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United States Patent Buckley 1 Apr. 8, 1975 l ELECTRODES FOR AMORPHOUS Inventor:
William D. Buckley, 1035 Kirk Rd.,
Troy, Mich. 48084 Nov. 28, 1973 Appl. No.: 419,633
US. Cl 357/2; 340/173 SP; 357/48;
Int. Cl. H011 19/00 Field of Search 317/234 V, 235 E, 234 L,
References Cited UNlTED STATES PATENTS 3.796.931 3/1974 Maute 317/234 N Primary E.\'aminerStanley D. Miller, Jr.
Assistant ExaminerWilliam D. Larkins Attorney, Agent, or Firm-Wallenstein, Spangenberg, Hattis & Strampel 5 7 ABSTRACT In a semiconductor switch device wherein upon the application of a voltage in excess of the threshold voltage value at least one current conducting filamentous path is formed of relatively low resistance, there is provided one or more electrodes comprising a single crystal of conductive material which has a smooth face contacting the amorphous semiconductor material. The single crystal electrode is preferably formed as an epitaxial layer on a single silicon chip substrate and by a process which includes vapor or sputter de- 9/1966 Lepselter 317/234 L 3/1969 Castrucci et 31.... 317/234 R posimng electrode'formmg mateml preferably 3/1969 Dyre 317/234 v ladmm UP011 the unheated areas of 7/1969 Genzabclla et a1 U 317/234 L con substrate. A subsequent annealing process grows a 24 97 Hayashida eta] 3 7 234 L single crystal epitaxial layer of the deposited pallalO/l97l Neale 317/234 V dium and the silicon on the substrate. The semicon- 3/l 2 an et ul 35 /2 ductor material forming the switch device is then di- Sirrine 6t HI rectly deposited on epitaxial layer 4/1972 Henisch 357/2 10/1972 Neale 317/235 E 10 Claims, 3 Drawing Figures 6 TO OTHER LINES l 24 42 l I nzssr mum r m' %ZQ was: Marci .re/vss SOURCE source sot/Res ext l 7'0 OTHER LIA/ES ELECTRODES FOR AMORPHOUS SEMICONDUCTOR SWITCH DEVICES AND METHOD OF MAKING THE SAME BACKGROUND OF THE INVENTION The present invention relates to electrodes for amorphous semiconductor switch devices particularly of the type which, generally in their most useful commercial form, include as the active switch-forming portion thereof glassy materials of one or more of the chalcogenide elements (sulfur, selenium or tellurium) in combination with various other materials like silicon, arsenic, antimony, bismuth, germanium and the like.
Chalcogenide amorphous semiconductor materials have been used in recent years for the manufacture of two types of switching devices, one of which devices is sometimes referred to as a threshold switch device and the other of which is sometimes referred to as a memory switch device. Such devices are disclosed in US. Pat. No. 3,27l,59l to S. R. Ovshinsky granted Sept. 6, 1966. When a film of such chalcogenide material extends between two suitable ohmic contact-forming electrodes, the application of electrical pulses of the correct energy time profile can cause the structure to display either a high or a low resistance, with a resistance ratio at least from about to 10. In its high resistance or relatively non-conductive state, these devices have resistivities in the range from about 10 to It) ohm-centimeters, and in their low resistance or conductive states they commonly have resistivities in the range of from about 10 to 10 ohm-centimeters.
The threshold switch devices are driven into a low resistance or conductive state by a voltage in excess of a given threshold voltage value and remain in their conductive states until the current flow therethrough drops below a given holding current value. Examples of chalcogenide materials used in threshold switch devices include compositions of (a) 40 tellurium, arsenic, 18% silicon, 6.75% germanium and 0.25% indium and (b) 28% tellurium. 34.5% arsenic, l5.5% germanium and 22% sulfur.
Memory switch devices are driven into a low resistance or conductive state by a set voltage pulse in excess of a given threshold voltage value and remain in their conductive states even after all sources of energy are removed therefrom, and are resettable to their relatively non-conductive state by application of a reset current pulse, as explained in the aforesaid US. Pat. No. 3,271.59 l. The set voltage pulse which sets a memory device-forming material is generally a pulse of milliseconds duration. A reset pulse is a very short current pulse lasting generally less than about 6 microseconds in duration. Memory switch semiconductor materials are vitreous semiconductor materials which are reversibly changed between two stable structural states generally between relatively disordered or amorphous and relatively ordered crystalline states. Their compositions are at the border of the glass regions, and are generally binary compositions of tellurium and germanium with germanium comprising generally greater than 10% of the composition or compositions like this including additional elements of group V or VI of the periodic table. Examples of memory material compositions are (a) 15% (atomic) germanium, 8l% tellurium, 2% antimony and 2% sulfur; and (b) 83% tellurium and 17% germanium.
In both threshold and memory switch devices, a set voltage pulse in excess of a threshold voltage value causes set current to flow in a small filament (generally under 10 microns in diameter). In the memory switch device, the set current pulse which flows in believed to heat the semiconductor material above its glass transition temperature where sufficient heat accumulates under its relatively long duration that upon cessation thereof a slow cooling of the material results which effects crystallization of the material in the filament due to the tendency of the composition involved to crystallize, unlike the threshold switch compositions. The crystallized low resistance filament remains indefinitely, even when the applied voltage and current are removed, until reset to its initial amorphous high resistance condition, as by the feeding of one or more short duration reset current pulses therethrough. Each reset current pulse may heat all or portions of the filament, and portions of the semiconductor material beyond the limits of the filament, to a critical temperature above the glass transition temperature of the material. When a short reset current pulse is terminated, such heated portions cool and returns to a generally amorphous state. As previously indicated, when current flow ceases in a threshold device, the low resistance filament remains in its original amorphous high resistance condition.
Once a threshold or memory switch device has been rendered conductive and has been reset to its initial high resistance condition, subsequent set current pulses will generally flow in the identical location of the first filament, unless the amorphous semiconductor material is significantly modified in some way. The consistency of filament location is a factor in stabilizing the operating characteristics of the threshold memory switch involved.
The nature of the electrode material applied to the amorphous semiconductor material of a threshold or memory switch device must be carefully selected to avoid adverse affects upon the characteristics of the amorphous semiconductor material. For example, an aluminum electrode applied directly to the amorphous semiconductor material of such a switch device can adversely affect the composition of the semiconductor material where the electrode is positive with respect to the semiconductor material because it then diffuses into the amorphous semiconductor material adversely to modify the same. Also, aluminum frequently presents a rough surface to the semiconductor material, and a rough interface between an electrode and an amorphous threshold or memory switch-forming semiconductor material is undesirable because it can produce undesirable hot spots and characteristic variations between desirably near identical threshold or memory switch devices and can promote undesired crystallization of the amorphous semiconductor material. When aluminum outer electrodes or terminals are desired, it has been the practice to separate each of the same from the amorphous semiconductor material of a threshold or memory switch device by an intervening barrierforming layer which was generally a refractory metal like molybdenum which does not diffuse into the semi conductor material. Originally, the molybdenum layer was deposited in a macropolycrystalline refractory metal layer between the aluminum outer electrode, and the amorphous semiconductor material had a tendency to alter the deisred electrical characteristics of the semiconductor material because, while it did not present as rough a surface as aluminum frequently presents to the amorphous semiconductor material, it still presents a surface which is rough relative to amorphous materials.
In accordance with the teachings of U.S. Pat. No.
3,61 1,063, special care is taken in the deposition of the molybdenum or other refractory barrier-forming layer by controlling the temperature of the amorphous semiconductor substrate such that it is deposited in an amorphous state (that is, a state which is not a macrocrystalline and so includes a purely amorphous or quasi-amorphous micro-polycrystalline state where the crystals are of such small size as not to be readily detectable by ordinary crystal structure detecting equipment). With such amorphous barrier-forming layers, the characteristics of the amorphous semiconductor material is stabilized.
As disclosed in co-pending application Ser. No. 396,497 filed Sept. l2, 1973, the use of amorphous refractory metal barrier-forming layers in the electrode structures of threshold and memory switch devices in thicknesses. for example. of 0.23 microns and greater was discovered to be a contributing influence in the bulging or cracking of the electrode layers, which destroyed the utility of the switch devices. It was discovered that the bulging and cracking of the electrodes was due, in part, to'the large stresses applied to the barrier-forming layers of the electrodes during current flow therethrough. These stresses reached damageproducing levels because where relatively thick barrierforming layers are deposited they are placed under substantial stresses due to the low coefficient of expansion thereof in comparison to that of the amorphous semiconductor material. The stresses added by the heating effects of current flow causes the bulging and cracking thereof referred to. This difficulty was alleviated by applying the molybdenum layers in thicknesses of about 0.15 microns or less, or by using specially controlled deposition equipment which can deposit thicker films of the material in a stress or near stress-free state.
it is an object of the present invention to provide a new and improved electrode which is to make direct contact with the amorphous semiconductor material of a threshold or memory switch device as described, and which can be readily formed in thin or thick layers in a stress-free state without any specially controlled deposition equipment.
