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Embroidery digitizers are in charge of operating embroidery machinery to complete projects, working from electronic documents to create art based on job requirements. They interact with other digitizers in a team setting and share important information regarding embroidery settings and characteristics. They also communicate with clients to determine specifications and other related design information.Read More...
The embroidery digitizer's main duties also include maintaining inventory, determining the size and arrangement of illustrative material and words, and creating layouts based upon available space, visual design, and production requirements for embroidery and screen printing. Embroidery digitizers also order supplies as needed, participate in work meetings to suggest changes to the digitizing process, and modify and proof existing design files for embroidery and screen print production. They report their progress to the embroidery supervisor or manager in their department.
A bachelor's degree in graphic arts, design, or a related field is typically required for this position. In addition, previous experience in a digitizer capacity is generally required or preferred. Embroidery digitizers need to be proficient in vector art creation using different computer software packages. They should be proficient with computer design software to modify existing designs to meet organizational standards. Additionally, they must be organized, pay close attention to detail, and be able to multitask in a fast-paced environment.
Median of all compensation (including tips, bonus, and overtime) by years of experience.
Experience and income seem to be closely related; in general, the survey respondents who had worked for more years reported higher incomes. The average inexperienced worker's salary is approximately $26K, and people with five to 10 years of experience bring in more at around $31K on average. Embroidery Digitizers with one to two decades of relevant experience report an average salary of approximately $33K. Seasoned veterans with 20 years under their belts enjoy a median income of $44K.
|Extremely satisfied
Rated 5 out of 5
based on 17 votes.
60 %
40 %
|Medical: 46%
|Dental: 30%
|Vision: 15%
|None: 52%


text:
|191 posts found
Quick Review about the game -
General Discussion « Vanguard: Saga of Heroes
HEHE thx but wat i meant was Mentoring system that was mentioned above. :D
Vanguard goes F2P today!!! Whos coming back?
General Discussion « Vanguard: Saga of Heroes
Certain Class/Race after you hit 20 you can't play them unless you are a premium member or have those race/class unlocked.
Also, plat restriction means nothing in Vanguard unlike it did in EQ2.
When playing vanguard think 2000 EQ1 where you can get to cap and only have 4plat if you are lucky****.
I tried Vanguard a few months ago. Why I stopped and hesitant to come back.
General Discussion « Vanguard: Saga of Heroes
Originally posted by Jaedor
It is because those things are so awesome that the people that acutally values it will play. It is the same reason people went to WoW in the first place. Easy/user friendly and fun PvP. It was like a mix of Daoc and EQ1 together but made easier for the more casual players today.
SoE is and will never follow the main stream suggestions with this game especially with EQ next coming soon.
To be hoenst if everything was F2P in this game and that it was sustained by cash shop accessories items and apperance cosmetic stuff this game would not last. The graphics itself is good but the character designs are from 2007 so I hardly doubt someone is willing to spend 20$ on a apperance item like in EQ2, TERA, etc.
Mounts are good money if everything was F2P but the same people that are complaining about the minor details about the game after the initial release of the F2P model obviously never bothered leveling their character past level 20 before complaining.
Quick Review about the game -
General Discussion « Vanguard: Saga of Heroes
I actually didn't know they had the same system as EQ2. Does the person getting mentored get xp bonus as well? 5% or was it 10%?
Vanguard: Saga of Heroes: F2P Version Officially Launches
News & Features Discussion « General Discussion
Originally posted by Nanfoodle
You obviously don't go out a lot. Going out to eat for dinner cost around 10$. A movie is 10$. A cup of starbucks is 5$... 4-7$ a month a month can beg for more money in 1 hour than that.
Quick Review about the game -
General Discussion « Vanguard: Saga of Heroes
Updated with some tips for the game to ease players that are interested into the game.
Grouping - when, and what's most popular class
General Discussion « Vanguard: Saga of Heroes
If you are interested and have spare time check out my game review:
As for the text, google Vanguard user interface. There are some custom ui that looks nice and I would recommend using.
As for parties as of right now since everyone is starting over/new there is a high chance that you can get into random peoples' party.
Quick Review about the game -
General Discussion « Vanguard: Saga of Heroes
really? I thought it would be super useful since if your friends are in a dungeon for 1-2 hours now and you wanted to catch up to them and join them you can just hop on and be right there?
Quick Review about the game -
General Discussion « Vanguard: Saga of Heroes
So I had nothing to do for the weekend and thought I would give Vanguard a try again. I have played the game once before on trial but didn't get very far because no one wanted to play back then.
This time around the first thing I noticed when I logged back in was a lot of the crashing/random bugs were fixed.
As for character creation, class/race restriction means nothing to me becasue I played DDO and LOTR and I understand company wants to make money so by all means go for it. I was actually quite relieved that they let us try the class/race until 20 to see if we are willing to buy it or subscribe for the game. (never happened in DDO or LOTR.)
This allowed my friends and I to make a ton of characters to see which one we like more and what we are going to stick with regardless if we are going to have to pay 15$ after 20. (My personal philosophy is if I have spent more than 4-6 hours on a game in a 2 week period I won't mind shelling out some money. Because a movie these days are around 12$ where I live and that is entertainment as well.)
Because we haven't "paid" yet, I was asked on my stream that how I felt about equipment/bag/money restrictions.
Equipment Restriction - To be honest, as of right now I don't feel it but, I know for a fact the people that are willing to spend 10$ for "VIP gear every 10 level" has a huge bonus. My buddies and I level just fine and just as fast as most people with the normal gears. I understand from some of the veteran players that I talked to that after level 50, it will be progressively harder for us to clear dungeon without legendary or unique gears. But, according to them it will take me about a month for a new player to get to cap and that is playing A LOT. (Will probably be paying by the time we get to 20 so not much of a problem for us.)
Bag space - This to me is a little bit annoying but not enough for me to start a thread to bash on it. I honestly found DDO bag space to be a lot more restrictive because a GOOD ddo player is usually carrying extra sets of weapon/clickables equipments/accessories/etc. Those type of items along take up 2/4 or 3/4 inventory space. In Vanguard, most of the items you are picking up are NPC trash. We were averaging about 1 town trip evrey 45 minute to 1 hour before our inventory was full. (Not too bad, could be better if we got 6 or 10 more slots.)
Money Restriction - This part cracks me up when people raged about this. I level 7 toons from 1-20 and finally have liek 2 or 3 gold... The cap is at 3 Plat free players which is not obtainable according to some veterans at around 40-45. I have played EQ1 old school and I remember how I was dead poor until cap.
Caravan - I will pay money for this because I personally hate walking through a dungeon "bad experience in EQ1 where I would die trying to run through a dungeon to get caught up to my group." This is restricted to F2P players.
To explain what Carvan is I am just going to quote Gidion because I have never used it - "Its been a while since i used it and i can't even say that its still in game (Cause i just don't know). The way it worked when i used it was, if you have a grp of friends you have one invite them all to a caravan (6ppl limit, same as grp and fellowship) The one who is now leader can head of and travel to anyplace in the world and bind at a bind stone while the rest can be afk. When the other members of the caravan logs in again they will get a choice of spawning at their last location or at the caravan bindstone. I think they put a time limit on how long before you can make that choice 40min i think either logged out or in game im not sure..."
Brotherhood - My personal favor. This system that is not available to F2P players is a system that allows people that have friends/buddies that are a lot more busy than themselves and cannot be on all the time. With a limit of 6 people(group size) If for some reason you cannot play today and your friends had schedule to go grind mobs and level you don't have to worry about falling behind. If you are in a Brotherhood with them it means that you will be able to get the exp that they had gain even if you were not on.
http://www.vanguardthegame.com/game-guide.vm (more information about Caravan and Brotherhood.)
