stars on all levels!
Enjoy the ride with this amazing game!
Slice Ice!
- 165 Levels in eleven different worlds of slicing fun!
- Slice ice in any shape and size!
- Funny and challenging features like exploding penguins, rocks, and angry seals.
- Various achievements and powerups.
How to play:
- Use your finger to slice ice. Keep all the penguins on the same side of the ice. Try to use as few slices as you can, to get more powerups!
Marble Maze - Reloaded
Zombie Smasher!
Cut them, shoot them, blow them , smash them against each other and throw them on bricks wall until they'll know that eating brain is WRONG.
Defend your town against waves of zombies, gain points and spend them to arm yourself with unique arsenal of weaponry and find new ways to kill zombies
*If you encounter any issues please contact us at firstname.lastname@example.com before posting a negative review.
Clown Car Mayhem
Worm Jump
The best game of the Doodle Jump, Abduction and Donkey Jump type of games, with the best features added from Mega Jump and Hyper Jump type of games!
*****This app is supported via search. Please note that the following will be added to your device once you download the app – Search icon, bookmark link and browser homepage. You can delete/replace these search points easily. This is a way to make money from this app and giving it to you for free. The bookmarks permission is needed for the Search-app to add itself to the bookmarks, it is not used for anything else. Thank you for your understanding.*****
Drop It!
Lumberjack Dash
Try to stay on top of the logs in the river!
Avoid obstacles, dodge bridges!
Collect axes to break barrels on your way!
Fly with the friendly eagle to earn more coins!
Collect coins to improve yourself!
Lumberjack Dash is a fun new colorful game in which you are a lumberjack trying to run on top of the logs that are carried by the river. Don't fall to the river, or your run is over.
Fun Features:
Try to avoid sleazy beavers that try to steal your hard earned cash!
Collect total three axes and enjoy being invincible for a period of time!
Escape the crocodiles that try to scare you to slip to the river!
Complete tasks to improve your score!
New Minigame:
Use the right timing, lauch the ball, and win truckload of coins! The Lumberjack game now has a brand new pinball minigame, that you can play using your collected coins. The minigame plays like the pinball (without paddles) or pachinko game. You can use the gauge button or horizontal swipe to send the ball through the port and win more coins. You can open total three different pinball tables if your high score in Lumberjack game is good enough.
Hamsterlings is a Lemmings like puzzle-platformer with a little twist in it. Guide the hamsters through 140 levels of fun and surprises. Jump over obstacles, build bridges, watch out for spiky cactuses, and much more!
- Simple and fun controls: tap a hamster to jump or to use a collected item!
- Fun and Interactive environments! Almost everything can be tapped!
- Cute and funny hamsters!
- A total of 140 levels: 60 for free, and an additional 80 that can be purchased.
- Contribute your achieved stars to a global star counter to help us get 1 million stars!
- Google Play Achievements
Have Fun!
Bouncy Nuts
Game Features:
- Four different worlds and over 80 levels to play!
- Original addictive idea!
- Collect stars to earn new shapes to draw to help you on your journey!
- Beautiful graphics and superb performance!


text:
Science Fiction TV series set in space
The Federation freighterOdinhas been disabled by an asteroid. There are no signs of life on the ship, but three escape pods are missing, so the crew of theEnterprisetake a trip to the nearest planet, Angel One, to see if they can locate any survivors. … see full wiki
What did you think of this review?
Science Fiction TV series set in space
A PBS children's TV show that encouraged reading
A TV sitcom
An American television series created by Marc Cherry.


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Your donation to the Foundation is greatly appreciated.
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Click here to find our summer location and contact information...
First SOTA, then SAMi, now iDEA!
learn more and help...
We are moving to Camp 6 for the 15-16 school year.
Find all the forms you need.
The school day will be from 8am to 3:20pm Monday to Thursday, and 10:30am to 3:20pm Fridays in accordance with new state laws.
Thank you!
Learn more about the future of SAMi...
A video of statistics about SOTA and SAMi, produced by SOTA graduate Ryan Lee '14
Equitable access to quality public education.
Hear graduate Greg Smith speak about his time at SAMi.
The mission of the Science and Math Institute is to utilize our neighborhood resources to offer a creactive path of learning which emphasizes human expression through the sciences, mathematics, and arts as central elements in academic achievement and lifelong endeavors.
Science and Math Institute5501 N. Pearl St.Tacoma, WA 98407
District Benchmarks
All School Retreat
SAMi Calendar
PeachJar - Online School Flyers
Faculty Websites
9/2 First Day of School for SAMI and SOTA
11/11 Veterans' Day Holiday, No School
6/7 SAMI H.S. Graduation
SAMi Summer Location
Expanding Innovative Education In Tacoma
New Location for Portables
Tacoma Public Schools
© 2013 Tacoma Public Schools. All rights reserved.