text:
MLBPA believes Selig "has not acted appropriately under the Basic Agreement" in suspending A-Rod
Aug 5, 2013, 3:47 PM EDT
Michael Weiner, head of the MLBPA, has issued a statement. Short version: we're cool with the 50-game suspensions, but the league has gone too far with A-Rod:
The accepted suspensions announced today are consistent with the punishments set forth in the Joint Drug Agreement, and were arrived at only after hours of intense negotiations between the bargaining parties, the players and their representatives.
For the player appealing, Alex Rodriguez, we agree with his decision to fight his suspension. We believe that the Commissioner has not acted appropriately under the Basic Agreement. Mr. Rodriguez knows that the Union, consistent with its history, will defend his rights vigorously.
The Union's members have made it clear that they want a clean game. They support efforts to discipline players, and harshly, to help ensure an even playing field for all. The players support the Union's efforts to uphold the JDA while at the same time guaranteeing that players receive the due process rights and confidentiality protections granted under the agreement.
Lastly, I want to close by stating our profound disappointment in the way individuals granted access to private and privileged information felt compelled to share that information publicly. The manner in which confidential information was so freely exchanged is not only a threat to the success and credibility of our jointly administered program; it calls into question the level of trust required to administer such a program. It is our view that when the bargaining parties hold their annual review of the program, we must revisit the JDA's confidentiality provisions and consider implementing stricter rules for any breach by any individual involved in the process.
Hard to disagree with any of that. Of course, given that Weiner is on record seeming to go along with MLB's view that Biogenesis suspensions do not have to conform to the JDA's discipline guidelines, it's kind of rich to hear this from him now.
- joerevs300 - Aug 5, 2013 at 6:02 PM
"The Union's members have made it clear that they want a clean game. They support efforts to discipline players, and harshly, to help ensure an even playing field for all. The players support the Union's efforts to uphold the JDA while at the same time guaranteeing that players receive the due process rights and confidentiality protections granted under the agreement."
LOL, fewer, bigger lies have ever been put into print by an MLBPA rep.
No, if you REALLY wanted a clean game, it would be a LIFETIME ban, first offense. Period.
Until then, it's "Oh, I'm sorry I got caught doing that. I'll cool my heels for 50 games, while I drive my Bugatti, live in my $1M home, and sleep on my other hundreds of thousands of dollars I have lying around".
- Kevin S. - Aug 5, 2013 at 6:42 PM
You probably think the death penalty reduces crime rates, too.
- albertmn - Aug 5, 2013 at 8:50 PM
It may or may not reduce crime, but if it were actually enforced, it would clear up some room in the nation's prison system. Giving the death penalty and then taking a decade to enforce it is ridiculous. Of course, it enforced more quickly, maybe it would affect crime rates….
- ramrene - Aug 5, 2013 at 9:17 PM
I don't know, what's the crime rate in China where they'll cane you for spitting on the street. Over there they execute the highest number of people annually yet their crime statistics are significantly lower than the US. Coincidence or cause and effect?
- jollyjoker2 - Aug 5, 2013 at 6:06 PM
we want a clean game but feel free to cheat and don't tell anyone about suspensions or disclose protected health information …….WTF.
- Walk - Aug 5, 2013 at 6:56 PM
Reading comprehension for the loss.
"we want a clean game but feel free to cheat and don't tell anyone about suspensions or disclose protected health information …….WTF."
False positives and lab mistakes do happen. Other mistakes do happen.They are extremely rare. If a players name is leaked prior to his hearing or appeal even if he is found innocent he will be punished. He can likely lose votes on any awards and he will lose money on any contract he signs. The union is not asking for nondisclosure. They are asking for the due process negotiated in good faith. They simply want a players name and information withheld until he is found guilty then it can be disseminated. How would you like to lose half your income because of a mistake even though you were proven to be innocent? By all means continue to believe whatever you wish despite the facts. Cherry picking the stats is easiest way to show bias. I believe these guys are foolish at best and scumbags at worst but they are due their duly negotiated rights. This has become a case where the cure is rivaling the disease in its stench.
- sleepyirv - Aug 5, 2013 at 6:17 PM
It's just like middle school- the weird kid who thinks he's a minotaur gets picked on because no one is willing to stand up for him.
- chc4 - Aug 5, 2013 at 6:27 PM
So here's another examples of why unions are so wonderful:
- raysfan1 - Aug 5, 2013 at 8:53 PM
…and employers never take advantage of employees either:
In other words, abuses happen both ways, because the existence of power-hungry, greedy jerks is unfortunately part of human nature. On the other hand, as a manager, I've had the privilege of working with unions in a very helpful, non adversarial way…the secret was including their leaders on the decision-making committees in a meaningful way.
- nhstateline - Aug 5, 2013 at 6:38 PM
Wait until he wins in arbitration, something I am pretty sure he will. I have no real opinion on Arod one way or the other but this strikes me as 1) mlb trying to do damage control and 2) the Yankees trying to dump a whole bunch of a bad contract. Problem for both of them is that what they agreed to with the union covers all of their players including this one. This isn't decades ago when baseball suspended Ty Cobb for a long time because it was convenient for the Commissioner and an owner.
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text:
Man sought in assault sees himself on 69 News, calls police
Published: Jun 02 2013 08:00:00 PM EDT Updated On: Jun 03 2013 06:53:00 PM EDT
A man sought in an assault at a Dunkin Donuts in Berks County has reached out to police after seeing video of himself on 69 News at Sunrise.
The shirtless man yelled at an employee from the drive-thru window Saturday afternoon, said Northern Berks Regional police.
The man then went inside, continued screaming and ripped an employee's shirt. The incident was captured on surveillance video.
The man, police said, has a different version of what happened. He's scheduled to meet with police later this week.
Copyright 2013 WFMZ. All rights reserved. This material may not be published, broadcast, rewritten or redistributed.

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Your weekend in cars
We asked @BBC_TopGear followers to tell us what they'd been up to this weekend. Here's what you came back with…
Posted: 09 Oct 2013
"I just took an epic road trip of over 1500 miles. By myself..."
Tell us what you and your car have been up to on Twitter via @BBC_TopGear


text:
New Year Package at Oxford Spires Hotel
Book by 30 November and save 15% off our published prices
Tuesday 30th December
• Arrive from 3.00pm.
• Spires afternoon tea.
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New Year's Eve
Full English breakfast served in Deacons Restaurant.
• Day at your leisure, relax in Willows Leisure Club before the festivities begin.
• Join us for a Champagne and canapé reception.
• Five course gala dinner and disco, which has all the ingredients to create the right atmosphere for
New Year's Day
A late risers' Buck's Fizz brunch will be served – just the thing to ease you into 2015.
• Spend time relaxing in Willows Leisure Club and Spa.
• Join us for a walk of historical Oxford with our official guides.
• Spires afternoon tea will be served.
• Grand dressed buffet dinner followed by dancing through the decades to our
Friday 2nd January
• Full English breakfast.
• Late check out until 12 noon.
To book call 01865 324324 or book online:
Prices for New Year Packages
|Tuesday 30th Dec - 3 nights
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*Price discounted by 15% for new bookings made by 30 November. Price displayed includes the 15% discount.


text:
The Long Reconstruction
The Post-Civil War South in History, Film, and Memory
By Frank J. Wetta, Martin A. Novelli
Routledge – 2012 – 166 pages
Routledge – 2012 – 166 pages
A century and a half after the Civil War, Americans are still dealing with the legacies of the conflict and Reconstruction, including the many myths and legends spawned by these events. The Long Reconstruction: The Post-Civil War South in History, Film, and Memory brings together history and popular culture to explore how the events of this era have been remembered.
Looking at popular cinema across the last hundred years, The Long Reconstruction uncovers central themes in the history of Reconstruction, including violence and terrorism; the experiences of African Americans and those of women and children; the Lost Cause ideology; and the economic reconstruction of the American South.
Analyzing influential films such as The Birth of a Nation and Gone with the Wind, as well as more recent efforts such as Cold Mountain and Lincoln, the authors show how the myths surrounding Reconstruction have impacted American culture.
This engaging book is essential reading for anyone interested in the history of Reconstruction, historical memory, and popular culture.
"This fascinating book provides a valuable time line of the chronological developments associated with the Civil War and Reconstruction…To demonstrate how history, memory, and meaning collude, Wetta and Novelli examine films from Birth of a Nation and Gone with the Wind to Cold Mountain and Lincoln as visual documents that participate in the mythmaking process. The audience includes, but is not limited to, those interested in history during the Reconstruction era, particularly southern history, African American history, film studies, and cultural studies. Summing Up: Recommended."