As for building ships/housing restriction - I am on the fence about this because from what most veterans have told me to own one of those things it will cost a lot of $$$ and time and if I am going to be spending that much time and keeping up with the upkeep of a house or a ship I am more than willing to pay a measely 15$ a month or 10$ a month for 3 months.
If I were to rate this game on solo gameplay I would rate it 5/10.
But, if you have friends that you enjoy playing co-op or dungoen crawlers with this game will be close to 9/10.
In most co-op game and dungeon crawlers, the gameplay and "clunkyness" of a character is irrelevant. It is all about downing the boss or name mob or dungeon with your buddies which Vanguard provides in a LARGE world. It took me almost 1-2 hours to just fly around one of the first starting maps on stream to show my viewers.
This game is not meant for people that loves PvP or need consistent updates to the game. It is a game to sit back relax with your friends in.
Also some minor tips -
For people that do not know how to trouble shoot graphics cards or driver issues and are experiencing tons of crash problems please turn down settings to balance or lower. This solves the problems and it will allow you to run the game a lot more smoothly.
Quest Tracker and the Compass on the top center of your map is there for you to navigate to npcs that are not marked.
Drox UI even though it seems to have been out of date it is still functional. (Changes the text so that it is not as ugly or so that people have complained about.) MUCH MORE CUSTOMIZABLE
Google Vanguard Wiki, and look up guides/class/combat to learn about the Finish/Rescue/Counter system. It takes a little bit of getting used to but after you get it, it will enhance your dps quite a bit.
Updated - 8-14
For anyone interested I am currently playing on Telon, ign: Hisoka -lvl 11 psion (main) rest of the characters have been deleted :D
Grouping - when, and what's most popular class
General Discussion « Vanguard: Saga of Heroes
I just started playing with a couple of my friends.
First group quest starts at level 9 on Isle of Dawn. With the new flock of players a lot of people are partying from level 9. And basically ever 5-10 level will be a new dungeon.
As for what is popular, I would say any healer class or bard would be extremely popular and wanted in a group.
If you have any other questions just shoot me a pm on here. :D
(don't know a lot about the game but I am mainly playing for dungeon/raid with my friends so I can help out or look it up for you if needed.)
LF Quality Pay to Play MMORPG
LFGame « General Discussion
Rift sounds like the best bet for you for right now if you are looking to stick to it for a long period.
If you are just looking for a game to fill the time while waiting for other games and don't mind paying I would suggest Age of Conan or Vanguard Saga of Heroes.
Both of these games have great dungeon gameplay.
Vanguard shines more on the PvE/Crafting Aspect
Age of Conan shines on the PvP and Raiding aspect.
Currently both are f2p games with premium membership which is needed to unlock everything.
good luck with whichever games you decide to go with :D
Why not having Raids in GW2 is a GREAT thing.
General Discussion « Guild Wars 2
The numbers from blizzard are the 10% that has cleared the hardest content. Not the players that have done any raiding at all. That is super faulty statistics. If you don't believe me start a new thread in general and ask how many people have had raiding experience.
I have watched most of those videos like I said I actually played the beta but, if they are going with that faulty 10% crap they are really going to be missing out.
You are right now telling me that everyone in the game is going to be equal because content is made for casual players. Which you guys believe is 90% of the population.
I am not going to lie that I believe a lot of people are going to play GW2 but from talking to multiple guilds/random people out of 300 people that I know are playing, 250 of them are playing it for the PvP content which I guess then raiding is irrelevant. Thumbs up to those people but for me personally I love PvE, Crafting, Housing, etc so I am a sucker for sandbox games. So taking Raiding out of a game completely to me is like saying there is one less thing for me to do PvE wise.
Why not having Raids in GW2 is a GREAT thing.
General Discussion « Guild Wars 2
Originally posted by Jagarid
Why not having Raids in GW2 is a GREAT thing.
General Discussion « Guild Wars 2
Originally posted by Jagarid
Why not having Raids in GW2 is a GREAT thing.
General Discussion « Guild Wars 2
I am still up in the air with this mmo and this is my two cents.
After doing the betas and played almost every other game to end game/raid/pve/housing/crafting/etc I have found out what keeps the player around is not the "game" it is 99% the community.
Community though comes in many shapes and form.
High population community - aka WoW, even though you hate 99% of the players you still play it because one your friend plays it, two you like "the pvp ranking/pve progression" /flex e-peen
Low Population - Vanguard,EQ1 - most are tight nit families or friends for over 10 years. They play the game casually or hardcore but as way to keep in touch and relax.
FOTM - was Tera and now this month will be GW2. Look at the dip in population in Tera only after a few months. These type of community consist a large portion of game hoppers which is why probably this forum started. FOTM community are always over hyped and cannot keep their opinions to themselves.
I love how everyone here says end game raiding caters to the elitist and it is just repetitve crap. Well how is BG or WvW pvp not repetitve? Or going Rifts, etc.
Raiding will ALWAYS be important in a game due to the fact that people want to be able to accomplish things that other people can't.
Just like in reality. Would you want everyone to have the same equal standing even though you work twice as many hours as the other guy doing the same job? This equality crap to me makes no sense because if that is true why not go give half of what you own to some random homeless near you?
I agree to whoever said that innovation and progress in gaming world is good because it brings new flavors and choices to the gamers. Not everyone might like the game but there will still be people playing it. Instead of being a fanboy for GW2 or WoW or any other game just keep an open mind and give it a try.
Personally, I love raiding because that is the only time that all of my friends can play together in a game. I usually play with 10 or more people and other than raids in end game contents for games we can never party as 10 or more. Yeah you can argue in Rift you can go do rifts and shit or World bosses, but to us that doesn't feel as close. In those type of events its usually /afk -autoattack. So for the people that are so hyped for the World Content don't be because those type of evnets are going to end up like Tera's Nexus for those that have personally experienced it will know how crappy that system is.
Oh and allt he fanboys about GW2 redid this redid that... not really GW1 was very similar mechanic just on larger scale... And a lot of the concepts/design/mechanic according to an interview i watched from a developer were (responses, critics for other games) that the changes they have made was to cater those responses but if you think about it. Most of the people that are responding to those things are the same fanboys starting threads on here about WoW is the best, GW2 is the coolest new thing ever.
Overall, I enjoyed and respect the gameplay of GW2 but I am not yet a true believer. I will probably wait until christmas myself to buy it because i don't believe it will last the trial of time for PvE. As for PvP as long as they constantly spice up arenas, in tier pvp gear etc that will be like a new mini meta game that people will be willing to log on for.
F2P Changes UPDATED: Devs listened to player feedback
General Discussion « Vanguard: Saga of Heroes
Originally posted by AlBQuirky
Gave it a try sadly i wont be playing,,,,
General Discussion « Vanguard: Saga of Heroes
To be honest I don't get why everyone is so fed up to have to start a thread every where to bash on vanguard. If you listen to the developers and the q/a or even follow the forums. Multiple people have said "vanguard" is not a game for everyone. It caters to older generation public that is patient and is semi nostalgic for EQ1. The F2P model is just a way for SoE to milk more money for EQ next. Since the F2P announcement the Vanguard threads have been going nuts and getting tons of attention.
Yes 90% of the people might rage or complain but if you read this thread alone they have already succedded in gaining at least 10-50 customers that have paid. I myself am willing to also play if I knew people that were interested in this game but everyone seems to be waiting for the "next best thing" (GW2, neverwinter, etc) How many are going to succeed probably none. Every game has flaws and design errors that are not meant to please the public. Find something you enjoy and then enjoy it with your friends and that is the most fun you will get out of the game.