There has been developed a memory matrix utilizing the non-volatile resettable characteristic of the memory switch device. Such a memory matrix has been integrated onto a silicon chip substrate as disclosed in U.S. Pat. No. 3,699,543 granted Oct. 17, 1972 to Ronald G. Neale. As disclosed in the latter patent, the matrix is formed within and on a semiconductor substrate, such as a silicon chip, which is doped to form spaced, parallel X or Y axis conductor-forming regions within the body. The substrate is further doped to form isolating rectifier elements for each active cross-over point. The rectifier elements have one or more terminals exposed through apertures in an outer insulating layer on the substrate. An aluminum contact-forming deposit followed by a deposit of amorphous molybdenum are formed selectively in and over each aperture by a photoresist masking and etching process. In a similar way, a layer of amorphous memory semiconductor material is formed over each amorphous molybdenum layer and in turn is overlaid by amorphous molybdenum and aluminum layers to complete the formation of a deposited memory switch device at each cross-over point of the matrix. Y or X axis bands of conductive material which are extensions of the upper aluminum electrodes are formed to complete the matrix.
Another object of the invention is to provide a unique electrode for a threshold or memory semiconductor switch device as described, which forms a single layer interface between the amorphous semiconductor layer and exposed doped portions of a silicon semiconductor substrate so as to eliminate the need for both layers of aluminum and a refractory metal layer between the amorphous semiconductor layer and the silicon semiconductor substrate.
A still further object of the present invention is to provide a unique process for applying said single layer of electrode-forming material which interfaces the amorphous memory semiconductor material and said silicon semiconductor substrate which process can be carried out at low temperatures.
SUMMARY OF THE lNVENTlON In accordance with one of the aspects of the present invention, many of the advantages of an amorphous refractory metal electrode for an amorphous threshold or memory switch-forming semiconductor material are achieved with additional important advantages by using as an ohmic contact-forming electrode material a single crystal of conductive material compatible with the switch-forming semiconductor material. Most advantageously, the electrode is a noble or platinum metal containing crystal, most preferably palladium silicide (Pd Si) grown on a silicon chip substrate as an epitaxial layer. Such a single crystal electrode presents an ideal smooth surface contacting the amorphous switchforming semiconductor material and is compatible with, and can act as a single layered interface between the switch device formed by a deposited film of the amorphous semiconductor switch-forming material and a silicon chip or similar semiconductor substrate in which various circuit elements may be integrated by well-known doping techniques.
While palladium silicide has heretofore been suggested for use as a contact terminal-forming material in the apertures of silicon chip substrates of integrated circuits, it was not heretofore appreciated that such palladium silicide contact terminals had a single crystal structure (and in fact may not have been a single crystal terminal because of the process conditions under which they were formed), or was useful as an electrode material for amorphous threshold and memory semiconductor materials. It has generally been thought that to achieve a single crystal from a vapor or sputter deposition of metals requires very special conditions, and that normally such a single crystal deposition is not anticipated.
On pages 507-513 of Volume 14 of the 197i Edition of Solid State Electronics, C. J. Kircher discloses a process for forming contacts of palladium silicide in the apertures of a silicon chip substrate. In the process disclosed therein, palladium is first sputter deposited upon a single crystal silicon wafer heated to 200C, and the deposited palladium is then preferably heated to 500C for 20 minutes. U.S. Pat. No. 3,431,472 granted Mar. 4, 1969 discloses the use of palladium silicide contacts obtained by vapor depositing palladium on a silicon substrate heated to a temperature of 400F and then annealing the same at a temperature of preferably 932F. The advantage in using palladium silicide as a contact terminal on a silicon chip substrate is that the terminal can be readily formed only in the aperture of the substrate without the need for complicated photoresist masking processes, since etchants are available which will etch away the palladium deposit on the insulating layer of the silicon chip substrate without affecting the palladium silicide formed within the aperture of the substrate. However, as above indicated, in neither of these references which disclose the use of palladium silicide as contact terminals on silicon substrates is there any indication that a single crystal is obtained or that palladium silicide contact terminals on the silicon chip substrate has any utility as an electrode for amorphous threshold or memory semiconductor devices.
In accordance with another aspect of the invention, it was unexpectedly discovered that a single crystal palladium silicide epitaxial layer is obtained within the exposed doped region in an aperture of a silicon chip substrate by vapor or sputter depositing palladium thereon at nominally room temperatures, rather than at the much higher temperatures specified in the Solid State Electronics article and in US. Pat. No. 3,431,472 referred to previously. The use of high temperatures is undesirable because it can adversely affect the single crystal formation and the vapor or sputter depositing equipment needed in the process becomes more expensive and difficult to use. By nominally at room temperature is meant that the substrate is not externally heated, although the actual temperature of the substrate due to the bombardment thereof by the materials which strike the same during the vapor or sputter deposition process may heat the same to temperatures above room temperature. To produce a single crystal epitaxial layer of palladium silicide under such low temperature conditions (such as at the nominal room temperature re ferred to) is extraordinary and unexpected. It was also unexpectedly discovered that the single crystal palladium silicide epitaxial layer could be grown to a desired thickness by annealing the same for a short period in an oven at a modest elevated temperature, such as for l0 minutes at a temperature of from 200-300C.
DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates a sectional view through a memory device and a doped silicon chip substrate on which it is formed, together with various switching means and voltage sources for setting, resetting and reading out the resistance conditions of the memory device, all forming part of an .r-y memory matrix system; and
FIGS. 2 and 3 respectively illustrate the voltage current characteristics of the memory device of FIG. 1 respectively in the high and low resistance conditions thereof.
DESCRIPTION OF PREFERRED EMBODIMENT OF INVENTION FIG. 1 shows a memory switch device 1 deposited upon a substrate 2 where it connects to one or more conductive areas on the substrate forming connecting points to any desired electrical circuit. As illustrated, the substrate is a silicon chip (i.e., single crystal) substrate which together with numerous other memory devices (not shown) form an .\'y memory matrix, such as disclosed in US. Pat. No. 3,699,543 where or axis conductors are formed in the body of the silicon chip substrate 2. One of these .r or y axis conductors is indicated by a doped it plus region 6 in the substrate 2, which region is immediately beneath an 11 region 8, in turn. immediately beneath a p region 10. The p-n regions l0 and 8 of the silicon chip 2 form a rectifier which, together with the memory device 1, are connected between one of the cross-over points of the .r-y matrix involved.
The silicon chip 2 has grown thereon a film 2a of silicon dioxide. This silicon dioxide film is provided with apertures like 14 each of which initially expose a p region 10 of the semiconductor material of the silicon chip above which point a memory switch device I is to be located. A unique single crystal inner electrode layer 15 for the memory switch device 1 is grown over each exposed portion of the silicon chip in each aperture 14. As previously indicated, this single crystal layer is most desirably a noble or platinum metalcontaining single crystal such as a silicide of such a metal, preferably palladium silicide. Most advantageously, this layer is palladium silicide grown as an epitaxial layer on the silicon chip.
The active portion of each memory switch device is a layer 16 of amorphous memory semiconductor material centered over each aperture 14 in the insulating film 2a where the memory semiconductor material extends into the aperture 14. The memory semiconductor layer 16, as previously indicated, is most preferably a chalcogenide material having as major elements thereof tellurium and germanium, although the actual composition of the memory semiconductor material useful for the memory semiconductor layer 16 can vary widely in accordance with the broader aspects of the invention. As previously indicated. such a single crystal electrode layer 15 does not chemically react with or diffuse into threshold or memory switch-forming amorphous semiconductor materials and presents a smooth face thereto. Also. it is formed in a stress-free state and in a manner where it occupies only the area encompassed by an aperture 14 without the need of any masking operation.
The memory switch device 1 has applied to the outer face thereof to stabilize the threshold voltage thereof after a small number of set and reset cycles an enriched region of the element which normally migrates towards the adjacent electrode, namely in the telluriumgermanium composition involved an enriched area of tellurium. By an enriched region of tellurium is meant tellurium in much greater concentration that such tellurium is found in the semiconductor composition involved. This can be best achieved by forming a layer 17 of crystalline tellurium upon the entire outer surface of the memory semiconductor layer l6. With the application ofa tellurium layer 17 of sufficient thickness (a 0.7 micron thickness layer of such tellurium was satisfactory in one exemplary embodiment of the invention where the memory semiconductor layer 16 was 1.5 microns thick), the threshold voltage of the memory device l stabilized after about 10-20 set-reset cycles, for the reasons explained in my co-pending application Ser. No. 396.497, filed Sept. 12, 1973. Over this tellurium layer 17 is shown deposited an outer electrode which includes an inner barrier-forming layer 18 of a refractory metal of molybdenum or the like overlaid by an outer highly conductive metal electrode layer 19 of aluminum or other highly conductive metal. The refractory metal layer 18 prevents migration of metal ions from the highly conductive electrode layer 19 of aluminum or the like into the memory semiconductor layer 16. As disclosed in co-pending application Ser. No. 396,497 filed Sept. 12, 1973. the molybdenum barrier-forming layer 18 is preferably deposited in a stressfree state by making the film thin (e.g., about 0.15 microns thick) or by using deposition equipment controlled in a manner to deposit thicker molybdenum films in a stress-free state. The enriched tellurium layer 17 most advantageously extends opposite substantially the entire outer surface area of the memory semiconductor layer 16 and the inner surface area of the barrier-forming refractory metal layer 1 8, so the tellurium region will be located at the termination of a filamentous current path 160 in the memory semiconductor layer 16 no matter where it is formed, and so it makes an extensive low resistance contact with the refractory metal layer 18. The tellurium layer 17 also lowers the overall resistance of the memory device 1 in the conductive state thereof,
The outer electrode layer 19 of aluminum or the like of each memory switch device in the matrix, which may be 2 microns thick to act as a good heat sink, connects to a deposited row or column conductor 23 deposited on the insulating layer 2a. Each n plus regions like 6 of the substrate 2 forms a column or row conductor of the matrix extending at right angles to the row or column conductor 23. Each row or column conductor like 23 of the matrix to which the outer electrode layer 19 of each memory switch device 1 is connected is coupled to one of the output terminals of a switching circuit 32' having separate inputs extending respectively directly or indirectly to one of the respective output terminals of set. reset and readout voltage sources 24, 26 and 30. The other terminals of these voltage sources may be connected to separate inputs of a switching circuit 32" whose outputs are connected to the various n plus regions like 16 of the matrix. The switching circuits 32 and 32" effectively connect one of the selected voltage sources 24, 26 or 30 to a selected row and column conductor of the matrix, to apply the voltage involved to the memory device connected at the crossover point of the selected row and column conductors. (In the alternative each of the set, reset and readout voltage sources 24, 26 and 30 can be replaced by separate voltage sources which produce voltages which are switched separately to all or selected row and column lines so all memory switch devices in a given row or column can be simultaneously set, reset or interrogated for a readout operation.)