"The Long Reconstruction is a fascinating study that will force readers to think about familiar films in new ways. As they read a century of popular cinema, Wetta and Novelli make a number of persuasive claims about the often-uneasy relationship between historical memory and popular culture. This pithy and engaging book will be welcomed by cultural historians and film buffs alike."
– Coleman Hutchison, author of Apples and Ashes: Literature, Nationalism, and the Confederate States of America
"The Long Reconstruction is a very accessible account of an important and highly contested period in American history. The combination of popular culture, traditional history, and interpretative bite will make this book an eye opener for students and general readers alike. In dealing with the relationship between history and memory, Wetta and Novelli use literature, music, and movies to explore the major themes and events of the era. The result is an enlightening study that is fun to read."
– George C. Rable, author of God's Almost Chosen Peoples: A Religious History of the American Civil War
"…The Long Reconstruction: The Post-Civil War South in History, Film and Memory is useful as an introduction to Reconstruction and the Lost Cause and their representations in the fantasy world of motion pictures. As Wetta and Novelli remind us, films enjoy a long history of guiding (and misguiding) popular attributes about the legacy of the Civil War South."
-Zachary J. Lechner, North Carolina School of Science and Mathematics in The Journal of Southern History
1. "The Night They Drove Old Dixie Down": Constructing Reconstruction History
2. Lincoln "Unmurdered": Reconstruction Alternatives and Counterfactuals
3. "Let's Make a Start": Women and Reconstruction
4. "Sunshine Headin' My Way": Memories of Reconstruction in Black and White
5. Wilkes & Kennedy, Inc.: War and the Destruction of the Old Order
6. "I Am Vengeful and I Shall Not Sleep": The Civil War and the Legacy of Violence during Reconstruction
7. "A Gallant Soldier and a Christian Gentleman": The Reconciliation of North and South
8. The Princess of the Moon: The Lost Cause and the Unfinished Civil War
Frank J. Wetta is Lecturer, Department of History, and Senior Fellow, Center for History, Politics, and Policy, Kean University. He is the author of The Louisiana Scalawags: Politics, Race, and Terrorism during the Civil War and Reconstitution (2012).
Martin A. Novelli is Professor of Film, History, and Humanities at Ocean County College, New Jersey. He also teaches film history at the University of the Arts, Philadelphia.
Name: The Long Reconstruction: The Post-Civil War South in History, Film, and Memory (Paperback) – Routledge
Description: By Frank J. Wetta, Martin A. Novelli. A century and a half after the Civil War, Americans are still dealing with the legacies of the conflict and Reconstruction, including the many myths and legends spawned by these events. The Long Reconstruction: The Post-Civil War South in History, Film,...
Categories: American Southern History, American Studies, Popular Culture, Social & Cultural History


text:
January 30th, 2011 Leave a comment Go to comments
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text:
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or "mosfet," which has an insulated gate member that controls its operation. Early mosfets had aluminum gates. But because the aluminum made the mosfets unreliable and difficult to manufacture, aluminum was abandoned in favor of polysilicon. Unfortunately, polysilicon has ten-times more electrical resistance than aluminum, which not only wastes power but also slows operation of the integrated circuits. Several efforts have been made to use materials less-resistive than polysilicon, but these have failed to yield a practical solution, since some of the materials have high electrical resistance and prevent low-voltage operation. Accordingly, one embodiment of the invention provides a gate structure that includes a doped polysilicon layer to facilitate low-voltage operation, a diffusion barrier to improve reliability, and a low-resistance aluminum, gold, or silver member to reduce gate resistance. Moreover, to overcome previous manufacturing difficulties, the inventors employ a metal-substitution fabrication technique, which entails formation of a polysilicon gate, and then substitution of metal for the polysilicon.
1. An integrated-circuit assembly for making an electrode for a transistor, the assembly comprising:
a semiconductive layer;
a metal-substitutable layer adjacent the semiconductive layer;
a first metal layer contacting the metal-substitutable layer, wherein the metal-substitutable layer and the first metal layer comprise materials susceptible to cross-diffusion at certain temperatures;
a doped polysilicon layer contacting the semiconductive layer;
a diffusion barrier layer between the doped polysilicon layer and the metal-substitutable layer; and
a second metal layer contacting the first metal layer, the second metal layer including at least one of hafnium, zirconium, and titanium.
2. The assembly of
3. The integrated-circuit assembly of claim, wherein the first metal layer consists essentially of gold, silver, or aluminum.
4. The integrated-circuit assembly of
5. The integrated-circuit assembly of
6. The integrated-circuit assembly of
7. The integrated-circuit assembly of
8. The integrated-circuit assembly of
9. The integrated-circuit assembly of
10. The integrated-circuit assembly of
11. A gate structure for a field-effect transistor, comprising:
a gate insulation structure contacting a channel region of the transistor, a doped polysilicon layer contacting the gate insulation structure, the polysilicon layer
doped to define a threshold voltage for the transistor; a diffusion barrier layer adjacent the doped polysilicon layer and comprising at least one
of a silicon carbide, a silicon oxycarbide, and an amorphous silicon; and a metal layer contacting the diffusion barrier layer.
12. The gate structure of
13. The gate structure of
14. The gate structure of
15. The gate structure of
16. The gate structure of
17. The gate structure of
18. The gate structure of
19. An integrated memory circuit comprising:
a memory array having a plurality of memory cells;
an address decoder coupled to the memory cells;
a plurality of bit lines coupled to the memory cells;
a voltage-sense-amplifier circuit coupled to the bit lines; and
wherein at least one of the memory cells and the voltage-sense amplifier circuit includes a field effect transistor comprising:
a gate insulation structure contacting a channel region of the transistor;
a doped polysilicon layer contacting the gate insulation structure, the polysilicon layer doped to define a threshold voltage for the transistor;
a diffusion barrier layer adjacent the doped polysilicon layer; and
a metal layer contacting the diffusion barrier layer adn comprising at least one of gold and silver.
20. The integrated memory circuit of
21. The integrated memory circuit of
22. The integrated memory circuit of
23. The integrated memory circuit of
24. The integrated memory circuit of
25. An integrated-circuit assembly, comprising:
a plurality of field-effect transistors formed on a silicon substrate, with at least two transistors sharing a common source or drain region; and
wherein at least one transistor includes:
a gate insulation structure contacting a channel region of the one transistor;
a doped polysilicon layer contacting the gate insulation structure, the polysilicon layer doped to define a threshold voltage for the one transistor; and
a diffusion barrier layer adjacent the doped polysilicon layer; and
a metal layer contacting the diffusion barrier layer and comprising at least one of gold and silver.
26. The integrated-circuit assembly of
27. The integrated-circuit assembly of
28. The integrated-circuit assembly of
29. The integrated-circuit assembly of
30. The integrated-circuit assembly of
31. An integrated-circuit assembly for making an electrode for a transistor, the assembly comprising:
a semiconductive layer;
a metal-substitutable layer adjacent the semiconductive layer and comprising at least one of polysilicon and germanium oxide;
a first metal layer contacting the metal-substitutable layer and comprising materials susceptible to cross-diffusion at certain temperatures with one or more portions of the metal-substitutable layer;
a doped polysilicon layer contacting the semiconductive layer;
a diffusion barrier layer between the doped polysilicon layer and the metal-substitutable layer; and
a second metal layer contacting the first metal layer, the second metal layer including at least one of hafnium, zirconium, and titanium.
32. The integrated-circuit assembly of
33. The integrated-circuit assembly of
34. The integrated-circuit assembly of
35. The integrated-circuit assembly of
36. The integrated-circuit assembly of
37. A gate structure for a field-effect transistor, comprising:
a gate insulation structure contacting a channel region of the transistor;
a doped polysilicon layer contacting the gate insulation structure, the polysilicon layer doped to define a threshold voltage for the transistor;
a diffusion barrier layer adjacent the doped polysilicon layer and consisting essentially of at least one of a silicon carbide, a silicon oxycarbide, and an amorphous silicon; and
a gold layer contacting the diffusion barrier layer.
38. The gate structure of
39. A gate structure for a field-effect transistor, comprising:
a gate insulation structure contacting a channel region of the transistor;
a doped polysilicon layer contacting the gate insulation structure, the polysilicon layer doped to define a threshold voltage for the transistor;
a diffusion barrier layer adjacent the doped polysilicon layer and comprising at least one of a silicon carbide, a silicon oxycarbide, and an amorphous silicon; and
a silver layer contacting the diffusion barrier layer.