Now to adress the F2P Model.
Minus league of legends which is not an MMORPG it is more a MMORTS.
Every model has major restrictions.
I don't think I have played a F2P that does not require any money to complete end game content.
I have played to cap in AOC, DDO, LOTR, PWI, ALLODS, Runes of Magic. (Every one of those game were F2P but the end game is unbearable unless you paid or had a lot of time to grind daily to Turbine Points.)
ACTUAL F2P games that 99% of the population refuses to play because they are old, chibi, lack of contents, etc.
Ragnarok Online, Eden Eternal, even Tera.
Yes tera cost money to buy the game but as long as you play 10-20 hours a week the game is pretty much F2P. I only paid for Tera for 2 months until the release of Chronoscroll and now my accoutn is paid for till June of 2013 even though I am already done with the game. Even though these games that I just listed is complete F2P but if you are willing to pay money the reward you gain is huge vs people that are playing it F2P.
To OP and everyone that is not familar with SoE. They don't care if people plays Vanguard from day one when it was purchased so what makes you think they will now? Promise of more developers? Promise of more contents? Promise of "f2p"?
I am going to assume OP doesn't play much F2P game. Your point 2., 3., 4., 5. is in most other F2P games one way or the other.
pay to win gear in market
General Discussion « Vanguard: Saga of Heroes
I agree with whoever said that it is like buying xp potions. In a game like vanguard where "open world pvp" does not exists some lvl 20 that spend 50$ is not going to out shine you. Yeah, if you are in a dungeon grouping with this said person you are benefiting as well since he can carry you through the dungeon.
This mechanic just benefits leveling which I find in a way bad for Vanguard since they lack "future contents" but, maybe it is a way of them telling us they are going to dish out tons of new contents in the near future?
We don't know and for people starting threads about going to free to play minus questions please stop.
Play the game then do a full review afterwards.
Looking to start or be part of a noobish guild
The Rusty Nail (General) « D&D Online
i currently just started again on vip basis haven't purchased the new expansion. I don't play alot but I am now lvl 4 rank 18. Going 10star AA build.
I am on Argo server name is Freecss. feel free to add me or shoot me a tell on here and i can add you.
LF MMORPG - Narrow down to 3
LFGame « General Discussion
Thanks for all the input I believe I am going with DDO.
If people are intersted in joining us.
Our schedule will be around 1-2 hours a day. Weekends Maybe more.
Class - still undecided just send me PM on this site I check it daily :D.

subset: commoncrawl


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49 year old man | Snellville, GA, USA | Seeking women 39-53 within 50 miles
Active within 24 hours
Hey there and thanks for stopping by. If...
Hey there and thanks for stopping by. If you're looking for an interesting, out of the box, fun to be around kinda man, here I am. I'm an easy going guy with a great sense of humor who loves to laugh, be playful, and joke around. A positive person who enjoys life and a man with a good heart. My pictures are current and not a selfie taken in the bathroom with my shirt off ;) Living a healthy and active lifestyle is important to me and I'm seeking the same in my partner. I workout daily to stay fit and generally eat well. I'm into traveling and love to be spontaneous and get away for the weekend. I enjoy nice wine and good conversation. I absolutely love the outdoors and enjoy spending time at the beach, the mountains, and being around water. I am very passionate about life. There aren't too many things I don't enjoy and I'm always up for new adventures and experiences. I'm the proud dad of two amazing teens who I love spending time with. In my free time I wear a black leather suit paired with a mask and fight crime... Seeing if you have a sense of humor here. I'm searching for a woman who is smart, funny, likes to laugh often, is spontaneous and enjoys life. Someone with whom I can have a ridiculously happy and loving relationship. Let's be each others best friend, have fun, and experience life together... .
Coffee and conversation , Cooking , Dining out , Music and concerts , Exploring new areas , Playing sports , Travel/Sightseeing , Watching sports , Wine tasting
Auto racing / Motorcross, Baseball, Basketball, Billiards / Pool, Bowling, Football, Inline skating, Other types of exercise, Skiing, Swimming, Walking / Hiking, Weights / Machines
I exercise 5 or more times per week.
I like Cats, Dogs, Exotic Pets, Horses, Other
Some other viewpoint
You'll have to search a bit to find mine =P Whistler BC., Sedona, Vancouver, Colorado, Seattle, our beach house on Hilton Head Island, any mountain getaways, Paris, England, South France, Deals Gap NC., Exploring midtown or anywhere new to me.
Georgia State University, Atlanta, GA
Great smiles, local dives, sushi, wine tasting, nature, sunsets, waterfalls, being spontaneous, good friends, sleeping in on weekends, a warm fire on a cold night, sand between my toes, Spending time with my girl ;-]
Anything outdoors, exploring and discovering new things, supporting our teams, Go Dawgs!, Braves, and Falcons, rock climbing, motorcycles, live music, traveling, spur of the moment getaways, and keeping up with my kids.
Your profile =P
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|6'1" (185cms)
|4'10" (147cms) to 6'0" (182cms)
|Body type:
|Slender, About average, Athletic and toned
|No preference
|Dark brown
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|No Way
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|Social Drinker
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|Have kids:
|Yes, and they sometimes live at home (2)
|Yes, and they sometimes live at home, No, Yes, and they live away from home, Yes, and they live at home
|Wants kids:
|No, but it's OK if my partner has kids
|Probably not, No, No, but it's OK if my partner has kids
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Carnegie Hall Will Start Livestreaming Concerts Next Week
First up: Joyce di Donato, from the World Series.
First up: Joyce di Donato, from the World Series.
Simon Rattle's Berlin Philharmonic is the youngest 132-year-old around.
"A score of many beauties soldered to a questionable premise."
Will an opera about terrorists ever not be timely?
Simon Rattle leads the freshest-sounding 132-year-old around.
"Compared to their forebears, today's divas are dwarf stars, still capable of musical miracles but not of quickening a paparazzo's pulse."
It's marvelous to see the Met's motley armies working in lockstep again.
It's finished — with an asterisk.
The mayor can't de-gentrify hot zones. What he can do is pump city money into middle-class safe zones in Queens, Staten Island, and the Bronx.
Now that the Met's next few seasons are assured, Peter Gelb can get back to making sure that opera matters.
A weekend in the country goes sour in Theresa Rebeck's latest.
He was the rare architect who felt landscape in his bones and whose buildings improve on nature.
There is something depressingly glib about Ban's architectural party trick.
"If that siren mixes with a high-string tremolo, it might actually amplify the beauty."
The same problem keeps cropping up at the Frick.
A Holocaust opera at the Armory.
It's offensive, but apparently not that offensive.
The Philharmonic cements its move into new-music territory.
The new building is maddening precisely because of its fine intentions, but extravagant misjudgments.
After 6,000 concerts.


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I have been interested in genealogy for many years and enjoy researching my tree. I have learned so much about my family history. Find A Grave is excellent for record keeping and viewing grave sites that I am unable to visit.
I'm still searching for a few burial sites of my ancestors, but the top one on my list is my Grandfather, Eldon Bowan Wright. He died in New Hampshire in 1957 and I have never met him. I would love to leave him some flowers. If any one has information, please contact me.
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Bob LaBelle
RE: Email
firstname.lastname@example.com should work. I don't have another e-mail.
Added by
Bob LaBelle
on Apr 25, 2015 8:06 PM
Bob LaBelle
That is the correct email. Can you try again, please.
Added by
Bob LaBelle
on Mar 21, 2015 5:34 PM
Ken McKay Jr
RE: Silas B Carr
We clean so many through the non profit that it is hard to remember. As soon as the snow melts I'll make it a point to check and if i haven't cleaned it yet, I will make it a priority. In thw meantime if you want amd have facebook, you can look up the non profit, The North Shore Cemetery Preservation Project. You can also google that or Ken McKay Beverly and it will come up with all the links to the non profit and the news articles and news video.