In the reset state of the memory switch device 1, the memory semiconductor layer 16 thereof is mostly amorphous material throughout. and acts substantially as an insulator so that the memory switch device is in a very high resistance condition. However, when a set voltage pulse is applied across its electrodes, which exceeds the threshold voltage value of the memory switch device, current flows in a filamentous path 160 in the amorphous semiconductor layer 16 thereof which path is heated above its glass transition temperature. The filamentous path 16a is generally under microns in diameter, the exact diameter thereof depending upon the value of the current flow involved. The current resulting from the application of the set voltage pulse source is generally well under 10 milliamps. Upon termination of the set voltage pulse because of what is believed to be the bulk heating of the filamentous path and the surrounding material due to the relatively long duration current pulse and the nature of the crystallizable amorphous composition of the layer 16, such as the germanium-tellurium compositions described, one or more of the composition elements, mainly tellurium in the exemplary composition previously described, crystallizes in the filamentous path. This crystallized material provides a low resistance current path so that upon subsequent application of the readout voltage from the source 30 current will readily flow through the filamentous path of the memory switch device 1.
The high or low resistance condition of the selected memory switch device 1 can be determined in a number of ways, such as by measuring the voltage across the memory switch device 1 where the readout voltage source 30 is a constant current source, or, as illustrated by providing a current transformer 43 or the like in the line extending from the readout voltage source 30 and providing a condition sensing circuit 43 for sensing the magnitude of the voltage generated in the transformer output. If the selected memory switch device 1 is in its set low resistance condition, the condition sensing circuit 43 will sense a relatively low voltage, and when the selected memory switch device 1 is in its reset high resistance condition it will sense a relatively large volt age. The current which generally flows through the filamentous path of the selected memory switch device 1 during the application of a readout voltage pulse is of a very modest level, such as l milliamp.
FIG. 2 shows the variation in current flow through the selected memory device 1 with the variation in applied voltage when the memory switch device is in its relatively high resistance reset condition, and FIG. 3 illustrates the variation in current with the variation in voltage applied across the device electrodes when the memory switch device is in its relatively low resistance set condition.
The amorphous memory semiconductor layer 16 can be reset from its relatively low to its high resistance condition by application of one or more reset pulses from the reset pulse source 26 in a manner well known in the art, or as disclosed, for example, in co-pending U.S. application Ser. No. 409,135 on Method and Means for Resetting Filament-Forming Memory Semiconductor Device filed Oct. 25, l973 by Morrel H. Cohen or in co-pending application Ser. No. 410,412
on Method and Means for Resetting Filament-Forming Memory Semiconductor Device filed Oct. 29, l973 by Jan Helbers. When one or more reset current pulses are where:
A=5 to atomic percent B=30 to atomic percent C=0 to 10 atomic percent when X is Antimony (Sb) or Bismuth (Bi) or C=0 to 40 atomic percent when X is Arsenic (As) D= to atomic percent when Y is Sulphur (S) or D=0 to 20 atomic percent when Y is Selenium A preferred composition is given by the following ex- The preferred process for forming the single crystal electrode in the embodiment of the invention shown in FIG. 1 will now be described. First. the desired electrode material is vapor or sputter deposited on the entire substrate without any special operating conditions (i.e., without the need for heating the substrate). The material, such as palladium. will combine with the silicon in the exposed single crystal substrate apertures involved to form a single crystal epitaxial layer which can be increased in thickness when subjected to an annealing operation. The other layers of the switch device, such as the amorphous semiconductor layer 16, the barrier-forming layer 17 and an aluminum layer 19 are then deposited and formed in any suitable well known manner. or by following the process described in copending US. application Ser. No. 264,937, filed June Ill, 1972 on Film Deposited Semiconductor Device of Ronald G. Neale.
As a specific example of the process for growing an epitaxial layer of palladium silicide, palladium (99.98%) was evaporated from a tungsten boat onto an unheated silicon ship substrate placed 7 inches from the source. The evaporation was performed in an oil diffusion pumped vacuum system. Prior to deposition the system was evacuated to approximately 2=l0" Torr. Prior to the palladium deposition the silicon chip was chemically cleaned. An appreciable silicide layer was developed through a subsequent diffusion anneal of the silicon chip at 260C for l0 minutes. Initially, this alloying was performed in an inert atmosphere. However. no detrimental effect was observed when the annealing was performed in air.
Surplus palladium metal was removed from between the substrate apertures by etching in an aqueous solution of potassium iodide and iodine, an etchant which does not attack palladium silicide. If the etchant was deficient in potassium iodide, a dark residue of palladium iodide remained on the silicide. which enabled poorly etched or improperly alloyed contacts to be detected in the optical microscope. The residual palladium iodide was removed with an etchant containing a surplus of potassium iodide. This procedure in turn eliminated the contact variability seen on some of the earlier contacts. The quality of the silicide surface was best revealed by scanning electron microscopy following the palladium removal.
Optimum conditions were determined on l l l plane silicon chips having microns diameter apertures exposing p-type 0.00l ohm-cm boron doped regions. The electrodes were evaluated on a curve tracer for linearity and measurements were also made by the four point probe method of the forward voltage required to drive a current I milliamp through the electrodes. The results of these measurements are shown in the following table:
Palladium Annealing Sample thickness temperature Time Millivolts No. (nm) (C) (min) at l mA 1 I20 200 10 22tl2 2 120 260 10 6.5:l 3 120 300 10 6.5il 4 120 400 10 5.5:[
5 100 260 '10 5.5il 6 100 260 20 62:1 7 100 260 40 6.3il 8 100 260 7.5il
9 50 260 l0 34:25 10 130 260 10 oil. 1 l 290 260 l0 6.9tl
Each of the measurements in the voltage column is an average of 25 electrodes. The palladium thickness was determined from a glass monitor substrate placed alongside the silicon substrate during the deposition. A step was etched in the palladium film and a Sloan Dektak was used to measure the microtopography of the step. The thickness measurements are accurate to approximately 5 percent. All of the electrodes with'the exception of samples 1 and 9 were linear on the curve tracer up to at least l00 milliamps. However, they all exhibited a small asymmetry with voltage reversal.
Samples 1-4 illustrate the effect of increasing annealing temperature. The contact voltage was essentially insensitive to annealing temperature above 260C. The effect of increasing annealing time is'illustratedby samples 5-8. In order to eliminate variations in contact due to variations in the silicon resistivity. samples 5 and 6 and samples 7 and 8 each consisted of two halves of the same chip. There is a general tendency for the voltage to increase with annealing time.
The effect of palladium thickness variations is illustrated by the last three samples. These three together with samples 5 indicate that the contact voltage is insensitive to palladium thicknesses of nm or greater.
As noted above, annealing may be conveniently performed at 260C for 10 minutes in air in a laboratory oven.
Thus. the present invention has provided a highly useful and unique electrode for amorphous threshold and memory switch-forming semiconductor devices, and a method of making such electrodes on a single crystal substrate. While the process of forming a palladium silicide electrode in a single crystal silicon substrate has one of its most important utilities where such electrodes form a single layered interface between an amorphous semiconductor material as described and an electrical circuit element integrated into the single crystalline silicon substrate, the unique low temperature deposition and annealing process aspect of the invention also has application generally in the making of electrical contacts on single crystal substrates like silicon chip substrates as well as a single layered interconnection between a deposited amorphous semiconductor switch device and one or more conductive points in the substrate.
It should be understood that numerous modifications may be made to the forms of the invention described above without deviating from the broader aspects thereof.
l claim:
1. A switch device comprising in combination, a substrate, a glassy film of amorphous semiconductor switch material on said substrate and forming the active switch material of the device. and a pair of spaced apart electrodes in contact with said film of amorphous semiconductor material to form the electrodes of the switch device, the amorphous semiconductor ,material and electrodes contacting one another along a smooth interface, at least one of said electrodes being a single crystal of a metal silicide material which is nonreactive with and is otherwise compatible with said amorphous semiconductor material, said amorphous semiconductor switch material being of relatively high resistance and at least one current conducting path of relatively low resistance being established between the electrodes in response to the application of a voltage to the electrodes above a'threshold voltage value.