40. The gate structure of
41. A gate structure for a field-effect transistor, comprising:
a gate insulation structure contacting a channel region of the transistor;
a doped polysilicon layer contacting the gate insulation structure, the polysilicon layer doped to define a threshold voltage for the transistor;
a diffusion barrier layer adjacent the doped polysilicon layer and consisting essentially of a silicon carbide; and
a silver or gold layer contacting the diffusion barrier layer.
The present invention concerns fabrication methods and structures for integrated circuits, particularly methods and structures for field-effect transistors.
Integrated circuits, the key components in thousands of electronic and computer products, are interconnected networks of electrical components fabricated on a common foundation, or substrate. Fabricators typically use various techniques, such as layering, doping, masking, and etching, to build thousands and even millions of microscopic resistors, transistors, and other electrical components on a silicon substrate, known as a wafer. The components are then "wired," or interconnected, together to define a specific electric circuit, such as a computer memory or microprocessor.
Many integrated circuits include a common type of transistor known as a metal-oxide-semiconductor, field-effect transistor, or "mosfet" for short. A mosfet has four electrodes, or contacts—specifically, a gate, source, drain, and body—which connect to other transistors or components to form a circuit. In digital integrated circuits, such as logic circuits, memories, and microprocessors which operate with electrical signals representing ones and zeroes, each mosfet behaves primarily as a switch, with its gate serving to open and close a channel connecting its source and drain. Closing the switch requires applying a certain threshold voltage to the gate, and opening it requires either decreasing or increasing the gate voltage relative the threshold voltage, depending on whether the channel is made of negatively or positively doped semiconductive material.
One class of mosfet problems concerns the structure and composition of its gate. The gates of early mosfets were formed from a two-layer structure comprising a top aluminum layer and an underlying insulative layer, which separates and thus isolates the aluminum from its underlying semiconductive channel. This structure was a problem not only because the aluminum diffused through the underlying insulative layer and destroyed isolation between the gate and underlying channel, but also because the low-melting temperature of aluminum conflicted with high-temperature baking, or annealing, steps necessary to properly form a drain and source in alignment with the gate. Thus, for better reliability and superior drains and sources, contemporary mosfets have gates made, not from aluminum nor any other metal, but from polycrystalline silicon, sometimes called "polysilicon" or simply, "poly."
Polysilicon, which has a multi-crystalline structure instead of the single-crystalline structure of silicon wafers, can be altered through doping, a process of adding impurities, to act as a conductor, similar to aluminum but unfortunately with about ten-times more electrical resistance. This higher resistance can be ameliorated some by silicidation, a process of coating and reacting polysilicon with a salicide-forming refractory metal. But, the higher resistance of even the salicided polysilicon gates combines with inherent integrated-circuit capacitances to cause significant delays in conducting signals from one circuit point to another, ultimately limiting how fast integrated circuits operate.
In response, several efforts have been made to form gates from materials less-resistive than polysilicon or polysilicon salicides. For example, D. H. Lee and coworkers have proposed making gates from tungsten (W) and titanium nitride (TiN). (See "Gate Oxide Integrity (GOI) of MOS Transistors with W/TiN Stacked Gate," Symposium on VLSI Technology, Honolulu, pp. 208-209, 1996.) In addition, a team led by J. M. Hwang has proposed a gate consisting of stacked layers of polysilicon and titanium nitride. (See "Novel Polysilicon/TiN Stacked-Gate Structure for Fully-Depleted SOI/CMOS," Digest IEEE International Electron Devices Meeting, San Francisco, pp. 345-348, 1992.) Similarly, another group, headed by S. L. Wu, has proposed a gate structure consisting of stacked-amorphous-silicon film. (See "Suppression of the Boron Penetration Induced Si/SiO2 Interface Degradation by Using a Stacked-Amorphous-Silicon Film as the Gate Structure for Pmosfet," IEEE Electron Device Letters, vol. 15, no. 5, pp 160-162, May 1994.)
However, each of these efforts has failed to yield a practical solution. In particular, the electrical properties of the materials in these proposed gate structures, namely tungsten and titanium nitride, limit how low mosfet threshold voltages can be set, and thus pose a barrier to low-voltage operation, a necessity for increasing battery-life in portable computers, telephones, etc. Moreover, the electrical resistance of tungsten and titanium nitride is at least twice that of metals such as aluminum, gold, or silver.
Therefore, there remains a need not only for mosfets with lower-resistance gate structures, but also for suitable methods of making them.
To address these and other needs, the inventors developed low-resistance metal gate structures for field-effect transistors, and methods for making these structures. Specifically, one embodiment of the gate structure includes an aluminum, gold, or silver top layer to reduce gate resistance, a middle diffusion barrier layer to improve reliability, and a doped polysilicon bottom layer to facilitate low-voltage operation. Thus, the gate structure overcomes several drawbacks of both early metal gates and conventional polysilicon gates.
One method for making the low-resistance gate structure entails forming a gate insulation layer on a semiconductive channel region, forming a polysilicon structure on the gate insulation layer, and then substituting metal, preferably aluminum, gold, or silver, for at least a portion of the polysilicon structure to form the gate. In the preferred embodiment, the metal substitution involves depositing a metal layer on the polysilicon structure and then heating it and the polysilicon structure to urge cross-diffusion of the metal and polysilicon. In still other embodiments, the method includes implanting source and drain regions before depositing the metal layer, and thereby eliminates the temperature conflicts that prevented the use of metals, such as aluminum, with conventional source and drain self-alignment techniques.
FIG. 1 is a cross-sectional view of an integrated-circuit assembly during one stage of a fabrication process;
FIG. 2 is a cross-sectional view of the FIG. 1 integrated-circuit assembly after formation of four layers 18 a-18 d;
FIG. 3 is a cross-sectional view of the FIG. 2 assembly after forming a gate stack 20, sidewall spacers 22 a and 22 b, and drain, source, and channel regions 24 d, 24 c, and 24 s;
FIG. 4 is a cross-sectional view of the FIG. 3 assembly after removal of layer 18 d and formation of two layers 28 and 30; and
FIG. 5 is a cross-sectional view of the FIG. 4 assembly after a metal substitution reaction and planarization procedures form metal gate contact 28′;
FIG. 6 is a block diagram of a generic dynamic-random-access-memory circuit that incorporates field-effect transistors having low-resistance gate structures according to the present invention;
FIG. 7A is a cross-sectional view of an integrated-circuit assembly illustrating an RF application of the low-resistance gate structure of the present invention; and
FIG. 7B is a top view of the FIG. 7A assembly, illustrating its contact layout.
The following detailed description, which references and incorporates FIGS. 1-7B, describes and illustrates specific embodiments of the invention. These embodiments, offered not to limit but only to exemplify and teach the invention, are shown and described in sufficient detail to enable those skilled in the art to implement or practice the invention. Thus, where appropriate to avoid obscuring the invention, the description may omit certain information known to those of skill in the art.
FIGS. 1-5 show a number of preferred integrated-circuit assemblies, which taken collectively and sequentially, illustrate the preferred method of fabricating a field-effect transistor according to the present invention. FIG. 6 shows a preferred embodiment of a dynamic-random-access-memory circuit incorporating the field-effect transistor of the present invention. And, FIGS. 7A and 7B illustrate an RF (high-frequency) application of the invention, specifically an assembly of interdigitated field-effect transistors.
The method, as shown in FIG. 1, begins with a known integrated-circuit assembly or structure 10, which includes a substrate 12. The term "substrate," as used herein, encompasses a semiconductor wafer as well as structures having one or more insulative, semi-insulative, conductive, or semiconductive layers and materials. Thus, for example, the term embraces silicon-on-insulator, silicon-on-sapphire, and other advanced structures.
In addition to substrate 12, assembly 10 includes a gate insulation layer 14 and shallow-trench-isolation (STI) regions 16 a and 16 b. Gate insulation layer 14 and isolation regions 16 a and 16 b preferably consist of a silicon oxide, such as silicon dioxide. These structures are preferably formed through conventional CMOS processing.
As shown in FIG. 2, the preferred method next forms a gate subassembly 18 comprising four layers 18 a, 18 b, 18 c, and 18 d. This formation first entails growing or depositing a 50-nanometer-thick layer 18 a of doped polysilicon. For dual-work-function NMOS or PMOS devices, the polysilicon should be respectively doped with an n-type or p-type dopant to set a desired threshold voltage of the transistor under construction. The second layer is a 50-nanometer-thick, diffusion barrier layer 18 b, which consists of polycrystalline or microcrystalline silicon carbide, polycrystalline silicon oxycarbide, titanium nitride, amorphous silicon or other suitable metal-diffusion-barring material. The third layer 18 c, formed on layer 18 b, is a 500-nanometer-thick layer of polysilicon. The method then forms the fourth layer, a 100-200 nanometer-thick silicon nitride (Si3N4) gate cap layer 18 d, atop layer 18 c.