Added by
Ken McKay Jr
on Mar 19, 2015 9:38 PM
Bob LaBelle
RE: Aunt Bea Hartman
I would love copies!!
I have very few pictures from the Hartman side and didn't know many of them. My grandmother was the youngest child. Ralph's dad was twelve years older than her and she didn't marry until she was 25 and had my mother when she was 38. By the time we came along, the Hartman cousins were two generations deep. My aunt (9 years younger than my mother) new a lot of her cousins, as a matter of fact, I believe Ralph's niece, Elizabeth (Bob's daughter) was the flower girl at my aunt's wedding.
I guess my grandmother had a lot of pictures but one day she got on a cleaning trip and through them all out, she didn't think anyone would want them. My aunt almost killed her :-)
But she was such a wonderful women you could hold it against her for very long....heart the size of Texas.
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Bob LaBelle
on Mar 19, 2015 7:28 PM
Ken McKay Jr
Silas B Carr
I take care of the veteran stones in the Swampscott Cemetery. If you live in the area, I'll clean Silas' stone in the next week or so. If you want to join me shoot me a message. firstname.lastname@example.com
Ken McKay Jr
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on Aug 08, 2014 4:56 PM
Bob LaBelle
RE: Beatrice Jean Hartman (McKenzie)
Hi Suzy. If are willing transfer Aunt Bea's memorial (I knew her as Bea) I am willing to take it over. Aunt Bea was my grandmother's niece-in-law, making Ralph my first cousin once removed. Ralph's father was my grandmother's brother. Her name was Nellie Mae (Hartman) Newton. I met Aunt Bea a few times, very nice lady. Didn't actually know Ralph, but a number of years ago, while searching for the Hartman's we ended up connecting over the phone (I live in NH but from MA). How are you related to the Ralph?
Thanks again for the offer.
You can e-mail me directly at email@example.com
Added by
Bob LaBelle
on Apr 27, 2014 6:59 AM
Crystal Lewis-Mustard
Send it to email@example.com
Added by
Crystal Lewis-Mustard
on Jun 25, 2013 10:22 AM
Crystal Lewis-Mustard
RE: oops
My 2nd cousin Elwyn found him on an immigrant list once but cant remember where he saw it
Added by
Crystal Lewis-Mustard
on Jun 23, 2013 9:45 PM
Crystal Lewis-Mustard
RE: oops
Yeah its almost like he didn't exist. I'm sure my grandfather had info on him but when my grandfather died his wife threw everything out
Added by
Crystal Lewis-Mustard
on Jun 22, 2013 10:42 PM
Crystal Lewis-Mustard
Oh and by the way I think I sent you a message on another website but didn't realize it was you till just now hehe.
Added by
Crystal Lewis-Mustard
on Jun 15, 2013 10:46 PM
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Hot Gossip
Arnold Schwarzenegger sparks romance rumors with dinner date
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By Kat Giantis
Arnold Schwarzenegger revealed last month that he's still hoping to reconcile with estranged wife Maria Shriver. But dining al fresco with a much younger lady might not be the best way to facilitate such a reunion.
Last Friday in Santa Monica, the former governor and sometime two-timer, 65, was snapped laughing and chatting over a cozy dinner with a blond identified by the New York Daily News as Heather Milligan, 38, a physical therapist who counts several professional athletes among her clientele.
They were also seen the following day driving around Brentwood and grabbing brunch (see pics here).
The two have plenty in common, what with Milligan dedicating her professional life to physical fitness and Ahnuld achieving stardom by lifting heavy objects with his rippling, Mr. Universe-approved muscles.
Another plus: Milligan appears to be discreet. She deleted a birthday tweet she sent to the actor last July, and when the Daily News called her for comment on the hookup rumors, a receptionist at her Westchester, Calif., practice explained, "She's not going to make herself available. She's not going to talk."
Schwarzenegger's 25-year marriage to Shriver hit the skids in May 2011 amid revelations that he'd fathered a son with the family's housekeeper.
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I'm finally here! Let's play!
Thanks @christianheeren so much for an invite! Hope you'll like my first shot - it's especially for you.
And hello everybody else! Can't wait to start posting some amazing pictures and communicate with you, guys. Давайте дружить (:
keyboard shortcuts: ← previous shot → next shot L or F like Z toggle zoom


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Press release from Business Wire
Principal Financial Group Investor Day 2012 Reminder and Webcast Details
Thursday, September 13, 2012
Principal Financial Group Investor Day 2012 Reminder and Webcast Details12:32 EDT Thursday, September 13, 2012 DES MOINES, Iowa (Business Wire) -- Principal Financial Group, Inc. (NYSE: PFG) Investor Day 2012 is right around the corner. The event will take place in New York on Friday, Sept. 21, 2012 from 8 a.m. to 1 p.m. ET. Senior leaders will provide greater detail about our strategy with a focus on how our multi-channel distribution model positions us for growth across our business lines.To register for the event, contact email@example.com. A live video webcast, along with presentation materials, will be available on the company's investor relations website at www.principal.com/investor. Please go to the website at least 10-15 minutes prior to the start of the presentation to register, and to download and install any necessary software. A replay will be available at www.principal.com/investor at the conclusion of the event. For more information, contact email@example.com. About the Principal Financial GroupThe Principal Financial Group® (The Principal ®)1 is a global investment management leader including retirement services, insurance solutions and asset management. The Principal offers businesses, individuals and institutional clients a wide range of financial products and services, including retirement, asset management and insurance through its diverse family of financial services companies. Founded in 1879 and a member of the FORTUNE 500®, the Principal Financial Group has $367.1 billion in assets under management2 and serves some 18.2 million customers worldwide from offices in Asia, Australia, Europe, Latin America and the United States. Principal Financial Group, Inc. is traded on the New York Stock Exchange under the ticker symbol PFG. For more information, visit www.principal.com. 1 "The Principal Financial Group" and "The Principal" are registered service marks of Principal Financial Services, Inc., a member of the Principal Financial Group.2 As of June 30, 2012. Principal Financial Group, Inc.Media Contact:Susan Houser, email@example.com Contact:John Egan, firstname.lastname@example.com


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Greg DeVillers / Forum News Service, Published February 18 2013
Grafton hockey team built around offenseGRAFTON, N.D. – The graduating class of 2012 left Grafton High School with voids to fill on its highly successful athletic teams.
State champion football and girls basketball teams were senior-dominated. So were the state runner-up baseball team and the boys basketball team that placed fifth at state.
But one area that brought a lot back this school year was the offense of the state runner-up Grafton-Park River boys hockey team.
"We graduated a lot on defense and in goal," Spoilers coach Scott Petersen said. "But we had a lot of scorers coming back.
"Any time you get goal scorers back, that's big. It's hard to find the back of the net. We have a lot of kids with that experience, who know what it takes. That makes it a lot easier for a coach."
The offense has led the way. The 13-9-2 Spoilers average 5.4 goals a game. The team takes the East Region's No. 2 seed into Thursday's quarterfinals of the North Dakota state tournament at Ralph Engelstad Arena in Grand Forks. Grafton-Park River plays Bismarck in a first-round game at approximately 7:30 p.m.
Grafton-Park River did graduate its top two scorers in all-staters Austin Campbell and Joey Demers. But seven of the next top eight scorers returned this season.
"It's nice and balanced," senior Cole Rehovsky said of the Spoilers' offense. "We don't feel the pressure of one or two guys having to score for us to win. We have a lot of offensive talent."