2. A switch device as defined in claim 1 wherein said at leastvone conducting path of relatively low resistance of the semiconductor material remains in a relatively low resistance conducting state even though the current therethrough decreases to zero, and realters from said at least one conducting path of relatively low resistance to a relatively high resistance blocking state in response to a reset current pulse applied to the electrodes.
3. The switchvdevice of claim 1 wherein said at least one electrode comprises a single metal silicide crystal layer grown on said substrate.
4. The switch device of claim 3 wherein said substrate is a silicon chip and said single crystal layer is a platinumor noble metal silicide.
5. The switch device of claim 1 wherein said at least one electrode comprises a single crystal epitaxial metal silicide layer on said substrate. the epitaxial layer comprising a deposited metal diffused into the single crystal semiconductor substrate and annealed to increase the thickness thereof.
6. The switch device of claim 1 wherein said substrate is a silicon chip and said single crystal layer is palladium silicide.
7. In an integrated circuit comprising a semiconductor substrate and at least one doped current carrying device-forming region exposed through an associated aperture in an insulating surface on the substrate and a film of an ohmic contact electrode-forming material in said aperture and making electrical contact with the current carrying devices formed by the doped region in said substrate, the improvement wherein there is deposited directly upon said ohmic contact-forming deposit an amorphous semiconductor switch-forming material upon which is also deposited an ohmic contact electrode-forming material having a smooth face contacting the same. said deposit of amorphous semiconductor material being of a relatively high resistance and including means for establishing at least one current conducting path of relatively low resistance between the electrodes thereof in response to the application of the voltage to the electrodes above a threshold voltage value, said ohmic contact electrode in said aperture of said substrate being a single crystal of a metal silicide material which has a smooth face contacting a smooth face of said amorphous semiconductor material.
8. The switch device of claim 7 wherein said electrode comprises a single crystal metal silicide epitaxial layer on said substrate which is a single crystal semiconductor substrate, the epitaxial layer comprising a deposited metal diffused into the singlecrystal semiconductor substrate and annealed to increase the thickness thereof. a a
9. The switch device of claim 7 wherein said substrate is a silicon chip and said single crystal layer is a platinum or noble metal silicide.
10. The integrated circuit of claim 7 wherein said substrate is doped silicon, said single crystal deposit of ohmic contact-forming material in each of said substrate apertures is a single crystal of palladium silicide formed as an epitaxial layer of the associated doped region of the substrate, and said amorphous semiconductor material is a chalcogenide glass having the general formula:
Ge Te X 'Y where:
A=5 to atomic percent B=30 to atomic percent C=0 to 10 atomic percent when X is Antimony (Sb) or Bismuth (Bi) or C=0 to 40 atomic percent when X is Arsenic (As) D=O to 10 atomic percent when Y is Sulphur (S) or D=O to 20 atomic percent when Y is Selenium
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One of the comforting things about our National Parks system is the fact the parks rarely change. While our everyday lives are full of alterations -- be it stores opening and closing, jobs lost and gained, buildings bulldozed or constructed -- the parks are an area on the map where stasis is the norm, where you can return to the same tree decades later and plan on it still being there. Which is why any new trail announcement's a relatively big deal, no matter how short of a distance it goes.
This year, Joshua Tree National Park has started the process of opening up a new trail. If established, it will consist of a modest .7-mile loop that begins and ends at the parking area of Skull Rock, located towards the middle of the park. The trail would essentially be an extension of the current one, but with a separate loop back to the lot. It will also feature a few more scenic vantage points for hikers to admire.
Perhaps most fun of all, the small loop was designed and developed by a summer school class of Morongo Basin GATE (Gifted and Talented Education) students a few years ago. For more information about this new trail -- as well as the history of Joshua Tree and how the new trail will affect the park's vegetation -- head on over to the official release. The public will have 30 days to comment on the proposal.
Last week, the San Bernardino County Department of Public Health put hikers on alert after discovering two ticks infected with Lyme disease. It was the first time since 1991 that ticks in the area have tested positive for the disease.
Here's what you need to know, from the report:
Typical symptoms may include fever, headache, fatigue and a rash resembling a bull's eye that appears near the site of the bite. [A]n infected tick, after burrowing through the skin, usually must be attached and feeding on its host for at least 12 to 48 hours before it can spread the bacteria.
If you're planning on hiking in the area, make sure to apply bug repellent before heading into the woods. It's also vital to perform a tick check upon exiting. If you find a small critter latched on your skin, grab it with a pair of tweezers as close to your skin as possible without jerking or twisting it. (Apparently, some attempt to use a lit match to light the sucker on fire. Don't do that.) If you can, save the tick so that it can be examined.
If you end up contracting the disease, don't panic. Treatment with antibiotics during the first stages of the disease is highly successful. The key is seeking treatment as soon as possible.
The plan was perfect: Due to the unseasonably warm weather, the Snow Summit Bike Park up in Big Bear -- one of the only lift-served mountain bike parks in Southern California -- was all set to open last weekend. But then Mother Nature had to stick her nose in and drop a bunch of snow into the area, postponing the early season. But fear not, young or at least athletically-inclined folks with mountain bikes just rusting away in your garage: The opening day has only been pushed back a week!
For now, the plan is for the park to open for the season this Friday, May 15th. (Stay tuned to the website for more up-to-the-minute information.) The park will stay open for weekends only until June 19th, when the park will be open daily.
Snow Summit offers up more than 60 miles of U.S. Forest Service trails for bikers to use, including the yet-to-be-opened Going Green Trail, which will ultimately allow users of all levels to descend 1,200 vertical feet. (Construction of the trail is scheduled to begin before Memorial Day.) Season passes will run you $299 for adults, $159 for children 5-12. And for the first time, biking enthusiasts will be able to tack on a season pass to Mammoth Mountain Bike Park for an extra $100 for adults and an additional $40 for children.
For more information, head on over to official website.
Gold Bluff Beach in Prairie Creek State Park contains some of the most wondrous views along the California coast. Nestled on a 10-mile stretch of beach within Redwoods National Park and 50 miles north of Eureka, according to its website the park offers "hiking, nature study, wildlife viewing, beach combing, picnicking, a visitor center with exhibits and a nature store." And yes, also the elk pictured above.
There are also 66 different camping sites, 21 of which are designated as "tent only." However, the sites have only been available for use on a first-come, first-served basis, meaning no one was ever 100% sure that a site would be open for them when they showed, particularly stressful during the camp's peak season. Luckily, that's now changed as the campground is taking online reservations during a portion of the year.
Here's the pertinent information:
Starting immediately Gold Bluff Beach Campground is available for reservations on www.reserveamerica.com or by phone at 1-800-444-7275. It will be available for reservations from May 22 - September 6 and will be first come-first serve during the rest of the year. Gold Bluff Beach campground is tent only and no trailers of any kind are allowed on Davison Road.
Reservations can be made up to seven months in advance.
The park is also "crumb clean," and visitors to the park are required -- according to the park rangers -- to watch a video about what this entails. For more information, or to start making your reservations, head on over to the official website.
This guide is part of KCET's California Coastal Trail project, which looks at the state's massive undertaking to build a trail over 1,000 miles in length along its whole coastline.
With its urban waterfront, dramatic bluffs, wetlands, and golden sand, San Diego County hosts more than its share of coastal hikes, with nothing more difficult than negotiating a trail up or down bluffs. Here are some of the county's best, from the shadow of the Tijuana bull ring to the (sometimes) deserted beaches of San Onofre.
Los Angeles has more than its fair share of amazing hikes within relatively easy driving distance, but it's not always easy prioritizing which ones you should visit. In an effort to help out, it's time to detail some of the best. Consider this the start of a hike curating system.
The first on the list is one of my favorites, the 12-mile round-trip through the San Gabriel mountains. It begins at Chantry Flats in Arcadia, where hikers can take a one-mile detour in order to check out the amazing Sturtevant Falls. From there, hikers begin the long 4,200-foot elevation climb to the top of the mountain. The trail is dog-friendly, but hikers should be prepared to share the space with horseback riders and mountain bikers.
Beyond nature, the trail is also full of history. The Mount Wilson Observatory, located at the top of the hike, was once one of the most influential scientific spaces in the country. Created in 1904, the observatory was the site of a wide amount of astronomical firsts: astronomers first measured a star here, scientists found evidence that galaxies existed outside of the Milky Way, and the Mount Wilson telescopes made some of the first detailed observations of Mars. The observatory also houses two historic telescopes -- the 60-inch Hale telescope from 1908, and the 100-inch Hooker telescope from 1917, which was the largest in the world until 1948.
For more information about the hike, head on over to this detailed listing.
Are you a mountain man with a closet full of flannels, a beard down to your knees, and an axe in the garage that's damn-tired of collecting dust? Do you, well, want to be? For either the true outdoors-person or the prospective one, there's no activity to get that blood rushing quite like heading into the forest and getting yourself some firewood. And folks, it's chopping season.
On May 1st, Inyo National Forest opened up their fuelwood season for 2015. The season's scheduled to run through October 31.
This means prospective choppers can head over to one of four ranger stations -- for specific locations and hours, read this -- buy a permit for $15 per cord of wood (with a two-cord minimum purchase, and a six-cord maximum), obtain the map showing which areas are open to cutting, and have at it.