Preferably, the formation of layers 18 a, 18 b, and 18 c entails a "continuous" deposition process with temporary compositional changes to form the respective layers. In addition, layer 18 c is planarized conventionally using chemical-mechanical polishing, before formation of gate cap layer 18 d using chemical-vapor deposition.
FIG. 3 shows the results of forming gate subassembly 18 into a gate stack 20, adding sidewalls 22 a and 22 b to gate stack 20, and defining respective drain, channel, and source regions 24 d, 24 c, and 24 s. Forming subassembly 18 into gate stack 20 involves conventionally patterning the gate and then etching through all four layers of gate subassembly 18 down to gate insulation layer 14. This process entails first etching gate cap layer 18 d to form an etch mask which defines the shape and size of the gate and then etching layers 18 a, 18 b, and 18 c to conform to the etch mask. The resulting gate stack 20 includes layers 20 a-20 d, which correspond in composition and thickness to respective layers 18 a-18 d.
Subsequent to the etching, the method forms respective self-aligned drain and source regions 24 d and 24 s in substrate 12, using conventional ion-implantation techniques. Although a lightly doped drain (LDD) profile is presently preferred, any desirable profile may be chosen. Other embodiments use, for example, an abrupt junction or a "fully overlapped, lightly doped drain" (FOLD) profile. To achieve the preferred profile, the method forms insulative sidewall spacers 22 a and 22 b on opposing sidewalls of gate stack 20, before executing the ion-implantation procedure which forms drain and source regions 24 d and 24 s.
Drain and source regions are formed using conventional ion implantation and subsequent high-temperature (900-1000° C.) annealing. In conventional processing, these annealing temperatures preclude the use of aluminum and other metals having melting temperatures less than the anneal temperature. The preferred implantation doses are 1015 per square centimeter. Formation of drain and source regions 24 d and 24 s also defines the length of semiconductive channel region 24 c. Optionally, one may salicide the junctions according to conventional methods.
FIG. 4 shows the results of the next series of operations. First, the method passivates the assembly by forming an insulative fill layer 26 matching the thickness of gate stack 20. The preferred technique is thermal oxidation, oxide deposition, or a combination of the two. A planarization procedure, preferably chemical-mechanical polishing, follows to remove any passivation matter overlying gate cap 20 d. The method then uses phosphoric acid to remove gate cap 20 d, thereby exposing polysilicon layer 20 c. At this point in the process, the integrated-circuit assembly in FIG. 4 constitutes a conventional field-effect transistor with polysilicon gate contact and self-aligned source and drain regions.
After removing gate cap 20 d, the method uses evaporation, sputtering, or chemical vapor deposition to form a 1.5-micron-thick, metal layer 28 on the now-exposed polysilicon layer 18 c and surrounding portions of passivation layer 26. Although the preferred embodiment forms metal layer 28 from an aluminum alloy, which includes approximately 0.3 to 4.0 percent copper and 0.3 to 1.6 percent silicon to reduce electromigration of the aluminum at high current levels, other embodiments (described below) use gold or silver. Indeed, the inventors believe that virtually any metal that will substitutionally dissolve in polysilicon or a polysilicon germanium alloy could be used successfully.
Next as FIG. 4 shows, the method forms a 200-nanometer-thick, titanium layer 30 on metal layer 28 by evaporation, sputtering, or chemical vapor deposition. In other embodiments, layer 30 is between 20 and 250 nanometers thick and comprises zirconium or hafnium, instead of titanium. Layer 30, which is optional, reduces the temperature and time necessary to complete the next step.
The next step forces a metal-substitution reaction between metal layer 28 and polysilicon layer 20 c. To force this reaction between aluminum and polysilicon, the preferred method heats, or anneals, the integrated-circuit assembly to approximately 450° C. in a nitrogen, forming gas, or other non-oxidizing atmosphere for approximately 60 minutes. Heating urges diffusion or dissolution of metal layer 28 into polysilicon layer 20 c and polysilicon layer 20 c into the metal layer, ultimately substituting metal for most, if not all, of the polysilicon layer 20 c. The substitution process is bounded by diffusion barrier layer 20 b and spacers 22 a and 22 b.
Although here the substitution has been presented in the particularly desirable context of forming a metal gate member for a field-effect transistor, the method may be readily adapted, preferably with the provision of substitution boundary structures, to form any contact or electrode of a transistor or of another integrated-circuit component. Moreover, the substitution technique can also be applied to form a low-resistance wiring level on, for example, STI region 16 a or 16 b or any area of substrate 12. It may also be used to form aluminum plugs. See Hiroshi Horie et. al, "Novel High Aspect Ratio Aluminum Plug for Logic/DRAM LSIs Using Polysilicon-Aluminum Substitute (PAS)," (Technical Digest IEEE International Electron Devices Meeting, San Francisco, pp. 946-948, 1996) which is incorporated herein by reference.
At the conclusion of the substitution reaction, the method removes superficial polysilicon and remaining portions of layers 28 and 30 through conventional planarization. FIG. 5 shows the resulting low-resistance composite gate structure comprising a low-resistance metal gate contact 28′ atop polysilicon diffusion barrier 20 b, which itself lies atop doped polysilicon layer 20 a. In contrast to conventional gates which have a relatively high-resistance polysilicon gate contact, this preferred gate structure provides a conductive metal layer, which has a much lower electrical resistance. Estimates are that the electrical resistance of the preferred gate structure is less than half that of conventional polysilicon gates.
With completion of the composite gate structure, conventional techniques may be used to form drain and source contacts (not shown). Additionally, conventional interconnection techniques may be used to connect metal gate contact 28′ and the drain and source contacts to each other, to one or more contacts of other similar or different transistors, or to other components to make a complete integrated circuit. The preferred method ultimately concludes by heat-treating the integrated circuit for one to six hours at a temperature between 100 and 200° C. This heat treatment, which preferably occurs after packaging the integrated circuit in a protective housing, ensures that the metal gate contacts as well as other metal interconnections have minimum resistivity.
Other embodiments of the field-effect transistor and fabrication method form metal gate contact 28′ from metals other than the preferred aluminum alloy. For example, other embodiments form the gate contact from more conductive, but costlier metals, such as gold and silver. In these embodiments, layers 18 c and 20 c comprises a polycrystalline silicon-germanium alloy with 10 to 60 percent germanium. These embodiments require different annealing temperatures to effect the metal substitution reaction. In general, the annealing, or substitution, temperature should not exceed the eutectic temperature of the metallic system comprising metal layer 28 and layer 18 c. In particular, to form a gold gate contact one would form layer 28 from gold and anneal at approximately 300° C., and to form a silver gate contact one would form layer 28 from silver and anneal at approximately 500-600° C. In these embodiments, it is also preferable to use zirconium, which has a lower solubility than titanium and hafnium in silver and gold, to form optional layer 30. In the aluminum embodiment, layer 18 c may also comprise polysilicon and germanium, in which case the anneal temperature is reduced to approximately 400° C., instead of 450° C.
In addition, other embodiments omit barrier layer 20 b. In contrast to the preferred embodiment where this layer not only prevents diffusion of gate metal into gate insulation 14, but also facilitates control of the metal-substitution process. Embodiments lacking barrier layer 20 b are somewhat less reliable and more difficult to make.
FIG. 6 shows one example of the unlimited number of applications for transistors having the low-resistance gate structure of the present invention: a generic dynamic-random-access-memory (DRAM) circuit 40. DRAM circuit 40 includes a number of subcircuits, which typically comprise one or more field-effect transistors. More precisely, DRAM circuit 40 includes a memory array 42 which comprises a number of memory cells 43, a column address decoder 44, and a row address decoder 45, bit lines 46, word lines 47, and voltage-sense-amplifier circuit 48 coupled in conventional fashion to bit lines 46.
In the preferred embodiment, each of the memory cells, the address decoders, and the amplifier circuit includes one or more field-effect transistors that has the low-resistance gate structure of the present invention. However, in other embodiments, only one of the components, for example, memory array 42 or voltage-sense-amplifier circuit 48, includes field-effect transistors with the low-resistance gate structure. Circuit 40 operates according to well-known and understood principles.