Junior Jade Miller leads the way with 25 goals and 22 assists. He's one of six players with more than 15 points, others being Peter Hills (33), Rehovsky (25) Levi Cudmore (20), John Robideaux (18) and Zach Peterson (17). All of them have already surpassed their point totals from a year ago.
Miller, Cudmore and Robideaux skate on the Spoilers' first line, with Rehovsky, Hills and Peterson on the second. The two lines give opponents different looks.
"The first line is more finesse," Petersen said. "The second line is more of a grinder type."
DeVillers writes for the Grand Forks Herald


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17 Things Bad Ass Enough to Have Earned the Name 'Dragon'
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Thanksgiving For Vols Family
Updated: 11/27/2014 - Head Coach Butch Jones stresses the importance of family; including the bonds Team 118 exhibits every day.
Updated: 11/27/2014 - Head Coach Butch Jones stresses the importance of family; including the bonds Team 118 exhibits every day.
Updated: 11/25/2014 - With bowl eligibility riding on their final game of the season, it's only fitting that Tennessee should face their storied rival Vanderbilt as they look for win number six this Saturday. For many, this weekend bears a heavy importance, as the all-or-nothing circumstances surrounding this Vandy matchup could mean the end of their collegiate careers or a memorable, long-awaited bowl appearance.
Updated: 11/24/2014 - Tennessee, a 17-point favorite, can reclaim state bragging rights and become bowl-eligible for the first time since 2010 with a win.
Updated: 11/23/2014 - The Local 8 Sports team and the crew from volquest.com break down the Vols 29-20 loss to Missouri
Updated: 11/22/2014 - Maty Mauk threw a pair of touchdown passes and Marcus Murphy ran for two scores Saturday as No. 19 Missouri defeated Tennessee 29-21 to maintain control of the SEC East race.
Updated: 11/20/2014 - Celebrating his birthday is a bitter-sweet day for the senior QB who prepares for his final home game at Tennessee
Updated: 11/19/2014 - Butch Jones and his staff preach that every member of the Vols should practice as if they were a starter. On Saturday that mantra will benefit Tennessee. Several members of Team 118 are expected to see increased roles when the Vols take on #19/20 Missouri on Saturday at Neyland Stadium.
Updated: 11/19/2014 - The practice report for the Tennessee Volunteers football team for 11-18-14.
Posted: 11/17/2014 - Tennessee freshman defensive end Derek Barnett has been named the SEC Defensive Lineman of the Week. The Nashville native had seven tackles, 4.0 TFLs and 2.0 sacks in the win over Kentucky.
Posted: 11/17/2014 - Coach Butch Jones addressed the media Monday as the team prepares to face Missouri at Neyland Stadium on Saturday (7:30, ESPN)
Updated: 11/16/2014 - The Local 8 Sports team and the crew from volquest.com breakdown the Vols win over Kentucky
Updated: 11/15/2014 - Tennessee (5-5, 2-4 SEC) beat Kentucky (5-6, 2-6) for the 29th time in their last 30 meetings. Kentucky lost its fifth straight overall in a matchup between two teams chasing their first bowl bids since 2010.
Updated: 11/12/2014 - The Vol Report for Wednesday, November 12th.
Updated: 11/11/2014 - Tennessee's sophomore quarterback says he has plenty of room to grow
Posted: 11/10/2014 - Game times have been set for the Vols matchups with Missouri and Vanderbilt
Updated: 11/10/2014 - Head coach Butch Jones announced at his Monday press conference that sophomore wide receiver Josh Smith will be sidelined for the remainder of the 2014 season with an ankle injury.
Updated: 11/10/2014 - Tennessee hosts Kentucky Saturday at 4 pm (SEC Network).
Updated: 11/05/2014 - The VolReport for practice 11-5-14.
Updated: 11/04/2014 - The Tennessee senior quarterback hurt his shoulder in the loss to Ole Miss Oct. 18.
Posted: 11/03/2014 - The Vols will host the Kentucky Wildcats on Saturday, November 15th
Posted: 11/02/2014 - The Local 8 Sports team and the crew from volquest.com breakdown the Vols 45-42 OT win against South Carolina
Updated: 10/30/2014 - UT assistants break down the game against South Carolina.
Updated: 10/29/2014 - Justin Worley's return may still be questionable, but the offensive line is quite confident with their improvement.
Posted: 10/28/2014 - Through eight games, Johnson leads the SEC in tackles with 86 and tackles per game with 10.9, which ranks 14th nationally.
Updated: 10/28/2014 - Tennessee coach Butch Jones said that, "We'll name a starter when we need to, but we're in no rush."


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Slicker than your average
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Bad karma for picking on small and old guys
Bad karma for picking on small and old guys.
DLH picks on Pacquiao, Pacquiao beats the crap outta him
Pavlik picks Hopkins to boost his resume with the name of a legend, because he thinks it will be an easy pay day and the name will look good on his record gets, but he gets thoroughly outboxed and virtually humiliated.
Margarito picks on Mosley, because of the same kinda reasons Pavlik was picking on Hop and he gets whooped good style, allthough bad karma decides that Margarito should get knocked out, because of the handwraps incident
Will Amir be the next ? WAR! Barrera.
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interesting i think amir's going after MAB for his name, he obviously has no titles nor is the same fighter he used to be.
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Points: 10,000,169,535,810.77
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He may not be the same fighter of old, but MAB will likely
beat the living **** out of Amir Khan.....LOL.
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Rep Power: 22
Points: 201,171,150.29
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Innovera® Compatible RG55063340CN (4100) Fuser
Innovera® Compatible RG55063340CN (4100) Fuser
Weights & Dimensions
|Coverage Percent: 0.06 %
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|Global Product Type: Fusers
|Oem/Compatible: Compatible
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About the ManufacturerFrom home offices to medium-sized businesses, customers will find all the Technology Essentials they need from Innovera.
Innovera® Compatible RG55063340CN (4100) Fuser
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8 Easy Sewing Projects for the Home
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Latest Stories from Guest - Page 5
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My first day in India for World Environment Day felt like my first day in high school--minus the braces and far
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A planar interconnect using selective, electroless deposition of a metal such as copper into interconnect channels is disclosed. A first dielectric layer is deposited on the surface of a substrate, such as an integrated circuit wafer. Thereafter, a second dielectric layer is formed on the first dielectric layer. Then a photoresist layer is spun on the top surface of the second dielectric layer. Channels are formed in the dielectric layers by patterning and etching the composite dielectric layers. Silicon atoms are implanted in the bottom of the interconnect channels and then the metal layer is selectively, electrolessly deposited to fill the channels in the first dielectric film, thus forming a level of interconnect. This process is repeated to form subsequent levels of interconnect.
1. A method for forming a planar interconnect level for VLSI devices comprising:
forming on a surface of a VLSI wafer a first dielectric layer having a planar top surface;
forming a masking layer on said first dielectric layer;
patterning said masking layer to define in said masking layer at least one location where an interconnect channel is to be formed;
etching said first dielectric layer at said location through said patterned masking layer to form an interconnect channel in said first dielectric layer;
implanting ions into the bottom surface of said interconnect channel, said ions forming a modified bottom surface of said interconnect channel to receive selective electroless metal deposition;
removing said patterned masking layer; and
depositing copper onto said modified bottom surface of said interconnect channel by selective electroless metal deposition, said deposition continuing until said interconnect channel is filled to a level substantially coincidence with the top surface of said first planar dielectric layer to thereby form a metal interconnect line, said metal interconnect line and said first dielectric layer forming a first planar interconnect level.
2. The method of claim 1, wherein the steps of patterning said masking layer and etching said first dielectric layer produce plural interconnect channels.