There are, of course, quite a few rules when it comes to cutting your fuelwood. For instance, you can only collect down or dead wood and you can only cut between the hours of 6 a.m. and 8 p.m. If you're using a chainsaw (yes, that's allowed), it must be equipped with a spark arrester. Also, if you are a chainsaw-wielder, be prepared to put that away and use your trusty axe on "shut down days," when fire danger is high.
Read this page for the other rules you'll also need to follow.
This guide is part of KCET's California Coastal Trail project, which looks at the state's massive undertaking to build a trail over 1,000 miles in length along its whole coastline.
San Diego's beaches are an embarrassment of riches: wide stretches of golden sand, endless sunshine, rugged bluffs, and cool green seas. Add those characteristics to huge, nearby population centers, and you can see why it might be a good idea to plan early. Even so, there are numerous options for finding a small slice of this lovely coast to call your own -- if only for a night or two.
For this guide, we've tried to feature only campgrounds with the best coastal sights, sounds, and smells. Many of those places are state-owned because the parks system boasts so much of California's best seaside real estate.
Not surprisingly, the beaches are among the busiest parks in the state. Reservations can be made up to seven months in advance through ReserveAmerica.com. Book as soon as possible because many sites get snagged the day they become available. Cancellations can also free up previously booked sites, so watch for that. Thanks to CampsitePhotos.com, images of just about every individual site are available online, letting you choose a spot in the shade of a sycamore with just the right view.
Unless otherwise stated below, sites permit both tents and RVs or trailers. Some companies deliver RVs directly to campgrounds, making it possible to enjoy a road hotel without the need to pilot one on the highway; rental information can be found on most state park websites.
For better or worse -- probably worse, a lot worse -- it's become a bit of a trend that National Parks are opening earlier this year than ever before. (No rain equals no snow.) Lassen Volcanic National Park -- north of Reno, about an eight-hour drive from L.A. -- is following suit. Why they're opening for the season this year, however, is a little different: They're having a Vehicle Free Day.
This Saturday, May 2nd, starting at 9 a.m., the highway through Lassen will be opened for non-motorized travel only. That means hikers will be able to do some pretty serious hiking throughout the park's roads, if you're so inclined. But probably more importantly, it means that bikers will be able to ride the concrete without having to worry about cars passing by. Think of it like CicLAvia, but in an actual National Park!
While the roads will remain clear of traffic all through the day, the park does recommend completing whatever bike or hiking trip you have planned by nightfall, when the cool night air may create icy conditions on the road. Rangers also recommend wearing layers and bringing sunscreen and a hat, because the higher elevation of the park increases sun exposure.
You'll still need to pay the standard entry fee ($5 per person, walking or on a bike; $10 per vehicle, which will have to be parked once inside) in order to get into the park. And make sure you head over to the official website before heading out, as weather conditions can close the park at any time.
Half Dome in Yosemite is one of the most iconic -- and, therefore, most visited -- pieces of National Park landscape in the entire country. In fact, because of its status as one of the most sought-after natural experiences around, Yosemite rangers have had to cap on the amount of permits that are issued per day for those wanting to make the 14-to-16 mile round trip to Half Dome and back. (And it's not for the faint of heart: It takes most people 10 to 12 hours to complete the journey.)
While the amount of people allowed on any given day is strictly limited, this year hikers will have an extra three weeks to participate in the experience.
That's because, just like nearly every other National Park this year, Half Dome is opening early, folks. While the season usually starts on May 22nd, because of the warm weather and low snowpack this season rangers are opening up the Half Dome operations three weeks early.
Starting this Saturday, May 2nd, hikers can apply for the lottery in order to get the necessary permits to climb. To apply, head over to Recreation.gov and fill out the proper forms two days in advance of your planned trip. And if you are planning on heading to Half Dome, make sure you read the official primer to get a sense of what you're in store for.

subset: commoncrawl


text:
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"Secure in our Identity": Regional Threat and Opportunity in Australian Election Discourse, 1993 and 1996
Article first published online: 13 DEC 2012
DOI: 10.1111/j.1467-8497.2012.01652.x
© 2012 The Author. Australian Journal of Politics and History © 2012 School of History, Philosophy, Religion and Classics, School of Political Science and International Studies, The University of Queensland and Wiley Publishing Asia Pty Ltd.
Australian Journal of Politics & History
Volume 58, Issue 4, pages 542–556, December 2012
Additional Information
How to Cite
Brookes, S. Y. (2012), "Secure in our Identity": Regional Threat and Opportunity in Australian Election Discourse, 1993 and 1996. Australian Journal of Politics & History, 58: 542–556. doi: 10.1111/j.1467-8497.2012.01652.x
Publication History
- Issue published online: 13 DEC 2012
- Article first published online: 13 DEC 2012
Anxiety about the Asia-Pacific region has held an evocative place in the Australian imagination, and has featured in federal elections since Federation. This article explores discussions of regional opportunity and threat in the spoken campaign language of Labor Prime Minister Paul Keating, and his Liberal opponents, in the 1993 and 1996 elections. This language forms part of an ongoing project by Australian political leaders to provide voters with a secure identity by managing regional threat: from extending "civilisation" in the first half of the twentieth century; to the image of Australia as a benevolent stabilising force in an unstable region following the Second World War; and the contested frameworks of engagement and opportunity from the 1980s onwards. While specific constructions of regional threat have changed since federation, leaders' discursive reassurances have remained remarkably consistent over 110 years.


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Bare Escentuals bareMinerals SPF 15 Foundation
102 reviews
52% would repurchase
Package Quality: 3.3
Price: $$$
Package Quality: 3.3
Price: $$$
on 10/1/2013 11:04:00 PM
Age: 44-55
Skin: Normal, Fair-Medium, Not Sure
Hair: Brunette, Other, Other
Eyes: Hazel
Loved this product 8 years ago until fine lines showed up. This product emphasizes fine lines. No primer works for this challenge.
on 9/4/2013 7:48:00 AM
Age: 36-43
Skin: Combination, Fair, Not Sure
Hair: Blond, Other, Other
Eyes: Other
If you get bumps, spots, itchiness, it's down to Bismuth Oxychloride. It's in a lot of eye products, eyeshadows and mineral makeup as it gives the skin that sought after glow. Ask the beauty counter girls if products contain it or read the packaging. Personally, I don't suffer with it and therefore rate Bare Minerals as it gives my skin a nice glow. Great for taking on short-haul flights as it's not a liquid so can carry on board. Using the primer that comes with the Get Started Kit means the powder doesn't cake on the skin. It's SPF 15, waterproof and the minerals found in it (other than Bismuth Oxychloride) helps to increase cell turnover.
For more honest reviews, 'like' me on Facebook Face Up To It, Twitter @YoCalliss, yocalliss.wordpress.com. Thanks :)
on 9/4/2013 5:53:00 AM
Age: 19-24
Skin: Sensitive, Olive, Warm
Hair: Brunette, Straight, Medium
Eyes: Brown
This is pretty awful.
- It doesn't cover anything
- Doesn't look natural, cakes and collects around lines and pores
- Smells chemically - even others can smell it on my skin
- Accentuates all dry areas
- Difficult to apply and takes ages to buff to even a light coverage - very difficult to build up
- Makes me skin feel dry after just an hour of wearing
- So light that when I try to apply bronzer or blusher it comes right off
- Ridiculously expensive for what it is
- After just two hours it had separated horribly around my nose and chin to leave a very powdery flaky mess or makeup. I had to touch it up every hour or so to prevent it from looking so disgusting.
The only good thing about it is perhaps the colour matching, but I suspect that's because it hardly covers anything and therefore there's no makeup to match to my skin tone.
It's supposed to leave my skin feeling like it can breathe but I can feel the makeup on my face like any other foundation. It's light on the skin but feels just like any other makeup.
Maybe I'm not applying it right or maybe my skin is too bad to cover with something so light as I have quite a lot of acne scarring, but even in the unaffected areas it goes dry and clings to any flakey skin or larger pores like crazy.
I'm really disappointed. Waste of money. Unless you already have a lovely complexion and just want a very light makeup it's really not worth buying in my opinion.
/ I'd like to add that it probably is down to Bismuth Oxychloride as everyone has been saying but I found that at the end of the day my skin was unbearably itchy and I was swollen under the eyes. My skin was bright red and it still isn't quite normal. Clearly some kind of allergic reaction- Be careful if you're thinking of buying this product!!
on 6/23/2013 11:02:00 PM
Age: 19-24
Skin: Acne-prone, Olive, Not Sure
Hair: Black, Wavy, Coarse
Eyes: Hazel
Where do I even start? I'll start with its only strong points: photographs well, stays put, and and covers well without caking. Now onto everything else. First off, I got matched to Medium Tan, and I don't know what the hell people are talking about when they say how natural this looks. It makes me look gray, dead, and like I rubbed dirt all over my face. It literally makes my already dark under eye area look like I have two blacks eyes. Yuck!!! If the coloring wasnt so grayish, this would have a lovely finish. Also, my skin is very sensitive and this literally gave me 20 active pimples at one time!!!!!!! 20. And not just little bumps, I'm talking cystic, painful bad boys. It took me a month to undo the Damage from this foundation. I don't know how it keeps winning awards. It's worse than probably any foundation i have ever used. Stay away from this stuff!!!
on 6/4/2013 4:07:00 AM
Age: 36-43
Skin: Normal, Fair, Not Sure
Hair: Brown, Straight, Fine
Eyes: Brown
Today is 6/4/13. I am now adding to this because there are still women out there not reading the ingredients before you put them on your face. You go into any MAC Store in the country you ask them for their big black book they will bring it out & you can go to any single product they have and look up every single ingredient.You can also call 1-800-387-6707 they are the specific people to call with questions about ingredients for any MAC Product.