The invention also has application to RF circuits, where it is critical to provide low gate resistance. For this reason, conventional RF applications use gallium-arsenide (GaAs) field-effect transistors. However, the low-resistance gate structure of the present invention makes it possible to use silicon CMOS field-effect transistors (fets), instead of GaAs fets, in RF applications, such as low-noise amplifiers, mixers, oscillators, and power amplifiers. In such applications, fets having the low-resistance gate structure of the present invention provide performance comparable to GaAs fets with the advantage of higher-density integration.
FIG. 7A and 7B show respective cross-sectional and top views of a novel portion of an integrated-circuit assembly 50 for a conventional high-frequency amplifier, mixer, oscillator, or power amplifier. (Complete circuits for these devices are well-known and thus need not be reproduced here.) Assembly 50 features substantially identical, n-channel CMOS fets 60, 70, and 80 which have interdigitated drain and source regions. More particularly, fet 60 has respective drain, channel, and source regions 61, 62, and 63 in substrate 51. Fet 60 shares source 63 with fet 70, which similarly shares drain 71 with fet 80. In successive layers atop channel region 62 lie gate insulation layer 64, doped polysilicon layer 65 a, diffusion barrier layer 65 b, and metal gate contact 66. The gate structures of fets 70 and 80 follow similarly with respective metal gate contacts 76 and 86, diffusion barrier layers 75 b and 85 b, doped polysilicon layers 75 a and 85 a, and gate insulation layers 74 and 84. The metal gate contacts are preferably formed and composed as detailed above. (Note that for clarity, structures analogous to sidewall spacers 22 a and 22 b and passivation layer 26 have been omitted from the figure.)
FIG. 7A also shows the cross-section of contacts 67, 68, 77, and 88. Drain contact 67 contacts drain region 61 of fet 60; source contact 67 contacts source region 63 of fet 60 and source region 73 of fet 70; drain contact 77 contacts drain region 71 of fet 70 and drain region 81 of fet 80; and source contact 88 contacts source region 83.
FIG. 7B presents a top view of the assembly, which details the interconnections of the metal gate contacts, the drain contacts, and the source contacts. Specifically, FIG. 7B shows that metal gate contacts 66, 76, and 86 are electrically connected to gate metal interconnect 56, to form a comb-like interconnect structure with the metal gate contacts as teeth. In addition, FIG. 7B shows that drain contacts 67 and 77 are electrically connected to each other by a metal interconnect 57, and source contacts 68 and 88 are electrically connected via a metal interconnect 58. Interconnect 57 includes a cross-over 59, preferably an air bridge, to isolate interconnect 57 from interconnect 58. Interconnects 56 and 57 and cross-over 59 are formed using conventional interconnection processes.
Embodiments of the present invention provide practical structures and fabrication methods for field-effect transistors with metal gates. One specific gate structure includes an aluminum, gold, or silver top layer to reduce gate resistance, a middle diffusion barrier layer to improve reliability, and a doped polysilicon bottom layer to facilitate low-voltage operation. One method embodiment forms source and drain regions prior to formation of the metal gate via a metal substitution technique, thereby precluding exposure to the metal-melting temperatures occurring during source and drain formation. Thus, the present invention overcomes drawbacks of early metal-gated transistors which were unreliable and difficult to manufacture, contemporary transistors which have more-resistive polysilicon gates, and recently proposed gate structures that prevent low-voltage operation.
The embodiments described above are intended only to illustrate and teach one or more ways of practicing or implementing the present invention, not to restrict its breadth or scope. The actual scope of the invention, which embraces all ways of practicing or implementing the invention, is defined only by the following claims and their equivalents.
Patent Citations
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Lenovo reported strong fourth-quarter and full-year earnings today that position it as the fastest growing PC maker among the world's top four vendors for the tenth consecutive quarter.
Strong sales of its notebook and desktop PCs, particularly in North America, were key drivers of growth.
Lenovo announced a pre-tax income of $US102 million for its fourth fiscal quarter, marking a steep 69 percent year-over-year jump from the same period last year.
Its notebook business grew 41 percent year-over-year, accounting for $4.2 billion throughout the three-month period and representing a hefty 56 percent of the company's overall sales. Lenovo's desktop business saw similar growth, with worldwide shipments up 43 percent compared to the same period last year.
Much of this growth was traced back to North America, rather than Lenovo's own home base in China, where its industry-leading 30 percent market share has already placed it ahead of its rivals.
In North America, Lenovo's PC shipments were up 26 percent, in an overall market that was flat year-over-year.
The company didn't disclose numbers around sales of its ThinkPad T430u ultrabook or its new IdeaCentre A720 all-in-one desktop. However, it did say its ThinkPad and IdeaTab tablets were selling well; overall sales shot up 17.2 percent year-over-year, making Lenovo the number two largest tablet maker in China and the number four largest world-wide.
The PC giant also said its smartphone shipments grew ten times faster than the overall market in China last quarter, in alignment with a new strategy the company has dubbed its "PC Plus era."
"With the emergence of multiple devices such as smartphones, tablets and smart TV, our industry is entering the PC Plus era," said Yang Yuanqing, Lenovo Chairman and CEO. "Lenovo is focused on leading the PC industry, and building upon that leadership in the PC+ era."
But mobile devices aren't the only products driving Lenovo into this new "era" of computing. The company announced a new initiative at its annual Accelerate Partner Summit in Las Vegas to expand its server offerings in the low-end enterprise market.
It launched its new ThinkServer RD530 and RD630 products as a first step in this direction last week.
For its full-year financial results, Lenovo reported record-breaking numbers. Sales were at an all-time high at $US29.6 billion, marking a 37 percent increase over last year, and gross income jumped 63 percent to $US582 million. With 12.9 percent global market share, Lenovo held tightly to the number-two seat in a race against HP and Dell for the title of world's biggest PC maker.
Gartner suggested HP was still the reigning champ last quarter with 16 percent.
This article originally appeared at crn.com
Copyright © 2014 The Channel Company, LLC. All rights reserved.
Issue: 339 | June 2015
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Do a little research about the choices of program that you intend to join into. Ask questions first before you join an affiliate program. Get answers because that will be the deciding point of what you will be achieving later on. Will it cost you anything to join? Most affiliate programs…Continue
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The affiliate marketing business is not that hard now with the internet at your disposable. It is much easier now compared to the days when people have to make use of the telephones and other mediums of information just to get the latest updates on the way their program is coming along. So with technology at hand, and assuming…Continue
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In tough and uncertain economic times, people are taking charge of their economic future and turning to the Internet to earn money. The Internet is filled with legitimate ways to earn from home if you know what to look for. This article provides realistic advise on how to earn from reputable online sources and run your own profitable home-based business successfully.
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Affiliate Ad Rotator is the latest joint product from Dave Nicholson and John Thornhill. It is a membership based product with a special launch price of $7.95 per month. Personally I believe this is a bargain for such a powerful tool for any affiliate marketer out there, from the most experienced right down to the very beginners. It's a beautifully simple concept that allows you to display the best selling…Continue
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In order to write a good article, you must have your research done unless you know the subject very well to begin with. The high level of competition on the net really makes it necessary to distinguish yourself (and your articles) in some meaningful way. If your articles are of poor quality, then you will find out very fast how important higher quality is to your marketing. Today, we will talk more about a few methods you can use right away to increase the quality of your…Continue
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© 2015 Created by Sup Biz Coo.


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North Bothell Little League wrapped up the No. 1 seed in the Northwest Region semifinals in style, scoring in all four innings of its victory over Laramie Little League. Washington (4-0) scored five runs in the second, three runs each in the first and fourth and two in the third to get the mercy-rule victory.
Derek Lohr led a 10-hit attack, going 3-for-4 with a two-run home run, a double and four RBIs. Lohr also scored three runs for Washington as did catcher Austin Baek. Josh Kollman and Miles Jackson each had two RBIs as well for Washington.
Wyoming (1-2) can still get into the semifinals if it defeats Oregon at 9:30 a.m. Its only run came in the bottom of the third inning, as Nathan Burnam knocked in Eli Bryant with a single.


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Blessing Okagbare of Nigeria made the 100 meter finals at the Olympics, but couldn't rally in that race and finished eighth with a time of 11.01 seconds.
Earlier in the day she overcame a slow start in the semifinals to win her heat with a personal-best time of 10.92 that put her in her first Olympics finals, but couldn't find the extra gear she showed in the semis.
Jamaica's Shelly-Ann Fraser-Pryce edged America's Carmelita Jeter for gold with a time of 10.75.