3. The method of claim 2, wherein said selective electroless metal deposition fills said plural interconnect channels to form plural interconnect lines.
4. The method of claim 3, wherein said interconnect lines are so positioned that adjacent interconnect lines are separated by a distance of less than 2 μm, said interconnect lines having a low electrical resistance and a high resistance to electromigration and stress migration.
5. The method of claim 1, wherein said planar first dielectric layer is formed by chemical vapor deposition of silicon dioxide.
6. The method of claim 1, wherein said masking layer is comprised of a combination of a photoresist layer and a second dielectric layer, said second dielectric layer deposited on said planar first dielectric layer prior to depositing said photoresist layer.
7. The method of claim 1, wherein said ions are silicon ions.
8. A method for forming a planar interconnect level for VLSI devices comprising:
forming on a surface of a VLSI wafer a first dielectric layer having a planar top surface;
forming a masking layer on said first dielectric layer;
patterning said masking layer to define in said masking layer at least one location where an interconnect channel is to be formed;
etching said first dielectric layer at said location through said patterned masking layer to form an interconnect channel in said first dielectric layer;
implanting metal ions, selected from a group consisting of palladium, copper, gold, and silver, into the bottom surface of said interconnect channel, said metal ions forming a modified bottom surface of said interconnect channel to receive selective electroless metal deposition;
removing said patterned masking layer; and
depositing copper onto said modified bottom surface of said interconnect channel by selective electroless metal deposition, said deposition continuing until said interconnect channel is filled to a level substantially coincidence with the top surface of said first planar dielectric layer to thereby form a metal interconnect line, said metal interconnect line and said first dielectric layer forming a first planar interconnect level.
9. The method of claim 8, wherein the steps of patterning said masking layer and etching said first dielectric layer produce plural interconnect channels.
10. The method of claim 9, wherein said selective electroless metal deposition fills said plural interconnect channels to form plural interconnect lines.
11. The method of claim 10, wherein said interconnect lines are so positioned that adjacent interconnect lines are separated by a distance of less than 2 μm, said interconnect lines having a low electrical resistance and a high resistance to electromigration and stress migration.
12. The method of claim 8, wherein said planar first dielectric layer is formed by chemical vapor deposition of silicon dioxide.
13. The method of claim 8, wherein said masking layer is comprised of a combination of a photoresist layer and a second dielectric layer, said second dielectric layer deposited on said planar first dielectric layer prior to depositing said photoresist layer.
This is a continuation of application Ser. No. 07/660,922, filed Feb. 27, 1991, abandoned, which is a continuation of application Ser. No. 07/450,180, filed Dec. 13, 1989, abandoned.
1. Field of the Invention
This present invention relates to very large scale integration (VLSI) Technology and particularly to a method of forming fully planar interconnections in VLSI devices.
2. Prior Art
As the scale of integration increases and device dimensions decrease, the performance of VLSI chips are limited by interconnection capabilities. For example, VLSI technology for 1-micrometer processes requires a greater control on the materials and techniques that are well beyond that of only slightly larger 2-micrometer processes. While the dimension is scaled in half, the degree of difficulty can increase in the range of 5-10 times. Furthermore, as the number of layers of interconnection increases, even more stringent requirements are placed on interconnection characteristics.
As the device is scaled down, the operating speed generally increases, the component density increases and the power density generally remains constant. However, the current density is also increased and is generally the limiting characteristic for dense high performance devices. Therefore, low resistivity interconnection paths are critical in order to fabricate dense, high performance devices produced with VLSI technology.
Generally, metal conductors have an upper current density limit imposed by electromigration. The term electromigration generally refers to the transport of metal atoms under the influence of current. It occurs by the transfer of momentum by the electrons to the positive metal ions. When a high current passes through thin metal conductors in integrated circuits, metal ions will pile-up in some regions and voids will form in other regions. This pile-up can short circuit adjacent conductors, while the voids can result in an open circuit. The medium time to failure (MTF) of a conductor due to electromigration can be related to the current density and the activation energy associated with the metal conductor used.
Traditionally, aluminum and its alloys are used extensively for metalization and interconnection lines in integrated circuits. Since aluminum and its alloys have low resistivities, this satisfies the critical requirement of low resistance. Aluminum also adheres well to silicon dioxide.
However, the use of aluminum in VLSI with its shallow junctions often creates problems such as junction spiking and electromigration. Experimentally, it has been determined that aluminum has an activation energy value of approximately 0.5 eV for electromigration. This activation energy dictates the upper limit of the current density allowable before breakdown or electromigration effects are observed. The electromigration resistance can be increased by using several techniques, such as including copper, encapsulating the conductor with a refractory metal or incorporating oxygen during film deposition. However, the current technologies using aluminum as the metalization layer generally produce poor reliability and not low enough resistivity interconnect paths for future applications. These two factors create a severe trade off between denser circuits and high speed performance.
As circuit geometries are scaled down to technology limits, the interconnection path usually slows down the operating frequency due to its parasitic capacitance and resistance. Only a few materials can provide better electrical and reliability potentials than aluminum. Due to their higher activation energies of self diffusion, copper, gold and silver generally do not suffer the same problems as aluminum. Of these three metals available for interconnectors, silver is easily corroded. As a result, copper, silver, and gold are natural choices for the interconnection requirements of VLSI technology.
While copper, silver, and gold films may be a natural choice, they are extremely difficult to pattern. Wet etching is not VLSI compatible because it typically causes severe loss of pattern fidelity. On the other hand, copper, silver, and gold are extremely difficult to etch by the current plasma dry etching processes.
Copper, as well as gold, and silver film has an activation energy of self-diffusion considerably higher than that of aluminum, thus permitting them to operate at considerably higher current densities than the aluminum films without suffering from electromigration effects. A phenomena related to electromigration is the stress migration problem. In stress migration, voids or protrusions will form under the influence of external stress such as passivation films or temperature cycles, even in the absence of current flow. Both copper and gold show much higher stress migration resistance than aluminum.
In addition to the electromigration and stress migration problems of aluminum films, most interconnection technology used in VLSI circuit fabrication requires the metal film to be deposited by sputtering, evaporation or chemical vapor deposition techniques. Once the film is deposited, the film is then patterned by lithography and etching. This process has two major disadvantages. First, the patterned metal film generates surface topography, complicating subsequent deposition and lithographic processes. Second, due to the difficulty of deposition and etching, some films with low resistivity and high electromigration resistance such as copper and gold cannot be used.
Therefore, what is required is a process that provides planar topographies in addition to allowing the use of high electromigration and stress migration resistance metals such as copper, silver or gold.
The present invention is directed to a planar interconnect technique based on selective electroless deposition of metal, such as copper, silver or gold. The traditional approach to metalization by depositing, patterning and etching a metal layer usually requires a large number of elaborate planarization process steps to be performed on the wafer surface to restore the planar surface. This is to provide a planar surface for the next layers that will be deposited. Thus, the present invention eliminates the necessity of a separate planarization process. Furthermore, the present invention overcomes the problem of wet and dry etching of metal, such as copper, silver or gold, which currently are difficult to pattern without loss of pattern fidelity.
The present invention avoids this by selectively, electrolessly depositing copper, silver or gold into interconnect channels. This not only reduces the number of fabrication steps involved, but it also produces a planarized surface. Furthermore, the present invention allows the use of copper, silver or gold for interconnect lines. Copper, silver and gold have a high resistance to electromigration and stress migration so that the width of the metal lines plus the width of the space between the interconnect lines can be substantially reduced, as required by very large scale integration (VLSI).