People don't know that but I do that's how I know the products I can buy, as well as the ones I have to stay away from because of the bismuth oxychloride.
Bismuth Oxychloride can be found in ANY MAKEUP. Powders, foundations, lipstick, blush, eye shadow, lip liner, eyeliner, primer, moisturiser, highlighter,concealer, bronzer, mascara. EVERYTHING that has the word "mineral" in it, if you are don't care about what you're putting on your skin then you're going to get a bad reaction & guess what, plenty of women out there, their skin is damaged for life.
Don't believe me, go online & search it bismuth oxychloride plus skin damage. I am not making this up & I am tired of seeing every other post "it made me break out" "I don't know what it is" "I don't know what happened". Please do your homework, look up the ingredients. I'm trying to help you, so you can educate yourself. This is ridiculous no one working at the counter is going to tell you it's bad for your skin. You have to be responsible.
I go into MAC I have a list of the products I want to look at they pull out the black book & I look thru it. I'm not making anyone wait they can still help other customers. When I know what I want that's when I ask them. Take the lipglasses there is only 1 lipglass that does not contain bismuth oxychloride.
Yes I may be there an hour but you know what the manager came over to me asked me what I was doing so I said do you know what bismuth oxychloride is? She said no and she went on her phone right there and looked it up and said we don't carry that that's not in our products. I said look right here this is only one product, it is in a ton of your products. That's why I have to go through this book because I cannot have anything on my skin with that ingredient.
So I educated her & she told the other girls we're going to have a meeting later to discuss something one of our customers told me. So it made a difference right there. Now they are more aware if people are coming back with products saying I broke out all over, I have red bumps, they're going to know they're gonna look at the ingredients & see if bismuth oxychloride is in it & I bet you 99 to one it is.
All I did was answer a question, now the people that work at the MAC I go to are more educated & I am getting products that will not harm my skin.
Even drugstore brands Revlon L'Oreal Cover Girl Maybelline doesn't matter if it says MINERAL look at the ingredients if you can't see them look it up on your phone or call the phone number on the product. I don't understand how women don't even look at the ingredients. This is YOUR skin you can do permanent damage.This is not just makeup, its your skin.
I gave in & tried bare minerals 4yrs ago when QVC had a special on their Perfect 10 package: foundation, blush, mineral veil, eyeshadows, lipgloss & brushes. As soon as I put it on, my skin itched & burned & I started sweating instantly. It was on my skin 5 minutes. When I washed it off I thought it was done but over the next few days my skin broke out bad & I havent had a zit in over 16 years! I went online to see if anyone else had the same reaction & there are hundreds of women who have, due to the bismuth oxychloride which is made of the same components as ARSENIC & 75% of people in the world, are allergic to it.
Bare Minerals, Sheer Cover are the worst. The old commercials for bare minerals she would say you may feel a warming sensation when you put it on you know what that warming sensation is your skin peeling off! She doesn't say that now.I called in to QVC when they were talking about this product, I told them I had a ? & complaint & they refused to put me on the air! Nobody hears the truth unless you find it for yourself & I did.
There are some mineral makeups that do not include this ingredient like Bee-Lucious, Everyday Minerals, and Jane Iredale but I would advise reseaching all mineral makeup before buying. If I had done my research then I wouldn't be out $60 & more importantly would still have clear skin. UPDATE TO TODAY I do have clear skin again. I am still using MAC products their mineralizing foundation does not contain bismuth oxychloride, the finishing powder that goes over it does so I can't get it. So do your research, find out for yourself what other women have experienced, read for yourself that it's made of the same things as arsenic.
Don't take my word for it find out for yourself then you will know what skin products are safe for you. I truly hope somebody reads this and takes this seriously because otherwise you're just gonna keep asking why did I break out, why did I get the red bumps why do I have cystic acne, & the answer will be in your makeup.
Just empower yourself as a woman, This is something you can take control of and educate yourself so you know what you're putting on your skin. I hope you do.
Website: sterlingminerals.blogspot.com
on 5/9/2013 2:00:00 PM
Age: 19-24
Skin: Normal, Fair-Medium, Not Sure
Hair: Blond, Other, Other
Eyes: Green
I used to use this foundation for years and I absolutely loved it. But a couple months ago they changed the formula and it became TERRIBLE. The container didn't last nearly as long, didn't cover as much. And I kept having to reapply all day. It was as if they put alot more "filler" ingredients in there instead of actual makeup. The color still matched perfectly but the quality of this product has definitely gone downhill. I wouldn't buy this again and I switched back over to Urban Decays mineral makeup. Sad because this used to be a great foundation!
on 3/23/2013 10:57:00 AM
Age: 19-24
Skin: Combination, Fair-Medium, Not Sure
Hair: Brunette, Other, Other
Eyes: Blue
I LOVE this product! It's my absolute must have! I have combination skin, my forehead is often very dry but the rest of my face oily and prone to breakouts, and this product manages to give me good overall coverage, which is so hard to find.
I've read a lot of reviews saying that it causes breakouts, but I can say I have never had a problem, in fact my skin looks a lot better since using this product (I can only think that those people who get breakouts don't take care of their brushes as they should).
My one little niggle is the price- it is expensive (especially when you're a student) but a little goes a long way, so I don't find myself having to buy the product often.
The packaging cannot be faulted in any way- the click system stops any leaks from it, and stops product wastage.
Overall, I will never go back to liquid foundation again! But, for those thinking of buying it- really try to get into a store where a consultant will advise you on colours and which of their products is best for your skin.
on 3/23/2013 12:16:00 AM
Age: 19-24
Skin: Oily, Fair, Not Sure
Hair: Brunette, Other, Other
Eyes: Blue
I used this product for about 3 years and loved it. It covered my blemishes very well and blended in with my skin. However, during the time I was using it, I almost always had some form of acne on my face. Yet, I continued to use this product because it was the only thing that covered the blemishes without looking too obvious. After going off of it for about a week, my skin immediately starting clearing up. As a test to see if the makeup was the culprit behind my breakouts, I decided wear it again for a day. About 2 hours after doing this, I noticed small acne bumps popping up all over my face, especially on my forehead. My old acne lesions also started to flare up soon after I put the makeup on my skin. I'm really bummed that my skin reacts to the makeup this way because I would get so many compliments from people saying that I looked like a "porcelain doll" and that I had perfect skin. I guess i'll just have to keep searching for the perfect mineral makeup that doesn't cause acne.
on 2/7/2013 1:01:00 PM
Age: 25-29
Skin: Acne-prone, Other, Not Sure
Hair: Blond, Other, Other
Eyes: Hazel
I purchased the BareMinerals Matte foundation powder in the shade "light" and it was very yellowy and too dark for my usually beige skin. After applying this product I could feel it on my face, it was very tight feeling. Like I could feel it sucking moisture out of my skin. I didn't use a primer though so use a primer with this for sure. I didn't see anything special with this foundation but I think I would have liked it had I had the right color and a good primer. It did give good coverage. (buildable coverage)
on 1/19/2013 9:04:00 PM
Age: 18 & Under
Skin: Normal, Tan, Not Sure
Hair: Brunette, Other, Other
Eyes: Blue
I should probably start off this review with saying that my skin is not oily or dry, and I've never had acne so my take on this foundation will be different from others that do. I've been using this foundation for about 4 years now and it's AMAZING. I use the shade golden tan, which is perfect for my skin tone. It makes my skin glow, especially with the mineral veil on top, and in summer with the warmth. One thing I don't like is without primer it easily creases into my smile lines. But overall it is an amazing product and I will keep using it until I find something better(probably won't). It is a bit pricey, but one foundation lasts me at least a year because you only need a little bit of product. Another thing is when you're first purchasing, make sure you get the right color because there's a big variety, and if you have golden or yellow skin make sure you get one that says golden in the title, because others will make your face look pink.
Popular Foundations


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Earthquake Shakes Los Angeles
LA fire department begins search for damage and injuries.
Los Angeles Earthquake 20 Years Ago
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Perrin Apartments for Rent
Search Apartments in Perrin
Thanks to MyNewPlace, I knew what to expect from each apartment I planned on visiting even before I left the house, making my apartment search so much faster and easier! - Lafayette,IN
Popular Rentals in the Perrin area
Wabash Landing Apartments
West Lafayette, Indiana, 47906
1 Bedroom$1,085 - $1,300
2 Bedrooms$1,320 - $1,750
Waterford Court
Lafayette, Indiana, 47905
1 Bedroom
2 Bedrooms
Elston Point
Lafayette, Indiana, 47903
1 Bedroom
2 Bedrooms
Salem Courthouse
West Lafayette, Indiana, 47906
1 Bedroom
2 Bedrooms
Why Search With MyNewPlace?