Okagbare staged a remarkable rally in the semifinals, charging from near the back of the field at the midpoint to nip America's Tianna Madison, as both were timed in 10.92. That stood as the fourth-best time in the semis. Madison finished fourth in the finals.
Okagbare will also compete in the long jump, which begins with qualifying Tuesday, and the 4x100 relay with former Miner teammate Oludamola Osayomi, which begins Aug. 10. She is the defending Olympic bronze medalist in the long jump.


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It is possible to buy almost anything over the internet these days. Unfortunately, scammers can use the anonymous nature of the internet to rip off unsuspecting shoppers.
Scammers can pretend to be selling a product—often very cheaply—just so they can steal your credit card or bank account details. Similarly, they may take your money but send you a faulty or worthless product instead—or even nothing at all.
Most online auction sites put a lot of effort into spotting scammers, which is why scammers will often try to get people to make a deal outside the auction site. They may claim that the winner of an auction that you were bidding in has pulled out, and then offer the item for sale to you. Once they have your money, you will never hear from them again and the auction site will not be able to help you.
Another common trick is for an online auction to be rigged by the scammers. If you are selling a product, the scammer can enter a low bid followed by a very high bid under another name. Just before the auction closes, the high bid will be withdrawn and the scammer's low bid will win. If you are buying a product, the scammer can arrange for 'dummy bidders' to boost the price up.
Other online shopping scams involve the sale of a product —such as a miracle cure or weight loss product—that does not live up to its claims. It can be very difficult to get your money back in these situations, especially if the other party is based overseas.
If you buy or sell online, you should also be aware of cheque overpayment scams.
As well as following these specific tips, find out how to protect yourself from all sorts of other scams.
Find out exactly who you are dealing with. If it is an Australian company you are in a much better position to sort out the problem if something goes wrong. Make sure you know the full price of the product in Australian dollars (a lot of online shopping prices are quoted in $US), including any delivery charges.
Ask yourself if the claims made about the product are reasonable or just too good to be true. Be suspicious of online shopping websites that do not give their full contact details (physical or street address as well as phone and fax numbers).
Be very careful about paying by credit card and make sure the website used for payments is secure. Look for an unbroken key or lock at the bottom of the browser window, or a web address beginning with 'https//:'
Also check to see if the website has a refund or returns policy and if so, if its policies sound fair. The better online shopping and auction sites have detailed complaint or dispute handling processes in place in case something goes wrong.
If the auction site uses a feedback rating system, check all the comments about the seller you are considering buying from.
If you have any doubts about the product in question, or the person selling it, don't go ahead with the deal. Online shopping and auction scams can cost you money and time in trying to sort out the mess.
If the offer looks genuine (and is not 'too good to be true'), and the online store or auction service is trustworthy, then you can go ahead with the purchase.
You may want to use an 'escrow' service if you are buying something at auction. This is a service that collects the payment from you, and only releases it to the trader or seller when you have confirmed that the product has arrived and is what was paid for. There is usually a small fee for this service. Only use a reputable escrow service (online auction sites may provide a list of recommended providers).
If you have bought something online and there is a problem, you should first try to contact the trader or auction service. There may be a legitimate reason for the problem. If you are not satisfied with this, and suspect that it may be a scam, you can report it through the SCAMwatch website.
If you have paid by credit card, you may be able to arrange a charge-back through your bank or credit union if there has been some sort of fraud involved. This will effectively reverse the transaction.
You should also warn your family and friends about the suspected scammer.
© Commonwealth of Australia 2015


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Hands-on Learning Flourishes at Wayne State
"Who's going to do this?" Jim Gollyhorn asked a crew of Wayne State College industrial technology students as they surrounded the partial frame of a building. A volunteer stepped forward to start on the boards.
"Measure, then cut," he instructed.
Sawdust again fluttered through the air, carrying the scent of freshly cut fir.
Gollyhorn is a first-year assistant professor of construction management at Wayne State, and his construction systems class stepped out of the Benthack Applied Science building on campus to work on a project in a Wayne resident's backyard. Gollyhorn's class is just one of many examples of the hands-on learning available at Wayne State.
Pat Quance has been a general contractor for 50 years. He and his wife Marilyn, a technical services librarian at Wayne State, have remodeled several rooms in their home, including the addition of golden birch cabinetry in their kitchen. Pat has a crew that takes on jobs locally, throughout Nebraska and even out of state. He says because of his good crews, most of the time he doesn't even have to be on the job site.
But he was present for this project. The class built the Quances a tool shop behind their garage, which Pat had planned to do himself. Pat's crew prepared the concrete foundation but, because of other jobs, was unable to devote more time to the project. Marilyn suggested recruiting a Wayne State class that previously completed a basement project for their neighbor, who is Marilyn's co-worker. Near the end of the semester and out of lab work for the class, Gollyhorn accepted the request.
"Jim said, 'We need a job to do today,' so I said, 'Get over here,'" Pat Quance recalls. "A little hands-on for them don't hurt anything."
Before starting on the frame, Quance gave the students a talk on tool safety and provided everyone with safety glasses for the project. The new shop could not be attached to the existing older garage, so the class had the challenge of building it up as a free-standing structure.
"It's good that we could build something besides a module that we have to tear down," senior James Krier said. Krier has a double major in drafting and construction management.
Gollyhorn enjoyed building a relationship with another experienced individual in the field and saw the gesture as a way for his students to get excited about helping a member of the Wayne State family and serving their community.
"That's what these kids want to do," Gollyhorn said. "Hands-on kids like less classroom."
Garret Bedke, a drafting and planning and construction management double major, is one of those students who prefers to work outdoors and has gained a lot of knowledge already in his freshman year, saying how beneficial it was to learn first-hand on the job site.
Other students participating in the project were Brandon Bruha, Ryan Cain, Dexter Dodson, Paul Dolezal, Tanner Gebers, Justin Hart, John Heath, Lee Horky, Shawn Koehler, Tucker Lancaster, Brady Marksmeier, Stuart Mohl, Corey Nolen, Blake Patterson, Jeffrey Pokorny, Justin Schoenrock and Tristan Trost.
Adding to the learning potential, Quance shared his knowledge and life stories along the way. The students also used his equipment because he's "got about every tool known to man." Since the students were so willing to get their hands dirty, Quance returned the favor by donating a construction calculator and a new laser level with a tripod, a piece of equipment the college did not have but the class members would need to use in their careers.
Before another day on the job was done, Quance picked up a level, checking that the frame was straight. "Perfect," Gollyhorn said to him with confidence. Quance nodded in agreement.
Pat Quance gives Brandon Bruha a hand with one of the boards as other students prepare to add it to the tool shed's frame.
(L to R) Corey Nolen, Shawn Koehler and Stuart Mohl measure the boards that will complete the building's frame.
The job site is an outdoor classroom for these Wayne State students. Professor Jim Gollyhorn explains a procedure to freshman Garret Bedke.
Pat Quance double checks if the frame is level as Jim Gollyhorn looks over his shoulder.
Tristan Trost and Garret Bedke inspect their work as Ryan Cain checks the frame with a level.
All hands were on deck in Pat and Marilyn Quance's backyard recently. Several Wayne State students gained hands-on experience outside the classroom as Pat, a veteran contractor, kept watch on their progress.
While his professor and classmates work on the shed frame, Dexter Dodson trims the boards with a circular saw.
Blake Patterson uses a nail gun to finish off an area of the tool shed frame.
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June 5
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July 18
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June 19, 2014
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text:
He Gives Me Grace
Our Life With Food Allergy
About Me
Sunday, June 16, 2013
Some Recent Photos
Weekends have been full of fun stuff lately. Baseball games. Our team won our local tournament. It's the first time my son has been on a team that's won a tournament so he was pretty excited.
Yesterday we watched a parade that consisted only of marching bands. Marching band was my thing in high school and so I never miss this parade if I'm around.
Then today we had a really nice afternoon and evening at my parents' house for Father's Day. The evening was capped off by a rainbow. A beautiful sight and a sure reminder of God's promises to us!
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Nicole Gepson
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User Reviews & Ratings
Total of 250 user ratings spread across 250 releases
Rapid Angel
Kaisoku Tenshi: The Rapid Angel
It would be fantastic if I knew what kind of story Rapid Angels was trying to tell, but it is still an okay game. Kinda.
Of all the years I spent gaming, there have been many firsts: playing an action game for the first time, playing a platformer for the first time, chasing a floating ghost in bondage gear down the basement of a mobile hom... Read Full Review1 of 2 users found the following review helpful
Castlevania: Lords of Shadow
While it has stunning production values, Lords of Shadow fails to provide original, intuitive, and engaging gameplay.