In accordance with the present invention, after completion of the individual devices, an electrically insulated dielectric layer is deposited on the surface of the wafer or other device, to a thickness greater than the desired total thickness of the interconnect line and inter-metal dielectric film. This first dielectric layer is then planarized using any well-known process of planarization. The planarization process provides an upper planar surface and leaves the dielectric layer at a thickness close to the desired total thickness of the interconnect line and inter-layer dielectric film. A contact hole is then patterned in the dielectric layer to provide connections to the substrate. The contact holes or via holes can be partially or fully filled to provide the desired planarity. A thinner, photoresist layer that functions as a mask layer is then deposited on the first dielectric layer. An optional masking dielectric layer, different from the previous dielectric film may be deposited prior to the deposition of the photoresist layer. The photoresist layer is then patterned and etched into the dielectric film to form interconnect channels. If the optional masking dielectric film is present, the upper photoresist layer is then removed, again using any of the well-known methods of removing the upper layer. Silicon atoms or palladium atoms are then implanted into the exposed bottom surfaces of the interconnect channels. After implantation, the photoresist or the masking dielectric film is removed.
After the modified surface, that is the surface at the bottom of the interconnect channels exposed to the silicon atom implantation, has been cleaned, rinsed and activated with the appropriate activation solution, copper, silver or gold metal is selectively, electrolessly deposited in the interconnect channels. The rate of deposition is dependant on the particular deposition solution selected. The process of forming channels and implanting silicon atoms in the bottom of the interconnect channel to facilitate the deposition of the metal lines, as well as the filling of the channels with metal, is repeated to form as many levels of interconnect as may be required, with each layer having a planar top surface to facilitate formation of additional layers without the need to carry out complex replanarization steps.
The traditional process of depositing a metal film and then patterning and etching is not desirable for films such as copper, silver or gold. The need to reduce the size of the interconnect lines must be counter-balanced by the current densities limitations that are characteristic of the current aluminum metal films. The process of the present invention allows copper, silver or gold to be used, and therefore reduces the problem of electromigration and stress migration, as copper, silver and gold have higher activation energies of self-diffusion than that of aluminum film.
Furthermore, the process of selective electroless deposition negates the necessity of having to etch copper, silver or gold, which cannot be satisfactorily wet or dry etched while maintaining pattern fidelity.
Accordingly, the foregoing process has numerous desirable features. First, patterning and etching of a metal layer are no longer required. Second, the wafer surface is completely planar after each level of interconnect formation. Furthermore, the use of a copper, silver or gold metal and its resulting lines exhibit low resistivity and are capable of carrying high current density. Since both characteristics are desirable for VLSI fabrication, the process and structure of the present invention overcomes the problems encountered in the Prior Art.
FIGS. 1-4 illustrate in sectional view the Prior Art fabrication techniques of patterning interconnect trenches.
FIGS. 5-9 illustrate in sectional view, the fabrication steps of patterning interconnect channels and depositing copper or gold in the channels using the present invention.
An invention is described that provides for a fully planar metalization process that advantageously uses the low resistivity and high electromigration resistance characteristics of copper or gold in forming interconnects in VLSI devices. In the following description, numerous specific details are set forth such as specific thicknesses in order to provide a thorough understanding of the present invention. It will be obvious, however, to one skilled in the art that the present invention may be practised without these specific details. In other instances, well known processes have not been described in detail in order not unnecessarily obscure the present invention.
FIGS. 1-4 illustrative a Prior Art process for forming a single level of metalization for interconnect lines. The technology is illustrated in several figures as producing an interconnect level on a substrate 100, which may be a silicon wafer wherein the wafer carries a large number of VLSI components, interconnected by conductive lines or interconnects. As illustrated in FIG. 1, the substrate 100 has a nonplanar surface 101 which incorporates a circuit device (not shown) carried on the wafer, and onto which a layer 102 of silicon dioxide is deposited. For example, the silicon dioxide layer 102 might be deposited by using the well known process of chemical vapor deposition. The layer 102 is deposited to be slightly thicker than the desired thickness of the interconnect lines to be deposited. The layer 102 is then processed to a predetermined thickness to provide a planar top surface 105. Thereafter, a silicon nitride layer 103 is deposited on top of the silicon dioxide layer 102. Layer 103 acts as a mask for an ion implantation, which is performed in a later step.
A photoresist layer 104 is spun onto the top surface of layer 103. The photoresist layer 104 is exposed and developed using conventional techniques to define an aperture such as 106 and 107. The apertures 106 and 107 define areas of removal for layers 102 and 103 in a subsequent etching step. The photoresist layer 104 acts as a mask for the etching step, which may take place in a reactive ion etcher. The etching step is illustrated diagrammatically by the arrows 110.
After the etching step is completed and the photoresist mask layer 104 is removed as illustrated in FIG. 2, interconnect channels 120 and 122 are formed in layers 102 and 103. As illustrated, the channels 120 and 122 are formed through layer 103 and partially into layer 102. The channels 120 and 122 in layer 102 are formed to the depth desired for the thickness of the interconnect lines.
As illustrated in FIG. 3, after the photoresist layer 104 is removed, silicon atoms are implanted in the exposed surface of the silicon dioxide layer 102 and the silicon nitride layer 103. A silicon implantation layer 130 is formed in the top portion of layer 103 as well as forming a silicon implantation layer 131 in the exposed surface of layer 102 at the bottom of channels 120 and 122. The silicon ion implantation is diagrammatically illustrated by arrows 134. Typically, the implantation energy is less than 40 KeV at a dose sufficient to facilitate the seeding of a subsequent step.
After implantation of the silicon, the silicon nitride layer 103 is selectively removed with the silicon implanted layer 130.
After removal of layer 103 and the implanted silicon layer 130, a tungsten film is selectively deposited to fill the channels 120 and 122. Selective chemical vapor deposition of tungsten is generally used, since tungsten does not nucleate on unimplanted oxides. As a result it will not adhere to the top surface 105. As deposition continues, the channels 120 and 122 are filled to the level of the top surface 105, thus creating a planar surface as well as interconnect lines.
The first four steps of the present invention illustrated in FIGS. 5-8 are similar to that of the Prior Art shown in FIGS. 1-4. The substrate 200 is processed prior to the creating of the interconnect level. A thick layer of dielectric film 202 is deposited on the substrate 200. The thickness of the dielectric layer 202 is equal to the sum of the thickness of the desired intermetal dielectric layer and that of the metal film. The first dielectric film 202 can be a single layer, for example a layer of silicon dioxide, or it may consist of several different layers.
A layer 204 of masking material is deposited over the dielectric film 203 and patterned using any of the well-known deposition and patterning processes. The masking layer 204, for example a photoresist layer could either be a single layer of photoresist film or a composite layer of photoresist over another inorganic film, such as silicon nitride. The mask used in this step of the preferred embodiment is a reverse of a regular metal mask and the patterns of the metal film are removed from the masking layer.
As shown in FIG. 6, the interconnect channels 220 and 222, as designated by the mask pattern are then etched into the dielectric films 203 and 202, either by well-known dry or wet etching processes. The interconnect channels 220 and 222 are designed to allow a distance between interconnect lines 240 and 242 in the range of 2 micrometers or less.
The amount of dielectric film 202 etched is the desired thickness of the metal interconnect lines. The etching step is illustrated diagrammatically in FIG. 5 by the arrows 210. Thus, the dielectric film 202' left under the metal interconnect line has the desired intermetal dielectric thickness.
Once the channels 220 and 222 are formed, the exposed surface at the bottom of said channels 220 and 222 and the photoresist layer 204 are submitted to silicon ion implantation. The implantation step is diagrammatically illustrated by the arrows 234.