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Apartment Living in Perrin
Finding an apartment in PerrinSome of the most cost effective rentals in Lafayette are in the Perrin neighborhood, and you will find this neighborhood full of friendly people and convenient amenities. Looking for that perfect apartment but have a specific spending limit? No worries - our apartment finder will help you look for that unequaled Perrin apartment for rent that will meet your needs and fit your budget. Browse through the above 'popular rentals' listings in your new neighborhood in Lafayette! Good luck finding your new place!
Want the inside scoop on Perrin? Check out our Perrin Local Talk for local tips and information about Perrin. You can also get answers to your Perrin questions from our local experts by using the "Ask a Question" feature.
Neighborhoods Near Perrin
There are many great communities and cities nearby Perrin to also consider:
- 9th Street Hill Apartments
- Columbia Park Apartments
- Ellsworth Roming Apartments
- Hanna Apartments
- Hedgewood Apartments
- Historic Jeff Apartments
- Monon Apartments
- Saint Lawerence / McAllister Apartments
- Saint Mary's Apartments
- Wallace Triangle Apartments
Cities Near Lafayette, IN
There are many great communities and cities nearby Lafayette, IN to also consider:
- Brownsburg Apartments
- Carmel Apartments
- Crawfordsville Apartments
- Frankfort Apartments
- Indianapolis Apartments
- Kokomo Apartments
- Logansport Apartments
- Nora Apartments
- Plainfield Apartments
- West Lafayette Apartments
Zip Codes Near Perrin
There are many great communities and cities nearby Perrin to also consider:
Featured Apartment Rentals Near Perrin.
- Sagamore Ridge 2501 Soldiers Home Rd. West Lafayette, IN 47906 Phone Number: (765) 463-1116
- Morris Rentals 419 Vine St West Lafayette, IN 47906 Phone Number: (765) 743-4597
- The Fairway 1304 Palmer Drive West Lafayette, IN 47906 Phone Number: (765) 463-3232
- Crestview 270 Littleton Street West Lafayette, IN 47906 Phone Number: (765) 743-1881
- Country Squire 90 Country Squire Court West Lafayette, IN 47906 Phone Number: (765) 463-6276
- Chauncey Village 1651 Chauncey Court North Drive Lafayette, IN 47905 Phone Number: (765) 447-6452
- Cheswick Village 2161 U.S. 52 West West Lafayette, IN 47906 Phone Number: (765) 497-1057
- LAHR Apartments 117 North 5th Street Lafayette, IN 47901 Phone Number: (765) 742-1856
- This 1,121 square foot single family home has 3 be 332 Cheshire Lane Lafayette, IN 47909 Phone Number: (855) 233-2803
- Portledge Commons 500 Portledge Commons Drive Lafayette, IN 47905 Phone Number: (765) 420-9600
Universities Near Perrin
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Get answers about Perrin from local experts or tell us what you love about it.


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Slowly expanding its repetoire, the real-time translation software can now speak six different languages.
The ride-hailing company changes its service and lowers its fees in Frankfurt and Munich to comply with local regulations. It's already agreed to similar alterations in Berlin, Duesseldorf and Hamburg.
Days after violent cabbie protests in France, tension between the ride-hailing service and the authorities continues to grow.
The Mercedes-AMG brand gains a new adherent with the GLE63 S Coupe, a large crossover-type vehicle designed for track performance.
Just as holiday orders peak for the e-commerce giant, more than 2,000 distribution center workers strike in Germany.
New languages are available to Windows Phone developers willing to help Microsoft's voice assistant learn how to better communicate.
Drones have been used to deliver abortion drugs to women in Poland in a protest against Poland's pregnancy termination laws.
The workers argue that Amazon isn't paying them enough, while the company says they're actually paid at the upper level of their grade.
The German car company and team Part Time Scientists partner up to send a four-wheel-drive rover to the moon, where it'll compete for $30 million in prize money.
If you've ever been to Germany, you know it has a higher bar for getting a driver's license than in the US. Brian Cooley shares his top five observations.


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Balance carries Cardinal past Zags
Impressive win gives coach Tara VanDerveer even more to celebrate
STANFORD, Calif. -- Stanford celebrated Tara VanDerveer's 900th career victory Saturday at Maples Pavilion. And coach bought the pizza.
She picked up the tab for everyone. Her players, her staff, even the arena workers who would be staying for the night to work the doubleheader with the men's basketball team.
It was an overdue occasion to honor of the Hall of Famer, who became the fifth women's coach to win 900 games with a victory before Thanksgiving in Mexico. And it was the appropriate ...
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wedding shoes & accessories
Want To Rock Vintage Wedding Style? Read Expert Tips Here!
Vintage wedding dresses are all the rage right now and we can't get enough of them. Intricate lace, Art Deco accessories and heirloom jewelry give an instant elegant feel and are a fun nod to the traditions and fashions of the past. (PS: If you're looking for wedding dress designers with seriously pretty vintage designs,... read more
12 Amazing Statement Necklaces You'll Love!
If you're sporting a simple dress with an understated neckline, a statement necklace is a fashion-forward way to add some shimmery appeal to your wedding look. Consider a sophisticated crystal collar, oversize pearls, or get whimsical with a shooting star motif. Another idea: rich lapis-inspired designs are a great "something blue!" Here are 12 pairs... read more
Save Vs. Splurge: Bridal Clutches
A statement clutch may not be the first thing that comes to mind when you think of bridal accessories, but they're a fun, nifty way to add a personal touch to your look. Plus, they're also a perfect place to store lipstick, bobby pins (and a tissue or two!) at your reception or... read more
Look Of The Moment — New Year's Eve Glamour
It may not be the most traditional choice, but we think a New Year's Eve wedding sounds perfectly fabulous—everyone else is already celebrating, why not throw some more champagne toasts and confetti into the mix? If you're planning New Year's nuptials (or you just want an amazing second dress), consider Naeem... read more
Save Vs. Splurge: Marsala Accents
Pantone took a cue from an Italian cooking wine when uncorking their Color Of The Year for 2015. Marsala, an earthy deep red, gives off sophisticated vibes (after all, it's pretty close to ultra-chic oxblood), and works well with metallics like gold, rose gold and copper. Perfect for a fall or winter wedding, marsala... read more
Save Vs. Splurge: 12 Colorful Statement Heels
A pair of colorful heels are a great way to add a personal touch to your wedding look. Put a new twist on the old "something blue" tradition with a pair of glittery heels in deep navy, or really mix it up with a bright aqua pair. Looking to make a more daring... read more
Look Of The Moment — Enchanted Garden
Flower crowns have been hot for a few seasons, but designer Reem Acra is taking floral accents to a whole new level, weaving blossoms into elaborate tiaras and even sending flower garlands down the runways in the place of belts and wraps. The end result? A perfectly feminine and fashion-forward look that feels bohemian... read more
Not Sure Which Veil To Wear With A Sexy Silhouette? Check Out These Tips!
Let's face it: Bridal fashion has gotten pretty sexy recently, and cut-outs, plunging backs and clingy fabrics rule the runways. Revealing gowns are a great option for the bride who wants to make a daring statement, but a sexy dress can make choosing a veil tricky. Can you wear a traditional veil...read more
Save Vs. Splurge: 12 Stunning Statement Earrings
Whether you're sporting an updo or a simple neckline, statement earrings are a great way to jazz up your wedding look. Opt for art-deco-inspired ones if you're going for a vintage vibe, oversize crystal clusters if you're more into an ultra-glam look, or funky ear cuffs for a modern edge. Another thought: glitzy sapphire drops... read more
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Disney Engagement Rings From Gemvara — Seen Them Yet?04/18/13
11 Disney Wedding Ideas That Aren't Cheesy10/11/13
23 of Our Favorite Wedding Movies01/02/13
Escort cards are extremely easy to personalize and an excellent way to bring in your wedding day colors -- from calligraphed seating cards set atop a textured linen to apples tagged with each guest's name or small personalized bundles of lavender tied off with string. Other ways to display escort cards: Pin them to a clothesline, post them on a board covered in color-coordinated ribbon, or incorporate them into your cocktail hour using personalized stirrers tagged with guests' names.see more


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EXCLUSIVE: "Days of our Lives" Co-Executive Producer, Greg Meng, chats with Soap Opera Network on the renewed success of the soap, how the show has been able to sustain itself for so long with its storytelling, the possibility of slowing down the filming schedule (currently four months ahead of airdate!), a new "DAYS" book ("Days of our Lives Better Living: Cast Secrets for a Healthier, Balanced Life") and much, much more.
- Jim Fung
I love the confidence he expresses in the writing team! They really are getting into the characters and telling both individual stories and overall stories very well.


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Amazon wants to take over your living room
It's not easy to save a lot of money
Join the NASDAQ Community today and get free, instant access to portfolios, stock ratings, real-time alerts, and more!
Benchmarks finished Monday's trading session nearly flat after recovering from day's initial losses caused due to a drop in China's export data and less-than-expected growth in Japan's economy. Also, 'hairline cracks' in Boeing's 787 dreamliners weighed somewhat on the mood. However, a new deal between two of the world's oldest fruit importers Chiquita and Fyffes, and better-than-expected earnings forecast from Alexion Pharma restricted losses.