Castlevania is a series that has gone through very little changes over its lengthy history. Up until now, the memorable brunt of the series pitted players against cIassic horror icons (most notably Dracula) in a challeng... Read Full Review9 of 13 users found the following review helpful
Castlevania: Lords of Shadow
Resonance of Fate
Resonance of Fate
Though difficult to pick up at first, Resonance of Fate provides one of the most refreshing RPG experiences to date.
When the term "RPG" is thought of, gamers will usually associate it with big names like Final Fantasy, usually also associating the turn-based system it utilizes in most of its titles as well. However, there are entries ... Read Full Review6 of 6 users found the following review helpful
Silent Hill: Origins
While Origins is more enjoyable as a portable title, the flaws in the console version still remain.
Silent Hill has been on a long and winding road for the past years. Whether it be going in the hands of developers or having major staff changes, the people behind the series has been shifting more and more over the past... Read Full Review1 of 1 users found the following review helpful
Superman: The New Superman Adventures
To call Superman for the Nintendo 64 a piece of garbage would be an insult to garbage.
What can I honestly say about Superman for the Nintendo 64 (shorthanded as "Superman 64" for those lucky enough to not know the game well enough) that hasn't been said? Everything from the controls to the horrible graphi... Read Full Review18 of 18 users found the following review helpful
Killer 7 is one of those rare games that blends artistry with astonishingly original game play and an intricate story.
Killer 7 is, by all means, one of the finest examples of a game being developed as a creative endeavor rather than a run-of-the-mill action game. If anything, Killer 7 is the antithesis of your stereotypical action title... Read Full Review5 of 5 users found the following review helpful
Advent Rising
Advent Rising is so derivative and has so many persistent technical issues that it should simply be avoided.
Science fiction is such a diverse genre with seemingly limitless potential. The technology, interesting worlds, and awe-inspiring creativity that go into such works left me wondering where the lowest point of such a fasc... Read Full Review1 of 4 users found the following review helpful
Tales of Symphonia
Though it has a predictable story, Tales of Symphonia boasts an enjoyable combat system and wonderful multiplayer.
Role-playing games have certain rules they tend to abide by: a level-up system, a long story (preferably with good writing), and some form of combat system to make the first rule relevant. Tales of Symphonia follows the ... Read Full Review4 of 6 users found the following review helpful
Jeanne d'Arc
Jeanne d'Arc
Even though it has it's ups and downs, Jeanne d'Arc is an amazing strategy game worth picking up.
History and fantasy tend to mix together in society. Exaggerations, dubious claims, and even outright lies can make it into the history books. However, providing an alternative to what we already know opens paths for exc... Read Full Review5 of 6 users found the following review helpful
Metal Gear Solid: Peace Walker
Peace Walker contains multitudes of content and replay value never before seen in a portable title. A must-buy on PSP.
The Metal Gear series has a strange relationship with portable gaming platforms: whether its a card battle game or a cIassic-styIe iteration with nuances via RPG elements, Kojima's series has taken a few left turns on th... Read Full Review19 of 21 users found the following review helpful
Bayonetta has everything good in the 3D Beat-'Em-Up genre whilst adding interesting nuances...Though the story is dumb.
Bayonetta is a special sort of game, and the definition of the word "special" varies depending on which aspect of the game is being discussed. While the gameplay elements are "special" in a kind of enjoyable, highly addi... Read Full Review4 of 6 users found the following review helpful
Devil May Cry 4
Devil May Cry 4 provides all the elements that made the series great despite repetition and erratic difficulty.
Devil May Cry is a series that has gained a great deal of prestige throughout its lifespan. From the groundbreaking styIe of the first installment to the various nuances added in the sequels, experimentation with the ori... Read Full Review2 of 3 users found the following review helpful
Ape Quest
Ape Quest is not quite an RPG, but rather a collection of highly varied minigames with RPG elements thrown in.
The Ape Escape series has taken many left turns in its lifespan. From the original ape-nabbing formula to the Warioware-esque minigame presentation, the chronicles of the cute little monkeys have been filled with variety... Read Full Review0 of 0 users found the following review helpful
Illbleed is abound with creativity, providing an incredibly unique take on the horror genre despite some game play flaws
Horror has been done before in video games with varying results. From the passive-aggressive, puzzle-based pacing of psychological horror to the action-packed, tension-filled madness of action games, games have found mul... Read Full Review2 of 2 users found the following review helpful
F.E.A.R. 2: Project Origin
The content of FEAR 2 is far removed from the title's implication, which is the most depressing issue of all.
Video games and horror have been proved to mix quite well if done correctly, creating a highly involving experience that stays with the player throughout the course of the game and, if of high enough quality, even after ... Read Full Review2 of 6 users found the following review helpful
Galerians benefits from an interesting concept but is haunted by poor controls and a noticeable lack of direction.
Horror: A genre that has become one of the most popular in video games had some growing up to do before reaching its modern status. Although, in the beginning, horror games did not have impressive graphics until pre-rend... Read Full Review1 of 4 users found the following review helpful
Although flOw suffers from a painfully short length, the presentation is slick enough to keep you hooked until the end.
In the world of gaming there are a wealth of games which are easy to cIassify such as shooters, RPGs, and so on. However, there are select titles whichare difficult to pidgeonhole into a single genre and flOw is one of t... Read Full Review4 of 4 users found the following review helpful
Krazy Ivan
Krazy Ivan is one of the shortest, shallowest games of all time but is slightly redeemed by its cheesy brand of humor.
Video games released in the early-mid 90s usually had certain traits, mainly live-action cutscenes (FMVs) with horrible actors and graphics that blended 2-D and 3-D with varied, but usually eye-straining, results. Krazy ... Read Full Review0 of 1 users found the following review helpful
Krazy Ivan
Fallout 3
Fallout 3
Fallout 3 is one of the most engaging titles in years but is tragically bogged down by serious technical issues.
Before I begin my review, let me first state that Fallout 3 provided many hours of enjoyment for me and, in lieu of the Game of the Year Edition, I bought four of the five expansions (Operation Anchorage being the only o... Read Full Review4 of 6 users found the following review helpful
Saints Row 2
Saints Row 2 is ludicrously enjoyable, impressively varied, cheaply priced, and simply way too much fun.
The Grand Theft Auto series, particularly the third installment, has spawned a wealth of sandbox-style titles throughout the years with varying quality. While there have been a great deal of low-quality games based on th... Read Full Review2 of 2 users found the following review helpful
Saints Row 2
Tony Hawk's Proving Ground
Proving Ground rejects a wealth of tried and true ideas from previous titles, making it insufferable for longtime fans.
Before I carry on, I would like to state that Tony Hawk games have always held a special place in my heart. From the arcade-esque Pro Skater entries to Underground and American Wasteland, the Tony Hawk series has always ... Read Full Review2 of 2 users found the following review helpful
Silent Hill
Silent Hill is an excellent mix of disturbing ambience, well-placed scares, and eerie visuals despite minor flaws.
A title was overlooked in its time, Silent Hill was a prime example of psychological horror that switched between passive-agressive oppression and full-blown freak outs. Though the graphics may seem dated by today's stan... Read Full Review2 of 2 users found the following review helpful
Silent Hill
Jumping Flash! (Long Box)
Jumping Flash!
Jumping Flash! is a quirky, charming, and grossly overlooked PSone title that's worth digging up.
Jumping Flash! is a special case for the Playstation. For one, its one of the first titles to take advantage of 3D platforming while mixing in a bit of FPS action. Also, the blatant absurdity of the story is strangely co... Read Full Review0 of 0 users found the following review helpful
Silent Hill: Homecoming
Though graphically advanced, Homecoming abandons Silent Hill's psychological element in favor of cheap startle scares
Silent Hill has been a part of the video game industry for a decent amount of time now. Ever since the late 90s, Silent Hill has provided a psychological alternative to the usual action-packed horror games it shared the ... Read Full Review7 of 12 users found the following review helpful
Army of Two
Army of Two, despite a fair multiplayer run, is crippled by unlikable characters and horrid partner AI.
Budget titles are always a dodgy alley of game purchasing. Albeit there are gems to be found in almost every bargain bin, there are titles that are the video game equivalent of a long-running and generic movie series tha... Read Full Review4 of 5 users found the following review helpful


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C'mon, guys! :
C'mon, guys! :
Didn't get an email on this.....
Some people play baseball. Baseball plays Jay Bruce.
I smell hostile takeover
Go Gators!
When the stock splits.... let me know.