A typical implantation process uses a 40 KeV energy to a dosage sufficient to facilitate the deposition process. In the preferred embodiment, the dose of silicon ions is approximately 8�1016 /cm2. However, a higher dosage and/or a lower energy can also be employed and still be within the scope and spirit of the present invention. Furthermore, in alternative embodiments palladium, copper, gold or silver ions instead of silicon may be implanted such that the surface 231 at the bottom of said channels 220 and 222 is modified, thus promoting selective electroless metal deposition. This ion implantation, either in the preferred embodiment or in the alternative embodiments will modify the bottom surface 231 of the etched interconnect channels as shown in FIG. 7. The modification of the exposed surface 231 initiates the selective electroless metal deposition by providing a reactive catalytic surface.
The photoresist layer 204 is then removed after ion implantation, using any well-known prior art methods of photoresist removal, leaving the upper surface 205 of the wafer 10 exposed. If said photoresist layer 204 is comprised of a combination of photoresist and an inorganic layer, such as silicon nitride, both layers are simultaneously removed using any well-known prior art processes. Once the photoresist layer 204 is removed, as shown in FIG. 8, a copper or gold film is electrolessly deposited, creating metal interconnect lines 240 and 242, as shown in FIG. 9. The selective electroless deposition process will not deposit copper or gold film on the regular unmodified surface of said dielectric film 203.
Once the fabrication process has progressed to FIG. 8, the selective electroless deposition process typically proceeds in the following sequence.
______________________________________Step # Process Time______________________________________1 wetting 1 minute2 cleaning 20-60 seconds3 rinsing in water 1 minute4 activation 30 seconds5 rinsing in water 2 minutes6 deposition variable7 rinsing in water 2 minutes______________________________________
First, the wafter 10 is immersed in a deionized water bath with ultrasonic agitation to obtain better wetting of the surfaces. This step enables the air trapped in the small patterns to escape. Then a cleaning or etching step removes part of the dielectric layer and exposes the peak of silicon implant and simultaneously cleaning the surface. The composition of a typical cleaning solution in the preferred embodiment comprises deionized (DI) water and HF, in an approximate ratio of 9:1. However, the ratio of DI water to HF can range from 5:1 to 50:1. The wafer 10 is then rinsed in DI water to remove any residual acid. After the wafer 10 has been cleaned and rinsed, the modified surface 231 is activated for more efficient metal deposition. This activation step may not be necessary if the implantation dose is sufficiently high. The activation solution as described below displaces some of the silicon (Si) atoms with palladium (Pd) atoms, since Pd atoms are catalytically more reactive for copper (Cu) deposition than are Si atoms.
______________________________________Typical Activation Solution______________________________________PdCl2 0.001 mole/LiterHCl 0.004 mole/LiterAcetic acid 8.3 mole/LiterHF 0.13 mole/Liter______________________________________
After the surface 231 is activated and subsequently rinsed, the wafer 10 is immersed in a copper deposition solution. The deposition time is determined by the desired thickness of the interconnect lines and the deposition rate. An example of a deposition solution used in the preferred embodiment is described below:
______________________________________Typical Copper Deposition Solution______________________________________CuSO4 5H2 O 7 gm/LiterSodium EDTA 30 gm/LiterNaOH 10 gm/LiterKCN 0.2 mg/LiterCH2 O 10 ml/LiterGafac RE610* 3 gm/LiterNH4 F/HF 3 gm/LiterFinal pH >12.5______________________________________ *NOTE: Gafac RE610 is a surfactant used to improve surface wetting and is a trademark of Gafac Company.
Using the above-referenced deposition solution of the preferred embodiment, the rate of deposition at 70� C. is approximately 1.2 micrometers per hour. After the interconnect channels 220 and 222 are completely filled to provide a planar top surface level with the top surface 205 of the wafer 10, the wafer 10 is finally rinsed with water.
Although the preferred embodiment uses copper as a deposition film for the metal interconnect lines, an alternative deposition solution using gold (Au) may also be used. An example of a gold deposition solution used in an alternative embodiment is described below.
______________________________________Typical Composition for Gold Deposition______________________________________KAu(CN)2 5 gm/LiterKCN 13 gm/LiterKOH to adjust pHKBH4 10 gm/LiterFinal pH >13______________________________________
Although gold is somewhat more costly, it is more resistive to a corrosive environment. Furthermore, as state earlier, gold like copper has an activation energy of self diffusion in the range of 0.85-1.0 eV. Like copper, gold can be operated at considerably higher current densities than the traditional aluminum films or aluminum alloys without suffering from electromigration effects.
As a result of this present invention, metal films previously difficult to etch, for example copper, silver or gold, can be used in multi-level interconnection. The present invention provides the possibility of a fully planar surface and provides the possibility of patterning difficult-to-etch metal films. In the age of very dense VLSI devices the present invention meets the circuit requirements that are much more demanding and the process described in this invention can provide an improved alternative to the traditional interconnection processing.
Although the present invention has been described in terms of a preferred embodiment, it will be apparent that variations and modifications may be made without departing from the spirit and scope thereof, as set forth in the following claims.
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Hello. I'm not exactly sure where to start but here goes. For the most part, I'm an easy going guy who likes to have fun, talk, take pictures, see new things (travel), ask random questions, talk about Jesus, spend time with friends, meeting new people, joke around, go to concerts, cook...and more that requires getting to know me. I'm someone with a lot of heart and I enjoy living from my heart. I love to volunteer, can have fun doing work, enjoying quiet and loud times, having inside jokes with people, listening, being pushed beyond my limits... For work, I am a photographer. I have a fulltime 9-5 gig with a cool company that makes stuff for the military. Outside of work I am trying to get my photography business growing. It's all a fun job and a blessing to get to do something creative and really love. It may sound religious, but Jesus is a big part of my life, and this is something I look for in a companion as well. I'm not perfect, but I try to live with Him in the center. It's from Him where I've been learning what true love and devotion are. It's from Him in my heart... In a companion, I'm not exactly looking to get married right away but am interested in getting out there to meet people. The girl I'm looking for doesn't have to be perfect but someone who seeks Jesus, is comfortable in trying new things, and doesn't mind sharing her own mind. It's fun to have some similar things in common, but I enjoy differences and experiencing things other people enjoy.
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The Wade Ford Concert Series will present Smooth Summer Nights Saturday, July 11, at Mable House Barnes Amphitheatre. Featured artists include Joe Sommervile, Brian Simpson, Kim Waters, Peabo Bryson and Norman Brown. Gates open at 5 p.m. and the show begins at 6 p.m.
Terrace seats cost $50-$60 and lawn is $25. Tickets are available through Ticketmaster by clicking here, or in person at the amphitheatre box office. Mable House is located at 5239 Floyd Road, Mableton. For more information, visit mablehouse.org.
Families are invited to our Cobb County Safety Village to enjoy a fun-filled time of safety awareness 9 a.m.-noon, Friday, July 10. Activities will include a tour of Sparky's House, water safety games, free finger printing kits and up-close looks at emergency vehicles.
The cost will be $5 per person, with a maximum of $20 per family. Refreshments will be provided by Harry's Farmers Market. For group rates of 20 or more, call 770-852-3270. The Cobb County Safety Village is located at 1220 Al Bishop Drive, Marietta.
Mable House is hosting Food Truck Thursdays this summer and fall. The next several events will be from 5 to 8 p.m. on July 2, July 16 and July 30. Enjoy live music, arts and crafts and great food. "Moovies at the Mable" also continue Friday, July 10, with a free screening of "Rio 2." Admission and parking are free. Gates open at 7:30 p.m. and the movie begins at dusk. This is a rain or shine event. Bring your own food or purchase from concessions. Mable House Barnes Amphitheatre is located at 5239 Floyd Road, Mableton. For more information, visit mablehouse.org.