For a look at the issues currently facing the markets, make sure to read today's Ahead of Wall Street article
The Dow Jones Industrial Average (DJI) lost 0.2% to close Monday's trading session at 16,418.68. The Standard & Poor (S&P 500) edged down 0.05% to finish at 1,877.17. The tech-laden Nasdaq Composite Index declined marginally by 0.04% to 4,334.45. The fear-gauge CBOE Volatility Index (VIX) increased 0.6% to settle at 14.20. Total volume on the New York Stock Exchange was 3 billion shares. Advancing stocks were outnumbered by declining stocks on the NYSE. For 43% stocks that advanced, 54% declined.
Benchmarks slipped on Monday after the General Administration of Customs reported that China's exports plummeted unexpectedly by 18.1% year over year in February. On the other hand, imports climbed 10.1% for the month. This resulted in a trade deficit of $22.98 billion in February.
This fall in export data was in sharp contrast to analysts' expectation of a rise of 6.8%. The decline sparked concerns among investors of a possible slowdown in the world's second-largest economy. The fall in February also came after exports rose 10.6% in January. Also, China had a trade surplus of $31.86 billion in January. This sharp fall in exports in February was said to be due to the weakness in economic activities in China during Lunar New Year holidays.
Separately, Japan said on Monday that its economy grew at just 0.2% in the fourth quarter. This growth in gross domestic product was less than the expected growth of 0.3%.
Major Dow component The Boeing Company's (NYSE: BA ) stock fell 1.3% after it inspected "hairline cracks" in some of its 787 Dreamliner. According to Boeing, this production setback was due to a change in the manufacturing process by supplier Mitsubishi Heavy Industries Ltd. Separately, during the weekend a 777 jet operated by Malaysia Airlines vanished on its flight to Beijing and a Tokyo-bound 787 from San Francisco was compelled to make an emergency landing in Hawaii due to complications arising in the engine.
News on the mergers and acquisitions front was reassuring for the investors. Shares of Chiquita Brands International Inc. (NYSE: CQB ) jumped 10.7% to $12 after it agreed to acquire Irish fruit supply company Fyffes PLC for $559 million to create the world's biggest banana supplier. The combined company is expected to be called ChiquitaFyffes.
Alexion Pharmaceuticals, Inc.'s (NASDAQ: ALXN ) shares gained 7.1% after the biopharmaceutical company raised its 2014 adjusted earnings outlook to a range of $4.37 to $4.47 from a prior range of $3.70 to $3.80.
Six out of ten sectors of the S&P 500 ended in red. SPDR S&P Homebuilders ETF (XHB) led the decline as the sector fell 0.9%. Top holdings from the sector such as DR Horton Inc. (NYSE: DHI ), NVR, Inc. (NYSE: NVR ), Lennar Corp. (NYSE: LEN ) Ryland Group Inc. (NYSE: RYL ) and Lumber Liquidators Holdings, Inc. (NYSE: LL ) plunged 2.9%, 1.4%, 2.4%, 2.6% and 1.2%, respectively.
Among the advancing stocks, Health Care Select Sector SPDR (XLV) led the gains as the sector rose 0.4%. Key stocks from the sector such as Johnson & Johnson (NYSE: JNJ ), Gilead Sciences Inc. (NASDAQ: GILD ), Amgen Inc. (NASDAQ: AMGN ), Bristol-Myers Squibb Company (NYSE: BMY ) and Biogen Idec Inc. (NASDAQ: BIIB ) gained 0.1%, 0.8%, 2.6%, 0.6% and 2.8%, respectively.
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Mar 10, 2015
NICOSIA [MENL] -- Iran has acquired what was described as an advancedindigenous destroyer.
Sep 09, 2013
TEL AVIV [MENL] -- Israel has reported the discovery of offshore crude oil.
Aug 01, 2013
JERUSALEM [MENL] -- Iran has been increasingly concerned over strategiccooperation between its neighbor Azerbaijan and Israel, a report said.
Jul 30, 2013
WASHINGTON [MENL] -- The United States must increase vigilance over Turkeyamid development energy resources in the eastern Mediterranean, a reportsaid.


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EarthBound and EarthBound Beginnings are both available on the Wii U eShop, and some of you may have already bought both titles. But for those of you who have been holding back, no matter what your reason, I have a brief message for you: do it. Don't let your dreams be dreams. Just do it.
In all seriousness, you really should finally take the plunge—there's a reason that fans of the series will never, ever, ever, ever stop talking about how wonderful it is. And you owe it to yourself to see what that kind of love is all about. Head inside to keep reading; there are plenty more reasons to buy the EarthBound games today.


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Get the Best Priced Audi Q7 Heater Core
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Audi Q7 Replacement Heater Core Information
Search our online heater core catalog and find the lowest priced discount auto parts on the web. We sell wholesale to the public. We offer high quality new, OEM, aftermarket and remanufactured Audi Q7 Heater Core parts. We specialize in a wide-variety of high-quality car parts and accessories for your car, truck or SUV. Call toll free to order or place your order online via our secure checkout system. Our online parts catalog uses real-time inventory, so you can be assured the parts you buy are in stock at the time of ordering. Most orders are shipped the same day. They are available for the following Audi Q7 years: 2014, 2013, 2012, 2011, 2010, 2009, 2008, 2007, 14, 13, 12, 11, 10, 09, 08, 07. This part is also sometimes called Audi Q7 Heater Cores. We stock heater core parts for most Audi models including A4 Quattro, A6 Quattro, A4, 100, S4, Coupe Quattro, 100 Quattro, 4000 Quattro, Allroad Quattro, Cabriolet, Quattro, 90 Quattro, 90, S6, 80, Coupe, 200 Quattro, 80 Quattro, 200, 5000 Quattro, TT, 4000, 5000, V8 Quattro, A6, TT Quattro, A3, RS6, RS4, Fox and 100 Series.
We stock these Heater Core brands for the Audi Q7: Nissens.
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the shipping was very quick and i received the right items. i am very happy from my purchase and will buy from partsgeek again. thank you
The service was great. Parts were delivered ahead of schedule. 100% satisfied.


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Video Games
Silent Hill is played from a third-person perspective, viewed from both fixed and moving camera angles.
Additionally, the supported Dual-Shock controller pulsates in a heartbeatlike fashion whenever you're moderately or seriously injured.
Video game console
Video Games
Scifi RTS game by blizzard
Fifth release in the Super Mario video game series


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Kamaole Beach #1 is just across from Kihei Akahi 1Bd/1Ba Great Rates!!
From $99 / night
Description from the manager
Description from the manager
Bedrooms: 1/
Bathrooms: 1/
Sleeps: 2/
Type: Apt. / Condo
Kihei Akahi is just across from Kamaole Beach #1 and it is moderately priced. Each unit has a private lanai, washer and dryer, AC in the living room and ceiling fans throughout. It also has Cable TV/DVD players and high speed internet service. The kitchen is fully equipped.
There are also 2 pool areas with gas grills and a tennis court for your use. The parking is free and it is in walking distance to shops and restaurants. Kihei Akahi is surrounded by lush tropical landscaping.
Kihei Akahi C 217 is a newly and completely remodeled 1 bedroom 1 bath gorund floor unit that can sleep 2. There is a king bed in the master bedroom. There is a fully ...Read more
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Kamaole Beach #1 is just across from Kihei Akahi 1Bd/1Ba Great Rates!! Kihei, Hawaii
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News & Events
Programmers Manual
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We have started the Open Seismic Repository. In the OSR, free and public datasets are and will be made available. To find this Open Seismic Repository click the button:
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Obituary: James Brannigan, 54
James Brannigan, a well-known executive in the audiobook industry and former president of the Audio Publishers Association, passed away on June 29 after a brief illness.
Obituary: William D. Farley (1931-2015)
The founder of Seattle Mystery Bookshop in Seattle, Wash., died on Sunday, June 28, just days before the bookstore will celebrate its 25th anniversary on July 1. He was 83.
Obituary: Avin Mark Domnitz (1944-2015)
Former American Booksellers Association CEO Avin Domnitz died of cancer on June 27. During his tenure he advanced the cause of independent booksellers, creating Book Sense (now IndieBound) and Winter Institute.
Obituary: Judith St. George
Award-winning children's author Judith St. George, widely known for her many titles drawing on events and figures of American history, died in her home in Bloomfield, Conn., on June 10.
Margaret Richardson Obituary
Red Wheel/Weiser sales manager Margaret (Meg) Richardson died on Friday, May 8, 2015, after a brief battle with cancer.
Obituary: Marcia Brown
Author-illustrator Marcia Brown, the much-lauded recipient of three Caldecott Medals and six Caldecott Honors, among other accolades, died on April 28. She was 96.
Obituary: Courage Books Publisher Donald H. McGee, 76
Donald H. McGee, former president and publisher of Courage Books, an imprint of Running Press passed away in Sarasota, Fla. on April 20.
Obituary: Jonathan Lanman
Jonathan Lanman, longtime children's book editor and former v-p and editorial director at Atheneum Books for Young Readers, died on April 19. He was 62.
Twin Cities Bookseller Dan Odegard Dies
Dan Odegard, who co-founded St. Paul's Odegard's Books in 1978, died of plasma cancer Tuesday. Odegard's was regarded as a Twin Cities literary icon until it closed in 1992. Odegard also served as director of trade publishing at Hazelden Publishing from 1995-1998.
Obituary: Doris Bass, 86
Doris Bass, former director of marketing at Scholastic, died on March 30. She was 86.
Looking for more stories? Browse Archive


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