"panic" only comes from having real expectations
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Artist and Musician WILLIAM CLOSE & THE EARTH HARP COLLECTIVE's 'Holidays' Album Now Available
WILLIAM CLOSE has traveled all over the world, amazing audiences with his unique, one-of-a-kind and entirely innovative musical instruments. WILLIAM--who's developed over 100 new types of instruments--now brings his highly original artistic vision to a collection of holiday classics. His new full-length album HOLIDAYS is available today, Tuesday, December 4, at www.williamcloseholidays.com and at all other digital retailers soon. These unique arrangements feature an instrument designed and built by WILLIAM himself, the Earth Harp, the world's largest string instrument.
"I have always wanted to create an Earth Harp holiday album," explains WILLIAM. "The Earth Harp has such magic to its sound and concept--I feel it is a perfect instrument to help convey the peace, joy, and sacredness of the holiday season. It is used to create the mysterious symphonic depth and sparkle in these gorgeous holiday arrangements."
Developed by CLOSE in 1999, the body of the Earth Harp rests on the stage and the strings travel out over the audience attaching to the back of the theater, turning the theater, concert hall, architecture, or landscape into the instrument. The giant long strings are played with violin rosin covered gloves. The Players run their hands along the strings creating beautiful cello like tones. CLOSE named the instrument Earth Harp because the first time it was installed, the strings ran from one side of a valley 1000 feet across to the other side, turning the landscape into a giant harp. The Earth Harp strings have stretched to the top of the Seattle Space Needle, to temples in Vietnam, in the famous Grand Theater of Macau, The Coliseum in Rome, amazing architecture in Hong Kong and India, the Kennedy Center and Lincoln Center in the United States, just to name a few.
For HOLIDAYS, WILLIAM worked with Julian Schwartz and AnDrew Cohen of Art House Live along with well-respected and award-winning producers from music, film and television such as Grammy Award winner Ken Cummings (Celine Dion, Smokey Robinson, Les Paul tribute albums), Joel Douek ("The Wildest Dream," "Flying Monsters 3D," "Life") Jesper Kristensen (Wilson Phillips, Pete Anderson of Dwight Yoakam, Bryce Soderbergh of Lifehouse), acclaimed alternative rock duo The Controversy and producer/vocalist Lisbeth Scott (Shrek, Spiderman, Avatar, Iron Man).
"Over the years I have had the pleasure of performing with many gifted composers and musicians in diverse musical settings," WILLIAM shares. "I have brought together a very special group to join me on this collection of holiday classics. Film composers, vocalists and rock/pop artists join the sounds of the Earth Harp to create a spectacular album filled with peace, serenity and joy. What better an instrument to create holiday music on than the world's largest harp!"
Most recently, WILLIAM and the Earth Harp Collective--a team of extremely talented musicians, dancers, aerialists and artists--further pushed the boundaries of the performance experience when they finished third on NBC's hit talent competition "America's Got Talent." The group received massive praise and admiration from fans and all three judges. Watch here: http://youtu.be/G8rPxbuazOs and http://youtu.be/ddSUHBJHWME. From the overwhelmingly positive response on the show, WILLIAM was invited to perform an eight-week residency at The Palazzo in Las Vegas which has just been extended for another eight-weeks starting in January 2013.
WILLIAM's work explores the connection between architecture and music. Inspired by the Frank Lloyd Wright quote "architecture is frozen music," CLOSE creates musical installations that use the architecture as part of the instrument. Some of CLOSE's other instruments include, The Drum Orb, The Percussion Jacket, The Aquatar, the Wing Harp, and The Drumbrella to name a few.
Track Listing for HOLIDAYS:
1. "Carol of The Bells"
2. "Ave Maria"
3. "Little Drummer Boy"
4. "Silent Night"
5. "We Three Kings"
6. "Snowfall"
7. "Greensleeves"
8. "O Holy Night"
9. "Earth Prayer"
10. "Noche De Paz"
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Portraits of the 20th CenturyMarch 15 – June 28, 2014
Burt Glinn first became known for his spectacular color coverages of the South Seas, Japan, Russia, Mexico, and California.
Glinn was one of the original contributing editors to New York Magazine. He was a former president of the American Society of the Media Photographers. As a member of the Magnum Photographic Cooperative since the beginning of his career in 1952, he has served as president and chairman of the board.


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Track Goes on the Road to Akron
MORGANTOWN, W.Va. – After posting two top-5 program marks last weekend, the West Virginia University track and field team will head to Akron, Ohio for the two-day Akron Invitational on Feb. 1-2 at Stile Athletics Field House.
"Hopefully we have recovered from this vicious flu that has blasted the East," coach Sean Cleary says. "We are looking to get our feet back on the ground before putting the final touches on the remainder of the indoor season. Any time we run on a 300-meter track, we should be looking to familiarize ourselves for what is coming at the Big 12 Championships."
Competition is slated to begin at 4 p.m., on Friday and 9:30 a.m., on Saturday.
"For those competing as with any meet, we are looking for our best efforts," Cleary says. "Each weekend, we look to improve on our weaknesses. Practice is the arena by which we work in order to find out how good we are come race day. "
Last weekend at the PSU National Invitational, senior Heather Adams recorded a mark of 18.04 meters in the weight throw, breaking her own school record on Friday evening. Adams finished fifth in the competition and now owns four of the top five records in WVU program history in the weight throw. Junior Chene Townsend also saw action Friday night and posted a season-best time of 8.53 in the semifinals of the 60-meter hurdles for a seventh-place finish. In the finals, Townsend went on to finish in eighth place with a time of 8.69.
In the invitational heat of the distance medley relay, freshmen Kelly Williams, Christa D'Egidio, Peyton Hampson and junior Sarah Martinelli finished just behind former Big East foe Georgetown for a second-place finish with a time of 11:34.55. On Saturday, Williams was the only Mountaineer to snag a first-place finish by taking top honors in the 800-meter run, with a time of 2:11.88. Senior Sydney Cummings also had a strong performance by matching her career-best in the high jump with a leap of 1.76 meters that was good enough for a third-place finish.
Live results from the race can be found at finishtimingresults.com, while a live video stream can be viewed at mac-sports.com. Final results and a recap will be posted on WVUsports.com following the completion of the competition.
Football: KJ Dillon Preseason
Football: Tony Gibson Preseason
Football: Skyler Howard Preseason
Coach Dana Holgorsen
2015 Bob Huggins Fantasy Camp
Womens Soccer: Ashley Lawrence Goal vs. NL


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By COLLEEN MCCARTHY
Some strutted and some stumbled, but over 400 men from Starkville and Mississippi State University slipped on their best heels yesterday to march to end sexualized violence against women.
The fourth annual "Walk a Mile in Her Shoes" event is organized by the department of relationships, violence and outreach at MSU to raise awareness of sexual violence.
"Sexual assault is not just a woman's issue; it is a societal issue. Men are a part of that equation to eliminate sexual violence," counseling psychologist Beatrice Tatem, who organized the event, said. "Most men don't commit sexual violence, but we're challenging those who do not do it to check the men that do."
The men were challenged to walk a mile, or four laps around the Junction on the MSU campus, all while wearing high heeled shoes. Though the event might not sound appealing to most men, "Walk a Mile" had a record turnout. So many men registered this year that event organizers ran out of high heels, but that didn't stop men from participating in the event.
Tatem credited the record numbers to the increased participation from the campus fraternities. Every fraternity was represented during the walk.
"We have a stereotype that all fraternity men are into the parties — that negative stereotype — but that's not true," John Thompson, a graduate assistant for fraternity and sorority life, said. "We wanted to show our campus and our community that we stand for more than that."
Though some men struggled with their new footwear, the message was worth the pain.
"We wanted to get involved because I think everyone has a mother or a sister who we care so much for; we would hate for them to be one of the people we're out here walking for," Phi Beta Sigma Kevian Conley said. "We want these ladies to know that we may not understand what you go through, but for a day we can take some time and try to understand."
The fraternities weren't the only ones to participate. Starkville firefighters, Mayor Parker Wiseman and Verizon Wireless volunteers all came to the event.
"Anything that we can do to draw awareness to sexual assault or domestic violence is great, and I think some firemen wearing some high heeled shoes is going to draw attention," Firefighter Brian Arnett said.
In addition to the record turnout of men, many women came out to support the event.
Tatem said the event's success sent a message.
"I'm speechless; I'm touched; I'm motivated to continue to do work that often times can be seen as controversial," she said. "I'm touched by the spirit of these students who came out in large numbers. I could just cry."